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Sample records for beam assisted deposition

  1. Lifetime obtained by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chakaroun, M. [XLIM-MINACOM-UMR 6172, Faculte des Sciences et Techniques, 123 av. Albert Thomas, 87060 Limoges cedex (France); Antony, R. [XLIM-MINACOM-UMR 6172, Faculte des Sciences et Techniques, 123 av. Albert Thomas, 87060 Limoges cedex (France)], E-mail: remi.antony@unilim.fr; Taillepierre, P.; Moliton, A. [XLIM-MINACOM-UMR 6172, Faculte des Sciences et Techniques, 123 av. Albert Thomas, 87060 Limoges cedex (France)

    2007-09-15

    We have fabricated green organic light-emitting diodes based on tris-(8-hydroxyquinoline)aluminium (Alq3) thin films. In order to favor the charge carriers transport from the anode, we have deposited a N,N'-diphenyl-N,N'-bis (3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) layer (hole transport layer) on a ITO anode. Cathode is obtained with a calcium layer covered with a silver layer. This silver layer is used to protect the other layers against oxygen during the OLED use. All the depositions are performed under vacuum and the devices are not exposed to air during their realisation. In order to improve the silver layer characteristics, we have realized this layer with the ion beam assisted deposition process. The aim of this process is to densify the layer and then reduce the permeation of H{sub 2}O and O{sub 2}. We have used argon ions to assist the silver deposition. All the OLEDs optoelectronic characterizations (I = f(V), L = f(V)) are performed in the ambient air. We compare the results obtained with the assisted layer with those obtained with a classical cathode realized by thermal unassisted evaporation. We have realized lifetime measurements in the ambient air and we discuss about the assisted layer influence on the OLEDs performances.

  2. Ion beam assisted deposition of metal-coatings on beryllium

    International Nuclear Information System (INIS)

    Tashlykov, I.S.; Tul'ev, V.V.

    2015-01-01

    Thin films were applied on beryllium substrates on the basis of metals (Cr, Ti, Cu and W) with method of the ion-assisted deposition in vacuum. Me/Be structures were prepared using 20 kV ions irradiation during deposition on beryllium neutral fraction generated from vacuum arc plasma. Rutherford back scattering and computer simulation RUMP code were applied to investigate the composition of the modified beryllium surface. Researches showed that the superficial structure is formed on beryllium by thickness ~ 50-60 nm. The covering composition includes atoms of the deposited metal (0.5-3.3 at. %), atoms of technological impurity carbon (0.8-1.8 at. %) and oxygen (6.3-9.9 at. %), atoms of beryllium from the substrate. Ion assisted deposition of metals on beryllium substrate is accompanied by radiation enhanced diffusion of metals, oxygen atoms in the substrate, out diffusion of beryllium, carbon atoms in the deposited coating and sputtering film-forming ions assists. (authors)

  3. Corrosion properties of aluminum based alloys deposited by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Enders, B.; Krauss, S.; Wolf, G.K.

    1994-01-01

    The replacement of cadmium coatings by other protective measures is an important task because of the environmentally detrimental properties of cadmium. Therefore, aluminum and aluminum alloy coatings containing elements such as silicon or magnesium with more positive or negative positions in the galvanic series in relation to pure aluminum were deposited by ion beam assisted deposition onto glass and low carbon steel. Pure aluminum films were deposited onto low carbon steel in order to study the influence of the ion-to-atom arrival ratio and the angle of ion incidence on the corrosion properties. For examination of the pitting behavior as a function of the concentration of alloying element, quasipotentiostatic current-potential and potentiostatic current-time plots were measured in chlorine-containing acetate buffer. It is shown that these alloys can protect steel substrates under uniform and pitting corrosion conditions considerably better than pure aluminum coatings. ((orig.))

  4. Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Yu Zhinong; Li Yuqiong; Xia Fan; Zhao Zhiwei; Xue Wei

    2009-01-01

    The optical, electrical and mechanical properties of indium tin oxide (ITO) films prepared on polyethylene terephthalate (PET) substrates by ion beam assisted deposition at room temperature were investigated. The properties of ITO films can be improved by introducing a buffer layer of silicon dioxide (SiO 2 ) between the ITO film and the PET substrate. ITO films deposited on SiO 2 -coated PET have better crystallinity, lower electrical resistivity, and improved resistance stability under bending than those deposited on bare PET. The average transmittance and the resistivity of ITO films deposited on SiO 2 -coated PET are 85% and 0.90 x 10 -3 Ω cm, respectively, and when the films are bent, the resistance remains almost constant until a bending radius of 1 cm and it increases slowly under a given bending radius with an increase of the bending cycles. The improved resistance stability of ITO films deposited on SiO 2 -coated PET is mainly attributed to the perfect adhesion of ITO films induced by the SiO 2 buffer layer.

  5. Ion assistance effects on electron beam deposited MgF sub 2 films

    CERN Document Server

    Alvisi, M; Della Patria, A; Di Giulio, M; Masetti, E; Perrone, M R; Protopapa, M L; Tepore, A

    2002-01-01

    Thin films of MgF sub 2 have been deposited by the ion-assisted electron-beam evaporation technique in order to find out the ion beam parameters leading to films of high laser damage threshold whose optical properties are stable under uncontrolled atmosphere conditions. It has been found that the ion-assisted electron-beam evaporation technique allows getting films with optical properties (refraction index and extinction coefficient) of high environmental stability by properly choosing the ion-source voltage and current. But, the laser damage fluence at 308 nm was quite dependent on the assisting ion beam parameters. Larger laser damage fluences have been found for the films deposited by using assisting ion beams delivered at lower anode voltage and current values. It has also been found that the films deposited without ion assistance were characterized by the highest laser damage fluence (5.9 J/cm sup 2) and the lowest environmental stability. The scanning electron microscopy analysis of the irradiated areas...

  6. Space-qualified optical thin films by ion-beam-assisted deposition

    International Nuclear Information System (INIS)

    Hsiao, C.N.; Chen, H.P.; Chiu, P.K.; Lin, Y.W.; Chen, F.Z.; Tsai, D.P.

    2013-01-01

    Optical interference coatings designed for use in a space-grade multispectral assembly in a complementary metal-oxide‐semiconductor sensor were deposited on glass by ion-beam-assisted deposition for a Cassegrain-type space-based remote-sensing platform. The patterned multispectral assembly containing blue, green, red, near infrared, and panchromatic multilayer high/low alternated dielectric band-pass filter arrays in a single chip was fabricated by a mechanical mask and the photolithography process. The corresponding properties of the films were investigated by in situ optical monitoring and spectrometry. It was found that the optical properties were significantly improved by employing ion-beam-assisted deposition. The average transmittances were above 88% for the multispectral assembly, with a rejection transmittance of less than 1% in the spectral range 350–1100 nm. To estimate the optical stability of optical coatings for aerospace applications, a space environment assuming a satellite orbiting the Earth at an altitude of near 800 km was simulated by a Co 60 gamma (γ) radiation test. - Highlights: ►Parameters of optical filters were optimized by using admittance loci analysis. ►Higher index of refraction of films prepared by ion beam assisted deposition. ►The dielectric filters have acceptable resistance after γ radiation exposure

  7. Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

    International Nuclear Information System (INIS)

    Bae, J.W.; Kim, J.S.; Yeom, G.Y.

    2001-01-01

    Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90 deg. C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cmx20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%

  8. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  9. Ion beam assisted deposition of nano-structured C:Ni films

    Energy Technology Data Exchange (ETDEWEB)

    Abrasonis, G.; Muecklich, A.; Heller, R.; Heinig, K.H.; Gemming, S.; Moeller, W. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Krause, M. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Institute of Physics, TU Dresden (Germany)

    2012-07-01

    Nanostructures influence material properties dramatically due to size, shape and interface effects. Thus the control of the structure at the nanoscale is a key issue in nanomaterials science. The interaction of hyperthermal ions with solids is confined to the nanometer scale. Thus, it can be used to control the morphology evolution during multiphase film deposition. Ion-induced displacements occur in a thin surface layer of the growing film where they increase the atomic mobility for the phase separation. Here the growth-structure relationship of C:Ni (15 at.%) nanocomposite films grown by oblique incidence (45 ) ion beam assisted deposition is reported. The influences of the flux of an assisting Ar+ ion beam (0-140 eV) as well as of an elevated substrate temperature have been studied. The formation of elongated nickel nanoparticles is strongly promoted by the ion beam assistance. Moreover, the metal nanocolumns no longer align with the advancing surface, but with the incoming ions. A window of conditions is established within which the ion assistance leads to the formation of regular composition modulations with a well defined periodicity and tilt. As the dominating driving force for the pattern formation is of physical origin, this approach might be applicable to other immiscible systems.

  10. Optimization of ion assist beam deposition of magnesium oxide template films during initial nucleation and growth

    Energy Technology Data Exchange (ETDEWEB)

    Groves, James R [Los Alamos National Laboratory; Matias, Vladimir [Los Alamos National Laboratory; Stan, Liliana [Los Alamos National Laboratory; De Paula, Raymond F [Los Alamos National Laboratory; Hammond, Robert H [STANFORD UNIV.; Clemens, Bruce M [STANFOED UNIV.

    2010-01-01

    Recent efforts in investigating the mechanism of ion beam assisted deposition (IBAD) of biaxially textured thin films of magnesium oxide (MgO) template layers have shown that the texture develops suddenly during the initial 2 nm of deposition. To help understand and tune the behavior during this initial stage, we pre-deposited thin layers of MgO with no ion assist prior to IBAD growth of MgO. We found that biaxial texture develops for pre-deposited thicknesses < 2 nm, and that the thinnest layer tested, at 1 nm, resulted in the best qualitative RHEED image, indicative of good biaxial texture development. The texture developed during IBAD growth on the 1.5 nm pre-deposited layer is slightly worse and IBAD growth on the 2 nm pre-deposited layer produces a fiber texture. Application of these layers on an Al{sub 2}O{sub 3} starting surface, which has been shown to impede texture development, improves the overall quality of the IBAD MgO and has some of the characteristics of a biaxially texture RHEED pattern. It is suggested that the use of thin (<2 nm) pre-deposited layers may eliminate the need for bed layers like Si{sub 3}N{sub 4} and Y{sub 2}O{sub 3} that are currently thought to be required for proper biaxial texture development in IBAD MgO.

  11. Corrosion properties of aluminium coatings deposited on sintered NdFeB by ion-beam-assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mao Shoudong; Yang Hengxiu; Li Jinlong; Huang Feng [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 519 Zhuangshi Road, Ningbo 315201 (China); Song Zhenlun, E-mail: songzhenlun@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 519 Zhuangshi Road, Ningbo 315201 (China)

    2011-04-15

    Pure Al coatings were deposited by direct current (DC) magnetron sputtering to protect sintered NdFeB magnets. The effects of Ar{sup +} ion-beam-assisted deposition (IBAD) on the structure and the corrosion behaviour of Al coatings were investigated. The Al coating prepared by DC magnetron sputtering with IBAD (IBAD-Al-coating) had fewer voids than the coating without IBAD (Al-coating). The corrosion behaviour of the Al-coated NdFeB specimens was investigated by potentiodynamic polarisation, a neutral salt spray (NSS) test, and electrochemical impedance spectroscopy (EIS). The pitting corrosion of the Al coatings always began at the voids of the grain boundaries. Bombardment by the Ar{sup +} ion-beams effectively improved the corrosion resistance of the IBAD-Al-coating.

  12. Properties of amorphous silicon thin films synthesized by reactive particle beam assisted chemical vapor deposition

    International Nuclear Information System (INIS)

    Choi, Sun Gyu; Wang, Seok-Joo; Park, Hyeong-Ho; Jang, Jin-Nyoung; Hong, MunPyo; Kwon, Kwang-Ho; Park, Hyung-Ho

    2010-01-01

    Amorphous silicon thin films were formed by chemical vapor deposition of reactive particle beam assisted inductively coupled plasma type with various reflector bias voltages. During the deposition, the substrate was heated at 150 o C. The effects of reflector bias voltage on the physical and chemical properties of the films were systematically studied. X-ray diffraction and Raman spectroscopy results showed that the deposited films were amorphous and the films under higher reflector voltage had higher internal energy to be easily crystallized. The chemical state of amorphous silicon films was revealed as metallic bonding of Si atoms by using X-ray photoelectron spectroscopy. An increase in reflector voltage induced an increase of surface morphology of films and optical bandgap and a decrease of photoconductivity.

  13. Carbon nitride films synthesized by NH3-ion-beam-assisted deposition

    International Nuclear Information System (INIS)

    Song, H.W.; Cui, F.Z.; He, X.M.; Li, W.Z.; Li, H.D.

    1994-01-01

    Carbon nitride thin film films have been prepared by NH 3 -ion-beam-assisted deposition with bombardment energies of 200-800 eV at room temperature. These films have been characterized by transmission electron microscopy. Auger electron spectroscopy and x-ray photoelectron spectroscopy for chemical analysis. It was found that the structure of the films varied with the bombardment energy. In the case of 400 eV bombardment, the tiny crystallites immersed on an amorphous matrix were identified to be β-C 3 N 4 . X-ray photoelectron spectroscopy indicated that some carbon atoms and nitrogen atoms form unpolarized covalent bonds in these films. (Author)

  14. Effect of ion beam bombardment on the carbide in M2 steel modified by ion-beam-assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.Y.; Wang, F.J.; Wang, Y.K. (Dept. of Materials Engineering, Dalian Univ. of Technology (China)); Ma, T.C. (National Lab. of Materials Modification by Beam Three, Dalian (China))

    1991-10-30

    Transmission electron microscopy was used to study the effect of nitrogen ion bombardment with different doses on the carbides in M2 high speed steel as the nitrogen ions penetrated into the nitride films during ion-beam-assisted deposition. With different doses of nitrogen, alterations in the morphological characteristics of the carbide M6C at the interface were observed. With lower doses, knitting-like contrast within the carbide showed subboundary structure defects in M6C. With increasing dose, the substructure defects were broken up into small fragments owing to heavy bombardment. The microstructures of carbides at the interface damaged by nitrogen ions are discussed in detail. (orig.).

  15. Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

    International Nuclear Information System (INIS)

    Shima, Yukari; Hasuyama, Hiroki; Kondoh, Toshiharu; Imaoka, Yasuo; Watari, Takanori; Baba, Koumei; Hatada, Ruriko

    1999-01-01

    Silicon oxynitride (SiO x N y ) films (0.1-0.7 μm) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N 2 and Ar, or O 2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized

  16. Structural and mechanical properties of hydroxyapatite coatings formed by ion-beam assisted deposition

    Science.gov (United States)

    Zykova, A.; Safonov, V.; Dudin, S.; Yakovin, S.; Donkov, N.; Ghaemi, M. H.; Szkodo, M.; Antoszkiewicz, M.; Szyfelbain, M.; Czaban, A.

    2018-03-01

    The ion-beam assisted deposition (IBAD) is an advanced method capable of producing crystalline coatings at low temperatures. We determined the characteristics of hydroxyapatite Ca10(PO4)6(OH)2 target and coatings formed by IBAD using X-ray photoemission spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and energy dispersive X-ray (EDX). The composition of the coatings’ cross-section and surface was close to those of the target. The XPS spectra showed that the binding energy values of Ca (2p1/2, 2p3/2), P (2p3/2), and O 1s levels are related to the hydroxyapatite phase. The coatings demonstrate an optimal H/E ratio, and a good resistance to scratch tests.

  17. The suggestion of droplets generation prevention method of CNx coating by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Yagi, Yuji; Tokoroyama, Takayuki; Kousaka, Hiroyuki; Umehara, Noritsugu; Fuwa, Yoshio; Manabe, Kazuyoshi

    2013-01-01

    It has been reported that the carbon nitride (CNx) coating was the super-low friction in which friction coefficient was less than 0.01, and it attracts attention as a high wear resistance and low friction material. When synthesizing a CNx coating with Ion Beam Assisted Deposition (IBAD) method, it was clear that the small asperities called droplets was generated onto the CNx coating surface with increasing thickness, and these droplets generated high friction. Therefore, it is necessary to clarify droplets generation mechanism to reduce droplets. To establish optimal coating conditions for controlling droplets were clarified by paying attention to the energy of an electron beam and the shape of a carbon target. First of all, 300 nm thickness CNx coatings were synthesized with five different filament current densities to clarify the relationship between the filament current density and droplet heights. Secondly, the effect of carbon target shape on droplets generation was confirmed with normal and processed carbon target. Finally, friction coefficient of these surfaces was measured by friction tests under PAO lubrication. (author)

  18. Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

    Science.gov (United States)

    Rauschenbach, Bernd; Lotnyk, Andriy; Neumann, Lena; Poppitz, David; Gerlach, Jürgen W

    2017-06-23

    The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.

  19. Low resistivity Pt interconnects developed by electron beam assisted deposition using novel gas injector system

    International Nuclear Information System (INIS)

    Dias, R J; Romano-Rodriguez, A; O'Regan, C; Holmes, J D; Petkov, N; Thrompenaars, P; Mulder, J J L

    2012-01-01

    Electron beam-induced deposition (EBID) is a direct write process where an electron beam locally decomposes a precursor gas leaving behind non-volatile deposits. It is a fast and relatively in-expensive method designed to develop conductive (metal) or isolating (oxide) nanostructures. Unfortunately the EBID process results in deposition of metal nanostructures with relatively high resistivity because the gas precursors employed are hydrocarbon based. We have developed deposition protocols using novel gas-injector system (GIS) with a carbon free Pt precursor. Interconnect type structures were deposited on preformed metal architectures. The obtained structures were analysed by cross-sectional TEM and their electrical properties were analysed ex-situ using four point probe electrical tests. The results suggest that both the structural and electrical characteristics differ significantly from those of Pt interconnects deposited by conventional hydrocarbon based precursors, and show great promise for the development of low resistivity electrical contacts.

  20. Improved stability of organic light-emitting diode with aluminum cathodes prepared by ion beam assisted deposition

    Directory of Open Access Journals (Sweden)

    Soon Moon Jeong, Deuk Yeon Lee, Won Hoe Koo, Sang Hun Choi, Hong Koo Baik, Se-Jong Lee and Kie Moon Song

    2005-01-01

    Full Text Available We have fabricated highly stable organic electroluminescent devices based on spin-coated poly-p-phenylene-vynylene (PPV thin films. The electrical properties of aluminum cathode, prepared by ion beam assisted deposition, on PPV have been investigated and compared to those by thermal evaporation. Although energetic particles of Al assisted by Ar+ ion may damage the organic material, I–V–L characteristics are improved by applying thin Al buffer layer. In addition, a dense Al cathode inhibits the permeation of H2O and O2 into PPV film through pinhole defects, and thus retards dark spot growth. It may be deduced from highly packed structure of Al cathode with an increase in the contact area between Al and PPV that reduce the contact resistance. In conclusion, the lifetime of organic light-emitting device (OLED has been extended effectively by dense Al film through ion beam assisted deposition process.

  1. Ion beams application to modification of surface layer of solids with particular regard to IBAD method - ion beam assisted deposition realized in the INP; Zastosowanie wiazek jonowych do modyfikowania warstwy wierzchniej cial stalych, ze szczegolnym uwzglednieniem metody IBAD - Ion Beam Assisted Deposition, realizowanej w IFJ

    Energy Technology Data Exchange (ETDEWEB)

    Drwiega, M.; Lipinska, E.

    1992-12-31

    The different trends in ion engineering such as: dynamic ion mixing, ionized cluster beam deposition and ion beam assisted deposition are described. Some examples of properties of surface coatings are given and their applications are presented. The future of ion engineering is described. 48 refs, 12 figs, 4 tabs.

  2. Ion - beam assisted process in the physical deposition of organic thin layers

    Energy Technology Data Exchange (ETDEWEB)

    Dimov, D; Spassova, E; Assa, J; Danev, G [Acad. J .Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl.109, 1113 Sofia (Bulgaria); Georgiev, A, E-mail: dean@clf.bas.b [University of Chemical Technology and Metallurgy, 8 Kl. Ohridski Blvd., 1756 Sofia (Bulgaria)

    2010-04-01

    A novel method was developed for physical deposition of thin polyimide layers by applying an argon plasma assisted process. The influence was investigated of the plasma on the combined molecular flux of the two thermally evaporated precursors - oxydianiline and pyromellitic dianhydride. The effects observed on the properties of the deposited films are explained with the increased energy of the precursor molecules resulting from the ion-molecular collisions. As could be expected, molecules with higher energy possess higher mobility and thus determine the modification of the films structure and their electrical properties.

  3. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    International Nuclear Information System (INIS)

    Krumov, E.; Starbov, N.; Starbova, K.; Perea, A.; Solis, J.

    2009-01-01

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO 2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO 2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO 2 based thin film catalysts is discussed.

  4. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krumov, E., E-mail: emodk@clf.bas.bg [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Starbov, N.; Starbova, K. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Perea, A.; Solis, J. [Instituto de Optica ' Daza de Valdes' , CSIC, 28006 Madrid (Spain)

    2009-11-15

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO{sub 2} ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO{sub 2} films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO{sub 2} based thin film catalysts is discussed.

  5. Corrosion-resistant titanium nitride coatings formed on stainless steel by ion-beam-assisted deposition

    International Nuclear Information System (INIS)

    Baba, K.; Hatada, R.

    1994-01-01

    Titanium films 70nm thick were deposited on austenitic type 316L stainless steel substrates, and these specimens were irradiated with titanium ions of energy 70kV at a fluence of 1x10 17 ioncm -2 , using a metal vapor vacuum arc (MEVVA) IV metallic ion source at room temperature. After irradiation, titanium nitride (TiN) films were deposited by titanium evaporation and simultaneous irradiation by a nitrogen ion beam, with transport ratios of Ti to N atoms from 0.5 to 10.0 and an ion acceleration voltage of 2kV. The preferred orientation of the TiN films varied from left angle 200 right angle to left angle 111 right angle normal to the surface when the transport ratio was increased. With the help of Auger electron spectroscopy, interfacial mixing was verified. Nitrogen atoms were present in the state of titanium nitride for all transport ratios from 0.5 up to 10.0. However, the chemical bonding state of titanium changed from titanium nitride to the metallic state with increasing transport ratio Ti/N. The corrosion behavior was evaluated in an aqueous solution of sulfuric acid saturated with oxygen, using multisweep cyclic voltammetry measurements. Thin film deposition of pure titanium and titanium implantation prior to TiN deposition have beneficial effects on the suppression of transpassive chromium dissolution. ((orig.))

  6. Generation of electrical defects in ion beam assisted deposition of Cu(In,Ga)Se2 thin film solar cells

    International Nuclear Information System (INIS)

    Zachmann, H.; Puttnins, S.; Daume, F.; Rahm, A.; Otte, K.

    2011-01-01

    Thin films of Cu(In,Ga)Se 2 (CIGS) absorber layers for thin film solar cells have been manufactured on polyimide foil in a low temperature, ion beam assisted co-evaporation process. In the present work a set of CIGS thin films was produced with varying selenium ion energy. Solar cell devices have been manufactured from the films and characterized via admittance spectroscopy and capacitance-voltage profiling to determine the influence of the selenium ion energy on the electric parameters of the solar cells. It is shown that the impact of energetic selenium ions in the CIGS deposition process leads to a change in the activation energy and defect density and also in the spatial distribution of electrically active defects. For the interpretation of the results two defect models are taken into account.

  7. Highly flexible transparent and conductive ZnS/Ag/ZnS multilayer films prepared by ion beam assisted deposition

    Science.gov (United States)

    Yu, Zhinong; Leng, Jian; Xue, Wei; Zhang, Ting; Jiang, Yurong; Zhang, Jie; Zhang, Dongpu

    2012-01-01

    ZnS/Ag/ZnS (ZAZ) multilayer films were prepared on polyethene terephthalate (PET) by ion beam assisted deposition at room temperature. The structural, optical and electrical characteristics of ZAZ multilayers dependent on the thickness of silver layer were investigated. The ZAZ multilayers exhibit a low sheet resistance of about 10 Ω/sq., a high transmittance of 92.1%, and the improved resistance stabilities when subjected to bending. When the inserted Ag thickness is over 12 nm, the ZAZ multilayers show good resistance stabilities due to the existence of a ductile Ag metal layer. The results suggest that ZAZ film has better optoelectrical and anti-deflection characteristics than conventional indium tin oxide (ITO) single layer.

  8. Mechanical and tribological properties of carbon thin film with tungsten interlayer prepared by Ion beam assisted deposition

    Czech Academy of Sciences Publication Activity Database

    Vlčák, P.; Černý, F.; Tolde, Z.; Sepitka, J.; Gregora, Ivan; Daniš, S.

    2013-01-01

    Roč. 2013, FEB (2013) ISSN 2314-4874 Institutional support: RVO:68378271 Keywords : carbon coatings * ion beam deposition * XRD * nanoindentation Subject RIV: BM - Solid Matter Physics ; Magnetism http://dx.doi.org/10.1155/2013/630156

  9. Enhanced activity and interfacial durability study of ultra low Pt based electrocatalysts prepared by ion beam assisted deposition (IBAD) method

    International Nuclear Information System (INIS)

    Ramaswamy, N.; Arruda, T.M.; Wen, W.; Hakim, N.; Saha, M.; Gulla, A.; Mukerjee, S.

    2009-01-01

    Ultra low loading noble metal (0.04-0.12 mg Pt /cm 2 ) based electrodes were obtained by direct metallization of non-catalyzed gas diffusion layers via dual ion beam assisted deposition (IBAD) method. Fuel cell performance results reported earlier indicate significant improvements in terms of mass specific power density of 0.297 g Pt /kW with 250 A thick IBAD deposit (0.04 mg Pt /cm 2 for a total MEA loading of 0.08 mg Pt /cm 2 ) at 0.65 V in contrast to the state of the art power density of 1.18 g Pt /kW using 1 mg Pt(MEA) /cm 2 at 0.65 V. In this article we report the peroxide radical initiated attack of the membrane electrode assembly utilizing IBAD electrodes in comparison to commercially available E-TEK (now BASF Fuel Cell GmbH) electrodes and find the pathway of membrane degradation as well. A novel segmented fuel cell is used for this purpose to relate membrane degradation to peroxide generation at the electrode/electrolyte interface by means of systematic pre and post analyses of the membrane are presented. Also, we present the results of in situ X-ray absorption spectroscopy (XAS) experiments to elucidate the structure/property relationships of these electrodes that lead to superior performance in terms of gravimetric power density obtained during fuel cell operation.

  10. In-plane aligned YBCO tape on textured YSZ buffer layer deposited on stainless steel substrate by laser ablation only with O{sup +} ion beam assistance

    Energy Technology Data Exchange (ETDEWEB)

    Huang Xintang [Huazhong Univ. of Sci. and Technol., Wuhan (China). Nat. Lab. of Laser Technol.]|[Huazhong Normal Univ., Wuhan, HB (China). Dept. of Physics; Wang Youqing; Wang Qiuliang; Chen Qingming [Huazhong Univ. of Sci. and Technol., Wuhan (China). Nat. Lab. of Laser Technol.

    1999-08-16

    In this paper we have prepared YSZ buffer layers on stainless steel substrates by laser ablation only with O{sup +} ion beam assistance and YBCO films on YSZ/steel consequently. The relevant parameters of YSZ and YBCO film deposition are indicated. (orig.) 8 refs.

  11. In-plane aligned YBCO tape on textured YSZ buffer layer deposited on stainless steel substrate by laser ablation only with O+ ion beam assistance

    International Nuclear Information System (INIS)

    Huang Xintang; Huazhong Normal Univ., Wuhan, HB; Wang Youqing; Wang Qiuliang; Chen Qingming

    1999-01-01

    In this paper we have prepared YSZ buffer layers on stainless steel substrates by laser ablation only with O + ion beam assistance and YBCO films on YSZ/steel consequently. The relevant parameters of YSZ and YBCO film deposition are indicated. (orig.)

  12. Simple Mathematical Models of High Energy Ion Beam Assisted Deposition Concentration Profiles in Binary Thin Films

    Czech Academy of Sciences Publication Activity Database

    Černý, F.; Konvičková, S.; Jech, V.; Hnatowicz, Vladimír

    2011-01-01

    Roč. 11, č. 10 (2011), s. 8936-8942 ISSN 1533-4880 R&D Projects: GA MŠk(CZ) LC06041 Institutional research plan: CEZ:AV0Z10480505 Keywords : SILICON-NITRIDE FILMS * ENHANCED DEPOSITION * IBAD-PROCESS Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.563, year: 2011

  13. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Youroukov, S; Kitova, S; Danev, G [Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 113 Sofia (Bulgaria)], E-mail: skitova@clf.bas.bg

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO{sub 2} together with concurrent bombardment with low energy N{sub 2}{sup +} ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N{sub 2}{sup +} ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV)

  14. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Science.gov (United States)

    Youroukov, S.; Kitova, S.; Danev, G.

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

  15. Synthesis and corrosion properties of silicon nitride films by ion beam assisted deposition

    Science.gov (United States)

    Baba, K.; Hatada, R.; Emmerich, R.; Enders, B.; Wolf, G. K.

    1995-12-01

    Silicon nitride films SiN x were deposited on 316L austenitic stainless steel substrates by silicon evaporation and simultaneous nitrogen ion irradiation with an acceleration voltage of 2 kV. In order to study the influence of the nitrogen content on changes in stoichiometry, structure, morphology, thermal oxidation behaviour and corrosion behaviour, the atom to ion transport ratio was systematically varied. The changes of binding states and the stoichiometry were evaluated with XPS and AES analysis. A maximum nitrogen content was reached with a {Si}/{N} transport ratio lower than 2. The films are chemically inert when exposed to laboratory atmosphere up to a temperature of more than 1000°C. XRD and SEM measurements show amorphous and featureless films for transport ratios {Si}/{N} from 1 up to 10. The variation of the corrosion behaviour of coated stainless steel substrates in sulphuric acid and hydrochloric acid shows a minimum at medium transport ratios. This goes parallel with changes in porosity and adhesion. Additional investigations showed that titanium implantation as an intermediate step improves the corrosion resistance considerably.

  16. Protective Sliding Carbon-Based Nanolayers Prepared by Argon or Nitrogen Ion-Beam Assisted Deposition on Ti6Al4V Alloy

    Directory of Open Access Journals (Sweden)

    Petr Vlcak

    2016-01-01

    Full Text Available The microstructure and the surface properties of samples coated by carbon-based nanolayer were investigated in an effort to increase the surface hardness and reduce the coefficient of friction of the Ti6Al4V alloy. Protective carbon-based nanolayers were fabricated by argon or nitrogen ion-beam assisted deposition at ion energy of 700 eV on Ti6Al4V substrates. The Raman spectra indicated that nanolayers had a diamond-like carbon character with sp2 rich bonds. The TiC and TiN compounds formed in the surface area were detected by X-ray diffraction. Nanoscratch tests showed increased adhesion of a carbon-based nanolayer deposited with ion assistance in comparison with a carbon nanolayer deposited without ion assistance. The results showed that argon ion assistance leads to greater nanohardness than a sample coated by a carbon-based nanolayer with nitrogen ion assistance. A more than twofold increase in nanohardness and a more than fivefold decrease in the coefficient of friction were obtained for samples coated by a carbon-based nanolayer with ion assistance, in comparison with the reference sample.

  17. Role of yttria-stabilized zirconia produced by ion-beam-assisted deposition on the properties of RuO2 on SiO2/Si

    International Nuclear Information System (INIS)

    Jia, Q.X.; Arendt, P.; Groves, J.R.; Fan, Y.; Roper, J.M.; Foltyn, S.R.

    1998-01-01

    Highly conductive biaxially textured RuO 2 thin films were deposited on technically important SiO 2 /Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO 2 on SiO 2 /Si. The biaxially oriented RuO 2 had a room-temperature resistivity of 37 μΩ-cm and residual resistivity ratio above 2. We then deposited Ba 0.5 Sr 0.5 TiO 3 thin films on RuO 2 /IBAD-YSZ/SiO 2 /Si. The Ba 0.5 Sr 0.5 TiO 3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz. copyright 1998 Materials Research Society

  18. Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation

    Directory of Open Access Journals (Sweden)

    Chin-Chiuan Kuo

    2010-01-01

    Full Text Available Indium molybdenum oxide (IMO films were deposited onto the polyethersulfone (PES substrates by ion-beam-assisted evaporation (IBAE deposition at low temperature in this study. The effects of film thickness on their optical and electrical properties were investigated. The results show that the deposited IMO films exhibit a preferred orientation of B(222. The electrical resistivity of the deposited film initially reduces then subsequently increases with film thickness. The IMO film with the lowest resistivity of 7.61 × 10−4 ohm-cm has been achieved when the film thickness is 120 nm. It exhibits a satisfactory surface roughness pv of 8.75 nm and an average visible transmittance of 78.7%.

  19. Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

    International Nuclear Information System (INIS)

    Stepina, N.P.; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V.

    2008-01-01

    A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO 2 , have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO 2 /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots

  20. The Effect of Annealing on the Structural and Optical Properties of Titanium Dioxide Films Deposited by Electron Beam Assisted PVD

    Directory of Open Access Journals (Sweden)

    Yaser M. Abdulraheem

    2013-01-01

    Full Text Available Titanium dioxide thin films were deposited on crystalline silicon substrates by electron beam physical vapor deposition. The deposition was performed under vacuum ranging from 10−5 to 10−6 Torr without process gases, resulting in homogeneous TiO2-x layers with a thickness of around 100 nm. Samples were then annealed at high temperatures ranging from 500°C to 800°C for 4 hours under nitrogen, and their structural and optical properties along with their chemical structure were characterized before and after annealing. The chemical and structural characterization revealed a substoichiometric TiO2-x film with oxygen vacancies, voids, and an interface oxide layer. It was found from X-ray diffraction that the deposited films were amorphous and crystallization to anatase phase occurred for annealed samples and was more pronounced for annealing temperatures above 700°C. The refractive index obtained through spectroscopic ellipsometry ranged between 2.09 and 2.37 in the wavelength range, 900 nm to 400 nm for the as-deposited sample, and jumped to the range between 2.23 and 2.65 for samples annealed at 800°C. The minimum surface reflectance changed from around 0.6% for the as-deposited samples to 2.5% for the samples annealed at 800°C.

  1. Tool steel ion beam assisted nitrocarburization

    International Nuclear Information System (INIS)

    Zagonel, L.F.; Alvarez, F.

    2007-01-01

    The nitrocarburization of the AISI-H13 tool steel by ion beam assisted deposition is reported. In this technique, a carbon film is continuously deposited over the sample by the ion beam sputtering of a carbon target while a second ion source is used to bombard the sample with low energy nitrogen ions. The results show that the presence of carbon has an important impact on the crystalline and microstructural properties of the material without modification of the case depth

  2. In-plane aligned YBCO film on textured YSZ buffer layer deposited on NiCr alloy tape by laser ablation with only O+ ion beam assistance

    International Nuclear Information System (INIS)

    Xin Tang Huang

    2000-01-01

    High critical current density and in-plane aligned YBa 2 Cu 3 O 7-x (YBCO) film on a textured yttria-stabilized zirconia (YSZ) buffer layer deposited on NiCr alloy (Hastelloy c-275) tape by laser ablation with only O + ion beam assistance was fabricated. The values of the x-ray phi-scan full width at half-maximum (FWHM) for YSZ(202) and YBCO(103) are 18 deg. and 11 deg., respectively. The critical current density of YBCO film is 7.9 x 105 A cm -2 at liquid nitrogen temperature and zero field, and its critical temperature is 90 K. (author)

  3. Improving the Characteristics of Sn-doped In{sub 2}O{sub 2} Grown at Room Temperature with Oxygen Radical-Assisted Electron Beam Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Min-Suk [Korea Institute of Industrial Technology, Gwangju (Korea, Republic of); Seo, Inseok [Chonbuk National University, Jeonju (Korea, Republic of)

    2017-07-15

    Sn-doped In{sub 2}O{sub 3} (Indium tin oxide, ITO) is widely utilized in numerous industrial applications due to its high electrical conductivity and high optical transmittance in the visible region. High quality ITO thin-films have been grown at room temperature by oxygen radical assisted e-beam evaporation without any post annealing or plasma treatment. The introduction of oxygen radicals during e-beam growth greatly improved the surface morphology and structural properties of the ITO films. The obtained ITO film exhibits higher carrier mobility of 43.2 cm{sup 2}/V·s and larger optical transmittance of 84.6%, resulting in a higher figure of merit of ∼ 2.8 × 10{sup −2} Ω{sup −1}, which are quite comparable to the ITO film deposited by conventional e-beam evaporation. These results show that ITO films grown by oxygen radical assisted e-beam evaporation at room temperature with high optical transmittance and high electron conductivity have a great potential for organic optoelectronic devices.

  4. Improving the characteristics of Sn-doped In2O2 grown at room temperature with oxygen radical-assisted electron beam deposition

    Science.gov (United States)

    Oh, Min-Suk; Seo, Inseok

    2017-07-01

    Sn-doped In2O3 (Indium tin oxide, ITO) is widely utilized in numerous industrial applications due to its high electrical conductivity and high optical transmittance in the visible region. High quality ITO thin-films have been grown at room temperature by oxygen radical assisted e-beam evaporation without any post annealing or plasma treatment. The introduction of oxygen radicals during e-beam growth greatly improved the surface morphology and structural properties of the ITO films. The obtained ITO film exhibits higher carrier mobility of 43.2 cm2/V·s and larger optical transmittance of 84.6%, resulting in a higher figure of merit of ˜ 2.8 × 10-2 Ω-1, which are quite comparable to the ITO film deposited by conventional e-beam evaporation. These results show that ITO films grown by oxygen radical assisted e-beam evaporation at room temperature with high optical transmittance and high electron conductivity have a great potential for organic optoelectronic devices.

  5. Room temperature photoluminescence from In{sub x}Al{sub (1−x)}N films deposited by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kong, W., E-mail: wei.kong@duke.edu; Jiao, W. Y.; Kim, T. H.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Mohanta, A. [Oak Ridge Institute for Science and Education, Research Participation Program, U.S. Army Aviation and Missile Research, Development and Engineering Center (AMRDEC), Redstone Arsenal, Alabama 35898 (United States); Roberts, A. T. [Charles Bowden Research Lab, Army Aviation and Missile RD and E Center, Redstone Arsenal, Alabama 35898 (United States); Fournelle, J. [Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States); Losurdo, M. [Plasma Chemistry Research Center-CNR, via Orabona, 4-70126 Bari (Italy); Everitt, H. O. [Charles Bowden Research Lab, Army Aviation and Missile RD and E Center, Redstone Arsenal, Alabama 35898 (United States); Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2014-09-29

    InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of In{sub x}Al{sub (1−x)}N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

  6. Growth modes and epitaxy of FeAl thin films on a-cut sapphire prepared by pulsed laser and ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Xiang; Trautvetter, Moritz; Ziemann, Paul [Institut für Festkörperphysik, Universität Ulm, Albert-Einstein-Allee 11, 89069 Ulm (Germany); Wiedwald, Ulf [Institut für Festkörperphysik, Universität Ulm, Albert-Einstein-Allee 11, 89069 Ulm (Germany); Fakultät für Physik, Universität Duisburg-Essen, Lotharstraße 1, 47057 Duisburg (Germany)

    2014-01-14

    FeAl films around equiatomic composition are grown on a-cut (112{sup ¯}0) sapphire substrates by ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD) at ambient temperature. Subsequent successive annealing is used to establish chemical order and crystallographic orientation of the films with respect to the substrate. We find a strongly [110]-textured growth for both deposition techniques. Pole figures prove the successful preparation of high quality epitaxial films by PLD with a single in-plane orientation. IBAD-grown films, however, exhibit three in-plane orientations, all of them with broad angular distributions. The difference of the two growth modes is attributed to the existence of a metastable intermediate crystalline orientation as concluded from nonassisted sputter depositions at different substrate temperatures. The formation of the chemically ordered crystalline B2 phase is accompanied by the expected transition from ferromagnetic to paramagnetic behavior of the films. In accordance with the different thermally induced structural recovery, we find a step-like magnetic transition to paramagnetic behavior after annealing for 1 h at T{sub A} = 300 °C for IBAD deposition, while PLD-grown films show a gradual decrease of ferromagnetic signals with rising annealing temperatures.

  7. Characterisation of Pristine and Recoated electron beam evaporation plasma-assisted physical vapour deposition Cr-N coatings on AISI M2 steel and WC-Co substrates

    International Nuclear Information System (INIS)

    Avelar-Batista, J.C.; Spain, E.; Housden, J.; Fuentes, G.G.; Rebole, R.; Rodriguez, R.; Montala, F.; Carreras, L.J.; Tate, T.J.

    2005-01-01

    This paper is focussed on the characterisation of electron beam evaporation plasma-assisted physical vapour deposition Cr-N coatings deposited on AISI M2 steel and hardmetal (K10) substrates in two different conditions: Pristine (i.e., coated) and Recoated (i.e., stripped and recoated). Analytical methods, including X-ray diffraction (XRD), scanning electron microscopy, scratch adhesion and pin-on-disc tests were used to evaluate several coating properties. XRD analyses indicated that both Pristine and Recoated coatings consisted of a mixture of hexagonal Cr 2 N and cubic CrN, regardless of substrate type. For the M2 steel substrate, only small differences were found in terms of coating phases, microstructure, adhesion, friction and wear coefficients between Pristine and Recoated. Recoated on WC-Co (K10) exhibited a less dense microstructure and significant inferior adhesion compared to Pristine on WC-Co (K10). The wear coefficient of Recoated on WC-Co was 100 times higher than those exhibited by all other specimens. The results obtained confirm that the stripping process did not adversely affect the Cr-N properties when this coating was deposited onto M2 steel substrates, but it is clear from the unsatisfactory tribological performance of Recoated on WC-Co that the stripping process is unsuitable for hardmetal substrates

  8. Ion beam assisted film growth

    CERN Document Server

    Itoh, T

    2012-01-01

    This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

  9. High performance polymer electrolyte fuel cells with ultra-low Pt loading electrodes prepared by dual ion-beam assisted deposition

    International Nuclear Information System (INIS)

    Saha, Madhu Sudan; Gulla, Andrea F.; Allen, Robert J.; Mukerjee, Sanjeev

    2006-01-01

    Ultra-low pure Pt-based electrodes (0.04-0.12 mg Pt /cm 2 ) were prepared by dual ion-beam assisted deposition (dual IBAD) method on the surface of a non-catalyzed gas diffusion layer (GDL) substrate. Film thicknesses ranged between 250 and 750 A, these are compared with a control, a conventional Pt/C (1.0 mg Pt(MEA) /cm 2 , E-TEK). The IBAD electrode constituted a significantly different morphology, where low density Pt deposits (largely amorphous) were formed with varying depths of penetration into the gas diffusion layer, exhibiting a gradual change towards increasing crystalline character (from 250 to 750 A). Mass specific power density of 0.297 g Pt /kW is reported with 250 A IBAD deposit (0.04 mg Pt /cm 2 for a total MEA loading of 0.08 mg Pt /cm 2 ) at 0.65 V. This is contrasted with the commercial MEA with a loading of 1 mg Pt(MEA) /cm 2 where mass specific power density obtained was 1.18 g Pt /kW (at 0.65 V), a value typical of current state of the art commercial electrodes containing Pt/C. The principal shortcoming in this effort is the area specific power density which was in the range of 0.27-0.43 W/cm 2 (for 250-750 A IBAD) at 0.65 V, hence much below the automotive target value of 0.8-0.9 W/cm 2 (at 0.65 V). An attempt to mitigate these losses is reported with the use of patterning. In this context a series of patterns ranging from 45 to 80% Pt coverage were used in conjunction with a hexagonal hole geometry. Up to 30% lowering of mass transport losses were realized

  10. Stoichiometry and characterization of aluminum oxynitride thin films grown by ion-beam-assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zabinski, J.S. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States); Hu, J.J. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)], E-mail: Jianjun.Hu@WPAFB.AF.MIL; Bultman, J.E. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States); Pierce, N.A. [Propulsion Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States); Voevodin, A.A. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2008-07-31

    Oxides are inherently stable in air at elevated temperatures and may serve as wear resistant matrices for solid lubricants. Aluminum oxide is a particularly good candidate for a matrix because it has good diffusion barrier properties and modest hardness. Most thin film deposition techniques that are used to grow alumina require high temperatures to impart crystallinity. Crystalline films are about twice as hard as amorphous ones. Unfortunately, the mechanical properties of most engineering steels are degraded at temperatures above 250-350 deg. C. This work is focused on using energetic reactive ion bombardment during simultaneous pulsed laser deposition to enhance film crystallization at low temperatures. Alumina films were grown at several background gas pressures and temperatures, with and without Ar ion bombardment. The films were nearly stoichiometric except for depositions in vacuum. Using nitrogen ion bombardment, nitrogen was incorporated into the films and formed the Al-O-N matrix. Nitrogen concentration could be controlled through selection of gas pressure and ion energy. Crystalline Al-O-N films were grown at 330 deg. C with a negative bias voltage to the substrate, and showed improved hardness in comparison to amorphous films.

  11. Networks of ultra-fine Ag nanocrystals in a Teflon AF (registered) matrix by vapour phase e-beam-assisted deposition

    International Nuclear Information System (INIS)

    Biswas, A; Bayer, I S; Marken, B; Pounds, T D; Norton, M G

    2007-01-01

    We have fabricated nanocomposite thin films comprising silver (Ag) nanoparticles dispersed in a Teflon AF (registered) polymer matrix using electron-beam-assisted physical vapour deposition. Four different Ag nanoparticle volume fillings (20%, 35%, 70% and 75%) were achieved by varying the relative metal-polymer evaporation rates with the formation of highly crystalline Ag nanoparticles regardless of the filling ratio. The present fabrication technique allowed full control over dispersion uniformity of nanoparticles in the polymer network. At 20% and 35% metal volume fillings, the nanocomposite film morphology consists of a uniformly dispersed assembly of equiaxed isolated Ag nanoparticles. At higher metal volume fractions the nanocomposite structures displayed two different and unique Ag nanoparticle arrangements within the polymer matrix. In particular, at 70% metal filling, the formation of irregularly shaped clusters of individually assembled nanocrystals was observed. At a slightly higher volume filling (75%), larger irregularly shaped Ag nanocrystals that appeared to be the result of coalescence and grain growth were observed. Finally, a composite theory developed by Tandon and Weng was used to estimate various elastic properties of the nanocomposite films. At high metal filling, the reinforcing effect of the Ag nanoparticles was reflected as approximately a sixfold increase in the elastic modulus compared to the virgin polymer film. Possible applications of such ultra-fine metal nanoparticles networks are discussed

  12. Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO{sub 2} for non-volatile memory device

    Energy Technology Data Exchange (ETDEWEB)

    Stepina, N.P. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)], E-mail: nstepina@mail.ru; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)

    2008-11-03

    A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO{sub 2}, have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO{sub 2} /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots.

  13. Effect of nitrogen environment on NdFeB thin films grown by radio frequency plasma beam assisted pulsed laser deposition

    International Nuclear Information System (INIS)

    Constantinescu, C.; Patroi, E.; Codescu, M.; Dinescu, M.

    2013-01-01

    Highlights: ► NdFeB thin films grown by PLD, in vacuum and in nitrogen, are presented. ► Nitrogen inclusion in thin film structures is related to improved coercitivity. ► Magnetical, optical and morphological properties of the thin films are discussed. - Abstract: NdFeB is a very attractive material for applications in electrical engineering and in electronics, for high-tech devices where high coercive field and high remanence are needed. In this paper we demonstrate that the deposition of nitrogen doped NdFeB thin films by pulsed laser deposition, in the presence of a nitrogen radiofrequency plasma beam, exhibit improved magnetic properties and surface morphology, when compared to vacuum deposited NdFeB layers. A Nd:YAG pulsed laser (3ω and 4ω) was focused on a NdFeB target, in vacuum, or in the presence of a nitrogen plasma beam. Substrate temperature (RT-850 °C), nitrogen gas pressure, and radiofrequency power (75–150 W), were particularly varied. The thin films were investigated by means of X-ray diffraction, atomic force microscopy, scanning electron microscopy, spectroscopic-ellipsometry, and vibrating sample magnetometry.

  14. Effect of nitrogen environment on NdFeB thin films grown by radio frequency plasma beam assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Constantinescu, C., E-mail: catalin.constantinescu@inflpr.ro [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor bd., Magurele, RO-077125, Bucharest (Romania); Patroi, E.; Codescu, M. [National Institute for Research and Development in Electrical Engineering - Advanced Research, 313 Spl. Unirii, Sector 3, RO-030138, Bucharest (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor bd., Magurele, RO-077125, Bucharest (Romania)

    2013-03-01

    Highlights: Black-Right-Pointing-Pointer NdFeB thin films grown by PLD, in vacuum and in nitrogen, are presented. Black-Right-Pointing-Pointer Nitrogen inclusion in thin film structures is related to improved coercitivity. Black-Right-Pointing-Pointer Magnetical, optical and morphological properties of the thin films are discussed. - Abstract: NdFeB is a very attractive material for applications in electrical engineering and in electronics, for high-tech devices where high coercive field and high remanence are needed. In this paper we demonstrate that the deposition of nitrogen doped NdFeB thin films by pulsed laser deposition, in the presence of a nitrogen radiofrequency plasma beam, exhibit improved magnetic properties and surface morphology, when compared to vacuum deposited NdFeB layers. A Nd:YAG pulsed laser (3{omega} and 4{omega}) was focused on a NdFeB target, in vacuum, or in the presence of a nitrogen plasma beam. Substrate temperature (RT-850 Degree-Sign C), nitrogen gas pressure, and radiofrequency power (75-150 W), were particularly varied. The thin films were investigated by means of X-ray diffraction, atomic force microscopy, scanning electron microscopy, spectroscopic-ellipsometry, and vibrating sample magnetometry.

  15. Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Jian-ping [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Fu, Zhi-qiang, E-mail: fuzq@cugb.edu.cn [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Xiao-peng [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Yue, Wen; Wang, Cheng-biao [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China)

    2014-10-30

    Highlights: • AlN films were fabricated by dual ion beam sputtering. • Chemical bond status and phase composition of the films were studied by XPS and XRD. • Optical constants were measured by spectroscopic ellipsometry. • Influence of ion/atom arrival ratio on the films was studied. - Abstract: In order to improve the optical properties of AlN films, the influence of the ion/atom arrival ratio on the structure and optical characteristics of AlN films deposited by dual ion beam sputtering was studied by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The films prepared at the ion/atom arrival ratio of 1.4 are amorphous while the crystalline quality is improved with the increase of the ion/atom arrival ratio. The films deposited at the ion/atom arrival ratio of no less than 1.8 have an approximately stoichiometric ratio and mainly consist of aluminum nitride with little aluminum oxynitride, while metallic aluminum component appears in the films deposited at the ion/atom arrival ratio of 1.4. When the ion/atom arrival ratio is not less than 1.8, films are smooth, high transmitting and dense. The films prepared with high ion/atom arrival ratio (≥1.8) display the characteristic of a dielectric. The films deposited at the ion/atom arrival ratio of 1.4 are coarse, opaque and show characteristic of cermet.

  16. Thickness dependence of magnetic properties and giant magneto-impedance effect in amorphous Co{sub 73}Si{sub 12}B{sub 15} thin films prepared by Dual-Ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); BISSE/BUAA-SPNEE joint Laboratory Magnetism and Sperconducting technology on Spacecraft, Beihang University, Beijing 100191 (China); Wang, San-sheng, E-mail: wangssh@buaa.edu.cn [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); BISSE/BUAA-SPNEE joint Laboratory Magnetism and Sperconducting technology on Spacecraft, Beihang University, Beijing 100191 (China); Hu, Teng [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); He, Tong-fu [School of Instrumentation Science and Opto-electronics Engineering, Beihang University, Beijing 100191 (China); Chen, Zi-yu [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Yi, Zhong; Meng, Li-Fei [Science and Technology on Reliability and Environmental Engineering Laboratory, Beijing Institute of Spacecraft Environment Engineering, Beijing 100094 (China); BISSE/BUAA-SPNEE joint Laboratory Magnetism and Sperconducting technology on Spacecraft, Beihang University, Beijing 100191 (China)

    2017-03-15

    Dual-Ion Beam Assisted Deposition is a suitable method for the preparation of giant magneto-impedance (GMI) materials. In this paper, Co{sub 73}Si{sub 12}B{sub 15} thin films with different thicknesses were prepared by Dual-Ion Beam Assisted Deposition, and the influences of film thickness on magnetic properties and GMI effect were investigated. It was found that the asymmetric magnetic hysteresis loop in the prepared Co{sub 73}Si{sub 12}B{sub 15} thin films occurs at ambient temperature, and the shift behavior of hysteresis loop associated with film thickness. With the film thickness increasing, the values of shift field and coercive field and other parameters such as remanence and shift ratio appeared complex variation. At a certain frequency, the large GMI effect is only observed in some films, which have good magnetic properties including low coercivity, low remanence ratio and high shift ratio. The results indicated that the thickness dependence of magnetic properties nonlinearly determined the GMI effect in Co{sub 73}Si{sub 12}B{sub 15} thin films. - Highlights: • The relationship between film thickness and ΔZ/Z, ΔR/R, ΔX/X ratio of CoSiB film exhibits a complex behavior as the film thickness increases from 1.33 to 7.34 µm. The maximum value of GMI ratio is observed when the film thickness was 1.56, 2.48, 3.81 or 7.34 µm. • With the increase of film thickness, the peak frequency shifts to lower frequency, but does not decrease following the t-power law. • The above thickness phenomenon is due to the different magnetic properties of thin films. • The Dual-Ion Beam Assisted Deposition is introduced to prepare the GMI materials.

  17. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    International Nuclear Information System (INIS)

    Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R.M.

    2015-01-01

    Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence

  18. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Aronne, Antonio [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Bloisi, Francesco, E-mail: bloisi@na.infn.it [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy); Calabria, Raffaela; Califano, Valeria [Istituto Motori – CNR, Naples (Italy); Depero, Laura E. [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Fanelli, Esther [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Federici, Stefania [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Massoli, Patrizio [Istituto Motori – CNR, Naples (Italy); Vicari, Luciano R.M. [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy)

    2015-05-01

    Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

  19. Ion-assisted deposition of thin films

    International Nuclear Information System (INIS)

    Barnett, S.A.; Choi, C.H.; Kaspi, R.; Millunchick, J.M.

    1993-01-01

    Recent work on low-energy ion-assisted deposition of epitaxial films is reviewed. Much of the recent interest in this area has been centered on the use of very low ion energies (∼ 25 eV) and high fluxes (> 1 ion per deposited atom) obtained using novel ion-assisted deposition techniques. These methods have been applied in ultra-high vacuum, allowing the preparation of high-purity device-quality semiconductor materials. The following ion-surface interaction effects during epitaxy are discussed: improvements in crystalline perfection during low temperature epitaxy, ion damage, improved homogeneity and properties in III-V alloys grown within miscibility gaps, and changes in nucleation mechanism during heteroepitaxial growth

  20. Comparison of beam deposition for three neutral beam injection codes

    International Nuclear Information System (INIS)

    Wieland, R.M.; Houlberg, W.A.; Mense, A.T.

    1979-03-01

    The three neutral beam injection codes BEAM (Houlberg, ORNL), HOFR (Howe, ORNL), and FREYA (Post, PPPL) are compared with respect to the calculation of the fast ion deposition profile H(r). Only plasmas of circular cross section are considered, with injection confined to the mid-plane of the torus. The approximations inherent in each code are pointed out, and a series of comparisons varying several parameters (beam energy and radius, machine size, and injection angle) shows excellent agreement among all the codes. A cost comparison (execution time and memory requirements) is made which points out the relative merits of each code within the context of incorporation into a plasma transport simulation code

  1. Ion beam deposited epitaxial thin silicon films

    International Nuclear Information System (INIS)

    Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

    1991-01-01

    Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

  2. Ion beam and dual ion beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1994-11-01

    Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

  3. Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1995-02-01

    Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

  4. Patterned electrochemical deposition of copper using an electron beam

    Directory of Open Access Journals (Sweden)

    Mark den Heijer

    2014-02-01

    Full Text Available We describe a technique for patterning clusters of metal using electrochemical deposition. By operating an electrochemical cell in the transmission electron microscope, we deposit Cu on Au under potentiostatic conditions. For acidified copper sulphate electrolytes, nucleation occurs uniformly over the electrode. However, when chloride ions are added there is a range of applied potentials over which nucleation occurs only in areas irradiated by the electron beam. By scanning the beam we control nucleation to form patterns of deposited copper. We discuss the mechanism for this effect in terms of electron beam-induced reactions with copper chloride, and consider possible applications.

  5. Optical properties of YbF3-CaF2 composite thin films deposited by electron-beam evaporation

    Science.gov (United States)

    Wang, Songlin; Mi, Gaoyuan; Zhang, Jianfu; Yang, Chongmin

    2018-03-01

    We studied electron-beam evaporated YbF3-CaF2 composite films on ZnS substrate at different deposition parameters. The optical properties of films have been fitted, the surface roughness have been measured by AFM. The results of experiments indicated that increased the refractive indices, extinction coefficients, and surface roughness at higher deposition rate. The refractive index of composite film deposited by electron-beam evaporation with assisted-ion source was obviously higher than it without assisted-ion source.

  6. Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

    NARCIS (Netherlands)

    Mackus, A.J.M.; Mulders, J.J.L.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2010-01-01

    An approach for direct-write fabrication of high-purity platinum nanostructures has been developed by combining nanoscale lateral patterning by electron beam induced deposition (EBID) with area-selective deposition of high quality material by atomic layer deposition (ALD). Because virtually pure,

  7. Annealing of TiO2 Films Deposited on Si by Irradiating Nitrogen Ion Beams

    International Nuclear Information System (INIS)

    Yokota, Katsuhiro; Yano, Yoshinori; Miyashita, Fumiyoshi

    2006-01-01

    Thin TiO2 films were deposited on Si at a temperature of 600 deg. C by an ion beam assisted deposition (IBAD) method. The TiO2 films were annealed for 30 min in Ar at temperatures below 700 deg. C. The as-deposited TiO2 films had high permittivities such 200 εo and consisted of crystallites that were not preferentially oriented to the c-axis but had an expanded c-axis. On the annealed TiO2 films, permittivities became lower with increasing annealing temperature, and crystallites were oriented preferentially to the (110) plane

  8. Calculation of neutral beam deposition accounting for excited states

    International Nuclear Information System (INIS)

    Gianakon, T.A.

    1992-09-01

    Large-scale neutral-beam auxillary heating of plasmas has led to new plasma operational regimes which are often dominated by fast ions injected via the absorption of an energetic beam of hydrogen neutrals. An accurate simulation of the slowing down and transport of these fast ions requires an intimate knowledge of the hydrogenic neutral deposition on each flux surface of the plasma. As a refinement to the present generation of transport codes, which base their beam deposition on ground-state reaction rates, a new set of routines, based on the excited states of hydrogen, is presented as mechanism for computing the attenuation and deposition of a beam of energetic neutrals. Additionally, the numerical formulations for the underlying atomic physics for hydrogen impacting on the constiuent plasma species is developed and compiled as a numerical database. Sample results based on this excited state model are compared with the ground-state model for simple plasma configurations

  9. Imprint reduction in rotating heavy ions beam energy deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bret, A., E-mail: antoineclaude.bret@uclm.es [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, MS-51, Cambridge, MA 02138 (United States); ETSI Industriales, Universidad Castilla-La Mancha, 13071 Ciudad Real (Spain); Instituto de Investigaciones Energéticas y Aplicaciones Industriales, Campus Universitario de Ciudad Real, 13071 Ciudad Real (Spain); Piriz, A.R., E-mail: Roberto.Piriz@uclm.es [ETSI Industriales, Universidad Castilla-La Mancha, 13071 Ciudad Real (Spain); Instituto de Investigaciones Energéticas y Aplicaciones Industriales, Campus Universitario de Ciudad Real, 13071 Ciudad Real (Spain); Tahir, N.A., E-mail: n.tahir@gsi.de [GSI Darmstadt, Plankstrasse 1, 64291 Darmstadt (Germany)

    2014-01-01

    The compression of a cylindrical target by a rotating heavy ions beam is contemplated in certain inertial fusion schemes or in heavy density matter experiments. Because the beam has its proper temporal profile, the energy deposition is asymmetric and leaves an imprint which can have important consequences for the rest of the process. In this paper, the Fourier components of the deposited ion density are computed exactly in terms of the beam temporal profile and its rotation frequency Ω. We show that for any beam profile of duration T, there exist an infinite number of values of ΩT canceling exactly any given harmonic. For the particular case of a parabolic profile, we find possible to cancel exactly the first harmonic and nearly cancel every other odd harmonics. In such case, the imprint amplitude is divided by 4 without any increase of Ω.

  10. Imprint reduction in rotating heavy ions beam energy deposition

    International Nuclear Information System (INIS)

    Bret, A.; Piriz, A.R.; Tahir, N.A.

    2014-01-01

    The compression of a cylindrical target by a rotating heavy ions beam is contemplated in certain inertial fusion schemes or in heavy density matter experiments. Because the beam has its proper temporal profile, the energy deposition is asymmetric and leaves an imprint which can have important consequences for the rest of the process. In this paper, the Fourier components of the deposited ion density are computed exactly in terms of the beam temporal profile and its rotation frequency Ω. We show that for any beam profile of duration T, there exist an infinite number of values of ΩT canceling exactly any given harmonic. For the particular case of a parabolic profile, we find possible to cancel exactly the first harmonic and nearly cancel every other odd harmonics. In such case, the imprint amplitude is divided by 4 without any increase of Ω

  11. Direct deposition of gold on silicon with focused ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Irradiation with ions at very low energies (below 500 eV) no longer induces a removal of substrate material, but the ions are directly deposited on the surface. In this way, gold has been deposited on silicon with focused ion beam exposure and the properties of the film have been investigated with atomic force microscopy and Auger electron spectroscopy. (author) 3 figs., 1 ref.

  12. Energy deposition profile on ISOLDE Beam Dumps by FLUKA simulations

    CERN Document Server

    Vlachoudis, V

    2014-01-01

    In this report an estimation of the energy deposited on the current ISOLDE beam dumps obtained by means of FLUKA simulation code is presented. This is done for both ones GPS and HRS. Some estimations of temperature raise are given based on the assumption of adiabatic increase from energy deposited by the impinging protons. However, the results obtained here in relation to temperature are only a rough estimate. They are meant to be further studied through thermomechanical simulations using the energyprofiles hereby obtained.

  13. Ion assisted deposition of thermally evaporated Ag and Al films

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Lingg, L.J.; Lehan, J.P.; Macleod, H.A.; Makous, J.L.; Kim, S.Y.; University of Arizona, Physics Department, Tucson, Arizona 85721; Aju University, Physics Department, Suwon, Korea)

    1989-01-01

    Optical, electrical, and microstructural effects of Ar ion bombardment and Ar incorporation on thermally evaporated Ag and Al thin films are investigated. The results show that as the momentum supplied to the growing films by the bombarding ions per arriving metal atom increases, the refractive index at 632.8 nm increases and the extinction coefficient decreases, lattice spacing expands, grain size decreases, electrical resistivity increases, and trapped Ar increases slightly. In Ag films, stress reverses from tensile to compressive and in Al films compressive stress increases. In the Al films the change in optical constants can be explained by the variation in void volume. The reversal of stress from tensile to compressive in Ag films requires a threshold level of momentum. The increase in electrical resistivity is related to the decrease in grain size and increase in trapped Ar in both types of film. Many of these properties correlate well with the momentum transferred, suggesting that the momentum is an important physical parameter in describing the influence of ion beam on growing thin films and determining the characteristics of thin metal films prepared by ion assisted deposition

  14. Reactive ion assisted deposition of aluminum oxynitride thin films

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Lingg, L.J.; Lehan, J.P.; Macleod, H.A.; Suits, F.

    1989-01-01

    Optical properties, stoichiometry, chemical bonding states, and crystal structure of aluminum oxynitride (AlO/sub x/N/sub y/) thin films prepared by reactive ion assisted deposition were investigated. The results show that by controlling the amount of reactive gases the refractive index of aluminum oxynitride films at 550 nm is able to be varied from 1.65 to 1.83 with a very small extinction coefficient. Variations of optical constants and chemical bonding states of aluminum oxynitride films are related to the stoichiometry. From an x-ray photoelectron spectroscopy analysis it is observed that our aluminum oxynitride film is not simply a mixture of aluminum oxide and aluminum nitride but a continuously variable compound. The aluminum oxynitride films are amorphous from an x-ray diffraction analysis. A rugate filter using a step index profile of aluminum oxynitride films was fabricated by nitrogen ion beam bombardment of a growing Al film with backfill oxygen pressure as the sole variation. This filter shows a high resistivity to atmospheric moisture adsorption, suggesting that the packing density of aluminum oxynitride films is close to unity and the energetic ion bombardment densifies the film as well as forming the compound

  15. Electrostatic force assisted deposition of graphene

    Science.gov (United States)

    Liang, Xiaogan [Berkeley, CA

    2011-11-15

    An embodiment of a method of depositing graphene includes bringing a stamp into contact with a substrate over a contact area. The stamp has at least a few layers of the graphene covering the contact area. An electric field is developed over the contact area. The stamp is removed from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.

  16. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-05-15

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances.

  17. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    International Nuclear Information System (INIS)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang

    2013-01-01

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances

  18. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  19. Study on the Deposition Rate Depending on Substrate Position by Using Ion Beam Sputtering Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    Ion beams have been used for over thirty years to modify materials in manufacturing of integrated circuits, and improving the corrosion properties of surfaces. Recently, the requirements for ion beam processes are becoming especially challenging in the following areas : ultra shallow junction formation for LSI fabrication, low damage high rate ion beam sputtering and smoothing, high quality functional surface treatment for electrical and optical properties. Ion beam sputtering is an attractive technology for the deposition of thin film coatings onto a broad variety of polymer, Si-wafer, lightweight substrates. Demand for the decoration metal is increasing. In addition, lightweight of parts is important, because of energy issues in the industries. Although a lot of researches have been done with conventional PVD methods for the deposition of metal or ceramic films on the surface of the polymer, there are still adhesion problems.

  20. Electron beam deposition system causing little damage to organic layers

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Minoru [Research Center for Solar Energy Chemistry, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Business Incubation Department, Hitachi Zosen Corporation, 2-11 Funamachi 2-Chome, Taisho-ku, Osaka 551-0022 (Japan); Matsumura, Michio, E-mail: matsu@chem.es.osaka-u.ac.jp [Research Center for Solar Energy Chemistry, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Maeda, Yasuhiro [Business Incubation Department, Hitachi Zosen Corporation, 2-11 Funamachi 2-Chome, Taisho-ku, Osaka 551-0022 (Japan)

    2011-07-29

    Conditions for deposition of an aluminum (Al) layer on an organic light-emitting layer with an electron beam (EB) deposition system were optimized with respect to deposition rate and damage to organic layers. The damage to the organic layers was found to be mostly caused by X-rays emitted from a target bombarded with accelerated electrons. In order to decrease the X-ray intensity while maintaining a high deposition rate, we used an EB source which emits high-density EB at low acceleration voltage. In addition, we inserted a heat reflector and a sintered-carbon liner between the Al target and copper crucible to improve heat insulation. As a result, the voltage needed for the deposition of Al electrodes at a rate of about 8 nm/s was lowered from normal voltages of 2.0 kV or higher to as low as 1.5 kV. To reduce the number of electrons hitting the substrate, we set pole pieces near the target and an electron trap in the chamber. The devices on which Al electrodes were deposited with the EB system showed almost the same properties as those of devices on which the Al electrodes were deposited by a resistive-heating method.

  1. Application of laser assisted cold spraying process for metal deposition

    CSIR Research Space (South Africa)

    Tlotleng, Monnamme

    2014-02-01

    Full Text Available Laser assisted cold spraying (LACS) process is a hybrid technique that uses laser and cold spray to deposit solid powders on metal substrates. For bonding to occur, the particle velocities must be supersonic which are achieved by entraining...

  2. Formation of aluminum films on silicon by ion beam deposition: a comparison with ionized cluster beam deposition

    International Nuclear Information System (INIS)

    Zuhr, R.A.; Haynes, T.E.; Galloway, M.D.; Tanaka, S.; Yamada, A.; Yamada, I.

    1991-01-01

    The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically analyzed ion beam to low energies (10-200 eV) for direct deposition onto the substrate under UHV conditions. The aluminum-on-silicon system is one which has been studied extensively by ionized cluster beam (ICB) deposition. This technique has produced intriguing results for aluminum, with oriented crystalline films being formed at room temperature in spite of the 25% mismatch in lattice constant between aluminum and silicon. In this work, we have studied the formation of such films by IBD, with emphasis on the effects of ion energy, substrate temperature, and surface cleanliness. Oriented films have been grown on Si(111) at temperatures from 40 to 300degC and with ion energies of 30-120 eV per ion. Completed films were analyzed by ion scattering, X-ray diffraction, scanning-electron microscopy, and optical microscopy. Results achieved for thin films grown by IBD are comparable to those for similar films grown by ICB deposition. (orig.)

  3. Electron-beam deposition of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Marvel, R.E.; Appavoo, K. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Choi, B.K. [Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville, TN (United States); Nag, J. [Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States); Haglund, R.F. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Vanderbilt University, Institute for Nanoscale Science and Engineering, Nashville, TN (United States); Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States)

    2013-06-15

    Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass. (orig.)

  4. Focused ion beam machining and deposition for nanofabrication

    Energy Technology Data Exchange (ETDEWEB)

    Davies, S T; Khamsehpour, B [Warwick Univ., Coventry (United Kingdom). Dept. of Engineering

    1996-05-01

    Focused ion beam micromatching (FIBM) and focused ion beam deposition (FIBD) enable spatially selective, maskless, patterning and processing of materials at extremely high levels of resolution. State-of-the-art focused ion beam (FIB) columns based on high brightness liquid metal ion source (LMIS) technology are capable of forming probes with dimensions of order 10 nm with a lower limit on spot size set by the inherent energy spread of the LMIS and the chromatic aberration of ion optical systems. The combination of high lateral and depth resolution make FIBM and FIBD powerful tools for nanotechnology applications. In this paper we present some methods of controlling FIBM and FIBD processes for nanofabrication purposes and discuss their limitations. (author).

  5. An optimized nanoparticle separator enabled by electron beam induced deposition

    International Nuclear Information System (INIS)

    Fowlkes, J D; Rack, P D; Doktycz, M J

    2010-01-01

    Size-based separations technologies will inevitably benefit from advances in nanotechnology. Direct-write nanofabrication provides a useful mechanism for depositing/etching nanoscale elements in environments otherwise inaccessible to conventional nanofabrication techniques. Here, electron beam induced deposition was used to deposit an array of nanoscale features in a 3D environment with minimal material proximity effects outside the beam-interaction region. Specifically, the membrane component of a nanoparticle separator was fabricated by depositing a linear array of sharply tipped nanopillars, with a singular pitch, designed for sub-50 nm nanoparticle permeability. The nanopillar membrane was used in a dual capacity to control the flow of nanoparticles in the transaxial direction of the array while facilitating the sealing of the cellular-sized compartment in the paraxial direction. An optimized growth recipe resulted which (1) maximized the growth efficiency of the membrane (which minimizes proximity effects) and (2) preserved the fidelity of the spacing between nanopillars (which maximizes the size-based gating quality of the membrane) while (3) maintaining sharp nanopillar apexes for impaling an optically transparent polymeric lid critical for device sealing.

  6. An optimized nanoparticle separator enabled by electron beam induced deposition

    Science.gov (United States)

    Fowlkes, J. D.; Doktycz, M. J.; Rack, P. D.

    2010-04-01

    Size-based separations technologies will inevitably benefit from advances in nanotechnology. Direct-write nanofabrication provides a useful mechanism for depositing/etching nanoscale elements in environments otherwise inaccessible to conventional nanofabrication techniques. Here, electron beam induced deposition was used to deposit an array of nanoscale features in a 3D environment with minimal material proximity effects outside the beam-interaction region. Specifically, the membrane component of a nanoparticle separator was fabricated by depositing a linear array of sharply tipped nanopillars, with a singular pitch, designed for sub-50 nm nanoparticle permeability. The nanopillar membrane was used in a dual capacity to control the flow of nanoparticles in the transaxial direction of the array while facilitating the sealing of the cellular-sized compartment in the paraxial direction. An optimized growth recipe resulted which (1) maximized the growth efficiency of the membrane (which minimizes proximity effects) and (2) preserved the fidelity of the spacing between nanopillars (which maximizes the size-based gating quality of the membrane) while (3) maintaining sharp nanopillar apexes for impaling an optically transparent polymeric lid critical for device sealing.

  7. Capillary assisted deposition of carbon nanotube film for strain sensing

    Science.gov (United States)

    Li, Zida; Xue, Xufeng; Lin, Feng; Wang, Yize; Ward, Kevin; Fu, Jianping

    2017-10-01

    Advances in stretchable electronics offer the possibility of developing skin-like motion sensors. Carbon nanotubes (CNTs), owing to their superior electrical properties, have great potential for applications in such sensors. In this paper, we report a method for deposition and patterning of CNTs on soft, elastic polydimethylsiloxane (PDMS) substrates using capillary action. Micropillar arrays were generated on PDMS surfaces before treatment with plasma to render them hydrophilic. Capillary force enabled by the micropillar array spreads CNT solution evenly on PDMS surfaces. Solvent evaporation leaves a uniform deposition and patterning of CNTs on PDMS surfaces. We studied the effect of the CNT concentration and micropillar gap size on CNT coating uniformity, film conductivity, and piezoresistivity. Leveraging the piezoresistivity of deposited CNT films, we further designed and characterized a device for the contraction force measurement. Our capillary assisted deposition method of CNT films showed great application potential in fabrication of flexible CNT thin films for strain sensing.

  8. Controllable deposition of gadolinium doped ceria electrolyte films by magnetic-field-assisted electrostatic spray deposition

    International Nuclear Information System (INIS)

    Ksapabutr, Bussarin; Chalermkiti, Tanapol; Wongkasemjit, Sujitra; Panapoy, Manop

    2013-01-01

    This paper describes a simple and low-temperature approach to fabrication of dense and crack-free gadolinium doped ceria (GDC) thin films with controllable deposition by a magnetic-field-assisted electrostatic spray deposition technique. The influences of external permanent magnets on the deposition of GDC films were investigated. The coating area deposited using two magnets with the same pole arrangement decreased in comparison with the case of no magnets, whereas the largest deposition area was obtained in the system of the opposite poles. Analysis of as-deposited films at 450 °C indicated the formation of uniform, smooth and dense thin films with a single-phase fluorite structure. The films produced in the system using same poles were thicker, smaller in crystallite size and smoother than those fabricated under other conditions. Additionally, the GDC film deposited using the same pole arrangement showed the maximum in electrical conductivity of about 2.5 × 10 −2 S/cm at a low operating temperature of 500 °C. - Highlights: • Magnetic-field-assisted electrostatic spray allows a controllable coating. • Dense, crack-free thin films were obtained at low process temperature of 450 °C. • Control of deposition, thickness and uniformity is easy to achieve simultaneously. • Films from the same pole were thicker, smaller in crystal size and smoother. • The maximum conductivity of doped ceria film was 2.5 × 10 −2 S/cm at 500 °C

  9. A critical literature review of focused electron beam induced deposition

    International Nuclear Information System (INIS)

    Dorp, W. F. van; Hagen, C. W.

    2008-01-01

    An extensive review is given of the results from literature on electron beam induced deposition. Electron beam induced deposition is a complex process, where many and often mutually dependent factors are involved. The process has been studied by many over many years in many different experimental setups, so it is not surprising that there is a great variety of experimental results. To come to a better understanding of the process, it is important to see to which extent the experimental results are consistent with each other and with the existing model. All results from literature were categorized by sorting the data according to the specific parameter that was varied (current density, acceleration voltage, scan patterns, etc.). Each of these parameters can have an effect on the final deposit properties, such as the physical dimensions, the composition, the morphology, or the conductivity. For each parameter-property combination, the available data are discussed and (as far as possible) interpreted. By combining models for electron scattering in a solid, two different growth regimes, and electron beam induced heating, the majority of the experimental results were explained qualitatively. This indicates that the physical processes are well understood, although quantitatively speaking the models can still be improved. The review makes clear that several major issues remain. One issue encountered when interpreting results from literature is the lack of data. Often, important parameters (such as the local precursor pressure) are not reported, which can complicate interpretation of the results. Another issue is the fact that the cross section for electron induced dissociation is unknown. In a number of cases, a correlation between the vertical growth rate and the secondary electron yield was found, which suggests that the secondary electrons dominate the dissociation rather than the primary electrons. Conclusive evidence for this hypothesis has not been found. Finally

  10. Ion assisted deposition of SiO2 film from silicon

    Science.gov (United States)

    Pham, Tuan. H.; Dang, Cu. X.

    2005-09-01

    Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

  11. Ion assisted deposition of refractory oxide thin film coatings for improved optical and structural properties

    International Nuclear Information System (INIS)

    Sahoo, N.K.; Thakur, S.; Bhattacharyya, D.; Das, N.C.

    1999-03-01

    Ion assisted deposition technique (IAD) has emerged as a powerful tool to control the optical and structural properties of thin film coatings. Keeping in view the complexity of the interaction of ions with the films being deposited, sophisticated ion sources have been developed that cater to the need of modern optical coatings with stringent spectral and environmental specifications. In the present work, the results of ion assisted deposition (IAD) of two commonly used refractory oxides, namely TiO 2 and ZrO 2 , using cold cathode ion source (CC-102R) are presented. Through successive feedback and calibration techniques, various ion beams as well as deposition parameters have been optimized to achieve the best optical and structural film properties in the prevalent deposition geometry of the coating system. It has been possible to eliminate the unwanted optical and structural inhomogeneities from these films using and optimized set of process parameters. Interference modulated spectrophotometric and phase modulated ellipsometric techniques have been very successfully utilized to analyze the optical and structural parameters of the films. Several precision multilayer coatings have been developed and are being used for laser and spectroscopic applications. (author)

  12. Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

    Directory of Open Access Journals (Sweden)

    C. G. Jin

    2008-01-01

    Full Text Available Silicon carbide (SiC films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM, scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

  13. Photon beam convolution using polyenergetic energy deposition kernels

    International Nuclear Information System (INIS)

    Hoban, P.W.; Murray, D.C.; Round, W.H.

    1994-01-01

    In photon beam convolution calculations where polyenergetic energy deposition kernels (EDKs) are used, the primary photon energy spectrum should be correctly accounted for in Monte Carlo generation of EDKs. This requires the probability of interaction, determined by the linear attenuation coefficient, μ, to be taken into account when primary photon interactions are forced to occur at the EDK origin. The use of primary and scattered EDKs generated with a fixed photon spectrum can give rise to an error in the dose calculation due to neglecting the effects of beam hardening with depth. The proportion of primary photon energy that is transferred to secondary electrons increases with depth of interaction, due to the increase in the ratio μ ab /μ as the beam hardens. Convolution depth-dose curves calculated using polyenergetic EDKs generated for the primary photon spectra which exist at depths of 0, 20 and 40 cm in water, show a fall-off which is too steep when compared with EGS4 Monte Carlo results. A beam hardening correction factor applied to primary and scattered 0 cm EDKs, based on the ratio of kerma to terma at each depth, gives primary, scattered and total dose in good agreement with Monte Carlo results. (Author)

  14. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  15. CoPt nanoparticles deposited by electron beam evaporation

    International Nuclear Information System (INIS)

    Castaldi, L.; Giannakopoulos, K.; Travlos, A.; Niarchos, D.; Boukari, S.; Beaurepaire, E.

    2005-01-01

    Co 50 Pt 50 nanoparticles were co-deposited on thermally oxidized Si substrates by electron beam evaporation at 750 deg C. The mean particle sizes are between ∼5 and ∼20 nm and depend on the nominal thickness of the layer. Different processing conditions resulted in different structural and morphological properties of the samples which led to superparamagnetic and ferromagnetic behaviors. The post-annealing treatment of the CoPt nanograins resulted in the crystallization of the L1 0 ordered phase and in the magnetic hardening of nanoparticles with a maximum coercivity of ∼7.4 kOe

  16. Electrical and optical performance of transparent conducting oxide films deposited by electrostatic spray assisted vapour deposition.

    Science.gov (United States)

    Hou, Xianghui; Choy, Kwang-Leong; Liu, Jun-Peng

    2011-09-01

    Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.

  17. Electron beam assisted field evaporation of insulating nanowires/tubes

    Energy Technology Data Exchange (ETDEWEB)

    Blanchard, N. P., E-mail: nicholas.blanchard@univ-lyon1.fr; Niguès, A.; Choueib, M.; Perisanu, S.; Ayari, A.; Poncharal, P.; Purcell, S. T.; Siria, A.; Vincent, P. [Institut Lumière Matière, UMR5306 Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne Cedex (France)

    2015-05-11

    We demonstrate field evaporation of insulating materials, specifically BN nanotubes and undoped Si nanowires, assisted by a convergent electron beam. Electron irradiation leads to positive charging at the nano-object's apex and to an important increase of the local electric field thus inducing field evaporation. Experiments performed both in a transmission electron microscope and in a scanning electron microscope are presented. This technique permits the selective evaporation of individual nanowires in complex materials. Electron assisted field evaporation could be an interesting alternative or complementary to laser induced field desorption used in atom probe tomography of insulating materials.

  18. Nanoscale Soldering of Positioned Carbon Nanotubes using Highly Conductive Electron Beam Induced Gold Deposition

    DEFF Research Database (Denmark)

    Madsen, Dorte Nørgaard; Mølhave, Kristian; Mateiu, Ramona Valentina

    2003-01-01

    We have developed an in-situ method for controlled positioning of carbon nanotubes followed by highly conductive contacting of the nanotubes, using electron beam assisted deposition of gold. The positioning and soldering process takes place inside an Environmental Scanning Electron Microscope (E...... in a carbon matrix. Nanoscale soldering of multi-walled carbon nanotubes (MWNT) onto microelectrodes was achieved by deposition of a conducting gold line across a contact point between nanotube and electrode. The solderings were found to be mechanically stronger than the carbon nanotubes. We have positioned...... MWNTs to bridge the gap between two electrodes, and formed soldering bonds between the tube and each of the electrodes. All nanotube bridges showed ohmic resistances in the range 10-30 kΩ. We observed no increase in resistance after exposing the MWNT bridge to air for days....

  19. Ion-Assisted Pulsed Laser Deposition of amorphous tetrahedral-coordinated carbon films

    Science.gov (United States)

    Friedmann, T. A.; Tallant, D. R.; Sullivan, J. P.; Siegal, M. P.; Simpson, R. L.

    1994-04-01

    A parametric study has been performed of amorphous tetrahedral carbon (a-tC) films produced by ion-assisted pulsed laser deposition (IAPLD). The ion voltage, current density, and feed gas composition (nitrogen in argon) have been varied. The resultant films were characterized by thickness, residual stress, Raman spectroscopy, and electrical resistivity. The Raman spectra have been fit to two gaussian peaks, the so called graphitic (G) peak and the disorder (D) peak. It has been found that the magnitude of the D peak and the residual compressive stress are inversely correlated. At low beam voltages and currents, the magnitude of the D peak is low, increasing as the ion beam voltage and current are raised. The ion beam voltage has the most dramatic effect on the magnitude of the D peak. At low voltages (200-500 V) the magnitude of the D peak is greater for ion beams with high percentages of nitrogen possibly indicative of C-N bonding in the films. At higher voltages (500-1500 V) the D peak intensity is less sensitive to the nitrogen content of the beam.

  20. Ion-beam nanopatterning: experimental results with chemically-assisted beam

    Science.gov (United States)

    Pochon, Sebastien C. R.

    2018-03-01

    The need for forming gratings (for example used in VR headsets) in materials such as SiO2 has seen a recent surge in the use of Ion beam etching techniques. However, when using an argon-only beam, the selectivity is limited as it is a physical process. Typically, gases such as CHF3, SF6, O2 and Cl2 can be added to argon in order to increase selectivity; depending on where the gas is injected, the process is known as Reactive Ion Beam Etching (RIBE) or Chemically Assisted Ion Beam Etching (CAIBE). The substrate holder can rotate in order to provide an axisymmetric etch rate profile. It can also be tilted over a range of angles to the beam direction. This enables control over the sidewall profile as well as radial uniformity optimisation. Ion beam directionality in conjunction with variable incident beam angle via platen angle setting enables profile control and feature shaping during nanopatterning. These hardware features unique to the Ion Beam etching methods can be used to create angled etch features. The CAIBE technique is also well suited to laser diode facet etch (for optoelectronic devices); these typically use III-V materials like InP. Here, we report on materials such as SiO2 etched without rotation and at a fixed platen angle allowing the formation of gratings and InP etched at a fixed angle with rotation allowing the formation of nanopillars and laser facets.

  1. Stress in ion-beam assisted silicon dioxide and tantalum pentoxide thin films

    International Nuclear Information System (INIS)

    Sirotkina, Natalia

    2003-01-01

    Ta 2 O 5 and SiO 2 thin films, deposited at room temperature by ion-beam sputtering (IBS) and dual ion-beam sputtering (DIBS), and SiO 2 films, deposited by reactive e-beam evaporation and ion-assisted deposition, were studied. The energy (150-600 eV) and ion-to-atom arrival ratio (0.27-2.0) of assisting argon and oxygen ions were varied. Influence of deposition conditions (deposition system geometry, nature and amount of gas in the chamber, substrate cleaning and ion-assistance parameters) on films properties (stress, composition, refractive index n 500nm and extinction coefficient k 500nm ) was investigated. A scanning method, based on substrate curvature measurements by laser reflection and stress calculation using the Stoney equation, was employed. RBS showed that stoichiometric Ta 2 O 5 films contain impurities of Ar, Fe and Mo. Stoichiometric SiO 2 films also contain Ta impurity. Argon content increases with ion bombardment and, at maximum incorporation, argon bubbles are registered by TEM. XPS studies are complicated by surface contaminations and preferential sputtering. Evaporated SiO 2 films show +100 MPa stress (+ is tensile, - compressive). With 300 eV Ar + bombardment, stress changes to -200 MPa, n 500nm decreases (1.56-1.49) and k 500nm increases (1.4x10 -4 - 1.8x10 -3 ). Of all studied IBS conditions, stress in SiO 2 (-560 MPa) and Ta 2 O 5 (-350 MPa) films depends only on sputtering gas species and oxygen entry point into the chamber. With argon and oxygen bombardment stress in IBS SiO 2 films decreases to -380 MPa and below the stress measurement system resolution, respectively. While Ar + bombardment of Ta 2 O 5 films leads to increase in stress to -490 MPa, the effect of oxygen assistance depends on ion energy. The observed behaviour was related to the total recoil density. In DIBS SiO 2 and Ta 2 O 5 films n 500nm varies in the region of 1.5-1.59 and 2.13-2.20 and k 500nm is below 5.5x10 -3 and 8.5x10 -3 , respectively. The refractive index

  2. Energy deposition studies for the LBNE beam absorber

    International Nuclear Information System (INIS)

    Rakhno, Igor L.; Mokhov, Nikolai V.; Tropin, Igor S.

    2015-01-01

    Results of detailed Monte Carlo energy deposition studies performed for the LBNE absorber core and the surrounding shielding with the MARS15 code are described. The model of the entire facility that includes a pion-production target, focusing horns, target chase, decay channel, hadron absorber system - all with corresponding radiation shielding - was developed using the recently implemented ROOT-based geometry option in the MARS15 code. This option provides substantial flexibility and automation when developing complex geometry models. Both normal operation and accidental conditions were studied. Various design options were considered, in particular the following: (i) filling the decay pipe with air or helium; (ii) the absorber mask material and shape; (iii) the beam spoiler material and size. Results of detailed thermal calculations with the ANSYS code helped to select the most viable absorber design options. (authors)

  3. Comparative study of tantalum deposition by chemical vapor deposition and electron beam vacuum evaporation

    International Nuclear Information System (INIS)

    Spitz, J.; Chevallier, J.

    1975-01-01

    The coating by tantalum of steel parts has been carried out by the two following methods: chemical vapor deposition by hydrogen reduction of TaCl 5 (temperature=1100 deg C, pressure=200 mmHg, H 2 /TaCl 5 =10); electron beam vacuum evaporation. In this case Ta was firstly condensed by ion plating (P(Ar)=5x10 -3 up to 2x10 -2 mmHg; U(c)=3 to -4kV and J(c)=0.2 to 1mAcm -2 ) in order to ensure a good adhesion between deposit and substrate; then by vacuum condensation (substrate temperature: 300 to 650 deg C) to ensure that the coating is impervious to HCl an H 2 SO 4 acids. The advantages and inconveniences of each method are discussed [fr

  4. Ion beam deposition system for depositing low defect density extreme ultraviolet mask blanks

    Science.gov (United States)

    Jindal, V.; Kearney, P.; Sohn, J.; Harris-Jones, J.; John, A.; Godwin, M.; Antohe, A.; Teki, R.; Ma, A.; Goodwin, F.; Weaver, A.; Teora, P.

    2012-03-01

    Extreme ultraviolet lithography (EUVL) is the leading next-generation lithography (NGL) technology to succeed optical lithography at the 22 nm node and beyond. EUVL requires a low defect density reflective mask blank, which is considered to be one of the top two critical technology gaps for commercialization of the technology. At the SEMATECH Mask Blank Development Center (MBDC), research on defect reduction in EUV mask blanks is being pursued using the Veeco Nexus deposition tool. The defect performance of this tool is one of the factors limiting the availability of defect-free EUVL mask blanks. SEMATECH identified the key components in the ion beam deposition system that is currently impeding the reduction of defect density and the yield of EUV mask blanks. SEMATECH's current research is focused on in-house tool components to reduce their contributions to mask blank defects. SEMATECH is also working closely with the supplier to incorporate this learning into a next-generation deposition tool. This paper will describe requirements for the next-generation tool that are essential to realize low defect density EUV mask blanks. The goal of our work is to enable model-based predictions of defect performance and defect improvement for targeted process improvement and component learning to feed into the new deposition tool design. This paper will also highlight the defect reduction resulting from process improvements and the restrictions inherent in the current tool geometry and components that are an impediment to meeting HVM quality EUV mask blanks will be outlined.

  5. Plasma and Ion Assistance in Physical Vapor Deposition: AHistorical Perspective

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2007-02-28

    Deposition of films using plasma or plasma-assist can betraced back surprisingly far, namely to the 18th century for arcs and tothe 19th century for sputtering. However, only since the 1960s thecoatings community considered other processes than evaporation for largescale commercial use. Ion Plating was perhaps the first importantprocess, introducing vapor ionization and substrate bias to generate abeam of ions arriving on the surface of the growing film. Ratherindependently, cathodic arc deposition was established as an energeticcondensation process, first in the former Soviet Union in the 1970s, andin the 1980s in the Western Hemisphere. About a dozen various ion-basedcoating technologies evolved in the last decades, all characterized byspecific plasma or ion generation processes. Gridded and gridless ionsources were taken from space propulsion and applied to thin filmdeposition. Modeling and simulation have helped to make plasma and ionseffects to be reasonably well understood. Yet--due to the complex, oftennon-linear and non-equilibrium nature of plasma and surfaceinteractions--there is still a place for the experience plasma"sourcerer."

  6. Thermal barrier coatings of rare earth materials deposited by electron beam-physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu Zhenhua [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); He Limin, E-mail: he_limin@yahoo.co [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Chen Xiaolong; Zhao Yu [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Cao Xueqiang, E-mail: xcao@ciac.jl.c [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

    2010-10-15

    Thermal barrier coatings (TBCs) have very important applications in gas turbines for higher thermal efficiency and protection of components at high temperature. TBCs of rare earth materials such as lanthanum zirconate (La{sub 2}Zr{sub 2}O{sub 7}, LZ), lanthanum cerate (La{sub 2}Ce{sub 2}O{sub 7}, LC), lanthanum cerium zirconate (La{sub 2}(Zr{sub 0.7}Ce{sub 0.3}){sub 2}O{sub 7}, LZ7C3) were prepared by electron beam-physical vapor deposition (EB-PVD). The composition, crystal structure, cross-sectional morphology and cyclic oxidation behavior of these coatings were studied. These coatings have partially deviated from their original compositions due to the different evaporation rates of oxides, and the deviation could be reduced by properly controlling the deposition condition. A double ceramic layer-thermal barrier coatings (DCL-TBCs) of LZ7C3 and LC could also be deposited with a single LZ7C3 ingot by properly controlling the deposition energy. LaAlO{sub 3} is formed due to the chemical reaction between LC and Al{sub 2}O{sub 3} in the thermally grown oxide (TGO) layer. The failure of DCL-TBCs is a result of the sintering-induced of LZ7C3 coating and the chemical incompatibility of LC and TGO. Since no single material that has been studied so far satisfies all the requirements for high temperature applications, DCL-TBCs are an important development direction of TBCs.

  7. Summary and presentation of the international workshop on beam induced energy deposition (issues, concerns, solutions)

    International Nuclear Information System (INIS)

    Soundranayagam, R.

    1991-11-01

    This report discusses: energy deposition and radiation shielding in antriproton source at FNAL; radiation issues/problems at RHIC; radiation damage to polymers; radiation effects on optical fibre in the SSC tunnel; capabilities of the Brookhaven Radiation Effects Facility; the SSC interaction region; the FLUKA code system, modifications, recent extension and experimental verification; energy particle transport calculations and comparisons with experimental data; Los Alamos High Energy Transport code system; MCNP features and applications; intercomparison of Monte Carlo codes designed for simulation of high energy hadronic cascades; event generator, DTUJET-90 and DTUNUC; Preliminary hydrodynamic calculations of beam energy deposition; MESA code calculations of material response to explosive energy deposition; Smooth particle hydrodynamic; hydrodynamic effects and mass depletion phenomena in targets; beam dump: Beam sweeping and spoilers; Design considerations to mitigate effects of accidental beam dump; SSC beam abort and absorbed; beam abort system of SSC options; unconventional scheme for beam spoilers; low β quadrupoles: Energy deposition and radioactivation; beam induces energy deposition in the SSC components; extension of SSC-SR-1033 approach to radioactivation in LHC and SSC detectors; energy deposition in the SSC low-β IR-quads; beam losses and collimation in the LHC; and radiation shielding around scrapers

  8. Efficient electron beam deposition for repetitively pulsed krypton fluoride lasers

    International Nuclear Information System (INIS)

    Hegeler, F.; Myers, M.C.; Friedman, M.; Sethian, J.D.; Swanekamp, S.B.; Rose, D.V.; Welch, D.R.

    2002-01-01

    We have demonstrated that we can significantly increase the electron beam transmission efficiency through a pressure foil structure (hibachi) by segmenting the beam into strips to miss the hibachi support ribs. In order to increase the electron beam transmission, the cathode strips are adjusted to compensate for beam rotation and pinching. The beam propagation through the hibachi has been both measured and simulated with 1-D and 3-D codes

  9. Laser-assisted chemical vapor deposition setup for fast synthesis of graphene patterns

    Science.gov (United States)

    Zhang, Chentao; Zhang, Jianhuan; Lin, Kun; Huang, Yuanqing

    2017-05-01

    An automatic setup based on the laser-assisted chemical vapor deposition method has been developed for the rapid synthesis of graphene patterns. The key components of this setup include a laser beam control and focusing unit, a laser spot monitoring unit, and a vacuum and flow control unit. A laser beam with precision control of laser power is focused on the surface of a nickel foil substrate by the laser beam control and focusing unit for localized heating. A rapid heating and cooling process at the localized region is induced by the relative movement between the focalized laser spot and the nickel foil substrate, which causes the decomposing of gaseous hydrocarbon and the out-diffusing of excess carbon atoms to form graphene patterns on the laser scanning path. All the fabrication parameters that affect the quality and number of graphene layers, such as laser power, laser spot size, laser scanning speed, pressure of vacuum chamber, and flow rates of gases, can be precisely controlled and monitored during the preparation of graphene patterns. A simulation of temperature distribution was carried out via the finite element method, providing a scientific guidance for the regulation of temperature distribution during experiments. A multi-layer graphene ribbon with few defects was synthesized to verify its performance of the rapid growth of high-quality graphene patterns. Furthermore, this setup has potential applications in other laser-based graphene synthesis and processing.

  10. A simulation study of interface mixing during ion-assisted deposition

    International Nuclear Information System (INIS)

    Wenzhi Li; Fuzhai Cui; Yi Liao; Hengde Li

    1990-01-01

    Ion-beam assisted deposition (IAD) can produce strong film to substrate adhesion. The adhesion depends heavily on atom mixing near the interface. In order to study the dependence of the width of the mixed interface on the experimental parameters, a Monte Carlo study has been made using the dynamic simulation code TCIS-6. The simulation mode and calculational procedure are described. Simulation calculations indicate that the mixing increases with the bombarding energies and a saturation width appears at high energies. There is a strong relationship between the amount of mixing and the ion-to-atom arrival ratio. Some comparisons of the calculations with experimental data in the literature are also presented. (author)

  11. Plasma and Ion Assistance in Physical Vapor Deposition: A Historical Perspective

    International Nuclear Information System (INIS)

    Anders, Andre

    2007-01-01

    Deposition of films using plasma or plasma-assist can be traced back surprisingly far, namely to the 18th century for arcs and to the 19th century for sputtering. However, only since the 1960s the coatings community considered other processes than evaporation for large scale commercial use. Ion Plating was perhaps the first important process, introducing vapor ionization and substrate bias to generate a beam of ions arriving on the surface of the growing film. Rather independently, cathodic arc deposition was established as an energetic condensation process, first in the former Soviet Union in the 1970s, and in the 1980s in the Western Hemisphere. About a dozen various ion-based coating technologies evolved in the last decades, all characterized by specific plasma or ion generation processes. Gridded and gridless ion sources were taken from space propulsion and applied to thin film deposition. Modeling and simulation have helped to make plasma and ions effects to be reasonably well understood. Yet--due to the complex, often non-linear and non-equilibrium nature of plasma and surface interactions--there is still a place for the experience plasma 'sourcerer'

  12. Electron irradiation effects in amorphous antimony thin films obtained by cluster-beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fuchs, G.; Treilleux, M.; Santos Aires, F.; Cabaud, B.; Melinon, P.; Hoareau, A. (Lyon-1 Univ., 69 - Villeurbanne (France))

    1991-03-01

    In order to understand the differences existing between films obtained with a classical molecular beam deposition (MBD) and the new low-energy cluster beam deposition (LECBD), transmission electron microscopy has been used to characterize the first stages of antimony LECBD. Antimony deposits are discontinuous and amorphous up to 2 nm in thickness. They are formed with isolated amorphous antimony particles surrounded by an amorphous antimony oxide shell. Moreover, under electron beam exposure in the microscope, an amorphous-crystal transformation has been observed in the oxide shell. Electron irradiation induces the formation of a crystallized antimony oxide (Sb{sub 2}O{sub 3}) around the amorphous antimony core. (author).

  13. Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

    International Nuclear Information System (INIS)

    Gallais, Laurent; Capoulade, Jeremie; Natoli, Jean-Yves; Commandre, Mireille; Cathelinaud, Michel; Koc, Cian; Lequime, Michel

    2008-01-01

    A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or HfO2 starting material), reactive low voltage ion plating, and dual ion beam sputtering.The laser damage thresholds of these coatings are determined at 1064 and 355 nm using a nanosecond pulsed YAG laser and a one-on-one test procedure. The results are associated with a complete characterization of the samples: refractive index n measured by spectrophotometry, extinction coefficient k measured by photothermal deflection, and roughness measured by atomic force microscopy

  14. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam

    KAUST Repository

    Alaie, Seyedhamidreza; Goettler, Drew F.; Jiang, Yingbing; Abbas, Khawar; Baboly, Mohammadhosein Ghasemi; Anjum, Dalaver H.; Chaieb, Saharoui; Leseman, Zayd Chad

    2015-01-01

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties

  15. Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeO{sub x} films grown by molecular beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro [Laboratorio MDM, CNR-IMM, via C. Olivetti 2, Agrate Brianza (MB) I-20864 (Italy); Baldovino, Silvia; Fanciulli, Marco [Laboratorio MDM, CNR-IMM, via C. Olivetti 2, Agrate Brianza (MB) I-20864 (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Tsoutsou, Dimitra; Golias, Evangelos; Dimoulas, Athanasios [MBE Laboratory, Institute of Materials Science, NCSR DEMOKRITOS, Athens 153 10 (Greece)

    2011-10-15

    Changes in the electron trapping at the interface between Ge substrates and LaGeO{sub x} films grown by atomic O assisted molecular beam deposition are inferred upon post deposition annealing treatment on the as-deposited films from electrically detected magnetic resonance (EDMR) spectroscopy and from the electrical response of Pt/LaGeO{sub x}/Ge metal oxide semiconductor (MOS) capacitors. The improved electrical performance of the MOS capacitors upon annealing is consistent with the EDMR detected reduction of oxide defects which are associated with GeO species in the LaGeO{sub x} layer as evidenced by x-ray photoelectron spectroscopy.

  16. High-rate deposition of SI absorber layers by electron beam evaporation and first electron beam crystallization tests

    OpenAIRE

    Saager, Stefan; Ben Yaala, Marwa; Heinß, Jens-Peter; Temmler, Dietmar; Pfefferling, Bert; Metzner, Christoph

    2014-01-01

    In earlier electron beam physical vapor deposition tests (EB-PVD), using a conventional copper crucible (A), high Si deposition rates at relatively high EB power together with a contamination level of 1016 cm-3 are demonstrated. To improve the rate vs. EB power relation as well as the Si layer purity, two alternative high rate EBPVD methods are investigated and reported here - a contact-less crucible setup (B) and a crucible-free setup (C).In these experiments comparable deposition rates of ~...

  17. High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chiarella, F., E-mail: fabio.chiarella@spin.cnr.it; Barra, M.; Ciccullo, F.; Cassinese, A. [CNR-SPIN and Physics Department, University of Naples, Piazzale Tecchio 80, I-80125 Naples (Italy); Toccoli, T.; Aversa, L.; Tatti, R.; Verucchi, R. [IMEM-CNR-FBK Division of Trento, Via alla Cascata 56/C, I-38123 Povo (Italy); Iannotta, S. [IMEM-CNR, Parco Area delle Scienze 37/A, I-43124 Parma (Italy)

    2014-04-07

    In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

  18. Simulation calculation for the energy deposition profile and the transmission fraction of intense pulsed electron beam at various incident angles

    International Nuclear Information System (INIS)

    Yang Hailiang; Qiu Aici; Zhang Jiasheng; Huang Jianjun; Sun Jianfeng

    2002-01-01

    The incident angles have a heavy effect on the intense pulsed electron beam energy deposition profile, energy deposition fraction and beam current transmission fraction in material. The author presents electron beam energy deposition profile and energy deposition fraction versus electron energy (0.5-2.0 MeV), at various incident angles for three aluminum targets of various thickness via theoretical calculation. The intense pulsed electron beam current transmission fractions versus electron energy (0.4-1.4 MeV) at various incident angles for three thickness of carbon targets were also theoretically calculated. The calculation results indicate that the deposition energy in unit mass of material surface layer increase with the rise of electron beam incident angle, and electron beam with low incident angle (closer to normal incident angle) penetrates deeper into the target material. The electron beams deposit more energy in unit mass of material surface layer at 60 degree-70 degree incident angle

  19. Ion source for ion beam deposition employing a novel electrode assembly

    Science.gov (United States)

    Hayes, A. V.; Kanarov, V.; Yevtukhov, R.; Hegde, H.; Druz, B.; Yakovlevitch, D.; Cheesman, W.; Mirkov, V.

    2000-02-01

    A rf inductively coupled ion source employing a novel electrode assembly for focusing a broad ion beam on a relatively small target area was developed. The primary application of this ion source is the deposition of thin films used in the fabrication of magnetic sensors and optical devices. The ion optics consists of a three-electrode set of multiaperture concave dished grids with a beam extraction diameter of 150 mm. Also described is a variation in the design providing a beam extraction diameter of 120 mm. Grid hole diameters and grid spacing were optimized for low beamlet divergence and low grid impingement currents. The radius of curvature of the grids was optimized to obtain an optimally focused ion beam at the target location. A novel grid fabrication and mounting design was employed which overcomes typical limitations of such grid assemblies, particularly in terms of maintaining optimum beam focusing conditions after multiple cycles of operation. Ion beam generation with argon and xenon gases in energy ranges from 0.3 to 2.0 keV was characterized. For operation with argon gas, beam currents greater than 0.5 A were obtained with a beam energy of 800 eV. At optimal beam formation conditions, beam profiles at distances about equal to the radius of curvature were found to be close to Gaussian, with 99.9% of the beam current located within a 150 mm target diameter. Repeatability of the beam profile over long periods of operation is also reported.

  20. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    Directory of Open Access Journals (Sweden)

    Brett B. Lewis

    2015-04-01

    Full Text Available Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IVMe3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.

  1. Real-time beam tracing for control of the deposition location of electron cyclotron waves

    Energy Technology Data Exchange (ETDEWEB)

    Reich, M., E-mail: matthias.reich@ipp.mpg.de; Bilato, R.; Mszanowski, U.; Poli, E.; Rapson, C.; Stober, J.; Volpe, F.; Zille, R.

    2015-11-15

    Highlights: • We successfully integrated a real-time EC beam tracing code at ASDEX Upgrade. • The calculation of EC beam deposition location is fast enough for control purposes. • The accuracy of the deposition location calculation exceeds equivalent measurements. • The implementation method is by design portable to larger fusion devices. - Abstract: Plasma control techniques that use electron cyclotron (EC) resonance heating and current drive such as control of neoclassical tearing modes require accurate control of the deposition location of EC beams. ASDEX Upgrade has successfully implemented a real-time version of the beam-tracing code TORBEAM into its real-time diagnostic system to act as a globally available module that calculates current deposition location and its sensitivity from other real-time diagnostic measurements for all its moveable EC wave launchers. Based on a highly (100×) accelerated version of TORBEAM, the software implementation as a diagnostic process uses parallelization and achieves cycle times of 15–20 ms for determining the radial deposition location of 12 beams in the plasma. This cycle time includes data input–output overhead arising from the use of available real-time signals. The system is by design portable to other machines such as ITER.

  2. Energy deposition, heat flow, and rapid solidification during laser and electron beam irradiation of materials

    Energy Technology Data Exchange (ETDEWEB)

    White, C.W.; Aziz, M.J.

    1985-10-01

    The fundamentals of energy deposition, heat flow, and rapid solidification during energy deposition from lasers and electron beams is reviewed. Emphasis is placed on the deposition of energy from pulsed sources (10 to 100 ns pulse duration time) in order to achieve high heating and cooling rates (10/sup 8/ to 10/sup 10/ /sup 0/C/s) in the near surface region. The response of both metals and semiconductors to pulsed energy deposition is considered. Guidelines are presented for the choice of energy source, wavelength, and pulse duration time.

  3. Ion-assisted sputter deposition of molybdenum--silicon multilayers

    International Nuclear Information System (INIS)

    Vernon, S.P.; Stearns, D.G.; Rosen, R.S.

    1993-01-01

    X-ray multilayer (ML) structures that are fabricated by the use of magnetron-sputter deposition exhibit a degradation in structural quality as the deposition pressure is increased. The observed change in morphology is attributed to a reduced mobility of surface adsorbed atoms, which inhibits the formation of smooth, continuous layers. The application of a negative substrate bias produces ion bombardment of the growing film surface by sputtering gas ions extracted from the plasma and permits direct control of the energy density supplied to the film surface during thin-film growth. The technique supplements the energy lost to thermalization in high-pressure deposition and permits the fabrication of high-quality ML structures at elevated processing pressures. A threefold improvement in the soft-x-ray normal-incidence reflectance at 130 A results for substrate bias voltages of the order of ∼-150 V for Mo--Si ML's deposited at 10-mTorr Ar

  4. Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane : The role of dissociative ionization and dissociative electron attachment in the deposition process

    NARCIS (Netherlands)

    Ragesh Kumar, T. P.; Hari, S.; Damodaran, Krishna K.; Ingólfsson, Oddur; Hagen, C.W.

    2017-01-01

    We present first experiments on electron beam induced deposition of silacyclohexane (SCH) and dichlorosilacyclohexane (DCSCH) under a focused high-energy electron beam (FEBID). We compare the deposition dynamics observed when growing pillars of high aspect ratio from these compounds and we

  5. Erosion behaviour of physically vapour-deposited and chemically vapour-deposited SiC films coated on molybdenum during oxygenated argon beam thinning

    International Nuclear Information System (INIS)

    Shikama, T.; Kitajima, M.; Fukutomi, M.; Okada, M.

    1984-01-01

    The erosion behaviour during bombardment with a 5 keV argon beam at room temperature was studied for silicon carbide (SiC) films of thickness of about 10 μm coated on molybdenum by physical vapour deposition (PVD) and chemical vapour deposition (CVD). The PVD SiC (plasma-assisted ion plating) exhibited a greater thinning rate than the CVD SiC film. Electron probe X-ray microanalysis revealed that the chemical composition of PVD SiC was changed to a composition enriched in silicon by the bombardment, and there was a notable change in its surface morphology. The CVD SiC retained its initial chemical composition with only a small change in its surface morphology. Auger electron spectroscopy indicated that silicon oxide was formed on the surface of PVD SiC by the bombardment. The greater thinning rate and easier change in chemical composition in PVD SiC could be attributed to its readier chemical reaction with oxygen due to its more non-uniform structure and weaker chemical bonding. Oxygen was present as one of the impurities in the argon beam. (Auth.)

  6. Neutral-beam deposition in large, finite-beta noncircular tokamak plasmas

    International Nuclear Information System (INIS)

    Wieland, R.M.; Houlberg, W.A.

    1982-02-01

    A parametric pencil beam model is introduced for describing the attenuation of an energetic neutral beam moving through a tokamak plasma. The nonnegligible effects of a finite beam cross section and noncircular shifted plasma cross sections are accounted for in a simple way by using a smoothing algorithm dependent linearly on beam radius and by including information on the plasma flux surface geometry explicitly. The model is benchmarked against more complete and more time-consuming two-dimensional Monte Carlo calculations for the case of a large D-shaped tokamak plasma with minor radius a = 120 cm and elongation b/a = 1.6. Deposition profiles are compared for deuterium beam energies of 120 to 150 keV, central plasma densities of 8 x 10 13 - 2 x 10 14 cm -3 , and beam orientation ranging from perpendicular to tangential to the inside wall

  7. Studies of the Influence of Beam Profile and Cooling Conditions on the Laser Deposition of a Directionally-Solidified Superalloy

    Directory of Open Access Journals (Sweden)

    Shuo Yang

    2018-02-01

    Full Text Available In the laser deposition of single crystal and directionally-solidified superalloys, it is desired to form laser deposits with high volume fractions of columnar grains by suppressing the columnar-to-equiaxed transition efficiently. In this paper, the influence of beam profile (circular and square shapes and cooling conditions (natural cooling and forced cooling on the geometric morphology and microstructure of deposits were experimentally studied in the laser deposition of a directionally-solidified superalloy, IC10, and the mechanisms of influence were revealed through a numerical simulation of the thermal processes during laser deposition. The results show that wider and thinner deposits were obtained with the square laser beam than those with the circular laser beam, regardless of whether natural or forced cooling conditions was used. The heights and contact angles of deposits were notably increased due to the reduced substrate temperatures by the application of forced cooling for both laser beam profiles. Under natural cooling conditions, columnar grains formed epitaxially at both the center and the edges of the deposits with the square laser beam, but only at the center of the deposits with the circular laser beam; under forced cooling conditions, columnar grains formed at both the center and the edges of deposits regardless of the laser beam profile. The high ratios of thermal gradient and solidification velocity in the height direction of the deposits were favorable to forming deposits with higher volume fractions of columnar grains.

  8. Analysis of sub-bandgap losses in TiO2 coating deposited via single and dual ion beam deposition

    Czech Academy of Sciences Publication Activity Database

    Žídek, Karel; Hlubuček, Jiří; Horodyská, Petra; Budasz, Jiří; Václavík, Jan

    2017-01-01

    Roč. 626, March (2017), s. 60-65 ISSN 0040-6090 R&D Projects: GA MŠk(CZ) LO1206 Institutional support: RVO:61389021 Keywords : Ion beam deposition * Titanium dioxide * Optical coating * Sub-bandgap losses * Urbach tail Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.879, year: 2016 http://www.sciencedirect.com/science/article/pii/S0040609017301256

  9. Laser-assisted deposition of thin C60 films

    DEFF Research Database (Denmark)

    Schou, Jørgen; Canulescu, Stela; Fæster, Søren

    Metal and metal oxide films with controlled thickness from a fraction of a monolayer up more than 1000 nm and known stoichiometry can be produced by pulsed laser deposition (PLD) relatively easily, and (PLD) is now a standard technique in all major research laboratories within materials science...... of the matrix material, anisole, with a concentration of 0.67 wt% C60. At laser fluences below 1.5 J/cm2, a dominant fraction of the film molecules are C60 transferred to the substrate without any fragmentation. High-resolution SEM images of MAPLE deposited films reveal large circular features on the surface...

  10. Electrochemical evaluation of under-deposit corrosion and its inhibition using the wire beam electrode method

    Energy Technology Data Exchange (ETDEWEB)

    Tan Yongjun, E-mail: yj.tan@curtin.edu.a [Western Australian Corrosion Research Group, Department of Chemistry, Curtin University, GPO Box U1987, Perth (Australia); Fwu, Young; Bhardwaj, Kriti [Western Australian Corrosion Research Group, Department of Chemistry, Curtin University, GPO Box U1987, Perth (Australia)

    2011-04-15

    Research highlights: A new experiment method for evaluating under-deposit corrosion and its inhibitors. Under-deposit corrosion did not occur in a CO{sub 2} saturated pure brine solution. Inhibitor imidazoline addition and O{sub 2} contamination initiated under-deposit corrosion. Inhibitor imidazoline reduced general corrosion but enhanced localised corrosion. - Abstract: A new experimental method has been applied to evaluate under-deposit corrosion and its inhibition by means of an electrochemically integrated multi-electrode array, namely the wire beam electrode (WBE). Maps showing galvanic current and corrosion potential distributions were measured from a WBE surface that was partially covered by sand. Under-deposit corrosion did not occur during the exposure of the WBE to carbon dioxide saturated brine under ambient temperature. The introduction of corrosion inhibitor imidazoline and oxygen into the brine was found to significantly affect the patterns and rates of corrosion, leading to the initiation of under-deposit corrosion over the WBE.

  11. Reduction of deposition asymmetries in directly driven ion-beam and laser targets

    International Nuclear Information System (INIS)

    Mark, J.W.K.

    1985-01-01

    The authors have developed a procedure for reducing energy-dependent asymmetry in spherical targets driven directly by ion or laser beams. This work is part of a strategy for achieving illumination symmetry in such targets, which they propose as an alternative to those in the literature. This strategy allows an axially symmetric placement of beamlets, which would be convenient for some driver or reactor scenarios. It also allows the use of beam currents or energy fluxes to help reduce deposition asymmetry

  12. Supersonic cluster beams: a powerful method for the deposition of nanostructured thin films with tailored properties

    International Nuclear Information System (INIS)

    Milani, P.

    2002-01-01

    By using a pulsed micro-plasma cluster source and by exploiting aero-dynamical effects typical of supersonic beams it is possible to obtain very high deposition rates with a control on neutral cluster mass distribution, allowing the deposition of thin films with controlled nanostructure. Due to high deposition rates, high lateral resolution, low temperature processing supersonic cluster beams can also be used for the micro and nano-patterning of cluster-assembled films when little or no post-growth manipulation or assembly is required. For example the nano and meso-structure of films obtained by carbon cluster beam deposition can be controlled by selecting in the beam the elemental building blocks, moreover functional properties such as field emission can be controlled and tailored. The use of supersonic cluster beams opens also new perspectives for the production of nano-structured films with novel physico-chemical and topological properties such as nano-structured carbon matrices containing carbide and transition metal particles. (Author)

  13. Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

    International Nuclear Information System (INIS)

    Comes, Ryan; Liu Hongxue; Lu Jiwei; Gu, Man; Khokhlov, Mikhail; Wolf, Stuart A.

    2013-01-01

    Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

  14. The Impact of Beam Deposition on Bootstrap Current of Fast Ion Produced by Neutral Beam Tangential Injection

    International Nuclear Information System (INIS)

    Huang Qian-Hong; Gong Xue-Yu; Lu Xing-Qiang; Yu Jun; Cao Jin-Jia

    2015-01-01

    The density profile of fast ions arising from a tangentially injected diffuse neutral beam in tokamak plasma is calculated. The effects of mean free paths and beam tangency radius on the density profile are discussed under typical HL-2A plasmas parameters. The results show that the profile of fast ions is strongly peaked at the center of the plasma when the mean free path at the maximum deuteron density is larger than the minor radius, while the peak value decreases when the mean free path at the maximum deuteron density is larger than twice that of the minor radius due to the beam transmission loss. Moreover, the bootstrap current of fast ions for various mean free paths at the maximum deuteron density is calculated and its density is proved to be closely related to the deposition of the neutral beam. With the electron return current considered, the net current density obviously decreases. Meanwhile, the peak central fast ion density increases when the beam tangency radius approaches the major radius, and the net bootstrap current increases rapidly with the increasing beam tangency radius. (paper)

  15. Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

    Energy Technology Data Exchange (ETDEWEB)

    Awazu, Kaoru; Yoshida, Hiroyuki [Industrial Research Inst. of Ishikawa (Japan); Watanabe, Hiroshi [Gakushuin Univ., Tokyo (Japan); Iwaki, Masaya; Guzman, L [RIKEN, Saitama (Japan)

    1992-04-15

    A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C{sub 6}H{sub 6} gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10{sup 16} ions cm{sup -2}. The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.).

  16. Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

    International Nuclear Information System (INIS)

    Awazu, Kaoru; Yoshida, Hiroyuki; Watanabe, Hiroshi; Iwaki, Masaya; Guzman, L.

    1992-01-01

    A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C 6 H 6 gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10 16 ions cm -2 . The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.)

  17. Energy deposition of heavy ions in the regime of strong beam-plasma correlations.

    Science.gov (United States)

    Gericke, D O; Schlanges, M

    2003-03-01

    The energy loss of highly charged ions in dense plasmas is investigated. The applied model includes strong beam-plasma correlation via a quantum T-matrix treatment of the cross sections. Dynamic screening effects are modeled by using a Debye-like potential with a velocity dependent screening length that guarantees the known low and high beam velocity limits. It is shown that this phenomenological model is in good agreement with simulation data up to very high beam-plasma coupling. An analysis of the stopping process shows considerably longer ranges and a less localized energy deposition if strong coupling is treated properly.

  18. Electron pulsed beam induced processing of thin film surface by Nb3Ge deposited into a stainless steel tape

    International Nuclear Information System (INIS)

    Vavra, I.; Korenev, S.A.

    1988-01-01

    A surface of superconductive thin film of Nb 3 Ge deposited onto a stainless steel tape was processed using the electron beam technique. The electron beam used had the following parameters: beam current density from 400 to 1000 A/cm 2 ; beam energy 100 keV; beam impulse length 300 ns. By theoretical analysis it is shown that the heating of film surface is an adiabatic process. It corresponds to our experimental data and pictures showing a surface remelting due to electron beam influence. After beam processing the superconductive parameters of the film remain unchanged. Roentgenograms have been analysed of Nb 3 Ge film surface recrystallized due to electron beam influence

  19. Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition

    International Nuclear Information System (INIS)

    Ndiege, Nicholas; Subramanian, Vaidyanathan; Shannon, Mark A.; Masel, Richard I.

    2008-01-01

    Microwave-assisted chemical vapor deposition has been used to generate high quality, high-k dielectric films on silicon at high deposition rates with film thicknesses varying from 50 nm to 110 μm using inexpensive equipment. Characterization of the post deposition products was performed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Raman spectroscopy. Film growth was determined to occur via rapid formation and accumulation of tantalum oxide clusters from tantalum (v) ethoxide (Ta(OC 2 H 5 ) 5 ) vapor on the deposition surface

  20. Photocatalytic activity of tin-doped TiO{sub 2} film deposited via aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chua, Chin Sheng, E-mail: cschua@simtech.a-star.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Tan, Ooi Kiang; Tse, Man Siu [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Ding, Xingzhao [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore)

    2013-10-01

    Tin-doped TiO{sub 2} films are deposited via aerosol assisted chemical vapor deposition using a precursor mixture composing of titanium tetraisopropoxide and tetrabutyl tin. The amount of tin doping in the deposited films is controlled by the volume % concentration ratio of tetrabutyl tin over titanium tetraisopropoxide in the mixed precursor solution. X-ray diffraction analysis results reveal that the as-deposited films are composed of pure anatase TiO{sub 2} phase. Red-shift in the absorbance spectra is observed attributed to the introduction of Sn{sup 4+} band states below the conduction band of TiO{sub 2}. The effect of tin doping on the photocatalytic property of TiO{sub 2} films is studied through the degradation of stearic acid under UV light illumination. It is found that there is a 10% enhancement on the degradation rate of stearic acid for the film with 3.8% tin doping in comparison with pure TiO{sub 2} film. This improvement of photocatalytic performance with tin incorporation could be ascribed to the reduction of electron-hole recombination rate through charge separation and an increased amount of OH radicals which are crucial for the degradation of stearic acid. Further increase in tin doping results in the formation of recombination site and large anatase grains, which leads to a decrease in the degradation rate. - Highlights: ► Deposition of tin-doped TiO{sub 2} film via aerosol assisted chemical vapor depositionDeposited anatase films show red-shifted in UV–vis spectrum with tin-dopants. ► Photoactivity improves at low tin concentration but reduces at higher concentration. ► Improvement in photoactivity due to bandgap narrowing from Sn{sup 4+} band states ► Maximum photoactivity achieved occurs for films with 3.8% tin doping.

  1. Cumulative percent energy deposition of photon beam incident on different targets, simulated by Monte Carlo

    International Nuclear Information System (INIS)

    Kandic, A.; Jevremovic, T.; Boreli, F.

    1989-01-01

    Monte Carlo simulation (without secondary radiation) of the standard photon interactions (Compton scattering, photoelectric absorption and pair protection) for the complex slab's geometry is used in numerical code ACCA. A typical ACCA run will yield: (a) transmission of primary photon radiation differential in energy, (b) the spectrum of energy deposited in the target as a function of position and (c) the cumulative percent energy deposition as a function of position. A cumulative percent energy deposition of photon monoenergetic beam incident on simplest and complexity tissue slab and Fe slab are presented in this paper. (author). 5 refs.; 2 figs

  2. BIRTH: a beam deposition code for non-circular tokamak plasmas

    International Nuclear Information System (INIS)

    Otsuka, Michio; Nagami, Masayuki; Matsuda, Toshiaki

    1982-09-01

    A new beam deposition code has been developed which is capable of calculating fast ion deposition profiles including the orbit correction. The code incorporates any injection geometry and a non-circular cross section plasma with a variable elongation and an outward shift of the magnetic flux surface. Typical cpu time on a DEC-10 computer is 10 - 20 seconds and 5 - 10 seconds with and without the orbit correction, respectively. This is shorter by an order of magnitude than that of other codes, e.g., Monte Carlo codes. The power deposition profile calculated by this code is in good agreement with that calculated by a Monte Carlo code. (author)

  3. Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Brown, April S.; Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Morse, Michael [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

    2006-06-15

    We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350 C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450 C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Investigation of morphological changes in platinum-containing nanostructures created by electron-beam-induced deposition

    NARCIS (Netherlands)

    Botman, A.; Hesselberth, M.; Mulders, J.J.L.

    2008-01-01

    Focused electron-beam-induced deposition (EBID) allows the rapid fabrication of three-dimensional nanodevices and metallic wiring of nanostructures, and is a promising technique for many applications in nanoresearch. The authors present two topics on platinum-containing nanostructures created by

  5. The rational design of a Au(I) precursor for focused electron beam induced deposition

    NARCIS (Netherlands)

    Marashdeh, Ali; Tiesma, Thiadrik; van Velzen, Niels J. C.; Harder, Sjoerd; Havenith, Remco W. A.; De Hosson, Jeff T. M.; van Dorp, Willem F.

    2017-01-01

    Au(I) complexes are studied as precursors for focused electron beam induced processing (FEBIP). FEBIP is an advanced direct-write technique for nanometer-scale chemical synthesis. The stability and volatility of the complexes are characterized to design an improved precursor for pure Au deposition.

  6. Large flexibility of high aspect ratio carbon nanostructures fabricated by electron-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Beard, J D; Gordeev, S N, E-mail: jdb28@bath.ac.uk [Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom)

    2010-11-26

    The mechanical properties of free-standing electron beam deposited amorphous carbon structures have been studied using atomic force microscopy. The fabricated carbon blades are found to be extraordinarily flexible, capable of undergoing vertical deflection up to {approx} 75% of their total length without inelastic deformation. The elastic bending modulus of these structures was calculated to be 28 {+-} 10 GPa.

  7. Charging effects during focused electron beam induced deposition of silicon oxide

    NARCIS (Netherlands)

    de Boer, Sanne K.; van Dorp, Willem F.; De Hosson, Jeff Th. M.

    2011-01-01

    This paper concentrates on focused electron beam induced deposition of silicon oxide. Silicon oxide pillars are written using 2, 4, 6, 8, 10-pentamethyl-cyclopenta-siloxane (PMCPS) as precursor. It is observed that branching of the pillar occurs above a minimum pillar height. The branching is

  8. Towards high purity nanostructures from electron beam induced deposition of platinum

    NARCIS (Netherlands)

    Botman, A.P.J.M.

    2009-01-01

    Electron beam induced deposition (EBID) is a novel nanofabrication technique allowing the rapid prototyping of three-dimensional nanodevices and the metallic wiring of nanostructures, and is a promising technique for many applications in nanoresearch. EBID is a process wherein a precursor molecule

  9. Process-structure-property relationships of micron thick gadolinium oxide films deposited by reactive electron beam-physical vapor deposition (EB-PVD)

    Science.gov (United States)

    Grave, Daniel A.

    Gadolinium oxide (Gd2O3) is an attractive material for solid state neutron detection due to gadolinium's high thermal neutron capture cross section. Development of neutron detectors based on Gd2 O3 requires sufficiently thick films to ensure neutron absorption. In this dissertation work, the process-structure-property relationships of micron thick Gd2O3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD) were studied. Through a systematic design of experiments, fundamental studies were conducted to determine the effects of processing conditions such as deposition temperature, oxygen flow rate, deposition rate, and substrate material on Gd2O3 film crystallographic phase, texture, morphology, grain size, density, and surface roughness. Films deposited at high rates (> 5 A/s) were examined via x-ray diffraction (XRD) and Raman spectroscopy. Quantitative phase volume calculations were performed via a Rietveld refinement technique. All films deposited at high rates were found to be fully monoclinic or mixed cubic/monoclinic phase. Generally, increased deposition temperature and increased oxygen flow resulted in increased cubic phase volume. As film thickness increased, monoclinic phase volume increased. Grazing incidence x-ray diffraction (GIXRD) depth profiling analysis showed that cubic phase was only present under large incidence angle (large penetration depth) measurements, and after a certain point, only monoclinic phase was grown. This was confirmed by transmission electron microscopy (TEM) analysis with selected area diffraction (SAD). Based on this information, a large compressive stress was hypothesized to cause the formation of the monoclinic phase and this hypothesis was confirmed by demonstrating the existence of a stress induced phase transition. An experiment was designed to introduce compressive stress into the Gd2O 3 films via ion beam assisted deposition (IBAD). This allowed for systematic increase in compressive stress while

  10. Nano/micro particle beam for ceramic deposition and mechanical etching

    International Nuclear Information System (INIS)

    Chun, Doo-Man; Kim, Min-Saeng; Kim, Min-Hyeng; Ahn, Sung-Hoon; Yeo, Jun-Cheol; Lee, Caroline Sunyong

    2010-01-01

    Nano/micro particle beam (NPB) is a newly developed ceramic deposition and mechanical etching process. Additive (deposition) and subtractive (mechanical etching) processes can be realized in one manufacturing process using ceramic nano/micro particles. Nano- or micro-sized powders are sprayed through the supersonic nozzle at room temperature and low vacuum conditions. According to the process conditions, the ceramic powder can be deposited on metal substrates without thermal damage, and mechanical etching can be conducted in the same process with a simple change of process conditions and powders. In the present work, ceramic aluminum oxide (Al 2 O 3 ) thin films were deposited on metal substrates. In addition, the glass substrate was etched using a mask to make small channels. Deposited and mechanically etched surface morphology, coating thickness and channel depth were investigated. The test results showed that the NPB provides a feasible additive and subtractive process using ceramic powders.

  11. Purity and resistivity improvements for electron-beam-induced deposition of Pt

    Energy Technology Data Exchange (ETDEWEB)

    Mulders, J.J.L. [FEI Company, Eindhoven (Netherlands)

    2014-12-15

    Electron-beam-induced deposition (EBID) of platinum is used by many researchers. Its main application is the formation of a protective layer and the ''welding material'' for making a TEM lamella with a focused ion beam thinning process. For this application, the actual composition of the deposition is less relevant, and in practice, both the mechanical strength and the conductivity are sufficient. Another important application is the creation of an electrical connection to nanoscale structures such as nano-wires and graphene. To serve as an electrical contact, the resistivity of the Pt deposited structure has to be sufficiently low. Using the commonly used precursor MeCpPtMe{sub 3} for deposition, the resistivity as created by the basic process is 10{sup +5}-10{sup +6} higher than the value for bulk Pt, which is 10.6 μΩ cm. The reason for this is the high abundance of carbon in the deposition. To improve the deposition process, much attention has been given by the research community to parameter optimization, to ex situ or in situ removal of carbon by anneal steps, to prevention of carbon deposition by use of a carbon-free precursor, to electron beam irradiation under a high flux of oxygen and to the combination with other techniques such as atomic layer deposition (ALD). In the latter technique, the EBID structures are used as a 1-nm-thick seed layer only, while the ALD is used to selectively add pure Pt. These techniques have resulted in a low resistivity, today approaching the 10-150 μΩ cm, while the size and shape of the structure are preserved. Therefore, now, the technique is ready for application in the field of contacting nano-wires. (orig.)

  12. WOx cluster formation in radio frequency assisted pulsed laser deposition

    International Nuclear Information System (INIS)

    Filipescu, M.; Ossi, P.M.; Dinescu, M.

    2007-01-01

    The influence of oxygen gas pressure and radio-frequency power on the characteristics of the WO x films produced by laser ablation of a W target at room temperature in oxygen reactive atmosphere were investigated. Changing buffer gas pressure in the hundreds of Pa range affects the bond coordination, roughness and morphology of the deposited films, as investigated by micro-Raman spectroscopy, atomic force microscopy and scanning electron microscopy. The combination of radio-frequency discharge and buffer gas pressure on film nanostructure, as reflected by bond coordination, surface morphology and roughness is discussed

  13. Effect of deposition rate on the microstructure of electron beam evaporated nanocrystalline palladium thin films

    Energy Technology Data Exchange (ETDEWEB)

    Amin-Ahmadi, B., E-mail: behnam.amin-ahmadi@ua.ac.be [Electron Microscopy for Materials Science (EMAT), Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Idrissi, H. [Electron Microscopy for Materials Science (EMAT), Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Galceran, M. [Université Libre de Bruxelles, Matters and Materials Department, 50 Av. FD Roosevelt CP194/03, 1050 Brussels (Belgium); Colla, M.S. [Institute of Mechanics, Materials and Civil Engineering, Université catholique de Louvain, Place Sainte Barbe 2, B-1348 Louvain-la-Neuve (Belgium); Raskin, J.P. [Information and Communications Technologies, Electronics and Applied Mathematics (ICTEAM), Microwave Laboratory, Université catholique de Louvain, B-1348 Louvain-la-Neuve (Belgium); Pardoen, T. [Institute of Mechanics, Materials and Civil Engineering, Université catholique de Louvain, Place Sainte Barbe 2, B-1348 Louvain-la-Neuve (Belgium); Godet, S. [Université Libre de Bruxelles, Matters and Materials Department, 50 Av. FD Roosevelt CP194/03, 1050 Brussels (Belgium); Schryvers, D. [Electron Microscopy for Materials Science (EMAT), Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium)

    2013-07-31

    The influence of the deposition rate on the formation of growth twins in nanocrystalline Pd films deposited by electron beam evaporation is investigated using transmission electron microscopy. Statistical measurements prove that twin boundary (TB) density and volume fraction of grains containing twins increase with increasing deposition rate. A clear increase of the dislocation density was observed for the highest deposition rate of 5 Å/s, caused by the increase of the internal stress building up during deposition. Based on crystallographic orientation indexation using transmission electron microscopy, it can be concluded that a {111} crystallographic texture increases with increasing deposition rate even though the {101} crystallographic texture remains dominant. Most of the TBs are fully coherent without any residual dislocations. However, for the highest deposition rate (5 Å/s), the coherency of the TBs decreases significantly as a result of the interaction of lattice dislocations emitted during deposition with the growth TBs. The analysis of the grain boundary character of different Pd films shows that an increasing fraction of high angle grain boundaries with misorientation angles around 55–65° leads to a higher potential for twin formation. - Highlights: • Fraction of twinned grains and twin boundary density increase with deposition rate. • Clear increase of dislocation density was observed for the highest deposition rate. • A moderate increase of the mean grain size with increase of deposition rate is found. • For the highest deposition rate, the twin boundaries lose their coherency. • Fraction of high angle grain boundary (55–65) increases with deposition rate.

  14. Fabrication of bright and thin Zn₂SiO₄ luminescent film for electron beam excitation-assisted optical microscope.

    Science.gov (United States)

    Furukawa, Taichi; Kanamori, Satoshi; Fukuta, Masahiro; Nawa, Yasunori; Kominami, Hiroko; Nakanishi, Yoichiro; Sugita, Atsushi; Inami, Wataru; Kawata, Yoshimasa

    2015-07-13

    We fabricated a bright and thin Zn₂SiO₄ luminescent film to serve as a nanometric light source for high-spatial-resolution optical microscopy based on electron beam excitation. The Zn₂SiO₄ luminescent thin film was fabricated by annealing a ZnO film on a Si₃N₄ substrate at 1000 °C in N₂. The annealed film emitted bright cathodoluminescence compared with the as-deposited film. The film is promising for nano-imaging with electron beam excitation-assisted optical microscopy. We evaluated the spatial resolution of a microscope developed using this Zn₂SiO₄ luminescent thin film. This is the first report of the investigation and application of ZnO/Si₃N₄ annealed at a high temperature (1000 °C). The fabricated Zn₂SiO₄ film is expected to enable high-frame-rate dynamic observation with ultra-high resolution using our electron beam excitation-assisted optical microscopy.

  15. Improvement of copper plating adhesion on silane modified PET film by ultrasonic-assisted electroless deposition

    International Nuclear Information System (INIS)

    Lu Yinxiang

    2010-01-01

    Copper thin film on silane modified poly(ethylene terephthalate) (PET) substrate was fabricated by ultrasonic-assisted electroless deposition. The composition and topography of copper plating PET films were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Peel adhesion strength, as high as 16.7 N/cm, was achieved for the planting copper layer to the modified PET substrate with ultrasonic-assisted deposition; however, a relative low value as 11.9 N/cm was obtained for the sample without ultrasonic vibration by the same measurement. The electrical conductivity of Cu film was changed from 7.9 x 10 4 to 2.1 x 10 5 S/cm by using ultrasonic technique. Ultrasonic operation has the significant merits of fast deposition and formation of good membranes for electroless deposition of Cu on PET film.

  16. An ion-beam-assisted process for high-Tc Josephson junctions

    International Nuclear Information System (INIS)

    Huang, M.Q.; Chen, L.; Zhao, Z.X.; Yang, T.; Nie, J.C.; Wu, P.J.; Xiong, X.M.

    1997-01-01

    We have developed a non-ion-etching ion-beam-assisted-deposition (IBAD) process for fabricating high critical-temperature (T c ) grain boundary Josephson junctions through a photoresist liftoff mask. The YBa 2 Cu 3 O 7 (YBCO) junctions fabricated through this process exhibited the resistively-shunted-junction (RSJ)-like I - V characteristics. The well-defined Shapiro steps have been seen on the I - V curves under microwave radiation. The magnetic modulation of critical current of a 4 μm width YBCO junction tallied with the prior simulated Fraunhofer diffraction pattern of a Josephson junction with a spatially homogeneous critical current density. The maximum peak-to-peak modulation voltage across the dc superconducting quantum interference device (SQUID) fabricated by using these junctions reached up to 32 μV at 77 K. The magnetic modulation of the SQUID exhibited periodic behavior with the observed modulation period of 5.0x10 -4 G. copyright 1997 American Institute of Physics

  17. Automated setup for spray assisted layer-by-layer deposition.

    Science.gov (United States)

    Mundra, Paul; Otto, Tobias; Gaponik, Nikolai; Eychmüller, Alexander

    2013-07-01

    The design for a setup allowing the layer-by-layer (LbL) assembly of thin films consisting of various colloidal materials is presented. The proposed system utilizes the spray-assisted LbL approach and is capable of autonomously producing films. It provides advantages to existing LbL procedures in terms of process speed and applicability. The setup offers several features that are advantageous for routine operation like an actuated sample holder, stainless steel spraying nozzles, or an optical liquid detection system. The applicability is demonstrated by the preparation of films containing semiconductor nanoparticles, namely, CdSe∕CdS quantum dots and a polyelectolyte. The films of this type are of potential interest for applications in optoelectronic devices such as light-emitting diodes or solar cells.

  18. Characteristics of thin film fullerene coatings formed under different deposition conditions by power ion beams

    International Nuclear Information System (INIS)

    Petrov, A.V.; Ryabchikov, A.I.; Struts, V.K.; Usov, Yu.P.; Renk, T.J.

    2007-01-01

    Carbon allotropic form - C 60 and C 70 can be used in microelectronics, superconductors, solar batteries, logic and memory devices to increase processing tool wear resistance, as magnetic nanocomposite materials for record and storage information, in biology, medicine and pharmacology. In many cases it is necessary to have a thin-film containing C 60 and C 70 fullerene carbon coatings. A possibility in principle of thin carbon films formation with nanocrystalline structure and high content ∼30-95% of C 60 and C 70 fullerene mixture using the method of graphite targets sputtering by a power ion beam has been shown. Formation of thin-film containing C 60 and C 70 fullerene carbon coatings were carried out by means of deposition of ablation plasma on silicon substrates. Ablation plasma was generated as result of interaction of high-power pulsed ion beams (HPPIB) with graphite targets of different densities. It has been demonstrated that formation of fullerenes, their amount and characteristics of thin-film coatings depend on the deposition conditions. The key parameter for such process is the deposition rate, which determines thin film formation conditions and, subsequently, its structure and mechanical properties. Nano-hardness, Young module, adhesion to mono-crystalline silicon substrate, friction coefficient, roughness surface of synthesized coatings at the different deposition conditions were measured. These characteristics are under influence of such main process parameters as energy density of HPPIB, which, in turn, determinates the density and temperature of ablation plasma and deposition speed, which is thickness of film deposited for one pulse of ion current. Nano-hardness and Young module meanings are higher at the increasing of power density of ion beam. Adhesion value is less at the high deposition speed. As rule, friction coefficient depends on vice versa from roughness. (authors)

  19. Energy Deposition in Adjacent LHC Superconducting Magnets from Beam Loss at LHC Transfer Line Collimators

    CERN Document Server

    Beavan, S; Kain, V

    2006-01-01

    Injection intensities for the LHC are over an order of magnitude above the damage threshold. The collimation system in the two transfer lines is designed to dilute the beam sufficiently to avoid damage in case of accidental beam loss or mis-steered beam. To maximise the protection for the LHC most of the collimators are located in the last 300 m upstream of the injection point where the transfer lines approach the LHC machine. To study the issue of possible quenches following beam loss at the collimators part of the collimation section in one of the lines, TI 8, together with the adjacent part of the LHC has been modeled in FLUKA. The simulated energy deposition in the LHC for worst-case accidental losses and as well as for losses expected during a normal filling is presented.

  20. Plasma based Ar+ beam assisted poly(dimethylsiloxane) surface modification

    International Nuclear Information System (INIS)

    Vladkova, T.G.; Keranov, I.L.; Dineff, P.D.; Youroukov, S.Y.; Avramova, I.A.; Krasteva, N.; Altankov, G.P.

    2005-01-01

    Plasma based Ar + beam performed in RF (13.56 MHz) low-pressure (200 mTorr) glow discharge (at 100 W, 1200 W and 2500 W) with a serial capacitance was employed for surface modification of poly(dimethylsiloxane) (PDMS) aimed at improvement of its interactions with living cells. The presence of a serial capacitance ensures arise of an ion-flow inside the plasma volume directed toward the treated sample and the vary of the discharge power ensures varied density of the ion-flow. XPS analysis was performed to study the changes in the surface chemical composition of the modified samples and the corresponding changes in the surface energy were monitored by contact angle measurements. We found that plasma based Ar + beam transforms the initially hydrophobic PDMS surface into a hydrophilic one mainly due to a raising of the polar component of the surface tension, this effect being most probably due to an enrichment of the modified surface layer with permanent dipoles of a [SiO x ]-based network and elimination of the original methyl groups. The initial adhesion of human fibroblast cells was studied on the described above plasma based Ar + beam modified and acrylic acid (AA) grafted or not fibronectin (FN) pre-coated or bare surfaces. The cell response seems to be related with the peculiar structure and wettability of the modified PDMS surface layer after plasma based Ar + beam treatment followed or not by AA grafting

  1. Large-aperture plasma-assisted deposition of inertial confinement fusion laser coatings.

    Science.gov (United States)

    Oliver, James B; Kupinski, Pete; Rigatti, Amy L; Schmid, Ansgar W; Lambropoulos, John C; Papernov, Semyon; Kozlov, Alexei; Spaulding, John; Sadowski, Daniel; Chrzan, Z Roman; Hand, Robert D; Gibson, Desmond R; Brinkley, Ian; Placido, Frank

    2011-03-20

    Plasma-assisted electron-beam evaporation leads to changes in the crystallinity, density, and stresses of thin films. A dual-source plasma system provides stress control of large-aperture, high-fluence coatings used in vacuum for substrates 1m in aperture.

  2. Electron-beam induced deposition and autocatalytic decomposition of Co(CO3NO

    Directory of Open Access Journals (Sweden)

    Florian Vollnhals

    2014-07-01

    Full Text Available The autocatalytic growth of arbitrarily shaped nanostructures fabricated by electron beam-induced deposition (EBID and electron beam-induced surface activation (EBISA is studied for two precursors: iron pentacarbonyl, Fe(CO5, and cobalt tricarbonyl nitrosyl, Co(CO3NO. Different deposits are prepared on silicon nitride membranes and silicon wafers under ultrahigh vacuum conditions, and are studied by scanning electron microscopy (SEM and scanning transmission X-ray microscopy (STXM, including near edge X-ray absorption fine structure (NEXAFS spectroscopy. It has previously been shown that Fe(CO5 decomposes autocatalytically on Fe seed layers (EBID and on certain electron beam-activated surfaces, yielding high purity, polycrystalline Fe nanostructures. In this contribution, we investigate the growth of structures from Co(CO3NO and compare it to results obtained from Fe(CO5. Co(CO3NO exhibits autocatalytic growth on Co-containing seed layers prepared by EBID using the same precursor. The growth yields granular, oxygen-, carbon- and nitrogen-containing deposits. In contrast to Fe(CO5 no decomposition on electron beam-activated surfaces is observed. In addition, we show that the autocatalytic growth of nanostructures from Co(CO3NO can also be initiated by an Fe seed layer, which presents a novel approach to the fabrication of layered nanostructures.

  3. The electron beam deposition of titanium on polyetheretherketone (PEEK) and the resulting enhanced biological properties.

    Science.gov (United States)

    Han, Cheol-Min; Lee, Eun-Jung; Kim, Hyoun-Ee; Koh, Young-Hag; Kim, Keung N; Ha, Yoon; Kuh, Sung-Uk

    2010-05-01

    The surface of polyetheretherketone (PEEK) was coated with a pure titanium (Ti) layer using an electron beam (e-beam) deposition method in order to enhance its biocompatibility and adhesion to bone tissue. The e-beam deposition method was a low-temperature coating process that formed a dense, uniform and well crystallized Ti layer without deteriorating the characteristics of the PEEK implant. The Ti coating layer strongly adhered to the substrate and remarkably enhanced its wettability. The Ti-coated samples were evaluated in terms of their in vitro cellular behaviors and in vivo osteointegration, and the results were compared to a pure PEEK substrate. The level of proliferation of the cells (MC3T3-E1) was measured using a methoxyphenyl tetrazolium salt (MTS) assay and more than doubled after the Ti coating. The differentiation level of cells was measured using the alkaline phosphatase (ALP) assay and also doubled. Furthermore, the in vivo animal tests showed that the Ti-coated PEEK implants had a much higher bone-in-contact (BIC) ratio than the pure PEEK implants. These in vitro and in vivo results suggested that the e-beam deposited Ti coating significantly improved the potential of PEEK for hard tissue applications. Copyright 2009 Elsevier Ltd. All rights reserved.

  4. Kinetic study on hot-wire-assisted atomic layer deposition of nickel thin films

    International Nuclear Information System (INIS)

    Yuan, Guangjie; Shimizu, Hideharu; Momose, Takeshi; Shimogaki, Yukihiro

    2014-01-01

    High-purity Ni films were deposited using hot-wire-assisted atomic layer deposition (HW-ALD) at deposition temperatures of 175, 250, and 350 °C. Negligible amount of nitrogen or carbon contamination was detected, even though the authors used NH 2 radical as the reducing agent and nickelocene as the precursor. NH 2 radicals were generated by the thermal decomposition of NH 3 with the assist of HW and used to reduce the adsorbed metal growth precursors. To understand and improve the deposition process, the kinetics of HW-ALD were analyzed using a Langmuir-type model. Unlike remote-plasma-enhanced atomic layer deposition, HW-ALD does not lead to plasma-induced damage. This is a significant advantage, because the authors can supply sufficient NH 2 radicals to deposit high-purity metallic films by adjusting the distance between the hot wire and the substrate. NH 2 radicals have a short lifetime, and it was important to use a short distance between the radical generation site and substrate. Furthermore, the impurity content of the nickel films was independent of the deposition temperature, which is evidence of the temperature-independent nature of the NH 2 radical flux and the reactivity of the NH 2 radicals

  5. UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

    International Nuclear Information System (INIS)

    Toftmann, B.; Papantonakis, M.R.; Auyeung, R.C.Y.; Kim, W.; O'Malley, S.M.; Bubb, D.M.; Horwitz, J.S.; Schou, J.; Johansen, P.M.; Haglund, R.F.

    2004-01-01

    A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR-PLD). For the first time resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) was successfully demonstrated on a luminescent polymer system. In addition to this, an excimer laser has been used for UV-MAPLE depositions at 193 and 248-nm irradiation. Films deposited onto NaCl and quartz substrates were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence

  6. UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

    DEFF Research Database (Denmark)

    Christensen, Bo Toftmann; Papantonalis, M.R.; Auyeung, R.C.Y.

    2004-01-01

    -PLD). For the first time resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) was successfully demonstrated on a luminescent polymer system. In addition to this, an excimer laser has been used for UV-MAPLE depositions at 193 and 248-nm irradiation. Films deposited onto NaCl and quartz substrates......A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly [2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR...... were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence. (C) 2003...

  7. Experimental Results of Network-Assisted Interference Suppression Scheme Using Adaptive Beam-Tilt Switching

    Directory of Open Access Journals (Sweden)

    Tomoki Murakami

    2017-01-01

    Full Text Available This paper introduces a network-assisted interference suppression scheme using beam-tilt switching per frame for wireless local area network systems and its effectiveness in an actual indoor environment. In the proposed scheme, two access points simultaneously transmit to their own desired station by adjusting angle of beam-tilt including transmit power assisted from network server for the improvement of system throughput. In the conventional researches, it is widely known that beam-tilt is effective for ICI suppression in the outdoor scenario. However, the indoor effectiveness of beam-tilt for ICI suppression has not yet been indicated from the experimental evaluation. Thus, this paper indicates the effectiveness of the proposed scheme by analyzing multiple-input multiple-output channel matrices from experimental measurements in an office environment. The experimental results clearly show that the proposed scheme offers higher system throughput than the conventional scheme using just transmit power control.

  8. Site control technique for quantum dots using electron beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-saitama, Saitama 3458501 (Japan)

    2014-05-15

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

  9. Site control technique for quantum dots using electron beam induced deposition

    International Nuclear Information System (INIS)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi

    2014-01-01

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement

  10. Multisample matrix-assisted laser desorption source for molecular beams of neutral peptides

    International Nuclear Information System (INIS)

    Lupulescu, C.; Abd El Rahim, M.; Antoine, R.; Barbaire, M.; Broyer, M.; Dagany, X.; Maurelli, J.; Rayane, D.; Dugourd, Ph.

    2006-01-01

    We developed and tested a multisample laser desorption source for producing stable molecular beams of neutral peptides. Our apparatus is based on matrix-assisted laser desorption technique. The source consists of 96 different targets which may be scanned by a software control procedure. Examples of molecular beams of neutral peptides are presented, as well as the influence of the different source parameters on the jet

  11. Deposition of thin films by retardation of an isotope separator beam

    International Nuclear Information System (INIS)

    Colligon, J.S.; Grant, W.A.; Williams, J.S.; Lawson, R.P.W.

    1976-01-01

    An ion optical lens system capable of retarding and focusing a mass-analysed ion beam, produced in the University of Salford isotope separator, from an energy of 20 keV to 50-60 eV is described. Using this system it is technically feasible to deposit spectroscopically pure ions of all species onto a substrate to produce thin film for devices and junctions. Preliminary investigations of the technique have been carried out using lead and copper ions which were deposited onto silicon single-crystal substrates. These ions were selected because their high mass relative to silicon allowed analyses of the deposited films by low-angle Rutherford backscattering of 2 MeV He ions; the single-crystal silicon substrate enabled the extent of damage due to unretarded neutral particles to be estimated from channelling data. Results for lead films showed that films less than 150 A in thickness were discontinuous and scanning electron microscopy confirmed their 'island' structure. For thicker deposits, of order 600 A, the films were continuous. Results are also presented for copper-lead sandwich layers produced by successive depositions. Channelling experiments indicated that the neutral component was less than 5% of the total ion-beam intensity. Investigations of the spatial distribution of the lead films indicated a non-uniformity which, it is suggested, arises from a fault in the retardation lens design. (author)

  12. The minimum amount of "matrix " needed for matrix-assisted pulsed laser deposition of biomolecules

    DEFF Research Database (Denmark)

    Tabetah, Marshall; Matei, Andreea; Constantinescu, Catalin

    2014-01-01

    The ability of matrix-assisted pulsed laser evaporation (MAPLE) technique to transfer and deposit high-quality thin organic, bioorganic, and composite films with minimum chemical modification of the target material has been utilized in numerous applications. One of the outstanding problems in MAPLE...

  13. Comparative study on Pulsed Laser Deposition and Matrix Assisted Pulsed Laser Evaporation of urease thin films

    International Nuclear Information System (INIS)

    Smausz, Tomi; Megyeri, Gabor; Kekesi, Renata; Vass, Csaba; Gyoergy, Eniko; Sima, Felix; Mihailescu, Ion N.; Hopp, Bela

    2009-01-01

    Urease thin films were produced by Matrix Assisted Pulsed Laser Evaporation (MAPLE) and Pulsed Laser Deposition from two types of targets: frozen water solutions of urease with different concentrations (1-10% m/v) and pure urease pellets. The fluence of the ablating KrF excimer laser was varied between 300 and 2200 mJ/cm 2 . Fourier transform infrared spectra of the deposited films showed no difference as compared to the original urease. Morphologic studies proved that the films consist of a smooth 'base' layer with embedded micrometer-sized droplets. Absorption-coefficient measurements contradicted the traditional 'absorptive matrix' model for MAPLE deposition. The laser energy was absorbed by urease clusters leading to a local heating-up and evaporation of the frozen matrix from the uppermost layer accompanied by the release of dissolved urease molecules. Significant enzymatic activity of urease was preserved only during matrix assisted transfer.

  14. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    International Nuclear Information System (INIS)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-01-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar + ion beam, we cleaned the polymer residue without damaging the graphene network. HfO 2 grown by atomic layer deposition on graphene cleaned using an Ar + ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar + ion cleaning) showed a non-uniform structure. A graphene–HfO 2 –metal capacitor fabricated by growing 20-nm thick HfO 2 on graphene exhibited a very low leakage current (<10 −11 A/cm 2 ) for Ar + ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  15. The charge deposition in the numerical simulation of high-current beam

    International Nuclear Information System (INIS)

    Wang Shijun

    1987-01-01

    A new method of charge deposition of high-current beam, conservation-map method, is given. THe advantages of Neil's and other various methods are adopted. The mistake of Neil's method and the limitation of other various methods is discarded. So the method is accurate without additional assumption. The method not only applies to the case of steady laminar flow but also applies to the case of steady non-laminar flow

  16. Characterization of copper thin films prepared by metal self-ion beam sputter deposition

    International Nuclear Information System (INIS)

    Gotoh, Yasuhito; Amioka, Takao; Tsuji, Hiroshi; Ishikawa, Junzo

    1994-01-01

    New deposition technique, 'metal-ion beam self-sputtering' method has been developed. Using metal ions which is the same element with the target material, no contamination with noble gas atoms, which are often used in the conventional sputtering, will occur. In this paper, fundamental measurement of the film purity is reported. As a result of PIXE measurements, it was clarified that only slight amount of iron is incorporated in the films. (author)

  17. Effect of ion beam irradiation on the structure of ZnO films deposited by a dc arc plasmatron.

    Science.gov (United States)

    Penkov, Oleksiy V; Lee, Heon-Ju; Plaksin, Vadim Yu; Ko, Min Gook; Joa, Sang Beom; Yim, Chan Joo

    2008-02-01

    The deposition of polycrystalline ZnO film on a cold substrate was performed by using a plasmatron in rough vacuum condition. Low energy oxygen ion beam generated by a cold cathode ion source was introduced during the deposition process. The change of film property on the ion beam energy was checked. It is shown that irradiation by 200 eV ions improves crystalline structure of the film. Increasing of ion beam energy up to 400 eV leads to the degradation of a crystalline structure and decreases the deposition rate.

  18. Ohmic contact junction of carbon nanotubes fabricated by in situ electron beam deposition

    International Nuclear Information System (INIS)

    Wang, Y G; Wang, T H; Lin, X W; Dravid, V P

    2006-01-01

    We present experimental evidence of in situ fabrication of multi-walled carbon nanotube junctions via electron beam induced deposition. The tip-to-tip interconnection of the nanotubes involves the alignment of two nanotubes via a piezodriven nanomanipulator and nano-welding by electron beam deposition. Hydrocarbon contamination from the pump oil vapour of the vacuum system of the TEM chamber was used as the solder; this is superior to the already available metallic solders because its composition is identical to the carbon nanotube. The hydrocarbon deposition, with perfect wettability, on the nanotubes establishes strong mechanical binding between the two nanotubes to form an integrated structure. Consequently, the nanotubes cross-linked by the hydrocarbon solder produce good electrical and mechanical connections. The joint dimension was determined by the size of the electron beam, which results in a sound junction with well-defined geometry and the smallest junction size obtained so far. In situ electric measurement showed a linear current-voltage property for the multi-walled nanotube junction

  19. Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings

    Directory of Open Access Journals (Sweden)

    Januś M.

    2015-06-01

    Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

  20. Copper nanorod array assisted silicon waveguide polarization beam splitter.

    Science.gov (United States)

    Kim, Sangsik; Qi, Minghao

    2014-04-21

    We present the design of a three-dimensional (3D) polarization beam splitter (PBS) with a copper nanorod array placed between two silicon waveguides. The localized surface plasmon resonance (LSPR) of a metal nanorod array selectively cross-couples transverse electric (TE) mode to the coupler waveguide, while transverse magnetic (TM) mode passes through the original input waveguide without coupling. An ultra-compact and broadband PBS compared to all-dielectric devices is achieved with the LSPR. The output ports of waveguides are designed to support either TM or TE mode only to enhance the extinction ratios. Compared to silver, copper is fully compatible with complementary metal-oxide-semiconductor (CMOS) technology.

  1. In situ growth optimization in focused electron-beam induced deposition

    Directory of Open Access Journals (Sweden)

    Paul M. Weirich

    2013-12-01

    Full Text Available We present the application of an evolutionary genetic algorithm for the in situ optimization of nanostructures that are prepared by focused electron-beam-induced deposition (FEBID. It allows us to tune the properties of the deposits towards the highest conductivity by using the time gradient of the measured in situ rate of change of conductance as the fitness parameter for the algorithm. The effectiveness of the procedure is presented for the precursor W(CO6 as well as for post-treatment of Pt–C deposits, which were obtained by the dissociation of MeCpPt(Me3. For W(CO6-based structures an increase of conductivity by one order of magnitude can be achieved, whereas the effect for MeCpPt(Me3 is largely suppressed. The presented technique can be applied to all beam-induced deposition processes and has great potential for a further optimization or tuning of parameters for nanostructures that are prepared by FEBID or related techniques.

  2. Low-energy ion-beam deposition apparatus equipped with surface analysis system

    International Nuclear Information System (INIS)

    Ohno, Hideki; Aoki, Yasushi; Nagai, Siro.

    1994-10-01

    A sophisticated apparatus for low energy ion beam deposition (IBD) was installed at Takasaki Radiation Chemistry Research Establishment of JAERI in March 1991. The apparatus is composed of an IBD system and a real time/in-situ surface analysis system for diagnosing deposited thin films. The IBD system provides various kinds of low energy ion down to 10 eV with current density of 10 μA/cm 2 and irradiation area of 15x15 mm 2 . The surface analysis system consists of RHEED, AES, ISS and SIMS. This report describes the characteristics and the operation procedure of the apparatus together with some experimental results on depositing thin carbon films. (author)

  3. Processing-structure-property relationships in electron beam physical vapor deposited yttria stabilized zirconia coatings

    International Nuclear Information System (INIS)

    Rao, D. Srinivasa; Valleti, Krishna; Joshi, S. V.; Janardhan, G. Ranga

    2011-01-01

    The physical and mechanical properties of yttria stabilized zirconia (YSZ) coatings deposited by the electron beam physical vapor deposition technique have been investigated by varying the key process variables such as vapor incidence angle and sample rotation speed. The tetragonal zirconia coatings formed under varying process conditions employed were found to have widely different surface and cross-sectional morphologies. The porosity, phase composition, planar orientation, hardness, adhesion, and surface residual stresses in the coated specimens were comprehensively evaluated to develop a correlation with the process variables. Under transverse scratch test conditions, the YSZ coatings exhibited two different crack formation modes, depending on the magnitude of residual stress. The influence of processing conditions on the coating deposition rate, column orientation angle, and adhesion strength has been established. Key relationships between porosity, hardness, and adhesion are also presented.

  4. CdS thin films prepared by laser assisted chemical bath deposition

    International Nuclear Information System (INIS)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A.; Krishnan, B.; Avellaneda, D.; Castillo, G.A.; Das Roy, T.K.; Shaji, S.

    2015-01-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties

  5. CdS thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

  6. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, H. Y.; Yang, W. C.; Lee, P. Y.; Lin, C. W.; Cheng, Kai-Yuan; Hsieh, K. C.; Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw [Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Hsu, C.-H. [Division of Scientific Research, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2016-08-22

    GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

  7. Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Colombo, C.; Spirkoska, D.; Frimmer, M.; Abstreiter, G.; Fontcuberta i Morral, A.

    2008-01-01

    The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are addressed. The axial and radial growth rates as a function of the Ga rate and As pressure indicate that on the opposite of what is observed in thin film epitaxy, the growth rate of the nanowires is arsenic limited. As a consequence, the axial growth rate of the wires can be controlled by the As 4 pressure. Additionally, due to the small As 4 pressure leading to nanowire growth, the deposition on the facets is very slow, leading to a much lower radial growth rate. Finally, we present a model that is able to accurately describe the presented observations and predicts a maximum length of nontapered nanowires of 40 μm

  8. The growth of III-V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Beh, K.P.; Yam, F.K.; Chin, C.W.; Tneh, S.S.; Hassan, Z.

    2010-01-01

    This paper reports the growth of InGaN/GaN/AlN epitaxial layer on Si(1 1 1) substrate by utilizing plasma-assisted molecular beam epitaxy (PA-MBE) system. The as-grown film was characterized using high-resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). High work function metals, iridium and gold were deposited on the film as metal contacts and their electrical characteristics at pre- and post-annealing were studied. The structural quality of this film is comparative to the values reported in the literature, and the indium molar fraction is 0.57 by employing Vegard's law. The relatively low yellow band emission signifies the grown film is of high quality. For metal contact studies it was found that the post-annealed sample for 5 min shows good conductivity as compared to the other samples.

  9. Mass transfer in silicon at deposition of Ti thin films assisted by self ion irradiation

    International Nuclear Information System (INIS)

    Mikhalkovich, O.M.; Tashlykov, I.S.; Gusakov, V.E.

    2011-01-01

    In this paper a composite structure, processes of diffusion in Si, modified by means of ion-assisted deposition of coatings in conditions of a self-irradiation are discussed. Rutherford backscattering in combination with a channelling (RBS/Ch) of He + ions and computer program RUMP were applied to investigate an element composition. It is established, that coatings include atoms of metal, hydrogen, carbon, oxygen, silicon. The interstitial Si atoms, generated by radiation effect, diffuse during deposition of thin coating, both in a depth of a wafers, and in coatings. The influence of irradiation of ions Xe+ on diffusion processes in silicon are revealed. (authors)

  10. Electron beam lithographic modeling assisted by artificial intelligence technology

    Science.gov (United States)

    Nakayamada, Noriaki; Nishimura, Rieko; Miura, Satoru; Nomura, Haruyuki; Kamikubo, Takashi

    2017-07-01

    We propose a new concept of tuning a point-spread function (a "kernel" function) in the modeling of electron beam lithography using the machine learning scheme. Normally in the work of artificial intelligence, the researchers focus on the output results from a neural network, such as success ratio in image recognition or improved production yield, etc. In this work, we put more focus on the weights connecting the nodes in a convolutional neural network, which are naturally the fractions of a point-spread function, and take out those weighted fractions after learning to be utilized as a tuned kernel. Proof-of-concept of the kernel tuning has been demonstrated using the examples of proximity effect correction with 2-layer network, and charging effect correction with 3-layer network. This type of new tuning method can be beneficial to give researchers more insights to come up with a better model, yet it might be too early to be deployed to production to give better critical dimension (CD) and positional accuracy almost instantly.

  11. Characterization of diamond thin films deposited by a CO{sub 2} laser-assisted combustion-flame method

    Energy Technology Data Exchange (ETDEWEB)

    McKindra, Travis, E-mail: mckindra@mst.edu [Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409 (United States); O' Keefe, Matthew J. [Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409 (United States); Xie Zhiqiang; Lu Yongfeng [Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588 (United States)

    2010-06-15

    Diamond thin films were deposited by a CO{sub 2} laser-assisted O{sub 2}/C{sub 2}H{sub 2}/C{sub 2}H{sub 4} combustion-flame process. The effect of the deposition parameters, in particular the laser wavelength and power, on the film surface morphology, microstructure and phases present was the primary focus of the work. The laser power was set at 100, 400 and 800 W while the wavelength was varied and set at 10.591 {mu}m in the untuned condition and set at 10.532 {mu}m to resonantly match the CH{sub 2}-wagging vibrational mode of the C{sub 2}H{sub 4} molecule when in the tuned condition. When the laser was coupled to the combustion flame during deposition the diamond film growth was enhanced as the lateral grain size increased from 1 {mu}m to greater than 5 {mu}m. The greatest increase in grain size occurred when the wavelength was in the tuned condition. Scanning transmission electron microscopy images from focused-ion beam cross-sectioned samples revealed a sub-layer of smaller grains less than 1 {mu}m in size near the substrate surface at the lower laser powers and untuned wavelength. X-ray diffraction results showed a more intense Diamond (111) peak as the laser power increased from 100 to 800 W for the films deposited with the tuned laser wavelength. Micro-Raman spectra showed a diamond peak nearly twice as intense from the films with the tuned laser wavelength.

  12. Capacitive behavior of Ag doped V2O5 grown by aerosol assisted chemical vapour deposition

    International Nuclear Information System (INIS)

    Vernardou, D.; Marathianou, I.; Katsarakis, N.; Koudoumas, E.; Kazadojev, I.I.; O’Brien, S.; Pemble, M.E.; Povey, I.M.

    2016-01-01

    The growth of silver doped vanadium pentoxide was performed by aerosol assisted chemical vapour deposition and found to be optimal at 450° C. Additionally, an increase in crystallinity and a change in preferred orientation of V 2 O 5 was observed upon increasing the silver content. Silver incorporation also resulted in morphological changes in the thin films from rod to pellet-like structures. For higher silver content films the amount of incorporated charge increased and reversibility and repeatability was demonstrated for 500 cycles. Electrochemical impedance spectroscopy determined that the transfer and diffusion of Li+ ions through the cathode-electrolyte interface was assisted by silver loading, hence, enhancing the capacitive performance.

  13. Electrochemical impedance spectroscopy on nanostructured carbon electrodes grown by supersonic cluster beam deposition

    International Nuclear Information System (INIS)

    Bettini, Luca Giacomo; Bardizza, Giorgio; Podestà, Alessandro; Milani, Paolo; Piseri, Paolo

    2013-01-01

    Nanostructured porous films of carbon with density of about 0.5 g/cm 3 and 200 nm thickness were deposited at room temperature by supersonic cluster beam deposition (SCBD) from carbon clusters formed in the gas phase. Carbon film surface topography, determined by atomic force microscopy, reveals a surface roughness of 16 nm and a granular morphology arising from the low kinetic energy ballistic deposition regime. The material is characterized by a highly disordered carbon structure with predominant sp2 hybridization as evidenced by Raman spectroscopy. The interface properties of nanostructured carbon electrodes were investigated by cyclic voltammetry and electrochemical impedance spectroscopy employing KOH 1 M solution as aqueous electrolyte. An increase of the double layer capacitance is observed when the electrodes are heat treated in air or when a nanostructured nickel layer deposited by SCBD on top of a sputter deposited film of the same metal is employed as a current collector instead of a plain metallic film. This enhancement is consistent with an improved charge injection in the active material and is ascribed to the modification of the electrical contact at the interface between the carbon and the metal current collector. Specific capacitance values up to 120 F/g have been measured for the electrodes with nanostructured metal/carbon interface.

  14. Electrochemical impedance spectroscopy on nanostructured carbon electrodes grown by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bettini, Luca Giacomo; Bardizza, Giorgio; Podesta, Alessandro; Milani, Paolo; Piseri, Paolo, E-mail: piseri@mi.infn.it [Universita degli Studi di Milano, Dipartimento di Fisica and CIMaINa (Italy)

    2013-02-15

    Nanostructured porous films of carbon with density of about 0.5 g/cm{sup 3} and 200 nm thickness were deposited at room temperature by supersonic cluster beam deposition (SCBD) from carbon clusters formed in the gas phase. Carbon film surface topography, determined by atomic force microscopy, reveals a surface roughness of 16 nm and a granular morphology arising from the low kinetic energy ballistic deposition regime. The material is characterized by a highly disordered carbon structure with predominant sp2 hybridization as evidenced by Raman spectroscopy. The interface properties of nanostructured carbon electrodes were investigated by cyclic voltammetry and electrochemical impedance spectroscopy employing KOH 1 M solution as aqueous electrolyte. An increase of the double layer capacitance is observed when the electrodes are heat treated in air or when a nanostructured nickel layer deposited by SCBD on top of a sputter deposited film of the same metal is employed as a current collector instead of a plain metallic film. This enhancement is consistent with an improved charge injection in the active material and is ascribed to the modification of the electrical contact at the interface between the carbon and the metal current collector. Specific capacitance values up to 120 F/g have been measured for the electrodes with nanostructured metal/carbon interface.

  15. Electrochemical impedance spectroscopy on nanostructured carbon electrodes grown by supersonic cluster beam deposition

    Science.gov (United States)

    Bettini, Luca Giacomo; Bardizza, Giorgio; Podestà, Alessandro; Milani, Paolo; Piseri, Paolo

    2013-02-01

    Nanostructured porous films of carbon with density of about 0.5 g/cm3 and 200 nm thickness were deposited at room temperature by supersonic cluster beam deposition (SCBD) from carbon clusters formed in the gas phase. Carbon film surface topography, determined by atomic force microscopy, reveals a surface roughness of 16 nm and a granular morphology arising from the low kinetic energy ballistic deposition regime. The material is characterized by a highly disordered carbon structure with predominant sp2 hybridization as evidenced by Raman spectroscopy. The interface properties of nanostructured carbon electrodes were investigated by cyclic voltammetry and electrochemical impedance spectroscopy employing KOH 1 M solution as aqueous electrolyte. An increase of the double layer capacitance is observed when the electrodes are heat treated in air or when a nanostructured nickel layer deposited by SCBD on top of a sputter deposited film of the same metal is employed as a current collector instead of a plain metallic film. This enhancement is consistent with an improved charge injection in the active material and is ascribed to the modification of the electrical contact at the interface between the carbon and the metal current collector. Specific capacitance values up to 120 F/g have been measured for the electrodes with nanostructured metal/carbon interface.

  16. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam

    KAUST Repository

    Alaie, Seyedhamidreza

    2015-02-04

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties. In this work, Pt deposited by FIB is characterized thermally, structurally, and chemically. Its thermal conductivity is found to be substantially lower than the bulk value of Pt, 7.2 W m-1 K-1 versus 71.6 W m-1 K-1 at room temperature. The low thermal conductivity is attributed to the nanostructure of the material and its chemical composition. Pt deposited by FIB is shown, via aberration corrected TEM, to be a segregated mix of nanocrystalline Pt and amorphous C with Ga and O impurities. Ga impurities mainly reside in the Pt while O is homogeneously distributed throughout. The Ga impurity, small grain size of the Pt, and the amorphous carbon between grains are the cause for the low thermal conductivity of this material. Since Pt deposited by FIB is a common material for affixing samples, this information can be used to assess systematic errors in thermal characterization of different nanosamples. This application is also demonstrated by thermal characterization of two carbon nanofibers and a correction using the reported thermal properties of the Pt deposited by FIB.

  17. Fabrication of highly oriented β-FeSi2 by ion beam sputter deposition

    International Nuclear Information System (INIS)

    Nakanoya, Takamitsu; Sasase, Masato; Yamamoto, Hiroyuki; Saito, Takeru; Hojou, Kiichi

    2002-01-01

    We have prepared the 'environmentally friendly' semiconductor, β-FeSi 2 thin films by ion beam sputter deposition method. The temperature of Si (100) substrate during the deposition and total amount of deposited Fe have been changed in order to find the optimum condition of the film formation. The crystallinity and surface morphology of the formed silicides were analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. It is understood that the domain of the epitaxially grown β-FeSi 2 increases with the substrate temperature up to 700degC at the fixed amount of deposited Fe (33 nm) by XRD spectra. On the other hand, α-FeSi 2 is appeared and increased with the temperature above 700degC. Granulation of the surface is also observed by SEM images at this temperature region. At the fixed temperature condition (700degC), formation of α phase, which is obtained at the higher temperature compared with β phase, is observed for the fewer deposited samples. These results suggest the possibility of the epitaxially grown β-FeSi 2 formation at the lower (< 700degC) temperature region. (author)

  18. Computer-assisted selection of coplanar beam orientations in intensity-modulated radiation therapy

    Energy Technology Data Exchange (ETDEWEB)

    Pugachev, A.; Xing, L. [Department of Radiation Oncology, Stanford University School of Medicine, Stanford, CA (United States)]. E-mail: lei@reyes.stanford.edu

    2001-09-01

    In intensity-modulated radiation therapy (IMRT), the incident beam orientations are often determined by a trial and error search. The conventional beam's-eye view (BEV) tool becomes less helpful in IMRT because it is frequently required that beams go through organs at risk (OARs) in order to achieve a compromise between the dosimetric objectives of the planning target volume (PTV) and the OARs. In this paper, we report a beam's-eye view dosimetrics (BEVD) technique to assist in the selection of beam orientations in IMRT. In our method, each beam portal is divided into a grid of beamlets. A score function is introduced to measure the 'goodness' of each beamlet at a given gantry angle. The score is determined by the maximum PTV dose deliverable by the beamlet without exceeding the tolerance doses of the OARs and normal tissue located in the path of the beamlet. The overall score of the gantry angle is given by a sum of the scores of all beamlets. For a given patient, the score function is evaluated for each possible beam orientation. The directions with the highest scores are then selected as the candidates for beam placement. This procedure is similar to the BEV approach used in conventional radiation therapy, except that the evaluation by a human is replaced by a score function to take into account the intensity modulation. This technique allows one to select beam orientations without the excessive computing overhead of computer optimization of beam orientation. It also provides useful insight into the problem of selection of beam orientation and is especially valuable for complicated cases where the PTV is surrounded by several sensitive structures and where it is difficult to select a set of 'good' beam orientations. Several two-dimensional (2D) model cases were used to test the proposed technique. The plans obtained using the BEVD-selected beam orientations were compared with the plans obtained using equiangular spaced beams. For

  19. Properties of TiN coatings deposited by the method of condensation with ion bombardment accompanied by high-energy ion beam

    International Nuclear Information System (INIS)

    Obrezkov, O.I.; Vershok, B.A.; Dormashev, A.B.; Margulev, I.Ya.; Molchanova, S.A.; Andreev, E.S.; Dervuk, V.V.

    2002-01-01

    Vacuum-sputtering adapted commercial facility based coating of stainless steel with titanium nitride followed two procedures: ion bombardment condensation (IBC) and IBC under simultaneous effect of ion beam (IB). The deposition rate was equal to 0.1 μm min -1 ; the investigated coatings were characterized by 2.5 μm depth. Comparison analysis of features and characteristics of the specimens, as well as, full-scale tests of a coated cutting tool enabled to make conclusions about advantages of application of IB assisted IBC technology in contrast to the reference IBC technology [ru

  20. Positron deposition in plasmas by positronium beam ionization and transport of positrons in tokamak plasmas

    International Nuclear Information System (INIS)

    Murphy, T.J.

    1986-11-01

    In a recently proposed positron transport experiment, positrons would be deposited in a fusion plasma by forming a positronium (Ps) beam and passing it through the plasma. Positrons would be deposited as the beam is ionized by plasma ions and electrons. Radial transport of the positrons to the limiter could then be measured by detecting the gamma radiation produced by annihilation of positrons with electrons in the limiter. This would allow measurements of the transport of electron-mass particles and might shed some light on the mechanisms of electron transport in fusion plasmas. In this paper, the deposition and transport of positrons in a tokamak are simulated and the annihilation signal determined for several transport models. Calculations of the expected signals are necessary for the optimal design of a positron transport experiment. There are several mechanisms for the loss of positrons besides transport to the limiter. Annihilation with plasma electrons and reformation of positronium in positron-hydrogen collisions are two such processes. These processes can alter the signal and place restrictions ons on the plasma conditions in which positron transport experiments can be effectively performed

  1. Hydroxyapatite thin films grown by pulsed laser deposition and matrix assisted pulsed laser evaporation: Comparative study

    Science.gov (United States)

    Popescu-Pelin, G.; Sima, F.; Sima, L. E.; Mihailescu, C. N.; Luculescu, C.; Iordache, I.; Socol, M.; Socol, G.; Mihailescu, I. N.

    2017-10-01

    Pulsed Laser Deposition (PLD) and Matrix Assisted Pulsed Laser Evaporation (MAPLE) techniques were applied for growing hydroxyapatite (HA) thin films on titanium substrates. All experiments were conducted in a reaction chamber using a KrF* excimer laser source (λ = 248 nm, τFWHM ≈ 25 ns). Half of the samples were post-deposition thermally treated at 500 °C in a flux of water vapours in order to restore crystallinity and improve adherence. Coating surface morphologies and topographies specific to the deposition method were evidenced by scanning electron, atomic force microscopy investigations and profilometry. They were shown to depend on deposition technique and also on the post-deposition treatment. Crystalline structure of the coatings evaluated by X-ray diffraction was improved after thermal treatment. Biocompatibility of coatings, cellular adhesion, proliferation and differentiation tests were conducted using human mesenchymal stem cells (MSCs). Results showed that annealed MAPLE deposited HA coatings were supporting MSCs proliferation, while annealed PLD obtained films were stimulating osteogenic differentiation.

  2. An ultrahigh vacuum, low-energy ion-assisted deposition system for III-V semiconductor film growth

    Science.gov (United States)

    Rohde, S.; Barnett, S. A.; Choi, C.-H.

    1989-06-01

    A novel ion-assisted deposition system is described in which the substrate and growing film can be bombarded with high current densities (greater than 1 mA/sq cm) of very low energy (10-200 eV) ions. The system design philosophy is similar to that used in III-V semiconductor molecular-beam epitaxy systems: the chamber is an all-metal ultrahigh vacuum system with liquid-nitrogen-cooled shrouds, Knudsen-cell evaporation sources, a sample insertion load-lock, and a 30-kV reflection high-energy electron diffraction system. III-V semiconductor film growth is achieved using evaporated group-V fluxes and group-III elemental fluxes sputtered from high-purity targets using ions extracted from a triode glow discharge. Using an In target and an As effusion cell, InAs deposition rates R of 2 microns/h have been obtained. Epitaxial growth of InAs was observed on both GaSb(100) and Si(100) substrates.

  3. Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

    Directory of Open Access Journals (Sweden)

    Ragesh Kumar T P

    2017-11-01

    Full Text Available We present first experiments on electron beam induced deposition of silacyclohexane (SCH and dichlorosilacyclohexane (DCSCH under a focused high-energy electron beam (FEBID. We compare the deposition dynamics observed when growing pillars of high aspect ratio from these compounds and we compare the proximity effect observed for these compounds. The two precursors show similar behaviour with regards to fragmentation through dissociative ionization in the gas phase under single-collision conditions. However, while DCSCH shows appreciable cross sections with regards to dissociative electron attachment, SCH is inert with respect to this process. We discuss our deposition experiments in context of the efficiency of these different electron-induced fragmentation processes. With regards to the deposition dynamics, we observe a substantially faster growth from DCSCH and a higher saturation diameter when growing pillars with high aspect ratio. However, both compounds show similar behaviour with regards to the proximity effect. With regards to the composition of the deposits, we observe that the C/Si ratio is similar for both compounds and in both cases close to the initial molecular stoichiometry. The oxygen content in the DCSCH deposits is about double that of the SCH deposits. Only marginal chlorine is observed in the deposits of from DCSCH. We discuss these observations in context of potential approaches for Si deposition.

  4. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    International Nuclear Information System (INIS)

    Shaji, S.; Garcia, L.V.; Loredo, S.L.; Krishnan, B.

    2017-01-01

    Highlights: • Antimony sulfide thin films were prepared by normal CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • These films were photoconductive. - Abstract: Antimony sulfide (Sb_2S_3) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb_2S_3 thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV–vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb_2S_3 thin films for optoelectronic applications.

  5. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); CIIDIT—Universidad Autónoma de Nuevo León, Apodaca, Nuevo León (Mexico); Garcia, L.V. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); Loredo, S.L. [Centro de Investigación en Materiales Avanzados (CIMAV), Unidad Monterrey, PIIT, Apodaca, Nuevo León (Mexico); Krishnan, B. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); CIIDIT—Universidad Autónoma de Nuevo León, Apodaca, Nuevo León (Mexico); and others

    2017-01-30

    Highlights: • Antimony sulfide thin films were prepared by normal CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • These films were photoconductive. - Abstract: Antimony sulfide (Sb{sub 2}S{sub 3}) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb{sub 2}S{sub 3} thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV–vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb{sub 2}S{sub 3} thin films for optoelectronic applications.

  6. Low temperature metal free growth of graphene on insulating substrates by plasma assisted chemical vapor deposition

    Science.gov (United States)

    Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

    2017-03-01

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650 °C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

  7. Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Palla-Papavlu, A., E-mail: apalla@nipne.ro [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Rusen, L.; Dinca, V.; Filipescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Lippert, T. [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland); Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania)

    2014-05-01

    In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm{sup 2} the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

  8. Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

    Science.gov (United States)

    Palla-Papavlu, A.; Rusen, L.; Dinca, V.; Filipescu, M.; Lippert, T.; Dinescu, M.

    2014-05-01

    In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm2 the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

  9. Electrochemically assisted deposition of strontium modified magnesium phosphate on titanium surfaces

    International Nuclear Information System (INIS)

    Meininger, M.; Wolf-Brandstetter, C.; Zerweck, J.; Wenninger, F.; Gbureck, U.; Groll, J.; Moseke, C.

    2016-01-01

    Electrochemically assisted deposition was utilized to produce ceramic coatings on the basis of magnesium ammonium phosphate (struvite) on corundum-blasted titanium surfaces. By the addition of defined concentrations of strontium nitrate to the coating electrolyte Sr 2+ ions were successfully incorporated into the struvite matrix. By variation of deposition parameters it was possible to fabricate coatings with different kinetics of Sr 2+ into physiological media, whereas the release of therapeutically relevant strontium doses could be sustained over several weeks. Morphological and crystallographic examinations of the immersed coatings revealed that the degradation of struvite and the release of Sr 2+ ions were accompanied by a transformation of the coating to a calcium phosphate based phase similar to low-crystalline hydroxyapatite. These findings showed that strontium doped struvite coatings may provide a promising degradable coating system for the local application of strontium or other biologically active metal ions in the implant–bone interface. - Highlights: • Sr-doped struvite coatings have been deposited on titanium by electrochemically assisted deposition. • Sr content can be adjusted by means of process time, current density and pulse mode. • Sr-doped coatings release therapeutically relevant Sr doses in physiological media for several weeks. • During immersion in physiological media Sr-doped struvite coatings transform into a low crystalline calcium phosphate phase.

  10. Optimization of spray deposition and Tetranychus urticae control with air assisted and electrostatic sprayer

    Directory of Open Access Journals (Sweden)

    Denise Tourino Rezende de Cerqueira

    Full Text Available ABSTRACT: Improved spray deposition can be attained by electrostatically charging spray droplets, which increases the attraction of droplets to plants and decreases operator exposure to pesticide and losses to the environment. However, this technique alone is not sufficient to achieve desirable penetration of the spray solution into the crop canopy; thus, air assistance can be added to the electrostatic spraying to further improve spray deposition. This study was conducted to compare different spraying technologies on spray deposition and two-spotted spider mite control in cut chrysanthemum. Treatments included in the study were: conventional TJ 8003 double flat fan nozzles, conventional TXVK-3 hollow cone nozzles, semi-stationary motorized jet launched spray with electrostatic spray system (ESS and air assistance (AA, and semi-stationary motorized jet launched spray with AA only (no ESS. To evaluate the effect of these spraying technologies on the control of two-spotted spider mite, a control treatment was included that did not receive an acaricide application. The AA spraying technology, with or without ESS, optimized spray deposition and provided satisfactory two-spotted spider mite control up to 4 days after application.

  11. Electrochemically assisted deposition of strontium modified magnesium phosphate on titanium surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Meininger, M. [Department for Functional Materials in Medicine and Dentistry, University of Würzburg, Pleicherwall 2, D-97070 Würzburg (Germany); Wolf-Brandstetter, C. [Max Bergmann Center for Biomaterials, Technical University of Dresden, Budapester Straße 27, D-01069 Dresden (Germany); Zerweck, J.; Wenninger, F.; Gbureck, U.; Groll, J. [Department for Functional Materials in Medicine and Dentistry, University of Würzburg, Pleicherwall 2, D-97070 Würzburg (Germany); Moseke, C., E-mail: claus.moseke@fmz.uni-wuerzburg.de [Department for Functional Materials in Medicine and Dentistry, University of Würzburg, Pleicherwall 2, D-97070 Würzburg (Germany)

    2016-10-01

    Electrochemically assisted deposition was utilized to produce ceramic coatings on the basis of magnesium ammonium phosphate (struvite) on corundum-blasted titanium surfaces. By the addition of defined concentrations of strontium nitrate to the coating electrolyte Sr{sup 2+} ions were successfully incorporated into the struvite matrix. By variation of deposition parameters it was possible to fabricate coatings with different kinetics of Sr{sup 2+} into physiological media, whereas the release of therapeutically relevant strontium doses could be sustained over several weeks. Morphological and crystallographic examinations of the immersed coatings revealed that the degradation of struvite and the release of Sr{sup 2+} ions were accompanied by a transformation of the coating to a calcium phosphate based phase similar to low-crystalline hydroxyapatite. These findings showed that strontium doped struvite coatings may provide a promising degradable coating system for the local application of strontium or other biologically active metal ions in the implant–bone interface. - Highlights: • Sr-doped struvite coatings have been deposited on titanium by electrochemically assisted deposition. • Sr content can be adjusted by means of process time, current density and pulse mode. • Sr-doped coatings release therapeutically relevant Sr doses in physiological media for several weeks. • During immersion in physiological media Sr-doped struvite coatings transform into a low crystalline calcium phosphate phase.

  12. High temperature dielectric properties of (BxNyOz thin films deposited using ion source assisted physical vapor deposition

    Directory of Open Access Journals (Sweden)

    N. Badi

    2015-12-01

    Full Text Available The dielectric integrity has been one of the major obstacle in bringing out capacitor devices with suitable performance characteristics at high temperatures. In this paper, BxNyOz dielectric films for high temperature capacitors solutions are investigated. The films were grown on silicon substrate by using ion source assisted physical vapor deposition technique. The as-grown films were characterized by SEM, XRD, and XPS. The capacitor structures were fabricated using BxNyOz as a dielectric and titanium as metal electrodes. The elaborated devices were subjected to electrical and thermal characterization. They exhibited low electrical loss and very good stability when subjected to high temperature for a prolonged period of time.

  13. Growth Assisted by Glancing Angle Deposition: A New Technique to Fabricate Highly Porous Anisotropic Thin Films.

    Science.gov (United States)

    Sanchez-Valencia, Juan Ramon; Longtin, Remi; Rossell, Marta D; Gröning, Pierangelo

    2016-04-06

    We report a new methodology based on glancing angle deposition (GLAD) of an organic molecule in combination with perpendicular growth of a second inorganic material. The resulting thin films retain a very well-defined tilted columnar microstructure characteristic of GLAD with the inorganic material embedded inside the columns. We refer to this new methodology as growth assisted by glancing angle deposition or GAGLAD, since the material of interest (here, the inorganic) grows in the form of tilted columns, though it is deposited under a nonglancing configuration. As a "proof of concept", we have used silver and zinc oxide as the perpendicularly deposited material since they usually form ill-defined columnar microstructures at room temperature by GLAD. By means of our GAGLAD methodology, the typical tilted columnar microstructure can be developed for materials that otherwise do not form ordered structures under conventional GLAD. This simple methodology broadens significantly the range of materials where control of the microstructure can be achieved by tuning the geometrical deposition parameters. The two examples presented here, Ag/Alq3 and ZnO/Alq3, have been deposited by physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD), respectively: two different vacuum techniques that illustrate the generality of the proposed technique. The two type of hybrid samples present very interesting properties that demonstrate the potentiality of GAGLAD. On one hand, the Ag/Alq3 samples present highly optical anisotropic properties when they are analyzed with linearly polarized light. To our knowledge, these Ag/Alq3 samples present the highest angular selectivity reported in the visible range. On the other hand, ZnO/Alq3 samples are used to develop highly porous ZnO thin films by using Alq3 as sacrificial material. In this way, antireflective ZnO samples with very low refractive index and extinction coefficient have been obtained.

  14. Dynamic energy spectrum and energy deposition in solid target by intense pulsed ion beams

    Institute of Scientific and Technical Information of China (English)

    Xiao Yu; Xiao-Yun Le; Zheng Liu; Jie Shen; Yu I.Isakova; Hao-Wen Zhong; Jie Zhang; Sha Yan; Gao-Long Zhang; Xiao-Fu Zhang

    2017-01-01

    A method for analyzing the dynamic energy spectrum of intense pulsed ion beam (IPIB) was proposed.Its influence on beam energy deposition in metal target was studied with IPIB produced by two types of magnetically insulated diodes (MID).The emission of IPIB was described with space charge limitation model,and the dynamic energy spectrum was further analyzed with time-of-flight method.IPIBs generated by pulsed accelerators of BIPPAB-450 (active MID) and TEMP-4M (passive MID) were studied.The dynamic energy spectrum was used to deduce the power density distribution of IPIB in the target with Monte Carlo simulation and infrared imaging diagnostics.The effect on the distribution and evolution of thermal field induced by the characteristics of IPIB dynamic energy spectrum was discussed.

  15. Energy deposition profile for modification proposal of ISOLDE’s HRS Beam Dump, from FLUKA simulations

    CERN Document Server

    Vlachoudis, V

    2014-01-01

    The current ISOLDE HRS beam dump has been found to be unsuitable on previous simulations, due to thermomechanical stresses. In this paper a proposal for modifying HRS dump is studied using FLUKA. The energy deposited in this modified beam dump and the amount of neutrons streaming to the tunnel area are scored and compared with the simulation of current dump. Two versions of the modification have been assessed, determining which of them is more desirable in terms of influence of radiation on ISOLDE’s tunnel. Finally, a rough estimate of temperature raise in the modified dump is shown. Further conclusions on the adequacy of these modifications need to include the thermomechanical calculations’ results, based on those presented here.

  16. Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    Iqbal, M. Z.; Kumar Singh, Arun; Iqbal, M. W.; Seo, Sunae; Eom, Jonghwa

    2012-01-01

    We have grown graphene by chemical vapor deposition (CVD) and transferred it onto Si/SiO 2 substrates to make tens of micron scale devices for Raman spectroscopy study. The effect of electron beam (e-beam) irradiation of various doses (600 to 12 000 μC/cm 2 ) on CVD grown graphene has been examined by using Raman spectroscopy. It is found that the radiation exposures result in the appearance of the strong disorder D band attributed the damage to the lattice. The evolution of peak frequencies, intensities, and widths of the main Raman bands of CVD graphene is analyzed as a function of defect created by e-beam irradiation. Especially, the D and G peak evolution with increasing radiation dose follows the amorphization trajectory, which suggests transformation of graphene to the nanocrystalline and then to amorphous form. We have also estimated the strain induced by e-beam irradiation in CVD graphene. These results obtained for CVD graphene are in line with previous findings reported for the mechanically exfoliated graphene [D. Teweldebrhan and A. A. Balandin, Appl. Phys. Lett. 94, 013101 (2009)]. The results have important implications for CVD graphene characterization and device fabrication, which rely on the electron microscopy.

  17. Electron beam excitation assisted optical microscope with ultra-high resolution.

    Science.gov (United States)

    Inami, Wataru; Nakajima, Kentaro; Miyakawa, Atsuo; Kawata, Yoshimasa

    2010-06-07

    We propose electron beam excitation assisted optical microscope, and demonstrated its resolution higher than 50 nm. In the microscope, a light source in a few nanometers size is excited by focused electron beam in a luminescent film. The microscope makes it possible to observe dynamic behavior of living biological specimens in various surroundings, such as air or liquids. Scan speed of the nanometric light source is faster than that in conventional near-field scanning optical microscopes. The microscope enables to observe optical constants such as absorption, refractive index, polarization, and their dynamic behavior on a nanometric scale. The microscope opens new microscopy applications in nano-technology and nano-science.

  18. Effects of intermittent atomization on the properties of Al-doped ZnO thin films deposited by aerosol-assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Linjie; Wang, Lixin [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); Qin, Xiujuan, E-mail: qinxj@ysu.edu.cn [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); Cui, Li [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); Shao, Guangjie [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China)

    2016-04-30

    Al-doped ZnO (AZO) thin films were prepared on glass substrates with different atomization interval times by aerosol-assisted chemical vapor deposition method. The structure, morphology, and optical and electrical properties were investigated by X-ray diffractometer, atomic force microscope, UV-vis double beam spectrophotometer and 4 point probe method. ZnO thin films exhibited strong growth orientation along the (002) plane and the crystalline was affected by the atomization interval time. All the films had high transmittance and the films with interval times of 2 min and 4 min had good haze values for the transparent conducting oxide silicon solar cell applications. The AZO thin film had the best optical and electrical properties when the atomization interval time was 4 min. This is very important for the optoelectronic device applications. The surface morphology of AZO films depended on the atomization interval time. - Highlights: • Intermittent atomization is proved to be an effective measure. • Atomization interval time has an important influence on the crystallinity of films. • The surface morphology of ZnO films depends on atomization interval time. • Different hazes can be obtained by changing the atomization interval time.

  19. Effects of intermittent atomization on the properties of Al-doped ZnO thin films deposited by aerosol-assisted chemical vapor deposition

    International Nuclear Information System (INIS)

    Liu, Linjie; Wang, Lixin; Qin, Xiujuan; Cui, Li; Shao, Guangjie

    2016-01-01

    Al-doped ZnO (AZO) thin films were prepared on glass substrates with different atomization interval times by aerosol-assisted chemical vapor deposition method. The structure, morphology, and optical and electrical properties were investigated by X-ray diffractometer, atomic force microscope, UV-vis double beam spectrophotometer and 4 point probe method. ZnO thin films exhibited strong growth orientation along the (002) plane and the crystalline was affected by the atomization interval time. All the films had high transmittance and the films with interval times of 2 min and 4 min had good haze values for the transparent conducting oxide silicon solar cell applications. The AZO thin film had the best optical and electrical properties when the atomization interval time was 4 min. This is very important for the optoelectronic device applications. The surface morphology of AZO films depended on the atomization interval time. - Highlights: • Intermittent atomization is proved to be an effective measure. • Atomization interval time has an important influence on the crystallinity of films. • The surface morphology of ZnO films depends on atomization interval time. • Different hazes can be obtained by changing the atomization interval time.

  20. Effects of deposition and post-annealing conditions on electrical properties and thermal stability of TiAlN films by ion beam sputter deposition

    International Nuclear Information System (INIS)

    Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

    2006-01-01

    TiAlN films were deposited by ion beam sputter deposition (IBSD) using a Ti-Al (90/10) alloy target in a nitrogen atmosphere on thermal oxidized Si wafers. Effects of ion beam voltage, substrate temperature (T s ) and post-annealing conditions on electrical properties and oxidation resistance of TiAlN films were studied. According to the experimental results, the proper kinetic energy provided good crystallinity and a dense structure of the films. Because of their better crystallinity and predomination of (200) planes, TiAlN films deposited with 900 V at low T s (50 deg. C) have shown lower resistivity than those at high T s (250 deg. C). They also showed better oxidation resistance. If the beam voltage was too high, it caused some damage to the film surfaces, which caused poor oxidation resistance of films. When sufficient kinetic energy was provided by the beam voltage, the mobility of adatoms was too high due to their extra thermal energy, thus reducing the crystallinity and structure density of the films. A beam voltage of 900 V and a substrate temperature of 50 deg. C were the optimum deposition conditions used in this research. They provided good oxidation resistance and low electrical resistivity for IBSD TiAlN films

  1. Dose calculation methods in photon beam therapy using energy deposition kernels

    International Nuclear Information System (INIS)

    Ahnesjoe, A.

    1991-01-01

    The problem of calculating accurate dose distributions in treatment planning of megavoltage photon radiation therapy has been studied. New dose calculation algorithms using energy deposition kernels have been developed. The kernels describe the transfer of energy by secondary particles from a primary photon interaction site to its surroundings. Monte Carlo simulations of particle transport have been used for derivation of kernels for primary photon energies form 0.1 MeV to 50 MeV. The trade off between accuracy and calculational speed has been addressed by the development of two algorithms; one point oriented with low computional overhead for interactive use and one for fast and accurate calculation of dose distributions in a 3-dimensional lattice. The latter algorithm models secondary particle transport in heterogeneous tissue by scaling energy deposition kernels with the electron density of the tissue. The accuracy of the methods has been tested using full Monte Carlo simulations for different geometries, and found to be superior to conventional algorithms based on scaling of broad beam dose distributions. Methods have also been developed for characterization of clinical photon beams in entities appropriate for kernel based calculation models. By approximating the spectrum as laterally invariant, an effective spectrum and dose distribution for contaminating charge particles are derived form depth dose distributions measured in water, using analytical constraints. The spectrum is used to calculate kernels by superposition of monoenergetic kernels. The lateral energy fluence distribution is determined by deconvolving measured lateral dose distributions by a corresponding pencil beam kernel. Dose distributions for contaminating photons are described using two different methods, one for estimation of the dose outside of the collimated beam, and the other for calibration of output factors derived from kernel based dose calculations. (au)

  2. The role of electron-stimulated desorption in focused electron beam induced deposition

    DEFF Research Database (Denmark)

    van Dorp, Willem F.; Hansen, Thomas Willum; Wagner, Jakob Birkedal

    2013-01-01

    We present the results of our study about the deposition rate of focused electron beam induced processing (FEBIP) as a function of the substrate temperature with the substrate being an electron-transparent amorphous carbon membrane. When W(CO)6 is used as a precursor it is observed that the growt......, the majority desorbs from the surface rather than dissociates to contribute to the deposit. It is important to take this into account during FEBIP experiments, for instance when determining fundamental process parameters such as the activation energy for desorption....... experiments compared to literature values is consistent with earlier findings by other authors. The discrepancy is attributed to electron-stimulated desorption, which is known to occur during electron irradiation. The data suggest that, of the W(CO)6 molecules that are affected by the electron irradiation...

  3. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Podestà, Alessandro, E-mail: alessandro.podesta@mi.infn.it, E-mail: pmilani@mi.infn.it; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo, E-mail: alessandro.podesta@mi.infn.it, E-mail: pmilani@mi.infn.it [Centro Interdisciplinare Materiali e Interfacce Nanostrutturati (C.I.Ma.I.Na.), Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy)

    2015-12-21

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO{sub 2}) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.

  4. Crystal structure of TiNi nanoparticles obtained by Ar ion beam deposition

    International Nuclear Information System (INIS)

    Castro, A. Torres; Cuellar, E. Lopez; Mendez, U. Ortiz; Yacaman, M. Jose

    2008-01-01

    Nanoparticles are a state of matter that have properties different from either molecules or bulk solids, turning them into a very interesting class of materials to study. In the present work, the crystal structure of TiNi nanoparticles obtained by ion beam deposition is characterized. TiNi nanoparticles were obtained from TiNi wire samples by sputtering with Ar ions using a Gatan precision ion polishing system. The TiNi nanoparticles were deposited on a Lacey carbon film that was used for characterization by transmission electron microscopy. The nanoparticles were characterized by high-resolution transmission electron microscopy, high-angle annular dark-field imaging, electron diffraction, scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy. Results of nanodiffraction seem to indicate that the nanoparticles keep the same B2 crystal structure as the bulk material but with a decreased lattice parameter

  5. Thermoelectric Properties of Nanograined Si-Ge-Au Thin Films Grown by Molecular Beam Deposition

    Science.gov (United States)

    Nishino, Shunsuke; Ekino, Satoshi; Inukai, Manabu; Omprakash, Muthusamy; Adachi, Masahiro; Kiyama, Makoto; Yamamoto, Yoshiyuki; Takeuchi, Tsunehiro

    2018-06-01

    Conditions to achieve extremely large Seebeck coefficient and extremely small thermal conductivity in Si-Ge-Au thin films formed of nanosized grains precipitated in amorphous matrix have been investigated. We employed molecular beam deposition to prepare Si1- x Ge x Au y thin films on sapphire substrate. The deposited films were annealed under nitrogen gas atmosphere at 300°C to 500°C for 15 min to 30 min. Nanocrystals dispersed in amorphous matrix were clearly observed by transmission electron microscopy. We did not observe anomalously large Seebeck coefficient, but very low thermal conductivity of nearly 1.0 W K-1 m-1 was found at around 0.2 Si-Ge bulk material for which dimensionless figure of merit of ZT ≈ 1 was reported at high temperature.

  6. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    International Nuclear Information System (INIS)

    Podestà, Alessandro; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo

    2015-01-01

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO 2 ) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility

  7. Optical band gap of ZnO thin films deposited by electron beam evaporation

    International Nuclear Information System (INIS)

    Nadeem, M. Y.; Ali, S. L.; Wasiq, M. F.; Rana, A. M.

    2006-01-01

    Optical band gap of ZnO thin films deposited by electron beam evaporation at evaporation rates ranging 5 As/sup -1/ to 15 As /sup -1/ and thickness ranging 1000A to 3000A is presented. Deposited films were annealed at 573K for one and half hour. The variations in the optical band gap were observed and showed decreasing behavior from 3.15 eV, 3.05 eV, from 3.18 eV to 3.10 eV and from 3.19 eV to 3.18 eV for films with respective thickness 1000A, 2000 A, 3000 A on increasing the evaporation rate from 5 As/sup-1/ to As/sup -1/ by keeping thickness constant. (author)

  8. Simultaneous Power Deposition Detection of Two EC Beams with the BIS Analysis in Moving TCV Plasmas

    Science.gov (United States)

    Curchod, L.; Pochelon, A.; Decker, J.; Felici, F.; Goodman, T. P.; Moret, J.-M.; Paley, J. I.

    2009-11-01

    Modulation of power amplitude is a widespread to determine the radial absorption profile of externally launched power in fusion plasmas. There are many techniques to analyze the plasma response to such a modulation. The break-in-slope (BIS) analysis can draw an estimated power deposition profile for each power step up. In this paper, the BIS analysis is used to monitor the power deposition location of one or two EC power beams simultaneously in a non-stationary plasma being displaced vertically in the TCV tokamak vessel. Except from radial discrepancies, the results have high time resolution and compare well with simulations from the R2D2-C3PO-LUKE ray-tracing and Fokker-Planck code suite.

  9. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    Science.gov (United States)

    Podestà, Alessandro; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo

    2015-12-01

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO2) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.

  10. Importance of dewetting in organic molecular-beam deposition: Pentacene on gold

    International Nuclear Information System (INIS)

    Beernink, G.; Strunskus, T.; Witte, G.; Woell, Ch.

    2004-01-01

    Organic molecular-beam deposition of pentacene on gold substrates has been investigated using a multitechnique approach. The morphology of the organic thin films depends strongly on the substrate temperature. Pronounced dewetting and island formation are observed at room temperature. Whereas pentacene molecules adopt a planar monolayer structure, they continue to grow in an upright orientation in multilayer films as inferred from x-ray absorption spectroscopy and atomic force microscopy. These results are in pronounced contrast to a recent scanning tunneling microscopy (STM) study by Kang and Zhu [Appl. Phys. Lett. 82, 3248 (2003)] and indicate fundamental problems in the interpretation of STM measurements for organic thin films

  11. Molecular beam and pulsed laser deposition of ZnS:Cr for intermediate band solar cells

    OpenAIRE

    Nematollahi, Mohammadreza; Yang, Xiaodong; Aas, Lars Martin Sandvik; Ghadyani, Zahra; Kildemo, Morten; Gibson, Ursula; Reenaas, Turid Worren

    2015-01-01

    We have investigated the structural and optical properties of Cr-doped ZnS (ZnS:Cr) thin films (0–7.5 at.% Cr) for use in intermediate band solar cells. The films were grown on Si(100) in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) equipments. Introducing Cr into ZnS resulted in Cr related subbandgap absorption, but also reduced the grain size. The sub-bandgap absorption increased with increasing Cr content, and with increasing growth temperature, but did not depend on the ...

  12. SERS analysis of Ag nanostructures produced by ion-beam deposition

    Science.gov (United States)

    Atanasov, P. A.; Nedyalkov, N. N.; Nikov, Ru G.; Grüner, Ch; Rauschenbach, B.; Fukata, N.

    2018-03-01

    This study deals with the development of a novel technique for formation of advanced Ag nanostructures (NSs) to be applied to high-resolution analyses based on surface enhanced Raman scattering (SERS). It has direct bearing on human health and food quality, e.g., monitoring small amount or traces of pollutants or undesirable additives. Three types of nanostructured Ag samples were produced using ion-beam deposition at glancing angle (GLAD) on quartz. All fabricated structures were covered with BI-58 pesticide (dimethoate) or Rhodamine 6G (R6G) for testing their potential for use as substrates for (SERS).

  13. An apparatus for sequential pulsed plasma beam treatment in combination with Arc PVD deposition

    International Nuclear Information System (INIS)

    Stanislawski, J.; Werner, Z.; Piekoszewski, J.; Richter, E.

    2002-01-01

    A hybrid type of apparatus is described which enables one to form a thin multi-layer film on the surface of any kind of solid substrate. In one process, the surface is treated with a high intensity pulse plasma beam which introduces the chosen kind of atoms into the near-surface layer of the substrate. In the second process, following the first without breaking the vacuum, the coating is formed by arc PVD (physics vapour deposition) process. Two examples of coatings formed on metallic and ceramic substrates are presented. (author)

  14. Flexible, ionic liquid-based micro-supercapacitor produced by supersonic cluster beam deposition

    International Nuclear Information System (INIS)

    Bettini, L.G.; Piseri, P.; De Giorgio, F.; Arbizzani, C.; Milani, P.; Soavi, F.

    2015-01-01

    Highlights: • We exploited Supersonic Cluster Beam Deposition for the fabrication of a flexible, planar micro-supercapacitor featuring nanostructured carbon electrodes deposited on a plastic Mylar substrate and N-trimethyl-N-propyl-ammonium bis(trifluoromethanesulfonyl) imide (N 1113 TFSI) ionic liquid electrolyte. • The micro-supercapacitor operates at 3 V above RT up to 80 °C with a capacitance density approaching 10 F cm −3 and delivering maximum specific energy and power densities of 10 mWh cm −3 and 8-10 W cm −3 . • The micro-supercapacitor features long cycling stability over 2x10 4 cycle on flat and bent configuration. -- Graphical abstract: Display Omitted -- Abstract: Power generation and storage in electronics require flexible, thin micro-electrochemical energy storage/conversion systems. Micro-supercapacitors (μSCs) with double-layer capacitance carbon electrodes are attracting much attention for their capability of delivering short power pulses with high stability over repeated charge/discharge cycling. Supersonic Cluster Beam Deposition (SCBD) is an effective strategy for the development of nanostructured, binder-free porous carbon electrodes on temperature sensitive substrates including polymers. We exploited SCBD for the development of a flexible, planar μSC featuring nanostructured carbon (ns-C) electrodes deposited on a plastic Mylar substrate and N-trimethyl-N-propyl-ammonium bis(trifluoromethanesulfonyl) imide (N 1113 TFSI) ionic liquid electrolyte. The electrochemical performance at different temperatures of the μSC which operates at 3 V above RT up to 80 °C with a capacitance density approaching 10 F cm −3 and delivering maximum specific energy and power densities of 10 mWh cm −3 and 8-10 W cm −3 with long cycling stability over 2 × 10 4 cycles is here reported and discussed

  15. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    KAUST Repository

    Batra, Nitin M; Patole, Shashikant P.; Abdelkader, Ahmed; Anjum, Dalaver H.; Deepak, Francis L; Da Costa, Pedro M. F. J.

    2015-01-01

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode–interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode–nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  16. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    KAUST Repository

    Batra, Nitin M

    2015-10-09

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode–interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode–nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  17. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices.

    Science.gov (United States)

    Batra, Nitin M; Patole, Shashikant P; Abdelkader, Ahmed; Anjum, Dalaver H; Deepak, Francis L; Costa, Pedro M F J

    2015-11-06

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode-interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode-nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  18. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M.; Lin, Y.P.; Schmidt, H.; Liu, Y.L.; Barr, T.; Chang, R.P.H.

    1992-01-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described

  19. Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

    International Nuclear Information System (INIS)

    Auciello, O.; Ameen, M.S.; Kingon, A.I.

    1989-01-01

    Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr + or Xe + ions is preferable to the most commonly used Ar + ions, since the undesirable phenomena mentioned above are minimized for the first two ions. These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs

  20. Photon-assisted Beam Probes for Low Temperature Plasmas and Installation of Neutral Beam Probe in Helimak

    Science.gov (United States)

    Garcia de Gorordo, Alvaro; Hallock, Gary A.; Kandadai, Nirmala

    2008-11-01

    The Heavy Ion Beam Probe (HIBP) diagnostic has successfully measured the electric potential in a number of major plasma devices in the fusion community. In contrast to a Langmuir probe, the HIBP measures the exact electric potential rather than the floating potential. It is also has the advantage of being a very nonperturbing diagnostic. We propose a new photon-assisted beam probe technique that would extend the HIBP type of diagnostics into the low temperature plasma regime. We expect this method to probe plasmas colder than 10 eV. The novelty of the proposed diagnostic is a VUV laser that ionizes the probing particle. Excimer lasers produce the pulsed VUV radiation needed. The lasers on the market don't have a short enough wavelength too ionize any ion directly and so we calculate the population density of excited states in a NLTE plasma. These new photo-ionization techniques can take an instantaneous one-dimensional potential measurement of a plasma and are ideal for nonmagnitized plasmas where continuous time resolution is not required. Also the status of the Neutral Beam Probe installation on the Helimak experiment will be presented.

  1. Ion-substituted calcium phosphate coatings deposited by plasma-assisted techniques: A review.

    Science.gov (United States)

    Graziani, Gabriela; Bianchi, Michele; Sassoni, Enrico; Russo, Alessandro; Marcacci, Maurilio

    2017-05-01

    One of the main critical aspects behind the failure or success of an implant resides in its ability to fast bond with the surrounding bone. To boost osseointegration, the ideal implant material should exhibit composition and structure similar to those of biological apatite. To this aim, the most common approach is to coat the implant surface with a coating of hydroxyapatite (HA), resembling the main component of mineralized tissues. However, bone apatite is a non-stoichiometric, multi-substituted poorly-crystalline apatite, containing significant amounts of foreign ions, with high biological relevance. Ion-substituted HAs can be deposited by so called "wet methods", which are however poorly reproducible and hardly industrially feasible; at the same time bioactive coatings realized by plasma assisted method, interesting for industrial applications, are generally made of stoichiometric (i.e. un-substituted) HA. In this work, the literature concerning plasma-assisted deposition methods used to deposit ion-substituted HA was reviewed and the last advances in this field discussed. The ions taken into exam are those present in mineralized tissues and possibly having biological relevance. Notably, literature about this topic is scarce, especially relating to in vivo animal and clinical trials; further on, available studies evaluate the performance of substituted coatings from different points of view (mechanical properties, bone growth, coating dissolution, etc.) which hinders a proper evaluation of the real efficacy of ion-doped HA in promoting bone regeneration, compared to stoichiometric HA. Moreover, results obtained for plasma sprayed coatings (which is the only method currently employed for deposition at the industrial scale) were collected and compared to those of novel plasma-assisted techniques, that are expected to overcome its limitations. Data so far available on the topic were discussed to highlight advantages, limitations and possible perspectives of these

  2. Deposition of Methylammonium Lead Triiodide by Resonant Infrared Matrix-Assisted Pulsed Laser Evaporation

    Science.gov (United States)

    Barraza, E. Tomas; Dunlap-Shohl, Wiley A.; Mitzi, David B.; Stiff-Roberts, Adrienne D.

    2018-02-01

    Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) was used to deposit the metal-halide perovskite (MHP) CH3NH3PbI3 (methylammonium lead triiodide, or MAPbI), creating phase-pure films. Given the moisture sensitivity of these crystalline, multi-component organic-inorganic hybrid materials, deposition of MAPbI by RIR-MAPLE required a departure from the use of water-based emulsions as deposition targets. Different chemistries were explored to create targets that properly dissolved MAPbI components, were stable under vacuum conditions, and enabled resonant laser energy absorption. Secondary phases and solvent contamination in the resulting films were studied through Fourier transform infrared (FTIR) absorbance and x-ray diffraction (XRD) measurements, suggesting that lingering excess methylammonium iodide (MAI) and low-vapor pressure solvents can distort the microstructure, creating crystalline and amorphous non-perovskite phases. Thermal annealing of films deposited by RIR-MAPLE allowed for excess solvent to be evaporated from films without degrading the MAPbI structure. Further, it was demonstrated that RIR-MAPLE does not require excess MAI to create stoichiometric films with optoelectronic properties, crystal structure, and film morphology comparable to films created using more established spin-coating methods for processing MHPs. This work marks the first time a MAPLE-related technique was used to deposit MHPs.

  3. Application of Chlorine-Assisted Chemical Vapor Deposition of Diamond at Low Temperatures

    Science.gov (United States)

    Pan, Chenyu; Altemir, David A.; Margrave, John L.; Hauge, Robert H.

    1994-01-01

    Low temperature deposition of diamond has been achieved by a chlorine-assisted diamond chemical vapor deposition (CA-CVD) process. This method begins with the thermal dissociation of molecular chlorine into atomic chlorine in a resistively heated graphite furnace at temperatures between 1300 and 1500 deg. C. The atomic chlorine, upon mixing, subsequently reacts with molecular hydrogen and hydrocarbons. The rapid exchange reactions between the atomic chlorine, molecular hydrogen, and hydrocarbons give rise to the atomic hydrogen and carbon precursors required for diamond deposition. Homoepitaxial diamond growth on diamond substrates has been studied over the substrate temperature range of 100-950 C. It was found that the diamond growth rates are approximately 0.2 microns/hr in the temperature range between 102 and 300 C and that the growth rates do not decrease significantly with a decrease in substrate temperature. This is unique because the traditional diamond deposition using H2/CH4 systems usually disappears at substrate temperatures below approx. 500 deg. C. This opens up a possible route to the deposition of diamond on low-melting point materials such as aluminum and its alloys.

  4. Synthesis and in vacuo deposition of iron oxide nanoparticles by microplasma-assisted decomposition of ferrocene

    International Nuclear Information System (INIS)

    Schaefer, Michael; Kumar, Ajay; Mohan Sankaran, R.; Schlaf, Rudy

    2014-01-01

    Microplasma-assisted gas-phase nucleation has emerged as an important new approach to produce high-purity, nanometer-sized, and narrowly dispersed particles. This study aims to integrate this technique with vacuum conditions to enable synthesis and deposition in an ultrahigh vacuum compatible environment. The ultimate goal is to combine nanoparticle synthesis with photoemission spectroscopy-based electronic structure analysis. Such measurements require in vacuo deposition to prevent surface contamination from sample transfer, which can be deleterious for nanoscale materials. A homebuilt microplasma reactor was integrated into an existing atomic layer deposition system attached to a surface science multi-chamber system equipped with photoemission spectroscopy. As proof-of-concept, we studied the decomposition of ferrocene vapor in the microplasma to synthesize iron oxide nanoparticles. The injection parameters were optimized to achieve complete precursor decomposition under vacuum conditions, and nanoparticles were successfully deposited. The stoichiometry of the deposited samples was characterized in situ using X-ray photoelectron spectroscopy indicating that iron oxide was formed. Additional transmission electron spectroscopy characterization allowed the determination of the size, shape, and crystal lattice of the particles, confirming their structural properties.

  5. Reduction of thermal expansion in Z-pinches by electron beam assisted magnetic field generation

    International Nuclear Information System (INIS)

    Heikkinen, J.A.; Karttunen, S.J.

    1989-01-01

    Weak radial expansion of a Z-pinch plasma column during its strong initial ohmic heating phase is expected when the generation of a confining magnetic field is assisted by a correctly formed electron beam pulse. Appropriate one-dimensional magnetohydrodynamic equations are numerically solved, and the observed increase of plasma radius as a function of time for various discharge parameters is compared to a normal Z-pinch discharge initiation. (author)

  6. Dense CdS thin films on fluorine-doped tin oxide coated glass by high-rate microreactor-assisted solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Su, Yu-Wei, E-mail: suyuweiwayne@gmail.com [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ramprasad, Sudhir [Energy Processes and Materials Division, Pacific Northwest National Laboratory, Corvallis, OR 9730 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Han, Seung-Yeol; Wang, Wei [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ryu, Si-Ok [School of Display and Chemical Engineering, Yeungnam University, 214-1 Dae-dong, Gyeonsan, Gyeongbuk 712-749 (Korea, Republic of); Palo, Daniel R. [Barr Engineering Co., Hibbing, MN 55747 (United States); Paul, Brian K. [School of Mechanical, Industrial and Manufacturing Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Chang, Chih-hung [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States)

    2013-04-01

    Continuous microreactor-assisted solution deposition is demonstrated for the deposition of CdS thin films on fluorine-doped tin oxide (FTO) coated glass. The continuous flow system consists of a microscale T-junction micromixer with the co-axial water circulation heat exchanger to control the reacting chemical flux and optimize the heterogeneous surface reaction. Dense, high quality nanocrystallite CdS thin films were deposited at an average rate of 25.2 nm/min, which is significantly higher than the reported growth rate from typical batch chemical bath deposition process. Focused-ion-beam was used for transmission electron microscopy specimen preparation to characterize the interfacial microstructure of CdS and FTO layers. The band gap was determined at 2.44 eV by UV–vis absorption spectroscopy. X-ray photon spectroscopy shows the binding energies of Cd 3d{sub 3/2}, Cd 3d{sub 5/2}, S 2P{sub 3/2} and S 2P{sub 1/2} at 411.7 eV, 404.8 eV, 162.1 eV and 163.4 eV, respectively. - Highlights: ► CdS films deposited using continuous microreactor-assisted solution deposition (MASD) ► Dense nanocrystallite CdS films can be reached at a rate of 25.2 [nm/min]. ► MASD can approach higher film growth rate than conventional chemical bath deposition.

  7. Effect of annealing on the structural properties of electron beam deposited CIGS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Venkatachalam, M. [Department of Electronics, Erode Arts College, Erode (India)], E-mail: prabhu7737@yahoo.com; Kannan, M.D.; Jayakumar, S.; Balasundaraprabhu, R. [Thin Film Center, PSG College of Technology, Coimbatore (India); Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology, Coimbatore (India)

    2008-08-30

    CIGS bulk compound of three different compositions CuIn{sub 0.85}Ga{sub 0.15}Se{sub 2}, CuIn{sub 0.80}Ga{sub 0.20}Se{sub 2} and CuIn{sub 0.75}Ga{sub 0.25}Se{sub 2} have been prepared by direct reaction of elemental copper, indium, gallium and selenium. CIGS thin films of the three compositions have been deposited onto glass and silicon substrates using the prepared bulk by electron beam deposition method. The structural properties of the deposited films have been studied using X-ray diffraction technique. The as-deposited CIGS films have been found to be amorphous in nature. To study the effect of annealing on the structural properties, the films have been annealed in vacuum of the order of 10{sup -5} Torr. The X-ray diffractograms of the annealed CIGS films exhibited peaks revealing that the annealed films are crystalline in nature with tetragonal chalcopyrite structure. The (112) peak corresponding to the chalcopyrite structure has been observed to be the dominating peak in all the annealed films. The position of the (112) peak and other peaks in the X-ray diffraction pattern has been observed to shift to higher values of 2{theta} with the increase of gallium concentration. The lattice parameter values 'a' and 'c' have been calculated and they are found to be dependent on the concentration of gallium in the films. The FWHM in the X-ray diffraction pattern is found to decrease with an increase in annealing temperature indicating that the crystalline nature of the CIGS improves with increase in annealing temperature. The films grown on silicon substrates have been found to be of better crystalline quality than those deposited on glass substrates. The micro structural parameters like grain size, dislocation density and strain have been evaluated. The chemical constituents present in the deposited CIGS films have been identified using energy dispersive X-ray analysis. The surface topographical study on the films has been performed by AFM. The

  8. Model of depositing layer on cylindrical surface produced by induction-assisted laser cladding process

    Directory of Open Access Journals (Sweden)

    Kotlan Václav

    2017-12-01

    Full Text Available A model of hybrid cladding on a cylindrical surface is built and numerically solved. Heating of both substrate and the powder material to be deposited on its surface is realized by laser beam and preheating inductor. The task represents a hard-coupled electromagnetic-thermal problem with time-varying geometry. Two specific algorithms are developed to incorporate this effect into the model, driven by local distribution of temperature and its gradients. The algorithms are implemented into the COMSOL Multiphysics 5.2 code that is used for numerical computations of the task. The methodology is illustrated with a typical example whose results are discussed.

  9. Observation of strong leakage reduction in crystal assisted collimation of the SPS beam

    Energy Technology Data Exchange (ETDEWEB)

    Scandale, W. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Laboratoire de l' Accelerateur Lineaire (LAL), Universite Paris Sud Orsay, Orsay (France); INFN Sezione di Roma, Piazzale Aldo Moro 2, 00185 Rome (Italy); Arduini, G.; Butcher, M.; Cerutti, F.; Garattini, M.; Gilardoni, S.; Lechner, A.; Losito, R.; Masi, A.; Mereghetti, A.; Metral, E. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Mirarchi, D. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Imperial College, London (United Kingdom); Montesano, S.; Redaelli, S. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Rossi, R. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); INFN Sezione di Roma, Piazzale Aldo Moro 2, 00185 Rome (Italy); Schoofs, P.; Smirnov, G. [CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland); Bagli, E.; Bandiera, L.; Baricordi, S. [INFN Sezione di Ferrara, Dipartimento di Fisica, Università di Ferrara, Ferrara (Italy); and others

    2015-09-02

    In ideal two-stage collimation systems, the secondary collimator–absorber should have its length sufficient to exclude practically the exit of halo particles with large impact parameters. In the UA9 experiments on the crystal assisted collimation of the SPS beam a 60 cm long tungsten bar is used as a secondary collimator–absorber which is insufficient for the full absorption of the halo protons. Multi-turn simulation studies of the collimation allowed to select the position for the beam loss monitor downstream the collimation area where the contribution of particles deflected by the crystal in channeling regime but emerging from the secondary collimator–absorber is considerably reduced. This allowed observation of a strong leakage reduction of halo protons from the SPS beam collimation area, thereby approaching the case with an ideal absorber.

  10. Electrical characterization of defects introduced in n-Si during electron beam deposition of Pt

    Energy Technology Data Exchange (ETDEWEB)

    Auret, F.D.; Coelho, S.M.M.; Nel, J.M.; Meyer, W.E. [Physics Department, University of Pretoria, Pretoria (South Africa)

    2012-10-15

    We have used deep level transient spectroscopy (DLTS) and high resolution DLTS to characterize the defects introduced in epitaxially grown n-type, P-doped, Si during electron beam deposition (EBD) of Pt for Schottky contact formation. The identity of some of these defects could be established by comparing their properties to those of well-known defects introduced by high energy electron irradiation of the same material. The most prominent EBD-induced defects thus identified were the E-center (VP center), the A-center (VO center), interstitial carbon (C{sub i}), and the interstitial carbon-substitutional carbon (C{sub i}C{sub s}) pair. EBD also introduced some defects that were not observed after high energy electron irradiation. DLTS depth profiling revealed that the main defects, VO and VP, could be detected up to 0.5 {mu}m below the metal-Si interface. Shielding the sample from particles originating in the region of the electron beam significantly reduced defect introduction and resulted in Schottky contacts with improved rectification properties. Finally, we have found that exposing the sample to EBD conditions, without actually depositing metal, introduced a different set of electron traps, not introduced by the EBD process. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Atomic layer deposition of HfO{sub 2} on graphene through controlled ion beam treatment

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki Seok [School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419 (Korea, Republic of); Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun [School of Electrical and Electronics Engineering, Yonsei University, 50 Yonsei Ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Yeom, Geun Young, E-mail: knam1004@dju.kr, E-mail: gyyeom@skku.edu [School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419 (Korea, Republic of); SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419 (Korea, Republic of); Kim, Kyong Nam, E-mail: knam1004@dju.kr, E-mail: gyyeom@skku.edu [School of Advanced Materials Science and Engineering, Daejeon University, Yongun-dong, Dong-gu, Daejeon 34520 (Korea, Republic of)

    2016-05-23

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar{sup +} ion beam, we cleaned the polymer residue without damaging the graphene network. HfO{sub 2} grown by atomic layer deposition on graphene cleaned using an Ar{sup +} ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar{sup +} ion cleaning) showed a non-uniform structure. A graphene–HfO{sub 2}–metal capacitor fabricated by growing 20-nm thick HfO{sub 2} on graphene exhibited a very low leakage current (<10{sup −11} A/cm{sup 2}) for Ar{sup +} ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  12. Smooth silk fibroin nanofilm deposited by 1064-nm pulsed laser beam from an opaque target

    International Nuclear Information System (INIS)

    Nozaki, R.; Nakayama, S.; Senna, M.

    2013-01-01

    In an attempt to prepare smooth nanostructured thin films of silk fibroin (SF) by near-infrared (NIR) pulsed laser deposition, an opaque target was prepared from an emulsified aqueous solution of SF. Upon irradiation of 1064-nm pulsed laser beam at its fluence 5 J/cm 2 , a thin film of SF was deposited on the Si(100) substrate with its root-mean-square surface roughness, 0.37 nm, smoother than those obtained from a compressed target of SF powders by approximately an order of magnitude. The attainment of an extra-smooth film from the opaque target was discussed in terms of multiple Mie scattering of the incident NIR beam, leading to an increase in the plasma density, intensified optical breakdown, ablation of better dispersed SF molecular units, and a film with more intensive intermolecular cross-linking. - Highlights: • Thin film of silk fibroin with its RMS surface roughness, R rms , 0.37 nm was obtained. • The use of a target from an emulsified solution of SF was the key issue. • Mechanism involved was elucidated in terms of enhanced Mie scattering

  13. Ion beam deposition of DLC and nitrogen doped DLC thin films for enhanced haemocompatibility on PTFE

    International Nuclear Information System (INIS)

    Srinivasan, S.; Tang, Y.; Li, Y.S.; Yang, Q.; Hirose, A.

    2012-01-01

    Diamond-like carbon (DLC) and N-doped DLC (DLC:N) thin films have been synthesized on polytetrafluroethylene (PTFE) and silicon wafers using ion beam deposition. Raman spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy and scanning electron microscopy were used to study the structural and morphological properties of the coated surface. The results show that the ion beam deposited DLC thin films exhibit high hardness and Young's modulus, low coefficient of friction and high adhesion to the substrate. Low concentration of nitrogen doping in DLC improves the mechanical properties and reduces the surface roughness. DLC coating decreases the surface energy and improves the wettability of PTFE. The platelet adhesion results show that the haemocompatibility of DLC coated PTFE, especially DLC:N coated PTFE, has been significantly enhanced as compared with uncoated PTFE. SEM observations show that the platelet reaction on the DLC and DLC:N coated PTFE was minimized as the platelets were much less aggregated and activated.

  14. Growth of group III nitride films by pulsed electron beam deposition

    International Nuclear Information System (INIS)

    Ohta, J.; Sakurada, K.; Shih, F.-Y.; Kobayashi, A.; Fujioka, H.

    2009-01-01

    We have grown group III nitride films on Al 2 O 3 (0 0 0 1), 6H-SiC (0 0 0 1), and ZnO (0001-bar) substrates by pulsed electron beam deposition (PED) for the first time and investigated their characteristics. We found that c-plane AlN and GaN grow epitaxially on these substrates. It has been revealed that the growth of GaN on atomically flat 6H-SiC substrates starts with the three-dimensional mode and eventually changes into the two-dimensional mode. The GaN films exhibited strong near-band-edge emission in their room temperature photoluminescence spectra. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C. - Graphical abstract: We have grown group III nitride films by pulsed electron beam deposition (PED) and found that the films of group III nitrides grow epitaxially on 6H-SiC and Al 2 O 3 substrates. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C.

  15. Cluster ion beam facilities

    International Nuclear Information System (INIS)

    Popok, V.N.; Prasalovich, S.V.; Odzhaev, V.B.; Campbell, E.E.B.

    2001-01-01

    A brief state-of-the-art review in the field of cluster-surface interactions is presented. Ionised cluster beams could become a powerful and versatile tool for the modification and processing of surfaces as an alternative to ion implantation and ion assisted deposition. The main effects of cluster-surface collisions and possible applications of cluster ion beams are discussed. The outlooks of the Cluster Implantation and Deposition Apparatus (CIDA) being developed in Guteborg University are shown

  16. Environmental sensing with optical fiber sensors processed with focused ion beam and atomic layer deposition

    Science.gov (United States)

    Flores, Raquel; Janeiro, Ricardo; Dahlem, Marcus; Viegas, Jaime

    2015-03-01

    We report an optical fiber chemical sensor based on a focused ion beam processed optical fiber. The demonstrated sensor is based on a cavity formed onto a standard 1550 nm single-mode fiber by either chemical etching, focused ion beam milling (FIB) or femtosecond laser ablation, on which side channels are drilled by either ion beam milling or femtosecond laser irradiation. The encapsulation of the cavity is achieved by optimized fusion splicing onto a standard single or multimode fiber. The empty cavity can be used as semi-curved Fabry-Pérot resonator for gas or liquid sensing. Increased reflectivity of the formed cavity mirrors can be achieved with atomic layer deposition (ALD) of alternating metal oxides. For chemical selective optical sensors, we demonstrate the same FIB-formed cavity concept, but filled with different materials, such as polydimethylsiloxane (PDMS), poly(methyl methacrylate) (PMMA) which show selective swelling when immersed in different solvents. Finally, a reducing agent sensor based on a FIB formed cavity partially sealed by fusion splicing and coated with a thin ZnO layer by ALD is presented and the results discussed. Sensor interrogation is achieved with spectral or multi-channel intensity measurements.

  17. Graphene crystal growth by thermal precipitation of focused ion beam induced deposition of carbon precursor via patterned-iron thin layers

    Directory of Open Access Journals (Sweden)

    Rius Gemma

    2014-01-01

    Full Text Available Recently, relevant advances on graphene as a building block of integrated circuits (ICs have been demonstrated. Graphene growth and device fabrication related processing has been steadily and intensively powered due to commercial interest; however, there are many challenges associated with the incorporation of graphene into commercial applications which includes challenges associated with the synthesis of this material. Specifically, the controlled deposition of single layer large single crystal graphene on arbitrary supports, is particularly challenging. Previously, we have reported the first demonstration of the transformation of focused ion beam induced deposition of carbon (FIBID-C into patterned graphitic layers by metal-assisted thermal treatment (Ni foils. In this present work, we continue exploiting the FIBID-C approach as a route for graphene deposition. Here, thin patterned Fe layers are used for the catalysis of graphenization and graphitization. We demonstrate the formation of high quality single and few layer graphene, which evidences, the possibility of using Fe as a catalyst for graphene deposition. The mechanism is understood as the minute precipitation of atomic carbon after supersaturation of some iron carbides formed under a high temperature treatment. As a consequence of the complete wetting of FIBID-C and patterned Fe layers, which enable graphene growth, the as-deposited patterns do not preserve their original shape after the thermal treatment

  18. Molecular dynamics and experimental studies on deposition mechanisms of ion beam sputtering

    International Nuclear Information System (INIS)

    Fang, T.-H.; Chang, W.-J.; Lin, C.-M.; Lien, W.-C.

    2008-01-01

    Molecular dynamics (MD) simulation and experimental methods are used to study the deposition mechanism of ionic beam sputtering (IBS), including the effects of incident energy, incident angle and deposition temperature on the growth process of nickel nanofilms. According to the simulation, the results showed that increasing the temperature of substrate decreases the surface roughness, average grain size and density. Increasing the incident angle increases the surface roughness and the average grain size of thin film, while decreasing its density. In addition, increasing the incident energy decreases the surface roughness and the average grain size of thin film, while increasing its density. For the cases of simulation, with the substrate temperature of 500 K, normal incident angle and 14.6 x 10 -17 J are appropriate, in order to obtain a smoother surface, a small grain size and a higher density of thin film. From the experimental results, the surface roughness of thin film deposited on the substrates of Si(1 0 0) and indium tin oxide (ITO) decreases with the increasing sputtering power, while the thickness of thin film shows an approximately linear increase with the increase of sputtering power

  19. Microstructure and surface morphology of YSZ thin films deposited by e-beam technique

    International Nuclear Information System (INIS)

    Laukaitis, G.; Dudonis, J.; Milcius, D.

    2008-01-01

    In present study yttrium-stabilized zirconia (YSZ) thin films were deposited on optical quartz (amorphous SiO 2 ), porous Ni-YSZ and crystalline Alloy 600 (Fe-Ni-Cr) substrates using e-beam deposition technique and controlling technological parameters: substrate temperature and electron gun power which influence thin-film deposition mechanism. X-ray diffraction, scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to investigate how thin-film structure and surface morphology depend on these parameters. It was found that the crystallite size, roughness and growth mechanism of YSZ thin films are influenced by electron gun power. To clarify the experimental results, YSZ thin-film formation as well evolution of surface roughness at its initial growing stages were analyzed. The evolution of surface roughness could be explained by the processes of surface mobility of adatoms and coalescence of islands. The analysis of these experimental results explain that surface roughness dependence on substrate temperature and electron gun power non-monotonous which could result from diffusivity of adatoms and the amount of atomic clusters in the gas stream of evaporated material

  20. Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

    International Nuclear Information System (INIS)

    Li Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

    2013-01-01

    Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al 2 O 3 , ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and α-Al 2 O 3 crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

  1. Power deposition by neutral beam injected fast ions in field-reversed configurations

    International Nuclear Information System (INIS)

    Takahashi, Toshiki; Kato, Takayuki; Kondoh, Yoshiomi; Iwasaka, Naotaka

    2004-04-01

    Effects of Coulomb collisions on neutral beam (NB) injected fast ions into Field-Reversed Configuration (FRC) plasmas are investigated by calculating the single particle orbits, where the ions are subject to the slowing down and pitch angle collisions. The Monte-Carlo method is used for the pitch angle scattering, and the friction term is added to the equation of motion to show effects of slowing down collision such as the deposited power profile. Calculation parameters used are relevant to the NB injection on the FRC Injection Experiment (FIX) device. It is found that the dominant local power deposition occurs in the open field region between the X-point and the mirror point because of a concentration of fast ions and a longer duration travel at the mirror reflection point. In the present calculation, the maximum deposited power to the FRC plasma is about 10% of the injected power. Although the pitch angle scattering by Coulomb collision destroys the mirror confinement of NB injected fast ions, this effect is found negligible. The loss mechanism due to non-adiabatic fast ion motion, which is intrinsic in non-uniform FRC plasmas, affects much greater than the pitch angle scattering by Coulomb collision. (author)

  2. Power deposition by neutral beam injected fast ions in field-reversed configurations

    International Nuclear Information System (INIS)

    Takahashi, Toshiki; Kato, Takayuki; Kondoh, Yoshiomi; Iwasawa, Naotaka

    2004-01-01

    The effects of Coulomb collisions on neutral beam (NB) injected fast ions into field-reversed configuration (FRC) plasmas are investigated by calculating the single particle orbits, where the ions are subject to the slowing-down and pitch-angle collisions. The Monte Carlo method is used for the pitch-angle scattering, and the friction term is added to the equation of motion to show the effects of the slowing-down collision, such as the deposited power profile. The calculation parameters used are relevant to the NB injection on the FRC injection experiment device [T. Asai, Y. Suzuki, T. Yoneda, F. Kodera, M. Okubo, and S. Goto, Phys. Plasmas 7, 2294 (2000)]. It is found that the dominant local power deposition occurs in the open field region between the X point and the mirror point because of a concentration of fast ions and a longer duration travel at the mirror reflection point. In the present calculation, the maximum deposited power to the FRC plasma is about 10% of the injected power. Although the pitch-angle scattering by Coulomb collision destroys the mirror confinement of NB injected fast ions, this effect is found to be negligible. The loss mechanism due to nonadiabatic fast ion motion, which is intrinsic in nonuniform FRC plasmas, has a much greater effect than the pitch-angle scattering by Coulomb collision

  3. Functionalized porphyrin conjugate thin films deposited by matrix assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Iordache, S. [University of Bucharest, 3Nano-SAE Research Center, PO Box MG-38, Bucharest-Magurele (Romania); Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Popescu, A.C.; Popescu, C.E.; Dorcioman, G.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Ciucu, A.A. [University of Bucharest, Faculty of Chemistry, Bucharest (Romania); Balan, A.; Stamatin, I. [University of Bucharest, 3Nano-SAE Research Center, PO Box MG-38, Bucharest-Magurele (Romania); Fagadar-Cosma, E. [Institute of Chemistry Timisoara of Romanian Academy, M. Viteazul Ave. 24, 300223-Timisoara (Romania); Chrisey, D.B. [Tulane University, Departments of Physics and Biomedical Engineering, New Orleans, LA 70118 (United States)

    2013-08-01

    We report on the deposition of nanostructured porphyrin-base, 5(4-carboxyphenyl)-10,15,20-tris(4-phenoxyphenyl)-porphyrin thin films by matrix assisted pulsed laser evaporation onto silicon substrates with screen-printed electrodes. AFM investigations have shown that at 400 mJ/cm{sup 2} fluence a topographical transition takes place from the platelet-like stacking porphyrin-based nanostructures in a perpendicular arrangement to a quasi-parallel one both relative to the substrate surface. Raman spectroscopy has shown that the chemical structure of the deposited thin films is preserved for fluences within the range of 200–300 mJ/cm{sup 2}. Cyclic voltammograms have demonstrated that the free porphyrin is appropriate as a single mediator for glucose in a specific case of screen-printed electrodes, suggesting potential for designing a new class of biosensors.

  4. Progress on channel spark development and application of pulsed electron beam deposition (PED) in the field of medical coating work

    International Nuclear Information System (INIS)

    Schultheiss, Christoph; Buth, Lothar-H.-O.; Frey, Wolfgang; Bluhm, Hansjoachim; Mayer, Hanns-G.

    2002-01-01

    A promising source for Pulsed Electron Beam Deposition (PED) is the channel spark. Recent improvements helped to reduce beam instabilities which up to now have limited the life time of the system. The beam power could be increased and because of better beam quality the transport length of the beam is increased from 1 to several centimeters (up to 10 cm). Together with other improvements on the triggering system and beam transport in dielectric tubes, the channel spark approaches industrial standards. An overview of actual applications in research and industry will be presented. An attractive feature of the pulsed electron beam thin film deposition is the conservation of stoichiometry even during deposition of multi-component earth-alkali and alkali glasses. Specially developed glasses like BIOGLAS registered have the ability to anchor soft living tissue at the surface. In form of a bulk material bio active glasses are brittle limiting its applications. Contrary to brittle bulk material a thin layers on medical implants exhibits reliable bio-functionality. Coating of implants with this category of materials is subject of the European INCOMED project (Innovative Coating of Medical Implants with Soft Tissue Anchoring Ability) which just has started

  5. One-dimensional analysis of the rate of plasma-assisted sputter deposition

    International Nuclear Information System (INIS)

    Palmero, A.; Rudolph, H.; Habraken, F. H. P. M.

    2007-01-01

    In this article a recently developed model [A. Palmero, H. Rudolph, and F. H. P. M. Habraken, Appl. Phys. Lett. 89, 211501 (2006)] is applied to analyze the transport of sputtered material from the cathode toward the growing film when using a plasma-assisted sputtering deposition technique. The argon pressure dependence of the deposition rate of aluminum, silicon, vanadium, chromium, germanium, tantalum, and tungsten under several different experimental conditions has been analyzed by fitting experimental results from the literature to the above-mentioned theory. Good fits are obtained. Three quantities are deduced from the fit: the temperature of the cathode and of the growing film, and the value of the effective cross section for thermalization due to elastic scattering of a sputtered particle on background gas atoms. The values derived from the fits for the growing film and cathode temperature are very similar to those experimentally determined and reported in the literature. The effective cross sections have been found to be approximately the corresponding geometrical cross section divided by the average number of collisions required for the thermalization, implying that the real and effective thermalization lengths have a similar value. Finally, the values of the throw distance appearing in the Keller-Simmons model, as well as its dependence on the deposition conditions have been understood invoking the values of the cathode and film temperature, as well as of the value of the effective cross section. The analysis shows the overall validity of this model for the transport of sputtered particles in sputter deposition

  6. Deposition of Ni-CGO composite anodes by electrostatic assisted ultrasonic spray pyrolysis method

    International Nuclear Information System (INIS)

    Chen, J.-C.; Chang, C.-L.; Hsu, C.-S.; Hwang, B.-H.

    2007-01-01

    Deposition of composite films of Ni and Gd-doped ceria was carried out using the electrostatic assisted ultrasonic spray pyrolysis method for the first time. The composite films were highly homogeneous, as revealed by element mapping via energy-dispersive spectrometry. Scanning electron microscope examinations revealed that deposition temperature and electric field strength had profound influence on resultant microstructure, while composition of the precursor solution had little effect. A highly porous cauliflower structure ideal for solid oxide fuel cell anode performance was obtained with a deposition temperature of 450 deg. C under an electric field introduced by an applied voltage of 12 kV. Films obtained with a lower deposition temperature of 250 deg. C or a higher applied voltage of 15 kV resulted in denser films with low porosity, while lower applied voltages of 7 or 5 kV resulted in thinner or discontinuous films due to the insufficient electrostatic attraction on the aerosol droplets. As revealed by AC impedance measurement, the area specific resistances of the Ni-CGO anode with porous cauliflower structure were rather low and a value of 0.09 Ω cm 2 at 550 deg. C was obtained

  7. Lead-doped electron-beam-deposited Bi-Sr-Ca-Cu-O superconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Agnihotry, S.A.; Saini, K.K.; Kant, C.; Sharma, C.P.; Ekbote, S.N.; Asthana, P.; Nagpal, K.C.; Chandra, S. (National Physical Lab., New Delhi (India))

    1991-03-20

    Superconducting thin films of the lead-doped Bi-Sr-Ca-Cu-O system have been prepared on (100) single-crystal SrTiO{sub 3} substrates by an electron beam deposition technique using a single sintered pellet as the evaporation source. As-deposited films are amorphous and non-superconducting; post-deposition annealing at an optimized temperature in air has been found to result in crystalline and superconducting films. The superconducting characteristics of the films have been observed to be sensitive not only to the duration and temperature of post-deposition annealing but also to the lead content and the sintering parameters for the pellet to be used as the evaporation source. A pellet with nominal composition Bi{sub 3}Pb{sub 1}Sr{sub 3}Ca{sub 3}Cu{sub 4}O{sub y} that had been sintered for 200 h zero resistivity Tc{sup 0}=112 K. However, films deposited using such a pellet as the evaporation source had Tc{sup 0} {approx equal} 73-78 K, as had the films deposited from a pellet without any lead. We investigated systematically films deposited from pellets with more lead and sintered for different durations. It is evident from these investigations that pellets with nominal composition Bi{sub 3}Pb{sub 2}Sr{sub 3}Ca{sub 3}Cu{sub 4}O{sub y}, i.e. with an excess of lead, and sintered for about 75 h when used as the evaporation source yield films with Tc{sup 0} {approx equal} 100 K when annealed between 835 and 840deg C for an optimized long duration. The films are characterized by X-ray diffraction and energy-dispersive spectroscopy techniques and have been found to be highly c axis oriented. The effect of lead in promoting a high Tc{sup 0}=110 K phase seems to be similar to that in bulk ceramics. (orig.).

  8. Similar-Case-Based Optimization of Beam Arrangements in Stereotactic Body Radiotherapy for Assisting Treatment Planners

    Directory of Open Access Journals (Sweden)

    Taiki Magome

    2013-01-01

    Full Text Available Objective. To develop a similar-case-based optimization method for beam arrangements in lung stereotactic body radiotherapy (SBRT to assist treatment planners. Methods. First, cases that are similar to an objective case were automatically selected based on geometrical features related to a planning target volume (PTV location, PTV shape, lung size, and spinal cord position. Second, initial beam arrangements were determined by registration of similar cases with the objective case using a linear registration technique. Finally, beam directions of the objective case were locally optimized based on the cost function, which takes into account the radiation absorption in normal tissues and organs at risk. The proposed method was evaluated with 10 test cases and a treatment planning database including 81 cases, by using 11 planning evaluation indices such as tumor control probability and normal tissue complication probability (NTCP. Results. The procedure for the local optimization of beam arrangements improved the quality of treatment plans with significant differences (P<0.05 in the homogeneity index and conformity index for the PTV, V10, V20, mean dose, and NTCP for the lung. Conclusion. The proposed method could be usable as a computer-aided treatment planning tool for the determination of beam arrangements in SBRT.

  9. Metal oxide targets produced by the polymer-assisted deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, Mitch A., E-mail: mitch@berkeley.ed [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Ali, Mazhar N.; Chang, Noel N.; Parsons-Moss, T. [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Ashby, Paul D. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Gates, Jacklyn M. [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Stavsetra, Liv [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Gregorich, Kenneth E.; Nitsche, Heino [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2010-02-11

    The polymer-assisted deposition (PAD) method was used to create crack-free homogenous metal oxide films for use as targets in nuclear science applications. Metal oxide films of europium, thulium, and hafnium were prepared as models for actinide oxides. Films produced by a single application of PAD were homogenous and uniform and ranged in thickness from 30 to 320 nm. Reapplication of the PAD method (six times) with a 10% by weight hafnium(IV) solution resulted in an equally homogeneous and uniform film with a total thickness of 600 nm.

  10. Metal oxide targets produced by the polymer-assisted deposition method

    International Nuclear Information System (INIS)

    Garcia, Mitch A.; Ali, Mazhar N.; Chang, Noel N.; Parsons-Moss, T.; Ashby, Paul D.; Gates, Jacklyn M.; Stavsetra, Liv; Gregorich, Kenneth E.; Nitsche, Heino

    2010-01-01

    The polymer-assisted deposition (PAD) method was used to create crack-free homogenous metal oxide films for use as targets in nuclear science applications. Metal oxide films of europium, thulium, and hafnium were prepared as models for actinide oxides. Films produced by a single application of PAD were homogenous and uniform and ranged in thickness from 30 to 320 nm. Reapplication of the PAD method (six times) with a 10% by weight hafnium(IV) solution resulted in an equally homogeneous and uniform film with a total thickness of 600 nm.

  11. Results of the studies on energy deposition in IR6 superconducting magnets from continuous beam loss on the TCDQ system

    CERN Document Server

    Bracco, C; Presland, A; Redaelli, S; Sarchiapone, L; Weiler, T

    2007-01-01

    A single sided mobile graphite diluter block TCDQ, in combination with a two-sided secondary collimator TCS and an iron shield TCDQM, will be installed in front of the superconducting quadrupole Q4 magnets in IR6, in order to protect it and other downstream LHC machine elements from destruction in the event of a beam dump that is not synchronised with the abort gap. The TCDQ will be positioned close to the beam, and will intercept the particles from the secondary halo during low beam lifetime. Previous studies (1-4) have shown that the energy deposited in the Q4 magnet coils can be close to or above the quench limit. In this note the results of the latest FLUKA energy deposition simulations for Beam 2 are described, including an upgrade possibility for the TCDQ system with an additional shielding device. The results are discussed in the context of the expected performance levels for the different phases of LHC operation.

  12. Finite element modelling of stress development during deposition of ion assisted coatings

    International Nuclear Information System (INIS)

    Ward, D.J.; Arnell, R.D.

    2002-01-01

    Ion assisted physical vapour deposited (IAPVD) films typically have a high state of residual stress. This residual stress comprises two components: a thermal stress, which forms as the system cools to room temperature; and an intrinsic stress which is caused by the processes of deposition. Much work has been published on the tribology and mechanical behaviour of surface coatings without consideration of the residual stress. It was therefore considered desirable to develop a finite element (FE) simulation to be used either as a precursor to any realistic mechanical study of the behaviour of such surface coatings, or to be used as a tool to study the effects of varying the deposition parameters. Previous experimental work has shown that the residual stress is related to deposition parameters, such as incident ion and atom fluxes and energies, and recent molecular dynamics studies have indicated that trapped inert gas species may play a major role in the mechanism for creation of the intrinsic stress. The FE simulation assumes that the processes of ion bombardment and material deposition are consecutive, but as the analysis time step tends to zero this assumption approximates the simultaneity of the processes. Suitable mathematical descriptions are employed in the bombarded region of the growing coating to simulate the macroscopic effects of the microscopic atomic collision phenomena and diffusion processes. Two finite element simulations are presented. The first is based on an analytical model, which has gained popular acceptance and this was presented in a previous year at this conference. The second builds on this to simulate wider aspects of known behaviour and is presented in this follow-up paper. The predicted trends of mean stress and its distribution are similar to those observed in published experimental work

  13. Organic/hybrid thin films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

    Science.gov (United States)

    Stiff-Roberts, Adrienne D.; Ge, Wangyao

    2017-12-01

    Some of the most exciting materials research in the 21st century attempts to resolve the challenge of simulating, synthesizing, and characterizing new materials with unique properties designed from first principles. Achievements in such development for organic and organic-inorganic hybrid materials make them important options for electronic and/or photonic devices because they can impart multi-functionality, flexibility, transparency, and sustainability to emerging systems, such as wearable electronics. Functional organic materials include small molecules, oligomers, and polymers, while hybrid materials include inorganic nanomaterials (such as zero-dimensional quantum dots, one-dimensional carbon nanotubes, or two-dimensional nanosheets) combined with organic matrices. A critically important step to implementing new electronic and photonic devices using such materials is the processing of thin films. While solution-based processing is the most common laboratory technique for organic and hybrid materials, vacuum-based deposition has been critical to the commercialization of organic light emitting diodes based on small molecules, for example. Therefore, it is desirable to explore vacuum-based deposition of organic and hybrid materials that include larger macromolecules, such as polymers. This review article motivates the need for physical vapor deposition of polymeric and hybrid thin films using matrix-assisted pulsed laser evaporation (MAPLE), which is a type of pulsed laser deposition. This review describes the development of variations in the MAPLE technique, discusses the current understanding of laser-target interactions and growth mechanisms for different MAPLE variations, surveys demonstrations of MAPLE-deposited organic and hybrid materials for electronic and photonic devices, and provides a future outlook for the technique.

  14. High-speed deposition of titanium carbide coatings by laser-assisted metal–organic CVD

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Yansheng [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tu, Rong, E-mail: turong@whut.edu.cn [State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Goto, Takashi [Institute for Materials Research, Tohoku University, Aoba-ku, 2-1-1 Katahira, Sendai 980-8577 (Japan)

    2013-08-01

    Graphical abstract: - Highlights: • A semiconductor laser was first used to prepare wide-area LCVD-TiC{sub x} coatings. • The effect of laser power for the deposition of TiC{sub x} coatings was discussed. • TiC{sub x} coatings showed a columnar cross section and a dense surface texture. • TiC{sub x} coatings had a 1–4 order lower laser density than those of previous reports. • This study gives the possibility of LCVD applying on the preparation of TiC{sub x} coating. - Abstract: A semiconductor laser-assisted chemical vapor deposition (LCVD) of titanium carbide (TiC{sub x}) coatings on Al{sub 2}O{sub 3} substrate using tetrakis (diethylamido) titanium (TDEAT) and C{sub 2}H{sub 2} as source materials were investigated. The influences of laser power (P{sub L}) and pre-heating temperature (T{sub pre}) on the microstructure and deposition rate of TiC{sub x} coatings were examined. Single phase of TiC{sub x} coatings were obtained at P{sub L} = 100–200 W. TiC{sub x} coatings had a cauliflower-like surface and columnar cross section. TiC{sub x} coatings in the present study had the highest R{sub dep} (54 μm/h) at a relative low T{sub dep} than those of conventional CVD-TiC{sub x} coatings. The highest volume deposition rate (V{sub dep}) of TiC{sub x} coatings was about 4.7 × 10{sup −12} m{sup 3} s{sup −1}, which had 3–10{sup 5} times larger deposition area and 1–4 order lower laser density than those of previous LCVD using CO{sub 2}, Nd:YAG and argon ion laser.

  15. The role of low-energy electrons in focused electron beam induced deposition: four case studies of representative precursors

    Directory of Open Access Journals (Sweden)

    Rachel M. Thorman

    2015-09-01

    Full Text Available Focused electron beam induced deposition (FEBID is a single-step, direct-write nanofabrication technique capable of writing three-dimensional metal-containing nanoscale structures on surfaces using electron-induced reactions of organometallic precursors. Currently FEBID is, however, limited in resolution due to deposition outside the area of the primary electron beam and in metal purity due to incomplete precursor decomposition. Both limitations are likely in part caused by reactions of precursor molecules with low-energy (3, Pt(PF34, Co(CO3NO, and W(CO6. Through these case studies, it is evident that this combination of studies can provide valuable insight into potential mechanisms governing deposit formation in FEBID. Although further experiments and new approaches are needed, these studies are an important stepping-stone toward better understanding the fundamental physics behind the deposition process and establishing design criteria for optimized FEBID precursors.

  16. Surfactant-assisted electrochemical deposition of {alpha}-cobalt hydroxide for supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Ting [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Jiang, Hao; Ma, Jan [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Temasek Laboratories, Nanyang Technological University, Singapore 637553 (Singapore)

    2011-01-15

    A N-methylpyrrolidone (NMP) assisted electrochemical deposition route has been developed to realize the synthesis of a dense {alpha}-Co(OH){sub 2} layered structure, which is composed of nanosheets, each with a thickness of 10 nm. The capacitive characteristics of the as-obtained {alpha}-Co(OH){sub 2} are investigated by means of cyclic voltammetry (CV), charge/discharge characterization, and electrochemical impedance spectroscopy (EIS), in 1 M KOH electrolyte. The results indicate that {alpha}-Co(OH){sub 2} prepared in the presence of 20 vol.% NMP has denser and thin layered structure which promotes an increased surface area and a shortened ion diffusion path. The as-prepared {alpha}-Co(OH){sub 2} shows better electrochemical performance with specific capacitance of 651 F g{sup -1} in a potential range of -0.1 to 0.45 V. These findings suggest that the surfactant-assisted electrochemical deposition is a promising process for building densely packed material systems with enhanced properties, for application in supercapacitors. (author)

  17. Phase Equilibrium of TiO2 Nanocrystals in Flame-Assisted Chemical Vapor Deposition.

    Science.gov (United States)

    Liu, Changran; Camacho, Joaquin; Wang, Hai

    2018-01-19

    Nano-scale titanium oxide (TiO 2 ) is a material useful for a wide range of applications. In a previous study, we showed that TiO 2 nanoparticles of both rutile and anatase crystal phases could be synthesized over the size range of 5 to 20 nm in flame-assisted chemical vapor deposition. Rutile was unexpectedly dominant in oxygen-lean synthesis conditions, whereas anatase is the preferred phase in oxygen-rich gases. The observation is in contrast to the 14 nm rutile-anatase crossover size derived from the existing crystal-phase equilibrium model. In the present work, we made additional measurements over a wider range of synthesis conditions; the results confirm the earlier observations. We propose an improved model for the surface energy that considers the role of oxygen desorption at high temperatures. The model successfully explains the observations made in the current and previous work. The current results provide a useful path to designing flame-assisted chemical vapor deposition of TiO 2 nanocrystals with controllable crystal phases. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition.

    Science.gov (United States)

    Wang, C; Ke, S Y; Yang, J; Hu, W D; Qiu, F; Wang, R F; Yang, Y

    2015-03-13

    The dependence of the electronic properties of a single Ge/Si quantum dot (QD) grown by the ion-beam sputtering deposition technique on growth temperature and QD diameter is investigated by conductive atomic force microscopy (CAFM). The Si-Ge intermixing effect is demonstrated to be important for the current distribution of single QDs. The current staircase induced by the Coulomb blockade effect is observed at higher growth temperatures (>700 °C) due to the formation of an additional barrier between dislocated QDs and Si substrate for the resonant tunneling of holes. According to the proposed single-hole-tunneling model, the fact that the intermixing effect is observed to increase as the incoherent QD size decreases may explain the increase in the starting voltage of the current staircase and the decrease in the current step width.

  19. Simulation of energy deposit distribution in water for 10 and 25 MeV electron beams

    International Nuclear Information System (INIS)

    Borrell Carbonell, Maria de los Angeles.

    1977-01-01

    The Monte Carlo method was applied to transport simulation of electron beams from the exit window of a linear accelerator till the absorption by a water phantom. The distribution of energy deposit is calculated for ideal apparatus and experimental conditions. Calculations are made for a distance window-water surface of one meter, for 10 and 25 MeV monoenergetic incident electrons, and for different fields (15x15 cm 2 to 4x4 cm 2 ). Comparisons with experimental measurements obtained in comparable conditions with a Sagittaire accelerator (C.G.R.-MeV), show a good agreement concerning radial distribution and depth distribution around isodose 100%. However a certain disagreement appears in the end of depth penetration [fr

  20. Metallographic techniques for evaluation of Thermal Barrier Coatings produced by Electron Beam Physical Vapor Deposition

    International Nuclear Information System (INIS)

    Kelly, Matthew; Singh, Jogender; Todd, Judith; Copley, Steven; Wolfe, Douglas

    2008-01-01

    Thermal Barrier Coatings (TBC) produced by Electron Beam Physical Vapor Deposition (EB-PVD) are primarily applied to critical hot section turbine components. EB-PVD TBC for turbine applications exhibit a complicated structure of porous ceramic columns separated by voids that offers mechanical compliance. Currently there are no standard evaluation methods for evaluating EB-PVD TBC structure quantitatively. This paper proposes a metallographic method for preparing samples and evaluating techniques to quantitatively measure structure. TBC samples were produced and evaluated with the proposed metallographic technique and digital image analysis for columnar grain size and relative intercolumnar porosity. Incorporation of the proposed evaluation technique will increase knowledge of the relation between processing parameters and material properties by incorporating a structural link. Application of this evaluation method will directly benefit areas of quality control, microstructural model development, and reduced development time for process scaling

  1. Atomic layer deposition assisted pattern transfer technology for ultra-thin block copolymer films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Wenhui; Luo, Jun; Meng, Lingkuan; Li, Junjie; Xiang, Jinjuan; Li, Junfeng; Wang, Wenwu; Chen, Dapeng; Ye, Tianchun; Zhao, Chao

    2016-08-31

    As an emerging developing technique for next-generation lithography, directed self-assembly (DSA) of block copolymer (BCP) has attracted numerous attention and has been a potential alternative to supplement the intrinsic limitations of conventional photolithography. In this work, the self-assembling properties of a lamellar diblock copolymer poly(styrene-b-methylmethacrylate) (PS-b-PMMA, 22k-b-22k, L{sub 0} = 25 nm) on Si substrate and an atomic layer deposition (ALD)-assisted pattern transfer technology for the application of DSA beyond 16/14 nm complementary metal oxide semiconductor (CMOS) technology nodes, were investigated. Firstly, two key processing parameters of DSA, i.e. annealing temperatures and durations of BCP films, were optimized to achieve low defect density and high productivity. After phase separation of BCP films, self-assembling patterns of low defect density should be transferred to the substrate. However, due to the nano-scale thickness and the weak resistance of BCP films to dry etching, it is nearly impossible to transfer the BCP patterns directly to the substrate. Therefore, an ALD-based technology was explored in this work, in which deposited Al{sub 2}O{sub 3} selectively reacts with PMMA blocks thus hardening the PMMA patterns. After removing PS blocks by plasma etching, hardened PMMA patterns were left and transferred to underneath SiO{sub 2} hard mask layer. Using this patterned hard mask, nanowire array of 25 nm pitch were realized on Si substrate. From this work, a high-throughput DSA baseline flow and related ALD-assisted pattern transfer technique were developed and proved to have good capability with the mainstream CMOS technology. - Highlights: • Optimization on self-assembly process for high productivity and low defectivity • Enhancement of etching ratio and resistance by atomic layer deposition (ALD) • A hard mask was used for pattern quality improvement and contamination control.

  2. Direct deposition of inorganic–organic hybrid semiconductors and their template-assisted microstructures

    International Nuclear Information System (INIS)

    Dwivedi, V.K.; Baumberg, J.J.; Prakash, G. Vijaya

    2013-01-01

    A straight-forward method is developed to deposit a new class of self-organized inorganic–organic (IO) hybrid, (C 12 H 25 NH 3 ) 2 PbI 4 . These IO hybrid structures are stacked-up as natural multiple quantum well structures and exhibit strong room-temperature exciton emission and other multifunctional features. Here it is successfully demonstrated that these materials can be directly carved into 2D photonic structures from the inexpensive template-assisted electrochemical deposition followed by solution processing. The applicability of this method for many such varieties of IO-hybrids is also explored. By appropriately controlling the deposition conditions and the self-assembly templates, target structures are developed for new-generation low-cost photonic devices. -- Highlights: ► New fabrication methodology for self-organized inorganic–organic hybrids. ► Strongly confined exciton emission and photoconductive properties. ► Simple bottom-up fabrication for device applications.

  3. Real time monitoring of filament-assisted chemically vapor deposited diamond by spectroscopic ellipsometry

    International Nuclear Information System (INIS)

    Yue Cong; An, I.; Vedam, K.; Collins, R.W.; Nguyen, H.V.; Messier, R.

    1991-01-01

    Spectroscopic ellipsometry over the range 1.5-4.5 eV was applied as a real time probe of the processes occurring in the initial nucleation of thin film diamond by heated-filament assisted chemical vapor deposition. Using both untreated and diamond-polished c-Si substrates, as well as both carburized and uncarburized tungsten filaments, it was possible to separate and characterize competing phenomena, including the increase in surface temperature induced by filament ignition, the formation of carbide layers, contamination of the substrate by tungsten from the filament, annealing of diamond polishing damage, and, finally, diamond nucleation. An accurate measurement of the true temperature of the substrate surface averaged over the top 500 A can be obtained from the energy position of critical points in the c-Si band structure. For diamond deposition, we operated with an initial excess flow of CH 4 to stimulate nucleation. We applied real time feedback and manual control to reduce the CH 4 flow in the first monolayers of deposition. The thickness of diamond and an estimate of its nucleation density can be obtained from real time spectra, and the latter was in good agreement with that obtained from scanning electron microscopy. (orig.)

  4. Focused Electrospray Deposition for Matrix-assisted Laser Desorption/Ionization Mass Spectrometry

    International Nuclear Information System (INIS)

    Jeong, Kyung Hwan; Seo, Jong Cheol; Yoon, Hye Joo; Shin, Seung Koo

    2010-01-01

    Focused electrospray (FES) deposition method is presented for matrix-assisted laser desorption/ionization (MALDI) mass spectrometry. FES ion optics consists of two cylindrical focusing electrodes capped with a truncated conical electrode through which an electrospray emitter passes along the cylindrical axis. A spray of charged droplets is focused onto a sample well on a MALDI target plate under atmospheric pressure. The shape and size distributions of matrix crystals are visualized by scanning electron microscope and the mass spectra are obtained by time-of-flight mass spectrometry. Angiotensin II, bradykinin, and substance P are used as test samples, while α-cyano-4-hydroxycinnamic acid and dihydroxybenzoic acid are employed as matrices. FES of a sample/matrix mixture produces fine crystal grains on a 1.3 mm spot and reproducibly yields the mass spectra with little shot-to-shot and spot-to-spot variations. Although FES greatly stabilizes the signals, the space charge due to matrix ions limits the detection sensitivity of peptides. To avoid the space charge problem, we adopted a dual FES/FES mode, which separately deposits matrix and sample by FES in sequence. The dual FES/FES mode reaches the detection sensitivity of 0.88 amol, enabling ultrasensitive detection of peptides by homogeneously depositing matrix and sample under atmospheric pressure

  5. Carbon decorative coatings by dip-, spin-, and spray-assisted layer-by-layer assembly deposition.

    Science.gov (United States)

    Hong, Jinkee; Kang, Sang Wook

    2011-09-01

    We performed a comparative surface analysis of all-carbon nano-objects (multiwall carbon nanotubes (MWNT) or graphene oxide (GO) sheets) based multilayer coatings prepared using three widely used nanofilm fabrication methods: dip-, spin-, and spray-assisted layer-by-layer (LbL) deposition. The resultant films showed a marked difference in their growth mechanisms and surface morphologies. Various carbon decorative coatings were synthesized with different surface roughness values, despite identical preparation conditions. In particular, smooth to highly rough all-carbon surfaces, as determined by atomic force microscopy (AFM) and scanning electron microscopy (SEM), were readily obtained by manipulating the LbL deposition methods. As was confirmed by the AFM and SEM analyses, this finding indicated the fundamental morphological evolution of one-dimensional nano-objects (MWNT) and two-dimensional nano-objects (GO) by control of the surface roughness through the deposition method. Therefore, an analysis of the three LbL-assembly methods presented herein may offer useful information about the industrial use of carbon decorative coatings and provide an insight into ways to control the structures of multilayer coatings by tuning the morphologies of carbon nano-objects.

  6. Fabrication and characterization of Ni-YSZ anode functional coatings by electron beam physical vapor deposition

    International Nuclear Information System (INIS)

    Meng, B.; Sun, Y.; He, X.D.; Peng, J.H.

    2009-01-01

    Two kinds of NiO-YSZ (yttria-stabilized zirconia) coatings, respectively with uniform and gradient distributions of NiO content along the coating thickness direction, were prepared by electron beam physical vapor deposition (EB-PVD) via adjusting electron beam currents. Then uniform and graded Ni-YSZ coatings were obtained from corresponding NiO-YSZ coatings after a reduction treatment. For uniform Ni-YSZ coating, the composition and porosity distributions along the coating thickness were uniform. The specific surface area and total pore volume for this coating could reach up to 4.330 m 2 g -1 and 0.0346 cm 3 g -1 respectively. The area specific resistance (ASR) of this coating kept increasing with the rise in temperature and an ASR of 2.1 x 10 -5 Ω cm 2 was obtained at 600 o C. For graded Ni-YSZ coating, a gradient in Ni content and porosity was realized along the coating thickness. A high porosity of up to 33% was achieved in the part of the coating close to the substrate, while a low porosity of 10% was obtained in the part close to coating surface.

  7. Studies on mass deposition effect and energy effect of biomolecules implanted by N+ ion beam

    International Nuclear Information System (INIS)

    Shao Chunlin; Yu Zengliang

    1994-05-01

    By analyzing some spectrum of tyrosine sample implanted by N + ion beam, it is deduced that the implantation N + could react with the tyrosine molecule and substitute =C 5 H- group of benzene ring to produce a N-heterocyclic compound. This compound would notably affect the residual activity of the sample. Moreover, the percentage of the product molecules to the damaged tyrosine molecules is larger than the reciprocal of the proportion of their extinction coefficients. On the other hand, by comparing the release of inorganic phosphate, it is found that the radiation sensibility for four basic nucleotides is 5'-dTMP>5'-CMP>5'-GMP>5'-AMP. to implanted nucleotides, alkali treatment and heat treatment could increase the amount of inorganic phosphate. The amount of inorganic phosphate in the nucleotide samples directly implanted by ions beam is about 60% of the total amount of inorganic phosphate that could be released from the implanted samples heated at 90 degree C for 1.75 hours. Alkali treatment could damage and split the free bases released from the implanted nucleotides, but heat treatment might repair those damaged bases. Above results prove that ions implantation to biomolecules has the mass deposition effects and energy effects

  8. Closed-Loop Process Control for Electron Beam Freeform Fabrication and Deposition Processes

    Science.gov (United States)

    Taminger, Karen M. (Inventor); Hafley, Robert A. (Inventor); Martin, Richard E. (Inventor); Hofmeister, William H. (Inventor)

    2013-01-01

    A closed-loop control method for an electron beam freeform fabrication (EBF(sup 3)) process includes detecting a feature of interest during the process using a sensor(s), continuously evaluating the feature of interest to determine, in real time, a change occurring therein, and automatically modifying control parameters to control the EBF(sup 3) process. An apparatus provides closed-loop control method of the process, and includes an electron gun for generating an electron beam, a wire feeder for feeding a wire toward a substrate, wherein the wire is melted and progressively deposited in layers onto the substrate, a sensor(s), and a host machine. The sensor(s) measure the feature of interest during the process, and the host machine continuously evaluates the feature of interest to determine, in real time, a change occurring therein. The host machine automatically modifies control parameters to the EBF(sup 3) apparatus to control the EBF(sup 3) process in a closed-loop manner.

  9. The Investigation of E-beam Deposited Titanium Dioxide and Calcium Titanate Thin Films

    Directory of Open Access Journals (Sweden)

    Kristina BOČKUTĖ

    2013-09-01

    Full Text Available Thin titanium dioxide and calcium titanate films were deposited using electron beam evaporation technique. The substrate temperature during the deposition was changed from room temperature to 600 °C to test its influence on TiO2 film formation and optical properties. The properties of CaTiO3 were investigated also. For the evaluation of the structural properties the formed thin ceramic films were studied by X-ray diffraction (XRD, energy dispersive spectrometry (EDS, scanning electron microscopy (SEM and atomic force microscopy (AFM. Optical properties of thin TiO2 ceramics were investigated using optical spectroscope and the experimental data were collected in the ultraviolet-visible and near-infrared ranges with a step width of 1 nm. Electrical properties were investigated by impedance spectroscopy.It was found that substrate temperature has influence on the formed thin films density. The density increased when the substrate temperature increased. Substrate temperature had influence on the crystallographic, structural and optical properties also. DOI: http://dx.doi.org/10.5755/j01.ms.19.3.1805

  10. Transparent conducting ZnO-CdO thin films deposited by e-beam evaporation technique

    Science.gov (United States)

    Mohamed, H. A.; Ali, H. M.; Mohamed, S. H.; Abd El-Raheem, M. M.

    2006-04-01

    Thin films of Zn{1-x} Cd{x}O with x = 0, 0.1, 0.2, 0.3, 0.4 and 0.5 at.% were deposited by electron-beam evaporation technique. It has been found that, for as-deposited films, both the transmittance and electrical resistivity decreased with increasing the Cd content. To improve the optical and electrical properties of these films, the effect of annealing temperature and time were taken into consideration for Zn{1-x} Cd{x}O film with x = 0.2. It was found that, the optical transmittance and the electrical conductivity were improved significantly with increasing the time of annealing. At fixed temperature of 300 °C, the transmittance increased with increasing the time of annealing and reached its maximum values of 81% in the visible region and 94% in the NIR region at annealing time of 120 min. The low electrical resistivity of 3.6 × 10-3 Ω cm was achieved at the same conditions. Other parameters named free carrier concentrations, refractive index, extinction coefficient, plasma frequency, and relaxation time were studied as a function of annealing temperature and time for 20% Cd content.

  11. Mechanical and tribological properties of silicon nitride films synthesized by ion beam enhanced deposition

    International Nuclear Information System (INIS)

    Chen Yuanru; Li Shizhuo; Zhang Xushou; Liu Hong; Yang Genqing; Qu Baochun

    1991-01-01

    This article describes preliminary investigations of mechanical and tribological properties of silicon nitride film formed by ion beam enhanced deposition (IBED) on GH37 (Ni-based alloys) steel. The films were synthesized by silicon vapor deposition with a rate of 1 A/s and by 40 keV nitrogen ion bombardment simultaneously. The thickness of the film was about 5000 A. X-ray photoelectron spectroscopy and infrared absorption spectroscopy revealed that a stoichiometric Si 3 N 4 film was formed. The observation of TEM showed that the IBED Si 3 N 4 film normally had an amorphous structure. However, electron diffraction patterns revealed a certain crystallinity. The mechanical and tribological properties of the films were investigated with a scratch tester, microhardness meter, and a ball-on-disc tribometer respectively. Results show that the adhesive strength between film and substrate is about 51 N, the Vickers microhardness with a load of 0.2 N is 980, the friction coefficient measured for steel against silicon nitride film ranges from 0.1 to 0.15, and the wear rate of coatings is about 6.8x10 -5 mm 3 /(mN). Finally, the relationship among thermal annealing, crystallinity and tribological characteristics of the Si 3 N 4 film is discussed. (orig.)

  12. Ion and electron beam assisted fabrication of nanostructures integrated in microfluidic chips

    International Nuclear Information System (INIS)

    Evstrapov, A.A.; Mukhin, I.S.; Bukatin, A.S.; Kukhtevich, I.V.

    2012-01-01

    In present work we have designed and fabricated microfluidic chips (MFC) with integrated nets of nanochannels and whisker nanostructures in microchannels for investigation of biological samples in their native environment. We have designed a number of MFC topologies: (a) hydrodynamic traps with nanoscale channels which link microchannels; (b) a structure with regular vertical nanorod (nanowhisker) array, which could be used as a sensitive element. These topologies were created by means of ion and electron beam assisted techniques. These MFCs allow to investigate biological objects by means of high resolution microscopy. Fabricated MFCs were investigated with emulator of biological objects in different buffer solutions.

  13. 3D magnetic nanostructures grown by focused electron and ion beam induced deposition

    Science.gov (United States)

    Fernandez-Pacheco, Amalio

    Three-dimensional nanomagnetism is an emerging research area, where magnetic nanostructures extend along the whole space, presenting novel functionalities not limited to the substrate plane. The development of this field could have a revolutionary impact in fields such as electronics, the Internet of Things or bio-applications. In this contribution, I will show our recent work on 3D magnetic nanostructures grown by focused electron and ion beam induced deposition. This 3D nano-printing techniques, based on the local chemical vapor deposition of a gas via the interaction with electrons and ions, makes the fabrication of complex 3D magnetic nanostructures possible. First, I will show how by exploiting different growth regimes, suspended Cobalt nanowires with modulated diameter can be patterned, with potential as domain wall devices. Afterwards, I will show recent results where the synthesis of Iron-Gallium alloys can be exploited in the field of artificial multiferroics. Moreover, we are developing novel methodologies combining physical vapor deposition and 3D nano-printing, creating Permalloy 3D nanostrips with controllable widths and lengths up to a few microns. This approach has been extended to more complex geometries by exploiting advanced simulation growth techniques combining Monte Carlo and continuum model methods. Throughout the talk, I will show the methodology we are following to characterize 3D magnetic nanostructures, by combining magneto-optical Kerr effect, scanning probe microscopy and electron and X-R magnetic imaging, and I will highlight some of the challenges and opportunities when studying these structures. I acknowledge funding from EPSRC and the Winton Foundation.

  14. Internal energy deposition with silicon nanoparticle-assisted laser desorption/ionization (SPALDI) mass spectrometry

    Science.gov (United States)

    Dagan, Shai; Hua, Yimin; Boday, Dylan J.; Somogyi, Arpad; Wysocki, Ronald J.; Wysocki, Vicki H.

    2009-06-01

    The use of silicon nanoparticles for laser desorption/ionization (LDI) is a new appealing matrix-less approach for the selective and sensitive mass spectrometry of small molecules in MALDI instruments. Chemically modified silicon nanoparticles (30 nm) were previously found to require very low laser fluence in order to induce efficient LDI, which raised the question of internal energy deposition processes in that system. Here we report a comparative study of internal energy deposition from silicon nanoparticles to previously explored benzylpyridinium (BP) model compounds during LDI experiments. The internal energy deposition in silicon nanoparticle-assisted laser desorption/ionization (SPALDI) with different fluorinated linear chain modifiers (decyl, hexyl and propyl) was compared to LDI from untreated silicon nanoparticles and from the organic matrix, [alpha]-cyano-4-hydroxycinnamic acid (CHCA). The energy deposition to internal vibrational modes was evaluated by molecular ion survival curves and indicated that the ions produced by SPALDI have an internal energy threshold of 2.8-3.7 eV. This is slightly lower than the internal energy induced using the organic CHCA matrix, with similar molecular survival curves as previously reported for LDI off silicon nanowires. However, the internal energy associated with desorption/ionization from the silicon nanoparticles is significantly lower than that reported for desorption/ionization on silicon (DIOS). The measured survival yields in SPALDI gradually decrease with increasing laser fluence, contrary to reported results for silicon nanowires. The effect of modification of the silicon particle surface with semifluorinated linear chain silanes, including fluorinated decyl (C10), fluorinated hexyl (C6) and fluorinated propyl (C3) was explored too. The internal energy deposited increased with a decrease in the length of the modifier alkyl chain. Unmodified silicon particles exhibited the highest analyte internal energy

  15. Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

    Energy Technology Data Exchange (ETDEWEB)

    Zaleta-Alejandre, E.; Balderas-Xicoténcatl, R. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Arrieta, M.L. Pérez [Universidad Autónoma de Zacatecas, Unidad Académica de Física, Calzada Solidaridad esq. Paseo, La Bufa s/n, C.P. 98060, Zacatecas, México (Mexico); Meza-Rocha, A.N.; Rivera-Álvarez, Z. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Falcony, C., E-mail: cfalcony@fis.cinvestav.mx [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico)

    2013-10-01

    Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min{sup −1} at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min{sup −1} were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s.

  16. Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

    International Nuclear Information System (INIS)

    Zaleta-Alejandre, E.; Balderas-Xicoténcatl, R.; Arrieta, M.L. Pérez; Meza-Rocha, A.N.; Rivera-Álvarez, Z.; Falcony, C.

    2013-01-01

    Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min −1 at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min −1 were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s

  17. Second order nonlinear optical properties of zinc oxide films deposited by low temperature dual ion beam sputtering

    International Nuclear Information System (INIS)

    Larciprete, M.C.; Passeri, D.; Michelotti, F.; Paoloni, S.; Sibilia, C.; Bertolotti, M.; Belardini, A.; Sarto, F.; Somma, F.; Lo Mastro, S.

    2005-01-01

    We investigated second order optical nonlinearity of zinc oxide thin films, grown on glass substrates by the dual ion beam sputtering technique under different deposition conditions. Linear optical characterization of the films was carried out by spectrophotometric optical transmittance and reflectance measurements, giving the complex refractive index dispersion. Resistivity of the films was determined using the four-point probe sheet resistance method. Second harmonic generation measurements were performed by means of the Maker fringes technique where the fundamental beam was originated by nanosecond laser at λ=1064 nm. We found a relatively high nonlinear optical response, and evidence of a dependence of the nonlinear coefficient on the deposition parameters for each sample. Moreover, the crystalline properties of the films were investigated by x-ray diffraction measurements and correlation with second order nonlinearity were analyzed. Finally, we investigated the influence of the oxygen flow rate during the deposition process on both the second order nonlinearity and the structural properties of the samples

  18. Fabrication of CdS films with superhydrophobicity by the microwave assisted chemical bath deposition.

    Science.gov (United States)

    Liu, Y; Tan, T; Wang, B; Zhai, R; Song, X; Li, E; Wang, H; Yan, H

    2008-04-15

    A simple method of microwave assisted chemical bath deposition (MA-CBD) was adopted to fabricate cadmium sulfide (CdS) thin films. The superhydrophobic surface with a water contact angle (CA) of 151 degrees was obtained. Via a scanning electron microscopy (SEM) observation, the film was proved having a porous micro/nano-binary structure which can change the property of the surface and highly enhance the hydrophobicity of the film. A possible mechanism was suggested to describe the growth of the porous structure, in which the microwave heating takes an important role in the formation of two distinct characteristic dimensions of CdS precipitates, the growth of CdS sheets in micro-scale and sphere particles in nano-scale. The superhydrophobic films may provide novel platforms for photovoltaic, sensor, microfluidic and other device applications.

  19. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States); Zheng, Jian-Guo [Irvine Materials Research Institute, University of California, Irvine, California 92697-2800 (United States)

    2016-07-25

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  20. Exploring the potential of laser assisted flow deposition grown ZnO for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, J., E-mail: joana.catarina@ua.pt [Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Cerqueira, A.F.R.; Sousa, M.G.; Santos, N.F. [Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Pimentel, A.; Fortunato, E. [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Cunha, A.F. da; Monteiro, T.; Costa, F.M. [Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal)

    2016-07-01

    Zinc oxide (ZnO) is a widely studied wide band gap semiconductor with applications in several fields, namely to enhance solar cells efficiency. Its ability to be grown in a wide variety of nanostructured morphologies, allowing the designing of the surface area architecture constitutes an important advantage over other semiconductors. Laser assisted flow deposition (LAFD) is a recently developed growth method, based on a vapour-solid mechanism, which proved to be a powerful approach in the production of ZnO micro/nanostructures with different morphologies as well as high crystallinity and optical quality. In the present work we report the use of the LAFD technique to grow functional ZnO nanostructures (nanoparticles and tetrapods) working as nano templates to improve the dye-sensitized solar cells (DSSCs) efficiency. The structural and morphological characterization of the as-grown ZnO crystals were performed by X-ray diffraction and electron microscopy, respectively, and the optical quality was assessed by photoluminescence spectroscopy. DSSCs were produced using a combination of these nanostructures, which were subsequently sensitized with N719 dye. An efficiency of ∼3% was achieved under simulated AM 1.5 illumination conditions for a dye loading time of 1 h. - Highlights: • Laser assisted flow deposition proved to be an efficient technique to produce high quality ZnO. • Active layer formed by an interconnected network of tetrapods and a small amount of nanoparticles. • Efficiency of ∼3% obtained under simulated AM 1.5 illumination conditions.

  1. Plasma-assisted ALD for the conformal deposition of SiO2 : process, material and electronic properties

    NARCIS (Netherlands)

    Dingemans, G.; Helvoirt, van C.A.A.; Pierreux, D.; Keuning, W.; Kessels, W.M.M.

    2012-01-01

    Plasma-assisted atomic layer deposition (ALD) was used to deposit SiO2 films in the temperature range of Tdep = 50–400°C on Si(100). H2Si[N(C2H5)2]2 and an O2 plasma were used as Si precursor and oxidant, respectively. The ALD growth process and material properties were characterized in detail.

  2. Room temperature deposition of crystalline indium tin oxide films by cesium-assisted magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Deuk Yeon; Baik, Hong-Koo

    2008-01-01

    Indium tin oxide (ITO) films were deposited on a Si (1 0 0) substrate at room temperature by cesium-assisted magnetron sputtering. Including plasma characteristics, the structural, electrical, and optical properties of deposited films were investigated as a function of cesium partial vapor pressure controlled by cesium reservoir temperature. We calculated the cesium coverage on the target surface showing maximum formation efficiency of negative ions by means of the theoretical model. Cesium addition promotes the formation efficiency of negative ions, which plays important role in enhancing the crystallinity of ITO films. In particular, the plasma density was linearly increased with cesium concentrations. The resultant decrease in specific resistivity and increase in transmittance (82% in the visible region) at optimum cesium concentration (4.24 x 10 -4 Ω cm at 80 deg. C of reservoir temperature) may be due to enhanced crystallinity of ITO films. Excess cesium incorporation into ITO films resulted in amorphization of its microstructure leading to degradation of ITO crystallinity. We discuss the cesium effects based on the growth mechanism of ITO films and the plasma density

  3. Chemical vapor deposition graphene transfer process to a polymeric substrate assisted by a spin coater

    International Nuclear Information System (INIS)

    Kessler, Felipe; Da Rocha, Caique O C; Medeiros, Gabriela S; Fechine, Guilhermino J M

    2016-01-01

    A new method to transfer chemical vapor deposition graphene to polymeric substrates is demonstrated here, it is called direct dry transfer assisted by a spin coater (DDT-SC). Compared to the conventional method DDT, the improvement of the contact between graphene-polymer due to a very thin polymeric film deposited by spin coater before the transfer process prevented air bubbles and/or moisture and avoided molecular expansion on the graphene-polymer interface. An acrylonitrile-butadiene-styrene copolymer, a high impact polystyrene, polybutadiene adipate-co-terephthalate, polylactide acid, and a styrene-butadiene-styrene copolymer are the polymers used for the transfers since they did not work very well by using the DDT process. Raman spectroscopy and optical microscopy were used to identify, to quantify, and to qualify graphene transferred to the polymer substrates. The quantity of graphene transferred was substantially increased for all polymers by using the DDT-SC method when compared with the DDT standard method. After the transfer, the intensity of the D band remained low, indicating low defect density and good quality of the transfer. The DDT-SC transfer process expands the number of graphene applications since the polymer substrate candidates are increased. (paper)

  4. Plasma-assisted deposition of microcapsule containing Aloe vera extract for cosmeto-textiles

    Science.gov (United States)

    Nascimento do Carmo, S.; Zille, A.; Souto, A. P.

    2017-10-01

    Dielectric Barrier Discharge (DBD) atmospheric-pressure plasma was employed to enhance the deposition of commercial microcapsules (MCs) containing Aloe vera extract onto a cotton/polyester (50:50) fabric. DBD conditions were optimized in term of energy dosage and contact angle. The MCs were applied by padding and printing methods and the coatings were characterized in terms of SEM and FTIR. MCs display a spherical shape with size between 2 and 8 μm with an average wall thickness of 0.5 μm. The MCs applied by printing and pretreated with a plasma dosage of 1.6 kW m2 min-1 showed the best results with an increased adhesion of 200% and significant penetration of MCs into the fibres network. Plasma printed fabric retained 230% more MCs than untreated fabric after 10 washing cycles. However, the coating resistance between unwashed and washed samples was only improved by 5%. Considering the fact that no binder or crosslinking agents were used, the DBD plasma-assisted deposition of MCs revealed to be a promising environmental safe and low cost coating technology.

  5. Hybrid chemical vapour and nanoceramic aerosol assisted deposition for multifunctional nanocomposite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Warwick, Michael E.A.; Dunnill, Charles W.; Goodall, Josie; Darr, Jawwad A.; Binions, Russell, E-mail: uccarbi@ucl.ac.uk

    2011-07-01

    Hybrid atmospheric pressure chemical vapour and aerosol assisted deposition via the reaction of vanadium acetylacetonate and a suspension of preformed titanium dioxide or cerium dioxide nanoparticles, led to the production of vanadium dioxide nanocomposite thin films on glass substrates. The preformed nanoparticle oxides used for the aerosol were synthesised using a continuous hydrothermal flow synthesis route involving the rapid reaction of a metal salt solution with a flow of supercritical water in a flow reactor. Multifunctional nanocomposite thin films from the hybrid deposition process were characterised using scanning electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The functional properties of the films were evaluated using variable temperature optical measurements to assess thermochromic behaviour and methylene blue photodecolourisation experiments to assess photocatalytic activity. The tests show that the films are multifunctional in that they are thermochromic (having a large change in infra-red reflectivity upon exceeding the thermochromic transition temperature) and have significant photocatalytic activity under irradiation with 254 nm light.

  6. Inorganic nanocomposite films with polymer nanofillers made by the concurrent multi-beam multi-target pulsed laser deposition

    Science.gov (United States)

    Darwish, Abdalla M.; Sarkisov, Sergey S.; Mele, Paolo; Saini, Shrikant; Moore, Shaelynn; Bastian, Tyler; Dorlus, Wydglif; Zhang, Xiaodong; Koplitz, Brent

    2017-08-01

    We report on the new class of inorganic nanocomposite films with the inorganic phase hosting the polymer nanofillers made by the concurrent multi-beam multi-target pulsed laser deposition of the inorganic target material and matrix assisted pulsed laser evaporation of the polymer (MBMT-PLD/MAPLE). We used the exemplary nanocomposite thermoelectric films of aluminum-doped ZnO known as AZO with the nanofillers made of poly(methyl methacrylate) known as PMMA on various substrates such as SrTiO3, sapphire, fused silica, and polyimide. The AZO target was ablated with the second harmonic (532 nm) of the Nd:YAG Q-switched laser while PMMA was evaporated from its solution in chlorobenzene frozen in liquid nitrogen with the fundamental harmonic (1064 nm) of the same laser (50 Hz pulse repetition rate). The introduction of the polymer nanofillers increased the electrical conductivity of the nanocomposite films (possibly due to the carbonization of PMMA and the creation of additional channels of electric current) three times and reduced the thermal conductivity by 1.25 times as compared to the pure AZO films. Accordingly, the increase of the thermoelectric figure-of merit ZT would be 4 times. The best performance was observed for the sapphire substrates where the films were the most uniform. The results point to a huge potential of the optimization of a broad variety of optical, opto-electronic, and solar-power nanocomposite inorganic films by the controllable introduction of the polymer nanofillers using the MBMT-PLD/MAPLE method.

  7. Molecular dynamics study of the effect of substrate temperature and Ar ion assisted deposition on the deposition of amorphous TiO_2 films

    International Nuclear Information System (INIS)

    Chen, Xian; Zhang, Jing; Zhao, Yu-Qing

    2017-01-01

    Highlights: • The surface roughness of a-TiO_2 films is decreased with the increment of the Ar ion assisted energy. • The surface roughness of a-TiO_2 films is decreased with higher substrate temperature when the substrate has an island structure. • The assisted Ar ion has power of making a flat surface and increasing the local temperature. • The assisted Ar ion will influence the growth mode with the change of surface atom mobility. • The Volmer-Weber (island) growth mode is inhibited with a high assisted Ar ion energy. - Abstract: This paper has investigated the impact of the substrate temperature and Ar ion assisted deposition on the surface structure formation mechanism and the film properties during the amorphous TiO_2 thin film deposition process with the molecular dynamics simulation method. The results show that the reduction of the surface roughness happen when the energy of Ar ions assisted is increased or the substrate temperature rises, and also the film density on surface is changed with the increasing of Ar ions energy and substrate temperature. It is also found that the Volmer-Weber (island) growth mode of films is promoted by the lower Ar ion energy and higher substrate temperature when the substrate has an island structure. The assisted Ar ion has power of making a flat surface and increasing the local temperature. Besides, it will influence the growth mode with the change of surface atom mobility. With a high assisted Ar ion energy the Volmer-Weber (island) growth mode is inhibited, which will be conducive to the formation of more smooth film surface.

  8. Molecular dynamics study of the effect of substrate temperature and Ar ion assisted deposition on the deposition of amorphous TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xian, E-mail: mus_c@qq.com [Science and Technology on Analog Integrated Circuit Laboratory, ChongQing, 401332 (China); Zhang, Jing [Science and Technology on Analog Integrated Circuit Laboratory, ChongQing, 401332 (China); Zhao, Yu-Qing [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’AN, 710049 (China)

    2017-05-15

    Highlights: • The surface roughness of a-TiO{sub 2} films is decreased with the increment of the Ar ion assisted energy. • The surface roughness of a-TiO{sub 2} films is decreased with higher substrate temperature when the substrate has an island structure. • The assisted Ar ion has power of making a flat surface and increasing the local temperature. • The assisted Ar ion will influence the growth mode with the change of surface atom mobility. • The Volmer-Weber (island) growth mode is inhibited with a high assisted Ar ion energy. - Abstract: This paper has investigated the impact of the substrate temperature and Ar ion assisted deposition on the surface structure formation mechanism and the film properties during the amorphous TiO{sub 2} thin film deposition process with the molecular dynamics simulation method. The results show that the reduction of the surface roughness happen when the energy of Ar ions assisted is increased or the substrate temperature rises, and also the film density on surface is changed with the increasing of Ar ions energy and substrate temperature. It is also found that the Volmer-Weber (island) growth mode of films is promoted by the lower Ar ion energy and higher substrate temperature when the substrate has an island structure. The assisted Ar ion has power of making a flat surface and increasing the local temperature. Besides, it will influence the growth mode with the change of surface atom mobility. With a high assisted Ar ion energy the Volmer-Weber (island) growth mode is inhibited, which will be conducive to the formation of more smooth film surface.

  9. Development of an ion-beam sputtering system for depositing thin films and multilayers of alloys and compounds

    International Nuclear Information System (INIS)

    Gupta, Mukul; Gupta, Ajay; Phase, D.M.; Chaudhari, S.M.; Dasannacharya, B.A.

    2002-01-01

    An ion-beam sputtering (IBS) system has been designed and developed for preparing thin films and multilayers of various elements, alloys and compounds. The ion source used is a 3 cm diameter, hot-cathode Kaufman type 1.5 kV ion source. The system has been successfully tested with the deposition of various materials, and the deposition parameters were optimised for achieving good quality of thin films and multilayers. A systematic illustration of the versatility of the system to produce a variety of structures is done by depositing thin film of pure iron, an alloy film of Fe-Zr, a compound thin film of FeN, a multilayer of Fe-Ag and an isotopic multilayer of 57 FeZr/FeZr. Microstructural measurements on these films using X-ray and neutron reflectivity, atomic force microscopy (AFM), and X-ray diffraction are presented and discussed to reveal the quality of the microstructures obtained with the system. It is found that in general, the surface roughnesses of the film deposited by IBS are significantly smaller as compared to those for films deposited by e-beam evaporation. Further, the grain size of the IBS crystalline films is significantly refined as compared to the films deposited by e-beam evaporation. Grain refinement may be one of the reasons for reduced surface roughness. In the case of amorphous films, the roughness of the films does not increase appreciably beyond that of the substrate even after depositing thicknesses of several hundred angstroms

  10. Direct Fabrication of Carbon Nanotubes STM Tips by Liquid Catalyst-Assisted Microwave Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Fa-Kuei Tung

    2009-01-01

    Full Text Available Direct and facile method to make carbon nanotube (CNT tips for scanning tunneling microscopy (STM is presented. Cobalt (Co particles, as catalysts, are electrochemically deposited on the apex of tungsten (W STM tip for CNT growth. It is found that the quantity of Co particles is well controlled by applied DC voltage, concentration of catalyst solution, and deposition time. Using optimum growth condition, CNTs are successfully synthesized on the tip apex by catalyst-assisted microwave-enhanced chemical vapor deposition (CA-MPECVD. A HOPG surface is clearly observed at an atomic scale using the present CNT-STM tip.

  11. XPS study of the ultrathin a-C:H films deposited onto ion beam nitrided AISI 316 steel

    International Nuclear Information System (INIS)

    Meskinis, S.; Andrulevicius, M.; Kopustinskas, V.; Tamulevicius, S.

    2005-01-01

    Effects of the steel surface treatment by nitrogen ion beam and subsequent deposition of the diamond-like carbon (hydrogenated amorphous carbon (a-C:H) and nitrogen doped hydrogenated amorphous carbon (a-CN x :H)) films were investigated by means of the X-ray photoelectron spectroscopy (XPS). Experimental results show that nitrogen ion beam treatment of the AISI 316 steel surface even at room temperature results in the formation of the Cr and Fe nitrides. Replacement of the respective metal oxides by the nitrides takes place. Formation of the C-N bonds was observed for both ultrathin a-C:H and ultrathin a-CN x :H layers deposited onto the nitrided steel. Some Fe and/or Cr nitrides still were presented at the interface after the film deposition, too. Increased adhesion between the steel substrate and hydrogenated amorphous carbon layer after the ion beam nitridation was explained by three main factors. The first two is steel surface deoxidisation/passivation by nitrogen as a result of the ion beam treatment. The third one is carbon nitride formation at the nitrided steel-hydrogenated amorphous carbon (or a-CN x :H) film interface

  12. Application of molecular beam mass spectrometry to chemical vapor deposition studies

    International Nuclear Information System (INIS)

    Hsu, W.L.; Tung, D.M.

    1992-01-01

    A molecular beam mass spectrometer system has been designed and constructed for the specific purpose of measuring the gaseous composition of the vapor environment during chemical vapor deposition of diamond. By the intrinsic nature of mass analysis, this type of design is adaptable to a broad range of other applications that rely either on thermal- or plasma-induced chemical kinetics. When gas is sampled at a relatively high process pressure (∼2700 Pa for our case), supersonic gas expansion at the sampling orifice can cause the detected signals to have a complicated dependence on the operating conditions. A comprehensive discussion is given on the effect of gas expansion on mass discrimination and signal scaling with sampling pressure and temperature, and how these obstacles can be overcome. This paper demonstrates that radical species can be detected with a sensitivity better than 10 ppm by the use of threshold ionization. A detailed procedure is described whereby one can achieve quantitative analysis of the detected species with an accuracy of ±20%. This paper ends with an example on the detection of H, H 2 , CH 3 , CH 4 , and C 2 H 2 during diamond growth

  13. Biased Target Ion Beam Deposition and Nanoskiving for Fabricating NiTi Alloy Nanowires

    Science.gov (United States)

    Hou, Huilong; Horn, Mark W.; Hamilton, Reginald F.

    2016-12-01

    Nanoskiving is a novel nanofabrication technique to produce shape memory alloy nanowires. Our previous work was the first to successfully fabricate NiTi alloy nanowires using the top-down approach, which leverages thin film technology and ultramicrotomy for ultra-thin sectioning. For this work, we utilized biased target ion beam deposition technology to fabricate nanoscale (i.e., sub-micrometer) NiTi alloy thin films. In contrast to our previous work, rapid thermal annealing was employed for heat treatment, and the B2 austenite to R-phase martensitic transformation was confirmed using stress-temperature and diffraction measurements. The ultramicrotome was programmable and facilitated sectioning the films to produce nanowires with thickness-to-width ratios ranging from 4:1 to 16:1. Energy dispersive X-ray spectroscopy analysis confirmed the elemental Ni and Ti make-up of the wires. The findings exposed the nanowires exhibited a natural ribbon-like curvature, which depended on the thickness-to-width ratio. The results demonstrate nanoskiving is a potential nanofabrication technique for producing NiTi alloy nanowires that are continuous with an unprecedented length on the order of hundreds of micrometers.

  14. Tribological coatings for complex mechanical elements produced by supersonic cluster beam deposition of metal dichalcogenide nanoparticles

    Science.gov (United States)

    Piazzoni, C.; Buttery, M.; Hampson, M. R.; Roberts, E. W.; Ducati, C.; Lenardi, C.; Cavaliere, F.; Piseri, P.; Milani, P.

    2015-07-01

    Fullerene-like MoS2 and WS2 nanoparticles can be used as building blocks for the fabrication of fluid and solid lubricants. Metal dichalcogenide films have a very low friction coefficient in vacuum, therefore they have mostly been used as solid lubricants in space and vacuum applications. Unfortunately, their use is significantly hampered by the fact that in the presence of humidity, oxygen and moisture, the low-friction properties of these materials rapidly degrade due to oxidation. The use of closed-cage MoS2 and WS2 nanoparticles may eliminate this problem, although the fabrication of lubricant thin films starting from dichalcogenide nanoparticles is, to date, a difficult task. Here we demonstrate the use of supersonic cluster beam deposition for the coating of complex mechanical elements (angular contact ball bearings) with nanostructured MoS2 and WS2 thin films. We report structural and tribological characterization of the coatings in view of the optimization of tribological performances for aerospace applications.

  15. Suspended tungsten-based nanowires with enhanced mechanical properties grown by focused ion beam induced deposition

    Science.gov (United States)

    Córdoba, Rosa; Lorenzoni, Matteo; Pablo-Navarro, Javier; Magén, César; Pérez-Murano, Francesc; María De Teresa, José

    2017-11-01

    The implementation of three-dimensional (3D) nano-objects as building blocks for the next generation of electro-mechanical, memory and sensing nano-devices is at the forefront of technology. The direct writing of functional 3D nanostructures is made feasible by using a method based on focused ion beam induced deposition (FIBID). We use this technique to grow horizontally suspended tungsten nanowires and then study their nano-mechanical properties by three-point bending method with atomic force microscopy. These measurements reveal that these nanowires exhibit a yield strength up to 12 times higher than that of the bulk tungsten, and near the theoretical value of 0.1 times the Young’s modulus (E). We find a size dependence of E that is adequately described by a core-shell model, which has been confirmed by transmission electron microscopy and compositional analysis at the nanoscale. Additionally, we show that experimental resonance frequencies of suspended nanowires (in the MHz range) are in good agreement with theoretical values. These extraordinary mechanical properties are key to designing electro-mechanically robust nanodevices based on FIBID tungsten nanowires.

  16. Visible light active TiO2 films prepared by electron beam deposition of noble metals

    International Nuclear Information System (INIS)

    Hou Xinggang; Ma Jun; Liu Andong; Li Dejun; Huang Meidong; Deng Xiangyun

    2010-01-01

    TiO 2 films prepared by sol-gel method were modified by electron beam deposition of noble metals (Pt, Pd, and Ag). Effects of noble metals on the chemical and surface characteristics of the films were studied using XPS, TEM and UV-Vis spectroscopy techniques. Photocatalytic activity of modified TiO 2 films was evaluated by studying the degradation of methyl orange dye solution under visible light UV irradiation. The result of TEM reveals that most of the surface area of TiO 2 is covered by tiny particles of noble metals with diameter less than 1 nm. Broad red shift of UV-Visible absorption band of modified photocatalysts was observed. The catalytic degradation of methyl orange in aqueous solutions under visible light illumination demonstrates a significant enhancement of photocatalytic activity of these films compared with the un-loaded films. The photocatalytic efficiency of modified TiO 2 films by this method is affected by the concentration of impregnating solution.

  17. Geometry modeling of single track cladding deposited by high power diode laser with rectangular beam spot

    Science.gov (United States)

    Liu, Huaming; Qin, Xunpeng; Huang, Song; Hu, Zeqi; Ni, Mao

    2018-01-01

    This paper presents an investigation on the relationship between the process parameters and geometrical characteristics of the sectional profile for the single track cladding (STC) deposited by High Power Diode Laser (HPDL) with rectangle beam spot (RBS). To obtain the geometry parameters, namely cladding width Wc and height Hc of the sectional profile, a full factorial design (FFD) of experiment was used to conduct the experiments with a total of 27. The pre-placed powder technique has been employed during laser cladding. The influence of the process parameters including laser power, powder thickness and scanning speed on the Wc and Hc was analyzed in detail. A nonlinear fitting model was used to fit the relationship between the process parameters and geometry parameters. And a circular arc was adopted to describe the geometry profile of the cross-section of STC. The above models were confirmed by all the experiments. The results indicated that the geometrical characteristics of the sectional profile of STC can be described as the circular arc, and the other geometry parameters of the sectional profile can be calculated only using Wc and Hc. Meanwhile, the Wc and Hc can be predicted through the process parameters.

  18. Improved Understanding of Implosion Symmetry through New Experimental Techniques Connecting Hohlraum Dynamics with Laser Beam Deposition

    Science.gov (United States)

    Ralph, Joseph; Salmonson, Jay; Dewald, Eduard; Bachmann, Benjamin; Edwards, John; Graziani, Frank; Hurricane, Omar; Landen, Otto; Ma, Tammy; Masse, Laurent; MacLaren, Stephen; Meezan, Nathan; Moody, John; Parrilla, Nicholas; Pino, Jesse; Sacks, Ryan; Tipton, Robert

    2017-10-01

    Understanding what affects implosion symmetry has been a challenge for scientists designing indirect drive inertial confinement fusion experiments on the National Ignition Facility (NIF). New experimental techniques and data analysis have been employed aimed at improving our understanding of the relationship between hohlraum dynamics and implosion symmetry. Thin wall imaging data allows for time-resolved imaging of 10 keV Au l-band x-rays providing for the first time on the NIF, a spatially resolved measurement of laser deposition with time. In the work described here, we combine measurements from the thin wall imaging with time resolved views of the interior of the hohlraum. The measurements presented are compared to hydrodynamic simulations as well as simplified physics models. The goal of this work is to form a physical picture that better explains the relationship of the hohlraum dynamics and capsule ablator on laser beam propagation and implosion symmetry. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under contract DE-AC52-07NA27344.

  19. Kinetic Transition of Crystal Morphology from Nanoparticles to Dendrites during Electron Beam Induced Deposition of Gold

    Science.gov (United States)

    Park, Jeung Hun; Schneider, Nicholas; Bau, Haim; Kodambaka, Suneel; Ross, Frances

    2015-03-01

    We studied the kinetic transition from compact nanoparticle to dendritic morphology during electron beam-induced Au deposition using in situ liquid cell-based transmission electron microcopy. Radiolysis of water by electrons generates radicals and molecular species. Hydrated electrons and hydrogen and hydroxide radicals can act as reducing agents and initiate the reduction of the water-soluble precursor, HAuCl4, resulting in the precipitation of Au as nanostructures. We tracked nucleation, growth, and morphological transition of Au from movies recorded in situ, as a function of irradiated dose and liquid thickness. We identified several distinct regimes that depend on the irradiation time: (1) nucleation; (2) linear volumetric growth; (3) formation of dendritic structures; (4) coalescence and dissolution. A diffusion and reaction model for the radiolytic species and metal ions in the confined geometry of the irradiated volume is used to understand the nucleation sites and morphological transitions. We finally describe how nanoparticles can be made to grow in a stepwise manner by switching the supply of Au ions on and off electrochemically, and discuss possibilities for creating more complex nanostructures. This research was partially funded by the National Science Foundation (DMR-1310639, CMMI-1129722, and CBET-1066573).

  20. Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

    2015-01-01

    Here, we report on the electrical characterization of phase change memory cells containing a Ge 3 Sb 2 Te 6 (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles

  1. Characteristics of OTFTs based on α-ω- Dihexyl-sexithiophene(DH6T) using Organic Molecular Beam Deposition

    International Nuclear Information System (INIS)

    Han, Dae Hee; Park, Byung Eun

    2011-01-01

    We fabricated an organic thin film transistor using organic semiconductor material α-ω- Dihexyl-sexithiophene (DH6T). The organic semiconductor was deposited using organic molecular beam deposition (OMBD). The deposition rate was 0.3A/s and the final thickness was 100 nm. After deposition, we annealed at 40 deg. C, 60 deg. C, 80 deg. C. In present, DH6T was used as a p-type semiconductor, so we measured 0V∼-40V. We measured drain current versus drain voltage, drain current versus gate voltage, calculated mobility and On/Off ratio at 40 deg. C, 60 deg. C, 80 deg. C. The field-effect mobility was 8x10- 3 , 9x10- 3 , 1.2x10- 2 , and on/off ratio was 1.75x10- 2 , 1.85x10- 2 , 2.17x10- 2 , respectively.

  2. Ion-beam texturing of uniaxially textured Ni films

    International Nuclear Information System (INIS)

    Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

    2005-01-01

    The formation of biaxial texture in uniaxially textured Ni thin films via Ar-ion irradiation is reported. The ion-beam irradiation was not simultaneous with deposition. Instead, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux, which differs from conventional ion-beam-assisted deposition. The uniaxial texture is established via a nonion beam process, with the in-plane texture imposed on the uniaxial film via ion beam bombardment. Within this sequential ion beam texturing method, grain alignment is driven by selective etching and grain overgrowth

  3. Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

    NARCIS (Netherlands)

    Profijt, H. B.; M. C. M. van de Sanden,; Kessele, W. M. M.

    2013-01-01

    Two substrate-biasing techniques, i.e., substrate-tuned biasing and RF biasing, have been implemented in a remote plasma configuration, enabling control of the ion energy during plasma-assisted atomic layer deposition (ALD). With both techniques, substrate bias voltages up to -200 V have been

  4. Influence of travel speed on spray deposition uniformity from an air-assisted variable-rate sprayer

    Science.gov (United States)

    A newly developed LiDAR-guided air-assisted variable-rate sprayer for nursery and orchard applications was tested at various travel speeds to compare its spray deposition and coverage uniformity with constant-rate applications. Spray samplers, including nylon screens and water-sensitive papers (WSP)...

  5. Comparison of the Al back contact deposited by sputtering, e-beam, or thermal evaporation for inverted perovskite solar cells

    Science.gov (United States)

    Wahl, Tina; Hanisch, Jonas; Ahlswede, Erik

    2018-04-01

    In this work, we present inverted perovskite solar cells with Al top electrodes, which were deposited by three different methods. Besides the widely used thermal evaporation of Al, we also used the industrially important high deposition rate processes sputtering and electron beam evaporation for aluminium electrodes and examined the influence of the deposition method on the solar cell performance. The current-voltage characteristics of as grown solar cells with sputtered and e-beam Al electrode show an s-shape due to damage done to the organic electronic transport layers (ETL) during Al deposition. It can be cured by a short annealing step at a moderate temperature so that fill factors  >60% and power conversion efficiencies of almost 12% with negligible hysteresis can be achieved. While solar cells with thermally evaporated Al electrode do not show an s-shape, they also exhibit a clear improvement after a short annealing step. In addition, we varied the thickness of the ETL consisting of a double layer ([6,6]-Phenyl-C61-butyric acid methyl ester and bathocuproine) and investigated the influence on the solar cell parameters for the three different Al deposition methods, which showed distinct dependencies on ETL thickness.

  6. Cyan laser diode grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Turski, H.; Muziol, G.; Wolny, P.; Cywiński, G.; Grzanka, S.; Sawicka, M.; Perlin, P.; Skierbiszewski, C.

    2014-01-01

    We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (Φ N ) during quantum wells (QWs) growth. We found that high Φ N improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold current density are discussed

  7. Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Lorenzo Rigutti

    2009-01-01

    Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

  8. Tin-Assisted Synthesis of ɛ -Ga2O3 by Molecular Beam Epitaxy

    Science.gov (United States)

    Kracht, M.; Karg, A.; Schörmann, J.; Weinhold, M.; Zink, D.; Michel, F.; Rohnke, M.; Schowalter, M.; Gerken, B.; Rosenauer, A.; Klar, P. J.; Janek, J.; Eickhoff, M.

    2017-11-01

    The synthesis of ɛ -Ga2O3 and β -Ga2O3 by plasma-assisted molecular beam epitaxy on (001 )Al2O3 substrates is studied. The growth window of β -Ga2O3 in the Ga-rich regime, usually limited by the formation of volatile gallium suboxide, is expanded due to the presence of tin during the growth process, which stabilizes the formation of gallium oxides. X-ray diffraction, transmission electron microscopy, time-of-flight secondary-ion mass spectrometry, Raman spectroscopy, and atomic force microscopy are used to analyze the influence of tin on the layer formation. We demonstrate that it allows the synthesis of phase-pure ɛ -Ga2O3 . A growth model based on the oxidation of gallium suboxide by reduction of an intermediate sacrificial tin oxide is suggested.

  9. Ion beam assisted synthesis of nano-crystals in glasses (silver and lead chalcogenides)

    International Nuclear Information System (INIS)

    Espiau de Lamaestre, R.

    2005-04-01

    This work deals with the interest in ion beams for controlling nano-crystals synthesis in glasses. We show two different ways to reach this aim, insisting on importance of redox phenomena induced by the penetration and implantation of ions in glasses. We first show that we can use the great energy density deposited by the ions to tailor reducing conditions, favorable to metallic nano-crystal precipitation. In particular, we show that microscopic mechanism of radiation induced silver precipitation in glasses are analogous to the ones of classical photography. Ion beams can also be used to overcome supersaturation of elements in a given matrix. In this work, we synthesized lead chalcogenide nano-crystals (PbS, PbSe, PbTe) whose optical properties are interesting for telecommunication applications. We demonstrate the influence of complex chalcogenide chemistry in oxide glasses, and its relationship with the observed loss of growth control when nano-crystals are synthesized by sequential implantation of Pb and S in pure silica. As a consequence of this understanding, we demonstrate a novel and controlled synthesis of PbS nano-crystals, consisting in implanting sulfur into a Pb-containing glass, before annealing. Choice of glass composition provides a better control of precipitation physico-chemistry, whereas the use of implantation allows high nano-crystal volume fractions to be reached. Our study of IR emission properties of these nano-crystals shows a very high excitation cross section, and evidence for a 'dark exciton' emitting level. (author)

  10. The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals

    International Nuclear Information System (INIS)

    Remnev, G.E.; Zakoutaev, A.N.; Grushin, I.I.; Matvenko, V.M.; Potemkin, A.V.; Ryzhkov, V.A.; Chernikov, E.V.

    1996-01-01

    A high-intensity pulsed ion beam with parameters: ion energy 350-500 keV, ion current density at a target > 200 A/cm 2 , pulse duration 60 ns, was used for metal deposition. The film deposition rate was 0.6-4.0 mm/s. Transmission electron microscopy/transmission electron diffraction investigations of the copper target-film system were performed. The impurity content in the film was determined by x-ray fluorescence analysis and secondary ion mass spectrometry. The angular distributions of the ablated plasma were measured. (author). 2 figs., 7 refs

  11. The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals

    Energy Technology Data Exchange (ETDEWEB)

    Remnev, G E; Zakoutaev, A N; Grushin, I I; Matvenko, V M; Potemkin, A V; Ryzhkov, V A [Tomsk Polytechnic Univ. (Russian Federation). Nuclear Physics Inst.; Ivanov, Yu F [Construction Academy, Tomsk (Russian Federation); Chernikov, E V [Siberian Physical Technical Institute, Tomsk (Russian Federation)

    1997-12-31

    A high-intensity pulsed ion beam with parameters: ion energy 350-500 keV, ion current density at a target > 200 A/cm{sup 2}, pulse duration 60 ns, was used for metal deposition. The film deposition rate was 0.6-4.0 mm/s. Transmission electron microscopy/transmission electron diffraction investigations of the copper target-film system were performed. The impurity content in the film was determined by x-ray fluorescence analysis and secondary ion mass spectrometry. The angular distributions of the ablated plasma were measured. (author). 2 figs., 7 refs.

  12. Auger electron spectroscopy analysis of high metal content micro-structures grown by electron beam induced deposition

    International Nuclear Information System (INIS)

    Cicoira, F.; Hoffmann, P.; Olsson, C.O.A.; Xanthopoulos, N.; Mathieu, H.J.; Doppelt, P.

    2005-01-01

    An auger electron spectroscopy study was carried out on Rh-containing micro-structures grown by electron beam induced deposition (EBID) of the iso-structural and iso-electronic precursors [RhCl(PF 3 ) 2 ] 2 and [RhCl(CO) 2 ] 2 . A material containing between 55 and 60 at.% Rh was obtained from both precursors. The chemical composition of structures grown from the two different precursors indicates a similar decomposition mechanism. Deposits grown from [RhCl(PF 3 ) 2 ] 2 showed a chemical composition independent of electron energy and electron dose in the investigated range of conditions

  13. Effect of deposition distance on thickness and microstructure of silicon thin film produced by electron beam evaporation; Efeito da distancia de deposicao na espessura e microestrutura de filme fino obtido por evaporacao por feixe de eletrons

    Energy Technology Data Exchange (ETDEWEB)

    Toledo, T.F.; Ramanery, F.P.; Branco, J.R.T. [Fundacao Centro Tecnologico de Minas Gerais, Belo Horizonte, MG (Brazil)], e-mail: thalitaqui@yahoo.com.br; Cunha, M.A. [Acos Especiais Itabira S.A. (Acesita), Belo Horizonte, MG (Brazil)

    2006-07-01

    The interest for materials with new characteristics and properties made thin films an area of highest research interest. Silicon thin films have been widely used in solar cells, being the main active layer. In this work, the effect of deposition distance on thickness and microstructure of silicon films was investigated. The electron beam evaporation technique with argon plasma assistance was used to obtain films on stainless steel 304, Fe-Si alloy and soda lime glass. The experiments were made varying electron beam current and deposition pressure. The results are discussed based on Hertz-Knudsen's law and thin films microstructure evolution models. The samples were characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction and profilometer. (author)

  14. Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope

    International Nuclear Information System (INIS)

    Liu, Z.Q.; Mitsuishi, K.; Furuya, K.

    2005-01-01

    Attempts were made to fabricate three-dimensional nanostructures on and out of a substrate by electron-beam-induced deposition in a 200-kV scanning transmission electron microscope. Structures with parallel wires over the substrate surface were difficult to fabricate due to the direct deposition of wires on both top and bottom surfaces of the substrate. Within the penetration depth of the incident electron beam, nanotweezers were fabricated by moving the electron beam beyond different substrate layers. Combining the deposition of self-supporting wires and self-standing tips, complicated three-dimensional doll-like, flag-like, and gate-like nanostructures that extend out of the substrate were successfully fabricated with one-step or multi-step scans of the electron beam. Effects of coarsening, nucleation, and distortion during electron-beam-induced deposition are discussed. (orig.)

  15. High fluence deposition of polyethylene glycol films at 1064 nm by matrix assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Purice, Andreea; Schou, Jørgen; Kingshott, P.

    2007-01-01

    Matrix assisted pulsed laser evaporation (MAPLE) has been applied for deposition of thin polyethylene glycol (PEG) films with infrared laser light at 1064 nm. We have irradiated frozen targets (of 1 wt.% PEG dissolved in water) and measured the deposition rate in situ with a quartz crystal 2...... microbalance. The laser fluence needed to produce PEG films turned out to be unexpectedly high with a threshold of 9 J/cm(2) and the deposition rate was much lower than that with laser light at 355 nm. Results from matrix assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI......-TOF-MS) analysis demonstrate that the chemistry, molecular weight and polydispersity of the PEG films were identical to the starting material. Studies of the film surface with scanning electron microscopy (SEM) indicate that the Si-substrate is covered by a relatively homogenous PEG film with few bare spots. (c...

  16. Plasma-assisted molecular beam epitaxy of (11-22)-oriented 3-nitrides

    International Nuclear Information System (INIS)

    Lahourcade, L.

    2009-10-01

    This work reports on the molecular-beam epitaxial growth of (1122)-oriented semi-polar nitride semiconductors using m-sapphire substrates. The (1122) crystallographic orientation is predefined by AlN deposition on m-sapphire under N excess. On top of this AlN buffer layer, undoped or Si-doped two-dimensional GaN(1122) films are formed under Ga-rich conditions, with a stabilized Ga-excess ad-layer of about 1.05±0.10 ML. In contrast, Mg tends to segregate on the GaN surface, inhibiting the self-regulated Ga excess film. Nevertheless, uniform Mg incorporation can be obtained, and p-type conductivity was achieved. GaN/AlN quantum wells are synthesized by deposition of the binary compounds under the above-described conditions. In the case of GaN/AlN quantum dots, the three-dimensional transition is induced by a growth interruption under vacuum. The reduction of the internal electric field in GaN/AlN nano-structures is confirmed by the blue shift of the photoluminescence spectrum and by the short photoluminescence decay times measured at low temperature. These results are consistent with theoretical calculations of the electronic structure. (author)

  17. Adhesion-enhanced thick copper film deposition on aluminum oxide by an ion-beam-mixed Al seed layer

    International Nuclear Information System (INIS)

    Kim, Hyung-Jin; Park, Jae-Won

    2012-01-01

    We report a highly-adherent 30-μm Cu conductive-path coating on an aluminum-oxide layer anodized on an aluminum-alloy substrate for a metal-printed circuit-board application. A 50-nm Al layer was first coated with an e-beam evaporative deposition method on the anodized oxide, followed by ion bombardment to mix the interfacial region. Subsequently, a Cu coating was deposited onto the mixed seed layer to the designed thickness. Adhesions of the interface were tested by using tape adhesion test, and pull-off tests and showed commercially acceptable adhesions for such thick coating layers. The ion beam mixing (IBM) plays the role of fastening the thin seed coating layer to the substrate and enhancing the adhesion of the Cu conductive path on the anodized aluminum surface.

  18. Initial stages of the ion-beam assisted epitaxial GaN film growth on 6H-SiC(0001)

    International Nuclear Information System (INIS)

    Neumann, L.; Gerlach, J.W.; Rauschenbach, B.

    2012-01-01

    Ultra-thin gallium nitride (GaN) films were deposited using the ion-beam assisted molecular-beam epitaxy technique. The influence of the nitrogen ion to gallium atom flux ratio (I/A ratio) during the early stages of GaN nucleation and thin film growth directly, without a buffer layer on super-polished 6H-SiC(0001) substrates was studied. The deposition process was performed at a constant substrate temperature of 700 °C by evaporation of Ga and irradiation with hyperthermal nitrogen ions from a constricted glow-discharge ion source. The hyperthermal nitrogen ion flux was kept constant and the kinetic energy of the ions did not exceed 25 eV. The selection of different I/A ratios in the range from 0.8 to 3.2 was done by varying the Ga deposition rate between 5 × 10 13 and 2 × 10 14 at. cm −2 s −1 . The crystalline surface structure during the GaN growth was monitored in situ by reflection high-energy electron diffraction. The surface topography of the films as well as the morphology of separated GaN islands on the substrate surface was examined after film growth using a scanning tunneling microscope without interruption of ultra-high vacuum. The results show, that the I/A ratio has a major impact on the properties of the resulting ultra-thin GaN films. The growth mode, the surface roughness, the degree of GaN coverage of the substrate and the polytype mixture depend notably on the I/A ratio. - Highlights: ► Ultra-thin epitaxial GaN films prepared by hyperthermal ion-beam assisted deposition. ► Surface structure and topography studied during and after initial growth stages. ► Growth mode dependent on nitrogen ion to gallium atom flux ratio. ► Change from three-dimensional to two-dimensional growth for Ga-rich growth conditions.

  19. Self magnetic field effects on energy deposition by intense relativistic electron beams

    International Nuclear Information System (INIS)

    Nardi, E.; Peleg, E.; Zinamon, Z.

    1977-01-01

    The effect of the penetration of the self magnetic field of an intense relativsistic electron beam on the process of beam-target interaction is calculated. The diffusion of the magnetic field and the hydrodynamic expansion of the target are dynamically taken into account. It is found that at beam intensities of interest for pellet fusion considerable range shortening occurs by magnetic stopping. (author)

  20. Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

    Science.gov (United States)

    Donkov, N.; Mateev, E.; Safonov, V.; Zykova, A.; Yakovin, S.; Kolesnikov, D.; Sudzhanskaya, I.; Goncharov, I.; Georgieva, V.

    2014-12-01

    Ta2O5 ceramic coatings have been deposited on glass substrates by e-beam evaporation and magnetron sputtering methods. For the magnetron sputtering process Ta target was used. X-ray diffraction measurements show that these coatings are amorphous. XPS survey spectra of the ceramic Ta2O5 coatings were obtained. All spectra consist of well-defined XPS lines of Ta 4f, 4d, 4p and 4s; O 1s; C 1s. Ta 4f doublets are typical for Ta2O5 coatings with two main peaks. Scanning electron microscopy and atomic force microscopy images of the e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have revealed a relatively flat surface with no cracks. The dielectric properties of the tantalum pentoxide coatings have been investigated in the frequency range of 100 Hz to 1 MHz. The electrical behaviour of e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have also been compared. The deposition process conditions principally effect the structure parameters and electrical properties of Ta2O5 ceramic coatings. The coatings deposited by different methods demonstrate the range of dielectric parameters due to the structural and stoichiometric composition changes

  1. Study of nanocluster-assembled ZnO thin films by nanocluster-beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Zhiwei; Lei, Wei; Zhang, Xiaobing [School of Electronic Science and Engieering, Southeast University, Nanjing (China); Tay, Beng Kang [School of Electronical and Electronic Engineering, Nanyang Technological University, Nanyang (Singapore)

    2012-01-15

    Nanocluster-assembled ZnO thin films were obtained by nanocluster-beam deposition, in which nanoclusters were produced by a magnetron sputtering gas aggregation source. Two kinds of ZnO thin films were obtained using this method with the one grown under the on-line heating temperature of 700 C, and the other grown without on-line heating. Film microstructure and optical properties are investigated by various diagnostic techniques. It was found that both of film microstructure of ZnO thin films keep wurtzite structure as that of ZnO bulk materials. The averaged particle size for the film grown without on-line heating is around 6 nm, which is a little lower than that grown with the on-line heating. It was also found that as increasing the wavelength, both of the absorbance spectra for the films decrease sharply near ultra-visible to extend slowly to the visible and infrared wavelength range. For the film grown without on-line heating, the bandgap energy was estimated to 3.77 eV, while for the film grown with on-line heating, the bandgap energy was redshift to 3.71 eV. Similar behavior was also found for PL spectra analysis, where PL spectrum exhibited a peak centered at 3.31 eV without on-line heating, while it redshift to 3.20 eV with on-line heating. The mechanisms behind these behaviors were presented in this article. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. In situ analysis of thin film deposition processes using time-of-flight (TOF) ion beam analysis methods

    International Nuclear Information System (INIS)

    Im, J.; Lin, Y.; Schultz, J.A.; Auciello, O.H.; Chang, R.P.H.

    1995-05-01

    Non-destructive, in situ methods for characterization of thin film growth phenomena is key to understand thin film growth processes and to develop more reliable deposition procedures, especially for complex layered structures involving multi-phase materials. However, surface characterization methods that use either electrons (e.g. AES or XPS) or low energy ions (SIMS) require an UHV environment and utilize instrumentation which obstructs line of sight access to the substrate and are therefore incompatible with line of sight deposition methods and thin film deposition processes which introduce gas, either part of the deposition or in order to produce the desired phase. We have developed a means of differentially pumping both the ion beam source and detectors of a TOF ion beam surface analysis spectrometer that does not interfere with the deposition process and permits compositional and structural analysis of the growing film in the present system, at pressures up to several mTorr. Higher pressures are feasible with modified source-detector geometry. In order to quantify the sensitivity of Ion Scattering Spectroscopy (ISS) and Direct Recoil Spectroscopy (DRS), we have measured the signal intensity for stabilized clean metals in a variety of gas environments as a function of the ambient gas species and pressure, and ion beam species and kinetic energy. Results are interpreted in terms of collision cross sections which are compared with known gas phase scattering data and provide an apriori basis for the evaluation of time-of-flight ion scattering and recoil spectroscopies (ToF-ISARS) for various industrial processing environments which involve both inert and reactive cases. The cross section data for primary ion-gas molecule and recoiled atom-gas molecule interactions are also provided. from which the maximum operating pressure in any experimental configuration can be obtained

  3. Microwave plasma-assisted chemical vapor deposition of porous carbon film as supercapacitive electrodes

    Science.gov (United States)

    Wu, Ai-Min; Feng, Chen-Chen; Huang, Hao; Paredes Camacho, Ramon Alberto; Gao, Song; Lei, Ming-Kai; Cao, Guo-Zhong

    2017-07-01

    Highly porous carbon film (PCF) coated on nickel foam was prepared successfully by microwave plasma-assisted chemical vapor deposition (MPCVD) with C2H2 as carbon source and Ar as discharge gas. The PCF is uniform and dense with 3D-crosslinked nanoscale network structure possessing high degree of graphitization. When used as the electrode material in an electrochemical supercapacitor, the PCF samples verify their advantageous electrical conductivity, ion contact and electrochemical stability. The test results show that the sample prepared under 1000 W microwave power has good electrochemical performance. It displays the specific capacitance of 62.75 F/g at the current density of 2.0 A/g and retains 95% of its capacitance after 10,000 cycles at the current density of 2.0 A/g. Besides, its near-rectangular shape of the cyclic voltammograms (CV) curves exhibits typical character of an electric double-layer capacitor, which owns an enhanced ionic diffusion that can fit the requirements for energy storage applications.

  4. Water-assisted growth of graphene on carbon nanotubes by the chemical vapor deposition method.

    Science.gov (United States)

    Feng, Jian-Min; Dai, Ye-Jing

    2013-05-21

    Combining carbon nanotubes (CNTs) with graphene has been proved to be a feasible method for improving the performance of graphene for some practical applications. This paper reports a water-assisted route to grow graphene on CNTs from ferrocene and thiophene dissolved in ethanol by the chemical vapor deposition method in an argon flow. A double injection technique was used to separately inject ethanol solution and water for the preparation of graphene/CNTs. First, CNTs were prepared from ethanol solution and water. The injection of ethanol solution was suspended and water alone was injected into the reactor to etch the CNTs. Thereafter, ethanol solution was injected along with water, which is the key factor in obtaining graphene/CNTs. Transmission electron microscopy, scanning electron microscopy, X-ray diffraction, and Raman scattering analyses confirmed that the products were the hybrid materials of graphene/CNTs. X-ray photo-electron spectroscopy analysis showed the presence of oxygen rich functional groups on the surface of the graphene/CNTs. Given the activity of the graphene/CNT surface, CdS quantum dots adhered onto it uniformly through simple mechanical mixing.

  5. Ordered ZnO/AZO/PAM nanowire arrays prepared by seed-layer-assisted electrochemical deposition

    International Nuclear Information System (INIS)

    Shen, Yu-Min; Pan, Chih-Huang; Wang, Sheng-Chang; Huang, Jow-Lay

    2011-01-01

    An Al-doped ZnO (AZO) seed layer is prepared on the back side of a porous alumina membrane (PAM) substrate by spin coating followed by annealing in a vacuum at 400 °C. Zinc oxide in ordered arrays mediated by a high aspect ratio and an ordered pore array of AZO/PAM is synthesized. The ZnO nanowire array is prepared via a 3-electrode electrochemical deposition process using ZnSO 4 and H 2 O 2 solutions at a potential of − 1 V (versus saturated calomel electrode) and temperatures of 65 and 80 °C. The microstructure and chemical composition of the AZO seed layer and ZnO/AZO/PAM nanowire arrays are characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). Results indicate that the ZnO/AZO/PAM nanowire arrays were assembled in the nanochannel of the porous alumina template with diameters of 110–140 nm. The crystallinity of the ZnO nanowires depends on the AZO seed layer during the annealing process. The nucleation and growth process of ZnO/AZO/PAM nanowires are interpreted by the seed-layer-assisted growth mechanism.

  6. Template-assisted electrostatic spray deposition as a new route to mesoporous, macroporous, and hierarchically porous oxide films.

    Science.gov (United States)

    Sokolov, S; Paul, B; Ortel, E; Fischer, A; Kraehnert, R

    2011-03-01

    A novel film coating technique, template-assisted electrostatic spray deposition (TAESD), was developed for the synthesis of porous metal oxide films and tested on TiO(2). Organic templates are codeposited with the titania precursor by electrostatic spray deposition and then removed during calcination. Resultant films are highly porous with pores casted by uniformly sized templates, which introduced a new level of control over the pore morphology for the ESD method. Employing the amphiphilic block copolymer Pluronic P123, PMMA latex spheres, or a combination of the two, mesoporous, macroporous, and hierarchically porous TiO(2) films are obtained. Decoupled from other coating parameters, film thickness can be controlled by deposition time or depositing multiple layers while maintaining the coating's structure and integrity.

  7. A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques

    International Nuclear Information System (INIS)

    Mtangi, W.; Auret, F. D.; Janse van Rensburg, P. J.; Coelho, S. M. M.; Legodi, M. J.; Nel, J. M.; Meyer, W. E.; Chawanda, A.

    2011-01-01

    A systematic investigation to check the quality of Pd Schottky contacts deposited on ZnO has been performed on electron beam (e-beam) deposited and resistively/thermally evaporated samples using current-voltage, IV, and conventional deep level transient spectroscopy (DLTS) measurements. Room temperature IV measurements reveal the dominance of pure thermionic emission on the resistively evaporated contacts, while the e-beam deposited contacts show the dominance of generation recombination at low voltages, -10 A at a reverse voltage of 1.0 V whereas the e-beam deposited contacts have reverse currents of the order of 10 -6 A at 1.0 V. Average ideality factors have been determined as (1.43 ± 0.01) and (1.66 ± 0.02) for the resistively evaporated contacts and e-beam deposited contacts, respectively. The IV barrier heights have been calculated as (0.721 ± 0.002) eV and (0.624 ± 0.005) eV for the resistively evaporated and e-beam deposited contacts, respectively. Conventional DLTS measurements reveal the presence of three prominent defects in both the resistive and e-beam contacts. Two extra peaks with energy levels of 0.60 and 0.81 eV below the conduction band minimum have been observed in the e-beam deposited contacts. These have been explained as contributing to the generation recombination current that dominates at low voltages and high leakage currents. Based on the reverse current at 1.0 V, the degree of rectification, the dominant current transport mechanism and the observed defects, we conclude that the resistive evaporation technique yields better quality Schottky contacts for use in solar cells and ultraviolet detectors compared to the e-beam deposition technique. The 0.60 eV has been identified as possibly related to the unoccupied level for the doubly charged oxygen vacancy, V o 2+ .

  8. Simulation of the fluctuations of energy and charge deposited during e-beam exposure

    International Nuclear Information System (INIS)

    Borisov, S. S.; Zaitsev, S. I.; Grachev, E. A.

    2007-01-01

    The stochastic nature of an energy and charge deposition process is examined using a model based on discrete loss approximation (DLA). Deposited energy deviations computed using the continuous slowing down approximation (CSDA) and DLA are compared. It is shown that CSDA underestimates fluctuations in deposited energy

  9. High-rate deposition of photocatalytic TiO2 films by oxygen plasma assist reactive evaporation method

    International Nuclear Information System (INIS)

    Sakai, Tetsuya; Kuniyoshi, Yuji; Aoki, Wataru; Ezoe, Sho; Endo, Tatsuya; Hoshi, Yoichi

    2008-01-01

    High-rate deposition of titanium dioxide (TiO 2 ) film was attempted using oxygen plasma assisted reactive evaporation (OPARE) method. Photocatalytic properties of the film were investigated. During the deposition, the substrate temperature was fixed at 400 deg. C. The film deposition rate can be increased by increasing the supply of titanium atoms to the substrate, although oversupply of the titanium atoms causes oxygen deficiency in the films, which limits the deposition rate. The film structure depends strongly on the supply ratio of oxygen molecules to titanium atoms O 2 /Ti and changes from anatase to rutile structure as the O 2 /Ti supply ratio increased. Consequently, the maximum deposition rates of 77.0 nm min -1 and 145.0 nm min -1 were obtained, respectively, for the anatase and rutile film. Both films deposited at such high rates showed excellent hydrophilicity and organic decomposition performance. Even the film with rutile structure deposited at 145.0 nm min -1 had a contact angle of less than 2.5 deg. by UV irradiation for 5.0 h and an organics-decomposition performance index of 8.9 [μmol l -1 min -1 ] for methylene blue

  10. Uniform thin films of TiO2 nanoparticles deposited by matrix-assisted pulsed laser evaporation

    International Nuclear Information System (INIS)

    Caricato, A.P.; Manera, M.G.; Martino, M.; Rella, R.; Romano, F.; Spadavecchia, J.; Tunno, T.; Valerini, D.

    2007-01-01

    We report morphological and optical properties of a colloidal TiO 2 nanoparticle film, deposited on a quartz substrate by using the Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Atomic Force Microscopy demonstrated that a good uniformity of the deposition can be obtained. The presence of agglomerates with dimensions of about 1 μm in size was noticed. Form UV-vis transmission spectra, recorded in the 200-800 nm range, the optical constants and the energy gap were determined besides the film thickness. The optical constants resulted in agreement with the values reported in literature for TiO 2 nanoparticle thin films

  11. Nanoparticulate cerium dioxide and cerium dioxide-titanium dioxide composite thin films on glass by aerosol assisted chemical vapour deposition

    International Nuclear Information System (INIS)

    Qureshi, Uzma; Dunnill, Charles W.; Parkin, Ivan P.

    2009-01-01

    Two series of composite thin films were deposited on glass by aerosol assisted chemical vapour deposition (AACVD)-nanoparticulate cerium dioxide and nanoparticulate cerium dioxide embedded in a titanium dioxide matrix. The films were analysed by a range of techniques including UV-visible absorption spectroscopy, X-ray diffraction, scanning electron microscopy and energy dispersive analysis by X-rays. The AACVD prepared films showed the functional properties of photocatalysis and super-hydrophilicity. The CeO 2 nanoparticle thin films displaying photocatalysis and photo-induced hydrophilicity almost comparable to that of anatase titania.

  12. Electrochemically assisted co-deposition of calcium phosphate/collagen coatings on carbon/carbon composites

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Xueni [C/C Composites Technology Research Center, State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Hu Tao [C/C Composites Technology Research Center, State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Department of Cardiology, Xijing Hospital, Fourth Military Medical University, Xi' an, Shaanxi 710032 (China); Li Hejun, E-mail: lihejun@nwpu.edu.cn [C/C Composites Technology Research Center, State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Chen Mengdi; Cao Sheng; Zhang Leilei [C/C Composites Technology Research Center, State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Hou Xianghui [Department of Mechanical, Materials and Manufacturing Engineering, University of Nottingham, University Park, Nottingham NG7 2RD (United Kingdom)

    2011-02-01

    Calcium phosphate (CaP)/collagen coatings were prepared on the surface of carbon/carbon (C/C) composites by electrochemically assisted co-deposition technique. The effects of collagen concentration in the electrolyte on morphology, structure and composition of the coatings were systematically investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transformed infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS). The adhesive strength of the coatings was also evaluated by scratch tests and tensile bond tests. It was demonstrated that the coatings of three-dimensional collagen network structure was formed on the C/C composites from the electrolyte containing collagen. The surface of the collagen network was covered by uniform CaP aggregates. The coatings were actually composites of CaP and collagen. Hydroxyapatite (HA) was a favorable composition in the coatings with the increase of the collagen concentration in the electrolyte. The formed collagen network increased the cohesive and adhesive strength of the coatings. The adhesive strength between the coatings and substrates increased as the collagen concentration in the electrolyte increased. The coatings prepared at the collagen concentration of 500 mg/L in the electrolyte were not scraped off until the applied load reached 32.0 {+-} 2.2 N and the average tensile adhesive strength of the coatings was 4.83 {+-} 0.71 MPa. After C/C coated with composite coatings (500 mg/L) being immersed in a 10{sup -3} M Ca (OH){sub 2} solution at 30-33 deg. C for 96 h, nano-structured HA/collagen coatings similar to the natural human bone were obtained on the C/C.

  13. Fabrication of three-dimensional scaffolds using precision extrusion deposition with an assisted cooling device.

    Science.gov (United States)

    Hamid, Q; Snyder, J; Wang, C; Timmer, M; Hammer, J; Guceri, S; Sun, W

    2011-09-01

    In the field of biofabrication, tissue engineering and regenerative medicine, there are many methodologies to fabricate a building block (scaffold) which is unique to the target tissue or organ that facilitates cell growth, attachment, proliferation and/or differentiation. Currently, there are many techniques that fabricate three-dimensional scaffolds; however, there are advantages, limitations and specific tissue focuses of each fabrication technique. The focus of this initiative is to utilize an existing technique and expand the library of biomaterials which can be utilized to fabricate three-dimensional scaffolds rather than focusing on a new fabrication technique. An expanded library of biomaterials will enable the precision extrusion deposition (PED) device to construct three-dimensional scaffolds with enhanced biological, chemical and mechanical cues that will benefit tissue generation. Computer-aided motion and extrusion drive the PED to precisely fabricate micro-scaled scaffolds with biologically inspired, porosity, interconnectivity and internal and external architectures. The high printing resolution, precision and controllability of the PED allow for closer mimicry of tissues and organs. The PED expands its library of biopolymers by introducing an assisting cooling (AC) device which increases the working extrusion temperature from 120 to 250 °C. This paper investigates the PED with the integrated AC's capabilities to fabricate three-dimensional scaffolds that support cell growth, attachment and proliferation. Studies carried out in this paper utilized a biopolymer whose melting point is established to be 200 °C. This polymer was selected to illustrate the newly developed device's ability to fabricate three-dimensional scaffolds from a new library of biopolymers. Three-dimensional scaffolds fabricated with the integrated AC device should illustrate structural integrity and ability to support cell attachment and proliferation.

  14. Fabrication of three-dimensional scaffolds using precision extrusion deposition with an assisted cooling device

    Energy Technology Data Exchange (ETDEWEB)

    Hamid, Q; Snyder, J; Wang, C; Guceri, S; Sun, W [Department of Mechanical Engineering and Mechanics, Drexel University, Philadelphia, PA (United States); Timmer, M; Hammer, J, E-mail: sunwei@drexel.edu [Advanced Technologies and Regenerative Medicine, Somerville, NJ (United States)

    2011-09-15

    In the field of biofabrication, tissue engineering and regenerative medicine, there are many methodologies to fabricate a building block (scaffold) which is unique to the target tissue or organ that facilitates cell growth, attachment, proliferation and/or differentiation. Currently, there are many techniques that fabricate three-dimensional scaffolds; however, there are advantages, limitations and specific tissue focuses of each fabrication technique. The focus of this initiative is to utilize an existing technique and expand the library of biomaterials which can be utilized to fabricate three-dimensional scaffolds rather than focusing on a new fabrication technique. An expanded library of biomaterials will enable the precision extrusion deposition (PED) device to construct three-dimensional scaffolds with enhanced biological, chemical and mechanical cues that will benefit tissue generation. Computer-aided motion and extrusion drive the PED to precisely fabricate micro-scaled scaffolds with biologically inspired, porosity, interconnectivity and internal and external architectures. The high printing resolution, precision and controllability of the PED allow for closer mimicry of tissues and organs. The PED expands its library of biopolymers by introducing an assisting cooling (AC) device which increases the working extrusion temperature from 120 to 250 deg. C. This paper investigates the PED with the integrated AC's capabilities to fabricate three-dimensional scaffolds that support cell growth, attachment and proliferation. Studies carried out in this paper utilized a biopolymer whose melting point is established to be 200 deg. C. This polymer was selected to illustrate the newly developed device's ability to fabricate three-dimensional scaffolds from a new library of biopolymers. Three-dimensional scaffolds fabricated with the integrated AC device should illustrate structural integrity and ability to support cell attachment and proliferation.

  15. Fabrication of three-dimensional scaffolds using precision extrusion deposition with an assisted cooling device

    International Nuclear Information System (INIS)

    Hamid, Q; Snyder, J; Wang, C; Guceri, S; Sun, W; Timmer, M; Hammer, J

    2011-01-01

    In the field of biofabrication, tissue engineering and regenerative medicine, there are many methodologies to fabricate a building block (scaffold) which is unique to the target tissue or organ that facilitates cell growth, attachment, proliferation and/or differentiation. Currently, there are many techniques that fabricate three-dimensional scaffolds; however, there are advantages, limitations and specific tissue focuses of each fabrication technique. The focus of this initiative is to utilize an existing technique and expand the library of biomaterials which can be utilized to fabricate three-dimensional scaffolds rather than focusing on a new fabrication technique. An expanded library of biomaterials will enable the precision extrusion deposition (PED) device to construct three-dimensional scaffolds with enhanced biological, chemical and mechanical cues that will benefit tissue generation. Computer-aided motion and extrusion drive the PED to precisely fabricate micro-scaled scaffolds with biologically inspired, porosity, interconnectivity and internal and external architectures. The high printing resolution, precision and controllability of the PED allow for closer mimicry of tissues and organs. The PED expands its library of biopolymers by introducing an assisting cooling (AC) device which increases the working extrusion temperature from 120 to 250 deg. C. This paper investigates the PED with the integrated AC's capabilities to fabricate three-dimensional scaffolds that support cell growth, attachment and proliferation. Studies carried out in this paper utilized a biopolymer whose melting point is established to be 200 deg. C. This polymer was selected to illustrate the newly developed device's ability to fabricate three-dimensional scaffolds from a new library of biopolymers. Three-dimensional scaffolds fabricated with the integrated AC device should illustrate structural integrity and ability to support cell attachment and proliferation.

  16. Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure

    Czech Academy of Sciences Publication Activity Database

    Schäfer, J.; Fricke, K.; Mika, Filip; Pokorná, Zuzana; Zajíčková, L.; Foest, R.

    2017-01-01

    Roč. 630, MAY 30 (2017), s. 71-78 ISSN 0040-6090 R&D Projects: GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : plasma jet * liquid assisted plasma enhanced chemical * vapour deposition * silicon oxide Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Coating and films Impact factor: 1.879, year: 2016

  17. Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy

    NARCIS (Netherlands)

    Langereis, E.; Keijmel, J.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2008-01-01

    The surface groups created during plasma-assisted atomic layer deposition (ALD) of Al2O3 were studied by infrared spectroscopy. For temperatures in the range of 25–150 °C, –CH3 and –OH were unveiled as dominant surface groups after the Al(CH3)3precursor and O2 plasma half-cycles, respectively. At

  18. Local electrophoresis deposition assisted by laser trapping coupled with a spatial light modulator for three-dimensional microfabrication

    Science.gov (United States)

    Matsuura, Toshiki; Takai, Takanari; Iwata, Futoshi

    2017-10-01

    We describe a novel three-dimensional fabrication technique using local electrophoresis deposition assisted by laser trapping coupled with a spatial light modulator (SLM). In a solution containing nanometer-scale colloidal Au particles, multiple laser spots formed on a conductive substrate by the SLM gathered the nanoparticles together, and then the nanoparticles were electrophoretically deposited onto the substrate by an applied electrical field. However, undesirable sub-spots often appeared due to optical interference from the multiple laser spots, which deteriorated the accuracy of the deposition. To avoid the appearance of undesirable sub-spots, we proposed a method using quasi-multiple spots, which we realized by switching the position of a single spot briefly using the SLM. The method allowed us to deposit multiple dots on the substrate without undesirable sub-dot deposition. By moving the substrate downward during deposition, multiple micro-pillar structures could be fabricated. As a fabrication property, the dependence of the pillar diameter on laser intensity was investigated by changing the number of laser spots. The smallest diameter of the four pillars fabricated in this study was 920 nm at the laser intensity of 2.5 mW. To demonstrate the effectiveness of the method, multiple spiral structures were fabricated. Quadruple spirals of 46 µm in height were successfully fabricated with a growth rate of 0.21 µm/s using 2200 frames of the CGH patterns displayed in the SLM at a frame rate of 10 fps.

  19. Near-room temperature deposition of W and WO3 thin films by hydrogen atom assisted chemical vapor deposition

    International Nuclear Information System (INIS)

    Lee, W.W.; Reeves, R.R.

    1992-01-01

    A novel near-room temperatures CVD process has been developed using H-atoms reaction with WF 6 to produced tungsten and tungsten oxide films. The chemical, physical and electrical properties of these films were studied. Good adhesion and low resistivity of W films were measured. Conformal WO 3 films were obtained on columnar tungsten using a small amount of molecular oxygen in the gas stream. A reaction mechanism was evaluated on the basis of experimental results. The advantages of the method include deposition of adherent films in a plasma-free environment, near-room temperature, with a low level of impurity

  20. A new approach for 3D reconstruction from bright field TEM imaging: Beam precession assisted electron tomography

    International Nuclear Information System (INIS)

    Rebled, J.M.; Yedra, Ll.; Estrade, S.; Portillo, J.; Peiro, F.

    2011-01-01

    The successful combination of electron beam precession and bright field electron tomography for 3D reconstruction is reported. Beam precession is demonstrated to be a powerful technique to reduce the contrast artifacts due to diffraction and curvature in thin foils. Taking advantage of these benefits, Precession assisted electron tomography has been applied to reconstruct the morphology of Sn precipitates embedded in an Al matrix, from a tilt series acquired in a range from +49 o to -61 o at intervals of 2 o and with a precession angle of 0.6 o in bright field mode. The combination of electron tomography and beam precession in conventional TEM mode is proposed as an alternative procedure to obtain 3D reconstructions of nano-objects without a scanning system or a high angle annular dark field detector. -- Highlights: → Electron beam precession reduces spurious diffraction contrast in bright field mode. → Bend contour related contrast depends on precession angle. → Electron beam precession is combined with bright field electron tomography. → Precession assisted BF tomography allowed 3D reconstruction of a Sn precipitate.

  1. A new approach for 3D reconstruction from bright field TEM imaging: Beam precession assisted electron tomography

    Energy Technology Data Exchange (ETDEWEB)

    Rebled, J.M. [LENS-MIND-IN2UB, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Institut de Ciencia de Materials de Barcelona-CSIC, Campus UAB, 08193 Bellaterra (Spain); Yedra, Ll. [LENS-MIND-IN2UB, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Estrade, S.; Portillo, J. [LENS-MIND-IN2UB, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); TEM-MAT, CCiT-UB, Sole i Sabaris 1, 08028 Barcelona (Spain); Peiro, F., E-mail: francesca.peiro@ub.edu [LENS-MIND-IN2UB, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain)

    2011-08-15

    The successful combination of electron beam precession and bright field electron tomography for 3D reconstruction is reported. Beam precession is demonstrated to be a powerful technique to reduce the contrast artifacts due to diffraction and curvature in thin foils. Taking advantage of these benefits, Precession assisted electron tomography has been applied to reconstruct the morphology of Sn precipitates embedded in an Al matrix, from a tilt series acquired in a range from +49{sup o} to -61{sup o} at intervals of 2{sup o} and with a precession angle of 0.6{sup o} in bright field mode. The combination of electron tomography and beam precession in conventional TEM mode is proposed as an alternative procedure to obtain 3D reconstructions of nano-objects without a scanning system or a high angle annular dark field detector. -- Highlights: {yields} Electron beam precession reduces spurious diffraction contrast in bright field mode. {yields} Bend contour related contrast depends on precession angle. {yields} Electron beam precession is combined with bright field electron tomography. {yields} Precession assisted BF tomography allowed 3D reconstruction of a Sn precipitate.

  2. Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

    International Nuclear Information System (INIS)

    Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook

    2017-01-01

    Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

  3. Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook, E-mail: cwjeon@ynu.ac.kr

    2017-04-30

    Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

  4. Development of computer assisted learning program using cone beam projection for head radiography

    International Nuclear Information System (INIS)

    Nakazeko, Kazuma; Araki, Misao; Kajiwara, Hironori; Watanabe, Hiroyuki; Kuwayama, Jun; Karube, Shuhei; Hashimoto, Takeyuki; Shinohara, Hiroyuki

    2012-01-01

    We present a computer assisted learning (CAL) program to simulate head radiography. The program provides cone beam projections of a target volume, simulating three-dimensional computed tomography (CT) of a head phantom. The generated image is 512 x 512 x 512 pixels with each pixel 0.6 mm on a side. The imaging geometry, such as X-ray tube orientation and phantom orientation, can be varied. The graphical user interface (GUI) of the CAL program allows the study of the effects of varying the imaging geometry; each simulated projection image is shown quickly in an adjoining window. Simulated images with an assigned geometry were compared with the image obtained using the standard geometry in clinical use. The accuracy of the simulated image was verified through comparison with the image acquired using radiography of the head phantom, subsequently processed with a computed radiography system (CR image). Based on correlation coefficient analysis and visual assessment, it was concluded that the CAL program can satisfactorily simulate the CR image. Therefore, it should be useful for the training of head radiography. (author)

  5. Customized atomic force microscopy probe by focused-ion-beam-assisted tip transfer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Andrew; Butte, Manish J., E-mail: manish.butte@stanford.edu [Department of Pediatrics, Division of Immunology, Allergy and Rheumatology, Stanford University, Stanford, California 94305 (United States)

    2014-08-04

    We present a technique for transferring separately fabricated tips onto tipless atomic force microscopy (AFM) cantilevers, performed using focused ion beam-assisted nanomanipulation. This method addresses the need in scanning probe microscopy for certain tip geometries that cannot be achieved by conventional lithography. For example, in probing complex layered materials or tall biological cells using AFM, a tall tip with a high-aspect-ratio is required to avoid artifacts caused by collisions of the tip's sides with the material being probed. We show experimentally that tall (18 μm) cantilever tips fabricated by this approach reduce squeeze-film damping, which fits predictions from hydrodynamic theory, and results in an increased quality factor (Q) of the fundamental flexural mode. We demonstrate that a customized tip's well-defined geometry, tall tip height, and aspect ratio enable improved measurement of elastic moduli by allowing access to low-laying portions of tall cells (T lymphocytes). This technique can be generally used to attach tips to any micromechanical device when conventional lithography of tips cannot be accomplished.

  6. Real-time kinetic modeling of YSZ thin film roughness deposited by e-beam evaporation technique

    International Nuclear Information System (INIS)

    Galdikas, A.; Cerapaite-Trusinskiene, R.; Laukaitis, G.; Dudonis, J.

    2008-01-01

    In the present study, the process of yttrium-stabilized zirconia (YSZ) thin films deposition on optical quartz (SiO 2 ) substrates using e-beam deposition technique controlling electron gun power is analyzed. It was found that electron gun power influences the non-monotonous kinetics of YSZ film surface roughness. The evolution of YSZ thin film surface roughness was analyzed by a kinetic model. The model is based on the rate equations and includes processes of surface diffusion of the adatoms and the clusters, nucleation, growth and coalescence of islands in the case of thin film growth in Volmer-Weber mode. The analysis of the experimental results done by modeling explains non-monotonous kinetics and dependence of the surface roughness on the electron gun power. A good quantitative agreement with experimental results is obtained taking into account the initial roughness of the substrate surface and the amount of the clusters in the flux of evaporated material.

  7. Oxidation of nanostructured Ti films produced by low energy cluster beam deposition: An X-ray Photoelectron Spectroscopy characterization

    International Nuclear Information System (INIS)

    Simone, Monica de; Snidero, Elena; Coreno, Marcello; Bongiorno, Gero; Giorgetti, Luca; Amati, Matteo; Cepek, Cinzia

    2012-01-01

    We used in-situ X-ray Photoelectron Spectroscopy (XPS) to study the oxidation process of a cluster-assembled metallic titanium film exposed to molecular oxygen at room temperature. The nanostructured film has been grown on a Si(111) substrate, in ultra high vacuum conditions, by coupling a supersonic cluster beam deposition system with an XPS experimental chamber. Our results show that upon in-situ oxygen exposure Ti 3+ is the first oxidation state observed, followed by Ti 4+ , whereas Ti 2+ is practically absent during the whole process. Our results compare well with the existing literature on Ti films produced using other techniques.

  8. Preparation and characterization of nanocrystalline ITO thin films on glass and clay substrates by ion-beam sputter deposition method

    International Nuclear Information System (INIS)

    Venkatachalam, S.; Nanjo, H.; Kawasaki, K.; Wakui, Y.; Hayashi, H.; Ebina, T.

    2011-01-01

    Nanocrystalline indium tin oxide (ITO) thin films were prepared on clay-1 (Clay-TPP-LP-SA), clay-2 (Clay-TPP-SA) and glass substrates using ion-beam sputter deposition method. X-ray diffraction (XRD) patterns showed that the as-deposited ITO films on both clay-1 and clay-2 substrates were a mixture of amorphous and polycrystalline. But the as-deposited ITO films on glass substrates were polycrystalline. The surface morphologies of as-deposited ITO/glass has smooth surface; in contrast, ITO/clay-1 has rough surface. The surface roughnesses of ITO thin films on glass and clay-1 substrate were calculated as 4.3 and 83 nm, respectively. From the AFM and SEM analyses, the particle sizes of nanocrystalline ITO for a film thickness of 712 nm were calculated as 19.5 and 20 nm, respectively. Optical study showed that the optical transmittance of ITO/clay-2 was higher than that of ITO/clay-1. The sheet resistances of as-deposited ITO/clay-1 and ITO/clay-2 were calculated as 76.0 and 63.0 Ω/□, respectively. The figure of merit value for as-deposited ITO/clay-2 (12.70 x 10 -3 /Ω) was also higher than that of ITO/clay-1 (9.6 x 10 -3 /Ω), respectively. The flexibilities of ITO/clay-1 and ITO/clay-2 were evaluated as 13 and 12 mm, respectively. However, the ITO-coated clay-2 substrate showed much better optical and electrical properties as well as flexibility as compared to clay-1.

  9. Launch and capture of a single particle in a pulse-laser-assisted dual-beam fiber-optic trap

    Science.gov (United States)

    Fu, Zhenhai; She, Xuan; Li, Nan; Hu, Huizhu

    2018-06-01

    The rapid loading and manipulation of microspheres in optical trap is important for its applications in optomechanics and precision force sensing. We investigate the microsphere behavior under coaction of a dual-beam fiber-optic trap and a pulse laser beam, which reveals a launched microsphere can be effectively captured in a spatial region. A suitable order of pulse duration for launch is derived according to the calculated detachment energy threshold of pulse laser. Furthermore, we illustrate the effect of structural parameters on the launching process, including the spot size of pulse laser, the vertical displacement of beam waist and the initial position of microsphere. Our result will be instructive in the optimal design of the pulse-laser-assisted optical tweezers for controllable loading mechanism of optical trap.

  10. Spatio-selective surface modification of glass assisted by laser-induced deposition of gold nanoparticles

    International Nuclear Information System (INIS)

    Takahashi, Hironobu; Niidome, Yasuro; Hisanabe, Hideyuki; Kuroiwa, Keita; Kimizuka, Nobuo; Yamada, Sunao

    2006-01-01

    Using pulsed laser irradiation (532 nm), dodecanethiol-capped gold nanoparticles (DT-Au) were deposited on the laser-irradiated region of a hydrophobic glass substrate modified with dimethyloctadecylchlorosilane (DMOS). After removal of deposited DT-Au, the laser-deposited region on the substrate was hydrophilic, as verified by static water contact angles. X-ray photoelectron spectroscopy suggested that the naked glass surface was not exposed at the hydrophilic region. Immersion of the substrate into gold nanorod (NR) solution selectively immobilized NRs on the hydrophilic surface via electrostatic interactions, indicating that the hydrophilic region was an anionic surface. From these results, it is expected that some immobilized DMOS groups on the laser-irradiated region of the substrate were oxidized during DT-Au deposition and fragmentation of the deposited DT-Au

  11. Reduced thermal budget processing of Y-Ba-Cu-O films by rapid isothermal processing assisted metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Singh, R.; Sinha, S.; Hsu, N.J.; Ng, J.T.C.; Chou, P.; Thakur, R.P.S.; Narayan, J.

    1991-01-01

    Metalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a viable technique to fabricate ribbons, tapes, coated wires, and the deposition of films of high-temperature superconductors, and related materials. As a reduced thermal budget processing technique, rapid isothermal processing (RIP) based on incoherent radiation as the source of energy can be usefully coupled to conventional MOCVD. In this paper we report on the deposition and characterization of high quality superconducting thin films of Y-Ba-Cu-O (YBCO) on yttrium stabilized zirconia substrates by RIP assisted MOCVD. Using O 2 gas as the source of oxygen, YBCO films deposited initially at 600 degree C for 1 min and at 745 degree C for 25 min followed by deposition at 780 degree C for 45 s are primarily c-axis oriented and zero resistance is observed at 89--90 K. The zero magnetic field current density at 53 and 77 K are 1.2x10 6 and 3x10 5 A/cm 2 , respectively. By using a mixture of N 2 O and O 2 as the oxygen source substrate temperature was further reduced in the deposition of YBCO films. The films deposited initially at 600 degree C for 1 min and than at 720 degree C for 30 min are c-axis oriented and with zero resistance being observed at 91 K. The zero magnetic field current densities at 53 and 77 K are 3.4x10 6 and 1.2x10 6 A/cm 2 , respectively. To the best of our knowledge this is the highest value of critical current density, J c for films deposited by MOCVD at a substrate temperature as low as 720 degree C. It is envisioned that high energy photons from the incoherent light source and the use of a mixture of N 2 O and O 2 as the oxygen source, assist chemical reactions and lower overall thermal budget for processing of these films

  12. Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

    International Nuclear Information System (INIS)

    Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

    2012-01-01

    This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

  13. Nanoparticle-Assisted Diffusion Brazing of Metal Microchannel Arrays: Nanoparticle Synthesis, Deposition, and Characterization

    Science.gov (United States)

    Eluri, Ravindranadh T.

    Microchannel process technology (MPT) offers several advantages to the field of nanomanufacturing: 1) improved process control over very short time intervals owing to shorter diffusional distances; and 2) reduced reactor size due to high surface area to volume ratios and enhanced heat and mass transfer. The objective of this thesis was to consider how nanomaterials, produced in part using MPT, could be used to solve problems associated with the fabrication of MPT devices. Specifically, many MPT devices are produced using transient liquid-phase brazing involving an electroplated interlayer consisting of a brazing alloy designed for melting temperature suppression. Unfortunately, these alloys can form brittle secondary phases which significantly reduce bond strength. In contrast, prior efforts have shown that it is possible to leverage the size-dependent properties of nanomaterials to suppress brazing temperatures. In this prior work, thin films of off-the-shelf elemental nanoparticles were used as interlayers yielding joints with improved mechanical properties. In the present investigation, efforts have been made to characterize the synthesis and deposition of various elemental nanoparticle suspensions for use in the transient liquid-phase brazing of aluminum and stainless steel. Advances were used to demonstrate the nanoparticle-assisted diffusion brazing of a microchannel array. In the first section, a silver nanoparticle (AgNP) interlayer was produced for the diffusion brazing of heat exchanger aluminum. Efforts are made to examine the effect of braze filler particle size (˜5 nm and ˜50 nm) and processing parameters (heating rate: 5ºC/min and 25ºC/min; brazing temperature: 550ºC and 570ºC) on thin coupons of diffusion-brazed 3003 Al. A tensile strength of 69.7 MPa was achieved for a sample brazed at 570°C for 30 min under 1 MPa with an interlayer thickness of approximately 7 microm. Further suppression of the brazing temperature to 500ºC was achieved by

  14. The rf-power dependences of the deposition rate, the hardness and the corrosion-resistance of the chromium nitride film deposited by using a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Lim, Jongmin; Lee, Chongmu

    2006-01-01

    The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and possibly causes cancer in humans. Therefore, it is indispensable to develop an alternative deposition technique. Dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrN x deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-power were investigated to see the feasibility of sputtering as an alternative technique for chromium plating. The dual ion beam sputtering system used in this study was designed in such a way as the primary argon ion beam and the secondary nitrogen ion beam are injected toward the target and the substrate, respectively so that the chromium atoms at the chromium target surface may not nearly react with nitrogen atoms. The hardness and the surface roughness were measured by a micro-Vicker's hardness tester and an atomic force microscope (AFM), respectively. X-ray diffraction analyses were performed to identify phases in the films. The deposition rate of CrN x depends more strongly upon the rf-power for argon ion beam than that for nitrogen ion beam. The hardness of the CrN x film is highest when the volume percent of the Cr 2 N phase in the film is highest. Amorphous films are obtained when the rf-power for nitrogen ion beam is much higher than that for argon ion beam. The CrN x film deposited by using the sputtering technique under the optimal condition provides corrosion-resistance comparable to that of the electroplated chromium

  15. Investigation of the physical properties of ion assisted ZrN thin films deposited by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Signore, M A; Valerini, D; Rizzo, A; Tapfer, L; Capodieci, L; Cappello, A

    2010-01-01

    Ion bombardment during thin film growth is known to cause structural and morphological changes in the deposited films, thus affecting their physical properties. In this work zirconium nitride films have been deposited by the ion assisted magnetron sputtering technique. The ion energy is controlled by varying the voltage applied to the substrate in the range 0-25 V. The deposited ZrN films are characterized for their structure, surface roughness, oxygen contamination, optical reflectance and electrical resistivity. With increasing substrate voltage crystallinity of the films is enhanced with a preferential orientation of the ZrN grains having the (1 1 1) axis perpendicular to the substrate surface. At the same time, a decrease in electrical resistivity and oxygen contamination content is observed up to 20 V. A higher substrate voltage (25 V) causes an inversion in the observed experimental trends. The role of oxygen contamination decrease and generation of nitrogen vacancies due to ionic assistance have been considered as a possible explanation for the experimental results.

  16. Investigation of the physical properties of ion assisted ZrN thin films deposited by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Signore, M A; Valerini, D; Rizzo, A; Tapfer, L; Capodieci, L; Cappello, A [ENEA, Department of Physical Technologies and New Materials, SS7, Appia, km 706, 72100 Brindisi (Italy)

    2010-06-09

    Ion bombardment during thin film growth is known to cause structural and morphological changes in the deposited films, thus affecting their physical properties. In this work zirconium nitride films have been deposited by the ion assisted magnetron sputtering technique. The ion energy is controlled by varying the voltage applied to the substrate in the range 0-25 V. The deposited ZrN films are characterized for their structure, surface roughness, oxygen contamination, optical reflectance and electrical resistivity. With increasing substrate voltage crystallinity of the films is enhanced with a preferential orientation of the ZrN grains having the (1 1 1) axis perpendicular to the substrate surface. At the same time, a decrease in electrical resistivity and oxygen contamination content is observed up to 20 V. A higher substrate voltage (25 V) causes an inversion in the observed experimental trends. The role of oxygen contamination decrease and generation of nitrogen vacancies due to ionic assistance have been considered as a possible explanation for the experimental results.

  17. High-throughput shadow mask printing of passive electrical components on paper by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Caruso, Francesco; Bellacicca, Andrea; Milani, Paolo, E-mail: pmilani@mi.infn.it [CIMaINa and Dipartimento di Fisica, Università degli Studi di Milano, Via Celoria 16, 20133 Milano (Italy)

    2016-04-18

    We report the rapid prototyping of passive electrical components (resistors and capacitors) on plain paper by an additive and parallel technology consisting of supersonic cluster beam deposition (SCBD) coupled with shadow mask printing. Cluster-assembled films have a growth mechanism substantially different from that of atom-assembled ones providing the possibility of a fine tuning of their electrical conduction properties around the percolative conduction threshold. Exploiting the precise control on cluster beam intensity and shape typical of SCBD, we produced, in a one-step process, batches of resistors with resistance values spanning a range of two orders of magnitude. Parallel plate capacitors with paper as the dielectric medium were also produced with capacitance in the range of tens of picofarads. Compared to standard deposition technologies, SCBD allows for a very efficient use of raw materials and the rapid production of components with different shape and dimensions while controlling independently the electrical characteristics. Discrete electrical components produced by SCBD are very robust against deformation and bending, and they can be easily assembled to build circuits with desired characteristics. The availability of large batches of these components enables the rapid and cheap prototyping and integration of electrical components on paper as building blocks of more complex systems.

  18. Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

    Science.gov (United States)

    Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

    2013-09-01

    Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

  19. Large area ion and plasma beam sources

    Energy Technology Data Exchange (ETDEWEB)

    Waldorf, J. [IPT Ionen- und Plasmatech. GmbH, Kaiserslautern (Germany)

    1996-06-01

    In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.).

  20. Large area ion and plasma beam sources

    International Nuclear Information System (INIS)

    Waldorf, J.

    1996-01-01

    In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.)

  1. Investigation of chemical vapour deposition diamond detectors by X-ray micro-beam induced current and X-ray micro-beam induced luminescence techniques

    International Nuclear Information System (INIS)

    Olivero, P.; Manfredotti, C.; Vittone, E.; Fizzotti, F.; Paolini, C.; Lo Giudice, A.; Barrett, R.; Tucoulou, R.

    2004-01-01

    Tracking detectors have become an important ingredient in high-energy physics experiments. In order to survive the harsh detection environment of the large hadron collider (LHC), trackers need to have special properties. They must be radiation hard, provide fast collection of charge, be as thin as possible and remove heat from readout electronics. The unique properties of diamond allow it to fulfill these requirements. In this work we present an investigation of the charge transport and luminescence properties of 'detector grade' artificial chemical vapour deposition (CVD) diamond devices developed within the CERN RD42 collaboration, performed by means of X-ray micro-beam induced current collection (XBICC) and X-ray micro-beam induced luminescence (XBIL) techniques. XBICC technique allows quantitative estimates of the transport parameters of the material to be evaluated and mapped with micrometric spatial resolution. In particular, the high resolution and sensitivity of the technique has allowed a quantitative study of the inhomogeneity of the charge transport parameter defined as the product of mobility and lifetime for both electron and holes. XBIL represents a technique complementary to ion beam induced luminescence (IBIL), which has already been used by our group, since X-ray energy loss profile in the material is different from that of MeV ions. X-ray induced luminescence maps have been performed simultaneously with induced photocurrent maps, to correlate charge transport and induced luminescence properties of diamond. Simultaneous XBICC and XBIL maps exhibit features of partial complementarity that have been interpreted on the basis of considerations on radiative and non-radiative recombination processes which compete with charge transport efficiency

  2. Development of Functional Surfaces on High-Density Polyethylene (HDPE) via Gas-Assisted Etching (GAE) Using Focused Ion Beams.

    Science.gov (United States)

    Sezen, Meltem; Bakan, Feray

    2015-12-01

    Irradiation damage, caused by the use of beams in electron and ion microscopes, leads to undesired physical/chemical material property changes or uncontrollable modification of structures. Particularly, soft matter such as polymers or biological materials is highly susceptible and very much prone to react on electron/ion beam irradiation. Nevertheless, it is possible to turn degradation-dependent physical/chemical changes from negative to positive use when materials are intentionally exposed to beams. Especially, controllable surface modification allows tuning of surface properties for targeted purposes and thus provides the use of ultimate materials and their systems at the micro/nanoscale for creating functional surfaces. In this work, XeF2 and I2 gases were used in the focused ion beam scanning electron microscope instrument in combination with gallium ion etching of high-density polyethylene surfaces with different beam currents and accordingly different gas exposure times resulting at the same ion dose to optimize and develop new polymer surface properties and to create functional polymer surfaces. Alterations in the surface morphologies and surface chemistry due to gas-assisted etching-based nanostructuring with various processing parameters were tracked using high-resolution SEM imaging, complementary energy-dispersive spectroscopic analyses, and atomic force microscopic investigations.

  3. Distribution of Energy Deposited in Plastic Tubing and Copper-Wire Insulation by Electron Beam Irradiation

    DEFF Research Database (Denmark)

    Pedersen, Walther Batsberg; Miller, Arne; Pejtersen, K.

    1978-01-01

    chloride insulation. Radiochromic dye films equivalent to the insulating materials were used as accurate dosimeters having a response independent of dose rate. Irradiations were in various geometries, wire and plastic thicknesses, positions along the beam scan, and with different backing materials near...

  4. Evaluation of Beam Loss and Energy Depositions for a Possible Phase II Design for LHC Collimation

    International Nuclear Information System (INIS)

    Lari, L.; Assmann, R.; Bracco, C.; Brugger, M.; Cerutti, F.; Doyle, E.; Ferrari, A.; Keller, L.; Lundgren, S.; Markiewicz, Thomas W.; Mauri, M.; Redaelli, S.; Sarchiapone, L.; Smith, J.; Vlachoudis, V.; Weiler, T.

    2011-01-01

    The LHC beams are designed to have high stability and to be stored for many hours. The nominal beam intensity lifetime is expected to be of the order of 20h. The Phase II collimation system has to be able to handle particle losses in stable physics conditions at 7 TeV in order to avoid beam aborts and to allow correction of parameters and restoration to nominal conditions. Monte Carlo simulations are needed in order to evaluate the behavior of metallic high-Z collimators during operation scenarios using a realistic distribution of losses, which is a mix of the three limiting halo cases. Moreover, the consequences in the IR7 insertion of the worst (case) abnormal beam loss are evaluated. The case refers to a spontaneous trigger of the horizontal extraction kicker at top energy, when Phase II collimators are used. These studies are an important input for engineering design of the collimation Phase II system and for the evaluation of their effect on adjacent components. The goal is to build collimators that can survive the expected conditions during LHC stable physics runs, in order to avoid quenches of the SC magnets and to protect other LHC equipments.

  5. Evaluation of Beam Losses And Energy Deposition for a Possible Phase II Design for LHC Collimation

    International Nuclear Information System (INIS)

    Lari, L.; Bracco, C.; Assmann, R.W.; Brugger, M.; Cerutti, F.; Ferrari, A.; Mauri, M.; Redaelli, S.; Sarchiapone, L.; Vlachoudis, V.; Weiler, T.; Doyle, J.E.; Keller, L.; Lundgren, S.A.; Markiewicz, T.W.; Smith, J.C.

    2011-01-01

    The Large Hadron Collider (LHC) beams are designed to have high stability and to be stored for many hours. The nominal beam intensity lifetime is expected to be of the order of 20h. The Phase II collimation system has to be able to handle particle losses in stable physics conditions at 7 TeV in order to avoid beam aborts and to allow correction of parameters and restoration to nominal conditions. Monte Carlo simulations are needed in order to evaluate the behavior of metallic high-Z collimators during operation scenarios using a realistic distribution of losses, which is a mix of the three limiting halo cases. Moreover, the consequences in the IR7 insertion of the worst (case) abnormal beam loss are evaluated. The case refers to a spontaneous trigger of the horizontal extraction kicker at top energy, when Phase II collimators are used. These studies are an important input for engineering design of the collimation Phase II system and for the evaluation of their effect on adjacent components. The goal is to build collimators that can survive the expected conditions during LHC stable physics runs, in order to avoid quenches of the SC magnets and to protect other LHC equipments.

  6. Organic Thin Films Deposited by Emulsion-Based, Resonant Infrared, Matrix-Assisted Pulsed Laser Evaporation: Fundamentals and Applications

    Science.gov (United States)

    Ge, Wangyao

    Thin film deposition techniques are indispensable to the development of modern technologies as thin film based optical coatings, optoelectronic devices, sensors, and biological implants are the building blocks of many complicated technologies, and their performance heavily depends on the applied deposition technique. Particularly, the emergence of novel solution-processed materials, such as soft organic molecules, inorganic compounds and colloidal nanoparticles, facilitates the development of flexible and printed electronics that are inexpensive, light weight, green and smart, and these thin film devices represent future trends for new technologies. One appealing feature of solution-processed materials is that they can be deposited into thin films using solution-processed deposition techniques that are straightforward, inexpensive, high throughput and advantageous to industrialize thin film based devices. However, solution-processed techniques rely on wet deposition, which has limitations in certain applications, such as multi-layered film deposition of similar materials and blended film deposition of dissimilar materials. These limitations cannot be addressed by traditional, vacuum-based deposition techniques because these dry approaches are often too energetic and can degrade soft materials, such as polymers, such that the performance of resulting thin film based devices is compromised. The work presented in this dissertation explores a novel thin film deposition technique, namely emulsion-based, resonant infrared, matrix-assisted pulsed laser evaporation (RIR-MAPLE), which combines characteristics of wet and dry deposition techniques for solution-processed materials. Previous studies have demonstrated the feasibility of emulsion-based RIR-MAPLE to deposit uniform and continuous organic, nanoparticle and blended films, as well as hetero-structures that otherwise are difficult to achieve. However, fundamental understanding of the growth mechanisms that govern

  7. Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications

    NARCIS (Netherlands)

    Hoogeland, D.; Jinesh, K.B.; Roozeboom, F.; Besling, W.F.A.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2009-01-01

    By employing plasma-assisted atomic layer deposition, thin films of Al2O3 and TiN are subsequently deposited in a single reactor at a single substrate temperature with the objective of fabricating high-quality TiN/Al2O3 / p-Si metal-oxide-semiconductor capacitors. Transmission electron microscopy

  8. Influence of substrate temperature and annealing on structural and optical properties of TiO{sub 2} films deposited by reactive e-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Pjević, D., E-mail: dejanp@vinca.rs [VINČA Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Marinković, T.; Savić, J.; Bundaleski, N.; Obradović, M.; Milosavljević, M. [VINČA Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Kulik, M. [Frank Laboratory of Neutron Physics, JINR, Joliot-Curie St. 6, Dubna 141980, Moscow Region (Russian Federation)

    2015-09-30

    The influence of deposition and post-deposition annealing parameters on the structure and optical properties of TiO{sub 2} thin films synthesized by reactive e-beam evaporation is reported. Pure Ti (99.9%) was evaporated in oxygen atmosphere to form thin films on Si (100) and glass substrates. Depositions were conducted on substrates held at room temperature and at 200–400 °C heated substrates. Post-deposition annealing was done for 3 h at 500 °C in air. Compositional and structural studies were performed by Rutherford backscattering spectrometry, X-ray diffraction, and X-ray photoelectron spectroscopy, and optical properties were studied by ultraviolet–visible spectroscopy and analytically by pointwise unconstrained minimization approach method. It was found that both the structure and optical properties of the films are strongly influenced by the deposition and processing parameters. All deposited samples showed good stoichiometry of Ti:O ~ 1:2. Depending on the substrate temperature and oxygen pressure in the chamber during the deposition, anatase–rutile mixed films were obtained, and in some cases TiO and Ti{sub 2}O{sub 3} phases were observed. Substrate deposition temperature appears to play the major role on the final structure of the films, while post-deposition annealing adds up for the lack of oxygen in some cases and invokes crystal grain growth of already initiated phases. The results can be interesting towards the development of TiO{sub 2} thin films with defined structure and optical properties. - Highlights: • TiO{sub 2} films were deposited by reactive e-beam evaporation. • Structure and properties were studied as a function of deposition temperature. • Stoichiometry of as-deposited films was Ti:O ~ 1:2, containing different Ti-O phases. • Post-deposition annealing yielded phase transformation, affecting the properties. • Refractive index increases with the substrate deposition temperature.

  9. Pulse-reverse electrodeposition for mesoporous metal films: combination of hydrogen evolution assisted deposition and electrochemical dealloying.

    Science.gov (United States)

    Cherevko, Serhiy; Kulyk, Nadiia; Chung, Chan-Hwa

    2012-01-21

    Hydrogen evolution assisted electrodeposition is a new bottom-up technique allowing the fast and simple synthesis of nanometals. Electrochemical dealloying is a top-down approach with the same purpose. In this work, we show that a combination of these two methods in sequence by pulse-reverse electrodeposition can be used to prepare high-surface-area nanostructured metals. Highly porous adherent platinum is obtained by the deposition of CuPt alloy during the cathodic cycles and the selective dissolution of copper during the anodic cycles. The convection created by the movement of the hydrogen bubbles increases the deposition rate and removes the dissolved copper ions from the diffusion layer, which ensures the deposition of a film with the same stoichiometry throughout the whole process. Due to the relatively high ratio of copper atoms on the surface in the as-deposited layer, it is proposed that the dealloying kinetics is significantly higher than that usually observed during the dealloying process in a model system. The proposed approach has several advantages over other methods, such as a very high growth rate and needlessness of any post-treatment processes. A detailed analysis of the effect of pulse-reverse waveform parameters on the properties of the films is presented. Mesoporous platinum with pores and ligaments having characteristic sizes of less than 10 nm, an equivalent surface area of up to ca. 220 m(2) cm(-3), and a roughness factor of more than 1000 is fabricated.

  10. Study of titania nanorod films deposited by matrix-assisted pulsed laser evaporation as a function of laser fluence

    Science.gov (United States)

    Caricato, A. P.; Belviso, M. R.; Catalano, M.; Cesaria, M.; Cozzoli, P. D.; Luches, A.; Manera, M. G.; Martino, M.; Rella, R.; Taurino, A.

    2011-11-01

    Chemically synthesized brookite titanium dioxide (TiO2) nanorods with average diameter and length dimensions of 3-4 nm and 35-50 nm, respectively, were deposited by the matrix-assisted pulsed laser evaporation technique. A toluene nanorod solution was frozen at the liquid-nitrogen temperature and irradiated with a KrF excimer laser ( λ=248 nm, τ=20 ns) at the repetition rate of 10 Hz, at different fluences (25 to 350 mJ/cm2). The deposited films were structurally characterized by high-resolution scanning and transmission electron microscopy. single-crystal Si wafers and carbon-coated Cu grids were used as substrates. Structural analyses evidenced the occurrence of brookite-phase crystalline nanospheres coexisting with individually distinguishable TiO2 nanorods in the films deposited at fluences varying from 50 to 350 mJ/cm2. Nanostructured TiO2 films comprising only nanorods were deposited by lowering the laser fluence to 25 mJ/cm2. The observed shape and phase transitions of the nanorods are discussed taking into account the laser-induced heating effects, reduced melting temperature and size-dependent thermodynamic stability of nanoscale TiO2.

  11. Transforming a Simple Commercial Glue into Highly Robust Superhydrophobic Surfaces via Aerosol-Assisted Chemical Vapor Deposition.

    Science.gov (United States)

    Zhuang, Aoyun; Liao, Ruijin; Lu, Yao; Dixon, Sebastian C; Jiamprasertboon, Arreerat; Chen, Faze; Sathasivam, Sanjayan; Parkin, Ivan P; Carmalt, Claire J

    2017-12-06

    Robust superhydrophobic surfaces were synthesized as composites of the widely commercially available adhesives epoxy resin (EP) and polydimethylsiloxane (PDMS). The EP layer provided a strongly adhered micro/nanoscale structure on the substrates, while the PDMS was used as a post-treatment to lower the surface energy. In this study, the depositions of EP films were taken at a range of temperatures, deposition times, and substrates via aerosol-assisted chemical vapor deposition (AACVD). A novel dynamic deposition temperature approach was developed to create multiple-layered periodic micro/nanostructures that significantly improved the surface mechanical durability. Water droplet contact angles (CA) of 160° were observed with droplet sliding angles (SA) frequently UV testing (365 nm, 3.7 mW/cm 2 , 120 h) were carried out to exhibit the environmental stability of the films. Self-cleaning behavior was demonstrated in clearing the surfaces of various contaminating powders and aqueous dyes. This facile and flexible method for fabricating highly durable superhydrophobic polymer films points to a promising future for AACVD in their scalable and low-cost production.

  12. Metal-insulator transition in Pt-C nanowires grown by focused-ion-beam-induced deposition

    International Nuclear Information System (INIS)

    Fernandez-Pacheco, A.; Ibarra, M. R.; De Teresa, J. M.; Cordoba, R.

    2009-01-01

    We present a study of the transport properties of Pt-C nanowires created by focused-ion-beam (FIB)-induced deposition. By means of the measurement of the resistance while the deposit is being performed, we observe a progressive decrease in the nanowire resistivity with thickness, changing from 10 8 μΩ cm for thickness ∼20 nm to a lowest saturated value of 700 μΩ cm for thickness >150 nm. Spectroscopy analysis indicates that this dependence on thickness is caused by a gradient in the metal-carbon ratio as the deposit is grown. We have fabricated nanowires in different ranges of resistivity and studied their conduction mechanism as a function of temperature. A metal-insulator transition as a function of the nanowire thickness is observed. The results will be discussed in terms of the Mott-Anderson theory for noncrystalline materials. An exponential decrease in the conductance with the electric field is found for the most resistive samples, a phenomenon understood by the theory of hopping in lightly doped semiconductors under strong electric fields. This work explains the important discrepancies found in the literature for Pt-C nanostructures grown by FIB and opens the possibility to tune the transport properties of this material by an appropriate selection of the growth parameters.

  13. Deposition of matrix-free fullerene films with improved morphology by matrix-assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Canulescu, Stela; Schou, Jørgen; Fæster, Søren

    2013-01-01

    Thin films of C60 were deposited by matrix-assisted pulsed laser evaporation (MAPLE) from a frozen target of anisole with 0.67 wt% C60. Above a fluence of 1.5 J/cm2 the C60 films are strongly non-uniform and are resulting from transfer of matrix-droplets containing fullerenes. At low fluence...... the fullerene molecules in the films are intact, the surface morphology is substantially improved and there are no measurable traces of the matrix molecules in the film. This may indicate a regime of dominant evaporation at low fluence which merges into the MAPLE regime of liquid ejection of the host matrix...

  14. TiCN thin films grown by reactive crossed beam pulsed laser deposition

    Science.gov (United States)

    Escobar-Alarcón, L.; Camps, E.; Romero, S.; Muhl, S.; Camps, I.; Haro-Poniatowski, E.

    2010-12-01

    In this work, we used a crossed plasma configuration where the ablation of two different targets in a reactive atmosphere was performed to prepare nanocrystalline thin films of ternary compounds. In order to assess this alternative deposition configuration, titanium carbonitride (TiCN) thin films were deposited. Two crossed plasmas were produced by simultaneously ablating titanium and graphite targets in an Ar/N2 atmosphere. Films were deposited at room temperature onto Si (100) and AISI 4140 steel substrates whilst keeping the ablation conditions of the Ti target constant. By varying the laser fluence on the carbon target it was possible to study the effect of the carbon plasma on the characteristics of the deposited TiCN films. The structure and composition of the films were analyzed by X-ray Diffraction, Raman Spectroscopy and non-Rutherford Backscattering Spectroscopy. The hardness and elastic modulus of the films was also measured by nanoindentation. In general, the experimental results showed that the TiCN thin films were highly oriented in the (111) crystallographic direction with crystallite sizes as small as 6.0 nm. It was found that the hardness increased as the laser fluence was increased, reaching a maximum value of about 33 GPa and an elastic modulus of 244 GPa. With the proposed configuration, the carbon content could be easily varied from 42 to 5 at.% by changing the laser fluence on the carbon target.

  15. Effect of laser beam parameters on magnetic properties of Nd-Fe-B thick-film magnets fabricated by pulsed laser deposition

    International Nuclear Information System (INIS)

    Fukunaga, H.; Nakano, M.; Yanai, T.; Kamikawatoko, T.; Yamashita, F.

    2011-01-01

    The effects of varying the laser power and the spot diameter of a laser beam on the magnetic properties, morphology, and deposition rate of Nd-Fe-B thick-film magnets fabricated by pulsed laser deposition (PLD) were investigated. Reducing the laser fluence on the target reduces the remanence and increases the Nd content and consequently the coercivity of the prepared films. The spot size of the laser beam was found to affect the film surface morphology, the deposition rate, and the reproducibility of the magnetic properties of the prepared films. Reducing the spot size reduces the number of droplets and the reproducibility of the magnetic properties and increases the droplet size. Controlling the spot size of the laser beam enabled us to maximize the deposition rate. Consequently, a coercivity of 1210 kA/m and a remanence of 0.51 T were obtained at a deposition rate of 11.8 μm/(h·W). This deposition rate is 30% greater than the highest previously reported deposition rate by PLD.

  16. Understanding the electron-stimulated surface reactions of organometallic complexes to enable design of precursors for electron beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Spencer, Julie A.; Rosenberg, Samantha G.; Barclay, Michael; Fairbrother, D. Howard [Johns Hopkins University, Department of Chemistry, Baltimore, MD (United States); Wu, Yung-Chien; McElwee-White, Lisa [University of Florida, Department of Chemistry, Gainesville, FL (United States)

    2014-12-15

    Standard practice in electron beam-induced deposition (EBID) is to use precursors designed for thermal processes, such as chemical vapor deposition (CVD). However, organometallic precursors that yield pure metal deposits in CVD often create EBID deposits with high levels of organic contamination. This contamination negatively impacts the deposit's properties (e.g., by increasing resistivity or decreasing catalytic activity) and severely limits the range of potential applications for metal-containing EBID nanostructures. To provide the information needed for the rational design of precursors specifically for EBID, we have employed an ultra-high vacuum (UHV) surface science approach to identify the elementary reactions of organometallic precursors during EBID. These UHV studies have demonstrated that the initial electron-induced deposition of the surface-bound organometallic precursors proceeds through desorption of one or more of the ligands present in the parent compound. In specific cases, this deposition step has been shown to proceed via dissociative electron attachment, involving low-energy secondary electrons generated by the interaction of the primary beam with the substrate. Electron beam processing of the surface-bound species produced in the initial deposition event usually causes decomposition of the residual ligands, creating nonvolatile fragments. This process is believed to be responsible for a significant fraction of the organic contaminants typically observed in EBID nanostructures. A few ligands (e.g., halogens) can, however, desorb during electron beam processing while other ligands (e.g., PF{sub 3}, CO) can thermally desorb if elevated substrate temperatures are used during deposition. Using these general guidelines for reactivity, we propose some design strategies for EBID precursors. The ultimate goal is to minimize organic contamination and thus overcome the key bottleneck for fabrication of relatively pure EBID nanostructures. (orig.)

  17. 1-D Van der Waals Foams Heated by Ion Beam Energy Deposition

    International Nuclear Information System (INIS)

    Zylstra, A.B.; Barnard, J.J.; More, R.M.

    2009-01-01

    One dimensional simulations of various initial average density aluminum foams (modeled as slabs of solid metal separated by low density regions) heated by volumetric energy deposition are conducted with a Lagrangian hydrodynamics code using a van der Waals equation of tate (EOS). The resulting behavior is studied to facilitate the design of future warm dense matter (WDM) experiments at LBNL. In the simulations the energy deposition ranges from 10 to 30 kJ/g and from 0.075 to 4.0 ns total pulse length, resulting in temperatures from approximately 1 o 4 eV. We study peak pressures and temperatures in the foams, expansion velocity, and the phase evolution. Five relevant time scales in the problem are identified. Additionally, we present a method for characterizing the level of inhomogeneity in a foam target as it is heated and the time it takes for a foam to homogenize.

  18. Computer simulation of scattered ion and sputtered species effects in ion beam sputter-deposition of high temperature superconducting thin films

    International Nuclear Information System (INIS)

    Krauss, A.R.; Auciello, O.

    1992-01-01

    Ion beam sputter-deposition is a technique currently used by many groups to produce single and multicomponent thin films. This technique provides several advantages over other deposition methods, which include the capability for yielding higher film density, accurate stoichiometry control, and smooth surfaces. However, the relatively high kinetic energies associated with ion beam sputtering also lead to difficulties if the process is not properly controlled. Computer simulations have been performed to determine net deposition rates, as well as the secondary erosion, lattice damage, and gas implantation in the films, associated with primary ions scattered from elemental Y, Ba and Cu targets used to produce high temperature superconducting Y-Ba-Cu-O films. The simulations were performed using the TRIM code for different ion masses and kinetic energies, and different deposition geometries. Results are presented for primary beams of Ar + , Kr + and Xe + incident on Ba and Cu targets at 0 degrees and 45 degrees with respect to the surface normal, with the substrate positioned at 0 degrees and 45 degrees. The calculations indicate that the target composition, mass and kinetic energy of the primary beam, angle of incidence on the target, and position and orientation of the substrate affect the film damage and trapped primary beam gas by up to 5 orders of magnitude

  19. Quantitative analysis of gold nanorod alignment after electric field assisted deposition

    NARCIS (Netherlands)

    Ahmed, W.; Ahmed, Waqqar; Kooij, Ernst S.; van Silfhout, Arend; Poelsema, Bene

    2009-01-01

    We have studied the alignment of colloidal gold nanorods, deposited from solution onto well-defined substrates in the presence of an AC electric field generated by micrometer spaced electrodes. The field strengths employed in our experiments are sufficiently large to overcome Brownian motion and

  20. Structural and composition investigations at delayered locations of low k integrated circuit device by gas-assisted focused ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dandan, E-mail: dandan.wang@globalfoundries.com; Kee Tan, Pik; Yamin Huang, Maggie; Lam, Jeffrey; Mai, Zhihong [Technology Development Department, GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (Singapore)

    2014-05-15

    The authors report a new delayering technique – gas-assisted focused ion beam (FIB) method and its effects on the top layer materials of integrated circuit (IC) device. It demonstrates a highly efficient failure analysis with investigations on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive x-ray spectroscopy and Fourier transform infrared analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB delayering open up a new insight avenue for the failure analysis in IC devices.

  1. Direct fabrication of a W-C SNS Josephson junction using focused-ion-beam chemical vapour deposition

    International Nuclear Information System (INIS)

    Dai, Jun; Kometani, Reo; Ishihara, Sunao; Warisawa, Shin’ichi; Onomitsu, Koji; Krockenberger, Yoshiharu; Yamaguchi, Hiroshi

    2014-01-01

    A tungsten-carbide (W-C) superconductor/normal metal/superconductor (SNS) Josephson junction has been fabricated using focused-ion-beam chemical vapour deposition (FIB-CVD). Under certain process conditions, the component ratio has been tuned from W: C: Ga = 26%: 66%: 8% in the superconducting wires to W: C: Ga = 14%: 79%: 7% in the metallic junction. The critical current density at 2.5 K in the SNS Josephson junction is 1/3 of that in W-C superconducting nanowire. Also, a Fraunhofer-like oscillation of critical current in the junction with four periods is observed. FIB-CVD opens avenues for novel functional superconducting nanodevices. (paper)

  2. Preparation and electrical properties of boron and boron phosphide films obtained by gas source molecular beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kumashiro, Y.; Yokoyama, T.; Sakamoto, T.; Fujita, T. [Yokohama National Univ. (Japan)

    1997-10-01

    Boron and boron phosphide films were prepared by gas source molecular beam deposition on sapphire crystal at various substrate temperatures up to 800{degrees}C using cracked B{sub 2}H{sub 6} (2% in H{sub 2}) at 300{degrees}C and cracked PH{sub 3} (20% in H{sub 2}) at 900{degrees}C. The substrate temperatures and gas flow rates of the reactant gases determined the film growth. The boron films with amorphous structure are p type. Increasing growth times lead to increasing mobilities and decreasing carrier concentrations. Boron phosphide film with maximum P/B ratio is obtained at a substrate temperature of 600{degrees}C, below and above which they become phosphorous deficient due to insufficient supply of phosphorus and thermal desorption of the phosphorus as P{sub 2}, respectively, but they are all n type conductors due to phosphorus vacancies.

  3. Comparative study of LaNiO$_3$/LaAlO$_3$ heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

    OpenAIRE

    Wrobel, F.; Mark, A. F.; Christiani, G.; Sigle, W.; Habermeier, H. -U.; van Aken, P. A.; Logvenov, G.; Keimer, B.; Benckiser, E.

    2017-01-01

    Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity, microstructure as revealed by high-resolution transmission electron microscopy images and resistiv...

  4. Wear resistance increase of the modified coatings, deposited in the beam of relativistic electrons

    International Nuclear Information System (INIS)

    Poletika, I.M.; Perovskaya, M.V.; Balushkina, M.A.

    2015-01-01

    The 1.5-3 mm thickness coatings have been obtained by vacuum - free electron beam cladding of tungsten carbide on low - carbon steel sub state. The coatings have an increased hardness but low wear resistance. Adding both nickel and titanium carbide to the tungsten carbide results in essentially improving the wear resistance of the coatings due to austenite-promoting effect of nickel and precipitation of fine Tic particles resulting in the formation of the final and nano grain structure. In the layer of weld one can find 30-100 nm grain - size structures. (authors)

  5. Spray deposition inside tree canopies from a newly developed variable-rate air assisted sprayer

    Science.gov (United States)

    Conventional spray applications in orchards and ornamental nurseries are not target-oriented, resulting in significant waste of pesticides and contamination of the environment. To address this problem, a variable-rate air-assisted sprayer implementing laser scanning technology was developed to apply...

  6. Ion beam modification of structural and optical properties of GeO2 thin films deposited at various substrate temperatures using pulsed laser deposition

    Science.gov (United States)

    Rathore, Mahendra Singh; Vinod, Arun; Angalakurthi, Rambabu; Pathak, A. P.; Singh, Fouran; Thatikonda, Santhosh Kumar; Nelamarri, Srinivasa Rao

    2017-11-01

    High energy heavy ion irradiation-induced modification of high quality crystalline GeO2 thin films grown at different substrate temperatures ranging from 100 to 500 °C using pulsed laser deposition has been investigated. The pristine films were irradiated with 100 MeV Ag7+ ions at fixed fluence of 1 × 1013 ions/cm2. These pristine and irradiated films have been characterized using X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared and photoluminescence spectroscopy. The XRD and Raman results of pristine films confirm the formation of hexagonal structure of GeO2 films, whereas the irradiation eliminates all the peaks except major GeO2 peak of (101) plane. It is evident from the XRD results that crystallite size changes with substrate temperature and SHI irradiation. The surface morphology of films was studied by AFM. The functional group of pristine and irradiated films was investigated by IR transmission spectra. Pristine films exhibited strong photoluminescence around 342 and 470 nm due to oxygen defects and a red shift in the PL bands is observed after irradiation. Possible mechanism of tuning structural and optical properties of pristine as well as irradiated GeO2 films with substrate temperature and ion beam irradiation has been reported in detail.

  7. Deposition of organic dyes for dye-sensitized solar cell by using matrix-assisted pulsed laser evaporation

    Directory of Open Access Journals (Sweden)

    Chih-Ping Yen

    2016-08-01

    Full Text Available The deposition of various distinct organic dyes, including ruthenium complex N3, melanin nanoparticle (MNP, and porphyrin-based donor-π-acceptor dye YD2-o-C8, by using matrix-assisted pulsed laser evaporation (MAPLE for application to dye-sensitized solar cell (DSSC is investigated systematically. It is found that the two covalently-bonded organic molecules, i.e., MNP and YD2-o-C8, can be transferred from the frozen target to the substrate with maintained molecular integrity. In contrast, N3 disintegrates in the process, presumably due to the lower bonding strength of metal complex compared to covalent bond. With the method, DSSC using YD2-o-C8 is fabricated, and an energy conversion efficiency of 1.47% is attained. The issue of the low penetration depth of dyes deposited by MAPLE and the possible resolution to it are studied. This work demonstrates that MAPLE could be an alternative way for deposition of organic dyes for DSSC.

  8. Deposition of organic dyes for dye-sensitized solar cell by using matrix-assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Yen, Chih-Ping [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Yu, Pin-Feng [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Department of Physics, National Chung Cheng University, Chiayi 621, Taiwan (China); Wang, Jyhpyng [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Department of Physics, National Central University, Taoyuan 320, Taiwan (China); Lin, Jiunn-Yuan [Department of Physics, National Chung Cheng University, Chiayi 621, Taiwan (China); Chen, Yen-Mu [SuperbIN Co., Ltd., Taipei 114, Taiwan (China); Chen, Szu-yuan, E-mail: sychen@ltl.iams.sinica.edu.tw [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Department of Physics, National Central University, Taoyuan 320, Taiwan (China)

    2016-08-15

    The deposition of various distinct organic dyes, including ruthenium complex N3, melanin nanoparticle (MNP), and porphyrin-based donor-π-acceptor dye YD2-o-C8, by using matrix-assisted pulsed laser evaporation (MAPLE) for application to dye-sensitized solar cell (DSSC) is investigated systematically. It is found that the two covalently-bonded organic molecules, i.e., MNP and YD2-o-C8, can be transferred from the frozen target to the substrate with maintained molecular integrity. In contrast, N3 disintegrates in the process, presumably due to the lower bonding strength of metal complex compared to covalent bond. With the method, DSSC using YD2-o-C8 is fabricated, and an energy conversion efficiency of 1.47% is attained. The issue of the low penetration depth of dyes deposited by MAPLE and the possible resolution to it are studied. This work demonstrates that MAPLE could be an alternative way for deposition of organic dyes for DSSC.

  9. Thin films of thermoelectric compound Mg2Sn deposited by co-sputtering assisted by multi-dipolar microwave plasma

    International Nuclear Information System (INIS)

    Le-Quoc, H.; Lacoste, A.; Hlil, E.K.; Bes, A.; Vinh, T. Tan; Fruchart, D.; Skryabina, N.

    2011-01-01

    Highlights: → Mg 2 Sn thin films deposited by plasma co-sputtering, on silicon and glass substrates. → Formation of nano-grained polycrystalline films on substrates at room temperature. → Structural properties vary with target biasing and target-substrate distance. → Formation of the hexagonal phase of Mg 2 Sn in certain deposition conditions. → Power factor ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn films doped with ∼1 at.% Ag. - Abstract: Magnesium stannide (Mg 2 Sn) thin films doped with Ag intended for thermoelectric applications are deposited on both silicon and glass substrates at room temperature by plasma assisted co-sputtering. Characterization by scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction confirms the formation of fine-grained polycrystalline thin films with thickness of 1-3 μm. Stoichiometry, microstructure and crystal structure of thin films are found to vary with target biasing and the distance from targets to substrate. Measurements of electrical resistivity and Seebeck coefficient at room temperature show the maximum power factor of ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn thin films doped with ∼1 at.% Ag.

  10. Vertical Growth of Superconducting Crystalline Hollow Nanowires by He+ Focused Ion Beam Induced Deposition.

    Science.gov (United States)

    Córdoba, Rosa; Ibarra, Alfonso; Mailly, Dominique; De Teresa, José Ma

    2018-02-14

    Novel physical properties appear when the size of a superconductor is reduced to the nanoscale, in the range of its superconducting coherence length (ξ 0 ). Such nanosuperconductors are being investigated for potential applications in nanoelectronics and quantum computing. The design of three-dimensional nanosuperconductors allows one to conceive novel schemes for such applications. Here, we report for the first time the use of a He + focused-ion-beam-microscope in combination with the W(CO) 6 precursor to grow three-dimensional superconducting hollow nanowires as small as 32 nm in diameter and with an aspect ratio (length/diameter) of as much as 200. Such extreme resolution is achieved by using a small He + beam spot of 1 nm for the growth of the nanowires. As shown by transmission electron microscopy, they display grains of large size fitting with face-centered cubic WC 1-x phase. The nanowires, which are grown vertically to the substrate, are felled on the substrate by means of a nanomanipulator for their electrical characterization. They become superconducting at 6.4 K and show large critical magnetic field and critical current density resulting from their quasi-one-dimensional superconducting character. These results pave the way for future nanoelectronic devices based on three-dimensional nanosuperconductors.

  11. FCC-hh final-focus for flat-beams: parameters and energy deposition studies

    CERN Document Server

    AUTHOR|(CDS)2081283; Cruz Alaniz, Emilia; Seryi, Andrei; Van Riesen-Haupt, Leon; Besana, Maria Ilaria

    2017-01-01

    The international Future Circular Collider (FCC) study comprises the study of a new scientific structure in a tunnel of 100 km. This will allow the installation of two accelerators, a 45.6–175 GeV lepton collider and a 100-TeV hadron collider. An optimized design of a final-focus system for the hadron collider is presented here. The new design is more compact and enables unequal ${\\beta}$$^{∗}$ in both planes, whose choice is justified here. This is followed by energy deposition studies, where the total dose in the magnets as a consequence of the collision debris is evaluated.

  12. Study of Sb/SnO{sub 2} bi-layer films prepared by ion beam sputtering deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chun-Min [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Chun-Chieh [Department of Electrical Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung 833, Taiwan, ROC (China); Kuo, Jui-Chao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Jow-Lay, E-mail: jlh888@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

    2014-11-03

    In the present work, bi-layer thin films of Sb/SnO{sub 2} were produced on unheated glass substrates using ion beam sputtering (IBS) technique without post annealing treatment. The thickness of Sb layers was varied from 2 to 10 nm and the Sb layers were deposited on SnO{sub 2} layers having thicknesses of 40 nm to 115 nm. The effect of thickness was studied on the morphological, electrical and optical properties. The Sb/SnO{sub 2} bi-layer resulted in lowering the electrical resistivity as well as reducing the optical transmittance. However, the optical and electrical properties of the bi-layer films were mainly influenced by the thickness of Sb layers due to progressive transfer in structures from aggregate to continuous films. The bi-layer films show the electrical resistivity of 1.4 × 10{sup −3} Ω cm and an optical transmittance of 26% for Sb film having 10 nm thickness. - Highlights: • Bi-layer Sb/SnO{sub 2} structures were synthesized by ion beam sputtering (IBS) technique. • The 6 nm-thick Sb film is a transition region in this study. • The conductivity of the bi-layer films is increased as Sb thickness increases. • The transmittance of the bi-layer films is decreased as Sb thickness increases.

  13. Experimental Setup for Ultrasonic-Assisted Desktop Fused Deposition Modeling System

    OpenAIRE

    Maidin, S.; Muhamad, M. K.; Pei, Eujin

    2014-01-01

    Fused deposition modeling (FDM) is an additive manufacturing (AM) process that has been used in various manufacturing fields. However, the drawback of FDM is poor surface finish of part produced, leading to surface roughness and requires hand finishing. In this study, ultrasonic technology will be integrated into a desktop FDM system. Ultrasound has been applied in various conventional machining process and shows good machined surface finish. However, very little research regarding the applic...

  14. Enhancement of the optical and electrical properties of ITO thin films deposited by electron beam evaporation technique

    Science.gov (United States)

    Ali, H. M.; Mohamed, H. A.; Mohamed, S. H.

    2005-08-01

    Indium tin oxide (ITO) is widely utilized in numerous industrial applications due to its unique combined properties of transparency to visible light and electrical conductivity. ITO films were deposited on glass substrates by an electron beam evaporation technique at room temperature from bulk samples, with different thicknesses. The film with 1500 Å thick was selected to perform annealing in the temperature range of 200 400 °C and annealing for varying times from 15 to 120 min at 400 °C. The X-ray diffraction of the films was analyzed in order to investigate its dependence on thickness, and annealing. Electrical and optical measurements were also carried out. Transmittance, optical energy gap, refractive index, carrier concentration, thermal emissivity and resistivity were investigated. It was found that the as-deposited films with different thicknesses were highly absorbing and have relatively poor electrical properties. The films become opaque with increasing the film thickness. After thermal annealing, the resistance decreases and a simultaneous variation in the optical transmission occurs. A transmittance value of 85.5% in the IR region and 82% in the visible region of the spectrum and a resistivity of 2.8 × 10-4 Ω Cm were obtained at annealing temperature of 400 °C for 120 min.

  15. Optimization of the LHC interaction region with respect to beam-induced energy deposition

    International Nuclear Information System (INIS)

    Mokhov, N.V.; Strait, J.B.

    1996-06-01

    Energy deposition in the superconducting magnets by particles from p- p collisions is a significant challenge for the design of the LHC high luminosity insertions. We have studies the dependence of the energy deposition on the apertures and strengths of insertion magnets and on the placement of absorbers in front of and within the quadrupoles. Monte Carlo simulations were made using the code DTUJET to generate 7x7 TeV p-p events and the code MARS to follow hadronic and electromagnetic cascades induced in the insertion components. The 3D geometry and magnetic field descriptions of the LHC-4.1 lattice were used. With a quadrupole coil aperture ≥70 mm, absorbers can be placed within the magnet bore which reduce the peak power density, at full luminosity, below 0.5 mW/g, a level that should allow the magnets to operate at their design field. The total heat load can be removed by a cooling system similar to that used in the main magnets

  16. Thermal shock behavior of platinum aluminide bond coat/electron beam-physical vapor deposited thermal barrier coatings

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhenhua, E-mail: zhxuciac@163.com [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Dai, Jianwei [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Niu, Jing [Shenyang Liming Aero-engine (Group) Corporation Ltd., Institute of Metallurgical Technology, Technical Center, Shengyang 110043 (China); Li, Na; Huang, Guanghong; He, Limin [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China)

    2014-12-25

    Highlights: • TBCs of (Ni, Pt)Al bond coat with grit blasting process and YSZ ceramic coating. • Grain boundary ridges are the sites for spallation damage initiation in TBCs. • Ridges removed, cavities formation appeared and the damage initiation deteriorated. • Damage initiation and progression at interface lead to a buckling failure. - Abstract: Thermal barrier coating systems (TBCs) including of chemical vapor deposited (Ni, Pt)Al bond coat with grit blasting process and electron beam physical vapor deposited Y{sub 2}O{sub 3}-stabilized-ZrO{sub 2} (YSZ) ceramic coating were investigated. The phase structures, surface and cross-sectional morphologies, thermal shock behaviors and residual stresses of the coatings were studied in detail. Grain boundary ridges still remain on the surface of bond coat prior to the deposition of the ceramic coating, which are shown to be the major sites for spallation damage initiation in TBCs. When these ridges are mostly removed, they appear some of cavities formation and then the damage initiation mode is deteriorated. Damage initiation and progression occurs at the bond coat to thermally grown oxide (TGO) interface leading to a buckling failure behavior. A buckle failure once started may be arrested when it runs into a region of high bond coat to TGO interface toughness. Thus, complete failure requires further loss in toughness of the bond coat to TGO interface during cooling. The suppressed cavities formation, the removed ridges at the grain boundaries, the relative high TGO to bond coat interface toughness, the uniform growth behavior of TGO thickening and the lower of the residual stress are the primary factors for prolonging the lifetime of TBCs.

  17. Thin film deposition and characterization of pure and iron-doped electron-beam evaporated tungsten oxide for gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Tesfamichael, Tuquabo, E-mail: t.tesfamichael@qut.edu.a [Faculty of Built Environment and Engineering, School of Engineering Systems, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Arita, Masashi [Graduate School of Information Science and Technology, Hokkaido University, Kita-14, Nishi-9, Kita-ku, Sapporo, 060-0814 (Japan); Bostrom, Thor [Faculty of Science and Technology, School of Physical and Chemical Sciences, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Bell, John [Centre for Built Environment and Engineering Research, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia)

    2010-06-30

    Pure tungsten oxide (WO{sub 3}) and iron-doped (10 at.%) tungsten oxide (WO{sub 3}:Fe) nanostructured thin films were prepared using a dual crucible Electron Beam Evaporation (EBE) technique. The films were deposited at room temperature under high vacuum onto glass as well as alumina substrates and post-heat treated at 300 {sup o}C for 1 h. Using Raman spectroscopy the as-deposited WO{sub 3} and WO{sub 3}:Fe films were found to be amorphous, however their crystallinity increased after annealing. The estimated surface roughness of the films was similar (of the order of 3 nm) to that determined using Atomic Force Microscopy (AFM). As observed by AFM, the WO{sub 3}:Fe film appeared to have a more compact surface as compared to the more porous WO{sub 3} film. X-ray photoelectron spectroscopy analysis showed that the elemental stoichiometry of the tungsten oxide films was consistent with WO{sub 3}. A slight difference in optical band gap energies was found between the as-deposited WO{sub 3} (3.22 eV) and WO{sub 3}:Fe (3.12 eV) films. The differences in the band gap energies of the annealed films were significantly higher, having values of 3.12 eV and 2.61 eV for the WO{sub 3} and WO{sub 3}:Fe films respectively. The heat treated films were investigated for gas sensing applications using noise spectroscopy. It was found that doping of Fe to WO{sub 3} produced gas selectivity but a reduced gas sensitivity as compared to the WO{sub 3} sensor.

  18. Effect of accelerated electron beams on technological properties of ferriquarzites of the Mikhajlovskij ore deposit

    International Nuclear Information System (INIS)

    Potapov, S.A.; Chakturiya, V.A.; Polyakov, V.A.; Rostovtsev, V.I.

    1989-01-01

    Method for enrichment of ferruginous quartzites of the Kursk magnetic anomaly, using electron irradiation was tested. Samples were irradiated by 2 MeV accelerated electron beam from IZU-6 industrial accelerator. The absorbed dose was equal to 0.14; 0.40; 0.75 Mrad for different types of quartzites. It is shown that sample irradiation elevates grindability of ferrugineous quartzites of all technological types. Enrichment factors increase. Iron extraction to concentrate grows. Extraction of easily enriched ores increases after irradiation by 2.86 %, quality - by 0.6 %; for oxidized ferruginous quartzites - 3.7 % and 1.5 % respectively. Productivity of grinding process increases 1.8-1.3 times. The described technique is promising and should be introduced possibility of elevating grinding productivity 2.0-2.2 times with increase of technological indices of magnetic separation by 2.5-4.0 % when using more powerful accelerators was established

  19. Numerical simulations of energy deposition caused by 50 MeV—50 TeV proton beams in copper and graphite targets

    Science.gov (United States)

    Nie, Y.; Schmidt, R.; Chetvertkova, V.; Rosell-Tarragó, G.; Burkart, F.; Wollmann, D.

    2017-08-01

    The conceptual design of the Future Circular Collider (FCC) is being carried out actively in an international collaboration hosted by CERN, for the post-Large Hadron Collider (LHC) era. The target center-of-mass energy of proton-proton collisions for the FCC is 100 TeV, nearly an order of magnitude higher than for LHC. The existing CERN accelerators will be used to prepare the beams for FCC. Concerning beam-related machine protection of the whole accelerator chain, it is critical to assess the consequences of beam impact on various accelerator components in the cases of controlled and uncontrolled beam losses. In this paper, we study the energy deposition of protons in solid copper and graphite targets, since the two materials are widely used in magnets, beam screens, collimators, and beam absorbers. Nominal injection and extraction energies in the hadron accelerator complex at CERN were selected in the range of 50 MeV-50 TeV. Three beam sizes were studied for each energy, corresponding to typical values of the betatron function. Specifically for thin targets, comparisons between fluka simulations and analytical Bethe equation calculations were carried out, which showed that the damage potential of a few-millimeter-thick graphite target and submillimeter-thick copper foil can be well estimated directly by the Bethe equation. The paper provides a valuable reference for the quick evaluation of potential damage to accelerator elements over a large range of beam parameters when beam loss occurs.

  20. The Effects of Ion-Assisted Deposition on the Mechanical, Physical, Chemical and Optical Properties of Magnesium Fluoride Thin Films.

    Science.gov (United States)

    Kennemore, Charles Milton, III

    1992-01-01

    This dissertation investigates the results of ion assisted deposition (IAD) on various properties of magnesium fluoride thin films deposited on room temperature substrates. MgF_2 films deposited in this manner have increased abrasion resistance and increased adhesion comparable to that found in films deposited at the usual substrate temperature of approximately 300 ^circC. IAD tends to drive the normal high tensile stress of non-IAD films to a more compressive state thereby reducing the overall stress. The IAD MgF _2 films have a higher index of refraction than non-IAD films, as high as 1.41, and the ultraviolet absorption edge in shifted to longer wavelengths beginning about 350 nm but no detectable absorption at visible wavelengths is seen in the films deposited with less than 250 eV bombardment energies. However, at higher IAD energies beginning at approximately 600 eV an absorption band is present in the red end of the visible spectrum making low energy bombardment the parameter of choice. Transmission electron microscopy and X-ray diffraction studies show that the IAD films have a more amorphous-like structure with fewer and smaller crystallites than non-IAD films deposited on either heated or unheated substrates. Rutherford backscattering spectroscopy (RBS) shows the bombarded films have fluorine depletion that roughly scales with the energy of bombardment with F:Mg ratios as low as 1.69 being found. Bombardment by fluorinated compounds, specifically C_2 F_6 and SF_6 , limit this depletion and in some instances super fluorinate the resulting compound. Additionally, RBS shows that IAD introduces a significant amount of oxygen throughout the film that is unaccountable as water take-up. X-ray photoelectron spectroscopy (XPS) indicates the presence of two compounds of oxygen that are attributed to MgO and Mg(OH)_2 or some oxy-fluoride complex similar to them and it is the introduction of these compounds which provide for the changes in the properties of IAD MgF_2

  1. Progress in computer-assisted diagnosis and control of neutral beam lines

    International Nuclear Information System (INIS)

    Theil, E.; Elischer, V.; Fiddler, J.; Jacobs, N.J.D.; Jacobson, V.; Lawhorn, R.; Uber, D.; Wilner, D.

    1980-09-01

    This paper discusses the principles that have guided the development of a computerized diagnostic and control system for both the Neutral Beam Systems Test Facility at Lawrence Berkeley Laboratory and the Doublet III neutral beams at the General Atomic Company. The emphasis is not on the particular details of the implementation, but on general considerations which have influenced the design criteria for the system. Foremost among these are the requirements of an appropriate human interface to the system, and effective use of a relational data base. Examples are used to illustrate how these principles are carried out in practice. A systems view of diagnostic programs is suggested in the light of our experience

  2. Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

    Directory of Open Access Journals (Sweden)

    Abraham Arias

    2018-01-01

    Full Text Available β-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The films were grown using an elemental gallium source and oxygen supplied by an RF plasma source. Reflection high-energy electron diffraction (RHEED was used to monitor the surface quality in real time. Both in situ RHEED and ex situ X-ray diffraction confirmed the formation of single crystal β-phase films with excellent crystallinity on c-plane sapphire. Spectroscopic ellipsometry was used to determine the film thicknesses, giving values in the 11.6–18.8 nm range and the refractive index dispersion curves. UV-Vis transmittance measurements revealed that strong absorption of β-Ga2O3 starts at ∼270 nm. Top metal contacts were deposited by thermal evaporation for I-V characterization, which has been carried out in dark, as well as under visible and UV light illumination. The optical and electrical measurements showed that the grown thin films of β-Ga2O3 are excellent candidates for deep-ultraviolet detection and sensing.

  3. Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Skierbiszewski, C.; Wasilewski, Z.R.; Siekacz, M.; Feduniewicz, A.; Perlin, P.; Wisniewski, P.; Borysiuk, J.; Grzegory, I.; Leszczynski, M.; Suski, T.; Porowski, S.

    2005-01-01

    We report on the InGaN multiquantum laser diodes (LDs) made by rf plasma-assisted molecular beam epitaxy (PAMBE). The laser operation at 408 nm is demonstrated at room temperature with pulsed current injections using 50 ns pulses at 0.25% duty cycle. The threshold current density and voltage for the LDs with cleaved uncoated mirrors are 12 kA/cm 2 (900 mA) and 9 V, respectively. High output power of 0.83 W is obtained during pulse operation at 3.6 A and 9.6 V bias with the slope efficiency of 0.35 W/A. The laser structures are deposited on the high-pressure-grown low dislocation bulk GaN substrates taking full advantage of the adlayer enhanced lateral diffusion channel for adatoms below the dynamic metallic cover. Our devices compare very favorably to the early laser diodes fabricated using the metalorganic vapor phase epitaxy technique, providing evidence that the relatively low growth temperatures used in this process pose no intrinsic limitations on the quality of the blue optoelectronic components that can be fabricated using PAMBE

  4. In-situ photo-assisted deposition of silver particles on hydrogel fibers for antibacterial applications

    Energy Technology Data Exchange (ETDEWEB)

    Raho, Riccardo [Department of Engineering for Innovation, University of Salento, Via per Monteroni, 73100 Lecce (Italy); CBN, Center for Biomolecular Nanotechnologies, Fondazione Istituto Italiano di Tecnologia, Via Barsanti, 73010 Arnesano, Lecce (Italy); Paladini, Federica; Lombardi, Fiorella Anna [Department of Engineering for Innovation, University of Salento, Via per Monteroni, 73100 Lecce (Italy); Boccarella, Sandro [Megatex S.p.A., Via Cima D' Aosta, 73040 Melissano, Lecce (Italy); Zunino, Benedetta [Università Cattolica del Sacro Cuore, Largo Francesco Vito 1, 00198 Roma (Italy); Pollini, Mauro, E-mail: mauro.pollini@unisalento.it [Department of Engineering for Innovation, University of Salento, Via per Monteroni, 73100 Lecce (Italy); Silvertech Ltd., Via per Monteroni, 73100 Lecce (Italy)

    2015-10-01

    Silver nanoparticles (AgNPs) have attracted intensive research interest and have been recently incorporated in polymers, medical devices, hydrogels and burn dressings to control the proliferation of microorganisms. In this study a novel silver antibacterial coating was deposited for the first time on hydrogel fibers through an in-situ photo-chemical reaction. Hydrogel blends obtained by mixing different percentages of silver-treated and untreated fibers were characterized by thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). Four different fluids, such as phosphate buffered saline (PBS), simulated body fluid (SBF), chemical simulated wound fluid (cSWF), and deionized water (DI water), were used for evaluating the swelling properties. The results obtained confirmed that the presence of silver did not affect the properties of the hydrogel. Moreover, the results obtained through inductively coupled plasma mass spectrometry (ICP-MS) demonstrated very low silver release values, thus indicating the perfect adhesion of the silver coating to the substrate. Good antibacterial capabilities were demonstrated by any hydrogel blend on Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) through agar diffusion tests and optical density readings. - Highlights: • An innovative nano-silver deposition technique was adopted on hydrogel fibers. • Antibacterial effects was verified by agar diffusion and optical density tests. • The swelling properties were investigated using 4 different fluids. • Hydrogel blends with different percentages of silver-treated fibers were compared.

  5. In-situ photo-assisted deposition of silver particles on hydrogel fibers for antibacterial applications

    International Nuclear Information System (INIS)

    Raho, Riccardo; Paladini, Federica; Lombardi, Fiorella Anna; Boccarella, Sandro; Zunino, Benedetta; Pollini, Mauro

    2015-01-01

    Silver nanoparticles (AgNPs) have attracted intensive research interest and have been recently incorporated in polymers, medical devices, hydrogels and burn dressings to control the proliferation of microorganisms. In this study a novel silver antibacterial coating was deposited for the first time on hydrogel fibers through an in-situ photo-chemical reaction. Hydrogel blends obtained by mixing different percentages of silver-treated and untreated fibers were characterized by thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). Four different fluids, such as phosphate buffered saline (PBS), simulated body fluid (SBF), chemical simulated wound fluid (cSWF), and deionized water (DI water), were used for evaluating the swelling properties. The results obtained confirmed that the presence of silver did not affect the properties of the hydrogel. Moreover, the results obtained through inductively coupled plasma mass spectrometry (ICP-MS) demonstrated very low silver release values, thus indicating the perfect adhesion of the silver coating to the substrate. Good antibacterial capabilities were demonstrated by any hydrogel blend on Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) through agar diffusion tests and optical density readings. - Highlights: • An innovative nano-silver deposition technique was adopted on hydrogel fibers. • Antibacterial effects was verified by agar diffusion and optical density tests. • The swelling properties were investigated using 4 different fluids. • Hydrogel blends with different percentages of silver-treated fibers were compared

  6. Nanoparticle and nanorod films deposited by matrix assisted pulsed laser evaporation

    Science.gov (United States)

    Caricato, A. P.; Cesaria, M.; Luches, A.; Martino, M.

    2012-07-01

    The promising results obtained with the MAPLE-deposition of nanostructured thin films, to be used in different fields, are reviewed. Nanoparticles (TiO2, SnO2, CdS) and nanorods (TiO2) with well defined dimensions were suspended in appropriate solvents (distilled water, toluene) with low concentration (1wt% or less). The solutions were flash frozen at the liquid nitrogen temperature to form the targets to be laser irradiated. The MAPLE process allowed a successful transfer from the target to rough and flat substrates, preserving the starting composition and crystalline phase of the nanostructures in a wide range of experimental conditions. In contrast, a careful choice of the laser fluence is mandatory to avoid shape modifications. Growth of metal nanoparticles with a low dispersion in size was also obtained by the MAPLE technique, starting from target solutions of a metallorganic element (AcPd) diluted in different solvents (acetone, diethyl ether). It seems that selecting the solvent with appropriate values of viscosity and boiling temperatures, it is possible to modulate the nanoparticles size. Most of the deposited nanostructured films were tested as sensing elements for gas sensors.

  7. Properties of Erbium Doped Hydrogenated Amorphous Carbon Layers Fabricated by Sputtering and Plasma Assisted Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    V. Prajzler

    2008-01-01

    Full Text Available We report about properties of carbon layers doped with Er3+ ions fabricated by Plasma Assisted Chemical Vapor Deposition (PACVD and by sputtering on silicon or glass substrates. The structure of the samples was characterized by X-ray diffraction and their composition was determined by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The Absorbance spectrum was taken in the spectral range from 400 nm to 600 nm. Photoluminescence spectra were obtained using two types of Ar laser (λex=514.5 nm, lex=488 nm and also using a semiconductor laser (λex=980 nm. Samples fabricated by magnetron sputtering exhibited typical emission at 1530 nm when pumped at 514.5 nm. 

  8. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    International Nuclear Information System (INIS)

    Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-01

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

  9. Synthesis of suspended carbon nanotubes on silicon inverse-opal structures by laser-assisted chemical vapour deposition

    International Nuclear Information System (INIS)

    Shi, J; Lu, Y F; Wang, H; Yi, K J; Lin, Y S; Zhang, R; Liou, S H

    2006-01-01

    Suspended single-walled carbon nanotubes (SWNTs) have been synthesized on Si inverse-opal structures by laser-assisted chemical vapour deposition (LCVD). A CW CO 2 laser at 10.6 μm was used to directly irradiate the substrates during the LCVD process. At a laser power density of 14.3 MW m -2 , suspended SWNT networks were found predominantly rooted at the sharp edges in the Si inverse-opal structures. Raman spectroscopy indicated that the SWNT networks were composed of high-quality defect-free SWNTs with an average diameter of 1.3 nm. At a lower laser power density (6.4 MW m -2 ), multi-walled carbon nanotubes (MWNTs) were grown on the entire surface of the substrates. The preference for the synthesis of SWNTs or MWNTs was attributed to the difference in the catalyst sizes as well as the growth temperature in the LCVD process

  10. Characteristics of combustion flame sprayed nickel aluminum using a Coanda Assisted Spray Manipulation collar for off-normal deposits

    Science.gov (United States)

    Archibald, Reid S.

    A novel flame spray collar called the Coanda Assisted Spray Manipulation collar (CSM) has been tested for use on the Sulzer Metco 5P II combustion flame spray gun. A comparison study of the stock nozzle and the CSM has been performed by evaluating the porosity, surface roughness, microhardness, tensile strength and microscopy of normal and off-normal sprayed NiAl deposits. The use of the CSM collar resulted in the need to position the sprayed coupons closer to the gun, which in turn affected the particle impact energy and particle temperatures of the NiAl powder. For the CSM, porosities had a larger scatterband, surface roughness was comparably the same, microhardness was lower, and tensile strength was higher. The microscopy analysis revealed a greater presence of unmelted particles and steeper intersplat boundaries for the CSM. For both processes, the porosity and surface roughness increased and the microhardness decreased as the spray angle decreased.

  11. Fabrication of high-performance fluorine doped-tin oxide film using flame-assisted spray deposition

    Energy Technology Data Exchange (ETDEWEB)

    Purwanto, Agus, E-mail: Aguspur@uns.ac.id [Department of Chemical Engineering, Faculty of Engineering, Sebelas Maret University, Jl. Ir. Sutami 36 A, Surakarta, Central Java 57126 (Indonesia); Widiyandari, Hendri [Department of Physics, Faculty of Mathematics and Natural Sciences, Diponegoro University, Jl. Prof. Dr. Soedarto, Tembalang, Semarang 50275 (Indonesia); Jumari, Arif [Department of Chemical Engineering, Faculty of Engineering, Sebelas Maret University, Jl. Ir. Sutami 36 A, Surakarta, Central Java 57126 (Indonesia)

    2012-01-01

    A high-performance fluorine-doped tin oxide (FTO) film was fabricated by flame-assisted spray deposition method. By varying the NH{sub 4}F doping concentration, the optimal concentration was established as 8 at.%. X-ray diffractograms confirmed that the as-grown FTO film was tetragonal SnO{sub 2}. In addition, the FTO film was comprised of nano-sized grains ranging from 40 to 50 nm. The heat-treated FTO film exhibited a sheet resistance of 21.8 {Omega}/{open_square} with an average transmittance of 81.9% in the visible region ({lambda} = 400-800 nm). The figures of merit shows that the prepared FTO film can be used for highly efficient dye-sensitized solar cells electrodes.

  12. Crystal assisted experiments for multi-disciplinary physics with heavy ion beams at GANIL

    International Nuclear Information System (INIS)

    Dauvergne, Denis

    2015-01-01

    We present a review of the channeling and blocking experiments that have been performed at GANIL during the 30 years of stable beam operation, with the strong support of the multi-disciplinary CIRIL-CIMAP laboratory. These experiments combine atomic physics, solid state physics and nuclear physics. (paper)

  13. Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires

    International Nuclear Information System (INIS)

    Chong, Su Kong; Goh, Boon Tong; Wong, Yuen-Yee; Nguyen, Hong-Quan; Do, Hien; Ahmad, Ishaq; Aspanut, Zarina; Muhamad, Muhamad Rasat; Dee, Chang Fu; Rahman, Saadah Abdul

    2012-01-01

    High density of silicon nanowires (SiNWs) were synthesized by a hot-wire assisted plasma enhanced chemical vapor deposition technique. The structural and optical properties of the as-grown SiNWs prepared at different rf power of 40 and 80 W were analyzed in this study. The SiNWs prepared at rf power of 40 W exhibited highly crystalline structure with a high crystal volume fraction, X C of ∼82% and are surrounded by a thin layer of SiO x . The NWs show high absorption in the high energy region (E>1.8 eV) and strong photoluminescence at 1.73 to 2.05 eV (red–orange region) with a weak shoulder at 1.65 to 1.73 eV (near IR region). An increase in rf power to 80 W reduced the X C to ∼65% and led to the formation of nanocrystalline Si structures with a crystallite size of <4 nm within the SiNWs. These NWs are covered by a mixture of uncatalyzed amorphous Si layer. The SiNWs prepared at 80 W exhibited a high optical absorption ability above 99% in the broadband range between 220 and ∼1500 nm and red emission between 1.65 and 1.95 eV. The interesting light absorption and photoluminescence properties from both SiNWs are discussed in the text. - Highlights: ► Growth of random oriented silicon nanowires using hot-wire assisted plasma enhanced chemical vapor deposition. ► Increase in rf power reduces the crystallinity of silicon nanowires. ► High density and nanocrystalline structure in silicon nanowires significant enhance the near IR light absorption. ► Oxide defects and silicon nanocrystallites in silicon nanowires reveal photoluminescence in red–orange and red regions.

  14. Tribological characterization of TiCN coatings deposited by two crossed laser ablation plasma beams

    Science.gov (United States)

    Camps, Enrique; Escobar-Alarcón, L.; Camps, Iván; Muhl, Stephen; Flores, Martín

    2013-03-01

    The simultaneous laser ablation of two targets (graphite and titanium) in an Ar-N2 gas mixture was carried out to deposit thin films of the ternary compound TiCN at room temperature. The base conditions used to produce the TiN without carbon were taken from our previous studies. The experimental conditions for the ablation of the carbon target were varied so that the carbon content in the films could be changed depending on the carbon ion energy. The control of the experimental conditions was carried out using a Langmuir planar probe which permitted the determination of the mean kinetic ion energy. The maximum hardness value of 35 GPa, was obtained with a carbon ion energy of about 250 eV, which corresponds to a film with 5 at% carbon content. In order to perform tribological and scratch tests, two types of substrate were used: nitrided AISI 316 stainless steel and AISI 316 stainless steel previously coated with a thin titanium layer (˜50 nm). Values of the wear rate in the range of 1.39×10-6 to 7.45×10-5 mm3 N-1 m-1, friction coefficient from 0.21 to 0.28 and adhesion from scratch test measurements up to 80 N for final critical load, were obtained.

  15. Polystyrene sphere monolayer assisted electrochemical deposition of ZnO nanorods with controlable surface density

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez, D., E-mail: daniel.ramirez@ucv.c [Laboratorio de Electroquimica, Pontificia Universidad Catolica de Valparaiso, Valparaiso (Chile); Gomez, H. [Laboratorio de Electroquimica, Pontificia Universidad Catolica de Valparaiso, Valparaiso (Chile); Lincot, D. [Institute de Recherche et Developpement sur l' Energie Photovoltaique-IRDEP, 6 Quai Watier 78401, Chatou Cedex (France)

    2010-02-15

    In this paper we report the zinc oxide nanorods (ZnO NRs) growth by electrochemical deposition onto polycrystalline gold electrodes modified with assemblies of polystyrene sphere monolayers (PSSMs). Growth occurs through the interstitial spaces between the hexagonally close packed spheres. ZnO NRs nucleate in the region where three adjacent spheres leave a space, being able to grow and projected over the PSSMs. The nanorod surface density (N{sub NR}) shows a linear dependence with respect to a PS sphere diameter selected. XRD analysis shows these ZnO NRs are highly oriented along the (0 0 2) plane (c-axis). This open the possibility to have electronic devices with mechanically supported nanometric materials.

  16. Properties of plasma assisted chemical vapor deposited coatings of titanium boride on Ti--6Al--4V alloy substrates

    International Nuclear Information System (INIS)

    Otter, F.A.; Amisola, G.B.; Roman, W.C.; Hay, S.O.

    1992-01-01

    Coatings prepared in a radio-frequency-plasma (plasma assisted chemical vapor deposition) reactor employing in situ laser diagnostics have been tested and characterized. Detailed characterization studies are important to relate gas phase laser diagnostic studies and concurrent heterogeneous modeling efforts to coating characteristics. Establishing how deposition conditions are correlated with coating properties is expected to provide needed methodology for scale up of applications in the hard face protective coating area. After a brief discussion of preparation conditions and mechanical test results, we present results of chemical and physical measurements on these coatings. Measurement techniques include x-ray diffraction, Dektak surface roughness, scanning tunneling microscopy, scanning electron microscopy, and SEI, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and Rutherford backscattering spectroscopy. The coatings (∼20 μm thick) are very hard (40 GPa at depths over 100 nm), adherent (60 N on scratch test), and sand erosion resistant (>40x as durable as Ti-6Al-4V). They are highly oriented with the c axis (hexagonal-close-packed) normal to the coating surface, rough (∼1 μm), and off-stoichiometry (TiB 2.2 )

  17. Microstructural, chemical and textural characterization of ZnO nanorods synthesized by aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Fuentes-Cobas, L.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C. [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico); Pérez-García, S.A. [Centro de Investigación en Materiales Avanzados, S.C., Unidad Monterrey, Apodaca, Nuevo León 66600 (Mexico); Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico)

    2014-12-15

    ZnO nanorods were synthesized by aerosol assisted chemical vapor deposition onto TiO{sub 2} covered borosilicate glass substrates. Deposition parameters were optimized and kept constant. Solely the effect of different nozzle velocities on the growth of ZnO nanorods was evaluated in order to develop a dense and uniform structure. The crystalline structure was characterized by conventional X-ray diffraction in grazing incidence and Bragg–Brentano configurations. In addition, two-dimensional grazing incidence synchrotron radiation diffraction was employed to determine the preferred growth direction of the nanorods. Morphology and growth characteristics analyzed by electron microscopy were correlated with diffraction outcomes. Chemical composition was established by X-ray photoelectron spectroscopy. X-ray diffraction results and X-ray photoelectron spectroscopy showed the presence of wurtzite ZnO and anatase TiO{sub 2} phases. Morphological changes noticed when the deposition velocity was lowered to the minimum, indicated the formation of relatively vertically oriented nanorods evenly distributed onto the TiO{sub 2} buffer film. By coupling two-dimensional X-ray diffraction and computational modeling with ANAELU it was proved that a successful texture determination was achieved and confirmed by scanning electron microscopy analysis. Texture analysis led to the conclusion of a preferred growth direction in [001] having a distribution width Ω = 20° ± 2°. - Highlights: • Uniform and pure single-crystal ZnO nanorods were obtained by AACVD technique. • Longitudinal and transversal axis parallel to the [001] and [110] directions, respectively. • Texture was determined by 2D synchrotron diffraction and electron microscopy analysis. • Nanorods have its [001] direction distributed close to the normal of the substrate. • Angular spread about the preferred orientation is 20° ± 2°.

  18. Methods for assisting recovery of damaged brain and spinal cord and treating various diseases using arrays of x-ray microplanar beams

    Energy Technology Data Exchange (ETDEWEB)

    Dilmanian, F Avraham [Yaphank, NY; Anchel, David J [Rocky Point, NY; Gaudette, Glenn [Holden, MA; Romanelli, Pantaleo [Monteroduni, IT; Hainfeld, James [Shoreham, NY

    2010-06-29

    A method of assisting recovery of an injury site of the central nervous system (CNS) or treating a disease includes providing a therapeutic dose of X-ray radiation to a target volume through an array of parallel microplanar beams. The dose to treat CNS injury temporarily removes regeneration inhibitors from the irradiated site. Substantially unirradiated cells surviving between beams migrate to the in-beam portion and assist recovery. The dose may be staggered in fractions over sessions using angle-variable intersecting microbeam arrays (AVIMA). Additional doses are administered by varying the orientation of the beams. The method is enhanced by injecting stem cells into the injury site. One array or the AVIMA method is applied to ablate selected cells in a target volume associated with disease for palliative or curative effect. Atrial fibrillation is treated by irradiating the atrial wall to destroy myocardial cells while continuously rotating the subject.

  19. A dynamic plasmonic manipulation technique assisted by phase modulation of an incident optical vortex beam

    International Nuclear Information System (INIS)

    Yuan, G H; Wang, Q; Tan, P S; Lin, J; Yuan, X-C

    2012-01-01

    A novel phase modulation method for dynamic manipulation of surface plasmon polaritons (SPPs) with a phase engineered optical vortex (OV) beam illuminating on nanoslits is experimentally demonstrated. Because of the unique helical phase carried by an OV beam, dynamic control of SPP multiple focusing and standing wave generation is realized by changing the OV beam’s topological charge constituent with the help of a liquid-crystal spatial light modulator. Measurement of SPP distributions with near-field scanning optical microscopy showed an excellent agreement with numerical predictions. The proposed phase modulation technique for manipulating SPPs features has seemingly dynamic and reconfigurable advantages, with profound potential for development of SPP coupling, routing, multiplexing and high-resolution imaging devices on plasmonic chips. (paper)

  20. Progress in computer-assisted diagnosis and control of neutral beam lines

    International Nuclear Information System (INIS)

    Theil, E.; Elischer, V.; Fiddler, J.; Jacobs, N.J.D.; Jacobson, V.; Lawhorn, R.; Uber, D.; Wilner, D.

    1981-01-01

    This paper discusses the principles that have guided the development of a computerized diagnostic and control system for both the Neutral Beam Systems Test Facility at Lawrence Berkeley Laboratory and the Doublet III neutral beams at the General Atomic Company. The emphasis is not on the particular details of the implementation, but on general considerations which have influenced the design criteria for the system. Foremost among these are the requirements of an appropriate human interface to the system, and effective use of a relational data base. Examples are used to illustrate how these principles are carried out in practice. A systems view of diagnostic programs is suggested in the light of our experience. (author)

  1. Mechanical Characterization of Polydopamine-Assisted Silver Deposition on Polymer Substrates

    Science.gov (United States)

    Cordes, Amanda Laurence

    Inspired by the adhesive proteins in marine mussels, polydopamine has become a popular adhesive ad-layer for surface functionalization of a variety of substrates. Based on the chemistry of the dopamine monomer, amine and thiol functional groups are hypothesized to increase adhesion between polymer substrates and polydopamine thin films. This hypothesis was the central motivation for development of a tailorable thiol-ene system in order to study the effects of substrate chemistry on polydopamine adhesion. While polydopamine-adhered silver has been studied on a variety of substrates, no in depth mechanical characterization has been performed and to date, no research has been published on thiol-enes coated in polydopamine-adhered silver. The purpose of this study was to characterize the mechanical durability and adhesion properties of a polydopamine-adhered silver film on commercial substrates and a tailorable thiol-ene system. Polydopamine and silver coatings were deposited on a variety of polymer substrates through a simple dip-coat process. The polydopamine forms a thin uniform adhesive layer and the silver deposits in a discontinuous manner with a nanoparticle sized base layer covering the full surface and micron-sized clusters adhered sporadically on top. Mechanical tensile testing was performed to characterize the durability of the silver coating on commercial polymers. Coated nylon and HDPE showed no signs of degradation or delamination of the polydopamine-adhered silver coating up to 30% strain although both substrates showed large plastic deformation. Peel tests were performed on both commercial polymers as well as a tailorable thiol-ene system. Results support the hypothesis that polydopamine adhesion is increased with the presence of functional groups. Parts of the HDPE sample were cleanly peeled, but silver patches were left sporadically across the surface pointing to weaker adhesion between polyethylene and polydopamine. A high adhesive strength tape was

  2. Hybrid plasma system for magnetron deposition of coatings with ion assistance

    International Nuclear Information System (INIS)

    Vavilin, K V; Kralkina, E A; Nekludova, P A; Petrov, A. K; Nikonov, A M; Pavlov, V B; Airapetov, A A; Odinokov, V V; Pavlov, G Ya; Sologub, V A

    2016-01-01

    The results of the study of the plasma hybrid system based on the combined magnetron discharge and high-frequency inductive discharge located in the external magnetic field is presented. Magnetron discharge provides the generation of atoms and ions of the target materials while the flow of accelerated ions used for the ion assistance is provided by the RF inductive discharge. An external magnetic field is used to optimize the power input to the discharge, to increase the ion current density in the realm of substrate and to enhance the area of uniform plasma. The joint operation of magnetron and RF inductive discharge leads to a substantial increase (not equal to the sum of the parameters obtained under separate operation of two hybrid system channels) of the ion current density and intensity of sputtered material spectral lines radiation. Optimal mode of the hybrid plasma system operation provides uniform ion current density on the diameter of at least 150mm at 0.7PA argon pressure. The optimal values of the magnetic fields in the region of the substrate location lie in the range 2-8 mTl, while in the region of the RF input power unit lie in the range 0.5-25 mTl. (paper)

  3. Mesoscale elucidation of laser-assisted chemical deposition of Sn nanostructured electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Zhixiao; Mukherjee, Partha P., E-mail: pmukherjee@tamu.edu [Department of Mechanical Engineering, Texas A and M University, College Station, Texas 77843 (United States); Deng, Biwei; Cheng, Gary J. [School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47906 (United States); Deng, Huiqiu [Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082 (China)

    2015-06-07

    Nanostructured tin (Sn) is a promising high-capacity electrode for improved performance in lithium-ion batteries for electric vehicles. In this work, Sn nanoisland growth for nanostructured electrodes assisted by the pulse laser irradiation has been investigated based on a mesoscale modeling formalism. The influence of pertinent processing conditions, such as pulse duration, heating/cooling rates, and atom flux, on the Sn nanostructure formation is specifically considered. The interaction between the adsorbed atom and the substrate, represented by the adatom diffusion barrier, is carefully studied. It is found that the diffusion barrier predominantly affects the distribution of Sn atoms. For both α-Sn and β-Sn, the averaged coordination number is larger than 3 when the diffusion barrier equals to 0.15 eV. The averaged coordination number decreases as the diffusion barrier increases. The substrate temperature, which is determined by heating/cooling rates and pulse duration, can also affect the formation of Sn nanoislands. For α-Sn, when applied low heating/cooling rates, nanoislands cannot form if the diffusion barrier is larger than 0.35 eV.

  4. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    Science.gov (United States)

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  5. Visible light active TiO{sub 2} films prepared by electron beam deposition of noble metals

    Energy Technology Data Exchange (ETDEWEB)

    Hou Xinggang, E-mail: hou226@163.co [Department of Physics, Tianjin Normal University, Tianjin 300387 (China); Ma Jun [Department of Physics, Tianjin Normal University, Tianjin 300387 (China); Liu Andong [Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875 (China); Li Dejun; Huang Meidong; Deng Xiangyun [Department of Physics, Tianjin Normal University, Tianjin 300387 (China)

    2010-03-15

    TiO{sub 2} films prepared by sol-gel method were modified by electron beam deposition of noble metals (Pt, Pd, and Ag). Effects of noble metals on the chemical and surface characteristics of the films were studied using XPS, TEM and UV-Vis spectroscopy techniques. Photocatalytic activity of modified TiO{sub 2} films was evaluated by studying the degradation of methyl orange dye solution under visible light UV irradiation. The result of TEM reveals that most of the surface area of TiO{sub 2} is covered by tiny particles of noble metals with diameter less than 1 nm. Broad red shift of UV-Visible absorption band of modified photocatalysts was observed. The catalytic degradation of methyl orange in aqueous solutions under visible light illumination demonstrates a significant enhancement of photocatalytic activity of these films compared with the un-loaded films. The photocatalytic efficiency of modified TiO{sub 2} films by this method is affected by the concentration of impregnating solution.

  6. Effect of heat treatment on properties of HfO2 film deposited by ion-beam sputtering

    Science.gov (United States)

    Liu, Huasong; Jiang, Yugang; Wang, Lishuan; Li, Shida; Yang, Xiao; Jiang, Chenghui; Liu, Dandan; Ji, Yiqin; Zhang, Feng; Chen, Deying

    2017-11-01

    The effects of atmosphere heat treatment on optical, stress, and microstructure properties of an HfO2 film deposited by ion-beam sputtering were systematically researched. The relationships among annealing temperature and refractive index, extinction coefficient, physical thickness, forbidden-band width, tape trailer width, Urbach energy, crystal phase structure, and stress were assessed. The results showed that 400 °C is the transformation point, and the microstructure of the HfO2 film changed from an amorphous into mixed-phase structure. Multistage phonons appeared on the HfO2 film, and the trends of the refractive index, extinction coefficient, forbidden-band width change, and Urbach energy shifted from decrease to increase. With the elevation of the annealing temperature, the film thickness increased monotonously, the compressive stress gradually turned to tensile stress, and the transformation temperature point for the stress was between 200 °C and 300 °C. Therefore, the change in the stress is the primary cause for the shifts in thin-film thickness.

  7. X-ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during deposition

    International Nuclear Information System (INIS)

    Nelson, A.J.; Aharoni, H.

    1987-01-01

    X-ray photoelectron spectroscopy analysis was performed on ion beam sputter deposited films of indium tin oxide as a function of O 2 partial pressure during deposition. The oxygen partial pressure was varied over the range of 2.5 x 10 -6 --4.0 x 10 -5 Torr. Changes in composition as well as in the deconvoluted In 3d 5 /sub // 2 , Sn 3d 5 /sub // 2 , and O 1s core level spectra were observed and correlated with the variation of the oxygen partial pressure during deposition. Results show that the films become increasingly stoichiometric as P/sub =/ is increased and that the excess oxygen introduced during deposition is bound predominantly to the Sn and has little or no effect on the In--O bonding

  8. Numerical simulations of energy deposition caused by 50 MeV—50 TeV proton beams in copper and graphite targets

    CERN Document Server

    Nie, Y; Chetvertkova, V; Rosell-Tarrago, G; Burkart, F; Wollmann, D

    2017-01-01

    The conceptual design of the Future Circular Collider (FCC) is being carried out actively in an international collaboration hosted by CERN, for the post–Large Hadron Collider (LHC) era. The target center-of-mass energy of proton-proton collisions for the FCC is 100 TeV, nearly an order of magnitude higher than for LHC. The existing CERN accelerators will be used to prepare the beams for FCC. Concerning beam-related machine protection of the whole accelerator chain, it is critical to assess the consequences of beam impact on various accelerator components in the cases of controlled and uncontrolled beam losses. In this paper, we study the energy deposition of protons in solid copper and graphite targets, since the two materials are widely used in magnets, beam screens, collimators, and beam absorbers. Nominal injection and extraction energies in the hadron accelerator complex at CERN were selected in the range of 50 MeV–50 TeV. Three beam sizes were studied for each energy, corresponding to typical values ...

  9. Computer simulations of an oxygen inductively coupled plasma used for plasma-assisted atomic layer deposition

    International Nuclear Information System (INIS)

    Tinck, S; Bogaerts, A

    2011-01-01

    In this paper, an O 2 inductively coupled plasma used for plasma enhanced atomic layer deposition of Al 2 O 3 thin films is investigated by means of modeling. This work intends to provide more information about basic plasma properties such as species densities and species fluxes to the substrate as a function of power and pressure, which might be hard to measure experimentally. For this purpose, a hybrid model developed by Kushner et al is applied to calculate the plasma characteristics in the reactor volume for different chamber pressures ranging from 1 to 10 mTorr and different coil powers ranging from 50 to 500 W. Density profiles of the various oxygen containing plasma species are reported as well as fluxes to the substrate under various operating conditions. Furthermore, different orientations of the substrate, which can be placed vertically or horizontally in the reactor, are taken into account. In addition, special attention is paid to the recombination process of atomic oxygen on the different reactor walls under the stated operating conditions. From this work it can be concluded that the plasma properties change significantly in different locations of the reactor. The plasma density near the cylindrical coil is high, while it is almost negligible in the neighborhood of the substrate. Ion and excited species fluxes to the substrate are found to be very low and negligible. Finally, the orientation of the substrate has a minor effect on the flux of O 2 , while it has a significant effect on the flux of O. In the horizontal configuration, the flux of atomic oxygen can be up to one order of magnitude lower than in the vertical configuration.

  10. UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    W. Kong

    2017-03-01

    Full Text Available A high Al-content (y > 0.4 multi-quantum-well (MQW structure with a quaternary InxAlyGa(1-x-yN active layer was synthesized using plasma-assisted molecular beam epitaxy. The MQW structure exhibits strong carrier confinement and room temperature ultraviolet-B (UVB photoluminescence an order of magnitude stronger than that of a reference InxAlyGa(1-x-yN thin film with comparable composition and thickness. The samples were characterized using spectroscopic ellipsometry, atomic force microscopy, and high-resolution X-ray diffraction. Numerical simulations suggest that the UVB emission efficiency is limited by dislocation-related non-radiative recombination centers in the MQW and at the MQW - buffer interface. Emission efficiency can be significantly improved by reducing the dislocation density from 109cm−2 to 107cm−2 and by optimizing the width and depth of the quantum wells.

  11. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

    International Nuclear Information System (INIS)

    Zhang Meng; Bhattacharya, Pallab; Guo Wei; Banerjee, Animesh

    2010-01-01

    Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 deg. C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1x10 18 cm -3 . The corresponding doping efficiency and hole mobility are ∼4.9% and 3.7 cm 2 /V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (λ peak =529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 Ω.

  12. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kong, W., E-mail: wei.kong@duke.edu; Jiao, W. Y.; Kim, T. H.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Roberts, A. T. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Fournelle, J. [Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States); Losurdo, M. [CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari (Italy); Everitt, H. O. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2015-09-28

    Thin films of the wide bandgap quaternary semiconductor In{sub x}Al{sub y}Ga{sub (1−x−y)}N with low In (x = 0.01–0.05) and high Al composition (y = 0.40–0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280 nm–320 nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.

  13. Masking considerations in chemically assisted ion beam etching of GaAs/AlGaAs laser structures

    International Nuclear Information System (INIS)

    Behfar-Rad, A.; Wong, S.S.; Davis, R.J.; Wolf, E.D.; Cornell Univ., Ithaca, NY

    1989-01-01

    The use of photoresist, Cr, and SiO 2 as etch masks for GaAs/AlGaAs structures in chemically assisted ion beam etching is reported. The optimized etch with a photoresist mask results in a high degree of anisotropy and smooth sidewalls. However, the etched surface contains undesirable features. The etch with a Cr mask is also highly anisotropic, and the etched surface is free of features. The drawback with Cr masks is that the sidewalls are rough. Vertical and smooth sidewalls as well as a featureless surface are obtained with a SiO 2 mask. The SiO 2 mask has been employed to etch the facets of monolithic GaAs/AlGaAs-based laser structures

  14. Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Oshima, Yuichi; Ahmadi, Elaheh; Kaun, Stephen; Wu, Feng; Speck, James S.

    2018-01-01

    We investigated the homoepitaxial growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy. The growth rate of β-Ga2O3 increased with increasing Ga-flux, reaching a clear plateau of 56 nm h-1, and then decreased at higher Ga-flux. The growth rate decreased from 56 to 42 nm h-1 when the substrate temperature was increased from 750 °C to 800 °C. The growth rate was negative (net etching) when only Ga-flux was supplied. The etching rate proportionally increased with increasing the Ga-flux, reaching 84 nm h-1. The etching was enhanced at higher temperatures. It was found that Ga-etching of (001) β-Ga2O3 substrates prior to the homoepitaxial growth markedly improved the surface roughness of the film.

  15. Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Brown, April [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

    2006-06-15

    The growth of GaN by plasma assisted molecular beam epitaxy on GaN template substrates (GaN on sapphire) is investigated with in-situ multi-channel spectroscopic ellipsometry. Growth is performed under various Ga/N flux ratios at growth temperatures in the range 710-780 C. The thermal roughening of the GaN template caused by decomposition of the surface is investigated through the temporal variation of the GaN pseudodielectric function over the temperature range of 650 C to 850 C. The structural, morphological, and optical properties are also discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. P-type doping of semipolar GaN(11 anti 22) by plasma-assisted molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Das, A.; Lahourcade, L. [Equipe Mixte CEA-CNRS, Nanophysique et Semiconducteurs, CEA-Grenoble, INAC/SP2M, Grenoble (France); Pernot, J. [Institut Neel, CNRS et Universite Joseph Fourier, Grenoble (France); Valdueza-Felip, S. [Equipe Mixte CEA-CNRS, Nanophysique et Semiconducteurs, CEA-Grenoble, INAC/SP2M, Grenoble (France); Dept. Electronica, Escuela Politecnica, Universidad de Alcala, Alcala de Henares, Madrid (Spain); Ruterana, P. [CIMAP, UMR6252, CNRS-ENSICAEN-CEA-UCBN, Caen (France); Laufer, A.; Eickhoff, M. [I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen (Germany); Monroy, E.

    2010-07-15

    We report the effect of Mg doping on the growth kinetics of semipolar GaN(11-22) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(11-22). As a result, the growth widow is reduced for Mg doped layers, and we observe a certain deterioration of the surface morphology. In spite of this difficulties, homogenous Mg incorporation is achieved and layers display p -type conductivity for Mg atomic concentration higher than 7 x 10{sup 18} cm{sup -3}. Microscopy studies show no evidence of the pyramidal defects or polarity inversion domains found in Mg-doped GaN(0001). (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Dong Zhang

    2017-03-01

    Full Text Available Vanadium dioxide (VO2 thermochromic thin films with various thicknesses were grown on quartz glass substrates by radio frequency (RF-plasma assisted oxide molecular beam epitaxy (O-MBE. The crystal structure, morphology and chemical stoichiometry were investigated systemically by X-ray diffraction (XRD, atomic force microscopy (AFM, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS analyses. An excellent reversible metal-to-insulator transition (MIT characteristics accompanied by an abrupt change in both electrical resistivity and optical infrared (IR transmittance was observed from the optimized sample. Remarkably, the transition temperature (TMIT deduced from the resistivity-temperature curve was reasonably consistent with that obtained from the temperature-dependent IR transmittance. Based on Raman measurement and XPS analyses, the observations were interpreted in terms of residual stresses and chemical stoichiometry. This achievement will be of great benefit for practical application of VO2-based smart windows.

  18. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  19. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  20. Effect of angle of deposition on micro-roughness parameters and optical properties of HfO{sub 2} thin films deposited by reactive electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Tokas, R.B., E-mail: tokasstar@gmail.com; Jena, S.; Thakur, S.; Sahoo, N.K.

    2016-06-30

    Oblique angle deposited oxide thin films, in which refractive index profiles can be tailored across depth by tuning their microstructure using varying angle of deposition, have opened up new dimensions in fabrication of optical interference devices. Since surface morphology plays an important role for the qualification of these thin film devices for optical or other applications, it is important to investigate morphological properties of obliquely deposited thin films. In the present work, a set of HfO{sub 2} thin films have been deposited at several oblique angles. Morphological parameters of such thin films viz., correlation length, intrinsic roughness, fractal spectral strength, etc., have been determined through suitable modelling of extended power spectral density measured by atomic force microscopy. It has been found that intrinsic roughness and fractal spectral strength show an interesting behaviour with deposition angle and the same has been discussed in the light of atomic shadowing and re-emission and diffusion of ad-atoms. Further refractive index and thickness of such thin films have been estimated from optical transmission spectra through suitable modelling. Refractive index of such thin film varies from 1.93 to 1.37 as the deposition angle varies from normal to glancing angle (80°). Further, refractive index and grain size depict an opposite trend with deposition angle. This variation has been explained in terms of varying film porosity and column slanting with angle of deposition. - Highlights: • HfO{sub 2} thin films deposited at several oblique angles • Film deposited at 80° exhibits the highest grain size and intrinsic roughness (σ). • Fractal strength and σ depict an interesting trend with angle of deposition. • Refractive index and grain size depict an opposite trend with angle of deposition.

  1. Self-excitation of microwave oscillations in plasma-assisted slow-wave oscillators by an electron beam with a movable focus

    Science.gov (United States)

    Bliokh, Yu. P.; Nusinovich, G. S.; Shkvarunets, A. G.; Carmel, Y.

    2004-10-01

    Plasma-assisted slow-wave oscillators (pasotrons) operate without external magnetic fields, which makes these devices quite compact and lightweight. Beam focusing in pasotrons is provided by ions, which appear in the device due to the impact ionization of a neutral gas by beam electrons. Typically, the ionization time is on the order of the rise time of the beam current. This means that, during the rise of the current, beam focusing by ions becomes stronger. Correspondingly, a beam of electrons, which was initially diverging radially due to the self-electric field, starts to be focused by ions, and this focus moves towards the gun as the ion density increases. This feature makes the self-excitation of electromagnetic (em) oscillations in pasotrons quite different from practically all other microwave sources where em oscillations are excited by a stationary electron beam. The process of self-excitation of em oscillations has been studied both theoretically and experimentally. It is shown that in pasotrons, during the beam current rise the amount of current entering the interaction space and the beam coupling to the em field vary. As a result, the self-excitation can proceed faster than in conventional microwave sources with similar operating parameters such as the operating frequency, cavity quality-factor and the beam current and voltage.

  2. Nanoparticle-Assisted Scanning Focusing X-Ray Therapy with Needle Beam X Rays.

    Science.gov (United States)

    Davidson, R Andrew; Guo, Ting

    2016-01-01

    In this work, we show a new therapeutic approach using 40-120 keV X rays to deliver a radiation dose at the isocenter located many centimeters below the skin surface several hundred times greater than at the skin and how this dose enhancement can be augmented with nanomaterials to create several thousand-fold total dose enhancement effect. This novel approach employs a needle X-ray beam directed at the isocenter centimeters deep in the body while continuously scanning the beam to cover a large solid angle without overlapping at the skin. A Monte Carlo method was developed to simulate an X-ray dose delivered to the isocenter filled with X-ray absorbing and catalytic nanoparticles in a water phantom. An experimental apparatus consisting of a moving plastic phantom irradiated with a stationary 1 mm needle X-ray beam was built to test the theoretical predictions. X-ray films were used to characterize the dose profiles of the scanning X-ray apparatus. Through this work, it was determined that the X-ray dose delivered to the isocenter in a treatment voxel (t-voxel) underneath a 5 cm deep high-density polyethylene (HDPE) phantom was 295 ± 48 times greater than the surface dose. This measured value was in good agreement with the theoretical predicted value of 339-fold. Adding X-ray-absorbing nanoparticles, catalytic nanoparticles or both into the t-voxel can further augment the dose enhancement. For example, we predicted that adding 1 weight percentage (wp) of gold into water could increase the effective dose delivered to the target by onefold. Dose enhancement using 1 mm X-ray beam could reach about 1,600-fold in the t-voxel when 7.5 wp of 88 nm diameter silica-covered gold nanoparticles were added, which we showed in a previously published study can create a dose enhancement of 5.5 ± 0.46-fold without scanning focusing enhancement. Based on the experimental data from that study, mixing 0.02 wp 2.5 nm diameter small tetrakis hydroxymethyl phosphonium chloride (THPC

  3. Pulsed ion beam-assisted carburizing of titanium in methane discharge

    International Nuclear Information System (INIS)

    Shafiq, M.; Shahzad, K.; Zakaullah, M.; Hassan, M.; Qayyum, A.; Ahmad, S.; Rawat, R. S.

    2010-01-01

    The carburizing of titanium (Ti) is accomplished by utilizing energetic ion pulses of a 1.5 kJ Mather type dense plasma focus (DPF) device operated in methane discharge. X-ray diffraction (XRD) analysis confirms the deposition of polycrystalline titanium carbide (TiC). The samples carburized at lower axial and angular positions show an improved texture for a typical (200)TiC plane. The Williamson–Hall method is employed to estimate average crystallite size and microstrains in the carburized Ti surface. Crystallite size is found to vary from ∼ 50 to 100 nm, depending on the deposition parameters. Microstrains vary with the sample position and hence ion flux, and are converted from tensile to compressive by increasing the flux. The carburizing of Ti is confirmed by two major doublets extending from 300 to 390 cm −1 and from 560 to 620 cm −1 corresponding to acoustic and optical active modes in Raman spectra, respectively. Analyses by scanning electron microscopy/energy dispersive x-ray spectroscopy (SEM/EDS) have provided qualitative and quantitative profiles of the carburized surface. The Vickers microhardness of Ti is significantly improved after carburizing. (nuclear physics)

  4. Numerical simulations of energy deposition caused by 50 MeV—50 TeV proton beams in copper and graphite targets

    Directory of Open Access Journals (Sweden)

    Y. Nie

    2017-08-01

    Full Text Available The conceptual design of the Future Circular Collider (FCC is being carried out actively in an international collaboration hosted by CERN, for the post–Large Hadron Collider (LHC era. The target center-of-mass energy of proton-proton collisions for the FCC is 100 TeV, nearly an order of magnitude higher than for LHC. The existing CERN accelerators will be used to prepare the beams for FCC. Concerning beam-related machine protection of the whole accelerator chain, it is critical to assess the consequences of beam impact on various accelerator components in the cases of controlled and uncontrolled beam losses. In this paper, we study the energy deposition of protons in solid copper and graphite targets, since the two materials are widely used in magnets, beam screens, collimators, and beam absorbers. Nominal injection and extraction energies in the hadron accelerator complex at CERN were selected in the range of 50 MeV–50 TeV. Three beam sizes were studied for each energy, corresponding to typical values of the betatron function. Specifically for thin targets, comparisons between fluka simulations and analytical Bethe equation calculations were carried out, which showed that the damage potential of a few-millimeter-thick graphite target and submillimeter-thick copper foil can be well estimated directly by the Bethe equation. The paper provides a valuable reference for the quick evaluation of potential damage to accelerator elements over a large range of beam parameters when beam loss occurs.

  5. Energy deposition evaluation for ultra-low energy electron beam irradiation systems using calibrated thin radiochromic film and Monte Carlo simulations

    Energy Technology Data Exchange (ETDEWEB)

    Matsui, S., E-mail: smatsui@gpi.ac.jp; Mori, Y. [The Graduate School for the Creation of New Photonics Industries, 1955-1 Kurematsucho, Nishiku, Hamamatsu, Shizuoka 431-1202 (Japan); Nonaka, T.; Hattori, T.; Kasamatsu, Y.; Haraguchi, D.; Watanabe, Y.; Uchiyama, K.; Ishikawa, M. [Hamamatsu Photonics K.K. Electron Tube Division, 314-5 Shimokanzo, Iwata, Shizuoka 438-0193 (Japan)

    2016-05-15

    For evaluation of on-site dosimetry and process design in industrial use of ultra-low energy electron beam (ULEB) processes, we evaluate the energy deposition using a thin radiochromic film and a Monte Carlo simulation. The response of film dosimeter was calibrated using a high energy electron beam with an acceleration voltage of 2 MV and alanine dosimeters with uncertainty of 11% at coverage factor 2. Using this response function, the results of absorbed dose measurements for ULEB were evaluated from 10 kGy to 100 kGy as a relative dose. The deviation between the responses of deposit energy on the films and Monte Carlo simulations was within 15%. As far as this limitation, relative dose estimation using thin film dosimeters with response function obtained by high energy electron irradiation and simulation results is effective for ULEB irradiation processes management.

  6. Deposition and properties of Al-containing diamond-like carbon films by a hybrid ion beam sources

    International Nuclear Information System (INIS)

    Dai Wei; Wang Aiying

    2011-01-01

    Research highlights: → Weak carbide former, Al element, was incorporated into DLC films using a hybrid ion beams system comprising an anode-layer ion source and a magnetron sputtering unit. → The structure disorder of the films tended to decrease with Al atoms doping, which resulted in the distinct reduction of the film internal stress and hardness, but the internal stress dropped faster than the hardness. → The DLC films with low internal stress and high hardness can be acquired by Al incorporation. - Abstract: Metal incorporation is one of the most effective methods for relaxing internal stress in diamond-like carbon (DLC) films. It was reported that the chemical state of the incorporated metal atoms has a significant influence on the film internal stress. The doped atoms embedding in the DLC matrix without bonding with C atoms can reduce the structure disorder of the DLC films through bond angle distortion and thus relax the internal stress of the films. In present paper, Al atoms, which are inert to carbon, were incorporated into the DLC films deposited by a hybrid ion beams system comprising an anode-layer ion source and a magnetron sputtering unit. The film composition, microstructure and atomic bond structure were characterized using X-ray photoelectron spectroscopy, transmission electron microscopy and Raman spectroscopy. The internal stress, mechanical properties and tribogoical behavior were studied as a function of Al concentration using a stress-tester, nanoindentation and ball-on-disc tribo-tester, respectively. The results indicated that the incorporated Al atoms were dissolved in the DLC matrix without bonding with C atoms and the films exhibited the feature of amorphous carbon. The structure disorder of the films tended to decrease with Al atoms incorporation. This resulted in the distinct reduction of the internal stress in the films. All Al-DLC films exhibited a lower friction coefficient compared with pure DLC film. The formation of the

  7. Low-temperature synthesis of diamond films by photoemission-assisted plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kawata, Mayuri, E-mail: kawata@mail.tagen.tohoku.ac.jp; Ojiro, Yoshihiro; Ogawa, Shuichi; Takakuwa, Yuji [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Masuzawa, Tomoaki; Okano, Ken [International Christian University, 3-10-2 Osawa, Mitaka 181-8585 (Japan)

    2014-03-15

    Photoemission-assisted plasma-enhanced chemical vapor deposition (PA-PECVD), a process in which photoelectrons emitted from a substrate irradiated with ultraviolet light are utilized as a trigger for DC discharge, was investigated in this study; specifically, the DC discharge characteristics of PA-PECVD were examined for an Si substrate deposited in advance through hot-filament chemical vapor deposition with a nitrogen-doped diamond layer of thickness ∼1 μm. Using a commercially available Xe excimer lamp (hν = 7.2 eV) to illuminate the diamond surface with and without hydrogen termination, the photocurrents were found to be 3.17 × 10{sup 12} and 2.11 × 10{sup 11} electrons/cm{sup 2}/s, respectively. The 15-fold increase in photocurrent was ascribed to negative electron affinity (NEA) caused by hydrogen termination on the diamond surfaces. The DC discharge characteristics revealed that a transition bias voltage from a Townsend-to-glow discharge was considerably decreased because of NEA (from 490 to 373 V for H{sub 2} gas and from 330 to 200 V for Ar gas), enabling a reduction in electric power consumption needed to synthesize diamond films through PA-PECVD. In fact, the authors have succeeded in growing high-quality diamond films of area 2.0 cm{sup 2} at 540 °C with a discharge power of only 1.8 W, plasma voltage of 156.4 V, and discharge current of 11.7 mA under the glow discharge of CH{sub 4}/H{sub 2}/Ar mixed gases. In addition to having only negligible amounts of graphite and amorphous carbon, the diamond films exhibit a relatively high diamond growth rate of 0.5 μm/h at temperatures as low as 540 °C, which is attributed to Ar{sup +} ions impinging on the diamond surface, and causing the removal of hydrogen atoms from the surface through sputtering. This process leads to enhanced CH{sub x} radical adsorption, because the sample was applied with a negative potential to accelerate photoelectrons in PA-PECVD.

  8. Evaluation of the Energy Deposition in the event of an Asynchronous Beam Dump for a 7 TeV beam on the new TCDQ model proposed for the LHC

    CERN Document Server

    Versaci, R; CERN. Geneva. ATS Department

    2012-01-01

    An asynchronous beam dump is one of the most critical accident the LHC could face. In the effort to have a better protection of the machine, a new model for the TCDQ (Target Collimator Dump Quadrupole) has been proposed and is under evaluation. Within this frame we have performed FLUKA evaluation of the energy deposition. The results of our simulations are also input for the evaluation of the heat load on the collimator.

  9. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications

    KAUST Repository

    Alias, Mohd Sharizal; Yang, Yang; Ng, Tien Khee; Dursun, Ibrahim; Shi, Dong; Saidaminov, Makhsud I.; Priante, Davide; Bakr, Osman; Ooi, Boon S.

    2015-01-01

    is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability

  10. Time-Resolved Quantum Cascade Laser Absorption Spectroscopy of Pulsed Plasma Assisted Chemical Vapor Deposition Processes Containing BCl3

    Science.gov (United States)

    Lang, Norbert; Hempel, Frank; Strämke, Siegfried; Röpcke, Jürgen

    2011-08-01

    In situ measurements are reported giving insight into the plasma chemical conversion of the precursor BCl3 in industrial applications of boriding plasmas. For the online monitoring of its ground state concentration, quantum cascade laser absorption spectroscopy (QCLAS) in the mid-infrared spectral range was applied in a plasma assisted chemical vapor deposition (PACVD) reactor. A compact quantum cascade laser measurement and control system (Q-MACS) was developed to allow a flexible and completely dust-sealed optical coupling to the reactor chamber of an industrial plasma surface modification system. The process under the study was a pulsed DC plasma with periodically injected BCl3 at 200 Pa. A synchronization of the Q-MACS with the process control unit enabled an insight into individual process cycles with a sensitivity of 10-6 cm-1·Hz-1/2. Different fragmentation rates of the precursor were found during an individual process cycle. The detected BCl3 concentrations were in the order of 1014 molecules·cm-3. The reported results of in situ monitoring with QCLAS demonstrate the potential for effective optimization procedures in industrial PACVD processes.

  11. Iron selenide films by aerosol assisted chemical vapor deposition from single source organometallic precursor in the presence of surfactants

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Raja Azadar [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Badshah, Amin, E-mail: aminbadshah@yahoo.com [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Younis, Adnan [School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia); Khan, Malik Dilshad [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Akhtar, Javeed [Department of Physics, COMSATS Institute of Information Technology, Park Road, Chak Shahzad, Islamabad (Pakistan)

    2014-09-30

    This article presents the synthesis and characterization (multinuclear nuclear magnetic resonance, Fourier transform infrared spectroscopy, carbon–hydrogen–nitrogen–sulfur analyzer, atomic absorption spectrometry and thermogravimetric analysis) of a single source organometallic precursor namely 1-acetyl-3-(4-ferrocenylphenyl)selenourea for the fabrication of iron selenide (FeSe) films on glass substrates using aerosol assisted chemical vapor deposition (AACVD). The changes in the morphologies of the films have been monitored by the use of two different surfactants i.e. triton X-100 and tetraoctylphosphonium bromide during AACVD. The role of surfactant has been evaluated by examining the interaction of the surfactants with the precursor by using UV–vis spectroscopy and cyclic voltammetry. The fabricated FeSe films have been characterized with powder X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. - Highlights: • Ferrocene incorporated selenourea (FIS) has been synthesized and characterized. • FeSe thin films have been fabricated from FIS. • Mechanism of film growth was studied with cyclic voltammetry and UV–vis spectroscopy.

  12. Electrochemically assisted deposition of sol-gel bio-composite with co-immobilized dehydrogenase and diaphorase

    Energy Technology Data Exchange (ETDEWEB)

    Wang Zhijie [LCPME, UMR 7564, CNRS-Nancy University, 405, rue de Vandoeuvre, 54600 Villers-les-Nancy (France); Etienne, Mathieu, E-mail: mathieu.etienne@lcpme.cnrs-nancy.fr [LCPME, UMR 7564, CNRS-Nancy University, 405, rue de Vandoeuvre, 54600 Villers-les-Nancy (France); Kohring, Gert-Wieland [Mikrobiologie, Universitaet des Saarlandes, Campus, Geb. A1.5, D-66123 Saarbruecken (Germany); Bon-Saint-Come, Yemima; Kuhn, Alexander [Universite Bordeaux, ISM, ENSCPB, 16 avenue Pey Berland, 33607 Pessac (France); Walcarius, Alain [LCPME, UMR 7564, CNRS-Nancy University, 405, rue de Vandoeuvre, 54600 Villers-les-Nancy (France)

    2011-10-30

    We report here that the electrochemically assisted deposition (EAD) of silica thin films can be a good strategy to co-encapsulate D-sorbitol dehydrogenase (DSDH) and diaphorase in an active form. This is achieved via the electrolysis of a hydrolyzed sol containing the biomolecules to initiate the poly-condensation of silica precursors upon electrochemically induced pH increase at the electrode/solution interface. DSDH was found to be very sensitive to the silica gel environment and the addition of a positively-charged polyelectrolyte was necessary to ensure effective operational behavior of the biomolecules. The composition of the sol and the conditions for electrolysis have been optimized with respect to the intensity of the electrochemical response to D-sorbitol oxidation. The K{sub m} of DSDH in the electrodeposited film was in the range of 3 mM, slightly better than the value determined biochemically in solution (6.5 mM). The co-immobilization of DSDH and diaphorase in this way led on the one hand to the possible reduction of NAD{sup +} to NADH (simultaneously to D-sorbitol oxidation) and on the other hand to the safe re-oxidation of the co-factor using a mediator (ferrocenedimethanol) as electron relay. The bioelectrocatalytic response looks promising for electro-enzymatic applications. To support this idea, the EAD of sol-gel bio-composite has been extended to macroporous electrodes displaying a much bigger electroactive surface area.

  13. Growth and Properties of Cl- Incorporated ZnO Nanofilms Grown by Ultrasonic Spray-Assisted Chemical Vapor Deposition.

    Science.gov (United States)

    Chen, Tingfang; Wang, Aiji; Kong, Lingrui; Li, Yongliang; Wang, Yinshu

    2016-04-01

    Pure and Cl- incorporated ZnO nanofilms were grown by the ultrasonic spray-assisted chemical vapor deposition (CVD) method. The properties of the nanofilms were investigated. The effects of growth temperature and Cl- concentration on the crystal structure, morphology, and optical properties of the nanofilms were studied. Temperature plays an important role in the growth mode and morphology of the pure nanofilms. Preferential growth along the c-axis occurs only at modulating temperature. Lower temperature suppresses the preferential growth, and higher temperature suppresses the growth of the nanofilms. The morphologies of the nanofilms change from lamellar and spherical structures into hexagonal platelets, then into separated nanoparticles with an increase in the temperature. Incorporating Cl- results in the lattice contracting gradually along with c-axis. Grains composing the nanofilms refine, and the optical gap broadens with increasing of Cl- concentration in growth precursor. Incorporating Cl- could reduce oxygen vacancies and passivate the non-irradiated centers, thus enhancing the UV emission and suppressing the visible emission of ZnO nanofilms.

  14. Polymer-assisted metal deposition (PAMD): a full-solution strategy for flexible, stretchable, compressible, and wearable metal conductors.

    Science.gov (United States)

    Yu, You; Yan, Casey; Zheng, Zijian

    2014-08-20

    Metal interconnects, contacts, and electrodes are indispensable elements for most applications of flexible, stretchable, and wearable electronics. Current fabrication methods for these metal conductors are mainly based on conventional microfabrication procedures that have been migrated from Si semiconductor industries, which face significant challenges for organic-based compliant substrates. This Research News highlights a recently developed full-solution processing strategy, polymer-assisted metal deposition (PAMD), which is particularly suitable for the roll-to-roll, low-cost fabrication of high-performance compliant metal conductors (Cu, Ni, Ag, and Au) on a wide variety of organic substrates including plastics, elastomers, papers, and textiles. This paper presents i) the principles of PAMD, and how to use it for making ii) flexible, stretchable, and wearable conductive metal electrodes, iii) patterned metal interconnects, and d) 3D stretchable and compressible metal sponges. A critical perspective on this emerging strategy is also provided. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Thin films of polymer blends deposited by matrix-assisted pulsed laser evaporation: Effects of blending ratios

    International Nuclear Information System (INIS)

    Paun, Irina Alexandra; Ion, Valentin; Moldovan, Antoniu; Dinescu, Maria

    2011-01-01

    In this work, we show successful use of matrix-assisted pulsed laser evaporation (MAPLE) for obtaining thin films of PEG:PLGA blends, in the view of their use for controlled drug delivery. In particular, we investigate the influence of the blending ratios on the characteristics of the films. We show that the roughness of the polymeric films is affected by the ratio of each polymer within the blend. In addition, we perform Fourier transformed infrared spectroscopy (FTIR) measurements and we find that the intensities ratios of the infrared absorption bands of the two polymers are consistent with the blending ratios. Finally, we assess the optical constants of the polymeric films by spectroscopic ellipsometry (SE). We point out that the blending ratios exert an influence on the optical characteristics of the films and we validate the SE results by atomic force microscopy and UV-vis spectrophotometry. In all, we stress that the ratios in which the two polymers are blended have significant impact on the morphology, chemical structure and optical characteristics of the polymeric films deposited by MAPLE.

  16. A flexible method for the preparation of thin film samples for in situ TEM characterization combining shadow-FIB milling and electron-beam-assisted etching

    Energy Technology Data Exchange (ETDEWEB)

    Liebig, J.P., E-mail: jan.p.liebig@fau.de [Department of Materials Science and Engineering, Institute I, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Martensstr. 5, 91058 Erlangen (Germany); Göken, M. [Department of Materials Science and Engineering, Institute I, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Martensstr. 5, 91058 Erlangen (Germany); Richter, G. [Max Planck Institute for Intelligent Systems, Heisenbergstr. 3, 70569 Stuttgart (Germany); Mačković, M.; Przybilla, T.; Spiecker, E. [Institute of Micro, and Nanostructure Research & Center for Nanoanalysis and Electron Microscopy (CENEM), Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Cauerstr. 6, 91058 Erlangen (Germany); Pierron, O.N. [G. W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0405 (United States); Merle, B. [Department of Materials Science and Engineering, Institute I, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Martensstr. 5, 91058 Erlangen (Germany)

    2016-12-15

    A new method for the preparation of freestanding thin film samples for mechanical testing in transmission electron microscopes is presented. It is based on a combination of focused ion beam (FIB) milling and electron-beam-assisted etching with xenon difluoride (XeF{sub 2}) precursor gas. The use of the FIB allows for the target preparation of microstructural defects and enables well-defined sample geometries which can be easily adapted in order to meet the requirements of various testing setups. In contrast to existing FIB-based preparation approaches, the area of interest is never exposed to ion beam irradiation which preserves a pristine microstructure. The method can be applied to a wide range of thin film material systems compatible with XeF{sub 2} etching. Its feasibility is demonstrated for gold and alloyed copper thin films and its practical application is discussed. - Highlights: • A new method for the preparation of sub-micron tensile specimens from thin films is presented. • The method is based on the combination of focused ion beam milling and electron-beam-assisted xenon difluoride etching. • It enables the target preparation of individual microstructural defects. • The sample section is protected from ion beam damage by the use of a shadow milling geometry.

  17. Decreased bacterial growth on titanium nanoscale topographies created by ion beam assisted evaporation

    Directory of Open Access Journals (Sweden)

    Stolzoff M

    2017-02-01

    Full Text Available Michelle Stolzoff,1 Jason E Burns,2 Arash Aslani,2 Eric J Tobin,2 Congtin Nguyen,1 Nicholas De La Torre,3 Negar H Golshan,3 Katherine S Ziemer,3 Thomas J Webster1,3,4 1Department of Bioengineering, Northeastern University, Boston, 2N2 Biomedical, Bedford, MA, 3Department of Chemical Engineering, Northeastern University, Boston, MA, USA; 4Center of Excellence for Advanced Materials Research, University of King Abdulaziz, Jeddah, Saudi Arabia Abstract: Titanium is one of the most widely used materials for orthopedic implants, yet it has exhibited significant complications in the short and long term, largely resulting from poor cell–material interactions. Among these many modes of failure, bacterial infection at the site of implantation has become a greater concern with the rise of antibiotic-resistant bacteria. Nanostructured surfaces have been found to prevent bacterial colonization on many surfaces, including nanotextured titanium. In many cases, specific nanoscale roughness values and resulting surface energies have been considered to be “bactericidal”; here, we explore the use of ion beam evaporation as a novel technique to create nanoscale topographical features that can reduce bacterial density. Specifically, we investigated the relationship between the roughness and titanium nanofeature shapes and sizes, in which smaller, more regularly spaced nanofeatures (specifically 40–50 nm tall peaks spaced ~0.25 µm apart were found to have more effect than surfaces with high roughness values alone. Keywords: titanium, nanostructures, bacteria, bone ingrowth, surface roughness, IBAD 

  18. Two-color beam improvement of the colloidal particle lens array assisted surface nanostructuring

    Energy Technology Data Exchange (ETDEWEB)

    Afanasiev, Andrei; Bredikhin, Vladimir; Pikulin, Alexander; Ilyakov, Igor; Shishkin, Boris; Akhmedzhanov, Rinat; Bityurin, Nikita, E-mail: bit@ufp.appl.sci-nnov.ru [Institute of Applied Physics of Russian Academy of Scienses, 46, Ul' yanov St., Nizhniy Novgorod 603950 (Russian Federation)

    2015-05-04

    We consider laser nanostructuring of the material surface by means of a colloidal particle lens array. Here, the monolayer of dielectric micro- or nanospheres placed on the surface acts as an array of near-field lenses that focus the laser radiation into the multitude of distinct spots, allowing the formation of many structures in a single stage. We show that conversion of a small part of the energy of the femtosecond beam into the second harmonic (SH) is an efficient way to increase the surface density of obtained nanostructures. By combining the fundamental frequency and the SH, one benefits both from the power of the former and from the focusing ability of the latter. This combination provides an efficient nanostructuring with sphere diameter close to the wavelength of the second harmonic. The possibility to create arrays of nanostructures with surface density above 5×10{sup 8} cm{sup −2} with femtosecond Ti:sapphire laser operating at 800 nm was demonstrated by employing 0.45 μm spheres.

  19. Hydrogen assisted stress-cracking behaviour of electron beam welded supermartensitic stainless steel weldments

    International Nuclear Information System (INIS)

    Bala Srinivasan, P.; Sharkawy, S.W.; Dietzel, W.

    2004-01-01

    Supermartensitic stainless steel (SMSS) grades are gaining popularity as an alternate material to duplex and super duplex stainless steels for applications in oil and gas industries. The weldability of these steels, though reported to be better when compared to conventional martensitic stainless steels, so far has been addressed with duplex stainless steel electrodes/fillers. This work addresses the stress-cracking behaviour of weldments of a high-grade supermartensitic stainless steel (11% Cr, 6.5% Ni and 2% Mo) in the presence of hydrogen. Welds were produced with matching consumables, using electron beam welding (EBW) process. Weldments were subjected to slow strain rate tests in 0.1 M NaOH solution, with introduction of hydrogen into the specimens by means of potentiostatic cathodic polarisation at a potential of -1200 mV versus Ag/AgCl electrode. Reference tests were performed in air for comparison, and the results suggest that both the SMSS base material and the EB weld metal are susceptible to embrittlement under the conditions of hydrogen charging

  20. Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Tchernycheva, M; Harmand, J C; Patriarche, G; Travers, L; Cirlin, G E

    2006-01-01

    Molecular beam epitaxial growth of GaAs nanowires using Au particles as a catalyst was investigated. Prior to the growth during annealing, Au alloyed with Ga coming from the GaAs substrate, and melted. Phase transitions of the resulting particles were observed in situ by reflection high-energy electron diffraction (RHEED). The temperature domain in which GaAs nanowire growth is possible was determined. The lower limit of this domain (320 deg. C) is close to the observed catalyst solidification temperature. Below this temperature, the catalyst is buried by GaAs growth. Above the higher limit (620 deg. C), the catalyst segregates on the surface with no significant nanowire formation. Inside this domain, the influence of growth temperature on the nanowire morphology and crystalline structure was investigated in detail by scanning electron microscopy and transmission electron microscopy. The correlation of the nanowire morphology with the RHEED patterns observed during the growth was established. Wurtzite GaAs was found to be the dominant crystal structure of the wires

  1. Influence of plasma-induced energy deposition effects, the equation of state, thermal ionization, pulse shaping, and radiation on ion-beam-driven expansions of plane metal targets

    International Nuclear Information System (INIS)

    Long, K.A.; Tahir, N.A.

    1986-01-01

    In a previous paper by Long and Tahir [Phys. Fluids 29, 275 (1986)], the motion of plane targets irradiated by ion beams whose energy deposition was assumed to be independent of the ion energy, and the temperature and density of the plasma, was analyzed. In this paper, the analytic solution is extended in order to include the effects of a temperature-and density-dependent energy deposition as a result of electron excitation, an improved equation of state, thermal ionization, a pulse shape, and radiation losses. The change in the energy deposition with temperature and density leads to range shortening and an increased power deposition in the target. It is shown how the analytic theory can be used to analyze experiments to measure the enhanced energy deposition. In order to further analyze experiments, numerical simulations are presented which include the plasma-induced effects on the energy deposition. It is shown that since the change in the range is due to both decrease in density and the increase in temperature, it is not possible to separate these two effects in present experiments. Therefore, the experiments which measure the time-dependent energy of the ions emerging from the back side of a plane target do not as yet measure the energy loss as a function of the density and temperature of the plasma or of the energy of the ion, but only an averaged loss over certain ranges of these physical quantities

  2. Thermoelectric properties of bismuth antimony tellurium thin films through bilayer annealing prepared by ion beam sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Zhuang-hao [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Fan, Ping, E-mail: fanping308@126.com [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Luo, Jing-ting [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Cai, Xing-min; Liang, Guang-xing; Zhang, Dong-ping [College of Physics Science and Technology, Shenzhen University, 518060 (China); Ye, Fan [Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China)

    2014-07-01

    Bismuth antimony tellurium is one of the most important tellurium-based materials for high-efficient thermoelectric application. In this paper, ion beam sputtering was used to deposit Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films on borosilicate substrates at room-temperature. Then the bismuth antimony tellurium thin films were synthesized via post thermal treatment of the Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films. The effect of annealing temperature and compositions on the thermoelectric properties of the thin films was investigated. After the thin films were annealed from 150 °C to 350 °C for 1 h in the high vacuum condition, the Seebeck coefficient changed from a negative sign to a positive sign. The X-ray diffraction results showed that the synthesized tellurium-based thermoelectric thin film exhibited various alloys phases, which contributed different thermoelectricity conductivity to the synthesized thin film. The overall Seebeck coefficient of the synthesized thin film changed from negative sign to positive sign, which was due to the change of the primary phase of the tellurium-based materials at different annealing conditions. Similarly, the thermoelectric properties of the films were also associated with the grown phase. High-quality thin film with the Seebeck coefficient of 240 μV K{sup −1} and the power factor of 2.67 × 10{sup −3} Wm{sup −1} K{sup −2} showed a single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase when the Sb/Te thin film sputtering time was 40 min. - Highlights: • Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} thermoelectric thin films synthesized via bilayer annealing • The film has single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase with best thermoelectric performance. • The film has high thermoelectric properties comparable with other best results.

  3. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    Science.gov (United States)

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  4. Variations in the microstructure of nickel-based alloy coatings with the metalloids boron and silicon as a function of deposition parameters in a dual beam ion system

    International Nuclear Information System (INIS)

    Panitz, J.K.G.

    1986-01-01

    We have deposited coatings using a dual beam ion source system with two different targets as sputtering sources; (i) a predominantly amorphous Ni/sub 63.5/Cr/sub 12.3/Fe/sub 3.5/Si/sub 7.9/B/sub 12.8/ foil and (ii) a crystalline Ni/sub 55.3/Cr/sub 16.9/Si/sub 7.2/B/sub 21.6/ slab from a casting. Amorphous coatings were produced by the foil for all conditions studied. The coatings that were deposited from the slab target that were less than 400 nm in thickness which were deposited at rates from 8--50 nm/min appeared to be amorphous. The thicker (>400 nm) coatings and the extremely low deposition rate (2 nm/min) coatings produced by the slab comprised both partially polycrystalline and amorphous material. All of the coatings studied exhibited inferior wear and erosion resistance properties compared to iron-based amorphous metal coatings containing Ti, C, or N, which have been studied by other groups. However, the corrosion resistance to 4 N HCl is good, ranging from less than 0.01 to 0.22 mm/yr as a function of deposition rate, concurrent ion bombardment conditions, and coating thickness

  5. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  6. Roles of kinetics and energetics in the growth of AlN by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Im, I. H.; Minegishi, T.; Hanada, T.; Lee, S. W.; Cho, M. W.; Yao, T.; Oh, D. C.; Chang, J. H.

    2006-01-01

    The roles of kinetics and energetics in the growth processes of AlN on c-sapphire by plasma assisted molecular beam epitaxy are investigated by varying the growth rate from 1 to 31 A/min and the substrate temperature from 800 to 1000 .deg. C. The energetics is found to govern the growth of AlN in the low-growth rate region even at a low substrate temperature of 800 .deg. C owing to the enhanced residence time of adatoms, thereby increasing the surface migration length. As the growth rate increases, the growth tends to be governed by kinetics because of a reduction in the residence time of adatoms. Consequently, the surface roughness and crystal quality are greatly improved for the low-growth-rate case. In addition, the lattice strain relaxation is completed from the beginning of epitaxy for energetics-limiting growth while lattice strain relaxation is retarded for kinetics-limiting growth because of pre-existing partial strain relaxation. Energetics becomes more favorable as the substrate temperature is raised because of an increase in the surface diffusion length owing to an enhanced diffusion coefficient. Consequently high-crystal-quality AlN layers are grown under the energetics-limiting growth condition with a screw dislocation density of 7.4 x 10 8 cm -2 even for a thin 42-nm thick film.

  7. Electron beam assisted synthesis of silver nanoparticle in chitosan stabilizer: Preparation, stability and inhibition of building fungi studies

    Science.gov (United States)

    Jannoo, Kanokwan; Teerapatsakul, Churapa; Punyanut, Adisak; Pasanphan, Wanvimol

    2015-07-01

    Silver nanoparticles (AgNPs) in chitosan (CS) stabilizer were successfully synthesized using electron beam irradiation. The effects of irradiation dose, molecular weight (MW) of CS stabilizer, concentration of AgNO3 precursor and addition of tert-butanol on AgNPs production were studied. The stability of the AgNPs under different temperatures and storage times were also investigated. The AgNPs formation in CS was observed using UV-vis, FT-IR and XRD. The characteristic surface plasmon resonance (SPR) of the obtained AgNPs was around 418 nm. The CS stabilizer and its MW, AgNO3 precursor and irradiation doses are important parameters for the synthesis of AgNPs. The optimum addition of 20% v/v tert-butanol could assist the formation of AgNPs. The AgNPs in CS stabilizer were stable over a period of one year when the samples were kept at 5 °C. The AgNPs observed from TEM images were spherical with an average particle size in the range of 5-20 nm depending on the irradiation doses. The AgNPs in CS solution effectively inhibited the growth of several fungi, i.e., Curvularia lunata, Trichoderma sp., Penicillium sp. and Aspergillus niger, which commonly found on the building surface.

  8. Dynamic nano-imaging of label-free living cells using electron beam excitation-assisted optical microscope

    Science.gov (United States)

    Fukuta, Masahiro; Kanamori, Satoshi; Furukawa, Taichi; Nawa, Yasunori; Inami, Wataru; Lin, Sheng; Kawata, Yoshimasa; Terakawa, Susumu

    2015-01-01

    Optical microscopes are effective tools for cellular function analysis because biological cells can be observed non-destructively and non-invasively in the living state in either water or atmosphere condition. Label-free optical imaging technique such as phase-contrast microscopy has been analysed many cellular functions, and it is essential technology for bioscience field. However, the diffraction limit of light makes it is difficult to image nano-structures in a label-free living cell, for example the endoplasmic reticulum, the Golgi body and the localization of proteins. Here we demonstrate the dynamic imaging of a label-free cell with high spatial resolution by using an electron beam excitation-assisted optical (EXA) microscope. We observed the dynamic movement of the nucleus and nano-scale granules in living cells with better than 100 nm spatial resolution and a signal-to-noise ratio (SNR) around 10. Our results contribute to the development of cellular function analysis and open up new bioscience applications. PMID:26525841

  9. Dynamic nano-imaging of label-free living cells using electron beam excitation-assisted optical microscope.

    Science.gov (United States)

    Fukuta, Masahiro; Kanamori, Satoshi; Furukawa, Taichi; Nawa, Yasunori; Inami, Wataru; Lin, Sheng; Kawata, Yoshimasa; Terakawa, Susumu

    2015-11-03

    Optical microscopes are effective tools for cellular function analysis because biological cells can be observed non-destructively and non-invasively in the living state in either water or atmosphere condition. Label-free optical imaging technique such as phase-contrast microscopy has been analysed many cellular functions, and it is essential technology for bioscience field. However, the diffraction limit of light makes it is difficult to image nano-structures in a label-free living cell, for example the endoplasmic reticulum, the Golgi body and the localization of proteins. Here we demonstrate the dynamic imaging of a label-free cell with high spatial resolution by using an electron beam excitation-assisted optical (EXA) microscope. We observed the dynamic movement of the nucleus and nano-scale granules in living cells with better than 100 nm spatial resolution and a signal-to-noise ratio (SNR) around 10. Our results contribute to the development of cellular function analysis and open up new bioscience applications.

  10. Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

    Science.gov (United States)

    Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

    2016-11-24

    Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

  11. Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Chung, Yee Ling; Peng Xingyu; Liao, Ying Chieh; Yao Shude; Chen, Li Chyong; Chen, Kuei Hsien; Feng, Zhe Chuan

    2011-01-01

    A series of InN thin films was grown on sapphire substrates via plasma-assisted molecular beam epitaxy (PA-MBE) with different nitrogen plasma power. Various characterization techniques, including Hall, photoluminescence, Raman scattering and Rutherford backscattering, have been employed to study these InN films. Good crystalline wurtzite structures have been identified for all PA-MBE grown InN films on sapphire substrate, which have narrower XRD wurtzite (0002) peaks, showed c-axis Raman scattering allowed longitudinal optical (LO) modes of A 1 and E 1 plus E 2 symmetry, and very weak backscattering forbidden transverse optical (TO) modes. The lower plasma power can lead to the lower carrier concentration, to have the InN film close to intrinsic material with the PL emission below 0.70 eV. With increasing the plasma power, high carrier concentration beyond 1 x 10 20 cm -3 can be obtained, keeping good crystalline perfection. Rutherford backscattering confirmed most of InN films keeping stoichiometrical In/N ratios and only with higher plasma power of 400 W leaded to obvious surface effect and interdiffusion between the substrate and InN film.

  12. Characterization and in situ fluorescence diagnostic of the deposition of YBa2Cu3O7-x thin films by pseudo-spark electron beam ablation

    International Nuclear Information System (INIS)

    Jiang, Q.D.; Matacotta, F.C.; Masciarelli, G.; Fuso, F.; Arimondo, E.; Sandrin, G.

    1992-12-01

    The pseudo-spark electron beam ablation (PSA) technique is a comparatively simple and inexpensive method to deposit thin films of oxide materials. The effect of the electron beam power density on the efficiency of the PSA is studied. Results concerning the optimization of the deposition process of high quality superconducting YBa 2 Cu 3 O 7-x thin films on single crystal SrTiO 3 substrates are reported. Correlation between processing parameters and superconducting properties of the thin films are presented: in particular, the effects of the break-down voltage of the pseudo-spark and geometrical arrangement of the target-substrate-beam system on the T c of the resulting films. In situ spectral analysis of the radiative emission from the plasma plume has been performed at different distances from the surface of the target and at different break-down voltages of the pseudo-spark. The role of the oxygen pressure in the PSA process, which could be one order of magnitude less than that for a typical laser ablation system, is discussed. (author). 17 refs, 7 figs, 1 tab

  13. Direct writing of gold nanostructures with an electron beam: On the way to pure nanostructures by combining optimized deposition with oxygen-plasma treatment

    Directory of Open Access Journals (Sweden)

    Domagoj Belić

    2017-11-01

    Full Text Available This work presents a highly effective approach for the chemical purification of directly written 2D and 3D gold nanostructures suitable for plasmonics, biomolecule immobilisation, and nanoelectronics. Gold nano- and microstructures can be fabricated by one-step direct-write lithography process using focused electron beam induced deposition (FEBID. Typically, as-deposited gold nanostructures suffer from a low Au content and unacceptably high carbon contamination. We show that the undesirable carbon contamination can be diminished using a two-step process – a combination of optimized deposition followed by appropriate postdeposition cleaning. Starting from the common metal-organic precursor Me2-Au-tfac, it is demonstrated that the Au content in pristine FEBID nanostructures can be increased from 30 atom % to as much as 72 atom %, depending on the sustained electron beam dose. As a second step, oxygen-plasma treatment is established to further enhance the Au content in the structures, while preserving their morphology to a high degree. This two-step process represents a simple, feasible and high-throughput method for direct writing of purer gold nanostructures that can enable their future use for demanding applications.

  14. Direct formation of thin films and epitaxial overlayers at low temperatures using a low-energy (10-500 eV) ion beam deposition system

    International Nuclear Information System (INIS)

    Zuhr, R.A.; Alton, G.D.; Appleton, B.R.; Herbots, N.; Noggle, T.S.; Pennycook, S.J.

    1987-01-01

    A low-energy ion beam deposition system has been developed at Oak Ridge National Laboratory and has been applied successfully to the growth of epitaxial films at low temperatures for a number of different elements. The deposition system utilizes the ion source and optics of a commercial ion implantation accelerator. The 35 keV mass- and energy-analyzed ion beam from the accelerator is decelerated in a four-element electrostatic lens assembly to energies between 10 and 500 eV for direct deposition onto a target under UHV conditions. Current densities on the order of 10 μA/cm 2 are achieved with good uniformity over a 1.4 cm diameter spot. The completed films are characterized by Rutherford backscattering, ion channeling, cross-section transmission electron microscopy, and x-ray diffraction. The effects of substrate temperature, ion energy, and substrate cleaning have been studied. Epitaxial overlayers which show good minimum yields by ion channeling (3 to 4%) have been produced at temperatures as low as 375 0 C for Si on Si(100) and 250 0 C for Ge on Ge(100) at growth rates that exceed the solid-phase epitaxy rates at these temperatures by more than an order of magnitude

  15. Structural properties and surface wettability of Cu-containing diamond-like carbon films prepared by a hybrid linear ion beam deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Peng; Sun, Lili; Li, Xiaowei [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Xu, Sheng [Gao Hong Coating Technology Co., Ltd, Huzhou 313000 (China); Ke, Peiling [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Wang, Aiying, E-mail: aywang@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2015-06-01

    Cu-containing diamond-like carbon (Cu-DLC) films were deposited on Si/glass substrate by a hybrid ion beam deposition system. The Cu concentration (0.1–39.7 at.%) in the film was controlled by varying the sputtering current. The microstructure and composition of Cu-DLC films were investigated systematically. The surface topography, roughness and surface wettability of the films were also studied. Results indicated that with increasing the Cu concentration, the water contact angle of the films changed from 66.8° for pure carbon film to more than 104.4° for Cu-DLC films with Cu concentration larger than 24.4 at.%. In the hydrophilic region, the polar surface energy decreased from 30.54 mJ/m{sup 2} for pure carbon film to 2.48 mJ/m{sup 2} for the film with Cu 7.0 at.%. - Highlights: • Cu-containing diamond-like carbon (DLC) films were deposited by a hybrid ion beam system. • Cu-containing DLC films exhibited a wide range of water contact angle. • The water contact angles vary with the surface energies and surface roughness.

  16. Sm-doped CeO2 single buffer layer for YBCO coated conductors by polymer assisted chemical solution deposition (PACSD) method

    International Nuclear Information System (INIS)

    Li, G.; Pu, M.H.; Sun, R.P.; Wang, W.T.; Wu, W.; Zhang, X.; Yang, Y.; Cheng, C.H.; Zhao, Y.

    2008-01-01

    An over 150 nm thick Sm 0.2 Ce 0.8 O 1.9-x (SCO) single buffer layer has been deposited on bi-axially textured NiW (2 0 0) alloy substrate. Highly in-plane and out-of-plane oriented, dense, smooth and crack free SCO single layer has been obtained via a polymer-assisted chemical solution deposition (PACSD) approach. YBCO thin film has been deposited equally via a PACSD route on the SCO-buffered NiW, the as grown YBCO yielding a sharp transition at T c0 = 87 K as well as J c (0 T, 77 K) ∼ 1 MA/cm 2 . These results indicates that RE (lanthanides other than Ce) doping may be an effective approach to improve the critical thickness of solution derived CeO 2 film, which renders it a promising candidate as single buffer layer for YBCO coated conductors

  17. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  18. Preliminary investigation of anomalous relativistic electron beam deposition into a 1017 to 1020 cm-3 density plasma

    International Nuclear Information System (INIS)

    Thode, L.E.

    1978-04-01

    Based upon recent theoretical and experimental advances, the potential for using a 10 to 30 MeV electron beam to heat a 10 17 to 10 20 cm -3 density plasma has been investigated. Taking into account anode foil scattering, external magnetic field strength, electron-ion collision rate, beam self-magnetic field discontinuity, and plasma temperature, a coupling efficiency of 15 to 50% is achievable for such a plasma. Moreover, the beam generator requirements seem to be within present pulse power technology

  19. Pulsed laser-assisted focused electron-beam-induced etching of titanium with XeF2: enhanced reaction rate and precursor transport.

    Science.gov (United States)

    Noh, J H; Fowlkes, J D; Timilsina, R; Stanford, M G; Lewis, B B; Rack, P D

    2015-02-25

    In order to enhance the etch rate of electron-beam-induced etching, we introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. The evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. The increased etch rate is attributed to photothermally enhanced Ti-F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.

  20. Ultraviolet optical and microstructural properties of MgF2 and LaF3 coatings deposited by ion-beam sputtering and boat and electron-beam evaporation

    Science.gov (United States)

    Ristau, Detlev; Gunster, Stefan; Bosch, Salvador; Duparre, Angela; Masetti, Enrico; Ferre-Borrull, Josep; Kiriakidis, George; Peiro, Francesca; Quesnel, Etienne; Tikhonravov, Alexander

    2002-06-01

    Single layers of MgF2 and LaF3 were deposited upon superpolished fused-silica and CaF2 substrates by ion-beam sputtering (IBS) as well as by boat and electron beam (e-beam) evaporation and were characterized by a variety of complementary analytical techniques. Besides undergoing photometric and ellipsometric inspection, the samples were investigated at 193 and 633 nm by an optical scatter measurement facility. The structural properties were assessed with atomic-force microscopy, x-ray diffraction, TEM techniques that involved conventional thinning methods for the layers. For measurement of mechanical stress in the coatings, special silicon substrates were coated and analyzed. The dispersion behavior of both deposition materials, which was determined on the basis of various independent photometric measurements and data reduction techniques, is in good agreement with that published in the literature and with the bulk properties of the materials. The refractive indices of the MgF2 coatings ranged from 1.415 to 1.440 for the wavelength of the ArF excimer laser (193 nm) and from 1.435 to 1.465 for the wavelength of the F2 excimer laser (157 nm). For single layers of LaF3 the refractive indices extended from 1.67 to 1.70 at 193 nm to approx1.80 at 157 nm. The IBS process achieves the best homogeneity and the lowest surface roughness values (close to 1 nmrms) of the processes compared in the joint experiment. In contrast to MgF2 boat and e-beam evaporated coatings, which exhibit tensile mechanical stress ranging from 300 to 400 MPa, IBS coatings exhibit high compressive stress of as much as 910 MPa. A similar tendency was found for coating stress in LaF3 single layers. Experimental results are discussed with respect to the microstructural and compositional properties as well as to the surface topography of the coatings.