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Sample records for beam assisted deposition

  1. Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Yu Zhinong; Li Yuqiong; Xia Fan; Zhao Zhiwei; Xue Wei

    2009-01-01

    The optical, electrical and mechanical properties of indium tin oxide (ITO) films prepared on polyethylene terephthalate (PET) substrates by ion beam assisted deposition at room temperature were investigated. The properties of ITO films can be improved by introducing a buffer layer of silicon dioxide (SiO 2 ) between the ITO film and the PET substrate. ITO films deposited on SiO 2 -coated PET have better crystallinity, lower electrical resistivity, and improved resistance stability under bending than those deposited on bare PET. The average transmittance and the resistivity of ITO films deposited on SiO 2 -coated PET are 85% and 0.90 x 10 -3 Ω cm, respectively, and when the films are bent, the resistance remains almost constant until a bending radius of 1 cm and it increases slowly under a given bending radius with an increase of the bending cycles. The improved resistance stability of ITO films deposited on SiO 2 -coated PET is mainly attributed to the perfect adhesion of ITO films induced by the SiO 2 buffer layer.

  2. Ion assistance effects on electron beam deposited MgF sub 2 films

    CERN Document Server

    Alvisi, M; Della Patria, A; Di Giulio, M; Masetti, E; Perrone, M R; Protopapa, M L; Tepore, A

    2002-01-01

    Thin films of MgF sub 2 have been deposited by the ion-assisted electron-beam evaporation technique in order to find out the ion beam parameters leading to films of high laser damage threshold whose optical properties are stable under uncontrolled atmosphere conditions. It has been found that the ion-assisted electron-beam evaporation technique allows getting films with optical properties (refraction index and extinction coefficient) of high environmental stability by properly choosing the ion-source voltage and current. But, the laser damage fluence at 308 nm was quite dependent on the assisting ion beam parameters. Larger laser damage fluences have been found for the films deposited by using assisting ion beams delivered at lower anode voltage and current values. It has also been found that the films deposited without ion assistance were characterized by the highest laser damage fluence (5.9 J/cm sup 2) and the lowest environmental stability. The scanning electron microscopy analysis of the irradiated areas...

  3. Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

    International Nuclear Information System (INIS)

    Bae, J.W.; Kim, J.S.; Yeom, G.Y.

    2001-01-01

    Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90 deg. C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cmx20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%

  4. Optimization of ion assist beam deposition of magnesium oxide template films during initial nucleation and growth

    Energy Technology Data Exchange (ETDEWEB)

    Groves, James R [Los Alamos National Laboratory; Matias, Vladimir [Los Alamos National Laboratory; Stan, Liliana [Los Alamos National Laboratory; De Paula, Raymond F [Los Alamos National Laboratory; Hammond, Robert H [STANFORD UNIV.; Clemens, Bruce M [STANFOED UNIV.

    2010-01-01

    Recent efforts in investigating the mechanism of ion beam assisted deposition (IBAD) of biaxially textured thin films of magnesium oxide (MgO) template layers have shown that the texture develops suddenly during the initial 2 nm of deposition. To help understand and tune the behavior during this initial stage, we pre-deposited thin layers of MgO with no ion assist prior to IBAD growth of MgO. We found that biaxial texture develops for pre-deposited thicknesses < 2 nm, and that the thinnest layer tested, at 1 nm, resulted in the best qualitative RHEED image, indicative of good biaxial texture development. The texture developed during IBAD growth on the 1.5 nm pre-deposited layer is slightly worse and IBAD growth on the 2 nm pre-deposited layer produces a fiber texture. Application of these layers on an Al{sub 2}O{sub 3} starting surface, which has been shown to impede texture development, improves the overall quality of the IBAD MgO and has some of the characteristics of a biaxially texture RHEED pattern. It is suggested that the use of thin (<2 nm) pre-deposited layers may eliminate the need for bed layers like Si{sub 3}N{sub 4} and Y{sub 2}O{sub 3} that are currently thought to be required for proper biaxial texture development in IBAD MgO.

  5. Corrosion properties of aluminium coatings deposited on sintered NdFeB by ion-beam-assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mao Shoudong; Yang Hengxiu; Li Jinlong; Huang Feng [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 519 Zhuangshi Road, Ningbo 315201 (China); Song Zhenlun, E-mail: songzhenlun@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 519 Zhuangshi Road, Ningbo 315201 (China)

    2011-04-15

    Pure Al coatings were deposited by direct current (DC) magnetron sputtering to protect sintered NdFeB magnets. The effects of Ar{sup +} ion-beam-assisted deposition (IBAD) on the structure and the corrosion behaviour of Al coatings were investigated. The Al coating prepared by DC magnetron sputtering with IBAD (IBAD-Al-coating) had fewer voids than the coating without IBAD (Al-coating). The corrosion behaviour of the Al-coated NdFeB specimens was investigated by potentiodynamic polarisation, a neutral salt spray (NSS) test, and electrochemical impedance spectroscopy (EIS). The pitting corrosion of the Al coatings always began at the voids of the grain boundaries. Bombardment by the Ar{sup +} ion-beams effectively improved the corrosion resistance of the IBAD-Al-coating.

  6. Ion mass and energy selective hyperthermal ion-beam assisted deposition setup

    Science.gov (United States)

    Gerlach, J. W.; Schumacher, P.; Mensing, M.; Rauschenbach, S.; Cermak, I.; Rauschenbach, B.

    2017-06-01

    For the synthesis of high-quality thin films, ion-beam assisted deposition (IBAD) is a frequently used technique providing precise control over several substantial film properties. IBAD typically relies on the use of a broad-beam ion source. Such ion sources suffer from the limitation that they deliver a blend of ions with different ion masses, each of them possessing a certain distribution of kinetic energy. In this paper, a compact experimental setup is presented that enables the separate control of ion mass and ion kinetic energy in the region of hyperthermal energies (few 1 eV - few 100 eV). This ion energy region is of increasing interest not only for ion-assisted film growth but also for the wide field of preparative mass spectrometry. The setup consists of a constricted glow-discharge plasma beam source and a tailor-made, compact quadrupole system equipped with entry and exit ion optics. It is demonstrated that the separation of monoatomic and polyatomic nitrogen ions (N+ and N2+) is accomplished. For both ion species, the kinetic energy is shown to be selectable in the region of hyperthermal energies. At the sample position, ion current densities are found to be in the order of 1 μA/cm2 and the full width at half maximum of the ion beam profile is in the order of 10 mm. Thus, the requirements for homogeneous deposition processes in sufficiently short periods of time are fulfilled. Finally, employing the described setup, for the first time in practice epitaxial GaN films were deposited. This opens up the opportunity to fundamentally study the influence of the simultaneous irradiation with hyperthermal ions on the thin film growth in IBAD processes and to increase the flexibility of the technique.

  7. Optical thin film formation by gas-cluster ion beam assisted deposition

    International Nuclear Information System (INIS)

    Katsumata, H.; Matsuo, J.; Nishihara, T.; Minami, E.; Yamada, I.; Tachibana, T.; Yamada, K.; Adachi, M.

    1999-01-01

    We have developed a gas cluster ion beam assisted deposition system for high-quality optical thin film formation (SiO 2 and TiO 2 etc.) with high packing density. Cluster ions can transport thousands of atoms per ion with very low energy per constituent atoms. Consequently, densification of films, which is commonly required for optical coatings, can be achieved without the introduction of increased surface roughness and irradiation-induced defects, which are critical issues for conventional ion assisted deposition processes. In this work maximizing the intensity of gas-cluster ion beam current is discussed based upon a few experiments increasing the neutral cluster beam intensity and designing an ionizer for achieving an efficient transportation of the cluster ion beam. As a result, we successfully obtained a high intensity gas-cluster ion current up to ∼30 μA, which is one order of magnitude larger than that obtained so far. TiO 2 films were grown on Si substrates by electron beam evaporation of TiO 2 at ambient temperature under O 2 -cluster ion bombardment with acceleration energies (V acc ) up to 12 keV. Refractive index, n of the films was increased steeply to n=∼2.30 above V acc =4 keV. Water-soaking tests for 12 hrs of the samples revealed that an increase in n values due to moisture absorption becomes smaller with increasing V acc , which suggests that the films become more dense with increasing V acc from optical point of view

  8. Ion-Beam-Assisted Deposition of MoS2 and Other Low-Friction Films

    National Research Council Canada - National Science Library

    Bolster, Robert

    1992-01-01

    .... The apparatus used and some of the techniques involved are described. Ion source operating parameters were optimized and the assist beam ion flux was quantified and found to follow a power-law relationship with beam power...

  9. The suggestion of droplets generation prevention method of CNx coating by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Yagi, Yuji; Tokoroyama, Takayuki; Kousaka, Hiroyuki; Umehara, Noritsugu; Fuwa, Yoshio; Manabe, Kazuyoshi

    2013-01-01

    It has been reported that the carbon nitride (CNx) coating was the super-low friction in which friction coefficient was less than 0.01, and it attracts attention as a high wear resistance and low friction material. When synthesizing a CNx coating with Ion Beam Assisted Deposition (IBAD) method, it was clear that the small asperities called droplets was generated onto the CNx coating surface with increasing thickness, and these droplets generated high friction. Therefore, it is necessary to clarify droplets generation mechanism to reduce droplets. To establish optimal coating conditions for controlling droplets were clarified by paying attention to the energy of an electron beam and the shape of a carbon target. First of all, 300 nm thickness CNx coatings were synthesized with five different filament current densities to clarify the relationship between the filament current density and droplet heights. Secondly, the effect of carbon target shape on droplets generation was confirmed with normal and processed carbon target. Finally, friction coefficient of these surfaces was measured by friction tests under PAO lubrication. (author)

  10. Ion-beam assisted deposition of C-, Ti-, Zr-, Mo-based thin films on silicon substrate

    International Nuclear Information System (INIS)

    Tashlykov, I.S.; Vesh, V.; Vendler, Eh.

    2004-01-01

    With the help pf RBS/channeling method and scattering spectrum computer simulation C-, Ti-, Zr- and Mo-based coatings deposited by ion beam assisted deposition technique on Si substrate have been investigated. Si, O, C, and H atoms were found to be incorporated into the coatings composition. Radiation damage of silicon near the coating-substrate interface region does not depend on the mass of bombarding ions [ru

  11. Improved stability of organic light-emitting diode with aluminum cathodes prepared by ion beam assisted deposition

    Directory of Open Access Journals (Sweden)

    Soon Moon Jeong, Deuk Yeon Lee, Won Hoe Koo, Sang Hun Choi, Hong Koo Baik, Se-Jong Lee and Kie Moon Song

    2005-01-01

    Full Text Available We have fabricated highly stable organic electroluminescent devices based on spin-coated poly-p-phenylene-vynylene (PPV thin films. The electrical properties of aluminum cathode, prepared by ion beam assisted deposition, on PPV have been investigated and compared to those by thermal evaporation. Although energetic particles of Al assisted by Ar+ ion may damage the organic material, I–V–L characteristics are improved by applying thin Al buffer layer. In addition, a dense Al cathode inhibits the permeation of H2O and O2 into PPV film through pinhole defects, and thus retards dark spot growth. It may be deduced from highly packed structure of Al cathode with an increase in the contact area between Al and PPV that reduce the contact resistance. In conclusion, the lifetime of organic light-emitting device (OLED has been extended effectively by dense Al film through ion beam assisted deposition process.

  12. Application of Taguchi Method to the Optimization of a-C:H Coatings Deposited Using Ion Beam Assisted Physical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    W. H. Kao

    2015-02-01

    Full Text Available The Taguchi design method is used to optimize the adhesion, hardness, and wear resistance properties of a-C:H coatings deposited on AISI M2 steel substrates using the ion beam assisted physical vapor deposition method. The adhesion strength of the coatings is evaluated by means of scratch tests, while the hardness is measured using a nanoindentation tester. Finally, the wear resistance is evaluated by performing cyclic ball-on-disc wear tests. The Taguchi experimental results show that the optimal deposition parameters are as follows: a substrate bias voltage of 90 V, an ion beam voltage of 1 kV, an acetylene flow rate of 21 sccm, and a working distance of 7 cm. Given these optimal processing conditions, the a-C:H coating has a critical load of 99.8 N, a hardness of 25.5 GPa, and a wear rate of 0.4 × 10−6 mm3/Nm.

  13. Corrosion-resistant titanium nitride coatings formed on stainless steel by ion-beam-assisted deposition

    International Nuclear Information System (INIS)

    Baba, K.; Hatada, R.

    1994-01-01

    Titanium films 70nm thick were deposited on austenitic type 316L stainless steel substrates, and these specimens were irradiated with titanium ions of energy 70kV at a fluence of 1x10 17 ioncm -2 , using a metal vapor vacuum arc (MEVVA) IV metallic ion source at room temperature. After irradiation, titanium nitride (TiN) films were deposited by titanium evaporation and simultaneous irradiation by a nitrogen ion beam, with transport ratios of Ti to N atoms from 0.5 to 10.0 and an ion acceleration voltage of 2kV. The preferred orientation of the TiN films varied from left angle 200 right angle to left angle 111 right angle normal to the surface when the transport ratio was increased. With the help of Auger electron spectroscopy, interfacial mixing was verified. Nitrogen atoms were present in the state of titanium nitride for all transport ratios from 0.5 up to 10.0. However, the chemical bonding state of titanium changed from titanium nitride to the metallic state with increasing transport ratio Ti/N. The corrosion behavior was evaluated in an aqueous solution of sulfuric acid saturated with oxygen, using multisweep cyclic voltammetry measurements. Thin film deposition of pure titanium and titanium implantation prior to TiN deposition have beneficial effects on the suppression of transpassive chromium dissolution. ((orig.))

  14. Highly flexible transparent and conductive ZnS/Ag/ZnS multilayer films prepared by ion beam assisted deposition

    Science.gov (United States)

    Yu, Zhinong; Leng, Jian; Xue, Wei; Zhang, Ting; Jiang, Yurong; Zhang, Jie; Zhang, Dongpu

    2012-01-01

    ZnS/Ag/ZnS (ZAZ) multilayer films were prepared on polyethene terephthalate (PET) by ion beam assisted deposition at room temperature. The structural, optical and electrical characteristics of ZAZ multilayers dependent on the thickness of silver layer were investigated. The ZAZ multilayers exhibit a low sheet resistance of about 10 Ω/sq., a high transmittance of 92.1%, and the improved resistance stabilities when subjected to bending. When the inserted Ag thickness is over 12 nm, the ZAZ multilayers show good resistance stabilities due to the existence of a ductile Ag metal layer. The results suggest that ZAZ film has better optoelectrical and anti-deflection characteristics than conventional indium tin oxide (ITO) single layer.

  15. Mechanical and tribological properties of carbon thin film with tungsten interlayer prepared by Ion beam assisted deposition

    Czech Academy of Sciences Publication Activity Database

    Vlčák, P.; Černý, F.; Tolde, Z.; Sepitka, J.; Gregora, Ivan; Daniš, S.

    2013-01-01

    Roč. 2013, FEB (2013) ISSN 2314-4874 Institutional support: RVO:68378271 Keywords : carbon coatings * ion beam deposition * XRD * nanoindentation Subject RIV: BM - Solid Matter Physics ; Magnetism http://dx.doi.org/10.1155/2013/630156

  16. Enhanced activity and interfacial durability study of ultra low Pt based electrocatalysts prepared by ion beam assisted deposition (IBAD) method

    International Nuclear Information System (INIS)

    Ramaswamy, N.; Arruda, T.M.; Wen, W.; Hakim, N.; Saha, M.; Gulla, A.; Mukerjee, S.

    2009-01-01

    Ultra low loading noble metal (0.04-0.12 mg Pt /cm 2 ) based electrodes were obtained by direct metallization of non-catalyzed gas diffusion layers via dual ion beam assisted deposition (IBAD) method. Fuel cell performance results reported earlier indicate significant improvements in terms of mass specific power density of 0.297 g Pt /kW with 250 A thick IBAD deposit (0.04 mg Pt /cm 2 for a total MEA loading of 0.08 mg Pt /cm 2 ) at 0.65 V in contrast to the state of the art power density of 1.18 g Pt /kW using 1 mg Pt(MEA) /cm 2 at 0.65 V. In this article we report the peroxide radical initiated attack of the membrane electrode assembly utilizing IBAD electrodes in comparison to commercially available E-TEK (now BASF Fuel Cell GmbH) electrodes and find the pathway of membrane degradation as well. A novel segmented fuel cell is used for this purpose to relate membrane degradation to peroxide generation at the electrode/electrolyte interface by means of systematic pre and post analyses of the membrane are presented. Also, we present the results of in situ X-ray absorption spectroscopy (XAS) experiments to elucidate the structure/property relationships of these electrodes that lead to superior performance in terms of gravimetric power density obtained during fuel cell operation.

  17. Simple Mathematical Models of High Energy Ion Beam Assisted Deposition Concentration Profiles in Binary Thin Films

    Czech Academy of Sciences Publication Activity Database

    Černý, F.; Konvičková, S.; Jech, V.; Hnatowicz, Vladimír

    2011-01-01

    Roč. 11, č. 10 (2011), s. 8936-8942 ISSN 1533-4880 R&D Projects: GA MŠk(CZ) LC06041 Institutional research plan: CEZ:AV0Z10480505 Keywords : SILICON-NITRIDE FILMS * ENHANCED DEPOSITION * IBAD-PROCESS Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.563, year: 2011

  18. Synthesis and corrosion properties of silicon nitride films by ion beam assisted deposition

    Science.gov (United States)

    Baba, K.; Hatada, R.; Emmerich, R.; Enders, B.; Wolf, G. K.

    1995-12-01

    Silicon nitride films SiN x were deposited on 316L austenitic stainless steel substrates by silicon evaporation and simultaneous nitrogen ion irradiation with an acceleration voltage of 2 kV. In order to study the influence of the nitrogen content on changes in stoichiometry, structure, morphology, thermal oxidation behaviour and corrosion behaviour, the atom to ion transport ratio was systematically varied. The changes of binding states and the stoichiometry were evaluated with XPS and AES analysis. A maximum nitrogen content was reached with a {Si}/{N} transport ratio lower than 2. The films are chemically inert when exposed to laboratory atmosphere up to a temperature of more than 1000°C. XRD and SEM measurements show amorphous and featureless films for transport ratios {Si}/{N} from 1 up to 10. The variation of the corrosion behaviour of coated stainless steel substrates in sulphuric acid and hydrochloric acid shows a minimum at medium transport ratios. This goes parallel with changes in porosity and adhesion. Additional investigations showed that titanium implantation as an intermediate step improves the corrosion resistance considerably.

  19. Electron-beam-assisted oxygen purification at low temperatures for electron-beam-induced pt deposits: towards pure and high-fidelity nanostructures.

    Science.gov (United States)

    Plank, Harald; Noh, Joo Hyon; Fowlkes, Jason D; Lester, Kevin; Lewis, Brett B; Rack, Philip D

    2014-01-22

    Nanoscale metal deposits written directly by electron-beam-induced deposition, or EBID, are typically contaminated because of the incomplete removal of the original organometallic precursor. This has greatly limited the applicability of EBID materials synthesis, constraining the otherwise powerful direct-write synthesis paradigm. We demonstrate a low-temperature purification method in which platinum-carbon nanostructures deposited from MeCpPtIVMe3 are purified by the presence of oxygen gas during a post-electron exposure treatment. Deposit thickness, oxygen pressure, and oxygen temperature studies suggest that the dominant mechanism is the electron-stimulated reaction of oxygen molecules adsorbed at the defective deposit surface. Notably, pure platinum deposits with low resistivity and retain the original deposit fidelity were accomplished at an oxygen temperature of only 50 °C.

  20. The Effect of Annealing on the Structural and Optical Properties of Titanium Dioxide Films Deposited by Electron Beam Assisted PVD

    Directory of Open Access Journals (Sweden)

    Yaser M. Abdulraheem

    2013-01-01

    Full Text Available Titanium dioxide thin films were deposited on crystalline silicon substrates by electron beam physical vapor deposition. The deposition was performed under vacuum ranging from 10−5 to 10−6 Torr without process gases, resulting in homogeneous TiO2-x layers with a thickness of around 100 nm. Samples were then annealed at high temperatures ranging from 500°C to 800°C for 4 hours under nitrogen, and their structural and optical properties along with their chemical structure were characterized before and after annealing. The chemical and structural characterization revealed a substoichiometric TiO2-x film with oxygen vacancies, voids, and an interface oxide layer. It was found from X-ray diffraction that the deposited films were amorphous and crystallization to anatase phase occurred for annealed samples and was more pronounced for annealing temperatures above 700°C. The refractive index obtained through spectroscopic ellipsometry ranged between 2.09 and 2.37 in the wavelength range, 900 nm to 400 nm for the as-deposited sample, and jumped to the range between 2.23 and 2.65 for samples annealed at 800°C. The minimum surface reflectance changed from around 0.6% for the as-deposited samples to 2.5% for the samples annealed at 800°C.

  1. Improving the Characteristics of Sn-doped In{sub 2}O{sub 2} Grown at Room Temperature with Oxygen Radical-Assisted Electron Beam Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Min-Suk [Korea Institute of Industrial Technology, Gwangju (Korea, Republic of); Seo, Inseok [Chonbuk National University, Jeonju (Korea, Republic of)

    2017-07-15

    Sn-doped In{sub 2}O{sub 3} (Indium tin oxide, ITO) is widely utilized in numerous industrial applications due to its high electrical conductivity and high optical transmittance in the visible region. High quality ITO thin-films have been grown at room temperature by oxygen radical assisted e-beam evaporation without any post annealing or plasma treatment. The introduction of oxygen radicals during e-beam growth greatly improved the surface morphology and structural properties of the ITO films. The obtained ITO film exhibits higher carrier mobility of 43.2 cm{sup 2}/V·s and larger optical transmittance of 84.6%, resulting in a higher figure of merit of ∼ 2.8 × 10{sup −2} Ω{sup −1}, which are quite comparable to the ITO film deposited by conventional e-beam evaporation. These results show that ITO films grown by oxygen radical assisted e-beam evaporation at room temperature with high optical transmittance and high electron conductivity have a great potential for organic optoelectronic devices.

  2. Improving the characteristics of Sn-doped In2O2 grown at room temperature with oxygen radical-assisted electron beam deposition

    Science.gov (United States)

    Oh, Min-Suk; Seo, Inseok

    2017-07-01

    Sn-doped In2O3 (Indium tin oxide, ITO) is widely utilized in numerous industrial applications due to its high electrical conductivity and high optical transmittance in the visible region. High quality ITO thin-films have been grown at room temperature by oxygen radical assisted e-beam evaporation without any post annealing or plasma treatment. The introduction of oxygen radicals during e-beam growth greatly improved the surface morphology and structural properties of the ITO films. The obtained ITO film exhibits higher carrier mobility of 43.2 cm2/V·s and larger optical transmittance of 84.6%, resulting in a higher figure of merit of ˜ 2.8 × 10-2 Ω-1, which are quite comparable to the ITO film deposited by conventional e-beam evaporation. These results show that ITO films grown by oxygen radical assisted e-beam evaporation at room temperature with high optical transmittance and high electron conductivity have a great potential for organic optoelectronic devices.

  3. Room temperature photoluminescence from In{sub x}Al{sub (1−x)}N films deposited by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kong, W., E-mail: wei.kong@duke.edu; Jiao, W. Y.; Kim, T. H.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Mohanta, A. [Oak Ridge Institute for Science and Education, Research Participation Program, U.S. Army Aviation and Missile Research, Development and Engineering Center (AMRDEC), Redstone Arsenal, Alabama 35898 (United States); Roberts, A. T. [Charles Bowden Research Lab, Army Aviation and Missile RD and E Center, Redstone Arsenal, Alabama 35898 (United States); Fournelle, J. [Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States); Losurdo, M. [Plasma Chemistry Research Center-CNR, via Orabona, 4-70126 Bari (Italy); Everitt, H. O. [Charles Bowden Research Lab, Army Aviation and Missile RD and E Center, Redstone Arsenal, Alabama 35898 (United States); Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2014-09-29

    InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of In{sub x}Al{sub (1−x)}N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

  4. Study on the Properties of 1319 nm Ultra-High Reflector Deposited by Electron Beam Evaporation Assisted by an Energetic RF Ion Source

    Directory of Open Access Journals (Sweden)

    Songwen Deng

    2018-02-01

    Full Text Available Ultra-high reflectors, working as a critical optical component, has been widely applied as a cavity mirror in fine optical systems such as laser gyro, F-P interferometer, etc. For decades, ion beam sputtering (IBS technology, which can deposit ultra-low loss and dense layers, has been commonly believed to be the only and irreplaceable method to fabricate ultra-high reflectors. Thus, reports on other methods are rare and a reflectivity above 99.99% obtained by evaporation technology (including ion assisted evaporation has not been seen yet. In the present study, an energetic radio frequency (RF ion source was introduced during the electron beam evaporation process, which improved the layer quality dramatically. An ultra-high reflector at 1319 nm with reflectivity of 99.992% (measured by cavity-ring down method was successfully deposited on a φ100 mm × 25 mm single crystal silicon substrate whose surface roughness was approximately 0.420 nm. The surface figure of the reflector was accurately controlled superior to 1/6λ (λ = 632.8 nm. The measured absorption was approximately 3–5 ppm and the calculated scatter based on surface roughness measurement was approximately 6.64 ppm. Total loss of the reflector was systematically discussed. This study showed that it is possible to apply electron beam evaporation in ultra-high reflector manufacture and the method is capable of depositing reflectors with an aperture larger than φ600 mm which is the maximum capacity of current IBS technology.

  5. Effects of calcium phosphate coating to SLA surface implants by the ion-beam-assisted deposition method on self-contained coronal defect healing in dogs

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Heun-Joo; Song, Ji-Eun; Um, Yoo-Jung; Chae, Gyung Joon; Jung, Ui-Won; Kim, Chang-Sung; Choi, Seong-Ho [Department of Periodontology, Research Institute for Periodontal Regeneration, College of Dentistry, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul 120-752 (Korea, Republic of); Chung, Sung-Min [Dentium Co., Seoul (Korea, Republic of); Lee, In-Seop, E-mail: shchoi726@yuhs.a [Institute of Physics and Applied Physics, Atomic-scale Surface Science Research Center, Yonsei University, Seoul (Korea, Republic of)

    2009-08-15

    The aim of this study was to evaluate the healing of self-contained coronal defects on a sand-blasted, large-grit, acid-etched (SLA) surface implant, which had a calcium phosphate (CaP) coating applied by ion-beam-assisted deposition (IBAD). We also evaluated the effect of heating the coating to different temperatures. The CaP-coated SLA implants exhibited a slightly larger bone healing capacity in the self-contained coronal defect than SLA implants, indicating that combining SLA surface implants and a CaP coating by the IBAD method had synergistic effects on bone healing. There was no difference in the healing capacity between 350 deg. C and 450 deg. C heat treatment of the coating layer.

  6. Dielectric properties and resistance to fatigue failure of different barrier layers prepared on flexible stainless-steel foils by ion-beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yu-qiong [National Microgravity Laboratory (NML), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); School of Optoelectronics, Beijing Institute of Technology, Beijing 100081 (China); Yu, Zhi-nong, E-mail: znyu@bit.edu.cn [School of Optoelectronics, Beijing Institute of Technology, Beijing 100081 (China); Leng, Jian [Tianjin Key Laboratory of Optical Thin Films, Tianjin Jinhang Institute of Technical Physics, Tianjin 300192 (China); Wang, Hua-qing [Optical Thin Film Center, Daheng New Epoch Technology Inc., Beijing 100070 (China); Chen, She; Dong, Yu-hui [National Microgravity Laboratory (NML), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); Jin, Gang, E-mail: gajin@imech.ac.cn [National Microgravity Laboratory (NML), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China)

    2012-08-31

    A stainless-steel foil is an attractive candidate for the substrate of flexible display devices and integrated solar modules. For electrical insulation and ion diffusion reduction, a barrier layer should be coated on the stainless-steel foil surface. In this study, different barrier layers such as SiO{sub x}, TaO{sub x}, TiO{sub x} and TaO{sub x}/SiO{sub x} were prepared on the flexible stainless-steel foils (SUS 304) by ion-beam assisted deposition. The dielectric properties of the barrier layers, including resistance, reactance, leakage current density, breakdown field strength and performance index, were investigated. The resistance to fatigue failure of the barrier layers was evaluated by insulating tests after the specimen foils were flattened. The results show that the dielectric properties and the resistance to fatigue failure of the TaO{sub x}/SiO{sub x} composite barrier layer are better than those of the SiO{sub x} or the TaO{sub x} barrier layer. The best dielectric properties and resistance to fatigue failure are achieved with the 4-{mu}m thick TaO{sub x}/SiO{sub x} composite barrier layer. - Highlights: Black-Right-Pointing-Pointer SiO{sub x}, TaO{sub x}, TiO{sub x} and TaO{sub x}/SiO{sub x} barrier layers are prepared on stainless-steel. Black-Right-Pointing-Pointer Barriers layers prepared by ion-beam assisted deposition. Black-Right-Pointing-Pointer Dielectric properties and resistance to fatigue failure performance are compared. Black-Right-Pointing-Pointer 4-{mu}m thick TaO{sub x}/SiO{sub x} layers show good dielectric properties and resistance to fatigue failure.

  7. Ion beam assisted film growth

    CERN Document Server

    Itoh, T

    2012-01-01

    This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

  8. Networks of ultra-fine Ag nanocrystals in a Teflon AF (registered) matrix by vapour phase e-beam-assisted deposition

    International Nuclear Information System (INIS)

    Biswas, A; Bayer, I S; Marken, B; Pounds, T D; Norton, M G

    2007-01-01

    We have fabricated nanocomposite thin films comprising silver (Ag) nanoparticles dispersed in a Teflon AF (registered) polymer matrix using electron-beam-assisted physical vapour deposition. Four different Ag nanoparticle volume fillings (20%, 35%, 70% and 75%) were achieved by varying the relative metal-polymer evaporation rates with the formation of highly crystalline Ag nanoparticles regardless of the filling ratio. The present fabrication technique allowed full control over dispersion uniformity of nanoparticles in the polymer network. At 20% and 35% metal volume fillings, the nanocomposite film morphology consists of a uniformly dispersed assembly of equiaxed isolated Ag nanoparticles. At higher metal volume fractions the nanocomposite structures displayed two different and unique Ag nanoparticle arrangements within the polymer matrix. In particular, at 70% metal filling, the formation of irregularly shaped clusters of individually assembled nanocrystals was observed. At a slightly higher volume filling (75%), larger irregularly shaped Ag nanocrystals that appeared to be the result of coalescence and grain growth were observed. Finally, a composite theory developed by Tandon and Weng was used to estimate various elastic properties of the nanocomposite films. At high metal filling, the reinforcing effect of the Ag nanoparticles was reflected as approximately a sixfold increase in the elastic modulus compared to the virgin polymer film. Possible applications of such ultra-fine metal nanoparticles networks are discussed

  9. Maskless and resist-free rapid prototyping of three-dimensional structures through electron beam induced deposition (EBID) of carbon in combination with metal-assisted chemical etching (MaCE) of silicon.

    Science.gov (United States)

    Rykaczewski, Konrad; Hildreth, Owen J; Kulkarni, Dhaval; Henry, Matthew R; Kim, Song-Kil; Wong, Ching Ping; Tsukruk, Vladimir V; Fedorov, Andrei G

    2010-04-01

    In this work, we introduce a maskless, resist-free rapid prototyping method to fabricate three-dimensional structures using electron beam induced deposition (EBID) of amorphous carbon (aC) from a residual hydrocarbon precursor in combination with metal-assisted chemical etching (MaCE) of silicon. We demonstrate that EBID-made patterned aC coating, with thickness of even a few nanometers, acts as a negative "mask" for the etching process and is sufficient for localized termination of the MaCE of silicon. Optimal aC deposition settings and gold film thickness for fabrication of high-aspect-ratio nanoscale 3D silicon structures are determined. The speed necessary for optimal aC feature deposition is found to be comparable to the writing speed of standard Electron Beam Lithography and the MaCE etching rate is found to be comparable to standard deep reactive ion etching (DRIE) rate.

  10. Effect of nitrogen environment on NdFeB thin films grown by radio frequency plasma beam assisted pulsed laser deposition

    International Nuclear Information System (INIS)

    Constantinescu, C.; Patroi, E.; Codescu, M.; Dinescu, M.

    2013-01-01

    Highlights: ► NdFeB thin films grown by PLD, in vacuum and in nitrogen, are presented. ► Nitrogen inclusion in thin film structures is related to improved coercitivity. ► Magnetical, optical and morphological properties of the thin films are discussed. - Abstract: NdFeB is a very attractive material for applications in electrical engineering and in electronics, for high-tech devices where high coercive field and high remanence are needed. In this paper we demonstrate that the deposition of nitrogen doped NdFeB thin films by pulsed laser deposition, in the presence of a nitrogen radiofrequency plasma beam, exhibit improved magnetic properties and surface morphology, when compared to vacuum deposited NdFeB layers. A Nd:YAG pulsed laser (3ω and 4ω) was focused on a NdFeB target, in vacuum, or in the presence of a nitrogen plasma beam. Substrate temperature (RT-850 °C), nitrogen gas pressure, and radiofrequency power (75–150 W), were particularly varied. The thin films were investigated by means of X-ray diffraction, atomic force microscopy, scanning electron microscopy, spectroscopic-ellipsometry, and vibrating sample magnetometry.

  11. Effect of nitrogen environment on NdFeB thin films grown by radio frequency plasma beam assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Constantinescu, C., E-mail: catalin.constantinescu@inflpr.ro [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor bd., Magurele, RO-077125, Bucharest (Romania); Patroi, E.; Codescu, M. [National Institute for Research and Development in Electrical Engineering - Advanced Research, 313 Spl. Unirii, Sector 3, RO-030138, Bucharest (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor bd., Magurele, RO-077125, Bucharest (Romania)

    2013-03-01

    Highlights: Black-Right-Pointing-Pointer NdFeB thin films grown by PLD, in vacuum and in nitrogen, are presented. Black-Right-Pointing-Pointer Nitrogen inclusion in thin film structures is related to improved coercitivity. Black-Right-Pointing-Pointer Magnetical, optical and morphological properties of the thin films are discussed. - Abstract: NdFeB is a very attractive material for applications in electrical engineering and in electronics, for high-tech devices where high coercive field and high remanence are needed. In this paper we demonstrate that the deposition of nitrogen doped NdFeB thin films by pulsed laser deposition, in the presence of a nitrogen radiofrequency plasma beam, exhibit improved magnetic properties and surface morphology, when compared to vacuum deposited NdFeB layers. A Nd:YAG pulsed laser (3{omega} and 4{omega}) was focused on a NdFeB target, in vacuum, or in the presence of a nitrogen plasma beam. Substrate temperature (RT-850 Degree-Sign C), nitrogen gas pressure, and radiofrequency power (75-150 W), were particularly varied. The thin films were investigated by means of X-ray diffraction, atomic force microscopy, scanning electron microscopy, spectroscopic-ellipsometry, and vibrating sample magnetometry.

  12. Study on the Properties of 1319 nm Ultra-High Reflector Deposited by Electron Beam Evaporation Assisted by an Energetic RF Ion Source

    OpenAIRE

    Songwen Deng; Gang Li; Feng Wang; Qipeng Lv; Long Sun; Yuqi Jin

    2018-01-01

    Ultra-high reflectors, working as a critical optical component, has been widely applied as a cavity mirror in fine optical systems such as laser gyro, F-P interferometer, etc. For decades, ion beam sputtering (IBS) technology, which can deposit ultra-low loss and dense layers, has been commonly believed to be the only and irreplaceable method to fabricate ultra-high reflectors. Thus, reports on other methods are rare and a reflectivity above 99.99% obtained by evaporation technology (includin...

  13. Silicon nitride films deposited with an electron beam created plasma

    Science.gov (United States)

    Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

    1984-01-01

    The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

  14. Thickness dependence of magnetic properties and giant magneto-impedance effect in amorphous Co{sub 73}Si{sub 12}B{sub 15} thin films prepared by Dual-Ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); BISSE/BUAA-SPNEE joint Laboratory Magnetism and Sperconducting technology on Spacecraft, Beihang University, Beijing 100191 (China); Wang, San-sheng, E-mail: wangssh@buaa.edu.cn [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); BISSE/BUAA-SPNEE joint Laboratory Magnetism and Sperconducting technology on Spacecraft, Beihang University, Beijing 100191 (China); Hu, Teng [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); He, Tong-fu [School of Instrumentation Science and Opto-electronics Engineering, Beihang University, Beijing 100191 (China); Chen, Zi-yu [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Yi, Zhong; Meng, Li-Fei [Science and Technology on Reliability and Environmental Engineering Laboratory, Beijing Institute of Spacecraft Environment Engineering, Beijing 100094 (China); BISSE/BUAA-SPNEE joint Laboratory Magnetism and Sperconducting technology on Spacecraft, Beihang University, Beijing 100191 (China)

    2017-03-15

    Dual-Ion Beam Assisted Deposition is a suitable method for the preparation of giant magneto-impedance (GMI) materials. In this paper, Co{sub 73}Si{sub 12}B{sub 15} thin films with different thicknesses were prepared by Dual-Ion Beam Assisted Deposition, and the influences of film thickness on magnetic properties and GMI effect were investigated. It was found that the asymmetric magnetic hysteresis loop in the prepared Co{sub 73}Si{sub 12}B{sub 15} thin films occurs at ambient temperature, and the shift behavior of hysteresis loop associated with film thickness. With the film thickness increasing, the values of shift field and coercive field and other parameters such as remanence and shift ratio appeared complex variation. At a certain frequency, the large GMI effect is only observed in some films, which have good magnetic properties including low coercivity, low remanence ratio and high shift ratio. The results indicated that the thickness dependence of magnetic properties nonlinearly determined the GMI effect in Co{sub 73}Si{sub 12}B{sub 15} thin films. - Highlights: • The relationship between film thickness and ΔZ/Z, ΔR/R, ΔX/X ratio of CoSiB film exhibits a complex behavior as the film thickness increases from 1.33 to 7.34 µm. The maximum value of GMI ratio is observed when the film thickness was 1.56, 2.48, 3.81 or 7.34 µm. • With the increase of film thickness, the peak frequency shifts to lower frequency, but does not decrease following the t-power law. • The above thickness phenomenon is due to the different magnetic properties of thin films. • The Dual-Ion Beam Assisted Deposition is introduced to prepare the GMI materials.

  15. Comparison of beam deposition for three neutral beam injection codes

    International Nuclear Information System (INIS)

    Wieland, R.M.; Houlberg, W.A.; Mense, A.T.

    1979-03-01

    The three neutral beam injection codes BEAM (Houlberg, ORNL), HOFR (Howe, ORNL), and FREYA (Post, PPPL) are compared with respect to the calculation of the fast ion deposition profile H(r). Only plasmas of circular cross section are considered, with injection confined to the mid-plane of the torus. The approximations inherent in each code are pointed out, and a series of comparisons varying several parameters (beam energy and radius, machine size, and injection angle) shows excellent agreement among all the codes. A cost comparison (execution time and memory requirements) is made which points out the relative merits of each code within the context of incorporation into a plasma transport simulation code

  16. Plasmon-assisted chemical vapor deposition.

    Science.gov (United States)

    Boyd, David A; Greengard, Leslie; Brongersma, Mark; El-Naggar, Mohamed Y; Goodwin, David G

    2006-11-01

    We introduce a new chemical vapor deposition (CVD) process that can be used to selectively deposit materials of many different types. The technique makes use of the plasmon resonance in nanoscale metal structures to produce the local heating necessary to initiate deposition when illuminated by a focused low-power laser. We demonstrate the technique, which we refer to as plasmon-assisted CVD (PACVD), by patterning the spatial deposition of PbO and TiO(2) on glass substrates coated with a dispersion of 23 nm gold particles. The morphology of both oxide deposits is consistent with local laser-induced heating of the gold particles by more than 150 degrees C. We show that temperature changes of this magnitude are consistent with our analysis of the heat-loss mechanisms. The technique is general and can be used to spatially control the deposition of virtually any material for which a CVD process exists.

  17. Ion-Bombardment of X-Ray Multilayer Coatings - Comparison of Ion Etching and Ion Assisted Deposition

    NARCIS (Netherlands)

    Puik, E. J.; van der Wiel, M. J.; Zeijlemaker, H.; Verhoeven, J.

    1991-01-01

    The effects of two forms of ion bombardment treatment on the reflectivity of multilayer X-ray coatings were compared: ion etching of the metal layers, taking place after deposition, and ion bombardment during deposition, the so-called ion assisted deposition. The ion beam was an Ar+ beam of 200 eV,

  18. Ion-assisted deposition of thin films

    International Nuclear Information System (INIS)

    Barnett, S.A.; Choi, C.H.; Kaspi, R.; Millunchick, J.M.

    1993-01-01

    Recent work on low-energy ion-assisted deposition of epitaxial films is reviewed. Much of the recent interest in this area has been centered on the use of very low ion energies (∼ 25 eV) and high fluxes (> 1 ion per deposited atom) obtained using novel ion-assisted deposition techniques. These methods have been applied in ultra-high vacuum, allowing the preparation of high-purity device-quality semiconductor materials. The following ion-surface interaction effects during epitaxy are discussed: improvements in crystalline perfection during low temperature epitaxy, ion damage, improved homogeneity and properties in III-V alloys grown within miscibility gaps, and changes in nucleation mechanism during heteroepitaxial growth

  19. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    Science.gov (United States)

    Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R. M.

    2015-05-01

    Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

  20. Patterned electrochemical deposition of copper using an electron beam

    Directory of Open Access Journals (Sweden)

    Mark den Heijer

    2014-02-01

    Full Text Available We describe a technique for patterning clusters of metal using electrochemical deposition. By operating an electrochemical cell in the transmission electron microscope, we deposit Cu on Au under potentiostatic conditions. For acidified copper sulphate electrolytes, nucleation occurs uniformly over the electrode. However, when chloride ions are added there is a range of applied potentials over which nucleation occurs only in areas irradiated by the electron beam. By scanning the beam we control nucleation to form patterns of deposited copper. We discuss the mechanism for this effect in terms of electron beam-induced reactions with copper chloride, and consider possible applications.

  1. Optical properties of YbF3-CaF2 composite thin films deposited by electron-beam evaporation

    Science.gov (United States)

    Wang, Songlin; Mi, Gaoyuan; Zhang, Jianfu; Yang, Chongmin

    2018-03-01

    We studied electron-beam evaporated YbF3-CaF2 composite films on ZnS substrate at different deposition parameters. The optical properties of films have been fitted, the surface roughness have been measured by AFM. The results of experiments indicated that increased the refractive indices, extinction coefficients, and surface roughness at higher deposition rate. The refractive index of composite film deposited by electron-beam evaporation with assisted-ion source was obviously higher than it without assisted-ion source.

  2. Calculation of neutral beam deposition accounting for excited states

    International Nuclear Information System (INIS)

    Gianakon, T.A.

    1992-09-01

    Large-scale neutral-beam auxillary heating of plasmas has led to new plasma operational regimes which are often dominated by fast ions injected via the absorption of an energetic beam of hydrogen neutrals. An accurate simulation of the slowing down and transport of these fast ions requires an intimate knowledge of the hydrogenic neutral deposition on each flux surface of the plasma. As a refinement to the present generation of transport codes, which base their beam deposition on ground-state reaction rates, a new set of routines, based on the excited states of hydrogen, is presented as mechanism for computing the attenuation and deposition of a beam of energetic neutrals. Additionally, the numerical formulations for the underlying atomic physics for hydrogen impacting on the constiuent plasma species is developed and compiled as a numerical database. Sample results based on this excited state model are compared with the ground-state model for simple plasma configurations

  3. Nanoscale Soldering of Positioned Carbon Nanotubes using Highly Conductive Electron Beam Induced Gold Deposition

    DEFF Research Database (Denmark)

    Madsen, Dorte Nørgaard; Mølhave, Kristian; Mateiu, Ramona Valentina

    2003-01-01

    We have developed an in-situ method for controlled positioning of carbon nanotubes followed by highly conductive contacting of the nanotubes, using electron beam assisted deposition of gold. The positioning and soldering process takes place inside an Environmental Scanning Electron Microscope (E......-SEM) in the presence of a source of gold-organic precursor gas. Bridges deposited between suspended microelectrodes show resistivities down to 10-4 Ωcm and Transmission Electron Microscopy (TEM) of the deposits reveals a dense core of gold particles surrounded by a crust of small gold nanoparticles embedded...

  4. Use of beam deflection to control an electron beam wire deposition process

    Science.gov (United States)

    Taminger, Karen M. (Inventor); Hofmeister, William H. (Inventor); Hafley, Robert A. (Inventor)

    2013-01-01

    A method for controlling an electron beam process wherein a wire is melted and deposited on a substrate as a molten pool comprises generating the electron beam with a complex raster pattern, and directing the beam onto an outer surface of the wire to thereby control a location of the wire with respect to the molten pool. Directing the beam selectively heats the outer surface of the wire and maintains the position of the wire with respect to the molten pool. An apparatus for controlling an electron beam process includes a beam gun adapted for generating the electron beam, and a controller adapted for providing the electron beam with a complex raster pattern and for directing the electron beam onto an outer surface of the wire to control a location of the wire with respect to the molten pool.

  5. Imprint reduction in rotating heavy ions beam energy deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bret, A., E-mail: antoineclaude.bret@uclm.es [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, MS-51, Cambridge, MA 02138 (United States); ETSI Industriales, Universidad Castilla-La Mancha, 13071 Ciudad Real (Spain); Instituto de Investigaciones Energéticas y Aplicaciones Industriales, Campus Universitario de Ciudad Real, 13071 Ciudad Real (Spain); Piriz, A.R., E-mail: Roberto.Piriz@uclm.es [ETSI Industriales, Universidad Castilla-La Mancha, 13071 Ciudad Real (Spain); Instituto de Investigaciones Energéticas y Aplicaciones Industriales, Campus Universitario de Ciudad Real, 13071 Ciudad Real (Spain); Tahir, N.A., E-mail: n.tahir@gsi.de [GSI Darmstadt, Plankstrasse 1, 64291 Darmstadt (Germany)

    2014-01-01

    The compression of a cylindrical target by a rotating heavy ions beam is contemplated in certain inertial fusion schemes or in heavy density matter experiments. Because the beam has its proper temporal profile, the energy deposition is asymmetric and leaves an imprint which can have important consequences for the rest of the process. In this paper, the Fourier components of the deposited ion density are computed exactly in terms of the beam temporal profile and its rotation frequency Ω. We show that for any beam profile of duration T, there exist an infinite number of values of ΩT canceling exactly any given harmonic. For the particular case of a parabolic profile, we find possible to cancel exactly the first harmonic and nearly cancel every other odd harmonics. In such case, the imprint amplitude is divided by 4 without any increase of Ω.

  6. Solid gold nanostructures fabricated by electron beam deposition

    DEFF Research Database (Denmark)

    Mølhave, Kristian; Madsen, Dorte Nørgaard; Rasmussen, A.M.

    2003-01-01

    and bridges. Transmission electron microscopy was used to study how the composition of these structures was affected when the background gas in the ESEM chamber and the electron beam parameters were varied. The nanostructures were layered composites of up to three different materials each characterized...... by a certain range of gold/carbon ratios. Above a certain threshold of ESEM chamber water vapor pressure and a certain threshold of electron beam current, the deposited tips contained a solid polycrystalline gold core. The deposition technique was used to fabricate free-standing nanowires and to solder free...

  7. Multi-electron beam system for high resolution electron beam induced deposition

    NARCIS (Netherlands)

    Van Bruggen, M.J.

    2008-01-01

    The development of a multi-electron beam system is described which is dedicated for electron beam induced deposition (EBID) with sub-10 nm resolution. EBID is a promising mask-less nanolithography technique which has the potential to become a viable technique for the fabrication of 20-2 nm

  8. Direct deposition of gold on silicon with focused ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Irradiation with ions at very low energies (below 500 eV) no longer induces a removal of substrate material, but the ions are directly deposited on the surface. In this way, gold has been deposited on silicon with focused ion beam exposure and the properties of the film have been investigated with atomic force microscopy and Auger electron spectroscopy. (author) 3 figs., 1 ref.

  9. Stress in ion-beam assisted silicon dioxide and tantalum pentoxide thin films

    CERN Document Server

    Sirotkina, N

    2003-01-01

    Ta sub 2 O sub 5 and SiO sub 2 thin films, deposited at room temperature by ion-beam sputtering (IBS) and dual ion-beam sputtering (DIBS), and SiO sub 2 films, deposited by reactive e-beam evaporation and ion-assisted deposition, were studied. The energy (150-600 eV) and ion-to-atom arrival ratio (0.27-2.0) of assisting argon and oxygen ions were varied. Influence of deposition conditions (deposition system geometry, nature and amount of gas in the chamber, substrate cleaning and ion-assistance parameters) on films properties (stress, composition, refractive index n sub 5 sub 0 sub 0 sub n sub m and extinction coefficient k sub 5 sub 0 sub 0 sub n sub m) was investigated. A scanning method, based on substrate curvature measurements by laser reflection and stress calculation using the Stoney equation, was employed. RBS showed that stoichiometric Ta sub 2 O sub 5 films contain impurities of Ar, Fe and Mo. Stoichiometric SiO sub 2 films also contain Ta impurity. Argon content increases with ion bombardment and, ...

  10. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  11. Reactive ion assisted deposition of aluminum oxynitride thin films

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Lingg, L.J.; Lehan, J.P.; Macleod, H.A.; Suits, F.

    1989-01-01

    Optical properties, stoichiometry, chemical bonding states, and crystal structure of aluminum oxynitride (AlO/sub x/N/sub y/) thin films prepared by reactive ion assisted deposition were investigated. The results show that by controlling the amount of reactive gases the refractive index of aluminum oxynitride films at 550 nm is able to be varied from 1.65 to 1.83 with a very small extinction coefficient. Variations of optical constants and chemical bonding states of aluminum oxynitride films are related to the stoichiometry. From an x-ray photoelectron spectroscopy analysis it is observed that our aluminum oxynitride film is not simply a mixture of aluminum oxide and aluminum nitride but a continuously variable compound. The aluminum oxynitride films are amorphous from an x-ray diffraction analysis. A rugate filter using a step index profile of aluminum oxynitride films was fabricated by nitrogen ion beam bombardment of a growing Al film with backfill oxygen pressure as the sole variation. This filter shows a high resistivity to atmospheric moisture adsorption, suggesting that the packing density of aluminum oxynitride films is close to unity and the energetic ion bombardment densifies the film as well as forming the compound

  12. Electric field assisted nanocolloidal gold deposition

    NARCIS (Netherlands)

    Kooij, Ernst S.; Brouwer, E.A.M.; Poelsema, Bene

    2007-01-01

    The deposition of nanocolloidal gold particles under the influence of an externally applied electric field is studied in situ by means of spectroscopic ellipsometry. The variation of the relative coverage with time, as a function of applied potential, is determined using a principal component

  13. Multilayer Optical Coating Fabrication By Ion Beam Sputter Deposition

    Science.gov (United States)

    Becker, Juergen; Scheuer, Volker

    1989-02-01

    Ion Beam Sputter Deposition (IBSD) was proven to be a useful technique for producing high performance optical coatings. However, compared to other deposition techniques, several problems remain to be solved, such as low deposition rates, small areas with homogeneous deposition rate and the problem of contamination. In the work described here, a cubic vacuum chamber has been equipped with a commercially available ion beam source, a triple stage target holder and a rotating substrate holder. The primary interest was to get a reasonable deposition rate over a sufficiently large area. Single layers of SiO2, Ta205 and TiO2 and multilayers of Si02/Ta205 were produced. Contaminants in the films were analyzed by various techniques mainly by Total-Reflection X-ray Fluorescence (TXRF). Optical properties of the coatings were investigated to study the influence of the contaminants on the performance of the optical coatings. The optical properties were characterized by the refractive index, the absorption coefficient and the scattering behaviour. Scattering losses were measured by means of Total Integrated Scattering (TIS) and Angle Resolved Scattering (ARS). The damage threshold against high-power laser pulses of 1.06 pm was determined.

  14. Focused-ion-beam deposition for 3-D nanostructure fabrication

    Science.gov (United States)

    Matsui, Shinji

    2007-04-01

    Three-dimensional nanostructure fabrication has been demonstrated by 30 keV Ga+ focused-ion-beam chemical-vapor-deposition (FIB-CVD) using a phenanthrene (C14H10) source as a precursor. Microstructure plastic arts is advocated as a new field using micro-beam technology, presenting one example of micro-wine-glass with 2.75 μm external diameter and 12 μm height. The deposition film is a diamond like amorphous carbon. A large Young's modulus that exceeds 600 GPa seems to present great possibilities for various applications. Producing of three-dimensional nanostructure is discussed. Micro-coil, nanoelectrostatic actuator and nano-space-wiring with 0.1 μm dimension are demonstrated as parts of nanomechanical system. Furthermore, filtering tool is also fabricated as a novel nano-tool for the manipulation and analysis of subcellular organelles.

  15. Electron-beam deposition of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Marvel, R.E.; Appavoo, K. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Choi, B.K. [Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville, TN (United States); Nag, J. [Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States); Haglund, R.F. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Vanderbilt University, Institute for Nanoscale Science and Engineering, Nashville, TN (United States); Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States)

    2013-06-15

    Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass. (orig.)

  16. Electrostatic force assisted deposition of graphene

    Science.gov (United States)

    Liang, Xiaogan [Berkeley, CA

    2011-11-15

    An embodiment of a method of depositing graphene includes bringing a stamp into contact with a substrate over a contact area. The stamp has at least a few layers of the graphene covering the contact area. An electric field is developed over the contact area. The stamp is removed from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.

  17. An optimized nanoparticle separator enabled by electron beam induced deposition

    International Nuclear Information System (INIS)

    Fowlkes, J D; Rack, P D; Doktycz, M J

    2010-01-01

    Size-based separations technologies will inevitably benefit from advances in nanotechnology. Direct-write nanofabrication provides a useful mechanism for depositing/etching nanoscale elements in environments otherwise inaccessible to conventional nanofabrication techniques. Here, electron beam induced deposition was used to deposit an array of nanoscale features in a 3D environment with minimal material proximity effects outside the beam-interaction region. Specifically, the membrane component of a nanoparticle separator was fabricated by depositing a linear array of sharply tipped nanopillars, with a singular pitch, designed for sub-50 nm nanoparticle permeability. The nanopillar membrane was used in a dual capacity to control the flow of nanoparticles in the transaxial direction of the array while facilitating the sealing of the cellular-sized compartment in the paraxial direction. An optimized growth recipe resulted which (1) maximized the growth efficiency of the membrane (which minimizes proximity effects) and (2) preserved the fidelity of the spacing between nanopillars (which maximizes the size-based gating quality of the membrane) while (3) maintaining sharp nanopillar apexes for impaling an optically transparent polymeric lid critical for device sealing.

  18. Substrate heating measurements in pulsed ion beam film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Olson, J.C.; Davis, H.A.; Rej, D.J.; Waganaar, W.J. [Los Alamos National Lab., NM (United States); Tallant, D.R. [Cornell Univ., Ithaca, NY (United States). Materials Science and Engineering Dept.; Thompson, M.O. [Sandia National Labs., Albuquerque, NM (United States)

    1995-05-01

    Diamond-like Carbon (DLC) films have been deposited at Los Alamos National Laboratory by pulsed ion beam ablation of graphite targets. The targets were illuminated by an intense beam of hydrogen, carbon, and oxygen ions at a fluence of 15-45 J/cm{sup 2}. Ion energies were on the order of 350 keV, with beam current rising to 35 kA over a 400 ns ion current pulse. Raman spectra of the deposited films indicate an increasing ratio of sp{sup 3} to sp{sup 2} bonding as the substrate is moved further away from the target and further off the target normal. Using a thin film platinum resistor at varying positions, we have measured the heating of the substrate surface due to the kinetic energy and heat of condensation of the ablated material. This information is used to determine if substrate heating is responsible for the lack of DLC in positions close to the target and near the target normal. Latest data and analysis will be presented.

  19. Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

    Directory of Open Access Journals (Sweden)

    C. G. Jin

    2008-01-01

    Full Text Available Silicon carbide (SiC films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM, scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

  20. Application of laser assisted cold spraying process for metal deposition

    CSIR Research Space (South Africa)

    Tlotleng, Monnamme

    2014-02-01

    Full Text Available Laser assisted cold spraying (LACS) process is a hybrid technique that uses laser and cold spray to deposit solid powders on metal substrates. For bonding to occur, the particle velocities must be supersonic which are achieved by entraining...

  1. Hot-wire assisted atomic layer deposition of Tungsten films

    NARCIS (Netherlands)

    Yang, Mengdi

    2018-01-01

    This thesis aims to establish a novel technique of atomic layer deposition (ALD) for the future ultra-large-scale integration (ULSI) of microelectronics. We developed a hot-wire assisted ALD (HWALD), where a heated tungsten (W) filament is utilized instead of a plasma to generate radicals. HWALD is

  2. Modeling of flame assisted chemical vapor deposition of silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Masi, M.; Cavallotti, C.; Raffa, E. [Dipartimento di Chimica, Materiali e Ingegneria Chimica, Politecnico di Milano, via Mancinelli 7, 20131 Milano (Italy)

    2011-08-15

    The simulation of a flame assisted chemical vapor deposition (FACVD) process is here proposed with reference to the growth of silicon thin films through the silane/chlorosilanes/hydrogen/chlorine route. The goal is to design a reactor able to deposit micromorphous or multicrystalline films at the high growth rates necessary for photovoltaic applications. In fact, since FACVD processes can operate in atmospheric conditions and in auto-thermal mode, they present significant energetic advantages with respect to the plasma assisted technology used today. This work is in particular devoted to illustrate the multi-hierarchical modeling procedure adopted to determine the process optimal operating conditions and to design the deposition chamber. Different burner geometries (single, porous or multiple nozzles burner) were investigated in order to exploit the advantages of the two classical stagnation flow and Bunsen stretched flames. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. CoPt nanoparticles deposited by electron beam evaporation

    International Nuclear Information System (INIS)

    Castaldi, L.; Giannakopoulos, K.; Travlos, A.; Niarchos, D.; Boukari, S.; Beaurepaire, E.

    2005-01-01

    Co 50 Pt 50 nanoparticles were co-deposited on thermally oxidized Si substrates by electron beam evaporation at 750 deg C. The mean particle sizes are between ∼5 and ∼20 nm and depend on the nominal thickness of the layer. Different processing conditions resulted in different structural and morphological properties of the samples which led to superparamagnetic and ferromagnetic behaviors. The post-annealing treatment of the CoPt nanograins resulted in the crystallization of the L1 0 ordered phase and in the magnetic hardening of nanoparticles with a maximum coercivity of ∼7.4 kOe

  4. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  5. Molecular beam deposition of nanoscale ionic liquids in ultrahigh vacuum.

    Science.gov (United States)

    Maruyama, Shingo; Takeyama, Yoko; Taniguchi, Hiroki; Fukumoto, Hiroki; Itoh, Mitsuru; Kumigashira, Hiroshi; Oshima, Masaharu; Yamamoto, Takakazu; Matsumoto, Yuji

    2010-10-26

    We propose a new approach to nanoscience and technology for ionic liquids (ILs): molecular beam deposition of IL in ultrahigh vacuum by using a continuous wave infrared (CW-IR) laser deposition technique. This approach has made it possible to prepare a variety of "nano-IL" with the given composition on the substrate: a nanodroplet, on one hand, the volume of which goes down to 1 aL and, on the other hand, an ultrathin film with a thickness to several 100 nm or less. The result of fractional distillation of a binary mixture of ILs, investigated by nuclear magnetic resonance as well as electrospray ionization time-of-flight mass spectrometry, indicates that this deposition process is based on the thermal evaporation of ILs, and thus this process also can be used as a new purification method of ILs in vacuum. Furthermore, the fabrication of binary mixture droplets of two ILs on the substrate by alternating deposition of two ILs was demonstrated; the homogeneity of the composition was confirmed even for one single droplet by high-spatial-resolution Raman spectroscopy.

  6. Ion assisted deposition of SiO2 film from silicon

    Science.gov (United States)

    Pham, Tuan. H.; Dang, Cu. X.

    2005-09-01

    Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

  7. Ion assisted deposition of refractory oxide thin film coatings for improved optical and structural properties

    International Nuclear Information System (INIS)

    Sahoo, N.K.; Thakur, S.; Bhattacharyya, D.; Das, N.C.

    1999-03-01

    Ion assisted deposition technique (IAD) has emerged as a powerful tool to control the optical and structural properties of thin film coatings. Keeping in view the complexity of the interaction of ions with the films being deposited, sophisticated ion sources have been developed that cater to the need of modern optical coatings with stringent spectral and environmental specifications. In the present work, the results of ion assisted deposition (IAD) of two commonly used refractory oxides, namely TiO 2 and ZrO 2 , using cold cathode ion source (CC-102R) are presented. Through successive feedback and calibration techniques, various ion beams as well as deposition parameters have been optimized to achieve the best optical and structural film properties in the prevalent deposition geometry of the coating system. It has been possible to eliminate the unwanted optical and structural inhomogeneities from these films using and optimized set of process parameters. Interference modulated spectrophotometric and phase modulated ellipsometric techniques have been very successfully utilized to analyze the optical and structural parameters of the films. Several precision multilayer coatings have been developed and are being used for laser and spectroscopic applications. (author)

  8. Electron beam assisted field evaporation of insulating nanowires/tubes

    Energy Technology Data Exchange (ETDEWEB)

    Blanchard, N. P., E-mail: nicholas.blanchard@univ-lyon1.fr; Niguès, A.; Choueib, M.; Perisanu, S.; Ayari, A.; Poncharal, P.; Purcell, S. T.; Siria, A.; Vincent, P. [Institut Lumière Matière, UMR5306 Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne Cedex (France)

    2015-05-11

    We demonstrate field evaporation of insulating materials, specifically BN nanotubes and undoped Si nanowires, assisted by a convergent electron beam. Electron irradiation leads to positive charging at the nano-object's apex and to an important increase of the local electric field thus inducing field evaporation. Experiments performed both in a transmission electron microscope and in a scanning electron microscope are presented. This technique permits the selective evaporation of individual nanowires in complex materials. Electron assisted field evaporation could be an interesting alternative or complementary to laser induced field desorption used in atom probe tomography of insulating materials.

  9. Electron beam assisted field evaporation of insulating nanowires/tubes

    International Nuclear Information System (INIS)

    Blanchard, N. P.; Niguès, A.; Choueib, M.; Perisanu, S.; Ayari, A.; Poncharal, P.; Purcell, S. T.; Siria, A.; Vincent, P.

    2015-01-01

    We demonstrate field evaporation of insulating materials, specifically BN nanotubes and undoped Si nanowires, assisted by a convergent electron beam. Electron irradiation leads to positive charging at the nano-object's apex and to an important increase of the local electric field thus inducing field evaporation. Experiments performed both in a transmission electron microscope and in a scanning electron microscope are presented. This technique permits the selective evaporation of individual nanowires in complex materials. Electron assisted field evaporation could be an interesting alternative or complementary to laser induced field desorption used in atom probe tomography of insulating materials

  10. Matrix assisted pulsed laser deposition of melanin thin films

    Science.gov (United States)

    Bloisi, F.; Pezzella, A.; Barra, M.; Chiarella, F.; Cassinese, A.; Vicari, L.

    2011-07-01

    Melanins constitute a very important class of organic pigments, recently emerging as a potential material for a new generation of bioinspired biocompatible electrically active devices. In this paper, we report about the deposition of synthetic melanin films starting from aqueous suspensions by matrix assisted pulsed laser evaporation (MAPLE). In particular, we demonstrate that it is possible to deposit melanin films by MAPLE even if melanin (a) is not soluble in water and (b) absorbs light from UV to IR. AFM images reveal that the film surface features are highly depending on the deposition parameters. UV-VIS and FTIR spectra show both the optical properties and the molecular structure typical of melanins are preserved.

  11. Deposition profiles from electron-beam-heated evaporation sources

    International Nuclear Information System (INIS)

    Reiley, T.C.

    1976-01-01

    The thickness of physically vapor deposited copper and chromium specimens was measured as a function of position on a flat substrate situated above an electron-beam-heated evaporation source. The resulting profiles deviated from analytically predicted profiles based on the integrated mass flux from a flat surface of infinitesimal, directed surface sources. This deviation has been noted in the past and has been attributed to molecular interaction above the source. However, it is shown that the calculated molecular mean free path is much too long to allow any appreciable interaction of the evaporating molecules. Further, curvature of the molten source, arising from the surface recoil from evaporating molecules, is likely to be responsible for the difference between the observed and predicted profiles

  12. Comparative study of tantalum deposition by chemical vapor deposition and electron beam vacuum evaporation

    International Nuclear Information System (INIS)

    Spitz, J.; Chevallier, J.

    1975-01-01

    The coating by tantalum of steel parts has been carried out by the two following methods: chemical vapor deposition by hydrogen reduction of TaCl 5 (temperature=1100 deg C, pressure=200 mmHg, H 2 /TaCl 5 =10); electron beam vacuum evaporation. In this case Ta was firstly condensed by ion plating (P(Ar)=5x10 -3 up to 2x10 -2 mmHg; U(c)=3 to -4kV and J(c)=0.2 to 1mAcm -2 ) in order to ensure a good adhesion between deposit and substrate; then by vacuum condensation (substrate temperature: 300 to 650 deg C) to ensure that the coating is impervious to HCl an H 2 SO 4 acids. The advantages and inconveniences of each method are discussed [fr

  13. Ion-Assisted Pulsed Laser Deposition of amorphous tetrahedral-coordinated carbon films

    Science.gov (United States)

    Friedmann, T. A.; Tallant, D. R.; Sullivan, J. P.; Siegal, M. P.; Simpson, R. L.

    1994-04-01

    A parametric study has been performed of amorphous tetrahedral carbon (a-tC) films produced by ion-assisted pulsed laser deposition (IAPLD). The ion voltage, current density, and feed gas composition (nitrogen in argon) have been varied. The resultant films were characterized by thickness, residual stress, Raman spectroscopy, and electrical resistivity. The Raman spectra have been fit to two gaussian peaks, the so called graphitic (G) peak and the disorder (D) peak. It has been found that the magnitude of the D peak and the residual compressive stress are inversely correlated. At low beam voltages and currents, the magnitude of the D peak is low, increasing as the ion beam voltage and current are raised. The ion beam voltage has the most dramatic effect on the magnitude of the D peak. At low voltages (200-500 V) the magnitude of the D peak is greater for ion beams with high percentages of nitrogen possibly indicative of C-N bonding in the films. At higher voltages (500-1500 V) the D peak intensity is less sensitive to the nitrogen content of the beam.

  14. Polymer assisted deposition of electrochromic tungsten oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kalagi, S.S. [Govindram Seksaria Science College, Belgaum 590006, Karnataka (India); Dalavi, D.S.; Pawar, R.C.; Tarwal, N.L.; Mali, S.S. [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Patil, P.S., E-mail: psp_phy@unishivaji.ac.i [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

    2010-03-18

    We report the synthesis of structurally and uniformly deposited porous tungsten oxide (WO{sub 3}) thin films for the first time by the novel route of polymer assisted deposition (PAD) using ammonium tungstate as a precursor with polyvinyl alcohol (PVA) as an additive. The effect of deposition parameters on the morphological, optical and electrochemical performance of the thin films is investigated. WO{sub 3} thin films were characterized for their structural, morphological, optical and electrochromic properties. XRD result indicates monoclinic phase of WO{sub 2.92}. FT-Raman studies show high intensity peaks centered at 997 cm{sup -1}and 798 cm{sup -1}. SEM results indicate that there is uniform deposition of porous WO{sub 3}-PVA agglomerates on the transparent substrates. SEM data show low dense structure of an average grain size of about 1 {mu}m. Electrochromic studies reveal highly reversible and the stable nature of the thin films. Transmission data show an optical modulation density of 46.57% at 630 nm with an excellent reversibility of 89% and an electrochromic coloration efficiency of 36 cm{sup 2}/C.

  15. Laser-assisted deposition of thin C60 films

    DEFF Research Database (Denmark)

    Schou, Jørgen; Canulescu, Stela; Fæster, Søren

    Metal and metal oxide films with controlled thickness from a fraction of a monolayer up more than 1000 nm and known stoichiometry can be produced by pulsed laser deposition (PLD) relatively easily, and (PLD) is now a standard technique in all major research laboratories within materials science...... bound carbon molecule with a well-defined mass (M = 720 amu) and therefore a good, organic test molecule. C60 fullerene thin films of average thickness of more than 100 nm was produced in vacuum by matrix-assisted pulsed laser evaporation (MAPLE). A 355 nm Nd:YAG laser was directed onto a frozen target...

  16. Efficient electron beam deposition for repetitively pulsed krypton fluoride lasers

    International Nuclear Information System (INIS)

    Hegeler, F.; Myers, M.C.; Friedman, M.; Sethian, J.D.; Swanekamp, S.B.; Rose, D.V.; Welch, D.R.

    2002-01-01

    We have demonstrated that we can significantly increase the electron beam transmission efficiency through a pressure foil structure (hibachi) by segmenting the beam into strips to miss the hibachi support ribs. In order to increase the electron beam transmission, the cathode strips are adjusted to compensate for beam rotation and pinching. The beam propagation through the hibachi has been both measured and simulated with 1-D and 3-D codes

  17. Characteristics of selective deposition of metal organic films using focused ion beams

    International Nuclear Information System (INIS)

    Gamo, Kenji; Takakura, Nobuyuki; Takehara, Daisuke; Namba, Susumu

    1984-01-01

    50 keV Ar + or 35 keV focused Ga + beam were irradiated in a trimethyl aluminum atmosphere to provide a detailed characterization of maskless deposition. It was found from Auger electron spectroscopy that deposited films contain oxygen, carbon, aluminum and fluorine. The film thickness increased linearly with increasing a dose and the deposition rate was 10-20 nm/(10 16 ions/cm 2 ). A 0.5μm wide fine pattern which reflects a beam profile was formed by using focused Ga + beam. (author)

  18. Plasma and Ion Assistance in Physical Vapor Deposition: AHistorical Perspective

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2007-02-28

    Deposition of films using plasma or plasma-assist can betraced back surprisingly far, namely to the 18th century for arcs and tothe 19th century for sputtering. However, only since the 1960s thecoatings community considered other processes than evaporation for largescale commercial use. Ion Plating was perhaps the first importantprocess, introducing vapor ionization and substrate bias to generate abeam of ions arriving on the surface of the growing film. Ratherindependently, cathodic arc deposition was established as an energeticcondensation process, first in the former Soviet Union in the 1970s, andin the 1980s in the Western Hemisphere. About a dozen various ion-basedcoating technologies evolved in the last decades, all characterized byspecific plasma or ion generation processes. Gridded and gridless ionsources were taken from space propulsion and applied to thin filmdeposition. Modeling and simulation have helped to make plasma and ionseffects to be reasonably well understood. Yet--due to the complex, oftennon-linear and non-equilibrium nature of plasma and surfaceinteractions--there is still a place for the experience plasma"sourcerer."

  19. Water-Assisted Vapor Deposition of PEDOT Thin Film.

    Science.gov (United States)

    Goktas, Hilal; Wang, Xiaoxue; Ugur, Asli; Gleason, Karen K

    2015-07-01

    The synthesis and characterization of poly(3,4-ethylenedioxythiophene) (PEDOT) using water-assisted vapor phase polymerization (VPP) and oxidative chemical vapor deposition (oCVD) are reported. For the VPP PEDOT, the oxidant, FeCl3 , is sublimated onto the substrate from a heated crucible in the reactor chamber and subsequently exposed to 3,4-ethylenedioxythiophene (EDOT) monomer and water vapor in the same reactor. The oCVD PEDOT was produced by introducing the oxidant, EDOT monomer, and water vapor simultaneously to the reactor. The enhancement of doping and crystallinity is observed in the water-assisted oCVD thin films. The high doping level observed at UV-vis-NIR spectra for the oCVD PEDOT, suggests that water acts as a solubilizing agent for oxidant and its byproducts. Although the VPP produced PEDOT thin films are fully amorphous, their conductivities are comparable with that of the oCVD produced ones. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Energy Deposition Simulations and Measurements in an LHC Collimator and Beam Loss Monitors

    CERN Document Server

    Böhlen, Till; Bracco, C; Dehning, B; Redaelli, S; Weiler, T; Zamantzas, C

    2010-01-01

    The LHC collimators are protected against beam-caused damages by measuring the secondary particle showers with beam loss monitors. Downstream of every collimator an ionisation chamber and a secondary emission monitor are installed to determine the energy deposition in the collimator. The relation between the energy deposition in the beam loss monitor and the collimator jaw is based on secondary shower simulations. To verify the FLUKA simulations, the prototype LHC collimator installed in the SPS was equipped with beam loss monitors. The results of the measurements of the direct impact of a 26 GeV proton beam injected in the SPS onto the collimator are compared with the predictions by FLUKA simulations. In addition, simulation results from parameter scans for mean and peak energy deposition with its dependencies are shown.

  1. A simulation study of interface mixing during ion-assisted deposition

    International Nuclear Information System (INIS)

    Wenzhi Li; Fuzhai Cui; Yi Liao; Hengde Li

    1990-01-01

    Ion-beam assisted deposition (IAD) can produce strong film to substrate adhesion. The adhesion depends heavily on atom mixing near the interface. In order to study the dependence of the width of the mixed interface on the experimental parameters, a Monte Carlo study has been made using the dynamic simulation code TCIS-6. The simulation mode and calculational procedure are described. Simulation calculations indicate that the mixing increases with the bombarding energies and a saturation width appears at high energies. There is a strong relationship between the amount of mixing and the ion-to-atom arrival ratio. Some comparisons of the calculations with experimental data in the literature are also presented. (author)

  2. Amorphous Carbon Deposited by a Novel Aerosol-Assisted Chemical Vapor Deposition for Photovoltaic Solar Cells

    Science.gov (United States)

    Ahmad, Nurfadzilah; Kamaruzzaman, Dayana; Rusop, Mohamad

    2012-06-01

    Amorphous carbon (a-C) solar cells were successfully prepared using a novel and self-designed aerosol-assisted chemical vapor deposition (AACVD) method using camphor oil as a precursor. The fabricated solar cell with the configuration of Au/p-C/n-Si/Au achieved an efficiency of 0.008% with a fill factor of 0.15 for the device deposited at 0.5 h. The current-voltage (I-V) graph emphasized on the linear graph (ohmic) for the a-C thin films, whereas for the p-n device structure, a rectifying curve was obtained. The rectifying curves signify the heterojunction between the p-type a-C film and the n-Si substrate and designate the generation of electron-hole pair of the samples under illumination. Photoresponse characteristics of the deposited a-C was highlighted when being illuminated (AM 1.5 illumination: 100 mW/cm2, 25 °C). Transmittance spectrum exhibit a large transmittance value (>85%) and absorption coefficient value of 103-104 cm-1 at the visible range of 390 to 790 nm. The atomization of a liquid precursor solution into fine sub-micrometre-sized aerosol droplets in AACVD induced the smooth surface of a-C films. To the best of our knowledge, fabrication of a-C solar cell using this AACVD method has not yet been reported.

  3. Plasma and Ion Assistance in Physical Vapor Deposition: A Historical Perspective

    International Nuclear Information System (INIS)

    Anders, Andre

    2007-01-01

    Deposition of films using plasma or plasma-assist can be traced back surprisingly far, namely to the 18th century for arcs and to the 19th century for sputtering. However, only since the 1960s the coatings community considered other processes than evaporation for large scale commercial use. Ion Plating was perhaps the first important process, introducing vapor ionization and substrate bias to generate a beam of ions arriving on the surface of the growing film. Rather independently, cathodic arc deposition was established as an energetic condensation process, first in the former Soviet Union in the 1970s, and in the 1980s in the Western Hemisphere. About a dozen various ion-based coating technologies evolved in the last decades, all characterized by specific plasma or ion generation processes. Gridded and gridless ion sources were taken from space propulsion and applied to thin film deposition. Modeling and simulation have helped to make plasma and ions effects to be reasonably well understood. Yet--due to the complex, often non-linear and non-equilibrium nature of plasma and surface interactions--there is still a place for the experience plasma 'sourcerer'

  4. Exploring a new strategy for nanofabrication: deposition by scattered Ga ions using focused ion beam.

    Science.gov (United States)

    Tripathi, Sarvesh K; Shukla, Neeraj; Kulkarni, Vishwas N

    2009-02-18

    We report a new strategy of nanofabrication using the focused ion beam (FIB)-based chemical vapor deposition method. It utilizes scattered Ga ions to decompose organometallic molecules of the precursor gas for depositing the metallic element on a surface with the advantage of producing uniform metallic coats on those surfaces of nanostructures which are not directly accessible to the primary beam. The method can be used to provide electrical contacts on inaccessible regions of prototype nanodevices, such as ion batteries, electrophoresis cells, cantilevers, etc, which have been demonstrated and explained by depositing Pt and W on different surfaces of 3D nanostructures.

  5. Ion source for ion beam deposition employing a novel electrode assembly

    Science.gov (United States)

    Hayes, A. V.; Kanarov, V.; Yevtukhov, R.; Hegde, H.; Druz, B.; Yakovlevitch, D.; Cheesman, W.; Mirkov, V.

    2000-02-01

    A rf inductively coupled ion source employing a novel electrode assembly for focusing a broad ion beam on a relatively small target area was developed. The primary application of this ion source is the deposition of thin films used in the fabrication of magnetic sensors and optical devices. The ion optics consists of a three-electrode set of multiaperture concave dished grids with a beam extraction diameter of 150 mm. Also described is a variation in the design providing a beam extraction diameter of 120 mm. Grid hole diameters and grid spacing were optimized for low beamlet divergence and low grid impingement currents. The radius of curvature of the grids was optimized to obtain an optimally focused ion beam at the target location. A novel grid fabrication and mounting design was employed which overcomes typical limitations of such grid assemblies, particularly in terms of maintaining optimum beam focusing conditions after multiple cycles of operation. Ion beam generation with argon and xenon gases in energy ranges from 0.3 to 2.0 keV was characterized. For operation with argon gas, beam currents greater than 0.5 A were obtained with a beam energy of 800 eV. At optimal beam formation conditions, beam profiles at distances about equal to the radius of curvature were found to be close to Gaussian, with 99.9% of the beam current located within a 150 mm target diameter. Repeatability of the beam profile over long periods of operation is also reported.

  6. Surface scaling analysis of textured MgO thin films fabricated by energetic particle self-assisted deposition

    Science.gov (United States)

    Feng, Feng; Zhang, Xiangsong; Qu, Timing; Liu, Binbin; Huang, Junlong; Li, Jun; Xiao, Shaozhu; Han, Zhenghe; Feng, Pingfa

    2018-04-01

    In the fabrication of a high-temperature superconducting coated conductor, the surface roughness and texture of buffer layers can significantly affect the epitaxially grown superconductor layer. A biaxially textured MgO buffer layer fabricated by ion beam assisted deposition (IBAD) is widely used in the coated conductor manufacture due to its low thickness requirement. In our previous study, a new method called energetic particle self-assisted deposition (EPSAD), which employed only a sputtering deposition apparatus without an ion source, was proposed for fabricating biaxially textured MgO films on non-textured substrates. In this study, our aim was to investigate the deposition mechanism of EPSAD-MgO thin films. The behavior of the surface roughness (evaluated by Rq) was studied using atomic force microscopy (AFM) measurements with three scan scales, while the in-plane and out-of-plane textures were measured using X-ray diffraction (XRD). It was found that the variations of surface roughness and textures along with the increase in the thickness of EPSAD-MgO samples were very similar to those of IBAD-MgO reported in the literature, revealing the similarity of their deposition mechanisms. Moreover, fractal geometry was utilized to conduct the scaling analysis of EPSAD-MgO film's surface. Different scaling behaviors were found in two scale ranges, and the indications of the fractal properties in different scale ranges were discussed.

  7. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    Directory of Open Access Journals (Sweden)

    Brett B. Lewis

    2015-04-01

    Full Text Available Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IVMe3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.

  8. Real-time beam tracing for control of the deposition location of electron cyclotron waves

    Energy Technology Data Exchange (ETDEWEB)

    Reich, M., E-mail: matthias.reich@ipp.mpg.de; Bilato, R.; Mszanowski, U.; Poli, E.; Rapson, C.; Stober, J.; Volpe, F.; Zille, R.

    2015-11-15

    Highlights: • We successfully integrated a real-time EC beam tracing code at ASDEX Upgrade. • The calculation of EC beam deposition location is fast enough for control purposes. • The accuracy of the deposition location calculation exceeds equivalent measurements. • The implementation method is by design portable to larger fusion devices. - Abstract: Plasma control techniques that use electron cyclotron (EC) resonance heating and current drive such as control of neoclassical tearing modes require accurate control of the deposition location of EC beams. ASDEX Upgrade has successfully implemented a real-time version of the beam-tracing code TORBEAM into its real-time diagnostic system to act as a globally available module that calculates current deposition location and its sensitivity from other real-time diagnostic measurements for all its moveable EC wave launchers. Based on a highly (100×) accelerated version of TORBEAM, the software implementation as a diagnostic process uses parallelization and achieves cycle times of 15–20 ms for determining the radial deposition location of 12 beams in the plasma. This cycle time includes data input–output overhead arising from the use of available real-time signals. The system is by design portable to other machines such as ITER.

  9. A Large Aperture Superconducting Dipole for Beta Beams to Minimize Heat Deposition in the Coil

    CERN Document Server

    Wildner, E

    The aim of beta beams in a decay ring is to produce highly energetic pure electron neutrino and anti-neutrino beams coming from b-decay of 18Ne10+ and 6He2+ ion beams. The decay products, having different magnetic rigidities than the ion beam, are deviated inside the dipole. The aperture and the length of the magnet have to be optimized to avoid that the decay products hit the coil. The decay products are intercepted by absorber blocks inside the beam pipe between the dipoles to protect the following dipole. A first design of a 6T arc dipole using a cosine theta layout of the coil with an aperture of 80 mm fulfils the optics requirements. Heat deposition in the coil has been calculated using different absorber materials to find a solution to efficiently protect the coil. Aspects of impedance minimization for the case of having the absorbers inside the beam pipe have also been addressed.

  10. A Large Aperture Superconducting Dipole for Beta Beams to Minimize Heat Deposition in the Coil

    CERN Document Server

    Wildner, E

    2007-01-01

    The aim of beta beams in a decay ring is to produce highly energetic pure electron neutrino and anti-neutrino beams coming from b-decay of 18Ne10+ and 6He2+ ion beams. The decay products, having different magnetic rigidities than the main ion beam, are deviated inside the dipole. The aperture and the length of the magnet have to be optimized to avoid that the decay products hit the coil. The decay products are intercepted by absorber blocks inside the beam pipe between the dipoles to protect the following dipole. A first design of a 6T arc dipole using a cosine theta layout of the coil with an aperture of 80 mm fulfils the optics requirements. Heat deposition in the coil has been calculated using different absorber materials to find a solution to efficiently protect the coil. Aspects of impedance minimization for the case of having the absorbers inside the beam pipe have also been addressed.

  11. Neutral-beam deposition in large, finite-beta noncircular tokamak plasmas

    International Nuclear Information System (INIS)

    Wieland, R.M.; Houlberg, W.A.

    1982-02-01

    A parametric pencil beam model is introduced for describing the attenuation of an energetic neutral beam moving through a tokamak plasma. The nonnegligible effects of a finite beam cross section and noncircular shifted plasma cross sections are accounted for in a simple way by using a smoothing algorithm dependent linearly on beam radius and by including information on the plasma flux surface geometry explicitly. The model is benchmarked against more complete and more time-consuming two-dimensional Monte Carlo calculations for the case of a large D-shaped tokamak plasma with minor radius a = 120 cm and elongation b/a = 1.6. Deposition profiles are compared for deuterium beam energies of 120 to 150 keV, central plasma densities of 8 x 10 13 - 2 x 10 14 cm -3 , and beam orientation ranging from perpendicular to tangential to the inside wall

  12. Studies of the Influence of Beam Profile and Cooling Conditions on the Laser Deposition of a Directionally-Solidified Superalloy

    Directory of Open Access Journals (Sweden)

    Shuo Yang

    2018-02-01

    Full Text Available In the laser deposition of single crystal and directionally-solidified superalloys, it is desired to form laser deposits with high volume fractions of columnar grains by suppressing the columnar-to-equiaxed transition efficiently. In this paper, the influence of beam profile (circular and square shapes and cooling conditions (natural cooling and forced cooling on the geometric morphology and microstructure of deposits were experimentally studied in the laser deposition of a directionally-solidified superalloy, IC10, and the mechanisms of influence were revealed through a numerical simulation of the thermal processes during laser deposition. The results show that wider and thinner deposits were obtained with the square laser beam than those with the circular laser beam, regardless of whether natural or forced cooling conditions was used. The heights and contact angles of deposits were notably increased due to the reduced substrate temperatures by the application of forced cooling for both laser beam profiles. Under natural cooling conditions, columnar grains formed epitaxially at both the center and the edges of the deposits with the square laser beam, but only at the center of the deposits with the circular laser beam; under forced cooling conditions, columnar grains formed at both the center and the edges of deposits regardless of the laser beam profile. The high ratios of thermal gradient and solidification velocity in the height direction of the deposits were favorable to forming deposits with higher volume fractions of columnar grains.

  13. Erosion behaviour of physically vapour-deposited and chemically vapour-deposited SiC films coated on molybdenum during oxygenated argon beam thinning

    International Nuclear Information System (INIS)

    Shikama, T.; Kitajima, M.; Fukutomi, M.; Okada, M.

    1984-01-01

    The erosion behaviour during bombardment with a 5 keV argon beam at room temperature was studied for silicon carbide (SiC) films of thickness of about 10 μm coated on molybdenum by physical vapour deposition (PVD) and chemical vapour deposition (CVD). The PVD SiC (plasma-assisted ion plating) exhibited a greater thinning rate than the CVD SiC film. Electron probe X-ray microanalysis revealed that the chemical composition of PVD SiC was changed to a composition enriched in silicon by the bombardment, and there was a notable change in its surface morphology. The CVD SiC retained its initial chemical composition with only a small change in its surface morphology. Auger electron spectroscopy indicated that silicon oxide was formed on the surface of PVD SiC by the bombardment. The greater thinning rate and easier change in chemical composition in PVD SiC could be attributed to its readier chemical reaction with oxygen due to its more non-uniform structure and weaker chemical bonding. Oxygen was present as one of the impurities in the argon beam. (Auth.)

  14. Shading correction assisted iterative cone-beam CT reconstruction

    Science.gov (United States)

    Yang, Chunlin; Wu, Pengwei; Gong, Shutao; Wang, Jing; Lyu, Qihui; Tang, Xiangyang; Niu, Tianye

    2017-11-01

    Recent advances in total variation (TV) technology enable accurate CT image reconstruction from highly under-sampled and noisy projection data. The standard iterative reconstruction algorithms, which work well in conventional CT imaging, fail to perform as expected in cone beam CT (CBCT) applications, wherein the non-ideal physics issues, including scatter and beam hardening, are more severe. These physics issues result in large areas of shading artifacts and cause deterioration to the piecewise constant property assumed in reconstructed images. To overcome this obstacle, we incorporate a shading correction scheme into low-dose CBCT reconstruction and propose a clinically acceptable and stable three-dimensional iterative reconstruction method that is referred to as the shading correction assisted iterative reconstruction. In the proposed method, we modify the TV regularization term by adding a shading compensation image to the reconstructed image to compensate for the shading artifacts while leaving the data fidelity term intact. This compensation image is generated empirically, using image segmentation and low-pass filtering, and updated in the iterative process whenever necessary. When the compensation image is determined, the objective function is minimized using the fast iterative shrinkage-thresholding algorithm accelerated on a graphic processing unit. The proposed method is evaluated using CBCT projection data of the Catphan© 600 phantom and two pelvis patients. Compared with the iterative reconstruction without shading correction, the proposed method reduces the overall CT number error from around 200 HU to be around 25 HU and increases the spatial uniformity by a factor of 20 percent, given the same number of sparsely sampled projections. A clinically acceptable and stable iterative reconstruction algorithm for CBCT is proposed in this paper. Differing from the existing algorithms, this algorithm incorporates a shading correction scheme into the low

  15. Analysis of sub-bandgap losses in TiO2 coating deposited via single and dual ion beam deposition

    Czech Academy of Sciences Publication Activity Database

    Žídek, Karel; Hlubuček, Jiří; Horodyská, Petra; Budasz, Jiří; Václavík, Jan

    2017-01-01

    Roč. 626, March (2017), s. 60-65 ISSN 0040-6090 R&D Projects: GA MŠk(CZ) LO1206 Institutional support: RVO:61389021 Keywords : Ion beam deposition * Titanium dioxide * Optical coating * Sub-bandgap losses * Urbach tail Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.879, year: 2016 http://www.sciencedirect.com/science/article/pii/S0040609017301256

  16. Production of radical species by electron beam deposition in an ArF* lasing medium

    Science.gov (United States)

    Petrov, G. M.; Wolford, M. F.; Petrova, Tz. B.; Giuliani, J. L.; Obenschain, S. P.

    2017-10-01

    The electron-beam-pumped ArF laser is a laser technology capable of providing very high lasing energies at the shortest wavelength (λ = 193 nm) among the rare gas halide lasers and therefore has the potential to be a superior driver for inertial fusion. The electron kinetics are rigorously treated by numerically solving the steady-state, spatially averaged electron Boltzmann equation in Ar-F2 gas. The e-beam energy deposition and collisional reaction rates with electrons are calculated from the electron energy distribution function for a wide range of e-beam deposition powers (Pbeam = 10 kW/cm3-3 MW/cm3) and fluorine concentrations ( xF2 = 0.01 - 10%). The rates are reduced to a set of coefficients that are fitted with analytical formulas as a function of two universal parameters: Pbeam/p and xF2 , where p is the gas pressure. It is found that in the regime of high e-beam power deposition, the fluorine molecules are rapidly destroyed through dissociative attachment and neutral dissociation. The loss of F2 over the duration of the beam is proportional to the e-beam energy deposition per unit volume, ɛbeam, and follows ΔnF2(c m-3)≅4 ×1017ɛbeam(J/cm 3) , in agreement with experimental data. The fluorine molecule conversion to other fluorine species, including atomic fluorine, is shown to have a very small effect on the index of refraction even at percent level concentrations.

  17. Electron Beam-Induced Deposition for Atom Probe Tomography Specimen Capping Layers.

    Science.gov (United States)

    Diercks, David R; Gorman, Brian P; Mulders, Johannes J L

    2017-04-01

    Six precursors were evaluated for use as in situ electron beam-induced deposition capping layers in the preparation of atom probe tomography specimens with a focus on near-surface features where some of the deposition is retained at the specimen apex. Specimens were prepared by deposition of each precursor onto silicon posts and shaped into sub-70-nm radii needles using a focused ion beam. The utility of the depositions was assessed using several criteria including composition and uniformity, evaporation behavior and evaporation fields, and depth of Ga+ ion penetration. Atom probe analyses through depositions of methyl cyclopentadienyl platinum trimethyl, palladium hexafluoroacetylacetonate, and dimethyl-gold-acetylacetonate [Me2Au(acac)] were all found to result in tip fracture at voltages exceeding 3 kV. Examination of the deposition using Me2Au(acac) plus flowing O2 was inconclusive due to evaporation of surface silicon from below the deposition under all analysis conditions. Dicobalt octacarbonyl [Co2(CO)8] and diiron nonacarbonyl [Fe2(CO)9] depositions were found to be effective as in situ capping materials for the silicon specimens. Their very different evaporation fields [36 V/nm for Co2(CO)8 and 21 V/nm for Fe2(CO)9] provide options for achieving reasonably close matching of the evaporation field between the capping material and many materials of interest.

  18. Energy deposition of heavy ions in the regime of strong beam-plasma correlations.

    Science.gov (United States)

    Gericke, D O; Schlanges, M

    2003-03-01

    The energy loss of highly charged ions in dense plasmas is investigated. The applied model includes strong beam-plasma correlation via a quantum T-matrix treatment of the cross sections. Dynamic screening effects are modeled by using a Debye-like potential with a velocity dependent screening length that guarantees the known low and high beam velocity limits. It is shown that this phenomenological model is in good agreement with simulation data up to very high beam-plasma coupling. An analysis of the stopping process shows considerably longer ranges and a less localized energy deposition if strong coupling is treated properly.

  19. BIRTH: a beam deposition code for non-circular tokamak plasmas

    International Nuclear Information System (INIS)

    Otsuka, Michio; Nagami, Masayuki; Matsuda, Toshiaki

    1982-09-01

    A new beam deposition code has been developed which is capable of calculating fast ion deposition profiles including the orbit correction. The code incorporates any injection geometry and a non-circular cross section plasma with a variable elongation and an outward shift of the magnetic flux surface. Typical cpu time on a DEC-10 computer is 10 - 20 seconds and 5 - 10 seconds with and without the orbit correction, respectively. This is shorter by an order of magnitude than that of other codes, e.g., Monte Carlo codes. The power deposition profile calculated by this code is in good agreement with that calculated by a Monte Carlo code. (author)

  20. Large flexibility of high aspect ratio carbon nanostructures fabricated by electron-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Beard, J D; Gordeev, S N, E-mail: jdb28@bath.ac.uk [Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom)

    2010-11-26

    The mechanical properties of free-standing electron beam deposited amorphous carbon structures have been studied using atomic force microscopy. The fabricated carbon blades are found to be extraordinarily flexible, capable of undergoing vertical deflection up to {approx} 75% of their total length without inelastic deformation. The elastic bending modulus of these structures was calculated to be 28 {+-} 10 GPa.

  1. Charging effects during focused electron beam induced deposition of silicon oxide

    NARCIS (Netherlands)

    de Boer, Sanne K.; van Dorp, Willem F.; De Hosson, Jeff Th. M.

    2011-01-01

    This paper concentrates on focused electron beam induced deposition of silicon oxide. Silicon oxide pillars are written using 2, 4, 6, 8, 10-pentamethyl-cyclopenta-siloxane (PMCPS) as precursor. It is observed that branching of the pillar occurs above a minimum pillar height. The branching is

  2. Growth of phenylene vinylene thin films via surface polymerization by ion-assisted deposition

    NARCIS (Netherlands)

    Wroble, Amanda T.; Wildeman, Jurjen; Anunskis, Daniel J.; Hanley, Luke

    2008-01-01

    Surface polymerization by ion-assisted deposition was used to grow phenylene vinylene films (SPIAD-PPV) using the evaporation of 2methoxy-5-(2'-ethylhexyloxy)-1,4-bis((4',4 ''-bisstyryl) benzene) (MEH-OPV5) and the simultaneous deposition of non-mass-selected 10-200 eV thiophene or acetylene ions.

  3. Process-structure-property relationships of micron thick gadolinium oxide films deposited by reactive electron beam-physical vapor deposition (EB-PVD)

    Science.gov (United States)

    Grave, Daniel A.

    Gadolinium oxide (Gd2O3) is an attractive material for solid state neutron detection due to gadolinium's high thermal neutron capture cross section. Development of neutron detectors based on Gd2 O3 requires sufficiently thick films to ensure neutron absorption. In this dissertation work, the process-structure-property relationships of micron thick Gd2O3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD) were studied. Through a systematic design of experiments, fundamental studies were conducted to determine the effects of processing conditions such as deposition temperature, oxygen flow rate, deposition rate, and substrate material on Gd2O3 film crystallographic phase, texture, morphology, grain size, density, and surface roughness. Films deposited at high rates (> 5 A/s) were examined via x-ray diffraction (XRD) and Raman spectroscopy. Quantitative phase volume calculations were performed via a Rietveld refinement technique. All films deposited at high rates were found to be fully monoclinic or mixed cubic/monoclinic phase. Generally, increased deposition temperature and increased oxygen flow resulted in increased cubic phase volume. As film thickness increased, monoclinic phase volume increased. Grazing incidence x-ray diffraction (GIXRD) depth profiling analysis showed that cubic phase was only present under large incidence angle (large penetration depth) measurements, and after a certain point, only monoclinic phase was grown. This was confirmed by transmission electron microscopy (TEM) analysis with selected area diffraction (SAD). Based on this information, a large compressive stress was hypothesized to cause the formation of the monoclinic phase and this hypothesis was confirmed by demonstrating the existence of a stress induced phase transition. An experiment was designed to introduce compressive stress into the Gd2O 3 films via ion beam assisted deposition (IBAD). This allowed for systematic increase in compressive stress while

  4. Characterisation of optical thin films obtained by plasma ion assisted deposition

    Science.gov (United States)

    Placido, Frank; Gibson, Des; Waddell, Ewan; Crossan, Edward

    2006-08-01

    Optical thin films deposited using plasma ion assisted deposition (PAD) are characterized by ellipsometry, spectrophotometry and nano-indentation. PAD utilizes a dc voltage between an anode and a hot cathode, creating a high-density plasma that is extracted by an electromagnetic field. The assisted source allows denser, more stable films with higher refractive indices to be deposited without additional heating of the substrates. The primary advantage of the plasma compared to the ion source approach is that the plasma fills the vacuum chamber and couples into the evaporant, inducing partial ionization.

  5. Parallel electron-beam-induced deposition using a multi-beam scanning electron microscope

    NARCIS (Netherlands)

    Post, P.C.; Mohammadi-Gheidari, A.; Hagen, C.W.; Kruit, P.

    2011-01-01

    Lithography techniques based on electron-beam-induced processes are inherently slow compared to light lithography techniques. The authors demonstrate here that the throughput can be enhanced by a factor of 196 by using a scanning electron microscope equipped with a multibeam electron source. Using

  6. Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Brown, April S.; Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Morse, Michael [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

    2006-06-15

    We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350 C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450 C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. The electron beam deposition of titanium on polyetheretherketone (PEEK) and the resulting enhanced biological properties.

    Science.gov (United States)

    Han, Cheol-Min; Lee, Eun-Jung; Kim, Hyoun-Ee; Koh, Young-Hag; Kim, Keung N; Ha, Yoon; Kuh, Sung-Uk

    2010-05-01

    The surface of polyetheretherketone (PEEK) was coated with a pure titanium (Ti) layer using an electron beam (e-beam) deposition method in order to enhance its biocompatibility and adhesion to bone tissue. The e-beam deposition method was a low-temperature coating process that formed a dense, uniform and well crystallized Ti layer without deteriorating the characteristics of the PEEK implant. The Ti coating layer strongly adhered to the substrate and remarkably enhanced its wettability. The Ti-coated samples were evaluated in terms of their in vitro cellular behaviors and in vivo osteointegration, and the results were compared to a pure PEEK substrate. The level of proliferation of the cells (MC3T3-E1) was measured using a methoxyphenyl tetrazolium salt (MTS) assay and more than doubled after the Ti coating. The differentiation level of cells was measured using the alkaline phosphatase (ALP) assay and also doubled. Furthermore, the in vivo animal tests showed that the Ti-coated PEEK implants had a much higher bone-in-contact (BIC) ratio than the pure PEEK implants. These in vitro and in vivo results suggested that the e-beam deposited Ti coating significantly improved the potential of PEEK for hard tissue applications. Copyright 2009 Elsevier Ltd. All rights reserved.

  8. Fabrication of bright and thin Zn₂SiO₄ luminescent film for electron beam excitation-assisted optical microscope.

    Science.gov (United States)

    Furukawa, Taichi; Kanamori, Satoshi; Fukuta, Masahiro; Nawa, Yasunori; Kominami, Hiroko; Nakanishi, Yoichiro; Sugita, Atsushi; Inami, Wataru; Kawata, Yoshimasa

    2015-07-13

    We fabricated a bright and thin Zn₂SiO₄ luminescent film to serve as a nanometric light source for high-spatial-resolution optical microscopy based on electron beam excitation. The Zn₂SiO₄ luminescent thin film was fabricated by annealing a ZnO film on a Si₃N₄ substrate at 1000 °C in N₂. The annealed film emitted bright cathodoluminescence compared with the as-deposited film. The film is promising for nano-imaging with electron beam excitation-assisted optical microscopy. We evaluated the spatial resolution of a microscope developed using this Zn₂SiO₄ luminescent thin film. This is the first report of the investigation and application of ZnO/Si₃N₄ annealed at a high temperature (1000 °C). The fabricated Zn₂SiO₄ film is expected to enable high-frame-rate dynamic observation with ultra-high resolution using our electron beam excitation-assisted optical microscopy.

  9. Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition

    International Nuclear Information System (INIS)

    Ndiege, Nicholas; Subramanian, Vaidyanathan; Shannon, Mark A.; Masel, Richard I.

    2008-01-01

    Microwave-assisted chemical vapor deposition has been used to generate high quality, high-k dielectric films on silicon at high deposition rates with film thicknesses varying from 50 nm to 110 μm using inexpensive equipment. Characterization of the post deposition products was performed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Raman spectroscopy. Film growth was determined to occur via rapid formation and accumulation of tantalum oxide clusters from tantalum (v) ethoxide (Ta(OC 2 H 5 ) 5 ) vapor on the deposition surface

  10. UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

    DEFF Research Database (Denmark)

    Christensen, Bo Toftmann; Papantonalis, M.R.; Auyeung, R.C.Y.

    2004-01-01

    were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence. (C) 2003......-PLD). For the first time resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) was successfully demonstrated on a luminescent polymer system. In addition to this, an excimer laser has been used for UV-MAPLE depositions at 193 and 248-nm irradiation. Films deposited onto NaCl and quartz substrates...

  11. Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films

    NARCIS (Netherlands)

    Jinesh, K. B.; van Hemmen, J. L.; M. C. M. van de Sanden,; Roozeboom, F.; Klootwijk, J. H.; Besling, W. F. A.; Kessels, W. M. M.

    2011-01-01

    A comparative electrical characterization study of aluminum oxide (Al2O3) deposited by thermal and plasma-assisted atomic layer depositions (ALDs) in a single reactor is presented. Capacitance and leakage current measurements show that the Al2O3 deposited by the plasma-assisted ALD shows excellent

  12. An ion-beam-assisted process for high-Tc Josephson junctions

    International Nuclear Information System (INIS)

    Huang, M.Q.; Chen, L.; Zhao, Z.X.; Yang, T.; Nie, J.C.; Wu, P.J.; Xiong, X.M.

    1997-01-01

    We have developed a non-ion-etching ion-beam-assisted-deposition (IBAD) process for fabricating high critical-temperature (T c ) grain boundary Josephson junctions through a photoresist liftoff mask. The YBa 2 Cu 3 O 7 (YBCO) junctions fabricated through this process exhibited the resistively-shunted-junction (RSJ)-like I - V characteristics. The well-defined Shapiro steps have been seen on the I - V curves under microwave radiation. The magnetic modulation of critical current of a 4 μm width YBCO junction tallied with the prior simulated Fraunhofer diffraction pattern of a Josephson junction with a spatially homogeneous critical current density. The maximum peak-to-peak modulation voltage across the dc superconducting quantum interference device (SQUID) fabricated by using these junctions reached up to 32 μV at 77 K. The magnetic modulation of the SQUID exhibited periodic behavior with the observed modulation period of 5.0x10 -4 G. copyright 1997 American Institute of Physics

  13. Effect of electron-beam deposition process variables on the film characteristics of the CrOx films

    Science.gov (United States)

    Chiu, Po-kai; Liao, Yi-Ting; Tsai, Hung-Yin; Chiang, Donyau

    2018-02-01

    The film characteristics and optical properties of the chromium oxide films on the glass substrates prepared by electron-beam deposition with different process variables were investigated. The process variables included are the various oxygen flow rates, the different applied substrate temperatures, and the preparation process in Ar or O2 surrounding environment with and without ion-assisted deposition. The optical constants of the deposited films are determined from the reflectance and transmittance measurements obtained using a spectrophotometer with wavelengths ranging from 350 nm to 2000 nm. The microstructures of the films were examined by the XRD, SEM, and XPS. The electrical conductivity was measured by a four-point probe instrument. The resulting microstructures of all the prepared films are amorphous and the features of the films are dense, uniform and no pillar structure is observed. The refractive index of deposited films decrease with oxygen flow rate increase within studied wavelengths and the extinction coefficients have the same trend in wavelengths of UV/Vis ranges. Increasing substrate temperature to 200 oC results in increase of both refractive index and extinction coefficient, but substrate temperatures below 150 oC show negligible effect on optical constants. The optical and electrical properties in the prepared CrOx films are illustrated by the analyzed XPS results, which decompose the enveloped curve of chromium electron energy status into the constituents of metal Cr, oxides CrO2 and Cr2O3. The relative occupied area contributed from metal Cr and area contributed from the other oxides can express the concentration ratio of free electron to covalent bonds in deposited films and the ratio is applied to explain the film characteristics, including the optical constants and sheet resistance.

  14. Growth of cluster assembled ZnO film by nanocluster beam deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Halder, Nilanjan [Department of Physics, Manipal University Jaipur, Jaipur-303007 (India)

    2015-06-24

    ZnO is considered as one of the most promising material for optoelectronic devices. The present work emphasizes production of cluster assembled ZnO films by a UHV nanocluster beam deposition technique where the nanoclusters were produced in a laser vaporization cluster source. The microstructural and the optical properties of the ZnO nanocluster film deposited were investigated. As the wet chemical processes are not compatible with current solid state methods of device fabrication, therefore alternative UHV technique described in the paper is the need of the hour.

  15. Plasma based Ar+ beam assisted poly(dimethylsiloxane) surface modification

    International Nuclear Information System (INIS)

    Vladkova, T.G.; Keranov, I.L.; Dineff, P.D.; Youroukov, S.Y.; Avramova, I.A.; Krasteva, N.; Altankov, G.P.

    2005-01-01

    Plasma based Ar + beam performed in RF (13.56 MHz) low-pressure (200 mTorr) glow discharge (at 100 W, 1200 W and 2500 W) with a serial capacitance was employed for surface modification of poly(dimethylsiloxane) (PDMS) aimed at improvement of its interactions with living cells. The presence of a serial capacitance ensures arise of an ion-flow inside the plasma volume directed toward the treated sample and the vary of the discharge power ensures varied density of the ion-flow. XPS analysis was performed to study the changes in the surface chemical composition of the modified samples and the corresponding changes in the surface energy were monitored by contact angle measurements. We found that plasma based Ar + beam transforms the initially hydrophobic PDMS surface into a hydrophilic one mainly due to a raising of the polar component of the surface tension, this effect being most probably due to an enrichment of the modified surface layer with permanent dipoles of a [SiO x ]-based network and elimination of the original methyl groups. The initial adhesion of human fibroblast cells was studied on the described above plasma based Ar + beam modified and acrylic acid (AA) grafted or not fibronectin (FN) pre-coated or bare surfaces. The cell response seems to be related with the peculiar structure and wettability of the modified PDMS surface layer after plasma based Ar + beam treatment followed or not by AA grafting

  16. Microstructural comparisons of ultrathin Cu films deposited by ion-beam and dc-magnetron sputtering

    International Nuclear Information System (INIS)

    Prater, W.L.; Allen, E.L.; Lee, W.-Y.; Toney, M.F.; Kellock, A.; Daniels, J.S.; Hedstrom, J.A.; Harrell, T.

    2005-01-01

    We report and contrast both the electrical resistance and the microstructure of copper thin films deposited in an oxygen-containing atmosphere by ion-beam and dc-magnetron sputtering. For films with thicknesses of 5 nm or less, the resistivity of the Cu films is minimized at oxygen concentrations ranging from 0.2% to 1% for dc-magnetron sputtering and 6%-10% for ion-beam sputtering. Films sputtered under both conditions show a similar decrease of interface roughness with increasing oxygen concentration, although the magnetron-deposited films are smoother. The dc-magnetron-produced films have higher resistivity, have smaller Cu grains, and contain a higher concentration of cuprous oxide particles. We discuss the mechanisms leading to the grain refinement and the consequent reduced resistivity in both types of films

  17. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    International Nuclear Information System (INIS)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-01-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar + ion beam, we cleaned the polymer residue without damaging the graphene network. HfO 2 grown by atomic layer deposition on graphene cleaned using an Ar + ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar + ion cleaning) showed a non-uniform structure. A graphene–HfO 2 –metal capacitor fabricated by growing 20-nm thick HfO 2 on graphene exhibited a very low leakage current (<10 −11 A/cm 2 ) for Ar + ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  18. Experimental Results of Network-Assisted Interference Suppression Scheme Using Adaptive Beam-Tilt Switching

    Directory of Open Access Journals (Sweden)

    Tomoki Murakami

    2017-01-01

    Full Text Available This paper introduces a network-assisted interference suppression scheme using beam-tilt switching per frame for wireless local area network systems and its effectiveness in an actual indoor environment. In the proposed scheme, two access points simultaneously transmit to their own desired station by adjusting angle of beam-tilt including transmit power assisted from network server for the improvement of system throughput. In the conventional researches, it is widely known that beam-tilt is effective for ICI suppression in the outdoor scenario. However, the indoor effectiveness of beam-tilt for ICI suppression has not yet been indicated from the experimental evaluation. Thus, this paper indicates the effectiveness of the proposed scheme by analyzing multiple-input multiple-output channel matrices from experimental measurements in an office environment. The experimental results clearly show that the proposed scheme offers higher system throughput than the conventional scheme using just transmit power control.

  19. Ohmic contact junction of carbon nanotubes fabricated by in situ electron beam deposition

    International Nuclear Information System (INIS)

    Wang, Y G; Wang, T H; Lin, X W; Dravid, V P

    2006-01-01

    We present experimental evidence of in situ fabrication of multi-walled carbon nanotube junctions via electron beam induced deposition. The tip-to-tip interconnection of the nanotubes involves the alignment of two nanotubes via a piezodriven nanomanipulator and nano-welding by electron beam deposition. Hydrocarbon contamination from the pump oil vapour of the vacuum system of the TEM chamber was used as the solder; this is superior to the already available metallic solders because its composition is identical to the carbon nanotube. The hydrocarbon deposition, with perfect wettability, on the nanotubes establishes strong mechanical binding between the two nanotubes to form an integrated structure. Consequently, the nanotubes cross-linked by the hydrocarbon solder produce good electrical and mechanical connections. The joint dimension was determined by the size of the electron beam, which results in a sound junction with well-defined geometry and the smallest junction size obtained so far. In situ electric measurement showed a linear current-voltage property for the multi-walled nanotube junction

  20. Selected immobilization of individual nanoparticles by spot-exposure electron-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Burbridge, Daniel J; Crampin, Simon; Gordeev, Sergey N [Department of Physics, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Viau, Guillaume [Departement de Genie Physique, INSA de Toulouse, 135 avenue de Rangueil, 31077 Toulouse Cedex 4 (France)

    2010-01-29

    The use of spot-exposure electron-beam-induced deposition (EBID) to immobilize targeted nanoparticles on a substrate is demonstrated, and investigated using experiment and simulation. Nanoparticles are secured in place through the build-up of carbonaceous material that forms in the region between a particle and substrate when an energetic electron beam is focused onto the particle and projected through to the substrate. Material build-up directly affects the strength of adhesion to the surface, and can be controlled through electron dosage and beam energy. By selectively immobilizing specific particles within surface agglomerations and removing the excess, we illustrate the potential for spot-exposure EBID as a new technique for nanofabrication.

  1. Height Control and Deposition Measurement for the Electron Beam Free Form Fabrication (EBF3) Process

    Science.gov (United States)

    Seufzer, William J. (Inventor); Hafley, Robert A. (Inventor)

    2017-01-01

    A method of controlling a height of an electron beam gun and wire feeder during an electron freeform fabrication process includes utilizing a camera to generate an image of the molten pool of material. The image generated by the camera is utilized to determine a measured height of the electron beam gun relative to the surface of the molten pool. The method further includes ensuring that the measured height is within the range of acceptable heights of the electron beam gun relative to the surface of the molten pool. The present invention also provides for measuring a height of a solid metal deposit formed upon cooling of a molten pool. The height of a single point can be measured, or a plurality of points can be measured to provide 2D or 3D surface height measurements.

  2. Improvement of copper plating adhesion on silane modified PET film by ultrasonic-assisted electroless deposition

    International Nuclear Information System (INIS)

    Lu Yinxiang

    2010-01-01

    Copper thin film on silane modified poly(ethylene terephthalate) (PET) substrate was fabricated by ultrasonic-assisted electroless deposition. The composition and topography of copper plating PET films were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Peel adhesion strength, as high as 16.7 N/cm, was achieved for the planting copper layer to the modified PET substrate with ultrasonic-assisted deposition; however, a relative low value as 11.9 N/cm was obtained for the sample without ultrasonic vibration by the same measurement. The electrical conductivity of Cu film was changed from 7.9 x 10 4 to 2.1 x 10 5 S/cm by using ultrasonic technique. Ultrasonic operation has the significant merits of fast deposition and formation of good membranes for electroless deposition of Cu on PET film.

  3. Patchy Janus particles with tunable roughness and composition via vapor-assisted deposition of macromolecules

    Science.gov (United States)

    Shepard, Kimberly B.; Christie, Dane A.; Sosa, Chris L.; Arnold, Craig B.; Priestley, Rodney D.

    2015-03-01

    Here, we present a technique for the fabrication of patchy Janus particles utilizing a vapor-assisted macromolecular deposition technique, termed Matrix Assisted Pulsed Laser Evaporation (MAPLE). Using this technique, both inorganic and organic precursor particles, immobilized on a surface, are functionalized on one hemisphere with nanodroplets of a desired polymer, thus forming particles with a patchy Janus morphology and textured surface topology. This fabrication method is flexible with respect to the chemical identity of the precursor particle and the selection of the deposited polymer. By tuning MAPLE deposition parameters, e.g., target composition or deposition time, the Janus anisotropy and roughness (i.e., patchiness) can be tuned, thus enabling greater control over the particles' behavior for applications as nanoparticle surfactants for stabilization of emulsions and foams.

  4. Systematic investigation of the reactive ion beam sputter deposition process of SiO2

    Science.gov (United States)

    Mateev, Maria; Lautenschläger, Thomas; Spemann, Daniel; Finzel, Annemarie; Gerlach, Jürgen W.; Frost, Frank; Bundesmann, Carsten

    2018-02-01

    Ion beam sputter deposition (IBSD) is an established physical vapour deposition technique that offers the opportunity to tailor the properties of film-forming particles and, consequently, film properties. This is because of two reasons: (i) ion generation and acceleration (ion source), sputtering (target) and film deposition (substrate) are locally separated. (ii) The angular and energy distribution of sputtered target atoms and scattered primary particles depend on ion incidence angle, ion energy, and ion species. Ion beam sputtering of a Si target in a reactive oxygen atmosphere was used to grow SiO2 films on silicon substrates. The sputtering geometry, ion energy and ion species were varied systematically and their influence on film properties was investigated. The SiO2 films are amorphous. The growth rate increases with increasing ion energy and ion incidence angle. Thickness, index of refraction, stoichiometry, mass density and surface roughness show a strong correlation with the sputtering geometry. A considerable amount of primary inert gas particles is found in the deposited films. The primary ion species also has an impact on the film properties, whereas the influence of the ion energy is rather small.

  5. In situ growth optimization in focused electron-beam induced deposition

    Directory of Open Access Journals (Sweden)

    Paul M. Weirich

    2013-12-01

    Full Text Available We present the application of an evolutionary genetic algorithm for the in situ optimization of nanostructures that are prepared by focused electron-beam-induced deposition (FEBID. It allows us to tune the properties of the deposits towards the highest conductivity by using the time gradient of the measured in situ rate of change of conductance as the fitness parameter for the algorithm. The effectiveness of the procedure is presented for the precursor W(CO6 as well as for post-treatment of Pt–C deposits, which were obtained by the dissociation of MeCpPt(Me3. For W(CO6-based structures an increase of conductivity by one order of magnitude can be achieved, whereas the effect for MeCpPt(Me3 is largely suppressed. The presented technique can be applied to all beam-induced deposition processes and has great potential for a further optimization or tuning of parameters for nanostructures that are prepared by FEBID or related techniques.

  6. Observation of whispering gallery modes through electron beam-induced deposition.

    Science.gov (United States)

    Timmermans, F J; Chang, L; van Wolferen, H A G M; Lenferink, A T M; Otto, C

    2017-04-01

    Surprisingly intense spectra of whispering gallery modes were observed in polymer microbeads after illumination with electrons in a scanning electron microscope and subsequent laser illumination and spectral analysis. It will be proposed that whispering gallery mode resonances became visible after local deposition of hydrocarbon material through electron beam-induced deposition. The illumination of deposited material with a near infrared laser generates a broad light spectrum, acting as a local "white light" source that couples, for favorable wavelengths, with the WGM sustained by the sphere. This facilitates a spectroscopic analysis of the WGM and provides the Q-factor and free spectral range for all investigated particles. The analysis by an integrated SEM and Raman micro-spectrometer offers a direct approach to the analysis of WGM resonators as they are, for instance, used in sensing.

  7. Low-energy ion-beam deposition apparatus equipped with surface analysis system

    International Nuclear Information System (INIS)

    Ohno, Hideki; Aoki, Yasushi; Nagai, Siro.

    1994-10-01

    A sophisticated apparatus for low energy ion beam deposition (IBD) was installed at Takasaki Radiation Chemistry Research Establishment of JAERI in March 1991. The apparatus is composed of an IBD system and a real time/in-situ surface analysis system for diagnosing deposited thin films. The IBD system provides various kinds of low energy ion down to 10 eV with current density of 10 μA/cm 2 and irradiation area of 15x15 mm 2 . The surface analysis system consists of RHEED, AES, ISS and SIMS. This report describes the characteristics and the operation procedure of the apparatus together with some experimental results on depositing thin carbon films. (author)

  8. Plasma characterization of cross-beam pulsed-laser ablation used for carbon thin film deposition

    International Nuclear Information System (INIS)

    Sanchez Ake, C.; Sobral, H.; Villagran-Muniz, M.

    2007-01-01

    The dynamics of the interaction between two delayed plasmas induced by cross-beam pulsed-laser ablation was analyzed by fast photography using narrow interference filters. In this configuration, two perpendicular rotating carbon targets were ablated by two synchronized laser beams generating two interacting plasma plumes. A Nd: yttrium-aluminum-garnet (1064 nm) laser beam is focused onto a target generating a highly directed plume; subsequently an excimer laser (248 nm) produces a second perpendicular plasma, which expands through the plume region generated by the first laser. In the cross-beam configuration, collision processes cause a reduction in the C II ion kinetic energy from ∼ 110 to 35 eV; moreover, the species of the second plasma which travel on the normal direction to the target surface (toward the substrate) are mainly C II. Interaction between plasmas has been compared with laser-induced plume propagation through a background gas in terms to the drag model. Carbon thin films were deposited by the cross-beam technique for different delays between lasers. Raman spectroscopy was employed to study the changes in the bonding carbon films as a function of the kinetic energy of ablated C ions

  9. Fabrication of bimetallic nanostructures via aerosol-assisted electroless silver deposition for catalytic CO conversion.

    Science.gov (United States)

    Byeon, Jeong Hoon; Kim, Jang-Woo

    2014-03-12

    Bimetallic nanostructures were fabricated via aerosol-assisted electroless silver deposition for catalytic CO conversion. An ambient spark discharge was employed to produce nanocatalysts, and the particles were directly deposited on a polytetrafluoroethylene substrate for initiating silver deposition to form Pd-Ag, Pt-Ag, Au-Ag bimetallic nanostructures as well as a pure Ag nanostructure. Kinetics and morphological evolutions in the silver deposition with different nanocatalysts were comparatively studied. The Pt catalyst displayed the highest catalytic activity for electroless silver deposition, followed by the order Pd > Au > Ag. Another catalytic activity of the fabricated bimetallic structures in the carbon monoxide conversion was further evaluated at low-temperature conditions. The bimetallic systems showed significantly higher catalytic activity than that from a pure Ag system.

  10. Closed-loop control of laser assisted chemical vapor deposition growth of carbon nanotubes

    NARCIS (Netherlands)

    Burgt, Y. van de; Bellouard, Y.; Mandamparambil, R.; Haluska, M.; Dietzel, A.H.

    2012-01-01

    Laser-assisted chemical vapor deposition growth is an attractive mask-less process for growing locally aligned nanotubes in selected places on temperature sensitive substrates. An essential parameter for a successful and reproducible synthesis of nanotubes is the temperature during growth. Here, we

  11. New Insights in the Ion Beam Sputtering Deposition of ZnO-Fluoropolymer Nanocomposites

    Directory of Open Access Journals (Sweden)

    Maria Chiara Sportelli

    2018-01-01

    Full Text Available Surface modification treatments able to confer antistain/antibacterial properties to natural or synthetic materials are receiving increasing attention among scientists. Ion beam co-sputtering (IBS of zinc oxide (ZnO and poly-tetrafluoroethylene (PTFE targets allows for the preparation of novel multifunctional coatings composed of antimicrobial ZnO nanoparticles (NPs finely dispersed in an antistain PTFE polymeric matrix. Remarkably, IBS has been proved to be successful in the controlled deposition of thin nanocoatings as an alternative to wet methods. Moreover, tuning IBS deposition parameters allows for the control of ZnONP loadings, thus modulating the antibacterial/antistain coating’s final properties. All the deposited coatings were fully characterized by X-ray photoelectron spectroscopy (XPS, atomic force microscopy (AFM, and transmission electron microscopy (TEM in order to obtain information on the materials’ surface composition, with deep insight into the nanocoatings’ morphology as a function of the ZnONP loadings. An analysis of high-resolution XP spectra evidenced a high degree of polymer defluorination along with the formation of inorganic fluorides at increasing ZnO volume ratios. Hence, post-deposition treatments for fluorides removal, performed directly in the deposition chamber, were successfully developed and optimized. In this way, a complete stoichiometry for inorganic nanophases was obtained, allowing for the conversion of fluorides into ZnO.

  12. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam

    KAUST Repository

    Alaie, Seyedhamidreza

    2015-02-04

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties. In this work, Pt deposited by FIB is characterized thermally, structurally, and chemically. Its thermal conductivity is found to be substantially lower than the bulk value of Pt, 7.2 W m-1 K-1 versus 71.6 W m-1 K-1 at room temperature. The low thermal conductivity is attributed to the nanostructure of the material and its chemical composition. Pt deposited by FIB is shown, via aberration corrected TEM, to be a segregated mix of nanocrystalline Pt and amorphous C with Ga and O impurities. Ga impurities mainly reside in the Pt while O is homogeneously distributed throughout. The Ga impurity, small grain size of the Pt, and the amorphous carbon between grains are the cause for the low thermal conductivity of this material. Since Pt deposited by FIB is a common material for affixing samples, this information can be used to assess systematic errors in thermal characterization of different nanosamples. This application is also demonstrated by thermal characterization of two carbon nanofibers and a correction using the reported thermal properties of the Pt deposited by FIB.

  13. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam

    Science.gov (United States)

    Alaie, Seyedhamidreza; Goettler, Drew F.; Jiang, Ying-Bing; Abbas, Khawar; Ghasemi Baboly, Mohammadhosein; Anjum, D. H.; Chaieb, S.; Leseman, Zayd C.

    2015-02-01

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties. In this work, Pt deposited by FIB is characterized thermally, structurally, and chemically. Its thermal conductivity is found to be substantially lower than the bulk value of Pt, 7.2 W m-1 K-1 versus 71.6 W m-1 K-1 at room temperature. The low thermal conductivity is attributed to the nanostructure of the material and its chemical composition. Pt deposited by FIB is shown, via aberration corrected TEM, to be a segregated mix of nanocrystalline Pt and amorphous C with Ga and O impurities. Ga impurities mainly reside in the Pt while O is homogeneously distributed throughout. The Ga impurity, small grain size of the Pt, and the amorphous carbon between grains are the cause for the low thermal conductivity of this material. Since Pt deposited by FIB is a common material for affixing samples, this information can be used to assess systematic errors in thermal characterization of different nanosamples. This application is also demonstrated by thermal characterization of two carbon nanofibers and a correction using the reported thermal properties of the Pt deposited by FIB.

  14. Comparative study on Pulsed Laser Deposition and Matrix Assisted Pulsed Laser Evaporation of urease thin films

    International Nuclear Information System (INIS)

    Smausz, Tomi; Megyeri, Gabor; Kekesi, Renata; Vass, Csaba; Gyoergy, Eniko; Sima, Felix; Mihailescu, Ion N.; Hopp, Bela

    2009-01-01

    Urease thin films were produced by Matrix Assisted Pulsed Laser Evaporation (MAPLE) and Pulsed Laser Deposition from two types of targets: frozen water solutions of urease with different concentrations (1-10% m/v) and pure urease pellets. The fluence of the ablating KrF excimer laser was varied between 300 and 2200 mJ/cm 2 . Fourier transform infrared spectra of the deposited films showed no difference as compared to the original urease. Morphologic studies proved that the films consist of a smooth 'base' layer with embedded micrometer-sized droplets. Absorption-coefficient measurements contradicted the traditional 'absorptive matrix' model for MAPLE deposition. The laser energy was absorbed by urease clusters leading to a local heating-up and evaporation of the frozen matrix from the uppermost layer accompanied by the release of dissolved urease molecules. Significant enzymatic activity of urease was preserved only during matrix assisted transfer.

  15. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Tseng, H. Y.; Yang, W. C.; Lee, P. Y.; Lin, C. W.; Cheng, Kai-Yuan; Hsieh, K. C.; Cheng, K. Y.; Hsu, C.-H.

    2016-08-01

    GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

  16. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, H. Y.; Yang, W. C.; Lee, P. Y.; Lin, C. W.; Cheng, Kai-Yuan; Hsieh, K. C.; Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw [Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Hsu, C.-H. [Division of Scientific Research, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2016-08-22

    GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

  17. Properties of TiN coatings deposited by the method of condensation with ion bombardment accompanied by high-energy ion beam

    International Nuclear Information System (INIS)

    Obrezkov, O.I.; Vershok, B.A.; Dormashev, A.B.; Margulev, I.Ya.; Molchanova, S.A.; Andreev, E.S.; Dervuk, V.V.

    2002-01-01

    Vacuum-sputtering adapted commercial facility based coating of stainless steel with titanium nitride followed two procedures: ion bombardment condensation (IBC) and IBC under simultaneous effect of ion beam (IB). The deposition rate was equal to 0.1 μm min -1 ; the investigated coatings were characterized by 2.5 μm depth. Comparison analysis of features and characteristics of the specimens, as well as, full-scale tests of a coated cutting tool enabled to make conclusions about advantages of application of IB assisted IBC technology in contrast to the reference IBC technology [ru

  18. Electron beam lithographic modeling assisted by artificial intelligence technology

    Science.gov (United States)

    Nakayamada, Noriaki; Nishimura, Rieko; Miura, Satoru; Nomura, Haruyuki; Kamikubo, Takashi

    2017-07-01

    We propose a new concept of tuning a point-spread function (a "kernel" function) in the modeling of electron beam lithography using the machine learning scheme. Normally in the work of artificial intelligence, the researchers focus on the output results from a neural network, such as success ratio in image recognition or improved production yield, etc. In this work, we put more focus on the weights connecting the nodes in a convolutional neural network, which are naturally the fractions of a point-spread function, and take out those weighted fractions after learning to be utilized as a tuned kernel. Proof-of-concept of the kernel tuning has been demonstrated using the examples of proximity effect correction with 2-layer network, and charging effect correction with 3-layer network. This type of new tuning method can be beneficial to give researchers more insights to come up with a better model, yet it might be too early to be deployed to production to give better critical dimension (CD) and positional accuracy almost instantly.

  19. Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    Iqbal, M. Z.; Kumar Singh, Arun; Iqbal, M. W.; Seo, Sunae; Eom, Jonghwa

    2012-01-01

    We have grown graphene by chemical vapor deposition (CVD) and transferred it onto Si/SiO 2 substrates to make tens of micron scale devices for Raman spectroscopy study. The effect of electron beam (e-beam) irradiation of various doses (600 to 12 000 μC/cm 2 ) on CVD grown graphene has been examined by using Raman spectroscopy. It is found that the radiation exposures result in the appearance of the strong disorder D band attributed the damage to the lattice. The evolution of peak frequencies, intensities, and widths of the main Raman bands of CVD graphene is analyzed as a function of defect created by e-beam irradiation. Especially, the D and G peak evolution with increasing radiation dose follows the amorphization trajectory, which suggests transformation of graphene to the nanocrystalline and then to amorphous form. We have also estimated the strain induced by e-beam irradiation in CVD graphene. These results obtained for CVD graphene are in line with previous findings reported for the mechanically exfoliated graphene [D. Teweldebrhan and A. A. Balandin, Appl. Phys. Lett. 94, 013101 (2009)]. The results have important implications for CVD graphene characterization and device fabrication, which rely on the electron microscopy.

  20. Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings

    Directory of Open Access Journals (Sweden)

    Januś M.

    2015-06-01

    Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

  1. SERS analysis of Ag nanostructures produced by ion-beam deposition

    Science.gov (United States)

    Atanasov, P. A.; Nedyalkov, N. N.; Nikov, Ru G.; Grüner, Ch; Rauschenbach, B.; Fukata, N.

    2018-03-01

    This study deals with the development of a novel technique for formation of advanced Ag nanostructures (NSs) to be applied to high-resolution analyses based on surface enhanced Raman scattering (SERS). It has direct bearing on human health and food quality, e.g., monitoring small amount or traces of pollutants or undesirable additives. Three types of nanostructured Ag samples were produced using ion-beam deposition at glancing angle (GLAD) on quartz. All fabricated structures were covered with BI-58 pesticide (dimethoate) or Rhodamine 6G (R6G) for testing their potential for use as substrates for (SERS).

  2. The role of electron-stimulated desorption in focused electron beam induced deposition

    DEFF Research Database (Denmark)

    van Dorp, Willem F.; Hansen, Thomas Willum; Wagner, Jakob Birkedal

    2013-01-01

    We present the results of our study about the deposition rate of focused electron beam induced processing (FEBIP) as a function of the substrate temperature with the substrate being an electron-transparent amorphous carbon membrane. When W(CO)6 is used as a precursor it is observed that the growth...... experiments compared to literature values is consistent with earlier findings by other authors. The discrepancy is attributed to electron-stimulated desorption, which is known to occur during electron irradiation. The data suggest that, of the W(CO)6 molecules that are affected by the electron irradiation......, the majority desorbs from the surface rather than dissociates to contribute to the deposit. It is important to take this into account during FEBIP experiments, for instance when determining fundamental process parameters such as the activation energy for desorption....

  3. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Podestà, Alessandro, E-mail: alessandro.podesta@mi.infn.it, E-mail: pmilani@mi.infn.it; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo, E-mail: alessandro.podesta@mi.infn.it, E-mail: pmilani@mi.infn.it [Centro Interdisciplinare Materiali e Interfacce Nanostrutturati (C.I.Ma.I.Na.), Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy)

    2015-12-21

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO{sub 2}) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.

  4. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    International Nuclear Information System (INIS)

    Podestà, Alessandro; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo

    2015-01-01

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO 2 ) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility

  5. ZnS thin films fabricated by electron beam evaporation with glancing angle deposition

    Science.gov (United States)

    Wang, Sumei; Xia, Guodong; Shao, Jianda; Fan, Zhengxiu

    2006-02-01

    GLAD ZnS films prepared by electron beam evaporation method with glancing angle deposition technique are reported. The influence of different oblique angle on the structure and optical properties is investigated using atomic force microscopy and transmittance spectra. The GLAD ZnS films exhibit a porous structure with isolated island and columnar formed. The surface roughness increases with the increase of oblique angle. The refractive indexes of GLAD ZnS films are lower than that of corresponding bulk materials. The maximal birefringence is obtained at oblique angle α=80 °, which is ascribed to the orientated growth and anistropic structure of GLAD films. Therefore, the glancing angle deposition technique is a promising technique to obtain enhanced birefringence property.

  6. Crystal structure of TiNi nanoparticles obtained by Ar ion beam deposition

    International Nuclear Information System (INIS)

    Castro, A. Torres; Cuellar, E. Lopez; Mendez, U. Ortiz; Yacaman, M. Jose

    2008-01-01

    Nanoparticles are a state of matter that have properties different from either molecules or bulk solids, turning them into a very interesting class of materials to study. In the present work, the crystal structure of TiNi nanoparticles obtained by ion beam deposition is characterized. TiNi nanoparticles were obtained from TiNi wire samples by sputtering with Ar ions using a Gatan precision ion polishing system. The TiNi nanoparticles were deposited on a Lacey carbon film that was used for characterization by transmission electron microscopy. The nanoparticles were characterized by high-resolution transmission electron microscopy, high-angle annular dark-field imaging, electron diffraction, scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy. Results of nanodiffraction seem to indicate that the nanoparticles keep the same B2 crystal structure as the bulk material but with a decreased lattice parameter

  7. Compositional tuning of yttrium iron garnet film properties by multi-beam pulsed laser deposition

    International Nuclear Information System (INIS)

    Sposito, Alberto; Stenning, Gavin B.G.; Gregory, Simon A.; Groot, Peter A.J. de; Eason, Robert W.

    2014-01-01

    We report an investigation of the effects of variation of composition on the properties of yttrium iron garnet films grown on yttrium aluminium garnet substrates by multi-beam pulsed laser deposition. The ferromagnetic resonance linewidth is used as a quality factor: a significant variation is noticed from changing composition, with an experimentally observed optimum at Y 3.5 Fe 4.5 O 12 . - Highlights: • Compositional tuning of materials is demonstrated via multi-pulsed laser deposition. • YIG (yttrium iron garnet) films with variable composition are prepared. • Variation of YIG properties with changing composition is investigated. • Growth dynamics of YIG is investigated to optimise FMR (ferromagnetic resonance). • FMR linewidth is minimised approximately at Y 3.5 Fe 4.5 O 12

  8. Compositional tuning of yttrium iron garnet film properties by multi-beam pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sposito, Alberto, E-mail: as11g10@orc.soton.ac.uk [Optoelectronics Research Centre, University of Southampton, Southampton SO171BJ (United Kingdom); Stenning, Gavin B.G.; Gregory, Simon A.; Groot, Peter A.J. de [Physics and Astronomy, University of Southampton, Southampton SO171BJ (United Kingdom); Eason, Robert W. [Optoelectronics Research Centre, University of Southampton, Southampton SO171BJ (United Kingdom)

    2014-10-01

    We report an investigation of the effects of variation of composition on the properties of yttrium iron garnet films grown on yttrium aluminium garnet substrates by multi-beam pulsed laser deposition. The ferromagnetic resonance linewidth is used as a quality factor: a significant variation is noticed from changing composition, with an experimentally observed optimum at Y{sub 3.5}Fe{sub 4.5}O{sub 12}. - Highlights: • Compositional tuning of materials is demonstrated via multi-pulsed laser deposition. • YIG (yttrium iron garnet) films with variable composition are prepared. • Variation of YIG properties with changing composition is investigated. • Growth dynamics of YIG is investigated to optimise FMR (ferromagnetic resonance). • FMR linewidth is minimised approximately at Y{sub 3.5}Fe{sub 4.5}O{sub 12}.

  9. Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

    International Nuclear Information System (INIS)

    Auciello, O.; Ameen, M.S.; Kingon, A.I.

    1989-01-01

    Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr + or Xe + ions is preferable to the most commonly used Ar + ions, since the undesirable phenomena mentioned above are minimized for the first two ions. These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs

  10. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M.; Lin, Y.P.; Schmidt, H.; Liu, Y.L.; Barr, T.; Chang, R.P.H.

    1992-01-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described

  11. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    KAUST Repository

    Batra, Nitin M

    2015-10-09

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode–interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode–nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  12. CdS thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

  13. CdS thin films prepared by laser assisted chemical bath deposition

    International Nuclear Information System (INIS)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A.; Krishnan, B.; Avellaneda, D.; Castillo, G.A.; Das Roy, T.K.; Shaji, S.

    2015-01-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties

  14. Ferromagnetic resonance of Py deposited on ZnO grown by molecular beam epitaxy

    Science.gov (United States)

    D'Ambrosio, Sophie; Chen, Lin; Nakayama, Hiroyasu; Matsukura, Fumihiro; Dietl, Tomasz; Ohno, Hideo

    2015-09-01

    We report on the growth of a high-quality single crystal ZnO film on an a-plane sapphire substrate by plasma-assisted molecular beam epitaxy and the properties of a sputtered permalloy (Py) film on the ZnO investigated by ferromagnetic resonance. The results show that one can obtain the Py with a reasonable quality on ZnO, which is expected to provide a testbed system for the investigation of the spin current-related phenomena in materials with a weak spin-orbit interaction.

  15. Hybrid deburring process assisted by a large pulsed electron beam (LPEB) for laser-fabricated patterned metal masks

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jisoo; Park, Hyung Wook, E-mail: hwpark@unist.ac.kr

    2015-12-01

    Highlights: • Patterned metal masks made of AISI 304 stainless steel were fabricated by fiber-laser. • Abrasive deburring alone, large pulsed electron beam (LPEB) deburring alone, and hybrid deburring process assisted by LPEB were performed. • A numerical heat transfer model for LPEB irradiation approximately predicted the melting depths and experimental studies revealed the limitation on eliminating burr size of LPEB irradiation alone. • The size of remaining burrs after the hybrid deburring process was reduced to7.2 μm. • The surface roughness (Ra) following the hybrid deburring process was reduced from 640 nm to 121 nm indicating a relatively uniform surface texture. - Abstract: The quality of pixels on displays and semiconductors is directly related to the surface quality of the patterned metal mask used. Burrs generated on the patterned metal mask can degrade the quality of pixels on microelectronic devices during the deposition process. In this study, experimental observations of abrasive deburring along with large pulsed electron beam (LPEB) irradiation were performed to evaluate the deburring effects on patterned metal masks. Numerical modeling of LPEB irradiation approximately predicted melting depths and the experimental studies revealed limitations in the size of burrs removed by LPEB irradiation. Thus a LPEB-assisted hybrid deburring process was developed to eliminate burrs of metal masks regardless of their size. The size of burrs remaining after the LPEB-assisted hybrid deburring process was reduced to approximately 7.2 μm which was much less than the results of abrasive deburring alone (38.01 μm). The burr size distribution was reduced by 85% and surface roughness (Ra) was decreased from 640 nm to 121 nm, indicating a uniform surface texture.

  16. Electron beam excitation assisted optical microscope with ultra-high resolution.

    Science.gov (United States)

    Inami, Wataru; Nakajima, Kentaro; Miyakawa, Atsuo; Kawata, Yoshimasa

    2010-06-07

    We propose electron beam excitation assisted optical microscope, and demonstrated its resolution higher than 50 nm. In the microscope, a light source in a few nanometers size is excited by focused electron beam in a luminescent film. The microscope makes it possible to observe dynamic behavior of living biological specimens in various surroundings, such as air or liquids. Scan speed of the nanometric light source is faster than that in conventional near-field scanning optical microscopes. The microscope enables to observe optical constants such as absorption, refractive index, polarization, and their dynamic behavior on a nanometric scale. The microscope opens new microscopy applications in nano-technology and nano-science.

  17. Electron postgrowth irradiation of platinum-containing nanostructures grown by electron-beam-induced deposition from Pt(PF3)4

    NARCIS (Netherlands)

    Botman, A.; Hagen, C.W.; Li, J.; Thiel, B.L.; Dunn, K.A.; Mulders, J.J.L.; Randolph, S.; Toth, M.

    2009-01-01

    The material grown in a scanning electron microscope by electron beam-induced deposition (EBID) using Pt(PF3)4 precursor is shown to be electron beam sensitive. The effects of deposition time and postgrowth electron irradiation on the microstructure and resistivity of the deposits were assessed by

  18. Smooth silk fibroin nanofilm deposited by 1064-nm pulsed laser beam from an opaque target

    International Nuclear Information System (INIS)

    Nozaki, R.; Nakayama, S.; Senna, M.

    2013-01-01

    In an attempt to prepare smooth nanostructured thin films of silk fibroin (SF) by near-infrared (NIR) pulsed laser deposition, an opaque target was prepared from an emulsified aqueous solution of SF. Upon irradiation of 1064-nm pulsed laser beam at its fluence 5 J/cm 2 , a thin film of SF was deposited on the Si(100) substrate with its root-mean-square surface roughness, 0.37 nm, smoother than those obtained from a compressed target of SF powders by approximately an order of magnitude. The attainment of an extra-smooth film from the opaque target was discussed in terms of multiple Mie scattering of the incident NIR beam, leading to an increase in the plasma density, intensified optical breakdown, ablation of better dispersed SF molecular units, and a film with more intensive intermolecular cross-linking. - Highlights: • Thin film of silk fibroin with its RMS surface roughness, R rms , 0.37 nm was obtained. • The use of a target from an emulsified solution of SF was the key issue. • Mechanism involved was elucidated in terms of enhanced Mie scattering

  19. Multi-beam pulsed laser deposition for advanced thin-film optical waveguides

    International Nuclear Information System (INIS)

    Eason, R W; May-Smith, T C; Sloyan, K A; Gazia, R; Darby, M S B; Sposito, A; Parsonage, T L

    2014-01-01

    We discuss our progress in the use of multiple laser beams and multiple targets for the pulsed laser deposition of thin films for waveguide laser and magneto-optic applications. In contrast to the more widely used single-beam/single-target geometries, having more than one laser-produced plume can allow tuning of the material properties and complex engineering of the deposited thin films. For optical applications—the majority of the work reported here—dopants can be selectively introduced, lattice mismatch and residual strain can be compensated, which is an important factor for successful growth of thin films of ∼ tens of microns thickness, and refractive index values can be adjusted for fabrication of sophisticated waveguiding structures. We discuss mixed, layered, superlattice and Bragg reflector growth, which involve out-of-plane engineering of the film structure, and in-plane engineered geometries for designs relevant to thin-film disc lasing devices. Finally we briefly discuss our most recent use of multi-plume growth for magneto-optic thin films, which involves compositional tuning of final magnetic properties. (paper)

  20. Ion beam deposition of DLC and nitrogen doped DLC thin films for enhanced haemocompatibility on PTFE

    International Nuclear Information System (INIS)

    Srinivasan, S.; Tang, Y.; Li, Y.S.; Yang, Q.; Hirose, A.

    2012-01-01

    Diamond-like carbon (DLC) and N-doped DLC (DLC:N) thin films have been synthesized on polytetrafluroethylene (PTFE) and silicon wafers using ion beam deposition. Raman spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy and scanning electron microscopy were used to study the structural and morphological properties of the coated surface. The results show that the ion beam deposited DLC thin films exhibit high hardness and Young's modulus, low coefficient of friction and high adhesion to the substrate. Low concentration of nitrogen doping in DLC improves the mechanical properties and reduces the surface roughness. DLC coating decreases the surface energy and improves the wettability of PTFE. The platelet adhesion results show that the haemocompatibility of DLC coated PTFE, especially DLC:N coated PTFE, has been significantly enhanced as compared with uncoated PTFE. SEM observations show that the platelet reaction on the DLC and DLC:N coated PTFE was minimized as the platelets were much less aggregated and activated.

  1. Investigations of high mobility single crystal chemical vapor deposition diamond for radiotherapy photon beam monitoring

    Science.gov (United States)

    Tromson, D.; Descamps, C.; Tranchant, N.; Bergonzo, P.; Nesladek, M.; Isambert, A.

    2008-03-01

    The intrinsic properties of diamond make this material theoretically very suitable for applications in medical physics. Until now ionization chambers have been fabricated from natural stones and are commercialized by PTW, but their fairly high costs and long delivery times have often limited their use in hospital. The properties of commercialized intrinsic polycrystalline diamond were investigated in the past by many groups. The results were not completely satisfactory due to the nature of the polycrystalline material itself. In contrast, the recent progresses in the growth of high mobility single crystal synthetic diamonds prepared by chemical vapor deposition (CVD) technique offer new alternatives. In the framework of the MAESTRO project (Methods and Advanced Treatments and Simulations for Radio Oncology), the CEA-LIST is studying the potentialities of synthetic diamond for new techniques of irradiation such as intensity modulated radiation therapy. In this paper, we present the growth and characteristics of single crystal diamond prepared at CEA-LIST in the framework of the NoRHDia project (Novel Radiation Hard CVD Diamond Detector for Hadrons Physics), as well as the investigations of high mobility single crystal CVD diamond for radiotherapy photon beam monitoring: dosimetric analysis performed with the single crystal diamond detector in terms of stability and repeatability of the response signal, signal to noise ratio, response speed, linearity of the signal versus the absorbed dose, and dose rate. The measurements performed with photon beams using radiotherapy facilities demonstrate that single crystal CVD diamond is a good alternative for air ionization chambers for beam quality control.

  2. Characterization of conducting polymer films grown via surface polymerization by ion-assisted deposition

    Science.gov (United States)

    Tepavcevic, Sanja

    2006-04-01

    Optimization of photonic and electronic devices based on conductive polymers, such as polythiophene and polyphenyl, requires the development of processing methods that can control both film chemistry and morphology on the nanoscale. One such method is explored in this thesis: surface polymerization by ion-assisted deposition (SPIAD). Polythiophene and polyphenyl thin films are grown on a silicon surface by SPIAD which uses hyperthermal, mass-selected thiophene cations coincident with alpha-thermal beam of aterthiophene (3T) or p-terphenyl (3P) neutrals. Mass spectrometry and x-ray photoelectron spectroscopy are used to verify polymerization of both 3T and 3P. The optimal conditions for the most efficient polymerization reaction and film growth are found by varying ion/neutral ratio and ion energy. The electronic structures of these films are probed by ultraviolet photoelectron spectroscopy (UPS) and polarized near-edge x-ray absorption fine structure spectroscopy (NEXAFS). The conducting polymer films formed by SPIAD display new valence band features resulting from a reduction in both their band gap and barrier to hole injection. These changes in film electronic structure result from an increase in the electron conjugation length and other changes in film structure induced by SPIAD. Scanning electron microscopy and x-ray diffraction are used to demonstrate that SPIAD can control the overall polythiophene and polyphenyl film morphology through the mediation of adsorption, diffusion, sublimation (desorption), and other thermal film growth events by ion-induced processes including polymerization, sputtering, bond breakage, and energetic mixing. Predicting the electronic properties, growth mechanism and morphology of the SPIAD films should be possible through computer simulations of the controlling phenomenon. Study with first principles density functional theory-molecular dynamics (DFT-MD) simulations indicates that polymerization and fragmentation of ions and

  3. Hydroxyapatite thin films grown by pulsed laser deposition and matrix assisted pulsed laser evaporation: Comparative study

    Science.gov (United States)

    Popescu-Pelin, G.; Sima, F.; Sima, L. E.; Mihailescu, C. N.; Luculescu, C.; Iordache, I.; Socol, M.; Socol, G.; Mihailescu, I. N.

    2017-10-01

    Pulsed Laser Deposition (PLD) and Matrix Assisted Pulsed Laser Evaporation (MAPLE) techniques were applied for growing hydroxyapatite (HA) thin films on titanium substrates. All experiments were conducted in a reaction chamber using a KrF* excimer laser source (λ = 248 nm, τFWHM ≈ 25 ns). Half of the samples were post-deposition thermally treated at 500 °C in a flux of water vapours in order to restore crystallinity and improve adherence. Coating surface morphologies and topographies specific to the deposition method were evidenced by scanning electron, atomic force microscopy investigations and profilometry. They were shown to depend on deposition technique and also on the post-deposition treatment. Crystalline structure of the coatings evaluated by X-ray diffraction was improved after thermal treatment. Biocompatibility of coatings, cellular adhesion, proliferation and differentiation tests were conducted using human mesenchymal stem cells (MSCs). Results showed that annealed MAPLE deposited HA coatings were supporting MSCs proliferation, while annealed PLD obtained films were stimulating osteogenic differentiation.

  4. Aerosol assisted chemical vapor deposition using nanoparticle precursors: a route to nanocomposite thin films.

    Science.gov (United States)

    Palgrave, Robert G; Parkin, Ivan P

    2006-02-08

    Gold nanoparticle and gold/semiconductor nanocomposite thin films have been deposited using aerosol assisted chemical vapor deposition (CVD). A preformed gold colloid in toluene was used as a precursor to deposit gold films onto silica glass. These nanoparticle films showed the characteristic plasmon absorption of Au nanoparticles at 537 nm, and scanning electron microscopic (SEM) imaging confirmed the presence of individual gold particles. Nanocomposite films were deposited from the colloid concurrently with conventional CVD precursors. A film of gold particles in a host tungsten oxide matrix resulted from co-deposition with [W(OPh)(6)], while gold particles in a host titania matrix resulted from co-deposition with [Ti(O(i)Pr)(4)]. The density of Au nanoparticles within the film could be varied by changing the Au colloid concentration in the original precursor solution. Titania/gold composite films were intensely colored and showed dichromism: blue in transmitted light and red in reflected light. They showed metal-like reflection spectra and plasmon absorption. X-ray photoelectron spectroscopy and energy-dispersive X-ray analysis confirmed the presence of metallic gold, and SEM imaging showed individual Au nanoparticles embedded in the films. X-ray diffraction detected crystalline gold in the composite films. This CVD technique can be readily extended to produce other nanocomposite films by varying the colloids and precursors used, and it offers a rapid, convenient route to nanoparticle and nanocomposite thin films.

  5. Progress on channel spark development and application of pulsed electron beam deposition (PED) in the field of medical coating work

    International Nuclear Information System (INIS)

    Schultheiss, Christoph; Buth, Lothar-H.-O.; Frey, Wolfgang; Bluhm, Hansjoachim; Mayer, Hanns-G.

    2002-01-01

    A promising source for Pulsed Electron Beam Deposition (PED) is the channel spark. Recent improvements helped to reduce beam instabilities which up to now have limited the life time of the system. The beam power could be increased and because of better beam quality the transport length of the beam is increased from 1 to several centimeters (up to 10 cm). Together with other improvements on the triggering system and beam transport in dielectric tubes, the channel spark approaches industrial standards. An overview of actual applications in research and industry will be presented. An attractive feature of the pulsed electron beam thin film deposition is the conservation of stoichiometry even during deposition of multi-component earth-alkali and alkali glasses. Specially developed glasses like BIOGLAS registered have the ability to anchor soft living tissue at the surface. In form of a bulk material bio active glasses are brittle limiting its applications. Contrary to brittle bulk material a thin layers on medical implants exhibits reliable bio-functionality. Coating of implants with this category of materials is subject of the European INCOMED project (Innovative Coating of Medical Implants with Soft Tissue Anchoring Ability) which just has started

  6. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); CIIDIT—Universidad Autónoma de Nuevo León, Apodaca, Nuevo León (Mexico); Garcia, L.V. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); Loredo, S.L. [Centro de Investigación en Materiales Avanzados (CIMAV), Unidad Monterrey, PIIT, Apodaca, Nuevo León (Mexico); Krishnan, B. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); CIIDIT—Universidad Autónoma de Nuevo León, Apodaca, Nuevo León (Mexico); and others

    2017-01-30

    Highlights: • Antimony sulfide thin films were prepared by normal CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • These films were photoconductive. - Abstract: Antimony sulfide (Sb{sub 2}S{sub 3}) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb{sub 2}S{sub 3} thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV–vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb{sub 2}S{sub 3} thin films for optoelectronic applications.

  7. Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

    International Nuclear Information System (INIS)

    Li Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

    2013-01-01

    Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al 2 O 3 , ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and α-Al 2 O 3 crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

  8. Deposition and characterization of CrN thin films by reactive ion beam sputtering

    Science.gov (United States)

    Dhawan, Rajnish; Rai, Sanjay

    2017-05-01

    In this present work the characteristics of Chromium nitride (CrN) thin films on Silicon substrate were investigated as function of Nitrogen gas flow rate. Chromium nitride (CrN) thin films were fabricated on single crystal silicon substrates by using the reactive ion beam sputtering at room temperature. Effect of N2 gas flow on microstructure, surface roughness and density were investigated by GIXRR and GIXRD by depositing [CrN]x4 films at various N2 gas flow from 1sccm to 4sccm while keeping the Ar flow constant at 2.5 sccm. The effects of N2 gas flows on the deposition rate showed that the deposition rate decreases with the increase of nitrogen gas flow. X-ray study shows that the surface roughness and density of the CrN films increases with the increase of N2 gas flows. It is suggested that the ion and particles bombardment at low gas pressures cause a smoother surface.

  9. Power deposition by neutral beam injected fast ions in field-reversed configurations

    International Nuclear Information System (INIS)

    Takahashi, Toshiki; Kato, Takayuki; Kondoh, Yoshiomi; Iwasawa, Naotaka

    2004-01-01

    The effects of Coulomb collisions on neutral beam (NB) injected fast ions into field-reversed configuration (FRC) plasmas are investigated by calculating the single particle orbits, where the ions are subject to the slowing-down and pitch-angle collisions. The Monte Carlo method is used for the pitch-angle scattering, and the friction term is added to the equation of motion to show the effects of the slowing-down collision, such as the deposited power profile. The calculation parameters used are relevant to the NB injection on the FRC injection experiment device [T. Asai, Y. Suzuki, T. Yoneda, F. Kodera, M. Okubo, and S. Goto, Phys. Plasmas 7, 2294 (2000)]. It is found that the dominant local power deposition occurs in the open field region between the X point and the mirror point because of a concentration of fast ions and a longer duration travel at the mirror reflection point. In the present calculation, the maximum deposited power to the FRC plasma is about 10% of the injected power. Although the pitch-angle scattering by Coulomb collision destroys the mirror confinement of NB injected fast ions, this effect is found to be negligible. The loss mechanism due to nonadiabatic fast ion motion, which is intrinsic in nonuniform FRC plasmas, has a much greater effect than the pitch-angle scattering by Coulomb collision

  10. Reduction of thermal expansion in Z-pinches by electron beam assisted magnetic field generation

    International Nuclear Information System (INIS)

    Heikkinen, J.A.; Karttunen, S.J.

    1989-01-01

    Weak radial expansion of a Z-pinch plasma column during its strong initial ohmic heating phase is expected when the generation of a confining magnetic field is assisted by a correctly formed electron beam pulse. Appropriate one-dimensional magnetohydrodynamic equations are numerically solved, and the observed increase of plasma radius as a function of time for various discharge parameters is compared to a normal Z-pinch discharge initiation. (author)

  11. Observation of strong leakage reduction in crystal assisted collimation of the SPS beam

    Directory of Open Access Journals (Sweden)

    W. Scandale

    2015-09-01

    Full Text Available In ideal two-stage collimation systems, the secondary collimator–absorber should have its length sufficient to exclude practically the exit of halo particles with large impact parameters. In the UA9 experiments on the crystal assisted collimation of the SPS beam a 60 cm long tungsten bar is used as a secondary collimator–absorber which is insufficient for the full absorption of the halo protons. Multi-turn simulation studies of the collimation allowed to select the position for the beam loss monitor downstream the collimation area where the contribution of particles deflected by the crystal in channeling regime but emerging from the secondary collimator–absorber is considerably reduced. This allowed observation of a strong leakage reduction of halo protons from the SPS beam collimation area, thereby approaching the case with an ideal absorber.

  12. Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

    International Nuclear Information System (INIS)

    Palla-Papavlu, A.; Rusen, L.; Dinca, V.; Filipescu, M.; Lippert, T.; Dinescu, M.

    2014-01-01

    In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm 2 the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

  13. High temperature dielectric properties of (BxNyOz thin films deposited using ion source assisted physical vapor deposition

    Directory of Open Access Journals (Sweden)

    N. Badi

    2015-12-01

    Full Text Available The dielectric integrity has been one of the major obstacle in bringing out capacitor devices with suitable performance characteristics at high temperatures. In this paper, BxNyOz dielectric films for high temperature capacitors solutions are investigated. The films were grown on silicon substrate by using ion source assisted physical vapor deposition technique. The as-grown films were characterized by SEM, XRD, and XPS. The capacitor structures were fabricated using BxNyOz as a dielectric and titanium as metal electrodes. The elaborated devices were subjected to electrical and thermal characterization. They exhibited low electrical loss and very good stability when subjected to high temperature for a prolonged period of time.

  14. Electrochemically assisted deposition of strontium modified magnesium phosphate on titanium surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Meininger, M. [Department for Functional Materials in Medicine and Dentistry, University of Würzburg, Pleicherwall 2, D-97070 Würzburg (Germany); Wolf-Brandstetter, C. [Max Bergmann Center for Biomaterials, Technical University of Dresden, Budapester Straße 27, D-01069 Dresden (Germany); Zerweck, J.; Wenninger, F.; Gbureck, U.; Groll, J. [Department for Functional Materials in Medicine and Dentistry, University of Würzburg, Pleicherwall 2, D-97070 Würzburg (Germany); Moseke, C., E-mail: claus.moseke@fmz.uni-wuerzburg.de [Department for Functional Materials in Medicine and Dentistry, University of Würzburg, Pleicherwall 2, D-97070 Würzburg (Germany)

    2016-10-01

    Electrochemically assisted deposition was utilized to produce ceramic coatings on the basis of magnesium ammonium phosphate (struvite) on corundum-blasted titanium surfaces. By the addition of defined concentrations of strontium nitrate to the coating electrolyte Sr{sup 2+} ions were successfully incorporated into the struvite matrix. By variation of deposition parameters it was possible to fabricate coatings with different kinetics of Sr{sup 2+} into physiological media, whereas the release of therapeutically relevant strontium doses could be sustained over several weeks. Morphological and crystallographic examinations of the immersed coatings revealed that the degradation of struvite and the release of Sr{sup 2+} ions were accompanied by a transformation of the coating to a calcium phosphate based phase similar to low-crystalline hydroxyapatite. These findings showed that strontium doped struvite coatings may provide a promising degradable coating system for the local application of strontium or other biologically active metal ions in the implant–bone interface. - Highlights: • Sr-doped struvite coatings have been deposited on titanium by electrochemically assisted deposition. • Sr content can be adjusted by means of process time, current density and pulse mode. • Sr-doped coatings release therapeutically relevant Sr doses in physiological media for several weeks. • During immersion in physiological media Sr-doped struvite coatings transform into a low crystalline calcium phosphate phase.

  15. Optimization of spray deposition and Tetranychus urticae control with air assisted and electrostatic sprayer

    Directory of Open Access Journals (Sweden)

    Denise Tourino Rezende de Cerqueira

    Full Text Available ABSTRACT: Improved spray deposition can be attained by electrostatically charging spray droplets, which increases the attraction of droplets to plants and decreases operator exposure to pesticide and losses to the environment. However, this technique alone is not sufficient to achieve desirable penetration of the spray solution into the crop canopy; thus, air assistance can be added to the electrostatic spraying to further improve spray deposition. This study was conducted to compare different spraying technologies on spray deposition and two-spotted spider mite control in cut chrysanthemum. Treatments included in the study were: conventional TJ 8003 double flat fan nozzles, conventional TXVK-3 hollow cone nozzles, semi-stationary motorized jet launched spray with electrostatic spray system (ESS and air assistance (AA, and semi-stationary motorized jet launched spray with AA only (no ESS. To evaluate the effect of these spraying technologies on the control of two-spotted spider mite, a control treatment was included that did not receive an acaricide application. The AA spraying technology, with or without ESS, optimized spray deposition and provided satisfactory two-spotted spider mite control up to 4 days after application.

  16. Electrochemically assisted deposition of strontium modified magnesium phosphate on titanium surfaces

    International Nuclear Information System (INIS)

    Meininger, M.; Wolf-Brandstetter, C.; Zerweck, J.; Wenninger, F.; Gbureck, U.; Groll, J.; Moseke, C.

    2016-01-01

    Electrochemically assisted deposition was utilized to produce ceramic coatings on the basis of magnesium ammonium phosphate (struvite) on corundum-blasted titanium surfaces. By the addition of defined concentrations of strontium nitrate to the coating electrolyte Sr 2+ ions were successfully incorporated into the struvite matrix. By variation of deposition parameters it was possible to fabricate coatings with different kinetics of Sr 2+ into physiological media, whereas the release of therapeutically relevant strontium doses could be sustained over several weeks. Morphological and crystallographic examinations of the immersed coatings revealed that the degradation of struvite and the release of Sr 2+ ions were accompanied by a transformation of the coating to a calcium phosphate based phase similar to low-crystalline hydroxyapatite. These findings showed that strontium doped struvite coatings may provide a promising degradable coating system for the local application of strontium or other biologically active metal ions in the implant–bone interface. - Highlights: • Sr-doped struvite coatings have been deposited on titanium by electrochemically assisted deposition. • Sr content can be adjusted by means of process time, current density and pulse mode. • Sr-doped coatings release therapeutically relevant Sr doses in physiological media for several weeks. • During immersion in physiological media Sr-doped struvite coatings transform into a low crystalline calcium phosphate phase.

  17. Dense CdS thin films on fluorine-doped tin oxide coated glass by high-rate microreactor-assisted solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Su, Yu-Wei, E-mail: suyuweiwayne@gmail.com [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ramprasad, Sudhir [Energy Processes and Materials Division, Pacific Northwest National Laboratory, Corvallis, OR 9730 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Han, Seung-Yeol; Wang, Wei [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ryu, Si-Ok [School of Display and Chemical Engineering, Yeungnam University, 214-1 Dae-dong, Gyeonsan, Gyeongbuk 712-749 (Korea, Republic of); Palo, Daniel R. [Barr Engineering Co., Hibbing, MN 55747 (United States); Paul, Brian K. [School of Mechanical, Industrial and Manufacturing Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Chang, Chih-hung [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States)

    2013-04-01

    Continuous microreactor-assisted solution deposition is demonstrated for the deposition of CdS thin films on fluorine-doped tin oxide (FTO) coated glass. The continuous flow system consists of a microscale T-junction micromixer with the co-axial water circulation heat exchanger to control the reacting chemical flux and optimize the heterogeneous surface reaction. Dense, high quality nanocrystallite CdS thin films were deposited at an average rate of 25.2 nm/min, which is significantly higher than the reported growth rate from typical batch chemical bath deposition process. Focused-ion-beam was used for transmission electron microscopy specimen preparation to characterize the interfacial microstructure of CdS and FTO layers. The band gap was determined at 2.44 eV by UV–vis absorption spectroscopy. X-ray photon spectroscopy shows the binding energies of Cd 3d{sub 3/2}, Cd 3d{sub 5/2}, S 2P{sub 3/2} and S 2P{sub 1/2} at 411.7 eV, 404.8 eV, 162.1 eV and 163.4 eV, respectively. - Highlights: ► CdS films deposited using continuous microreactor-assisted solution deposition (MASD) ► Dense nanocrystallite CdS films can be reached at a rate of 25.2 [nm/min]. ► MASD can approach higher film growth rate than conventional chemical bath deposition.

  18. Application of Chlorine-Assisted Chemical Vapor Deposition of Diamond at Low Temperatures

    Science.gov (United States)

    Pan, Chenyu; Altemir, David A.; Margrave, John L.; Hauge, Robert H.

    1994-01-01

    Low temperature deposition of diamond has been achieved by a chlorine-assisted diamond chemical vapor deposition (CA-CVD) process. This method begins with the thermal dissociation of molecular chlorine into atomic chlorine in a resistively heated graphite furnace at temperatures between 1300 and 1500 deg. C. The atomic chlorine, upon mixing, subsequently reacts with molecular hydrogen and hydrocarbons. The rapid exchange reactions between the atomic chlorine, molecular hydrogen, and hydrocarbons give rise to the atomic hydrogen and carbon precursors required for diamond deposition. Homoepitaxial diamond growth on diamond substrates has been studied over the substrate temperature range of 100-950 C. It was found that the diamond growth rates are approximately 0.2 microns/hr in the temperature range between 102 and 300 C and that the growth rates do not decrease significantly with a decrease in substrate temperature. This is unique because the traditional diamond deposition using H2/CH4 systems usually disappears at substrate temperatures below approx. 500 deg. C. This opens up a possible route to the deposition of diamond on low-melting point materials such as aluminum and its alloys.

  19. Deposition of Methylammonium Lead Triiodide by Resonant Infrared Matrix-Assisted Pulsed Laser Evaporation

    Science.gov (United States)

    Barraza, E. Tomas; Dunlap-Shohl, Wiley A.; Mitzi, David B.; Stiff-Roberts, Adrienne D.

    2018-02-01

    Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) was used to deposit the metal-halide perovskite (MHP) CH3NH3PbI3 (methylammonium lead triiodide, or MAPbI), creating phase-pure films. Given the moisture sensitivity of these crystalline, multi-component organic-inorganic hybrid materials, deposition of MAPbI by RIR-MAPLE required a departure from the use of water-based emulsions as deposition targets. Different chemistries were explored to create targets that properly dissolved MAPbI components, were stable under vacuum conditions, and enabled resonant laser energy absorption. Secondary phases and solvent contamination in the resulting films were studied through Fourier transform infrared (FTIR) absorbance and x-ray diffraction (XRD) measurements, suggesting that lingering excess methylammonium iodide (MAI) and low-vapor pressure solvents can distort the microstructure, creating crystalline and amorphous non-perovskite phases. Thermal annealing of films deposited by RIR-MAPLE allowed for excess solvent to be evaporated from films without degrading the MAPbI structure. Further, it was demonstrated that RIR-MAPLE does not require excess MAI to create stoichiometric films with optoelectronic properties, crystal structure, and film morphology comparable to films created using more established spin-coating methods for processing MHPs. This work marks the first time a MAPLE-related technique was used to deposit MHPs.

  20. Synthesis and in vacuo deposition of iron oxide nanoparticles by microplasma-assisted decomposition of ferrocene

    International Nuclear Information System (INIS)

    Schaefer, Michael; Kumar, Ajay; Mohan Sankaran, R.; Schlaf, Rudy

    2014-01-01

    Microplasma-assisted gas-phase nucleation has emerged as an important new approach to produce high-purity, nanometer-sized, and narrowly dispersed particles. This study aims to integrate this technique with vacuum conditions to enable synthesis and deposition in an ultrahigh vacuum compatible environment. The ultimate goal is to combine nanoparticle synthesis with photoemission spectroscopy-based electronic structure analysis. Such measurements require in vacuo deposition to prevent surface contamination from sample transfer, which can be deleterious for nanoscale materials. A homebuilt microplasma reactor was integrated into an existing atomic layer deposition system attached to a surface science multi-chamber system equipped with photoemission spectroscopy. As proof-of-concept, we studied the decomposition of ferrocene vapor in the microplasma to synthesize iron oxide nanoparticles. The injection parameters were optimized to achieve complete precursor decomposition under vacuum conditions, and nanoparticles were successfully deposited. The stoichiometry of the deposited samples was characterized in situ using X-ray photoelectron spectroscopy indicating that iron oxide was formed. Additional transmission electron spectroscopy characterization allowed the determination of the size, shape, and crystal lattice of the particles, confirming their structural properties.

  1. Ion-assisted doping of 2-6 compounds during physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bube, R H [Stanford Univ., CA (USA). Dept. of Materials Science and Engineering

    1990-07-01

    This report describes a research program to (1) investigate ion-assisted doping during chemical vapor deposition of CdTe and (2) determine the influence of co-depositing ionized dopant atoms in the growth and structural and photoelectronic properties of the deposited films. In p-CdTe homo-epitaxial films, we controlled doping up to about 6 {times} 10{sup 16} cm{sup {minus}3} and 2 {times} 10{sup 17} cm{sub {minus}3} or ion-assisted depositions with As and P ions, respectively. At a growth rate of approximately 0.1 {mu}m/min, a substrate temperature of 400{degree}C, and ion energy of 60 eV, a maximum doping density was found near an ion current of 0.6{mu}A/cm{sup 2}. Related studies included elucidating the role of low-energy ion damage in the ion-assisted doping process, and investigating the decrease in carrier density near the surface of p-CdTe upon heating in vacuum, H{sub 2}, or Ar. We demonstrate the ability to make carrier density profiles and to grade junctions, and we present preliminary results from polycrystalline p-CdTe films grown on graphite and alumina substrates. We also present solar cells prepared using the p-CdTe as the collector area and n-CdS as the window layer, and we examine their photovoltaic parameters for different carrier densities and configurations in p-CdTe. 91 refs., 44 figs., 5 tabs.

  2. Characterisation of molecular thin films grown by organic molecular beam deposition

    CERN Document Server

    Bayliss, S M

    2000-01-01

    This work concerns the growth and characterisation of molecular thin films in an ultra high vacuum regime by organic molecular beam deposition (OMBD). Films of three different molecular materials are grown, namely free base phthalocyanine (H sub 2 Pc), perylene 3,4,9,10-tetracarboxylic dianhydride (PTCDA) and aluminium tris-8-hydroxyquinoline (Alq sub 3). The relationship between the growth parameters such as film thickness, growth rate, and substrate temperature during and after growth, and the structural, optical and morphological properties of the film are investigated. These investigations are carried out using various ex-situ techniques. X-ray diffraction, Raman spectroscopy and electronic absorption spectroscopy are used to probe the bulk film characteristics, whilst Nomarski microscopy and atomic force microscopy are used to study the surface morphology. Three different levels of influence of the growth parameters on the film properties are observed. In the case of H sub 2 Pc, two crystal phases are fo...

  3. Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films: Solar cell applications

    International Nuclear Information System (INIS)

    Fang Li; Chen Jing; Xu Ling; Xu Jun; Ma Zhong-Yuan; Su Wei-Ning; Yu Yao

    2013-01-01

    Cadmium sulphide (CdS) and cadmium telluride (CdTe) thin films are deposited by electron beam evaporation. Atomic force microscopy (AFM) reveals that the root mean square (RMS) roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42–2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300°C show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained. (interdisciplinary physics and related areas of science and technology)

  4. Energy deposition in TEVATRON magnets from beam losses in interaction regions

    International Nuclear Information System (INIS)

    Ginneken, A.V.

    1988-10-01

    In addition to interacting in the detector, particles produced at an interaction region also deposit energy, with less desirable consequences, in magnets and other components of the accelerator. This note briefly assesses the damage potential of these (essentially unavoidable) beam losses from the viewpoint of quenching of superconducting magnets in an upgraded Tevatron, specifically for the 1 TeV p-/ovrreverse arrowstring/p option with a luminosity of 10 31 cm/sup - 2/ sec -1 , through the results carry more generality. Related issues such as radiation damage to detector electronics or other components are not addressed here. These are thought to be less problematic at the Tevatron, as in thus far supported by operational experience. 8 refs., 10 figs

  5. Metallographic techniques for evaluation of Thermal Barrier Coatings produced by Electron Beam Physical Vapor Deposition

    International Nuclear Information System (INIS)

    Kelly, Matthew; Singh, Jogender; Todd, Judith; Copley, Steven; Wolfe, Douglas

    2008-01-01

    Thermal Barrier Coatings (TBC) produced by Electron Beam Physical Vapor Deposition (EB-PVD) are primarily applied to critical hot section turbine components. EB-PVD TBC for turbine applications exhibit a complicated structure of porous ceramic columns separated by voids that offers mechanical compliance. Currently there are no standard evaluation methods for evaluating EB-PVD TBC structure quantitatively. This paper proposes a metallographic method for preparing samples and evaluating techniques to quantitatively measure structure. TBC samples were produced and evaluated with the proposed metallographic technique and digital image analysis for columnar grain size and relative intercolumnar porosity. Incorporation of the proposed evaluation technique will increase knowledge of the relation between processing parameters and material properties by incorporating a structural link. Application of this evaluation method will directly benefit areas of quality control, microstructural model development, and reduced development time for process scaling

  6. Zirconium and zirconia thin films prepared on NaCl by ion beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yeh, S.-W.; Hsieh, T.-Y. [Institute of Materials Science and Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan (China); Mao, S.-W. [Department of Mechanical Engineering, Chinese Military Academy, Kaohsiung, Taiwan (China); Gan Dershin [Institute of Materials Science and Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan (China)], E-mail: dgan@mail.nsysu.edu.tw; Shen Pouyan [Institute of Materials Science and Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan (China)

    2007-09-15

    Nanocrystalline condensates were deposited on the NaCl (1 0 0) plane at 25-450 deg. C by radio frequency ion beam sputtering from a pure 99.9% Zr disk. The nanocondensates were identified by transmission electron microscopy to be quasi-amorphous {alpha}-Zr, {alpha}-Zr + ZrO and {alpha}-Zr + ZrO + c-ZrO{sub 2} phase assemblages with increasing substrate temperature. At 400 deg. C and under 1-20 sccm oxygen, c- and t-ZrO{sub 2} nanocondensates were assembled on NaCl (1 0 0) and showed strong preferred orientation. The c- and/or t-ZrO{sub 2} were retained by small grain size, low-valence Zr cation and 2D matrix constraint of the film.

  7. Simulation of energy deposit distribution in water for 10 and 25 MeV electron beams

    International Nuclear Information System (INIS)

    Borrell Carbonell, Maria de los Angeles.

    1977-01-01

    The Monte Carlo method was applied to transport simulation of electron beams from the exit window of a linear accelerator till the absorption by a water phantom. The distribution of energy deposit is calculated for ideal apparatus and experimental conditions. Calculations are made for a distance window-water surface of one meter, for 10 and 25 MeV monoenergetic incident electrons, and for different fields (15x15 cm 2 to 4x4 cm 2 ). Comparisons with experimental measurements obtained in comparable conditions with a Sagittaire accelerator (C.G.R.-MeV), show a good agreement concerning radial distribution and depth distribution around isodose 100%. However a certain disagreement appears in the end of depth penetration [fr

  8. Effect of ion beam energy on density, roughness & uniformity of Co film deposited using ion beam sputtering system

    Science.gov (United States)

    Dhawan, Rajnish; Rai, Sanjay; Lodha, G. S.

    2012-06-01

    Cobalt (Co) films were prepared, using ion beam sputtering technique. Films were prepared by varying beam voltage from 700 to 1100 V at room temperature. The influence of ion beam energy on the density, surface roughness and thickness uniformity of Co film was investigated. X-ray reflectivity study shows that surface roughness of film decreases with increasing beam energy and lowest surface roughness of 1.3 Å was achieved for 1000 V beam voltage at 4 cm3/min Ar gas flow. The density of the film was 93% of bulk density of Co. These ultra low roughness films are very promising for studying the magnetic properties of Co films.

  9. Studies on mass deposition effect and energy effect of biomolecules implanted by N+ ion beam

    International Nuclear Information System (INIS)

    Shao Chunlin; Yu Zengliang

    1994-05-01

    By analyzing some spectrum of tyrosine sample implanted by N + ion beam, it is deduced that the implantation N + could react with the tyrosine molecule and substitute =C 5 H- group of benzene ring to produce a N-heterocyclic compound. This compound would notably affect the residual activity of the sample. Moreover, the percentage of the product molecules to the damaged tyrosine molecules is larger than the reciprocal of the proportion of their extinction coefficients. On the other hand, by comparing the release of inorganic phosphate, it is found that the radiation sensibility for four basic nucleotides is 5'-dTMP>5'-CMP>5'-GMP>5'-AMP. to implanted nucleotides, alkali treatment and heat treatment could increase the amount of inorganic phosphate. The amount of inorganic phosphate in the nucleotide samples directly implanted by ions beam is about 60% of the total amount of inorganic phosphate that could be released from the implanted samples heated at 90 degree C for 1.75 hours. Alkali treatment could damage and split the free bases released from the implanted nucleotides, but heat treatment might repair those damaged bases. Above results prove that ions implantation to biomolecules has the mass deposition effects and energy effects

  10. Closed-Loop Process Control for Electron Beam Freeform Fabrication and Deposition Processes

    Science.gov (United States)

    Taminger, Karen M. (Inventor); Hafley, Robert A. (Inventor); Martin, Richard E. (Inventor); Hofmeister, William H. (Inventor)

    2013-01-01

    A closed-loop control method for an electron beam freeform fabrication (EBF(sup 3)) process includes detecting a feature of interest during the process using a sensor(s), continuously evaluating the feature of interest to determine, in real time, a change occurring therein, and automatically modifying control parameters to control the EBF(sup 3) process. An apparatus provides closed-loop control method of the process, and includes an electron gun for generating an electron beam, a wire feeder for feeding a wire toward a substrate, wherein the wire is melted and progressively deposited in layers onto the substrate, a sensor(s), and a host machine. The sensor(s) measure the feature of interest during the process, and the host machine continuously evaluates the feature of interest to determine, in real time, a change occurring therein. The host machine automatically modifies control parameters to the EBF(sup 3) apparatus to control the EBF(sup 3) process in a closed-loop manner.

  11. Ion assisted deposition with low-energy ions for applications in modern optics

    CERN Document Server

    Kennedy, M

    1999-01-01

    realised by a process adaptation with UV-absorbing films. A further focal point are antireflective coatings on alkali halides optics for high-power CO sub 2 -lasers. Ion assisted deposition of NaF-films at extremely low ion energies (E sub i sub o sub n approx 5 eV) qualifies antireflective coatings with minimal absorption (alpha approx 1.5 cm sup - sup 1), high short-pulse damage threshold (50%-LIDT approx 60J/cm sup 2) and improved degradational stability. Main objective of this work is the development of ion assisted deposition processes without additional substrate heating for applications in precision and laser optics. New low-energy ion sources with ion energies below 100 eV were employed for the research work. Starting point of the process development are basic investigations on the ion assisted evaporation of fluoride and oxide thin film materials. The optimisation of the coating processes is primary done with the help of optical characterisation methods (spectral photometry, laser calorimetry, measur...

  12. Thermoelectric Properties of Nanograined Si-Ge-Au Thin Films Grown by Molecular Beam Deposition

    Science.gov (United States)

    Nishino, Shunsuke; Ekino, Satoshi; Inukai, Manabu; Omprakash, Muthusamy; Adachi, Masahiro; Kiyama, Makoto; Yamamoto, Yoshiyuki; Takeuchi, Tsunehiro

    2017-11-01

    Conditions to achieve extremely large Seebeck coefficient and extremely small thermal conductivity in Si-Ge-Au thin films formed of nanosized grains precipitated in amorphous matrix have been investigated. We employed molecular beam deposition to prepare Si1-x Ge x Au y thin films on sapphire substrate. The deposited films were annealed under nitrogen gas atmosphere at 300°C to 500°C for 15 min to 30 min. Nanocrystals dispersed in amorphous matrix were clearly observed by transmission electron microscopy. We did not observe anomalously large Seebeck coefficient, but very low thermal conductivity of nearly 1.0 W K-1 m-1 was found at around 0.2 thermal conductivity was well accounted for by the compositional dependence of the mixing entropy. Some of these values agree exactly with the amorphous limit predicted by theoretical calculations. The smallest lattice thermal conductivity found for the present samples is lower than that of nanostructured Si-Ge bulk material for which dimensionless figure of merit of ZT ≈ 1 was reported at high temperature.

  13. Three-Dimensional Nanostructure Fabrication by Focused Ion Beam Chemical Vapor Deposition

    Science.gov (United States)

    Matsui, Shinji

    In this chapter, we describe three-dimensional nanostructure fabrication using 30 keV Ga+ focused ion beam chemical vapor deposition (FIB-CVD) and a phenanthrene (C14H10) source as a precursor. We also consider microstructure plastic art, which is a new field that has been made possible by microbeam technology, and we present examples of such art, including a "micro wine glass" with an external diameter of 2.75 μm and a height of 12 μm. The film deposited during such processes is diamond-like amorphous carbon, which has a Young's modulus exceeding 600 GPa, appearing to make it highly desirable for various applications. The production of three-dimensional nanostructures is also discussed. The fabrication of microcoils, nanoelectrostatic actuators, and 0.1 μm nanowiring - all potential components of nanomechanical systems - is explained. The chapter ends by describing the realization of nanoinjectors and nanomanipulators, novel nanotools for manipulating and analyzing subcellular organelles.

  14. Chemical tuning of PtC nanostructures fabricated via focused electron beam induced deposition

    International Nuclear Information System (INIS)

    Plank, Harald; Gspan, Christian; Kothleitner, Gerald; Hofer, Ferdinand; Haber, Thomas

    2013-01-01

    The fundamental dependence between process parameters during focused electron beam induced deposition and the chemistry of functional PtC nanostructures have been studied via a multi-technique approach using SEM, (S)TEM, EELS, AFM, and EFM. The study reveals that the highest Pt contents can only be achieved by an ideal balance between potentially dissociating electrons and available precursor molecules on the surface. For precursor regimes apart from this situation, an unwanted increase of carbon is observed which originates from completely different mechanisms: (1) an excess of electrons leads to polymerization of precursor fragments whereas (2) a lack of electrons leads to incompletely dissociated precursor molecules incorporated into the nanostructures. While the former represents an unwanted class of carbon, the latter condition maximizes the volume growth rates and allows for post-growth curing strategies which can strongly increase the functionality. Furthermore, the study gives an explanation of why growing deposits can dynamically change their chemistry and provides a straightforward guide towards more controlled fabrication conditions. (paper)

  15. All-oxide broadband antireflection coatings by plasma ion assisted deposition: design, simulation, manufacturing and re-optimization.

    Science.gov (United States)

    Wilbrandt, Steffen; Stenzel, Olaf; Kaiser, Norbert

    2010-09-13

    A new all-oxide design for broadband antireflection coatings with significantly reduced impact of deposition errors to the final reflectance is presented. Computational manufacturing including re-optimization during deposition has been used in the design work to account for maximum insensibility of the design with respect to deposition errors typical for plasma ion assisted deposition PIAD. Repeated deposition runs with the deducted monitoring and re-optimization strategy verify the validity of the simulations and the stability of the derived design solution.

  16. 3D magnetic nanostructures grown by focused electron and ion beam induced deposition

    Science.gov (United States)

    Fernandez-Pacheco, Amalio

    Three-dimensional nanomagnetism is an emerging research area, where magnetic nanostructures extend along the whole space, presenting novel functionalities not limited to the substrate plane. The development of this field could have a revolutionary impact in fields such as electronics, the Internet of Things or bio-applications. In this contribution, I will show our recent work on 3D magnetic nanostructures grown by focused electron and ion beam induced deposition. This 3D nano-printing techniques, based on the local chemical vapor deposition of a gas via the interaction with electrons and ions, makes the fabrication of complex 3D magnetic nanostructures possible. First, I will show how by exploiting different growth regimes, suspended Cobalt nanowires with modulated diameter can be patterned, with potential as domain wall devices. Afterwards, I will show recent results where the synthesis of Iron-Gallium alloys can be exploited in the field of artificial multiferroics. Moreover, we are developing novel methodologies combining physical vapor deposition and 3D nano-printing, creating Permalloy 3D nanostrips with controllable widths and lengths up to a few microns. This approach has been extended to more complex geometries by exploiting advanced simulation growth techniques combining Monte Carlo and continuum model methods. Throughout the talk, I will show the methodology we are following to characterize 3D magnetic nanostructures, by combining magneto-optical Kerr effect, scanning probe microscopy and electron and X-R magnetic imaging, and I will highlight some of the challenges and opportunities when studying these structures. I acknowledge funding from EPSRC and the Winton Foundation.

  17. Development of plasma assisted thermal vapor deposition technique for high-quality thin film

    Science.gov (United States)

    Lee, Kang-Il; Choi, Yong Sup; Park, Hyun Jae

    2016-12-01

    The novel technique of Plasma-Assisted Vapor Deposition (PAVD) is developed as a new deposition method for thin metal films. The PAVD technique yields a high-quality thin film without any heating of the substrate because evaporated particles acquire energy from plasma that is confined to the inside of the evaporation source. Experiments of silver thin film deposition have been carried out in conditions of pressure lower than 10-3 Pa. Pure silver plasma generation is verified by the measurement of the Ag-I peak using optical emission spectroscopy. A four point probe and a UV-VIS spectrophotometer are used to measure the electrical and optical properties of the silver film that is deposited by PAVD. For an ultra-thin silver film with a thickness of 6.5 nm, we obtain the result of high-performance silver film properties, including a sheet resistance visible-range transmittance >75%. The PAVD-film properties show a low sheet resistance of 30% and the same transmittance with conventional thermal evaporation film. In the PAVD source, highly energetic particles and UV from plasma do not reach the substrate because the plasma is completely shielded by the optimized nozzle of the crucible. This new PAVD technique could be a realistic solution to improve the qualities of transparent electrodes for organic light emission device fabrication without causing damage to the organic layers.

  18. Effect of aluminum plasma parameters on the physical properties of Ti-Al-N thin films deposited by reactive crossed beam pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Escobar-Alarcón, L., E-mail: luis.escobar@inin.gob.mx [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México DF 11801 (Mexico); Solís-Casados, D.A. [Centro Conjunto de Investigación en Química Sustentable UAEM-UNAM, Carretera Toluca-Atlacomulco Km 14.5, Unidad San Cayetano, Toluca, Estado de México 50200 (Mexico); Romero, S. [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México DF 11801 (Mexico); Fernández, M. [Departamento de Aceleradores, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México DF 11801 (Mexico); Pérez-Álvarez, J. [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México DF 11801 (Mexico); Centro Conjunto de Investigación en Química Sustentable UAEM-UNAM, Carretera Toluca-Atlacomulco Km 14.5, Unidad San Cayetano, Toluca, Estado de México 50200 (Mexico); Haro-Poniatowski, E. [Departamento de Física, Universidad Autónoma Metropolitana Iztapalapa, Apdo. Postal 55-534, México DF (Mexico)

    2013-10-15

    This work reports on the preparation and characterization of Ti-Al-N thin films deposited by reactive crossed beam pulsed laser deposition (RCBPLD). The elemental composition, vibrational properties and hardness of the deposited films were investigated as a function of the plasma parameters, that is, the Al{sup +} mean kinetic energy and plasma density. The composition of the thin films was determined from X-ray photoelectron spectroscopy (XPS) measurements as well as by Rutherford backscattering spectroscopy (RBS). The structural modifications of the deposited materials due to Al incorporation were characterized by Raman spectroscopy. The hardness of the deposited films was determined by nanoindentation. It was found that by using this experimental configuration the aluminum content in the deposited films was incorporated in a controlled way, from 2.2 to 31.7 at.% (XPS measurements), by varying the Al{sup +} mean kinetic energy and the plasma density. Raman results suggest that at low aluminum concentrations a solid solution of Ti(Al, N) is produced, whereas at higher aluminum concentrations a nanocomposite formed of TiAlN and AlN is obtained. Ti-Al-N films with hardnesses up to 28.8 GPa, which are suitable for many mechanical applications, were obtained. These results show that the properties of the deposited material are controlled, at least partially, by the aluminum plasma parameters used for thin film growth.

  19. Metal oxide targets produced by the polymer-assisted deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, Mitch A., E-mail: mitch@berkeley.ed [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Ali, Mazhar N.; Chang, Noel N.; Parsons-Moss, T. [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Ashby, Paul D. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Gates, Jacklyn M. [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Stavsetra, Liv [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Gregorich, Kenneth E.; Nitsche, Heino [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2010-02-11

    The polymer-assisted deposition (PAD) method was used to create crack-free homogenous metal oxide films for use as targets in nuclear science applications. Metal oxide films of europium, thulium, and hafnium were prepared as models for actinide oxides. Films produced by a single application of PAD were homogenous and uniform and ranged in thickness from 30 to 320 nm. Reapplication of the PAD method (six times) with a 10% by weight hafnium(IV) solution resulted in an equally homogeneous and uniform film with a total thickness of 600 nm.

  20. Metal oxide targets produced by the polymer-assisted deposition method

    International Nuclear Information System (INIS)

    Garcia, Mitch A.; Ali, Mazhar N.; Chang, Noel N.; Parsons-Moss, T.; Ashby, Paul D.; Gates, Jacklyn M.; Stavsetra, Liv; Gregorich, Kenneth E.; Nitsche, Heino

    2010-01-01

    The polymer-assisted deposition (PAD) method was used to create crack-free homogenous metal oxide films for use as targets in nuclear science applications. Metal oxide films of europium, thulium, and hafnium were prepared as models for actinide oxides. Films produced by a single application of PAD were homogenous and uniform and ranged in thickness from 30 to 320 nm. Reapplication of the PAD method (six times) with a 10% by weight hafnium(IV) solution resulted in an equally homogeneous and uniform film with a total thickness of 600 nm.

  1. Thin-film deposition method assisted by mid-infrared-FEL

    CERN Document Server

    Yasumoto, M; Ishizu, A; Tsubouchi, N; Awazu, K; Umesaki, N

    2001-01-01

    We propose the novel application of the mid-infrared (MIR) FEL to the thin-film fabrication process. During the application, a substrate on which a thin film is being fabricated by a conventional method is simultaneously irradiated by the MIR FEL. The MIR FEL induces the fabricated molecules into the excited state of the stretching vibration energy, when the photon energy of the MIR FEL corresponds to one of the molecules. Therefore, the method can assist the thin-film fabrication quasi-independent of the substrate temperature. The method has the advantages of application on a temperature sensitive substrate and selective fabrication due to the tunable wavelength of the MIR FEL. In order to realize the method, we developed two thin film fabrication devices; an MIR FEL assisted RF sputtering device and an MIR FEL assisted laser ablation deposition device. For the method, the intensity of the assisted MIR FEL is an important problem. Thus the cross-section of the MIR FEL intensity profile is shown and the propa...

  2. High fluence deposition of polyethylene glycol films at 1064 nm by matrix assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Purice, Andreea; Schou, Jørgen; Kingshott, P.

    2007-01-01

    Matrix assisted pulsed laser evaporation (MAPLE) has been applied for deposition of thin polyethylene glycol (PEG) films with infrared laser light at 1064 nm. We have irradiated frozen targets (of 1 wt.% PEG dissolved in water) and measured the deposition rate in situ with a quartz crystal 2...... microbalance. The laser fluence needed to produce PEG films turned out to be unexpectedly high with a threshold of 9 J/cm(2) and the deposition rate was much lower than that with laser light at 355 nm. Results from matrix assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI...

  3. Organic/hybrid thin films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

    Science.gov (United States)

    Stiff-Roberts, Adrienne D.; Ge, Wangyao

    2017-12-01

    Some of the most exciting materials research in the 21st century attempts to resolve the challenge of simulating, synthesizing, and characterizing new materials with unique properties designed from first principles. Achievements in such development for organic and organic-inorganic hybrid materials make them important options for electronic and/or photonic devices because they can impart multi-functionality, flexibility, transparency, and sustainability to emerging systems, such as wearable electronics. Functional organic materials include small molecules, oligomers, and polymers, while hybrid materials include inorganic nanomaterials (such as zero-dimensional quantum dots, one-dimensional carbon nanotubes, or two-dimensional nanosheets) combined with organic matrices. A critically important step to implementing new electronic and photonic devices using such materials is the processing of thin films. While solution-based processing is the most common laboratory technique for organic and hybrid materials, vacuum-based deposition has been critical to the commercialization of organic light emitting diodes based on small molecules, for example. Therefore, it is desirable to explore vacuum-based deposition of organic and hybrid materials that include larger macromolecules, such as polymers. This review article motivates the need for physical vapor deposition of polymeric and hybrid thin films using matrix-assisted pulsed laser evaporation (MAPLE), which is a type of pulsed laser deposition. This review describes the development of variations in the MAPLE technique, discusses the current understanding of laser-target interactions and growth mechanisms for different MAPLE variations, surveys demonstrations of MAPLE-deposited organic and hybrid materials for electronic and photonic devices, and provides a future outlook for the technique.

  4. High-speed deposition of titanium carbide coatings by laser-assisted metal–organic CVD

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Yansheng [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tu, Rong, E-mail: turong@whut.edu.cn [State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Goto, Takashi [Institute for Materials Research, Tohoku University, Aoba-ku, 2-1-1 Katahira, Sendai 980-8577 (Japan)

    2013-08-01

    Graphical abstract: - Highlights: • A semiconductor laser was first used to prepare wide-area LCVD-TiC{sub x} coatings. • The effect of laser power for the deposition of TiC{sub x} coatings was discussed. • TiC{sub x} coatings showed a columnar cross section and a dense surface texture. • TiC{sub x} coatings had a 1–4 order lower laser density than those of previous reports. • This study gives the possibility of LCVD applying on the preparation of TiC{sub x} coating. - Abstract: A semiconductor laser-assisted chemical vapor deposition (LCVD) of titanium carbide (TiC{sub x}) coatings on Al{sub 2}O{sub 3} substrate using tetrakis (diethylamido) titanium (TDEAT) and C{sub 2}H{sub 2} as source materials were investigated. The influences of laser power (P{sub L}) and pre-heating temperature (T{sub pre}) on the microstructure and deposition rate of TiC{sub x} coatings were examined. Single phase of TiC{sub x} coatings were obtained at P{sub L} = 100–200 W. TiC{sub x} coatings had a cauliflower-like surface and columnar cross section. TiC{sub x} coatings in the present study had the highest R{sub dep} (54 μm/h) at a relative low T{sub dep} than those of conventional CVD-TiC{sub x} coatings. The highest volume deposition rate (V{sub dep}) of TiC{sub x} coatings was about 4.7 × 10{sup −12} m{sup 3} s{sup −1}, which had 3–10{sup 5} times larger deposition area and 1–4 order lower laser density than those of previous LCVD using CO{sub 2}, Nd:YAG and argon ion laser.

  5. Crack-free yttria stabilized zirconia thin films by aerosol assisted chemical vapor deposition: Influence of water and carrier gas

    Energy Technology Data Exchange (ETDEWEB)

    Schlupp, M.V.F., E-mail: Meike.Schlupp@mat.ethz.ch [Nonmetallic Inorganic Materials, ETH Zuerich, Wolfgang-Pauli-Str. 10, 8093 Zuerich (Switzerland); Binder, S.; Martynczuk, J.; Prestat, M. [Nonmetallic Inorganic Materials, ETH Zuerich, Wolfgang-Pauli-Str. 10, 8093 Zuerich (Switzerland); Gauckler, L.J. [Nonmetallic Inorganic Materials, ETH Zuerich, Wolfgang-Pauli-Str. 10, 8093 Zuerich (Switzerland); International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Moto-oka, Nishi-ku, Fukuoka 819-0395 (Japan)

    2012-11-01

    Yttria stabilized zirconia thin films are deposited on silicon single crystal substrates by aerosol assisted chemical vapor deposition from precursor solutions of zirconium and yttrium 2,4-pentanedionate in ethanol. Continuous films are obtained using pure oxygen, pure nitrogen, or mixtures of both as carrier gas. In the simultaneous presence of water and oxygen, crack formation is observed for films deposited at intermediate substrate temperatures (450 Degree-Sign C), while those deposited at low (300 Degree-Sign C) and high (600 Degree-Sign C) temperatures remain crack-free. Crack-free films can be deposited at 450 Degree-Sign C in a water-free setting, or in the presence of water using pure nitrogen as carrier gas. The addition of water to the precursor solutions also significantly reduces film growth rates. - Highlights: Black-Right-Pointing-Pointer Thin film deposition by aerosol assisted chemical vapor deposition (AA-CVD) Black-Right-Pointing-Pointer Yttria stabilized zirconia (YSZ) thin films deposited between 300 Degree-Sign C and 600 Degree-Sign C Black-Right-Pointing-Pointer Water decreases growth rates and leads to crack formation in AA-CVD of YSZ. Black-Right-Pointing-Pointer Crack-free YSZ thin films deposited using oxygen and/or nitrogen as carrier gas Black-Right-Pointing-Pointer YSZ thin films deposited by AA-CVD show low shrinkage on annealing at 1000 Degree-Sign C.

  6. Ion assisted deposition processes: in situ control; Ionengestuetzte Beschichtungsprozesse in situ kontrollieren

    Energy Technology Data Exchange (ETDEWEB)

    Ehlers, H.; Gross, T.; Lappschies, M.; Ristau, D. [Laser Zentrum Hannover e.V. (Germany). Abteilung Laserkomponeneten, Gruppe Prozessentwicklung

    2004-12-01

    Ion assisted deposition processes for optical precision components exhibit a high potential, in particular in the near and mid infrared spectral region. The presented results demonstrate the important criterion of a minimized water adsorption in the thin film structures by measurements of the optical losses in the wavelength range around 3 {mu}m as well as by the determination of the spectral stability of the optics. Furthermore, the employment of an in situ monitor, which allows wide-band transmission measurements directly at the product, provides an extensive database for the process analysis and development. Thus, additional information about the growth behavior, the vacuum-to-air-shift, and about layer inhomogeneities is available. The combination of the in situ monitor with the coating plant control results in an automated process system, which allows a precise determination of the layer thickness and represents a basis for the rapid prototyping of complex layer systems. In contrast to standard monitor strategies, test coatings and calibration factors are not necessary. With the presented combination of the stable ion assisted deposition process and the in situ monitor, the production of demanding NIR/MIR multilayer systems with high reproducibility could be automated. (orig.)

  7. Phase Equilibrium of TiO2 Nanocrystals in Flame-Assisted Chemical Vapor Deposition.

    Science.gov (United States)

    Liu, Changran; Camacho, Joaquin; Wang, Hai

    2018-01-19

    Nano-scale titanium oxide (TiO 2 ) is a material useful for a wide range of applications. In a previous study, we showed that TiO 2 nanoparticles of both rutile and anatase crystal phases could be synthesized over the size range of 5 to 20 nm in flame-assisted chemical vapor deposition. Rutile was unexpectedly dominant in oxygen-lean synthesis conditions, whereas anatase is the preferred phase in oxygen-rich gases. The observation is in contrast to the 14 nm rutile-anatase crossover size derived from the existing crystal-phase equilibrium model. In the present work, we made additional measurements over a wider range of synthesis conditions; the results confirm the earlier observations. We propose an improved model for the surface energy that considers the role of oxygen desorption at high temperatures. The model successfully explains the observations made in the current and previous work. The current results provide a useful path to designing flame-assisted chemical vapor deposition of TiO 2 nanocrystals with controllable crystal phases. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Inorganic nanocomposite films with polymer nanofillers made by the concurrent multi-beam multi-target pulsed laser deposition

    Science.gov (United States)

    Darwish, Abdalla M.; Sarkisov, Sergey S.; Mele, Paolo; Saini, Shrikant; Moore, Shaelynn; Bastian, Tyler; Dorlus, Wydglif; Zhang, Xiaodong; Koplitz, Brent

    2017-08-01

    We report on the new class of inorganic nanocomposite films with the inorganic phase hosting the polymer nanofillers made by the concurrent multi-beam multi-target pulsed laser deposition of the inorganic target material and matrix assisted pulsed laser evaporation of the polymer (MBMT-PLD/MAPLE). We used the exemplary nanocomposite thermoelectric films of aluminum-doped ZnO known as AZO with the nanofillers made of poly(methyl methacrylate) known as PMMA on various substrates such as SrTiO3, sapphire, fused silica, and polyimide. The AZO target was ablated with the second harmonic (532 nm) of the Nd:YAG Q-switched laser while PMMA was evaporated from its solution in chlorobenzene frozen in liquid nitrogen with the fundamental harmonic (1064 nm) of the same laser (50 Hz pulse repetition rate). The introduction of the polymer nanofillers increased the electrical conductivity of the nanocomposite films (possibly due to the carbonization of PMMA and the creation of additional channels of electric current) three times and reduced the thermal conductivity by 1.25 times as compared to the pure AZO films. Accordingly, the increase of the thermoelectric figure-of merit ZT would be 4 times. The best performance was observed for the sapphire substrates where the films were the most uniform. The results point to a huge potential of the optimization of a broad variety of optical, opto-electronic, and solar-power nanocomposite inorganic films by the controllable introduction of the polymer nanofillers using the MBMT-PLD/MAPLE method.

  9. Oscillatory barrier-assisted Langmuir–Blodgett deposition of large-scale quantum dot monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Shicheng, E-mail: johnxu@stanford.edu [Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States); Dadlani, Anup L. [Department of Chemistry, Stanford University, Stanford, CA 94305 (United States); Acharya, Shinjita; Schindler, Peter [Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States); Prinz, Fritz B. [Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States); Department of Material Science and Engineering, Stanford University, Stanford, CA 94305 (United States)

    2016-03-30

    Graphical abstract: - Highlights: • Large-scale monolayers of quantum dots with full coverage up to several millimeters have been achieved by incorporating oscillatory barriers in the commonly used Langmuir–Blodgett method. • By examining dilatational moduli as a function of average particle density, one can obtain an appropriate density and proper timing for depositing desired films. • Time evolution of dilatational moduli gives a clear indication of the film morphology and its stability. - Abstract: Depositing continuous, large-scale quantum dot films with low pinhole density is an inevitable but nontrivial step for studying their properties for applications in catalysis, electronic devices, and optoelectronics. This rising interest in high-quality quantum dot films has provided research impetus to improve the deposition technique. We show that by incorporating oscillatory barriers in the commonly used Langmuir–Blodgett method, large-scale monolayers of quantum dots with full coverage up to several millimeters have been achieved. With assistance of perturbation provided by the oscillatory barriers, the film has been shown to relax towards thermal equilibrium, and this physical process has been supported by molecular dynamics simulation. In addition, time evolution of dilatational moduli has been shown to give a clear indication of the film morphology and its stability.

  10. Nanocomposite Coatings Codeposited with Nanoparticles Using Aerosol-Assisted Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Xianghui Hou

    2013-01-01

    Full Text Available Incorporating nanoscale materials into suitable matrices is an effective route to produce nanocomposites with unique properties for practical applications. Due to the flexibility in precursor atomization and delivery, aerosol-assisted chemical vapour deposition (AACVD process is a promising way to synthesize desired nanocomposite coatings incorporating with preformed nanoscale materials. The presence of nanoscale materials in AACVD process would significantly influence deposition mechanism and thus affect microstructure and properties of the nanocomposites. In the present work, inorganic fullerene-like tungsten disulfide (IF-WS2 has been codeposited with Cr2O3 coatings using AACVD. In order to understand the codeposition process for the nanocomposite coatings, chemical reactions of the precursor and the deposition mechanism have been studied. The correlation between microstructure of the nanocomposite coatings and the codeposition mechanism in the AACVD process has been investigated. The heterogeneous reaction on the surface of IF-WS2 nanoparticles, before reaching the substrate surface, is the key feature of the codeposition in the AACVD process. The agglomeration of nanoparticles in the nanocomposite coatings is also discussed.

  11. Direct deposition of inorganic–organic hybrid semiconductors and their template-assisted microstructures

    International Nuclear Information System (INIS)

    Dwivedi, V.K.; Baumberg, J.J.; Prakash, G. Vijaya

    2013-01-01

    A straight-forward method is developed to deposit a new class of self-organized inorganic–organic (IO) hybrid, (C 12 H 25 NH 3 ) 2 PbI 4 . These IO hybrid structures are stacked-up as natural multiple quantum well structures and exhibit strong room-temperature exciton emission and other multifunctional features. Here it is successfully demonstrated that these materials can be directly carved into 2D photonic structures from the inexpensive template-assisted electrochemical deposition followed by solution processing. The applicability of this method for many such varieties of IO-hybrids is also explored. By appropriately controlling the deposition conditions and the self-assembly templates, target structures are developed for new-generation low-cost photonic devices. -- Highlights: ► New fabrication methodology for self-organized inorganic–organic hybrids. ► Strongly confined exciton emission and photoconductive properties. ► Simple bottom-up fabrication for device applications.

  12. Ion-beam texturing of uniaxially textured Ni films

    International Nuclear Information System (INIS)

    Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

    2005-01-01

    The formation of biaxial texture in uniaxially textured Ni thin films via Ar-ion irradiation is reported. The ion-beam irradiation was not simultaneous with deposition. Instead, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux, which differs from conventional ion-beam-assisted deposition. The uniaxial texture is established via a nonion beam process, with the in-plane texture imposed on the uniaxial film via ion beam bombardment. Within this sequential ion beam texturing method, grain alignment is driven by selective etching and grain overgrowth

  13. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States); Zheng, Jian-Guo [Irvine Materials Research Institute, University of California, Irvine, California 92697-2800 (United States)

    2016-07-25

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  14. Biased Target Ion Beam Deposition and Nanoskiving for Fabricating NiTi Alloy Nanowires

    Science.gov (United States)

    Hou, Huilong; Horn, Mark W.; Hamilton, Reginald F.

    2016-12-01

    Nanoskiving is a novel nanofabrication technique to produce shape memory alloy nanowires. Our previous work was the first to successfully fabricate NiTi alloy nanowires using the top-down approach, which leverages thin film technology and ultramicrotomy for ultra-thin sectioning. For this work, we utilized biased target ion beam deposition technology to fabricate nanoscale (i.e., sub-micrometer) NiTi alloy thin films. In contrast to our previous work, rapid thermal annealing was employed for heat treatment, and the B2 austenite to R-phase martensitic transformation was confirmed using stress-temperature and diffraction measurements. The ultramicrotome was programmable and facilitated sectioning the films to produce nanowires with thickness-to-width ratios ranging from 4:1 to 16:1. Energy dispersive X-ray spectroscopy analysis confirmed the elemental Ni and Ti make-up of the wires. The findings exposed the nanowires exhibited a natural ribbon-like curvature, which depended on the thickness-to-width ratio. The results demonstrate nanoskiving is a potential nanofabrication technique for producing NiTi alloy nanowires that are continuous with an unprecedented length on the order of hundreds of micrometers.

  15. Geometry modeling of single track cladding deposited by high power diode laser with rectangular beam spot

    Science.gov (United States)

    Liu, Huaming; Qin, Xunpeng; Huang, Song; Hu, Zeqi; Ni, Mao

    2018-01-01

    This paper presents an investigation on the relationship between the process parameters and geometrical characteristics of the sectional profile for the single track cladding (STC) deposited by High Power Diode Laser (HPDL) with rectangle beam spot (RBS). To obtain the geometry parameters, namely cladding width Wc and height Hc of the sectional profile, a full factorial design (FFD) of experiment was used to conduct the experiments with a total of 27. The pre-placed powder technique has been employed during laser cladding. The influence of the process parameters including laser power, powder thickness and scanning speed on the Wc and Hc was analyzed in detail. A nonlinear fitting model was used to fit the relationship between the process parameters and geometry parameters. And a circular arc was adopted to describe the geometry profile of the cross-section of STC. The above models were confirmed by all the experiments. The results indicated that the geometrical characteristics of the sectional profile of STC can be described as the circular arc, and the other geometry parameters of the sectional profile can be calculated only using Wc and Hc. Meanwhile, the Wc and Hc can be predicted through the process parameters.

  16. Improved Understanding of Implosion Symmetry through New Experimental Techniques Connecting Hohlraum Dynamics with Laser Beam Deposition

    Science.gov (United States)

    Ralph, Joseph; Salmonson, Jay; Dewald, Eduard; Bachmann, Benjamin; Edwards, John; Graziani, Frank; Hurricane, Omar; Landen, Otto; Ma, Tammy; Masse, Laurent; MacLaren, Stephen; Meezan, Nathan; Moody, John; Parrilla, Nicholas; Pino, Jesse; Sacks, Ryan; Tipton, Robert

    2017-10-01

    Understanding what affects implosion symmetry has been a challenge for scientists designing indirect drive inertial confinement fusion experiments on the National Ignition Facility (NIF). New experimental techniques and data analysis have been employed aimed at improving our understanding of the relationship between hohlraum dynamics and implosion symmetry. Thin wall imaging data allows for time-resolved imaging of 10 keV Au l-band x-rays providing for the first time on the NIF, a spatially resolved measurement of laser deposition with time. In the work described here, we combine measurements from the thin wall imaging with time resolved views of the interior of the hohlraum. The measurements presented are compared to hydrodynamic simulations as well as simplified physics models. The goal of this work is to form a physical picture that better explains the relationship of the hohlraum dynamics and capsule ablator on laser beam propagation and implosion symmetry. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under contract DE-AC52-07NA27344.

  17. Visible light active TiO 2 films prepared by electron beam deposition of noble metals

    Science.gov (United States)

    Hou, Xing-Gang; Ma, Jun; Liu, An-Dong; Li, De-Jun; Huang, Mei-Dong; Deng, Xiang-Yun

    2010-03-01

    TiO 2 films prepared by sol-gel method were modified by electron beam deposition of noble metals (Pt, Pd, and Ag). Effects of noble metals on the chemical and surface characteristics of the films were studied using XPS, TEM and UV-Vis spectroscopy techniques. Photocatalytic activity of modified TiO 2 films was evaluated by studying the degradation of methyl orange dye solution under visible light UV irradiation. The result of TEM reveals that most of the surface area of TiO 2 is covered by tiny particles of noble metals with diameter less than 1 nm. Broad red shift of UV-Visible absorption band of modified photocatalysts was observed. The catalytic degradation of methyl orange in aqueous solutions under visible light illumination demonstrates a significant enhancement of photocatalytic activity of these films compared with the un-loaded films. The photocatalytic efficiency of modified TiO 2 films by this method is affected by the concentration of impregnating solution.

  18. Annealing induced oxidation and transformation of Zr thin film prepared by ion beam sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yeh, S.-W. [Institute of Materials Science and Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan (China); Hsieh, T.-Y. [Institute of Materials Science and Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan (China); Huang, H.-L. [Department of Mechanical Engineering, Chinese Military Academy, Kaohsiung, Taiwan (China); Gan Dershin [Institute of Materials Science and Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan (China)], E-Mail: dgan@mail.nsysu.edu.tw; Shen Pouyan [Institute of Materials Science and Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan (China)

    2007-04-15

    Nanocrystalline {alpha}-Zr condensates deposited by ion beam sputtering on the NaCl (1 0 0) surfaces and then annealed at 100-750 deg. C in air. The phases present were identified by transmission electron microscopy to be nanometer-size {alpha}-Zr + ZrO, {alpha}-Zr + ZrO + c-ZrO{sub 2}, c-ZrO{sub 2}, c- + t-ZrO{sub 2}, t-ZrO{sub 2}, and t- + m-ZrO{sub 2} phase assemblages with increasing annealing temperature. The ZrO{sub 2} showed strong {l_brace}1 0 0{r_brace} preferred orientation due to parallel epitaxy with NaCl (1 0 0) when annealed between 150 and 500 deg. C in air. The c- and t-ZrO{sub 2} condensates also showed (1 1 1)-specific coalescence among themselves. The c- and/or t-ZrO{sub 2} formation can be accounted for by the small grain size, the presence of low-valence Zr cation and the lateral constraint of the neighboring grains.

  19. Suspended tungsten-based nanowires with enhanced mechanical properties grown by focused ion beam induced deposition

    Science.gov (United States)

    Córdoba, Rosa; Lorenzoni, Matteo; Pablo-Navarro, Javier; Magén, César; Pérez-Murano, Francesc; María De Teresa, José

    2017-11-01

    The implementation of three-dimensional (3D) nano-objects as building blocks for the next generation of electro-mechanical, memory and sensing nano-devices is at the forefront of technology. The direct writing of functional 3D nanostructures is made feasible by using a method based on focused ion beam induced deposition (FIBID). We use this technique to grow horizontally suspended tungsten nanowires and then study their nano-mechanical properties by three-point bending method with atomic force microscopy. These measurements reveal that these nanowires exhibit a yield strength up to 12 times higher than that of the bulk tungsten, and near the theoretical value of 0.1 times the Young’s modulus (E). We find a size dependence of E that is adequately described by a core-shell model, which has been confirmed by transmission electron microscopy and compositional analysis at the nanoscale. Additionally, we show that experimental resonance frequencies of suspended nanowires (in the MHz range) are in good agreement with theoretical values. These extraordinary mechanical properties are key to designing electro-mechanically robust nanodevices based on FIBID tungsten nanowires.

  20. Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

    2015-01-01

    Here, we report on the electrical characterization of phase change memory cells containing a Ge 3 Sb 2 Te 6 (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles

  1. Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

    International Nuclear Information System (INIS)

    Zaleta-Alejandre, E.; Balderas-Xicoténcatl, R.; Arrieta, M.L. Pérez; Meza-Rocha, A.N.; Rivera-Álvarez, Z.; Falcony, C.

    2013-01-01

    Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min −1 at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min −1 were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s

  2. Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

    Energy Technology Data Exchange (ETDEWEB)

    Zaleta-Alejandre, E.; Balderas-Xicoténcatl, R. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Arrieta, M.L. Pérez [Universidad Autónoma de Zacatecas, Unidad Académica de Física, Calzada Solidaridad esq. Paseo, La Bufa s/n, C.P. 98060, Zacatecas, México (Mexico); Meza-Rocha, A.N.; Rivera-Álvarez, Z. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Falcony, C., E-mail: cfalcony@fis.cinvestav.mx [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico)

    2013-10-01

    Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min{sup −1} at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min{sup −1} were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s.

  3. Comparison of the Al back contact deposited by sputtering, e-beam, or thermal evaporation for inverted perovskite solar cells

    Science.gov (United States)

    Wahl, Tina; Hanisch, Jonas; Ahlswede, Erik

    2018-04-01

    In this work, we present inverted perovskite solar cells with Al top electrodes, which were deposited by three different methods. Besides the widely used thermal evaporation of Al, we also used the industrially important high deposition rate processes sputtering and electron beam evaporation for aluminium electrodes and examined the influence of the deposition method on the solar cell performance. The current-voltage characteristics of as grown solar cells with sputtered and e-beam Al electrode show an s-shape due to damage done to the organic electronic transport layers (ETL) during Al deposition. It can be cured by a short annealing step at a moderate temperature so that fill factors  >60% and power conversion efficiencies of almost 12% with negligible hysteresis can be achieved. While solar cells with thermally evaporated Al electrode do not show an s-shape, they also exhibit a clear improvement after a short annealing step. In addition, we varied the thickness of the ETL consisting of a double layer ([6,6]-Phenyl-C61-butyric acid methyl ester and bathocuproine) and investigated the influence on the solar cell parameters for the three different Al deposition methods, which showed distinct dependencies on ETL thickness.

  4. The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals

    International Nuclear Information System (INIS)

    Remnev, G.E.; Zakoutaev, A.N.; Grushin, I.I.; Matvenko, V.M.; Potemkin, A.V.; Ryzhkov, V.A.; Chernikov, E.V.

    1996-01-01

    A high-intensity pulsed ion beam with parameters: ion energy 350-500 keV, ion current density at a target > 200 A/cm 2 , pulse duration 60 ns, was used for metal deposition. The film deposition rate was 0.6-4.0 mm/s. Transmission electron microscopy/transmission electron diffraction investigations of the copper target-film system were performed. The impurity content in the film was determined by x-ray fluorescence analysis and secondary ion mass spectrometry. The angular distributions of the ablated plasma were measured. (author). 2 figs., 7 refs

  5. Towards an electro-magnetic field separation of deposited material implemented in an ion beam sputter process

    International Nuclear Information System (INIS)

    Malobabic, Sina; Jupé, Marco; Ristau, Detlev

    2013-01-01

    Nowadays, Ion Beam Sputter (IBS) processes are very well optimized on an empirical basis. To achieve further progresses, a modification of the IBS process by guiding the coating material using an axial magnetic field and an additional electrical field has been studied. The electro-magnetic (EM) field leads to a significant change in plasma properties and deposition rate distributions, whereas an increase in deposition rate along the centerline of the axial EM field around 150% was observed. These fundamental studies on the prototype are the basis for the development of an applicable and workable design of a separation device.

  6. Effect of deposition distance on thickness and microstructure of silicon thin film produced by electron beam evaporation; Efeito da distancia de deposicao na espessura e microestrutura de filme fino obtido por evaporacao por feixe de eletrons

    Energy Technology Data Exchange (ETDEWEB)

    Toledo, T.F.; Ramanery, F.P.; Branco, J.R.T. [Fundacao Centro Tecnologico de Minas Gerais, Belo Horizonte, MG (Brazil)], e-mail: thalitaqui@yahoo.com.br; Cunha, M.A. [Acos Especiais Itabira S.A. (Acesita), Belo Horizonte, MG (Brazil)

    2006-07-01

    The interest for materials with new characteristics and properties made thin films an area of highest research interest. Silicon thin films have been widely used in solar cells, being the main active layer. In this work, the effect of deposition distance on thickness and microstructure of silicon films was investigated. The electron beam evaporation technique with argon plasma assistance was used to obtain films on stainless steel 304, Fe-Si alloy and soda lime glass. The experiments were made varying electron beam current and deposition pressure. The results are discussed based on Hertz-Knudsen's law and thin films microstructure evolution models. The samples were characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction and profilometer. (author)

  7. Microstructural Comparisons of Ultra-Thin Cu Films Deposited by Ion-Beam and dc-Magnetron Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Prater, W.

    2004-11-04

    We report and contrast both the electrical resistance and the microstructure of copper thin films deposited in an oxygen containing atmosphere by ion-beam and dc-magnetron sputtering. For films with thicknesses 5 nm or less, the resistivity of the Cu films is minimized at oxygen concentrations ranging from 0.2% to 1% for dc-magnetron sputtering and 6% to 10% for ion beam sputtering. Films sputtered under both conditions show a similar decrease of interface roughness with increasing oxygen concentration, although the magnetron deposited films are smoother. The dc-magnetron produced films have higher resistivity, have smaller Cu grains, and contain a higher concentration of cuprous oxide particles. We discuss the mechanisms leading to the grain refinement and the consequent reduced resistivity in both types of films.

  8. Fabrication of CdS films with superhydrophobicity by the microwave assisted chemical bath deposition.

    Science.gov (United States)

    Liu, Y; Tan, T; Wang, B; Zhai, R; Song, X; Li, E; Wang, H; Yan, H

    2008-04-15

    A simple method of microwave assisted chemical bath deposition (MA-CBD) was adopted to fabricate cadmium sulfide (CdS) thin films. The superhydrophobic surface with a water contact angle (CA) of 151 degrees was obtained. Via a scanning electron microscopy (SEM) observation, the film was proved having a porous micro/nano-binary structure which can change the property of the surface and highly enhance the hydrophobicity of the film. A possible mechanism was suggested to describe the growth of the porous structure, in which the microwave heating takes an important role in the formation of two distinct characteristic dimensions of CdS precipitates, the growth of CdS sheets in micro-scale and sphere particles in nano-scale. The superhydrophobic films may provide novel platforms for photovoltaic, sensor, microfluidic and other device applications.

  9. Quarterly Report: Microchannel-Assisted Nanomaterial Deposition Technology for Photovoltaic Material Production

    Energy Technology Data Exchange (ETDEWEB)

    Palo, Daniel R.

    2011-04-26

    Quarterly report to ITP for Nanomanufacturing program. Report covers FY11 Q2. The primary objective of this project is to develop a nanomanufacturing process which will reduce the manufacturing energy, environmental discharge, and production cost associated with current nano-scale thin-film photovoltaic (PV) manufacturing approaches. The secondary objective is to use a derivative of this nanomanufacturing process to enable greener, more efficient manufacturing of higher efficiency quantum dot-based photovoltaic cells now under development. The work is to develop and demonstrate a scalable (pilot) microreactor-assisted nanomaterial processing platform for the production, purification, functionalization, and solution deposition of nanomaterials for photovoltaic applications. The high level task duration is shown. Phase I consists of a pilot platform for Gen II PV films along with parallel efforts aimed at Gen III PV quantum dot materials. Status of each task is described.

  10. Superhydrophobic polymer films via aerosol assisted deposition - Taking a leaf out of nature's book

    Energy Technology Data Exchange (ETDEWEB)

    Crick, Colin R. [Materials Chemistry Research Centre, Department of Chemistry, University College London, 20 Gordon Street, London WC1H OAJ (United Kingdom); Parkin, Ivan P., E-mail: i.p.parkin@ucl.ac.u [Materials Chemistry Research Centre, Department of Chemistry, University College London, 20 Gordon Street, London WC1H OAJ (United Kingdom)

    2010-05-31

    Aerosol assisted deposition of three sets of polymer films based on commercially available resins was achieved on various substrates. The films were characterised using a range of methods, including water contact and slip angle to determine water repellent properties. The aerosol assisted deposition inside the chemical vapour deposition reactor was unique in generating a highly rough superhydrophobic surface with water contact angles up to 170{sup o}. During the deposition process, two of the polymers were cured resulting in the development of high surface morphology. It was observed that the polymer that did not cure did not develop such a rough surface resulting in a lower water contact angle ({approx} 99{sup o}). The superhydrophobic films had a Cassie-Baxter type wetting with water failing to penetrate the surface porosity, water spraying on the surface would bounce off. These films had exceptionally low slide angles of ca 1-2{sup o} from the horizontal.

  11. Exploring the potential of laser assisted flow deposition grown ZnO for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, J., E-mail: joana.catarina@ua.pt [Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Cerqueira, A.F.R.; Sousa, M.G.; Santos, N.F. [Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Pimentel, A.; Fortunato, E. [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Cunha, A.F. da; Monteiro, T.; Costa, F.M. [Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal)

    2016-07-01

    Zinc oxide (ZnO) is a widely studied wide band gap semiconductor with applications in several fields, namely to enhance solar cells efficiency. Its ability to be grown in a wide variety of nanostructured morphologies, allowing the designing of the surface area architecture constitutes an important advantage over other semiconductors. Laser assisted flow deposition (LAFD) is a recently developed growth method, based on a vapour-solid mechanism, which proved to be a powerful approach in the production of ZnO micro/nanostructures with different morphologies as well as high crystallinity and optical quality. In the present work we report the use of the LAFD technique to grow functional ZnO nanostructures (nanoparticles and tetrapods) working as nano templates to improve the dye-sensitized solar cells (DSSCs) efficiency. The structural and morphological characterization of the as-grown ZnO crystals were performed by X-ray diffraction and electron microscopy, respectively, and the optical quality was assessed by photoluminescence spectroscopy. DSSCs were produced using a combination of these nanostructures, which were subsequently sensitized with N719 dye. An efficiency of ∼3% was achieved under simulated AM 1.5 illumination conditions for a dye loading time of 1 h. - Highlights: • Laser assisted flow deposition proved to be an efficient technique to produce high quality ZnO. • Active layer formed by an interconnected network of tetrapods and a small amount of nanoparticles. • Efficiency of ∼3% obtained under simulated AM 1.5 illumination conditions.

  12. Effects of space exposure on ion-beam-deposited silicon-carbide and boron-carbide coatings.

    Science.gov (United States)

    Keski-Kuha, R A; Blumenstock, G M; Fleetwood, C M; Schmitt, D R

    1998-12-01

    Two recently developed optical coatings, ion-beam-deposited silicon carbide and ion-beam-deposited boron carbide, are very attractive as coatings on optical components for instruments for space astronomy and earth sciences operating in the extreme-UV spectral region because of their high reflectivity, significantly higher than any conventional coating below 105 nm. To take full advantage of these coatings in space applications, it is important to establish their ability to withstand exposure to the residual atomic oxygen and other environmental effects at low-earth-orbit altitudes. The first two flights of the Surface Effects Sample Monitor experiments flown on the ORFEUS-SPAS and the CRISTA-SPAS Shuttle missions provided the opportunity to study the effects of space exposure on these materials. The results indicate a need to protect ion-beam-deposited silicon-carbide-coated optical components from environmental effects in a low-earth orbit. The boron-carbide thin-film coating is a more robust coating able to withstand short-term exposure to atomic oxygen in a low-earth-orbit environment.

  13. Preparation of Al O N Films by Electron Cyclotron Resonance Plasma-Assisted Chemical Vapor Deposition

    Science.gov (United States)

    Goto, Takashi; Zhang, Wei; Hirai, Toshio

    1999-06-01

    Al O N films were prepared by electron cyclotron resonance plasma-assisted chemical vapor deposition (ECR PACVD) using an AlBr3 N2O N2 Ar H2 gas system. The structure, composition, deposition rate and optical properties were investigated. The compositions were controlled by changing the N2O/(N2O+N2) flow rate ratio (R). The refractive index was varied from 1.60 to 2.10, and the cutoff photon energy at 10% transmittance (Eg/10) from 5.1 to 7.0 eV as the R changed from 0 to 1.0. The Al O N films were composed mainly of a mixture of Al2O3 and AlN. An aluminum oxynitride phase was also identified at R=0.2 to 0.53. The Al O N films contained a (001)-oriented hexagonal AlN phase at R=0.025, and the films were amorphous at R>0.05.

  14. Plasma-assisted deposition of microcapsule containing Aloe vera extract for cosmeto-textiles

    Science.gov (United States)

    Nascimento do Carmo, S.; Zille, A.; Souto, A. P.

    2017-10-01

    Dielectric Barrier Discharge (DBD) atmospheric-pressure plasma was employed to enhance the deposition of commercial microcapsules (MCs) containing Aloe vera extract onto a cotton/polyester (50:50) fabric. DBD conditions were optimized in term of energy dosage and contact angle. The MCs were applied by padding and printing methods and the coatings were characterized in terms of SEM and FTIR. MCs display a spherical shape with size between 2 and 8 μm with an average wall thickness of 0.5 μm. The MCs applied by printing and pretreated with a plasma dosage of 1.6 kW m2 min-1 showed the best results with an increased adhesion of 200% and significant penetration of MCs into the fibres network. Plasma printed fabric retained 230% more MCs than untreated fabric after 10 washing cycles. However, the coating resistance between unwashed and washed samples was only improved by 5%. Considering the fact that no binder or crosslinking agents were used, the DBD plasma-assisted deposition of MCs revealed to be a promising environmental safe and low cost coating technology.

  15. Ion beam assisted synthesis of nano-crystals in glasses (silver and lead chalcogenides)

    International Nuclear Information System (INIS)

    Espiau de Lamaestre, R.

    2005-04-01

    This work deals with the interest in ion beams for controlling nano-crystals synthesis in glasses. We show two different ways to reach this aim, insisting on importance of redox phenomena induced by the penetration and implantation of ions in glasses. We first show that we can use the great energy density deposited by the ions to tailor reducing conditions, favorable to metallic nano-crystal precipitation. In particular, we show that microscopic mechanism of radiation induced silver precipitation in glasses are analogous to the ones of classical photography. Ion beams can also be used to overcome supersaturation of elements in a given matrix. In this work, we synthesized lead chalcogenide nano-crystals (PbS, PbSe, PbTe) whose optical properties are interesting for telecommunication applications. We demonstrate the influence of complex chalcogenide chemistry in oxide glasses, and its relationship with the observed loss of growth control when nano-crystals are synthesized by sequential implantation of Pb and S in pure silica. As a consequence of this understanding, we demonstrate a novel and controlled synthesis of PbS nano-crystals, consisting in implanting sulfur into a Pb-containing glass, before annealing. Choice of glass composition provides a better control of precipitation physico-chemistry, whereas the use of implantation allows high nano-crystal volume fractions to be reached. Our study of IR emission properties of these nano-crystals shows a very high excitation cross section, and evidence for a 'dark exciton' emitting level. (author)

  16. Surface reaction mechanisms during ozone and oxygen plasma assisted atomic layer deposition of aluminum oxide.

    Science.gov (United States)

    Rai, Vikrant R; Vandalon, Vincent; Agarwal, Sumit

    2010-09-07

    We have elucidated the reaction mechanism and the role of the reactive intermediates in the atomic layer deposition (ALD) of aluminum oxide from trimethyl aluminum in conjunction with O(3) and an O(2) plasma. In situ attenuated total reflection Fourier transform infrared spectroscopy data show that both -OH groups and carbonates are formed on the surface during the oxidation cycle. These carbonates, once formed on the surface, are stable to prolonged O(3) exposure in the same cycle. However, in the case of plasma-assisted ALD, the carbonates decompose upon prolonged O(2) plasma exposure via a series reaction kinetics of the type, A (CH(3)) --> B (carbonates) --> C (Al(2)O(3)). The ratio of -OH groups to carbonates on the surface strongly depends on the oxidizing agent, and also the duration of the oxidation cycle in plasma-assisted ALD. However, in both O(3) and O(2) plasma cycles, carbonates are a small fraction of the total number of reactive sites compared to the hydroxyl groups.

  17. Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Lorenzo Rigutti

    2009-01-01

    Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

  18. Investigation of chemical vapour deposition diamond detectors by X- ray micro-beam induced current and X-ray micro-beam induced luminescence techniques

    CERN Document Server

    Olivero, P; Vittone, E; Fizzotti, F; Paolini, C; Lo Giudice, A; Barrett, R; Tucoulou, R

    2004-01-01

    Tracking detectors have become an important ingredient in high-energy physics experiments. In order to survive the harsh detection environment of the Large Hadron Collider (LHC), trackers need to have special properties. They must be radiation hard, provide fast collection of charge, be as thin as possible and remove heat from readout electronics. The unique properties of diamond allow it to fulfill these requirements. In this work we present an investigation of the charge transport and luminescence properties of "detector grade" artificial chemical vapour deposition (CVD) diamond devices developed within the CERN RD42 collaboration, performed by means of X-ray micro-beam induced current collection (XBICC) and X-ray micro- beam induced luminescence (XBIL) techniques. XBICC technique allows quantitative estimates of the transport parameters of the material to be evaluated and mapped with micrometric spatial resolution. In particular, the high resolution and sensitivity of the technique has allowed a quantitati...

  19. Plasma-assisted molecular beam epitaxy of (11-22)-oriented 3-nitrides

    International Nuclear Information System (INIS)

    Lahourcade, L.

    2009-10-01

    This work reports on the molecular-beam epitaxial growth of (1122)-oriented semi-polar nitride semiconductors using m-sapphire substrates. The (1122) crystallographic orientation is predefined by AlN deposition on m-sapphire under N excess. On top of this AlN buffer layer, undoped or Si-doped two-dimensional GaN(1122) films are formed under Ga-rich conditions, with a stabilized Ga-excess ad-layer of about 1.05±0.10 ML. In contrast, Mg tends to segregate on the GaN surface, inhibiting the self-regulated Ga excess film. Nevertheless, uniform Mg incorporation can be obtained, and p-type conductivity was achieved. GaN/AlN quantum wells are synthesized by deposition of the binary compounds under the above-described conditions. In the case of GaN/AlN quantum dots, the three-dimensional transition is induced by a growth interruption under vacuum. The reduction of the internal electric field in GaN/AlN nano-structures is confirmed by the blue shift of the photoluminescence spectrum and by the short photoluminescence decay times measured at low temperature. These results are consistent with theoretical calculations of the electronic structure. (author)

  20. Direct Fabrication of Carbon Nanotubes STM Tips by Liquid Catalyst-Assisted Microwave Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Fa-Kuei Tung

    2009-01-01

    Full Text Available Direct and facile method to make carbon nanotube (CNT tips for scanning tunneling microscopy (STM is presented. Cobalt (Co particles, as catalysts, are electrochemically deposited on the apex of tungsten (W STM tip for CNT growth. It is found that the quantity of Co particles is well controlled by applied DC voltage, concentration of catalyst solution, and deposition time. Using optimum growth condition, CNTs are successfully synthesized on the tip apex by catalyst-assisted microwave-enhanced chemical vapor deposition (CA-MPECVD. A HOPG surface is clearly observed at an atomic scale using the present CNT-STM tip.

  1. Deposition

    International Nuclear Information System (INIS)

    1984-01-01

    Monitoring of radionuclide contents in rainwater is a useful way to keep a check on any change in the external radiation dose caused by the deposited material. Thus analuses of 3 H, 89 Sr and 90 Sr as well as 137 Cs and other gamma radionuclide contents in deposition were continued both nationwide and in the vicinities of the nuclear power stations at Loviisa and Olkiluoto. The deposition of 90 Sr and 137 Cs was lower than in previous years, being only a small fraction of the highest deposition values measured in 1983. The tritium concentrations were also lower than in 1982. The total annual deposition of tritium at different sampling stations varied from 1.7 kBq/m 2 to 2.9 kBq/m 2

  2. Influence of travel speed on spray deposition uniformity from an air-assisted variable-rate sprayer

    Science.gov (United States)

    A newly developed LiDAR-guided air-assisted variable-rate sprayer for nursery and orchard applications was tested at various travel speeds to compare its spray deposition and coverage uniformity with constant-rate applications. Spray samplers, including nylon screens and water-sensitive papers (WSP)...

  3. Organic-inorganic nano-composite films for photonic applications made by multi-beam multi-target pulsed laser deposition with remote control of the plume directions

    Science.gov (United States)

    Darwish, Abdalla M.; Moore, Shaelynn; Mohammed, Aziz; Alexander, Deonte'; Bastian, Tyler; Dorlus, Wydglif; Sarkisov, Sergey S.; Patel, Darayas N.; Mele, Paolo; Koplitz, Brent

    2016-09-01

    There has been an explosive interest in the technique of laser assisted deposition of polymer nano-composite films exploiting the matrix assisted pulsed laser evaporation (MAPLE) with regard to the polymer host as can be judged form recent publications.1-4 In MAPLE, a frozen solution of a polymer in a relatively volatile solvent is used as a laser target. The solvent and concentration are selected so that first, the polymer of interest can dissolve to form a dilute, particulate free solution, second, the majority of the laser energy is initially absorbed by the solvent molecules and not by the solute molecules, and third, there is no photochemical reaction between the solvent and the solute. The light-material interaction in MAPLE can be described as a photothermal process. The photon energy absorbed by the solvent is converted to thermal energy that causes the polymer to be heated but the solvent to vaporize. As the surface solvent molecules are evaporated into the gas phase, polymer molecules are exposed at the gas-target matrix interface. The polymer molecules attain sufficient kinetic energy through collective collisions with the evaporating solvent molecules, to be transferred into the gas phase. By careful optimization of the MAPLE deposition conditions (laser wavelength, repetition rate, solvent type, concentration, temperature, and background gas and gas pressure), this process can occur without any significant polymer decomposition. The MAPLE process proceeds layer-by-layer, depleting the target of solvent and polymer in the same concentration as the starting matrix. When a substrate is positioned directly in the path of the plume, a coating starts to form from the evaporated polymer molecules, while the volatile solvent molecules are evacuated by the pump from the deposition chamber. In case of fabrication of polymer nanocomposites, MAPLE targets are usually prepared as nano-colloids of the additives of interest in the initial polymer solutions. Mixing

  4. Friction and wear performance of ion-beam deposited diamondlike carbon films on steel substrates

    Energy Technology Data Exchange (ETDEWEB)

    Erdemir, A.; Nichols, F.A.; Pan, X.Z. [Argonne National Lab., IL (United States). Materials and Components Technology Div.; Wei, R.; Wilbur, P. [Colorado State Univ., Fort Collins, CO (United States). Dept. of Mechanical Engineering

    1993-01-01

    In this study, we investigated the friction and wear performance of ion-beam-deposited diamondlike-carbon (DLC) films (1.5 {mu}m thick) on AISI 440C steel substrates. Furthermore, we ran a series of long-duration wear tests under 5, 10, and 20 N load to assess the load-bearing capacity and durability limits of these films under each load. Tests were performed on a ball-on-disk machine in open air at room temperature {approx} 22{plus_minus}1{degrees}C, and humidity, {approx} 30{plus_minus}5%. For the test conditions explored, we found that (1) the steady-state friction coefficients of pairs without a DLC film were in the range of 0.7 to 0.9 and the average wear rates of 440C balls (9.55 mm diameter) sliding against uncoated 440C disks were on the order of 10{sup {minus}5} mm{sup 3}/N.m, depending on contact load; (2) DLC films reduced the steady-state friction coefficients of test pairs by factors of 6 to 8, and the wear rates of pins by factors of 500 to 2000; (3) The wear of disks coated with a DLC film was virtually unmeasurable while the wear of uncoated disks was quite substantial, (4) these DLC films were able to endure the range of loads, 5 to 20 N, without any delamination and to last over a million cycles before wearing out. During long-duration wear tests, the friction coefficients were initially on the order of 0.15, but decreased to some low values of 0.05 to 0.07 after sliding for 15 to 25 km, depending on the load, and remained low until wearing out. This low-friction regime was correlated with the formation of a carbon-rich transfer film on the wear scar of 440C balls. Micro-laser-Raman spectroscopy and scanning-electron microscopy were used to examine the structure and chemistry of worn surfaces and to elucidate the wear- and friction-reducing mechanisms of the DLC film.

  5. Friction and wear performance of ion-beam deposited diamondlike carbon films on steel substrates

    Energy Technology Data Exchange (ETDEWEB)

    Erdemir, A.; Nichols, F.A.; Pan, X.Z. (Argonne National Lab., IL (United States). Materials and Components Technology Div.); Wei, R.; Wilbur, P. (Colorado State Univ., Fort Collins, CO (United States). Dept. of Mechanical Engineering)

    1993-01-01

    In this study, we investigated the friction and wear performance of ion-beam-deposited diamondlike-carbon (DLC) films (1.5 [mu]m thick) on AISI 440C steel substrates. Furthermore, we ran a series of long-duration wear tests under 5, 10, and 20 N load to assess the load-bearing capacity and durability limits of these films under each load. Tests were performed on a ball-on-disk machine in open air at room temperature [approx] 22[plus minus]1[degrees]C, and humidity, [approx] 30[plus minus]5%. For the test conditions explored, we found that (1) the steady-state friction coefficients of pairs without a DLC film were in the range of 0.7 to 0.9 and the average wear rates of 440C balls (9.55 mm diameter) sliding against uncoated 440C disks were on the order of 10[sup [minus]5] mm[sup 3]/N.m, depending on contact load; (2) DLC films reduced the steady-state friction coefficients of test pairs by factors of 6 to 8, and the wear rates of pins by factors of 500 to 2000; (3) The wear of disks coated with a DLC film was virtually unmeasurable while the wear of uncoated disks was quite substantial, (4) these DLC films were able to endure the range of loads, 5 to 20 N, without any delamination and to last over a million cycles before wearing out. During long-duration wear tests, the friction coefficients were initially on the order of 0.15, but decreased to some low values of 0.05 to 0.07 after sliding for 15 to 25 km, depending on the load, and remained low until wearing out. This low-friction regime was correlated with the formation of a carbon-rich transfer film on the wear scar of 440C balls. Micro-laser-Raman spectroscopy and scanning-electron microscopy were used to examine the structure and chemistry of worn surfaces and to elucidate the wear- and friction-reducing mechanisms of the DLC film.

  6. High fluence deposition of polyethylene glycol films at 1064 nm by matrix assisted pulsed laser evaporation (MAPLE)

    International Nuclear Information System (INIS)

    Purice, A.; Schou, J.; Kingshott, P.; Pryds, N.; Dinescu, M.

    2007-01-01

    Matrix assisted pulsed laser evaporation (MAPLE) has been applied for deposition of thin polyethylene glycol (PEG) films with infrared laser light at 1064 nm. We have irradiated frozen targets (of 1 wt.% PEG dissolved in water) and measured the deposition rate in situ with a quartz crystal microbalance. The laser fluence needed to produce PEG films turned out to be unexpectedly high with a threshold of 9 J/cm 2 , and the deposition rate was much lower than that with laser light at 355 nm. Results from matrix assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOF-MS) analysis demonstrate that the chemistry, molecular weight and polydispersity of the PEG films were identical to the starting material. Studies of the film surface with scanning electron microscopy (SEM) indicate that the Si-substrate is covered by a relatively homogenous PEG film with few bare spots

  7. Thickness dependence of optical parameters for ZnTe thin films deposited by electron beam gun evaporation technique

    International Nuclear Information System (INIS)

    Salem, A.M.; Dahy, T.M.; El-Gendy, Y.A.

    2008-01-01

    Zinc telluride thin films with different thicknesses have been deposited by electron beam gun evaporation system onto glass substrates at room temperature. X-ray and electron diffraction techniques have been employed to determine the crystal structure and the particle size of the deposited films. The stoichiometry of the deposited films was confirmed by means of energy-dispersive X-ray spectrometry. The optical transmission and reflection spectrum of the deposited films have been recorded in the wavelength optical range 450-2500 nm. The variation of the optical parameters, i.e. refractive index, n, extinction coefficient, k, with thickness of the deposited films has been investigated. The refractive index dispersion in the transmission and low absorption region is adequately described by the single-oscillator model, whereby the values of the oscillator strength, oscillator position, dispersion parameter as well as the high-frequency dielectric constant were calculated for different film thickness. Graphical representations of the surface and volume energy loss function were also presented

  8. Ion beam sputter deposition of Ag films: Influence of process parameters on electrical and optical properties, and average grain sizes

    International Nuclear Information System (INIS)

    Bundesmann, C.; Feder, R.; Gerlach, J.W.; Neumann, H.

    2014-01-01

    Ion beam sputter deposition is used to grow several sets of Ag films under systematic variation of ion beam parameters, such as ion species and ion energy, and geometrical parameters, such as ion incidence angle and polar emission angle. The films are characterized concerning their thickness by profilometry, their electrical properties by 4-point-probe-measurements, their optical properties by spectroscopic ellipsometry, and their average grain sizes by X-ray diffraction. Systematic influences of the growth parameters on film properties are revealed. The film thicknesses show a cosine-like angular distribution. The electrical resistivity increases for all sets with increasing emission angle and is found to be considerably smaller for Ag films grown by sputtering with Xe ions than for the Ag films grown by sputtering with Ar ions. Increasing the ion energy or the ion incidence angle also increases the electrical resistivity. The optical properties, which are the result of free charge carrier absorption, follow the same trends. The observed trends can be partly assigned to changes in the average grain size, which are tentatively attributed to different energetic and angular distributions of the sputtered and back-scattered particles. - Highlights: • Ion beam sputter deposition under systematic variation of process parameters. • Film characterization: thickness, electrical, optical and structural properties. • Electrical resistivity changes considerably with ion species and polar emission angle. • Electrical and optical data reveal a strong correlation with grain sizes. • Change of film properties related to changing properties of film-forming particles

  9. Structure and properties of polyaniline nanocomposite coatings containing gold nanoparticles formed by low-energy electron beam deposition

    Science.gov (United States)

    Wang, Surui; Rogachev, A. A.; Yarmolenko, M. A.; Rogachev, A. V.; Xiaohong, Jiang; Gaur, M. S.; Luchnikov, P. A.; Galtseva, O. V.; Chizhik, S. A.

    2018-01-01

    Highly ordered conductive polyaniline (PANI) coatings containing gold nanoparticles were prepared by low-energy electron beam deposition method, with emeraldine base and chloroauric acid used as target materials. The molecular and chemical structure of the layers was studied by Fourier transform infrared, Raman, UV-vis and X-ray photoelectron spectroscopy. The morphology of the coatings was investigated by atomic force and transmission electron microscopy. Conductive properties were obtained by impedance spectroscopy method and scanning spreading resistance microscopy mode at the micro- and nanoscale. It was found that the emeraldine base layers formed from the products of electron-beam dispersion have extended, non-conductive polymer chains with partially reduced structure, with the ratio of imine and amine groups equal to 0.54. In case of electron-beam dispersion of the emeraldine base and chloroauric acid, a protoemeraldine structure is formed with conductivity 0.1 S/cm. The doping of this structure was carried out due to hydrochloric acid vapor and gold nanoparticles formed by decomposition of chloroauric acid, which have a narrow size distribution, with the most probable diameter about 40 nm. These gold nanoparticles improve the conductivity of the thin layers of PANI + Au composite, promoting intra- and intermolecular charge transfer of the PANI macromolecules aligned along the coating surface both at direct and alternating voltage. The proposed deposition method of highly oriented, conductive nanocomposite PANI-based coatings may be used in the direct formation of functional layers on conductive and non-conductive substrates.

  10. Multi-channel Andreev reflection in Co-W nanocontacts fabricated using focused electron/ion beam induced deposition.

    Science.gov (United States)

    Sharma, N; Vugts, P; Daniels, C; Keuning, W; Kohlhepp, J T; Kurnosikov, O; Koopmans, B

    2014-12-12

    We report multi-channel electron transport in nano-contacts fabricated using focused electron beam induced deposited (FEBID) cobalt and focused ion beam induced deposited (FIBID) tungsten. Anomalous Andreev reflection (AR) effect is observed to which the conventional Blonder-Tinkham-Klapwijk (BTK) fit cannot be applied. In specific, we have observed multiple number of shoulders near the AR peak, whose origin is unknown in literature. We explain this effect based on a simple model that takes into account the material properties of the FIBID grown W superconductor, as well as the specific interface properties that are an outcome of using FEBID/FIBID as a fabrication technique. We show that numerical calculations using the BTK approximation based on the consideration of multiple channels generate similar shoulders as we observed in the AR experiments. Electrical measurements and x-ray photoemission spectroscopy carried out on FIBID W deposits puts additional evidence towards multi-channel current transport occuring at the interface of the nanocontacts.

  11. Obesity and ultrasound-estimated visceral fat deposits in women undergoing Assisted Reproductive Technology (ART) procedures.

    Science.gov (United States)

    Ciavattini, Andrea; Montik, Nina; Clemente, Nicolò; Santoni, Fabrizia; Moriconi, Lorenzo; Serri, Matteo; Barbadoro, Pamela; Sabbatinelli, Jacopo; Vignini, Arianna

    2017-12-01

    The aim of this study was to evaluate the influence of body mass index (BMI) and ultrasound-estimated visceral adipose tissue deposits on oocyte quality and pregnancy rate in women undergoing Assisted Reproductive Technology (ART) procedures. The study included 58 women who underwent ART procedures. According to their BMI, the women were divided into normal weight and overweight/obese; an ultrasound evaluation of preperitoneal fat thickness (PFT) was also performed for each patient. The oocyte quality was then assessed, and samples of follicular fluid were collected from each woman, in order to evaluate the intrafollicular concentration of reactive oxygen species (ROS) as markers of oxidative stress and pro-inflammatory cytokines (IL-1β and IL-6) as markers of chronic inflammation. A negative correlation was found between BMI (as well as PFT) and the number of retrieved oocytes (r = -0.3; p ART procedures, BMI and PFT negatively influence the number of oocytes retrieved and their quality. However, on multivariable analysis, only age, PFT and number of retrieved oocytes affect the success rate of ART procedures.

  12. Ordered ZnO/AZO/PAM nanowire arrays prepared by seed-layer-assisted electrochemical deposition

    International Nuclear Information System (INIS)

    Shen, Yu-Min; Pan, Chih-Huang; Wang, Sheng-Chang; Huang, Jow-Lay

    2011-01-01

    An Al-doped ZnO (AZO) seed layer is prepared on the back side of a porous alumina membrane (PAM) substrate by spin coating followed by annealing in a vacuum at 400 °C. Zinc oxide in ordered arrays mediated by a high aspect ratio and an ordered pore array of AZO/PAM is synthesized. The ZnO nanowire array is prepared via a 3-electrode electrochemical deposition process using ZnSO 4 and H 2 O 2 solutions at a potential of − 1 V (versus saturated calomel electrode) and temperatures of 65 and 80 °C. The microstructure and chemical composition of the AZO seed layer and ZnO/AZO/PAM nanowire arrays are characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). Results indicate that the ZnO/AZO/PAM nanowire arrays were assembled in the nanochannel of the porous alumina template with diameters of 110–140 nm. The crystallinity of the ZnO nanowires depends on the AZO seed layer during the annealing process. The nucleation and growth process of ZnO/AZO/PAM nanowires are interpreted by the seed-layer-assisted growth mechanism.

  13. Growths of indium gallium nitride nanowires by plasma-assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Wei-Che [Department of Chemical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Hong, Franklin Chau-Nan, E-mail: hong@mail.ncku.edu.tw [Department of Chemical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China)

    2014-11-03

    InGaN nanowires (NWs) were grown on Si(100) at 700 °C using Au catalyst in a plasma-assisted chemical vapor deposition reactor. As the indium vapor pressure was low around 16 mPa during the growths, only the curved GaN NWs could be grown containing indium impurities. By increasing the indium vapor pressure to 53 mPa during the growths, InGaN NWs were transformed to less curved NWs with a broad distribution of NW diameters from 20 to 90 nm. The room temperature photoluminescence of InGaN NWs grown at a high indium vapor pressure showed a broad emission peak at 417 nm, corresponding to an average of 14.5% indium composition in the NWs, with a large full-width at half maximum of 77 nm. Transmission electron microscopy characterization of InGaN NWs showed that the growth orientation was along [100] for the low indium vapor pressure growths and was transformed to along [001] for the high indium vapor pressure growths. - Highlights: • High-quality single-crystalline InGaN nanowires were synthesized. • The indium content of InGaN nanowires grown at 700 °C did not exceed 15%. • A small amount of indium added into the nanowires induced stacking faults.

  14. Distribution of Energy Deposited in Plastic Tubing and Copper-Wire Insulation by Electron Beam Irradiation

    DEFF Research Database (Denmark)

    Pedersen, Walther Batsberg; Miller, Arne; Pejtersen, K.

    1978-01-01

    Scanned electron beam treatment is used to improve the physical properties of certain polymers, such as shrinkable plastic tubing and insulated wire and cable. Tubing or wires are passed at high speed under the beam scanner, and the material is irradiated to absorbed doses of several Mrad...... as uniformly as possible, usually by means of a multipass arrangement. In the present study, using irradiation by a scanned 0.4 MeV electron beam, measurements were made of high-resolution distributions of absorbed dose in polyethylene tubing and copper wire coated with polyethylene, nylon, or polyvinyl...... chloride insulation. Radiochromic dye films equivalent to the insulating materials were used as accurate dosimeters having a response independent of dose rate. Irradiations were in various geometries, wire and plastic thicknesses, positions along the beam scan, and with different backing materials near...

  15. Damage evaluation in metal structures subjected to high energy deposition due to particle beams

    CERN Document Server

    Peroni, L; Dallocchio, A

    2011-01-01

    The unprecedented energy intensities of modern hadron accelerators yield special problems with the materials that are placed close to or into the high intensity beams. The energy stored in a single beam of LHC particle accelerator is equivalent to about 80 kg of TNT explosive, stored in a transverse beam area with a typical value of 0.2 mm×0.2 mm. The materials placed close to the beam are used at, or even beyond, their damage limits. However, it is very difficult to predict structural efficiency and robustness accurately: beam-induced damage for high energy and high intensity occurs in a regime where practical experience does not exist. The interaction between high energy particle beams and metals induces a sudden non uniform temperature increase. This provokes a dynamic response of the structure entailing thermal stress waves and thermally induced vibrations or even the failure of the component. This study is performed in order to estimate the damage on a copper component due to the impact with a 7 TeV pro...

  16. A new approach for 3D reconstruction from bright field TEM imaging: Beam precession assisted electron tomography

    International Nuclear Information System (INIS)

    Rebled, J.M.; Yedra, Ll.; Estrade, S.; Portillo, J.; Peiro, F.

    2011-01-01

    The successful combination of electron beam precession and bright field electron tomography for 3D reconstruction is reported. Beam precession is demonstrated to be a powerful technique to reduce the contrast artifacts due to diffraction and curvature in thin foils. Taking advantage of these benefits, Precession assisted electron tomography has been applied to reconstruct the morphology of Sn precipitates embedded in an Al matrix, from a tilt series acquired in a range from +49 o to -61 o at intervals of 2 o and with a precession angle of 0.6 o in bright field mode. The combination of electron tomography and beam precession in conventional TEM mode is proposed as an alternative procedure to obtain 3D reconstructions of nano-objects without a scanning system or a high angle annular dark field detector. -- Highlights: → Electron beam precession reduces spurious diffraction contrast in bright field mode. → Bend contour related contrast depends on precession angle. → Electron beam precession is combined with bright field electron tomography. → Precession assisted BF tomography allowed 3D reconstruction of a Sn precipitate.

  17. Plasma assisted chemical vapor deposited tantalum silicon nitride thin films for applications in nanoscale devices

    Science.gov (United States)

    Zeng, Wanxue

    The scaling issues resulting from diminishing device feature sizes have prompted the investigation of alternative materials and deposition techniques for copper diffusion barrier applications. As device sizes shrink to sub 100-nm technology nodes, the allowable copper diffusion barrier thickness falls to less than 10 nm. In this respect, novel materials are needed to stop copper diffusion into surrounding materials. TaSiN has been regarded as one of the most promising materials for copper diffusion barrier applications, owing to its excellent thermal stability, amorphous structure, and low resistivity. In this respect, a plasma assisted chemical vapor deposition (PACVD) process using TaF5, SiI4, N2, H2, and in-situ radio frequency (RF) plasma was optimized for depositing ultrathin TaSiN films, employing a design of experiments (DOE) approach. Film properties were characterized using Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), Auger electron spectroscopy (AES), x-ray diffraction (XRD), atomic force microscopy (AFM), four-point resistivity probe, and cross-section scanning electron microscopy (CS-SEM). The TaSiN films, deposited via optimized process conditions, exhibited low resistivity, low contamination levels, smooth surface morphology, good step coverage, excellent thermal stability, and amorphous structure. The copper diffusion barrier performance of optimized PACVD TaSiN films was assessed in Cu/TaSiN/Si structures using traditional high temperature annealing methods and in Cu/TaSiN/SiO2/Si structures using a triangular voltage sweep (TVS) method. The results from the former technique show that the diffusion barrier performance of TaSiN films with higher silicon concentration, corresponding to a more prevalent amorphous structure, leads to worse Cu diffusion barrier performance. The results from the TaSiN barrier testing also show that thinner TaSiN films (≤5 nm) performed better as Cu diffusion barriers than thicker Ta

  18. Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    García Núñez, C., E-mail: carlos.garcia@uam.es; Braña, A. F.; Pau, J. L.; Ghita, D.; García, B. J. [Grupo de Electrónica y Semiconductores, Departamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Shen, G.; Wilbert, D. S.; Kim, S. M.; Kung, P. [Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, Alabama 35487 (United States)

    2014-01-21

    Surface optical (SO) phonons were studied by Raman spectroscopy in GaAs nanowires (NWs) grown by Ga-assisted chemical beam epitaxy on oxidized Si(111) substrates. NW diameters and lengths ranging between 40 and 65 nm and between 0.3 and 1.3 μm, respectively, were observed under different growth conditions. The analysis of the Raman peak shape associated to either longitudinal or surface optical modes gave important information about the crystal quality of grown NWs. Phonon confinement model was used to calculate the density of defects as a function of the NW diameter resulting in values between 0.02 and 0.03 defects/nm, indicating the high uniformity obtained on NWs cross section size during growth. SO mode shows frequency downshifting as NW diameter decreases, this shift being sensitive to NW sidewall oxidation. The wavevector necessary to activate SO phonon was used to estimate the NW facet roughness responsible for SO shift.

  19. Nanoparticulate cerium dioxide and cerium dioxide-titanium dioxide composite thin films on glass by aerosol assisted chemical vapour deposition

    International Nuclear Information System (INIS)

    Qureshi, Uzma; Dunnill, Charles W.; Parkin, Ivan P.

    2009-01-01

    Two series of composite thin films were deposited on glass by aerosol assisted chemical vapour deposition (AACVD)-nanoparticulate cerium dioxide and nanoparticulate cerium dioxide embedded in a titanium dioxide matrix. The films were analysed by a range of techniques including UV-visible absorption spectroscopy, X-ray diffraction, scanning electron microscopy and energy dispersive analysis by X-rays. The AACVD prepared films showed the functional properties of photocatalysis and super-hydrophilicity. The CeO 2 nanoparticle thin films displaying photocatalysis and photo-induced hydrophilicity almost comparable to that of anatase titania.

  20. Industrial ion source technology. [for ion beam etching, surface texturing, and deposition

    Science.gov (United States)

    Kaufman, H. R.

    1977-01-01

    Plasma probe surveys were conducted in a 30-cm source to verify that the uniformity in the ion beam is the result of a corresponding uniformity in the discharge-chamber plasma. A 15 cm permanent magnet multipole ion source was designed, fabricated, and demonstrated. Procedures were investigated for texturing a variety of seed and surface materials for controlling secondary electron emission, increasing electron absorption of light, and improved attachment of biological tissue for medical implants using argon and tetrafluoromethane as the working gases. The cross section for argon-argon elastic collisions in the ion-beam energy range was calculated from interaction potentials and permits calculation of beam interaction effects that can determine system pumping requirements. The data also indicate that different optimizations of ion-beam machines will be advantageous for long and short runs, with 1 mA-hr/cm being the rough dividing line for run length. The capacity to simultaneously optimize components in an ion-beam machine for a single application, a capacity that is not evident in competitive approaches such as diode sputtering is emphasized.

  1. Large area ion and plasma beam sources

    Energy Technology Data Exchange (ETDEWEB)

    Waldorf, J. [IPT Ionen- und Plasmatech. GmbH, Kaiserslautern (Germany)

    1996-06-01

    In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.).

  2. Large area ion and plasma beam sources

    International Nuclear Information System (INIS)

    Waldorf, J.

    1996-01-01

    In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.)

  3. The rf-power dependences of the deposition rate, the hardness and the corrosion-resistance of the chromium nitride film deposited by using a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Lim, Jongmin; Lee, Chongmu

    2006-01-01

    The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and possibly causes cancer in humans. Therefore, it is indispensable to develop an alternative deposition technique. Dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrN x deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-power were investigated to see the feasibility of sputtering as an alternative technique for chromium plating. The dual ion beam sputtering system used in this study was designed in such a way as the primary argon ion beam and the secondary nitrogen ion beam are injected toward the target and the substrate, respectively so that the chromium atoms at the chromium target surface may not nearly react with nitrogen atoms. The hardness and the surface roughness were measured by a micro-Vicker's hardness tester and an atomic force microscope (AFM), respectively. X-ray diffraction analyses were performed to identify phases in the films. The deposition rate of CrN x depends more strongly upon the rf-power for argon ion beam than that for nitrogen ion beam. The hardness of the CrN x film is highest when the volume percent of the Cr 2 N phase in the film is highest. Amorphous films are obtained when the rf-power for nitrogen ion beam is much higher than that for argon ion beam. The CrN x film deposited by using the sputtering technique under the optimal condition provides corrosion-resistance comparable to that of the electroplated chromium

  4. Fabrication of three-dimensional scaffolds using precision extrusion deposition with an assisted cooling device

    Energy Technology Data Exchange (ETDEWEB)

    Hamid, Q; Snyder, J; Wang, C; Guceri, S; Sun, W [Department of Mechanical Engineering and Mechanics, Drexel University, Philadelphia, PA (United States); Timmer, M; Hammer, J, E-mail: sunwei@drexel.edu [Advanced Technologies and Regenerative Medicine, Somerville, NJ (United States)

    2011-09-15

    In the field of biofabrication, tissue engineering and regenerative medicine, there are many methodologies to fabricate a building block (scaffold) which is unique to the target tissue or organ that facilitates cell growth, attachment, proliferation and/or differentiation. Currently, there are many techniques that fabricate three-dimensional scaffolds; however, there are advantages, limitations and specific tissue focuses of each fabrication technique. The focus of this initiative is to utilize an existing technique and expand the library of biomaterials which can be utilized to fabricate three-dimensional scaffolds rather than focusing on a new fabrication technique. An expanded library of biomaterials will enable the precision extrusion deposition (PED) device to construct three-dimensional scaffolds with enhanced biological, chemical and mechanical cues that will benefit tissue generation. Computer-aided motion and extrusion drive the PED to precisely fabricate micro-scaled scaffolds with biologically inspired, porosity, interconnectivity and internal and external architectures. The high printing resolution, precision and controllability of the PED allow for closer mimicry of tissues and organs. The PED expands its library of biopolymers by introducing an assisting cooling (AC) device which increases the working extrusion temperature from 120 to 250 deg. C. This paper investigates the PED with the integrated AC's capabilities to fabricate three-dimensional scaffolds that support cell growth, attachment and proliferation. Studies carried out in this paper utilized a biopolymer whose melting point is established to be 200 deg. C. This polymer was selected to illustrate the newly developed device's ability to fabricate three-dimensional scaffolds from a new library of biopolymers. Three-dimensional scaffolds fabricated with the integrated AC device should illustrate structural integrity and ability to support cell attachment and proliferation.

  5. Reactive Ar ion beam sputter deposition of TiO{sub 2} films: Influence of process parameters on film properties

    Energy Technology Data Exchange (ETDEWEB)

    Bundesmann, C., E-mail: carsten.bundesmann@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig (Germany); Lautenschläger, T.; Thelander, E. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig (Germany); Spemann, D. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig (Germany); Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig (Germany)

    2017-03-15

    Highlights: • Ion beam sputter deposition under systematic variation of process parameters. • Thickness, growth rate, structure, mass density, composition, optical properties. • All TiO{sub 2} films are amorphous with systematic variations in mass density. • Considerable amount of inert process gas correlated with scattering angle. • Correlation of mass density and index of refraction. - Abstract: Several sets of TiO{sub 2} films were grown by Ar ion beam sputter deposition under systematic variation of ion energy and geometrical parameters (ion incidence angle and polar emission angle). The films were characterized concerning thickness, growth rate, structural properties, composition, mass density, and optical properties. The film thicknesses show a cosine-like angular distribution, and the growth rates were found to increase with increasing ion incidence angle and ion energy. All films are amorphous and stoichiometric, but can contain a considerable amount of backscattered primary particles. The atomic fraction of Ar particles decreases systematically with increasing scattering angle, independent from ion energy and ion incidence angle. Mass density and index of refraction show similar systematic variations with ion energy and geometrical parameters. The film properties are mainly influenced by the scattering geometry, and only slightly by ion energy and ion incidence angle. The variations in the film properties are tentatively assigned to changes in the angular and energy distribution of the sputtered target particles and back-scattered primary particles.

  6. Internal transport barrier triggered by non-linear lower hybrid wave deposition under condition of beam-driven toroidal rotation

    International Nuclear Information System (INIS)

    Gao, Q. D.; Budny, R. V.

    2015-01-01

    By using gyro-Landau fluid transport model (GLF23), time-dependent integrated modeling is carried out using TRANSP to explore the dynamic process of internal transport barrier (ITB) formation in the neutral beam heating discharges. When the current profile is controlled by LHCD (lower hybrid current drive), with appropriate neutral beam injection, the nonlinear interplay between the transport determined gradients in the plasma temperature (T i,e ) and toroidal velocity (V ϕ ) and the E×B flow shear (including q-profile) produces transport bifurcations, generating spontaneously a stepwise growing ITB. In the discharge, the constraints imposed by the wave propagation condition causes interplay of the LH driven current distribution with the plasma configuration modification, which constitutes non-linearity in the LH wave deposition. The non-linear effects cause bifurcation in LHCD, generating two distinct quasi-stationary reversed magnetic shear configurations. The change of current profile during the transition period between the two quasi-stationary states results in increase of the E×B shearing flow arising from toroidal rotation. The turbulence transport suppression by sheared E×B flow during the ITB development is analysed, and the temporal evolution of some parameters characterized the plasma confinement is examined. Ample evidence shows that onset of the ITB development is correlated with the enhancement of E×B shearing rate caused by the bifurcation in LHCD. It is suggested that the ITB triggering is associated with the non-linear effects of the LH power deposition

  7. Optimization of the plasma-assisted chemical vapour deposition of silica-like thin films at low temperatures

    Directory of Open Access Journals (Sweden)

    P. L. Crouse

    1996-07-01

    Full Text Available Results pertaining to the plasma-assisted chemical vapour deposition (PACVD of SiOᵪCᵧ thin films at room temperature using a self-biasing radio-frequency plasma reactor are presented. Response surface analysis was used for experimental design. A simple technique is illustrated for the optimizing of any physical property, subject to the constraints imposed by the apparatus and by the required values of other physical properties.

  8. Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure

    Czech Academy of Sciences Publication Activity Database

    Schäfer, J.; Fricke, K.; Mika, Filip; Pokorná, Zuzana; Zajíčková, L.; Foest, R.

    2017-01-01

    Roč. 630, MAY 30 (2017), s. 71-78 ISSN 0040-6090 R&D Projects: GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : plasma jet * liquid assisted plasma enhanced chemical * vapour deposition * silicon oxide Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Coating and films Impact factor: 1.879, year: 2016

  9. Superhydrophobic photocatalytic surfaces through direct incorporation of titania nanoparticles into a polymer matrix by aerosol assisted chemical vapor deposition.

    Science.gov (United States)

    Crick, Colin R; Bear, Joseph C; Kafizas, Andreas; Parkin, Ivan P

    2012-07-10

    A new class of superhydrophobic photocatalytic surfaces that are self-cleaning through light-induced photodegradation and the Lotus effect are presented. The films are formed in a single-step aerosol-assisted chemical vapor deposition (AACVD) process. The films are durable and show no degradation on continuous exposure to UV-C radiation. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

    Science.gov (United States)

    Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

    2013-09-01

    Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

  11. Deposition of metallic gallium on re-crystallized ceramic material during focused ion beam milling

    Energy Technology Data Exchange (ETDEWEB)

    Muñoz-Tabares, J.A., E-mail: j.a.munoz.tabares@gmail.com [Instituto de Física, Universidad Nacional Autónoma de México, Circuito de la Investigación Científica s/n, Cd Universitaria, 04510 México DF, México (Mexico); Anglada, M. [Departament de Ciència dels Materials i Enginyeria Metallúrgica, Universitat Politècnica de Catalunya, Avda. Diagonal 647 (ETSEIB), 08028 Barcelona (Spain); Reyes-Gasga, J. [Instituto de Física, Universidad Nacional Autónoma de México, Circuito de la Investigación Científica s/n, Cd Universitaria, 04510 México DF, México (Mexico)

    2013-12-15

    We report a new kind of artifact observed in the preparation of a TEM sample of zirconia by FIB, which consists in the deposition of metallic gallium nano-dots on the TEM sample surface. High resolution TEM images showed a microstructure of fine equiaxed grains of ∼ 5 nm, with some of them possessing two particular characteristics: high contrast and well-defined fast Fourier transform. These grains could not be identified as any phase of zirconia but it was possible to identify them as gallium crystals in the zone axis [110]. Based on HRTEM simulations, the possible orientations between zirconia substrate and deposited gallium are discussed in terms of lattice mismatch and oxygen affinity. - Highlights: • We show a new type of artifact induced during preparation of TEM samples by FIB. • Deposition of Ga occurs due to its high affinity for oxygen. • Materials with small grain size (∼ 5 nm) could promote Ga deposition. • Small grain size permits the elastic accommodation of deposited Ga.

  12. Intrinsic efficiency and critical power deposition in the e-beam sustained Ar:Xe laser

    NARCIS (Netherlands)

    Botma, H.; Botma, H.; Peters, P.J.M.; Witteman, W.J.

    1991-01-01

    Experimental investigations on an e-beam sustained near infrared Ar:Xe laser have been carried out to determine the intrinsic efficiency at optimized conditions. A parametric study at different sustainer currents reveals a maximum output energy depending on current density. Up to 8 bar the optimized

  13. Evaluation of Beam Losses and Energy Depositions for a Possible Phase II Design for LHC Collimation

    CERN Document Server

    Lari, L; Bracco, C; Brugger, M; Cerutti, F; Doyle, E; Ferrari, A; Keller, L; Lundgren, S; Keller, L; Mauri, M; Redaelli, S; Sarchiapone, L; Smith, J; Vlachoudis, V; Weiler, T

    2008-01-01

    The LHC beams are designed to have high stability and to be stored for many hours. The nominal beam intensity lifetime is expected to be of the order of 20h. The Phase II collimation system has to be able to handle particle losses in stable physics conditions at 7 TeV in order to avoid beam aborts and to allow correction of parameters and restoration to nominal conditions. Monte Carlo simulations are needed in order to evaluate the behavior of metallic high-Z collimators during operation scenarios using a realistic distribution of losses, which is a mix of the three limiting halo cases. Moreover, the consequences in the IR7 insertion of the worst (case) abnormal beam loss are evaluated. The case refers to a spontaneous trigger of the horizontal extraction kicker at top energy, when Phase II collimators are used. These studies are an important input for engineering design of the collimation Phase II system and for the evaluation of their effect on adjacent components. The goal is to build collimators that can ...

  14. Metal-insulator transition in Pt-C nanowires grown by focused-ion-beam-induced deposition

    International Nuclear Information System (INIS)

    Fernandez-Pacheco, A.; Ibarra, M. R.; De Teresa, J. M.; Cordoba, R.

    2009-01-01

    We present a study of the transport properties of Pt-C nanowires created by focused-ion-beam (FIB)-induced deposition. By means of the measurement of the resistance while the deposit is being performed, we observe a progressive decrease in the nanowire resistivity with thickness, changing from 10 8 μΩ cm for thickness ∼20 nm to a lowest saturated value of 700 μΩ cm for thickness >150 nm. Spectroscopy analysis indicates that this dependence on thickness is caused by a gradient in the metal-carbon ratio as the deposit is grown. We have fabricated nanowires in different ranges of resistivity and studied their conduction mechanism as a function of temperature. A metal-insulator transition as a function of the nanowire thickness is observed. The results will be discussed in terms of the Mott-Anderson theory for noncrystalline materials. An exponential decrease in the conductance with the electric field is found for the most resistive samples, a phenomenon understood by the theory of hopping in lightly doped semiconductors under strong electric fields. This work explains the important discrepancies found in the literature for Pt-C nanostructures grown by FIB and opens the possibility to tune the transport properties of this material by an appropriate selection of the growth parameters.

  15. Thin pyrite (FeS{sub 2}) films by molecular beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bronold, M.; Kubala, S.; Pettenkofer, C.; Jaegermann, W. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-07-30

    Polycrystalline pyrite films have been prepared by evaporation of Fe and S from separate molecular beam sources. It is shown by X-ray diffraction and by X-ray and ultraviolet photoelectron spectroscopy that at S pressures of 6-8.10{sup -5}, Pa pyrite is formed at a substrate temperature of 390 K. At higher temperatures, pyrrhotite (Fe{sub 7}S{sub 8}) is present in the films. (orig.)

  16. Computer simulation of scattered ion and sputtered species effects in ion beam sputter-deposition of high temperature superconducting thin films

    International Nuclear Information System (INIS)

    Krauss, A.R.; Auciello, O.

    1992-01-01

    Ion beam sputter-deposition is a technique currently used by many groups to produce single and multicomponent thin films. This technique provides several advantages over other deposition methods, which include the capability for yielding higher film density, accurate stoichiometry control, and smooth surfaces. However, the relatively high kinetic energies associated with ion beam sputtering also lead to difficulties if the process is not properly controlled. Computer simulations have been performed to determine net deposition rates, as well as the secondary erosion, lattice damage, and gas implantation in the films, associated with primary ions scattered from elemental Y, Ba and Cu targets used to produce high temperature superconducting Y-Ba-Cu-O films. The simulations were performed using the TRIM code for different ion masses and kinetic energies, and different deposition geometries. Results are presented for primary beams of Ar + , Kr + and Xe + incident on Ba and Cu targets at 0 degrees and 45 degrees with respect to the surface normal, with the substrate positioned at 0 degrees and 45 degrees. The calculations indicate that the target composition, mass and kinetic energy of the primary beam, angle of incidence on the target, and position and orientation of the substrate affect the film damage and trapped primary beam gas by up to 5 orders of magnitude

  17. Low-dose patterning of platinum nanoclusters on carbon nanotubes by focused-electron-beam-induced deposition as studied by TEM

    Directory of Open Access Journals (Sweden)

    Xiaoxing Ke

    2013-02-01

    Full Text Available Focused-electron-beam-induced deposition (FEBID is used as a direct-write approach to decorate ultrasmall Pt nanoclusters on carbon nanotubes at selected sites in a straightforward maskless manner. The as-deposited nanostructures are studied by transmission electron microscopy (TEM in 2D and 3D, demonstrating that the Pt nanoclusters are well-dispersed, covering the selected areas of the CNT surface completely. The ability of FEBID to graft nanoclusters on multiple sides, through an electron-transparent target within one step, is unique as a physical deposition method. Using high-resolution TEM we have shown that the CNT structure can be well preserved thanks to the low dose used in FEBID. By tuning the electron-beam parameters, the density and distribution of the nanoclusters can be controlled. The purity of as-deposited nanoclusters can be improved by low-energy electron irradiation at room temperature.

  18. Low-dose patterning of platinum nanoclusters on carbon nanotubes by focused-electron-beam-induced deposition as studied by TEM

    Science.gov (United States)

    Bittencourt, Carla; Bals, Sara; Van Tendeloo, Gustaaf

    2013-01-01

    Summary Focused-electron-beam-induced deposition (FEBID) is used as a direct-write approach to decorate ultrasmall Pt nanoclusters on carbon nanotubes at selected sites in a straightforward maskless manner. The as-deposited nanostructures are studied by transmission electron microscopy (TEM) in 2D and 3D, demonstrating that the Pt nanoclusters are well-dispersed, covering the selected areas of the CNT surface completely. The ability of FEBID to graft nanoclusters on multiple sides, through an electron-transparent target within one step, is unique as a physical deposition method. Using high-resolution TEM we have shown that the CNT structure can be well preserved thanks to the low dose used in FEBID. By tuning the electron-beam parameters, the density and distribution of the nanoclusters can be controlled. The purity of as-deposited nanoclusters can be improved by low-energy electron irradiation at room temperature. PMID:23399584

  19. Direct fabrication of a W-C SNS Josephson junction using focused-ion-beam chemical vapour deposition

    International Nuclear Information System (INIS)

    Dai, Jun; Kometani, Reo; Ishihara, Sunao; Warisawa, Shin’ichi; Onomitsu, Koji; Krockenberger, Yoshiharu; Yamaguchi, Hiroshi

    2014-01-01

    A tungsten-carbide (W-C) superconductor/normal metal/superconductor (SNS) Josephson junction has been fabricated using focused-ion-beam chemical vapour deposition (FIB-CVD). Under certain process conditions, the component ratio has been tuned from W: C: Ga = 26%: 66%: 8% in the superconducting wires to W: C: Ga = 14%: 79%: 7% in the metallic junction. The critical current density at 2.5 K in the SNS Josephson junction is 1/3 of that in W-C superconducting nanowire. Also, a Fraunhofer-like oscillation of critical current in the junction with four periods is observed. FIB-CVD opens avenues for novel functional superconducting nanodevices. (paper)

  20. Study of Sb/SnO2 bi-layer films prepared by ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Wang, Chun-Min; Huang, Chun-Chieh; Kuo, Jui-Chao; Huang, Jow-Lay

    2014-01-01

    In the present work, bi-layer thin films of Sb/SnO 2 were produced on unheated glass substrates using ion beam sputtering (IBS) technique without post annealing treatment. The thickness of Sb layers was varied from 2 to 10 nm and the Sb layers were deposited on SnO 2 layers having thicknesses of 40 nm to 115 nm. The effect of thickness was studied on the morphological, electrical and optical properties. The Sb/SnO 2 bi-layer resulted in lowering the electrical resistivity as well as reducing the optical transmittance. However, the optical and electrical properties of the bi-layer films were mainly influenced by the thickness of Sb layers due to progressive transfer in structures from aggregate to continuous films. The bi-layer films show the electrical resistivity of 1.4 × 10 −3 Ω cm and an optical transmittance of 26% for Sb film having 10 nm thickness. - Highlights: • Bi-layer Sb/SnO 2 structures were synthesized by ion beam sputtering (IBS) technique. • The 6 nm-thick Sb film is a transition region in this study. • The conductivity of the bi-layer films is increased as Sb thickness increases. • The transmittance of the bi-layer films is decreased as Sb thickness increases

  1. Numerical simulations of energy deposition caused by 50 MeV—50 TeV proton beams in copper and graphite targets

    Science.gov (United States)

    Nie, Y.; Schmidt, R.; Chetvertkova, V.; Rosell-Tarragó, G.; Burkart, F.; Wollmann, D.

    2017-08-01

    The conceptual design of the Future Circular Collider (FCC) is being carried out actively in an international collaboration hosted by CERN, for the post-Large Hadron Collider (LHC) era. The target center-of-mass energy of proton-proton collisions for the FCC is 100 TeV, nearly an order of magnitude higher than for LHC. The existing CERN accelerators will be used to prepare the beams for FCC. Concerning beam-related machine protection of the whole accelerator chain, it is critical to assess the consequences of beam impact on various accelerator components in the cases of controlled and uncontrolled beam losses. In this paper, we study the energy deposition of protons in solid copper and graphite targets, since the two materials are widely used in magnets, beam screens, collimators, and beam absorbers. Nominal injection and extraction energies in the hadron accelerator complex at CERN were selected in the range of 50 MeV-50 TeV. Three beam sizes were studied for each energy, corresponding to typical values of the betatron function. Specifically for thin targets, comparisons between fluka simulations and analytical Bethe equation calculations were carried out, which showed that the damage potential of a few-millimeter-thick graphite target and submillimeter-thick copper foil can be well estimated directly by the Bethe equation. The paper provides a valuable reference for the quick evaluation of potential damage to accelerator elements over a large range of beam parameters when beam loss occurs.

  2. Organic Thin Films Deposited by Emulsion-Based, Resonant Infrared, Matrix-Assisted Pulsed Laser Evaporation: Fundamentals and Applications

    Science.gov (United States)

    Ge, Wangyao

    Thin film deposition techniques are indispensable to the development of modern technologies as thin film based optical coatings, optoelectronic devices, sensors, and biological implants are the building blocks of many complicated technologies, and their performance heavily depends on the applied deposition technique. Particularly, the emergence of novel solution-processed materials, such as soft organic molecules, inorganic compounds and colloidal nanoparticles, facilitates the development of flexible and printed electronics that are inexpensive, light weight, green and smart, and these thin film devices represent future trends for new technologies. One appealing feature of solution-processed materials is that they can be deposited into thin films using solution-processed deposition techniques that are straightforward, inexpensive, high throughput and advantageous to industrialize thin film based devices. However, solution-processed techniques rely on wet deposition, which has limitations in certain applications, such as multi-layered film deposition of similar materials and blended film deposition of dissimilar materials. These limitations cannot be addressed by traditional, vacuum-based deposition techniques because these dry approaches are often too energetic and can degrade soft materials, such as polymers, such that the performance of resulting thin film based devices is compromised. The work presented in this dissertation explores a novel thin film deposition technique, namely emulsion-based, resonant infrared, matrix-assisted pulsed laser evaporation (RIR-MAPLE), which combines characteristics of wet and dry deposition techniques for solution-processed materials. Previous studies have demonstrated the feasibility of emulsion-based RIR-MAPLE to deposit uniform and continuous organic, nanoparticle and blended films, as well as hetero-structures that otherwise are difficult to achieve. However, fundamental understanding of the growth mechanisms that govern

  3. Optimization of the LHC interaction region with respect to beam-induced energy deposition

    International Nuclear Information System (INIS)

    Mokhov, N.V.; Strait, J.B.

    1996-06-01

    Energy deposition in the superconducting magnets by particles from p- p collisions is a significant challenge for the design of the LHC high luminosity insertions. We have studies the dependence of the energy deposition on the apertures and strengths of insertion magnets and on the placement of absorbers in front of and within the quadrupoles. Monte Carlo simulations were made using the code DTUJET to generate 7x7 TeV p-p events and the code MARS to follow hadronic and electromagnetic cascades induced in the insertion components. The 3D geometry and magnetic field descriptions of the LHC-4.1 lattice were used. With a quadrupole coil aperture ≥70 mm, absorbers can be placed within the magnet bore which reduce the peak power density, at full luminosity, below 0.5 mW/g, a level that should allow the magnets to operate at their design field. The total heat load can be removed by a cooling system similar to that used in the main magnets

  4. Controlling field-effect mobility in pentacene-based transistors by supersonic molecular-beam deposition

    International Nuclear Information System (INIS)

    Toccoli, T.; Pallaoro, A.; Coppede, N.; Iannotta, S.; De Angelis, F.; Mariucci, L.; Fortunato, G.

    2006-01-01

    We show that pentacene field-effect transistors, fabricated by supersonic molecular beams, have a performance strongly depending on the precursor's kinetic energy (K E ). The major role played by K E is in achieving highly ordered and flat films. In the range K E ≅3.5-6.5 eV, the organic field effect transistor linear mobility increases of a factor ∼5. The highest value (1.0 cm 2 V -1 s -1 ) corresponds to very uniform and flat films (layer-by-layer type growth). The temperature dependence of mobility for films grown at K E >6 eV recalls that of single crystals (bandlike) and shows an opposite trend for films grown at K E ≤5.5 eV

  5. A versatile sonication-assisted deposition-reduction method for preparing supported metal catalysts for catalytic applications.

    Science.gov (United States)

    Padilla, Romen Herrera; Priecel, Peter; Lin, Ming; Lopez-Sanchez, Jose Antonio; Zhong, Ziyi

    2017-03-01

    This work aims to develop a rapid and efficient strategy for preparing supported metal catalysts for catalytic applications. The sonication-assisted reduction-precipitation method was employed to prepare the heterogeneous mono- and bi-metallic catalysts for photocatalytic degradation of methyl orange (MO) and preferential oxidation (PROX) of CO in H 2 -rich gas. In general, there are three advantages for the sonication-assisted method as compared with the conventional methods, including high dispersion of metal nanoparticles on the catalyst support, the much higher deposition efficiency (DE) than those of the deposition-precipitation (DP) and co-precipitation (CP) methods, and the very fast preparation, which only lasts 10-20s for the deposition. In the AuPd/TiO 2 catalysts series, the AuPd(3:1)/TiO 2 catalyst is the most active for MO photocatalytic degradation; while for PROX reaction, Ru/TiO 2 , Au-Cu/SBA-15 and Pt/γ-Al 2 O 3 catalysts are very active, and the last one showed high stability in the lifetime test. The structural characterization revealed that in the AuPd(3:1)/TiO 2 catalyst, Au-Pd alloy particles were formed and a high percentage of Au atoms was located at the surface. Therefore, this sonication-assisted method is efficient and rapid in the preparation of supported metal catalysts with obvious structural characteristics for various catalytic applications. Copyright © 2016 Elsevier B.V. All rights reserved.

  6. X-ray photoelectron and Raman studies of microwave Plasma Assisted Chemical Vapour Deposition (PACVD) diamond films

    Science.gov (United States)

    Humbert, Bernard; Hellala, Nesrine; Ehrhardt, Jean Jacques; Barrat, Silvère; Bauer-grosse, Elizabeth

    2008-08-01

    X-ray photoelectron and Raman spectroscopies were used to investigate the chemical and the structural properties of thin diamond films synthesised by Plasma Assisted Chemical Vapour Deposition (PACVD). Continuous polycrystalline diamond films were grown under different plasma conditions and based on the combination of detailed XPS and Raman spectroscopic analysis two main topics are highlighted (i) the stress measurements were discussed by distinguishing clearly the chemical effects from the mechanical effects; (ii) an electronic gap at 2.7 eV probed by Raman resonance that corresponds to an energy loss peak on the XPS carbon signal, was related to the surface hydrogenation.

  7. Deposition of matrix-free fullerene films with improved morphology by matrix-assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Canulescu, Stela; Schou, Jørgen; Fæster, Søren

    2013-01-01

    Thin films of C60 were deposited by matrix-assisted pulsed laser evaporation (MAPLE) from a frozen target of anisole with 0.67 wt% C60. Above a fluence of 1.5 J/cm2 the C60 films are strongly non-uniform and are resulting from transfer of matrix-droplets containing fullerenes. At low fluence...... the fullerene molecules in the films are intact, the surface morphology is substantially improved and there are no measurable traces of the matrix molecules in the film. This may indicate a regime of dominant evaporation at low fluence which merges into the MAPLE regime of liquid ejection of the host matrix...

  8. Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor

    Science.gov (United States)

    Takeuchi, Wakana; Yamamoto, Kensaku; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Sigeaki

    2018-01-01

    We have investigated the effects of the N bonding structure in an AlON layer deposited by plasma-assisted atomic layer deposition (ALD) on the electrical properties of a 4H-SiC MOS structure. The properties of defects in the AlON and SiO2 layers were investigated from the capacitance–voltage and current density–voltage (J–V) characteristics of AlON/SiO2/4H-SiC MOS structures. The density of negatively charged defects in the AlON layer decreases with increasing N content. We found that the leakage current decreases with increasing N content at a low-voltage region from J–V characteristics. The bonding structure in the AlON layer was characterized by X-ray photoelectron spectroscopy. The densities of Al–N and Al–O–N bonds in the AlON layer increase with the N content. In contrast, the density of Al–NO2 bonds decreases with increasing N content. We suggest that the decrease in the defect density in the AlON layer is related to the increasing number of Al–N and Al–O–N bonds. Thus, we concluded that it is important to form Al–N and Al–ON bonds in the AlON layer while suppressing the formation of Al–NO2 bonds.

  9. Two level undercut-profile substrate-based filamentary coated conductors produced using metal organic chemical vapor deposition

    DEFF Research Database (Denmark)

    Insinga, Andrea R.; Sundaram, Aarthi; Hazelton, Drew W.

    2018-01-01

    of a filamentary CC produced in an industrial setup by SuperPower Inc. using ion beam assisted deposition and metal organic chemical vapor deposition (IBAD-MOCVD) on a 2LUPS substrate realized at the Technical University of Denmark (DTU), whereas previous studies discussed the fabrication using alternating beam...

  10. Focused ion beam-assisted technology in sub-picolitre micro-dispenser fabrication

    International Nuclear Information System (INIS)

    Lopez, M J; Campo, E M; Perez-Castillejos, R; Esteve, J; Plaza, J A; Caballero, D; Errachid, A

    2008-01-01

    Novel medical and biological applications are driving increased interest in the fabrication of micropipette or micro-dispensers. Reduced volume samples and drug dosages are prime motivators in this effort. We have combined microfabrication technology with ion beam milling techniques to successfully produce cantilever-type polysilicon micro-dispensers with 3D enclosed microchannels. The microfabrication technology described here allows for the designing of nozzles with multiple shapes. The contribution of ion beam milling has had a large impact on the fabrication process and on further customizing shapes of nozzles and inlet ports. Functionalization tests were conducted to prove the viability of ion beam-fabricated micro-dispensers. Self-assembled monolayers were successfully formed when a gold surface was patterned with a thiol solution dispensed by the fabricated micro-dispensers

  11. Laser-assisted correction of eye cornea refraction with ring-shaped laser beam

    Science.gov (United States)

    Baum, Olga; Yuzhakov, Aleksey; Omelchenko, Alexander; Bolshunov, Andrey; Siplivy, Vladimir; Sobol, Emil

    2017-07-01

    A new method for non-ablative correction of cornea shape is based on thermo-mechanical effect of laser radiation with ring-shaped laser beam. The results obtained demonstrated that the new method for correction of eye refraction yields a significant alteration in the eye refraction and the ring-shaped laser beam with various ring diameters for correction of the eye refraction allows obtaining controllable alterations of the eye refraction with axial symmetry without any pathological changes in central part of cornea.

  12. Progress in computer-assisted diagnosis and control of neutral beam lines

    International Nuclear Information System (INIS)

    Theil, E.; Elischer, V.; Fiddler, J.; Jacobs, N.J.D.; Jacobson, V.; Lawhorn, R.; Uber, D.; Wilner, D.

    1980-09-01

    This paper discusses the principles that have guided the development of a computerized diagnostic and control system for both the Neutral Beam Systems Test Facility at Lawrence Berkeley Laboratory and the Doublet III neutral beams at the General Atomic Company. The emphasis is not on the particular details of the implementation, but on general considerations which have influenced the design criteria for the system. Foremost among these are the requirements of an appropriate human interface to the system, and effective use of a relational data base. Examples are used to illustrate how these principles are carried out in practice. A systems view of diagnostic programs is suggested in the light of our experience

  13. Bulk heterojunction PCPDTBT:PC71BM organic solar cells deposited by emulsion-based, resonant infrared matrix-assisted pulsed laser evaporation

    Science.gov (United States)

    Ge, Wangyao; McCormick, Ryan D.; Nyikayaramba, Gift; Stiff-Roberts, Adrienne D.

    2014-06-01

    Organic solar cells based on poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (PCPDTBT) and [6,6]-phenyl C71 butyric acid methyl ester (PC71BM) were fabricated by emulsion-based, resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE). Two different deposition modes, namely simultaneous deposition and sequential deposition, were investigated for fabricating bulk-heterojunction organic solar cells. This work demonstrates that the RIR-MAPLE sequential deposition mode provides precise ratio control for the fabrication of bulk-heterojunction organic solar cells.

  14. Durable Silver Mirror Coating Via Ion Assisted, Electron Beam Evaporation For Large Aperture Optics, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — In the Phase I research, Surface Optics Corporation (SOC) demonstrated a durable silver mirror coating based an ion assisted, thermal evaporation process. The recipe...

  15. Thin films of thermoelectric compound Mg2Sn deposited by co-sputtering assisted by multi-dipolar microwave plasma

    International Nuclear Information System (INIS)

    Le-Quoc, H.; Lacoste, A.; Hlil, E.K.; Bes, A.; Vinh, T. Tan; Fruchart, D.; Skryabina, N.

    2011-01-01

    Highlights: → Mg 2 Sn thin films deposited by plasma co-sputtering, on silicon and glass substrates. → Formation of nano-grained polycrystalline films on substrates at room temperature. → Structural properties vary with target biasing and target-substrate distance. → Formation of the hexagonal phase of Mg 2 Sn in certain deposition conditions. → Power factor ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn films doped with ∼1 at.% Ag. - Abstract: Magnesium stannide (Mg 2 Sn) thin films doped with Ag intended for thermoelectric applications are deposited on both silicon and glass substrates at room temperature by plasma assisted co-sputtering. Characterization by scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction confirms the formation of fine-grained polycrystalline thin films with thickness of 1-3 μm. Stoichiometry, microstructure and crystal structure of thin films are found to vary with target biasing and the distance from targets to substrate. Measurements of electrical resistivity and Seebeck coefficient at room temperature show the maximum power factor of ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn thin films doped with ∼1 at.% Ag.

  16. Deposition of organic dyes for dye-sensitized solar cell by using matrix-assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Yen, Chih-Ping [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Yu, Pin-Feng [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Department of Physics, National Chung Cheng University, Chiayi 621, Taiwan (China); Wang, Jyhpyng [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Department of Physics, National Central University, Taoyuan 320, Taiwan (China); Lin, Jiunn-Yuan [Department of Physics, National Chung Cheng University, Chiayi 621, Taiwan (China); Chen, Yen-Mu [SuperbIN Co., Ltd., Taipei 114, Taiwan (China); Chen, Szu-yuan, E-mail: sychen@ltl.iams.sinica.edu.tw [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Department of Physics, National Central University, Taoyuan 320, Taiwan (China)

    2016-08-15

    The deposition of various distinct organic dyes, including ruthenium complex N3, melanin nanoparticle (MNP), and porphyrin-based donor-π-acceptor dye YD2-o-C8, by using matrix-assisted pulsed laser evaporation (MAPLE) for application to dye-sensitized solar cell (DSSC) is investigated systematically. It is found that the two covalently-bonded organic molecules, i.e., MNP and YD2-o-C8, can be transferred from the frozen target to the substrate with maintained molecular integrity. In contrast, N3 disintegrates in the process, presumably due to the lower bonding strength of metal complex compared to covalent bond. With the method, DSSC using YD2-o-C8 is fabricated, and an energy conversion efficiency of 1.47% is attained. The issue of the low penetration depth of dyes deposited by MAPLE and the possible resolution to it are studied. This work demonstrates that MAPLE could be an alternative way for deposition of organic dyes for DSSC.

  17. Deposition of organic dyes for dye-sensitized solar cell by using matrix-assisted pulsed laser evaporation

    Directory of Open Access Journals (Sweden)

    Chih-Ping Yen

    2016-08-01

    Full Text Available The deposition of various distinct organic dyes, including ruthenium complex N3, melanin nanoparticle (MNP, and porphyrin-based donor-π-acceptor dye YD2-o-C8, by using matrix-assisted pulsed laser evaporation (MAPLE for application to dye-sensitized solar cell (DSSC is investigated systematically. It is found that the two covalently-bonded organic molecules, i.e., MNP and YD2-o-C8, can be transferred from the frozen target to the substrate with maintained molecular integrity. In contrast, N3 disintegrates in the process, presumably due to the lower bonding strength of metal complex compared to covalent bond. With the method, DSSC using YD2-o-C8 is fabricated, and an energy conversion efficiency of 1.47% is attained. The issue of the low penetration depth of dyes deposited by MAPLE and the possible resolution to it are studied. This work demonstrates that MAPLE could be an alternative way for deposition of organic dyes for DSSC.

  18. Microwave-assisted nonaqueous sol-gel deposition of different spinel ferrites and barium titanate perovskite thin films.

    Science.gov (United States)

    Kubli, Martin; Luo, Li; Bilecka, Idalia; Niederberger, Markus

    2010-01-01

    Rapid and selective heating of solvents by microwave irradiation coupled to nonaqueous sol-gel chemistry makes it possible to simultaneously synthesize metal oxide nanoparticles within minutes and deposit them on substrates. The simple immersion of substrates, such as glass slides, in the reaction solution results after microwave heating in the deposition of homogeneous porous thin films whose thickness can be adjusted through the precursor concentration. Here we use such a microwave-assisted nonaqueous sol-gel process for the formation of various spinel ferrite MFe2O4 (M = Fe, Co, Mn, Ni) and BaTiO3 nanoparticles and their deposition as thin films. The approach offers high flexibility with respect to controlling the crystal size by adjusting the reaction time and/or temperature. Based on the example of CoFe2O4 nanoparticles, we show how the crystal size can carefully be tuned from 4 to 8 nm, resulting in a continuous change of the magnetic properties.

  19. Adjusting the chlorhexidine content of calcium phosphate coatings by electrochemically assisted co-deposition from aqueous solutions.

    Science.gov (United States)

    Scharnweber, D; Flössel, M; Born, R; Worch, H

    2007-02-01

    Currently, a number of strategies to create either biologically active or antimicrobial surfaces of biomaterials are being developed and commercially applied. However, for metallic implants in contact with bone, both osteomyelitis and a fast and stable long-term fixation of implants are challenges to be overcome, especially in the case of bad bone quality. Therefore, the present work aims to develop compound coatings of calcium phosphate phases (CPP) and chlorhexidine (CHD) that combine bioactive properties with a strategy to prevent initial bacterial adhesion and thus offer a possible solution to the two major problems of implant surgery mentioned above. Using electrochemically assisted deposition of CPP on samples of Ti6Al4V together with the pH-dependent solubility of CHD, the preparation of coatings with a wide range of CHD concentrations (150 ng/cm(2) to 65 microg/cm(2)) from electrolytes with CHD concentrations between 50 and 200 microM was possible, thus allowing the adaptation of implant surface properties to different surgical and patient situations. Detailed SEM and FTIR analysis showed that coatings are formed by a co-deposition process of both phases and that CHD interacts with the deposition and transformation of CPP in the coating. For high CHD contents, coatings consist of CHD crystals coated by nano-crystalline hydroxyapatite.

  20. Vibration-Assisted Convective Deposition of Binary Suspensions for Structured Coatings

    Science.gov (United States)

    Kaewpetch, Thitiporn

    There are many applications for thin films of ordered particles including membranes, microlens arrays, and structure-color coatings. Convective deposition, a process that uses evaporation-driven flow in a thin liquid film to order particles, is a relatively fast and scalable method of making such films. Recently, it was shown that using lateral vibration in the direction of coating can enhance this process. This work focuses on depositing well-ordered monolayers of a binary suspension of microspheres and nanoparticles to understand the effect of the process parameters on the final distribution of particles. In order to investigate the deposited morphology of binary suspensions, various concentrations of nanoparticles were deposited on the substrate at 50 Hz frequency and a range of vibration amplitudes. The result was for all concentrations, the deposition rate and the range of speed for monolayers tend to increase with amplitude of vibration. The overall quality of the thin films is more uniform; the stripes are rarely seen. However, areas exist where microspheres were not surrounded by nanoparticles, and this inhomogeneity increases with higher amplitude vibration. To analyze the non-uniformity of deposition, samples were imaged using confocal laser scanning microscopy and particle-level image analysis. The particle coverage, the intensity of segregation, the distribution of number of nearest neighbored particles of microsphere and local area of particles were characterized. At low amplitude, the nanoparticle coverage is higher and has small deviation over large sample areas. As expected, each microsphere on average has 6 nearest neighbored (NN) particles and a relatively uniform local area distribution for uniform, well-ordered particle coatings. On the other hand, when the coverage has many defects due to vibration, the average number of NN particles tends to decrease which can also be described by the a decrease in the distribution of local areas. Even though

  1. Assisted deposition of nano-hydroxyapatite onto exfoliated carbon nanotube oxide scaffolds

    Science.gov (United States)

    Zanin, H.; Rosa, C. M. R.; Eliaz, N.; May, P. W.; Marciano, F. R.; Lobo, A. O.

    2015-05-01

    Electrodeposited nano-hydroxyapatite (nHAp) is more similar to biological apatite in terms of microstructure and dimension than apatites prepared by other processes. Reinforcement with carbon nanotubes (CNTs) enhances its mechanical properties and increases adhesion of osteoblasts. Here, we carefully studied nHAp deposited onto vertically aligned multi-walled CNT (VAMWCNT) scaffolds by electrodeposition and soaking in a simulated body fluid (SBF). VAMWCNTs are porous biocompatible scaffolds with nanometric porosity and exceptional mechanical and chemical properties. The VAMWCNT films were prepared on a Ti substrate by a microwave plasma chemical vapour deposition method, and then oxidized and exfoliated by oxygen plasma etching (OPE) to produce graphene oxide (GO) at the VAMWCNT tips. The attachment of oxygen functional groups was found to be crucial for nHAp nucleation during electrodeposition. A thin layer of plate-like and needle-like nHAp with high crystallinity was formed without any need for thermal treatment. This composite (henceforth referred to as nHAp-VAMWCNT-GO) served as the scaffold for in vitro biomineralization when soaked in the SBF, resulting in the formation of both carbonate-rich and carbonate-poor globular-like nHAp. Different steps in the deposition of biological apatite onto VAMWCNT-GO and during the short-term biomineralization process were analysed. Due to their unique structure and properties, such nano-bio-composites may become useful in accelerating in vivo bone regeneration processes.

  2. Electroless deposition of metal nanoparticles on graphene with substrate-assisted techniques

    Science.gov (United States)

    Zaniewski, Anna M.; Trimble, Christie J.; Meeks, Veronica; Nemanich, Robert J.

    2015-03-01

    We present the electroless reduction of solution-based metal ions for nanoparticle deposition on a variety of substrates. The substrates include graphene-coated metals, insulators, doped semiconductors, and patterned ferroelectrics. We find that the metal ions are spontaneously reduced on a wide variety of graphene substrates, and the substrates play a large role in the nanoparticle coverage. For example, the reduction of gold chloride to gold nanoparticles on graphene/lithium niobate results in 3% nanoparticle coverage compared to 20% coverage on graphene/silicon and 60% on graphene/copper. Given that the work function of graphene is approximately 4.4eV, the Fermi level is -0.1 V vs the normal hydrogen electrode (NHE). Since the reduction potential of gold chloride is +1.002 V, the spontaneous transfer of electrons from the graphene to the metal ion is energetically favorable. However, we find substrates with similar work functions nevertheless result in varied deposition rates, which we attribute to electron availability. We also find that patterned ferrolectrics can be used as a template for patterned nanoparticle deposition, with and without graphene. This work is supported by the National Science Foundation under Grant # DMR-1206935.

  3. Numerical simulations of energy deposition caused by 50 MeV—50 TeV proton beams in copper and graphite targets

    CERN Document Server

    Nie, Y; Chetvertkova, V; Rosell-Tarrago, G; Burkart, F; Wollmann, D

    2017-01-01

    The conceptual design of the Future Circular Collider (FCC) is being carried out actively in an international collaboration hosted by CERN, for the post–Large Hadron Collider (LHC) era. The target center-of-mass energy of proton-proton collisions for the FCC is 100 TeV, nearly an order of magnitude higher than for LHC. The existing CERN accelerators will be used to prepare the beams for FCC. Concerning beam-related machine protection of the whole accelerator chain, it is critical to assess the consequences of beam impact on various accelerator components in the cases of controlled and uncontrolled beam losses. In this paper, we study the energy deposition of protons in solid copper and graphite targets, since the two materials are widely used in magnets, beam screens, collimators, and beam absorbers. Nominal injection and extraction energies in the hadron accelerator complex at CERN were selected in the range of 50 MeV–50 TeV. Three beam sizes were studied for each energy, corresponding to typical values ...

  4. Magnetic properties of optimized cobalt nanospheres grown by focused electron beam induced deposition (FEBID on cantilever tips

    Directory of Open Access Journals (Sweden)

    Soraya Sangiao

    2017-10-01

    Full Text Available In this work, we present a detailed investigation of the magnetic properties of cobalt nanospheres grown on cantilever tips by focused electron beam induced deposition (FEBID. The cantilevers are extremely soft and the cobalt nanospheres are optimized for magnetic resonance force microscopy (MRFM experiments, which implies that the cobalt nanospheres must be as small as possible while bearing high saturation magnetization. It was found that the cobalt content and the corresponding saturation magnetization of the nanospheres decrease for nanosphere diameters less than 300 nm. Electron holography measurements show the formation of a magnetic vortex state in remanence, which nicely agrees with magnetic hysteresis loops performed by local magnetometry showing negligible remanent magnetization. As investigated by local magnetometry, optimal behavior for high-resolution MRFM has been found for cobalt nanospheres with a diameter of ≈200 nm, which present atomic cobalt content of ≈83 atom % and saturation magnetization of 106 A/m, around 70% of the bulk value. These results represent the first comprehensive investigation of the magnetic properties of cobalt nanospheres grown by FEBID for application in MRFM.

  5. Exploring the Optical and Morphological Properties of Ag and Ag/TiO₂ Nanocomposites Grown by Supersonic Cluster Beam Deposition.

    Science.gov (United States)

    Cavaliere, Emanuele; Benetti, Giulio; Van Bael, Margriet; Winckelmans, Naomi; Bals, Sara; Gavioli, Luca

    2017-12-13

    Nanocomposite systems and nanoparticle (NP) films are crucial for many applications and research fields. The structure-properties correlation raises complex questions due to the collective structure of these systems, often granular and porous, a crucial factor impacting their effectiveness and performance. In this framework, we investigate the optical and morphological properties of Ag nanoparticles (NPs) films and of Ag NPs/TiO₂ porous matrix films, one-step grown by supersonic cluster beam deposition. Morphology and structure of the Ag NPs film and of the Ag/TiO₂ (Ag/Ti 50-50) nanocomposite are related to the optical properties of the film employing spectroscopic ellipsometry (SE). We employ a simple Bruggeman effective medium approximation model, corrected by finite size effects of the nano-objects in the film structure to gather information on the structure and morphology of the nanocomposites, in particular porosity and average NPs size for the Ag/TiO₂ NP film. Our results suggest that SE is a simple, quick and effective method to measure porosity of nanoscale films and systems, where standard methods for measuring pore sizes might not be applicable.

  6. Methods for assisting recovery of damaged brain and spinal cord and treating various diseases using arrays of x-ray microplanar beams

    Energy Technology Data Exchange (ETDEWEB)

    Dilmanian, F Avraham [Yaphank, NY; Anchel, David J [Rocky Point, NY; Gaudette, Glenn [Holden, MA; Romanelli, Pantaleo [Monteroduni, IT; Hainfeld, James [Shoreham, NY

    2010-06-29

    A method of assisting recovery of an injury site of the central nervous system (CNS) or treating a disease includes providing a therapeutic dose of X-ray radiation to a target volume through an array of parallel microplanar beams. The dose to treat CNS injury temporarily removes regeneration inhibitors from the irradiated site. Substantially unirradiated cells surviving between beams migrate to the in-beam portion and assist recovery. The dose may be staggered in fractions over sessions using angle-variable intersecting microbeam arrays (AVIMA). Additional doses are administered by varying the orientation of the beams. The method is enhanced by injecting stem cells into the injury site. One array or the AVIMA method is applied to ablate selected cells in a target volume associated with disease for palliative or curative effect. Atrial fibrillation is treated by irradiating the atrial wall to destroy myocardial cells while continuously rotating the subject.

  7. Progress in computer-assisted diagnosis and control of neutral beam lines

    International Nuclear Information System (INIS)

    Theil, E.; Elischer, V.; Fiddler, J.; Jacobs, N.J.D.; Jacobson, V.; Lawhorn, R.; Uber, D.; Wilner, D.

    1981-01-01

    This paper discusses the principles that have guided the development of a computerized diagnostic and control system for both the Neutral Beam Systems Test Facility at Lawrence Berkeley Laboratory and the Doublet III neutral beams at the General Atomic Company. The emphasis is not on the particular details of the implementation, but on general considerations which have influenced the design criteria for the system. Foremost among these are the requirements of an appropriate human interface to the system, and effective use of a relational data base. Examples are used to illustrate how these principles are carried out in practice. A systems view of diagnostic programs is suggested in the light of our experience. (author)

  8. Nanoparticle and nanorod films deposited by matrix assisted pulsed laser evaporation

    Science.gov (United States)

    Caricato, A. P.; Cesaria, M.; Luches, A.; Martino, M.

    2012-07-01

    The promising results obtained with the MAPLE-deposition of nanostructured thin films, to be used in different fields, are reviewed. Nanoparticles (TiO2, SnO2, CdS) and nanorods (TiO2) with well defined dimensions were suspended in appropriate solvents (distilled water, toluene) with low concentration (1wt% or less). The solutions were flash frozen at the liquid nitrogen temperature to form the targets to be laser irradiated. The MAPLE process allowed a successful transfer from the target to rough and flat substrates, preserving the starting composition and crystalline phase of the nanostructures in a wide range of experimental conditions. In contrast, a careful choice of the laser fluence is mandatory to avoid shape modifications. Growth of metal nanoparticles with a low dispersion in size was also obtained by the MAPLE technique, starting from target solutions of a metallorganic element (AcPd) diluted in different solvents (acetone, diethyl ether). It seems that selecting the solvent with appropriate values of viscosity and boiling temperatures, it is possible to modulate the nanoparticles size. Most of the deposited nanostructured films were tested as sensing elements for gas sensors.

  9. In-situ photo-assisted deposition of silver particles on hydrogel fibers for antibacterial applications

    International Nuclear Information System (INIS)

    Raho, Riccardo; Paladini, Federica; Lombardi, Fiorella Anna; Boccarella, Sandro; Zunino, Benedetta; Pollini, Mauro

    2015-01-01

    Silver nanoparticles (AgNPs) have attracted intensive research interest and have been recently incorporated in polymers, medical devices, hydrogels and burn dressings to control the proliferation of microorganisms. In this study a novel silver antibacterial coating was deposited for the first time on hydrogel fibers through an in-situ photo-chemical reaction. Hydrogel blends obtained by mixing different percentages of silver-treated and untreated fibers were characterized by thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). Four different fluids, such as phosphate buffered saline (PBS), simulated body fluid (SBF), chemical simulated wound fluid (cSWF), and deionized water (DI water), were used for evaluating the swelling properties. The results obtained confirmed that the presence of silver did not affect the properties of the hydrogel. Moreover, the results obtained through inductively coupled plasma mass spectrometry (ICP-MS) demonstrated very low silver release values, thus indicating the perfect adhesion of the silver coating to the substrate. Good antibacterial capabilities were demonstrated by any hydrogel blend on Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) through agar diffusion tests and optical density readings. - Highlights: • An innovative nano-silver deposition technique was adopted on hydrogel fibers. • Antibacterial effects was verified by agar diffusion and optical density tests. • The swelling properties were investigated using 4 different fluids. • Hydrogel blends with different percentages of silver-treated fibers were compared

  10. In-situ photo-assisted deposition of silver particles on hydrogel fibers for antibacterial applications

    Energy Technology Data Exchange (ETDEWEB)

    Raho, Riccardo [Department of Engineering for Innovation, University of Salento, Via per Monteroni, 73100 Lecce (Italy); CBN, Center for Biomolecular Nanotechnologies, Fondazione Istituto Italiano di Tecnologia, Via Barsanti, 73010 Arnesano, Lecce (Italy); Paladini, Federica; Lombardi, Fiorella Anna [Department of Engineering for Innovation, University of Salento, Via per Monteroni, 73100 Lecce (Italy); Boccarella, Sandro [Megatex S.p.A., Via Cima D' Aosta, 73040 Melissano, Lecce (Italy); Zunino, Benedetta [Università Cattolica del Sacro Cuore, Largo Francesco Vito 1, 00198 Roma (Italy); Pollini, Mauro, E-mail: mauro.pollini@unisalento.it [Department of Engineering for Innovation, University of Salento, Via per Monteroni, 73100 Lecce (Italy); Silvertech Ltd., Via per Monteroni, 73100 Lecce (Italy)

    2015-10-01

    Silver nanoparticles (AgNPs) have attracted intensive research interest and have been recently incorporated in polymers, medical devices, hydrogels and burn dressings to control the proliferation of microorganisms. In this study a novel silver antibacterial coating was deposited for the first time on hydrogel fibers through an in-situ photo-chemical reaction. Hydrogel blends obtained by mixing different percentages of silver-treated and untreated fibers were characterized by thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). Four different fluids, such as phosphate buffered saline (PBS), simulated body fluid (SBF), chemical simulated wound fluid (cSWF), and deionized water (DI water), were used for evaluating the swelling properties. The results obtained confirmed that the presence of silver did not affect the properties of the hydrogel. Moreover, the results obtained through inductively coupled plasma mass spectrometry (ICP-MS) demonstrated very low silver release values, thus indicating the perfect adhesion of the silver coating to the substrate. Good antibacterial capabilities were demonstrated by any hydrogel blend on Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) through agar diffusion tests and optical density readings. - Highlights: • An innovative nano-silver deposition technique was adopted on hydrogel fibers. • Antibacterial effects was verified by agar diffusion and optical density tests. • The swelling properties were investigated using 4 different fluids. • Hydrogel blends with different percentages of silver-treated fibers were compared.

  11. Atomic-layer-deposition-assisted formation of carbon nanoflakes on metal oxides and energy storage application.

    Science.gov (United States)

    Guan, Cao; Zeng, Zhiyuan; Li, Xianglin; Cao, Xiehong; Fan, Yu; Xia, Xinhui; Pan, Guoxiang; Zhang, Hua; Fan, Hong Jin

    2014-01-29

    Nanostructured carbon is widely used in energy storage devices (e.g., Li-ion and Li-air batteries and supercapacitors). A new method is developed for the generation of carbon nanoflakes on various metal oxide nanostructures by combining atomic layer deposition (ALD) and glucose carbonization. Various metal oxide@nanoflake carbon (MO@f-C) core-branch nanostructures are obtained. For the mechanism, it is proposed that the ALD Al2 O3 and glucose form a composite layer. Upon thermal annealing, the composite layer becomes fragmented and moves outward, accompanied by carbon deposition on the alumina skeleton. When tested as electrochemical supercapacitor electrode, the hierarchical MO@f-C nanostructures exhibit better properties compared with the pristine metal oxides or the carbon coating without ALD. The enhancement can be ascribed to increased specific surface areas and electric conductivity due to the carbon flake coating. This peculiar carbon coating method with the unique hierarchical nanostructure may provide a new insight into the preparation of 'oxides + carbon' hybrid electrode materials for energy storage applications. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Characterization and modeling of tungsten nanoparticles generated by laser-assisted chemical vapor deposition

    International Nuclear Information System (INIS)

    Landstroem, L.; Kokavecz, J.; Lu, J.; Heszler, P.

    2004-01-01

    Tungsten nanoparticles were generated by photolytical (UV) laser-activated chemical vapor deposition from WF 6 /H 2 /Ar gas mixture. Emission spectroscopy of thermal radiation allowed temperature determination of the nanoparticles while varying the laser fluence. A model including known cooling mechanisms was used to calculate the laser-induced temperature as a function of time and laser fluence, where the only fitting parameter was the absorption efficiency of the particles, obtained from measured temperatures. Size decrease of the particles due to evaporation was modeled at different laser fluences, and connected to size-distribution measurements from transmission electron microscopy micrographs, where a maximum geometric mean diameter (for the experimental conditions used) of 10 nm was observed at a laser fluence of ∼120 mJ/cm2. Measurements and the model calculations showed that the laser-excited particles reached the melting temperature of tungsten at ∼95 mJ/cm2. Above ∼130 mJ/cm2, very high rates of evaporation of W atoms were found, resulting in a decrease in size of the deposited particles. Crystalline, metastable β-W nanoparticles were found above ∼100 mJ/cm2 by both electron and x-ray diffraction. Below fluences of ∼100 mJ/cm2, i.e., corresponding to the value necessary for melting, amorphous nanoparticles were obtained

  13. Numerical simulations of energy deposition caused by 50 MeV—50 TeV proton beams in copper and graphite targets

    Directory of Open Access Journals (Sweden)

    Y. Nie

    2017-08-01

    Full Text Available The conceptual design of the Future Circular Collider (FCC is being carried out actively in an international collaboration hosted by CERN, for the post–Large Hadron Collider (LHC era. The target center-of-mass energy of proton-proton collisions for the FCC is 100 TeV, nearly an order of magnitude higher than for LHC. The existing CERN accelerators will be used to prepare the beams for FCC. Concerning beam-related machine protection of the whole accelerator chain, it is critical to assess the consequences of beam impact on various accelerator components in the cases of controlled and uncontrolled beam losses. In this paper, we study the energy deposition of protons in solid copper and graphite targets, since the two materials are widely used in magnets, beam screens, collimators, and beam absorbers. Nominal injection and extraction energies in the hadron accelerator complex at CERN were selected in the range of 50 MeV–50 TeV. Three beam sizes were studied for each energy, corresponding to typical values of the betatron function. Specifically for thin targets, comparisons between fluka simulations and analytical Bethe equation calculations were carried out, which showed that the damage potential of a few-millimeter-thick graphite target and submillimeter-thick copper foil can be well estimated directly by the Bethe equation. The paper provides a valuable reference for the quick evaluation of potential damage to accelerator elements over a large range of beam parameters when beam loss occurs.

  14. ZnTe-ZnO core-shell radial heterostructures grown by the combination of molecular beam epitaxy and atomic layer deposition.

    Science.gov (United States)

    Janik, E; Wachnicka, A; Guziewicz, E; Godlewski, M; Kret, S; Zaleszczyk, W; Dynowska, E; Presz, A; Karczewski, G; Wojtowicz, T

    2010-01-08

    ZnTe-ZnO core-shell radial heterostructures were grown using a new method of combining molecular beam epitaxy (MBE) and atomic layer deposition (ALD). Zinc telluride nanowires (core) were grown on a GaAs substrate using gold catalyzed vapor-liquid-solid mechanism. An atomic layer deposition technique using diethyl zinc and deionized water as precursors was applied for zinc oxide shell formation. The core-shell ZnTe-ZnO heterostructures thus obtained were characterized by scanning electron microscopy, transmission electron microscopy, x-ray diffraction and photoluminescence measurements.

  15. Properties of Erbium Doped Hydrogenated Amorphous Carbon Layers Fabricated by Sputtering and Plasma Assisted Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    V. Prajzler

    2008-01-01

    Full Text Available We report about properties of carbon layers doped with Er3+ ions fabricated by Plasma Assisted Chemical Vapor Deposition (PACVD and by sputtering on silicon or glass substrates. The structure of the samples was characterized by X-ray diffraction and their composition was determined by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The Absorbance spectrum was taken in the spectral range from 400 nm to 600 nm. Photoluminescence spectra were obtained using two types of Ar laser (λex=514.5 nm, lex=488 nm and also using a semiconductor laser (λex=980 nm. Samples fabricated by magnetron sputtering exhibited typical emission at 1530 nm when pumped at 514.5 nm. 

  16. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    International Nuclear Information System (INIS)

    Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-01

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

  17. Coating synthesis on dielectric substrates assisted by pulsed beams of high-energy gas atoms

    Science.gov (United States)

    Grigoriev, S. N.; Melnik, Yu A.; Metel, A. S.

    2017-05-01

    Titanium nitride and aluminum nitride coatings have been deposited on glass and aluminum oxide substrates in a flow of metal atoms accompanied by high-energy gas atoms. The metal atoms are produced due to sputtering of a flat rectangular magnetron target. The gas atoms with energy up to 25 keV are produced due to charge exchange collisions of ions extracted from the magnetron discharge plasma and accelerated by high-voltage pulses applied to a flat grid parallel to the target. The metal atoms pass through the grid and deposit on the substrate. Conjunction of their trajectories with those of gas atoms bombarding the growing coating enables the coating synthesis on complex-shape dielectric products planetary rotating inside the vacuum chamber. Mixing high-energy gas atoms of the coating and substrate atoms substantially improves the coating adhesion.

  18. The effects of plasma-assisted chemical vapor deposition process variables on the properties of amorphous silicon carbide films

    Science.gov (United States)

    Moskowitz, Illa Lorren

    Amorphous hydrogenated carbon films containing silicon are of considerable interest for a variety of applications including window layers for solar cells, anti-abrasion coatings, masks for x-ray photolithography and biomedical applications. Plasma-assisted chemical vapor deposition (PACVD) is one of the preferred techniques for depositing these films. a-Si:C:H films were deposited by PACVD using a plasma reactor with capacitively coupled parallel plate configuration operating at 13.56 MHz. The following film properties were studied: intrinsic stress (from the curvature of the substrates), micro-hardness (obtained from nanoindentation), surface roughness and morphology (studied using atomic force microscopy), surface energy (obtained from wetting angle measurements) and the optical constants of the films (as obtained from computer modeling of ellipsometric data). The composition of the films was established from Rutherford backscattering experiments and the hydrogen content was measured using nuclear reaction analysis. By investigating the process variables of the PACVD system using a 2-level factorial experimental design, a better understanding of this complex deposition process has been gained. From this study some of the relationships between the process variables of the PACVD system and physical characteristics of the deposited films such as surface roughness, film stress and optical properties have been established. For example, increasing the energy of bombarding ions produced an increase in the surface roughness under certain conditions, but produced a decrease in roughness under other conditions. In another case, changing the composition of the source gas produced a significant change in the refractive index of the films when the ion energy was high, but had little effect when the ion energy was low. Values obtained for the surface roughness of the films and the dispersion functions of n and k obtained from the ellipsometric modeling were in general

  19. Energy deposition evaluation for ultra-low energy electron beam irradiation systems using calibrated thin radiochromic film and Monte Carlo simulations

    International Nuclear Information System (INIS)

    Matsui, S.; Mori, Y.; Nonaka, T.; Hattori, T.; Kasamatsu, Y.; Haraguchi, D.; Watanabe, Y.; Uchiyama, K.; Ishikawa, M.

    2016-01-01

    For evaluation of on-site dosimetry and process design in industrial use of ultra-low energy electron beam (ULEB) processes, we evaluate the energy deposition using a thin radiochromic film and a Monte Carlo simulation. The response of film dosimeter was calibrated using a high energy electron beam with an acceleration voltage of 2 MV and alanine dosimeters with uncertainty of 11% at coverage factor 2. Using this response function, the results of absorbed dose measurements for ULEB were evaluated from 10 kGy to 100 kGy as a relative dose. The deviation between the responses of deposit energy on the films and Monte Carlo simulations was within 15%. As far as this limitation, relative dose estimation using thin film dosimeters with response function obtained by high energy electron irradiation and simulation results is effective for ULEB irradiation processes management.

  20. Energy deposition evaluation for ultra-low energy electron beam irradiation systems using calibrated thin radiochromic film and Monte Carlo simulations

    Energy Technology Data Exchange (ETDEWEB)

    Matsui, S., E-mail: smatsui@gpi.ac.jp; Mori, Y. [The Graduate School for the Creation of New Photonics Industries, 1955-1 Kurematsucho, Nishiku, Hamamatsu, Shizuoka 431-1202 (Japan); Nonaka, T.; Hattori, T.; Kasamatsu, Y.; Haraguchi, D.; Watanabe, Y.; Uchiyama, K.; Ishikawa, M. [Hamamatsu Photonics K.K. Electron Tube Division, 314-5 Shimokanzo, Iwata, Shizuoka 438-0193 (Japan)

    2016-05-15

    For evaluation of on-site dosimetry and process design in industrial use of ultra-low energy electron beam (ULEB) processes, we evaluate the energy deposition using a thin radiochromic film and a Monte Carlo simulation. The response of film dosimeter was calibrated using a high energy electron beam with an acceleration voltage of 2 MV and alanine dosimeters with uncertainty of 11% at coverage factor 2. Using this response function, the results of absorbed dose measurements for ULEB were evaluated from 10 kGy to 100 kGy as a relative dose. The deviation between the responses of deposit energy on the films and Monte Carlo simulations was within 15%. As far as this limitation, relative dose estimation using thin film dosimeters with response function obtained by high energy electron irradiation and simulation results is effective for ULEB irradiation processes management.

  1. Structural and Mechanical Properties of CrNx Coatings Deposited by Medium-Frequency Magnetron Sputtering with and without Ion Source Assistance

    International Nuclear Information System (INIS)

    Tian, C.X.; He, J.; Wang, H.J.; Fu, D.J.; Yang, B.

    2011-01-01

    CrNx coatings were deposited on Si (100) and WC-Co substrates by a home-made medium-frequency magnetron sputtering system with and without thermal filament ion source assistance. The structure and composition of the coatings were characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. The mechanical and tribological properties were assessed by microhardness and pin-on-disc testing. The ion source-assisted system showed a deposition rate of 3.88 μm/h, much higher than the value 2.2 μm/h without ion source assistance. The CrNx coatings prepared with ion source assistance exhibited an increase in microhardness (up to 16.3 GPa) and a decrease in friction coefficient (down to 0.48) at the optimized cathode source-to-substrate distance.

  2. Evaluation of the Energy Deposition in the event of an Asynchronous Beam Dump for a 7 TeV beam on the new TCDQ model proposed for the LHC

    CERN Document Server

    Versaci, R; CERN. Geneva. ATS Department

    2012-01-01

    An asynchronous beam dump is one of the most critical accident the LHC could face. In the effort to have a better protection of the machine, a new model for the TCDQ (Target Collimator Dump Quadrupole) has been proposed and is under evaluation. Within this frame we have performed FLUKA evaluation of the energy deposition. The results of our simulations are also input for the evaluation of the heat load on the collimator.

  3. Failure Strain and Strain-Stress Analysis in Titanium Nitride Coatings Deposited on Religa Heart Ext Ventricular Assist Device

    Directory of Open Access Journals (Sweden)

    Kopernik M.

    2015-04-01

    Full Text Available The Polish ventricular assist device is made of Bionate II with deposited TiN biocompatible nano-coating. The two scale finite element model is composed of a macro-model of blood chamber and a micro-model of the TiN/Bionate II. The numerical analysis of stress and strain states confirmed the possibility of fracture. Therefore, the identification of a fracture parameter considered as a failure strain is the purpose of the present work. The tensile test in a micro chamber of the SEM was performed to calibrate the fracture parameter of the material system TiN/Bionate II. The failure strain is a function of a temperature, a thickness of coating and parameters of surface's profile. The failure strain was calculated at the stage of the test, in which the initiation of fracture occurred. The finite element micro-model includes the surface roughness and the failure strain under tension condition for two thicknesses of coatings which will be deposited on the medical device.

  4. VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Dong Zhang

    2017-03-01

    Full Text Available Vanadium dioxide (VO2 thermochromic thin films with various thicknesses were grown on quartz glass substrates by radio frequency (RF-plasma assisted oxide molecular beam epitaxy (O-MBE. The crystal structure, morphology and chemical stoichiometry were investigated systemically by X-ray diffraction (XRD, atomic force microscopy (AFM, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS analyses. An excellent reversible metal-to-insulator transition (MIT characteristics accompanied by an abrupt change in both electrical resistivity and optical infrared (IR transmittance was observed from the optimized sample. Remarkably, the transition temperature (TMIT deduced from the resistivity-temperature curve was reasonably consistent with that obtained from the temperature-dependent IR transmittance. Based on Raman measurement and XPS analyses, the observations were interpreted in terms of residual stresses and chemical stoichiometry. This achievement will be of great benefit for practical application of VO2-based smart windows.

  5. UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    W. Kong

    2017-03-01

    Full Text Available A high Al-content (y > 0.4 multi-quantum-well (MQW structure with a quaternary InxAlyGa(1-x-yN active layer was synthesized using plasma-assisted molecular beam epitaxy. The MQW structure exhibits strong carrier confinement and room temperature ultraviolet-B (UVB photoluminescence an order of magnitude stronger than that of a reference InxAlyGa(1-x-yN thin film with comparable composition and thickness. The samples were characterized using spectroscopic ellipsometry, atomic force microscopy, and high-resolution X-ray diffraction. Numerical simulations suggest that the UVB emission efficiency is limited by dislocation-related non-radiative recombination centers in the MQW and at the MQW - buffer interface. Emission efficiency can be significantly improved by reducing the dislocation density from 109cm−2 to 107cm−2 and by optimizing the width and depth of the quantum wells.

  6. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kong, W., E-mail: wei.kong@duke.edu; Jiao, W. Y.; Kim, T. H.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Roberts, A. T. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Fournelle, J. [Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States); Losurdo, M. [CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari (Italy); Everitt, H. O. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2015-09-28

    Thin films of the wide bandgap quaternary semiconductor In{sub x}Al{sub y}Ga{sub (1−x−y)}N with low In (x = 0.01–0.05) and high Al composition (y = 0.40–0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280 nm–320 nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.

  7. Formation behavior of BexZn1−xO alloys grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Chen, Mingming; Zhu, Yuan; Su, Longxing; Zhang, Quanlin; Chen, Anqi; Ji, Xu; Xiang, Rong; Gui, Xuchun; Wu, Tianzhun; Pan, Bicai; Tang, Zikang

    2013-01-01

    We report the phase formation behavior of Be x Zn 1−x O alloys grown by plasma-assisted molecular beam epitaxy. We find the alloy with low- and high-Be contents could be obtained by alloying BeO into ZnO films. X-ray diffraction measurements shows the c lattice constant value shrinks, and room temperature absorption shows the energy band-gap widens after Be incorporated. However, the alloy with intermediate Be composition are unstable and segregated into low- and high-Be contents BeZnO alloys. We demonstrate the phase segregation of Be x Zn 1−x O alloys with intermediate Be composition resulted from large internal strain induced by large lattice mismatch between BeO and ZnO.

  8. Masking considerations in chemically assisted ion beam etching of GaAs/AlGaAs laser structures

    International Nuclear Information System (INIS)

    Behfar-Rad, A.; Wong, S.S.; Davis, R.J.; Wolf, E.D.; Cornell Univ., Ithaca, NY

    1989-01-01

    The use of photoresist, Cr, and SiO 2 as etch masks for GaAs/AlGaAs structures in chemically assisted ion beam etching is reported. The optimized etch with a photoresist mask results in a high degree of anisotropy and smooth sidewalls. However, the etched surface contains undesirable features. The etch with a Cr mask is also highly anisotropic, and the etched surface is free of features. The drawback with Cr masks is that the sidewalls are rough. Vertical and smooth sidewalls as well as a featureless surface are obtained with a SiO 2 mask. The SiO 2 mask has been employed to etch the facets of monolithic GaAs/AlGaAs-based laser structures

  9. Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Brown, April [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

    2006-06-15

    The growth of GaN by plasma assisted molecular beam epitaxy on GaN template substrates (GaN on sapphire) is investigated with in-situ multi-channel spectroscopic ellipsometry. Growth is performed under various Ga/N flux ratios at growth temperatures in the range 710-780 C. The thermal roughening of the GaN template caused by decomposition of the surface is investigated through the temporal variation of the GaN pseudodielectric function over the temperature range of 650 C to 850 C. The structural, morphological, and optical properties are also discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Skierbiszewski, Czeslaw; Muziol, Grzegorz; Nowakowski-Szkudlarek, Krzesimir; Turski, Henryk; Siekacz, Marcin; Feduniewicz-Zmuda, Anna; Nowakowska-Szkudlarek, Anna; Sawicka, Marta; Perlin, Piotr

    2018-03-01

    We demonstrate true-blue 450 nm tunnel junction (TJ) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy (PAMBE). The absence of hydrogen during PAMBE growth allows us to achieve TJs with low resistance. We compare TJ LDs with LDs of standard construction with p-type metal contact. For both types of LD, the threshold current density is around 3 kA/cm2 and the slope efficiency is 0.5 W/A. We do not observe any significant changes in optical losses and differential gain in TJ LDs compared with standard LDs. The differential resistivity of the TJs for current densities higher than 2 kA/cm2 is below 10‑4 Ω·cm2.

  11. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  12. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  13. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    International Nuclear Information System (INIS)

    Ozcan, Ahmet S.; Lavoie, Christian; Jordan-Sweet, Jean; Alptekin, Emre; Zhu, Frank; Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M.

    2016-01-01

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  14. Organic electro-optic thin films by simultaneous vacuum deposition and laser-assisted poling.

    Science.gov (United States)

    Wang, Zhaohong; Sun, Weiwei; Chen, Antao; Kosilkin, Ilya; Bale, Denise; Dalton, Larry R

    2011-08-01

    Organic materials with a high second-order optical nonlinearity have an important application for the next generation of computing, telecommunications, and other industries. Because of a high electro-optic coefficient and low dielectric constant, N-benzyl-2-methyl-4-nitroaniline (BNA) single crystals have been grown and their optical properties have been extensively studied. In this Letter, a poled BNA thin film material was prepared through simultaneous vacuum evaporation and laser-assisted electrical poling. The linear electro-optic coefficients of BNA were measured by a Young's two-slit interference electro-optic measurement method. The dependence of the resulting electro-optic properties on optical power was explored. Enhancement induced by laser illumination was demonstrated. The BNA thin film can exhibit an r(33) value comparable to that of BNA single crystals. © 2011 Optical Society of America

  15. Nanoparticle-Assisted Scanning Focusing X-Ray Therapy with Needle Beam X Rays.

    Science.gov (United States)

    Davidson, R Andrew; Guo, Ting

    2016-01-01

    In this work, we show a new therapeutic approach using 40-120 keV X rays to deliver a radiation dose at the isocenter located many centimeters below the skin surface several hundred times greater than at the skin and how this dose enhancement can be augmented with nanomaterials to create several thousand-fold total dose enhancement effect. This novel approach employs a needle X-ray beam directed at the isocenter centimeters deep in the body while continuously scanning the beam to cover a large solid angle without overlapping at the skin. A Monte Carlo method was developed to simulate an X-ray dose delivered to the isocenter filled with X-ray absorbing and catalytic nanoparticles in a water phantom. An experimental apparatus consisting of a moving plastic phantom irradiated with a stationary 1 mm needle X-ray beam was built to test the theoretical predictions. X-ray films were used to characterize the dose profiles of the scanning X-ray apparatus. Through this work, it was determined that the X-ray dose delivered to the isocenter in a treatment voxel (t-voxel) underneath a 5 cm deep high-density polyethylene (HDPE) phantom was 295 ± 48 times greater than the surface dose. This measured value was in good agreement with the theoretical predicted value of 339-fold. Adding X-ray-absorbing nanoparticles, catalytic nanoparticles or both into the t-voxel can further augment the dose enhancement. For example, we predicted that adding 1 weight percentage (wp) of gold into water could increase the effective dose delivered to the target by onefold. Dose enhancement using 1 mm X-ray beam could reach about 1,600-fold in the t-voxel when 7.5 wp of 88 nm diameter silica-covered gold nanoparticles were added, which we showed in a previously published study can create a dose enhancement of 5.5 ± 0.46-fold without scanning focusing enhancement. Based on the experimental data from that study, mixing 0.02 wp 2.5 nm diameter small tetrakis hydroxymethyl phosphonium chloride (THPC

  16. Mechanical Characterization of Polydopamine-Assisted Silver Deposition on Polymer Substrates

    Science.gov (United States)

    Cordes, Amanda Laurence

    Inspired by the adhesive proteins in marine mussels, polydopamine has become a popular adhesive ad-layer for surface functionalization of a variety of substrates. Based on the chemistry of the dopamine monomer, amine and thiol functional groups are hypothesized to increase adhesion between polymer substrates and polydopamine thin films. This hypothesis was the central motivation for development of a tailorable thiol-ene system in order to study the effects of substrate chemistry on polydopamine adhesion. While polydopamine-adhered silver has been studied on a variety of substrates, no in depth mechanical characterization has been performed and to date, no research has been published on thiol-enes coated in polydopamine-adhered silver. The purpose of this study was to characterize the mechanical durability and adhesion properties of a polydopamine-adhered silver film on commercial substrates and a tailorable thiol-ene system. Polydopamine and silver coatings were deposited on a variety of polymer substrates through a simple dip-coat process. The polydopamine forms a thin uniform adhesive layer and the silver deposits in a discontinuous manner with a nanoparticle sized base layer covering the full surface and micron-sized clusters adhered sporadically on top. Mechanical tensile testing was performed to characterize the durability of the silver coating on commercial polymers. Coated nylon and HDPE showed no signs of degradation or delamination of the polydopamine-adhered silver coating up to 30% strain although both substrates showed large plastic deformation. Peel tests were performed on both commercial polymers as well as a tailorable thiol-ene system. Results support the hypothesis that polydopamine adhesion is increased with the presence of functional groups. Parts of the HDPE sample were cleanly peeled, but silver patches were left sporadically across the surface pointing to weaker adhesion between polyethylene and polydopamine. A high adhesive strength tape was

  17. Ion-beam-assisted hexagonal diamond formation from C sub 6 sub 0 fullerene

    CERN Document Server

    Zhu, X D; Naramoto, H; Narumi, K; Miyashita, A; Miyashita, K

    2003-01-01

    Ions are commonly believed to be detrimental to diamond growth because of the high degree of lattice disorder induced by ion bombardments. In this paper, we examine the possibility of preparing diamond using thermally evaporated C sub 6 sub 0 and simultaneous bombardment with Ne sup + ions. It is found that the diamonds can be grown on Si wafers in the appropriate substrate temperature and ion energy ranges. Micro-Raman spectroscopy, x-ray diffractometry, and scanning electronic microscopy were employed to characterize the deposited specimen. These measurements provide definite evidence of the structure of nanosized hexagonal diamond. The mechanism responsible for the diamond formation is discussed.

  18. Rapid microwave-assisted deposition of microwire patterns of nanoaluminum and nanosilver from colloids.

    Science.gov (United States)

    Olgun, Uğursoy

    2010-01-01

    The rapid self-assembly of microwire patterns of 52-nm aluminum and 19-nm silver nanoparticles was demonstrated under microwave heating using novel surfactant-solvent systems. Colloid solutions of 0.03% (w/v) nanoaluminum in 10% (v/v) poly(dimethylsiloxane)-acetone were used to self-assemble the microwire patterns of Al on glass substrates, which were dipped into the solution and held against the wall. Also, colloids of 0.001% (w/v) nanosilver prepared in an acetone solution of 33.3% (v/v) chloroform, 16.6% (v/v) poly(dimethylsiloxane), and 0.3% (v/v) Tween-20 were utilized for the deposition of microwire patterns under microwave heating at 51-55 degrees C. The evaporation-induced self-assembly of microwire patterns at the contact line was due to stick-slip dynamics. The rapid self-assembly of micropatterns of nanoaluminum and nanosilver was also demonstrated under microwave radiation within 2 min, and the width of the microwires was about 1-20 mum depending on the concentration of nanoparticles.

  19. Upcycling Waste Lard Oil into Vertical Graphene Sheets by Inductively Coupled Plasma Assisted Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Angjian Wu

    2017-10-01

    Full Text Available Vertical graphene (VG sheets were single-step synthesized via inductively coupled plasma (ICP-enhanced chemical vapor deposition (PECVD using waste lard oil as a sustainable and economical carbon source. Interweaved few-layer VG sheets, H2, and other hydrocarbon gases were obtained after the decomposition of waste lard oil. The influence of parameters such as temperature, gas proportion, ICP power was investigated to tune the nanostructures of obtained VG, which indicated that a proper temperature and H2 concentration was indispensable for the synthesis of VG sheets. Rich defects of VG were formed with a high I D / I G ratio (1.29, consistent with the dense edges structure observed in electron microscopy. Additionally, the morphologies, crystalline degree, and wettability of nanostructure carbon induced by PECVD and ICP separately were comparatively analyzed. The present work demonstrated the potential of our PECVD recipe to synthesize VG from abundant natural waste oil, which paved the way to upgrade the low-value hydrocarbons into advanced carbon material.

  20. Influence of plasma-induced energy deposition effects, the equation of state, thermal ionization, pulse shaping, and radiation on ion-beam-driven expansions of plane metal targets

    International Nuclear Information System (INIS)

    Long, K.A.; Tahir, N.A.

    1986-01-01

    In a previous paper by Long and Tahir [Phys. Fluids 29, 275 (1986)], the motion of plane targets irradiated by ion beams whose energy deposition was assumed to be independent of the ion energy, and the temperature and density of the plasma, was analyzed. In this paper, the analytic solution is extended in order to include the effects of a temperature-and density-dependent energy deposition as a result of electron excitation, an improved equation of state, thermal ionization, a pulse shape, and radiation losses. The change in the energy deposition with temperature and density leads to range shortening and an increased power deposition in the target. It is shown how the analytic theory can be used to analyze experiments to measure the enhanced energy deposition. In order to further analyze experiments, numerical simulations are presented which include the plasma-induced effects on the energy deposition. It is shown that since the change in the range is due to both decrease in density and the increase in temperature, it is not possible to separate these two effects in present experiments. Therefore, the experiments which measure the time-dependent energy of the ions emerging from the back side of a plane target do not as yet measure the energy loss as a function of the density and temperature of the plasma or of the energy of the ion, but only an averaged loss over certain ranges of these physical quantities

  1. The rapid prototyping of textured amorphous surfaces for the graphoepitaxial deposition of CdTe films using focused ion beam lithography

    Energy Technology Data Exchange (ETDEWEB)

    Neretina, S. [McMaster University, Department of Engineering Physics and Centre for Emerging Device Technologies, Hamilton, Ontario (Canada); Temple University, Department of Mechanical Engineering, Philadelphia, PA (United States); Hughes, R.A. [McMaster University, Brockhouse Institute for Materials Research, Hamilton, Ontario (Canada); Temple University, Department of Mechanical Engineering, Philadelphia, PA (United States); Stortz, G.; Mascher, P. [McMaster University, Department of Engineering Physics and Centre for Emerging Device Technologies, Hamilton, Ontario (Canada); Preston, J.S. [McMaster University, Department of Engineering Physics and Centre for Emerging Device Technologies, Hamilton, Ontario (Canada); McMaster University, Brockhouse Institute for Materials Research, Hamilton, Ontario (Canada)

    2011-02-15

    Cadmium telluride films deposited on amorphous substrates exhibit a grain structure characterized by [111]-oriented grains, but where the in-plane grain orientation is randomized due to the absence of epitaxy. Here, we explore the viability of promoting an in-plane grain alignment through graphoepitaxy. Fifteen different substrate surface textures were fabricated using focused ion beam lithography. This approach allows for the side-by-side deposition of surface textures where both the areal extent and depth of the surface features are varied in a systematic manner. CdTe films deposited overtop these textures show grain structures with dramatic variations, revealing that particular length scales have the most pronounced effect on the grain structure. (orig.)

  2. Computer simulations of an oxygen inductively coupled plasma used for plasma-assisted atomic layer deposition

    International Nuclear Information System (INIS)

    Tinck, S; Bogaerts, A

    2011-01-01

    In this paper, an O 2 inductively coupled plasma used for plasma enhanced atomic layer deposition of Al 2 O 3 thin films is investigated by means of modeling. This work intends to provide more information about basic plasma properties such as species densities and species fluxes to the substrate as a function of power and pressure, which might be hard to measure experimentally. For this purpose, a hybrid model developed by Kushner et al is applied to calculate the plasma characteristics in the reactor volume for different chamber pressures ranging from 1 to 10 mTorr and different coil powers ranging from 50 to 500 W. Density profiles of the various oxygen containing plasma species are reported as well as fluxes to the substrate under various operating conditions. Furthermore, different orientations of the substrate, which can be placed vertically or horizontally in the reactor, are taken into account. In addition, special attention is paid to the recombination process of atomic oxygen on the different reactor walls under the stated operating conditions. From this work it can be concluded that the plasma properties change significantly in different locations of the reactor. The plasma density near the cylindrical coil is high, while it is almost negligible in the neighborhood of the substrate. Ion and excited species fluxes to the substrate are found to be very low and negligible. Finally, the orientation of the substrate has a minor effect on the flux of O 2 , while it has a significant effect on the flux of O. In the horizontal configuration, the flux of atomic oxygen can be up to one order of magnitude lower than in the vertical configuration.

  3. Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Tchernycheva, M; Harmand, J C; Patriarche, G; Travers, L; Cirlin, G E

    2006-01-01

    Molecular beam epitaxial growth of GaAs nanowires using Au particles as a catalyst was investigated. Prior to the growth during annealing, Au alloyed with Ga coming from the GaAs substrate, and melted. Phase transitions of the resulting particles were observed in situ by reflection high-energy electron diffraction (RHEED). The temperature domain in which GaAs nanowire growth is possible was determined. The lower limit of this domain (320 deg. C) is close to the observed catalyst solidification temperature. Below this temperature, the catalyst is buried by GaAs growth. Above the higher limit (620 deg. C), the catalyst segregates on the surface with no significant nanowire formation. Inside this domain, the influence of growth temperature on the nanowire morphology and crystalline structure was investigated in detail by scanning electron microscopy and transmission electron microscopy. The correlation of the nanowire morphology with the RHEED patterns observed during the growth was established. Wurtzite GaAs was found to be the dominant crystal structure of the wires

  4. Hydrogen assisted stress-cracking behaviour of electron beam welded supermartensitic stainless steel weldments

    International Nuclear Information System (INIS)

    Bala Srinivasan, P.; Sharkawy, S.W.; Dietzel, W.

    2004-01-01

    Supermartensitic stainless steel (SMSS) grades are gaining popularity as an alternate material to duplex and super duplex stainless steels for applications in oil and gas industries. The weldability of these steels, though reported to be better when compared to conventional martensitic stainless steels, so far has been addressed with duplex stainless steel electrodes/fillers. This work addresses the stress-cracking behaviour of weldments of a high-grade supermartensitic stainless steel (11% Cr, 6.5% Ni and 2% Mo) in the presence of hydrogen. Welds were produced with matching consumables, using electron beam welding (EBW) process. Weldments were subjected to slow strain rate tests in 0.1 M NaOH solution, with introduction of hydrogen into the specimens by means of potentiostatic cathodic polarisation at a potential of -1200 mV versus Ag/AgCl electrode. Reference tests were performed in air for comparison, and the results suggest that both the SMSS base material and the EB weld metal are susceptible to embrittlement under the conditions of hydrogen charging

  5. Failure mechanisms of platinum aluminide bond coat/electron beam-physical vapor deposited thermal barrier coatings

    Science.gov (United States)

    Vaidyanathan, Krishnakumar

    Thermal barrier coatings (TBCs) allow operation of structural components, such as turbine blades and vanes in industrial and aircraft gas engines, at temperatures close to the substrate melting temperatures. They consist of four different layers; a high strength creep-resistant nickel-based superalloy substrate, an oxidation resistant bond coat (BC), a low thermal conductivity ceramic topcoat and a thermally grown oxide (TGO), that is predominantly alpha-Al 2O3, that forms between the BC and the TBC. Compressive stresses (3--5 GPa) that are generated in the thin TGO (0.25--8 mum) due to the mismatch in thermal coefficient of expansion between the TGO and BC play a critical role in the failure of these coatings. In this study, the failure mechanisms of a commercial yttria-stabilized zirconia (7YSZ) electron beam-physical vapor deposited (EB-PVD) coating on platinum aluminide (beta-(Ni,Pt)Al) bond coat have been identified. Two distinct mechanisms have been found responsible for the observed damage initiation and progression at the TGO/bond coat interface. The first mechanism leads to localized debonding at TGO/bond coat interface due to increased out-of-plane tensile stress, along bond coat features that manifest themselves as ridges. The second mechanism causes cavity formation at the TGO/bond coat interface, driven by cyclic plasticity of the bond coat. It has been found that the debonding at the TGO/bond coat interface due to the first mechanism is solely life determining. The final failure occurs by crack extension along either the TGO/bond coat interface or the TGO/YSZ interface or a combination of both, leading to large scale buckling. Based on these mechanisms, it is demonstrated that the bond coat grain size and the aspect ratio of the ridges have a profound influence on spallation lives of the coating. The removal of these ridges by fine polishing prior to TBC deposition led to a four-fold improvement in life. The failure mechanism identified for the

  6. Cupric and cuprous oxide by reactive ion beam sputter deposition and the photosensing properties of cupric oxide metal–semiconductor–metal Schottky photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Min-Jyun; Lin, Yong-Chen; Chao, Liang-Chiun, E-mail: lcchao@mail.ntust.edu.tw; Lin, Pao-Hung; Huang, Bohr-Ran

    2015-08-15

    Highlights: • CuO and Cu{sub 2}O were deposited by reactive ion beam sputter deposition. • Single phase CuO thin film is obtained with Ar:O{sub 2} = 2:1. • CuO MSM PD shows photoresponse from 400 nm to 1.30 μm. • CuO MSM PD is RC limited with a decay time less than 1 μs. - Abstract: Cupric (CuO) and cuprous (Cu{sub 2}O) oxide thin films have been deposited by reactive ion beam sputter deposition at 400 °C with an Ar:O{sub 2} ratio from 2:1 to 12:1. With an Ar:O{sub 2} ratio of 2:1, single phase polycrystalline CuO thin films were obtained. Decreasing oxygen flow rate results in CuO + Cu{sub 2}O and Cu{sub 2}O + Cu mixed thin films. As Ar:O{sub 2} ratio reaches 12:1, Cu{sub 2}O nanorods with diameter of 250 nm and length longer than 1 μm were found across the sample. Single phase CuO thin film exhibits an indirect band gap of 1.3 eV with a smooth surface morphology. CuO metal–semiconductor–metal (MSM) Schottky photodiodes (PD) were fabricated by depositing Cu interdigitated electrodes on CuO thin films. Photosensing properties of the CuO PD were characterized from 350 to 1300 nm and a maximum responsivity of 43 mA/W was found at λ = 700 nm. The MSM PD is RC limited with a decay time constant less than 1 μs.

  7. Direct writing of gold nanostructures with an electron beam: On the way to pure nanostructures by combining optimized deposition with oxygen-plasma treatment

    Directory of Open Access Journals (Sweden)

    Domagoj Belić

    2017-11-01

    Full Text Available This work presents a highly effective approach for the chemical purification of directly written 2D and 3D gold nanostructures suitable for plasmonics, biomolecule immobilisation, and nanoelectronics. Gold nano- and microstructures can be fabricated by one-step direct-write lithography process using focused electron beam induced deposition (FEBID. Typically, as-deposited gold nanostructures suffer from a low Au content and unacceptably high carbon contamination. We show that the undesirable carbon contamination can be diminished using a two-step process – a combination of optimized deposition followed by appropriate postdeposition cleaning. Starting from the common metal-organic precursor Me2-Au-tfac, it is demonstrated that the Au content in pristine FEBID nanostructures can be increased from 30 atom % to as much as 72 atom %, depending on the sustained electron beam dose. As a second step, oxygen-plasma treatment is established to further enhance the Au content in the structures, while preserving their morphology to a high degree. This two-step process represents a simple, feasible and high-throughput method for direct writing of purer gold nanostructures that can enable their future use for demanding applications.

  8. Structural properties and surface wettability of Cu-containing diamond-like carbon films prepared by a hybrid linear ion beam deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Peng; Sun, Lili; Li, Xiaowei [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Xu, Sheng [Gao Hong Coating Technology Co., Ltd, Huzhou 313000 (China); Ke, Peiling [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Wang, Aiying, E-mail: aywang@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2015-06-01

    Cu-containing diamond-like carbon (Cu-DLC) films were deposited on Si/glass substrate by a hybrid ion beam deposition system. The Cu concentration (0.1–39.7 at.%) in the film was controlled by varying the sputtering current. The microstructure and composition of Cu-DLC films were investigated systematically. The surface topography, roughness and surface wettability of the films were also studied. Results indicated that with increasing the Cu concentration, the water contact angle of the films changed from 66.8° for pure carbon film to more than 104.4° for Cu-DLC films with Cu concentration larger than 24.4 at.%. In the hydrophilic region, the polar surface energy decreased from 30.54 mJ/m{sup 2} for pure carbon film to 2.48 mJ/m{sup 2} for the film with Cu 7.0 at.%. - Highlights: • Cu-containing diamond-like carbon (DLC) films were deposited by a hybrid ion beam system. • Cu-containing DLC films exhibited a wide range of water contact angle. • The water contact angles vary with the surface energies and surface roughness.

  9. Time-Resolved Quantum Cascade Laser Absorption Spectroscopy of Pulsed Plasma Assisted Chemical Vapor Deposition Processes Containing BCl3

    Science.gov (United States)

    Lang, Norbert; Hempel, Frank; Strämke, Siegfried; Röpcke, Jürgen

    2011-08-01

    In situ measurements are reported giving insight into the plasma chemical conversion of the precursor BCl3 in industrial applications of boriding plasmas. For the online monitoring of its ground state concentration, quantum cascade laser absorption spectroscopy (QCLAS) in the mid-infrared spectral range was applied in a plasma assisted chemical vapor deposition (PACVD) reactor. A compact quantum cascade laser measurement and control system (Q-MACS) was developed to allow a flexible and completely dust-sealed optical coupling to the reactor chamber of an industrial plasma surface modification system. The process under the study was a pulsed DC plasma with periodically injected BCl3 at 200 Pa. A synchronization of the Q-MACS with the process control unit enabled an insight into individual process cycles with a sensitivity of 10-6 cm-1·Hz-1/2. Different fragmentation rates of the precursor were found during an individual process cycle. The detected BCl3 concentrations were in the order of 1014 molecules·cm-3. The reported results of in situ monitoring with QCLAS demonstrate the potential for effective optimization procedures in industrial PACVD processes.

  10. Iron selenide films by aerosol assisted chemical vapor deposition from single source organometallic precursor in the presence of surfactants

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Raja Azadar [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Badshah, Amin, E-mail: aminbadshah@yahoo.com [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Younis, Adnan [School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia); Khan, Malik Dilshad [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Akhtar, Javeed [Department of Physics, COMSATS Institute of Information Technology, Park Road, Chak Shahzad, Islamabad (Pakistan)

    2014-09-30

    This article presents the synthesis and characterization (multinuclear nuclear magnetic resonance, Fourier transform infrared spectroscopy, carbon–hydrogen–nitrogen–sulfur analyzer, atomic absorption spectrometry and thermogravimetric analysis) of a single source organometallic precursor namely 1-acetyl-3-(4-ferrocenylphenyl)selenourea for the fabrication of iron selenide (FeSe) films on glass substrates using aerosol assisted chemical vapor deposition (AACVD). The changes in the morphologies of the films have been monitored by the use of two different surfactants i.e. triton X-100 and tetraoctylphosphonium bromide during AACVD. The role of surfactant has been evaluated by examining the interaction of the surfactants with the precursor by using UV–vis spectroscopy and cyclic voltammetry. The fabricated FeSe films have been characterized with powder X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. - Highlights: • Ferrocene incorporated selenourea (FIS) has been synthesized and characterized. • FeSe thin films have been fabricated from FIS. • Mechanism of film growth was studied with cyclic voltammetry and UV–vis spectroscopy.

  11. Electrochemically assisted deposition of sol-gel bio-composite with co-immobilized dehydrogenase and diaphorase

    Energy Technology Data Exchange (ETDEWEB)

    Wang Zhijie [LCPME, UMR 7564, CNRS-Nancy University, 405, rue de Vandoeuvre, 54600 Villers-les-Nancy (France); Etienne, Mathieu, E-mail: mathieu.etienne@lcpme.cnrs-nancy.fr [LCPME, UMR 7564, CNRS-Nancy University, 405, rue de Vandoeuvre, 54600 Villers-les-Nancy (France); Kohring, Gert-Wieland [Mikrobiologie, Universitaet des Saarlandes, Campus, Geb. A1.5, D-66123 Saarbruecken (Germany); Bon-Saint-Come, Yemima; Kuhn, Alexander [Universite Bordeaux, ISM, ENSCPB, 16 avenue Pey Berland, 33607 Pessac (France); Walcarius, Alain [LCPME, UMR 7564, CNRS-Nancy University, 405, rue de Vandoeuvre, 54600 Villers-les-Nancy (France)

    2011-10-30

    We report here that the electrochemically assisted deposition (EAD) of silica thin films can be a good strategy to co-encapsulate D-sorbitol dehydrogenase (DSDH) and diaphorase in an active form. This is achieved via the electrolysis of a hydrolyzed sol containing the biomolecules to initiate the poly-condensation of silica precursors upon electrochemically induced pH increase at the electrode/solution interface. DSDH was found to be very sensitive to the silica gel environment and the addition of a positively-charged polyelectrolyte was necessary to ensure effective operational behavior of the biomolecules. The composition of the sol and the conditions for electrolysis have been optimized with respect to the intensity of the electrochemical response to D-sorbitol oxidation. The K{sub m} of DSDH in the electrodeposited film was in the range of 3 mM, slightly better than the value determined biochemically in solution (6.5 mM). The co-immobilization of DSDH and diaphorase in this way led on the one hand to the possible reduction of NAD{sup +} to NADH (simultaneously to D-sorbitol oxidation) and on the other hand to the safe re-oxidation of the co-factor using a mediator (ferrocenedimethanol) as electron relay. The bioelectrocatalytic response looks promising for electro-enzymatic applications. To support this idea, the EAD of sol-gel bio-composite has been extended to macroporous electrodes displaying a much bigger electroactive surface area.

  12. Thin films of polymer blends deposited by matrix-assisted pulsed laser evaporation: Effects of blending ratios

    International Nuclear Information System (INIS)

    Paun, Irina Alexandra; Ion, Valentin; Moldovan, Antoniu; Dinescu, Maria

    2011-01-01

    In this work, we show successful use of matrix-assisted pulsed laser evaporation (MAPLE) for obtaining thin films of PEG:PLGA blends, in the view of their use for controlled drug delivery. In particular, we investigate the influence of the blending ratios on the characteristics of the films. We show that the roughness of the polymeric films is affected by the ratio of each polymer within the blend. In addition, we perform Fourier transformed infrared spectroscopy (FTIR) measurements and we find that the intensities ratios of the infrared absorption bands of the two polymers are consistent with the blending ratios. Finally, we assess the optical constants of the polymeric films by spectroscopic ellipsometry (SE). We point out that the blending ratios exert an influence on the optical characteristics of the films and we validate the SE results by atomic force microscopy and UV-vis spectrophotometry. In all, we stress that the ratios in which the two polymers are blended have significant impact on the morphology, chemical structure and optical characteristics of the polymeric films deposited by MAPLE.

  13. Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization

    International Nuclear Information System (INIS)

    Tchernycheva, M; Sartel, C; Cirlin, G; Travers, L; Patriarche, G; Harmand, J-C; Dang, Le Si; Renard, J; Gayral, B; Nevou, L; Julien, F

    2007-01-01

    This paper reports on the growth, structural and optical properties of GaN free-stranding nanowires synthesized in catalyst-free mode on Si(111) substrate by plasma-assisted molecular beam epitaxy. Cylindrical nanowires with a hexagonal cross-section defined by {1 0 1-bar 0} planes and diameters down to 20 nm were observed. The nanowire length increases as a function of their diameter, following the Gibbs-Thomson expression. The growth rate in the lateral direction was studied using thin AlN marker layers showing that the lateral over axial growth rate ratio can be tuned from ∼1% to ∼10% by changing the III/V flux ratio, with the lateral growth remaining homogeneous along the NW axis. Nanowire ensembles showed a strong near band edge photoluminescence up to room temperature. Low-temperature micro-photoluminescence from a single wire is peaked at 3.478 eV with broadening of 6-10 meV. This emission is similar to the luminescence of nanowire ensembles, which demonstrates strain homogeneity from wire to wire. The optical properties along the wire axis probed by micro-cathodoluminescence were found to be uniform, with no evidence of a higher defect density in the bottom part of the nanowires next to the Si substrate

  14. Roles of kinetics and energetics in the growth of AlN by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Im, I. H.; Minegishi, T.; Hanada, T.; Lee, S. W.; Cho, M. W.; Yao, T.; Oh, D. C.; Chang, J. H.

    2006-01-01

    The roles of kinetics and energetics in the growth processes of AlN on c-sapphire by plasma assisted molecular beam epitaxy are investigated by varying the growth rate from 1 to 31 A/min and the substrate temperature from 800 to 1000 .deg. C. The energetics is found to govern the growth of AlN in the low-growth rate region even at a low substrate temperature of 800 .deg. C owing to the enhanced residence time of adatoms, thereby increasing the surface migration length. As the growth rate increases, the growth tends to be governed by kinetics because of a reduction in the residence time of adatoms. Consequently, the surface roughness and crystal quality are greatly improved for the low-growth-rate case. In addition, the lattice strain relaxation is completed from the beginning of epitaxy for energetics-limiting growth while lattice strain relaxation is retarded for kinetics-limiting growth because of pre-existing partial strain relaxation. Energetics becomes more favorable as the substrate temperature is raised because of an increase in the surface diffusion length owing to an enhanced diffusion coefficient. Consequently high-crystal-quality AlN layers are grown under the energetics-limiting growth condition with a screw dislocation density of 7.4 x 10 8 cm -2 even for a thin 42-nm thick film.

  15. Laser-assisted atom probe tomography of semiconductors: The impact of the focused-ion beam specimen preparation.

    Science.gov (United States)

    Bogdanowicz, J; Kumar, A; Fleischmann, C; Gilbert, M; Houard, J; Vella, A; Vandervorst, W

    2018-03-05

    This paper demonstrates the increased light absorption efficiency of semiconducting atom probe tips resulting from focused-ion-beam (FIB) preparation. We use transmission electron microscopy to show that semiconducting tips prepared with FIB are surrounded with an amorphized shell. Photomodulated optical reflectance measurements then provide evidence that FIB-induced damage leads to an increase in both sub- and supra-bandgap light absorption efficiency. Using laser-assisted atom probe tomography (La-APT) measurements, we finally show that, for a nanoscale tip geometry, the laser-induced heating of a tip during La-APT is enhanced by the FIB preparation. We conclude that, upon supra-bandgap illumination, the presence of a FIB-amorphized surface dramatically increases the light-induced heat generation inside semiconducting tips during La-APT. Furthermore, we also deduce that, in the intriguing case of sub-bandgap illumination, the amorphization plays a crucial role in the unexpected light absorption. Copyright © 2018 Elsevier B.V. All rights reserved.

  16. Dynamic nano-imaging of label-free living cells using electron beam excitation-assisted optical microscope.

    Science.gov (United States)

    Fukuta, Masahiro; Kanamori, Satoshi; Furukawa, Taichi; Nawa, Yasunori; Inami, Wataru; Lin, Sheng; Kawata, Yoshimasa; Terakawa, Susumu

    2015-11-03

    Optical microscopes are effective tools for cellular function analysis because biological cells can be observed non-destructively and non-invasively in the living state in either water or atmosphere condition. Label-free optical imaging technique such as phase-contrast microscopy has been analysed many cellular functions, and it is essential technology for bioscience field. However, the diffraction limit of light makes it is difficult to image nano-structures in a label-free living cell, for example the endoplasmic reticulum, the Golgi body and the localization of proteins. Here we demonstrate the dynamic imaging of a label-free cell with high spatial resolution by using an electron beam excitation-assisted optical (EXA) microscope. We observed the dynamic movement of the nucleus and nano-scale granules in living cells with better than 100 nm spatial resolution and a signal-to-noise ratio (SNR) around 10. Our results contribute to the development of cellular function analysis and open up new bioscience applications.

  17. InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Young Sheng-Joue

    2011-01-01

    Full Text Available Abstract The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111 substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

  18. Catalyst-free III-nitride Nanowires by Plasma-assisted Molecular Beam Epitaxy: Growth, Characterization, and Applications

    Science.gov (United States)

    Carnevale, Santino D.

    In the past twenty years, III-nitride devices have had an enormous impact on semiconductor-based technologies. This impact is seen in both optoelectronic and electronic devices. The aim of this dissertation is to take advantage of III-nitride nanowires grown by plasma-assisted molecular beam epitaxy to form heterostructures that are difficult or impossible to achieve in traditional, thin films. To do this, it is first necessary to establish the growth phase diagrams that correlate the characteristics of GaN nanowires to MBE growth conditions. By using the information in these growth maps we can control growth kinetics and the resulting nanowire structures by making strategic, timely changes to growth conditions. Using this control electronic and optoelectronic III-nitride nanowire devices are created. First, coaxially-oriented AlN/GaN nanowire resonant tunneling diodes are formed on Si substrates. Second, polarization-induced nanowire light emitting diodes (PINLEDs) are fabricated that exhibit electroluminescence at wavelengths from the deep UV into the visible. Because these PINLEDs utilize polarization doping, they can be formed with and without the use of dopants. Device and structural characterization are provided, including a detailed investigation of the mixed material polarity in these nanowires. Finally, the dissertation closes with a discussion of recent work and future ideas for optimizing the PINLED design.

  19. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  20. Dynamic nano-imaging of label-free living cells using electron beam excitation-assisted optical microscope

    Science.gov (United States)

    Fukuta, Masahiro; Kanamori, Satoshi; Furukawa, Taichi; Nawa, Yasunori; Inami, Wataru; Lin, Sheng; Kawata, Yoshimasa; Terakawa, Susumu

    2015-01-01

    Optical microscopes are effective tools for cellular function analysis because biological cells can be observed non-destructively and non-invasively in the living state in either water or atmosphere condition. Label-free optical imaging technique such as phase-contrast microscopy has been analysed many cellular functions, and it is essential technology for bioscience field. However, the diffraction limit of light makes it is difficult to image nano-structures in a label-free living cell, for example the endoplasmic reticulum, the Golgi body and the localization of proteins. Here we demonstrate the dynamic imaging of a label-free cell with high spatial resolution by using an electron beam excitation-assisted optical (EXA) microscope. We observed the dynamic movement of the nucleus and nano-scale granules in living cells with better than 100 nm spatial resolution and a signal-to-noise ratio (SNR) around 10. Our results contribute to the development of cellular function analysis and open up new bioscience applications. PMID:26525841

  1. Development of a hybrid molecular beam epitaxy deposition system for in situ surface x-ray studies

    Science.gov (United States)

    Andersen, Tassie K.; Cook, Seyoung; Benda, Erika; Hong, Hawoong; Marks, Laurence D.; Fong, Dillon D.

    2018-03-01

    A portable metalorganic gas delivery system designed and constructed to interface with an existing molecular beam epitaxy chamber at beamline 33-ID-E of the Advanced Photon Source is described. This system offers the ability to perform in situ X-ray measurements of complex oxide growth via hybrid molecular beam epitaxy. The performance of the hybrid molecular beam epitaxy system while delivering metalorganic source materials is described. The high-energy X-ray scattering capabilities of the hybrid molecular beam epitaxy system are demonstrated both on oxide films grown solely from the metalorganic source and ABO3 oxide perovskites containing elements from both the metalorganic source and a traditional effusion cell.

  2. The Influences of Thickness on the Optical and Electrical Properties of Dual-Ion-Beam Sputtering-Deposited Molybdenum-Doped Zinc Oxide Layer

    Directory of Open Access Journals (Sweden)

    Chin-Chiuan Kuo

    2011-01-01

    Full Text Available The thickness of transparent conductive oxide (TCO layer significantly affects not only the optical and electrical properties, but also its mechanical durability. To evaluate these influences on the molybdenum-doped zinc oxide layer deposited on a flexible polyethersulfone (PES substrate by using a dual-ion-beam sputtering system, films with various thicknesses were prepared at a same condition and their optical and electrical performances have been compared. The results show that all the deposited films present a crystalline wurtzite structure, but the preferred orientation changes from (002 to (100 with increasing the film thickness. Thicker layer contains a relative higher carrier concentration, but the consequently accumulated higher internal stress might crack the film and retard the carrier mobility. The competition of these two opposite trends for carrier concentration and carrier mobility results in that the electrical resistivity of molybdenum-doped zinc oxide first decreases with the thickness but suddenly rises when a critical thickness is reached.

  3. Comparative study of the radio-frequency magnetron sputter deposited CaP films fabricated onto acid-etched or pulsed electron beam-treated titanium

    International Nuclear Information System (INIS)

    Surmeneva, M.A.; Surmenev, R.A.; Tyurin, A.I.; Mukhametkaliyev, T.M.; Teresov, A.D.; Koval, N.N.; Pirozhkova, T.S.; Shuvarin, I.A.; Oehr, C.

    2014-01-01

    This study investigated the effect of the substrate morphology introduced by various substrate preparation techniques, namely acid etching (AE) and pulsed electron beam (PEB) treatments, on the CaP film morphology and mechanical properties. The morphology, nanohardness, and Young's modulus of the CaP coating deposited via radio-frequency (RF) magnetron sputtering were investigated by X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), scanning electron microscopy and nanoindentation studies. The Ca/P ratios of the CaP coating deposited via RF magnetron sputtering onto titanium substrates treated using AE and PEB according to XPS were 1.73 ± 0.03 and 1.72 ± 0.04, respectively, which is close to the Ca/P ratio of 1.67 typical for stoichiometric hydroxyapatite (HA). The AFM experiments and nanoindentation studies revealed significant differences in the morphology and mechanical responses of the CaP films deposited onto acid-etched titanium substrates treated with PEB. Deposition of the CaP coating onto the acid-etched surface resulted in a rough surface with the presence of an island-like morphology. The CaP coating onto a smooth titanium substrate treated by PEB exhibited grains with irregular shapes and decreased size. The nanoindentation hardness and the Young's modulus of the HA coating deposited onto titanium treated by the PEB treatment were determined to be 7.0 ± 0.3 and 124 ± 3 GPa, respectively, which are significantly higher than those of the CaP coating on the acid-etched titanium substrates. Moreover, the elastic strain to failure (H/E), the plastic deformation resistance (H 3 /E 2 ), and the percent elastic recovery %R of the HA coating on titanium after surface irradiation with an electron energy density of 15 J·cm −2 were determined to increase by ∼ 23%, ∼ 70% and ∼ 53%, respectively, compared to the CaP coating on acid-etched titanium. - Highlights: • Island-like morphology of calcium phosphate coating on

  4. Pulsed laser-assisted focused electron-beam-induced etching of titanium with XeF2: enhanced reaction rate and precursor transport.

    Science.gov (United States)

    Noh, J H; Fowlkes, J D; Timilsina, R; Stanford, M G; Lewis, B B; Rack, P D

    2015-02-25

    In order to enhance the etch rate of electron-beam-induced etching, we introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. The evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. The increased etch rate is attributed to photothermally enhanced Ti-F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.

  5. Formation of biaxial texture in metal films by selective ion beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Park, S.J. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States); Norton, D.P. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States)]. E-mail: dnort@mse.ufl.edu; Selvamanickam, Venkat [IGC-SuperPower, LLC, 450 Duane Avenue, Schenectady, NY 12304 (United States)

    2006-05-15

    The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature.

  6. Formation of biaxial texture in metal films by selective ion beam etching

    International Nuclear Information System (INIS)

    Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

    2006-01-01

    The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature

  7. Hydrogen Charging Effects in Pd/Ti/TiO2/Ti Thin Films Deposited on Si(111 Studied by Ion Beam Analysis Methods

    Directory of Open Access Journals (Sweden)

    K. Drogowska

    2012-01-01

    Full Text Available Titanium and titanium dioxide thin films were deposited onto Si(111 substrates by magnetron sputtering from a metallic Ti target in a reactive Ar+O2 atmosphere, the composition of which was controlled by precision gas controllers. For some samples, 1/3 of the surface was covered with palladium using molecular beam epitaxy. Chemical composition, density, and layer thickness of the layers were determined by Auger electron spectroscopy (AES and Rutherford backscattering spectrometry (RBS. The surface morphology was studied using high-resolution scanning electron microscopy (HRSEM. After deposition, smooth, homogenous sample surfaces were observed. Hydrogen charging for 5 hours under pressure of 1 bar and at temperature of 300°C results in granulation of the surface. Hydrogen depth profile was determined using secondary ion mass spectrometry (SIMS and nuclear Reaction Analysis (N-15 method, using a 15N beam at and above the resonance energy of 6.417 MeV. NRA measurements proved a higher hydrogen concentration in samples with partially covered top layers, than in samples without palladium. The highest value of H concentration after charging was about 50% (in the palladium-covered part and about 40% in titanium that was not covered by Pd. These values are in good agreement with the results of SIMS measurements.

  8. Low temperature synthesis of α-Al2O3 films by high-power plasma-assisted chemical vapour deposition

    Science.gov (United States)

    Jiang, Kaiyun; Sarakinos, Kostas; Konstantinidis, Stephanos; Schneider, Jochen M.

    2010-08-01

    In this study, we deposit Al2O3 films using plasma-assisted chemical vapour deposition (PACVD) in an Ar-H2-O2-AlCl3 atmosphere. A novel generator delivering approximately 4 times larger power densities than those conventionally employed in PACVD enabling efficient AlCl3 dissociation in the gas phase as well as a more intense energetic bombardment of the growing film is utilized. We demonstrate that these deposition conditions allow for the growth of dense α-Al2O3 films with negligible Cl incorporation and elastic properties similar to those of the bulk α-Al2O3 at a temperature of 560 ± 10 °C.

  9. Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

    International Nuclear Information System (INIS)

    Yang, Jie; Zhao, Bo; Wang, Chong; Qiu, Feng; Wang, Rongfei; Yang, Yu

    2016-01-01

    Highlights: • Ge islands were prepared by ion beam sputtering with different grid-to-grid gaps. • Ge islands with larger sizes and low density are observed in 1-mm-spaced samples. • The island growth was determined by sputter energy and the quality of Si buffer. • The crystalline volume fraction of buffer must be higher than 72% to grow islands. - Abstract: Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

  10. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  11. Metal impurity-assisted formation of nanocone arrays on Si by low energy ion-beam irradiation

    Science.gov (United States)

    Steeves Lloyd, Kayla; Bolotin, Igor L.; Schmeling, Martina; Hanley, Luke; Veryovkin, Igor V.

    2016-10-01

    Fabrication of nanocone arrays on Si surfaces was demonstrated using grazing incidence irradiation with 1 keV Ar+ ions concurrently sputtering the surface and depositing metal impurity atoms on it. Among three materials compared as co-sputtering targets Si, Cu and stainless steel, only steel was found to assist the growth of dense arrays of nanocones at ion fluences between 1018 and 1019 ions/cm2. The structural characterization of samples irradiated with these ion fluences using Scanning Electron Microscopy and Atomic Force Microscopy revealed that regions far away from co-sputtering targets are covered with nanoripples, and that nanocones popped-up out of the rippled surfaces when moving closer to co-sputtering targets, with their density gradually increasing and reaching saturation in the regions close to these targets. The characterization of the samples' chemical composition with Total Reflection X-ray Fluorescence Spectrometry and X-ray Photoelectron Spectroscopy revealed that the concentration of metal impurities originating from stainless steel (Fe, Cr and Ni) was relatively high in the regions with high density of nanocones (Fe reaching a few atomic percent) and much lower (factor of 10 or so) in the region of nanoripples. Total Reflection X-ray Fluorescence Spectrometry measurements showed that higher concentrations of these impurities are accumulated under the surface in both regions. X-ray Photoelectron Spectroscopy experiments showed no direct evidence of metal silicide formation occurring on one region only (nanocones or nanoripples) and thus showed that this process could not be the driver of nanocone array formation. Also, these measurements indicated enhancement in oxide formation on regions covered by nanocones. Overall, the results of this study suggest that the difference in concentration of metal impurities in the thin near-surface layer forming under ion irradiation might be responsible for the differences in surface structures.

  12. Structure-designable method to form super low-k SiOC film (k = 2.2) by neutral-beam-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yasuhara, Shigeo; Chung, Juhyun; Kubota, Tomohiro; Ohtake, Hiroto; Samukawa, Seiji [Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Tajima, Kunitoshi; Yano, Hisashi; Kadomura, Shingo; Yoshimaru, Masaki; Matsunaga, Noriaki, E-mail: samukawa@ifs.tohoku.ac.j [Semiconductor Technology Academic Research Center (STARC), 2F Yusen Shinyokohama Bldg, 17-2, Shinyokohama 3-chome, Kohoku-ku, Yokohama 222-0033 (Japan)

    2009-03-07

    To precisely control the dielectric constant and the structure of a low-k SiOC film, we have developed a neutral-beam-enhanced chemical vapour deposition (NBECVD) method. Using Ar NBECVD, we can precisely control the dielectric constant and the film modulus of low-k SiOC deposited on Si substrates because this method avoids precursor dissociation that results from electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si-(CH{sub 3}){sub x} as well as the proportions of linear (two-dimensional SiOC), network and cage (three-dimensional SiOC) structures by changing the precursor, we obtained a k value of 2.2 and a reasonable modulus by using dimethyl dimethoxy silane as a precursor. Additionally, the NBECVD process is applicable as a method for damage-free super-low-k film deposition on the underlying low-k film that is sensitive to damage by the plasma.

  13. Cupric and cuprous oxide by reactive ion beam sputter deposition and the photosensing properties of cupric oxide metal-semiconductor-metal Schottky photodiodes

    Science.gov (United States)

    Hong, Min-Jyun; Lin, Yong-Chen; Chao, Liang-Chiun; Lin, Pao-Hung; Huang, Bohr-Ran

    2015-08-01

    Cupric (CuO) and cuprous (Cu2O) oxide thin films have been deposited by reactive ion beam sputter deposition at 400 °C with an Ar:O2 ratio from 2:1 to 12:1. With an Ar:O2 ratio of 2:1, single phase polycrystalline CuO thin films were obtained. Decreasing oxygen flow rate results in CuO + Cu2O and Cu2O + Cu mixed thin films. As Ar:O2 ratio reaches 12:1, Cu2O nanorods with diameter of 250 nm and length longer than 1 μm were found across the sample. Single phase CuO thin film exhibits an indirect band gap of 1.3 eV with a smooth surface morphology. CuO metal-semiconductor-metal (MSM) Schottky photodiodes (PD) were fabricated by depositing Cu interdigitated electrodes on CuO thin films. Photosensing properties of the CuO PD were characterized from 350 to 1300 nm and a maximum responsivity of 43 mA/W was found at λ = 700 nm. The MSM PD is RC limited with a decay time constant less than 1 μs.

  14. Characterization of AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin films deposited by electron-beam technique

    Energy Technology Data Exchange (ETDEWEB)

    Karaagac, H; Parlak, M [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey); Kaleli, M, E-mail: parlak@metu.edu.t [Department of Physics, Sueleyman Demirel University, 32260 Isparta (Turkey)

    2009-08-21

    AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin films were deposited onto a quartz substrate by the electron-beam technique. For the investigation of the annealing effect on structural, optical and electrical properties of deposited films, samples were annealed in the temperature range 300-775 {sup 0}C. The composition analyses of the deposited films carried out by energy dispersive x-ray analysis measurements have shown that the deposited AgGa{sub 0.5}In{sub 0.5}Se{sub 2} films were indium- and gallium-rich but selenium- and slightly silver-deficient and there was a remarkable change in composition with annealing. As a result of x-ray diffraction measurements, the as-deposited films were found to have an amorphous structure and after annealing at 300 {sup 0}C a polycrystalline structure with different phases was observed. However, subsequent annealing resulted in the formation of single phase AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin film at about 775 {sup 0}C. The absorption coefficient of the films was determined from the transmission spectra and the band gap values were calculated and found to vary between 1.57 and 2.43 eV following annealing in the temperature range 300-775 {sup 0}C. The refractive index (n) and extinction coefficient (k) of the films were evaluated by applying the envelope method to the transmission spectra. The spectral distributions of these quantities for both as-deposited and annealed films were determined in detail and it was observed that there has been a remarkable influence of annealing on these quantities. The electrical properties of AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin films were also investigated by means of temperature dependent conductivity measurements in the temperature range 100-460 K. The resistivity of the samples depending on the annealing temperature varied between 6.5 x 10{sup 5} and 16 {Omega} cm. As a result of the hot-probe method it was observed that the as-deposited films have indicated an n-type behaviour, while all the

  15. A combined molecular dynamics and Monte Carlo simulation of the spatial distribution of energy deposition by proton beams in liquid water

    International Nuclear Information System (INIS)

    Garcia-Molina, Rafael; Abril, Isabel; Heredia-Avalos, Santiago; Kyriakou, Ioanna; Emfietzoglou, Dimitris

    2011-01-01

    We have evaluated the spatial distribution of energy deposition by proton beams in liquid water using the simulation code SEICS (Simulation of Energetic Ions and Clusters through Solids), which combines molecular dynamics and Monte Carlo techniques and includes the main interaction phenomena between the projectile and the target constituents: (i) the electronic stopping force due to energy loss to target electronic excitations, including fluctuations due to the energy-loss straggling, (ii) the elastic scattering with the target nuclei, with their corresponding energy loss and (iii) the dynamical changes in projectile charge state due to electronic capture and loss processes. An important feature of SEICS is the accurate account of the excitation spectrum of liquid water, based on a consistent solid-state description of its energy-loss-function over the whole energy and momentum space. We analyse how the above-mentioned interactions affect the depth distribution of the energy delivered in liquid water by proton beams with incident energies of the order of several MeV. Our simulations show that the position of the Bragg peak is determined mainly by the stopping power, whereas its width can be attributed to the energy-loss straggling. Multiple elastic scattering processes contribute slightly only at the distal part of the Bragg peak. The charge state of the projectiles only changes when approaching the end of their trajectories, i.e. near the Bragg peak. We have also simulated the proton-beam energy distribution at several depths in the liquid water target, and found that it is determined mainly by the fluctuation in the energy loss of the projectile, evaluated through the energy-loss straggling. We conclude that a proper description of the target excitation spectrum as well as the inclusion of the energy-loss straggling is essential in the calculation of the proton beam depth-dose distribution.

  16. Ultraviolet optical and microstructural properties of MgF2 and LaF3 coatings deposited by ion-beam sputtering and boat and electron-beam evaporation.

    Science.gov (United States)

    Ristau, Detlev; Günster, Stefan; Bosch, Salvador; Duparré, Angela; Masetti, Enrico; Ferré-Borrull, Josep; Kiriakidis, George; Peiró, Francesca; Quesnel, Etienne; Tikhonravov, Alexander

    2002-06-01

    Single layers of MgF2 and LaF3 were deposited upon superpolished fused-silica and CaF2 substrates by ion-beam sputtering (IBS) as well as by boat and electron beam (e-beam) evaporation and were characterized by a variety of complementary analytical techniques. Besides undergoing photometric and ellipsometric inspection, the samples were investigated at 193 and 633 nm by an optical scatter measurement facility. The structural properties were assessed with atomic-force microscopy, x-ray diffraction, TEM techniques that involved conventional thinning methods for the layers. For measurement of mechanical stress in the coatings, special silicon substrates were coated and analyzed. The dispersion behavior of both deposition materials, which was determined on the basis of various independent photometric measurements and data reduction techniques, is in good agreement with that published in the literature and with the bulk properties of the materials. The refractive indices of the MgF2 coatings ranged from 1.415 to 1.440 for the wavelength of the ArF excimer laser (193 nm) and from 1.435 to 1.465 for the wavelength of the F2 excimer laser (157 nm). For single layers of LaF3 the refractive indices extended from 1.67 to 1.70 at 193 nm to approximately 1.80 at 157 nm. The IBS process achieves the best homogeneity and the lowest surface roughness values (close to 1 nm(rms)) of the processes compared in the joint experiment. In contrast to MgF2 boat and e-beam evaporated coatings, which exhibit tensile mechanical stress ranging from 300 to 400 MPa, IBS coatings exhibit high compressive stress of as much as 910 MPa. A similar tendency was found for coating stress in LaF3 single layers. Experimental results are discussed with respect to the microstructural and compositional properties as well as to the surface topography of the coatings.

  17. CFD simulation of pesticide spray from air-assisted sprayers in an apple orchard: Tree deposition and off-target losses

    Science.gov (United States)

    Hong, Se-Woon; Zhao, Lingying; Zhu, Heping

    2018-02-01

    The ultimate goal of a pesticide spraying system is to provide adequate coverage on intended canopies with a minimum amount of spray materials and off-target waste. Better spray coverage requires an understanding of the fate and transport of spray droplets carried by turbulent airflows in orchards. In this study, an integrated computational fluid dynamics (CFD) model was developed to predict displacement of pesticide spray droplets discharged from an air-assisted sprayer, depositions onto tree canopies, and off-target deposition and airborne drift in an apple orchard. Pesticide droplets discharged from a moving sprayer were tracked using the Lagrangian particle transport model, and the deposition model was applied to droplets entering porous canopy zones. Measurements of the droplet deposition and drift in the same orchard were used to validate the model simulations. Good agreement was found between the measured and simulated spray concentrations inside tree canopies and off-target losses (ground deposition and airborne drifts) with the overall relative errors of 22.1% and 40.6%, respectively, under three growth stages. The CFD model was able to estimate the mass balance of pesticide droplets in the orchard, which was practically difficult to investigate by measurements in field conditions. As the foliage of trees became denser, spray deposition inside canopies increased from 8.5% to 65.8% and airborne drift and ground deposition decreased from 25.8% to 7.0% and 47.8% to 21.2%, respectively. Higher wind speed also increased the spray airborne drift downwind of the orchard. This study demonstrates that CFD model can be used to evaluate spray application performance and design and operate sprayers with increased spray efficiencies and reduced drift potentials.

  18. Molecular beam epitaxy of GaAs nanowires and their sustainability for optoelectronic applications. Comparing Au- and self-assisted growth methods

    Energy Technology Data Exchange (ETDEWEB)

    Breuer, Steffen

    2011-09-28

    In this work the synthesis of GaAs nanowires by molecular beam epitaxy (MBE) using the vapour-liquid-solid (VLS) mechanism is investigated. A comparison between Au- and self-assisted VLS growth is at the centre of this thesis. While the Au-assisted method is established as a versatile tool for nanowire growth, the recently developed self-assisted variation results from the exchange of Au by Ga droplets and thus eliminates any possibility of Au incorporation. By both methods, we achieve nanowires with epitaxial alignment to the Si(111) substrates. Caused by differences during nanowire nucleation, a parasitic planar layer grows between the nanowires by the Au-assisted method, but can be avoided by the self-assisted method. Au-assisted nanowires grow predominantly in the metastable wurtzite crystal structure, while their self-assisted counterparts have the zincblende structure. All GaAs nanowires are fully relaxed and the strain arising from the lattice mismatch between GaAs and Si of 4.1 % is accommodated by misfit dislocations at the interface. Self-assisted GaAs nanowires are generally found to have vertical and non-polar side facets, while tilted and polar nanofacets were described for Au-assisted GaAs nanowires. We employ VLS nucleation theory to understand the effect of the droplet material on the lateral facets. Optoelectronic applications require long minority carrier lifetimes at room temperature. We fabricate GaAs/(Al,Ga)As core-shell nanowires and analyse them by transient photoluminescence (PL) spectroscopy. The results are 2.5 ns for the self-assisted nanowires as well as 9 ps for the Au-assisted nanowires. By temperature-dependent PL measurements we find a characteristic activation energy of 77 meV that is present only in the Au-assisted nanowires. We conclude that most likely Au is incorporated from the droplets into the GaAs nanowires and acts as a deep, non-radiative recombination centre.

  19. Fabrication of FeSi and Fe{sub 3}Si compounds by electron beam induced mixing of [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers grown by focused electron beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Porrati, F.; Sachser, R.; Huth, M. [Physikalisches Institut, Goethe-Universität, Max-von-Laue-Str. 1, D-60438 Frankfurt am Main (Germany); Gazzadi, G. C. [S3 Center, Nanoscience Institute-CNR, Via Campi 213/a, 41125 Modena (Italy); Frabboni, S. [S3 Center, Nanoscience Institute-CNR, Via Campi 213/a, 41125 Modena (Italy); FIM Department, University of Modena and Reggio Emilia, Via G. Campi 213/a, 41125 Modena (Italy)

    2016-06-21

    Fe-Si binary compounds have been fabricated by focused electron beam induced deposition by the alternating use of iron pentacarbonyl, Fe(CO){sub 5}, and neopentasilane, Si{sub 5}H{sub 12} as precursor gases. The fabrication procedure consisted in preparing multilayer structures which were treated by low-energy electron irradiation and annealing to induce atomic species intermixing. In this way, we are able to fabricate FeSi and Fe{sub 3}Si binary compounds from [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers, as shown by transmission electron microscopy investigations. This fabrication procedure is useful to obtain nanostructured binary alloys from precursors which compete for adsorption sites during growth and, therefore, cannot be used simultaneously.

  20. Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma

    International Nuclear Information System (INIS)

    Franz, D.

    1999-09-01

    In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 o C according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 10 12 -10 1' 3 cm -3 . For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind of plasma. Diborane

  1. Deposição e perdas da calda em feijoeiro em aplicação com assistência de ar na barra pulverizadora Spray deposition and spray loss using air-assistance boom on bean plants

    Directory of Open Access Journals (Sweden)

    Carlos Gilberto Raetano

    2004-01-01

    Full Text Available Com o objetivo de avaliar a influência da assistência de ar na deposição da calda de pulverização, em plantas de feijoeiro (Phaseolus vulgaris aos 26 dias após a emergência (DAE, com pontas de pulverização de jato cônico vazio (JA-0,5 e JA-1 e jato plano (AXI-110015, e volumes de calda, foi realizado um experimento em delineamento inteiramente casualizado, utilizando como traçador o íon cobre. Alvos coletores (papel de filtro com 3 x 3 cm foram afixados nas superfícies adaxial e abaxial de folíolos posicionados nas partes superior e inferior das plantas. Para aplicar a solução traçadora, utilizou-se pulverizador com barras de 14 metros, com e sem assistência de ar, volumes de 60 e 100 L.ha-1, e velocidade do ar correspondente a 50% da rotação máxima do ventilador. Após a aplicação, os coletores foram lavados individualmente em solução extratora de ácido nítrico a 1,0 mol.L-1, e a quantificação dos depósitos através de espectrofotometria. A assistência de ar não influenciou na deposição da calda tanto a 60 quanto a 100 L.ha-1. O maior volume proporcionou maiores depósitos, sendo constatadas elevadas perdas para o solo (mais de 60%.Aiming to evaluate the effect of air-assistance in spray deposition on bean plants (Phaseolus vulgaris with hollow nozzles (JA-0,5 and JA-1 and flat fan nozzle type (AXI-110015, and volume rates by air-assisted and non-assisted sprayers, a completely randomized experiment was carried out using copper ion as a tracer to the evaluation of the deposits. At 26 days after emergence, artificial targets were positioned on the upper and under-side of the leaflets, on the top and bottom parts of the same plants under spray boom. For the application of tracer solution it was used a fourteen meter boom sprayer with and without air-assistance at 60 and 100 L.ha-1 of volume rates. The air flow was 50% of the maximum fan rotation. After application, targets were individually washed with an

  2. Optical properties of electron-beam deposited quaternary Se86-xTe10Sb4Bix (0 ≤ x ≤ 8) chalcogenide alloys

    Science.gov (United States)

    Nyakotyo, H.; Sathiaraj, T. S.; Muchuweni, E.

    2017-09-01

    Amorphous thin films of Se86-xTe10Sb4Bix (x = 0, 2, 4, 6 and 8) were synthesized by electron-beam deposition of the premelt quenched bulk samples. Swanepoel's standard envelope method was used to determine optical properties from spectrophotometric measurements in the UV-VIS-NIR spectral region. Tauc's extrapolation method and Wemple-Didomenico single oscillator model where used to determine the optical band gap energy (Egopt) in the region where the absorption coefficient α ≥ 104 cm-1. The values of Egopt decreased with increasing Bi additive. The complex dielectric constant (ε), Urbach energy (Eu), optical conductivity (σ), plasma frequency (ωP), single oscillator parameters (Eo and Ed) and lattice dielectric constant (εL) were determined. The changes noticed in optical parameters with Bi content were explained on the basis of chemical bond approach, increased defect states and increased density of localized states in the mobility gap.

  3. Thickness-modulated tungsten-carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields.

    Science.gov (United States)

    Serrano, Ismael García; Sesé, Javier; Guillamón, Isabel; Suderow, Hermann; Vieira, Sebastián; Ibarra, Manuel Ricardo; De Teresa, José María

    2016-01-01

    We report efficient vortex pinning in thickness-modulated tungsten-carbon-based (W-C) nanostructures grown by focused ion beam induced deposition (FIBID). By using FIBID, W-C superconducting films have been created with thickness modulation properties exhibiting periodicity from 60 to 140 nm, leading to a strong pinning potential for the vortex lattice. This produces local minima in the resistivity up to high magnetic fields (2.2 T) in a broad temperature range due to commensurability effects between the pinning potential and the vortex lattice. The results show that the combination of single-step FIBID fabrication of superconducting nanostructures with built-in artificial pinning landscapes and the small intrinsic random pinning potential of this material produces strong periodic pinning potentials, maximizing the opportunities for the investigation of fundamental aspects in vortex science under changing external stimuli (e.g., temperature, magnetic field, electrical current).

  4. Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition

    Science.gov (United States)

    Browne, David A.; Fireman, Micha N.; Mazumder, Baishakhi; Kuritzky, Leah Y.; Wu, Yuh-Renn; Speck, James S.

    2017-02-01

    The results of vertical transport through AlGaN heterobarriers are presented for ammonia molecular beam epitaxy (NH3-MBE) on c-plane GaN on sapphire templates and on m-plane bulk GaN substrates, as well as by metalorganic chemical vapor deposition (MOCVD) on m-plane bulk GaN substrates. Experiments were performed to determine the role of the AlGaN alloy as an effective barrier to vertical transport, which is an essential component of both optoelectronic and power electronic devices. The alloy composition, thickness, and doping levels of the AlGaN layers, as well as substrate orientation, were systematically varied to examine their influence on electron transport. Atom probe tomography (APT) was used to directly determine the alloy composition at the atomic scale to reveal the presence of random alloy fluctuations which provides insight into the nature of the observed transport.

  5. Characterization of ion beam sputtered deposited W/Si multilayers by grazing incidence x-ray diffraction and x-ray reflectivity technique

    Science.gov (United States)

    Dhawan, Rajnish; Rai, Sanjay

    2016-05-01

    W/Si multilayers four samples have been deposited on silicon substrate using ion beam sputtering system. Thickness of tungsten (W) varies from around 10 Å to 40 Å while the silicon (Si) thickness remains constant at around 30 Å in multilayers [W-Si]x4. The samples have been characterized by grazing incidence X-ray diffraction (GIXRD) and X-ray reflectivity technique (XRR). GIXRD study shows the crystalline behaviour of W/Si multilayer by varying W thickness and it is found that above 20 Å the W film transform from amorphous to crystalline phase and X-ray reflectivity data shows that the roughnesses of W increases on increasing the W thicknesses in W/Si multilayers.

  6. Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal - oxide - semiconductor field-effect transistors: Effective electron mobility

    International Nuclear Information System (INIS)

    Ragnarsson, L.-A degree.; Guha, S.; Copel, M.; Cartier, E.; Bojarczuk, N. A.; Karasinski, J.

    2001-01-01

    We report on high effective mobilities in yttrium-oxide-based n-channel metal - oxide - semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y 2 O 3 on top of a thin layer of interfacial SiO 2 . The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO 2 -based MOSFETs at higher fields with peak mobilities at approximately 210 cm 2 /Vs. [copyright] 2001 American Institute of Physics

  7. Beam Energy Deposition from PS Booster and Production Rates of Selected Medical Radioisotopes in the CERN-MEDICIS Target

    OpenAIRE

    Gonsalves, Basil; Barlow, Roger; Dos Santos Augusto, Ricardo Manuel; Lee, Sangcheol; Stora, Thierry

    2016-01-01

    CERN-MEDICIS uses the scattered (ca. 90%) 1.4 GeV, 2 uA protons delivered by the PS Booster to the ISOLDE target, which would normally end up in the beam dump. After irradiation, the MEDICIS target is transported back to an offline isotope mass separator, where the produced isotopes are mass separated, and are then collected. The required medical radioisotopes are later chemically separated in the class A laboratory. The radioisotopes are transported to partner hospitals for processing and pr...

  8. Double-ceramic-layer thermal barrier coatings of La{sub 2}Zr{sub 2}O{sub 7}/YSZ deposited by electron beam-physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu Zhenhua [State Key Laboratory of Rare Earth Resources Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Beijing Institute of Aeronautical Materials, Beijing 100095 (China); He Limin; Mu Rende [Beijing Institute of Aeronautical Materials, Beijing 100095 (China); Zhong Xinghua; Zhang Yanfei; Zhang Jiangfeng [State Key Laboratory of Rare Earth Resources Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Cao Xueqiang [State Key Laboratory of Rare Earth Resources Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)], E-mail: xcao@ciac.jl.cn

    2009-04-03

    Double-ceramic-layer (DCL) thermal barrier coatings (TBCs) of La{sub 2}Zr{sub 2}O{sub 7} (LZ) and yttria stabilized zirconia (YSZ) were deposited by electron beam-physical vapor deposition (EB-PVD). The composition, crystal structure, surface and cross-sectional morphologies and cyclic oxidation behavior of the DCL coating were studied. Both the X-ray diffraction (XRD) and thermogravimetric-differential thermal analysis (TG-DTA) prove that LZ and YSZ have good chemical applicability to form a DCL coating. The thermal cycling test at 1373 K in an air furnace indicates the DCL coating has a much longer lifetime than the single layer LZ coating, and even longer than that of the single layer YSZ coating. The failure of the DCL coating is a result of both the bond coat oxidation and the thermal strain between bond coat and ceramic layer generated by the thermal expansion mismatch. Additionally, the compressive stress initiated during cooling is also an important factor to control the cleavage of the interface between the LZ and YSZ coatings. Since no single material that has been studied so far satisfies all the requirements for high temperature TBCs, DCL coating is an important development direction of TBCs.

  9. Identification and roles of nonstoichiometric oxygen in amorphous Ta{sub 2}O{sub 5} thin films deposited by electron beam and sputtering processes

    Energy Technology Data Exchange (ETDEWEB)

    Mannequin, Cedric, E-mail: MANNEQUIN.Cedricromuald@nims.go.jp [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Tsuruoka, Tohru [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Hasegawa, Tsuyoshi [Department of Applied Physics, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); Aono, Masakazu [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2016-11-01

    Highlights: • A detail study of the composition and morphology of amorphous tantalum oxide films obtained by electron-beam evaporation and radio-frequency sputtering is carried out. • The mechanisms for moisture absorption by tantalum oxides are proposed. • Deposition-dependent high oxygen stoichiometry of the films is revealed. • Formations of dangling bonds, hydroxyls groups and bidendate water bridges are identified to support the moisture absorption. - Abstract: The morphology and composition of tantalum oxide (Ta{sub 2}O{sub 5}) thin films prepared by electron-beam (EB) evaporation and radio-frequency sputtering (SP) were investigated by grazing incidence X-ray diffraction (GIXRD), X-ray reflectometry (XRR), atomic force microscopy, Fourier transformed infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS). GIXRD revealed an amorphous nature for both films, and XRR showed that the density of the Ta{sub 2}O{sub 5}-EB films was lower than that of the Ta{sub 2}O{sub 5}-SP films; both films have lower density than the bulk value. A larger amount of molecular water and peroxo species were detected for the Ta{sub 2}O{sub 5}-EB films by FTIR performed in ambient atmosphere. XPS analyses performed in vacuum confirmed the presence of hydroxyl groups, but no trace of chemisorbed molecular water was detected. In addition, a higher oxygen nonstoichiometry (higher O/Ta ratio) was found for the EB films. From these results, we conclude that the oxygen nonstoichiometry of the EB film accounted for its lower density and higher amount of absorbed molecular water. The results also suggest the importance of understanding the dependence of the structural and chemical properties of thin amorphous oxide films on the deposition process.

  10. Low Conductive Thermal Barrier Coatings Produced by Ion Beam Assisted EB-PVD with Controlled Porosity, Microstructure Refinement and Alloying Additions for High Temperature Applications

    Science.gov (United States)

    Wolfe, Douglas E.; Singh, Jogender

    2005-01-01

    Various advanced Hafnia-based thermal barrier coatings (TBC) were applied on nickel-based superalloy coupons by electron beam physical vapor deposition. In addition, microstructural modifications to the coating material were made in an effort to reduce the thermal conductivity of the coating materials. Various processing parameters and coating system modifications were made in order to deposit the alloyed TBC with the desired microstructure and thus coating performance, some of which include applying coatings at substrate temperatures of 1150 C on both PtAl and CoNiCrAlY bond coated samples, as well as using 8YSZ as a bond layer. In addition, various characterization techniques including thermal cyclic tests, scanning electron microscopy, x-ray diffraction, thermal conductivity, and reflectivity measurements were performed. Although the coating microstructure was never fully optimized due to funding being cut short, significant reductions in thermal conductivity were accomplished through both chemistry changes (composition) and microstructural modifications.

  11. Deposition of silica protected luminescent layers of Eu:GdVO{sub 4} nanoparticles assisted by atmospheric pressure plasma jet

    Energy Technology Data Exchange (ETDEWEB)

    Moretti, Elisa, E-mail: elisa.moretti@unive.it [Dipartimento di Scienze Molecolari e Nanosistemi, Università Ca' Foscari Venezia, INSTM Venice Research Unit, Via Torino 155/B, 30172 Mestre, Venezia (Italy); Pizzol, Giorgia [Dipartimento di Scienze Molecolari e Nanosistemi, Università Ca' Foscari Venezia, INSTM Venice Research Unit, Via Torino 155/B, 30172 Mestre, Venezia (Italy); Fantin, Marina; Enrichi, Francesco; Scopece, Paolo [Nanofab-Veneto Nanotech, Via delle Industrie 5, 30175 Marghera, Venezia (Italy); Nuñez, Nuria O.; Ocaña, Manuel [Instituto de Ciencia de Materiales de Sevilla, CSIC-US, Americo Vespucio 49, 41092, Isla de la Cartuja, Sevilla (Spain); Benedetti, Alvise [Dipartimento di Scienze Molecolari e Nanosistemi, Università Ca' Foscari Venezia, INSTM Venice Research Unit, Via Torino 155/B, 30172 Mestre, Venezia (Italy); Polizzi, Stefano [Dipartimento di Scienze Molecolari e Nanosistemi, Università Ca' Foscari Venezia, INSTM Venice Research Unit, Via Torino 155/B, 30172 Mestre, Venezia (Italy); Centro di Microscopia Elettronica “Giovanni Stevanato”, Università Ca' Foscari Venezia, Via Torino 155/B, 30172 Mestre, Venezia (Italy)

    2016-01-01

    Eu:GdVO{sub 4} nanophosphors with an average size of 60 nm, synthesized by a facile solvothermal method, were deposited on monocrystalline silicon wafers by a spray-coating technique with artworks anti-counterfeiting applications in mind. Atmospheric pressure plasma jet (APPJ) was used to deposit a silica-based layer on top of the nanometric luminescent layer, in order to improve its adhesion to the substrate and to protect it from the environment. The nanophosphors were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Coating composition was investigated by Fourier transform infrared spectroscopy (FT-IR) and its morphology was characterized by scanning electron microscopy (FEG-SEM). The film thickness was evaluated by means of ellipsometry and adhesion was estimated by a peeling test. Luminescent properties of the nanophosphors deposited and fixed on silicon wafers were also measured. The whole layer resulted well-adhered to the silicon substrate, transparent and undetectable in the presence of visible light, but easily activated by UV light source. - Highlights: • Luminescent films were obtained by spray deposition of Eu:GdVO{sub 4} nanophosphors. • Plasma jet deposition of SiO{sub 2} fixed the nanophosphors on the substrate. • Optical properties of nanophosphors were preserved after deposition-fixing process. • Films well-adhered to the substrate, even after a scotch tape peeling test and a scratch test.

  12. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications

    KAUST Repository

    Alias, Mohd Sharizal

    2015-12-22

    The high optical gain and absorption of organic–inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption.

  13. Estimation of the dose deposited by electron beams in radiotherapy in voxelised phantoms using the Monte Carlo simulation platform GATE based on GEANT4 in a grid environment

    International Nuclear Information System (INIS)

    Perrot, Y.

    2011-01-01

    Radiation therapy treatment planning requires accurate determination of absorbed dose in the patient. Monte Carlo simulation is the most accurate method for solving the transport problem of particles in matter. This thesis is the first study dealing with the validation of the Monte Carlo simulation platform GATE (GEANT4 Application for Tomographic Emission), based on GEANT4 (Geometry And Tracking) libraries, for the computation of absorbed dose deposited by electron beams. This thesis aims at demonstrating that GATE/GEANT4 calculations are able to reach treatment planning requirements in situations where analytical algorithms are not satisfactory. The goal is to prove that GATE/GEANT4 is useful for treatment planning using electrons and competes with well validated Monte Carlo codes. This is demonstrated by the simulations with GATE/GEANT4 of realistic electron beams and electron sources used for external radiation therapy or targeted radiation therapy. The computed absorbed dose distributions are in agreement with experimental measurements and/or calculations from other Monte Carlo codes. Furthermore, guidelines are proposed to fix the physics parameters of the GATE/GEANT4 simulations in order to ensure the accuracy of absorbed dose calculations according to radiation therapy requirements. (author)

  14. Composite films prepared by plasma ion-assisted deposition (IAD) for design and fabrication of antireflection coatings in visible and near-infrared spectral regions

    Science.gov (United States)

    Tsai, Rung-Ywan; Ho, Fang C.

    1994-11-01

    Ion-assisted deposition (IAD) processes configured with a well-controlled plasma source at the center base of a vacuum chamber, which accommodates two independent e-gun sources, is used to deposition TiO2MgF2 and TiO2-SiO2 composite films of selected component ratios. Films prepared by this technology are found durable, uniform, and nonabsorbing in visible and near-IR regions. Single- and multilayer antireflection coatings with refractive index from 1.38 to 2.36 at (lambda) equals 550 nm are presented. Methods of enhancement in optical performance of these coatings are studied. The advantages of AR coatings formed by TiO2-MgF2 composite films over those similar systems consisting of TiO2-SiO2 composite films in both visible and near-IR regions are also presented.

  15. Electrochemically assisted deposition of hydroxyapatite on Ti6Al4V substrates covered by CVD diamond films - Coating characterization and first cell biological results.

    Science.gov (United States)

    Strąkowska, Paulina; Beutner, René; Gnyba, Marcin; Zielinski, Andrzej; Scharnweber, Dieter

    2016-02-01

    Although titanium and its alloys are widely used as implant material for orthopedic and dental applications they show only limited corrosion stability and osseointegration in different cases. The aim of the presented research was to develop and characterize a novel surface modification system from a thin diamond base layer and a hydroxyapatite (HAp) top coating deposited on the alloy Ti6Al4V widely used for implants in contact with bone. This coating system is expected to improve both the long-term corrosion behavior and the biocompatibility and bioactivity of respective surfaces. The diamond base films were obtained by Microwave Plasma Assisted Chemical Vapor Deposition (MW-PACVD); the HAp coatings were formed in aqueous solutions by electrochemically assisted deposition (ECAD) at varying polarization parameters. Scanning electron microscopy (SEM), Raman microscopy, and electrical conductivity measurements were applied to characterize the generated surface states; the calcium phosphate coatings were additionally chemically analyzed for their composition. The biological properties of the coating system were assessed using hMSC cells analyzing for cell adhesion, proliferation, and osteogenic differentiation. Varying MW-PACVD process conditions resulted in composite coatings containing microcrystalline diamond (MCD/Ti-C), nanocrystalline diamond (NCD), and boron-doped nanocrystalline diamond (B-NCD) with the NCD coatings being dense and homogeneous and the B-NCD coatings showing increased electrical conductivity. The ECAD process resulted in calcium phosphate coatings from stoichiometric and non-stoichiometric HAp. The deposition of HAp on the B-NCD films run at lower cathodic potentials and resulted both in the highest coating mass and the most homogenous appearance. Initial cell biological investigations showed an improved cell adhesion in the order B-NCD>HAp/B-NCD>uncoated substrate. Cell proliferation was improved for both investigated coatings whereas ALP

  16. Study on copper phthalocyanine and perylene-based ambipolar organic light-emitting field-effect transistors produced using neutral beam deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Dae-Kyu; Oh, Jeong-Do; Shin, Eun-Sol; Seo, Hoon-Seok; Choi, Jong-Ho, E-mail: jhc@korea.ac.kr [Department of Chemistry, Research Institute for Natural Sciences, Korea University, Anam-Dong, Seoul 136-701 (Korea, Republic of)

    2014-04-28

    The neutral cluster beam deposition (NCBD) method has been applied to the production and characterization of ambipolar, heterojunction-based organic light-emitting field-effect transistors (OLEFETs) with a top-contact, multi-digitated, long-channel geometry. Organic thin films of n-type N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide and p-type copper phthalocyanine were successively deposited on the hydroxyl-free polymethyl-methacrylate (PMMA)-coated SiO{sub 2} dielectrics using the NCBD method. Characterization of the morphological and structural properties of the organic active layers was performed using atomic force microscopy and X-ray diffraction. Various device parameters such as hole- and electron-carrier mobilities, threshold voltages, and electroluminescence (EL) were derived from the fits of the observed current-voltage and current-voltage-light emission characteristics of OLEFETs. The OLEFETs demonstrated good field-effect characteristics, well-balanced ambipolarity, and substantial EL under ambient conditions. The device performance, which is strongly correlated with the surface morphology and the structural properties of the organic active layers, is discussed along with the operating conduction mechanism.

  17. Simulation of dose deposition in heterogeneities in the human body, using the Penelope code for photons beams of energies of a linear accelerator

    International Nuclear Information System (INIS)

    Cardena R, A. R.; Vega R, J. L.; Apaza V, D. G.

    2015-10-01

    The progress in cancer treatment systems in heterogeneities of human body has had obstacles by the lack of a suitable experimental model test. The only option is to develop simulated theoretical models that have the same properties in interfaces similar to human tissues, to know the radiation behavior in the interaction with these materials. In this paper we used the Monte Carlo method by Penelope code based solely on studies for the cancer treatment as well as for the calibration of beams and their various interactions in mannequins. This paper also aims the construction, simulation and characterization of an equivalent object to the tissues of the human body with various heterogeneities, we will later use to control and plan experientially doses supplied in treating tumors in radiotherapy. To fulfill the objective we study the ionizing radiation and the various processes occurring in the interaction with matter; understanding that to calculate the dose deposited in tissues interfaces (percentage depth dose) must be taken into consideration aspects such as the deposited energy, irradiation fields, density, thickness, tissue sensitivity and other items. (Author)

  18. Study on the electrical and optical properties of Ag/Al-doped ZnO coatings deposited by electron beam evaporation

    International Nuclear Information System (INIS)

    Sahu, D.R.; Lin, S.-Y.; Huang, J.-L.

    2007-01-01

    A layer of silver was deposited onto the surface of glass substrates, coated with AZO (Al-doped ZnO), to form Ag/AZO film structures, using e-beam evaporation techniques. The electrical and optical properties of AZO, Ag and Ag/AZO film structures were studied. The deposition of Ag layer on the surface of AZO films resulted in lowering the effective electrical resistivity with a slight reduction of their optical transmittance. Ag (11 nm)/AZO (25 nm) film structure, with an accuracy of ±0.5 nm for the thickness shows a sheet resistance as low as 5.6 ± 0.5 Ω/sq and a transmittance of about 66 ± 2%. A coating consisting of AZO (25 nm)/Ag (11 nm)/AZO (25 nm) trilayer structure, exhibits a resistance of 7.7 ± 0.5 Ω/sq and a high transmittance of 85 ± 2%. The coatings have satisfactory properties of low resistance, high transmittance and highest figure of merit for application in optoelectronics devices including flat displays, thin films transistors and solar cells as transparent conductive electrodes

  19. 3D assembly of carbon nanotubes for fabrication of field-effect transistors through nanomanipulation and electron-beam-induced deposition

    Science.gov (United States)

    Yu, Ning; Shi, Qing; Nakajima, Masahiro; Wang, Huaping; Yang, Zhan; Sun, Lining; Huang, Qiang; Fukuda, Toshio

    2017-10-01

    Three-dimensional carbon nanotube field-effect transistors (3D CNTFETs) possess predictable characteristics that rival those of planar CNTFETs and Si-based MOSFETs. However, due to the lack of a reliable assembly technology, they are rarely reported on, despite the amount of attention they receive. To address this problem, we propose the novel concept of a 3D CNTFET and develop its assembly strategy based on nanomanipulation and the electron-beam-induced deposition (EBID) technique inside a scanning electron microscope (SEM). In particular, the electrodes in our transistor design are three metallic cuboids of the same size, and their front, top and back surfaces are all wrapped up in CNTs. The assembly strategy is employed to build the structure through a repeated basic process of pick-up, placement, fixing and cutting of CNTs. The pick-up and placement is performed through one nanomanipulator with four degrees of freedom. Fixing is carried out through the EBID technique so as to improve the mechanical and electrical characteristics of the CNT/electrodes connection. CNT cutting is undertaken using the typical method of electrical breakdown. Experimental results showed that two CNTs were successfully assembled on the front sides of the cubic electrodes. This validates our assembly method for the 3D CNTFET. Also, when contact resistance was measured, tens of kilohms of resistance was observed at the CNT-EBID deposition-FET electrodes junction.. This manifests the electrical reliability of our assembly strategy.

  20. Hydrogen plasma enhanced alignment on CNT-STM tips grown by liquid catalyst-assisted microwave plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Tung, Fa-Kuei; Yoshimura, Masamichi; Ueda, Kazuyuki; Ohira, Yutaka; Tanji, Takayoshi

    2008-01-01

    Carbon nanotubes are grown directly on a scanning tunneling microscopy tip by liquid catalyst-assisted microwave-enhanced chemical vapor deposition, and effects of hydrogen plasma treatment on the tip have been investigated in detail by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and Raman spectroscopy. The unaligned CNTs on the as-grown tip apex have been realigned and reshaped by subsequent hydrogen plasma treatment. The diameter of CNTs is enlarged mainly due to amorphous layers being re-sputtered over their outer shells

  1. CH3NH3I treatment temperature of 70 °C in low-pressure vapor-assisted deposition for mesoscopic perovskite solar cells

    Science.gov (United States)

    Jin, Wenbin; Zou, Xiaoping; Bai, Xiao; Yang, Ying; Chen, Dan

    2018-01-01

    Herein, we report a modified vapor-assisted deposition method to fabricate CH3NH3PbI3 film at 70 °C in a vacuum drying oven. The modified method has excellent operability and expandability in preparing perovskite solar cells. The CH3NH3I treatment temperature is 130 °C or 150 °C in conventional method, but we reduced the temperature to 70 °C in the modified vapor-assisted method. Meanwhile, the quality of CH3NH3PbI3 films prepared via the modified method is superior to that of CH3NH3PbI3 films of solution-processed method.

  2. Electrochemically assisted deposition of hydroxyapatite on Ti6Al4V substrates covered by CVD diamond films — Coating characterization and first cell biological results

    Energy Technology Data Exchange (ETDEWEB)

    Strąkowska, Paulina [Gdańsk University of Technology, Mechanical Engineering Faculty (Poland); Gdańsk University of Technology, Faculty of Electronics, Telecommunications, and Informatics (Poland); Beutner, René [Max Bergmann Center, Technische Universität Dresden (Germany); Gnyba, Marcin [Gdańsk University of Technology, Faculty of Electronics, Telecommunications, and Informatics (Poland); Zielinski, Andrzej [Gdańsk University of Technology, Mechanical Engineering Faculty (Poland); Scharnweber, Dieter, E-mail: Dieter.Scharnweber@tu-dresden.de [Max Bergmann Center, Technische Universität Dresden (Germany)

    2016-02-01

    Although titanium and its alloys are widely used as implant material for orthopedic and dental applications they show only limited corrosion stability and osseointegration in different cases. The aim of the presented research was to develop and characterize a novel surface modification system from a thin diamond base layer and a hydroxyapatite (HAp) top coating deposited on the alloy Ti6Al4V widely used for implants in contact with bone. This coating system is expected to improve both the long-term corrosion behavior and the biocompatibility and bioactivity of respective surfaces. The diamond base films were obtained by Microwave Plasma Assisted Chemical Vapor Deposition (MW-PACVD); the HAp coatings were formed in aqueous solutions by electrochemically assisted deposition (ECAD) at varying polarization parameters. Scanning electron microscopy (SEM), Raman microscopy, and electrical conductivity measurements were applied to characterize the generated surface states; the calcium phosphate coatings were additionally chemically analyzed for their composition. The biological properties of the coating system were assessed using hMSC cells analyzing for cell adhesion, proliferation, and osteogenic differentiation. Varying MW-PACVD process conditions resulted in composite coatings containing microcrystalline diamond (MCD/Ti-C), nanocrystalline diamond (NCD), and boron-doped nanocrystalline diamond (B-NCD) with the NCD coatings being dense and homogeneous and the B-NCD coatings showing increased electrical conductivity. The ECAD process resulted in calcium phosphate coatings from stoichiometric and non-stoichiometric HAp. The deposition of HAp on the B-NCD films run at lower cathodic potentials and resulted both in the highest coating mass and the most homogenous appearance. Initial cell biological investigations showed an improved cell adhesion in the order B-NCD > HAp/B-NCD > uncoated substrate. Cell proliferation was improved for both investigated coatings whereas ALP

  3. Electrochemically assisted deposition of hydroxyapatite on Ti6Al4V substrates covered by CVD diamond films — Coating characterization and first cell biological results

    International Nuclear Information System (INIS)

    Strąkowska, Paulina; Beutner, René; Gnyba, Marcin; Zielinski, Andrzej; Scharnweber, Dieter

    2016-01-01

    Although titanium and its alloys are widely used as implant material for orthopedic and dental applications they show only limited corrosion stability and osseointegration in different cases. The aim of the presented research was to develop and characterize a novel surface modification system from a thin diamond base layer and a hydroxyapatite (HAp) top coating deposited on the alloy Ti6Al4V widely used for implants in contact with bone. This coating system is expected to improve both the long-term corrosion behavior and the biocompatibility and bioactivity of respective surfaces. The diamond base films were obtained by Microwave Plasma Assisted Chemical Vapor Deposition (MW-PACVD); the HAp coatings were formed in aqueous solutions by electrochemically assisted deposition (ECAD) at varying polarization parameters. Scanning electron microscopy (SEM), Raman microscopy, and electrical conductivity measurements were applied to characterize the generated surface states; the calcium phosphate coatings were additionally chemically analyzed for their composition. The biological properties of the coating system were assessed using hMSC cells analyzing for cell adhesion, proliferation, and osteogenic differentiation. Varying MW-PACVD process conditions resulted in composite coatings containing microcrystalline diamond (MCD/Ti-C), nanocrystalline diamond (NCD), and boron-doped nanocrystalline diamond (B-NCD) with the NCD coatings being dense and homogeneous and the B-NCD coatings showing increased electrical conductivity. The ECAD process resulted in calcium phosphate coatings from stoichiometric and non-stoichiometric HAp. The deposition of HAp on the B-NCD films run at lower cathodic potentials and resulted both in the highest coating mass and the most homogenous appearance. Initial cell biological investigations showed an improved cell adhesion in the order B-NCD > HAp/B-NCD > uncoated substrate. Cell proliferation was improved for both investigated coatings whereas ALP

  4. Label-free cellular structure imaging with 82 nm lateral resolution using an electron-beam excitation-assisted optical microscope.

    Science.gov (United States)

    Fukuta, Masahiro; Masuda, Yuriko; Inami, Wataru; Kawata, Yoshimasa

    2016-07-25

    We present label-free and high spatial-resolution imaging for specific cellular structures using an electron-beam excitation-assisted optical microscope (EXA microscope). Images of the actin filament and mitochondria of stained HeLa cells, obtained by fluorescence and EXA microscopy, were compared to identify cellular structures. Based on these results, we demonstrated the feasibility of identifying label-free cellular structures at a spatial resolution of 82 nm. Using numerical analysis, we calculated the imaging depth region and determined the spot size of a cathodoluminescent (CL) light source to be 83 nm at the membrane surface.

  5. In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hestroffer, K.; Daudin, B. [CEA-CNRS Group (Nanophysique et Semiconducteurs), Universite Joseph Fourier and CEA Grenoble, INAC, SP2M, 17 rue des Martyrs, 38054 Grenoble (France); Leclere, C.; Renevier, H. [Laboratoire des Materiaux et du Genie Physique, Grenoble INP--MINATEC, 3 parvis L. Neel, 38016 Grenoble (France); Cantelli, V. [' ' Nanostructures et Rayonnement Synchrotron' ' Group, CEA Grenoble, INAC, SP2M, 17 rue des Martyrs, 38054 Grenoble (France); Fondation Nanosciences, 23 rue des Martyrs, 38000 Grenoble (France); Bougerol, C. [CEA-CNRS Group, ' ' Nanophysique et Semiconducteurs' ' , Institut Neel, CNRS and Universite Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France)

    2012-05-21

    Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy is studied through a combination of two in situ tools: grazing incidence x-ray diffraction and reflection high energy electron diffraction. Growth on bare Si(111) and on AlN/Si(111) is compared. A significantly larger delay at nucleation is observed for nanowires grown on bare Si(111). The difference in the nucleation delay is correlated to a dissimilarity of chemical reactivity between Al and Ga with nitrided Si(111).

  6. Effects of oxygen addition in reactive cluster beam deposition of tungsten by magnetron sputtering with gas aggregation

    Energy Technology Data Exchange (ETDEWEB)

    Polášek, J., E-mail: xpolasekj@seznam.cz [Department of Surface and Plasma Science, Faculty of Mathematics and Physic, Charles University, V Holešovičkách 2, Prague 8, CZ-18000 (Czech Republic); Mašek, K. [Department of Surface and Plasma Science, Faculty of Mathematics and Physic, Charles University, V Holešovičkách 2, Prague 8, CZ-18000 (Czech Republic); Marek, A.; Vyskočil, J. [HVM Plasma Ltd., Na Hutmance 2, Prague 5, CZ-158 00 (Czech Republic)

    2015-09-30

    In this work, we investigated the possibilities of tungsten and tungsten oxide nanoclusters generation by means of non-reactive and reactive magnetron sputtering with gas aggregation. It was found that in pure argon atmosphere, cluster aggregation proceeded in two regimes depending on argon pressure in the aggregation chamber. At the lower pressure, cluster generation was dominated by two-body collisions yielding larger clusters (about 5.5 nm in diameter) at lower rate. At higher pressures, cluster generation was dominated by three-body collisions yielding smaller clusters (3–4 nm in diameter) at higher rate. The small amount of oxygen admixture in the aggregation chamber had considerable influence on cluster aggregation process. At certain critical pressure, the presence of oxygen led to the raise of deposition rate and cluster size. Resulting clusters were composed mostly of tungsten trioxide. The oxygen pressure higher than critical led to the target poisoning and the decrease in the sputtering rate. Critical oxygen pressure decreased with increasing argon pressure, suggesting that cluster aggregation process was influenced by atomic oxygen species (namely, O{sup −} ion) generated by oxygen–argon collisions in the magnetron plasma. - Highlights: • Formation of tungsten and tungsten oxide clusters was observed. • Two modes of cluster aggregation in pure argon atmosphere were found. • Dependence of cluster deposition speed and size on oxygen admixture was observed. • Changes of dependence on oxygen with changing argon pressure were described.

  7. Characterization and microstructure control of sheathed superconducting bismuth strontium calcium copper oxide thick films by AC-electric-field assisted electrophoretic deposition

    Science.gov (United States)

    Yue, Cheng-Feng Joel

    The goal of this research is to fabricate and characterize the Ag-sheathed BiSrCaCuO (BSCCO) tapes using a combination of alternating current electric field assisted electrophoretic deposition (ACEPD) and thermomechanical consolidation (TMC) technique. In this method, an alternating current (AC) electric field was applied in conjunction to the direct current (DC) electric field. This AC field parallel to substrate surface was found to assist c-axis texturing of BSCCO film. Higher uni-axial pressure and temperature for thermomechanical consolidation enhance and reduce the size and number density of micro-pores. The effect of processing variables on the microstructure of BSCCO tapes was investigated in detail. The high AC field operating at high frequencies and low DC field were found to improve the c-axis texture. To improve the c-axis texture, several novel concepts were investigated in this research, namely, (i) AC-assisted EPD and (ii) thermomechanical consolidation. Such improved green film microstructure led to better superconductivity stability. The introduction of Ag-particle interlayer into the middle of BSCCO film forms the strong two-dimensional Ag-BSCCO composite, leading to the improved fracture strength and adhesion. T-peel fracture test, scanning electron microscopy, x-ray diffractometry, and SQUID magnetometry characterization results were correlated to c-axis texturing enhancement and BSCCO tape/wire processing parameters. The effects of superconductivity changes by pre-sintering microstructure control with thermomechanical consolidation parameters were discussed. The AC field assisted electrophoretic deposition mechanism for c-axis texture enhancement was modeled by simulating the trajectory of anisotropic particle in suspension. Differential equations to demonstrate the angular motion behavior of the particle was developed. Good agreement was observed before the experimental results and numerical calculations.

  8. Helicon plasma generator-assisted surface conversion ion source for the production of H(-) ion beams at the Los Alamos Neutron Science Center.

    Science.gov (United States)

    Tarvainen, O; Rouleau, G; Keller, R; Geros, E; Stelzer, J; Ferris, J

    2008-02-01

    The converter-type negative ion source currently employed at the Los Alamos Neutron Science Center (LANSCE) is based on cesium enhanced surface production of H(-) ion beams in a filament-driven discharge. In this kind of an ion source the extracted H(-) beam current is limited by the achievable plasma density which depends primarily on the electron emission current from the filaments. The emission current can be increased by increasing the filament temperature but, unfortunately, this leads not only to shorter filament lifetime but also to an increase in metal evaporation from the filament, which deposits on the H(-) converter surface and degrades its performance. Therefore, we have started an ion source development project focused on replacing these thermionic cathodes (filaments) of the converter source by a helicon plasma generator capable of producing high-density hydrogen plasmas with low electron energy. In our studies which have so far shown that the plasma density of the surface conversion source can be increased significantly by exciting a helicon wave in the plasma, and we expect to improve the performance of the surface converter H(-) ion source in terms of beam brightness and time between services. The design of this new source and preliminary results are presented, along with a discussion of physical processes relevant for H(-) ion beam production with this novel design. Ultimately, we perceive this approach as an interim step towards our long-term goal, combining a helicon plasma generator with an SNS-type main discharge chamber, which will allow us to individually optimize the plasma properties of the plasma cathode (helicon) and H(-) production (main discharge) in order to further improve the brightness of extracted H(-) ion beams.

  9. Copper-vapor-assisted chemical vapor deposition for high-quality and metal-free single-layer graphene on amorphous SiO2 substrate.

    Science.gov (United States)

    Kim, Hyungki; Song, Intek; Park, Chibeom; Son, Minhyeok; Hong, Misun; Kim, Youngwook; Kim, Jun Sung; Shin, Hyun-Joon; Baik, Jaeyoon; Choi, Hee Cheul

    2013-08-27

    We report that high-quality single-layer graphene (SLG) has been successfully synthesized directly on various dielectric substrates including amorphous SiO2/Si by a Cu-vapor-assisted chemical vapor deposition (CVD) process. The Cu vapors produced by the sublimation of Cu foil that is suspended above target substrates without physical contact catalyze the pyrolysis of methane gas and assist nucleation of graphene on the substrates. Raman spectra and mapping images reveal that the graphene formed on a SiO2/Si substrate is almost defect-free and homogeneous single layer. The overall quality of graphene grown by Cu-vapor-assisted CVD is comparable to that of the graphene grown by regular metal-catalyzed CVD on a Cu foil. While Cu vapor induces the nucleation and growth of SLG on an amorphous substrate, the resulting SLG is confirmed to be Cu-free by synchrotron X-ray photoelectron spectroscopy. The SLG grown by Cu-vapor-assisted CVD is fabricated into field effect transistor devices without transfer steps that are generally required when SLG is grown by regular CVD process on metal catalyst substrates. This method has overcome two important hurdles previously present when the catalyst-free CVD process is used for the growth of SLG on fused quartz and hexagonal boron nitride substrates, that is, high degree of structural defects and limited size of resulting graphene, respectively.

  10. Silicon-substituted hydroxyapatite coating with Si content on the nanotube-formed Ti–Nb–Zr alloy using electron beam-physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Yong-Hoon [Division of Restorative, Prosthetic and Primary Care Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave., Columbus, OH (United States); Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Restorative, Prosthetic and Primary Care Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave., Columbus, OH (United States)

    2013-11-01

    The purpose of this study was to investigate the electrochemical characteristics of silicon-substituted hydroxyapatite coatings on the nanotube-formed Ti–35Nb–10Zr alloy. The silicon-substituted hydroxyapatite (Si–HA) coatings on the nanotube structure were deposited by electron beam-physical vapor deposition and anodization methods, and biodegradation properties were analyzed by potentiodynamic polarization and electrochemical impedance spectroscopy measurement. The surface characteristics were analyzed by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction (XRD). The Si–HA layers were deposited with rough features having highly ordered nanotube structures on the titanium alloy substrate. The thickness of the Si–HA coating was less than that of the HA coating. The XRD results confirmed that the Si–HA coating on the nanotube structure consisted of TiO{sub 2} anatase, TiO{sub 2} rutile, hydroxyapatite, and calcium phosphate silicate. The Si–HA coating surface exhibited lower I{sub corr} than the HA coating, and the polarization resistance was increased by substitution of silicon in hydroxyapatite. - Highlights: • Silicon substituted hydroxyapatite (Si–HA) was coated on nanotubular titanium alloy. • The Si–HA coating thickness was less than single hydroxyapatite (HA) coating. • Si–HA coatings consisted of TiO{sub 2}, HA, and Ca{sub 5}(PO{sub 4}){sub 2}SiO{sub 4}. • Polarization resistance of the coating was increased by Si substitution in HA.

  11. Quantitative plasma-fuel and impurity profiling in thick plasma-deposited layers by means of micro ion beam analysis and SIMS

    Energy Technology Data Exchange (ETDEWEB)

    Bykov, Igor, E-mail: igor.bykov@ee.kth.se [Fusion Pasma Physics, Royal Institute of Technology (KTH), Teknikringen 31, Stockholm 10044 (Sweden); Bergsåker, Henric; Petersson, Per [Fusion Pasma Physics, Royal Institute of Technology (KTH), Teknikringen 31, Stockholm 10044 (Sweden); Likonen, Jari [VTT, Association EURATOM-TEKES, P.O. Box 1000, Otaniemi 02044 (Finland); Possnert, Göran [Tandem Laboratory (Association EURATOM-VR), Uppsala Universitet, Box 256, Uppsala 75105 (Sweden)

    2014-08-01

    The operation of the Joint European Torus (JET) with full-carbon wall during the last decades has proven the importance of material re-deposition processes in remote areas of the tokamak. The thickness of the deposits in shadowed areas can reach 1 mm. The main constituent is carbon, with little inclusion of Inconel components. Atomic fractions Be/C and D/C can locally reach 1. Three methods were used to study thick deposits on JET divertor surfaces: (i) NRA analysis with a 15 μm wide, 3 MeV {sup 3}He ion microbeam on a polished cross section of the layer to determine the concentration distribution of D, Be and C and the distribution of Ni by particle induced X-ray emission; (ii) elastic proton scattering (EPS) from the top of the layers with a broad proton beam at 3.5 and 4.6 MeV. These methods were absolutely calibrated using thick elemental targets. (iii) Depth profiling of D, Be and Ni was done with secondary ion mass spectrometry (SIMS), sputtering the layers from the surface. The three methods are complementary. The thickest layers are accessible only by microbeam mapping of the cross sections, albeit with limited spatial resolution. The SIMS has the best depth resolution, but is difficult for absolute quantification and is limited in accessible depth. The probed depth with proton backscattering is limited to about 30 μm. The combination of all three methods provided a coherent picture of the layer composition. It was possible to correlate the SIMS profiling results to quantitative data obtained by the microbeam method.

  12. Surface morphological and photoelectrochemical studies of ZnS thin films developed from single source precursors by aerosol assisted chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ehsan, Muhammad Ali [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Peiris, T.A. Nirmal; Wijayantha, K.G. Upul [Department of Chemistry, Loughborough University, Loughborough, LE11 3TU (United Kingdom); Khaledi, Hamid [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Ming, Huang Nay [Faculty of Science, Department of Physics, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Misran, Misni; Arifin, Zainudin [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Mazhar, Muhammad, E-mail: mazhar42pk@yahoo.com [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia)

    2013-07-01

    Zinc sulphide (ZnS) thin films have been deposited on fluorine-doped tin oxide-coated conducting glass substrates at 375, 425 and 475 °C temperatures from single source adduct precursors [Zn(S{sub 2}CNCy{sub 2}){sub 2}(py)] (1) [where, Cy = cyclohexyl, py = pyridine] and [Zn{S_2CN(CH_2Ph)(Me)}{sub 2}(py)] (2) [where, Ph = Phenyl, Me = Methyl] using aerosol assisted chemical vapour deposition (AACVD). The precursor complexes have been characterized by microanalysis, infrared spectroscopy, proton nuclear magnetic resonance spectroscopy, X-ray single crystal and thermogravimetric analysis. Thermal analysis showed that both precursors (1) and (2) undergo thermal decomposition at 375 °C to produce ZnS residues. The deposited ZnS films have been characterized by X-ray diffraction and energy dispersive X-ray spectroscopy. Scanning electron microscopic studies indicated that the surface morphology of ZnS films strongly depends on the nature of the precursor and the deposition temperature, regardless of marginal variation in thermal stability of the precursors. Direct band gap energies of 3.36 and 3.40 eV have been estimated from the ultraviolet–visible spectroscopy for the ZnS films fabricated from precursors (1) and (2), respectively. The current–voltage characteristics recorded under air mass 1.5 illumination confirmed that the deposited ZnS thin films are photoactive under anodic bias conditions. Furthermore, the photoelectrochemical (PEC) results indicate that these synthesised single source precursors are suitable for obtaining ZnS thin films by AACVD method. The ZnS thin film electrode prepared in this study are very promising for solar energy conversion and optoelectronic applications. The PEC properties of ZnS electrodes prepared from (2) are superior to that of the ZnS electrode prepared from precursor (1). - Highlights: • Synthesis and characterization of zinc dithiocarbamate pyridine adducts. • ZnS photo electrodes have been fabricated using aerosol-assisted

  13. Ultrasonic-assisted fabrication of superhydrophobic ZnO nanowall ...

    Indian Academy of Sciences (India)

    2017-06-09

    Jun 9, 2017 ... electro-spinning, sputtering, nano-imprint lithography and electron beam evaporation [1]. Sonochemical technique has been recently emerging as a rapid, cost-effective technique to deposit nanostructures over diverse substrates [2–5]. Jung et al [2] demonstrated the sonication-assisted in-situ growth of.

  14. Thin films of hydrogenated amorphous carbon (a-C:H) obtained through chemical vapor deposition assisted by plasma

    International Nuclear Information System (INIS)

    Mejia H, J.A.; Camps C, E.E.; Escobar A, L.; Romero H, S.; Chirino O, S.; Muhl S, S.

    2004-01-01

    Films of hydrogenated amorphous carbon (a-C:H) were deposited using one source of microwave plasma with magnetic field (type ECR), using mixtures of H 2 /CH 4 in relationship of 80/20 and 95/05 as precursory gases, with work pressures of 4X10 -4 to 6x10 -4 Torr and an incident power of the discharge of microwaves with a constant value of 400 W. It was analyzed the influence among the properties of the films, as the deposit rate, the composition and the bonding types, and the deposit conditions, such as the flow rates of the precursory gases and the polarization voltage of the sample holders. (Author)

  15. Selective Deposition and Alignment of Single-Walled Carbon Nanotubes Assisted by Dielectrophoresis: From Thin Films to Individual Nanotubes

    Science.gov (United States)

    Li, Pengfei; Xue, Wei

    2010-06-01

    Dielectrophoresis has been used in the controlled deposition of single-walled carbon nanotubes (SWNTs) with the focus on the alignment of nanotube thin films and their applications in the last decade. In this paper, we extend the research from the selective deposition of SWNT thin films to the alignment of small nanotube bundles and individual nanotubes. Electrodes with “teeth”-like patterns are fabricated to study the influence of the electrode width on the deposition and alignment of SWNTs. The entire fabrication process is compatible with optical lithography-based techniques. Therefore, the fabrication cost is low, and the resulting devices are inexpensive. A series of SWNT solutions is prepared with concentrations ranging from 0.0125 to 0.2 mg/ml. The alignment of SWNT thin films, small bundles, and individual nanotubes is achieved under the optimized experimental conditions. The electrical properties of these samples are characterized; the linear current-voltage plots prove that the aligned SWNTs are mainly metallic nanotubes. The microscopy inspection of the samples demonstrates that the alignment of small nanotube bundles and individual nanotubes can only be achieved using narrow electrodes and low-concentration solutions. Our investigation shows that it is possible to deposit a controlled amount of SWNTs in desirable locations using dielectrophoresis.

  16. Plasma-assisted atomic layer deposition of TiO2 compact layers for flexible mesostructured perovskite solar cells

    NARCIS (Netherlands)

    Zardetto, V.; Di Giacomo, F.; Lucarelli, G.; Kessels, W.M.M.; Brown, T.M.; Creatore, M.

    2017-01-01

    In mesostructured perovskite solar cell devices, charge recombination processes at the interface between the transparent conductive oxide, perovskite and hole transport layer are suppressed by depositing an efficient compact TiO2 blocking layer. In this contribution we investigate the role of the

  17. Selective Deposition and Alignment of Single-Walled Carbon Nanotubes Assisted by Dielectrophoresis: From Thin Films to Individual Nanotubes

    Directory of Open Access Journals (Sweden)

    Li Pengfei

    2010-01-01

    Full Text Available Abstract Dielectrophoresis has been used in the controlled deposition of single-walled carbon nanotubes (SWNTs with the focus on the alignment of nanotube thin films and their applications in the last decade. In this paper, we extend the research from the selective deposition of SWNT thin films to the alignment of small nanotube bundles and individual nanotubes. Electrodes with “teeth”-like patterns are fabricated to study the influence of the electrode width on the deposition and alignment of SWNTs. The entire fabrication process is compatible with optical lithography-based techniques. Therefore, the fabrication cost is low, and the resulting devices are inexpensive. A series of SWNT solutions is prepared with concentrations ranging from 0.0125 to 0.2 mg/ml. The alignment of SWNT thin films, small bundles, and individual nanotubes is achieved under the optimized experimental conditions. The electrical properties of these samples are characterized; the linear current–voltage plots prove that the aligned SWNTs are mainly metallic nanotubes. The microscopy inspection of the samples demonstrates that the alignment of small nanotube bundles and individual nanotubes can only be achieved using narrow electrodes and low-concentration solutions. Our investigation shows that it is possible to deposit a controlled amount of SWNTs in desirable locations using dielectrophoresis.

  18. Nitrogen doping of ZnO thin films grown by plasma-assisted pulsed-laser deposition

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Duclére, J.-R.; McGlynn, E.; Henry, M.O.; O´Haire, R.; Mosnier, J.-P.

    2007-01-01

    Roč. 59, - (2007), s. 505-509 ISSN 0953-8984 Institutional research plan: CEZ:AV0Z10100522 Keywords : pulsed laser deposition * ZnO * doping * electron cyclotron resonance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.886, year: 2007

  19. Graphene synthesis by laser-assisted chemical vapor deposition on Ni plate and the effect of process parameters on uniform graphene growth

    International Nuclear Information System (INIS)

    Jiang, Juan; Lin, Zhe; Ye, Xiaohui; Zhong, Minlin; Huang, Ting; Zhu, Hongwei

    2014-01-01

    A fast, simple technique was developed to fabricate few-layer graphene films at ambient pressure and room temperature by laser-assisted chemical vapor deposition on polycrystalline Ni plates. Laser scanning speed was found as the most important factor in the production of few-layer graphene. The quality of graphene films was controlled by varying the laser power. Uniform graphene ribbons with a width of 1.5 mm and a length of 16 mm were obtained at a scanning speed of 1.3 mm/s and a laser power of 600 W. The developed technique provided a promising application of a high-power laser system to fabricate a graphene film. - Highlights: • Uniform few-layer graphene was fabricated at room temperature and ambient conditions. • Laser-assisted chemical vapor deposition was used to grow the layers in a few seconds. • The effect of process parameters on graphene growth was discussed. • This cost effective method could facilitate the integration of graphene in electronic devices

  20. High-resolution, label-free imaging of living cells with direct electron-beam-excitation-assisted optical microscopy.

    Science.gov (United States)

    Nawa, Yasunori; Inami, Wataru; Lin, Sheng; Kawata, Yoshimasa; Terakawa, Susumu

    2015-06-01

    High spatial resolution microscope is desired for deep understanding of cellular functions, in order to develop medical technologies. We demonstrate high-resolution imaging of un-labelled organelles in living cells, in which live cells on a 50 nm thick silicon nitride membrane are imaged by autofluorescence excited with a focused electron beam through the membrane. Electron beam excitation enables ultrahigh spatial resolution imaging of organelles, such as mitochondria, nuclei, and various granules. Since the autofluorescence spectra represent molecular species, this microscopy allows fast and detailed investigations of cellular status in living cells.

  1. Microstructural characterization of Ti-C-N thin films prepared by reactive crossed beam pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Escobar-Alarcon, L., E-mail: luis.escobar@inin.gob.mx [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico DF 11801 (Mexico); Medina, V.; Camps, Enrique; Romero, S. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico DF 11801 (Mexico); Fernandez, M. [Departamento de Aceleradores, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico DF 11801 (Mexico); Solis-Casados, D. [Centro Conjunto de Investigacion en Quimica Sustentable, Facultad de Quimica UAEMex, km. 14.5 carr. Toluca-Atlacomulco (Mexico)

    2011-08-15

    In this work, Raman spectroscopy has been used to characterize Ti-C-N thin films in order to obtain information about the microstructure of the deposited materials, and in particular to study the effects due to the carbon incorporation into the TiN lattice. Ti-C-N thin films were prepared using a crossed plasma configuration in which the ablation of two different targets, titanium and carbon, in a reactive atmosphere was performed. With this configuration, the carbon content in the films was varied in an easy way from 5.0 at% to 40.0 at%. Thin film composition was determined from Non-Rutherford Backscattering Spectroscopy (NRBS) measurements. X-ray photoelectron spectroscopy and X-Ray diffraction measurements were also carried out in order to characterize the films in more detail, with this being used to give support to the interpretation of the Raman spectra. The Raman results revealed that at lower carbon concentrations a solid solution Ti(C, N) is formed, whilst at higher carbon concentrations a nanocomposite, consisting of nanocrystalline TiCN and TiC immersed in an amorphous carbon matrix is obtained.

  2. Sm-doped CeO{sub 2} single buffer layer for YBCO coated conductors by polymer assisted chemical solution deposition (PACSD) method

    Energy Technology Data Exchange (ETDEWEB)

    Li, G.; Pu, M.H.; Sun, R.P.; Wang, W.T.; Wu, W.; Zhang, X.; Yang, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Zhao, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)], E-mail: yzhao@home.swjtu.edu.cn

    2008-10-20

    An over 150 nm thick Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} (SCO) single buffer layer has been deposited on bi-axially textured NiW (2 0 0) alloy substrate. Highly in-plane and out-of-plane oriented, dense, smooth and crack free SCO single layer has been obtained via a polymer-assisted chemical solution deposition (PACSD) approach. YBCO thin film has been deposited equally via a PACSD route on the SCO-buffered NiW, the as grown YBCO yielding a sharp transition at T{sub c0} = 87 K as well as J{sub c}(0 T, 77 K) {approx} 1 MA/cm{sup 2}. These results indicates that RE (lanthanides other than Ce) doping may be an effective approach to improve the critical thickness of solution derived CeO{sub 2} film, which renders it a promising candidate as single buffer layer for YBCO coated conductors.

  3. The effects of the forward speed and air volume of an air-assisted sprayer on spray deposition in tendone trained vineyards

    Directory of Open Access Journals (Sweden)

    Simone Pascuzzi

    2013-12-01

    Full Text Available This paper reports the results of spray application trials in a tendone trained vineyard in order to evaluate the influence of forward speed and air volume on the foliar deposition of plant protection products (PPPs, maintaining roughly constant the volume applied. The trials used an air-assisted sprayer with a centrifugal fan and 4+4 adjustable fan-shaped diffusers, each with a nozzle-holder group. A full factorial experimental design was implemented, with three forward speeds and two airflow rates, organised with a randomised complete block design including three replicates. In order to consider the influence of canopy development, the tests (one spray application for each replicate of a mixture containing a water-soluble food dye as a tracer were replicated during two phenological stages: i the end of flowering; and ii berry touch. Leaves were picked at random from the canopy after each spray treatment, and foliar PPP deposition was evaluated using a spectrophotometer. This analysis of foliar deposition showed that the airflow rates produced by the fan were unsuitable for the dense canopy typical of this type of vineyard. However, the special shape of the diffusers may make this sprayer effective if the main objective of pesticide applications in tendone trained table grape vineyards is to control bunch diseases.

  4. Control of ordered mesoporous titanium dioxide nanostructures formed using plasma enhanced glancing angle deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gibson, Des [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Child, David, E-mail: david.child@uws.ac.uk [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Song, Shigeng; Zhao, Chao [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Alajiani, Yahya [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Department of Physics, Faculty of Science, Jazan University, Jazan (Saudi Arabia); Waddell, Ewan [Thin Film Solutions Ltd, West of Scotland Science Park, Glasgow, G20 0TH (United Kingdom)

    2015-10-01

    Three dimensional nanostructures of mesoporous (pore diameter between 2-50 nm) nanocrystalline titania (TiO{sub 2}) were produced using glancing angle deposition combined with plasma ion assisted deposition, providing plasma enhanced glancing angle deposition eliminating the need for post-annealing to achieve film crystallinity. Electron beam evaporation was chosen to deposit nanostructures at various azimuthal angles, achieving designed variation in three dimensional nanostructure. A thermionic broad beam hollow cathode plasma source was used to enhance electron beam deposition, with ability to vary in real time ion fluxes and energies providing a means to modify and control TiO{sub 2} nanostructure real time with controlled density and porosity along and lateral to film growth direction. Plasma ion assisted deposition was carried out at room temperature using a hollow cathode plasma source, ensuring low heat loading to the substrate during deposition. Plasma enhanced glancing angle TiO{sub 2} structures were deposited onto borosilicate microscope slides and used to characterise the effects of glancing angle and plasma ion energy distribution function on the optical and nanostructural properties. Variation in TiO{sub 2} refractive index from 1.40 to 2.45 (@ 550 nm) using PEGLAD is demonstrated. Results and analysis of the influence of plasma enhanced glancing angle deposition on evaporant path and resultant glancing angle deviation from standard GLAD are described. Control of mesoporous morphology is described, providing a means of optimising light trapping features and film porosity, relevant to applications such as fabrication of dye sensitised solar cells. - Highlights: • Plasma assistance during glancing angle deposition enables control of morphology. • Ion energy variation during glancing angle deposition varies columnar angle • Column thickness of glancing angle deposition dependant on ion current density • Ion current density variation during

  5. Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

    Energy Technology Data Exchange (ETDEWEB)

    Dai, Wei, E-mail: popdw@126.com [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China); Liu, Jingmao; Geng, Dongsen [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China); Guo, Peng [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zheng, Jun [Science and Technology on Surface Engineering Laboratory, Lanzhou Institute of Physics, Lanzhou 730000 (China); Wang, Qimin, E-mail: qmwang@gdut.edu.cn [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China)

    2016-12-01

    Highlights: • Diamond-like carbon films with Al and Cr doping were deposited. • Alternate multilayered structure consisted of Al-poor layer and Al-rich layer was formed. • The periodic Al-rich layers can greatly improve the residual stress and elastic resilience of the films. - Abstract: DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C{sub 2}H{sub 2} and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C{sub 2}H{sub 2} fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C{sub 2}H{sub 2} fraction. The results show that the Al and Cr contents in the films increased continuously as the C{sub 2}H{sub 2} fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would

  6. Influence of the voltage waveform during nanocomposite layer deposition by aerosol-assisted atmospheric pressure Townsend discharge

    Energy Technology Data Exchange (ETDEWEB)

    Profili, J. [LAPLACE, Université de Toulouse, CNRS, INPT, UPS, Toulouse (France); Département de Physique, Université de Montréal, Montréal, Québec H3C 3J7 (Canada); Levasseur, O.; Stafford, L. [Département de Physique, Université de Montréal, Montréal, Québec H3C 3J7 (Canada); Naudé, N.; Gherardi, N., E-mail: nicolas.gherardi@laplace.univ-tlse.fr [LAPLACE, Université de Toulouse, CNRS, INPT, UPS, Toulouse (France); Chaneac, C. [Sorbonne Universités, UPMC Univ. Paris 06, CNRS, Collège de France, Laboratoire de Chimie de la Matière Condensée de Paris (CMCP), 4 place Jussieu, F-75005 Paris (France)

    2016-08-07

    This work examines the growth dynamics of TiO{sub 2}-SiO{sub 2} nanocomposite coatings in plane-to-plane Dielectric Barrier Discharges (DBDs) at atmospheric pressure operated in a Townsend regime using nebulized TiO{sub 2} colloidal suspension in hexamethyldisiloxane as the growth precursors. For low-frequency (LF) sinusoidal voltages applied to the DBD cell, with voltage amplitudes lower than the one required for discharge breakdown, Scanning Electron Microscopy of silicon substrates placed on the bottom DBD electrode reveals significant deposition of TiO{sub 2} nanoparticles (NPs) close to the discharge entrance. On the other hand, at higher frequencies (HF), the number of TiO{sub 2} NPs deposited strongly decreases due to their “trapping” in the oscillating voltage and their transport along the gas flow lines. Based on these findings, a combined LF-HF voltage waveform is proposed and used to achieve significant and spatially uniform deposition of TiO{sub 2} NPs across the whole substrate surface. For higher voltage amplitudes, in the presence of hexamethyldisiloxane and nitrous oxide for plasma-enhanced chemical vapor deposition of inorganic layers, it is found that TiO{sub 2} NPs become fully embedded into a silica-like matrix. Similar Raman spectra are obtained for as-prepared TiO{sub 2} NPs and for nanocomposite TiO{sub 2}-SiO{sub 2} coating, suggesting that plasma exposure does not significantly alter the crystalline structure of the TiO{sub 2} NPs injected into the discharge.

  7. TiO2 nanoparticle thin film deposition by matrix assisted pulsed laser evaporation for sensing applications

    International Nuclear Information System (INIS)

    Caricato, A.P.; Capone, S.; Ciccarella, G.; Martino, M.; Rella, R.; Romano, F.; Spadavecchia, J.; Taurino, A.; Tunno, T.; Valerini, D.

    2007-01-01

    The MAPLE technique has been used for the deposition of nanostructured titania (TiO 2 ) nanoparticles thin films to be used for gas sensors applications. An aqueous solution of TiO 2 nanoparticles, synthesised by a novel chemical route, was frozen at liquid nitrogen temperature and irradiated with a pulsed ArF excimer laser in a vacuum chamber. A uniform distribution of TiO 2 nanoparticles with an average size of about 10 nm was deposited on Si and interdigitated Al 2 O 3 substrates as demonstrated by high resolution scanning electron microscopy-field emission gun inspection (SEM-FEG). Energy dispersive X-ray (EDX) analysis revealed the presence of only the titanium and oxygen signals and FTIR (Fourier transform infra-red) revealed the TiO 2 characteristic composition and bond. A comparison with a spin coated thin film obtained from the same solution of TiO 2 nanoparticles is reported. The sensing properties of the films deposited on interdigitated substrates were investigated, too

  8. Double dielectric barrier (DBD) plasma-assisted deposition of chemical stabilized nanoparticles on polyamide 6,6 and polyester fabrics

    Science.gov (United States)

    Ribeiro, A. I.; Modic, M.; Cvelbar, U.; Dinescu, G.; Mitu, B.; Nikiforov, A.; Leys, C.; Kuchakova, I.; Vanneste, M.; Heyse, P.; De Vrieze, M.; Carneiro, N.; Souto, A. P.; Zille, A.

    2017-10-01

    The development of new multifunctional textiles containing nanoparticles (NPs) has a special interest in several applications for pharmaceutical and medical products. Cu, Zn and Ag are the most promising antimicrobial NPs, exhibiting strong antibacterial activities. However, most of antimicrobial textiles coated with NPs are not able to perform a controlled release of NPs because of the high degree of aggregation. The aim of this study is to assess the effect of NPs stabilizers such as citrate, alginate and polyvinyl alcohol (PVA) in Cu, Zn and Ag NPs dispersions. The obtained dispersions were used to develop a new class of antibacterial NPs coatings onto polyamide 6,6 (PA66) and polyester fabrics (PES) by Double Dielectric Barrier (DBD) plasma discharge. Dynamic light scattering (DLS) was used to evaluate the best dispersing agent in terms of size, polydispersity index and zeta potential. Coating efficiency was evaluated by SEM, XPS and FTIR. The washing fastness of the coatings developed was also tested. The results show that the best dispersions were obtained using 2.5% of citrate for ZnO, 5% Alginate for Cu and 2.5% alginate for Ag NPs. SEM, XPS and FTIR analysis shows that DBD is an efficient deposition technique only for Ag and Cu NPs and that better perform in PA66 than PES fabric. The DBD deposition in air display similar results in term of NPS deposition of usually more efficient plasma jets using carrier gas such as N2 and Ar.

  9. Growth of thick La{sub 2}Zr{sub 2}O{sub 7} buffer layers for coated conductors by polymer-assisted chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xin, E-mail: xzhang@my.swjtu.edu.cn [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Yong, E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Xia, Yudong [State Key Lab of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Guo, Chunsheng [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Zhang, Yong [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhang, Han [Department of Physics, Peking University, Beijing 100871 (China)

    2015-06-15

    Highlights: • We develops a low-cost and high-efficient technology of fabricating LZO buffer layers. • Sufficient thickness LZO buffer layers have been obtained on NiW (2 0 0) alloy substrate. • Highly biaxially textured YBCO thin film has been deposited on LZO/NiW. - Abstract: La{sub 2}Zr{sub 2}O{sub 7} (LZO) epitaxial films have been deposited on LaAlO{sub 3} (LAO) (1 0 0) single-crystal surface and bi-axially textured NiW (2 0 0) alloy substrate by polymer-assisted chemical solution deposition, and afterwards studied with XRD, SEM and AFM approaches. Highly in-plane and out-of-plane oriented, dense, smooth, crack free and with a sufficient thickness (>240 nm) LZO buffer layers have been obtained on LAO (1 0 0) single-crystal surface; The films deposited on NiW (2 0 0) alloy substrate are also found with high degree in-plane and out-of-plane texturing, good density with pin-hole-free, micro-crack-free nature and a thickness of 300 nm. Highly epitaxial 500 nm thick YBa{sub 2}Cu{sub 3}O{sub 7−x} (YBCO) thin film exhibits the self-field critical current density (Jc) reached 1.3 MA/cm{sup 2} at 77 K .These results demonstrate the LZO epi-films obtained with current techniques have potential to be a buffer layer for REBCO coated conductors.

  10. Structural, nanomechanical and variable range hopping conduction behavior of nanocrystalline carbon thin films deposited by the ambient environment assisted filtered cathodic jet carbon arc technique

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Rawal, Ishpal; Tripathi, R.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Srivastava, A.K. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Kumar, Mahesh [Ultrafast Opto-Electronics and Tetrahertz Photonics Group, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India)

    2015-04-15

    Highlights: • Nanocrystalline carbon thin films are grown by filtered cathodic jet carbon arc process. • Effect of gaseous environment on the properties of carbon films has been studied. • The structural and nanomechanical properties of carbon thin films have been studied. • The VRH conduction behavior in nanocrystalline carbon thin films has been studied. - Abstract: This paper reports the deposition and characterization of nanocrystalline carbon thin films by filtered cathodic jet carbon arc technique assisted with three different gaseous environments of helium, nitrogen and hydrogen. All the films are nanocrystalline in nature as observed from the high resolution transmission electron microscopic (HRTEM) measurements, which suggests that the nanocrystallites of size ∼10–50 nm are embedded though out the amorphous matrix. X-ray photoelectron spectroscopic studies suggest that the film deposited under the nitrogen gaseous environment has the highest sp{sup 3}/sp{sup 2} ratio accompanied with the highest hardness of ∼18.34 GPa observed from the nanoindentation technique. The film deposited under the helium gaseous environment has the highest ratio of the area under the Raman D peak to G peak (A{sub D}/A{sub G}) and the highest conductivity (∼2.23 S/cm) at room temperature, whereas, the film deposited under the hydrogen environment has the lowest conductivity value (2.27 × 10{sup −7} S/cm). The temperature dependent dc conduction behavior of all the nanocrystalline carbon thin films has been analyzed in the light of Mott’s variable range hopping (VRH) conduction mechanism and observed that all the films obey three dimension VRH conduction mechanism for the charge transport.

  11. Ion assisted deposition with low-energy ions for applications in modern optics; Ionengestuetzte Beschichtungen mit niederenergetischen Ionen fuer Anwendungen in der modernen Optik

    Energy Technology Data Exchange (ETDEWEB)

    Kennedy, M.

    1999-07-01

    Main objective of this work is the development of ion assisted deposition processes without additional substrate heating for applications in precision and laser optics. New low-energy ion sources with ion energies below 100 eV were employed for the research work. Starting point of the process development are basic investigations on the ion assisted evaporation of fluoride and oxide thin film materials. The optimisation of the coating processes is primary done with the help of optical characterisation methods (spectral photometry, laser calorimetry, measurement of the total scattering). For the fluoride materials it has been possible to minimise the preferential sputtering effects, which are combined with absorptive losses caused by stoichiometric degradation, using low-energy xenon ions. The properties of ion assisted oxide films can be scaled with the deposited ion energy per condensing thin film molecule. The refraction index and the packing density increase with this energy, simultaneously the absorption of the thin film is reduced and the absorption edge comes close to the corresponding bulk value. Compared to conventionally deposited films the packing density is increased and the absorption, the water content and the scattering is reduced. The extinction coefficients at a wavelength of 532 nm lie below 5.10{sup -5}. The results of the investigations on single films are employed for the production of wideband antireflective coatings. Coatings on PMMA can be realised by a process adaptation with UV-absorbing films. A further focal point are antireflective coatings on alkali halides optics for high-power CO{sub 2}-lasers. Ion assisted deposition of NaF-films at extremely low ion energies (E{sub ion}{approx}5 eV) qualifies antireflective coatings with minimal absorption ({alpha}{approx}1.5 cm{sup -1}), high short-pulse damage threshold (50%-LIDT{approx}60J/cm{sup 2}) and improved degradational stability. [German] Hauptzielsetzung dieser Arbeit ist die Entwicklung

  12. Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices.

    Science.gov (United States)

    Jiao, Yuqing; Pello, Josselin; Mejia, Alonso Millan; Shen, Longfei; Smalbrugge, Barry; Geluk, Erik Jan; Smit, Meint; van der Tol, Jos

    2014-03-15

    In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C60 fullerene. The addition of C60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3  dB/cm has been demonstrated.

  13. Technical assistance to AECL: electron beam welding of thick-walled copper containers for nuclear fuel waste disposal

    International Nuclear Information System (INIS)

    Maak, P.Y.Y.

    1984-01-01

    This report describes the results of Phase Two of the copper electron beam welding project for the final closure of copper containers for nuclear fuel waste disposal. It has been demonstrated that single pass, electron beam square butt welds (depth of weld penetration > 25 mm) can be made without preheat in both electrolytic tough-pitch copper and oxygen-free copper plates. The present results show that oxygen-free copper exhibits better weldability than the electrolytic tough-pitch copper in terms of weld penetration and vulnerability to weld defects such as gas porosity, erratic metal overflow and blow holes. The results of ultrasonic inspection studies of the welds are also discussed

  14. Electrical characteristics of mixed Zr-Si oxide thin films prepared by ion beam induced chemical vapor deposition at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ferrer, F.J., E-mail: fjferrer@us.e [Centro Nacional de Aceleradores (CSIC - U. Sevilla), Av. Thomas A. Edison 7, E-41092 Sevilla (Spain); Frutos, F. [E.T.S. de Ingenieria Informatica, Avda. Reina Mercedes s/n, E-41012 Sevilla (Spain); Garcia-Lopez, J. [Centro Nacional de Aceleradores (CSIC - U. Sevilla), Av. Thomas A. Edison 7, E-41092 Sevilla (Spain); Jimenez, C. [Laboratoire de Materiaux et de Genie Physique, BP 257 - INPGrenoble Minatec - 3 parvis Louis Neel - 38016 Grenoble (France); Yubero, F. [Instituto de Ciencia de Materiales de Sevilla (CSIC - U. Sevilla), c/ Americo Vespucio 49, E-41092 Sevilla (Spain)

    2009-07-31

    Mixed Zr-Si oxide thin films have been prepared at room temperature by ion beam decomposition of organometallic volatile precursors. The films were flat and amorphous. They did not present phase segregation of the pure single oxides. A significant amount of impurities (-C-, -CH{sub x}, -OH, and other radicals coming from partially decomposed precursors) remained incorporated in the films after the deposition process. This effect is minimized if the Ar content in the O{sub 2}/Ar bombarding gas is maximized. Static permittivity and breakdown electrical field of the films were determined by capacitance-voltage and current-voltage electrical measurements. It is found that the static permittivity increases non-linearly from {approx} 4 for pure SiO{sub 2} to {approx} 15 for pure ZrO{sub 2}. Most of the dielectric failures in the films were due to extrinsic breakdown failures. The maximum breakdown electrical field decreases from {approx} 10.5 MV/cm for pure SiO{sub 2} to {approx} 45 MV/cm for pure ZrO{sub 2}. These characteristics are justified by high impurity content of the thin films. In addition, the analysis of the conduction mechanisms in the formed dielectrics is consistent to Schottky and Poole-Frenkel emission for low and high electric fields applied, respectively.

  15. Effect of discharge current and deposition temperature on roughness and density of NbC films fabricated by ion beam sputtering technique

    Science.gov (United States)

    Dhawan, Rajnish; Rai, Sanjay; Lodha, G. S.

    2014-04-01

    NbC films were prepared using Ion beam sputtering system at various discharges current from 0.4 amps to 1.2 amps at room temperature. Effect of temperature on NbC films were also studied by depositing NbC films at various temperatures from room temperature to 200,300,400 and 600°C. X-ray reflectivity (XRR) study shows that surface roughness of the film decreases with decrease in discharge current. The optimum lowest roughness 3.2´̊A having density 92% of bulk was achieved at discharge current 0.6 amps at 3.0 cm3/min Ar gas flow. X-ray study also shows that film roughness decreases with increase in temperature of the film and after a certain temperature it increases with increase in temperature. The lowest surface roughness 2.1´̊A was achieved at 300°C with density 83% of bulk NbC at constant discharge current 0.6 amps.

  16. Ion Beam Analysis, structure and corrosion studies of nc-TiN/a-Si3N4 nanocomposite coatings deposited by sputtering on AISI 316L

    International Nuclear Information System (INIS)

    García, J.; Canto, C.E.; Flores, M.; Andrade, E.; Rodríguez, E.; Jiménez, O.; Solis, C.; Lucio, O.G. de; Rocha, M.F.

    2014-01-01

    In this work, nanocomposite coatings of nc-TiN/a-Si 3 N 4 , were deposited on AISI 316L stainless steel substrate by a DC and RF reactive magnetron co-sputtering technique using an Ar–N 2 plasma. The structure of the coatings was characterized by means of XRD (X-ray Diffraction). The substrate and coating corrosion resistance were evaluated by potentiodynamic polarization using a Ringer solution as electrolyte. Corrosion tests were conducted with the purpose to evaluate the potential of this coating to be used on biomedical alloys. IBA (Ion Beam Analysis) techniques were applied to measure the elemental composition profiles of the films and, XPS (X-ray Photoelectron Spectroscopy) were used as a complementary technique to obtain information about the compounds present in the films. The nanocomposite coatings of nc-TiN/a-Si 3 N 4 show crystalline (TiN) and amorphous (Si 3 N 4 ) phases which confer a better protection against the corrosion effects compared with that of the AISI 316L

  17. The preparation of Zn-ferrite epitaxial thin film from epitaxial Fe3O4:ZnO multilayers by ion beam sputtering deposition

    International Nuclear Information System (INIS)

    Su, Hui-Chia; Dai, Jeng-Yi; Liao, Yen-Fa; Wu, Yu-Han; Huang, J.C.A.; Lee, Chih-Hao

    2010-01-01

    A new method to grow a well-ordered epitaxial ZnFe 2 O 4 thin film on Al 2 O 3 (0001) substrate is described in this work. The samples were made by annealing the ZnO/Fe 3 O 4 multilayer which was grown with low energy ion beam sputtering deposition. Both the Fe 3 O 4 and ZnO layers were found grown epitaxially at low temperature and an epitaxial ZnFe 2 O 4 thin film was formed after annealing at 1000 o C. X-ray diffraction shows the ZnFe 2 O 4 film is grown with an orientation of ZnFe 2 O 4 (111)//Al 2 O 3 (0001) and ZnFe 2 O 4 (1-10)//Al 2 O 3 (11-20). X-ray absorption spectroscopy studies show that Zn 2+ atoms replace the tetrahedral Fe 2+ atoms in Fe 3 O 4 during the annealing. The magnetic properties measured by vibrating sample magnetometer show that the saturation magnetization of ZnFe 2 O 4 grown from ZnO/Fe 3 O 4 multilayer reaches the bulk value after the annealing process.

  18. Exploring the Optical and Morphological Properties of Ag and Ag/TiO2 Nanocomposites Grown by Supersonic Cluster Beam Deposition

    Directory of Open Access Journals (Sweden)

    Emanuele Cavaliere

    2017-12-01

    Full Text Available Nanocomposite systems and nanoparticle (NP films are crucial for many applications and research fields. The structure-properties correlation raises complex questions due to the collective structure of these systems, often granular and porous, a crucial factor impacting their effectiveness and performance. In this framework, we investigate the optical and morphological properties of Ag nanoparticles (NPs films and of Ag NPs/TiO2 porous matrix films, one-step grown by supersonic cluster beam deposition. Morphology and structure of the Ag NPs film and of the Ag/TiO2 (Ag/Ti 50-50 nanocomposite are related to the optical properties of the film employing spectroscopic ellipsometry (SE. We employ a simple Bruggeman effective medium approximation model, corrected by finite size effects of the nano-objects in the film structure to gather information on the structure and morphology of the nanocomposites, in particular porosity and average NPs size for the Ag/TiO2 NP film. Our results suggest that SE is a simple, quick and effective method to measure porosity of nanoscale films and systems, where standard methods for measuring pore sizes might not be applicable.

  19. Concentration Determination of Copper in Aqueous Solution Using Deposition-Assisted Laser-Induced Breakdown Spectroscopy (LIBS).

    Science.gov (United States)

    Lu, Yuan; Li, Ying; Qi, Fujun; Zheng, Ronger

    2015-12-01

    In this paper, by means of Cu(2+) converting to Cu, the sub-ppb detection of copper in aqueous solution was successfully achieved using laser-induced breakdown spectroscopy (LIBS), and the sensitivity was found depending on the voltage applied for the deposition. With increasing voltage, the minimum detectable concentration was significantly lowered, while the signal intensity instability was increased. In order to reduce the impact from the intensity fluctuation, an estimation method was developed to determine the copper concentration via comparing minimum detectable concentrations. The obtained results suggest this method is a potential way toward quantitative analysis.

  20. Investigation of the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Bourlange, A.; Payne, D.J.; Palgrave, R.G.; Foord, J.S.; Egdell, R.G.; Jacobs, R.M.J.; Schertel, A.; Hutchison, J.L.; Dobson, P.J.

    2009-01-01

    Thin films of In 2 O 3 have been grown on Y-stabilised ZrO 2 (100) substrates by oxygen plasma assisted molecular beam epitaxy over a range of substrate temperatures between 650 o C and 900 o C. Growth at 650 o C leads to continuous but granular films and complete extinction of substrate core level structure in X-ray photoelectron spectroscopy. However with increasing substrate temperature the films break up into a series of discrete micrometer sized islands. Both the continuous and the island films have excellent epitaxial relationship with the substrate as gauged by X-ray diffraction and selected area electron diffraction and lattice imaging in high resolution transmission electron microscopy.

  1. The Effect of Collimating Lens Focusing on Laser Beam Shape in Matrix Assisted Laser Desorption/Ionization Mass Spectrometry (MALDI-MS)

    Science.gov (United States)

    O'Rourke, Matthew B.; Raymond, Benjamin B. A.; Djordjevic, Steven P.; Padula, Matthew P.

    2018-01-01

    Tissue imaging using matrix assisted laser desorption/ionization mass spectrometry (MALDI-MS) is a well-established technique that, in recent years, has seen wider adoption and novel application. Applications such imaging mass spectrometry (IMS) and biotyping are beginning to gain greater exposure and use; however, with limitations in optimization methods, producing the best result often relies on the ability to customize the physical characteristics of the instrumentation, a task that is challenging for most mass spectrometry laboratories. With this in mind, we have described the effect of making simple adjustments to the laser optics at the final collimating lens area, to adjust the laser beam size and shape in order to allow greater customization of the instrument for improving techniques such as IMS. We have therefore been able to demonstrate that improvements can be made without requiring the help of an electrical engineer or external funding in a way that only costs a small amount of time.

  2. The Effect of Collimating Lens Focusing on Laser Beam Shape in Matrix Assisted Laser Desorption/Ionization Mass Spectrometry (MALDI-MS)

    Science.gov (United States)

    O'Rourke, Matthew B.; Raymond, Benjamin B. A.; Djordjevic, Steven P.; Padula, Matthew P.

    2018-03-01

    Tissue imaging using matrix assisted laser desorption/ionization mass spectrometry (MALDI-MS) is a well-established technique that, in recent years, has seen wider adoption and novel application. Applications such imaging mass spectrometry (IMS) and biotyping are beginning to gain greater exposure and use; however, with limitations in optimization methods, producing the best result often relies on the ability to customize the physical characteristics of the instrumentation, a task that is challenging for most mass spectrometry laboratories. With this in mind, we have described the effect of making simple adjustments to the laser optics at the final collimating lens area, to adjust the laser beam size and shape in order to allow greater customization of the instrument for improving techniques such as IMS. We have therefore been able to demonstrate that improvements can be made without requiring the help of an electrical engineer or external funding in a way that only costs a small amount of time.

  3. Influence of WC-Co substrate pretreatment on diamond film deposition by laser-assisted combustion synthesis.

    Science.gov (United States)

    Veillère, Amélie; Guillemet, Thomas; Xie, Zhi Qiang; Zuhlke, Craig A; Alexander, Dennis R; Silvain, Jean-François; Heintz, Jean-Marc; Chandra, Namas; Lu, Yong Feng

    2011-04-01

    The quality of diamond films deposited on cemented tungsten carbide substrates (WC-Co) is limited by the presence of the cobalt binder. The cobalt in the WC-Co substrates enhances the formation of nondiamond carbon on the substrate surface, resulting in a poor film adhesion and a low diamond quality. In this study, we investigated pretreatments of WC-Co substrates in three different approaches, namely, chemical etching, laser etching, and laser etching followed by acid treatment. The laser produces a periodic surface pattern, thus increasing the roughness and releasing the stress at the interfaces between the substrate and the grown diamond film. Effects of these pretreatments have been analyzed in terms of microstructure and cobalt content. Raman spectroscopy was conducted to characterize both the diamond quality and compressive residual stress in the films. © 2011 American Chemical Society

  4. Role of the substrate on the magnetic anisotropy of magnetite thin films grown by ion-assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Prieto, Pilar, E-mail: pilar.prieto@uam.es [Dpto. Física Aplicada M-12, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Prieto, José Emilio [Centro de Microanálisis de Materiales (CMAM) and Dpto. De Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Gargallo-Caballero, Raquel; Marco, José Francisco; Figuera, Juan de la [Instituto de Química Física “Rocasolano”, CSIC, 28006 Madrid (Spain)

    2015-12-30

    Graphical abstract: - Highlights: • The magnetic anisotropy of magnetite thin films is controlled by the substrate induced microstructure. • Single-crystal oxide substrates induce fourfold in-plane magnetic anisotropy • MgO and SrTiO{sub 3} substrates show the same magnetic behavior despite its different mismatch with Fe{sub 3}O{sub 4} films. • Silicon and glass substrates induce in-plane magnetic isotropy and uniaxial anisotropy, respectively. - Abstract: Magnetite (Fe{sub 3}O{sub 4}) thin films were deposited on MgO (0 0 1), SrTiO{sub 3} (0 0 1), LaAlO{sub 3} (0 0 1) single crystal substrates as well on as silicon and amorphous glass in order to study the effect of the substrate on their magnetic properties, mainly the magnetic anisotropy. We have performed a structural, morphological and compositional characterization by X-ray diffraction, atomic force microscopy and Rutherford backscattering ion channeling in oxygen resonance mode. The magnetic anisotropy has been investigated by vectorial magneto-optical Kerr effect. The results indicate that the magnetic anisotropy is especially influenced by the substrate-induced microstructure. In-plane isotropy and uniaxial anisotropy behavior have been observed on silicon and glass substrates, respectively. The transition between both behaviors depends on grain size. For LaAlO{sub 3} substrates, in which the lattice mismatch between the Fe{sub 3}O{sub 4} films and the substrate is significant, a weak in-plane fourfold magnetic anisotropy is induced. However when magnetite is deposited on MgO (0 0 1) and SrTiO{sub 3} (0 0 1) substrates, a well-defined fourfold in-plane magnetic anisotropy is observed with easy axes along [1 0 0] and [0 1 0] directions. The magnetic properties on these two latter substrates are similar in terms of magnetic anisotropy and coercive fields.

  5. Dynamic expression profiles of MMPs/TIMPs and collagen deposition in mechanically unloaded rat heart: implications for left ventricular assist device support-induced cardiac alterations.

    Science.gov (United States)

    Wang, Lu; Xu, Yu-Xian; Du, Xiao-Jie; Sun, Quan-Ge; Tian, Ying-Jun

    2013-09-01

    Left ventricular assist devices (LVADs) ameliorate heart failure by reducing preload and afterload. However, extracellular matrix (ECM) deposition after application of LVADs is not clearly defined. The purpose of the present study was to investigate ECM remodeling after mechanical unloading in a rat heart transplant model. Sixty male Lewis rats were subjected to abdominal heterotopic heart transplantation, and the transplanted hearts were pressure- and volume-unloaded. The age- and weight- matched male Lewis rats who had undergone open thoracic surgeries were used as the control. Left ventricle ECM accumulation and the expression/activity of matrix metalloproteinases (MMPs) and tissue inhibitor of matrix metalloproteinases (TIMPs) were measured on the third, seventh, and fourteenth days after transplantation/sham surgery. Compared with the control group, myocardial ECM deposition significantly increased on the seventh and fourteenth days after heart transplantation (P < 0.05) and peaked on the 14th day. The gelatinase activity as well as mRNA expression of MMP-2 and MMP-9 significantly increased after transplantation (P < 0.05). Both mRNA and protein levels of TIMP-1 and TIMP-2 significantly increased compared with those of the control group. Mechanical unloading may lead to adverse remodeling of the ECM of the left ventricle. The underlying mechanism may due to the imbalance of the MMP/TIMP system, especially the remarkable upregulation of TIMPs in the pressure and volume unloaded heart.

  6. Ion-beam technologies

    Energy Technology Data Exchange (ETDEWEB)

    Fenske, G.R. [Argonne National Lab., IL (United States)

    1993-01-01

    This compilation of figures and diagrams reviews processes for depositing diamond/diamond-like carbon films. Processes addressed are chemical vapor deposition (HFCVD, PACVD, etc.), plasma vapor deposition (plasma sputtering, ion beam sputtering, evaporation, etc.), low-energy ion implantation, and hybrid processes (biased sputtering, IBAD, biased HFCVD, etc.). The tribological performance of coatings produced by different means is discussed.

  7. Effects of Ga ion irradiation on growth of GaN on SiN substrates by electron cyclotron resonance-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yanagisawa, J. [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan) and Center for Quantum Science and Technology under Extreme Conditions, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan) and CREST-JST, Kawaguchi Center Building, 4-1-8, Honcho, Kawaguchi, Saitama 332-0012 (Japan)]. E-mail: yanagisawa@ee.es.osaka-u.ac.jp; Matsumoto, H. [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); Fukuyama, T. [Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku, Osaka 535-8585 (Japan); Shiraishi, Y. [Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku, Osaka 535-8585 (Japan); Yodo, T. [Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku, Osaka 535-8585 (Japan); Akasaka, Y. [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan)

    2007-04-15

    The possibility of forming GaN layers on Ga-implanted SiN surfaces was investigated using electron cyclotron resonance-assisted molecular beam epitaxy (MBE). It is found that the GaN layer initially formed on the SiN surface by Ga implantation at room temperature was amorphous-like, but become to polycrystalline after annealing at 650 deg. C for 3 min in vacuum. After the MBE growth of GaN, a grain structure of h-GaN was observed on the Ga-implanted SiN surface. The crystallinity of the GaN grown was, however, decreased upon increasing the Ga ion fluence on the SiN surface, which might be due, at least partly, to the formation of Ga clusters by the excess Ga implanted. The present results indicate the possibility of forming patterned GaN layers on SiN by selective Ga implantation on the SiN substrate, using a focused ion beam.

  8. Atomistic model of ultra-smooth amorphous thin film growth by low-energy ion-assisted physical vapour deposition

    International Nuclear Information System (INIS)

    Alvarez, R; Cotrino, J; Palmero, A; Vazquez, L; Gago, R; Redondo-Cubero, A

    2013-01-01

    The growth of ultra-smooth amorphous thin films induced by low-energy (below 1 keV) ion-assistance processes is studied. The relative contribution of ion-induced smoothening effects is analysed by means of a Monte Carlo model and experimental data. In general, highly rough granular or ultra-smooth (with roughness below one monolayer) films are produced depending on the competition between surface shadowing and ion-induced adatom mobility and sputtering. The ultra-smooth growth regime is experimentally and theoretically consistent with the Edwards–Wilkinson growth mode, which is related to the ion-induced enhancement of surface mobility. Overall, the framework and the fundamentals to analyse this type of growth are developed and discussed. (paper)

  9. Dynamics of combined electron beam and laser dispersion of polymers in vacuum

    OpenAIRE

    Luchnikov, P. A.; Rogachev, A. V.; Yarmolenko, M. A.; Rogachev, A. A.; Bespalko (Bespal'ko), Anatoly Alekseevich

    2016-01-01

    The mechanisms of the impact of the laser assisting effect on the dispersion kinetics and on the structure of the deposited layers in electron beam dispersion of a polymer target were analyzed. The proposed model and analytical expressions adequately describe the kinetic dependence of the polymer materials dispersion rate in a vacuum on the intensity of laser processing of their dispersion zone.

  10. Efficient focusing of 8 keV X-rays with multilayer Fresnel zone plates fabricated by atomic layer deposition and focused ion beam milling

    International Nuclear Information System (INIS)

    Mayer, Marcel; Keskinbora, Kahraman; Grévent, Corinne; Szeghalmi, Adriana; Knez, Mato; Weigand, Markus; Snigirev, Anatoly; Snigireva, Irina; Schütz, Gisela

    2013-01-01

    The fabrication and performance of multilayer Al 2 O 3 /Ta 2 O 5 Fresnel zone plates in the hard X-ray range and a discussion of possible future developments considering available materials are reported. Fresnel zone plates (FZPs) recently showed significant improvement by focusing soft X-rays down to ∼10 nm. In contrast to soft X-rays, generally a very high aspect ratio FZP is needed for efficient focusing of hard X-rays. Therefore, FZPs had limited success in the hard X-ray range owing to difficulties of manufacturing high-aspect-ratio zone plates using conventional techniques. Here, employing a method of fabrication based on atomic layer deposition (ALD) and focused ion beam (FIB) milling, FZPs with very high aspect ratios were prepared. Such multilayer FZPs with outermost zone widths of 10 and 35 nm and aspect ratios of up to 243 were tested for their focusing properties at 8 keV and shown to focus hard X-rays efficiently. This success was enabled by the outstanding layer quality thanks to ALD. Via the use of FIB for slicing the multilayer structures, desired aspect ratios could be obtained by precisely controlling the thickness. Experimental diffraction efficiencies of multilayer FZPs fabricated via this combination reached up to 15.58% at 8 keV. In addition, scanning transmission X-ray microscopy experiments at 1.5 keV were carried out using one of the multilayer FZPs and resolved a 60 nm feature size. Finally, the prospective of different material combinations with various outermost zone widths at 8 and 17 keV is discussed in the light of the coupled wave theory and the thin-grating approximation. Al 2 O 3 /Ir is outlined as a promising future material candidate for extremely high resolution with a theoretical efficiency of more than 20% for as small an outermost zone width as 10 nm at 17 keV

  11. Study of pattern transition in nanopatterned Si(100) produced by impurity-assisted low-energy ion-beam erosion

    Science.gov (United States)

    Koyiloth Vayalil, Sarathlal; Gupta, Ajay; Roth, Stephan V.

    2017-04-01

    In this work, formation of self-organized Si nanostructures induced by pure Fe incorporation during normal incidence low-energy (1keV) Ar^+ ion bombardment is presented. It has been observed that the incorporation of Fe affects the evolution of the surface topography. The addition of Fe generates pronounced nanopatterns, such as dots, ripples and combinations of dots and ripples. The orientation of the ripple wave vector of the patterns formed is found to be in a direction normal to the Fe flow. The nanoripples with wavelength of the order of 39 nm produced is expected to be the lowest wavelength of the patterns reported on ion-beam-eroded structures under the incorporation of metallic impurities as per our knowledge. From the AFM and GISAXS analysis, it has been confirmed that the ripples formed are asymmetric in nature. The effect of the concentration of the Fe on morphological transition of the patterns has been studied using Rutherford backscattering measurements.

  12. Study on a Real-Time BEAM System for Diagnosis Assistance Based on a System on Chips Design

    Directory of Open Access Journals (Sweden)

    Kung-Wei Chang

    2013-05-01

    Full Text Available As an innovative as well as an interdisciplinary research project, this study performed an analysis of brain signals so as to establish BrainIC as an auxiliary tool for physician diagnosis. Cognition behavior sciences, embedded technology, system on chips (SOC design and physiological signal processing are integrated in this work. Moreover, a chip is built for real-time electroencephalography (EEG processing purposes and a Brain Electrical Activity Mapping (BEAM system, and a knowledge database is constructed to diagnose psychosis and body challenges in learning various behaviors and signals antithesis by a fuzzy inference engine. This work is completed with a medical support system developed for the mentally disabled or the elderly abled.

  13. Antiresorption implant coatings based on calcium alendronate and octacalcium phosphate deposited by matrix assisted pulsed laser evaporation.

    Science.gov (United States)

    Boanini, Elisa; Torricelli, Paola; Forte, Lucia; Pagani, Stefania; Mihailescu, Natalia; Ristoscu, Carmen; Mihailescu, Ion N; Bigi, Adriana

    2015-12-01

    The integration of an implant material with bone tissue depends on the chemistry and physics of the implant surface. In this study we applied matrix assisted pulsed laser evaporation (MAPLE) in order to synthesize calcium alendronate monohydrate (a bisphosphonate obtained by calcium sequestration from octacalcium phosphate by alendronate) and calcium alendronate monohydrate/octacalcium phosphate composite thin films on titanium substrates. Octacalcium phosphate coatings were prepared as reference material. The powders, which were synthesized in aqueous medium, were suspended in deionised water, frozen at liquid nitrogen temperature and used as targets for MAPLE experiments. The transfer was conducted with a KrF* excimer laser source (λ = 248 nm, τFWHM ≤ 25 ns) in mild conditions of temperature and pressure. XRD, FTIR and SEM analyses confirmed that the coatings contain the same crystalline phases as the as-prepared powder samples. Osteoblast derived from stem cells and osteoclast derived from monocytes of osteoporotic subjects were co-cultured on the coatings up to 14 days. Osteoclast displayed significantly reduced proliferation and differentiation in the presence of calcium alendronate monohydrate, pointing to a clear role of the coatings containing this bisphosphonate on inhibiting excessive bone resorption. At variance, osteoblast production of alkaline phosphatase and type I pro-collagen were promoted by the presence of bisphosphonate, which also decreased the production of interleukin 6. The positive influence towards osteoblast differentiation was even more enhanced in the composite coatings, thanks to the presence of octacalcium phosphate. Copyright © 2015 Elsevier B.V. All rights reserved.

  14. Accuracy and speed of robotic assisted needle interventions using a modern cone beam computed tomography intervention suite: a phantom study

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, Boris [Goethe University Hospital, Institute for Diagnostic and Interventional Radiology, Frankfurt (Germany); Goethe University Hospital, Department of Diagnostic and Interventional Radiology, Frankfurt (Germany); Eichler, Katrin; Siebenhandl, Petra; Gruber-Rouh, Tatjana; Vogl, Thomas Josef; Zangos, Stephan [Goethe University Hospital, Institute for Diagnostic and Interventional Radiology, Frankfurt (Germany); Czerny, Christoph [Goethe University Hospital, Department of Trauma Surgery, Frankfurt (Germany)

    2013-01-15

    To analyse the feasibility and accuracy of robotic aided interventions on a phantom when using a modern C-arm-mounted cone beam computed tomography (CBCT) device in combination with needle guidance software. A small robotic device capable of holding and guiding needles was attached to the intervention table. After acquiring a 3D data set the access path was planned on the CBCT workstation and shown on the intervention monitor. Then the robot was aligned to the live fluoroscopic image. A total of 40 punctures were randomly conducted on a phantom armed with several targets (diameter 2 mm) in single and double oblique trajectory (n = 20 each). Target distance, needle deviation and time for the procedures were analysed. All phantom interventions (n = 40) could be performed successfully. Mean target access path within the phantom was 8.5 cm (min 4.2 cm, max 13.5 cm). Average needle tip deviation was 1.1 mm (min 0 mm, max 4.5 mm), time duration was 3:59 min (min 2:07 min, max 10:37 min). When using the proposed robot device in a CBCT intervention suite, highly accurate needle-based interventional punctures are possible in a reasonable timely manner in single as well as in double oblique trajectories. (orig.)

  15. Accuracy and speed of robotic assisted needle interventions using a modern cone beam computed tomography intervention suite: a phantom study

    International Nuclear Information System (INIS)

    Schulz, Boris; Eichler, Katrin; Siebenhandl, Petra; Gruber-Rouh, Tatjana; Vogl, Thomas Josef; Zangos, Stephan; Czerny, Christoph

    2013-01-01

    To analyse the feasibility and accuracy of robotic aided interventions on a phantom when using a modern C-arm-mounted cone beam computed tomography (CBCT) device in combination with needle guidance software. A small robotic device capable of holding and guiding needles was attached to the intervention table. After acquiring a 3D data set the access path was planned on the CBCT workstation and shown on the intervention monitor. Then the robot was aligned to the live fluoroscopic image. A total of 40 punctures were randomly conducted on a phantom armed with several targets (diameter 2 mm) in single and double oblique trajectory (n = 20 each). Target distance, needle deviation and time for the procedures were analysed. All phantom interventions (n = 40) could be performed successfully. Mean target access path within the phantom was 8.5 cm (min 4.2 cm, max 13.5 cm). Average needle tip deviation was 1.1 mm (min 0 mm, max 4.5 mm), time duration was 3:59 min (min 2:07 min, max 10:37 min). When using the proposed robot device in a CBCT intervention suite, highly accurate needle-based interventional punctures are possible in a reasonable timely manner in single as well as in double oblique trajectories. (orig.)

  16. Cadmium and lead determination in foods by beam injection flame furnace atomic absorption spectrometry after ultrasound-assisted sample preparation

    International Nuclear Information System (INIS)

    Aleixo, Poliana Carolina; Junior, Dario Santos; Tomazelli, Andrea Cristina; Rufini, Iolanda A.; Berndt, Harald; Krug, Francisco Jose

    2004-01-01

    A simple method for cadmium and lead determination in foods by beam injection flame furnace atomic absorption spectrometry (BIFF-AAS) was proposed. Food slurries were prepared by transferring an exact amount of cryogenic-ground homogenized material (50-100 mg) to centrifuge tubes, followed by addition of 5 ml (up to 2.8 mol l -1 ) nitric acid solution and sonication in an ultrasonic bath during 5-10 min. Thereafter, slurries were diluted with water to 10 ml, centrifuged during 5 min at 5400 rpm and 400 μl aliquot of the supernatant was analyzed by BIFF-AAS. The detection limits based on peak height measurements were 0.03 μg g -1 Cd and 1.6 μg g -1 Pb for 2% (m/v) slurry (200 mg/10 ml). For method validation, the certified reference materials Pig Kidney (BCR 186) and Rice Flour (NIES 10) were used. Quantitative cadmium and lead recoveries were obtained and no statistical differences were found at 95% level by applying the t-test

  17. High performance PbS quantum dot sensitized solar cells via electric field assisted in situ chemical deposition on modulated TiO2 nanotube arrays

    Science.gov (United States)

    Tao, Liang; Xiong, Yan; Liu, Hong; Shen, Wenzhong

    2013-12-01

    Quantum dot sensitized solar cells (QDSSCs) are attractive photovoltaic devices due to their simplicity and low material requirements. However, efforts to realize high efficiencies in QDSSCs have often been offset by complicated processes and expensive or toxic materials, significantly limiting their useful application. In this work, we have realized for the first time, high performance PbS QDSSCs based on TiO2 nanotube arrays (NTAs) via an in situ chemical deposition method controlled by a low electric field. An efficiency, η, of ~3.41% under full sun illumination has been achieved, which is 133.6% higher than the best result previously reported for a simple system without doping or co-sensitizing, and comparable to systems with additional chemicals. Furthermore, a high open-circuit voltage (0.64 V), short-circuit current (8.48 mA cm-2) and fill factor (0.63) have been achieved. A great increase in the quantity of the loaded quantum dots (QDs) in the NTAs was obtained from the in situ electric field assisted chemical bath deposition (EACBD) process, which was the most significant contributing factor with respect to the high JSC. The high VOC and FF have been attributed to a much shorter electron path, less structural and electronic defects, and lower recombination in the ordered TiO2 NTAs produced by oscillating anodic voltage. Besides, the optimal film thickness (~4 μm) based on the NTAs was much thinner than that of the control cell based on nanoporous film (~30.0 μm). This investigation can hopefully offer an effective way of realizing high performance QDSSCs and QD growth/installation in other nanostructures as well.Quantum dot sensitized solar cells (QDSSCs) are attractive photovoltaic devices due to their simplicity and low material requirements. However, efforts to realize high efficiencies in QDSSCs have often been offset by complicated processes and expensive or toxic materials, significantly limiting their useful application. In this work, we have

  18. Nanoscale dose deposition in cell structures under X-ray irradiation treatment assisted with nanoparticles of a set of elements: an analytical approach to cell survival

    International Nuclear Information System (INIS)

    Melo B, W.; Barboza F, M.; Chernov, G.

    2016-10-01

    The goal of combining nanoparticles (Nps) with radiation therapy is to increase the differential effect between healthy and tumor tissues. Only some elements have been investigated to be used as radiosensitizers and no systematic experimental or theoretical comparisons between different materials have been developed. MacMahon, et al. (Nano scale, 2016, 8, 581) presents the first systematic computational study of the impact of elemental composition on nanoparticle radiation interaction for kilo voltage and megavoltage X-ray exposure, for a range of elements (Z = 14 - 80). In this study we present and analytical model to assess the cell survival modification responses of cell cultures under irradiation treatments with keV X-rays assisted with Nps of different materials as platinum, hafnium, gadolinium, gold, germanium, iodine and iron. This model starts from the data of radial dose deposition around a single 20 nm diameter Np irradiated with photons of an energy 20 keV higher than the element K-shell binding energy to the nano scale probability of dose distribution inside cell structures with embedded Nps (the assessment of the average dose and the average squared dose in cell structure). Also based on the Local Effect Model we estimate potential biological effects, as is the case of the Relative Biological Effectiveness (RBE). Nano scale dose deposition exhibits a complex dependence on atomic number, as a consequence of the variations in secondary Auger electron spectra, this is manifested in significant variations in RBE. Upon in vitro experiments RBE varies from 1 to 1.6. Values representative of a high radiosensitization were observed for lower energies, ones that are well reproduced by our analytical analysis for cell cultures with a homogeneous distribution of different material Nps. (Author)

  19. Nanoscale dose deposition in cell structures under X-ray irradiation treatment assisted with nanoparticles of a set of elements: an analytical approach to cell survival

    Energy Technology Data Exchange (ETDEWEB)

    Melo B, W.; Barboza F, M. [Universidad de Sonora, Departamento de Investigacion en Fisica, 83000 Hermosillo, Sonora (Mexico); Chernov, G., E-mail: g.chernovch@gmail.com [Universidad de Sonora, Departamento de Fisica, 83000 Hermosillo, Sonora (Mexico)

    2016-10-15

    The goal of combining nanoparticles (Nps) with radiation therapy is to increase the differential effect between healthy and tumor tissues. Only some elements have been investigated to be used as radiosensitizers and no systematic experimental or theoretical comparisons between different materials have been developed. MacMahon, et al. (Nano scale, 2016, 8, 581) presents the first systematic computational study of the impact of elemental composition on nanoparticle radiation interaction for kilo voltage and megavoltage X-ray exposure, for a range of elements (Z = 14 - 80). In this study we present and analytical model to assess the cell survival modification responses of cell cultures under irradiation treatments with keV X-rays assisted with Nps of different materials as platinum, hafnium, gadolinium, gold, germanium, iodine and iron. This model starts from the data of radial dose deposition around a single 20 nm diameter Np irradiated with photons of an energy 20 keV higher than the element K-shell binding energy to the nano scale probability of dose distribution inside cell structures with embedded Nps (the assessment of the average dose and the average squared dose in cell structure). Also based on the Local Effect Model we estimate potential biological effects, as is the case of the Relative Biological Effectiveness (RBE). Nano scale dose deposition exhibits a complex dependence on atomic number, as a consequence of the variations in secondary Auger electron spectra, this is manifested in significant variations in RBE. Upon in vitro experiments RBE varies from 1 to 1.6. Values representative of a high radiosensitization were observed for lower energies, ones that are well reproduced by our analytical analysis for cell cultures with a homogeneous distribution of different material Nps. (Author)

  20. Nonlinear optical studies on 4-(ferrocenylmethylimino)-2-hydroxy-benzoic acid thin films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

    International Nuclear Information System (INIS)

    Matei, Andreea; Marinescu, Maria; Constantinescu, Catalin; Ion, Valentin; Mitu, Bogdana; Ionita, Iulian; Dinescu, Maria; Emandi, Ana

    2016-01-01

    Graphical abstract: - Highlights: • A newly synthesized ferrocene-derivative exhibits SHG potential. • Matrix-assisted pulsed laser evaporation is employed for thin film fabrication. • The optical properties of the films are investigated, presented and discussed. • At maximum laser output power, the SHG signal is strongly influenced by thin film thickness. - Abstract: We present results on a new, laboratory synthesized ferrocene-derivative, i.e. 4-(ferrocenylmethylimino)-2-hydroxy-benzoic acid. Thin films with controlled thickness are deposited by matrix-assisted pulsed laser evaporation (MAPLE), on quartz and silicon substrates, with the aim of evaluating the nonlinear optical properties for potential optoelectronic applications. Dimethyl sulfoxide was used as matrix, with 1% wt. concentration of the guest compound. The frozen target is irradiated by using a Nd:YAG laser (4ω/266 nm, 7 ns pulse duration, 10 Hz repetition rate), at low fluences ranging from 0.1 to 1 J/cm 2 . Atomic force microscopy (AFM) and scanning electron microscopy (SEM) are used to probe the surface morphology of the films. Fourier transform infrared (FTIR) and Raman spectroscopy reveal similar structure of the thin film material when compared to the starting material. The optical properties of the thin films are investigated by spectroscopic-ellipsometry (SE), and the refractive index dependence with respect to temperature is studied. The second harmonic generation (SHG) potential is assessed by using a femtosecond Ti:sapphire laser (800 nm, 60–100 fs pulse duration, 80 MHz repetition rate), at 200 mW maximum output power, revealing that the SHG signal intensity is strongly influenced by the films’ thickness.

  1. SU-D-206-03: Segmentation Assisted Fast Iterative Reconstruction Method for Cone-Beam CT

    International Nuclear Information System (INIS)

    Wu, P; Mao, T; Gong, S; Wang, J; Niu, T; Sheng, K; Xie, Y

    2016-01-01

    Purpose: Total Variation (TV) based iterative reconstruction (IR) methods enable accurate CT image reconstruction from low-dose measurements with sparse projection acquisition, due to the sparsifiable feature of most CT images using gradient operator. However, conventional solutions require large amount of iterations to generate a decent reconstructed image. One major reason is that the expected piecewise constant property is not taken into consideration at the optimization starting point. In this work, we propose an iterative reconstruction method for cone-beam CT (CBCT) using image segmentation to guide the optimization path more efficiently on the regularization term at the beginning of the optimization trajectory. Methods: Our method applies general knowledge that one tissue component in the CT image contains relatively uniform distribution of CT number. This general knowledge is incorporated into the proposed reconstruction using image segmentation technique to generate the piecewise constant template on the first-pass low-quality CT image reconstructed using analytical algorithm. The template image is applied as an initial value into the optimization process. Results: The proposed method is evaluated on the Shepp-Logan phantom of low and high noise levels, and a head patient. The number of iterations is reduced by overall 40%. Moreover, our proposed method tends to generate a smoother reconstructed image with the same TV value. Conclusion: We propose a computationally efficient iterative reconstruction method for CBCT imaging. Our method achieves a better optimization trajectory and a faster convergence behavior. It does not rely on prior information and can be readily incorporated into existing iterative reconstruction framework. Our method is thus practical and attractive as a general solution to CBCT iterative reconstruction. This work is supported by the Zhejiang Provincial Natural Science Foundation of China (Grant No. LR16F010001), National High-tech R

  2. Creation of biomaterials using the dual beam IBAD methods

    International Nuclear Information System (INIS)

    Rajchel, B.; Jaworska, L.; Proniewicz, L.M.

    2001-01-01

    The Dual Beam Ion Assisted Deposition technique (IBAD) application for creation of the hard, biocompatible coating layers has been presented and discussed. As substrate the stainless steel, Ti, special titanium alloys, the Al 2 O 3 or other solid materials can be used. Presently, the biocompatible coating layers such as DLC (Diamond Like Coating), β-SiC, TiC, hydroxyapatite and thin coating layer based on Ca, P, O, H have been prepared and investigated

  3. Development of a microwave-assisted digestion method using ICP-OES to measure metals in gum deposits of internal combustion engines

    Energy Technology Data Exchange (ETDEWEB)

    Dantas, Allan N.S.; Costa, Rouse S.; Gouveia, Sandro T.; Lopes, Gisele S. [Departamento de Quimica Analitica e Fisico-Quimica, Universidade Federal do Ceara, Fortaleza, CE (Brazil)

    2010-11-15

    The heterogeneous nature of gum samples obtained from the deposits of internal combustion engines is the main difficulty in accurate determination of their metal content. A microwave-assisted digestion method was implemented using factorial experimental design. The optimization of this procedure was carried out by first evaluating the effects of variables on the response (i.e., the residual carbon content or RCC). The variables of maximum heating power, heating time and nitric acid volume were studied. The RCC response was measured by inductively coupled plasma optical emission spectrometry (ICP-OES). The time of maximum heating power was essential to obtain a desired RCC. The surface response was constructed with optimal conditions presented at 6 min and heating power of 700 W. Amounts of aluminum (Al), calcium (Ca), copper (Cu), iron (Fe), magnesium (Mg), manganese (Mn), nickel (Ni), lead (Pb) and zinc (Zn) were determined in 26 gum samples by ICP-OES. Ca, Fe, Mg and Zn were found at mg g{sup -1} levels in the samples, while Al, Cu, Mn, Ni and Pb were found at mg kg{sup -1} levels. Principal component analysis (PCA) was used to establish a correlation between the gum samples and the different metal contents. Three distinct groups were separated according to the characteristics of the collected samples. (author)

  4. Nano-sized Fe-metal catalyst on ZnO-SiO2: (photo-assisted deposition and impregnation) Synthesis routes and nanostructure characterization

    International Nuclear Information System (INIS)

    Mohamed, R.M.; Al-Rayyani, M.A.; Baeissa, E.S.; Mkhalid, I.A.

    2011-01-01

    Highlights: → We prepared Fe/ZnO-SiO 2 by two methods. → We tested photocatalytic activity for degradation of methylene blue dye. → We controlled band gap and size. → We found activity of Fe/ZnO-SiO 2 prepared by PAD is hightest photocatalytic activity. - Abstract: A nano-sized Fe metal on ZnO-SiO 2 was synthesized using the photo-assisted deposition (PAD) and impregnation routes. The obtained samples were characterized by a series of techniques including X-ray diffraction (XRD), UV-vis diffuse reflectance spectroscopy, N 2 adsorption, extended X-ray absorption fine structure (EXAFS), and transmission electron microscopy (TEM). Photocatalytic reactivity using Fe-ZnO-SiO 2 catalysts under visible-light condition on the degradation of methylene blue dye was evaluated. The results of characterization reveal, a notable photocatalytic activity of PAD:Fe-ZnO-SiO 2 which was about 9 and 12 times higher than that of Img:Fe-ZnO-SiO 2 and ZnO-SiO 2 , respectively.

  5. Friction and Wear Properties of Selected Solid Lubricating Films. Part 3; Magnetron-Sputtered and Plasma-Assisted, Chemical-Vapor-Deposited Diamondlike Carbon Films

    Science.gov (United States)

    Miyoshi, Kazuhisa; Iwaki, Masanori; Gotoh, Kenichi; Obara, Shingo; Imagawa, Kichiro

    2000-01-01

    To evaluate commercially developed dry solid film lubricants for aerospace bearing applications, an investigation was conducted to examine the friction and wear behavior of magnetron-sputtered diamondlike carbon (MS DLC) and plasma-assisted, chemical-vapor-deposited diamondlike carbon (PACVD DLC) films in sliding contact with 6-mm-diameter American Iron and Steel Institute (AISI) 440C stainless steel balls. Unidirectional sliding friction experiments were conducted with a load of 5.9 N (600 g), a mean Hertzian contact pressure of 0.79 GPa (maximum Hertzian contact pressure of L-2 GPa), and a sliding velocity of 0.2 m/s. The experiments were conducted at room temperature in three environments: ultrahigh vacuum (vacuum pressure, 7x10(exp -7) Pa), humid air (relative humidity, approx.20 percent), and dry nitrogen (relative humidity, PACVD DLC films met the criteria in humid air and dry nitrogen but failed in ultrahigh vacuum, where the coefficients of friction were greater than the criterion, 0.3. In sliding contact with 440C stainless steel balls in all three environments the PACVD DLC films exhibited better tribological performance (i.e., lower friction and wear) than the MS DLC films. All sliding involved adhesive transfer of wear materials: transfer of DLC wear debris to the counterpart 440C stainless steel and transfer of 440C stainless steel wear debris to the counterpart DLC film.

  6. Incorporating C60 as Nucleation Sites Optimizing PbI2 Films To Achieve Perovskite Solar Cells Showing Excellent Efficiency and Stability via Vapor-Assisted Deposition Method.

    Science.gov (United States)

    Chen, Hai-Bin; Ding, Xi-Hong; Pan, Xu; Hayat, Tasawar; Alsaedi, Ahmed; Ding, Yong; Dai, Song-Yuan

    2018-01-24

    To achieve high-quality perovskite solar cells (PSCs), the morphology and carrier transportation of perovskite films need to be optimized. Herein, C 60 is employed as nucleation sites in PbI 2 precursor solution to optimize the morphology of perovskite films via vapor-assisted deposition process. Accompanying the homogeneous nucleation of PbI 2 , the incorporation of C 60 as heterogeneous nucleation sites can lower the nucleation free energy of PbI 2 , which facilitates the diffusion and reaction between PbI 2 and organic source. Meanwhile, C 60 could enhance carrier transportation and reduce charge recombination in the perovskite layer due to its high electron mobility and conductivity. In addition, the grain sizes of perovskite get larger with C 60 optimizing, which can reduce the grain boundaries and voids in perovskite and prevent the corrosion because of moisture. As a result, we obtain PSCs with a power conversion efficiency (PCE) of 18.33% and excellent stability. The PCEs of unsealed devices drop less than 10% in a dehumidification cabinet after 100 days and remain at 75% of the initial PCE during exposure to ambient air (humidity > 60% RH, temperature > 30 °C) for 30 days.

  7. Microstructure Evolution of Electron Beam Physical Vapour Deposited Ni-23.5Cr-2.66Co-1.44Al Superalloy Sheet During Annealing at 600 °C

    Directory of Open Access Journals (Sweden)

    Li Mingwei

    2013-02-01

    Full Text Available Microstructure evolution of electron beam physical vapour deposited (EB-PVD Ni‑23.5Cr‑2.66Co‑1.44Al superalloy sheet during annealing at 600 °C was investigated. The results showed that the as-deposited alloy was composed of only g phase. After annealing at 600 °C, the locations of diffraction peaks were still the same. The (220 diffraction peak of the deposition side increased with annealing time. The sheet on deposited side had a tendency toward forming (220 texture during post-annealing. No obvious texture was observed at as-deposited and annealed sheet at 600 °C in substrate side. The count and size of "voids" decreased with time. The size of grains increased obviously with annealing time. The ultimate tensile strength of EB-PVD Ni-23.5Cr-2.66Co-1.44Al alloy sheet increased from 641 MPa to 829 MPa after annealing at 600 °C for 30 hours.

  8. Schottky barrier height of Ni to β-(AlxGa1-x)2O3 with different compositions grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Ahmadi, Elaheh; Oshima, Yuichi; Wu, Feng; Speck, James S.

    2017-03-01

    Coherent β-(AlxGa1-x)2O3 films (x = 0, 0.038, 0.084, 0.164) were grown successfully on a Sn-doped β-Ga2O3 (010) substrate using plasma-assisted molecular beam epitaxy. Atom probe tomography, transmission electron microscopy, and high resolution x-ray diffraction were used to verify the alloy composition and high quality of the films. Schottky diodes were then fabricated using Ni as the Schottky metal. Capacitance-voltage measurements revealed a very low (current-voltage (I-V) measurements performed at temperatures varying from 300 K to 500 K on the Schottky diodes. These measurements revealed that the apparent Schottky barrier height could have similar values for different compositions of β-(AlxGa1-x)2O3. We believe this is attributed to the lateral fluctuation in the alloy’s composition. This results in a lateral variation in the barrier height. Therefore, the average Schottky barrier height extracted from I-V measurements could be similar for β-(AlxGa1-x)2O3 films with different compositions.

  9. Oxygen flux influence on the morphological, structural and optical properties of Zn1-xMgxO thin films grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Su, S.C.; Lu, Y.M.; Zhang, Z.Z.; Li, B.H.; Shen, D.Z.; Yao, B.; Zhang, J.Y.; Zhao, D.X.; Fan, X.W.

    2008-01-01

    The Zn 1-x Mg x O thin films were grown on Al 2 O 3 substrate with various O 2 flow rates by plasma-assisted molecular beam epitaxy (P-MBE). The growth conditions were optimized by the characterizations of morphology, structural and optical properties. The Mg content of the Zn 1-x Mg x O thin film increases monotonously with decreasing the oxygen flux. X-ray diffractometer (XRD) measurements show that all the thin films are preferred (0 0 2) orientated. By transmittance and absorption measurements, it was found that the band gap of the film decreases gradually with increasing oxygen flow rate. The surface morphology dependent on the oxygen flow rate was also studied by field emission scanning electron microscopy (FE-SEM). The surface roughness became significant with increasing oxygen flow rate, and the nanostructures were formed at the larger flow rate. The relationship between the morphology and the oxygen flow rate of Zn 1-x Mg x O films was discussed

  10. On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy

    KAUST Repository

    Mishra, Pawan

    2016-05-23

    In this paper, c-plane stepped- and graded- InGaN/GaN multiple quantum wells (MQWs) are grown using plasma assisted molecular beam epitaxy (PAMBE) by in situ surface stoichiometry monitoring (i-SSM). Such a technique considerably reduces the strain build-up due to indium clustering within and across graded-MQWs; especially for QW closer to the top which results in mitigation of the quantum-confined Stark effect (QCSE). This is validated by a reduced power dependent photoluminescence blueshift of 10 meV in graded-MQWs as compared to a blueshift of 17 meV for stepped-MQWs. We further analyze microstrain within the MQWs, using Raman spectroscopy and geometrical phase analysis (GPA) on high-angle annular dark-field (HAADF)-scanning transmission electron microscope (STEM) images of stepped- and graded-MQWs, highlighting the reduction of ~1% strain in graded-MQWs over stepped-MQWs. Our analysis provides direct evidence of the advantage of graded-MQWs for the commercially viable c-plane light-emitting and laser diodes. © 2016 Optical Society of America.

  11. Properties of InSbN grown on GaAs by radio frequency nitrogen plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lim, K P; Yoon, S F; Pham, H T

    2009-01-01

    We report the growth of InSbN on a lattice-mismatched GaAs substrate using radio frequency nitrogen plasma-assisted molecular beam epitaxy. The effects of a two-step thin InSb buffer layer grown at 330 and 380 deg. C and substrate temperature (270-380 deg. C) on the properties of the InSbN are studied. The crystalline quality of the InSbN is significantly improved by the two-step buffer layer due to defect suppression. The shifting in the absorption edge of the InSbN from ∼5 to 8 μm following an increase in the substrate temperature is correlated with the reduction in free carrier concentration from ∼10 18 to 10 16 cm -3 and increase in concentration of N substituting Sb from ∼0.2 to 1%. These results will be beneficial to those working on the pseudo-monolithic integration of InSbN detectors on a GaAs platform.

  12. Ion-assisted laser deposition of intermediate layers for YBa2Cu3O7-δ thin film growth on polycrystalline and amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Reade, Ronald P. [Univ. of California, Berkeley, CA (United States)

    1993-11-01

    The growth of YBa2Cu3O7-δ (YBCO) high-temperature superconductor thin films has largely been limited to deposition on single-crystal substrates to date. In order to expand the range of potential applications, growth on polycrystalline and amorphous substrates is desirable. In particular, the deposition of YBCO thin films with high critical current densities on polycrystalline metal alloys would allow the manufacture of superconducting tapes. However, it is shown that it is not possible to grow YBCO thin films directly on this type of substrate due to chemical and structural incompatibility. This work investigates the use of a yttria-stabilized zirconia (YSZ) intermediate layer to address this problem. An ion-assisted pulsed-laser deposition process is developed to provide control of orientation during the growth of the YSZ layers. The important properties of YBCO and YSZ are summarized and the status of research on thin film growth of these materials is reviewed. An overview of the pulsed-laser deposition (PLD) technique is presented. The use of ion-assisted deposition techniques to control thin film properties is discussed.

  13. High-yield synthesis of SnO{sub 2} nanobelts by water-assisted chemical vapor deposition for sensor applications

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jing Bo, E-mail: jbzhang@iccas.ac.cn [Key Laboratory of Inorganic–Organic Hybrid Functional Material Chemistry, Ministry of Education, Tianjin Key Laboratory of Structure and Performance for Functional Molecules, College of Chemistry, Tianjin Normal University, Tianjin 300387 (China); Li, Xiao Ning [Key Laboratory of Inorganic–Organic Hybrid Functional Material Chemistry, Ministry of Education, Tianjin Key Laboratory of Structure and Performance for Functional Molecules, College of Chemistry, Tianjin Normal University, Tianjin 300387 (China); State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Bai, Shou Li; Luo, Rui Xian; Chen, Ai Fan [State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Lin, Yuan [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China)

    2012-11-15

    Highlights: ► The well crystalline and structurally uniform SnO{sub 2} nanobelts were prepared. ► Au-modified small Sn particle was used as source material to ensure the high yield. ► The SnO{sub 2} nanobelt exhibited better gas sensing property to NO{sub 2} than nanoparticle. ► The SnO{sub 2} nanobelt showed obvious sensing selectivity towards NO{sub 2} over CO and CH{sub 4}. -- Abstract: Well-crystallized one-dimensional (1D) SnO{sub 2} nanobelts were in situ prepared using a simple water-assisted chemical vapor deposition (CVD) method. The small Sn particles with Au-modifications were used as source materials instead of big size Sn grains to ensure the high yield of SnO{sub 2} belts. The Au layer was modified on the small Sn particles by treating Sn powders in HAuCl{sub 4} solution combined with the UV irradiation. The as-prepared SnO{sub 2} nanobelts were characterized by SEM, HRTEM, XRD, EDS and XPS. These results indicate that the growth temperature plays an important role in controlling the length-to-width ratio of nanobelts. The length-to-width ratio decreases with the growth temperature from 850 °C to 1000 °C. The nanobelts prepared at 850 °C shows a single-crystalline tetragonal rutile phase with a high length-to-width ratio (approximately tens of microns in length and 40–70 nm in width). However, below 850 °C, nanobelts cannot be formed. The as-prepared nanobelts exhibited excellent sensing properties compared with SnO{sub 2} nanoparticles and high sensing selectivity towards NO{sub 2}. The high sensing selectivity to NO{sub 2} is attributed to the oxygen vacancies presenting in the as-prepared nanobelts.

  14. Handbook of thin film deposition processes and techniques principles, methods, equipment and applications

    CERN Document Server

    Seshan, Krishna

    2002-01-01

    New second edition of the popular book on deposition (first edition by Klaus Schruegraf) for engineers, technicians, and plant personnel in the semiconductor and related industries. This book traces the technology behind the spectacular growth in the silicon semiconductor industry and the continued trend in miniaturization over the last 20 years. This growth has been fueled in large part by improved thin film deposition techniques and the development of highly specialized equipment to enable this deposition. The book includes much cutting-edge material. Entirely new chapters on contamination and contamination control describe the basics and the issues-as feature sizes shrink to sub-micron dimensions, cleanliness and particle elimination has to keep pace. A new chapter on metrology explains the growth of sophisticated, automatic tools capable of measuring thickness and spacing of sub-micron dimensions. The book also covers PVD, laser and e-beam assisted deposition, MBE, and ion beam methods to bring together a...

  15. Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

    Science.gov (United States)

    Tangi, Malleswararao; De, Arpan; Shivaprasad, S. M.

    2018-01-01

    We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 μm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm2/Vs for 1 μm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films.

  16. Review of 1064-nm damage tests of electron-beam deposited Ta2O5/SiO2 antireflection coatings

    International Nuclear Information System (INIS)

    Milam, D.; Rainer, F.; Lowdermilk, W.H.; Swain, J.E.; Carniglia, C.K.; Hart, T.T.

    1981-01-01

    Damage tests of Ta 2 O 5 /SiO 2 antireflection films deposited under a variety of conditions showed that thresholds of films deposited at 175 0 C were greater than thresholds of films deposited at either 250 0 C or 325 0 C. Deposition at high rate and low oxygen pressure produced highly absorptive films with low thresholds. Thresholds did not correlate with film reflectivity or net stress in the films, and correlated with film absorption only when the film absorption was greater than 10 4 ppM. Baking the films for four hours at 400 0 C reduced film absorption, altered net film stress, and produced an increase in the average damage threshold

  17. Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy

    KAUST Repository

    Tangi, Malleswararao

    2016-07-26

    The dislocation free Inx Al 1-xN nanowires (NWs) are grown on Si(111) by nitrogen plasma assisted molecular beam epitaxy in the temperature regime of 490 °C–610 °C yielding In composition ranges over 0.50 ≤ x ≤ 0.17. We study the optical properties of these NWs by spectroscopic ellipsometry (SE), photoluminescence, and Raman spectroscopies since they possesses minimal strain with reduced defects comparative to the planar films. The optical bandgap measurements of Inx Al 1-xN NWs are demonstrated by SE where the absorption edges of the NW samples are evaluated irrespective of substrate transparency. A systematic Stoke shift of 0.04–0.27 eV with increasing x was observed when comparing the micro-photoluminescence spectra with the Tauc plot derived from SE. The micro-Raman spectra in the NWs with x = 0.5 showed two-mode behavior for A1(LO) phonons and single mode behavior for E2 H phonons. As for x = 0.17, i.e., high Al content, we observed a peculiar E2 H phonon mode splitting. Further, we observe composition dependent frequency shifts. The 77 to 600 K micro-Raman spectroscopy measurements show that both AlN- and InN-like modes of A1(LO) and E2 H phonons in Inx Al 1-xN NWs are redshifted with increasing temperature, similar to that of the binary III group nitride semiconductors. These studies of the optical properties of the technologically important Inx Al 1-xN nanowires will path the way towards lasers and light-emitting diodes in the wavelength of the ultra-violet and visible range.

  18. Fabrication of 100 A class, 1 m long coated conductor tapes by metal organic chemical vapor deposition and pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V.; Lee, H.G.; Li, Y.; Xiong, X.; Qiao, Y.; Reeves, J.; Xie, Y.; Knoll, A.; Lenseth, K

    2003-10-15

    SuperPower has been scaling up YBa{sub 2}Cu{sub 3}O{sub x}-based second-generation superconducting tapes by techniques such as pulsed laser deposition (PLD) using industrial laser and metal organic chemical vapor deposition (MOCVD). Both techniques offer advantage of high deposition rates, which is important for high throughput. Using highly-polished substrates produced in a reel-to-reel polishing facility and buffer layers deposited in a pilot ion beam assisted deposition facility, meter-long second-generation high temperature superconductor tapes have been produced. 100 A class, meter-long coated conductor tapes have been reproducibly demonstrated in this work by both MOCVD and PLD. The best results to date are 148 A over 1.06 m by MOCVD and 135 A over 1.1 m by PLD using industrial laser.

  19. Directed vapor deposition

    Science.gov (United States)

    Groves, James Frederick

    This dissertation describes the invention, design, construction, experimental evaluation and modeling of a new physical vapor deposition technique (U.S. Patent #5,534,314) for high rate, efficient deposition of refractory elements, alloys, and compounds onto flat or curved surfaces. The new Directed Vapor Deposition (DVD) technique examined in this dissertation was distinct from previous physical vapor deposition techniques because it used low vacuum electron beam (e-beam) evaporation in combination with a carrier gas stream to transport and vapor spray deposit metals, ceramics, and semiconducting materials. Because of the system's unique approach to vapor phase materials processing, detailed analyses of critical concepts (e.g. the e-beam accelerating voltage and power required for evaporation, the vacuum pumping capacity necessary to generate specific gas flow velocities exiting a nozzle) were used to reduce to practice a functioning materials synthesis tool. After construction, the ability to create low contamination films of pure metals, semi-conducting materials, and compounds via this new method was demonstrated, and oxide deposition using an oxygen-doped gas stream in combination with a pure metal evaporant source was shown to be feasible. DVD vapor transport characteristics were experimentally investigated with deposition chamber pressure, carrier gas type, and e-beam power being identified as major processing parameters which affected vapor atom trajectories. The low vacuum carrier gas streams employed in DVD showed a dramatic ability to focus the vapor stream during transport to the substrate and thereby enhance material deposition rates and efficiencies significantly under certain process conditions. Conditions for maximum deposition efficiency onto flat substrates and continuous fibers were experimentally identified by varying chamber pressure, carrier gas velocity (Mach number), and e-beam power. Deposition efficiencies peaked at about 0.5 Torr when

  20. Protective Sliding Carbon-Based Nanolayers Prepared by Argon or Nitrogen Ion-Beam Assisted Deposition on Ti6Al4V Alloy

    Czech Academy of Sciences Publication Activity Database

    Vlčák, P.; Jirka, Ivan

    2016-01-01

    Roč. 2016, č. 2016 (2016), 1697090 ISSN 1687-4110 Institutional support: RVO:61388955 Keywords : carbon-based nanolayers * Ti6Al4V * nanotechnology Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.871, year: 2016

  1. Denton E-beam Evaporator #1

    Data.gov (United States)

    Federal Laboratory Consortium — Description:CORAL Name: E-Beam Evap 1This is a dual e-beam/thermal evaporator for the deposition of metal and dielectric thin films. Materials available are: Ag, Al,...

  2. Assistência de ar e volumes de aplicação na deposição de calda e no controle do arroz vermelho (Oryza sativa L. Air assistance and volume of application in spray deposition and in red rice control (Oryza sativa L.

    Directory of Open Access Journals (Sweden)

    Leopoldo L. S. Vigano

    2007-12-01

    Full Text Available O trabalho teve como objetivo avaliar o efeito da assistência de ar junto à barra pulverizadora e de três volumes de pulverização na dessecação e deposição da calda em arroz vermelho, sob cultivo de nabo forrageiro, em áreas de recuperação de várzeas, utilizando o herbicida paraquat e o corante Azul Brilhante, respectivamente. Os volumes de pulverização foram 100; 200 e 300 L ha-1 da solução aquosa, contendo corante alimentício (1.500 mg L-1. Com ou sem a assistência de ar junto à barra, foram utilizadas pontas de pulverização de jato plano tipo AXI 110015 à pressão de 117,3 kPa, AXI 11002 e AXI 11003 a 276 kPa. A avaliação da deposição da pulverização deu-se em folhas de plantas de arroz vermelho. Os maiores volumes (200 e 300 L ha-1 pulverizados com a assistência de ar junto à barra pulverizadora proporcionaram maiores depósitos do corante em relação ao volume de 100 L ha-1. Não foram constatadas diferenças na deposição do corante para os volumes pulverizados, sem a assistência de ar junto à barra, tampouco entre os volumes de 200 e 300 L ha-1 com a assistência de ar junto à barra. As maiores percentagens de controle do arroz vermelho foram obtidas com a assistência de ar junto à barra, independentemente do volume pulverizado, equivalendo-se ao controle obtido com 300 L ha-1, sem o uso dessa tecnologia.The aim of this research was to evaluate the effect of air-assistance on spraying at three volumes in spray deposition and control of red rice under fodder radish cultivation. To evaluate the control of this weed and spray deposition were used paraquat herbicide and a Brilliant Blue dye, respectively. The three spraying volumes were 100, 200 and 300 L ha-1, using a tracer dye at 1,500 mg L-1. Both solutions and volumes were sprayed with flat fan nozzles AXI 110015 at 117.3 kPa, AXI 11002 and AXI 11003 at 276 kPa, respectively, with and without air-assistance on the boom. The evaluation of deposition

  3. m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates

    International Nuclear Information System (INIS)

    Armitage, R.; Horita, M.; Suda, J.; Kimoto, T.

    2007-01-01

    A series of m-plane GaN layers with the Ga beam-equivalent pressure (BEP) as the only varied parameter was grown by rf-plasma assisted molecular beam epitaxy on m-plane 4H-SiC substrates using AlN buffer layers. The smoothest growth surfaces and most complete film coalescence were found for the highest Ga BEP corresponding to the Ga droplet accumulation regime. However, better structural quality as assessed by x-ray rocking curves was observed for growth at a lower Ga BEP value below the droplet limit. The variation of rocking curve widths for planes inclined with respect to the epilayer c axis followed a different trend with Ga BEP than those of reflections parallel to the c axis. The GaN layers were found to exhibit a large residual compressive strain along the a axis

  4. Plasma-surface interaction at sharp edges and corners during ion-assisted physical vapor deposition. Part I: Edge-related effects and their influence on coating morphology and composition

    International Nuclear Information System (INIS)

    Macak, E.B.; Muenz, W.-D.; Rodenburg, J.M.

    2003-01-01

    Ion-assisted physical vapor deposition (PVD) is a common industrial method for growing thin coatings of various interstitial nitride alloys. The interaction between the ions and three-dimensional nonflat samples during the deposition can, however, lead to unwanted local changes in the properties of the coating and thus its performance. We analyze the characteristics of the ion bombardment during ion-assisted PVD on sharp convex substrates and their effect on the growing coating. We show that the magnitude and the spatial extent of the edge-related changes are directly related to the characteristics of the plasma sheath around the biased edges. We examine the influence of the edge geometry and the deposition conditions. The edge-related effects are studied on the example of wedge-shaped samples coated with TiAlN/VN by closed-field unbalanced magnetron deposition process using high-flux low-energy Ar + -ion irradiation (J i /J me ∼4, E i =75-150 eV). The samples are analyzed by scanning electron microscopy and energy-dispersive x-ray spectroscopy. Significant changes in the morphology, thickness, and composition of the coatings are found in the edge region. In order to account for the changes, we apply a self-consistent model of the plasma sheath around wedge-shaped samples proposed by Watterson [J. Phys. D 22, 1300 (1989)], to our conditions. For a 30 deg. wedge coated at -150 V, the resputtering rate in the edge region is found to be increased by up to ten times as compared to flat substrate areas. The effect is due to the combined action of an increased ion flux and increased sputtering yield as a result of the nonperpendicular angle of incidence of ions in the edge region. The situation at sharp corners, where even more severe effects are observed, is analyzed and modeled in the companion article E. B. Macak et al., J. Appl. Phys. (2003) (Part II)

  5. Production of BiPbSrCaCuO thin films on MgO and Ag/MgO substrates by electron beam deposition techniques

    CERN Document Server

    Varilci, A; Gorur, O; Celebi, S; Karaca, I

    2002-01-01

    Superconducting BiPbSrCaCuO thin films were prepared on MgO(001) and Ag/MgO substrates using an electron beam (e-beam) evaporation technique. The effects of annealing temperature and Ag diffusion on the crystalline structure and some superconducting properties, respectively, were investigated by X-ray diffraction, atomic force microscopy, and by measurements of the critical temperature and the critical current density. It was shown that an annealing of both types of films at 845 or 860 C resulted in the formation of mixed Bi-2223 and Bi-2212 phases with a high degree of preferential orientation with the c-axis perpendicular to the substrates. The slight increase of the critical temperature from 103 K to 105 K, the enhancement of the critical current density from 2 x 10 sup 3 to 6 x 10 sup 4 A/cm sup 2 , and the improved surface smoothness are due to a possible silver doping from the substrate. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  6. Double-ceramic-layer thermal barrier coatings based on La{sub 2}(Zr{sub 0.7}Ce{sub 0.3}){sub 2}O{sub 7}/La{sub 2}Ce{sub 2}O{sub 7} deposited by electron beam-physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Z.H. [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); He, L.M., E-mail: he_limin@yahoo.com [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Mu, R.D.; He, S.M.; Huang, G.H. [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Cao, X.Q., E-mail: xcao@ciac.jl.cn [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

    2010-03-15

    Double-ceramic-layer (DCL) thermal barrier coatings (TBCs) of La{sub 2}(Zr{sub 0.7}Ce{sub 0.3}){sub 2}O{sub 7} (LZ7C3) and La{sub 2}Ce{sub 2}O{sub 7} (LC) were deposited by electron beam-physical vapor deposition (EB-PVD). The composition, interdiffusion, surface and cross-sectional morphologies, cyclic oxidation behavior of DCL coating were studied. Energy dispersive spectroscopy and X-ray diffraction analyses indicate that both LZ7C3 and LC coatings are effectively fabricated by a single LZ7C3 ingot with properly controlling the deposition energy. The chemical compatibility of LC coating and thermally grown oxide (TGO) layer is unstable. LaAlO{sub 3} is formed due to the chemical reaction between LC and Al{sub 2}O{sub 3} which is the main composition of TGO layer. Additionally, the thermal cycling behavior of DCL coating is influenced by the interdiffusion of Zr and Ce between LZ7C3 and LC coatings. The failure of DCL coating is a result of the sintering of LZ7C3 coating surface, the chemical incompatibility of LC coating and TGO layer and the abnormal oxidation of bond coat. Since no single material that has been studied so far satisfies all the requirements for high temperature applications, DCL coating is an important development direction of TBCs.

  7. Practical applications of ion beam and plasma processing for improving corrosion and wear protection

    CERN Document Server

    Klingenberg, M L; Wei, R; Demaret, J; Hirvonen, J

    2002-01-01

    A multi-year project for the US Army has been investigating the use of various ion beam and plasma-based surface treatments to improve the corrosion and wear properties of military hardware. These processes are intended to be complementary to, rather than competing with, other promising macro scale coating processes such high velocity oxy-fuel (HVOF) deposition, particularly in non-line-of- sight and flash chrome replacement applications. It is believed that these processes can improve the tribological and corrosion behavior of parts without significantly altering the dimensions of the part, thereby eliminating the need for further machining operations and reducing overall production costs. The ion beam processes chosen are relatively mature, low-cost processes that can be scaled-up. The key methods that have been considered under this program include nitrogen ion implantation into electroplated hard chrome, ion beam assisted chromium and chromium nitride coatings, and plasma-deposited diamond- like carbon an...

  8. Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

    International Nuclear Information System (INIS)

    Merckling, C.; Franquet, A.; Vincent, B.; Vandervorst, W.; Loo, R.; Caymax, M.; Sun, X.; Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Zaima, S.

    2011-01-01

    We investigated the molecular beam deposition of Al 2 O 3 on Ge 0.95 Sn 0.05 surface with and without an ultra thin Ge cap layer in between. We first studied the atomic configuration of both Ge 1-x Sn x and Ge/Ge 1-x Sn x surfaces after deoxidation by reflection high-energy electron diffraction and resulted, respectively, in a c(4x2) and (2x1) surface reconstructions. After in situ deposition of an Al 2 O 3 high-κ gate dielectric we evidenced using time-of-flight secondary ion mass spectroscopy analyses that Sn diffusion was at the origin of high leakage current densities in the Ge 1-x Sn x /Al 2 O 3 gate stack. This damage could be avoided by inserting a thin 5-nm-thick Ge cap between the oxide and the Ge 1-x Sn x layer. Finally, metal-oxide-semiconductor capacitors on the Ge capped sample showed well-behaved capacitance-voltage (C-V) characteristics with interface trap density (D it ) in the range of 10 12 eV -1 cm -2 in mid gap and higher close to the valence band edge.

  9. Friction and wear study of diamond-like carbon gradient coatings on Ti6Al4V substrate prepared by plasma source ion implant-ion beam enhanced deposition

    International Nuclear Information System (INIS)

    Jiang, Shuwen; Jiang Bin; Li Yan; Li Yanrong; Yin Guangfu; Zheng Changqiong

    2004-01-01

    DLC gradient coatings had been deposited on Ti6Al4V alloy substrate by plasma source ion implantation-ion beam enhanced deposition method and their friction and wear behavior sliding against ultra high molecular weight polyethylene counterpart were investigated. The results showed that DLC gradient coated Ti6Al4V had low friction coefficient, which reduced 24, 14 and 10% compared with non-coated Ti6Al4V alloy under dry sliding, lubrication of bovine serum and 0.9% NaCl solution, respectively. DLC gradient coated Ti6Al4V showed significantly improved wear resistance, the wear rate was about half of non-coated Ti6Al4V alloy. The wear of ultra high molecular weight polyethylene counterpart was also reduced. High adhesion to Ti6Al4V substrate of DLC gradient coatings and surface structure played important roles in improved tribological performance, serious oxidative wear was eliminated when DLC gradient coating was applied to the Ti6Al4V alloy

  10. SEDIMENTARY FEATURES OF TSUNAMI BACKWASH DEPOSITS AS ASSESSED BY MICRO-BEAM SYNCHROTRON X-RAY FLUORESCENCE (μ-SXRF AT THE SIAM PHOTON LABORATORY

    Directory of Open Access Journals (Sweden)

    Siwatt Pongpiachan

    2013-01-01

    Full Text Available Over the past few years, several attempts have been performed to find alternative “chemical proxies” in order to discriminate “tsunami backwash deposits” from “typical marine sediments”. A wide range of statistical tools has been selected in order to investigate the sediments and/or terrestrial soils transportation mechanism during the tsunami inundation period by using several types of chemical tracers. To relate the physical and chemical characteristics of Typical Marine Sediments (TMS,Tsunami Backwash Deposits (TBD, Onshore Tsunami Deposits (OTD and Coastal Zone Soils (CZS with their synchrotron radiation based micro-X-ray Fluorescence (μ-SXRF spectra, the μ- SXRF spectra were built in the appropriate selected spectra range from 3,000 eV to 8,000 eV. Further challenges were considered by using the first-order derivative μ-SXRF spectra coupled with Probability Distribution Function (PDF, Hierarchical Cluster Analysis (HCA and Principal Component Analysis (PCA in order to investigate the elemental distribution characteristics in various types of terrestrial soils and marine sediments. Dendrographic classifications and multi-dimensional plots of principal components (i.e. bi-polar and three dimensional plots could indicate the impacts of terrestrial soils and/or marine sediments transport on onshore and/or offshore during the tsunami inundation period. Obviously, these advanced statistical analyses are quite useful and provide valuable information and thus shed new light on the study of paleotsunami.

  11. Estimation of the spatial energy deposition in CA1 pyramidal neurons under exposure to 12C and 56Fe ion beams

    Directory of Open Access Journals (Sweden)

    Munkhbaatar Batmunkh

    2015-10-01

    Full Text Available The exposure to heavy charged particles represents a significant risk to the central nervous system. In experiments with rodents, the irradiation with heavy ions induces a prolonged deficit in hippocampus-dependent learning and memory. The exact nature of these violations remains mostly unclear. In this regard, the estimation of radiation effects at the level of single neurons is of our special interest. The present study demonstrates the results of comparative calculations that are performed to clarify the early physical events in single neurons under the exposure to accelerated 12C and 56Fe ions with different parameters. Using the Geant4-based Monte Carlo simulations, the radiation effects are considered in terms of energy and dose deposition. The spatial patterns of energy and dose depositions within a single neural cell are produced. As additional characteristics, the spectra of the specific energy and energy imparted are estimated. Our results show that the cell morphology is an important factor determining the accumulation of radiation dose in neurons under the exposure to heavy ions. The data obtained suggest a possibility of radiation damage to synapses that are considered to play an important role in radiation-induced violations of hippocampus-dependent learning and memory.

  12. Nanoscale Phase Separation in Fe3O4(111) Films on Sapphire(0001) and Phase Stability of Fe3O4(001) Films on MgO(001) Grown by Oxygen-Plasma-Assisted Molecular Beam Epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Toney, Michael F

    2003-06-25

    We report a phase instability in oxygen-plasma-assisted molecular beam epitaxy of Fe{sub 3}O{sub 4} films on sapphire (0001) substrates. Under a wide range of growth conditions, Fe{sub 3}O{sub 4} (111) films phase separate, on a nanometer length scale, into Fe{sub 3}O{sub 4}, Fe0 and metallic Fe, which is attributed to formation of the thermodynamically unstable phase Fe0 in the initial stages of (111) growth. In contrast, Fe{sub 3}O{sub 4} (001) films, grown simultaneously on MgO(001) substrates, do not exhibit this phase instability. We specify growth conditions for which single-phase, epitaxial Fe{sub 3}O{sub 4} (111) films can be grown by plasma-assisted molecular beam epitaxy or by reactive evaporation of Fe in molecular oxygen. Film orientation and phase separation strongly influence magnetic properties. Single-phase Fe{sub 3}O{sub 4} (111) films are much more difficult to magnetize than Fe{sub 3}O{sub 4} (001) films and phase separation makes the films even more difficult to magnetize.

  13. n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Han, Sang-Heon; Mauze, Akhil; Ahmadi, Elaheh; Mates, Tom; Oshima, Yuichi; Speck, James S.

    2018-04-01

    Ge and Sn as n-type dopants in (001) β-Ga2O3 films were investigated using plasma-assisted molecular beam epitaxy. The Ge concentration showed a strong dependence on the growth temperature, whereas the Sn concentration remains independent of the growth temperature. The maximum growth temperature at which a wide range of Ge concentrations (from 1017 to 1020 cm-3) could be achieved was 675 °C while the same range of Sn concentration could be achieved at growth temperature of 750 °C. Atomic force microscopy results revealed that higher growth temperature shows better surface morphology. Therefore, our study reveals a tradeoff between higher Ge doping concentration and high quality surface morphology on (001) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy. The Ge doped films had an electron mobility of 26.3 cm2 V-1 s-1 at the electron concentration of 6.7 × 1017 cm-3 whereas the Sn doped films had an electron mobility of 25.3 cm2 V-1 s-1 at the electron concentration of 1.1 × 1018 cm-3.

  14. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  15. Deposition mechanism and microstructure of laser-assisted cold-sprayed (LACS) Al-12 wt.%Si coatings: effects of laser power

    CSIR Research Space (South Africa)

    Olakanmi, EO

    2013-06-01

    Full Text Available at the substrate and build up a coating. To circumvent the processing problems associated with cold-spray (CS) deposition of low-temperature, corrosion-resistant Al-12 wt.%Si coatings, a preliminary investigation detailing the effect of laser power on its LACS...

  16. Sharp transition from ripple patterns to a flat surface for ion beam erosion of Si with simultaneous co-deposition of iron

    Directory of Open Access Journals (Sweden)

    K. Zhang

    2012-09-01

    Full Text Available We investigate pattern formation on Si by sputter erosion under simultaneous co-deposition of Fe atoms, both at off-normal incidence, as function of the Fe surface coverage. The patterns obtained for 5 keV Xe ion irradiation at 30° incidence angle are analyzed with atomic force microscopy. Rutherford backscattering spectroscopy of the local steady state Fe content of the Fe-Si surface layer allows a quantitative correlation between pattern type and Fe coverage. With increasing Fe coverage the patterns change, starting from a flat surface at low coverage (1.8×1016 Fe/cm2. Our results confirm the observations by Macko et al. for 2 keV Kr ion irradiation of Si with Fe co-deposition. In particular, we also find a sharp transition from pronounced ripple patterns with large amplitude (rms roughness ∼ 18 nm to a rather flat surface (rms roughness ∼ 0.5 nm. Within this transition regime, we also observe the formation of pill bug structures, i.e. individual small hillocks with a rippled structure on an otherwise rather flat surface. The transition occurs within a very narrow regime of the steady state Fe surface coverage between 1.7 and 1.8×1016 Fe/cm2, where the composition of the mixed Fe-Si surface layer of about 10 nm thickness reaches the stoichiometry of FeSi2. Phase separation towards amorphous iron silicide is assumed as the major contribution for the pattern formation at lower Fe coverage and the sharp transition from ripple patterns to a flat surface.

  17. Laser Induced Chemical Liquid Phase Deposition (LCLD)

    International Nuclear Information System (INIS)

    Nánai, László; Balint, Agneta M.

    2012-01-01

    Laser induced chemical deposition (LCLD) of metals onto different substrates attracts growing attention during the last decade. Deposition of metals onto the surface of dielectrics and semiconductors with help of laser beam allows the creation of conducting metal of very complex architecture even in 3D. In the processes examined the deposition occurs from solutions containing metal ions and reducing agents. The deposition happens in the region of surface irradiated by laser beam (micro reactors). Physics -chemical reactions driven by laser beam will be discussed for different metal-substrate systems. The electrical, optical, mechanical properties of created interfaces will be demonstrated also including some practical-industrial applications.

  18. Laser Induced Chemical Liquid Phase Deposition (LCLD)

    Energy Technology Data Exchange (ETDEWEB)

    Nanai, Laszlo; Balint, Agneta M. [University of Szeged, JGYPK, Department of General and Environmental Physics H-6725 Szeged, Boldogasszony sgt. 6 (Hungary); West University of Timisoara, Faculty of Physics, Department of Physics, Bulv. V. Parvan 4, Timisoara 300223 (Romania)

    2012-08-17

    Laser induced chemical deposition (LCLD) of metals onto different substrates attracts growing attention during the last decade. Deposition of metals onto the surface of dielectrics and semiconductors with help of laser beam allows the creation of conducting metal of very complex architecture even in 3D. In the processes examined the deposition occurs from solutions containing metal ions and reducing agents. The deposition happens in the region of surface irradiated by laser beam (micro reactors). Physics -chemical reactions driven by laser beam will be discussed for different metal-substrate systems. The electrical, optical, mechanical properties of created interfaces will be demonstrated also including some practical-industrial applications.

  19. Cost of New Technologies in Prostate Cancer Treatment: Systematic Review of Costs and Cost Effectiveness of Robotic-assisted Laparoscopic Prostatectomy, Intensity-modulated Radiotherapy, and Proton Beam Therapy.

    Science.gov (United States)

    Schroeck, Florian Rudolf; Jacobs, Bruce L; Bhayani, Sam B; Nguyen, Paul L; Penson, David; Hu, Jim

    2017-11-01

    Some of the high costs of robot-assisted radical prostatectomy (RARP), intensity-modulated radiotherapy (IMRT), and proton beam therapy may be offset by better outcomes or less resource use during the treatment episode. To systematically review the literature to identify the key economic trade-offs implicit in a particular treatment choice for prostate cancer. We systematically reviewed the literature according to the Preferred Reporting Items for Systematic Reviews and Meta-analyses (PRISMA) statement and protocol. We searched Medline, Embase, and Web of Science for articles published between January 2001 and July 2016, which compared the treatment costs of RARP, IMRT, or proton beam therapy to the standard treatment. We identified 37, nine, and three studies, respectively. RARP is costlier than radical retropubic prostatectomy for hospitals and payers. However, RARP has the potential for a moderate cost advantage for payers and society over a longer time horizon when optimal cancer and quality-of-life outcomes are achieved. IMRT is more expensive from a payer's perspective compared with three-dimensional conformal radiotherapy, but also more cost effective when defined by an incremental cost effectiveness ratio new versus traditional technologies is costlier. However, given the low quality of evidence and the inconsistencies across studies, the precise difference in costs remains unclear. Attempts to estimate whether this increased cost is worth the expense are hampered by the uncertainty surrounding improvements in outcomes, such as cancer control and side effects of treatment. If the new technologies can consistently achieve better outcomes, then they may be cost effective. We review the cost and cost effectiveness of robot-assisted radical prostatectomy, intensity-modulated radiotherapy, and proton beam therapy in prostate cancer treatment. These technologies are costlier than their traditional counterparts. It remains unclear whether their use is associated

  20. Atomic scale modelling of nanosize Ni sub 3 Al cluster beam deposition on Al, Ni and Ni sub 3 Al (1 1 1) surfaces

    CERN Document Server

    Kharlamov, V S; Hou, M

    2002-01-01

    The slowing down of Ni sub 3 Al clusters on a Al, Ni and Ni sub 3 Al (1 1 1) surfaces is studied by atomic scale modelling. The semi-grand canonical metropolis Monte Carlo is used for the preparation of isolated clusters at thermodynamic equilibrium. The cluster deposition on the surface is studied in detail by classical Molecular Dynamics simulations that include a model to account for electron-phonon coupling. Long- and short-range orders in the cluster are evaluated as functions of temperature in an impact energy range between 0 and 1.5 eV/atom. The interaction between the Ni sub 3 Al cluster and an Al surface is characterised low short range (chemical) disorder. No sizeable epitaxy is found, subsequent to the impact. In contrast, in the case of Ni and Ni sub 3 Al substrates, which are harder materials than aluminium, the chemical disorder is higher and epitaxial accommodation is possible. With these substrates, chemical disorder in the cluster is an increasing function of the impact energy, as well as of ...