WorldWideScience

Sample records for beam assisted deposition

  1. Lifetime obtained by ion beam assisted deposition

    International Nuclear Information System (INIS)

    We have fabricated green organic light-emitting diodes based on tris-(8-hydroxyquinoline)aluminium (Alq3) thin films. In order to favor the charge carriers transport from the anode, we have deposited a N,N'-diphenyl-N,N'-bis (3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) layer (hole transport layer) on a ITO anode. Cathode is obtained with a calcium layer covered with a silver layer. This silver layer is used to protect the other layers against oxygen during the OLED use. All the depositions are performed under vacuum and the devices are not exposed to air during their realisation. In order to improve the silver layer characteristics, we have realized this layer with the ion beam assisted deposition process. The aim of this process is to densify the layer and then reduce the permeation of H2O and O2. We have used argon ions to assist the silver deposition. All the OLEDs optoelectronic characterizations (I = f(V), L = f(V)) are performed in the ambient air. We compare the results obtained with the assisted layer with those obtained with a classical cathode realized by thermal unassisted evaporation. We have realized lifetime measurements in the ambient air and we discuss about the assisted layer influence on the OLEDs performances

  2. Dual ion beam assisted deposition of biaxially textured template layers

    Energy Technology Data Exchange (ETDEWEB)

    Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

    2005-05-31

    The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

  3. Silicon nitride layers on tool steel produced by ion beam mixing and ion beam assisted deposition

    International Nuclear Information System (INIS)

    Silicon nitride layers on tool steel are produced both, by Kr+ implantation into reactively sputtered Si3N4 on steel (ion beam mixing) and N2+ implantation into evaporated Si on steel (ion beam assisted deposition). Atomic concentration profiles of Fe and Si measured by RBS and XPS show interface mixing. After ion beam assisted deposition complete Si-N compound formation takes place as shown by XPS. Ion beam mixing of Si3N4/steel decreases the etch rate in hydrochloric acid by 50% with respect to uncovered steel. After flash lamp annealing the ion irradiated silicon nitride layer becomes stable against the aggressive acid used. (author)

  4. Hemocompatibility of DLC coatings synthesized by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Ion beam-assisted diamond-like carbon (DLC) coatings have beenused for growing the human platelet, fibrinogen, and albumin in the control environment in order to assess their hemocompatibility. The hard carbon films were prepared on polymethylmethacrylate (PMMA) at room temperature using ion beam assisted deposition (IBAD). Raman spectroscopic analysis proved that the carbon films on PMMA are diamond-like with a higher fraction of sp\\+3 bonds in the structure of mixed sp\\+2+sp\\+3 bonding. The blood protein adsorption tests showed that DLC coatings can adsorb more albumin and are slightly more fibrinogen than the PMMA chosen as a control sample. The platelets adhered on DLC coatings were reduced significantly in number. These results indicate good hemocompatibility of DLC coatings.

  5. Characteristics of MoSx films deposited by ion beam assistance

    International Nuclear Information System (INIS)

    For MoSx films deposited by ion beam assistance, the effect of bombarded ion species, deposition mode, substrate materials and humidity of store environment etc on the properties of these films has been studied. Experimental results indicated that the effect of these factors on films can not be ignored both in the film's deposition and in uses

  6. Texture development of CeO2 thin films deposited by ion beam assisted deposition

    International Nuclear Information System (INIS)

    CeO2 thin films were prepared on amorphous quartz glass substrates by the ion beam assisted deposition (IBAD) technique at room temperature. In order to control both the in-plane and out-of-plane texture of the films, a special geometrical arrangement of the ion sources, the target, and the substrate was used. A new concept, considering the role of reflected particles from the target, which we call self-IBAD, was introduced. The structural properties of the CeO2 films were investigated by x-ray diffraction. Good biaxially textured films were obtained with out-of-plane mosaic spreads of 3.0 deg. and in-plane alignment of 10.8 deg. C

  7. Ion assistance effects on electron beam deposited MgF sub 2 films

    CERN Document Server

    Alvisi, M; Della Patria, A; Di Giulio, M; Masetti, E; Perrone, M R; Protopapa, M L; Tepore, A

    2002-01-01

    Thin films of MgF sub 2 have been deposited by the ion-assisted electron-beam evaporation technique in order to find out the ion beam parameters leading to films of high laser damage threshold whose optical properties are stable under uncontrolled atmosphere conditions. It has been found that the ion-assisted electron-beam evaporation technique allows getting films with optical properties (refraction index and extinction coefficient) of high environmental stability by properly choosing the ion-source voltage and current. But, the laser damage fluence at 308 nm was quite dependent on the assisting ion beam parameters. Larger laser damage fluences have been found for the films deposited by using assisting ion beams delivered at lower anode voltage and current values. It has also been found that the films deposited without ion assistance were characterized by the highest laser damage fluence (5.9 J/cm sup 2) and the lowest environmental stability. The scanning electron microscopy analysis of the irradiated areas...

  8. Maskless formation of tungsten films by ion beam assisted deposition technique

    International Nuclear Information System (INIS)

    W films were deposited on n-GaAs by ion beam assisted deposition technique using low energy H2+ and Ar+, and film properties and residual damage in the substrate were investigated by measuring x-ray photoemission, current-voltage characteristics and deep level transient spectroscopy. Films with a resistivity of 10-5ohm · cm were formed. This paper reports that it was observed that damage can be reduced using the low energy beams and that Schottky contacts with n-factor of almost 1 and barrier height of 0.88 eV were formed

  9. Biaxially textured Ag films by grazing ion beam assisted deposition

    International Nuclear Information System (INIS)

    The effect of grazing incidence 4 keV Ar+ ion irradiation on the early stage of Ag thin film growth on amorphous Si was investigated. The double effect of axial and surface channeling resulted in grains oriented along the axis in-plane, while the (111) out-of-plane texture was maintained. A slight average tilt of the (111) out-of-plane texture axis towards the ion beam direction is proposed to result from the difference between terrace and step edge sputtering yield. The observed tilt is consistent with a minimum erosion orientation of the surface profile.

  10. Thermal stability of AlN films prepared by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Highlights: • AlN films were deposited by dual ion beam sputtering. • Optical constants were measured by spectroscopic ellipsometry. • Diffuse reflection was measured by UV–vis spectroscopy. • Oxidized process of the AlN films was studied. - Abstract: The thermal stability of AlN films deposited by ion beam assisted deposition was performed at 600 °C for 192 h under air ambient. The composition, morphology and optical properties were studied by X-ray photoelectron spectrometer, transmission electron microscopy, scanning electron microscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The results show that the deposited film is polycrystalline, smooth, dense and homogenous. The oxidation of grain boundary takes place due to the element diffusion in the polycrystalline material. Oxidation produces amorphous oxide layers on the surface of film. As annealing time increases, surface roughness and diffuse reflection increase. Annealing has little influence on refractive index and extinction coefficient

  11. Thermal stability of AlN films prepared by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Jian-ping [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Liu, Xiao-peng, E-mail: xpgliu@yahoo.com.cn [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Fu, Zhi-qiang, E-mail: fuzq@cugb.edu.cn [School of Engineering and Technology, China University of Geosciences (Beijing), Beijing 100083 (China); Wang, Xiao-jing; Hao, Lei [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China)

    2015-08-30

    Highlights: • AlN films were deposited by dual ion beam sputtering. • Optical constants were measured by spectroscopic ellipsometry. • Diffuse reflection was measured by UV–vis spectroscopy. • Oxidized process of the AlN films was studied. - Abstract: The thermal stability of AlN films deposited by ion beam assisted deposition was performed at 600 °C for 192 h under air ambient. The composition, morphology and optical properties were studied by X-ray photoelectron spectrometer, transmission electron microscopy, scanning electron microscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The results show that the deposited film is polycrystalline, smooth, dense and homogenous. The oxidation of grain boundary takes place due to the element diffusion in the polycrystalline material. Oxidation produces amorphous oxide layers on the surface of film. As annealing time increases, surface roughness and diffuse reflection increase. Annealing has little influence on refractive index and extinction coefficient.

  12. An orientation competition in yttria-stabilized zirconia thin films fabricated by ion beam assisted sputtering deposition

    International Nuclear Information System (INIS)

    A previously found orientation competition in ion beam sputtered yttria-stabilized zirconia thin films was studied in detail. The effects of sputtering energy and deposition angle were analyzed in ion sputtered films without assisting ions bombardment. It is found that for normally deposited films, (001) and (011) orientations are favored at low and high sputtering energy respectively. For inclined substrate deposited films, as deposition angle increases, (001), (011) and (111) orientations are advantaged in turn. The results can be attributed to the in-plane energy exchange of deposition atom and adatoms. In ion beam assisting deposited YSZ films of low assisting ions energy and current, a (001) oriented biaxial texture is gradually induced as ion energy increased. In the case of ion beam assisted inclined deposition of 45°, (001) orientation is enhanced and two preferential in-plane orientations are found coexist.

  13. Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

    International Nuclear Information System (INIS)

    Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90 deg. C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cmx20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%

  14. Ion beam assisted deposition of Ti–Si–C thin films

    Directory of Open Access Journals (Sweden)

    A. Twardowska

    2009-11-01

    Full Text Available Purpose: Deposition of hard thin multilayer coatings is a common practice in improving the performance of tools for many different applications. From this aspect Ti3SiC2, due to its lamellar structure and unique combination of properties is a potential interlayer material candidate for thermo-mechanical application.Design/methodology/approach: Multiphase Ti–Si–C thin films were deposited by the ion beam assisted deposition (IBAD technique from a single Ti3SiC2 compound target on an AISI 316L steel substrate. To optimize the deposition process, Monte Carlo simulations were performed; the range of the deposition parameters was determined and then experimentally verified. Scanning and transmission electron microscopies were used to examine the microstructure and quality of the deposited films. Mechanical properties were determined by nanoindentation tests.Findings: The deposited film was flat, smooth and dense with small crystalline particles. The hardness HIT of coated substrates was in the range 2.7 to 5.3 GPa. The average calculated value reduced elastic modulus EIT for coated substrates was 160 GPa. The hardness and reduced elastic modulus for uncoated substrates were HIT = 4.4 GPa and EIT = 250 GPa, respectively.Practical implications: PVD techniques enable low substrate temperature deposition, preferred due to the thermal limitations of the metallic substrates commonly used in industrial applications. The aim of this work is low temperature deposition of Ti-Si-C film, from a single Ti3SiC2 compound target, on 316L steel substrate, using the IBAD technique, known for excellent film connection to the substrate.Originality/value: Ion beam assisted deposition parameters were calculated and experimentally verified.

  15. Ion beam assisted deposition of nano-structured C:Ni films

    International Nuclear Information System (INIS)

    Nanostructures influence material properties dramatically due to size, shape and interface effects. Thus the control of the structure at the nanoscale is a key issue in nanomaterials science. The interaction of hyperthermal ions with solids is confined to the nanometer scale. Thus, it can be used to control the morphology evolution during multiphase film deposition. Ion-induced displacements occur in a thin surface layer of the growing film where they increase the atomic mobility for the phase separation. Here the growth-structure relationship of C:Ni (15 at.%) nanocomposite films grown by oblique incidence (45 ) ion beam assisted deposition is reported. The influences of the flux of an assisting Ar+ ion beam (0-140 eV) as well as of an elevated substrate temperature have been studied. The formation of elongated nickel nanoparticles is strongly promoted by the ion beam assistance. Moreover, the metal nanocolumns no longer align with the advancing surface, but with the incoming ions. A window of conditions is established within which the ion assistance leads to the formation of regular composition modulations with a well defined periodicity and tilt. As the dominating driving force for the pattern formation is of physical origin, this approach might be applicable to other immiscible systems.

  16. Microanalyses of the hydroxyl—poly—calcium sodium phosphate coatings produced by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    LIUZhong-Yang; WANGChang-Xing; 等

    2002-01-01

    Thin calcium phosphate catings on titanium alloy substrates were prepared by Ar+ ion beam assisted deposition(IBAD) from hydroxyl-poly-calcium sodium phosphate(HPPA) target.The coatings were analyzed by XRD,FTIR,XPS,These analyses revealed that the as-deposited films were amorphous or no apparent crystallinity.No distinct absorption band of the hydroxyl group was observed in FTIR spectra of the coatings but new absorption bands were presented for CO3-2,The calcium to phosphorous ratio of these catings in different IBAD conditions varied from 0.46 to 3.36.

  17. Copper thin films by ion beam assisted deposition: Strong texture, superior thermal stability and enhanced hardness

    International Nuclear Information System (INIS)

    Nanocrystalline metals generally exhibit exceptionally high strength. However, their susceptibility to grain growth restricts their applications in high temperature environments. The current study presents that nanocrystalline Cu thin films produced by ion beam assisted deposition (IBAD) are able to sustain their as-deposited microstructure and high hardness upon annealing at high temperatures. IBAD-Cu films exhibit a strong (1 1 1) fiber texture, which is caused by the ion beam induced effects of substrate cleaning, preferential damage and preferential sputtering. The microstructure of the IBAD-Cu films is stable at temperatures up to 800 °C (80% of the melting point of Cu). The hardness of the as-deposited IBAD-Cu films can reach a maximum value of 3.85 GPa. Even after annealing, their hardness is still much higher than that of the normally deposited (without ion beam) films as well as their bulk nanocrystalline counterparts before heat treatment. The excellent thermal stability of microstructure is attributed to the formation of nanometer-sized voids and their pinning effect on grain boundary migration. The kinetics of void formation, the contribution of twin boundaries and ion beam induced defects to the hardness are analyzed and discussed. The findings in this study demonstrate that IBAD is an effective method for the stabilization of microstructure and mechanical properties of nanocrystalline metal thin films

  18. Ion-beam-assisted deposition and ion beam synthesis of wear resistant coatings on technical surfaces

    International Nuclear Information System (INIS)

    An ion implanter with a non-mass-separated ion beam, already used for experiments as well as industrial applications, was equipped with an electron-gun evaporator to allow for simultaneous or sequential implantation and coating. Using this equipment, ion-beam-assited deposition (IBAD) of different layers, and in particular the formation of layers of TiN on steel with very good adhesion, was possible. To produce TiN, titanium was evaporated and nitrogen was implanted. The maximum growth rate of the TiN films was 1 nm s-1. Examinations showed superior wear properties in comparison with ion-plated layers and an unusual high Knoop microhardness. Under certain experimental conditions, the stoichiometric ratio was found to be 1:1 even if the ion density was varied slightly, making the IBAD process easily controllable. The layers did not have the yellow color typical of ion-plated TiN layers but were neutral gray. Nevertheless, electron diffraction investigations confirmed the typical crystalline structure of TiN. Analytical investigations were performed and compared with those of ion-plated TiN. Details of the equipment, including operation conditions, as well as experimental results of film properties will be reported. (orig.)

  19. Antibacterial and corrosion resistance of TiN/Ag multilayers by ion beam assisted deposition

    International Nuclear Information System (INIS)

    TiN/Ag multilayers were deposited on medical stainless steel 317L by ion beam assisted deposition (IBAD). Standard agar dilution method was used to test antibacterial ratio using E.coil and S.aureus. Electro-chemical method was used to test corrosion resistance of the film in Hank's simulated human plasma. The structure and depth profile of the elements were investigated by XPS, XRD and ALES. The results show that a strong antibacterial ratio (>99%) can be obtained when the modulation period of TiN/Ag multilayers is 8 nm (5 nm TiN and 3 nm Ag). Its corrosion resistance is better than medical stainless steel 317L, approaching monolayer TiN. (authors)

  20. Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

    International Nuclear Information System (INIS)

    Silicon oxynitride (SiOxNy) films (0.1-0.7 μm) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N2 and Ar, or O2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized

  1. Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

    Science.gov (United States)

    Shima, Yukari; Hasuyama, Hiroki; Kondoh, Toshiharu; Imaoka, Yasuo; Watari, Takanori; Baba, Koumei; Hatada, Ruriko

    1999-01-01

    Silicon oxynitride (SiO xN y) films (0.1-0.7 μm) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N 2 and Ar, or O 2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized.

  2. Optimization of Energy Scope for Titanium Nitride Films Grown by Ion Beam-Assisted Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Wei; MA Zhong-Quan; WANG Ye; WANG De-Ming

    2006-01-01

    The deposited energy during film growth with ion bombardment, correlated to the atomic displacement on the surface monolayer and the underlying bulk, has been calculated by a simplified ion-solid interaction model under binary collision approximation. The separated damage energies caused by Ar ion, different for the surface and the bulk, have been determined under the standard collision cross section and a well-defined surface and bulk atom displacement threshold energy of titanium nitride (TiN). The optimum energy scope shows that the incident energy of Ar+ around 110eV for TiN (111) and 80eV for TiN (200) effectively enhances the mobility of adatom on surface but excludes the damage in underlying bulk. The theoretical prediction and the experimental result are in good agreement in low energy ion beam-assisted deposition.

  3. Beam steering laser assisted deposition system for high-Tc superconducting thin film devices

    International Nuclear Information System (INIS)

    We present the design and construction of a beam steering laser-assisted deposition system (LAD) for high quality epitaxial YBaCuO superconducting thin film production suitable for commercial application. Deposition of single layer or multilayer YBaCuO superconducting thin film on large and complex surfaced substrate is now feasible. Expitaxial and polycrystaline films with onsets at 90 K having 6 K transition widths have been produced. Dome-shaped magnetic shield enclosures, microwave cavity resonant in the TM010 mode, and short dipole antennas have been fabricated. The advantages of the laser ablation deposition method [J. T. Cheung and D. T. Chueng, J. Vac. Sci. Technol. 21, 182 (1982)] are its simplicity and cleanliness. Laser ablation deposition is a viable method to produce high quality thin film of the Tl-based compound [S. H. Liou and K. D. Aylesworth, Appl. Phys. Lett. 54, 760 (1989)] by using a small target in a sealed environment which is important in handling toxic material of a Tl-based compounds

  4. Biaxial Texture Evolution in MgO Films Fabricated Using Ion Beam-Assisted Deposition

    Science.gov (United States)

    Xue, Yan; Zhang, Ya-Hui; Zhao, Rui-Peng; Zhang, Fei; Lu, Yu-Ming; Cai, Chuan-Bing; Xiong, Jie; Tao, Bo-Wan

    2016-04-01

    The growth of multifunctional thin films on flexible substrates is important technologically, because flexible electronics require such a platform. In this study, we examined the evolution of biaxial texture in MgO films prepared using ion beam-assisted deposition (IBAD) on a Hastelloy substrate. Texture and microstructure developments were characterized through in situ reflection high-energy electron diffraction monitoring, x-ray diffraction, and atomic force microscopy, which demonstrated that biaxial texture was developed during the nucleation stage (~2.2 nm). The best biaxial texture was obtained with a thickness of approximately 12 nm. As MgO continued to grow, the influence of surface energy was reduced, and film growth was driven by the attempt to minimize volume free-energy density. Thus the MgO grains were subsequently rotated at the (002) direction toward the ion beam. In addition, an approach was developed for accelerating in-plane texture evolution by pre-depositing an amorphous MgO layer before IBAD.

  5. Biaxial Texture Evolution in MgO Films Fabricated Using Ion Beam-Assisted Deposition

    Science.gov (United States)

    Xue, Yan; Zhang, Ya-Hui; Zhao, Rui-Peng; Zhang, Fei; Lu, Yu-Ming; Cai, Chuan-Bing; Xiong, Jie; Tao, Bo-Wan

    2016-07-01

    The growth of multifunctional thin films on flexible substrates is important technologically, because flexible electronics require such a platform. In this study, we examined the evolution of biaxial texture in MgO films prepared using ion beam-assisted deposition (IBAD) on a Hastelloy substrate. Texture and microstructure developments were characterized through in situ reflection high-energy electron diffraction monitoring, x-ray diffraction, and atomic force microscopy, which demonstrated that biaxial texture was developed during the nucleation stage (~2.2 nm). The best biaxial texture was obtained with a thickness of approximately 12 nm. As MgO continued to grow, the influence of surface energy was reduced, and film growth was driven by the attempt to minimize volume free-energy density. Thus the MgO grains were subsequently rotated at the (002) direction toward the ion beam. In addition, an approach was developed for accelerating in-plane texture evolution by pre-depositing an amorphous MgO layer before IBAD.

  6. Continuous electropolishing of Hastelloy substrates for ion-beam assisted deposition of MgO

    Energy Technology Data Exchange (ETDEWEB)

    Kreiskott, Sascha; Arendt, Paul N; Bronisz, Lawrence E; Foltyn, Steve R; Matias, Vladimir [Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2003-05-01

    We demonstrate the applicability of continuous electropolishing for the preparation of metal tapes for ion-beam assisted deposition of MgO for the fabrication of in-plane textured template layers. These templates are used for the fabrication of second generation high temperature superconducting wires utilizing YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} coatings on metallic substrates. Surface roughness values below 1 nm and local slopes of less than 1 deg. could be achieved with the electropolishing process. Mean surface roughness values are lower with the use of electropolishing and slopes of surface roughness inclines are significantly reduced compared to the best results of mechanical polishing (3.5 nm and 5 deg., respectively). The cost-effective process of electropolishing shows great promise for the fabrication of second generation high temperature superconducting wire.

  7. Continuous electropolishing of Hastelloy substrates for ion-beam assisted deposition of MgO

    International Nuclear Information System (INIS)

    We demonstrate the applicability of continuous electropolishing for the preparation of metal tapes for ion-beam assisted deposition of MgO for the fabrication of in-plane textured template layers. These templates are used for the fabrication of second generation high temperature superconducting wires utilizing YBa2Cu3O7-δ coatings on metallic substrates. Surface roughness values below 1 nm and local slopes of less than 1 deg. could be achieved with the electropolishing process. Mean surface roughness values are lower with the use of electropolishing and slopes of surface roughness inclines are significantly reduced compared to the best results of mechanical polishing (3.5 nm and 5 deg., respectively). The cost-effective process of electropolishing shows great promise for the fabrication of second generation high temperature superconducting wire

  8. Nitrogen ion energy dependencies of dielectric constants and compositions of barium carbide-barium nitrate mixed films deposited on silicon wafers by an ion beam assisted deposition technique

    International Nuclear Information System (INIS)

    Thin BaC6-BaN2O4 mixed films with a thickness of 25-60 nm were deposited on Si wafers by evaporating BaCO3 with electron beams and simultaneously applying a mixed beam of N2 molecules and nitrogen ions (an ion beam assisted deposition technique). BaC6 films deposited on Si wafers by evaporating only BaCO3 had low-k values, such as 1.3. In contrast, mixed films containing a small amount of BaC6 and a large amount of BaN2O4 had mild k values, such as 5.6

  9. Tilting of carbon encapsulated metallic nanocolumns in carbon-nickel nanocomposite films by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Krause, Matthias [Helmholtz-Zentrum Dresden-Rossendorf, PF-510119, 01314 Dresden (Germany); Technische Universitaet Dresden, D-01062 Dresden (Germany); Muecklich, Arndt; Zschornak, Matthias; Wintz, Sebastian; Gemming, Sibylle; Abrasonis, Gintautas [Helmholtz-Zentrum Dresden-Rossendorf, PF-510119, 01314 Dresden (Germany); Oates, Thomas W. H. [Leibniz-Institut fuer Analytische Wissenschaft, ISAS e.V., Albert-Einstein-Str. 9, 12489 Berlin (Germany); Luis Endrino, Jose [Surfaces and Coatings Department, Instituto de Ciencia de Materiales de Madrid, c/Sor Juana Ines de la Cruz 3, Cantoblanco, 28049 Madrid (Spain); Baehtz, Carsten; Shalimov, Artem [Helmholtz-Zentrum Dresden-Rossendorf, PF-510119, 01314 Dresden (Germany); Rossendorf Beamline, European Synchrotron Radiation Facility, F-38043 Grenoble (France)

    2012-07-30

    The influence of assisting low-energy ({approx}50-100 eV) ion irradiation effects on the morphology of C:Ni ({approx}15 at. %) nanocomposite films during ion beam assisted deposition (IBAD) is investigated. It is shown that IBAD promotes the columnar growth of carbon encapsulated metallic nanoparticles. The momentum transfer from assisting ions results in tilting of the columns in relation to the growing film surface. Complex secondary structures are obtained, in which a significant part of the columns grows under local epitaxy via the junction of sequentially deposited thin film fractions. The influence of such anisotropic film morphology on the optical properties is highlighted.

  10. Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shima, Yukari; Hasuyama, Hiroki E-mail: hasuyama@cc.kurume-it.ac.jp; Kondoh, Toshiharu; Imaoka, Yasuo; Watari, Takanori; Baba, Koumei; Hatada, Ruriko

    1999-01-02

    Silicon oxynitride (SiO{sub x}N{sub y}) films (0.1-0.7 {mu}m) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N{sub 2} and Ar, or O{sub 2} and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized.

  11. Infrared and ion beam analysis of SI/sub x/N/sub 1-x/ alloys grown by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Thin films of amorphous Si/sub x/N/sub 1-x/ alloys were produced by nitrogen ion beam assisted deposition of electron beam evaporated silicon. Infrared reflection spectra were measured in the range 600 to 10000 cm/sup -1/. Fringes were observed due to interference between light multiply-reflected from the front surface and film-substrate (single crystal silicon) interface. Similar measurements were performed on films crystallized by post-deposition furnace anneals. Analyses of the reflection spectra were used to obtain refractive index profiles. Profiles were correlated with nitrogen content as measured by Rutherford Backscattering Spectometry (RBS) and Auger Electron Spectroscopy (AES). Film adhesion, density, and purity were found to be improved for depositions assisted by nitrogen ion beams (1000 to 25,000 eV) relative to unassisted evaporation, and the index of refraction decreases monotonically with increasing nitrogen content

  12. Mechanical properties and thermal stability of TiAlN/Ta multilayer film deposited by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Highlights: • Nanohardness of the TiAlN/Ta multilayer film was 29% higher than that of the TiAlN monolayer film. • Compared to the TiAlN monolayer film, a 47% increase of elastic modulus was achieved. • Bonding strength of the TiAlN/Ta multilayer film was higher than that of the TiAlN monolayer film. • The TiAlN/Ta multilayer film has better thermal stability than the TiAlN monolayer film. - Abstract: TiAlN/Ta multilayer film with the total thickness of 2 μm was deposited onto silicon (1 0 0) wafer by ion beam assisted deposition using Ti0.5Al0.5 and Ta as the target materials. Observation of the cross-sectional microstructure and XRD pattern showed that the Ta sub-layer restrained the growth of TiAlN crystal, and decreased the grain size. Nanohardness (H) of the TiAlN/Ta multilayer film was 29% higher and the elastic modulus (E) was 47% higher than that of the TiAlN monolayer film. The critical fracture load (Lc) of 72 mN for the TiAlN/Ta multilayer film was achieved, much higher than that of the monolayer TiAlN film (30 mN), indicated a significant increase of bonding strength. Results of DSC analysis indicated that the TiAlN/Ta multilayer film had the exothermic peak at around 935 °C, 75 °C above that for the TiAlN monolayer film. Existence of the Ta sub-layers behaved as the barrier layers to prevent oxygen from diffusing into inner layers, resulted in the improvement of thermal stability

  13. Ion beams application to modification of surface layer of solids with particular regard to IBAD method - ion beam assisted deposition realized in the INP; Zastosowanie wiazek jonowych do modyfikowania warstwy wierzchniej cial stalych, ze szczegolnym uwzglednieniem metody IBAD - Ion Beam Assisted Deposition, realizowanej w IFJ

    Energy Technology Data Exchange (ETDEWEB)

    Drwiega, M.; Lipinska, E.

    1992-12-31

    The different trends in ion engineering such as: dynamic ion mixing, ionized cluster beam deposition and ion beam assisted deposition are described. Some examples of properties of surface coatings are given and their applications are presented. The future of ion engineering is described. 48 refs, 12 figs, 4 tabs.

  14. Study of the growth of biaxially textured CeO2 films during ion-beam-assisted deposition

    International Nuclear Information System (INIS)

    Biaxially textured CeO2 films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55 deg. to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2θ-scan and φ-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276

  15. Study of the growth of biaxially textured CeO{sub 2} films during ion-beam-assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chang Su [Department of Metallurgical Engineering, Yonsei University, Seodaemoon Ku, Shinchon Dong 134, Seoul 120-749 (Korea, Republic of); Jo, Sung Jin [Department of Metallurgical Engineering, Yonsei University, Seodaemoon Ku, Shinchon Dong 134, Seoul 120-749 (Korea, Republic of); Jeong, Soon Moon [Department of Metallurgical Engineering, Yonsei University, Seodaemoon Ku, Shinchon Dong 134, Seoul 120-749 (Korea, Republic of); Kim, Woo Jin [Department of Metallurgical Engineering, Yonsei University, Seodaemoon Ku, Shinchon Dong 134, Seoul 120-749 (Korea, Republic of); Baik, Hong Koo [Department of Metallurgical Engineering, Yonsei University, Seodaemoon Ku, Shinchon Dong 134, Seoul 120-749 (Korea, Republic of); Lee, Se Jong [Department of Materials Science and Engineering, Kyungsung University, Busan 608-736 (Korea, Republic of); Song, Kie Moon [Department of Applied Physics, Konkuk University, Chungju 380-701 (Korea, Republic of)

    2005-03-01

    Biaxially textured CeO{sub 2} films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55 deg. to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2{theta}-scan and {phi}-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO{sub 2} films have been successfully grown on Hastelloy C276.

  16. Study of the growth of biaxially textured CeO2 films during ion-beam-assisted deposition

    Science.gov (United States)

    Kim, Chang Su; Jo, Sung Jin; Jeong, Soon Moon; Kim, Woo Jin; Baik, Hong Koo; Lee, Se Jong; Song, Kie Moon

    2005-03-01

    Biaxially textured CeO2 films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55° to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2θ-scan and phgr-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.

  17. Ion beam-assisted deposition of boron nitride from a condensed layer of diborane and ammonia at 78 K

    International Nuclear Information System (INIS)

    This paper examines the ion beam-assisted deposition (IBAD) of thin boron nitride films using cryogenically condensed precursors. Low energy (1100 eV) argon ad (2000 eV) deuterated ammonia beams with currents of 600--850 nA were used to mix and initiate reactions in frozen (90 K) layers of diborane (B2H6 and ammonia (NH3) or only B2H6, respectively. The resulting film is shown to be an amorphous BN coating approximately 30 Angstrom thick

  18. Mechanical properties and wear resistance of ion-beam-assisted sputter-deposited NiTi(N) coatings

    International Nuclear Information System (INIS)

    Thin films are deposited on an austenitic type 304L stainless steel using the sputtering of an Ni49Ti51 target with 1.5 keV N+ ions. The influence of a simultaneous 160 keV Ar+ implantation on hardness and wear resistance is studied. Hardness is measured with a nanoindenter. N+ reactive sputtering forms a coating harder than the substrate. The hardness increases by 80% when the eposit is ion beam assisted. Transmission electron microscopy analyses of the thin films reveal that the N+ sputtered films present a large content of nitrogen which forms with titanium strong disorganized metal-metalloid Ti-N bonds; when ion implantation is simultaneously used, very tiny crystalline TiN precipitates embedded in an amorphous matrix are observed. This could explain the increase in hardness. The simultaneous ion irradiation would favour TiN precipitation through an enhanced diffusion mechanism in the cascades. Subsequent wear resistance of these coatings is measured through three-dimensional profile analyses of the wear tracks obtained after tests performed on a pin-on-disc machine. It is shown that sputtered NiTi(N) coatings largely increase the wear resistance. When the deposit is ion beam assisted, the improvement is much more pronounced; it can be related to either the increase in the hardness or the ion beam mixing of the interface, or both these processes. The influence of the coating thickness and the ratio of the implanted ions to the deposited atoms are also studied. (orig.)

  19. Ion-beam assisted deposition of MgO with in situ RHEED monitoring to control Bi-axial texture

    Energy Technology Data Exchange (ETDEWEB)

    Arendt, P. N. (Paul N.); Foltyn, S. R. (Stephen R.); Jia, Quanxi; DePaula, R. F. (Raymond Felix); Dowden, P. C. (Paul C.); Kung, H. (Harriett); Holesinger, T. G. (Terry G.); Stan, L. (Liliana); Emmert, L. A. (Luke A.); Peterson, E. J. (Eric J.); Groves, J. R. (James R.)

    2001-01-01

    We have studied the growth of magnesium oxide using ion-beam assisted deposition (IBAD) to achieve (100) oriented, bi-axially textured films with low mosaic spread, for film thicknesses of 10 nm on silicon substrates. We have refined the process by using reflected high-energy electron diffraction (RHEED) to monitor the growth of IBAD MgO films and found that the diffracted intensity can be used to determine (and ultimately control) final in-plane texture of the film. Here we present results on our work to develop the use of real-time RHEED monitoring to deposit well-oriented IBAD MgO films. The results have been corroborated with extensive grazing-incidence X-ray diffraction (GID). Results of these analyses have allowed us to deposit films on metallic substrates with in-plane mosaic spread less than 7{sup o}.

  20. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    International Nuclear Information System (INIS)

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO2 based thin film catalysts is discussed.

  1. Relation between electrical resistivity and argon concentration of copper thin films prepared by ion-beam-assisted deposition

    International Nuclear Information System (INIS)

    Particle Induced X-ray Emission (PIXE) measurements were applied to the evaluation of the argon concentration in the copper thin films prepared by Ion-Beam-Assisted Deposition (IBAD) technique. The relation between electrical resistivity and argon concentration in the films were investigated. The crystallinity and the atomic density were also examined with x-ray diffraction and Rutherford Backscattering Spectrometry (RBS). The obtained results indicated that although the grain size of the films becomes larger with the ion irradiation, electrical resistivity increases with an increase in the ion quantity. (author)

  2. Study of TiCxNy films formed by ion beam assisted deposition on 9Cr18 steel

    International Nuclear Information System (INIS)

    The TiCxNy films were formed on 9Cr18 steel matrix using the ion beam assisted deposition. The TEM analysis revealed the films with a polycrystalline structure with (111), (200) and (220) preferred orientation. The fact that TiCxNy films contain oxygen coordination was further confirmed by AES and XPS. It was found that microhardness of the films was dependent on its N content, and it was decreased for an excessively high N content. An assisted dose of 3 x 1017/cm2 is optimum in this experiment. A dry friction test indicated that oxidation resistance of the films is excellent, and oxidation of the steel matrix in the friction process can be obviously inhibited. Both the abrasive and adhesive wears of matrix are improved, and a trend of transformation from adhesive into abrasive wear appears for the steel matrix

  3. Ferroelectric polarization and resistive switching characteristics of ion beam assisted sputter deposited BaTiO3 thin films

    Science.gov (United States)

    Silva, J. P. B.; Kamakshi, Koppole; Sekhar, K. C.; Moreira, J. Agostinho; Almeida, A.; Pereira, M.; Gomes, M. J. M.

    2016-05-01

    In this work, 150 nm thick polycrystalline BaTiO3 (BTO) films were deposited on Pt/TiO2/SiO2/Si substrate by ion beam assisted sputter deposition technique. The bias voltage dependent resistive switching (RS) and ferroelectric polarization characteristics of Au/BTO/Pt devices are investigated. The devices display the stable bipolar RS characteristics without an initial electroforming process. Fittings to current-voltage (I-V) curves suggest that low and high resistance states are governed, respectively, by filamentary model and trap controlled space charge limited conduction mechanism, where the oxygen vacancies act as traps. Presence of oxygen vacancies is evidenced from the photoluminescence spectrum. The devices also display P-V loops with remnant polarization (Pr) of 5.7 μC/cm2 and a coercive electric field (Ec) of 173.0 kV/cm. The coupling between the ferroelectric polarization and RS effect in BTO films is demonstrated.

  4. AMORPHIZATION IN Nb-M (M=Fe, Co, Ni) BINARY METAL SYSTEMS INDUCED BY ION BEAM ASSISTED DEPOSITION (IBAD)

    Institute of Scientific and Technical Information of China (English)

    F. Pan; F. Zeng; B. Zhao

    2002-01-01

    Ion beam assisted deposition technique (IBAD) was utilized to systematically studyamorphization in binary metal systems of Nb-magnetic element, i.e., Nb-M (M=Fe,Co or Ni). The glass forming range terned as Nb fraction of Nb-Fe system was about34at.% to 56at.%, that of Nb-Co system was about 32at.% to 72at.% and that of Nb-Ni about 20at.% to 80at.%. Similar percolation patterns were found in amorphousalloy films. The fractal dimensions of the percolation patterns approach to 2, whichindicates 2-D layer growth for amorphous phases. It is regarded that the assistedAr+ ion beam duringthe deposition process plays important role for the 2-D layergrowth. Some metastable crystalline phases were obtained in these three systems byIBAD, e.g., bcc supersaturated solid solutions in Nb-Fe and Nb-Co systems, fcc andhcp phases in Nb-Co and Nb-Ni systems. The formation and competing between theamorphous and the metastable crystalline phases were determined by both the phases'thermodynamic states in binary metal systems and kinetics during IBAD process.

  5. Fabrication of single TiO2 nanotube devices with Pt interconnections using electron- and ion-beam-assisted deposition

    Science.gov (United States)

    Lee, Mingun; Cha, Dongkyu; Huang, Jie; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    Device fabrication using nanostructured materials, such as nanotubes, requires appropriate metal interconnections between nanotubes and electrical probing pads. Here, electron-beam-assisted deposition (EBAD) and ion-beam-assisted deposition (IBAD) techniques for fabrication of Pt interconnections for single TiO2 nanotube devices are investigated. IBAD conditions were optimized to reduce the leakage current as a result of Pt spreading. The resistivity of the IBAD-Pt was about three orders of magnitude less than that of the EBAD-Pt, due to low carbon concentration and Ga doping, as indicated by X-ray photoelectron spectroscopy analysis. The total resistances of single TiO2 nanotube devices with EBAD- or IBAD-Pt interconnections were 3.82 × 1010 and 4.76 × 108 Ω, respectively. When the resistivity of a single nanotube is low, the high series resistance of EBAD-Pt cannot be ignored. IBAD is a suitable method for nanotechnology applications, such as photocatalysis and biosensors.

  6. An ultra-low energy (30-200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum.

    Science.gov (United States)

    Mach, Jindrich; Samoril, Tomás; Voborný, Stanislav; Kolíbal, Miroslav; Zlámal, Jakub; Spousta, Jirí; Dittrichová, Libuse; Sikola, Tomás

    2011-08-01

    The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values (≈10(1) eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 10(1) eV and 10(1) nA/cm(2), respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions. PMID:21895238

  7. Effect of substrate temperature on the texture of MgO films grown by ion beam assisted deposition

    International Nuclear Information System (INIS)

    In this paper, the role of substrate temperature in the crystalline texture of MgO films grown by ion beam assisted deposition (IBAD) is investigated. This study reveals that the best in-plane alignment for MgO films grown on Y2O3/Si is obtained at ∼25 deg. C. At this temperature, MgO films with an in-plane orientation distribution as low as 3.70 full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100 deg. C have broad in-plane alignment. Although the deposition at the lowest temperature (-150 deg. C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This study is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired

  8. Effect of substrate temperature on the texture of MgO films grown by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Stan, Liliana; Arendt, Paul N; DePaula, Raymond F; Usov, Igor O; Groves, James R [Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2006-04-15

    In this paper, the role of substrate temperature in the crystalline texture of MgO films grown by ion beam assisted deposition (IBAD) is investigated. This study reveals that the best in-plane alignment for MgO films grown on Y{sub 2}O{sub 3}/Si is obtained at {approx}25 deg. C. At this temperature, MgO films with an in-plane orientation distribution as low as 3.7{sup 0} full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100 deg. C have broad in-plane alignment. Although the deposition at the lowest temperature (-150 deg. C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This study is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired.

  9. Growth of Biaxially Textured Yttria-Stabilized Zirconia Thin Films on Si(111) Substrate by Ion Beam Assisted Deposition

    Institute of Scientific and Technical Information of China (English)

    MU Hai-Chuan; REN Cong-Xin; JIANG Bing-Yao; DING Xing-Zhao; YU Yue-Hui; WANG Xi; LIU Xiang-Huai; ZHOU Gui-En; JIA Yun-Bo

    2000-01-01

    The (001) oriented yttria-stabilized zirconia (YSZ) films with in-plane biaxial texture have been deposited on Si(lll ) substrates by ion beam assisted deposition at ambient temperature. The effects of ion/atom arrival rate ratio (R=(Ar+ +O2+)/ZrO2) and incident angle of bombarding ion beam on the film texture development were investigated. It was found that the in-plane biaxial texture of the films was improved gradually with increasing ion/atom arrival rate ratio R up to a critical value 1.9, but it was degraded with the further increase of R. The optimal in-plane biaxial texture, whose full width at half maximum of the (lll) φ-scan spectrum is 14°, can be obtained at R=1.9 and incident angle of 55°. For a fixed R, the optimal crystallinity and in-plane biaxial alignment of the YSZ films did not appear at the same incident angle and showed an opposite variation with the change of the incident angle from 51° to 55°. C-axis lignment (perpendicular to substrate surface) does not show any substantial variation with the change of incident angle within the range of 47° - 56°.

  10. Integration of biaxally aligned conducting oxides with silicon using ion-beam assisted deposited MgO templates

    Energy Technology Data Exchange (ETDEWEB)

    Park, B. H. (Bae Ho); Groves, J. R. (James R.); DePaula, R. F. (Raymond Felix); Jia, Quanxi; Arendt, P. N. (Paul N.); Emmert, L. A. (Luke A.)

    2001-01-01

    Two conducting oxides, La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) and SrRuO{sub 3}, were deposited by pulsed laser ablation onto silicon substrates coated with biaxially textured MgO on an amorphous silicon nitride isolation layer. Comparison is made between templates using just 10 nm of ion-beam assisted deposited (IBAD) MgO and substrates with an additional 100 nm of homoepitaxial MgO. Both of these conducting oxide layers exhibited in-plane and out-of-plane texture, on the order of that obtained by the underlying MgO. The SrRuO{sub 3} was c-axis oriented on both substrates, but exhibited a slightly sharper out-of-plane texture when the homoepitaxial MgO layer was included. On the other hand, the LSCO showed only (100) orientation when deposited directly on the IBAD-MgO templates, whereas a significant (110) peak was observed for films on the homoepitaxial MgO. A simple calculation of the distribution of grain boundary angles, assuming a normal distribution of grains, is also presented.

  11. Effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 and stress control

    Institute of Scientific and Technical Information of China (English)

    Yu-Qiong Li; Hua-Qing Wang; Wu-Yu Wang; Zhi-Nong Yu; He-Shan Liu; Gang Jin

    2012-01-01

    Based on Hartmann-Shack sensor technique,an online thin film stress measuring system was introduced to measure the film stresses of TiO2 and SiO2,and comparison was made between the film stresses prepared respectively by the conventional process and the ion-beam assisted deposition.The effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 was investigated in details,and the stress control methodologies using on-line adjustment and film doping were put forward.The results show that the film stress value of TiO2 prepared by ion-beam assisted deposition is 40 MPa lower than that prepared by conventional process,and the stress of TiO2 film changes gradually from tensile stress into compressive stress with increasing ion energy; while the film stress of SiO2 is a tensile stress under ion-beam assisted deposition because of the ion-beam sputtering effect,and the film refractive index decreases with increasing ion energy.A dynamic film stress control can be achieved through in-situ adjustment of the processing parameters based on the online film stress measuring technique,and the intrinsic stress of film can be effectively changed through film doping.

  12. Effects of deposition conditions on gas-barrier performance of SiOxNy thin films formed via ion-beam-assisted vapor deposition

    International Nuclear Information System (INIS)

    SiOxNy thin films were synthesized via ion-beam-assisted vapor deposition (IVD) where deposition of SiOx was irradiated by nitrogen ions. Firstly, reasonable-cost evaporation materials showing less splashing for the SiOx films were investigated by selecting appropriate sintering condition regimes of Si and SiO2 mixed powders. The SiOxNy thin films on a polyethylene terephtalate film substrate obtained via IVD showed a low oxygen transmission rate (OTR) of less than 1 cm3/m2 day. Effective nitrogen ion irradiation energy per atom was 8 eV/at. or greater, which is consistent with regimes where densification of thin films is reported to occur. Higher N2 partial pressure yielded a lower OTR and a higher nitrogen atomic ratio of the films obtained. It is suggested that the improvement in gas-barrier performance resulted from densification and chemical change of the films due to energy addition and nitrification produced by nitrogen ion-beam irradiation

  13. Enhanced activity and interfacial durability study of ultra low Pt based electrocatalysts prepared by ion beam assisted deposition (IBAD) method

    International Nuclear Information System (INIS)

    Ultra low loading noble metal (0.04-0.12 mgPt/cm2) based electrodes were obtained by direct metallization of non-catalyzed gas diffusion layers via dual ion beam assisted deposition (IBAD) method. Fuel cell performance results reported earlier indicate significant improvements in terms of mass specific power density of 0.297 gPt/kW with 250 A thick IBAD deposit (0.04 mgPt/cm2 for a total MEA loading of 0.08 mgPt/cm2) at 0.65 V in contrast to the state of the art power density of 1.18 gPt/kW using 1 mgPt(MEA)/cm2 at 0.65 V. In this article we report the peroxide radical initiated attack of the membrane electrode assembly utilizing IBAD electrodes in comparison to commercially available E-TEK (now BASF Fuel Cell GmbH) electrodes and find the pathway of membrane degradation as well. A novel segmented fuel cell is used for this purpose to relate membrane degradation to peroxide generation at the electrode/electrolyte interface by means of systematic pre and post analyses of the membrane are presented. Also, we present the results of in situ X-ray absorption spectroscopy (XAS) experiments to elucidate the structure/property relationships of these electrodes that lead to superior performance in terms of gravimetric power density obtained during fuel cell operation.

  14. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.

    Science.gov (United States)

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  15. Mechanical and tribological properties of carbon thin film with tungsten interlayer prepared by Ion beam assisted deposition

    Czech Academy of Sciences Publication Activity Database

    Vlčák, P.; Černý, F.; Tolde, Z.; Sepitka, J.; Gregora, Ivan; Daniš, S.

    2013-01-01

    Roč. 2013, FEB (2013). ISSN 2314-4874 Institutional support: RVO:68378271 Keywords : carbon coatings * ion beam deposition * XRD * nanoindentation Subject RIV: BM - Solid Matter Physics ; Magnetism http://dx.doi.org/10.1155/2013/630156

  16. Influence of deposition parameters on surface roughness and mechanical properties of boron carbon nitride coatings synthesized by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Boron carbon nitride (BCN) coatings were deposited on Si(100) wafers and Si3N4 disks by using ion beam assisted deposition from a boron carbide target. The BCN coatings were synthesized by the reaction between boron and carbon vapor as well as nitrogen ion simultaneously. The influence of deposition parameters such as ion acceleration voltage, ion acceleration current density and deposition ratio on the surface roughness and mechanical properties of the BCN coatings was investigated. The surface roughness was determined by using atomic force microscopy and the mechanical properties of the BCN coatings were evaluated by nano-indentation tests and friction tests in N2 gas. The composition and chemical bonding of the BCN coatings were analyzed by using X-ray photoelectron spectroscopy. The results showed that the lower deposition rate, the smaller surface roughness and higher nano-hardness the BCN coatings were. The BCN coating with the smoothest surface (R a = 0.25 nm and R P-V = 2.8 nm) and the highest nanohardness of 33 GPa as well as excellent friction property were obtained at 0.5 nm/s and the nitrogen ions were generated at 2.0 kV and 60 μA/cm2, and the chemical composition of this BCN coating was 49 at.% B, 42 at.% C and 9 at.% N. Moreover, there were several bonding states such as B-N, B-C and C-N with B-C-N hybridization in this BCN coating

  17. Low temperature Ti-Si-C thin film deposition by ion beam assisted methods

    Science.gov (United States)

    Twardowska, Agnieszka; Rajchel, Boguslaw; Jaworska, Lucyna

    2010-11-01

    Thin, multiphase Ti-Si-C coatings were formed by IBSD or by IBAD methods on AISI 316L steel substrates in room temperature, using single Ti3SiC2 target. In those methods the TiXSiCY coatings were formed from the flux of energetic atoms and ions obtained by ion sputtering of the Ti3SiC2 compound sample. As sputtering beam the beam of Ar+ ions at energy of 15keV was applied. In the IBAD method the dynamically formed coatings were additionally bombarded by beam of Ar+ ions at energy of 15keV. The ion beams parameters were obtained by using Monte Carlo computer simulations. The morphology (SEM, TEM), chemical (EDS/EDX) and phase composition (XRD) examinations of formed coatings were provided as well as confocal Raman microspectroscopy. Analyzed coatings were relatively thin (150nm-1μm), flat and dense. XRD analysis indicated in amorphous TiSi, the traces of Ti5Si3 and other phases from Ti-Si-C system (TiSi, TiSi2,Ti3SiC2). For chemical bonds investigation, the laser beam with length of 532nm was used. Those analyses were performed in the low (LR) or in high (HR) resolution modes in room temperature and in 4000C. In the HR mode the spectral resolution was close to 2 cm-1. In Raman spectra peaks at: 152cm-1, 216cm-1, 278cm-1, 311 cm-1, 608cm-1, 691cm-1 were recorded. Nanoindentation tests were done on coated and uncoated substrates with diamond, Berkovich-type indenter. Vickers hardness HIT and reduced elastic modulus EIT were calculated using Olivier& Pharr method. HIT for coated substrates was in the range 2.7 to 5.3 GPa, EIT was 160 GPa.

  18. Low temperature Ti-Si-C thin film deposition by ion beam assisted methods

    International Nuclear Information System (INIS)

    Thin, multiphase Ti-Si-C coatings were formed by IBSD or by IBAD methods on AISI 316L steel substrates in room temperature, using single Ti3SiC2 target. In those methods the TiXSiCY coatings were formed from the flux of energetic atoms and ions obtained by ion sputtering of the Ti3SiC2 compound sample. As sputtering beam the beam of Ar+ ions at energy of 15keV was applied. In the IBAD method the dynamically formed coatings were additionally bombarded by beam of Ar+ ions at energy of 15keV. The ion beams parameters were obtained by using Monte Carlo computer simulations. The morphology (SEM, TEM), chemical (EDS/EDX) and phase composition (XRD) examinations of formed coatings were provided as well as confocal Raman microspectroscopy. Analyzed coatings were relatively thin (150nm-1μm), flat and dense. XRD analysis indicated in amorphous TiSi, the traces of Ti5Si3 and other phases from Ti-Si-C system (TiSi, TiSi2,Ti3SiC2). For chemical bonds investigation, the laser beam with length of 532nm was used. Those analyses were performed in the low (LR) or in high (HR) resolution modes in room temperature and in 400deg. C. In the HR mode the spectral resolution was close to 2 cm-1. In Raman spectra peaks at: 152cm-1, 216cm-1, 278cm-1, 311 cm-1, 608cm-1, 691cm-1 were recorded. Nanoindentation tests were done on coated and uncoated substrates with diamond, Berkovich-type indenter. Vickers hardness HIT and reduced elastic modulus EIT were calculated using Olivier and Pharr method. HIT for coated substrates was in the range 2.7 to 5.3 GPa, EIT was 160 GPa.

  19. Low temperature Ti-Si-C thin film deposition by ion beam assisted methods

    Energy Technology Data Exchange (ETDEWEB)

    Twardowska, Agnieszka; Rajchel, Boguslaw; Jaworska, Lucyna, E-mail: atwardow@up.krakow.pl

    2010-11-15

    Thin, multiphase Ti-Si-C coatings were formed by IBSD or by IBAD methods on AISI 316L steel substrates in room temperature, using single Ti{sub 3}SiC{sub 2} target. In those methods the Ti{sub X}SiC{sub Y} coatings were formed from the flux of energetic atoms and ions obtained by ion sputtering of the Ti{sub 3}SiC{sub 2} compound sample. As sputtering beam the beam of Ar{sup +} ions at energy of 15keV was applied. In the IBAD method the dynamically formed coatings were additionally bombarded by beam of Ar{sup +} ions at energy of 15keV. The ion beams parameters were obtained by using Monte Carlo computer simulations. The morphology (SEM, TEM), chemical (EDS/EDX) and phase composition (XRD) examinations of formed coatings were provided as well as confocal Raman microspectroscopy. Analyzed coatings were relatively thin (150nm-1{mu}m), flat and dense. XRD analysis indicated in amorphous TiSi, the traces of Ti{sub 5}Si{sub 3} and other phases from Ti-Si-C system (TiSi, TiSi{sub 2},Ti{sub 3}SiC{sub 2}). For chemical bonds investigation, the laser beam with length of 532nm was used. Those analyses were performed in the low (LR) or in high (HR) resolution modes in room temperature and in 400deg. C. In the HR mode the spectral resolution was close to 2 cm{sup -1}. In Raman spectra peaks at: 152cm{sup -1}, 216cm{sup -1}, 278cm{sup -1}, 311 cm{sup -1}, 608cm{sup -1}, 691cm{sup -1} were recorded. Nanoindentation tests were done on coated and uncoated substrates with diamond, Berkovich-type indenter. Vickers hardness H{sub IT} and reduced elastic modulus E{sub IT} were calculated using Olivier and Pharr method. H{sub IT} for coated substrates was in the range 2.7 to 5.3 GPa, E{sub IT} was 160 GPa.

  20. A study of the thin film battery electrolyte lithium phosphorus oxynitride deposited by an ion beam assisted process

    Science.gov (United States)

    Vereda-Moratilla, Fernando

    Thin film Li-ion batteries are currently the subject of a world-wide research effort because of their many potential applications as portable energy sources. One of the key elements of these batteries is the electrolyte. Since it was first produced in the early 1990's, the preferred solid state thin film Li-ion electrolyte is lithium phosphorus oxynitride (LiPON), which is normally grown by means of reactive rf sputtering of a Li3PO 4 target in an N2 atmosphere. Solid electrolytes such as LiPON have several advantages compared to the liquid electrolytes normally used in bulk batteries. Solid electrolytes avoid leakage and have excellent charge-discharge cycling properties. Furthermore, sputtered-deposited LiPON proved to be stable versus Li+/Li from 0 to +5.5 V, which exceeded the stability window of any of the liquid electrolytes. In this work we present a general study of the properties of LiPON thin films deposited by an alternative process: ion beam assisted deposition (IBAD). In this process Li3PO4 is vacuum thermally evaporated and the condensing film is simultaneously bombarded with nitrogen ions which incorporate to form LiPON. Because of its application as an electrolyte and because of a previous study in which we showed that tensile stress led to cracking of the LiPON films and subsequently to shorting of the battery devices, the emphasis of the study was placed on improving the electrochemical properties of the films and on reducing their residual stress. Additional effort was aimed at learning about the structure and the composition of our films. It has been shown that IBAD LiPON thin films are undoubtedly capable of high quality performance as the electrolyte in Li-ion thin film batteries. Their ionic conductivity is almost as high, and their electronic conductivity as low, as those of the sputtered films. Their major advantages when compared to sputtered LiPON films are: (i) a higher deposition rate; (ii) a lower concentration of reduced-phosphorus in

  1. Surface roughness of MgO thin film and its critical thickness for optimal biaxial texturing by ion-beam-assisted deposition

    International Nuclear Information System (INIS)

    We investigated the deposition time dependences of the in-plane grain alignment (Δφ) and the surface roughness (w) of biaxially textured MgO thin films fabricated by ion-beam-assisted deposition (IBAD) and found a strong correlation between them. The time evolution of the surface roughness of IBAD-MgO showed an abrupt increase at the same time corresponding to the beginning of the deterioration in Δφ. The roughness versus thickness profiles obtained under different deposition conditions with different assisting ion-beam currents collapsed to a single curve, even though the deposition rates were significantly different in each condition. This implies that the abrupt increase in roughness occurred at the same thickness--of about 4 nm--irrespective of the deposition rate. The result also indicated that the Δφ deterioration began with the same thickness of about 4 nm. This ''critical'' thickness of about 4 nm might be related to the completion of the crystallization of the film. Further, deposition beyond the critical thickness, therefore, became merely a homoepitaxial deposition under the ''IBAD'' condition, which was far from optimal because of the ion bombardment and low temperature (no-heating), and thus Δφ deteriorated. Based on these considerations, we propose an approach to attain a sharp texture in a IBAD-MgO-based biaxial substrate; moreover, we demonstrated this approach using a two-step deposition process.

  2. Ion-beam-assisted deposition of Al films with strong preferential orientation

    International Nuclear Information System (INIS)

    Preferential crystal orientation of Al films deposited under simultaneous argon-ion irradiation has been investigated by changing both the ion-to-atom arrival rate ratio (ion-atom ratio) and the ion energy. The intensity of the reflection, I(111), obtained from X-ray diffraction shows a drastic increase with ion irradiation, although the effect on other reflection peaks such as I(200) is only slight. The intensity ratio I(111)/I(200), a parameter for the electromigration resistance of Al films, has shown the highest value at a certain optimum ion-atom ratio. This optimum ion-atom ratio for each ion energy is found to shift toward lower values with increasing ion energy. Under the optimum conditions, the average ion energy per neutral atom after cascade collisions is found to be about 1.2 eV irrespective of the primary ion energy, which is comparable with the energy for the self-diffusion of Al (1.4 eV). The electrical measurements have shown that the resistivity of Al films increases considerably with simultaneous ion irradiation, however, it recovers to a level comparable with that of unassisted films by annealing at 400degC. (orig.)

  3. TEM investigations of Ni-Cu thin film coatings, obtained by multilayer technique, coevaporation, and ion beam assisted deposition

    International Nuclear Information System (INIS)

    The microstructural aspects of three different thin film coatings of NiCu at the equiatomic concentration are studied by TEM investigations. Those coatings are: multilayered samples, coevaporated samples, and ion beam assisted codeposited samples. In all cases, under certain experimental conditions of irradiation and annealing, an unexpected L10 ordered phase precipitates in the solid solution matrix of NiCu. (author)

  4. Protective Sliding Carbon-Based Nanolayers Prepared by Argon or Nitrogen Ion-Beam Assisted Deposition on Ti6Al4V Alloy

    Directory of Open Access Journals (Sweden)

    Petr Vlcak

    2016-01-01

    Full Text Available The microstructure and the surface properties of samples coated by carbon-based nanolayer were investigated in an effort to increase the surface hardness and reduce the coefficient of friction of the Ti6Al4V alloy. Protective carbon-based nanolayers were fabricated by argon or nitrogen ion-beam assisted deposition at ion energy of 700 eV on Ti6Al4V substrates. The Raman spectra indicated that nanolayers had a diamond-like carbon character with sp2 rich bonds. The TiC and TiN compounds formed in the surface area were detected by X-ray diffraction. Nanoscratch tests showed increased adhesion of a carbon-based nanolayer deposited with ion assistance in comparison with a carbon nanolayer deposited without ion assistance. The results showed that argon ion assistance leads to greater nanohardness than a sample coated by a carbon-based nanolayer with nitrogen ion assistance. A more than twofold increase in nanohardness and a more than fivefold decrease in the coefficient of friction were obtained for samples coated by a carbon-based nanolayer with ion assistance, in comparison with the reference sample.

  5. Reel-to-reel preparation of ion-beam assisted deposition (IBAD)-MgO based coated conductors

    International Nuclear Information System (INIS)

    We report on our efforts in developing and scaling-up the systems for IBAD-MgO based coated conductor fabrication. The overall fabrication process involves a number of different processes including: electropolishing of the substrates; barrier-layer, seed-layer, and IBAD-MgO deposition by e-beam evaporation; and pulsed laser deposition of buffer and YBCO layers. All processes are realized in reel-to-reel processing systems. Latest results have shown that the IBAD-MgO approach yields coated conductor performance comparable to the best results achieved elsewhere to date

  6. Reel-to-reel preparation of ion-beam assisted deposition (IBAD)-MgO based coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Kreiskott, Sascha; Arendt, Paul N; Coulter, J Yates; Dowden, Paul C; Foltyn, Stephen R; Gibbons, Brady J; Matias, Vladimir; Sheehan, Chris J [Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2004-05-01

    We report on our efforts in developing and scaling-up the systems for IBAD-MgO based coated conductor fabrication. The overall fabrication process involves a number of different processes including: electropolishing of the substrates; barrier-layer, seed-layer, and IBAD-MgO deposition by e-beam evaporation; and pulsed laser deposition of buffer and YBCO layers. All processes are realized in reel-to-reel processing systems. Latest results have shown that the IBAD-MgO approach yields coated conductor performance comparable to the best results achieved elsewhere to date.

  7. The Effect of Annealing on the Structural and Optical Properties of Titanium Dioxide Films Deposited by Electron Beam Assisted PVD

    Directory of Open Access Journals (Sweden)

    Yaser M. Abdulraheem

    2013-01-01

    Full Text Available Titanium dioxide thin films were deposited on crystalline silicon substrates by electron beam physical vapor deposition. The deposition was performed under vacuum ranging from 10−5 to 10−6 Torr without process gases, resulting in homogeneous TiO2-x layers with a thickness of around 100 nm. Samples were then annealed at high temperatures ranging from 500°C to 800°C for 4 hours under nitrogen, and their structural and optical properties along with their chemical structure were characterized before and after annealing. The chemical and structural characterization revealed a substoichiometric TiO2-x film with oxygen vacancies, voids, and an interface oxide layer. It was found from X-ray diffraction that the deposited films were amorphous and crystallization to anatase phase occurred for annealed samples and was more pronounced for annealing temperatures above 700°C. The refractive index obtained through spectroscopic ellipsometry ranged between 2.09 and 2.37 in the wavelength range, 900 nm to 400 nm for the as-deposited sample, and jumped to the range between 2.23 and 2.65 for samples annealed at 800°C. The minimum surface reflectance changed from around 0.6% for the as-deposited samples to 2.5% for the samples annealed at 800°C.

  8. Tool steel ion beam assisted nitrocarburization

    Energy Technology Data Exchange (ETDEWEB)

    Zagonel, L.F. [Instituto de Fisica ' Gleb Wataghin' , Universidade Estadual de Campinas, Unicamp, 13083-970 Campinas, Sao Paulo (Brazil)], E-mail: zagonel@ifi.unicamp.br; Alvarez, F. [Instituto de Fisica ' Gleb Wataghin' , Universidade Estadual de Campinas, Unicamp, 13083-970 Campinas, Sao Paulo (Brazil)

    2007-09-15

    The nitrocarburization of the AISI-H13 tool steel by ion beam assisted deposition is reported. In this technique, a carbon film is continuously deposited over the sample by the ion beam sputtering of a carbon target while a second ion source is used to bombard the sample with low energy nitrogen ions. The results show that the presence of carbon has an important impact on the crystalline and microstructural properties of the material without modification of the case depth.

  9. Tool steel ion beam assisted nitrocarburization

    International Nuclear Information System (INIS)

    The nitrocarburization of the AISI-H13 tool steel by ion beam assisted deposition is reported. In this technique, a carbon film is continuously deposited over the sample by the ion beam sputtering of a carbon target while a second ion source is used to bombard the sample with low energy nitrogen ions. The results show that the presence of carbon has an important impact on the crystalline and microstructural properties of the material without modification of the case depth

  10. Ion-beam-assisted deposition of biaxially aligned yttria-stabilized zirconia template films on metallic substrates for YBCO-coated conductors

    Science.gov (United States)

    Ma, B.; Li, M.; Fisher, B. L.; Balachandran, U.

    2002-07-01

    Biaxially textured yttria-stabilized zirconia (YSZ) films were grown on mechanically polished Hastelloy C276 (HC) substrates by ion-beam-assisted deposition and electron-beam evaporation. The surface root-mean-square (RMS) roughness of the polished HC substrates was ≈3 nm, as measured by atomic force microscopy (AFM). A water-cooled sample stage was used to hold the substrate temperature below 100 °C during deposition. RMS roughness of ≈3.3 nm was measured on the deposited YSZ films by AFM. X-ray pole figures were conducted for texture analysis; in-plane texture measured from YSZ (111) φ-scan FWHM was 13.2° and out-of-plane texture from the YSZ (002) ω-scan FWHM was 7.7°. An ≈10 nm thick CeO2 buffer layer was deposited on the YSZ film at 800 °C before YBCO films were ablated by pulsed laser deposition at 780 °C in a 250 mTorr flowing oxygen environment. Good in-plane texture with FWHM ≈ 7° was observed in YBCO films. Tc = 90 K, with sharp transition, and transport Jc of ≈2.2 × 106 A cm-2 were observed in a 0.5 μm thick, 5 mm wide, and 1 cm long sample at 77 K in self-field.

  11. Ion-beam-assisted deposition of biaxially aligned yttria-stabilized zirconia template films on metallic substrates for YBCO-coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Ma, B. [Energy Technology Division, Argonne National Laboratory, Argonne, IL (United States)]. E-mail: bma@anl.gov; Li, M.; Fisher, B.L.; Balachandran, U. [Energy Technology Division, Argonne National Laboratory, Argonne, IL (United States)

    2002-07-01

    Biaxially textured yttria-stabilized zirconia (YSZ) films were grown on mechanically polished Hastelloy C276 (HC) substrates by ion-beam-assisted deposition and electron-beam evaporation. The surface root-mean-square (RMS) roughness of the polished HC substrates was {approx}3 nm, as measured by atomic force microscopy (AFM). A water-cooled sample stage was used to hold the substrate temperature below 100 deg. C during deposition. RMS roughness of {approx}3.3 nm was measured on the deposited YSZ films by AFM. X-ray pole figures were conducted for texture analysis; in-plane texture measured from YSZ (111) {phi}-scan FWHM was 13.2 deg. and out-of-plane texture from the YSZ (002) {omega}-scan FWHM was 7.7 deg. An {approx}10 nm thick CeO{sub 2} buffer layer was deposited on the YSZ film at 800 deg. C before YBCO films were ablated by pulsed laser deposition at 780 deg. C in a 250 mTorr flowing oxygen environment. Good in-plane texture with FWHM {approx}7 deg. was observed in YBCO films. T{sub c} 90 K, with sharp transition, and transport J{sub c} of {approx}2.2x10{sup 6} A cm{sup -2} were observed in a 0.5 {mu}m thick, 5 mm wide, and 1 cm long sample at 77 K in self-field. (author)

  12. Ion-beam-assisted deposition of biaxially aligned yttria-stabilized zirconia template films on metallic substrates for YBCO-coated conductors

    International Nuclear Information System (INIS)

    Biaxially textured yttria-stabilized zirconia (YSZ) films were grown on mechanically polished Hastelloy C276 (HC) substrates by ion-beam-assisted deposition and electron-beam evaporation. The surface root-mean-square (RMS) roughness of the polished HC substrates was ∼3 nm, as measured by atomic force microscopy (AFM). A water-cooled sample stage was used to hold the substrate temperature below 100 deg. C during deposition. RMS roughness of ∼3.3 nm was measured on the deposited YSZ films by AFM. X-ray pole figures were conducted for texture analysis; in-plane texture measured from YSZ (111) φ-scan FWHM was 13.2 deg. and out-of-plane texture from the YSZ (002) ω-scan FWHM was 7.7 deg. An ∼10 nm thick CeO2 buffer layer was deposited on the YSZ film at 800 deg. C before YBCO films were ablated by pulsed laser deposition at 780 deg. C in a 250 mTorr flowing oxygen environment. Good in-plane texture with FWHM ∼7 deg. was observed in YBCO films. Tc 90 K, with sharp transition, and transport Jc of ∼2.2x106 A cm-2 were observed in a 0.5 μm thick, 5 mm wide, and 1 cm long sample at 77 K in self-field. (author)

  13. Influence of a thin interfacial oxide layer on the ion beam assisted epitaxial crystallization of deposited Si

    Science.gov (United States)

    Priolo, F.; La Ferla, A.; Spinella, C.; Rimini, E.; Ferla, G.; Baroetto, F.; Licciardello, A.

    1988-12-01

    The epitaxial crystallization of chemical vapor deposited Si layers on Si substrates with a thin interfacial oxide layer was induced by a 600 keV Kr beam in the temperature range 350-500 °C. During irradiation the single crystal-amorphous interface velocity was measured in situ by monitoring the reflectivity of He-Ne laser light. We show that a critical irradiation dose is needed before the interfacial oxide breaks down and epitaxial regrowth can take place. This critical dose depends exponentially on the reciprocal temperature with an activation energy of 0.44 eV.

  14. Application of dynamic scaling theory for growth kinetic studies of AlN-thin films deposited by ion beam sputtering in reactive assistance of nitrogen plasma

    International Nuclear Information System (INIS)

    Highlights: • Growth kinetics of ion beam sputtered AlN-thin films by dynamic scaling theory. • AFM measurements show different morphologies due to varying deposition times 3, 5, 8 and 15 min. • Growth governing static (α) and dynamic (β) scaling exponents were determined in each case. • Four smoothening/roughening mechanisms are plastic flow, evaporation-recondensation, bulk-diffusion and surface diffusion. • Removal of over-hanging atoms, near surface defects, surface collision cascade and assistive ion-induced dissociation of clusters are the responsible phenomenona for the transition between different growth stages. - Abstract: Ion beam sputter deposition of AlN thin films to different time scales was carried out in reactive assistance of N+/N2+ ions. The incipient stages of the growth morphology were characterized using atomic force microscopy. Dynamic scaling theory was invoked to analyze the evolution of surface roughness and the growth mechanism therein. Two distinct exponents ‘α’ (static) and ‘β’ (dynamic) were used to unravel the film growth characteristics. Our results show that as the deposition time (t) increases, ‘α’ decreases gradually and substrate surface coverage increases indicated by a decrease in critical length Lc. Dynamic scaling exponent ‘β’ was estimated to be 0.36 for the deposition from isolated nuclei to full surface coverage of the substrate. During the growth, rms roughness of the film was increased from 1.99 to 3.42 nm as the deposition time was increased from 3 min to 15 min. Surface diffusion becomes the major roughening phenomenon while bulk diffusion subside it at each stage by smoothening to yield corresponding rms roughness

  15. Growth modes and epitaxy of FeAl thin films on a-cut sapphire prepared by pulsed laser and ion beam assisted deposition

    International Nuclear Information System (INIS)

    FeAl films around equiatomic composition are grown on a-cut (112¯0) sapphire substrates by ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD) at ambient temperature. Subsequent successive annealing is used to establish chemical order and crystallographic orientation of the films with respect to the substrate. We find a strongly [110]-textured growth for both deposition techniques. Pole figures prove the successful preparation of high quality epitaxial films by PLD with a single in-plane orientation. IBAD-grown films, however, exhibit three in-plane orientations, all of them with broad angular distributions. The difference of the two growth modes is attributed to the existence of a metastable intermediate crystalline orientation as concluded from nonassisted sputter depositions at different substrate temperatures. The formation of the chemically ordered crystalline B2 phase is accompanied by the expected transition from ferromagnetic to paramagnetic behavior of the films. In accordance with the different thermally induced structural recovery, we find a step-like magnetic transition to paramagnetic behavior after annealing for 1 h at TA = 300 °C for IBAD deposition, while PLD-grown films show a gradual decrease of ferromagnetic signals with rising annealing temperatures

  16. Improvement and characterization of high-reflective and anti-reflective nanostructured mirrors by ion beam assisted deposition for 944 nm high power diode laser

    Science.gov (United States)

    Ghadimi-Mahani, A.; Farsad, E.; Goodarzi, A.; Tahamtan, S.; Abbasi, S. P.; Zabihi, M. S.

    2015-11-01

    Single-layer and multi-layer coatings were applied on the surface of diode laser facets as mirrors. This thin film mirrors were designed, deposited, optimized and characterized. The effects of mirrors on facet passivation and optical properties of InGaAs/AlGaAs/GaAs diode lasers were investigated. High-Reflective (HR) and Anti-Reflective (AR) mirrors comprising of four double-layers of Al2O3/Si and a single layer of Al2O3, respectively, were designed and optimized by Macleod software for 944 nm diode lasers. Optimization of Argon flow rate was studied through Alumina thin film deposition by Ion Beam Assisted Deposition (IBAD) for mirror improvement. The nanostructured HR and AR mirrors were deposited on the front and back facet of the laser respectively, by IBAD system under optimum condition. Atomic Force Microscope (AFM), Vis-IR Spectrophotometer, Field Emission Scanning Electron Microscopy (FESEM) and laser characterization Test (P-I) were used to characterize various properties of mirrors and lasers. AFM images show mirror's root mean square roughness is nearly 1 nm. The Spectrophotometer results of the front facet transmission and the back facet reflection are in good agreement with the simulation results. Optical output power (P) versus driving current (I) characteristics, measured before and after coating the facet, revealed a significant output power enhancement due to optimized AR and HR optical coatings on facets.

  17. Ion beam assisted film growth

    CERN Document Server

    Itoh, T

    2012-01-01

    This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

  18. On the mechanisms of the formation of nanocrystalline Cr-N and V-N coatings upon ion-beam-assisted deposition

    Science.gov (United States)

    Guglya, A. G.

    2010-01-01

    The paper generalizes the results of investigations performed at the Kharkov Institute of Physics and Technology, National Scientific Center, aimed at the development and analysis of nanocrystalline Cr-N and V-N coatings produced by the method of ion-beam-assisted deposition (IBAD method). The effect of temperature of the process and the ratio between its ionic and atomic components (N+/Cr, V) on the resistivity of the coatings has been studied. It has been found that the ion-assisted irradiation leads to the formation of nanocrystalline nitride structures, whose phase composition depends not only on the concentration of nitrogen implanted by the ion beam, but also on the amount of the physical adsorption of nitrogen, including its adsorption from the residual atmosphere. It has been shown that the IBAD method can be used for both production of dense nanocrystalline composites and creation of nanoporous structures. It has been found that the grain size, the internal porosity, and the electrophysical characteristics of the coatings are intimately connected with the Gibbs energy of the nitride phases. The mechanisms responsible for the formation of such coatings have been discussed in terms of the thermodynamics of the nitride-formation process.

  19. Effects of calcium phosphate coating to SLA surface implants by the ion-beam-assisted deposition method on self-contained coronal defect healing in dogs

    International Nuclear Information System (INIS)

    The aim of this study was to evaluate the healing of self-contained coronal defects on a sand-blasted, large-grit, acid-etched (SLA) surface implant, which had a calcium phosphate (CaP) coating applied by ion-beam-assisted deposition (IBAD). We also evaluated the effect of heating the coating to different temperatures. The CaP-coated SLA implants exhibited a slightly larger bone healing capacity in the self-contained coronal defect than SLA implants, indicating that combining SLA surface implants and a CaP coating by the IBAD method had synergistic effects on bone healing. There was no difference in the healing capacity between 350 deg. C and 450 deg. C heat treatment of the coating layer.

  20. Effects of calcium phosphate coating to SLA surface implants by the ion-beam-assisted deposition method on self-contained coronal defect healing in dogs

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Heun-Joo; Song, Ji-Eun; Um, Yoo-Jung; Chae, Gyung Joon; Jung, Ui-Won; Kim, Chang-Sung; Choi, Seong-Ho [Department of Periodontology, Research Institute for Periodontal Regeneration, College of Dentistry, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul 120-752 (Korea, Republic of); Chung, Sung-Min [Dentium Co., Seoul (Korea, Republic of); Lee, In-Seop, E-mail: shchoi726@yuhs.a [Institute of Physics and Applied Physics, Atomic-scale Surface Science Research Center, Yonsei University, Seoul (Korea, Republic of)

    2009-08-15

    The aim of this study was to evaluate the healing of self-contained coronal defects on a sand-blasted, large-grit, acid-etched (SLA) surface implant, which had a calcium phosphate (CaP) coating applied by ion-beam-assisted deposition (IBAD). We also evaluated the effect of heating the coating to different temperatures. The CaP-coated SLA implants exhibited a slightly larger bone healing capacity in the self-contained coronal defect than SLA implants, indicating that combining SLA surface implants and a CaP coating by the IBAD method had synergistic effects on bone healing. There was no difference in the healing capacity between 350 deg. C and 450 deg. C heat treatment of the coating layer.

  1. Characterisation of Pristine and Recoated electron beam evaporation plasma-assisted physical vapour deposition Cr-N coatings on AISI M2 steel and WC-Co substrates

    International Nuclear Information System (INIS)

    This paper is focussed on the characterisation of electron beam evaporation plasma-assisted physical vapour deposition Cr-N coatings deposited on AISI M2 steel and hardmetal (K10) substrates in two different conditions: Pristine (i.e., coated) and Recoated (i.e., stripped and recoated). Analytical methods, including X-ray diffraction (XRD), scanning electron microscopy, scratch adhesion and pin-on-disc tests were used to evaluate several coating properties. XRD analyses indicated that both Pristine and Recoated coatings consisted of a mixture of hexagonal Cr2N and cubic CrN, regardless of substrate type. For the M2 steel substrate, only small differences were found in terms of coating phases, microstructure, adhesion, friction and wear coefficients between Pristine and Recoated. Recoated on WC-Co (K10) exhibited a less dense microstructure and significant inferior adhesion compared to Pristine on WC-Co (K10). The wear coefficient of Recoated on WC-Co was 100 times higher than those exhibited by all other specimens. The results obtained confirm that the stripping process did not adversely affect the Cr-N properties when this coating was deposited onto M2 steel substrates, but it is clear from the unsatisfactory tribological performance of Recoated on WC-Co that the stripping process is unsuitable for hardmetal substrates

  2. Stoichiometry and characterization of aluminum oxynitride thin films grown by ion-beam-assisted pulsed laser deposition

    International Nuclear Information System (INIS)

    Oxides are inherently stable in air at elevated temperatures and may serve as wear resistant matrices for solid lubricants. Aluminum oxide is a particularly good candidate for a matrix because it has good diffusion barrier properties and modest hardness. Most thin film deposition techniques that are used to grow alumina require high temperatures to impart crystallinity. Crystalline films are about twice as hard as amorphous ones. Unfortunately, the mechanical properties of most engineering steels are degraded at temperatures above 250-350 deg. C. This work is focused on using energetic reactive ion bombardment during simultaneous pulsed laser deposition to enhance film crystallization at low temperatures. Alumina films were grown at several background gas pressures and temperatures, with and without Ar ion bombardment. The films were nearly stoichiometric except for depositions in vacuum. Using nitrogen ion bombardment, nitrogen was incorporated into the films and formed the Al-O-N matrix. Nitrogen concentration could be controlled through selection of gas pressure and ion energy. Crystalline Al-O-N films were grown at 330 deg. C with a negative bias voltage to the substrate, and showed improved hardness in comparison to amorphous films

  3. Networks of ultra-fine Ag nanocrystals in a Teflon AF (registered) matrix by vapour phase e-beam-assisted deposition

    International Nuclear Information System (INIS)

    We have fabricated nanocomposite thin films comprising silver (Ag) nanoparticles dispersed in a Teflon AF (registered) polymer matrix using electron-beam-assisted physical vapour deposition. Four different Ag nanoparticle volume fillings (20%, 35%, 70% and 75%) were achieved by varying the relative metal-polymer evaporation rates with the formation of highly crystalline Ag nanoparticles regardless of the filling ratio. The present fabrication technique allowed full control over dispersion uniformity of nanoparticles in the polymer network. At 20% and 35% metal volume fillings, the nanocomposite film morphology consists of a uniformly dispersed assembly of equiaxed isolated Ag nanoparticles. At higher metal volume fractions the nanocomposite structures displayed two different and unique Ag nanoparticle arrangements within the polymer matrix. In particular, at 70% metal filling, the formation of irregularly shaped clusters of individually assembled nanocrystals was observed. At a slightly higher volume filling (75%), larger irregularly shaped Ag nanocrystals that appeared to be the result of coalescence and grain growth were observed. Finally, a composite theory developed by Tandon and Weng was used to estimate various elastic properties of the nanocomposite films. At high metal filling, the reinforcing effect of the Ag nanoparticles was reflected as approximately a sixfold increase in the elastic modulus compared to the virgin polymer film. Possible applications of such ultra-fine metal nanoparticles networks are discussed

  4. Effect of temperature on residual stress and mechanical properties of Ti films prepared by both ion implantation and ion beam assisted deposition

    International Nuclear Information System (INIS)

    Ti films with a thickness of 1.6 μm (group A) and 4.6 μm (group B) were prepared on surface of silicon crystal by metal vapor vacuum arc (MEVVA) ion implantation combined with ion beam assisted deposition (IBAD). Different anneal temperatures ranging from 100 to 500 deg. C were used to investigate effect of temperature on residual stress and mechanical properties of the Ti films. X-ray diffraction (XRD) was used to measure residual stress of the Ti films. The morphology, depth profile, roughness, nanohardness, and modulus of the Ti films were measured by scanning electron microscopy (SEM), scanning Auger nanoprobe (SAN), atomic force microscopy (AFM), and nanoindentation, respectively. The experimental results suggest that residual stress was sensitive to film thickness and anneal temperature. The critical temperatures of the sample groups A and B that residual stress changed from compressive to tensile were 404 and 428 deg. C, respectively. The mean surface roughness and grain size of the annealed Ti films increased with increasing anneal temperature. The values of nanohardness and modulus of the Ti films reached their maximum values near the surface, then, reached corresponding values with increasing depth of the indentation. The mechanism of stress relaxation of the Ti films is discussed in terms of re-crystallization and difference of coefficient of thermal expansion between Ti film and Si substrate.

  5. On Generation and Propagation of the Plasma Ion Beam for Plasma Ion Assisted Deposition (PIAD) of Optical Coatings

    Science.gov (United States)

    Harhausen, J.; Brinkmann, R. P.; Foest, R.; Ohl, A.; Schröder, B.

    2011-10-01

    PIAD is a technique employed for the production of high performance optical coatings. Here, the plasma source is a hot cathode direct current discharge with an auxiliary magnetic field (APS). Its specific design together with a low chamber pressure of p ~ 2 .10-4mbar results in the generation of energetic ions (typ. Ei = 50 . . 150eV) impinging onto the substrates. Until today, data on the plasma parameters in the coating chamber is sparse. This contribution presents details on the energy distribution functions (EDF) of electrons and ions in the strongly inhomogeneous APS plume using Langmuir probe and retarding field energy analyzer diagnostics. The IEDF is characterized by two separate populations of low and high energy. An analytical model for the evolution of the ion beam reveals that the slow ion component is due to charge exchange of fast ions with the background neutral gas. This model is indispensable for the estimation of the NEDF. Funded by the German Ministry for Education and Research (BMBF, Fkz. 13N10462).

  6. Core and grain boundary sensitivity of tungsten-oxide sensor devices by molecular beam assisted particle deposition

    Science.gov (United States)

    Huelser, T. P.; Lorke, A.; Ifeacho, P.; Wiggers, H.; Schulz, C.

    2007-12-01

    In this study, we investigate the synthesis of WO3 and WOx (2.6≥x≤2.8) by adding different concentrations of tungsten hexafluoride (WF6) into a H2/O2/Ar premixed flame within a low-pressure reactor equipped with a particle-mass spectrometer (PMS). The PMS results show that mean particle diameters dp between 5 and 9 nm of the as-synthesized metal-oxides can be obtained by varying the residence time and precursor concentration in the reactor. This result is further validated by N2 adsorption measurements on the particle surface, which yielded a 91 m2/g surface area, corresponding to a spherical particle diameter of 9 nm (Brunauer-Emmett-Teller technique). H2/O2 ratios of 1.6 and 0.63 are selected to influence the stoichiometry of the powders, resulting in blue-colored WOx and white WO3 respectively. X-ray diffraction (XRD) analysis of the as-synthesized materials indicates that the powders are mostly amorphous, and the observed broad reflexes can be attributed to the orthorhombic structure of β-WO3. Thermal annealing at 973 K for 3 h in air resulted in crystalline WO3 comprised of both monoclinic and orthorhombic phases. The transmission electron microscope micrograph analysis shows that the particles exhibit spherical morphology with some degree of agglomeration. Impedance spectroscopy is used for the electrical characterization of tungsten-oxide thin films with a thickness of 50 nm. Furthermore, the temperature-dependent gas-sensing properties of the material deposited on interdigital capacitors are investigated. Sensitivity experiments reveal two contributions to the overall sensitivity, which result from the surface and the core of each particle.

  7. Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Jian-ping [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Fu, Zhi-qiang, E-mail: fuzq@cugb.edu.cn [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Xiao-peng [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Yue, Wen; Wang, Cheng-biao [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China)

    2014-10-30

    Highlights: • AlN films were fabricated by dual ion beam sputtering. • Chemical bond status and phase composition of the films were studied by XPS and XRD. • Optical constants were measured by spectroscopic ellipsometry. • Influence of ion/atom arrival ratio on the films was studied. - Abstract: In order to improve the optical properties of AlN films, the influence of the ion/atom arrival ratio on the structure and optical characteristics of AlN films deposited by dual ion beam sputtering was studied by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The films prepared at the ion/atom arrival ratio of 1.4 are amorphous while the crystalline quality is improved with the increase of the ion/atom arrival ratio. The films deposited at the ion/atom arrival ratio of no less than 1.8 have an approximately stoichiometric ratio and mainly consist of aluminum nitride with little aluminum oxynitride, while metallic aluminum component appears in the films deposited at the ion/atom arrival ratio of 1.4. When the ion/atom arrival ratio is not less than 1.8, films are smooth, high transmitting and dense. The films prepared with high ion/atom arrival ratio (≥1.8) display the characteristic of a dielectric. The films deposited at the ion/atom arrival ratio of 1.4 are coarse, opaque and show characteristic of cermet.

  8. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Aronne, Antonio [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Bloisi, Francesco, E-mail: bloisi@na.infn.it [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy); Calabria, Raffaela; Califano, Valeria [Istituto Motori – CNR, Naples (Italy); Depero, Laura E. [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Fanelli, Esther [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Federici, Stefania [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Massoli, Patrizio [Istituto Motori – CNR, Naples (Italy); Vicari, Luciano R.M. [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy)

    2015-05-01

    Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

  9. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    International Nuclear Information System (INIS)

    Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence

  10. Ion assisted methods of deposition of SiC

    International Nuclear Information System (INIS)

    This study describes attempts to synthesize thin SiC films by using a variety of ion beam processing routes at non-elevated temperature. SiC is one of the most widely investigated materials because it has many attractive properties. A main objective of this investigation was to compare and contrast different methods of ion assistance for deposition of SiC films and to attempt to grow functionally gradient films. Three approaches were employed. (1) Silicone oil vapour deposition under concurrent argon ion irradiation in which silicone vapour was decomposed and adsorbed on the substrate. (2) Dual ion beam deposition in which two argon ion beams were employed, with one sputtering a silicon target to provide a Si flux, and the other bombarding the substrate on which films grow. Methane and ethene gas were introduced into the system with a partial pressure up to 1.8 x 10-2Pa. The energy of the sputtering beam was around 1 keV, whilst the bombarding beam energies were altered from 0 to 500 eV. (3) Dual target sputtering in which the target consisted of carbon and silicon. The different area ratios of carbon and silicon targets were investigated. (Author)

  11. Polymer-assisted deposition of films

    Science.gov (United States)

    McCleskey,Thomas M.; Burrell,Anthony K.; Jia,Quanxi; Lin,Yuan

    2012-02-28

    A polymer assisted deposition process for deposition of metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be conformal on a variety of substrates including non-planar substrates. In some instances, the films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  12. Ion-Bombardment of X-Ray Multilayer Coatings - Comparison of Ion Etching and Ion Assisted Deposition

    NARCIS (Netherlands)

    Puik, E. J.; van der Wiel, M. J.; Zeijlemaker, H.; Verhoeven, J.

    1991-01-01

    The effects of two forms of ion bombardment treatment on the reflectivity of multilayer X-ray coatings were compared: ion etching of the metal layers, taking place after deposition, and ion bombardment during deposition, the so-called ion assisted deposition. The ion beam was an Ar+ beam of 200 eV,

  13. The Effects of Annealing and Discharging on the Characteristics of MgO Thin Films Prepared by Ion Beam-Assisted Deposition as a Protective Layer of AC-PDP

    Institute of Scientific and Technical Information of China (English)

    YU Zhinong; SUN Jian; XUE Wei; ZHENG Dexiu

    2007-01-01

    This study investigated the effects of annealing and discharging on the characteristics of MgO thin films prepared by ion beam-assisted deposition as a protective layer of AC-PDP. By an annealing process at a temperature of 450 °C for more than three hours, the crystallinity of the deposited MgO films was improved, but the surface of the (200)-oriented MgO thin films in the vicinity of the discharge electrodes, especially on the inner sides of the electrodes, was subjected to crack formation. The failure mechanism of the (200)-oriented MgO films was due to the compressive stress of MgO films plus the additional compressive stress induced by the differences in the coefficient of thermal expansion between the electrode and the dielectric layer. In the discharging process, all MgO films were eroded unevenly, and the serious erosion occurred near the edges of the discharge electrodes. ATM(atomic force microscopy) images show that the eroded surface of the (200)-oriented MgO thin film is smoother than that of the (lll)-oriented film. Also, the (200)-oriented MgO thin film shows an improved ability to resist ion erosion compared to the (lll)-oriented film.

  14. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    Science.gov (United States)

    Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R. M.

    2015-05-01

    Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

  15. Stress in ion-beam assisted silicon dioxide and tantalum pentoxide thin films

    CERN Document Server

    Sirotkina, N

    2003-01-01

    Ta sub 2 O sub 5 and SiO sub 2 thin films, deposited at room temperature by ion-beam sputtering (IBS) and dual ion-beam sputtering (DIBS), and SiO sub 2 films, deposited by reactive e-beam evaporation and ion-assisted deposition, were studied. The energy (150-600 eV) and ion-to-atom arrival ratio (0.27-2.0) of assisting argon and oxygen ions were varied. Influence of deposition conditions (deposition system geometry, nature and amount of gas in the chamber, substrate cleaning and ion-assistance parameters) on films properties (stress, composition, refractive index n sub 5 sub 0 sub 0 sub n sub m and extinction coefficient k sub 5 sub 0 sub 0 sub n sub m) was investigated. A scanning method, based on substrate curvature measurements by laser reflection and stress calculation using the Stoney equation, was employed. RBS showed that stoichiometric Ta sub 2 O sub 5 films contain impurities of Ar, Fe and Mo. Stoichiometric SiO sub 2 films also contain Ta impurity. Argon content increases with ion bombardment and, ...

  16. Patterned electrochemical deposition of copper using an electron beam

    Directory of Open Access Journals (Sweden)

    Mark den Heijer

    2014-02-01

    Full Text Available We describe a technique for patterning clusters of metal using electrochemical deposition. By operating an electrochemical cell in the transmission electron microscope, we deposit Cu on Au under potentiostatic conditions. For acidified copper sulphate electrolytes, nucleation occurs uniformly over the electrode. However, when chloride ions are added there is a range of applied potentials over which nucleation occurs only in areas irradiated by the electron beam. By scanning the beam we control nucleation to form patterns of deposited copper. We discuss the mechanism for this effect in terms of electron beam-induced reactions with copper chloride, and consider possible applications.

  17. Electrostatic force assisted deposition of graphene

    Science.gov (United States)

    Liang, Xiaogan

    2011-11-15

    An embodiment of a method of depositing graphene includes bringing a stamp into contact with a substrate over a contact area. The stamp has at least a few layers of the graphene covering the contact area. An electric field is developed over the contact area. The stamp is removed from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.

  18. Plasma and Ion Assistance in Physical Vapor Deposition: A Historical Perspective

    OpenAIRE

    Anders, Andre

    2007-01-01

    Deposition of films using plasma or plasma-assist can be traced back surprisingly far, namely to the 18th century for arcs and to the 19th century for sputtering. However, only since the 1960s the coatings community considered other processes than evaporation for large scale commercial use. Ion Plating was perhaps the first important process, introducing vapor ionization and substrate bias to generate a beam of ions arriving on the surface of the growing film. Rather independently, catho...

  19. Microreactor-Assisted Solution Deposition for Compound Semiconductor Thin Films

    Directory of Open Access Journals (Sweden)

    Chang-Ho Choi

    2014-05-01

    Full Text Available State-of-the-art techniques for the fabrication of compound semiconductors are mostly vacuum-based physical vapor or chemical vapor deposition processes. These vacuum-based techniques typically operate at high temperatures and normally require higher capital costs. Solution-based techniques offer opportunities to fabricate compound semiconductors at lower temperatures and lower capital costs. Among many solution-based deposition processes, chemical bath deposition is an attractive technique for depositing semiconductor films, owing to its low temperature, low cost and large area deposition capability. Chemical bath deposition processes are mainly performed using batch reactors, where all reactants are fed into the reactor simultaneously and products are removed after the processing is finished. Consequently, reaction selectivity is difficult, which can lead to unwanted secondary reactions. Microreactor-assisted solution deposition processes can overcome this limitation by producing short-life molecular intermediates used for heterogeneous thin film synthesis and quenching the reaction prior to homogeneous reactions. In this paper, we present progress in the synthesis and deposition of semiconductor thin films with a focus on CdS using microreactor-assisted solution deposition and provide an overview of its prospect for scale-up.

  20. Patterned electrochemical deposition of copper using an electron beam

    OpenAIRE

    Mark den Heijer; Ingrid Shao; Alex Radisic; Reuter, Mark C.; Ross, Frances M.

    2014-01-01

    We describe a technique for patterning clusters of metal using electrochemical deposition. By operating an electrochemical cell in the transmission electron microscope, we deposit Cu on Au under potentiostatic conditions. For acidified copper sulphate electrolytes, nucleation occurs uniformly over the electrode. However, when chloride ions are added there is a range of applied potentials over which nucleation occurs only in areas irradiated by the electron beam. By scanning the beam we contro...

  1. Precursors for the polymer-assisted deposition of films

    Science.gov (United States)

    McCleskey, Thomas M.; Burrell, Anthony K.; Jia, Quanxi; Lin, Yuan

    2013-09-10

    A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  2. Calculation of neutral beam deposition accounting for excited states

    International Nuclear Information System (INIS)

    Large-scale neutral-beam auxillary heating of plasmas has led to new plasma operational regimes which are often dominated by fast ions injected via the absorption of an energetic beam of hydrogen neutrals. An accurate simulation of the slowing down and transport of these fast ions requires an intimate knowledge of the hydrogenic neutral deposition on each flux surface of the plasma. As a refinement to the present generation of transport codes, which base their beam deposition on ground-state reaction rates, a new set of routines, based on the excited states of hydrogen, is presented as mechanism for computing the attenuation and deposition of a beam of energetic neutrals. Additionally, the numerical formulations for the underlying atomic physics for hydrogen impacting on the constiuent plasma species is developed and compiled as a numerical database. Sample results based on this excited state model are compared with the ground-state model for simple plasma configurations

  3. Calculation of neutral beam deposition accounting for excited states

    Energy Technology Data Exchange (ETDEWEB)

    Gianakon, T.A.

    1992-09-01

    Large-scale neutral-beam auxillary heating of plasmas has led to new plasma operational regimes which are often dominated by fast ions injected via the absorption of an energetic beam of hydrogen neutrals. An accurate simulation of the slowing down and transport of these fast ions requires an intimate knowledge of the hydrogenic neutral deposition on each flux surface of the plasma. As a refinement to the present generation of transport codes, which base their beam deposition on ground-state reaction rates, a new set of routines, based on the excited states of hydrogen, is presented as mechanism for computing the attenuation and deposition of a beam of energetic neutrals. Additionally, the numerical formulations for the underlying atomic physics for hydrogen impacting on the constiuent plasma species is developed and compiled as a numerical database. Sample results based on this excited state model are compared with the ground-state model for simple plasma configurations.

  4. Processes leading to enhanced energy deposition by particle beams

    International Nuclear Information System (INIS)

    Range shortening of electron and proton beams due to target temperature and density effects is calculated. The effect on target hydrodynamics is calculated for a proton beam. The effect of the penetration of an electron beam self magnetic field into the target is shown to cause effective range shortening. Enhanced energy deposition by a pinched electron beam in a foil target is studied numerically and experimentally. The target expansion velocity measured by laser flash photography is used to determine the enhancement factor. Bremsstrahlung measurements are used to study the electron trajectories

  5. Ion beam deposition of calcium hydroxyapatite

    International Nuclear Information System (INIS)

    Calcium hydroxyapatite has been sputtered on glass and Ti-6Al-4V substrates using a 1.5 kV argon ion beam. The films have been examined by X- ray diffraction analysis, energy dispersive spectroscopy, scanning electron microscopy, and adhesion testing. Results of this experimentation are presented

  6. Use of beam deflection to control an electron beam wire deposition process

    Science.gov (United States)

    Taminger, Karen M. (Inventor); Hofmeister, William H. (Inventor); Hafley, Robert A. (Inventor)

    2013-01-01

    A method for controlling an electron beam process wherein a wire is melted and deposited on a substrate as a molten pool comprises generating the electron beam with a complex raster pattern, and directing the beam onto an outer surface of the wire to thereby control a location of the wire with respect to the molten pool. Directing the beam selectively heats the outer surface of the wire and maintains the position of the wire with respect to the molten pool. An apparatus for controlling an electron beam process includes a beam gun adapted for generating the electron beam, and a controller adapted for providing the electron beam with a complex raster pattern and for directing the electron beam onto an outer surface of the wire to control a location of the wire with respect to the molten pool.

  7. Plasma-assisted directed vapor deposition for synthesizing lithium phosphorus oxynitride thin films

    Science.gov (United States)

    Kim, Yoon Gu

    This dissertation explores a new vapor deposition route for synthesizing lithium phosphorus oxynitride (Lipon) thin-film electrolytes for rechargeable thin-film Li/Li-ion batteries. These batteries operate at a high voltage (around 4.0 V) and exhibit a long cyclic life (over 10,000 charge/discharge cycles). These features stem from the extremely low leakage current of the Lipon film electrolyte when in contact with a lithium anode, and its good Li-ion conductivity (in the 10-6-10-7 S/cm range). Lipon films have usually been synthesized by reactive RF-magnetron sputtering, which suffers from a very low deposition rate (˜2 nm/min). It therefore takes many hours to make the 1-2 mum thick films needed for battery applications. Other deposition approaches, such as Pulsed Laser Deposition, Ion Beam Assisted Deposition, and E-beam evaporation, have been investigated but resulted in unsatisfactory Lipon film performance. Here, a plasma-assisted directed vapor deposition (PA-DVD) approach has been explored to synthesize dense, amorphous Lipon films. Unlike conventional e-beam evaporation, the e-beam based DVD approach employs an annular nozzle to generate a rarefied supersonic inert gas jet around the periphery of an electron beam evaporated source material. The vapor is entrained in the jet and rapidly transferred to a substrate. Because the supersonic gas jet focuses the vapor (it impedes lateral spreading of the vapor flux), most of the evaporant reaches the substrate. As a result, the deposition rate of Lipon films can be potentially much higher than most other processes. The PA-DVD approach used here employs a hollow cathode to create low-energy plasma through which the vapor is propagated. This plasma ionized some of the evaporant and reactive gases (nitrogen) that were added to the jet. This increased their reactivity and atomic mobility on a substrate enabling the reactive synthesis of lithium phosphorus oxynitride from a lithium phosphate source. This dissertation

  8. Hydrogenated amorphous silicon deposited by ion-beam sputtering

    Science.gov (United States)

    Lowe, V. E.; Henin, N.; Tu, C.-W.; Tavakolian, H.; Sites, J. R.

    1981-01-01

    Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

  9. Direct deposition of gold on silicon with focused ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Irradiation with ions at very low energies (below 500 eV) no longer induces a removal of substrate material, but the ions are directly deposited on the surface. In this way, gold has been deposited on silicon with focused ion beam exposure and the properties of the film have been investigated with atomic force microscopy and Auger electron spectroscopy. (author) 3 figs., 1 ref.

  10. Nanopillar growth by focused helium ion-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen Ping; Salemink, Huub W M; Alkemade, Paul F A [Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft (Netherlands); Veldhoven, Emile van; Maas, Diederik J [TNO Science and Industry, Stieltjesweg 1, 2628 CK Delft (Netherlands); Sanford, Colin A [Carl Zeiss SMT, Inc., One Corporation Way, Peabody, MA 01960 (United States); Smith, Daryl A; Rack, Philip D, E-mail: p.f.a.alkemade@tudelft.nl [Department of Material Science and Engineering, University of Tennessee, Knoxville, TN 37996-2200 (United States)

    2010-11-12

    A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH{sub 3}){sub 3}Pt(C{sub P}CH{sub 3}) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that electronic excitation is the dominant mechanism in helium ion-beam-induced deposition. Pillars grown at low beam currents are narrow and have sharp tips. For a constant dose, the pillar height decreases with increasing current, pointing to depletion of precursor molecules at the beam impact site. Furthermore, the diameter increases rapidly and the total pillar volume decreases slowly with increasing current. Monte Carlo simulations have been performed with realistic values for the fundamental deposition processes. The simulation results are in good agreement with experimental observations. In particular, they reproduce the current dependences of the vertical and lateral growth rates and of the volumetric deposition efficiency. Furthermore, the simulations reveal that the vertical pillar growth is due to type-1 secondary electrons and primary ions, while the lateral outgrowth is due to type-2 secondary electrons and scattered ions.

  11. Nanopillar growth by focused helium ion-beam-induced deposition

    International Nuclear Information System (INIS)

    A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH3)3Pt(CPCH3) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that electronic excitation is the dominant mechanism in helium ion-beam-induced deposition. Pillars grown at low beam currents are narrow and have sharp tips. For a constant dose, the pillar height decreases with increasing current, pointing to depletion of precursor molecules at the beam impact site. Furthermore, the diameter increases rapidly and the total pillar volume decreases slowly with increasing current. Monte Carlo simulations have been performed with realistic values for the fundamental deposition processes. The simulation results are in good agreement with experimental observations. In particular, they reproduce the current dependences of the vertical and lateral growth rates and of the volumetric deposition efficiency. Furthermore, the simulations reveal that the vertical pillar growth is due to type-1 secondary electrons and primary ions, while the lateral outgrowth is due to type-2 secondary electrons and scattered ions.

  12. Controllable deposition of gadolinium doped ceria electrolyte films by magnetic-field-assisted electrostatic spray deposition

    International Nuclear Information System (INIS)

    This paper describes a simple and low-temperature approach to fabrication of dense and crack-free gadolinium doped ceria (GDC) thin films with controllable deposition by a magnetic-field-assisted electrostatic spray deposition technique. The influences of external permanent magnets on the deposition of GDC films were investigated. The coating area deposited using two magnets with the same pole arrangement decreased in comparison with the case of no magnets, whereas the largest deposition area was obtained in the system of the opposite poles. Analysis of as-deposited films at 450 °C indicated the formation of uniform, smooth and dense thin films with a single-phase fluorite structure. The films produced in the system using same poles were thicker, smaller in crystallite size and smoother than those fabricated under other conditions. Additionally, the GDC film deposited using the same pole arrangement showed the maximum in electrical conductivity of about 2.5 × 10−2 S/cm at a low operating temperature of 500 °C. - Highlights: • Magnetic-field-assisted electrostatic spray allows a controllable coating. • Dense, crack-free thin films were obtained at low process temperature of 450 °C. • Control of deposition, thickness and uniformity is easy to achieve simultaneously. • Films from the same pole were thicker, smaller in crystal size and smoother. • The maximum conductivity of doped ceria film was 2.5 × 10−2 S/cm at 500 °C

  13. Superconducting nanowires by electron-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sengupta, Shamashis, E-mail: shamashis.sengupta@u-psud.fr [CSNSM, Univ. Paris-Sud, IN2P3, UMR 8609, F-91405 Orsay Cedex (France); LPS, Univ. Paris-Sud, CNRS, UMR 8502, F-91405 Orsay Cedex (France); Li, Chuan; Guéron, S.; Bouchiat, H. [LPS, Univ. Paris-Sud, CNRS, UMR 8502, F-91405 Orsay Cedex (France); Baumier, Cedric; Fortuna, F. [CSNSM, Univ. Paris-Sud, IN2P3, UMR 8609, F-91405 Orsay Cedex (France); Kasumov, Alik [LPS, Univ. Paris-Sud, CNRS, UMR 8502, F-91405 Orsay Cedex (France); Institute of Microelectronics Technology and High Purity Materials, RAS, ac. Ossipyan, 6, Chernogolovka, Moscow Region 142432 (Russian Federation)

    2015-01-26

    Superconducting nanowires can be fabricated by decomposition of an organometallic gas using a focused beam of Ga ions. However, physical damage and unintentional doping often result from the exposure to the ion beam, motivating the search for a means to achieve similar structures with a beam of electrons instead of ions. This has so far remained an experimental challenge. We report the fabrication of superconducting tungsten nanowires by electron-beam-induced-deposition, with critical temperature of 2.0 K and critical magnetic field of 3.7 T, and compare them with superconducting wires made with ions. This work is an important development for the template-free realization of nanoscale superconducting devices, without the requirement of an ion beam column.

  14. Superconducting nanowires by electron-beam-induced deposition

    International Nuclear Information System (INIS)

    Superconducting nanowires can be fabricated by decomposition of an organometallic gas using a focused beam of Ga ions. However, physical damage and unintentional doping often result from the exposure to the ion beam, motivating the search for a means to achieve similar structures with a beam of electrons instead of ions. This has so far remained an experimental challenge. We report the fabrication of superconducting tungsten nanowires by electron-beam-induced-deposition, with critical temperature of 2.0 K and critical magnetic field of 3.7 T, and compare them with superconducting wires made with ions. This work is an important development for the template-free realization of nanoscale superconducting devices, without the requirement of an ion beam column

  15. Nanoscale Soldering of Positioned Carbon Nanotubes using Highly Conductive Electron Beam Induced Gold Deposition

    DEFF Research Database (Denmark)

    Madsen, Dorte Nørgaard; Mølhave, Kristian; Mateiu, Ramona Valentina; Bøggild, Peter; Rasmussen, A.M.; Appel, C.C.; Brorson, M; Jacobsen, C.J.H.

    2003-01-01

    We have developed an in-situ method for controlled positioning of carbon nanotubes followed by highly conductive contacting of the nanotubes, using electron beam assisted deposition of gold. The positioning and soldering process takes place inside an Environmental Scanning Electron Microscope (E...... embedded in a carbon matrix. Nanoscale soldering of multi-walled carbon nanotubes (MWNT) onto microelectrodes was achieved by deposition of a conducting gold line across a contact point between nanotube and electrode. The solderings were found to be mechanically stronger than the carbon nanotubes. We have......-SEM) in the presence of a source of gold-organic precursor gas. Bridges deposited between suspended microelectrodes show resistivities down to 10-4 Ωcm and Transmission Electron Microscopy (TEM) of the deposits reveals a dense core of gold particles surrounded by a crust of small gold nanoparticles...

  16. Ion assisted deposition of SiO2 film from silicon

    Science.gov (United States)

    Pham, Tuan. H.; Dang, Cu. X.

    2005-09-01

    Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

  17. Ion assisted deposition of refractory oxide thin film coatings for improved optical and structural properties

    International Nuclear Information System (INIS)

    Ion assisted deposition technique (IAD) has emerged as a powerful tool to control the optical and structural properties of thin film coatings. Keeping in view the complexity of the interaction of ions with the films being deposited, sophisticated ion sources have been developed that cater to the need of modern optical coatings with stringent spectral and environmental specifications. In the present work, the results of ion assisted deposition (IAD) of two commonly used refractory oxides, namely TiO2 and ZrO2, using cold cathode ion source (CC-102R) are presented. Through successive feedback and calibration techniques, various ion beams as well as deposition parameters have been optimized to achieve the best optical and structural film properties in the prevalent deposition geometry of the coating system. It has been possible to eliminate the unwanted optical and structural inhomogeneities from these films using and optimized set of process parameters. Interference modulated spectrophotometric and phase modulated ellipsometric techniques have been very successfully utilized to analyze the optical and structural parameters of the films. Several precision multilayer coatings have been developed and are being used for laser and spectroscopic applications. (author)

  18. Solid gold nanostructures fabricated by electron beam deposition

    DEFF Research Database (Denmark)

    Mølhave, Kristian; Madsen, Dorte Nørgaard; Rasmussen, A.M.;

    2003-01-01

    Direct writing with gold by electron beam deposition is a method for rapid fabrication of electrically conducting nanostructures. An environmental scanning electron microscope (ESEM) equipped with a source of the precursor gas dimethylacetylacetonate gold(Ill) was used to fabricate nanoscale tips...

  19. Microcracking in electron beam deposited scandia-stabilised zirconia electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Lugovy, Mykola; Slyunyayev, Viktor [Institute for Problems of Materials Science, 3 Krzhizhanovskii Str, 03142 Kiev (Ukraine); Steinberger-Wilckens, Robert [Forschungszentrum Jueelich, Jueelich (Germany)

    2009-12-01

    It is the aim of the present work to address some of the aspects of microcracking in electron beam deposited scandia-stabilised zirconia electrolyte applied for solid oxide fuel cells (SOFC) where a thin electrolyte layer is deposited on a relatively thick anode substrate. A model of microcracking for the electrolyte material is proposed which takes into account the statistical distribution of grain sizes, the stress redistribution due to failure of individual structural elements as well as the local criterion of grain fracture. The combination of electron microscopy research with model calculations permits both the specific energy of new surface creation in the electrolyte and critical parameters of the microcracking process to be determined. The annealing-induced electrolyte microcracking discussed in this work corresponds to localised microcracking, where each next structural element fails mainly at an existing microcrack tip. The features of localised microcracking in electron beam deposited scandia-stabilised zirconia electrolyte are analysed. (author)

  20. Electron beam-assisted healing of nanopores in magnesium alloys

    Science.gov (United States)

    Zheng, He; Liu, Yu; Cao, Fan; Wu, Shujing; Jia, Shuangfeng; Cao, Ajing; Zhao, Dongshan; Wang, Jianbo

    2013-01-01

    Nanopore-based sensing has emerged as a promising candidate for affordable and powerful DNA sequencing technologies. Herein, we demonstrate that nanopores can be successfully fabricated in Mg alloys via focused electron beam (e-beam) technology. Employing in situ high-resolution transmission electron microscopy techniques, we obtained unambiguous evidence that layer-by-layer growth of atomic planes at the nanopore periphery occurs when the e-beam is spread out, leading to the shrinkage and eventual disappearance of nanopores. The proposed healing process was attributed to the e-beam-induced anisotropic diffusion of Mg atoms in the vicinity of nanopore edges. A plausible diffusion mechanism that describes the observed phenomena is discussed. Our results constitute the first experimental investigation of nanopores in Mg alloys. Direct evidence of the healing process has advanced our fundamental understanding of surface science, which is of great practical importance for many technological applications, including thin film deposition and surface nanopatterning. PMID:23719630

  1. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    Science.gov (United States)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  2. Kinetics of ion beam deposition of carbon at room temperature

    International Nuclear Information System (INIS)

    Growth rates of carbon films grown by ion beam deposition using methane gas were measured in situ as a function of deposition conditions. The methane pressure dependence of the growth rate was used to measure the cross-section for charge exchange. Variations in deposition rate per incident energetic particle found for each ion energy were related to ion current density. It was found that rates of growth per incident energetic specie were (i) largest for the smallest current densities, (ii) decreased monotonically with increasing current density, and (iii) were consistently larger than can be explained by deposition directly from the energetic flux alone. These observations were interpreted in terms of irradiation-induced surface interactions which promote chemisorption of methane physisorbed from the ambient atmosphere. (orig.)

  3. Influence of the Ion-to-Atom Ratio on the Structure of CeO2 Buffer Layer by Ion Beam Assisted E-Beam Evaporation

    Science.gov (United States)

    Kim, Chang Su; Jo, Sung Jin; Kim, Woo Jin; Koo, Won Hoe; Baik, Hong Koo; Lee, Se Jong

    2005-09-01

    Using ion-beam assisted e-beam evaporation with the ion beam directed at 55° to the normal of the film plane, (200) oriented CeO2 films with biaxial texture were deposited on Hastelloy C276 substrates at room temperature. The crystalline quality and in-plane orientation of films was investigated by X-ray diffraction 2θ-scan and Φ-scan, atomic force microscopy (AFM). It was shown that the in-plane and out-of-plane textures of the CeO2 films were controlled by the deposition parameters. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.

  4. Electric field assisted aerosol assisted chemical vapour deposition of nanostructured metal oxide thin films

    International Nuclear Information System (INIS)

    Nanostructured thin films of tungsten, vanadium and titanium oxides were deposited on gas sensor substrates from the electric field assisted chemical vapour deposition reaction of tungsten hexaphenoxide, vanadyl acetylacetonate and titanium tetraisopropoxide respectively. The electric fields were generated by applying a potential difference between the inter-digitated electrodes of the gas sensor substrates during the deposition. The deposited films were characterised using scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The application of an electric field, encouraged the formation of interesting and unusual nanostructured morphologies, with a change in scale length and island packing. It was also noted that crystallographic orientation of the films could be controlled as a function of electric field type and strength. The gas sensor properties of the films were also examined; it was found that a two to three fold enhancement in the gas response could be observed from sensors with enhanced morphologies compared to control sensors grown without application of an electric field. - Highlights: • Electric field assisted chemical vapour deposition method • Ability to create high surface area film architectures • Can produce enhanced sensor response • Good control over film properties

  5. Electric field assisted aerosol assisted chemical vapour deposition of nanostructured metal oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Naik, Anupriya J.T.; Bowman, Christopher; Panjwani, Naitik [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H OAJ (United Kingdom); Warwick, Michael E.A. [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H OAJ (United Kingdom); UCL Energy Institute, Central House, 14 Upper Woburn Place, London WC1H 0HY (United Kingdom); Binions, Russell, E-mail: r.binions@qmul.ac.uk [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H OAJ (United Kingdom); School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom)

    2013-10-01

    Nanostructured thin films of tungsten, vanadium and titanium oxides were deposited on gas sensor substrates from the electric field assisted chemical vapour deposition reaction of tungsten hexaphenoxide, vanadyl acetylacetonate and titanium tetraisopropoxide respectively. The electric fields were generated by applying a potential difference between the inter-digitated electrodes of the gas sensor substrates during the deposition. The deposited films were characterised using scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The application of an electric field, encouraged the formation of interesting and unusual nanostructured morphologies, with a change in scale length and island packing. It was also noted that crystallographic orientation of the films could be controlled as a function of electric field type and strength. The gas sensor properties of the films were also examined; it was found that a two to three fold enhancement in the gas response could be observed from sensors with enhanced morphologies compared to control sensors grown without application of an electric field. - Highlights: • Electric field assisted chemical vapour deposition method • Ability to create high surface area film architectures • Can produce enhanced sensor response • Good control over film properties.

  6. Mechanical behaviour of metallic thin films on polymeric substrates and the effect of ion beam assistance on crack propagation

    International Nuclear Information System (INIS)

    The mechanisms of crack propagation in metallic films on polymeric substrates have been studied through in situ atomic force microscopy observations of thin films under tensile stresses and finite element stress calculations. Two series of films - ones deposited with ion beam assistance, the others without - have been investigated. The observations and stress calculations show that ion beam assistance can change drastically the propagation of cracks in coated materials: by improving the adhesion film/substrate, it slows down the delamination process, but in the same time enhances the cracks growth in the thickness of the material

  7. Multi-electron beam system for high resolution electron beam induced deposition

    OpenAIRE

    Van Bruggen, M.J.

    2008-01-01

    The development of a multi-electron beam system is described which is dedicated for electron beam induced deposition (EBID) with sub-10 nm resolution. EBID is a promising mask-less nanolithography technique which has the potential to become a viable technique for the fabrication of 20-2 nm structures after 2013, as described by the International Technology Roadmap for Semiconductors (ITRS), or can be used for rapid prototyping in research applications. The key point is to combine the throughp...

  8. Hydrogen removal from e-beam deposited alumina thin films by oxygen ion beam

    International Nuclear Information System (INIS)

    Hydrogen interstitials and oxygen vacancies defects create energy levels in the band gap of alumina. This limits the application of alumina as a high-k dielectric. A low thermal budget method for removal of hydrogen from alumina is discussed. It is shown that bombardment of alumina films with low energy oxygen ion beam during electron beam evaporation deposition decreases the hydrogen concentration in the film significantly

  9. Plasma assisted chemical vapour deposition for optical coatings

    International Nuclear Information System (INIS)

    Full text: Plasma assisted chemical vapour deposition (PECVD) is commonly used in semiconductor fabrication plants for depositing layers of dielectric materials. Reactive gasses are admitted to a chamber at low pressure and applying an electric field, usually a RF field, generates a plasma. The gasses react to form a solid material on the walls of the chamber and substrates. In this project we are exploring the possibility of applying this method to the growth of multilayer optical thin films. A small prototype system was constructed and optical multi layers of up to 24 layers were deposited over a diameter of 90 mm. The system uses 13.56 MHz RF to generate the plasma in a simple capacitive plate chamber. The gasses used were silane, oxygen and nitrogen. This allows SiO2 (RI 1.45) and Si3N4 (RI 1.93) to be deposited. Multilayer coatings were designed using these materials on TFCalc. The required thickness for the various layers were tabulated and fed into a computer controlling the gas flow during deposition. In this way the structures were deposited semi-automatically. The growing films were monitored using a spectrometer looking at light reflected from the growing film over a range from 400 - 800 nm simultaneously. This data was then used to reconstruct the deposition and analyze deviations from the design. An SEM micrograph of the cross-section of the multilayers was used to obtain relative thicknesses of the individual layers. Other structures deposited include rugate notch filters, coloured filters and broad band anti-reflection layers. Running the prototype has proved the concept and the project has moved to a scale up stage in which a larger version is being constructed at Avtronics Pty Ltd. This aims to coat uniformly over a diameter of 600 mm. Initially, the same materials will be used to produce coatings but fixture work will increase the refractive index range of materials which can be deposited and fully automate the coating process. (authors)

  10. Electron-beam deposition of vanadium dioxide thin films

    International Nuclear Information System (INIS)

    Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass. (orig.)

  11. Electron-beam deposition of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Marvel, R.E.; Appavoo, K. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Choi, B.K. [Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville, TN (United States); Nag, J. [Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States); Haglund, R.F. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Vanderbilt University, Institute for Nanoscale Science and Engineering, Nashville, TN (United States); Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States)

    2013-06-15

    Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass. (orig.)

  12. Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

    Directory of Open Access Journals (Sweden)

    C. G. Jin

    2008-01-01

    Full Text Available Silicon carbide (SiC films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM, scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

  13. An optimized nanoparticle separator enabled by electron beam induced deposition

    International Nuclear Information System (INIS)

    Size-based separations technologies will inevitably benefit from advances in nanotechnology. Direct-write nanofabrication provides a useful mechanism for depositing/etching nanoscale elements in environments otherwise inaccessible to conventional nanofabrication techniques. Here, electron beam induced deposition was used to deposit an array of nanoscale features in a 3D environment with minimal material proximity effects outside the beam-interaction region. Specifically, the membrane component of a nanoparticle separator was fabricated by depositing a linear array of sharply tipped nanopillars, with a singular pitch, designed for sub-50 nm nanoparticle permeability. The nanopillar membrane was used in a dual capacity to control the flow of nanoparticles in the transaxial direction of the array while facilitating the sealing of the cellular-sized compartment in the paraxial direction. An optimized growth recipe resulted which (1) maximized the growth efficiency of the membrane (which minimizes proximity effects) and (2) preserved the fidelity of the spacing between nanopillars (which maximizes the size-based gating quality of the membrane) while (3) maintaining sharp nanopillar apexes for impaling an optically transparent polymeric lid critical for device sealing.

  14. Magnetron deposition of TCO films using ion beam

    Science.gov (United States)

    Asainov, O.; Umnov, S.; Chinin, A.

    2015-11-01

    Thin films of tin oxide (TO) were deposited on the glass substrates at room temperature using reactive magnetron sputtering at various oxygen partial pressures. After the deposition the films were irradiated with argon ions beam. The change of the optical and electrical properties of the films depending on the irradiation time was studied. Films optical properties in the range of 300-1100 nm were investigated by photometry as well as their structural properties were studied using X-ray diffraction. Diffractometric research showed that the films, deposited on a substrate, have a crystal structure, and after argon ions irradiation they become quasi-crystalline (amorphous). It was found that the transmission increases proportionally with the irradiation time, but the surface resistance -disproportionally.

  15. MoSx films deposited on different matrices by ion beam technique

    International Nuclear Information System (INIS)

    MoSx(x = 1.79∼2.34) films of 200 nm thickness are deposited onto brass and C20 steel substrates by the ion beam assisted technique, respectively. Structures and compositions of these films, and changes in valence states of the Mo element are examined by XRD and XPS before and after wear. The lubrication properties and wear resistances for two kinds of samples are evaluated using a pin-on-disk installation in atmosphere at the room temperature. Tribo-wear behaviours and the microstructures between two kinds of samples exhibit obvious differences

  16. Enhanced adhesion of Cu-W thin films by ion beam assisting bombardment implanting

    Institute of Scientific and Technical Information of China (English)

    ZHOU Ling-ping; WANG Ming-pu; WANG Rui; LI Zhou; ZHU Jia-jun; PENG Kun; LI De-yi; LI Shao-lu

    2008-01-01

    Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology. Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied. It is found that the technique of ion beam assisting bombardment implanting of W particles can remarkably improve the adhesive property of Cu-W thin films. Indentation and scratching test show that, the critical load is doubled over than the sample only sputter-cleaned by ion beam. The enhancing mechanism of ion beam assisting bombardment implanting of Cu-W thin films was analyzed. With the help of mid-energy Ar+ ion beam, W atoms can diffuse into the Fe-substrate surface layer; Fe atoms in the substrate surface layer and W atoms interlace with one another; and microcosmic mechanical meshing and diffusing combination on atom-scale among the Fe and W atoms through the film/substrate interface can be formed. The wettability and thermal expansion properties of the W atoms diffusion zone containing plentiful W atoms are close to those of pure W or W-based Cu-W film.

  17. A critical literature review of focused electron beam induced deposition

    Science.gov (United States)

    van Dorp, W. F.; Hagen, C. W.

    2008-10-01

    An extensive review is given of the results from literature on electron beam induced deposition. Electron beam induced deposition is a complex process, where many and often mutually dependent factors are involved. The process has been studied by many over many years in many different experimental setups, so it is not surprising that there is a great variety of experimental results. To come to a better understanding of the process, it is important to see to which extent the experimental results are consistent with each other and with the existing model. All results from literature were categorized by sorting the data according to the specific parameter that was varied (current density, acceleration voltage, scan patterns, etc.). Each of these parameters can have an effect on the final deposit properties, such as the physical dimensions, the composition, the morphology, or the conductivity. For each parameter-property combination, the available data are discussed and (as far as possible) interpreted. By combining models for electron scattering in a solid, two different growth regimes, and electron beam induced heating, the majority of the experimental results were explained qualitatively. This indicates that the physical processes are well understood, although quantitatively speaking the models can still be improved. The review makes clear that several major issues remain. One issue encountered when interpreting results from literature is the lack of data. Often, important parameters (such as the local precursor pressure) are not reported, which can complicate interpretation of the results. Another issue is the fact that the cross section for electron induced dissociation is unknown. In a number of cases, a correlation between the vertical growth rate and the secondary electron yield was found, which suggests that the secondary electrons dominate the dissociation rather than the primary electrons. Conclusive evidence for this hypothesis has not been found. Finally

  18. Plasma-assisted deposition of lithium phosphorus oxynitride films: Substrate bias effects

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yoon Gu; Wadley, H.N.G. [Department of Material Science and Engineering, University of Virginia, 395 McCormick Road, Charlottesville, VA 22904 (United States)

    2009-02-15

    Lithium phosphorus oxynitride (Lipon) films have been synthesized by a plasma-assisted directed vapor deposition (PA-DVD) approach. In this approach, a hollow cathode technique was used to create an argon plasma through which was propagated an electron-beam generated Li{sub 3}PO{sub 4} vapor entrained in a N{sub 2}-doped helium gas jet. Without plasma assistance, amorphous, mud cracked and highly porous Li{sub 3}PO{sub 4} films were formed. When plasma-assistance was used, nitrogen was incorporated creating a Lipon film whose composition, morphology, structure, and deposition rate could be manipulated by modifying the substrate bias. Films with spiral or very smooth surfaces could be made in this way. Fully amorphous films or films with locally crystallized regions in an amorphous matrix could be synthesized by varying the bias voltage. The presence of these local regions of crystallinity within a Lipon film decreased the Li-ion conductivities from the 10{sup -7} S cm{sup -1} to 10{sup -10} S cm{sup -1} range. (author)

  19. Ion-assisted deposition of moisture-stable hafnium oxide films for ultraviolet applications

    International Nuclear Information System (INIS)

    A design-of-experiments statistical approach was taken to determine the optimum ion gun operating parameters for the deposition of moisture-stable, low-absorbing hafnium oxide films by ion-assisted electron-beam evaporation. Factors identified as affecting the quality of hafnia films were chamber pressure, deposition rate, ion gun source gas composition, and ion gun current. Both oxygen and argon were used as source gases. High and low levels of the factors were chosen on the basis of our experience with the operating range of the system, and we made a series of 24 runs with all possible combinations of these factors. From a statistical analysis of the data, we find that the best films are obtained with a 1:1 mixture of argon and oxygen, 3-3.5 x 10-4 Torr chamber pressure, 0.3-nm/s deposition rate, and 0.5-A ion gun current. X-ray diffraction measurements show that the ion-assisted films exhibit a partial monoclinic crystalline structure, whereas the unassisted films are amorphous

  20. Ion beam sputter deposition of optical interference coatings

    International Nuclear Information System (INIS)

    Full text: Optical coatings produced by ion beam sputter deposition (IBSD) of oxide layers exhibit low scatter, low absorption, and environmental durability comparable to bulk materials. IBSD utilizes a broad beam ion source to sputter target materials in the presence of oxygen, producing oxide films. The process allows for the independent control of ion beam current, energy, and background gas pressure. The resulting films exhibit low defect densities, high purity, correct stoichiometry, amorphous structure, and high packing density. These properties allow the production of optical coatings with attributes highly desirable in a variety of scientific and industrial applications. Optical cavities utilizing low loss mirrors are used in gravitational wave research, quantum optics, spectroscopy, and numerous other areas of research. Industrial applications of IBSD coatings include the production of mirrors for lasers, including ring laser gyroscopes, corrosion resistant components for semiconductor process tools, and components for optical telecommunications. The IBSD process is easy to automate in contrast to other common processes of deposition which almost always require the presence of skilled operators. The ease of automation is a key factor in the economic viability of IBSD and its recent proliferation. The properties of IBSD coatings and the manufacturability and reproducibility made possible by full automation allow this process to play key enabling roles in research and industry. A review of the IBSD process, its history, and applications will be presented

  1. Substrate heating measurements in pulsed ion beam film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Olson, J.C.; Davis, H.A.; Rej, D.J.; Waganaar, W.J. [Los Alamos National Lab., NM (United States); Tallant, D.R. [Cornell Univ., Ithaca, NY (United States). Materials Science and Engineering Dept.; Thompson, M.O. [Sandia National Labs., Albuquerque, NM (United States)

    1995-05-01

    Diamond-like Carbon (DLC) films have been deposited at Los Alamos National Laboratory by pulsed ion beam ablation of graphite targets. The targets were illuminated by an intense beam of hydrogen, carbon, and oxygen ions at a fluence of 15-45 J/cm{sup 2}. Ion energies were on the order of 350 keV, with beam current rising to 35 kA over a 400 ns ion current pulse. Raman spectra of the deposited films indicate an increasing ratio of sp{sup 3} to sp{sup 2} bonding as the substrate is moved further away from the target and further off the target normal. Using a thin film platinum resistor at varying positions, we have measured the heating of the substrate surface due to the kinetic energy and heat of condensation of the ablated material. This information is used to determine if substrate heating is responsible for the lack of DLC in positions close to the target and near the target normal. Latest data and analysis will be presented.

  2. Lithium phosphorous oxynitride films synthesized by a plasma-assisted directed vapor deposition approach

    International Nuclear Information System (INIS)

    A plasma-assisted directed vapor deposition approach has been explored for the synthesis of lithium phosphorous oxynitride (Lipon) thin films. A Li3PO4 source was first evaporated using a high voltage electron beam and the resulting vapor entrained in a nitrogen-doped supersonic helium gas jet and deposited on a substrate at ambient temperature. This approach failed to incorporate significant concentrations of nitrogen in the films. A hollow cathode technique was then used to create an argon plasma that enabled partial ionization of both the Li3PO4 vapor and nitrogen gas just above the substrate surface. The plasma-enhanced deposition process greatly increased the gas phase and surface reactivity of the system and facilitated the synthesis and high rate deposition of amorphous Lipon films with the N/P ratios between 0.39 and 1.49. Manipulation of the plasma-enhanced process conditions also enabled control of the pore morphology and significantly affected the ionic transport properties of these films. This enabled the synthesis of electrolyte films with lithium ion conductivities in the 10-7-10-8 S/m range. They appear to be well suited for thin-film battery applications

  3. Ion beam induced conductivity in chemically vapor deposited diamond films

    International Nuclear Information System (INIS)

    Polycrystalline diamond films deposited by the microwave plasma chemical vapor deposition (CVD) technique onto quartz substrates have been irradiated with 100 keV C and 320 keV Xe ions at room temperature and at 200 degree C. The dose dependence of the electrical conductivity measured in situ exhibited complicated, nonmonotonic behavior. High doses were found to induce an increase of up to ten orders of magnitude in the electrical conductivity of the film. The dose dependence of the conductivity for the CVD films was found to be very similar to that measured for natural, type IIa, single-crystal diamonds irradiated under identical conditions. This result suggests that the conduction mechanism in ion beam irradiated polycrystalline CVD diamond films is not dominated by grain boundaries and graphitic impurities as one might have expected, but rather is determined by the intrinsic properties of diamond itself

  4. Chemical vapour deposited diamonds for dosimetry of radiotherapeutical beams

    Energy Technology Data Exchange (ETDEWEB)

    Bucciolini, M.; Mazzocchi, S. [Firenze Univ., Firenze (Italy). Dipartimento di Fisiopatologia Clinica; INFN, Firenze (Italy); Borchi, E.; Bruzzi, M.; Pini, S.; Sciortino, S. [Firenze Univ., Firenze (Italy). Dipartimento di Energetica; INFN, Firenze (Italy); Cirrone, G.A.P.; Guttone, G.; Raffaele, L.; Sabini, M.G. [INFN, Catania (Italy). Laboratori Nazionali del Sud

    2002-07-01

    This paper deals with the application of synthetic diamond detectors to the clinical dosimetry of photon and electron beams. It has been developed in the frame of INFN CANDIDO project and MURST Cofin. Diamonds grown with CVD (Chemical Vapour Deposition) technique have been studied; some of them are commercial samples while others have been locally synthesised. Experiments have been formed using both on-line and off-line approaches. For the off-line measurements, TL (thermoluminescent) and TSC (thermally stimulated current) techniques have been used.

  5. Chemical vapour deposited diamonds for dosimetry of radiotherapeutical beams

    International Nuclear Information System (INIS)

    This paper deals with the application of synthetic diamond detectors to the clinical dosimetry of photon and electron beams. It has been developed in the frame of INFN CANDIDO project and MURST Cofin. Diamonds grown with CVD (Chemical Vapour Deposition) technique have been studied; some of them are commercial samples while others have been locally synthesised. Experiments have been formed using both on-line and off-line approaches. For the off-line measurements, TL (thermoluminescent) and TSC (thermally stimulated current) techniques have been used

  6. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  7. Plasma and Ion Assistance in Physical Vapor Deposition: AHistorical Perspective

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2007-02-28

    Deposition of films using plasma or plasma-assist can betraced back surprisingly far, namely to the 18th century for arcs and tothe 19th century for sputtering. However, only since the 1960s thecoatings community considered other processes than evaporation for largescale commercial use. Ion Plating was perhaps the first importantprocess, introducing vapor ionization and substrate bias to generate abeam of ions arriving on the surface of the growing film. Ratherindependently, cathodic arc deposition was established as an energeticcondensation process, first in the former Soviet Union in the 1970s, andin the 1980s in the Western Hemisphere. About a dozen various ion-basedcoating technologies evolved in the last decades, all characterized byspecific plasma or ion generation processes. Gridded and gridless ionsources were taken from space propulsion and applied to thin filmdeposition. Modeling and simulation have helped to make plasma and ionseffects to be reasonably well understood. Yet--due to the complex, oftennon-linear and non-equilibrium nature of plasma and surfaceinteractions--there is still a place for the experience plasma"sourcerer."

  8. Radiation effects of electron-beam metal depositions on IGFET's

    International Nuclear Information System (INIS)

    Electron-beam radiation effects on n-channel IGFET parameters were studied. This paper summarizes the resulting surface- and dielectric-radiation effects obtained with a series of experiments incorporating e-gun metal deposition on MOS, MNOS, and SNOS structures. The results are compared with those using resistance-heated metal deposition for various thin-film compositions between the metal and silicon surfaces. A comparison is also made with the effects of controlled direct e-beam irradiation of the structures. The efficiency of quartz and aluminum thin films over MNOS structures, in reducing e-gun radiation effects, is evaluated for double-level metallurgy structures. The effect of different thermal-annealing conditions for offsetting the radiation effects is determined. It is concluded that e-gun metallization causes large negative voltage shifts in MOS, MNOS, and SNOS devices. While MOS threshold shifts are fully ''annealable'', residual MNOS and SNOS V/sub T/ shifts are observed after an anneal of 3500/4500C. Thin films of quartz and aluminum over MOS and MNOS structures effectively reduce radiation effects. Other IGFET parameters are not substantially affected by e-gun radiation

  9. Beam non-uniformity smoothing using density valley formed by heavy ion beam deposition in inertial confinement fusion fuel pellet

    International Nuclear Information System (INIS)

    We study the beam nonuniformity smoothing effect of radiation transport in the density valley formed by an ion-beam deposition in a heavy ion-beam inertial confinement fusion pellet by numerical simulations. The simulation results show that the radiation energy is confined in the density valley, and the beam nonuniformity can be smoothed out by the radiation transport along the density valley. In addition, an estimation for the Rayleigh-Taylor instability during the implosion phase is also presented. (author)

  10. Energy deposition studies for the LBNE beam absorber

    Energy Technology Data Exchange (ETDEWEB)

    Rakhno, Igor L.; Mokhov, Nikolai V.; Tropin, Igor S.

    2015-01-29

    Results of detailed Monte Carlo energy deposition studies performed for the LBNE absorber core and the surrounding shielding with the MARS15 code are described. The model of the entire facility, that includes a pion-production target, focusing horns, target chase, decay channel, hadron absorber system – all with corresponding radiation shielding – was developed using the recently implemented ROOT-based geometry option in the MARS15 code. This option provides substantial flexibility and automation when developing complex geometry models. Both normal operation and accidental conditions were studied. Various design options were considered, in particular the following: (i) filling the decay pipe with air or helium; (ii) the absorber mask material and shape; (iii) the beam spoiler material and size. Results of detailed thermal calculations with the ANSYS code helped to select the most viable absorber design options.

  11. Energy deposition studies for the LBNE beam absorber

    CERN Document Server

    Rakhno, Igor L; Tropin, Igor S

    2015-01-01

    Results of detailed Monte Carlo energy deposition studies performed for the LBNE absorber core and the surrounding shielding with the MARS15 code are described. The model of the entire facility, that includes a pion-production target, focusing horns, target chase, decay channel, hadron absorber system -- all with corresponding radiation shielding -- was developed using the recently implemented ROOT-based geometry option in the MARS15 code. This option provides substantial flexibility and automation when developing complex geometry models. Both normal operation and accidental conditions were studied. Various design options were considered, in particular the following: (i) filling the decay pipe with air or helium; (ii) the absorber mask material and shape; (iii) the beam spoiler material and size. Results of detailed thermal calculations with the ANSYS code helped to select the most viable absorber design options.

  12. Dual ion beam deposition of carbon films with diamondlike properties

    Science.gov (United States)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1984-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  13. Hemocompatibility of DLC coatings synthesized by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    LI; Dejun

    2001-01-01

    [1]Gallagher, J. J., Simpson, J. A., Search for trapped electrons and a magnetic moment at Mars by Mariner IV, Science, 1965, 149: 1233—1239.[2]Russell, C. T., The magnetic field of Mars: Mars 3 evidence reexamined, Geophys. Res. Lett., 1978, 5: 81—86.[3]Riedler, W., Schwingenschun, K., Lichtenegger, H. et al., Interaction of solar wind with the planet Mars: Phobos 2 magnetic field observations, Planet. Space Sci., 1991, 39: 75—81.[4]Gringauz, K. I., What was known about the Martian magnetosphere before Phobos-2 mission, Planet. Space Sci., 1991, 39: 73—74.[5]Acuna, M. H., Connerney, J. E. P., Wasilewski, P. et al., Magnetic field and plasma observations at Mars: Initial results of the Mars global surveyor mission, Science, 1998, 279: 1676—1680.[6]Mohlmann, D., Riedler. W., Rustenbuch, J. et al., The question of an internal Martian magnetic field, Planet. Space Sci., 1991, 39: 83—88.[7]Shi, J. K., Liu, Z. X., Zhang, T. L., A theoretical study on the O+ ions of the Martian magnetosphere, Chin Astron Astrophys., 1999, 23: 377—383.[8]Rosenbauer, H., Shutte, N., Apathy, I. et al., Ions of Martian origin and plasma sheet in the Martian magnetotail: Initial results of TAUS experiment, Nature, 1989, 341: 612—614.[9]Lundin, R., Zakharov, A., Pelinen, R. et al., ASPERA/Phobos measurements of the ion outflow from the Martian ionosphere, Geophy. Res. Lett., 1990, 17: 873—876.[10]Verigin, M. I., Shutte, N. M., Galeev, A. A. et al., Ions of planetary origin in the Martian magnetosphere (Phobos 2 / TAUS experiment), Planet. Space Sci., 1991, 39: 131—137.[11]Lundin, R., Zakharov, A., Pelinen, R. et al., First measurements of the ionospheric plasma escape from Mars, Nature, 1989, 341: 609—612.[12]Lammer, H., Bauer, S. J., Nonthermal atmospheric escape from Mars and Titan, J. Geophys. Res., 1991, 96: 1819—1826.[13]Haider, S. A., O+ escape in the polar ion exosphere of Mars, Adv. Space Res., 1995, 16: 49—55.[14]Shi. J. K., Liu, Z. X., Zhang, T. L. et al., The influence of the intrinsic magnetic field on the distribution of O+ in Martian magnetosphere, Chinese Science Bulletin (in Chinese), 1997, 42(23): 1898—1901.[15]Luhmann, J. G., Brace, L. H., Near-Mars space, Rev. Geophys., 1991, 29: 121—140.[16]Luhmann, J. G., Schwingenschuh, K., A model of the magnetic ion environment of Mars, J. Geophys. Res., 1990, 95: 939—945.[17]Slavin, J. A., Schwingenschuh, K., Reidler, W. et al., The solar wind interaction with Mars: Mariner-4, Mars-2,3,5, and Phobos-2 observation of bow shock position and shape, J. Geophys. Res., 1991, 96: 11235—11241.[18]Eviater, A., Lencheek, A. M., Singer, S. F., Distribution of density in an ion-exosphere of a nonrotating planet, Phys. Fluids, 1964, 7: 1775—1779.

  14. Cobalt cluster-assembled thin films deposited by low energy cluster beam deposition: Structural and magnetic investigations of deposited layers

    International Nuclear Information System (INIS)

    Cobalt cluster-assembled thin films were deposited on amorphous-carbon-coated copper grids and on silicon substrates at room temperature by low energy cluster beam deposition. Characterizations using high-resolution transmission electronic microscopy and atomic force microscopy reveal randomly stacked agglomerates of 9-11 nm diameter, which are themselves composed of small 3.6 nm diameter fcc cobalt clusters. The films are ferromagnetic up to room temperature and above, which implies that the clusters are exchange coupled. The approach to saturation is analyzed within the random anisotropy model. The values of the exchange coefficient A and the anisotropy constant K then derived are discussed. The temperature dependence of the coercivity below 100 K is discussed in terms of thermal activation effects. All results indicate that the fundamental entity governing the magnetic behaviors is constituted by the 9-11 nm diameter agglomerates rather than by the clusters themselves

  15. Nanostructured component fabrication by electron beam-physical vapor deposition

    Science.gov (United States)

    Singh, Jogender; Wolfe, Douglas E.

    2005-08-01

    Fabrication of cost-effective, nano-grained net-shaped components has brought considerable interest to Department of Defense, National Aeronautics and Space Administration, and Department of Energy. The objective of this paper is to demonstrate the versatility of electron beam-physical vapor deposition (EB-PVD) technology in engineering new nanostructured materials with controlled microstructure and microchemistry in the form of coatings and net-shaped components for many applications including the space, turbine, optical, biomedical, and auto industries. Coatings are often applied on components to extent their performance and life under severe environmental conditions including thermal, corrosion, wear, and oxidation. Performance and properties of the coatings depend upon their composition, microstructure, and deposition condition. Simultaneous co-evaporation of multiple ingots of different compositions in the high energy EB-PVD chamber has brought considerable interest in the architecture of functional graded coatings, nano-laminated coatings, and design of new structural materials that could not be produced economically by conventional methods. In addition, high evaporation and condensate rates allowed fabricating precision net-shaped components with nanograined microstructure for various applications. Using EB-PVD, nano-grained rhenium (Re) coatings and net-shaped components with tailored microstructure and properties were fabricated in the form of tubes, plates, and Re-coated spherical graphite cores. This paper will also present the results of various metallic and ceramic coatings including chromium, titanium carbide (TiC), titanium diboride (TiB2), hafnium nitride (HfN), titanium-boron-carbonitride (TiBCN), and partially yttria stabilized zirconia (YSZ) TBC coatings deposited by EB-PVD for various applications.

  16. Physical properties of ITO thin films prepared by ion-assisted electron beam evaporation

    Science.gov (United States)

    Qiu, Yang; Jin, Yangli; Zhao, Hua; Xu, Bo; Wang, Jiajia

    2014-12-01

    Tin doped indium oxide (ITO) thin films were prepared on IR glass substrates at different oxygen flow rate by ion-assisted electron beam evaporation method. Properties such as microstructure, morphology, sheet resistance and optical transmittance were investigated by X-ray diffractometer, SEM, four-point probe and UV-VIS-IR spectrophotometer, respectively. Lattice constant, inner stress level and energy band gap (Eg) of ITO thin films as-deposited were calculated and discussed. The mechanical properties of ITO thin films were studied by scratching method. The measurements were performed by scratch tester and the results were recorded as acoustic emission spectra and scratch track images taken by SEM. Relationship between inner stress level and mechanical performance was investigated in detail.

  17. Thin-Film Deposition of Metal Oxides by Aerosol-Assisted Chemical Vapour Deposition: Evaluation of Film Crystallinity

    Science.gov (United States)

    Takeuchi, Masahiro; Maki, Kunisuke

    2007-12-01

    Sn-doped In2O3 (ITO) thin films are deposited on glass substrates using 0.2 M aqueous and methanol solutions of InCl3(4H2O) with 5 mol % SnCl2(2H2O) by aerosol-assisted chemical vapour deposition under positive and negative temperature gradient conditions. The film crystallinity is evaluated by determining the film thickness dependence of X-ray diffraction peak height. When using aqueous solution, the ITO films grow with the same crystallinity during the deposition, but when using methanol solution, the preferred orientation of ITO changes during the deposition.

  18. Optical Properties and Microstructure of Ta2O5 Thin Films Prepared by Ion Assisted Electron Beam Evaporation

    Institute of Scientific and Technical Information of China (English)

    ZHANG Guangyong; XUE Yiyu; GUO Peitao; WANG Hanhua; MA Zhongjie

    2008-01-01

    An effective method for determining the refractive index of weak absorption transparent thin films was presented, which is also applicable to other weak absorption dielectric thin films.The as-deposited Ta2O5 thin films prepared by ion assisted electron beam evaporation showed a maxima transmittance as high as 93% which was close to that of the bare substrate, and exhibited a blue shift when the substrate temperature increased from room temperature to 250 ℃. The refractive index seemed to be immune to the substrate temperature and film thickness with its value about 2.14 at incidence wavelength of 550 nm. The surface morphology measured by atomic force microscopy (AFM) revealed that the microstructures lead to the slim optical difference, which was the interplay of substrate temperature and assisted ion beam.

  19. Structural and electrical properties of electric field assisted spray deposited pea structured ZnO film

    Science.gov (United States)

    Chaturvedi, Neha; Swami, Sanjay Kumar; Dutta, Viresh

    2016-05-01

    Spray deposition of ZnO film was carried out. The uneven growth of ZnO nanostructures is resulted for spray deposited ZnO film. Application of DC voltage (1000V) during spray deposition provides formation of pea like structures with uniform coverage over the substrate. Electric field assisted spray deposition provides increased crystallinity with reduced resistivity and improved mobility of the ZnO film as compared to spray deposited ZnO film without electric field. This with large area deposition makes the process more efficient than other techniques.

  20. Focused electron beam induced deposition as a tool to create electron vortices.

    Science.gov (United States)

    Béché, A; Winkler, R; Plank, H; Hofer, F; Verbeeck, J

    2016-01-01

    Focused electron beam induced deposition (FEBID) is a microscopic technique that allows geometrically controlled material deposition with very high spatial resolution. This technique was used to create a spiral aperture capable of generating electron vortex beams in a transmission electron microscope (TEM). The vortex was then fully characterized using different TEM techniques, estimating the average orbital angular momentum to be ∼0.8ℏ per electron with almost 60% of the beam ending up in the ℓ=1 state. PMID:26432987

  1. Growth of epitaxial ZnO films on sapphire substrates by plasma assisted molecular beam epitaxy

    Science.gov (United States)

    Hyndman, Adam R.; Allen, Martin W.; Reeves, Roger J.

    2014-03-01

    Epitaxial layers of ZnO have been grown on c-plane, (0001) sapphire substrates by plasma assisted molecular beam epitaxy. The oxygen:zinc flux ratio was found to be crucial in obtaining a film with a smooth surface and good crystallinity. When increasing film thickness from ~80 to 220 nm we observed an increase in the streakiness of RHEED images, and XRD revealed a reduction in crystal strain and increase in crystal alignment. A film with surface roughness of 0.5 nm and a XRD rocking curve FWHM of 0.1 for the main ZnO peak (0002) was achieved by depositing a low temperature ZnO buffer layer at 450 °C and then growing for 120 minutes at 700 °C with a Zn-cell temperature of 320 °C and an oxygen partial pressure of 7e-7 Torr. We found novel structures on two samples grown outside of our ideal oxygen:zinc flux ratio. SEM images of a sample believed to have been grown in a Zn-rich environment showed flower like structures up to 150 um in diameter which appear to have formed during growth. Another sample believed to have been deposited in a Zn-deficient environment had rings approximately 1.5 um in diameter scattered on its surface.

  2. Beam-Induced Deposition of Thin Metallic Films.

    Science.gov (United States)

    Funsten, Herbert Oliver, III

    1990-01-01

    Ion and electron beam induced deposition (BID) of thin (1 μm), conductive films is accomplished by dissociating and removing the nonmetallic components of an adsorbed, metal-based, molecular gas. Current research has focused primarily on room temperature (monolayer adsorption) BID using electrons and slow, heavy ions. This study investigates low temperature (50 to 200 K) BID in which the condensation of the precursor gases (SnCl _4 and (CH_3) _4Sn) maximizes the efficiency of the incident radiation which can create and remove nonmetallic fragments located several monolayers below the film surface. The desired properties of the residual metallic films are produced by using as incident radiation either nuclear (35 keV Ar ^+) or electronic (2 keV electrons, 25 keV H^+, or 50 keV H ^+) energy loss mechanisms. Residual films are analyzed ex situ by Scanning Electron Microscopy (SEM), thickness measurements, resistivity measurements, Rutherford Backscattering Spectroscopy (RBS), and infrared spectroscopy. Low temperature BID film growth models, which are derived from both a computer simulation and a mathematical analysis, closely agree. Both the fragmentation and sputtering cross sections for a particular ion and energy are derived for films created from (CH_3) _4Sn. The fragmentation cross section, which corresponds to film growth, is roughly related to the electronic stopping power by the 1.9 power. The loss of carbon in films which were created from (CH_3) _4Sn is strongly dependent on the nuclear stopping power. Film growth rates for low temperature BID have been found to be 10 times those of room temperature BID.

  3. Effects of oxygen pressure in reactive ion beam sputter deposition of zirconium oxides

    International Nuclear Information System (INIS)

    The mechanism of reactive ion beam sputtering is investigated. The experimental results indicate that the pressure decrease during sputtering, the properties of Zr--O films, and the deposition rate are all strongly influenced by oxygen partial pressure. A new model which takes into account the gettering action of the deposition material and deals with the number of sputtered and gaseous particles is presented for reactive ion beam sputtering of metal. The theoretical values are compared with experimental results of the reactive ion beam sputtering. It is found that the calculated values agree extremely well with the oxygen partial pressure decrease and the deposition rate measured experimentally

  4. CrN films deposited by ion source-assisted magnetron sputtering

    International Nuclear Information System (INIS)

    CrN coatings were deposited on Si (100) and piston rings by ion source assisted 40 kHz magnetron sputtering. Structure and composition of the coatings were characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy and transmission electron microscopy. Mechanical and tribological properties were assessed by microhardness and pin-on-disc testing. The ion source-assisted system has a deposition rate of 3.88 μm/h, against 2.2 μm/h without ion-source assistance. The CrN coatings prepared with ion source assistance exhibited an increase in microhardness (up to 16.3 GPa) and decrease in friction coefficient (down to 0.48) at the optimized cathode source-to-substrate distance. Under optimized conditions, CrN coatings were deposited on piston rings, with a thickness of 25 μm and hardness of 17.85 GPa. (authors)

  5. Diffusion and Interface Reaction of Cu/Si(100) Films Prepared by Cluster Beam Deposition

    Institute of Scientific and Technical Information of China (English)

    GAO Xing-Xin; JIA Yan-Hui; LI Gong-Ping; CHO Seong-Jin; KIM Hee

    2011-01-01

    Cu thin films are deposited on Si(100) substrates by neutral cluster beams and ionized cluster beams. The atomic diffusion and interface reaction between the Cu films and the Si substrates of as-deposited and annealed at different temperatures(230℃, 450℃, 500℃and 600℃) are investigated by Rutherford backscatteringspectrometry(RBS)and x-ray diffraction(XRD). Some significant results are obtained on the following aspects:(1) For the Cu/Si(100)samples prepared by neutral cluster beams and ionized cluster beams at Va=0 kV, atomic diffusion phenomena are observed clearly in the as-deposited samples. With the increase of annealing temperature, the interdiffusion becomes more apparent. However, the diffusion intensities of the RBS spectra of the Cu/Si(100) films using neutral cluster beams are always higher than that of the Cu/Si(100) films using ionized cluster beams at Va=OkV in the as-deposited and samples annealed at the same temperature. The compound of Cu3Si is observed in the as-deposited samples.(2) For the Cu/Si(100) samples prepared by ionized cluster beams at Va=1, 3, 5 kV,atomic diffusion phenomena are observed in the as-deposited samples at Va=1, 5 kV. For the samples prepared at Va=3 kV, the interdiffusion phenomenon is observed until 500℃ annealing temperature. The reason for the difference is discussed.

  6. Laser-assisted deposition of thin C60 films

    DEFF Research Database (Denmark)

    Schou, Jørgen; Canulescu, Stela; Fæster, Søren

    Metal and metal oxide films with controlled thickness from a fraction of a monolayer up more than 1000 nm and known stoichiometry can be produced by pulsed laser deposition (PLD) relatively easily, and (PLD) is now a standard technique in all major research laboratories within materials science...

  7. Microwave assisted apatite coating deposition on Ti6Al4V implants

    International Nuclear Information System (INIS)

    In this work we report a novel microwave assisted technology to deposit a uniform, ultra-thin apatite coating without any cracks on titanium implants in minutes. This method comprises of conventional biomimetic coating in synergism with microwave irradiation to result in alkaline earth phosphate nucleation. The microwave assisted coating process mainly follows the initial stages of biomimetic coating until the step of the Ca-P nuclei formation. After that, due to microwave irradiation more Ca-P nuclei are formed to cover the whole surface of the implant instead of the growth of deposited Ca-P nuclei to Ca-P globules and coatings. It is interesting to note the doping of Mg2+ to Ca-P apatite coating can significantly change the properties and performances of as-deposited coatings. The hydrophilicity, physical properties, bioactivity, cell adhesion, and growth capability of as-deposited microwave assisted coatings were investigated. The study shows that this coating technology has great potential in biomedical applications. Additionally, since biomimetic coating can be applied to series of implant materials such as polymer, metals and glass, it is expected this microwave assisted coating technology can also be applied to these materials if they can remains stable at 100 °C, the boiling point of water. - Highlights: • A microwave assisted apatite coating process. • Apatite composition can be controlled by adjusting solution composition. • The deposited apatite coating is uniform, non-crack, and ultra-thin. • The coating process takes only a few minutes

  8. Physico-chemical study of the focused electron beam induced deposition process

    OpenAIRE

    Bret, Tristan; Hoffmann, Patrik

    2007-01-01

    The focused electron beam induced deposition process is a promising technique for nano and micro patterning. Electrons can be focused in sub-angström dimensions, which allows atomic-scale resolution imaging, analysis, and processing techniques. Before the process can be used in controlled applications, the precise nature of the deposition mechanism must be described and modelled. The aim of this research work is to present a physical and chemical description of the focused electron beam induc...

  9. Laser controlled deposition of metal microstructures via nondiffracting Bessel beam illumination

    Science.gov (United States)

    Drampyan, Rafael; Leonov, Nikita; Vartanyan, Tigran

    2016-04-01

    The technique of the laser controlled deposition of sodium and rubidium deposits on the sapphire substrate is presented. The metals were deposited on the clean sapphire substrate from the vapor phase contained in the evacuated and sealed cell. We use an axicon to produce a non-diffracting Bessel beam out of the beam got from the cw diode laser with 200 mW power at the wavelength of 532 nm. After 30 minutes of the laser-controlled deposition the substrates were examined in the optical microscope. The obtained metal deposits form the sharp-cut circles with the pitch of 10 μm, coincident with the tens of dark rings of the Bessel beam. Reduction of the laser power leads to the build up of the continuous metal film over the whole substrate.

  10. Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

    Science.gov (United States)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

    1996-01-01

    Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

  11. Light-assisted deposition of CdS thin films

    Science.gov (United States)

    Bacaksiz, E.; Novruzov, V.; Karal, H.; Yanmaz, E.; Altunbas, M.; Kopya, A. I.

    2001-11-01

    The effects of white light illumination during the deposition of CdS thin films in a quasi-closed volume on the structural, photoelectrical and optical properties are investigated. The films were highly c-axis oriented with an increasing intensity of (002) reflection as the illumination increases. The room temperature resistivity values of the CdS films decreased in the range of 107-104 Ω cm. The photosensitivity in the fundamental absorption region and the transparency in the transmission region considerably increased as the illumination increased. Under 100 mW cm-2 insolation, the efficiencies of the CdS/CdTe solar cells based on CdS window materials which were deposited: (1) in the dark; and (2) under an illumination of 150 mW cm-2 were found to be 1.8% and 7.3%, respectively.

  12. Solvent-assisted dewetting during chemical vapor deposition.

    Science.gov (United States)

    Chen, Xichong; Anthamatten, Mitchell

    2009-10-01

    This study examines the use of a nonreactive solvent vapor, tert-butanol, during initiated chemical vapor deposition (iCVD) to promote polymer film dewetting. iCVD is a solventless technique to grow polymer thin films directly from gas phase feeds. Using a custom-built axisymmetric hot-zone reactor, smooth poly(methyl methacrylate) films are grown from methyl methacrylate (MMA) and tert-butyl peroxide (TBPO). When solvent vapor is used, nonequilibrium dewetted structures comprising of randomly distributed polymer droplets are observed. The length scale of observed topographies, determined using power spectral density (PSD) analysis, ranges from 5 to 100 microm and is influenced by deposition conditions, especially the carrier gas and solvent vapor flow rates. The use of a carrier gas leads to faster deposition rates and suppresses thin film dewetting. The use of solvent vapor promotes dewetting and leads to larger length scales of the dewetted features. Control over lateral length scale is demonstrated by preparation of hierarchal "bump on bump" topographies. Vapor-induced dewetting is demonstrated on silicon wafer substrate with a native oxide layer and also on hydrophobically modified substrate prepared using silane coupling. Autophobic dewetting of PMMA from SiOx/Si during iCVD is attributed to a thin film instability driven by both long-range van der Waals forces and short-range polar interactions. PMID:19670895

  13. Photocatalytic activity of tin-doped TiO{sub 2} film deposited via aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chua, Chin Sheng, E-mail: cschua@simtech.a-star.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Tan, Ooi Kiang; Tse, Man Siu [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Ding, Xingzhao [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore)

    2013-10-01

    Tin-doped TiO{sub 2} films are deposited via aerosol assisted chemical vapor deposition using a precursor mixture composing of titanium tetraisopropoxide and tetrabutyl tin. The amount of tin doping in the deposited films is controlled by the volume % concentration ratio of tetrabutyl tin over titanium tetraisopropoxide in the mixed precursor solution. X-ray diffraction analysis results reveal that the as-deposited films are composed of pure anatase TiO{sub 2} phase. Red-shift in the absorbance spectra is observed attributed to the introduction of Sn{sup 4+} band states below the conduction band of TiO{sub 2}. The effect of tin doping on the photocatalytic property of TiO{sub 2} films is studied through the degradation of stearic acid under UV light illumination. It is found that there is a 10% enhancement on the degradation rate of stearic acid for the film with 3.8% tin doping in comparison with pure TiO{sub 2} film. This improvement of photocatalytic performance with tin incorporation could be ascribed to the reduction of electron-hole recombination rate through charge separation and an increased amount of OH radicals which are crucial for the degradation of stearic acid. Further increase in tin doping results in the formation of recombination site and large anatase grains, which leads to a decrease in the degradation rate. - Highlights: ► Deposition of tin-doped TiO{sub 2} film via aerosol assisted chemical vapor depositionDeposited anatase films show red-shifted in UV–vis spectrum with tin-dopants. ► Photoactivity improves at low tin concentration but reduces at higher concentration. ► Improvement in photoactivity due to bandgap narrowing from Sn{sup 4+} band states ► Maximum photoactivity achieved occurs for films with 3.8% tin doping.

  14. Enhancement of neutral beam deposition in hydrogen discharge using carbon pellet injection in LHD

    International Nuclear Information System (INIS)

    The central ion temperature in the large helical device (LHD), as measured by charge-exchange recombination spectroscopy, has been improved to a record 5.6 keV by combining 21 MW of neutral beam heating with the injection of a carbon pellet. The intensity of the neutral beam emission of the hydrogen Balmer line (Hα: n=3 → 2) was observed to weaken along the beam injection axis following the carbon pellet injection due to the increased beam attenuation. The beam-emission intensity was reconstructed by calculating the density distribution, and the beam-stopping coefficients, along a beam injection axis and was found to fit well to the measured beam-emission for a mixed hydrogen and carbon target plasma. The dynamics of the neutral beam deposition power and the carbon fraction were estimated from the beam-emission measurements using data from ADAS. We conclude that the beam deposition power in a carbon pellet discharge is enhanced over that of a pure hydrogen discharge. (author)

  15. Characteristics of deposition process of thin films by ion-beam evaporation

    International Nuclear Information System (INIS)

    Intense pulsed ion-beam evaporation (IBE) has been proposed as one of the new techniques for the preparation of thin films. To understand the basic process of thin film deposition, the energy deposition on the substrate surface by ablation plasma was measured by using calorimetric technique. The characteristics of prepared thin films were studied with deposition energy. In addition, the substrate temperature was calculated, based on the experimental results, by using one-dimensional simulations only considering heat conduction. (author)

  16. Superhydrophobic polymer films via aerosol assisted deposition - Taking a leaf out of nature's book

    International Nuclear Information System (INIS)

    Aerosol assisted deposition of three sets of polymer films based on commercially available resins was achieved on various substrates. The films were characterised using a range of methods, including water contact and slip angle to determine water repellent properties. The aerosol assisted deposition inside the chemical vapour deposition reactor was unique in generating a highly rough superhydrophobic surface with water contact angles up to 170o. During the deposition process, two of the polymers were cured resulting in the development of high surface morphology. It was observed that the polymer that did not cure did not develop such a rough surface resulting in a lower water contact angle (∼ 99o). The superhydrophobic films had a Cassie-Baxter type wetting with water failing to penetrate the surface porosity, water spraying on the surface would bounce off. These films had exceptionally low slide angles of ca 1-2o from the horizontal.

  17. Improvement of copper plating adhesion on silane modified PET film by ultrasonic-assisted electroless deposition

    International Nuclear Information System (INIS)

    Copper thin film on silane modified poly(ethylene terephthalate) (PET) substrate was fabricated by ultrasonic-assisted electroless deposition. The composition and topography of copper plating PET films were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Peel adhesion strength, as high as 16.7 N/cm, was achieved for the planting copper layer to the modified PET substrate with ultrasonic-assisted deposition; however, a relative low value as 11.9 N/cm was obtained for the sample without ultrasonic vibration by the same measurement. The electrical conductivity of Cu film was changed from 7.9 x 104 to 2.1 x 105 S/cm by using ultrasonic technique. Ultrasonic operation has the significant merits of fast deposition and formation of good membranes for electroless deposition of Cu on PET film.

  18. Lateral resolution in focused electron beam-induced deposition: scaling laws for pulsed and static exposure

    International Nuclear Information System (INIS)

    In this work, we review the single-adsorbate time-dependent continuum model for focused electron beam-induced deposition (FEBID). The differential equation for the adsorption rate will be expressed by dimensionless parameters describing the contributions of adsorption, desorption, dissociation, and the surface diffusion of the precursor adsorbates. The contributions are individually presented in order to elucidate their influence during variations in the electron beam exposure time. The findings are condensed into three new scaling laws for pulsed exposure FEBID (or FEB-induced etching) relating the lateral resolution of deposits or etch pits to surface diffusion and electron beam exposure dwell time for a given adsorbate depletion state. (orig.)

  19. Microstructure and properties of silver films obtained using ion beam composite deposition

    International Nuclear Information System (INIS)

    Using ion beam composite deposition method Magnetron sputtering deposition, soft metal solid lubricant of Ag film was grown on 9Crl8 steel substrate. The microstructures and friction properties were measured by means of the hundred cell knife scratch method, MS-T3000 multi-meter friction and wear testing and scanning electron microscopy. The results showed that compared with the magnetron sputtering method, a transition layer bonded with chemical metallurgy and mechanical engagement is formed after ion beam composite deposition. The transition layer can be attributed to the strong adhesion between the film and the substrate. (authors)

  20. Microstructure and mechanical properties of Cr-N coatings by ion-beam-assisted magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Tian Linhai [Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Zhu Xiaodong [State Key Laboratory for Mechanical Behaviour of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Tang, Bin [Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)], E-mail: tangbin@tyut.edu.cn; Pan Junde [Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); He Jiawen [State Key Laboratory for Mechanical Behaviour of Materials, Xi' an Jiaotong University, Xi' an 710049 (China)

    2008-06-15

    Cr-N coatings were deposited using the ion-beam-assisted magnetron sputtering technique. The microstructure and mechanical properties of Cr-N coatings were found to be dependent on the ion bombardment energy. The microstructure of the coatings changes from columnar structure to fine and dense grains when the ion bombardment energy increases from 0 to 800 eV and to equiaxial grains for an ion energy of 1200 eV. The coatings average grain size, which is determined by the Voigt profile function, decreases from 20.3 nm at an ion energy of 0 eV to 8.8 nm at 800 eV and further increases to 21.5 nm at 1200 eV. Both the hardness and fracture toughness of the coatings are improved when the ion energy increases from 0 to 800 eV, which is related to the decrease of grain size. The grain size of the coating grown at an energy of 1200 eV is close to that of 0 eV, but the hardness and fracture toughness at 1200 eV are higher. This suggests that the improvement of hardness and fracture toughness is also related to the increased densification of the coatings caused by ion bombardment.

  1. Beam-induced energy deposition issues in the Very Large Hadron Collider

    CERN Document Server

    Mokhov, N V; Foster, G W

    2001-01-01

    Energy deposition issues are extremely important in the Very Large Hadron Collider (VLHC) with huge energy stored in its 20 TeV (Stage-1) and 87.5 TeV (Stage-2) beams. The status of the VLHC design on these topics, and possible solutions of the problems are discussed. Protective measures are determined based on the operational and accidental beam loss limits for the prompt radiation dose at the surface, residual radiation dose, ground water activation, accelerator components radiation damage and quench stability. The beam abort and beam collimation systems are designed to protect accelerator from accidental and operational beam losses, IP region quadrupoles from irradiation by the products of beam-beam collisions, and to reduce the accelerator-induced backgrounds in the detectors. (7 refs).

  2. Functional porphyrin thin films deposited by matrix assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Atomistilor 409, Bucharest-Magurele (Romania); Popescu, C.; Popescu, A.C.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Atomistilor 409, Bucharest-Magurele (Romania); Ciucu, A.A. [Univeristy of Bucharest, Chemistry Department, Bucharest (Romania); Andronie, A.; Iordache, S.; Stamatin, I. [University of Bucharest, 3 Nano-SAE Research Center, P.O. Box MG-38, Bucharest-Magurele (Romania); Fagadar-Cosma, E. [Institute of Chemistry Timisoara of Romanian Academy, Department of Organic Chemistry, 300223 Timisoara (Romania); Chrisey, D.B. [Rensselaer Polytechnic Institute, School of Engineering, Department of Materials Science and Engineering, Troy 12180-3590, NY (United States)

    2010-05-25

    We report the first successful deposition of functionalized and nanostructured Zn(II)- and Co(II)-metalloporphyrin thin films by matrix assisted pulsed laser evaporation onto silicon wafers, quartz plates and screen-printed electrodes. The deposited nanostructures have been characterized by Raman spectrometry and cyclic voltammetry. The novelty of our contribution consists of the evaluation of the sensitivity of the MAPLE-deposited Zn(II)- and Co(II)-metalloporphyrin thin films on screen-printed carbon nanotube electrodes when challenged with dopamine.

  3. Functional porphyrin thin films deposited by matrix assisted pulsed laser evaporation

    International Nuclear Information System (INIS)

    We report the first successful deposition of functionalized and nanostructured Zn(II)- and Co(II)-metalloporphyrin thin films by matrix assisted pulsed laser evaporation onto silicon wafers, quartz plates and screen-printed electrodes. The deposited nanostructures have been characterized by Raman spectrometry and cyclic voltammetry. The novelty of our contribution consists of the evaluation of the sensitivity of the MAPLE-deposited Zn(II)- and Co(II)-metalloporphyrin thin films on screen-printed carbon nanotube electrodes when challenged with dopamine.

  4. Titania-assisted electron-beam and synchrotron lithography

    Science.gov (United States)

    Skorb, Ekaterina V.; Grützmacher, Detlev; Dais, Christian; Guzenko, Vitaliy A.; Sokolov, Valeriy G.; Gaevskaya, Tatjana V.; Sviridov, Dmitry V.

    2010-08-01

    Novel imaging layer technology for electron-beam and extreme-ultraviolet lithographic processes based upon generation of Pd nanoparticles in the Pd2 + -loaded TiO2 films was developed. The electroless metallization of the patterned TiO2:Pd2 + films yields both negative and positive nickel images with resolution down to ~ 100 nm.

  5. Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing

    International Nuclear Information System (INIS)

    Techniques of film deposition by co-evaporation, ion-beam assisted mixing, oxygen ion implantation, and thermal annealing were been combined in a novel way to study processing of erbium-in-silicon thin-film materials for optoelectronics applications. Structures with erbium concentrations above atomic solubility in silicon and below that of silicide compounds were prepared by vacuum co-evaporation from two elemental sources to deposit 200-270 nm films on crystalline silicon substrates. Ar+ ions were implanted at 300 keV. Oxygen was incorporated by O+-ion implantation at 130 keV. Samples were annealed at 600 deg. C in vacuum. Concentration profiles of the constituent elements were obtained by Rutherford backscattering spectrometry. Results show that diffusion induced by ion-beam mixing and activated by thermal annealing depends on the deposited Si-Er profile and reaction with implanted oxygen. Room temperature photoluminescence spectra show Er3+ transitions in a 1480-1550 nm band and integrated intensities that increase with the oxygen-to-erbium ratio.

  6. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    Directory of Open Access Journals (Sweden)

    Brett B. Lewis

    2015-04-01

    Full Text Available Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IVMe3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.

  7. Structural properties of thermoelectric CoSb3 skutterudite thin films prepared by molecular beam deposition

    International Nuclear Information System (INIS)

    Highlights: • Different methods were used to deposit Co–Sb thin film by molecular beam deposition. • The phase formation is strongly dependent on the Sb content of the film. • The fabrication of high-quality single phase skutterudite thin films could be shown. • The grain size of the films is very sensitive to the used deposition parameters. • It was shown, that large deposition rates support the formation of parasitic phases. - Abstract: The research field of thermoelectricity was renewed by the progress made in nanostructuring approaches and by the investigation of new material groups as skutterudites, whose most promising representative is CoSb3. In this work Co–Sb thin films with a thickness of 30 nm were deposited by molecular beam deposition at different substrate temperatures as well as on non-heated substrates followed by a post-annealing step. An extended investigation of the phase formation in dependence of deposition method and parameters, film composition, and post-treatment is given. The presented results provide different routes to achieve high quality single phase films. It was also demonstrated that the grain size of the CoSb3 thin films is very sensitive to the used deposition method and especially on the substrate temperature during deposition. A controllable grain size by changing the deposition parameters could be a key feature for the optimization of the thermoelectric properties, since especially the thermal conductivity should strongly depend on the grain size due to enhanced grain boundary scattering of phonons

  8. UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

    International Nuclear Information System (INIS)

    A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR-PLD). For the first time resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) was successfully demonstrated on a luminescent polymer system. In addition to this, an excimer laser has been used for UV-MAPLE depositions at 193 and 248-nm irradiation. Films deposited onto NaCl and quartz substrates were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence

  9. Beam induced deposition of platinum using a helium ion microscope

    NARCIS (Netherlands)

    Sanford, C.A.; Stern, L.; Barriss, L.; Farkas, L.; DiManna, M.; Mello, R.; Maas, D.J.; Alkemade, P.F.A.

    2009-01-01

    Helium ion microscopy is now a demonstrated practical technology that possesses the resolution and beam currents necessary to perform nanofabrication tasks, such as circuit edit applications. Due to helium’s electrical properties and sample interaction characteristics relative to gallium, it is like

  10. Beam induced deposition of platinum using a helium ion microscope

    NARCIS (Netherlands)

    Sanford, C.A.; Stern, L.; Barriss, L.; Farkas, L.; DiManna, M.; Mello, R.; Maas, D.J.; Alkemade, P.F.A.

    2009-01-01

    Helium ion microscopy is now a demonstrated practical technology that possesses the resolution and beam currents necessary to perform nanofabrication tasks, such as circuit edit applications. Due to helium's electrical properties and sample interaction characteristics relative to gallium, it is like

  11. Energy deposition, heat flow, and rapid solidification during laser and electron beam irradiation of materials

    International Nuclear Information System (INIS)

    The fundamentals of energy deposition, heat flow, and rapid solidification during energy deposition from lasers and electron beams is reviewed. Emphasis is placed on the deposition of energy from pulsed sources (10 to 100 ns pulse duration time) in order to achieve high heating and cooling rates (108 to 10100C/s) in the near surface region. The response of both metals and semiconductors to pulsed energy deposition is considered. Guidelines are presented for the choice of energy source, wavelength, and pulse duration time

  12. Diffusion and Interface Reaction of Cu/Si (100) Films Prepared by Cluster Beam Deposition

    International Nuclear Information System (INIS)

    Cu thin films are deposited on Si (100) substrates by neutral cluster beams and ionized cluster beams. The atomic diffusion and interface reaction between the Cu films and the Si substrates of as-deposited and annealed at different temperatures (230°C, 450°C, 500°C and 600°C) are investigated by Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Some significant results are obtained on the following aspects: (1) For the Cu/Si(100) samples prepared by neutral cluster beams and ionized cluster beams at Va = 0kV, atomic diffusion phenomena are observed clearly in the as-deposited samples. With the increase of annealing temperature, the interdiffusion becomes more apparent. However, the diffusion intensities of the RBS spectra of the Cu/Si(100) films using neutral cluster beams are always higher than that of the Cu/Si(100) films using ionized cluster beams at Va=0kV in the as-deposited and samples annealed at the same temperature. The compound of Cu3Si is observed in the as-deposited samples. (2) For the Cu/Si(100) samples prepared by ionized cluster beams at Va=1, 3, 5kV, atomic diffusion phenomena are observed in the as-deposited samples at Va=1, 5kV. For the samples prepared at Va = 3kV, the interdiffusion phenomenon is observed until 500°C annealing temperature. The reason for the difference is discussed. (atomic and molecular physics)

  13. Study of electrospray assisted electrophoretic deposition of carbon nanotubes on insulator substrates

    Science.gov (United States)

    Kanakamedala, Kalyan; DeSoto, Jared; Sarkar, Anirban; Race, Theda Daniels

    2015-11-01

    In recent years, electrophoretic deposition (EPD) has been adopted as a cost-effective and reliable single-step solution-based room temperature coating method for carbon nanotubes (CNTs), predominantly on conducting surfaces. Contrary to this general pre-requisite of conductive target substrates, in this work we have explored a fabrication strategy for the scalable deposition of CNTs on insulating glass surfaces by the sequential combination of electrospraying and the EPD technique. This combined process flow has been referred to as "electrospray-assisted EPD", where an initial CNT coating on glass substrates is obtained by electrospraying which, in turn, further assists CNT film growth by EPD. The successful integration of the electrospray technique in the EPD process flow also eliminates the need for surface functionalization of the insulator substrates prior to the deposition step. Electrospray-assisted EPD has resulted in the successful fabrication of uniform, homogenous, and thick CNT deposits (˜4.5 - 5 μm) with precise thickness control. A detailed investigation of the effect of the initial electrosprayed coating on the final CNT film growth and thickness is also presented in this report. This research endeavor presents a significant opportunity for the integration of this deposition model into a wider platform of materials research and technology, chemical sensing, and applications based upon printable and flexible electronics. [Figure not available: see fulltext.

  14. Titania-assisted electron-beam and synchrotron lithography

    Energy Technology Data Exchange (ETDEWEB)

    Skorb, Ekaterina V; Sviridov, Dmitry V [Chemistry Department, Belarusian State University, Leningradskaya 14, 22030 Minsk (Belarus); Gruetzmacher, Detlev; Dais, Christian [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, CH-5232 Villigen (Switzerland); Guzenko, Vitaliy A [Department of Bio- and Nanosystems, Research Center Juelich, D-52425 Juelich (Germany); Sokolov, Valeriy G; Gaevskaya, Tatjana V, E-mail: skorb@mpikg.mpg.de [Institute for Physico-Chemical Problems, Belarusian State University, Leningradskaya 14, 22030 Minsk (Belarus)

    2010-08-06

    Novel imaging layer technology for electron-beam and extreme-ultraviolet lithographic processes based upon generation of Pd nanoparticles in the Pd{sup 2+}-loaded TiO{sub 2} films was developed. The electroless metallization of the patterned TiO{sub 2}:Pd{sup 2+} films yields both negative and positive nickel images with resolution down to {approx} 100 nm.

  15. A prototype of a beam steering assistant tool for accelerator operations

    International Nuclear Information System (INIS)

    The CEBAF accelerator provides nuclear physics experiments at Jefferson Lab with high quality electron beams. Three experimental end stations can simultaneously receive the beams with different energies and intensities. For each operational mode, the accelerator setup procedures are complicated and require very careful checking of beam spot sizes and positions on multiple beam viewers. To simplify these procedures and make them reproducible, a beam steering assistant GUI tool has been created. The tool is implemented as a multi-window control screen. The screen has an interactive graphical object window, which is an overlay on top of a digitized live video image from a beam viewer. It allows a user to easily create and edit any graphical objects consisting of text, ellipses, and lines, right above the live beam viewer image and then save them in a file that is called a beam steering template. The template can show, for example, the area within which the beam must always be on the viewer. Later, this template can be loaded in the interactive graphical object window to help accelerator operators steer the beam to the specified area on the viewer

  16. Automated Geometry assisted PEC for electron beam direct write nanolithography

    Energy Technology Data Exchange (ETDEWEB)

    Ocola, Leonidas E.; Gosztola, David J.; Rosenmann, Daniel; Lopez, Gerald Gabriel

    2015-12-01

    Nanoscale geometry assisted proximity effect correction (NanoPEC) is demonstrated to improve PEC for nanoscale structures over standard PEC, in terms of feature sharpness for sub-100 nm structures. The method was implemented onto an existing commercially available PEC software. Plasmonic arrays of crosses were fabricated using regular PEC and NanoPEC, and optical absorbance was measured. Results confirm that the improved sharpness of the structures leads to increased sharpness in the optical absorbance spectrum features. We also demonstrated that this method of PEC is applicable to arbitrary shaped structures beyond crosses.

  17. Modeling evaporation, ion-beam assist, and magnetron sputtering of thin metal films over realistic time scales

    Science.gov (United States)

    Blackwell, S.; Smith, R.; Kenny, S. D.; Walls, J. M.

    2012-07-01

    A long-time-scale dynamics technique has been used to model the evaporation, ion-beam assist, and magnetron sputtering of thin metal films over realistic time scales. Two fcc metals have been investigated: silver and aluminum. We illustrate how the technique can be used to model growth of these films over experimental time scales, while investigating individual growth mechanisms and surface diffusion events. Long-time dynamics is achieved through an on-the-fly kinetic Monte Carlo method, which determines diffusion pathways and barriers, in parallel, with no prior knowledge of the involved transitions. It was found that Ag has the ability to grow smooth surfaces, using several mechanisms including multiple-atom concerted motion, exchange mechanisms, and damage and repair systems. Ag {111} and {100} grew dense, complete, and crystalline film when sputtering was simulated, whereas evaporation produced incomplete layers. The inclusion of Ar in the ion-beam-assisted evaporation of Ag {111} aided growth by transferring more energy to the surface atoms allowing increased diffusion. Al {111}, however, shows slightly different patterns; growth via evaporation and magnetron sputtering shows only slight differences and the inclusion of the ion-beam assist actually damages the film beyond repair, producing subsurface Ar clusters where Al atoms were displaced creating voids throughout the film. Al {100}, similar to Ag {100}, grows denser and more complete film when grown via sputtering rather than evaporation. Results show that the energy of the deposition method used plays a vital role in the resulting thin film and substrate quality.

  18. Enhanced solar water splitting of electron beam irradiated titania photoanode by electrostatic spray deposition

    International Nuclear Information System (INIS)

    Highlights: • TiO2 thin-film photoelectrodes were prepared by electrostatic spray deposition (ESD). • Photoactivity of an electrosprayed titania film could be greatly enhanced by the use of electron beam irradiation. • The application of the electron beam was found to increase the photocurrent density threefold over a non-electron beam-treated film. - Abstract: Surface modifications are often made to titania films to improve its photocatalytic performance in water splitting. We herein introduced electron beam irradiation to enhance the photocatalytic activities of an electro-sprayed titania film for solar water splitting application. The film was fabricated by a facile and scalable electrostatic spraying deposition. According to SEM, X-ray diffraction, and Raman data, electron beam densified the film and improved its crystallinity. Absorbance data indicated that the band gap of the E-beam film reduced, which in turn covered the wider range of absorbed light. These modifications increased oxygen vacancies or defects, which enhanced mobility and separation of electrons and holes. As a result, the E-beam film exhibited a threefold increase in the photocurrent density, compared to that of the non-E-beam film. This electrosprayed titania film was used as a photoanode while the reference and counter electrodes involved in the generation of hydrogen were made of Ag/AgCl and platinum, respectively. The intensity of the UV light illumination used was 1 mW/cm2

  19. Electrochemical evaluation of under-deposit corrosion and its inhibition using the wire beam electrode method

    Energy Technology Data Exchange (ETDEWEB)

    Tan Yongjun, E-mail: yj.tan@curtin.edu.a [Western Australian Corrosion Research Group, Department of Chemistry, Curtin University, GPO Box U1987, Perth (Australia); Fwu, Young; Bhardwaj, Kriti [Western Australian Corrosion Research Group, Department of Chemistry, Curtin University, GPO Box U1987, Perth (Australia)

    2011-04-15

    Research highlights: A new experiment method for evaluating under-deposit corrosion and its inhibitors. Under-deposit corrosion did not occur in a CO{sub 2} saturated pure brine solution. Inhibitor imidazoline addition and O{sub 2} contamination initiated under-deposit corrosion. Inhibitor imidazoline reduced general corrosion but enhanced localised corrosion. - Abstract: A new experimental method has been applied to evaluate under-deposit corrosion and its inhibition by means of an electrochemically integrated multi-electrode array, namely the wire beam electrode (WBE). Maps showing galvanic current and corrosion potential distributions were measured from a WBE surface that was partially covered by sand. Under-deposit corrosion did not occur during the exposure of the WBE to carbon dioxide saturated brine under ambient temperature. The introduction of corrosion inhibitor imidazoline and oxygen into the brine was found to significantly affect the patterns and rates of corrosion, leading to the initiation of under-deposit corrosion over the WBE.

  20. Tribological properties of ion beam deposited diamond-like carbon film on silicon nitride

    International Nuclear Information System (INIS)

    The present article reports on the physical characterization and tribological properties of diamond-like carbon (DLC) films deposited on structural Si3N4 substrates. The films were deposited by the direct ion beam deposition technique. The ion beam was produced by plasma discharge of pre-mixed methane and hydrogen gas in a Kaufman-type ion source. The deposited films were found to be amorphous and contained about 70% carbon and 30% hydrogen. The friction coefficient of an uncoated Si3N4 ball on a DLC coated Si3N4 disc starts at about 0.2, then decreases rapidly to 0.1-0.15 with increasing sliding distance. Increasing humidity results in a slight increase in friction coefficient, but a significant decrease in wear factor. The wear factor for the tests at ≅60% rh (relative humidity) are about an order of magnitude smaller than the tests at 3% rh. (orig.)

  1. Birth: A Neutral Beam Deposition Code for Non-Circular Tokamak Plasma

    International Nuclear Information System (INIS)

    A new neutral beam deposition code has been developed which is capable of calculating fast ion deposition profiles including the orbit correction. The code incorporates any injection geometry and a non-circular cross-section plasma with a variable elongation and an outward shift of the magnetic flux surface. Typical CPU time on a KL DEC-10 computer is 10--20 s and 5--10 s with and without the orbit correction, respectively. This is shorter by an order of magnitude than that of other codes, e.g., Monte Carlo beam deposition codes. The power deposition profile calculated by this code is in good agreement with that calculated by the Monte Carlo code which was developed to calculate the complete behaviors of the fast ions in circular plasmas

  2. Electron-beam-directed vapor deposition of multifunctional structures for electrochemical storage

    Science.gov (United States)

    Queheillalt, Douglas T.; Hass, Derek D.; Wadley, Haydn N. G.

    2002-07-01

    Multifunctional structures are those, which combine load- bearing support in addition to additional functions such as mechanical actuation, distributed power supply or thermal management. Electron beam - directed vapor deposition technology has been used to investigate deposition methodologies for two multifunctional battery concepts: a linear/truss base nickel - metal hydride and a fiber based solid-state Li+ ion multifunctional battery. Porous nickel coatings for the cathodes and porous rare earth metal coatings based on La and Ni or Ti and Zr for the anodes are being investigated for the nickel - metal hydride system; where LiV2O5, LiPON, and Sn3N4 are being investigated for the Li+ ion based system. Electron beam - directed vapor deposition is being used for deposition of all cathode/anode structures to provide an economical method for the development of these novel multifunctional structures.

  3. Growth mechanism of planar or nanorod structured tungsten oxide thin films deposited via aerosol assisted chemical vapour deposition (AACVD)

    Energy Technology Data Exchange (ETDEWEB)

    Ling, Min; Blackman, Chris [Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom)

    2015-07-15

    Aerosol assisted chemical vapour deposition (AACVD) is used to deposit tungsten oxide thin films from tungsten hexacarbonyl (W(CO){sub 6}) at 339 to 358 C on quartz substrate. The morphologies of as-deposited thin films, which are comprised of two phases (W{sub 25}O{sub 73} and W{sub 17}O{sub 47}), vary from planar to nanorod (NR) structures as the distance from the inlet towards the outlet of the reactor is traversed. This is related to variation of the actual temperature on the substrate surface (ΔT = 19 C), which result in a change in growth mode due to competition between growth rate (perpendicular to substrate) and nucleation rate (parallel to substrate). When the ratio of perpendicular growth rate to growth rate contributed by nucleation is higher than 7.1, the as-deposited tungsten oxide thin film forms as NR. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Carbon nitride deposition onto steel substrates by radio frequency plasma assisted pulsed laser deposition with substrate heating

    International Nuclear Information System (INIS)

    Carbon nitride (CNx) films are promising candidates for tribological application due to its low friction coefficient. However, the adhesion strength of the film on steel substrate was poor at elevated temperature during deposition. In this study, CNx film was fabricated on bearing steel (SUJ2) and austenitic stainless steel (AISI304) substrates with radio frequency (RF) plasma assisted pulsed laser deposition in nitrogen gas atmosphere. Adhesion strength of the film on the steel substrates was improved by blasting or polishing of the substrate surface before deposition. Thick CNx film was deposited on the steel substrates by substrate heating and substrate pretreatment. The atomic composition ratio of N/C and the bonding ratio of sp3 / (sp2 + sp3) increased with substrate temperature. Maximum atomic composition ratio of N/C was 0.155 on SUJ2 substrate and 0.171 on AISI304 substrate at 40 W of RF power and 673 K of substrate temperature. The maximum adhesion strength of 14.8 MPa was obtained at blasted SUJ2 substrate. The maximum knoop hardness of 8.94 GPa and the lowest friction coefficient of 0.072 were obtained on SUJ2 substrate with polished no. 150 at 40 W of RF power and 673 K of substrate temperature.

  5. Carbon nitride deposition onto steel substrates by radio frequency plasma assisted pulsed laser deposition with substrate heating

    Energy Technology Data Exchange (ETDEWEB)

    Yasui, Toshiaki, E-mail: yasui@me.tut.ac.jp [Department of Mechanical Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); Kimura, Shingo [Department of Production Systems Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); Nishikawa, Ryutaro; Fukumoto, Masahiro [Department of Mechanical Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan)

    2012-11-15

    Carbon nitride (CNx) films are promising candidates for tribological application due to its low friction coefficient. However, the adhesion strength of the film on steel substrate was poor at elevated temperature during deposition. In this study, CNx film was fabricated on bearing steel (SUJ2) and austenitic stainless steel (AISI304) substrates with radio frequency (RF) plasma assisted pulsed laser deposition in nitrogen gas atmosphere. Adhesion strength of the film on the steel substrates was improved by blasting or polishing of the substrate surface before deposition. Thick CNx film was deposited on the steel substrates by substrate heating and substrate pretreatment. The atomic composition ratio of N/C and the bonding ratio of sp{sup 3} / (sp{sup 2} + sp{sup 3}) increased with substrate temperature. Maximum atomic composition ratio of N/C was 0.155 on SUJ2 substrate and 0.171 on AISI304 substrate at 40 W of RF power and 673 K of substrate temperature. The maximum adhesion strength of 14.8 MPa was obtained at blasted SUJ2 substrate. The maximum knoop hardness of 8.94 GPa and the lowest friction coefficient of 0.072 were obtained on SUJ2 substrate with polished no. 150 at 40 W of RF power and 673 K of substrate temperature.

  6. Optical and Scratch Resistant Properties of Diamondlike Carbon Films Deposited with Single and Dual Ion Beams

    Science.gov (United States)

    Kussmaul, Michael T.; Bogdanski, Michael S.; Banks, Bruce A.; Mirtich, Michael J.

    1993-01-01

    Amorphous diamond-like carbon (DLC) films were deposited using both single and dual ion beam techniques utilizing filament and hollow cathode ion sources. Continuous DLC films up to 3000 A thick were deposited on fused quartz plates. Ion beam process parameters were varied in an effort to create hard, clear films. Total DLC film absorption over visible wavelengths was obtained using a Perkin-Elmer spectrophotometer. An ellipsometer, with an Ar-He laser (wavelength 6328 A) was used to determine index of refraction for the DLC films. Scratch resistance, frictional, and adherence properties were determined for select films. Applications for these films range from military to the ophthalmic industries.

  7. CdS thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

  8. CdS thin films prepared by laser assisted chemical bath deposition

    International Nuclear Information System (INIS)

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties

  9. Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings

    Directory of Open Access Journals (Sweden)

    Januś M.

    2015-06-01

    Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

  10. Structural Evolution of SiC Films During Plasma-Assisted Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    Evolution of chemical bonding configurations for the films deposited from hexamethyldisiloxane (HMDSO) diluted with H2 during plasma assisted chemical vapour deposition is investigated. In the experiment a small amount of CH4 was added to adjust the plasma environment and modify the structure of the deposited films. The measurements of Raman spectroscopy and X-ray diffraction (XRD) revealed the production of 6H-SiC embedded in the amorphous matrix without the input of CH4. As CH4 was introduced into the deposition reaction, the transition of 6H-SiC to cubic SiC in the films took place, and also the film surfaces changed from a structure of ellipsoids to cauliflower-like shapes. With a further increase of CH4 in the flow ratio, the obtained films varied from Si-C bonding dominant to a sp2/sp3 carbon-rich composition. (low temperature plasma)

  11. The minimum amount of "matrix " needed for matrix-assisted pulsed laser deposition of biomolecules

    DEFF Research Database (Denmark)

    Tabetah, Marshall; Matei, Andreea; Constantinescu, Catalin;

    2014-01-01

    The ability of matrix-assisted pulsed laser evaporation (MAPLE) technique to transfer and deposit high-quality thin organic, bioorganic, and composite films with minimum chemical modification of the target material has been utilized in numerous applications. One of the outstanding problems in MAPLE...... the ejection of intact lysozyme molecules from pressed lysozyme targets containing small amounts of residual water. The results of this study suggest a new approach for deposition of thin films of bioorganic molecules with minimum chemical modification of the molecular structure and minimum...... film deposition, however, is the presence of residual solvent (matrix) codeposited with the polymer material and adversely affecting the quality of the deposited films. In this work, we investigate the possibility of alleviating this problem by reducing the amount of matrix in the target. A series of...

  12. Using ion beams to tune the nanostructure and optical response of co-deposited Ag : BN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Toudert, J [Laboratoire de Metallurgie Physique, UMR CNRS 6630, Batiment SP2MI, Boulevard Marie et Pierre Curie, Teleport 2 Futuroscope, 86962 Chasseneuil (France); Babonneau, D [Laboratoire de Metallurgie Physique, UMR CNRS 6630, Batiment SP2MI, Boulevard Marie et Pierre Curie, Teleport 2 Futuroscope, 86962 Chasseneuil (France); Camelio, S [Laboratoire de Metallurgie Physique, UMR CNRS 6630, Batiment SP2MI, Boulevard Marie et Pierre Curie, Teleport 2 Futuroscope, 86962 Chasseneuil (France); Girardeau, T [Laboratoire de Metallurgie Physique, UMR CNRS 6630, Batiment SP2MI, Boulevard Marie et Pierre Curie, Teleport 2 Futuroscope, 86962 Chasseneuil (France); Yubero, F [Instituto de Ciencia de Materiales de Sevilla, CSIC, Isla de la Cartuja, 41092 Isla de la Cartuja, Sevilla (Spain); Espinos, J P [Instituto de Ciencia de Materiales de Sevilla, CSIC, Isla de la Cartuja, 41092 Isla de la Cartuja, Sevilla (Spain); Gonzalez-Elipe, A R [Instituto de Ciencia de Materiales de Sevilla, CSIC, Isla de la Cartuja, 41092 Isla de la Cartuja, Sevilla (Spain)

    2007-08-07

    The present study is devoted to co-deposited Ag : BN nanocermet thin films and is focused on the influence of ion irradiation conditions on their structural and linear optical properties. Ion irradiation was performed in situ during the growth of the nanocermets using a 50 eV assistance beam (nitrogen/argon or nitrogen-ion assistance) and ex situ on as-grown films using a 120 keV argon-ion beam (post-irradiation). Grazing incidence small-angle x-ray scattering measurements show that (i) as-grown N-assisted films contain prolate spheroidal clusters (height-to-diameter ratio H/D {approx} 1.8), (ii) N/Ar-ion assistance leads to the formation of more elongated clusters (H/D {approx} 2.1) and (iii) post-irradiation leads to a decrease of H/D to a value close to 1. These results are discussed on the basis of atomic diffusion processes involved during the growth of the nanocermets and during the post-irradiation. The optical transmittance spectra of these films measured at normal incidence display one absorption band, due to the excitation of the (1,1) plasmon mode of the clusters. In the case of the as-grown films, an additional band appears at oblique incidence for P-polarized light, as a consequence of the excitation of the (1,0) plasmon mode of the clusters. Our results show that the spectral position of the absorption bands (which can be tuned in the 400-600 nm range) depends on the H/D ratio of the clusters, in good agreement with calculations of optical transmittance considering the nanocomposite layer as a uniaxial anisotropic medium whose dielectric tensor is described by an anisotropic Maxwell-Garnett model.

  13. Using ion beams to tune the nanostructure and optical response of co-deposited Ag : BN thin films

    International Nuclear Information System (INIS)

    The present study is devoted to co-deposited Ag : BN nanocermet thin films and is focused on the influence of ion irradiation conditions on their structural and linear optical properties. Ion irradiation was performed in situ during the growth of the nanocermets using a 50 eV assistance beam (nitrogen/argon or nitrogen-ion assistance) and ex situ on as-grown films using a 120 keV argon-ion beam (post-irradiation). Grazing incidence small-angle x-ray scattering measurements show that (i) as-grown N-assisted films contain prolate spheroidal clusters (height-to-diameter ratio H/D ∼ 1.8), (ii) N/Ar-ion assistance leads to the formation of more elongated clusters (H/D ∼ 2.1) and (iii) post-irradiation leads to a decrease of H/D to a value close to 1. These results are discussed on the basis of atomic diffusion processes involved during the growth of the nanocermets and during the post-irradiation. The optical transmittance spectra of these films measured at normal incidence display one absorption band, due to the excitation of the (1,1) plasmon mode of the clusters. In the case of the as-grown films, an additional band appears at oblique incidence for P-polarized light, as a consequence of the excitation of the (1,0) plasmon mode of the clusters. Our results show that the spectral position of the absorption bands (which can be tuned in the 400-600 nm range) depends on the H/D ratio of the clusters, in good agreement with calculations of optical transmittance considering the nanocomposite layer as a uniaxial anisotropic medium whose dielectric tensor is described by an anisotropic Maxwell-Garnett model

  14. Ion-beam assisted laser fabrication of sensing plasmonic nanostructures

    CERN Document Server

    Kuchmizhak, Aleksandr; Vitrik, Oleg; Kulchin, Yuri; Milichko, Valentin; Makarov, Sergey; Kudryashov, Sergey

    2015-01-01

    Simple high-performance two-stage hybrid technique was developed for fabrication of different plasmonic nanostructures, including nanorods, nanorings, as well as more complex structures on glass substrates. In this technique a thin noble metal film on a dielectric substrate is irradiated by a tightly focused single nanosecond laser pulse and then the modified region is slowly polished by an accelerated argon ion (Ar+) beam. As a result, each nanosecond laser pulse locally modifies the initial metal film through initiation of fast melting and subsequent hydrodynamic processes, while the following Ar+-ion polishing removes the rest of the film, revealing the hidden topography features and fabricating separate plasmonic structures on the glass substrate. We demonstrate that the shape and lateral size of the resulting functional plasmonic nanostructures depends on the laser pulse energy and metal film thickness, while subsequent Ar+-ion polishing enables to vary height of the resulting nanostructures. The plasmon...

  15. Energy deposition of heavy ions in the regime of strong beam-plasma correlations.

    Science.gov (United States)

    Gericke, D O; Schlanges, M

    2003-03-01

    The energy loss of highly charged ions in dense plasmas is investigated. The applied model includes strong beam-plasma correlation via a quantum T-matrix treatment of the cross sections. Dynamic screening effects are modeled by using a Debye-like potential with a velocity dependent screening length that guarantees the known low and high beam velocity limits. It is shown that this phenomenological model is in good agreement with simulation data up to very high beam-plasma coupling. An analysis of the stopping process shows considerably longer ranges and a less localized energy deposition if strong coupling is treated properly. PMID:12689203

  16. Ion Beam Induced Surface Modulations from Nano to Pico: Optimizing Deposition During Erosion and Erosion During Deposition

    International Nuclear Information System (INIS)

    Ion beams of sufficient energy to erode a surface can lead to surface modulations that depend on the ion beam, the material surface it impinges, and extrinsic parameters such as temperature and geometric boundary conditions. Focused Ion Beam technology both enables site-specific placement of these modulations and expedites research through fast, high dose and small efficient use of material. The DualBeam (FIB/SEM) enables in situ metrology, with movies observing ripple formation, wave motion, and the influence of line defects. Nanostructures (ripples of >400nm wavelength to dots spaced o etching enables deposition of organized structures 1000 times smaller than the aforementioned, video-recorded nanostructures. Orientation and position of these picostructures (naturally quantized by their atomic spacings) may be controlled by the same parameters as for nanostructures (e.g. ion inclination and imposed boundary conditions, which are flexibly regulated by FIB). Judicious control of angles during FIB-CVD growth stimulates erosion with directionality that produces surface modulations akin to those observed for sputtering. Just as a diamond surface roughens from 1-D ripples to 2-D steps with increasing angle of ion sputtering, so do ripples and steps appear on carbon-grown surfaces with increase in angle of FIB-CVD. Ion beam processing has been a stalwart of the microelectronics industry, is now a vital tool for research of self-organizing nanostructures, and promises to be a focus for future picotechnology

  17. BIRTH: a beam deposition code for non-circular tokamak plasmas

    International Nuclear Information System (INIS)

    A new beam deposition code has been developed which is capable of calculating fast ion deposition profiles including the orbit correction. The code incorporates any injection geometry and a non-circular cross section plasma with a variable elongation and an outward shift of the magnetic flux surface. Typical cpu time on a DEC-10 computer is 10 - 20 seconds and 5 - 10 seconds with and without the orbit correction, respectively. This is shorter by an order of magnitude than that of other codes, e.g., Monte Carlo codes. The power deposition profile calculated by this code is in good agreement with that calculated by a Monte Carlo code. (author)

  18. Electronic properties of ion implanted crystalline polymer thin film deposited by ionized cluster beam

    International Nuclear Information System (INIS)

    Polyethylene thin film deposited by the ionized cluster beam deposition technique shows preferential crystal orientation at optimum deposit condition, and the lattice parameters of the crystalline PE film are in good agreement with those of the single crystal PE. The crystalline PE film reveals that the number of side chains is reduced. The conductivity of Li+, Na+ and K+ implanted crystalline PE films has a close correlation with defects generated by ion irradiation, and the conduction mechanism turns out to be the one-dimensional hopping conduction. (orig.)

  19. Ion-beam assisted laser fabrication of sensing plasmonic nanostructures

    Science.gov (United States)

    Kuchmizhak, Aleksandr; Gurbatov, Stanislav; Vitrik, Oleg; Kulchin, Yuri; Milichko, Valentin; Makarov, Sergey; Kudryashov, Sergey

    2016-01-01

    Simple high-performance, two-stage hybrid technique was developed for fabrication of different plasmonic nanostructures, including nanorods, nanorings, as well as more complex structures on glass substrates. In this technique, a thin noble-metal film on a dielectric substrate is irradiated by a single tightly focused nanosecond laser pulse and then the modified region is slowly polished by an accelerated argon ion (Ar+) beam. As a result, each nanosecond laser pulse locally modifies the initial metal film through initiation of fast melting and subsequent hydrodynamic processes, while the following Ar+-ion polishing removes the rest of the film, revealing the hidden topography features and fabricating separate plasmonic structures on the glass substrate. We demonstrate that the shape and lateral size of the resulting functional plasmonic nanostructures depend on the laser pulse energy and metal film thickness, while subsequent Ar+-ion polishing enables to vary height of the resulting nanostructures. Plasmonic properties of the fabricated nanostructures were characterized by dark-field micro-spectroscopy, Raman and photoluminescence measurements performed on single nanofeatures, as well as by supporting numerical calculations of the related electromagnetic near-fields and Purcell factors. The developed simple two-stage technique represents a new step towards direct large-scale laser-induced fabrication of highly ordered arrays of complex plasmonic nanostructures.

  20. The growth of III-V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    This paper reports the growth of InGaN/GaN/AlN epitaxial layer on Si(1 1 1) substrate by utilizing plasma-assisted molecular beam epitaxy (PA-MBE) system. The as-grown film was characterized using high-resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). High work function metals, iridium and gold were deposited on the film as metal contacts and their electrical characteristics at pre- and post-annealing were studied. The structural quality of this film is comparative to the values reported in the literature, and the indium molar fraction is 0.57 by employing Vegard's law. The relatively low yellow band emission signifies the grown film is of high quality. For metal contact studies it was found that the post-annealed sample for 5 min shows good conductivity as compared to the other samples.

  1. Texture-Induced Anisotropy in an Inconel 718 Alloy Deposited Using Electron Beam Freeform Fabrication

    Science.gov (United States)

    Tayon, W.; Shenoy, R.; Bird, R.; Hafley, R.; Redding, M.

    2014-01-01

    A test block of Inconel (IN) 718 was fabricated using electron beam freeform fabrication (EBF(sup 3)) to examine how the EBF(sup 3) deposition process affects the microstructure, crystallographic texture, and mechanical properties of IN 718. Tests revealed significant anisotropy in the elastic modulus for the as-deposited IN 718. Subsequent tests were conducted on specimens subjected to a heat treatment designed to decrease the level of anisotropy. Electron backscatter diffraction (EBSD) was used to characterize crystallographic texture in the as-deposited and heat treated conditions. The anisotropy in the as-deposited condition was strongly affected by texture as evidenced by its dependence on orientation relative to the deposition direction. Heat treatment resulted in a significant improvement in modulus of the EBF(sup 3) product to a level nearly equivalent to that for wrought IN 718 with reduced anisotropy; reduction in texture through recrystallization; and production of a more homogeneous microstructure.

  2. Interfacial electrical properties of ion-beam sputter deposited amorphous carbon on silicon

    Science.gov (United States)

    Khan, A. A.; Woollam, J. A.; Chung, Y.; Banks, B.

    1983-01-01

    Amorphous, 'diamond-like' carbon films have been deposited on Si substrates, using ion-beam sputtering. The interfacial properties are studied using capacitance and conductance measurements. Data are analyzed using existing theories for interfacial electrical properties. The density of electronic states at the interface, along with corresponding time constants are determined.

  3. Research of photon beam dose deposition kernel based on Monte Carlo method

    International Nuclear Information System (INIS)

    Using Monte Carlo program BEAMnrc to simulate Siemens accelerator 6 MV photon beam, using BEAMdp program to analyse the energy spectrum distribution and mean energy from phase space data of different field sizes, then building beam source, energy spectrum and mono-energy source, to use DOSXYZnrc program to calculate the dose deposition kernels at dmax in standard water phantom with different beam sources and make comparison with different dose deposition kernels. The results show that the dose difference using energy spectrum source is small, the maximum percentage dose discrepancy is 1.47%, but it is large using mono-energy source, which is 6.28%. The maximum dose difference for the kernels derived from energy spectrum source and mono-energy source of the same field is larger than 9%, up to 13.2%. Thus, dose deposition has dependence on photon energy, it can lead to larger errors only using mono-energy source because of the beam spectrum distribution of accelerator. A good method to calculate dose more accurately is to use deposition kernel of energy spectrum source. (authors)

  4. Coating of pellet pressing tool with 12C by ion beam deposition

    International Nuclear Information System (INIS)

    The pressing tools, used in the preparation of the samples needed for example for such nuclear elemental analysis methods as PIXE, PIGE and RBS, have been coated with a diamond-type 12C-layer by ion beam deposition. Using carbon-coated pressing tools prepared in this way contamination of the sample surfaces during the pill pressing operation is avoided. (orig.)

  5. Laser-assisted chemical liquid-phase deposition of metals for micro- and optoelectronics

    OpenAIRE

    Kordás, K. (Krisztián)

    2002-01-01

    Abstract The demands toward the development of simple and cost-effective fabrication methods of metallic structures with high lateral resolution on different substrates - applied in many fields of technology, such as in microelectronics, optoelectronics, micromechanics as well as in sensor and actuator applications - gave the idea to perform this research. Due to its simplicity, laser-assisted chemical liquid-phase deposition (LCLD) has been investigated and applied for the metallization o...

  6. Suspended nanostructures grown by electron beam-induced deposition of Pt and TEOS precursors

    International Nuclear Information System (INIS)

    Suspended nanostructures (SNSs) are grown by electron beam-induced deposition (EBID) of Pt and tetra-ethyl-ortho-silicate (TEOS) gas precursors on nanopillar tips, by lateral shifting of a scanning electron microscope beam. Shape evolution of SNSs is characterized as a function of electron energy (5, 10, 15 keV) and electron charge deposited per unit length (CDL, 1-9 pC nm-1 range) along the beam track. Pt SNSs grow as single nanowires, evolving from thin (15-20 nm) and horizontal to thick (up to 70 nm) and inclined (up to 600) geometry as CDL increases. TEOS SNSs consist of multiple nanowires arranged in a stack: horizontal and parallel along the beam shift direction and aligned on top of each other along the beam incidence axis. As the CDL increases, the number of nanowires increases and the top edge of the stack progressively inclines, taking the form of a hand-fan. Deposition yield and overall size of SNSs are found to be proportional to CDL and inversely proportional to electron energy for both Pt and TEOS precursors. As an example of 3D nanoarchitectures achievable by this lateral EBID approach, a 'nano-windmill' TEOS structure is presented

  7. Characterization of diamond thin films deposited by a CO2 laser-assisted combustion-flame method

    International Nuclear Information System (INIS)

    Diamond thin films were deposited by a CO2 laser-assisted O2/C2H2/C2H4 combustion-flame process. The effect of the deposition parameters, in particular the laser wavelength and power, on the film surface morphology, microstructure and phases present was the primary focus of the work. The laser power was set at 100, 400 and 800 W while the wavelength was varied and set at 10.591 μm in the untuned condition and set at 10.532 μm to resonantly match the CH2-wagging vibrational mode of the C2H4 molecule when in the tuned condition. When the laser was coupled to the combustion flame during deposition the diamond film growth was enhanced as the lateral grain size increased from 1 μm to greater than 5 μm. The greatest increase in grain size occurred when the wavelength was in the tuned condition. Scanning transmission electron microscopy images from focused-ion beam cross-sectioned samples revealed a sub-layer of smaller grains less than 1 μm in size near the substrate surface at the lower laser powers and untuned wavelength. X-ray diffraction results showed a more intense Diamond (111) peak as the laser power increased from 100 to 800 W for the films deposited with the tuned laser wavelength. Micro-Raman spectra showed a diamond peak nearly twice as intense from the films with the tuned laser wavelength.

  8. Bessel beams in tunable acoustic gradient index lenses and optical trap assisted nanolithography

    Science.gov (United States)

    McLeod, Euan

    2009-12-01

    Bessel beams are laser beams whose shape gives them nondiffracting and self-healing properties. They find use in applications requiring a narrow laser beam with a high depth of field. The first part of this thesis presents the study of a new adaptive optical element capable of generating rapidly tunable Bessel beams: the tunable acoustic gradient index (TAG) lens. This device uses piezoelectrically-generated acoustic waves to modulate a fluid's density and refractive index, leading to electrically controllable lensing behavior. Both modeling and experiment are used to explain the observed multiscale Bessel beams. Because the TAG lens operates at frequencies of hundreds of kilohertz, the effective Bessel beam cone angle continuously varies at timescales on the order of microseconds or smaller-orders of magnitude faster than other existing technologies. In addition, the TAG lens may be driven with a Fourier superposition of multiple frequencies, which could enable the generation of arbitrary patterns. The second part of this thesis presents the application of Bessel beams in a new probe-based direct-write optical nanolithography method called optical trap assisted nanolithography (OTAN). When compared to alternative techniques, OTAN makes probe placement and parallelization easier. The method uses Bessel beam optical tweezers to trap dielectric microspheres in close proximity to a surface. These microspheres are then illuminated with pulses from a second laser beam, whose fluence is enhanced directly below the microsphere by focusing and near-field effects to a level great enough to modify the substrate. This technique is used to produce 100 nm features, which are less than lambda/3, and whose sizes agree well with finite-difference time-domain models of the experiment. A demonstration is given of how the technique can be parallelized by trapping multiple microspheres with multiple beams and exposing all spheres in unison with a single pulsed beam. Finally, modeling

  9. Aerosol assisted chemical vapor deposition using nanoparticle precursors: a route to nanocomposite thin films.

    Science.gov (United States)

    Palgrave, Robert G; Parkin, Ivan P

    2006-02-01

    Gold nanoparticle and gold/semiconductor nanocomposite thin films have been deposited using aerosol assisted chemical vapor deposition (CVD). A preformed gold colloid in toluene was used as a precursor to deposit gold films onto silica glass. These nanoparticle films showed the characteristic plasmon absorption of Au nanoparticles at 537 nm, and scanning electron microscopic (SEM) imaging confirmed the presence of individual gold particles. Nanocomposite films were deposited from the colloid concurrently with conventional CVD precursors. A film of gold particles in a host tungsten oxide matrix resulted from co-deposition with [W(OPh)(6)], while gold particles in a host titania matrix resulted from co-deposition with [Ti(O(i)Pr)(4)]. The density of Au nanoparticles within the film could be varied by changing the Au colloid concentration in the original precursor solution. Titania/gold composite films were intensely colored and showed dichromism: blue in transmitted light and red in reflected light. They showed metal-like reflection spectra and plasmon absorption. X-ray photoelectron spectroscopy and energy-dispersive X-ray analysis confirmed the presence of metallic gold, and SEM imaging showed individual Au nanoparticles embedded in the films. X-ray diffraction detected crystalline gold in the composite films. This CVD technique can be readily extended to produce other nanocomposite films by varying the colloids and precursors used, and it offers a rapid, convenient route to nanoparticle and nanocomposite thin films. PMID:16448130

  10. Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

    Science.gov (United States)

    Hepp, Aloysius F.; McNatt, Jeremiah; Dickman, John E.; Jin, Michael H.-C.; Banger, Kulbinder K.; Kelly, Christopher V.; AquinoGonzalez, Angel R.; Rockett, Angus A.

    2006-01-01

    Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395 C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45, 1.43, 1.37, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03 percent.

  11. Radio-frequency assisted pulsed laser deposition of nanostructured WOx films

    International Nuclear Information System (INIS)

    The synthesis of tungsten oxide films with large surface area is promising for gas sensing applications. Thin WOx films were obtained by radio-frequency assisted pulsed laser deposition (RF-PLD). A tungsten target was ablated at 700 and 900 Pa in reactive oxygen, or in a 50% mixed oxygen-helium atmosphere at the same total pressure values. Corning glass was used as substrate, at temperatures including 673, 773 and 873 K. Other deposition parameters such as laser fluence (4.5 J cm-2), laser wavelength (355 nm), radiofrequency power (150 W), target to substrate distance (4 cm), laser spot area (0.7 mm2), and number of laser shots (12,000) were kept fixed. The sensitivity on the deposition conditions of morphology, nanostructure, bond coordination, and roughness of the obtained films were analyzed by scanning and transmission electron microscopy, micro-Raman spectroscopy, and atomic force microscopy.

  12. Growth Assisted by Glancing Angle Deposition: A New Technique to Fabricate Highly Porous Anisotropic Thin Films.

    Science.gov (United States)

    Sanchez-Valencia, Juan Ramon; Longtin, Remi; Rossell, Marta D; Gröning, Pierangelo

    2016-04-01

    We report a new methodology based on glancing angle deposition (GLAD) of an organic molecule in combination with perpendicular growth of a second inorganic material. The resulting thin films retain a very well-defined tilted columnar microstructure characteristic of GLAD with the inorganic material embedded inside the columns. We refer to this new methodology as growth assisted by glancing angle deposition or GAGLAD, since the material of interest (here, the inorganic) grows in the form of tilted columns, though it is deposited under a nonglancing configuration. As a "proof of concept", we have used silver and zinc oxide as the perpendicularly deposited material since they usually form ill-defined columnar microstructures at room temperature by GLAD. By means of our GAGLAD methodology, the typical tilted columnar microstructure can be developed for materials that otherwise do not form ordered structures under conventional GLAD. This simple methodology broadens significantly the range of materials where control of the microstructure can be achieved by tuning the geometrical deposition parameters. The two examples presented here, Ag/Alq3 and ZnO/Alq3, have been deposited by physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD), respectively: two different vacuum techniques that illustrate the generality of the proposed technique. The two type of hybrid samples present very interesting properties that demonstrate the potentiality of GAGLAD. On one hand, the Ag/Alq3 samples present highly optical anisotropic properties when they are analyzed with linearly polarized light. To our knowledge, these Ag/Alq3 samples present the highest angular selectivity reported in the visible range. On the other hand, ZnO/Alq3 samples are used to develop highly porous ZnO thin films by using Alq3 as sacrificial material. In this way, antireflective ZnO samples with very low refractive index and extinction coefficient have been obtained. PMID:26954074

  13. Aerosol assisted atmospheric pressure chemical vapor deposition of silicon thin films using liquid cyclic hydrosilanes

    International Nuclear Information System (INIS)

    Silicon (Si) thin films were produced using an aerosol assisted atmospheric pressure chemical vapor deposition technique with liquid hydrosilane precursors cyclopentasilane (CPS, Si5H10) and cyclohexasilane (CHS, Si6H12). Thin films were deposited at temperatures between 300 and 500 °C, with maximum observed deposition rates of 55 and 47 nm/s for CPS and CHS, respectively, at 500 °C. Atomic force microscopic analyses of the films depict smooth surfaces with roughness of 4–8 nm. Raman spectroscopic analysis indicates that the Si films deposited at 300 °C and 350 °C consist of a hydrogenated amorphous Si (a-Si:H) phase while the films deposited at 400, 450, and 500 °C are comprised predominantly of a hydrogenated nanocrystalline Si (nc-Si:H) phase. The wide optical bandgaps of 2–2.28 eV for films deposited at 350–400 °C and 1.7–1.8 eV for those deposited at 450–500 °C support the Raman data and depict a transition from a-Si:H to nc-Si:H. Films deposited at 450 oC possess the highest photosensitivity of 102–103 under AM 1.5G illumination. Based on the growth model developed for other silanes, we suggest a mechanism that governs the film growth using CPS and CHS. - Highlights: • Si films via AA-APCVD are realized using cyclopentasilane (CPS) and cyclohexasilane (CHS). • Low activation energies of CPS and CHS allow Si thin films at low temperatures (300 °C). • High growth rates of 47–55 nm/s were obtained at 500 °C • Near device quality Si thin films with 2–3 orders of photosensitivity • Si thin films via AA-APCVD are amenable to continuous roll-to-roll manufacturing

  14. Effect of focused ion beam deposition induced contamination on the transport properties of nano devices

    International Nuclear Information System (INIS)

    Focused ion beam (FIB) deposition produces unwanted particle contamination beyond the deposition point. This is due to the FIB having a Gaussian distribution. This work investigates the spatial extent of this contamination and its influence on the electrical properties of nano-electronic devices. A correlation study is performed on carbon-nanotube (CNT) devices manufactured using FIB deposition. The devices are observed using transmission electron microscopy (TEM) and these images are correlated with device electrical characteristics. To discover how far Pt-nanoparticle contamination occurs along a CNT after FIB electrical contact deposition careful TEM inspections are performed. The results show FIB deposition efficiently improves electrical contact; however, the practice is accompanied by serious particle contamination near deposition points. These contaminants include metal particles and amorphous elements originating from precursor gases and residual water molecules in the vacuum chamber. Pt-contamination extends for approximately 2 μm from the point of FIB contact deposition. These contaminants cause current fluctuations and alter the transport characteristics of devices. It is recommended that nano-device fabrication occurs at a distance greater than 2 μm from the FIB deposition of an electrical contact. (paper)

  15. Ion-assisted doping of 2-6 compounds during physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bube, R H [Stanford Univ., CA (USA). Dept. of Materials Science and Engineering

    1990-07-01

    This report describes a research program to (1) investigate ion-assisted doping during chemical vapor deposition of CdTe and (2) determine the influence of co-depositing ionized dopant atoms in the growth and structural and photoelectronic properties of the deposited films. In p-CdTe homo-epitaxial films, we controlled doping up to about 6 {times} 10{sup 16} cm{sup {minus}3} and 2 {times} 10{sup 17} cm{sub {minus}3} or ion-assisted depositions with As and P ions, respectively. At a growth rate of approximately 0.1 {mu}m/min, a substrate temperature of 400{degree}C, and ion energy of 60 eV, a maximum doping density was found near an ion current of 0.6{mu}A/cm{sup 2}. Related studies included elucidating the role of low-energy ion damage in the ion-assisted doping process, and investigating the decrease in carrier density near the surface of p-CdTe upon heating in vacuum, H{sub 2}, or Ar. We demonstrate the ability to make carrier density profiles and to grade junctions, and we present preliminary results from polycrystalline p-CdTe films grown on graphite and alumina substrates. We also present solar cells prepared using the p-CdTe as the collector area and n-CdS as the window layer, and we examine their photovoltaic parameters for different carrier densities and configurations in p-CdTe. 91 refs., 44 figs., 5 tabs.

  16. Electron-beam induced deposition and autocatalytic decomposition of Co(CO3NO

    Directory of Open Access Journals (Sweden)

    Florian Vollnhals

    2014-07-01

    Full Text Available The autocatalytic growth of arbitrarily shaped nanostructures fabricated by electron beam-induced deposition (EBID and electron beam-induced surface activation (EBISA is studied for two precursors: iron pentacarbonyl, Fe(CO5, and cobalt tricarbonyl nitrosyl, Co(CO3NO. Different deposits are prepared on silicon nitride membranes and silicon wafers under ultrahigh vacuum conditions, and are studied by scanning electron microscopy (SEM and scanning transmission X-ray microscopy (STXM, including near edge X-ray absorption fine structure (NEXAFS spectroscopy. It has previously been shown that Fe(CO5 decomposes autocatalytically on Fe seed layers (EBID and on certain electron beam-activated surfaces, yielding high purity, polycrystalline Fe nanostructures. In this contribution, we investigate the growth of structures from Co(CO3NO and compare it to results obtained from Fe(CO5. Co(CO3NO exhibits autocatalytic growth on Co-containing seed layers prepared by EBID using the same precursor. The growth yields granular, oxygen-, carbon- and nitrogen-containing deposits. In contrast to Fe(CO5 no decomposition on electron beam-activated surfaces is observed. In addition, we show that the autocatalytic growth of nanostructures from Co(CO3NO can also be initiated by an Fe seed layer, which presents a novel approach to the fabrication of layered nanostructures.

  17. The electron beam deposition of titanium on polyetheretherketone (PEEK) and the resulting enhanced biological properties.

    Science.gov (United States)

    Han, Cheol-Min; Lee, Eun-Jung; Kim, Hyoun-Ee; Koh, Young-Hag; Kim, Keung N; Ha, Yoon; Kuh, Sung-Uk

    2010-05-01

    The surface of polyetheretherketone (PEEK) was coated with a pure titanium (Ti) layer using an electron beam (e-beam) deposition method in order to enhance its biocompatibility and adhesion to bone tissue. The e-beam deposition method was a low-temperature coating process that formed a dense, uniform and well crystallized Ti layer without deteriorating the characteristics of the PEEK implant. The Ti coating layer strongly adhered to the substrate and remarkably enhanced its wettability. The Ti-coated samples were evaluated in terms of their in vitro cellular behaviors and in vivo osteointegration, and the results were compared to a pure PEEK substrate. The level of proliferation of the cells (MC3T3-E1) was measured using a methoxyphenyl tetrazolium salt (MTS) assay and more than doubled after the Ti coating. The differentiation level of cells was measured using the alkaline phosphatase (ALP) assay and also doubled. Furthermore, the in vivo animal tests showed that the Ti-coated PEEK implants had a much higher bone-in-contact (BIC) ratio than the pure PEEK implants. These in vitro and in vivo results suggested that the e-beam deposited Ti coating significantly improved the potential of PEEK for hard tissue applications. PMID:20153890

  18. Selective atomic layer deposition with electron-beam patterned self-assembled monolayers

    International Nuclear Information System (INIS)

    The authors selectively deposited nanolines of titanium oxide (TiO2) through atomic layer deposition (ALD) using an octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) as a nucleation inhibition layer. Electron-beam (e-beam) patterning is used to prepare nanoline patterns in the OTS SAM on SiO2/Si substrates suitable for selective ALD. The authors have investigated the effect of an e-beam dose on the pattern width of the selectively deposited TiO2 lines. A high dose (e.g., 20 nC/cm) causes broadening of the linewidth possibly due to scattering, while a low dose (e.g., 5 nC/cm) results in a low TiO2 deposition rate because of incomplete exposure of the OTS SAMs. The authors have confirmed that sub-30 nm isolated TiO2 lines can be achieved by selective ALD combined with OTS patterned by EBL at an accelerating voltage of 2 kV and line dose of 10 nC/cm. This research offers a new approach for patterned gate dielectric layer fabrication, as well as potential applications for nanosensors and solar cells.

  19. Study of electron-beam-pumped KrF laser kinetics and calculation of energy deposition

    International Nuclear Information System (INIS)

    The program of the electron-beam-pumped KrF laser kinetics has been developed. By using this program the relation of relaxation rate of upper laser level to the optimum output condition of the KrF laser is studied. It is expected that the laser output will be directly proportional to the relaxation rate under a given condition when the laser flux is near saturation. The numerical simulation showed that a rise (or drop) in pump rate is faster than that of the relaxation rate, the laser output rises (or drops) as well. The optimum condition of output is obtained. The pressure (5 ∼ 6 atm*), the pump power and the Ar, Kr, F2 mixture ratio are determined for the optimum condition. In order to study the energy deposition of the electron-beam-pumped KrF gas laser, the SANDYL and the ITS programs have been developed. The latter is the program with the axial magnetic field applied, while the former without any field. The energy depositions of two kinds of Ar/Kr/F2 mixtures at various pressures of the electron-beam-pumped cylindrical KrF laser are calculated with the SANDYL program. The results show that under the same conditions, the energy deposition with the axial magnetic field applied is 3 times larger than that without any magnetic field. The energy depositions of two kinds of Ar/Kr/F2

  20. Fabrication and characterization of graded calcium phosphate coatings produced by ion beam sputtering/mixing deposition

    International Nuclear Information System (INIS)

    Ion beam sputtering/mixing deposition was used to produce thin calcium phosphate coatings on titanium substrate from the hydroxyapatite target. It was found that as-deposited coatings were amorphous. No distinct absorption band of the hydroxyl group was observed in FTIR spectra of the coatings but new absorption bands were present for CO32-, which was brought about during the deposition process. Scanning electron microscopy revealed that the deposited coatings had a uniform and dense structure. The calcium to phosphorous ratio of these coatings varied between 2.0 and 8.0. Analyses of XPS data revealed that the coating could be divided into four distinctive zones, and a graded structure was achieved in the as-received coating. Scratch tests showed that the coatings adhered well to the substrate

  1. Angular distribution of species in pulsed energy beam deposition of oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Nistor, M., E-mail: mnistor@infim.ro [National Institute for Lasers, Plasmas and Radiation Physics, L22 P.O. Box MG-36, 77125 Bucharest-Magurele (Romania); Gherendi, F.; Mandache, N.B. [National Institute for Lasers, Plasmas and Radiation Physics, L22 P.O. Box MG-36, 77125 Bucharest-Magurele (Romania)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Thickness profiles of Ba{sub x}Sr{sub 1-x}TiO{sub 3} thin films were measured. Black-Right-Pointing-Pointer Comparison between pulsed laser (PLD) and pulsed electron beam deposition (PED). Black-Right-Pointing-Pointer The film thicknesses profile of PED has a slightly broader shape than that of PLD. Black-Right-Pointing-Pointer The film stoichiometry is preserved at all angles. - Abstract: Pulsed energy beam deposition methods like pulsed-laser deposition (PLD) or pulsed-electron beam deposition (PED) allow the formation of smooth, dense and crystalline oxide thin films. The angular distribution of the ablated flux from the target and the thin film thickness profile were extensively studied for PLD for a wide range of materials and growth conditions. In the case of complex oxide compounds, the angular distribution of the various species emitted by the target will determine the precise composition of the films. In this work we report on the determination of the angular distributions of the species emitted from a Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST) target. A comparison between these results obtained by PED and PLD methods is presented and discussed in the frame of Anisimov's model. A slightly broader shape of the angular distribution for PED than that for PLD is explained taking into account the differences in the spot size and fluence between the pulsed electron beam and laser beam and a small collisional broadening of the angular distribution in the case of PED. The stoichiometry is preserved at all angles.

  2. Ion assisted deposition with low-energy ions for applications in modern optics

    CERN Document Server

    Kennedy, M

    1999-01-01

    realised by a process adaptation with UV-absorbing films. A further focal point are antireflective coatings on alkali halides optics for high-power CO sub 2 -lasers. Ion assisted deposition of NaF-films at extremely low ion energies (E sub i sub o sub n approx 5 eV) qualifies antireflective coatings with minimal absorption (alpha approx 1.5 cm sup - sup 1), high short-pulse damage threshold (50%-LIDT approx 60J/cm sup 2) and improved degradational stability. Main objective of this work is the development of ion assisted deposition processes without additional substrate heating for applications in precision and laser optics. New low-energy ion sources with ion energies below 100 eV were employed for the research work. Starting point of the process development are basic investigations on the ion assisted evaporation of fluoride and oxide thin film materials. The optimisation of the coating processes is primary done with the help of optical characterisation methods (spectral photometry, laser calorimetry, measur...

  3. Deposition of diamond like carbon films by using a single ion gun with varying beam source

    Institute of Scientific and Technical Information of China (English)

    JIANG Jin-qiu; Chen Zhu-ping

    2001-01-01

    Diamond like carbon films have been successfully deposited on the steel substrate, by using a single ion gun with varying beam source. The films may appear blue, yellow and transparent in color, which was found related to contaminants from the sample holder and could be avoided. The thickness of the films ranges from tens up to 200 nanometers, and the hardness is in the range 20 to 30 GPa. Raman analytical results reveal the films are in amorphous structure. The effects of different beam source on the films structure are further discussed.

  4. Site control technique for quantum dots using electron beam induced deposition

    Science.gov (United States)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi

    2014-05-01

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

  5. Functional nickel-based deposits synthesized by focused beam induced processing

    Science.gov (United States)

    Córdoba, R.; Barcones, B.; Roelfsema, E.; Verheijen, M. A.; Mulders, J. J. L.; Trompenaars, P. H. F.; Koopmans, B.

    2016-02-01

    Functional nanostructures fabricated by focused electron/ion beam induced processing (FEBIP/FIBIP) open a promising route for applications in nanoelectronics. Such developments rely on the exploration of new advanced materials. We report here the successful fabrication of nickel-based deposits by FEBIP/FIBIP using bis(methyl cyclopentadienyl)nickel as a precursor. In particular, binary compounds such as nickel oxide (NiO) are synthesized by using an in situ two-step process at room temperature. By this method, as-grown Ni deposits transform into homogeneous NiO deposits using focused electron beam irradiation under O2 flux. This procedure is effective in producing highly pure NiO deposits with resistivity of 2000 Ωcm and a polycrystalline structure with face-centred cubic lattice and grains of 5 nm. We demonstrate that systems based on NiO deposits displaying resistance switching and an exchange-bias effect could be grown by FEBIP using optimized parameters. Our results provide a breakthrough towards using these techniques for the fabrication of functional nanodevices.

  6. Growth of textured MgO through e-beam evaporation and inclined substrate deposition

    International Nuclear Information System (INIS)

    Long length textured MgO template on Hastelloy C276(TM) (HC) has been successfully deposited in a reel-to-reel (R2R) electron beam (e-beam) evaporation system by inclined substrate deposition (ISD). High deposition rate up to 10 nm s-1 with exposure length of 7 cm has been realized. The MgO template showed good in-plane texture of 9.5 deg. -11.5 deg. measured from the (002) phi scans. Experimental results reveal that MgO in-plane texture is formed by the preferred growth direction of [11n] parallel substrate normal and one of the MgO {200} planes rotates to the in-flux direction. A new expression, termed the 'two-thirds relationship', between the inclination angle α and the tilted angle of the (00l) plane from the substrate normal, β, has been summarized. YBa2Cu3O7-δ (YBCO) film deposited by pulsed laser deposition (PLD) on strontium ruthenate (SRO) buffered ISD MgO showed Tc of 91 K with transition width of 1 K. Critical current measurement indicated an Ic of 110 A cm-1 at 77 K in self-field for 0.68 μm YBCO film, corresponding to a Jc of 1.6 MA cm-2

  7. Growth of textured MgO through e-beam evaporation and inclined substrate deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Y [Materials Research Lab, UES Inc. Dayton, OH 45432 (United States); Lei, C H [Department of MSE, University of Illinois, Urbana, IL 61801 (United States); Ma, B [Argonne National Laboratory, Argonne, IL 60439 (United States); Evans, H [Materials Research Lab, UES Inc. Dayton, OH 45432 (United States); Efstathiadis, H [Albany Nanotech, Albany, NY 12203 (United States); Manisha, R [Albany Nanotech, Albany, NY 12203 (United States); Massey, M [Materials Research Lab, UES Inc. Dayton, OH 45432 (United States); Balachandran, U [Argonne National Laboratory, Argonne, IL 60439 (United States); Bhattacharya, R [Materials Research Lab, UES Inc. Dayton, OH 45432 (United States)

    2006-08-15

    Long length textured MgO template on Hastelloy C276(TM) (HC) has been successfully deposited in a reel-to-reel (R2R) electron beam (e-beam) evaporation system by inclined substrate deposition (ISD). High deposition rate up to 10 nm s{sup -1} with exposure length of 7 cm has been realized. The MgO template showed good in-plane texture of 9.5 deg. -11.5 deg. measured from the (002) phi scans. Experimental results reveal that MgO in-plane texture is formed by the preferred growth direction of [11n] parallel substrate normal and one of the MgO {l_brace}200{r_brace} planes rotates to the in-flux direction. A new expression, termed the 'two-thirds relationship', between the inclination angle {alpha} and the tilted angle of the (00l) plane from the substrate normal, {beta}, has been summarized. YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) film deposited by pulsed laser deposition (PLD) on strontium ruthenate (SRO) buffered ISD MgO showed T{sub c} of 91 K with transition width of 1 K. Critical current measurement indicated an I{sub c} of 110 A cm{sup -1} at 77 K in self-field for 0.68 {mu}m YBCO film, corresponding to a J{sub c} of 1.6 MA cm{sup -2}.

  8. Growth of textured MgO through e-beam evaporation and inclined substrate deposition

    Science.gov (United States)

    Xu, Y.; Lei, C. H.; Ma, B.; Evans, H.; Efstathiadis, H.; Manisha, R.; Massey, M.; Balachandran, U.; Bhattacharya, R.

    2006-08-01

    Long length textured MgO template on Hastelloy C276™ (HC) has been successfully deposited in a reel-to-reel (R2R) electron beam (e-beam) evaporation system by inclined substrate deposition (ISD). High deposition rate up to 10 nm s-1 with exposure length of 7 cm has been realized. The MgO template showed good in-plane texture of 9.5°-11.5° measured from the (002) phi scans. Experimental results reveal that MgO in-plane texture is formed by the preferred growth direction of [11n]\\parallel \\mathrm {substrate} normal and one of the MgO {200} planes rotates to the in-flux direction. A new expression, termed the 'two-thirds relationship', between the inclination angle α and the tilted angle of the (00l) plane from the substrate normal, β, has been summarized. YBa2Cu3O7-δ (YBCO) film deposited by pulsed laser deposition (PLD) on strontium ruthenate (SRO) buffered ISD MgO showed Tc of 91 K with transition width of 1 K. Critical current measurement indicated an Ic of 110 A cm-1 at 77 K in self-field for 0.68 µm YBCO film, corresponding to a Jc of 1.6 MA cm-2.

  9. Electron beam evaporated LaF3 thin films prepared by different temperatures and deposition rates

    International Nuclear Information System (INIS)

    LaF3 thin films were prepared by electron beam evaporation with different temperatures and deposition rates. Microstructure properties including crystalline structure and surface roughness were investigated by X-ray diffraction (XRD) and optical profilograph. X-ray photoelectron spectroscopy (XPS) was employed to study the chemical composition of the films. Optical properties (transmittance and refractive index) and laser induce damage threshold (LIDT) at 355 nm of the films were also characterized. The effects of deposition rate and substrate temperature on microstructure, optical properties and LIDT of LaF3 thin films were discussed, respectively.

  10. Adherence of ion beam sputter deposited metal films on H-13 steel

    Science.gov (United States)

    Mirtich, M. J.

    1980-01-01

    An electron bombardment argon ion source was used to sputter deposit 17 different metal and metal oxide films ranging in thickness from 1 to 8 micrometers on H-13 steel substrates. The film adherence to the substrate surface was measured using a tensile test apparatus. Comparisons in bond strength were made between ion beam, ion plating, and RF deposited films. A protective coating to prevent heat checking in H-13 steel dies used for aluminum die casting was studied. The results of exposing the coated substrates to temperatures up to 700 degrees are presented.

  11. Laser assisted decay spectroscopy at the CRIS beam line at ISOLDE

    International Nuclear Information System (INIS)

    A new collinear resonant ionization spectroscopy (CRIS) beam line has recently been installed at ISOLDE, CERN utilising lasers to combine collinear laser spectroscopy and resonant ionization spectroscopy. The combined technique offers the ability to purify an ion beam that is heavily contaminated with radioactive isobars, including the ground state of an isotope from its isomer, allowing sensitive secondary experiments to be performed. A new programme aiming to use the CRIS technique for the separation of nuclear isomeric states for decay spectroscopy will commence in 2011. A decay spectroscopy station, consisting of a rotating wheel implantation system for alpha decay spectroscopy, and three high purity germanium detectors around the implantation site for gamma-ray detection, has been developed for this purpose. This paper will report the current status of the laser assisted decay spectroscopy set-up for the CRIS beam line.

  12. Observation of strong leakage reduction in crystal assisted collimation of the SPS beam

    Directory of Open Access Journals (Sweden)

    W. Scandale

    2015-09-01

    Full Text Available In ideal two-stage collimation systems, the secondary collimator–absorber should have its length sufficient to exclude practically the exit of halo particles with large impact parameters. In the UA9 experiments on the crystal assisted collimation of the SPS beam a 60 cm long tungsten bar is used as a secondary collimator–absorber which is insufficient for the full absorption of the halo protons. Multi-turn simulation studies of the collimation allowed to select the position for the beam loss monitor downstream the collimation area where the contribution of particles deflected by the crystal in channeling regime but emerging from the secondary collimator–absorber is considerably reduced. This allowed observation of a strong leakage reduction of halo protons from the SPS beam collimation area, thereby approaching the case with an ideal absorber.

  13. Observation of strong leakage reduction in crystal assisted collimation of the SPS beam

    International Nuclear Information System (INIS)

    In ideal two-stage collimation systems, the secondary collimator–absorber should have its length sufficient to exclude practically the exit of halo particles with large impact parameters. In the UA9 experiments on the crystal assisted collimation of the SPS beam a 60 cm long tungsten bar is used as a secondary collimator–absorber which is insufficient for the full absorption of the halo protons. Multi-turn simulation studies of the collimation allowed to select the position for the beam loss monitor downstream the collimation area where the contribution of particles deflected by the crystal in channeling regime but emerging from the secondary collimator–absorber is considerably reduced. This allowed observation of a strong leakage reduction of halo protons from the SPS beam collimation area, thereby approaching the case with an ideal absorber

  14. Laser assisted decay spectroscopy at the CRIS beam line at ISOLDE

    International Nuclear Information System (INIS)

    The new collinear resonant ionization spectroscopy (Cris) experiment at Isolde, Cern uses laser radiation to stepwise excite and ionize an atomic beam for the purpose of ultra-sensitive detection of rare isotopes and hyperfine structure measurements. The technique also offers the ability to purify an ion beam that is contaminated with radioactive isobars, including the ground state of an isotope from its isomer. A new program using the Cris technique to select only nuclear isomeric states for decay spectroscopy commenced last year. The isomeric ion beam is selected using a resonance within its hyperfine structure and subsequently deflected to a decay spectroscopy station. This consists of a rotating wheel implantation system for alpha and beta decay spectroscopy, and up to three high purity germanium detectors for gamma-ray detection. This paper gives an introduction to the Cris technique, the current status of the laser assisted decay spectroscopy set-up and recent results from the experiment in November 2011.

  15. Dense CdS thin films on fluorine-doped tin oxide coated glass by high-rate microreactor-assisted solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Su, Yu-Wei, E-mail: suyuweiwayne@gmail.com [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ramprasad, Sudhir [Energy Processes and Materials Division, Pacific Northwest National Laboratory, Corvallis, OR 9730 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Han, Seung-Yeol; Wang, Wei [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ryu, Si-Ok [School of Display and Chemical Engineering, Yeungnam University, 214-1 Dae-dong, Gyeonsan, Gyeongbuk 712-749 (Korea, Republic of); Palo, Daniel R. [Barr Engineering Co., Hibbing, MN 55747 (United States); Paul, Brian K. [School of Mechanical, Industrial and Manufacturing Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Chang, Chih-hung [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States)

    2013-04-01

    Continuous microreactor-assisted solution deposition is demonstrated for the deposition of CdS thin films on fluorine-doped tin oxide (FTO) coated glass. The continuous flow system consists of a microscale T-junction micromixer with the co-axial water circulation heat exchanger to control the reacting chemical flux and optimize the heterogeneous surface reaction. Dense, high quality nanocrystallite CdS thin films were deposited at an average rate of 25.2 nm/min, which is significantly higher than the reported growth rate from typical batch chemical bath deposition process. Focused-ion-beam was used for transmission electron microscopy specimen preparation to characterize the interfacial microstructure of CdS and FTO layers. The band gap was determined at 2.44 eV by UV–vis absorption spectroscopy. X-ray photon spectroscopy shows the binding energies of Cd 3d{sub 3/2}, Cd 3d{sub 5/2}, S 2P{sub 3/2} and S 2P{sub 1/2} at 411.7 eV, 404.8 eV, 162.1 eV and 163.4 eV, respectively. - Highlights: ► CdS films deposited using continuous microreactor-assisted solution deposition (MASD) ► Dense nanocrystallite CdS films can be reached at a rate of 25.2 [nm/min]. ► MASD can approach higher film growth rate than conventional chemical bath deposition.

  16. Ion-beam inertial fusion: the requirements posed by target and deposition physics

    International Nuclear Information System (INIS)

    The demonstration of ICF scientific feasibility requires success in target design, driver development and target fabrication. Since these are interrelated, we present here some results of ion beam target studies and relate them to parameters of interest to ion accelerators. Ion deposition physics have long been a well known subject apart from high beam currents. Recent NRL experiments at up to 250 kA/cm2 ions confirm the classical deposition physics now at current densities which are comparable to most ion targets. On the other hand, GSI data at low current density but 1 to 10 MeV/nucleon are continually being accumulated. They have yet to find anomalous results. Relying on target concepts outlined briefly, we report on the energy gain of ion-driven fusion targets as a function of input energy, ion ranges and focal spot radius. We also comment on some consequences of target gain versus driver and reactor requirements

  17. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    Science.gov (United States)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-05-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar+ ion beam, we cleaned the polymer residue without damaging the graphene network. HfO2 grown by atomic layer deposition on graphene cleaned using an Ar+ ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar+ ion cleaning) showed a non-uniform structure. A graphene-HfO2-metal capacitor fabricated by growing 20-nm thick HfO2 on graphene exhibited a very low leakage current (graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  18. Preparation of ZnO films with variable electric field-assisted atomic layer deposition technique

    International Nuclear Information System (INIS)

    The ZnO films have been prepared by a variable electric field-assisted atomic layer deposition method (ALD). By applying electric fields during the precursor pulses, we can modulate both the crystal orientation and structure of the obtained ZnO films. The ZnO films with c-axis preferred orientation and the least oxygen vacancy defect were obtained when the holder electric polarities were positive and negative during the DEZn and H2O pulse, respectively. It is supported that when electric field was applied in the chamber, the torque may lead to the precursor molecular alignments along the electric field direction, which could affect the film growth process and then influence their structures and properties. This variable electric field-assisted ALD approach would provide an efficient protocol for the growth of semiconductor films with designed properties.

  19. Scalable route to CH3NH3PbI3 perovskite thin films by aerosol assisted chemical vapour deposition

    OpenAIRE

    Bhachu, D. S.; Scanlon, D. O.; Saban, E. J.; Bronstein, H.; Parkin, I. P.; Carmalt, C. J.; Palgrave, R. G.

    2015-01-01

    Methyl-ammonium lead iodide is the archetypal perovskite solar cell material. Phase pure, compositionally uniform methyl-ammonium lead iodide thin films on large glass substrates were deposited using ambient pressure aerosol assisted chemical vapour deposition. This opens up a route to efficient scale up of hybrid perovskite film growth towards industrial deployment.

  20. Ion beam deposition of amorphous carbon films with diamond like properties

    Science.gov (United States)

    Angus, John C.; Mirtich, Michael J.; Wintucky, Edwin G.

    1982-01-01

    Carbon films were deposited on silicon, quartz, and potassium bromide substrates from an ion beam. Growth rates were approximately 0.3 micron/hour. The films were featureless and amorphous and contained only carbon and hydrogen in significant amounts. The density and carbon/hydrogen ratio indicate the film is a hydrogen deficient polymer. One possible structure, consistent with the data, is a random network of methylene linkages and tetrahedrally coordinated carbon atoms.

  1. Biomolecular papain thin films grown by matrix assisted and conventional pulsed laser deposition: A comparative study

    Science.gov (United States)

    György, E.; Pérez del Pino, A.; Sauthier, G.; Figueras, A.

    2009-12-01

    Biomolecular papain thin films were grown both by matrix assisted pulsed laser evaporation (MAPLE) and conventional pulsed laser deposition (PLD) techniques with the aid of an UV KrF∗ (λ =248 nm, τFWHM≅20 ns) excimer laser source. For the MAPLE experiments the targets submitted to laser radiation consisted on frozen composites obtained by dissolving the biomaterial powder in distilled water at 10 wt % concentration. Conventional pressed biomaterial powder targets were used in the PLD experiments. The surface morphology of the obtained thin films was studied by atomic force microscopy and their structure and composition were investigated by Fourier transform infrared spectroscopy. The possible physical mechanisms implied in the ablation processes of the two techniques, under comparable experimental conditions were identified. The results showed that the growth mode, surface morphology as well as structure of the deposited biomaterial thin films are determined both by the incident laser fluence value as well as target preparation procedure.

  2. Continuous Microreactor-Assisted Solution Deposition for Scalable Production of CdS Films

    Energy Technology Data Exchange (ETDEWEB)

    Ramprasad, Sudhir; Su, Yu-Wei; Chang, Chih-Hung; Paul, Brian; Palo, Daniel R.

    2013-06-13

    Solution deposition offers an attractive, low temperature option in the cost effective production of thin film solar cells. Continuous microreactor-assisted solution deposition (MASD) was used to produce nanocrystalline cadmium sulfide (CdS) films on fluorine doped tin oxide (FTO) coated glass substrates with excellent uniformity. We report a novel liquid coating technique using a ceramic rod to efficiently and uniformly apply reactive solution to large substrates (152 mm × 152 mm). This technique represents an inexpensive approach to utilize the MASD on the substrate for uniform growth of CdS films. Nano-crystalline CdS films have been produced from liquid phase at ~90°C, with average thicknesses of 70 nm to 230 nm and with a 5 to 12% thickness variation. The CdS films produced were characterized by UV-Vis spectroscopy, transmission electron microscopy, and X-Ray diffraction to demonstrate their suitability to thin-film solar technology.

  3. Electrochemically assisted deposition of strontium modified magnesium phosphate on titanium surfaces.

    Science.gov (United States)

    Meininger, M; Wolf-Brandstetter, C; Zerweck, J; Wenninger, F; Gbureck, U; Groll, J; Moseke, C

    2016-10-01

    Electrochemically assisted deposition was utilized to produce ceramic coatings on the basis of magnesium ammonium phosphate (struvite) on corundum-blasted titanium surfaces. By the addition of defined concentrations of strontium nitrate to the coating electrolyte Sr(2+) ions were successfully incorporated into the struvite matrix. By variation of deposition parameters it was possible to fabricate coatings with different kinetics of Sr(2+) into physiological media, whereas the release of therapeutically relevant strontium doses could be sustained over several weeks. Morphological and crystallographic examinations of the immersed coatings revealed that the degradation of struvite and the release of Sr(2+) ions were accompanied by a transformation of the coating to a calcium phosphate based phase similar to low-crystalline hydroxyapatite. These findings showed that strontium doped struvite coatings may provide a promising degradable coating system for the local application of strontium or other biologically active metal ions in the implant-bone interface. PMID:27287100

  4. Electron behaviour in CH4/H2 gas mixture in electron-assisted chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Dong Li-Fang; Ma Bo-Qin; Wang Zhi-Jun

    2004-01-01

    The behaviour of electrons in CH4/H2 gas mixture in electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron drift velocity in gas mixture is obtained over a wide range of E/P (the ratio of the electric field to gas pressure) from 1500 to 300000 (V/m kPa-1). The electron energy distribution and average energy under different gas pressure (0.1-20kPa) and CH4 concentration (0.5%-10.0%) are calculated. Their effects on the diamond growth are also discussed. It is believed that these results will be helpful to the selection of optimum experimental conditions for high quality diamond film deposition.

  5. Oscillatory barrier-assisted Langmuir-Blodgett deposition of large-scale quantum dot monolayers

    Science.gov (United States)

    Xu, Shicheng; Dadlani, Anup L.; Acharya, Shinjita; Schindler, Peter; Prinz, Fritz B.

    2016-03-01

    Depositing continuous, large-scale quantum dot films with low pinhole density is an inevitable but nontrivial step for studying their properties for applications in catalysis, electronic devices, and optoelectronics. This rising interest in high-quality quantum dot films has provided research impetus to improve the deposition technique. We show that by incorporating oscillatory barriers in the commonly used Langmuir-Blodgett method, large-scale monolayers of quantum dots with full coverage up to several millimeters have been achieved. With assistance of perturbation provided by the oscillatory barriers, the film has been shown to relax towards thermal equilibrium, and this physical process has been supported by molecular dynamics simulation. In addition, time evolution of dilatational moduli has been shown to give a clear indication of the film morphology and its stability.

  6. Functionalized porphyrin conjugate thin films deposited by matrix assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Iordache, S. [University of Bucharest, 3Nano-SAE Research Center, PO Box MG-38, Bucharest-Magurele (Romania); Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Popescu, A.C.; Popescu, C.E.; Dorcioman, G.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Ciucu, A.A. [University of Bucharest, Faculty of Chemistry, Bucharest (Romania); Balan, A.; Stamatin, I. [University of Bucharest, 3Nano-SAE Research Center, PO Box MG-38, Bucharest-Magurele (Romania); Fagadar-Cosma, E. [Institute of Chemistry Timisoara of Romanian Academy, M. Viteazul Ave. 24, 300223-Timisoara (Romania); Chrisey, D.B. [Tulane University, Departments of Physics and Biomedical Engineering, New Orleans, LA 70118 (United States)

    2013-08-01

    We report on the deposition of nanostructured porphyrin-base, 5(4-carboxyphenyl)-10,15,20-tris(4-phenoxyphenyl)-porphyrin thin films by matrix assisted pulsed laser evaporation onto silicon substrates with screen-printed electrodes. AFM investigations have shown that at 400 mJ/cm{sup 2} fluence a topographical transition takes place from the platelet-like stacking porphyrin-based nanostructures in a perpendicular arrangement to a quasi-parallel one both relative to the substrate surface. Raman spectroscopy has shown that the chemical structure of the deposited thin films is preserved for fluences within the range of 200–300 mJ/cm{sup 2}. Cyclic voltammograms have demonstrated that the free porphyrin is appropriate as a single mediator for glucose in a specific case of screen-printed electrodes, suggesting potential for designing a new class of biosensors.

  7. Metal oxide targets produced by the polymer-assisted deposition method

    International Nuclear Information System (INIS)

    The polymer-assisted deposition (PAD) method was used to create crack-free homogenous metal oxide films for use as targets in nuclear science applications. Metal oxide films of europium, thulium, and hafnium were prepared as models for actinide oxides. Films produced by a single application of PAD were homogenous and uniform and ranged in thickness from 30 to 320 nm. Reapplication of the PAD method (six times) with a 10% by weight hafnium(IV) solution resulted in an equally homogeneous and uniform film with a total thickness of 600 nm.

  8. Metal oxide targets produced by the polymer-assisted deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, Mitch A., E-mail: mitch@berkeley.ed [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Ali, Mazhar N.; Chang, Noel N.; Parsons-Moss, T. [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Ashby, Paul D. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Gates, Jacklyn M. [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Stavsetra, Liv [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Gregorich, Kenneth E.; Nitsche, Heino [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2010-02-11

    The polymer-assisted deposition (PAD) method was used to create crack-free homogenous metal oxide films for use as targets in nuclear science applications. Metal oxide films of europium, thulium, and hafnium were prepared as models for actinide oxides. Films produced by a single application of PAD were homogenous and uniform and ranged in thickness from 30 to 320 nm. Reapplication of the PAD method (six times) with a 10% by weight hafnium(IV) solution resulted in an equally homogeneous and uniform film with a total thickness of 600 nm.

  9. The Energy Deposition for No-air-gap Design of the TESLA Beam Dump

    International Nuclear Information System (INIS)

    In the linear electron- positron collider project TESLA, the beam dump designed as a water tank is working in a very special regime. Each pulse of the electron or positron beam should, after crossing the interaction region, be dumped in a cylindrical 10-m long water dump. The mean power to be absorbed is important being 8 MW for 250 GeV beam energy (intensity 2.04 * 1014 electrons/s) and for 400 GeV case it will be 12 MW and 2.8*1014 electrons/s. The initial project was providing a 20-cm wide air gap between the titanium vessel containing water and the concentrate outer shield. Energy deposition calculations using FLUKA code showed that the energy deposited in and thus temperature rise of the concrete shield were very high. Additional solid inner shield made of aluminium (or iron) has to be placed just behind the titanium vessel. The important production of radioactive nuclei in the air has prompted the designers to minimize the air gap. Realistically, this minimal size of the air gap was assessed to be a 2-cm wide. Also new thickness of the inner shield has been proposed - 60 cm for aluminium and 20 cm for iron. These changes called for a new set of calculations for energy deposition in both the concentrate and aluminum iron) shields. (author)

  10. Ion beam deposition and surface characterization of thin multi-component oxide films during growth.

    Energy Technology Data Exchange (ETDEWEB)

    Krauss, A.R.; Im, J.; Smentkowski, V.; Schultz, J.A.; Auciello, O.; Gruen, D.M.; Holocek, J.; Chang, R.P.H.

    1998-01-13

    Ion beam deposition of either elemental targets in a chemically active gas such as oxygen or nitrogen, or of the appropriate oxide or nitride target, usually with an additional amount of ambient oxygen or nitrogen present, is an effective means of depositing high quality oxide and nitride films. However, there are a number of phenomena which can occur, especially during the production of multicomponent films such as the ferroelectric perovskites or high temperature superconducting oxides, which make it desirable to monitor the composition and structure of the growing film in situ. These phenomena include thermodynamic (Gibbsian), and oxidation or nitridation-driven segregation, enhanced oxidation or nitridation through production of a highly reactive gas phase species such as atomic oxygen or ozone via interaction of the ion beam with the target, and changes in the film composition due to preferential sputtering of the substrate via primary ion backscattering and secondary sputtering of the film. Ion beam deposition provides a relatively low background pressure of the sputtering gas, but the ambient oxygen or nitrogen required to produce the desired phase, along with the gas burden produced by the ion source, result in a background pressure which is too high by several orders of magnitude to perform in situ surface analysis by conventional means. Similarly, diamond is normally grown in the presence of a hydrogen atmosphere to inhibit the formation of the graphitic phase.

  11. Gas phase chemistry during electron assisted chemical vapor deposition (EACVD) of diamond films

    International Nuclear Information System (INIS)

    Diamond films were deposited in electron assisted chemical vapor deposition (EACVD) reactor using two source mixtures of CH4-H2 and C2H5OH-H2, respectively. The plasma gas composition during diamond growing was investigated in situ using optical emission spectroscopy (OES). In two cases of C2H2OH-H2 and CH4-H2 plasma, it was shown that CH and CH+ were all important precursor species in the diamond deposition reaction while the yields of poor diamond films corresponded to the presence of the C2 emission line. The difference between these two cases was that some oxygen-containing species (CH2O, CHO and O2) were detected in the C2H5OH-H2 plasma. The presence of these products may maintain the quality of the deposited diamond films while increasing carbon source concentration, and the growth rate was thus enhanced. These results imply that the increase in the growth rate of diamond film using C2H5OH-H2 mixture is primarily due to a change in gas phase environment

  12. High fluence deposition of polyethylene glycol films at 1064 nm by matrix assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Purice, Andreea; Schou, Jørgen; Kingshott, P.; Pryds, Nini; Dinescu, M.

    2007-01-01

    microbalance. The laser fluence needed to produce PEG films turned out to be unexpectedly high with a threshold of 9 J/cm(2) and the deposition rate was much lower than that with laser light at 355 nm. Results from matrix assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI......Matrix assisted pulsed laser evaporation (MAPLE) has been applied for deposition of thin polyethylene glycol (PEG) films with infrared laser light at 1064 nm. We have irradiated frozen targets (of 1 wt.% PEG dissolved in water) and measured the deposition rate in situ with a quartz crystal 2...

  13. Relativistic electron beam energy deposition in thin gold and aluminum targets

    International Nuclear Information System (INIS)

    Relativistic electron beam (REB) energy deposition in thin gold and aluminum targets has been investigated experimentally using radiation temperature measurements in the soft x-ray, vacuum ultraviolet (XUV) and optical spectral regions on two different particle accelerators. Energy deposition measurements were compared with numerical calculations utilizing particle-in-cell (PIC) diode codes, condensed history Monte-Carlo codes, and coupled radiation-hydrodynamic codes. The specific power deposited (i.e., power deposited/unit mass) was observed to be greater than that due to an average electron making a single pass through a thin target (6.4 μm thick gold foil on the Hydra accelerator and 38 and 6 μm thick aluminum foils on the Proto I accelerator). Self-magnetic field effects were primarily responsible for deposition enhancement in 6.4 μm gold foils on the Hydra accelerator (ν/γ approx. = 2.5). Reduction of electron scattering with aluminum foils on Proto I where ν/γ approx. = 1 led to deposition enhancement due to both self electric and magnetic fields

  14. Ion beam sputter deposition of TiNi shape memory alloy thin films

    Science.gov (United States)

    Davies, Sam T.; Tsuchiya, Kazuyoshi

    1999-08-01

    The development of functional or smart materials for integration into microsystem is of increasing interest. An example is the shape memory effect exhibited by certain metal alloys which, in principle, can be exploited in the fabrication of micro-scale manipulators or actuators, thereby providing on-chip micromechanical functionality. We have investigated an ion beam sputter deposition process for the growth of TiNi shape memory alloy thin films and demonstrated the required control to produce equiatomic composition, uniform coverage and atomic layer-by-layer growth rates on engineering surfaces. The process uses argon ions at intermediate energy produced by a Kaufman-type ion source to sputter non-alloyed targets of high purity titanium and nickel. Precise measurements of deposition rates allows compositional control during thin film growth. As the sputtering targets and substrates are remote from the discharge plasma, deposition occurs under good vacuum of approximately 10-6 mtorr thus promoting high quality films. Furthermore, the ion beam energetics allow deposition at relatively low substrate temperatures of heat capacity and thermal conductivity as the TiNi shape memory alloy undergoes martensitic to austenitic phase transformations.

  15. Unveiling the optical properties of a metamaterial synthesized by electron-beam-induced deposition.

    Science.gov (United States)

    Woźniak, P; Höflich, K; Brönstrup, G; Banzer, P; Christiansen, S; Leuchs, G

    2016-01-15

    Direct writing using a focused electron beam allows for fabricating truly three-dimensional structures of sub-wavelength dimensions in the visible spectral regime. The resulting sophisticated geometries are perfectly suited for studying light-matter interaction at the nanoscale. Their overall optical response will strongly depend not only on geometry but also on the optical properties of the deposited material. In the case of the typically used metal-organic precursors, the deposits show a substructure of metallic nanocrystals embedded in a carbonaceous matrix. Since gold-containing precursor media are especially interesting for optical applications, we experimentally determine the effective permittivity of such an effective material. Our experiment is based on spectroscopic measurements of planar deposits. The retrieved permittivity shows a systematic dependence on the gold particle density and cannot be sufficiently described using the common Maxwell-Garnett approach for effective medium. PMID:26629782

  16. Unveiling the optical properties of a metamaterial synthesized by electron-beam-induced deposition

    CERN Document Server

    Woźniak, Paweł; Brönstrup, Gerald; Banyer, Peter; Christiansen, Silke; Leuchs, Gerd

    2015-01-01

    The direct writing using a focused electron beam allows for fabricating truly three-dimensional structures of sub-wavelength dimensions in the visible spectral regime. The resulting sophisticated geometries are perfectly suited for studying light-matter interaction at the nanoscale. Their overall optical response will strongly depend not only on geometry but also on the optical properties of the deposited material. In case of the typically used metal-organic precursors, the deposits show a substructure of metallic nanocrystals embedded in a carbonaceous matrix. Since gold-containing precursor media are especially interesting for optical applications, we experimentally determine the effective permittivity of such an effective material. Our experiment is based on spectroscopic measurements of planar deposits. The retrieved permittivity shows a systematic dependence on the gold particle density and cannot be sufficiently described using the common Maxwell-Garnett approach for effective medium.

  17. Processing-structure-property relationships in electron beam physical vapor deposited yttria stabilized zirconia coatings

    International Nuclear Information System (INIS)

    The physical and mechanical properties of yttria stabilized zirconia (YSZ) coatings deposited by the electron beam physical vapor deposition technique have been investigated by varying the key process variables such as vapor incidence angle and sample rotation speed. The tetragonal zirconia coatings formed under varying process conditions employed were found to have widely different surface and cross-sectional morphologies. The porosity, phase composition, planar orientation, hardness, adhesion, and surface residual stresses in the coated specimens were comprehensively evaluated to develop a correlation with the process variables. Under transverse scratch test conditions, the YSZ coatings exhibited two different crack formation modes, depending on the magnitude of residual stress. The influence of processing conditions on the coating deposition rate, column orientation angle, and adhesion strength has been established. Key relationships between porosity, hardness, and adhesion are also presented.

  18. Properties of TiN coatings deposited by the method of condensation with ion bombardment accompanied by high-energy ion beam

    International Nuclear Information System (INIS)

    Vacuum-sputtering adapted commercial facility based coating of stainless steel with titanium nitride followed two procedures: ion bombardment condensation (IBC) and IBC under simultaneous effect of ion beam (IB). The deposition rate was equal to 0.1 μm min-1; the investigated coatings were characterized by 2.5 μm depth. Comparison analysis of features and characteristics of the specimens, as well as, full-scale tests of a coated cutting tool enabled to make conclusions about advantages of application of IB assisted IBC technology in contrast to the reference IBC technology

  19. Advanced thermally assisted surface engineering processes

    CERN Document Server

    Chattopadhyay, Ramnarayan

    2007-01-01

    Preface. Acknowledgements. 1: Wear, Surface Heat and Surface Engineering. 2: Plasma Assisted Thermal Processes. 3: Ion Beam Processes. 4: Electron Beam Processes. 5: Microwave Assisted Surface Modification Processes. 6: Laser Assisted Surface Engineering Processes. 7: Solar Energy for Surface Modifications. 8: Combustion Processes for Surface Modification. 9: Friction Weld Surfacing. 10: Induction Surface Modification Processes. 11: Surfacing by Spark Deposition Processes. 12: Arc Assisted Advanced Surface Engineering Processes. 13: Hot Isostatic Press. 14: Fluid Bed Processes. 15: P

  20. Fabrication and characterization of kesterite Cu2ZnSnS4 thin films deposited by electrostatic spray assisted vapour deposition method

    OpenAIRE

    J.P. Liu; Choy, Kwang-Leong; Placidi, M.; J. López-García; Saucedo, Edgardo; Colombara, Diego; Robert, Erika

    2014-01-01

    Most of the high efficiency kesterite solar cells are fabricated by vacuum or hydrazine-based solution methods which have drawbacks, such as high cost, high toxicity or explosivity. In our contribution, an alternative non-vacuum and environmental friendly deposition technology called electrostatic spray assisted vapour deposition (ESAVD) has been used for the cost-effective growth of Cu2ZnSnS4 (CZTS) thin films with well controlled structure and composition. CZTS films have been characterized...

  1. Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition

    Science.gov (United States)

    Zeng, Qing; Chen, Zhaolong; Zhao, Yun; Wei, Tongbo; Chen, Xiang; Zhang, Yun; Yuan, Guodong; Li, Jinmin

    2016-08-01

    High-quality AlN films were directly grown on graphene/sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The graphene layers were directly grown on sapphire by atmospheric-pressure chemical vapor deposition (APCVD), a low-cost catalyst-free method. We analyzed the influence of the graphene layer on the nucleation of AlN at the initial stage of growth and found that sparse AlN grains on graphene grew and formed a continuous film via lateral coalescence. Graphene-assisted AlN films are smooth and continuous, and the full width at half maximum (FWHM) values for (0002) and (10\\bar{1}2) reflections are 360 and 622.2 arcsec, which are lower than that of the film directly grown on sapphire. The high-resolution TEM images near the AlN/sapphire interface for graphene-assisted AlN films clearly show the presence of graphene, which kept its original morphology after the 1200 °C growth of AlN.

  2. Surfactant-assisted electrochemical deposition of {alpha}-cobalt hydroxide for supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Ting [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Jiang, Hao; Ma, Jan [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Temasek Laboratories, Nanyang Technological University, Singapore 637553 (Singapore)

    2011-01-15

    A N-methylpyrrolidone (NMP) assisted electrochemical deposition route has been developed to realize the synthesis of a dense {alpha}-Co(OH){sub 2} layered structure, which is composed of nanosheets, each with a thickness of 10 nm. The capacitive characteristics of the as-obtained {alpha}-Co(OH){sub 2} are investigated by means of cyclic voltammetry (CV), charge/discharge characterization, and electrochemical impedance spectroscopy (EIS), in 1 M KOH electrolyte. The results indicate that {alpha}-Co(OH){sub 2} prepared in the presence of 20 vol.% NMP has denser and thin layered structure which promotes an increased surface area and a shortened ion diffusion path. The as-prepared {alpha}-Co(OH){sub 2} shows better electrochemical performance with specific capacitance of 651 F g{sup -1} in a potential range of -0.1 to 0.45 V. These findings suggest that the surfactant-assisted electrochemical deposition is a promising process for building densely packed material systems with enhanced properties, for application in supercapacitors. (author)

  3. Surfactant-assisted electrochemical deposition of α-cobalt hydroxide for supercapacitors

    Science.gov (United States)

    Zhao, Ting; Jiang, Hao; Ma, Jan

    A N-methylpyrrolidone (NMP) assisted electrochemical deposition route has been developed to realize the synthesis of a dense α-Co(OH) 2 layered structure, which is composed of nanosheets, each with a thickness of 10 nm. The capacitive characteristics of the as-obtained α-Co(OH) 2 are investigated by means of cyclic voltammetry (CV), charge/discharge characterization, and electrochemical impedance spectroscopy (EIS), in 1 M KOH electrolyte. The results indicate that α-Co(OH) 2 prepared in the presence of 20 vol.% NMP has denser and thin layered structure which promotes an increased surface area and a shortened ion diffusion path. The as-prepared α-Co(OH) 2 shows better electrochemical performance with specific capacitance of 651 F g -1 in a potential range of -0.1 to 0.45 V. These findings suggest that the surfactant-assisted electrochemical deposition is a promising process for building densely packed material systems with enhanced properties, for application in supercapacitors.

  4. Aerosol assisted atmospheric pressure chemical vapor deposition of silicon thin films using liquid cyclic hydrosilanes

    Energy Technology Data Exchange (ETDEWEB)

    Guruvenket, Srinivasan, E-mail: guruvenket.srinivasan@ndsu.edu [Center for Nanoscale Energy Related Materials, 1715 NDSU Research Park Drive N, North Dakota State University, Fargo, ND 58102 (United States); Hoey, Justin M.; Anderson, Kenneth J.; Frohlich, Matthew T.; Sailer, Robert A. [Center for Nanoscale Energy Related Materials, 1715 NDSU Research Park Drive N, North Dakota State University, Fargo, ND 58102 (United States); Boudjouk, Philip [Center for Nanoscale Energy Related Materials, 1715 NDSU Research Park Drive N, North Dakota State University, Fargo, ND 58102 (United States); Department of Chemistry and Biochemistry, Ladd-Dunbar Hall, North Dakota State University, Fargo, ND 58102 (United States)

    2015-08-31

    Silicon (Si) thin films were produced using an aerosol assisted atmospheric pressure chemical vapor deposition technique with liquid hydrosilane precursors cyclopentasilane (CPS, Si{sub 5}H{sub 10}) and cyclohexasilane (CHS, Si{sub 6}H{sub 12}). Thin films were deposited at temperatures between 300 and 500 °C, with maximum observed deposition rates of 55 and 47 nm/s for CPS and CHS, respectively, at 500 °C. Atomic force microscopic analyses of the films depict smooth surfaces with roughness of 4–8 nm. Raman spectroscopic analysis indicates that the Si films deposited at 300 °C and 350 °C consist of a hydrogenated amorphous Si (a-Si:H) phase while the films deposited at 400, 450, and 500 °C are comprised predominantly of a hydrogenated nanocrystalline Si (nc-Si:H) phase. The wide optical bandgaps of 2–2.28 eV for films deposited at 350–400 °C and 1.7–1.8 eV for those deposited at 450–500 °C support the Raman data and depict a transition from a-Si:H to nc-Si:H. Films deposited at 450 {sup o}C possess the highest photosensitivity of 10{sup 2}–10{sup 3} under AM 1.5G illumination. Based on the growth model developed for other silanes, we suggest a mechanism that governs the film growth using CPS and CHS. - Highlights: • Si films via AA-APCVD are realized using cyclopentasilane (CPS) and cyclohexasilane (CHS). • Low activation energies of CPS and CHS allow Si thin films at low temperatures (300 °C). • High growth rates of 47–55 nm/s were obtained at 500 °C • Near device quality Si thin films with 2–3 orders of photosensitivity • Si thin films via AA-APCVD are amenable to continuous roll-to-roll manufacturing.

  5. High temperature stability, interface bonding, and mechanical behavior in (beta)-NiAl and Ni3Al matrix composites with reinforcements modified by ion beam enhanced deposition

    Science.gov (United States)

    Grummon, D. S.

    1993-01-01

    Diffusion-bonded NiAl-Al2O3 and Ni3Al-Al2O3 couples were thermally fatigued at 900 C for 1500 and 3500 cycles. The fiber-matrix interface weakened after 3500 cycles for the Saphikon fibers, while the Altex, PRD-166, and FP fibers showed little, if any, degradation. Diffusion bonding of fibers to Nb matrix is being studied. Coating the fibers slightly increases the tensile strength and has a rule-of-mixtures effect on elastic modulus. Push-out tests on Sumitomo and FP fibers in Ni aluminide matrices were repeated. Al2O3 was evaporated directly from pure oxide rod onto acoustically levitated Si carbide particles, using a down-firing, rod-fed electron beam hearth; superior coatings were subsequently produced using concurrent irradiation with 200-eV argon ion-assist beam. The assist beam produced adherent films with reduced tensile stresses. In diffusion bonding in B-doped Ni3Al matrices subjected to compressive bonding at 40 MPa at 1100 C for 1 hr, the diffusion barriers failed to prevent catastrophic particle-matrix reaction, probably because of inadequate film quality. AlN coatings are currently being experimented with, produced by both reactive evaporation and by N(+)-ion enhanced deposition. A 3-kW rod-fed electron-beam-heated evaporation source has been brought into operation.

  6. High-speed deposition of titanium carbide coatings by laser-assisted metal–organic CVD

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Yansheng [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tu, Rong, E-mail: turong@whut.edu.cn [State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Goto, Takashi [Institute for Materials Research, Tohoku University, Aoba-ku, 2-1-1 Katahira, Sendai 980-8577 (Japan)

    2013-08-01

    Graphical abstract: - Highlights: • A semiconductor laser was first used to prepare wide-area LCVD-TiC{sub x} coatings. • The effect of laser power for the deposition of TiC{sub x} coatings was discussed. • TiC{sub x} coatings showed a columnar cross section and a dense surface texture. • TiC{sub x} coatings had a 1–4 order lower laser density than those of previous reports. • This study gives the possibility of LCVD applying on the preparation of TiC{sub x} coating. - Abstract: A semiconductor laser-assisted chemical vapor deposition (LCVD) of titanium carbide (TiC{sub x}) coatings on Al{sub 2}O{sub 3} substrate using tetrakis (diethylamido) titanium (TDEAT) and C{sub 2}H{sub 2} as source materials were investigated. The influences of laser power (P{sub L}) and pre-heating temperature (T{sub pre}) on the microstructure and deposition rate of TiC{sub x} coatings were examined. Single phase of TiC{sub x} coatings were obtained at P{sub L} = 100–200 W. TiC{sub x} coatings had a cauliflower-like surface and columnar cross section. TiC{sub x} coatings in the present study had the highest R{sub dep} (54 μm/h) at a relative low T{sub dep} than those of conventional CVD-TiC{sub x} coatings. The highest volume deposition rate (V{sub dep}) of TiC{sub x} coatings was about 4.7 × 10{sup −12} m{sup 3} s{sup −1}, which had 3–10{sup 5} times larger deposition area and 1–4 order lower laser density than those of previous LCVD using CO{sub 2}, Nd:YAG and argon ion laser.

  7. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam

    International Nuclear Information System (INIS)

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties. In this work, Pt deposited by FIB is characterized thermally, structurally, and chemically. Its thermal conductivity is found to be substantially lower than the bulk value of Pt, 7.2 W m−1 K−1 versus 71.6 W m−1 K−1 at room temperature. The low thermal conductivity is attributed to the nanostructure of the material and its chemical composition. Pt deposited by FIB is shown, via aberration corrected TEM, to be a segregated mix of nanocrystalline Pt and amorphous C with Ga and O impurities. Ga impurities mainly reside in the Pt while O is homogeneously distributed throughout. The Ga impurity, small grain size of the Pt, and the amorphous carbon between grains are the cause for the low thermal conductivity of this material. Since Pt deposited by FIB is a common material for affixing samples, this information can be used to assess systematic errors in thermal characterization of different nanosamples. This application is also demonstrated by thermal characterization of two carbon nanofibers and a correction using the reported thermal properties of the Pt deposited by FIB. (paper)

  8. Spatial chemistry evolution during focused electron beam-induced deposition: origins and workarounds

    International Nuclear Information System (INIS)

    The successful application of functional nanostructures, fabricated via focused electron-beam-induced deposition (FEBID), is known to depend crucially on its chemistry as FEBID tends to strong incorporation of carbon. Hence, it is essential to understand the underlying mechanisms which finally determine the elemental composition after fabrication. In this study we focus on these processes from a fundamental point of view by means of (1) varying electron emission on the deposit surface; and (2) changing replenishment mechanism, both driven by the growing deposit itself. First, we revisit previous results concerning chemical variations in nanopillars (with a quasi-1D footprint) depending on the process parameters. In a second step we expand the investigations to deposits with a 3D footprint which are more relevant in the context of applications. Then, we demonstrate how technical setups and directional gas fluxes influence final chemistries. Finally, we put the findings in a bigger context with respect to functionalities which demonstrates the crucial importance of carefully set up fabrication processes to achieve controllable, predictable and reproducible chemistries for FEBID deposits as a key element for industrially oriented applications. (orig.)

  9. Electrochemical impedance spectroscopy on nanostructured carbon electrodes grown by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bettini, Luca Giacomo; Bardizza, Giorgio; Podesta, Alessandro; Milani, Paolo; Piseri, Paolo, E-mail: piseri@mi.infn.it [Universita degli Studi di Milano, Dipartimento di Fisica and CIMaINa (Italy)

    2013-02-15

    Nanostructured porous films of carbon with density of about 0.5 g/cm{sup 3} and 200 nm thickness were deposited at room temperature by supersonic cluster beam deposition (SCBD) from carbon clusters formed in the gas phase. Carbon film surface topography, determined by atomic force microscopy, reveals a surface roughness of 16 nm and a granular morphology arising from the low kinetic energy ballistic deposition regime. The material is characterized by a highly disordered carbon structure with predominant sp2 hybridization as evidenced by Raman spectroscopy. The interface properties of nanostructured carbon electrodes were investigated by cyclic voltammetry and electrochemical impedance spectroscopy employing KOH 1 M solution as aqueous electrolyte. An increase of the double layer capacitance is observed when the electrodes are heat treated in air or when a nanostructured nickel layer deposited by SCBD on top of a sputter deposited film of the same metal is employed as a current collector instead of a plain metallic film. This enhancement is consistent with an improved charge injection in the active material and is ascribed to the modification of the electrical contact at the interface between the carbon and the metal current collector. Specific capacitance values up to 120 F/g have been measured for the electrodes with nanostructured metal/carbon interface.

  10. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam

    KAUST Repository

    Alaie, Seyedhamidreza

    2015-02-04

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties. In this work, Pt deposited by FIB is characterized thermally, structurally, and chemically. Its thermal conductivity is found to be substantially lower than the bulk value of Pt, 7.2 W m-1 K-1 versus 71.6 W m-1 K-1 at room temperature. The low thermal conductivity is attributed to the nanostructure of the material and its chemical composition. Pt deposited by FIB is shown, via aberration corrected TEM, to be a segregated mix of nanocrystalline Pt and amorphous C with Ga and O impurities. Ga impurities mainly reside in the Pt while O is homogeneously distributed throughout. The Ga impurity, small grain size of the Pt, and the amorphous carbon between grains are the cause for the low thermal conductivity of this material. Since Pt deposited by FIB is a common material for affixing samples, this information can be used to assess systematic errors in thermal characterization of different nanosamples. This application is also demonstrated by thermal characterization of two carbon nanofibers and a correction using the reported thermal properties of the Pt deposited by FIB.

  11. The Formation of Nanocrystalline Diamond Coating on WC Deposited by Microwave Assisted Plasma CVD

    Science.gov (United States)

    Toff, M. R. M.; Hamzah, E.; Purniawan, A.

    2010-03-01

    Diamond is one form of carbon structure. The extreme hardness and high chemical resistant of diamond coatings determined that many works on this area relate to coated materials for tribological applications in biomedicine, as mechanical seals or cutting tools for hard machining operations. In the work, nanocrystalline diamond (NCD) coated tungsten carbide (WC) have been deposited by microwave assisted plasma chemical vapor deposition (MAPCVD) from CH4/H2 mixtures. Morphology of NCD was investigated by using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The quality of NCD is defined as ratio between diamond and non diamond and also full width at half maximum (FWHM) was determined using Raman spectra. The result found that the NCD structure can be deposited on WC surface using CH4/H2 gas mixture with grain size ˜20 nm to 100 nm. Increase %CH4 concentration due to increase the nucleation of NCD whereas decrease the quality of diamond. Based on Raman spectra, the quality of NCD is in the range ˜98.82-99.01% and 99.56-99.75% for NCD and microcrystalline (MCD), respectively. In addition, FWHM of NCD is high than MCD in the range of 8.664-62.24 cm-1 and 4.24-5.05 cm-1 for NCD and MCD respectively that indicate the crystallineity of NCD is smaller than MCD.

  12. Nanocomposite Coatings Codeposited with Nanoparticles Using Aerosol-Assisted Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Xianghui Hou

    2013-01-01

    Full Text Available Incorporating nanoscale materials into suitable matrices is an effective route to produce nanocomposites with unique properties for practical applications. Due to the flexibility in precursor atomization and delivery, aerosol-assisted chemical vapour deposition (AACVD process is a promising way to synthesize desired nanocomposite coatings incorporating with preformed nanoscale materials. The presence of nanoscale materials in AACVD process would significantly influence deposition mechanism and thus affect microstructure and properties of the nanocomposites. In the present work, inorganic fullerene-like tungsten disulfide (IF-WS2 has been codeposited with Cr2O3 coatings using AACVD. In order to understand the codeposition process for the nanocomposite coatings, chemical reactions of the precursor and the deposition mechanism have been studied. The correlation between microstructure of the nanocomposite coatings and the codeposition mechanism in the AACVD process has been investigated. The heterogeneous reaction on the surface of IF-WS2 nanoparticles, before reaching the substrate surface, is the key feature of the codeposition in the AACVD process. The agglomeration of nanoparticles in the nanocomposite coatings is also discussed.

  13. Energy distribution of secondary particles in ion beam deposition process of Ag: experiment, calculation and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Bundesmann, C.; Feder, R.; Lautenschlaeger, T.; Neumann, H. [Leibniz-Institute of Surface Modification, Leipzig (Germany)

    2015-12-15

    Ion beam sputter deposition allows tailoring the properties of the film-forming, secondary particles (sputtered target particles and backscattered primary particles) and, hence, thin film properties by changing ion beam (ion energy, ion species) and geometrical parameters (ion incidence angle, polar emission angle). In particular, the energy distribution of secondary particles and their influence on the ion beam deposition process of Ag was studied in dependence on process parameters. Energy-selective mass spectrometry was used to measure the energy distribution of sputtered and backscattered ions. The energy distribution of the sputtered particles shows, in accordance with theory, a maximum at low energy and an E{sup -2} decay for energies above the maximum. If the sum of incidence angle and polar emission angle is larger than 90 , additional contributions due to direct sputtering events occur. The energy distribution of the backscattered primary particles can show contributions by scattering at target particles and at implanted primary particles. The occurrence of these contributions depends again strongly on the scattering geometry but also on the primary ion species. The energy of directly sputtered and backscattered particles was calculated using equations based on simple two-particle-interaction whereas the energy distribution was simulated using the well-known Monte Carlo code TRIM.SP. In principal, the calculation and simulation data agree well with the experimental findings. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Ion and electron beam assisted fabrication of nanostructures integrated in microfluidic chips

    International Nuclear Information System (INIS)

    In present work we have designed and fabricated microfluidic chips (MFC) with integrated nets of nanochannels and whisker nanostructures in microchannels for investigation of biological samples in their native environment. We have designed a number of MFC topologies: (a) hydrodynamic traps with nanoscale channels which link microchannels; (b) a structure with regular vertical nanorod (nanowhisker) array, which could be used as a sensitive element. These topologies were created by means of ion and electron beam assisted techniques. These MFCs allow to investigate biological objects by means of high resolution microscopy. Fabricated MFCs were investigated with emulator of biological objects in different buffer solutions.

  15. Thickness effect on properties of titanium film deposited by d.c. magnetron sputtering and electron beam evaporation techniques

    Indian Academy of Sciences (India)

    Nishat Arshi; Junqing Lu; Chan Gyu Lee; Jae Hong Yoon; Bon Heun Koo; Faheem Ahmed

    2013-10-01

    This paper reports effect of thickness on the properties of titanium (Ti) film deposited on Si/SiO2 (100) substrate using two different methods: d.c. magnetron sputtering and electron beam (e-beam) evaporation technique. The structural and morphological characterization of Ti film were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). XRD pattern revealed that the films deposited using d.c. magnetron sputtering have HCP symmetry with preferred orientation along (002) plane, while those deposited with e-beam evaporation possessed fcc symmetry with preferred orientation along (200) plane. The presence of metallic Ti was also confirmed by XPS analysis. FESEM images depicted that the finite sized grains were uniformly distributed on the surface and AFM micrographs revealed roughness of the film. The electrical resistivity measured using four-point probe showed that the film deposited using d.c. magnetron sputtering has lower resistivity of ∼13 cm than the film deposited using e-beam evaporation technique, i.e. ∼60 cm. The hardness of Ti films deposited using d.c. magnetron sputtering has lower value (∼7.9 GPa) than the film deposited using e-beam technique (∼9.4 GPa).

  16. Irradiation-Assisted Stress-Corrosion Cracking of Nitinol During eBeam Sterilization

    Science.gov (United States)

    Smith, Stuart A.; Gause, Brock; Plumley, David; Drexel, Masao J.

    2012-12-01

    Medical device fractures during gamma and electron beam (eBeam) sterilization have been reported. Two common factors in these device fractures were a constraining force and the presence of fluorinated ethylene propylene (FEP). This study investigated the effects of eBeam sterilization on constrained light-oxide nitinol wires in FEP. The goal was to recreate these fractures and determine their root cause. Superelastic nitinol wires were placed inside FEP tubes and constrained with nominal outer fiber strains of 10, 15, and 20%. These samples were then subjected to a range of eBeam sterilization doses up to 400 kGy and compared with unconstrained wires also subjected to sterilization. Fractures were observed at doses of >100 kGy. Analysis of the fracture surfaces indicated that the samples failed due to irradiation-assisted stress-corrosion cracking (IASCC). This same effect was also observed to occur with PTFE at 400 kGy. These results suggest that nitinol is susceptible to IASCC when in the presence of a constraining stress, fluorinated polymers, and irradiation.

  17. Microwave engineering of plasma-assisted CVD reactors for diamond deposition

    Science.gov (United States)

    Silva, F.; Hassouni, K.; Bonnin, X.; Gicquel, A.

    2009-09-01

    The unique properties of CVD diamond make it a compelling choice for high power electronics. In order to achieve industrial use of CVD diamond, one must simultaneously obtain an excellent control of the film purity, very low defect content and a sufficiently rapid growth rate. Currently, only microwave plasma-assisted chemical vapour deposition (MPACVD) processes making use of resonant cavity systems provide enough atomic hydrogen to satisfy these requirements. We show in this paper that the use of high microwave power density (MWPD) plasmas is necessary to promote atomic hydrogen concentrations that are high enough to ensure the deposition of high purity diamond films at large growth rates. Moreover, the deposition of homogeneous films on large surfaces calls for the production of plasma with appropriate shapes and large volumes. The production of such plasmas needs generating a fairly high electric field over extended regions and requires a careful design of the MW coupling system, especially the cavity. As far as MW coupling efficiency is concerned, the presence of a plasma load represents a mismatching perturbation to the cavity. This perturbation is especially important at high MWPD where the reflected fraction of the input power may be quite high. This mismatch can lead to a pronounced heating of the reactor walls. It must therefore be taken into account from the very beginning of the reactor design. This requires the implementation of plasma modelling tools coupled to detailed electromagnetic simulations. This is discussed in section 3. We also briefly discuss the operating principles of the main commercial plasma reactors before introducing the reactor design methodology we have developed. Modelling results for a new generation of reactors developed at LIMHP, working at very high power density, will be presented. Lastly, we show that scaling up this type of reactor to lower frequencies (915 MHz) can result in high density plasmas allowing for fast and

  18. Cluster ion beam facilities

    International Nuclear Information System (INIS)

    A brief state-of-the-art review in the field of cluster-surface interactions is presented. Ionised cluster beams could become a powerful and versatile tool for the modification and processing of surfaces as an alternative to ion implantation and ion assisted deposition. The main effects of cluster-surface collisions and possible applications of cluster ion beams are discussed. The outlooks of the Cluster Implantation and Deposition Apparatus (CIDA) being developed in Guteborg University are shown

  19. Gas-assisted electron-beam-induced nanopatterning of high-quality titanium oxide

    Science.gov (United States)

    Riazanova, A. V.; Costanzi, B. N.; Aristov, A. I.; Rikers, Y. G. M.; Mulders, J. J. L.; Kabashin, A. V.; Dahlberg, E. Dan; Belova, L. M.

    2016-03-01

    Electron-beam-induced deposition of titanium oxide nanopatterns is described. The precursor is titanium tetra-isopropoxide, delivered to the deposition point through a needle and mixed with oxygen at the same point via a flow through a separate needle. The depositions are free of residual carbon and have an EDX determined stoichiometry of TiO2.2. High resolution transmission electron microscopy and Raman spectroscopy studies reveal an amorphous structure of the fabricated titanium oxide. Ellipsometric characterization of the deposited material reveals a refractive index of 2.2-2.4 RIU in the spectral range of 500-1700 nm and a very low extinction coefficient (lower than 10-6 in the range of 400-1700 nm), which is consistent with high quality titanium oxide. The electrical resistivity of the titanium oxide patterned with this new process is in the range of 10-40 GΩ cm and the measured breakdown field is in the range of 10-70 V μm-1. The fabricated nanopatterns are important for a variety of applications, including field-effect transistors, memory devices, MEMS, waveguide structures, bio- and chemical sensors.

  20. Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    We have grown graphene by chemical vapor deposition (CVD) and transferred it onto Si/SiO2 substrates to make tens of micron scale devices for Raman spectroscopy study. The effect of electron beam (e-beam) irradiation of various doses (600 to 12 000 μC/cm2) on CVD grown graphene has been examined by using Raman spectroscopy. It is found that the radiation exposures result in the appearance of the strong disorder D band attributed the damage to the lattice. The evolution of peak frequencies, intensities, and widths of the main Raman bands of CVD graphene is analyzed as a function of defect created by e-beam irradiation. Especially, the D and G peak evolution with increasing radiation dose follows the amorphization trajectory, which suggests transformation of graphene to the nanocrystalline and then to amorphous form. We have also estimated the strain induced by e-beam irradiation in CVD graphene. These results obtained for CVD graphene are in line with previous findings reported for the mechanically exfoliated graphene [D. Teweldebrhan and A. A. Balandin, Appl. Phys. Lett. 94, 013101 (2009)]. The results have important implications for CVD graphene characterization and device fabrication, which rely on the electron microscopy.

  1. The role of electron-stimulated desorption in focused electron beam induced deposition

    DEFF Research Database (Denmark)

    van Dorp, Willem F.; Hansen, Thomas Willum; Wagner, Jakob Birkedal;

    2013-01-01

    We present the results of our study about the deposition rate of focused electron beam induced processing (FEBIP) as a function of the substrate temperature with the substrate being an electron-transparent amorphous carbon membrane. When W(CO)6 is used as a precursor it is observed that the growth...... experiments compared to literature values is consistent with earlier findings by other authors. The discrepancy is attributed to electron-stimulated desorption, which is known to occur during electron irradiation. The data suggest that, of the W(CO)6 molecules that are affected by the electron irradiation......, the majority desorbs from the surface rather than dissociates to contribute to the deposit. It is important to take this into account during FEBIP experiments, for instance when determining fundamental process parameters such as the activation energy for desorption....

  2. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Podestà, Alessandro, E-mail: alessandro.podesta@mi.infn.it, E-mail: pmilani@mi.infn.it; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo, E-mail: alessandro.podesta@mi.infn.it, E-mail: pmilani@mi.infn.it [Centro Interdisciplinare Materiali e Interfacce Nanostrutturati (C.I.Ma.I.Na.), Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy)

    2015-12-21

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO{sub 2}) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.

  3. Influence of laser power on deposition of the chromium atomic beam in laser standing wave

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    One-dimensional deposition of collimated Cr atomic beam focused by a near-resonant Gaussian standing-laser field with wavelength of 425.55 nm is examined from particle-optics approach by using an adaptive step size,fourth-order Runge-Kutta type algorithm.The influence of laser power on deposition of atoms in laser standing wave is discussed and the simulative result shows that the FWHM of nanometer stripe is 102 nm and contrast is 2:1 with laser power equal to 3 mW,the FWHM is 1.2 nm and contrast is 32:1 with laser power equal to 16 mW,but with laser power increase,equal to 50 mW,the nonmeter structure forms the multi-crests and exacerbates.

  4. Ion beam sputter deposition of V 2O 5 thin films

    Science.gov (United States)

    Gallasch, T.; Stockhoff, T.; Baither, D.; Schmitz, G.

    V 2O 5 thin films were deposited by means of dc-ion beam sputtering. To determine the influence of various deposition parameters, samples were characterized by X-ray diffractometry and transmission electron microscopy. Using electron energy loss spectroscopy, the oxidation state of vanadium was quantified based on the chemical shift of absorption edges. Measurement of in-plane direct current showed that the electronic conductivity varies over several orders of magnitude depending on the preparation conditions. The desired structure suitable for battery applications is achieved by sputtering under partial pressure of oxygen and suitable post-annealing under ambient atmosphere. Reversible intercalation of Li into the produced thin films was demonstrated.

  5. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    International Nuclear Information System (INIS)

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO2) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility

  6. Electroluminescence and its excitation mechanism of SiOx films deposited by electron-beam evaporation

    International Nuclear Information System (INIS)

    Blue electroluminescence from SiOx films deposited by electron beam evaporation was observed. This blue emission blueshifted from 450 to 410 nm with increasing applied voltage. The dependences of blue emission on applied voltage, frequency and conduction current were studied. Our experimental data support that blue emission from SiOx films is the result of both recombination of charge carriers injected from opposite electrodes and impact excitation of hot electrons, the recombination of carriers injected is dominant in low and medium electric fields but hot electron impact excitation is dominant under high electric fields

  7. Energy deposition in selected-mammalian cell for several-MeV single-proton beam

    Science.gov (United States)

    Ding, K.; Yu, Z.

    2007-05-01

    The phenomena resulting from interaction between ion beam and mammalian cell pose important problems for biological applications. Classic Bethe-Bloch theory utilizing attached V79 mammalian cell has been conducted in order to establish the stopping powers of the mammalian cell for several-MeV single-proton microbeam. Based on the biological structure of the mammalian cell, a physical model is proposed which presumes that the attached cell is simple MWM model. According to this model and Monte Carlo simulation, we studied the energy deposition and its ratio on the selected attached mammalian cell for MeV proton implantation.

  8. Analyses of the microstructures of Si3N4 film by ion beam enhanced deposition

    International Nuclear Information System (INIS)

    TEM, SEM and X-ray have been used to investigate the microstructures of the silicon ntiride film by Ion Beam Enhanced Deposition (IBED) on surface of 1 Cr19Ni9Ti. Observation reveals that Si3N4 is the amorphous structure and have a little dispersed single crystal phase β-Si3N4 in the film. The physiognomy of Si3N4, interface shape of Si3N4/1Cr18Ni9Ti and the factors influencing on the formation were discussed

  9. Dispersive ground plane core-shell type optical monopole antennas fabricated with electron beam induced deposition.

    Science.gov (United States)

    Acar, Hakkı; Coenen, Toon; Polman, Albert; Kuipers, Laurens Kobus

    2012-09-25

    We present the bottom-up fabrication of dispersive silica core, gold cladding ground plane optical nanoantennas. The structures are made by a combination of electron-beam induced deposition of silica and sputtering of gold. The antenna lengths range from 300 to 2100 nm with size aspect ratios as large as 20. The angular emission patterns of the nanoantennas are measured with angle-resolved cathodoluminescence spectroscopy and compared with finite-element methods. Good overall correspondence between the the measured and calculated trends is observed. The dispersive nature of these plasmonic monopole antennas makes their radiation profile highly tunable. PMID:22889269

  10. Quarterly Report: Microchannel-Assisted Nanomaterial Deposition Technology for Photovoltaic Material Production

    Energy Technology Data Exchange (ETDEWEB)

    Palo, Daniel R.

    2011-04-26

    Quarterly report to ITP for Nanomanufacturing program. Report covers FY11 Q2. The primary objective of this project is to develop a nanomanufacturing process which will reduce the manufacturing energy, environmental discharge, and production cost associated with current nano-scale thin-film photovoltaic (PV) manufacturing approaches. The secondary objective is to use a derivative of this nanomanufacturing process to enable greener, more efficient manufacturing of higher efficiency quantum dot-based photovoltaic cells now under development. The work is to develop and demonstrate a scalable (pilot) microreactor-assisted nanomaterial processing platform for the production, purification, functionalization, and solution deposition of nanomaterials for photovoltaic applications. The high level task duration is shown. Phase I consists of a pilot platform for Gen II PV films along with parallel efforts aimed at Gen III PV quantum dot materials. Status of each task is described.

  11. In situ doping of ZnO nanowires using aerosol-assisted chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Pung, Swee-Yong; Choy, Kwang-Leong; Hou Xianghui; Dinsdale, Keith, E-mail: Kwang-leong.Choy@nottingham.ac.uk [Faculty of Engineering, Energy and Sustainability Research Division, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

    2010-08-27

    An in situ doping approach of producing Al-doped ZnO NWs was demonstrated using an aerosol-assisted chemical vapour deposition (AA-CVD) technique. In this technique, Zn precursor was kept in the middle of a horizontal tube furnace whereas the dopant solution was kept in an aerosol generator, which was located outside the furnace. The Al aerosol was flowed into the reactor during the growth of NWs in order to achieve in situ doping. Al-doped ZnO NWs were synthesized as verified by the combination of XRD, TEM/EDS and TOF-SIMS analysis. Highly (00.2) oriented ZnO seed layers were used to promote vertically aligned growth of Al-doped ZnO NWs. Lastly, a growth mechanism of vertically aligned Al-doped ZnO NWs was discussed.

  12. Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation

    Institute of Scientific and Technical Information of China (English)

    Jiang Ran; Meng Lingguo; Zhang Xijian; Hyung-Suk Jung; Cheol Seong Hwang

    2012-01-01

    Atomic layer deposition ofan Al2O3 dielectric on ultrathin graphite is studied in order to investigate the integration of a high k dielectric with graphite-based substrates.Electron beam irradiation on the graphite surface is followed by a standard atomic layer deposition of Al2O3.Improvement of the Al2O3 layer deposition morphology was observed when using this radiation exposure on graphite.This result may be attributed to the amorphous change of the graphite layers during electron beam irradiation.

  13. Substrate effects on the electron-beam-induced deposition of platinum from a liquid precursor

    Science.gov (United States)

    Donev, Eugenii U.; Schardein, Gregory; Wright, John C.; Hastings, J. Todd

    2011-07-01

    Focused electron-beam-induced deposition using bulk liquid precursors (LP-EBID) is a new nanofabrication technique developed in the last two years as an alternative to conventional EBID, which utilizes cumbersome gaseous precursors. Furthermore, LP-EBID using dilute aqueous precursors has been demonstrated to yield platinum (Pt) nanostructures with as-deposited metal content that is substantially higher than the purity achieved by EBID with currently available gaseous precursors. This advantage of LP-EBID--along with the ease of use, low cost, and relative innocuousness of the liquid precursors--holds promise for its practical applicability in areas such as rapid device prototyping and lithographic mask repair. One of the feasibility benchmarks for the LP-EBID method is the ability to deposit high-fidelity nanostructures on various substrate materials. In this study, we report the first observations of performing LP-EBID on bare and metal-coated silicon-nitride membranes, and compare the resulting Pt deposits to those obtained by LP-EBID on polyimide membranes in terms of nucleation, morphology, size dependence on electron dose, and purity.

  14. Flexible, ionic liquid-based micro-supercapacitor produced by supersonic cluster beam deposition

    International Nuclear Information System (INIS)

    Highlights: • We exploited Supersonic Cluster Beam Deposition for the fabrication of a flexible, planar micro-supercapacitor featuring nanostructured carbon electrodes deposited on a plastic Mylar substrate and N-trimethyl-N-propyl-ammonium bis(trifluoromethanesulfonyl) imide (N1113TFSI) ionic liquid electrolyte. • The micro-supercapacitor operates at 3 V above RT up to 80 °C with a capacitance density approaching 10 F cm−3 and delivering maximum specific energy and power densities of 10 mWh cm−3 and 8-10 W cm−3. • The micro-supercapacitor features long cycling stability over 2x104cycle on flat and bent configuration. -- Graphical abstract: Display Omitted -- Abstract: Power generation and storage in electronics require flexible, thin micro-electrochemical energy storage/conversion systems. Micro-supercapacitors (μSCs) with double-layer capacitance carbon electrodes are attracting much attention for their capability of delivering short power pulses with high stability over repeated charge/discharge cycling. Supersonic Cluster Beam Deposition (SCBD) is an effective strategy for the development of nanostructured, binder-free porous carbon electrodes on temperature sensitive substrates including polymers. We exploited SCBD for the development of a flexible, planar μSC featuring nanostructured carbon (ns-C) electrodes deposited on a plastic Mylar substrate and N-trimethyl-N-propyl-ammonium bis(trifluoromethanesulfonyl) imide (N1113TFSI) ionic liquid electrolyte. The electrochemical performance at different temperatures of the μSC which operates at 3 V above RT up to 80 °C with a capacitance density approaching 10 F cm−3 and delivering maximum specific energy and power densities of 10 mWh cm−3 and 8-10 W cm−3 with long cycling stability over 2 × 104 cycles is here reported and discussed

  15. Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

    International Nuclear Information System (INIS)

    Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min−1 at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min−1 were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s

  16. Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

    Energy Technology Data Exchange (ETDEWEB)

    Zaleta-Alejandre, E.; Balderas-Xicoténcatl, R. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Arrieta, M.L. Pérez [Universidad Autónoma de Zacatecas, Unidad Académica de Física, Calzada Solidaridad esq. Paseo, La Bufa s/n, C.P. 98060, Zacatecas, México (Mexico); Meza-Rocha, A.N.; Rivera-Álvarez, Z. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Falcony, C., E-mail: cfalcony@fis.cinvestav.mx [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico)

    2013-10-01

    Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min{sup −1} at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min{sup −1} were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s.

  17. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    Energy Technology Data Exchange (ETDEWEB)

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M. (Argonne National Lab., IL (United States)); Lin, Y.P. (Argonne National Lab., IL (United States) Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science); Schultz, J.A. (Ionwerks, Inc., Houston, TX (United States)); Schmidt, H. (Schmidt Instruments, Inc., Houston, TX (United States)); Liu, Y.L. (Argonne National Lab., IL (United States

    1992-01-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described.

  18. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    Energy Technology Data Exchange (ETDEWEB)

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M. [Argonne National Lab., IL (United States); Lin, Y.P. [Argonne National Lab., IL (United States)]|[Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science; Schultz, J.A. [Ionwerks, Inc., Houston, TX (United States); Schmidt, H. [Schmidt Instruments, Inc., Houston, TX (United States); Liu, Y.L. [Argonne National Lab., IL (United States)]|[Wisconsin Univ., Milwaukee, WI (United States). Dept. of Materials Science; Auciello, O. [Microelectronics Center of North Carolina, Research Triangle Park, NC (United States); Barr, T. [Wisconsin Univ., Milwaukee, WI (United States). Dept. of Materials Science; Chang, R.P.H. [Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science

    1992-08-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described.

  19. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    KAUST Repository

    Batra, Nitin M

    2015-10-09

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode–interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode–nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  20. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    Science.gov (United States)

    Batra, Nitin M.; Patole, Shashikant P.; Abdelkader, Ahmed; Anjum, Dalaver H.; Deepak, Francis L.; Costa, Pedro M. F. J.

    2015-11-01

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode-interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode-nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  1. Graphene crystal growth by thermal precipitation of focused ion beam induced deposition of carbon precursor via patterned-iron thin layers

    Directory of Open Access Journals (Sweden)

    Rius Gemma

    2014-01-01

    Full Text Available Recently, relevant advances on graphene as a building block of integrated circuits (ICs have been demonstrated. Graphene growth and device fabrication related processing has been steadily and intensively powered due to commercial interest; however, there are many challenges associated with the incorporation of graphene into commercial applications which includes challenges associated with the synthesis of this material. Specifically, the controlled deposition of single layer large single crystal graphene on arbitrary supports, is particularly challenging. Previously, we have reported the first demonstration of the transformation of focused ion beam induced deposition of carbon (FIBID-C into patterned graphitic layers by metal-assisted thermal treatment (Ni foils. In this present work, we continue exploiting the FIBID-C approach as a route for graphene deposition. Here, thin patterned Fe layers are used for the catalysis of graphenization and graphitization. We demonstrate the formation of high quality single and few layer graphene, which evidences, the possibility of using Fe as a catalyst for graphene deposition. The mechanism is understood as the minute precipitation of atomic carbon after supersaturation of some iron carbides formed under a high temperature treatment. As a consequence of the complete wetting of FIBID-C and patterned Fe layers, which enable graphene growth, the as-deposited patterns do not preserve their original shape after the thermal treatment

  2. Effects of precursor evaporation temperature on the properties of the yttrium oxide thin films deposited by microwave electron cyclotron resonance plasma assisted metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Yttrium oxide thin films are deposited using indigenously developed metal organic precursor (2,2,6,6-tetra methyl-3,5-hepitane dionate) yttrium, commonly known as Y(thd)3 (synthesized by ultrasound method). Microwave electron cyclotron resonance plasma assisted metal organic chemical vapor deposition process was used for these depositions. Depositions were carried out at a substrate temperature of 350 oC with argon to oxygen gas flow rates fixed to 1 sccm and 10 sccm respectively throughout the experiments. The precursor evaporation temperature (precursor temperature) was varied over a range of 170-275 oC keeping all other parameters constant. The deposited coatings are characterized by X-ray photoelectron spectroscopy, glancing angle X-ray diffraction and infrared spectroscopy. Thickness and refractive index of the coatings are measured by the spectroscopic ellipsometry. Hardness and elastic modulus of the films are measured by load depth sensing nanoindentation technique. C-Y2O3 phase is deposited at lower precursor temperature (170 oC). At higher temperature (220 oC) cubic yttrium oxide is deposited with yttrium hydroxide carbonate as a minor phase. When the temperature of the precursor increased (275 oC) further, hexagonal Y2O3 with some multiphase structure including body centered cubic yttria and yttrium silicate is observed in the deposited film. The properties of the films drastically change with these structural transitions. These changes in the film properties are correlated here with the precursor evaporation characteristics obtained at low pressures.

  3. Hybrid chemical vapour and nanoceramic aerosol assisted deposition for multifunctional nanocomposite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Warwick, Michael E.A.; Dunnill, Charles W.; Goodall, Josie; Darr, Jawwad A.; Binions, Russell, E-mail: uccarbi@ucl.ac.uk

    2011-07-01

    Hybrid atmospheric pressure chemical vapour and aerosol assisted deposition via the reaction of vanadium acetylacetonate and a suspension of preformed titanium dioxide or cerium dioxide nanoparticles, led to the production of vanadium dioxide nanocomposite thin films on glass substrates. The preformed nanoparticle oxides used for the aerosol were synthesised using a continuous hydrothermal flow synthesis route involving the rapid reaction of a metal salt solution with a flow of supercritical water in a flow reactor. Multifunctional nanocomposite thin films from the hybrid deposition process were characterised using scanning electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The functional properties of the films were evaluated using variable temperature optical measurements to assess thermochromic behaviour and methylene blue photodecolourisation experiments to assess photocatalytic activity. The tests show that the films are multifunctional in that they are thermochromic (having a large change in infra-red reflectivity upon exceeding the thermochromic transition temperature) and have significant photocatalytic activity under irradiation with 254 nm light.

  4. Chemical vapor deposition graphene transfer process to a polymeric substrate assisted by a spin coater

    Science.gov (United States)

    Kessler, Felipe; da Rocha, Caique O. C.; Medeiros, Gabriela S.; Fechine, Guilhermino J. M.

    2016-03-01

    A new method to transfer chemical vapor deposition graphene to polymeric substrates is demonstrated here, it is called direct dry transfer assisted by a spin coater (DDT-SC). Compared to the conventional method DDT, the improvement of the contact between graphene-polymer due to a very thin polymeric film deposited by spin coater before the transfer process prevented air bubbles and/or moisture and avoided molecular expansion on the graphene-polymer interface. An acrylonitrile-butadiene-styrene copolymer, a high impact polystyrene, polybutadiene adipate-co-terephthalate, polylactide acid, and a styrene-butadiene-styrene copolymer are the polymers used for the transfers since they did not work very well by using the DDT process. Raman spectroscopy and optical microscopy were used to identify, to quantify, and to qualify graphene transferred to the polymer substrates. The quantity of graphene transferred was substantially increased for all polymers by using the DDT-SC method when compared with the DDT standard method. After the transfer, the intensity of the D band remained low, indicating low defect density and good quality of the transfer. The DDT-SC transfer process expands the number of graphene applications since the polymer substrate candidates are increased.

  5. In-situ monitoring of plasma ion assisted deposition (PIAD) processes

    Science.gov (United States)

    Harhausen, Jens; Foest, Rüdiger; Loffhagen, Detlef

    2015-09-01

    Present photonics applications depend on accurate production techniques. Plasma based processes might be termed the backbone of multilayer optical coatings which are the key components of dielectric mirrors, filters or antireflectives. However, the sector strongly relies on process recipies based on empirical optimization of thin film properties. Limitations in quality, repeatability and yield are faced. In this contribution results of efforts on plasma characterization of a beam source employed for PIAD are presented. Data on electron and ion kinetics as well as optical emission facilitated a comprehensive understanding of underlying physics of ion beam generation and propagation in an industrial type batch coater. In order to promote the development of next generation production plants, concepts for in-situ diagnostics are investigated. Results from monitoring of optical radiance of the plasma plume near the source and electron density near the substrates are discussed. The novel concept of the multipole resonance probe is applied during deposition in order to trace variations not only in magnitude of plasma density, but also its spatial distribution. Coating materials comprise TiO2, Ta2O5, Al2O3 and SiO2. Funded by the German Federal Ministry of Education and Research (BMBF) under Grant 13N13213).

  6. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Zheng, Jian-Guo; Liu, Jianlin

    2016-07-01

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5-6 nm)/G (26-27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ˜2.5-3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  7. Laser beam soldering of fine-pitch technology packages with solid solder deposits

    Science.gov (United States)

    Pucher, Hans-Joerg; Glasmacher, Mathias; Geiger, Manfred

    1996-04-01

    Micro electronics is a key technology attracting the attention of information, communication, automation and data processing technologies. Ongoing miniaturization combined with an increasing number of I/Os has inevitably lead to ever finer lead geometries. Therefore the demands put upon the surface mount technology are increasing continuously. Processing of high lead count fine pitch packages, for example those which are applied in high-capacity computers, has not increased the demands put upon the assembly process only, but also on the connecting techniques. By reflow soldering with laser beam radiation the benefits from the tool `laser beam' are used extensively, for example contact and force free processing, strictly localized heating and the good controllability thereof, formation of fine crystalline and homogeneous structures, etc. Within the scope of this paper the fundamentals of laser beam soldering are discussed for fine pitch lead frames (pitch 300 micrometers ) for plastic packages, made by a modified CuFe2P alloy with a 5 micrometers Sn90Pb plating, on solid solder depths (Sn63Pb) performed by the so called High-Pad process. These investigations are unique in the field of laser beam soldering and are carried out by means of a Nd:YAG-laser. A pyrometer is used for detection of the emission of the temperature radiation of the joining area for process control. The additional use of a high-speed camera gives a detailed description of the melting and wetting process. The influence of laser beam parameters and the volume of the solid solder deposits on the joining result are presented.

  8. Ion beam deposition of DLC and nitrogen doped DLC thin films for enhanced haemocompatibility on PTFE

    International Nuclear Information System (INIS)

    Diamond-like carbon (DLC) and N-doped DLC (DLC:N) thin films have been synthesized on polytetrafluroethylene (PTFE) and silicon wafers using ion beam deposition. Raman spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy and scanning electron microscopy were used to study the structural and morphological properties of the coated surface. The results show that the ion beam deposited DLC thin films exhibit high hardness and Young's modulus, low coefficient of friction and high adhesion to the substrate. Low concentration of nitrogen doping in DLC improves the mechanical properties and reduces the surface roughness. DLC coating decreases the surface energy and improves the wettability of PTFE. The platelet adhesion results show that the haemocompatibility of DLC coated PTFE, especially DLC:N coated PTFE, has been significantly enhanced as compared with uncoated PTFE. SEM observations show that the platelet reaction on the DLC and DLC:N coated PTFE was minimized as the platelets were much less aggregated and activated.

  9. Magnetotransport properties of high-quality cobalt nanowires grown by focused-electron-beam-induced deposition

    International Nuclear Information System (INIS)

    High-quality cobalt nanowires have been grown by focused-electron-beam-induced deposition (FEBID) and their magnetic and transport properties determined. The nanowires contain up to about 95% Co atomic percentage, as measured by EDX spectroscopy, which remarkably represents a high value compared with other metal deposits grown by the same technique. The Co content has been found to correlate with the beam current used for the growth. The magnetotransport properties have been studied on individual nanowires through 4-probe measurements. For the nanowires with the highest Co content, the resistivity at room temperature is low (∼40 μΩ cm), and shows metallic temperature dependence. The magnetotransport properties clearly demonstrate the ferromagnetic nature of the nanowire, with a saturation magnetization of Ms = 1329 ± 20 emu cm-3, very close to the bulk one. Due to the local character of this type of growth at targeted places and its high lateral resolution, these results pave the way for the creation of magnetic nanostructures and devices with the full potentiality of high-quality Co.

  10. Ion-beam analysis of CuInSe2 solar cells deposited on polyimide foil.

    Science.gov (United States)

    Spemann, D; Lorenz, M; Butz, T; Otte, K

    2004-06-01

    CuInSe(2) (CIS) solar cells deposited on polyimide foil by the Solarion company in a web-coater-based process using sputter and evaporation techniques were investigated in the ion beam laboratory LIPSION of the University of Leipzig by means of Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission (PIXE) using high-energy broad ion beams and microbeams. From these measurements the composition of the absorber and the lateral homogeneity and film thicknesses of the individual layers could be determined on the basis of some reasonable assumptions. For the first time, quantitative depth profiling of the individual elements was performed by microPIXE measurements on a beveled section prepared by ion-beam etching of a CIS solar cell. Within the CIS absorber layer no significant concentration-depth gradients were found for Cu, In, and Se, in contrast with results from secondary neutral mass spectrometry (SNMS) depth profiling, which was applied to the same samples for comparison. Furthermore, both PIXE and SNMS showed the presence of a remarkable amount of Cd from the CdS buffer layer in the underlying absorber. PMID:15179537

  11. Ion-beam-induced epitaxial crystallization of implanted and chemical vapor deposited amorphous silicon

    Science.gov (United States)

    La Ferla, A.; Priolo, F.; Spinella, C.; Rimini, E.; Baroetto, F.; Ferla, G.

    1989-03-01

    The dependence of ion-beam enhanced epitaxial growth of amorphous Si layers on impurities either dissolved in the film or present at the film-substrate interface is considered. In the case of ion implanted layers, electrically active dopants, like B, P, As at concentrations above 1 × 10 20/cm 3, enhance the rate by a factor of 2 with respect to the undoped layer. The enhancement shows also a weak dependence on the dopant concentration. Inert impurities, like Ar, which prevent pure thermal regrowth, do not show any appreciable influence on the ion-beam-induced growth rate. Chemical vapor deposited Si layers with a thin native interfacial oxide layer can also be epitaxially regrown under ion irradiation. A critical fluence is needed before the interfacial oxide breaks down and broadens, allowing the epitaxial crystallization to take place. This process is characterized by an activation energy of 0.44 eV. The complex phenomenon of ion-beam-induced crystallization involves a dynamical interaction between production and annealing of point defects. The presence of electrically active dopants probably influences the lifetime of point defects. Impurities which prevent thermal regrowth are instead dissolved by ballistic effects and/or radiation-enhanced mixing.

  12. Influence of deposition rate on the properties of ZrO2 thin films prepared in electron beam evaporation method

    Institute of Scientific and Technical Information of China (English)

    Dongping Zhang(张东平); Meiqiong Zhan(占美琼); Ming Fang(方明); Hongbo He(贺洪波); Jianda Shao(邵建达); Zhengxiu Fan(范正修)

    2004-01-01

    ZrO2 thin films were prepared in electron beam thermal evaporation method. And the deposition rate changed from 1.3 to 6.3 nm/s in our study. X-ray diffractometer and spectrophotometer were employed to characterize the films. X-ray diffraction (XRD) spectra pattern shows that films structure changed from amorphous to polycrystalline with deposition rate increasing. The results indicate that internal stresses of the films are compressive in most case. Thin films deposited in our study are inhomogeneous, and the inhomogeneity is enhanced with the deposition rate increasing.

  13. Thermoluminescence of Y2O3:Tb3+ thin films deposited by electron beam evaporation

    International Nuclear Information System (INIS)

    Most thermoluminescent materials are created using crystal growth techniques; however, it would be of great utility to identify those few thermoluminescent materials that can be deposited using simpler methods, for example to be compatible with the early portions of a silicon integrated circuit or microelectromechanical fabrication process. In this work, thin films of yttrium oxide with a terbium impurity (Y2O3:Tb) were deposited on silicon wafers by electron beam evaporation. The source for the Y2O3:Tb was made by combining Y2O3 and Tb4O7 powders. The approximate thicknesses of the deposited films were 350 nm. After deposition, the films were annealed at 1100 °C for 30 s to improve crystallinity. There is a strong correlation between the x-ray diffraction (XRD) peak intensity and the thermoluminescent glow curve intensity. The glow curve displays at least two peaks at 140 °C and 230 °C. The emission spectra was measured using successive runs with a monochromator set to a different wavelength for each run. There are two main emission peaks at 490 nm and 540 nm. The terbium impurity concentration of approximately 1 mol% was measured using Rutherford backscattering spectrometry (RBS). The Y2O3:Tb is sensitive to UV, x-ray, and gamma radiation. The luminescent intensity per unit mass of UV irradiated Y2O3:Tb was about 2 times that of x-ray irradiated TLD-100. -- Highlights: • Y2O3:Tb3+ thin film can be deposited using the common microfabrication technique of electron beam evaporation. • The Y2O3:Tb3+ requires an anneal of at least 900 °C to show thermoluminescence and 1100 °C anneal for the strongest thermoluminescent signal. • The Y2O3:Tb3+ will show a glow curve after being exposed to ionizing radiation from UV, x-ray, and gamma ray sources. • The luminescent intensity per unit mass of the UV irradiated Y2O3:Tb3+ is twice that of x-ray irradiated TLD-100(LiF:Ti, Mg)

  14. Energy deposition measurements of a large-diameter, intense relativistic electron beam for high-power gas laser excitation

    International Nuclear Information System (INIS)

    Measurements of electron-beam (e-beam) energy deposition in gaseous medium by a segmented totally stopping calorimeter and a pressure jump method are described, both of which gave the same values. Typical e-beam parameters are 2 MV, 80 kA, and 65 ns (FWHM). The e-beam cross-sectional area is 10 cm in diameter. First, the radial distribution of the e-beam current generated from the field-emission diode as a function of the axial magnetic field was measured. Next, for applications to longitudinal excitation of the high-power gas lasers, the e-beam energy deposition characteristics are measured in N2 for the propagation distance up to 2.3 m in terms of the axial magnetic field, the N2 gas pressure, and the radial e-beam distribution. As a result, the axial field equivalent to the self-magnetic field of the electron beam can acceptably control the e-beam generation and propagation uniformities

  15. Material properties of ion beam deposited oxides for the optoelectronic industry

    International Nuclear Information System (INIS)

    High quality, dense films of SiO2, Al2O3, Ta2O5, and TiO2 were deposited with an ion beam deposition system (IBD). IBD has significant advantages over other techniques in terms of directionality, stress control, repeatability, thermal stability, and film uniformity [J. J. Cuomo, J. M. E. Harper, C. R. Guarnieri, D. S. Yee, L. J. Atanasio, J. Angilello, C. T. Wu, and R. H. Hammond, J. Vac. Sci. Technol. 20, 349 (1982)]. To decrease the surface damage induced by ion bombardment, a multi-energy process was developed. This is especially important for laser facet coatings. The oxide films were optimized for the desired refractive index and zero absorption. Stress values of -0.2 to -0.5 GPa (compressive) and extremely good uniformity (2, all films remained in compressive stress after annealing. TiO2 turned tensile. With the variety of oxide materials developed, designing an anti-reflective or highly reflective stack, which satisfies requirements of stress, uniformity, deposition rate, and reflectance, becomes a matter of choosing the appropriate material set

  16. Structural transitions in electron beam deposited Co–carbonyl suspended nanowires at high electrical current densities

    Directory of Open Access Journals (Sweden)

    Gian Carlo Gazzadi

    2015-06-01

    Full Text Available Suspended nanowires (SNWs have been deposited from Co–carbonyl precursor (Co2(CO8 by focused electron beam induced deposition (FEBID. The SNWs dimensions are about 30–50 nm in diameter and 600–850 nm in length. The as-deposited material has a nanogranular structure of mixed face-centered cubic (FCC and hexagonal close-packed (HCP Co phases, and a composition of 80 atom % Co, 15 atom % O and 5 atom % C, as revealed by transmission electron microscopy (TEM analysis and by energy-dispersive X-ray (EDX spectroscopy, respectively. Current (I–voltage (V measurements with current densities up to 107 A/cm2 determine different structural transitions in the SNWs, depending on the I–V history. A single measurement with a sudden current burst leads to a polycrystalline FCC Co structure extended over the whole wire. Repeated measurements at increasing currents produce wires with a split structure: one half is polycrystalline FCC Co and the other half is graphitized C. The breakdown current density is found at 2.1 × 107 A/cm2. The role played by resistive heating and electromigration in these transitions is discussed.

  17. Structural transitions in electron beam deposited Co-carbonyl suspended nanowires at high electrical current densities.

    Science.gov (United States)

    Gazzadi, Gian Carlo; Frabboni, Stefano

    2015-01-01

    Suspended nanowires (SNWs) have been deposited from Co-carbonyl precursor (Co2(CO)8) by focused electron beam induced deposition (FEBID). The SNWs dimensions are about 30-50 nm in diameter and 600-850 nm in length. The as-deposited material has a nanogranular structure of mixed face-centered cubic (FCC) and hexagonal close-packed (HCP) Co phases, and a composition of 80 atom % Co, 15 atom % O and 5 atom % C, as revealed by transmission electron microscopy (TEM) analysis and by energy-dispersive X-ray (EDX) spectroscopy, respectively. Current (I)-voltage (V) measurements with current densities up to 10(7) A/cm(2) determine different structural transitions in the SNWs, depending on the I-V history. A single measurement with a sudden current burst leads to a polycrystalline FCC Co structure extended over the whole wire. Repeated measurements at increasing currents produce wires with a split structure: one half is polycrystalline FCC Co and the other half is graphitized C. The breakdown current density is found at 2.1 × 10(7) A/cm(2). The role played by resistive heating and electromigration in these transitions is discussed. PMID:26199833

  18. Stability of a current carrying single nanowire of tungsten (W) deposited by focused ion beam

    Science.gov (United States)

    Mandal, Pabitra; Das, Bipul; Raychaudhuri, A. K.

    2016-02-01

    We report an investigation on the stability of single W nanowire (NW) under direct current stressing. The NW of width ≈ 80 nm and thickness ≈ 100 nm was deposited on a SiO2/Si substrate by Focused Ion Beam (FIB) of Ga ions using W(CO)6 as a precursor. Such nanowires, used as interconnects in nanoelectronics, contain C and Ga in addition to W. The stability studies, done for the first time in such FIB deposited NWs, show that under current stressing these NWs behave very differently from that observed in conventional metal NWs or interconnects. The failure of such FIB deposited NW occurs at a relatively low current density (˜1011 A/m2) which is an order or more less than that seen in conventional metal NWs. The failure accompanies with formation of voids and hillocks, suggesting ionic migration as the cause of failure. However, the polarities of void and hillock formations are opposite to those observed in conventional metal interconnects. This observation along with preferential agglomeration of Ga ions in hillocks suggests that the ionic migration in such NWs is dominated by direct force as opposed to the migration driven by electron wind force in conventional metal interconnects.

  19. Methods for assisting recovery of damaged brain and spinal cord using arrays of X-Ray microplanar beams

    Science.gov (United States)

    Dilmanian, F. Avraham; McDonald, III, John W.

    2007-12-04

    A method of assisting recovery of an injury site of brain or spinal cord injury includes providing a therapeutic dose of X-ray radiation to the injury site through an array of parallel microplanar beams. The dose at least temporarily removes regeneration inhibitors from the irradiated regions. Substantially unirradiated cells surviving between the microplanar beams migrate to the in-beam irradiated portion and assist in recovery. The dose may be administered in dose fractions over several sessions, separated in time, using angle-variable intersecting microbeam arrays (AVIMA). Additional doses may be administered by varying the orientation of the microplanar beams. The method may be enhanced by injecting stem cells into the injury site.

  20. Influence of travel speed on spray deposition uniformity from an air-assisted variable-rate sprayer

    Science.gov (United States)

    A newly developed LiDAR-guided air-assisted variable-rate sprayer for nursery and orchard applications was tested at various travel speeds to compare its spray deposition and coverage uniformity with constant-rate applications. Spray samplers, including nylon screens and water-sensitive papers (WSP)...

  1. Progress on channel spark development and application of pulsed electron beam deposition (PED) in the field of medical coating work

    International Nuclear Information System (INIS)

    A promising source for Pulsed Electron Beam Deposition (PED) is the channel spark. Recent improvements helped to reduce beam instabilities which up to now have limited the life time of the system. The beam power could be increased and because of better beam quality the transport length of the beam is increased from 1 to several centimeters (up to 10 cm). Together with other improvements on the triggering system and beam transport in dielectric tubes, the channel spark approaches industrial standards. An overview of actual applications in research and industry will be presented. An attractive feature of the pulsed electron beam thin film deposition is the conservation of stoichiometry even during deposition of multi-component earth-alkali and alkali glasses. Specially developed glasses like BIOGLAS registered have the ability to anchor soft living tissue at the surface. In form of a bulk material bio active glasses are brittle limiting its applications. Contrary to brittle bulk material a thin layers on medical implants exhibits reliable bio-functionality. Coating of implants with this category of materials is subject of the European INCOMED project (Innovative Coating of Medical Implants with Soft Tissue Anchoring Ability) which just has started

  2. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Control of the crystal phases of GaAs nanowires (NWs) is essential to eliminate the formation of stacking faults which deteriorate the optical and electronic properties of the NWs. In addition, the ability to control the crystal phase of NWs provides an opportunity to engineer the band gap without changing the crystal material. We show that the crystal phase of GaAs NWs grown on GaAs(111)B substrates by molecular beam epitaxy using the Au-assisted vapor–liquid–solid growth mechanism can be tuned between wurtzite (WZ) and zinc blende (ZB) by changing the V/III flux ratio. As an example we demonstrate the realization of WZ GaAs NWs with a ZB GaAs insert that has been grown without changing the substrate temperature. (paper)

  3. Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Lorenzo Rigutti

    2009-01-01

    Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

  4. A field-assisted moderator for low-energy positron beams

    Science.gov (United States)

    Beling, C. D.; Simpson, R. I.; Charlton, M.; Jacobsen, F. M.; Griffith, T. C.; Moriarty, P.; Fung, S.

    1987-01-01

    A new positron field-assisted (FA) moderator based on the drift of positrons across a cooled silicon crystal is proposed. Using estimates for both the β + implantation profile and attainable drift velocities, the efficiency of drift to a slow e+ emitting surface is calculated using a diffusion equation which incorporates terms describing positron drift and annihilation. It is conjectured that efficiencies of up to 10% can be achieved. The use of epitaxially grown metallic suicide contacts to facilitate the application of the electric field is described and the consequences of using such contacts are fully discussed. Applications of the FA transmission mode moderator described here to produce timed brightness enhanced beams are briefly discussed.

  5. Non-linear current-voltage characteristics of NS-tunnel junctions prepared by focused ion beam induced deposition

    International Nuclear Information System (INIS)

    We used a focused Ga-ion beam and the precursor W(CO)6 -injected into a vacuum chamber nearby the focal area of the beam- to create tungsten containing superconducting deposits with a critical temperature of about 5.2 K. The deposits were fabricated onto oxidized aluminum contacts pre-patterned by UV-photolithography. I-V- and V-dI/dV- measurements have been performed between 0.3 K and 6 K using a He3-cryostat. For selected beam energies used during deposition the samples show Josephson-junction like behaviour or tunneling of quasiparticles for temperatures below the superconducting transition of aluminum at about 2 K. In the temperature range between the superconducting transitions of the two electrodes Andreev-reflection was observed.

  6. Development of aerosol assisted chemical vapor deposition for thin film fabrication

    Science.gov (United States)

    Maulana, Dwindra Wilham; Marthatika, Dian; Panatarani, Camellia; Mindara, Jajat Yuda; Joni, I. Made

    2016-02-01

    Chemical vapor deposition (CVD) is widely used to grow a thin film applied in many industrial applications. This paper report the development of an aerosol assisted chemical vapor deposition (AACVD) which is one of the CVD methods. Newly developed AACVD system consists of a chamber of pyrex glass, two wire-heating elements placed to cover pyrex glass, a substrate holder, and an aerosol generator using an air brush sprayer. The temperature control system was developed to prevent condensation on the chamber walls. The control performances such as the overshoot and settling time were obtained from of the developed temperature controller. Wire-heating elements were controlled at certain setting value to heat the injected aerosol to form a thin film in the substrate. The performance of as-developed AACVD system tested to form a thin film where aerosol was sprayed into the chamber with a flow rate of 7 liters/minutes, and vary in temperatures and concentrations of precursor. The temperature control system have an overshoot around 25 °C from the desired set point temperature, very small temperature ripple 2 °C and a settling time of 20 minutes. As-developed AACVD successfully fabricated a ZnO thin film with thickness of below 1 µm. The performances of system on formation of thin films influenced by the generally controlled process such as values of setting temperature and concentration where the aerosol flow rate was fixed. Higher temperature was applied, the more uniform ZnO thin films were produced. In addition, temperature of the substrate also affected on surface roughness of the obtained films, while concentration of ZnO precursor determined the thickness of produce films. It is concluded that newly simple AACVD can be applied to produce a thin film.

  7. Nucleation and growth of cubic boron nitride films produced by ion-assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, T.A.; Medlin, D.L.; Mirkarimi, P.B.; McCarty, K.F.; Klaus, E.J.; Boehme, D.R.; Johnsen, H.A.; Mills, M.J.; Ottesen, D.K. [Sandia National Labs., Livermore, CA (United States)

    1993-12-31

    We are studying the boron nitride system using a pulsed excimer laser to ablate from hexagonal BN (cBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (25--800C) Si (100) surfaces and are using a broad-beam ion source operated with Ar and N{sub 2} source gases to produce BN films with a high percentage of sp{sup 3}-bonded cBN. In order to optimize growth and nucleation of cBN films, parametric studies of the growth parameters have been performed. The best films to date show >85% sp{sup 3}-bonded BN as determined from Fourier-transform infrared (FTIR) reflection spectroscopy. High resolution transmission electron microscopy (TEM) and selected area electron diffraction confirm the presence of cBN in these samples. The films are polycrystalline and show grain sizes up to 30--40 mn. We find from both the FTIR and TEM analyses that the cBN content in these films evolves with growth time. Initially, the films are deposited as hBN and the cBN nucleates on this hBN underlayer. Importantly, the position of the cBN IR phonon also changes with growth time. Initially this mode appears near 1130 cm{sup {minus}1} and the position decreases with growth time to a constant value of 1085 cm{sup {minus}1}. Since in bulk cBN this IR mode appears at 1065 cm{sup {minus}1}, a large compressive stress induced by the ion bombardment is suggested. In addition, we report on the variation in cBN percentage with temperature.

  8. High aspect ratio AFM Probe processing by helium-ion-beam induced deposition.

    Science.gov (United States)

    Onishi, Keiko; Guo, Hongxuan; Nagano, Syoko; Fujita, Daisuke

    2014-11-01

    A Scanning Helium Ion Microscope (SHIM) is a high resolution surface observation instrument similar to a Scanning Electron Microscope (SEM) since both instruments employ finely focused particle beams of ions or electrons [1]. The apparent difference is that SHIMs can be used not only for a sub-nanometer scale resolution microscopic research, but also for the applications of very fine fabrication and direct lithography of surfaces at the nanoscale dimensions. On the other hand, atomic force microscope (AFM) is another type of high resolution microscopy which can measure a three-dimensional surface morphology by tracing a fine probe with a sharp tip apex on a specimen's surface.In order to measure highly uneven and concavo-convex surfaces by AFM, the probe of a high aspect ratio with a sharp tip is much more necessary than the probe of a general quadrangular pyramid shape. In this paper we report the manufacture of the probe tip of the high aspect ratio by ion-beam induced gas deposition using a nanoscale helium ion beam of SHIM.Gas of platinum organic compound was injected into the sample surface neighborhood in the vacuum chamber of SHIM. The decomposition of the gas and the precipitation of the involved metal brought up a platinum nano-object in a pillar shape on the normal commercial AFM probe tip. A SHIM system (Carl Zeiss, Orion Plus) equipped with the gas injection system (OmniProbe, OmniGIS) was used for the research. While the vacuum being kept to work, we injected platinum organic compound ((CH3)3(CH3C5H4)Pt) into the sample neighborhood and irradiated the helium ion beam with the shape of a point on the apex of the AFM probe tip. It is found that we can control the length of the Pt nano-pillar by irradiation time of the helium ion beam. The AFM probe which brought up a Pt nano-pillar is shown in Figure 1. It is revealed that a high-aspect-ratio Pt nano-pillar of ∼40nm diameter and up to ∼2000 nm length can be grown. In addition, for possible heating

  9. Liquid phase deposition of polymers on arbitrary shaped surfaces and their suitability for e-beam patterning

    Energy Technology Data Exchange (ETDEWEB)

    Paeivaenranta, B; Leinonen, K; Kuittinen, M [University of Joensuu, Department of Physics and Mathematics, PO Box 111, FL-80101 Joensuu (Finland); Pudas, M; Pitkaenen, O [University of Oulu Microelectronics and Material Physics Laboratories and Empart Research Group of Infotech Oulu, Linnanmaa, PO Box 4500, FL-90014 Oulu (Finland); Baroni, P-Y; Scharf, T; Herzig, H-P [University of Neuchatel, Institute of MicroTechnology, A.-L. Breguet 2, 2000 Neuchatel (Switzerland)], E-mail: birgit.paivanranta@joensuu.fi

    2009-06-03

    We present a straightforward low cost liquid phase deposition method to coat arbitrary-shaped dielectric substrates with uniform electron beam sensitive polymer films. Furthermore, we investigate the use of electron beam lithography to pattern the coated pre-form substrates. The polymers studied are poly-methyl-methacrylate with different molecular weights, poly(methyl methacrylate-co-ethyl acrylate) and methyl methacrylate. The polymer coverage over the whole surface area is shown to be uniform and the thickness of the film dependent on the concentration of the polymer liquid used. As the uniform polymer layer is deposited on non-flat surfaces, we show that with an electron beam various surfaces, e.g. microlens arrays, can be re-patterned accurately with nanoscale features. Furthermore, we show the required dose for electron beam exposure to be dependent on the concentration and on the molecular weight of the polymer used.

  10. Beam assisted molecular rearrangement observed by TDPAD for fluorine complexes in diamond

    Science.gov (United States)

    Sideras-Haddad, E.; Connell, S. H.; Sellschop, J. P. F.; Bharuth-Ram, K.; Stemmet, M. C.; Naidoo, S.; Appel, H.

    1992-02-01

    Time dependent perturbed angular distribution (TDPAD) measurements have consistently revealed two unique sites for recoil implanted 19F in different types of natural diamonds. These correspond to quadrupole coupling constants of 63(2) and 56(2) MHz. The first corresponds to the formation of a C-F bond at an intrabond site and the second is interpreted as a distorted substitutional site. A third resolved coupling constant of 33(3) MHz is associated with a broadly distributed site with random electric field gradient orientation which might be indicative of local amorphous conditions and is interpreted as arising from the formation of H-F molecular complexes. A strong dependence on the incident proton dose of this fraction has been observed for all types of natural diamonds. A model proposed for such an effect involves a beam-assisted mechanism which accounts for disruption of existing hydrogenic molecular complexes and rearrangement of ions under the influence of intense electronic excitation caused by the incident proton beam. Such results give new insights on 19F as a TDPAD probe. Its small size and chemical affinity render it particularly appropriate for studies of molecular complexes with TDPAD.

  11. Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    The progress in the growth of nitride-based laser diodes (LDs) made by plasma-assisted molecular beam epitaxy (PAMBE) is reviewed. In this work we describe the GaN and InGaN growth peculiarities, p-type doping efficiency, and the properties of InGaN quantum wells (QWs) grown by PAMBE. We demonstrate continuous wave (cw) LDs operating in the range from 410 to 482 nm. These LDs were grown on low dislocation (0 0 0 1) c-plane bulk GaN substrate, which allow one to fabricate cw LDs with a lifetime exceeding 2000 h. Also, the ultraviolet LDs at 388 nm grown on (2 0 −2 1) semipolar substrates are discussed. The use of high active nitrogen fluxes up to 2 µm/h during the InGaN growth was essential for pushing the lasing wavelengths of PAMBE LDs above 460 nm. Recent advancement of InGaN growth by PAMBE allows one to demonstrate high-quality quantum QWs and excellent morphology for thick layers. We discuss the influence of LDs design on their parameters such as lasing threshold current and laser beam quality. (topical review)

  12. The role of low-energy electrons in focused electron beam induced deposition: four case studies of representative precursors

    Directory of Open Access Journals (Sweden)

    Rachel M. Thorman

    2015-09-01

    Full Text Available Focused electron beam induced deposition (FEBID is a single-step, direct-write nanofabrication technique capable of writing three-dimensional metal-containing nanoscale structures on surfaces using electron-induced reactions of organometallic precursors. Currently FEBID is, however, limited in resolution due to deposition outside the area of the primary electron beam and in metal purity due to incomplete precursor decomposition. Both limitations are likely in part caused by reactions of precursor molecules with low-energy (3, Pt(PF34, Co(CO3NO, and W(CO6. Through these case studies, it is evident that this combination of studies can provide valuable insight into potential mechanisms governing deposit formation in FEBID. Although further experiments and new approaches are needed, these studies are an important stepping-stone toward better understanding the fundamental physics behind the deposition process and establishing design criteria for optimized FEBID precursors.

  13. Low-temperature transport in ultra-thin tungsten films grown by focused-ion-beam deposition

    OpenAIRE

    Chiatti, O.; Warburton, P. A.

    2010-01-01

    We have fabricated tungsten-containing films by focused-ion-beam (FIB)-induced chemical vapour deposition. By using ion-beam doses below 50 pC/μm² on a substrate of amorphous silicon, we have grown continuous films with thickness below 20 nm. The low-temperature electron transport properties were investigated by measuring current-voltage characteristics for temperatures down to 400 mK and in magnetic fields up to 8 T. FIB-deposited tungsten films are known to have an enhanced transition tem­p...

  14. Characterisation of molecular thin films grown by organic molecular beam deposition

    CERN Document Server

    Bayliss, S M

    2000-01-01

    This work concerns the growth and characterisation of molecular thin films in an ultra high vacuum regime by organic molecular beam deposition (OMBD). Films of three different molecular materials are grown, namely free base phthalocyanine (H sub 2 Pc), perylene 3,4,9,10-tetracarboxylic dianhydride (PTCDA) and aluminium tris-8-hydroxyquinoline (Alq sub 3). The relationship between the growth parameters such as film thickness, growth rate, and substrate temperature during and after growth, and the structural, optical and morphological properties of the film are investigated. These investigations are carried out using various ex-situ techniques. X-ray diffraction, Raman spectroscopy and electronic absorption spectroscopy are used to probe the bulk film characteristics, whilst Nomarski microscopy and atomic force microscopy are used to study the surface morphology. Three different levels of influence of the growth parameters on the film properties are observed. In the case of H sub 2 Pc, two crystal phases are fo...

  15. Focused-electron-beam-induced-deposited cobalt nanopillars for nanomagnetic logic

    Science.gov (United States)

    Sharma, N.; van Mourik, R. A.; Yin, Y.; Koopmans, B.; Parkin, S. S. P.

    2016-04-01

    Nanomagnetic logic (NML) intends to alleviate problems of continued miniaturization of CMOS-based electronics, such as energy dissipation through heat, through advantages such as low power operation and non-volatile magnetic elements. In line with recent breakthroughs in NML with perpendicularly magnetized elements formed from thin films, we have fabricated NML inverter chains from Co nanopillars by focused electron beam induced deposition (FEBID) that exhibit shape-induced perpendicular magnetization. The flexibility of FEBID allows optimization of NML structures. Simulations reveal that the choice of nanopillar dimensions is critical to obtain the correct antiferromagnetically coupled configuration. Experiments carrying the array through a clocking cycle using the Oersted field from an integrated Cu wire show that the array responds to the clocking cycle.

  16. Focused-electron-beam-induced-deposited cobalt nanopillars for nanomagnetic logic.

    Science.gov (United States)

    Sharma, N; van Mourik, R A; Yin, Y; Koopmans, B; Parkin, S S P

    2016-04-22

    Nanomagnetic logic (NML) intends to alleviate problems of continued miniaturization of CMOS-based electronics, such as energy dissipation through heat, through advantages such as low power operation and non-volatile magnetic elements. In line with recent breakthroughs in NML with perpendicularly magnetized elements formed from thin films, we have fabricated NML inverter chains from Co nanopillars by focused electron beam induced deposition (FEBID) that exhibit shape-induced perpendicular magnetization. The flexibility of FEBID allows optimization of NML structures. Simulations reveal that the choice of nanopillar dimensions is critical to obtain the correct antiferromagnetically coupled configuration. Experiments carrying the array through a clocking cycle using the Oersted field from an integrated Cu wire show that the array responds to the clocking cycle. PMID:26941232

  17. Ultralight boron nitride aerogels via template-assisted chemical vapor deposition

    Science.gov (United States)

    Song, Yangxi; Li, Bin; Yang, Siwei; Ding, Guqiao; Zhang, Changrui; Xie, Xiaoming

    2015-05-01

    Boron nitride (BN) aerogels are porous materials with a continuous three-dimensional network structure. They are attracting increasing attention for a wide range of applications. Here, we report the template-assisted synthesis of BN aerogels by catalyst-free, low-pressure chemical vapor deposition on graphene-carbon nanotube composite aerogels using borazine as the B and N sources with a relatively low temperature of 900 °C. The three-dimensional structure of the BN aerogels was achieved through the structural design of carbon aerogel templates. The BN aerogels have an ultrahigh specific surface area, ultralow density, excellent oil absorbing ability, and high temperature oxidation resistance. The specific surface area of BN aerogels can reach up to 1051 m2 g-1, 2-3 times larger than the reported BN aerogels. The mass density can be as low as 0.6 mg cm-3, much lower than that of air. The BN aerogels exhibit high hydrophobic properties and can absorb up to 160 times their weight in oil. This is much higher than porous BN nanosheets reported previously. The BN aerogels can be restored for reuse after oil absorption simply by burning them in air. This is because of their high temperature oxidation resistance and suggests broad utility as water treatment tools.

  18. Ion beam assisted synthesis of nano-crystals in glasses (silver and lead chalcogenides)

    International Nuclear Information System (INIS)

    This work deals with the interest in ion beams for controlling nano-crystals synthesis in glasses. We show two different ways to reach this aim, insisting on importance of redox phenomena induced by the penetration and implantation of ions in glasses. We first show that we can use the great energy density deposited by the ions to tailor reducing conditions, favorable to metallic nano-crystal precipitation. In particular, we show that microscopic mechanism of radiation induced silver precipitation in glasses are analogous to the ones of classical photography. Ion beams can also be used to overcome supersaturation of elements in a given matrix. In this work, we synthesized lead chalcogenide nano-crystals (PbS, PbSe, PbTe) whose optical properties are interesting for telecommunication applications. We demonstrate the influence of complex chalcogenide chemistry in oxide glasses, and its relationship with the observed loss of growth control when nano-crystals are synthesized by sequential implantation of Pb and S in pure silica. As a consequence of this understanding, we demonstrate a novel and controlled synthesis of PbS nano-crystals, consisting in implanting sulfur into a Pb-containing glass, before annealing. Choice of glass composition provides a better control of precipitation physico-chemistry, whereas the use of implantation allows high nano-crystal volume fractions to be reached. Our study of IR emission properties of these nano-crystals shows a very high excitation cross section, and evidence for a 'dark exciton' emitting level. (author)

  19. Plasma-assisted molecular beam epitaxy of (11-22)-oriented 3-nitrides

    International Nuclear Information System (INIS)

    This work reports on the molecular-beam epitaxial growth of (1122)-oriented semi-polar nitride semiconductors using m-sapphire substrates. The (1122) crystallographic orientation is predefined by AlN deposition on m-sapphire under N excess. On top of this AlN buffer layer, undoped or Si-doped two-dimensional GaN(1122) films are formed under Ga-rich conditions, with a stabilized Ga-excess ad-layer of about 1.05±0.10 ML. In contrast, Mg tends to segregate on the GaN surface, inhibiting the self-regulated Ga excess film. Nevertheless, uniform Mg incorporation can be obtained, and p-type conductivity was achieved. GaN/AlN quantum wells are synthesized by deposition of the binary compounds under the above-described conditions. In the case of GaN/AlN quantum dots, the three-dimensional transition is induced by a growth interruption under vacuum. The reduction of the internal electric field in GaN/AlN nano-structures is confirmed by the blue shift of the photoluminescence spectrum and by the short photoluminescence decay times measured at low temperature. These results are consistent with theoretical calculations of the electronic structure. (author)

  20. Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition

    Institute of Scientific and Technical Information of China (English)

    Meiping Zhu; Kui Yi; Zhengxiu Fan; Jianda Shao

    2011-01-01

    @@ HfO2 and SiO2 single layer is deposited on glass substrate with plasma ion assistance provided by Leybold advanced plasma source (APS). The deposition is performed with a bias voltage in the range of 70-130 V for HfO2, and 70-170 V for SiO2. Optical, structural, mechanical properties, as well as absorption and laser induced damage threshold at 1064 nm of HfO2 and SiO2 single layer deposited with the plasma ion assistance are systematically investigated. With the increase of APS bias voltage, coatings with higher refractive index, reduced surface roughness, and higher laser-induced damage threshold (LIDT) are obtained, and no significant change of the absorption at 1064 nm is observed. For HfO2, a bias voltage can be identified to achieve coatings without any stress. However, too-high bias voltage can cause the increase of surface roughness and stress, and decrease the LIDT. The bias voltage can be properly identified to achieve coatings with desired properties.%HfO2 and SiO2 single layer is deposited on glass substrate with plasma ion assistance provided by Leybold advanced plasma source (APS). The deposition is performed with a bias voltage in the range of 70-130 V for HfO2, and 70-170 V for SiO2. Optical, structural, mechanical properties, as well as absorption and laser induced damage threshold at 1064 nm of HfO2 and SiO2 single layer deposited with the plasma ion assistance are systematically investigated. With the increase of APS bias voltage, coatings with higher refractive index, reduced surface roughness, and higher laser-induced damage threshold (LIDT) are obtained, and no significant change of the absorption at 1064 nm is observed. For HfO2, a bias voltage can be identified to achieve coatings without any stress. However, too-high bias voltage can cause the increase of surface roughness and stress, and decrease the LIDT. The bias voltage can be properly identified to achieve coatings with desired properties.

  1. Influence of deposition temperature on the microstructure and thermoelectric properties of antimonide cobalt thin films prepared by ion beam sputtering deposition

    International Nuclear Information System (INIS)

    Highlights: • Co–Sb films were prepared by ion beam sputtering using fan-shape target. • The carrier concentration is suitable for obtaining high-quality sample. • Co–Sb thin film with mixed CoSb3 and Sb phase has highest power factor. - Abstract: Antimonide cobalt thin films were deposited on BK7 glass substrates at various substrate temperatures by ion beam sputtering deposition with a fan-shape target. The influence of deposition temperature on the microstructure and thermoelectric properties of antimonide cobalt thin films were systematically investigated. It is found that the Seebeck coefficient of the thin film increases at first and then decreases with the increasing deposition temperature. The Seebeck coefficient of the sample deposited at 250 °C has maximum value and increases stably when the measuring temperature increased from room-temperature to 600 K. The electrical conductivity of the thin film increases significantly to 5.6 × 104 S cm−1 when the deposition temperature was 450 °C and then decreases greatly when the temperature increased to 500 °C and 550 °C. The behavior of electrical conductivity of the sample deposited at 250 °C changes from metallic to semiconducting after the measuring temperature exceeded 540 K. The power factor of antimonide cobalt thin film deposited at 250 °C has a maximum value of 0.93 × 10−4 W m−1 K−2 at room-temperature and then increases to 3.5 × 10−4 W m−1 K−2 when the measuring temperature was 540 K

  2. Electron-beam-induced deposition and post-treatment processes to locally generate clean titanium oxide nanostructures on Si(100)

    Science.gov (United States)

    Schirmer, M.; Walz, M.-M.; Vollnhals, F.; Lukasczyk, T.; Sandmann, A.; Chen, C.; Steinrück, H.-P.; Marbach, H.

    2011-02-01

    We have investigated the lithographic generation of TiOx nanostructures on Si(100) via electron-beam-induced deposition (EBID) of titanium tetraisopropoxide (TTIP) in ultra-high vacuum (UHV) by scanning electron microscopy (SEM) and local Auger electron spectroscopy (AES). In addition, the fabricated nanostructures were also characterized ex situ via atomic force microscopy (AFM) under ambient conditions. In EBID, a highly focused electron beam is used to locally decompose precursor molecules and thereby to generate a deposit. A drawback of this nanofabrication technique is the unintended deposition of material in the vicinity of the impact position of the primary electron beam due to so-called proximity effects. Herein, we present a post-treatment procedure to deplete the unintended deposits by moderate sputtering after the deposition process. Moreover, we were able to observe the formation of pure titanium oxide nanocrystals (<100 nm) in situ upon heating the sample in a well-defined oxygen atmosphere. While the nanocrystal growth for the as-deposited structures also occurs in the surroundings of the irradiated area due to proximity effects, it is limited to the pre-defined regions, if the sample was sputtered before heating the sample under oxygen atmosphere. The described two-step post-treatment procedure after EBID presents a new pathway for the fabrication of clean localized nanostructures.

  3. Electron-beam-induced deposition and post-treatment processes to locally generate clean titanium oxide nanostructures on Si(100)

    Energy Technology Data Exchange (ETDEWEB)

    Schirmer, M; Walz, M-M; Vollnhals, F; Lukasczyk, T; Sandmann, A; Steinrueck, H-P; Marbach, H [Lehrstuhl fuer Physikalische Chemie II and Interdisciplinary Center for Molecular Materials (ICMM), Universitaet Erlangen-Nuernberg, Egerlandstrasse 3, D-91058 Erlangen (Germany); Chen, C, E-mail: marbach@chemie.uni-erlangen.de [Department of Chemistry, Stanford University, Stanford, CA 94305 (United States)

    2011-02-25

    We have investigated the lithographic generation of TiO{sub x} nanostructures on Si(100) via electron-beam-induced deposition (EBID) of titanium tetraisopropoxide (TTIP) in ultra-high vacuum (UHV) by scanning electron microscopy (SEM) and local Auger electron spectroscopy (AES). In addition, the fabricated nanostructures were also characterized ex situ via atomic force microscopy (AFM) under ambient conditions. In EBID, a highly focused electron beam is used to locally decompose precursor molecules and thereby to generate a deposit. A drawback of this nanofabrication technique is the unintended deposition of material in the vicinity of the impact position of the primary electron beam due to so-called proximity effects. Herein, we present a post-treatment procedure to deplete the unintended deposits by moderate sputtering after the deposition process. Moreover, we were able to observe the formation of pure titanium oxide nanocrystals (<100 nm) in situ upon heating the sample in a well-defined oxygen atmosphere. While the nanocrystal growth for the as-deposited structures also occurs in the surroundings of the irradiated area due to proximity effects, it is limited to the pre-defined regions, if the sample was sputtered before heating the sample under oxygen atmosphere. The described two-step post-treatment procedure after EBID presents a new pathway for the fabrication of clean localized nanostructures.

  4. Closed-Loop Process Control for Electron Beam Freeform Fabrication and Deposition Processes

    Science.gov (United States)

    Taminger, Karen M. (Inventor); Hafley, Robert A. (Inventor); Martin, Richard E. (Inventor); Hofmeister, William H. (Inventor)

    2013-01-01

    A closed-loop control method for an electron beam freeform fabrication (EBF(sup 3)) process includes detecting a feature of interest during the process using a sensor(s), continuously evaluating the feature of interest to determine, in real time, a change occurring therein, and automatically modifying control parameters to control the EBF(sup 3) process. An apparatus provides closed-loop control method of the process, and includes an electron gun for generating an electron beam, a wire feeder for feeding a wire toward a substrate, wherein the wire is melted and progressively deposited in layers onto the substrate, a sensor(s), and a host machine. The sensor(s) measure the feature of interest during the process, and the host machine continuously evaluates the feature of interest to determine, in real time, a change occurring therein. The host machine automatically modifies control parameters to the EBF(sup 3) apparatus to control the EBF(sup 3) process in a closed-loop manner.

  5. Dual-ion-beam deposition of carbon films with diamond-like properties

    Science.gov (United States)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1985-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamond like films generated by sputtering a graphite target.

  6. Microstructural Characterization of Au-In Thin Film Deposited by Electron Beam Evaporation

    International Nuclear Information System (INIS)

    The microstructure and phase formation of Au-In thin film deposited by e-beam evaporation technique has been studied. Single crystals of rock salt were used as the substrates. The chamber pressure during deposition was about 2.5 x 10-5 torr and substrate temperature was 35 degree Celsius. Three types of samples were prepared namely Au, In and Au-In thin films. Microstructure and chemical composition of these thin films were characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectrometer (XPS) respectively. TEM micrograph reveals island structures for both Au and In thin film on the rock salt substrate, with the In island size distribution is about 9-30 nm compared to Au island in the range of 3-10 nm. The growth of islands instead of smooth film indicates that Au and In thin films follow the Volmer-Weber growth mode. However, island structures were not present on Au-In thin films which most probably follow the Frank van de Merwe growth mode. XPS analysis indicates intermetallic compound was not present in the Au-In thin film suggesting that diffusion process in the interface of Au and In films is minimal. (author)

  7. Structural and electrical properties of ion beam sputter deposited tantalum films

    Energy Technology Data Exchange (ETDEWEB)

    Sajovec, F.; Meuffels, P.M.; Schober, T. (Forschungszentrum Juelich G.m.b.H., Inst. fuer Festkoerperforschung, Juelich (Germany))

    1992-10-30

    In situ resistance measurements during the growth of ion beam sputter deposited tantalum films have been employed to elucidate the conditions necessary for the formation of either the b.c.c. ([alpha]-Ta) or the tetragonal ([beta]-Ta) structure. Tantalum films condense at room temperature onto sputter-cleaned fused silica substrates as the [beta] phase with resistivities [rho] in the range 200-220 [mu][Omega] cm. [alpha]-Ta films with [rho] between 40 and 55 [mu][Omega] cm can be prepared if the films are deposited on top of thin (more than 3 nm) niobium underlayers. The niobium underlayer thickness is very critical with respect to the nucleation process of tantalum. When it is less than 3 nm, tantalum films consisting of mixtures of [alpha]-Ta and [beta]-Ta result. This is because niobium on fused silica nucleates first in a structure differing from the common b.c.c. structure. This phase cannot promote the nucleation of pure [alpha]-Ta. It converts to b.c.c.-Nb if the layer thickness exceeds 3 nm.

  8. Post-growth purification of Co nanostructures prepared by focused electron beam induced deposition

    Science.gov (United States)

    Begun, E.; Dobrovolskiy, O. V.; Kompaniiets, M.; Sachser, R.; Gspan, Ch; Plank, H.; Huth, M.

    2015-02-01

    In the majority of cases nanostructures prepared by focused electron beam induced deposition (FEBID) employing an organometallic precursor contain predominantly carbon-based ligand dissociation products. This is unfortunate with regard to using this high-resolution direct-write approach for the preparation of nanostructures for various fields, such as mesoscopic physics, micromagnetism, electronic correlations, spin-dependent transport and numerous applications. Here we present an in situ cleaning approach to obtain pure Co-FEBID nanostructures. The purification procedure lies in the exposure of heated samples to a H2 atmosphere in conjunction with the irradiation by low-energy electrons. The key finding is that the combination of annealing at 300 °C, H2 exposure and electron irradiation leads to compact, carbon- and oxygen free Co layers down to a thickness of about 20 nm starting from as-deposited Co-FEBID structures. In addition to this, in temperature-dependent electrical resistance measurements on post-processed samples we find a typical metallic behavior. In low-temperature magnetoresistance and Hall effect measurements we observe ferromagnetic behavior.

  9. Reduced thermal budget processing of Y-Ba-Cu-O films by rapid isothermal processing assisted metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Metalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a viable technique to fabricate ribbons, tapes, coated wires, and the deposition of films of high-temperature superconductors, and related materials. As a reduced thermal budget processing technique, rapid isothermal processing (RIP) based on incoherent radiation as the source of energy can be usefully coupled to conventional MOCVD. In this paper we report on the deposition and characterization of high quality superconducting thin films of Y-Ba-Cu-O (YBCO) on yttrium stabilized zirconia substrates by RIP assisted MOCVD. Using O2 gas as the source of oxygen, YBCO films deposited initially at 600 degree C for 1 min and at 745 degree C for 25 min followed by deposition at 780 degree C for 45 s are primarily c-axis oriented and zero resistance is observed at 89--90 K. The zero magnetic field current density at 53 and 77 K are 1.2x106 and 3x105 A/cm2, respectively. By using a mixture of N2O and O2 as the oxygen source substrate temperature was further reduced in the deposition of YBCO films. The films deposited initially at 600 degree C for 1 min and than at 720 degree C for 30 min are c-axis oriented and with zero resistance being observed at 91 K. The zero magnetic field current densities at 53 and 77 K are 3.4x106 and 1.2x106 A/cm2, respectively. To the best of our knowledge this is the highest value of critical current density, Jc for films deposited by MOCVD at a substrate temperature as low as 720 degree C. It is envisioned that high energy photons from the incoherent light source and the use of a mixture of N2O and O2 as the oxygen source, assist chemical reactions and lower overall thermal budget for processing of these films

  10. Formation of SiC Nanostruture Using Hexamethyldisiloxane During Plasma-Assisted Hot-Filament Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    Growth of SiC nanowires in plasma-assisted hot filament chemical-vapor-deposition by using hexamethyldisiloxane (HMDSO) as the gas source is reported. The SiC nanowires (SiC-NWs) grew on Au-coated silicon substrate with core-shell structure, where the core consisted of polycrystalline SiC grains and the shell exhibited amorphous structure. The featured structures such as cones, polyhedrons, ball-liked particles were observed in the case without plasma assistance. The underlying mechanism for the growth of nanostructures was also discussed. The high chemical activity induced by the plasma process plays an important role in using monomer to generate nanostructure.

  11. Chemical composition, morphology and optical properties of zinc sulfide coatings deposited by low-energy electron beam evaporation

    International Nuclear Information System (INIS)

    The research determines the features of formation, morphology, chemical composition and optical properties of the coatings deposited by the method, proposed for the first time, of the exposure of mechanical mixture of zinc and sulfur powders to low-energy electron beam evaporation. The findings show that the deposited coatings are characterized by high chemical and structural homogeneity in thickness. The study considers the influence of substrate temperature and thickness of the deposited layer on the morphology and the width of the formed ZnS thin layers band gap. Also was shown the possibility to form ZnS coatings with this method using the mixture of zinc and copper sulfide powders.

  12. Chemical composition, morphology and optical properties of zinc sulfide coatings deposited by low-energy electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Ragachev, A.V. [International Chinese-Belorussian scientific laboratory on vacuum-plasma technology, College of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Francisk Skorina Gomel State University, 104, Sovetskaya Street, Gomel 246019 (Belarus); Yarmolenko, M.A., E-mail: simmak79@mail.ru [International Chinese-Belorussian scientific laboratory on vacuum-plasma technology, College of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Francisk Skorina Gomel State University, 104, Sovetskaya Street, Gomel 246019 (Belarus); Rogachev, A.A. [International Chinese-Belorussian scientific laboratory on vacuum-plasma technology, College of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Francisk Skorina Gomel State University, 104, Sovetskaya Street, Gomel 246019 (Belarus); Gorbachev, D.L. [Francisk Skorina Gomel State University, 104, Sovetskaya Street, Gomel 246019 (Belarus); Zhou, Bing [International Chinese-Belorussian scientific laboratory on vacuum-plasma technology, College of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China)

    2014-06-01

    The research determines the features of formation, morphology, chemical composition and optical properties of the coatings deposited by the method, proposed for the first time, of the exposure of mechanical mixture of zinc and sulfur powders to low-energy electron beam evaporation. The findings show that the deposited coatings are characterized by high chemical and structural homogeneity in thickness. The study considers the influence of substrate temperature and thickness of the deposited layer on the morphology and the width of the formed ZnS thin layers band gap. Also was shown the possibility to form ZnS coatings with this method using the mixture of zinc and copper sulfide powders.

  13. Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films

    International Nuclear Information System (INIS)

    Without extra heating, Al2O3 thin films were deposited on a hydrogen-terminated Si substrate etched in hydrofluoric acid by using a self-built electron cyclotron resonance (ECR) plasma-assisted atomic layer deposition (ALD) device with Al(CH3)3 (trimethylaluminum; TMA) and O2 used as precursor and oxidant, respectively. During the deposition process, Ar was introduced as a carrier and purging gas. The chemical composition and microstructure of the as-deposited Al2O3 films were characterized by using X-ray diffraction (XRD), an X-ray photoelectric spectroscope (XPS), a scanning electron microscope (SEM), an atomic force microscope (AFM) and a high-resolution transmission electron microscope (HRTEM). It achieved a growth rate of 0.24 nm/cycle, which is much higher than that deposited by thermal ALD. It was found that the smooth surface thin film was amorphous alumina, and an interfacial layer formed with a thickness of ca. 2 nm was observed between the Al2O3 film and substrate Si by HRTEM. We conclude that ECR plasma-assisted ALD can grow Al2O3 films with an excellent quality at a high growth rate at ambient temperature.

  14. Computational study of transport and energy deposition of intense laser-accelerated proton beams in solid density matter

    Science.gov (United States)

    Kim, J.; McGuffey, C.; Qiao, B.; Beg, F. N.; Wei, M. S.; Grabowski, P. E.

    2015-11-01

    With intense proton beams accelerated by high power short pulse lasers, solid targets are isochorically heated to become partially-ionized warm or hot dense matter. In this regime, the thermodynamic state of the matter significantly changes, varying the proton stopping power where both bound and free electrons contribute. Additionally, collective beam-matter interaction becomes important to the beam transport. We present self-consistent hybrid particle-in-cell (PIC) simulation results of proton beam transport and energy deposition in solid-density matter, where the individual proton stopping and the collective effects are taken into account simultaneously with updates of stopping power in the varying target conditions and kinetic motions of the beam in the driven fields. Broadening of propagation range and self-focusing of the beam led to unexpected target heating by the intense proton beams, with dependence on the beam profiles and target conditions. The behavior is specifically studied for the case of an experimentally measured proton beam from the 1.25 kJ, 10 ps OMEGA EP laser transporting through metal foils. This work was supported by the U.S. DOE under Contracts No. DE-NA0002034 and No. DE-AC52-07NA27344 and by the U.S. AFOSR under Contract FA9550-14-1-0346.

  15. Study on absorbance and laser damage threshold of HfO2 films prepared by ion-assisted reaction deposition

    Institute of Scientific and Technical Information of China (English)

    张大伟; 范树海; 高卫东; 贺洪波; 王英剑; 邵建达; 范正修; 孙浩杰

    2004-01-01

    Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different depo sition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold.

  16. Nanoparticulate cerium dioxide and cerium dioxide-titanium dioxide composite thin films on glass by aerosol assisted chemical vapour deposition

    International Nuclear Information System (INIS)

    Two series of composite thin films were deposited on glass by aerosol assisted chemical vapour deposition (AACVD)-nanoparticulate cerium dioxide and nanoparticulate cerium dioxide embedded in a titanium dioxide matrix. The films were analysed by a range of techniques including UV-visible absorption spectroscopy, X-ray diffraction, scanning electron microscopy and energy dispersive analysis by X-rays. The AACVD prepared films showed the functional properties of photocatalysis and super-hydrophilicity. The CeO2 nanoparticle thin films displaying photocatalysis and photo-induced hydrophilicity almost comparable to that of anatase titania.

  17. Structural and growth aspects of electron beam physical vapor deposited NiO-CeO2 nanocomposite films

    International Nuclear Information System (INIS)

    Deposition of composite materials as thin film by electron beam physical vapor deposition technique (EB-PVD) still remains as a challenge. Here, the authors report the deposition of NiO-CeO2 (30/70 wt. %) composites on quartz substrate by EB-PVD. Two NiO-CeO2 nanocomposite targets—one as green compact and the other after sintering at 1250 °C—were used for the deposition. Though the targets varied with respect to physical properties such as crystallite size (11–45 nm) and relative density (44% and 96%), the resultant thin films exhibited a mean crystallite size in the range of 20–25 nm underlining the role of physical nature of deposition. In spite of the crystalline nature of the targets and similar elemental concentration, a transformation from amorphous to crystalline structure was observed in thin films on using sintered target. Postannealing of the as deposited film at 800 °C resulted in a polycrystalline structure consisting of CeO2 and NiO. Deposition using pure CeO2 or NiO as target resulted in the preferential orientation toward (111) and (200) planes, respectively, showing the influence of adatoms on the evaporation and growth process of NiO-CeO2 composite. The results demonstrate the influence of electron beam gun power on the adatom energy for the growth process of composite oxide thin films

  18. Fabrication of speckle patterns by focused ion beam deposition and its application to micro-scale residual stress measurement

    Science.gov (United States)

    Zhu, Ronghua; Xie, Huimin; Xue, Yunfei; Wang, Liang; Li, YanJie

    2015-09-01

    This paper deals with the characterization of influence parameters on the fabrication of speckle patterns using FIB deposition. In many manufacturing processes the presence of residual stress is disturbing, and can significantly affect the mechanical properties of materials and structures. Digital image correlation (DIC) is validated to be an effective approach for the determination of micro-scale residual stress under the dual-beam microscope (FIB-EB). Considering the high-quality micro-scale speckle pattern is the prerequisite in DIC measurement, the influence parameters on the deposited speckle patterns, such as the quality of the speckle template, total deposition time, ion beam current density, and dwell time, are primarily discussed. Moreover, in the measurement of residual stress, the integrated fabrication technique under the FIB-EB dual-beam system is also explained, covering the following steps: fabrication of the speckle pattern by FIB deposition, slot milling for stress release by FIB, high-resolution SEM imaging before and after stress release as well as the deformation analysis by DIC. As application, the optimized micro-scale speckle patterns are deposited on the surface of laser shock peened metallic glass, and the residual stress distribution on the sample surface is successfully measured.

  19. Development of a high magnetic field assisted pulsed laser deposition system

    Science.gov (United States)

    Zhang, Kejun; Dai, Jianming; Wu, Wenbin; Zhang, Peng; Zuo, Xuzhong; Zhou, Shu; Zhu, Xuebin; Sheng, Zhigao; Liang, Changhao; Sun, Yuping

    2015-09-01

    A high magnetic field assisted pulsed laser deposition (HMF-PLD) system has been developed to in situ grow thin films in a high magnetic field up to 10 T. In this system, a specially designed PLD cylindrical vacuum chamber is horizontally located in the bore configuration of a superconducting magnet with a bore diameter of 200 mm. To adjust the focused pulsed laser into the target in such a narrow PLD vacuum chamber, an ingeniously built-in laser leading-in chamber is employed, including a laser mirror with a reflection angle of 65° and a damage threshold up to 3.4 J/cm2. A laser alignment system consisting of a built-in video-unit leading-in chamber and a low-energy alignment laser is applied to monitor and align the pulsed laser propagation in the PLD vacuum chamber. We have grown La0.7Sr0.3MnO3 (LSMO) thin films on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) [LSAT (001)] substrates by HMF-PLD. The results show that the nanostructures of the LSMO films can be tuned from an epitaxially continuous film structure without field to a vertically aligned nanorod structure with an applied high magnetic field above 5 T, and the dimension size of the nanorods can be tuned by the strength of the magnetic field. The associated magnetic anisotropy is found to be highly dependent on the nanorod structures. We show how the HMF-PLD provides an effective route toward tuning the nanostructures and the physical properties of functional thin films, giving it an important role in development of nanodevices and their application.

  20. Nanoscale coatings of tungsten by radio frequency plasma assisted chemical vapor deposition on graphite

    International Nuclear Information System (INIS)

    Future thermonuclear fusion reactors including ITER are heading towards full scale operations with tungsten being the material for the divertor, limiter and probably the first wall too. Tungsten has several superior properties over its low Z competitors in terms of higher melting point, lower sputtering yield, low fuel retention (D - T) etc. So far, fusion experimentalists have gained enough experience and have rich databases with carbon as its first wall as well as target materials in tokamaks. However, database for tungsten line radiation in variety of plasmas i.e. basic laboratory scale to high density and high temperature plasmas is rare and this requires immediate attention to construct a database with experimental evidences. Such studies are not limited to only large scale fusion reactors but small and medium scale toroidally confined devices can be suitably utilized. Present day tokamaks are now switching to plasma facing components made up of tungsten. As the complete replacement of the wall and target materials from carbon to tungsten in existing tokamaks is challenging and time consuming exercise, tungsten coatings on selected target materials remains a very feasible option for the purpose. This paper will present the development of indigenous tungsten coating reactor which has successfully produced tungsten coated graphite tiles of sample dimensions. The tungsten coated graphite tiles are produced by RF plasma assisted chemical vapor deposition of tungsten on graphite substrates. The RF plasma is produced with 60 - 100 W power and tungsten nano ions are produced by dissociating the precursor gas tungsten hexa-fluoride (WF6) in sufficient hydrogen background. Further, challenges in handling WF6 plasma at high pressures and in-situ spectroscopy results during the coating process will be presented. (author)

  1. Fabrication of three-dimensional scaffolds using precision extrusion deposition with an assisted cooling device

    Energy Technology Data Exchange (ETDEWEB)

    Hamid, Q; Snyder, J; Wang, C; Guceri, S; Sun, W [Department of Mechanical Engineering and Mechanics, Drexel University, Philadelphia, PA (United States); Timmer, M; Hammer, J, E-mail: sunwei@drexel.edu [Advanced Technologies and Regenerative Medicine, Somerville, NJ (United States)

    2011-09-15

    In the field of biofabrication, tissue engineering and regenerative medicine, there are many methodologies to fabricate a building block (scaffold) which is unique to the target tissue or organ that facilitates cell growth, attachment, proliferation and/or differentiation. Currently, there are many techniques that fabricate three-dimensional scaffolds; however, there are advantages, limitations and specific tissue focuses of each fabrication technique. The focus of this initiative is to utilize an existing technique and expand the library of biomaterials which can be utilized to fabricate three-dimensional scaffolds rather than focusing on a new fabrication technique. An expanded library of biomaterials will enable the precision extrusion deposition (PED) device to construct three-dimensional scaffolds with enhanced biological, chemical and mechanical cues that will benefit tissue generation. Computer-aided motion and extrusion drive the PED to precisely fabricate micro-scaled scaffolds with biologically inspired, porosity, interconnectivity and internal and external architectures. The high printing resolution, precision and controllability of the PED allow for closer mimicry of tissues and organs. The PED expands its library of biopolymers by introducing an assisting cooling (AC) device which increases the working extrusion temperature from 120 to 250 deg. C. This paper investigates the PED with the integrated AC's capabilities to fabricate three-dimensional scaffolds that support cell growth, attachment and proliferation. Studies carried out in this paper utilized a biopolymer whose melting point is established to be 200 deg. C. This polymer was selected to illustrate the newly developed device's ability to fabricate three-dimensional scaffolds from a new library of biopolymers. Three-dimensional scaffolds fabricated with the integrated AC device should illustrate structural integrity and ability to support cell attachment and proliferation.

  2. New Target Methodology: Polymer-Assisted Deposition and Its Applications on Gas-Phase Nuclear Chemistry with Rutherfordium

    OpenAIRE

    Garcia, Mitch Andre

    2009-01-01

    This work focuses on three research topics that were distinctly different but broadly centered around developing new methods to perform transactinide gas-phase chemistry. First, the application of a new materials science methodology, Polymer-Assisted Deposition (PAD), to target manufacturing is described. Second, the construction of a new experimental apparatus to conduct gas-phase chemistry and the design of circuits and electronics for the measurement of alpha-decay energy is discussed. Thi...

  3. Customized atomic force microscopy probe by focused-ion-beam-assisted tip transfer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Andrew; Butte, Manish J., E-mail: manish.butte@stanford.edu [Department of Pediatrics, Division of Immunology, Allergy and Rheumatology, Stanford University, Stanford, California 94305 (United States)

    2014-08-04

    We present a technique for transferring separately fabricated tips onto tipless atomic force microscopy (AFM) cantilevers, performed using focused ion beam-assisted nanomanipulation. This method addresses the need in scanning probe microscopy for certain tip geometries that cannot be achieved by conventional lithography. For example, in probing complex layered materials or tall biological cells using AFM, a tall tip with a high-aspect-ratio is required to avoid artifacts caused by collisions of the tip's sides with the material being probed. We show experimentally that tall (18 μm) cantilever tips fabricated by this approach reduce squeeze-film damping, which fits predictions from hydrodynamic theory, and results in an increased quality factor (Q) of the fundamental flexural mode. We demonstrate that a customized tip's well-defined geometry, tall tip height, and aspect ratio enable improved measurement of elastic moduli by allowing access to low-laying portions of tall cells (T lymphocytes). This technique can be generally used to attach tips to any micromechanical device when conventional lithography of tips cannot be accomplished.

  4. Development of computer assisted learning program using cone beam projection for head radiography

    International Nuclear Information System (INIS)

    We present a computer assisted learning (CAL) program to simulate head radiography. The program provides cone beam projections of a target volume, simulating three-dimensional computed tomography (CT) of a head phantom. The generated image is 512 x 512 x 512 pixels with each pixel 0.6 mm on a side. The imaging geometry, such as X-ray tube orientation and phantom orientation, can be varied. The graphical user interface (GUI) of the CAL program allows the study of the effects of varying the imaging geometry; each simulated projection image is shown quickly in an adjoining window. Simulated images with an assigned geometry were compared with the image obtained using the standard geometry in clinical use. The accuracy of the simulated image was verified through comparison with the image acquired using radiography of the head phantom, subsequently processed with a computed radiography system (CR image). Based on correlation coefficient analysis and visual assessment, it was concluded that the CAL program can satisfactorily simulate the CR image. Therefore, it should be useful for the training of head radiography. (author)

  5. High-purity 3D nano-objects grown by focused-electron-beam induced deposition

    Science.gov (United States)

    Córdoba, Rosa; Sharma, Nidhi; Kölling, Sebastian; Koenraad, Paul M.; Koopmans, Bert

    2016-09-01

    To increase the efficiency of current electronics, a specific challenge for the next generation of memory, sensing and logic devices is to find suitable strategies to move from two- to three-dimensional (3D) architectures. However, the creation of real 3D nano-objects is not trivial. Emerging non-conventional nanofabrication tools are required for this purpose. One attractive method is focused-electron-beam induced deposition (FEBID), a direct-write process of 3D nano-objects. Here, we grow 3D iron and cobalt nanopillars by FEBID using diiron nonacarbonyl Fe2(CO)9, and dicobalt octacarbonyl Co2(CO)8, respectively, as starting materials. In addition, we systematically study the composition of these nanopillars at the sub-nanometer scale by atom probe tomography, explicitly mapping the homogeneity of the radial and longitudinal composition distributions. We show a way of fabricating high-purity 3D vertical nanostructures of ∼50 nm in diameter and a few micrometers in length. Our results suggest that the purity of such 3D nanoelements (above 90 at% Fe and above 95 at% Co) is directly linked to their growth regime, in which the selected deposition conditions are crucial for the final quality of the nanostructure. Moreover, we demonstrate that FEBID and the proposed characterization technique not only allow for growth and chemical analysis of single-element structures, but also offers a new way to directly study 3D core–shell architectures. This straightforward concept could establish a promising route to the design of 3D elements for future nano-electronic devices.

  6. High-purity 3D nano-objects grown by focused-electron-beam induced deposition.

    Science.gov (United States)

    Córdoba, Rosa; Sharma, Nidhi; Kölling, Sebastian; Koenraad, Paul M; Koopmans, Bert

    2016-09-01

    To increase the efficiency of current electronics, a specific challenge for the next generation of memory, sensing and logic devices is to find suitable strategies to move from two- to three-dimensional (3D) architectures. However, the creation of real 3D nano-objects is not trivial. Emerging non-conventional nanofabrication tools are required for this purpose. One attractive method is focused-electron-beam induced deposition (FEBID), a direct-write process of 3D nano-objects. Here, we grow 3D iron and cobalt nanopillars by FEBID using diiron nonacarbonyl Fe2(CO)9, and dicobalt octacarbonyl Co2(CO)8, respectively, as starting materials. In addition, we systematically study the composition of these nanopillars at the sub-nanometer scale by atom probe tomography, explicitly mapping the homogeneity of the radial and longitudinal composition distributions. We show a way of fabricating high-purity 3D vertical nanostructures of ∼50 nm in diameter and a few micrometers in length. Our results suggest that the purity of such 3D nanoelements (above 90 at% Fe and above 95 at% Co) is directly linked to their growth regime, in which the selected deposition conditions are crucial for the final quality of the nanostructure. Moreover, we demonstrate that FEBID and the proposed characterization technique not only allow for growth and chemical analysis of single-element structures, but also offers a new way to directly study 3D core-shell architectures. This straightforward concept could establish a promising route to the design of 3D elements for future nano-electronic devices. PMID:27454835

  7. Structure and electrical properties of quaternary Cr–Si–Ni–W films prepared by ion beam sputter deposition

    International Nuclear Information System (INIS)

    Highlights: • Quaternary Cr–Si–Ni–W thin film was prepared by IBSD. • As-deposited Cr–Si–Ni–W films show nanocrystalline state in XRD analysis. • Big massive particles in Cr–Si–Ni–W films are mainly formed in deposition process. • Conduction mechanism was discussed based on microscopic analysis. - Abstract: Si-rich Cr–Si–Ni–W films were deposited by ion beam sputter deposition (IBSD) using a mother alloy target on polished Al2O3 substrates. Effects of ion beam voltage, annealing temperature and deposition time on sheet resistance and TCR of Cr–Si–Ni–W films were studied. Experimental results reveal that the as-deposited Cr–Si–Ni–W films obtained by IBSD show a crystalline state because of a high mobility of deposition atoms and molecules with more energy obtained from high energy ions. XRD and AFM analysis show that the big massive particles mainly composed of Si and CrSi2 in Cr–Si–Ni–W films are formed in the process of IBSD rather than in post-annealing stage. Long deposition time is significantly important to a decrease of the number and size of gaps between big particles in Cr–Si–Ni–W films and to an improvement of the continuity and compactness of film structure, influencing resistivity and TCR of deposition film. The conduction mechanism was discussed based on microscopic analysis and the conductive model proposed for Cr–Si–Ni–W films mainly composed of big particles

  8. Pitting resistance of TiN deposited on Inconel 600 by plasma-assisted chemical vapor deposition

    International Nuclear Information System (INIS)

    TiN films were deposited on Inconel 600 by PACVD using the gaseous mixture of TiCl4, N2, H2, and Ar in order to increase the pitting resistance of Inconel 600. The pitting resistance was examined using a potentiodynamic polarization technique with a chloride solution. The effect of chloride concentration in the electrolyte on the pitting potential was also investigated. Inconel 600 coated with TiN film shows a superior pitting resistance to that without TiN film in condition that the thickness of the film is greater than a certain critical value. As the deposition temperature as well as the RF power increases, the residual Cl concentration in the film decreases, resulting in the improvement of the pitting resistance. However, the TiN films deposited at too high RF powers, even though the Cl concentration in TiN film is very small, show inferior pitting resistance, which is due to the formation of the network type microvoids structure. ((orig.))

  9. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    International Nuclear Information System (INIS)

    The requirements on the material properties and growth control of silicon nitride (SiNx) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiNx by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiNx by plasma-assisted ALD and that this parameter can be linked to a so-called “redeposition effect”. This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiNx ALD using SiH2(NHtBu)2 as precursor and N2 plasma as reactant, the gas residence time τ was found to determine both SiNx film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes

  10. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    Science.gov (United States)

    Knoops, Harm C. M.; de Peuter, K.; Kessels, W. M. M.

    2015-07-01

    The requirements on the material properties and growth control of silicon nitride (SiNx) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiNx by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiNx by plasma-assisted ALD and that this parameter can be linked to a so-called "redeposition effect". This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiNx ALD using SiH2(NHtBu)2 as precursor and N2 plasma as reactant, the gas residence time τ was found to determine both SiNx film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.

  11. Influence of Increasing Deposition Temperature on Electrical Properties of Amorphous Carbon Thin Film Prepared by Aerosol-Assisted Thermal CVD

    International Nuclear Information System (INIS)

    This paper reports on the successful deposition of p-type semiconducting amorphous carbon (paC) films fabricated onto the glass substrate by Aerosol-Assisted Thermal Chemical Vapor Deposition (CVD) using natural source of camphor oil as the precursor material. The analyze reveal that conductivity and resistivity shows some changes at different deposition temperature, that is the conductivity increase as temperature increase from 350 to 550 degree Celsius, but drop slightly at 550 degree Celsius. Other than that, optical and structural properties were also characterized by using UV-VIS-NIR system and Atomic Force Microscopy. The same trend of optical and electrical can be seen when the measurement from the Taucs plot expose a decreasing value of optical band gap as temperature increase, but slightly increase when temperature increase to 550 degree Celsius. (author)

  12. Aerosol assisted chemical vapour deposition of germanium thin films using organogermanium carboxylates as precursors and formation of germania films

    Indian Academy of Sciences (India)

    Alpa Y Shah; Amey Wadawale; Vijaykumar S Sagoria; Vimal K Jain; C A Betty; S Bhattacharya

    2012-06-01

    Diethyl germanium bis-picolinate, [Et2Ge(O2CC5H4N)2], and trimethyl germanium quinaldate, [Me3Ge(O2CC9H6N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of complexes under nitrogen atmosphere. Germanium thin films were deposited on silicon wafers at 700°C employing AACVD method. These films on oxidation under an oxygen atmosphere at 600°C yield GeO2. Both Ge and GeO2 films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by current–voltage (–) characterization.

  13. Characteristics and properties of metal aluminum thin films prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology

    Institute of Scientific and Technical Information of China (English)

    Xiong Yu-Qing; Li Xing-Cun; Chen Qiang; Lei Wen-Wen; Zhao Qiao; Sang Li-Jun; Liu Zhong-Wei; Wang Zheng-Duo; Yang Li-Zhen

    2012-01-01

    Metal aluminum (Al) thin films are prepared by 2450 MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas.We focus our attention on the plasma source for the thin-film preparation and annealing of the as-deposited films relative to the surface square resistivity.The square resistivity of as-deposited Al films is greatly reduced after annealing and almost reaches the value of bulk metal.Through chemical and structural analysis,we conclude that the square resistivity is determined by neither the contaminant concentration nor the surface morphology,but by both the crystallinity and crystal size in this process.

  14. A new approach for 3D reconstruction from bright field TEM imaging: Beam precession assisted electron tomography

    International Nuclear Information System (INIS)

    The successful combination of electron beam precession and bright field electron tomography for 3D reconstruction is reported. Beam precession is demonstrated to be a powerful technique to reduce the contrast artifacts due to diffraction and curvature in thin foils. Taking advantage of these benefits, Precession assisted electron tomography has been applied to reconstruct the morphology of Sn precipitates embedded in an Al matrix, from a tilt series acquired in a range from +49o to -61o at intervals of 2o and with a precession angle of 0.6o in bright field mode. The combination of electron tomography and beam precession in conventional TEM mode is proposed as an alternative procedure to obtain 3D reconstructions of nano-objects without a scanning system or a high angle annular dark field detector. -- Highlights: → Electron beam precession reduces spurious diffraction contrast in bright field mode. → Bend contour related contrast depends on precession angle. → Electron beam precession is combined with bright field electron tomography. → Precession assisted BF tomography allowed 3D reconstruction of a Sn precipitate.

  15. Effect of deposition distance on thickness and microstructure of silicon thin film produced by electron beam evaporation; Efeito da distancia de deposicao na espessura e microestrutura de filme fino obtido por evaporacao por feixe de eletrons

    Energy Technology Data Exchange (ETDEWEB)

    Toledo, T.F.; Ramanery, F.P.; Branco, J.R.T. [Fundacao Centro Tecnologico de Minas Gerais, Belo Horizonte, MG (Brazil)], e-mail: thalitaqui@yahoo.com.br; Cunha, M.A. [Acos Especiais Itabira S.A. (Acesita), Belo Horizonte, MG (Brazil)

    2006-07-01

    The interest for materials with new characteristics and properties made thin films an area of highest research interest. Silicon thin films have been widely used in solar cells, being the main active layer. In this work, the effect of deposition distance on thickness and microstructure of silicon films was investigated. The electron beam evaporation technique with argon plasma assistance was used to obtain films on stainless steel 304, Fe-Si alloy and soda lime glass. The experiments were made varying electron beam current and deposition pressure. The results are discussed based on Hertz-Knudsen's law and thin films microstructure evolution models. The samples were characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction and profilometer. (author)

  16. Surfactant assisted ion beam erosion of GaN and AlN surfaces

    International Nuclear Information System (INIS)

    We investigate the evolution of the surface morphology of AlN and GaN surfaces during ion beam erosion. AlN and GaN films grown on sapphire substrates were irradiated at room temperature with few keV Xe ions at normal ion incidence with ion fluences up to 4.1017 cm-2. The surface morphology was analyzed using atomic force microscopy and scanning electron microscopy. For GaN selective sputtering causes segregation of Ga on the surface, resulting in a dense coverage with small spherical Ga droplets. With increasing ion fluence the droplet size increases. The Ga coverage was quantitatively analyzed with SEM and Rutherford backscattering. For AlN, the rms roughness of the surface decreases with increasing ion fluence from initially 8 nm to about 3 nm at 4.1017 cm-2. No ripple or dot patterns were observed. Sputtering of AlN with simultaneous co-deposition of Ga, results in the formation of randomly distributed small Ga droplets and Al0.8Ga0.2 islands of few nm in size on the AlN surface. The rms roughness of such a surface is only about 1.3 nm. The density of droplets and islands decreases with increasing ion fluence. In the intermediate regions the AlN surface appears rather flat with rms roughness well below 1 nm.

  17. Mossbauer investigation of Fe1-x Crx films grown by ion-beam sputter deposition

    International Nuclear Information System (INIS)

    Fe1-xCrx (02 substrates were prepared using ion-beam sputter deposition, and their structural properties were determined by 57Fe conversion electron Mossbauer spectroscopy (CEMS) and X-ray diffraction experiments (XRD) at room temperature. CEM spectra show magnetic ordering for 0< x=<0.28, and the BCC α-phase is evidenced through XRD diagrams in all cases. The general trend for the films is that the average hyperfine magnetic field (HMF) values are lower compared to bulk counterparts. Moreover, a parabolic change in average HMF with Cr content x could be established. For 0.32=< x<0.70, the CEM spectra exhibit a pseudo-single line, which denotes paramagnetic state. Between x=0.32 and x=0.38, there exists a multiphase region where the alloys mainly consist of α and δ (A15-type) phases. Then, in the concentration range x=0.38-0.58, the films only display the metastable δ-phase. For 0.58=< x=<0.66, there appears a new transition region where α- and δ-phases coexist. Finally, the domain of the paramagnetic α-phase alone stretches from x=0.66 to at least x=0.70. Emphasis is placed on the metastable δ-phase which appears over a wide monophase region. Particularly, the site occupancy could be determined through the CEM spectrum for x=0.49

  18. Optical properties of ion-beam-deposited ion-modified diamondlike (a-C:H) carbon

    International Nuclear Information System (INIS)

    Diamondlike carbon (DLC) is a hard, semitransparent material usually containing varying amounts of hydrogen. These materials have numerous potential applications, including use as coatings for infrared optics, and as such, the effects of damaging irradiation is of practical interest. In this paper we present results of variable angle spectroscopic ellipsometric (VASE) studies of ion-beam-deposited DLC films. These films have been further modified by directing 1-MeV gold ions, as well as 6.4-MeV fluorine ions, through the DLC and into the underlying silicon substrates, and the percentage of hydrogen in the film was measured versus fluence using proton recoil analysis. Optical analysis was performed assuming the Lorentz oscillator model. Three versions were used: one oscillator, two oscillator (with one fixed in energy), and two oscillator with all parameter variable. The latter model fits the VASE data extremely well, and the two oscillators can be interpreted as involving π to π* and σ to σ* band transitions. With ion modification the oscillators shift to lower photon energy, consistent with reduction in hydrogen concentration and possible increased graphitization

  19. Tribological coatings for complex mechanical elements produced by supersonic cluster beam deposition of metal dichalcogenide nanoparticles

    International Nuclear Information System (INIS)

    Fullerene-like MoS2 and WS2 nanoparticles can be used as building blocks for the fabrication of fluid and solid lubricants. Metal dichalcogenide films have a very low friction coefficient in vacuum, therefore they have mostly been used as solid lubricants in space and vacuum applications. Unfortunately, their use is significantly hampered by the fact that in the presence of humidity, oxygen and moisture, the low-friction properties of these materials rapidly degrade due to oxidation. The use of closed-cage MoS2 and WS2 nanoparticles may eliminate this problem, although the fabrication of lubricant thin films starting from dichalcogenide nanoparticles is, to date, a difficult task. Here we demonstrate the use of supersonic cluster beam deposition for the coating of complex mechanical elements (angular contact ball bearings) with nanostructured MoS2 and WS2 thin films. We report structural and tribological characterization of the coatings in view of the optimization of tribological performances for aerospace applications. (paper)

  20. Electrochemical characteristics of CrN thin films prepared by ion-beam-enhanced deposition

    International Nuclear Information System (INIS)

    It has been known that CrN has high hardness and high resistance against wear, oxidation and corrosion. Although many studies have been done on its mechanical and high temperature oxidation properties, studies on its electrochemical and corrosion properties in aqueous solutions are still limited. The aim of this study is to produce CrN thin films by ion-beam-enhanced deposition (IBED) and to make clear the corrosion behavior of CrN by electrochemical measurements. CrN thin films were prepared by IBED under various conditions and their polarization curves were measured in 1 kmol·m-3 H2SO4 and 12 kmol·m-3 HCl. Changes in the surface of the thin films by polarization were examined by XPS and in-situ ellipsometry. The thin films prepared by IBED were composed of the large amount of CrN and small amounts of Cr2N and Cr. The fraction of CrN in the films increased with increasing flow rate of nitrogen. Potentiodynamic polarization curves exhibited that the active dissolution rate of the films decreased with increasing CrN content of the films. The films with high CrN content showed excellent corrosion resistance up to the start potential of transpassive dissolution without formation of passive films. That is, the excellent corrosion resistance of CrN results from the intrinsic inactive nature of CrN surface. (author)

  1. Tribological coatings for complex mechanical elements produced by supersonic cluster beam deposition of metal dichalcogenide nanoparticles

    Science.gov (United States)

    Piazzoni, C.; Buttery, M.; Hampson, M. R.; Roberts, E. W.; Ducati, C.; Lenardi, C.; Cavaliere, F.; Piseri, P.; Milani, P.

    2015-07-01

    Fullerene-like MoS2 and WS2 nanoparticles can be used as building blocks for the fabrication of fluid and solid lubricants. Metal dichalcogenide films have a very low friction coefficient in vacuum, therefore they have mostly been used as solid lubricants in space and vacuum applications. Unfortunately, their use is significantly hampered by the fact that in the presence of humidity, oxygen and moisture, the low-friction properties of these materials rapidly degrade due to oxidation. The use of closed-cage MoS2 and WS2 nanoparticles may eliminate this problem, although the fabrication of lubricant thin films starting from dichalcogenide nanoparticles is, to date, a difficult task. Here we demonstrate the use of supersonic cluster beam deposition for the coating of complex mechanical elements (angular contact ball bearings) with nanostructured MoS2 and WS2 thin films. We report structural and tribological characterization of the coatings in view of the optimization of tribological performances for aerospace applications.

  2. Visible light active TiO2 films prepared by electron beam deposition of noble metals

    International Nuclear Information System (INIS)

    TiO2 films prepared by sol-gel method were modified by electron beam deposition of noble metals (Pt, Pd, and Ag). Effects of noble metals on the chemical and surface characteristics of the films were studied using XPS, TEM and UV-Vis spectroscopy techniques. Photocatalytic activity of modified TiO2 films was evaluated by studying the degradation of methyl orange dye solution under visible light UV irradiation. The result of TEM reveals that most of the surface area of TiO2 is covered by tiny particles of noble metals with diameter less than 1 nm. Broad red shift of UV-Visible absorption band of modified photocatalysts was observed. The catalytic degradation of methyl orange in aqueous solutions under visible light illumination demonstrates a significant enhancement of photocatalytic activity of these films compared with the un-loaded films. The photocatalytic efficiency of modified TiO2 films by this method is affected by the concentration of impregnating solution.

  3. Visible light active TiO 2 films prepared by electron beam deposition of noble metals

    Science.gov (United States)

    Hou, Xing-Gang; Ma, Jun; Liu, An-Dong; Li, De-Jun; Huang, Mei-Dong; Deng, Xiang-Yun

    2010-03-01

    TiO 2 films prepared by sol-gel method were modified by electron beam deposition of noble metals (Pt, Pd, and Ag). Effects of noble metals on the chemical and surface characteristics of the films were studied using XPS, TEM and UV-Vis spectroscopy techniques. Photocatalytic activity of modified TiO 2 films was evaluated by studying the degradation of methyl orange dye solution under visible light UV irradiation. The result of TEM reveals that most of the surface area of TiO 2 is covered by tiny particles of noble metals with diameter less than 1 nm. Broad red shift of UV-Visible absorption band of modified photocatalysts was observed. The catalytic degradation of methyl orange in aqueous solutions under visible light illumination demonstrates a significant enhancement of photocatalytic activity of these films compared with the un-loaded films. The photocatalytic efficiency of modified TiO 2 films by this method is affected by the concentration of impregnating solution.

  4. Synthesis of MoSi2 by energetic molybdenum cluster beam deposited on monocrystalline silicon at room temperature

    International Nuclear Information System (INIS)

    Mon- cluster beam was produced by a new type magnetron sputter gas aggregation cluster source. The beam was accelerated by the voltage of 0, 1, 3, 5, 10 kV and deposited onto polished p-type Si(111) substrate surface at room temperature, respectively, and then the thin film samples of Mo/Si(111) were prepared. X-ray diffraction analysis showed that there was no MoSi2 thin film formation in the area interface of Mo/Si(111) samples deposited by using both regular magnetron sputter and new type cluster source when the accelerated voltage was no more than 5 kV, whereas at the voltage of about 10 kV, there was MoSi2 thin film formed in the area interface of Mo/Si(111) samples deposited by using the new type cluster source. Only for the accelerated voltage higher than a threshold voltage (≥3 kV in this experiment), can the (110) oriented Mo thin film by the cluster beam deposition grow up. (authors)

  5. Focused-electron-beam-induced deposition of freestanding three-dimensional nanostructures of pure coalesced copper crystals

    International Nuclear Information System (INIS)

    We report on direct writing of three-dimensional freestanding nanostructures of Cu by use of a focused electron beam (FEB) and the metalorganic precursor hfac-Cu-TMVS. Freestanding horizontal rods were deposited over about 10 μm length and consist of small 2-5 nm Cu nanocrystals dispersed in an amorphous matrix containing carbon, fluorine, silicon, and oxygen. The freestanding horizontal rods were used as support for further vertical deposits resulting in tips of coalesced facetted Cu nanocrystals of up to 100 nm in size. The almost constant deposition rate of 5-6 nm/s is in contrast to vertical tips on bulk supports, which show a deposition rate decreasing from 23 to 10 nm/s. The above results suggest a thermal decomposition process induced by electron energy absorption

  6. Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Here, we report on the electrical characterization of phase change memory cells containing a Ge3Sb2Te6 (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles

  7. Surface analysis and osteoblasts response of a titanium oxi-carbide film deposited on titanium by ion plating plasma assisted (IPPA).

    Science.gov (United States)

    Mazzola, L; Bemporad, E; Misiano, C; Pepe, F; Santini, P; Scandurra, R

    2011-10-01

    Titanium is the most widely used material in orthopaedic and dental implantoprosthesis due to its superior physical properties and enhanced biocompatibility due to the spontaneous formation of a passivating layer of titanium oxides which, however, does not form good chemical bonds with bone and tends to brake exposing bulk titanium to harsh body fluids releasing titanium particles which may prime an inflammation response and a fibrotic tissue production. In order to avoid these possible problems and to enhance the biocompatibility of titanium implants, modifications of titanium surfaces by many different materials as hydroxyapatite, titanium nitride, titanium oxide and titanium carbide have been proposed. The latter is shown to be an efficient protection for the titanium implant in the harsh conditions of biological tissues and, compared to untreated titanium, acting like an osteoblast stimulation factor increasing in vitro production of proteins involved in osteogenesis. These results were confirmed by in vivo experiments in rabbits: implants covered by the titanium carbide (TiC) layer were faster and better osseointegrated than untreated titanium implants. The TiC layer was deposited by a Pulsed Laser Deposition (PLD) device which allowed only one deposition per cycle, shown to be unsuitable for industrial applications. Therefore the main objective of the present work was to replace PLD process with an Ion Plating Plasma Assisted (IPPA) deposition process, which is suitable for industrial upgrading. By this technique, nanostructured TiOx-TiCy-C has been deposited on titanium after sandblasting with 120 micron zirconia spheres. XPS analyses revealed the presence of about 33% carbon (50% of which is present as free carbon), 39% oxygen and 28% titanium (37% of which is bound to carbon to form TiC and 63% is bound to oxygen to form non stoichiometric oxides). Surface mechanical response of as-deposited coatings has been performed by nanoindentation techniques

  8. The Post—deposition Anneal Effects on the Electrical Properties of HfO2 Gate Dielectric Deposited by Ion Beam Sputtering at Room Temperature

    Institute of Scientific and Technical Information of China (English)

    KANGJinfeng; LIUXiaoyan; TIANDayu; WANGWei; LIANGuijun; XIONGGuangcheng; HANRuqi

    2003-01-01

    HfO2 high K gate dielectric films were fab-ricated on p-Si(100) substrates by ion beam sputtering at room temperature followed by a post-deposition anneal-ing (PDA). The PDA effects on the electrical properties of HfO2 gate dielectric films were studied. High quality HfO2 gate dielectric with small equivalent oxide thickness (EOT = 2.3nm), small hystereis (△VFB<50mV), and lowleakage current (< 1× 10-4A/cm2@lV) was fabricated.The studies of PDA effects on the electrical properties in-dicate that the PDA process in nitrogen ambient will be necessary for the HfO2 gate dielectric films deposited by ion beam sputtering the sintered target at room temper-ature in order to obtain small equivalent oxide thickness and low leakage currents, whereas a PDA in oxygen ambi-ent will be not required. The results also means that there is less oxygen vacancy defect produced in the HfO2 gate dielectric films during the deposition at room temperature.

  9. Effects of oxygen on electron beam induced deposition of SiO2 using physisorbed and chemisorbed tetraethoxysilane

    Science.gov (United States)

    Bishop, James; Toth, Milos; Phillips, Matthew; Lobo, Charlene

    2012-11-01

    Electron beam induced deposition (EBID) is limited by low throughput and purity of as-grown material. Co-injection of O2 with the growth precursor is known to increase both the purity and deposition rate of materials such as SiO2 at room temperature. Here, we show that O2 inhibits rather than enhances EBID from tetraethoxysilane (TEOS) precursor at elevated temperatures. This behavior is attributed to surface site competition between chemisorbates at elevated temperature, and TEOS decomposition by atomic oxygen produced through electron dissociation of physisorbed O2 at room temperature.

  10. Effects of oxygen on electron beam induced deposition of SiO{sub 2} using physisorbed and chemisorbed tetraethoxysilane

    Energy Technology Data Exchange (ETDEWEB)

    Bishop, James; Toth, Milos; Phillips, Matthew; Lobo, Charlene [School of Physics and Advanced Materials, University of Technology, Sydney, P.O. Box 123, Broadway, New South Wales 2007 (Australia)

    2012-11-19

    Electron beam induced deposition (EBID) is limited by low throughput and purity of as-grown material. Co-injection of O{sub 2} with the growth precursor is known to increase both the purity and deposition rate of materials such as SiO{sub 2} at room temperature. Here, we show that O{sub 2} inhibits rather than enhances EBID from tetraethoxysilane (TEOS) precursor at elevated temperatures. This behavior is attributed to surface site competition between chemisorbates at elevated temperature, and TEOS decomposition by atomic oxygen produced through electron dissociation of physisorbed O{sub 2} at room temperature.

  11. Structure and interfacial analysis of nanoscale TiNi thin film prepared by biased target ion beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Huilong; Hamilton, Reginald F., E-mail: rfhamilton@psu.edu; Horn, Mark W. [Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2015-07-15

    Ultrathin, 65 nm thick, TiNi alloy films were fabricated by cosputtering Ti and Ni targets using the recently developed biased target ion beam deposition technique. Preheating the substrate by exposure to a low energy ion source resulted in as-deposited films with a pure B2 atomic crystal structure containing no secondary crystal structures or precipitates. Continuous films were produced with a smooth surface and minimal substrate/film interfacial diffusion. The diffusion layer was a small ratio of film thickness, which is a prerequisite for the B2 phase to undergo the martensitic transformation in ultrathin films.

  12. Ion beam co-deposition of HTSC films on SrTiO3 and ITO/Si

    International Nuclear Information System (INIS)

    Superconducting YBa2Cu3O7-δ (YBCO) thin films were grown on Si with transparent, conducting Indium Tin Oxide (ITO) buffer layers. The onset temperature at 92K and zero resistance at 68K were measured. Both, ITO and YBCO films were deposited by ion beam co-deposition. The YBCO/ITO films exhibit metallic resistivity with positive slopes (∼0.055 Ω/K). The YBCO is uniform, textured and polycrystalline. In this paper the relevance for hybrid opto-electronic device structures is briefly discussed

  13. Palladium assisted hetroepitaxial growth of an InAs nanowire by molecular beam epitaxy

    International Nuclear Information System (INIS)

    The palladium (Pd) assisted epitaxial growth of technologically important InAs nanowires grown on GaAs{111}B substrates using molecular beam epitaxy is reported. The grown free-standing InAs nanowires adapted a vapor–liquid–solid growth mechanism. The impacts of the catalyst particle density, growth temperature and input V/III precursor ratio have been investigated to identify better growth conditions for getting high-density non-<111>-orientated InAs nanowires. We assert here that two kind of nanowires are observed, one having a pure zinc-blende crystalline structure free of stacking faults, and the other with a defect-free wurtzite crystalline structure. However, few of them have defect imperfections too. The L- and Y-shaped nanowires confirm similar surface free energies for possible <110> growth directions. These unusual growth directions are attributed to the effect of the catalyst material as well as the surface-induced strain at the interface between the grown nanowires with substrates. The structural features of the grown nanowires are studied by employing scanning and transmission electron microscopic techniques. The obtained TEM results confirm that the nanowire catalyst interface is not a straightforward zinc-blende structured nanowire. Energy dispersive x-ray (EDX) analysis reveals that the tip of the grown nanowires with the chemical composition of Pd and In have a nearly 50:50 ratio, while the nanowire body did not have any catalyst traces other than the composition of InAs for both type of nanowires. The obtained high angle annular dark field (HAADF) TEM image for both types of nanowires along with the intensity profile provided evidence for cubic as well as hexagonal facets. (paper)

  14. XPS study of target poisoning during the plasma assisted deposition of a-C:H/Au thin films

    International Nuclear Information System (INIS)

    The X-ray photoelectron spectroscopic (XPS) study of the target poisoning during the deposition of a-C:H/Au using combined radio frequency (RF) powered magnetron sputtering at 100 W and plasma-assisted chemical vapor deposition (PACVD) with a mass flow ratio of 0.5 between CH4 and at is made by Gampp. In this paper we extend this study to both RF and bipolar pulsed (BPP) powered magnetron sputtering in gas mixtures of different values of CH4/Ar mass flow ratio. Elemental compositions of deposited a-C:H/Au layers have been determined by in situ X-ray photoelectron spectroscopy. To determine the elemental content of a sample, the integration over Au 4f7/2, C 1s and 0 1s core level signals (oxygen shows up as an impurity of max. 1 at.%) was used. One may generally conclude that the character of target poisoning process is steep and step-like in time regardless of the type of magnetron power supply, i.e. that it is inherent to the deposition of a-C:H/Au using present deposition setup. Therefore, in the attempts to obtain stable and reproducible deposition conditions and homogeneous coatings, the target had to be driven to the certain degree of poisoning. This is done by conditioning in pure CH4 (covering) and in pure Ar plasma (cleaning) subsequently and alternatively, until the desired Au content is reached. Then, for deposition purposes, a CH4/Ar gas mixture was selected so that steady state of target covering and cleaning is sustained

  15. Enhancing the thermal conductivity of polymer-assisted deposited Al2O3 film by nitrogen doping

    Institute of Scientific and Technical Information of China (English)

    Huang Jiang; Zhang Yin; Pan Tai-Song; Zeng Bo; Hu Guo-Hua; Lin Yuan

    2012-01-01

    Polymer-assisted deposition technique has been used to deposit Al2O3 and N-doped Al2O3 (AlON) thin films on Si(100) substrates.The chemical compositions,crystallinity,and thermal conductivity of the as-grown films have been characterized by X-ray photoelectron spectroscopy (XPS),X-ray diffraction (XRD),and 3-omega method,respectively.Amorphous and polycrystalline Al2O3 and AlON thin films have been formed at 700 ℃ and 1000 ℃.The thermal conductivity results indicated that the effect of nitrogen doping on the thermal conductivity is determined by the competition of the increase of Al-N bonding and the suppression of crystallinity.A 67% enhancement in thermal conductivity has been achieved for the samples grown at 700 ℃,demonstrating that the nitrogen doping is an effective way to improve the thermal performance of polymer-assisted-deposited Al2O3 thin films at a relatively low growth temperature.

  16. Spatio-selective surface modification of glass assisted by laser-induced deposition of gold nanoparticles

    International Nuclear Information System (INIS)

    Using pulsed laser irradiation (532 nm), dodecanethiol-capped gold nanoparticles (DT-Au) were deposited on the laser-irradiated region of a hydrophobic glass substrate modified with dimethyloctadecylchlorosilane (DMOS). After removal of deposited DT-Au, the laser-deposited region on the substrate was hydrophilic, as verified by static water contact angles. X-ray photoelectron spectroscopy suggested that the naked glass surface was not exposed at the hydrophilic region. Immersion of the substrate into gold nanorod (NR) solution selectively immobilized NRs on the hydrophilic surface via electrostatic interactions, indicating that the hydrophilic region was an anionic surface. From these results, it is expected that some immobilized DMOS groups on the laser-irradiated region of the substrate were oxidized during DT-Au deposition and fragmentation of the deposited DT-Au

  17. Electron-beam assisted selective growth of graphenic carbon thin films on SiO2/Si and quartz substrates

    OpenAIRE

    Knyazev, Maxim; Sedlovets, Daria; Trofimov, Oleg; Redkin, Arkady

    2015-01-01

    The first selective growth of graphenic carbon thin films on silicon dioxide is reported. A preliminary e-beam exposure of the substrate is found to strongly affect the process of such films growth. The emphasis is placed on the influence of substrate exposure on the rate of carbon deposition. The explanation of this effect is proposed. The data of electrical and optical measurements and the results of atomic force and scanning electron microscopy and Raman spectroscopy studies are reported. ...

  18. Adhesion-enhanced thick copper film deposition on aluminum oxide by an ion-beam-mixed Al seed layer

    International Nuclear Information System (INIS)

    We report a highly-adherent 30-μm Cu conductive-path coating on an aluminum-oxide layer anodized on an aluminum-alloy substrate for a metal-printed circuit-board application. A 50-nm Al layer was first coated with an e-beam evaporative deposition method on the anodized oxide, followed by ion bombardment to mix the interfacial region. Subsequently, a Cu coating was deposited onto the mixed seed layer to the designed thickness. Adhesions of the interface were tested by using tape adhesion test, and pull-off tests and showed commercially acceptable adhesions for such thick coating layers. The ion beam mixing (IBM) plays the role of fastening the thin seed coating layer to the substrate and enhancing the adhesion of the Cu conductive path on the anodized aluminum surface.

  19. Structural and growth aspects of electron beam physical vapor deposited NiO-CeO{sub 2} nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Kuanr, Sushil Kumar; K, Suresh Babu, E-mail: sureshbabu.nst@pondiuni.edu.in [Centre for Nanoscience and Technology, Madanjeet School of Green Energy Technologies, Pondicherry University, Puducherry 605 014 (India)

    2016-03-15

    Deposition of composite materials as thin film by electron beam physical vapor deposition technique (EB-PVD) still remains as a challenge. Here, the authors report the deposition of NiO-CeO{sub 2} (30/70 wt. %) composites on quartz substrate by EB-PVD. Two NiO-CeO{sub 2} nanocomposite targets—one as green compact and the other after sintering at 1250 °C—were used for the deposition. Though the targets varied with respect to physical properties such as crystallite size (11–45 nm) and relative density (44% and 96%), the resultant thin films exhibited a mean crystallite size in the range of 20–25 nm underlining the role of physical nature of deposition. In spite of the crystalline nature of the targets and similar elemental concentration, a transformation from amorphous to crystalline structure was observed in thin films on using sintered target. Postannealing of the as deposited film at 800 °C resulted in a polycrystalline structure consisting of CeO{sub 2} and NiO. Deposition using pure CeO{sub 2} or NiO as target resulted in the preferential orientation toward (111) and (200) planes, respectively, showing the influence of adatoms on the evaporation and growth process of NiO-CeO{sub 2} composite. The results demonstrate the influence of electron beam gun power on the adatom energy for the growth process of composite oxide thin films.

  20. Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams

    International Nuclear Information System (INIS)

    High-quality InN layers grown on sapphire substrates by plasma-assisted molecular-beam epitaxy were characterized using monoenergetic positron beams. The carrier concentrations of the films were controlled by Si doping (2.1x1018 to 1.4x1019 cm-3), and the highest obtained Hall mobility was 1300 cm2 V-1 s-1. The Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons were measured as a function of the incident positron energy for undoped and Si-doped InN films. The line-shape parameter S increased with increasing carrier concentration, suggesting the introduction of vacancy-type defects by a Fermi-level effect. The major defect species were varied with carrier concentration, and its species were identified as In vacancies (VIn) or their related defects

  1. Fabricating Arrays of Vanadium Dioxide Nanodisks by Focused Ion-Beam Lithography and Pulsed-Laser Deposition

    International Nuclear Information System (INIS)

    Vanadium dioxide undergoes a structural (monoclinic to tetragonal) insulator-to-metal transition at 70 C, accompanied by large changes in electrical and optical properties. By combining focused ion-beam lithography and pulsed laser depo-sition, patterned arrays of vanadium dioxide nanoparticles are created that can be used for studies of linear and nonlinear optical physics, as well as demonstrating the potential for a variety of applications.

  2. Crystalline garnet Bragg reflectors for high power, high temperature, and integrated applications fabricated by multi-beam pulsed laser deposition

    OpenAIRE

    Sloyan, Katherine A.; May-Smith, Timothy C.; Zervas, Michalis N.; Eason, Robert W.

    2012-01-01

    Crystalline Bragg reflectors are of interest for high power, high temperature and integrated applications. We demonstrate the automated growth of such structures by shuttered multi-beam Pulsed Laser Deposition (PLD). Geometries include 145 layer stacks exhibiting >99.5% reflection and ? phase-shifted designs. A crystalline grating strength-apodized sample was grown by mixing plumes to obtain layers with custom refractive indices. Peak reflection wavelength was tuneable with incident position,...

  3. Megaelectron volt ion beam-induced epitaxy of deposited silicon and germanium-silicon alloys on (100) silicon substrates

    International Nuclear Information System (INIS)

    Solid phase heteroepitaxial crystallization of GexSi1-x/(100) Si was induced by MeV ion bombardment while heating the substrate at low temperatures. Rutherford Backscatter Spectrometry (RBS), Ion Channeling, Secondary Ion Mass Spectroscopy (SIMS) and transmission electron microscopy (TEM) techniques were used to investigate the kinetics of the reordering process as well as characterize the strain in the resultant epitaxial layer. The epitaxial recrystallization of amorphous silicon and silicon-germanium layers on (100)silicon, deposited under medium (10-7 torr) vacuum conditions, was induced by 2.5 MeV Ar beam irradiation in the low temperature range of 200-400C. The regrowth follows an Arrhenius dependence with temperature and activation energies of ∼0.3 eV were determined for the regrowth of deposited Si and a Ge38Si62 alloy. Ion beam induced heteroepitaxy was found to be sensitive to interfacial contaminants. In addition, the resultant crystalline quality for Ge-rich alloys was poor after irradiation. Ion beam induced heteroepitaxy of MBE-deposited GexSi1-x/(100) Si, deposited under high vacuum conditions after strict interfacial preparation, resulted in layer-by-layer reordering for alloys up to 65 at. % Ge. Coherently strained epilayers were reported for ion beam annealed GeSi alloys with germanium concentration less than 15 at. %. The pseudomorphic epilayers were characterized by planar and axial channeling to measure the tetragonal distortion in the strained overlayers. Strained films, produced by MeV Ar bombardment while heating the substrate at temperatures as low as 300C, were observed to relax following extended furnace anneals at temperatures of 800-900C. Such results offer the possibility of extending defect-free growth of metastable strained layers to other lattice mismatched systems

  4. Silver nano-particles in fluoride films fabricated by Pulsed Laser Deposition with auxiliary Electron Beam Evaporation

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Lančok, Ján; Bulíř, Jiří; Hruška, Petr; Fekete, Ladislav; Fitl, Přemysl

    Strasbourg: European Materials Research Society, 2013. [E- MRS 2013 Spring Meeting. 27.05.2013-31.05.2013, Strasbourg] R&D Projects: GA MŠk(CZ) 7AMB12FR034; GA ČR(CZ) GAP108/11/1312 Grant ostatní: AVČR(CZ) M100101271 Institutional support: RVO:68378271 Keywords : lanthanum fluoride * calcium fluoride * thin film * silver nanoparticles * pulsed laser deposition * electron beam evaporation Subject RIV: BM - Solid Matter Physics ; Magnetism

  5. Comparison of Morphology Evolution of Ge(001) Homoepitaxial Films Grown by Pulsed Laser Deposition and Molecular Beam Epitaxy

    OpenAIRE

    McCamy, James W.; Shin, Byungha; Leonard, John P.; Aziz, Michael

    2005-01-01

    Using a dual Molecular Beam Epitaxy (MBE)-Pulsed Laser Deposition (PLD) Ultra-High Vacuum chamber, we have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE. We find that in PLD with low kinetic energy and in MBE the film morphology evolves in a similar fashion: initially irregularly shaped mounds form, followed by pyramidal mounds with edges of the square-base along direc...

  6. Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy

    International Nuclear Information System (INIS)

    We have investigated the misfit relaxation process in GaN/AlxGa1-xN (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 108 cm-2 to 2 x 109 cm-2. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 1010 cm-2. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

  7. Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

    Science.gov (United States)

    Donkov, N.; Mateev, E.; Safonov, V.; Zykova, A.; Yakovin, S.; Kolesnikov, D.; Sudzhanskaya, I.; Goncharov, I.; Georgieva, V.

    2014-12-01

    Ta2O5 ceramic coatings have been deposited on glass substrates by e-beam evaporation and magnetron sputtering methods. For the magnetron sputtering process Ta target was used. X-ray diffraction measurements show that these coatings are amorphous. XPS survey spectra of the ceramic Ta2O5 coatings were obtained. All spectra consist of well-defined XPS lines of Ta 4f, 4d, 4p and 4s; O 1s; C 1s. Ta 4f doublets are typical for Ta2O5 coatings with two main peaks. Scanning electron microscopy and atomic force microscopy images of the e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have revealed a relatively flat surface with no cracks. The dielectric properties of the tantalum pentoxide coatings have been investigated in the frequency range of 100 Hz to 1 MHz. The electrical behaviour of e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have also been compared. The deposition process conditions principally effect the structure parameters and electrical properties of Ta2O5 ceramic coatings. The coatings deposited by different methods demonstrate the range of dielectric parameters due to the structural and stoichiometric composition changes

  8. Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy

    International Nuclear Information System (INIS)

    The surface groups created during plasma-assisted atomic layer deposition (ALD) of Al2O3 were studied by infrared spectroscopy. For temperatures in the range of 25-150 deg. C, -CH3 and -OH were unveiled as dominant surface groups after the Al(CH3)3 precursor and O2 plasma half-cycles, respectively. At lower temperatures more -OH and C-related impurities were found to be incorporated in the Al2O3 film, but the impurity level could be reduced by prolonging the plasma exposure. The results demonstrate that -OH surface groups rule the surface chemistry of the Al2O3 process and likely that of plasma-assisted ALD of metal oxides from organometallic precursors in general

  9. UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

    DEFF Research Database (Denmark)

    Christensen, Bo Toftmann; Papantonalis, M.R.; Auyeung, R.C.Y.;

    2004-01-01

    A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly [2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR-PLD...... substrates were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence. (C) 2003...

  10. Sapphire substrate-induced effects in VO2 thin films grown by oxygen plasma-assisted pulsed laser deposition

    International Nuclear Information System (INIS)

    We investigate the structural and electronic properties of VO2 thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO2 film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO2, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO2 film growth with SMTs that can be easily tailored for device applications

  11. Failure Strain and Strain-Stress Analysis in Titanium Nitride Coatings Deposited on Religa Heart Ext Ventricular Assist Device

    OpenAIRE

    Kopernik M.

    2015-01-01

    The Polish ventricular assist device is made of Bionate II with deposited TiN biocompatible nano-coating. The two scale finite element model is composed of a macro-model of blood chamber and a micro-model of the TiN/Bionate II. The numerical analysis of stress and strain states confirmed the possibility of fracture. Therefore, the identification of a fracture parameter considered as a failure strain is the purpose of the present work. The tensile test in a micro chamber of the SEM was perform...

  12. On the magnetic properties of iron nanostructures fabricated via focused electron beam induced deposition and autocatalytic growth processes.

    Science.gov (United States)

    Tu, F; Drost, M; Vollnhals, F; Späth, A; Carrasco, E; Fink, R H; Marbach, H

    2016-09-01

    We employ Electron beam induced deposition (EBID) in combination with autocatalytic growth (AG) processes to fabricate magnetic nanostructures with controllable shapes and thicknesses. Following this route, different Fe deposits were prepared on silicon nitride membranes under ultra-high vacuum conditions and studied by scanning electron microscopy (SEM) and scanning transmission x-ray microspectroscopy (STXM). The originally deposited Fe nanostructures are composed of pure iron, especially when fabricated via autocatalytic growth processes. Quantitative near-edge x-ray absorption fine structure (NEXAFS) spectroscopy was employed to derive information on the thickness dependent composition. X-ray magnetic circular dichroism (XMCD) in STXM was used to derive the magnetic properties of the EBID prepared structures. STXM and XMCD analysis evinces the existence of a thin iron oxide layer at the deposit-vacuum interface, which is formed during exposure to ambient conditions. We were able to extract magnetic hysteresis loops for individual deposits from XMCD micrographs with varying external magnetic field. Within the investigated thickness range (2-16 nm), the magnetic coercivity, as evaluated from the width of the hysteresis loops, increases with deposit thickness and reaches a maximum value of ∼160 Oe at around 10 nm. In summary, we present a viable technique to fabricate ferromagnetic nanostructures in a controllable way and gain detailed insight into their chemical and magnetic properties. PMID:27454990

  13. Microstructure and thermal cycling behavior of CeO2 coatings deposited by the electron beam physical vapor technique

    International Nuclear Information System (INIS)

    Excellent thermal shock resistance is required for thermal protection coatings experiencing high/low temperature cycles. In this paper, the pure ceria oxide coatings were deposited by electron beam physical vapor technique at different power densities. The grain orientation, morphology, hardness and thermal cycling oxidation behavior of CeO2 coatings were systematically studied. The deposition power density has remarkable influence on the preferred crystal orientation and morphology of the coatings. The heating–cooling test cycles from 1000 °C to room temperature indicate that the CeO2 coatings with the columnar structure show excellent thermal shock resistance. The hardness of the CeO2 coating varies with thermal cycling. - Highlights: • Electron-beam physical vapor deposited CeO2 coatings show preferred orientation. • Surface morphology of CeO2 coatings is deeply influenced by the deposition power. • CeO2 coatings with columnar structure exhibit excellent thermal shock resistance. • The hardness increases initially and then decreases during thermal cycling

  14. Thickness and component distributions of yttrium-titanium alloy films in electron-beam physical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    LI ShuaiHui; SHU YongHua; FAN Jing

    2008-01-01

    Thickness and component distributions of large-area thin films are an issue of in-ternational concern in the field of material processing. The present wor0k employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal reso-nators, deposited film thickness distribution measured by Rutherford backscat-tering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.

  15. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    Energy Technology Data Exchange (ETDEWEB)

    Knoops, Harm C. M., E-mail: h.c.m.knoops@tue.nl, E-mail: w.m.m.kessels@tue.nl [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Oxford Instruments Plasma Technology, North End, Bristol BS49 4AP (United Kingdom); Peuter, K. de; Kessels, W. M. M., E-mail: h.c.m.knoops@tue.nl, E-mail: w.m.m.kessels@tue.nl [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

    2015-07-06

    The requirements on the material properties and growth control of silicon nitride (SiN{sub x}) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiN{sub x} by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiN{sub x} by plasma-assisted ALD and that this parameter can be linked to a so-called “redeposition effect”. This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiN{sub x} ALD using SiH{sub 2}(NH{sup t}Bu){sub 2} as precursor and N{sub 2} plasma as reactant, the gas residence time τ was found to determine both SiN{sub x} film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.

  16. Matrix-Assisted Pulsed Laser Thin Film Deposition by Using Nd:YAG Laser

    Directory of Open Access Journals (Sweden)

    Francesco Bloisi

    2012-01-01

    In this paper, the MAPLE technique is described in details, together with a survey of current and possible future applications for both organic and biomaterial deposition taking into account the advantages of using an Nd:YAG laser. Beside other results, we have experimental confirmation that MAPLE applications are not limited to transparent molecules highly soluble in light absorbing solvent, thus allowing deposition of poorly soluble light absorbing molecules suspended in a light transparent liquid.

  17. Pulse-reverse electrodeposition for mesoporous metal films: combination of hydrogen evolution assisted deposition and electrochemical dealloying.

    Science.gov (United States)

    Cherevko, Serhiy; Kulyk, Nadiia; Chung, Chan-Hwa

    2012-01-21

    Hydrogen evolution assisted electrodeposition is a new bottom-up technique allowing the fast and simple synthesis of nanometals. Electrochemical dealloying is a top-down approach with the same purpose. In this work, we show that a combination of these two methods in sequence by pulse-reverse electrodeposition can be used to prepare high-surface-area nanostructured metals. Highly porous adherent platinum is obtained by the deposition of CuPt alloy during the cathodic cycles and the selective dissolution of copper during the anodic cycles. The convection created by the movement of the hydrogen bubbles increases the deposition rate and removes the dissolved copper ions from the diffusion layer, which ensures the deposition of a film with the same stoichiometry throughout the whole process. Due to the relatively high ratio of copper atoms on the surface in the as-deposited layer, it is proposed that the dealloying kinetics is significantly higher than that usually observed during the dealloying process in a model system. The proposed approach has several advantages over other methods, such as a very high growth rate and needlessness of any post-treatment processes. A detailed analysis of the effect of pulse-reverse waveform parameters on the properties of the films is presented. Mesoporous platinum with pores and ligaments having characteristic sizes of less than 10 nm, an equivalent surface area of up to ca. 220 m(2) cm(-3), and a roughness factor of more than 1000 is fabricated. PMID:22139451

  18. Plasmonic Gold Helices for the visible range fabricated by oxygen plasma purification of electron beam induced deposits

    CERN Document Server

    Haverkamp, Caspar; Jäckle, Sara; Manzoni, Anna; Christiansen, Silke

    2016-01-01

    Electron beam induced deposition (EBID) currently provides the only direct writing technique for truly three-dimensional nanostructures with geometrical features below 50 nm. Unfortunately, the depositions from metal-organic precursors suffer from a substantial carbon content. This hinders many applications, especially in plasmonics where the metallic nature of the geometric surfaces is mandatory. To overcome this problem a post-deposition treatment with oxygen plasma at room temperature was investigated for the purification of gold containing EBID structures. Upon plasma treatment, the structures experience a shrinkage in diameter of about 18 nm but entirely keep their initial shape. The proposed purification step results in a core-shell structure with the core consisting of mainly unaffected EBID material and a gold shell of about 20 nm in thickness. These purified structures are plasmonically active in the visible wavelength range as shown by dark field optical microscopy on helical nanostructures. Most no...

  19. Molecular beam epitaxy deposition of Gd2O3 thin films on SrTiO3 (100) substrate

    Science.gov (United States)

    Wang, Jinxing; Hao, Jinghua; Zhang, Yangyang; Wei, Hongmei; Mu, Juyi

    2016-06-01

    Gd2O3 thin films are grown on the SrTiO3 (100) substrate by molecular beam epitaxy (MBE) deposition. X-ray diffraction (XRD) analysis, conventional transmission electron microscopy (TEM) and aberration-corrected scanning transmission electron microscopy (STEM) are performed to investigate the microstructure of deposited thin films. It is found that the as-deposited thin film possesses a very uniform thickness of ∼40 nm and is composed of single cubic phase Gd2O3 grains. STEM and TEM observations reveal that Gd2O3 thin film grows epitaxially on the SrTiO3 (100) substrate with (001)Gd2O3//(100)STO and [110]Gd2O3//[001]STO orientations. Furthermore, the Gd atoms are found to diffuse into the SrTiO3 substrate for a depth of one unit cell and substitute for the Sr atoms near the interface.

  20. Investigation of chemical vapour deposition diamond detectors by X- ray micro-beam induced current and X-ray micro-beam induced luminescence techniques

    CERN Document Server

    Olivero, P; Vittone, E; Fizzotti, F; Paolini, C; Lo Giudice, A; Barrett, R; Tucoulou, R

    2004-01-01

    Tracking detectors have become an important ingredient in high-energy physics experiments. In order to survive the harsh detection environment of the Large Hadron Collider (LHC), trackers need to have special properties. They must be radiation hard, provide fast collection of charge, be as thin as possible and remove heat from readout electronics. The unique properties of diamond allow it to fulfill these requirements. In this work we present an investigation of the charge transport and luminescence properties of "detector grade" artificial chemical vapour deposition (CVD) diamond devices developed within the CERN RD42 collaboration, performed by means of X-ray micro-beam induced current collection (XBICC) and X-ray micro- beam induced luminescence (XBIL) techniques. XBICC technique allows quantitative estimates of the transport parameters of the material to be evaluated and mapped with micrometric spatial resolution. In particular, the high resolution and sensitivity of the technique has allowed a quantitati...

  1. Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes

    International Nuclear Information System (INIS)

    In this note it is demonstrated that optical emission spectroscopy (OES) is an easy-to-implement and valuable tool to study, optimize, and monitor thin film growth by plasma-assisted atomic layer deposition (ALD). The species in the plasma can be identified through the analysis of the light emitted by the plasma. OES provides therefore information on the reactant species delivered to the surface by the plasma but it also yields unique insight into the surface reaction products and, as a consequence, on the reaction mechanisms of the deposition process. Time-resolved measurements reveal information about the amount of precursor dosing and length of plasma exposure needed to saturate the self-limiting half reactions, which is useful for the optimization of the ALD process. Furthermore, time-resolved OES can also be used as an easy-to-implement process monitoring tool for plasma-assisted ALD processes on production equipment; for example, to monitor reactor wall conditions or to detect process faults in real time.

  2. On the magnetic properties of iron nanostructures fabricated via focused electron beam induced deposition and autocatalytic growth processes

    Science.gov (United States)

    Tu, F.; Drost, M.; Vollnhals, F.; Späth, A.; Carrasco, E.; Fink, R. H.; Marbach, H.

    2016-09-01

    We employ Electron beam induced deposition (EBID) in combination with autocatalytic growth (AG) processes to fabricate magnetic nanostructures with controllable shapes and thicknesses. Following this route, different Fe deposits were prepared on silicon nitride membranes under ultra-high vacuum conditions and studied by scanning electron microscopy (SEM) and scanning transmission x-ray microspectroscopy (STXM). The originally deposited Fe nanostructures are composed of pure iron, especially when fabricated via autocatalytic growth processes. Quantitative near-edge x-ray absorption fine structure (NEXAFS) spectroscopy was employed to derive information on the thickness dependent composition. X-ray magnetic circular dichroism (XMCD) in STXM was used to derive the magnetic properties of the EBID prepared structures. STXM and XMCD analysis evinces the existence of a thin iron oxide layer at the deposit–vacuum interface, which is formed during exposure to ambient conditions. We were able to extract magnetic hysteresis loops for individual deposits from XMCD micrographs with varying external magnetic field. Within the investigated thickness range (2–16 nm), the magnetic coercivity, as evaluated from the width of the hysteresis loops, increases with deposit thickness and reaches a maximum value of ∼160 Oe at around 10 nm. In summary, we present a viable technique to fabricate ferromagnetic nanostructures in a controllable way and gain detailed insight into their chemical and magnetic properties.

  3. UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

    DEFF Research Database (Denmark)

    Christensen, Bo Toftmann; Papantonalis, M.R.; Auyeung, R.C.Y.; Kim, W.; O'Malley, S.M.; Bubb, D.M.; Horwitz, J.S.; Schou, Jørgen; Johansen, P.M.; Haglund Jr., R.E.

    A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly [2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR-PLD)....

  4. Ion beam etching of high resolution structures in Ta2O5 for grating-assisted directional coupler applications

    International Nuclear Information System (INIS)

    An investigation on thin Ta2O5 films patterning using argon ion beam etching (IBE) is presented. The etch rates are characterised by varying the angle of incidence of the beam onto the substrate. Ta2O5 gratings with a period of 2.2 μm (1.1 μm linewidth) and 0.25 μm thickness are fabricated using an angle of incidence of 0 deg . The resulting Ta2O5 grating cross sectional profiles are analysed using AFM and SEM imaging. A fabrication method is thus demonstrated which could be used to implement wavelength selective gratings in applications such as grating-assisted directional couplers (GADCs)

  5. Structural and composition investigations at delayered locations of low k integrated circuit device by gas-assisted focused ion beam

    International Nuclear Information System (INIS)

    The authors report a new delayering technique – gas-assisted focused ion beam (FIB) method and its effects on the top layer materials of integrated circuit (IC) device. It demonstrates a highly efficient failure analysis with investigations on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive x-ray spectroscopy and Fourier transform infrared analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB delayering open up a new insight avenue for the failure analysis in IC devices

  6. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    OpenAIRE

    S. S. Kushvaha; P.Pal; Shukla, A. K.; Joshi, Amish G; Govind Gupta; M. Kumar; Singh, S.; Bipin K. Gupta; Haranath, D.

    2014-01-01

    We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001) substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film s...

  7. InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

    OpenAIRE

    Young Sheng-Joue; Wu Ya-Ling; Chen Yue-Zhang; Hung Hung; Wang Shih-Ming; Chen Kuan-Jen; Liu Kuang-Wei; Chang Shoou-Jinn; Hsueh Tao-Hung; Mai Yu-Chun

    2011-01-01

    Abstract The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the ...

  8. Very high temperature chemical vapor deposition of new carbon thin films using organic semiconductor molecular beam sources

    Energy Technology Data Exchange (ETDEWEB)

    Noguchi, Takuya [Department of Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033 (Japan); Shimada, Toshihiro, E-mail: shimada@chem.s.u-tokyo.ac.j [Department of Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033 (Japan); Hanzawa, Akinori; Hasegawa, Tetsuya [Department of Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033 (Japan)

    2009-11-30

    We carried out the preparation and characterization of new carbon films deposited using an organic molecular beam deposition apparatus with very high substrate temperature (from room temperature to 2670 K), which we newly developed. When we irradiated molecular beam of organic semiconductor perylene tetracarboxylic acid dianhydride (PTCDA) on Y{sub 0.07}Zr{sub 0.93}O{sub 2} (111) at 2170 K, a new carbon material was formed via decomposition and fusing of the molecules. The films were characterized with an atomic force microscope (AFM), Raman spectroscopy, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Zirconium carbide (ZrC) films were identified beneath the topmost carbon layer by XRD and XPS analyses, which results from chemical reactions of the substrate and the molecules. Partially graphitized aromatic rings of PTCDA were observed from Raman spectroscopy. The present technique - very high temperature chemical vapor deposition using organic semiconductor sources - will be useful to study a vast unexplored field of covalent carbon solids.

  9. Artificial granularity in two-dimensional arrays of nanodots fabricated by focused-electron-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Porrati, F; Sachser, R; Huth, M [Physikalisches Institut, Goethe-Universitaet, Max-von-Laue-Strasse 1, D-60438 Frankfurt am Main (Germany); Strauss, M [Max-Planck-Institut fuer Biophysik, Max-von-Laue-Strasse 3, D-60438 Frankfurt am Main (Germany); Andrusenko, I; Gorelik, T; Kolb, U [Institut fuer Physikalische Chemie, Johannes Gutenberg-Universitaet Mainz, Welderweg 11, D-55099 Mainz (Germany); Bayarjargal, L; Winkler, B [Institut fuer Geowissenschaften, Abt. Kristallographie, Goethe-Universitaet, Altenhoeferallee 1, D-60438 Frankfurt am Main (Germany)

    2010-09-17

    We have prepared 2D arrays of nanodots embedded in an insulating matrix by means of focused-electron-beam-induced deposition using the W(CO){sub 6} precursor. By varying the deposition parameters, i.e. the electron beam current and energy and the raster constant, we obtain an artificial granular material with tunable electrical properties. The analysis of the temperature dependence of the conductivity and of the current-voltage characteristic suggests that the transport mechanism is governed by electron tunneling between artificial grains. In order to understand the nature of the granularity and thus the microstructural origin of the electronic transport behavior, we perform TEM and micro-Raman investigations. Independent of the deposition parameters, TEM measurements show that the dots are constituted of amorphous tungsten carbide clusters embedded in an amorphous carbonaceous matrix. Micro-Raman spectra show two peaks, around 690 and 860 cm{sup -1} associated with the W-C stretching modes. Higher frequency peaks give information on the composition of the matrix. In particular, we measure a peak at about 1290 cm{sup -1}, which is associated with sp{sup 3} carbon bonds. Furthermore we detect the so-called D and G peaks, at about 1350 and 1560 cm{sup -1}, associated with the vibration modes of the sp{sup 2} carbon bonds. The analysis of the position of the peaks and of their relative intensity suggests that the composition of the matrix is between nanocrystalline graphite and amorphous carbon.

  10. Process diagnostics and monitoring using the multipole resonance probe in an inhomogeneous plasma for ion-assisted deposition of optical coatings

    International Nuclear Information System (INIS)

    The application of a multipole resonance probe (MRP) for diagnostic and monitoring purposes in a plasma ion-assisted deposition (PIAD) process is reported. Recently, the MRP was proposed as an economical and industry compatible plasma diagnostic device (Lapke et al 2011 Plasma Sources Sci. Technol. 20 042001). The major advantages of the MRP are its robustness against dielectric coating and its high sensitivity to measure the electron density. The PIAD process investigated is driven by the advanced plasma source (APS), which generates an ion beam in the deposition chamber for the production of high performance optical coatings. With a background neutral pressure of p0 ∼ 20 mPa the plasma expands from the source region into the recipient, leading to an inhomogeneous spatial distribution. Electron density and electron temperature vary over the distance from substrate (ne ∼ 109 cm−3 and Te,eff ∼ 2 eV) to the APS (ne ≳ 1012 cm−3 and Te,eff ∼ 20 eV) (Harhausen et al 2012 Plasma Sources Sci. Technol. 21 035012). This huge variation of the plasma parameters represents a big challenge for plasma diagnostics to operate precisely for all plasma conditions. The results obtained by the MRP are compared to those from a Langmuir probe chosen as reference diagnostics. It is demonstrated that the MRP is suited for the characterization of the PIAD plasma as well as for electron density monitoring. The latter aspect offers the possibility to develop new control schemes for complex industrial plasma environments. (paper)

  11. Simulation of the secondary electrons energy deposition produced by proton beams in PMMA: influence of the target electronic excitation description

    International Nuclear Information System (INIS)

    We have studied the radial dependence of the energy deposition of the secondary electron generated by swift proton beams incident with energies T = 50 keV - 5 MeV on poly(methylmethacrylate) (PMMA). Two different approaches have been used to model the electronic excitation spectrum of PMMA through its energy loss function (ELF), namely the extended-Drude ELF and the Mermin ELF. The singly differential cross section and the total cross section for ionization, as well as the average energy of the generated secondary electrons, show sizeable differences at T ≤ 0.1 MeV when evaluated with these two ELF models. In order to know the radial distribution around the proton track of the energy deposited by the cascade of secondary electrons, a simulation has been performed that follows the motion of the electrons through the target taking into account both the inelastic interactions (via electronic ionizations and excitations as well as electron-phonon and electron trapping by polaron creation) and the elastic interactions. The radial distribution of the energy deposited by the secondary electrons around the proton track shows notable differences between the simulations performed with the extended-Drude ELF or the Mermin ELF, being the former more spread out (and, therefore, less peaked) than the latter. The highest intensity and sharpness of the deposited energy distributions takes place for proton beams incident with T ∼ 0.1 - 1 MeV. We have also studied the influence in the radial distribution of deposited energy by using a full energy distribution of secondary electrons generated by proton impact or by using a single value (namely, the average value of the distribution); our results show that differences between both simulations become important for proton energies larger than ∼ 0.1 MeV. The results presented in this work have potential applications in materials science, as well as hadron therapy (due to the use of PMMA as a tissue phantom) in order to properly

  12. Plasma and Beam Production Experiments with HYBRIS, a Microwave-assisted H- Ion source

    International Nuclear Information System (INIS)

    A two-stage ion source concept had been presented a few years ago, consisting of a proven H- ion source and a 2.45-GHz Electron Cyclotron-Resonance (ECR) type ion source, here used as a plasma cathode. This paper describes the experimental development path pursued at Lawrence Berkeley National Laboratory, from the early concept to a working unit that produces plasma in both stages and creates a negative particle beam. Without cesiation applied to the second stage, the H- fraction of this beam is very low, yielding 75 micro-amperes of extracted ion beam current at best. The apparent limitations of this approach and envisaged improvements are discussed

  13. Durable Silver Mirror Coating Via Ion Assisted, Electron Beam Evaporation For Large Aperture Optics Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In the Phase I research, Surface Optics Corporation (SOC) demonstrated a durable silver mirror coating based an ion assisted, thermal evaporation process. The...

  14. Surface-grafted polymer-assisted electroless deposition of metals for flexible and stretchable electronics.

    Science.gov (United States)

    Liu, Xuqing; Zhou, Xuechang; Li, Yi; Zheng, Zijian

    2012-05-01

    Surface-grafted polymers, that is, ultrathin layers of polymer coating covalently tethered to a surface, can serve as a particularly promising nanoplatform for electroless deposition (ELD) of metal thin films and patterned structures. Such polymers consist of a large number of well-defined binding sites for highly efficient and selective uptake of ELD catalysts. Moreover, the polymer chains provide flexible 3D network structures to trap the electrolessly deposited metal particles, leading to strong metal-substrate adhesion. In the past decade, surface-grafted polymers have been demonstrated as efficient nanoplatforms for fabricating durable and high-performance metal coatings by ELD on plastic substrates for applications in flexible and stretchable electronics. This focus review summarizes these recent advances, with a particular focus on applications in polymeric flexible and stretchable substrates. An outlook on the future challenges and opportunities in this field is given at the end of this paper. PMID:22392811

  15. Pulse-reverse electrodeposition for mesoporous metal films: combination of hydrogen evolution assisted deposition and electrochemical dealloying

    Science.gov (United States)

    Cherevko, Serhiy; Kulyk, Nadiia; Chung, Chan-Hwa

    2012-01-01

    Hydrogen evolution assisted electrodeposition is a new bottom-up technique allowing the fast and simple synthesis of nanometals. Electrochemical dealloying is a top-down approach with the same purpose. In this work, we show that a combination of these two methods in sequence by pulse-reverse electrodeposition can be used to prepare high-surface-area nanostructured metals. Highly porous adherent platinum is obtained by the deposition of CuPt alloy during the cathodic cycles and the selective dissolution of copper during the anodic cycles. The convection created by the movement of the hydrogen bubbles increases the deposition rate and removes the dissolved copper ions from the diffusion layer, which ensures the deposition of a film with the same stoichiometry throughout the whole process. Due to the relatively high ratio of copper atoms on the surface in the as-deposited layer, it is proposed that the dealloying kinetics is significantly higher than that usually observed during the dealloying process in a model system. The proposed approach has several advantages over other methods, such as a very high growth rate and needlessness of any post-treatment processes. A detailed analysis of the effect of pulse-reverse waveform parameters on the properties of the films is presented. Mesoporous platinum with pores and ligaments having characteristic sizes of less than 10 nm, an equivalent surface area of up to ca. 220 m2 cm-3, and a roughness factor of more than 1000 is fabricated.Hydrogen evolution assisted electrodeposition is a new bottom-up technique allowing the fast and simple synthesis of nanometals. Electrochemical dealloying is a top-down approach with the same purpose. In this work, we show that a combination of these two methods in sequence by pulse-reverse electrodeposition can be used to prepare high-surface-area nanostructured metals. Highly porous adherent platinum is obtained by the deposition of CuPt alloy during the cathodic cycles and the selective

  16. Laser-assisted deposition and element analysis of nano-composite oxide thin films

    International Nuclear Information System (INIS)

    Functional oxide thin films are epitaxially grown by pulsed-laser deposition (PLD) method. High-Tc superconducting (HTS) films of enhanced critical current density Jc are deposited by laser ablation of YBa2Cu3O7 (Y-123) ceramics containing Y2Ba4CuMOx (M-2411, M=Ag,Nb,Ru,Zr) nano-particles. The Jc enhancement of nano-composite films depends on the secondary phase content of the ceramic targets. Piezoelectric oxides such as novel GaPO4 and ZnO doped with Lithium and Aluminum are grown as thin films and double-layers. The monitoring of deposition processes and the element analysis of layers and ceramics are performed by laser-induced break down spectroscopy (LIBS). The LIBS signals recorded in situ are stable for more than 10000 laser pulses employed for target ablation. The relative element concentration in thin films and ceramics is the same demonstrating stoichiometric ablation and transfer of the multi-component oxide materials

  17. Assisted deposition of nano-hydroxyapatite onto exfoliated carbon nanotube oxide scaffolds.

    Science.gov (United States)

    Zanin, H; Rosa, C M R; Eliaz, N; May, P W; Marciano, F R; Lobo, A O

    2015-06-14

    Electrodeposited nano-hydroxyapatite (nHAp) is more similar to biological apatite in terms of microstructure and dimension than apatites prepared by other processes. Reinforcement with carbon nanotubes (CNTs) enhances its mechanical properties and increases adhesion of osteoblasts. Here, we carefully studied nHAp deposited onto vertically aligned multi-walled CNT (VAMWCNT) scaffolds by electrodeposition and soaking in a simulated body fluid (SBF). VAMWCNTs are porous biocompatible scaffolds with nanometric porosity and exceptional mechanical and chemical properties. The VAMWCNT films were prepared on a Ti substrate by a microwave plasma chemical vapour deposition method, and then oxidized and exfoliated by oxygen plasma etching (OPE) to produce graphene oxide (GO) at the VAMWCNT tips. The attachment of oxygen functional groups was found to be crucial for nHAp nucleation during electrodeposition. A thin layer of plate-like and needle-like nHAp with high crystallinity was formed without any need for thermal treatment. This composite (henceforth referred to as nHAp-VAMWCNT-GO) served as the scaffold for in vitro biomineralization when soaked in the SBF, resulting in the formation of both carbonate-rich and carbonate-poor globular-like nHAp. Different steps in the deposition of biological apatite onto VAMWCNT-GO and during the short-term biomineralization process were analysed. Due to their unique structure and properties, such nano-bio-composites may become useful in accelerating in vivo bone regeneration processes. PMID:25990927

  18. Electroless deposition of metal nanoparticles on graphene with substrate-assisted techniques

    Science.gov (United States)

    Zaniewski, Anna M.; Trimble, Christie J.; Meeks, Veronica; Nemanich, Robert J.

    2015-03-01

    We present the electroless reduction of solution-based metal ions for nanoparticle deposition on a variety of substrates. The substrates include graphene-coated metals, insulators, doped semiconductors, and patterned ferroelectrics. We find that the metal ions are spontaneously reduced on a wide variety of graphene substrates, and the substrates play a large role in the nanoparticle coverage. For example, the reduction of gold chloride to gold nanoparticles on graphene/lithium niobate results in 3% nanoparticle coverage compared to 20% coverage on graphene/silicon and 60% on graphene/copper. Given that the work function of graphene is approximately 4.4eV, the Fermi level is -0.1 V vs the normal hydrogen electrode (NHE). Since the reduction potential of gold chloride is +1.002 V, the spontaneous transfer of electrons from the graphene to the metal ion is energetically favorable. However, we find substrates with similar work functions nevertheless result in varied deposition rates, which we attribute to electron availability. We also find that patterned ferrolectrics can be used as a template for patterned nanoparticle deposition, with and without graphene. This work is supported by the National Science Foundation under Grant # DMR-1206935.

  19. Assisted deposition of nano-hydroxyapatite onto exfoliated carbon nanotube oxide scaffolds

    Science.gov (United States)

    Zanin, H.; Rosa, C. M. R.; Eliaz, N.; May, P. W.; Marciano, F. R.; Lobo, A. O.

    2015-05-01

    Electrodeposited nano-hydroxyapatite (nHAp) is more similar to biological apatite in terms of microstructure and dimension than apatites prepared by other processes. Reinforcement with carbon nanotubes (CNTs) enhances its mechanical properties and increases adhesion of osteoblasts. Here, we carefully studied nHAp deposited onto vertically aligned multi-walled CNT (VAMWCNT) scaffolds by electrodeposition and soaking in a simulated body fluid (SBF). VAMWCNTs are porous biocompatible scaffolds with nanometric porosity and exceptional mechanical and chemical properties. The VAMWCNT films were prepared on a Ti substrate by a microwave plasma chemical vapour deposition method, and then oxidized and exfoliated by oxygen plasma etching (OPE) to produce graphene oxide (GO) at the VAMWCNT tips. The attachment of oxygen functional groups was found to be crucial for nHAp nucleation during electrodeposition. A thin layer of plate-like and needle-like nHAp with high crystallinity was formed without any need for thermal treatment. This composite (henceforth referred to as nHAp-VAMWCNT-GO) served as the scaffold for in vitro biomineralization when soaked in the SBF, resulting in the formation of both carbonate-rich and carbonate-poor globular-like nHAp. Different steps in the deposition of biological apatite onto VAMWCNT-GO and during the short-term biomineralization process were analysed. Due to their unique structure and properties, such nano-bio-composites may become useful in accelerating in vivo bone regeneration processes.

  20. Double-beam pulsed laser deposition for the growth of Al-incorporated ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, L. [Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Circuito Exterior S/N, Ciudad Universitaria, AP 70-186, C.P. 04510 México D.F., México (Mexico); Sánchez-Aké, C., E-mail: citlali.sanchez@ccadet.unam.mx [Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Circuito Exterior S/N, Ciudad Universitaria, AP 70-186, C.P. 04510 México D.F., México (Mexico); Bizarro, M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-186, C.P. 04510 México D.F., México (Mexico)

    2014-05-01

    Pulsed laser deposition in a delayed-double beam configuration is used to incorporate in situ Al in ZnO thin films. In this configuration, two synchronized pulsed-laser beams are employed to ablate independently a ZnO and an Al target. We investigated the effects of relative time delay of plasma plumes on the composition of the films with the aim of evaluating the performance of this technique to produce doped materials. Relative delay between plumes was found to control the incorporation of Al in the film in the range from 14% to 30%. However, to produce low impurity concentration of Al-doped ZnO (with Al incorporation less than 2%) the fluence used to produce the plasmas has more influence over the film composition than the relative plume delay. The minimum incorporation of Al corresponded to a relative delay of 0 μs, due to the interaction between plumes during their expansion.

  1. Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering

    International Nuclear Information System (INIS)

    A hybrid plasma deposition process, combining matrix assisted pulsed laser evaporation (MAPLE) of carbon nanopearls (CNPs) with magnetron sputtering of gold was investigated for growth of composite films, where 100 nm sized CNPs were encapsulated into a gold matrix. Composition and morphology of such composite films was characterized with x-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy (TEM) analysis. Carbon deposits on a gold magnetron sputter target and carbon impurities in the gold matrices of deposited films were observed while codepositing from gold and frozen toluene-CNP MAPLE targets in pure argon. Electrostatic quadrupole plasma analysis was used to determine that a likely mechanism for generation of carbon impurities was a reaction between toluene vapor generated from the MAPLE target and the argon plasma originating from the magnetron sputtering process. Carbon impurities of codeposited films were significantly reduced by introducing argon-oxygen mixtures into the deposition chamber; reactive oxygen species such as O and O+ effectively removed carbon contamination of gold matrix during the codeposition processes. Increasing the oxygen to argon ratio decreased the magnetron target sputter rate, and hence hybrid process optimization to prevent gold matrix contamination and maintain a high sputter yield is needed. High resolution TEM with energy dispersive spectrometry elemental mapping was used to study carbon distribution throughout the gold matrix as well as embedded CNP clusters. This research has demonstrated that a hybrid MAPLE and magnetron sputtering codeposition process is a viable means for synthesis of composite thin films from premanufactured nanoscale constituents, and that cross-process contaminations can be overcome with understanding of hybrid plasma process interaction mechanisms.

  2. Reversible wettability of electron-beam deposited indium-tin-oxide driven by ns-UV irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Persano, Luana [NNL, National Nanotechnology Laboratory of CNR-Istituto Nanoscienze, Universita del Salento, via Arnesano, I-73100 Lecce (Italy); Center for Biomolecular Nanotechnologies UNILE, Istituto Italiano di Tecnologia, Via Barsanti, I-73010 Arnesano-LE (Italy); Del Carro, Pompilio [NNL, National Nanotechnology Laboratory of CNR-Istituto Nanoscienze, Universita del Salento, via Arnesano, I-73100 Lecce (Italy); Pisignano, Dario [NNL, National Nanotechnology Laboratory of CNR-Istituto Nanoscienze, Universita del Salento, via Arnesano, I-73100 Lecce (Italy); Center for Biomolecular Nanotechnologies UNILE, Istituto Italiano di Tecnologia, Via Barsanti, I-73010 Arnesano-LE (Italy); Dipartimento di Matematica e Fisica ' ' Ennio De Giorgi' ' , Universita del Salento, via Arnesano, I-73100 Lecce (Italy)

    2012-04-09

    Indium tin oxide (ITO) is one of the most widely used semiconductor oxides in the field of organic optoelectronics, especially for the realization of anode contacts. Here the authors report on the control of the wettability properties of ITO films deposited by reactive electron beam deposition and irradiated by means of nanosecond-pulsed UV irradiation. The enhancement of the surface water wettability, with a reduction of the water contact angle larger than 50 deg., is achieved by few tens of seconds of irradiation. The analyzed photo-induced wettability change is fully reversible in agreement with a surface-defect model, and it can be exploited to realize optically transparent, conductive surfaces with controllable wetting properties for sensors and microfluidic circuits.

  3. Reversible wettability of electron-beam deposited indium-tin-oxide driven by ns-UV irradiation

    International Nuclear Information System (INIS)

    Indium tin oxide (ITO) is one of the most widely used semiconductor oxides in the field of organic optoelectronics, especially for the realization of anode contacts. Here the authors report on the control of the wettability properties of ITO films deposited by reactive electron beam deposition and irradiated by means of nanosecond-pulsed UV irradiation. The enhancement of the surface water wettability, with a reduction of the water contact angle larger than 50 deg., is achieved by few tens of seconds of irradiation. The analyzed photo-induced wettability change is fully reversible in agreement with a surface-defect model, and it can be exploited to realize optically transparent, conductive surfaces with controllable wetting properties for sensors and microfluidic circuits.

  4. Molecular beam deposition of high-permittivity polydimethylsiloxane for nanometer-thin elastomer films in dielectric actuators

    DEFF Research Database (Denmark)

    M. Weiss, Florian; Madsen, Frederikke Bahrt; Töpper, Tino;

    2016-01-01

    dielectric properties. To produce elastomer layers nanometers thin, molecular beam deposition was introduced. We pursue the synthesis of a high-permittivity oligomer, namely a chloropropyl-functional, vinyl-terminated siloxane to be thermally evaporated and subsequent UV curing to form an elastomer. The......To realize low-voltage dielectric elastomer actuators (DEAs) for artificial muscles, a high-permittivity elastomer and a related thin-film deposition technique must be selected. For polydimethylsiloxane, fillers or functionalized crosslinkers have been incorporated into the elastomer to improve...... monitoring. Using atomic force microscopy, the film surface morphology and mechanics were characterized after growth termination and subsequent curing. The Young's modulus of the elastomer corresponded to (1.8 ± 0.2) MPa and is thus a factor of two lower than that of DMS-V05. Consequently, the properties of...

  5. Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy

    OpenAIRE

    Hudait, Mantu K.; Zhu, Y.; Maurya, Deepam; Priya, Shashank

    2013-01-01

    The band alignment properties of atomic layer HfO2 film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO2 film. The measured valence band offset value of HfO2 relative to (110)Ge was 2.28 +/- 0.05 eV. The extracted conduction band offset value was 2.66 +/- 0.1 eV using the bandgaps of HfO2 of 5.61 eV ...

  6. Superconducting YBa2Cu3O7 thin films grown in-situ by ion beam co-deposition

    International Nuclear Information System (INIS)

    Superconducting YBCO thin films have been grown in-situ by three ion beam co-deposition sputtering. Both metal and oxide targets of Cu and Y and BaF2 and BaCO3 targets have been investigated. Film composition was determined by RBS and AES analysis. Films grown using BaF2 show fluorine contamination, whereas the carbon concentration in films grown using BaCO3 is beneath the Auger detection limit. Superconducting films have been grown on SrTiO3(Tco = 78K) and on Si with SiO2 or Y2O3 buffer layers(Tco = 35K)

  7. Comparison of the dose deposited between the OBI system and the Varian TrueBeam Imaging system

    International Nuclear Information System (INIS)

    The use of imaging systems for positioning kilovoltage radiotherapy treatments has experienced a peak in recent years. Techniques such as IMRT, these systems are applied to a large number of sessions to ensure accurate positioning. This makes it increased the interest to know the dose deposited in the patient. Companies involved in developing new designs focus their efforts on reducing the dose due to these positioning systems. The aim of this study is to compare the dose delivered by the OBI image guidance system with the new system image TrueBeam, both of Varian, both planar imaging as CT (CBCT).

  8. Oxidation of nanostructured Ti films produced by low energy cluster beam deposition: An X-ray Photoelectron Spectroscopy characterization

    Energy Technology Data Exchange (ETDEWEB)

    Simone, Monica de, E-mail: desimone@tasc.infm.it [CNR-IOM Laboratorio TASC, Area Science Park Basovizza, 34149 Trieste (Italy); Snidero, Elena [CNR-IOM Laboratorio TASC, Area Science Park Basovizza, 34149 Trieste (Italy); Coreno, Marcello [CNR-IMIP, c/o Laboratorio TASC Area Science Park Basovizza, 34149 Trieste (Italy); Sincrotrone Trieste ScpA, Area Science Park Basovizza, 34149 Trieste (Italy); Bongiorno, Gero [Fondazione Filarete, v.le Ortles 22/4, 20139 Milano (Italy); Giorgetti, Luca [Istituto Europeo di Oncologia, Dip. di Oncologia Sperimentale, Via Adamello 16, 20139, Milano (Italy); Amati, Matteo [Sincrotrone Trieste ScpA, Area Science Park Basovizza, 34149 Trieste (Italy); Cepek, Cinzia [CNR-IOM Laboratorio TASC, Area Science Park Basovizza, 34149 Trieste (Italy)

    2012-05-01

    We used in-situ X-ray Photoelectron Spectroscopy (XPS) to study the oxidation process of a cluster-assembled metallic titanium film exposed to molecular oxygen at room temperature. The nanostructured film has been grown on a Si(111) substrate, in ultra high vacuum conditions, by coupling a supersonic cluster beam deposition system with an XPS experimental chamber. Our results show that upon in-situ oxygen exposure Ti{sup 3+} is the first oxidation state observed, followed by Ti{sup 4+}, whereas Ti{sup 2+} is practically absent during the whole process. Our results compare well with the existing literature on Ti films produced using other techniques.

  9. Transition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy

    OpenAIRE

    Xie, MH; Wu, HS; Shi, BM; Wang, N.; Tong, SY

    2006-01-01

    GaN exists in both wurtzite and zinc-blende phases and the growths of the two on its (0001) or (111) surfaces are achieved by choosing proper deposition conditions of molecular-beam epitaxy (MBE). At low substrate temperatures but high gallium fluxes, metastable zinc-blende GaN films are obtained, whereas at high temperatures and/or using high nitrogen fluxes, equilibrium wurtzite phase GaN epilayers resulted. This dependence of crystal structure on substrate temperature and source flux is no...

  10. Oxidation of nanostructured Ti films produced by low energy cluster beam deposition: An X-ray Photoelectron Spectroscopy characterization

    International Nuclear Information System (INIS)

    We used in-situ X-ray Photoelectron Spectroscopy (XPS) to study the oxidation process of a cluster-assembled metallic titanium film exposed to molecular oxygen at room temperature. The nanostructured film has been grown on a Si(111) substrate, in ultra high vacuum conditions, by coupling a supersonic cluster beam deposition system with an XPS experimental chamber. Our results show that upon in-situ oxygen exposure Ti3+ is the first oxidation state observed, followed by Ti4+, whereas Ti2+ is practically absent during the whole process. Our results compare well with the existing literature on Ti films produced using other techniques.

  11. Effect of Hydrogen ion beam irradiation onto the FIR reflectivity of pulsed laser deposited mirror like Tungsten films

    International Nuclear Information System (INIS)

    Graphical abstract: The specular FIR reflectivity of the W1, W2, W3 and W4 mirrors before and after 8 keV Hydrogen ion beam irradiation. Highlights: ► Mirror like W thin films were obtained via PLD. ► The maximum thickness of the Tungsten thin film was ∼324 nm. ► Effect of H-ion beam irradiation on the quality of PLD W mirror is reported. ► Post exposure reflectivity of Tungsten thin films was hardly changed by 2%. - Abstract: The optical quality of the First Mirrors (FMs) of a fusion device (burning plasma experiments, ITER) deteriorates due to the erosion by charge exchange neutrals, re-deposition of the eroded material and the lattice damage by the bombardment of the high energetic particles. This degradation of the optical quality of the plasma facing components in such a harsh environment is a serious concern for the reliability of the spectroscopic based optical diagnostics using FM of a fusion device. In this paper, the effect of 8 keV Hydrogen ion beam irradiation onto the FIR reflectivity of Tungsten thin film mirror is presented. The Tungsten thin films were prepared via Pulsed Laser Deposition (PLD) technique. The Tungsten mirrors were subjected to X-ray Diffraction (XRD), Energy Dispersive X-ray (EDX), Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) for characterization. The specular reflectivities of the Tungsten mirrors before and after exposure to ion beam were recorded with Fourier Transform of Infra-Red (FTIR) technique. The ion penetration depth and straggle into Tungsten thin film and stainless steel (SS) substrate were estimated by Transport of Ions in Matter (TIRM) simulation code. The changes in post exposure IR reflectivity were interpreted in terms of these parameters.

  12. Damage evaluation in metal structures subjected to high energy deposition due to particle beams

    CERN Document Server

    Peroni, L; Dallocchio, A

    2011-01-01

    The unprecedented energy intensities of modern hadron accelerators yield special problems with the materials that are placed close to or into the high intensity beams. The energy stored in a single beam of LHC particle accelerator is equivalent to about 80 kg of TNT explosive, stored in a transverse beam area with a typical value of 0.2 mm×0.2 mm. The materials placed close to the beam are used at, or even beyond, their damage limits. However, it is very difficult to predict structural efficiency and robustness accurately: beam-induced damage for high energy and high intensity occurs in a regime where practical experience does not exist. The interaction between high energy particle beams and metals induces a sudden non uniform temperature increase. This provokes a dynamic response of the structure entailing thermal stress waves and thermally induced vibrations or even the failure of the component. This study is performed in order to estimate the damage on a copper component due to the impact with a 7 TeV pro...

  13. Characterization of ion-beam-induced carbon deposition on WC-Co hard metal by microhardness, scratch and abrasive wear tests

    International Nuclear Information System (INIS)

    Diamond-like ion-beam-deposited carbon (i-C) layers were obtained on WC-Co cemented carbide using a mass-separated 12C beam at an energy of 500 eV and a deposition rate of 3 A s-1. The mechanical properties of these layers were probed using microhardness and scratch tests and abrasive wear measurements. All these tests revealed that the depositions possess an extremely high hardness and good adhesion to the substrate. In particular, a hardness of 75 GPa was obtained, which is considerably higher than that found on i-C films involving hydrogen. (orig.)

  14. Structural, optical, and conducting properties of crystalline ZnO:Co thin films grown by reactive electron beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gürbüz, Osman; Güner, Sadık, E-mail: sguner@fatih.edu.tr; Büyükbakkal, Ömer; Çalışkan, Serkan

    2015-01-01

    We deposited an undoped ZnO and 6 different Co doped ZnO (ZnO:Co) thin films on fused silica (SiO{sub 2}) substrates with ∼100 nm thickness at substrate temperature of 125 °C using a Reactive Electron Beam Deposition technique. Energy-Dispersive X-ray Spectroscopy (EDS) was used to analyze the elemental composition rates of films. Elemental Co concentration varies from 4.62 to 28.77 at. %. The surface morphologies and grain sizes of thin films were investigated by Scanning Electron Microscope (SEM). The crystal and phase structures of the ZnO:Co thin films were characterized using X-ray diffraction (XRD). The films have single crystal and polycrystalline structures due to Co concentrations. Theoretical crystallite size and strain calculations were performed by applying the Scherrer and Williamson–Hall (W–H) methods. The grain sizes are 2–4 times greater than the crystalline sizes for ZnO:Co films. Optical properties of the films were studied by absorbance measurements using a UV–vis spectrophotometer. The analysis of the optical absorption spectra indicated that the energy band gap of the bulk ZnO film increased from 3.22 eV to maximum 4.17 eV upon Co deposition. Co{sup 2+} ion replaces Zn{sup 2+} ion in the structure without causing any remarkable defect for its hexagonal Wurtzite structure. Electrical conducting properties were investigated by using a Four Point Probe (FPP) technique. The conductivity depends on crystalline quality and Co concentration. - Highlights: • Fabrication of ZnO and ZnO:Co films through the Reactive Electron Beam deposition technique. • Reproducible single crystalline structured films. • Optical properties and band gap values were specified. • The conductivity depends on crystalline quality and Co concentration. • The films have potential for optoelectronic applications.

  15. Low temperature deposition of indium tin oxide films by plasma ion-assisted evaporation.

    Science.gov (United States)

    Füchsel, Kevin; Schulz, Ulrike; Kaiser, Norbert; Tünnermann, Andreas

    2008-05-01

    Coatings of transparent conductive oxides, especially indium tin oxide (ITO), are important in different fields. So far, application of these materials has been limited to substrates with high thermal stability. We describe an improved coating process for ITO based on plasma ion-assisted evaporation at a substrate temperature below 100 degrees C, which is suitable for organic substrates. In characterizing the thin films, we used the classical Drude theory to calculate the resistivity from optical film properties and compared the data with linear four-point measurements. X-ray diffraction spectroscopy was used to determine the structural properties of the thin films. PMID:18449263

  16. The effect of electricity on 2–fluoroaniline removal in a bioelectrochemically assisted microbial system (BEAMS)

    International Nuclear Information System (INIS)

    Highlights: • An bioelectrochemically assisted microbial system was developed for treating 2-fluoroaniline. • The system significantly increased the removal and mineralization of 2-fluoroaniline. • Suitably weak current stimulated specific catechol dioxygenase activity. • Suitably weak current have the directional effects on specific microbial communities. - Abstract: Bioelectrochemical auxiliary for treating wastewater has gained extensive attention and it is a promising technology for wastes especially refractory wastes treatment. In this study a bioelectrochemically assisted microbial system (BEAMS) was developed for 2-fluoroaniline removal in organic fluorine wastewater. The effects of electricity on 2-fluoroaniline removal performance, metabolic behavior as well as bacterial community structures were investigated. The BEAMS showed excellent performance in removing 2-fluoroaniline, the maximum biological defluorination and mineralization rates achieved being 116.07% and 43.06% higher, respectively, than the rates in the biological control. Suitable current intensity had positive effects on biological metabolism and the key enzyme for 2-fluoroaniline degrading catechol dioxygenase was stimulated, which increased the ability of the system to mineralize 2-fluoroaniline. Moreover, the current intensity had directional effects on specific microbial communities for 2-fluoroaniline degradation. These results give us a more detailed understanding of the effects of electricity on the treatment of 2-fluoroaniline contaminated wastewater and the system offers promise as a way of treating persistent organic pollutants

  17. Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges

    Science.gov (United States)

    Tallaire, Alexandre; Achard, Jocelyn; Silva, François; Brinza, Ovidiu; Gicquel, Alix

    2013-02-01

    Diamond is a material with outstanding properties making it particularly suited for high added-value applications such as optical windows, power electronics, radiation detection, quantum information, bio-sensing and many others. Tremendous progresses in its synthesis by microwave plasma assisted chemical vapour deposition have allowed obtaining single crystal optical-grade material with thicknesses of up to a few millimetres. However the requirements in terms of size, purity and crystalline quality are getting more and more difficult to achieve with respect to the forecasted applications, thus pushing the synthesis method to its scientific and technological limits. In this paper, after a short description of the operating principles of the growth technique, the challenges of increasing crystal dimensions both laterally and vertically, decreasing and controlling point and extended defects as well as modulating crystal conductivity by an efficient doping will be detailed before offering some insights into ways to overcome them.

  18. Monte Carlo simulation of the behaviour of electrons during electron-assisted chemical vapour deposition of diamond

    Institute of Scientific and Technical Information of China (English)

    董丽芳; 陈俊英; 董国义; 尚勇

    2002-01-01

    The behaviour of electrons during electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron energy distribution and velocity distribution are obtained over a wide range of reduced field E/N (the ratio of the electric field to gas molecule density) from 100 to 2000 in units of 1Td=10-17Vcm2.Their effects on the diamond growth are also discussed. Themain results obtained are as follows. (1) The velocity profile is asymmetric for the component parallel to the field.Ihe velocity distribution has a peak shift in the field direction. Most electrons possess non-zero velocity parallel to the substrate. (2) The number of atomic H is a function of E/N. (3) High-quality diamond can be obtained under the condition of E/N from 50 to 800Td due to sufficient atomic H and electron bombardment.

  19. Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

    International Nuclear Information System (INIS)

    We report GaN thin film transistors (TFT) with a thermal budget below 250 °C. GaN thin films are grown at 200 °C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3 nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (ION/IOFF) of 103 and sub-threshold swing of 3.3 V/decade. The entire TFT device fabrication process temperature is below 250 °C, which is the lowest process temperature reported for GaN based transistors, so far.

  20. Numerical And Experimental Analysis Of Fracture Of Athrombogenic Coatings Deposited On Ventricular Assist Device In Micro-Shear Test

    Directory of Open Access Journals (Sweden)

    Kopernik M.

    2015-06-01

    Full Text Available The Polish left ventricular assist device (LVAD – RELIGA_EXT will be made of thermoplastic polycarbonate-urethane (Bionate II with deposited athrombogenic nano-coatings: gold (Au and titanium nitride (TiN. Referring to the physical model, the two-scale model of LVAD developed in the previous works in the authors’ finite element code is composed of a macro-model of blood chamber and a micro-model of wall: TiN, Au and Bionate II. The numerical analysis of stress and strain states confirmed the possibility of fracture based on localization of zones of the biggest values of triaxiality factor. The introduction of Au interlayer between TiN and polymer improved the toughness of the connection, and increased the compressive residual stress in the coating what resulted in reduction of stress and strain close to the boundary between substrate and coating.

  1. Deposition of matrix-free fullerene films with improved morphology by matrix-assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Canulescu, Stela; Schou, Jørgen; Fæster, Søren;

    2013-01-01

    Thin films of C60 were deposited by matrix-assisted pulsed laser evaporation (MAPLE) from a frozen target of anisole with 0.67 wt% C60. Above a fluence of 1.5 J/cm2 the C60 films are strongly non-uniform and are resulting from transfer of matrix-droplets containing fullerenes. At low fluence the...... fullerene molecules in the films are intact, the surface morphology is substantially improved and there are no measurable traces of the matrix molecules in the film. This may indicate a regime of dominant evaporation at low fluence which merges into the MAPLE regime of liquid ejection of the host matrix at...

  2. Role of fluorine atoms in the oxidation-hydrolysis process of plasma assisted chemical vapor deposition fluorinated silicon nitride film

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, O.; Gomez-Aleixandre, C.; Palacio, C. (Universidad Autonoma de Madrid (Spain))

    The oxidation and/or hydrolysis of a plasma assisted chemical vapor deposition fluorinated silicon nitride film in a moisture atmosphere has been studied. The film presents fluorine atoms incorporated as -SiF, -SiF[sub 2], -SiF[sub 3], and [-SiF[sub 2]-][sub n] groups. The open structure of the film, due to the high fluorine content as [-SiF[sub 2]-][sub n], favors the penetration of oxygen and water molecules in the network. The evolution of the film has been explained by the different reactivity of the silicon atoms depending on their chemical environment. The role of fluorine atoms incorporated into the film has been established. 12 refs., 3 figs., 1 tab.

  3. Ion-assisted deposition of yttrium fluoride as a substitute for thorium fluoride: application to infrared antireflection coating on germanium

    Science.gov (United States)

    Robic, Jean-Yves; Rolland, Bernard; Deutsch, Jean-Claude; Gallais, Patrick

    1994-11-01

    Yttrium fluoride has been proposed as a substitute for thorium fluoride in anti-reflection coatings for the infrared range. We have studied the ion assisted deposition (IAD) of YF3 in order to obtain dense and low absorbency layers in the 8 to 12 mm spectral window. Refractive index and extinction coefficient of this fluoride were determined from spectrophotometry measurements. We have then associated the YF3 with ZnS and Ge layers so as to obtain four layer anti-reflection coatings on germanium. The stress induced by each layer in the coating was measured and the sum was shown to be equal to the stress of the total coating. Eventually, an industrial, high efficiency, both side anti-reflection coating on germanium was developed using IAD YF3 film.

  4. Properties of La and Nb-modified PZT thin films grown by radio frequency assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Verardi, P. [CNR-Istituto di Acustica, Via del Fosso del Cavaliere 100, I-00133 Rome (Italy); Craciun, F. [CNR-Istituto dei Sistemi Complessi, Via del Fosso del Cavaliere 100, I-00133 Rome (Italy); Dinescu, M. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania)]. E-mail: dinescum@ifin.nipne.ro; Scarisoreanu, N. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania); Moldovan, A. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania); Purice, A. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania); Galassi, C. [CNR-ISTEC, Via Granarolo 64, I 48018 Faenza (Italy)

    2005-04-25

    Lead zirconate titanate ferroelectric thin films added with La and Nb has been grown by radio frequency assisted pulsed laser deposition on Pt/Si, starting from sintered targets. The dielectric properties were measured in a large frequency range and their dependence on the a.c. driving field amplitude has been investigated. A linear decreasing of the dielectric permittivity with frequency logarithm increasing has been evidenced. The most important factor for the driving field amplitude influence on the dielectric properties is the type of vacancies introduced by La and Nb substitutions, which indicates that the dynamics involved in a.c. field behavior is controlled by interaction mechanisms between ferroelectric domain or nanodomain walls and pinning (vacancies) centers.

  5. Polymer-assisted metal deposition (PAMD): a full-solution strategy for flexible, stretchable, compressible, and wearable metal conductors.

    Science.gov (United States)

    Yu, You; Yan, Casey; Zheng, Zijian

    2014-08-20

    Metal interconnects, contacts, and electrodes are indispensable elements for most applications of flexible, stretchable, and wearable electronics. Current fabrication methods for these metal conductors are mainly based on conventional microfabrication procedures that have been migrated from Si semiconductor industries, which face significant challenges for organic-based compliant substrates. This Research News highlights a recently developed full-solution processing strategy, polymer-assisted metal deposition (PAMD), which is particularly suitable for the roll-to-roll, low-cost fabrication of high-performance compliant metal conductors (Cu, Ni, Ag, and Au) on a wide variety of organic substrates including plastics, elastomers, papers, and textiles. This paper presents i) the principles of PAMD, and how to use it for making ii) flexible, stretchable, and wearable conductive metal electrodes, iii) patterned metal interconnects, and d) 3D stretchable and compressible metal sponges. A critical perspective on this emerging strategy is also provided. PMID:24458846

  6. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    International Nuclear Information System (INIS)

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N2/H2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N2:H2 ambient

  7. Properties of Erbium Doped Hydrogenated Amorphous Carbon Layers Fabricated by Sputtering and Plasma Assisted Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    V. Prajzler

    2008-01-01

    Full Text Available We report about properties of carbon layers doped with Er3+ ions fabricated by Plasma Assisted Chemical Vapor Deposition (PACVD and by sputtering on silicon or glass substrates. The structure of the samples was characterized by X-ray diffraction and their composition was determined by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The Absorbance spectrum was taken in the spectral range from 400 nm to 600 nm. Photoluminescence spectra were obtained using two types of Ar laser (λex=514.5 nm, lex=488 nm and also using a semiconductor laser (λex=980 nm. Samples fabricated by magnetron sputtering exhibited typical emission at 1530 nm when pumped at 514.5 nm. 

  8. Computer assisted in vivo measurements of internally deposited radionuclides using dual-crystal scintillation detectors

    International Nuclear Information System (INIS)

    This paper discusses a channel specific modification of the low energy photon spectrum from an in vivo measurement of internally deposited radionuclides to remove the influence of naturally occurring K-40 in the body. A method has been developed to take advantage of the CsI(Tl) crystal in the dual-crystal detector and use it to directly measure K-40 while the then NaI(Tl) crystal measures only the low energy photons. Live-time, interactive computer analysis is used to determine the channel specific percentage contribution to the low energy spectrum

  9. Surface hydrophobic modification of cellulose membranes by plasma-assisted deposition of hydrocarbon films

    Directory of Open Access Journals (Sweden)

    Mudtorlep Nisoa

    2010-03-01

    Full Text Available Surface modification by plasma polymerization is an efficient method to change the surface properties of a membrane. Desirable functionality such as hydrophobicity or hydrophilicity can be obtained, depending on plasma chemistry of gas precursors and discharge conditions. In this work, RF magnetron plasma is produced using acetylene and nitrogen as precursor gases. Variations of RF power, particle flux, deposited time and pressure of the precursor gases have been made to observe coating effects on the cellulose membranes. When appropriated conditions are used, a thin brownish film of hydrocarbon was formed on the membrane, and the water contact angle increased from 35 to 130 degrees.

  10. Spatially selective materials deposition by hydrogen-assisted laser-induced transfer

    International Nuclear Information System (INIS)

    Si and Al lines were deposited on glass substrates using a transfer technique based on the explosive release of hydrogen from a hydrogenated amorphous Si film melted by a laser pulse. The Si lines have a minimum width of 4.5 μm and are well defined, while the Al lines are wider and less uniform. Analysis of time-resolved infrared transmission signals reveals that the lines do not break into droplets upon ejection, in contrast to the behavior of unpatterned films. This difference is attributed to the escape of hydrogen through the sides of the molten lines into the adjacent material. (c) 2000 American Institute of Physics

  11. Large area ion and plasma beam sources

    International Nuclear Information System (INIS)

    In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.)

  12. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

    Science.gov (United States)

    Meng, Jun Hua; Zhang, Xing Wang; Wang, Hao Lin; Ren, Xi Biao; Jin, Chuan Hong; Yin, Zhi Gang; Liu, Xin; Liu, Heng

    2015-09-01

    Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were obtained by using the continuous h-BN film as a substrate. Furthermore, the well-designed sub-bilayered h-BN substrates provide direct evidence that the monolayered h-BN on Cu exhibits higher catalytic activity than the bilayered h-BN on Cu. The growth method applied here may have great potential in the scalable preparation of large-area high-quality graphene/h-BN heterostructures.Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were

  13. Ozone-assisted atomic layer deposited ZnO thin films for multifunctional device applications

    International Nuclear Information System (INIS)

    We demonstrate the growth temperature dependence of film thickness and surface roughness of ZnO films grown by atomic layer deposition using ozone as an oxidizer. The significantly low growth rate of the film using O3 precursor is attributed to the recombinative surface loss of O3. The variation of the spatial uniformity inferred from the surface roughness of the ZnO films and the O3 concentration was explained by a transition from reaction- to recombination-limited growth. We have fabricated a metal–oxide–semiconductor device, consisting of an insulating ZnO layer using an O3 source, between metallic and semiconducting Al : ZnO layers. The device demonstrates a remarkable resistive switching behaviour. The electrochemical migration of oxygen vacancies, which is created in the vicinity of the interface of ZnO semiconductor–ZnO insulator, drives the resistive switching behaviour. This significant result produced on the all-oxide-based device fabricated by atomic layer deposited ZnO can have significant impact for multifunctional applications. (paper)

  14. In-situ photo-assisted deposition of silver particles on hydrogel fibers for antibacterial applications

    International Nuclear Information System (INIS)

    Silver nanoparticles (AgNPs) have attracted intensive research interest and have been recently incorporated in polymers, medical devices, hydrogels and burn dressings to control the proliferation of microorganisms. In this study a novel silver antibacterial coating was deposited for the first time on hydrogel fibers through an in-situ photo-chemical reaction. Hydrogel blends obtained by mixing different percentages of silver-treated and untreated fibers were characterized by thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). Four different fluids, such as phosphate buffered saline (PBS), simulated body fluid (SBF), chemical simulated wound fluid (cSWF), and deionized water (DI water), were used for evaluating the swelling properties. The results obtained confirmed that the presence of silver did not affect the properties of the hydrogel. Moreover, the results obtained through inductively coupled plasma mass spectrometry (ICP-MS) demonstrated very low silver release values, thus indicating the perfect adhesion of the silver coating to the substrate. Good antibacterial capabilities were demonstrated by any hydrogel blend on Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) through agar diffusion tests and optical density readings. - Highlights: • An innovative nano-silver deposition technique was adopted on hydrogel fibers. • Antibacterial effects was verified by agar diffusion and optical density tests. • The swelling properties were investigated using 4 different fluids. • Hydrogel blends with different percentages of silver-treated fibers were compared

  15. Synthesis of CdS nanostructures using template-assisted ammonia-free chemical bath deposition

    Science.gov (United States)

    Preda, N.; Enculescu, M.; Gherendi, F.; Matei, E.; Toimil-Molares, M. E.; Enculescu, I.

    2012-09-01

    CdS micro- and nano-structures (micro/nanotubes and nanostructured films) were obtained by ammonia-free chemical bath deposition using polymer templates (ion track-etched polycarbonate membranes and poly(styrene-hydroxyethyl methacrylate) nanosphere arrays). The semiconductor structures were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), optical absorption, photoluminescence and electrical measurements. The diameters of CdS tubes are between 300 nm and few microns and the lengths are up to tens of micrometers. The SEM images prove that the CdS films are nanostructured due to the deposition on the polymer nanosphere arrays. For both CdS structures (tubes and films) the XRD patterns show a hexagonal phase. The optical studies reveal a band gap value of about 2.5-2.6 eV and a red luminescence at ˜1.77 eV. A higher increase of conductivity is observed for illuminating the CdS nanostructured film when compared to the simple semiconductor film. This is a consequence of the periodic patterning induced by the polymer nanosphere array.

  16. In-situ photo-assisted deposition of silver particles on hydrogel fibers for antibacterial applications

    Energy Technology Data Exchange (ETDEWEB)

    Raho, Riccardo [Department of Engineering for Innovation, University of Salento, Via per Monteroni, 73100 Lecce (Italy); CBN, Center for Biomolecular Nanotechnologies, Fondazione Istituto Italiano di Tecnologia, Via Barsanti, 73010 Arnesano, Lecce (Italy); Paladini, Federica; Lombardi, Fiorella Anna [Department of Engineering for Innovation, University of Salento, Via per Monteroni, 73100 Lecce (Italy); Boccarella, Sandro [Megatex S.p.A., Via Cima D' Aosta, 73040 Melissano, Lecce (Italy); Zunino, Benedetta [Università Cattolica del Sacro Cuore, Largo Francesco Vito 1, 00198 Roma (Italy); Pollini, Mauro, E-mail: mauro.pollini@unisalento.it [Department of Engineering for Innovation, University of Salento, Via per Monteroni, 73100 Lecce (Italy); Silvertech Ltd., Via per Monteroni, 73100 Lecce (Italy)

    2015-10-01

    Silver nanoparticles (AgNPs) have attracted intensive research interest and have been recently incorporated in polymers, medical devices, hydrogels and burn dressings to control the proliferation of microorganisms. In this study a novel silver antibacterial coating was deposited for the first time on hydrogel fibers through an in-situ photo-chemical reaction. Hydrogel blends obtained by mixing different percentages of silver-treated and untreated fibers were characterized by thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). Four different fluids, such as phosphate buffered saline (PBS), simulated body fluid (SBF), chemical simulated wound fluid (cSWF), and deionized water (DI water), were used for evaluating the swelling properties. The results obtained confirmed that the presence of silver did not affect the properties of the hydrogel. Moreover, the results obtained through inductively coupled plasma mass spectrometry (ICP-MS) demonstrated very low silver release values, thus indicating the perfect adhesion of the silver coating to the substrate. Good antibacterial capabilities were demonstrated by any hydrogel blend on Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) through agar diffusion tests and optical density readings. - Highlights: • An innovative nano-silver deposition technique was adopted on hydrogel fibers. • Antibacterial effects was verified by agar diffusion and optical density tests. • The swelling properties were investigated using 4 different fluids. • Hydrogel blends with different percentages of silver-treated fibers were compared.

  17. Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

    Science.gov (United States)

    Adolph, David; Tingberg, Tobias; Ive, Tommy

    2015-09-01

    Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 445 °C and an O2 flow rate of 2.5 standard cubic centimeters per minute, we obtained ZnO layers with statistically smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm as revealed by atomic force microscopy. The full-width-at-half-maximum for x-ray rocking curves obtained across the ZnO(0002) and ZnO(10 1 bar 5) reflections was 198 and 948 arcsec, respectively. These values indicated that the mosaicity of the ZnO layer was comparable to the corresponding values of the underlying GaN buffer layer. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82% and 73%, respectively, and that the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements revealed that the layers were inherently n-type and had an electron concentration of 1×1019 cm-3 and a Hall mobility of 51 cm2/V s.

  18. Growth model investigation for AlN/Al(Ga)InN interface growth by plasma-assisted molecular beam epitaxy for high electron mobility transistor applications

    Energy Technology Data Exchange (ETDEWEB)

    Aidam, Rolf; Diwo, Elke; Godejohann, Birte-Julia; Kirste, Lutz; Quay, Ruediger; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2014-12-01

    Heterostructures with lattice matched Al(Ga)InN barriers have been widely investigated as alternative to standard AlGaN/GaN based high electron mobility transistor structures for high power applications. Mostly these heterostructures comprise a thin AlN based spacer between GaN channel and lattice matched barrier. One key issue for high quality plasma-assisted molecular beam epitaxy (PA-MBE) of these structures is the control of the AlN-Al(Ga)InN interface since optimal growth conditions for high quality AlN differ significantly from those for growth of indium containing material. In this paper, a detailed analysis and a deduced model of the interface growth is presented. The Al/N ratio during AlN spacer growth is likely to influence the subsequent growth of quaternary Al(Ga)InN. Ideal Al/N ratio leads to high performance heterostructures, while slightly Al-rich conditions lead to the formation of Al residues on the substrate surface, which hinder subsequent epitaxial growth. Al/N ratios below unity lead to the deposition of ternary AlGaN instead of binary AlN spacers and to increased alloy scattering. An insertion of a thin GaN layer between spacer and barrier can hinder the formation of Al residues and leads to improved wafer homogeneity. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

    International Nuclear Information System (INIS)

    We report on the InGaN multiquantum laser diodes (LDs) made by rf plasma-assisted molecular beam epitaxy (PAMBE). The laser operation at 408 nm is demonstrated at room temperature with pulsed current injections using 50 ns pulses at 0.25% duty cycle. The threshold current density and voltage for the LDs with cleaved uncoated mirrors are 12 kA/cm2 (900 mA) and 9 V, respectively. High output power of 0.83 W is obtained during pulse operation at 3.6 A and 9.6 V bias with the slope efficiency of 0.35 W/A. The laser structures are deposited on the high-pressure-grown low dislocation bulk GaN substrates taking full advantage of the adlayer enhanced lateral diffusion channel for adatoms below the dynamic metallic cover. Our devices compare very favorably to the early laser diodes fabricated using the metalorganic vapor phase epitaxy technique, providing evidence that the relatively low growth temperatures used in this process pose no intrinsic limitations on the quality of the blue optoelectronic components that can be fabricated using PAMBE

  20. Fabrication and gas sensing properties of pure and au-functionalised W03 nanoneedle-like structures, synthesised via aerosol assisted chemical vapour deposition method

    OpenAIRE

    Stoycheva, Toni

    2011-01-01

    In this doctoral thesis, it has been investigated and developed the Aerosol Assisted Chemical Vapour Deposition (AACVD) method for direct in-situ growth of intrinsic and Au-functionalised nanostructured WO3, as well as SnO2-based devices for gas sensing applications. The nanostructured material synthesis, device fabrication and their gas sensing properties have been studied. AACVD method was used for synthesis and direct deposition of sensing films onto classical alumina and microhotplat...