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Sample records for based zno film

  1. Morphological, Mechanical and Thermal Study of ZnO Nanoparticle Reinforced Chitosan Based Transparent Biocomposite Films

    Science.gov (United States)

    Das, Kunal; Maiti, Sonakshi; Liu, Dagang

    2014-04-01

    Chitosan based biocomposite transparent films reinforced with zinc oxide (ZnO) nanoparticles at different loading i.e. 2, 4 and 6 wt% were successfully prepared by solution casting method. Shape, size and geometry of the zinc oxide nanoparticles were characterized by scanning electron microscopy (SEM). The biocomposite films were subjected to mechanical characterization, thermal analysis, morphology study and moisture uptake behaviour. The characterization tools used here include wide angle X-ray diffraction study, scanning electron microscopic analysis, differential scanning calorimetric analysis and also UV-visible transmittance behavior. SEM micrographs revealed uniformly dispersed ZnO nanoparticles in biocomposite films. Improvement of the tensile strength about 133 % was observed significantly in case of 4 wt% loaded chitosan/ZnO films with respect to the neat chitosan film. 43 % higher transparency was observed in case of 2 wt% ZnO loaded biocomposites films, thus indicating the best combination of properties of 2 wt% ZnO loaded biocomposite films.

  2. Growth of hierarchical based ZnO micro/nanostructured films and their tunable wettability behavior

    Science.gov (United States)

    Suresh Kumar, P.; Dhayal Raj, A.; Mangalaraj, D.; Nataraj, D.; Ponpandian, N.; Li, Lin; Chabrol, G.

    2011-05-01

    Hierarchical zinc oxide (ZnO) micro/nanostructured thin films were grown onto as-prepared and different annealed ZnO seed layer films by a simple two step chemical process. A cost effective successive ionic layer adsorption and reaction (SILAR) method was employed to grow the seed layer films at optimal temperature (80 °C) and secondly, different hierarchical based ZnO structured thin films were deposited over the seed layered films by chemical bath deposition (CBD). The influence of seed layer on the structural, surface morphological, optical and wettability behavior of the ZnO thin films were systematically investigated. The XRD analysis confirms the high crystalline nature of both the seed layer and corresponding ZnO micro/nanostructured films with a perfect hexagonal structure oriented along (0 0 2) direction. The surface morphology revels a complex and orientated hierarchical based ZnO structured films with diverse shapes from plates to hexagonal rod-like crystal to tube-like structure and even much more complex needle-like shapes during secondary nucleation, by changing the seed layer conditions. The water contact angle (WCA) measurements on hierarchical ZnO structured films are completely examined to study its surface wettability behavior for its suitability in future self-cleaning application. Photoluminescence (PL) spectra of the ZnO structured film exhibit UV and visible emissions in the range of 420-500 nm. The present approach demonstrates its potential for low-temperature, large-scale, controlled synthesis of crystalline hierarchical ZnO nanostructures films.

  3. ZnO based transparent conductive oxide films with controlled type of conduction

    Energy Technology Data Exchange (ETDEWEB)

    Zaharescu, M., E-mail: mzaharescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Mihaiu, S., E-mail: smihaiu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Toader, A. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Atkinson, I., E-mail: irinaatkinson@yahoo.com [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Calderon-Moreno, J.; Anastasescu, M.; Nicolescu, M.; Duta, M.; Gartner, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Vojisavljevic, K.; Malic, B. [Institute Jožef Stefan, Ljubljana (Slovenia); Ivanov, V.A.; Zaretskaya, E.P. [State Scientific and Production Association “Scientific-Practical Materials Research Center of the National Academy of Science Belarus, P. Brovska str.19, 220072, Minsk (Belarus)

    2014-11-28

    The transparent conductive oxide films with controlled type of conduction are of great importance and their preparation is intensively studied. In our work, the preparation of such films based on doped ZnO was realized in order to achieve controlled type of conduction and high concentration of the charge carriers. Sol–gel method was used for films preparation and several dopants were tested (Sn, Li, Ni). Multilayer deposition was performed on several substrates: SiO{sub 2}/Si wafers, silica-soda-lime and/or silica glasses. The structural and morphological characterization of the obtained films were done by scanning electron microscopy, X-ray diffraction, X-ray fluorescence, X-ray photoelectron spectroscopy and atomic force microscopy respectively, while spectroscopic ellipsometry and transmittance measurements were done for determination of optical properties. The selected samples with the best structural, morphological and optical properties were subjected to electrical measurement (Hall and Seebeck effect). In all studied cases, samples with good adherence and homogeneous morphology as well as monophasic wurtzite type structure were obtained. The optical constants (refractive index and extinction coefficient) were calculated from spectroscopic ellipsometry data using Cauchy model. Films with n- or p-type conduction were obtained depending on the composition, number of deposition and thermal treatment temperature. - Highlights: • Transparent conductive ZnO based thin films were prepared by the sol–gel method. • Controlled type of conduction is obtained in (Sn, Li) doped and Li-Ni co-doped ZnO films. • Hall and Seebeck measurements proved the p-type conductivity for Li-Ni co-doped ZnO films. • The p-type conductivity was maintained even after 4-months of storage. • Influence of dopant- and substrate-type on the ZnO films properties was established.

  4. Disposable urea biosensor based on nanoporous ZnO film fabricated from omissible polymeric substrate.

    Science.gov (United States)

    Rahmanian, Reza; Mozaffari, Sayed Ahmad; Abedi, Mohammad

    2015-12-01

    In the present study, a facile and simple fabrication method of a semiconductor based urea biosensor was reported via three steps: (i) producing a ZnO-PVA composite film by means of a polymer assisted electrodeposition of zinc oxide (ZnO) on the F-doped SnO2 conducting glass (FTO) using water soluble polyvinyl alcohol (PVA), (ii) obtaining a nanoporous ZnO film by PVA omission via a subsequent post-treatment by annealing of the ZnO-PVA film, and (iii) preparation of a FTO/ZnO/Urs biosensor by exploiting a nanoporous ZnO film as an efficient and excellent platform area for electrostatic immobilization of urease enzyme (Urs) which was forced by the difference in their isoelectric point (IEP). The characterization techniques focused on the analysis of the ZnO-PVA film surfaces before and after annealing, which had a prominent effect on the porosity of the prepared ZnO film. The surface characterization of the nanostructured ZnO film by a field emission-scanning electron microscopy (FE-SEM), exhibited a film surface area as an effective bio-sensing matrix for enzyme immobilization. The structural characterization and monitoring of the biosensor fabrication was performed using UV-Vis, Fourier Transform Infrared (FT-IR), Raman Spectroscopy, Thermogravimetric Analysis (TGA), Cyclic Voltammetry (CV), and Electrochemical Impedance Spectroscopy (EIS) techniques. The impedimetric results of the FTO/ZnO/Urs biosensor showed a high sensitivity for urea detection within 8.0-110.0mg dL(-1) with the limit of detection as 5.0mg dL(-1).

  5. Solution-based synthesis of cobalt-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vempati, Sesha [School of Mathematics and Physics, Queen' s University Belfast, BT7 1NN (United Kingdom); Shetty, Amitha [Materials Research Center, Indian Institute of Science, Bangalore 560012 (India); Dawson, P., E-mail: p.dawson@qub.ac.uk [School of Mathematics and Physics, Queen' s University Belfast, BT7 1NN (United Kingdom); Nanda, K.K.; Krupanidhi, S.B. [Materials Research Center, Indian Institute of Science, Bangalore 560012 (India)

    2012-12-01

    Undoped and cobalt-doped (1-4 wt.%) ZnO polycrystalline, thin films have been fabricated on quartz substrates using sequential spin-casting and annealing of simple salt solutions. X-ray diffraction (XRD) reveals a wurzite ZnO crystalline structure with high-resolution transmission electron microscopy showing lattice planes of separation 0.26 nm, characteristic of (002) planes. The Co appears to be tetrahedrally co-ordinated in the lattice on the Zn sites (XRD) and has a charge of + 2 in a high-spin electronic state (X-ray photoelectron spectroscopy). Co-doping does not alter the wurzite structure and there is no evidence of the precipitation of cobalt oxide phases within the limits of detection of Raman and XRD analysis. Lattice defects and chemisorbed oxygen are probed using photoluminescence and Raman spectroscopy - crucially, however, this transparent semiconductor material retains a bandgap in the ultraviolet (3.30-3.48 eV) and high transparency (throughout the visible spectral regime) across the doping range. - Highlights: Black-Right-Pointing-Pointer Simple solution-based method for the fabrication of Co-doped ZnO thin films. Black-Right-Pointing-Pointer Evidence for Co substitution on Zn sites in + 2 oxidation state. Black-Right-Pointing-Pointer ZnO, with up to 4% Co doping, retains high transparency across visible spectrum. Black-Right-Pointing-Pointer Quenching of exciton photoluminescence linked to chemisorbed oxygen in Co-doped ZnO.

  6. Disposable urea biosensor based on nanoporous ZnO film fabricated from omissible polymeric substrate

    Energy Technology Data Exchange (ETDEWEB)

    Rahmanian, Reza; Mozaffari, Sayed Ahmad, E-mail: mozaffari@irost.ir; Abedi, Mohammad

    2015-12-01

    In the present study, a facile and simple fabrication method of a semiconductor based urea biosensor was reported via three steps: (i) producing a ZnO–PVA composite film by means of a polymer assisted electrodeposition of zinc oxide (ZnO) on the F-doped SnO{sub 2} conducting glass (FTO) using water soluble polyvinyl alcohol (PVA), (ii) obtaining a nanoporous ZnO film by PVA omission via a subsequent post-treatment by annealing of the ZnO–PVA film, and (iii) preparation of a FTO/ZnO/Urs biosensor by exploiting a nanoporous ZnO film as an efficient and excellent platform area for electrostatic immobilization of urease enzyme (Urs) which was forced by the difference in their isoelectric point (IEP). The characterization techniques focused on the analysis of the ZnO–PVA film surfaces before and after annealing, which had a prominent effect on the porosity of the prepared ZnO film. The surface characterization of the nanostructured ZnO film by a field emission-scanning electron microscopy (FE–SEM), exhibited a film surface area as an effective bio-sensing matrix for enzyme immobilization. The structural characterization and monitoring of the biosensor fabrication was performed using UV–Vis, Fourier Transform Infrared (FT-IR), Raman Spectroscopy, Thermogravimetric Analysis (TGA), Cyclic Voltammetry (CV), and Electrochemical Impedance Spectroscopy (EIS) techniques. The impedimetric results of the FTO/ZnO/Urs biosensor showed a high sensitivity for urea detection within 8.0–110.0 mg dL{sup −1} with the limit of detection as 5.0 mg dL{sup −1}. - Highlights: • Novel disposable impedimetric urea biosensor fabrication based on ZnO–nanoporous transducer • Exploiting omissible PVA polymer as a simple strategy for ZnO–nanoporous film preparation • ZnO–nanoporous film as a good pore framework with large surface area/volume for enzyme immobilization • Application of impedimetric measurement for urea monitoring due to its rapidity, sensitivity, and

  7. Design and fabrication of a MEMS Lamb wave device based on ZnO thin film*

    Institute of Scientific and Technical Information of China (English)

    Liu Mengwei; Li Junhong; Ma Jun; Wang Chenghao

    2011-01-01

    This paper presents the design and fabrication of a Lamb wave device based on ZnO piezoelectric film.The Lamb waves were respectively launched and received by both Al interdigital transducers. In order to reduce the stress of the thin membrane, the ZnO/A1/LTO/Si3N4/Si multilayered thin plate was designed and fabricated. A novel method to obtain the piezoelectric constant of the ZnO film was used. The experimental results for characterizing the wave propagation modes and their frequencies of the Lamb wave device indicated that the measured center frequency of antisymmetric A0 and symmetric S0 modes Lamb wave agree with the theoretical predictions. The mass sensitivity of the MEMS Lamb wave device was also characterized for gravimetric sensing application.

  8. Design and fabrication of a MEMS Lamb wave device based on ZnO thin film

    Energy Technology Data Exchange (ETDEWEB)

    Liu Mengwei; Li Junhong; Ma Jun; Wang Chenghao, E-mail: liumw@mail.ioa.ac.cn [Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190 (China)

    2011-04-15

    This paper presents the design and fabrication of a Lamb wave device based on ZnO piezoelectric film. The Lamb waves were respectively launched and received by both Al interdigital transducers. In order to reduce the stress of the thin membrane, the ZnO/Al/LTO/Si{sub 3}N{sub 4}/Si multilayered thin plate was designed and fabricated. A novel method to obtain the piezoelectric constant of the ZnO film was used. The experimental results for characterizing the wave propagation modes and their frequencies of the Lamb wave device indicated that the measured center frequency of antisymmetric A{sub 0} and symmetric S{sub 0} modes Lamb wave agree with the theoretical predictions. The mass sensitivity of the MEMS Lamb wave device was also characterized for gravimetric sensing application. (semiconductor devices)

  9. ZnO Film Photocatalysts

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    Bosi Yin

    2014-01-01

    Full Text Available We have synthesized high-quality, nanoscale ultrathin ZnO films at relatively low temperature using a facile and effective hydrothermal approach. ZnO films were characterized by scanning electron microscope (SEM, X-ray diffraction (XRD, Raman spectroscopy, photoluminescence spectra (PL, and UV-vis absorption spectroscopy. The products demonstrated 95% photodegradation efficiency with Congo red (CR after 40 min irradiation. The photocatalytic degradation experiments of methyl orange (MO and eosin red also were carried out. The results indicate that the as-obtained ZnO films might be promising candidates as the excellent photocatalysts for elimination of waste water.

  10. Antibacterial and physical properties of poly(vinyl chloride)-based film coated with ZnO nanoparticles.

    Science.gov (United States)

    Li, X H; Xing, Y G; Li, W L; Jiang, Y H; Ding, Y L

    2010-06-01

    Nanoparticles of ZnO and their application in coating systems have attracted a great deal of attention in recent years because of its multifunction property, especially antibacterial activity. In this study, antibacterial and physical properties of poly(vinyl chloride) (PVC) based film coated with ZnO nanoparticles were investigated. It was found that the antibacterial action should be attributed to the killing effect property of ZnO nanoparticles. The ZnO-coated films treated by shaking for 10 h exhibited a similar high antibacterial activity against Escherichia coli and Staphylococcus aureus as the untreated ZnO-coated films. This result indicated that the ZnO nanoparticles adhered very well to the plastic film. The antibacterial activity of the ZnO-coated film to inactivate E. coli or S. aureus was improved by UV irradiation. The analysis of physical properties of the ZnO-coated films revealed that the nano-ZnO particles showed less effects on the tensile strength and elongation at break of the film. The ultraviolet (UV) light fastness of the ZnO-coated PVC film was improved, which may be attributed to the absorption of ZnO nanoparticles against UV light. Water vapor transmission of the ZnO-coated film decreased from 128 to 85 g/m(2) · 24 h, whereas the thickness of film increased from 6.0 μm with increasing the amount of nano-ZnO particles coated from 0 to 187.5 μg/cm(2). This research revealed that the PVC film coated with nano-ZnO particles has a good potential to be used as an active coating system for food packaging.

  11. Organic photovoltaic cells based on ZnO thin film electrodes.

    Science.gov (United States)

    Ghica, C; Ion, L; Epurescu, G; Nistor, L; Antohe, S; Dinescu, M

    2010-02-01

    Due to its wide band-gap (ca. 3.4 eV), ZnO is a possible candidate material to be used as transparent electrode for a new class of photovoltaic (PV) cells. Also, an increased interest for the photovoltaic properties of several organic monomers and polymers (merocyanines, phthalocyanines and porphyrins) was noticed, because of their high optical absorption in the visible region of the spectrum allowing them to be used as potential inexpensive materials for solar cells. Preparation and properties of CuPc (copper phthalocyanine) based photovoltaic cells using ZnO thin films as transparent conductor electrodes are presented in this paper. ZnO layers are grown by pulsed laser deposition, while the organic layers are obtained by thermal evaporation. Structural characterization is performed by electron microscopy. Optical and transport properties of the mutilayered structures are obtained by electrical and spectro-photometric measurements. The influence of the ZnO-polymer interface on the external quantum efficiency (EQE) of the photovoltaic cell is clearly evidenced by our measurements.

  12. Development of Antibacterial Composite Films Based on Isotactic Polypropylene and Coated ZnO Particles for Active Food Packaging

    Directory of Open Access Journals (Sweden)

    Clara Silvestre

    2016-01-01

    Full Text Available This study was aimed at developing new films based on isotactic polypropylene (iPP for food packaging applications using zinc oxide (ZnO with submicron dimension particles obtained by spray pyrolysis. To improve compatibility with iPP, the ZnO particles were coated with stearic acid (ZnOc. Composites based on iPP with 2 wt % and 5 wt % of ZnOc were prepared in a twin-screw extruder and then filmed by a calender. The effect of ZnOc on the properties of iPP were assessed and compared with those obtained in previous study on iPP/ZnO and iPP/iPPgMA/ZnO. For all composites, a homogeneous distribution and dispersion of ZnOc was obtained indicating that the coating with stearic acid of the ZnO particles reduces the surface polarity mismatch between iPP and ZnO. The iPP/ZnOc composite films have relevant zinc oxide with respect to E. coli, higher thermal stability and improved mechanical and impact properties than the pure polymer and the composites iPP/ZnO and iPP/iPPgMA/ZnO. This study demonstrated that iPP/ZnOc films are suitable materials for potential application in the active packaging field.

  13. Modeling of Thin Film Solar Photovoltaic Based on Zno/Sns Oxide-Absorber Substrate Configuration

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    Anupam Verma

    2014-06-01

    Full Text Available Due to increasing awareness for using clean energy and therefore greater demand for relying more on the renewable sources which solar photovoltaic are part of because they pose very little or no threat to the environment comparatively, there is growing pressure for reducing electricity generation costs from solar photovoltaic (PV modules. Hence there is need for alternative new light absorbing materials that can provide conversion efficiencies which would be comparable to the current technologies based on crystalline silicon and CdTe or CIGS thin films at lower manufacturing costs and therefore providing cost effective solutions. In this paper we have evaluated the tin based absorber material (based on tin monosulfide; SnS as the next generation of Photovoltaic cells that can provide the desired performance in the long term. Therefore it explores the potential use of tin mono-sulfide as photovoltaic material for conversion of light into electricity. Zinc Oxide (ZnO thin films have been recognized as good candidates in photovoltaic devices acting as wide-band gap window layer. The results are presented through the numerical analysis done by AMPD-1D simulator tool to explore the possibility of using thin film and stable ZnO/SnS solar photovoltaic device with aim to achieve comparable conversion efficiencies.

  14. Performance Evaluation of ZnO based Rare Earth Element Doped Thin Films

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    Manish Sharma

    2013-10-01

    Full Text Available In DMS materials, a small fraction of a host semiconductor cation is substituted by magnetic ions. We chose as semiconducting host the transparent ZnO, with a bandgap of 3.3 eV at room temperature. Studies on ZnO doped with 3d transition metals indicated only small magnetic moments. The more recent results for Gd in GaN, indicating high magnetic moments, motivated us to investigate ZnO thin films doped with rare earth (RE metal ions. For the 3d transition metals, the 3d electrons are exterior and delocalized; leading to strong direct exchange interactions and high Curie temperatures, but often the orbital momentum is zero, leading to small total magnetic moments per atom. In RE metals, the 4f electrons are localized, exchange interactions are indirect, via 5d or 6s conduction electrons, but the high orbital momentum is leading to high total magnetic moments per atom, like 3.27μB for Nd. The Curie point for Nd is 19 K. In this paper we present the results of our study on ZnO films doped with Nd. Hall measurements are performed to investigate the electrical properties of films. Here we prepared and investigated ZnO films doped with different concentration of Nd. The films are grown on a-plane Al2O3 or SiO2 substrates. Hall investigations of electrical properties revealed the presence of a degenerate, highly conducting, film–substrate interface layer for the films grown on Al2O3; such an effect can be avoided, for example, by using SiO2 substrates. Magnetotransport measurements indicated no anomalous Hall effect, but a pronounced negative magneto resistance ratio that can be interpreted as a paramagnetic response of the system to the applied magnetic field. We would like to proceed with the surface sensitive techniques for investigating magnetic properties of ZnO:RE thin films.

  15. Development and surface characterization of a glucose biosensor based on a nanocolumnar ZnO film

    Science.gov (United States)

    Rodrigues, A.; Castegnaro, M. V.; Arguello, J.; Alves, M. C. M.; Morais, J.

    2017-04-01

    Highly oriented nanostructured ZnO films were grown on the surface of stainless steel plates (ZnO/SS) by chemical bath deposition (CBD). The films consisted of vertically aligned ZnO nanocolumns, ∼1 μm long and ∼80 nm wide, as observed by SEM (scanning electron microscopy) and FIB (focused ion beam). XRD (X-ray diffraction) confirmed the c-axis preferred orientation of the ZnO columns, which were functionalized with the glucose oxidase (GOx) enzyme into a biosensor of glucose. The electrochemical response studied by CV (cyclic voltammetry) proved that the biosensor was capable of detecting glucose from 1.5 up to 16 mM concentration range. XPS (X-ray photoelectron spectroscopy) analysis, excited with synchrotron radiation, probed the atom specific chemical environment at the electrode's surface and shed some light on the nature of the ZnO-GOx interaction.

  16. UV photodetectors based on 3D periodic Au-decorated nanocone ZnO films

    Science.gov (United States)

    Fan, Haowen; Sun, Mengwei; Ma, Pengsha; Yin, Min; Lu, Linfeng; Xue, Xinzhong; Zhu, Xufei; Li, Dongdong; Ma, Jing

    2016-09-01

    Thermal nanoimprinting technology was employed to fabricate 3D periodic nanocone ZnO films with different height/pitch values for photodetectors to optimize their light capturing property. The photocurrents of patterned film photodetectors increase with the height/pitch values. The patterned ZnO-Au hybrid film further boosts the ultraviolet (UV) response. Due to the co-contribution of the light trapping of 3D periodic structures and the driving force of the Schottky barrier in the Au/ZnO interface, the patterned ZnO-Au hybrid films with height/pitch of 40 nm/866 nm exhibit the best UV photoresponse (I on/I off = 779.927), which is 3.8 times higher than its film counterpart (I on/I off = 164.1).

  17. Green emission in carbon doped ZnO films

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    L. T. Tseng

    2014-06-01

    Full Text Available The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR and low temperature photoluminescence (PL measurement.

  18. Green emission in carbon doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, L. T.; Yi, J. B., E-mail: jiabao.yi@unsw.edu.au; Zhang, X. Y.; Xing, G. Z.; Luo, X.; Li, S. [School of Materials Science and Engineering, University of New South Wales, Kensington, NSW, 2052 (Australia); Fan, H. M. [School of Chemical Engineering, Northwest University, Xi' an 710069 (China); Herng, T. S.; Ding, J. [Department of Materials Science and Engineering, National University of Singapore, 119260 (Singapore); Ionescu, M. [Australian Nuclear Science and Technology Organization, (ANSTO), New Illawarra Road, Lucas Heights, NSW 2234 (Australia)

    2014-06-15

    The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.

  19. Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications

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    Fábio F. Vidor

    2016-08-01

    Full Text Available Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high-k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the ION/IOFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V/V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates.

  20. Nanostructured ZnO Films for Room Temperature Ammonia Sensing

    Science.gov (United States)

    Dhivya Ponnusamy; Sridharan Madanagurusamy

    2014-09-01

    Zinc oxide (ZnO) thin films have been deposited by a reactive dc magnetron sputtering technique onto a thoroughly cleaned glass substrate at room temperature. X-ray diffraction revealed that the deposited film was polycrystalline in nature. The field emission scanning electron micrograph (FE-SEM) showed the uniform formation of a rugby ball-shaped ZnO nanostructure. Energy dispersive x-ray analysis (EDX) confirmed that the film was stoichiometric and the direct band gap of the film, determined using UV-Vis spectroscopy, was 3.29 eV. The ZnO nanostructured film exhibited better sensing towards ammonia (NH3) at room temperature (˜30°C). The fabricated ZnO film based sensor was capable of detecting NH3 at as low as 5 ppm, and its parameters, such as response, selectivity, stability, and response/recovery time, were also investigated.

  1. Enzymatic glucose sensor based on Au nanoparticle and plant-like ZnO film modified electrode

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Kun [Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Alex, Saji [Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Chemistry, Government College for Women, Thiruvananthapuram, Kerala 695014 (India); Siegel, Gene [Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Tiwari, Ashutosh, E-mail: tiwari@eng.utah.edu [Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

    2015-01-01

    A novel electrochemical glucose sensor was developed by employing a composite film of plant-like Zinc oxide (ZnO) and chitosan stabilized spherical gold nanoparticles (AuNPs) on which Glucose oxidaze (GOx) was immobilized. The ZnO was deposited on an indium tin oxide (ITO) coated glass and the AuNPs of average diameter of 23 nm were loaded on ZnO as the second layer. The prepared ITO/ZnO/AuNPs/GOx bioelectrode exhibited a low value of Michaelis–Menten constant of 1.70 mM indicating a good bio-matrix for GOx. The studies of electrochemical properties of the electrode using cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) showed that, the presence of AuNPs provides significant enhancement of the electron transfer rate during redox reactions. The linear sweep voltammetry (LSV) shows that the ITO/ZnO/AuNPs/GOx based sensor has a high sensitivity of 3.12 μA·mM{sup −1}·cm{sup −2} in the range of 50 mg/dL to 400 mg/dL glucose concentration. The results show promising application of the gold nanoparticle modified plant-like ZnO composite bioelectrode for electrochemical sensing of glucose.

  2. Effect of initialization time on application potentiality of a ZnO thin film based LPG sensor

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    Parta Mitra

    2009-09-01

    Full Text Available A prototype electronic LPG (Liquid Petroleum Gas sensor based on zinc oxide (ZnO film has been fabricated. The objective of the present work was to investigate the importance of initialization time (also called warm-up time on the application potentiality of the ZnO based alarm. The role of sensor geometry on initialization time is presented. The electronic circuitry of the prototype LPG device alarm is discussed. It is shown that that the initialization time depends on the switch off time (or the time for which the sensor was kept idle. The resistive mode sensors can be fixed at 40% LEL (Lower Explosive Limit of LPG for safe operation.

  3. Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films

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    Shuhan Jing

    2015-04-01

    Full Text Available The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.

  4. An economic approach to fabricate photo sensor based on nanostructured ZnO thin films

    Science.gov (United States)

    Huse, Nanasaheb; Upadhye, Deepak; Sharma, Ramphal

    2016-05-01

    Nanostructural ZnO Thin Films have been synthesized by simple and economic Chemical Bath Deposition technique onto glass substrate with bath temperature at 60°C for 1 hour. Structural, Optical, Electrical and topographical properties of the prepared Thin Films were investigated by GIXRD, I-V Measurement System, UV-Visible Spectrophotometer and AFM respectively. Calculated lattice parameters are in good agreement with the standard JCPDS card (36-1451) values, exhibits Hexagonal Wurtzite crystal structure. I-V Measurement curve has shown ohmic nature in dark condition and responds to light illumination which reveals Photo sensor properties. After illumination of 60W light, decrease in resistance was observed from 110.9 KΩ to 104.4 KΩ. The change in current and calculated Photo sensitivity was found to be 3.51 µA and 6.3% respectively. Optical band gap was found to be 3.24 eV. AFM images revealed uniform deposition over entire glass substrate with 32.27 nm average roughness of the film.

  5. A general deposition method for ZnO porous films: Occlusion electrosynthesis

    Energy Technology Data Exchange (ETDEWEB)

    Chen Haining, E-mail: chen-hn77@163.com [Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Li Weiping; Hou Qin; Liu Huicong [Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Zhu Liqun, E-mail: Zhulq@buaa.edu.cn [Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering, Beihang University, Beijing 100191 (China)

    2011-10-30

    In this paper, a modified electrodeposition method, occlusion electrosynthesis (OE), was used to prepare ZnO porous films. The processes of OE were similar to those of electrodeposition except the addition of ZnO nanoparticles in electrolyte. The ZnO porous film prepared by OE (OE-ZnO) was highly porous with considerable thickness (55 {mu}m). The quantum dots-sensitized solar cell based on OE-ZnO porous film showed superior photoelectrochemical performance to that based on the ZnO porous film prepared by doctor-blade (DB) method at the suitable concentrations of ZnO nanoparticles in electrolyte, about 16-32 g/L. In addition to the ZnO porous film constructed with ZnO nanoparticles, the ZnO porous film constructed with ZnO nanorods, ZnO/multi-walls carbon nanotubes and ZnO/TiO{sub 2} composite porous films have also been successfully synthesized by OE, which were expected to be widely applied in various fields. The low temperature (60 deg. C) processes without post treatment made OE more promising for preparing ZnO porous films than DB, especially the ZnO porous films for flexible devices.

  6. EPD-deposited ZnO thin films: a review

    Energy Technology Data Exchange (ETDEWEB)

    Verde, M.

    2014-07-01

    ZnO-based materials and specifically ZnO films with tailored morphology have been subjected to extensive research in the past few years due to their high potential for multiple prospective applications, mainly in electronics. Electrophoretic Deposition (EPD) constitutes an economical, eco friendly, low energy consuming and easily scalable alternative to the high energy consuming evaporative techniques which are commonly used for the obtaining of these ZnO films. For its application, however, the use of stable, well dispersed suspensions is a necessary requirement, and thus a thorough study of their colloidal chemistry is essential. In this work the main contributions to the study of colloidal chemistry of ZnO nanoparticle suspensions and their shaping into ZnO films by EPD are summarized. (Author)

  7. Broadband light trapping based on periodically textured ZnO thin films

    Science.gov (United States)

    Liu, Bofei; Liang, Xuejiao; Liang, Junhui; Bai, Lisha; Gao, Haibo; Chen, Ze; Zhao, Ying; Zhang, Xiaodan

    2015-05-01

    Transparent conductive front electrodes (TCFEs) deployed in photovoltaic devices have been extensively studied for their significance in transporting carriers, coupling and trapping the incident photons in high-performing solar cells. The trade-off between the light-transmission, electrical, and scattering properties for TCFEs to achieve a broadband improvement in light absorption in solar cells while maintaining a high electrical performance has become the key issue to be tackled. In this paper, we employ self-assembled polystyrene (PS) spheres based on a sauna-like method as a template, followed by a double-layer deposition and then successfully fabricate highly-transparent, well-conductive, and large-scale periodically-textured ZnO TCFEs with broadband light trapping properties. A sheet resistance below 15 Ω sq-1 was achieved for the periodically-textured ZnO TCFEs, with a concomitant average transmission of 81% (including the glass substrate) in the 400-1100 nm spectral range, a haze improvement in a broadband spectral range, and a wider scattering angular domain. The proposed approach affords a promising alternative method to prepare periodically-textured TCFEs, which are essential for many optoelectronic device semiconductors, such as photovoltaic and display applications.Transparent conductive front electrodes (TCFEs) deployed in photovoltaic devices have been extensively studied for their significance in transporting carriers, coupling and trapping the incident photons in high-performing solar cells. The trade-off between the light-transmission, electrical, and scattering properties for TCFEs to achieve a broadband improvement in light absorption in solar cells while maintaining a high electrical performance has become the key issue to be tackled. In this paper, we employ self-assembled polystyrene (PS) spheres based on a sauna-like method as a template, followed by a double-layer deposition and then successfully fabricate highly-transparent, well

  8. Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

    Science.gov (United States)

    Cho, Sung Woon; Yun, Myeong Gu; Ahn, Cheol Hyoun; Kim, So Hee; Cho, Hyung Koun

    2015-03-01

    Zinc oxide (ZnO)-based bi-layers, consisting of ZnO and Al-doped ZnO (AZO) layers grown by atomic layer deposition, were utilized as the channels of oxide thin-film transistors (TFTs). Thin AZO layers (5 nm) with different Al compositions (5 and 14 at. %) were deposited on top of and beneath the ZnO layers in a bi-layer channel structure. All of the bi-layer channel TFTs that included the AZO layers showed enhanced stability (Δ V Th ≤ 3.2 V) under a positive bias stress compared to the ZnO single-layer channel TFT (Δ V Th = 4.0 V). However, the AZO/ZnO bi-layer channel TFTs with an AZO interlayer between the gate dielectric and the ZnO showed a degraded field effect mobility (0.3 cm2/V·s for 5 at. % and 1.8 cm2/V·s for 14 at. %) compared to the ZnO single-layer channel TFT (5.5 cm2/V·s) due to increased scattering caused by Al-related impurities near the gate dielectric/channel interface. In contrast, the ZnO/AZO bi-layer channel TFTs with an AZO layer on top of the ZnO layer exhibited an improved field effect mobility (7.8 cm2/V·s for 14 at. %) and better stability. [Figure not available: see fulltext.

  9. Nanostructured ZnO films on stainless steel are highly safe and effective for antimicrobial applications.

    Science.gov (United States)

    Shim, Kyudae; Abdellatif, Mohamed; Choi, Eunsoo; Kim, Dongkyun

    2017-04-01

    The safety and effectiveness of antimicrobial ZnO films must be established for general applications. In this study, the antimicrobial activity, skin irritation, elution behavior, and mechanical properties of nanostructured ZnO films on stainless steel were evaluated. ZnO nanoparticle (NP) and ZnO nanowall (NW) structures were prepared with different surface roughnesses, wettability, and concentrations using an RF magnetron sputtering system. The thicknesses of ZnO NP and ZnO NW were approximately 300 and 620 nm, respectively, and ZnO NW had two diffraction directions of [0002] and [01-10] based on high-resolution transmission electron microscopy. The ZnO NW structure demonstrated 99.9% antimicrobial inhibition against Escherichia coli, Staphylococcus aureus, and Penicillium funiculosum, and no skin irritation was detected using experimental rabbits. Approximately 27.2 ± 3.0 μg L(-1) Zn ions were eluted from the ZnO NW film at 100 °C for 24 h, which satisfies the WHO guidelines for drinking water quality. Furthermore, the Vickers hardness and fracture toughness of ZnO NW films on stainless steel were enhanced by 11 and 14% compared to those of the parent stainless steel. Based on these results, ZnO NW films on STS316L sheets are useful for household supplies, such as water pipes, faucets, and stainless steel containers.

  10. A novel fiber-optic temperature sensor based on high temperature-dependent optical properties of ZnO film on sapphire fiber-ending

    Energy Technology Data Exchange (ETDEWEB)

    Cai Pinggen; Zhen Dong; Xu Xiaojun; Liu Yulin [Department of Applied Physics, Zhejiang University of Technology, 18 Chaowang Road, Hangzhou 310014, Zhejiang Province (China); Chen Naibo [Department of Science, Zhijiang College of Zhejiang University of Technology, Hangzhou 310024 (China); Wei Gaorao [Department of Applied Physics, Zhejiang University of Technology, 18 Chaowang Road, Hangzhou 310014, Zhejiang Province (China); Sui Chenghua, E-mail: suich@zjut.edu.cn [Department of Applied Physics, Zhejiang University of Technology, 18 Chaowang Road, Hangzhou 310014, Zhejiang Province (China)

    2010-07-25

    We report the growth of high-quality thin films of ZnO via an electron-beam evaporation technique. Studies of the transmittance spectra have revealed a sharp optical absorption edge and a significant redshift. After annealing at 673 K, the ZnO films again demonstrated a sharp absorption edge in a manner similar to the as-deposited samples. This illustrates the excellent thermal stability of the thin films and, as such, demonstrates their potential as fiber-optic temperature sensors. Utilizing the influence of optical absorption spectra at different temperatures, a novel fiber-optic temperature sensor based on this material has been designed and tested. This technique could offer a simple, robust and cost-effective method to be used in high temperature sensing applications.

  11. Induced growth of high quality ZnO thin films by crystallized amorphous ZnO

    Institute of Scientific and Technical Information of China (English)

    Wang Zhi-Jun; Song Li-Jun; Li Shou-Chun; Lu You-Ming; Tian Yun-Xia; Liu Jia-Yi; Wang Lian-Yuan

    2006-01-01

    This paper reports the induced growth of high quality ZnO thin film by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by solid-state pyrolytic reaction, then by taking crystallized amorphous ZnO as seeds (buffer layer), ZnO thin films have been grown in diethyene glycol solution of zinc acetate at 80℃. X-ray Diffraction curve indicates that the films were preferentially oriented [001] out-of-plane direction of the ZnO. Atomic force microscopy and scanning electron microscopy were used to evaluate the surface morphology of the ZnO thin film. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. The results indicate that high quality ZnO thin film was obtained.

  12. Nanostructured hybrid ZnO thin films for energy conversion

    Directory of Open Access Journals (Sweden)

    Samantilleke Anura

    2011-01-01

    Full Text Available Abstract We report on hybrid films based on ZnO/organic dye prepared by electrodeposition using tetrasulfonated copper phthalocyanines (TS-CuPc and Eosin-Y (EoY. Both the morphology and porosity of hybrid ZnO films are highly dependent on the type of dyes used in the synthesis. High photosensitivity was observed for ZnO/EoY films, while a very weak photoresponse was obtained for ZnO/TS-CuPc films. Despite a higher absorption coefficient of TS-CuPc than EoY, in ZnO/EoY hybrid films, the excited photoelectrons between the EoY levels can be extracted through ZnO, and the porosity of ZnO/EoY can also be controlled.

  13. Glucose biosensor based on functionalized ZnO nanowire/graphite films dispersed on a Pt electrode

    Science.gov (United States)

    Gallay, P.; Tosi, E.; Madrid, R.; Tirado, M.; Comedi, D.

    2016-10-01

    We present a glucose biosensor based on ZnO nanowire self-sustained films grown on compacted graphite flakes by the vapor transport method. Nanowire/graphite films were fragmented in water, filtered to form a colloidal suspension, subsequently functionalized with glucose oxidase and finally transferred to a metal electrode (Pt). The obtained devices were evaluated using scanning electron microscopy, energy-dispersive x-ray spectroscopy, cyclic voltammetry and chronoamperometry. The electrochemical responses of the devices were determined in buffer solutions with successive glucose aggregates using a tripolar electrode system. The nanostructured biosensors showed excellent analytical performance, with linear response to glucose concentrations, high sensitivity of up to ≈17 μA cm-2 mM-1 in the 0.03-1.52 mM glucose concentration range, relatively low Michaelis-Menten constant, excellent reproducibility and a fast response. The detection limits are more than an order of magnitude lower than those achievable in commercial biosensors for glucose control, which is promising for the development of glucose monitoring methods that do not require blood extraction from potentially diabetic patients. The strong detection enhancements provided by the functionalized nanostructures are much larger than the electrode surface-area increase and are discussed in terms of the physical and chemical mechanisms involved in the detection and transduction processes.

  14. ZnO Thin Film Electronics for More than Displays

    Science.gov (United States)

    Ramirez, Jose Israel

    Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

  15. Microstructural characterization, optical and photocatalytic properties of bilayered CuO and ZnO based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Pizá-Ruiz, P.; Solís-Canto, O.; Ornelas-Gutiérrez, C.; Pérez-García, S.; Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx

    2014-12-05

    Highlights: • High quality bilayered Zn–Cu oxide thin films were deposited by aerosol assisted CVD. • Detailed microstructural characterization was performed by XRD and electron microscopy. • Absorbance of bilayered films shows a shift of absorption edge toward visible region. • Optical band gap or nearly 3.2 and 2 eV was determined for ZnO and Cu oxide. • High photocatalytic activity around 90% was obtained for bilayered samples. - Abstract: In this work, it is presented the synthesis, microstructural characterization and photocatalytic properties of bilayered CuO–ZnO/ZnO thin films onto borosilicate glass and fused silica substrates. The films were deposited by aerosol assisted chemical vapor deposition, using an experimental setup reported elsewhere. Deposition conditions were optimized to get high quality films; i.e. they were structurally uniform, highly transparent, non-light scattering, homogeneous, and well adhered to the substrate. Different Cu/Zn atomic ratios were tried for the upper layer. The microstructure of the films was characterized by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy. GIXRD results indicate the presence of ZnO Wurzite and Cu oxide phases. Results of SEM and HRTEM analysis of the cross sectional microstructure showed that the films were composed of compact and dense layers with no visible evidence of an interfacial boundary or porosity. Optical absorbance of the bilayered films showed a clear shift of the absorption toward the visible range. Optical band gap was determined roughly at 3.2 and 2 eV for ZnO and Cu oxide, respectively. Photocatalytic activity of the samples, for the degradation of a 10{sup −5} mol dm{sup −3} solution of methylene blue (MB), was determined after 120 and 240 min of irradiation with an UV-A source. Around 90% of MB degradation was reached by bilayered films with

  16. Influence of nitrogen and magnesium doping on the properties of ZnO films

    Institute of Scientific and Technical Information of China (English)

    李东华; 陈晓航; 詹华瀚; 周颖慧; 康俊勇; 王惠琼; 周华; 李亚平; 黄政; 郑金成; 王嘉鸥; 钱海杰; 奎热西

    2016-01-01

    Undoped ZnO and doped ZnO films were deposited on the MgO(111) substrates using oxygen plasma-assisted molec-ular beam expitaxy. The orientations of the grown ZnO thin film were investigated by in situ refl ection high-energy electron diffraction and ex situ x-ray diffraction (XRD). The film roughness was measured by atomic force microscopy, which was correlated with the grain sizes determined by XRD. Synchrotron-based x-ray absorption spectroscopy was performed to study the doping effect on the electronic properties of the ZnO films, compared with density functional theory calculations. It is found that, nitrogen doping would hinder the growth of thin film, and generate the NO defect, while magnesium doping promotes the quality of nitrogen-doped ZnO films, inhibiting (N2)O production and increasing nitrogen content.

  17. Nitrogen oxides and ammonia sensing characteristics of SILAR deposited ZnO thin film

    Science.gov (United States)

    Lupan, O. I.; Shishiyanu, S. T.; Shishiyanu, T. S.

    2007-07-01

    Pure and Sn, Ni doped ZnO thin films were deposited on glass substrates using a novel successive ionic layer adsorption and reaction (SILAR) method at room temperature. Microstructures of the deposited films were optimized by adjusting growth parameters. The variation in resistivity of the ZnO film sensors was performed with rapid photothermal processing (RPP). The effect of rapid photothermal processing was found to have an important role in ZnO based sensor sensitivity to NO 2, NH 3. While the undoped ZnO film surface exhibited higher NH 3 sensitivity than that of NO 2, an enhanced NO 2 sensitivity was noticed for the ZnO films doped with Sn and higher NH 3 sensitivity was obtained by Ni doping.

  18. The annealing induced extraordinary properties of SI based ZNO film grown by RF sputtering

    CERN Document Server

    Li, Jing; Wu, Suntao

    2007-01-01

    Pb(Zr0.52Ti0.48)O3 (PZT) thin films were in situ deposited by pulsed laser deposition (PLD) on Pt/Ti/SiO2/Si substrates using a template layer derived by sol-gel method. A 0.1-$\\mu$m-thick PZT layer with (111) or (100)-preferred orientation was first deposited onto Pt/Ti/SiO2/Si substrates using the sol-gel method, and than a PZT layer with thickness of 1$\\mu$m was in situ deposited by PLD on the above-mentioned PZT layer. The crystalline phases and the preferred orientations of the PZT films were investigated by X-ray diffraction analysis. Surface and cross-sectional morphologies were observed by scanning electron microscopy and transmission electron microscopy. The electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The preferred orientation of the films can be controlled using the template layer derived by the sol-gel method. The deposition temperature required to obtain the perovskite phase in this process is approximately 460 degrees C, and ...

  19. Self-standing particle-binding ZnO film.

    Science.gov (United States)

    Masuda, Yoshitake; Kato, Kazumi

    2009-01-01

    Self-standing particle-binding ZnO film was fabricated by combination of crystallization in aqueous solution and annealing on FTO (SnO2:F) coated glass substrate. Multi-needle ZnO particles crystallized in a solution of zinc nitrate hexahydrate and ethylenediamine at 60 degrees C. Crystalline particles having an ultrafine surface relief structure were gradually deposited on the substrate to form thick particulate film. The film was then annealed at 950 degrees C for 1 h in air. The ZnO particles formed necks to connect to each other. The glass substrate deformed into a dome shape generating stress between the ZnO film and substrate; on the other hand, FTO layers retained their uneven surface during annealing. ZnO particulate film was successfully peeled off from the substrate as self-standing film. Deformation of glass substrate and FTO joint-insulating layer supported peeling-off of the film. The connected ZnO particles formed continuous white porous film having many spaces and continuous open pores surrounded by multi-needle ZnO particles. The film can be used as self-standing film and be pasted on substrate such as polymer film, metal or paper for application to flexible lightweight devices.

  20. Influence of Dopants in ZnO Films on Defects

    Institute of Scientific and Technical Information of China (English)

    PENG Cheng-Xiao; WENG Hui-Min; ZHANG Yang; MA Xing-Ping; YE Bang-Jiao

    2008-01-01

    @@ The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique.The results show S that parameters meet SAl Sun SAg for Al-doped ZnO films, undoped and Ag-doped ZnO films.Zinc vacancies are found in all ZnO films with different dopants.According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film.When AI atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films.The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.

  1. Liquid crystal alignment on ZnO nanostructure films

    Science.gov (United States)

    Chung, Yueh-Feng; Chen, Mu-Zhe; Yang, Sheng-Hsiung; Jeng, Shie-Chang

    2016-03-01

    The study of liquid crystal (LC) alignment is important for fundamental researches and industrial applications. The tunable pretilt angles of liquid crystal (LC) molecules aligned on the inorganic zinc oxide (ZnO) nanostructure films with controllable surface wettability are demonstrated in this work. The ZnO nanostructure films are deposited on the ITO- glass substrates by the two-steps hydrothermal process, and their wettability can be modified by annealing. Our experimental results show that the pretilt angles of LCs on ZnO nanostructure films can be successfully adjusted over a wide range from ~90° to ~0° as the surface energy on the ZnO nanostructure films changes from ~30 to ~70 mJ/m. Finally we have applied this technique to fabricate a no-bias optically-compensated bend (OCB) LCD with ZnO nanostructure films annealed at 235 °C.

  2. Morphological and optical investigation of Sol-Gel ZnO films

    Science.gov (United States)

    Ivanova, T.; Harizanova, A.; Petrova, A.

    2016-03-01

    This paper presents morphological and optical studies of the properties of spin-coated ZnO films depending on the annealing temperatures. The films microstructure was explored using a scanning nano-hardness measuring device of the NanoScan family, based on the principles of atomic force microscopy, in a constant frequency mode. The surface study revealed that the root-mean-square (RMS) surface roughness of 985.64×985.64 nm ZnO films becomes greater with the increase of the annealing temperature, but the film surface remains uniform and smooth. The results were confirmed by XRD analysis, which demonstrated that the crystallite size grew from 25 to 36 nm with the thermal treatments. The ZnO films possessed high transmittance in the visible spectral range and the optical band gaps in ZnO films varied from 3.25 eV to 3.52 eV. The optical and morphological properties of the ZnO films formed on Si and quartz substrates are very good. The sol-gel approach proposed for deposition of nanostructured ZnO films is promising for applications in optoelectronic devices or solar cells.

  3. Significant room-temperature ferromagnetism in porous ZnO films: The role of oxygen vacancies

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Xue; Liu, Huiyuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Sun, Huiyuan, E-mail: huiyuansun@126.com [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Liu, Lihu; Jia, Xiaoxuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China)

    2015-10-15

    Graphical abstract: - Highlights: • Porous ZnO films were deposited on porous anodic alumina substrates. • Significant ferromagnetism (FM) has been observed in porous ZnO films (110 emu/cm{sup 3}). • The strong magnetic anisotropy was observed in the porous ZnO films. • The origin of FM is attributed to the oxygen vacancy with a local magnetic moment. - Abstract: Pure porous ZnO films were prepared by direct current reactive magnetron sputtering on porous anodic alumina substrates. Remarkably large room-temperature ferromagnetism was observed in the films. The highest saturation moment along the out-of-plane direction was about 110 emu/cm{sup 3}. Experimental and theoretical results suggested that the oxygen vacancies and the unique porous structure of the films are responsible for the large ferromagnetism. There are two modes of coupling between oxygen vacancies in the porous ZnO films: (i) exchange interactions directly between the oxygen vacancies and (ii) with the mediation of conduction electrons. In addition, it was found that the magnetic moment of ZnO films can be changed by tuning the concentration of oxygen vacancies. These observations may be useful in the development of ZnO-based spintronics devices.

  4. Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters.

    Science.gov (United States)

    Jeong, Yong Jin; An, Tae Kyu; Yun, Dong-Jin; Kim, Lae Ho; Park, Seonuk; Kim, Yebyeol; Nam, Sooji; Lee, Keun Hyung; Kim, Se Hyun; Jang, Jaeyoung; Park, Chan Eon

    2016-03-02

    Complementary inverters consisting of p-type organic and n-type metal oxide semiconductors have received considerable attention as key elements for realizing low-cost and large-area future electronics. Solution-processed ZnO thin-film transistors (TFTs) have great potential for use in hybrid complementary inverters as n-type load transistors because of the low cost of their fabrication process and natural abundance of active materials. The integration of a single ZnO TFT into an inverter requires the development of a simple patterning method as an alternative to conventional time-consuming and complicated photolithography techniques. In this study, we used a photocurable polymer precursor, zinc acrylate (or zinc diacrylate, ZDA), to conveniently fabricate photopatternable ZnO thin films for use as the active layers of n-type ZnO TFTs. UV-irradiated ZDA thin films became insoluble in developing solvent as the acrylate moiety photo-cross-linked; therefore, we were able to successfully photopattern solution-processed ZDA thin films using UV light. We studied the effects of addition of a tiny amount of indium dopant on the transistor characteristics of the photopatterned ZnO thin films and demonstrated low-voltage operation of the ZnO TFTs within ±3 V by utilizing Al2O3/TiO2 laminate thin films or ion-gels as gate dielectrics. By combining the ZnO TFTs with p-type pentacene TFTs, we successfully fabricated organic/inorganic hybrid complementary inverters using solution-processed and photopatterned ZnO TFTs.

  5. Growth of vertically aligned ZnO nanorods using textured ZnO films

    Directory of Open Access Journals (Sweden)

    Meléndrez Manuel

    2011-01-01

    Full Text Available Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100 substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.

  6. Investigation of the electrical and ethanol-vapour sensing properties of the junctions based on ZnO nanostructured thin film doped with copper

    Science.gov (United States)

    Dimitrov, Dimitre Tz.; Nikolaev, Nikolay K.; Papazova, Karolina I.; Krasteva, Lyudmila K.; Pronin, Igor A.; Averin, Igor A.; Bojinova, Assya S.; Georgieva, Angelina Ts.; Yakushova, Nadejda D.; Peshkova, Tatyana V.; Karmanov, Andrey A.; Kaneva, Nina V.; Moshnikov, Vyacheslav A.

    2017-01-01

    We present the investigation of ethanol sensing properties of the junctions composed by two plane-parallel nanostructured thin film electrodes. One of them consists of pure ZnO and the other one is composed of ZnO doped with Cu. The thickness of the lower layer was kept constant for all of the investigated structures. The thickness of the upper layer was varied. The samples were produced with different thickness of the top layer by changing the numbers of dip-coatings cycles. On produced junction structures we investigate the dependence of the potential difference on the temperature in the air flow and the changes that occur under exposure to flow of air with certain concentration of ethanol vapour. For ZnO/ZnO:Cu junction with top layer produced by two dip-coatings cycles, the potential difference under the air flow were getting more positive values up to 290 °C and then the values were decreasing, while for ZnO/ZnO:Cu junction with top layer produced by three dip-coatings cycles, the potential difference were getting more negative values with increasing the temperature. However in both cases the potential difference increases in value, when the structures are exposed to the vapour of ethanol. On this installation by the exchange the content of gas atmosphere at fixed temperature the ethanol concentration dependence of the potential difference of produced junction structures were evaluated. Both samples have shown nonlinear dependence of signal towards the concentration of ethanol vapour. The observed results for ZnO/ZnO:Cu were compared with those of the junctions composed by layers of ZnO doped with Ga and pure ZnO nanowires. The performed fractal analysis based on the SEM images showed a correlation between the fractal dimension of the surface of the upper layer of the samples and gas-sensitive properties of the sensing structures.

  7. Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

    Institute of Scientific and Technical Information of China (English)

    HE YongNing; ZHANG JingWen; YANG XiaoDong; XU QingAn; ZHU ChangChun; HOU Xun

    2007-01-01

    ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

  8. Physical model for the exotic ultraviolet photo-conductivity of ZnO nanowire films

    Science.gov (United States)

    Pan, Yue-Wu; Ren, Shou-Tian; Qu, Shi-Liang; Wang, Qiang

    2013-11-01

    Employing a simple and efficient method of electro-chemical anodization, ZnO nanowire films are fabricated on Zn foil, and an ultraviolet (UV) sensor prototype is formed for investigating the electronic transport through back-to-back double junctions. The UV (365 nm) responses of surface-contacted ZnO film are provided by I—V measurement, along with the current evolution process by on/off of UV illumination. In this paper, the back-to-back metal—seconductor—metal (M—S—M) model is used to explain the electronic transport of a ZnO nanowire film based structure. A thermionic-field electron emission mechanism is employed to fit and explain the as-observed UV sensitive electronic transport properties of ZnO film with surface-modulation by oxygen and water molecular coverage.

  9. Hybrid p-type ZnO film and n-type ZnO nanorod p-n homo-junction for efficient photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Hyun; Lee, Jun Seok; Lee, Sang Hyo; Nam, Hye Won [Novel Functional Materials and Device Lab, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Hong, Jin Pyo, E-mail: jphong@hanyang.ac.k [Novel Functional Materials and Device Lab, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Cha, Seoung Nam; Park, Young Jun; Kim, Jong Min [Samsung Advanced Institute of Technology, P.O. Box 11, 1 Suwon 440-600 (Korea, Republic of)

    2010-09-01

    Simple hybrid p-n homo-junctions using p-type ZnO thin films and n-type nanorods grown on fluorine tin oxide (FTO) substrates for photovoltaic applications are described. The ZnO nanorods (1.5 {mu}m) were synthesized via an aqueous solution method with zinc nitrate hexahydrate and hexamethylenetetramine on ZnO seed layers. The 10-nm-thick ZnO seed layers showed n-type conductivity on FTO substrates and were deposited with a sputtering-based method. After synthesizing ZnO nanorods, aluminum-nitride co-doped p-type ZnO films (200 nm) were efficiently grown using pre-activated nitrogen (N) plasma sources with an inductively-coupled dual-target co-sputtering system. The structural and electrical properties of hybrid p-n homo-junctions were investigated by scanning electron microscopy, transmittance spectrophotometry, and I-V measurements.

  10. Wound Healing Bionanocomposites Based on Castor Oil Polymeric Films Reinforced with Chitosan-Modified ZnO Nanoparticles.

    Science.gov (United States)

    Díez-Pascual, Ana M; Díez-Vicente, Angel L

    2015-09-14

    Castor oil (CO), which is a readily available, relatively inexpensive, and environmentally benign nonedible oil, has been successfully used as matrix material to prepare biocompatible and biodegradable nanocomposite films filled with chitosan (CS)-modified ZnO nanoparticles. The biocomposites were synthesized via a simple and versatile solution mixing and casting method. The morphology, structure, thermal stability, water absorption, biodegradability, cytocompatibility, barrier, mechanical, viscoelastic, antibacterial, and wound healing properties of the films have been analyzed. FT-IR spectra were used to obtain information about the nanoparticle-matrix interactions. The thermal stability, hydrophilicity, degree of porosity, water absorption, water vapor transmission rate (WVTR), oxygen permeability (Dk), and biodegradability of the films increased with the CS-ZnO loading. The WVTR and Dk data obtained are within the range of values reported for commercial wound dressings. Tensile tests demonstrated that the nanocomposites displayed a good balance between elasticity, strength, and flexibility under both dry and simulated body fluid (SBF) environments. The flexibility increased in a moist atmosphere due to the plasticization effect of absorbed water. The nanocomposites also exhibited significantly enhanced dynamic mechanical performance (storage modulus and glass transition temperature) than neat CO under different humidity conditions. The antibacterial activity of the films against Escherichia coli, Staphylococcus aureus, and Micrococcus luteus bacteria was investigated in the presence and the absence of UV light. The biocide effect increased progressively with the CS-ZnO content and was systematically stronger against Gram-positive cells. Composites with nanoparticle loading ≤5.0 wt % exhibited very good in vitro cytocompatibility and enabled a faster wound healing than neat CO and control gauze, hence showing great potential to be applied as antibacterial

  11. Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    ZnO,as a wide-band gap semiconductor,has recently become a new research fo-cus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy(L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition(PLD) . Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond(ns) pulsed laser abla-tion of ZnO ceramic target,the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

  12. Photo conductive UV detector based on high-resistance ZnO thin film%基于高阻ZnO薄膜的光电导型紫外探测器∗

    Institute of Scientific and Technical Information of China (English)

    祁晓萌; 彭文博; 赵小龙; 贺永宁

    2015-01-01

    As a wide bandgap semiconductor material, ZnO has huge potential in applications such as light emitting devices and sensors. Compared with GaN and SiC, ZnO has a bandgap of 3.37 eV and exciton binding energy of 60 meV at room temperature, indicating it is a promising candidate of UV detector. ZnO based metal-semiconductor-metal photoconductive ultraviolet detector has the advantages of high optical gain and strong responsivity. However, due to the photoconductive relaxation and surface effect of the ZnO material, a ZnO-based photoconductive UV detector has a slow response which is defective for practical application. The intrinsic defects typically generated during the synthesis of ZnO, e.g. oxygen vacancy, should be responsible for the slow response. Therefore, we have fabricated the high-resistive ZnO thin film based UV detector and studied its UV response characteristic. High resistance ZnO thin film is fabricated on glass by RF magnetron sputtering and followed by lift-off photolithography to form Al interdigital electrodes. SEM and XRD images show that the as-fabricated ZnO thin film grows with preferential orientation along c-axis. A linear I-V curve under UV illumination indicates the ohmic contact between Al and ZnO. From these results, we can calculate the resistivities to be 3.71 × 109 Ω·cm and 7.20 × 106 Ω·cm respectively when in the dark and under 365 nm UV light of 303 µW/cm2. The light-to-dark current ratio is up to 516 with bias of 40 V. Besides, the ZnO thin film detector shows a stable, rapid, repeatible and reproducible response with a rise time of 199 ms and a fall time of 217 ms when exposed to periodically switched UV light illumination at a bias voltage of 40 V. Moreover, the detector has a high selectivity for 365 nm UV light and the responsivity is 0.15 mA/W with the intensity of 303 µW/cm2. Furthermore, the transient response process is analyzed using the theory of surface recombination and bulk recombination of ZnO semiconductor

  13. Polyelectrolyte-assisted preparation and characterization of nanostructured ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Shijun

    2005-05-15

    The present work focuses on the synthesis and characterization of nanostructured ZnO thin films onto silicon wafers modified by self-assembled-monolayers via chemical bath deposition. Two precursor solutions were designed and used for the film deposition, in which two different polymers were introduced respectively to control the growth of the ZnO colloidal particles in solution. ZnO films were deposited from an aqueous solution containing zinc salt and hexamethylenetetramine (HMTA) in the presence of a graft-copolymer (P (MAA{sub 0.50}-co(MAA-EO{sub 20}){sub 0.50}){sub 70}). A film-formation-diagram was established based on the results obtained by scanning electron microscopy (SEM) and atomic force microscopy (AFM), which describes the influence of the concentration of HMTA and copolymer on the ZnO film formation. According to the film morphology, film formation can be classified into three categories: (a) island-like films, (b) uniform films and (c) canyon-like films. The ZnO films annealed at temperatures of 450 C, 500 C, 600 C and 700 C were examined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). After annealing, the films are polycrystalline ZnO with wurtzite structure. XRD measurements indicate that with increasing annealing temperature, the average grain size increases accordingly and the crystallinity of the films is improved. Upon heating to 600 C, the ZnO films exhibit preferred orientation with c-axis normal to substrate, whereas the films annealed at 700 C even show a more explicit texture. By annealing at temperatures above 600 C the ZnO film reacts with the substrate to form an interfacial layer of Zn{sub 2}SiO{sub 4}, which grows thicker at elevated annealing temperatures. The ZnO films annealed at 600 C and 700 C show strong UV emission. Another non-aqueous solution system for ZnO thin film deposition was established, in which 2- propanol was used as a solvent and Zn(CH3COO){sub 2}.2H{sub 2}O as well as NaOH as reactants

  14. ZnO thin films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tsoutsouva, M.G. [Laboratory of Physical Metallurgy, National Technical University of Athens, Zografos, 15780 Athens (Greece); Panagopoulos, C.N., E-mail: chpanag@metal.ntua.gr [Laboratory of Physical Metallurgy, National Technical University of Athens, Zografos, 15780 Athens (Greece); Papadimitriou, D. [National Technical University of Athens, Department of Physics, GR-15780 Athens (Greece); Fasaki, I.; Kompitsas, M. [Theor. and Phys./Chem. Institute, National Hellenic Research Foundation, 48 Vas. Konstantinou Ave., 11635 Athens (Greece)

    2011-04-15

    Zinc oxide (ZnO) thin films were deposited on soda lime glass substrates by pulsed laser deposition (PLD) in an oxygen-reactive atmosphere. The structural, optical, and electrical properties of the as-prepared thin films were studied in dependence of substrate temperature and oxygen pressure. High quality polycrystalline ZnO films with hexagonal wurtzite structure were deposited at substrate temperatures of 100 and 300 deg. C. The RMS roughness of the deposited oxide films was found to be in the range 2-9 nm and was only slightly dependent on substrate temperature and oxygen pressure. Electrical measurements indicated a decrease of film resistivity with the increase of substrate temperature and the decrease of oxygen pressure. The ZnO films exhibited high transmittance of 90% and their energy band gap and thickness were in the range 3.26-3.30 eV and 256-627 nm, respectively.

  15. High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires

    Institute of Scientific and Technical Information of China (English)

    Zhi Tao; Zichen Zhang; Yi-an Huang; Xiang Liu; Jing Chen; Wei Lei; Xiaofeng Wang; Lingfeng Pan; Jiangyong Pan; Qianqian Huang

    2016-01-01

    In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of CdSe quantum dots and reduced graphene oxide (RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 A W-1 and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.

  16. Easy Formation of Nanodisk-Dendritic ZnO Film via Controlled Electrodeposition Process

    Directory of Open Access Journals (Sweden)

    Nur Azimah Abd Samad

    2015-01-01

    Full Text Available A facile electrodeposition synthesis was introduced to prepare the nanodisk-dendritic ZnO film using a mixture solution of zinc chloride (ZnCl2 with potassium chloride (KCl that acted as a directing agent. This study aims to determine the best photoelectrochemical response for solar-induced water splitting. Based on our results obtained, it was found that an average diagonal of nanodisk was approximately 1.70 µm with the thickness of ≈150 nm that was successfully grown on the surface of substrate. The photocatalytic and photoelectrochemical responses of the resultant wurtzite type based-nanodisk-dendrite ZnO film as compared to the as-prepared ZnO film were monitored and evaluated. A photocurrent density of 19.87 mA/cm2 under ultraviolet rays and 14.05 mA/cm2 under visible light (500 nm was recorded for the newly developed nanodisk-dendritic ZnO thin film. It was believed that nanodisk-dendritic ZnO film can harvest more incident photons from the illumination to generate more photoinduced charge carriers to trigger the photocatalytic and photoelectrochemical reactions. Moreover, strong light scattering effects and high specific surface area of 2D nanostructures aid in the incident light absorption from any direction.

  17. Properties and characterization of bionanocomposite films prepared with various biopolymers and ZnO nanoparticles.

    Science.gov (United States)

    Kanmani, Paulraj; Rhim, Jong-Whan

    2014-06-15

    This study was aimed to develop biopolymer based antimicrobial films for active food packaging and to reduce environmental pollution caused by accumulation of synthetic packaging. The ZnO NPs were incorporated as antimicrobials into different biopolymers such as agar, carrageenan and CMC. Solvent casting method was performed to prepare active nanocomposite films. Methods such as FE-SEM, FT-IR and XRD were used to characterize resulting films. Physical, mechanical, thermal and antimicrobial properties were also examined. Remarkable surface morphological differences were observed between control and nanocomposite films. The crystallinity of ZnO was confirmed by XRD analysis. The addition of ZnO NPs increased color, UV barrier, moisture content, hydrophobicity, elongation and thermal stability of the films, while decreased WVP, tensile strength and elastic modulus. ZnO NPs impregnated films inhibited growth of L. monocytogenes and E. coli. So these newly prepared nanocomposite films can be used as active packaging film to extend shelf-life of food.

  18. Preparation and characterization of ZnO and Fe-doped ZnO films by sol-gel method

    OpenAIRE

    Zhang, Xin; Wang,Jiangang; Ma, Jing; Hu, Jianwen

    2016-01-01

    ZnO and Fe-doped ZnO thin films are prepared on glass substrate by sol-gel method, and the surface morphology, structure and optical property are analyzed by scanning electron microscope (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD) and UV-Vis-NIR spectrophotometer. The results show that both films have a smooth surface and a hexagonal wurtzite structure with orienting along the (101) plane. Compared with the ZnO film, the surface of Fe-doped ZnO film becomes smoother, and its...

  19. Improved Response of ZnO Films for Pyroelectric Devices

    Directory of Open Access Journals (Sweden)

    Shih-Yuan Yu

    2012-12-01

    Full Text Available Increasing the temperature variation rate is a useful method for enhancing the response of pyroelectric devices. A three-dimensional ZnO film was fabricated by the aerosol deposition (AD rapid process using the shadow mask method, which induces lateral temperature gradients on the sidewalls of the responsive element, thereby increasing the temperature variation rate. To enhance the quality of the film and reduce the concentration of defects, the film was further treated by laser annealing, and the integration of a comb-like top electrode enhanced the voltage response and reduced the response time of the resulting ZnO pyroelectric devices.

  20. Plasmonic materials based on ZnO films and their potential for developing broadband middle-infrared absorbers

    Directory of Open Access Journals (Sweden)

    Yunus E. Kesim

    2014-07-01

    Full Text Available Noble metals such as gold and silver have been extensively used for plasmonic applications due to their ability to support plasmons, yet they suffer from high intrinsic losses. Alternative plasmonic materials that offer low loss and tunability are desired for a new generation of efficient and agile devices. In this paper, atomic layer deposition (ALD grown ZnO is investigated as a candidate material for plasmonic applications. Optical constants of ZnO are investigated along with figures of merit pertaining to plasmonic waveguides. We show that ZnO can alleviate the trade-off between propagation length and mode confinement width owing to tunable dielectric properties. In order to demonstrate plasmonic resonances, we simulate a grating structure and computationally demonstrate an ultra-wide-band (4–15 μm infrared absorber.

  1. Plasmonic materials based on ZnO films and their potential for developing broadband middle-infrared absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Kesim, Yunus E., E-mail: yunus.kesim@bilkent.edu.tr; Battal, Enes [Department of Electrical and Electronics Engineering, Bilkent University, Ankara, 06800 (Turkey); UNAM-National Nanotechnology Research Center, Bilkent University, Ankara, 06800 (Turkey); Okyay, Ali K. [Department of Electrical and Electronics Engineering, Bilkent University, Ankara, 06800 (Turkey); UNAM-National Nanotechnology Research Center, Bilkent University, Ankara, 06800 (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800 (Turkey)

    2014-07-15

    Noble metals such as gold and silver have been extensively used for plasmonic applications due to their ability to support plasmons, yet they suffer from high intrinsic losses. Alternative plasmonic materials that offer low loss and tunability are desired for a new generation of efficient and agile devices. In this paper, atomic layer deposition (ALD) grown ZnO is investigated as a candidate material for plasmonic applications. Optical constants of ZnO are investigated along with figures of merit pertaining to plasmonic waveguides. We show that ZnO can alleviate the trade-off between propagation length and mode confinement width owing to tunable dielectric properties. In order to demonstrate plasmonic resonances, we simulate a grating structure and computationally demonstrate an ultra-wide-band (4–15 μm) infrared absorber.

  2. Deposition of ZnO Films on Freestanding CVD Thick Diamond Films

    Institute of Scientific and Technical Information of China (English)

    SUN Jian; BAI Yi-Zhen; YANG Tian-Peng; XU Yi-Bin; WANG Xin-Sheng; DU Guo-Tong; WU Han-Hua

    2006-01-01

    @@ For ZnO/diamond structured surface acoustic wave (SAW) filters, performance is sensitively dependent on the quality of the ZnO films. In this paper, we prepare highly-oriented and fine grained polycrystalline ZnO thin films with excellent surface smoothness on the smooth nucleation surfaces of freestanding CVD diamond films by metal organic chemical vapour deposition (MOCVD). The properties of the ZnO films are characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) spectrum. The influences of the deposition conditions on the quality of ZnO films are discussed briefly. ZnO/freestanding thick-diamond-film layered SAW devices with high response frequencies are expected to be developed.

  3. Hydrothermal Growth and Application of ZnO Nanowire Films with ZnO and TiO2 Buffer Layers in Dye-Sensitized Solar Cells

    Science.gov (United States)

    Yang, Weiguang; Wan, Farong; Chen, Siwei; Jiang, Chunhua

    2009-12-01

    This paper reports the effects of the seed layers prepared by spin-coating and dip-coating methods on the morphology and density of ZnO nanowire arrays, thus on the performance of ZnO nanowire-based dye-sensitized solar cells (DSSCs). The nanowire films with the thick ZnO buffer layer (~0.8-1 μm thick) can improve the open circuit voltage of the DSSCs through suppressing carrier recombination, however, and cause the decrease of dye loading absorbed on ZnO nanowires. In order to further investigate the effect of TiO2 buffer layer on the performance of ZnO nanowire-based DSSCs, compared with the ZnO nanowire-based DSSCs without a compact TiO2 buffer layer, the photovoltaic conversion efficiency and open circuit voltage of the ZnO DSSCs with the compact TiO2 layer (~50 nm thick) were improved by 3.9-12.5 and 2.4-41.7%, respectively. This can be attributed to the introduction of the compact TiO2 layer prepared by sputtering method, which effectively suppressed carrier recombination occurring across both the film-electrolyte interface and the substrate-electrolyte interface.

  4. Preparation and Characterization of Highly Oriented ZnO Film by Ultrasonic Assisted SILAR Method

    Institute of Scientific and Technical Information of China (English)

    GAO Xiangdong; LI Xiaomin; YU Weidong

    2005-01-01

    Ultrasonic Assisted SILAR method ( UA-SILAR ) was developed and highly oriented ZnO films were deposited on the glass substrate by this novel technique. The crystallinity and microstructure of as-deposited ZnO films were analyzed by means of XRD and SEM. Moreover, the underling deposition mechanism of ZnO films was discussed. Results show that obtained ZnO films exhibit an excellent crystallinity with the preferential orientation of (002) plane. The crystalline grain of films is about 40nm in size, which is supported by both the Sherrer equation and the SEM result. However, the ZnO film is composed of numerous clustered particulates in the size of 200 to 300 nm, and each particulate is the compact aggregation of smaller ZnO crystalline grains. It is speculated that the excellent crystallinity of ZnO films may chiefly originate from the cavatition effect of the ultrasonic rinsing process.

  5. Resistive switching characteristics and conduction mechanisms of nonvolatile memory devices based on Ga and Sn co-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Dohyun; Yun, Dong Yeol; Lee, Nam Hyun; Kim, Tae Whan, E-mail: twk@hanyang.ac.kr

    2015-07-31

    Nonvolatile memory devices were fabricated utilizing Ga and Sn co-doped ZnO (GZTO) films formed by using a solution process method. X-ray diffraction patterns showed that the crystallinity of the annealed GZTO films was an amorphous phase. X-ray photoelectron spectroscopy spectra of the GZTO films depicted Zn−O, Ga−O, and Sn−O bonds. Current–voltage measurements on the Al/GZTO/indium-tin-oxide (ITO) devices at 300 K showed bipolar resistive switching behaviors. The resistances at both the low resistance state (LRS) and high resistance state (HRS) measured at 0.5 V for the devices maintain almost constant without any damage and breakdown above 130 s, indicative of the memory stability of the devices. A difference in the resistance between the HRS and the LRS was more than 1 order of the magnitude. The conduction mechanisms of the HRS in the set process for the Al/GZTO/ITO devices were dominated by a space-charge-limited current model. - Highlights: • Nonvolatile memory devices were fabricated utilizing Ga and Sn co-doped ZnO (GZTO) films. • X-ray diffraction patterns showed that the annealed GZTO films were an amorphous phase. • Current–voltage measurements on the devices showed bipolar resistive switching behaviors. • One order magnitude difference in resistance between low and high resistance states (HRS) • Space charge limited conduction is the dominant conduction mechanisms of the HRS.

  6. Nanostructured ZnO films: A study of molecular influence on transport properties by impedance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sappia, Luciano D.; Trujillo, Matias R. [Instituto Superior de Investigaciones Biológicas (INSIBIO), CONICET, Chacabuco 461, T4000ILI San Miguel de Tucumán (Argentina); Laboratorio de Medios e Interfases (LAMEIN), Departamento de Bioingeniería, Fac. de Cs. Exactas y Tecnología, Universidad Nacional de Tucumán, Av. Independencia 1800, 4000 San Miguel de Tucumán (Argentina); Lorite, Israel [Division of Superconductivity and Magnetism, Institute for Experimental Physics II, University of Leipzig, Linnéstrasse 5, 04103 Leipzig (Germany); Madrid, Rossana E., E-mail: rmadrid@herrera.unt.edu.ar [Instituto Superior de Investigaciones Biológicas (INSIBIO), CONICET, Chacabuco 461, T4000ILI San Miguel de Tucumán (Argentina); Laboratorio de Medios e Interfases (LAMEIN), Departamento de Bioingeniería, Fac. de Cs. Exactas y Tecnología, Universidad Nacional de Tucumán, Av. Independencia 1800, 4000 San Miguel de Tucumán (Argentina); Tirado, Monica [NanoProject and Laboratorio de Nanomateriales y Propiedades Dieléctricas, Departamento de Física, Universidad Nacional de Tucumán, Avenida Independencia 1800, Tucumán (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); and others

    2015-10-15

    Graphical abstract: - Highlights: • We study electrical transport in nanostructured ZnO films by impedance spectroscopy. • Bioaggregates on the surface produce strong changes in film transport properties. • This behavior is explained by modeling data with RC parallel circuits. • Electrical responses of ZnO films to aggregates are promising for biosensing. - Abstract: Nanomaterials based on ZnO have been used to build glucose sensors due to its high isoelectric point, which is important when a protein like Glucose Oxidase (GOx) is attached to a surface. It also creates a biologically friendly environment to preserve the activity of the enzyme. In this work we study the electrical transport properties of ZnO thin films (TFs) and single crystals (SC) in contact with different solutions by using impedance spectroscopy. We have found that the composition of the liquid, by means of the charge of the ions, produces strong changes in the transport properties of the TF. The enzyme GOx and phosphate buffer solutions have the major effect in the conduction through the films, which can be explained by the entrapment of carriers at the grain boundaries of the TFs. These results can help to design a new concept in glucose biosensing.

  7. Structural and electrical properties of electric field assisted spray deposited pea structured ZnO film

    Science.gov (United States)

    Chaturvedi, Neha; Swami, Sanjay Kumar; Dutta, Viresh

    2016-05-01

    Spray deposition of ZnO film was carried out. The uneven growth of ZnO nanostructures is resulted for spray deposited ZnO film. Application of DC voltage (1000V) during spray deposition provides formation of pea like structures with uniform coverage over the substrate. Electric field assisted spray deposition provides increased crystallinity with reduced resistivity and improved mobility of the ZnO film as compared to spray deposited ZnO film without electric field. This with large area deposition makes the process more efficient than other techniques.

  8. Single-Crystal Mesoporous ZnO Thin Films Composed of Nanowalls

    KAUST Repository

    Wang, Xudong

    2009-02-05

    This paper presents a controlled, large scale fabrication of mesoporous ZnO thin films. The entire ZnO mesoporous film is one piece of a single crystal, while high porosity made of nanowalls is present. The growth mechanism was proposed in comparison with the growth of ZnO nanowires. The ZnO mesoporous film was successfully applied as a gas sensor. The fabrication and growth analysis of the mesoporous ZnO thin film gi ve general guidance for the controlled growth of nanostructures. It also pro vides a unique structure with a superhigh surface-to-volume ratio for surface-related applications. © 2009 American Chemical Society.

  9. Semiconducting properties of Al doped ZnO thin films.

    Science.gov (United States)

    Al-Ghamdi, Ahmed A; Al-Hartomy, Omar A; El Okr, M; Nawar, A M; El-Gazzar, S; El-Tantawy, Farid; Yakuphanoglu, F

    2014-10-15

    Aluminum doped ZnO (AZO) thin films were successfully deposited via spin coating technique onto glass substrates. Structural properties of the films were analyzed by X-ray diffraction, atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy. X-ray diffraction results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. The crystallite size of ZnO and AZO films was determined from Scherrer's formula and Williamson-Hall analysis. The lattice parameters of the AZO films were found to decrease with increasing Al content. Energy dispersive spectroscopy (EDX) results indicate that Zn, Al and O elements are present in the AZO thin films. The electrical conductivity, mobility carriers and carrier concentration of the films are increased with increasing Al doping concentration. The optical band gap (Eg) of the films is increased with increasing Al concentration. The AZO thin films indicate a high transparency in the visible region with an average value of 86%. These transparent AZO films may be open a new avenue for optoelectronic and photonic devices applications in near future.

  10. Effects of doping concentration on properties of Mn-doped ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    Gao Li; Zhang Jian-Min

    2009-01-01

    This paper reports that the radio frequency magnetron sputtering is used to fabricate ZnO and Mn-doped ZnO thin films on glass substrates at 500 ℃. The Mn-doped ZnO thin films present wurtzite structure of ZnO and have a smoother surface, better conductivity but no ferromagnetism. The x-ray photoelectron spectroscopy results show that the binding energy of Mn_(2p3/2) increases with increasing Mn content slightly, and the state of Mn in the Mn-doped ZnO thin films is divalent. The chemisorbed oxygen in the Mn-doped ZnO thin films increases with increasing Mn doping concentration. The photoluminescence spectra of ZnO and Mn-doped ZnO thin films have a similar ultraviolet emission. The yellow green emissions of 4 wt. % and 10 wt. % Mn-doped thin films are quenched, whereas the yellow green emission occurs because of abundant oxygen vacancies in the Mn-doped ZnO thin films after 20 wt. % Mn doping. Compared with pure ZnO thin film, the bandgap of the Mn-doped ZnO thin films increases with increasing Mn content.

  11. Hydrothermal Growth of Quasi-Monocrystal ZnO Thin Films and Their Application in Ultraviolet Photodetectors

    Directory of Open Access Journals (Sweden)

    Yung-Chun Tu

    2015-01-01

    Full Text Available Quasi-monocrystal ZnO film grown using the hydrothermal growth method is used for the fabrication of Cu2O/ZnO heterojunction (HJ ultraviolet photodetectors (UV-PDs. The HJ was formed via the sputtering deposition of p-type Cu2O onto hydrothermally grown ZnO film (HTG-ZnO-film. The effect of annealing temperature in the nitrogen ambient on the photoluminescence spectra of the synthesized ZnO film was studied. The optoelectronic properties of Cu2O/ZnO film with various Cu2O thicknesses (250–750 nm under UV light (365 nm; intensity: 3 mW/cm2 were determined. The UV sensitivity of the HTG-ZnO-film-based UV-PDs and the sputtered ZnO-film-based UV-PDs were 55.6-fold (SHTG and 8.8-fold (Ssputter, respectively. The significant gain in sensitivity (SHTG/Ssputter = 630% of the proposed ZnO-film-based device compared to that for the device based on sputtered film can be attributed to the improved photoelectric properties of quasi-monocrystal ZnO film.

  12. Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD

    Directory of Open Access Journals (Sweden)

    Long Giang Bach

    2016-01-01

    Full Text Available We have explored the effective approach to fabricate GZO/ZnO films that can make the pyramidal surface structures of GZO films for effective light scattering by employing a low temperature ZnO buffer layer prior to high temperature GZO film growth. The GZO thin films exhibit the typical preferred growth orientations along the (002 crystallographic direction at deposition temperature of 400°C and SEM showed that column-like granule structure with planar surface was formed. In contrast, GZO films with a pyramidal texture surface were successfully developed by the control of (110 preferred orientation. We found that the light diffuse transmittance of the film with a GZO (800 nm/ZnO (766 nm exhibited 13% increase at 420 nm wavelength due to the formed large grain size of the pyramidal texture surface. Thus, the obtained GZO films deposited over ZnO buffer layer have high potential for use as front TCO layers in Si-based thin film solar cells. These results could develop the potential way to fabricate TCO based ZnO thin film using MOCVD or sputtering techniques by depositing a low temperature ZnO layer to serve as a template for high temperature GZO film growth. The GZO films exhibited satisfactory optoelectric properties.

  13. Photoconductive ZnO films with embedded quantum dot or ruthenium dye sensitizers

    Directory of Open Access Journals (Sweden)

    Michael A. White

    2013-09-01

    Full Text Available We report a new type of solution-processed photoconductive film based on embedding photosensitizers (semiconductor nanocrystals or ruthenium dye molecules within conductive ZnO sol-gel matrices. Mixing photosensitizers directly with sol-gel precursors prior to film deposition yields highly colored ZnO films containing well-dispersed sensitizers. These films show internal photoconductivity quantum efficiencies up to ∼50% and photoresponses over 100 mA/W with visible photoexcitation, competitive with other more complex photodetectors reported recently. This simple motif is attractive for the development of robust sensitized-oxide photodetectors and for fundamental studies of photoinduced charge separation from a variety of molecular or quantum dot sensitizers into conductive oxides.

  14. Hydrothermal Growth and Application of ZnO Nanowire Films with ZnO and TiO2Buffer Layers in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Jiang Chunhua

    2009-01-01

    Full Text Available Abstract This paper reports the effects of the seed layers prepared by spin-coating and dip-coating methods on the morphology and density of ZnO nanowire arrays, thus on the performance of ZnO nanowire-based dye-sensitized solar cells (DSSCs. The nanowire films with the thick ZnO buffer layer (~0.8–1 μm thick can improve the open circuit voltage of the DSSCs through suppressing carrier recombination, however, and cause the decrease of dye loading absorbed on ZnO nanowires. In order to further investigate the effect of TiO2buffer layer on the performance of ZnO nanowire-based DSSCs, compared with the ZnO nanowire-based DSSCs without a compact TiO2buffer layer, the photovoltaic conversion efficiency and open circuit voltage of the ZnO DSSCs with the compact TiO2layer (~50 nm thick were improved by 3.9–12.5 and 2.4–41.7%, respectively. This can be attributed to the introduction of the compact TiO2layer prepared by sputtering method, which effectively suppressed carrier recombination occurring across both the film–electrolyte interface and the substrate–electrolyte interface.

  15. Development of novel control system to grow ZnO thin films by reactive evaporation

    Directory of Open Access Journals (Sweden)

    Gerardo Gordillo

    2016-07-01

    Full Text Available This work describes a novel system implemented to grow ZnO thin films by plasma assisted reactive evaporation with adequate properties to be used in the fabrication of photovoltaic devices with different architectures. The innovative aspect includes both an improved design of the reactor used to activate the chemical reaction that leads to the formation of the ZnO compound as an electronic system developed using the virtual instrumentation concept. ZnO thin films with excellent opto-electrical properties were prepared in a reproducible way, controlling the deposition system through a virtual instrument (VI with facilities to control the amount of evaporated zinc involved in the process that gives rise to the formation of ZnO, by means of the incorporation of PID (proportional integral differential and PWM (pulse width modulation control algorithms. The effectiveness and reliability of the developed system was verified by obtaining with good reproducibility thin films of n+-ZnO and i-ZnO grown sequentially in situ with thicknesses and resistivities suitable for use as window layers in chalcopyrite based thin film solar cells.

  16. Room temperature ferromagnetism in Cd-doped ZnO thin films through defect engineering

    Energy Technology Data Exchange (ETDEWEB)

    Debbichi, M., E-mail: mourad_fsm@yahoo.fr [Laboratoire de la matière condensée et nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Souissi, M. [College of Arts and Science Nayriya, Dammam University, 31441 Dammam (Saudi Arabia); Fouzri, A. [Laboratoire Physico-Chimie des Matériaux, Unité de Service Commun de Recherche ‘‘High Resolution X-ray Diffractometer’’, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Schmerber, G. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS) UMR 7504 CNRS-Université de Strasbourg, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2 (France); Said, M. [Laboratoire de la matière condensée et nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Alouani, M. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS) UMR 7504 CNRS-Université de Strasbourg, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2 (France)

    2014-06-15

    Highlights: • ZnO:Cd thin film grown on c-sapphire substrate by MOCVD method. • RTFM in ZnO:Cd thin film is detected by SQUID magnetometer measurement. • DFT theory is conducted to elucidate the mechanism of RTFM in Cd-doped ZnO. - Abstract: Room-temperature ferromagnetism is detected in undoped and cadmium-doped ZnO (ZnO:Cd) thin film grown on c-plane sapphire substrate by metal–organic chemical vapor deposition method. To elucidate the origin of ferromagnetism, a theoretical study based on density functional theory is conducted, focusing on the role of the neutral cation vacancy on the appearance of magnetism in Cd-doped ZnO thin film. The calculations revealed that Cd substitution at Zn sites contributes to the long-ranged ferromagnetism in ZnO by lowering the formation energy of Zn vacancies and thereby stabilizing Zn vacancies from which the magnetic moments originate.

  17. Linear and nonlinear optical investigations of nano-scale Si-doped ZnO thin films: spectroscopic approach

    Science.gov (United States)

    Jilani, Asim; Abdel-wahab, M. Sh.; Zahran, H. Y.; Yahia, I. S.; Al-Ghamdi, Attieh A.

    2016-09-01

    Pure and Si-doped ZnO (SZO) thin films at different concentration of Si (1.9 and 2.4 wt%) were deposited on highly cleaned glass substrate by radio frequency (DC/RF) magnetron sputtering. The morphological and structural investigations have been performed by atomic force electron microscope (AFM) and X-ray diffraction (XRD). The X-ray photoelectron spectroscopy was employed to study the composition and the change in the chemical state of Si-doped ZnO thin films. The optical observations like transmittance, energy band gap, extinction coefficient, refractive index, dielectric loss of pure and Si-doped ZnO thin films have been calculated. The linear optical susceptibility, nonlinear refractive index, and nonlinear optical susceptibility were also studied by the spectroscopic approach rather than conventional Z-scan method. The energy gap of Si-doped ZnO thin films was found to increase as compared to pure ZnO thin films. The crystallinity of the ZnO thin films was effected by the Si doping. The O1s spectra in pure and Si-doped ZnO revealed the bound between O-2 and Zn+2 ions and reduction in the surface oxygen with the Si doping. The chemical state analysis of Si 2p showed the conversation of Si to SiOx and SiO2. The increase in the first-order linear optical susceptibility χ (1) and third-order nonlinear optical susceptibility χ (3) was observed with the Si doping. The nonlinear studies gave some details about the applications of metal oxides in nonlinear optical devices. In short, this study showed that Si doping through sputtering has effected on the structural, surface and optical properties of ZnO thin films which could be quite useful for advanced applications such as metal-oxide-based optical devices.

  18. Cu-doped ZnO nanoporous film for improved performance of CdS/CdSe quantum dot-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Myeong-Soo; Son, Min-Kyu; Kim, Soo-Kyoung; Park, Songyi; Prabakar, Kandasamy; Kim, Hee-Je, E-mail: heeje@pusan.ac.kr

    2014-11-03

    Copper (Cu) doped zinc oxide (ZnO) powders were synthesized by co-precipitation method with different at% (0 and 0.5 at%) of Cu dopant. Cu-doped ZnO nanoporous (NP) films were fabricated to enhance the performance of the ZnO based cadmium sulfide (CdS) and cadmium selenide (CdSe) quantum dot-sensitized solar cells (QDSSCs). The existence of Cu ions in the Cu-doped ZnO NP film was detected by X-ray fluorescence. The surface morphology, microstructure and crystal structure of Cu-doped ZnO NP films were analyzed by scanning electron microscopy, transmission electron microscopy and X-ray diffraction. The optical property of CdS/CdSe co-sensitized Cu-doped ZnO NP film was studied by UV–vis absorption spectroscopy. The photovoltaic performance and electrical property of Cu-doped ZnO CdS/CdSe QDSSCs were studied by current–voltage characteristic curves and electrochemical impedance spectroscopy under air mass 1.5 condition. As a result, short circuit current density and fill factor increased from 9.074 mA/cm{sup 2} and 0.403 to 9.865 mA/cm{sup 2} and 0.427 respectively, based on the enhanced absorbance and electron transport by Cu-doping. This led to the increasing light conversion efficiency from 2.27% to 2.61%. - Highlights: • Cu-doped ZnO powders were synthesized by co-precipitation method. • Cu-doped ZnO nanoporous films with high crystallinity were uniformly deposited. • Absorbance of Cu-doped ZnO nanoporous film was enhanced. • Electron conductivity of Cu-doped ZnO nanoporous film was enhanced. • Performance of Cu-doped ZnO CdS/CdSe QDSSC was improved.

  19. Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Polster, S. [Chair of Electron Devices, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Cauerstrasse 6, 91058 Erlangen (Germany); Jank, M. P. M. [Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany); Frey, L. [Chair of Electron Devices, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Cauerstrasse 6, 91058 Erlangen (Germany); Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany)

    2016-01-14

    The correlation of defect content and film morphology with the charge-carrier transport in field-effect devices based on zinc oxide nanoparticles was investigated. Changes in the defect content and the morphology were realized by annealing and sintering of the nanoparticle thin films. Temperature-dependent electrical measurements reveal that the carrier transport is thermally activated for both the unsintered and sintered thin films. Reduced energetic barrier heights between the particles have been determined after sintering. Additionally, the energetic barrier heights between the particles can be reduced by increasing the drain-to-source voltage and the gate-to-source voltage. The changes in the barrier height are discussed with respect to information obtained by scanning electron microscopy and photoluminescence measurements. It is found that a reduction of surface states and a lower roughness at the interface between the particle layer and the gate dielectric lead to lower barrier heights. Both surface termination and layer morphology at the interface affect the barrier height and thus are the main criteria for mobility improvement and device optimization.

  20. Hydrothermal synthesis of 2D ordered macroporous ZnO films

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The ZnO films with two-dimensional ordered macroporous structure were successfully fabricated through hydrothermal crystal growth of ZnO on the ZnO substrate covered with a mouolayer of polystyrene (PS) spheres as template.The precursor solution of hydrothermal crystal growth of ZnO were prepared by equitramine (HMT).The confinement effect of the PS spheres template on the growth of ZnO nanorods and the influence of sodium citrate on the crystal growth of ZnO had been studied.The film surface morphology and the preferential growth of ZnO crystal were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD),respectively.Also,the photoluminescence spectrum of ZnO films had been measured,and the corresponding mechanism was discussed.

  1. Effects of silicon porosity on physical properties of ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Bouzourâa, M.-B. [Université de Tunis El Manar, Faculté des Sciences de Tunis, Unité de nanomatériaux et photonique, 2092 El Manar - Tunis (Tunisia); Université Lorraine, Institut Jean Barriol, LCP-A2MC, 1 Bd Arago, 57078 Metz (France); Naciri, A. En, E-mail: aotmane.en-naciri@univ-lorraine.fr [Université Lorraine, Institut Jean Barriol, LCP-A2MC, 1 Bd Arago, 57078 Metz (France); Moadhen, A. [Université de Tunis El Manar, Faculté des Sciences de Tunis, Unité de nanomatériaux et photonique, 2092 El Manar - Tunis (Tunisia); Rinnert, H. [Université Lorraine, Institut Jean Lamour, 54506 Vanduvre-lès-Nancy (France); Guendouz, M. [Université Européenne de Bretagne, CNRS FOTON-UMR 6082, 6 rue de Kérampont, BP 80518, 22305 Lannion Cedex (France); Battie, Y. [Université Lorraine, Institut Jean Barriol, LCP-A2MC, 1 Bd Arago, 57078 Metz (France); Chaillou, A. [Université Européenne de Bretagne, CNRS FOTON-UMR 6082, 6 rue de Kérampont, BP 80518, 22305 Lannion Cedex (France); and others

    2016-06-01

    We report on structural and optical properties of ZnO thin films deposited on different Si-based substrates presenting different porosities. ZnO layers were prepared by sol gel method and deposited on crystalline silicon (ZnO/Si), mesoporous silicon (ZnO/PS{sup +}) and nanoporous silicon (ZnO/PS{sup −}) by spin coating. Several techniques such as scanning electron microscope (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence spectroscopy (PL) and spectroscopic ellipsometry (SE) were used to study the influence of the pore size of porous silicon (PS) on physical properties of ZnO films. SEM images revealed the formation of ZnO granular nanoparticles on Si, PS{sup −} and PS{sup +} substrates. We show by the XRD analysis that hexagonal crystallized (002) ZnO is mainly obtained for ZnO/PS{sup −} system causing by a strong absorption of the capillary effect and high adhesion to PS{sup −} surface. An intense PL related to ZnO and PS{sup −} was demonstrated for ZnO/PS{sup −} in UV and visible ranges. Optical properties of ZnO were determined and analyzed by SE using Tanguy dispersion model. For each sample, a specific optical model was carried out. SE confirms a good physical properties of ZnO/PS{sup −} comparing to ZnO/Si and ZnO/PS{sup +}. For example, the good crystallinity is characterized by low damping factor value (Γ). This value was found by SE to be low (29 meV) for the ZnO/PS{sup −}, while the damping factors of ZnO/Si and ZnO/PS{sup +} are 47 meV and 70 meV, respectively. The amplitude of dielectric function of ZnO/PS{sup −} around 3.4 eV reveals an increase of grain size and crystallinity of ZnO layer. - Highlights: • ZnO/PS{sup −} system can be considered as the best substrate for depositing the ZnO film. • ZnO/PS{sup −} system which exhibits large emission in both UV and visible domains. • Photoluminescence and ellipsometry show good optical properties of ZnO/PS{sup −}. • ZnO/PS{sup −} as a

  2. Development of glucose biosensor based on ZnO nanoparticles film and glucose oxidase-immobilized eggshell membrane

    Directory of Open Access Journals (Sweden)

    Bohari Noor Aini

    2015-06-01

    Full Text Available A novel electrochemical glucose biosensor was developed by depositing an ionic liquid (IL (e.g., 1-ethyl-3-methylimidazolium trifluoromethanesulfonate; [EMIM][Otf], ZnO nanoparticles (ZnONPs and eggshell membrane (ESM on a modified glassy carbon electrode (GCE for determination of glucose. Glucose oxidase (GOx was covalently immobilized on eggshell membrane with glutaraldehyde as a cross-linker. Methylene blue was used as a redox indicator to enhance the electron transfer capacity and to ensure stability of both the oxidized and reduced forms in the reaction of enzyme and substrate. The morphological characteristics of microstructures eggshell membranes, chitosan, GOx/ESM, GOx/ZnONPs/IL/ESM and GOx/ZnONPs-IL/CHIT were observed using scanning electron microscopy (SEM. The effects of scan rate, time and pH on the response of glucose biosensors were studied in detail. Under optimal conditions (pH 6.5, 50 s, cyclic voltammetry showed different glucose concentrations on the range of 1 × 10−12 to 0.6 M, with a detection limit of 1 × 10−13 M. The GOx/ZnONPs/IL/ESM was found to be more sensitive as compared to GOx/ZnONPs-IL/CHIT. This developed glucose biosensor detection approach has several advantages such as fast, simple and convenient method, sensitivity, low cost, eco-friendly, low concentrations and remarkable catalytic activities of current signals during glucose reaction.

  3. Mn doped nanostucture ZnO thin film for photo sensor and gas sensor application

    Science.gov (United States)

    Mahajan, Sandip V.; Upadhye, Deepak S.; Shaikh, Shahid U.; Birajadar, Ravikiran B.; Siddiqui, Farha Y.; Ghule, Anil V.; Sharma, Ramphal

    2013-02-01

    Mn doped nanostructure ZnO thin film prepared by soft chemically route method. ZnO thin films were deposited on glass substrate by successive ionic layer adsorption and reaction technique (SILAR). After deposit ZnO thin film dipped in MnSO4 solution for 1 min. The optical properties as absorbance were determined using UV-Spectrophotometer and band gap was also calculated. The Structural properties were studied by XRD. The improvement in gas sensing properties was found to enhance after doping of Mn on ZnO thin film. The Photo Sensor nature was calculated by I-V characteristics.

  4. Optical characterization of ZnO thin films deposited by RF magnetron sputtering method

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    This study investigated the process parameter effects on the structural and optical properties of ZnO thin film using radio frequency (RF) magnetron sputtering on amorphous glass substrates. The process parameters included RF power and working pressure. Results show that RF power was increased to promote the crystalline quality and decrease ZnO thin film defects. However, when the working pressure was increased to 3 Pa the ZnO thin film crystalline quality became worse. At a 200 W RF power and 1 Pa working pressure, the ZnO thin film with an optical band gap energy of 3.225 eV was obtained.

  5. Photocatalytic and optical properties of nanocomposite TiO2-ZnO thin films

    Science.gov (United States)

    Mohamed, S. H.; El-Hagary, M.; Althoyaib, S.

    2012-01-01

    Nanocomposite TiO2-ZnO thin films, with different ZnO content, were deposited by electron-beam evaporation on glass and Si(1 0 0) substrates. The resulting films were annealed in air for 1 h at 450 °C. X-ray diffraction revealed the presence of monoclinic β-TiO2 and hexagonal ZnO for the films prepared with ZnO content of 0 at.% and 100 at.%, respectively. Mixed monoclinic β-TiO2 and hexagonal ZnO phases were observed at higher ZnO content between 50 at.% and 85 at.%. Spectroscopic ellipsometry (SE) was employed to determine the film thickness and optical constants. A two-layer model was used to describe the experimental ellipsometric data. At any wavelength longer than 390 nm, the refractive index decreases gradually with increasing ZnO content in the composite films. The optical band gap increased with increasing ZnO content. The photocatalytic behavior of TiO2-ZnO thin films was mainly evaluated by measuring the decomposition of methylene blue. The nanocomposite film with ZnO content of 8 at.% has the best photocatalytic activities.

  6. An Experimental Insight into the ZnO Thin Films Properties Prepared by Dip Coating Technique

    Directory of Open Access Journals (Sweden)

    M. Benhaliliba

    2016-03-01

    Full Text Available The physical properties of the pure and metal doped ZnO films are investigated using a low cost dip coating technique. The films have grown slowly onto a glass substrate at room temperature. Based on X-ray pattern parameters are extracted such as grain size, lattice parameters. Optical measurements within the UV-Vis band give us the transmittance of films ( 80 % and optical band gap. Using the Hall Effect measurement (HMS in room temperature, we determine the bulk density of charge carriers, mobility and their electrical resistivity.

  7. Efficient solution route to transparent ZnO semiconductor films using colloidal nanocrystals

    Directory of Open Access Journals (Sweden)

    Satoshi Suehiro

    2016-09-01

    Full Text Available ZnO nanocrystals (NCs were synthesized by heating Zn (II acetylacetonate in oleic acid/oleylamine in the presence of 1,2-hexadecanediol at 220 °C. Transmission electron microscopy (TEM and dynamic light scattering (DLS measurements revealed the formation of monodispersed ZnO NCs of ca. 7 nm. ZnO NC assembled films were fabricated on a glass substrate by deposition with the colloidal ZnO NCs dispersed in toluene. The film composed of the NCs showed good optical transparency in the visible to near-infrared region. A device coupling the ZnO NC film with a p-type Cu2ZnSnS4 (CZTS NC film exhibited an obvious diode-like current–voltage behavior. The results suggest that the transparent ZnO film has a potentiality to be used for an n-type window layer in some optoelectronic applications.

  8. Direct current magnetron sputter-deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hoon, Jian-Wei [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Chan, Kah-Yoong, E-mail: kychan@mmu.edu.my [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Krishnasamy, Jegenathan; Tou, Teck-Yong [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Knipp, Dietmar [School of Engineering and Science, Jacobs University Bremen, 28759 Bremen (Germany)

    2011-01-15

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  9. Studies on Crystal Orientation of ZnO Film on Sapphire Using High-throughout X-ray Diffraction

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The orientation of the nano-columnar ZnO films grown on sapphire using the technique of metal-organic chemical vapor deposition (MOCVD) exhibits deviation because of the mismatch between the crystal lattices of the films and the sapphire substrate. A high-throughout X-ray diffraction method was employed to determine the crystal orientation of the ZnO films at a time scale of the order of minutes based on the general area detection diffraction system (GADDS). This rapid, effective, and ready method, adapted for characterizing the orientation of the nano-columnar crystals is used to directly explain the results of observation of the X-ray diffraction images, by the measurements of the orientations of the crystal columns of the ZnO films along c-axis and in parallel to ab plane.

  10. Analysis of Li-related defects in ZnO thin films influenced by annealing ambient

    Indian Academy of Sciences (India)

    Bing Wang; Lidan Tang

    2014-02-01

    Li-doped ZnO thin films were grown on quartz substrates by radio frequency magnetron sputtering and in situ annealing under O2 or Ar ambient. Li-related defects in ZnO films strongly depend on the annealing ambient. AFM and XRD indicated that ZnO films possessed a good crystallinity with -axis orientation, uniform thickness and dense surface. Electrical and optical properties demonstrated that, an amount of LiZn defect had existed in ZnO annealed under O2 ambient and an amount of Lii(o) defect had existed in ZnO annealed under Ar ambient. First-principle calculations were performed to calculate formation energies of Li-doped ZnO in order to explain the formation mechanism of Li-related defects in ZnO.

  11. Effect of substrate temperature on the structure, electrical and optical properties of Mo doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Guifeng; Zhao, Xiaoli; Zhang, Hui; Wang, He; Liu, Feifei; Zhang, Xiaoqiang [Key Lab. for New Type of Functional Materials in Hebei Province, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China); Gao, Jianbo [China Institute of Atomic Energy, Beijing 102413 (China); Zhao, Yanmin; Zhang, Chao [No. 18TH Research Institute, China Electronics Technology Group Corporation, Tianjin 300384 (China); Tao, Junguang, E-mail: taojunguang@163.com [Key Lab. for New Type of Functional Materials in Hebei Province, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China)

    2016-09-15

    Highlights: • MZO thin films were prepared by RF magnetron sputtering from ZnO target and DC magnetron sputtering from Mo target. • All films are polycrystalline with preferential c-axis growth. • The various properties of films fabricated at varied substrate temperature have been studied. • The valence of the Mo ions in the ZnO matrix is mixture of +5 and +6. - Abstract: Mo-doped ZnO (MZO) transparent conductive thin films were prepared on glass substrate under various substrate temperature from 50 °C to 200 °C. The microstructural, electrical and optical properties of the MZO films were investigated by X-ray diffraction (XRD), Hall effect and UV–vis spectrophotometer. Based on XRD measurements, all films are polycrystalline with preferential c-axis growth. The lowest resistivity was obtained to be 2.8 × 10{sup −3} Ω·cm. According to X-ray photoelectron spectroscopy (XPS) measurement, the valence of the Mo ions in the ZnO matrix is a mixture of +5 and +6. In addition, the transmittance of the film is ∼80% throughout the visible light region. Our results indicate that the MZO films are suitable for potential transparent optoelectronic applications.

  12. Performance improvement of ZnO film by room-temperature oxygen plasma pretreatment

    Institute of Scientific and Technical Information of China (English)

    ZHAO Ping; XIA Yi-ben; WANG Lin-jun; LIU Jian-min; XU Run; PENG Hong-yan; SHI Wei-min

    2006-01-01

    The room-temperature oxygen plasma treatment before depositing ZnO films on nanocrystalline diamond substrates was studied. The nanocrystalline diamond substrates were pretreated in oxygen plasma at 50 W for 30 min at room temperature and then ZnO films were sputtered on diamond substrates at 400 W. The X-ray diffraction (XRD) patterns show that the c-axis orientation of ZnO film increases evidently after oxygen plasma pretreatment. The AFM and SEM measurements also show that the high c-axis orientation of ZnO film and the average surface roughness is less than 5 nm. The resistivity of ZnO films increases nearly two orders of magnitude to 1.04×108 Ω·cm. As a result,room-temperature oxygen plasma pretreatment is indeed a simple and effective way to improve the performance of ZnO film used in SAW devices by ameliorating the combination between diamond film and ZnO film and also complementing the absence of oxygen atoms in ZnO film.

  13. Surface morphology and photoluminescence properties of ZnO thin films obtained by PLD

    Institute of Scientific and Technical Information of China (English)

    FAN Xi-mei; LIAN Jian-she; GUO Zuo-xing; JIANG Qing

    2005-01-01

    ZnO thin films on Si(111) substrate were deposited by laser ablation of Zn target in oxygen reactive atmosphere, Nd-YAG laser with wavelength of 1 064 nm was used as laser source. XRD and FESEM microscopy were applied to characterize the structure and surface morphology of the deposited ZnO films. The optical properties of the ZnO thin films were characterized by photoluminescence. The UV and deep level (yellow-green) light were observed from the films. The UV light is the intrinsic property and deep level light is attributed to the existence of antisite defects (OZn). The intensity of UV and deep level light depends strongly on the surface morphology and is explained by the surface roughness of ZnO film. A strongly UV emission can be obtained from ZnO film with surface roughness in nanometer range.

  14. Appraisal on Textured Grain Growth and Photoconductivity of ZnO Thin Film SILAR

    Directory of Open Access Journals (Sweden)

    Deepu Thomas

    2014-01-01

    Full Text Available ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR method. The textured grain growth along c-axis in pure ZnO thin films and doped with Sn was studied. The structural analysis of the thin films was done by X-ray diffraction and surface morphology by scanning electron microscopy. Textured grain growth of the samples was measured by comparing the peak intensities. Textured grain growth and photo current in ZnO thin films were found to be enhanced by doping with Sn. ZnO thin film having good crystallinity with preferential (002 orientation is a semiconductor with photonic properties of potential benefit to biophotonics. From energy dispersive X-ray analysis, it is inferred that oxygen vacancy creation is responsible for the enhanced textured grain growth in ZnO thin films.

  15. Persistent photoconductivity in highly porous ZnO films

    Science.gov (United States)

    Reemts, Jens; Kittel, Achim

    2007-01-01

    ZnO and ZnO-dye hybrid films prepared by electrochemical deposition are highly porous if fabricated in the presence of structure directing agents and they can easily be sensitized by various molecules. If the material is sensitized with the appropriate molecules, it becomes interesting for various sensor applications, i.e., gas sensors and biosensors, or as an electrode material for solar energy conversion in dye sensitized solar cells. In the present work, the focus is on dye sensitized ZnO as a model system. The long term photoconductivity transients have been investigated in such kind of material. Upon excitation with different wavelengths, the conductivity increases already under sub-band-gap illumination due to widely distributed trap states within the band gap. The slow photoconductivity transients follow a stretched exponential law if the illumination is rapidly changing in a dry atmosphere. The underlying mechanism of persistent photoconductivity can be attributed to a lattice relaxation process of surface states, immediately after electrons have been photoexcited into distributed surface states located inside the band gap of the ZnO thin film.

  16. Microstructure of ZnO Thin Films Deposited by High Power Impulse Magnetron Sputtering (Postprint)

    Science.gov (United States)

    2015-03-01

    ABSTRACT High power impulse magnetron sputtering was used to deposit thin (~100 nm) zinc oxide (ZnO) films from a ceramic ZnO target onto substrates...used to deposit thin (~100 nm) zinc oxide (ZnO) films from a ceramic ZnO target onto substrates heated to 150 °C. The resulting films had strong...support from the Air Force Office of Scientific Research Aerospace Materials for Extreme Environments program (14RX13COR) is gratefully acknowledged

  17. Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

    OpenAIRE

    2012-01-01

    The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis o...

  18. Optimization of (002)-Oriented ZnO Film Synthesis in Sol-Gel Process and Film Photoluminescence Property

    Institute of Scientific and Technical Information of China (English)

    YAN Jun-Feng; ZHAO Li-Li; ZHANG Zhi-Yong

    2008-01-01

    By orthogonal design theory, technological parameters of the (002)-oriented ZnO film prepared in sol-gel process are optimized. A set of technological parameters for growing highly (002)-oriented ZnO film is obtained. As a result, it is proven that the Zn2+ concentration is the most important factor to grow a highly (O02)-oriented ZnO film. We take an appropriate Zn2+ concentration 0.35 mol/L for the aimed film, of which photoluminescence property is better than those of the films derived from other Zn2+ concentrations precursor solution. The Zn2+ concentration either larger or smaller than 0.35 mol/L leads to the (002)-oriented degree decrease of films. By employing an atom force microscope, a hexagonal atom arrangement, which indicates that the film site detected is a ZnO single crystal, is observed in the surface of the highly (002)-oriented film.

  19. Effect of Co-doping content on hydrothermal derived ZnO array films

    Energy Technology Data Exchange (ETDEWEB)

    He Xinhua, E-mail: imxhhe@scut.edu.cn [College of Materials Science and Engineering, South China University of Technology, Guangzhou 510640 (China); Department of Information Systems, City University of Hong Kong (Hong Kong); Yang Hu; Chen Zhiwu [College of Materials Science and Engineering, South China University of Technology, Guangzhou 510640 (China); Liao, Stephen S Y, E-mail: issliao@cityu.edu.hk [Department of Information Systems, City University of Hong Kong (Hong Kong)

    2012-08-01

    Cobalt doped ZnO films are synthesised using a hydrothermal process. The effect of Co{sup 2+} concentration on morphology, phase composition, crystallisation and spectroscopic characteristics of ZnO films is investigated. The results indicate that both the structure and morphology of the ZnO films evolve with the concentration of cobalt ions incorporated into the lattice. In the presence of a small amount of Co{sup 2+} ions, films are formed that comprise hexagonal ZnO nanorods, oriented with the c-axis perpendicular to the substrate. With increasing amount of Co{sup 2+}, cracks in the ZnO nanorods can be observed and growth in the [0 0 1] direction is significantly inhibited. When the Co{sup 2+} concentration exceeds 0.010 M, ZnO rods with the typical hexagonal structure are no longer observed and instead, ZnO films comprising close-packed grains with an irregular polygonal structure are formed. The epitaxial growth of ZnO films is nearly completely inhibited when the concentration of Co{sup 2+} is increased above 0.050 M. This behaviour can be explained by the selective adsorption of the organic substances in the solution onto the (0 0 1) ZnO crystal face, thus inhibiting growth in the [0 0 1] direction and disrupting the crystallisation of ZnO films. Increasing the Co content deteriorates the crystallisation of ZnO rods and increases tensile stresses present in the ZnO films.

  20. Textured ZnO thin films by RF magnetron sputtering

    CERN Document Server

    Ginting, M; Kang, K H; Kim, S K; Yoon, K H; Park, I J; Song, J S

    1999-01-01

    Textured thin films ZnO has been successfully grown by rf magnetron sputtering method using a special technique of introducing a small amount of water and methanol on the deposition chamber. The grain size of the textured surface is highly dependent on the argon pressure during the deposition. The pressure in this experiment was varied from 50 mTorr down to 5 mTorr and the highest grain size of the film is obtained at 5 mTorr. The total transmittance of the films are more than 85% in the wavelength of 400 to 800 nm, and haze ratio of about 14% is obtained at 400 nm wavelength. Beside the textured surface, these films also have very low resistivity, which is lower than 1.4x10 sup - sup 3 OMEGA centre dot cm. X-ray analysis shows that the films with textured surface have four diffraction peaks on the direction of (110), (002), (101) and (112), while the non-textured films have only (110) and (002) peaks. Due to the excellent characteristics of this film, it will make the film very good TCO alternatives for the ...

  1. Effect of Rapid Thermal Annealing Ambient on Photoluminescence of ZnO Films

    Institute of Scientific and Technical Information of China (English)

    XU Xiao-Yan; MA Xiang-Yang; JIN Lu; YANG De-Ren

    2012-01-01

    The effects of rapid thermal annealing (RTA) ambient on photoluminescence (PL) of sputtered ZnO films are investigated.The RTA at 800℃ under either oxygen (O2) or argon (Ar) ambient can remarkably enhance the PL of the ZnO films due to the improved crystallinities of the ZnO films.It is somewhat unexpected that the ZnO film which received the RTA under O2 ambient exhibits weaker near-band-edge (NBE) PL than that which received the RTA under Ar ambient.It is supposed that a certain amount of negatively charged oxygen species exist on the surface of the ZnO film that received the RTA under O2 ambient,leading to a build-in electric field.This in turn reduces the recombination probability of photo-generated electrons and holes,resulting in the suppressed NBE PL.

  2. Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

    Institute of Scientific and Technical Information of China (English)

    Liu Xue-Chao; Chen Zhi-Zhan; Shi Er-Wei; Liao Da-Qian; Zhou Ke-Jin

    2011-01-01

    This paper reports that the (Ga, Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co2+ and Ga3+ ions substitute for Zn2+ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic (Ga, Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.

  3. Effect of growth rate on the structure and physical properties of Mo doped ZnO films

    Science.gov (United States)

    Chen, Guifeng; Zhao, Xiaoli; Zhang, Hui; Liu, Feifei; Wang, Yong; Wang, Haitao; Gao, Jianbo; Zhao, Yanmin; Li, Wei; Tao, Junguang

    2016-11-01

    In this work, Mo-doped ZnO (MZO) films were prepared on glass substrate via magnetron co-sputtering of ZnO and Mo targets. Based on the x-ray diffraction (XRD) measurements, all films are crystallized into wurtzite ZnO structure with its c-axis perpendicular to the substrates. Higher growth rate leads to slightly decrease of the optical energy gap from 3.35 eV to 3.25 eV. Hall effect measurements were carried out which suggested the lowest resistivity of 2.8 × 10-3 Ω cm. In addition, UV-vis measurement shows that the transmittance in the visible light region is ∼80%, which indicates that MZO film is suitable for potential transparent optoelectronic applications.

  4. Synthesis and annealing study of RF sputtered ZnO thin film

    Science.gov (United States)

    Singh, Shushant Kumar; Sharma, Himanshu; Singhal, R.; Kumar, V. V. Siva; Avasthi, D. K.

    2016-05-01

    In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structure of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.

  5. Fabrication and Photo-Detecting Performance of 2D ZnO Inverse Opal Films

    Directory of Open Access Journals (Sweden)

    Xin Lin

    2016-09-01

    Full Text Available Two-dimensional (2D ZnO inverse opal (IO films were fabricated by co-assembly of sacrificed polystyrene (PS microspheres and citric acid/zinc acetate (CA/ZA aqueous solution at an oil–water interface followed by calcination. Their morphologies could be controlled by the surface property of polymer templates and CA/ZA molar ratio. Moreover, photo-detecting devices based on such films were constructed, which showed high photocurrent (up to 4.6 μA, excellent spectral selectivity, and reversible response to optical switch.

  6. Synthesis, microstructural characterization and optical properties of undoped, V and Sc doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Amezaga-Madrid, P.; Antunez-Flores, W.; Ledezma-Sillas, J.E.; Murillo-Ramirez, J.G.; Solis-Canto, O.; Vega-Becerra, O.E.; Martinez-Sanchez, R. [Centro de Investigacion en Materiales Avanzados S.C. and Laboratorio Nacional de Nanotecnologia, Miguel de Cervantes 120, Chihuahua, Chih., C.P. 31109 (Mexico); Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx [Centro de Investigacion en Materiales Avanzados S.C. and Laboratorio Nacional de Nanotecnologia, Miguel de Cervantes 120, Chihuahua, Chih., C.P. 31109 (Mexico)

    2011-06-15

    Research highlights: > Undoped, V and Sc doped ZnO thin films by Aerosol Assisted Chemical Vapour Deposition. > Optimum substrate temperatures of 673 K and 623 K for Sc and V doped films. > Around one third of the dopants in solution were deposited into the films. > Crystallite and grain size decreased with the increase of dopant concentration. > Optical band gap increased from 3.29 to 3.32 eV for undoped to 7 Sc/Zn at. %. - Abstract: Many semiconductor oxides (ZnO, TiO{sub 2}, SnO{sub 2}) when doped with a low percentage of non-magnetic (V, Sc) or magnetic 3d (Co, Mn, Ni, Fe) cation behave ferromagnetically. They have attracted a great deal of interest due to the integration of semiconducting and magnetic properties in a material. ZnO is one of the most promising materials to carry out these tasks in view of the fact that it is optically transparent and has n or p type conductivity. Here, we report the synthesis, microstructural characterization and optical properties of undoped, V and Sc doped zinc oxide thin films. ZnO based thin films with additions of V and Sc were deposited by the Aerosol Assisted Chemical Vapour Deposition method. V and Sc were incorporated separately in the precursor solution. The films were uniform, transparent and non-light scattering. The microstructure of the films was characterized by Grazing Incidence X-ray Diffraction, Scanning Electron Microscopy, and Scanning Probe Microscopy. Average grain size and surface rms roughness were estimated by the measurement of Atomic Force Microscopy. The microstructure of doped ZnO thin films depended on the type and amount of dopant material incorporated. The optical properties were determined from specular reflectance and transmittance spectra. Results were analyzed to determine the optical constant and band gap of the films. An increase in the optical band gap with the content of Sc dopant was obtained.

  7. MOCVD growth of GaN-based materials on ZnO substrates

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shen-Jie; Li, Nola; Park, Eun-Hyun; Kane, Matthew [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 (United States); Feng, Zhe Chuan [Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan 106-17 (China); Valencia, Adriana; Nause, Jeff [CERMET Inc., 1019 Collier Road, Atlanta, Georgia 30318 (United States); Summers, Chris [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 (United States); Ferguson, Ian [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 (United States)

    2008-07-01

    The metalorganic chemical vapor deposition (MOCVD) growth of GaN based materials on ZnO substrates has numerous technical issues that need to be investigated and resolved. These include the thermal stability of ZnO, out-diffusion of Zn/O from the ZnO into the epilayers, and H{sub 2} back etching into the ZnO all of which can cause poor film quality. Cracks and pinholes were seen in the epilayers, leading to the epilayer peeling off. In this study, good quality InGaN films with a wide range of indium incorporation have been grown on (0001) ZnO substrates by MOCVD. No indium droplets and phase separation were observed even at high indium concentrations. The optical microscopy and field-emission scanning electron microscopy revealed a mirror-like InGaN surface with no evidence of indium droplets on the surface. Photoluminescence (PL) showed broad InGaN-related emissions with peak energy lower than the calculated InGaN band gap, possibly due to Zn/O impurities diffused into InGaN from the ZnO substrate. More recently, Al{sub 2}O{sub 3} coated ZnO substrates have been employed for growth to limit Zn diffusion as well as assist epilayer growth. HRXRD result shows that a single crystal InGaN film has been successfully grown on an annealed Al{sub 2}O{sub 3} coated ZnO substrate. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Effects of annealing temperature on ZnO and AZO films prepared by sol-gel technique

    Energy Technology Data Exchange (ETDEWEB)

    Ng, Zi-Neng [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Chan, Kah-Yoong, E-mail: kychan@mmu.edu.my [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Tohsophon, Thanaporn [Physics Department, Faculty of Science, Srinakharinwirot University, 10110 Bangkok (Thailand)

    2012-10-01

    Highlights: Black-Right-Pointing-Pointer Low cost sol-gel spin coating technique was used to fabricate the ZnO films. Black-Right-Pointing-Pointer Influences of annealing temperature on the structural and optical properties of the ZnO and AZO films were investigated. Black-Right-Pointing-Pointer The experimental results reveal that the annealing treatment affects the structural and optical properties of the ZnO films. - Abstract: Zinc oxide (ZnO) films have the potential in the emerging thin-film technologies which can be employed in thin-film solar cells, transistors, sensors and other optoelectronic devices. In this work, low cost sol-gel spin-coating technique was used to synthesize the ZnO films. The influences of annealing temperature on the structural and optical properties of ZnO and aluminum doped ZnO (AZO) films were investigated. The structural properties of the ZnO films such as surface morphology and crystallinity were determined using atomic force microscopy (AFM) and X-ray diffractometry (XRD), respectively. The optical properties of the ZnO films were characterized by the ultraviolet-visible (UV-vis) spectroscopy and Tauc method was adopted to estimate the optical gap. The experimental results reveal that the thermal annealing treatment affects the properties of the ZnO films. The effects of the low range annealing temperature on the sol-gel ZnO films addressed in this investigation will be discussed in this paper.

  9. Appraisal on Textured Grain Growth and Photoconductivity of ZnO Thin Film SILAR

    OpenAIRE

    Deepu Thomas; Sunil C. Vattappalam; Sunny Mathew; Simon Augustine

    2014-01-01

    ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR) method. The textured grain growth along c-axis in pure ZnO thin films and doped with Sn was studied. The structural analysis of the thin films was done by X-ray diffraction and surface morphology by scanning electron microscopy. Textured grain growth of the samples was measured by comparing the peak intensities. Textured grain growth and photo current in ZnO thin films were found to be enhanced by doping with S...

  10. Amorphous grain boundary layers in the ferromagnetic nanograined ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Straumal, B.B., E-mail: straumal@mf.mpg.de [National University of Science and Technology ' Moscow Institute of Steel and Alloys, MISiS' , Leninsky prospect 4, 119991 Moscow (Russian Federation); Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow district, 142432 (Russian Federation); Karlsruher Institut fuer Technologie, Institut fuer Nanotechnologie, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Mazilkin, A.A.; Protasova, S.G. [Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow district, 142432 (Russian Federation); Max-Planck-Institut fuer Intelligente Systeme (former Institut fuer Metallforschung), Heisenbergstrasse 3, 70569 Stuttgart (Germany); Myatiev, A.A. [National University of Science and Technology ' Moscow Institute of Steel and Alloys, MISiS' , Leninsky prospect 4, 119991 Moscow (Russian Federation); Straumal, P.B. [National University of Science and Technology ' Moscow Institute of Steel and Alloys, MISiS' , Leninsky prospect 4, 119991 Moscow (Russian Federation); Institut fuer Materialphysik, Universitaet Muenster, Wilhelm-Klemm-Str. 10, D-48149 Muenster (Germany); Goering, E. [Max-Planck-Institut fuer Intelligente Systeme (former Institut fuer Metallforschung), Heisenbergstrasse 3, 70569 Stuttgart (Germany); and others

    2011-12-01

    Pure ZnO thin films were obtained by the wet chemistry ('liquid ceramics') method from the butanoate precursors. Films consist of dense equiaxial nanograins and reveal ferromagnetic behaviour. The structure of the ZnO films was studied by the high-resolution transmission electron microscopy. The intergranular regions in the nanograined ZnO films obtained by the 'liquid ceramics' method are amorphous. It looks like fine areas of the second amorphous phase which wets (covers) some of the ZnO/ZnO grain boundaries. Most probably these amorphous intergranular regions contain the defects which are responsible for the ferromagnetic behaviour.

  11. IMPROVEMENT OF THE CRYSTALLINITY AND OPTICAL PARAMETERS OF ZnO FILM WITH ALUMINUM DOPING

    OpenAIRE

    Ilican, Saliha

    2016-01-01

    In this study, the undoped and Aluminum (Al) doped (1% and 3%) zinc oxide (ZnO) films were prepared by sol gel method via spin coating onto glass substrates. To investigate the structural and optical properties of the films, it was used to X-ray diffractometer and UV-vis spectrophotometer, respectively. The prepared ZnO films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the (002) plane. The crystalline quality of ZnO film was improved by...

  12. Macroparticles Reduction Using Filter Free Cathodic Vacuum Arc Deposition Method in ZnO Thin Films.

    Science.gov (United States)

    Yuvakkumar, R; Peranantham, P; Nathanael, A Joseph; Nataraj, D; Mangalaraj, D; Hong, Sun Ig

    2015-03-01

    We report a new method to reduce macroparticles in ZnO thin films using filter free cathodic vacuum arc deposition without using any cooling arrangements operated at low arc current. The detailed mechanism has been proposed to reduce macroparticles during thin film deposition. The successful reduction of macroparticles was confirmed employing FESEM-EDX studies. FESEM images of ZnO thin films deposited with cathode spot to substrate distance from 10 to 20 cm revealed that the population of the macroparticles were reduced with the increase of cathode spot to substrate distances at low arc current. The prepared ZnO films were characterised and showed good structural and optical properties.

  13. Physical and Optical Properties of SnO2/ZnO Film Prepared by an RF Magnetron Sputtering Method.

    Science.gov (United States)

    Park, Jooyoung; Lee, Ikjae; Kim, Jaeyong

    2016-03-01

    Al-, Ga-, and In-doped ZnO thin films are widely used in many technical applications, such as in solar cells and on transparent conducting oxides having high optical transmission and low resistivity values. We prepared SnO2-doped ZnO thin films on quartz substrates by using an RF magnetron sputtering method at a substrate temperature of 350 degrees C. The ratio of SnO2 to ZnO was varied from 0 to 5:5 to investigate the effects of Sn on structure and physical properties of ZnO film. The samples were synthesized at a base pressure of 1.3 x 10(-4) Pa with a working pressure of 1.3 Pa and an RF power of 40 W under Ar atmosphere. The results of X-ray diffraction data revealed that pure ZnO films exhibit a strong (002) orientation and a polycrystalline wurzite hexagonal structure. However, as increasing the SnO2 concentration, ZnO transforms to an amorphous phase. The results of the Hall-effect-measurement system revealed that the resistivity values of the films increased as increasing the doping level of SnO2. The AFM data of morphology and microstructure showed that the grain size decreased with increasing SnO2 contents while the total area of grain the boundary increased. The average value of the transmittance of the films in the visible light range was 80-95% and was shifted toward to the shorter wavelengths of the absorption edges with increasing SnO2 contents.

  14. Crystallographic polarity effect of ZnO on thin film growth of pentacene

    Science.gov (United States)

    Nakamura, Tatsuru; Nagata, Takahiro; Hayakawa, Ryoma; Yoshimura, Takeshi; Oh, Seungjun; Hiroshiba, Nobuya; Chikyow, Toyohiro; Fujimura, Norifumi; Wakayama, Yutaka

    2017-04-01

    The spontaneous polarization effect of ZnO on the thin film growth of pentacene, which is a typical π conjunction organic semiconductor, was investigated. Pentacene thin films were grown on polar ZnO surfaces by ultraslow organic film physical vapor deposition to obtain layer-by-layer growth. X-ray diffraction measurements revealed that pentacene molecules stand upright on polar ZnO surfaces, and that the films consist of two polymorphs, namely, the thin-film and bulk phases. The thin-film phases of pentacene were observed regardless of the polarity of the ZnO substrate at a thickness of less than six molecular layers. However, pentacene on a Zn-polar ZnO substrate gradually changed to the bulk phase unlike that on an O-polar ZnO substrate. Kelvin probe force microscopy measurements revealed that the surface potential of pentacene becomes more positive with increasing pentacene thickness at less than two molecular layers. The variation in the potential of pentacene on the Zn-polar ZnO substrate was larger than that of pentacene on the O-polar ZnO substrate. These findings indicate that the polarity of the semiconductor can control the growth and electronic state of the inorganic/organic semiconductor interface.

  15. Optical and Electrical Performance of ZnO Films Textured by Chemical Etching

    Directory of Open Access Journals (Sweden)

    Shiuh-Chuan HER

    2015-11-01

    Full Text Available Zinc oxide (ZnO films were prepared by radio frequency (RF magnetron sputtering on the glass substrate as transparent conductive oxide films. For silicon solar cells, a proper surface texture is essential to introduce light scattering and subsequent light trapping to enhance the current generation. In this study, the magnetron-sputtered ZnO films were textured by wet-chemical etching in diluted hydrochloric acid (HCl for better light scattering. The diffuse transmittance of the surface textured ZnO films was measured to evaluate the light scattering. The influence of hydrochloric acid concentration on the morphology, optical and electrical properties of the surface-textured ZnO film was investigated. The ZnO film etched in 0.05M HCl solution for 30 s exhibited average diffuse transmittance in the visible wavelength range of 9.52 % and good resistivity of 1.10 x 10-3 W×cm while the as-deposited ZnO film had average diffuse transmittance of 0.51 % and relatively high resistivity of 5.84 x 10-2 W×cm. Experimental results illustrated that the optical and electrical performance of ZnO films can be significantly improved by introducing the surface texture through the wet-chemical etching process.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9624

  16. MnO{sub 2}/ZnO porous film: Electrochemical synthesis and enhanced supercapacitor performances

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Xiaoping, E-mail: xpzh2012@126.com; Ma, Lin

    2015-12-31

    MnO{sub 2}/ZnO porous compound film was synthesized by a two-step electrochemical route at room temperature. The structure and surface morphology of the as-prepared MnO{sub 2}/ZnO film were characterized by X-ray diffraction and scanning electron microscopy. The supercapacitive behavior of the as-prepared MnO{sub 2}/ZnO film in aqueous 0.1 M Na{sub 2}SO{sub 4} electrolyte was studied by cyclic voltammetry, charge/discharge cycling and electrochemical impedance spectroscopy. In addition, single MnO{sub 2} film was also synthesized and characterized by the same method for comparison. The SEM results show that the as-prepared MnO{sub 2}/ZnO film exhibits a uniform porous net structure while the single MnO{sub 2} film shows a bulk structure with uneven surface morphology. The electrochemical results indicate that the MnO{sub 2}/ZnO porous film shows good capacitive behavior with a specific capacitance of 570.9 μF cm{sup −2} which is three times larger than that of the single MnO{sub 2} film (179.4 μF cm{sup −2}), which reveals a potential application prospect in electrochemical supercapacitors. - Highlights: • MnO{sub 2}/ZnO porous film was synthesized by an electrochemical route. • The as-prepared MnO{sub 2}/ZnO film showed a uniform porous structure. • The MnO{sub 2}/ZnO porous film showed good capacitive behavior. • The specific capacitance of compound film was three times larger than that of the single MnO{sub 2} film.

  17. Zn/O ratio and oxygen chemical state of nanocrystalline ZnO films grown at different temperatures

    Institute of Scientific and Technical Information of China (English)

    Fan Hai-Bo; Zheng Xin-Liang; Wu Si-Cheng; Liu Zhi-Gang; Yao He-Bao

    2012-01-01

    ZnO nanocrystalline films are prepared on Si substrates at different temperatures by using metal-organic chemical vapour deposition (MOCVD).It is observed that when the growth temperature is low,the stoichiometric ratio between Zn and O atoms has a large deviation from the ideal ratio of 1:1.The ZnO grains in the film have small sizes and are not well crystallized,resulting in a poor photoluminescence (PL) property.When the temperature is increased to an appropriate value,the Zn/O ratio becomes optimized,and most of Zn and O atoms are combined into Zn-O bonds.Then the film has good crystal quality and good PL property.If the temperature is fairly high,the interfacial mutual diffusion of atoms between the substrate and the epitaxial film appears,and the desorption process of the oxygen atoms is enhanced.However,it has no effect on the film property.The film still has the best crystal quality and PL property.

  18. Optoelectronics Devices Based on Zinc Oxide Thin Films and Nanostructures

    OpenAIRE

    Chu, Sheng

    2011-01-01

    Optoelectronics devices based on ZnO thin films and nanostructures are discussed in this dissertation. A ZnO homojunction LED was demonstrated. Sb-doped p-type ZnO and Ga-doped n-type ZnO on Si (100) substrate were used for the LED device. After achieving ohmic contacts on both types of ZnO, the device showed rectifying current-voltage (I-V) characteristics. Under forward bias, the device successfully showed ultraviolet emissions. The emission properties were analyzed and the emission was con...

  19. Study of the surface properties of ZnO nanocolumns used for thin-film solar cells.

    Science.gov (United States)

    Neykova, Neda; Stuchlik, Jiri; Hruska, Karel; Poruba, Ales; Remes, Zdenek; Pop-Georgievski, Ognen

    2017-01-01

    Densely packed ZnO nanocolumns (NCs), perpendicularly oriented to the fused-silica substrates were directly grown under hydrothermal conditions at 90 °C, with a growth rate of around 0.2 μm/h. The morphology of the nanostructures was visualized and analyzed by scanning electron microscopy (SEM). The surface properties of ZnO NCs and the binding state of present elements were investigated before and after different plasma treatments, typically used in plasma-enhanced CVD solar cell deposition processes, by X-ray photoelectron spectroscopy (XPS). Photothermal deflection spectroscopy (PDS) was used to investigate the optical and photoelectrical characteristics of the ZnO NCs, and the changes induced to the absorptance by the plasma treatments. A strong impact of hydrogen plasma treatment on the free-carrier and defect absorption of ZnO NCs has been directly detected in the PDS spectra. Although oxygen plasma treatment was proven to be more efficient in the surface activation of the ZnO NC, the PDS analysis showed that the plasma treatment left the optical and photoelectrical features of the ZnO NCs intact. Thus, it was proven that the selected oxygen plasma treatment can be of great benefit for the development of thin film solar cells based on ZnO NCs.

  20. Study of the surface properties of ZnO nanocolumns used for thin-film solar cells

    Science.gov (United States)

    Stuchlik, Jiri; Hruska, Karel; Poruba, Ales; Remes, Zdenek; Pop-Georgievski, Ognen

    2017-01-01

    Densely packed ZnO nanocolumns (NCs), perpendicularly oriented to the fused-silica substrates were directly grown under hydrothermal conditions at 90 °C, with a growth rate of around 0.2 μm/h. The morphology of the nanostructures was visualized and analyzed by scanning electron microscopy (SEM). The surface properties of ZnO NCs and the binding state of present elements were investigated before and after different plasma treatments, typically used in plasma-enhanced CVD solar cell deposition processes, by X-ray photoelectron spectroscopy (XPS). Photothermal deflection spectroscopy (PDS) was used to investigate the optical and photoelectrical characteristics of the ZnO NCs, and the changes induced to the absorptance by the plasma treatments. A strong impact of hydrogen plasma treatment on the free-carrier and defect absorption of ZnO NCs has been directly detected in the PDS spectra. Although oxygen plasma treatment was proven to be more efficient in the surface activation of the ZnO NC, the PDS analysis showed that the plasma treatment left the optical and photoelectrical features of the ZnO NCs intact. Thus, it was proven that the selected oxygen plasma treatment can be of great benefit for the development of thin film solar cells based on ZnO NCs.

  1. Effective conductivity of chemically deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Robles, M. [Universidad Autonoma del Estado de Morelos (UAEM), Cuernavaca (Mexico). Fac. de Ciencias; Tagueena-Martinez, J. [IIM-UNAM, Temixco, Morelos (Mexico). Lab. de Energia Solar; Del Rio, J.A. [IIM-UNAM, Temixco, Morelos (Mexico). Lab. de Energia Solar

    1997-01-30

    Chemically deposited thin films have multiple applications. However, as a result of their complex structure, their physical properties are very difficult to predict. In this paper, we use an effective medium approach to model these heterogeneous systems. We extend Thorpe`s formula for the effective electrical conductivity of elliptical holes randomly distributed in a matrix to a system composed of conducting ellipses in a conducting matrix. This extension is used to calculate the effective electrical conductivity of polycrystalline chemically deposited ZnO thin films. We compare experimental results obtained by two different deposition methods: spray pyrolysis and successive ion layer adsorption and reaction (SILAR) reported here. We select the elliptical geometric parameters from microstructural data. Good agreement between the experimental measurements and our calculation is obtained. In addition, we present a new proof of the reciprocity theorem used to derive the theoretical relation. (orig.)

  2. Piezoelectric film electro-deposition for optical fiber sensor with ZnO coating

    Institute of Scientific and Technical Information of China (English)

    Li Zhou; Ping Gu; Ya Zhou

    2008-01-01

    The piezoelectric film electro-deposition for optical fiber sensor with ZnO coating is studied. The zinc oxide plating film is made on the copper surface directly by cathodic electro-deposition in the Zn(NO3)2 single salt aqueous solution systems. The influences of main experimental conditions on the properties of ZnO thin film in the electro-deposition processes are analyzed and a stable, practical and economic technique is obtained.

  3. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    Science.gov (United States)

    Shafura, A. K.; Sin, N. D. Md.; Azhar, N. E. I.; Saurdi, I.; Uzer, M.; Mamat, M. H.; Shuhaimi, A.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-07-01

    CH4 gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10-3 S/cm and 11.5%, respectively.

  4. Enhanced Gas Sensing Properties of Spin-coated Na-doped ZnO Nanostructured Films

    Science.gov (United States)

    Basyooni, Mohamed A.; Shaban, Mohamed; El Sayed, Adel M.

    2017-01-01

    In this report, the structures, morphologies, optical, electrical and gas sensing properties of ZnO and ZnO: Na spin-coated films are studied. X-ray diffraction (XRD) results reveal that the films are of a single phase wurtzite ZnO with a preferential orientation along (002) direction parallel to c-axis. Na doping reduces the crystalline quality of the films. The plane surface of ZnO film turned to be wrinkle net-work structure after doping. The reflectance and the optical band gap of the ZnO film decreased after Na doping. The wrinkle net-work nanostructured Na-doped film shows an unusually sensitivity, 81.9% @ 50 sccm, for CO2 gas at room temperature compared to 1.0% for the pure ZnO film. The signals to noise ratio (SNR) and detection limit of Na-doped ZnO sensor are 0.24 and 0.42 sccm, respectively. These enhanced sensing properties are ascribed to high surface-to-volume ratio, hoping effect, and the increase of O- vacancies density according to Kroger VinK effect. The response time increased from 179 to 240 s by the incorporation of Na atoms @50 sccm. This response time increased as the CO2 concentration increased. The recovery time is increased from 122 to 472 s by the incorporation of Na atoms @50 sccm. PMID:28145506

  5. Photocatalytic activity of ZnO films with micro-grid structure

    Institute of Scientific and Technical Information of China (English)

    Chunzhi LI; Wenwen WANG; Junying ZHANG; Hailing ZHU; Weiwei ZHANG; Tianmin WANG

    2009-01-01

    A layer of zinc oxide (ZnO) micro-grid was deposited on the surface of ZnO film using the DC reactive magnetron sputtering method and the micro-sphere lithography technique on glass substrates. Samples of this layer were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM), atomic force micro-scopy (AFM), and ultraviolet-visible light spectroscopy.X-ray diffraction showed the high crystallinity of ZnO film and the regular arrangement of the micro-grid. The micro-grid ZnO has a lower specular reflection and a higher diffuse reflection, allowing incident light to reflect two or three times to enhance the usage of light. Photocatalytic degradation experiments on methylene blue using both ZnO micro-grid and ordinary film showed that the ZnO micro-grid has better photocatalytic properties than ordinary film. The ZnO micro-grid enhanced the photo-catalytic efficiency of ZnO film by 28% with a degradation time of 300 min.

  6. A nano-structured ZnO film as diagnostic X-ray sensor

    Energy Technology Data Exchange (ETDEWEB)

    Valenca, Claudia Patricia Varela; Liborio da Silveira, Matheus Augusto; Macedo, Marcelo Andrade; Pereira dos Santos, Luiz Antonio [CNEN/CRCN-NE Av. Prof. Luiz Freire, 1 Cidade Universitaria RECIFE-PE CEP 50740-540 (Brazil)

    2015-07-01

    Currently some international organizations such as WHO and IAEA have shown concerns about the quality of diagnostic services in clinics and hospitals that use ionizing radiation. In fact, the IAEA recommend that the characteristics of the X-ray beam must be adjusted to obtain the highest quality of the radiographic image with the minimum exposure to the patient. Several types of detectors may be used for monitoring X-ray beams, such as: ionization chamber, photodiode, phototransistor, among others. Recently nano-structured films made of various types of metal oxide materials have been used for various technological applications. Accordingly, the purpose of this paper is to present a sort of device based on a nano-structured zinc oxide (ZnO) to operate as a diagnostic X-ray sensor. By depositing a thin film on the glass substrate some ZnO semiconductor samples were built by sputtering techniques and then mounted in a BNC type connector to perform the electrical characterization. To test the device, we choose a standard X-Ray beam, the RQR9 radiation quality, which is normally used as the tool and condition for calibrating diagnostic X-Ray instruments in the energy range of computed tomography, in accordance with the stated requirements of IEC 61267. A 6430 sub-femto-ammeter, Keithley, was used as electrometer to perform the output readings and simultaneously bias the ZnO sensor. Analysis of the angular dependence and the dose rate were performed to evaluate how the device responds under the RQR9 radiation spectra. Although the results have shown that the ZnO film presents a certain angular dependence, if an angle of incidence of photons is selected, the device displays reproducibility as X-ray sensor and has the feature of radiation hardness unlike other types of semiconductor electronic devices typically used as an X-ray detector. (authors)

  7. Thickness dependency of sol-gel derived ZnO thin films on gas sensing behaviors

    Energy Technology Data Exchange (ETDEWEB)

    Kakati, Nitul; Jee, Seung Hyun; Kim, Su Hyun; Oh, Jun Young; Yoon, Young Soo, E-mail: yoonys@yonsei.ac.k

    2010-10-29

    ZnO thin films were fabricated by a sol-gel method using Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O as starting material in order to prepare an acetone gas sensor. A homogeneous and stable solution was prepared by dissolving the zinc acetate in a solution of ethanol and monoethanolamine. The sol-gel solution is coated on alumina substrates with various thicknesses by spin coating technique and heat treated to grow crystalline ZnO thin films. The effect of thickness on physical and electrical properties of as deposited ZnO thin films has been studied. The as deposited ZnO thin films were characterized by X-ray diffraction spectroscopy, field emission scanning electron microscopy and atomic force microscopy. The root mean square surface roughness factors increase with thickness of the films and found 3.9, 6.6, 9.0, and 11.28 nm for 80-, 220-, 450- and 620-nm-thin films respectively. The activation energies of the films are calculated from the resistance temperature characteristics. The sensitivities of the ZnO films towards the acetone gas were determined at an operating temperature of 200 {sup o}C. The sensitivity towards acetone vapor is strongly depending on surface morphology of the ZnO thin films.

  8. Magnetic properties of high Li doped ZnO sol–gel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vettumperumal, R. [P.G and Research Department of Physics, Sri Paramakalyani College, Alwarkurichi (India); Kalyanaraman, S., E-mail: mayura_priya2003@yahoo.co.in [P.G and Research Department of Physics, Sri Paramakalyani College, Alwarkurichi (India); Santoshkumar, B. [P.G and Research Department of Physics, Sri Paramakalyani College, Alwarkurichi (India); Thangavel, R. [Department of Physics, Indian School of Mines, Dhanbad (India)

    2014-02-01

    Highlights: • Ferromagnetism in high Li doped ZnO films. • Magnetic properties observed by Guoy's and VSM method. • The rod and wrinkle like structures are observed from the surface of the films. • Band gap of ZnO does not get altered by high Li doping. - Abstract: Undoped and Li doped ZnO thin films were deposited on a glass substrate using the sol–gel dip coating method. The films were prepared at 5 mol.% and 10 mol.% of Li doped ZnO at 550 °C annealing temperature and the deposited films were characterized by X-ray diffraction (XRD), microscopic studies, Gouy's method, vibrating sample magnetometer (VSM) and UV–visible spectroscopy. All the deposited thin films had a hexagonal wurtzite structure with polycrystalline grains at random. Primarily magnetic properties of pure and Li doped ZnO films were observed by Guoy's method which depicted Dia and Para magnetic behavior at room temperature. VSM measurement reveals a coercivity of 97.7 Oe in the films. An inverse relative ferromagnetism was perceived in Li doped ZnO films which had an average transmission of <90%.

  9. Effect of annealing in hydrogen atmosphere on ZnO films for field emission display

    Science.gov (United States)

    Zulkifli, Zurita; Sharma, Subash; Shinde, Sachin; Kalita, Golap; Tanemura, M.

    2015-11-01

    Surface morphology, crystallinity, conductivity and optical transmittance of ZnO films can be modified by annealing process. Hydrogen is one of the popular annealing gases as well as nitrogen, argon, oxygen and air which are commonly used for thin film cleaning or the removal of native oxide. In general, annealing is done at high temperatures (> 600degC) to improve the film properties. From a view point of environment, however, lower annealing temperature is preferable. In this work, low annealing process was challenged to understand the effect of annealing temperature on properties of ZnO thin films and nanostructured film grown on glass substrates for transparent field emission device applications. The annealing temperature employed was 100, 200 and 450°C at 100 sccm hydrogen flow rate. ZnO thin films were deposited by RF magnetron sputtering. The ZnO thin films were characterized by X-ray diffraction analysis (XRD), Atomic Force Microscopy (AFM), UV-VIS and Raman spectroscopy. The sheet resistances reduced about 15 kohm/sq at low annealing temperature. By contrast, the optical transmittance did not show any significant changes after annealing. The FE current density increased after the ZnO nanostructures film was annealed in 100°C. The results obtained could motivate a surface treatment for flexible ZnO thin film since the substrate is always suffered by heat.

  10. Insight of dipole surface plasmon mediated optoelectronic property tuning of ZnO thin films using Au

    Science.gov (United States)

    Dixit, Tejendra; Shukla, Mayoorika; Palani, I. A.; Singh, Vipul

    2016-12-01

    Surface plasmon mediated photoluminescence (PL) studies of ZnO, ZnO/Au, ZnO/Au/ZnO and Au/ZnO films have been investigated. An enhancement of UV and visible light emission has been observed in ZnO/Au and ZnO/Au/ZnO films, compared to that of ZnO thin films, while for Au/ZnO films quenching of PL intensity was observed. Excitation intensity (EI) dependent PL spectra have shown dominance of horizontal dipole surface plasmon mode for ZnO/Au/ZnO, ZnO/Au samples, which led enhanced greenish-yellow and orange emissions respectively. Moreover, confocal laser scanning microscope measurements and diffuse reflectance spectroscopy were conducted to investigate the mechanism behind the variations and involvement of Urbach tail. UV and visible region absorption were selectively enhanced by varying the Au and ZnO configuration and can be assigned to the interaction of the dipole surface plasmon resonance with localized trapping levels and phonon subsystem. The excellent photoluminescence performance has immense potential for ZnO thin film based optoelectronic devices.

  11. Structural defects and photoluminescence studies of sol-gel prepared ZnO and Al-doped ZnO films

    Science.gov (United States)

    Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2016-11-01

    ZnO and Al-doped ZnO (AZO) films were synthesized using sol-gel spin-coating method. The powder XRD analysis revealed the stress relaxation mechanism upon Al doping in ZnO film. The reduction in the imaginary part of the dielectric constant and suppression of deep level acceptor type octahedral oxygen interstitial defects account for the reduction in carrier concentration in AZO with respect to ZnO. Electrical conductivity measurements and grain boundary conduction model are used to quantify the carrier concentration. From the Commission Internationale d'Eclairge diagram of ZnO and AZO, color parameters like dominant wavelength, color purity and luminosity are determined and reported for the first time. The prepared ZnO and AZO films show considerable blue emission. These films can be used for white light generation.

  12. Long-Wavelength Infrared Surface Plasmons on Ga-Doped ZnO Films Excited via 2D Hole Arrays for Extraordinary Optical Transmission (Preprint)

    Science.gov (United States)

    2013-10-01

    AFRL-RY-WP-TP-2013-0180 LONG-WAVELENGTH INFRARED SURFACE PLASMONS ON Ga- DOPED ZnO FILMS EXCITED VIA 2D HOLE ARRAYS FOR EXTRAORDINARY OPTICAL...TITLE AND SUBTITLE LONG-WAVELENGTH INFRARED SURFACE PLASMONS ON Ga- DOPED ZnO FILMS EXCITED VIA 2D HOLE ARRAYS FOR EXTRAORDINARY OPTICAL TRANSMISSION...structure size such as period. Pulse laser deposited Ga- doped ZnO has been shown to have fluctuations in optical and electrical parameters based on

  13. Stress Analysis of ZnO Film with a GaN Buffer Layer on Sapphire Substrate

    Institute of Scientific and Technical Information of China (English)

    CUI Jun-Peng; WANG Xiao-Feng; DUAN Yao; HE Jin-Xiao; ZENG Yi-Ping

    2008-01-01

    A 5.35-μm-thick ZnO film is grown by chemical vapour deposition technique on a sapphire (0001) substrate with a GaN buffer layer. The surface of the ZnO film is smooth and shows many hexagonal features. The full width at half maximum of ZnO (0002) w-rocking curve is 161 arcsec, corresponding to a high crystal quality of the ZnO film. From the result of x-ray diffraction θ - 2θ scanning, the stress status in ZnO film is tensile, which is supported by Raman scattering measurement. The reason of the tensile stress in the ZnO film is analysed in detail. The lattice mismatch and thermal mismatch are excluded and the reason is attributed to the coalescence of grains or islands during the growth of the ZnO film.

  14. Nanoscaled ZnO films used as enhanced substrates for fluorescence detection of dyes

    Institute of Scientific and Technical Information of China (English)

    Liu Yan-Song; Yi Fu; Ramachandram Badugu; Joseph R.Lakowicz; Xu Xiao-Liang

    2012-01-01

    The ability of nanoscaled ZnO films to enhance fluorescence was studied.We found that the fluorescence intensities of Cy5,rhodamine 6G,and fluorescein can be enhanced about 10-fold on nanoscaled ZnO films as compared to that on glass substrates.The lifetimes of all samples were measured,and no obvious change in lifetime was observed for dyes on different substrates.The mechanism for the nanoscaled ZnO film enhanced fluorescence appears to be different from that for the metal-fluorophore systems.

  15. Electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pagni, O. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Somhlahlo, N.N. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Weichsel, C. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)]. E-mail: andrew.leitch@nmmu.ac.za

    2006-04-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies.

  16. Growth of ZnO thin films on GaAs by pulsed laser deposition

    OpenAIRE

    Craciun, V.; Elders, J.; Gardeniers, J.G.E.; Geretovsky, J.; Boyd, Ian W.

    1995-01-01

    ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full width at half maximum value of the (002) X-ray diffraction line of less than 0.13 ° have been grown on such buffer layers at a substrate temperature of only 350 °C.

  17. Influence of solution viscosity on hydrothermally grown ZnO thin films for DSSC applications

    Science.gov (United States)

    Marimuthu, T.; Anandhan, N.; Thangamuthu, R.; Surya, S.

    2016-10-01

    Zinc oxide (ZnO) nanowire arrays (NWAs) were grown onto zinc oxide-titanium dioxide (ZnO-TiO2) seeded fluorine doped tin oxide (FTO) conductive substrate by hydrothermal technique. X-ray diffraction (XRD) patterns depict that ZnO thin films are preferentially oriented along the (002) plane with hexagonal wurtzite structure. Viscosity measurements reveal that viscosity of the solutions linearly increases as the concentrations of the polyvinyl alcohol (PVA) increase in the growth solution. Field emission scanning electron microscope (FE-SEM) images show that the NWAs are vertically grown to seeded FTO substrate with hexagonal structure, and the growth of NWAs decreases as the concentration of the PVA increases. Stylus profilometer and atomic force microscopic (AFM) studies predict that the thickness and roughness of the films decrease with increasing the PVA concentrations. The NWAs prepared at 0.1% of PVA exhibits a lower transmittance and higher absorbance than that of the other films. The band gap of the optimized films prepared at 0.0 and 0.1% of PVA is found to be 3.270 and 3.268 eV, respectively. The photo to current conversion efficiency of the DSSC based on photoanodes prepared at 0.0 and 0.1% of PVA exhibits about 0.64 and 0.82%, respectively. Electrochemical impedance spectra reveal that the DSSC based on photoanode prepared at 0.1% of PVA has the highest charge transfer recombination resistance.

  18. Effect of silver growth temperature on the contacts between Ag and ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures,200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts between Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150 ℃ and 200℃. Ohmic contacts were formed while the growth temperatures were lower than 150℃ or higher than 200 ℃. After analysis,the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers.

  19. Oriented grain growth in ZnO thin films by Iodine doping

    Science.gov (United States)

    Thomas, Deepu; Vattappalam, Sunil C.; Mathew, Sunny; Augustine, Simon

    2015-02-01

    ZnO thin films were prepared by Successive Ionic Layer Adsorption Reaction (SILAR) method. Oriented grain growth in Iodine doped ZnO thin films were studied. The oriented grain growth in samples was studied by comparing the peak intensities from X-ray diffraction data and surface morphology by scanning electron microscopy. It is found that oriented grain growth significantly enhanced by Iodine doping. When the oriented grain growth increases, crystallinity of the thin film improves, resistance and band gap decrease. ZnO thin films having good crystallinity with preferential (002) orientation is a prerequisite for the fabrication of devices like UV diode lasers, acoustic- optic devices etc. A possible mechanism for the oriented grain growth is also investigated. It is inferred that creation of point defects is responsible for the enhanced oriented grain growth in ZnO thin films when doped with iodine.

  20. Effect of silver growth temperature on the contacts between Ag and ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    LI XinKun; LI QingShan; LIANG DeChun; XU YanDong; XIE XiaoJun

    2009-01-01

    Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures, 200 nm silver films as the contact metal were depos-ited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts be-tween Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150℃ and 200℃. Ohmic contacts were formed while the growth temperatures were lower than 150℃ or higher than 200℃. After analysis, the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers.

  1. Microwave annealing effects on ZnO films deposited by atomic layer deposition

    Institute of Scientific and Technical Information of China (English)

    Zhao Shirui; Dong Yabin; Yu Mingyan; Guo Xiaolong; Xu Xinwei; Jing Yupeng; Xia Yang

    2014-01-01

    Zinc oxide thin films deposited on glass substrate at 150 ℃ by atomic layer deposition were annealed by the microwave method at temperatures below 500 ℃.The microwave annealing effects on the structural and luminescent properties of ZnO films have been investigated by X-ray diffraction and photoluminescence.The results show that the MWA process can increase the crystal quality of ZnO thin films with a lower annealing temperature than RTA and relatively decrease the green luminescence of ZnO films.The observed changes have demonstrated that MWA is a viable technique for improving the crystalline quality of ZnO thin film on glass.

  2. Morphological, physical, antimicrobial and release properties of ZnO nanoparticles-loaded bacterial cellulose films.

    Science.gov (United States)

    Shahmohammadi Jebel, Fereshteh; Almasi, Hadi

    2016-09-20

    Bacterial cellulose (BC) monolayer and multilayer films, incorporating 5wt.% ZnO nanoparticles (NPs) have been obtained. Ultrasound (US) irradiation (40kHz) was applied during ZnO-BC nanocomposites preparation. X-ray diffraction (XRD) patterns showed that ZnO NPs were crystallized in their pure phase. SEM scanning electron microscopy (SEM) results indicated that US treatment causes to decrease ZnO particle size, forming a stable hybrid nanostructure and evenly distributed ZnO NPs coated BC nanofibers. ZnO NPs enhanced the mechanical properties and diminished water vapor permeability and moisture absorption of BC films. Antibacterial activity of ZnO-BC films against Staphylococcus aureus was more than Escherichia coli. The antibacterial activity was enhanced with the utilization of US irradiation. The ZnO release was influenced by films composition; the multilayer and US treated films being promising in order to achieve controlled release of ZnO. Results suggest that ZnO-BC films may be used as controlled release antimicrobial food active packaging.

  3. Formation of p-type ZnO thin film through co-implantation

    Science.gov (United States)

    Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

    2017-01-01

    We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

  4. Internal stress induced natural self-chemisorption of ZnO nanostructured films

    Science.gov (United States)

    Chi, Po-Wei; Su, Chih-Wei; Wei, Da-Hua

    2017-01-01

    The energetic particles bombardment can produce large internal stress in the zinc oxide (ZnO) thin film, and it can be used to intentionally modify the surface characteristics of ZnO films. In this article, we observed that the internal stress increased from −1.62 GPa to −0.33 GPa, and the naturally wettability of the textured ZnO nanostructured films changed from hydrophobicity to hydrophilicity. According to analysis of surface chemical states, the naturally controllable wetting behavior can be attributed to hydrocarbon adsorbates on the nanostructured film surface, which is caused by tunable internal stress. On the other hand, the interfacial water molecules near the surface of ZnO nanostructured films have been identified as hydrophobic hydrogen structure by Fourier transform infrared/attenuated total reflection. Moreover, a remarkable near-band-edge emission peak shifting also can be observed in PL spectra due to the transition of internal stress state. Furthermore, our present ZnO nanostructured films also exhibited excellent transparency over 80% with a wise surface wetting switched from hydrophobic to hydrophilic states after exposing in ultraviolet (UV) surroundings. Our work demonstrated that the internal stress of the thin film not only induced natural wettability transition of ZnO nanostructured films, but also in turn affected the surface properties such as surface chemisorption. PMID:28233827

  5. ZnO Coated Nanospring-Based Gas Sensors

    Science.gov (United States)

    Bakharev, Pavel Viktorovich

    . The experimental and computational analyses of the sensing properties of the 3-D (nanospring-based) and flat thin films structures show that the complexity and periodic boundary conditions of the nanospring-based devices result in a lower detection limit, while flat thin films exhibit higher sensitivity to small analyte concentration fluctuations. Our analysis shows that the productive approach to fabrication of integrated sensors (electronic noses) is to use both the structures (3D and flat geometries) as the receptors for a prompt and reliable detection and recognition of the target chemical compounds. Analog lock-in amplifier (LIA) AC measurements of the electrical response have been performed to significantly improve the signal-to-noise ratio (SNR) and reduce the detection limit of the single ZnO coated nanospring chemiresistor from the ppm to the ppb analyte concentration ranges. The LIA-based sensor signal recognition technique has shown to extend the capabilities of the gas sensor array for a linear discrimination analysis (LDA), an independent component analysis (ICA), a principal component analysis (PCA) and other multiple odor recognition methods.

  6. Nanoporous characteristics of sol-gel-derived ZnO thin film

    Institute of Scientific and Technical Information of China (English)

    Anees A. Ansari; M. A. M. Khan; M. Alhoshan; S. A. Alrokayan; M. S. Alsalhi

    2012-01-01

    Sol-gel-derived nanoporous ZnO film has been successfully deposited on glass substrate at 200 ℃ and subsequently annealed at different temperatures of 300,400 and 600 ℃.Atomic force micrographs demonstrated that the film was crack-free,and that granular nanoparticles were homogenously distributed on the film surface.The average grain size of the nanoparticles and RMS roughness of the scanned surface area was 10 nm and 13.6nm,respectively,which is due to the high porosity of the film.Photoluminescence (PL) spectra of the nanoporous ZnO film at room temperature show a diffused band,which might be due to an increased amount of oxygen vacancies on the lattice surface.The observed results of the nanoporous ZnO film indicates a promising applicationin the development of electrochemical biosensors due to the porosity of film enhancing the higher loading of biomacromolecules (enzyme and proteins).

  7. Simple way for preparation of ZnO films by surfactant mediated spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Stambolova, Irina; Blaskov, Vladimir; Shipochka, Maria [Institute of General and Inorganic Chemistry, BAS, Acad. G. Bonchev St., bl.11, 1113 Sofia (Bulgaria); Vassilev, Sasho [Institute of Electrochemistry and Energy Systems, BAS, Acad. G. Bonchev St., bl.10, 1113 Sofia (Bulgaria); Petkova, Vilma [Institute of Mineralogy and Crystallography ' Acad. Ivan Kostov' , BAS, Acad. G. Bonchev St., bl.107, 1113 Sofia (Bulgaria); Loukanov, Alexandre, E-mail: alexandre_loukanov@abv.bg [Laboratory of Engineering NanoBiotechnology, Department of Engineering Geoecology, University of Mining and Geology ' St. Ivan Rilski' , Sofia 1700 (Bulgaria)

    2012-08-01

    Highlights: Black-Right-Pointing-Pointer ZnO was prepared by surfactant mediated spray pyrolysis. Black-Right-Pointing-Pointer The film surface morphology can be enhanced by PVA addition. Black-Right-Pointing-Pointer The PVA improves significant the photocatalytic activity of ZnO. Black-Right-Pointing-Pointer The zinc acetate precursor is preferred for film preparation than nitrate one. - Abstract: Nanocrystalline porous ZnO films are deposited onto alumina foil substrates by polyvinyl alcohol (PVA) modified spray pyrolysis. Water and ethanol-water mixture were used for preparation of the sols. The effect of polyvinyl alcohol on the morphological and photocatalytical properties of ZnO films was studied. It was found that the polyvinyl alcohol plays important role in formation of porous films structure with ganglia like morphology. Relatively compact granular morphology was observed for the ZnO samples, grown without organic surfactant. The X-ray diffraction patterns revealed the formation of phase-pure ZnO thin films. The FTIR spectra and DTA-TG analyses of the precursor mixtures: Zn(CH{sub 3}COOH){sub 2}{center_dot}2H{sub 2}O and Zn(NO{sub 3}){sub 2}{center_dot}6H{sub 2}0 with PVA revealed that ZnO is formed before the final decomposition of the polymer at 350 Degree-Sign C. It was observed that both: the acetate precursor and the organic surfactant could enhance significantly the photocatalytic properties of the ZnO films. The films obtained from sols, containing PVA showed better photocatalytic decolorization of Malachite Green dye, than the films, deposited from unmodified sols.

  8. Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser Deposition

    Science.gov (United States)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, Sandor L.; George, M. A.

    2000-01-01

    The properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.

  9. Synthesis and properties of Ag-doped ZnO films with room temperature ferromagnetism

    Science.gov (United States)

    Xu, Qin; Wang, Zhi-Jun; Chang, Ze-Jiang; Liu, Jing-Jin; Ren, Ya-Xuan; Sun, Hui-Yuan

    2016-12-01

    A series of Ag-doped ZnO films were prepared by DC magnetron sputtering. XRD and SEM results showed that the doping amount of Ag had a great influence on the films' morphology and ferromagnetism, and their magnetism can be improved by doping an appropriate amount of Ag. The theoretical analysis suggested that the magnetism resulted mainly from the film grain boundary surfaces. Further research revealed that these films had strong timeliness. Such a result indicated that the room temperature ferromagnetism of Ag-doped ZnO films did not stem from the cation vacancies but from the oxygen vacancies on the boundary surfaces.

  10. Controlled morphologies and optical properties of ZnO films and their photocatalytic activities

    Energy Technology Data Exchange (ETDEWEB)

    Duan Jingjing [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China); Liu Xiaoheng, E-mail: xhliu@mail.njust.edu.cn [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China); Han Qiaofeng [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China); Wang Xin, E-mail: wangx@mail.njust.edu.cn [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China)

    2011-09-15

    Highlights: > Gelatin acts as a capping reagent in the morphology synthesis of ZnO films. > The microstructures of ZnO films are hexagonal prisms, plates and rose-like crystals. > The hexagonal prisms and rose-like films exhibit excellent photocatalytic activities. - Abstract: ZnO films with three different microstructures including hexagonal prisms, plates and rose-like twinned crystals were fabricated using chemical bath deposition with different concentration of gelatin. The growth mechanisms of ZnO films were discussed, and the gelatin played a vital role as a polyelectrolyte capping the formation of microstructures. The photoluminescence and Raman properties were found sensitive to the crystal morphologies of ZnO films. Significantly, the photodegradation efficiencies of methylene blue under UV light irradiation in the presence of ZnO films consisted of hexagonal prisms and rose-like twinned crystals were 95% and 96%, respectively. The excellent photocatalytic activities can be ascribed to the high oxygen vacancies concentration and high percentage of polar planes, and this result was important in addressing the origin of high photocatalytic activity.

  11. Polarity Effects of Substrate Surface in Epitaxial ZnO Film Growth

    Science.gov (United States)

    Zhu, Shen; Su, C.-H.; Lehoczky, S. L.; Harris, M. T.; Callahan, M. J.; George, M. A.; McCarty, P.

    1999-01-01

    Epitaxial ZnO films were grown on the two polar surfaces (0-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. As a comparison, films are also deposited on the (000 I) Al203 substrates. It is found that the two polar surfaces have different photoluminescence (PL) spectrum, surface structure and morphology, which are strongly inference the epitaxial film growth. The morphology and structure of epitaxial films on the ZnO substrates are different from the film on the Al203 substrates. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite Surface. The measurements of PL, low-angle incident x-ray diffraction, and atomic force microscopy of ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth using reactive sputtering deposition.

  12. Synthesis, structural and optical characterization of undoped, N-doped ZnO and co-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pathak, Trilok Kumar, E-mail: tpathak01@gmail.com; Kumar, R.; Purohit, L. P., E-mail: proflppurohitphys@gmail.com [Semiconductor Research Lab., Department of Physics, Gurukula Kangri University, Haridwar (India)

    2015-05-15

    ZnO, N-doped ZnO and Al-N co-doped ZnO thin films were deposited on ITO coated corning glass by spin coater using sol-gel method. The films were annealed in air at 450°C for one hour. The crystallographic structure and morphology of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively. The X-ray diffraction results confirm that the thin films are of wurtzite hexagonal with a very small distortion. The optical properties were investigated by transmission spectra of different films using spectrophotometer (Shimadzu UV-VIS-NIR 3600). The results indicate that the N doped ZnO thin films have obviously enhanced transmittance in visible region. Moreover, the thickness of the films has strong influences on the optical constants.

  13. Optical characterization of ZnO thin films deposited by RF magnetron sputtering method

    Institute of Scientific and Technical Information of China (English)

    TANG Ning; WANG JinLiang; XU HengXing; PENG HongYong; FAN Chao

    2009-01-01

    This study investigated the process parameter effects on the structural and optical properties of ZnO thin film using radio frequency(RF)magnetron sputtering on amorphous glass substrates.The process parameters included RF power and working pressure.Results show that RF power was increased to promote the crystalline quality and decrease ZnO thin film defects.However,when the working pressure was increased to 3 Pa the ZnO thin film crystalline quality became worse.At a 200 W RF power and 1 Pa working pressure,the ZnO thin film with an optical band gap energy of 3.225 eV was obtained.

  14. Annealing temperature dependency of ZnO thin films memristive behavior

    Science.gov (United States)

    Shaari, N. A. A.; Kasim, S. M. M.; Rusop, M.; Herman, S. H.

    2016-07-01

    The work focuses on the effect of different annealing temperature on the ZnO-based memristive device. Zinc oxide was deposited on the ITO substrate by sol-gel spincoating technique. The deposited ZnO thin films were then annealed from 50°C to 450°C in a furnace for 60 minutes each. The electrodes Platinum (Pt) were sputtered by using JEOL JFC-1600 Auto Fine Coater. The thin film thicknesses were measured by Veeco Dektak 150 Surface Profiler. The thickness of the thin film annealed at 350°C is the thinnest, which is 54.78nm and from the electrical characterization it also shown the switching characteristic behavior. The surface morphology and topology to examine the existence of nanoparticles

  15. Synthesis of Imine-Bearing ZnO Nanoparticle Thin Films and Characterization of Their Structural, Morphological and Optical Properties.

    Science.gov (United States)

    Kaur, Narinder; Sharma, Sanjeev K; Kim, Deuk Young; Sharma, Hemant; Singh, Narinder

    2015-10-01

    We are presenting the first report on the fabrication of imine-bearing ZnO nanoparticle thin films grown on Corning glass by spin coating. The sol was prepared by dissolving imine-bearing ZnO nanoparticles in dimethylsulfoxide (DMSO). The thickness of the films was manipulated to be 125-200 nm. The X-ray diffraction (XRD) analysis showed hexagonal wurtzite structure of imine-bearing ZnO nanoparticles thin films with a (002) preferential orientation. The stretching of chemical bonds of the imine linkage and Zn-O in imine-bearing ZnO nanoparticle thin films was confirmed by Fourier transform infrared spectroscopy (FTIR). The grain size of the films increased with increasing the thickness of the films due to the number of coatings and subsequently dried at 200 °C. The transmittance of imine-bearing ZnO nanoparticle thin films was observed to be ≥94%, which was in close agreement to pure ZnO thin films in the visible region. The bandgap of imine-bearing ZnO nanoparticle thin films (3.04 eV), evaluated from Tauc's plot, was observed to be lower than that of pure ZnO (3.21 eV), which is attributed to the interaction of the ZnO nanoparticles with the imine receptor.

  16. Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

    Institute of Scientific and Technical Information of China (English)

    LI Shao-Juan; HE Xin; HAN De-Dong; SUN Lei; WANG Yi; HAN Ru-Qi; CHAN Man-Sun; ZHANG Sheng-Dong

    2012-01-01

    The structural and electrical properties of ZnO 61ms deposited by reactive radiofrequency sputtering with a metallic zinc target are systematically investigated. While the as-deposited ZnO film is in a poly-crystalline structure when the partial pressure of oxygen (pO2) is low, the grain size abruptly decreases to a few nanometers as pO2 increases to a criticaJ vaiue, and then becomes almost unchanged with a further increase in pO2.In addition, the resistivity of the ZnO films shows a non-monotonic dependence on pO2, including an abrupt transition of about seven orders of magnitude at the critical pO2. Thin-film transistors (TFTs) with the nanocrystalline ZnO films as channel layers have an on/off current ratio of more than 107, an off-current in the order of pA, a threshold voltage of about 4.5 V, and a carrier mobility of about 2cm2/(V-s). The results show that radiofrequency sputtered ZnO with a zinc target is a promising candidate for high-performance ZnO TFTs.%The structural and electrical properties of ZnO films deposited by reactive radiofrequency sputtering with a metallic zinc target are systematically investigated.While the as-deposited ZnO film is in a poly-crystalline structure when the partial pressure of oxygen (pO2 ) is low,the grain size abruptly decreases to a few nanometers as pO2 increases to a critical value,and then becomes almost unchanged with a further increase in pO2.In addition,the resistivity of the ZnO films shows a non-monotonic dependence on pO2,including an abrupt transition of about seven orders of magnitude at the critical pO2.Thin-film transistors (TFTs) with the nanocrystalline ZnO films as channel layers have an on/off current ratio of more than 10 7,an off-current in the order of pA,a threshold voltage of about 4.5 V,and a carrier mobility of about 2 cm2/(V.s).The results show that radiofrequency sputtered ZnO with a zinc target is a promising candidate for high-performance ZnO TFTs.

  17. Structure and UV photoluminescence of nanocrystalline ZnO films prepared by thermal oxidation of ZnS films

    Energy Technology Data Exchange (ETDEWEB)

    Gao, X.D. [State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics of Chinese Academy of Sciences, Dingxi Road, No. 1295, Shanghai 200050 (China)]. E-mail: xdgao@mail.sic.ac.cn; Li, X.M. [State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics of Chinese Academy of Sciences, Dingxi Road, No. 1295, Shanghai 200050 (China); Yu, W.D. [State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics of Chinese Academy of Sciences, Dingxi Road, No. 1295, Shanghai 200050 (China)

    2004-11-15

    Nanocrystalline ZnO films were fabricated using thermal oxidation of ZnS films deposited by successive ionic layer adsorption and reaction (SILAR) method. The crystalline structure and morphology of obtained films were characterized by X-ray diffraction (XRD) and scanning electronic microscope (SEM). Optical properties including the optical absorption coefficient and photoluminescence were investigated. Results show that obtained ZnO film exhibits excellent crystalline structure with the preferential orientation of <1 0 0>, dense morphology with particle size of 20-50 nm, high transmittance over 80% in vis-near-infrared band, and sharp absorption edge near 380 nm. At the excitation of 340 nm photon, the film shows a strong and sharp ultraviolet emission at 390 nm and several weak emissions in blue band, illustrating its high optical quality. The oxygen content in the annealing atmosphere has significant effects on the structure and optical properties of ZnO film.

  18. Pure and Sn-doped ZnO films produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Holmelund, E.; Schou, Jørgen; Tougaard, S.;

    2002-01-01

    A new technique, metronome doping, has been used for doping of films during pulsed laser deposition (PLD). This technique makes it possible to dope continuously during film growth with different concentrations of a dopant in one deposition sequence. Films of pure and doped ZnO have been produced...

  19. Frictional Properties of UV illuminated ZnO Thin Films Grown by Pulsed Laser Deposition

    Science.gov (United States)

    Chiu, Hsiang-Chih; Chang, Huan-Pu; Lo, Fang-Yu; Yeh, Yu-Ting; Department of Physics, National Taiwan Normal University Collaboration

    Zinc Oxide (ZnO) nanostructures have potential applications in nano-electro-mechanical systems (NEMS) due to their unique physical properties. ZnO is also an excellent lubricant and hence a promising candidate for protective coatings in NEMS. By means of atomic force microscopy (AFM), we have investigated the frictional properties of ZnO thin films prepared by pulsed laser deposition technique. In addition, UV illumination is used to convert the surface wettability of ZnO thin films from being more hydrophobic to superhydrophilic via the photo-catalyst effect. We found that the frictional properties of the UV illuminated, superhydrophilic ZnO surface are strongly dependent on the environment humidity. While for hydrophobic ZnO, no such dependence is found. The observed frictional behaviors can be explained by the interplay between the surface roughness, environmental humidity and the presence of nanoscale capillary condensation forming between surface asperities at the tip-ZnO contact. Our results might find applications in future ZnO related NEMS. Frictional Properties of UV illuminated ZnO Thin Films Grown by Pulsed Laser Deposition.

  20. Study on Ni-doped ZnO films as gas sensors

    Science.gov (United States)

    Rambu, A. P.; Ursu, L.; Iftimie, N.; Nica, V.; Dobromir, M.; Iacomi, F.

    2013-09-01

    Ni doped ZnO films were obtained by spin coating, using zinc acetate and nickel acetate as starting materials and N,N-dimethylformamide as solvent. The X-ray diffraction (XRD) analysis indicates that, spin coated films posses a polycrystalline structure. Ni doped ZnO films are single phase and no trace of nickel metal or binary zinc nickel phases are observed. The values of some structural parameters (crystallite size, surface roughness) are varying with the variation of Ni concentration. The sensitivity of Ni:ZnO films, at three different gasses (ammonia, liquefied petroleum gas and ethanol) was investigated. Obtained results indicate that our films are most sensitive to ammonia, the operating temperature was found to be 190 °C and the response time is 35 s. The gas sensitivity was found to depend on the Ni concentration in ZnO films.

  1. Synthesis and characterization of ZnO thin film by low cost modified SILAR technique

    Directory of Open Access Journals (Sweden)

    Haridas D. Dhaygude

    2016-03-01

    Full Text Available The ZnO thin film is prepared on Fluorine Tin Oxide (FTO coated glass substrate by using SILAR deposition technique containing ZnSO4.7H2O and NaOH as precursor solution with 150 deeping cycles at 70 °C temperature. Nanocrystalline diamond like ZnO thin film is characterized by different characterization techniques such as X-ray diffraction (XRD, Fourier transform (FT Raman spectrometer, Field Emission Scanning Electron Microscopy (FE-SEM with Energy dispersive X-Ray Analysis (EDAX, optical absorption, surface wettability and photoelectrochemical cell performance measurement. The X-ray diffraction analysis shows that the ZnO thin film is polycrystalline in nature having hexagonal crystal structure. The FT-Raman scattering exhibits a sharp and strong mode at 383 cm−1 which confirms hexagonal ZnO nanostructure. The surface morphology study reveals that deposited ZnO film consists of nanocrystalline diamond like morphology all over the substrate. The synthesized thin film exhibited absorption wavelength around 309 nm. Optical study predicted the direct band gap and band gap energy of this film is found to be 3.66 eV. The photoelectrochemical cell (PEC parameter measurement study shows that ZnO sample confirmed the highest values of, short circuit current (Isc - 629 mAcm−2, open circuit voltage (Voc - 878 mV, fill factor (FF - 0.48, and maximum efficiency (η - 0.89%, respectively.

  2. Characterization of ZnO Thin Films Doped with Natrium by Sol-Gel Method

    OpenAIRE

    gareso, paulus lobo; Syuhada, Nurnadiyah; Rauf, Nurlaela; Juarlin, Eko; Sugianto; Maddu, Akhirruddin

    2014-01-01

    This article will be presented in the 4Th International conference on Theoretical and applied Physics in Bali for 16-17 October 2014 The characterization of ZnO films doped with natrium by sol-gel spin coating method have been studied using the optical transmittance UV-Vis and X-ray diffraction (X-RD) measurements. The ZnO films were prepared using zinc acetate dehydrate (Zn(CH3COO)2.2H2O), ethanol, and diethanolamine (DEA) as the precursor, solvent, and stabilizer, respectively. For ZnO d...

  3. Photoluminescence of ZnO thin films deposited at various substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kao, Kuo-Sheng [Department of Computer and Communication, SHU-TE University, Kaohsiung, Taiwan (China); Shih, Wei-Che [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Ye, Wei-Tsuen [Department of Computer and Communication, SHU-TE University, Kaohsiung, Taiwan (China); Cheng, Da-Long, E-mail: dlcheng@stu.edu.tw [Department of Computer and Communication, SHU-TE University, Kaohsiung, Taiwan (China)

    2016-04-30

    This study investigated surface acoustic wave devices with an Al/ZnO/Si structure for use in ultraviolet sensors. ZnO thin films were fabricated using a reactive radio frequency magnetron sputtering system. The substrate temperature of ZnO thin films can be varied to obtain highly crystalline properties. The surface morphologies and c-axis preferred orientation of the ZnO thin films were determined using scanning electron microscopy and X-ray diffraction. In addition, bright-field images of ZnO crystallization were investigated using a transmission electron microscope. From photoluminescence analysis, four peaks were obtained at 377.8, 384.9, 391.4, and 403.4 nm. Interdigital transducers of an aluminum electrode were fabricated on the ZnO/Si structure by using a direct current sputtering system and photolithography, combined with the lift-off method, thereby obtaining a surface acoustic wave device. Finally, frequency responses were measured using a network analyzer, and an illuminating test was adopted for the ultraviolet sensor, using a wavelength of 355 nm from a light-emitting diode. The sensitivities of the ultraviolet sensor were also discussed. - Highlights: • The ZnO/Si SAW devices exhibit the Rayleigh and Sezawa modes. • The crystalline of ZnO affects the EHP recombination and generation. • The PL spectrum of ZnO shows Gaussian fitting distributions. • The CTD{sub UV} is influenced by SAW types and ZnO film characteristics.

  4. Enhanced the photocatalytic activity of Ni-doped ZnO thin films: Morphological, optical and XPS analysis

    Science.gov (United States)

    Abdel-wahab, M. Sh.; Jilani, Asim; Yahia, I. S.; Al-Ghamdi, Attieh A.

    2016-06-01

    Pure and Ni-doped ZnO thin films with different concentration of Ni (3.5 wt%, 5 wt%, 7 wt%) were prepared by DC/RF magnetron sputtering technique. The X-rays diffraction pattern showed the polycrystalline nature of pure and Ni-doped ZnO thin films. The surface morphology of pure and Ni doped ZnO thin films were investigated through atomic force microscope, which indicated the increase in the grain dimension and surface roughness with increasing the Ni doping. The UV-Visible transmission spectra showed the decrease in the transmittance of doped ZnO thin films with the incorporation of Ni dopants. The surface and chemical state analysis of pure and Ni doped ZnO thin films were investigated by X-rays photoelectron spectroscopy (XPS). The photocatalytic activities were evaluated by an aqueous solution of methyl green dye. The tungsten lamp of 500 W was used as a source of visible light for photocatalytic study. The degradation results showed that the Ni-doped ZnO thin films exhibit highly enhanced photocatalytic activity as compared to the pure ZnO thin films. The enhanced photocatalytic activities of Ni-doped ZnO thin films were attributed to the enhanced surface area (surface defects), surface roughness and decreasing the band gap of Ni-doped ZnO thin films. Our work supports the applications of thin film metal oxides in waste water treatment.

  5. Influence of preparation methods on photoluminescence properties of ZnO films on quartz glass

    Institute of Scientific and Technical Information of China (English)

    ZHAO Lei; LIAN Jian-she; LIU Yu-hua; JIANG Qing

    2008-01-01

    The influence of preparation methods on the photoluminescence properties of ZnO film was studied. Two methods were applied to fabricate ZnO films in a conventional pulsed laser deposition apparatus. One is high temperature (500-700 ℃) oxidation of the metallic zinc film that is obtained by pulsed laser deposition. The other is pulse laser ablation of Zn target in oxygen atmosphere at low temperature (100-250 ℃). The photoluminescence property was detected by PL spectrum. The room temperature PL spectra of the ZnO films obtained by oxidation method show single violet luminescence emission centered at 424 nm (or 2.90 eV) without any accompanied deep-level emission and UV emission. The violet emission is attributed to interstitial zinc in the films. Nanostructure ZnO film with c-axis (002) orientation is obtained by pulsed laser deposition. The ZnO film deposited at 200 ℃ shows single strong ultraviolet emission. The excellent UV emission is attributed to the good crystalline quality of the film and low intrinsic defects at such low temperature.

  6. Ga-doped ZnO thin film surface characterization by wavelet and fractal analysis

    Energy Technology Data Exchange (ETDEWEB)

    Jing, Chenlei; Tang, Wu, E-mail: tang@uestc.edu.cn

    2016-02-28

    Graphical abstract: - Highlights: • Multi-resolution signal decomposition of wavelet transform is applied to Ga-doped ZnO thin films with various thicknesses. • Fractal properties of GZO thin films are investigated by box counting method. • Fractal dimension is not in conformity with original RMS roughness. • Fractal dimension mainly depends on the underside diameter (grain size) and distance between adjacent grains. - Abstract: The change in roughness of various thicknesses Ga-doped ZnO (GZO) thin films deposited by magnetron reactive sputtering on glass substrates at room temperature was measured by atomic force microscopy (AFM). Multi-resolution signal decomposition based on wavelet transform and fractal geometry was applied to process surface profiles, to evaluate the roughness trend of relevant frequency resolution. The results give a six-level decomposition and the results change with deposited time and surface morphology. Also, it is found that fractal dimension is closely connected to the underside diameter (grain size) and the distance between adjacent grains that affect the change rate of surface and the increase of the defects such as abrupt changes lead to a larger value of fractal dimension.

  7. Room temperature ferromagnetism of Ni, (Ni, Li), (Ni, N)-doped ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    AU; ChakTong

    2010-01-01

    Ni-doped ZnO thin films (Ni concentration up to 10 mol%) were generated on Si (100) substrates by a sol-gel technique. The films showed wurtzite structure and no other phase was found. The chemical state of Ni was found to be bivalent by X-ray photoelectron spectroscopy. The results of magnetic measurements at room temperature indicated that the films were ferromagnetic, and magnetic moment decreased with rise of Ni concentration. The magnetization of Ni (10 mol%)-doped ZnO film annealed in nitrogen was lower than that annealed in argon, suggesting that the density of defects had an effect on ferromagnetism.

  8. Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yu-Min, E-mail: ymhu@nuk.edu.tw; Kuang, Chein-Hsiun; Han, Tai-Chun; Yu, Chin-Chung [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Li, Sih-Sian [Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

    2015-05-07

    In this work, we investigated the structural and magnetic properties of both as-deposited and post-annealed Cu-doped ZnO thin films for better understanding the possible mechanisms of room-temperature ferromagnetism (RT-FM) in ZnO-based diluted magnetic oxides. All of the films have a c-axis-oriented wurtzite structure and display RT-FM. X-ray photoelectron spectroscopy results showed that the incorporated Cu ions in as-deposited films are in 1+ valence state merely, while an additional 2+ valence state occurs in post-annealed films. The presence of Cu{sup 2+} state in post-annealed film accompanies a higher magnetization value than that of as-deposited film and, in particular, the magnetization curves at 10 K and 300 K of the post-annealed film separate distinctly. Since Cu{sup 1+} ion has a filled 3d band, the RT-FM in as-deposited Cu-doped ZnO thin films may stem solely from intrinsic defects, while that in post-annealed films is enhanced due to the presence of CuO crystallites.

  9. Influence of films thickness and structure on the photo-response of ZnO films

    Science.gov (United States)

    Ali Yıldırım, M.; Ateş, Aytunç

    2010-04-01

    ZnO thin films were grown using Successive Ionic Layer Adsorption and Reaction (SILAR) method on glass substrates at room temperature. Annealing temperatures and film thickness effect on the structural, morphological, optical and electrical properties of the films were studied. For this as-deposited films were annealed at 200, 300, 400 and 500 °C for 30 min in oxygen atmosphere. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that the films are covered well with glass substrates and have good polycrystalline structure and crystalline levels. The film thickness effect on band gap values was investigated and band gap values were found to be within the range of 3.49-3.19 eV. The annealing temperature and light effect on electrical properties of the films were investigated and it was found that the current increased with increasing light intensity. The resistivity values were found as 10 5 Ω-cm for as-deposited films from electrical measurements. The resistivity decreased decuple with annealing temperature and decreased centuple with light emission for annealed films.

  10. Highly textured and transparent RF sputtered Eu2O3 doped ZnO films.

    Science.gov (United States)

    Sreedharan, Remadevi Sreeja; Ganesan, Vedachalaiyer; Sudarsanakumar, Chellappan Pillai; Bhavsar, Kaushalkumar; Prabhu, Radhakrishna; Mahadevan Pillai, Vellara Pappukutty Pillai

    2015-01-01

    Background : Zinc oxide (ZnO) is a wide, direct band gap II-VI oxide semiconductor. ZnO has large exciton binding energy at room temperature, and it is a good host material for obtaining visible and infrared emission of various rare-earth ions. Methods : Europium oxide (Eu2O3) doped ZnO films are prepared on quartz substrate using radio frequency (RF) magnetron sputtering with doping concentrations 0, 0.5, 1, 3 and 5 wt%. The films are annealed in air at a temperature of 773 K for 2 hours. The annealed films are characterized using X-ray diffraction (XRD), micro-Raman spectroscopy, atomic force microscopy, ultraviolet (UV)-visible spectroscopy and photoluminescence (PL) spectroscopy. Results : XRD patterns show that the films are highly c-axis oriented exhibiting hexagonalwurtzite structure of ZnO. Particle size calculations using Debye-Scherrer formula show that average crystalline size is in the range 15-22 nm showing the nanostructured nature of the films. The observation of low- and high-frequency E2 modes in the Raman spectra supports the hexagonal wurtzite structure of ZnO in the films. The surface morphology of the Eu2O3 doped films presents dense distribution of grains. The films show good transparency in the visible region. The band gaps of the films are evaluated using Tauc plot model. Optical constants such as refractive index, dielectric constant, loss factor, and so on are calculated using the transmittance data. The PL spectra show both UV and visible emissions. Conclusion : Highly textured, transparent, luminescent Eu2O3 doped ZnO films have been synthesized using RF magnetron sputtering. The good optical and structural properties and intense luminescence in the ultraviolet and visible regions from the films suggest their suitability for optoelectronic applications.

  11. Highly textured and transparent RF sputtered Eu2O3 doped ZnO films

    Directory of Open Access Journals (Sweden)

    Remadevi Sreeja Sreedharan

    2015-03-01

    Full Text Available Background: Zinc oxide (ZnO is a wide, direct band gap II-VI oxide semiconductor. ZnO has large exciton binding energy at room temperature, and it is a good host material for obtaining visible and infrared emission of various rare-earth ions. Methods: Europium oxide (Eu2O3 doped ZnO films are prepared on quartz substrate using radio frequency (RF magnetron sputtering with doping concentrations 0, 0.5, 1, 3 and 5 wt%. The films are annealed in air at a temperature of 773 K for 2 hours. The annealed films are characterized using X-ray diffraction (XRD, micro-Raman spectroscopy, atomic force microscopy, ultraviolet (UV-visible spectroscopy and photoluminescence (PL spectroscopy. Results: XRD patterns show that the films are highly c-axis oriented exhibiting hexagonalwurtzite structure of ZnO. Particle size calculations using Debye-Scherrer formula show that average crystalline size is in the range 15–22 nm showing the nanostructured nature of the films. The observation of low- and high-frequency E2 modes in the Raman spectra supports the hexagonal wurtzite structure of ZnO in the films. The surface morphology of the Eu2O3 doped films presents dense distribution of grains. The films show good transparency in the visible region. The band gaps of the films are evaluated using Tauc plot model. Optical constants such as refractive index, dielectric constant, loss factor, and so on are calculated using the transmittance data. The PL spectra show both UV and visible emissions. Conclusion: Highly textured, transparent, luminescent Eu2O3 doped ZnO films have been synthesized using RF magnetron sputtering. The good optical and structural properties and intense luminescence in the ultraviolet and visible regions from the films suggest their suitability for optoelectronic applications.

  12. Ohmic-rectifying conversion of Ni contacts on ZnO and the possible determination of ZnO thin film surface polarity.

    Directory of Open Access Journals (Sweden)

    Kim Guan Saw

    Full Text Available The current-voltage characteristics of Ni contacts with the surfaces of ZnO thin films as well as single crystal (0001 ZnO substrate are investigated. The ZnO thin film shows a conversion from Ohmic to rectifying behavior when annealed at 800°C. Similar findings are also found on the Zn-polar surface of (0001 ZnO. The O-polar surface, however, only shows Ohmic behavior before and after annealing. The rectifying behavior observed on the Zn-polar and ZnO thin film surfaces is associated with the formation of nickel zinc oxide (Ni1-xZnxO, where x = 0.1, 0.2. The current-voltage characteristics suggest that a p-n junction is formed by Ni1-xZnxO (which is believed to be p-type and ZnO (which is intrinsically n-type. The rectifying behavior for the ZnO thin film as a result of annealing suggests that its surface is Zn-terminated. Current-voltage measurements could possibly be used to determine the surface polarity of ZnO thin films.

  13. ZnO thin films fabricated by chemical bath deposition, used as buffer layer in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lare, Y. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Godoy, A. [Facultad Ciencias de la Salud, Universidad Diego Portales, Ejercito 141, Santiago de Chile (Chile); Cattin, L. [Universite de Nantes, Nantes Atlantique Universites, IMN, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Jondo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Abachi, T. [Ecole Normale Superieure, Kouba, Alger (Algeria); Diaz, F.R. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Morsli, M. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Napo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); del Valle, M.A. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Bernede, J.C., E-mail: jean-christian.bernede@univ-nantes.fr [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France)

    2009-04-15

    ZnO thin films synthetized by chemical bath deposition are used as buffer layer between the anode and the organic electron donor in organic solar cells. Films deposited from zinc nitrate solutions are annealed in room air at 300 deg. C for half an hour. The X-ray diffraction and microanalysis studies show that ZnO polycrystalline thin films are obtained. The solar cells used are based on the couple copper phthalocyanine as electron donor and (N,N-diheptyl-3,4,9,10-perylenetetracarboxylicdiimide-PTCDI-C7) as electron acceptor. It is shown that the presence of the ZnO buffer layer improves the energy conversion efficiency of the cells. Such improvement could be attributed to a better energy level alignment at the anode/electron donor interface. The anode roughness induced by the ZnO buffer layer can also transform the planar interface organic electron donor/electron acceptor into roughen topography. This increases the interface area, where carrier separation takes place, which improves solar cells performances.

  14. Fabrication of Al-Doped ZnO Film with High Conductivity Induced by Photocatalytic Activity

    Science.gov (United States)

    Hong, Jeongsoo; Katsumata, Ken-ichi; Matsushita, Nobuhiro

    2016-10-01

    We have fabricated Al-doped ZnO films by a spin-spray method, achieving high conductivity by Al-ion doping and photocatalytic activity of the ZnO. The surface morphology of the as-deposited films was varied by changing the Al concentration and addition of citrate ions. As-deposited Al-doped ZnO film without citrate ions showed rod array structure with increasing rod width as the Al concentration was increased. Meanwhile, Al-doped ZnO film deposited with addition of citrate ions changed to exhibit dense and continuous surface morphology with high transmittance of 85%. The lowest resistivity recorded for undoped and Al-doped ZnO film was 2.1 × 10-2 Ω cm and 5.9 × 10-3 Ω cm, after ultraviolet (UV) irradiation. The reason for the decreased resistivity is thought to be that Al-ion doping and the photocatalytic activity of ZnO contributed to improve the conductivity.

  15. Luminescence and structural properties of ZnO thin films annealing in air

    Energy Technology Data Exchange (ETDEWEB)

    Baca, R; Martinez, J [Centro de Investigacion de Dispositivos Semiconductores, BUAP, Puebla, Pue. C.P. 72570 (Mexico); Esparza, A [Centro de Ciencias Aplicadas y Desarrollo de TecnologIa - UNAM. C.P. 04510, Mexico D.F (Mexico); Kryshtab, T [Departamento de Ciencias de Materiales, ESFM - IPN, Mexico D.F (Mexico); Juarez, G; Solache, H; Andraca, J; Pena, R, E-mail: rbaca02006@yahoo.com.mx

    2010-02-15

    All ZnO thin films deposited on (001) silicon substrates by DC reactive magnetron sputtering were annealed in air atmosphere with different times at 800deg. C. The samples were studied by X-ray diffraction technique (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. XRD investigation showed that ZnO phase was hexagonal wurtzite structure growing along the (002) direction. The as grown ZnO films presented macrostrain and microstrain caused a shift of the line diffraction (002) and a broadening respectively. However after 1 hour annealing these strains disappear. The grain size of ZnO films increased with an increase of annealing time. The as-deposited reactive sputtering ZnO films resulted semi-insulating with poor PL response. After high temperature annealing in air, the crystallinity and the PL response considerably improved, but their semi-insulating property also increased. The PL spectra of the annealed samples showed well defined transitions close to the near-band-edge and a wide visible deep-level band emission (430-640 nm). The main interest of this work was to enhance the PL response and to identify the origin of deep-level luminescence bands. The AFM, PL and XRD results indicated that the ZnO films annealing have potential applications in optoelectronic devices.

  16. Enhanced deposition of ZnO films by Li doping using radio frequency reactive magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Liang-xian Chen; Sheng Liu; Cheng-ming Li; Yi-chao Wang; Jin-long Liu; Jun-jun Wei

    2015-01-01

    Radio frequency (RF) reactive magnetron sputtering was utilized to deposit Li-doped and undoped zinc oxide (ZnO) films on sili-con wafers. Various Ar/O2 gas ratios by volume and sputtering powers were selected for each deposition process. The results demonstrate that the enhanced ZnO films are obtained via Li doping. The average deposition rate for doped ZnO films is twice more than that of the un-doped films. Both atomic force microscopy and scanning electron microscopy studies indicate that Li doping significantly contributes to the higher degree of crystallinity of wurtzite–ZnO. X-ray diffraction analysis demonstrates that Li doping promotes the (002) preferential orien-tation in Li-doped ZnO films. However, an increase in the ZnO lattice constant, broadening of the (002) peak and a decrease in the peak inte-gral area are observed in some Li-doped samples, especially as the form of Li2O. This implies that doping with Li expands the crystal struc-ture and thus induces the additional strain in the crystal lattice. The oriented-growth Li-doped ZnO will make significant applications in fu-ture surface acoustic wave devices.

  17. Impact of nanostructured thin ZnO film in ultraviolet protection

    Science.gov (United States)

    Sasani Ghamsari, Morteza; Alamdari, Sanaz; Han, Wooje; Park, Hyung-Ho

    2017-01-01

    Nanoscale ZnO is one of the best choices for ultraviolet (UV) protection, not only because of its antimicrobial properties but also due to its potential application for UV preservation. However, the behavior of nanostructured thin ZnO films and long-term effects of UV-radiation exposure have not been studied yet. In this study, we investigated the UV-protection ability of sol gel-derived thin ZnO films after different exposure times. Scanning electron microscopy, atomic force microscopy, and UV-visible optical spectroscopy were carried out to study the structure and optical properties of the ZnO films as a function of the UV-irradiation time. The results obtained showed that the prepared thin ZnO films were somewhat transparent under the visible wavelength region and protective against UV radiation. The UV-protection factor was 50+ for the prepared samples, indicating that they were excellent UV protectors. The deposited thin ZnO films demonstrated promising antibacterial potential and significant light absorbance in the UV range. The experimental results suggest that the synthesized samples have potential for applications in the health care field. PMID:28096668

  18. Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

    Directory of Open Access Journals (Sweden)

    Shao-Ying Ting

    2012-01-01

    Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

  19. Fabrication of highly transparent Al-ion-implanted ZnO thin films by metal vapor vacuum arc method

    Science.gov (United States)

    Lee, Han; Sivashanmugan, Kundan; Kao, Chi-Yuan; Liao, Jiunn-Der

    2017-03-01

    In this study, we utilized the metal vapor vacuum arc technique to implant vaporized aluminum (Al) ions in zinc oxide (ZnO) thin films. By adjusting the ion implantation dose and operational parameters, the conductivity and optical properties of the ZnO thin film can be controlled. The electrical sheet resistance of Al-ion-implanted ZnO decreased from 3.02 × 107 to 3.03 × 104 Ω/sq, while the transparency of the film was mostly preserved (91.5% at a wavelength of 550 nm). The ZnO thin-film Young’s modulus significantly increased with increasing Al ion dose.

  20. Effect of substrate temperature on microstructural and optical properties of ZnO films grown by pulsed laser deposition

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    ZnO thin films were deposited on n-Si (111) at various substrate temperatures by pulsed laser deposition (PLD).X-ray diffraction (XRD), photoluminescence (PL), Fourier transform infrared spectrophotometer (FTIR), and scanning electron microscopy (SEM) were used to analyze the structure, morphology, and optical property of the ZnO thin films. An optimal crystallized ZnO thin film was obtained at the substrate temperature of 600℃. A blue shift was found in PL spectra due to size confinement effect as the grain sizes decreased. The surfaces of the ZnO thin films were more planar and compact as the substrate temperature increased.

  1. Ethanol Sensing Properties of Nanosheets ZnO Thin Films Prepared by Chemical Bath Deposition

    Science.gov (United States)

    Julia, Sri; Nururddin, Ahmad; Nugraha, Suyatman; Yuliarto, Brian

    2011-12-01

    Nanosheets ZnO thin films were successfully fabricated on alumina substrate by chemical bath deposition method using Zinc Nitrate Tetra hydrate as precursor. Films were annealed at 300 °C for 30 minutes and observed by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive X-Ray Spectroscopy (EDS) to know crystal phase and structure, surface morphology, and elemental composition respectively. The gas sensing performance of ZnO thin films was studied on exposure to ethanol gas sensing in various concentration (300 and 600 ppm). The films showed higher response towards ethanol gas sensing at optimized temperature of 250 °C and exhibited excellent sensitivity of 62.45% upon exposure 300 ppm and 69% upon exposure of 600 ppm ethanol gas sensing. Further, the response and recovery times of ZnO thin films to ethanol become shorter at higher operating temperatures. A possible mechanism of ethanol sensing has been explained.

  2. Study of (1 0 0) orientated ZnO films by APCVD system

    Energy Technology Data Exchange (ETDEWEB)

    Pacio, M. [Centro de Investigacion en Dispositivos Semiconductores, Universidad Autonoma de Puebla, 14 Sur and Av. San Claudio, San Manuel 72000, Puebla (Mexico); Juarez, H., E-mail: hjuarez@cs.buap.mx [Centro de Investigacion en Dispositivos Semiconductores, Universidad Autonoma de Puebla, 14 Sur and Av. San Claudio, San Manuel 72000, Puebla (Mexico); Escalante, G.; Garcia, G.; Diaz, T.; Rosendo, E. [Centro de Investigacion en Dispositivos Semiconductores, Universidad Autonoma de Puebla, 14 Sur and Av. San Claudio, San Manuel 72000, Puebla (Mexico)

    2010-10-25

    ZnO thin films were grown on glass substrate by Atmospheric Pressure Chemical Vapor Deposition system (APCVD), using zinc acetate (Zn(CH{sub 3}COO){sub 2}) as precursor of Zn. The solution was prepared with zinc acetate in ammonium hydroxide (NH{sub 4}OH). Ozone was used as an oxidant agent to obtain ZnO films. The aqueous solution of zinc acetate was bubbled with nitrogen flow into the reaction chamber. The structural and optical properties of ZnO films were investigated in different deposition temperatures (300-375 deg. C in steps of 25 deg. C). X-ray diffraction results show that all deposited films were polycrystallined in (1 0 0) preferred orientation. Our samples showed a transmittance bigger or similar to 80% in the visible region. Preliminary studies show that the room-temperature photoluminescence spectrum of all films exhibits a strong peak in visible region at 492.31 nm.

  3. Polarity enhancement in high oriented ZnO films on Si (100) substrate

    Science.gov (United States)

    Kurniawan, Robi; Nurfani, Eka; Muhammady, Shibghatullah; Sutjahja, Inge M.; Winata, Toto; Rusydi, Andrivo; Darma, Yudi

    2016-04-01

    Zinc oxide films with hexagonal crystal structures have been grown on Si substrate (100) using the DC-unbalanced magnetron sputtering at temperature of 300°C with growth time variation. The films have been characterized using X-Ray Diffraction and Fourier Transform Infrared measurement to show the crystal parameter and atomic bonding. The results show that the films have a dominant orientation in the hkl plane (002), while peak positions are shift to lower diffraction angle with addition of growth time. In addition, the bonding between Zn and O atoms (Zn-O) tend to be weaker as indicated by transmittance peak shifting to lower energy. The weakening of Zn-O bonding is due to the contribution of addition of bond length. These conditions make the films tend to have a high polarity. Further analysis of these studies will bring us to have a good undestanding to explain the ferroelectric properties of the ZnO films.

  4. ZnO films deposited by optimized PLD technique with bias voltages

    Energy Technology Data Exchange (ETDEWEB)

    Yamaguchi, Hiroyuki; Shitara, Tamae; Komiyama, Takao; Chonan, Yasunori; Aoyama, Takashi [Department of Electronics and Information Systems, Akita Prefectural University, 84-4 Tsuchiya Ebinokuchi, 015-0055 Yuri-Honjo (Japan)

    2010-02-15

    The pulsed laser deposition (PLD) technique with bias voltage application for formation of high quality ZnO films was investigated. Oxygen ambient in the PLD chamber significantly decreased the photoluminescence (PL) intensity of near band edge (NBE) emission. Then, instead of using oxygen ambient, the PLD technique with bias voltage application was optimized to attain the stoichiometric composition of the ZnO films. As the deposition temperature was increased, the X-ray spectrum width diffracted from the (0002) planes was decreased and it showed a minimum value at 700 C. The PL intensity of the NBE emission also had its maximum value for the film deposited at 700 C. For the ZnO films deposited at 700 C, the X-ray spectrum width showed the minimum value under a bias voltage of -50 V. The PL intensity of the NBE emission also had a maximum value under the same bias voltage. Thus, ZnO films deposited under a bias voltage of -50 V at 700 C had strong NBE emission intensities. These results could be explained not only by attaining the stoichiometric composition of the ZnO film but also by decreasing the number of high energy O{sup 2-} ions which caused non-radiative recombination centers in the film. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Random lasing of ZnO thin films grown by pulsed-laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cachoncinlle, C., E-mail: christophe.cachoncinlle@univ-orleans.fr [GREMI, UMR 7344 CNRS—Université Orléans, 45067 Orléans Cedex 2 (France); Hebert, C.; Perrière, J. [Sorbonne Universités, UPMC Université Paris 06, UMR 7588, INSP, 75005 Paris (France); CNRS, UMR 7588, INSP, 75005 Paris (France); Nistor, M. [NILPRP, L 22 PO Box. MG-36, 77125 Bucharest—Magurele (Romania); Petit, A.; Millon, E. [GREMI, UMR 7344 CNRS—Université Orléans, 45067 Orléans Cedex 2 (France)

    2015-05-01

    Highlights: • Random lasing at RT in nanocrystalline ZnO PLD thin film (<100 nm). • Low optical pumping threshold (<30 kW cm{sup −2}) for UV random lasing. • Random lasing interpreted by the electron-hole plasma (EHP) model. - Abstract: Low-dimensional semiconductor structures on nanometer scale are of great interest because of their strong potential applications in nanotechnologies. We report here optical and structural properties on UV lasing in ZnO thin films. The ZnO films, 110 nm thick, were prepared using pulsed-laser deposition on c-cut sapphire substrates at 500 °C under 10{sup −2} oxygen pressure. The ZnO films are nearly stoichiometric, dense and display the wurtzite phase. The films are highly textured along the ZnO c-axis and are constituted of nanocrystallites. According to Hall measurements these films are conductive (0.11 Ω cm). Photoluminescence measurements reveals a so-called random lasing in the range 390 to 410 nm, when illuminating at 355 nm with a tripled frequency pulsed Nd-YAG laser. Such random lasing is obtained at rather low optical pumping, 45 kW cm{sup −2}, a value lower than those classically reported for pulsed-laser deposition thin films.

  6. Gallium doping in transparent conductive ZnO thin films prepared by chemical spray pyrolysis

    Science.gov (United States)

    Babar, A. R.; Deshamukh, P. R.; Deokate, R. J.; Haranath, D.; Bhosale, C. H.; Rajpure, K. Y.

    2008-07-01

    Zinc oxide (ZnO) and ZnO : Ga films have been deposited by the spray pyrolysis method onto preheated glass substrates using zinc acetate and gallium nitrate as precursors for Zn and Ga ions, respectively. The effect of Ga doping on the structural, morphological, optical and electrical properties of sprayed ZnO thin films were investigated using x-ray diffraction (XRD), scanning electron microscopy, optical absorption, photoluminescence (PL) and Hall effect techniques. XRD studies reveal that films are polycrystalline with hexagonal (wurtzite) crystal structure. The thin films were oriented along the (0 0 2) plane. Room temperature PL measurements indicate that the deposited films exhibit proper doping of Ga in ZnO lattice. The average transparency in the visible range was around ~85-95% for typical thin film deposited using 2 at% gallium doping. The optical band gap increased from 3.31 to 3.34 eV with Ga doping of 2 at%. The addition of gallium induces a decrease in electrical resistivity of the ZnO : Ga films up to 2 at% gallium doping. The highest figure of merit observed in this present study was 3.09 × 10-3 cm2 Ω-1.

  7. Gallium doping in transparent conductive ZnO thin films prepared by chemical spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Babar, A R; Deshamukh, P R; Deokate, R J; Bhosale, C H; Rajpure, K Y [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004 (India); Haranath, D [National Physical Laboratory, Dr K S Krishnan Road, New Delhi 110 012 (India)], E-mail: rajpure@yahoo.com

    2008-07-07

    Zinc oxide (ZnO) and ZnO : Ga films have been deposited by the spray pyrolysis method onto preheated glass substrates using zinc acetate and gallium nitrate as precursors for Zn and Ga ions, respectively. The effect of Ga doping on the structural, morphological, optical and electrical properties of sprayed ZnO thin films were investigated using x-ray diffraction (XRD), scanning electron microscopy, optical absorption, photoluminescence (PL) and Hall effect techniques. XRD studies reveal that films are polycrystalline with hexagonal (wurtzite) crystal structure. The thin films were oriented along the (0 0 2) plane. Room temperature PL measurements indicate that the deposited films exhibit proper doping of Ga in ZnO lattice. The average transparency in the visible range was around {approx}85-95% for typical thin film deposited using 2 at% gallium doping. The optical band gap increased from 3.31 to 3.34 eV with Ga doping of 2 at%. The addition of gallium induces a decrease in electrical resistivity of the ZnO : Ga films up to 2 at% gallium doping. The highest figure of merit observed in this present study was 3.09 x 10{sup -3} cm{sup 2} {omega}{sup -1}.

  8. Electrodeposited ZnO thin film as an efficient alternative blocking layer for TiCl4 pre-treatment in TiO2-based dye sensitized solar cells

    Science.gov (United States)

    Kouhestanian, E.; Mozaffari, S. A.; Ranjbar, M.; SalarAmoli, H.; Armanmehr, M. H.

    2016-08-01

    Recently, ZnO nanostructures have received considerable attention in fabrication of dye sensitized solar cell (DSSC) photoanodes due to their unique transport properties. In the present study, a chronoamperometric method was performed to fabricate the ZnO nanostructures as an appropriate alternative of TiCl4 pre-treatment to reduce the recombination reactions, while retaining the TiO2-based DSSC performance. The effect of polyvinyl alcohol (PVA) on ZnO electrodeposition to control the growth and crystallization of ZnO nanostructures was investigated. ZnO/TiO2 based-DSSCs were fabricated using N719 ruthenium dye and all photovoltaic parameters were characterized. Incident photon to current efficiency (IPCE), electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV) and VOC decay techniques were employed for studying the cell properties which is resulted in a significant enhancement in cell performance.

  9. High electron mobility ZnO film for high-performance inverted polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Peiwen; Chen, Shan-Ci; Zheng, Qingdong; Huang, Feng, E-mail: fhuang@fjirsm.ac.cn; Ding, Kai [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou Fujian, 350002 (China)

    2015-04-20

    High-quality ZnO films (ZnO-MS) are prepared via magnetron sputtering deposition with a high mobility of about 2 cm{sup 2}/(V·s) and are used as electron transport layer for inverted polymer solar cells (PSCs) with polymer poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b′] dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]:[6,6]-phenyl C71-butyric acid methyl ester as the active layer. A significant improvement of J{sub SC}, about 20% enhancement in contrast to the devices built on sol-gel derived ZnO film (ZnO-Sol), is found in the ZnO-MS based device. High performance ZnO-MS based PSCs exhibit power conversion efficiency (PCE) up to 8.55%, which is much better than the device based on ZnO-Sol (PCE = 7.78%). Further research on cathode materials is promising to achieve higher performance.

  10. New insights in the structural and morphological properties of sol-gel deposited ZnO multilayer films

    Science.gov (United States)

    Demes, T.; Ternon, C.; Riassetto, D.; Roussel, H.; Rapenne, L.; Gélard, I.; Jimenez, C.; Stambouli, V.; Langlet, M.

    2016-08-01

    This study shows how the structural and morphological properties of sol-gel deposited ZnO films can be precisely tuned and selectively controlled. For that purpose, ZnO films have been deposited through a multilayer sol-gel route using solutions of zinc acetate dihydrate (ZAD) diluted in 1-butanol. The opto-geometrical, morphological, and structural properties of these films have been thoroughly studied in relation to the ZAD concentration in butanol, number of deposited single-layers, and heat-treatment conditions. On this basis, different physical processes occurring over the multilayer deposition procedure have been discussed to explain how the experimental parameters influence the film properties and enable to tune the grain size, texture coefficient, and surface coverage rate in a wide range of values. This work is a first step toward the optimized growth of ZnO nanowires on sol-gel films and their subsequent integration in 2D or 3D nanowire-based biosensors.

  11. Photocatalytic activity and photocorrosion of atomic layer deposited ZnO ultrathin films for the degradation of methylene blue.

    Science.gov (United States)

    Cao, Yan-Qiang; Chen, Jun; Zhou, Hang; Zhu, Lin; Li, Xin; Cao, Zheng-Yi; Wu, Di; Li, Ai-Dong

    2015-01-16

    ZnO ultrathin films with varied thicknesses of 7-70 nm were prepared at 200 °C on Si and fused quartz substrates by atomic layer deposition (ALD). The impact of film thickness and annealing temperature on the crystallinity, morphology, optical bandgap, and photocatalytic properties of ZnO in the degradation of methylene blue (MB) dye under UV light irradiation (λ = 365 nm) has been investigated deeply. The as-deposited 28 nm thick ZnO ultrathin film exhibits highest photocatalytic activity, ascribed to the smallest band gap of 3.21 eV and proper thickness. The photocorrosion effect of ALD ZnO ultrathin films during photocatalytic process is observed. The presence of MB significantly accelerates the dissolution of ZnO ultrathin films. The possible photoetching mechanism of ZnO in MB solution is proposed.

  12. Effect of oxygen content on the structural and optical properties of ZnO films grown by atmospheric pressure MOCVD

    Institute of Scientific and Technical Information of China (English)

    Sajjad Hussain; Yaqoob Khan; Volodymyr Khranovskyy; Riaz Muhammad; Rositza Yakimova

    2013-01-01

    Atmospheric pressure MOCVD was used to deposit ZnO layers on sapphire and homoepitaxial template under different oxygen flow rates. Oxygen content affects the lattice constant value and texture coefficient of the films as evidenced by the y-2y peaks position and their intensity. Films deposited at lower oxygen flow rate possess higher value of strain and stresses. ZnO films deposited at high oxygen flow rates show intense UV emissions while samples prepared under oxygen deficient conditions exhibited defect related emission along with UV luminescence. The results are compared to the ZnO films deposited homoepitaxially on annealed ZnO samples. The data obtained suggest that ZnO stoichiometry is responsible for the structural and optical quality of ZnO films.

  13. A greener electrodeposition recipe for ZnO films in terawatt photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Bin; Han, Xiaofei [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287 (United States); Feng, Qing [Department of Chemistry and Biochemistry, University of Texas at Arlington, Arlington, TX 76019 (United States); Tao, Meng, E-mail: meng.tao@asu.edu [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287 (United States)

    2012-09-01

    Electrodeposition of ZnO can be performed in an aqueous solution using a greener recipe, where the solution can be reused for multiple deposition runs. The solution in this greener recipe has only one function, i.e. to provide electrical conductivity for the deposition reactions. A Zn sheet serves as the anode, which dissolves during the deposition as the Zn source. O{sub 2} is bubbled into the solution and reduced to OH{sup -} ions as the O source. This recipe minimizes concentration changes in the solution as deposition proceeds, making the solution reusable. An initial Zn{sup 2+} concentration of a few mM in the solution is required, not to serve as a Zn source but to facilitate the deposition and prevent precipitation of ZnO in the solution. Multiple deposition runs for ZnO films in the same solution have been demonstrated. X-ray diffraction, optical transmittance and absorption spectra reveal that all the ZnO films have similar structural and optical properties. They all display high transmittance of {approx} 80% and low absorbance of {approx} 10%. - Highlights: Black-Right-Pointing-Pointer A new ZnO electrodeposition recipe is developed where the solution is reusable. Black-Right-Pointing-Pointer Waste solutions from ZnO electrodeposition are reduced by over four fold. Black-Right-Pointing-Pointer ZnO films from the same solution show high transmittance and low absorbance.

  14. Experiment and prediction on thermal conductivity of Al2O3/ZnO nano thin film interface structure

    Indian Academy of Sciences (India)

    Ping Yang; Liqiang Zhang; Haiying Yang; Dongjing Liu; Xialong Li

    2014-05-01

    We predict that there is a critical value of Al2O3/ZnO nano thin interface thickness based on two assumptions according to an interesting phenomenon, which the thermal conductivity (TC) trend of Al2O3/ZnO nano thin interface is consistent with that of relevant single nano thin interface when the nano thin interface thickness is > 300 nm; however, TC of Al2O3/ZnO nano thin interface is higher than that of relevant single nano thin interface when the thin films thickness is < 10 nm. This prediction may build a basis for the understanding of interface between two different oxide materials. It implies an idea for new generation of semiconductor devices manufacturing.

  15. ZnO nanoparticles induced effects on nanomechanical behavior and cell viability of chitosan films

    Energy Technology Data Exchange (ETDEWEB)

    Jayasuriya, Ambalangodage C., E-mail: a.jayasuriya@utoledo.edu [Department of Orthopaedic Surgery, University of Toledo, Toledo, OH 43614 (United States); Aryaei, Ashkan; Jayatissa, Ahalapitiya H. [Departments of Mechanical Engineering, University of Toledo, Toledo, OH 43606 (United States)

    2013-10-15

    The aim of this paper is to develop novel chitosan–zinc oxide nanocomposite films for biomedical applications. The films were fabricated with 1, 5, 10 and 15% w/w of zinc oxide (ZnO) nanoparticles (NPs) incorporated with chitosan (CS) using a simple method. The prepared nanocomposite films were characterized using atomic force microscopy, Raman and X-ray diffraction studies. In addition, nano and micro mechanical properties were measured. It was found that the microhardness, nanohardness and its corresponding elastic modulus increased with the increase of ZnO NP percentage in the CS films. However, the ductility of films decreased as the percentage of ZnO NPs increased. Cell attachment and cytotoxicity of the prepared films at days two and five were evaluated in vitro using osteoblasts (OBs). It was observed that OB viability decreased in films with higher than 5% ZnO NPs. This result suggests that although ZnO NPs can improve the mechanical properties of pure CS films, only a low percentage of ZnO NPs can be applied for biomedical and bioengineering applications because of the cytotoxicity effects of these particles. Highlights: • Chitosan–zinc oxide nanocomposite films were fabricated using a simple method. • Material characterization methods showed that adding zinc oxide up to 15% does not change the crystal structure of chitosan. • Zinc oxide nanoparticles improve nano and micro mechanical properties of chitosan films. • Adding more than 5% w/w zinc oxide nanoparticles demonstrates cytotoxicity on osteoblast cells.

  16. Porous nanostructured ZnO films deposited by picosecond laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Sima, Cornelia [University of Bucharest, Faculty of Physics, 405 Atomistilor, P.O. Box MG-11, 077125, Bucharest-Magurele (Romania); National Institute for Laser, Plasma and Radiation Physics, Laser Department, 409 Atomistilor, P.O. Box MG-36, 077125, Bucharest-Magurele (Romania); Grigoriu, Constantin, E-mail: grigoriu@ifin.nipne.ro [National Institute for Laser, Plasma and Radiation Physics, Laser Department, 409 Atomistilor, P.O. Box MG-36, 077125, Bucharest-Magurele (Romania); Besleaga, Cristina; Mitran, Tudor; Ion, Lucian; Antohe, Stefan [University of Bucharest, Faculty of Physics, 405 Atomistilor, P.O. Box MG-11, 077125, Bucharest-Magurele (Romania)

    2012-08-20

    Highlights: Black-Right-Pointing-Pointer We deposite porous nanostructured ZnO films by picoseconds laser ablation (PLA). Black-Right-Pointing-Pointer We examine changes of the films structure on the experimental parameter deposition. Black-Right-Pointing-Pointer We demonstrate PLA capability to produce ZnO nanostructured films free of particulates. - Abstract: Porous nanostructured polycrystalline ZnO films, free of large particulates, were deposited by picosecond laser ablation. Using a Zn target, zinc oxide films were deposited on indium tin oxide (ITO) substrates using a picosecond Nd:YVO{sub 4} laser (8 ps, 50 kHz, 532 nm, 0.17 J/cm{sup 2}) in an oxygen atmosphere at room temperature (RT). The morpho-structural characteristics of ZnO films deposited at different oxygen pressures (150-900 mTorr) and gas flow rates (0.25 and 10 sccm) were studied. The post-deposition influence of annealing (250-550 Degree-Sign C) in oxygen on the film characteristics was also investigated. At RT, a mixture of Zn and ZnO formed. At substrate temperatures above 350 Degree-Sign C, the films were completely oxidized, containing a ZnO wurtzite phase with crystallite sizes of 12.2-40.1 nm. At pressures of up to 450 mTorr, the porous films consisted of well-distinguished primary nanoparticles with average sizes of 45-58 nm, while at higher pressures, larger clusters (3.1-14.7 {mu}m) were dominant, leading to thicker films; higher flow rates favored clustering.

  17. N-doped ZnO films grown from hybrid target by the pulsed laser deposition technique

    Science.gov (United States)

    Martín-Tovar, E. A.; Chan y Díaz, E.; Acosta, M.; Castro-Rodríguez, R.; Iribarren, A.

    2016-10-01

    ZnO thin films were grown by the pulsed laser deposition technique on glass substrate using a hybrid target composed of ZnO powder embedded into a poly(ethyl cyanoacrylate) matrix. The resulting thin film presented ZnO wurtzite structure with very low stress and diffractogram very similar to that of the powder pattern. From comparing with ZnO thin films grown from traditional sintered target, it is suggested that the use of this hybrid target with a soft matrix led to ejection of ZnO clusters that conveniently disposed and adhered to substrate and previous deposited layers. Chemical measurements showed the presence of Zn-N bonds, besides Zn-O ones. Optical absorption profile confirmed the presence of low-polymerized zinc oxynitride molecular subunits, besides ZnO.

  18. Structural and Optical Properties of ZnO Films with Different Thicknesses Grown on Sapphire by MOCVD

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    ZnO(002) films with different thicknesses, grown on Al2O3 (006) substrates by metal-organic chemical vapor deposition( MOCVD), were etched by Ar ion beams. The samples were examined by D8 X-ray diffraction, scanning electron microscopy(SEM), and photoluminescence (PL) spectrometry. The structural properties vary with the increasing thickness of the films. When the film thickness is thin, the phi(Φ) scanning curves for ZnO(103) and sapphire(116) substrate show the existence of two kinds of orientation relationships between ZnO films and sapphire,which are ZnO(002)//Al2O3 (006), ZnO(100)//Al2O3 (110) and ZnO(002)//Al2O3 (006), ZnO(110)//Al2O3(110). When the thickness increases to 500 nm there is only one orientation relationship, which is ZnO(002)//Al2O3 (006), ZnO [ 100 ]//Al2O3[ 110 ]. Their photoluminescence (PL) spectra at room temperature show that the optical properties of ZnO films have been greatly improved when increasing the thickness of films is increased.

  19. Characterizations of multilayer ZnO thin films deposited by sol-gel spin coating technique

    Science.gov (United States)

    Khan, M. I.; Bhatti, K. A.; Qindeel, Rabia; Alonizan, Norah; Althobaiti, Hayat Saeed

    In this work, zinc oxide (ZnO) multilayer thin films are deposited on glass substrate using sol-gel spin coating technique and the effect of these multilayer films on optical, electrical and structural properties are investigated. It is observed that these multilayer films have great impact on the properties of ZnO. X-ray Diffraction (XRD) confirms that ZnO has hexagonal wurtzite structure. Scanning Electron Microscopy (SEM) showed the crack-free films which have uniformly distributed grains structures. Both micro and nano particles of ZnO are present on thin films. Four point probe measured the electrical properties showed the decreasing trend between the average resistivity and the number of layers. The optical absorption spectra measured using UV-Vis. showed the average transmittance in the visible region of all films is 80% which is good for solar spectra. The performance of the multilayer as transparent conducting material is better than the single layer of ZnO. This work provides a low cost, environment friendly and well abandoned material for solar cells applications.

  20. Photocatalytic Performance of ZnO: Al Films under Different Light Sources

    Directory of Open Access Journals (Sweden)

    Prashant Pradhan

    2012-01-01

    Full Text Available ZnO and Al doped ZnO films were produced by spray pyrolysis. The films were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, UV-vis spectroscopy, and photoluminescence. Their photocatalytic activity was evaluated by the decomposition of the methyl orange dye using different light sources: ultraviolet light, artificial white light, and direct sunlight. The films were also tested under darkness for comparison. The ZnO films were able to degrade the test pollutant under UV and sunlight in more than a 60% after 180 min of irradiation and a scarce degradation was obtained using white light. However, the Al doped ZnO films presented a very high degradation rate not only under UV and sunlight (100% degradation, but also under white light (90% degradation after the same irradiation time. An unexpected high degradation was also obtained in the dark, which indicates that a nonphotonic process is taking place parallel to the photocatalytic process. This can be due to the extra electrons—provided by the aluminum atoms—that migrate to the surface and produce radicals favoring the decomposition process even in the dark. The high activity achieved by the ZnO: Al films under natural conditions can be potentially applied to water treatment processes.

  1. Synthesis and optical properties of ZnO nanocluster porous films deposited by modified SILAR method

    Science.gov (United States)

    Gao, X. D.; Li, X. M.; Yu, W. D.

    2004-05-01

    Ultrasonic rinsing procedure was introduced to successive ionic layer adsorption and reaction (SILAR) method. ZnO nanocluster porous films were successfully deposited on glass substrate using zinc-ammonia complexed precursor. The crystallinity, microstructure, optical properties and photoluminescence were measured and analyzed for both as-deposited and annealed films. Effects of experimental parameters and heat treatment on the structural and optical properties were discussed. Results show that as-deposited ZnO film exhibits excellent crystallinity with the preferential orientation of (0 0 2) plane. A porous feature with interconnected particles of 200-400 nm in ZnO films was observed, with each ZnO particle formed by the aggregation of many crystallites in size of 30-50 nm. The low transmittance due to scattering losses over the porous ZnO layer down to 16% was detected. The annealing at 400 °C can promote the preferential orientation along (1 0 0) plane, the interfusion of adjacent particles and the reduction of scattering loss. Intense and sharp ultraviolet emission peaks at 392 nm dominates the PL spectra for both as-deposited and annealed samples, indicating the good optical quality of ZnO layer.

  2. Influence of C or In buffer layer on photoluminescence behaviour of ultrathin ZnO film

    Science.gov (United States)

    Saravanan, K.; Jayalakshmi, G.; Krishnan, R.; Sundaravel, B.; Panigrahi, B. K.

    2016-09-01

    We study the effect of the indium or carbon buffer layer on the photoluminescence (PL) property of ZnO ultrathin films deposited on a Si(100) substrate. The surface morphology of the films obtained using scanning tunnelling microscopy shows spherical shaped ZnO nanoparticles of size ˜8 nm in ZnO/C/Si and ˜22 nm in ZnO/Si samples, while the ZnO/In/Si sample shows elliptical shaped ZnO particles. Further, the ZnO/C/Si sample shows densely packed ZnO nanoparticles in comparison with other samples. Strong band edge emission has been observed in the presence of In or C buffer layer, whereas the ZnO/Si sample exhibits poor PL emission. The influence of C and In buffer layers on the PL behaviour of ZnO films is studied in detail using temperature dependent PL measurements in the range of 4 K-300 K. The ZnO/C/Si sample exhibits a multi-fold enhancement in the PL emission intensity with well-resolved free and bound exciton emission lines. Our experimental results imply that the ZnO films deposited on the C buffer layer showed higher particle density and better exciton emission desired for optoelectronic applications.

  3. Photoelectrochemical water oxidation by screen printed ZnO nanoparticle films: effect of pH on catalytic activity and stability

    Science.gov (United States)

    Fekete, Monika; Riedel, Wiebke; Patti, Antonio F.; Spiccia, Leone

    2014-06-01

    Nanostructured ZnO films are promising photoanode materials in photoelectrochemical water splitting. While such ZnO photoanodes have achieved high activity and good light conversion efficiency in the UV spectral region, their application in water splitting devices has been hampered by the susceptibility of ZnO towards photocorrosion in aqueous electrolytes. We report a systematic investigation aimed at optimising the electrolyte solution to improve the long-term stability of ZnO photoanodes. A stability diagram, based on the band edge positions of ZnO and the pH-dependent photodegradation potentials of ZnO (relative to the decomposition of water), indicates that the optimum pH operating conditions for ZnO photoanodes lie between pH 9-12.5. To verify this prediction experimentally, the activity and long-term stability of uniform screen-printed nano-ZnO films was tested in a wide range of buffered and non-buffered electrolytes (pH 6-13.5). The ZnO films were more active in buffered, than in non-buffered electrolytes, and the highest activities were observed close to the pKa of the phosphate and borate buffers used. Under zero applied potential, these screen-printed films achieved the highest reported photocurrents to date (0.42 mA cm-2 at pH 6 and 0.67 mA cm-2 at pH 10.5) for any pristine or modified ZnO-based water oxidation catalyst. The films were subjected to 12 h of controlled potential electrolysis, in selected electrolytes, under AM 1.5G simulated sunlight. The results are in good agreement with calculations based on thermodynamic data for ZnO. Films tested at pH 6 and 7 (representing typically used operating conditions) degraded rapidly, whereas they exhibited the highest stability when tested in a pH 10.5 borate buffer. In this case, 75% of the initial photoactivity was preserved after 12 hours, indicating that the lifetime of the electrode could be increased by over an order of magnitude compared to standard testing conditions.Nanostructured ZnO films are

  4. Optoelectronics and formaldehyde sensing properties of tin-doped ZnO thin films

    Science.gov (United States)

    Prajapati, C. S.; Kushwaha, Ajay; Sahay, P. P.

    2013-11-01

    Sn-doped ZnO thin films were deposited on clean glass substrates using the chemical spray pyrolysis technique. XRD analyses confirm stable ZnO hexagonal wurtzite structure of the films with crystallite size in the range of 20-28 nm. The surface roughness of the films increases on Sn doping, which favors to higher adsorption of oxygen species on the film surface, resulting in higher gas response. Optical studies reveal that the band gap decreases on Sn doping. All the films show near band edge emission, and on Sn doping the luminescence peak intensity has been found to increase. Photocurrent in the 1.5 at.% doped film enhances about three times to that observed in the undoped ZnO film. Among all the films examined, the 1.5 at.% Sn-doped film exhibits the maximum response (˜94.5 %) at the operating temperature of 275 °C for 100 ppm concentration of formaldehyde, which is much higher than the response (˜35 %) in the undoped film. The gas response of the film is attributed to the chemisorption of oxygen on the film surface and the subsequent reaction between the adsorbed oxygen species and the formaldehyde molecules.

  5. Schottky Junction Methane Sensors Using Electrochemically Grown Nanocrystalline-Nanoporous ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    P. K. Basu

    2009-01-01

    Full Text Available Nanocrystalline-nanoporous ZnO thin films were prepared by an electrochemical anodization method, and the films were tested as methane sensors. It was found that Pd-Ag catalytic contacts showed better sensing performance compared to other noble metal contacts like Pt and Rh. The methane sensing temperature could be reduced to as low as 100∘C by sensitizing nanocrystalline ZnO thin films with Pd, deposited by chemical method. The sensing mechanism has been discussed briefly.

  6. Effective annealing of ZnO thin films grown by three different SILAR processes

    OpenAIRE

    2015-01-01

    In the present work, zinc oxide (ZnO) thin films have been grown three different cation solution on glass substrates by a simple and economic successive ionic layer absorption and reaction method (SILAR). One of each grown different solution films was annealed to investigate to effective annealing at 473 K for 30 minutes. Absorption measurements showed that the optical band-gaps of all ZnO thin films were wide and were about 3.08-3.31 eV. All films’ band gap increased with annealing. Energy-D...

  7. Investigations of ZnO thin films deposited by a reactive pulsed laser ablation

    Institute of Scientific and Technical Information of China (English)

    Y.; C.; SOO; H.; KANDEL; M.; A.; THOMAS; C.; P.; DAGHLIAN

    2009-01-01

    Highly transparent ZnO thin films were deposited at different substrate temperatures by pulsed laser deposition in an oxygen atmosphere. The thin films were characterized by various techniques including X-ray diffraction, scanning electron microscopy, optical absorption, and photoluminescence. We demonstrated that oriented wurtzite ZnO thin films could be deposited at room temperature using a high purity zinc target. Variable temperature photoluminescence revealed new characteristics in the band edge emission. The underlying mechanism for the observed phenomena was also discussed.

  8. Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

    Science.gov (United States)

    Radha, R.; Sakthivelu, A.; Pradhabhan, D.

    2016-08-01

    Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.

  9. Influence of Bi doping on the electrical and optical properties of ZnO thin films

    Science.gov (United States)

    Abed, S.; Bougharraf, H.; Bouchouit, K.; Sofiani, Z.; Derkowska-Zielinska, B.; Aida, M. S.; Sahraoui, B.

    2015-09-01

    Transparent conducting ZnO doped Bi thin films were prepared on glass substrates by ultrasonic spray method. The influence of Bi doping concentration on the structural, optical and nonlinear optical properties of ZnO thin films was studied. The X-ray diffraction (XRD) analysis show that all studied films have a hexagonal wurtzite structure and are preferentially oriented along the c-axis from substrate surface. Optical transmittance measurements show that all samples have average 80% transparency in the visible light. Optical band gap values range between 3.14 and 3.28 eV. ZnO film with 3 wt% of Bi showed the highest electrical conductivity. In addition, the second and third order nonlinear susceptibilities were determined and their values have been calculated.

  10. Physical properties of ZnO thin films deposited at various substrate temperatures using spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Prasada Rao, T., E-mail: prasadview@gmail.co [Advanced Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli-620015 (India); Santhosh Kumar, M.C., E-mail: santhoshmc@yahoo.co [Advanced Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli-620015 (India); Safarulla, A. [Advanced Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli-620015 (India); Ganesan, V.; Barman, S.R. [UGC-DAE Consortium for Scientific Research, Indore-452001 (India); Sanjeeviraja, C. [School of Physics, Alagappa University, Karaikudi-630003 (India)

    2010-05-01

    Zinc oxide (ZnO) thin films have been deposited with various substrate temperatures by spray pyrolysis technique onto glass substrates. X-ray diffraction (XRD) results showed the random growth orientation of the crystallites and the presence of the wurtzite phase of ZnO. The x-ray photoelectron spectroscopy (XPS) measurements reveal the presence of Zn{sup 2+} and chemisorbed oxygen in ZnO thin films. Atomic force micrograms (AFM) revealed a granular, polycrystalline morphology for the films. The grain size is found to increase as the substrate temperature increases. All films exhibit a transmittance of about 85% in the visible region. The photoluminescence (PL) measurements indicated that the intensity of emission peaks significantly varying with substrate temperature. Electrical resistivity has been found to decrease; while the carrier concentration increases with substrate temperature.

  11. Variable range hopping crossover and magnetotransport in PLD grown Sb doped ZnO thin film

    Science.gov (United States)

    Mukherjee, Joynarayan; Mannam, Ramanjaneyulu; Ramachandra Rao, M. S.

    2017-04-01

    We report on the variable range hopping (VRH) crossover in the electrical transport of Sb doped ZnO (SZO) thin film. Structural, chemical, electrical and magnetotransport properties were carried out on SZO thin film grown by pulsed laser deposition. X-photoelectron spectroscopy study confirms the presence of both Sb3+(33%) and Sb5+(67%) states. Sb doped ZnO thin film shows n-type behavior which is attributed to the formation of SbZn and/or SbZn–VZn defect complex. Temperature dependent resistivity measurement showed that in a low temperature regime (doped ZnO thin films is explained by the Khosla and Fischer model.

  12. Rectifying properties of ZnO thin films deposited on FTO by electrodeposition technique

    Science.gov (United States)

    Lv, Jianguo; Sun, Yue; Zhao, Min; Cao, Li; Xu, Jiayuan; He, Gang; Zhang, Miao; Sun, Zhaoqi

    2016-03-01

    ZnO thin films were successfully grown on fluorine-doped tin oxide glass by electrodeposition technique. The crystal structure, surface morphology and optical properties of the thin films were investigated. The average crystallite size and intensity of A1(LO) mode increase with improving the absolute value of deposition potential. The best preferential orientation along c-axis and the richest oxygen interstitial defects have been observed in the sample deposited at -0.8 V. A heterojunction device consisting of ZnO thin film and n-type fluorine-doped tin oxide was fabricated. The current-voltage (I-V) characteristic of the p-n heterojunction device deposited at -0.8 V shows the best rectifying diode behavior. The p-type conductivity of the ZnO thin film could be attributed to complex defect of unintentional impurity and interstitial oxygen.

  13. Role of Ni doping on transport properties of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dar, Tanveer Ahmad, E-mail: tanveerphysics@gmail.com; Agrawal, Arpana; Sen, Pratima [Laser Bhawan, School Of Physics, Devi Ahilaya University Takshashila Campus Khandwa Road Indore, Indore-452001 (India)

    2015-06-24

    Nickel doped (Ni=0.05) and undoped Zinc Oxide (ZnO) thin films have been prepared by Pulsed laser deposition (PLD) technique. The structural analysis of the films was done by X-ray diffraction (XRD) studies which reveal absence of any secondary phase in the prepared samples. UV transmission spectra show that Ni doping reduces the transparency of the films. X-ray Photoelectron spectroscopy (XPS) also shows the presence of metallic Ni along with +2 oxidation state in the sample. Low temperature magneto transport properties of the ZnO and NiZnO films are also discussed in view of Khosla fisher model. Ni doping in ZnO results in decrease in magnitude of negative MR.

  14. Temperature dependent photoluminescence characteristics of nanocrystalline ZnO films grown by sol-gel technique

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, S.; Goswami, M.L.N.; Das, K.; Dhar, A. [Department of Physics and Meteorology, IIT Kharagpur 721 302 (India); Ray, S.K. [Department of Physics and Meteorology, IIT Kharagpur 721 302 (India)], E-mail: physkr@phy.iitkgp.ernet.in

    2008-10-01

    The structural as well as optical properties of nanocrystalline ZnO films, with hexagonal shaped particles of size 30-35 nm grown on p-Si (100) substrates by sol-gel technique, are investigated. Selected-area electron diffraction and X-ray diffraction patterns of annealed films reveal the formation of wurtzite structure. The mechanism of ultraviolet (UV) and green emission from ZnO thin films, post-annealed at various temperatures, is investigated using photoluminescence spectra. The oxygen content in annealed ZnO films plays an important role to suppress the green band emission. Temperature dependent photoluminescence spectra are recorded in the temperature range 10 K to 300 K to investigate different excitonic peaks in the UV-region.

  15. Preparation and Photovoltaic Properties of Dye Sensitized Solar Cells Using ZnO Nanorods Stacking Films on AZO Substrate as Photoanode.

    Science.gov (United States)

    Xu, Yang; Wang, Xina; Liu, Rong; Wang, Hao

    2016-04-01

    Three-dimensional stacking of ZnO nanorods on conducting aluminum-doped ZnO (AZO) glass were studied as efficient photoanodes of dye sensitized solar cells (DSSCs). By changing hydrothermal growth time and cycle times, the thickness of ZnO nanorods stacking films varied from 30 µm to 64 µm, and its influence on the energetic conversion efficiency of the DSSCs based on the stacking films photoanodes was investigated. The loading density of N719 on the surface of ZnO nanorods was studied to increase the efficiency of the cells. Annealing experiments showed that the AZO substrates remained good conductors until heated above 350 °C. A photoelectric conversion efficiency as high as ~2.0% together with ISC of ~9.5 mA/cm2, VOC of ~0.5 V and FF of ~41.4% was achieved for the DSSC using 50 µm-thick film stacking by ZnO nanorods as photoanode and N719 as sensitizer under illumination of AM1.5G solar light (power density of 100 mW/cm2). A charge separation and transfer mechanism was proposed for the ZnO nanorods stacking electrode-based DSSCs.

  16. MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    J. Lee; W. Gao; Z. Li; M. Hodgson; A. Asadov; J. Metson

    2005-01-01

    ZnO thin films were deposited on a glass substrate by dc (direct current) and rf (radio frequency) magnetron sputtering. Post-deposition annealing was performed in different atmospheres and at different temperatures. The correlation of the annealing conditions with the microstructure and properties of the ZnO films were investigated by ultraviolet-visible spectroscopy, X-ray diffraction, conductivity measurement and scanning electron microscopy. Only the strong 002peak could be observed by X-ray diffraction. The post-deposition annealing of ZnO films was found to alter the film's microstructure and properties, including crystallinity, porosity, grain size, internal stress level and resistivity. It was also found that after annealing, the conductivity of poorly conductive samples often improved. However, annealing does not improve the conductivity of samples with high conductivity prior to annealing. The resistivity of as-grown films annealing on the conductivity of ZnO, it is believed that annealing may alter the presence and distribution of oxygen defects, reduce the lattice stress, cause diffusion, grain coarsening and recrystallization. Annealing will reduce the density of grain boundaries in less dense films,which may decrease the resistivity of the films. On the other hand, annealing may also increase the porosity of thin films, leading to an increase in resistivity.

  17. Realization of Ag-S codoped p-type ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Tian Ning, E-mail: xtn9886@zju.edu.cn [Department of Science, Zhijiang College of Zhejiang University of Technology, Hangzhou, Zhejiang 310024 (China); Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Li, Xiang; Lu, Zhong [Department of Science, Zhijiang College of Zhejiang University of Technology, Hangzhou, Zhejiang 310024 (China); Chen, Yong Yue [Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Sui, Cheng Hua [Department of Science, Zhijiang College of Zhejiang University of Technology, Hangzhou, Zhejiang 310024 (China); Wu, Hui Zhen [Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China)

    2014-10-15

    Highlights: • Ag-S codoped p-type ZnO thin films have been fabricated. • The films exhibit low resistivity and high Hall mobility and hole concentration. • A ZnO:(Ag, S)/i-ZnO/ZnO:Al homojunction has been fabricated and shows rectifying behaviors. - Abstract: Ag-S codoped ZnO films have been grown on quartz substrates by e-beam evaporation at low temperature (100 °C). The effects of Ag{sub 2}S content on the structural and electrical properties of the films were investigated. The results showed that 2 wt% Ag{sub 2}S doped films exhibited p-type conduction, with a resistivity of 0.0347 Ω cm, a Hall mobility of 9.53 cm{sup 2} V{sup −1} s{sup −1}, and a hole concentration of 1.89 × 10{sup 19} cm{sup −3} at room temperature. The X-ray photoelectron spectroscopy measurements showed that Ag and S have been incorporated into the films. To further confirm the p-type conduction of Ag-S codoped ZnO films, a ZnO:(Ag, S)/i-ZnO/ZnO:Al homojunction was fabricated and rectifying behaviors of which was measured. High electrical performance and low growth temperature indicate that Ag{sub 2}S is a promising dopant to fabricate p-type Ag-S codoped ZnO films.

  18. Pulsed laser deposition of aluminum-doped ZnO films at 355 nm

    DEFF Research Database (Denmark)

    Holmelund, E.; Schou, Jørgen; Thestrup Nielsen, Birgitte;

    2004-01-01

    Conducting, transparent films of aluminium-doped ZnO (AZO) have been produced at the laser wavelength 355 nm. The most critical property, the electric resistivity, is up to a factor of 8 above that for films produced at shorter wavelengths. In contrast, the transmission of visible light through...

  19. Effect of Annealing Temperature on Structural and Optical Properties of N-Doped ZnO Films

    Institute of Scientific and Technical Information of China (English)

    ZHONG Sheng; ZHANG Wei-Ying; WU Xiao-Peng; LIN Bi-Xia; FU Zhu-Xi

    2008-01-01

    Nitrogen-doped ZnO (ZnO: N) films are prepared by thermal oxidation of sputtered Zn,3N,2 layers on Al,2O,3 substrates. The correlation between the structural and optical properties of ZnO: N films and annealing temperatures is investigated. X-ray diffraction result demonstrates that the as-sputtered Zn,3N,2 films are transformed into ZnO: N films after annealing above 600℃. X-ray photoelectron spectroscopy reveals that nitrogen has two chemical states in the ZnO: N films: the No acceptor and the double donor(N2)o. Due to the No acceptor, the hole concentration in the film annealed at 700℃ is predicted to be highest, which is also confirmed by Hall effect measurement. In addition, the temperature dependent photoluminescence spectra allow to calculate the nitrogen acceptor binding energy.

  20. High Temperature Thermoelectric Properties of ZnO Based Materials

    DEFF Research Database (Denmark)

    Han, Li

    This thesis investigated the high temperature thermoelectric properties of ZnO based materials. The investigation first focused on the doping mechanisms of Al-doped ZnO, and then the influence of spark plasma sintering conditions on the thermoelectric properties of Al, Ga-dually doped ZnO. Follow......This thesis investigated the high temperature thermoelectric properties of ZnO based materials. The investigation first focused on the doping mechanisms of Al-doped ZnO, and then the influence of spark plasma sintering conditions on the thermoelectric properties of Al, Ga-dually doped Zn...... for conventional ZnO materials. For Al-doped ZnO, α- and γ-Al2O3 were selectively used as dopants in order to understand the doping mechanism of each phase and their effects on the thermoelectric properties. The samples were prepared by the spark plasma sintering technique from precursors calcined at various...... temperatures. Clear correlations between the initial crystallographic phase of the dopants and the thermoelectric properties of the resulting Al-doped ZnO were observed. For Al, Ga-dually doped ZnO, the spark plasma sintering conditions together with the microstructural evolution and thermoelectric properties...

  1. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Ahumada-Lazo, R.; Torres-Martínez, L.M. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Ruíz-Gómez, M.A. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Departmento de Física Aplicada, CINVESTAV-IPN, Antigua Carretera a Progreso km 6, Mérida, Yucatán 97310, México (Mexico); Vega-Becerra, O.E. [Centro de Investigación en Materiales Avanzados S.C, Alianza norte 202, Parque de Investigación e Innovación Tecnológica, C.P. 66600 Apodaca Nuevo León, México (Mexico); and others

    2014-12-15

    Graphical abstract: - Highlights: • Decolorization of Orange G dye using highly c-axis-oriented ZnO thin films. • The flake-shaped film shows superior and stable photoactivity at a wide range of pH. • The highest photodecolorization was achieved at pH of 7. • The exposure of (101) and (100) facets enhanced the photoactivity. • ZnO thin films exhibit a promising performance as recyclable photocatalysts. - Abstract: The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV–visible spectroscopy (UV–Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media.

  2. Pulsed laser deposited Al-doped ZnO thin films for optical applications

    Directory of Open Access Journals (Sweden)

    Gurpreet Kaur

    2015-02-01

    Full Text Available Highly transparent and conducting Al-doped ZnO (Al:ZnO thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002 oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:ZnO thin films are important for applications such as transparent electromagnetic interference (EMI shielding materials and solar cells. The obtained optical band gap (3.2–3.08 eV was found to be less than pure ZnO (3.37 eV films. The lowering in the band gap in Al:ZnO thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:ZnO thin films for light emitting devices (LEDs applications. The current–voltage (I–V measurements show the ohmic behavior of the films with resistivity (ρ~10−3 Ω cm.

  3. Mn2+ ions distribution in doped sol-gel deposited ZnO films

    Science.gov (United States)

    Stefan, Mariana; Ghica, Daniela; Nistor, Sergiu V.; Maraloiu, Adrian V.; Plugaru, Rodica

    2017-02-01

    The localization and distribution of the Mn2+ ions in two sol-gel deposited ZnO films doped with different manganese concentrations were investigated by electron paramagnetic resonance spectroscopy and analytical transmission electron microscopy. In the lightly doped sample the Mn2+ ions are mainly localized substitutionally at isolated tetrahedrally coordinated Zn2+ sites in both crystalline ZnO nanograins (34%) and surrounding disordered ZnO (52%). In the highly doped ZnO film, a much smaller proportion of manganese substitutes Zn2+ in the crystalline and disordered ZnO (10%). The main amount (85%) of manganese aggregates in a secondary phase as an insular-like distribution between the ZnO nanograins. The remaining Mn2+ ions (14% and 5% at low and high doping levels, respectively) are localized at isolated, six-fold coordinated sites, very likely in the disordered intergrain region. Annealing at 600 °C induced changes in the Mn2+ ions distribution, reflecting the increase of the ZnO crystallization degree, better observed in the lightly doped sample.

  4. Swift heavy ion induced optical and structural modifications in RF sputtered nanocrystalline ZnO thin film

    Science.gov (United States)

    Singh, S. K.; Singhal, R.; Vishnoi, R.; Kumar, V. V. S.; Kulariya, P. K.

    2017-01-01

    In the present study, 100 MeV Ag7+ ion beam-induced structural and optical modifications of nanocrystalline ZnO thin films are investigated. The nanocrystalline ZnO thin films are grown using radio frequency magnetron sputtering and irradiated at fluences of 3 × 1012, 1 × 1013 and 3 × 1013 ions/cm2. The incident swift heavy ions induced change in the crystallinity together with the preferential growth of crystallite size along the c axis (002) orientation. The average crystallite size is found to be increased from 10.8 ± 0.7 to 20.5 ± 0.3 nm with increasing the ion fluence. The Atomic force microscopy analysis confirms the variation in the surface roughness by varying the incident ion fluences. The UV-visible spectroscopy shows the decrement in transmittance of the film with ion irradiation. The micro-Raman spectra of ZnO thin films are investigated to observe ion-induced modifications which support the increased lattice defects with higher fluence. The variation in crystallinity indicates that ZnO-based devices can be used in piezoelectric transduction mechanism.

  5. Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition.

    Science.gov (United States)

    Lin, Yuan-Yu; Hsu, Che-Chen; Tseng, Ming-Hung; Shyue, Jing-Jong; Tsai, Feng-Yu

    2015-10-14

    Passivation is a challenging issue for the oxide thin-film transistor (TFT) technologies because it requires prolonged high-temperature annealing treatments to remedy defects produced in the process, which greatly limits its manufacturability as well as its compatibility with temperature-sensitive materials such as flexible plastic substrates. This study investigates the defect-formation mechanisms incurred by atomic layer deposition (ALD) passivation processes on ZnO TFTs, based on which we demonstrate for the first time degradation-free passivation of ZnO TFTs by a TiO2/Al2O3 nanolaminated (TAO) film deposited by a low-temperature (110 °C) ALD process. By combining the TAO passivation film with ALD dielectric and channel layers into an integrated low-temperature ALD process, we successfully fabricate flexible ZnO TFTs on plastics. Thanks to the exceptional gas-barrier property of the TAO film (water vapor transmission rate (WVTR)20 cm2 V(-1) s(-1), subthreshold swing10,000 s), air-storage (>1200 h), and bending (1.3 cm radius for 1000 times).

  6. Laser induced photoconductivity in sol–gel derived Al doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Eskandari, F.; Ranjbar, M., E-mail: ranjbar@cc.iut.ac.ir; Kameli, P.; Salamati, H.

    2015-11-15

    In this paper Al doped ZnO (AZO) thin films with 0, 3, 6 and 12 at. % Al concentration were prepared by sol–gel method on glass substrates. The deposited films were annealed at different temperatures of 300, 350, 400, 450 and 500 °C for 1 h in air. X-ray diffraction (XRD) showed wurtzite crystalline structure for the films annealed above 400 °C. The films were subsequently irradiated by beams of excimer (KrF, λ = 248 nm) laser. The evolution of crystal structure, surface morphology and optical properties were studied using XRD, filed emission scanning electron microscope (FE-SEM) and UV–Vis spectrophotometer, respectively. Real-time measurement of electrical conductivity during laser irradiation showed a transient or persistent photoconductivity effect. The effect of laser energy on this photoconductivity was also investigated. Based on the observed photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), the observed photoconductivity effect was described. - Highlights: • AZO (0–12 at. % Al) films were prepared by sol–gel method and annealed at different temperatures. • Excimer laser (λ = 248 nm) irradiation leads to improvement of crystalline structure. • Average optical transmission doesn't change and optical gap decreases by irradiation. • Photoconductivity was investigated by real-time measurement of electrical resistance. • Sample of 6% Al annealed at 450–500 °C showed the best photoconductivity effect.

  7. Annealing effect on the property of ultraviolet and green emissions of ZnO thin films

    Science.gov (United States)

    Kang, Hong Seong; Kang, Jeong Seok; Kim, Jae Won; Lee, Sang Yeol

    2004-02-01

    The mechanism of ultraviolet (UV) and green emission of ZnO thin films deposited on (001) sapphire substrates by pulsed laser deposition was investigated by using postannealing treatment at various annealing temperatures after deposition. Structural, electrical, and optical properties of ZnO films have been also observed. As the postannealing temperature increased, the intensity of UV (380 nm) peak and the carrier concentration were decreased while the intensity of the visible (about 490-530 nm) peak and the resistivity were increased. The role of oxygen in ZnO thin film during the annealing process was important to the change of optical properties. The mechanism of the luminescence suggested that UV luminescence of ZnO thin film was related to the transition from near band edge to valence band, and green luminescence of ZnO thin film was caused by the transition from deep donor level to valence band due to oxygen vacancies. The activation energy derived by using the variation of green emission intensity was 1.19 eV.

  8. Influence of annealing temperature on ZnO thin films grown by dual ion beam sputtering

    Indian Academy of Sciences (India)

    Sushil Kumar Pandey; Saurabh Kumar Pandey; Vishnu Awasthi; Ashish Kumar; Uday P Deshpande; Mukul Gupta; Shaibal Mukherjee

    2014-08-01

    We have investigated the influence of in situ annealing on the optical, electrical, structural and morphological properties of ZnO thin films prepared on -type Si(100) substrates by dual ion beam sputtering deposition (DIBSD) system. X-ray diffraction (XRD) measurements showed that all ZnO films have (002) preferred orientation. Full-width at half-maximum (FWHM) of XRD from the (002) crystal plane was observed to reach to a minimum value of 0.139° from ZnO film, annealed at 600 °C. Photoluminescence (PL) measurements demonstrated sharp near-band-edge emission (NBE) at ∼ 380 nm along with broad deep level emissions (DLEs) at room temperature. Moreover, when the annealing temperature was increased from 400 to 600 °C, the ratio of NBE peak intensity to DLE peak intensity initially increased, however, it reduced at further increase in annealing temperature. In electrical characterization as well, when annealing temperature was increased from 400 to 600 °C, room temperature electron mobility enhanced from 6.534 to 13.326 cm2/V s, and then reduced with subsequent increase in temperature. Therefore, 600 °C annealing temperature produced good-quality ZnO film, suitable for optoelectronic devices fabrication. X-ray photoelectron spectroscopy (XPS) study revealed the presence of oxygen interstitials and vacancies point defects in ZnO film annealed at 400 °C.

  9. Preparation and properties of ZnO thin films deposited by sol-gel technique

    Institute of Scientific and Technical Information of China (English)

    LAN Wei; PENG Xingping; LIU Xueqin; HE Zhiwei; WANG Yinyue

    2007-01-01

    Zinc oxide (ZnO) thin films were deposited on (100) Si substrates by sol-gel technique.Zinc acetate was used as the precursor material.The effect of different anneal-ing atmospheres and annealing temperatures on composition, structural and optical properties of ZnO thin films was inves-tigated by using Fourier transform infrared spectroscopy, X-ray diffraction,atomic force microscopy and photolumi-nescence (PL),respectively.At an annealing temperature of 400℃ in N2 for 2 h,dried gel films were propitious to undergo structural relaxation and grow ZnO grains.ZnO thin film annealed at 400℃ in N2 for 2 h exhibited the optimal structure and PL property,and the grain size and the lattice constants of the film were calculated (41.6 nm,a = 3.253 A and c=5.210A).Moreover,a green emission around 495 nm was observed in the PL spectra owing to the oxygen vacancies located at the surface of ZnO grains.With increas- ing annealing temperature,both the amount of the grown ZnO and the specific surface area of the grains decrease,which jointly weaken the green emission.

  10. Structural and morphological study of ZnO thin films electrodeposited on n-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ait Ahmed, N., E-mail: nadiaitahmed@yahoo.fr [Laboratoire de Technologie des materiaux et Genie des Procedes : Equipe d' electrochimie - Corrosion Universite Abderrahmane Mira, Bejaia, 06000 (Algeria); Unite de Developpement de la Technologie du Silicium, 02 Bd Frantz Fanon, B.P. 140, Alger 7 Merveilles (Algeria); Fortas, G. [Unite de Developpement de la Technologie du Silicium, 02 Bd Frantz Fanon, B.P. 140, Alger 7 Merveilles (Algeria); Hammache, H. [Laboratoire de Technologie des materiaux et Genie des Procedes : Equipe d' electrochimie - Corrosion Universite Abderrahmane Mira, Bejaia, 06000 (Algeria); Sam, S.; Keffous, A.; Manseri, A. [Unite de Developpement de la Technologie du Silicium, 02 Bd Frantz Fanon, B.P. 140, Alger 7 Merveilles (Algeria); Guerbous, L. [Centre de Recherche Nucleaire d' Alger (Algeria); Gabouze, N., E-mail: ngabouze@yahoo.fr [Unite de Developpement de la Technologie du Silicium, 02 Bd Frantz Fanon, B.P. 140, Alger 7 Merveilles (Algeria)

    2010-10-01

    In this work, we report on the electrodeposition of ZnO thin films on n-Si (1 0 0) and glass substrates. The influence of the deposition time on the morphology of ZnO thin films was investigated. The ZnO thin films were characterized by X-ray diffraction (XRD), energy dispersive X-ray (EDS) and scanning electron microscopy (SEM). The results show a variation of ZnO texture from main (0 0 2) at 10 min to totally (1 0 1) at 15 min deposition time. The photoluminescence (PL) studies show that both UV ({approx}382 nm) and blue ({approx}432 nm) luminescences are the main emissions for the electrodeposited ZnO films. In addition, the film grown at 15 min indicates an evident decrease of the yellow-green ({approx}520 nm) emission band comparing with that of 10 min. Finally, transmittance spectra show a high transmission value up to 85% in the visible wavelength range. Such results would be very interesting for solar cells applications.

  11. Photoluminescence engineering in polycrystalline ZnO and ZnO-based compounds

    Directory of Open Access Journals (Sweden)

    Iryna Markevich

    2016-04-01

    Full Text Available The results of the investigations of photoluminescence (PL in ZnO and ZnO-based composite materials are presented. The PL and PL excitation (PLE spectra of undoped and doped with I group elements or rear earth ions ZnO polycrystalline films, ZnO, Zn1–xMgxO and ZnMgO–TiO2 ceramics were studied. The structural properties of the samples were investigated with X-ray diffraction. Polycrystalline films were prepared by a screen-printing method and annealed at TS = 500–1000 °C. The films annealed at TS < 800 °C exhibited intense UV emission, whereas defect-related one appeared at 800 °C and enhanced with increasing TS. Improvement of the PL and structural characteristics of ZnO films due to Li-doping were achieved. The PL bands caused by Sm and Ho ions were observed under ZnO band-to-band excitation. In the PL spectra of ZnO and Zn1–xMgxO ceramics, two types of PL bands were separated: i the bands, whose spectral positions were not influenced by the Mg content (green Cu-related as well as self-activated orange and red ones; ii the bands, spectral positions of which exhibited some blueshift with increasing Mg content (orange Li- and Ag-related and self-activated green ones. In the PL spectra of ZnMgO–TiO2 composites, an intense red emission was found to appear in addition to the broad blue-orange band inherent in ZnMgO alloy. The red emission was ascribed to Mg2TiO4 inclusions in ZnMgO matrix.

  12. Acoustoelectric Effect on the Responses of SAW Sensors Coated with Electrospun ZnO Nanostructured Thin Film

    Directory of Open Access Journals (Sweden)

    Zafer Ziya Ozturk

    2012-08-01

    Full Text Available In this study, zinc oxide (ZnO was a very good candidate for improving the sensitivity of gas sensor technology. The preparation of an electrospun ZnO nanostructured thin film on a 433 MHz Rayleigh wave based Surface Acoustic Wave (SAW sensor and the investigation of the acoustoelectric effect on the responses of the SAW sensor are reported. We prepared an electrospun ZnO nanostructured thin film on the SAW devices by using an electrospray technique. To investigate the dependency of the sensor response on the structure and the number of the ZnO nanoparticles, SAW sensors were prepared with different coating loads. The coating frequency shifts were adjusted to fall between 100 kHz and 2.4 MHz. The sensor measurements were performed against VOCs such as acetone, trichloroethylene, chloroform, ethanol, n-propanol and methanol vapor. The sensor responses of n-propanol have opposite characteristics to the other VOCs, and we attributed these characteristics to the elastic effect/acoustoelectric effect.

  13. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    Science.gov (United States)

    Karakaya, Seniye; Ozbas, Omer

    2015-02-01

    ZnO is an II-VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO2) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200-1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and electrodes in solar cells.

  14. Using the hydrothermal method to grow p-type ZnO nanowires on Al-doped ZnO thin film to fabricate a homojunction diode.

    Science.gov (United States)

    Tseng, Yung-Kuan; Hung, Meng-Chun; Su, Shun-Lung; Li, Sheng-Kai

    2014-10-01

    In this study, the hydrothermal method is used to grow phosphorus-doped ZnO nanowires on Si/SiO2 substrates deposited with Al-doped ZnO thin film. This structure forms a homogeneous p-n junction. In this study, we are the pioneers to use ammonium hypophosphite (NH4H2PO2) as a source of phosphorus to prepare the precursor solution. Ammonium hypophosphite of different concentration levels is used to observe its effects on the growth of nanowires. The results show that the precursor solution prepared from ammonium hypophosphite can produce good crystalline ZnO nanowires while there is no linear relationship between the amounts and concentration levels of phosphorus doped into the nanowires. Whether the phosphorus-doped ZnO nanowires have the characteristics of a p-type semiconductor is indirectly verified by measuring whether the p-n junction made up of Al-doped ZnO thin film and phosphorus-doped ZnO nanowires shows rectifying behavior. I-V measurements are made on the specimens. The results show good rectifying behavior, proving that the phosphorus-doped ZnO nanowires and Al-doped AZO films have p-type and n-type semiconductor properties, constituting a good p-n junction. This result also proves that ammonium hypophosphite is a better source of phosphorus in the hydrothermal method to synthesize phosphorus-doped ZnO nanowires.

  15. Enhanced luminescence properties of hybrid Alq{sub 3}/ZnO (organic/inorganic) composite films

    Energy Technology Data Exchange (ETDEWEB)

    Cuba, M.; Muralidharan, G., E-mail: muraligru@gmail.com

    2014-12-15

    Pristine tris-(8-hydroxyquionoline)aluminum(Alq{sub 3}) and (Alq{sub 3}/ZnO hybrid) composites containing different weight percentages (5 wt%, 10 wt%, 20 wt%, 30 wt%, 40 wt% and 50 wt%) of ZnO in Alq{sub 3} were synthesized and coated on to a glass substrate using the dip coating method. The optimum concentration of ZnO in Alq{sub 3} films to get the best luminescence yield has been identified. XRD pattern reveals the amorphous nature of pure Alq{sub 3} film. The Alq{sub 3} films containing different weight percentages of ZnO show the presence of crystalline ZnO in Alq{sub 3}/ZnO composite films. The FTIR spectrum confirms the formation of quinoline with absorption in the region 600−800 cm{sup −1}. The hybrid Alq{sub 3}/ZnO composite films indicate the presence of Zn−O vibration band along with the corresponding Alq{sub 3} band. The band gap (HOMO–LUMO) of Alq{sub 3} film was calculated using absorption spectra and it is 2.87 eV for pristine films while it is 3.26 eV, 3.21 eV, 3.14 eV, 3.10 eV, 3.13 eV and 3.20 eV for the composite films containing 5–50 wt% of ZnO. The photoluminescence (PL) spectra of Alq{sub 3} films show a maximum PL intensity at 514 nm when excited at 390 nm. The ZnO incorporated composite films (Alq{sub 3}/ZnO) exhibit an emission in 485 nm and 514 nm. The composite films containing 30 wt% of ZnO exhibit maximum luminescence yield. - Highlights: • The pure Alq{sub 3} and Alq{sub 3}/ZnO composite were synthesized and coated on to a glass substrate using dip coating method. • Alq{sub 3}/ZnO composite film containing 30 wt% of ZnO exhibits two fold increases in luminescence intensity. • The shielding effect of ZnO on the Alq{sub 3} material suppresses the interactions among the host molecules in the excited state. • This leads to enhance the luminescence intensity in composite films.

  16. Effect of Oxidation Temperature on Characteristics of Thermally Oxidized ZnO Thin Films on Mica Substrates.

    Science.gov (United States)

    Moon, Jiyun; Kim, Younggyu; Kim, Byunggu; Leem, Jae-Young

    2015-11-01

    Muscovite mica is one of the promising alternatives to polymer substrates because of its good thermal resistivity, flexibility, and transparency. In this study, metallic Zn films with a thickness of 300 nm were deposited on mica substrates through thermal evaporation; the thin films were then oxidized by annealing at temperatures ranging from 350 to 550 degrees C. The structural and optical properties of thermally oxidized ZnO thin films were investigated. Diffraction peaks for ZnO (100) and (002) planes were observed only for the ZnO thin films oxidized at temperatures above 450 degrees C. These films consisted of relatively rough film-like structures, and the average transmittance of the films was greater than 70% in the visible region. The highest near-band-edge emission was observed for the ZnO thin films oxidized at 500 degrees C. Upon increasing the oxidation temperatures to 500 degrees C, the optical band gap was blue-shifted.

  17. Decrease in work function of transparent conducting ZnO tin films by phosphorus ion implantation.

    Science.gov (United States)

    Heo, Gi-Seok; Hong, Sang-Jin; Park, Jong-Woon; Choi, Bum-Ho; Lee, Jong-Ho; Shin, Dong-Chan

    2008-09-01

    To confirm the possibility of engineering the work function of ZnO thin films, we have implanted phosphorus ions into ZnO thin films deposited by radio-frequency magnetron sputtering. The fabricated films show n-type characteristics. It is shown that the electrical and optical properties of those thin films vary depending sensitively on the ion dose and rapid thermal annealing time. Compared to as-deposited ZnO films, the work-function of phosphorus ion-implanted ZnO thin films is observed to be lower and decreases with increasing ion doses. It is likely that the zinc or oxygen vacancies are firstly filled with the implanted phosphorus ions. With further increased ions, free electrons are generated as Zn2+ sites are replaced by those ions or interstitial phosphorus ions increase at the lattice sites, the fermi level by which approaches the conduction band and thus the work function decreases. Those films exhibit the optical transmittance higher than 85% within the visible wavelength range (up to 800 nm).

  18. Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

    Science.gov (United States)

    Lim, Chul; Oh, Ji Young; Koo, Jae Bon; Park, Chan Woo; Jung, Soon-Won; Na, Bock Soon; Chu, Hye Yong

    2014-11-01

    Flexible oxide thin-film transistors (Oxide-TFTs) have emerged as next generation transistors because of their applicability in electronic device. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. A low-temperature process to improve the performance of solution-processed n-channel ZnO thin-film transistors (TFTs) fabricated via spin-coating and inkjet-printing is introduced here. ZnO nanoparticles were synthesized using a facile sonochemical method that was slightly modified based on a previously reported method. The influence of the annealing atmosphere on both nanoparticle-based TFT devices fabricated via spin-coating and those created via inkjet printing was investigated. For the inkjet-printed TFTs, the characteristics were improved significantly at an annealing temperature of 150 degrees C. The field effect mobility, V(th), and the on/off current ratios were 3.03 cm2/Vs, -3.3 V, and 10(4), respectively. These results indicate that annealing at 150 degrees C 1 h is sufficient to obtain a mobility (μ(sat)) as high as 3.03 cm2/Vs. Also, the active layer of the solution-based ZnO nanoparticles allowed the production of high-performance TFTs for low-cost, large-area electronics and flexible devices.

  19. Nanostructured Zn and ZnO nanowire thin films for mechanical and self-cleaning applications

    Energy Technology Data Exchange (ETDEWEB)

    Shaik, Ummar Pasha [Advanced Centre of Research in High Energy Materials, University of Hyderabad, Prof. C R Rao Road, Gachibowli, Hyderabad 500046 (India); Purkayastha, Debarun Dhar, E-mail: ddebarun@yahoo.com [Department of Physics, National Institute of Technology Nagaland, Chumukedima, Dimapur 797103 (India); Krishna, M. Ghanashyam [Advanced Centre of Research in High Energy Materials, University of Hyderabad, Prof. C R Rao Road, Gachibowli, Hyderabad 500046 (India); School of Physics, University of Hyderabad, Prof. C R Rao Road, Gachibowli, Hyderabad 500046 (India); Madhurima, V. [Department of Physics, Central University of Tamil Nadu, Thiruvarur 610004 (India)

    2015-03-01

    Highlights: • Zn metal films were deposited by thermal evaporation, on various substrates. • Upon annealing Zn there is transformation of the Zn nanosheets into ZnO nanowires. • ZnO nanowires are superhydrophobic and exhibit wetting transition on UV exposure. • ZnO will be useful in self-cleaning, mechanical and oxidation resistance surfaces. - Abstract: Nanostructured Zn metal films were deposited by thermal evaporation, on borosilicate glass, Quartz, sapphire, lanthanum aluminate and yttria stabilized zirconia substrates. The as-deposited films are nanocrystalline and show a morphology that consists of triangular nanosheets. The films are hydrophobic with contact angles between 102° and 120° with hardness and Young's modulus between 0.15–0.8 GPa and 18–300 GPa, respectively. Thermal annealing of the films at 500 °C results only in partial oxidation of Zn to ZnO, which indicates good oxidation resistance. Annealing also causes transformation of the Zn nanosheets into ZnO nanowires that are polycrystalline in nature. The ZnO nanowires are superhydrophobic with contact angles between 159° and 162°, contact angle hysteresis between 5° and 10° and exhibit a reversible superhydrophobic–hydrophilic transition under UV irradiation. The nanowires are much softer than the as-deposited Zn metal films, with hardness between 0.02 and 0.4 GPa and Young's modulus between 3 and 35 GPa. The current study thus demonstrates a simple process for fabrication of nanostructured Zn metal films followed by a one-step transformation to nanowires with properties that will be very attractive for mechanical and self-cleaning applications.

  20. Photovoltaic properties of undoped ZnO thin films prepared by the spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Ikhmayies, S.J. [Applied Science Private Univ., Amman (Jordan). Dept. of Physics; Abu El-Haija, N.M.; Ahmad-Bitar, R.N. [Jordan Univ., Amman (Jordan). Dept. of Physics

    2009-07-01

    Zinc oxide (ZnO) can be used as a window material, transparent electrode and active layer in different types of solar cells, UV emitters, and UV sensors. In addition to being low cost, ZnO is more abundant than indium tin oxide. ZnO is non toxic and has a high chemical stability in reduction environments. When ZnO films are made without any intentional doping, they exhibit n-type conductivity. ZnO thin films can be prepared by reactive sputtering, laser ablation, chemical-vapour deposition, laser molecular-beam epitaxy, thermal evaporation, sol-gel, atomic layer deposition and spray pyrolysis, with the latter being simple, inexpensive and adaptable to large area depositions. In this work ZnCl{sub 2} was used as a source of Zn where it was dissolved in distilled water. The structural, electrical and optical properties of the films were investigated due to their important characteristic for solar cell applications. Polycrystalline ZnO thin films were deposited on glass substrate by spray pyrolysis using a home-made spraying system at substrate temperature of 450 degrees C. The films were characterized by recording and analyzing their I-V plots, their transmittance, X-ray diffraction and SEM micrographs. There resistivity was found to be about 200 ohms per cm and their bandgap energy about 3.27 eV. X-ray diffraction patterns revealed that the films have a hexagonal wurtzite structure and are highly ordered with a preferential orientation (002). SEM images revealed that the substrates are continuously covered and the surface of the film is uniform. 16 refs., 4 figs.

  1. In and Ga Codoped ZnO Film as a Front Electrode for Thin Film Silicon Solar Cells

    OpenAIRE

    Duy Phong Pham; Huu Truong Nguyen; Bach Thang Phan; Thi My Dung Cao; Van Dung Hoang; Vinh Ai Dao; Junsin Yi; Cao Vinh Tran

    2014-01-01

    Doped ZnO thin films have attracted much attention in the research community as front-contact transparent conducting electrodes in thin film silicon solar cells. The prerequisite in both low resistivity and high transmittance in visible and near-infrared region for hydrogenated microcrystalline or amorphous/microcrystalline tandem thin film silicon solar cells has promoted further improvements of this material. In this work, we propose the combination of major Ga and minor In impurities codop...

  2. A novel hierarchical ZnO disordered/ordered bilayer nanostructured film for dye sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Yamin, E-mail: yaminfengccnuphy@outlook.com; Wu, Fei; Jiang, Jian; Zhu, Jianhui; Fodjouong, Ghislain Joel; Meng, Gaoxiang; Xing, Yanmin; Wang, Wenwu; Huang, Xintang, E-mail: xthuang@phy.ccnu.edu.cn

    2013-12-25

    Graphical abstract: A novel hierarchical disordered/ordered bilayer ZnO nanostructured film in the length of 18 μm have been successfully synthesized on the FTO substrate; the hierarchical ZnO nanostructured film electrodes applied in DSSCs exhibit photoelectric conversion efficiency as high as 5.16%. Highlights: •A novel hierarchical ZnO structure film was fabricated on a FTO substrate. •Hierarchical ZnO film is applied as the electrodes for dye sensitized solar cells. •The film possess high specific surface area and fast electron transport effect. •The light-scattering effect of the hierarchical film is pronounced. •The energy conversion efficiency of hierarchical ZnO electrode reaches to 5.16%. -- Abstract: A novel hierarchical ZnO nanostructured film is synthesized via a chemical bath deposition (CBD) method followed by a treatment of thermal decomposition onto a fluorine-doped tin oxide (FTO) substrate. This hierarchical film is composed of disordered ZnO nanorods (NRs) (top layer) and ordered ZnO nanowires (NWs) (bottom layer). The products possess the following features such as high specific surface area, fast electron transport, and pronounced light-scattering effect, which are quite suitable for dye sensitized solar cells (DSSCs) applications. A light-to-electricity conversion efficiency of 5.16% is achieved when the hierarchical ZnO nanostructured film is used as the photoanode under 100 mW cm{sup −2} illumination. This efficiency is found to be much higher than that of the DSSCs with pure ordered ZnO NWs (1.45%) and disordered ZnO NRs (3.31%) photoanodes.

  3. Chitosan/poly (vinyl alcohol) films containing ZnO nanoparticles and plasticizers

    Energy Technology Data Exchange (ETDEWEB)

    Vicentini, Denice S. [Mechanical Engineering Department, Federal University of Santa Catarina, University Campus, 88040-900 Florianopolis, Santa Catarina (Brazil); Smania, Arthur [Microbiology and Parasitology Department, Federal University of Santa Catarina, University Campus, 88040-900 Florianopolis, Santa Catarina (Brazil); Laranjeira, Mauro C.M., E-mail: mauro@qmc.ufsc.br [Mechanical Engineering Department, Federal University of Santa Catarina, University Campus, 88040-900 Florianopolis, Santa Catarina (Brazil); Chemistry Department, QUITECH, Federal University of Santa Catarina, University Campus, 88040-900 Florianopolis, Santa Catarina (Brazil)

    2010-05-10

    In this study ZnO nanoparticles were prepared by the Pechini method from a polyester by reacting citric acid with ethylene glycol in which the metal ions are dissolved, and incorporated into blend films of chitosan (CS) and poly (vinyl alcohol) (PVA) with different concentrations of polyoxyethylene sorbitan monooleate, Tween 80 (T80). These films were characterized by infrared spectroscopy (FTIR), X-ray diffraction (XRD), thermogravimetric analysis (TGA), scanning electron microscopy (SEM), swelling degree, degradation of films in Hank's solution and the mechanical properties. Besides these characterizations, the antibacterial activity of the films was tested, and the films containing ZnO nanoparticles showed antibacterial activity toward the bacterial species Staphylococcus aureus. The observed antibacterial activity in the composite films prepared in this work suggests that they may be used as hydrophilic wound and burn dressings.

  4. Nanostructured ZnO thin films prepared by sol–gel spin-coating

    Energy Technology Data Exchange (ETDEWEB)

    Heredia, E., E-mail: heredia.edu@gmail.com [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Bojorge, C.; Casanova, J.; Cánepa, H. [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Craievich, A. [Instituto de Física, Universidade de São Paulo, Cidade Universitária, 66318 São Paulo, SP (Brazil); Kellermann, G. [Universidade Federal do Paraná, 19044 Paraná (Brazil)

    2014-10-30

    Highlights: • ZnO films synthesized by sol–gel were deposited by spin-coating on flat substrates. • Structural features of ZnO films with several thicknesses were characterized by means of different techniques. • The thicknesses of different ZnO thin films were determined by means of FESEM and AFM. • The nanoporous structures of ZnO thin films were characterized by GISAXS using IsGISAXS software. • The average densities of ZnO thin films were derived from (i) the critical angle in 1D XR patterns, (ii) the angle of Yoneda peak in 2D GISAXS images, (iii) minimization of chi2 using IsGISAXS best fitting procedure. - Abstract: ZnO thin films deposited on silica flat plates were prepared by spin-coating and studied by applying several techniques for structural characterization. The films were prepared by depositing different numbers of layers, each deposition being followed by a thermal treatment at 200 °C to dry and consolidate the successive layers. After depositing all layers, a final thermal treatment at 450 °C during 3 h was also applied in order to eliminate organic components and to promote the crystallization of the thin films. The total thickness of the multilayered films – ranging from 40 nm up to 150 nm – was determined by AFM and FESEM. The analysis by GIXD showed that the thin films are composed of ZnO crystallites with an average diameter of 25 nm circa. XR results demonstrated that the thin films also exhibit a large volume fraction of nanoporosity, typically 30–40 vol.% in thin films having thicknesses larger than ∼70 nm. GISAXS measurements showed that the experimental scattering intensity is well described by a structural model composed of nanopores with shape of oblate spheroids, height/diameter aspect ratio within the 0.8–0.9 range and average diameter along the sample surface plane in the 5–7 nm range.

  5. Dye-Sensitized Nanocrystalline ZnO Solar Cells Based on Ruthenium(II Phendione Complexes

    Directory of Open Access Journals (Sweden)

    Hashem Shahroosvand

    2011-01-01

    Full Text Available The metal complexes (RuII (phen2(phendione(PF62(1, [RuII (phen(bpy(phendione(PF62 (2, and (RuII (bpy2(phendione(PF62 (3 (phen = 1,10-phenanthroline, bpy = 2,2′-bipyridine and phendione = 1,10-phenanthroline-5,6-dione have been synthesized as photo sensitizers for ZnO semiconductor in solar cells. FT-IR and absorption spectra showed the favorable interfacial binding between the dye-molecules and ZnO surface. The surface analysis and size of adsorbed dye on nanostructure ZnO were further examined with AFM and SEM. The AFM images clearly show both, the outgrowth of the complexes which are adsorbed on ZnO thin film and the depression of ZnO thin film. We have studied photovoltaic properties of dye-sensitized nanocrystalline semiconductor solar cells based on Ru phendione complexes, which gave power conversion efficiency of (η of 1.54% under the standard AM 1.5 irradiation (100 mW cm−2 with a short-circuit photocurrent density (sc of 3.42 mA cm−2, an open-circuit photovoltage (oc of 0.622 V, and a fill factor (ff of 0.72. Monochromatic incident photon to current conversion efficiency was 38% at 485 nm.

  6. Effect of substrate temperature on structural and optical properties of spray deposited ZnO thin films

    Directory of Open Access Journals (Sweden)

    Larbah Y.

    2015-09-01

    Full Text Available Undoped ZnO thin films have been prepared on glass substrates at different substrate temperatures by spray pyrolysis method. The effect of temperature on the structural, morphological and optical properties of n-type ZnO films was studied. The X-ray diffraction (XRD results confirmed that the ZnO thin films were polycrystalline with wurtzite structure. Scanning electron microscopy (SEM measurements showed that the surface morphology of the films changed with temperature. The studies demonstrated that the ZnO film had a transmission of about 85 % and energy gap of 3.28 eV at 450 °C. The RBS measurements revealed that ZnO layers with a thickness up to 200 nm had a good stoichiometry.

  7. Hydrophobic ZnO nanostructured thin films on glass substrate by simple successive ionic layer absorption and reaction (SILAR) method

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, P. Suresh; Raj, A. Dhayal [Thin Film and Nanomaterials Laboratory, Department of Physics, Bharathiar University, Coimbatore-641046 (India); Mangalaraj, D., E-mail: dmraj800@yahoo.co [Department of Nanoscience and Technology, Bharathiar University, Coimbatore-641046 (India); Nataraj, D. [Thin Film and Nanomaterials Laboratory, Department of Physics, Bharathiar University, Coimbatore-641046 (India)

    2010-10-01

    In the present work, ZnO nanostructured thin films were grown on glass substrates by a simple successive ionic layer absorption and reaction method (SILAR) process at relatively low temperature for its self cleaning application. X-ray diffraction, scanning electron microscopy and Photoluminescence (PL) spectra were used to characterize the prepared ZnO nanostructured film. XRD pattern clearly reviles that the grown ZnO nanostructure film reflect (002) orientation with c-direction. SEM image clearly shows the surface morphology with cluster of spindle and flower-like nanostructured with diameter various around 350 nm. Photoluminescence (PL) spectra of ZnO nanostructures film exhibit a UV emission around 385nm and visible emission in the range around 420-500 nm. Good water repellent behavior were observed for ZnO nanostructured film without any surface modification.

  8. Effect of working pressure and temperature on ZnO film deposited on free-standing diamond substrates

    Institute of Scientific and Technical Information of China (English)

    ZHAO Ping; XIA Yi-ben; WANG Lin-jun; LIU Jian-min; XU Run; PENG Hong-yan; SHI Wei-min

    2006-01-01

    The structure characteristic and electric performance of ZnO film deposited on nucleation side of free-standing diamond substrates under different heating temperatures (Th) of substrate and working pressures (p) were studied. The structure of the ZnO films tested by X-ray diffraction shows that ZnO film of high c-axis orientation is deposited on the nucleation side of free-standing diamond substrate which is extremely smooth when Th=250 ℃ and p=0.4 Pa. After annealing at 480 ℃ in N2 atmosphere,the SEM and the AFM analyses demonstrate that the c-axis orientation of ZnO film is obviously enhanced. The resistivity of ZnO films also increases up to 8×105 Ω·cm which is observed by I-V test.

  9. Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Z. [South China Normal University, School of Physics and Telecommunication Engineering, Guangzhou (China); Xu, J. [Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, P.O. Box 800-211, Shanghai (China)

    2007-09-15

    The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire ({alpha}-Al{sub 2}O{sub 3}) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 C for 1 h in air. (orig.)

  10. Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films

    Institute of Scientific and Technical Information of China (English)

    XU Jin; ZHANG Zi-Yu; ZHANG Yang; LIN Bi-Xia; FU Zhu-Xi

    2005-01-01

    @@ ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002 % on the photoluminescence and current-voltage (Ⅰ - Ⅴ) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23 eV and a remarkable red shift of the visible broadband at room temperature. The Ⅰ - Ⅴ characteristics of ZnO/p-Si hetero junctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.

  11. Pulsed laser deposition of piezoelectric ZnO thin films for bulk acoustic wave devices

    Energy Technology Data Exchange (ETDEWEB)

    Serhane, Rafik, E-mail: rserhane@cdta.dz [Centre for Development of Advanced Technologies, Cité 20 Août 1956, Baba Hassen, BP: 17, DZ-16303 Algiers (Algeria); Abdelli-Messaci, Samira; Lafane, Slimane; Khales, Hammouche; Aouimeur, Walid [Centre for Development of Advanced Technologies, Cité 20 Août 1956, Baba Hassen, BP: 17, DZ-16303 Algiers (Algeria); Hassein-Bey, Abdelkadder [Centre for Development of Advanced Technologies, Cité 20 Août 1956, Baba Hassen, BP: 17, DZ-16303 Algiers (Algeria); Micro and Nano Physics Group, Faculty of Sciences, University Saad Dahlab of Blida (USDB), BP. 270, DZ-09000 Blida (Algeria); Boutkedjirt, Tarek [Equipe de Recherche Physique des Ultrasons, Faculté de Physique, Université des Sciences et de la Technologie Houari Boumediene (USTHB), BP 32, El-Alia, Bab-Ezzouar, DZ-16111 Algiers (Algeria)

    2014-01-01

    Piezoelectric properties of ZnO thin films have been investigated for micro-electro-mechanical systems (MEMS). Wurtzite ZnO structure was prepared on different substrates (Si (1 0 0), Pt (1 1 1)/Ti/SiO{sub 2}/Si and Al (1 1 1)/SiO{sub 2}/Si) at different substrate temperatures (from 100 to 500 °C) by a pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) characterization showed that the ZnO films were highly c-axis (0 0 2) oriented, which is of interest for various piezoelectric applications. Scanning electron microscopy (SEM) showed evidence of honeycomb-like structure on the surface and columnar structure on the cross-section. In the case of ZnO on Al, ZnO exhibited an amorphous phase at the ZnO/Al interface. The XRD measurements indicated that the substrate temperature of 300 °C was the optimum condition to obtain high quality (strongest (0 0 2) peak with the biggest associated grain size) of crystalline ZnO on Pt and on Al and that 400 °C was the optimum one on Si. ZnO on Al exhibits smallest rocking curve width than on Pt, leading to better crystalline quality. The ZnO films were used in bulk acoustic wave (BAW) transducer. Electrical measurements of the input impedance and S-Parameters showed evidence of piezoelectric response. The electromechanical coupling coefficient was evaluated as K{sub eff}{sup 2}=5.09%, with a quality factor Q{sub r} = 1001.4.

  12. Preparation and gas-sensing property of parallel-aligned ZnO nanofibrous films

    Indian Academy of Sciences (India)

    Zikui Bai; Weilin Xu; Changsheng Xie; Mingchao Dong; Shunping Zhang; Jie Xu; Shili Xiao

    2013-08-01

    Parallel-aligned zinc oxide (ZnO) nanofibrous films fabricated by using electrospinning technique were used in gas sensors for the detection of ethanol and formaldehyde. The morphologies and crystal structures of the films were characterized by field-emission scanning electron microscopy (FE–SEM) and X-ray diffraction (XRD), respectively. FE–SEM results showed that ZnO nanofibres had an approximate diameter of 100–300 nm and consisted of hexagonal wurtzite structure ZnO nanocrystals with a primary particle diameter of 20–50 nm. The results of resistance–temperature characteristics and responses to ethanol and formaldehyde indicated that the parallelaligned ZnO nanofibrous film had a low activation energy (0.246 eV), a low optimum operating temperature and a high response. The response and recovery had a high rate in the initial stage and a low rate in the later stage. The parallel-aligned ZnO nanofibrous film had excellent potential application for formaldehyde sensor.

  13. Dopant-induced modifications in structural and optical properties of ZnO thin films prepared by PLD

    Science.gov (United States)

    Hashmi, Jaweria Z.; Siraj, K.; Naseem, S.; Shaukat, S.

    2016-09-01

    The objective of the present work is to study the effect of yttrium doping concentration on the microstructure and optical behavior of ZnO thin films, deposited by pulsed laser deposition on silicon (001) substrates. The microstructural analysis of doped ZnO thin films shows columnar growth of the ZnO (002) plane under tensile stress, confirmed by Raman shifts of the E2 (high) mode. The optical properties are investigated by using a spectroscopic ellipsometer. Undoped and yttrium-doped ZnO films show high transparency in the visible region, and the estimated optical band gap energy is randomly shifted in the range 2.93-3.1 eV by increasing the yttrium doping level. Yttrium doping in ZnO is limited, which means that at doping concentrations higher than 3 wt.% of yttrium, the structural and optical properties show a shift towards those of undoped ZnO.

  14. Construction of (001) facets exposed ZnO nanosheets on magnetically driven cilia film for highly active photocatalysis

    Science.gov (United States)

    Peng, Fengping; Zhou, Qiang; Lu, Chunhua; Ni, Yaru; Kou, Jiahui; Xu, Zhongzi

    2017-02-01

    ZnO nanosheet arrays with exposed (001) facets have been constructed onto a biomimetic inner-motile film, using a seed-mediated hydrothermal growth technology without adding capping agents. The growth of ZnO nanoparticles along the [001] direction is impeded because of a physical steric hindrance, and therefore (001) planes are left behind as the dominant crystal facets. In comparison to ZnO nanorod arrays film, the photocatalytic activity of the actuated (001) facets exposed ZnO nanosheet arrays film is dramatically improved to approximately 2.48 times. Moreover, when it is subjected to a rotational magnetic field, the ZnO nanosheet arrays film is driven to mimic ciliary motion like nature beating cilia, which can boost the interior mass transfer and help to promote release of active sites for improving the photocatalytic activity. As a consequence of the exposed (001) high active facets, the singular ability of microfluidic manipulation has greater effect on ZnO nanosheet arrays films. The enhancement of photocatalytic activity of the actuated ZnO nanosheet arrays film is much more than that of ZnO nanorod arrays film.

  15. Ultra violet sensors based on nanostructured ZnO spheres in network of nanowires: a novel approach

    Directory of Open Access Journals (Sweden)

    Luykx A

    2007-01-01

    Full Text Available AbstractThe ZnO nanostructures consisting of micro spheres in a network of nano wires were synthesized by direct vapor phase method. X-ray Photoelectron Spectroscopy measurements were carried out to understand the chemical nature of the sample. ZnO nanostructures exhibited band edge luminescence at 383 nm. The nanostructure based ZnO thin films were used to fabricate UV sensors. The photoresponse measurements were carried out and the responsivity was measured to be 50 mA W−1. The rise and decay time measurements were also measured.

  16. Fabrication and Characterization of High-Crystalline Nanoporous ZnO Thin Films by Modified Thermal Evaporation System

    Science.gov (United States)

    Islam, M. S.; Hossain, M. F.; Razzak, S. M. A.; Haque, M. M.; Saha, D. K.

    2016-05-01

    The aim of this work is to fabricate high-crystalline nanoporous zinc oxide (ZnO) thin films by a modified thermal evaporation system. First, zinc thin films have been deposited on bare glass substrate by the modified thermal evaporation system with pressure of 0.05mbar, source-substrate distance of 3cm and source temperature 700∘C. Then, high-crystalline ZnO thin film is obtained by annealing at 500∘C for 2h in atmosphere. The prepared ZnO films are characterized with various deposition times of 10min and 20min. The structural property was investigated by X-ray diffractometer (XRD). The optical bandgap and absorbance/transmittance of these films are examined by ultraviolet/visible spectrophotometer. The surface morphological property has been observed by scanning electron microscope (SEM). ZnO films have showed uniform nanoporous surface with high-crystalline hexagonal wurtzite structure. The ZnO films prepared with 20min has excitation absorption-edge at 369nm, which is blueshifted with respect to the bulk absorption-edge appearing at 380nm. The gap energy of ZnO film is decreased from 3.14eV to 3.09eV with increase of the deposition time, which can enhance the excitation of ZnO films by the near visible light, and is suitable for the application of photocatalyst of waste water cleaning and polluted air purification.

  17. CdS quantum dots sensitized Cu doped ZnO nanostructured thin films for solar cell applications

    Science.gov (United States)

    Poornima, K.; Gopala Krishnan, K.; Lalitha, B.; Raja, M.

    2015-07-01

    ZnO nanorods and Cu doped ZnO nanorods thin films have been prepared by simple hydrothermal method. CdS quantum dots are sensitized with Cu doped ZnO nanorod thin films using successive ionic layer adsorption and reaction (SILAR) method. The X-ray diffraction study reveals that ZnO nanorods, and CdS quantum dot sensitized Cu doped ZnO nanorods exhibit hexagonal structure. The scanning electron microscope image shows the presence of ZnO nanorods. The average diameter and length of the aligned nanorod is 300 nm and 1.5 μm respectively. The absorption spectra shows that the absorption edge of CdS quantum dot sensitized ZnO nanorod thin film is shifted toward longer wavelength region when compared to the absorption edge of ZnO nanorods film. The conversion efficiency of the CdS quantum dot sensitized Cu doped ZnO nanorod thin film solar cell is 1.5%.

  18. Structural, optical and electronic properties of Fe doped ZnO thin films

    Science.gov (United States)

    Singh, Karmvir; Devi, Vanita; Dhar, Rakesh; Mohan, Devendra

    2015-09-01

    Fe doped ZnO thin films have been deposited by pulsed laser deposition technique on quartz substrate to study structural, optical and electronic structure using XRD, AFM, UV-visible and X-ray absorption spectroscopy. XRD study reveals that Fe doping has considerable effect on stress, strain, grain size and crystallinity of thin films. UV-visible study determines that band gap of pristine ZnO decreases with Fe doping, which can be directly correlated to transition tail width and grain size. Change in electronic structure with Fe doping has been examined by XAS study.

  19. Physical and electrochemical properties of ZnO films fabricated from highly cathodic electrodeposition potentials

    Science.gov (United States)

    Ismail, Abdul Hadi; Abdullah, Abdul Halim; Sulaiman, Yusran

    2017-03-01

    The physical and electrochemical properties of zinc oxide (ZnO) film electrode that were prepared electrochemically were studied. ZnO was electrodeposited on ITO glass substrate by applying three different highly cathodic potentials (-1.3 V, -1.5 V, -1.7 V) in a solution containing 70 mM of Zn(NO3)2.xH2O and 0.1 M KCl with bath temperatures of 70 °C and 80 °C. The presence of ZnO was asserted from XRD analysis where the corresponding peaks in the spectra were assigned. SEM images revealed the plate-like hexagonal morphology of ZnO which is in agreement with the XRD analysis. The areal capacitance of the ZnO was observed to increase when the applied electrodeposition potential is increased from -1.3 V to -1.5 V. However, the areal capacitance is found to decrease when the applied electrodeposition potential is further increased to -1.7 V. The resistance of charge transfer (Rct) of the ZnO decreased when the applied electrodeposition potential varies from -1.3 V to -1.7 V due to the decreased particle size of ZnO when more cathodic electrodeposition potential is applied.

  20. Theoretical study of the multiferroic properties in M-doped (M=Co, Cr, Mg) ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bahoosh, S.G. [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Apostolov, A.T. [University of Architecture, Civil Engineering and Geodesy, Faculty of Hydrotechnics, Department of Physics, 1, Hristo Smirnenski Blvd., 1046 Sofia (Bulgaria); Apostolova, I.N. [University of Forestry, Faculty of Forest Industry, 10, Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria); Trimper, S. [Institute of Physics, Martin-Luther-University, D-06099 Halle (Germany); Wesselinowa, Julia M. [University of Sofia, Department of Physics, Blvd. J. Bouchier 5, 1164 Sofia (Bulgaria)

    2015-01-01

    The origin of multiferroism is still an open problem in ZnO. We propose a microscopic model to clarify the occurrence of multiferroism in this material. Using Green's function technique we study the influence of ion doping and size effects on the magnetization and polarization of ZnO thin films. The calculations for magnetic Co- and Cr-ions are based on the s–d model, the transverse Ising model in terms of pseudo-spins and a biquadratic magnetoelectric coupling, whereas in case of nonmagnetic Mg-ions the model takes into account the Coulomb interaction and an indirect coupling between the pseudo-spins via the conduction electrons. We show that the magnetization M exhibits a maximum for a fixed concentration of the doping ions. Furthermore M increases with decreasing film thickness N. The polarization increases with increasing concentration of the dopant and decreasing N. The results are in good agreement with the experimental data. - Highlights: • The paper analyzes the multiferroic properties of doped ZnO thin films by a microscopic model. • The magnetization exhibits a maximum at a fixed doping concentration. • The polarization increases with growing dopant concentration. • The ferroelectric transition temperature is enhanced for increasing dopant concentration.

  1. Experimental Studies on Doped and Co-Doped ZnO Thin Films Prepared by RF Diode Sputtering

    OpenAIRE

    2009-01-01

    Our research on the growing and characterizing of p-type ZnO thin films, prepared by radio frequency (RF) diode sputtering, mono-doped with nitrogen, and co-doped with aluminium and nitrogen, is a response of the need from p-type ZnO thin films for device applications. The dopants determine the conductivity type of the film and its physical properties. We obtained p-type ZnO thin films by RF diode sputtering and using a nitrogen dopant source. The novelty in our approach is in the use of a pl...

  2. Study of structural and optical properties of ZnO films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lemlikchi, S., E-mail: lemlikchi_safo@yahoo.fr [Advanced Technology Development Centre, Cite 20 Aout 1956 BP 17 Baba Hassen, Algiers (Algeria); Abdelli-Messaci, S.; Lafane, S.; Kerdja, T. [Advanced Technology Development Centre, Cite 20 Aout 1956 BP 17 Baba Hassen, Algiers (Algeria); Guittoum, A.; Saad, M. [Nuclear Research Centre of Algiers, 2 Bd Frantz-Fanon, Algiers (Algeria)

    2010-07-01

    Wurtzite zinc oxides films (ZnO) were deposited on silicon (0 0 1) and corning glass substrates using the pulsed laser deposition technique. The laser fluence, target-substrate distance, substrate temperature of 300 deg. C were fixed while varying oxygen pressures from 2 to 500 Pa were used. It is observed that the structural properties of ZnO films depend strongly on the oxygen pressure and the substrate nature. The film crystallinity improves with decreasing oxygen pressure. At high oxygen pressure, the films are randomly oriented, whereas, at low oxygen pressures they are well oriented along [0 0 1] axis for Si substrates and along [1 0 3] axis for glass substrates. A honeycomb structure is obtained at low oxygen pressures, whereas microcrystalline structures were obtained at high oxygen pressures. The effect of oxygen pressure on film transparency, band gap E{sub g} and Urbach energies was investigated.

  3. Microstructure and optical properties of nitrogen-doped ZnO film

    Institute of Scientific and Technical Information of China (English)

    Zhao Xian-Wei; Gao Xiao-Yong; Chen Xian-Mei; Chen Chao; Zhao Meng-Ke

    2013-01-01

    The nitrogen doping of ZnO film deposited by the magnetron sputtering method is subsequently realized by the hydrothermal synthesis method.The nitrogen-doped ZnO film is preferably (002) oriented.With the increase of hexamethylenetetramine (HMT) solution concentration,the average grain size of the film along the 〈002〉 direction almost immediately decreases and then monotonously increases,conversely,the lattice strain first increases and then decreases.The structural evolution of the film surface from compact and even to sparse and rough is attributed to the enhanced nitrogen doping content in the hydrothermal process.The transmission and photoluminescence properties of the film are closely related to grain size,lattice strain,and nitrogen-related defect arising from the enhanced nitrogen doping content with HMT concentration increasing.

  4. Preparation and characterization of nanostructured ZnO thin films for photoelectrochemical splitting of water

    Indian Academy of Sciences (India)

    Monika Gupta; Vidhika Sharma; Jaya Shrivastava; Anjana Solanki; A P Singh; V R Satsangi; S Dass; Rohit Shrivastav

    2009-02-01

    Nanostructured zinc oxide thin films (ZnO) were prepared on conducting glass support (SnO2: F overlayer) via sol–gel starting from colloidal solution of zinc acetate 2-hydrate in ethanol and 2-methoxy ethanol. Films were obtained by spin coating at 1500 rpm under room conditions (temperature, 28–35°C) and were subsequently sintered in air at three different temperatures (400, 500 and 600°C). The evolution of oxide coatings under thermal treatment was studied by glancing incidence X-ray diffraction and scanning electron microscopy. Average particle size, resistivity and bandgap energy were also determined. Photoelectrochemical properties of thin films and their suitability for splitting of water were investigated. Study suggests that thin films of ZnO, sintered at 600°C are better for photoconversion than the films sintered at 400 or 500°C. Plausible explanations have been provided.

  5. Structural characterization of supported nanocrystalline ZnO thin films prepared by dip-coating

    Energy Technology Data Exchange (ETDEWEB)

    Casanova, J.R. [CITEDEF-CINSO-CONICET Centro de Investigaciones en Solidos, Juan B. de La Salle 4397, B1603ALO, Villa Martelli, Buenos Aires (Argentina); Heredia, E.A., E-mail: eheredia@citedef.gob.ar [CITEDEF-CINSO-CONICET Centro de Investigaciones en Solidos, Juan B. de La Salle 4397, B1603ALO, Villa Martelli, Buenos Aires (Argentina); Bojorge, C.D.; Canepa, H.R. [CITEDEF-CINSO-CONICET Centro de Investigaciones en Solidos, Juan B. de La Salle 4397, B1603ALO, Villa Martelli, Buenos Aires (Argentina); Kellermann, G. [Departamento de Fisica, Universidade Federal do Parana, Curitiba, PR (Brazil); Craievich, A.F. [Instituto de Fisica, Universidade de Sao Paulo, Cidade Universitaria, Sao Paulo, SP (Brazil)

    2011-09-15

    Nanocrystalline ZnO thin films prepared by the sol-gel dip-coating technique were characterized by grazing incidence X-ray diffraction (GIXD), atomic force microscopy (AFM), X-ray reflectivity (XR) and grazing incidence small-angle X-ray scattering (GISAXS). The structures of several thin films subjected to (i) isochronous annealing at 350, 450 and 550 deg. C, and (ii) isothermal annealing at 450 deg. C during different time periods, were characterized. The studied thin films are composed of ZnO nanocrystals as revealed by analysing several GIXD patterns, from which their average sizes were determined. Thin film thickness and roughness were determined from quantitative analyses of AFM images and XR patterns. The analysis of XR patterns also yielded the average density of the studied films. Our GISAXS study indicates that the studied ZnO thin films contain nanopores with an ellipsoidal shape, and flattened along the direction normal to the substrate surface. The thin film annealed at the highest temperature, T = 550 deg. C, exhibits higher density and lower thickness and nanoporosity volume fraction, than those annealed at 350 and 450 deg. C. These results indicate that thermal annealing at the highest temperature (550 deg. C) induces a noticeable compaction effect on the structure of the studied thin films.

  6. Screen printed nanosized ZnO thick film

    Indian Academy of Sciences (India)

    Bindu Krishnan; V P N Nampoori

    2005-06-01

    Nanosized ZnO was prepared by polyol synthesis. Fluorescence spectrum of the ZnO colloid at varying pump intensities was studied. The powder was extracted and characterized by XRD and BET. The extracted powder was screen printed on glass substrates using ethyl cellulose as binder and turpinol as solvent. Coherent back scattering studies were performed on the screen printed sample which showed evidence of weak localization. The screen printed pattern showed strong UV emission.

  7. Effect of temperature on the deposition of ZnO thin films by successive ionic layer adsorption and reaction

    Science.gov (United States)

    Shei, Shih-Chang; Lee, Pay-Yu; Chang, Shoou-Jinn

    2012-08-01

    In this study, ZnO thin films were deposited on glass substrates by the successive ionic layer adsorption and reaction (SILAR) method, and the effect of the temperature treatment in ethylene glycol on the crystal structure, surface morphology, and optical properties of the films were investigated. When the temperature was below 85 °C, the ZnO films showed poor optical transmission and had a rough surface crystal structure. As the temperature was increased, dense polycrystalline films with uniform ZnO grain distribution were obtained. The optical transmittance of the ZnO thin films fabricated at temperatures greater than 95 °C was very high (90%) in the visible-light region. Therefore, it could be concluded that increasing the temperature of treatment in ethylene glycol helps in obtaining fine-grained ZnO films with a high growth rate and a low concentration of oxygen vacancies. However, temperatures greater than 145 °C led to shedding of ZnO from the surface and a reduction in the growth rate. Thus, temperature treatment was confirmed to play an important role in ZnO film deposition instead of post thermal annealing after the film growth.

  8. Epitaxial growth of ZnO thin films on AlN substrates deposited at low temperature by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Rahmane, S.; Soussou, A.; Gautron, E.; Jouan, P.Y.; Le Brizoual, L.; Barreau, N.; Djouadi, M.A. [Institut des Materiaux Jean Rouxel -IMN-, UMR CNRS 6502, Nantes (France); Abdallah, B. [Institut des Materiaux Jean Rouxel -IMN-, UMR CNRS 6502, Nantes (France); Atomic Energy Commission Syrian (AECS), Damascus (Syria); Soltani, A. [IEMN, UMR CNRS 8520, USTL, Villeneuve d' Ascq (France)

    2010-07-15

    Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by DC and RF reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon ZnO substrate. For a second set, ZnO films were deposited on AlN substrate. X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) analysis of the synthesized AlN film on ZnO buffer layer have shown some amorphous zones close to the interface followed by a nanocrystalline layer exhibiting (10-10) and (0002) orientations of the hexagonal AlN crystalline phase. At the top of the film, a relatively well-crystallized layer with a single (0002) orientation has been observed. We have related the relatively bad interface to the presence of oxygen coming from ZnO substrate. This behaviour was different for the growth of ZnO film when AlN was used as substrate. In fact, we have observed thanks to HRTEM images and selected area electron diffraction patterns, that the ZnO film deposited on AlN substrate exhibits an epitaxial growth which is strongly dependent on the crystalline quality of AlN film. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  9. ZnO micro-nano composite hydrophobic film prepared by the three-step method

    Science.gov (United States)

    Ma, Kai; Li, Hua; Zhang, Han; Xu, Xiao-Liang; Gong, Mao-Gang; Yang, Zhou

    2009-05-01

    The hydrophobicity of the lotus leaf is mainly due to its surface micro-nano composite structure. In order to mimic the lotus structure, ZnO micro-nano composite hydrophobic films were prepared via the three-step method. On thin buffer films of SiO2, which were first fabricated on glass substrates by the sol-gel dip-coating method, a ZnO seed layer was deposited via RF magnetron sputtering. Then two different ZnO films, micro-nano and micro-only flower-like structures, were grown by the hydrothermal method. The prepared films have different hydrophobic properties after surface modification. The structures of the obtained ZnO films were characterized using x-ray diffraction and field-emission scanning electron microscopy. A conclusion that a micro-nano composite structure is more beneficial to hydrophobicity than a micro-only structure was obtained through research into the effect of structure on hydrophobic properties.

  10. ZnO micro-nano composite hydrophobic film prepared by the three-step method

    Institute of Scientific and Technical Information of China (English)

    Ma Kai; Li Hua; Zhang Han; Xu Xiao-Liang; Gong Mao-Gang; Yang Zhou

    2009-01-01

    The hydrophobicity of the lotus leaf is mainly due to its surface micro-nano composite structure. In order to mimic the lotus structure, ZnO micro-nano composite hydrophobic films were prcpared via the three-step method. On thin buffer films of SiO2, which were first fabricated on glass substrates by the sol gel dip-coating method, a ZnO seed layer was deposited via RF magnetron sputtering. Then two different ZnO films, micro-nano and micro-only flower-like structures, were grown by the hydrothermal method. The prepared films have different hydrophobic properties after surface modification. The structures of the obtained ZnO films were characterized using x-ray diffraction and field-emission scanning electron microscopy. A conclusion that a micro-nano composite structure is more beneficial to hydrophobicity than a micro-only structure was obtained through research into the effect of structure on hydrophobic properties.

  11. Electrical properties of silver Schottky contacts to ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    LI Xin-kun; LI Qing-shan; LIANG De-chun; XU Yan-dong

    2009-01-01

    ZnO thin films are deposited on Al/Si substrates by the pulsed laser deposition (PLD) method. The XRD and SEM images of films are examined. Highly c-axis oriented ZnO thin films which have uniform compact surface morphology are fabricated. The size of surface grains is about 30 nm. The Schottky barrier ultraviolet detectors with silver Schottky contacts are made on ZnO thin films. The current-voltage characteristics are measured. The ideality contact factor between Ag and ZnO film is 1.22, while the barrier height is 0.908 e V. After annealing at 600 ℃ for 2h, the ideafity factor is 1.18 and the barrier height is 0.988 eV. With the illumination of 325 nm wavelength UV-light, the photocurrent-to-dark current ratios before and after annealing are 140.4 and 138.4 biased at 5 V, respectively. The photocurrents increase more than two orders of magnitude over the dark currents.

  12. Influence of process parameters on band gap of AI-doped ZnO film

    Institute of Scientific and Technical Information of China (English)

    Diqiu HUANG; Xiangbin ZENG; Yajuan ZHENG; Xiaojin WANG; Yanyan YANG

    2013-01-01

    This paper presents the influence of process parameters, such as argon (Ar) flow rate, sputtering power and substrate temperature on the band gap of Al-doped ZnO film, Al-doped ZnO thin films were fabricated by radio frequency (RF) magnetron sputtering technology and deposited on polyimide and glass substrates. Under different Ar flow rates varied from 30 to 70 sccm, the band gap of thin films were changed from 3.56 to 3.67 eV. As sputtering power ranged from 125 to 200 W, the band gap was varied from 3.28 to 3.82 eV; the band gap was between 3.41 and 3.88 eV as substrate temperature increases from 150℃ to 300℃. Furthermore, the correlation between carrier concentration and band gap was investigated by HALL. These results demonstrate that the band gap of the Al-doped ZnO thin film can be adjusted by changing the Ar flow rate, sputtering power and substrate temperature, which can improve the performance of semiconductor devices related to Al-doped ZnO thin film.

  13. Conductivity of ZnO nanowires, nanoparticles, and thin films using time-resolved terahertz spectroscopy.

    Science.gov (United States)

    Baxter, Jason B; Schmuttenmaer, Charles A

    2006-12-21

    The terahertz absorption coefficient, index of refraction, and conductivity of nanostructured ZnO have been determined using time-resolved terahertz spectroscopy, a noncontact optical probe. ZnO properties were measured directly for thin films and were extracted from measurements of nanowire arrays and mesoporous nanoparticle films by applying Bruggeman effective medium theory to the composite samples. Annealing significantly reduces the intrinsic carrier concentration in the ZnO films and nanowires, which were grown by chemical bath deposition. The complex-valued, frequency-dependent photoconductivities for all morphologies were found to be similar at short pump-probe delay times. Fits using the Drude-Smith model show that films have the highest mobility, followed by nanowires and then nanoparticles, and that annealing the ZnO increases its mobility. Time constants for decay of photoinjected electron density in films are twice as long as those in nanowires and more than 5 times those for nanoparticles due to increased electron interaction with interfaces and grain boundaries in the smaller-grained materials. Implications for electron transport in dye-sensitized solar cells are discussed.

  14. Manufacturing of patterned ZnO films with application for photoinitiated decolorization of malachite green in aqueous solutions

    Indian Academy of Sciences (India)

    Nina V Kaneva; Georgi G Yordanov; Ceco D Dushkin

    2010-04-01

    Patterned thin films, ZnO, are successfully prepared on glass substrates by the sol–gel method using dip-coating technique. The films, formed of ZnO nanocrystallites with hexagonal crystal structure, are characterized by means of scanning electron microscopy, Fourier transform infrared spectroscopy and X-ray diffraction. The as obtained ZnO films are studied with respect to photo-initiated bleaching of malachite green in aqueous solutions. The bleaching process is investigated at various initial concentrations of malachite green in the aqueous solutions by using ZnO films of different thicknesses. The obtained results are promising for the development of ZnO photocatalysts by the sol–gel method.

  15. Effects of Annealing Temperature on Properties of ZnO Thin Films Grown by Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    ZHUANG Hui-zhao; XUE Shou-bin; XUE Cheng-shan; HU Li-jun; LI Bao-li; ZHANG Shi-ying

    2007-01-01

    ZnO thin films are deposited on n-Si(111) substrates by pulsed laser deposition(PLD) system.Then the samples are annealed at different temperatures in air ambient and their properties are investigated particularly as a function of annealing temperature.The microstructure,morphology and optical properties of the as-grown ZnO films are studied by X-ray diffraction(XRD),atomic force microscope(AFM),Fourier transform infrared spectroscopy(FTIR) and photoluminescence(PL) spectra.The results show that the as-grown ZnO films have a hexagonal wurtzite structure with a preferred c-axis orientation.Moreover,the diameters of the ZnO crystallites become larger and the crystal quality of the ZnO films is improved with the increase of annealing temperature.

  16. Effect of metal-ion doping on the optical properties of nanocrystalline ZnO thin films

    Science.gov (United States)

    Mendoza-Galván, A.; Trejo-Cruz, C.; Lee, J.; Bhattacharyya, D.; Metson, J.; Evans, P. J.; Pal, U.

    2006-01-01

    Optical properties of metal (Al, Ag, Sb, and Sn)-ion-implanted ZnO films have been studied by ultraviolet-visible spectroscopy and spectroscopic ellipsometric techniques. The effects of metal-ion doping on the optical band gap (Eg), refractive index (n), and extinction coefficient (k) of nanocrystalline ZnO films have been studied for the similar implantation dose of all the metal ions. The ellipsometric spectra of the ion-implanted samples could be well described by considering an air/roughness/ZnO-M (layer 1)/ZnO (layer 2)/glass model. The band gap of ZnO films increases with Al ion doping and decreases with doping of Ag, Sb, and Sn ions. The refractive index of ZnO films in the visible spectral region increases substantially on Sb and Sn ion doping, while it decreases to some extent with Al ion doping.

  17. Preparation of Ni doped ZnO thin films by SILAR and their characterization

    Science.gov (United States)

    Mondal, S.; Mitra, P.

    2013-02-01

    Pure and nickel (Ni) doped zinc oxide (NZO) thin films were deposited on glass substrates from ammonium zincate bath using successive ion layer adsorption and reaction (SILAR). Characterization techniques such as XRD, TEM, SEM and EDX were utilized to investigate the effect of Ni doping on the microstructure of Ni:ZnO thin films. Structural characterization by X-ray diffraction reveals the polycrystalline nature of the films. Particle size shows slightly decreasing trend with increasing nickel impurification. The average particle size for pure ZnO is 22.75 nm and it reduces to 20.51 nm for 10 % Ni doped ZnO. Incorporation of Ni was confirmed from elemental analysis using EDX. The value of fundamental absorption edge is 3.23 eV for pure ZnO and it decreases to 3.19 eV for 10 % Ni:ZnO. The activation energy barrier value to electrical conduction process increases from 0.261 eV for pure ZnO to 0.293 eV for 10 % Ni doped ZnO.

  18. Nanoscale heterogeniety and workfunction variations in ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Anirudh [Flinders Centre for NanoScale Science and Technology, Flinders University, PO Box 2100, Adelaide 5001, SA (Australia); Max Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128 (Germany); Untch, Maria [Max Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128 (Germany); Quinton, Jamie S. [Flinders Centre for NanoScale Science and Technology, Flinders University, PO Box 2100, Adelaide 5001, SA (Australia); Berger, Rüdiger, E-mail: berger@mpip-mainz.mpg.de [Max Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128 (Germany); Andersson, Gunther; Lewis, David A. [Flinders Centre for NanoScale Science and Technology, Flinders University, PO Box 2100, Adelaide 5001, SA (Australia)

    2016-02-15

    Graphical abstract: - Highlights: • Quantitative insight in lateral work function distribution was obtained. • Ramp-annealed ZnO exhibits two electronically distinct nanoscale regions. • Comparative UPS and KPFM studies were performed to measure work function of heterogeneous surface. - Abstract: Nano-roughened, sol–gel derived polycrystalline ZnO thin films prepared by a thermal ramping procedure were found to exhibit different work function values on a sub-micrometer scale. By Kelvin probe force microscopy (KPFM) two distinct nanoscale regions with work function differing by over 0.1 eV were detected which did not coincide with the nano-roughened surface topography. In contrast, a flat ZnO surface displayed a single, uniform distribution. Ultraviolet photoelectron spectroscopy (UPS) studies showed that the average workfunction across a flat ZnO surface was 3.7 eV while ZnO with a nano-roughened morphology had a lower workfunction of 3.4 eV with indications of electronic heterogeneity across the surface, supporting the KPFM results. Scanning Auger Nanoprobe measurements showed that the chemical composition was uniform across the surface in all samples, suggesting the work function heterogeneity was due to variations in crystallinity or crystal orientation on the surface of these thin films. Such heterogeneity in the electronic properties of materials in thin film devices can significantly influence the interfacial charge transport across materials.

  19. Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

    OpenAIRE

    Saurdi, I.; Mamat, M. H.; M. F. Malek; M. Rusop

    2014-01-01

    Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm), high average transmittance (96%) in visible region, and good resistivity 7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtai...

  20. Optical properties of Mn doped ZnO films and wires synthesized by thermal oxidation of ZnMn alloy

    Energy Technology Data Exchange (ETDEWEB)

    Sima, M., E-mail: msima@infim.ro [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania); Mihut, L. [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania); Vasile, E. [University “Politehnica”of Bucharest, Faculty of Applied Chemistry and Material Science, Department of Oxide Materials and Nanomaterials, No. 1-7 Gh. Polizu Street, 011061 Bucharest (Romania); Sima, Ma.; Logofatu, C. [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania)

    2015-09-01

    Mn doped ZnO films and wires, having different manganese concentrations were synthesized by thermal oxidation of the corresponding ZnMn alloy films and wires electrodeposited on a gold substrate. Structural and optical properties were addressed with scanning electron microscopy, X-ray diffraction (XRD), Raman scattering and photoluminescence (PL). To estimate the manganese concentration in Mn doped ZnO films, X-ray photoelectron spectroscopy was used. XRD patterns indicate that the incorporation of Mn{sup 2+} ions into the Zn{sup 2+} site of ZnO lattice takes place. Quenching of the ZnO PL appears due to Mn{sup 2+} ions in the ZnO lattice. Moreover, a significant decrease in the green emission of ZnO is reported in the case of the Mn doped ZnO wire array with a Mn concentration of 1.45%. The wurtzite ZnO has a total of 12 phonon modes, namely, one longitudinal acoustic (LA), two transverse acoustic (TA), three longitudinal optical (LO), and six transverse optical branches. Compared to the undoped ZnO, a gradual up-shift of the Raman lines assigned to the 2LA and A{sub 1} (LO) vibrational modes, from 482 and 567 cm{sup −1} to 532 and 580 cm{sup −1}, respectively, takes place for the Mn doped ZnO films having a Mn concentration between 2 and 15%. Additionally, in the case of the Mn doped ZnO films with 7 and 15% Mn concentration, Raman spectra show the appearance and increase in the relative intensity of the ZnO Raman line assigned to the TA + LO vibrational mode in the 600–750 cm{sup −1} spectral range. For the Mn-doped ZnO wires, the presence of the Raman line peaking at 527 cm{sup −1} confirms the insertion of Mn{sup 2+} ions in ZnO lattice. - Highlights: • Mn doped ZnO films and wires grown by thermal oxidation of ZnMn alloy • Incorporation of Mn{sup 2+} ions into Zn{sup 2+} site of ZnO lattice • Appearance of a strong Raman line in the spectral range 600–800 cm{sup −1} at high Mn concentration • Compensation of the oxygen vacancy at higher

  1. A comparative study of physico-chemical properties of CBD and SILAR grown ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jambure, S.B.; Patil, S.J.; Deshpande, A.R.; Lokhande, C.D., E-mail: l_chandrakant@yahoo.com

    2014-01-01

    Graphical abstract: Schematic model indicating ZnO nanorods by CBD (Z{sub 1}) and nanograins by SILAR (Z{sub 2}). - Highlights: • Simple methods for the synthesis of ZnO thin films. • Comparative study of physico-chemical properties of ZnO thin films prepared by CBD and SILAR methods. • CBD outperforms SILAR method. - Abstract: In the present work, nanocrystalline zinc oxide (ZnO) thin films have been successfully deposited onto glass substrates by simple and economical chemical bath deposition (CBD) and successive ionic layer adsorption reaction (SILAR) methods. These films were further characterized for their structural, optical, surface morphological and wettability properties. The X-ray diffraction (XRD) patterns for both CBD and SILAR deposited ZnO thin films reveal the highly crystalline hexagonal wurtzite structure. From optical studies, band gaps obtained are 2.9 and 3.0 eV for CBD and SILAR deposited thin films, respectively. The scanning electron microscope (SEM) patterns show growth of well defined randomly oriented nanorods and nanograins on the CBD and SILAR deposited samples, respectively. The resistivity of CBD deposited films (10{sup 2} Ω cm) is lower than that of SILAR deposited films (10{sup 5} Ω cm). Surface wettability studies show hydrophobic nature for both films. From the above results it can be concluded that CBD grown ZnO thin films show better properties as compared to SILAR method.

  2. Structural, optical and magnetic properties of pulsed laser deposited Co-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Karzazi, O., E-mail: ouiame_karzazi@hotmail.fr [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); LPS, Physics Department, Faculty of Sciences, BP 1796, Fes (Morocco); Sekhar, K.C. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); El Amiri, A. [LPTA, Université Hassan II-Casablanca, Faculté des Sciences, B.P. 5366, Maârif (Morocco); Hlil, E.K. [Institut Néel, CNRS, Université J. Fourier, BP 166, 38042 Grenoble (France); Conde, O. [Departamento de Física, Faculdade de Ciências, Universidade de Lisboa and CeFEMA, Campo Grande, 1749-016 Lisboa (Portugal); Levichev, S. [Research Institute for Chemistry, Nizhni Novgorod State University, 603950 Nizhni Novgorod (Russian Federation); Agostinho Moreira, J. [IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007, Porto (Portugal); Chahboun, A. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); FST Tanger, Physics Department, BP 416, Tangier (Morocco); Almeida, A. [IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007, Porto (Portugal); Gomes, M.J.M. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2015-12-01

    Zn{sub 1−x}Co{sub x}O films with different Co concentrations (with x=0.00, 0.10, 0.15, and 0.30) were grown by pulsed laser deposition (PLD) technique. The structural and optical properties of the films were investigated by grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy and photoluminescence (PL). The magnetic properties were measured by conventional magnetometry using a SQUID and simulated by ab-initio calculations using Korring–Khon–Rostoker (KKR) method combined with coherent potential approximation (CPA). The effect of Co-doping on the GIXRD and Raman peaks positions, shape and intensity is discussed. PL studies demonstrate that Co-doping induces a decrease of the bandgap energy and quenching of the UV emission. They also suggest the presence of Zn interstitials when x≥0.15. The 10% Co-doped ZnO film shows ferromagnetism at 390 K with a spontaneous magnetic moment ≈4×10{sup −5} emu and coercive field ≈0.17 kOe. The origin of ferromagnetism is explained based on the calculations using KKR method. - Highlights: • Zn{sub 1−x}Co{sub x}O films (x=0.00, 0.10, 0.15, and 0.30) were grown by (PLD) technique. • Zn{sub 0.9}Co{sub 0.1}O film shows ferromagnetism above room temperature. • The origin of ferromagnetism behavior is attributed to the p-d hybridization. • Co-doping induces a decrease of the bandgap energy of the films.

  3. Characterization and Wettability of ZnO Film Prepared by Chemical Etching Method

    Institute of Scientific and Technical Information of China (English)

    GUO Hua-xi; JIA Hui-ying; ZENG Jian-bo; CONG Qian; REN Lu-quan

    2013-01-01

    ZnO thin films were prepared by a chemical etching method and their wettability was investigated.The structure and surface composition structure were characterized by means of scanning electron microscopy,X-ray photoelectronic spectrometry(XPS),X-ray diffraction(XRD) and Raman spectrometry.These analyses reveal that the etched films were large-scale micro-nanohierarchical structures composed of a Zn core and a ZnO coating.Superhydrophobic surfaces with water contact angles of over 150° were obtained by n-octadecanethiol(ODT) modification.The XPS and Raman results indicate that ODT molecules were bound to the ZnO surface with the S head group by forming Zn—S bond.

  4. Photopatternable nano-composite (SU-8/ZnO) thin films for piezo-electric applications

    Science.gov (United States)

    Kandpal, Manoj; Sharan, Chandrashekhar; Poddar, Pankaj; Prashanthi, K.; Apte, Prakash R.; Ramgopal Rao, V.

    2012-09-01

    Photo-curable nanocomposite material was formulated by embedding ZnO nanoparticles into a SU-8 matrix and studied for its piezoelectric properties for low cost fabrication of self-powered nanodevices. The piezoelectric coefficient of ZnO nanoparticles was observed to be ranging between 15 and 23 pm/V, which is the highest reported. These experimental studies support the recent theoretical predictions where the piezoelectric coefficients in ZnO nanoparticles were found to be higher compared to the thin films because of the surface relaxation induced volume reductions in the nanometer scale. The photo-curable property of these polymer composite films is exploited to demonstrate fabrication of a micro-cantilever test structure.

  5. Colour electroluminescence with end light-emitting from ZnO nanowire/polymer film

    Energy Technology Data Exchange (ETDEWEB)

    He Ying; Wang Junan [Institute of Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Zhang Wenfei; Chen Xiaoban; Huang Zonghao; Gu Qiuwen [Department of Polymer Materials, School of Materials Science and Engineering, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China)], E-mail: yinghe@staff.shu.edu.cn

    2009-03-01

    The ZnO nanowires with polymer film were self-assembly grown on n-type (111) plane of the silicon substrate using polymer assisted complexing soft-template process through a simple polymer complexation and low-temperature oxidizing-sintering, which have smooth top and fine hexagonal columnar structure with average length of about 6 {mu}m and the diameter of about 40 nm. These columnar structured ZnO nanowires had strong near-band ultraviolet emission at {approx}383 nm and blue electrically driven emission at {approx} 400 nm with a relatively low turn-on voltage, as well as a typical diode characteristic property at room temperature. In particular, these structures, being of high aspect ratio and small tip radius of curvature, may possess a good amplified stimulated emission and lasing property. These results suggested a potential application of ZnO nanowire/polymer film as electroluminescence flat panel displays or illuminations in the future.

  6. Template-controlled piezoactivity of ZnO thin films grown via a bioinspired approach

    Science.gov (United States)

    Blumenstein, Nina J; Streb, Fabian; Walheim, Stefan; Schimmel, Thomas; Bill, Joachim

    2017-01-01

    Biomaterials are used as model systems for the deposition of functional inorganic materials under mild reaction conditions where organic templates direct the deposition process. In this study, this principle was adapted for the formation of piezoelectric ZnO thin films. The influence of two different organic templates (namely, a carboxylate-terminated self-assembled monolayer and a sulfonate-terminated polyelectrolyte multilayer) on the deposition and therefore on the piezoelectric performance was investigated. While the low negative charge of the COOH-SAM is not able to support oriented attachment of the particles, the strongly negatively charged sulfonated polyelectrolyte leads to texturing of the ZnO film. This texture enables a piezoelectric performance of the material which was measured by piezoresponse force microscopy. This study shows that it is possible to tune the piezoelectric properties of ZnO by applying templates with different functionalities. PMID:28243568

  7. Evolution of Surface Morphology and Chemistry in ZnO Thin Films and Steel Surfaces studied by Synchrotron X-ray Spectroscopy and Imaging

    Science.gov (United States)

    Jiang, Hua

    films after treatment, with platelet-shaped structures that are 100-200 nm wide by 1mum long. In addition, Zn heterogeneity, anisotropic structure and disordering were also observed in the aged Al-doped ZnO thin films using synchrotron x-ray characterization. X-ray diffraction and absorption spectroscopy indicate the formation of a zinc hydroxide in Al-doped films due to environmental aging. Utilizing advanced characterization methods, our studies provide information with unprecedented level of details and reveal the chemical and morphologically heterogeneous nature of degradation in ZnO films. Anti-corrosion coating is widely used on industrial steel products. While the effect of these coatings is proven to be positive, fundamental studies on the chemical evolution of the protected metal is lacking. Here, we conducted in situ x-ray spectroscopic experiment to observe the process of steel corrosion with and without the protective coating. X-ray fluorescence mapping was conducted to observe surface morphology and elemental distribution during redox process. X-ray absorption near-edge structure spectroscopy was performed to determine the oxidation states and chemical information of Fe. Steel without coating was corroded rapidly and homogeneously, within 1 hour. Steel with anti-corrosion Zr-based (Henkel Corporation) coating showed good resistivity to corrosive environment (5wt% NaCl solution). Only very slight local oxidation was observed after approximately 10 hours of treatment. Our study laid foundation for possibility to conduct in situ research on numerous materials under various environments.

  8. Vertically aligned ZnO nanorod grown by hydrothermal based chemical method on glass substrate

    Science.gov (United States)

    Srivastava, R.; Majumdar, S.; Bhunia, S.

    2012-06-01

    A low-temperature and effective precursor-based method has been demonstrated to synthesize nanostructured ZnO. It is found that the morphology of ZnO precursors has a strong dependence on the reaction conditions that include the molar ratio of reagents, solvent, and reaction temperature. In this work, ZnO nanostructures were synthesized via hydrothermal based chemical method. Zinc acetate dehydrate [Zn(Ac)2 2H2O] and 1-propanol(C3H8O) were adopted for a seed layer growth on glass substrate via spin coating technique. Zinc nitrate hexahydrate [Zn(NO3)2 6H2O], hexamethylenetetramine(C6H12N4) and diethylamine(C4H11N) were adopted as synthesis precursors. The ZnO nanostructures obtained were characterized by scanning electronic microscopy (SEM) and the PL method. The SEM image of the sample showed that the thin film of ZnO on glass substrate has, predominantly, a nanometric rod-like morphology with hexagonal wurtzite structure.

  9. Preparation and optical characteristics of ZnO films by chelating sol-gel method

    Institute of Scientific and Technical Information of China (English)

    YANG Lirong; JIN Zhengguo; BU Shaojing; SUN Yingchun; CHENG Zhijie

    2004-01-01

    The effect of different annealing temperatures on the structure, morphology, and optical properties of ZnO thin films prepared by the chelating sol-gel method was investigated. Zinc-oxide thin films were coated on quartz glass substrates by dip coating. Zinc nitrate, absolute ethanol, and citric acid were used as precursor, solvent, and chelating agent, respectively. The results show that ZnO films derived from zinc-citrate have lower crystallization temperature (below 400°C),and that the crystal structure is wurtzite. The films, treated over 500°C, consist of nano-particles and show to be porous at 600°C. The particle size of the film increases with the increase of the annealing temperature. The largest particle size is 60 nm at 600°C. The optical transmittances related to the annealing temperatures become 90% higher in the visible range. The film shows a starting absorption at 380 nm, and the optical band-gap of the thin film (fired at 500°C) is 3.25 eV and close to the intrinsic band-gap of ZnO (3.2 eV).

  10. Effects of high magnetic field assisted annealing on structure and optical, electric properties of electrodeposited ZnO films

    Science.gov (United States)

    Gao, Yang; Li, Guojian; Wu, Chun; Sui, Xudong; Du, Jiaojiao; Wang, Qiang

    2017-01-01

    Electrodeposited ZnO films have been annealed at 300 °C for 2 h under 12 T high magnetic field (HMF) with the directions of parallel and perpendicular to the films, respectively. The structural, optical and electric properties were characterized by scanning electron microscopy, X-ray diffraction, photoluminescence (PL) spectra, X-ray photoemission spectroscopy (XPS) and Seebeck coefficient/electrical resistance measuring system. The results show that HMF has a significant effect on the growth of ZnO films along c-axis and leads to hexagonal platelets of ZnO growing parallel to the direction of HMF. Furthermore, the hexagonal platelets become bulky platelets with an obvious trendy rotating their c-axis parallel to the substrate. The PL spectra of all the films exhibits the UV and blue emission, moreover, the blue emission plays the main role. The resistivity of ZnO films increases with the increase of measure temperature, which shows a typical degenerate semiconductor characteristic. HMF reduces significantly the intensity of whole emission peaks and the resistivity of ZnO films. These may be attribute to the significant changes of the structure and morphology of ZnO films, leading to various amounts of the defects in the ZnO crystal.

  11. Characterization of CBD grown ZnO films with high c-axis orientation

    Energy Technology Data Exchange (ETDEWEB)

    Kahraman, S., E-mail: suleymanmku@gmail.com [Physics Department, Mustafa Kemal University, 31034 Hatay (Turkey); Bayansal, F.; Cetinkara, H.A.; Cakmak, H.M.; Gueder, H.S. [Physics Department, Mustafa Kemal University, 31034 Hatay (Turkey)

    2012-06-15

    Highly c-axis oriented ZnO films were deposited on seeded glass substrates. Successive ionic layer adsorption and reaction (SILAR) method and chemical bath deposition (CBD) method were used to obtain seed layers and ZnO films. To see the effects of seed layer and deposition time, structural (e.g. grain size, microstrain and dislocation density), morphological, and electrical (e.g. resistivity, activation energy) properties of the films were investigated by scanning electron microscopy, X-ray diffraction, and four point probe method. From the SEM images, resultant structures were found as well defined nanorods nearly perpendicular to the substrate surfaces and densely cover the substrates. The XRD patterns showed that ZnO films have hexagonal wurtzite structure with a preferred c-axis orientation along (002) plane. C-axis orientation was also supported by texture coefficient calculations. The lattice parameters of the structures were determined as a = 3.2268 A, b = 5.2745 A, {alpha} = {beta} = 90 Degree-Sign and {gamma} = 120 Degree-Sign . From the XRD patterns, it was revealed that, microstrain and dislocation density values of the structures decreased whereas grain size increased. This was attributed to enhancement occurred in lattice structure of the ZnO films. Activation energy values of the films were found in between 0.12 and 0.15 eV from the dark electrical resistivity-temperature characteristics in a temperature range of 300-500 K. - Highlights: Black-Right-Pointing-Pointer Hexagonal wurtzite structured ZnO nanorods (preferred orientation along (002) plane). Black-Right-Pointing-Pointer Electrical activation energies were calculated in between 0.12 and 0.15 eV. Black-Right-Pointing-Pointer Microstrain and dislocation density decreased with increasing deposition time. Black-Right-Pointing-Pointer Increasing deposition time was resulted in an increase in preferred orientation.

  12. Modification of ZnO Thin Films by Ni, Cu, and Cd Doping*1

    Science.gov (United States)

    Jiménez-González, A. E.

    1997-02-01

    With the propose of investigating the effect of transition elements in ZnO thin films prepared by the Successive Ion Layer Adsorption and Reaction (SILAR) technique, the deposition solutions were chemically impurified with Ni, Cu, and Cd, as elements of the Ib, IIb, and VIIIa groups. X-ray fluorescence (XRF) analyses confirm that the impurification with Ni and Cu in fact took place but the impurification with Cd did not, while the XRD analyses show that foras preparedand Ni-impurified annealed films, the crystallites are almost oriented along thecaxis. The electrical properties of the ZnO films were also modified with the impurification. After annealing in air (450°C) the dark conductivity of the films was increased in the case of Ni and Cd impurification up to 1.80×10-3and 1.86×10-2[Ω cm]-1, respectively, but it decreased drastically in the case of Cu to 5.51×10-7[Ω cm]-1, as referred to the dark conductivity (1.86×10-4[Ω cm]-1) of the pure ZnO sample. The measured activation energy for the electrical conductivity of the modified ZnO thin films is 55 meV for the Ni modification, indicating the existence of donor levels. On the other hand, the Cu modification increases the activation energy up to 132 meV, which is higher than the activation energy for pure ZnO thin films (98 meV).

  13. Photocatalytic activity of heterostructures based on ZnO and N-doped ZnO.

    Science.gov (United States)

    Qin, Hongchun; Li, Weiying; Xia, Yujing; He, Tao

    2011-08-01

    Different composite films prepared by coupling ZnO and nitrogen-doped ZnO (N-ZnO) were used to photodegrade humic acids (HA). The catalysts exhibit an activity in the order of glass/ZnO/N-ZnO > glass/N-ZnO >glass/ZnO > glass/N-ZnO/ZnO when light is irradiated from the film to glass substrate. However, glass/ZnO/N-ZnO exhibits a lower activity than glass/N-ZnO/ZnO when light is illuminated from glass to film. Moreover, glass/ZnO/N-ZnO shows a lower activity when light is irradiated from glass to film than that irradiated in the opposite direction. These results suggest that it is not always the case that the presence of a heterojunction at interface of two semiconductors can definitely result in improving the photoactivity of the heterostructure although it can suppress the recombination of photogenerated charge carriers. They also indicate that photodegradation of HA is mainly via the oxidization by HO• (rather than directly by O(2)(-) and h(+)), which is produced mainly by the reactions with h(+). This implies the importance of fabrication a right heterojunction at the interface between the composite materials when they are used for photocatalysis. We envision that this work will help to develop new photocatalysts, as well as to understand better the photocatalytic mechanism.

  14. P-type ZnO films by phosphorus doping using plasma immersion ion-implantation technique

    Science.gov (United States)

    Nagar, S.; Chakrabarti, S.

    2013-03-01

    ZnO has been a subject of intense research in the optoelectronics community owing to its wide bandgap (3.3eV) and large exciton binding energy (60meV). However, difficulty in doping it p-type posts a hindrance in fabricating ZnO-based devices. In order to make p-type ZnO films, phosphorus implantation, using plasma immersion ion-implantation technique (2kV, 900W, 10μs pulse width) for 30 seconds, was performed on ZnO thin film deposited by RF Magnetron Sputtering (Sample A). The implanted samples were subsequently rapid thermal annealed at 700°C and 1000°C (Samples B and C) in oxygen environment for 30 seconds. Low temperature (8K) photoluminescence spectra reveal dominant donor-bound exciton (D°X) peak at 3.36eV for samples A and B. However, for Sample B the peaks around 3.31eV and 3.22eV corresponding to the free electron-acceptor (FA) and donor to acceptor pair peaks (DAP) are also observed. A dominant peak around 3.35eV, corresponding to acceptor bound exciton (A°X) peak, is detected for Sample C along with the presence of FA and DAP peaks around 3.31eV and 3.22eV. Moreover, the deep level peak around 2.5eV is higher for Sample B which may be due to implantation and acceptor related defects. However, for Sample C, the deep level peaks are very weak compared to the near band edge peaks confirming that these peaks are mainly due to intrinsic defects and not related to acceptors. These results clearly show us a promising way to achieve p-type ZnO films using phosphorus doping.

  15. ZnO nanoparticle-containing emulsions for transparent, hydrophobic UV-absorbent films.

    Science.gov (United States)

    Tigges, Britta; Möller, Martin; Weichold, Oliver

    2010-05-01

    A simple method for the preparation of thin, zinc oxide nanoparticle-containing films showing high UV absorption, high transmittance in the visible range (>88%), and water repellence with contact angles of 120 degrees is presented. The films are coated from an emulsion containing the hydrophobic polymer and the nanoparticles. This emulsion was prepared by mixing commercial o/w emulsions used for hydrophobic coatings on textiles with ZnO nanoparticle-containing o/w emulsions. The latter were designed so that the mixed coating formulation could be prepared without breaking. Preparation and properties of the o/w emulsions as well as the final films are elaborated. The performance of hydrophobic and hydrophilic ZnO nanoparticles during preparation and in the final film is evaluated.

  16. Effect of annealing treatment on optical and electrical properties of ZnO films

    Institute of Scientific and Technical Information of China (English)

    WANG Wan-lu; LIAO Ke-jun; LI Li; WU Zhi-hua; WANG Yong-tian; ZHANG Jin

    2005-01-01

    The ZnO-Al films were prepared by R. F. magnetron sputtering system using a Zn-Al target (with purity of 99.99%). The obtained films were characterized by X-ray diffraction, SEM and optical and electrical measurements. The experimental results show that the properties of ZnO films can be further improved by annealing treatment. The crystallinity of ZnO films becomes better, and the optical gap energy is decreased, but thermoelectric power is enhanced after heat treatment. The optical gap energy decreases from 3.75 eV to 3.68 eV when the annealing temperature increases from 25 ℃ to 400 ℃. This can be ascribed to the decrease of carrier concentration, resulting in Burstein shift.

  17. PEDOT:PSS Schottky contacts on annealed ZnO films

    Institute of Scientific and Technical Information of China (English)

    Zhu Ya-Bin; Hu Wei; Na Jie; He Fan; Zhou Yue-Liang; Chen Cong

    2011-01-01

    Polycrystalline ZnO and ITO films on Si02 substrates are prepared by radio frequency (RF)reactive magnetron sputtering. Schottky contacts are fabricated on ZnO films by spin coating with a high conducting polymer, poly(3,4-ethylenedioxythiophene):poly (styrenesulfonate)(PEDOT:PSS)as the metal electrodes. The current-voltage measurements for samples on unannealed ZnO films exhibit rectifying behaviours with a barrier height of 0.72 eV(n=1.93).The current for the sample is improved by two orders of magnitude at I V after annealing ZnO film at 850℃, whose barrier height is 0.75 eV with an ideality factor of 1.12. X-ray diffraction, atomic force microscopy and scanning electron microscopy are used to study the properties of the PEDOT:PSS/ZnO/ITO/SiO2. The results are useful for applications such as metal-semiconductor field-effect transistors and UV photodetectors.

  18. Studies on nonvolatile resistance memory switching in ZnO thin films

    Indian Academy of Sciences (India)

    L M Kukreja; A K Das; P Misra

    2009-06-01

    Six decades of research on ZnO has recently sprouted a new branch in the domain of resistive random access memories. Highly resistive and c-axis oriented ZnO thin films were grown by us using d.c. discharge assisted pulsed laser deposition on Pt/Ti/SiO2/Si substrates at room temperature. The resistive switching characteristics of these films were studied in the top-bottom configuration using current–voltage measurements at room temperature. Reliable and repeated switching of the resistance of ZnO thin films was obtained between two well defined states of high and low resistance with a narrow dispersion and small switching voltages. Resistance ratios of the high resistance state to low resistance state were found to be in the range of 2–5 orders of magnitude up to 20 test cycles. The conduction mechanism was found to be dominated by the Ohmic behaviour in low resistance states, while Poole–Frenkel emission was found to dominate in high resistance state. The achieved characteristics of the resistive switching in ZnO thin films seem to be promising for nonvolatile memory applications.

  19. Growth and optical characteristics of high-quality ZnO thin films on graphene layers

    Directory of Open Access Journals (Sweden)

    Suk In Park

    2015-01-01

    Full Text Available We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm2 at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.

  20. On the environmental stability of ZnO thin films by spatial atomic layer deposition

    NARCIS (Netherlands)

    Illiberi, A.; Scherpenborg, R.; Theelen, M.; Poodt, P.; Roozeboom, F.

    2013-01-01

    Undoped and indium-doped ZnO films have been deposited by atmospheric spatial atomic-layer-deposition (spatial-ALD). The stability of their electrical, optical, and structural properties has been investigated by a damp-heat test in an environment with 85% relative humidity at 85 °C. The resistivity

  1. Microstructural and Mechanical Studies of PVA Doped with ZnO and WO3 Composites Films

    Directory of Open Access Journals (Sweden)

    N. B. Rithin Kumar

    2014-01-01

    Full Text Available Polymer composites of ZnO and WO3 nanoparticles doped polyvinyl alcohol (PVA matrix have been prepared using solvent casting method. The microstructural properties of prepared films were studied using FTIR, XRD, SEM, and EDAX techniques. In the doped PVA, many irregular shifts in the FTIR spectra have been observed and these shifts in bands can be understood on the basis of intra/intermolecular hydrogen bonding with the adjacent OH group of PVA. The chemical composition, phase homogeneity, and morphology of the polymer composites of the polymer film were studied using EDAX and SEM. These data indicate that the distribution of nanosized ZnO and WO3 dopants is uniform and confirm the presence of ZnO and WO3 in the film. The crystal structure and crystallinity of polymer composites were studied by XRD. It was found that the change in structural repositioning and crystallinity of the composites takes place due to the interaction of dopants and also due to complex formation. The mechanical studies of doped polymer films were carried out using universal testing machine (UTM at room temperature, indicating that the addition of the ZnO and WO3 with weight percentage concentration equal to 14% increases the tensile strength and Young’s modulus.

  2. Deposition and characterization of ZnO films using microplasma at atmospheric pressure

    Energy Technology Data Exchange (ETDEWEB)

    Thejaswini, H.C.; Agasanapura, B.; Hopwood, J., E-mail: hopwood@ece.tufts.edu

    2016-03-31

    Zinc oxide (ZnO) films were deposited on room-temperature Si(100) by microwave-induced microplasma at one atmosphere. The precursor used in this work was zinc acetylacetonate hydrate (Zn(acac){sub 2}{sup .}xH{sub 2}O) sublimed at 54 °C into flowing helium. The deposition rate was estimated to be 400 nm/min. The films were visually transparent and FTIR spectroscopy confirms the presence of the Zn-O stretching vibration at 410 cm{sup −1}. Raman spectroscopy reveals that the films have the 437 cm{sup −1} Raman band typical of a wurtzite crystal structure. Cross sectional scanning electron microscopy shows columnar growth with individual column widths of approximately 0.5 μm. Scale-up using arrays of microplasmas is considered. - Highlights: • ZnO thin films were deposited on silicon and KBr at atmospheric pressure • Cold microplasma dissociates Zn(acac){sub 2} precursor and removes organics • The growth temperature does not exceed 23 °C • Deposition rates of 400 nm/min • ZnO composition is verified by FTIR and Raman spectroscopy.

  3. Photoelectrocatrocatalytic hydrolysis of starch by using sprayed ZnO thin films

    Science.gov (United States)

    Sapkal, R. T.; Shinde, S. S.; Rajpure, K. Y.; Bhosale, C. H.

    2013-05-01

    Thin films of zinc oxide have been deposited onto glass/FTO substrates at optimized 400 °C by using a chemical spray pyrolysis technique. Deposited films are character photocatalytic activity by using XRD, an SEM, a UV-vis spectrophotometer, and a PEC single-cell reactor. Films are polycrystalline and have a hexagonal (wurtzite) crystal structure with c-axis (002) orientation growth perpendicular to the substrate surface. The observed direct band gap is about 3.22 eV for typical films prepared at 400 °C. The photocatalytic activity of starch with a ZnO photocatalyst has been studied by using a novel photoelectrocatalytic process.

  4. Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

    Science.gov (United States)

    Oh, Byeong-Yun; Han, Jin-Woo; Seo, Dae-Shik; Kim, Kwang-Young; Baek, Seong-Ho; Jang, Hwan Soo; Kim, Jae Hyun

    2012-07-01

    We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3 film content, a ZnO:Al film with low electrical resistivity (9.84 x 10(-4) Omega cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2 V(-1) s(-1), 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 m7Omega(-1). These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation.

  5. Growth of crystalline ZnO films on the nitridated (0001) sapphire surface

    Energy Technology Data Exchange (ETDEWEB)

    Butashin, A. V.; Kanevsky, V. M.; Muslimov, A. E., E-mail: amuslimov@mail.ru; Prosekov, P. A.; Kondratev, O. A.; Blagov, A. E.; Vasil’ev, A. L.; Rakova, E. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Babaev, V. A.; Ismailov, A. M. [Dagestan State University (Russian Federation); Vovk, E. A.; Nizhankovsky, S. V. [National Academy of Sciences of Ukraine, Institute for Single Crystals (Ukraine)

    2015-07-15

    The surface morphology and structure of (0001) sapphire substrates subjected to thermochemical nitridation in a mixture of N{sub 2}, CO, and H{sub 2} gases are investigated by electron and probe microscopy and X-ray and electron diffraction. It is shown that an aluminum nitride layer is formed on the substrate surface and heteroepitaxial ZnO films deposited onto such substrates by magnetron sputtering have a higher quality when compared with films grown on sapphire.

  6. Study of deposition parameters for the fabrication of ZnO thin films using femtosecond laser

    Science.gov (United States)

    Hashmi, Jaweria Zartaj; Siraj, Khurram; Latif, Anwar; Murray, Mathew; Jose, Gin

    2016-08-01

    Femtosecond (fs) pulsed laser deposition (fs-PLD) of ZnO thin film on borosilicate glass substrates is reported in this work. The effect of important fs-PLD parameters such as target-substrate distance, laser pulse energy and substrate temperature on structure, morphology, optical transparency and luminescence of as-deposited films is discussed. XRD analysis reveals that all the films grown using the laser energy range 120-230 μJ are polycrystalline when they are deposited at room temperature in a ~10-5 Torr vacuum. Introducing 0.7 mTorr oxygen pressure, the films show preferred c-axis growth and transform into a single-crystal-like film when the substrate temperature is increased to 100 °C. The scanning electron micrographs show the presence of small nano-size grains at 25 °C, which grow in size to the regular hexagonal shape particles at 100 °C. Optical transmission of the ZnO film is found to increase with an increase in crystal quality. Maximum transmittance of 95 % in the wavelength range 400-1400 nm is achieved for films deposited at 100 °C employing a laser pulse energy of 180 μJ. The luminescence spectra show a strong UV emission band peaked at 377 nm close to the ZnO band gap. The shallow donor defects increase at higher pulse energies and higher substrate temperatures, which give rise to violet-blue luminescence. The results indicate that nano-crystalline ZnO thin films with high crystalline quality and optical transparency can be fabricated by using pulses from fs lasers.

  7. Al doped ZnO thin films - microstructure, physical and sensor properties

    Science.gov (United States)

    Starbov, N.; Balabanov, S.; Bineva, I.; Rachkova, A.; Krumov, E.; Starbova, K.

    2012-12-01

    Thin ZnO films doped with Al are deposited by spray pyrolysis onto glass substrates using starting solution of Zn-acetate + n.AlCl (where 0.1 detection of noxious gases is checked via resistivity measurements under saturated vapours of ethanol, acetone, ammonia, dimethylamine and formalin at room temperature. Finally the results obtained are discussed concerning the application of the ZnO:Al films studied in the field of sensor technique.

  8. Temperature Dependent Thermal Conductivity and Elastic Properties of a-InGaZnO4 and a-In2Ga2ZnO7 Thin Films

    Science.gov (United States)

    Thompson, W. D.; White, B. E.

    2016-10-01

    Amorphous In-Ga-Zn-O is an important oxide semiconductor in advanced display technologies. Despite its importance, little has been reported on the thermal and elastic properties of this material. Here, the temperature dependence of the thermal conductivity, shear modulus, and internal friction of a-InGaZnO4 and a-In2Ga2ZnO7 films are presented. The thermal conductivity of a-In2Ga2ZnO7, measured from 100 K to room temperature, was found to be larger than that of a-InGaZnO4 over the entire temperature range. At room temperature the thermal conductivities were 1.9 W/m K and 1.4 W/m K for the a-In2Ga2ZnO7 and a-InGaZnO4 films, respectively. The shear modulus and internal friction of these films were measured in the temperature range of 340 mK to 65 K. At 4.2 K the shear modulus of the a-InGaZnO4 and a-In2 Ga2ZnO7 films was 44 GPa and 42 GPa, respectively. The internal friction of thin films at each composition exhibited a temperature dependence and magnitude that is in agreement with that observed in all amorphous solids. As the self-heating effect is of concern in the development of amorphous In-Ga-Zn-O based thin film transistors on low thermal conductivity substrates, a thermal model of such a device utilizing a-In2Ga2ZnO7 or a-InGaZnO4 as the active layer was explored. It was found that the temperature increase of the thin film transistor channel is essentially independent of the thermal conductivity of the active layer.

  9. A comparison of ZnO films deposited on indium tin oxide and soda lime glass under identical conditions

    Energy Technology Data Exchange (ETDEWEB)

    Deka, Angshuman; Nanda, Karuna Kar [Materials Research Centre, Indian Institute of Science, Bangalore - 560012 (India)

    2013-06-15

    ZnO films have been grown via a vapour phase transport (VPT) on soda lime glass (SLG) and indium-tin oxide (ITO) coated glass. ZnO film on ITO had traces of Zn and C which gives them a dark appearance while that appears yellowish-white on SLG. X-ray photoelectron spectroscopy studies confirm the traces of C in the form of C-O. The photoluminescence studies reveal a prominent green luminescence band for ZnO film on ITO.

  10. Ferromagnetic behaviour of Fe-doped ZnO nanograined films

    Directory of Open Access Journals (Sweden)

    Boris B. Straumal

    2013-06-01

    Full Text Available The influence of the grain boundary (GB specific area sGB on the appearance of ferromagnetism in Fe-doped ZnO has been analysed. A review of numerous research contributions from the literature on the origin of the ferromagnetic behaviour of Fe-doped ZnO is given. An empirical correlation has been found that the value of the specific grain boundary area sGB is the main factor controlling such behaviour. The Fe-doped ZnO becomes ferromagnetic only if it contains enough GBs, i.e., if sGB is higher than a certain threshold value sth = 5 × 104 m2/m3. It corresponds to the effective grain size of about 40 μm assuming a full, dense material and equiaxial grains. Magnetic properties of ZnO dense nanograined thin films doped with iron (0 to 40 atom % have been investigated. The films were deposited by using the wet chemistry “liquid ceramics” method. The samples demonstrate ferromagnetic behaviour with Js up to 0.10 emu/g (0.025 μB/f.u.ZnO and coercivity Hc ≈ 0.03 T. Saturation magnetisation depends nonmonotonically on the Fe concentration. The dependence on Fe content can be explained by the changes in the structure and contiguity of a ferromagnetic “grain boundary foam” responsible for the magnetic properties of pure and doped ZnO.

  11. Ferromagnetic behaviour of Fe-doped ZnO nanograined films.

    Science.gov (United States)

    Straumal, Boris B; Protasova, Svetlana G; Mazilkin, Andrei A; Tietze, Thomas; Goering, Eberhard; Schütz, Gisela; Straumal, Petr B; Baretzky, Brigitte

    2013-01-01

    The influence of the grain boundary (GB) specific area s GB on the appearance of ferromagnetism in Fe-doped ZnO has been analysed. A review of numerous research contributions from the literature on the origin of the ferromagnetic behaviour of Fe-doped ZnO is given. An empirical correlation has been found that the value of the specific grain boundary area s GB is the main factor controlling such behaviour. The Fe-doped ZnO becomes ferromagnetic only if it contains enough GBs, i.e., if s GB is higher than a certain threshold value s th = 5 × 10(4) m(2)/m(3). It corresponds to the effective grain size of about 40 μm assuming a full, dense material and equiaxial grains. Magnetic properties of ZnO dense nanograined thin films doped with iron (0 to 40 atom %) have been investigated. The films were deposited by using the wet chemistry "liquid ceramics" method. The samples demonstrate ferromagnetic behaviour with J s up to 0.10 emu/g (0.025 μB/f.u.ZnO) and coercivity H c ≈ 0.03 T. Saturation magnetisation depends nonmonotonically on the Fe concentration. The dependence on Fe content can be explained by the changes in the structure and contiguity of a ferromagnetic "grain boundary foam" responsible for the magnetic properties of pure and doped ZnO.

  12. ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSOR

    Directory of Open Access Journals (Sweden)

    Martin Mikulics

    2012-07-01

    Full Text Available Presented experiments utilize methanolic solution of zinc acetyl-acetonate as a precursor and sapphire (001 as a substrate for deposition of thin films of ZnO. The X-ray diffraction analysis revealed polycrystalline character of prepared films with preferential growth orientation along c-axis. The roughness of prepared films was assessed by AFM microscopy and represented by roughness root mean square (RMS value in range of 1.8 - 433 nm. The surface morphology was mapped by scanning electron microscopy showing periodical structure with several local defects. The optical transmittance spectrum of ZnO films was measured in wavelength range of 200-1000 nm. Prepared films are transparent in visible range with sharp ultra-violet cut-off at approximately 370 nm. Raman spectroscopy confirmed wurtzite structure and the presence of compressive stress within its structure as well as the occurrence of oxygen vacancies. The four-point Van der Pauw method was used to study the transport prosperities. The resistivity of presented ZnO films was found 8 × 10–2 Ω cm with carrier density of 1.3 × 1018 cm–3 and electron mobility of 40 cm2 V–1 s–1.

  13. Nanostructured Zn and ZnO nanowire thin films for mechanical and self-cleaning applications

    Science.gov (United States)

    Shaik, Ummar Pasha; Purkayastha, Debarun Dhar; Krishna, M. Ghanashyam; Madhurima, V.

    2015-03-01

    Nanostructured Zn metal films were deposited by thermal evaporation, on borosilicate glass, Quartz, sapphire, lanthanum aluminate and yttria stabilized zirconia substrates. The as-deposited films are nanocrystalline and show a morphology that consists of triangular nanosheets. The films are hydrophobic with contact angles between 102° and 120° with hardness and Young's modulus between 0.15-0.8 GPa and 18-300 GPa, respectively. Thermal annealing of the films at 500 °C results only in partial oxidation of Zn to ZnO, which indicates good oxidation resistance. Annealing also causes transformation of the Zn nanosheets into ZnO nanowires that are polycrystalline in nature. The ZnO nanowires are superhydrophobic with contact angles between 159° and 162°, contact angle hysteresis between 5° and 10° and exhibit a reversible superhydrophobic-hydrophilic transition under UV irradiation. The nanowires are much softer than the as-deposited Zn metal films, with hardness between 0.02 and 0.4 GPa and Young's modulus between 3 and 35 GPa. The current study thus demonstrates a simple process for fabrication of nanostructured Zn metal films followed by a one-step transformation to nanowires with properties that will be very attractive for mechanical and self-cleaning applications.

  14. Preparation of manganese-doped ZnO thin films and their characterization

    Indian Academy of Sciences (India)

    S Mondal; S R Bhattacharyya; P Mitra

    2013-04-01

    In this study, pure and manganese-doped zinc oxide (Mn:ZnO) thin films were deposited on quartz substrate following successive ion layer adsorption and reaction (SILAR) technique. The film growth rate was found to increase linearly with number of dipping cycle. Characterization techniques of XRD, SEM with EDX and UV–visible spectra measurement were done to investigate the effect of Mn doping on the structural and optical properties of Mn:ZnO thin films. Structural characterization by X-ray diffraction reveals that polycrystalline nature of the films increases with increasing manganese incorporation. Particle size evaluated using X-ray line broadening analysis shows decreasing trend with increasing manganese impurification. The average particle size for pure ZnO is 29.71nm and it reduces to 23.76nm for 5%Mn-doped ZnO. The strong preferred c-axis orientation is lost due to manganese (Mn) doping. The degree of polycrystallinity increases and the average microstrain in the films decreases with increasing Mn incorporation. Incorporation of Mn was confirmed from elemental analysis using EDX. As the Mn doping concentration increases the optical bandgap of the films decreases for the range of Mn doping reported here. The value of fundamental absorption edge is 3.22 eV for pure ZnO and it decreases to 3.06 eV for 5%Mn:ZnO.

  15. Synthesis and characterization of nanostructured undoped and Sn-doped ZnO thin films via sol–gel approach

    Energy Technology Data Exchange (ETDEWEB)

    Aydin, H., E-mail: cihataydin_26@hotmail.com [Department of Metallurgical and Materials Engineering, Engineering Faculty, Tunceli University, Tunceli 62000 (Turkey); El-Nasser, H.M. [Department of Physics, Al al-Bayt University, Mafraq (Jordan); Aydin, C. [Department of Metallurgy and Materials Engineering, Faculty of Technology, Firat University, Elazig 23119 (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Yakuphanoglu, F. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Department of Physics, Faculty of Science, Firat University, Elazig 23119 (Turkey); Nanoscience and Nanotechnology Laboratory, Firat University, Elazig 23119 (Turkey)

    2015-09-30

    Graphical abstract: - Highlights: • Sn-doped ZnO films were prepared via facile sol–gel spin coating method. • The grain size of the films changes from 39.23 to 71.84 nm with Sn doping. • The refractive index dispersion of the films obeys the single oscillator model. - Abstract: Thin films of Sn-doped ZnO were prepared via facile sol–gel spin coating method. The structural and optical properties of the films were investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and UV-VIS-NIR spectrophotometer. The X-ray results confirmed that all the ZnO thin films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation of (002) plane. The crystallite size and lattice parameter values of the films were obtained. Atomic force microscopy results indicate that the Sn-doped ZnO films have the nanostructure. The grain size values of the films were found to vary from 39.23 to 71.84 nm with Sn doping. The nanostructure of the Sn-doped ZnO films was also confirmed by scanning electron microcopy. The optical bandgaps of the films were calculated for the various Sn contents. The refractive index dispersion curves obey the single oscillator model. The optical constants and dispersion parameters of the ZnO films were changed with Sn doping. The obtained results suggest that the structural and optical properties of ZnO films can be controlled by Sn doping.

  16. Properties of ZnO thin films grown on Si substrates in vacuum and oxygen ambient by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Jie [State Key Laboratory for Materials Modification by Laser, Ion, Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116024 (China) and Department of Physics, Kunming University of Science and Technology, Kunming 650093 (China)]. E-mail: jiezhao_sub@163.com; Hu Lizhong [State Key Laboratory for Materials Modification by Laser, Ion, Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116024 (China); Liu Weifeng [State Key Laboratory for Materials Modification by Laser, Ion, Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116024 (China); Wang Zhaoyang [State Key Laboratory for Materials Modification by Laser, Ion, Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116024 (China)

    2007-05-15

    Epitaxial ZnO thin films have been synthesized directly on Si(1 1 1) substrates by pulsed laser deposition (PLD) in vacuum. The reflection high-energy electron diffraction (RHEED) indicates that streaky patterns can be clearly observed from the ZnO epilayers prepared at 600 and 650 deg. C, revealing a two-dimensional (2D) growth mode. While the ZnO thin film deposited in oxygen ambient shows ring RHEED pattern. There is a compressive in-plane stress existing in the ZnO epitaxial film, but a tensile one in the polycrystalline film. Compared with the ZnO epilayer, the ZnO polycrystalline film shows more intense ultraviolet emission (UVE) with a small full width at half maximum (FWHM) of 89 meV. It is suggested that the atomically flat epilayers may be powerfully used as transitive stratums to grow high-quality ZnO films suitable for the fabrication of optoelectronic devices.

  17. Effect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film.

    Science.gov (United States)

    Qin, Xuesi; Li, Guojian; Xiao, Lin; Chen, Guozhen; Wang, Kai; Wang, Qiang

    2016-12-01

    Nitrogen-doped zinc oxide (N: ZnO) films have been prepared by oxidizing reactive RF magnetron-sputtering zinc nitride (Zn-N) films. The effect of oxidation temperature and oxidation time on the growth, transmittance, and electrical properties of the film has been explored. The results show that both long oxidation time and high oxidation temperature can obtain the film with a good transmittance (over 80 % for visible and infrared light) and a high carrier concentration. The N: ZnO film exhibits a special growth model with the oxidation time and is first to form a N: ZnO particle on the surface, then to become a N: ZnO layer, and followed by the inside Zn-N segregating to the surface to oxidize N: ZnO. The surface particle oxidized more adequately than the inside. However, the X-ray photoemission spectroscopy results show that the lower N concentration results in the lower N substitution in the O lattice (No). This leads to the formation of n-type N: ZnO and the decrease of carrier concentration. Thus, this method can be used to tune the microstructure, optical transmittance, and electrical properties of the N: ZnO film.

  18. Improvement of Flame-made ZnO Nanoparticulate Thick Film Morphology for Ethanol Sensing

    Directory of Open Access Journals (Sweden)

    Sukon Phanichphant

    2007-05-01

    Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis using zinc naphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particles properties were analyzed by XRD, BET. The ZnO particle size and morphology was observed by SEM and HR-TEM revealing spheroidal, hexagonal, and rod-like morphologies. The crystallite sizes of ZnO spheroidal and hexagonal particles ranged from 10-20 nm. ZnO nanorods were ranged from 10-20 nm in width and 20-50 nm in length. Sensing films were produced by mixing the nanoparticles into an organic paste composed of terpineol and ethyl cellulose as a vehicle binder. The paste was doctor-bladed onto Al2O3 substrates interdigitated with Au electrodes. The morphology of the sensing films was analyzed by optical microscopy and SEM analysis. Cracking of the sensing films during annealing process was improved by varying the heating conditions. The gas sensing of ethanol (25-250 ppm was studied at 400 °C in dry air containing SiC as the fluidized particles. The oxidation of ethanol on the surface of the semiconductor was confirmed by mass spectroscopy (MS. The effect of micro-cracks was quantitatively accounted for as a provider of extra exposed edges. The sensitivity decreased notably with increasing crack of sensing films. It can be observed that crack widths were reduced with decreasing heating rates. Crack-free of thick (5 μm ZnO films evidently showed higher sensor signal and faster response times (within seconds than cracked sensor. The sensor signal increased and the response time decreased with increasing ethanol concentration.

  19. Achieving highly-enhanced UV photoluminescence and its origin in ZnO nanocrystalline films

    Science.gov (United States)

    Thapa, Dinesh; Huso, Jesse; Morrison, John L.; Corolewski, Caleb D.; McCluskey, Matthew D.; Bergman, Leah

    2016-08-01

    ZnO is an efficient luminescent material in the UV-range ∼3.4 eV with a wide range of applications in optical technologies. Sputtering is a cost-effective and relatively straightforward growth technique for ZnO films; however, most as-grown films are observed to contain intrinsic defects which can significantly diminish the desirable UV-emission. In this research the defect dynamics and optical properties of ZnO sputtered films were studied via post-growth annealing in Ar or O2 ambient, with X-ray diffraction (XRD), imaging, transmission and Urbach analysis, Raman scattering, and photoluminescence (PL). The imaging, XRD, Raman and Urbach analyses indicate significant improvement in crystal morphology and band-edge characteristics upon annealing, which is nearly independent of the annealing environment. The native defects specific to the as-grown films, which were analyzed via PL, are assigned to Zni related centers that luminesce at 2.8 eV. Their presence is attributed to the nature of the sputtering growth technique, which supports Zn-rich growth conditions. After annealing, in either environment the 2.8 eV center diminished accompanied by morphology improvement, and the desirable UV-PL significantly increased. The O2 ambient was found to introduce nominal Oi centers while the Ar ambient was found to be the ideal environment for the enhancement of the UV-light emission: an enhancement of ∼40 times was achieved. The increase in the UV-PL is attributed to the reduction of Zni-related defects, the presence of which in ZnO provides a competing route to the UV emission. Also, the effect of the annealing was to decrease the compressive stress in the films. Finally, the dominant UV-PL at the cold temperature regime is attributed to luminescent centers not associated with the usual excitons of ZnO, but rather to structural defects.

  20. Preparation of Cauliflower-like ZnO Films by Chemical Bath Deposition:Photovoltaic Performance and Equivalent Circuit of Dye-sensitized Solar Cells

    Institute of Scientific and Technical Information of China (English)

    Yuqiao Wang; Xia Cui; Yuan Zhang; Xiaorui Gao; Yueming Sun

    2013-01-01

    The uniform cauliflower-like ZnO films were deposited on the conducting substrate by a chemical bath deposition in urea/water solution.The film structure and morphology were characterized by X-ray diffraction,thermogravimetric differential thermal analysis,energy dispersive spectroscopy,selected area electron diffraction,field emission scanning electron microscopy and high resolution transmission electron microscopy.The average diameter of ZnO nanoparticles and the petal thickness were 25 nm and 8 μm,respectively.Dyesensitized solar cells based on the cauliflower-like ZnO film electrode showed the short-circuit current density of 6.08 mA/cm2,the open-circuit photovoltage of 0.66 V,the fill factor of 0.55 and the overall conversion efficiency of 2.18%.The equivalent circuit of cells based on the ZnO film electrodes was measured by the electrochemical impedance spectroscopy.Furthermore,the analysis of equivalent circuit provided the relationship between the cell performance and the interfacial resistance,such as the shunt resistance and the series resistance.

  1. Growth of Ag thin films on ZnO(0 0 0 -1) investigated by AES and STM

    Energy Technology Data Exchange (ETDEWEB)

    Duriau, E. [Interuniversity Microelectronic Center (IMEC), SPDT-MCA, Kapeldreef 75, B-3001 Leuven (Belgium); Agouram, S. [Dpto. Fisica Aplicada y Electromagnetismo c/Dr. Moliner no. 50, 46100 Burjassot, Valencia (Spain); Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Morhain, C. [Centre de Recherche sur l' HeteroEpitaxie et ses Applications (CRHEA), CNRS, Rue Bernard Gregory, F-06560 Valbonne Sophia-Antipolis (France); Seldrum, T. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Sporken, R. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Dumont, J. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium)]. E-mail: jacques.dumont@fundp.ac.be

    2006-11-15

    The growth of Ag films on ZnO(0 0 0 -1) has been investigated by Auger electron spectroscopy (AES) and scanning tunneling microscopy (STM). A high density of islands is nucleated at the earliest stages of the growth. An upstepping mechanism causes these islands to coalesce while the uncovered fraction of the ZnO surface remains constant (30%)

  2. Spectroscopic ellipsometry, optical, structural and electrical investigation of sprayed pure and Sn-doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    Attaf N.

    2013-03-01

    Full Text Available In this work, we report the transparent pure and Sn-doped zinc oxide (ZnO. The films were deposited onto microscope glass substrate which was heated at 350±5C° by ultrasonic spray pyrolysis (U S P deposition technique. The concentrations of Sn were selected within the range of 0-3% by step of 0.5% and the time deposition is kept at 5 min. A (002-oriented wurtzite crystal structure was confirmed by X-rays patterns; and grain size varied within the range 7.37-14.84nm, and cristanillity is calculated goes from14.4 to 45.9%. Based on UV-VIS-IR analysis, the results revealed the high transparency of the sprayed films which exceeds 90%. The band gap energy was of 3.26-3.30 eV. The film thickness was estimated by spectroscopy ellipsometry and the found values were of 165-270nm. The refractive index is in the range of 2.75.The obtained electrical parameters were around 1018 cm−3, 3.6 cm2/Vs, 1.6Ω.cm; 5.8cm3/C. finally the Sn-doping has influenced the physical parameters of asground ZnO films

  3. Investigation of electrical and optical properties of MEH-PPV: ZnO nanocomposite films for OLED applications

    Science.gov (United States)

    Azhar, N. E. A.; Shafura, A. K.; Affendi, I. H. H.; Shariffudin, S. S.; Saurdi, I.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-07-01

    Recent investigations of the promising materials for optoelectronic have been demonstrated by introducing n-type inorganic material into conjugated polymer. The optical and electrical of nanocomposite films based on poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) and zinc oxide (ZnO) nanostructured of various deposition layers (1 to 3 layers) have been investigated. The MEH-PPV: ZnO nanocomposite films were deposited using spin-coating technique. The surface morphology nanocomposite films were characterized using field emission scanning electron microscope. From surface profiler measurement, we found that the thickness of nanocomposite films increased as deposition time increased. The optical properties were measured using photoluminescence spectroscope. The photoluminescence (PL) spectra showed that two deposition layers is the highest intensity at visible region (green emission) due to high energy transfer from particles to the polymer. The current density for two layers sample is due to aggregation of conjugated polymer chain hence form excited interchain exciton for optical excitation. This study will provide better performance and suitable for optoelectronic device especially OLEDs application.

  4. Tuning the photovoltage of dye-sensitized solar cells based on electrodeposited ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Oekermann, Torsten [Institute of Physical Chemistry and Electrochemistry, Leibniz Universitaet Hannover, Callinstrasse 3- 3A, 30167 Hannover (Germany); Peter, Laurence [Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Yoshida, Tsukasa [Graduate School of Engineering, Gifu University, Yanagido 1-1, Gifu 501-1193 (Japan)

    2007-07-01

    Nanoporous, fully crystalline ZnO films can be prepared by cathodic electrodeposition from aqueous solutions of Zn salts under the influence of structure-directing agents such as surfactants. Dye-sensitized solar cells (DSSC) based on such films have emerged as a possible alternative for nanocrystalline TiO2-based DSSC due to the very high porosity and good electron transport properties of the films. In this study, we have investigated the influence of the sensitizer dye molecules on the photovoltage of the ZnO-based DSSC. Impedance measurements show that the adsorbed dye molecules lead to a shift of the flatband potential of the ZnO. Electron pushing or withdrawing effects of the dye molecules and protonation or deprotonation of the ZnO surface are discussed as possible explanations. The shifts in the flatband potential partly explain the differences in the photovoltages caused by different dyes, however, differences in the electron injection efficiency and the blocking of electron back reaction by the dye molecules have to be taken into account, too, for a complete description.

  5. Controllable growth and characterization of highly aligned ZnO nanocolumnar thin films

    Science.gov (United States)

    Onuk, Zuhal; Rujisamphan, Nopporn; Murray, Roy; Bah, Mohamed; Tomakin, Murat; Shah, S. Ismat

    2017-02-01

    We investigated the effects of growth conditions during magnetron sputtering on the structural, morphological, and optical properties of nanostructured ZnO thin films. Undoped ZnO thin films are deposited onto p-type Si (100) and corning 7059 glass substrates by RF magnetron sputtering using a ZnO target in combination with various Ar-O2 sputtering gas mixtures at room temperature. The effect of the partial pressure of oxygen on the morphology of ZnO thin film structure and band alignment were investigated. Thickness, and therefore the growth rate of the samples measured from the cross-sectional SEM micrographs, is found to be strongly correlated with the oxygen partial pressure in the sputtering chamber. The optical transmittance spectrometry results show that the absorption edge shifts towards the longer wavelength at higher oxygen partial pressure. X-ray photoelectron spectroscopy (XPS) used for determining the surface chemical structure and valence band offsets show that conduction band can be controlled by changing the sputtering atmosphere.

  6. Superior environment resistance of quartz crystal microbalance with anatase TiO{sub 2}/ZnO nanorod composite films

    Energy Technology Data Exchange (ETDEWEB)

    Qiang, Wei, E-mail: weiqiang.tju@163.com [Tianjin Key Laboratory of Composite and Functional Materials, School of Materials Science and Engineering, Tianjin University, 92 Weijin Road, Tianjin (China); Wei, Li; Shaodan, Wang [Tianjin Key Laboratory of Composite and Functional Materials, School of Materials Science and Engineering, Tianjin University, 92 Weijin Road, Tianjin (China); Yu, Bai [Beijing Institute of Spacecrafts Environment Engineering, Beijing 100094 (China)

    2015-08-30

    Graphical abstract: ZnO nanorod array being prepared by an in situ method on the QCM coated with Au film via hydrothermal process and surface modification with coated TiO{sub 2} by sol–gel methods to form a superhydrophobic TiO{sub 2}/ZnO composite film the anatase TiO{sub 2}/ZnO nanorod composite film with a sharp, pencil-like structure exhibiting excellent superhydrophobicity (water contact angle of 155°), non-sticking water properties, and an autonomous cleaning property under UV irradiation. The anatase TiO{sub 2}/ZnO nanorod composite film facilitates the precise measurement and extended lifetime of the QCM for the detection of organic gas molecules. - Highlights: • This work combines, for the first time, the advantage of the TiO{sub 2}/ZnO composite film on photocatalysis and reversible super-hydrophobic and super-hydrophilic transition, and puts forward a solution to satisfy weatherability of quartz crystal microbalance in long-term application. • The anatase TiO{sub 2}/ZnO nanorod composite film with pencil structure exhibit excellent super-hydrophobicity (water contact angle can reach 155°), no-sticking water properties and self-cleaning property under UV irradiation. • The photocatalysis and reversible super-hydrophobic and super-hydrophilic transition of the TiO{sub 2}/ZnO nanorod composite film is stable in long-term application. - Abstract: The precise measurement of quartz crystal microbalance (QCM) in the detection and weighing of organic gas molecules is achieved due to excellent superhydrophobicity of a deposited film composite. Photocatalysis is utilized as a method for the self-cleaning of organic molecules on the QCM for extended long-term stability in the precision of the instrument. In this paper, ZnO nanorod array is prepared via in situ methods on the QCM coated with Au film via hydrothermal process. Subsequently, a TiO{sub 2}/ZnO composite film is synthesized by surface modification with TiO{sub 2} via sol–gel methods. Results

  7. The formation of anomalous Hall effect depending on W atoms in ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Can, Musa Mutlu, E-mail: musamutlucan@gmail.com [Faculty of Engineering and Natural Sciences, Nanotechnology Research and Application Center, Sabancı University, Tuzla, 34956 İstanbul (Turkey); CNR-SPIN, Universitá di Napoli “Federico II”, Compl. Univ. di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy); Shah, S. Ismat [Department of Physics and Astronomy, Department of Material Science and Engineering, University of Delaware, Newark, DE 19716 (United States); Fırat, Tezer [Department of Physics Engineering, Hacettepe University, Beytepe 06800 Ankara (Turkey)

    2014-06-01

    This article investigates the effects of intrinsic point defects and extrinsic W atoms on magneto electrical properties in the ZnO lattice. The analyses were accomplished for ∼0.5% W including ZnO thin films, grown using a radio frequency (RF) magnetron sputtering system. The polarized spin current dependent magnetic formation was investigated by longitudinal and transverse magneto electrical measurements in a temperature range of 5 K to 300 K. The positive magneto resistivity (PMR) ratios reached 28.8%, 12.7%, and 17.6% at 5 K for thin films, having different post-deposition annealing conditions as a consequence of ionic W dependent defects in the lattice. Furthermore, an anomalous Hall effect, originating from polarized spin currents, was understood from the split in Hall resistance versus magnetic field (R{sub xy}(H)) curves for the thin film with high amount of Zn{sup 2+} and W{sup 6+} ionic defects.

  8. Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

    Institute of Scientific and Technical Information of China (English)

    PENG XingPing; WANG ZhiGuang; SONG Yin; JI Tao; ZANG Hang; YANG YingHu; JIN YunFan

    2007-01-01

    Zinc oxide films with c-axis preferred orientation were deposited on silicon (100)substrates by radio frequency (RF) reactive sputtering. The properties of the samples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400℃, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photoluminescence spectra, and the origin of blue emission was investigated.

  9. Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the sam- ples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400℃, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photolumines- cence spectra, and the origin of blue emission was investigated.

  10. Enhanced photoelectrochemical and optical performance of ZnO films tuned by Cr doping

    Science.gov (United States)

    Salem, M.; Akir, S.; Massoudi, I.; Litaiem, Y.; Gaidi, M.; Khirouni, K.

    2017-04-01

    In this paper, pure and Cr-doped nanostructured Zinc oxide thin films were synthesized by simple and low cost co-precipitation and spin-coating method with Cr concentration varying between 0.5 and 5 at.%. Crystalline structure of the prepared films was investigated by X-ray diffraction (XRD) and Raman spectroscopy techniques. XRD analysis indicated that the films were indexed as the hexagonal phase of wurtzite-type structure and demonstrated a decrease in the crystallite size with increasing Cr doping content. Cr doping revealed a significant effect on the optical measurements such as transmission and photoluminescence properties. The optical measurements indicated that Cr doping decreases the optical band gap and it has been shifted from 3.41 eV for pure ZnO film to 3.31 eV for 5 at.% Cr-doped one. The photoelectrochemical (PEC) sensing characteristics of Cr-doped ZnO layers were investigated. Amongst all photo-anodes with different Cr dopant concentration, the 2 at.% Cr incorporated ZnO films exhibited fast response and higher photoconduction sensitivity.

  11. Influence of In doping on electro-optical properties of ZnO films

    Indian Academy of Sciences (India)

    A P Rambu; D Sirbu; A V Sandu; G Prodan; V Nica

    2013-04-01

    Thin metallic films of Zn and In/Zn were deposited onto glass substrates by thermal evaporation under vacuum. The metallic films were submitted to a thermal oxidation in air, at 623 K, for different oxidation times (30–90 min), in order to be oxidized. Structural andmorphological analyses (X-ray diffraction, transmission electron microscopy and scanning electron microscopy) revealed that the obtained undoped and In-doped ZnO thin films possess a polycrystalline structure. Transmission spectra were recorded in spectral domain from 280 to 1400 nm. The influence of In doping and oxidation parameters as well, on the optical parameters (transmittance, optical bandgap, Urbach energy) were analysed. It was clearly evidenced that by In doping, the optical properties of ZnO films were improved. The temperature dependence of electrical conductivity was studied using surface-type cells with Ag electrodes. The obtained results indicate that In-doped ZnO films exhibit an enhancement of electrical conductivity with few orders of magnitude when compared with non-doped ones.

  12. Epitaxial ZnO/LiNbO{sub 3}/ZnO stacked layer waveguide for application to thin-film Pockels sensors

    Energy Technology Data Exchange (ETDEWEB)

    Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp; Fukuda, Hiroshi [NTT Device Innovation Center, NTT Corporation 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

    2015-05-15

    We produced slab waveguides consisting of a LiNbO{sub 3} (LN) core layer that was sandwiched with Al-doped ZnO cladding layers. The ZnO/LN/ZnO stacked layers were grown on sapphire C-planes by electron cyclotron resonance (ECR) plasma sputtering and were subjected to structural, electrical, and optical characterizations. X-ray diffraction confirmed that the ZnO and LN layers were epitaxial without containing misoriented crystallites. The presence of 60°-rotational variants of ZnO and LN crystalline domains were identified from X-ray pole figures. Cross-sectional transmission electron microscopy images revealed a c-axis orientated columnar texture for LN crystals, which ensured operation as electro-optic sensors based on optical anisotropy along longitudinal and transversal directions. The interfacial roughness between the LN core and ZnO bottom layers as well as that between the ZnO top and the LN core layers was less than 20 nm, which agreed with surface images observed with atomic force microscopy. Outgrowth of triangular LN crystalline domains produced large roughness at the LN film surface. The RMS roughness of the LN film surface was twice that of the same structure grown on sapphire A-planes. Vertical optical transmittance of the stacked films was higher than 85% within the visible and infrared wavelength range. Following the approach adopted by Teng and Man [Appl. Phys. Lett. 56, 1734 (1990)], ac Pockels coefficients of r{sub 33} = 24-28 pm/V were derived for c-axis oriented LN films grown on low-resistive Si substrates. Light propagation within a ZnO/LN/ZnO slab waveguide as well as within a ZnO single layer waveguide was confirmed. The birefringence of these waveguides was 0.11 for the former and 0.05 for the latter.

  13. Structural, morphological, optical and opto-thermal properties of Ni-doped ZnO thin films using spray pyrolysis chemical technique

    Indian Academy of Sciences (India)

    S Rajeh; A Barhoumi; A Mhamdi; G Leroy; B Duponchel; M Amlouk; S Guermazi

    2016-02-01

    Nickel-doped zinc oxide thin films (ZnO : Ni) at different percentages were deposited on glass substrates using a chemical spray technique. The effect of Ni concentration on the structural, morphological, optical and photoluminescence (PL) properties of the ZnO : Ni thin films were investigated. X-ray diffraction analysis revealed that all films consist of single phase ZnO and was well crystallized in würtzite phase with the crystallites preferentially oriented towards the (002) direction parallel to the c-axis. The optical transmittance measurement was found to be higher than 90%, the optical band gap values of ZnO thin films decreased after doping from 3.29 to 3.21 eV. A noticeable change in optical constants was observed between undoped and Ni-doped ZnO. Room-temperature PL is observed for ZnO, and Ni-doped ZnO thin films.

  14. Effect of aluminium doping on structural and optical properties of ZnO thin films by sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Vijayaprasath, G.; Murugan, R.; Ravi, G., E-mail: raviganesa@rediffmail.com, E-mail: gravicrc@gmail.com [Department of Physics, Alagappa University, Karaikudi – 630003 (India); Hayakawa, Y. [Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 (Japan)

    2015-06-24

    We systematically investigated the structural, morphological and optical properties of 0.05 mol % Al doped ZnO (Al:ZnO) thin films deposited on glass substrates by sol-gel spin coating method. The influences of Al doping in ZnO thin films are characterized by Powder X-ray diffraction study. ZnO and Al:ZnO thin films have showed hexagonal wurtzite structure without any secondary phase in c-axis (002) orientation. The SEM images also proved the hexagonal rod like morphologies for both films. All the films exhibited transmittance of 70-80% in the visible range up to 800 nm and cut-off wavelength observed at ∼390 nm corresponding to the fundamental absorption of ZnO. The band gap of the ZnO thin films slightly widened with the Al doping. The photoluminescence properties have been studied for Al: ZnO thin films and the results are presented in detail.

  15. Localized Surface Plasmons Enhanced Ultraviolet Emission of ZnO Films

    Institute of Scientific and Technical Information of China (English)

    LIU Yan-Song; LU Hai-Fei; XU Xiao-Liang; GONG Mao-Gang; LIU Ling; YANG Zhou

    2011-01-01

    @@ ZnO and ZnO/Agfilms are grown on Si(111) substrates by rf magnetron sputtering at room temperature.After annealing,it is found that the ultraviolet(UV) emission of ZnO/Ag films strongly depends on the thickness of the initial internal Ag layer.During the annealing process,Ag nanoparticles are formed and diffused into the ZnO film.The resonant coupling between localized surface plasmons(LSPs) of Ag nanoparticles and ZnO enhances the UV emission.The largest UV enhancement over 12 times is found when the initial internal Ag layer is 10nm.It is also observed that the diffusion of Ag nanoparticles destroys the ZnO crystal quality in different grades,depending on the sizes of the Ag nanoparticles.The poor crystal quality induces bad UV emission.It is concluded that the UV emission is the result of the competition between the LSP enhancement and the thermal diffusion destroying effect from Ag nanoparticles.%ZnO and ZnO/Ag films are grown on Si(lll)substrates by rf magnetron sputtering at room temperature.After annealing, it is found that the ulteaviolet(UV)emission of ZnO/Ag films strongly depends on the thickness of the initial internal Ag layer. During the annealing process,Ag nanoparticles are formed and diffused into the ZnO film.The resonant coupling betweebn localized surface plasmons(LSPs)of Ag nanoparticles and ZnO enhannces the UV emission.The largest UV enhancement over 12 times is found when the initial internal Ag layer is 10nm.It is also observed that the diffusion of Ag nanoparticles destroys the ZnO crystal quality in different grades,depending on the sizes of the Ag nanoparticles.The poor crystal quality induces bad UV emission.It is concluded that the UV emission is the result of the competotion berween the LSP enhancement and the thermal diffusion destroying effect from Ag nanoparticles.

  16. The effect of heat treatment on the physical properties of sol-gel derived ZnO thin films

    Science.gov (United States)

    Raoufi, Davood; Raoufi, Taha

    2009-03-01

    Zinc oxide (ZnO) thin films were deposited on microscope glass substrates by sol-gel spin coating method. Zinc acetate (ZnAc) dehydrate was used as the starting salt material source. A homogeneous and stable solution was prepared by dissolving ZnAc in the solution of monoethanolamine (MEA). ZnO thin films were obtained after preheating the spin coated thin films at 250 °C for 5 min after each coating. The films, after the deposition of the eighth layer, were annealed in air at temperatures of 300 °C, 400 °C and 500 °C for 1 h. The effect of thermal annealing in air on the physical properties of the sol-gel derived ZnO thin films are studied. The powder and its thin film were characterized by X-ray diffractometer (XRD) method. XRD analysis revealed that the annealed ZnO thin films consist of single phase ZnO with wurtzite structure (JCPDS 36-1451) and show the c-axis grain orientation. Increasing annealing temperature increased the c-axis orientation and the crystallite size of the film. The annealed films are highly transparent with average transmission exceeding 80% in the visible range (400-700 nm). The measured optical band gap values of the ZnO thin films were between 3.26 eV and 3.28 eV, which were in the range of band gap values of intrinsic ZnO (3.2-3.3 eV). SEM analysis of annealed thin films has shown a completely different surface morphology behavior.

  17. Dependence of Photovoltaic Property of ZnO/Si Heterojunction Solar Cell on Thickness of ZnO Films

    Institute of Scientific and Technical Information of China (English)

    ZHANG Wei-Ying; ZHONG Sheng; SUN Li-Jie; FU Zhu-Xi

    2008-01-01

    N-ZnO/p-Si heterojunctions are prepared by sputtering deposition of intrinsic ZnO films on p-Si substrates.Thicknesses of ZnO films are altered by varying the deposition time from I h to 3 h.The electrical properties of these structures are analysed from capacitance-voltage ( C- V) and current-voltage (I- V) characteristics performed in a dark room.The results demonstrated that all the samples show strong rectifying behaviour.Photovoltalc property for the samples with different thicknesses of ZnO films are investigated by measuring open circuit voltage and short circuit current.It is found that photovoltages are kept to be almost constant of 32OmV along with the thickness while photocurrents changing a lot.The variation mechanism of the photovoltalc effect as a function of thickness of ZnO films is investigated.

  18. (0 0 2-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

    Directory of Open Access Journals (Sweden)

    Guo Dongyun

    2016-09-01

    Full Text Available Zinc acetate was used as a starting material to prepare Zn-solutions from solvents and ligands with different boiling temperature. The ZnO thin films were prepared on Si(1 0 0 substrates by spin-coating method. The effect of baking temperature and boiling temperature of the solvents and ligands on their morphologies and orientation was investigated. The solvents and ligands with high boiling temperature were favorable for relaxation of mechanical stress to form the smooth ZnO thin films. As the solvents and ligands with low boiling temperature were used to prepare Zn-solutions, the prepared ZnO thin films showed (0 0 2 preferred orientation. As n-propanol, 2-methoxyethanol, 2-(methylaminoethanol and monoethanolamine were used to prepare Zn-solutions, highly (0 0 2-oriented ZnO thin films were formed by adjusting the baking temperature.

  19. Characterization of the ZnO thin film prepared by single source chemical vapor deposition under low vacuum condition

    Institute of Scientific and Technical Information of China (English)

    DENG; Hong(邓宏); B.; GONG; A.; J.; Petrella; J.; J.; Russell; R.; N.; Lamb

    2003-01-01

    A novel technique is developed for growing high quality ZnO thin films by means of single source chemical vapor deposition (SS CVD) under low vacuum conditions with the precursor of zinc carbamate Zn4O(CO2Net2)6. SEM, AFM and XRD studies show that the resultant thin films have high density, smooth surface, uniform polycrystalline structure and excellent c-axis orientation. XPS investigation indicates that the ZnO films are free of decomposed precursor residues in the bulk. Careful quantitative XPS analysis reveals that the ZnO films are stoichiometric with O/Zn atomic ratio very close to that of ZnO single crystal.

  20. Effects of sapphire substrates surface treatment on the ZnO thin films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yinzhen [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)], E-mail: agwyz@yahoo.com.cn; Chu Benli [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)

    2008-06-01

    The surface treatment effects of sapphire substrate on the ZnO thin films grown by magnetron sputtering were studied. The sapphire substrates properties have been investigated by means of atomic force microscopy (AFM) and X-ray diffraction rocking curves (XRCs). The results show that sapphire substrate surfaces have the best quality by CMP with subsequent chemical etching. The surface treatment effects of sapphire substrate on the ZnO thin films were examined by X-ray diffraction (XRD) and photoluminescence (PL) measurements. Results show that the intensity of (0 0 2) diffraction peak of ZnO thin films on sapphire substrates treated by CMP with subsequent chemical etching was strongest, FWHM of (0 0 2) diffraction peak is the narrowest and the intensity of UV peak of PL spectrum is strongest, indicating surface treatment on sapphire substrate preparation may improve ZnO thin films crystal quality and photoluminescent property.

  1. Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    CAO Qiang; DENG Jiang-Xia; LIU Guo-Lei; CHEN Yan-Xue; YAN Shi-Shen

    2007-01-01

    High quality Co-doped ZnO thin films are grown on single crystalline Al2O3(0001) and ZnO(0001) substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450 ℃. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction (RHEED) and ex-situ high resolution x-ray diffraction (HRXRD). The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co2+ substituting Zn2+ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures TC above room temperature.

  2. Heteroepitaxial ZnO films on diamond: Optoelectronic properties and the role of interface polarity

    Energy Technology Data Exchange (ETDEWEB)

    Schuster, Fabian, E-mail: Fabian.Schuster@wsi.tum.de; Hetzl, Martin; Garrido, Jose A.; Stutzmann, Martin [Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, 85748 Garching (Germany); Magén, Cesar [Laboratorio de Microscopías Avanzadas (LMA) - Instituto de Nanociencia de Aragon (INA) and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain); Fundación ARAID, 50018 Zaragoza (Spain); Arbiol, Jordi [Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, CAT (Spain); Institució Catalana de Recerca i Estudis Avançats (ICREA), 08010 Barcelona, CAT (Spain)

    2014-06-07

    We demonstrate the growth of heteroepitaxial ZnO films on (110) diamond substrates by molecular beam epitaxy and report on a major advance in structural quality, as confirmed by XRD and high-resolution TEM measurements. The growth direction is found to be along the polar c-axis with Zn-polarity, deduced from annular bright-field scanning transmission electron microscopy imaging. This is important information, as simulations of the electronic band structure reveal the ZnO polarity to dominate the electronic structure of the interface: the formation of a two-dimensional electron gas on the ZnO side or a two-dimensional hole gas on the diamond side are predicted for Zn- and O-polarity, respectively. In addition, photoluminescence and absorption studies exhibit good optical properties and reveal stimulated emission for optical excitation above a threshold of 30 kW/cm{sup 2}.

  3. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

    KAUST Repository

    Alshammari, Fwzah H.

    2016-08-24

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

  4. Effect of thermal annealing on properties of polycrystalline ZnO thin films

    Science.gov (United States)

    Gritsenko, L. V.; Abdullin, Kh. A.; Gabdullin, M. T.; Kalkozova, Zh. K.; Kumekov, S. E.; Mukash, Zh. O.; Sazonov, A. Yu.; Terukov, E. I.

    2017-01-01

    Electrical properties (density, carriers mobility, resistivity), optical absorption and photoluminescence spectra of ZnO, grown by MOCVD and hydrothermal methods, have been investigated depending on the annealing and treatment modes in a hydrogen plasma. It has been shown that the electrical and photoluminescent (PL) properties of ZnO are strongly dependent on gas atmosphere during annealing. The annealing in oxygen atmosphere causes a sharp drop of carrier mobility and films conductivity due to the absorption of oxygen on grain boundaries. The process of ZnO electrical properties recovery by the thermal annealing in inert atmosphere (nitrogen), in oil (2×10-2 mbar) and oil-free (1×10-5 mbar) vacuum has been investigated. The hydrogen plasma treatment influence on the intensity of near-band-gap emission (NBE) has been studied. The effect of annealing and subsequent plasma treatment on PL intensity depends on the gas atmosphere of preliminary thermal annealing.

  5. Enhanced luminescence in Eu-doped ZnO nanocrystalline films

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Keigo, E-mail: ksuzuki@murata.com; Murayama, Koji; Tanaka, Nobuhiko [Murata Manufacturing Co., Ltd., 10-1, Higashikotari 1-chome, Nagaokakyo, Kyoto 617-8555 (Japan)

    2015-07-20

    We found an enhancement of Eu{sup 3+} emissions in Eu-doped ZnO nanocrystalline films fabricated by microemulsion method. The Eu{sup 3+} emission intensities were increased by reducing annealing temperatures from 633 K to 533 K. One possible explanation for this phenomenon is that the size reduction enhances the energy transfer from ZnO nanoparticles to Eu{sup 3+} ions. Also, the shift of the charge-transfer band into the low-energy side of the absorption edge is found to be crucial, which seems to expedite the energy transfer from O atoms to Eu{sup 3+} ions. These findings will be useful for the material design of Eu-doped ZnO phosphors.

  6. Electrodeposition of ZnO thin films on n-Si(100)

    Energy Technology Data Exchange (ETDEWEB)

    Dalchiele, E.A.; Giorgi, P.; Marotti, R.E. [Facultad de Ingenieria, Instituto de Fisica, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay); Martin, F.; Ramos-Barrado, J.R.; Ayouci, R.; Leinen, D. [Laboratorio de Materiales y Superficie, Unidad asociada al CSIC, Departamento de Fisica Aplicada and Ingenieria Quimica, Facultad de Ciencias, Universidad de Malaga, 29071 Malaga (Spain)

    2001-12-31

    In this study, ZnO thin films have been deposited onto monocrystalline n-type Si(100) by electrodeposition at different applied potentials. XRD shows a preferential orientation (0002) that increases when the applied cathodic potential increases. The XPS analysis presents a Zn/O composition close to stoichiometric. SEM micrographs show a compact structure with localized platelets with a grain size of about 10{mu}m. However, crystallite size determined by the Scherrer method shows a size close to 2.50x10{sup -2}{mu}m, then the grains can be considered as clusters of crystallites. Optical measurements were made on samples deposited on ITO/glass through the same procedures giving a band gap of 3.3eV in agreement with the reported values for ZnO at room temperature.

  7. Gd doping effect on structural, electrical and magnetic properties of ZnO thin films synthesized by sol-gel spin coating technique

    Science.gov (United States)

    Kumar, Sanjeev; Thangavel, Rajalingam

    2017-03-01

    Nanocrystalline Gd-doped ZnO thin films were deposited on sapphire (0001) substrates using sol-gel spin coating technique. The structural and optical properties of deposited thin films were characterized by X-ray diffraction (XRD) and micro Raman spectroscopy. Structural and optical studies show that the doped Gd ions occupy Zn sites retaining the wurtzite symmetry. Photoluminescence (PL) studies reveal the presence of oxygen vacancies in Gd doped ZnO thin films. The resistivity of Gd doped ZnO thin film decreases with increase in Gd doping upto 4%. Gd-doped ZnO films demonstrate weak magnetic ordering at room temperature.

  8. Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layer

    OpenAIRE

    2003-01-01

    The growth mode of ZnO thin films can be well regulated in a molecular layer-by-layer growth by employing a ZnO buffer layer deposited on a lattice-matched ScAlMgO4 substrate and annealed at high temperature. The annealed buffer layer has atomically flat surface and relaxed (strain-free) crystal structure. The intensity oscillation of reflection high-energy electron diffraction persisted for more than a 100-nm film deposition under optimized conditions on such a buffer layer. Thus prepared th...

  9. Structural and optical properties of dense vertically aligned ZnO nanorods grown onto silver and gold thin films by galvanic effect with iron contamination

    Energy Technology Data Exchange (ETDEWEB)

    Scarpellini, D.; Paoloni, S.; Medaglia, P.G. [Department of Industrial Engineering, University of Rome “Tor Vergata”, 00133 Rome (Italy); Pizzoferrato, R., E-mail: pizzoferrato@uniroma2.it [Department of Industrial Engineering, University of Rome “Tor Vergata”, 00133 Rome (Italy); Orsini, A.; Falconi, C. [Department of Electronic Engineering, University of Rome “Tor Vergata”, 00133 Rome (Italy)

    2015-05-15

    Highlights: • ZnO nanorods were grown on Au and Ag films in aqueous solution by galvanic effect. • The method is prone to metal contamination which can influence the ZnO properties. • Iron doping improves the lattice matching between ZnO and the substrate. • Energy levels of point defects are lowered and the light emission is red-shifted. • Galvanic-induced nucleation starts and proceeds continuously during the growth. - Abstract: Dense arrays of vertically aligned ZnO nanorods have been grown onto either silver or gold seedless substrates trough a simple hydrothermal method by exploiting the galvanic effect between the substrate and metallic parts. The nanorods exhibit larger bases and more defined hexagonal shapes, in comparison with standard non-galvanic wet-chemistry synthesis. X-ray diffraction (XRD) shows that the iron contamination, associated with the galvanic contact, significantly improves the in-plane compatibility of ZnO with the Au and Ag cubic lattice. Photoluminescence (PL) measurements indicate that the contamination does not affect the number density of localized defects, but lowers their energy levels uniformly; differently, the band-edge emission is not altered appreciably. Finally, we have found that the ZnO hetero-nucleation by galvanic effect initiates at different times in different sites of the substrate area. Our results can be useful for the fabrication of high performance piezonanodevices comprising high-density metal-to-ZnO nanoscaled junctions without intermediate polycrystalline layers.

  10. Thin films of conductive ZnO patterned by micromolding resulting in nearly isolated features.

    Science.gov (United States)

    Göbel, Ole F; Blank, Dave H A; ten Elshof, Johan E

    2010-02-01

    Patterned and continuous thin films of conductive Al-doped zinc oxide (ZnO:Al) were prepared on different substrates from a polymeric precursor solution. Their electric conductivity and light transmittance (for visible and UV light) was measured at room temperature. By means of a simple device, conductive ZnO:Al films with high fidelity patterns with features of 2-20 microm width could be obtained by simply micromolding the liquid precursor film prior to heat treatment. The individual features were interconnected by a very thin residual ZnO layer.

  11. Characterization of Undoped and Cu-Doped ZnO Thin Films Deposited on Glass Substrates by Spray Pyrolysis

    Institute of Scientific and Technical Information of China (English)

    Metin Bedir; Mustafa (O)ztas; A. Necmeddin Yazici; E. Vural Kafadar

    2006-01-01

    @@ Undoped and copper doped zinc oxide (ZnO) thin films have been prepared on glass substrates by spray pyrolysis technique. The films were doped with copper using the direct method by addition of a copper salt (CuCl2) in the spray solution of ZnO. Variation of structural, electrical, optical and thermoluminescence (TL) properties with doping concentrations is investigated in detail.

  12. Effects of the ZnO buffer layer and Al proportion on AZO film properties

    Institute of Scientific and Technical Information of China (English)

    SUI Cheng-hua; LIU Bin; XU Tian-ning; YAN Bo; WEI Gao-yao

    2012-01-01

    To evaluate the influence of the ZnO buffer layer and AI proportion on the properties ofZnO:AI (AZO)/ZnO bi-layer films,a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporation.The X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness.The electrical properties of the films are investigated.The carrier concentration and Hall mobility both increase with the increase of buffer layer thickness.However,the resistivity reaches the lowest at about 50 nm-thick buffer layer.The lowest resistivity and the maximum Hall mobility are both obtained at 1 wt% AI concentration.But the optical transmittance of all the films is greater than 80% regardless of the buffer layer thickness with AI concentration lower than 5 wt% in the visible region.

  13. Al-doped ZnO Thin Films for Ethanol Sensors

    Science.gov (United States)

    Nulhakim, Lukman; Nugraha; Nuruddin, Ahmad; Suyatman; Yuliarto, Brian

    2011-12-01

    Al doped ZnO (AZO) is done to understand the effect of Al dopant on ZnO. The sensor response condition will be analyzed for ethanol detection. Chemical Bath Deposition (CBD) method is used to fabrication pure ZnO and AZO thin films. Al dopant concentrations used in this study is 2.9 at% Al. The crystallinity, composition and morphology were investigated by using XRD, EDS and SEM. The ZnO and AZO gas sensors were exposed to different concentrations of ethanol at room temperature, 2.5%, 5% and 7.5% volume ethanol, respectively. The sensor response at low concentrations (2.5% V) for pure ZnO sample is 70.88% and 88.57% for high concentrations of ethanol (7.5% V). The highest sensor response for AZO sample is 95.29% at low concentrations (2.5% V) and 96.68% V at the high concentration (7.5% V).

  14. Effect of Nano ZnO on the Optical Properties of Poly(vinyl chloride Films

    Directory of Open Access Journals (Sweden)

    Wasan Al-Taa’y

    2014-01-01

    Full Text Available Optical properties of pure and doped poly(vinyl chloride (PVC films, prepared by using casting technique, with different nanosize zinc oxide (ZnO concentrations (1–20 wt% have been studied. Parameters such as extinction coefficient, refractive index, real and imaginary parts, Urbach energy, optical conductivity, infinitely high frequency dielectric constant, and average refractive index were studied by using the absorbance and transmittance measurement from computerized UV-visible spectrophotometer (Shimadzu UV-1601 PC in the spectral range 200–800 nm. This study reveals that the optical properties of PVC are affected by the doping of ZnO where the absorption increases and transmission decreases as ZnO concentration increases. The extinction coefficient, refractive index, real and imaginary parts, infinitely high frequency dielectric constant, and average refractive index values were found to increase with increasing impurity percentage. The Urbach energy values are found to be decreasing with increasing ZnO concentration. The optical conductivity increased with photon energy after being doped and with the increase of ZnO concentration.

  15. Preparation of dye-adsorbing ZnO thin films by electroless deposition and their photoelectrochemical properties.

    Science.gov (United States)

    Nagaya, Satoshi; Nishikiori, Hiromasa

    2013-09-25

    Dye-adsorbing ZnO thin films were prepared on ITO films by electroless deposition. The films were formed in an aqueous solution containing zinc nitrate, dimethylamine-borane, and eosin Y at 328 K. The film thickness was 1.2-2.0 μm. Thinner and larger-plane hexagonal columns were produced from the solution containing a higher concentration of eosin Y. A photocurrent was observed in the electrodes containing such ZnO films during light irradiation. The photoelectrochemical performance of the film was improved by increasing the concentration of eosin Y because of increases in the amount of absorbed photons and the electronic conductivity of ZnO.

  16. Structural and optical properties of Ni added ZnO thin films deposited by sol-gel method

    Science.gov (United States)

    Murugan, R.; Vijayaprasath, G.; Mahalingam, T.; Anandhan, N.; Ravi, G.

    2014-04-01

    Pure and Ni added zinc oxide thin films were prepared by sol-gel method using spin-coating technique on glass substrates. The influences of nickel on ZnO thin films are characterized by Powder X-ray diffraction study. Pure and Ni added thin films are hexagonal wurtzite structure without any secondary phase in c-axis orientation. The SEM images of thin films show uniform sphere like particles covered completely on glass substrates. All the films exhibit transmittance of 85-95% in the visible range up to 800nm and cut-off wavelength observed at 394 nm corresponding to the fundamental absorption of ZnO. The photoluminescence property for pure and Ni added ZnO thin films has been studied and results are presented in detail.

  17. Thickness-dependent growth orientation of F-doped ZnO films formed by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Kyung-Mun; Choi, Yong-June; Park, Hyung-Ho, E-mail: hhpark@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Yeom, Geun Young [Department of Advanced Materials Science and Engineering, and SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746 (Korea, Republic of)

    2016-01-15

    ZnO thin films were doped with fluorine using atomic layer deposition (ALD) with an in-house F source at a deposition temperature of 140 °C. Structural and morphological properties of the resulting F-doped ZnO (ZnO:F) films were investigated by x-ray diffraction analysis, field emission scanning electron microscopy, and grazing incidence wide-angle x-ray diffraction. During the initial growth stage of up to 200 ALD cycles, no difference was observed between the preferred growth orientations of undoped ZnO and ZnO:F films. However, after 300 ALD cycles, ZnO and ZnO:F films showed (002) and (100) preferred orientation, respectively. This difference in preferred growth orientation arose from the perturbation-and-passivation effect of F doping, which involves F anions filling the oxygen-related defect sites in the ZnO lattice. Ultraviolet photoelectron spectroscopic analyses were carried out to investigate the surface plane dependency of the films' work functions, which confirmed that the ZnO and ZnO:F films had different growth behaviors.

  18. ZnO sensing film thickness effects on the sensitivity of surface plasmon resonance sensors with angular interrogation

    Energy Technology Data Exchange (ETDEWEB)

    Bao Ming; Li Ge; Jiang Dongmei; Cheng Wenjuan [State Key Laboratory of Precision Spectroscopy, and Department of Physics, East China Normal University, Shanghai 200062 (China); Ma Xueming, E-mail: xmma@phy.ecnu.edu.cn [State Key Laboratory of Precision Spectroscopy, and Department of Physics, East China Normal University, Shanghai 200062 (China)

    2010-07-25

    The effects of ZnO sensing film thickness on the surface plasmon resonance (SPR) curve have been investigated. ZnO sensing films with the thickness of 20 nm, 30 nm, 200 nm, 220 nm and 240 nm have been deposited onto Ag/glass substrates by radio frequency magnetron (RF) sputtering and thermally treated at 300 deg. C in air for 1 h. The surface morphology of the sample was inspected using an atomic force microscope (AFM). The refractive index of the ZnO films was extracted by using spectroscopic ellipsometry (SE). Theoretical analysis of the sensitivity of the SPR sensors with different ZnO sensing film thickness is discussed, and the experimental results are in agreement with the calculated value. Also, the theoretical calculation of the effects of ZnO film thickness on the SPR curves in the presence of different analytes are presented and studied. It is demonstrated that SPR sensors with angular interrogation may attain higher sensitivity and can detect higher surface environment refractive index with proper ZnO sensing film thickness.

  19. Effect of Sb2O3-doped on optical absorption of ZnO thin film

    Institute of Scientific and Technical Information of China (English)

    CHANG Chun-rong; LI Zi-quan; XU Yun-yun

    2006-01-01

    Sb2O3 doped ZnO thin film was prepared by RF magnetron sputtering technique.The influence of Sb2O3 on the structure and the optical absorption of ZnO thin film was studied by XPS,XRD apparatuses and UV-Vis spectrophotometer.The results show that doped Sb2O3 has affected atomic and electronic structures,growth modes of crystal grains and optical absorption of ZnO.The element Sb exists in many forms in the film including transpositional atoms and compounds such as Sb2O3,Zn7Sb2O14 etc.ZnO crystal grains grow in mixing directions.The lattice relaxation and the content of second phases increase when more Sb is doped.The UVA absorption of doped ZnO thin film increases obviously.The ultraviolet absorption peak narrows,absorption intensity increases,the absorption margin becomes steep and moves to shorter wavelength of about 5 nm,and the visible absorption increases in some sort.

  20. Preparation of cadmium-doped ZnO thin films by SILAR and their characterization

    Indian Academy of Sciences (India)

    S Mondal; P Mitra

    2012-10-01

    Cadmium-doped zinc oxide (Cd : ZnO) thin films were deposited from sodium zincate bath following a chemical dipping technique called successive ion layer adsorption and reaction (SILAR). Structural characterization by X-ray diffraction reveals that polycrystalline nature of the films increases with increasing cadmium incorporation. Particle size evaluated using X-ray line broadening analysis shows decreasing trend with increasing cadmium impurification. The average particle size for pure ZnO is 36.73nm and it reduces to 29.9 nm for 10% Cd:ZnO, neglecting strain broadening. The strong preferred c-axis orientation is lost due to cadmium doping and degree of polycrystallinity of the films also increases with increasing Cd incorporation. Incorporation of cadmium was confirmed from elemental analysis using EDX. The optical bandgap of the films decreases with increasing Cd dopant. The value of fundamental absorption edge is 3.18 eV for pure ZnO and it decreases to 3.11 eV for 10% Cd:ZnO.

  1. Improved electrical, optical, and structural properties of undoped ZnO thin films grown by water-mist-assisted spray pyrolysis

    Science.gov (United States)

    Martínez Pérez, L.; Aguilar-Frutis, M.; Zelaya-Angel, O.; Muñoz Aguirre, N.

    2006-08-01

    Undoped ZnO thin films were prepared using the ultrasonic spray pyrolysis deposition technique with zinc acetylacetonate dissolved in N,N-dimethylformamide as the source materials solution. The addition of water mist in a parallel flux to the spray solution stream was also used during deposition of the films. The addition of water mist improved the electrical characteristics of the ZnO films. Fresh ZnO samples were then thermally annealed in a H2 reducing atmosphere. X-ray diffraction patterns show mainly the wurzite crystalline ZnO phase in the films. An electrical resistivity ( ) of around 2.7 × 10-2 cm was measured at room temperature for the best undoped ZnO film. is approximately one order of magnitude lower than the resistivities found in undoped ZnO films obtained by means of similar non-vacuum deposition techniques.

  2. Preparation and characterization of highly photosensitive ZnO thin films

    Science.gov (United States)

    Jiménez González, Antonio E.; Nair, P. K.

    1996-07-01

    Highly photosensitive ZnO films were prepared by the chemical technique Successive Ion Layer Adsorption and Reaction (SILAR). The films posses high optical transmittance (>90%) in the VIS and IR ranges. The cristallinity, orientation of the crystallites and surface morphology undergo changes with annealing. The optical transmittance and reflectance measurements indicated changes in the position of the optical absorption edge: shifting from 353 nm to 366 nm when annealed at 450 °C for 2 hours. The films are highly photosensitive, offering photocurrent to dark current ratio of 105, in as prepared films under 900 Wm-2 illumination from a solar simulator. Annealing in oxygen, hydrogen and vacuum improved the dark conductivity and the photoconductivity of the films. This effect is related to the modification of the defect statistics of the films and involves cation interstitials and anion vacancies. The studies indicate that the ZnO films prepared by the SILAR process may be used, with appropriated postdeposition treatments, for specific applications.

  3. The Theoretical Investigation and Analysis of High-Performance ZnO Double-Gate Double-Layer Insulator Thin-Film Transistors

    Institute of Scientific and Technical Information of China (English)

    GAO Hai-Xia; HU Rong; YANG Yin-Tang

    2012-01-01

    A novel structure of a ZnO thin-film transistor with a double-gate and double-layer insulator is proposed to improve device performance.Compared with the conventional ZnO thin-film transistor structure,the novel thinfilm transistor has a higher on-state current,steeper sub-threshold characteristics and a lower threshold voltage,owing to the double-gate and high-k dielectric.Based on two-dimensional simulation,the potential channel distribution and the reasons for the improvement in performance are investigated.%A novei structure of a ZnO thin-film transistor with a double-gate and double-layer insulator is proposed to improve device performance. Compared with the conventional ZnO thin-Rim transistor structure, the novel thin-Sim transistor has a higher on-state current, steeper sub-threshold characteristics and a lower threshold voltage, owing to the double-gate and high-k dielectric. Based on two-dimensional simulation, the potential channel distribution and the reasons for the improvement in performance are investigated.

  4. Electrodeposition of Mg doped ZnO thin film for the window layer of CIGS solar cell

    Science.gov (United States)

    Wang, Mang; Yi, Jie; Yang, Sui; Cao, Zhou; Huang, Xiaopan; Li, Yuanhong; Li, Hongxing; Zhong, Jianxin

    2016-09-01

    Mg doped ZnO (ZMO) film with the tunable bandgap can adjust the conduction band offset of the window/chalcopyrite absorber heterointerface to positive to reduce the interface recombination and resulting in an increasement of chalcopyrite based solar cell efficiency. A systematic study of the effect of the electrodeposition potential on morphology, crystalline structure, crystallographic orientation and optical properties of ZMO films was investigated. It is interestingly found that the prepared doped samples undergo a significant morphological change induced by the deposition potential. With negative shift of deposition potential, an obvious morphology evolution from nanorod structrue to particle covered films was observed. A possible growth mechanism for explaining the morphological change is proposed and briefly discussed. The combined optical techniques including absorption, transmission and photoluminescence were used to study the obtained ZMO films deposited at different potential. The sample deposited at -0.9 V with the hexagonal nanorods morphology shows the highest optical transparency of 92%. The photoluminescence spectra reveal that the crystallization of the hexagonal nanorod ZMO thin film deoposited at -0.9 V is much better than the particles covered ZMO thin film. Combining the structural and optical properties analysis, the obtained normal hexagonal nanorod ZMO thin film could potentially be useful in nanostructured chalcopyrite solar cells to improve the device performance.

  5. ZnO thin films on single carbon fibres fabricated by Pulsed Laser Deposition (PLD)

    Science.gov (United States)

    Krämer, André; Engel, Sebastian; Sangiorgi, Nicola; Sanson, Alessandra; Bartolomé, Jose F.; Gräf, Stephan; Müller, Frank A.

    2017-03-01

    Single carbon fibres were 360° coated with zinc oxide (ZnO) thin films by pulsed laser deposition using a Q-switched CO2 laser with a pulse duration τ ≈ 300 ns, a wavelength λ = 10.59 μm, a repetition frequency frep = 800 Hz and a peak power Ppeak = 15 kW in combination with a 3-step-deposition technique. In a first set of experiments, the deposition process was optimised by investigating the crystallinity of ZnO films on silicon and polished stainless steel substrates. Here, the influence of the substrate temperature and of the oxygen partial pressure of the background gas were characterised by scanning electron microscopy and X-ray diffraction analyses. ZnO coated carbon fibres and conductive glass sheets were used to prepare photo anodes for dye-sensitised solar cells in order to investigate their suitability for energy conversion devices. To obtain a deeper insight of the electronic behaviour at the interface between ZnO and substrate I-V measurements were performed.

  6. Physical properties of Ga-doped ZnO thin films by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Prasada Rao, T., E-mail: prasadview@gmail.co [Advanced Materials laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli 620 015 (India); Santhosh Kumar, M.C., E-mail: santhoshmc@nitt.ed [Advanced Materials laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli 620 015 (India)

    2010-09-17

    Research highlights: In this work, we report the structural, optical and electrical properties of the transparent conducting GZO thin films prepared by spray pyrolysis method. We sought optimum deposition conditions yielding GZO films with desired physical properties, specifically good crystalline quality microstructure, low resistivity and high transparency. The electrical conductivity and mobilities of GZO thin films are very good as compared with previous reported spray pyrolysed films. - Abstract: Gallium doped zinc oxide (GZO) thin films were prepared using the simple, flexible and cost-effective spray pyrolysis technique. The physical properties of the films were studied as a function of increasing gallium dopant concentration from 1 to 9 at.%. The films were characterized by various methods to understand their structural, morphological, optical and electrical properties. The X-ray diffraction analysis revealed that the films were polycrystalline in nature having a hexagonal wurtzite type crystal structure with a preferred grain orientation in the (0 0 2) direction. Scanning electron microscopy (SEM) measurements reveal that the surface morphology of the films changes continuously with a decrease in the grain size due to Ga doping. All the films showed nearly 90% of transparency in the entire visible region. A blue shift of the optical band gap was observed with an increase in Ga doping. Room temperature photoluminescence (PL) measurement of the deposited films indicates incorporation of Ga in ZnO lattice. At 3 at.% Ga doping, the film has lowest resistivity of 6.8 x 10{sup -3} cm while the carrier concentration is highest.

  7. Characterization of piesoelectric ZnO thin films and the fabrication of piezoelectric micro-cantilevers

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Raegan Lynn [Iowa State Univ., Ames, IA (United States)

    2005-01-01

    In Atomic Force Microscopy (AFM), a microcantilever is raster scanned across the surface of a sample in order to obtain a topographical image of the sample's surface. In a traditional, optical AFM, the sample rests on a bulk piezoelectric tube and a control loop is used to control the tip-sample separation by actuating the piezo-tube. This method has several disadvantages--the most noticeable one being that response time of the piezo-tube is rather long which leads to slow imaging speeds. One possible solution aimed at improving the speed of imaging is to incorporate a thin piezoelectric film on top of the cantilever beam. This design not only improves the speed of imaging because the piezoelectric film replaces the piezo-tube as an actuator, but the film can also act as a sensor. In addition, the piezoelectric film can excite the cantilever beam near its resonance frequency. This project aims to fabricate piezoelectric microcantilevers for use in the AFM. Prior to fabricating the cantilevers and also part of this project, a systematic study was performed to examine the effects of deposition conditions on the quality of piezoelectric ZnO thin films deposited by RF sputtering. These results will be presented. The deposition parameters that produced the highest quality ZnO film were used in the fabrication of the piezoelectric cantilevers. Unfortunately, the fabricated cantilevers warped due to the intrinsic stress of the ZnO film and were therefore not usable in the AFM. The complete fabrication process will be detailed, the results will be discussed and reasons for the warping will be examined.

  8. Bandgap energy tuning of electrochemically grown ZnO thin films by thickness and electrodeposition potential

    Energy Technology Data Exchange (ETDEWEB)

    Marotti, R.E.; Guerra, D.N.; Machado, G.; Dalchiele, E.A. [Instituto de Fisica, Facultad de Ingenieria, Universidad de la Republica, Julio Herrera y Reissig 565, C.C. 30, Montevideo 11000 (Uruguay); Bello, C. [Unidad Central de Instrumentacion Cientifica UCIC, Facultad de Ciencias, Universidad de la Republica, Igua 4225, C.C. 10773, Montevideo 11400 (Uruguay)

    2004-05-01

    ZnO thin films were electrochemically deposited onto opaque and transparent substrates (copper and ITO). The electrolyte consisted of a 0.1M Zn(NO{sub 3}){sub 2} solution with the initial pH adjusted to 6.0, different electrodeposition potentials from E=-700 to -1200mV (saturated calomel electrode, SCE). The resulting samples have the structural, chemical and morphological properties of hexagonal ZnO, with thickness varying from less than 1{mu}m to almost 30{mu}m. The bandgap energy varies inversely with film thickness, ranging from less than 3.1 to 3.4eV. The bandgap also depends on the electrodeposition potential. This result allows to adjust the desired absorption edge within a 30nm wide region in the UV.

  9. Comparative study of ZnO thin films prepared by different sol-gel route

    Directory of Open Access Journals (Sweden)

    F Esmaieli Ghodsi

    2012-03-01

    Full Text Available   Retraction Notice    The paper "Comparative study of ZnO thin films prepared by different sol-gel route" by H. Absalan and F. E. Ghodsi, which appeared in Iranian Journal of Physics Research, Vol. 11, No. 4, 423-428 (in Farsi is translation of the paper "Comparative Study of ZnO Thin Films Prepared by Different Sol-Gel Route" by F. E. Ghodsi and H. Absalan, which appeared in ACTA PHYSICA POLONICA A, Vol 118 (2010 (in English and for this reason is retracted from this journal.The corresponding author  (and also the first author is the only responsible person for this action.   

  10. Semiconducting Properties of Swift Au Ion-Irradiated ZnO Thin Films at Room Temperature

    Science.gov (United States)

    Kwon, Sera; Park, Hyun-Woo; Chung, Kwun-Bum

    2017-02-01

    The semiconducting properties of Au ion-irradiated ZnO thin films were investigated as a function of ion irradiation dose at room temperature. The Au ion irradiation was conducted with acceleration energy of 130 MeV in the ion dose range from 1 × 1011 to 5 × 1012 ions/cm2. The physical properties showed no change regardless of the Au ion irradiation dose; however, the electrical properties of Au ion-irradiated ZnO thin films changed, depending on the Au ion irradiation dose. The electronic structure drastically changed with the evolution of hybridized molecular orbital structure for the conduction band and band edge states below the conduction band. These remarkable changes in electronic structure correlate with changes in electrical properties, such as carrier concentration and mobility.

  11. Thin Solid Films Topical Special Issue on ZnO related transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Jinn P.; Endo, Tamio; Ellmer, Klaus; Gessert, Tim; Ginley, David

    2016-04-01

    World-wide research activities on ZnO and related transparent conductive oxides (TCO) in thin film, nanostructured, and multilayered forms are driven by the vast potential of these materials for optoelectronic, microelectronic, and photovoltaic applications. Renewed interest in ZnO applications is partly stimulated by cost reduction in material processing and device development. One of the most important issues is doping and alloying with Al, Ga, In, Sn, etc. in order to tune properties. When highly doped, these materials are used as transparent-conducting contacts on solar cells, as well as in catalytic, spintronic, and surface acoustic wave devices. Film growth conditions, including substrate type and orientation, growth temperature, deposition rate, and ambient atmosphere, all play important roles in determining structural, electrical, magnetic, and optical properties.

  12. ZnO薄膜的制备及应用%Preparation and Application of ZnO Films

    Institute of Scientific and Technical Information of China (English)

    陈瀚

    2011-01-01

    The paper introduces ZnO about its crystal structure and photoelectric property,as well as preparation methods about ZnO films and the relative merits of the methods. Sol - gel thchnique is a greatly welcomed chemial method because of its low cost,simple technics,easy to handle and to controtl doping. ZnO films and doping ZnO films have been wide used for its photoelectric property and have a wide developmental foreground.%本文简要介绍了ZnO的晶体结构和其具有的光电性能,然后介绍了薄膜的几种制备方法,并分别阐述了这些方法的优、缺点,以及ZnO薄膜、掺杂ZnO薄膜的应用.

  13. Effects of nitrogen on the growth and optical properties of ZnO thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cui, J B; Thomas, M A; Soo, Y C; Kandel, H; Chen, T P [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States)

    2009-08-07

    ZnO thin films were grown using pulsed laser deposition by ablating a Zn target in various mixtures of O{sub 2} and N{sub 2}. The presence of N{sub 2} during deposition was found to affect the growth of the ZnO thin films and their optical properties. Small N{sub 2} concentrations during growth led to strong acceptor-related photoluminescence (PL), while larger concentrations affected both the intensity and temperature dependence of the emission peaks. In addition, the PL properties of the annealed ZnO thin films are associated with the N{sub 2} concentration during their growth. The possible role of nitrogen in ZnO growth and annealing is discussed.

  14. Growth behavior and field emission property of ZnO nanowire arrays on Au and Ag films

    Directory of Open Access Journals (Sweden)

    Sung Hyun Kim

    2013-09-01

    Full Text Available We propose a facile method to control the growth and areal density of zinc-oxide (ZnO nanowire arrays using gold or silver films deposited on aluminum-doped ZnO (AZO layers coated on glass substrates. Nanowires exceeding 5 μm in length grew on both the glass/AZO-layer and on the glass/AZO-layer/Au-film where the areal array density was controlled primarily by changing the annealing temperature. In contrast, the nanowire arrays grew only on the AZO surface but not on the Ag film owing to the formation of an Ag-oxide layer. We fabricated field emitter devices with density controlled ZnO nanowire arrays and low turn-on electric field of ∼6 V/μm and a field enhancement factor of up to 1188 were obtained with density controlled ZnO nanowire arrays.

  15. Sonicated sol–gel preparation of nanoparticulate ZnO thin films with various deposition speeds: The highly preferred c-axis (0 0 2) orientation enhances the final properties

    Energy Technology Data Exchange (ETDEWEB)

    Malek, M.F., E-mail: firz_solarzelle@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mamat, M.H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Khusaimi, Z. [NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA UiTM, 40450 Shah Alam, Selangor (Malaysia); Sahdan, M.Z. [Microelectronic and Nanotechnology Centre (MiNT), Universiti Tun Hussein Onn Malaysia (UTHM), 86400 Batu Pahat, Johor (Malaysia); Musa, M.Z. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Zainun, A.R. [Faculty of Electrical and Electronics Engineering, Universiti Malaysia Pahang (UMP), Lebuhraya Tun Razak, 26300 Kuantan, Pahang (Malaysia); Suriani, A.B. [Department of Physics, Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris, 35900 Tanjung Malim, Perak (Malaysia); Md Sin, N.D. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Abd Hamid, S.B. [Nanotechnology and Catalysis Research Centre (NANOCAT), Universiti Malaya (UM), 50603 Kuala Lumpur (Malaysia); Rusop, M. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA UiTM, 40450 Shah Alam, Selangor (Malaysia)

    2014-01-05

    Highlights: • Minimum stress of highly c-axis oriented ZnO was grown at suitable deposition speed. • The ZnO crystal orientation was influenced by strain/stress of the film. • Minimum stress/strain of ZnO film leads to lower defects. • Bandgap and defects were closely intertwined with strain/stress. • We report additional optical and electrical properties based on deposition speed. -- Abstract: Zinc oxide (ZnO) thin films have been deposited onto glass substrates at various deposition speeds by a sonicated sol–gel dip-coating technique. This work studies the effects of deposition speed on the crystallisation behaviour and optical and electrical properties of the resulting films. X-ray diffraction (XRD) analysis showed that thin films were preferentially oriented along the (0 0 2) c-axis direction of the crystal. The transformation sequence of strain and stress effects in ZnO thin films has also been studied. The films deposited at a low deposition speed exhibited a large compressive stress of 0.78 GPa, which decreased to 0.43 GPa as the deposition speed increased to 40 mm/min. Interestingly, the enhancement in the crystallinity of these films led to a significant reduction in compressive stress. All films exhibited an average transmittance of greater than 90% in the visible region, with absorption edges at ∼380 nm. The photoluminescence (PL) measurements indicated that the intensity of the emission peaks varied significantly with deposition speed. The optical band gap energy (E{sub g}) was evaluated as 3.276–3.289 eV, which increased with decreasing compressive stress along the c-axis. The energy band gap of the resulting ZnO films was found to be strongly influenced by the preferred c-axis (0 0 2) orientation.

  16. Effects of annealing temperature on the magnetoresistance in Ta/NiFe/Ta films by ZnO intercalations

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Lei, E-mail: Lding@hainu.edu.cn [Key Laboratory of Advanced Materials of Tropical Island Resources, Ministry of Education, Hainan University, Haikou 570228 (China); Yu, Guang-hua; Zhang, Min; Zhao, Chong-jun; Teng, Jiao [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Xiang, Dao-ping [Key Laboratory of Advanced Materials of Tropical Island Resources, Ministry of Education, Hainan University, Haikou 570228 (China)

    2015-09-01

    Zinc oxide (ZnO) exhibiting many superior physical properties was inserted into the Ta/NiFe/Ta films as nano-oxide intercalations. Different annealing temperatures and ZnO thickness significantly affected the magnetoresistance (MR) in NiFe films. The 4-nm thick ZnO film annealed at 200 °C had a MR of 2.41%, which was more than 70% higher than that of the 1-nm thick ZnO annealed film (MR=1.40%). However, the further increase in annealing temperature to 300 °C rapidly deteriorated the MR performance of the films. Diffusion and interface reactions occur between the crystal ZnO and the adjacent NiFe layer. Lower-temperature annealing improved the interface, increasing the specular reflection of spin-polarized electrons to some extent. However, higher-temperature annealing induced severe diffusion and interface reactions, which led to a sharp decline in MR performance. - Highlights: • Combining NiFe with ZnO, thereby producing NiFe/ZnO interfaces. • Investigating the effects of annealing temperatures on the magnetoresistance. • Explaining the corresponding relationship between MR and microstructure.

  17. Carbon monoxide gas sensing properties of Ga-doped ZnO film grown by ion plating with DC arc discharge

    OpenAIRE

    Kishimoto, S; Akamatsu, S; Song, H.; Nomoto, J; Makino, H.; Yamamoto, T

    2014-01-01

    The carbon monoxide (CO) gas sensing properties of low-resistance heavily Ga-doped ZnO thin films were evaluated. The ZnO films with a thickness of 50 nm were deposited at 200 °C by ion plating. The electrical properties of the ZnO films were controlled by varying the oxygen assist gas flow rate during deposition. The CO gas sensitivity of ZnO films with Au electrodes was investigated in nitrogen gas at a temperature of 230 to 330 °C. CO gas concentration was varied in the r...

  18. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation.

    Science.gov (United States)

    Alvarado, Jose Alberto; Maldonado, Arturo; Juarez, Héctor; Pacio, Mauricio; Perez, Rene

    2015-01-01

    This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm), which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.

  19. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2015-04-01

    Full Text Available This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm, which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.

  20. Studies on the properties of sputter-deposited Al-doped ZnO films

    Science.gov (United States)

    Selmi, M.; Chaabouni, F.; Abaab, M.; Rezig, B.

    2008-09-01

    ZnO is a well known material; however, the research interest in this material is still high enough because ZnO is one of the materials with the most potential for optoelectronics due to its promising properties of high conductivity as well as good transparency. In this work, aluminum doped zinc oxide films (ZnO:Al) were deposited by RF magnetron sputtering on glass and silicon substrates with different deposition times of 2, 3 and 4 h. The aim of this work is the study of the deposition time effect on the properties of ZnO:Al films. It is shown that films grow with the hexagonal c-axis perpendicular to the substrate surface. The morphological characteristics show a granular and homogenous surface and the cristallinity of the films is enhanced with increased deposition time. The deposited films show good optical transmittance (80%-90%) in the visible and near infrared spectrum. The calculated band gap is about 3.3 eV. The electrical ZnO:Al/Si(p) junction properties were investigated using the Capacitance-Voltage ( C-V) dependence. Calculations of the built-in potential from classical 1/C2-V characterization give values between 0.54 and 0.71 V. This work shows how the variation of deposition time allows the control of structural, electrical and optical properties of the films.

  1. ZnO(101) films by pulsed reactive crossed-beam laser ablation

    Indian Academy of Sciences (India)

    S Angappane; N R Selvi; G U Kulkarni

    2009-06-01

    We have employed pulsed reactive crossed-beam laser ablation (PRCLA) to deposit a (101) oriented ZnO film. In this method, a supersonic jet of oxygen pulse is made to cross the laser plume from a zinc metal target while being carried to the Si(111) substrate. The obtained deposit was nanocrystalline ZnO as confirmed by a host of characterization techniques. When the substrate was held at varying temperatures, from room temperature to 900°C, the crystallinity of the obtained films increased as expected, but importantly, the crystallographic orientation of the films was varied. High substrate temperatures produced the usual (001) oriented films, while lower substrate temperatures gave rise to increasingly (101) oriented films. The substrate held at room temperature contained only the (101) orientation. The film morphology also varied with the substrate temperature, from being nanoparticulate to rod-like deposits for higher deposition temperatures. Surprisingly, the (101) orientation showed reactivity with acetone forming carbonaceous nanostructures on the surface.

  2. Oxidation of ZnO thin films during pulsed laser deposition process

    Indian Academy of Sciences (India)

    E De Posada; L Moreira; J Pérez De La Cruz; M Arronte; L V Ponce; T Flores; J G Lunney

    2013-06-01

    Pulsed laser deposition of ZnO thin films, using KrF laser, is analysed. The films were deposited on (001) sapphire substrates at 400 °C, at two different oxygen pressures (0.3 and 0.4 mbar) and two different target–substrate distances (30 and 40 mm). It is observed that in order to obtain good quality in the photoluminescence of the films, associated with oxygen stoichiometry, it is needed to maximize the time during which the plasma remains in contact with the growing film (plasma residence time), which is achieved by selecting suitable combinations of oxygen pressures and target to substrate distances. It is also discussed that for the growth parameters used, the higher probability for ZnO films growth results from the oxidation of Zn deposited on the substrate and such process takes place during the time that the plasma is in contact with the substrate. Moreover, it is observed that maximizing the plasma residence time over the growing film reduces the rate of material deposition, favouring the surface diffusion of adatoms, which favours both Zn–O reaction and grain growth.

  3. Structural and optical properties of electrodeposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Laurent, K. [Laboratoire de Physique des Materiaux Divises et Interfaces (LPMDI), CNRS-UMR 8108, Universite Paris-Est, 5 Bd. Descartes, 77454 Marne la Vallee Cedex 2 (France); Wang, B.Q.; Yu, D.P. [School of Physics, Electron Microscopy Laboratory, and State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871 (China); Leprince-Wang, Y. [Laboratoire de Physique des Materiaux Divises et Interfaces (LPMDI), CNRS-UMR 8108, Universite Paris-Est, 5 Bd. Descartes, 77454 Marne la Vallee Cedex 2 (France)], E-mail: yamin.leprince@univ-mlv.fr

    2008-11-28

    Zinc oxide thin films were electrodeposited on different substrates. Electrodeposition was performed with hydrogen peroxide, as hydroxide ions source, at - 1.5 V versus mercurial sulfate electrode during one hour, and a temperature maintained at 70 deg. C . The resulting thin films have a good crystallinity and a high c-axis orientation, and the unit cell parameters determined by X-ray diffraction experiment are a = 0.326 nm and c = 0.523 nm, respectively. Microstructure studies using scanning electron microscopy and atomic force microscopy show a good homogeneity of the film and a roughness around 22 nm. Optical properties were studied with Raman spectroscopy and photoluminescence spectroscopy. Optical properties of the films revealed a low defect emission in photoluminescence spectra. The E{sub 2} vibration mode for ZnO was observed near 439 cm{sup -1}, indicating that the as-deposited films were under compressive stress. Oscillations were observed in the photoluminescence spectra, from which the refractive index of ZnO thin films was extracted, that is {approx} 1.90.

  4. Effect of Nano ZnO on the Optical Properties of Poly(vinyl chloride) Films

    OpenAIRE

    Wasan Al-Taa’y; Mohammed Abdul Nabi; Yusop, Rahimi M.; Emad Yousif; Bashar Mudhaffar Abdullah; Jumat Salimon; Nadia Salih; Saiful Irwan Zubairi

    2014-01-01

    Optical properties of pure and doped poly(vinyl chloride) (PVC) films, prepared by using casting technique, with different nanosize zinc oxide (ZnO) concentrations (1–20) wt% have been studied. Parameters such as extinction coefficient, refractive index, real and imaginary parts, Urbach energy, optical conductivity, infinitely high frequency dielectric constant, and average refractive index were studied by using the absorbance and transmittance measurement from computerized UV-visible spectro...

  5. Fabrication of Mg-doped ZnO thin films by laser ablation of Zn:Mg target

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Tae Hyun; Park, Jin Jae; Nam, Sang Hwan; Park, Hye Sun; Cheong, Nu Ri [Department of Chemistry, Kyunghee University, Seoul 130-701 (Korea, Republic of); Song, Jae Kyu [Department of Chemistry, Kyunghee University, Seoul 130-701 (Korea, Republic of)], E-mail: jaeksong@khu.ac.kr; Park, Seung Min [Department of Chemistry, Kyunghee University, Seoul 130-701 (Korea, Republic of)], E-mail: smpark@khu.ac.kr

    2009-03-01

    Mg-doped ZnO thin films were fabricated by laser ablation of Zn:Mg targets consisting of Mg metallic strips and Zn disk in oxygen atmosphere with a goal to facilitate convenient control of Mg contents in the films. The characteristics of the deposited films were examined by analyzing their photoluminescence (PL), X-ray diffraction and X-ray photoelectron spectroscopy (XPS) spectra. Mg contents as analyzed by XPS indicate that the target composition is fairly transferred to the deposited films. The wurtzite structure of ZnO was conserved even for the highly doped ZnO films and there was no Mg- or MgO-related XRD peaks. With increase in the Mg content, the bandgap and PL peak energy shifted to blue and the Stokes shift became larger.

  6. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  7. Fabrication of ZnO nanoparticles-embedded hydrogenated diamond-like carbon films by electrochemical deposition technique

    Institute of Scientific and Technical Information of China (English)

    Zhang Pei-Zeng; Li Rui-Shan; Pan Xiao-Jun; Xie Er-Qing

    2013-01-01

    ZnO nanoparticles-embedded hydrogenated diamond-like carbon (ZnO-DLC) films have been prepared by electrochemical deposition in ambient conditions.The morphology,composition,and microstructure of the films have been investigated.The results show that the resultant films are hydrogenated diamond-like carbon films embedded with ZnO nanoparticles in wurtzite structure,and the content and size of the ZnO nanoparticles increase with increasing deposition voltage,which are confirmed by X-ray photoelectron spectroscopy (XPS),Raman,and transmission electron microscope (TEM).Furthermore,a possible mechanism used to describe the growth process of ZnO-DLC films by electrochemical deposition is also discussed.

  8. Growth of n-type ZnO thin films by using mixture gas of hydrogen and argon

    Institute of Scientific and Technical Information of China (English)

    Zhou Xin; Wang Shi-Qi; Lian Gui-Jun; Xiong Guang-Cheng

    2006-01-01

    High-quality oxide semiconductor ZnO thin films were prepared on single-crystal sapphire and LaAlO3 substrates by pulsed laser deposition (PLD) in the mixture gas of hydrogen and argon. Low resistivity n-type ZnO thin films with smoother surface were achieved by deposition at 600℃ in 1Pa of the mixture gas. In addition, ferromagnetism was observed in Co-doped ZnO thin films and rectification Ⅰ-Ⅴ curves were found in p-GaN/n-ZnO and p-CdTe/n-ZnO heterostructure junctions. The results indicated that using mixture gas of hydrogen and argon in PLD technique was a flexible method for depositing high-quality n-type oxide semiconductor films, especially for the multilayer thin film devices.

  9. Sea-Urchin-Like ZnO Nanoparticle Film for Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Wen Ma

    2015-01-01

    Full Text Available We present novel sea-urchin-like ZnO nanoparticles synthesized using a chemical solution method. Solution approaches to synthesizing ZnO nanostructures have several advantages including low growth temperatures and high potential for scaling up. We investigated the influence of reaction times on the thickness and morphology of sea-urchin-like ZnO nanoparticles, and XRD patterns show strong intensity in every direction. Dye-sensitized solar cells (DSSCs were developed using the synthesized ZnO nanostructures as photoanodes. The DSSCs comprised a fluorine-doped tin oxide (FTO glass with dense ZnO nanostructures as the working electrode, a platinized FTO glass as the counter electrode, N719-based dye, and I-/I3-liquid electrolyte. The DSSC fabricated using such nanostructures yielded a high power conversion efficiency of 1.16% with an incident photo-to-current efficiency (IPCE as high as 15.32%. Electrochemical impedance spectroscopy was applied to investigate the characteristics of DSSCs. An improvement in the electron transport in the ZnO photoanode was also observed.

  10. Characterization of ZnO Based Varistor Derived from Nano ZnO Powders and Ultrafine Dopants

    Institute of Scientific and Technical Information of China (English)

    Weizhong YANG; Dali ZHOU; Guangfu YIN; Runsheng WANG; Yun ZHANG

    2005-01-01

    Nanosized ZnO powders were prepared with a two-step precipitation method. The average size of ZnO particles was about 80 nm and their size distribution was narrow. Combining with ultrafine additive powders, ZnO base varistor was produced via an oxide mixing route. ZnO varistor derived from normal reagent grade starting materials was investigated for comparison purpose. Outstanding microstructure of the ZnO varistor derived from nanosize ZnO powders and ultrafine dopants was obtained: uniform distribution of fine ZnO grains (less than 3 microns), grain boundary and the dopant position. Higher varistor voltage (U=492 V/mm) and nonlinear coefficient (α=56.2) as well as lower leakage current (IL=1.5μA) were achieved. The better electrical properties were attributed to the uniform microstructure, which in turn led to stable and uniform potential barriers. Also this improved technique is more feasible for producing ZnO nanopowders and resulting varistor in large scales.

  11. Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films

    Science.gov (United States)

    Mughal, Asad J.; Carberry, Benjamin; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2017-03-01

    In this work, we employ a simple two-step growth technique to deposit impurity doped heteroepitaxial thin films of (0001) ZnO onto (111) MgAl2O4 spinel substrates through a combination of atomic layer deposition (ALD) and hydrothermal growth. The hydrothermal layer is doped with Al, Ga, and In through the addition of their respective nitrate salts. We evaluated the effect that varying the concentrations of these dopants has on both the structural and optical properties of these films. It was found that the epitaxial ALD layer created a ZnO}} } . out-of-plane orientation and a ZnO}} } . in-plane orientation between the film and substrate. The rocking curve line widths ranged between 0.75° and 1.80° depending on dopant concentration. The optical bandgap determined through the Tauc method was between 3.28 eV and 3.39 eV and showed a Burstein-Moss shift with increasing dopant concentration.

  12. Ethanol gas sensing properties of Al2O3-doped ZnO thick film resistors

    Indian Academy of Sciences (India)

    D R Patil; L A Patil; D P Amalnerkar

    2007-12-01

    The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ethanol vapours at 300°C. Aluminium oxide grains dispersed around ZnO grains would result into the barrier height among the grains. Upon exposure of ethanol vapours, the barrier height would decrease greatly leading to drastic increase in conductance. It is reported that the surface misfits, calcination temperature and operating temperature can affect the microstructure and gas sensing performance of the sensor. The efforts are, therefore, made to create surface misfits by doping Al2O3 into zinc oxide and to study the sensing performance. The quick response and fast recovery are the main features of this sensor. The effects of microstructure and additive concentration on the gas response, selectivity, response time and recovery time of the sensor in the presence of ethanol vapours were studied and discussed.

  13. Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films

    Science.gov (United States)

    Mughal, Asad J.; Carberry, Benjamin; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2017-01-01

    In this work, we employ a simple two-step growth technique to deposit impurity doped heteroepitaxial thin films of (0001) ZnO onto (111) MgAl2O4 spinel substrates through a combination of atomic layer deposition (ALD) and hydrothermal growth. The hydrothermal layer is doped with Al, Ga, and In through the addition of their respective nitrate salts. We evaluated the effect that varying the concentrations of these dopants has on both the structural and optical properties of these films. It was found that the epitaxial ALD layer created a ZnO}} } out-of-plane orientation and a ZnO}} } in-plane orientation between the film and substrate. The rocking curve line widths ranged between 0.75° and 1.80° depending on dopant concentration. The optical bandgap determined through the Tauc method was between 3.28 eV and 3.39 eV and showed a Burstein-Moss shift with increasing dopant concentration.

  14. Water-assisted nitrogen mediated crystallisation of ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Muydinov, R. [Technical University Berlin, Institute of Semiconducting- and High-Frequency Technologies, Einsteinufer 25, 10587 Berlin (Germany); Steigert, A. [Helmholtz-Zentrum Berlin, Institute of Heterogeneous Material Systems, Albert-Einstein-Straße 15, 12489 Berlin (Germany); Schönau, S.; Ruske, F. [Helmholtz-Zentrum Berlin, Institute of Silicon Photovoltaics, Kekuléstraße 5, 12489 Berlin (Germany); Kraehnert, R.; Eckhardt, B. [Technical University Berlin, Institute of Technical Chemistry, Straße des 17. Juni 124, 10623 Berlin (Germany); Lauermann, I. [Helmholtz-Zentrum Berlin, Institute of Heterogeneous Material Systems, Albert-Einstein-Straße 15, 12489 Berlin (Germany); Szyszka, B. [Technical University Berlin, Institute of Semiconducting- and High-Frequency Technologies, Einsteinufer 25, 10587 Berlin (Germany)

    2015-09-01

    Nitrogen mediated crystallisation (NMC) being performed in oxygen atmosphere at T ≥ 600 °C is an effective approach to obtain very well (00l)-textured ZnO films. A use of NMC-seed layers remarkably improves electrical transport properties of subsequently deposited ZnO:Al contacts. In this work, crystallisation of quasi-amorphous, nitrogen doped ZnO seed layers has been performed using water vapours at overpressure and temperatures around 100 °C. This approach allows employment of soda-lime float-glass or temperature sensitive film stacks as a substrate. We propose here possible mechanism of water-assisted NMC and grope for optimised crystallisation conditions on the basis of optical, microscopic, and textural investigation. Low temperature water-assisted crystallisation of 20 nm thick ZnO layers was compared with high temperature annealing methods in terms of composition, microstructure and crystallinity. Electrical properties such as electron Hall mobility (μ{sub e}), concentration of free electrons (N{sub e}) and sheet resistance (R{sub sh}) have been evaluated and compared for functional ZnO:Al films obtained on glass and on differently crystallised NMC-seed layers. It was found that the crystallised with water assistance at low temperature ZnO seed layers provide comparable improvement in crystallinity and electrical properties of subsequently grown functional ZnO:Al films with respect to the ones crystallised at high temperature. Use of optimised water-assisted crystallisation of seed layers has allowed decreasing R{sub sh} of thin (130–270 nm) functional ZnO:Al films twice compared to the glass substrate. Both provide this effect: increase in μ{sub e} and increase of N{sub e}. - Highlights: • Amorphous ZnO:N films can be crystallised in autoclave at temperatures around 100 °C. • Such water-assisted crystallisation provides well-crystalline ZnO seed layers. • Use of these seed layers resulted in stress-free ZnO:Al contacts with twice lower R

  15. Plasmon-exciton interaction and screening of exciton in ZnO-based thin film on bulk Pt as analyzed by spectroscopic ellipsometry

    Science.gov (United States)

    Darma, Yudi; Dimas Satrya, Christoforus; Marlina, Resti; Kurniawan, Robi; Herng, Tun Seng; Ding, Jun; Rusydi, Andrivo

    2017-01-01

    We study plasmon-exciton interaction in ZnO-based thin film on bulk Pt by using high resolution spectroscopic ellipsometry. ZnO films on quartz are used as reference. This study shows the strong electronic interactions between ZnO film and Pt by considering the significant suppression of exciton in ZnO film, in comparison to ZnO film on quartz. We found that plasmon in Pt are responsible to provide transferred electron for electronic blocking of exciton in ZnO film induce by spontaneous recombination from Pt. In the case of Cu doped ZnO film, we confirm screening effects on exciton and a localized interband transition for both systems (ZnO film on Pt and ZnO film on quartz). In Cu-doped ZnO film, electronic blocking of exciton by Pt plasmon is more pronounce rather than screening effect by interband transition. Our results show the importance of plasmon from substrate and doping to modify the optical properties of wide bandgap semiconductor.

  16. Tailoring Energy Bandgap of Al Doped ZnO Thin Films Grown by Vacuum Thermal Evaporation Method.

    Science.gov (United States)

    Vyas, Sumit; Singh, Shaivalini; Chakrabarti, P

    2015-12-01

    The paper presents the results of our experimental investigation pertaining to tailoring of energy bandgap and other associated characteristics of undoped and Al doped ZnO (AZO) thin film by varying the atomic concentration of Al in ZnO. Thin films of ZnO and ZnO doped with Al (1, 3, and 5 atomic percent (at.%)) were deposited on silicon substrate for structural characterization and on glass substrate for optical characterization. The dependence of structural and optical properties of Al doped ZnO on the atomic concentration of Al added to ZnO has been reported. On the basis of the experimental results an empirical formula has been proposed to calculate the energy bandgap of AZO theoretically in the range of 1 to 5 at.% of Al. The study revealed that AZO films are composed of smaller and larger number of grains as compared to pure ZnO counterpart and density of the grains was found to increase as the Al concentration increased (from 1 to 5 at.%). The transmittance in the visible region was greater than 90% and found to increase with increasing Al concentration up to 5 at.%. The optical bandgap was found to increase initially with increase in atomic concentration of Al concentration up to 3 at.% and decrease thereafter with increasing concentration of Al.

  17. Epitaxial electrodeposition of ZnO thin film on GaN(0001) bulk single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Ichinose, Keigo; Yoshida, Tsukasa [Center of Innovative Photovoltaic Systems (CIPS), Environmental and Renewable Energy Systems (ERES) Division, Graduate School of Engineering, Gifu University (Japan)

    2008-10-15

    Ga terminated surface of heavily doped conductive GaN(0001) bulk single crystal was used as a rotating disk electrode (RDE) to electrodeposit ZnO thin film employing reduction of O{sub 2}. Although the native surface was rather inactive for the reduction of O{sub 2}, it was activated by dipping in HCl and further by prolonged electrolysis to reduce O{sub 2} in a Zn{sup 2+} free solution. Koutecky-Levich analysis revealed important kinetic constants, such as the standard charge transfer rate constant (k{sup 0}) of 2.4 x 10{sup -14} cm s{sup -1} and the transfer coefficient ({alpha}) of 0.11 at 70 C for the reduction of O{sub 2} at the most activated GaN(0001). Electrodeposition of ZnO from the bath containing ZnCl{sub 2} lead to an epitaxial growth of ZnO in a ZnO[100] parallel GaN[100] alignment as confirmed from the XRD {omega} scan with {theta} adjusted to ZnO(10 anti 12). The higher level of epitaxy was achieved for the more active surfaces of GaN as estimated from narrowing of the full width at half maximum (fwhm) of the peaks in the XRD {omega} -scan. Such films were also fully covering the surface of GaN as found in the SEM observation. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Structure and thermoelectric properties of Al-doped ZnO films prepared by thermal oxidization under high magnetic field

    Science.gov (United States)

    Liu, Shiying; Peng, Sunjuan; Ma, Jun; Li, Guojian; Qin, Xuesi; Li, Mengmeng; Wang, Qiang

    2017-04-01

    This paper studies the effects of high magnetic field (HMF) on the structure, optical and thermoelectric properties of the doped ZnO thin films. The results show that both Al dopant and application of HMF can affect the crystal structure, surface morphology, elemental distribution and so on. The particles of the thin films become small and regular by doping Al. The ZnO films oxidized from the Au/Zn bilayer have needle structure. The ZnO films oxidized from the Au/Zn-Al bilayer transform to spherical from hexagonal due to the application of HMF. The transmittance decreases with doping Al because of the opaque of Al element and decreases with the application of HMF due to the dense structure obtained under HMF. Electrical resistivity (ρ) of the ZnO films without Al decreases with increasing measurement temperature (T) and is about 1.5 × 10-3 Ω·m at 210 °C. However, the ρ of the Al-doped ZnO films is less than 10-5 Ω·m. The Seebeck coefficient (S) of the films oxidized from the Au/Zn-Al films reduces with increasing T. The S values oxidized under 0 T and 12 T conditions are 2.439 μV/K and -3.415 μV/K at 210 °C, respectively. Power factor reaches the maximum value (3.198 × 10-4 W/m·K2) at 210 °C for the film oxidized under 12 T condition. These results indicate that the Al dopant and the application of HMF can be used to control structure and thermoelectric properties of doped ZnO films.

  19. Annealing temperature dependence of the structures and properties of Co-implanted ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Bin; Tang, Kun; Gu, Shulin, E-mail: slgu@nju.edu.cn; Ye, Jiandong, E-mail: yejd@nju.edu.cn; Huang, Shimin; Gu, Ran; Zhang, Yang; Yao, Zhengrong; Zhu, Shunming; Zheng, Youdou

    2014-09-15

    Highlights: • To avoid the forming of Co clusters and explore the origin of the magnetism, detailed investigation on the properties of the Co-implanted ZnO films with a rather low dose of 8 × 10{sup 15} cm{sup −2} and high implantation energy of 1 MeV were carried out. • The crystalline structure of the damaged region caused by ion-implantation has been recovered via the thermal annealing treatment at the temperature of 900 °C and above. • The low temperature magnetic hysteresis loops have indicated paramagnetism for the annealed films with weak ferromagnetic characteristics. • The zero-field cooling (ZFC) magnetization curves of the Co-implanted ZnO samples have varied from concave shape to convex one as the annealing temperature increased from 750 °C to 1000 °C. - Abstract: The effects of thermal annealing treatment on the structural, electrical, optical and magnetic properties of Co-implanted ZnO (0 0 0 1) films have been investigated in detail. The crystalline structure of the damaged region caused by ion implantation has been recovered via the thermal annealing at the temperature of 900 °C and above, and no Co clusters or its related oxide phases have been observed. The electrical and optical properties of the annealed films have shown strong dependence on the annealing temperature. The zero field cooling magnetization curves of the annealed films have varied from concave shape to convex one as the annealing temperature increased from 750 °C to 1000 °C, which are possibly tuned by the changes of the ratio of the itinerant carriers over the localized spin density. The low temperature magnetic hysteresis loops have indicated paramagnetic behavior for the annealed films with weak ferromagnetic characteristics. The ferromagnetism is attributed to the substituted Co{sup 2+} ions and vacancy defects, while the paramagnetism could be induced by ionized interstitial Zn defects.

  20. Reflectometric measurement of n-hexane adsorption on ZnO2 nanohybrid film modified by hydrophobic gold nanoparticles

    Science.gov (United States)

    Sebők, Dániel; Csapó, Edit; Ábrahám, Nóra; Dékány, Imre

    2015-04-01

    Zinc-peroxide/poly(styrenesulfonate) nanohybrid thin films (containing 20 bilayers: [ZnO2/PSS]20, d ∼ 500 nm) were prepared using layer-by-layer (LbL) method. The thin film surface was functionalized by different surface modifying agents (silanes, alkylthiols and hydrophobized nanoparticles). Based on the experimental results of quartz crystal microbalance (QCM) and contact angle measurements (as prequalifications) the octanethiol covered gold nanoparticles (OT-AuNPs) were selected for further vapour adsorption studies. Reflectometric interference spectroscopy (RIfS) was used to measure n-hexane vapour adsorption on the original and modified nanohybrid films in a gas flow platform. The thin film provides only the principle of the measurement (by interference phenomenon), the selectivity and hydrophobicity is controlled and enhanced by surface functionalization (by dispersion interaction between the alkyl chains). The interference pattern shift (Δλ) caused by the increase of the optical thickness of the thin film due to vapour adsorption was investigated. It was found that due to the surface functionalization by hydrophobic nanoparticles the effect of water vapour adsorption decreased significantly, while for n-hexane opposite tendency was observed (the effective refractive index and thus the interference pattern shift increased drastically). The correlation between QCM technique and optical method (RIfS) was specified: linear specific adsorbed amount vs. wavelength shift calibration curves were determined in the pr = 0-0.4 relative vapour pressure range. The thin film is suitable for sensorial application (e.g. volatile organic compound/VOC sensor).

  1. Development of Solution-Processed ZnO Nanorod Arrays Based Photodetectors and the Improvement of UV Photoresponse via AZO Seed Layers.

    Science.gov (United States)

    Zhang, Yuzhu; Xu, Jianping; Shi, Shaobo; Gao, Yanyan; Wang, Chang; Zhang, Xiaosong; Yin, Shougen; Li, Lan

    2016-08-31

    Designing a rational structure and developing an efficient fabrication technique for bottom-up devices offer a promising opportunity for achieving high-performance devices. In this work, we studied how Al-doped ZnO (AZO) seed layer films influence the morphology and optical and electrical properties for ZnO aligned nanorod arrays (NRs) and then the performance of ZnO NRs based ultraviolet photodetectors (UV PDs) with Au/ZnO NRs Schottky junctions and p-CuSCN/n-ZnO NRs heterojunctions. The PD with AZO thin film with 0.5 at. % Al doping (named as AZO (0.5%)) exhibited more excellent photoresponse properties than that with pristine ZnO and AZO (1%) thin films. This phenomenon can be ascribed to the good light transmission of the AZO layer, increased density of the NRs, and improved crystallinity of ZnO NRs. The PDs based on CuSCN/ZnO NRs heterojunctions showed good rectification characteristics in the dark and self-powered UV photoresponse properties with excellent stability and reproducibility under low-intensity illumination conditions. A large responsivity located at 365 nm of 22.5 mA/W was achieved for the PD with AZO (0.5%) thin film without applied bias. The internal electric field originated from p-CuSCN/n-ZnO NRs heterojunctions can separate photogenerated carriers in ZnO NRs and drift toward the corresponding electrode.

  2. Preparation,characterization and infrared emissivity study of Ce-doped ZnO films

    Institute of Scientific and Technical Information of China (English)

    杜芳黎; 王宁; 张冬梅; 沈应中

    2010-01-01

    Ce-doped ZnO films were prepared by the sol-gel method with spin coating onto glass substrates.Zinc acetate dihydrate,ethanol,diethanolamine and cerium nitrate hexahydrate were used as starting material,solvent,stabilizer and dopant source,respectively.Structure and microstructure of the films were characterized with X-ray diffraction(XRD),field emission-scanning electron microscopy(FE-SEM) and the energy dispersive X-ray spectrometry(EDS).The infrared properties were also investigated.It was found that Ce-...

  3. Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2015-01-07

    Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (

  4. Effect of In-doping on the Optical Constants of ZnO Thin Films

    Science.gov (United States)

    Xie, G. C.; Fanga, L.; Peng, L. P.; Liu, G. B.; Ruan, H. B.; Wu, F.; Kong, C. Y.

    Highly transparent and conductive Indium-doped ZnO (ZnO:In) thin films with different In content were deposited on quartz glass slides by RF magnetron sputtering at room temperature. The thickness and the optical constants of the films were obtained by the Swanepoel method, and the effects of In concentration on the optical constants were investigated. Calculated results show that both the refractive index and optical band gap first increase then decreases with In concentration increasing in the visible region, and the variation of both ɛr and ɛi with wavelength follows the same trend as that of refractive index and extinction coefficient, respectively.

  5. Effect of doping concentration on the conductivity and optical properties of p-type ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pathak, Trilok Kumar [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Kumar, Vinod, E-mail: vinod.phy@gmail.com [Department of Physics, University of the Free State, Bloemfontein (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, Bloemfontein (South Africa); Purohit, L.P., E-mail: proflppurohitphys@gmail.com [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India)

    2016-01-01

    Nitrogen doped ZnO (NZO) thin films were synthesized on glass substrates by the sol–gel and spin coating method. Zinc acetate dihydrates and ammonium acetate were used as precursors for zinc and nitrogen, respectively. X-ray diffraction study showed that the thin films have a hexagonal wurtzite structure corresponding (002) peak for undoped and doped ZnO thin films. The transmittance of the films was above 80% and the band gap of the film varies from 3.21±0.03 eV for undoped and doped ZnO. The minimum resistivity of NZO thin films was obtained as 0.473 Ω cm for the 4 at% of nitrogen (N) doping with a mobility of 1.995 cm{sup 2}/V s. The NZO thin films showed p-type conductivity at 2 and 3 at% of N doping. The AC conductivity measurements that were carried out in the frequency range 10 kHz to 0.1 MHz showed localized conduction in the NZO thin films. These highly transparent ZnO films can be used as a possible window layer in solar cells.

  6. ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

    Directory of Open Access Journals (Sweden)

    Javed Iqbal

    2016-10-01

    Full Text Available Nanostructured ZnO thin films with high transparency have been grown on glass substrate by atomic layer deposition at various temperatures ranging from 100 °C to 300 °C. Efforts have been made to observe the effect of substrate temperature on the thickness of the deposited thin films and its consequences on the energy band gap. A remarkably high growth rate of 0.56 nm per cycle at a substrate temperature of 200 °C for ZnO thin films have been achieved. This is the maximum growth rate for ALD deposited ZnO thin films ever reported so far to the best of our knowledge. The studies of field emission scanning electron microscopy and X-ray diffractometry patterns confirm the deposition of uniform and high quality nanosturtured ZnO thin films which have a polycrystalline nature with preferential orientation along (100 plane. The thickness of the films deposited at different substrate temperatures was measured by ellipsometry and surface profiling system while the UV–visible and photoluminescence spectroscopy studies have been used to evaluate the optical properties of the respective thin films. It has been observed that the thickness of the thin film depends on the substrate temperatures which ultimately affect the optical and structural parameters of the thin films.

  7. High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation.

    Science.gov (United States)

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2016-12-01

    Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μ H) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 × 10(20) cm(-3). Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm(2)/Vs with an N of 2.22 × 10(20) cm(-3).

  8. Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell

    Directory of Open Access Journals (Sweden)

    Mi-jin Jin

    2013-10-01

    Full Text Available We studied the tuning of structural and optical properties of ZnO thin film and its correlation to the efficiency of inverted solar cell using plasma-enhanced atomic layer deposition (PEALD. The sequential injection of DEZn and O2 plasma was employed for the plasma-enhanced atomic layer deposition of ZnO thin film. As the growth temperature of ZnO film was increased from 100 °C to 300 °C, the crystallinity of ZnO film was improved from amorphous to highly ordered (002 direction ploy-crystal due to self crystallization. Increasing oxygen plasma time in PEALD process also introduces growing of hexagonal wurtzite phase of ZnO nanocrystal. Excess of oxygen plasma time induces enhanced deep level emission band (500 ∼ 700 nm in photoluminescence due to Zn vacancies and other defects. The evolution of structural and optical properties of PEALD ZnO films also involves in change of electrical conductivity by 3 orders of magnitude. The highly tunable PEALD ZnO thin films were employed as the electron conductive layers in inverted polymer solar cells. Our study indicates that both structural and optical properties rather than electrical conductivities of ZnO films play more important role for the effective charge collection in photovoltaic device operation. The ability to tune the materials properties of undoped ZnO films via PEALD should extend their functionality over the wide range of advanced electronic applications.

  9. Structural and Magnetic Properties of Mn doped ZnO Thin Film Deposited by Pulsed Laser Deposition

    KAUST Repository

    Baras, Abdulaziz

    2011-07-01

    Diluted magnetic oxide (DMO) research is a growing field of interdisciplinary study like spintronic devices and medical imaging. A definite agreement among researchers concerning the origin of ferromagnetism in DMO has yet to be reached. This thesis presents a study on the structural and magnetic properties of DMO thin films. It attempts to contribute to the understanding of ferromagnetism (FM) origin in DMO. Pure ZnO and Mn doped ZnO thin films have been deposited by pulsed laser deposition (PLD) using different deposition conditions. This was conducted in order to correlate the change between structural and magnetic properties. Structural properties of the films were characterized using x-ray diffraction (XRD) and scanning electron microscopy (SEM). The superconducting quantum interference device (SQUID) was used to investigate the magnetic properties of these films. The structural characterizations showed that the quality of pure ZnO and Mn doped ZnO films increased as oxygen pressure (PO) increased during deposition. All samples were insulators. In Mn doped films, Mn concentration decreased as PO increased. The Mn doped ZnO samples were deposited at 600˚C and oxygen pressure from 50-500mTorr. All Mn doped films displayed room temperature ferromagnetism (RTFM). However, at 5 K a superparamagnetic (SPM) behavior was observed in these samples. This result was accounted for by the supposition that there were secondary phase(s) causing the superparamagnetic behavior. Our findings hope to strengthen existing research on DMO origins and suggest that secondary phases are the core components that suppress the ferromagnetism. Although RTFM and SPM at low temperature has been observed in other systems (e.g., Co doped ZnO), we are the first to report this behavior in Mn doped ZnO. Future research might extend the characterization and exploration of ferromagnetism in this system.

  10. Characterization of dilute magnetic semiconducting transition metal doped ZnO thin films by sol–gel spin coating method

    Energy Technology Data Exchange (ETDEWEB)

    Vijayaprasath, G.; Murugan, R. [Department of Physics, Alagappa University, Karaikudi 630004, Tamil Nadu (India); Ravi, G., E-mail: gravicrc@gmail.com [Department of Physics, Alagappa University, Karaikudi 630004, Tamil Nadu (India); Mahalingam, T. [Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749 (Korea, Republic of); Hayakawa, Y. [Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 (Japan)

    2014-09-15

    Graphical abstract: - Highlights: • Diluted magnetic semiconducting TM (Ni, Mn, Co) doped ZnO thin films were fabricated by sol–gel spin coating technique. • The XRD analyses revealed that the TM (Ni, Mn, Co) doped ZnO films have hexagonal wurtzite structure. • Photoluminescence and micro-Raman spectra were interpreted for TM (Ni, Mn, Co) doped ZnO thin films. • SEM morphology studies were made for Zn{sub 0.97} Ni{sub 0.03}O, Zn{sub 0.97} Mn{sub 0.03}O and Zn{sub 0.97} Co{sub 0.03}O thin films. • Room temperature ferromagnetism was observed in TM (Ni, Mn, Co) doped ZnO thin films. - Abstract: Pure and transition metal (TM = Ni, Mn, Co) doped zinc oxide (ZnO) thin films were prepared by sol–gel spin coating method with a concentration of 0.03 mol% of transition metals. X-ray diffraction studies revealed the polycrystalline nature of the films with the presence of hexagonal wurtzite structure. UV transmittance spectra showed that all the films are highly transparent in the visible region and in the case of doped ZnO thin films, d–d transition was observed in the violet region due to the existence of crystalline defects and grain boundaries. The optical band gap of the films decreases with increasing orbital occupation numbers of 3d electrons due to the orbital splitting of magnetic ions. Ultraviolet and near-infrared electronic transitions were observed which reveals a strong relationship with the doping of transition metal into ZnO site. The observed luminescence in the green, violet and red regions strongly depends on the doping elements owing to the different oxygen vacancy, oxygen interstitial, and surface morphology. The surface morphology of thin films was investigated by scanning electron microscope (SEM). The energy dispersive X-ray analysis (EDX) confirmed the stoichiometric composition of the TM doped ZnO thin films. Magnetic measurements at room temperature exhibited well defined ferromagnetic features of the thin films.

  11. Polycrystalline ZnO Films Deposited on Glass by RF Reactive Sputtering

    Institute of Scientific and Technical Information of China (English)

    GONG Heng-xiang; HE Yun-yao; Wang Qi-feng; JIN Guo-juan; FANG Ze-bo; WANG Yin-yue

    2004-01-01

    Polycrystalline ZnO films were prepared on glass wafer using Zn targets by radio frequency(RF)reactive sputtering technique under different deposition conditions.X-ray diffraction (XRD) and optical transmittance spectrum were employed to analyze the structure and optical character of the films.The strain and stress in films, as well as the packing density are calculated in terms of refractive index of films measured with an elliptic polarization analyzer.It is the deposition conditions that have great effects on the structural and optical properties of ZnO films.Under the optimal conditions,the only evident peak in XRD spectrum was (002) peak with the full width at half maximum (FWHM) of 0.20° showing the grain size of 42.8 nm.The packing density,the stress in (002) plane and the average optical transmittance in the visible region were about 97%,-1.06×109 N/m2 and 92%, respectively.

  12. Mixing ALD/MLD-grown ZnO and Zn-4-aminophenol layers into various thin-film structures.

    Science.gov (United States)

    Sundberg, Pia; Sood, Anjali; Liu, Xuwen; Karppinen, Maarit

    2013-11-14

    Building 2D inorganic-organic hybrids by combining inorganic and organic constituents with molecular-layer precision is an attractive approach to fabricate novel materials with a tailored combination of properties from both entities. Here we demonstrate the potential of the combined atomic and molecular layer deposition (ALD/MLD) technique for the state-of-the-art synthesis of such materials and to fabricate both homogeneous thin-film mixtures and nanolaminates of ZnO and the Zn-4-aminophenol inorganic-organic hybrid. The thin films are deposited by varying the number of precursor cycles during the depositions. Diethyl zinc and 4-aminophenol (AP) are used as precursors for the Zn-AP hybrid depositions, and diethyl zinc and water for the ZnO depositions. The characterization of the mixed Zn-AP and ZnO films reveals that crystallinity, density, surface roughness, chemical stability, hardness and contact modulus are sensitively altered by even a minor insertion of Zn-AP hybrid into the ZnO structure. Fabrication of Zn-AP + ZnO nanolaminates with different thicknesses of the Zn-AP and ZnO layers provides us with an even better way to control the hardness and contact modulus, and also to enhance the chemical stability of the films.

  13. Synthesis and characterization of thermally oxidized ZnO films

    Indian Academy of Sciences (India)

    A P Rambu; N Iftimie

    2014-05-01

    Metallic zinc thin films were deposited onto glass substrates using vacuum thermal evaporation method. By thermal oxidation of as-deposited Zn films, in ambient conditions, at different temperatures (570, 670 and 770 K, respectively, for 1 h) zinc oxide thin films were obtained. The structural characteristics of the obtained films were investigated by X-ray diffraction technique and atomic force microscopy. Characteristic XRD patterns of oxidized films show small and narrow peaks superimposed on the large broad background of the amorphous component of the substrate. Optical transmittance spectra were recorded and it was observed that the transmittances of the studied films increased with increasing oxidation temperature. The values of the optical bandgap, g, evaluated from Tauc plots, were found to be ranged between 3.22 and 3.27 eV. Electrical conductivity measurements were performed and it was observed that, after performing a heat treatment, the electrical conductivity of analysed samples decreased with one or two orders of magnitude. The gas sensitivity was investigated for some reducing gases such as acetone, methane and liquefied petroleum gas and it was observed that the films studied were selective to acetone.

  14. Synthesis, characterization, and hydrogen gas sensing properties of AuNs-catalyzed ZnO sputtered thin films

    Science.gov (United States)

    Drmosh, Q. A.; Yamani, Z. H.

    2016-07-01

    Hydrogen present in concentration up to 4 vol.% forms an explosive mixture with air. Its propensity to escape in the event of leak, could lead to quick build-up and formation of an explosive mixture with air in confined spaces, such as an automobile. This necessitates its detection at very low concentration. Zinc oxide (ZnO) is a well-known wide band gap (∼3.37 eV) semiconducting oxide that has been widely used for gas sensing applications. This work reports on the fabrication, characterization and gas sensing performance of nanogold decorated ZnO thin films made by DC reactive sputtering. The sensor films were fabricated by depositing a very thin layer of gold on the sputtered ZnO thin film. The as deposited Au@ZnO films were converted into highly crystalline ZnO film covered with gold nanostructures (AuNs@ZnO) by mild heat treatment. The structural and morphological as well as the compositional homogeneity of the as-deposited and heat-treated ZnO, Au@ZnO and AuNs@ZnO thin films were ascertained. The gas sensing behavior of the AuNs@ZnO thin films towards hydrogen as a function of temperature at different H2 concentrations was investigated and compared with that of pure and heat-treated ZnO films. The effect of the presence of gold nanoparticles on imparting improvement (in terms of higher response signal, high reproducibility and complete reversibility) was established; the optimal operating temperature was about 400 °C. A plausible mechanism for the observed enhancement in the sensing behavior of AuNs@ZnO films towards H2 is proposed.

  15. Optical constants and near infrared emission of Er doped ZnO sol–gel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vettumperumal, R. [P.G. and Research Department of Physics, Sri Paramakalyani College, Alwarkurichi 627412, Tamil Nadu (India); Kalyanaraman, S., E-mail: mayura_priya2003@yahoo.co.in [P.G. and Research Department of Physics, Sri Paramakalyani College, Alwarkurichi 627412, Tamil Nadu (India); Thangavel, R., E-mail: rtvel_au@yahoo.co.in [Department of Applied Physics, Indian School of Mines, Dhanbad (India)

    2015-02-15

    Erbium (Er) doped zinc oxide (ZnO) sol–gel thin films were deposited on glass substrate using the spin coating method. The effect of erbium concentration and annealing temperature on structural and optical properties was studied. The annealed film was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive X-ray spectrum (EDX), micro-Raman, photoluminescence (PL) and UV–vis spectroscopy. All the films showed a wurtzite structure of polycrystalline nature with an average crystal size of 27.44 nm at 500 °C and 29.28 nm at 600 °C. The Raman spectra confirmed the absence of secondary phases in the Er doped ZnO films and the longitudinal optical phonon mode was upto the fifth order. Densely packed surfaces of the films were observed from SEM images. The presence and distribution of Zn, O and Er elements in the deposited films were confirmed by EDX analysis. The calculated value of exciton binding energy of ZnO film was 60 meV with a maximum value of 72 meV being observed for Er doped films. The near infra-red emission peak was observed at 1.63 eV through PL spectra studies. The average transmission was 80% with the calculated value of optical band gap being 3.26–3.32 eV. An increase in the refractive index value predicts the substitutional incorporation of Er ions in ZnO with the maximum optical conductivity being observed in the UV region. - Highlights: • Higher exciton binding energy in the doped ZnO films. • Near infrared emission is observed and better than ZnO. • Refractive index is calculated by theoretical and experimental means. • Maximum optical conductivity in the UV region.

  16. Significant mobility enhancement in extremely thin highly doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Look, David C., E-mail: david.look@wright.edu [Semiconductor Research Center, Wright State University, 3640 Colonel Glenn Hwy., Dayton, Ohio 45435 (United States); Wyle Laboratories, Inc., 2601 Mission Point Blvd., Dayton, Ohio 45431 (United States); Air Force Research Laboratory Sensors Directorate, 2241 Avionics Circle, Wright-Patterson AFB, Ohio 45433 (United States); Heller, Eric R. [Air Force Research Laboratory Materials and Manufacturing Directorate, 3005 Hobson Way, Wright-Patterson AFB, Ohio 45433 (United States); Yao, Yu-Feng; Yang, C. C., E-mail: ccycc@ntu.edu.tw [Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan (China)

    2015-04-13

    Highly Ga-doped ZnO (GZO) films of thicknesses d = 5, 25, 50, and 300 nm, grown on 160-nm ZnO buffer layers by molecular beam epitaxy, had 294-K Hall-effect mobilities μ{sub H} of 64.1, 43.4, 37.0, and 34.2 cm{sup 2}/V-s, respectively. This extremely unusual ordering of μ{sub H} vs d is explained by the existence of a very high-mobility Debye tail in the ZnO, arising from the large Fermi-level mismatch between the GZO and the ZnO. Scattering theory in conjunction with Poisson analysis predicts a Debye-tail mobility of 206 cm{sup 2}/V-s at the interface (z = d), falling to 58 cm{sup 2}/V-s at z = d + 2 nm. Excellent fits to μ{sub H} vs d and sheet concentration n{sub s} vs d are obtained with no adjustable parameters.

  17. Optical modeling of plasma-deposited ZnO films: Electron scattering at different length scales

    Energy Technology Data Exchange (ETDEWEB)

    Knoops, Harm C. M., E-mail: H.C.M.Knoops@tue.nl; Loo, Bas W. H. van de; Smit, Sjoerd; Ponomarev, Mikhail V.; Weber, Jan-Willem; Sharma, Kashish [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Kessels, Wilhelmus M. M.; Creatore, Mariadriana, E-mail: M.Creatore@tue.nl [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands and Solliance, High Tech Campus 5, 5656 AE Eindhoven (Netherlands)

    2015-03-15

    In this work, an optical modeling study on electron scattering mechanisms in plasma-deposited ZnO layers is presented. Because various applications of ZnO films pose a limit on the electron carrier density due to its effect on the film transmittance, higher electron mobility values are generally preferred instead. Hence, insights into the electron scattering contributions affecting the carrier mobility are required. In optical models, the Drude oscillator is adopted to represent the free-electron contribution and the obtained optical mobility can be then correlated with the macroscopic material properties. However, the influence of scattering phenomena on the optical mobility depends on the considered range of photon energy. For example, the grain-boundary scattering is generally not probed by means of optical measurements and the ionized-impurity scattering contribution decreases toward higher photon energies. To understand this frequency dependence and quantify contributions from different scattering phenomena to the mobility, several case studies were analyzed in this work by means of spectroscopic ellipsometry and Fourier transform infrared (IR) spectroscopy. The obtained electrical parameters were compared to the results inferred by Hall measurements. For intrinsic ZnO (i-ZnO), the in-grain mobility was obtained by fitting reflection data with a normal Drude model in the IR range. For Al-doped ZnO (Al:ZnO), besides a normal Drude fit in the IR range, an Extended Drude fit in the UV-vis range could be used to obtain the in-grain mobility. Scattering mechanisms for a thickness series of Al:ZnO films were discerned using the more intuitive parameter “scattering frequency” instead of the parameter “mobility”. The interaction distance concept was introduced to give a physical interpretation to the frequency dependence of the scattering frequency. This physical interpretation furthermore allows the prediction of which Drude models can be used in a specific

  18. ZnO nanotube based dye-sensitized solar cells.

    Energy Technology Data Exchange (ETDEWEB)

    Martinson, A. B. F.; Elam, J. W.; Hupp, J. T.; Pellin, M. J. (Materials Science Division); (Northwestern Univ.)

    2007-05-25

    We introduce high surface area ZnO nanotube photoanodes templated by anodic aluminum oxide for use in dye-sensitized solar cells (DSSCs). Atomic layer deposition is utilized to coat pores conformally, providing a direct path for charge collection over tens of micrometers thickness. Compared to similar ZnO-based devices, ZnO nanotube cells show exceptional photovoltage and fill factors, in addition to power efficiencies up to 1.6%. The novel fabrication technique provides a facile, metal-oxide general route to well-defined DSSC photoanodes.

  19. ZnO nanotube based dye-sensitized solar cells.

    Science.gov (United States)

    Martinson, Alex B F; Elam, Jeffrey W; Hupp, Joseph T; Pellin, Michael J

    2007-08-01

    We introduce high surface area ZnO nanotube photoanodes templated by anodic aluminum oxide for use in dye-sensitized solar cells (DSSCs). Atomic layer deposition is utilized to coat pores conformally, providing a direct path for charge collection over tens of micrometers thickness. Compared to similar ZnO-based devices, ZnO nanotube cells show exceptional photovoltage and fill factors, in addition to power efficiencies up to 1.6%. The novel fabrication technique provides a facile, metal-oxide general route to well-defined DSSC photoanodes.

  20. ZnO Nanowire-Based Corona Discharge Devices Operated Under Hundreds of Volts

    Science.gov (United States)

    Yang, Wenming; Zhu, Rong; Zong, Xianli

    2016-02-01

    Minimizing the voltage of corona discharges, especially when using nanomaterials, has been of great interest in the past decade or so. In this paper, we report a new corona discharge device by using ZnO nanowires operated in atmospheric air to realize continuous corona discharge excited by hundreds of volts. ZnO nanowires were synthesized on microelectrodes using electric-field-assisted wet chemical method, and a thin tungsten film was deposited on the microchip to enhance discharging performance. The testing results showed that the corona inception voltages were minimized greatly by using nanowires compared to conventional dischargers as a result of the local field enhancement of nanowires. The corona could be continuously generated and self-sustaining. It was proved that the law of corona inception voltage obeyed the conventional Peek's breakdown criterion. An optimal thickness of tungsten film coated over ZnO nanowires was figured out to obtain the lowest corona inception voltage. The ion concentration of the nanowire-based discharger attained 1017/m3 orders of magnitude, which is practicable for most discharging applications.

  1. ZnO Nanowire-Based Corona Discharge Devices Operated Under Hundreds of Volts.

    Science.gov (United States)

    Yang, Wenming; Zhu, Rong; Zong, Xianli

    2016-12-01

    Minimizing the voltage of corona discharges, especially when using nanomaterials, has been of great interest in the past decade or so. In this paper, we report a new corona discharge device by using ZnO nanowires operated in atmospheric air to realize continuous corona discharge excited by hundreds of volts. ZnO nanowires were synthesized on microelectrodes using electric-field-assisted wet chemical method, and a thin tungsten film was deposited on the microchip to enhance discharging performance. The testing results showed that the corona inception voltages were minimized greatly by using nanowires compared to conventional dischargers as a result of the local field enhancement of nanowires. The corona could be continuously generated and self-sustaining. It was proved that the law of corona inception voltage obeyed the conventional Peek's breakdown criterion. An optimal thickness of tungsten film coated over ZnO nanowires was figured out to obtain the lowest corona inception voltage. The ion concentration of the nanowire-based discharger attained 10(17)/m(3) orders of magnitude, which is practicable for most discharging applications.

  2. Photoelectrocatrocatalytic hydrolysis of starch by using sprayed ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    R.T.Sapkal; S.S.Shinde; K.Y.Rajpure; C.H.Bhosale

    2013-01-01

    Thin films of zinc oxide have been deposited onto glass/FTO substrates at optimized 400 ℃ by using a chemical spray pyrolysis technique.Deposited films are characterized for their structural,morphological optical and photocatalytic activity by using XRD,an SEM,a UV-vis spectrophotometer,and a PEC single-cell reactor.Films are polycrystalline and have a hexagonal (wurtzite) crystal structure with c-axis (002) orientation growth perpendicular to the substrate surface.The observed direct band gap is about 3.22 eV for typical films prepared at 400 ℃.The photocatalytic activity of starch with a ZnO photocatalyst has been studied by using a novel photoelectrocatalytic process.

  3. The electrical stability of In-doped ZnO thin films deposited by RF sputtering

    Science.gov (United States)

    Sun, Hui; Jen, Shien-Uang; Chen, Sheng-Chi; Ye, Shiau-Shiang; Wang, Xin

    2017-02-01

    The electrical stability of transparent conductive oxides is an important criterion for evaluating their performance, especially when they are employed at elevated temperatures or in long-term operation. In this work, indium-doped ZnO thin films with various doping concentrations were prepared by RF sputtering. The electrical properties, electrical thermal stability, and time stability of films with differing indium contents were investigated. The results showed that the degradation of the films’ conductivity is primarily attributable to the reduction in oxygen vacancies at high temperatures under oxygenated conditions. The aggregation of indium atoms, which cannot replace Zn3+ cations at temperatures above 200 °C, can improve the carrier concentration. Further reaction with oxygen degraded the performance of the films due to the formation of insulating oxides. Long-term analysis showed the IZO films to have quite stable electrical properties. Their conductivity remained almost unchanged after two months at room temperature under normal atmospheric conditions.

  4. The crystalline structure of copper phthalocyanine films on ZnO(1100).

    Science.gov (United States)

    Cruickshank, Amy C; Dotzler, Christian J; Din, Salahud; Heutz, Sandrine; Toney, Michael F; Ryan, Mary P

    2012-09-05

    The structure of copper phthalocyanine (CuPc) thin films (5-100 nm) deposited on single-crystal ZnO(1100) substrates by organic molecular beam deposition was determined from grazing-incidence X-ray diffraction reciprocal space maps. The crystal structure was identified as the metastable polymorph α-CuPc, but the molecular stacking was found to vary depending on the film thickness: for thin films, a herringbone arrangement was observed, whereas for films thicker than 10 nm, coexistence of both the herringbone and brickstone arrangements was found. We propose a modified structure for the herringbone phase with a larger monoclinic β angle, which leads to intrastack Cu-Cu distances closer to those in the brickstone phase. This structural basis enables an understanding of the functional properties (e.g., light absorption and charge transport) of (opto)electronic devices fabricated from CuPc/ZnO hybrid systems.

  5. Synthesis and characterization of porous structured ZnO thin film for dye sensitized solar cell applications

    Science.gov (United States)

    Marimuthu, T.; Anandhan, N.; Mummoorthi, M.; Dharuman, V.

    2016-05-01

    Zinc oxide (ZnO) and zinc oxide/eosin yellow (ZnO/EY) thin films were potentiostatically deposited onto fluorine doped tin oxide (FTO) glass substrate. Effect of eosin yellow dye on structural, morphological and optical properties was studied. X-ray diffraction patterns, micro Raman spectra and photoluminescence (PL) spectra reveal hexagonal wurtzite structure with less atomic defects in 101 plane orientation of the ZnO/EY film. Scanning electron microscopy (SEM) images show flower for ZnO and porous like structure for ZnO/EY thin film, respectively. DSSC was constructed and evaluated by measuring the current density verses voltage curve.

  6. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition.

    Science.gov (United States)

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-12-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  7. Double-beam pulsed laser deposition for the growth of Al-incorporated ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, L. [Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Circuito Exterior S/N, Ciudad Universitaria, AP 70-186, C.P. 04510 México D.F., México (Mexico); Sánchez-Aké, C., E-mail: citlali.sanchez@ccadet.unam.mx [Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Circuito Exterior S/N, Ciudad Universitaria, AP 70-186, C.P. 04510 México D.F., México (Mexico); Bizarro, M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-186, C.P. 04510 México D.F., México (Mexico)

    2014-05-01

    Pulsed laser deposition in a delayed-double beam configuration is used to incorporate in situ Al in ZnO thin films. In this configuration, two synchronized pulsed-laser beams are employed to ablate independently a ZnO and an Al target. We investigated the effects of relative time delay of plasma plumes on the composition of the films with the aim of evaluating the performance of this technique to produce doped materials. Relative delay between plumes was found to control the incorporation of Al in the film in the range from 14% to 30%. However, to produce low impurity concentration of Al-doped ZnO (with Al incorporation less than 2%) the fluence used to produce the plasmas has more influence over the film composition than the relative plume delay. The minimum incorporation of Al corresponded to a relative delay of 0 μs, due to the interaction between plumes during their expansion.

  8. Real structure of the ZnO epitaxial films on (0001) leucosapphire substrates coated by ultrathin gold layers

    Energy Technology Data Exchange (ETDEWEB)

    Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Kolymagin, A. B.; Vasilyev, A. L.; Kanevsky, V. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2016-01-15

    The real structure of ZnO films formed by magnetron sputtering on (0001) leucosapphire substrates coated by an ultrathin (less than 0.7 nm) Au buffer layer has been studied by high-resolution microscopy. It is shown that modification of the leucosapphire substrate surface by depositing ultrathin Au layers does not lead to the formation of Au clusters at the film–substrate interface but significantly improves the structural quality of ZnO epitaxial films. It is demonstrated that the simplicity and scalability of the technique used to modify the substrate surface in combination with a high (above 2 nm/s) film growth rate under magnetron sputtering make it possible to obtain high-quality (0001) ZnO epitaxial films with an area of 5–6 cm{sup 2}.

  9. Fabrication and photoelectric properties of Er3+ and Yb3+ co-doped ZnO films

    Science.gov (United States)

    Feng, Wei; Wang, Xiangfu; Meng, Lan; Yan, Xiaohong

    2016-01-01

    In this paper, the Er3+ and Yb3+ co-doped ZnO films deposited by a novel thermal decomposition method under different annealing temperature process have been reported. The effects of annealing temperature on the morphology and properties of the films are systematically studied. The resulting spectra demonstrate that the Er3+ and Yb3+ co-doped ZnO films possessed the property of up-conversion, converting IR light into visible light that can be absorbed by amorphous silicon solar cell. After all, inner photoelectric effect of the Er3+ and Yb3+ co-doped ZnO films in the amorphous as a light scattering layer are also found with an infrared 980 nm laser as excitation source.

  10. Optical and Micro-Structural Properties of ZnO Thin Films Grown on Silicon Substrate by Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    ZnO thin films were deposited on n-Si (111) at various substrate temperatures and oxygen pressures by pulsed laser deposition (PLD) using a Nd∶YAG laser with the wavelength of 1064 nm. X-ray diffraction (XRD), photoluminescence (PL), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to analyze the microstructure, optical property and morphology of the ZnO thin films. A comparatively optimal crystallized ZnO thin film was obtained at the substrate temperature of 600 ℃ in oxygen pressure of 50 mTorr. The intensity of the luminescence strongly depends on the stoichiometry of the film as well as the crystalline quality.

  11. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

    Science.gov (United States)

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-09-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  12. Photocatalytic activities of wet oxidation synthesized ZnO and ZnO-TiO2 thick porous films

    Science.gov (United States)

    Chen, Ruiqun; Han, Jie; Yan, Xiaodong; Zou, Chongwen; Bian, Jiming; Alyamani, Ahmed; Gao, Wei

    2011-05-01

    Highly porous zinc oxide (ZnO) film was produced by using reactive magnetron sputtering zinc target followed by wet oxidation. Titanium dioxide (TiO2) was mixed to the porous films by using either TiO2 target magnetron sputter deposition or sol-spin method. The film thickness could reach 50 μm with uniform porosity. On the sputtering prepared ZnO-TiO2 film surface, fine nanorods with small anatase TiO2 nano-clusters on the tips were observed by SEM and TEM, and the titanium (Ti) composition was determined by XPS as 0.37%. The sol-spin treatment could increase the Ti composition to 4.9%, with reduced pore size compared to the untreated ZnO porous film. Photoluminescence measurements showed that the Ti containing porous film has strong ultraviolet-visible light emission. In the photo-catalysis testing, ZnO and ZnO-TiO2 have similar photo-catalysis activity under 365 nm UV irradiation, but under visible light, the photocatalysis activities of ZnO-TiO2 films were twice higher than that of ZnO porous film, implying promising applications of this porous oxide composite for industrial and dairy farm wastewater treatment.

  13. Structural, electrical and optical studies on spray-deposited aluminium-doped ZnO thin film

    Indian Academy of Sciences (India)

    S Tewari; A Bhattacharjee

    2011-01-01

    Thin films of zinc oxide (ZnO) were deposited on cleaned glass substrates by chemical spray pyrolysis technique using Zn(CH3COO)2 as precursor solution. Also, aluminium-doped thin films of ZnO were prepared by using AlCl3 as doping solution for aluminium. The dopant concentration [Al/Zn atomic percentage (at%)] was varied from 0 to 1.5 at% in thin films of ZnO prepared in different depositions. Structural characterization of the deposited films was performed with X-ray diffraction (XRD) studies. It confirmed that all the films were of zinc oxide having polycrystalline nature and possessing typical hexagonal wurtzite structure with crystallite size varying between 100.7 and 268.6 nm. The films exhibited changes in relative intensities and crystallite size with changes in the doping concentration of Al. The electrical studies established that 1 at% of Aldoping was the optimum for enhancing electrical conduction in ZnO thin films and beyond that the distortion caused in the lattice lowered the conductivity. The films also exhibited distinct changes in their optical properties at different doping concentrations, including a blue shift and slight widening of bandgap with increasing Al dopant concentration.

  14. Electrical transport and Al doping efficiency in nanoscale ZnO films prepared by atomic layer deposition

    NARCIS (Netherlands)

    Wu, Y.; Hermkens, P.M.; Loo, B.W.H. van de; Knoops, H.C.M.; Potts, S.E.; Verheijen, M.A.; Roozeboom, F.; Kessels, W.M.M.

    2013-01-01

    In this work, the structural, electrical, and optical properties as well as chemical bonding state of Al-doped ZnO films deposited by atomic layer deposition have been investigated to obtain insight into the doping and electrical transport mechanisms in the films. The range in doping levels from 0%

  15. Characterization of precursor-based ZnO transport layers in inverted polymer solar cells

    NARCIS (Netherlands)

    Grossiord, N.; Bruyn, P. de; Moet, D.J.D.; Andriessen, R.; Blom, P.W.M.

    2014-01-01

    A wide range of characterization techniques are used to study spin-coated films of zinc oxide (ZnO) obtained from thermal decomposition of zinc acetylacetonate hydrate. Inverted organic solar cells with ZnO transport layers were prepared. Deposition conditions of the solution onto the substrate (e.g

  16. Properties of ZnO thin films grown at room temperature by using ionized cluster beam deposition

    CERN Document Server

    Whangbo, S W; Kim, S G; Cho, M H; Jeong, K H; Whang, C N

    2000-01-01

    ZnO films with a thickness of 120 nm were deposited on Si(100) at room temperature by using the reactive-ionized cluster beam deposition technique. The effects of the acceleration voltage (V sub a) on the properties, such as the crystallinity, the induced film strain, the surface roughness, and the electrical and the optical properties of the films, were investigated. The ZnO films had only a (002) crystalline orientation and uniformly composed through the whole thickness. As the V sub a increased, more strain was induced in the film, and the packing density caused by the structural imperfection was lowered. The films prepared under the optimum condition (V sub a = 3 kV) on a glass substrate showed good optical transmittance, and the band-gap of the film was evaluated to be 3.32 eV.

  17. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    CERN Document Server

    Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

  18. Magnetic Properties of Gadolinium-Doped ZnO Films and Nanostructures

    KAUST Repository

    Roqan, Iman S.

    2016-08-29

    The magnetic properties of Gd-doped ZnO films and nanostructures are important to the development of next-generation spintronic devices. Here, we elucidate the significant role played by Gd-oxygen-deficiency defects in mediating/inducing ferromagnetic coupling in in situ Gd-doped ZnO thin films deposited at low oxygen pressure by pulsed laser deposition (PLD). Samples deposited at higher oxygen pressures exhibited diamagnetic responses. Vacuum annealing was used on these diamagnetic samples (grown at a relatively high oxygen pressures) to create oxygen- deficiency defects with the aim of demonstrating reproducibility of room-temperature ferromagnetism (RTFM). Samples annealed at oxygen environment exhibited super‐ paramagnetism and blocking-temperature effects. The samples possessed secondary phases; Gd segregation led to superparamagnetism. Theoretical studies showed a shift of the 4f level of Gd to the conduction band minimum (CBM) in Gd-doped ZnO nanowires, which led to an overlap with the Fermi level, resulting in strong exchange coupling and consequently RTFM.

  19. Photoluminescence properties of ZnO thin films prepared by DC magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    YANG Bing-chu; LIU Xiao-yan; GAO Fei; MA Xue-long

    2008-01-01

    ZnO thin films were prepared by direct current(DC) reactive magnetron sputtering under different oxygen partial pressures.And then the samples were annealed in vacuum at 450 ℃. The effects of the oxygen partial pressures and the treatment of annealing in vacuum on the photoluminescence and the concentration of six intrinsic defects in ZnO thin films such as oxygen vacancy(Vo),zinc vacancy(VZn), antisite oxygen(OZn), antisite zinc(ZnO), interstitial oxygen(Oi) and interstitial zinc(Zni) were studied. The results show that a green photoluminescence peak at 520 nm can be observed in all the samples, whose intensity increases with increasing oxygen partial pressure; for the sample annealed in vacuum, the intensity of the green peak increases as well. The green photoluminescence peak observed in ZnO may be attributed to zinc vacancy, which probably originates from transitions between electrons in the conduction band and zinc vacancy levels, or from transitions between electrons in zinc vacancy levels and up valence band.

  20. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Pitkänen, Marja; Salo, Erkki; Kenttä, Eija [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Tanskanen, Anne, E-mail: Anne.Tanskanen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Sajavaara, Timo, E-mail: timo.sajavaara@jyu.fi [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Karppinen, Maarit, E-mail: Maarit.Karppinen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Harlin, Ali [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland)

    2014-07-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al{sub 2}O{sub 3} of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al{sub 2}O{sub 3} thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al{sub 2}O{sub 3} • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli.

  1. Photocatalytic degradation of toluene using sprayed N-doped ZnO thin films in aqueous suspension.

    Science.gov (United States)

    Shinde, S S; Bhosale, C H; Rajpure, K Y

    2012-08-01

    Thin films of N-doped ZnO are synthesized via spray pyrolysis technique in aqueous medium using zinc acetate and ammonium acetate as precursors. Influence of N doping onto photochemical, structural, morphological, optical and thermal properties have been investigated. Structural analysis depicts hexagonal (wurtzite) crystal structure. The effect of N doping on the photocatalytic activity of N-doped ZnO in the degradation of toluene is studied and results are compared with pure ZnO. The results show that the rate of degradation of toluene over N-doped ZnO is higher as compared to that of pure ZnO and increases with increasing N doping up to 10 at.% and then decreases. The enhancement of photocatalytic activity of N-doped ZnO thin films is mainly due to their capability for reducing the electron hole pair recombination. The photocatalytic mineralization of toluene in aqueous solution has been studied by measuring COD and TOC. Possible reaction mechanism pathways during toluene degradation over N-doped ZnO has been proposed.

  2. Structural, optical and electrical properties of ZnO thin films prepared by spray pyrolysis: Effect of precursor concentration

    Indian Academy of Sciences (India)

    F Zahedi; R S Dariani; S M Rozati

    2014-05-01

    ZnO thin films have been prepared using zinc acetate precursor by spray pyrolytic decomposition of zinc acetate on glass substrates at 450 °C. Effect of precursor concentration on structural and optical properties has been investigated. ZnO films are polycrystalline with (002) plane as preferential orientation. The optical transmission spectrum shows that transmission increases with decrease in the concentration and the maximum transmission in visible region is about 95% for ZnO films prepared with 0.1 M. The direct band-gap value decreases from 3.37 to 3.19 eV, when the precursor concentration increases from 0.1 to 0.4 M. Photoluminescence spectra at room temperature show an ultraviolet (UV) emission at 3.26 eV and two visible emissions at 2.82 and 2.38 eV. Lowest resistivity is obtained at 2.09 cm for 0.3 M. The current–voltage characteristic of the ZnO thin films were measured in dark and under UV illumination. The values of photocurrent and photoresponsivity at 5 V are increased with increase in precursor concentration and reaches to maximum value of 1148 A and 0.287 A/W, respectively which is correlated to structural properties of ZnO thin films.

  3. Influence of pH on ZnO nanocrystalline thin films prepared by sol–gel dip coating method

    Indian Academy of Sciences (India)

    K Sivakumar; V Senthil Kumar; N Muthukumarasamy; M Thambidurai; T S Senthil

    2012-06-01

    ZnO nanocrystalline thin films have been prepared on glass substrates by sol–gel dip coating method. ZnO thin films have been coated at room temperature and at four different pH values of 4, 6, 8 and 10. The X-ray diffraction pattern showed that ZnO nanocrystalline thin films are of hexagonal structure and the grain size was found to be in the range of 25–45 nm. Scanning electron microscopic images show that the surface morphology improves with increase of pH values. TEM analysis reveals formation of ZnO nanocrystalline with an average grain size of 44 nm. The compositional analysis results show that Zn and O are present in the sample. Optical band studies show that the films are highly transparent and exhibit a direct bandgap. The bandgap has been found to lie in the range of 3.14–3.32 eV depending on pH suggesting the formation of ZnO nanocrystalline thin films.

  4. Effect of self-organization, defects, impurities, and autocatalytic processes on the parameters of ZnO films and nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Mezdrogina, M. M., E-mail: Margaret.M@mail.ioffe.ru; Eremenko, M. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Levitskii, V. S. [Saint-Petersburg State Electrotechnical University (LETI) (Russian Federation); Petrov, V. N.; Terukov, E. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Kaidashev, E. M.; Langusov, N. V. [Southern Federal University (Russian Federation)

    2015-11-15

    The effects of the parameters of ZnO-film deposition onto different substrates using the method of ac magnetron sputtering in a gas mixture of argon and oxygen hare studied. The phenomenon of self-organization is observed, which leads to invariability of the surface morphology of the ZnO films upon a variation in the substrate materials and deposition parameters. The parameters of the macro- and micro-photoluminescence spectra of the films differ insignificantly from the parameters of the photoluminescence spectra of bulk ZnO crystals obtained by the method of hydrothermal growth. The presence of intense emission with a narrow full-width at half-maximum (FWHM) in different regions of the spectrum allows ZnO films obtained by magnetron sputtering doped with rare-earth metal impurities (REIs) to be considered as a promising material for the creation of optoelectronic devices working in a broad spectral range. The possibility of the implementation of magnetic ordering upon legierung with REIs significantly broadens the functional possibilities of ZnO films. The parameters of the photoluminescence spectra of ZnO nanorods are determined by their geometrical parameters and by the concentration and type of the impurities introduced.

  5. Electron mobility and injection dynamics in mesoporous ZnO, SnO₂, and TiO₂ films used in dye-sensitized solar cells.

    Science.gov (United States)

    Tiwana, Priti; Docampo, Pablo; Johnston, Michael B; Snaith, Henry J; Herz, Laura M

    2011-06-28

    High-performance dye-sensitized solar cells are usually fabricated using nanostructured TiO(2) as a thin-film electron-collecting material. However, alternative metal-oxides are currently being explored that may offer advantages through ease of processing, higher electron mobility, or interface band energetics. We present here a comparative study of electron mobility and injection dynamics in thin films of TiO(2), ZnO, and SnO(2) nanoparticles sensitized with Z907 ruthenium dye. Using time-resolved terahertz photoconductivity measurements, we show that, for ZnO and SnO(2) nanoporous films, electron injection from the sensitizer has substantial slow components lasting over tens to hundreds of picoseconds, while for TiO(2), the process is predominantly concluded within a few picoseconds. These results correlate well with the overall electron injection efficiencies we determine from photovoltaic cells fabricated from identical nanoporous films, suggesting that such slow components limit the overall photocurrent generated by the solar cell. We conclude that these injection dynamics are not substantially influenced by bulk energy level offsets but rather by the local environment of the dye-nanoparticle interface that is governed by dye binding modes and densities of states available for injection, both of which may vary from site to site. In addition, we have extracted the electron mobility in the three nanoporous metal-oxide films at early time after excitation from terahertz conductivity measurements and compared these with the time-averaged, long-range mobility determined for devices based on identical films. Comparison with established values for single-crystal Hall mobilities of the three materials shows that, while electron mobility values for nanoporous TiO(2) films are approaching theoretical maximum values, both early time, short distance and interparticle electron mobility in nanoporous ZnO or SnO(2) films offer considerable scope for improvement.

  6. Characterization of sputtered ZnO films under different sputter-etching time of substrate

    Institute of Scientific and Technical Information of China (English)

    LI Cui-ping; YANG Bao-he; QIAN Li-rong; XU Sheng; DAI Wei; LI Ming-ji; LI Xiao-wei; GAO Cheng-yao

    2011-01-01

    Polycrystalline ZnO films are prepared using radio frequency magnetron sputtering on glass substrates which are sputteretched for different time.Both the size of ZnO grains and the root-mean-square (RMS) roughness decrease,as the sputteretching time of the substrate increases.More Zn atoms are bound to O atoms in the films,and the defect concentration is decreased with increasing sputter-etching time of substrate.Meanwhile,the crystallinity and c-axis orientation are improved at longer sputter-etching time of the substrate.The Raman peaks at 99 cm-1,438 cm-1 and 589 cm-1 are identified as E2(low),E2(high) and E1(LO) modes,respectively,and the position of E1(LO) peak blue shifts at longer sputter-etching time.The transmittances of the films,which are deposited on the substrate and etched for 10 min and 20 min,are higher in the visible region than that of the films deposited under longer sputter-etching time of 30 min.The bandgap increases from 3.23 eV to 3.27 eV with the increase of the sputter-etching time of substrate.

  7. Al-doped and in-doped ZnO thin films in heterojunctions with silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chabane, L.; Zebbar, N.; Kechouane, M. [LCMS, Faculty of Physics, University of Sciences and Technology (USTHB), BP 32-16111, Algiers (Algeria); Aida, M.S. [LCMet Interface, Faculty of Sciences, University of Constantine, 25000 (Algeria); Trari, M. [Laboratory of Storage and Valorization of Renewable Energies, Faculty of Chemistry (USTHB), BP 32-16111 Algiers (Algeria)

    2016-04-30

    The undoped, Al-doped and In-doped ZnO thin films were deposited by ultrasonic spray pyrolysis technique, onto glass and p-Si substrates and the physical properties of the films were investigated. The X-ray diffraction, optical analysis and electrical characterisations, indicate that the films were polycrystalline with hexagonal würtzite type structure and revealed that the aluminium doping deteriorates the crystalline and optical properties and enhances the electrical conductivity whereas indium doping improves all properties. The transport mechanism controlling the conduction through the heterojunctions was studied. For the heterostructures, the temperature dependent current–voltage characteristics showed rectifying behaviour in the dark, but current transport mechanism is not the same for all heterojunctions. Therefore, the presence of the interface states and volume defects are identified as limiting factors for obtaining a high quality heterojunction interface. - Highlights: • Al-doped and In-doped ZnO thin films have been deposited onto Si. • In-doped ZnO/p-Si heterojunction showed poor rectifying behaviour. • Al-doped ZnO/p-Si heterojunction showed a good rectifying at room temperature. • The carriers transport mechanisms was controlled by interfacial and volume defects.

  8. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2016-03-24

    We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  9. ZnO buffer layer for metal films on silicon substrates

    Science.gov (United States)

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  10. Thermal activation of nitrogen acceptors in ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Dangbegnon, J.K.; Talla, K.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth (South Africa)

    2010-06-15

    Nitrogen doping in ZnO is inhibited by spontaneous formation of compensating defects. Perfect control of the nitrogen doping concentration is required, since a high concentration of nitrogen could induce the formation of donor defects involving nitrogen. In this work, the effect of post-growth annealing in oxygen ambient on ZnO thin films grown by Metalorganic Chemical Vapor Deposition, using NO as both oxidant and nitrogen dopant, is studied. After annealing at 700 C and above, low-temperature photoluminescence shows the appearance of a transition at {proportional_to}3.23 eV which is interpreted as pair emission involving a nitrogen acceptor. A second transition at {proportional_to}3.15 eV is also discussed. This work suggests annealing as a potential means for p-type doping using nitrogen (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Structure and properties of Co-doped ZnO films prepared by thermal oxidization under a high magnetic field.

    Science.gov (United States)

    Li, Guojian; Wang, Huimin; Wang, Qiang; Zhao, Yue; Wang, Zhen; Du, Jiaojiao; Ma, Yonghui

    2015-01-01

    The effect of a high magnetic field applied during oxidation on the structure, optical transmittance, resistivity, and magnetism of cobalt (Co)-doped zinc oxide (ZnO) thin films prepared by oxidizing evaporated Zn/Co bilayer thin films in open air was studied. The relationship between the structure and properties of films oxidized with and without an applied magnetic field was analyzed. The results show that the high magnetic field obviously changed the structure and properties of the Co-doped ZnO films. The Lorentz force of the high magnetic field suppressed the oxidation growth on nanowhiskers. As a result, ZnO nanowires were formed without a magnetic field, whereas polyhedral particles formed under a 6 T magnetic field. This morphology variation from dendrite to polyhedron caused the transmittance below 1,200 nm of the film oxidized under a magnetic field of 6 T to be much lower than that of the film oxidized without a magnetic field. X-ray photoemission spectroscopy indicated that the high magnetic field suppressed Co substitution in the ZnO lattice, increased the concentration of oxygen vacancies, and changed the chemical state of Co. The increased concentration of oxygen vacancies affected the temperature dependence of the resistivity of the film oxidized under a magnetic field of 6 T compared with that of the film oxidized without a magnetic field. The changes of oxygen vacancy concentration and Co state caused by the application of the high magnetic field also increase the ferromagnetism of the film at room temperature. All of these results indicate that a high magnetic field is an effective tool to modify the structure and properties of ZnO thin films.

  12. Conductive ZnO:Zn Composites for High-Rate Sputtering Deposition of ZnO Thin Films

    Science.gov (United States)

    Zhou, Li Qin; Dubey, Mukul; Simões, Raul; Fan, Qi Hua; Neto, Victor

    2015-02-01

    We report an electrically conductive composite prepared by sintering ZnO and metallic Zn powders. Microstructure analysis combined with electrical conductivity studies indicated that when the proportion of metallic Zn reached a threshold (˜20 wt.%), a metal matrix was formed in accordance with percolation theory. This composite has potential as a sputtering target for deposition of high-quality ZnO. Use of the ZnO:Zn composite completely eliminates target poisoning effects in reactive sputtering of the metal, and enables deposition of thin ZnO films at rates much higher than those obtained by sputtering of pure ZnO ceramic targets. The optical transmittance of the ZnO films prepared by use of this composite is comparable with that of films produced by radio frequency sputtering of pure ZnO ceramic targets. The sputtering characteristics of the conductive ZnO:Zn composite target are reported, and possible mechanisms of the high rate of deposition are also discussed.

  13. Synthesis and characterization of ZnO nanowires by thermal oxidation of Zn thin films at various temperatures.

    Science.gov (United States)

    Khanlary, Mohammad Reza; Vahedi, Vahid; Reyhani, Ali

    2012-05-02

    In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of 250 nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between 450 °C to 650 °C. Surface morphology, structural and optical properties of the ZnO nanowires were examined by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and photoluminescence (PL) measurements. XRD analysis demonstrated that the ZnO nanowires has a wurtzite structure with orientation of (002), and the nanowires prepared at 600 °C has a better crystalline quality than samples prepared at other temperatures. SEM results indicate that by increasing the oxidation temperature, the dimensions of the ZnO nanowires increase. The optimum temperature for synthesizing high density, ZnO nanowires was determined to be 600 °C. EDX results revealed that only Zn and O are present in the samples, indicating a pure ZnO composition. The PL spectra of as-synthesized nanowires exhibited a strong UV emission and a relatively weak green emission.

  14. Synthesis and Characterization of ZnO Nanowires by Thermal Oxidation of Zn Thin Films at Various Temperatures

    Directory of Open Access Journals (Sweden)

    Ali Reyhani

    2012-05-01

    Full Text Available In this research high-quality zinc oxide (ZnO nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of 250 nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between 450 °C to 650 °C. Surface morphology, structural and optical properties of the ZnO nanowires were examined by scanning electron microscope (SEM, X-ray diffraction (XRD, energy dispersive X-ray (EDX and photoluminescence (PL measurements. XRD analysis demonstrated that the ZnO nanowires has a wurtzite structure with orientation of (002, and the nanowires prepared at 600 °C has a better crystalline quality than samples prepared at other temperatures. SEM results indicate that by increasing the oxidation temperature, the dimensions of the ZnO nanowires increase. The optimum temperature for synthesizing high density, ZnO nanowires was determined to be 600 °C. EDX results revealed that only Zn and O are present in the samples, indicating a pure ZnO composition. The PL spectra of as-synthesized nanowires exhibited a strong UV emission and a relatively weak green emission.

  15. Variation of microstructural and optical properties in SILAR grown ZnO thin films by thermal treatment.

    Science.gov (United States)

    Valanarasu, S; Dhanasekaran, V; Chandramohan, R; Kulandaisamy, I; Sakthivelu, A; Mahalingam, T

    2013-08-01

    The influence of thermal treatment on the structural and morphological properties of the ZnO films deposited by double dip Successive ionic layer by adsorption reaction is presented. The effect of annealing temperature and time in air ambient is presented in detail. The deposited films were annealed from 200 to 400 degrees C in air and the structural properties were determined as a function of annealing temperature by XRD. The studies revealed that films were exhibiting preferential orientation along (002) plane. The other structural parameters like the crystallite size (D), micro strain (epsilon), dislocation density (delta) and stacking fault (alpha) of as-deposited and annealed ZnO films were evaluated and reported. The optical properties were also studied and the band gap of the ZnO thins films varied from 3.27 to 3.04 eV with the annealing temperature. SEM studies revealed that the hexagonal shaped grains with uniformly distributed morphology in annealed ZnO thin films. It has been envisaged using EDX analysis that the near stoichiometric composition of the film can be attained by thermal treatment during which microstructural changes do occur.

  16. Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    Said Benramache; Foued Chabane; Boubaker Benhaoua; Fatima Z.Lemmadi

    2013-01-01

    This paper examines the growth of ZnO thin films on glass substrate at 350 ℃ using an ultrasonic spray technique.We have investigated the influence of growth time ranging from 1 to 4 min on structural,optical and electrical properties of ZnO thin films.The as-grown films exhibit a hexagonal structure wurtzite and are (002) oriented.The maximum value of grain size G =63.99 nm is attained for ZnO films grown at 2 min.The average transmittance is about 80%,thus the films are transparent in the visible region.The optical gap energy is found to increase from 3.26 to 3.37 eV with growth time increased from 1 to 2 min.The minimum value of electrical resistivity of the films is 0.13 Ω·cm obtained at 2 min.A systematic study on the influence of growth time on the properties of ZnO thin films deposited by ultrasonic spray at 350 ℃ has been reported.

  17. Effect of surface microstructure and wettability on plasma protein adsorption to ZnO thin films prepared at different RF powers

    Energy Technology Data Exchange (ETDEWEB)

    Huang Zhanyun; Chen Min; Chen Dihu [State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275 (China); Pan Shirong, E-mail: stscdh@mail.sysu.edu.c [Artificial Heart Lab, the 1st Affiliate Hospital of Sun Yat-Sen University, Guangzhou 510080 (China)

    2010-10-01

    In this paper, the adsorption behavior of plasma proteins on the surface of ZnO thin films prepared by radio frequency (RF) sputtering under different sputtering powers was studied. The microstructures and surface properties of the ZnO thin films were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible optical absorption spectroscopy and contact angle techniques. The results show that the ZnO thin films have better orientation of the (0 0 2) peak with increasing RF power, especially at around 160 W, and the optical band gap of the ZnO films varies from 3.2 to 3.4 eV. The contact angle test carried out by the sessile drop technique denoted a hydrophobic surface of the ZnO films, and the surface energy and adhesive work of the ZnO thin films decreased with increasing sputtering power. The amounts of human fibrinogen (HFG) and human serum albumin (HSA) adsorbing on the ZnO films and reference samples were determined by using enzyme-linked immunosorbent assay (ELISA). The results show that fewer plasma proteins and a smaller HFG/HSA ratio adsorb on the ZnO thin films' surface.

  18. Effect of surface microstructure and wettability on plasma protein adsorption to ZnO thin films prepared at different RF powers.

    Science.gov (United States)

    Huang, Zhan-Yun; Chen, Min; Pan, Shi-Rong; Chen, Di-Hu

    2010-10-01

    In this paper, the adsorption behavior of plasma proteins on the surface of ZnO thin films prepared by radio frequency (RF) sputtering under different sputtering powers was studied. The microstructures and surface properties of the ZnO thin films were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible optical absorption spectroscopy and contact angle techniques. The results show that the ZnO thin films have better orientation of the (0 0 2) peak with increasing RF power, especially at around 160 W, and the optical band gap of the ZnO films varies from 3.2 to 3.4 eV. The contact angle test carried out by the sessile drop technique denoted a hydrophobic surface of the ZnO films, and the surface energy and adhesive work of the ZnO thin films decreased with increasing sputtering power. The amounts of human fibrinogen (HFG) and human serum albumin (HSA) adsorbing on the ZnO films and reference samples were determined by using enzyme-linked immunosorbent assay (ELISA). The results show that fewer plasma proteins and a smaller HFG/HSA ratio adsorb on the ZnO thin films' surface.

  19. Influence of water content in mixed solvent on surface morphology, wettability, and photoconductivity of ZnO thin films.

    Science.gov (United States)

    Zhao, Min; Shang, Fengjiao; Lv, Jianguo; Song, Ying; Wang, Feng; Zhou, Zhitao; He, Gang; Zhang, Miao; Song, Xueping; Sun, Zhaoqi; Wei, Yiyong; Chen, Xiaoshuang

    2014-01-01

    ZnO thin films have been synthesized by means of a simple hydrothermal method with different solvents. The effect of deionized water content in the mixed solvents on the surface morphology, crystal structure, and optical property has been investigated by scanning electron microscopy, X-ray diffraction, and UV-Vis spectrophotometer. A large number of compact and well-aligned hexagonal ZnO nanorods and the maximal texture coefficient have been observed in the thin film, which is grown in the mixed solvent with x = 40%. A lot of sparse, diagonal, and pointed nanorods can be seen in the ZnO thin film, which is grown in the 40-mL DI water solution. The optical band gap decreases firstly and then increases with the increase of x. Reversible wettability of ZnO thin films were studied by home-made water contact angle apparatus. Reversible transition between hydrophobicity and hydrophilicity may be attributed to the change of surface chemical composition, surface roughness and the proportion of nonpolar planes on the surface of ZnO thin films. Photocurrent response of ZnO thin films grown at different solvents were measured in air. The response duration of the thin film, which is grown in the solvent with x = 40%, exhibits a fast growth in the beginning but cannot approach the saturate current value within 100 s. The theoretical mechanism for the slower growth or decay duration of the photocurrent has been discussed in detail.

  20. Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy.

    Science.gov (United States)

    Suja, Mohammad; Bashar, Sunayna B; Morshed, Muhammad M; Liu, Jianlin

    2015-04-29

    Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1.54 × 10(18) cm(-3), a low resistivity of 0.6 Ω cm, and a moderate mobility of 6.65 cm(2) V(-1) s(-1) at room temperature. Metal oxide semiconductor capacitor devices have been fabricated on the Cu-doped ZnO films, and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as X-ray diffraction, X-ray photoelectron, Raman, and absorption spectroscopies are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO.

  1. Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    LI Li; FANG Liang; CHEN Ximing; LIU Gaobin; LIU Jun; YANG Fengfan; FU Guangzong; KONG Chunyang

    2007-01-01

    Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containing Al (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400 ℃, respectively) were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.

  2. Effect of stress on optical band gap of ZnO thin films with substrate temperature by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Rao, T. Prasada, E-mail: prasadview@gmail.co [Department of physics, National Institute of Technology, Tiruchirappalli 620015 (India); Kumar, M.C. Santhosh, E-mail: santhoshmc@yahoo.co [Department of physics, National Institute of Technology, Tiruchirappalli 620015 (India); Angayarkanni, S. Anbumozhi; Ashok, M. [Department of physics, National Institute of Technology, Tiruchirappalli 620015 (India)

    2009-10-19

    Zinc oxide (ZnO) thin films have been deposited with various substrate temperatures by spray pyrolysis method onto glass substrates. The effects of substrate temperature on the crystallization behavior and optical properties of the films have been studied. The evolution of strain and stress effects in ZnO thin films on glass substrate has been studied using X-ray diffraction. The films deposited at low substrate temperature have large compressive stress of 1.77 GPa, which relaxed to 1.47 GPa as the substrate temperature increased to 450 deg. C. Optical parameters such as optical transmittance, reflectance, dielectric constant, refractive index and energy band gap have been studied and discussed with respect to substrate temperature. All films exhibit a transmittance of about 85% in the visible region. It was found that the compressive stress in the films causes a decrease in the optical band gap.

  3. Synthesis of ZnO Nanowires and Their Photovoltaic Application: ZnO Nanowires/AgGaSe2 Thin Film Core-Shell Solar Cell

    Directory of Open Access Journals (Sweden)

    Elif Peksu

    2015-01-01

    Full Text Available In this investigation, hydrothermal technique was employed for the synthesis of well-aligned dense arrays of ZnO nanowires (NWs on a wide range of substrates including silicon, soda-lime glass (SLG, indium tin oxide, and polyethylene terephthalate (PET. Results showed that ZnO NWs can be successfully grown on any substrate that can withstand the growth temperature (~90°C and precursor solution chemicals. Results also revealed that there was a strong impact of growth time and ZnO seed layer deposition route on the orientation, density, diameter, and uniformity of the synthesized nanowires. A core-shell n-ZnO NWs/p-AgGaSe2 (AGS thin film solar cell was fabricated as a device application of synthesized ZnO nanowires by decoration of nanowires with ~700 nm thick sputtering deposited AGS thin film layer, which demonstrated an energy conversion efficiency of 1.74% under 100 mW/cm2 of simulated solar illumination.

  4. Robust room temperature ferromagnetism and band gap tuning in nonmagnetic Mg doped ZnO films

    Science.gov (United States)

    Quan, Zhiyong; Liu, Xia; Qi, Yan; Song, Zhilin; Qi, Shifei; Zhou, Guowei; Xu, Xiaohong

    2017-03-01

    Mg doped ZnO films with hexagonal wurtzite structure were deposited on c-cut sapphire Al2O3 substrates by pulsed laser deposition. Both room temperature ferromagnetism and band gap of the films simultaneously tuned by the concentration of oxygen vacancies were performed. Our results further reveal that the singly occupied oxygen vacancies should be responsible for the room temperature ferromagnetism and band gap narrowing. Singly occupied oxygen vacancies having the localized magnetic moments form bound magnetic polarons, which results in a long-range ferromagnetic ordering due to Mg doping. Moreover, band gap narrowing of the films is probably due to the formation of impurity band in the vicinity of valence band, originating from singly occupied oxygen vacancies. These results may build a bridge to understand the relationship between the magnetic and optical properties in oxide semiconductor, and are promising to integrate multiple functions in one system.

  5. Influence of Te and Se doping on ZnO films growth by SILAR method

    Science.gov (United States)

    Güney, Harun; Duman, Ćaǧlar

    2016-04-01

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  6. Difference in magnetic properties between Co-doped ZnO powder and thin film

    Institute of Scientific and Technical Information of China (English)

    Liu Xue-Chao; Shi Er-Wei; Chen Zhi-Zhan; Zhang Hua-Wei; Zhang Tao; Song Li-Xin

    2007-01-01

    This paper reports that the Zn0.95Co0.05O polycrystalline powder and thin film were prepared by sol-gel technique under the similar preparation conditions. The former does not show typical ferromagnetic behaviour, while the latter exhibits obvious ferromagnetic properties at 5 K and room temperature. The UV-vis spectra and x-ray absorption spectra show that Co2+ ions are homogeneously incorporated into ZnO lattice without forming secondary phases. The distinct difference between film and powder sample is the c-axis (002) preferential orientation indicated by the x-ray diffraction pattern and field emission scanning electron microscopy measurement, which may be the reason why Zn0.95Co0.05O film shows ferromagnetic behaviour.

  7. Enhanced stimulated emission in ZnO thin films using microdisk top-down structuring

    Energy Technology Data Exchange (ETDEWEB)

    Nomenyo, K.; Kostcheev, S.; Lérondel, G. [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Gadallah, A.-S. [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Department of Laser Sciences and Interactions, National Institute of Laser Enhanced Sciences, Cairo University, Giza (Egypt); Rogers, D. J. [Nanovation, 8, route de Chevreuse, 78117 Châteaufort (France)

    2014-05-05

    Microdisks were fabricated in zinc oxide (ZnO) thin films using a top-down approach combining electron beam lithography and reactive ion etching. These microdisk structured thin films exhibit a stimulated surface emission between 3 and 7 times higher than that from a reference film depending on the excitation power density. Emission peak narrowing, reduction in lasing threshold and blue-shifting of the emission wavelength were observed along with enhancement in the emitted intensity. Results indicate that this enhancement is due to an increase in the internal quantum efficiency combined with an amplification of the stimulated emission. An analysis in terms of waveguiding is presented in order to explain these effects. These results demonstrate that very significant gains in emission can be obtained through conventional microstructuration without the need for more onerous top-down nanostructuration techniques.

  8. Crystalline polarity of ZnO thin films deposited under dc external bias on various substrates

    Science.gov (United States)

    Ohsawa, Takeo; Tsunoda, Kei; Dierre, Benjamin; Zellhofer, Caroline; Grachev, Sergey; Montigaud, Hervé; Ishigaki, Takamasa; Ohashi, Naoki

    2017-04-01

    Effects of the nature of substrates, either crystalline or non-crystalline, on the structure and properties of ZnO films deposited by sputtering were investigated. This study focuses mainly on the role of the external electric bias applied to substrates during magnetron sputtering deposition in controlling crystalline polarity, i.e., Zn-face or O-face, and the resulting film properties. It was found that polarity control was achieved on silica and silicon substrates but not on sapphire substrates. The substrate bias did influence the lattice parameters in the structural formation; however, the selection of the substrate type had a significant influence on the defect structures and the film properties.

  9. Temperature dependence of the spin relaxation in highly degenerate ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Prestgard, M. C.; Siegel, G.; Tiwari, A., E-mail: tiwari@eng.utah.edu [Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Materials Research Science and Engineering Center, University of Utah, Salt Lake City, Utah 84112 (United States); Roundy, R.; Raikh, M. [Materials Research Science and Engineering Center, University of Utah, Salt Lake City, Utah 84112 (United States); Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112 (United States)

    2015-02-28

    Zinc oxide is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be achieved, a thorough scientific understanding of the various spin transport and relaxation processes undergone in this material is essential. In the present paper, we are reporting our investigations into these processes via temperature dependent Hanle experiments. ZnO thin films were deposited on c-axis sapphire substrates using a pulsed laser deposition technique. Careful structural, optical, and electrical characterizations of the films were performed. Temperature dependent non-local Hanle measurements were carried out using an all-electrical scheme for spin injection and detection over the temperature range of 20–300 K. From the Hanle data, spin relaxation time in the films was determined at different temperatures. A detailed analysis of the data showed that the temperature dependence of spin relaxation time follows the linear-in-momentum Dyakonov-Perel mechanism.

  10. An insight into doping mechanism in Sn–F co-doped transparent conducting ZnO films by correlating structural, electrical and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Mallick, Arindam; Sarkar, Sanjit; Ghosh, Tushar; Basak, Durga, E-mail: sspdb@iacs.res.in

    2015-10-15

    On the face of massively growing market of transparent optoelectronics, developing ZnO-based transparent conductive thin films as a promising substitute for indium-free transparent electrode is extremely important. However, the detailed function of the dopants, especially co-dopants acting on the electrical and optical properties of ZnO-based transparent conductive thin films is not clear yet. We present a detailed comparative investigation on the structural, electrical and optical properties of pulsed laser deposited ZnO thin films co-doped with Sn and F for the first time. An unexpected expansion in the lattice structure has been observed when Zn{sup 2+} are replaced by Sn{sup 4+} having smaller ionic radius. Electrical measurements show that there is no anticipated change in the carrier concentration with the dopant concentration. A minimum resistivity of 2.56 × 10{sup −3} Ohm-cm with a carrier concentration of 4.41 × 10{sup 20} cm{sup −3} has been obtained for 1 at.% each Sn–F co-doped film. Most interestingly, a significant improvement in the ultraviolet (UV)/visible (VIS) photoluminescence peak intensity in Sn doped and Sn–F co-doped films in correlation with the structural and electrical properties allows us to propose that Sn doping into ZnO lattice causes a screening of the native Zn vacancy defects. While the presence of F co-dopant induces Sn{sup 2+} to occupy the lattice sites, as evidenced from the lattice expansion, an insignificant increase in the carrier concentration as well as enhanced UV emission of the co-doped films. The results obtained in this study shed light on the development of ZnO-based transparent electrodes. - Highlights: • A comparative investigation on electrical and optical properties of F, Sn and Sn–F co-doped ZnO films has been done. • There is no significant correlation between the carrier concentration and dopant content. • The UV/vis PL peak intensity of the films gets better in Sn doped and best in the Sn

  11. Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible Substrates

    Science.gov (United States)

    Chen, Tao-Hsing; Chen, Ting-You

    2015-01-01

    An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga–doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the Zn