WorldWideScience

Sample records for beam assisted deposition

  1. Lifetime obtained by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chakaroun, M. [XLIM-MINACOM-UMR 6172, Faculte des Sciences et Techniques, 123 av. Albert Thomas, 87060 Limoges cedex (France); Antony, R. [XLIM-MINACOM-UMR 6172, Faculte des Sciences et Techniques, 123 av. Albert Thomas, 87060 Limoges cedex (France)], E-mail: remi.antony@unilim.fr; Taillepierre, P.; Moliton, A. [XLIM-MINACOM-UMR 6172, Faculte des Sciences et Techniques, 123 av. Albert Thomas, 87060 Limoges cedex (France)

    2007-09-15

    We have fabricated green organic light-emitting diodes based on tris-(8-hydroxyquinoline)aluminium (Alq3) thin films. In order to favor the charge carriers transport from the anode, we have deposited a N,N'-diphenyl-N,N'-bis (3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) layer (hole transport layer) on a ITO anode. Cathode is obtained with a calcium layer covered with a silver layer. This silver layer is used to protect the other layers against oxygen during the OLED use. All the depositions are performed under vacuum and the devices are not exposed to air during their realisation. In order to improve the silver layer characteristics, we have realized this layer with the ion beam assisted deposition process. The aim of this process is to densify the layer and then reduce the permeation of H{sub 2}O and O{sub 2}. We have used argon ions to assist the silver deposition. All the OLEDs optoelectronic characterizations (I = f(V), L = f(V)) are performed in the ambient air. We compare the results obtained with the assisted layer with those obtained with a classical cathode realized by thermal unassisted evaporation. We have realized lifetime measurements in the ambient air and we discuss about the assisted layer influence on the OLEDs performances.

  2. Hemocompatibility of DLC coatings synthesized by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Ion beam-assisted diamond-like carbon (DLC) coatings have beenused for growing the human platelet, fibrinogen, and albumin in the control environment in order to assess their hemocompatibility. The hard carbon films were prepared on polymethylmethacrylate (PMMA) at room temperature using ion beam assisted deposition (IBAD). Raman spectroscopic analysis proved that the carbon films on PMMA are diamond-like with a higher fraction of sp\\+3 bonds in the structure of mixed sp\\+2+sp\\+3 bonding. The blood protein adsorption tests showed that DLC coatings can adsorb more albumin and are slightly more fibrinogen than the PMMA chosen as a control sample. The platelets adhered on DLC coatings were reduced significantly in number. These results indicate good hemocompatibility of DLC coatings.

  3. Hardness and stress of amorphous carbon film deposited by glow discharge and ion beam assisting deposition

    CERN Document Server

    Marques, F C

    2000-01-01

    The hardness and stress of amorphous carbon films prepared by glow discharge and by ion beam assisting deposition are investigated. Relatively hard and almost stress free amorphous carbon films were deposited by the glow discharge technique. On the other hand, by using the ion beam assisting deposition, hard films were also obtained with a stress of the same order of those found in tetrahedral amorphous carbon films. A structural analysis indicates that all films are composed of a sp sup 2 -rich network. These results contradict the currently accepted concept that both stress and hardness are only related to the concentration of sp sup 3 sites. Furthermore, the same results also indicate that the sp sup 2 sites may also contribute to the hardness of the films.

  4. Tribological Properties of DLC Film Prepared by C + Ion Beam-assisted Deposition (IBAD)

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    C + ion beam-assisted deposition was utilized to prepare deposit diamond-like carbon (DLC) film.With the help of a series of experiments such as Raman spectroscopy, FT- IR spectroscopy, AFM and nanoindentation, the DLC film has been recognized as hydrogenated DLC film and its tribological properties have been evaluated.The ball-on-disc testing results show that the hardness and the tribological properties of the DLC film produced by C + ion beam-assisted deposition are improved significandy.DLC film produced by C+ ion beam-assisted deposition is positive to have a prosperous tribological application in the near future.

  5. Ion Beam Assisted Deposition Of Optical Thin Films - Recent Results

    Science.gov (United States)

    McNally, J. J.; Al-Jumaily, G. A.; Wilson, S. R.; McNeil, J. R.

    1985-11-01

    We have examined the properties of dielectric (Ti02, Si02, -Al203, Ta205 and Hf02) films deposited using ion-assisted deposition (IAD). The films were characterized using an angularly resolved scatterometer, spectrophotometer and Raman spectroscopy. A reduction in optical scatter, especially that due to low spatial frequencies, is observed for films deposited with simultaneous ion bombardment. Higher values of refractive index are obtained for films deposited using IAD. Raman spectra indicate a crystalline phase change in TiO2 films is induced by bombardment of samples with 02 ions during deposition. Other experimental data and the effects of the induced phase transition on the optical properties of TiO2 will be discussed.

  6. Study of indium tin oxide thin films deposited on acrylics substrates by Ion beam assisted deposition technique

    OpenAIRE

    Meng Lijian; Liang Erjun; Gao Jinsong; Teixeira, Vasco M. P.; Santos, M. P. dos

    2009-01-01

    Indium tin oxide (ITO) thin films have been deposited onto acrylics (PMMA) substrates by ion beam assisted deposition technique at different oxygen flows. The structural, optical and electrical properties of the deposited films have been characterized by X-ray diffraction, transmittance, FTIR, ellipometry and Hall effect measurements. The optical constants of the deposited films have been calculated by fitting the ellipsometric spectra. The effects of the oxygen flow on the properties of the ...

  7. Ion assistance effects on electron beam deposited MgF sub 2 films

    CERN Document Server

    Alvisi, M; Della Patria, A; Di Giulio, M; Masetti, E; Perrone, M R; Protopapa, M L; Tepore, A

    2002-01-01

    Thin films of MgF sub 2 have been deposited by the ion-assisted electron-beam evaporation technique in order to find out the ion beam parameters leading to films of high laser damage threshold whose optical properties are stable under uncontrolled atmosphere conditions. It has been found that the ion-assisted electron-beam evaporation technique allows getting films with optical properties (refraction index and extinction coefficient) of high environmental stability by properly choosing the ion-source voltage and current. But, the laser damage fluence at 308 nm was quite dependent on the assisting ion beam parameters. Larger laser damage fluences have been found for the films deposited by using assisting ion beams delivered at lower anode voltage and current values. It has also been found that the films deposited without ion assistance were characterized by the highest laser damage fluence (5.9 J/cm sup 2) and the lowest environmental stability. The scanning electron microscopy analysis of the irradiated areas...

  8. Biaxially textured Ag films by grazing ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Foerster, Daniel F., E-mail: foerster@ph2.uni-koeln.d [II. Physikalisches Institut, Universitaet zu Koeln, 50937 Koeln (Germany); Bleikamp, Sebastian; Michely, Thomas [II. Physikalisches Institut, Universitaet zu Koeln, 50937 Koeln (Germany)

    2010-11-01

    The effect of grazing incidence 4 keV Ar{sup +} ion irradiation on the early stage of Ag thin film growth on amorphous Si was investigated. The double effect of axial and surface channeling resulted in grains oriented along the <110> axis in-plane, while the (111) out-of-plane texture was maintained. A slight average tilt of the (111) out-of-plane texture axis towards the ion beam direction is proposed to result from the difference between terrace and step edge sputtering yield. The observed tilt is consistent with a minimum erosion orientation of the surface profile.

  9. Ion beam assisted deposition of organic molecules: a physical way to realize OLED structures

    Science.gov (United States)

    Moliton, André; Antony, Rémi; Troadec, David; Ratier, Bernard

    2000-05-01

    We demonstrate how the quantum efficiency of an organic light-emitting diode can be improved by a physical way based on the ion beam assisted deposition: the recombination current can be increased by an enhancement of the minority carrier injection while the total current can be decreased by generation of electron traps which reduced the majority current. The quantum efficiency of fluorescence can be also improved by a layer densification with a limitation of the nonradiative centers. As a result, the quantum efficiency of the structure ITO/Helium assisted Alq3/unassisted Alq3/Ca/Al is improved (by around a factor 10) in relation with a virgin structure.

  10. Microanalyses of the hydroxyl—poly—calcium sodium phosphate coatings produced by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    LIUZhong-Yang; WANGChang-Xing; 等

    2002-01-01

    Thin calcium phosphate catings on titanium alloy substrates were prepared by Ar+ ion beam assisted deposition(IBAD) from hydroxyl-poly-calcium sodium phosphate(HPPA) target.The coatings were analyzed by XRD,FTIR,XPS,These analyses revealed that the as-deposited films were amorphous or no apparent crystallinity.No distinct absorption band of the hydroxyl group was observed in FTIR spectra of the coatings but new absorption bands were presented for CO3-2,The calcium to phosphorous ratio of these catings in different IBAD conditions varied from 0.46 to 3.36.

  11. Microanalyses of the hydroxyl-poly-calcium sodium phosphate coatings produced by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Thin calcium phosphate coatings on titanium alloy substrates wereprepared by Ar+ ion beam assisted deposition (IBAD) from hydroxyl-poly-calciumsodium phosphate (HPPA) target. The coatings were analyzed by XRD, FTIR, XPS.These analyses revealed that the as-deposited films were amorphous or no apparentcrystallinity. No distinct absorption band of the hydroxyl group was observed in FTIRspectra of the coatings but new absorption bands were presented for CO3-2. Thecalcium to phosphorous ratio of these coatings in different IBAD conditions variedfrom 0.46 to 3.36.

  12. Corrosion properties of aluminium coatings deposited on sintered NdFeB by ion-beam-assisted deposition

    Science.gov (United States)

    Mao, Shoudong; Yang, Hengxiu; Li, Jinlong; Huang, Feng; Song, Zhenlun

    2011-04-01

    Pure Al coatings were deposited by direct current (DC) magnetron sputtering to protect sintered NdFeB magnets. The effects of Ar+ ion-beam-assisted deposition (IBAD) on the structure and the corrosion behaviour of Al coatings were investigated. The Al coating prepared by DC magnetron sputtering with IBAD (IBAD-Al-coating) had fewer voids than the coating without IBAD (Al-coating). The corrosion behaviour of the Al-coated NdFeB specimens was investigated by potentiodynamic polarisation, a neutral salt spray (NSS) test, and electrochemical impedance spectroscopy (EIS). The pitting corrosion of the Al coatings always began at the voids of the grain boundaries. Bombardment by the Ar+ ion-beams effectively improved the corrosion resistance of the IBAD-Al-coating.

  13. Optimization of Energy Scope for Titanium Nitride Films Grown by Ion Beam-Assisted Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Wei; MA Zhong-Quan; WANG Ye; WANG De-Ming

    2006-01-01

    The deposited energy during film growth with ion bombardment, correlated to the atomic displacement on the surface monolayer and the underlying bulk, has been calculated by a simplified ion-solid interaction model under binary collision approximation. The separated damage energies caused by Ar ion, different for the surface and the bulk, have been determined under the standard collision cross section and a well-defined surface and bulk atom displacement threshold energy of titanium nitride (TiN). The optimum energy scope shows that the incident energy of Ar+ around 110eV for TiN (111) and 80eV for TiN (200) effectively enhances the mobility of adatom on surface but excludes the damage in underlying bulk. The theoretical prediction and the experimental result are in good agreement in low energy ion beam-assisted deposition.

  14. Tilting of carbon encapsulated metallic nanocolumns in carbon-nickel nanocomposite films by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Krause, Matthias [Helmholtz-Zentrum Dresden-Rossendorf, PF-510119, 01314 Dresden (Germany); Technische Universitaet Dresden, D-01062 Dresden (Germany); Muecklich, Arndt; Zschornak, Matthias; Wintz, Sebastian; Gemming, Sibylle; Abrasonis, Gintautas [Helmholtz-Zentrum Dresden-Rossendorf, PF-510119, 01314 Dresden (Germany); Oates, Thomas W. H. [Leibniz-Institut fuer Analytische Wissenschaft, ISAS e.V., Albert-Einstein-Str. 9, 12489 Berlin (Germany); Luis Endrino, Jose [Surfaces and Coatings Department, Instituto de Ciencia de Materiales de Madrid, c/Sor Juana Ines de la Cruz 3, Cantoblanco, 28049 Madrid (Spain); Baehtz, Carsten; Shalimov, Artem [Helmholtz-Zentrum Dresden-Rossendorf, PF-510119, 01314 Dresden (Germany); Rossendorf Beamline, European Synchrotron Radiation Facility, F-38043 Grenoble (France)

    2012-07-30

    The influence of assisting low-energy ({approx}50-100 eV) ion irradiation effects on the morphology of C:Ni ({approx}15 at. %) nanocomposite films during ion beam assisted deposition (IBAD) is investigated. It is shown that IBAD promotes the columnar growth of carbon encapsulated metallic nanoparticles. The momentum transfer from assisting ions results in tilting of the columns in relation to the growing film surface. Complex secondary structures are obtained, in which a significant part of the columns grows under local epitaxy via the junction of sequentially deposited thin film fractions. The influence of such anisotropic film morphology on the optical properties is highlighted.

  15. Mechanical Properties and Thermal Stability of TiN/Ta Multilayer Film Deposited by Ion Beam Assisted Deposition

    Directory of Open Access Journals (Sweden)

    Hongfei Shang

    2014-01-01

    Full Text Available TiN/Ta multilayer film with a modulation period of 5.6 nm and modulation ratio of 1 : 1 was produced by ion beam assisted deposition. Microstructure of the as-deposited TiN/Ta multilayer film was observed by transmission electron microscopy and mechanical properties were investigated. Residual stress in the TiN/Ta multilayer film was about 72% of that of a TiN monolayer film with equivalent thickness deposited under the same conditions. Partial residual stress was released in the Ta sublayers during deposition, which led to the decrease of the residual stress of the TiN/Ta multilayer film. Nanohardness (H of the TiN/Ta multilayer film was 24 GPa, 14% higher than that of the TiN monolayer film. It is suggested that the increase of the nanohardness is due to the introduction of the Ta layers which restrained the growth of TiN crystal and led to the decrease of the grain size. A significant increase (3.5 times of the H3/E2 (E elastic modulus value indicated that the TiN/Ta multilayer film has higher elasticity than the TiN monolayer film. The Lc (critical load in nano-scratch test value of the TiN monolayer film was 45 mN, which was far lower than that of the TiN/Ta multilayer film (around 75 mN. Results of the indentation test showed a higher fracture toughness of the TiN/Ta multilayer film than that of the TiN monolayer film. Results of differential scanning calorimetric (DSC and thermo gravimetric analysis (TGA indicate that the TiN/Ta multilayer film has better thermal stability than the TiN monolayer film.

  16. Structural and magnetic studies of thin Fe57 films formed by ion beam assisted deposition

    Science.gov (United States)

    Lyadov, N. M.; Bazarov, V. V.; Vagizov, F. G.; Vakhitov, I. R.; Dulov, E. N.; Kashapov, R. N.; Noskov, A. I.; Khaibullin, R. I.; Shustov, V. A.; Faizrakhmanov, I. A.

    2016-08-01

    Thin Fe57 films with the thickness of 120 nm have been prepared on glass substrates by using the ion-beam-assisted deposition technique. X-ray diffraction, electron microdiffraction and Mössbauer spectroscopy studies have shown that as-deposited films are in a stressful nanostructured state containing the nanoscaled inclusions of α-phase iron with the size of ∼10 nm. Room temperature in-plane and out-of-plane magnetization measurements confirmed the presence of the magnetic α-phase in the iron film and indicated the strong effect of residual stresses on magnetic properties of the film as well. Subsequent thermal annealing of iron films in vacuum at the temperature of 450 °C stimulates the growth of α-phase Fe crystallites with the size of up to 20 nm. However, electron microdiffraction and Mössbauer spectroscopic data have shown the partial oxidation and carbonization of the iron film during annealing. The stress disappeared after annealing of the film. The magnetic behaviour of the annealed samples was characterized by the magnetic hysteresis loop with the coercive field of ∼10 mT and the saturation magnetization decreased slightly in comparison with the α-phase Fe magnetization due to small oxidation of the film.

  17. Ion beams application to modification of surface layer of solids with particular regard to IBAD method - ion beam assisted deposition realized in the INP; Zastosowanie wiazek jonowych do modyfikowania warstwy wierzchniej cial stalych, ze szczegolnym uwzglednieniem metody IBAD - Ion Beam Assisted Deposition, realizowanej w IFJ

    Energy Technology Data Exchange (ETDEWEB)

    Drwiega, M.; Lipinska, E.

    1992-12-31

    The different trends in ion engineering such as: dynamic ion mixing, ionized cluster beam deposition and ion beam assisted deposition are described. Some examples of properties of surface coatings are given and their applications are presented. The future of ion engineering is described. 48 refs, 12 figs, 4 tabs.

  18. Application of Taguchi Method to the Optimization of a-C:H Coatings Deposited Using Ion Beam Assisted Physical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    W. H. Kao

    2015-02-01

    Full Text Available The Taguchi design method is used to optimize the adhesion, hardness, and wear resistance properties of a-C:H coatings deposited on AISI M2 steel substrates using the ion beam assisted physical vapor deposition method. The adhesion strength of the coatings is evaluated by means of scratch tests, while the hardness is measured using a nanoindentation tester. Finally, the wear resistance is evaluated by performing cyclic ball-on-disc wear tests. The Taguchi experimental results show that the optimal deposition parameters are as follows: a substrate bias voltage of 90 V, an ion beam voltage of 1 kV, an acetylene flow rate of 21 sccm, and a working distance of 7 cm. Given these optimal processing conditions, the a-C:H coating has a critical load of 99.8 N, a hardness of 25.5 GPa, and a wear rate of 0.4 × 10−6 mm3/Nm.

  19. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krumov, E., E-mail: emodk@clf.bas.bg [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Starbov, N.; Starbova, K. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Perea, A.; Solis, J. [Instituto de Optica ' Daza de Valdes' , CSIC, 28006 Madrid (Spain)

    2009-11-15

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO{sub 2} ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO{sub 2} films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO{sub 2} based thin film catalysts is discussed.

  20. Fabrication of single TiO2 nanotube devices with Pt interconnections using electron- and ion-beam-assisted deposition

    Science.gov (United States)

    Lee, Mingun; Cha, Dongkyu; Huang, Jie; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    Device fabrication using nanostructured materials, such as nanotubes, requires appropriate metal interconnections between nanotubes and electrical probing pads. Here, electron-beam-assisted deposition (EBAD) and ion-beam-assisted deposition (IBAD) techniques for fabrication of Pt interconnections for single TiO2 nanotube devices are investigated. IBAD conditions were optimized to reduce the leakage current as a result of Pt spreading. The resistivity of the IBAD-Pt was about three orders of magnitude less than that of the EBAD-Pt, due to low carbon concentration and Ga doping, as indicated by X-ray photoelectron spectroscopy analysis. The total resistances of single TiO2 nanotube devices with EBAD- or IBAD-Pt interconnections were 3.82 × 1010 and 4.76 × 108 Ω, respectively. When the resistivity of a single nanotube is low, the high series resistance of EBAD-Pt cannot be ignored. IBAD is a suitable method for nanotechnology applications, such as photocatalysis and biosensors.

  1. AMORPHIZATION IN Nb-M (M=Fe, Co, Ni) BINARY METAL SYSTEMS INDUCED BY ION BEAM ASSISTED DEPOSITION (IBAD)

    Institute of Scientific and Technical Information of China (English)

    F. Pan; F. Zeng; B. Zhao

    2002-01-01

    Ion beam assisted deposition technique (IBAD) was utilized to systematically studyamorphization in binary metal systems of Nb-magnetic element, i.e., Nb-M (M=Fe,Co or Ni). The glass forming range terned as Nb fraction of Nb-Fe system was about34at.% to 56at.%, that of Nb-Co system was about 32at.% to 72at.% and that of Nb-Ni about 20at.% to 80at.%. Similar percolation patterns were found in amorphousalloy films. The fractal dimensions of the percolation patterns approach to 2, whichindicates 2-D layer growth for amorphous phases. It is regarded that the assistedAr+ ion beam duringthe deposition process plays important role for the 2-D layergrowth. Some metastable crystalline phases were obtained in these three systems byIBAD, e.g., bcc supersaturated solid solutions in Nb-Fe and Nb-Co systems, fcc andhcp phases in Nb-Co and Nb-Ni systems. The formation and competing between theamorphous and the metastable crystalline phases were determined by both the phases'thermodynamic states in binary metal systems and kinetics during IBAD process.

  2. Microstructure and photoluminescence of Er-doped SiOx films synthesized by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    Duan Shu-Qing; Tan Na; Zhang Qing-Yu

    2005-01-01

    Er-doped Sio_ films were synthesized at 500℃ by ion beam assisted deposition technique and annealed at 800 and 1100℃ for 2h in the air atomosphere. The analysis by using energy dispersive x-ray spectroscopy showed that the ratio of Si to O decreased from 3 in the as-deposited films to about 1 in the annealed films. The investigation by using transmission electron microscopy and x-ray diffraction inducated that annealing induces a microstructure change from amorphous to crystlline. The grain sizes in the films were about 10 and 40nm when annealed at 800 and 1100℃, respectively. The films annealed at temperatures of 800 and 1100℃ exhibited a sharp photoluminescence (PL) at 1.533μm from the Er centres when pumped by 980nm laser. The influence of microstructure and grain size on the PL from Er-doped Sio_ films has been studies and discussed.

  3. Ion-Beam-Assisted Deposition of MoS2 and Other Low-Friction Films

    Science.gov (United States)

    2007-11-02

    the ion beam. Immersed in the beam is a heated tungsten filament which emits electrons to neutralize the positive charge of the beam. The sources...inadequate, indicating a temperature far below actual, and was replaced by a fine-gauge thermocouple inserted into a bronze shoe riding in contact with the...filaments lasted only about an hour when the source was operated at high power due to erosion of the tungsten wire. New filaments draw about 6 A at high beam

  4. CORROSION BEHAVIOR OF Cu-Nb AND Ni-Nb AMORPHOUS FILMS PREPARED BY ION BEAM ASSISTED DEPOSITION

    Institute of Scientific and Technical Information of China (English)

    B. Zhao; F. Zeng; D.M. Li; F. Pan

    2003-01-01

    The Cu25Nb75 and Ni45Nb55 amorphous films with about 500nm thickness were prepared by ion beam assisted deposition (IBAD). Potentiodynamic polarization measurement was adopted to investigate the corrosion resistance of samples and the tests were carried out respectively in 1mol/L H2SO4 and NaOH aquatic solution. The corrosion performance of the amorphous films was compared with that of multilayered and pure Nb films. Experimental results indicated that the corrosion resistance of amorphous films was better than that of the corresponding multilayers and pure Nb films for both Ni-Nb system with negative heat of formation and Cu-Nb system with positive heat of formation.

  5. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

    Science.gov (United States)

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-06-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator.

  6. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Science.gov (United States)

    Youroukov, S.; Kitova, S.; Danev, G.

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

  7. Protective Sliding Carbon-Based Nanolayers Prepared by Argon or Nitrogen Ion-Beam Assisted Deposition on Ti6Al4V Alloy

    Directory of Open Access Journals (Sweden)

    Petr Vlcak

    2016-01-01

    Full Text Available The microstructure and the surface properties of samples coated by carbon-based nanolayer were investigated in an effort to increase the surface hardness and reduce the coefficient of friction of the Ti6Al4V alloy. Protective carbon-based nanolayers were fabricated by argon or nitrogen ion-beam assisted deposition at ion energy of 700 eV on Ti6Al4V substrates. The Raman spectra indicated that nanolayers had a diamond-like carbon character with sp2 rich bonds. The TiC and TiN compounds formed in the surface area were detected by X-ray diffraction. Nanoscratch tests showed increased adhesion of a carbon-based nanolayer deposited with ion assistance in comparison with a carbon nanolayer deposited without ion assistance. The results showed that argon ion assistance leads to greater nanohardness than a sample coated by a carbon-based nanolayer with nitrogen ion assistance. A more than twofold increase in nanohardness and a more than fivefold decrease in the coefficient of friction were obtained for samples coated by a carbon-based nanolayer with ion assistance, in comparison with the reference sample.

  8. Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation

    Directory of Open Access Journals (Sweden)

    Chin-Chiuan Kuo

    2010-01-01

    Full Text Available Indium molybdenum oxide (IMO films were deposited onto the polyethersulfone (PES substrates by ion-beam-assisted evaporation (IBAE deposition at low temperature in this study. The effects of film thickness on their optical and electrical properties were investigated. The results show that the deposited IMO films exhibit a preferred orientation of B(222. The electrical resistivity of the deposited film initially reduces then subsequently increases with film thickness. The IMO film with the lowest resistivity of 7.61 × 10−4 ohm-cm has been achieved when the film thickness is 120 nm. It exhibits a satisfactory surface roughness pv of 8.75 nm and an average visible transmittance of 78.7%.

  9. The Effect of Annealing on the Structural and Optical Properties of Titanium Dioxide Films Deposited by Electron Beam Assisted PVD

    Directory of Open Access Journals (Sweden)

    Yaser M. Abdulraheem

    2013-01-01

    Full Text Available Titanium dioxide thin films were deposited on crystalline silicon substrates by electron beam physical vapor deposition. The deposition was performed under vacuum ranging from 10−5 to 10−6 Torr without process gases, resulting in homogeneous TiO2-x layers with a thickness of around 100 nm. Samples were then annealed at high temperatures ranging from 500°C to 800°C for 4 hours under nitrogen, and their structural and optical properties along with their chemical structure were characterized before and after annealing. The chemical and structural characterization revealed a substoichiometric TiO2-x film with oxygen vacancies, voids, and an interface oxide layer. It was found from X-ray diffraction that the deposited films were amorphous and crystallization to anatase phase occurred for annealed samples and was more pronounced for annealing temperatures above 700°C. The refractive index obtained through spectroscopic ellipsometry ranged between 2.09 and 2.37 in the wavelength range, 900 nm to 400 nm for the as-deposited sample, and jumped to the range between 2.23 and 2.65 for samples annealed at 800°C. The minimum surface reflectance changed from around 0.6% for the as-deposited samples to 2.5% for the samples annealed at 800°C.

  10. A combined molecular dynamics and kinetic Monte Carlo calculation to study sputter erosion and beam assisted deposition

    CERN Document Server

    Betz, G

    2002-01-01

    To extend the time scale in molecular dynamics (MD) calculations of sputtering and ion assisted deposition we have coupled our MD calculations to a kinetic Monte Carlo (KMC) calculation. In this way we have studied surface erosion of Cu(1 0 0) under 200-600 eV Cu ion bombardment and growth of Cu on Cu(1 0 0) for deposition at thermal energies up to energies of 100 eV per atom. Target temperatures were varied from 100 to 400 K. The coupling of the MD calculation to a KMC calculation allows us to extend our calculations from a few ps, a time scale typical for MD, to times of up to seconds until the next Cu particle will impinge/be deposited on the crystal surface of about 100 nm sup 2 in size. The latter value of 1 s is quite realistic for a typical experimental sputter erosion or deposition experiment. In such a calculation thermal diffusion processes at the surface and annealing of the surface after energetic ion bombardment can be taken into account. To achieve homo-epitaxial growth of a film the results cle...

  11. Improvement and characterization of high-reflective and anti-reflective nanostructured mirrors by ion beam assisted deposition for 944 nm high power diode laser

    Science.gov (United States)

    Ghadimi-Mahani, A.; Farsad, E.; Goodarzi, A.; Tahamtan, S.; Abbasi, S. P.; Zabihi, M. S.

    2015-11-01

    Single-layer and multi-layer coatings were applied on the surface of diode laser facets as mirrors. This thin film mirrors were designed, deposited, optimized and characterized. The effects of mirrors on facet passivation and optical properties of InGaAs/AlGaAs/GaAs diode lasers were investigated. High-Reflective (HR) and Anti-Reflective (AR) mirrors comprising of four double-layers of Al2O3/Si and a single layer of Al2O3, respectively, were designed and optimized by Macleod software for 944 nm diode lasers. Optimization of Argon flow rate was studied through Alumina thin film deposition by Ion Beam Assisted Deposition (IBAD) for mirror improvement. The nanostructured HR and AR mirrors were deposited on the front and back facet of the laser respectively, by IBAD system under optimum condition. Atomic Force Microscope (AFM), Vis-IR Spectrophotometer, Field Emission Scanning Electron Microscopy (FESEM) and laser characterization Test (P-I) were used to characterize various properties of mirrors and lasers. AFM images show mirror's root mean square roughness is nearly 1 nm. The Spectrophotometer results of the front facet transmission and the back facet reflection are in good agreement with the simulation results. Optical output power (P) versus driving current (I) characteristics, measured before and after coating the facet, revealed a significant output power enhancement due to optimized AR and HR optical coatings on facets.

  12. Ion beam assisted film growth

    CERN Document Server

    Itoh, T

    2012-01-01

    This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

  13. Effects of calcium phosphate coating to SLA surface implants by the ion-beam-assisted deposition method on self-contained coronal defect healing in dogs.

    Science.gov (United States)

    Yoon, Heun-Joo; Song, Ji-Eun; Um, Yoo-Jung; Chae, Gyung Joon; Chung, Sung-Min; Lee, In-Seop; Jung, Ui-Won; Kim, Chang-Sung; Choi, Seong-Ho

    2009-08-01

    The aim of this study was to evaluate the healing of self-contained coronal defects on a sand-blasted, large-grit, acid-etched (SLA) surface implant, which had a calcium phosphate (CaP) coating applied by ion-beam-assisted deposition (IBAD). We also evaluated the effect of heating the coating to different temperatures. The CaP-coated SLA implants exhibited a slightly larger bone healing capacity in the self-contained coronal defect than SLA implants, indicating that combining SLA surface implants and a CaP coating by the IBAD method had synergistic effects on bone healing. There was no difference in the healing capacity between 350 degrees C and 450 degrees C heat treatment of the coating layer.

  14. Effects of calcium phosphate coating to SLA surface implants by the ion-beam-assisted deposition method on self-contained coronal defect healing in dogs

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Heun-Joo; Song, Ji-Eun; Um, Yoo-Jung; Chae, Gyung Joon; Jung, Ui-Won; Kim, Chang-Sung; Choi, Seong-Ho [Department of Periodontology, Research Institute for Periodontal Regeneration, College of Dentistry, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul 120-752 (Korea, Republic of); Chung, Sung-Min [Dentium Co., Seoul (Korea, Republic of); Lee, In-Seop, E-mail: shchoi726@yuhs.a [Institute of Physics and Applied Physics, Atomic-scale Surface Science Research Center, Yonsei University, Seoul (Korea, Republic of)

    2009-08-15

    The aim of this study was to evaluate the healing of self-contained coronal defects on a sand-blasted, large-grit, acid-etched (SLA) surface implant, which had a calcium phosphate (CaP) coating applied by ion-beam-assisted deposition (IBAD). We also evaluated the effect of heating the coating to different temperatures. The CaP-coated SLA implants exhibited a slightly larger bone healing capacity in the self-contained coronal defect than SLA implants, indicating that combining SLA surface implants and a CaP coating by the IBAD method had synergistic effects on bone healing. There was no difference in the healing capacity between 350 deg. C and 450 deg. C heat treatment of the coating layer.

  15. Computer simulation of transient layer chemical composition in Cr-N films obtained by ion beam assisted deposition

    CERN Document Server

    Marchenko, I G

    2001-01-01

    The computer simulation of Cr-N film deposition by IBAD method was carried out. The implanted nitrogen content in the growing film is calculated, values of the radiation defect formation in the film are obtained. The variation of the implanted nitrogen relationship to the defect distribution in the growing film depth is analyzed.

  16. Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Jian-ping [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Fu, Zhi-qiang, E-mail: fuzq@cugb.edu.cn [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Xiao-peng [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Yue, Wen; Wang, Cheng-biao [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China)

    2014-10-30

    Highlights: • AlN films were fabricated by dual ion beam sputtering. • Chemical bond status and phase composition of the films were studied by XPS and XRD. • Optical constants were measured by spectroscopic ellipsometry. • Influence of ion/atom arrival ratio on the films was studied. - Abstract: In order to improve the optical properties of AlN films, the influence of the ion/atom arrival ratio on the structure and optical characteristics of AlN films deposited by dual ion beam sputtering was studied by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The films prepared at the ion/atom arrival ratio of 1.4 are amorphous while the crystalline quality is improved with the increase of the ion/atom arrival ratio. The films deposited at the ion/atom arrival ratio of no less than 1.8 have an approximately stoichiometric ratio and mainly consist of aluminum nitride with little aluminum oxynitride, while metallic aluminum component appears in the films deposited at the ion/atom arrival ratio of 1.4. When the ion/atom arrival ratio is not less than 1.8, films are smooth, high transmitting and dense. The films prepared with high ion/atom arrival ratio (≥1.8) display the characteristic of a dielectric. The films deposited at the ion/atom arrival ratio of 1.4 are coarse, opaque and show characteristic of cermet.

  17. Thickness dependence of magnetic properties and giant magneto-impedance effect in amorphous Co73Si12B15 thin films prepared by Dual-Ion beam assisted deposition

    Science.gov (United States)

    Zhang, Yu; Wang, San-sheng; Hu, Teng; He, Tong-fu; Chen, Zi-yu; Yi, Zhong; Meng, Li-Fei

    2017-03-01

    Dual-Ion Beam Assisted Deposition is a suitable method for the preparation of giant magneto-impedance (GMI) materials. In this paper, Co73Si12B15 thin films with different thicknesses were prepared by Dual-Ion Beam Assisted Deposition, and the influences of film thickness on magnetic properties and GMI effect were investigated. It was found that the asymmetric magnetic hysteresis loop in the prepared Co73Si12B15 thin films occurs at ambient temperature, and the shift behavior of hysteresis loop associated with film thickness. With the film thickness increasing, the values of shift field and coercive field and other parameters such as remanence and shift ratio appeared complex variation. At a certain frequency, the large GMI effect is only observed in some films, which have good magnetic properties including low coercivity, low remanence ratio and high shift ratio. The results indicated that the thickness dependence of magnetic properties nonlinearly determined the GMI effect in Co73Si12B15 thin films.

  18. Structural effects due to the incorporation of Ar atoms in the lattice of ZrO sub 2 thin films prepared by ion beam assisted deposition

    CERN Document Server

    Holgado, J P; Veen, A V; Schut, H; Hosson, J T M; González-Elipe, A R

    2002-01-01

    Two sets of ZrO sub 2 thin films have been prepared at room temperature by ion beam induced chemical vapour deposition and subsequently annealed up to 1323 K. The two sets of samples have been prepared by using either O sub 2 sup + or mixtures of (O sub 2 sup + +Ar sup +) ions for the decomposition of a volatile metallorganic precursor of zirconium. The structure and microstructure of these two sets of samples have been determined by means of X-ray diffraction, Fourier transform infrared spectroscopy and positron beam analysis (PBA). The samples were very compact and dense and had a very low-surface roughness. After annealing in air at T>=573 K both sets of films were transparent and showed similar refraction indexes. For the (O sub 2 sup + +Ar sup +)-ZrO sub 2 thin films it is shown by X-ray photoelectron spectroscopy and Rutherford back scattering that a certain amount of incorporated Ar (5-6 at.%) remains incorporated within the oxide lattice. No changes were detected in the amount of incorporated Ar even ...

  19. Focused helium-ion-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Alkemade, P.F.A.; Miro, H. [Delft University of Technology, Kavli Institute of Nanoscience, Delft (Netherlands)

    2014-12-15

    The recent introduction of the helium ion microscope (HIM) offers new possibilities for materials modification and fabrication with spatial resolution below 10 nm. In particular, the specific interaction of He{sup +} ions in the tens of keV energy range with materials - i.e., minimal deflection and mainly energy loss via electronic excitations - renders the HIM a special tool for ion-beam-induced deposition. In this work, an overview is given of all studies of helium-ion-beam-induced deposition (He-IBID) that appeared in the literature before summer 2014. Continuum models that describe the deposition processes are presented in detail, with emphasis on precursor depletion and replenishment. In addition, a Monte Carlo model is discussed. Basic experimental He-IBID studies are critically examined. They show deposition rates of up to 0.1 nm{sup 3}/ion. Analysis by means of a continuum model yields the precursor diffusion constant and the cross sections for beam-induced precursor decomposition and beam-induced desorption. Moreover, it is shown that deposition takes place only in a small zone around the beam impact point. Furthermore, the characterization of deposited materials is discussed in terms of microstructure and resistivity. It is shown that He-IBID material resembles more electron-beam-induced-deposition (EBID) material than Ga-ion-beam-induced-deposition (Ga-IBID) material. Nevertheless, the spatial resolution for He-IBID is in general better than for EBID and Ga-IBID; in particular, proximity effects are minimal. (orig.)

  20. Ferroelectric and ferromagnetic properties of epitaxial BiFeO{sub 3}-BiMnO{sub 3} films on ion-beam-assisted deposited TiN buffered flexible Hastelloy

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, J., E-mail: jiexiong@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Los Alamos National Laboratory, Center for Integrated Nanotechnologies, Division of Materials Physics and Applications, Los Alamos, New Mexico 87545 (United States); Matias, V.; Jia, Q. X. [Los Alamos National Laboratory, Center for Integrated Nanotechnologies, Division of Materials Physics and Applications, Los Alamos, New Mexico 87545 (United States); Tao, B. W.; Li, Y. R. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2014-05-07

    Growth of multifunctional thin films on flexible substrates is of great technological significance since such a platform is needed for flexible electronics. In this study, we report the growth of biaxially aligned (BiFeO{sub 3}){sub 0.5}:(BiMnO{sub 3}){sub 0.5} [BFO-BMO] films on polycrystalline Hastelloy by using a biaxially aligned TiN as a seed layer deposited by ion-beam-assisted deposited and a La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) as a buffer layer deposited by pulsed laser deposition. The LSMO is used not only as a buffer layer but also as the bottom electrode of the BFO-BMO films. X-ray diffraction showed that the BFO-BMO films are biaxially oriented along both in-plane and out-of-plane directions. The BFO-BMO films on flexible metal substrates showed a polarization of 22.9 μC/cm{sup 2}. The magnetization of the BFO-BMO/LSMO is 62 emu/cc at room temperature.

  1. Dual Ion Beam Deposition Of Diamond Films On Optical Elements

    Science.gov (United States)

    Deutchman, Arnold H.; Partyka, Robert J.; Lewis, J. C.

    1990-01-01

    Diamond film deposition processes are of great interest because of their potential use for the formation of both protective as well as anti-reflective coatings on the surfaces of optical elements. Conventional plasma-assisted chemical vapor deposition diamond coating processes are not ideal for use on optical components because of the high processing temperatures required, and difficulties faced in nucleating films on most optical substrate materials. A unique dual ion beam deposition technique has been developed which now makes possible deposition of diamond films on a wide variety of optical elements. The new DIOND process operates at temperatures below 150 aegrees Farenheit, and has been used to nucleate and grow both diamondlike carbon and diamond films on a wide variety of optical :taterials including borosilicate glass, quartz glass, plastic, ZnS, ZnSe, Si, and Ge.

  2. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Aronne, Antonio [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Bloisi, Francesco, E-mail: bloisi@na.infn.it [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy); Calabria, Raffaela; Califano, Valeria [Istituto Motori – CNR, Naples (Italy); Depero, Laura E. [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Fanelli, Esther [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Federici, Stefania [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Massoli, Patrizio [Istituto Motori – CNR, Naples (Italy); Vicari, Luciano R.M. [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy)

    2015-05-01

    Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

  3. Ion-Bombardment of X-Ray Multilayer Coatings - Comparison of Ion Etching and Ion Assisted Deposition

    NARCIS (Netherlands)

    Puik, E. J.; van der Wiel, M. J.; Zeijlemaker, H.; Verhoeven, J.

    1991-01-01

    The effects of two forms of ion bombardment treatment on the reflectivity of multilayer X-ray coatings were compared: ion etching of the metal layers, taking place after deposition, and ion bombardment during deposition, the so-called ion assisted deposition. The ion beam was an Ar+ beam of 200 eV,

  4. The Effects of Annealing and Discharging on the Characteristics of MgO Thin Films Prepared by Ion Beam-Assisted Deposition as a Protective Layer of AC-PDP

    Institute of Scientific and Technical Information of China (English)

    YU Zhinong; SUN Jian; XUE Wei; ZHENG Dexiu

    2007-01-01

    This study investigated the effects of annealing and discharging on the characteristics of MgO thin films prepared by ion beam-assisted deposition as a protective layer of AC-PDP. By an annealing process at a temperature of 450 °C for more than three hours, the crystallinity of the deposited MgO films was improved, but the surface of the (200)-oriented MgO thin films in the vicinity of the discharge electrodes, especially on the inner sides of the electrodes, was subjected to crack formation. The failure mechanism of the (200)-oriented MgO films was due to the compressive stress of MgO films plus the additional compressive stress induced by the differences in the coefficient of thermal expansion between the electrode and the dielectric layer. In the discharging process, all MgO films were eroded unevenly, and the serious erosion occurred near the edges of the discharge electrodes. ATM(atomic force microscopy) images show that the eroded surface of the (200)-oriented MgO thin film is smoother than that of the (lll)-oriented film. Also, the (200)-oriented MgO thin film shows an improved ability to resist ion erosion compared to the (lll)-oriented film.

  5. Ion beam and dual ion beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1994-11-01

    Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

  6. Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1995-02-01

    Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

  7. Electron beam niobium oxide powder deposition

    Energy Technology Data Exchange (ETDEWEB)

    Almeida, D.S. [Centro Tecnico Aeroespacial (CTA), Sao Jose dos Campos, SP (Brazil); Nono, M.C.A. [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil); Silva, C.R.M. [Universidade de Brasilia (UnB), Brasilia, DF (Brazil)

    2009-07-01

    Full text: Zirconium oxide applied by Electron Beam –Physical Vapor Deposition can produce high quality coatings for high temperature blades. In this work niobium, yttrium and zirconium oxides were applied on metallic substrates, using EB-PVD, aiming thermal conductivity reduction. Coating characterization has been performed by X-ray diffractometry and scanning electron microscopy. X-ray diffractometry shows only tetragonal phase for the composition range evaluated, with tetragonality increase for higher niobium oxide amounts. Higher amounts of niobium promote reduction of ceramic coating theoretical density and thermal conductivity. (author)

  8. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    Science.gov (United States)

    Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R. M.

    2015-05-01

    Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

  9. Technology basis and perspectives on focused electron beam induced deposition and focused ion beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rius, Gemma, E-mail: rius.gemma@nitech.ac.jp

    2014-12-15

    The main characteristics of focused electron beam induced deposition (FEBID) and focused ion beam induced deposition (FIBID) are presented. FEBID and FIBID are two nanopatterning techniques that allow the fabrication of submicron patterns with nanometer resolution on selected locations of any kind of substrate, even on highly structured supports. The process consists of mask less serial deposition and can be applied to a wide variety of materials, depending strictly on the precursor material source used. The basic mechanism of FEBID and FIBID is the adsorption of volatile precursor molecules onto the sample surface and decomposition of the molecules induced by the energetic electron and ion focused beams. The essential similarities of the two techniques are presented and especial emphasis is dedicated to highlighting their main differences, such as aspects related to resolution, deposition rate, deposits purity, substrate integrity, etc. In both cases, the factors interplay and complex mechanisms are still understood in a qualitative basis, so much work can still be done in terms of modeling and simulating the processes involved in FEBID and FIBID. Current work on FEBID and FIBID is presented through examples of achievements, interesting results and novel approaches.

  10. Focused electron beam induced deposition: A perspective

    Directory of Open Access Journals (Sweden)

    Michael Huth

    2012-08-01

    Full Text Available Background: Focused electron beam induced deposition (FEBID is a direct-writing technique with nanometer resolution, which has received strongly increasing attention within the last decade. In FEBID a precursor previously adsorbed on a substrate surface is dissociated in the focus of an electron beam. After 20 years of continuous development FEBID has reached a stage at which this technique is now particularly attractive for several areas in both, basic and applied research. The present topical review addresses selected examples that highlight this development in the areas of charge-transport regimes in nanogranular metals close to an insulator-to-metal transition, the use of these materials for strain- and magnetic-field sensing, and the prospect of extending FEBID to multicomponent systems, such as binary alloys and intermetallic compounds with cooperative ground states.Results: After a brief introduction to the technique, recent work concerning FEBID of Pt–Si alloys and (hard-magnetic Co–Pt intermetallic compounds on the nanometer scale is reviewed. The growth process in the presence of two precursors, whose flux is independently controlled, is analyzed within a continuum model of FEBID that employs rate equations. Predictions are made for the tunability of the composition of the Co–Pt system by simply changing the dwell time of the electron beam during the writing process. The charge-transport regimes of nanogranular metals are reviewed next with a focus on recent theoretical advancements in the field. As a case study the transport properties of Pt–C nanogranular FEBID structures are discussed. It is shown that by means of a post-growth electron-irradiation treatment the electronic intergrain-coupling strength can be continuously tuned over a wide range. This provides unique access to the transport properties of this material close to the insulator-to-metal transition. In the last part of the review, recent developments in mechanical

  11. Nanoscale Soldering of Positioned Carbon Nanotubes using Highly Conductive Electron Beam Induced Gold Deposition

    DEFF Research Database (Denmark)

    Madsen, Dorte Nørgaard; Mølhave, Kristian; Mateiu, Ramona Valentina

    2003-01-01

    We have developed an in-situ method for controlled positioning of carbon nanotubes followed by highly conductive contacting of the nanotubes, using electron beam assisted deposition of gold. The positioning and soldering process takes place inside an Environmental Scanning Electron Microscope (E...

  12. Mechanically assisted laser forming of thin beams

    Science.gov (United States)

    Mucha, Zygmunt; Widłaszewski, Jacek; Kurp, Piotr; Mulczyk, Krystian

    2016-12-01

    Laser-assisted forming techniques have been developed in recent years to aid plastic working of materials, which are difficult in processing at normal temperatures due to a high brittleness, effects of high work-hardening or a high spring-back phenomenon. This paper reports initial experimental investigations and numerical simulations of a mechanically-assisted laser forming process. The research is aimed at facilitating plastic shaping of thin-walled parts made of high temperature resistant alloys. Stainless steel plate, 1 mm thick, 20 mm wide, was mounted in the cantilever arrangement and a gravitational load was applied to its free end. A CO2 laser beam with rectangular cross-section traversed along the plate, towards the fixed edge. Laser spot covered the whole width of the plate. Experiments and simulations using the finite element method were performed for different values of mechanical load and with constant laser processing parameters. Experimentally validated numerical model allowed analysis of plastic deformation mechanism under the hybrid thermo-mechanical processing. The revealed mechanism of deformation consists in intense material plastic flow near the laser heated surface. This behavior results mainly from the tension state close to the heated surface and the decrease of material yield stress at elevated temperature. Stress state near the side edges of the processed plate favored more intense plastic deformation and the involved residual stress in this region.

  13. Stress in ion-beam assisted silicon dioxide and tantalum pentoxide thin films

    CERN Document Server

    Sirotkina, N

    2003-01-01

    Ta sub 2 O sub 5 and SiO sub 2 thin films, deposited at room temperature by ion-beam sputtering (IBS) and dual ion-beam sputtering (DIBS), and SiO sub 2 films, deposited by reactive e-beam evaporation and ion-assisted deposition, were studied. The energy (150-600 eV) and ion-to-atom arrival ratio (0.27-2.0) of assisting argon and oxygen ions were varied. Influence of deposition conditions (deposition system geometry, nature and amount of gas in the chamber, substrate cleaning and ion-assistance parameters) on films properties (stress, composition, refractive index n sub 5 sub 0 sub 0 sub n sub m and extinction coefficient k sub 5 sub 0 sub 0 sub n sub m) was investigated. A scanning method, based on substrate curvature measurements by laser reflection and stress calculation using the Stoney equation, was employed. RBS showed that stoichiometric Ta sub 2 O sub 5 films contain impurities of Ar, Fe and Mo. Stoichiometric SiO sub 2 films also contain Ta impurity. Argon content increases with ion bombardment and, ...

  14. Ion-assisted deposition of lanthanide trifluorides for VUV applications

    Science.gov (United States)

    Lingg, L. J.; Targove, J. D.; Lehan, J. P.; Macleod, H. A.

    1987-01-01

    The lanthanide trifluorides show promise as vacuum ultraviolet (VUV) coating materials. The optical properties of single-layer coatings vary with deposition temperature, and with ion-beam energy and current density. The optical constants, stoichiometry, durability, moisture adsorption, and crystallinity are studied for trifluoride films made under a variety of deposition conditions.

  15. Semiconductor assisted metal deposition for nanolithography applications

    Science.gov (United States)

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2001-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  16. Mo SILICIDE SYNTHISIS BY DUAL ION BEAM DEPOSITION

    Institute of Scientific and Technical Information of China (English)

    T.H. Zhang; Z.Z. Yi; X.Y. Wu; S.J. Zhang; Y.G. Wu; X. Zhang; H.X. Zhang; A.D. Liu; X.J. Zhang

    2002-01-01

    Mo silicides MosSi3 with high quality were prepared using ion beam deposition equip-ment with two Filter Metal Vacuum Arc Deposition (FMEVAD). When the numberof alternant deposition times was 198, total thickness of the coating is 40nm. Thecoatings with droplet free can be readily obtained, so the surface is smooth. TEMobservation shows that Mo and Si alternant deposition coating is conpact structure.The fine Mo silicide grains densely distributed in the coating. The coating adherenceon silicon is excellent.

  17. Imprint reduction in rotating heavy ions beam energy deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bret, A., E-mail: antoineclaude.bret@uclm.es [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, MS-51, Cambridge, MA 02138 (United States); ETSI Industriales, Universidad Castilla-La Mancha, 13071 Ciudad Real (Spain); Instituto de Investigaciones Energéticas y Aplicaciones Industriales, Campus Universitario de Ciudad Real, 13071 Ciudad Real (Spain); Piriz, A.R., E-mail: Roberto.Piriz@uclm.es [ETSI Industriales, Universidad Castilla-La Mancha, 13071 Ciudad Real (Spain); Instituto de Investigaciones Energéticas y Aplicaciones Industriales, Campus Universitario de Ciudad Real, 13071 Ciudad Real (Spain); Tahir, N.A., E-mail: n.tahir@gsi.de [GSI Darmstadt, Plankstrasse 1, 64291 Darmstadt (Germany)

    2014-01-01

    The compression of a cylindrical target by a rotating heavy ions beam is contemplated in certain inertial fusion schemes or in heavy density matter experiments. Because the beam has its proper temporal profile, the energy deposition is asymmetric and leaves an imprint which can have important consequences for the rest of the process. In this paper, the Fourier components of the deposited ion density are computed exactly in terms of the beam temporal profile and its rotation frequency Ω. We show that for any beam profile of duration T, there exist an infinite number of values of ΩT canceling exactly any given harmonic. For the particular case of a parabolic profile, we find possible to cancel exactly the first harmonic and nearly cancel every other odd harmonics. In such case, the imprint amplitude is divided by 4 without any increase of Ω.

  18. Multi-electron beam system for high resolution electron beam induced deposition

    NARCIS (Netherlands)

    Van Bruggen, M.J.

    2008-01-01

    The development of a multi-electron beam system is described which is dedicated for electron beam induced deposition (EBID) with sub-10 nm resolution. EBID is a promising mask-less nanolithography technique which has the potential to become a viable technique for the fabrication of 20-2 nm structure

  19. Direct deposition of gold on silicon with focused ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Irradiation with ions at very low energies (below 500 eV) no longer induces a removal of substrate material, but the ions are directly deposited on the surface. In this way, gold has been deposited on silicon with focused ion beam exposure and the properties of the film have been investigated with atomic force microscopy and Auger electron spectroscopy. (author) 3 figs., 1 ref.

  20. Microreactor-Assisted Solution Deposition for Compound Semiconductor Thin Films

    Directory of Open Access Journals (Sweden)

    Chang-Ho Choi

    2014-05-01

    Full Text Available State-of-the-art techniques for the fabrication of compound semiconductors are mostly vacuum-based physical vapor or chemical vapor deposition processes. These vacuum-based techniques typically operate at high temperatures and normally require higher capital costs. Solution-based techniques offer opportunities to fabricate compound semiconductors at lower temperatures and lower capital costs. Among many solution-based deposition processes, chemical bath deposition is an attractive technique for depositing semiconductor films, owing to its low temperature, low cost and large area deposition capability. Chemical bath deposition processes are mainly performed using batch reactors, where all reactants are fed into the reactor simultaneously and products are removed after the processing is finished. Consequently, reaction selectivity is difficult, which can lead to unwanted secondary reactions. Microreactor-assisted solution deposition processes can overcome this limitation by producing short-life molecular intermediates used for heterogeneous thin film synthesis and quenching the reaction prior to homogeneous reactions. In this paper, we present progress in the synthesis and deposition of semiconductor thin films with a focus on CdS using microreactor-assisted solution deposition and provide an overview of its prospect for scale-up.

  1. Scaling in film growth by pulsed laser deposition and modulated beam deposition.

    Science.gov (United States)

    Lee, Sang Bub

    2011-04-01

    The scalings in film growth by pulsed laser deposition (PLD) and modulated beam deposition (MBD) were investigated by Monte Carlo simulations. In PLD, an atomic pulse beam with a period t(0) were deposited instantaneously on a substrate, whereas in MBD, adatoms were deposited during a short time interval t(1) (0≤t(1)≤t(0)) within each period. If t(1)=0, MBD will be identical to PLD and, if t(1)=t(0), MBD will become usual molecular beam epitaxy (MBE). Specifically, logarithmic scaling was investigated for the nucleation density reported for PLD, and the scaling of island density was studied regarding the growth for 0MBE growth was observed as t(1) increased. The phase diagram was also presented.

  2. Electrostatic force assisted deposition of graphene

    Science.gov (United States)

    Liang, Xiaogan [Berkeley, CA

    2011-11-15

    An embodiment of a method of depositing graphene includes bringing a stamp into contact with a substrate over a contact area. The stamp has at least a few layers of the graphene covering the contact area. An electric field is developed over the contact area. The stamp is removed from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.

  3. Proximity effect in ion-beam-induced deposition of nanopillars

    NARCIS (Netherlands)

    Chen, P.; Salemink, H.W.M.; Alkemade, P.F.A.

    2009-01-01

    Ion-beam-induced deposition (IBID) is a powerful technique for prototyping three-dimensional nanostructures. To study its capability for this purpose, the authors investigate the proximity effect in IBID of nanopillars. In particular, the changes in shape and dimension of pillars are studied when a

  4. Solid gold nanostructures fabricated by electron beam deposition

    DEFF Research Database (Denmark)

    Mølhave, Kristian; Madsen, Dorte Nørgaard; Rasmussen, A.M.;

    2003-01-01

    Direct writing with gold by electron beam deposition is a method for rapid fabrication of electrically conducting nanostructures. An environmental scanning electron microscope (ESEM) equipped with a source of the precursor gas dimethylacetylacetonate gold(Ill) was used to fabricate nanoscale tips...

  5. Fabrication of plasmonic nanostructures with electron beam induced deposition

    NARCIS (Netherlands)

    Acar, H.

    2013-01-01

    The work described in this thesis was shaped by the goal---coming up new approaches to fabricate plasmonic materials with electron beam induced deposition (EBID). One-step, bottom-up and direct-write are typical adjectives that are used to indicate the advantageous properties of this technique. Thes

  6. Power deposition of deuteron beam in fast ignition

    Science.gov (United States)

    Azadifar, R.; Mahdavi, M.

    2017-02-01

    In ion fast ignition (FI) inertial confinement fusion (ICF), a laser accelerated ion beam called igniter provides energy required for ignition of a fuel pellet. The laser accelerated deuteron beam is considered as igniter. The deuteron beam with Maxwellian energy distribution produced at the distance d = 500 μm, from fuel surface, travels during time t = 20 ps and arrives with power P1D(t,TD) to the fuel surface. Then, the deuteron beam deposits its energy into fuel by Coulomb and nuclear interactions with background plasma particles during time t = 10 ps, with power P2D(t,TD,Tb). Since time and power of the two stages have same order, to calculate the total power deposited by igniter beam, both stages must be considered simultaneously. In this paper, the exact power of each stage has been calculated separately, and the total power Ptotal(t,TD,Tb) has been obtained. The obtained results show that the total power deposition Ptotal(t,TD,Tb) is significantly reduced due to reducing different temperature between projectile and target particles.

  7. Calculation of the energy deposition in a water beam dump

    CERN Document Server

    Schönbacher, Helmut

    1975-01-01

    The energy deposition per interacting proton in GeV/cm/sup 3/ and the star density in star/cm/sup 3/ have been calculated in a water cylinder with a Monte Carlo computer program. These calculations permit the estimation of the temperature rise, induced radioactivity, etc., in beam dumps of high energy accelerator and storage rings. The calculation assumed a cylinder of different diameters and lengths and an incident proton beam energy of 20, 200, 300 and 400 GeV. (5 refs).

  8. Morphology Simulation for Ion-Assisted Deposition Process

    Institute of Scientific and Technical Information of China (English)

    Jenn-SenLin; Shin-PonJu; Jian-MingLu

    2004-01-01

    The molecular dynamics simulation is applied to investigate the lnfluence of the incident 1on energy ana mclident angular distribution upon ion-assisted deposition process. The Cu-Cu and Ar-Cu interactions are modeled using the many body tight-binding potential and the Moliere potential, respectively, and the interface width is used to characterize the surface roughness properties at both transient and final state conditions. The results show that the surface roughness of the deposition film is lower when more Ar-to-Cu ratio is used at the same incident energy and angle. For the relative low or high incident energy, the film morphologies are not sensitive to the incident angle. However, if the incident energy of the argon ions is too high, the film morphology will be worse than that without using the ion-assisted deposition.

  9. Multi-electron beam system for high resolution electron beam induced deposition

    OpenAIRE

    Van Bruggen, M.J.

    2008-01-01

    The development of a multi-electron beam system is described which is dedicated for electron beam induced deposition (EBID) with sub-10 nm resolution. EBID is a promising mask-less nanolithography technique which has the potential to become a viable technique for the fabrication of 20-2 nm structures after 2013, as described by the International Technology Roadmap for Semiconductors (ITRS), or can be used for rapid prototyping in research applications. The key point is to combine the throughp...

  10. Ion Beam Induced Surface Modulations from Nano to Pico: Optimizing Deposition During Erosion and Erosion During Deposition.

    Energy Technology Data Exchange (ETDEWEB)

    MoberlyChan, W J; Schalek, R

    2007-11-08

    Ion beams of sufficient energy to erode a surface can lead to surface modulations that depend on the ion beam, the material surface it impinges, and extrinsic parameters such as temperature and geometric boundary conditions. Focused Ion Beam technology both enables site-specific placement of these modulations and expedites research through fast, high dose and small efficient use of material. The DualBeam (FIB/SEM) enables in situ metrology, with movies observing ripple formation, wave motion, and the influence of line defects. Nanostructures (ripples of >400nm wavelength to dots spaced <40nm) naturally grow from atomically flat surfaces during erosion, however, a steady state size may or may not be achieved as a consequence of numerous controlled parameters: temperature, angle, energy, crystallography. Geometric factors, which can be easily invoked using a FIB, enable a controlled component of deposition (and/or redeposition) to occur during erosion, and conversely allow a component of etching to be incurred during (ion-beam assisted) deposition. High angles of ion beam inclination commonly lead to 'rougher' surfaces, however, the extreme case of 90.0{sup o} etching enables deposition of organized structures 1000 times smaller than the aforementioned, video-recorded nanostructures. Orientation and position of these picostructures (naturally quantized by their atomic spacings) may be controlled by the same parameters as for nanostructures (e.g. ion inclination and imposed boundary conditions, which are flexibly regulated by FIB). Judicious control of angles during FIB-CVD growth stimulates erosion with directionality that produces surface modulations akin to those observed for sputtering. Just as a diamond surface roughens from 1-D ripples to 2-D steps with increasing angle of ion sputtering, so do ripples and steps appear on carbon-grown surfaces with increase in angle of FIB-CVD. Ion beam processing has been a stalwart of the microelectronics industry

  11. Electron beam assisted field evaporation of insulating nanowires/tubes

    Energy Technology Data Exchange (ETDEWEB)

    Blanchard, N. P., E-mail: nicholas.blanchard@univ-lyon1.fr; Niguès, A.; Choueib, M.; Perisanu, S.; Ayari, A.; Poncharal, P.; Purcell, S. T.; Siria, A.; Vincent, P. [Institut Lumière Matière, UMR5306 Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne Cedex (France)

    2015-05-11

    We demonstrate field evaporation of insulating materials, specifically BN nanotubes and undoped Si nanowires, assisted by a convergent electron beam. Electron irradiation leads to positive charging at the nano-object's apex and to an important increase of the local electric field thus inducing field evaporation. Experiments performed both in a transmission electron microscope and in a scanning electron microscope are presented. This technique permits the selective evaporation of individual nanowires in complex materials. Electron assisted field evaporation could be an interesting alternative or complementary to laser induced field desorption used in atom probe tomography of insulating materials.

  12. Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

    Directory of Open Access Journals (Sweden)

    C. G. Jin

    2008-01-01

    Full Text Available Silicon carbide (SiC films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM, scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

  13. Ion assisted deposition of SiO2 film from silicon

    Science.gov (United States)

    Pham, Tuan. H.; Dang, Cu. X.

    2005-09-01

    Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

  14. Electron-beam-assisted Scanning Tunneling Microscopy Of Insulating Surfaces

    CERN Document Server

    Bullock, E T

    2000-01-01

    Insulating materials are widely used in electronic devices. Bulk insulators and insulating films pose unique challenges for high resolution study since most commonly used charged particle surface analysis techniques are incompatible with insulating surfaces and materials. A, method of performing scanning tunneling microscopy (STM) on insulating surfaces has been investigated. The method is referred to as electron-beam assisted scanning tunneling microscopy (e-BASTM). It is proposed that by coupling the STM and the scanning electron microscopy (SEM) as one integrated device, that insulating materials may be studied, obtaining both high spatial resolution, and topographic and electronic resolution. The premise of the technique is based on two physical consequences of the interaction of an energetic electron beam (PE) with a material. First, when an electron beam is incident upon a material, low level material electrons are excited into conduction band states. For insulators, with very high secondary electron yi...

  15. Optical properties of plasma ion-assisted deposition silicon coatings: application to the manufacture of blocking filters for the near-infrared region.

    Science.gov (United States)

    Bruynooghe, Stephane

    2008-05-01

    I report on the preparation and characterization of optical constants of silicon coatings deposited by an electron beam gun with plasma ion-assisted deposition. With the fabrication of long-wave-pass filters the reliability of the optical constants is assured.

  16. Nanocrystalline Diamond Films Deposited by Electron Assisted Hot Filament Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Nanocrystalline diamond films were deposited on polished Si wafer surface with electron assisted hot filament chemical vapor deposition at 1 kPa gas pressure, the deposited films were characterized and observed by Raman spectrum, X-ray diffraction, atomic force microscopy and semiconductor characterization system. The results show that when 8 A bias current is applied for 5 h, the surface roughness decreases to 28.5 nm. After 6 and 8 A bias current are applied for 1 h, and the nanocrystalline films deposition continue for 4 h with 0 A bias current at 1 kPa gas pressure. The nanocrystalline diamond films with 0.5×109 and 1×1010 Ω·cm resistivity respectively are obtained. It is demonstrated that electron bombardment plays an important role of nucleation to deposit diamond films with smooth surface and high resistivity.

  17. Substrate heating measurements in pulsed ion beam film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Olson, J.C.; Davis, H.A.; Rej, D.J.; Waganaar, W.J. [Los Alamos National Lab., NM (United States); Tallant, D.R. [Cornell Univ., Ithaca, NY (United States). Materials Science and Engineering Dept.; Thompson, M.O. [Sandia National Labs., Albuquerque, NM (United States)

    1995-05-01

    Diamond-like Carbon (DLC) films have been deposited at Los Alamos National Laboratory by pulsed ion beam ablation of graphite targets. The targets were illuminated by an intense beam of hydrogen, carbon, and oxygen ions at a fluence of 15-45 J/cm{sup 2}. Ion energies were on the order of 350 keV, with beam current rising to 35 kA over a 400 ns ion current pulse. Raman spectra of the deposited films indicate an increasing ratio of sp{sup 3} to sp{sup 2} bonding as the substrate is moved further away from the target and further off the target normal. Using a thin film platinum resistor at varying positions, we have measured the heating of the substrate surface due to the kinetic energy and heat of condensation of the ablated material. This information is used to determine if substrate heating is responsible for the lack of DLC in positions close to the target and near the target normal. Latest data and analysis will be presented.

  18. Influence of deposited CNTs on the surface of carbon fiber by ultrasonically assisted electrophoretic deposition

    Science.gov (United States)

    Jiang, J. J.; Liu, F.; Deng, C.; Fang, L. C.; Li, D. J.

    2015-07-01

    The surface property of carbon fiber directly affects the interface performance between carbon fiber and matrix. To improve the surface property of carbon fiber, we proposed a simple method to prepare carbon nanotubes /carbon fiber hybrid fiber via ultrasonically assisted electrophoretic deposition (EPD). Surface morphologies and surface functional group of carbon fibers were examined by atomic force microscopy (AFM), scanning electron microscopy (SEM) and fourier transform infrared spectrometer (FTIR), respectively. The results show that the deposition of carbon nanotubes changed the surface morphologies of carbon fibers and introduced polar groups (C=O and C-O) to carbon fiber surface. Comparing the results with EPD-only, ultrasonically assisted EPD increased the uniformity of carbon nanotubes coatings whereas only sparse and not uniformly deposition formed without ultrasonic.

  19. Photon beam convolution using polyenergetic energy deposition kernels

    Energy Technology Data Exchange (ETDEWEB)

    Hoban, P.W.; Murray, D.C.; Round, W.H. (Waikato Univ., Hamilton (New Zealand). Dept. of Physics)

    1994-04-01

    In photon beam convolution calculations where polyenergetic energy deposition kernels (EDKs) are used, the primary photon energy spectrum should be correctly accounted for in Monte Carlo generation of EDKs. This requires the probability of interaction, determined by the linear attenuation coefficient, [mu], to be taken into account when primary photon interactions are forced to occur at the EDK origin. The use of primary and scattered EDKs generated with a fixed photon spectrum can give rise to an error in the dose calculation due to neglecting the effects of beam hardening with depth. The proportion of primary photon energy that is transferred to secondary electrons increases with depth of interaction, due to the increase in the ratio [mu][sub ab]/[mu] as the beam hardens. Convolution depth-dose curves calculated using polyenergetic EDKs generated for the primary photon spectra which exist at depths of 0, 20 and 40 cm in water, show a fall-off which is too steep when compared with EGS4 Monte Carlo results. A beam hardening correction factor applied to primary and scattered 0 cm EDKs, based on the ratio of kerma to terma at each depth, gives primary, scattered and total dose in good agreement with Monte Carlo results. (Author).

  20. Chemical vapour deposited diamonds for dosimetry of radiotherapeutical beams

    Energy Technology Data Exchange (ETDEWEB)

    Bucciolini, M.; Mazzocchi, S. [Firenze Univ., Firenze (Italy). Dipartimento di Fisiopatologia Clinica; INFN, Firenze (Italy); Borchi, E.; Bruzzi, M.; Pini, S.; Sciortino, S. [Firenze Univ., Firenze (Italy). Dipartimento di Energetica; INFN, Firenze (Italy); Cirrone, G.A.P.; Guttone, G.; Raffaele, L.; Sabini, M.G. [INFN, Catania (Italy). Laboratori Nazionali del Sud

    2002-07-01

    This paper deals with the application of synthetic diamond detectors to the clinical dosimetry of photon and electron beams. It has been developed in the frame of INFN CANDIDO project and MURST Cofin. Diamonds grown with CVD (Chemical Vapour Deposition) technique have been studied; some of them are commercial samples while others have been locally synthesised. Experiments have been formed using both on-line and off-line approaches. For the off-line measurements, TL (thermoluminescent) and TSC (thermally stimulated current) techniques have been used.

  1. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  2. Polymer-assisted deposition of metal-oxide films.

    Science.gov (United States)

    Jia, Q X; McCleskey, T M; Burrell, A K; Lin, Y; Collis, G E; Wang, H; Li, A D Q; Foltyn, S R

    2004-08-01

    Metal oxides are emerging as important materials for their versatile properties such as high-temperature superconductivity, ferroelectricity, ferromagnetism, piezoelectricity and semiconductivity. Metal-oxide films are conventionally grown by physical and chemical vapour deposition. However, the high cost of necessary equipment and restriction of coatings on a relatively small area have limited their potential applications. Chemical-solution depositions such as sol-gel are more cost-effective, but many metal oxides cannot be deposited and the control of stoichiometry is not always possible owing to differences in chemical reactivity among the metals. Here we report a novel process to grow metal-oxide films in large areas at low cost using polymer-assisted deposition (PAD), where the polymer controls the viscosity and binds metal ions, resulting in a homogeneous distribution of metal precursors in the solution and the formation of uniform metal-organic films. The latter feature makes it possible to grow simple and complex crack-free epitaxial metal-oxides.

  3. Effects of Processing Variables on Tantalum Nitride by Reactive-Ion-Assisted Magnetron Sputtering Deposition

    Science.gov (United States)

    Wei, Chao‑Tsang; Shieh, Han‑Ping D.

    2006-08-01

    The binary compound tantalum nitride (TaN) and ternary compounds tantalum tungsten nitrides (Ta1-xWxNy) exhibit interesting properties such as high melting point, high hardness, and chemical inertness. Such nitrides were deposited on a tungsten carbide (WC) die and silicon wafers by ion-beam-sputter evaporation of the respective metal under nitrogen ion-assisted deposition (IAD). The effects of N2/Ar flux ratio, post annealing, ion-assisted deposition, deposition rate, and W doping in coating processing variables on hardness, load critical scratching, oxidation resistance, stress and surface roughness were investigated. The optimum N2/Ar flux ratios in view of the hardness and critical load of TaN and Ta1-xWxNy films were ranged from 0.9 to 1.0. Doping W into TaN to form Ta1-xWxNy films led significant increases in hardness, critical load, oxidation resistance, and reduced surface roughness. The optimum doping ratio was [W/(W+Ta)]=0.85. From the deposition rate and IAD experiments, the stress in the films is mainly contributed by sputtering atoms. The lower deposition rate at a high N2/Ar flux ratio resulted in a higher compressive stress. A high compressive residual stress accounts for a high hardness. The relatively high compressive stress was attributed primarily to peening by atoms, ions and electrons during film growth, the Ta1-xWxNy films showed excellent hardness and strength against a high temperature, and sticking phenomena can essentially be avoided through their use. Ta1-xWxNy films showed better performance than the TaN film in terms of mechanical properties and oxidation resistance.

  4. Growth of MoO3 films by oxygen plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Altman, Eric I.; Droubay, Timothy C.; Chambers, Scott A.

    2002-07-22

    The growth of MoO₃ films on SrLaAlO₄(0 0 1), a substrate lattice-matched to b-MoO , by oxygen plasma assisted molecular beam epitaxy was characterized using reflection high-energy electron diffraction (RHEED), X-ray photoelectron spectroscopy, Xray diffraction (XRD), and atomic force and scanning tunneling microscopies (AFM and STM).It was found that the flux of reactive oxygen species to the surface was not high enough to maintain the proper stoichiometry, even at the lowest measurable deposition rates. Therefore, the films were grown by depositing Mo in small increments and then allowing the Mo to oxidize. At 675 K, the films grew epitaxially but in a three-dimensional manner. XRD of films grown under these conditions revealed atetragonal structure that has not been previously observed in bulk MoO₃ samples.

  5. Ion-assisted deposition of moisture-stable hafnium oxide films for ultraviolet applications

    Science.gov (United States)

    Jensen, Traci R.; Warren, John; Johnson,, Robert L., Jr.

    2002-06-01

    A design-of-experiments statistical approach was taken to determine the optimum ion gun operating parameters for the deposition of moisture-stable, low-absorbing hafnium oxide films by ion-assisted electron-beam evaporation. Factors identified as affecting the quality of hafnia films were chamber pressure, deposition rate, ion gun source gas composition, and ion gun current. Both oxygen and argon were used as source gases. High and low levels of the factors were chosen on the basis of our experience with the operating range of the system, and we made a series of 24 runs with all possible combinations of these factors. From a statistical analysis of the data, we find that the best films are obtained with a 1:1 mixture of argon and oxygen, 3-3.5 x 10-4 Torr chamber pressure, 0.3-nm/s deposition rate, and 0.5-A ion gun current. X-ray diffraction measurements show that the ion-assisted films exhibit a partial monoclinic crystalline structure, whereas the unassisted films are amorphous.

  6. Energy deposition studies for the LBNE beam absorber

    CERN Document Server

    Rakhno, Igor L; Tropin, Igor S

    2015-01-01

    Results of detailed Monte Carlo energy deposition studies performed for the LBNE absorber core and the surrounding shielding with the MARS15 code are described. The model of the entire facility, that includes a pion-production target, focusing horns, target chase, decay channel, hadron absorber system -- all with corresponding radiation shielding -- was developed using the recently implemented ROOT-based geometry option in the MARS15 code. This option provides substantial flexibility and automation when developing complex geometry models. Both normal operation and accidental conditions were studied. Various design options were considered, in particular the following: (i) filling the decay pipe with air or helium; (ii) the absorber mask material and shape; (iii) the beam spoiler material and size. Results of detailed thermal calculations with the ANSYS code helped to select the most viable absorber design options.

  7. Atomic layer deposition ultrathin film origami using focused ion beams

    Science.gov (United States)

    Supekar, O. D.; Brown, J. J.; Eigenfeld, N. T.; Gertsch, J. C.; Bright, V. M.

    2016-12-01

    Focused ion beam (FIB) micromachining is a powerful tool for maskless lithography and in recent years FIB has been explored as a tool for strain engineering. Ion beam induced deformation can be utilized as a means for folding freestanding thin films into complex 3D structures. FIB of high energy gallium (Ga+) ions induces stress by generation of dislocations and ion implantation within material layers, which create creases or folds upon mechanical relaxation enabled by motion of the material layers. One limitation on such processing is the ability to fabricate flat freestanding thin film structures. This capability is limited by the residual stresses formed during processing and fabrication of the films, which can result in initial curvature and deformation of films upon release from a sacrificial fabrication layer. This paper demonstrates folding in freestanding ultrathin films (1:1000) by ion-induced stress relaxation. The ultrathin flat structures are fabricated using atomic layer deposition on sacrificial polyimide. We have demonstrated vertical folding with 30 keV Ga+ ions in structures with lateral dimensions varying from 10 to 50 μm.

  8. Dual ion beam deposition of carbon films with diamondlike properties

    Science.gov (United States)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1984-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  9. Laser-assisted deposition of thin C60 films

    DEFF Research Database (Denmark)

    Schou, Jørgen; Canulescu, Stela; Fæster, Søren

    . However, organic materials are usually not well suited for direct laser irradiation, since the organic molecules may suffer from fragmentation by the laser light. We have, therefore, explored the possible fragmentation of organic molecules by attempting to produce thin films of C60 which is a strongly...... bound carbon molecule with a well-defined mass (M = 720 amu) and therefore a good, organic test molecule. C60 fullerene thin films of average thickness of more than 100 nm was produced in vacuum by matrix-assisted pulsed laser evaporation (MAPLE). A 355 nm Nd:YAG laser was directed onto a frozen target...... of the matrix material, anisole, with a concentration of 0.67 wt% C60. At laser fluences below 1.5 J/cm2, a dominant fraction of the film molecules are C60 transferred to the substrate without any fragmentation. High-resolution SEM images of MAPLE deposited films reveal large circular features on the surface...

  10. Electron-beam-induced deposition of platinum at low landing energies

    NARCIS (Netherlands)

    Botman, A.; De Winter, D.A.M.; Mulders, J.J.L.

    2008-01-01

    Electron-beam-induced deposition of platinum from methylcyclopentadienyl-platinum-trimethyl was performed with a focused electron beam at low landing energies, down to 10 eV. The deposition growth rate is maximal at 140 eV, with the process being over ten times more efficient than at 20 kV. No signi

  11. Ion-beam-deposited boron carbide coatings for the extreme ultraviolet.

    Science.gov (United States)

    Blumenstock, G M; Keski-Kuha, R A

    1994-09-01

    The normal-incidence reflectance of ion-beam-deposited boron carbide thin films has been evaluated in the extreme ultraviolet (EUV) spectral region. High-reflectance coatings have been produced with reflectances greater than 30% between 67 and 121.6 nm. This high reflectance makes ion-beam-deposited boron carbide an attractive coating for EUV applications.

  12. Plasma and Ion Assistance in Physical Vapor Deposition: AHistorical Perspective

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2007-02-28

    Deposition of films using plasma or plasma-assist can betraced back surprisingly far, namely to the 18th century for arcs and tothe 19th century for sputtering. However, only since the 1960s thecoatings community considered other processes than evaporation for largescale commercial use. Ion Plating was perhaps the first importantprocess, introducing vapor ionization and substrate bias to generate abeam of ions arriving on the surface of the growing film. Ratherindependently, cathodic arc deposition was established as an energeticcondensation process, first in the former Soviet Union in the 1970s, andin the 1980s in the Western Hemisphere. About a dozen various ion-basedcoating technologies evolved in the last decades, all characterized byspecific plasma or ion generation processes. Gridded and gridless ionsources were taken from space propulsion and applied to thin filmdeposition. Modeling and simulation have helped to make plasma and ionseffects to be reasonably well understood. Yet--due to the complex, oftennon-linear and non-equilibrium nature of plasma and surfaceinteractions--there is still a place for the experience plasma"sourcerer."

  13. Focused electron beam induced deposition of magnetic nanostructures

    Science.gov (United States)

    de Teresa, Jose M.

    2011-03-01

    Nanopatterning strategies of magnetic materials normally rely on standard techniques such as electron-beam lithography using electron-sensitive resists. Focused electron beam induced deposition (FEBID) is currently being investigated as an alternative single-step route to produce functional magnetic nanostructures. Thus, Co-based and Fe-based precursors have been recently investigated for the growth of magnetic nanostructures by FEBID. In the present contribution, I will give an overview of the existing literature on magnetic nanostructures by FEBID and I will focus on the growth of Co nanostructures by FEBID using Co 2 (CO)8 as precursor gas. The Co content in the nanostructures can reach 95%. Magnetotransport experiments indicate that full metallic behaviour is displayed with relatively low residual resistivity and standard anisotropic magnetoresistance (0.8%). The coercive field of nanowires with changing aspect ratio has been determined in nanowires with width down to 150 nm by means of Magneto-optical Kerr Effect and the magnetization reversal has been imaged by means of Magnetic Force Microscopy, Scanning Transmission X-ray Microscopy as well as Lorentz Microscopy experiments. Nano-Hall probes have been grown with remarkable minimum detectable magnetic flux. Noticeably, it has been found that the domain-wall propagation field is lower than the domain-wall nucleation field in L-shaped nanowires, with potential applications in magnetic logic, sensing and storage. The spin polarization of these Co nanodeposits has been determined through Andreev-Reflection experiments in ferromagnetic-superconducting nanocontacts and amounts to 35%. Recent results obtained in Fe-based nanostructures by FEBID using Fe 2 (CO)9 precursor will be also presented. I acknowledge the collaboration in this field with A. Fernandez-Pacheco, R. Cordoba, L. Serrano, S. Sangiao, L.A. Rodriguez, C. Magen, E. Snoeck, L. Morellon, M.R. Ibarra.

  14. Fabrication of complex oxide microstructures by combinatorial chemical beam vapour deposition through stencil masks

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, E. [3D-OXIDES, 70 rue Gustave Eiffel, Saint Genis Pouilly 01630 (France); Sandu, C.S., E-mail: cosmin.sandu@3d-oxides.com [3D-OXIDES, 70 rue Gustave Eiffel, Saint Genis Pouilly 01630 (France); Laboratoire de Céramique, Ecole Polytechnique Fédérale de Lausanne, Station 12, CH-1015 Lausanne (Switzerland); Harada, S.; Benvenuti, G. [3D-OXIDES, 70 rue Gustave Eiffel, Saint Genis Pouilly 01630 (France); Savu, V. [Laboratoire de Microsystèmes 1, Ecole Polytechnique Fédérale de Lausanne, Station 17, CH-1015 Lausanne (Switzerland); Muralt, P. [Laboratoire de Céramique, Ecole Polytechnique Fédérale de Lausanne, Station 12, CH-1015 Lausanne (Switzerland)

    2015-07-01

    Chemical Beam Vapour Deposition is a gas phase deposition technique, operated under high vacuum conditions, in which evaporated chemical precursors are thermally decomposed on heated substrates to form a film. In the particular equipment used in this work, different chemical beams effuse from a plurality of punctual precursor sources with line of sight trajectory to the substrate. A shadow mask is used to produce 3D-structures in a single step, replicating the apertures of a stencil as deposits on the substrate. The small gap introduced between substrate and mask induces a temperature difference between both surfaces and is used to deposit selectively solely on the substrate without modifying the mask, taking advantage of the deposition rate dependency on temperature. This small gap also enables the deposition of complex patterned structures resulting from the superposition of many patterns obtained using several precursor beams from different directions through a single mask aperture. A suitable process parameter window for precursor flow and substrate temperature is evidenced to maximize resolution. - Highlights: • Micro-feature growth with stencil mask by Chemical Beam Vapour Deposition • Growth of complex structured oxide films in one step • The gap between substrate and mask avoids deposition on the stencil. • Fabrication of 3D structures by superposing deposits from several beams • The versatile setup combines few chemical beams, variable geometry and stencil mask patterns.

  15. Hemocompatibility of DLC coatings synthesized by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    LI; Dejun

    2001-01-01

    [1]Gallagher, J. J., Simpson, J. A., Search for trapped electrons and a magnetic moment at Mars by Mariner IV, Science, 1965, 149: 1233—1239.[2]Russell, C. T., The magnetic field of Mars: Mars 3 evidence reexamined, Geophys. Res. Lett., 1978, 5: 81—86.[3]Riedler, W., Schwingenschun, K., Lichtenegger, H. et al., Interaction of solar wind with the planet Mars: Phobos 2 magnetic field observations, Planet. Space Sci., 1991, 39: 75—81.[4]Gringauz, K. I., What was known about the Martian magnetosphere before Phobos-2 mission, Planet. Space Sci., 1991, 39: 73—74.[5]Acuna, M. H., Connerney, J. E. P., Wasilewski, P. et al., Magnetic field and plasma observations at Mars: Initial results of the Mars global surveyor mission, Science, 1998, 279: 1676—1680.[6]Mohlmann, D., Riedler. W., Rustenbuch, J. et al., The question of an internal Martian magnetic field, Planet. Space Sci., 1991, 39: 83—88.[7]Shi, J. K., Liu, Z. X., Zhang, T. L., A theoretical study on the O+ ions of the Martian magnetosphere, Chin Astron Astrophys., 1999, 23: 377—383.[8]Rosenbauer, H., Shutte, N., Apathy, I. et al., Ions of Martian origin and plasma sheet in the Martian magnetotail: Initial results of TAUS experiment, Nature, 1989, 341: 612—614.[9]Lundin, R., Zakharov, A., Pelinen, R. et al., ASPERA/Phobos measurements of the ion outflow from the Martian ionosphere, Geophy. Res. Lett., 1990, 17: 873—876.[10]Verigin, M. I., Shutte, N. M., Galeev, A. A. et al., Ions of planetary origin in the Martian magnetosphere (Phobos 2 / TAUS experiment), Planet. Space Sci., 1991, 39: 131—137.[11]Lundin, R., Zakharov, A., Pelinen, R. et al., First measurements of the ionospheric plasma escape from Mars, Nature, 1989, 341: 609—612.[12]Lammer, H., Bauer, S. J., Nonthermal atmospheric escape from Mars and Titan, J. Geophys. Res., 1991, 96: 1819—1826.[13]Haider, S. A., O+ escape in the polar ion exosphere of Mars, Adv. Space Res., 1995, 16: 49—55.[14]Shi. J. K., Liu, Z. X., Zhang, T. L. et al., The influence of the intrinsic magnetic field on the distribution of O+ in Martian magnetosphere, Chinese Science Bulletin (in Chinese), 1997, 42(23): 1898—1901.[15]Luhmann, J. G., Brace, L. H., Near-Mars space, Rev. Geophys., 1991, 29: 121—140.[16]Luhmann, J. G., Schwingenschuh, K., A model of the magnetic ion environment of Mars, J. Geophys. Res., 1990, 95: 939—945.[17]Slavin, J. A., Schwingenschuh, K., Reidler, W. et al., The solar wind interaction with Mars: Mariner-4, Mars-2,3,5, and Phobos-2 observation of bow shock position and shape, J. Geophys. Res., 1991, 96: 11235—11241.[18]Eviater, A., Lencheek, A. M., Singer, S. F., Distribution of density in an ion-exosphere of a nonrotating planet, Phys. Fluids, 1964, 7: 1775—1779.

  16. New ion-assisted filtered cathodic arc deposition (IFCAD) technology for producing advanced thin films on temperature-sensitive substrates

    Science.gov (United States)

    Fulton, Michael L.

    1999-10-01

    An innovative Ion-Assisted Filtered Cathodic Arc Deposition (IFCAD) system has been developed for low temperature production of thin-film coatings. The IFCAD system employs electro-magnetic and mechanical filtering techniques to remove unwanted macroparticles and neutral atoms from the plasma stream. Therefore, only ions within a defined energy range arrive at the substrate surface, depositing thin-films with excellent mechanical and optical properties. Ion- Assisted-Deposition is coupled with Filtered Cathodic Arc technology to enhance and modify the arc deposited thin- films. Using an advanced computer controlled plasma beam scanning system, high quality, large area, uniform IFCAD multi-layer film structures are attained. Amorphous Diamond- Like-Carbon films (up to 85% sp3 bonded carbon; and micro- hardness greater than 50 GPa) have been deposited in multi- layer thin-film combinations with other IFCAD source materials (such as: Al2O3) for optical and tribological applications. Rutile TiO2 (refractive index of 2.8 at 500 nm) has been deposited with this technology for advanced optical filter applications. The new IFCAD technology has been included in development programs, such as: plastic and glass lens coatings for optical systems; wear resistant coatings on various metal substrates, ultra smooth, durable, surface hydrophobic coatings for aircraft windows; EUV coatings for space instrumentation; transparent conductive coatings; and UV protective coatings for solar cell concentrator plastic Fresnel lens elements for space power.

  17. Heavy-Ion Irradiation of Thulium(III) Oxide Targets Prepared by Polymer-Assisted Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, Mitch A.; Ali, Mazhar N.; Chang, Noel N.; Parsons-Moss, Tashi; Ashby, Paul D.; Gates, Jacklyn M.; Stavsetra, Liv; Gregorich, Kenneth E.; Nitsche, Heino

    2008-09-15

    Thulium(III) oxide (Tm{sub 2}O{sub 3}) targets prepared by the polymer-assisted deposition (PAD) method were irradiated by heavy-ion beams to test the method's feasibility for nuclear science applications. Targets were prepared on silicon nitride backings (thickness of 1000 nm, 344 {micro}g/cm{sup 2}) and were irradiated with an {sup 40}Ar beam at laboratory frame energy of {approx}210 MeV (50 particle nA). The root mean squared (RMS) roughness prior to irradiation is 1.1 nm for a {approx}250 nm ({approx}220 {micro}g/cm{sup 2}) Tm{sub 2}O{sub 3} target, and an RMS roughness of 2.0 nm after irradiation was measured by atomic force microscopy (AFM). Scanning electron microscopy of the irradiated target reveals no significant differences in surface homogeneity when compared to imaging prior to irradiation. Target flaking was not observed from monitoring Rutherford scattered particles as a function of time.

  18. Nanopillar growth by focused helium ion-beam-induced deposition

    NARCIS (Netherlands)

    Chen, P.; Veldhoven, E. van; Sanford, C.A.; Salemink, H.W.M.; Maas, D.J.; Smith, D.A.; Rack, P.D.; Alkemade, P.F.A.

    2010-01-01

    A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH3) 3Pt(CPCH3) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that el

  19. Pulsed Helium Ion Beam Induced Deposition: A Means to High Growth Rates

    Energy Technology Data Exchange (ETDEWEB)

    Alkemade, Paul F. A. [Delft University of Technology, Delft, Netherlands; Miro, Hozanna [Delft University of Technology, Delft, Netherlands; Van Veldhoven, Emile [TNO Van Leeuwenhoek Laboratory; Maas, Diederick [TNO Van Leeuwenhoek Laboratory; Smith, Daryl [University of Tennessee, Knoxville (UTK); Rack, P. D. [University of Tennessee, Knoxville (UTK)

    2011-01-01

    The sub-nanometer beam of a helium ion microscope was used to study and optimize helium-ion beam induced deposition of PtC nanopillars with the (CH{sub 3}){sub 3}Pt(CPCH{sub 3}) precursor. The beam current, beam dwell time, precursor refresh time, and beam focus have been independently varied. Continuous beam exposure resulted in narrow but short pillars, while pulsed exposure resulted in thinner and higher ones. Furthermore, at short dwell times the deposition efficiency was very high, especially for a defocused beam. Efficiencies were measured up to 20 times the value for continuous exposure conditions. The interpretation of the experimental data was aided by a Monte Carlo simulation of the deposition. The results indicate that two regimes are operational in ion beam induced deposition (IBID). In the first one, the adsorbed precursor molecules originally present in the beam interaction region decompose. After the original precursor layer is consumed, further depletion is averted and growth continues by the supply of molecules via adsorption and surface diffusion. Depletion around the beam impact site can be distinguished from depletion on the flanges of the growing pillars. The Monte Carlo simulations for low precursor surface coverage reproduce measured growth rates, but predict considerably narrower pillars, especially at short dwell times. Both the experiments and the simulations show that the pillar width rapidly increases with increasing beam diameter. Optimal writing strategy, good beam focusing, and rapid beam positioning are needed for efficient and precise fabrication of extended and complex nanostructures by He-IBID.

  20. Laser controlled deposition of metal microstructures via nondiffracting Bessel beam illumination

    Science.gov (United States)

    Drampyan, Rafael; Leonov, Nikita; Vartanyan, Tigran

    2016-04-01

    The technique of the laser controlled deposition of sodium and rubidium deposits on the sapphire substrate is presented. The metals were deposited on the clean sapphire substrate from the vapor phase contained in the evacuated and sealed cell. We use an axicon to produce a non-diffracting Bessel beam out of the beam got from the cw diode laser with 200 mW power at the wavelength of 532 nm. After 30 minutes of the laser-controlled deposition the substrates were examined in the optical microscope. The obtained metal deposits form the sharp-cut circles with the pitch of 10 μm, coincident with the tens of dark rings of the Bessel beam. Reduction of the laser power leads to the build up of the continuous metal film over the whole substrate.

  1. Crystalline inverted membranes grown on surfaces by electrospray ion beam deposition in vacuum.

    Science.gov (United States)

    Rauschenbach, Stephan; Rinke, Gordon; Malinowski, Nikola; Weitz, R Thomas; Dinnebier, Robert; Thontasen, Nicha; Deng, Zhitao; Lutz, Theresa; de Almeida Rollo, Pedro Martins; Costantini, Giovanni; Harnau, Ludger; Kern, Klaus

    2012-05-22

    Crystalline inverted membranes of the nonvolatile surfactant sodium dodecylsulfate are found on solid surfaces after electrospray ion beam deposition (ES-IBD) of large SDS clusters in vacuum. This demonstrates the equivalence of ES-IBD to conventional molecular beam epitaxy.

  2. Structural and electrical properties of electric field assisted spray deposited pea structured ZnO film

    Science.gov (United States)

    Chaturvedi, Neha; Swami, Sanjay Kumar; Dutta, Viresh

    2016-05-01

    Spray deposition of ZnO film was carried out. The uneven growth of ZnO nanostructures is resulted for spray deposited ZnO film. Application of DC voltage (1000V) during spray deposition provides formation of pea like structures with uniform coverage over the substrate. Electric field assisted spray deposition provides increased crystallinity with reduced resistivity and improved mobility of the ZnO film as compared to spray deposited ZnO film without electric field. This with large area deposition makes the process more efficient than other techniques.

  3. Resonant Infrared Matrix Assisted Pulsed Laser Deposition of Polymers: Improving the Morphology of As-Deposited Films

    Science.gov (United States)

    Bubb, Daniel; Papantonakis, Michael; Collins, Brian; Brookes, Elijah; Wood, Joshua; Gurudas, Ullas

    2008-03-01

    Resonant infrared matrix assisted pulsed laser deposition has been used to deposit thin films of PMMA, a widely used industrial polymer. This technique is similar to conventional pulsed laser deposition, except that the polymer to be deposited is dissolved in a solvent and the solution is frozen before ablation in a vacuum chamber. The laser wavelength is absorbed by a vibrational band in the frozen matrix. The polymer lands on the substrate to form a film, while the solvent is pumped away. Our preliminary results show that the surface roughness of the as-deposited films depends strongly on the differential solubility radius, as defined by Hansen solubility parameters of the solvent and the solubility radius of the polymer. Our results will be compared with computational and experimental studies of the same polymer using a KrF (248 nm) laser. The ejection mechanism will be discussed as well as the implications of these results for the deposition of smooth high quality films.

  4. Roles of secondary electrons and sputtered atoms in ion-beam-induced deposition

    NARCIS (Netherlands)

    Chen, P.; Salemink, H.W.M.; Alkemade, P.F.A.

    2009-01-01

    The authors report the results of investigating two models for ion-beam-induced deposition (IBID). These models describe IBID in terms of the impact of secondary electrons and of sputtered atoms, respectively. The yields of deposition, sputtering, and secondary electron emission, as well as the ener

  5. Arbitrarily shaped Si nanostructures by glancing angle ion beam sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Patzig, Christian; Miessler, Andre [Leibniz-Institut fuer Oberflaechenmodifizierung e.V. (IOM), Permoserstrasse 15, 04318 Leipzig (Germany); Karabacak, Tansel [University of Arkansas at Little Rock, 2801 South University Avenue, Little Rock, AR 72204 (United States); Rauschenbach, Bernd [Leibniz-Institut fuer Oberflaechenmodifizierung e.V. (IOM), Permoserstrasse 15, 04318 Leipzig (Germany); Universitaet Leipzig, Institut fuer Experimentalphysik II, Linnestrasse 5, 04103 Leipzig (Germany)

    2010-06-15

    Using glancing angle deposition by ion beam sputtering, sculptured thin films (STFs) consisting of various Si nanostructures of manyfold shapes, such as inclined and vertical columns, screws, and spirals, were deposited on Si substrates. It will be shown that morphology, shape, and diameter of the structures are influenced and can thus be controlled by adjusting various deposition parameters, including substrate temperature and ratio of substrate rotational speed to film deposition rate. Especially the temperature-controlled surface diffusion is found to play an important role in the growth of STFs. Cross-sectional scanning electron microscopy micrograph of helical Si nanostructures, deposited with ion beam sputter glancing angle deposition. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  6. Lateral resolution in focused electron beam-induced deposition: scaling laws for pulsed and static exposure

    Energy Technology Data Exchange (ETDEWEB)

    Szkudlarek, Aleksandra [Empa, Laboratory for Mechanics of Materials and Nanostructures, Thun (Switzerland); AGH University of Science and Technology, Department of Solid State Physics, Faculty of Physics and Applied Computer Science, Krakow (Poland); Szmyt, Wojciech; Kapusta, Czeslaw [AGH University of Science and Technology, Department of Solid State Physics, Faculty of Physics and Applied Computer Science, Krakow (Poland); Utke, Ivo [Empa, Laboratory for Mechanics of Materials and Nanostructures, Thun (Switzerland)

    2014-12-15

    In this work, we review the single-adsorbate time-dependent continuum model for focused electron beam-induced deposition (FEBID). The differential equation for the adsorption rate will be expressed by dimensionless parameters describing the contributions of adsorption, desorption, dissociation, and the surface diffusion of the precursor adsorbates. The contributions are individually presented in order to elucidate their influence during variations in the electron beam exposure time. The findings are condensed into three new scaling laws for pulsed exposure FEBID (or FEB-induced etching) relating the lateral resolution of deposits or etch pits to surface diffusion and electron beam exposure dwell time for a given adsorbate depletion state. (orig.)

  7. Simulation calculation for the energy deposition profile and the transmission fraction of intense pulsed electron beam at various incident angles

    CERN Document Server

    Yang Hai Liang; Zhang Jia Sheng; Huang Jian Jun; Sun Jian Feng

    2002-01-01

    The incident angles have a heavy effect on the intense pulsed electron beam energy deposition profile, energy deposition fraction and beam current transmission fraction in material. The author presents electron beam energy deposition profile and energy deposition fraction versus electron energy (0.5-2.0 MeV), at various incident angles for three aluminum targets of various thickness via theoretical calculation. The intense pulsed electron beam current transmission fractions versus electron energy (0.4-1.4 MeV) at various incident angles for three thickness of carbon targets were also theoretically calculated. The calculation results indicate that the deposition energy in unit mass of material surface layer increase with the rise of electron beam incident angle, and electron beam with low incident angle (closer to normal incident angle) penetrates deeper into the target material. The electron beams deposit more energy in unit mass of material surface layer at 60 degree-70 degree incident angle

  8. Beam-induced energy deposition issues in the Very Large Hadron Collider

    CERN Document Server

    Mokhov, N V; Foster, G W

    2001-01-01

    Energy deposition issues are extremely important in the Very Large Hadron Collider (VLHC) with huge energy stored in its 20 TeV (Stage-1) and 87.5 TeV (Stage-2) beams. The status of the VLHC design on these topics, and possible solutions of the problems are discussed. Protective measures are determined based on the operational and accidental beam loss limits for the prompt radiation dose at the surface, residual radiation dose, ground water activation, accelerator components radiation damage and quench stability. The beam abort and beam collimation systems are designed to protect accelerator from accidental and operational beam losses, IP region quadrupoles from irradiation by the products of beam-beam collisions, and to reduce the accelerator-induced backgrounds in the detectors. (7 refs).

  9. The characteristics of arc beam shaping in hybrid plasma and laser deposition manufacturing

    Institute of Scientific and Technical Information of China (English)

    ZHANG; Hai'ou; QIAN; Yingping; WANG; Guilan; ZHENG; Qiguang

    2006-01-01

    As a new direct metal prototyping technology,the hybrid plasma and laser deposition manufacturing (PLDM) is proposed in this paper. In order to figure out the characteristics of plasma arc beam and mould in the PLDM process of high temperature alloy, the high speed CCD camera is used to obtain the picture around the plasma arc. Afterwards the sketch of picture is clearly obtained. And the effect of laser parameter, such as average power, pulse width, pulse repetition frequency and the angle between laser beam and plasma arc beam on the plasma arc appearance, is studied experimentally. The results show that the modality of plasma arc beam is markedly influenced by laser beam. And the improvements of shape precision and surface state of the layer deposited by PLDM are confirmed.

  10. First Demonstration of Laser-Assisted Charge Exchange for Microsecond Duration H- Beams

    Science.gov (United States)

    Cousineau, Sarah; Rakhman, Abdurahim; Kay, Martin; Aleksandrov, Alexander; Danilov, Viatcheslav; Gorlov, Timofey; Liu, Yun; Plum, Michael; Shishlo, Andrei; Johnson, David

    2017-02-01

    This Letter reports on the first demonstration of laser-assisted H- charge exchange for microsecond duration H- beam pulses. Laser-assisted charge exchange injection is a breakthrough technology that overcomes long-standing limitations associated with the traditional method of producing high intensity, time structured beams of protons in accelerators via the use of carbon foils for charge exchange injection. The central theme of this experiment is the demonstration of novel techniques that reduce the laser power requirement to allow high efficiency stripping of microsecond duration beams with commercial laser technology.

  11. Beam Interaction with Thin Materials: Heat Deposition, Cooling Phenomena and Damage Limits

    CERN Document Server

    Sapinski, M

    2012-01-01

    Thin targets, inserted into particle beams can serve various purposes, starting from beam emittance measurements like in wire scanner or scintillating screens up to beam content modifications like in case of stripper foils. The mechanisms of energy deposition in a thin target for various beam types are discussed, together with properties of particles produced in this kind of interaction. The cooldown processes, from heat transfer up to cooling by sublimation, and their efficiencies are presented. Finally, damage conditions are discussed and conclusions about typical damage limits are drawn. The experiments performed with the wire scanners at CERN accelerators and a mathematical model of heating and cooling of a wire are presented.

  12. Effect of ion-assisted deposition on optical properties of thin films

    Science.gov (United States)

    Tang, Xuefei; Fan, Zhengxiu

    1990-12-01

    Effects of ion assisted deposition on the propertes of Ti02, Zr02 and 5102 optical coatings were investigated. Substrates were bombarded with different ions--- oxygen ions , argon ions , and the mixture ions of oxygen-argon during deposition. The refractive indices, optical absorptions and laser-induced damage thresholds (LIDT) measurments of these films are reported.

  13. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    Directory of Open Access Journals (Sweden)

    Brett B. Lewis

    2015-04-01

    Full Text Available Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IVMe3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.

  14. Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing

    Energy Technology Data Exchange (ETDEWEB)

    Abedrabbo, S., E-mail: sxa0215@yahoo.com [Department of Physics, University of Jordan, Amman 11942 (Jordan); Mohammed, Q. [Tadawul Shares and Bonds Mediation L.L.C., Dubai (United Arab Emirates); Fiory, A.T. [Department of Physics, New Jersey Institute of Technology, Newark, NJ 07901 (United States)

    2009-02-01

    Techniques of film deposition by co-evaporation, ion-beam assisted mixing, oxygen ion implantation, and thermal annealing were been combined in a novel way to study processing of erbium-in-silicon thin-film materials for optoelectronics applications. Structures with erbium concentrations above atomic solubility in silicon and below that of silicide compounds were prepared by vacuum co-evaporation from two elemental sources to deposit 200-270 nm films on crystalline silicon substrates. Ar{sup +} ions were implanted at 300 keV. Oxygen was incorporated by O{sup +}-ion implantation at 130 keV. Samples were annealed at 600 deg. C in vacuum. Concentration profiles of the constituent elements were obtained by Rutherford backscattering spectrometry. Results show that diffusion induced by ion-beam mixing and activated by thermal annealing depends on the deposited Si-Er profile and reaction with implanted oxygen. Room temperature photoluminescence spectra show Er{sup 3+} transitions in a 1480-1550 nm band and integrated intensities that increase with the oxygen-to-erbium ratio.

  15. Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Comes, Ryan; Liu Hongxue; Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Gu, Man [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Khokhlov, Mikhail; Wolf, Stuart A. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Guilford College, Greensboro, North Carolina 27410 (United States)

    2013-01-14

    Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

  16. Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

    Science.gov (United States)

    Comes, Ryan; Gu, Man; Khokhlov, Mikhail; Liu, Hongxue; Lu, Jiwei; Wolf, Stuart A.

    2013-01-01

    Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

  17. Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films

    NARCIS (Netherlands)

    Jinesh, K. B.; van Hemmen, J. L.; M. C. M. van de Sanden,; Roozeboom, F.; Klootwijk, J. H.; Besling, W. F. A.; Kessels, W. M. M.

    2011-01-01

    A comparative electrical characterization study of aluminum oxide (Al2O3) deposited by thermal and plasma-assisted atomic layer depositions (ALDs) in a single reactor is presented. Capacitance and leakage current measurements show that the Al2O3 deposited by the plasma-assisted ALD shows excellent d

  18. Energy deposition of heavy ions in the regime of strong beam-plasma correlations.

    Science.gov (United States)

    Gericke, D O; Schlanges, M

    2003-03-01

    The energy loss of highly charged ions in dense plasmas is investigated. The applied model includes strong beam-plasma correlation via a quantum T-matrix treatment of the cross sections. Dynamic screening effects are modeled by using a Debye-like potential with a velocity dependent screening length that guarantees the known low and high beam velocity limits. It is shown that this phenomenological model is in good agreement with simulation data up to very high beam-plasma coupling. An analysis of the stopping process shows considerably longer ranges and a less localized energy deposition if strong coupling is treated properly.

  19. Aerosol assisted depositions of polymers using an atomiser delivery system.

    Science.gov (United States)

    Crick, Colin R; Clausen-Thue, Victoria; Parkin, Ivan P

    2011-09-01

    The hydrophobicity, robustness and anti-microbial properties of Sylgard 184 polymer films deposited via AACVD were optimised by using aerosol droplets from an atomiser delivery system, polymer coating substrates and the swell encapsulation of methylene blue. By using an atomiser deposition system (average droplet size 0.35 microm) rather than a misting aerosol system (45 microm) lead to a surface with smaller surface features, which improved hydrophobicity (water contact angle 165 degrees) in addition to increasing the films transparency from ca 10 to 65%. Pre-treating the substrates with the same Sylgard 184 elastomer lead to a highly consistent surface hydrophobicity and an increase in average water contact angle measured (169 degrees). This paper shows the first example of dye incorporation in a CVD derived polymer film-these films have potential as antimicrobial surfaces.

  20. A prototype of a beam steering assistant tool for accelerator operations

    Energy Technology Data Exchange (ETDEWEB)

    M. Bickley; P. Chevtsov

    2006-10-24

    The CEBAF accelerator provides nuclear physics experiments at Jefferson Lab with high quality electron beams. Three experimental end stations can simultaneously receive the beams with different energies and intensities. For each operational mode, the accelerator setup procedures are complicated and require very careful checking of beam spot sizes and positions on multiple beam viewers. To simplify these procedures and make them reproducible, a beam steering assistant GUI tool has been created. The tool is implemented as a multi-window control screen. The screen has an interactive graphical object window, which is an overlay on top of a digitized live video image from a beam viewer. It allows a user to easily create and edit any graphical objects consisting of text, ellipses, and lines, right above the live beam viewer image and then save them in a file that is called a beam steering template. The template can show, for example, the area within which the beam must always be on the viewer. Later, this template can be loaded in the interactive graphical object window to help accelerator operators steer the beam to the specified area on the viewer.

  1. Three-dimensional Nanostructures Fabricated by Ion-Beam-Induced Deposition

    NARCIS (Netherlands)

    Chen, P.

    2010-01-01

    The direct writing technology known as ion-beam-induced deposition (IBID) has been attracting attention mainly because of its high degree of flexibility of locally prototyping three-dimensional (3D) nanostructures. These high-resolution nanostructures have various research applications. However, no

  2. Investigation of morphological changes in platinum-containing nanostructures created by electron-beam-induced deposition

    NARCIS (Netherlands)

    Botman, A.; Hesselberth, M.; Mulders, J.J.L.

    2008-01-01

    Focused electron-beam-induced deposition (EBID) allows the rapid fabrication of three-dimensional nanodevices and metallic wiring of nanostructures, and is a promising technique for many applications in nanoresearch. The authors present two topics on platinum-containing nanostructures created by EBI

  3. Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective

    NARCIS (Netherlands)

    Botman, A.; Mulders, J.J.L.; Hagen, C.W.

    2009-01-01

    The creation of functional nanostructures by electron-beam-induced deposition (EBID) is becoming more widespread. The benefits of the technology include fast ‘point-and-shoot’ creation of three-dimensional nanostructures at predefined locations directly within a scanning electron microscope. One sig

  4. Charging effects during focused electron beam induced deposition of silicon oxide

    NARCIS (Netherlands)

    de Boer, Sanne K.; van Dorp, Willem F.; De Hosson, Jeff Th. M.

    2011-01-01

    This paper concentrates on focused electron beam induced deposition of silicon oxide. Silicon oxide pillars are written using 2, 4, 6, 8, 10-pentamethyl-cyclopenta-siloxane (PMCPS) as precursor. It is observed that branching of the pillar occurs above a minimum pillar height. The branching is attrib

  5. The role of electron-stimulated desorption in focused electron beam induced deposition

    NARCIS (Netherlands)

    van Dorp, Willem F.; Hansen, Thomas W.; Wagner, Jakob B.; De Hosson, Jeff T. M.

    2013-01-01

    We present the results of our study about the deposition rate of focused electron beam induced processing (FEBIP) as a function of the substrate temperature with the substrate being an electron-transparent amorphous carbon membrane. When W(CO)(6) is used as a precursor it is observed that the growth

  6. Synthesis of photocatalytic TiO2 nano-coatings by supersonic cluster beam deposition

    NARCIS (Netherlands)

    Fraters, B.D.; Cavaliere, E; Mul, G.; Gavioli, L.

    2014-01-01

    In this paper we report on the photocatalytic behavior in gas phase propane oxidation of well-defined TiO2 nanoparticle (NP) coatings prepared via Supersonic Cluster Beam Deposition (SCBD) on Si-wafers and quartz substrates. The temperature dependent crystal phase of the coatings was analyzed by Ram

  7. A comparison of neon versus helium ion beam induced deposition via Monte Carlo simulations.

    Science.gov (United States)

    Timilsina, Rajendra; Smith, Daryl A; Rack, Philip D

    2013-03-22

    The ion beam induced nanoscale synthesis of PtCx (where x ∼ 5) using the trimethyl (methylcyclopentadienyl)platinum(IV) (MeCpPt(IV)Me3) precursor is investigated by performing Monte Carlo simulations of helium and neon ions. The helium beam leads to more lateral growth relative to the neon beam because of its larger interaction volume. The lateral growth of the nanopillars is dominated by molecules deposited via secondary electrons in both the simulations. Notably, the helium pillars are dominated by SE-I electrons whereas the neon pillars are dominated by SE-II electrons. Using a low precursor residence time of 70 μs, resulting in an equilibrium coverage of ∼4%, the neon simulation has a lower deposition efficiency (3.5%) compared to that of the helium simulation (6.5%). At larger residence time (10 ms) and consequently larger equilibrium coverage (85%) the deposition efficiencies of helium and neon increased to 49% and 21%, respectively; which is dominated by increased lateral growth rates leading to broader pillars. The nanoscale growth is further studied by varying the ion beam diameter at 10 ms precursor residence time. The study shows that total SE yield decreases with increasing beam diameters for both the ion types. However, helium has the larger SE yield as compared to that of neon in both the low and high precursor residence time, and thus pillars are wider in all the simulations studied.

  8. Texture-Induced Anisotropy in an Inconel 718 Alloy Deposited Using Electron Beam Freeform Fabrication

    Science.gov (United States)

    Tayon, W.; Shenoy, R.; Bird, R.; Hafley, R.; Redding, M.

    2014-01-01

    A test block of Inconel (IN) 718 was fabricated using electron beam freeform fabrication (EBF(sup 3)) to examine how the EBF(sup 3) deposition process affects the microstructure, crystallographic texture, and mechanical properties of IN 718. Tests revealed significant anisotropy in the elastic modulus for the as-deposited IN 718. Subsequent tests were conducted on specimens subjected to a heat treatment designed to decrease the level of anisotropy. Electron backscatter diffraction (EBSD) was used to characterize crystallographic texture in the as-deposited and heat treated conditions. The anisotropy in the as-deposited condition was strongly affected by texture as evidenced by its dependence on orientation relative to the deposition direction. Heat treatment resulted in a significant improvement in modulus of the EBF(sup 3) product to a level nearly equivalent to that for wrought IN 718 with reduced anisotropy; reduction in texture through recrystallization; and production of a more homogeneous microstructure.

  9. Thermal imaging for assessment of electron-beam freeform fabrication (EBF3) additive manufacturing deposits

    Science.gov (United States)

    Zalameda, Joseph N.; Burke, Eric R.; Hafley, Robert A.; Taminger, Karen M.; Domack, Christopher S.; Brewer, Amy; Martin, Richard E.

    2013-05-01

    Additive manufacturing is a rapidly growing field where 3-dimensional parts can be produced layer by layer. NASA's electron beam freeform fabrication (EBF3) technology is being evaluated to manufacture metallic parts in a space environment. The benefits of EBF3 technology are weight savings to support space missions, rapid prototyping in a zero gravity environment, and improved vehicle readiness. The EBF3 system is composed of 3 main components: electron beam gun, multi-axis position system, and metallic wire feeder. The electron beam is used to melt the wire and the multi-axis positioning system is used to build the part layer by layer. To insure a quality deposit, a near infrared (NIR) camera is used to image the melt pool and solidification areas. This paper describes the calibration and application of a NIR camera for temperature measurement. In addition, image processing techniques are presented for deposit assessment metrics.

  10. Tribological properties of boron nitride synthesized by ion beam deposition

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.; Spalvins, T.

    1985-01-01

    The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

  11. Purity and resistivity improvements for electron-beam-induced deposition of Pt

    Energy Technology Data Exchange (ETDEWEB)

    Mulders, J.J.L. [FEI Company, Eindhoven (Netherlands)

    2014-12-15

    Electron-beam-induced deposition (EBID) of platinum is used by many researchers. Its main application is the formation of a protective layer and the ''welding material'' for making a TEM lamella with a focused ion beam thinning process. For this application, the actual composition of the deposition is less relevant, and in practice, both the mechanical strength and the conductivity are sufficient. Another important application is the creation of an electrical connection to nanoscale structures such as nano-wires and graphene. To serve as an electrical contact, the resistivity of the Pt deposited structure has to be sufficiently low. Using the commonly used precursor MeCpPtMe{sub 3} for deposition, the resistivity as created by the basic process is 10{sup +5}-10{sup +6} higher than the value for bulk Pt, which is 10.6 μΩ cm. The reason for this is the high abundance of carbon in the deposition. To improve the deposition process, much attention has been given by the research community to parameter optimization, to ex situ or in situ removal of carbon by anneal steps, to prevention of carbon deposition by use of a carbon-free precursor, to electron beam irradiation under a high flux of oxygen and to the combination with other techniques such as atomic layer deposition (ALD). In the latter technique, the EBID structures are used as a 1-nm-thick seed layer only, while the ALD is used to selectively add pure Pt. These techniques have resulted in a low resistivity, today approaching the 10-150 μΩ cm, while the size and shape of the structure are preserved. Therefore, now, the technique is ready for application in the field of contacting nano-wires. (orig.)

  12. Functional porphyrin thin films deposited by matrix assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Atomistilor 409, Bucharest-Magurele (Romania); Popescu, C.; Popescu, A.C.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Atomistilor 409, Bucharest-Magurele (Romania); Ciucu, A.A. [Univeristy of Bucharest, Chemistry Department, Bucharest (Romania); Andronie, A.; Iordache, S.; Stamatin, I. [University of Bucharest, 3 Nano-SAE Research Center, P.O. Box MG-38, Bucharest-Magurele (Romania); Fagadar-Cosma, E. [Institute of Chemistry Timisoara of Romanian Academy, Department of Organic Chemistry, 300223 Timisoara (Romania); Chrisey, D.B. [Rensselaer Polytechnic Institute, School of Engineering, Department of Materials Science and Engineering, Troy 12180-3590, NY (United States)

    2010-05-25

    We report the first successful deposition of functionalized and nanostructured Zn(II)- and Co(II)-metalloporphyrin thin films by matrix assisted pulsed laser evaporation onto silicon wafers, quartz plates and screen-printed electrodes. The deposited nanostructures have been characterized by Raman spectrometry and cyclic voltammetry. The novelty of our contribution consists of the evaluation of the sensitivity of the MAPLE-deposited Zn(II)- and Co(II)-metalloporphyrin thin films on screen-printed carbon nanotube electrodes when challenged with dopamine.

  13. Fe:O:C grown by focused-electron-beam-induced deposition: magnetic and electric properties

    Energy Technology Data Exchange (ETDEWEB)

    Lavrijsen, R; Schoenaker, F J; Ellis, T H; Barcones, B; Kohlhepp, J T; Swagten, H J M; Koopmans, B [Department of Applied Physics, Center for NanoMaterials and COBRA Research Institute, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Cordoba, R; Ibarra, M R [Instituto de Nanociencia de Aragon, Universidad de Zaragoza, E-50009 Zaragoza (Spain); De Teresa, J M; Magen, C [Departamento de Fisica de la Materia Condensada, Universidad de Zaragoza, E-50009 Zaragoza (Spain); Trompenaars, P; Mulders, J J L, E-mail: r.lavrijsen@tue.nl, E-mail: deteresa@unizar.es [FEI Electron Optics, Achtseweg Noord 5, 5651 GG Eindhoven (Netherlands)

    2011-01-14

    We systematically study the effect of oxygen content on the magneto-transport and microstructure of Fe:O:C nanowires deposited by focused-electron-beam-induced (FEBID) deposition. The Fe/O ratio can be varied with an Fe content varying between {approx} 50 and 80 at.% with overall low C content ({approx}16 {+-} 3 at.%) by adding H{sub 2}O during the deposition while keeping the beam parameters constant as measured by energy dispersive x-ray (EDX) spectroscopy. The room-temperature magnetic properties for deposits with an Fe content of 66-71 at.% are investigated using the magneto-optical Kerr effect (MOKE) and electric magneto-transport measurements. The nanostructure of the deposits is investigated through cross-sectional high-resolution transmission electron microscopy (HRTEM) imaging, allowing us to link the observed magneto-resistance and resistivity to the transport mechanism in the deposits. These results demonstrate that functional magnetic nanostructures can be created, paving the way for new magnetic or even spintronics devices.

  14. Kinetic study on hot-wire-assisted atomic layer deposition of nickel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Guangjie, E-mail: ygjhzh@dpe.mm.t.u-tokyo.ac.jp; Shimizu, Hideharu; Momose, Takeshi; Shimogaki, Yukihiro [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-01-15

    High-purity Ni films were deposited using hot-wire-assisted atomic layer deposition (HW-ALD) at deposition temperatures of 175, 250, and 350 °C. Negligible amount of nitrogen or carbon contamination was detected, even though the authors used NH{sub 2} radical as the reducing agent and nickelocene as the precursor. NH{sub 2} radicals were generated by the thermal decomposition of NH{sub 3} with the assist of HW and used to reduce the adsorbed metal growth precursors. To understand and improve the deposition process, the kinetics of HW-ALD were analyzed using a Langmuir-type model. Unlike remote-plasma-enhanced atomic layer deposition, HW-ALD does not lead to plasma-induced damage. This is a significant advantage, because the authors can supply sufficient NH{sub 2} radicals to deposit high-purity metallic films by adjusting the distance between the hot wire and the substrate. NH{sub 2} radicals have a short lifetime, and it was important to use a short distance between the radical generation site and substrate. Furthermore, the impurity content of the nickel films was independent of the deposition temperature, which is evidence of the temperature-independent nature of the NH{sub 2} radical flux and the reactivity of the NH{sub 2} radicals.

  15. Ion-beam assisted laser fabrication of sensing plasmonic nanostructures

    CERN Document Server

    Kuchmizhak, Aleksandr; Vitrik, Oleg; Kulchin, Yuri; Milichko, Valentin; Makarov, Sergey; Kudryashov, Sergey

    2015-01-01

    Simple high-performance two-stage hybrid technique was developed for fabrication of different plasmonic nanostructures, including nanorods, nanorings, as well as more complex structures on glass substrates. In this technique a thin noble metal film on a dielectric substrate is irradiated by a tightly focused single nanosecond laser pulse and then the modified region is slowly polished by an accelerated argon ion (Ar+) beam. As a result, each nanosecond laser pulse locally modifies the initial metal film through initiation of fast melting and subsequent hydrodynamic processes, while the following Ar+-ion polishing removes the rest of the film, revealing the hidden topography features and fabricating separate plasmonic structures on the glass substrate. We demonstrate that the shape and lateral size of the resulting functional plasmonic nanostructures depends on the laser pulse energy and metal film thickness, while subsequent Ar+-ion polishing enables to vary height of the resulting nanostructures. The plasmon...

  16. UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

    DEFF Research Database (Denmark)

    Christensen, Bo Toftmann; Papantonalis, M.R.; Auyeung, R.C.Y.

    2004-01-01

    A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly [2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR......-PLD). For the first time resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) was successfully demonstrated on a luminescent polymer system. In addition to this, an excimer laser has been used for UV-MAPLE depositions at 193 and 248-nm irradiation. Films deposited onto NaCl and quartz substrates...... were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence. (C) 2003...

  17. Fabrication of bimetallic nanostructures via aerosol-assisted electroless silver deposition for catalytic CO conversion.

    Science.gov (United States)

    Byeon, Jeong Hoon; Kim, Jang-Woo

    2014-03-12

    Bimetallic nanostructures were fabricated via aerosol-assisted electroless silver deposition for catalytic CO conversion. An ambient spark discharge was employed to produce nanocatalysts, and the particles were directly deposited on a polytetrafluoroethylene substrate for initiating silver deposition to form Pd-Ag, Pt-Ag, Au-Ag bimetallic nanostructures as well as a pure Ag nanostructure. Kinetics and morphological evolutions in the silver deposition with different nanocatalysts were comparatively studied. The Pt catalyst displayed the highest catalytic activity for electroless silver deposition, followed by the order Pd > Au > Ag. Another catalytic activity of the fabricated bimetallic structures in the carbon monoxide conversion was further evaluated at low-temperature conditions. The bimetallic systems showed significantly higher catalytic activity than that from a pure Ag system.

  18. Microwave assisted apatite coating deposition on Ti6Al4V implants.

    Science.gov (United States)

    Zhou, Huan; Nabiyouni, Maryam; Bhaduri, Sarit B

    2013-10-01

    In this work we report a novel microwave assisted technology to deposit a uniform, ultra-thin apatite coating without any cracks on titanium implants in minutes. This method comprises of conventional biomimetic coating in synergism with microwave irradiation to result in alkaline earth phosphate nucleation. The microwave assisted coating process mainly follows the initial stages of biomimetic coating until the step of the Ca-P nuclei formation. After that, due to microwave irradiation more Ca-P nuclei are formed to cover the whole surface of the implant instead of the growth of deposited Ca-P nuclei to Ca-P globules and coatings. It is interesting to note the doping of Mg(2+) to Ca-P apatite coating can significantly change the properties and performances of as-deposited coatings. The hydrophilicity, physical properties, bioactivity, cell adhesion, and growth capability of as-deposited microwave assisted coatings were investigated. The study shows that this coating technology has great potential in biomedical applications. Additionally, since biomimetic coating can be applied to series of implant materials such as polymer, metals and glass, it is expected this microwave assisted coating technology can also be applied to these materials if they can remains stable at 100 °C, the boiling point of water.

  19. Microfluidic Patterning of Metal Structures for Flexible Conductors by In Situ Polymer-Assisted Electroless Deposition.

    Science.gov (United States)

    Liang, Suqing; Li, Yaoyao; Zhou, Tingjiao; Yang, Jinbin; Zhou, Xiaohu; Zhu, Taipeng; Huang, Junqiao; Zhu, Julie; Zhu, Deyong; Liu, Yizhen; He, Chuanxin; Zhang, Junmin; Zhou, Xuechang

    2017-02-01

    A low-cost, solution-processed, versatile, microfluidic approach is developed for patterning structures of highly conductive metals (e.g., copper, silver, and nickel) on chemically modified flexible polyethylene terephthalate thin films by in situ polymer-assisted electroless metal deposition. This method has significantly lowered the consumption of catalyst as well as the metal plating solution.

  20. Electron-beam induced deposition and autocatalytic decomposition of Co(CO3NO

    Directory of Open Access Journals (Sweden)

    Florian Vollnhals

    2014-07-01

    Full Text Available The autocatalytic growth of arbitrarily shaped nanostructures fabricated by electron beam-induced deposition (EBID and electron beam-induced surface activation (EBISA is studied for two precursors: iron pentacarbonyl, Fe(CO5, and cobalt tricarbonyl nitrosyl, Co(CO3NO. Different deposits are prepared on silicon nitride membranes and silicon wafers under ultrahigh vacuum conditions, and are studied by scanning electron microscopy (SEM and scanning transmission X-ray microscopy (STXM, including near edge X-ray absorption fine structure (NEXAFS spectroscopy. It has previously been shown that Fe(CO5 decomposes autocatalytically on Fe seed layers (EBID and on certain electron beam-activated surfaces, yielding high purity, polycrystalline Fe nanostructures. In this contribution, we investigate the growth of structures from Co(CO3NO and compare it to results obtained from Fe(CO5. Co(CO3NO exhibits autocatalytic growth on Co-containing seed layers prepared by EBID using the same precursor. The growth yields granular, oxygen-, carbon- and nitrogen-containing deposits. In contrast to Fe(CO5 no decomposition on electron beam-activated surfaces is observed. In addition, we show that the autocatalytic growth of nanostructures from Co(CO3NO can also be initiated by an Fe seed layer, which presents a novel approach to the fabrication of layered nanostructures.

  1. Electron-beam induced deposition and autocatalytic decomposition of Co(CO)3NO

    Science.gov (United States)

    Vollnhals, Florian; Drost, Martin; Tu, Fan; Carrasco, Esther; Späth, Andreas; Fink, Rainer H; Steinrück, Hans-Peter

    2014-01-01

    Summary The autocatalytic growth of arbitrarily shaped nanostructures fabricated by electron beam-induced deposition (EBID) and electron beam-induced surface activation (EBISA) is studied for two precursors: iron pentacarbonyl, Fe(CO)5, and cobalt tricarbonyl nitrosyl, Co(CO)3NO. Different deposits are prepared on silicon nitride membranes and silicon wafers under ultrahigh vacuum conditions, and are studied by scanning electron microscopy (SEM) and scanning transmission X-ray microscopy (STXM), including near edge X-ray absorption fine structure (NEXAFS) spectroscopy. It has previously been shown that Fe(CO)5 decomposes autocatalytically on Fe seed layers (EBID) and on certain electron beam-activated surfaces, yielding high purity, polycrystalline Fe nanostructures. In this contribution, we investigate the growth of structures from Co(CO)3NO and compare it to results obtained from Fe(CO)5. Co(CO)3NO exhibits autocatalytic growth on Co-containing seed layers prepared by EBID using the same precursor. The growth yields granular, oxygen-, carbon- and nitrogen-containing deposits. In contrast to Fe(CO)5 no decomposition on electron beam-activated surfaces is observed. In addition, we show that the autocatalytic growth of nanostructures from Co(CO)3NO can also be initiated by an Fe seed layer, which presents a novel approach to the fabrication of layered nanostructures. PMID:25161851

  2. Electron-beam induced deposition and autocatalytic decomposition of Co(CO)3NO.

    Science.gov (United States)

    Vollnhals, Florian; Drost, Martin; Tu, Fan; Carrasco, Esther; Späth, Andreas; Fink, Rainer H; Steinrück, Hans-Peter; Marbach, Hubertus

    2014-01-01

    The autocatalytic growth of arbitrarily shaped nanostructures fabricated by electron beam-induced deposition (EBID) and electron beam-induced surface activation (EBISA) is studied for two precursors: iron pentacarbonyl, Fe(CO)5, and cobalt tricarbonyl nitrosyl, Co(CO)3NO. Different deposits are prepared on silicon nitride membranes and silicon wafers under ultrahigh vacuum conditions, and are studied by scanning electron microscopy (SEM) and scanning transmission X-ray microscopy (STXM), including near edge X-ray absorption fine structure (NEXAFS) spectroscopy. It has previously been shown that Fe(CO)5 decomposes autocatalytically on Fe seed layers (EBID) and on certain electron beam-activated surfaces, yielding high purity, polycrystalline Fe nanostructures. In this contribution, we investigate the growth of structures from Co(CO)3NO and compare it to results obtained from Fe(CO)5. Co(CO)3NO exhibits autocatalytic growth on Co-containing seed layers prepared by EBID using the same precursor. The growth yields granular, oxygen-, carbon- and nitrogen-containing deposits. In contrast to Fe(CO)5 no decomposition on electron beam-activated surfaces is observed. In addition, we show that the autocatalytic growth of nanostructures from Co(CO)3NO can also be initiated by an Fe seed layer, which presents a novel approach to the fabrication of layered nanostructures.

  3. Bessel beams in tunable acoustic gradient index lenses and optical trap assisted nanolithography

    Science.gov (United States)

    McLeod, Euan

    2009-12-01

    Bessel beams are laser beams whose shape gives them nondiffracting and self-healing properties. They find use in applications requiring a narrow laser beam with a high depth of field. The first part of this thesis presents the study of a new adaptive optical element capable of generating rapidly tunable Bessel beams: the tunable acoustic gradient index (TAG) lens. This device uses piezoelectrically-generated acoustic waves to modulate a fluid's density and refractive index, leading to electrically controllable lensing behavior. Both modeling and experiment are used to explain the observed multiscale Bessel beams. Because the TAG lens operates at frequencies of hundreds of kilohertz, the effective Bessel beam cone angle continuously varies at timescales on the order of microseconds or smaller-orders of magnitude faster than other existing technologies. In addition, the TAG lens may be driven with a Fourier superposition of multiple frequencies, which could enable the generation of arbitrary patterns. The second part of this thesis presents the application of Bessel beams in a new probe-based direct-write optical nanolithography method called optical trap assisted nanolithography (OTAN). When compared to alternative techniques, OTAN makes probe placement and parallelization easier. The method uses Bessel beam optical tweezers to trap dielectric microspheres in close proximity to a surface. These microspheres are then illuminated with pulses from a second laser beam, whose fluence is enhanced directly below the microsphere by focusing and near-field effects to a level great enough to modify the substrate. This technique is used to produce 100 nm features, which are less than lambda/3, and whose sizes agree well with finite-difference time-domain models of the experiment. A demonstration is given of how the technique can be parallelized by trapping multiple microspheres with multiple beams and exposing all spheres in unison with a single pulsed beam. Finally, modeling

  4. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Tseng, H. Y.; Yang, W. C.; Lee, P. Y.; Lin, C. W.; Cheng, Kai-Yuan; Hsieh, K. C.; Cheng, K. Y.; Hsu, C.-H.

    2016-08-01

    GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

  5. Deposition of diamond like carbon films by using a single ion gun with varying beam source

    Institute of Scientific and Technical Information of China (English)

    JIANG Jin-qiu; Chen Zhu-ping

    2001-01-01

    Diamond like carbon films have been successfully deposited on the steel substrate, by using a single ion gun with varying beam source. The films may appear blue, yellow and transparent in color, which was found related to contaminants from the sample holder and could be avoided. The thickness of the films ranges from tens up to 200 nanometers, and the hardness is in the range 20 to 30 GPa. Raman analytical results reveal the films are in amorphous structure. The effects of different beam source on the films structure are further discussed.

  6. Ion-beam assisted laser fabrication of sensing plasmonic nanostructures

    Science.gov (United States)

    Kuchmizhak, Aleksandr; Gurbatov, Stanislav; Vitrik, Oleg; Kulchin, Yuri; Milichko, Valentin; Makarov, Sergey; Kudryashov, Sergey

    2016-01-01

    Simple high-performance, two-stage hybrid technique was developed for fabrication of different plasmonic nanostructures, including nanorods, nanorings, as well as more complex structures on glass substrates. In this technique, a thin noble-metal film on a dielectric substrate is irradiated by a single tightly focused nanosecond laser pulse and then the modified region is slowly polished by an accelerated argon ion (Ar+) beam. As a result, each nanosecond laser pulse locally modifies the initial metal film through initiation of fast melting and subsequent hydrodynamic processes, while the following Ar+-ion polishing removes the rest of the film, revealing the hidden topography features and fabricating separate plasmonic structures on the glass substrate. We demonstrate that the shape and lateral size of the resulting functional plasmonic nanostructures depend on the laser pulse energy and metal film thickness, while subsequent Ar+-ion polishing enables to vary height of the resulting nanostructures. Plasmonic properties of the fabricated nanostructures were characterized by dark-field micro-spectroscopy, Raman and photoluminescence measurements performed on single nanofeatures, as well as by supporting numerical calculations of the related electromagnetic near-fields and Purcell factors. The developed simple two-stage technique represents a new step towards direct large-scale laser-induced fabrication of highly ordered arrays of complex plasmonic nanostructures.

  7. A novel electron beam evaporation technique for the deposition of superconducting thin films

    Science.gov (United States)

    Krishna, M. G.; Muralidhar, G. K.; Rao, K. N.; Rao, G. M.; Mohan, S.

    1991-05-01

    Superconducting thin films of BiSrCaCuO have been deposited using a novel electron beam evaporation technique. In this technique the crucible has a groove around its circumference and rotates continuously during deposition. The source material is loaded in the form of pellets of the composite. Both oxides as well as flourides have been used in the starting material and a comparison of the film properties has been made. The best film was obtained on a MgO(100) substrate with a Tc onset at 85 K and Tc zero at 77 K using calcium flouride in the source material.

  8. Nitrogen as a carrier gas for regime control in focused electron beam induced deposition

    Directory of Open Access Journals (Sweden)

    Wachter Stefan

    2014-01-01

    Full Text Available This work reports on focused electron beam induced deposition (FEBID using a custom built gas injection system (GIS equipped with nitrogen as a gas carrier. We have deposited cobalt from Co2(CO8, which is usually achieved by a heated GIS. In contrast to a heated GIS, our strategy allows avoiding problems caused by eventual temperature gradients along the GIS. Moreover, the use of the gas carrier enables a high control over process conditions and consequently the properties of the synthesized nanostructures. Chemical composition and growth rate are investigated by energy dispersive X-ray spectroscopy (EDX and atomic force microscopy (AFM, respectively. We demonstrate that the N2 flux is strongly affecting the deposit growth rate without the need of heating the precursor in order to increase its vapour pressure. Particularly, AFM volume estimation of the deposited structures showed that increasing the nitrogen resulted in an enhanced deposition rate. The wide range of achievable precursor fluxes allowed to clearly distinguish between precursor- and electron-limited regime. With the carrier-based GIS an optimized deposition procedure with regards to the desired deposition regime has been enabled

  9. Highly conductive and pure gold nanostructures grown by electron beam induced deposition

    Science.gov (United States)

    Shawrav, Mostafa M.; Taus, Philipp; Wanzenboeck, Heinz D.; Schinnerl, M.; Stöger-Pollach, M.; Schwarz, S.; Steiger-Thirsfeld, A.; Bertagnolli, Emmerich

    2016-09-01

    This work introduces an additive direct-write nanofabrication technique for producing extremely conductive gold nanostructures from a commercial metalorganic precursor. Gold content of 91 atomic % (at. %) was achieved by using water as an oxidative enhancer during direct-write deposition. A model was developed based on the deposition rate and the chemical composition, and it explains the surface processes that lead to the increases in gold purity and deposition yield. Co-injection of an oxidative enhancer enabled Focused Electron Beam Induced Deposition (FEBID)—a maskless, resistless deposition method for three dimensional (3D) nanostructures—to directly yield pure gold in a single process step, without post-deposition purification. Gold nanowires displayed resistivity down to 8.8 μΩ cm. This is the highest conductivity achieved so far from FEBID and it opens the possibility of applications in nanoelectronics, such as direct-write contacts to nanomaterials. The increased gold deposition yield and the ultralow carbon level will facilitate future applications such as the fabrication of 3D nanostructures in nanoplasmonics and biomolecule immobilization.

  10. Strain-dependent conductivity of granular metals prepared by focused particle beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Grimm, Christina; Baranowski, Markus; Huth, Michael [Physikalisches Institut, Goethe-Universitaet, Frankfurt am Main (Germany); Voelklein, Friedemann [Institut fuer Mikrotechnologien, Hochschule RheinMain, Ruesselsheim (Germany)

    2010-07-01

    We report on the strain-dependence of the electrical conductivity of granular metals prepared by focused particle beam induced deposition. The samples were prepared in a dual-beam electron / Ga ion scanning microscope using selected precursors, such as W(CO){sub 6}. Stripe-like deposits were fabricated on dedicated cantilevers pre-patterned with contact pads made from Cr/Au. The cantilever deflection was induced in-situ by means of a four axes nano-manipulator and the conductivity change was recorded by lock-in technique employing a Wheatstone resistance bridge. Current-voltage characteristics and strain-dependence were measured for samples of various thicknesses and composition. For selected samples time-dependent conductivity data were taken as the samples were slowly exposed to air.

  11. Organic molecular beam deposition system and initial studies of organic layer growth

    Energy Technology Data Exchange (ETDEWEB)

    Andreasson, M [Applied Semiconductor Physics, Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Goeteborg (Sweden); Ilver, L [Department of Experimental Physics, Chalmers University of Technology, S-41296 Goeteborg (Sweden); Kanski, J [Department of Experimental Physics, Chalmers University of Technology, S-41296 Goeteborg (Sweden); Andersson, T G [Applied Semiconductor Physics, Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Goeteborg (Sweden)

    2006-09-01

    This work describes an organic molecular beam deposition system with substrate entry/exit chamber, buffer chamber and with the possibility to transfer substrate from a III-V molecular beam deposition system. Flux calibrations of organic molecules and the initial growth of organic layers are described. For this purpose, the molecules 3,4,9,10 perylene tetra carboxylic dianhydride and copper phtalocyanine were used. Layers were grown on oxidized and hydrogen passivated Si(100), Indium tin oxide and glass respectively. The growth was investigated with atomic force microscopy, reflection high energy electron diffraction and ultraviolet photoemission spectroscopy. An investigation with x-ray photoelectron and Raman spectroscopy on the effect of atmospheric exposure is also included, showing little effect of surface pollution when the samples were handled carefully. The initial formation (monolayers) of copper phtalocyanine thin films was studied by ultraviolet photoemission spectroscopy.

  12. CdS thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

  13. Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings

    Directory of Open Access Journals (Sweden)

    Januś M.

    2015-06-01

    Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

  14. Laser and optical system for laser assisted hydrogen ion beam stripping at SNS

    Science.gov (United States)

    Liu, Y.; Rakhman, A.; Menshov, A.; Webster, A.; Gorlov, T.; Aleksandrov, A.; Cousineau, S.

    2017-03-01

    Recently, a high-efficiency laser assisted hydrogen ion (H-) beam stripping was successfully carried out in the Spallation Neutron Source (SNS) accelerator. The experiment was not only an important step toward foil-less H- stripping for charge exchange injection, it also set up a first example of using megawatt ultraviolet (UV) laser source in an operational high power proton accelerator facility. This paper reports in detail the design, installation, and commissioning result of a macro-pulsed multi-megawatt UV laser system and laser beam transport line for the laser stripping experiment.

  15. Ion beam deposition and surface characterization of thin multi-component oxide films during growth.

    Energy Technology Data Exchange (ETDEWEB)

    Krauss, A.R.; Im, J.; Smentkowski, V.; Schultz, J.A.; Auciello, O.; Gruen, D.M.; Holocek, J.; Chang, R.P.H.

    1998-01-13

    Ion beam deposition of either elemental targets in a chemically active gas such as oxygen or nitrogen, or of the appropriate oxide or nitride target, usually with an additional amount of ambient oxygen or nitrogen present, is an effective means of depositing high quality oxide and nitride films. However, there are a number of phenomena which can occur, especially during the production of multicomponent films such as the ferroelectric perovskites or high temperature superconducting oxides, which make it desirable to monitor the composition and structure of the growing film in situ. These phenomena include thermodynamic (Gibbsian), and oxidation or nitridation-driven segregation, enhanced oxidation or nitridation through production of a highly reactive gas phase species such as atomic oxygen or ozone via interaction of the ion beam with the target, and changes in the film composition due to preferential sputtering of the substrate via primary ion backscattering and secondary sputtering of the film. Ion beam deposition provides a relatively low background pressure of the sputtering gas, but the ambient oxygen or nitrogen required to produce the desired phase, along with the gas burden produced by the ion source, result in a background pressure which is too high by several orders of magnitude to perform in situ surface analysis by conventional means. Similarly, diamond is normally grown in the presence of a hydrogen atmosphere to inhibit the formation of the graphitic phase.

  16. An analytical model of beam attenuation and powder heating during coaxial laser direct metal deposition

    Science.gov (United States)

    Pinkerton, Andrew J.

    2007-12-01

    In the laser direct metal deposition process, interaction between the laser beam and powder from a coaxial powder delivery nozzle alters the temperature of powder and the amount and spatial distribution of laser intensity reaching the deposition melt pool. These factors significantly affect the process and are also important input parameters for any finite element or analytical models of the melt pool and deposition tracks. The analytical model in this paper presents a method to calculate laser attenuation and powder temperatures at every point below such a nozzle. It is applicable to laser beams that are approximately parallel over the beam-powder interaction distance of any initial intensity distribution (Top Hat, Gaussian, TEM01ast or other). The volume below the nozzle is divided into the region above the powder consolidation plane, where the powder stream is annular, and below it, where it is a single Gaussian stream, and expressions derived for each region. Modelled and measured results are reasonably matched. Results indicate that attenuation is more severe once the annular powder stream has consolidated into a single stream but is not zero before that point. The temperature of powder reaching any point is not constant but the mean value is a maximum at the centre of the stream.

  17. Enhanced Bactericidal Activity of Silver Thin Films Deposited via Aerosol-Assisted Chemical Vapor Deposition

    OpenAIRE

    Ponja, S. D.; Sehmi, S. K.; Allan, E.; MacRobert, A. J.; Parkin, I. P.; Carmalt, C. J.

    2015-01-01

    Silver thin films were deposited on SiO2-barrier-coated float glass, fluorine-doped tin oxide (FTO) glass, Activ glass, and TiO2-coated float glass via AACVD using silver nitrate at 350 °C. The films were annealed at 600 °C and analyzed by X-ray powder diffraction, X-ray photoelectron spectroscopy, UV/vis/near-IR spectroscopy, and scanning electron microscopy. All the films were crystalline, and the silver was present in its elemental form and of nanometer dimension. The antibacterial activit...

  18. Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches

    Science.gov (United States)

    Erkens, I. J. M.; Verheijen, M. A.; Knoops, H. C. M.; Keuning, W.; Roozeboom, F.; Kessels, W. M. M.

    2017-02-01

    To date, conventional thermal atomic layer deposition (ALD) has been the method of choice to deposit high-quality Pt thin films grown typically from (MeCp)PtMe3 vapor and O2 gas at 300 °C. Plasma-assisted ALD of Pt using O2 plasma can offer several advantages over thermal ALD, such as faster nucleation and deposition at lower temperatures. In this work, it is demonstrated that plasma-assisted ALD at 300 °C also allows for the deposition of highly conformal Pt films in trenches with high aspect ratio ranging from 3 to 34. Scanning electron microscopy inspection revealed that the conformality of the deposited Pt films was 100% in trenches with aspect ratio (AR) up to 34. These results were corroborated by high-precision layer thickness measurements by transmission electron microscopy for trenches with an aspect ratio of 22. The role of the surface recombination of O-radicals and the contribution of thermal ALD reactions is discussed.

  19. Single-crystal nanowires grown via electron-beam-induced deposition

    Science.gov (United States)

    Klein, K. L.; Randolph, S. J.; Fowlkes, J. D.; Allard, L. F.; Meyer, H. M., III; Simpson, M. L.; Rack, P. D.

    2008-08-01

    Electron-beam-induced deposition (EBID) is a useful technique for direct-writing of three-dimensional dielectric, semiconductor, and metallic materials with nanoscale precision and resolution. The EBID process, however, has been limited in many cases because precursor byproducts (typically from organic precursors like W(CO)6) are incorporated into the deposited material resulting in contaminated and amorphous structures. In this work, we have investigated the structure and composition of EBID tungsten nanostructures as-deposited from a tungsten hexafluoride (WF6) precursor. High resolution transmission electron microscopy, electron diffraction and electron spectroscopy were employed to determine the effects that the electron beam scanning conditions have on the deposit characteristics. The results show that slow, one-dimensional lateral scanning produces textured β-tungsten nanowire cores surrounded by an oxide secondary layer, while stationary vertical growth leads to single-crystal [100]-oriented W3O nanowires. Furthermore we correlate how the growth kinetics affect the resultant nanowire structure and composition.

  20. Single-crystal nanowires grown via electron-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Klein, K L; Randolph, S J; Simpson, M L; Rack, P D [Materials Science and Engineering Department, University of Tennessee, 434 Dougherty Hall, Knoxville, TN 37996 (United States); Fowlkes, J D [Center for Nanophase Materials Sciences Division, Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, TN 37831 (United States); Allard, L F; III, H M Meyer [Materials Science and Technology Division, Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, TN 37831 (United States)], E-mail: prack@utk.edu

    2008-08-27

    Electron-beam-induced deposition (EBID) is a useful technique for direct-writing of three-dimensional dielectric, semiconductor, and metallic materials with nanoscale precision and resolution. The EBID process, however, has been limited in many cases because precursor byproducts (typically from organic precursors like W(CO){sub 6}) are incorporated into the deposited material resulting in contaminated and amorphous structures. In this work, we have investigated the structure and composition of EBID tungsten nanostructures as-deposited from a tungsten hexafluoride (WF{sub 6}) precursor. High resolution transmission electron microscopy, electron diffraction and electron spectroscopy were employed to determine the effects that the electron beam scanning conditions have on the deposit characteristics. The results show that slow, one-dimensional lateral scanning produces textured {beta}-tungsten nanowire cores surrounded by an oxide secondary layer, while stationary vertical growth leads to single-crystal [100]-oriented W{sub 3}O nanowires. Furthermore we correlate how the growth kinetics affect the resultant nanowire structure and composition.

  1. Precise thin film synthesis by ion beam sputter deposition; Herstellung von Praezisionsschichten mittels Ionenstrahlsputtern

    Energy Technology Data Exchange (ETDEWEB)

    Gawlitza, P.; Braun, S.; Leson, A.; Lipfert, S. [Fraunhofer-Institut fuer Werkstoffphysik und Schichttechnologie (IWS), Dresden (Germany); Nestler, M. [Roth und Rau AG, Hohenstein-Ernstthal (Germany)

    2007-04-15

    Ion beam sputter deposition (IBSD) is a promising technique for the fabrication of high performance thin films because of the well defined and adjustable particle energies, which are rather high in comparison to other PVD techniques. Recent developments concerning long-term stability and lateral uniformity of the ion beam sources strengthen the position of the IBSD technique in the field of precise thin film synthesis. Furthermore, IBSD offers a more independent choice of relevant deposition parameters like particle energy and flux, process gas pressure and deposition rate. In this paper we present our currently installed large area IBSD facility 'IonSys 1600', which was developed by Fraunhofer IWS Dresden and Roth and Rau company (Hohenstein-Ernstthal). Substrate sizes of up to 200 mm (circular) or up to 500 mm length (rectangular) can be coated and multilayer stacks with up to six different materials are possible. Tailored 1- or 2- dimensional film thickness distribution with deviations of <0.1% can be fabricated by a relative linear motion of the substrate holder above an aperture. In order to demonstrate the advantages of the IBSD technique especially for sophisticated materials and films with high requirements concerning purity, chemical composition or growth structure, several examples of deposited multilayers for various applications are presented. (orig.)

  2. In situ growth optimization in focused electron-beam induced deposition

    Directory of Open Access Journals (Sweden)

    Paul M. Weirich

    2013-12-01

    Full Text Available We present the application of an evolutionary genetic algorithm for the in situ optimization of nanostructures that are prepared by focused electron-beam-induced deposition (FEBID. It allows us to tune the properties of the deposits towards the highest conductivity by using the time gradient of the measured in situ rate of change of conductance as the fitness parameter for the algorithm. The effectiveness of the procedure is presented for the precursor W(CO6 as well as for post-treatment of Pt–C deposits, which were obtained by the dissociation of MeCpPt(Me3. For W(CO6-based structures an increase of conductivity by one order of magnitude can be achieved, whereas the effect for MeCpPt(Me3 is largely suppressed. The presented technique can be applied to all beam-induced deposition processes and has great potential for a further optimization or tuning of parameters for nanostructures that are prepared by FEBID or related techniques.

  3. Metallization of bacterial surface layer by cross-beam pulsed laser deposition

    Science.gov (United States)

    Pompe, Wolfgang; Mertig, Michael; Kirsch, Remo; Gorbunov, Andre A.; Sewing, Andreas; Engelhardt, Harald; Mensch, Axel

    1996-04-01

    We present first results on thin film metal deposition on the regular bacterial surface layer of Sporsarcina urea by pulsed laser deposition. To prevent structural damage of the biological specimen a recently developed cross beam technique is applied providing an effective filtering of the most energetic plasma particles. The deposited films are examined by low voltage scanning electron microscopy. The surface profile of the S-layer adsorbed onto mica substrate was investigated by atomic force microscopy. A lattice constant of 13.2 nm has been measured. The lattice parameters and the structural appearance of the protein layer is in reasonable agreement with the results of an electron microscopical 3D structural analysis.

  4. Unveiling the optical properties of a metamaterial synthesized by electron-beam-induced deposition

    CERN Document Server

    Woźniak, Paweł; Brönstrup, Gerald; Banyer, Peter; Christiansen, Silke; Leuchs, Gerd

    2015-01-01

    The direct writing using a focused electron beam allows for fabricating truly three-dimensional structures of sub-wavelength dimensions in the visible spectral regime. The resulting sophisticated geometries are perfectly suited for studying light-matter interaction at the nanoscale. Their overall optical response will strongly depend not only on geometry but also on the optical properties of the deposited material. In case of the typically used metal-organic precursors, the deposits show a substructure of metallic nanocrystals embedded in a carbonaceous matrix. Since gold-containing precursor media are especially interesting for optical applications, we experimentally determine the effective permittivity of such an effective material. Our experiment is based on spectroscopic measurements of planar deposits. The retrieved permittivity shows a systematic dependence on the gold particle density and cannot be sufficiently described using the common Maxwell-Garnett approach for effective medium.

  5. Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition

    Institute of Scientific and Technical Information of China (English)

    Xiong Fei; Yang Tao; Song Zhao-Ning; Yang Pei-Zhi

    2013-01-01

    Self-assembled Ge nanodots with areal number density up to 2.33 × 1010 cm-2 and aspect ratio larger than 0.12 are prepared by ion beam sputtering deposition.The dot density,a function of deposition rate and Ge coverage,is observed to be limited mainly by the transformation from two-dimensional precursors to three-dimensional islands,and to be associated with the adatom behaviors of attachment and detachment from the islands.An unusual increasing temperature dependence of nanodot density is also revealed when a high ion energy is employed in sputtering deposition,and is shown to be related to the breaking down of the superstrained wetting layer.This result is attributed to the interaction between energetic atoms and the growth surface,which mediates the island nucleation.

  6. Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography

    Science.gov (United States)

    Liu, Zhengjun; Shah, Ali; Alasaarela, Tapani; Chekurov, Nikolai; Savin, Hele; Tittonen, Ilkka

    2017-02-01

    In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga+ ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90–210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16:1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication.

  7. Thickness dependence of electrical properties of PZT films deposited on metal substrates by laser-assisted aerosol deposition.

    Science.gov (United States)

    Baba, S; Tsuda, H; Akedo, J

    2008-05-01

    Dependence of electrical properties-dielectric, ferroelectric, and piezoelectric properties-on film thickness was studied for lead-zirconate titanate (PZT) thick films directly deposited onto stainless-steel (SUS) substrates in actuator devices by using a carbon dioxide (CO(2) ), laser assisted aerosol deposition technique. Optical spectroscopic analysis data and laser irradiation experiments revealed that absorption at a given wavelength by the film increased with increasing film thickness. Dielectric constant epsilon, remanent polarization value P(r), and coercive field strength E(c) of PZT films directly deposited onto a SUS-based piezoelectric actuator substrate annealed by CO(2) laser irradiation at 850 degrees C improved with increasing film thickness, and for films thicker than 25 microm, epsilon 800, P(r) 40 microC/cm(2), and E(c) 45 kV/cm. In contrast, the displacement of the SUS-based actuator with the laser-annealed PZT thick film decreased with increasing film thickness.

  8. Effect of deuterium ion beam irradiation onto the mirror-like pulsed laser deposited thin films of rhodium

    Energy Technology Data Exchange (ETDEWEB)

    Mostako, A.T.T., E-mail: abu@iitg.ernet.in [Laser and Photonics Lab, Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Khare, Alika [Laser and Photonics Lab, Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Rao, C.V.S.; Vala, Sudhirsinh; Makwana, R.J.; Basu, T.K. [Neutronics Lab, Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)

    2015-01-01

    Highlights: • Rh mirror like thin films are fabricated by PLD technique for FM application. • Rh thin film FMs are irradiated with 10, 20, and 30 keV D ion beam. • Effect of D ion beam irradiation on Rh FM’s reflectivity is investigated. - Abstract: The effect of deuterium ion beam irradiation on the reflectivity of mirror-like pulsed laser deposited (PLD) thin film of rhodium is reported. The deposition parameters; target-substrate distance and background helium gas pressure were optimized to obtain the good quality rhodium films, of higher thickness, oriented preferentially in (1 1 1) plane. The rhodium thin films deposited at optimum PLD parameters were exposed to 10, 20, and 30 keV deuterium ion beam. The changes in surface morphology and UV–Visible–FIR reflectivity of mirror-like rhodium thin films, as a function of energy of deuterium ion beam, after exposure are reported.

  9. Observation of strong leakage reduction in crystal assisted collimation of the SPS beam

    Energy Technology Data Exchange (ETDEWEB)

    Scandale, W. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Laboratoire de l' Accelerateur Lineaire (LAL), Universite Paris Sud Orsay, Orsay (France); INFN Sezione di Roma, Piazzale Aldo Moro 2, 00185 Rome (Italy); Arduini, G.; Butcher, M.; Cerutti, F.; Garattini, M.; Gilardoni, S.; Lechner, A.; Losito, R.; Masi, A.; Mereghetti, A.; Metral, E. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Mirarchi, D. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Imperial College, London (United Kingdom); Montesano, S.; Redaelli, S. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Rossi, R. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); INFN Sezione di Roma, Piazzale Aldo Moro 2, 00185 Rome (Italy); Schoofs, P.; Smirnov, G. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Bagli, E.; Bandiera, L.; Baricordi, S. [INFN Sezione di Ferrara, Dipartimento di Fisica, Università di Ferrara, Ferrara (Italy); and others

    2015-09-02

    In ideal two-stage collimation systems, the secondary collimator–absorber should have its length sufficient to exclude practically the exit of halo particles with large impact parameters. In the UA9 experiments on the crystal assisted collimation of the SPS beam a 60 cm long tungsten bar is used as a secondary collimator–absorber which is insufficient for the full absorption of the halo protons. Multi-turn simulation studies of the collimation allowed to select the position for the beam loss monitor downstream the collimation area where the contribution of particles deflected by the crystal in channeling regime but emerging from the secondary collimator–absorber is considerably reduced. This allowed observation of a strong leakage reduction of halo protons from the SPS beam collimation area, thereby approaching the case with an ideal absorber.

  10. Observation of strong leakage reduction in crystal assisted collimation of the SPS beam

    Directory of Open Access Journals (Sweden)

    W. Scandale

    2015-09-01

    Full Text Available In ideal two-stage collimation systems, the secondary collimator–absorber should have its length sufficient to exclude practically the exit of halo particles with large impact parameters. In the UA9 experiments on the crystal assisted collimation of the SPS beam a 60 cm long tungsten bar is used as a secondary collimator–absorber which is insufficient for the full absorption of the halo protons. Multi-turn simulation studies of the collimation allowed to select the position for the beam loss monitor downstream the collimation area where the contribution of particles deflected by the crystal in channeling regime but emerging from the secondary collimator–absorber is considerably reduced. This allowed observation of a strong leakage reduction of halo protons from the SPS beam collimation area, thereby approaching the case with an ideal absorber.

  11. Observation of strong leakage reduction in crystal assisted collimation of the SPS beam

    Science.gov (United States)

    Scandale, W.; Arduini, G.; Butcher, M.; Cerutti, F.; Garattini, M.; Gilardoni, S.; Lechner, A.; Losito, R.; Masi, A.; Mereghetti, A.; Metral, E.; Mirarchi, D.; Montesano, S.; Redaelli, S.; Rossi, R.; Schoofs, P.; Smirnov, G.; Bagli, E.; Bandiera, L.; Baricordi, S.; Dalpiaz, P.; Germogli, G.; Guidi, V.; Mazzolari, A.; Vincenzi, D.; Claps, G.; Dabagov, S.; Hampai, D.; Murtas, F.; Cavoto, G.; Iacoangeli, F.; Ludovici, L.; Santacesaria, R.; Valente, P.; Galluccio, F.; Afonin, A. G.; Chesnokov, Yu. A.; Durum, A. A.; Maisheev, V. A.; Sandomirskiy, Yu. E.; Yanovich, A. A.; Kovalenko, A. D.; Taratin, A. M.; Gavrikov, Yu. A.; Ivanov, Yu. M.; Lapina, L. P.; Fulcher, J.; Hall, G.; Pesaresi, M.; Raymond, M.

    2015-09-01

    In ideal two-stage collimation systems, the secondary collimator-absorber should have its length sufficient to exclude practically the exit of halo particles with large impact parameters. In the UA9 experiments on the crystal assisted collimation of the SPS beam a 60 cm long tungsten bar is used as a secondary collimator-absorber which is insufficient for the full absorption of the halo protons. Multi-turn simulation studies of the collimation allowed to select the position for the beam loss monitor downstream the collimation area where the contribution of particles deflected by the crystal in channeling regime but emerging from the secondary collimator-absorber is considerably reduced. This allowed observation of a strong leakage reduction of halo protons from the SPS beam collimation area, thereby approaching the case with an ideal absorber.

  12. Aerosol-assisted plasma deposition of hydrophobic polycations makes surfaces highly antimicrobial.

    Science.gov (United States)

    Liu, Harris; Kim, Yoojeong; Mello, Kerrianne; Lovaasen, John; Shah, Apoorva; Rice, Norman; Yim, Jacqueline H; Pappas, Daphne; Klibanov, Alexander M

    2014-02-01

    The currently used multistep chemical synthesis for making surfaces antimicrobial by attaching to them hydrophobic polycations is replaced herein by an aerosol-assisted plasma deposition procedure. To this end, N,N-hexyl,methyl-PEI (HMPEI) is directly plasma-coated onto a glass surface. The resultant immobilized HMPEI coating has been thoroughly characterized and shown to be robust, bactericidal against Escherichia coli, and virucidal against human influenza virus.

  13. Optimization of spray deposition and Tetranychus urticae control with air assisted and electrostatic sprayer

    Directory of Open Access Journals (Sweden)

    Denise Tourino Rezende de Cerqueira

    Full Text Available ABSTRACT: Improved spray deposition can be attained by electrostatically charging spray droplets, which increases the attraction of droplets to plants and decreases operator exposure to pesticide and losses to the environment. However, this technique alone is not sufficient to achieve desirable penetration of the spray solution into the crop canopy; thus, air assistance can be added to the electrostatic spraying to further improve spray deposition. This study was conducted to compare different spraying technologies on spray deposition and two-spotted spider mite control in cut chrysanthemum. Treatments included in the study were: conventional TJ 8003 double flat fan nozzles, conventional TXVK-3 hollow cone nozzles, semi-stationary motorized jet launched spray with electrostatic spray system (ESS and air assistance (AA, and semi-stationary motorized jet launched spray with AA only (no ESS. To evaluate the effect of these spraying technologies on the control of two-spotted spider mite, a control treatment was included that did not receive an acaricide application. The AA spraying technology, with or without ESS, optimized spray deposition and provided satisfactory two-spotted spider mite control up to 4 days after application.

  14. Electrochemically assisted deposition of strontium modified magnesium phosphate on titanium surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Meininger, M. [Department for Functional Materials in Medicine and Dentistry, University of Würzburg, Pleicherwall 2, D-97070 Würzburg (Germany); Wolf-Brandstetter, C. [Max Bergmann Center for Biomaterials, Technical University of Dresden, Budapester Straße 27, D-01069 Dresden (Germany); Zerweck, J.; Wenninger, F.; Gbureck, U.; Groll, J. [Department for Functional Materials in Medicine and Dentistry, University of Würzburg, Pleicherwall 2, D-97070 Würzburg (Germany); Moseke, C., E-mail: claus.moseke@fmz.uni-wuerzburg.de [Department for Functional Materials in Medicine and Dentistry, University of Würzburg, Pleicherwall 2, D-97070 Würzburg (Germany)

    2016-10-01

    Electrochemically assisted deposition was utilized to produce ceramic coatings on the basis of magnesium ammonium phosphate (struvite) on corundum-blasted titanium surfaces. By the addition of defined concentrations of strontium nitrate to the coating electrolyte Sr{sup 2+} ions were successfully incorporated into the struvite matrix. By variation of deposition parameters it was possible to fabricate coatings with different kinetics of Sr{sup 2+} into physiological media, whereas the release of therapeutically relevant strontium doses could be sustained over several weeks. Morphological and crystallographic examinations of the immersed coatings revealed that the degradation of struvite and the release of Sr{sup 2+} ions were accompanied by a transformation of the coating to a calcium phosphate based phase similar to low-crystalline hydroxyapatite. These findings showed that strontium doped struvite coatings may provide a promising degradable coating system for the local application of strontium or other biologically active metal ions in the implant–bone interface. - Highlights: • Sr-doped struvite coatings have been deposited on titanium by electrochemically assisted deposition. • Sr content can be adjusted by means of process time, current density and pulse mode. • Sr-doped coatings release therapeutically relevant Sr doses in physiological media for several weeks. • During immersion in physiological media Sr-doped struvite coatings transform into a low crystalline calcium phosphate phase.

  15. Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

    Science.gov (United States)

    Palla-Papavlu, A.; Rusen, L.; Dinca, V.; Filipescu, M.; Lippert, T.; Dinescu, M.

    2014-05-01

    In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm2 the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

  16. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    Science.gov (United States)

    Shaji, S.; Garcia, L. V.; Loredo, S. L.; Krishnan, B.; Aguilar Martinez, J. A.; Das Roy, T. K.; Avellaneda, D. A.

    2017-01-01

    Antimony sulfide (Sb2S3) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb2S3 thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV-vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb2S3 thin films for optoelectronic applications.

  17. Low temperature metal free growth of graphene on insulating substrates by plasma assisted chemical vapor deposition

    Science.gov (United States)

    Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

    2017-03-01

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650 °C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

  18. Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Palla-Papavlu, A., E-mail: apalla@nipne.ro [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Rusen, L.; Dinca, V.; Filipescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Lippert, T. [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland); Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania)

    2014-05-01

    In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm{sup 2} the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

  19. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam

    KAUST Repository

    Alaie, Seyedhamidreza

    2015-02-04

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties. In this work, Pt deposited by FIB is characterized thermally, structurally, and chemically. Its thermal conductivity is found to be substantially lower than the bulk value of Pt, 7.2 W m-1 K-1 versus 71.6 W m-1 K-1 at room temperature. The low thermal conductivity is attributed to the nanostructure of the material and its chemical composition. Pt deposited by FIB is shown, via aberration corrected TEM, to be a segregated mix of nanocrystalline Pt and amorphous C with Ga and O impurities. Ga impurities mainly reside in the Pt while O is homogeneously distributed throughout. The Ga impurity, small grain size of the Pt, and the amorphous carbon between grains are the cause for the low thermal conductivity of this material. Since Pt deposited by FIB is a common material for affixing samples, this information can be used to assess systematic errors in thermal characterization of different nanosamples. This application is also demonstrated by thermal characterization of two carbon nanofibers and a correction using the reported thermal properties of the Pt deposited by FIB.

  20. Electrochemical impedance spectroscopy on nanostructured carbon electrodes grown by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bettini, Luca Giacomo; Bardizza, Giorgio; Podesta, Alessandro; Milani, Paolo; Piseri, Paolo, E-mail: piseri@mi.infn.it [Universita degli Studi di Milano, Dipartimento di Fisica and CIMaINa (Italy)

    2013-02-15

    Nanostructured porous films of carbon with density of about 0.5 g/cm{sup 3} and 200 nm thickness were deposited at room temperature by supersonic cluster beam deposition (SCBD) from carbon clusters formed in the gas phase. Carbon film surface topography, determined by atomic force microscopy, reveals a surface roughness of 16 nm and a granular morphology arising from the low kinetic energy ballistic deposition regime. The material is characterized by a highly disordered carbon structure with predominant sp2 hybridization as evidenced by Raman spectroscopy. The interface properties of nanostructured carbon electrodes were investigated by cyclic voltammetry and electrochemical impedance spectroscopy employing KOH 1 M solution as aqueous electrolyte. An increase of the double layer capacitance is observed when the electrodes are heat treated in air or when a nanostructured nickel layer deposited by SCBD on top of a sputter deposited film of the same metal is employed as a current collector instead of a plain metallic film. This enhancement is consistent with an improved charge injection in the active material and is ascribed to the modification of the electrical contact at the interface between the carbon and the metal current collector. Specific capacitance values up to 120 F/g have been measured for the electrodes with nanostructured metal/carbon interface.

  1. Spatial chemistry evolution during focused electron beam-induced deposition: origins and workarounds

    Energy Technology Data Exchange (ETDEWEB)

    Winkler, Robert; Geier, Barbara [Graz Centre for Electron Microscopy, Graz (Austria); Plank, Harald [Graz Centre for Electron Microscopy, Graz (Austria); Graz University of Technology, Institute for Electron Microscopy and Nanoanalysis, Graz (Austria)

    2014-12-15

    The successful application of functional nanostructures, fabricated via focused electron-beam-induced deposition (FEBID), is known to depend crucially on its chemistry as FEBID tends to strong incorporation of carbon. Hence, it is essential to understand the underlying mechanisms which finally determine the elemental composition after fabrication. In this study we focus on these processes from a fundamental point of view by means of (1) varying electron emission on the deposit surface; and (2) changing replenishment mechanism, both driven by the growing deposit itself. First, we revisit previous results concerning chemical variations in nanopillars (with a quasi-1D footprint) depending on the process parameters. In a second step we expand the investigations to deposits with a 3D footprint which are more relevant in the context of applications. Then, we demonstrate how technical setups and directional gas fluxes influence final chemistries. Finally, we put the findings in a bigger context with respect to functionalities which demonstrates the crucial importance of carefully set up fabrication processes to achieve controllable, predictable and reproducible chemistries for FEBID deposits as a key element for industrially oriented applications. (orig.)

  2. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam

    Science.gov (United States)

    Alaie, Seyedhamidreza; Goettler, Drew F.; Jiang, Ying-Bing; Abbas, Khawar; Ghasemi Baboly, Mohammadhosein; Anjum, D. H.; Chaieb, S.; Leseman, Zayd C.

    2015-02-01

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties. In this work, Pt deposited by FIB is characterized thermally, structurally, and chemically. Its thermal conductivity is found to be substantially lower than the bulk value of Pt, 7.2 W m-1 K-1 versus 71.6 W m-1 K-1 at room temperature. The low thermal conductivity is attributed to the nanostructure of the material and its chemical composition. Pt deposited by FIB is shown, via aberration corrected TEM, to be a segregated mix of nanocrystalline Pt and amorphous C with Ga and O impurities. Ga impurities mainly reside in the Pt while O is homogeneously distributed throughout. The Ga impurity, small grain size of the Pt, and the amorphous carbon between grains are the cause for the low thermal conductivity of this material. Since Pt deposited by FIB is a common material for affixing samples, this information can be used to assess systematic errors in thermal characterization of different nanosamples. This application is also demonstrated by thermal characterization of two carbon nanofibers and a correction using the reported thermal properties of the Pt deposited by FIB.

  3. Energy distribution of secondary particles in ion beam deposition process of Ag: experiment, calculation and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Bundesmann, C.; Feder, R.; Lautenschlaeger, T.; Neumann, H. [Leibniz-Institute of Surface Modification, Leipzig (Germany)

    2015-12-15

    Ion beam sputter deposition allows tailoring the properties of the film-forming, secondary particles (sputtered target particles and backscattered primary particles) and, hence, thin film properties by changing ion beam (ion energy, ion species) and geometrical parameters (ion incidence angle, polar emission angle). In particular, the energy distribution of secondary particles and their influence on the ion beam deposition process of Ag was studied in dependence on process parameters. Energy-selective mass spectrometry was used to measure the energy distribution of sputtered and backscattered ions. The energy distribution of the sputtered particles shows, in accordance with theory, a maximum at low energy and an E{sup -2} decay for energies above the maximum. If the sum of incidence angle and polar emission angle is larger than 90 , additional contributions due to direct sputtering events occur. The energy distribution of the backscattered primary particles can show contributions by scattering at target particles and at implanted primary particles. The occurrence of these contributions depends again strongly on the scattering geometry but also on the primary ion species. The energy of directly sputtered and backscattered particles was calculated using equations based on simple two-particle-interaction whereas the energy distribution was simulated using the well-known Monte Carlo code TRIM.SP. In principal, the calculation and simulation data agree well with the experimental findings. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Thickness effect on properties of titanium film deposited by d.c. magnetron sputtering and electron beam evaporation techniques

    Indian Academy of Sciences (India)

    Nishat Arshi; Junqing Lu; Chan Gyu Lee; Jae Hong Yoon; Bon Heun Koo; Faheem Ahmed

    2013-10-01

    This paper reports effect of thickness on the properties of titanium (Ti) film deposited on Si/SiO2 (100) substrate using two different methods: d.c. magnetron sputtering and electron beam (e-beam) evaporation technique. The structural and morphological characterization of Ti film were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). XRD pattern revealed that the films deposited using d.c. magnetron sputtering have HCP symmetry with preferred orientation along (002) plane, while those deposited with e-beam evaporation possessed fcc symmetry with preferred orientation along (200) plane. The presence of metallic Ti was also confirmed by XPS analysis. FESEM images depicted that the finite sized grains were uniformly distributed on the surface and AFM micrographs revealed roughness of the film. The electrical resistivity measured using four-point probe showed that the film deposited using d.c. magnetron sputtering has lower resistivity of ∼13 cm than the film deposited using e-beam evaporation technique, i.e. ∼60 cm. The hardness of Ti films deposited using d.c. magnetron sputtering has lower value (∼7.9 GPa) than the film deposited using e-beam technique (∼9.4 GPa).

  5. Cobalt-based magnetic nanostructures grown by focused-electron-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Begun, Evgeniya; Schwenk, Johannes; Porrati, Fabrizio; Huth, Michael [Physikalisches Institut, Goethe-Universitaet, D-60438 Frankfurt am Main (Germany)

    2011-07-01

    The fabrication of magnetic nanostructures by means of the direct-writing technique focused-electron-beam-induced deposition (FEBID) is an alternative to more conventional lithographic methods. We have grown magnetic cobalt structures by FEBID using the precursor dicobaltoctacarbonyl Co{sub 2}(CO){sub 8}. The obtained structures have a large metal content of about 85 at.% as compared to other metal-based deposits grown by the same technique, such as tungsten-based structures with 34 at.% maximum tungsten content and platin-based structures with about 24 at.% maximum platin content. We present a growth strategy for cobalt structures with tunable metal content. In particular, we show the influence of different combinations of electron-beam energy and current, the dwell time and the refresh time on the deposit composition, which was determined by energy-dispersive X-ray spectroscopy (EDX) at 5 keV. First results of magnetotransport measurements on these cobalt-based structures are presented.

  6. Controlled growth of few-layer hexagonal boron nitride on copper foils using ion beam sputtering deposition.

    Science.gov (United States)

    Wang, Haolin; Zhang, Xingwang; Meng, Junhua; Yin, Zhigang; Liu, Xin; Zhao, Yajuan; Zhang, Liuqi

    2015-04-01

    Ion beam sputtering deposition (IBSD) is used to synthesize high quality few-layer hexagonal boron nitride (h-BN) on copper foils. Compared to the conventional chemical vapor deposition, the IBSD technique avoids the use of unconventional precursors and is much easier to control, which should be very useful for the large-scale production of h-BN in the future.

  7. Intense laser-driven proton beam energy deposition in compressed and uncompressed Cu foam

    Science.gov (United States)

    McGuffey, Christopher; Krauland, C. M.; Kim, J.; Beg, F. N.; Wei, M. S.; Habara, H.; Noma, S.; Ohtsuki, T.; Tsujii, A.; Yahata, K.; Yoshida, Y.; Uematsu, Y.; Nakaguchi, S.; Morace, A.; Yogo, A.; Nagatomo, H.; Tanaka, K.; Arikawa, Y.; Fujioka, S.; Shiraga, H.

    2016-10-01

    We investigated transport of intense proton beams from a petawatt laser in uncompressed or compressed Cu foam. The LFEX laser (1 kJ on target, 1.5 ps, 1053 nm, I >2×1019 W/cm2) irradiated a curved C foil to generate the protons. The foil was in an open cone 500 μm from the tip where the focused proton beam source was delivered to either of two Cu foam sample types: an uncompressed cylinder (1 mm L, 250 µm ϕ) , and a plastic-coated sphere (250 µm ϕ) that was first driven by GXII (9 beams, 330 J/beam, 1.3 ns, 527 nm) to achieve similar ρϕ to the cylinder sample's ρL as predicted by 2D radiation hydrodynamic simulations. Using magnetic spectrometers and a Thomson parabola, the proton spectra were measured with and without the Cu samples. When included, they were observed using Cu K-shell x-ray imaging and spectroscopy. This paper will present comparison of the experimentally measured Cu emission shape and proton spectrum changes due to deposition in the Cu with particle-in-cell simulations incorporating new stopping models. This work was made possible by laser time Awarded by the Japanese NIFS collaboration NIFS16KUGK107 and performed under the auspices of the US AFOSR YIP Award FA9550-14-1-0346.

  8. Ion-assisted doping of 2-6 compounds during physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bube, R H [Stanford Univ., CA (USA). Dept. of Materials Science and Engineering

    1990-07-01

    This report describes a research program to (1) investigate ion-assisted doping during chemical vapor deposition of CdTe and (2) determine the influence of co-depositing ionized dopant atoms in the growth and structural and photoelectronic properties of the deposited films. In p-CdTe homo-epitaxial films, we controlled doping up to about 6 {times} 10{sup 16} cm{sup {minus}3} and 2 {times} 10{sup 17} cm{sub {minus}3} or ion-assisted depositions with As and P ions, respectively. At a growth rate of approximately 0.1 {mu}m/min, a substrate temperature of 400{degree}C, and ion energy of 60 eV, a maximum doping density was found near an ion current of 0.6{mu}A/cm{sup 2}. Related studies included elucidating the role of low-energy ion damage in the ion-assisted doping process, and investigating the decrease in carrier density near the surface of p-CdTe upon heating in vacuum, H{sub 2}, or Ar. We demonstrate the ability to make carrier density profiles and to grade junctions, and we present preliminary results from polycrystalline p-CdTe films grown on graphite and alumina substrates. We also present solar cells prepared using the p-CdTe as the collector area and n-CdS as the window layer, and we examine their photovoltaic parameters for different carrier densities and configurations in p-CdTe. 91 refs., 44 figs., 5 tabs.

  9. Thermal/residual stress in an electron beam physical vapor deposited thermal barrier coating system

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, J.; Jordan, E.H.; Barber, B.; Gell, M. [Univ. of Connecticut, Storrs, CT (United States)

    1998-10-09

    Elastic-plastic finite element models are used to define the thermal/residual stress state responsible for the observed failure behavior of an electron beam physical vapor deposited yttria stabilized zirconia thermal barrier coating on a Pt-Al bond coat. The failures were observed to start at grain boundary ridges, some of which evolved into oxide filled cavities. Finite element models are made of the actual interface geometries through the use of metallographic sectioning and imaging processing. There is a one to one correspondence of calculated tension in the oxide layer and the observed localized damage. Purely elastic analysis failed to show some important tensile regions associated with the observed failure.

  10. Influence of laser power on deposition of the chromium atomic beam in laser standing wave

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    One-dimensional deposition of collimated Cr atomic beam focused by a near-resonant Gaussian standing-laser field with wavelength of 425.55 nm is examined from particle-optics approach by using an adaptive step size,fourth-order Runge-Kutta type algorithm.The influence of laser power on deposition of atoms in laser standing wave is discussed and the simulative result shows that the FWHM of nanometer stripe is 102 nm and contrast is 2:1 with laser power equal to 3 mW,the FWHM is 1.2 nm and contrast is 32:1 with laser power equal to 16 mW,but with laser power increase,equal to 50 mW,the nonmeter structure forms the multi-crests and exacerbates.

  11. Three-dimensional core-shell ferromagnetic nanowires grown by focused electron beam induced deposition

    Science.gov (United States)

    Pablo-Navarro, Javier; Magén, César; María de Teresa, José

    2016-07-01

    Functional nanostructured materials often rely on the combination of more than one material to confer the desired functionality or an enhanced performance of the device. Here we report the procedure to create nanoscale heterostructured materials in the form of core-shell nanowires by focused electron beam induced deposition (FEBID) technologies. In our case, three-dimensional (3D) nanowires (nanostructures to demonstrate that the morphology of the shell is conserved during Pt coating, the surface oxidation is suppressed or confined to the Pt layer, and the average magnetization of the core is strengthened up to 30%. The proposed approach paves the way to the fabrication of 3D FEBID nanostructures based on the smart alternate deposition of two or more materials combining different physical properties or added functionalities.

  12. Influence of laser power on deposition of the chromium atomic beam in laser standing wave

    Institute of Scientific and Technical Information of China (English)

    ZHANG WenTao; ZHU BaoHua; ZHANG BaoWu; LI TongBao

    2009-01-01

    One-dimensional deposition of collimated Cr atomic beam focused by a near-resonant Gaussian standing-laser field with wavelength of 425.55 nm is examined from particle-optics approach by using an adaptive step size, fourth-order Runge-Kutta type algorithm. The influence of laser power on depo-sition of atoms in laser standing wave is discussed and the simulative result shows that the FWHM of nanometer stripe is 102 nm and contrast is 2:1 with laser power equal to 3 mW, the FWHM is 1.2 nm and contrast is 32:1 with laser power equal to 16 mW, but with laser power increase, equal to 50 mW, the nonmeter structure forms the multi-crests and exacerbates.

  13. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Podestà, Alessandro, E-mail: alessandro.podesta@mi.infn.it, E-mail: pmilani@mi.infn.it; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo, E-mail: alessandro.podesta@mi.infn.it, E-mail: pmilani@mi.infn.it [Centro Interdisciplinare Materiali e Interfacce Nanostrutturati (C.I.Ma.I.Na.), Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy)

    2015-12-21

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO{sub 2}) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.

  14. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    Science.gov (United States)

    Podestà, Alessandro; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo

    2015-12-01

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO2) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.

  15. Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation

    Institute of Scientific and Technical Information of China (English)

    Jiang Ran; Meng Lingguo; Zhang Xijian; Hyung-Suk Jung; Cheol Seong Hwang

    2012-01-01

    Atomic layer deposition ofan Al2O3 dielectric on ultrathin graphite is studied in order to investigate the integration of a high k dielectric with graphite-based substrates.Electron beam irradiation on the graphite surface is followed by a standard atomic layer deposition of Al2O3.Improvement of the Al2O3 layer deposition morphology was observed when using this radiation exposure on graphite.This result may be attributed to the amorphous change of the graphite layers during electron beam irradiation.

  16. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    Energy Technology Data Exchange (ETDEWEB)

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M. [Argonne National Lab., IL (United States); Lin, Y.P. [Argonne National Lab., IL (United States)]|[Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science; Schultz, J.A. [Ionwerks, Inc., Houston, TX (United States); Schmidt, H. [Schmidt Instruments, Inc., Houston, TX (United States); Liu, Y.L. [Argonne National Lab., IL (United States)]|[Wisconsin Univ., Milwaukee, WI (United States). Dept. of Materials Science; Auciello, O. [Microelectronics Center of North Carolina, Research Triangle Park, NC (United States); Barr, T. [Wisconsin Univ., Milwaukee, WI (United States). Dept. of Materials Science; Chang, R.P.H. [Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science

    1992-08-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described.

  17. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    KAUST Repository

    Batra, Nitin M

    2015-10-09

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode–interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode–nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  18. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    Science.gov (United States)

    Batra, Nitin M.; Patole, Shashikant P.; Abdelkader, Ahmed; Anjum, Dalaver H.; Deepak, Francis L.; Costa, Pedro M. F. J.

    2015-11-01

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode-interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode-nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  19. Synthesis of photocatalytic TiO{sub 2} nano-coatings by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fraters, Bindikt D. [Photo Catalytic Synthesis Group, MESA+ Institute for Nanotechnology, Faculty of Science and Technology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Cavaliere, Emanuele [Dipartimento di Matematica e Fisica and Interdisciplinary Laboratories for Advanced Materials Physics (i-Lamp), Università Cattolica del Sacro Cuore, Via dei Musei 41, Brescia 25121 (Italy); Mul, Guido [Photo Catalytic Synthesis Group, MESA+ Institute for Nanotechnology, Faculty of Science and Technology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Gavioli, Luca, E-mail: luca.gavioli@unicatt.it [Dipartimento di Matematica e Fisica and Interdisciplinary Laboratories for Advanced Materials Physics (i-Lamp), Università Cattolica del Sacro Cuore, Via dei Musei 41, Brescia 25121 (Italy)

    2014-12-05

    Graphical abstract: - Highlights: • Synthesis of well-defined TiO{sub 2} coatings by supersonic cluster beam deposition. • Morphology is studied for samples annealed at 500, 650 and 800 °C by HR-SEM. • Anatase (500, 650 °C) and Rutile (800 °C) are observed by Raman spectroscopy. • Quartz support improved the coating activity by factor 4–6 compared to Si-wafer. • Silicon is detrimental for photocatalytic activity promoting charge recombination. - Abstract: In this paper we report on the photocatalytic behavior in gas phase propane oxidation of well-defined TiO{sub 2} nanoparticle (NP) coatings prepared via Supersonic Cluster Beam Deposition (SCBD) on Si-wafers and quartz substrates. The temperature dependent crystal phase of the coatings was analyzed by Raman spectroscopy, and the morphology by High Resolution-Scanning Electron Microscopy. SCBD deposition in the presence of oxygen enables the in situ synthesis of TiO{sub 2} layers of amorphous NP at room temperature. Adapting the deposition temperature to 500 °C or 650 °C leads to Anatase crystals of variable size ranges, and layers showing significant porosity. At 800 °C mainly Rutile is formed. Post annealing by wafer heating of the amorphous NP prepared at room temperature results in comparable temperature dependent phases and morphologies. Photocatalytic activity in propane oxidation was dependent on the morphology of the samples: the activity decreases as a function of increasing particle size. The presence of water vapor in the propane feed generally increased the activity of the wafer-heated samples, suggesting OH groups are not profoundly present on SCBD synthesized layers. In addition, a remarkable effect of the substrate (Si or Quartz) was observed: strong interaction between Si and TiO{sub 2} is largely detrimental for photocatalytic activity. The consequences of these findings for the application of SCBD to synthesize samples for fundamental (spectroscopic) study of photocatalysis are

  20. Ion assisted deposition with low-energy ions for applications in modern optics

    CERN Document Server

    Kennedy, M

    1999-01-01

    realised by a process adaptation with UV-absorbing films. A further focal point are antireflective coatings on alkali halides optics for high-power CO sub 2 -lasers. Ion assisted deposition of NaF-films at extremely low ion energies (E sub i sub o sub n approx 5 eV) qualifies antireflective coatings with minimal absorption (alpha approx 1.5 cm sup - sup 1), high short-pulse damage threshold (50%-LIDT approx 60J/cm sup 2) and improved degradational stability. Main objective of this work is the development of ion assisted deposition processes without additional substrate heating for applications in precision and laser optics. New low-energy ion sources with ion energies below 100 eV were employed for the research work. Starting point of the process development are basic investigations on the ion assisted evaporation of fluoride and oxide thin film materials. The optimisation of the coating processes is primary done with the help of optical characterisation methods (spectral photometry, laser calorimetry, measur...

  1. Synthesis of nanowires via helium and neon focused ion beam induced deposition with the gas field ion microscope.

    Science.gov (United States)

    Wu, H M; Stern, L A; Chen, J H; Huth, M; Schwalb, C H; Winhold, M; Porrati, F; Gonzalez, C M; Timilsina, R; Rack, P D

    2013-05-03

    The ion beam induced nanoscale synthesis of platinum nanowires using the trimethyl (methylcyclopentadienyl)platinum(IV) (MeCpPt(IV)Me3) precursor is investigated using helium and neon ion beams in the gas field ion microscope. The He(+) beam induced deposition resembles material deposited by electron beam induced deposition with very small platinum nanocrystallites suspended in a carbonaceous matrix. The He(+) deposited material composition was estimated to be 16% Pt in a matrix of amorphous carbon with a large room-temperature resistivity (∼3.5 × 10(4)-2.2 × 10(5) μΩ cm) and temperature-dependent transport behavior consistent with a granular material in the weak intergrain tunnel coupling regime. The Ne(+) deposited material has comparable composition (17%), however a much lower room-temperature resistivity (∼600-3.0 × 10(3) μΩ cm) and temperature-dependent electrical behavior representative of strong intergrain coupling. The Ne(+) deposited nanostructure has larger platinum nanoparticles and is rationalized via Monte Carlo ion-solid simulations which show that the neon energy density deposited during growth is much larger due to the smaller ion range and is dominated by nuclear stopping relative to helium which has a larger range and is dominated by electronic stopping.

  2. High fluence deposition of polyethylene glycol films at 1064 nm by matrix assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Purice, Andreea; Schou, Jørgen; Kingshott, P.;

    2007-01-01

    Matrix assisted pulsed laser evaporation (MAPLE) has been applied for deposition of thin polyethylene glycol (PEG) films with infrared laser light at 1064 nm. We have irradiated frozen targets (of 1 wt.% PEG dissolved in water) and measured the deposition rate in situ with a quartz crystal 2...

  3. Electron postgrowth irradiation of platinum-containing nanostructures grown by electron-beam-induced deposition from Pt(PF3)4

    NARCIS (Netherlands)

    Botman, A.; Hagen, C.W.; Li, J.; Thiel, B.L.; Dunn, K.A.; Mulders, J.J.L.; Randolph, S.; Toth, M.

    2009-01-01

    The material grown in a scanning electron microscope by electron beam-induced deposition (EBID) using Pt(PF3)4 precursor is shown to be electron beam sensitive. The effects of deposition time and postgrowth electron irradiation on the microstructure and resistivity of the deposits were assessed by t

  4. Direct-write deposition and focused-electron-beam-induced purification of gold nanostructures.

    Science.gov (United States)

    Belić, Domagoj; Shawrav, Mostafa M; Gavagnin, Marco; Stöger-Pollach, Michael; Wanzenboeck, Heinz D; Bertagnolli, Emmerich

    2015-02-04

    Three-dimensional gold (Au) nanostructures offer promise in nanoplasmonics, biomedical applications, electrochemical sensing and as contacts for carbon-based electronics. Direct-write techniques such as focused-electron-beam-induced deposition (FEBID) can provide such precisely patterned nanostructures. Unfortunately, FEBID Au traditionally suffers from a high nonmetallic content and cannot meet the purity requirements for these applications. Here we report exceptionally pure pristine FEBID Au nanostructures comprising submicrometer-large monocrystalline Au sections. On the basis of high-resolution transmission electron microscopy results and Monte Carlo simulations of electron trajectories in the deposited nanostructures, we propose a curing mechanism that elucidates the observed phenomena. The in situ focused-electron-beam-induced curing mechanism was supported by postdeposition ex situ curing and, in combination with oxygen plasma cleaning, is utilized as a straightforward purification method for planar FEBID structures. This work paves the way for the application of FEBID Au nanostructures in a new generation of biosensors and plasmonic nanodevices.

  5. Graphene crystal growth by thermal precipitation of focused ion beam induced deposition of carbon precursor via patterned-iron thin layers

    Directory of Open Access Journals (Sweden)

    Rius Gemma

    2014-01-01

    Full Text Available Recently, relevant advances on graphene as a building block of integrated circuits (ICs have been demonstrated. Graphene growth and device fabrication related processing has been steadily and intensively powered due to commercial interest; however, there are many challenges associated with the incorporation of graphene into commercial applications which includes challenges associated with the synthesis of this material. Specifically, the controlled deposition of single layer large single crystal graphene on arbitrary supports, is particularly challenging. Previously, we have reported the first demonstration of the transformation of focused ion beam induced deposition of carbon (FIBID-C into patterned graphitic layers by metal-assisted thermal treatment (Ni foils. In this present work, we continue exploiting the FIBID-C approach as a route for graphene deposition. Here, thin patterned Fe layers are used for the catalysis of graphenization and graphitization. We demonstrate the formation of high quality single and few layer graphene, which evidences, the possibility of using Fe as a catalyst for graphene deposition. The mechanism is understood as the minute precipitation of atomic carbon after supersaturation of some iron carbides formed under a high temperature treatment. As a consequence of the complete wetting of FIBID-C and patterned Fe layers, which enable graphene growth, the as-deposited patterns do not preserve their original shape after the thermal treatment

  6. Single palladium nanowire growth in place assisted by dielectrophoresis and focused ion beam.

    Science.gov (United States)

    La Ferrara, Vera; Alfano, Brigida; Massera, Ettore; Di Francia, Girolamo

    2009-05-01

    Here we report, for the first time, on the combined use of Focused Ion Beam and Dielectrophoresis techniques for the fabrication of a nanodevice whose operating mechanism relies on a single palladium nanowire. Focused Ion Beam is used to deposit, without photolithographic masks, platinum microelectrodes on a silicon/silicon nitride substrate. Dielectrophoresis is employed for assembling the palladium nanowire, starting from a saturated palladium particles solution, and precisely positioning it between the nanocontacts. The nanodevice works as a hydrogen sensor, confirming the reliability of technology. Its electrical response has been recorded, at room temperature, in a dynamic environment, where different hydrogen concentrations, from 0.1% to 4% in dry air, have been introduced. Its sensitivity, towards 0.1% to 1% gas concentrations in dry air, has been calculated, too.

  7. Thin-film deposition method assisted by mid-infrared-FEL

    CERN Document Server

    Yasumoto, M; Ishizu, A; Tsubouchi, N; Awazu, K; Umesaki, N

    2001-01-01

    We propose the novel application of the mid-infrared (MIR) FEL to the thin-film fabrication process. During the application, a substrate on which a thin film is being fabricated by a conventional method is simultaneously irradiated by the MIR FEL. The MIR FEL induces the fabricated molecules into the excited state of the stretching vibration energy, when the photon energy of the MIR FEL corresponds to one of the molecules. Therefore, the method can assist the thin-film fabrication quasi-independent of the substrate temperature. The method has the advantages of application on a temperature sensitive substrate and selective fabrication due to the tunable wavelength of the MIR FEL. In order to realize the method, we developed two thin film fabrication devices; an MIR FEL assisted RF sputtering device and an MIR FEL assisted laser ablation deposition device. For the method, the intensity of the assisted MIR FEL is an important problem. Thus the cross-section of the MIR FEL intensity profile is shown and the propa...

  8. Laser metal deposition with spatial variable orientation based on hollow-laser beam with internal powder feeding technology

    Science.gov (United States)

    Shi, Tuo; Lu, Bingheng; Shi, Shihong; Meng, Weidong; Fu, Geyan

    2017-02-01

    In this study, a hollow-laser beam with internal powder feeding (HLB-IPF) head is applied to achieve non-horizontal cladding and deposition of overhanging structure. With the features of this head such as uniform scan energy distribution, thin and straight spraying of the powder beam, the deposition in spatial variable orientation is conducted using a 6-axis robot. During the deposition process the head keeps tangential to the growth direction of the part. In the experiment, a "vase" shaped metal part with overhanging structure is successfully deposited, and the largest overhanging angle achieves 80° to the vertical direction. The "step effect" between cladding layers is completely eliminated with the best surface roughness of Ra=3.864 μm. Cross section of cladding layers with unequal height are deposited for angle change. Test results indicate that the formed part has uniform wall thickness, fine microstructure and high microhardness.

  9. Biomolecular papain thin films grown by matrix assisted and conventional pulsed laser deposition: A comparative study

    Science.gov (United States)

    György, E.; Pérez del Pino, A.; Sauthier, G.; Figueras, A.

    2009-12-01

    Biomolecular papain thin films were grown both by matrix assisted pulsed laser evaporation (MAPLE) and conventional pulsed laser deposition (PLD) techniques with the aid of an UV KrF∗ (λ =248 nm, τFWHM≅20 ns) excimer laser source. For the MAPLE experiments the targets submitted to laser radiation consisted on frozen composites obtained by dissolving the biomaterial powder in distilled water at 10 wt % concentration. Conventional pressed biomaterial powder targets were used in the PLD experiments. The surface morphology of the obtained thin films was studied by atomic force microscopy and their structure and composition were investigated by Fourier transform infrared spectroscopy. The possible physical mechanisms implied in the ablation processes of the two techniques, under comparable experimental conditions were identified. The results showed that the growth mode, surface morphology as well as structure of the deposited biomaterial thin films are determined both by the incident laser fluence value as well as target preparation procedure.

  10. Study on absorbance and laser damage threshold of HfO2 films prepared by ion-assisted reaction deposition

    Institute of Scientific and Technical Information of China (English)

    Dawei Zhang(张大伟); Shuhai Fan(范树海); Weidong Gao(高卫东); Hongbo He(贺洪波); Yingjian Wang(王英剑); Jianda Shao(邵建达); Zhengxiu Fan(范正修); Haojie Sun(孙浩杰)

    2004-01-01

    Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different deposition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold.

  11. Investigations of high mobility single crystal chemical vapor deposition diamond for radiotherapy photon beam monitoring

    Science.gov (United States)

    Tromson, D.; Descamps, C.; Tranchant, N.; Bergonzo, P.; Nesladek, M.; Isambert, A.

    2008-03-01

    The intrinsic properties of diamond make this material theoretically very suitable for applications in medical physics. Until now ionization chambers have been fabricated from natural stones and are commercialized by PTW, but their fairly high costs and long delivery times have often limited their use in hospital. The properties of commercialized intrinsic polycrystalline diamond were investigated in the past by many groups. The results were not completely satisfactory due to the nature of the polycrystalline material itself. In contrast, the recent progresses in the growth of high mobility single crystal synthetic diamonds prepared by chemical vapor deposition (CVD) technique offer new alternatives. In the framework of the MAESTRO project (Methods and Advanced Treatments and Simulations for Radio Oncology), the CEA-LIST is studying the potentialities of synthetic diamond for new techniques of irradiation such as intensity modulated radiation therapy. In this paper, we present the growth and characteristics of single crystal diamond prepared at CEA-LIST in the framework of the NoRHDia project (Novel Radiation Hard CVD Diamond Detector for Hadrons Physics), as well as the investigations of high mobility single crystal CVD diamond for radiotherapy photon beam monitoring: dosimetric analysis performed with the single crystal diamond detector in terms of stability and repeatability of the response signal, signal to noise ratio, response speed, linearity of the signal versus the absorbed dose, and dose rate. The measurements performed with photon beams using radiotherapy facilities demonstrate that single crystal CVD diamond is a good alternative for air ionization chambers for beam quality control.

  12. Electron beam deposition and characterization of thin film Ti-Ni for shape memory applications

    Institute of Scientific and Technical Information of China (English)

    NOH Hae-Yong; JEE Kwang-Koo; LEE Kyu-Hwan; LEE Young-Kook

    2006-01-01

    Thin film of Ti-Ni alloy has a potential to perform the microactuation functions required in the microelectromechanical system (MEMS).It is essential, however, to have good uniformity in both chemical composition and thickness to realize its full potential as an active component of MEMS devices.Electron beam evaporation technique was employed in this study to fabricate the thin films of Ti-Ni alloy on different substrates.The targets used for the evaporation were first prepared by electron beam melting.The uniformity of composition and microstructure of the thin films were characterized by electron probe microanalysis (EPMA), Auger electron spectroscopy (AES), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM).The mechanical property of the thin films was evaluated by the nano-indentation test.The martensitic transformation temperature was measured by differential scanning calorimetry (DSC).It is confirmed that the chemical composition of deposited thin films is identical to that of the target materials.Furthermore, results from depth profiling of the chemical composition variation reveal that the electron beam evaporation process yields better compositional homogeneity than other conventional methods such as sputtering and thermal evaporation.Microstructural observation by TEM shows that nanometer size precipitates are preferentially distributed along the grain boundaries of a few micron size grains.The hardness and elastic modulus of thin films decreases with an increase in Ti contents.

  13. Development of plasma assisted thermal vapor deposition technique for high-quality thin film

    Science.gov (United States)

    Lee, Kang-Il; Choi, Yong Sup; Park, Hyun Jae

    2016-12-01

    The novel technique of Plasma-Assisted Vapor Deposition (PAVD) is developed as a new deposition method for thin metal films. The PAVD technique yields a high-quality thin film without any heating of the substrate because evaporated particles acquire energy from plasma that is confined to the inside of the evaporation source. Experiments of silver thin film deposition have been carried out in conditions of pressure lower than 10-3 Pa. Pure silver plasma generation is verified by the measurement of the Ag-I peak using optical emission spectroscopy. A four point probe and a UV-VIS spectrophotometer are used to measure the electrical and optical properties of the silver film that is deposited by PAVD. For an ultra-thin silver film with a thickness of 6.5 nm, we obtain the result of high-performance silver film properties, including a sheet resistance 75%. The PAVD-film properties show a low sheet resistance of 30% and the same transmittance with conventional thermal evaporation film. In the PAVD source, highly energetic particles and UV from plasma do not reach the substrate because the plasma is completely shielded by the optimized nozzle of the crucible. This new PAVD technique could be a realistic solution to improve the qualities of transparent electrodes for organic light emission device fabrication without causing damage to the organic layers.

  14. Ion beam sputter deposition of Ge films: Influence of process parameters on film properties

    Energy Technology Data Exchange (ETDEWEB)

    Bundesmann, C., E-mail: carsten.bundesmann@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig (Germany); Feder, R. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig (Germany); Wunderlich, R.; Teschner, U.; Grundmann, M. [Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig (Germany); Neumann, H. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig (Germany)

    2015-08-31

    Several sets of Ge films were grown by ion beam sputter deposition under systematic variation of ion beam parameters (ion species and ion energy) and geometrical parameters (ion incidence angle and polar emission angle). The films were characterized concerning thickness, growth rate, mass density, structural properties and composition. The film thicknesses show a cosine-like angular distribution, and the growth rates were found to increase with increasing ion incidence angle and ion energy. All films are amorphous and the average mass density was found to be (4.3 ± 0.2) g/cm{sup 3}, without a systematic relation to ion energy and geometrical parameters. Slightly higher mass densities were found for Ge films grown by sputtering with Xe than for sputtering with Ar. The Ge films contain a fraction of inert gas atoms from backscattered primary particles. This fraction is found to be higher for sputtering with Ar than for sputtering with Xe. The fraction of inert gas atoms increases with increasing polar emission angle and increasing ion incidence angle. Raman scattering experiments revealed also systematic shifts of the characteristic Raman mode. The shifts are tentatively assigned to the change of the Ge particle densities caused by the incorporation of inert gas particles. There seem to be also slight changes in short range ordering. The experimental data are discussed with respect to the known energy and angular distributions of the sputtered and backscattered particles. - Highlights: • Ion beam sputter deposition under systematic variation of process parameters • Thickness, growth rate, mass density, composition, structure, phonon properties • All germanium films are amorphous with small variations in mass density. • Incorporation of considerable amount of inert process gas • Vibrational properties correlate with composition.

  15. Gas-assisted electron-beam-induced nanopatterning of high-quality titanium oxide

    Science.gov (United States)

    Riazanova, A. V.; Costanzi, B. N.; Aristov, A. I.; Rikers, Y. G. M.; Mulders, J. J. L.; Kabashin, A. V.; Dahlberg, E. Dan; Belova, L. M.

    2016-03-01

    Electron-beam-induced deposition of titanium oxide nanopatterns is described. The precursor is titanium tetra-isopropoxide, delivered to the deposition point through a needle and mixed with oxygen at the same point via a flow through a separate needle. The depositions are free of residual carbon and have an EDX determined stoichiometry of TiO2.2. High resolution transmission electron microscopy and Raman spectroscopy studies reveal an amorphous structure of the fabricated titanium oxide. Ellipsometric characterization of the deposited material reveals a refractive index of 2.2-2.4 RIU in the spectral range of 500-1700 nm and a very low extinction coefficient (lower than 10-6 in the range of 400-1700 nm), which is consistent with high quality titanium oxide. The electrical resistivity of the titanium oxide patterned with this new process is in the range of 10-40 GΩ cm and the measured breakdown field is in the range of 10-70 V μm-1. The fabricated nanopatterns are important for a variety of applications, including field-effect transistors, memory devices, MEMS, waveguide structures, bio- and chemical sensors.

  16. Fabrication and characterization of kesterite Cu2ZnSnS4 thin films deposited by electrostatic spray assisted vapour deposition method

    OpenAIRE

    Liu, J. P.; Choy, Kwang-Leong; Placidi, M.; López-García, J.; Saucedo, Edgardo; Colombara, Diego; Robert, Erika

    2014-01-01

    Most of the high efficiency kesterite solar cells are fabricated by vacuum or hydrazine-based solution methods which have drawbacks, such as high cost, high toxicity or explosivity. In our contribution, an alternative non-vacuum and environmental friendly deposition technology called electrostatic spray assisted vapour deposition (ESAVD) has been used for the cost-effective growth of Cu2ZnSnS4 (CZTS) thin films with well controlled structure and composition. CZTS films have been characterized...

  17. Influence of deposition rate on the properties of ZrO2 thin films prepared in electron beam evaporation method

    Institute of Scientific and Technical Information of China (English)

    Dongping Zhang(张东平); Meiqiong Zhan(占美琼); Ming Fang(方明); Hongbo He(贺洪波); Jianda Shao(邵建达); Zhengxiu Fan(范正修)

    2004-01-01

    ZrO2 thin films were prepared in electron beam thermal evaporation method. And the deposition rate changed from 1.3 to 6.3 nm/s in our study. X-ray diffractometer and spectrophotometer were employed to characterize the films. X-ray diffraction (XRD) spectra pattern shows that films structure changed from amorphous to polycrystalline with deposition rate increasing. The results indicate that internal stresses of the films are compressive in most case. Thin films deposited in our study are inhomogeneous, and the inhomogeneity is enhanced with the deposition rate increasing.

  18. Structural transitions in electron beam deposited Co–carbonyl suspended nanowires at high electrical current densities

    Directory of Open Access Journals (Sweden)

    Gian Carlo Gazzadi

    2015-06-01

    Full Text Available Suspended nanowires (SNWs have been deposited from Co–carbonyl precursor (Co2(CO8 by focused electron beam induced deposition (FEBID. The SNWs dimensions are about 30–50 nm in diameter and 600–850 nm in length. The as-deposited material has a nanogranular structure of mixed face-centered cubic (FCC and hexagonal close-packed (HCP Co phases, and a composition of 80 atom % Co, 15 atom % O and 5 atom % C, as revealed by transmission electron microscopy (TEM analysis and by energy-dispersive X-ray (EDX spectroscopy, respectively. Current (I–voltage (V measurements with current densities up to 107 A/cm2 determine different structural transitions in the SNWs, depending on the I–V history. A single measurement with a sudden current burst leads to a polycrystalline FCC Co structure extended over the whole wire. Repeated measurements at increasing currents produce wires with a split structure: one half is polycrystalline FCC Co and the other half is graphitized C. The breakdown current density is found at 2.1 × 107 A/cm2. The role played by resistive heating and electromigration in these transitions is discussed.

  19. Structural transitions in electron beam deposited Co-carbonyl suspended nanowires at high electrical current densities.

    Science.gov (United States)

    Gazzadi, Gian Carlo; Frabboni, Stefano

    2015-01-01

    Suspended nanowires (SNWs) have been deposited from Co-carbonyl precursor (Co2(CO)8) by focused electron beam induced deposition (FEBID). The SNWs dimensions are about 30-50 nm in diameter and 600-850 nm in length. The as-deposited material has a nanogranular structure of mixed face-centered cubic (FCC) and hexagonal close-packed (HCP) Co phases, and a composition of 80 atom % Co, 15 atom % O and 5 atom % C, as revealed by transmission electron microscopy (TEM) analysis and by energy-dispersive X-ray (EDX) spectroscopy, respectively. Current (I)-voltage (V) measurements with current densities up to 10(7) A/cm(2) determine different structural transitions in the SNWs, depending on the I-V history. A single measurement with a sudden current burst leads to a polycrystalline FCC Co structure extended over the whole wire. Repeated measurements at increasing currents produce wires with a split structure: one half is polycrystalline FCC Co and the other half is graphitized C. The breakdown current density is found at 2.1 × 10(7) A/cm(2). The role played by resistive heating and electromigration in these transitions is discussed.

  20. High-speed deposition of titanium carbide coatings by laser-assisted metal–organic CVD

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Yansheng [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tu, Rong, E-mail: turong@whut.edu.cn [State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Goto, Takashi [Institute for Materials Research, Tohoku University, Aoba-ku, 2-1-1 Katahira, Sendai 980-8577 (Japan)

    2013-08-01

    Graphical abstract: - Highlights: • A semiconductor laser was first used to prepare wide-area LCVD-TiC{sub x} coatings. • The effect of laser power for the deposition of TiC{sub x} coatings was discussed. • TiC{sub x} coatings showed a columnar cross section and a dense surface texture. • TiC{sub x} coatings had a 1–4 order lower laser density than those of previous reports. • This study gives the possibility of LCVD applying on the preparation of TiC{sub x} coating. - Abstract: A semiconductor laser-assisted chemical vapor deposition (LCVD) of titanium carbide (TiC{sub x}) coatings on Al{sub 2}O{sub 3} substrate using tetrakis (diethylamido) titanium (TDEAT) and C{sub 2}H{sub 2} as source materials were investigated. The influences of laser power (P{sub L}) and pre-heating temperature (T{sub pre}) on the microstructure and deposition rate of TiC{sub x} coatings were examined. Single phase of TiC{sub x} coatings were obtained at P{sub L} = 100–200 W. TiC{sub x} coatings had a cauliflower-like surface and columnar cross section. TiC{sub x} coatings in the present study had the highest R{sub dep} (54 μm/h) at a relative low T{sub dep} than those of conventional CVD-TiC{sub x} coatings. The highest volume deposition rate (V{sub dep}) of TiC{sub x} coatings was about 4.7 × 10{sup −12} m{sup 3} s{sup −1}, which had 3–10{sup 5} times larger deposition area and 1–4 order lower laser density than those of previous LCVD using CO{sub 2}, Nd:YAG and argon ion laser.

  1. Results of the studies on energy deposition in IR6 superconducting magnets from continuous beam loss on the TCDQ system

    CERN Document Server

    Bracco, C; Presland, A; Redaelli, S; Sarchiapone, L; Weiler, T

    2007-01-01

    A single sided mobile graphite diluter block TCDQ, in combination with a two-sided secondary collimator TCS and an iron shield TCDQM, will be installed in front of the superconducting quadrupole Q4 magnets in IR6, in order to protect it and other downstream LHC machine elements from destruction in the event of a beam dump that is not synchronised with the abort gap. The TCDQ will be positioned close to the beam, and will intercept the particles from the secondary halo during low beam lifetime. Previous studies (1-4) have shown that the energy deposited in the Q4 magnet coils can be close to or above the quench limit. In this note the results of the latest FLUKA energy deposition simulations for Beam 2 are described, including an upgrade possibility for the TCDQ system with an additional shielding device. The results are discussed in the context of the expected performance levels for the different phases of LHC operation.

  2. High aspect ratio AFM Probe processing by helium-ion-beam induced deposition.

    Science.gov (United States)

    Onishi, Keiko; Guo, Hongxuan; Nagano, Syoko; Fujita, Daisuke

    2014-11-01

    A Scanning Helium Ion Microscope (SHIM) is a high resolution surface observation instrument similar to a Scanning Electron Microscope (SEM) since both instruments employ finely focused particle beams of ions or electrons [1]. The apparent difference is that SHIMs can be used not only for a sub-nanometer scale resolution microscopic research, but also for the applications of very fine fabrication and direct lithography of surfaces at the nanoscale dimensions. On the other hand, atomic force microscope (AFM) is another type of high resolution microscopy which can measure a three-dimensional surface morphology by tracing a fine probe with a sharp tip apex on a specimen's surface.In order to measure highly uneven and concavo-convex surfaces by AFM, the probe of a high aspect ratio with a sharp tip is much more necessary than the probe of a general quadrangular pyramid shape. In this paper we report the manufacture of the probe tip of the high aspect ratio by ion-beam induced gas deposition using a nanoscale helium ion beam of SHIM.Gas of platinum organic compound was injected into the sample surface neighborhood in the vacuum chamber of SHIM. The decomposition of the gas and the precipitation of the involved metal brought up a platinum nano-object in a pillar shape on the normal commercial AFM probe tip. A SHIM system (Carl Zeiss, Orion Plus) equipped with the gas injection system (OmniProbe, OmniGIS) was used for the research. While the vacuum being kept to work, we injected platinum organic compound ((CH3)3(CH3C5H4)Pt) into the sample neighborhood and irradiated the helium ion beam with the shape of a point on the apex of the AFM probe tip. It is found that we can control the length of the Pt nano-pillar by irradiation time of the helium ion beam. The AFM probe which brought up a Pt nano-pillar is shown in Figure 1. It is revealed that a high-aspect-ratio Pt nano-pillar of ∼40nm diameter and up to ∼2000 nm length can be grown. In addition, for possible heating

  3. Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    David Adolph

    2016-08-01

    Full Text Available We demonstrate crack-free ZnO/GaN distributed Bragg reflectors (DBRs grown by hybrid plasma-assisted molecular beam epitaxy using the same growth chamber for continuous growth of both ZnO and GaN without exposure to air. This is the first time these ZnO/GaN DBRs have been demonstrated. The Bragg reflectors consisted up to 20 periods as shown with cross-sectional transmission electron microscopy. The maximum achieved reflectance was 77% with a 32 nm wide stopband centered at 500 nm. Growth along both (0001 and (000 1 ̄ directions was investigated. Low-temperature growth as well as two-step low/high-temperature deposition was carried out where the latter method improved the DBR reflectance. Samples grown along the (0001 direction yielded a better surface morphology as revealed by scanning electron microscopy and atomic force microscopy. Reciprocal space maps showed that ZnO(000 1 ̄ /GaN reflectors are relaxed whereas the ZnO(0001/GaN DBRs are strained. The ability to n-type dope ZnO and GaN makes the ZnO(0001/GaN DBRs interesting for various optoelectronic cavity structures.

  4. Processing and characterization of high temperature superconductor thin films deposited by electron beam co-evaporation

    Science.gov (United States)

    Huh, Jeong-Uk

    Ever since the high temperature superconductors (HTS) were discovered in the late 1980s, there have been enormous efforts to make this into applications such as power transmission cables, transformers, motors and generators. However, many obstacles in performance and high manufacturing cost made this difficult. The first generation HTS wires had low critical current density and were expensive to fabricate. The motivation of this research was to make high performance and low cost second generation HTS coated conductor. Electron beam co-evaporation technique was used to deposit YBCO(YBa2Cu3O7-x ) film at a high rate (10nm/s and higher) on single crystals and metal tapes. The oxygen pressure at the stage of depositing Y, Ba, Cu was 5x10 -5 Torr and the process temperature was 810-840°C. In-situ Fourier Transform Infrared spectroscopy (FTIR) was used to monitor the optical properties of the YBCO during and after deposition. The deposit transformed to a glassy amorphous mixture of Y, Ba and Cu at 3 mTorr of oxygen. YBCO crystallization occurred after extra oxygen was applied to several Torr. FTIR showed almost the same signature during the formation of YBCO and liquid Ba-Cu-O during deposition, which indicates the liquid played an important role in determining the properties of YBCO in terms of providing epitaxy and fast transport of atoms to nucleate on the film-metal interface. The transformation was very rapid---seconds to minutes, compared to minutes to hours for other post-reaction processes. The oxygen partial pressure and the rate of oxidation (supersaturation) in the liquid region defined in the YBCO phase stability diagram determined the electrical and microstructural properties. In-situ X-ray diffraction heating stage with ambient control was utilized to study this supersaturation effect and explore the temperature-pressure space during YBCO growth. With all the information gathered from FTIR and XRD in-situ experiments and also with nano-engineering during

  5. The role of low-energy electrons in focused electron beam induced deposition: four case studies of representative precursors

    Directory of Open Access Journals (Sweden)

    Rachel M. Thorman

    2015-09-01

    Full Text Available Focused electron beam induced deposition (FEBID is a single-step, direct-write nanofabrication technique capable of writing three-dimensional metal-containing nanoscale structures on surfaces using electron-induced reactions of organometallic precursors. Currently FEBID is, however, limited in resolution due to deposition outside the area of the primary electron beam and in metal purity due to incomplete precursor decomposition. Both limitations are likely in part caused by reactions of precursor molecules with low-energy (3, Pt(PF34, Co(CO3NO, and W(CO6. Through these case studies, it is evident that this combination of studies can provide valuable insight into potential mechanisms governing deposit formation in FEBID. Although further experiments and new approaches are needed, these studies are an important stepping-stone toward better understanding the fundamental physics behind the deposition process and establishing design criteria for optimized FEBID precursors.

  6. The Formation of Nanocrystalline Diamond Coating on WC Deposited by Microwave Assisted Plasma CVD

    Science.gov (United States)

    Toff, M. R. M.; Hamzah, E.; Purniawan, A.

    2010-03-01

    Diamond is one form of carbon structure. The extreme hardness and high chemical resistant of diamond coatings determined that many works on this area relate to coated materials for tribological applications in biomedicine, as mechanical seals or cutting tools for hard machining operations. In the work, nanocrystalline diamond (NCD) coated tungsten carbide (WC) have been deposited by microwave assisted plasma chemical vapor deposition (MAPCVD) from CH4/H2 mixtures. Morphology of NCD was investigated by using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The quality of NCD is defined as ratio between diamond and non diamond and also full width at half maximum (FWHM) was determined using Raman spectra. The result found that the NCD structure can be deposited on WC surface using CH4/H2 gas mixture with grain size ˜20 nm to 100 nm. Increase %CH4 concentration due to increase the nucleation of NCD whereas decrease the quality of diamond. Based on Raman spectra, the quality of NCD is in the range ˜98.82-99.01% and 99.56-99.75% for NCD and microcrystalline (MCD), respectively. In addition, FWHM of NCD is high than MCD in the range of 8.664-62.24 cm-1 and 4.24-5.05 cm-1 for NCD and MCD respectively that indicate the crystallineity of NCD is smaller than MCD.

  7. Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers.

    Science.gov (United States)

    Andringa, Anne-Marije; Perrotta, Alberto; de Peuter, Koen; Knoops, Harm C M; Kessels, Wilhelmus M M; Creatore, Mariadriana

    2015-10-14

    Encapsulation of organic (opto-)electronic devices, such as organic light-emitting diodes (OLEDs), photovoltaic cells, and field-effect transistors, is required to minimize device degradation induced by moisture and oxygen ingress. SiNx moisture permeation barriers have been fabricated using a very recently developed low-temperature plasma-assisted atomic layer deposition (ALD) approach, consisting of half-reactions of the substrate with the precursor SiH2(NH(t)Bu)2 and with N2-fed plasma. The deposited films have been characterized in terms of their refractive index and chemical composition by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier-transform infrared spectroscopy (FTIR). The SiNx thin-film refractive index ranges from 1.80 to 1.90 for films deposited at 80 °C up to 200 °C, respectively, and the C, O, and H impurity levels decrease when the deposition temperature increases. The relative open porosity content of the layers has been studied by means of multisolvent ellipsometric porosimetry (EP), adopting three solvents with different kinetic diameters: water (∼0.3 nm), ethanol (∼0.4 nm), and toluene (∼0.6 nm). Irrespective of the deposition temperature, and hence the impurity content in the SiNx films, no uptake of any adsorptive has been observed, pointing to the absence of open pores larger than 0.3 nm in diameter. Instead, multilayer development has been observed, leading to type II isotherms that, according to the IUPAC classification, are characteristic of nonporous layers. The calcium test has been performed in a climate chamber at 20 °C and 50% relative humidity to determine the intrinsic water vapor transmission rate (WVTR) of SiNx barriers deposited at 120 °C. Intrinsic WVTR values in the range of 10(-6) g/m2/day indicate excellent barrier properties for ALD SiNx layers as thin as 10 nm, competing with that of state-of-the-art plasma-enhanced chemical vapor-deposited SiNx layers of a few hundred

  8. Characterisation of molecular thin films grown by organic molecular beam deposition

    CERN Document Server

    Bayliss, S M

    2000-01-01

    This work concerns the growth and characterisation of molecular thin films in an ultra high vacuum regime by organic molecular beam deposition (OMBD). Films of three different molecular materials are grown, namely free base phthalocyanine (H sub 2 Pc), perylene 3,4,9,10-tetracarboxylic dianhydride (PTCDA) and aluminium tris-8-hydroxyquinoline (Alq sub 3). The relationship between the growth parameters such as film thickness, growth rate, and substrate temperature during and after growth, and the structural, optical and morphological properties of the film are investigated. These investigations are carried out using various ex-situ techniques. X-ray diffraction, Raman spectroscopy and electronic absorption spectroscopy are used to probe the bulk film characteristics, whilst Nomarski microscopy and atomic force microscopy are used to study the surface morphology. Three different levels of influence of the growth parameters on the film properties are observed. In the case of H sub 2 Pc, two crystal phases are fo...

  9. Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yuhan, E-mail: yw9ep@virginia.edu; Kittiwatanakul, Salinporn; Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Comes, Ryan B. [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Wolf, Stuart A. [Department of Materials Science and Engineering and Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States)

    2015-03-15

    Epitaxial NbO{sub 2} thin films were synthesized on Al{sub 2}O{sub 3} (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO{sub 2}. Through XPS, it was found that there was a ∼1.3 nm thick Nb{sub 2}O{sub 5} layer on the surface and the bulk of the thin film was NbO{sub 2}. The epitaxial relationship between the NbO{sub 2} film and the substrate was determined. Electrical transport measurement was measured up to 400 K, and the conduction mechanism was discussed.

  10. Methods for assisting recovery of damaged brain and spinal cord using arrays of X-Ray microplanar beams

    Science.gov (United States)

    Dilmanian, F. Avraham; McDonald, III, John W.

    2007-12-04

    A method of assisting recovery of an injury site of brain or spinal cord injury includes providing a therapeutic dose of X-ray radiation to the injury site through an array of parallel microplanar beams. The dose at least temporarily removes regeneration inhibitors from the irradiated regions. Substantially unirradiated cells surviving between the microplanar beams migrate to the in-beam irradiated portion and assist in recovery. The dose may be administered in dose fractions over several sessions, separated in time, using angle-variable intersecting microbeam arrays (AVIMA). Additional doses may be administered by varying the orientation of the microplanar beams. The method may be enhanced by injecting stem cells into the injury site.

  11. Towards a single step process to create high purity gold structures by electron beam induced deposition at room temperature

    Science.gov (United States)

    Mansilla, C.; Mehendale, S.; Mulders, J. J. L.; Trompenaars, P. H. F.

    2016-10-01

    Highly pure metallic structures can be deposited by electron beam induced deposition and they have many important applications in different fields. The organo-metallic precursor is decomposed and deposited under the electron beam, and typically it is purified with post-irradiation in presence of O2. However, this approach limits the purification to the surface of the deposit. Therefore, ‘in situ’ purification during deposition using simultaneous flows of both O2 and precursor in parallel with two gas injector needles has been tested and verified. To simplify the practical arrangements, a special concentric nozzle has been designed allowing deposition and purification performed together in a single step. With this new device metallic structures with high purity can be obtained more easily, while there is no limit on the height of the structures within a practical time frame. In this work, we summarize the first results obtained for ‘in situ’ Au purification using this concentric nozzle, which is described in more detail, including flow simulations. The operational parameter space is explored in order to optimize the shape as well as the purity of the deposits, which are evaluated through scanning electron microscope and energy dispersive x-ray spectroscopy measurements, respectively. The observed variations are interpreted in relation to other variables, such as the deposition yield. The resistivity of purified lines is also measured, and the influence of additional post treatments as a last purification step is studied.

  12. Dual-ion-beam deposition of carbon films with diamond-like properties

    Science.gov (United States)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1985-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamond like films generated by sputtering a graphite target.

  13. Closed-Loop Process Control for Electron Beam Freeform Fabrication and Deposition Processes

    Science.gov (United States)

    Taminger, Karen M. (Inventor); Hafley, Robert A. (Inventor); Martin, Richard E. (Inventor); Hofmeister, William H. (Inventor)

    2013-01-01

    A closed-loop control method for an electron beam freeform fabrication (EBF(sup 3)) process includes detecting a feature of interest during the process using a sensor(s), continuously evaluating the feature of interest to determine, in real time, a change occurring therein, and automatically modifying control parameters to control the EBF(sup 3) process. An apparatus provides closed-loop control method of the process, and includes an electron gun for generating an electron beam, a wire feeder for feeding a wire toward a substrate, wherein the wire is melted and progressively deposited in layers onto the substrate, a sensor(s), and a host machine. The sensor(s) measure the feature of interest during the process, and the host machine continuously evaluates the feature of interest to determine, in real time, a change occurring therein. The host machine automatically modifies control parameters to the EBF(sup 3) apparatus to control the EBF(sup 3) process in a closed-loop manner.

  14. Laser-assisted atom probe tomography of Ti/TiN films deposited on Si.

    Science.gov (United States)

    Sanford, N A; Blanchard, P T; White, R; Vissers, M R; Diercks, D R; Davydov, A V; Pappas, D P

    2017-03-01

    Laser-assisted atom probe tomography (L-APT) was used to examine superconducting TiN/Ti/TiN trilayer films with nominal respective thicknesses of 5/5/5 (nm). Such materials are of interest for applications that require large arrays of microwave kinetic inductance detectors. The trilayers were deposited on Si substrates by reactive sputtering. Electron energy loss microscopy performed in a scanning transmission electron microscope (STEM/EELS) was used to corroborate the L-APT results and establish the overall thicknesses of the trilayers. Three separate batches were studied where the first (bottom) TiN layer was deposited at 500°C (for all batches) and the subsequent TiN/Ti bilayer was deposited at ambient temperature, 250°C, and 500°C, respectively. L-APT rendered an approximately planar TiN/Si interface by making use of plausible mass-spectral assignments to N3(1+), SiN(1+), and SiO(1+). This was necessary since ambiguities associated with the likely simultaneous occurrence of Si(1+) and N2(1+) prevented their use in rendering the TiN/Si interface upon reconstruction. The non-superconducting Ti2N phase was also revealed by L-APT. Neither L-APT nor STEM/EELS rendered sharp Ti/TiN interfaces and the contrast between these layers diminished with increased film deposition temperature. L-APT also revealed that hydrogen was present in varying degrees in all samples including control samples that were composed of single layers of Ti or TiN.

  15. Mechanism of spallation in platinum aluminide/electron beam physical vapor-deposited thermal barrier coatings

    Energy Technology Data Exchange (ETDEWEB)

    Gell, M.; Vaidyanathan, K.; Barber, B.; Cheng, J.; Jordan, E. [Univ. of Connecticut, Storrs, CT (United States)

    1999-02-01

    The spallation failure of a commercial thermal barrier coating (TBC), consisting of a single-crystal RENE N5 superalloy, a platinum aluminide (Pt-Al) bond coat, and an electron beam-deposited 7 wt pct yttria-stabilized zirconia ceramic layer (7YSZ), was studied following cyclic furnace testing. In the uncycled state and prior to deposition of the ceramic, the Pt-Al bond-coat surface contains a cellular network of ridges corresponding to the underlying bond-coat grain-boundary structure. With thermal cycling, the ridges and associated grain boundaries are the sites of preferential oxidation and cracking, which results in the formation of cavities that are partially filled with oxide. Using a fluorescent penetrant dye in conjunction with a direct-pull test, it is shown that, when specimens are cycled to about 80 pct of life, these grain-boundary regions show extensive debonding. The roles of oxidation and cyclic stress in localized grain boundary region spallation are discussed. The additional factors leading to large-scale TBC spallation are described.

  16. Temperature stabilized effusion cell evaporation source for thin film deposition and molecular-beam epitaxy

    Science.gov (United States)

    Tiedje, H. F.; Brodie, D. E.

    2000-05-01

    A simple effusion cell evaporation source for thin film deposition and molecular-beam epitaxy is described. The source consists of a crucible with a thermocouple temperature sensor heated by a resistive crucible heater. Radiation heat transfer from the crucible to the thermocouple produces a consistent and reproducible thermocouple temperature for a given crucible temperature, without direct contact between the thermocouple and the crucible. The thermocouple temperature is somewhat less than the actual crucible temperature because of heat flow from the thermocouple junction along the thermocouple lead wires. In a typical case, the thermocouple temperature is 1007 °C while the crucible is at 1083 °C. The crucible temperature stability is estimated from the measured sensitivity of the evaporation rate of indium to temperature, and the observed variations in the evaporation rate for a fixed thermocouple temperature. The crucible temperature peak-to-peak variation over a one hour period is 1.2 °C. Machined molybdenum crucibles were used in the indium and copper sources for depositing CuInSe2 thin films for solar cells.

  17. Mechanisms of spallation of electron beam physical vapor deposited thermal barrier coatings with and without platinum aluminide bond coat ridges

    Energy Technology Data Exchange (ETDEWEB)

    Vaidyanathan, K.; Gell, M. [Connecticut Univ., Storrs, CT (United States). Dept. of Metallurgy; Jordan, E. [Dept. Mechanical Engineering, University of Connecticut, CT-06269, Storrs (United States)

    2000-11-01

    Grain boundary ridges, that form on the surface of platinum aluminide [(Ni,Pt)Al] bond coats prior to the deposition of the yttria stabilized zirconia ceramic layer by the electron beam physical vapor deposition (EB-PVD) process, were shown to be the sites for spallation damage initiation in (Ni,Pt)Al/EB-PVD thermal barrier coatings. When these ridges are removed prior to deposition of the ceramic layer, a 3 x life improvement is achieved. This study compares the spallation mechanisms in specimens with and without bond coat ridges, in order to explain the improvement in spallation life. (orig.)

  18. Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

    Energy Technology Data Exchange (ETDEWEB)

    Zaleta-Alejandre, E.; Balderas-Xicoténcatl, R. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Arrieta, M.L. Pérez [Universidad Autónoma de Zacatecas, Unidad Académica de Física, Calzada Solidaridad esq. Paseo, La Bufa s/n, C.P. 98060, Zacatecas, México (Mexico); Meza-Rocha, A.N.; Rivera-Álvarez, Z. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Falcony, C., E-mail: cfalcony@fis.cinvestav.mx [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico)

    2013-10-01

    Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min{sup −1} at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min{sup −1} were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s.

  19. Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Lorenzo Rigutti

    2009-01-01

    Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

  20. Photoluminescence studies of ZnO nanorods grown by plasma-assisted molecular beam epitaxy.

    Science.gov (United States)

    Kim, Min Su; Nam, Giwoong; Leem, Jae-Young

    2013-05-01

    Metal catalyst-free ZnO nanorods were grown on PS with buffer layers grown at 450 degrees C by plasma-assisted molecular beam epitaxy. Room temperature and temperature-dependent photoluminescence were carried out to investigate the optical properties of the ZnO nanorods with the average diameter of 120 nm and length of 300 nm. Three emission peaks, free excition, neutral-donor exciton, and free electron-to-neutral acceptor, were observed at 10 K. Huang-Rhys factor S of the ZnO nanorods was 0.978, which is much higher than that of ZnO thin films. The values of Varshni's empirical equation fitting parameters were alpha = 4 x 10(-3) eV/K, beta = 4.1 x 10(4) K, and E9(0) = 3.388 eV and the activation energy was about 96 meV.

  1. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy.

    Science.gov (United States)

    Dheeraj, D L; Munshi, A M; Scheffler, M; van Helvoort, A T J; Weman, H; Fimland, B O

    2013-01-11

    Control of the crystal phases of GaAs nanowires (NWs) is essential to eliminate the formation of stacking faults which deteriorate the optical and electronic properties of the NWs. In addition, the ability to control the crystal phase of NWs provides an opportunity to engineer the band gap without changing the crystal material. We show that the crystal phase of GaAs NWs grown on GaAs(111)B substrates by molecular beam epitaxy using the Au-assisted vapor-liquid-solid growth mechanism can be tuned between wurtzite (WZ) and zinc blende (ZB) by changing the V/III flux ratio. As an example we demonstrate the realization of WZ GaAs NWs with a ZB GaAs insert that has been grown without changing the substrate temperature.

  2. Direct Deposition of Bamboo-Like Carbon Nanotubes on Copper Substrates by Sulfur-Assisted HFCVD

    Directory of Open Access Journals (Sweden)

    Sri Lakshmi Katar

    2008-01-01

    Full Text Available Films of bamboo-like carbon nanotubes (BCNTs were grown directly on copper substrates by sulfur-assisted hot filament chemical vapor deposition (HFCVD. The effects of substrate temperature and growth time over the BCNT structure were investigated. The films were characterized by scanning electron microscopy (SEM, Raman spectroscopy (RS, transmission electron microscopy (TEM, X-ray photoelectron spectroscopy (XPS, and electron field emission (EFE studies. SEM and Raman characterization indicate a transition from the growth of microcrystalline diamond to the growth of a dense entangled network of carbon nanotubes or fibers as the substrate temperature is increased from 400 to 900°C that is accounted for by the base growth model. TEM images show that the nanotubes have regular arrays of nanocavities. These BCNTs show good electron field emission properties as other carbon films.

  3. Quarterly Report: Microchannel-Assisted Nanomaterial Deposition Technology for Photovoltaic Material Production

    Energy Technology Data Exchange (ETDEWEB)

    Palo, Daniel R.

    2011-04-26

    Quarterly report to ITP for Nanomanufacturing program. Report covers FY11 Q2. The primary objective of this project is to develop a nanomanufacturing process which will reduce the manufacturing energy, environmental discharge, and production cost associated with current nano-scale thin-film photovoltaic (PV) manufacturing approaches. The secondary objective is to use a derivative of this nanomanufacturing process to enable greener, more efficient manufacturing of higher efficiency quantum dot-based photovoltaic cells now under development. The work is to develop and demonstrate a scalable (pilot) microreactor-assisted nanomaterial processing platform for the production, purification, functionalization, and solution deposition of nanomaterials for photovoltaic applications. The high level task duration is shown. Phase I consists of a pilot platform for Gen II PV films along with parallel efforts aimed at Gen III PV quantum dot materials. Status of each task is described.

  4. Superhydrophobic polymer films via aerosol assisted deposition - Taking a leaf out of nature's book

    Energy Technology Data Exchange (ETDEWEB)

    Crick, Colin R. [Materials Chemistry Research Centre, Department of Chemistry, University College London, 20 Gordon Street, London WC1H OAJ (United Kingdom); Parkin, Ivan P., E-mail: i.p.parkin@ucl.ac.u [Materials Chemistry Research Centre, Department of Chemistry, University College London, 20 Gordon Street, London WC1H OAJ (United Kingdom)

    2010-05-31

    Aerosol assisted deposition of three sets of polymer films based on commercially available resins was achieved on various substrates. The films were characterised using a range of methods, including water contact and slip angle to determine water repellent properties. The aerosol assisted deposition inside the chemical vapour deposition reactor was unique in generating a highly rough superhydrophobic surface with water contact angles up to 170{sup o}. During the deposition process, two of the polymers were cured resulting in the development of high surface morphology. It was observed that the polymer that did not cure did not develop such a rough surface resulting in a lower water contact angle ({approx} 99{sup o}). The superhydrophobic films had a Cassie-Baxter type wetting with water failing to penetrate the surface porosity, water spraying on the surface would bounce off. These films had exceptionally low slide angles of ca 1-2{sup o} from the horizontal.

  5. Exploring the potential of laser assisted flow deposition grown ZnO for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, J., E-mail: joana.catarina@ua.pt [Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Cerqueira, A.F.R.; Sousa, M.G.; Santos, N.F. [Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Pimentel, A.; Fortunato, E. [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Cunha, A.F. da; Monteiro, T.; Costa, F.M. [Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal)

    2016-07-01

    Zinc oxide (ZnO) is a widely studied wide band gap semiconductor with applications in several fields, namely to enhance solar cells efficiency. Its ability to be grown in a wide variety of nanostructured morphologies, allowing the designing of the surface area architecture constitutes an important advantage over other semiconductors. Laser assisted flow deposition (LAFD) is a recently developed growth method, based on a vapour-solid mechanism, which proved to be a powerful approach in the production of ZnO micro/nanostructures with different morphologies as well as high crystallinity and optical quality. In the present work we report the use of the LAFD technique to grow functional ZnO nanostructures (nanoparticles and tetrapods) working as nano templates to improve the dye-sensitized solar cells (DSSCs) efficiency. The structural and morphological characterization of the as-grown ZnO crystals were performed by X-ray diffraction and electron microscopy, respectively, and the optical quality was assessed by photoluminescence spectroscopy. DSSCs were produced using a combination of these nanostructures, which were subsequently sensitized with N719 dye. An efficiency of ∼3% was achieved under simulated AM 1.5 illumination conditions for a dye loading time of 1 h. - Highlights: • Laser assisted flow deposition proved to be an efficient technique to produce high quality ZnO. • Active layer formed by an interconnected network of tetrapods and a small amount of nanoparticles. • Efficiency of ∼3% obtained under simulated AM 1.5 illumination conditions.

  6. Focused-ion-beam-assisted fabrication of polymer rolled-up microtubes

    Science.gov (United States)

    Luchnikov, V.; Stamm, M.; Akhmadaliev, Ch; Bischoff, L.; Schmidt, B.

    2006-08-01

    A focused ion beam (FIB) has been applied to the fabrication of polymer microtubes via the rolling-up technique from poly(4-vinyl pyridine)/polystyrene bilayer films deposited on the top of a sacrificial aluminum layer covering a silicon wafer. The bending forces in the film arise due to different swelling of the bilayer components in acidic water and lead to rolling of the film. The dimensions and position of the rolled-up tubes can be controlled by FIB milling (sputtering) of geometrically well-adjusted openings in the polymer films. This technique can be applied to the structuring of scrolled films formed from different materials without the use of lithographically patterned photoresists. The geometrical patterning of the tube interior can also be done by FIB irradiation.

  7. Surface reaction mechanisms during ozone and oxygen plasma assisted atomic layer deposition of aluminum oxide.

    Science.gov (United States)

    Rai, Vikrant R; Vandalon, Vincent; Agarwal, Sumit

    2010-09-07

    We have elucidated the reaction mechanism and the role of the reactive intermediates in the atomic layer deposition (ALD) of aluminum oxide from trimethyl aluminum in conjunction with O(3) and an O(2) plasma. In situ attenuated total reflection Fourier transform infrared spectroscopy data show that both -OH groups and carbonates are formed on the surface during the oxidation cycle. These carbonates, once formed on the surface, are stable to prolonged O(3) exposure in the same cycle. However, in the case of plasma-assisted ALD, the carbonates decompose upon prolonged O(2) plasma exposure via a series reaction kinetics of the type, A (CH(3)) --> B (carbonates) --> C (Al(2)O(3)). The ratio of -OH groups to carbonates on the surface strongly depends on the oxidizing agent, and also the duration of the oxidation cycle in plasma-assisted ALD. However, in both O(3) and O(2) plasma cycles, carbonates are a small fraction of the total number of reactive sites compared to the hydroxyl groups.

  8. Microwave plasma assisted chemical vapor deposition of ultra-nanocrystalline diamond films

    Science.gov (United States)

    Huang, Wen-Shin

    Microwave plasma assisted ultra-nanocrystalline diamond film deposition was investigated using hydrogen deficient, carbon containing argon plasma chemistries with MSU-developed microwave plasma reactors. Ultra-nanocrystalline diamond film deposition on mechanically scratched silicon wafers was experimentally explored over the following input variables: (1) pressure: 60--240Torr, (2) total gas flow rate: 101--642 sccm, (3) input microwave power 732--1518W, (4) substrate temperature: 500°C--770°C, (5) deposition time: 2--48 hours, and (6) N2 impurities 5--2500 ppm. H2 concentrations were less than 9%, while CH 4 concentration was 0.17--1.85%. It was desired to grow films uniformly over 3″ diameter substrates and to minimize the grain size. Large, uniform, intense, and greenish-white discharges were sustained in contact with three inch silicon substrates over a 60--240 Torr pressure regime. At a given operating pressure, film uniformity was controlled by adjusting substrate holder geometry, substrate position, input microwave power, gas chemistries, and total gas flow rates. Film ultra-nanocrystallinity and smoothness required high purity deposition conditions. Uniform ultra-nanocrystalline films were synthesized in low leak-rate system with crystal sizes ranging from 3--30 nm. Films with 11--50 nm RMS roughness and respective thickness values of 1--23 mum were synthesized over 3″ wafers under a wide range of different deposition conditions. Film RMS roughness 7 nm was synthesized with thickness of 430 nm. Film uniformities of almost 100% were achieved over three inch silicon wafers. UV Raman and XRD characterization results indicated the presence of diamond in the synthesized films. Optical Emission Spectroscopy measurements showed that the discharge gas temperature was in excess of 2000 K. The synthesized films are uniformly smooth and the as grown ultra-nanocrystalline diamond can be used for a high frequency SAW device substrate material. IR measurements

  9. Structural and electrical properties of tantalum oxide films grown by photo-assisted pulsed laser deposition

    Science.gov (United States)

    Zhang, Jun-Ying; Boyd, Ian W.

    2002-01-01

    We describe the growth of thin films of Ta 2O 5 on quartz and silicon (1 0 0) substrates by an in situ photo-assisted pulsed laser deposition (photo-PLD) using radiation from a Nd:YAG laser (wavelength, λ=532 nm) to stimulate the ablation, and from an excimer lamp to excite additional photochemistry. The layers grown were investigated by Fourier transform infrared (FT-IR) spectroscopy, UV spectrophotometry, atomic force microscopy (AFM), ellipsometry and electrical measurements. We have found that they exhibit a significant improvement in microstructure, and optical and electrical properties compared with conventional PLD films prepared under, otherwise, identical conditions. For example, FT-IR results showed that the suboxide content in the as-grown films deposited by the photo-PLD process is less, while the leakage current density was an order of magnitude less at around 10 -6 A/cm 2 at a bias of 1 V. These results indicate that this photo-PLD process approach can be advantageous for dielectric and optical oxide film growth.

  10. Chemical vapor deposition graphene transfer process to a polymeric substrate assisted by a spin coater

    Science.gov (United States)

    Kessler, Felipe; da Rocha, Caique O. C.; Medeiros, Gabriela S.; Fechine, Guilhermino J. M.

    2016-03-01

    A new method to transfer chemical vapor deposition graphene to polymeric substrates is demonstrated here, it is called direct dry transfer assisted by a spin coater (DDT-SC). Compared to the conventional method DDT, the improvement of the contact between graphene-polymer due to a very thin polymeric film deposited by spin coater before the transfer process prevented air bubbles and/or moisture and avoided molecular expansion on the graphene-polymer interface. An acrylonitrile-butadiene-styrene copolymer, a high impact polystyrene, polybutadiene adipate-co-terephthalate, polylactide acid, and a styrene-butadiene-styrene copolymer are the polymers used for the transfers since they did not work very well by using the DDT process. Raman spectroscopy and optical microscopy were used to identify, to quantify, and to qualify graphene transferred to the polymer substrates. The quantity of graphene transferred was substantially increased for all polymers by using the DDT-SC method when compared with the DDT standard method. After the transfer, the intensity of the D band remained low, indicating low defect density and good quality of the transfer. The DDT-SC transfer process expands the number of graphene applications since the polymer substrate candidates are increased.

  11. Kinetics of diamond-like film growth using filament-assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gorsuch, G.; Jin, Y.; Ingle, N.K.; Mountziaris, T.J.; Yu, W.Y.; Petrou, A. [State Univ. of New York, Buffalo, NY (United States)

    1995-08-01

    A detailed kinetic model of diamond-like film growth from methane diluted in hydrogen using low-pressure, filament-assisted chemical vapor deposition (FACVD) has been developed. The model includes both gas-phase and surface reactions. The surface kinetics include adsorption of CH{sub 3}{center_dot} and H{center_dot}, abstraction reactions by gas phase radicals, desorption, and two pathways for diamond (sp{sup 3}) and graphitic carbon (sp{sup 2}) growth. It is postulated that adsorbed CH{sub 2}{center_dot} species are the major film precursors. The proposed kinetic model was incorporated into a transport model describing flow, heat and mass transfer in stagnation flow FACVD reactors. Diamond-like films were deposited on preceded Si substrates in such a reactor as a pressure of 26 Torr, inlet gas composition ranging from 0.5% to 1.5% methane in hydrogen and substrate temperatures ranging from 600 to 950 C. The best films were obtained at low methane concentrations and substrate temperature of 700 C. The films were characterized using Scanning Electron Microscopy (SEM) and Raman spectroscopy. Observations from their experiments and growth rates, compositions and stable species distributions in the gas phase. It is the first complete model of FACVD that includes gas-phase and surface kinetics coupled with transport phenomena.

  12. NanoSQUID magnetometry of individual cobalt nanoparticles grown by focused electron beam induced deposition

    Science.gov (United States)

    Martínez-Pérez, M. J.; Müller, B.; Schwebius, D.; Korinski, D.; Kleiner, R.; Sesé, J.; Koelle, D.

    2017-02-01

    We demonstrate the operation of low-noise nano superconducting quantum interference devices (SQUIDs) based on the high critical field and high critical temperature superconductor YBa2Cu3O7 (YBCO) as ultra-sensitive magnetometers for single magnetic nanoparticles (MNPs). The nanoSQUIDs exploit the Josephson behavior of YBCO grain boundaries and have been patterned by focused ion beam milling. This allows us to precisely define the lateral dimensions of the SQUIDs so as to achieve large magnetic coupling between the nanoloop and individual MNPs. By means of focused electron beam induced deposition, cobalt MNPs with a typical size of several tens of nm have been grown directly on the surface of the sensors with nanometric spatial resolution. Remarkably, the nanoSQUIDs are operative over extremely broad ranges of applied magnetic field (-1 T \\lt {μ }0H\\lt 1 T) and temperature (0.3 K \\lt T\\lt 80 K). All these features together have allowed us to perform magnetization measurements under different ambient conditions and to detect the magnetization reversal of individual Co MNPs with magnetic moments (1-30) × {10}6 {μ }{{B}}. Depending on the dimensions and shape of the particles we have distinguished between two different magnetic states yielding different reversal mechanisms. The magnetization reversal is thermally activated over an energy barrier, which has been quantified for the (quasi) single-domain particles. Our measurements serve to show not only the high sensitivity achievable with YBCO nanoSQUIDs, but also demonstrate that these sensors are exceptional magnetometers for the investigation of the properties of individual nanomagnets.

  13. Direct Fabrication of Carbon Nanotubes STM Tips by Liquid Catalyst-Assisted Microwave Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Fa-Kuei Tung

    2009-01-01

    Full Text Available Direct and facile method to make carbon nanotube (CNT tips for scanning tunneling microscopy (STM is presented. Cobalt (Co particles, as catalysts, are electrochemically deposited on the apex of tungsten (W STM tip for CNT growth. It is found that the quantity of Co particles is well controlled by applied DC voltage, concentration of catalyst solution, and deposition time. Using optimum growth condition, CNTs are successfully synthesized on the tip apex by catalyst-assisted microwave-enhanced chemical vapor deposition (CA-MPECVD. A HOPG surface is clearly observed at an atomic scale using the present CNT-STM tip.

  14. Ultrasonic Spray-Assisted Solution-Based Vapor-Deposition of Aluminum Tris(8-hydroxyquinoline) Thin Films

    Science.gov (United States)

    Piao, Jinchun; Katori, Shigetaka; Ikenoue, Takumi; Fujita, Shizuo

    2011-02-01

    Aluminum tris(8-hydroxyquinoline) (Alq3) thin films were fabricated by a vapor-deposition technique from its methanol solution, that is, by the ultrasonic-assisted mist deposition technique. The application of high ultrasonic power to the Alq3-methanol mixture resulted in a stable and transparent solution. Mist particles formed by ultrasonic atomization of the solution were used as the source for vapor-deposition at the substrate temperature of 100-200 °C. Optical absorption and photoluminescence characteristics indicated the formation of Alq3 thin films. The results promise the formation of thin films of a variety of organic materials by the solution-based technique.

  15. High-purity 3D nano-objects grown by focused-electron-beam induced deposition

    Science.gov (United States)

    Córdoba, Rosa; Sharma, Nidhi; Kölling, Sebastian; Koenraad, Paul M.; Koopmans, Bert

    2016-09-01

    To increase the efficiency of current electronics, a specific challenge for the next generation of memory, sensing and logic devices is to find suitable strategies to move from two- to three-dimensional (3D) architectures. However, the creation of real 3D nano-objects is not trivial. Emerging non-conventional nanofabrication tools are required for this purpose. One attractive method is focused-electron-beam induced deposition (FEBID), a direct-write process of 3D nano-objects. Here, we grow 3D iron and cobalt nanopillars by FEBID using diiron nonacarbonyl Fe2(CO)9, and dicobalt octacarbonyl Co2(CO)8, respectively, as starting materials. In addition, we systematically study the composition of these nanopillars at the sub-nanometer scale by atom probe tomography, explicitly mapping the homogeneity of the radial and longitudinal composition distributions. We show a way of fabricating high-purity 3D vertical nanostructures of ˜50 nm in diameter and a few micrometers in length. Our results suggest that the purity of such 3D nanoelements (above 90 at% Fe and above 95 at% Co) is directly linked to their growth regime, in which the selected deposition conditions are crucial for the final quality of the nanostructure. Moreover, we demonstrate that FEBID and the proposed characterization technique not only allow for growth and chemical analysis of single-element structures, but also offers a new way to directly study 3D core-shell architectures. This straightforward concept could establish a promising route to the design of 3D elements for future nano-electronic devices.

  16. Structure and electrical properties of quaternary Cr–Si–Ni–W films prepared by ion beam sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, X.Y., E-mail: wxy@tju.edu.cn [School of Electronic Information Engineering, Tianjin University, Tianjin 300072 (China); Ma, J.X.; Li, C.G. [School of Electronic Information Engineering, Tianjin University, Tianjin 300072 (China); Shao, J.Q. [BDS Electronics Co., Ltd., Bengbu 233010 (China)

    2014-08-01

    Highlights: • Quaternary Cr–Si–Ni–W thin film was prepared by IBSD. • As-deposited Cr–Si–Ni–W films show nanocrystalline state in XRD analysis. • Big massive particles in Cr–Si–Ni–W films are mainly formed in deposition process. • Conduction mechanism was discussed based on microscopic analysis. - Abstract: Si-rich Cr–Si–Ni–W films were deposited by ion beam sputter deposition (IBSD) using a mother alloy target on polished Al{sub 2}O{sub 3} substrates. Effects of ion beam voltage, annealing temperature and deposition time on sheet resistance and TCR of Cr–Si–Ni–W films were studied. Experimental results reveal that the as-deposited Cr–Si–Ni–W films obtained by IBSD show a crystalline state because of a high mobility of deposition atoms and molecules with more energy obtained from high energy ions. XRD and AFM analysis show that the big massive particles mainly composed of Si and CrSi{sub 2} in Cr–Si–Ni–W films are formed in the process of IBSD rather than in post-annealing stage. Long deposition time is significantly important to a decrease of the number and size of gaps between big particles in Cr–Si–Ni–W films and to an improvement of the continuity and compactness of film structure, influencing resistivity and TCR of deposition film. The conduction mechanism was discussed based on microscopic analysis and the conductive model proposed for Cr–Si–Ni–W films mainly composed of big particles.

  17. Effect of deposition distance on thickness and microstructure of silicon thin film produced by electron beam evaporation; Efeito da distancia de deposicao na espessura e microestrutura de filme fino obtido por evaporacao por feixe de eletrons

    Energy Technology Data Exchange (ETDEWEB)

    Toledo, T.F.; Ramanery, F.P.; Branco, J.R.T. [Fundacao Centro Tecnologico de Minas Gerais, Belo Horizonte, MG (Brazil)], e-mail: thalitaqui@yahoo.com.br; Cunha, M.A. [Acos Especiais Itabira S.A. (Acesita), Belo Horizonte, MG (Brazil)

    2006-07-01

    The interest for materials with new characteristics and properties made thin films an area of highest research interest. Silicon thin films have been widely used in solar cells, being the main active layer. In this work, the effect of deposition distance on thickness and microstructure of silicon films was investigated. The electron beam evaporation technique with argon plasma assistance was used to obtain films on stainless steel 304, Fe-Si alloy and soda lime glass. The experiments were made varying electron beam current and deposition pressure. The results are discussed based on Hertz-Knudsen's law and thin films microstructure evolution models. The samples were characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction and profilometer. (author)

  18. Structural and magnetic properties of magnetoelectric oxide heterostructures deposited by molecular beam epitaxy

    Science.gov (United States)

    Sterbinsky, George Evan

    There is considerable interest in incorporating magnetic materials into electronic devices to achieve new functions such as nonvolatile memories. Electric field control of magnetism is of much interest for new low power electronic devices because it eliminates the need to apply magnetic fields. One approach to achieving electrical control of magnetism is to exploit magnetoelastic effects in composites of ferromagnetic and ferroelectric materials. Application of an electric field to the composite will induce a strain through the piezo-electric effect, and the strain will alter the magnetization of the ferromagnetic constituent through the magnetoelastic effect. In this work, we examine the relationships between growth, strain, and magnetic properties of epitaxial ferrimagnetic Fe3O4 (magnetite) and ferroelectric BaTiO3 thin film heterostructures. We find that altering the strain state of a magnetite layer deposited on a BaTiO3 substrate has a profound effect on its magnetization. Here, we demonstrate the interaction between strain and magnetization is mediated by magnetic anisotropy and the magnetic domains structure of the films. Epitaxial magnetite films were deposited on MgO, BaTiO3, and SrTiO3 substrates by molecular beam epitaxy between temperatures of 573 and 723 K. Examination of the morphologies of Fe3O 4 films indicates that island growth is favored. Films exhibit in-plane magnetic isotropy and reduced saturation magnetizations with respect to the bulk material, as demonstrated by superconducting quantum interference device magnetometry. Magnetic hysteresis measurements suggest that these differences originate from antiphase boundary defects within the films. The strain in magnetite films deposited on BaTiO3 single crystal substrates was measured by x-ray diffraction. Measurements reveal a dependence of magnetization (M) on strain (epsilon) with discontinuities in magnetization versus temperature curves resulting from changes in the domain structure of the

  19. Biased Target Ion Beam Deposition and Nanoskiving for Fabricating NiTi Alloy Nanowires

    Science.gov (United States)

    Hou, Huilong; Horn, Mark W.; Hamilton, Reginald F.

    2016-12-01

    Nanoskiving is a novel nanofabrication technique to produce shape memory alloy nanowires. Our previous work was the first to successfully fabricate NiTi alloy nanowires using the top-down approach, which leverages thin film technology and ultramicrotomy for ultra-thin sectioning. For this work, we utilized biased target ion beam deposition technology to fabricate nanoscale (i.e., sub-micrometer) NiTi alloy thin films. In contrast to our previous work, rapid thermal annealing was employed for heat treatment, and the B2 austenite to R-phase martensitic transformation was confirmed using stress-temperature and diffraction measurements. The ultramicrotome was programmable and facilitated sectioning the films to produce nanowires with thickness-to-width ratios ranging from 4:1 to 16:1. Energy dispersive X-ray spectroscopy analysis confirmed the elemental Ni and Ti make-up of the wires. The findings exposed the nanowires exhibited a natural ribbon-like curvature, which depended on the thickness-to-width ratio. The results demonstrate nanoskiving is a potential nanofabrication technique for producing NiTi alloy nanowires that are continuous with an unprecedented length on the order of hundreds of micrometers.

  20. Fabrication of multilayer Laue lenses by a combination of pulsed laser deposition and focused ion beam.

    Science.gov (United States)

    Liese, Tobias; Radisch, Volker; Krebs, Hans-Ulrich

    2010-07-01

    X-ray diffractive techniques using Fresnel zone plate lenses of various forms are of great technical interest because of their ability to form images at very high spatial resolution, but the zone plates are unfortunately very hard to produce by lithography. Alternatively, multilayer Laue lenses (MLLs) and multilayer zone plates are used due to the higher and easily adjustable aspect ratio necessary for different wavelengths. In this paper, the fabrication of a MLL by a combination of pulsed laser deposition and focused ion beam machining is described. All steps of the production of a Ti/ZrO(2) microlens test structure with focal length of 220 microm (for a wavelength of 2.88 nm in the "water window" regime) are explained in detail. It is shown that this combination of two powerful techniques is very effective for the fabrication of MLL. All steps can be done in a very precise and controlled way without introducing damage to the grown multilayer structures.

  1. Negative Resistance Effect and Charge Transfer Mechanisms in the lon Beam Deposited Diamond Like Carbon Superlattices

    Directory of Open Access Journals (Sweden)

    Andrius VASILIAUSKAS

    2011-03-01

    Full Text Available In the present study DLC:SiOx/DLC/DLC:SiOx/nSi and DLC:SiOx/DLC/DLC:SiOx/pSi structures were fabricated by ion beam deposition using a closed drift ion source. Current-voltage (I-V characteristics of the multilayer samples were measured at room temperature. The main charge transfer mechanisms were considered. Unstable negative resistance effect was observed for some DLC:SiOx/DLC/DLC:SiOx/nSi and DLC:SiOx/DLC/DLC:SiOx/pSi structures. In the case of the diamond like carbon superlattices fabricated on nSi it was observed only during the first measurement. In the case of the some DLC:SiOx/DLC/DLC:SiOx/pSi negative resistance "withstood" several measurements. Changes of the charge carrier mechanisms were observed along with the dissapear of the negative resistance peaks. It seems, that in such a case influence of the bulk related charge transfer mechanisms such as Poole-Frenkel emission increased, while the influence of the contact limited charge transfer mechanisms such as Schottky emission decreased. Observed results were be explained by current flow through the local microconducting channels and subsequent destruction of the localized current pathways as a result of the heating by flowing electric current.http://dx.doi.org/10.5755/j01.ms.17.1.240

  2. Development of aerosol assisted chemical vapor deposition for thin film fabrication

    Science.gov (United States)

    Maulana, Dwindra Wilham; Marthatika, Dian; Panatarani, Camellia; Mindara, Jajat Yuda; Joni, I. Made

    2016-02-01

    Chemical vapor deposition (CVD) is widely used to grow a thin film applied in many industrial applications. This paper report the development of an aerosol assisted chemical vapor deposition (AACVD) which is one of the CVD methods. Newly developed AACVD system consists of a chamber of pyrex glass, two wire-heating elements placed to cover pyrex glass, a substrate holder, and an aerosol generator using an air brush sprayer. The temperature control system was developed to prevent condensation on the chamber walls. The control performances such as the overshoot and settling time were obtained from of the developed temperature controller. Wire-heating elements were controlled at certain setting value to heat the injected aerosol to form a thin film in the substrate. The performance of as-developed AACVD system tested to form a thin film where aerosol was sprayed into the chamber with a flow rate of 7 liters/minutes, and vary in temperatures and concentrations of precursor. The temperature control system have an overshoot around 25 °C from the desired set point temperature, very small temperature ripple 2 °C and a settling time of 20 minutes. As-developed AACVD successfully fabricated a ZnO thin film with thickness of below 1 µm. The performances of system on formation of thin films influenced by the generally controlled process such as values of setting temperature and concentration where the aerosol flow rate was fixed. Higher temperature was applied, the more uniform ZnO thin films were produced. In addition, temperature of the substrate also affected on surface roughness of the obtained films, while concentration of ZnO precursor determined the thickness of produce films. It is concluded that newly simple AACVD can be applied to produce a thin film.

  3. The Post—deposition Anneal Effects on the Electrical Properties of HfO2 Gate Dielectric Deposited by Ion Beam Sputtering at Room Temperature

    Institute of Scientific and Technical Information of China (English)

    KANGJinfeng; LIUXiaoyan; TIANDayu; WANGWei; LIANGuijun; XIONGGuangcheng; HANRuqi

    2003-01-01

    HfO2 high K gate dielectric films were fab-ricated on p-Si(100) substrates by ion beam sputtering at room temperature followed by a post-deposition anneal-ing (PDA). The PDA effects on the electrical properties of HfO2 gate dielectric films were studied. High quality HfO2 gate dielectric with small equivalent oxide thickness (EOT = 2.3nm), small hystereis (△VFB<50mV), and lowleakage current (< 1× 10-4A/cm2@lV) was fabricated.The studies of PDA effects on the electrical properties in-dicate that the PDA process in nitrogen ambient will be necessary for the HfO2 gate dielectric films deposited by ion beam sputtering the sintered target at room temper-ature in order to obtain small equivalent oxide thickness and low leakage currents, whereas a PDA in oxygen ambi-ent will be not required. The results also means that there is less oxygen vacancy defect produced in the HfO2 gate dielectric films during the deposition at room temperature.

  4. Electrochemically assisted deposition of transparent, mechanically robust TiO2 films for advanced applications

    Science.gov (United States)

    Maino, Giulia; Meroni, Daniela; Pifferi, Valentina; Falciola, Luigi; Soliveri, Guido; Cappelletti, Giuseppe; Ardizzone, Silvia

    2013-11-01

    In recent years, titanium dioxide has received ever growing interest, thanks to its promising applications in numerous fields such as environmental remediation, H2 generation and photovoltaics. Here, transparent and mechanically robust TiO2 films are deposited by a simple and inexpensive electrochemically assisted procedure on various kinds of substrates, both conductive and nonconductive (e.g., glass slides or different metal laminas with variable surface roughness). The obtained films are uniform, crack-free and exhibit excellent chemical, mechanical, and electrochemical robustness. The obtained layers are compared to films prepared by a routine preparation technique, such as dip coating, showing much better morphological, optical, and conductive properties. The photo-activity of TiO2 can be exploited to obtain transparent spectroelectrochemical systems and to control the wetting features of the surface. Applications concerning the modulation of the wettability are presented with respect to both the antifogging and antistain properties. The photoelectrochemical properties of TiO2 films are exploited to activate a photoelectrochemical polymerization of polypyrrole onto an unconductive support. These materials are promising for numerous applications such as smart windows, antifogging mirrors, solar cells, and optically transparent electrodes.

  5. Electrospray-assisted characterization and deposition of chlorosomes to fabricate a biomimetic light-harvesting device

    Energy Technology Data Exchange (ETDEWEB)

    Modesto-Lopez, Luis B.; Thimsen, Elijah J.; Collins, Aaron M.; Blankenship, R. E.; Biswas, Pratim

    2010-01-01

    Photosynthesis is an efficient process by which solar energy is converted into chemical energy. Green photosynthetic bacteria such as Chloroflexus aurantiacus have supramolecular antenna complexes called chlorosomes attached to their cytoplasmic membrane that increase the cross section for light absorption even in low-light conditions. Self-assembled bacteriochlorophyll pigments in the chlorosome interior play a key role in the efficient transfer and funneling of the harvested energy. In this work it was demonstrated that chlorosomes can be rapidly and precisely size-characterized online in real time using an electrospray-assisted mobility-based technique. Chlorosomes were electrospray-deposited onto TiO{sub 2} nanostructured films with columnar morphology to fabricate a novel biomimetic device to overcome the solvent compatibility issues associated with biological particles and synthetic dyes. The assembled unit retained the viability of the chlorosomes, and the harvesting of sunlight over a broader range of wavelengths was demonstrated. It was shown that the presence of chlorosomes in the biomimetic device had a 30-fold increase in photocurrent.

  6. Laser-processing of VO2 thin films synthesized by polymer-assisted-deposition

    Science.gov (United States)

    Breckenfeld, Eric; Kim, Heungsoo; Gorzkowski, Edward P.; Sutto, Thomas E.; Piqué, Alberto

    2017-03-01

    We investigate a novel route for synthesis and laser-sintering of VO2 thin films via solution-based polymer-assisted-deposition (PAD). By replacing the traditional solvent for PAD (water) with propylene glycol, we are able to control the viscosity and improve the environmental stability of the precursor. The solution stability and ability to control the viscosity makes for an ideal solution to pattern simple or complex shapes via direct-write methods. We demonstrate the potential of our precursor for printing applications by combining PAD with laser induced forward transfer (LIFT). We also demonstrate large-area film synthesis on 4 in. diameter glass wafers. By varying the annealing temperature, we identify the optimal synthesis conditions, obtaining optical transmittance changes of 60% at a 2500 nm wavelength and a two-order-of-magnitude semiconductor-to-metal transition. We go on to demonstrate two routes for improved semiconductor-to-metal characteristics. The first method uses a multi-coating process to produce denser films with large particles. The second method uses a pulsed-UV-laser sintering step in films annealed at low temperatures (<450° C) to promote particle growth and improve the semiconductor-to-metal transition. By comparing the hysteresis width and semiconductor-to-metal transition magnitude in these samples, we demonstrate that both methods yield high quality VO2 with a three-order-of-magnitude transition.

  7. Platinum-assisted post deposition annealing of the n-Ge/Y2O3 interface

    Science.gov (United States)

    Zimmermann, C.; Bethge, O.; Lutzer, B.; Bertagnolli, E.

    2016-07-01

    The impact of annealing temperature and annealing duration on the interface properties of n-Ge/Y2O3/Pt MOS-capacitors is investigated employing an ultrathin catalytically acting Pt-layer. X-ray photoelectron spectroscopy analysis has been used to verify an enhanced growth of GeO2 and thermally stabilizing yttrium germanate at the n-Ge/Y2O3 interface induced by an oxygen post deposition annealing (PDA). Especially at 500 °C and 550 °C high quality Ge/Y2O3 interfaces have been achieved resulting in very low interface trap density of 7.41*1010 eV-1 cm-2. It is shown that either a short oxygen annealing at higher temperatures (550 °C) or a long time annealing at lower temperatures (450 °C) are appropriate to realize low interface trap density (D it). It turns out that a Pt-assisted PDA in combination with a final PMA are needed to reduce hysteresis width significantly and to bring flat band voltages toward ideal values.

  8. Plasma-assisted molecular beam epitaxy growth of ZnSnN2

    Science.gov (United States)

    Feldberg, Nathaniel; Aldous, James; Yao, Yuan; Tanveer, Imtiaz; Keen, Benjamin; Linhart, Wojciech; Veal, Tim; Song, Young-Wook; Reeves, Roger; Durbin, Steve

    2012-02-01

    The Zn-IV-nitrides are a promising series of ``earth abundant element'' semiconductors with a predicted band gap range of 0.6 eV to 5.4 eV, which, like the (Al,Ga,In)N family, spans the entire visible solar spectrum. Considering this alternative family has a number of advantages, including the avoidance of indium, the price of which has varied almost an order of magnitude over the past decade, and surface electron accumulation which is present in the In-rich alloys. Not all members of this family have yet been synthesized, in particular ZnSnN2, the most important member for PV with its predicted band gap of approximately 2 eV. We have successfully grown a series of these films using plasma-assisted molecular beam epitaxy using elemental Zn and Sn sources. In this report, we discuss the relationship between process parameters and microstructure, as well as stoichiometry as determined by Rutherford backscattering spectrometry. Additionally, we provide preliminary estimates for its bandgap energy based on photoluminescence and optical absorption.

  9. Customized atomic force microscopy probe by focused-ion-beam-assisted tip transfer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Andrew; Butte, Manish J., E-mail: manish.butte@stanford.edu [Department of Pediatrics, Division of Immunology, Allergy and Rheumatology, Stanford University, Stanford, California 94305 (United States)

    2014-08-04

    We present a technique for transferring separately fabricated tips onto tipless atomic force microscopy (AFM) cantilevers, performed using focused ion beam-assisted nanomanipulation. This method addresses the need in scanning probe microscopy for certain tip geometries that cannot be achieved by conventional lithography. For example, in probing complex layered materials or tall biological cells using AFM, a tall tip with a high-aspect-ratio is required to avoid artifacts caused by collisions of the tip's sides with the material being probed. We show experimentally that tall (18 μm) cantilever tips fabricated by this approach reduce squeeze-film damping, which fits predictions from hydrodynamic theory, and results in an increased quality factor (Q) of the fundamental flexural mode. We demonstrate that a customized tip's well-defined geometry, tall tip height, and aspect ratio enable improved measurement of elastic moduli by allowing access to low-laying portions of tall cells (T lymphocytes). This technique can be generally used to attach tips to any micromechanical device when conventional lithography of tips cannot be accomplished.

  10. [Development of computer assisted learning program using cone beam projection for head radiography].

    Science.gov (United States)

    Nakazeko, Kazuma; Kajiwara, Hironori; Watanabe, Hiroyuki; Kuwayama, Jun; Karube, Shuhei; Araki, Misao; Hashimoto, Takeyuki; Shinohara, Hiroyuki

    2012-01-01

    We present a computer assisted learning (CAL) program to simulate head radiography. The program provides cone beam projections of a target volume, simulating three-dimensional computed tomography (CT) of a head phantom. The generated image is 512 x 512 x 512 pixels with each pixel 0.6 mm on a side. The imaging geometry, such as X-ray tube orientation and phantom orientation, can be varied. The graphical user interface (GUI) of the CAL program allows the study of the effects of varying the imaging geometry; each simulated projection image is shown quickly in an adjoining window. Simulated images with an assigned geometry were compared with the image obtained using the standard geometry in clinical use. The accuracy of the simulated image was verified through comparison with the image acquired using radiography of the head phantom, subsequently processed with a computed radiography system (CR image). Based on correlation coefficient analysis and visual assessment, it was concluded that the CAL program can satisfactorily simulate the CR image. Therefore, it should be useful for the training of head radiography.

  11. Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    García Núñez, C., E-mail: carlos.garcia@uam.es; Braña, A. F.; Pau, J. L.; Ghita, D.; García, B. J. [Grupo de Electrónica y Semiconductores, Departamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Shen, G.; Wilbert, D. S.; Kim, S. M.; Kung, P. [Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, Alabama 35487 (United States)

    2014-01-21

    Surface optical (SO) phonons were studied by Raman spectroscopy in GaAs nanowires (NWs) grown by Ga-assisted chemical beam epitaxy on oxidized Si(111) substrates. NW diameters and lengths ranging between 40 and 65 nm and between 0.3 and 1.3 μm, respectively, were observed under different growth conditions. The analysis of the Raman peak shape associated to either longitudinal or surface optical modes gave important information about the crystal quality of grown NWs. Phonon confinement model was used to calculate the density of defects as a function of the NW diameter resulting in values between 0.02 and 0.03 defects/nm, indicating the high uniformity obtained on NWs cross section size during growth. SO mode shows frequency downshifting as NW diameter decreases, this shift being sensitive to NW sidewall oxidation. The wavevector necessary to activate SO phonon was used to estimate the NW facet roughness responsible for SO shift.

  12. Synthesis of Large-Sized Single-Crystal Hexagonal Boron Nitride Domains on Nickel Foils by Ion Beam Sputtering Deposition.

    Science.gov (United States)

    Wang, Haolin; Zhang, Xingwang; Liu, Heng; Yin, Zhigang; Meng, Junhua; Xia, Jing; Meng, Xiang-Min; Wu, Jinliang; You, Jingbi

    2015-12-22

    Large-sized single-crystal h-BN domains with a lateral size up to 100 μm are synthesized on Ni foils by ion-beam sputtering deposition. The nucleation density of h-BN is dramatically decreased by reducing the concentrations of both active sites and species on the Ni surface through a brief in situ pretreatment of the substrate and optimization of the growth parameters, enabling the growth of large-sized domains.

  13. Structural and growth aspects of electron beam physical vapor deposited NiO-CeO{sub 2} nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Kuanr, Sushil Kumar; K, Suresh Babu, E-mail: sureshbabu.nst@pondiuni.edu.in [Centre for Nanoscience and Technology, Madanjeet School of Green Energy Technologies, Pondicherry University, Puducherry 605 014 (India)

    2016-03-15

    Deposition of composite materials as thin film by electron beam physical vapor deposition technique (EB-PVD) still remains as a challenge. Here, the authors report the deposition of NiO-CeO{sub 2} (30/70 wt. %) composites on quartz substrate by EB-PVD. Two NiO-CeO{sub 2} nanocomposite targets—one as green compact and the other after sintering at 1250 °C—were used for the deposition. Though the targets varied with respect to physical properties such as crystallite size (11–45 nm) and relative density (44% and 96%), the resultant thin films exhibited a mean crystallite size in the range of 20–25 nm underlining the role of physical nature of deposition. In spite of the crystalline nature of the targets and similar elemental concentration, a transformation from amorphous to crystalline structure was observed in thin films on using sintered target. Postannealing of the as deposited film at 800 °C resulted in a polycrystalline structure consisting of CeO{sub 2} and NiO. Deposition using pure CeO{sub 2} or NiO as target resulted in the preferential orientation toward (111) and (200) planes, respectively, showing the influence of adatoms on the evaporation and growth process of NiO-CeO{sub 2} composite. The results demonstrate the influence of electron beam gun power on the adatom energy for the growth process of composite oxide thin films.

  14. Effects of space exposure on ion-beam-deposited silicon-carbide and boron-carbide coatings.

    Science.gov (United States)

    Keski-Kuha, R A; Blumenstock, G M; Fleetwood, C M; Schmitt, D R

    1998-12-01

    Two recently developed optical coatings, ion-beam-deposited silicon carbide and ion-beam-deposited boron carbide, are very attractive as coatings on optical components for instruments for space astronomy and earth sciences operating in the extreme-UV spectral region because of their high reflectivity, significantly higher than any conventional coating below 105 nm. To take full advantage of these coatings in space applications, it is important to establish their ability to withstand exposure to the residual atomic oxygen and other environmental effects at low-earth-orbit altitudes. The first two flights of the Surface Effects Sample Monitor experiments flown on the ORFEUS-SPAS and the CRISTA-SPAS Shuttle missions provided the opportunity to study the effects of space exposure on these materials. The results indicate a need to protect ion-beam-deposited silicon-carbide-coated optical components from environmental effects in a low-earth orbit. The boron-carbide thin-film coating is a more robust coating able to withstand short-term exposure to atomic oxygen in a low-earth-orbit environment.

  15. Investigation of chemical vapour deposition diamond detectors by X- ray micro-beam induced current and X-ray micro-beam induced luminescence techniques

    CERN Document Server

    Olivero, P; Vittone, E; Fizzotti, F; Paolini, C; Lo Giudice, A; Barrett, R; Tucoulou, R

    2004-01-01

    Tracking detectors have become an important ingredient in high-energy physics experiments. In order to survive the harsh detection environment of the Large Hadron Collider (LHC), trackers need to have special properties. They must be radiation hard, provide fast collection of charge, be as thin as possible and remove heat from readout electronics. The unique properties of diamond allow it to fulfill these requirements. In this work we present an investigation of the charge transport and luminescence properties of "detector grade" artificial chemical vapour deposition (CVD) diamond devices developed within the CERN RD42 collaboration, performed by means of X-ray micro-beam induced current collection (XBICC) and X-ray micro- beam induced luminescence (XBIL) techniques. XBICC technique allows quantitative estimates of the transport parameters of the material to be evaluated and mapped with micrometric spatial resolution. In particular, the high resolution and sensitivity of the technique has allowed a quantitati...

  16. Study on absorbance and laser damage threshold of HfO2 films prepared by ion-assisted reaction deposition

    Institute of Scientific and Technical Information of China (English)

    张大伟; 范树海; 高卫东; 贺洪波; 王英剑; 邵建达; 范正修; 孙浩杰

    2004-01-01

    Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different depo sition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold.

  17. Thickness and component distributions of yttrium-titanium alloy films in electron-beam physical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    LI ShuaiHui; SHU YongHua; FAN Jing

    2008-01-01

    Thickness and component distributions of large-area thin films are an issue of in-ternational concern in the field of material processing. The present wor0k employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal reso-nators, deposited film thickness distribution measured by Rutherford backscat-tering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.

  18. Thickness and component distributions of yttrium-titanium alloy films in electron-beam physical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Thickness and component distributions of large-area thin films are an issue of in-ternational concern in the field of material processing. The present work employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal reso-nators, deposited film thickness distribution measured by Rutherford backscat-tering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.

  19. On the magnetic properties of iron nanostructures fabricated via focused electron beam induced deposition and autocatalytic growth processes

    Science.gov (United States)

    Tu, F.; Drost, M.; Vollnhals, F.; Späth, A.; Carrasco, E.; Fink, R. H.; Marbach, H.

    2016-09-01

    We employ Electron beam induced deposition (EBID) in combination with autocatalytic growth (AG) processes to fabricate magnetic nanostructures with controllable shapes and thicknesses. Following this route, different Fe deposits were prepared on silicon nitride membranes under ultra-high vacuum conditions and studied by scanning electron microscopy (SEM) and scanning transmission x-ray microspectroscopy (STXM). The originally deposited Fe nanostructures are composed of pure iron, especially when fabricated via autocatalytic growth processes. Quantitative near-edge x-ray absorption fine structure (NEXAFS) spectroscopy was employed to derive information on the thickness dependent composition. X-ray magnetic circular dichroism (XMCD) in STXM was used to derive the magnetic properties of the EBID prepared structures. STXM and XMCD analysis evinces the existence of a thin iron oxide layer at the deposit-vacuum interface, which is formed during exposure to ambient conditions. We were able to extract magnetic hysteresis loops for individual deposits from XMCD micrographs with varying external magnetic field. Within the investigated thickness range (2-16 nm), the magnetic coercivity, as evaluated from the width of the hysteresis loops, increases with deposit thickness and reaches a maximum value of ˜160 Oe at around 10 nm. In summary, we present a viable technique to fabricate ferromagnetic nanostructures in a controllable way and gain detailed insight into their chemical and magnetic properties.

  20. Plasmonic Gold Helices for the visible range fabricated by oxygen plasma purification of electron beam induced deposits

    CERN Document Server

    Haverkamp, Caspar; Jäckle, Sara; Manzoni, Anna; Christiansen, Silke

    2016-01-01

    Electron beam induced deposition (EBID) currently provides the only direct writing technique for truly three-dimensional nanostructures with geometrical features below 50 nm. Unfortunately, the depositions from metal-organic precursors suffer from a substantial carbon content. This hinders many applications, especially in plasmonics where the metallic nature of the geometric surfaces is mandatory. To overcome this problem a post-deposition treatment with oxygen plasma at room temperature was investigated for the purification of gold containing EBID structures. Upon plasma treatment, the structures experience a shrinkage in diameter of about 18 nm but entirely keep their initial shape. The proposed purification step results in a core-shell structure with the core consisting of mainly unaffected EBID material and a gold shell of about 20 nm in thickness. These purified structures are plasmonically active in the visible wavelength range as shown by dark field optical microscopy on helical nanostructures. Most no...

  1. High-Quality ZrO2 Thin Films Deposited on Silicon by High Vacuum Electron Beam Evaporation

    Institute of Scientific and Technical Information of China (English)

    章宁琳; 万青; 宋志棠; 沈勤我; 祝向荣; 林成鲁

    2002-01-01

    Zirconium oxide films were deposited on p-type Si(l00) substrates using high vacuum electron beam evaporation (HVEBE) at room temperature. X-ray photoelectric spectroscopy shows that the dominant chemical state of zirconia thin films is in the fully oxidized state of Zr4+, no matter whether annealed in oxygen. The structural information from x-ray diffraction shows that zirconia thin films deposited at room temperature by HVEBEwere completely amorphous before and after the annealing. The spreading resistance profile indicates that ZrO2 thin films have excellent insulation property (with a resistance of more than 10s Ω) and the thickness is 800A.After thermal treatment at 600°C in O2 ambient, the root-mean-square roughness changed from 8.09 A of the as-deposited film to 13.8A across an area of i × 1μm2.

  2. Organic-inorganic nano-composite films for photonic applications made by multi-beam multi-target pulsed laser deposition with remote control of the plume directions

    Science.gov (United States)

    Darwish, Abdalla M.; Moore, Shaelynn; Mohammed, Aziz; Alexander, Deonte'; Bastian, Tyler; Dorlus, Wydglif; Sarkisov, Sergey S.; Patel, Darayas N.; Mele, Paolo; Koplitz, Brent

    2016-09-01

    There has been an explosive interest in the technique of laser assisted deposition of polymer nano-composite films exploiting the matrix assisted pulsed laser evaporation (MAPLE) with regard to the polymer host as can be judged form recent publications.1-4 In MAPLE, a frozen solution of a polymer in a relatively volatile solvent is used as a laser target. The solvent and concentration are selected so that first, the polymer of interest can dissolve to form a dilute, particulate free solution, second, the majority of the laser energy is initially absorbed by the solvent molecules and not by the solute molecules, and third, there is no photochemical reaction between the solvent and the solute. The light-material interaction in MAPLE can be described as a photothermal process. The photon energy absorbed by the solvent is converted to thermal energy that causes the polymer to be heated but the solvent to vaporize. As the surface solvent molecules are evaporated into the gas phase, polymer molecules are exposed at the gas-target matrix interface. The polymer molecules attain sufficient kinetic energy through collective collisions with the evaporating solvent molecules, to be transferred into the gas phase. By careful optimization of the MAPLE deposition conditions (laser wavelength, repetition rate, solvent type, concentration, temperature, and background gas and gas pressure), this process can occur without any significant polymer decomposition. The MAPLE process proceeds layer-by-layer, depleting the target of solvent and polymer in the same concentration as the starting matrix. When a substrate is positioned directly in the path of the plume, a coating starts to form from the evaporated polymer molecules, while the volatile solvent molecules are evacuated by the pump from the deposition chamber. In case of fabrication of polymer nanocomposites, MAPLE targets are usually prepared as nano-colloids of the additives of interest in the initial polymer solutions. Mixing

  3. Fabrication of three-dimensional scaffolds using precision extrusion deposition with an assisted cooling device

    Energy Technology Data Exchange (ETDEWEB)

    Hamid, Q; Snyder, J; Wang, C; Guceri, S; Sun, W [Department of Mechanical Engineering and Mechanics, Drexel University, Philadelphia, PA (United States); Timmer, M; Hammer, J, E-mail: sunwei@drexel.edu [Advanced Technologies and Regenerative Medicine, Somerville, NJ (United States)

    2011-09-15

    In the field of biofabrication, tissue engineering and regenerative medicine, there are many methodologies to fabricate a building block (scaffold) which is unique to the target tissue or organ that facilitates cell growth, attachment, proliferation and/or differentiation. Currently, there are many techniques that fabricate three-dimensional scaffolds; however, there are advantages, limitations and specific tissue focuses of each fabrication technique. The focus of this initiative is to utilize an existing technique and expand the library of biomaterials which can be utilized to fabricate three-dimensional scaffolds rather than focusing on a new fabrication technique. An expanded library of biomaterials will enable the precision extrusion deposition (PED) device to construct three-dimensional scaffolds with enhanced biological, chemical and mechanical cues that will benefit tissue generation. Computer-aided motion and extrusion drive the PED to precisely fabricate micro-scaled scaffolds with biologically inspired, porosity, interconnectivity and internal and external architectures. The high printing resolution, precision and controllability of the PED allow for closer mimicry of tissues and organs. The PED expands its library of biopolymers by introducing an assisting cooling (AC) device which increases the working extrusion temperature from 120 to 250 deg. C. This paper investigates the PED with the integrated AC's capabilities to fabricate three-dimensional scaffolds that support cell growth, attachment and proliferation. Studies carried out in this paper utilized a biopolymer whose melting point is established to be 200 deg. C. This polymer was selected to illustrate the newly developed device's ability to fabricate three-dimensional scaffolds from a new library of biopolymers. Three-dimensional scaffolds fabricated with the integrated AC device should illustrate structural integrity and ability to support cell attachment and proliferation.

  4. A Novel Regeneration Method of Cu(0)-deposited TiO2 Photocatalytic Film: Air-assisted Electrochemical Oxidation

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A rapid deactivation of TiO2 film was observed in the process of the photocatalytic degradation of formic acid in the presence of Cu(II) due to the deposition of Cu(0). A novel regeneration method, air-assisted electrooxidation, could efficiently retrieve the photocatalytic activity of the deact ivated film. HNO3 medium has a regeneration extent of 97.2% for first run, much higher than that of HCl and H2SO4 mediums.

  5. Characteristics and properties of metal aluminum thin films prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology

    Institute of Scientific and Technical Information of China (English)

    Xiong Yu-Qing; Li Xing-Cun; Chen Qiang; Lei Wen-Wen; Zhao Qiao; Sang Li-Jun; Liu Zhong-Wei; Wang Zheng-Duo; Yang Li-Zhen

    2012-01-01

    Metal aluminum (Al) thin films are prepared by 2450 MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas.We focus our attention on the plasma source for the thin-film preparation and annealing of the as-deposited films relative to the surface square resistivity.The square resistivity of as-deposited Al films is greatly reduced after annealing and almost reaches the value of bulk metal.Through chemical and structural analysis,we conclude that the square resistivity is determined by neither the contaminant concentration nor the surface morphology,but by both the crystallinity and crystal size in this process.

  6. Effect of deposition parameters on the structural properties of ZnO nanopowders prepared by microwave-assisted hydrothermal synthesis.

    Science.gov (United States)

    Caglar, Yasemin; Gorgun, Kamuran; Aksoy, Seval

    2015-03-05

    ZnO nanopowders were synthesized via microwave-assisted hydrothermal method at different deposition (microwave irradiation) times and pH values. The effects of pH and deposition (microwave irradiation) time on the crystalline structure and orientation of the ZnO nanopowders have been investigated by X-ray diffraction (XRD) study. XRD observations showed that the crystalline quality of ZnO nanopowders increased with increasing pH value. The crystallite size and texture coefficient values of ZnO nanopowders were calculated. The structural quality of ZnO nanopowder was improved by deposition parameters. Field emission scanning electron microscope (FESEM) was used to analyze the surface morphology of the ZnO nanopowders. Microwave irradiation time and pH value showed a significant effect on the surface morphology.

  7. Aerosol assisted chemical vapour deposition of germanium thin films using organogermanium carboxylates as precursors and formation of germania films

    Indian Academy of Sciences (India)

    Alpa Y Shah; Amey Wadawale; Vijaykumar S Sagoria; Vimal K Jain; C A Betty; S Bhattacharya

    2012-06-01

    Diethyl germanium bis-picolinate, [Et2Ge(O2CC5H4N)2], and trimethyl germanium quinaldate, [Me3Ge(O2CC9H6N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of complexes under nitrogen atmosphere. Germanium thin films were deposited on silicon wafers at 700°C employing AACVD method. These films on oxidation under an oxygen atmosphere at 600°C yield GeO2. Both Ge and GeO2 films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by current–voltage (–) characterization.

  8. Growth of doped silicon nanowires by pulsed laser deposition and their analysis by electron beam induced current imaging

    Energy Technology Data Exchange (ETDEWEB)

    Eisenhawer, B; Berger, A; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Zhang, D; Clavel, R [Laboratory of Robotic Systems, Ecole Polytechnique Federale de Lausanne (EPFL), Station 9, CH-1015 Lausanne (Switzerland); Michler, J, E-mail: bjoern.eisenhawer@ipht-jena.de [Mechanics of Materials and Nanostructures Laboratory, EMPA-Materials Science and Technology, Feuerwerkstrasse 39, CH-3602 Thun (Switzerland)

    2011-02-18

    Doped silicon nanowires (NWs) were epitaxially grown on silicon substrates by pulsed laser deposition following a vapour-liquid-solid process, in which dopants together with silicon atoms were introduced into the gas phase by laser ablation of lightly and highly doped silicon target material. p-n or p{sup ++}-p junctions located at the NW-silicon substrate interfaces were thus realized. To detect these junctions and visualize them the electron beam induced current technique and two-point probe current-voltage measurements were used, based on nanoprobing individual silicon NWs in a scanning electron microscope. Successful silicon NW doping by pulsed laser deposition of doped target material could experimentally be demonstrated. This doping strategy compared to the commonly used doping from the gas phase during chemical vapour deposition is evaluated essentially with a view to potentially overcoming the limitations of chemical vapour deposition doping, which shows doping inhomogeneities between the top and bottom of the NW as well as between the core and shell of NWs and structural lattice defects, especially when high doping levels are envisaged. The pulsed laser deposition doping technique yields homogeneously doped NWs and the doping level can be controlled by the choice of the target material. As a further benefit, this doping procedure does not require the use of poisonous gases and may be applied to grow not only silicon NWs but also other kinds of doped semiconductor NWs, e.g. group III nitrides or arsenides.

  9. Ion beam sputter deposition of Ag films: Influence of process parameters on electrical and optical properties, and average grain sizes

    Energy Technology Data Exchange (ETDEWEB)

    Bundesmann, C., E-mail: carsten.bundesmann@iom-leipzig.de; Feder, R.; Gerlach, J.W.; Neumann, H.

    2014-01-31

    Ion beam sputter deposition is used to grow several sets of Ag films under systematic variation of ion beam parameters, such as ion species and ion energy, and geometrical parameters, such as ion incidence angle and polar emission angle. The films are characterized concerning their thickness by profilometry, their electrical properties by 4-point-probe-measurements, their optical properties by spectroscopic ellipsometry, and their average grain sizes by X-ray diffraction. Systematic influences of the growth parameters on film properties are revealed. The film thicknesses show a cosine-like angular distribution. The electrical resistivity increases for all sets with increasing emission angle and is found to be considerably smaller for Ag films grown by sputtering with Xe ions than for the Ag films grown by sputtering with Ar ions. Increasing the ion energy or the ion incidence angle also increases the electrical resistivity. The optical properties, which are the result of free charge carrier absorption, follow the same trends. The observed trends can be partly assigned to changes in the average grain size, which are tentatively attributed to different energetic and angular distributions of the sputtered and back-scattered particles. - Highlights: • Ion beam sputter deposition under systematic variation of process parameters. • Film characterization: thickness, electrical, optical and structural properties. • Electrical resistivity changes considerably with ion species and polar emission angle. • Electrical and optical data reveal a strong correlation with grain sizes. • Change of film properties related to changing properties of film-forming particles.

  10. Energy deposition of H and He ion beams in hydroxyapatite films: A study with implications for ion-beam cancer therapy

    Science.gov (United States)

    Limandri, Silvina; de Vera, Pablo; Fadanelli, Raul C.; Nagamine, Luiz C. C. M.; Mello, Alexandre; Garcia-Molina, Rafael; Behar, Moni; Abril, Isabel

    2014-02-01

    Ion-beam cancer therapy is a promising technique to treat deep-seated tumors; however, for an accurate treatment planning, the energy deposition by the ions must be well known both in soft and hard human tissues. Although the energy loss of ions in water and other organic and biological materials is fairly well known, scarce information is available for the hard tissues (i.e., bone), for which the current stopping power information relies on the application of simple additivity rules to atomic data. Especially, more knowledge is needed for the main constituent of human bone, calcium hydroxyapatite (HAp), which constitutes 58% of its mass composition. In this work the energy loss of H and He ion beams in HAp films has been obtained experimentally. The experiments have been performed using the Rutherford backscattering technique in an energy range of 450-2000 keV for H and 400-5000 keV for He ions. These measurements are used as a benchmark for theoretical calculations (stopping power and mean excitation energy) based on the dielectric formalism together with the MELF-GOS (Mermin energy loss function-generalized oscillator strength) method to describe the electronic excitation spectrum of HAp. The stopping power calculations are in good agreement with the experiments. Even though these experimental data are obtained for low projectile energies compared with the ones used in hadron therapy, they validate the mean excitation energy obtained theoretically, which is the fundamental quantity to accurately assess energy deposition and depth-dose curves of ion beams at clinically relevant high energies. The effect of the mean excitation energy choice on the depth-dose profile is discussed on the basis of detailed simulations. Finally, implications of the present work on the energy loss of charged particles in human cortical bone are remarked.

  11. Properties of high k gate dielectric gadolinium oxide deposited on Si (1 0 0) by dual ion beam deposition (DIBD)

    Science.gov (United States)

    Zhou, Jian-Ping; Chai, Chun-Lin; Yang, Shao-Yan; Liu, Zhi-Kai; Song, Shu-Lin; Li, Yan-Li; Chen, Nuo-Fu

    2004-09-01

    Gadolinium oxide thin films have been prepared on silicon (1 0 0) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation (4 bar 0 2) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (2 0 2), and finally, the cubic structure appeared at the substrate temperature of 700 °C, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented.

  12. Simulation of the secondary electrons energy deposition produced by proton beams in PMMA: influence of the target electronic excitation description

    Science.gov (United States)

    Dapor, Maurizio; Abril, Isabel; de Vera, Pablo; Garcia-Molina, Rafael

    2015-06-01

    We have studied the radial dependence of the energy deposition of the secondary electron generated by swift proton beams incident with energies T = 50 keV-5 MeV on poly(methylmethacrylate) (PMMA). Two different approaches have been used to model the electronic excitation spectrum of PMMA through its energy loss function (ELF), namely the extended-Drude ELF and the Mermin ELF. The singly differential cross section and the total cross section for ionization, as well as the average energy of the generated secondary electrons, show sizeable differences at T ⩽ 0.1 MeV when evaluated with these two ELF models. In order to know the radial distribution around the proton track of the energy deposited by the cascade of secondary electrons, a simulation has been performed that follows the motion of the electrons through the target taking into account both the inelastic interactions (via electronic ionizations and excitations as well as electron-phonon and electron trapping by polaron creation) and the elastic interactions. The radial distribution of the energy deposited by the secondary electrons around the proton track shows notable differences between the simulations performed with the extended-Drude ELF or the Mermin ELF, being the former more spread out (and, therefore, less peaked) than the latter. The highest intensity and sharpness of the deposited energy distributions takes place for proton beams incident with T ~ 0.1-1 MeV. We have also studied the influence in the radial distribution of deposited energy of using a full energy distribution of secondary electrons generated by proton impact or using a single value (namely, the average value of the distribution); our results show that differences between both simulations become important for proton energies larger than ~0.1 MeV. The results presented in this work have potential applications in materials science, as well as hadron therapy (due to the use of PMMA as a tissue phantom) in order to properly consider the

  13. Beam-assisted large elongation of in situ formed Li2O nanowires

    Science.gov (United States)

    Zheng, He; Liu, Yang; Mao, Scott X.; Wang, Jianbo; Huang, Jian Yu

    2012-07-01

    As an important component of the solid electrolyte interface in lithium ion batteries and an effective blanket breeding material in fusion reactor, the mechanical property of Li2O is of great interest but is not well understood. Here we show that the polycrystalline Li2O nanowires were formed in situ by touching and pulling lithium hydroxide under electron beam (e-beam) illumination. The Li2O nanowires sustained an enhanced elongation (from 80% to 176%) under low dose e-beam irradiation near room temperature as compared with that (from 51% to 57%) without e-beam irradiation. The extremely high deformability could be understood by the fast Li2O diffusion under e-beam irradiation and tensile stress condition. The large elongation without e-beam irradiation implies that nano-structured Li2O is ductile near room temperature.

  14. A study of the energy deposition profile of proton beams in materials of hadron therapeutic interest.

    Science.gov (United States)

    Garcia-Molina, Rafael; Abril, Isabel; de Vera, Pablo; Kyriakou, Ioanna; Emfietzoglou, Dimitris

    2014-01-01

    The energy delivered by a swift proton beam in materials of interest to hadron therapy (liquid water, polymethylmethacrylate or polystyrene) is investigated. An explicit condensed-state description of the target excitation spectrum based on the dielectric formalism is used to calculate the energy-loss rate of the beam in the irradiated materials. This magnitude is the main input in the simulation code SEICS (Simulation of Energetic Ions and Clusters through Solids) used to evaluate the dose as a function of the penetration depth and radial distance from the beam axis.

  15. Deposition of YBCO Thin Film by Aerosol Assisted Spray Pyrolysis Method using Nitrate Precursors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Byeong Joo; Hong, Seok Kwan; Lee, Jong Beom; Lee, Hee Gyoun; Hong, Gye Won [Korea Polytechnic University, Siheung (Korea, Republic of); Kim, Jae Geun [ISEM, University of Wollongong, Wollongong (Korea, Republic of)

    2010-10-15

    Y123 films have been deposited on (100) single-crystal and IBAD substrates by spray pyrolysis method using nitrate precursors. Ultrasonic atomization was adopted to decrease the droplet size, spraying angle and its moving velocity toward substrate for introducing the preheating tube furnace in appropriate location. A small preheating tube furnace was installed between spraying nozzle and substrate for fast drying and enhanced decomposition of precursors. C-axis oriented films were obtained on both LAO and IBAD substrates at deposition temperature of around and working pressures of 10-15 torr. Thick c-axis epitaxial film with the thickness of was obtained on LAO single-crystal by 10 min deposition. But the XRD results of the film deposited on IBAD template at same deposition condition showed that the buffer layers of the IBAD metal substrate was affected by long residence of metal substrate at high temperature for YBCO deposition.

  16. Double-beam pulsed laser deposition for the growth of Al-incorporated ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, L. [Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Circuito Exterior S/N, Ciudad Universitaria, AP 70-186, C.P. 04510 México D.F., México (Mexico); Sánchez-Aké, C., E-mail: citlali.sanchez@ccadet.unam.mx [Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Circuito Exterior S/N, Ciudad Universitaria, AP 70-186, C.P. 04510 México D.F., México (Mexico); Bizarro, M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-186, C.P. 04510 México D.F., México (Mexico)

    2014-05-01

    Pulsed laser deposition in a delayed-double beam configuration is used to incorporate in situ Al in ZnO thin films. In this configuration, two synchronized pulsed-laser beams are employed to ablate independently a ZnO and an Al target. We investigated the effects of relative time delay of plasma plumes on the composition of the films with the aim of evaluating the performance of this technique to produce doped materials. Relative delay between plumes was found to control the incorporation of Al in the film in the range from 14% to 30%. However, to produce low impurity concentration of Al-doped ZnO (with Al incorporation less than 2%) the fluence used to produce the plasmas has more influence over the film composition than the relative plume delay. The minimum incorporation of Al corresponded to a relative delay of 0 μs, due to the interaction between plumes during their expansion.

  17. Atomic radical abatement of organic impurities from electron beam deposited metallic structures

    NARCIS (Netherlands)

    Wnuk, J.D.; Gorham, J.M.; Rosenberg, S.G.; Madey, T.E.; Hagen, C.W.; Fairbrother, D.H.

    2010-01-01

    Focused electron beam induced processing (FEBIP) of volatile organometallic precursors has become an effective and versatile method of fabricating metal-containing nanostructures. However, the electron stimulated decomposition process responsible for the growth of these nanostructures traps much of

  18. Distribution of Energy Deposited in Plastic Tubing and Copper-Wire Insulation by Electron Beam Irradiation

    DEFF Research Database (Denmark)

    Pedersen, Walther Batsberg; Miller, Arne; Pejtersen, K.

    1978-01-01

    Scanned electron beam treatment is used to improve the physical properties of certain polymers, such as shrinkable plastic tubing and insulated wire and cable. Tubing or wires are passed at high speed under the beam scanner, and the material is irradiated to absorbed doses of several Mrad...... as uniformly as possible, usually by means of a multipass arrangement. In the present study, using irradiation by a scanned 0.4 MeV electron beam, measurements were made of high-resolution distributions of absorbed dose in polyethylene tubing and copper wire coated with polyethylene, nylon, or polyvinyl...... chloride insulation. Radiochromic dye films equivalent to the insulating materials were used as accurate dosimeters having a response independent of dose rate. Irradiations were in various geometries, wire and plastic thicknesses, positions along the beam scan, and with different backing materials near...

  19. Effect of Hydrogen ion beam irradiation onto the FIR reflectivity of pulsed laser deposited mirror like Tungsten films

    Energy Technology Data Exchange (ETDEWEB)

    Mostako, A.T.T. [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781 039 (India); Khare, Alika, E-mail: alika@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781 039 (India); Rao, C.V.S.; Raole, Prakash M.; Vala, Sudhirsinh; Jakhar, Shrichand; Basu, T.K.; Abhangi, Mitul; Makwana, Rajinikant J. [Institute for Plasma Research, Bhat, Gandhinagar 382 428 (India)

    2012-04-15

    Graphical abstract: The specular FIR reflectivity of the W{sub 1}, W{sub 2}, W{sub 3} and W{sub 4} mirrors before and after 8 keV Hydrogen ion beam irradiation. Highlights: Black-Right-Pointing-Pointer Mirror like W thin films were obtained via PLD. Black-Right-Pointing-Pointer The maximum thickness of the Tungsten thin film was {approx}324 nm. Black-Right-Pointing-Pointer Effect of H-ion beam irradiation on the quality of PLD W mirror is reported. Black-Right-Pointing-Pointer Post exposure reflectivity of Tungsten thin films was hardly changed by 2%. - Abstract: The optical quality of the First Mirrors (FMs) of a fusion device (burning plasma experiments, ITER) deteriorates due to the erosion by charge exchange neutrals, re-deposition of the eroded material and the lattice damage by the bombardment of the high energetic particles. This degradation of the optical quality of the plasma facing components in such a harsh environment is a serious concern for the reliability of the spectroscopic based optical diagnostics using FM of a fusion device. In this paper, the effect of 8 keV Hydrogen ion beam irradiation onto the FIR reflectivity of Tungsten thin film mirror is presented. The Tungsten thin films were prepared via Pulsed Laser Deposition (PLD) technique. The Tungsten mirrors were subjected to X-ray Diffraction (XRD), Energy Dispersive X-ray (EDX), Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) for characterization. The specular reflectivities of the Tungsten mirrors before and after exposure to ion beam were recorded with Fourier Transform of Infra-Red (FTIR) technique. The ion penetration depth and straggle into Tungsten thin film and stainless steel (SS) substrate were estimated by Transport of Ions in Matter (TIRM) simulation code. The changes in post exposure IR reflectivity were interpreted in terms of these parameters.

  20. High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    McSkimming, Brian M., E-mail: mcskimming@engineering.ucsb.edu; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States); Chaix, Catherine [RIBER S.A., 3a Rue Casimir Périer, BP 70083, 95873 Bezons Cedex (France)

    2015-09-15

    In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen plasma source that provides active nitrogen fluxes more than 30 times higher than those commonly used for plasma assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) and thus a significantly higher growth rate than has been previously reported. GaN films were grown using N{sub 2} gas flow rates between 5 and 25 sccm while varying the plasma source's RF forward power from 200 to 600 W. The highest growth rate, and therefore the highest active nitrogen flux, achieved was ∼7.6 μm/h. For optimized growth conditions, the surfaces displayed a clear step-terrace structure with an average RMS roughness (3 × 3 μm) on the order of 1 nm. Secondary ion mass spectroscopy impurity analysis demonstrates oxygen and hydrogen incorporation of 1 × 10{sup 16} and ∼5 × 10{sup 17}, respectively. In addition, the authors have achieved PAMBE growth of GaN at a substrate temperature more than 150 °C greater than our standard Ga rich GaN growth regime and ∼100 °C greater than any previously reported PAMBE growth of GaN. This growth temperature corresponds to GaN decomposition in vacuum of more than 20 nm/min; a regime previously unattainable with conventional nitrogen plasma sources. Arrhenius analysis of the decomposition rate shows that samples with a flux ratio below stoichiometry have an activation energy greater than decomposition of GaN in vacuum while samples grown at or above stoichiometry have decreased activation energy. The activation energy of decomposition for GaN in vacuum was previously determined to be ∼3.1 eV. For a Ga/N flux ratio of ∼1.5, this activation energy was found to be ∼2.8 eV, while for a Ga/N flux ratio of ∼0.5, it was found to be ∼7.9 eV.

  1. Damage evaluation in metal structures subjected to high energy deposition due to particle beams

    CERN Document Server

    Peroni, L; Dallocchio, A

    2011-01-01

    The unprecedented energy intensities of modern hadron accelerators yield special problems with the materials that are placed close to or into the high intensity beams. The energy stored in a single beam of LHC particle accelerator is equivalent to about 80 kg of TNT explosive, stored in a transverse beam area with a typical value of 0.2 mm×0.2 mm. The materials placed close to the beam are used at, or even beyond, their damage limits. However, it is very difficult to predict structural efficiency and robustness accurately: beam-induced damage for high energy and high intensity occurs in a regime where practical experience does not exist. The interaction between high energy particle beams and metals induces a sudden non uniform temperature increase. This provokes a dynamic response of the structure entailing thermal stress waves and thermally induced vibrations or even the failure of the component. This study is performed in order to estimate the damage on a copper component due to the impact with a 7 TeV pro...

  2. Oxidation of nanostructured Ti films produced by low energy cluster beam deposition: An X-ray Photoelectron Spectroscopy characterization

    Energy Technology Data Exchange (ETDEWEB)

    Simone, Monica de, E-mail: desimone@tasc.infm.it [CNR-IOM Laboratorio TASC, Area Science Park Basovizza, 34149 Trieste (Italy); Snidero, Elena [CNR-IOM Laboratorio TASC, Area Science Park Basovizza, 34149 Trieste (Italy); Coreno, Marcello [CNR-IMIP, c/o Laboratorio TASC Area Science Park Basovizza, 34149 Trieste (Italy); Sincrotrone Trieste ScpA, Area Science Park Basovizza, 34149 Trieste (Italy); Bongiorno, Gero [Fondazione Filarete, v.le Ortles 22/4, 20139 Milano (Italy); Giorgetti, Luca [Istituto Europeo di Oncologia, Dip. di Oncologia Sperimentale, Via Adamello 16, 20139, Milano (Italy); Amati, Matteo [Sincrotrone Trieste ScpA, Area Science Park Basovizza, 34149 Trieste (Italy); Cepek, Cinzia [CNR-IOM Laboratorio TASC, Area Science Park Basovizza, 34149 Trieste (Italy)

    2012-05-01

    We used in-situ X-ray Photoelectron Spectroscopy (XPS) to study the oxidation process of a cluster-assembled metallic titanium film exposed to molecular oxygen at room temperature. The nanostructured film has been grown on a Si(111) substrate, in ultra high vacuum conditions, by coupling a supersonic cluster beam deposition system with an XPS experimental chamber. Our results show that upon in-situ oxygen exposure Ti{sup 3+} is the first oxidation state observed, followed by Ti{sup 4+}, whereas Ti{sup 2+} is practically absent during the whole process. Our results compare well with the existing literature on Ti films produced using other techniques.

  3. Analysis on Residual Stress in Electron Beam-Physical Vapor Deposited Thermal Barrier Coating using Hard Synchrotron X-Rays

    OpenAIRE

    鈴木, 賢治; 松本, 一秀; 久保, 貴博; 町屋, 修太郎; 田中, 啓介; 秋庭, 義明; SUZUKI, Kenji; MATSUMOTO, Kazuhide; Kubo, Takahiro; Machiya, Syutaro; Tanaka, Keisuke; Akiniwa, Yoshiaki

    2005-01-01

    The distribution of the residual stress in the thermal barrier coating, which was made by an electron beam-physical vapor deposition (EB-PVD) method, was determined using X-ray stress measurements. As the bond coating, NiCoCrAlY was low-pressure plasma sprayed on the substrate of austenitic stainless steel. The 8 mass% Y_2O_3-ZrO_2 was coated on the bond coating using the EB-PVD method as the top coating. The top coating had the preferred orientation with the axis direction perpendicular to ...

  4. Microstructural characterization of electron beam-physical vapor deposition thermal barrier coatings through high-resolution computed microtomography

    Science.gov (United States)

    Kulkarni, Anand; Herman, Herbert; Decarlo, Francesco; Subramanian, Ramesh

    2004-07-01

    Thermal barrier coatings (TBCs), deposited using the electron beam-physical vapor deposition (EB-PVD) process, comprise a unique architecture of porosity capable of bridging the technological gap between insulation/life extension and prime reliance. The TBC microstructures consist of columnar structure, nucleated via vapor condensation, along with a high degree of intercolumnar porosity, thus providing enhanced stress relief on thermomechanical loading and also accommodating misfit stresses resulting from CTE mismatch. In this article, we report the characterization of these coatings using high-resolution synchrotron-based X-ray computed microtomography (XMT) at 1.3- µm resolution. Experiments focused on quantitative characterization/visualization of imperfections in these coatings and on the relative changes in microstructural features upon isothermal annealing. The influence of time/temperature of exposure was investigated and the results were correlated with elastic modulus.

  5. Properties of ZnO thin films grown at room temperature by using ionized cluster beam deposition

    CERN Document Server

    Whangbo, S W; Kim, S G; Cho, M H; Jeong, K H; Whang, C N

    2000-01-01

    ZnO films with a thickness of 120 nm were deposited on Si(100) at room temperature by using the reactive-ionized cluster beam deposition technique. The effects of the acceleration voltage (V sub a) on the properties, such as the crystallinity, the induced film strain, the surface roughness, and the electrical and the optical properties of the films, were investigated. The ZnO films had only a (002) crystalline orientation and uniformly composed through the whole thickness. As the V sub a increased, more strain was induced in the film, and the packing density caused by the structural imperfection was lowered. The films prepared under the optimum condition (V sub a = 3 kV) on a glass substrate showed good optical transmittance, and the band-gap of the film was evaluated to be 3.32 eV.

  6. Deposition of Diamond-Like carbon Films by High-Intensity Pulsed Ion Beam Ablation at Various Substrate Temperatures

    Institute of Scientific and Technical Information of China (English)

    梅显秀; 刘振民; 马腾才; 董闯

    2003-01-01

    Diamond-like carbon (DLC) films have been deposited on to Si substrates at substrate temperatures from 25℃to 400 ℃ by a high-intensity pulsed-ion-beam (HIPIB) ablation deposition technique. The formation of DLC is confirmed by Raman spectroscopy. According to an x-ray photoelectron spectroscopy analysis, the concentration of spa carbon in the films is about 40% when the substrate temperature is below 300 ℃. With increasing substrate temperature from 25 ℃ to 400 ℃, the concentration of sp3 carbon decreases from 43% to 8%. In other words,sp3 carbon is graphitized into sp2 carbon when the substrate temperature is above 300 ℃. The results of xray diffraction and atomic force microscopy show that, with increasing the substrate temperature, the surface roughness and the friction coefficient increase, and the microhardness and the residual stress of the films decrease.

  7. Deposition of cobalt and nickel sulfide thin films from thio- and alkylthio-urea complexes as precursors via the aerosol assisted chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mgabi, L.P.; Dladla, B.S. [Department of Chemistry, University of Zululand, Private bag X1001 KwaDlangezwa, 3880 (South Africa); Malik, M.A. [School of Chemistry, The University of Manchester, Oxford Road, Manchester M13 9PL (United Kingdom); Garje, Shivram S. [Department of Chemistry, University of Mumbai, Vidyanagari, Santacruz (East), Mumbai 400098 (India); Akhtar, J. [Nanoscience and Materials Synthesis Lab, Department of Physics, COMSATS, Institute of Information Technology (CIIT), Chak shahzad, Islamabad (Pakistan); Revaprasadu, N., E-mail: RevaprasaduN@unizulu.ac.za [Department of Chemistry, University of Zululand, Private bag X1001 KwaDlangezwa, 3880 (South Africa)

    2014-08-01

    We report the synthesis of Co(II) and Ni(II) thiourea and alkylthiourea complexes by reacting the metal salts (CoCl{sub 2} and NiCl{sub 2}) with the thiourea, phenylthiourea and dicyclohexylthiourea ligands in a 1:2 ratio. The complexes, [CoCl{sub 2}(CS(NH{sub 2}){sub 2}){sub 2}] (I), [CoCl{sub 2}(CSNHC{sub 6}H{sub 5}NH{sub 2}){sub 2} (II) and [CoCI{sub 2}(SC(NHC{sub 6}H{sub 11}){sub 2}){sub 2}] (III), [NiCl{sub 2}(CS(NH{sub 2}){sub 2}){sub 2}] (IV), [NiCl{sub 2}(CSNHC{sub 6}H{sub 5}NH{sub 2}){sub 2}] (V) and [NiCl{sub 2}(SC(NHC{sub 6}H{sub 11}){sub 2}){sub 2}] (VI) were characterized by C, H, N analysis and Fourier transform infrared spectroscopy. Thermogravimetric analysis shows that all complexes undergo a two step decomposition process except for [NiCl{sub 2}(CSNHC{sub 6}H{sub 5}NH{sub 2}){sub 2}] (V) which decomposes in a single step. The complexes were used as single-source precursors for the deposition of cobalt sulfide and nickel sulfide thin films by aerosol assisted chemical vapor deposition at temperatures between 350 an 500 °C. The crystallinity of the films was determined by X-ray diffraction and their morphology was determined by scanning electron microscopy. The morphology of the cobalt sulfide thin films varies from randomly oriented platelets, to granulated spheres and cubes as the precursor and deposition conditions are changed. For nickel sulfide, the [NiCl{sub 2}(CS(NH{sub 2}){sub 2}){sub 2}] (IV) complex gave rods whereas the [NiCl{sub 2}(CSNHC{sub 6}H{sub 5}NH{sub 2}){sub 2}] (V) produced spherical particles. - Highlights: • We report the synthesis of Co(II) and Ni(II) thiourea and alkylthiourea complexes. • C, H, N analysis and Fourier transform infrared spectroscopy characterization • NiS and CoS thin films deposited by aerosol assisted chemical vapor deposition • X-ray diffraction characterization of the phase of the films • Film morphology determined by scanning electron microscopy.

  8. Investigation of the physical properties of ion assisted ZrN thin films deposited by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Signore, M A; Valerini, D; Rizzo, A; Tapfer, L; Capodieci, L; Cappello, A [ENEA, Department of Physical Technologies and New Materials, SS7, Appia, km 706, 72100 Brindisi (Italy)

    2010-06-09

    Ion bombardment during thin film growth is known to cause structural and morphological changes in the deposited films, thus affecting their physical properties. In this work zirconium nitride films have been deposited by the ion assisted magnetron sputtering technique. The ion energy is controlled by varying the voltage applied to the substrate in the range 0-25 V. The deposited ZrN films are characterized for their structure, surface roughness, oxygen contamination, optical reflectance and electrical resistivity. With increasing substrate voltage crystallinity of the films is enhanced with a preferential orientation of the ZrN grains having the (1 1 1) axis perpendicular to the substrate surface. At the same time, a decrease in electrical resistivity and oxygen contamination content is observed up to 20 V. A higher substrate voltage (25 V) causes an inversion in the observed experimental trends. The role of oxygen contamination decrease and generation of nitrogen vacancies due to ionic assistance have been considered as a possible explanation for the experimental results.

  9. Nanoparticle-Assisted Diffusion Brazing of Metal Microchannel Arrays: Nanoparticle Synthesis, Deposition, and Characterization

    Science.gov (United States)

    Eluri, Ravindranadh T.

    Microchannel process technology (MPT) offers several advantages to the field of nanomanufacturing: 1) improved process control over very short time intervals owing to shorter diffusional distances; and 2) reduced reactor size due to high surface area to volume ratios and enhanced heat and mass transfer. The objective of this thesis was to consider how nanomaterials, produced in part using MPT, could be used to solve problems associated with the fabrication of MPT devices. Specifically, many MPT devices are produced using transient liquid-phase brazing involving an electroplated interlayer consisting of a brazing alloy designed for melting temperature suppression. Unfortunately, these alloys can form brittle secondary phases which significantly reduce bond strength. In contrast, prior efforts have shown that it is possible to leverage the size-dependent properties of nanomaterials to suppress brazing temperatures. In this prior work, thin films of off-the-shelf elemental nanoparticles were used as interlayers yielding joints with improved mechanical properties. In the present investigation, efforts have been made to characterize the synthesis and deposition of various elemental nanoparticle suspensions for use in the transient liquid-phase brazing of aluminum and stainless steel. Advances were used to demonstrate the nanoparticle-assisted diffusion brazing of a microchannel array. In the first section, a silver nanoparticle (AgNP) interlayer was produced for the diffusion brazing of heat exchanger aluminum. Efforts are made to examine the effect of braze filler particle size (˜5 nm and ˜50 nm) and processing parameters (heating rate: 5ºC/min and 25ºC/min; brazing temperature: 550ºC and 570ºC) on thin coupons of diffusion-brazed 3003 Al. A tensile strength of 69.7 MPa was achieved for a sample brazed at 570°C for 30 min under 1 MPa with an interlayer thickness of approximately 7 microm. Further suppression of the brazing temperature to 500ºC was achieved by

  10. Structural and composition investigations at delayered locations of low k integrated circuit device by gas-assisted focused ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dandan, E-mail: dandan.wang@globalfoundries.com; Kee Tan, Pik; Yamin Huang, Maggie; Lam, Jeffrey; Mai, Zhihong [Technology Development Department, GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (Singapore)

    2014-05-15

    The authors report a new delayering technique – gas-assisted focused ion beam (FIB) method and its effects on the top layer materials of integrated circuit (IC) device. It demonstrates a highly efficient failure analysis with investigations on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive x-ray spectroscopy and Fourier transform infrared analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB delayering open up a new insight avenue for the failure analysis in IC devices.

  11. Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (2021) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sawicka, M.; Grzanka, S.; Skierbiszewski, C. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland); TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw (Poland); Cheze, C. [TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw (Poland); Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Turski, H.; Muziol, G.; Krysko, M.; Grzanka, E.; Sochacki, T. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland); Hauswald, C.; Brandt, O. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Siekacz, M. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland); Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Kucharski, R. [Ammono S.A., Czerwonego Krzyza 2/31, 00-377 Warsaw (Poland); Remmele, T.; Albrecht, M. [Leibniz Institute for Crystal Growth, Max-Born Strasse 2, Berlin 12489 (Germany)

    2013-03-18

    Multi-quantum well (MQW) structures and light emitting diodes (LEDs) were grown on semipolar (2021) and polar (0001) GaN substrates by plasma-assisted molecular beam epitaxy. The In incorporation efficiency was found to be significantly lower for the semipolar plane as compared to the polar one. The semipolar MQWs exhibit a smooth surface morphology, abrupt interfaces, and a high photoluminescence intensity. The electroluminescence of semipolar (2021) and polar (0001) LEDs fabricated in the same growth run peaks at 387 and 462 nm, respectively. Semipolar LEDs with additional (Al,Ga)N cladding layers exhibit a higher optical output power but simultaneously a higher turn-on voltage.

  12. Internal transport barrier triggered by non-linear lower hybrid wave deposition under condition of beam-driven toroidal rotation

    Science.gov (United States)

    Gao, Q. D.; Budny, R. V.

    2015-03-01

    By using gyro-Landau fluid transport model (GLF23), time-dependent integrated modeling is carried out using TRANSP to explore the dynamic process of internal transport barrier (ITB) formation in the neutral beam heating discharges. When the current profile is controlled by LHCD (lower hybrid current drive), with appropriate neutral beam injection, the nonlinear interplay between the transport determined gradients in the plasma temperature (Ti,e) and toroidal velocity (Vϕ) and the E×B flow shear (including q-profile) produces transport bifurcations, generating spontaneously a stepwise growing ITB. In the discharge, the constraints imposed by the wave propagation condition causes interplay of the LH driven current distribution with the plasma configuration modification, which constitutes non-linearity in the LH wave deposition. The non-linear effects cause bifurcation in LHCD, generating two distinct quasi-stationary reversed magnetic shear configurations. The change of current profile during the transition period between the two quasi-stationary states results in increase of the E×B shearing flow arising from toroidal rotation. The turbulence transport suppression by sheared E×B flow during the ITB development is analysed, and the temporal evolution of some parameters characterized the plasma confinement is examined. Ample evidence shows that onset of the ITB development is correlated with the enhancement of E×B shearing rate caused by the bifurcation in LHCD. It is suggested that the ITB triggering is associated with the non-linear effects of the LH power deposition.

  13. Ionic liquid-assisted growth of DBTTF-TCNQ complex organic crystals by vacuum co-deposition

    Science.gov (United States)

    Kuroishi, Kohei; Maruyama, Shingo; Ohashi, Noboru; Watanabe, Mio; Naito, Kenta; Matsumoto, Yuji

    2016-11-01

    High-crystalline DBTTF-TCNQ charge-transfer complex crystals with larger grains visible even by an optical microscope have been successfully grown, assisted by ionic liquid (IL) in vacuum co-deposition. Although the charge transfer reaction between the DBTTF and TCNQ molecules was ready to occur to form the complex regardless of the presence or absence of the IL even at room temperature, the subsequent crystal growth of the DBTTF-TCNQ complexes was enhanced by the IL, especially much more at temperatures higher than room temperature, leading to a significant improvement in the crystallinity of the complexes. The crystal growth mechanism of the DBTTF-TCNQ complexes in the IL was discussed based on the results of in situ optical microscope observation during the deposition of the DBTTF and TCNQ molecules into the IL.

  14. Deposition of matrix-free fullerene films with improved morphology by matrix-assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Canulescu, Stela; Schou, Jørgen; Fæster, Søren;

    2013-01-01

    Thin films of C60 were deposited by matrix-assisted pulsed laser evaporation (MAPLE) from a frozen target of anisole with 0.67 wt% C60. Above a fluence of 1.5 J/cm2 the C60 films are strongly non-uniform and are resulting from transfer of matrix-droplets containing fullerenes. At low fluence...... the fullerene molecules in the films are intact, the surface morphology is substantially improved and there are no measurable traces of the matrix molecules in the film. This may indicate a regime of dominant evaporation at low fluence which merges into the MAPLE regime of liquid ejection of the host matrix...

  15. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    Energy Technology Data Exchange (ETDEWEB)

    Knoops, Harm C. M., E-mail: h.c.m.knoops@tue.nl, E-mail: w.m.m.kessels@tue.nl [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Oxford Instruments Plasma Technology, North End, Bristol BS49 4AP (United Kingdom); Peuter, K. de; Kessels, W. M. M., E-mail: h.c.m.knoops@tue.nl, E-mail: w.m.m.kessels@tue.nl [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

    2015-07-06

    The requirements on the material properties and growth control of silicon nitride (SiN{sub x}) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiN{sub x} by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiN{sub x} by plasma-assisted ALD and that this parameter can be linked to a so-called “redeposition effect”. This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiN{sub x} ALD using SiH{sub 2}(NH{sup t}Bu){sub 2} as precursor and N{sub 2} plasma as reactant, the gas residence time τ was found to determine both SiN{sub x} film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.

  16. Evaluation of Beam Losses and Energy Depositions for a Possible Phase II Design for LHC Collimation

    CERN Document Server

    Lari, L; Bracco, C; Brugger, M; Cerutti, F; Doyle, E; Ferrari, A; Keller, L; Lundgren, S; Keller, L; Mauri, M; Redaelli, S; Sarchiapone, L; Smith, J; Vlachoudis, V; Weiler, T

    2008-01-01

    The LHC beams are designed to have high stability and to be stored for many hours. The nominal beam intensity lifetime is expected to be of the order of 20h. The Phase II collimation system has to be able to handle particle losses in stable physics conditions at 7 TeV in order to avoid beam aborts and to allow correction of parameters and restoration to nominal conditions. Monte Carlo simulations are needed in order to evaluate the behavior of metallic high-Z collimators during operation scenarios using a realistic distribution of losses, which is a mix of the three limiting halo cases. Moreover, the consequences in the IR7 insertion of the worst (case) abnormal beam loss are evaluated. The case refers to a spontaneous trigger of the horizontal extraction kicker at top energy, when Phase II collimators are used. These studies are an important input for engineering design of the collimation Phase II system and for the evaluation of their effect on adjacent components. The goal is to build collimators that can ...

  17. Durable Silver Mirror Coating Via Ion Assisted, Electron Beam Evaporation For Large Aperture Optics Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In the Phase I research, Surface Optics Corporation (SOC) demonstrated a durable silver mirror coating based an ion assisted, thermal evaporation process. The recipe...

  18. Low-energy ion beam-based deposition of gallium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Vasquez, M. R., E-mail: mrvasquez@coe.upd.edu.ph [Department of Mining, Metallurgical, and Materials Engineering, College of Engineering, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Wada, M. [Graduate School of Science and Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321 (Japan)

    2016-02-15

    An ion source with a remote plasma chamber excited by a 13.56 MHz radio frequency power was used for low-energy broad ion beam extraction. Optical emission spectral analyses showed the sputtering and postionization of a liquid gallium (Ga) target placed in a chamber separated from the source bombarded by argon (Ar) plasma guided by a bent magnetic field. In addition, an E × B probe successfully showed the extraction of low-energy Ga and Ar ion beams using a dual-electrode extractor configuration. By introducing dilute amounts of nitrogen gas into the system, formation of thin Ga-based films on a silicon substrate was demonstrated as determined from X-ray diffraction and X-ray reflectivity studies.

  19. Low-energy ion beam-based deposition of gallium nitride.

    Science.gov (United States)

    Vasquez, M R; Wada, M

    2016-02-01

    An ion source with a remote plasma chamber excited by a 13.56 MHz radio frequency power was used for low-energy broad ion beam extraction. Optical emission spectral analyses showed the sputtering and postionization of a liquid gallium (Ga) target placed in a chamber separated from the source bombarded by argon (Ar) plasma guided by a bent magnetic field. In addition, an E × B probe successfully showed the extraction of low-energy Ga and Ar ion beams using a dual-electrode extractor configuration. By introducing dilute amounts of nitrogen gas into the system, formation of thin Ga-based films on a silicon substrate was demonstrated as determined from X-ray diffraction and X-ray reflectivity studies.

  20. Analytical model of ionization and energy deposition by proton beams in subcellular compartments

    Science.gov (United States)

    de Vera, Pablo; Surdutovich, Eugene; Abril, Isabel; Garcia-Molina, Rafael; Solov'yov, Andrey V.

    2014-04-01

    We present an analytical model to evaluate in a fast, simple and effective manner the energy delivered by proton beams moving through a cell model made of nucleus and cytoplasm, taking into account the energy carried by the secondary electrons generated along the proton tracks. The electronic excitation spectra of these subcellular compartments have been modelled by means of an empirical parameterization of their dielectric properties. The energy loss rate and target ionization probability induced by swift protons are evaluated by means of the dielectric formalism. With the present model we have quantified the energy delivered, the specific energy, and the number of ionizations produced per incoming ion in a typical human cell by a typical hadrontherapy proton beam having energies usually reached around the Bragg peak (below 20 MeV). We find that the specific energy per incoming ion delivered in the nucleus and in the cytoplasm are rather similar for all the proton energy range analyzed.

  1. Fabrication of nanowires of Al-doped ZnO using nanoparticle assisted pulsed laser deposition (NAPLD) for device applications

    Energy Technology Data Exchange (ETDEWEB)

    Thanka Rajan, S. [ECMS Division, CSIR – Central Electrochemical Research Institute, Karaikudi 630 006 (India); Subramanian, B., E-mail: subramanianb3@gmail.com [ECMS Division, CSIR – Central Electrochemical Research Institute, Karaikudi 630 006 (India); Nanda Kumar, A.K.; Jayachandran, M. [ECMS Division, CSIR – Central Electrochemical Research Institute, Karaikudi 630 006 (India); Ramachandra Rao, M.S. [Department of Physics, Indian Institute of Technology Madras, Chennai 600 036 (India)

    2014-01-25

    Graphical abstract: -- Highlights: • Novel technique of NP assisted PLD was employed to obtain Al doped ZnO. • AZO nano wires with aspect ratios exceeding 20 were obtained at 500 sccm Ar gas pressure. • AZO films belong to the most stable wurtzite type. • Films show near band edge emission and defect related emission. -- Abstract: Aluminium doped zinc oxide (AZO) nanostructures have been successfully synthesized on sapphire substrates by using nanoparticle assisted pulsed laser deposition (NAPLD) in Ar atmosphere without using any catalyst. The growth of the AZO nanowires has been investigated by varying the argon flow rates. The coatings have been characterized by X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Atomic force microscopy (AFM), Diffuse Reflectance Spectroscopy (DRS), Laser Raman spectroscopy and Photoluminescence spectroscopy. The results of XRD indicate that the deposited films are crystalline ZnO with hexagonal wurtzite structure with (0 0 2) preferred orientation. FESEM images also clearly reveal the hexagonal structure and the formation of nanowires with aspect ratios between 15 and 20. The surface roughness value of 9.19 nm was observed from AFM analysis. The optical properties of the sample showed that under excitation with λ = 325 nm, an emission band was observed in UV and visible region. The characteristic Raman peaks were detected at 328, 380, 420, 430 cm{sup −1}.

  2. Plasma and Beam Production Experiments with HYBRIS, aMicrowave-assisted H- Ion

    Energy Technology Data Exchange (ETDEWEB)

    Keller, R. AUTHOR-Kwan, S.; Hahto, S.; Regis, M.; Wallig, J.

    2006-09-13

    A two-stage ion source concept had been presented a few years ago, consisting of a proven H- ion source and a 2.45-GHz Electron Cyclotron-Resonance (ECR) type ion source, here used as a plasma cathode. This paper describes the experimental development path pursued at Lawrence Berkeley National Laboratory, from the early concept to a working unit that produces plasma in both stages and creates a negative particle beam. Without cesiation applied to the second stage, the H{sup -} fraction of this beam is very low, yielding 75 micro-amperes of extracted ion beam current at best. The apparent limitations of this approach and envisaged improvements are discussed.

  3. Hyperthermal Pulsed-Laser Ablation Beams for Film Deposition and Surface Microstructural Engineering

    Energy Technology Data Exchange (ETDEWEB)

    Lowndes, D.H.

    1999-11-08

    This paper presents an overview of pulsed-laser ablation for film deposition and surface microstructure formation. By changing the ambient gas pressure from high vacuum to several Torr (several hundred Pa) and by selecting the pulsed-laser wavelength, the kinetic energy of ablated atoms/ions can be varied from several hundred eV down to {approximately}0.1 eV and films ranging from superhard to nanocrystalline may be deposited. Furthermore, cumulative (multi-pulse) irradiation of a semiconductor surface (e.g. silicon) in an oxidizing gas (0{sub 2}, SF{sub 6}) et atmospheric pressure can produce dense, self-organized arrays of high-aspect-ratio microcolumns or microcones. Thus, a wide range of materials synthesis and processing opportunities result from the hyperthermal flux and reactive growth conditions provided by pulsed-laser ablation.

  4. Performance properties of electro-spark deposited carbide-ceramic coatings modified by laser beam

    Science.gov (United States)

    Radek, Norbert; Bartkowiak, Konrad

    The work presented in this paper determines the influence of the laser treatment process on the properties of electrospark coatings. The properties after laser treatment were examined by microstructure analysis, microhardness, roughness and adhesion tests. The studies were conducted using WC-Co-Al2O3 electrodes produced by sintering nanostructural powders. The anti-wear coatings were first deposited by an EIL-8A apparatus on C45 carbon steel and then laser melted within various process parameters. In this case Nd:YAG laser (BLS 720 model) was applied. The electro-spark deposited coatings are very promising to improve abrasive wear resistance of tools and machine parts, which was indicated by tribological tests.

  5. Adherence of ion beam sputter deposited metal films on H-13 steel

    Science.gov (United States)

    Mirtich, M. J.

    1980-01-01

    An electron bombardment argon ion source sputter deposited 17 metals and metal oxides on H-13 steel. The films ranged 1 to 8 micrometers in thickness and their adherence was generally greater than the capacity of the measuring device; adherence quality depended on proper precleaning of the substrate before deposition. N2 or air was introduced for correct stoichiometry in metallic compounds. Au, Ag, MgO, and Ta5Si3 films 8 microns thick have bond strength equal to 1 micron coatings; the bond strength of pure metallic films up to 5 microns thick was greater than the epoxy to film bond (8000 psi). The results of exposures of coated material to temperatures up to 700 C are presented.

  6. Optical characteristics of nanocrystalline Al{sub x}Ga{sub 1−x}N thin films deposited by hollow cathode plasma-assisted atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Goldenberg, Eda, E-mail: goldenberg@unam.bilkent.edu.tr [UNAM – National Nanotechnology Research Center, Bilkent University, Ankara 06800 (Turkey); Ozgit-Akgun, Cagla; Biyikli, Necmi [Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey); Kemal Okyay, Ali [Department of Electrical and Electronics Engineering, Bilkent University, Ankara 06800 (Turkey)

    2014-05-15

    Gallium nitride (GaN), aluminum nitride (AlN), and Al{sub x}Ga{sub 1−x}N films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 °C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and Al{sub x}Ga{sub 1−x}N films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2 nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4 nm when the annealing duration increased from 30 min to 2 h (800 °C). For all films, the average optical transmission was ∼85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and Al{sub x}Ga{sub 1−x}N were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (λ = 550 nm) with the increased Al content x (0 ≤ x ≤ 1), while the extinction coefficients (k) were approximately zero in the VIS spectrum (>400 nm). Postdeposition annealing at 900 °C for 2 h considerably lowered the refractive index value of GaN films (2.33–1.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95 eV, and it decreased to 3.90 eV for films annealed at 800 °C for 30 min and 2 h. On the other hand, this value increased to 4.1 eV for GaN films annealed at 900 °C for 2 h. This might be caused by Ga{sub 2}O{sub 3} formation and following phase change. The optical bandgap value of as-deposited Al{sub x}Ga{sub 1−x}N films decreased from 5.75 to 5.25 eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not

  7. Aerosol-assisted chemical vapor deposition of tungsten oxide films and nanorods from oxo tungsten(VI) fluoroalkoxide precursors.

    Science.gov (United States)

    Kim, Hankook; Bonsu, Richard O; O'Donohue, Christopher; Korotkov, Roman Y; McElwee-White, Lisa; Anderson, Timothy J

    2015-02-04

    Aerosol-assisted chemical vapor deposition (AACVD) of WOx was demonstrated using the oxo tungsten(VI) fluoroalkoxide single-source precursors, WO[OCCH3(CF3)2]4 and WO[OC(CH3)2CF3]4. Substoichiometric amorphous tungsten oxide thin films were grown on indium tin oxide (ITO) substrates in nitrogen at low deposition temperature (100-250 °C). At growth temperatures above 300 °C, the W18O49 monoclinic crystalline phase was observed. The surface morphology and roughness, visible light transmittance, electrical conductivity, and work function of the tungsten oxide materials are reported. The solvent and carrier gas minimally affected surface morphology and composition at low deposition temperature; however, material crystallinity varied with solvent choice at higher temperatures. The work function of the tungsten oxide thin films grown between 150 and 250 °C was determined to be in the range 5.0 to 5.7 eV, according to ultraviolet photoelectron spectroscopy (UPS).

  8. Deposition of organic dyes for dye-sensitized solar cell by using matrix-assisted pulsed laser evaporation

    Directory of Open Access Journals (Sweden)

    Chih-Ping Yen

    2016-08-01

    Full Text Available The deposition of various distinct organic dyes, including ruthenium complex N3, melanin nanoparticle (MNP, and porphyrin-based donor-π-acceptor dye YD2-o-C8, by using matrix-assisted pulsed laser evaporation (MAPLE for application to dye-sensitized solar cell (DSSC is investigated systematically. It is found that the two covalently-bonded organic molecules, i.e., MNP and YD2-o-C8, can be transferred from the frozen target to the substrate with maintained molecular integrity. In contrast, N3 disintegrates in the process, presumably due to the lower bonding strength of metal complex compared to covalent bond. With the method, DSSC using YD2-o-C8 is fabricated, and an energy conversion efficiency of 1.47% is attained. The issue of the low penetration depth of dyes deposited by MAPLE and the possible resolution to it are studied. This work demonstrates that MAPLE could be an alternative way for deposition of organic dyes for DSSC.

  9. Deposition of organic dyes for dye-sensitized solar cell by using matrix-assisted pulsed laser evaporation

    Science.gov (United States)

    Yen, Chih-Ping; Yu, Pin-Feng; Wang, Jyhpyng; Lin, Jiunn-Yuan; Chen, Yen-Mu; Chen, Szu-yuan

    2016-08-01

    The deposition of various distinct organic dyes, including ruthenium complex N3, melanin nanoparticle (MNP), and porphyrin-based donor-π-acceptor dye YD2-o-C8, by using matrix-assisted pulsed laser evaporation (MAPLE) for application to dye-sensitized solar cell (DSSC) is investigated systematically. It is found that the two covalently-bonded organic molecules, i.e., MNP and YD2-o-C8, can be transferred from the frozen target to the substrate with maintained molecular integrity. In contrast, N3 disintegrates in the process, presumably due to the lower bonding strength of metal complex compared to covalent bond. With the method, DSSC using YD2-o-C8 is fabricated, and an energy conversion efficiency of 1.47% is attained. The issue of the low penetration depth of dyes deposited by MAPLE and the possible resolution to it are studied. This work demonstrates that MAPLE could be an alternative way for deposition of organic dyes for DSSC.

  10. The effect of oxygen flow rate on refractive index of aluminum oxide film deposited by electron beam evaporation technique

    Directory of Open Access Journals (Sweden)

    R Shakouri

    2016-02-01

    Full Text Available The effects of oxygen flow rate on refractive index of aluminum oxide film have been investigated. The Al2O3 films are deposited by electron beam on glass substrate at different oxygen flow rates. The substrate was heated to reach  and the temperature was constant during the thin film growth. The transmittance spectrum of samples was recorded in the wavelength 400-800 nm.  Then, using the maxima and minima of transmittance the refractive index and the extinction coefficient of samples were determined. It has been found that if we reduce the oxygen flow, while the evaporation rate is kept constant, the refractive index of Al2O3 films increases. On the other hand, reduced oxygen pressure causes the Al2O3 films to have some absorption.

  11. Methods for assisting recovery of damaged brain and spinal cord and treating various diseases using arrays of x-ray microplanar beams

    Energy Technology Data Exchange (ETDEWEB)

    Dilmanian, F. Avraham (Yaphank, NY); Anchel, David J. (Rocky Point, NY); Gaudette, Glenn (Holden, MA); Romanelli, Pantaleo (Monteroduni, IT); Hainfeld, James (Shoreham, NY)

    2010-06-29

    A method of assisting recovery of an injury site of the central nervous system (CNS) or treating a disease includes providing a therapeutic dose of X-ray radiation to a target volume through an array of parallel microplanar beams. The dose to treat CNS injury temporarily removes regeneration inhibitors from the irradiated site. Substantially unirradiated cells surviving between beams migrate to the in-beam portion and assist recovery. The dose may be staggered in fractions over sessions using angle-variable intersecting microbeam arrays (AVIMA). Additional doses are administered by varying the orientation of the beams. The method is enhanced by injecting stem cells into the injury site. One array or the AVIMA method is applied to ablate selected cells in a target volume associated with disease for palliative or curative effect. Atrial fibrillation is treated by irradiating the atrial wall to destroy myocardial cells while continuously rotating the subject.

  12. Internal transport barrier triggered by non-linear lower hybrid wave deposition under condition of beam-driven toroidal rotation

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Q. D., E-mail: qgao@swip.ac.cn [Southwestern Institute of Physics, Chengdu 610041 (China); Budny, R. V. [Princeton Plasma Physics Laboratory, Princeton University, Princeton, New Jersey 08543 (United States)

    2015-03-15

    By using gyro-Landau fluid transport model (GLF23), time-dependent integrated modeling is carried out using TRANSP to explore the dynamic process of internal transport barrier (ITB) formation in the neutral beam heating discharges. When the current profile is controlled by LHCD (lower hybrid current drive), with appropriate neutral beam injection, the nonlinear interplay between the transport determined gradients in the plasma temperature (T{sub i,e}) and toroidal velocity (V{sub ϕ}) and the E×B flow shear (including q-profile) produces transport bifurcations, generating spontaneously a stepwise growing ITB. In the discharge, the constraints imposed by the wave propagation condition causes interplay of the LH driven current distribution with the plasma configuration modification, which constitutes non-linearity in the LH wave deposition. The non-linear effects cause bifurcation in LHCD, generating two distinct quasi-stationary reversed magnetic shear configurations. The change of current profile during the transition period between the two quasi-stationary states results in increase of the E×B shearing flow arising from toroidal rotation. The turbulence transport suppression by sheared E×B flow during the ITB development is analysed, and the temporal evolution of some parameters characterized the plasma confinement is examined. Ample evidence shows that onset of the ITB development is correlated with the enhancement of E×B shearing rate caused by the bifurcation in LHCD. It is suggested that the ITB triggering is associated with the non-linear effects of the LH power deposition.

  13. Thermally induced formation of metastable nanocomposites in amorphous Cr-Zr-O thin films deposited using reactive ion beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Rafaja, David, E-mail: rafaja@ww.tu-freiberg.de [Institute of Materials Science, Freiberg University of Technology, D-09599 Freiberg (Germany); Wüstefeld, Christina [Institute of Materials Science, Freiberg University of Technology, D-09599 Freiberg (Germany); Abrasonis, Gintautas [Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden (Germany); Braeunig, Stefan [Institute of Materials Science, Freiberg University of Technology, D-09599 Freiberg (Germany); Baehtz, Carsten [Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden (Germany); Hanzig, Florian; Dopita, Milan [Institute of Materials Science, Freiberg University of Technology, D-09599 Freiberg (Germany); Krause, Matthias [Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden (Germany); Gemming, Sibylle [Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden (Germany); Institute of Physics, Technische Universität Chemnitz, D-09126 Chemnitz (Germany)

    2016-08-01

    Successive crystallization of amorphous Cr-Zr-O thin films, formation of the (Cr,Zr){sub 2}O{sub 3}/(Zr,Cr)O{sub 2} nanocomposites and the thermally induced changes in the hexagonal crystal structure of metastable (Cr,Zr){sub 2}O{sub 3} were investigated by means of in situ high-temperature synchrotron diffraction experiments up to 1100 °C. The thin films were deposited at room temperature by using reactive ion beam sputtering, and contained 3–15 at.% Zr. At low Zr concentrations, chromium-rich (Cr,Zr){sub 2}O{sub 3} crystallized first, while the crystallization of zirconium-rich (Zr,Cr)O{sub 2} was retarded. Increasing amount of zirconium shifted the onset of crystallization in both phases to higher temperatures. For 3 at.% of zirconium in amorphous Cr-Zr-O, (Cr,Zr){sub 2}O{sub 3} crystallized at 600 °C. At 8 at.% Zr in the films, the crystallization of (Cr,Zr){sub 2}O{sub 3} started at 700 °C. At 15 at.% Zr, the Cr-Zr-O films remained amorphous up to the annealing temperature of 1000 °C. Metastable hexagonal (Cr,Zr){sub 2}O{sub 3} accommodated up to ~ 3 at.% Zr. Excess of zirconium formed tetragonal zirconia, which was stabilized by chromium. - Highlights: • Amorphous Cr-Zr-O thin films were deposited using reactive ion beam sputtering. • After annealing in vacuum, metastable (Cr,Zr){sub 2}O{sub 3}/(Zr,Cr)O{sub 2} nanocomposites form. • The crystallization temperature depends strongly on the Zr concentration. • Metastable hexagonal (Cr,Zr){sub 2}O{sub 3} accommodates up to 3.2 at.% of zirconium. • Zirconium oxide crystallizes in tetragonal form, as it is stabilized by chromium.

  14. Resonant vibrational excitation of ethylene molecules in laser-assisted diamond deposition

    Science.gov (United States)

    Fan, L. S.; Zhou, Y. S.; Wang, M. X.; Gao, Y.; Liu, L.; Silvain, J. F.; Lu, Y. F.

    2014-07-01

    The influence of resonant vibrational excitation of ethylene molecules in combustion chemical vapor deposition of diamond was investigated. Resonant vibrational excitation of the CH2-wagging mode (a type c fundamental band, υ7, at 949.3 cm-1) in ethylene molecules was achieved by using a wavelength-tunable CO2 laser with a matching wavelength at 10.532 µm. By comparing to laser irradiation at off-resonance wavelengths, an on-resonance vibrational excitation is more efficient in energy coupling, increasing flame temperatures, accelerating the combustion reactions, and promoting diamond deposition. An enhanced rate of 5.7 was achieved in terms of the diamond growth rate with an improved diamond quality index at a high flame temperature under a resonant excitation of the CH2-wagging mode. This study demonstrates that a resonant vibrational excitation is an effective route for coupling energy into the gas phase reactions and promoting the diamond synthesis process.

  15. Surface hydrophobic modification of cellulose membranes by plasma-assisted deposition of hydrocarbon films

    OpenAIRE

    Mudtorlep Nisoa; Pikul Wanichapichart

    2010-01-01

    Surface modification by plasma polymerization is an efficient method to change the surface properties of a membrane. Desirable functionality such as hydrophobicity or hydrophilicity can be obtained, depending on plasma chemistry of gas precursors and discharge conditions. In this work, RF magnetron plasma is produced using acetylene and nitrogen as precursor gases. Variations of RF power, particle flux, deposited time and pressure of the precursor gases have been made to observe coating effec...

  16. Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

    Science.gov (United States)

    Andrade, E.; García, V. M.; Nair, P. K.; Nair, M. T. S.; Zavala, E. P.; Huerta, L.; Rocha, M. F.

    2000-03-01

    Analyses of Rutherford back scattered (RBS) 4He+-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin film by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400°C leads to the conversion of Cu xSe thin film to Cu 2Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results.

  17. Comb-assisted cavity ring-down spectroscopy of a buffer-gas-cooled molecular beam.

    Science.gov (United States)

    Santamaria, Luigi; Sarno, Valentina Di; Natale, Paolo De; Rosa, Maurizio De; Inguscio, Massimo; Mosca, Simona; Ricciardi, Iolanda; Calonico, Davide; Levi, Filippo; Maddaloni, Pasquale

    2016-06-22

    We demonstrate continuous-wave cavity ring-down spectroscopy of a partially hydrodynamic molecular beam emerging from a buffer-gas-cooling source. Specifically, the (ν1 + ν3) vibrational overtone band of acetylene (C2H2) around 1.5 μm is accessed using a narrow-linewidth diode laser stabilized against a GPS-disciplined rubidium clock via an optical frequency comb synthesizer. As an example, the absolute frequency of the R(1) component is measured with a fractional accuracy of ∼1 × 10(-9). Our approach represents the first step towards the extension of more sophisticated cavity-enhanced interrogation schemes, including saturated absorption cavity ring-down or two-photon excitation, to buffer-gas-cooled molecular beams.

  18. High-performance 6-inch EUV mask blanks produced under real production conditions by ion-beam sputter deposition

    Science.gov (United States)

    Becker, Hans W.; Sobel, Frank; Aschke, Lutz; Renno, Markus; Krieger, Juergen; Buttgereit, Ute; Hess, Guenter; Lenzen, Frank; Knapp, Konrad; Yulin, Sergey A.; Feigl, Torsten; Kuhlmann, Thomas; Kaiser, Norbert

    2002-12-01

    EUV mask blanks consist of two thin film systems deposited on low thermal expansion 6 inch substrates (LTEM). First there is the multilayer stack with around 100 alternating layers of elements with different optical properties which are topped by a capping layer. The absorber stack which consists of a buffer and a absorber layer is next. Here a minimum absorption of EUV light of 99 % is required. The stress in both layer systems should be as low as possible. The reduction of defects to an absolute minimum is one of the main challenges. The high-reflective Mo/Si multilayer coatings were designed for normal incidence reflectivity and successfully deposited on 6-inch LTEM substrates by ion-beam sputtering. X-ray scattering, transmission electron microscopy and atomic force microscopy were used for characterization of the multilayer interfaces and the surface morphology. The results are correlated to the measured normal incidence reflectivity using synchrotron radiation at the "Physikalisch- Technischen Bundesanstalt" (PTB) refelctometer at BESSY II, Berlin, Germany. A high resolution laser scanner was used to measure the particle distribution. First multilayer defect results are presented.

  19. Classical simulation of atomic beam focusing and deposition for atom lithography

    Institute of Scientific and Technical Information of China (English)

    Xianzhong Chen(陈献忠); Hanmin Yao(姚汉民); Xunan Chen(陈旭南)

    2004-01-01

    We start from the intensity distribution of a standing wave (SW) laser field and deduce the classical equation of atomic motion. The image distortion is analyzed using transfer function approach. Atomic flux density distribution as a function of propagation distance is calculated based on Monte-Carlo scheme and trajectory tracing method. Simulation results have shown that source imperfection, especially beam spread, plays an important role in broadening the feature width, and the focus depth of atom lens for real atomic source is longer than that for perfect source. The ideal focal plane can be easily determined by the variation of atomic density at the minimal potential of the laser field as a function of traveling distance.

  20. Thermal shock behavior of platinum aluminide bond coat/electron beam-physical vapor deposited thermal barrier coatings

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhenhua, E-mail: zhxuciac@163.com [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Dai, Jianwei [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Niu, Jing [Shenyang Liming Aero-engine (Group) Corporation Ltd., Institute of Metallurgical Technology, Technical Center, Shengyang 110043 (China); Li, Na; Huang, Guanghong; He, Limin [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China)

    2014-12-25

    Highlights: • TBCs of (Ni, Pt)Al bond coat with grit blasting process and YSZ ceramic coating. • Grain boundary ridges are the sites for spallation damage initiation in TBCs. • Ridges removed, cavities formation appeared and the damage initiation deteriorated. • Damage initiation and progression at interface lead to a buckling failure. - Abstract: Thermal barrier coating systems (TBCs) including of chemical vapor deposited (Ni, Pt)Al bond coat with grit blasting process and electron beam physical vapor deposited Y{sub 2}O{sub 3}-stabilized-ZrO{sub 2} (YSZ) ceramic coating were investigated. The phase structures, surface and cross-sectional morphologies, thermal shock behaviors and residual stresses of the coatings were studied in detail. Grain boundary ridges still remain on the surface of bond coat prior to the deposition of the ceramic coating, which are shown to be the major sites for spallation damage initiation in TBCs. When these ridges are mostly removed, they appear some of cavities formation and then the damage initiation mode is deteriorated. Damage initiation and progression occurs at the bond coat to thermally grown oxide (TGO) interface leading to a buckling failure behavior. A buckle failure once started may be arrested when it runs into a region of high bond coat to TGO interface toughness. Thus, complete failure requires further loss in toughness of the bond coat to TGO interface during cooling. The suppressed cavities formation, the removed ridges at the grain boundaries, the relative high TGO to bond coat interface toughness, the uniform growth behavior of TGO thickening and the lower of the residual stress are the primary factors for prolonging the lifetime of TBCs.

  1. Nanopatterning on fragile or 3D surfaces with sterol-based vapor-deposited electron beam resist

    Science.gov (United States)

    Legario, Ron R.; Kelkar, Prasad S.; Beauvais, Jacques; Lavallee, Eric; Drouin, Dominique; Cloutier, Melanie; Turcotte, David; Yang, Pan; Mun, Lau K.; Awad, Yousef; Lafrance, Pierre J.

    2004-05-01

    A novel and effective approach to nano-fabrication lithography is the vapour deposition of the negative tone electron beam resists QSR-5 and QSR-15 (Quantiscript"s sterol based resist) onto a substrate. Vapour deposition is especially conducive for patterning thin delicate membranes (e.g. advanced masks for X-ray lithography - XRL, and Low Energy Electron Proximity Projection Lithography - LEEPL), that are susceptible to breakage during the spin coating process. With the capability for depositing highly uniform thin layers (optical fibre with the goal of improving the coupling of diode laser emission into the fiber. This application clearly shows the capabilities of this process for producing nano-scale patterns on very small area surfaces that are completely unsuitable for spin-coating of the resist. A second demonstration of the resist's capabilities is the patterning of optical diffractive elements directly on the facet of a semiconductor laser. This opens the way to direct patterning on laser diode facets in order to control the emission profile from the device. It has also proven capabilities in the manufacture of delicate photo masks. In their natural state, QSR-5 and QSR-15 are solids at room temperature and are sterol based heterocyclic compounds, with unsaturated bonding capable of cross linking. On their own merit, QSR-5 and QSR-15 are capable of cross linking under electron beam exposure and are comparable in certain properties to conventional spin-coated resists such as PMMA. When cross linked, their heterocyclic structure gives it excellent selective resistance to solvent based developers (such as alcohols and ketones) for pattern formation. They have also been shown to be highly resistant to etching solutions, even when working with thin high resolution layers on the order of 30 nm. They are highly stable and have a relatively long shelf life, greater than one year. Compared to conventional resists utilizing complex, toxic, and expensive resin systems

  2. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kong, W., E-mail: wei.kong@duke.edu; Jiao, W. Y.; Kim, T. H.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Roberts, A. T. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Fournelle, J. [Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States); Losurdo, M. [CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari (Italy); Everitt, H. O. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2015-09-28

    Thin films of the wide bandgap quaternary semiconductor In{sub x}Al{sub y}Ga{sub (1−x−y)}N with low In (x = 0.01–0.05) and high Al composition (y = 0.40–0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280 nm–320 nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.

  3. Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by Oxygen-plasma-assisted Molecular Beam Epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Zhongqing; Kuchibhatla, Satyanarayana V N T; Saraf, Laxmikant V.; Marina, Olga A.; Wang, Chong M.; Engelhard, Mark H.; Shutthanandan, V.; Nachimuthu, Ponnusamy; Thevuthasan, Suntharampillai

    2008-03-11

    We have used oxygen-plasma-assisted molecular beam epitaxy (OPA-MBE) to grow highly oriented Ce1-xSmxO2-δ films on single crystal c-Al2O3. The samarium concentration, x, was varied in the range 1-33 atom%. It was observed that dominant (111) orientation in Ce1-xSmxO2-δ films can be maintained up to about 10 samarium atom% concentration. Films higher than 10 atom% Sm concentration started to show polycrystalline features. The highest conductivity of 0.04 S.cm-1, at 600 0C, was observed for films with ~ 5 atom% Sm concentration. A loss of orientation, triggering an enhanced grain boundary scattering, appears to be responsible for the decrease in conductivity at higher dopant concentrations.

  4. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zuo, Zheng; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States)

    2015-11-23

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.

  5. Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Brown, April [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

    2006-06-15

    The growth of GaN by plasma assisted molecular beam epitaxy on GaN template substrates (GaN on sapphire) is investigated with in-situ multi-channel spectroscopic ellipsometry. Growth is performed under various Ga/N flux ratios at growth temperatures in the range 710-780 C. The thermal roughening of the GaN template caused by decomposition of the surface is investigated through the temporal variation of the GaN pseudodielectric function over the temperature range of 650 C to 850 C. The structural, morphological, and optical properties are also discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Ahmadi, Elaheh; Koksaldi, Onur S.; Kaun, Stephen W.; Oshima, Yuichi; Short, Dane B.; Mishra, Umesh K.; Speck, James S.

    2017-04-01

    The Ge doping of β-Ga2O3(010) films was investigated using plasma-assisted molecular beam epitaxy as the growth method. The dependences of the amount of Ge incorporated on the substrate temperature, Ge-cell temperature, and growth regime were studied by secondary ion mass spectrometry. The electron concentration and mobility were investigated using Van der Pauw Hall patterns. Hall measurement confirmed that Ge acts as an n-dopant in β-Ga2O3(010) films. These results were compared with similar films doped by Sn. The Hall data showed an improved electron mobility for the same electron concentration when Ge is used instead of Sn as the dopant.

  7. Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    CAO Qiang; DENG Jiang-Xia; LIU Guo-Lei; CHEN Yan-Xue; YAN Shi-Shen

    2007-01-01

    High quality Co-doped ZnO thin films are grown on single crystalline Al2O3(0001) and ZnO(0001) substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450 ℃. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction (RHEED) and ex-situ high resolution x-ray diffraction (HRXRD). The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co2+ substituting Zn2+ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures TC above room temperature.

  8. Bias-assisted atomic force microscope nanolithography on NbS2 thin films grown by chemical vapor deposition

    Science.gov (United States)

    Bark, Hunyoung; Kwon, Sanghyuk; Lee, Changgu

    2016-12-01

    Niobium disulfide, one of the metallic transition metal dichalcogenides, has a high potential as an electrode material for electronic devices made of 2D materials. Here, we investigated the bias-assisted atomic force microscope nanolithography of NbS2 thin films synthesized by chemical vapor deposition. We analyzed the lithographed pattern using Raman spectroscopy, transmission electron microscopy and friction force microscopy. These analyses showed that lines having various widths and thicknesses could be generated using the lithography technique by simply varying the scan speed and applied voltage. These analyses also revealed that the NbS2 film transformed from a layered crystalline structure into an amorphous structure upon being lithographed. By generating four line segments forming a square and measuring I/V curves inside and outside of the square, the electrical properties of the lithographed material were characterized. These analyses indicate that NbS2 became hydrogenated and an insulator upon being lithographed.

  9. Numerical And Experimental Analysis Of Fracture Of Athrombogenic Coatings Deposited On Ventricular Assist Device In Micro-Shear Test

    Directory of Open Access Journals (Sweden)

    Kopernik M.

    2015-06-01

    Full Text Available The Polish left ventricular assist device (LVAD – RELIGA_EXT will be made of thermoplastic polycarbonate-urethane (Bionate II with deposited athrombogenic nano-coatings: gold (Au and titanium nitride (TiN. Referring to the physical model, the two-scale model of LVAD developed in the previous works in the authors’ finite element code is composed of a macro-model of blood chamber and a micro-model of wall: TiN, Au and Bionate II. The numerical analysis of stress and strain states confirmed the possibility of fracture based on localization of zones of the biggest values of triaxiality factor. The introduction of Au interlayer between TiN and polymer improved the toughness of the connection, and increased the compressive residual stress in the coating what resulted in reduction of stress and strain close to the boundary between substrate and coating.

  10. Monte Carlo simulation of the behaviour of electrons during electron-assisted chemical vapour deposition of diamond

    Institute of Scientific and Technical Information of China (English)

    董丽芳; 陈俊英; 董国义; 尚勇

    2002-01-01

    The behaviour of electrons during electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron energy distribution and velocity distribution are obtained over a wide range of reduced field E/N (the ratio of the electric field to gas molecule density) from 100 to 2000 in units of 1Td=10-17Vcm2.Their effects on the diamond growth are also discussed. Themain results obtained are as follows. (1) The velocity profile is asymmetric for the component parallel to the field.Ihe velocity distribution has a peak shift in the field direction. Most electrons possess non-zero velocity parallel to the substrate. (2) The number of atomic H is a function of E/N. (3) High-quality diamond can be obtained under the condition of E/N from 50 to 800Td due to sufficient atomic H and electron bombardment.

  11. Properties of La and Nb-modified PZT thin films grown by radio frequency assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Verardi, P. [CNR-Istituto di Acustica, Via del Fosso del Cavaliere 100, I-00133 Rome (Italy); Craciun, F. [CNR-Istituto dei Sistemi Complessi, Via del Fosso del Cavaliere 100, I-00133 Rome (Italy); Dinescu, M. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania)]. E-mail: dinescum@ifin.nipne.ro; Scarisoreanu, N. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania); Moldovan, A. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania); Purice, A. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania); Galassi, C. [CNR-ISTEC, Via Granarolo 64, I 48018 Faenza (Italy)

    2005-04-25

    Lead zirconate titanate ferroelectric thin films added with La and Nb has been grown by radio frequency assisted pulsed laser deposition on Pt/Si, starting from sintered targets. The dielectric properties were measured in a large frequency range and their dependence on the a.c. driving field amplitude has been investigated. A linear decreasing of the dielectric permittivity with frequency logarithm increasing has been evidenced. The most important factor for the driving field amplitude influence on the dielectric properties is the type of vacancies introduced by La and Nb substitutions, which indicates that the dynamics involved in a.c. field behavior is controlled by interaction mechanisms between ferroelectric domain or nanodomain walls and pinning (vacancies) centers.

  12. Properties of Erbium Doped Hydrogenated Amorphous Carbon Layers Fabricated by Sputtering and Plasma Assisted Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    V. Prajzler

    2008-01-01

    Full Text Available We report about properties of carbon layers doped with Er3+ ions fabricated by Plasma Assisted Chemical Vapor Deposition (PACVD and by sputtering on silicon or glass substrates. The structure of the samples was characterized by X-ray diffraction and their composition was determined by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The Absorbance spectrum was taken in the spectral range from 400 nm to 600 nm. Photoluminescence spectra were obtained using two types of Ar laser (λex=514.5 nm, lex=488 nm and also using a semiconductor laser (λex=980 nm. Samples fabricated by magnetron sputtering exhibited typical emission at 1530 nm when pumped at 514.5 nm. 

  13. Surface hydrophobic modification of cellulose membranes by plasma-assisted deposition of hydrocarbon films

    Directory of Open Access Journals (Sweden)

    Mudtorlep Nisoa

    2010-03-01

    Full Text Available Surface modification by plasma polymerization is an efficient method to change the surface properties of a membrane. Desirable functionality such as hydrophobicity or hydrophilicity can be obtained, depending on plasma chemistry of gas precursors and discharge conditions. In this work, RF magnetron plasma is produced using acetylene and nitrogen as precursor gases. Variations of RF power, particle flux, deposited time and pressure of the precursor gases have been made to observe coating effects on the cellulose membranes. When appropriated conditions are used, a thin brownish film of hydrocarbon was formed on the membrane, and the water contact angle increased from 35 to 130 degrees.

  14. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching

    Energy Technology Data Exchange (ETDEWEB)

    Anglin, Kevin, E-mail: kevin.r.anglin@gmail.com; Goodhue, William D. [Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 and Department of Physics and Applied Physics, University of Massachusetts Lowell, 1 University Ave., Lowell, Massachusetts 01854 (United States); Swint, Reuel B.; Porter, Jeanne [Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 (United States)

    2015-03-15

    A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.

  15. In-situ photo-assisted deposition of silver particles on hydrogel fibers for antibacterial applications

    Energy Technology Data Exchange (ETDEWEB)

    Raho, Riccardo [Department of Engineering for Innovation, University of Salento, Via per Monteroni, 73100 Lecce (Italy); CBN, Center for Biomolecular Nanotechnologies, Fondazione Istituto Italiano di Tecnologia, Via Barsanti, 73010 Arnesano, Lecce (Italy); Paladini, Federica; Lombardi, Fiorella Anna [Department of Engineering for Innovation, University of Salento, Via per Monteroni, 73100 Lecce (Italy); Boccarella, Sandro [Megatex S.p.A., Via Cima D' Aosta, 73040 Melissano, Lecce (Italy); Zunino, Benedetta [Università Cattolica del Sacro Cuore, Largo Francesco Vito 1, 00198 Roma (Italy); Pollini, Mauro, E-mail: mauro.pollini@unisalento.it [Department of Engineering for Innovation, University of Salento, Via per Monteroni, 73100 Lecce (Italy); Silvertech Ltd., Via per Monteroni, 73100 Lecce (Italy)

    2015-10-01

    Silver nanoparticles (AgNPs) have attracted intensive research interest and have been recently incorporated in polymers, medical devices, hydrogels and burn dressings to control the proliferation of microorganisms. In this study a novel silver antibacterial coating was deposited for the first time on hydrogel fibers through an in-situ photo-chemical reaction. Hydrogel blends obtained by mixing different percentages of silver-treated and untreated fibers were characterized by thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). Four different fluids, such as phosphate buffered saline (PBS), simulated body fluid (SBF), chemical simulated wound fluid (cSWF), and deionized water (DI water), were used for evaluating the swelling properties. The results obtained confirmed that the presence of silver did not affect the properties of the hydrogel. Moreover, the results obtained through inductively coupled plasma mass spectrometry (ICP-MS) demonstrated very low silver release values, thus indicating the perfect adhesion of the silver coating to the substrate. Good antibacterial capabilities were demonstrated by any hydrogel blend on Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) through agar diffusion tests and optical density readings. - Highlights: • An innovative nano-silver deposition technique was adopted on hydrogel fibers. • Antibacterial effects was verified by agar diffusion and optical density tests. • The swelling properties were investigated using 4 different fluids. • Hydrogel blends with different percentages of silver-treated fibers were compared.

  16. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  17. Self-excitation of microwave oscillations in plasma-assisted slow-wave oscillators by an electron beam with a movable focus.

    Science.gov (United States)

    Bliokh, Yu P; Nusinovich, G S; Shkvarunets, A G; Carmel, Y

    2004-10-01

    Plasma-assisted slow-wave oscillators (pasotrons) operate without external magnetic fields, which makes these devices quite compact and lightweight. Beam focusing in pasotrons is provided by ions, which appear in the device due to the impact ionization of a neutral gas by beam electrons. Typically, the ionization time is on the order of the rise time of the beam current. This means that, during the rise of the current, beam focusing by ions becomes stronger. Correspondingly, a beam of electrons, which was initially diverging radially due to the self-electric field, starts to be focused by ions, and this focus moves towards the gun as the ion density increases. This feature makes the self-excitation of electromagnetic (em) oscillations in pasotrons quite different from practically all other microwave sources where em oscillations are excited by a stationary electron beam. The process of self-excitation of em oscillations has been studied both theoretically and experimentally. It is shown that in pasotrons, during the beam current rise the amount of current entering the interaction space and the beam coupling to the em field vary. As a result, the self-excitation can proceed faster than in conventional microwave sources with similar operating parameters such as the operating frequency, cavity quality-factor and the beam current and voltage.

  18. In Situ Nanocalorimetric Investigations of Plasma Assisted Deposited Poly(ethylene oxide)-like Films by Specific Heat Spectroscopy.

    Science.gov (United States)

    Madkou, Sherif; Melnichu, Iurii; Choukourov, Andrei; Krakovsky, Ivan; Biederman, Hynek; Schönhals, Andreas

    2016-04-28

    In recent years, highly cross-linked plasma polymers have started to unveil their potential in numerous biomedical applications in thin-film form. However, conventional diagnostic methods often fail due to their diverse molecular dynamics conformations. Here, glassy dynamics and the melting transition of thin PEO-like plasma assisted deposited (ppPEO) films (thickness 100 nm) were in situ studied by a combination of specific heat spectroscopy, utilizing a pJ/K sensitive ac-calorimeter chip, and composition analytical techniques. Different cross-linking densities were obtained by different plasma powers during the deposition of the films. Glassy dynamics were observed for all values of the plasma power. It was found that the glassy dynamics slows down with increasing the plasma power. Moreover, the underlying relaxation time spectra broaden indicating that the molecular motions become more heterogeneous with increasing plasma power. In a second set of the experiment, the melting behavior of the ppPEO films was studied. The melting temperature of ppPEO was found to decrease with increasing plasma power. This was explained by a decrease of the order in the crystals due to formation of chemical defects during the plasma process.

  19. Crystalline magnetic carbon nanoparticle assisted photothermal delivery into cells using CW near-infrared laser beam

    Science.gov (United States)

    Gu, Ling; Koymen, Ali R.; Mohanty, Samarendra K.

    2014-05-01

    Efficient and targeted delivery of impermeable exogenous material such as small molecules, proteins, and plasmids into cells in culture as well as in vivo is of great importance for drug, vaccine and gene delivery for different therapeutic strategies. Though advent of optoporation by ultrafast laser microbeam has allowed spatial targeting in cells, the requirement of high peak power to create holes on the cell membrane is not practical and also challenging in vivo. Here, we report development and use of uniquely non-reactive crystalline magnetic carbon nanoparticles (CMCNPs) for photothermal delivery (PTD) of impermeable dyes and plasmids encoding light-sensitive proteins into cells using low power continuous wave near-infrared (NIR) laser beam. Further, we utilized the magnetic nature of these CMCNPs to localize them in desired region by external magnetic field, thus minimizing the required number of nanoparticles. We discovered that irradiation of the CMCNPs near the desired cell(s) with NIR laser beam leads to temperature rise that not only stretch the cell-membrane to ease delivery, it also creates fluid flow to allow mobilization of exogenous substances to the delivery. Due to significant absorption properties of the CMCNPs in the NIR therapeutic window, PTD under in vivo condition is highly possible.

  20. Microstructural, chemical and textural characterization of ZnO nanorods synthesized by aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Fuentes-Cobas, L.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C. [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico); Pérez-García, S.A. [Centro de Investigación en Materiales Avanzados, S.C., Unidad Monterrey, Apodaca, Nuevo León 66600 (Mexico); Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico)

    2014-12-15

    ZnO nanorods were synthesized by aerosol assisted chemical vapor deposition onto TiO{sub 2} covered borosilicate glass substrates. Deposition parameters were optimized and kept constant. Solely the effect of different nozzle velocities on the growth of ZnO nanorods was evaluated in order to develop a dense and uniform structure. The crystalline structure was characterized by conventional X-ray diffraction in grazing incidence and Bragg–Brentano configurations. In addition, two-dimensional grazing incidence synchrotron radiation diffraction was employed to determine the preferred growth direction of the nanorods. Morphology and growth characteristics analyzed by electron microscopy were correlated with diffraction outcomes. Chemical composition was established by X-ray photoelectron spectroscopy. X-ray diffraction results and X-ray photoelectron spectroscopy showed the presence of wurtzite ZnO and anatase TiO{sub 2} phases. Morphological changes noticed when the deposition velocity was lowered to the minimum, indicated the formation of relatively vertically oriented nanorods evenly distributed onto the TiO{sub 2} buffer film. By coupling two-dimensional X-ray diffraction and computational modeling with ANAELU it was proved that a successful texture determination was achieved and confirmed by scanning electron microscopy analysis. Texture analysis led to the conclusion of a preferred growth direction in [001] having a distribution width Ω = 20° ± 2°. - Highlights: • Uniform and pure single-crystal ZnO nanorods were obtained by AACVD technique. • Longitudinal and transversal axis parallel to the [001] and [110] directions, respectively. • Texture was determined by 2D synchrotron diffraction and electron microscopy analysis. • Nanorods have its [001] direction distributed close to the normal of the substrate. • Angular spread about the preferred orientation is 20° ± 2°.

  1. Polystyrene sphere monolayer assisted electrochemical deposition of ZnO nanorods with controlable surface density

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez, D., E-mail: daniel.ramirez@ucv.c [Laboratorio de Electroquimica, Pontificia Universidad Catolica de Valparaiso, Valparaiso (Chile); Gomez, H. [Laboratorio de Electroquimica, Pontificia Universidad Catolica de Valparaiso, Valparaiso (Chile); Lincot, D. [Institute de Recherche et Developpement sur l' Energie Photovoltaique-IRDEP, 6 Quai Watier 78401, Chatou Cedex (France)

    2010-02-15

    In this paper we report the zinc oxide nanorods (ZnO NRs) growth by electrochemical deposition onto polycrystalline gold electrodes modified with assemblies of polystyrene sphere monolayers (PSSMs). Growth occurs through the interstitial spaces between the hexagonally close packed spheres. ZnO NRs nucleate in the region where three adjacent spheres leave a space, being able to grow and projected over the PSSMs. The nanorod surface density (N{sub NR}) shows a linear dependence with respect to a PS sphere diameter selected. XRD analysis shows these ZnO NRs are highly oriented along the (0 0 2) plane (c-axis). This open the possibility to have electronic devices with mechanically supported nanometric materials.

  2. High-speed laser-assisted cutting of strong transparent materials using picosecond Bessel beams

    Science.gov (United States)

    Bhuyan, M. K.; Jedrkiewicz, O.; Sabonis, V.; Mikutis, M.; Recchia, S.; Aprea, A.; Bollani, M.; Trapani, P. Di

    2015-08-01

    We report single-pass cutting of strong transparent glass materials of 700 μm thickness with a speed up to 270 mm/s using single-shot nanostructuring technique exploiting picosecond, zero-order Bessel beams at laser wavelength of 1030 nm. Particularly, we present results of a systematic study of cutting of tempered glass which has high resistance to thermal and mechanical shocks due to the inhomogeneous material properties along its thickness, and homogeneous glass that identify a unique focusing geometry and a finite pitch dependency, for which cutting with high quality and high reproducibility can be achieved. These results represent a significant advancement in the field of high-speed cutting of technologically important transparent materials.

  3. Flux pinning properties of MgB{sub 2} thin films on Al tape substrates deposited by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Yonekura, K., E-mail: kenji@st.cs.kumamoto-u.ac.jp [Department of Computer Science and Electrical Engineering, Kumamoto University, 2-39-1, Kurokami, Kumamoto 860-8555 (Japan); Fujiyoshi, T.; Sueyoshi, T. [Department of Computer Science and Electrical Engineering, Kumamoto University, 2-39-1, Kurokami, Kumamoto 860-8555 (Japan); Doi, T.; Nishikawa, T. [Department of Electrical and Electronics Engineering, Kagoshima University, 1-21-40, Koorimoto, Kagoshima 890-0065 (Japan)

    2011-11-15

    MgB{sub 2} thin films were deposited on Al tape substrates by EBE. The MgB{sub 2} thin films on Al tapes show much higher J{sub c} values compared to those of MgB{sub 2} wires fabricated by PIT method. The MgB{sub 2} thin films on Al tapes have c-axis correlated pinning centers. The scaling analysis of macroscopic pinning force indicates that a main pinning center is grain boundary. Flux pinning properties have been investigated in two kinds of MgB{sub 2} thin films deposited on Al tapes by electron beam evaporation: One is a stoichiometric composition and the other is a slightly B-rich composition. The values of critical current density J{sub c} in both MgB{sub 2} thin films on Al tape substrates at 10 K in the magnetic field parallel to the c-axis are higher than those in MgB{sub 2} thin films on Si and Al{sub 2}O{sub 3} substrates prepared by the same method. Both the MgB{sub 2} thin films on Al tapes show the large peaks for a magnetic field, B//c in the field-angular dependence of J{sub c}. This result indicates that the MgB{sub 2} thin films have the c-axis correlated pinning centers. Scaling analysis in the reduced macroscopic pinning force density versus the reduced magnetic field at 20 K implies that a main pinning center in both the MgB{sub 2} thin films is grain boundaries. In addition, it was suggested that a nonstoichiometric MgB{sub 2} thin film has additional pinning centers which act effectively in a high magnetic field.

  4. Plasma assisted metal-organic chemical vapor deposition of hard chromium nitride thin film coatings using chromium(III) acetylacetonate as the precursor

    Energy Technology Data Exchange (ETDEWEB)

    Dasgupta, Arup; Kuppusami, P.; Lawrence, Falix; Raghunathan, V.S.; Antony Premkumar, P.; Nagaraja, K.S

    2004-06-15

    A new technique has been developed for depositing hard nanocrystalline chromium nitride (CrN) thin films on metallic and ceramic substrates using plasma assisted metal-organic chemical vapor deposition (PAMOCVD) technique. In this low temperature and environment-friendly process, a volatile mixture of chromium(III) acetylacetonate and either ammonium iodide or ammonium bifluoride were used as precursors. Nitrogen and hydrogen have been used as the gas precursors. By optimizing the processing conditions, a maximum deposition rate of {approx}0.9 {mu}m/h was obtained. A comprehensive characterization of the CrN films was carried out using X-ray diffraction (XRD), microhardness, and microscopy. The microstructure of the CrN films deposited on well-polished stainless steel (SS) showed globular particles, while a relatively smooth surface morphology was observed for coatings deposited on polished yittria-stabilized zirconia (YSZ)

  5. In-situ photo-assisted deposition of silver particles on hydrogel fibers for antibacterial applications.

    Science.gov (United States)

    Raho, Riccardo; Paladini, Federica; Lombardi, Fiorella Anna; Boccarella, Sandro; Zunino, Benedetta; Pollini, Mauro

    2015-10-01

    Silver nanoparticles (AgNPs) have attracted intensive research interest and have been recently incorporated in polymers, medical devices, hydrogels and burn dressings to control the proliferation of microorganisms. In this study a novel silver antibacterial coating was deposited for the first time on hydrogel fibers through an in-situ photo-chemical reaction. Hydrogel blends obtained by mixing different percentages of silver-treated and untreated fibers were characterized by thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). Four different fluids, such as phosphate buffered saline (PBS), simulated body fluid (SBF), chemical simulated wound fluid (cSWF), and deionized water (DI water), were used for evaluating the swelling properties. The results obtained confirmed that the presence of silver did not affect the properties of the hydrogel. Moreover, the results obtained through inductively coupled plasma mass spectrometry (ICP-MS) demonstrated very low silver release values, thus indicating the perfect adhesion of the silver coating to the substrate. Good antibacterial capabilities were demonstrated by any hydrogel blend on Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) through agar diffusion tests and optical density readings.

  6. Deposition by plasma-assisted laser ablation and maskless patterning of YBa[sub 2]Cu[sub 3]O[sub 7-x] superconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tejedor, P. (Centro Nacional de Microelectronica, CSIC, Madrid (Spain)); Cagigal, M. (Dept. de Fisica de Materiales, Univ. Complutense, Madrid (Spain)); Vicent, J.L. (Dept. de Fisica de Materiales, Univ. Complutense, Madrid (Spain)); Briones, F. (Centro Nacional de Microelectronica, CSIC, Madrid (Spain))

    1994-04-01

    YBa[sub 2]Cu[sub 3]O[sub 7-x] superconducting thin films were deposited in situ by plasma-assisted laser ablation onto polycrystalline yttria-stabilized-zirconia (YSZ) substrates at 700 C in a low pressure (200-400 mTorr) O[sub 2] discharge (-300 V). The laser operated at 5-50 Hz repetition rate and was focused onto a superconducting target with a typical energy density of 2.5-4 J cm[sup -2]. An in situ annealing step in 1 Torr O[sub 2] atmosphere at 425 C for 1-2 h was followed by slow cooling of the films to room temperature. The YBa[sub 2]Cu[sub 3]O[sub 7-x] films grew preferentially oriented with the c-axis normal to the substrate surface. They exhibited metallic behaviour in the normal state and superconducting transitions with typical onset of 91 K and zero resistance between 82 and 87 K. The transport critical current densities J[sub c] were 10[sup 2] A cm[sup -2] for 1 [mu]m thick films and two orders of magnitude higher, J[sub c] = 3 x 10[sup 4] A cm[sup -2], for 0.08 [mu]m thick films. Maskless patterning was achieved by utilizing the ArF laser beam to induce etching selectivity of the superconducting thin films. For this purpose, the central part of the beam was apertured by a slit and focused onto the sample by means of a 15 x Schwarzschild microscope objective to give an irradiated area on the sample of approximately 10 x 150 [mu]m[sup 2]. The laser energy density on the sample was typically 10[sup 3] J cm[sup -2], while the repetition rate was varied between 10 and 20 Hz. Microbridges of different geometries with a maximum resolution of 10 [mu]m and high edge definition were obtained at 20 [mu]m s[sup -1] scan rate using this technique. (orig.)

  7. A new application of photocatalysts: synthesis of nano-sized metal and alloy catalysts by a photo-assisted deposition method.

    Science.gov (United States)

    Mori, Kohsuke; Araki, Takashi; Takasaki, Tomoya; Shironita, Sayoko; Yamashita, Hiromi

    2009-05-01

    Supported Pd catalysts were synthesized using various semiconductor materials by a photo-assisted deposition method under UV-light irradiation. The Pd precursor was deposited and partially reduced by the direct interaction with the photo-excited state of the semiconductor materials, and subsequently transformed into metal particles by H(2) reduction. CO adsorption and Pd K-edge XAFS measurements demonstrated that the mean diameter of the deposited Pd particles can be controlled by the type of employed semiconductor materials. The catalytic activities in the direct synthesis of hydrogen peroxide (H(2)O(2)) using H(2) and O(2) gases under atmospheric pressure were strongly dependent on the type of supports. Here, the use of TiO(2) comprising a mixed phase of anatase and rutile was the most efficient based on the amount of Pd. The photo-assisted deposition also provides a simple and straightforward method to synthesize PdAu alloy nanoparticles. For the structural model of PdAu nanoparticles, we suggest that most of the Au atoms are preferentially located in the core region, whereas the Pd atoms are preferentially located in the shell region. The PdAu/TiO(2) catalysts prepared by the photo-assisted deposition method were shown to perform significantly better than the pure Pd/TiO(2) catalysts.

  8. Decreased bacterial growth on titanium nanoscale topographies created by ion beam assisted evaporation

    Science.gov (United States)

    Stolzoff, Michelle; Burns, Jason E; Aslani, Arash; Tobin, Eric J; Nguyen, Congtin; De La Torre, Nicholas; Golshan, Negar H; Ziemer, Katherine S; Webster, Thomas J

    2017-01-01

    Titanium is one of the most widely used materials for orthopedic implants, yet it has exhibited significant complications in the short and long term, largely resulting from poor cell–material interactions. Among these many modes of failure, bacterial infection at the site of implantation has become a greater concern with the rise of antibiotic-resistant bacteria. Nanostructured surfaces have been found to prevent bacterial colonization on many surfaces, including nanotextured titanium. In many cases, specific nanoscale roughness values and resulting surface energies have been considered to be “bactericidal”; here, we explore the use of ion beam evaporation as a novel technique to create nanoscale topographical features that can reduce bacterial density. Specifically, we investigated the relationship between the roughness and titanium nanofeature shapes and sizes, in which smaller, more regularly spaced nanofeatures (specifically 40–50 nm tall peaks spaced ~0.25 μm apart) were found to have more effect than surfaces with high roughness values alone. PMID:28223804

  9. Decreased bacterial growth on titanium nanoscale topographies created by ion beam assisted evaporation

    Directory of Open Access Journals (Sweden)

    Stolzoff M

    2017-02-01

    Full Text Available Michelle Stolzoff,1 Jason E Burns,2 Arash Aslani,2 Eric J Tobin,2 Congtin Nguyen,1 Nicholas De La Torre,3 Negar H Golshan,3 Katherine S Ziemer,3 Thomas J Webster1,3,4 1Department of Bioengineering, Northeastern University, Boston, 2N2 Biomedical, Bedford, MA, 3Department of Chemical Engineering, Northeastern University, Boston, MA, USA; 4Center of Excellence for Advanced Materials Research, University of King Abdulaziz, Jeddah, Saudi Arabia Abstract: Titanium is one of the most widely used materials for orthopedic implants, yet it has exhibited significant complications in the short and long term, largely resulting from poor cell–material interactions. Among these many modes of failure, bacterial infection at the site of implantation has become a greater concern with the rise of antibiotic-resistant bacteria. Nanostructured surfaces have been found to prevent bacterial colonization on many surfaces, including nanotextured titanium. In many cases, specific nanoscale roughness values and resulting surface energies have been considered to be “bactericidal”; here, we explore the use of ion beam evaporation as a novel technique to create nanoscale topographical features that can reduce bacterial density. Specifically, we investigated the relationship between the roughness and titanium nanofeature shapes and sizes, in which smaller, more regularly spaced nanofeatures (specifically 40–50 nm tall peaks spaced ~0.25 µm apart were found to have more effect than surfaces with high roughness values alone. Keywords: titanium, nanostructures, bacteria, bone ingrowth, surface roughness, IBAD 

  10. Reactive Ar ion beam sputter deposition of TiO2 films: Influence of process parameters on film properties

    Science.gov (United States)

    Bundesmann, C.; Lautenschläger, T.; Thelander, E.; Spemann, D.

    2017-03-01

    Several sets of TiO2 films were grown by Ar ion beam sputter deposition under systematic variation of ion energy and geometrical parameters (ion incidence angle and polar emission angle). The films were characterized concerning thickness, growth rate, structural properties, composition, mass density, and optical properties. The film thicknesses show a cosine-like angular distribution, and the growth rates were found to increase with increasing ion incidence angle and ion energy. All films are amorphous and stoichiometric, but can contain a considerable amount of backscattered primary particles. The atomic fraction of Ar particles decreases systematically with increasing scattering angle, independent from ion energy and ion incidence angle. Mass density and index of refraction show similar systematic variations with ion energy and geometrical parameters. The film properties are mainly influenced by the scattering geometry, and only slightly by ion energy and ion incidence angle. The variations in the film properties are tentatively assigned to changes in the angular and energy distribution of the sputtered target particles and back-scattered primary particles.

  11. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    Science.gov (United States)

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  12. Comparison of TiO2 and ZrO2 Films Deposited by Electron-Beam Evaporation and by Sol-Gel Process

    Institute of Scientific and Technical Information of China (English)

    YAO Jian-Ke; LI Hai-Yuan; FAN Zheng-Xiu; TANG Yong-Xing; JIN Yun-Xia; ZHAO Yuan-An; HE Hong-Bo; SHAO Jian-Da

    2007-01-01

    TiO2 and ZrO2 films are deposited by electron-beam (EB) evaporation and by sol-gel process. The film properties are characterized by visible and Fourier-transform infrared spectrometry, x-ray diffraction analysis, surface roughness measure, absorption and laser-induced damage threshold (LIDT) test. It is found that the sol-gel films have lower refractive index, packing density and roughness than EB deposited films due to their amorphous structure and high OH group concentration in the film. The high LIDT of sol-gel films is mainly due to their amorphous and porous structure, and low absorption. LIDT of EB deposited film is considerably affected by defects in the film, and LIDT of sol-gel deposited film is mainly effected by residual organic impurities and solvent trapped in the film.

  13. Shadow-casted ultrathin surface coatings of titanium and titanium/silicon oxide sol particles via ultrasound-assisted deposition.

    Science.gov (United States)

    Karahan, H Enis; Birer, Özgür; Karakuş, Kerem; Yıldırım, Cansu

    2016-07-01

    Ultrasound-assisted deposition (USAD) of sol nanoparticles enables the formation of uniform and inherently stable thin films. However, the technique still suffers in coating hard substrates and the use of fast-reacting sol-gel precursors still remains challenging. Here, we report on the deposition of ultrathin titanium and titanium/silicon hybrid oxide coatings using hydroxylated silicon wafers as a model hard substrate. We use acetic acid as the catalyst which also suppresses the reactivity of titanium tetraisopropoxide while increasing the reactivity of tetraethyl orthosilicate through chemical modifications. Taking the advantage of this peculiar behavior, we successfully prepared titanium and titanium/silicon hybrid oxide coatings by USAD. Varying the amount of acetic acid in the reaction media, we managed to modulate thickness and surface roughness of the coatings in nanoscale. Field-emission scanning electron microscopy and atomic force microscopy studies showed the formation of conformal coatings having nanoroughness. Quantitative chemical state maps obtained by x-ray photoelectron spectroscopy (XPS) suggested the formation of ultrathin (coatings and thickness measurements by rotating analyzer ellipsometry supported this observation. For the first time, XPS chemical maps revealed the transport effect of ultrasonic waves since coatings were directly cast on rectangular substrates as circular shadows of the horn with clear thickness gradient from the center to the edges. In addition to the progress made in coating hard substrates, employing fast-reacting precursors and achieving hybrid coatings; this report provides the first visual evidence on previously suggested "acceleration and smashing" mechanism as the main driving force of USAD.

  14. The role of phase separation for self-organized surface pattern formation by ion beam erosion and metal atom co-deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hofsaess, H.; Zhang, K.; Pape, A.; Bobes, O.; Broetzmann, M. [Georg-August University Goettingen, II. Institute of Physics, Goettingen (Germany)

    2013-05-15

    We investigate the ripple pattern formation on Si surfaces at room temperature during normal incidence ion beam erosion under simultaneous deposition of different metallic co-deposited surfactant atoms. The co-deposition of small amounts of metallic atoms, in particular Fe and Mo, is known to have a tremendous impact on the evolution of nanoscale surface patterns on Si. In previous work on ion erosion of Si during co-deposition of Fe atoms, we proposed that chemical interactions between Fe and Si atoms of the steady-state mixed Fe{sub x} Si surface layer formed during ion beam erosion is a dominant driving force for self-organized pattern formation. In particular, we provided experimental evidence for the formation of amorphous iron disilicide. To confirm and generalize such chemical effects on the pattern formation, in particular the tendency for phase separation, we have now irradiated Si surfaces with normal incidence 5 keV Xe ions under simultaneous gracing incidence co-deposition of Fe, Ni, Cu, Mo, W, Pt, and Au surfactant atoms. The selected metals in the two groups (Fe, Ni, Cu) and (W, Pt, Au) are very similar regarding their collision cascade behavior, but strongly differ regarding their tendency to silicide formation. We find pronounced ripple pattern formation only for those co deposited metals (Fe, Mo, Ni, W, and Pt), which are prone to the formation of mono and disilicides. In contrast, for Cu and Au co-deposition the surface remains very flat, even after irradiation at high ion fluence. Because of the very different behavior of Cu compared to Fe, Ni and Au compared to W, Pt, phase separation toward amorphous metal silicide phases is seen as the relevant process for the pattern formation on Si in the case of Fe, Mo, Ni, W, and Pt co-deposition. (orig.)

  15. Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

    Science.gov (United States)

    Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

    1988-01-01

    Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

  16. Low-temperature synthesis of diamond films by photoemission-assisted plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kawata, Mayuri, E-mail: kawata@mail.tagen.tohoku.ac.jp; Ojiro, Yoshihiro; Ogawa, Shuichi; Takakuwa, Yuji [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Masuzawa, Tomoaki; Okano, Ken [International Christian University, 3-10-2 Osawa, Mitaka 181-8585 (Japan)

    2014-03-15

    Photoemission-assisted plasma-enhanced chemical vapor deposition (PA-PECVD), a process in which photoelectrons emitted from a substrate irradiated with ultraviolet light are utilized as a trigger for DC discharge, was investigated in this study; specifically, the DC discharge characteristics of PA-PECVD were examined for an Si substrate deposited in advance through hot-filament chemical vapor deposition with a nitrogen-doped diamond layer of thickness ∼1 μm. Using a commercially available Xe excimer lamp (hν = 7.2 eV) to illuminate the diamond surface with and without hydrogen termination, the photocurrents were found to be 3.17 × 10{sup 12} and 2.11 × 10{sup 11} electrons/cm{sup 2}/s, respectively. The 15-fold increase in photocurrent was ascribed to negative electron affinity (NEA) caused by hydrogen termination on the diamond surfaces. The DC discharge characteristics revealed that a transition bias voltage from a Townsend-to-glow discharge was considerably decreased because of NEA (from 490 to 373 V for H{sub 2} gas and from 330 to 200 V for Ar gas), enabling a reduction in electric power consumption needed to synthesize diamond films through PA-PECVD. In fact, the authors have succeeded in growing high-quality diamond films of area 2.0 cm{sup 2} at 540 °C with a discharge power of only 1.8 W, plasma voltage of 156.4 V, and discharge current of 11.7 mA under the glow discharge of CH{sub 4}/H{sub 2}/Ar mixed gases. In addition to having only negligible amounts of graphite and amorphous carbon, the diamond films exhibit a relatively high diamond growth rate of 0.5 μm/h at temperatures as low as 540 °C, which is attributed to Ar{sup +} ions impinging on the diamond surface, and causing the removal of hydrogen atoms from the surface through sputtering. This process leads to enhanced CH{sub x} radical adsorption, because the sample was applied with a negative potential to accelerate photoelectrons in PA-PECVD.

  17. Tungsten Doped TiO2 with Enhanced Photocatalytic and Optoelectrical Properties via Aerosol Assisted Chemical Vapor Deposition

    Science.gov (United States)

    Sathasivam, Sanjayan; Bhachu, Davinder S.; Lu, Yao; Chadwick, Nicholas; Althabaiti, Shaeel A.; Alyoubi, Abdulrahman O.; Basahel, Sulaiman N.; Carmalt, Claire J.; Parkin, Ivan P.

    2015-06-01

    Tungsten doped titanium dioxide films with both transparent conducting oxide (TCO) and photocatalytic properties were produced via aerosol-assisted chemical vapor deposition of titanium ethoxide and dopant concentrations of tungsten ethoxide at 500 °C from a toluene solution. The films were anatase TiO2, with good n-type electrical conductivities as determined via Hall effect measurements. The film doped with 2.25 at.% W showed the lowest resistivity at 0.034 Ω.cm and respectable charge carrier mobility (14.9 cm3/V.s) and concentration (×1019 cm-3). XPS indicated the presence of both W6+ and W4+ in the TiO2 matrix, with the substitutional doping of W4+ inducing an expansion of the anatase unit cell as determined by XRD. The films also showed good photocatalytic activity under UV-light illumination, with degradation of resazurin redox dye at a higher rate than with undoped TiO2.

  18. High-angle tilt boundary graphene domain recrystallized from mobile hot-wire-assisted chemical vapor deposition system.

    Science.gov (United States)

    Lee, Jinsup; Baek, Jinwook; Ryu, Gyeong Hee; Lee, Mi Jin; Oh, Seran; Hong, Seul Ki; Kim, Bo-Hyun; Lee, Seok-Hee; Cho, Byung Jin; Lee, Zonghoon; Jeon, Seokwoo

    2014-08-13

    Crystallization of materials has attracted research interest for a long time, and its mechanisms in three-dimensional materials have been well studied. However, crystallization of two-dimensional (2D) materials is yet to be challenged. Clarifying the dynamics underlying growth of 2D materials will provide the insight for the potential route to synthesize large and highly crystallized 2D domains with low defects. Here, we present the growth dynamics and recrystallization of 2D material graphene under a mobile hot-wire assisted chemical vapor deposition (MHW-CVD) system. Under local but sequential heating by MHW-CVD system, the initial nucleation of nanocrystalline graphenes, which was not extended into the growth stage due to the insufficient thermal energy, took a recrystallization and converted into a grand single crystal domain. During this process, the stitching-like healing of graphene was also observed. The local but sequential endowing thermal energy to nanocrystalline graphenes enabled us to simultaneously reveal the recrystallization and healing dynamics in graphene growth, which suggests an alternative route to synthesize a highly crystalline and large domain size graphene. Also, this recrystallization and healing of 2D nanocrystalline graphenes offers an interesting insight on the growth mechanism of 2D materials.

  19. Electrochemically assisted deposition of sol-gel bio-composite with co-immobilized dehydrogenase and diaphorase

    Energy Technology Data Exchange (ETDEWEB)

    Wang Zhijie [LCPME, UMR 7564, CNRS-Nancy University, 405, rue de Vandoeuvre, 54600 Villers-les-Nancy (France); Etienne, Mathieu, E-mail: mathieu.etienne@lcpme.cnrs-nancy.fr [LCPME, UMR 7564, CNRS-Nancy University, 405, rue de Vandoeuvre, 54600 Villers-les-Nancy (France); Kohring, Gert-Wieland [Mikrobiologie, Universitaet des Saarlandes, Campus, Geb. A1.5, D-66123 Saarbruecken (Germany); Bon-Saint-Come, Yemima; Kuhn, Alexander [Universite Bordeaux, ISM, ENSCPB, 16 avenue Pey Berland, 33607 Pessac (France); Walcarius, Alain [LCPME, UMR 7564, CNRS-Nancy University, 405, rue de Vandoeuvre, 54600 Villers-les-Nancy (France)

    2011-10-30

    We report here that the electrochemically assisted deposition (EAD) of silica thin films can be a good strategy to co-encapsulate D-sorbitol dehydrogenase (DSDH) and diaphorase in an active form. This is achieved via the electrolysis of a hydrolyzed sol containing the biomolecules to initiate the poly-condensation of silica precursors upon electrochemically induced pH increase at the electrode/solution interface. DSDH was found to be very sensitive to the silica gel environment and the addition of a positively-charged polyelectrolyte was necessary to ensure effective operational behavior of the biomolecules. The composition of the sol and the conditions for electrolysis have been optimized with respect to the intensity of the electrochemical response to D-sorbitol oxidation. The K{sub m} of DSDH in the electrodeposited film was in the range of 3 mM, slightly better than the value determined biochemically in solution (6.5 mM). The co-immobilization of DSDH and diaphorase in this way led on the one hand to the possible reduction of NAD{sup +} to NADH (simultaneously to D-sorbitol oxidation) and on the other hand to the safe re-oxidation of the co-factor using a mediator (ferrocenedimethanol) as electron relay. The bioelectrocatalytic response looks promising for electro-enzymatic applications. To support this idea, the EAD of sol-gel bio-composite has been extended to macroporous electrodes displaying a much bigger electroactive surface area.

  20. Gold-Coated Nanoelectrospray Emitters Fabricated by Gravity-Assisted Etching Self-Termination and Electroless Deposition.

    Science.gov (United States)

    Zhu, Xudong; Liang, Yu; Weng, Yejing; Chen, Yuanbo; Jiang, Hao; Zhang, Lihua; Liang, Zhen; Zhang, Yukui

    2016-12-06

    To improve the stability and sensitivity of nanoelectrospray for liquid chromatography-mass spectroscopy (LC-MS) analysis, we present a new method to fabricate gold-coated emitters. Via gravity-assisted etching self-termination, the emitter with a tapered outer surface and a straight inner surface is prepared with good reproducibility, without the need of fluid introduced to protect internal surface during etching. Followed by electroless deposition, the emitter is further coated with gold film homogeneously, by which the relative standard deviation (RSD) value of total ion current in 160 h is <5%, showing good stability. Compared to that obtained by a commercial emitter, the identified protein number from 2 μg HeLa cell digests is increased over 10%, contributed by the stable electrospray and improved signal intensity of peptides. Furthermore, the integrated gold-coated emitter is prepared at the end of the ultranarrow-bore packed column (inner diameter of 25 μm), and 218 proteins are identified from 2 ng HeLa cell digests. All of these results demonstrate the great promise of such emitters for use in ultrasensitive proteome analysis.

  1. Electron beam assisted synthesis of silver nanoparticle in chitosan stabilizer: Preparation, stability and inhibition of building fungi studies

    Science.gov (United States)

    Jannoo, Kanokwan; Teerapatsakul, Churapa; Punyanut, Adisak; Pasanphan, Wanvimol

    2015-07-01

    Silver nanoparticles (AgNPs) in chitosan (CS) stabilizer were successfully synthesized using electron beam irradiation. The effects of irradiation dose, molecular weight (MW) of CS stabilizer, concentration of AgNO3 precursor and addition of tert-butanol on AgNPs production were studied. The stability of the AgNPs under different temperatures and storage times were also investigated. The AgNPs formation in CS was observed using UV-vis, FT-IR and XRD. The characteristic surface plasmon resonance (SPR) of the obtained AgNPs was around 418 nm. The CS stabilizer and its MW, AgNO3 precursor and irradiation doses are important parameters for the synthesis of AgNPs. The optimum addition of 20% v/v tert-butanol could assist the formation of AgNPs. The AgNPs in CS stabilizer were stable over a period of one year when the samples were kept at 5 °C. The AgNPs observed from TEM images were spherical with an average particle size in the range of 5-20 nm depending on the irradiation doses. The AgNPs in CS solution effectively inhibited the growth of several fungi, i.e., Curvularia lunata, Trichoderma sp., Penicillium sp. and Aspergillus niger, which commonly found on the building surface.

  2. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  3. InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Young Sheng-Joue

    2011-01-01

    Full Text Available Abstract The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111 substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

  4. Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy.

    Science.gov (United States)

    Bastiman, Faebian; Küpers, Hanno; Somaschini, Claudio; Geelhaar, Lutz

    2016-03-04

    For the Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy, growth temperature, As flux, and Ga flux have been systematically varied across the entire window of growth conditions that result in the formation of nanowires. A range of GaAs structures was observed, progressing from pure Ga droplets under negligible As flux through horizontal nanowires, tilted nanowires, vertical nanowires, and nanowires without droplets to crystallites as the As flux was increased. Quantitative analysis of the resulting sample morphology was performed in terms of nanowire number and volume density, number yield and volume yield of vertical nanowires, diameter, length, as well as the number and volume density of parasitic growth. The result is a growth map that comprehensively describes all nanowire and parasitic growth morphologies and hence enables growth of nanowire samples in a predictive manner. Further analysis indicates the combination of global Ga flux and growth temperature determines the total density of all objects, whereas the global As/Ga flux ratio independently determines the resultant sample morphology. Several dependencies observed here imply that all objects present on the substrate surface, i.e. both nanowires and parasitic structures, originate from Ga droplets.

  5. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kushvaha, S. S., E-mail: kushvahas@nplindia.org; Pal, P.; Shukla, A. K.; Joshi, Amish G.; Gupta, Govind; Kumar, M.; Singh, S.; Gupta, Bipin K.; Haranath, D. [CSIR- National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi, India 110012 (India)

    2014-02-15

    We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001) substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 10{sup 8} cm{sup −2} at 750 °C) than that of the low temperature grown sample (1.1 × 10{sup 9} cm{sup −2} at 730 °C). A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  6. Effects of AIN nucleation layer thickness on crystal quality of AIN grown by plasma-assisted molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Ren Fan; Hao Zhi-Biao; Hu Jian-Nan; Zhang Chen; Luo Yi

    2010-01-01

    In this paper,the effects of thickness of AIN nucleation layer grown at high temperature on AIN epi-layer crystalline quality are investigated.Crack-free AIN samples with various nucleation thicknesses are grown on sapphire substrates by plasma-assisted molecular beam epitaxy.The AIN crystalline quality is analysed by transmission electron microscope and x-ray diffraction(XRD)rocking curves in both(002)and(102)planes.The surface profiles of nucleation layer with different thicknesses after in-situ annealing are also analysed by atomic force microscope.A critical nucleation thickness for realising high quality AIN films is found.When the nucleation thickness is above a certain value,the(102)XRD full width at half maximum(FWHM)of AIN bulk increases with nucleation thickness increasing,whereas the(002)XRD FWHM shows an opposite trend.These phenomena can be attributed to the characteristics of nucleation islands and the evolution of crystal grains during AIN main layer growth.

  7. Superconductivity and metallic behavior in Pb{sub x}C{sub y}O{sub δ} structures prepared by focused electron beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Winhold, M., E-mail: winhold@Physik.uni-frankfurt.de; Weirich, P. M.; Schwalb, C. H.; Huth, M. [Physikalisches Institut, Goethe-University, 60438 Frankfurt am Main (Germany)

    2014-10-20

    Focused electron beam induced deposition as a direct-write approach possesses great potential to meet the demands for superconducting nanostructure fabrication especially regarding its 3D patterning capabilities combined with the high resolution in the nanometer regime. So far, however, it was not possible to fabricate superconducting structures with this technique. In this work, we present a lead-based superconductor prepared by focused electron beam induced deposition by dissociation of the precursor tetraethyllead. The as-grown structures exhibit metallic behavior and a minimum resistivity in the normal state of ρ = 16 μΩcm at T = 9 K followed by a superconducting transition at T{sub c} = 7.2 K.

  8. Dielectric spectroscopy of electron beam deposited yttrium oxide films examined in metal–insulator–metal sandwich type structures

    Energy Technology Data Exchange (ETDEWEB)

    Wiktorczyk, Tadeusz, E-mail: Tadeusz.Wiktorczyk@pwr.wroc.pl; Biegański, Piotr

    2014-01-31

    This report describes the dielectric properties of electron-beam deposited Y{sub 2}O{sub 3} thin films examined in metal–insulator–metal-type structures fabricated onto quartz substrates. The dielectric measurements have been carried out in the frequency domain from 10 mHz to 10 MHz, with a frequency response analyser. Frequency characteristics of the complex capacitance, as well as Cole–Cole and Nyquist graphs, have been presented and discussed for the temperature range 398–523 K. The results have been analyzed in terms of equivalent circuit models containing resistance–capacitance and constant phase elements (CPE). We have determined the values of the resistance, capacitance and CPE, which characterize the Y{sub 2}O{sub 3} film and near-electrode regions. It has been shown that for high frequencies/low temperatures the dielectric properties are connected with Y{sub 2}O{sub 3} film, while for low frequencies/high temperatures the dielectric response is dominated by the near-electrode regions. In the frequency range 0.1–10 MHz the important contribution of series resistance of electrodes and leads has been observed. - Highlights: • We examine the Al/Y{sub 2}O{sub 3}/Al thin film capacitors for frequency range 10 mHz–10 MHz. • The dielectric data are assigned to Y{sub 2}O{sub 3} and to metal/insulator interfaces. • The capacitance, resistance and constant phase elements describe their properties. • The values of these elements are estimated for temperatures from 398 K to 523 K.

  9. Growth and characterization of large, high quality single crystal diamond substrates via microwave plasma assisted chemical vapor deposition

    Science.gov (United States)

    Nad, Shreya

    Single crystal diamond (SCD) substrates can be utilized in a wide range of applications. Important issues in the chemical vapor deposition (CVD) of such substrates include: shrinking of the SCD substrate area, stress and cracking, high defect density and hence low electronic quality and low optical quality due to high nitrogen impurities. The primary objective of this thesis is to begin to address these issues and to find possible solutions for enhancing the substrate dimensions and simultaneously improving the quality of the grown substrates. The deposition of SCD substrates is carried out in a microwave cavity plasma reactor via the microwave plasma assisted chemical vapor deposition technique. The operation of the reactor was first optimized to determine the safe and efficient operating regime. By adjusting the matching of the reactor cavity with the help of four internal tuning length variables, the system was further matched to operate at a maximum overall microwave coupling efficiency of ˜ 98%. Even with adjustments in the substrate holder position, the reactor remains well matched with a coupling efficiency of ˜ 95% indicating good experimental performance over a wide range of operating conditions. SCD substrates were synthesized at a high pressure of 240 Torr and with a high absorbed power density of 500 W/cm3. To counter the issue of shrinking substrate size during growth, the effect of different substrate holder designs was studied. An increase in the substrate dimensions (1.23 -- 2.5 times) after growth was achieved when the sides of the seeds were shielded from the intense microwave electromagnetic fields in a pocket holder design. Using such pocket holders, high growth rates of 16 -- 32 mum/hr were obtained for growth times of 8 -- 72 hours. The polycrystalline diamond rim deposition was minimized/eliminated from these growth runs, hence successfully enlarging the substrate size. Several synthesized CVD SCD substrates were laser cut and separated

  10. Nitrogen-doping of bulk and nanotubular TiO{sub 2} photocatalysts by plasma-assisted atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yi, E-mail: Y.Zhang2@tue.nl [Eindhoven University of Technology, Inorganic Materials Chemistry Group, Department of Chemical Engineering and Chemistry, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); Creatore, Mariadriana, E-mail: M.Creatore@tue.nl [Eindhoven University of Technology, Plasma and Materials Processing Group, Department of Applied Physics, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); Ma, Quan-Bao, E-mail: Q.Ma1@tue.nl [Eindhoven University of Technology, Inorganic Materials Chemistry Group, Department of Chemical Engineering and Chemistry, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); El Boukili, Aishah, E-mail: AishaBoukili@hotmail.com [Eindhoven University of Technology, Inorganic Materials Chemistry Group, Department of Chemical Engineering and Chemistry, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); Gao, Lu, E-mail: L.Gao@tue.nl [Eindhoven University of Technology, Inorganic Materials Chemistry Group, Department of Chemical Engineering and Chemistry, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); Verheijen, Marcel A., E-mail: M.A.Verheijen@tue.nl [Eindhoven University of Technology, Plasma and Materials Processing Group, Department of Applied Physics, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); Verhoeven, M.W.G.M., E-mail: M.W.G.M.Verhoeven@tue.nl [Eindhoven University of Technology, Inorganic Materials Chemistry Group, Department of Chemical Engineering and Chemistry, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); Hensen, Emiel J.M., E-mail: e.j.m.hensen@tue.nl [Eindhoven University of Technology, Inorganic Materials Chemistry Group, Department of Chemical Engineering and Chemistry, P.O. Box 513, 5600 MB, Eindhoven (Netherlands)

    2015-03-01

    Highlights: • PA-ALD TiO{sub 2-x}N{sub x} layers on Si wafer, calcined Ti foil and nanotubular TiO{sub 2} array. • Controllable N content and chemical state in TiO{sub 2-x}N{sub x} by tuning PA-ALD parameters. • Interstitial N increases photocurrent, substitutional N decreases photocurrent. • Unchanged photocurrent of PA-ALD TiO{sub 2-x}N{sub x} layer on nanotubular TiO{sub 2} array. • Unchanged photocurrent due to the constant N content in TiO{sub 2-x}N{sub x} layer. - Abstract: Plasma-assisted atomic layer deposition (PA-ALD) was adopted to deposit TiO{sub 2-x}N{sub x} ultrathin layers on Si wafers, calcined Ti foils and nanotubular TiO{sub 2} arrays. A range of N content and chemical bond configurations were obtained by varying the background gas (O{sub 2} or N{sub 2}) during the Ti precursor exposure, while the N{sub 2}/H{sub 2}-fed inductively coupled plasma exposure time was varied between 2 and 20 s. On calcined Ti foils, a positive effect from N doping on photocurrent density was observed when O{sub 2} was the background gas with a short plasma exposure time (5 and 10 s). This correlates with the presence of interstitial N states in the TiO{sub 2} with a binding energy of 400 eV (N{sub interst}) as measured by X-ray photoelectron spectroscopy. A longer plasma time or the use of N{sub 2} as background gas results in formation of N state with a binding energy of 396 eV (N{sub subst}) and very low photocurrents. These N{sub subst} are linked to the presence of Ti{sup 3+}, which act as detrimental recombination center for photo-generated electron-hole pairs. On contrary, PA-ALD treated nanotubular TiO{sub 2} arrays show no variation of photocurrent density (with respect to the pristine nanotubes) upon different plasma exposure times and when the O{sub 2} recipe was adopted. This is attributed to constant N content in the PA-ALD TiO{sub 2-x}N{sub x}, regardless of the adopted recipe.

  11. Mechanical and electrochemical properties of ultrasonic-assisted electroless deposition of Ni–B–TiO{sub 2} composite coatings

    Energy Technology Data Exchange (ETDEWEB)

    Niksefat, Vahid; Ghorbani, Mohammad, E-mail: ghorbani@sharif.edu

    2015-06-05

    Highlights: • Ni–B–TiO{sub 2} coatings developed by ultrasonic-assisted electroless method. • Titania improves corrosion resistance and hardness of the Ni–B as-plated coatings. • Titania increases the surface film resistance of the Ni–B as-plated coatings. - Abstract: Nickel–Boron–Titania (Ni–B–TiO{sub 2}) composite coatings were successfully obtained on mild steel (St-37) by simultaneous electroless deposition. TiO{sub 2} particles were dispersed in a suspension by ultrasonic irradiation. The surface morphology, particle size, elemental composition and phase analysis of the coatings were characterized by scanning electron microscopy (SEM), inductively coupled plasma (ICP) and X-ray diffraction (XRD). The hardness and friction coefficient of as- plated and heat treated Ni–B and Ni–B–TiO{sub 2} composite coatings were determined by Vickers diamond indentation and indentation scratch tests and compared with Ni–B coatings. As a result, the hardness (1263 HV) of the as-plated Ni–B–TiO{sub 2} coatings was improved significantly. In addition, the corrosion resistance behavior of the as-plated and heat treated Ni–B and Ni–B–TiO{sub 2} coatings were analyzed by anodic polarization and electrochemical impedance spectroscopic (EIS) studies in a 3.5 wt.% NaCl solution. The as-plated composite coatings (Ni–B–TiO{sub 2}) exhibited enhanced corrosion resistance (0.2 μA/cm{sup 2}) property over Ni–B coatings.

  12. Absorption Measurement of Zn Atom Density during ICP-assisted Magnetron Sputter-deposition of Al-doped ZnO Thin Films

    OpenAIRE

    2009-01-01

    This paper reports the outlines of hollow cathode (HCD) lamp absorption system for the density measurement of sputtered metal atoms in the inductively coupled plasma (ICP) assisted sputter-deposition process of Al doped ZnO thin films. As a result, absorbance of about 6.5% was obtained, which corresponds to the Zn atom density of 1.5×1012 cm-3.

  13. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    Science.gov (United States)

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  14. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  15. Dielectric thin-films by ion-beam sputtering deposition for III-V based infrared optoelectronic imaging

    Science.gov (United States)

    Nguyen, Jean

    The growing technological industry is demanding the development of powerful and smaller devices. Dielectric thin-films can play an important role to help push towards achieving these goals. However, their advantage of high-quality material and low material costs compared to bulk can only be achieved with consideration of the technique, conditions, and parameters. The sensitivity makes every step in the process extremely important, beginning from substrate preparation to the first initial layers of growth and ending with the testing/modeling of the devices. Further, not all applications want bulk-like properties, so the ability to adjust and fine tune the material characteristics opens up a wide range of opportunities with the advancements and can drive the power of the devices to an ultimate level. This work provides the motivation, theoretical basis, and experimental results for performance enhancement of optoelectronic devices through the use of high-quality dielectric thin-films by ion-beam sputtering deposition (IBSD). The advantages and disadvantages to this technique are demonstrated and compared to others. The optimization processes, relationships, and motivation of using seven different thin-film materials have been detailed and provided. Using IBSD, the performance improvements were demonstrated on infrared lasers and detectors. For lasers, a 170% increase in maximum output power was achieved using near-0% percent anti-reflection coatings (AR) and near-100% high-reflection (HR) coatings. Following, wide tunability was achieved by using the structures in an external cavity laser system, showing nearly a three-fold improvement in tuning range. Also, structurally robust lasers were achieved with a custom-tailored HR structure designed for damage resistance to high output power density operation, showing over 14W of peak output power for MOCVD lasers. For infrared photodetectors, over a 4 orders of magnitude decrease in current density and zero-bias resistance

  16. On titanium dioxide thin films growth from the direct current electric field assisted chemical vapour deposition of titanium (IV) chloride in toluene

    Energy Technology Data Exchange (ETDEWEB)

    Romero, L. [School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); Jorge-Sobrido, A.-B.; McMillian, P.F. [Christopher Ingold Building (Chemistry), University College of London, 20 Gordon street, London WC1H 0AJ (United Kingdom); Binions, R. [School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom)

    2015-06-01

    Titanium dioxide thin films were deposited from the aerosol assisted chemical vapour deposition reaction of titanium tetrachloride in toluene (1 M) at 600 °C and 5 L min{sup −1}. Direct current electric fields were applied and increased in a range of 0 to 30 V during the reaction. Changes in particle size, agglomeration and particle shape were observed. Raman spectroscopy analysis revealed different composition of anatase and rutile and crystal phase depending on the field strength applied. The photocatalytic activity was calculated from the half-life or time needed by the films to degrade 50% Resazurin dye-ink initial concentration. High photocatalytic performance with high anatase content (98.3%) was observed with half-life values of 3.9 min. Deposited films with pure content in rutile showed better photocatalytic performance than films with mix of crystal phases with anatase content below 40%. - Highlights: • Electric field assisted chemical vapour deposition used to synthesis titania thin films. • Significant alterations to crystallographic orientation and microstructure observed • Order of magnitude reduction in half life of dye degradation obtainable.

  17. Electroless copper on refractory and noble metal substrates with an ultra-thin plasma-assisted atomic layer deposited palladium layer

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young-Soon [Thin Film Technology Lab, School of Chemical Engineering, Chonbuk National University, Jeonju 561756 (Korea, Republic of); Kim, Hyung-Il [Thin Film Technology Lab, School of Chemical Engineering, Chonbuk National University, Jeonju 561756 (Korea, Republic of); Cho, Joong-Hee [Thin Film Technology Lab, School of Chemical Engineering, Chonbuk National University, Jeonju 561756 (Korea, Republic of); Seo, Hyung-Kee [Thin Film Technology Lab, School of Chemical Engineering, Chonbuk National University, Jeonju 561756 (Korea, Republic of); Dar, M.A. [Thin Film Technology Lab, School of Chemical Engineering, Chonbuk National University, Jeonju 561756 (Korea, Republic of); Shin, Hyung-Shik [Thin Film Technology Lab, School of Chemical Engineering, Chonbuk National University, Jeonju 561756 (Korea, Republic of); Ten Eyck, Gregory A. [Department of Physics, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Lu, Toh-Ming [Department of Physics, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Senkevich, Jay J. [Brewer Science Inc., Rolla, MO 65401 (United States)]. E-mail: jsenkevich@brewerscience.com

    2006-02-25

    Electroless Cu was investigated on refractory metal, W and TaN {sub X}, and Ir noble metal substrates with a plasma-assisted atomic layer deposited palladium layer for the potential back-end-of-the-line (BEOL) metallization of advanced integrated devices. The sodium and potassium-free Cu electroless bath consisted of: ethylenediamine tetraacetic acid (EDTA) as a chelating agent, glyoxylic acid as a reducing agent, and additional chemicals such as polyethylene glycol, 2,2'-dipyridine and RE-610 as surfactant, stabilizer and wetting agent respectively. The growth and chemical characterization of the Cu films was carried out with a field emission scanning electron microscope (FE-SEM), X-ray photoelectron spectroscopy (XPS), and Rutherford backscattering spectrometry (RBS). Group VIII metals such as Pt, Pd, etc., are stable in the electroless bath and catalytic towards the oxidation of glyoxylic acid and therefore work well for the electroless deposition of Cu. From RBS analysis, the amount of carbon and oxygen in Cu films were less than 1-3%. The Cu films were electroless deposited at 45-50 deg. C on patterned tantalum nitride with plasma-assisted atomic layer deposited (PA-ALD) Pd as a catalytic layer. Electroless Cu trench fill was successful with ultrasonic vibration, RE-610, and lowering the temperature to 45-50 deg. C on TaN {sub X} with the PA-ALD Pd catalytic layer.

  18. Metal impurity-assisted formation of nanocone arrays on Si by low energy ion-beam irradiation

    Science.gov (United States)

    Steeves Lloyd, Kayla; Bolotin, Igor L.; Schmeling, Martina; Hanley, Luke; Veryovkin, Igor V.

    2016-10-01

    Fabrication of nanocone arrays on Si surfaces was demonstrated using grazing incidence irradiation with 1 keV Ar+ ions concurrently sputtering the surface and depositing metal impurity atoms on it. Among three materials compared as co-sputtering targets Si, Cu and stainless steel, only steel was found to assist the growth of dense arrays of nanocones at ion fluences between 1018 and 1019 ions/cm2. The structural characterization of samples irradiated with these ion fluences using Scanning Electron Microscopy and Atomic Force Microscopy revealed that regions far away from co-sputtering targets are covered with nanoripples, and that nanocones popped-up out of the rippled surfaces when moving closer to co-sputtering targets, with their density gradually increasing and reaching saturation in the regions close to these targets. The characterization of the samples' chemical composition with Total Reflection X-ray Fluorescence Spectrometry and X-ray Photoelectron Spectroscopy revealed that the concentration of metal impurities originating from stainless steel (Fe, Cr and Ni) was relatively high in the regions with high density of nanocones (Fe reaching a few atomic percent) and much lower (factor of 10 or so) in the region of nanoripples. Total Reflection X-ray Fluorescence Spectrometry measurements showed that higher concentrations of these impurities are accumulated under the surface in both regions. X-ray Photoelectron Spectroscopy experiments showed no direct evidence of metal silicide formation occurring on one region only (nanocones or nanoripples) and thus showed that this process could not be the driver of nanocone array formation. Also, these measurements indicated enhancement in oxide formation on regions covered by nanocones. Overall, the results of this study suggest that the difference in concentration of metal impurities in the thin near-surface layer forming under ion irradiation might be responsible for the differences in surface structures.

  19. Molecular beam epitaxy of GaAs nanowires and their sustainability for optoelectronic applications. Comparing Au- and self-assisted growth methods

    Energy Technology Data Exchange (ETDEWEB)

    Breuer, Steffen

    2011-09-28

    In this work the synthesis of GaAs nanowires by molecular beam epitaxy (MBE) using the vapour-liquid-solid (VLS) mechanism is investigated. A comparison between Au- and self-assisted VLS growth is at the centre of this thesis. While the Au-assisted method is established as a versatile tool for nanowire growth, the recently developed self-assisted variation results from the exchange of Au by Ga droplets and thus eliminates any possibility of Au incorporation. By both methods, we achieve nanowires with epitaxial alignment to the Si(111) substrates. Caused by differences during nanowire nucleation, a parasitic planar layer grows between the nanowires by the Au-assisted method, but can be avoided by the self-assisted method. Au-assisted nanowires grow predominantly in the metastable wurtzite crystal structure, while their self-assisted counterparts have the zincblende structure. All GaAs nanowires are fully relaxed and the strain arising from the lattice mismatch between GaAs and Si of 4.1 % is accommodated by misfit dislocations at the interface. Self-assisted GaAs nanowires are generally found to have vertical and non-polar side facets, while tilted and polar nanofacets were described for Au-assisted GaAs nanowires. We employ VLS nucleation theory to understand the effect of the droplet material on the lateral facets. Optoelectronic applications require long minority carrier lifetimes at room temperature. We fabricate GaAs/(Al,Ga)As core-shell nanowires and analyse them by transient photoluminescence (PL) spectroscopy. The results are 2.5 ns for the self-assisted nanowires as well as 9 ps for the Au-assisted nanowires. By temperature-dependent PL measurements we find a characteristic activation energy of 77 meV that is present only in the Au-assisted nanowires. We conclude that most likely Au is incorporated from the droplets into the GaAs nanowires and acts as a deep, non-radiative recombination centre.

  20. Cupric and cuprous oxide by reactive ion beam sputter deposition and the photosensing properties of cupric oxide metal–semiconductor–metal Schottky photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Min-Jyun; Lin, Yong-Chen; Chao, Liang-Chiun, E-mail: lcchao@mail.ntust.edu.tw; Lin, Pao-Hung; Huang, Bohr-Ran

    2015-08-15

    Highlights: • CuO and Cu{sub 2}O were deposited by reactive ion beam sputter deposition. • Single phase CuO thin film is obtained with Ar:O{sub 2} = 2:1. • CuO MSM PD shows photoresponse from 400 nm to 1.30 μm. • CuO MSM PD is RC limited with a decay time less than 1 μs. - Abstract: Cupric (CuO) and cuprous (Cu{sub 2}O) oxide thin films have been deposited by reactive ion beam sputter deposition at 400 °C with an Ar:O{sub 2} ratio from 2:1 to 12:1. With an Ar:O{sub 2} ratio of 2:1, single phase polycrystalline CuO thin films were obtained. Decreasing oxygen flow rate results in CuO + Cu{sub 2}O and Cu{sub 2}O + Cu mixed thin films. As Ar:O{sub 2} ratio reaches 12:1, Cu{sub 2}O nanorods with diameter of 250 nm and length longer than 1 μm were found across the sample. Single phase CuO thin film exhibits an indirect band gap of 1.3 eV with a smooth surface morphology. CuO metal–semiconductor–metal (MSM) Schottky photodiodes (PD) were fabricated by depositing Cu interdigitated electrodes on CuO thin films. Photosensing properties of the CuO PD were characterized from 350 to 1300 nm and a maximum responsivity of 43 mA/W was found at λ = 700 nm. The MSM PD is RC limited with a decay time constant less than 1 μs.

  1. Simultaneous Counter-Ion Co-Deposition a Technique Enabling Matrix Isolation Spectroscopy Studies Using Low-Energy Beams of Mass-Selected Ions

    Science.gov (United States)

    Ludwig, Ryan M.; Moore, David T.

    2014-06-01

    Matrix isolation spectroscopy was first developed in Pimentel's group during the 1950's to facilitate spectroscopic studies of transient species. Cryogenic matrices of condensed rare gases provide an inert chemical environment with facile energy dissipation and are transparent at all wavelengths longer than vacuum UV, making them ideal for studying labile and reactive species such as radicals, weakly bound complexes, and ions. Since frozen rare gases are poor electrolytes, studies of ions require near-equal populations of anions and cations in order to stabilize the number densities required for spectroscopic experiments. Many techniques for generation of ions for using in matrix isolation studies satisfy this criterion intrinsically, however when ion beams generated in external sources are deposited, the counter-ions typically arise via secondary processes that are at best loosely controlled. It has long been recognized that it would be desirable to stabilize deposition of mass-selected ions generated in an external source using simultaneous co-deposition of a beam of counter-ions, however previous attempts to achieve this have been reported as unsuccessful. The Moore group at Lehigh has demonstrated successful experiments of this type, using mass-selected anions generated from a metal cluster source, co-deposited with a balanced current of cations generated in a separate electron ionization source. This talk will focus on the details of the technique, and present some results from proof-of-concept studies on anionic copper carbonyl complexes formed in argon matrices following co-deposition of Cu- with Ar+ or Kr+. Funding support from NSF CAREER Award CHE-0955637 is gratefully acknowledged. Whittle et al., J. Chem. Phys. 22, p.1943 (1954); Becker et al., J. Chem. Phys. 25, p.224 (1956). Godbout et al., J. Chem. Phys. 96, p.2892 (1996). Sabo et al., Appl. Spectrosc. 45, p. 535 (1991).

  2. Structural properties and surface wettability of Cu-containing diamond-like carbon films prepared by a hybrid linear ion beam deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Peng; Sun, Lili; Li, Xiaowei [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Xu, Sheng [Gao Hong Coating Technology Co., Ltd, Huzhou 313000 (China); Ke, Peiling [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Wang, Aiying, E-mail: aywang@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2015-06-01

    Cu-containing diamond-like carbon (Cu-DLC) films were deposited on Si/glass substrate by a hybrid ion beam deposition system. The Cu concentration (0.1–39.7 at.%) in the film was controlled by varying the sputtering current. The microstructure and composition of Cu-DLC films were investigated systematically. The surface topography, roughness and surface wettability of the films were also studied. Results indicated that with increasing the Cu concentration, the water contact angle of the films changed from 66.8° for pure carbon film to more than 104.4° for Cu-DLC films with Cu concentration larger than 24.4 at.%. In the hydrophilic region, the polar surface energy decreased from 30.54 mJ/m{sup 2} for pure carbon film to 2.48 mJ/m{sup 2} for the film with Cu 7.0 at.%. - Highlights: • Cu-containing diamond-like carbon (DLC) films were deposited by a hybrid ion beam system. • Cu-containing DLC films exhibited a wide range of water contact angle. • The water contact angles vary with the surface energies and surface roughness.

  3. Influence of pulse ratio on codeposition of copper species with calcium phosphate coatings on titanium by means of electrochemically assisted deposition.

    Science.gov (United States)

    Wolf-Brandstetter, Cornelia; Oswald, Steffen; Bierbaum, Susanne; Wiesmann, Hans-Peter; Scharnweber, Dieter

    2014-01-01

    Aim of this study was to combine the well-known biocompatibility and ostoeconductivity of thin calcium phosphate coatings on titanium with proangiogenic signals from codeposited copper species. Copper species could be integrated in mineral layers based on hydroxyapatite by means of electrochemically assisted deposition from electrolytes containing calcium, phosphate, and copper ions. Different combinations of duration and intensity of galvanostatic pulses result in different amounts of deposited calcium phosphate and of copper species even for the same applied total charge. Absolute amounts of copper varied between 2.1 and 6.9 μg/cm², and the copper was distributed homogeneously as shown by EDX mapping. The presence of copper did not change the crystalline phase of deposited calcium phosphate (hydroxyapatite) but provoked a significant decrease in deposited amounts by factor 3 to 4. The copper was deposited mainly as Cu(I) species with a minor fraction of basic copper phosphates. Reduction of copper occurred not only at the surface of titanium but also within the hydroxyapatite coating due to the reaction with hydrogen produced by the electrolysis of water during the cathodic polarization of the substrate.

  4. Ecofriendly and Nonvacuum Electrostatic Spray-Assisted Vapor Deposition of Cu(In,Ga)(S,Se)2 Thin Film Solar Cells.

    Science.gov (United States)

    Hossain, Md Anower; Wang, Mingqing; Choy, Kwang-Leong

    2015-10-14

    Chalcopyrite Cu(In,Ga)(S,Se)2 (CIGSSe) thin films have been deposited by a novel, nonvacuum, and cost-effective electrostatic spray-assisted vapor deposition (ESAVD) method. The generation of a fine aerosol of precursor solution, and their controlled deposition onto a molybdenum substrate, results in adherent, dense, and uniform Cu(In,Ga)S2 (CIGS) films. This is an essential tool to keep the interfacial area of thin film solar cells to a minimum value for efficient charge separation as it helps to achieve the desired surface smoothness uniformity for subsequent cadmium sulfide and window layer deposition. This nonvacuum aerosol based approach for making the CIGSSe film uses environmentally benign precursor solution, and it is cheaper for producing solar cells than that of the vacuum-based thin film solar technology. An optimized CIGSSe thin film solar cell with a device configuration of molybdenum-coated soda-lime glass substrate/CIGSSe/CdS/i-ZnO/AZO shows the photovoltaic (j-V) characteristics of Voc=0.518 V, jsc=28.79 mA cm(-2), fill factor=64.02%, and a promising power conversion efficiency of η=9.55% under simulated AM 1.5 100 mW cm(-2) illuminations, without the use of an antireflection layer. This demonstrates the potential of ESAVD deposition as a promising alternative approach for making thin film CIGSSe solar cells at a lower cost.

  5. Sub-micro a-C:H patterning of silicon surfaces assisted by atmospheric-pressure plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Boileau, Alexis; Gries, Thomas; Noël, Cédric; Perito Cardoso, Rodrigo; Belmonte, Thierry

    2016-11-01

    Micro and nano-patterning of surfaces is an increasingly popular challenge in the field of the miniaturization of devices assembled via top-down approaches. This study demonstrates the possibility of depositing sub-micrometric localized coatings—spots, lines or even more complex shapes—made of amorphous hydrogenated carbon (a-C:H) thanks to a moving XY stage. Deposition was performed on silicon substrates using chemical vapor deposition assisted by an argon atmospheric-pressure plasma jet. Acetylene was injected into the post-discharge region as a precursor by means of a glass capillary with a sub-micrometric diameter. A parametric study was carried out to study the influence of the geometric configurations (capillary diameter and capillary-plasma distance) on the deposited coating. Thus, the patterns formed were investigated by scanning electron microscopy and atomic force microscopy. Furthermore, the chemical composition of large coated areas was investigated by Fourier transform infrared spectroscopy according to the chosen atmospheric environment. The observed chemical bonds show that reactions of the gaseous precursor in the discharge region and both chemical and morphological stability of the patterns after treatment are strongly dependent on the surrounding gas. Various sub-micrometric a-C:H shapes were successfully deposited under controlled atmospheric conditions using argon as inerting gas. Overall, this new process of micro-scale additive manufacturing by atmospheric plasma offers unusually high-resolution at low cost.

  6. Deposição e perdas da calda em feijoeiro em aplicação com assistência de ar na barra pulverizadora Spray deposition and spray loss using air-assistance boom on bean plants

    Directory of Open Access Journals (Sweden)

    Carlos Gilberto Raetano

    2004-01-01

    Full Text Available Com o objetivo de avaliar a influência da assistência de ar na deposição da calda de pulverização, em plantas de feijoeiro (Phaseolus vulgaris aos 26 dias após a emergência (DAE, com pontas de pulverização de jato cônico vazio (JA-0,5 e JA-1 e jato plano (AXI-110015, e volumes de calda, foi realizado um experimento em delineamento inteiramente casualizado, utilizando como traçador o íon cobre. Alvos coletores (papel de filtro com 3 x 3 cm foram afixados nas superfícies adaxial e abaxial de folíolos posicionados nas partes superior e inferior das plantas. Para aplicar a solução traçadora, utilizou-se pulverizador com barras de 14 metros, com e sem assistência de ar, volumes de 60 e 100 L.ha-1, e velocidade do ar correspondente a 50% da rotação máxima do ventilador. Após a aplicação, os coletores foram lavados individualmente em solução extratora de ácido nítrico a 1,0 mol.L-1, e a quantificação dos depósitos através de espectrofotometria. A assistência de ar não influenciou na deposição da calda tanto a 60 quanto a 100 L.ha-1. O maior volume proporcionou maiores depósitos, sendo constatadas elevadas perdas para o solo (mais de 60%.Aiming to evaluate the effect of air-assistance in spray deposition on bean plants (Phaseolus vulgaris with hollow nozzles (JA-0,5 and JA-1 and flat fan nozzle type (AXI-110015, and volume rates by air-assisted and non-assisted sprayers, a completely randomized experiment was carried out using copper ion as a tracer to the evaluation of the deposits. At 26 days after emergence, artificial targets were positioned on the upper and under-side of the leaflets, on the top and bottom parts of the same plants under spray boom. For the application of tracer solution it was used a fourteen meter boom sprayer with and without air-assistance at 60 and 100 L.ha-1 of volume rates. The air flow was 50% of the maximum fan rotation. After application, targets were individually washed with an

  7. Effect of Substrate Temperature on Structural and Optical Properties of Nanocrystalline CdTe Thin Films Deposited by Electron Beam Evaporation

    OpenAIRE

    M. Rigana Begam; N. Madhusudhana Rao; S. Kaleemulla; M. Shobana; N. Sai Krishna; M. Kuppan

    2013-01-01

    Nanocrystalline Cadmium Telluride (CdTe) thin films were deposited onto glass substrates using electron beam evaporation technique. The effect of substrate temperature on the structural, morphological and optical properties of CdTe thin films has been investigated. All the CdTe films exhibited zinc blende structure with (111) preferential orientation. The crystallite size of the films increased from 35 nm to 116 nm with the increase of substrate temperature and the band gap of the films decre...

  8. Effect of Substrate Temperature on Structural and Optical Properties of Nanocrystalline CdTe Thin Films Deposited by Electron Beam Evaporation

    Directory of Open Access Journals (Sweden)

    M. Rigana Begam

    2013-07-01

    Full Text Available Nanocrystalline Cadmium Telluride (CdTe thin films were deposited onto glass substrates using electron beam evaporation technique. The effect of substrate temperature on the structural, morphological and optical properties of CdTe thin films has been investigated. All the CdTe films exhibited zinc blende structure with (111 preferential orientation. The crystallite size of the films increased from 35 nm to 116 nm with the increase of substrate temperature and the band gap of the films decreased from 2.87 eV to 2.05 eV with the increase of the crystallite size.

  9. Ion beam and complementary SEM and XRD characterization of YBa{sub 2}Cu{sub 3}O{sub 7-x} films obtained by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Branescu, Maria [National Institute for R and D of Materials Physics, 105 bis Atomistilor Street, P.O. Box MG-7, 077125 Bucharest-Magurele (Romania)]. E-mail: maria_branescu@yahoo.com; Thome, L. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, 91406 Orsay Cedex (France); Pantelica, D. [' Horia Hulubei' National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, Bucharest (Romania); Ward, I. [CEA, 810 Kifer Road, Sunnyvale, CA 94086 (United States); Vailionis, A. [Stanford University, Stanford, CA 94305 (United States); Ionescu, P. [' Horia Hulubei' National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, Bucharest (Romania)

    2006-08-15

    We report two ion beam analysis techniques, elastic recoil detection analysis (ERDA) and Rutherford backscattering (RBS), to characterize YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) films, obtained in situ by pulsed laser deposition (PLD). Initially, ERDA measurements were performed on a thin film to evaluate the PLD rate. RBS measurements correlated with complementary scanning electron microscopy and X-ray diffraction measurements were performed afterwards on a good quality thick YBCO film to determine its stoichiometry, thickness, crystalline structure and surface morphology.

  10. The Influences of Thickness on the Optical and Electrical Properties of Dual-Ion-Beam Sputtering-Deposited Molybdenum-Doped Zinc Oxide Layer

    Directory of Open Access Journals (Sweden)

    Chin-Chiuan Kuo

    2011-01-01

    Full Text Available The thickness of transparent conductive oxide (TCO layer significantly affects not only the optical and electrical properties, but also its mechanical durability. To evaluate these influences on the molybdenum-doped zinc oxide layer deposited on a flexible polyethersulfone (PES substrate by using a dual-ion-beam sputtering system, films with various thicknesses were prepared at a same condition and their optical and electrical performances have been compared. The results show that all the deposited films present a crystalline wurtzite structure, but the preferred orientation changes from (002 to (100 with increasing the film thickness. Thicker layer contains a relative higher carrier concentration, but the consequently accumulated higher internal stress might crack the film and retard the carrier mobility. The competition of these two opposite trends for carrier concentration and carrier mobility results in that the electrical resistivity of molybdenum-doped zinc oxide first decreases with the thickness but suddenly rises when a critical thickness is reached.

  11. The structural transition from epitaxial Fe/Pt multilayers to an ordered FePt film using low energy ion beam sputtering deposition with no buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Chih-Hao, E-mail: chlee@mx.nthu.edu.tw [Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Chen, Yu-Sheng [Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China); Liu, Li-Jung [Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Huang, J.C.A. [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China)

    2014-11-03

    An epitaxial L1{sub 0} FePt thin film grown from an [Fe(10 Å)/Pt(10 Å)]{sub 15} multilayer with the orientation of (001) was prepared by an ion beam sputtering deposition method without buffer layer. From the measurement data of X-ray diffraction and X-ray reflectivity, the multilayer structure was totally disappeared and a uniform FePt alloy thin film was formed at temperatures higher than 600 °C. For the as-deposited thin film grown at 100 °C, the multilayer already possesses an epitaxial structure. The epitaxial relation is FePt(001)[100]//MgO(001)[100] and this epitaxial relation persists after sequential high temperature annealing. An epitaxial L1{sub 0} ordered FePt(001) film with order parameter of 0.95 was obtained when the annealing temperature reached 650 °C. The ordered FePt(001) thin film has a perpendicular magnetic anisotropy with a squareness of 0.95 ± 0.03 on the magnetic hysteresis loop. This experiment demonstrates that the low energy ion beam sputtering deposition will preserve the epitaxial relation with no buffer layer between multilayer and substrate. - Highlights: • The Fe/Pt films using ion sputtering deposition with no buffer layer is epitaxial. • Multilayer structure was totally disappeared at temperatures higher than 600 °C. • Order parameter reach 0.95 after annealing at 650 °C. • Interfacial epitaxial FePt alloy already formed at 100 °C.

  12. Direct Imaging Mass Spectrometry of Plant Leaves Using Surface-assisted Laser Desorption/Ionization with Sputter-deposited Platinum Film.

    Science.gov (United States)

    Ozawa, Tomoyuki; Osaka, Issey; Hamada, Satoshi; Murakami, Tatsuya; Miyazato, Akio; Kawasaki, Hideya; Arakawa, Ryuichi

    2016-01-01

    Plant leaves administered with systemic insecticides as agricultural chemicals were analyzed using imaging mass spectrometry (IMS). Matrix-assisted laser desorption/ionization (MALDI) is inadequate for the detection of insecticides on leaves because of the charge-up effect that occurs on the non-conductive surface of the leaves. In this study, surface-assisted laser desorption/ionization with a sputter-deposited platinum film (Pt-SALDI) was used for direct analysis of chemicals in plant leaves. Sputter-deposited platinum (Pt) films were prepared on leaves administered with the insecticides. A sputter-deposited Pt film with porous structure was used as the matrix for Pt-SALDI. Acephate and acetamiprid contained in the insecticides on the leaves could be detected using Pt-SALDI-MS, but these chemical components could not be adequately detected using MALDI-MS because of the charge-up effect. Enhancement of ion yields for the insecticides was achieved using Pt-SALDI, accompanied by prevention of the charge-up effect by the conductive Pt film. The movement of systemic insecticides in plants could be observed clearly using Pt-SALDI-IMS. The distribution and movement of components of systemic insecticides on leaves could be analyzed directly using Pt-SALDI-IMS. Additionally, changes in the properties of the chemicals with time, as an indicator of the permeability of the insecticides, could be evaluated.

  13. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Boniardi, Mattia; Redaelli, Andrea [Micron Semiconductor Italia S.r.l., Via C. Olivetti, 2, 20864, Agrate Brianza, MB (Italy)

    2015-01-12

    Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  14. Fabrication of Ag:TiO2 Nanocomposite Thin Films by Sol-Gel Followed by Electron Beam Physical Vapour Deposition Technique

    Directory of Open Access Journals (Sweden)

    Manish Kumar

    2013-01-01

    Full Text Available Ag:TiO2 nanocomposite films have been synthesized by sol-gel method followed by electron beam physical vapour deposition. Targets for this deposition were prepared by a hydraulic press using a powder containing Ag and TiO2 prepared by sol-gel technique. Microstructure, surface, and plasmonic properties of nanocomposite films were studied using glancing angle X-ray diffractometer, atomic force microscopy, field emission secondary electron microscopy, and UV-Vis spectroscopy. Microstructural study reveals that Ag nanoparticles are embedded in TiO2 matrix consisting of mixed phases of anatase and rutile. Size estimation using Scherrer formula reveals that average crystallite size of Ag nanoparticles is 23 nm. Surface morphological studies indicate that deposited films are uniform and intact to the substrate and have very low value of root mean square roughness. Optical studies exhibit a surface plasmon resonance induced absorption band in visible region, which is the characteristic feature of Ag nanoparticles. The intensity of this absorption band is found to increase with the increase in deposition time. Multiple peaks observed in absorption band were explained using the concepts of extended Mie scattering. Preliminary experiments also suggested that these nanocomposite films exhibit promising photocatalytic properties, which can be used for water treatment.

  15. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications.

    Science.gov (United States)

    Alias, Mohd S; Yang, Yang; Ng, Tien K; Dursun, Ibrahim; Shi, Dong; Saidaminov, Makhsud I; Priante, Davide; Bakr, Osman M; Ooi, Boon S

    2016-01-01

    The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption.

  16. An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE.

    Science.gov (United States)

    Poppitz, David; Lotnyk, Andriy; Gerlach, Jürgen W; Lenzner, Jörg; Grundmann, Marius; Rauschenbach, Bernd

    2015-06-01

    Ion-beam assisted molecular-beam epitaxy was used for direct growth of epitaxial GaN thin films on super-polished 6H-SiC(0001) substrates. The GaN films with different film thicknesses were studied using reflection high energy electron diffraction, X-ray diffraction, cathodoluminescence and primarily aberration-corrected scanning transmission electron microscopy techniques. Special attention was devoted to the microstructural characterization of GaN thin films and the GaN-SiC interface on the atomic scale. The results show a variety of defect types in the GaN thin films and at the GaN-SiC interface. A high crystalline quality of the produced hexagonal GaN thin films was demonstrated. The gained results are discussed.

  17. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications

    KAUST Repository

    Alias, Mohd Sharizal

    2015-12-22

    The high optical gain and absorption of organic–inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption.

  18. Analysis of Mg content of Zn1-xMgxO film grown on sapphire substrates by plasma-assisted molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    YAN Fengping; JIAN Shuisheng; K. Ogata; K. Koike; S. Sasa; M. Inoue; M. Yano

    2004-01-01

    The Mg content of Zn1-xMgxO film grown on A-sapphire substrates by plasma-assisted molecular beam epitaxy is measured by inductively coupled plasma (ICP)and electronic probe microanalysis (EPMA). A theoretical model for analyzing the difference in the Mg content between Zn-rich and Zn-deficient conditions in the growth process is established, and the mathematical relation between Mg content and the temperature of the Mg cell is formulated under Zn-rich condition. The formula derived is proven to be correct by experiments.

  19. Copper-vapor-assisted chemical vapor deposition for high-quality and metal-free single-layer graphene on amorphous SiO2 substrate.

    Science.gov (United States)

    Kim, Hyungki; Song, Intek; Park, Chibeom; Son, Minhyeok; Hong, Misun; Kim, Youngwook; Kim, Jun Sung; Shin, Hyun-Joon; Baik, Jaeyoon; Choi, Hee Cheul

    2013-08-27

    We report that high-quality single-layer graphene (SLG) has been successfully synthesized directly on various dielectric substrates including amorphous SiO2/Si by a Cu-vapor-assisted chemical vapor deposition (CVD) process. The Cu vapors produced by the sublimation of Cu foil that is suspended above target substrates without physical contact catalyze the pyrolysis of methane gas and assist nucleation of graphene on the substrates. Raman spectra and mapping images reveal that the graphene formed on a SiO2/Si substrate is almost defect-free and homogeneous single layer. The overall quality of graphene grown by Cu-vapor-assisted CVD is comparable to that of the graphene grown by regular metal-catalyzed CVD on a Cu foil. While Cu vapor induces the nucleation and growth of SLG on an amorphous substrate, the resulting SLG is confirmed to be Cu-free by synchrotron X-ray photoelectron spectroscopy. The SLG grown by Cu-vapor-assisted CVD is fabricated into field effect transistor devices without transfer steps that are generally required when SLG is grown by regular CVD process on metal catalyst substrates. This method has overcome two important hurdles previously present when the catalyst-free CVD process is used for the growth of SLG on fused quartz and hexagonal boron nitride substrates, that is, high degree of structural defects and limited size of resulting graphene, respectively.

  20. High Performance Photocathodes based on Molecular Beam Epitaxy Deposition for Next Generation Photo Detectors and Light Sources

    CERN Document Server

    Xie, Junqi; Wagner, Robert

    2013-01-01

    The development of high-performance photocathodes is a key challenge for future accelerator and particle physics applications. In this paper photocathode growth through molecular beam epitaxy is introduced as a promising technique to obtain robust, highly efficient alkali-antimonide based photocathodes. Recent research shows that the quantum efficiency of photocathodes can be significantly enhanced through control of the photocathode crystallinity. Molecular beam epitaxy allows for cost-effective growth of large-area photocathodes with excellent control of the stoichiometry and crystallinity, making photocathodes with peak quantum efficiencies exceeding 35% routine.

  1. Superconductivity in the system Mo{sub x}C{sub y}Ga{sub z}O{sub δ} prepared by focused ion beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Weirich, P. M., E-mail: p.weirich@Physik.uni-frankfurt.de; Schwalb, C. H.; Winhold, M.; Huth, M. [Physikalisches Institut, Goethe-University, 60438 Frankfurt am Main (Germany)

    2014-05-07

    We have prepared the new amorphous superconductor Mo{sub x}C{sub y}Ga{sub z}O{sub δ} with a maximum critical temperature T{sub c} of 3.8 K by the direct-write nano-patterning technique of focused (gallium) ion beam induced deposition (FIBID) using Mo(CO){sub 6} as precursor gas. From a detailed analysis of the temperature-dependent resistivity and the upper critical field, we found clear evidence for proximity of the samples to a disorder-induced metal-insulator transition. We observed a strong dependence of T{sub c} on the deposition parameters and identified clear correlations between T{sub c}, the localization tendency visible in the resistance data and the sample composition. By an in-situ feedback-controlled optimization process in the FIB-induced growth, we were able to identify the beam parameters which lead to samples with the largest T{sub c}-value and sharpest transition into the superconducting state.

  2. Electrically conducting, ultra-sharp, high aspect-ratio probes for AFM fabricated by electron-beam-induced deposition of platinum

    Energy Technology Data Exchange (ETDEWEB)

    Brown, Jason, E-mail: jason.brown@physics.ox.ac.uk [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Kocher, Paul; Ramanujan, Chandra S; Sharp, David N [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Torimitsu, Keiichi [NTT Basic Research Laboratories, NTT Corporation, Atsugi, 243-0198 (Japan); Ryan, John F [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom)

    2013-10-15

    We report on the fabrication of electrically conducting, ultra-sharp, high-aspect ratio probes for atomic force microscopy by electron-beam-induced deposition of platinum. Probes of 4.0 ±1.0 nm radius-of-curvature are routinely produced with high repeatability and near-100% yield. Contact-mode topographical imaging of the granular nature of a sputtered gold surface is used to assess the imaging performance of the probes, and the derived power spectral density plots are used to quantify the enhanced sensitivity as a function of spatial frequency. The ability of the probes to reproduce high aspect-ratio features is illustrated by imaging a close-packed array of nanospheres. The electrical resistance of the probes is measured to be of order 100 kΩ. - Highlights: • Electrically conducting, ultra-sharp, high aspect-ratio probes for AFM with radius-of-curvature 4.0±±1.0 nm. • AFM probe fabrication by electron-beam-induced deposition of platinum. • Enhanced spatial resolution demonstrated through AFM of sputtered gold grains. • AFM imaging of deep clefts and recesses on a close-packed array of nanospheres.

  3. Effects of Additional Oxygen Flow on the Optical and Electrical Properties of Ion Beam Sputtering Deposited Molybdenum-Doped Zinc Oxide Layer

    Directory of Open Access Journals (Sweden)

    Chin-Chiuan Kuo

    2012-01-01

    Full Text Available The transparent conductive molybdenum-doped zinc oxide (MZO was deposited onto a flexible polyethersulfone (PES substrate by using an ion beam sputtering system. An argon ion beam was used to sputter an MZO target at constant pressure of 0.67 Pa and substrate temperature of 130∘C with varying the oxygen flow rate from 0 to 12 sccm. The influences of additional oxygen flow on the microstructure, optical, and electrical properties of films were investigated. The obtained MZO films present a crystalline structure. With increasing the oxygen flow rate, their electrical resistivity increases, and the optical band gap decreases from 3.46 to 3.20 eV. The film deposited in the atmosphere without introducing oxygen exhibits the best optical transmittance of 82.9% at 550 nm wavelength, electrical resistivity of 8.32 × 10−3 Ω cm, carrier concentration of 6.82 × 1020 cm−3, and carrier mobility of 2.45 cm2/Vs.

  4. Hydrogen Charging Effects in Pd/Ti/TiO2/Ti Thin Films Deposited on Si(111 Studied by Ion Beam Analysis Methods

    Directory of Open Access Journals (Sweden)

    K. Drogowska

    2012-01-01

    Full Text Available Titanium and titanium dioxide thin films were deposited onto Si(111 substrates by magnetron sputtering from a metallic Ti target in a reactive Ar+O2 atmosphere, the composition of which was controlled by precision gas controllers. For some samples, 1/3 of the surface was covered with palladium using molecular beam epitaxy. Chemical composition, density, and layer thickness of the layers were determined by Auger electron spectroscopy (AES and Rutherford backscattering spectrometry (RBS. The surface morphology was studied using high-resolution scanning electron microscopy (HRSEM. After deposition, smooth, homogenous sample surfaces were observed. Hydrogen charging for 5 hours under pressure of 1 bar and at temperature of 300°C results in granulation of the surface. Hydrogen depth profile was determined using secondary ion mass spectrometry (SIMS and nuclear Reaction Analysis (N-15 method, using a 15N beam at and above the resonance energy of 6.417 MeV. NRA measurements proved a higher hydrogen concentration in samples with partially covered top layers, than in samples without palladium. The highest value of H concentration after charging was about 50% (in the palladium-covered part and about 40% in titanium that was not covered by Pd. These values are in good agreement with the results of SIMS measurements.

  5. Preparation of high-quality hydrogenated amorphous silicon film with a new microwave electron cyclotron resonance chemical vapour deposition system assisted with hot wire

    Institute of Scientific and Technical Information of China (English)

    Zhu Xiu-Hong; Chen Guang-Hua; Yin Sheng-Yi; Rong Yan-Dong; Zhang Wen-Li; Hu Yue-Hui

    2005-01-01

    The preparation of high-quality hydrogenated amorphous silicon (a-Si:H) film with a new microwave electron cyclotron resonance-chemical vapour deposition (MWECR-CVD) system assisted with hot wire is presented. In this system the hot wire plays an important role in perfecting the microstructure as well as improving the stability and the optoelectronic properties of the a-Si:H film. The experimental results indicate that in the microstructure of the a-Si:H film, the concentration of dihydride is decreased and a trace of microcrystalline occurs, which is useful to improve its stability, and that in the optoelectronic properties of the a-Si:H film, the deposition rate reaches above 2.0nm/s and the photosensitivity increases up to 4.71× 105.

  6. Composite films prepared by plasma ion-assisted deposition (IAD) for design and fabrication of antireflection coatings in visible and near-infrared spectral regions

    Science.gov (United States)

    Tsai, Rung-Ywan; Ho, Fang C.

    1994-11-01

    Ion-assisted deposition (IAD) processes configured with a well-controlled plasma source at the center base of a vacuum chamber, which accommodates two independent e-gun sources, is used to deposition TiO2MgF2 and TiO2-SiO2 composite films of selected component ratios. Films prepared by this technology are found durable, uniform, and nonabsorbing in visible and near-IR regions. Single- and multilayer antireflection coatings with refractive index from 1.38 to 2.36 at (lambda) equals 550 nm are presented. Methods of enhancement in optical performance of these coatings are studied. The advantages of AR coatings formed by TiO2-MgF2 composite films over those similar systems consisting of TiO2-SiO2 composite films in both visible and near-IR regions are also presented.

  7. Construction and properties of a two-circuit plasma beam source for the direct plasma beam deposition on hard-material layers and its application at the example of cubic boron nitride

    CERN Document Server

    Haag, M

    2003-01-01

    In the present work a two-circuit plasma beam source for the direct plasma beam deposition of highly insulating thin films was developed and tested using the technologically very interesting system boron nitride as an example. In the utilized source a nitrogen plasma is excited electrodeless via electron cyclotron wave resonance (ECWR). The source plasma is superimposed by a second radio frequency circuit capacitively coupled and operated at variable frequency (v sub c sub a sub p =5..125Mhz) - the so-called extraction circuit. This circuit consists of a coupling electrode carrying a sputter target made from hexagonal boron nitride and a grounded substrate holder. By the self-bias potential between plasma and coupling electrode plasma ions are accelerated towards the target. They sputter the target and thus provide the boron component for the desired film growth. The corresponding self-bias potential on the substrate side ensures the ion bombardment of the film growing on the substrate. The incident ion beam ...

  8. Coating of TiO 2 photocatalysts on super-hydrophobic porous teflon membrane by an ion assisted deposition method and their self-cleaning performance

    Science.gov (United States)

    Yamashita, H.; Nakao, H.; Takeuchi, M.; Nakatani, Y.; Anpo, M.

    2003-05-01

    By means of an ion assisted deposition method, a TiO 2 photocatalyst was prepared at relatively lower temperature on porous Teflon sheets (PTS) that are good candidates for the coating materials with super-hydrophobic surfaces. UV light irradiation of TiO 2 photocatalyst on PTS led to the photocatalytic degradation of organic pollutants (self-cleaning), which wear off the water-repellent property of the original PTS surface. The PTS surface loading of a small amount of TiO 2 photocatalyst can keep the super-hydrophobic properties of PTS for a long time because of the photocatalytic degradation of the accumulated pollutants.

  9. Effect of surfactants on the morphology of FeSe films fabricated from a single source precursor by aerosol assisted chemical vapour deposition

    Indian Academy of Sciences (India)

    Raja Azadar Hussain; Amin Badshah; Naghma Haider; Malik Dilshad Khan; Bhajan Lal

    2015-03-01

    This article presents the fabrication of FeSe thin films from a single source precursor namely (1-(2-fluorobenzoyl)-3-(4-ferrocenyl-3-methylphenyl)selenourea (MeP2F)) by aerosol assisted chemical vapour deposition (AACVD). All the films were prepared via similar experimental conditions (temperature, flow rate, concentration, solvent system and reactor type) except the use of three different concentrations of two different surfactants i.e., triton and span. Seven thin films were characterized with PXRD, SEM, AFM, EDS and EDS mapping. The mechanism of the interaction of surfactant with MeP2F was determined with cyclic voltammetry (CV) and UV-Vis spectroscopy.

  10. Influence of oxygen flow rate on properties of indium tin oxide thin films prepared by ion-assisted electron beam evaporation

    Directory of Open Access Journals (Sweden)

    Artorn Pokaipisit

    2009-11-01

    Full Text Available Indium tin oxide (ITO thin films with various oxygen flow rates were deposited onto glass substrates by ion-assistedelectron beam evaporation. All other deposition parameters were kept constant. The electrical and optical properties of theITO thin films have been investigated as a function of oxygen flow rate. Optical transmittance and optical band gap energy were measured by spectrophotometer. Sheet resistance was measured by four-point probe method. It has been found that an oxygen flow rate at 12 sccm was suitable for improving the properties of ITO thin films. The resistivity and optical transmittance of ITO thin films were 7.210-4 -cm and 84%, respectively. The optical band gap was 4.19 eV.

  11. Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Mengdi, E-mail: M.Yang@utwente.nl; Aarnink, Antonius A. I.; Kovalgin, Alexey Y.; Gravesteijn, Dirk J.; Wolters, Rob A. M.; Schmitz, Jurriaan [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2016-01-15

    In this work, the authors developed hot-wire assisted atomic layer deposition (HWALD) to deposit tungsten (W) with a tungsten filament heated up to 1700–2000 °C. Atomic hydrogen (at-H) was generated by dissociation of molecular hydrogen (H{sub 2}), which reacted with WF{sub 6} at the substrate to deposit W. The growth behavior was monitored in real time by an in situ spectroscopic ellipsometer. In this work, the authors compare samples with tungsten grown by either HWALD or chemical vapor deposition (CVD) in terms of growth kinetics and properties. For CVD, the samples were made in a mixture of WF{sub 6} and molecular or atomic hydrogen. Resistivity of the WF{sub 6}-H{sub 2} CVD layers was 20 μΩ·cm, whereas for the WF{sub 6}-at-H-CVD layers, it was 28 μΩ·cm. Interestingly, the resistivity was as high as 100 μΩ·cm for the HWALD films, although the tungsten films were 99% pure according to x-ray photoelectron spectroscopy. X-ray diffraction reveals that the HWALD W was crystallized as β-W, whereas both CVD films were in the α-W phase.

  12. Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO{sub 2} thin films deposited by electron beam evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Mohanty, P. [School of Materials Science and Technology, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Kabiraj, D. [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067 (India); Mandal, R.K. [Department of Metallurgical Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Kulriya, P.K. [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067 (India); Sinha, A.S.K. [Department of Chemical Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Rath, Chandana, E-mail: chandanarath@yahoo.com [School of Materials Science and Technology, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India)

    2014-04-15

    TiO{sub 2} thin films deposited by electron beam evaporation technique annealed in either O{sub 2} or Ar atmosphere showed ferromagnetism at room temperature. The pristine amorphous film demonstrates anatase phase after annealing under Ar/O{sub 2} atmosphere. While the pristine film shows a super-paramagnetic behavior, both O{sub 2} and Ar annealed films display hysteresis at 300 K. X-ray photo emission spectroscopy (XPS), Raman spectroscopy, Rutherford’s backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) were used to refute the possible role of impurities/contaminants in magnetic properties of the films. The saturation magnetization of the O{sub 2} annealed film is found to be higher than the Ar annealed one. It is revealed from shifting of O 1s and Ti 2p core level spectra as well as from the enhancement of high binding energy component of O 1s spectra that the higher magnetic moment is associated with higher oxygen vacancies. In addition, O{sub 2} annealed film demonstrates better crystallinity, uniform deposition and smoother surface than that of the Ar annealed one from glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM). We conclude that although ferromagnetism is due to oxygen vacancies, the higher magnetization in O{sub 2} annealed film could be due to crystallinity, which has been observed earlier in Co doped TiO{sub 2} film deposited by pulsed laser deposition (Mohanty et al., 2012 [10]). - Highlights: • TiO{sub 2} films were deposited by e-beam evaporation technique and post annealed under O{sub 2}/Ar at 500 °C. • The pristine film shows SPM behavior where as O{sub 2} and Ar annealed films demonstrate RTFM. • The presence of magnetic impurities has been discarded by various characterization techniques. • The magnetic moment is found to be higher in O{sub 2} annealed film than the Ar annealed one. • The higher M{sub s} in O{sub 2

  13. Surface morphological and photoelectrochemical studies of ZnS thin films developed from single source precursors by aerosol assisted chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ehsan, Muhammad Ali [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Peiris, T.A. Nirmal; Wijayantha, K.G. Upul [Department of Chemistry, Loughborough University, Loughborough, LE11 3TU (United Kingdom); Khaledi, Hamid [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Ming, Huang Nay [Faculty of Science, Department of Physics, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Misran, Misni; Arifin, Zainudin [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Mazhar, Muhammad, E-mail: mazhar42pk@yahoo.com [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia)

    2013-07-01

    Zinc sulphide (ZnS) thin films have been deposited on fluorine-doped tin oxide-coated conducting glass substrates at 375, 425 and 475 °C temperatures from single source adduct precursors [Zn(S{sub 2}CNCy{sub 2}){sub 2}(py)] (1) [where, Cy = cyclohexyl, py = pyridine] and [Zn{S_2CN(CH_2Ph)(Me)}{sub 2}(py)] (2) [where, Ph = Phenyl, Me = Methyl] using aerosol assisted chemical vapour deposition (AACVD). The precursor complexes have been characterized by microanalysis, infrared spectroscopy, proton nuclear magnetic resonance spectroscopy, X-ray single crystal and thermogravimetric analysis. Thermal analysis showed that both precursors (1) and (2) undergo thermal decomposition at 375 °C to produce ZnS residues. The deposited ZnS films have been characterized by X-ray diffraction and energy dispersive X-ray spectroscopy. Scanning electron microscopic studies indicated that the surface morphology of ZnS films strongly depends on the nature of the precursor and the deposition temperature, regardless of marginal variation in thermal stability of the precursors. Direct band gap energies of 3.36 and 3.40 eV have been estimated from the ultraviolet–visible spectroscopy for the ZnS films fabricated from precursors (1) and (2), respectively. The current–voltage characteristics recorded under air mass 1.5 illumination confirmed that the deposited ZnS thin films are photoactive under anodic bias conditions. Furthermore, the photoelectrochemical (PEC) results indicate that these synthesised single source precursors are suitable for obtaining ZnS thin films by AACVD method. The ZnS thin film electrode prepared in this study are very promising for solar energy conversion and optoelectronic applications. The PEC properties of ZnS electrodes prepared from (2) are superior to that of the ZnS electrode prepared from precursor (1). - Highlights: • Synthesis and characterization of zinc dithiocarbamate pyridine adducts. • ZnS photo electrodes have been fabricated using aerosol-assisted

  14. Microstructural analysis and Transport Properties of MoO and MoC nanostructures prepared by focused electron beam-induced deposition

    Science.gov (United States)

    Makise, Kazumasa; Mitsuishi, Kazutaka; Shimojo, Masayuki; Shinozaki, Bunju

    2014-07-01

    By electron-beam-induced deposition, we have succeeded in the direct fabrication of nanowires of molybdenum oxide (MoOx) and molybdenum carbide (MoC) on a SiO2 substrate set in a scanning electron microscope. In order to prepare MoOx specimens of high purity, a precursor gas of molybdenum hexacarbonyl [Mo(CO)6] is used, mixed with oxygen gas. On the other hand, MoC is grown by mixing H2O gas with the precursor gas. The electrical transport properties of the nanowires are investigated by the DC four-terminal method. A highly resistive MoOx nanowire prepared from an as-deposited specimen by annealing in air shows nonlinear current-voltage characteristics and a high photoconductivity. The resistivity ρ of an as-deposited amorphous MoC (a-MoC) nanowire takes its maximum at a temperature T ~ 10 K and decreases to ~ 0 with decreasing temperature. This behavior of ρ(T) indicates the possible occurrence of superconductivity in a-MoC nanowires. The characteristic of ρ(T) below the superconducting transition temperature Tc ~ 4 K can be well explained by the quantum phase-slip model with a coherence length ξ(0) ~ 8 nm at T = 0.

  15. Electron Induced Surface Reactions of cis-Pt(CO)2Cl2: A Route to Focused Electron Beam Induced Deposition of Pure Pt Nanostructures.

    Science.gov (United States)

    Spencer, Julie A; Wu, Yung-Chien; McElwee-White, Lisa; Fairbrother, D Howard

    2016-07-27

    Using mechanistic data from surface science studies on electron-induced reactions of organometallic precursors, cis-Pt(CO)2Cl2 (1) was designed specifically for use in focused electron beam induced deposition (FEBID) of Pt nanostructures. Electron induced decomposition of adsorbed 1 under ultrahigh vacuum (UHV) conditions proceeds through initial CO loss as determined by in situ X-ray photoelectron spectroscopy and mass spectrometry. Although the Pt-Cl bonds remain intact during the initial decomposition step, larger electron doses induce removal of the residual chloride through an electron-stimulated desorption process. FEBID structures created from cis-Pt(CO)2Cl2 under steady state deposition conditions in an Auger spectrometer were determined to be PtCl2, free of carbon and oxygen. Coupled with the electron stimulated removal of chlorine demonstrated in the UHV experiments, the Auger deposition data establish a route to FEBID of pure Pt. Results from this study demonstrate that structure-activity relationships can be used to design new precursors specifically for FEBID.

  16. Effect of titanium incorporation on the structural, mechanical and biocompatible properties of DLC thin films prepared by reactive-biased target ion beam deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Bharathy, P. Vijai [Thin Films and Nanomaterials Lab, School of Physical Sciences, Bharathiar University, Coimbatore 641046 (India); Department of Mechanical Engineering, University of Saskatchewan, Saskatoon (Canada); Nataraj, D., E-mail: de.natraj@gmail.com [Thin Films and Nanomaterials Lab, School of Physical Sciences, Bharathiar University, Coimbatore 641046 (India); Chu, Paul K.; Wang, Huaiyu [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong); Yang, Q. [Department of Mechanical Engineering, University of Saskatchewan, Saskatoon (Canada); Kiran, M.S.R.N. [School of Physics, University of Hyderabad, Hyderabad, Andra Pradesh (India); Silvestre-Albero, J. [Laboratorio de Materiales Avanzados, Departmento de Quimica Inorganica, Universidad de Alicante, Ap 99, E-03080 Alicante (Spain); Mangalaraj, D. [Thin Films and Nanomaterials Lab, School of Physical Sciences, Bharathiar University, Coimbatore 641046 (India)

    2010-10-15

    Amorphous diamond like carbon (DLC) and titanium incorporated diamond like carbon (Ti-DLC) thin films were deposited by using reactive-biased target ion beam deposition method. The effects of Ti incorporation and target bias voltage on the microstructure and mechanical properties of the as-deposited films were investigated by means of X-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy and nano-indentation. It was found that the Ti content in Ti-DLC films gets increased with increasing target bias voltage. At about 4.2 at.% of Ti, uniform sized well dispersed nanocrystals were seen in the DLC matrix. Using FFT analysis, a facility available in the TEM, it was found that the nanocrystals are in cubic TiC phase. Though at the core, the incorporated Ti atoms react with carbon to form cubic TiC; most of the surface exposed Ti atoms were found to react with the atmospheric oxygen to form weakly bonded Ti-O. The presence of TiC nanocrystals greatly modified the sp{sup 3}/sp{sup 2} hybridized bonding ratio and is reflected in mechanical hardness of Ti-DLC films. These films were then tested for their biocompatibility by an invitro cell culturing test. Morphological observation and the cell proliferation test have demonstrated that the human osteoblast cells well attach and proliferate on the surface of Ti incorporated DLC films, suggesting possible applications in bone related implant coatings.

  17. Characterization of AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin films deposited by electron-beam technique

    Energy Technology Data Exchange (ETDEWEB)

    Karaagac, H; Parlak, M [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey); Kaleli, M, E-mail: parlak@metu.edu.t [Department of Physics, Sueleyman Demirel University, 32260 Isparta (Turkey)

    2009-08-21

    AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin films were deposited onto a quartz substrate by the electron-beam technique. For the investigation of the annealing effect on structural, optical and electrical properties of deposited films, samples were annealed in the temperature range 300-775 {sup 0}C. The composition analyses of the deposited films carried out by energy dispersive x-ray analysis measurements have shown that the deposited AgGa{sub 0.5}In{sub 0.5}Se{sub 2} films were indium- and gallium-rich but selenium- and slightly silver-deficient and there was a remarkable change in composition with annealing. As a result of x-ray diffraction measurements, the as-deposited films were found to have an amorphous structure and after annealing at 300 {sup 0}C a polycrystalline structure with different phases was observed. However, subsequent annealing resulted in the formation of single phase AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin film at about 775 {sup 0}C. The absorption coefficient of the films was determined from the transmission spectra and the band gap values were calculated and found to vary between 1.57 and 2.43 eV following annealing in the temperature range 300-775 {sup 0}C. The refractive index (n) and extinction coefficient (k) of the films were evaluated by applying the envelope method to the transmission spectra. The spectral distributions of these quantities for both as-deposited and annealed films were determined in detail and it was observed that there has been a remarkable influence of annealing on these quantities. The electrical properties of AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin films were also investigated by means of temperature dependent conductivity measurements in the temperature range 100-460 K. The resistivity of the samples depending on the annealing temperature varied between 6.5 x 10{sup 5} and 16 {Omega} cm. As a result of the hot-probe method it was observed that the as-deposited films have indicated an n-type behaviour, while all the

  18. Molecular beam deposition of high-permittivity polydimethylsiloxane for nanometer-thin elastomer films in dielectric actuators

    DEFF Research Database (Denmark)

    M. Weiss, Florian; Madsen, Frederikke Bahrt; Töpper, Tino;

    2016-01-01

    To realize low-voltage dielectric elastomer actuators (DEAs) for artificial muscles, a high-permittivity elastomer and a related thin-film deposition technique must be selected. For polydimethylsiloxane, fillers or functionalized crosslinkers have been incorporated into the elastomer to improve...

  19. SAFT-assisted sound beam focusing using phased arrays (PA-SAFT) for non-destructive evaluation

    Science.gov (United States)

    Nanekar, Paritosh; Kumar, Anish; Jayakumar, T.

    2015-04-01

    Focusing of sound has always been a subject of interest in ultrasonic non-destructive evaluation. An integrated approach to sound beam focusing using phased array and synthetic aperture focusing technique (PA-SAFT) has been developed in the authors' laboratory. The approach involves SAFT processing on ultrasonic B-scan image collected by a linear array transducer using a divergent sound beam. The objective is to achieve sound beam focusing using fewer elements than the ones required using conventional phased array. The effectiveness of the approach is demonstrated on aluminium blocks with artificial flaws and steel plate samples with embedded volumetric weld flaws, such as slag and clustered porosities. The results obtained by the PA-SAFT approach are found to be comparable to those obtained by conventional phased array and full matrix capture - total focusing method approaches.

  20. Effects of Rapid Thermal Annealing on Optical Properties of GaInNAs/GaAs Single Quantum Well Grown by Plasma-Assisted Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The effects of Rapid Thermal Annealing (RTA) on the optical properties of GaInNAs/GaAs Single Quantum Well (SQW) grown by plasma-assisted molecular beam epitaxy are investigated. Ion removal magnets were applied to reduce the ion damage during the growth process and the optical properties of GaInNAs/GaAs SQW are remarkably improved.RTA was carried out at 650℃ and its effect was studied by the comparising the roomtemperature PhotoLuminescence (PL) spectra for the non ion-removed (grown without magnets) sample with for the ion-removed (grown with magnets) one. The more significant improvement of PL characteristics for non ion-removed GaInNAs/GaAs SQW after annealing (compared with those for ion-removed) indicates that the nonradiative centers removed by RTA at 650℃ are mainly originated from ion damage. After annealing the PL blue shift for non ionremoved GaInNAs/GaAs SQW is much larger than those for InGaAs/GaAs and ion-removed GaInNAs/GaAs SQW. It is found that the larger PL blue shift of GaInNAs/GaAs SQW is due to the defect-assisted In-Ga interdiffusion rather than defect-assisted N-As interdiffusion.

  1. Development and characterization of a layer by layer ultrasound assisted spray deposition process for thin polymer films

    Science.gov (United States)

    Balakrishnan, Anandh

    An Ultrasound assisted Atomization (UA) system has been developed and investigated to synthesize ˜20microm polyurethane thin films with uniform, repeatable thickness and microstructure. The UA system comprised a 20 kHz atomizer probe mounted on 750 W/cm2 transducer, a heated glass chamber and a rotating substrate. The rationale for the work has been built through a careful Design of Experiments (DoE) that sought to answer questions regarding the process-microstructure relationships from both the spray and material points of view. The independent variables chosen were the polymer solution weight percentage (0.2%, 2%, and 4%), power amplitude (energy) percentage supplied to the nozzle (23%, 29%, 37%, and 46%),the temperature of deposition (45°C, 80°C) and flow rate (50microL/min, 150microL/min). The research questions focused on influence of the process parameters on the microstructure and properties of the film. One of the problems involved fixing the trajectory of the spray and also making use of the droplet surfaces created by the spray. To achieve this, a simple air-draft attachment was devised and the influence of the same was evaluated through process and film characterization experiments. A mechanism for the draft has been schematically provided. The use of such a draft to fabricate thin polymer films via ultrasound atomization has not been achieved before and represents a 'first step' in advancing this ultrasound technology. The primary findings of the work were that the film microstructure and properties were heavily influenced by the flow rate, energy of atomization, and test temperature. In addition, the droplet diameters seemed to be readily amenable to change for the 0.2 and 2% solutions and the use of the air-draft made the process feasible, repeatable and accurate. For the 4% solutions, viscosity seemed to stabilize the liquid solution film at the tip requiring larger energies of atomization. In all, relative to the 0.2% films the fracture strengths

  2. 生物医用钛合金表面离子束辅助沉积氧化钛膜层%Titanium Oxide Layer on Biomedical Titanium Alloy Deposited by Ion Beam Enhanced Deposition

    Institute of Scientific and Technical Information of China (English)

    司红羚; 田林海; 李晓红; 付涛

    2005-01-01

    为改善钛合金(Ti6Al4V)的生物相容性,采用离子束辅助沉积(Ion beam enhanced deposition,IBED)技术制备了氧化钛膜层.结果表明:钛合金上的膜层涂覆均匀,基体的铝和钒元素已经探测不到,膜层为含氮和沿(111)面取向的TiO相;膜层划痕实验的临界载荷为16.8 N,膜层以塑性变形的方式破坏.

  3. Interface controlled growth of nanostructures in discontinuous Ag and Au thin films fabricated by ion beam sputter deposition for plasmonic applications

    Indian Academy of Sciences (India)

    R Brahma; M Ghanashyam Krishna

    2012-08-01

    The growth of discontinuous thin films of Ag and Au by low energy ion beam sputter deposition is reported. The study focuses on the role of the film–substrate in determining the shape and size of nanostructures achieved in such films. Ag films were deposited using Ar ion energy of 150 eV while the Au films were deposited with Ar ion energies of 250–450 eV. Three types of interfaces were investigated in this study. The first set of film–substrate interfaces consisted of Ag and Au films grown on borosilicate glass and carbon coated Cu grids used as substrates. The second set of films was metallic bilayers in which one of the metals (Ag or Au) was grown on a continuous film of the other metal (Au or Ag). The third set of interfaces comprised of discontinuous Ag and Au films deposited on different dielectrics such as SiO2, TiO2 and ZrO2. In each case, a rich variety of nanostructures including self organized arrays of nanoparticles, nanoclusters and nanoneedles have been achieved. The role of the film–substrate interface is discussed within the framework of existing theories of thin film nucleation and growth. Interfacial nanostructuring of thin films is demonstrated to be a viable technique to realize a variety of nanostructures. The use of interfacial nanostructuring for plasmonic applications is demonstrated. It is shown that the surface Plasmon resonance of the metal nanostructures can be tuned over a wide range of wavelengths from 400 to 700 nm by controlling the film–substrate interface.

  4. Influence of the voltage waveform during nanocomposite layer deposition by aerosol-assisted atmospheric pressure Townsend discharge

    Science.gov (United States)

    Profili, J.; Levasseur, O.; Naudé, N.; Chaneac, C.; Stafford, L.; Gherardi, N.

    2016-08-01

    This work examines the growth dynamics of TiO2-SiO2 nanocomposite coatings in plane-to-plane Dielectric Barrier Discharges (DBDs) at atmospheric pressure operated in a Townsend regime using nebulized TiO2 colloidal suspension in hexamethyldisiloxane as the growth precursors. For low-frequency (LF) sinusoidal voltages applied to the DBD cell, with voltage amplitudes lower than the one required for discharge breakdown, Scanning Electron Microscopy of silicon substrates placed on the bottom DBD electrode reveals significant deposition of TiO2 nanoparticles (NPs) close to the discharge entrance. On the other hand, at higher frequencies (HF), the number of TiO2 NPs deposited strongly decreases due to their "trapping" in the oscillating voltage and their transport along the gas flow lines. Based on these findings, a combined LF-HF voltage waveform is proposed and used to achieve significant and spatially uniform deposition of TiO2 NPs across the whole substrate surface. For higher voltage amplitudes, in the presence of hexamethyldisiloxane and nitrous oxide for plasma-enhanced chemical vapor deposition of inorganic layers, it is found that TiO2 NPs become fully embedded into a silica-like matrix. Similar Raman spectra are obtained for as-prepared TiO2 NPs and for nanocomposite TiO2-SiO2 coating, suggesting that plasma exposure does not significantly alter the crystalline structure of the TiO2 NPs injected into the discharge.

  5. Complexity of the microstructure evolution for optimization cBN growth in a four-step ion-assisted deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Wong, S.F. [Department of Applied Physics and Materials Research Centre, Hong Kong Polytechnic University, Kowloon, Hong Kong (China)]. E-mail: 96586087.sf@polyu.edu.hk; Ong, C.W. [Department of Applied Physics and Materials Research Centre, Hong Kong Polytechnic University, Kowloon, Hong Kong (China); Pang, G.K.H. [Department of Applied Physics and Materials Research Centre, Hong Kong Polytechnic University, Kowloon, Hong Kong (China); Li, Q. [Department of Physics, Chinese University of Hong Kong, Shatin, New Territory, Hong Kong (China); Lau, W.M. [Department of Physics, Chinese University of Hong Kong, Shatin, New Territory, Hong Kong (China)

    2005-10-01

    The changes in microstructure of a specially prepared boron nitride (BN) film as a function of film depth were studied by high resolution transmission electron microscopy (HRTEM) and other materials analysis tools. These changes were then correlated to the changes in processing parameters during film growth. The analyzed film was fabricated by the four-step ion-assisted deposition procedure known to be effective in film-stress engineering for the formation and retention of a thick cubic BN (cBN) layer with a three-step buffer-layer deposition. In this deposition, the energy of the ions assisting cBN formation was increased stepwise from 200 to 280, and then to 360 eV [S.F. Wong, C. W. Ong, G.K.H. Pang, K.Z. Baba-Kishi, W. M. Lau, J. Vac. Sci. Technol. A 22 (2004) 676]. The nominal thickness of the cBN layer was 650 nm and that for each of the three buffer layers was about 160 nm. Both the HRTEM and electron diffraction results confirmed that the top cBN layer, with a thickness of 643 nm, consisted of cBN grains with a preferred orientation of their c-axis along the film growth direction. In comparison, the three-step buffer layer deposition yielded complex and intriguing microstructures. In the first buffer layer adjacent to the substrate, grains containing sp{sup 2} planes with a preferred orientation of their basal planes parallel to the film growth direction were the main constituents. The increase of ion energy from 200 to 280 eV for the formation of the second buffer layer first led to an enrichment of the concentration of these sp{sup 2} grains with the preferred orientation. Then, bending of some of the sp{sup 2} planes into curved microstructures was evident. The microstructure became very complex and displayed multiple phases including some amorphous structures. The presence of a cBN-like phase was indeed detected by electron energy loss spectroscopy. This complex microstructure persisted until it was replaced by the cBN structure, without abrupt change

  6. Thin films of thermoelectric compound Mg{sub 2}Sn deposited by co-sputtering assisted by multi-dipolar microwave plasma

    Energy Technology Data Exchange (ETDEWEB)

    Le-Quoc, H., E-mail: huy.le-quoc@lpsc.in2p3.fr [Laboratoire de Physique Subatomique et de Cosmologie - CNRS/UJF/Grenoble INP, 53 rue des Martyrs, 38026 Grenoble, Cedex (France); Institut Neel, CNRS, BP 166, F-38042, Grenoble, Cedex 9 (France); Lacoste, A., E-mail: ana.lacoste@ujf-grenoble.fr [Laboratoire de Physique Subatomique et de Cosmologie - CNRS/UJF/Grenoble INP, 53 rue des Martyrs, 38026 Grenoble, Cedex (France); Hlil, E.K. [Institut Neel, CNRS, BP 166, F-38042, Grenoble, Cedex 9 (France); Bes, A.; Vinh, T. Tan [Laboratoire de Physique Subatomique et de Cosmologie - CNRS/UJF/Grenoble INP, 53 rue des Martyrs, 38026 Grenoble, Cedex (France); Fruchart, D. [Institut Neel, CNRS, BP 166, F-38042, Grenoble, Cedex 9 (France); Skryabina, N. [Department of Physics, Perm State University, 614990 Perm (Russian Federation)

    2011-10-13

    Highlights: > Mg{sub 2}Sn thin films deposited by plasma co-sputtering, on silicon and glass substrates. > Formation of nano-grained polycrystalline films on substrates at room temperature. > Structural properties vary with target biasing and target-substrate distance. > Formation of the hexagonal phase of Mg{sub 2}Sn in certain deposition conditions. > Power factor {approx}5.0 x 10{sup -3} W K{sup -2} m{sup -1} for stoichiometric Mg{sub 2}Sn films doped with {approx}1 at.% Ag. - Abstract: Magnesium stannide (Mg{sub 2}Sn) thin films doped with Ag intended for thermoelectric applications are deposited on both silicon and glass substrates at room temperature by plasma assisted co-sputtering. Characterization by scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction confirms the formation of fine-grained polycrystalline thin films with thickness of 1-3 {mu}m. Stoichiometry, microstructure and crystal structure of thin films are found to vary with target biasing and the distance from targets to substrate. Measurements of electrical resistivity and Seebeck coefficient at room temperature show the maximum power factor of {approx}5.0 x 10{sup -3} W K{sup -2} m{sup -1} for stoichiometric Mg{sub 2}Sn thin films doped with {approx}1 at.% Ag.

  7. The effects of the forward speed and air volume of an air-assisted sprayer on spray deposition in tendone trained vineyards

    Directory of Open Access Journals (Sweden)

    Simone Pascuzzi

    2013-12-01

    Full Text Available This paper reports the results of spray application trials in a tendone trained vineyard in order to evaluate the influence of forward speed and air volume on the foliar deposition of plant protection products (PPPs, maintaining roughly constant the volume applied. The trials used an air-assisted sprayer with a centrifugal fan and 4+4 adjustable fan-shaped diffusers, each with a nozzle-holder group. A full factorial experimental design was implemented, with three forward speeds and two airflow rates, organised with a randomised complete block design including three replicates. In order to consider the influence of canopy development, the tests (one spray application for each replicate of a mixture containing a water-soluble food dye as a tracer were replicated during two phenological stages: i the end of flowering; and ii berry touch. Leaves were picked at random from the canopy after each spray treatment, and foliar PPP deposition was evaluated using a spectrophotometer. This analysis of foliar deposition showed that the airflow rates produced by the fan were unsuitable for the dense canopy typical of this type of vineyard. However, the special shape of the diffusers may make this sprayer effective if the main objective of pesticide applications in tendone trained table grape vineyards is to control bunch diseases.

  8. Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory

    Science.gov (United States)

    Qian, Shi-Bing; Wang, Yong-Ping; Shao, Yan; Liu, Wen-Jun; Ding, Shi-Jin

    2017-02-01

    For the first time, the growth of Ni nanoparticles (NPs) was explored by plasma-assisted atomic layer deposition (ALD) technique using NiCp2 and NH3 precursors. Influences of substrate temperature and deposition cycles on ALD Ni NPs were studied by field emission scanning electron microscope and X-ray photoelectron spectroscopy. By optimizing the process parameters, high-density and uniform Ni NPs were achieved in the case of 280 °C substrate temperature and 50 deposition cycles, exhibiting a density of 1.5 × 1012 cm-2 and a small size of 3 4 nm. Further, the above Ni NPs were used as charge storage medium of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) memory, demonstrating a high storage capacity for electrons. In particular, the nonvolatile memory exhibited an excellent programming characteristic, e.g., a large threshold voltage shift of 8.03 V was obtained after being programmed at 17 V for 5 ms.

  9. Stepwise mechanism and H2O-assisted hydrolysis in atomic layer deposition of SiO2 without a catalyst.

    Science.gov (United States)

    Fang, Guo-Yong; Xu, Li-Na; Wang, Lai-Guo; Cao, Yan-Qiang; Wu, Di; Li, Ai-Dong

    2015-01-01

    Atomic layer deposition (ALD) is a powerful deposition technique for constructing uniform, conformal, and ultrathin films in microelectronics, photovoltaics, catalysis, energy storage, and conversion. The possible pathways for silicon dioxide (SiO2) ALD using silicon tetrachloride (SiCl4) and water (H2O) without a catalyst have been investigated by means of density functional theory calculations. The results show that the SiCl4 half-reaction is a rate-determining step of SiO2 ALD. It may proceed through a stepwise pathway, first forming a Si-O bond and then breaking Si-Cl/O-H bonds and forming a H-Cl bond. The H2O half-reaction may undergo hydrolysis and condensation processes, which are similar to conventional SiO2 chemical vapor deposition (CVD). In the H2O half-reaction, there are massive H2O molecules adsorbed on the surface, which can result in H2O-assisted hydrolysis of the Cl-terminated surface and accelerate the H2O half-reaction. These findings may be used to improve methods for the preparation of SiO2 ALD and H2O-based ALD of other oxides, such as Al2O3, TiO2, ZrO2, and HfO2.

  10. Structural characteristics of copper/hydrogenated amorphous carbon composite films prepared by microwave plasma-assisted deposition processes from methane-argon and acetylene-argon gas mixtures

    Energy Technology Data Exchange (ETDEWEB)

    Thiery, F.; Pauleau, Y.; Grob, J.J.; Babonneau, D

    2004-11-01

    Copper/hydrogenated amorphous carbon (Cu/a-C:H) composite films have been deposited on silicon substrates by a hybrid technique combining microwave plasma-assisted chemical vapor deposition and sputter-deposition from methane-argon and acetylene-argon gas mixtures. The major objective of this work was to investigate the effect of the carbon gas precursor on the structural characteristics of Cu/a-C:H composite films deposited at ambient temperature. The major characteristics of CH{sub 4}-argon and C{sub 2}H{sub 2}-argon plasmas were analyzed by Langmuir probe measurements. The composition of films was determined by Rutherford backscattering spectroscopy, energy recoil detection analyses and nuclear reaction analyses. The carbon content in the films was observed to vary in the range 20-77 at.% and 7.5-99 at.% as the CH{sub 4} and C{sub 2}H{sub 2} concentrations in the gas phase increased from 10 to 100%, respectively. The atom number ratio H/C in the films was scattered approximately 0.4 whatever the carbon gas precursor used. The crystallographic structure and the size of copper crystallites incorporated in the a-C were determined by X-ray diffraction techniques. The copper crystallite size decreased from 20 nm in pure copper films to less than 5 nm in Cu/a-C:H films containing more than 40 at.% of carbon. Grazing incidence small angle X-ray scattering measurements were performed to investigate the size distribution and distance of copper crystallites as functions of the deposition parameters. The structural characteristics of copper crystallites were dependent on the hydrocarbon gas precursor used. The crystallite size and the width of the size distribution were homogeneous in films deposited from CH{sub 4}. Copper crystallites with an anisotropic shape were found in films deposited from C{sub 2}H{sub 2}. The major radicals formed in the plasma and condensed on the surface of growing films, namely CH and C{sub 2}H radicals for films produced from CH{sub 4} and C

  11. Efficient upconversion polymer-inorganic nanocomposite thin film emitters prepared by the double beam matrix assisted pulsed laser evaporation (DB-MAPLE)

    Science.gov (United States)

    Darwish, Abdalla M.; Burkett, Allan; Blackwell, Ashley; Taylor, Keylantra; Walker, Vernell; Sarkisov, Sergey; Koplitz, Brent

    2014-09-01

    We report on fabrication and investigation of optical and morphological properties of highly efficient (a quantum yield of 1%) upconversion polymer-inorganic nanocomposite thin film emitters prepared by the new technique of double beam matrix assisted pulsed laser evaporation (DB-MAPLE). Polymer poly(methyl methacrylate) (PMMA) host was evaporated on a silicon substrate using a 1064-nm pulsed laser beam using a target made of frozen (to the temperature of liquid nitrogen) solution of PMMA in chlorobenzene. Concurrently, the second 532-nm pulsed beam from the same laser was used to impregnate the polymer host with the inorganic nanoparticulate made of the rare earth upconversion compounds NaYF4: Yb3+, Er3+, NaYF4: Yb3+, Ho3+, and NaYF4: Yb3+, Tm3+. The compounds were initially synthesized using the wet process, baked, and compressed in solid pellet targets. The proposed DB-MAPLE method has the advantage of making highly homogeneous nanocomposite films with precise control of the doping rate due to the optimized overlapping of the plumes produced by the ablation of the organic and inorganic target with the infrared and visible laser beams respectively. X-ray diffraction, electron and atomic force microscopy, and optical fluorescence spectroscopy indicated that the inorganic nanoparticulate preserved its crystalline structure and upconversion properties (strong emission in green, red, and blue bands upon illumination with 980-nm laser diode) after being transferred from the target in the polymer nanocomposite film. The produced films can be used in applications varying from the efficiency enhancement of the photovoltaic cells, optical sensors and biomarkers to anti-counterfeit labels.

  12. Superconducting YBa sub 2 Cu sub 3 O sub 7 thin films grown in-situ by ion beam CO-deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kellett, B.K.; James, J.H.; Gauzzi, A.; Dwir, B.; Pavuna, D. (Inst. of Micro and Optoelectronics, Dept. of Physics, Federal Inst. of Tech., Lausanne (Switzerland))

    1989-12-01

    Superconducting YBCO thin films have been grown in-situ by three ion beam co-deposition sputtering. Both metal and oxide targets of Cu and Y and BaF{sub 2} and BaCO{sub 3} targets have been investigated. Film composition was determined by RBS and AES analysis. Films grown using BaF{sub 2} show fluorine contamination, whereas the carbon concentration in films grown using BaCO{sub 3} is beneath the Auger detection limit. Superconducting films have been grown on SrTiO{sub 3} (T{sub co}=78K) and on Si with SiO{sub 2} or Y{sub 2}O{sub 3} buffer layers (T{sub co}=35K). (orig.).

  13. Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition

    Science.gov (United States)

    Browne, David A.; Fireman, Micha N.; Mazumder, Baishakhi; Kuritzky, Leah Y.; Wu, Yuh-Renn; Speck, James S.

    2017-02-01

    The results of vertical transport through AlGaN heterobarriers are presented for ammonia molecular beam epitaxy (NH3-MBE) on c-plane GaN on sapphire templates and on m-plane bulk GaN substrates, as well as by metalorganic chemical vapor deposition (MOCVD) on m-plane bulk GaN substrates. Experiments were performed to determine the role of the AlGaN alloy as an effective barrier to vertical transport, which is an essential component of both optoelectronic and power electronic devices. The alloy composition, thickness, and doping levels of the AlGaN layers, as well as substrate orientation, were systematically varied to examine their influence on electron transport. Atom probe tomography (APT) was used to directly determine the alloy composition at the atomic scale to reveal the presence of random alloy fluctuations which provides insight into the nature of the observed transport.

  14. Study of effect annealing temperature on the structure, morphology and photocatalytic activity of Si doped TiO{sub 2} thin films deposited by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Lu Zhongdan [Key Lab of Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Xiaolingwei 200, Nanjing 210094 (China); Jiang Xiaohong, E-mail: jiangxh24@mail.njust.edu.cn [Key Lab of Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Xiaolingwei 200, Nanjing 210094 (China); Zhou Bing; Wu Xiaodong; Lu Lude [Key Lab of Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Xiaolingwei 200, Nanjing 210094 (China)

    2011-10-01

    Transparent Si-doped TiO{sub 2} thin films (Si-TiO{sub 2}) were deposited on quartz glasses using electron beam evaporation (EBE) and annealed at different temperature in an air atmosphere. The structure and morphology of these films were analyzed by X-ray diffraction (XRD), Raman microscopy (Raman), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Meanwhile the photocatalytic activity of the films has also been evaluated on the basis of the degradation degree of rhodamine B in aqueous solution. Our experimental results suggest that the annealing temperature impact a strong effect on the structure, morphology and photocatalytic activity of Si-TiO{sub 2} thin films. Furthermore the enhanced thermal stability of Si-TiO{sub 2} films enabled them to elevate the phase transformation temperature of TiO{sub 2} from anatase to rutile and enhanced the photocatalytic efficiency.

  15. Growth of thick La{sub 2}Zr{sub 2}O{sub 7} buffer layers for coated conductors by polymer-assisted chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xin, E-mail: xzhang@my.swjtu.edu.cn [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Yong, E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Xia, Yudong [State Key Lab of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Guo, Chunsheng [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Zhang, Yong [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhang, Han [Department of Physics, Peking University, Beijing 100871 (China)

    2015-06-15

    Highlights: • We develops a low-cost and high-efficient technology of fabricating LZO buffer layers. • Sufficient thickness LZO buffer layers have been obtained on NiW (2 0 0) alloy substrate. • Highly biaxially textured YBCO thin film has been deposited on LZO/NiW. - Abstract: La{sub 2}Zr{sub 2}O{sub 7} (LZO) epitaxial films have been deposited on LaAlO{sub 3} (LAO) (1 0 0) single-crystal surface and bi-axially textured NiW (2 0 0) alloy substrate by polymer-assisted chemical solution deposition, and afterwards studied with XRD, SEM and AFM approaches. Highly in-plane and out-of-plane oriented, dense, smooth, crack free and with a sufficient thickness (>240 nm) LZO buffer layers have been obtained on LAO (1 0 0) single-crystal surface; The films deposited on NiW (2 0 0) alloy substrate are also found with high degree in-plane and out-of-plane texturing, good density with pin-hole-free, micro-crack-free nature and a thickness of 300 nm. Highly epitaxial 500 nm thick YBa{sub 2}Cu{sub 3}O{sub 7−x} (YBCO) thin film exhibits the self-field critical current density (Jc) reached 1.3 MA/cm{sup 2} at 77 K .These results demonstrate the LZO epi-films obtained with current techniques have potential to be a buffer layer for REBCO coated conductors.

  16. Structural, nanomechanical and variable range hopping conduction behavior of nanocrystalline carbon thin films deposited by the ambient environment assisted filtered cathodic jet carbon arc technique

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Rawal, Ishpal; Tripathi, R.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Srivastava, A.K. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Kumar, Mahesh [Ultrafast Opto-Electronics and Tetrahertz Photonics Group, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India)

    2015-04-15

    Highlights: • Nanocrystalline carbon thin films are grown by filtered cathodic jet carbon arc process. • Effect of gaseous environment on the properties of carbon films has been studied. • The structural and nanomechanical properties of carbon thin films have been studied. • The VRH conduction behavior in nanocrystalline carbon thin films has been studied. - Abstract: This paper reports the deposition and characterization of nanocrystalline carbon thin films by filtered cathodic jet carbon arc technique assisted with three different gaseous environments of helium, nitrogen and hydrogen. All the films are nanocrystalline in nature as observed from the high resolution transmission electron microscopic (HRTEM) measurements, which suggests that the nanocrystallites of size ∼10–50 nm are embedded though out the amorphous matrix. X-ray photoelectron spectroscopic studies suggest that the film deposited under the nitrogen gaseous environment has the highest sp{sup 3}/sp{sup 2} ratio accompanied with the highest hardness of ∼18.34 GPa observed from the nanoindentation technique. The film deposited under the helium gaseous environment has the highest ratio of the area under the Raman D peak to G peak (A{sub D}/A{sub G}) and the highest conductivity (∼2.23 S/cm) at room temperature, whereas, the film deposited under the hydrogen environment has the lowest conductivity value (2.27 × 10{sup −7} S/cm). The temperature dependent dc conduction behavior of all the nanocrystalline carbon thin films has been analyzed in the light of Mott’s variable range hopping (VRH) conduction mechanism and observed that all the films obey three dimension VRH conduction mechanism for the charge transport.

  17. Investigation of the mechanism of impurity assisted nanoripple formation on Si induced by low energy ion beam erosion

    Energy Technology Data Exchange (ETDEWEB)

    Koyiloth Vayalil, Sarathlal, E-mail: sarathlal.koyilothvayalil@desy.de [Photon Science, DESY, Notkestr. 85, D-22607 Hamburg (Germany); UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India); Gupta, Ajay [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201313 (India); Roth, Stephan V. [Photon Science, DESY, Notkestr. 85, D-22607 Hamburg (Germany); Ganesan, V. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India)

    2015-01-14

    A detailed mechanism of the nanoripple pattern formation on Si substrates generated by the simultaneous incorporation of pure Fe impurities at low energy (1 keV) ion beam erosion has been studied. To understand and clarify the mechanism of the pattern formation, a comparative analysis of the samples prepared for various ion fluence values using two complimentary methods for nanostructure analysis, atomic force microscopy, and grazing incidence small angle x-ray scattering has been done. We observed that phase separation of the metal silicide formed during the erosion does not precede the ripple formation. It rather concurrently develops along with the ripple structure. Our work is able to differentiate among various models existing in the literature and provides an insight into the mechanism of pattern formation under ion beam erosion with impurity incorporation.

  18. Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices.

    Science.gov (United States)

    Jiao, Yuqing; Pello, Josselin; Mejia, Alonso Millan; Shen, Longfei; Smalbrugge, Barry; Geluk, Erik Jan; Smit, Meint; van der Tol, Jos

    2014-03-15

    In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C60 fullerene. The addition of C60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3  dB/cm has been demonstrated.

  19. Detailed subsurface damage measurement and efficient damage-free fabrication of fused silica optics assisted by ion beam sputtering.

    Science.gov (United States)

    Liao, Wenlin; Dai, Yifan; Liu, Zongzheng; Xie, Xuhui; Nie, Xuqing; Xu, Mingjin

    2016-02-22

    Formation of subsurface damage has an inseparable relationship with microscopic material behaviors. In this work, our research results indicate that the formation process of subsurface damage often accompanies with the local densification effect of fused silica material, which seriously influences microscopic material properties. Interestingly, we find ion beam sputtering (IBS) is very sensitive to the local densification, and this microscopic phenomenon makes IBS as a promising technique for the detection of nanoscale subsurface damages. Additionally, to control the densification effect and subsurface damage during the fabrication of high-performance optical components, a combined polishing technology integrating chemical-mechanical polishing (CMP) and ion beam figuring (IBF) is proposed. With this combined technology, fused silica without subsurface damage is obtained through the final experimental investigation, which demonstrates the feasibility of our proposed method.

  20. Growth direction of oblique angle electron beam deposited silicon monoxide thin films identified by optical second-harmonic generation

    Energy Technology Data Exchange (ETDEWEB)

    Vejling Andersen, Søren; Lund Trolle, Mads; Pedersen, Kjeld [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg Øst (Denmark)

    2013-12-02

    Oblique angle deposited (OAD) silicon monoxide (SiO) thin films forming tilted columnar structures have been characterized by second-harmonic generation. It was found that OAD SiO leads to a rotationally anisotropic second-harmonic response, depending on the optical angle of incidence. A model for the observed dependence of the second-harmonic signal on optical angle of incidence allows extraction of the growth direction of OAD films. The optically determined growth directions show convincing agreement with cross-sectional scanning electron microscopy images. In addition to a powerful characterization tool, these results demonstrate the possibilities for designing nonlinear optical devices through SiO OAD.

  1. Ion beam sputter deposition of low-defect EUV mask blanks on 6-in. LTEM substrates in a real production environment

    Science.gov (United States)

    Becker, Hans W.; Aschke, Lutz; Schubert, Birgit; Krieger, Juergen; Lenzen, Frank; Yulin, Sergey A.; Feigl, Torsten; Kuhlmann, Thomas; Kaiser, Norbert

    2002-07-01

    EUV mask blanks consist of two thin film systems deposited on low thermal expansion 6 inch substrates (LTEM). First there is the multilayer stack with around 100 alternating layers of elements with different optical properties which are topped by a capping layer. Beside optimal optical properties it is also necessary to improve the heat stability of the layer system. The absorber stack which consists of a buffer and an absorber layer is next. Here a minimum absorption of EUV light of 99 percent is required. The stress in both layer systems should be as low as possible. The reduction of defects to an absolute minimum is one of the main challenges. The high-reflective Mo/Si multilayer coatings were designed for normal incidence reflectivity and successfully deposited on 6-inch LTEM substrates by ion-beam sputtering. X-ray scattering, transmission electron microscopy and atomic force microscopy were used for characterization of the multilayer interfaces and the surface morphology. The results are correlated to the measured normal incidence reflectivity using synchrotron radiation at the PTB reflectometer at BESSY II, Berlin, Germany.

  2. Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

    Indian Academy of Sciences (India)

    Mahesh Kumar; T N Bhat; M K Rajpalke; B Roul; P Misra; L M Kukreja; Neeraj Sinha; A T Kalghatgi; S B Krupanidhi

    2010-06-01

    Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be ∼ 28.5 meV from the temperature dependent PL studies. The formation process of nanoflowers is investigated and a qualitative mechanism is proposed.

  3. Formation behavior of Be{sub x}Zn{sub 1-x}O alloys grown by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Mingming; Zhu, Yuan; Su, Longxing; Zhang, Quanlin; Chen, Anqi; Ji, Xu; Xiang, Rong; Gui, Xuchun; Wu, Tianzhun [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Pan, Bicai [Department of Physics and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Tang, Zikang [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)

    2013-05-20

    We report the phase formation behavior of Be{sub x}Zn{sub 1-x}O alloys grown by plasma-assisted molecular beam epitaxy. We find the alloy with low- and high-Be contents could be obtained by alloying BeO into ZnO films. X-ray diffraction measurements shows the c lattice constant value shrinks, and room temperature absorption shows the energy band-gap widens after Be incorporated. However, the alloy with intermediate Be composition are unstable and segregated into low- and high-Be contents BeZnO alloys. We demonstrate the phase segregation of Be{sub x}Zn{sub 1-x}O alloys with intermediate Be composition resulted from large internal strain induced by large lattice mismatch between BeO and ZnO.

  4. Silicon-substituted hydroxyapatite coating with Si content on the nanotube-formed Ti–Nb–Zr alloy using electron beam-physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Yong-Hoon [Division of Restorative, Prosthetic and Primary Care Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave., Columbus, OH (United States); Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Restorative, Prosthetic and Primary Care Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave., Columbus, OH (United States)

    2013-11-01

    The purpose of this study was to investigate the electrochemical characteristics of silicon-substituted hydroxyapatite coatings on the nanotube-formed Ti–35Nb–10Zr alloy. The silicon-substituted hydroxyapatite (Si–HA) coatings on the nanotube structure were deposited by electron beam-physical vapor deposition and anodization methods, and biodegradation properties were analyzed by potentiodynamic polarization and electrochemical impedance spectroscopy measurement. The surface characteristics were analyzed by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction (XRD). The Si–HA layers were deposited with rough features having highly ordered nanotube structures on the titanium alloy substrate. The thickness of the Si–HA coating was less than that of the HA coating. The XRD results confirmed that the Si–HA coating on the nanotube structure consisted of TiO{sub 2} anatase, TiO{sub 2} rutile, hydroxyapatite, and calcium phosphate silicate. The Si–HA coating surface exhibited lower I{sub corr} than the HA coating, and the polarization resistance was increased by substitution of silicon in hydroxyapatite. - Highlights: • Silicon substituted hydroxyapatite (Si–HA) was coated on nanotubular titanium alloy. • The Si–HA coating thickness was less than single hydroxyapatite (HA) coating. • Si–HA coatings consisted of TiO{sub 2}, HA, and Ca{sub 5}(PO{sub 4}){sub 2}SiO{sub 4}. • Polarization resistance of the coating was increased by Si substitution in HA.

  5. Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Alevli, Mustafa, E-mail: mustafaalevli@marmara.edu.tr; Gungor, Neşe [Department of Physics, Faculty of Arts and Sciences, Marmara University, Goztepe, 34722 Istanbul (Turkey); Haider, Ali; Kizir, Seda; Leghari, Shahid A.; Biyikli, Necmi, E-mail: biyikli@unam.bilkent.edu.tr [Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, 06800 Ankara, Turkey and National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, 06800 Ankara (Turkey)

    2016-01-15

    Gallium nitride films were grown by hollow cathode plasma-assisted atomic layer deposition using triethylgallium and N{sub 2}/H{sub 2} plasma. An optimized recipe for GaN film was developed, and the effect of substrate temperature was studied in both self-limiting growth window and thermal decomposition-limited growth region. With increased substrate temperature, film crystallinity improved, and the optical band edge decreased from 3.60 to 3.52 eV. The refractive index and reflectivity in Reststrahlen band increased with the substrate temperature. Compressive strain is observed for both samples, and the surface roughness is observed to increase with the substrate temperature. Despite these temperature dependent material properties, the chemical composition, E{sub 1}(TO), phonon position, and crystalline phases present in the GaN film were relatively independent from growth temperature.

  6. Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Murakami, Katsuhisa, E-mail: k.murakami@bk.tsukuba.ac.jp; Hiyama, Takaki; Kuwajima, Tomoya; Fujita, Jun-ichi [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); Tsukuba Research Center for Interdisciplinary Materials Science, University of Tsukuba, Tsukuba 305-8573 (Japan); Tanaka, Shunsuke; Hirukawa, Ayaka [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); Kano, Emi [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); National Institute for Materials Science, Tsukuba 305-0047 (Japan); Takeguchi, Masaki [National Institute for Materials Science, Tsukuba 305-0047 (Japan)

    2015-03-02

    A single layer of graphene with dimensions of 20 mm × 20 mm was grown directly on an insulating substrate by chemical vapor deposition using Ga vapor catalysts. The graphene layer showed highly homogeneous crystal quality over a large area on the insulating substrate. The crystal quality of the graphene was measured by Raman spectroscopy and was found to improve with increasing Ga vapor density on the reaction area. High-resolution transmission electron microscopy observations showed that the synthesized graphene had a perfect atomic-scale crystal structure within its grains, which ranged in size from 50 nm to 200 nm.

  7. Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

    Science.gov (United States)

    Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

    2017-01-18

    Bandgap engineering of kesterite Cu2Zn(Sn, Ge)(S, Se)4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu2Zn(Sn, Ge)(S, Se)4 thin films with tunable bandgap. The bandgap of Cu2Zn(Sn, Ge)(S, Se)4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu2Zn(Sn, Ge)(S, Se)4 thin films exhibits a hall coefficient of +137 cm(3)/C. The resistivity, concentration and carrier mobility of the Cu2ZnSn(S, Se)4 thin film are 3.17 ohm·cm, 4.5 × 10(16) cm(-3), and 43 cm(2)/(V·S) at room temperature, respectively. Moreover, the Cu2ZnSn(S, Se)4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu2Zn(Sn, Ge)(S, Se)4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

  8. The influence of substrate orientation and annealing condition on the properties of LaMnO{sub 3} thin films grown by polymer-assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Changzheng; Shi, Lei, E-mail: shil@ustc.edu.cn; Zhao, Jiyin; Li, Yang; Zhou, Shiming; Yao, Dan

    2015-10-01

    Highlights: • LaMnO{sub 3} thin films were grown by a simple polymer-assisted deposition method. • Increasing the annealing temperature, the T{sub IM} of LaMnO{sub 3} shifts to high temperature. • Changing the substrate orientation from (1 1 1) to (1 0 0), the T{sub IM} of LaMnO{sub 3} increases. • It is showed that magnetic order correlates well with an insulator to metal behavior. - Abstract: The epitaxial films of LaMnO{sub 3} were fabricated via a simple polymer-assisted deposition method. The effects of substrate orientation and annealing condition on the structure and properties of LaMnO{sub 3} films have been investigated. It is found by X-ray diffraction and Raman spectroscopy that increase in the oxygen content results in a decrease in unit cell volume along with a reduction in Jahn–Teller distortion. Besides, with increase in annealing temperature, the resistivity of the film decreases and the insulator–metal transition temperature T{sub IM} shifts to higher temperature. The maximum of the resistivity is highly substrate-orientation dependent in the ascending order of (1 0 0) < (1 1 0) < (1 1 1). Furthermore, the T{sub IM} of LaMnO{sub 3} film increases with the substrate orientation changing from (1 1 1) to (1 0 0). It is shown that magnetic order correlates well with an insulator to metal behavior. All results reveal that the lattice distortion of MnO{sub 6} octahedron can be tuned by different annealing condition and the substrate orientation, which can be effective methods to adjust the structure, electrical and magnetic properties of LaMnO{sub 3} films.

  9. Effects of Ga ion irradiation on growth of GaN on SiN substrates by electron cyclotron resonance-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yanagisawa, J. [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan) and Center for Quantum Science and Technology under Extreme Conditions, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan) and CREST-JST, Kawaguchi Center Building, 4-1-8, Honcho, Kawaguchi, Saitama 332-0012 (Japan)]. E-mail: yanagisawa@ee.es.osaka-u.ac.jp; Matsumoto, H. [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); Fukuyama, T. [Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku, Osaka 535-8585 (Japan); Shiraishi, Y. [Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku, Osaka 535-8585 (Japan); Yodo, T. [Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku, Osaka 535-8585 (Japan); Akasaka, Y. [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan)

    2007-04-15

    The possibility of forming GaN layers on Ga-implanted SiN surfaces was investigated using electron cyclotron resonance-assisted molecular beam epitaxy (MBE). It is found that the GaN layer initially formed on the SiN surface by Ga implantation at room temperature was amorphous-like, but become to polycrystalline after annealing at 650 deg. C for 3 min in vacuum. After the MBE growth of GaN, a grain structure of h-GaN was observed on the Ga-implanted SiN surface. The crystallinity of the GaN grown was, however, decreased upon increasing the Ga ion fluence on the SiN surface, which might be due, at least partly, to the formation of Ga clusters by the excess Ga implanted. The present results indicate the possibility of forming patterned GaN layers on SiN by selective Ga implantation on the SiN substrate, using a focused ion beam.

  10. Monolithic integration of a lithium niobate microresonator with a free-standing waveguide using femtosecond laser assisted ion beam writing

    Science.gov (United States)

    Fang, Zhiwei; Xu, Yingxin; Wang, Min; Qiao, Lingling; Lin, Jintian; Fang, Wei; Cheng, Ya

    2017-01-01

    We demonstrated integrating a high quality factor lithium niobate microdisk resonator with a free-standing membrane waveguide. Our technique is based on femtosecond laser direct writing which produces the pre-structure, followed by focused ion beam milling which reduces the surface roughness of sidewall of the fabricated structure to nanometer scale. Efficient light coupling between the integrated waveguide and microdisk was achieved, and the quality factor of the microresonator was measured as high as 1.67 × 105. PMID:28358135

  11. Evaluation of opening pattern and bone neoformation at median palatal suture area in patients submitted to surgically assisted rapid maxillary expansion (SARME through cone beam computed tomography

    Directory of Open Access Journals (Sweden)

    Daniel Gomes SALGUEIRO

    2015-08-01

    Full Text Available AbstractSurgically assisted rapid maxillary expansion (SARME is the treatment of choice to adult patients even with severe transversal maxillary discrepancies. However, the adequate retention period to achieve the bone remodeling, thus assuring treatment stability, is controversial.Objective To evaluate the opening pattern and bone neoformation process at the midpalatal suture in patients submitted to surgically assisted (SARME through cone beam computed tomography (CBCT.Material and Methods Fourteen patients were submitted to SARME through subtotal Le Fort I osteotomy. Both the opening pattern and the mean bone density at midpalatal suture area to evaluate bone formation were assessed pre- and post-operatively (15, 60 and 180 days through CBCT.Results Type I opening pattern (from anterior to posterior nasal spine occurred in 12 subjects while type II opening pattern (from anterior nasal spine to transverse palatine suture occurred in 2 individuals. The 180-day postoperative mean (PO 180 of bone density value was 49.9% of the preoperative mean (Pre value.Conclusions The opening pattern of midpalatal suture is more related to patients’ age (23.9 years in type I and 33.5 years in type II and surgical technique. It was not possible to observe complete bone formation at midpalatal suture area at the ending of the retention period studied (180 days.

  12. Impact of NiOx Buffer Layers on the Dielectric Properties of BaTiO3 Thin Films on Nickel Substrates Fabricated by Polymer Assisted Deposition

    Directory of Open Access Journals (Sweden)

    Hui Du

    2015-01-01

    Full Text Available Structural health monitoring with piezoelectric thin films integrated on structural metals shows great advantages for potential applications. However, the integration of piezoelectric thin films on structure metals is still challenged. In this paper, we report the piezoelectric barium titanate [BaTiO3 (BTO] thin films deposited on polycrystalline Ni substrates by the polymer assisted deposition (PAD method using NiOx as the buffer layers. The NiOx buffer layers with different thicknesses were prepared by varying immersing time from 5 minutes to 4 hours in H2O2 solution. The dielectric and leakage current properties of the thin films have been studied by general test systems. The BTO/Ni heterostructure with 2-hour immersing time exhibits better dielectric properties with a dielectric constant over 1500 and a 34.8% decrease of the dielectric loss compared to that with 5-minute immersing time. The results show that the leakage current density is strongly affected by the thickness of the NiOx buffer layer. The conduction mechanisms of the BTO/Ni heterostructure have been discussed according to the J-V characteristic curves.

  13. Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    Science.gov (United States)

    Altuntas, Halit; Bayrak, Turkan; Kizir, Seda; Haider, Ali; Biyikli, Necmi

    2016-07-01

    In this study, aluminum nitride (AlN) thin films were deposited at 200 °C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ˜5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density-voltage and frequency dependent (7 kHz-5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole-Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.

  14. Facile preparation of heparinized polysulfone membrane assisted by polydopamine/polyethyleneimine co-deposition for simultaneous LDL selectivity and biocompatibility

    Science.gov (United States)

    Wang, Liwei; Fang, Fei; Liu, Yang; Li, Jing; Huang, Xiaojun

    2016-11-01

    Low-density lipoprotein (LDL) gains worldwide attention for decades as the key risk factor to atherosclerosis that progressively deteriorating into cardiovascular diseases. Until recent years, LDL-apheresis comes to be extensively used as a direct and efficient LDL removal method, with LDL adsorption materials particularly important. In this paper, a new strategy based on the co-deposition of polydopamine (PDA) with polyethylenimine (PEI) onto polysulfone (PSf) membranes, then subsequent heparinization by amino-carbonyl reactions, to achieve LDL selectivity and simultaneous biocompatibility, is proposed. Surface properties of modified PSf membranes are characterized by ATR-FTIR, XPS, FESEM, Zeta potential and WCA measurements. LDL adsorption ability is investigated by ELISA, while blood biocompatibility is evaluated by platelet adhesion experiments. Results suggest that heparin-modified PSf membranes show high selectivity for LDL removal and fine biocompatibility in contact with plasma, as excellent potential materials for LDL-apheresis.

  15. Damage evolution in an electron beam physical vapor deposited thermal barrier coating as a function of cycle temperature and time

    Energy Technology Data Exchange (ETDEWEB)

    Sridharan, Swetha [Department of Metallurgy and Materials Engineering, University of Connecticut, Storrs, CT 06269 (United States); Xie, Liangde [Department of Metallurgy and Materials Engineering, University of Connecticut, Storrs, CT 06269 (United States); Jordan, Eric H. [Department of Mechanical Engineering, University of Connecticut, 191 Auditorium Road, Storrs, CT 06269 (United States)]. E-mail: jordan@engr.uconn.edu; Gell, Maurice [Department of Metallurgy and Materials Engineering, University of Connecticut, Storrs, CT 06269 (United States); Murphy, K.S. [Howmet Research Corporation, Howmet Castings, Whitehall, MI 49461 (United States)

    2005-02-25

    Failure of thermal barrier coatings (TBCs) deposited on a single-crystal superalloy with a grit-blasted platinum modified nickel aluminide [{beta}-(Ni, Pt) Al] bond coat has been studied as a function of thermal cycling temperature and time. One-hour cyclic furnace tests were conducted at 1100 deg. C, 1121 deg. C and 1151 deg. C, and 24-h tests were run at 1121 deg. C. It was found that all the samples tested in the 1-h cycle failed in the TBC, near the TBC/TGO interface, due to progressive cracking beginning at {approx}20% life fraction. In contrast, the 24-h cyclic test samples failed at the TGO/bond coat interface. Thus, a life prediction for this TBC will ultimately require the use of two independent damage mechanisms and failure will be predicted on the basis of whichever occurs first during the TBC cyclic life. A single-valued relation was found between the rumpling amplitudes and the oxide thickness, independent of temperature and cycle time, consistent with oxidation being rate controlling.

  16. Microstructural characterization of Ti-C-N thin films prepared by reactive crossed beam pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Escobar-Alarcon, L., E-mail: luis.escobar@inin.gob.mx [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico DF 11801 (Mexico); Medina, V.; Camps, Enrique; Romero, S. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico DF 11801 (Mexico); Fernandez, M. [Departamento de Aceleradores, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico DF 11801 (Mexico); Solis-Casados, D. [Centro Conjunto de Investigacion en Quimica Sustentable, Facultad de Quimica UAEMex, km. 14.5 carr. Toluca-Atlacomulco (Mexico)

    2011-08-15

    In this work, Raman spectroscopy has been used to characterize Ti-C-N thin films in order to obtain information about the microstructure of the deposited materials, and in particular to study the effects due to the carbon incorporation into the TiN lattice. Ti-C-N thin films were prepared using a crossed plasma configuration in which the ablation of two different targets, titanium and carbon, in a reactive atmosphere was performed. With this configuration, the carbon content in the films was varied in an easy way from 5.0 at% to 40.0 at%. Thin film composition was determined from Non-Rutherford Backscattering Spectroscopy (NRBS) measurements. X-ray photoelectron spectroscopy and X-Ray diffraction measurements were also carried out in order to characterize the films in more detail, with this being used to give support to the interpretation of the Raman spectra. The Raman results revealed that at lower carbon concentrations a solid solution Ti(C, N) is formed, whilst at higher carbon concentrations a nanocomposite, consisting of nanocrystalline TiCN and TiC immersed in an amorphous carbon matrix is obtained.

  17. Study on a Real-Time BEAM System for Diagnosis Assistance Based on a System on Chips Design

    Directory of Open Access Journals (Sweden)

    Kung-Wei Chang

    2013-05-01

    Full Text Available As an innovative as well as an interdisciplinary research project, this study performed an analysis of brain signals so as to establish BrainIC as an auxiliary tool for physician diagnosis. Cognition behavior sciences, embedded technology, system on chips (SOC design and physiological signal processing are integrated in this work. Moreover, a chip is built for real-time electroencephalography (EEG processing purposes and a Brain Electrical Activity Mapping (BEAM system, and a knowledge database is constructed to diagnose psychosis and body challenges in learning various behaviors and signals antithesis by a fuzzy inference engine. This work is completed with a medical support system developed for the mentally disabled or the elderly abled.

  18. Study of pattern transition in nanopatterned Si(100) produced by impurity-assisted low-energy ion-beam erosion

    Science.gov (United States)

    Koyiloth Vayalil, Sarathlal; Gupta, Ajay; Roth, Stephan V.

    2017-04-01

    In this work, formation of self-organized Si nanostructures induced by pure Fe incorporation during normal incidence low-energy (1keV) Ar^+ ion bombardment is presented. It has been observed that the incorporation of Fe affects the evolution of the surface topography. The addition of Fe generates pronounced nanopatterns, such as dots, ripples and combinations of dots and ripples. The orientation of the ripple wave vector of the patterns formed is found to be in a direction normal to the Fe flow. The nanoripples with wavelength of the order of 39 nm produced is expected to be the lowest wavelength of the patterns reported on ion-beam-eroded structures under the incorporation of metallic impurities as per our knowledge. From the AFM and GISAXS analysis, it has been confirmed that the ripples formed are asymmetric in nature. The effect of the concentration of the Fe on morphological transition of the patterns has been studied using Rutherford backscattering measurements.

  19. Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

    Science.gov (United States)

    Dai, Wei; Liu, Jingmao; Geng, Dongsen; Guo, Peng; Zheng, Jun; Wang, Qimin

    2016-12-01

    DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C2H2 and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C2H2 fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C2H2 fraction. The results show that the Al and Cr contents in the films increased continuously as the C2H2 fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would cause abrasive wear and thus deteriorate the wear performance of the films.

  20. Atomic-layer-deposition-assisted ZnO nanoparticles for oxide charge-trap memory thin-film transistors

    Science.gov (United States)

    Seo, Gi Ho; Yun, Da Jeong; Lee, Won Ho; Yoon, Sung Min

    2017-02-01

    ZnO nanoparticles (NPs) with monolayer structures were prepared by atomic layer deposition (ALD) to use for a charge-trap layer (CTL) for nonvolatile memory thin-film transistors (MTFTs). The optimum ALD temperature of the NP formation was demonstrated to be 160 °C. The size and areal density of the ZnO NPs was estimated to be approximately 33 nm and 4.8 × 109 cm-2, respectively, when the number of ALD cycles was controlled to be 20. The fabricated MTFTs using a ZnO-NP CTL exhibited typical memory window properties, which are generated by charge-trap/de-trap processes, in their transfer characteristics and the width of the memory window (MW) increased from 0.6 to 18.0 V when the number of ALD cycles increased from 5 to 30. The program characteristics of the MTFT were markedly enhanced by the post-annealing process performed at 180 °C in an oxygen ambient due to the improvements in the interface and bulk qualities of the ZnO NPs. The program/erase (P/E) speed was estimated to be 10 ms at P/E voltages of -14 and 17 V. The memory margin showed no degradation with the lapse in retention time for 2 × 104 s and after the repetitive P/E operations of 7 × 103 cycles.

  1. 3-D matrix template-assisted growth of oriented oxide nanowire arrays using glancing angle pulsed laser deposition

    Science.gov (United States)

    Wright, N.; Mateo-Feliciano, D.; Ostoski, A.; Mukherjee, P.; Witanachchi, S.

    Nanosphere lithography is a combination of different methods to nanofabrication. In this work nanosphere lithography is used to study the growth of Zinc Oxide Nano-columns (ZnO NCs) on different diameter Silica Nanosphere (SNS) self-assembled templates. ZnO NCs are promising building blocks for many existing and emerging optical, electrical, and piezoelectric devices, specifically, the seeded growth of other oxide materials. Recently, reports have shown a ferroelectric phase of zinc stannate (ZnSnO3) and while lead zirconium titanate oxide (PZT) has been the main material of interest in ferroelectric and piezoelectric applications, the toxicity of lead has been of great concern. The possibility of developing lead free piezoelectric materials is of great interest in the ferroelectric community. Langmuir-Blodgett method was used to construct a self-assembled monolayer of SNSs on silicon substrates. Oriented ZnO NCs were grown on top of the spheres using the glancing angle pulsed laser deposition technique. Columns were formed in a spatially ordered closed-packed hexagonal configuration. Growth of ZnO NCs was studied as function of ambient Oxygen pressure with SNS size ranging from 250-1000 nm. Cross-sectional Scanning Electron Microscopy and X-ray diffraction (XRD) were used to study the template structure. Relative aspect ratios were studied and showed tunability of column dimensions with sphere size. XRD revealed ZnO NC arrays were c-axis oriented with hexagonal wurtzite structure.

  2. UV optical properties of thin film oxide layers deposited by different processes.

    Science.gov (United States)

    Pellicori, Samuel F; Martinez, Carol L

    2011-10-01

    UV optical properties of thin film layers of compound and mixed oxide materials deposited by different processes are presented. Japan Electron Optics Laboratory plasma ion assisted deposition (JEOL PIAD), electron beam with and without IAD, and pulsed DC magnetron sputtering were used. Comparisons are made with published deposition process data. Refractive indices and absorption values to as short as 145 nm were measured by spectroscopic ellipsometry (SE). Electronic interband defect states are detected that are deposition-process dependent. SE might be effective in identifying UV optical film quality, especially in defining processes and material composition beneficial for high-energy excimer laser applications and environments requiring stable optical properties.

  3. Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

    Science.gov (United States)

    Kuritzky, L. Y.; Becerra, D. L.; Saud Abbas, A.; Nedy, J.; Nakamura, S.; DenBaars, S. P.; Cohen, D. A.

    2016-07-01

    We demonstrate a vertical (beam etching (CAIBE) in Cl2 chemistry that is suitable for forming laser diode (LD) facets on nonpolar and semipolar oriented III-nitride devices. The etch profiles were achieved with photoresist masks and optimized CAIBE chamber conditions including the platen tilt angle and Cl2 flow rate. Co-loaded studies showed similar etch rates of ˜60 nm min-1 for (20\\bar{2}\\bar{1}),(20\\bar{2}1), and m-plane orientations. The etched surfaces of LD facets on these orientations are chemically dissimilar (Ga-rich versus N-rich), but were visually indistinguishable, thus confirming the negligible orientation dependence of the etch. Continuous-wave blue LDs were fabricated on the semipolar (20\\bar{2}\\bar{1}) plane to compare CAIBE and reactive ion etch (RIE) facet processes. The CAIBE process resulted in LDs with lower threshold current densities due to reduced parasitic mirror loss compared with the RIE process. The LER, degree of verticality, and model of the 1D vertical laser mode were used to calculate a maximum uncoated facet reflection of 17% (94% of the nominal) for the CAIBE facet. The results demonstrate the suitability of CAIBE for forming high quality facets for high performance nonpolar and semipolar III-N LDs.

  4. Accuracy and speed of robotic assisted needle interventions using a modern cone beam computed tomography intervention suite: a phantom study

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, Boris [Goethe University Hospital, Institute for Diagnostic and Interventional Radiology, Frankfurt (Germany); Goethe University Hospital, Department of Diagnostic and Interventional Radiology, Frankfurt (Germany); Eichler, Katrin; Siebenhandl, Petra; Gruber-Rouh, Tatjana; Vogl, Thomas Josef; Zangos, Stephan [Goethe University Hospital, Institute for Diagnostic and Interventional Radiology, Frankfurt (Germany); Czerny, Christoph [Goethe University Hospital, Department of Trauma Surgery, Frankfurt (Germany)

    2013-01-15

    To analyse the feasibility and accuracy of robotic aided interventions on a phantom when using a modern C-arm-mounted cone beam computed tomography (CBCT) device in combination with needle guidance software. A small robotic device capable of holding and guiding needles was attached to the intervention table. After acquiring a 3D data set the access path was planned on the CBCT workstation and shown on the intervention monitor. Then the robot was aligned to the live fluoroscopic image. A total of 40 punctures were randomly conducted on a phantom armed with several targets (diameter 2 mm) in single and double oblique trajectory (n = 20 each). Target distance, needle deviation and time for the procedures were analysed. All phantom interventions (n = 40) could be performed successfully. Mean target access path within the phantom was 8.5 cm (min 4.2 cm, max 13.5 cm). Average needle tip deviation was 1.1 mm (min 0 mm, max 4.5 mm), time duration was 3:59 min (min 2:07 min, max 10:37 min). When using the proposed robot device in a CBCT intervention suite, highly accurate needle-based interventional punctures are possible in a reasonable timely manner in single as well as in double oblique trajectories. (orig.)

  5. Effects of a high magnetic field on structure evolution and properties of the molecular beam vapor deposited Fe{sub 60}Ni{sub 40} nanoparticles thin films

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Yongze [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Wang, Qiang, E-mail: wangq@mail.neu.edu.cn [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Li, Guojian; Du, Jiaojiao [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Wang, Xiaoguang [Huaxun Vacuum Technology Limited Company, Shenyang 110168 (China); He, Jicheng [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China)

    2014-12-15

    The Fe{sub 60}Ni{sub 40} (in atomic %) nanoparticles (NPs) thin films with 90 nm thickness were prepared on 25 and 400 °C quartz substrates by using the molecular beam vapor deposition (MBVD) method under a 6 T high magnetic field (HMF). The effects of a HMF on the structure evolution and properties of Fe–Ni thin films were studied by using X-ray diffraction, atomic force microscopy, transmission electron microscopy, vibrating sample magnetometer and four-point probe method. The results show that the crystallinity of thin films is enhanced by a 6 T HMF, and a 6 T HMF changes phase composition of thin films on 25 °C substrate. It is found that the nanoparticle size decreases; the nanoparticle size distribution becomes narrow, and the root mean square (rms) roughness of thin films decreases under a 6 T HMF relative to that without HMF. These lead to the decrease of coercive force, and the increase of in-plane remanence ratio under a 6 T HMF.

  6. Influence of the shape and surface oxidation in the magnetization reversal of thin iron nanowires grown by focused electron beam induced deposition

    Directory of Open Access Journals (Sweden)

    Luis A. Rodríguez

    2015-06-01

    Full Text Available Iron nanostructures grown by focused electron beam induced deposition (FEBID are promising for applications in magnetic sensing, storage and logic. Such applications require a precise design and determination of the coercive field (HC, which depends on the shape of the nanostructure. In the present work, we have used the Fe2(CO9 precursor to grow iron nanowires by FEBID in the thickness range from 10 to 45 nm and width range from 50 to 500 nm. These nanowires exhibit an Fe content between 80 and 85%, thus giving a high ferromagnetic signal. Magneto-optical Kerr characterization indicates that HC decreases for increasing thickness and width, providing a route to control the magnetization reversal field through the modification of the nanowire dimensions. Transmission electron microscopy experiments indicate that these wires have a bell-type shape with a surface oxide layer of about 5 nm. Such features are decisive in the actual value of HC as micromagnetic simulations demonstrate. These results will help to make appropriate designs of magnetic nanowires grown by FEBID.

  7. Optimization of TiO2/Cu/TiO2 multilayers as a transparent composite electrode deposited by electron-beam evaporation at room temperature

    Institute of Scientific and Technical Information of China (English)

    孙洪涛; 王小平; 寇志起; 王丽军; 王金烨; 孙义清

    2015-01-01

    Highly transparent indium-free composite electrodes of TiO2/Cu/TiO2 are deposited by electron-beam evaporation at room temperature. The effects of Cu thickness and annealing temperature on the electrical and optical properties of the multilayer film are investigated. The critical thickness of Cu mid-layer to form a continuous conducting layer is found to be 11 nm. The multilayer with a mid-Cu thickness of 11 nm is optimized to obtain a resistivity of 7.4×10−5 Ω·cm and an average optical transmittance of 86%in the visible spectral range. The figure of merit of the TiO2/Cu(11 nm)/TiO2 multilayer annealed at 150 ◦C reaches a minimum resistivity of 5.9×10−5 Ω·cm and an average optical transmittance of 88%in the visible spectral range. The experimental results indicate that TiO2/Cu/TiO2 multilayers can be used as a transparent electrode for solar cell and other display applications.

  8. Electrical characteristics of mixed Zr-Si oxide thin films prepared by ion beam induced chemical vapor deposition at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ferrer, F.J., E-mail: fjferrer@us.e [Centro Nacional de Aceleradores (CSIC - U. Sevilla), Av. Thomas A. Edison 7, E-41092 Sevilla (Spain); Frutos, F. [E.T.S. de Ingenieria Informatica, Avda. Reina Mercedes s/n, E-41012 Sevilla (Spain); Garcia-Lopez, J. [Centro Nacional de Aceleradores (CSIC - U. Sevilla), Av. Thomas A. Edison 7, E-41092 Sevilla (Spain); Jimenez, C. [Laboratoire de Materiaux et de Genie Physique, BP 257 - INPGrenoble Minatec - 3 parvis Louis Neel - 38016 Grenoble (France); Yubero, F. [Instituto de Ciencia de Materiales de Sevilla (CSIC - U. Sevilla), c/ Americo Vespucio 49, E-41092 Sevilla (Spain)

    2009-07-31

    Mixed Zr-Si oxide thin films have been prepared at room temperature by ion beam decomposition of organometallic volatile precursors. The films were flat and amorphous. They did not present phase segregation of the pure single oxides. A significant amount of impurities (-C-, -CH{sub x}, -OH, and other radicals coming from partially decomposed precursors) remained incorporated in the films after the deposition process. This effect is minimized if the Ar content in the O{sub 2}/Ar bombarding gas is maximized. Static permittivity and breakdown electrical field of the films were determined by capacitance-voltage and current-voltage electrical measurements. It is found that the static permittivity increases non-linearly from {approx} 4 for pure SiO{sub 2} to {approx} 15 for pure ZrO{sub 2}. Most of the dielectric failures in the films were due to extrinsic breakdown failures. The maximum breakdown electrical field decreases from {approx} 10.5 MV/cm for pure SiO{sub 2} to {approx} 45 MV/cm for pure ZrO{sub 2}. These characteristics are justified by high impurity content of the thin films. In addition, the analysis of the conduction mechanisms in the formed dielectrics is consistent to Schottky and Poole-Frenkel emission for low and high electric fields applied, respectively.

  9. Effects of N2 Pressure on the Structural and Electrical Properties of TiN Films Deposited by Laser Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    FU Yueehun; XIE Shangsheng; MENG Xianghai; He Huan; SHEN Xiaoming

    2011-01-01

    Titanium nitride (TiN) films were deposited on Si(100) substrates by laser molecular beam epitaxy(LMBE),and their properties of structure and resistivity with varying N2 pressure were investigated.The results showed that atomically flat TiN films with layer-by-layer growth mode were successfully grown on Si(100) substrates,and (200) was the preferred orientation.With the increasing of N2 pressure,the N/Ti ratio gradually increased and the diffraction peak progressively shifted towards lower diffraction angle.At pressure of 0.1 Pa,stoichiometric TiN film was formed which exhibited the characteristic diffraction angle of (200) plane.All films showed high reflectance to infrared spectrum and the films with overstoichiometry and understoichiometry had a higher resistivity owing to the surface particles and lattice distortion,while the stoichiometric TiN film depicted the minimum resistivity,around 19 μΩ · cm.

  10. Atomic Diffusion in Cu/Si (111) and Cu/SiO2/Si (111) Systems by Neutral Cluster Beam Deposition

    Institute of Scientific and Technical Information of China (English)

    CAO Bo; LI Gong-Ping; CHEN Xi-Meng; CHO Seong-Jin; KIM Hee

    2008-01-01

    @@ The Cu films are deposited on two kinds of p-type Si (111) substrates by ionized cluster beam (ICB) technique.The interface reaction and atomic diffusion of Cu/Si (111) and Cu/SiO2/Si (111) systems are studied at different annealing temperatures by x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results are obtained: For the Cu/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230℃. The diffusion coefficients of the samples annealed at 230℃and 500℃ are 8.5 × 10-15 cm2.s-1 and 3.0 × 10-14 cm2.s-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450℃. The diffusion coefficients of Cu in Si are calculated to be 6.0 × 10-16 cm2.s-1 at 450℃, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.

  11. Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  12. Efficient Performance of Electrostatic Spray-Deposited TiO2 Blocking Layers in Dye-Sensitized Solar Cells after Swift Heavy Ion Beam Irradiation.

    Science.gov (United States)

    Sudhagar, P; Asokan, K; Jung, June Hyuk; Lee, Yong-Gun; Park, Suil; Kang, Yong Soo

    2011-12-01

    A compact TiO2 layer (~1.1 μm) prepared by electrostatic spray deposition (ESD) and swift heavy ion beam (SHI) irradiation using oxygen ions onto a fluorinated tin oxide (FTO) conducting substrate showed enhancement of photovoltaic performance in dye-sensitized solar cells (DSSCs). The short circuit current density (Jsc = 12.2 mA cm(-2)) of DSSCs was found to increase significantly when an ESD technique was applied for fabrication of the TiO2 blocking layer, compared to a conventional spin-coated layer (Jsc = 8.9 mA cm(-2)). When SHI irradiation of oxygen ions of fluence 1 × 10(13) ions/cm(2) was carried out on the ESD TiO2, it was found that the energy conversion efficiency improved mainly due to the increase in open circuit voltage of DSSCs. This increased energy conversion efficiency seems to be associated with improved electronic energy transfer by increasing the densification of the blocking layer and improving the adhesion between the blocking layer and the FTO substrate. The adhesion results from instantaneous local melting of the TiO2 particles. An increase in the electron transport from the blocking layer may also retard the electron recombination process due to the oxidized species present in the electrolyte. These findings from novel treatments using ESD and SHI irradiation techniques may provide a new tool to improve the photovoltaic performance of DSSCs.

  13. SiO{sub 2}/TiO{sub 2} thin films with variable refractive index prepared by ion beam induced and plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gracia, F. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Yubero, F. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Holgado, J.P. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Gonzalez-Elipe, A.R. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain)]. E-mail: arge@icmse.csic.es; Girardeau, T. [Laboratoire de Metallurgie Physique de Poitiers, UMR 6630 CNRS, Bat SP2MI BP 30179, 86962-Futuroscope-Chasseneuil Cedex (France)

    2006-04-03

    SiO{sub 2}/TiO{sub 2} optical thin films with variable compositions have been prepared by ion beam induced and plasma enhanced chemical vapour deposition (IBICVD and PECVD). While the films obtained by IBICVD were very compact, the PECVD ones with a high content of Ti presented a columnar microstructure. The formation of Si-O-Ti bonds and a change in the environment around titanium from four- to six-coordinated has been proved by vibrational and X-ray absorption spectroscopies. The refractive index increased with the titanium content from 1.45 to 2.46 or 2.09 for, respectively, the IBICVD and PECVD films. Meanwhile, the band gap decreased, first sharply and then more smoothly up to the value of pure TiO{sub 2}. It is concluded that the optical properties of SiO{sub 2}/TiO{sub 2} thin films can be properly tailored by using these two procedures.

  14. Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)%原子氢辅助分子束外延GaAs(331)A表面形貌演化

    Institute of Scientific and Technical Information of China (English)

    牛智红; 任正伟; 贺振宏

    2008-01-01

    Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.%研究了GaAs高指数面(331)A在原子氢辅助下分子束外延形貌的演化.原子力显微镜测试表明:在常规分子束外延情况下,GaAs外延层台阶的厚度和台面的宽度随衬底温度的升高而增加,增加外延层厚度会导致台阶的密度和台面的宽度增加然后饱和.而在原子氢辅助分子束外延情况下,当GaAs淀积量相同时GaAs外延层台阶的密度增大宽度减小.认为这是由于原子氢的作用导致Ga原子迁移长度的减小.在GaAs(331)A台阶基底上生长出InAs自组织纳米线,用光荧光测试研究了其光学各项异性特征.

  15. Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics

    Science.gov (United States)

    Jeong, Seong-Jun; Kim, Hyo Won; Heo, Jinseong; Lee, Min-Hyun; Song, Hyun Jae; Ku, JiYeon; Lee, Yunseong; Cho, Yeonchoo; Jeon, Woojin; Suh, Hwansoo; Hwang, Sungwoo; Park, Seongjun

    2016-09-01

    Among the most fundamental challenges encountered in the successful incorporation of graphene in silicon-based electronics is the conformal growth of ultrathin dielectric films, especially those with thicknesses lower than 5 nm, on chemically inert graphene surfaces. Here, we present physisorbed-precursor-assisted atomic layer deposition (pALD) as an extremely robust method for fabricating such films. Using atomic-scale characterisation, it is confirmed that conformal and intact ultrathin Al2O3 films can be synthesised on graphene by pALD. The mechanism underlying the pALD process is identified through first-principles calculations based on density functional theory. Further, this novel deposition technique is used to fabricate two types of wafer-scale devices. It is found that the incorporation of a 5 nm-thick pALD Al2O3 gate dielectric film improves the performance of metal-oxide-graphene field-effect transistors to a greater extent than does the incorporation of a conventional ALD Al2O3 film. We also employ a 5 nm-thick pALD HfO2 film as a highly scalable dielectric layer with a capacitance equivalent oxide thickness of 1 nm in graphene-based tunnelling field-effect transistors fabricated on a glass wafer and achieve a subthreshold swing of 30 mV/dec. This significant improvement in switching allows for the low-voltage operation of an inverter within 0.5 V of both the drain and the gate voltages, thus paving the way for low-power electronics.

  16. Resonant and nonresonant vibrational excitation of ammonia molecules in the growth of gallium nitride using laser-assisted metal organic chemical vapour deposition

    Science.gov (United States)

    Golgir, Hossein Rabiee; Zhou, Yun Shen; Li, Dawei; Keramatnejad, Kamran; Xiong, Wei; Wang, Mengmeng; Jiang, Li Jia; Huang, Xi; Jiang, Lan; Silvain, Jean Francois; Lu, Yong Feng

    2016-09-01

    The influence of exciting ammonia (NH3) molecular vibration in the growth of gallium nitride (GaN) was investigated by using an infrared laser-assisted metal organic chemical vapor deposition method. A wavelength tunable CO2 laser was used to selectively excite the individual vibration