WorldWideScience

Sample records for based thin films

  1. Carbon nanotube based transparent conductive thin films.

    Science.gov (United States)

    Yu, X; Rajamani, R; Stelson, K A; Cui, T

    2006-07-01

    Carbon nanotube (CNT) based optically transparent and electrically conductive thin films are fabricated on plastic substrates in this study. Single-walled carbon nanotubes (SWNTs) are chemically treated with a mixture of concentrated sulfuric acid and nitric acid before being dispersed in aqueous surfactant-contained solutions. SWNT thin films are prepared from the stable SWNT solutions using wet coating techniques. The 100 nm thick SWNT thin film exhibits a surface resistivity of 6 kohms/square nanometer with an average transmittance of 88% on the visible light range, which is three times better than the films prepared from the high purity as-received SWNTs.

  2. Methods for preparing colloidal nanocrystal-based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kagan, Cherie R.; Fafarman, Aaron T.; Choi, Ji-Hyuk; Koh, Weon-kyu; Kim, David K.; Oh, Soong Ju; Lai, Yuming; Hong, Sung-Hoon; Saudari, Sangameshwar Rao; Murray, Christopher B.

    2016-05-10

    Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.

  3. Ultrahydrophobicity of Polydimethylsiloxanes-Based Multilayered Thin Films

    Directory of Open Access Journals (Sweden)

    Hongyan Gao

    2009-01-01

    Full Text Available The formation of polydimethylsiloxanes (PDMSs-based layer-by-layer multilayer ultrathin films on charged surfaces prepared from water and phosphate buffer solutions has been investigated. The multilayer films prepared under these conditions showed different surface roughness. Nanoscale islands and network structures were observed homogeneously on the multilayer film prepared from pure water solutions, which is attributing to the ultrahydrobic property of the multilayer film. The formation of nanoscale islands and network structures was due to the aggregation of PDMS-based polyelectrolytes in water. This work provides a facile approach for generating ultrahydrophobic thin films on any charged surfaces by PDMS polyelectrolytes.

  4. A PC based thin film dosimeter system

    DEFF Research Database (Denmark)

    Miller, A.; Hargittai, P.; Kovacs, A.

    2000-01-01

    A dosimeter system based on the Riso B3 dosimeter film, an office scanner for use with PC and the associated software is presented. The scanned image is analyzed either with standard software (Paint Shop Pro 5 or Excel) functions or with the computer code "Scanalizer" that allows presentation...

  5. Hybrid Thin Films Based Upon Polyoxometalates-Polymer Assembly

    Science.gov (United States)

    Qi, Na; Jing, Benxin; Zhu, Yingxi

    2014-03-01

    Block copolymers (BCPs) and polyoxometalates (POMs) have been used individually as building blocks for design and synthesis of novel functional materials. POM nanoclusters, the assemblies of transition metal oxides with well-defined atomic coordination structure, have been recently explored as novel nanomaterials... for catalysis, semiconductors, and even anti-cancer treatment due to their unique chemical, optical and electrical characteristics. We have explored the blending of inorganic POM nanocluster with BCPs into hierarchaically structured inorganic-organic hybrid nanocomposites. Using polystyrene-b-poly(ethylene oxide) (PS-b-PEO) thin films as the template, we have observed that the spatial organization of BCP thin films is modified by molybdenum based POM nanocluster to form 2D in-plane hexagonal ordered or 3D ordered network of POM-BCP assemblies, depending on the concentration ratio of POM to PS-b-PEO. The dielectric properties of such hybrid thin films can be enhanced by embedded POMs but show a strong dependence on the supramolecular structures of POM-polymer complexes. The assembly of nanoclusters in BCP-templated thin films could pave a new path to design new hybrid nanocomposites with uniquely combined functionality and material properties.

  6. Organic Thin-Film Transistor (OTFT)-Based Sensors

    OpenAIRE

    Daniel Elkington; Nathan Cooling; Warwick Belcher; Dastoor, Paul C; Xiaojing Zhou

    2014-01-01

    Organic thin film transistors have been a popular research topic in recent decades and have found applications from flexible displays to disposable sensors. In this review, we present an overview of some notable articles reporting sensing applications for organic transistors with a focus on the most recent publications. In particular, we concentrate on three main types of organic transistor-based sensors: biosensors, pressure sensors and “e-nose”/vapour sensors.

  7. Organic Thin-Film Transistor (OTFT-Based Sensors

    Directory of Open Access Journals (Sweden)

    Daniel Elkington

    2014-04-01

    Full Text Available Organic thin film transistors have been a popular research topic in recent decades and have found applications from flexible displays to disposable sensors. In this review, we present an overview of some notable articles reporting sensing applications for organic transistors with a focus on the most recent publications. In particular, we concentrate on three main types of organic transistor-based sensors: biosensors, pressure sensors and “e-nose”/vapour sensors.

  8. Electrochromic Devices Based on Porous Tungsten Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Y. Djaoued

    2012-01-01

    Full Text Available Recent developments in the synthesis of transition metal oxides in the form of porous thin films have opened up opportunities in the construction of electrochromic devices with enhanced properties. In this paper, synthesis, characterization and electrochromic applications of porous WO3 thin films with different nanocrystalline phases, such as hexagonal, monoclinic, and orthorhombic, are presented. Asymmetric electrochromic devices have been constructed based on these porous WO3 thin films. XRD measurements of the intercalation/deintercalation of Li+ into/from the WO3 layer of the device as a function of applied coloration/bleaching voltages show systematic changes in the lattice parameters associated with structural phase transitions in LixWO3. Micro-Raman studies show systematic crystalline phase changes in the spectra of WO3 layers during Li+ ion intercalation and deintercalation, which agree with the XRD data. These devices exhibit interesting optical modulation (up to ~70% due to intercalation/deintercalation of Li ions into/from the WO3 layer of the devices as a function of applied coloration/bleaching voltages. The obtained optical modulation of the electrochromic devices indicates that, they are suitable for applications in electrochromic smart windows.

  9. The corrosion behavior of nanocrystalline nickel based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Danışman, Murat, E-mail: muratdan@gmail.com

    2016-03-01

    In this study, the effect of Cr addition on corrosion behavior of Ni thin films were investigated. Ni thin films and Ni films with three different Cr content were deposited on glass substrates by magnetron sputtering. After deposition process, thin films with different Cr content were thermally treated in a rapid thermal process system. Phase analysis and grain size calculations of the samples were carried out by X-ray diffraction analysis. In order to reveal corrosion properties, potentiodynamic tests were conducted on samples. Analysis revealed that, although Cr addition to pure-Ni thin films improved their corrosion resistance, occurrence of σ-Cr{sub 3}Ni{sub 2} phase at higher Cr contents increased corrosion rate. The corrosion properties of the samples were also investigated by electrochemical impedance spectroscopy and surface related parameters caused by corrosion reactions were calculated. The analysis revealed that at 55% wt. Cr, rapid ion exchange occurred and highest corrosion current, 23.4 nA cm{sup −2} was observed. - Highlights: • Thin film Ni–Cr samples were deposited on glass substrate. • Effect of Cr addition on corrosion behavior of Ni thin films were investigated. • Potentiodynamic tests and electrochemical impedance spectroscopy methods were used. • Cr content in Ni thin films plays and important role on corrosion. • Up to a certain Cr content, Cr addition reduces corrosion rate.

  10. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  11. Optimal grid-based methods for thin film micromagnetics simulations

    Science.gov (United States)

    Muratov, C. B.; Osipov, V. V.

    2006-08-01

    Thin film micromagnetics are a broad class of materials with many technological applications, primarily in magnetic memory. The dynamics of the magnetization distribution in these materials is traditionally modeled by the Landau-Lifshitz-Gilbert (LLG) equation. Numerical simulations of the LLG equation are complicated by the need to compute the stray field due to the inhomogeneities in the magnetization which presents the chief bottleneck for the simulation speed. Here, we introduce a new method for computing the stray field in a sample for a reduced model of ultra-thin film micromagnetics. The method uses a recently proposed idea of optimal finite difference grids for approximating Neumann-to-Dirichlet maps and has an advantage of being able to use non-uniform discretization in the film plane, as well as an efficient way of dealing with the boundary conditions at infinity for the stray field. We present several examples of the method's implementation and give a detailed comparison of its performance for studying domain wall structures compared to the conventional FFT-based methods.

  12. Optoelectronics Devices Based on Zinc Oxide Thin Films and Nanostructures

    OpenAIRE

    Chu, Sheng

    2011-01-01

    Optoelectronics devices based on ZnO thin films and nanostructures are discussed in this dissertation. A ZnO homojunction LED was demonstrated. Sb-doped p-type ZnO and Ga-doped n-type ZnO on Si (100) substrate were used for the LED device. After achieving ohmic contacts on both types of ZnO, the device showed rectifying current-voltage (I-V) characteristics. Under forward bias, the device successfully showed ultraviolet emissions. The emission properties were analyzed and the emission was con...

  13. Nucleophilic stabilization of water-based reactive ink for titania-based thin film inkjet printing

    DEFF Research Database (Denmark)

    Gadea, Christophe; Marani, Debora; Esposito, Vincenzo

    2017-01-01

    Drop on demand deposition (DoD) of titanium oxide thin films (<500 nm) is performed via a novel titanium-alkoxide-based solution that is tailored as a reactive ink for inkjet printing. The ink is developed as water-based solution by a combined use of titanium isopropoxide and n-methyldiethanolami......Drop on demand deposition (DoD) of titanium oxide thin films (... of MDEA is here elucidated in terms of long term stability. The ink printability parameter (Z) is optimized, resulting in a reactive solution with printability, Z, >1, and chemical stability up to 600 h. Thin titanium oxide films (

  14. Solution-Processed Indium Oxide Based Thin-Film Transistors

    Science.gov (United States)

    Xu, Wangying

    Oxide thin-film transistors (TFTs) have attracted considerable attention over the past decade due to their high carrier mobility and excellent uniformity. However, most of these oxide TFTs are usually fabricated using costly vacuum-based techniques. Recently, the solution processes have been developed due to the possibility of low-cost and large-area fabrication. In this thesis, we have carried out a detailed and systematic study of solution-processed oxide thin films and TFTs. At first, we demonstrated a passivation method to overcome the water susceptibility of solution-processed InZnO TFTs by utilizing octadecylphosphonic acid (ODPA) self-assembled monolayers (SAMs). The unpassivated InZnO TFTs exhibited large hysteresis in their electrical characteristics due to the adsorbed water at the semiconductor surface. Formation of a SAM of ODPA on the top of InZnO removed water molecules weakly absorbed at the back channel and prevented water diffusion from the surroundings. Therefore the passivated devices exhibited significantly reduced hysteretic characteristics. Secondly, we developed a simple spin-coating approach for high- k dielectrics (Al2O3, ZrO2, Y 2O3 and TiO2). These materials were used as gate dielectrics for solution-processed In2O3 or InZnO TFTs. Among the high-k dielectrics, the Al2O3-based devices showed the best performance, which is attributed to the smooth dielectric/semiconductor interface and the low interface trap density besides its good insulating property. Thirdly, the formation and properties of Al2O3 thin films under various annealing temperatures were intensively studied, revealing that the sol-gel-derived Al2O3 thin film undergoes the decomposition of organic residuals and nitrate groups, as well as conversion of aluminum hydroxides to form aluminum oxide. Besides, the Al2O 3 film was used as gate dielectric for solution-processed oxide TFTs, resulting in high mobility and low operating voltage. Finally, we proposed a green route for

  15. Homogenization studies for optical sensors based on sculptured thin films

    OpenAIRE

    Jamaian, Siti Suhana

    2013-01-01

    In this thesis we investigate theoretically various types of sculptured thin film (STF) envisioned as platforms for optical sensing. A STF consists of an array of parallel nanowires which can be grown on a substrate using vapour deposition techniques. Typically, each nanowire has a diameter in the range from ~ 10-300 nmwhile the film thickness is ~

  16. Large area radiation detectors based on II VI thin films

    Science.gov (United States)

    Quevedo-Lopez, Manuel

    2015-03-01

    The development of low temperature device technologies that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible, low metal content, sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, neutron/gamma-ray/x-ray detectors, etc. In this talk, our efforts to develop novel CMOS integration schemes, circuits, memory, sensors as well as novel contacts, dielectrics and semiconductors for flexible electronics are presented. In particular, in this presentation we discuss fundamental materials properties including crystalline structure, interfacial reactions, doping, etc. defining performance and reliability of II-VI-based radiation sensors. We investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. Besides II-VI materials, we also evaluated several diode materials, Si, CdTe,GaAs, C (diamond), and ZnO, and two neutron converter materials,10B and 6LiF. We determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.

  17. AZO thin film-based UV sensors: effects of RF power on the films

    Science.gov (United States)

    Akin, Nihan; Ceren Baskose, U.; Kinaci, Baris; Cakmak, Mehmet; Ozcelik, Suleyman

    2015-06-01

    Al-doped zinc oxide (AZO) thin films of thickness 150 nm were deposited on polyethylene terephthalate (PET) substrates by radio frequency (RF) magnetron sputtering method under various RF powers in the range of 25-100 W. Structural, morphological, optical and electrical properties of the films were investigated by X-ray diffractometer, atomic force microscope, UV-Vis spectrometer and Hall effect measurement system. All the obtained films had a highly preferred orientation along [002] direction of the c-axis perpendicular to the flexible PET substrate and had a high-quality surface. The energy band gap ( E g) values of the films varied in the range of 3.30-3.43 eV. The minimum resistivity of 1.84 × 10-4 Ω cm was obtained at a 50 W RF power. The small changes in the RF power had a critical important role on the structural, optical and electrical properties of the sputtered AZO thin films on flexible PET substrate. In addition, UV sensing of the fabricated AZO thin film-based sensors was explored by using current-voltage (I-V) characteristics. The sensors were sensitive in the UV region of the electromagnetic spectrum.

  18. Thin film tin oxide-based propane gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Carbajal-Franco, G.; Tiburcio-Silver, A. [Inst. Tecnologico de Toluca, Metepec (Mexico); Dominguez, J.M. [Instituto Mexicano del Petroleo, Apdo. postal 14-805, 07730, D. F., Mexico (Mexico); Sanchez-Juarez, A. [CIE-UNAM, Apdo. postal 34, 62580, Temixco (Mexico)

    2000-09-03

    In this work, we report on the elaboration of SnO{sub 2} and SnO{sub 2}:Ag thin films ({proportional_to}200 nm in thickness) obtained by heat-treatment in oxygen of Sn and Sn:Ag thin films deposited by vacuum evaporation on alumina substrates. A simple and very cheap procedure was used to dope the SnO{sub 2} films with Ag. Preliminary results on the sensing properties of these films are presented. Films are able to detect selectively the presence of C{sub 3}H{sub 8} in the LP-gas domestic mixture. Doping with Ag allows reductions in the optimal operation temperature of the SnO{sub 2} sensors by 100 C. This a very important result when detecting such a highly explosive gas. (orig.)

  19. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  20. Impedance effect of manganite thin film-based photodetectors

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    We report on the photodetector structures based on perovskite manganite La0.67Ca0.33MnO3 thin films on tilted SrTiO3 (001) substrates. The photovoltaic effect has been observed in response to excitation by 308 nm ultraviolet laser pulse irradiation in duration of 20 ns at room temperature. The outputs obtained required no amplification. To reduce the deformation of the signal detected, a series of testing measurements were made to investigate the impedance effect. When the impedance at the oscilloscope end matched to the co-axis cable, the signal trace was almost triangular and symmetrical, with response time equal to the excitation laser. In addation, the response linearly depends on the irradiated area for low on-sample energy. The devices work well under unbiased conditions and so are simple to configure for practical applications.

  1. Tungsten-rhenium thin film thermocouples for SiC-based ceramic matrix composites

    Science.gov (United States)

    Tian, Bian; Zhang, Zhongkai; Shi, Peng; Zheng, Chen; Yu, Qiuyue; Jing, Weixuan; Jiang, Zhuangde

    2017-01-01

    A tungsten-rhenium thin film thermocouple is designed and fabricated, depending on the principle of thermal-electric effect caused by the high temperature. The characteristics of thin film thermocouples in different temperatures are investigated via numerical analysis and analog simulation. The working mechanism and thermo-electric features of the thermocouples are analyzed depending on the simulation results. Then the thin film thermocouples are fabricated and calibrated. The calibration results show that the thin film thermocouples based on the tungsten-rhenium material achieve ideal static characteristics and work well in the practical applications.

  2. Polyester-based thin films with high photosensitivity

    Energy Technology Data Exchange (ETDEWEB)

    POTTER,KELLY SIMMONS; POTTER JR.,BARRETT G.; WHEELER,DAVID R.; JAMISON,GREGORY M.

    2000-02-29

    A great deal of research has been done to understand the photosensitive optical response of inorganic glasses, which exhibit a permanent, photo-induced refractive index change due to the presence of optically active point defects in the glass structure. In the present work, the authors have performed a preliminary study of the intrinsic photosensitivity of a polyester containing a cinnamylindene malonate group (CPE, a photo- and thermal-crosslinkable group) for use in photonic waveguide devices. Thin films of CPE (approximately 0.5 microns thick) were spun onto fused silica substrates. Optical absorption in the thin films was evaluated both before and after exposure to UV radiation sources. It was found that the polyester exhibits two dominant UV absorption bands centered about 240 nm and 330 nm. Under exposure to 337 nm radiation (nitrogen laser) a marked bleaching of the 330 nm band was observed. This band bleaching is a direct result of the photo-induced crosslinking in the cinnamylindene malonate group. Exposure to 248 nm radiation (excimer laser), conversely, resulted in similar bleaching of the 330 nm band but was accompanied by nearly complete bleaching of the higher energy 240 nm band. Based on a Kramers-Kronig analysis of the absorption changes, refractive index changes on the order of {minus}10{sup {minus}2} are estimated. Confirmation of this calculation has been provided via ellipsometry which estimates a refractive index change at 632 nm of {minus}0.061 {+-} 0.002. Thus, the results of this investigation confirm the photosensitive potential of this type of material.

  3. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  4. Bismuth pyrochlore-based thin films for dielectric energy storage

    Science.gov (United States)

    Michael, Elizabeth K.

    The drive towards the miniaturization of electronic devices has created a need for dielectric materials with large energy storage densities. These materials, which are used in capacitors, are a critical component in many electrical systems. Here, the development of dielectric energy storage materials for pulsed power applications, which require materials with the ability to accumulate a large amount of energy and then deliver it to the system rapidly, is explored. The amount of electrostatic energy that can be stored by a material is a function of the induced polarization and the dielectric breakdown strength of the material. An ideal energy storage dielectric would possess a high relative permittivity, high dielectric breakdown strength, and low loss tangent under high applied electric fields. The bismuth pyrochlores are a compositionally tunable family of materials that meet these requirements. Thin films of cubic pyrochlore bismuth zinc niobate, bismuth zinc tantalate, and bismuth zinc niobate tantalate, were fabricated using a novel solution chemistry based upon the Pechini method. This solution preparation is advantageous because it avoids the use of teratogenic solvents, such as 2-methoxyethanol. Crystalline films fabricated using this solution chemistry had very small grains that were approximately 27 nm in lateral size and 35 nm through the film thickness. Impedance measurements found that the resistivity of the grain boundaries was two orders of magnitude higher than the resistivity of the grain interior. The presence of many resistive grain boundaries impeded conduction through the films, resulting in high breakdown strengths for these materials. In addition to high breakdown strengths, this family of materials exhibited moderate relative permittivities of between 55 +/- 2 and 145 +/- 5, for bismuth zinc tantalate and bismuth zinc niobate, respectively, and low loss tangents on the order of 0.0008 +/- 0.0001. Increases in the concentration of the tantalum

  5. Nanoscale chemical sensor based on organic thin-film transistors

    Science.gov (United States)

    Wang, Liang; Fine, Daniel; Dodabalapur, Ananth

    2004-12-01

    Nanoscale organic thin-film transistors were fabricated to investigate their chemical sensing properties. The use of a four-terminal geometry ensures that the sensor active area is truly nanoscale, and eliminates undesirable spreading currents. The sensor response was markedly different in nanoscale sensors compared to large-area sensors for the same analyte-semiconductor combination. The chemical sensing mechanisms in both microscale and nanoscale transistors are briefly discussed.

  6. An approach to conductometric immunosensor based on phthalocyanine thin film.

    Science.gov (United States)

    Sergeyeva, T A; Lavrik, N V; Rachkov, A E; Kazantseva, Z I; El'skaya, A V

    1998-03-01

    A new approach to conductometric biosensors utilizing iodine-sensitive phthalocyanine thin films has been proposed. The excellent sensitivity of the tetra-tert-butyl copper phthalocyanine (ttb-CuPc) to free iodine was used for the first time to detect a peroxidase-initiated reaction in an aqueous medium. To minimize the interfering effect of aqueous electrolytes on the impedance responses of the ttb-CuPc film itself, Au/Cr interdigitated planar electrodes bearing ttb-CuPc thin films were protected with hydrophobic gas-permeable membranes, namely thermally evaporated calixarene or plasma polymerized hexamethyldisiloxane films. Impedance spectroscopy data were analyzed in order to define the optimal operating frequency. An enzyme sensor with peroxidase immobilized in a cross-linked albumin matrix was tested. Its impedance responses were studied under variation of the substrate concentration, pH, ionic strength and buffer capacity. These results were used to define conditions for peroxidase-linked immunoassay in subsequent tests. With the developed sensor, concentrations of IgG in 0.2-2 micrograms/ml range were measured in a competitive mode with satisfactory accuracy. The detection of IgG in both test solutions and blood serum samples has been demonstrated.

  7. Nucleophilic stabilization of water-based reactive ink for titania-based thin film inkjet printing

    Science.gov (United States)

    Gadea, C.; Marani, D.; Esposito, V.

    2017-02-01

    Drop on demand deposition (DoD) of titanium oxide thin films (1, and chemical stability up to 600 h. Thin titanium oxide films (anatase phase is obtained after annealing at low temperature (ca. 400 °C).

  8. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  9. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  10. II-IV-V Based Thin Film Tandem Photovoltaic Cell

    Energy Technology Data Exchange (ETDEWEB)

    Newman, Nathan [Arizona State Univ., Mesa, AZ (United States); van Schilfgaarde, Mark [Arizona State Univ., Mesa, AZ (United States)

    2012-10-04

    [Through a combination of theory and experiment that, absent unknown mitigating factors, a tandem cell whose (wide-gap. 1.8 eV) top layer is made of ZnSnP2 and whose (narrow gap, 1.1 eV) bottom layer consisting of ZnGeAs2 are near-ideal materials for a tandem cell. Not only are there gaps optimally adjusted to the solar spectrum, but the two compounds are lattice-matched, and their energy band structure and optical absorption are also near-ideal (they closely resemble that of GaAs). Our first major challenge is to establish that high-quality II-IV-V thin films can be synthesized. We have begun growing and characterizing films of ZnGeAs2 and ZnSnP2, initially grown on Ge substrates (the lattice constant of Ge matches these compounds) by pulsed laser ablation and sputtering. In tandem are theoretical calculations to guide the experiments. The goal is to develop methods that can be used to produce a pair of lattice-matched thin films that will be useful in tandem cells.

  11. Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Repins, Ingrid L.; Kuciauskas, Darius

    2015-07-07

    A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

  12. Amorphous IZO-based transparent thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Paine, David C. [Division of Engineering, Brown University, Providence, RI 02912 (United States)], E-mail: David_Paine@Brown.edu; Yaglioglu, Burag; Beiley, Zach; Lee, Sunghwan [Division of Engineering, Brown University, Providence, RI 02912 (United States)

    2008-07-01

    Active electronics implemented on cheap flexible polymer substrates offer the promise of novel display technologies, wearable electronics, large area memory, and a multitude of other, as-yet-unthought-of applications that require low cost and high volume manufacturing. Thin film transistors (TFT's) fabricated on temperature-sensitive plastic substrates at low temperatures are the key to this technology. TFT's that use metal (In, Zn, Sn, Ga) oxide channels offer both high mobility (relative to amorphous Si) and the advantage of optical transparency in the visible regime. We report on the fabrication and performance of amorphous oxide transparent thin film transistors that use dc-magnetron sputter techniques to deposit IZO (In{sub 2}O{sub 3} - 10 wt.% ZnO) at low oxygen potential (0 vol.% O{sub 2}) for the source, drain, and gate-contact metallization and, at higher oxygen partial pressures (10 vol.% O{sub 2}), for the semi-conducting channel. The devices in this study were processed at room temperature except for a single 280 {sup o}C PECVD deposition step to deposit a 230 nm-thick SiO{sub x} gate dielectric. The devices are optically transparent and operate in depletion mode with a threshold voltage of - 5 V, mobility of 15 cm{sup 2}/V s, an on-off ratio of > 10{sup 6} and, a sub-threshold slope of 1.2 V/decade. In addition, we report persistent photo-conductivity in the channel region of these devices when exposed to UV illumination.

  13. New Fast Response Thin Film-Based Superconducting Quench Detectors

    CERN Document Server

    Dudarev, A; van de Camp, W; Ravaioli, E; Teixeira, A; ten Kate, H H J

    2014-01-01

    Quench detection on superconducting bus bars and other devices with a low normal zone propagation velocity and low voltage build-up is quite difficult with conventional quench detection techniques. Currently, on ATLAS superconducting bus bar sections, superconducting quench detectors (SQD) are mounted to detect quench events. A first version of the SQD essentially consists of an insulated superconducting wire glued to a superconducting bus line or windings, which in the case of a quench rapidly builds up a relatively high resistance that can be easily and quietly detected. We now introduce a new generation of drastically improved SQDs. The new version makes the detection of quenches simpler, more reliable, and much faster. Instead of a superconducting wire, now a superconducting thin film is used. The layout of the sensor shows a meander like pattern that is etched out of a copper coated 25 mu m thick film of Nb-Ti glued in between layers of Kapton. Since the sensor is now much smaller and thinner, it is easi...

  14. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.

    Science.gov (United States)

    Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Müller, Johannes; Kersch, Alfred; Schroeder, Uwe; Mikolajick, Thomas; Hwang, Cheol Seong

    2015-03-18

    The recent progress in ferroelectricity and antiferroelectricity in HfO2-based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3, BaTiO3, and SrBi2Ta2O9, which are considered to be feasible candidate materials for non-volatile semiconductor memory devices. However, these conventional ferroelectrics suffer from various problems including poor Si-compatibility, environmental issues related to Pb, large physical thickness, low resistance to hydrogen, and small bandgap. In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferro-electricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 μC cm(-2), and their coercive field (≈1-2 MV cm(-1)) is larger than conventional ferroelectric films by approximately one order of magnitude. Furthermore, they can be extremely thin (5 eV). These differences are believed to overcome the barriers of conventional ferroelectrics in memory applications, including ferroelectric field-effect-transistors and three-dimensional capacitors. Moreover, the coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors.

  15. Chiral atomically thin films

    Science.gov (United States)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  16. In situ X-ray diffraction based investigation of crystallization in solution deposited PZT thin films

    Science.gov (United States)

    Nittala, Krishna

    Solution deposited PZT based thin films have potential applications in embedded decoupling capacitors and pulse discharge capacitors. During solution deposition, precursor solution is deposited onto a substrate to obtain an amorphous film. The film is then crystallized by heating it at a high temperature (˜600 - 700°C). Conditions during the crystallization anneal such as precursor stoichiometry in solution, heating rate and adhesion layer in the substrate are known to influence phase and texture evolution in these films. However, a mechanistic understanding of the changes taking place in these thin films during crystallization is lacking. A better understanding of the crystallization processes in these thin films could enable tailoring the properties of thin films to suit specific applications. To explore the crystallization process in solution deposited PZT thin films, high temperature in situ laboratory and synchrotron X-ray diffraction based techniques were developed. Taking advantage of the high X-ray flux available at synchrotron facilities such as beamline 6-ID-B, Advanced Photon Source, Argonne National Laboratory, crystalline phases formed in the thin films during crystallization at the high heating rates (0.5 -- 60°C/s) typically used during film processing could be measured. Using a 2-D detector for these measurements allowed the simultaneous measurement of both phase and texture information during crystallization. Analytical treatment of the unconventional diffraction geometry used during the synchrotron based measurements was performed to develop methodologies for quantitative estimation of texture components. The nominal lead content in the starting solutions and the heating rate used during crystallization was observed to influence the sequence of phases formed during crystallization of the films. In films crystallized at fast heating rates, titanium segregation, probably due to diffusion of titanium from the adhesion layer, was observed. To

  17. Microstructures and electrical conductivity of nanocrystalline ceria-based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rupp, Jennifer L.M.; Gauckler, Ludwig J. [Institute of Nonmetallic Inorganic Materials, Department of Materials, Swiss Federal Institute of Technology, ETH Zurich, Wolfgang-Pauli-Str.10, CH-8093 Zurich (Switzerland)

    2006-10-31

    Ceria-based thin films are potential materials for use as gas-sensing layers and electrolytes in micro-solid oxide fuel cells. Since the average grain sizes of these films are on the nanocrystalline scale (<150 nm), it is of fundamental interest whether the electrical conductivity might differ from microcrystalline ceria-based ceramics. In this study, CeO{sub 2} and Ce{sub 0.8}Gd{sub 0.2}O{sub 1.9-x} thin films have been fabrication by spray pyrolysis and pulsed laser deposition, and the influence of the ambient average grain size on the total DC conductivity is investigated. Dense and crack-free CeO{sub 2} and Ce{sub 0.8}Gd{sub 0.2}O{sub 1.9-x} thin films were produced that withstand annealing up to temperatures of 1100 {sup o}C. The dopant concentration and annealing temperature affect highly the grain growth kinetics of ceria-based thin films. Large concentrations of dopant exert Zener drag on grain growth and result in retarded grain growth. An increased total DC conductivity and decreased activation energy was observed when the average grain size of a CeO{sub 2} or Ce{sub 0.8}Gd{sub 0.2}O{sub 1.9-x} thin film was decreased. (author)

  18. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  19. Optical characterization of antimony-based bismuth-doped thin films with different annealing temperatures

    Institute of Scientific and Technical Information of China (English)

    Xinmiao Lu; Yiqun Wu; Yang Wang; Jinsong Wei

    2011-01-01

    Antimony-b ased bismuth-doped thin film,a new kind of super-resolution mask layer,is prepared by magnetron sputtering.The structures and optical constants of the thin films before and after annealing are examined in detail.The as-deposited film is mainly in an amorphous state.After annealing at 170-370℃,it is converted to the rhombohedral-type of structure.The extent of crystallization increased with the annealing temperature.When the thin film is annealed,its refractive index decreased in the most visible region,whereas the extinction coefficient and reflectivity are markedly increased.The results indicate that the optical parameters of the film strongly depend on its microstructure and the bonding of the atoms.As demand for ultrahigh-density information storage continues to grow the recording mark size in optical memory is reduced to the nanometer scale [1- 4].Exceeding the optical diffraction limit with traditional optical storage technology has become a challenge[5-6].%Antimony-based bismuth-doped thin film, a new kind of super-resolution mask layer, is prepared by magnetron sputtering. The structures and optical constants of the thin films before and after annealing are examined in detail. The as-deposited film is mainly in an amorphous state. After annealing at 170-370℃, it is converted to the rhombohedral-type of structure. The extent of crystallization increased with the annealing temperature. When the thin film is annealed, its refractive index decreased in the most visible region, whereas the extinction coefficient and reflectivity are markedly increased. The results indicate that the optical parameters of the film strongly depend on its microstructure and the bonding of the atoms.

  20. Intense pulsed light treatment of cadmium telluride nanoparticle-based thin films.

    Science.gov (United States)

    Dharmadasa, Ruvini; Lavery, Brandon; Dharmadasa, I M; Druffel, Thad

    2014-04-09

    The search for low-cost growth techniques and processing methods for semiconductor thin films continues to be a growing area of research; particularly in photovoltaics. In this study, electrochemical deposition was used to grow CdTe nanoparticulate based thin films on conducting glass substrates. After material characterization, the films were thermally sintered using a rapid thermal annealing technique called intense pulsed light (IPL). IPL is an ultrafast technique which can reduce thermal processing times down to a few minutes, thereby cutting production times and increasing throughput. The pulses of light create localized heating lasting less than 1 ms, allowing films to be processed under atmospheric conditions, avoiding the need for inert or vacuum environments. For the first time, we report the use of IPL treatment on CdTe thin films. X-ray diffraction (XRD), optical absorption spectroscopy (UV-Vis), scanning electron microscopy (SEM) and room temperature photoluminescence (PL) were used to study the effects of the IPL processing parameters on the CdTe films. The results found that optimum recrystallization and a decrease in defects occurred when pulses of light with an energy density of 21.6 J cm(-2) were applied. SEM images also show a unique feature of IPL treatment: the formation of a continuous melted layer of CdTe, removing holes and voids from a nanoparticle-based thin film.

  1. Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

    KAUST Repository

    Hussain, Aftab M.

    2013-08-16

    We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Tunable electrical conductivity in oriented thin films of tetrathiafulvalene-based covalent organic framework

    Energy Technology Data Exchange (ETDEWEB)

    Cai, SL; Zhang, YB; Pun, AB; He, B; Yang, JH; Toma, FM; Sharp, ID; Yaghi, OM; Fan, J; Zheng, SR; Zhang, WG; Liu, Y

    2014-09-16

    Despite the high charge-carrier mobility in covalent organic frameworks (COFs), the low intrinsic conductivity and poor solution processability still impose a great challenge for their applications in flexible electronics. We report the growth of oriented thin films of a tetrathiafulvalene-based COF (TTF-COF) and its tunable doping. The porous structure of the crystalline TTF-COF thin film allows the diffusion of dopants such as I-2 and tetracyanoquinodimethane (TCNQ) for redox reactions, while the closely packed 2D grid sheets facilitate the cross-layer delocalization of thus-formed TTF radical cations to generate more conductive mixed-valence TTF species, as is verified by UV-vis-NIR and electron paramagnetic resonance spectra. Conductivity as high as 0.28 S m(-1) is observed for the doped COF thin films, which is three orders of magnitude higher than that of the pristine film and is among the highest for COF materials.

  3. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  4. Biocompatibility evaluation of sputtered zirconium-based thin film metallic glass-coated steels

    Directory of Open Access Journals (Sweden)

    Subramanian B

    2015-10-01

    Full Text Available Balasubramanian Subramanian,1 Sundaram Maruthamuthu,2 Senthilperumal Thanka Rajan1 1Electrochemical Material Science Division, 2Corrosion and Materials Protection Division, Central Electrochemical Research Institute, Karaikudi, India Abstract: Thin film metallic glasses comprised of Zr48Cu36Al8Ag8 (at.% of approximately 1.5 µm and 3 µm in thickness were prepared using magnetron sputtering onto medical grade 316L stainless steel. Their structural and mechanical properties, in vitro corrosion, and antimicrobial activity were analyzed. The amorphous thin film metallic glasses consisted of a single glassy phase, with an absence of any detectable peaks corresponding to crystalline phases. Elemental composition close to the target alloy was noted from EDAX analysis of the thin film. The surface morphology of the film showed a smooth surface on scanning electron microscopy and atomic force microscopy. In vitro electrochemical corrosion studies indicated that the zirconium-based metallic glass could withstand body fluid, showing superior resistance to corrosion and electrochemical stability. Interactions between the coated surface and bacteria were investigated by agar diffusion, solution suspension, and wet interfacial contact methods. The results indicated a clear zone of inhibition against the growth of microorganisms such as Escherichia coli and Staphylococcus aureus, confirming the antimicrobial activity of the thin film metallic glasses. Cytotoxicity studies using L929 fibroblast cells showed these coatings to be noncytotoxic in nature. Keywords: thin film metallic glasses, sputtering, biocompatibility, corrosion, antimicrobial activity

  5. Optical band gap tuning of Sb-Se thin films for xerographic based applications

    Science.gov (United States)

    Kaur, Ramandeep; Singh, Palwinder; Singh, Kulwinder; Kumar, Akshay; Thakur, Anup

    2016-10-01

    In the present paper we have studied the effect of Sb addition on the optical band gap tuning of thermally evaporated SbxSe100-x (x = 0, 5, 20, 50 and 60) thin films. The structural investigations revealed that all thin films were amorphous in nature. Transmission spectrum was taken in the range 400-2500 nm shows that all films are highly transparent in the near infrared region. The fundamental absorption edge shifts towards longer wavelength with Sb incorporation. The optical band gap decreases with addition of antimony in a-Se thin films. A good correlation has been drawn between experimentally estimated and theoretically calculated optical band gap. The decrease in optical band gap of thin films has been explained using chemical bond approach and density of states model. Decrease in optical band gap with Sb addition increases the concentration of electron deep traps which increases the X-ray sensitivity of Sb-Se thin films. Thus by tuning the optical band gap of Sb-Se alloy, it could be utilized for xerographic based applications.

  6. Perpendicular Magnetic Anisotropy in Co-Based Full Heusler Alloy Thin Films

    Science.gov (United States)

    Wu, Y.; Xu, X. G.; Miao, J.; Jiang, Y.

    2015-12-01

    Half-metallic Co-based full Heusler alloys have been qualified as promising functional materials in spintronic devices due to their high spin polarization. The lack of perpendicular magnetic anisotropy (PMA) is one of the biggest obstacles restricting their application in next generation ultrahigh density storage such as magnetic random access memory (MARM). How to induce the PMA in Co-based full Heusler alloy thin films has attracted much research interest of scientists. This paper presents an overview of recent progress in this research area. We hope that this paper would provide some guidance and ideas to develop highly spin-polarized Co-based Heusler alloy thin films with PMA.

  7. PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells

    Science.gov (United States)

    Yu, Wonjong; Cho, Gu Young; Hong, Soonwook; Lee, Yeageun; Kim, Young Beom; An, Jihwan; Cha, Suk Won

    2016-10-01

    Yttria-stabilized zirconia (YSZ) thin film electrolyte deposited by plasma enhanced atomic layer deposition (PEALD) was investigated. PEALD YSZ-based bi-layered thin film electrolyte was employed for thin film solid oxide fuel cells on nanoporous anodic aluminum oxide substrates, whose electrochemical performance was compared to the cell with sputtered YSZ-based electrolyte. The cell with PEALD YSZ electrolyte showed higher open circuit voltage (OCV) of 1.0 V and peak power density of 182 mW cm-2 at 450 °C compared to the one with sputtered YSZ electrolyte(0.88 V(OCV), 70 mW cm-2(peak power density)). High OCV and high power density of the cell with PEALD YSZ-based electrolyte is due to the reduction in ohmic and activation losses as well as the gas and electrical current tightness.

  8. Development of Low-cost Chemical and Micromechanical Sensors Based on Thick-film,Thin-film and Electroplated Films

    Institute of Scientific and Technical Information of China (English)

    Wenmin Qu; Kurt Drescher

    2000-01-01

    Various films could be used as sensing materials or as constructional materials for the fabrication of chemical and micromechanical sensors. To illustrate this potential, three sensors fabricated by very different film deposition technologies are given as examples. The sensors are a humidity sensor in thickfilm technology, a multi-functional gas sensor in thin-film technology and a three-dimensional acceleration sensor chip manufactured by electroplating techniques. Design, fabrication and characterisation of these sensors are described in this paper.

  9. Flexible fluidic microchips based on thermoformed and locally modified thin polymer films.

    Science.gov (United States)

    Truckenmüller, R; Giselbrecht, S; van Blitterswijk, C; Dambrowsky, N; Gottwald, E; Mappes, T; Rolletschek, A; Saile, V; Trautmann, C; Weibezahn, K-F; Welle, A

    2008-09-01

    This paper presents a fundamentally new approach for the manufacturing and the possible applications of lab on a chip devices, mainly in the form of disposable fluidic microchips for life sciences applications. The new technology approach is based on a novel microscale thermoforming of thin polymer films as core process. The flexibility not only of the semi-finished but partly also of the finished products in the form of film chips could enable future reel to reel processes in production but also in application. The central so-called 'microthermoforming' process can be surrounded by pairs of associated pre- and postprocesses for micro- and nanopatterned surface and bulk modification or functionalisation of the formed films. This new approach of microscale thermoforming of thin polymer film substrates overlaid with a split local modification of the films is called 'SMART', which stands for 'substrate modification and replication by thermoforming'. In the process, still on the unformed, plane film, the material modifications of the preprocess define the locations where later, then on the spatially formed film, the postprocess generates the final local modifications. So, one can obtain highly resolved modification patterns also on hardly accessible side walls and even behind undercuts. As a first application of the new technology, we present a flexible chip-sized scaffold for three dimensional cell cultivation in the form of a microcontainer array. The spatially warped container walls have been provided with micropores, cell adhesion micropatterns and thin film microelectrodes.

  10. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  11. Airflow energy harvesters of metal-based PZT thin films by self-excited vibration

    Science.gov (United States)

    Suwa, E.; Tsujiura, Y.; Kurokawa, F.; Hida, H.; Kanno, I.

    2014-11-01

    We developed self-excited vibration energy harvesters of Pb(Zr,Ti)O3 (PZT) thin films using airflow. To enhance the self-excited vibration, we used 30-μm-thick stainless steel (SS304) foils as base cantilevers on which PZT thin films were deposited by rf-magnetron sputtering. To compensate for the initial bending of PZT/SS304 unimorph cantilever due to the thermal stress, we deposited counter PZT thin films on the back of the SS304 cantilever. We evaluated power-generation performance and vibration mode of the energy harvester in the airflow. When the angle of attack (AOA) was 20° to 30°, large vibration was generated at wind speeds over 8 m/s. By FFT analysis, we confirmed that stable self-excited vibration was generated. At the AOA of 30°, the output power reached 19 μW at wind speeds of 12 m/s.

  12. Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

    OpenAIRE

    Yurchuk, Ekaterina

    2015-01-01

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films ...

  13. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  14. Zinc oxide-based thin film functional layers for chemiresistive sensors

    Energy Technology Data Exchange (ETDEWEB)

    Miller, James B.; Ashok, Tejasvi; Lee, Sojung; Broitman, Esteban

    2012-08-31

    Sol-gel wet-chemical techniques were used to prepare ZnO, Al-ZnO (Al:Zn = 1:10 mol/mol) and Cu-ZnO (Cu:Zn = 1:10 mol/mol) thin films for characterization as functional layers for chemiresistive oxygen sensors. Cu and Al minor components influence the ZnO films' topography and their thermally induced chemical and structural evolution. As prepared (room temperature) films have the structure of layered basic zinc acetate, a lamellar ZnO precursor. Upon annealing at temperatures through 973 K, the films display similar chemical evolution patterns-temperatures above 773 K are needed to completely desorb solvents and decompose precursors. Cu facilitates c-axis orientation of the film as its structure matures, while Al slows its crystallization. Chemiresistive sensors, fabricated by coating thin film functional layers onto interdigitated electrode (IDE) transducers, were evaluated for their responses to oxygen at operating temperatures through 873 K. A ZnO/IDE sensor displays high sensitivity for O{sub 2} at an intermediate temperature, 673 K, reflecting an optimal balance between surface O{sub 2} coverage and carrier availability. At 1:10 mol/mol Cu:Zn and Al:Zn, the developing ZnO structure cannot accommodate all minor component atoms. Surplus atoms accumulate in independent phases at grain boundaries, contributing to both high base resistances (in N{sub 2}) and low sensitivity to oxygen. - Highlights: Black-Right-Pointing-Pointer Cu modification of a ZnO thin film improves c-axis alignment. Black-Right-Pointing-Pointer Al modification of ZnO thin film delays crystallization. Black-Right-Pointing-Pointer At 1:10 mol/mol Zn, the ZnO structure cannot accommodate all Cu or Al atoms. Black-Right-Pointing-Pointer Excess modifier causes high film resistance and low sensitivity as O{sub 2} sensors.

  15. Multifunctional thin film surface

    Energy Technology Data Exchange (ETDEWEB)

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  16. Excimer-like electroluminescence from thin films of switchable supermolecular anthracene-based rotaxanes

    NARCIS (Netherlands)

    Giro, G.; Cocchi, M.; Fattori, V.; Gadret, G.; Ruani, G.; Murgia, M.; Cavallini, M.; Biscarini, F.; Zamboni, R.; Loontjens, T.; Thies, J.; Leigh, D.A.; Morales, A.F.

    2001-01-01

    Thin films of 10-[3,5-di(terbutyl)phenoxy]decyl-2-({2-[(9-anthrylcarbonyl)amino]acetyl}amino) acetate (ANTPEP), the thread of an anthracene-based rotaxane, have been processed by the spin coating technique in a polycarbonate (PC) matrix. A single layer organic light emitting diode (OLED) has been de

  17. Inverted nanocone-based thin film photovoltaics with omnidirectionally enhanced performance.

    Science.gov (United States)

    Lin, Qingfeng; Leung, Siu-Fung; Lu, Linfeng; Chen, Xiaoyuan; Chen, Zhuo; Tang, Haoning; Su, Wenjun; Li, Dongdong; Fan, Zhiyong

    2014-06-24

    Thin film photovoltaic (PV) technologies are highly attractive for low-cost solar energy conversion and possess a wide range of potential applications from building-integrated PV generation to portable power sources. Inverted nanocones (i-cones) have been demonstrated as a promising structure for practical thin film PV devices/modules, owning to their antireflection effect, self-cleaning function, superior mechanical robustness, and so forth. In this work, we have demonstrated a low-cost and scalable approach to achieve perfectly ordered i-cone arrays. Thereafter, thin film amorphous silicon (a-Si:H) solar cells have been fabricated based on various i-cone substrates with different aspect ratios and pitches to investigate the impact of geometry of i-cone nanostructures on the performance of the as-obtained PV devices. Intriguingly, the optical property investigations and device performance characterizations demonstrated that the 0.5-aspect-ratio i-cone-based device performed the best on both light absorption capability and energy conversion efficiency, which is 34% higher than that of the flat counterpart. Moreover, the i-cone-based device enhanced the light absorption and device performance over the flat reference device omnidirectionally. These results demonstrate a viable and convenient route toward scalable fabrication of nanostructures for high-performance thin film PV devices based on a broad range of materials.

  18. PHOTORESPONSIVE BEHAVIOR OF AZOBENZENE-BASED (METH)ACRYLIC (CO)POLYMERS IN THIN-FILMS

    NARCIS (Netherlands)

    HAITJEMA, HJ; VONMORGEN, GL; TAN, YY; CHALLA, G

    1994-01-01

    The reversible photoisomerization and the thermal isomerization of azobenzene-based (Az.b.) groups covalently bound to (meth)acrylic (co)polymers were investigated in thin films. For the amorphous polymers it was found that a broad range of the thermal cis --> trans isomerization rates could be obta

  19. High Power Storage System Based on Thin Film Solid Ionics.

    Science.gov (United States)

    1988-02-01

    1.8V. The redox stability range has been determined by cyclic voltametry for different preparation conditions of the films. Lithium solid state hybrid...linear sweep voltametry (LSV) technique (Dahn and Hearing, 1981). We observe that in non-annealed film the peak at 1.2 V Is very strong compared to that

  20. Comparison of photovoltaic performance of TiO2 nanoparticles based thin films via different routes

    Science.gov (United States)

    Ji, Yajun

    2015-11-01

    Well crystallized TiO2 nanoparticles were prepared by hydrothermal and sol-gel routes, respectively. The morphologies, structures, crystallinity and optical properties of resulted TiO2 nanoparticles-based thin films via the two methods were examined by field emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM), X-ray diffractometer (XRD) and reflectance spectra. In addition, comparison of photovoltaic performance of TiO2 nanoparticles-based thin films by the two methods was performed. It is found that the maximum energy conversion efficiency of 4.06% was achieved based on the obtained electrode via hydrothermal, which is much better than that of the sol-gels route. The uniform film structure with improved dye absorption capability, increased diffused reflectance property and relatively low charge recombination rates for injected electrons are believed to be responsible to the superior photoelectrochemical properties of dye-sensitized solar cells (DSSC) via hydrothermal route.

  1. Fabrication of semi-transparent superoleophobic thin film from fabrics and nanoparticle-based hierarchical structure

    Directory of Open Access Journals (Sweden)

    Nishizawa S.

    2013-08-01

    Full Text Available Superoleophobic thin films have many potential applications including fluid transfer, fluid power systems, stain resistant and antifouling materials, and microfluidics among others. Transparency is also desired with superhydrophobicity for their numerous applications; however transparency and oleophobicity are almost incompatible relationship with each other in the point of surface structure. Because oleophobicity required rougher structure at nano-micro scale than hydrophobicity, and these rough structure brings light scattering. So far, there is very few report of the compatible of transparency and superoleophobicity. In this report, we proposed the see-through type fabrics using the nanoparticle-based hierarchical structure thin film for improving both of oleophobicity and transparency. The vacant space between fibrils of fabrics has two important roles: the one is to through the light, another one is to introduce air layer to realize Cassie state of liquid droplet on thin film. To realize the low surface energy and nanoscale rough structure surface on fibrils, we used the spray method with perfluoroalkyl methacrylic copolymer (PMC, silica nano particles and volatile solvent. From the SEM image, the hierarchical structures of nanoparticle were formed uniformly on the fabrics. The transparency of thin film obtained was approximately 61% and the change of transparency between pre-coated fabrics and coated was 11%. From investigation of the surface wettability, the contact angles of oils (rapeseed oil and hexadecane and water droplet on the fabricated film were over 150 degree.

  2. Nonlinear optical thin films

    Science.gov (United States)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  3. Sputtered Zn(O,S) for junction formation in chalcopyrite-based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Grimm, A.; Just, J.; Kieven, D.; Lauermann, I.; Rissom, T.; Klenk, R. [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Berlin (Germany); Palm, J. [AVANCIS GmbH and Co. KG, Munich (Germany); Neisser, A. [Sulfurcell Solartechnik GmbH, Berlin (Germany)

    2010-06-15

    In an effort to eliminate the standard CdS buffer layer from chalcopyrite-based thin film solar cells we have investigated sputtered Zn(O,S) films. They were prepared by partially reactive sputtering from a ZnS target in an argon/oxygen mixture. Single phase, polycrystalline films were achieved for substrate temperatures of at least 100 C. Test devices prepared in a completely dry process showed superior blue response and active area conversion efficiencies up to 13.7%. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Alkynyl-ruthenium based azo-organometallics: Thermal evolution of thin films microstructure

    Science.gov (United States)

    Niziol, Jacek; Fillaut, Jean-Luc; Sniechowski, Maciek; Khammar, Farida; Sahraoui, Bouchta

    2012-08-01

    Alkynyl-ruthenium based azo-organometallics were studied in form of powders and thin layers obtained by conventional spin coating from solution. X-ray diffractometry revealed partly crystalline structure of powders while corresponding films were amorphous. Next, the films were subjected to a programmed heating and cooling. Meanwhile, their optical properties were monitored in situ using spectroscopic ellipsometry. It was found that upon thermic treatment films spontaneously adopted a crystalline structure, different from previously observed in the case of starting powders. This structure depended on chemical composition of a particular alkynyl-ruthenium compound.

  5. Structure and physicochemical properties of thin film photosemiconductor cells based on porphine derivatives

    Science.gov (United States)

    Kazak, A. V.; Usol'tseva, N. V.; Smirnova, A. I.; Bodnarchuk, V. V.; Sul'yanov, S. N.; Yablonskii, S. V.

    2016-05-01

    Photosemiconductor thin films based on two organic porphine derivatives have been investigated. These compounds have different pendent groups; the film morphology, along with the specific fabrication technique, is determined to a great extent by these groups. The films have been fabricated by vacuum sputtering and using the Langmuir-Schaefer method. According to the atomic force microscopy (AFM) data, the Langmuir-Schaefer films are more homogeneous than the sputtered ones. It is shown that the sputtered films based on substituted porphine have a looser stacking than the initial analog. A spectroscopy study revealed a bathochromic shift of the Soret band in the Langmuir-Schaefer films-sputtered films series. This shift is explained by the increase in the concentration and size of molecular aggregates in sputtered films. It is shown that a polycrystalline C60 fullerene film deposited onto an amorphous substituted porphine layer improves the photoelectric characteristics of the latter. Both the time stability of the photodiode structure and its ampere‒watt sensitivity increase (by a factor of 10 in the transition regime). The steady-state current does not change. The effect of polarity reversal of the photovoltaic signal is observed in a planar C60‒substituted metalloporphine heterostructure, which is similar to the pyroelectric effect. The polarity reversal can be explained by the contribution of the trap charge and discharge current at the interface between the amorphous photosemiconductor and crystalline photosemiconductor to the resulting photoelectric current.

  6. Surface segregation in TiO2-based nanocomposite thin films

    Science.gov (United States)

    Sai Kiran Chakravadhanula, Venkata; Kübel, Christian; Hrkac, Tomislav; Zaporojtchenko, Vladimir; Strunskus, Thomas; Faupel, Franz; Kienle, Lorenz

    2012-12-01

    The morphology of nanocomposites plays a pivotal role in understanding their functionality and determines their capabilities for applications. The use of nanocomposite coatings requires a study of the size effects on their functional properties. Noble metal nanoparticles are promising candidates for nanocomposite thin film applications due to their antibacterial, plasmonic and photocatalytic properties. In this contribution, the morphology of Ag-TiO2 and Au-TiO2 nanocomposite thin films has been investigated experimentally using electron tomography in transmission electron microscopy in combination with UV/vis spectroscopy. Based on the additional 3D information obtained from tomography, we propose a two-step model towards the observed bimodal particle size in these nanocomposite thin films prepared by co-sputtering from two different sources. Furthermore, we show that the optical properties exhibit a well-defined relation with the morphology of the nanocomposite thin films. The present investigations demonstrate the potential of electron tomography for revealing the complex structure and formation processes of functional nanocomposites.

  7. Progress in Thin Film Solar Cells Based on Cu2ZnSnS4

    Directory of Open Access Journals (Sweden)

    Hongxia Wang

    2011-01-01

    Full Text Available The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,GaSe2 (CIGS in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4 (CZTS semiconductor material has emerged as one of the most promising candidates for this aim and has attracted considerable interest recently. Significant progress in this relatively new research area has been achieved in the last three years. Over 130 papers on CZTS have been published since 2007, and the majority of them are on the preparation of CZTS thin films by different methods. This paper, will review the wide range of techniques that have been used to deposit CZTS semiconductor thin films. The performance of the thin film solar cells using the CZTS material will also be discussed.

  8. Microstructural and Electrical Characterization of Barium Strontium Titanate-Based Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

    Science.gov (United States)

    2003-04-03

    Strontium Titanate-Based Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition DISTRIBUTION: Approved for public...Society H2.4 Microstructural and Electrical Characterization of Barium Strontium Titanate- based Solid Solution Thin Films Deposited on Ceramic...investigated and report the microstructural and electrical characterization of selected barium strontium titanate-based solid solution thin films

  9. Electrodeposition-Based Fabrication and Characteristics of Tungsten Trioxide Thin Film

    OpenAIRE

    Li Lin; Chin-Pao Cheng; Tun-Ping Teng

    2016-01-01

    In this study, tungsten trioxide (WO3) thin films were electrodeposited on indium tin oxide (ITO) glass to form WO3-coated glass. The electrodeposition (ED) time (tED) and ED current (IED) were varied to control the film thickness and morphology. Furthermore, the crystallization of the thin films was controlled by annealing them at 250°C, 500°C, and 700°C. The results showed that the thickness of the WO3 thin films increased with tED and IED. The as-deposited thin films and those annealed at ...

  10. Design optimization of thin-film/wafer-based tandem junction solar cells using analytical modeling

    Science.gov (United States)

    Davidson, Lauren; Toor, Fatima

    2016-03-01

    Several research groups are developing solar cells of varying designs and materials that are high efficiency as well as cost competitive with the single junction silicon (Si) solar cells commercially produced today. One of these solar cell designs is a tandem junction solar cell comprised of perovskite (CH3NH3PbI3) and silicon (Si). Loper et al.1 was able to create a 13.4% efficient tandem cell using a perovskite top cell and a Si bottom cell, and researchers are confident that the perovskite/Si tandem cell can be optimized in order to reach higher efficiencies without introducing expensive manufacturing processes. However, there are currently no commercially available software capable of modeling a tandem cell that is based on a thin-film based bottom cell and a wafer-based top cell. While PC1D2 and SCAPS3 are able to model tandem cells comprised solely of thin-film absorbers or solely of wafer-based absorbers, they result in convergence errors if a thin-film/wafer-based tandem cell, such as the perovskite/ Si cell, is modeled. The Matlab-based analytical model presented in this work is capable of modeling a thin-film/wafer-based tandem solar cell. The model allows a user to adjust the top and bottom cell parameters, such as reflectivity, material bandgaps, donor and acceptor densities, and material thicknesses, in order to optimize the short circuit current, open circuit voltage, and quantum efficiency of the tandem solar cell. Using the Matlab-based analytical model, we were able optimize a perovskite/Si tandem cell with an efficiency greater than 30%.

  11. Copper Oxide Thin Films through Solution Based Methods for Electrical Energy Conversion and Storage

    Science.gov (United States)

    Zhu, Changqiong

    Copper oxides (Cu2O and CuO), composed of non-toxic and earth abundant elements, are promising materials for electrical energy generation and storage devices. Solution based techniques for creating thin films of these materials, such as electrodeposition, are important to understand and develop because of their potential for realizing substantial energy savings compared to traditional fabrication methods. Cuprous oxide (Cu2O), with its direct band gap, is a p-type semiconductor that is well suited for creating solution-processed photovoltaic devices (solar cells); several key advancements made toward this application are the primary focus of this thesis. Electrodeposition of single-phase, crystalline Cu2O thin films is demonstrated using previously unexplored, acidic lactate/Cu2+ solutions, which has provided additional understanding of the impacts of growth solution chemistry on film formation. The influence of pH on the resulting Cu2O thin film properties is revealed by using the same ligand (sodium lactate) at various solution pH values. Cu2O films grown from acidic lactate solutions can exhibit a distinctive flowerlike, dendritic morphology, in contrast to the faceted, dense films obtained using alkaline lactate solutions. Relative speciation distributions of the various metal complex ions present under different growth conditions are calculated using reported equilibrium association constants and experimentally supported by UV-Visible absorption spectroscopy. Dependence of thin film morphology on the lactate/Cu2+ molar ratio and applied potential is described. Cu2O/eutectic gallium-indium Schottky junction devices are formed and devices are tested under monochromatic green LED illumination. Further surface examination of the Cu2O films using X-ray photoelectron spectroscopy (XPS) reveals the fact that films grown from acidic lactate solution with a small lactate/Cu2+ molar ratio, which exhibit improved photovoltaic performance compared to films grown from

  12. Magnetic Properties of FeNi-Based Thin Film Materials with Different Additives

    Directory of Open Access Journals (Sweden)

    Cai Liang

    2014-07-01

    Full Text Available This paper presents a study of FeNi-based thin film materials deposited with Mo, Al and B using a co-sputtering process. The existence of soft magnetic properties in combination with strong magneto-mechanical coupling makes these materials attractive for sensor applications. Our findings show that FeNi deposited with Mo or Al yields magnetically soft materials and that depositing with B further increases the softness. The out-of-plane magnetic anisotropy of FeNi thin films is reduced by depositing with Al and completely removed by depositing with B. The effect of depositing with Mo is dependent on the Mo concentration. The coercivity of FeNiMo and FeNiAl is reduced to less than a half of that of FeNi, and a value as low as 40 A/m is obtained for FeNiB. The surfaces of the obtained FeNiMo, FeNiAl and FeNiB thin films reveal very different morphologies. The surface of FeNiMo shows nano-cracks, while the FeNiAl films show large clusters and fewer nano-cracks. When FeNi is deposited with B, a very smooth morphology is obtained. The crystal structure of FeNiMo strongly depends on the depositant concentration and changes into an amorphous structure at a higher Mo level. FeNiAl thin films remain polycrystalline, even at a very high concentration of Al, and FeNiB films are amorphous, even at a very low concentration of B.

  13. Magnetic properties of FeNi-based thin film materials with different additives

    KAUST Repository

    Liang, C.

    2014-07-04

    This paper presents a study of FeNi-based thin film materials deposited with Mo, Al and B using a co-sputtering process. The existence of soft magnetic properties in combination with strong magneto-mechanical coupling makes these materials attractive for sensor applications. Our findings show that FeNi deposited with Mo or Al yields magnetically soft materials and that depositing with B further increases the softness. The out-of-plane magnetic anisotropy of FeNi thin films is reduced by depositing with Al and completely removed by depositing with B. The effect of depositing with Mo is dependent on the Mo concentration. The coercivity of FeNiMo and FeNiAl is reduced to less than a half of that of FeNi, and a value as low as 40 A/m is obtained for FeNiB. The surfaces of the obtained FeNiMo, FeNiAl and FeNiB thin films reveal very different morphologies. The surface of FeNiMo shows nano-cracks, while the FeNiAl films show large clusters and fewer nano-cracks. When FeNi is deposited with B, a very smooth morphology is obtained. The crystal structure of FeNiMo strongly depends on the depositant concentration and changes into an amorphous structure at a higher Mo level. FeNiAl thin films remain polycrystalline, even at a very high concentration of Al, and FeNiB films are amorphous, even at a very low concentration of B. 2014 by the authors.

  14. Thin film superfluid optomechanics

    CERN Document Server

    Baker, Christopher G; McAuslan, David L; Sachkou, Yauhen; He, Xin; Bowen, Warwick P

    2016-01-01

    Excitations in superfluid helium represent attractive mechanical degrees of freedom for cavity optomechanics schemes. Here we numerically and analytically investigate the properties of optomechanical resonators formed by thin films of superfluid $^4$He covering micrometer-scale whispering gallery mode cavities. We predict that through proper optimization of the interaction between film and optical field, large optomechanical coupling rates $g_0>2\\pi \\times 100$ kHz and single photon cooperativities $C_0>10$ are achievable. Our analytical model reveals the unconventional behaviour of these thin films, such as thicker and heavier films exhibiting smaller effective mass and larger zero point motion. The optomechanical system outlined here provides access to unusual regimes such as $g_0>\\Omega_M$ and opens the prospect of laser cooling a liquid into its quantum ground state.

  15. Biomimetic thin film deposition

    Science.gov (United States)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  16. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  17. Radar absorbing materials based on titanium thin film obtained by sputtering technique

    Directory of Open Access Journals (Sweden)

    Viviane Lilian Soethe

    2011-09-01

    Full Text Available Titanium thin films with nanometer thicknesses were deposited on polyethylene terephthalate (PET substrate using the triode magnetron sputtering technique. It was observed that the titanium thin film-polymeric substrate set attenuates the energy of the incident electromagnetic wave in the frequency range of 8 to 12 GHz. This result allows to consider this set as a radar absorbing material, which may be employed in automobile, telecommunication, aerospace, medical, and electroelectronic areas. Results of the reflectivity show that the attenuation depends on the thin film thickness, as a determining factor. Thin films with 25 to 100 nm thickness values show attenuation of the electromagnetic wave energy from around 20 to 50%. Analyses by Rutherford backscattering spectrometry provided information about the thickness of the thin films studied. Hall effect analyses contributed to better understand the influence of the thin film thickness on the electron mobility and consequently on absorption properties.

  18. Determining the elastic modulus of thin films using a buckling-based method: computational study

    Energy Technology Data Exchange (ETDEWEB)

    Zheng Xiupeng; Cao Yanping; Li Bo; Feng Xiqiao [AML, Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China); Jiang Hanqing [Department of Mechanical and Aerospace Engineering, Arizona State University, Tempe, AZ 85287 (United States); Huang, Yonggang Y, E-mail: caoyanping@tsinghua.edu.c, E-mail: fengxq@tsinghua.edu.c [Department of Mechanical Engineering, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208 (United States)

    2009-09-07

    The buckling mode of a thin film lying on a soft substrate has been used to determine the elastic modulus of thin films and one-dimensional objects (e.g. nanowires and nanotubes). In this paper, dimensional analysis and three-dimensional nonlinear finite element computations have been made to investigate the buckling of a film with finite width bonded to a compliant substrate. Our study demonstrates that the effect of Poisson's ratio of the film can be neglected when its width-thickness ratio is smaller than 20. For wider films, omitting the influence of Poisson's ratio may lead to a significant systematic error in the measurement of the Young's modulus and, therefore, the film should be treated as a plate. It is also found that the assumption of the uniform interfacial normal stress along the width of the film made in the theoretical analysis does not cause an evident error, even when its width is comparable to its thickness. Based on the computational results, we further present a simple expression to correlate the buckling wavelength with the width and thickness of the film and the material properties (Young's moduli and Poisson's ratios) of the film and substrate, which has a similar form to that in the classical plane-strain problem. The fundamental solutions reported here are not only very accurate in a broad range of geometric and material parameters but also convenient for practical use since they do not involve any complex calculation.

  19. Superconducting detector of IR single-photons based on thin WSi films

    CERN Document Server

    Seleznev, V A; Vakhtomin, Yu B; Morozov, P V; Zolotov, P I; Vasilev, D D; Moiseev, K M; Malevannaya, E I; Smirnov, K V

    2016-01-01

    We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7K ) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors SDE (system detection efficiency) with increasing bias current (Ib) reaches a constant value of ~30% (for 1550 nm) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>=0.6Ic. The minimal dark counts level (DC) made 1 s^-1 limited with ba...

  20. Thin films for material engineering

    Science.gov (United States)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  1. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  2. Robust thin-film generator based on segmented contact-electrification for harvesting wind energy.

    Science.gov (United States)

    Meng, Xian Song; Zhu, Guang; Wang, Zhong Lin

    2014-06-11

    Collecting and converting energy from ambient air flow promise to be a viable approach in developing self-powered autonomous electronics. Here, we report an effective and robust triboelectric generator that consists of an undulating thin-film membrane and an array of segmented fine-sized electrode pairs on a single substrate. Sequential processes of contact electrification and electrostatic induction generate alternating flows of free electrons when the membrane interacts with ambient air flow. Based on an optimum rational design, the segmented electrodes play an essential role in boosting the output current, leading to an enhancement of over 500% compared to the structure without the segmentation. The thin-film based generator can simultaneously and continuously light up tens of commercial light-emitting diodes. Moreover, it possesses exceptional durability, providing constant electric output after millions of operation cycles. This work offers a truly practical solution that opens the avenue to take advantage of wind energy by using the triboelectric effect.

  3. Recent progress in high-mobility thin-film transistors based on multilayer 2D materials

    Science.gov (United States)

    Hong, Young Ki; Liu, Na; Yin, Demin; Hong, Seongin; Kim, Dong Hak; Kim, Sunkook; Choi, Woong; Yoon, Youngki

    2017-04-01

    Two-dimensional (2D) layered semiconductors are emerging as promising candidates for next-generation thin-film electronics because of their high mobility, relatively large bandgap, low-power switching, and the availability of large-area growth methods. Thin-film transistors (TFTs) based on multilayer transition metal dichalcogenides or black phosphorus offer unique opportunities for next-generation electronic and optoelectronic devices. Here, we review recent progress in high-mobility transistors based on multilayer 2D semiconductors. We describe the theoretical background on characterizing methods of TFT performance and material properties, followed by their applications in flexible, transparent, and optoelectronic devices. Finally, we highlight some of the methods used in metal-semiconductor contacts, hybrid structures, heterostructures, and chemical doping to improve device performance.

  4. MAPLE-based method to obtain biodegradable hybrid polymeric thin films with embedded antitumoral agents.

    Science.gov (United States)

    Dinca, Valentina; Florian, Paula E; Sima, Livia E; Rusen, Laurentiu; Constantinescu, Catalin; Evans, Robert W; Dinescu, Maria; Roseanu, Anca

    2014-02-01

    In this work, antitumor compounds, lactoferrin [recombinant iron-free (Apo-rLf)], cisplatin (Cis) or their combination were embedded within a biodegradable polycaprolactone (PCL) polymer thin film, by a modified approach of a laser-based technique, matrix-assisted pulsed laser evaporation (MAPLE). The structural and morphological properties of the deposited hybrid films were analyzed by Fourier-transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM). The in vitro effect on the cells' morphology and proliferation of murine melanoma B16-F10 cells was investigated and correlated with the films' surface chemistry and topography. Biological assays revealed decreased viability and proliferation, lower adherence, and morphological modifications in the case of melanoma cells cultured on both Apo-rLf and Cis thin films. The antitumor effect was enhanced by deposition of Apo-rLf with Cis within the same film. The unique capability of the new approach, based on MAPLE, to embed antitumor active factors within a biodegradable matrix for obtaining novel biodegradable hybrid platform with increased antitumor efficiency has been demonstrated.

  5. The fabrication and characterization of nano-SQUIDs based on Nb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xixi; Liu, Xiaoyu; Wang, Hao; Chen, Lei, E-mail: leichen@mail.sim.ac.cn; Wang, Zhen

    2015-08-15

    Highlights: • We developed a nano-SQUID fabrication process starting from a high-quality thin film. • The fabricated nano-SQUIDs exhibited flux modulation depth up to 10.3% at 4.6 K. • The measured data agreed with the Ginzburg–Landau simulation. • We found that a small critical current <50 μA is important for a deep flux modulation. • The suggestions in improving the nano-SQUID’s performance were discussed. - Abstract: SQUIDs with nano-junctions (or nano-SQUIDs) are able to be miniaturized into nanoscale to measure a single Bohr magneton. Here, we reported the development of a fabrication process for Nb (niobium) nano-SQUIDs using the thin film deposition and the electron-beam lithography technology. The developed process started from a high-quality superconducting thin film so that it is compatible with a variety of film growing techniques. The as-fabricated nano-SQUIDs exhibited functional flux modulation depth up to 10.3% at 4.6 K, in agreement with the numerical simulation based on the Ginzburg–Landau equation. By further comparing the results from both experiments and simulations, we found that a small critical current below ∼50 μA played a leading role in order to obtain a decent flux-modulation depth for Nb nano-SQUIDs.

  6. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  7. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  8. Bias-stress-induced instability of polymer thin-film transistor based on poly(3-hexylthiophene)

    OpenAIRE

    Liu, YR; Liao, R.; Lai, PT; Yao, RH

    2012-01-01

    A polymer thin-film transistor (PTFT) based on poly(3-hexylthiophene) (P3HT) is fabricated by a spin-coating process and characterized. Its bias-stress-induced instability during operation is investigated as a function of time and temperature. For negative gate-bias stress, the carrier mobility remains unchanged, the off-state current decreases, and the threshold voltage shifts toward the negative direction. On the other hand, for negative drain-bias stress, the carrier mobility decreases sli...

  9. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  10. Modeling of Thin Film Solar Photovoltaic Based on Zno/Sns Oxide-Absorber Substrate Configuration

    Directory of Open Access Journals (Sweden)

    Anupam Verma

    2014-06-01

    Full Text Available Due to increasing awareness for using clean energy and therefore greater demand for relying more on the renewable sources which solar photovoltaic are part of because they pose very little or no threat to the environment comparatively, there is growing pressure for reducing electricity generation costs from solar photovoltaic (PV modules. Hence there is need for alternative new light absorbing materials that can provide conversion efficiencies which would be comparable to the current technologies based on crystalline silicon and CdTe or CIGS thin films at lower manufacturing costs and therefore providing cost effective solutions. In this paper we have evaluated the tin based absorber material (based on tin monosulfide; SnS as the next generation of Photovoltaic cells that can provide the desired performance in the long term. Therefore it explores the potential use of tin mono-sulfide as photovoltaic material for conversion of light into electricity. Zinc Oxide (ZnO thin films have been recognized as good candidates in photovoltaic devices acting as wide-band gap window layer. The results are presented through the numerical analysis done by AMPD-1D simulator tool to explore the possibility of using thin film and stable ZnO/SnS solar photovoltaic device with aim to achieve comparable conversion efficiencies.

  11. InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sang, Liwen, E-mail: SANG.Liwen@nims.go.jp [International Center for Material Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); JST-PRESTO, The Japan Science and Technology Agency, Tokyo 102-0076 (Japan); Liao, Meiyong; Koide, Yasuo [Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Sumiya, Masatomo [Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); JST-ALCA, The Japan Science and Technology Agency, Tokyo 102-0076 (Japan)

    2015-03-14

    In{sub x}Ga{sub 1−x}N, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for the high-efficiency next-generation thin-film photovoltaic applications. Although the adoption of thick InGaN film as the active region is desirable to obtain efficient light absorption and carrier collection compared to InGaN/GaN quantum wells structure, the understanding on the effect from structural design is still unclear due to the poor-quality InGaN films with thickness and difficulty of p-type doping. In this paper, we comprehensively investigate the effects from film epitaxy, doping, and device structural design on the performances of the InGaN-based solar cells. The high-quality InGaN thick film is obtained on AlN/sapphire template, and p-In{sub 0.08}Ga{sub 0.92}N is achieved with a high hole concentration of more than 10{sup 18 }cm{sup −3}. The dependence of the photovoltaic performances on different structures, such as active regions and p-type regions is analyzed with respect to the carrier transport mechanism in the dark and under illumination. The strategy of improving the p-i interface by using a super-thin AlN interlayer is provided, which successfully enhances the performance of the solar cells.

  12. Nanotribological Behavior of Carbon Based Thin Films: Friction and Lubricity Mechanisms at the Nanoscale

    Directory of Open Access Journals (Sweden)

    Costas A. Charitidis

    2013-04-01

    Full Text Available The use of materials with very attractive friction and wear properties has raised much attention in research and industrial sectors. A wide range of tribological applications, including rolling and sliding bearings, machining, mechanical seals, biomedical implants and microelectromechanical systems (MEMS, require thin films with high mechanical strength, chemical inertness, broad optical transparency, high refractive index, wide bandgap excellent thermal conductivity and extremely low thermal expansion. Carbon based thin films like diamond, diamond-like carbon, carbon nitride and cubic boron nitride known as “super-hard” material have been studied thoroughly as the ideal candidate for tribological applications. In this study, the results of experimental and simulation works on the nanotribological behavior of carbon films and fundamental mechanisms of friction and lubricity at the nano-scale are reviewed. The study is focused on the nanomechanical properties and analysis of the nanoscratching processes at low loads to obtain quantitative analysis, the comparison obtain quantitative analysis, the comparison of their elastic/plastic deformation response, and nanotribological behavior of the a-C, ta-C, a-C:H, CNx, and a-C:M films. For ta-C and a-C:M films new data are presented and discussed.

  13. Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Karteri, İbrahim, E-mail: ibrahimkarteri@gmail.com [Department of Materials Science And Engineering, Kahramanmaras Sutcu Imam University, Kahramanmaraş 4610 (Turkey); Karataş, Şükrü [Department of Physics, Kahramanmaras Sutcu Imam University, Kahramanmaraş 4610 (Turkey); Yakuphanoğlu, Fahrettin [Department of Physics, Fırat University, Elazıg 2310 (Turkey)

    2014-11-01

    Highlights: • We report the synthesis of graphene oxide nanosheets and electrical characterization of graphene oxide based thin film transistor. • Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. • We used insulator layers which are polymethylmethacrylate (PMMA) and polyvinyl phenol (PVP) for graphene oxide based thin flim transistor. - Abstract: We have studied the electrical characteristics of graphene oxide based thin flim transistor with the polymer insulators such as polymethyl methacrylate (PMMA) and poly-4-vinylphenol (PVP). Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. The structural properties of GO nanosheets were characterized with Ultraviolet Visible (UV–vis), FT-IR spectroscopy and X-rays diffraction (XRD). Graphene oxide based thin flim transistor (GO-TFT) was prepared by a spin-coating and thermal evaporation technique. The electrical characterization of GO-TFT was analyzed by output and transfer characteristics by using Keithley-4200 semiconductor characterization system (SCS). The graphene oxide based thin flim transistor devices show p-type semiconducting behavior. The mobility, threshold voltage, sub-threshold swing value and I{sub on}/I{sub off} of GO-TFT were found to be 0.105 cm{sup 2} V{sup −1} s{sup −1}, −8.7 V, 4.03 V/decade and 10, respectively.

  14. Nanoscale Ta-based diffusion barrier thin-films and their resistance properties

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Nanoscale Ta-based diffusion barrier thin-films and Cu/barrier/Si multilayer structures were deposited on p-type Si (100) substrates by DC magnetron sputtering. Then the samples were rapidly thermal-annealed (RTA) by tungsten halide lamp. The resistance properties, structure and surface morphology of the thin-films were investigated by four-point probe (FPP) sheet resistance measurement, AFM, SEM-EDS, Alpha-Step IQ Profilers and XRD. The experimental results showed that agglomeration, oxidation and stabilization effects are concurrent. And resistance increasing and decreasing are coexistent after RTA. The formation of high resistance Cu3Si due to inter-diffusion between Cu and Si and more intensive electron scattering resulting from rougher surface caused the sheet resistance to increase abruptly after high temperature RTA.

  15. Nanoscale Ta-based diffusion barrier thin-films and their resistance properties

    Institute of Scientific and Technical Information of China (English)

    ZHOU JiCheng; CHEN HaiBo; LI YouZhen

    2008-01-01

    Nanoscale Ta-based diffusion barrier thin-films and Cu/barrier/Si multilayer struc-tures were deposited on p-type Si (100) substrates by DC magnetron sputtering.Then the samples were rapidly thermal-annealed (RTA) by tungsten halide lamp.The resistance properties,structure and surface morphology of the thin-films were investigated by four-point probe (FPP) sheet resistance measurement,AFM,SEM-EDS,Alpha-Step IQ Profilers and XRD.The experimental results showed that agglomeration,oxidation and stabilization effects are concurrent.And resistance increasing and decreasing are coexistent after RTA.The formation of high resis-tance Cu3Si due to inter-diffusion between Cu and Si and more intensive electron scattering resulting from rougher surface caused the sheet resistance to increase abruptly after high temperature RTA.

  16. Design and fabrication of a MEMS Lamb wave device based on ZnO thin film*

    Institute of Scientific and Technical Information of China (English)

    Liu Mengwei; Li Junhong; Ma Jun; Wang Chenghao

    2011-01-01

    This paper presents the design and fabrication of a Lamb wave device based on ZnO piezoelectric film.The Lamb waves were respectively launched and received by both Al interdigital transducers. In order to reduce the stress of the thin membrane, the ZnO/A1/LTO/Si3N4/Si multilayered thin plate was designed and fabricated. A novel method to obtain the piezoelectric constant of the ZnO film was used. The experimental results for characterizing the wave propagation modes and their frequencies of the Lamb wave device indicated that the measured center frequency of antisymmetric A0 and symmetric S0 modes Lamb wave agree with the theoretical predictions. The mass sensitivity of the MEMS Lamb wave device was also characterized for gravimetric sensing application.

  17. Design and fabrication of a MEMS Lamb wave device based on ZnO thin film

    Energy Technology Data Exchange (ETDEWEB)

    Liu Mengwei; Li Junhong; Ma Jun; Wang Chenghao, E-mail: liumw@mail.ioa.ac.cn [Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190 (China)

    2011-04-15

    This paper presents the design and fabrication of a Lamb wave device based on ZnO piezoelectric film. The Lamb waves were respectively launched and received by both Al interdigital transducers. In order to reduce the stress of the thin membrane, the ZnO/Al/LTO/Si{sub 3}N{sub 4}/Si multilayered thin plate was designed and fabricated. A novel method to obtain the piezoelectric constant of the ZnO film was used. The experimental results for characterizing the wave propagation modes and their frequencies of the Lamb wave device indicated that the measured center frequency of antisymmetric A{sub 0} and symmetric S{sub 0} modes Lamb wave agree with the theoretical predictions. The mass sensitivity of the MEMS Lamb wave device was also characterized for gravimetric sensing application. (semiconductor devices)

  18. Schottky solar cells based on CsSnI3 thin-films

    Science.gov (United States)

    Chen, Zhuo; Wang, Jian J.; Ren, Yuhang; Yu, Chonglong; Shum, Kai

    2012-08-01

    We describe a Schottky solar cell based on the perovskite semiconductor CsSnI3 thin-film. The cell consists of a simple layer structure of indium-tin-oxide/CsSnI3/Au/Ti on glass substrate. The measured power conversion efficiency is 0.9%, which is limited by the series and shunt resistance. The influence of light intensity on open-circuit voltage and short-circuit current supports the Schottky solar cell model. Additionally, the spectrally resolved short-circuit current was measured, confirming the unintentionally doped CsSnI3 is of p-type characteristics. The CsSnI3 thin-film was synthesized by alternately depositing layers of SnCl2 and CsI on glass substrate followed by a thermal annealing process.

  19. Graphene oxide/carbon nanoparticle thin film based IR detector: Surface properties and device characterization

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Farzana Aktar [Experimental Physics Division, Atomic Energy Centre, 4, Kazi Nazrul Islam Avenue, Dhaka-1000 (Bangladesh); Hossain, Mohammad Abul [Department of Chemistry, Faculty of Science, University of Dhaka, Dhaka-1000 (Bangladesh); Uchida, Koji; Tamura, Takahiro; Sugawa, Kosuke; Mochida, Tomoaki; Otsuki, Joe [College of Science and Technology, Nihon University, 1-8-14 Kanda Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Mohiuddin, Tariq [Department of Physics, College of Science, Sultan Qaboos University, Muscat (Oman); Boby, Monny Akter [Department of Physics, Faculty of Science, University of Dhaka, Dhaka-1000 (Bangladesh); Alam, Mohammad Sahabul, E-mail: msalam@ksu.edu.sa [Department of Physics, Faculty of Science, University of Dhaka, Dhaka-1000 (Bangladesh); Department of Chemical Engineering, College of Engineering & King Abdullah Institute for Nanotechnology, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

    2015-10-15

    This work deals with the synthesis, characterization, and application of carbon nanoparticles (CNP) adorned graphene oxide (GO) nanocomposite materials. Here we mainly focus on an emerging topic in modern research field presenting GO-CNP nanocomposite as a infrared (IR) radiation detector device. GO-CNP thin film devices were fabricated from liquid phase at ambient condition where no modifying treatments were necessary. It works with no cooling treatment and also for stationary objects. A sharp response of human body IR radiation was detected with time constants of 3 and 36 sec and radiation responsivity was 3 mAW{sup −1}. The current also rises for quite a long time before saturation. This work discusses state-of-the-art material developing technique based on near-infrared photon absorption and their use in field deployable instrument for real-world applications. GO-CNP-based thin solid composite films also offer its potentiality to be utilized as p-type absorber material in thin film solar cell, as well.

  20. Graphene oxide/carbon nanoparticle thin film based IR detector: Surface properties and device characterization

    Directory of Open Access Journals (Sweden)

    Farzana Aktar Chowdhury

    2015-10-01

    Full Text Available This work deals with the synthesis, characterization, and application of carbon nanoparticles (CNP adorned graphene oxide (GO nanocomposite materials. Here we mainly focus on an emerging topic in modern research field presenting GO-CNP nanocomposite as a infrared (IR radiation detector device. GO-CNP thin film devices were fabricated from liquid phase at ambient condition where no modifying treatments were necessary. It works with no cooling treatment and also for stationary objects. A sharp response of human body IR radiation was detected with time constants of 3 and 36 sec and radiation responsivity was 3 mAW−1. The current also rises for quite a long time before saturation. This work discusses state-of-the-art material developing technique based on near-infrared photon absorption and their use in field deployable instrument for real-world applications. GO-CNP-based thin solid composite films also offer its potentiality to be utilized as p-type absorber material in thin film solar cell, as well.

  1. Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors

    Institute of Scientific and Technical Information of China (English)

    Zhao Xiaofeng; Wen Dianzhong; Zhuang Cuicui; Cao Jingya; Wang Zhiqiang

    2013-01-01

    A magnetic field sensor based on nano-polysilicon thin films transistors (TFTs) with Hall probes is proposed.The magnetic field sensors are fabricated on 〈100〉 orientation high resistivity (ρ > 500 Ω·cm) silicon substrates by using CMOS technology,which adopt nano-polysilicon thin films with thicknesses of 90 nm and heterojunction interfaces between the nano-polysilicon thin films and the high resistivity silicon substrates as the sensing layers.The experimental results show that when VDS =5.0 V,the magnetic sensitivities of magnetic field sensors based on nano-polysilicon TFTs with length-width ratios of 160 μm/80 μm,320 μm/80 μm and 480 μm/80μm are 78 mV/T,55 mV/T and 34 mV/T,respectively.Under the same conditions,the magnetic sensitivity of the obtained magnetic field sensor is significantly improved in comparison with a Hall magnetic field sensor adopting silicon as the sensing layers.

  2. Miniaturized and reconfigurable notch antenna based on a BST ferroelectric thin film

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Hung Viet [Institut d' Electronique et de Télécommunications de Rennes (IETR), IUT Saint-Brieuc, Université de Rennes 1, 22004 Saint-Brieuc (France); CEA-LETI, Minatec, 17 avenue des Martyrs, 38054 Grenoble Cedex 9 (France); Benzerga, Ratiba, E-mail: ratiba.benzerga@univ-rennes1.fr [Institut d' Electronique et de Télécommunications de Rennes (IETR), IUT Saint-Brieuc, Université de Rennes 1, 22004 Saint-Brieuc (France); Borderon, Caroline [IETR, Université de Nantes, 2 rue de la Houssinière, 44322 Nantes (France); Delaveaud, Christophe [CEA-LETI, Minatec, 17 avenue des Martyrs, 38054 Grenoble Cedex 9 (France); Sharaiha, Ala [Institut d' Electronique et de Télécommunications de Rennes (IETR), IUT Saint-Brieuc, Université de Rennes 1, 22004 Saint-Brieuc (France); Renoud, Raphael [IETR, Université de Nantes, 2 rue de la Houssinière, 44322 Nantes (France); Paven, Claire Le [Institut d' Electronique et de Télécommunications de Rennes (IETR), IUT Saint-Brieuc, Université de Rennes 1, 22004 Saint-Brieuc (France); Pavy, Sabrina; Nadaud, Kevin; Gundel, Hartmut W. [IETR, Université de Nantes, 2 rue de la Houssinière, 44322 Nantes (France)

    2015-07-15

    Highlights: • A miniature and agile antenna based on a BST MIM capacitor is simulated and made. • Mn{sup 2+} doped BST thin films are synthesized by chemical deposition and spin coating. • Permittivity and losses of the BST thin film are respectively 225 and 0.02 at 1 GHz. • A miniaturization rate of 70% is obtained with a MIM capacitance of 3.7 pF. • A frequency tunability of 14.5% and a tunability performance of 0.04 are measured. - Abstract: This work deals with the design, realization and characterization of a miniature and frequency agile antenna based on a ferroelectric Ba{sub 0,80}Sr{sub 0,20}TiO{sub 3} thin film. The notch antenna is loaded with a variable metal/insulator/metal (MIM) capacitor and is achieved by a monolithic method. The MIM capacitance is 3.7 pF, which results in a resonant frequency of 670 MHz compared to 2.25 GHz for the unloaded simulated antenna; the resulting miniaturization rate is 70%. The characterization of the antenna prototype shows a frequency tunable rate of 14.5% under an electric field of 375 kV/cm, with a tunability performance η = 0.04.

  3. Thin film chemical sensors based on chalcogenide glasses for ''electronic tongue'' application

    Energy Technology Data Exchange (ETDEWEB)

    Mourzina, Yu.; Legin, A.V.; Vlasov, Yu.G. [Sankt-Peterburgskij Univ., St. Petersburg (Russian Federation). Kafedra Khimii; Schoening, M.J. [Forschungszentrum Juelich GmbH (Germany). Abt. Sicherheit und Strahlenschutz]|[Univ. of Applied Sciences Aachen, Juelich (Germany); Schubert, J.; Zander, W.; Lueth, H. [Forschungszentrum Juelich GmbH (Germany). Abt. Sicherheit und Strahlenschutz

    2001-07-01

    A novel thin film preparation method, a pulsed laser deposition (PLD) technique, has been used in the present investigation to realise thin film chalcogenide layers for chemical sensor membranes. This technique is compatible with silicon technology and was aimed at fabrication of primary devices for analytical microsystems for the needs of fast analysis and in-situ measurements. The combination of the new type of the potentiometric thin film sensor array based on chalcogenide glass materials and artificial neural network for the experimental data processing is also presented. (orig.)

  4. Ultrasonic Spray-Assisted Solution-Based Vapor-Deposition of Aluminum Tris(8-hydroxyquinoline) Thin Films

    Science.gov (United States)

    Piao, Jinchun; Katori, Shigetaka; Ikenoue, Takumi; Fujita, Shizuo

    2011-02-01

    Aluminum tris(8-hydroxyquinoline) (Alq3) thin films were fabricated by a vapor-deposition technique from its methanol solution, that is, by the ultrasonic-assisted mist deposition technique. The application of high ultrasonic power to the Alq3-methanol mixture resulted in a stable and transparent solution. Mist particles formed by ultrasonic atomization of the solution were used as the source for vapor-deposition at the substrate temperature of 100-200 °C. Optical absorption and photoluminescence characteristics indicated the formation of Alq3 thin films. The results promise the formation of thin films of a variety of organic materials by the solution-based technique.

  5. [Spectral emissivity of thin films].

    Science.gov (United States)

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  6. Critical current density measurement of thin films by AC susceptibility based on the penetration parameter h

    Energy Technology Data Exchange (ETDEWEB)

    Li Xiaofen, E-mail: xiaofenli@gmail.com [Materials Research Division, Riso National Laboratory for Sustainable Energy, Technical University of Denmark, Frederiksborgvej 399, DK-4000 Roskilde (Denmark); Grivel, Jean-Claude; Abrahamsen, Asger B.; Andersen, Niels H. [Materials Research Division, Riso National Laboratory for Sustainable Energy, Technical University of Denmark, Frederiksborgvej 399, DK-4000 Roskilde (Denmark)

    2012-07-15

    We have numerically proved that the dependence of AC susceptibility {chi} of a E(J) power law superconducting thin disc on many parameters can be reduced to one penetration parameter h, with E the electric field and J the current density. Based on this result, we propose a way of measuring the critical current density J{sub c} of superconducting thin films by AC susceptibility. Compared with the normally used method based on the peak of the imaginary part, our method uses a much larger range of the AC susceptibility curve, thus allowing determination of the temperature (T) dependence of J{sub c} from a normally applied {chi}(T) measurement. A fitting equation J{sub c} = 1.9H{sub a} Divides {chi} Prime Divides {sup 0.69}/d, -0.4 < {chi} Prime < -0.001 derived from the critical state case (Bean model) can be used in most situations, where H{sub a} is the amplitude of the applied AC field, {chi} Prime is the real part of the normalized susceptibility and d is the thickness of the film. The method is valid for the cases where the film is fully penetrated. We also discuss how the finite London penetration depth affects the susceptibility when the film is screened. Measurements with varying T, H{sub a} and DC background field H{sub dc} are performed to support the arguments.

  7. Critical current density measurement of thin films by AC susceptibility based on the penetration parameter h

    Science.gov (United States)

    Li, Xiao-Fen; Grivel, Jean-Claude; Abrahamsen, Asger B.; Andersen, Niels H.

    2012-07-01

    We have numerically proved that the dependence of AC susceptibility χ of a E(J) power law superconducting thin disc on many parameters can be reduced to one penetration parameter h, with E the electric field and J the current density. Based on this result, we propose a way of measuring the critical current density Jc of superconducting thin films by AC susceptibility. Compared with the normally used method based on the peak of the imaginary part, our method uses a much larger range of the AC susceptibility curve, thus allowing determination of the temperature (T) dependence of Jc from a normally applied χ(T) measurement. A fitting equation Jc = 1.9Ha∣χ‧∣0.69/d, -0.4 Bean model) can be used in most situations, where Ha is the amplitude of the applied AC field, χ‧ is the real part of the normalized susceptibility and d is the thickness of the film. The method is valid for the cases where the film is fully penetrated. We also discuss how the finite London penetration depth affects the susceptibility when the film is screened. Measurements with varying T, Ha and DC background field Hdc are performed to support the arguments.

  8. Ultraviolet photosensors based on ZnS thin films

    Directory of Open Access Journals (Sweden)

    Bobrenko Yu. N.

    2009-10-01

    Full Text Available High efficient photodiodes on the base of р-Cu1,8S/n-ZnS/(ZnSх(CdSe1–х/CdSe/Mo-structure with variband interlayer were fabricated. Optimization of this layer thickness was shown to be efficient method of reduction of photosensitivity behind UV region while preserving one in UV region.

  9. Ultimate form freedom in thin film solar cells by postmanufacture laser-based processing

    NARCIS (Netherlands)

    Gilot, J.; Emelin, B.; Galagan, Y.; Mandamparambil, R.; Andriessen, R.

    2015-01-01

    Thin film photovoltaics can be beneficial for specific applications like building integrated photovoltaics. To fully exploit the differentiator of form freedom, the interconnections in thin film modules can be tuned depending on the required module output. Traditionally, an alternation of coating an

  10. Investigation of Tribological Behavior of Lanthanum-Based Thin Films Deposited on Sulfonated Self-Assembled Monolayer

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    3-mercaptopropyl trimethoxysilane (MPTS) was prepared on glass substrate so as to form a two-dimensional self-assembled monolayer (SAM), and the terminal -SH group in the film was in situ oxidized to -SO3H group to confer good chemisorption ability to the film. Thus, lanthanum-based thin films were deposited on oxidized MPTS-SAM, making use of the chemisorption ability of -SO3H group. Atomic force microscopy (AFM) and X-ray photoelectron spectrometry (XPS) and contact angle measurements were used to characterize the thin films. The tribological properties of the as-prepared thin films sliding against a steel ball were evaluated on a friction and wear tester. Tribological experiment shows that the friction coefficient of glass substrate decreases from 0.8 to 0.08 after the rare earth (RE) self-assembled films (SAMs) are formed on its surface. And the RE self-assembled films have longer wear life (500 sliding passes). It is demonstrated that RE self-assembled film exhibits good wear-resistant property. The marked decrease in friction and the longer wear life of RE films are attributed to the excellent adhesion of the film to the substrate and to the special characteristics of the RE elements. The frictional behaviors of RE thin-films-coated silicon surface were sensitive to the applied load and the sliding velocity of the steel ball.

  11. Nano-tribological characteristics of lanthanum-based thin films on sulfonated self-assembled monolayer of 3-mercaptopropyl trimethoxysilane

    Institute of Scientific and Technical Information of China (English)

    BAI Tao; CHENG Xianhua

    2008-01-01

    Silane coupling reagent (3-mercaptopropyl trimethoxysilane (MPTS)) was prepared on silicon substrate to form two-dimensional Self-Assembled Monolayer (SAM) and the terminal -SH group in the film was in situ oxidized to -SO3H group to endow the film with good chemisorption ability. Thus, lanthanum-based thin films were deposited on oxidized MPTS-SAM to form rare earth composite thin films (RE thin films), making use of the chemisorption ability of the --SO3H group. Atomic Force Microscope (AFM), X-ray Photoelectron Spectrometry (XPS), and contact angle measurements were used to characterize the RE thin films. Adhesive force and friction force of the RE thin films and silicon substrate were measured under various applied normal loads and scanning speed of AFM tip. The results showed that the friction force increased with applied normal loads and scanning speed of AFM tip. To study the effect of capillary force, tests were performed in various relative humidities. The results showed that the adhesive force of silicon substrate increased with relative humidity and the adhesive force of RE thin films only increased slightly with relative humidity. Research showed that surfaces with higher hydrophobic property reveal lowered adhesive and friction forces.

  12. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  13. A Photonic Crystal Laser from Solution Based Organo-Lead Iodide Perovskite Thin Films.

    Science.gov (United States)

    Chen, Songtao; Roh, Kwangdong; Lee, Joonhee; Chong, Wee Kiang; Lu, Yao; Mathews, Nripan; Sum, Tze Chien; Nurmikko, Arto

    2016-04-26

    Perovskite semiconductors are actively investigated for high performance solar cells. Their large optical absorption coefficient and facile solution-based, low-temperature synthesis of thin films make perovskites also a candidate for light-emitting devices across the visible and near-infrared. Specific to their potential as optical gain medium for lasers, early work has demonstrated amplified spontaneous emission and lasing at attractively low thresholds of photoexcitation. Here, we take an important step toward practically usable perovskite lasers where a solution-processed thin film is embedded within a two-dimensional photonic crystal resonator. We demonstrate high degree of temporally and spatially coherent lasing whereby well-defined directional emission is achieved near 788 nm wavelength at optical pumping energy density threshold of 68.5 ± 3.0 μJ/cm(2). The measured power conversion efficiency and differential quantum efficiency of the perovskite photonic crystal laser are 13.8 ± 0.8% and 35.8 ± 5.4%, respectively. Importantly, our approach enables scalability of the thin film lasers to a two-dimensional multielement pixelated array of microlasers which we demonstrate as a proof-of-concept for possible projection display applications.

  14. Chemical vapor deposition based tungsten disulfide (WS2) thin film transistor

    KAUST Repository

    Hussain, Aftab M.

    2013-04-01

    Tungsten disulfide (WS2) is a layered transition metal dichalcogenide with a reported band gap of 1.8 eV in bulk and 1.32-1.4 eV in its thin film form. 2D atomic layers of metal dichalcogenides have shown changes in conductivity with applied electric field. This makes them an interesting option for channel material in field effect transistors (FETs). Therefore, we show a highly manufacturable chemical vapor deposition (CVD) based simple process to grow WS2 directly on silicon oxide in a furnace and then its transistor action with back gated device with room temperature field effect mobility of 0.1003 cm2/V-s using the Schottky barrier contact model. We also show the semiconducting behavior of this WS2 thin film which is more promising than thermally unstable organic materials for thin film transistor application. Our direct growth method on silicon oxide also holds interesting opportunities for macro-electronics applications. © 2013 IEEE.

  15. Deoxyribonucleic acid-based hybrid thin films for potential application as high energy density capacitors

    Science.gov (United States)

    Joyce, Donna M.; Venkat, Narayanan; Ouchen, Fahima; Singh, Kristi M.; Smith, Steven R.; Grabowski, Christopher A.; Terry Murray, P.; Grote, James G.

    2014-03-01

    Deoxyribonucleic acid (DNA) based hybrid films incorporating sol-gel-derived ceramics have shown strong promise as insulating dielectrics for high voltage capacitor applications. Our studies of DNA-CTMA (cetyltrimethylammonium) complex/sol-gel ceramic hybrid thin film devices have demonstrated reproducibility and stability in temperature- and frequency-dependent dielectric properties with dielectric constant k ˜ 5.0 (1 kHz), as well as reliability in DC voltage breakdown measurements, attaining values consistently in the range of 300-350 V/μm. The electrical/dielectric characteristics of DNA-CTMA films with sol-gel-derived ceramics were examined to determine the critical energy storage parameters such as voltage breakdown and dielectric constant.

  16. Molecular group dynamics study on slip flow of thin fluid film based on the Hamaker hypotheses

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The thin fluid film was assumed to consist of a number of spherical fluid molecular groups and the attractive forces of molecular group pairs were calculated by the derived equation according to the three Hamaker homogeneous material hypotheses. Regarding each molecular group as a dynamics individual, the simulation method for the shearing motion of multilayer fluid molecular groups, which was initiated by two moving walls, was proposed based on the Verlet velocity iterative algorithm. The simulations reveal that the velocities of fluid molecular groups change about their respective mean velocities within a narrow range in steady state. It is also found that the velocity slips occur at the wall boundary and in a certain number of fluid film layers close to the wall. Because the dimension of molecular group and the number of group layers are not restricted, the hypothetical thickness of fluid film model can be enlarged from nanometer to micron by using the proposed simulation method.

  17. Carbon Superatom Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Canning, A. [Cray Research, PSE, EPFL, 1015 Lausanne (Switzerland); Canning, A.; Galli, G. [Institut Romand de Recherche Numerique en Physique des Materiaux (IRRMA), IN-Ecublens, 1015 Lausanne (Switzerland); Kim, J. [Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

    1997-06-01

    We report on quantum molecular dynamics simulations of C{sub 28} deposition on a semiconducting surface. Our results show that under certain deposition conditions C{sub 28} {close_quote}s act as building blocks on a nanometer scale to form a thin film of nearly defect-free molecules. The C{sub 28} {close_quote}s behave as carbon superatoms, with the majority of them being threefold or fourfold coordinated, similar to carbon atoms in amorphous systems. The microscopic structure of the deposited film supports recent suggestions about the stability of a new form of carbon, the hyperdiamond solid. {copyright} {ital 1997} {ital The American Physical Society}

  18. In-situ study of hydriding kinetics in Pd-based thin film systems

    Energy Technology Data Exchange (ETDEWEB)

    Delmelle, Renaud; Proost, Joris [Univ. Catholique de Louvain, Louvain-la-Neuve (Belgium). Div. of Materials and Process Engineering

    2010-07-01

    The hydriding kinetics of Pd thin films has been investigated in detail. The key experimental technique used in this work consists of a high resolution curvature measurement setup, which continuously monitors the reflections of multiple laser beams coming off a cantilevered sample. After mounting the sample inside a vacuum chamber, a H-containing gas mixture is introduced to instantaneously generate a given hydrogen partial pressure (p{sub H2}) inside the chamber. The resulting interaction of H with the Pd layer then leads to a volume expansion of the thin film system. This induces in turn changes in the sample curvature as a result of internal stresses developing in the Pd film during a hydriding cycle. Based on such curvature date obtained in-situ at different p{sub H2}, a two-step model for the kinetics of Pd-hydride formation has been proposed and expressions for the hydrogen adsorption and absorption velocities have been derived. The rate-limiting steps have been identified by studying the p{sub H2}-dependence of these velocities. Furthermore, from our in-situ experimental data, relevant kinetic parameters have been calculated. The effect of dry air exposure of the Pd films on the hydriding kinetics has been considered as well. (orig.)

  19. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  20. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  1. The development of potassium tantalate niobate thin films for satellite-based pyroelectric detectors

    Energy Technology Data Exchange (ETDEWEB)

    Cherry, H B.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering

    1997-05-01

    Potassium tantalate niobate (KTN) pyroelectric detectors are expected to provide detectivities, of 3.7 x 10{sup 11} cmHz {sup {1/2}}W{sup {minus}1} for satellite-based infrared detection at 90 K. The background limited detectivity for a room-temperature thermal detector is 1.8 x 10{sup 10} cmHz{sup {1/2}}W{sup {minus}1}. KTN is a unique ferroelectric for this application because of the ability to tailor the temperature of its pyroelectric response by adjusting its ratio of tantalum to niobium. The ability to fabricate high quality KTN thin films on Si-based substrates is crucial to the development of KTN pyroelectric detectors. Si{sub x}N{sub y} membranes created on the Si substrate will provide the weak thermal link necessary to reach background limited detectivities. The device dimensions obtainable by thin film processing are expected to increase the ferroelectric response by 20 times over bulk fabricated KTN detectors. In addition, microfabrication techniques allow for easier array development. This is the first reported attempt at growth of KTN films on Si-based substrates. Pure phase perovskite films were grown by pulsed laser deposition on SrRuO{sub 3}/Pt/Ti/Si{sub x}N{sub y}/Si and SrRuO{sub 3}/Si{sub x}N{sub y}/Si structures; room temperature dielectric permittivities for the KTN films were 290 and 2.5, respectively. The dielectric permittivity for bulk grown, single crystal KTN is {approximately}380. In addition to depressed dielectric permittivities, no ferroelectric hysteresis was found between 80 and 300 K for either structure. RBS, AES, TEM and multi-frequency dielectric measurements were used to investigate the origin of this apparent lack of ferroelectricity. Other issues addressed by this dissertation include: the role of oxygen and target density during pulsed laser deposition of KTN thin films; the use of YBCO, LSC and Pt as direct contact bottom electrodes to the KTN films, and the adhesion of the bottom electrode layers to Si{sub x}N{sub y}/Si.

  2. Optical absorbers based on strong interference in ultra-thin films

    CERN Document Server

    Kats, Mikhail A

    2016-01-01

    Optical absorbers find uses in a wide array of applications across the electromagnetic spectrum, including photovoltaic and photochemical cells, photodetectors, optical filters, stealth technology, and thermal light sources. Recent efforts have sought to reduce the footprint of optical absorbers, conventionally based on graded structures or Fabry-Perot-type cavities, by using the emerging concepts of plasmonics, metamaterials, and metasurfaces. Unfortunately, these new absorber designs require patterning on subwavelength length scales, and are therefore impractical for many large-scale optical and optoelectronic devices. In this article, we summarize recent progress in the development of optical absorbers based on lossy films with thicknesses significantly smaller than the incident optical wavelength. These structures have a small footprint and require no nanoscale patterning. We outline the theoretical foundation of these absorbers based on "ultra-thin-film interference", including the concepts of loss-induc...

  3. Thin film interconnect processes

    Science.gov (United States)

    Malik, Farid

    Interconnects and associated photolithography and etching processes play a dominant role in the feature shrinkage of electronic devices. Most interconnects are fabricated by use of thin film processing techniques. Planarization of dielectrics and novel metal deposition methods are the focus of current investigations. Spin-on glass, polyimides, etch-back, bias-sputtered quartz, and plasma-enhanced conformal films are being used to obtain planarized dielectrics over which metal films can be reliably deposited. Recent trends have been towards chemical vapor depositions of metals and refractory metal silicides. Interconnects of the future will be used in conjunction with planarized dielectric layers. Reliability of devices will depend to a large extent on the quality of the interconnects.

  4. Electrostatic thin film chemical and biological sensor

    Science.gov (United States)

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  5. Thin film solar cells based on layered chalcogenides: Fundamentals and perspectives of van der Waals epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Jaegermann, W.; Pettenkofer, C.; Lang, O.; Schlaf, R.; Tiefenbacher, S.; Tomm, Y. [Hahn-Meitner-Inst., Berlin (Germany)

    1994-12-31

    The preparation of thin films of layered chalcogenide semiconductors as MX and MX{sub 2} (X = S, Se) based on the concept of van der Waals epitaxy (VDWE) is presented for different substrate/overlayer combinations as GaSe, InSe, SnSe{sub 2}, WS{sub 2} on WSe{sub 2}, GaSe, MoTe{sub 2}, graphite and mica. In all cases stoichiometric films are formed either as epitaxial layers or strongly textured films with the c-axis aligned in spite of strong lattice mismatch. The interfaces are non-reactive and atomically abrupt. The electronic properties of the interfaces are mostly ideal showing band offsets according to the electron affinity rule and no operative interface states. However, doping of the films is still a problem which limits the band bending and the attainable surface photovoltage. The perspectives and preconditions for the further development of layered semiconductor VDWE films for solar cells will be critically discussed.

  6. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Junghwan, E-mail: JH.KIM@lucid.msl.titech.ac.jp; Miyokawa, Norihiko; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Toda, Yoshitake [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)

    2016-01-15

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  7. Silicon induced stability and mobility of indium zinc oxide based bilayer thin film transistors

    Science.gov (United States)

    Chauhan, Ram Narayan; Tiwari, Nidhi; Liu, Po-Tsun; Shieh, Han-Ping D.; Kumar, Jitendra

    2016-11-01

    Indium zinc oxide (IZO), silicon containing IZO, and IZO/IZO:Si bilayer thin films have been prepared by dual radio frequency magnetron sputtering on glass and SiO2/Si substrates for studying their chemical compositions and electrical characteristics in order to ascertain reliability for thin film transistor (TFT) applications. An attempt is therefore made here to fabricate single IZO and IZO/IZO:Si bilayer TFTs to study the effect of film thickness, silicon incorporation, and bilayer active channel on device performance and negative bias illumination stress (NBIS) stability. TFTs with increasing single active IZO layer thickness exhibit decrease in carrier mobility but steady improvement in NBIS; the best values being μFE ˜ 27.0, 22.0 cm2/Vs and ΔVth ˜ -13.00, -6.75 V for a channel thickness of 7 and 27 nm, respectively. While silicon incorporation is shown to reduce the mobility somewhat, it raises the stability markedly (ΔVth ˜ -1.20 V). Further, IZO (7 nm)/IZO:Si (27 nm) bilayer based TFTs display useful characteristics (field effect mobility, μFE = 15.3 cm2/Vs and NBIS value, ΔVth =-0.75 V) for their application in transparent electronics.

  8. Ceramic thin film thermocouples for SiC-based ceramic matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Wrbanek, John D., E-mail: John.D.Wrbanek@nasa.gov; Fralick, Gustave C.; Zhu Dongming

    2012-06-30

    Conductive ceramic thin film thermocouples were investigated for application to silicon carbide fiber reinforced silicon carbide ceramic matrix composite (SiC/SiC CMC) components. High temperature conductive oxides based on indium and zinc oxides were selected for testing to high temperatures in air. Sample oxide films were first sputtered-deposited on alumina substrates then on SiC/SiC CMC sample disks. Operational issues such as cold junction compensation to a 0 Degree-Sign C reference, resistivity and thermopower variations are discussed. Results show that zinc oxides have an extremely high resistance and thus increased complexity for use as a thermocouple, but thermocouples using indium oxides can achieve a strong, nearly linear response to high temperatures. - Highlights: Black-Right-Pointing-Pointer Oxide thin film thermocouples tested for SiC/SiC ceramic matrix composites (CMCs) Black-Right-Pointing-Pointer In{sub 2}O{sub 3}, N:In{sub 2}O{sub 3}, ZnO, AlZnO sputtered and tested on Al{sub 2}O{sub 3} and CMC substrates Black-Right-Pointing-Pointer ZnO, AlZnO have high resistance, complex temperature response. Black-Right-Pointing-Pointer In{sub 2}O{sub 3}, N:In{sub 2}O{sub 3} conductive at room temperature, more linear temperature response.

  9. Hole Mobility in Poly(N—vinylcarbazole) Thin Film Based on Silicium①②

    Institute of Scientific and Technical Information of China (English)

    CHENBaijun; WANGXiaowei; 等

    1997-01-01

    The mobilities of holes in thin,spin-casting films of poly(N-vinylcarbazole)(PVK) based on silicium are measured using a time-of-flight(TOF)technique.The drift of hole mobility is strongly dependent on the electric field and temperature.At room temperature and an electric field of2×105V·cm-1,the effective mobility of hole is 7.14×10-6cm2·V-1·s-1,in a 200nm thick sample.

  10. Electron Mobility in Tris(8—Hydroxyquinolinolato)Aluminum Thin Film Based on Silicium①②

    Institute of Scientific and Technical Information of China (English)

    CHENBaijun; ZHANGTieqiao; 等

    1997-01-01

    We have measured the mobilities of electrons in thin,vapor-deposited films of tris(8-hydroxyquinolinolato)aluminum(Alq3)based on silicium using a time-of-flight(TOF)technique.The drift of electron mobility is strongly electric field and temperature dependent.At room temperature and an electric field of 2×105V·cm-1,the effective mobility of electron is 1.0×10-5cm2·V-1·s-1 for 200nm thick sample.

  11. Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing

    Directory of Open Access Journals (Sweden)

    Gabriel Onno

    2014-02-01

    Full Text Available A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD reactor. We investigated the influence of substrate and chamber wall temperature and chamber history on the PECVD process. The impact of chamber wall conditioning on the solar cell performance is demonstrated.

  12. [Synthesis and Characterization of a Sugar Based Electrolyte for Thin-film Polymer Batteries

    Science.gov (United States)

    1998-01-01

    The work performed during the current renewal period, March 1,1998 focused primarily on the synthesis and characterization of a sugar based electrolyte for thin-film polymer batteries. The initial phase of the project involved developing a suitable sugar to use as the monomer in the polymeric electrolyte synthesis. The monomer has been synthesized and characterized completely. Overall the yield of this material is high and it can be produced in relatively large quantity easily and in high purity. The scheme used for the preparation of the monomer is outlined along with pertinent yields.

  13. A physical surface-potential-based drain current model for polysilicon thin-film transistors

    Institute of Scientific and Technical Information of China (English)

    Li Xiyue; Deng Wanling; Huang Junkai

    2012-01-01

    A physical drain current model of polysilicon thin-film transistors based on the charge-sheet model,the density of trap states and surface potential is proposed.The model uses non-iterative calculations,which are single-piece and valid in all operation regions above flat-band voltage.The distribution of the trap states,including both Gaussian deep-level states and exponential band-tail states,is also taken into account,and parameter extraction of trap state distribution is developed by the optoelectronic modulation spectroscopy measurement method.Comparisons with the available experimental data are accomplished,and good agreements are obtained.

  14. Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jinhua; Wang, Wei, E-mail: wwei99@jlu.edu.cn; Ying, Jun; Xie, Wenfa [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2014-01-06

    An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.

  15. Thin-Film Transistor-Based Biosensors for Determining Stoichiometry of Biochemical Reactions

    Science.gov (United States)

    Wang, Yi-Wen; Chen, Ting-Yang; Yang, Tsung-Han; Chang, Cheng-Chung; Yang, Tsung-Lin; Lo, Yu-Hwa

    2016-01-01

    The enzyme kinetic in a biochemical reaction is critical to scientific research and drug discovery but can hardly be determined experimentally from enzyme assays. In this work, a charge-current transducer (a transistor) is proposed to evaluate the status of biochemical reaction by monitoring the electrical charge changes. Using the malate-aspartate shuttle as an example, a thin-film transistor (TFT)-based biosensor with an extended gold pad is demonstrated to detect the biochemical reaction between NADH and NAD+. The drain current change indicates the status of chemical equilibrium and stoichiometry. PMID:28033412

  16. Tensoresistive Properties of Thin Film Systems Based on Ag and Co

    Directory of Open Access Journals (Sweden)

    I.M. Pazukha

    2012-10-01

    Full Text Available The results of research strain deformation properties of thin films Ag, Co and two-layers films Ag/Co in the range of deformation Δεl = 0-1 % were presented. The plastic deformation in Co layer caused a similar deformation in the entire film system, even if the strain range Ag layer is not reached the limits of the transition elastic/plastic deformation. The increasing of gauge factor value of two-layer systems in comparison with thin films Ag and Co appears as a result of electron interface scattering.

  17. Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

    Science.gov (United States)

    Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

    2017-03-01

    Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

  18. Hall current sensor IC with integrated Co-based alloy thin film magnetic concentrator

    Science.gov (United States)

    Palumbo, V.; Marchesi, M.; Chiesi, V.; Paci, D.; Iuliano, P.; Toia, F.; Casoli, F.; Ranzieri, P.; Albertini, F.; Morelli, M.

    2013-01-01

    This work deals with a cobalt-based alloy thin film magnetic concentrator (MC) which is fully integrated on a Hall sensor integrated circuit (IC) developed in the 0.35 µm Bipolar CMOS DMOS (BCD) technology on 8" silicon wafer. An amorphous magnetic film with a thickness of 1µm, coercitive field Hc<10A/m and saturation magnetization (µ0MS) of 0.45T has been obtained with a sputtering process. The Hall sensor IC has shown sensitivity to magnetic field at room temperature of 240V/AT without concentrator and 2550V/AT with concentrator, gaining a factor of 10.5. A current sensor demonstrator has been realized showing linear response in the range -50 to 50A.

  19. Hall current sensor IC with integrated Co-based alloy thin film magnetic concentrator

    Directory of Open Access Journals (Sweden)

    Albertini F.

    2013-01-01

    Full Text Available This work deals with a cobalt-based alloy thin film magnetic concentrator (MC which is fully integrated on a Hall sensor integrated circuit (IC developed in the 0.35 µm Bipolar CMOS DMOS (BCD technology on 8” silicon wafer. An amorphous magnetic film with a thickness of 1µm, coercitive field Hc<10A/m and saturation magnetization (µ0MS of 0.45T has been obtained with a sputtering process. The Hall sensor IC has shown sensitivity to magnetic field at room temperature of 240V/AT without concentrator and 2550V/AT with concentrator, gaining a factor of 10.5. A current sensor demonstrator has been realized showing linear response in the range -50 to 50A.

  20. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  1. Growth kinetics and processings of copper indium diselenide-based thin films

    Science.gov (United States)

    Kim, Suku

    CuInSe2 (CIS)-based compound semiconductors are increasingly important absorber layer materials for thin film solar cells. A better understanding of the growth kinetics of CuInSe2 thin films as a function of the process parameters would benefit the development of this technology. The reaction kinetics for formation of CuInSe2 from the bilayer structure InSe/CuSe was studied in-situ by high-temperature X-ray diffraction. The reaction pathway produces a diffusion barrier layer that can be schematically represented as InSe|CuSe → InSe|CuInSe 2|CuSe. Two different analyses based on the Avrami and the parabolic rate laws suggest that the reaction is one-dimensional diffusion controlled. The estimated apparent activation energy from each model is 66.0 and 65.2 kJ/mol, respectively. The result demonstrates that the time-resolved high temperature X-ray diffraction provides a powerful method for studying the reaction kinetics of CuInSe2 growth. The thermodynamic driving force for formation of copper selenide phase and the grain size distribution in CuInSe2 films was investigated. Large grains (˜a few mum) were observed in the CuInSe2 films annealed with a CuSe layer while films annealed without this layer exhibited very small grain size (<0.2 mum). This result suggests a secondary grain growth mechanism driven by the surface-energy anisotropy is responsible for the increased grain size. Epitaxial growth of CuInSe2 and CuGaSe2 on (001) GaAs substrates was attempted. The result shows that the crystalline structure and its quality strongly depends on the film stoichiometry, especially the [Cu]/[III] atomic ratio, with Cu-rich compositions showing higher crystalline quality. A two-dimensional model of heat transfer in the growth reactor was developed for a rotating platen/substrate in the molecular beam epitaxial reactor that was used for film growth. Time-varying view factors were included in the model to solve the problem dynamically and to account for the fact that the

  2. A Humidity Sensor Based on Silver Nanoparticles Thin Film Prepared by Electrostatic Spray Deposition Process

    Directory of Open Access Journals (Sweden)

    Thutiyaporn Thiwawong

    2013-01-01

    Full Text Available In this work, thin film of silver nanoparticles for humidity sensor application was deposited by electrostatic spray deposition technique. The influence of the deposition times on properties of films was studied. The crystal structures of sample films, their surface morphology, and optical properties have been investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, and UV-VIS spectrophotometer, respectively. The crystalline structure of silver nanoparticles thin film was found in the orientation of (100 and (200 planes of cubic structure at diffraction angles 2θ  =  38.2° and 44.3°, respectively. Moreover, the silver nanoparticles thin films humidity sensor was fabricated onto the interdigitated electrodes. The sensor exhibited the humidity adsorption and desorption properties. The sensing mechanisms of the device were also elucidated by complex impedance analysis.

  3. Albumin and fibrinogen adsorption on boron nitride and carbon-based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lousinian, S.; Kalfagiannis, N. [Laboratory for Thin Films - Nanosystems and Nanometrology (LTFN), Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Logothetidis, S. [Laboratory for Thin Films - Nanosystems and Nanometrology (LTFN), Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece)], E-mail: logot@auth.gr

    2008-08-25

    The haemocompatibility (in the sense of the least possibility of thrombus formation/thrombogenicity potential) of homogeneous and amorphous BN (a-BN) thin films through the adsorption of two basic blood plasma proteins, human serum albumin (HSA) and fibrinogen (Fib) is explored in this work. A comparative study of the thrombogenicity potential of BN, amorphous carbon (a-C) and amorphous hydrogenated carbon thin films (a-C:H) is also presented. a-BN and a-C thin films were produced by radio frequency (RF) magnetron sputtering onto c-Si (1 0 0) substrates under various values of substrate bias voltage. a-C:H thin films were developed by RF Reactive MS, with various values of substrate bias voltage and under different values of H{sub 2} partial pressure during deposition. For the consideration of the optical, compositional and structural properties of the films Spectroscopic Ellipsometry in the energy region of 1.5-6.5 eV was used, while for the study of surface topography and wetting properties Atomic Force Microscopy and Contact Angle measurements were additionally employed. The properties of the thin films were correlated with their thrombogenicity, through the estimation of the ratio of HSA/Fib surface concentration. a-BN films exhibit the smallest possibility of clot formation, with their wetting properties determining the thickness of the Fib layer formed on them as well as the ratio of HSA/Fib surface concentration. In the case of a-C thin films, the increase of % sp{sup 3} content is crucial, while the value of the fundamental gap seems to influence the possibility for clot formation on a-C:H thin films.

  4. Inkjet-based deposition of polymer thin films enabled by a lubrication model incorporating nano-scale parasitics

    Science.gov (United States)

    Singhal, Shrawan; Meissl, Mario J.; Bonnecaze, Roger T.; Sreenivasan, S. V.

    2013-09-01

    Thin film lubrication theory has been widely used to model multi-scale fluid phenomena. Variations of the same have also found application in fluid-based manufacturing process steps for micro- and nano-scale devices over large areas where a natural disparity in length scales exists. Here, a novel inkjet material deposition approach has been enabled by an enhanced thin film lubrication theory that accounts for nano-scale substrate parasitics. This approach includes fluid interactions with a thin flexible superstrate towards a new process called Jet and Coat of Thin-films (JCT). Numerical solutions of the model have been verified, and also validated against controlled experiments of polymer film deposition with good agreement. Understanding gleaned from the experimentally validated model has then been used to facilitate JCT process synthesis resulting in substantial reduction in the influence of parasitics and a concomitant improvement in the film thickness uniformity. Polymer films ranging from 20 to 500 nm mean thickness have been demonstrated with standard deviation of less than 2% of the mean film thickness. The JCT process offers advantages over spin coating which is not compatible with roll-to-roll processing and large area processing for displays. It also improves over techniques such as knife edge coating, slot die coating, as they are limited in the range of thicknesses of films that can be deposited without compromising uniformity.

  5. Aspects of passive magnetic levitation based on high-T(sub c) superconducting YBCO thin films

    Science.gov (United States)

    Schoenhuber, P.; Moon, F. C.

    1995-01-01

    Passive magnetic levitation systems reported in the past were mostly confined to bulk superconducting materials. Here we present fundamental studies on magnetic levitation employing cylindrical permanent magnets floating above high-T(sub c) superconducting YBCO thin films (thickness about 0.3 mu m). Experiments included free floating rotating magnets as well as well-established flexible beam methods. By means of the latter, we investigated levitation and drag force hysteresis as well as magnetic stiffness properties of the superconductor-magnet arrangement. In the case of vertical motion of the magnet, characteristic high symmetry of repulsive (approaching) and attractive (withdrawing) branches of the pronounced force-displacement hysteresis could be detected. Achievable force levels were low as expected but sufficient for levitation of permanent magnets. With regard to magnetic stiffness, thin films proved to show stiffness-force ratios about one order of magnitude higher than bulk materials. Phenomenological models support the measurements. Regarding the magnetic hysteresis of the superconductor, the Irie-Yamafuji model was used for solving the equation of force balance in cylindrical coordinates allowing for a macroscopic description of the superconductor magnetization. This procedure provided good agreement with experimental levitation force and stiffness data during vertical motion. For the case of (lateral) drag force basic qualitative characteristics could be recovered, too. It is shown that models, based on simple asymmetric magnetization of the superconductor, describe well asymptotic transition of drag forces after the change of the magnet motion direction. Virgin curves (starting from equilibrium, i.e. symmetric magnetization) are approximated by a linear approach already reported in literature only. This paper shows that basic properties of superconducting thin films allow for their application to magnetic levitation or - without need of levitation

  6. Aspects of passive magnetic levitation based on high-T(sub c) superconducting YBCO thin films

    Science.gov (United States)

    Schoenhuber, P.; Moon, F. C.

    1995-04-01

    Passive magnetic levitation systems reported in the past were mostly confined to bulk superconducting materials. Here we present fundamental studies on magnetic levitation employing cylindrical permanent magnets floating above high-T(sub c) superconducting YBCO thin films (thickness about 0.3 mu m). Experiments included free floating rotating magnets as well as well-established flexible beam methods. By means of the latter, we investigated levitation and drag force hysteresis as well as magnetic stiffness properties of the superconductor-magnet arrangement. In the case of vertical motion of the magnet, characteristic high symmetry of repulsive (approaching) and attractive (withdrawing) branches of the pronounced force-displacement hysteresis could be detected. Achievable force levels were low as expected but sufficient for levitation of permanent magnets. With regard to magnetic stiffness, thin films proved to show stiffness-force ratios about one order of magnitude higher than bulk materials. Phenomenological models support the measurements. Regarding the magnetic hysteresis of the superconductor, the Irie-Yamafuji model was used for solving the equation of force balance in cylindrical coordinates allowing for a macroscopic description of the superconductor magnetization. This procedure provided good agreement with experimental levitation force and stiffness data during vertical motion. For the case of (lateral) drag force basic qualitative characteristics could be recovered, too. It is shown that models, based on simple asymmetric magnetization of the superconductor, describe well asymptotic transition of drag forces after the change of the magnet motion direction. Virgin curves (starting from equilibrium, i.e. symmetric magnetization) are approximated by a linear approach already reported in literature only. This paper shows that basic properties of superconducting thin films allow for their application to magnetic levitation or - without need of levitation

  7. Time weighted average concentration monitoring based on thin film solid phase microextraction.

    Science.gov (United States)

    Ahmadi, Fardin; Sparham, Chris; Boyaci, Ezel; Pawliszyn, Janusz

    2017-03-02

    Time weighted average (TWA) passive sampling with thin film solid phase microextraction (TF-SPME) and liquid chromatography tandem mass spectrometry (LC-MS/MS) was used for collection, identification, and quantification of benzophenone-3, benzophenone-4, 2-phenylbenzimidazole-5-sulphonic acid, octocrylene, and triclosan in the aquatic environment. Two types of TF-SPME passive samplers, including a retracted thin film device using a hydrophilic lipophilic balance (HLB) coating, and an open bed configuration with an octadecyl silica-based (C18) coating, were evaluated in an aqueous standard generation (ASG) system. Laboratory calibration results indicated that the thin film retracted device using HLB coating is suitable to determine TWA concentrations of polar analytes in water, with an uptake that was linear up to 70 days. In open bed form, a one-calibrant kinetic calibration technique was accomplished by loading benzophenone3-d5 as calibrant on the C18 coating to quantify all non-polar compounds. The experimental results showed that the one-calibrant kinetic calibration technique can be used for determination of classes of compounds in cases where deuterated counterparts are either not available or expensive. The developed passive samplers were deployed in wastewater-dominated reaches of the Grand River (Kitchener, ON) to verify their feasibility for determination of TWA concentrations in on-site applications. Field trials results indicated that these devices are suitable for long-term and short-term monitoring of compounds varying in polarity, such as UV blockers and biocide compounds in water, and the data were in good agreement with literature data.

  8. Aluminum nitride thin film based acoustic wave sensors for biosensing applications

    Science.gov (United States)

    Xu, Jianzeng

    In recent years, SAW devices have drawn enormous interest from the analytical assay and sensing business, especially in the biosensing area where highly sensitive, cost efficient and miniaturized sensors are in urgent needs. This dissertation focuses on the development of AIN thin film based SAW devices suitable for biosensing applications. AIN thin films have been synthesized on different orientations of sapphire substrates by a plasma source molecular beam epitaxy system. Surface and structural characterization techniques have been applied to investigate the film quality and the results show that high quality c-plane AIN was epitaxially grown on both c-plane and a-plane sapphire substrates. Complete process flows have been developed for the fabrication of SAW delay line and resonator devices. Important electrical parameters such as the insertion loss, bandwidth, and impedance have been measured to assist the design optimization and derivation the phase velocity, electromechanical coupling coefficient, and temperature coefficient of frequency. On both c-plane and a-plane sapphire substrates, the SAW phase velocities (˜5700 m/s) and electromechanical coupling coefficients (˜0.3%) have been thoroughly mapped out with respect to the propagation direction and film thickness to wavelength ratio. The data are of practical importance for designing AIN-based SAW devices. A higher velocity (>6000 m/s) shear horizontal SAW mode has been discovered only at isolated propagating directions. This mode is especially suitable for aqueous biosensing due to its weak energy coupling to liquid. Much stronger response of the SH-SAW mode has been detected on the c-plane AIN on a-plane sapphire structure than on the c-plane AIN on c-plane sapphire structure, which could be attributed to large anisotropy in a-plane sapphire substrate. Linear frequency-temperature relationship has also been observed for both modes. We further quantify the mass sensitivity of the SAW and SH-SAW by

  9. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  10. Superconducting detector of IR single-photons based on thin WSi films

    Science.gov (United States)

    Seleznev, V. A.; Divochiy, A. V.; Vakhtomin, Yu B.; Morozov, P. V.; Zolotov, P. I.; Vasil'ev, D. D.; Moiseev, K. M.; Malevannaya, E. I.; Smirnov, K. V.

    2016-08-01

    We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors’ SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).

  11. High energy oxygen ion induced modifications in lead based perovskite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jali, V.M. [Department of Physics, Gulbarga University, Gulbarga - 585 106 (India)]. E-mail: vmjali@rediffmail.com; Angadi, Basavaraj [Thin Films Materials Research Center, Korea Institute of Science and Technology, Seoul 130-650 (Korea, Republic of); Venkateswarlu, P. [Solar Panels Division, ISRO Satellite Centre, Bangalore - 560 017 (India); Kumar, Ravi [Materials Science Division, Inter University Accelerator Center, New-Delhi - 110 067 (India); Krupanidhi, S.B. [Materials Research Centre, Indian Institute of Science, Bangalore - 560 012 (India)

    2007-07-15

    The lead based ferroelectric PbZr{sub 0.53}Ti{sub 0.47}O{sub 3} (PZT), (Pb{sub 0.90}La{sub 0.10})TiO{sub 3} (PLT10) and (Pb{sub 0.80}La{sub 0.20})TiO{sub 3} (PLT20) thin films, prepared by pulsed laser ablation technique, were studied for their response to the 70 MeV oxygen ion irradiation. The dielectric analysis, capacitance-voltage (C-V) and DC leakage current measurements were performed before and after the irradiation to high-energy oxygen ions. The irradiation produced considerable changes in the dielectric, C-V, leakage characteristics and induced some amount of amorphization. The PZT films showed partial recrystallization after a thermal annealing at 400 deg. C for 10 min. The phase transition temperature [T {sub c}] of PLT20 increased from 115 deg. C to 120 deg. C. The DC conductivity measurements showed a shift in the onset of non-linear conduction region. The current density decreased by two orders of magnitude after irradiation. After annealing the irradiated films at a temperature of 400 deg. C for 10 min, the films partially regained the dielectric and electrical properties. The results are discussed in terms of the irradiation-induced amorphization, the pinning of the ferroelectric domains by trapped charges and the thermal annealing of the defects generated during the irradiation.

  12. 14% sputtered thin-film solar cells based on CdTe

    Science.gov (United States)

    Compaan, A. D.; Gupta, A.; Drayton, J.; Lee, S.-H.; Wang, S.

    2004-02-01

    Polycrystalline II-VI semiconductor materials show great promise for thin-film photovoltaic cells and modules. Large-area deposition of these II-VI semiconductors such as CdTe is possible by a variety of methods but the use of a plasma-based method such as magnetron sputtering can have significant advantages. Here we present recent results in the fabrication of CdS/CdTe cells using rf magnetron sputtering and discuss some of the advantages that appear possible from the use of sputtering methods in this class of materials. Some of these advantages are particularly relevant as the polycrystalline thin-film PV community addresses issues related to the challenges of fabricating high efficiency tandem cells with efficiencies over 25%. Our best results have been obtained with sputtered ZnO:Al to achieve a CdTe solar cell with 14.0% efficiency at one sun for an air-mass-1.5 global spectrum. In addition, we have studied reactive sputtering of ZnTe:N which shows promise for use as a transparent back contact or recombination junction for alloyed II-VI-based top cells in a tandem solar-cell configuration.

  13. n +-Microcrystalline-Silicon Tunnel Layer in Tandem Si-Based Thin Film Solar Cells

    Science.gov (United States)

    Lee, Ching-Ting; Lee, Hsin-Ying; Chen, Kuan-Hao

    2016-10-01

    In this study, the p-SiC/ i-Si/ n-Si cell and the p-SiC/ i-SiGe/ n-Si cell deposited using plasma-enhanced chemical vapor deposition were cascaded for forming the tandem Si-based thin film solar cells to absorb the wide solar spectrum. To further improve the performances of the tandem Si-based thin film solar cells, a 5-nm-thick n +-microcrystalline-Si ( n +-μc-Si) tunnel layer deposited using the laser-assisted plasma-enhanced chemical vapor deposition was inserted between the p-SiC/ i-Si/ n-Si cell and the p-SiC/ i-SiGe/ n-Si cell. Since both the plasma and the CO2 laser were simultaneously utilized to efficiently decompose the reactant and doping gases, the carrier concentration and the carrier mobility of the n +-μc-Si tunnel layer were significantly improved. The ohmic contact formed between the p-SiC layer and the n +-μc-Si tunnel layer with low resistance was beneficial to the generated current transportation and the carrier recombination rate. Therefore, the conversion efficiency of the tandem solar cells was promoted from 8.57% and 8.82% to 9.91% compared to that without tunnel layer and with 5-nm-thick n +-amorphous-Si tunnel layer.

  14. Anomalous Hall effect sensors based on magnetic element doped topological insulator thin films

    Science.gov (United States)

    Ni, Yan; Zhang, Zhen; Nlebedim, Ikenna; Jiles, David

    Anomalous Hall effect (AHE) is recently discovered in magnetic element doped topological insulators (TIs), which promises low power consumption highly efficient spintronics and electronics. This discovery broaden the family of Hall effect (HE) sensors. In this work, both HE and AHE sensor based on Mn and Cr doped Bi2Te3 TI thin films will be systematically studied. The influence of Mn concentration on sensitivity of MnxBi2-xTe3 HE sensors will be discussed. The Hall sensitivity increase 8 times caused by quantum AHE will be reported. AHE senor based on Cr-doped Bi2Te3 TI thin films will also be studied and compared with Mn doped Bi2Te3 AHE sensor. The influence of thickness on sensitivity of CrxBi2-xTe3 AHE sensors will be discussed. Ultrahigh Hall sensitivity is obtained in Cr doped Bi2Te3. The largest Hall sensitivity can reach 2620 Ω/T in sensor which is almost twice higher than that of the normal semiconductor HE sensor. Our work indicates that magnetic element doped topological insulator with AHE are good candidates for ultra-sensitive Hall effect sensors.

  15. Organogel-based thin films for self-cleaning on various surfaces.

    Science.gov (United States)

    Liu, Hongliang; Zhang, Pengchao; Liu, Mingjie; Wang, Shutao; Jiang, Lei

    2013-08-27

    Self-cleaning on various surfaces is obtained using the facile approach of modifying the surface with a thin organogel film. The film not only absorbs oil but also holds it in a crosslinked network, which endows the material with excellent self-cleaning properties. This facile method can be applied to various common engineering metals.

  16. Quantifying oxygen in paper-based cell cultures with luminescent thin film sensors.

    Science.gov (United States)

    Boyce, Matthew W; Kenney, Rachael M; Truong, Andrew S; Lockett, Matthew R

    2016-04-01

    Paper-based scaffolds are an attractive material for generating 3D tissue-like cultures because paper is readily available and does not require specialized equipment to pattern, cut, or use. By controlling the exchange of fresh culture medium with the paper-based scaffolds, we can engineer diffusion-dominated environments similar to those found in spheroids or solid tumors. Oxygen tension directly regulates cellular phenotype and invasiveness through hypoxia-inducible transcription factors and also has chemotactic properties. To date, gradients of oxygen generated in the paper-based cultures have relied on cellular response-based readouts. In this work, we prepared a luminescent thin film capable of quantifying oxygen tensions in apposed cell-containing paper-based scaffolds. The oxygen sensors, which are polystyrene films containing a Pd(II) tetrakis(pentafluorophenyl)porphyrin dye, are photostable, stable in culture conditions, and not cytotoxic. They have a linear response for oxygen tensions ranging from 0 to 160 mmHg O2, and a Stern-Volmer constant (K sv) of 0.239 ± 0.003 mmHg O2 (-1). We used these oxygen-sensing films to measure the spatial and temporal changes in oxygen tension for paper-based cultures containing a breast cancer line that was engineered to constitutively express a fluorescent protein. By acquiring images of the oxygen-sensing film and the fluorescently labeled cells, we were able to approximate the oxygen consumption rates of the cells in our cultures.

  17. Flexible thin-film battery based on solid-like ionic liquid-polymer electrolyte

    Science.gov (United States)

    Li, Qin; Ardebili, Haleh

    2016-01-01

    The development of high-performance flexible batteries is imperative for several contemporary applications including flexible electronics, wearable sensors and implantable medical devices. However, traditional organic liquid-based electrolytes are not ideal for flexible batteries due to their inherent safety and stability issues. In this study, a non-volatile, non-flammable and safe ionic liquid (IL)-based polymer electrolyte film with solid-like feature is fabricated and incorporated in a flexible lithium ion battery. The ionic liquid is 1-Ethyl-3-methylimidazolium dicyanamide (EMIMDCA) and the polymer is composed of poly(vinylidene fluoride-co-hexafluoropropene) (PVDF-HFP). The electrolyte exhibits good thermal stability (i.e. no weight loss up to 300 °C) and relatively high ionic conductivity (6 × 10-4 S cm-1). The flexible thin-film lithium ion battery based on solid-like electrolyte film is encapsulated using a thermal-lamination process and demonstrates excellent electrochemical performance, in both flat and bent configurations.

  18. Basella alba rubra spinach pigment-sensitized TiO2 thin film-based solar cells

    Science.gov (United States)

    Gokilamani, N.; Muthukumarasamy, N.; Thambidurai, M.; Ranjitha, A.; Velauthapillai, Dhayalan

    2015-03-01

    Nanocrystalline TiO2 thin films have been prepared by sol-gel dip coating method. The X-ray diffraction results showed that TiO2 thin films annealed at 400, 450 and 500 °C are of anatase phase and the peak corresponding to the (101) plane is present in all the samples. The grain size of TiO2 thin films was found to increase with increasing annealing temperature. The grain size is found to be 20, 25 and 33 nm for the films annealed at 400, 450 and 500 °C. The structure of the TiO2 nanocrystalline thin films have been examined by high-resolution transmission electron microscope, Raman spectroscopy and FTIR spectroscopy. TiO2 thin films were sensitized by natural dyes extracted from basella alba rubra spinach. It was found that the absorption peak of basella alba rubra extract is at about 665 nm. The dye-sensitized TiO2-based solar cell sensitized using basella alba rubra exhibited a J sc of 4.35 mA cm-2, V oc of 0.48 V, FF of 0.35 and efficiency of 0.70 %. Natural dyes as sensitizers for dye-sensitized solar cells are promising because of their environmental friendliness, low-cost production and fully biodegradable.

  19. Pt-based Thin Films as Efficient and Stable Catalysts for Oxygen Electroreduction

    DEFF Research Database (Denmark)

    Zamburlini, Eleonora

    at the cathode of Polymer Electrolyte Membrane Fuel Cells (PEMFCs). Herein the fabrication method, which consists of co-sputtering of thin films, is presented in detail, explaining the challenges one must face in order to fabricate oxygen-free Pt-lanthanides and Pt-early transition metals alloys...... 27 nm. A brief study was conducted at Stanford University, in collaboration with the Jaramillo group and SLAC, on Pt and Pt5Gd films deposited via evaporation. The results underlined the importance of an oxygen-free environment when dealing with Pt-lanthanides thin film fabrication....

  20. Solution-based synthesis of cobalt-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vempati, Sesha [School of Mathematics and Physics, Queen' s University Belfast, BT7 1NN (United Kingdom); Shetty, Amitha [Materials Research Center, Indian Institute of Science, Bangalore 560012 (India); Dawson, P., E-mail: p.dawson@qub.ac.uk [School of Mathematics and Physics, Queen' s University Belfast, BT7 1NN (United Kingdom); Nanda, K.K.; Krupanidhi, S.B. [Materials Research Center, Indian Institute of Science, Bangalore 560012 (India)

    2012-12-01

    Undoped and cobalt-doped (1-4 wt.%) ZnO polycrystalline, thin films have been fabricated on quartz substrates using sequential spin-casting and annealing of simple salt solutions. X-ray diffraction (XRD) reveals a wurzite ZnO crystalline structure with high-resolution transmission electron microscopy showing lattice planes of separation 0.26 nm, characteristic of (002) planes. The Co appears to be tetrahedrally co-ordinated in the lattice on the Zn sites (XRD) and has a charge of + 2 in a high-spin electronic state (X-ray photoelectron spectroscopy). Co-doping does not alter the wurzite structure and there is no evidence of the precipitation of cobalt oxide phases within the limits of detection of Raman and XRD analysis. Lattice defects and chemisorbed oxygen are probed using photoluminescence and Raman spectroscopy - crucially, however, this transparent semiconductor material retains a bandgap in the ultraviolet (3.30-3.48 eV) and high transparency (throughout the visible spectral regime) across the doping range. - Highlights: Black-Right-Pointing-Pointer Simple solution-based method for the fabrication of Co-doped ZnO thin films. Black-Right-Pointing-Pointer Evidence for Co substitution on Zn sites in + 2 oxidation state. Black-Right-Pointing-Pointer ZnO, with up to 4% Co doping, retains high transparency across visible spectrum. Black-Right-Pointing-Pointer Quenching of exciton photoluminescence linked to chemisorbed oxygen in Co-doped ZnO.

  1. Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films

    Directory of Open Access Journals (Sweden)

    Abdellah Boulouz

    2014-01-01

    Full Text Available The principal motivation of this work is the development and realization of smart cooling and sensors devices based on the elaborated and characterized semiconducting thermoelectric thin film materials. For the first time, the details design of our sensor and the principal results are published. Fabrication and characterization of Bi/Sb/Te (BST semiconducting thin films have been successfully investigated. The best values of Seebeck coefficient (α(T at room temperature for Bi2Te3, and (Bi1−xSbx2Te3 with x = 0.77 are found to be −220 µV/K and +240 µV/K, respectively. Fabrication and evaluation of performance devices are reported. 2.60°C of cooling of only one Peltier module device for an optimal current of Iopt=2.50 mA is obtained. The values of temperature measured by infrared camera, by simulation, and those measured by the integrated and external thermocouple are reported. A sensitivity of the sensors of 5 mV Torr−1 mW−1 for the pressure sensor has been found with a response time of about 600 ms.

  2. Voltage controlled exchange bias in an all-thin-film Cr2O3 based heterostructure

    Science.gov (United States)

    Echtenkamp, Will; Binek, Christian

    2014-03-01

    Spintronics utilizes the electron's spin degree of freedom for an advanced generation of electronic devices with novel functionalities. Controlling magnetism by electrical means has been identified as a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Previously, robust isothermal electric control of exchange bias has been achieved near room temperature utilizing a bulk single crystal of Cr2O3. In this study electric control of exchange bias in an all-thin-film system is demonstrated with significant implications for device realization. In particular, voltage controlled switching of exchange bias in a Cr2O3 based magnetoelectric magnetic tunnel junction enables nonvolatile memory storage with virtually dissipationless writing at, or above, room temperature. Additionally, unique physical properties which arise due to the Cr2O3 thin film geometry are highlighted. This project is supported by NSF through MRSEC DMR 0213808, by the NRC/NRI supplement to MRSEC, and by CNFD and C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program.

  3. Thin Film Inorganic Electrochemical Systems.

    Science.gov (United States)

    1995-07-01

    determined that thin film cathodes of LiCoO2 can be readily performed by either spray pyrolysis or spin coating . These cathodes are electrochemically...active. We have also determined that thin film anodes of Li4Ti5O12 can be prepared by spray pyrolysis or spin coating . These anodes are also

  4. Anisotropic ferromagnetic behaviors in highly orientated epitaxial NiO-based thin films

    Directory of Open Access Journals (Sweden)

    Yu-Jun Zhang

    2015-07-01

    Full Text Available Antiferromagnetic materials attract a great amount of attention recently for promising antiferromagnet-based spintronics applications. NiO is a conventional antiferromagnetic semiconductor material and can show ferromagnetism by doping other magnetic elements. In this work, we synthesized epitaxial Fe-doped NiO thin films on SrTiO3 substrates with various crystal orientations by pulsed laser deposition. The room-temperature ferromagnetism of these films is anisotropic, including the saturated magnetization and the coercive field. The anisotropic magnetic behaviors of Fe-doped NiO diluted magnetic oxide system should be closely correlated to the magnetic structure of antiferromagnetic NiO base. Within the easy plane of NiO, the coercive field of the films becomes smaller, and larger coercive field while tested out of the easy plane of NiO. The saturated magnetization anisotropy is due to different strain applied by different substrates. These results lead us to more abundant knowledge of the exchange interactions in this conventional antiferromagnetic system.

  5. Geometric pre-patterning based tuning of the period doubling onset strain during thin film wrinkling

    Energy Technology Data Exchange (ETDEWEB)

    Saha, Sourabh K. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2017-02-16

    Wrinkling of supported thin films is an easy-to-implement and low-cost fabrication technique for generation of stretch-tunable periodic micro and nano-scale structures. However, the tunability of such structures is often limited by the emergence of an undesirable period doubled mode at high strains. Predictively tuning the onset strain for period doubling via existing techniques requires one to have extensive knowledge about the nonlinear pattern formation behavior. Herein, a geometric pre-patterning based technique is introduced to delay the onset of period doubling that can be implemented to predictively tune the onset strain even with limited system knowledge. The technique comprises pre-patterning the film/base bilayer with a sinusoidal pattern that has the same period as the natural wrinkle period of the system. The effectiveness of this technique has been verified via physical and computational experiments on the polydimethylsiloxane/glass bilayer system. It is observed that the period doubling onset strain can be increased from the typical value of 20% for flat films to greater than 30% with a modest pre-pattern aspect ratio (2∙amplitude/period) of 0.15. In addition, finite element simulations reveal that (i) the onset strain can be increased up to a limit by increasing the amplitude of the pre-patterns and (ii) the delaying effect can be captured entirely by the pre-pattern geometry. As a result, one can implement this technique even with limited system knowledge, such as material properties or film thickness, by simply replicating pre-existing wrinkled patterns to generate prepatterned bilayers. Thus, geometric pre-patterning is a practical scheme to suppress period doubling that can increase the operating range of stretch-tunable wrinkle-based devices by at least 50%.

  6. A kinetics study on promising hydrogen storage properties of Mg-based thin films at room temperature.

    Science.gov (United States)

    Qu, Jianglan; Liu, Yang; Xin, Gongbiao; Zheng, Jie; Li, Xingguo

    2014-04-21

    Pd-Mg-Pd thin films with variable thickness of Mg layers were prepared. Their optical and electrical changes in both gasochromic and chemochromic processes were compared to investigate the kinetics of Mg-based thin films at room temperature. Hydrogen absorption and desorption kinetics of Pd-Mg-Pd thin films were strongly dependent on the thickness of the Mg layer. Especially, when the thickness was lowered to 60 nm, a MgH2 layer formed immediately after exposure to H2 at room temperature, while a Mg layer was rapidly generated during hydrogen desorption in ambient air. By means of optical and electrical resistance measurements, we found that the diffusion process contributed significantly to hydrogen absorption and desorption. The remarkable absorption and desorption kinetics at room temperature reported here suggested promising applications in Mg-based energy-efficient devices and hydrogen sensors.

  7. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  8. TiO(2)/LiCl-based nanostructured thin film for humidity sensor applications.

    Science.gov (United States)

    Buvailo, Andrii I; Xing, Yangjun; Hines, Jacqueline; Dollahon, Norman; Borguet, Eric

    2011-02-01

    A simple and straightforward method of depositing nanostructured thin films, based on LiCl-doped TiO(2), on glass and LiNbO(3) sensor substrates is demonstrated. A spin-coating technique is employed to transfer a polymer-assisted precursor solution onto substrate surfaces, followed by annealing at 520°C to remove organic components and drive nanostructure formation. The sensor material obtained consists of coin-shaped nanoparticles several hundred nanometers in diameter and less than 50 nm thick. The average thickness of the film was estimated by atomic force microscopy (AFM) to be 140 nm. Humidity sensing properties of the nanostructured material and sensor response times were studied using conductometric and surface acoustic wave (SAW) sensor techniques, revealing reversible signals with good reproducibility and fast response times of about 0.75 s. The applicability of this nanostructured film for construction of rapid humidity sensors was demonstrated. Compared with known complex and expensive methods of synthesizing sophisticated nanostructures for sensor applications, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), this work presents a relatively simple and inexpensive technique to produce SAW humidity sensor devices with competitive performance characteristics.

  9. Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin films.

    Science.gov (United States)

    Huang, Chia-Cheng; Wang, Fang-Hsing; Wu, Chia-Ching; Huang, Hong-Hsin; Yang, Cheng-Fu

    2013-05-01

    In this study, radio frequency magnetron sputtering was used to deposit nickel oxide thin films (NiO, deposition power of 100 W) and titanium-doped zinc oxide thin films (TZO, varying deposition powers) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. The structural, optical, and electrical properties of the TZO and NiO thin films and NiO/TZO heterojunction devices were investigated with scanning electron microscopy, X-ray diffraction (XRD) patterns, UV-visible spectroscopy, Hall effect analysis, and current-voltage (I-V) analysis. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of TZO were observable in the NiO/TZO heterojunction devices, indicating that the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. When the sputtering deposition power for the TZO thin films was 100, 125, and 150 W, the I-V characteristics confirmed that a p-n junction characteristic was successfully formed in the NiO/TZO heterojunction devices. We show that the NiO/TZO heterojunction diode was dominated by the space-charge limited current theory.

  10. Indium oxide thin film based ammonia gas and ethanol vapour sensor

    Indian Academy of Sciences (India)

    K K Makhija; Arabinda Ray; R M Patel; U B Trivedi; H N Kapse

    2005-02-01

    A sensor for ammonia gas and ethanol vapour has been fabricated using indium oxide thin film as sensing layer and indium tin oxide thin film encapsulated in poly(methyl methacrylate) (PMMA) as a miniature heater. For the fabrication of miniature heater indium tin oxide thin film was grown on special high temperature corning glass substrate by flash evaporation method. Gold was deposited on the film using thermal evaporation technique under high vacuum. The film was then annealed at 700 K for an hour. The thermocouple attached on sensing surface measures the appropriate operating temperature. The thin film gas sensor for ammonia was operated at different concentrations in the temperature range 323–493 K. At 473 K the sensitivity of the sensor was found to be saturate. The detrimental effect of humidity on ammonia sensing is removed by intermittent periodic heating of the sensor at the two temperatures 323K and 448 K, respectively. The indium oxide ethanol vapour sensor operated at fixed concentration of 400 ppm in the temperature range 293–393 K. Above 373 K, the sensor conductance was found to be saturate. With various thicknesses from 150–300 nm of indium oxide sensor there was no variation in the sensitivity measurements of ethanol vapour. The block diagram of circuits for detecting the ammonia gas and ethanol vapour has been included in this paper.

  11. Polyimide Aerogel Thin Films

    Science.gov (United States)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  12. Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application

    NARCIS (Netherlands)

    Tripathi, A.K.; Smits, E.C.P.; Putten, J.B.P.H. van der; Neer, M. van; Myny, K.; Nag, M.; Steudel, S.; Vicca, P.; O'Neill, K.; Veenendaal, E. van; Genoe, G.; Heremans, P.; Gelinck, G.H.

    2011-01-01

    In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 µm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The

  13. Chemical gas sensor application of open-pore mesoporous thin films based on integrated optical polarimetric interferometry.

    Science.gov (United States)

    Qi, Zhi-Mei; Honma, Itaru; Zhou, Haoshen

    2006-02-15

    Chemical gas sensors that employ integrated optical polarimetric interferometry were fabricated by the sol-gel synthesis of transparent mesoporous thin films of TiO2-P2O5 nanocomposite on tapered layers of TiO2 sputtered on tin-diffused glass waveguides. Atomic force microscopy images of the mesoporous thin film clearly show the open pore mouths on the film surface that favor rapid diffusion and adsorption of gas-phase analytes within the entire film. Adsorption of gas and vapor induces changes (Deltan) in the refractive index of the mesoporous thin film that lead to shifts in the phase difference between the fundamental transverse electric and magnetic modes simultaneously excited in the glass waveguide via single-beam incidence. Upon exposure to NH3 gas at concentrations as low as 100 ppb in dry air at room temperature, the sensor exhibits a reversible change in the phase difference with the response and recovery times of less than 60 and 90 s, respectively. It is unexpected that the sensor is unresponsive to either NO2 or C6H6 vapor, leading to a somewhat selective sensitivity to NH3. Determination of Deltan was carried out with a combination of the experimental results and the theoretical calculations. The sensor design represents a novel, effective, and easily accessible approach to mesoporous thin-film-based integrated optical chemical sensors.

  14. Thin films for micro solid oxide fuel cells

    Science.gov (United States)

    Beckel, D.; Bieberle-Hütter, A.; Harvey, A.; Infortuna, A.; Muecke, U. P.; Prestat, M.; Rupp, J. L. M.; Gauckler, L. J.

    Thin film deposition as applied to micro solid oxide fuel cell (μSOFC) fabrication is an emerging and highly active field of research that is attracting greater attention. This paper reviews thin film (thickness ≤1 μm) deposition techniques and components relevant to SOFCs including current research on nanocrystalline thin film electrolyte and thin-film-based model electrodes. Calculations showing the geometric limits of μSOFCs and first results towards fabrication of μSOFCs are also discussed.

  15. Optical waveguide BTX gas sensor based on polyacrylate resin thin film.

    Science.gov (United States)

    Kadir, Razak; Yimit, Abliz; Ablat, Hayrensa; Mahmut, Mamtimin; Itoh, Kiminori

    2009-07-01

    An optical sensor sensitive to BTX has been developed by spin coating a thin film of polyacrylate resin onto a tin- diffused glass optical waveguide. A pair of prism coupler was employed for optical coupling matched with diiodomethane (CH2l2). The guided wave transmits in waveguide layer and passes through the film as an evanescent wave. Polyacrylate film has a strong capacity of absorbing oil gases. The film is stable in N2 but benzene exposure at room temperature can result in rapid and reversible changes of transmittance (7) and refractive index (n1) of this film. It has been demonstrated that the sensor containing a 10 mm boardand about a hundred nanometers thick resin film can detect lower than 8 ppm BTX.

  16. Fano resonance-based highly sensitive, compact temperature sensor on thin film lithium niobate.

    Science.gov (United States)

    Qiu, Wentao; Ndao, Abdoulaye; Vila, Venancio Calero; Salut, Roland; Courjal, Nadège; Baida, Fadi Issam; Bernal, Maria-Pilar

    2016-03-15

    In this Letter, we report a Fano resonance-based highly sensitive and compact temperature sensor fabricated on thin film lithium niobate (TFLN) Suzuki phase lattice (SPL) photonic crystal. The experimental sensitivity is estimated to be 0.77 nm/°C with a photonic crystal size of only 25  μm × 24  μm. This sensitivity is 38 times larger than the intrinsic one of lithium niobate which is 0.02 nm/°C. The demonstrated sharp and high extinction ratio characteristics of the Fano lineshape resonance could be an excellent candidate in developing a high sensitivity temperature sensor, electric field sensor, etc.

  17. Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

    Science.gov (United States)

    Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

    2017-01-01

    Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design. PMID:28145438

  18. Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

    Science.gov (United States)

    Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

    2017-02-01

    Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.

  19. Polymer thin-film transistor based on a high dielectric constant gate insulator

    Institute of Scientific and Technical Information of China (English)

    Lü Wen; Peng Jun-Biao; Yang Kai-Xia; Lan Lin-Feng; Niu Qiao-Li; Cao Yong

    2007-01-01

    In this paper full polymer thin-film transistors (PTFTs) based on Poly (acrylonitrile) (PAN) as the gate dielectric and poly (2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene-vinylene) (MEH-PPV) as the semiconductor layer were investigated by using different channel width/length ratios. Relatively high dielectric constant of the polymer dielectric layer (6.27) can remarkably reduce the threshold voltage of the transistors to below-3 V. Hole field-effect mobility of MEH-PPV of the PTFTs was about 4.8 × 10-4 cm2/Vs, and on/off current ratio was larger than 102, which was comparable with that of transistors with widely used Poly (4-vinyl phenol) (PVP) or SiO2 as gate dielectrics.

  20. Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors.

    Science.gov (United States)

    Kim, Bongjun; Geier, Michael L; Hersam, Mark C; Dodabalapur, Ananth

    2017-02-01

    Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.

  1. Photonic-crystal switch divider based on Ge2Sb2Te5 thin films.

    Science.gov (United States)

    Ma, Beijiao; Zhang, Peiqing; Wang, Hui; Zhang, Tengyu; Zeng, Jianghui; Zhang, Qian; Wang, Guoxiang; Xu, Peipeng; Zhang, Wei; Dai, Shixun

    2016-11-10

    A three-port phase-change photonic-crystal switch divider based on Ge2Sb2Te5 chalcogenide thin film was proposed. The chalcogenide material used was determined to have a high refractive index and fast phase-change speed by using laser radiation. The structure with a T-junction cavity was used to achieve three switch functions: switching "ON" in only one output port, switching "OFF" in both output ports, and dividing signals into two output ports. The transmission properties of the designed device at 2.0 μm were studied by the finite difference time domain method, which showed that the switch divider can achieve very high switching efficiency by optimizing T-junction cavity parameters. The scaling laws of photonic crystals revealed that the operating wavelength of the designed structure can be easily extended to another wavelength in the midinfrared region.

  2. Cross-linked PAN-based thin-film composite membranes for non-aqueous nanofiltration

    KAUST Repository

    Pérez-Manríquez, Liliana

    2015-01-01

    A new approach on the development of cross-linked PAN based thin film composite (TFC) membranes for non-aqueous application is presented in this work. Polypropylene backed neat PAN membranes fabricated by phase inversion process were cross-linked with hydrazine to get excellent solvent stability toward dimethylformamide (DMF). By interfacial polymerization a selective polyamide active layer was coated over the cross-linked PAN using N,N′-diamino piperazine (DAP) and trimesoyl chloride (TMC) as monomers. Permeation and molecular weight cut off (MWCO) experiments using various dyes were done to evaluate the performance of the membranes. Membranes developed by such method show excellent solvent stability toward DMF with a permeance of 1.7 L/m2 h bar and a molecular weight cut-off of less than 600 Da.

  3. Nanoporous membrane based on block copolymer thin film for protein drug delivery

    Science.gov (United States)

    Yang, Seung Yun; Yang, Jeong-A.; Kim, Eung-Sam; Jeon, Gumhye; Oh, Eun Ju; Choi, Kwan Yong; Hahn, Sei Kwang; Kim, Jin Kon

    2010-03-01

    We studied long term and controlled release of protein drugs by using nanoporous membranes with various pore sizes. Nanoporous membrane consists of the separation layer prepared by polystyrene-block-poly(methylmethacrylate) copolymer thin film and conventional microfiltration membrane as a support. We demonstrate a long-term constant in vitro release of bovine serum albumin (BSA)and human growth hormone ) (hGH) without their denaturation up to 2 months. A nearly constant serum concentration of hGH was maintained up to 3 weeks in SD rats. The long-term constant delivery based on this membrane for protein drugs within the therapeutic range can be highly appreciated for the patients with hormone- deficiency.

  4. Thermochromic vanadium-dioxide-based thin films and nanoparticles: Survey of some buildings-related advances

    Science.gov (United States)

    Granqvist, Claes G.; Ji, Yu-Xia; Montero, José; Niklasson, Gunnar A.

    2016-10-01

    Today's architecture uses large glazings (windows and glass facades) to obtain good indoors-outdoors contact and day-lighting. However glazings offer challenges and often lead to excessive solar energy inflow and thereby a need for energy-demanding space cooling. This paper summarizes recent work on thermochromic (TC) materials intended for energy-efficient buildings and outlines how vanadium-dioxide-based thin films and nanoparticle composites can be used in TC glazings which admit more solar energy below a comfort temperature than above this temperature, so that the cooling need is diminished, while the transmittance of visible light remains high. We also report on some very recent work on TC light scattering.

  5. Low-voltage Driving Phototransistor Based on Dye-sensitized Nanocrystalline Titanium Dioxide Thin Films

    CERN Document Server

    Wang, Xiaoqi; Cai, Chuanbing

    2012-01-01

    Photo-gated transistors based on dye-sensitized nanocrystalline titanium dioxide thin film are established. A transistor-like transport behavior characterized by the linear increase, saturated plateau, and breakdown-like increase in the voltage-current curve is achievable with a low driven bias for the present device. The response current exhibits a linear dependence on the intensity of gated light, and the measured maximum photosensitivity is approximately 0.1 A/W. The dynamic responses for various light frequencies and their dependences on the load resistances are investigated as well. The cut-off frequency of ~50 Hz is abstracted, indicating the potential application for economical and efficient light switch or optical communication unit. The dc photo-gated response is explained by the energy level diagram, and is numerically simulated by an equivalent circuit model, suggesting a clear correlation between photovoltaic and photoconductive behaviors as well as their optical responses.

  6. Zinc-Based Semiconductors/Polymer Thin Films Junction for Photovoltaic Application

    OpenAIRE

    Souad Al-bat’hi; K. A. Buhari; M. I. Latiff

    2012-01-01

    Thin films of ZnO and ZnTe semiconductors were deposited on ITO conducting glass substrates by sputtering and electrodeposition techniques, respectively. On the other hand, thin films of ion conducting solid polymer electrolyte were prepared by solution cast technique. The polymer is a blend of 50 wt% polyethylene oxide and 50 wt% chitosan. To provide redox couple (I−/I3−), the polymer was complexed with ammonium iodide NH4I with addition of few crystals of iodine I2. Ammonium iodide NH4I was...

  7. WO{sub 3} thin film based multiple sensor array for electronic nose application

    Energy Technology Data Exchange (ETDEWEB)

    Ramgir, Niranjan S., E-mail: niranjanpr@yahoo.com, E-mail: deepakcct1991@gmail.com; Goyal, C. P.; Datta, N.; Kaur, M.; Debnath, A. K.; Aswal, D. K.; Gupta, S. K. [Thin Film Devices Section, Technical Physics Division, Bhabha Atomic Research Centre, Mumbai–400085 (India); Goyal, Deepak, E-mail: niranjanpr@yahoo.com, E-mail: deepakcct1991@gmail.com [Thin Film Devices Section, Technical Physics Division, Bhabha Atomic Research Centre, Mumbai–400085 (India); Centre for Converging Technologies, University of Rajasthan, Jaipur-302004 (India)

    2015-06-24

    Multiple sensor array comprising 16 x 2 sensing elements were realized using RF sputtered WO{sub 3} thin films. The sensor films were modified with a thin layer of sensitizers namely Au, Ni, Cu, Al, Pd, Ti, Pt. The resulting sensor array were tested for their response towards different gases namely H{sub 2}S, NH{sub 3}, NO and C{sub 2}H{sub 5}OH. The sensor response values measured from the response curves indicates that the sensor array generates a unique signature pattern (bar chart) for the gases. The sensor response values can be used to get both qualitative and quantitative information about the gas.

  8. Multianalyte Biosensors for the Simultaneous Determination of Glucose and Galactose Based on Thin Film Electrodes

    Institute of Scientific and Technical Information of China (English)

    Neng Qin JIA; Zong Rang ZHANG; Jiang Zhong ZHU; Guo Xiong ZHANG

    2004-01-01

    A multianalyte biosensor for the simultaneous determination of glucose and galactose was developed by immobilizing glucose oxidase (GOD) and galactose oxidase (GAO) on Nafion-modified thin film platinum disk electrodes. The dual Pt working electrodes with disk shape and the surrounding ring shaped counter electrode were fabricated by thin film technology, which were integrated onto the same microchip. The response of the designed biosensor for glucose and galactose were linear up to 6.0 mmol/L and 3.5 mmol/L with sensitivities of 0.3 (A/mmol/L and 0.12 μA/mmol/L, respectively. No cross-talking effect was observed.

  9. High field transport properties of MBE processed Fe-based superconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Iida, Kazumasa [Nagoya University (Japan); IFW Dresden (Germany)

    2015-07-01

    It has been reported that Fe-based superconductors show high upper critical fields with low anisotropies at low temperatures. Hence these materials may offer a unique possibility for high field magnet applications. However, only a few reports on high-field transport properties of Co-doped Ba-122 and Fe(Se,Te) have been published and the only one for SmFeAs(O,F) thin films to date. In order to use this material class for applications, the knowledge of in-field and its orientation dependence of transport properties in a wide range of external fields need to be clarified. In this talk, I will report on high-field (up to dc 45 T) transport properties of P-doped Ba-122, SmFeAs(O,F) and NdFeAs(O,F) thin films prepared by MBE. Although P-doped Ba-122 has the lowest T{sub c}, self-field J{sub c} of over 6 MA/cm{sup 2} at 4.2 K is recorded, which is the highest value ever reported in Fe-based superconductors. Additionally, in-field performance of P-doped Ba-122 shows comparable to those of NdFeAs(O,F) and SmFeAs(O,F) for Hc. On the other hand, both NdFeAs(O,F) and SmFeAs(O,F) exhibited higher J{sub c} for H parallel ab due to the intrinsic pinning. These results indicate that P-doped Ba-122 is the most promising candidates for high-field magnet applications.

  10. Parametric optimization of Nd-YVO4 laser for straight scribing on silver nanowire based conductive thin films by Taguchi method

    Science.gov (United States)

    Chuang, Ho-Chiao; Lee, Wen-Fu

    2014-04-01

    This study presents parameter optimization of laser scribing on silver nanowire based conductive thin films and a high-precision Nd-YVO4 (wavelength, 532 nm) laser is used to perform scribing experiments to replace the traditional wet etching process. The laser beam is directly focused on conductive thin films and vaporizes the silver nanowire which is coated on the thin film; consequently it is a non-polluting processes. The main objective of this study is to perform laser scribing experiments to cut off the silver nanowire on the thin film without damaging the flexible PET (Polyethylene terephthalate) substrate.

  11. UV-assisted room-temperature chemiresistive NO2 sensor based on TiO2 thin film.

    Science.gov (United States)

    Xie, Ting; Sullivan, Nichole; Steffens, Kristen; Wen, Baomei; Liu, Guannan; Debnath, Ratan; Davydov, Albert; Gomez, Romel; Motayed, Abhishek

    TiO2 thin film based, chemiresistive sensors for NO2 gas which operate at room temperature under ultraviolet (UV) illumination have been demonstrated in this work. The rf-sputter deposited and post-annealed TiO2 thin films have been characterized by atomic force microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction to obtain surface morphology, chemical state, and crystal structure, respectively. UV-vis absorption spectroscopy and Tauc plots show the optical properties of the TiO2 films. Under UV illumination, the NO2 sensing performance of the TiO2 films shows a reversible change in resistance at room-temperature. The observed change in electrical resistivity can be explained by the modulation of surface-adsorbed oxygen. This work is the first demonstration of a facile TiO2 sensor for NO2 analyte that operates at room-temperature under UV illumination.

  12. UV-assisted room-temperature chemiresistive NO2 sensor based on TiO2 thin film

    Science.gov (United States)

    Xie, Ting; Sullivan, Nichole; Steffens, Kristen; Wen, Baomei; Liu, Guannan; Debnath, Ratan; Davydov, Albert; Gomez, Romel; Motayed, Abhishek

    2015-01-01

    TiO2 thin film based, chemiresistive sensors for NO2 gas which operate at room temperature under ultraviolet (UV) illumination have been demonstrated in this work. The rf-sputter deposited and post-annealed TiO2 thin films have been characterized by atomic force microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction to obtain surface morphology, chemical state, and crystal structure, respectively. UV-vis absorption spectroscopy and Tauc plots show the optical properties of the TiO2 films. Under UV illumination, the NO2 sensing performance of the TiO2 films shows a reversible change in resistance at room-temperature. The observed change in electrical resistivity can be explained by the modulation of surface-adsorbed oxygen. This work is the first demonstration of a facile TiO2 sensor for NO2 analyte that operates at room-temperature under UV illumination. PMID:26681838

  13. Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors

    KAUST Repository

    Mejia, Israel I.

    2013-01-01

    We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.

  14. Evolution of structure and electrical properties with annealing time in solution-based VO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Yuxian, E-mail: guo_yuxian@163.com [School of Mathematics and Physics, Anhui Jianzhu University, Hefei 230022, Anhui (China); Xu, Haiyan [School of Materials and Chemical Engineering, Anhui Jianzhu University, Hefei 230022, Anhui (China); Zou, Chongwen, E-mail: czou@ustc.edu.cn [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, Anhui (China); Yang, Zhiyun [School of Mathematics and Physics, Anhui Jianzhu University, Hefei 230022, Anhui (China); Tong, Bin [School of Materials and Chemical Engineering, Anhui Jianzhu University, Hefei 230022, Anhui (China); Yu, Jiangying; Zhang, Youjie; Zhao, Li; Wang, Yaling [School of Mathematics and Physics, Anhui Jianzhu University, Hefei 230022, Anhui (China)

    2015-02-15

    Highlights: • VO{sub 2} films were grown on Al{sub 2}O{sub 3}(0 0 0 1) using sol-gel and vacuum annealing process. • The films transformed from V{sub 2}O{sub 3} to V{sub 3}O{sub 5}, and then to VO{sub 2} with prolonged annealing. • The VO{sub 2} films with longer annealing time showed higher film quality. • The lower phase transition temperature can be achieved by longer annealing. • A self-reduction mechanism was experimentally revealed in terms of Raman results. - Abstract: Vanadium dioxide (VO{sub 2}) thin films were prepared on c-sapphire substrates by using an easy sol-gel method and sequential vacuum annealing process. The effects of annealing time on the structure, morphology and phase transition properties were investigated. The results show that, with the extended annealing time from 1 h to 7 h, the films have transformed from V{sub 2}O{sub 3} to V{sub 3}O{sub 5}, and then VO{sub 2}. The VO{sub 2} thin films prepared with the annealing time of 4 h or 7 h display good phase transition property with the resistance change up to 3 orders of magnitude. Furthermore, the 7 h-sintered film has better growth orient, bigger grain size and lower phase transition temperature comparing with the 4 h-sintered film. It is suggested that, the prolonged annealing treatment will be in favor of the crystal film quality and enhance the related phase transition property for the solution-based VO{sub 2} films. Based on the Raman results, we have discussed the possible reactions and evolution mechanisms during the VO{sub 2} film preparation with different annealing time.

  15. Positron depth profiling of the structural and electronic structure transformations of hydrogenated Mg-based thin films

    NARCIS (Netherlands)

    Eijt, S.W.H.; Kind, R.; Singh, S.; Schut, H.; Legerstee, W.J.; Hendrikx, R.W.A.; Svetchnikov, V.L.; Westerwaal, R.J.; Dam, B.

    2009-01-01

    We report positron depth-profiling studies on the hydrogen sorption behavior and phase evolution of Mg-based thin films. We show that the main changes in the depth profiles resulting from the hydrogenation to the respective metal hydrides are related to a clear broadening in the observed electron mo

  16. A thin-film magnetoresistive angle detector

    NARCIS (Netherlands)

    Eijkel, Kees J.M.; Wieberdink, Johan W.; Fluitman, Jan H.J; Popma, Theo J.A.; Groot, Peter; Leeuwis, Henk

    1990-01-01

    An overview is given of the results of our research on a contactless angle detector based on the anisotropic magnetoresistance effect (AMR effect) in a permalloy thin film. The results of high-temperature annealing treatment of the pemalloy film are discussed. Such a treatment suppresses the effects

  17. Development and evaluation of gallium nitride-based thin films for x-ray dosimetry.

    Science.gov (United States)

    Hofstetter, Markus; Howgate, John; Sharp, Ian D; Stutzmann, Martin; Thalhammer, Stefan

    2011-06-07

    X-ray radiation plays an important role in medical procedures ranging from diagnostics to therapeutics. Due to the harm such ionizing radiation can cause, it has become common practice to closely monitor the dosages received by patients. To this end, precise online dosimeters have been developed with the dual objectives of monitoring radiation in the region of interest and improving therapeutic methods. In this work, we evaluate GaN thin film high electron mobility heterostructures with sub-mm(2) detection areas as x-ray radiation detectors. Devices were tested using 40-300 kV Bremsstrahlung x-ray sources. We find that the photoconductive device response exhibits a large gain, is almost independent of the angle of irradiation, and is constant to within 2% of the signal throughout this medical diagnostic x-ray range, indicating that these sensors do not require recalibration for geometry or energy. Furthermore, the devices show a high sensitivity to x-ray intensity and can measure in the air kerma rate (free-in-air) range of 1 µGy s(-1) to 10 mGy s(-1) with a signal stability of ±1% and a linear total dose response over time. Medical conditions were simulated by measurements of device responses to irradiation through human torso phantoms. Direct x-ray imaging is demonstrated using the index finger and wrist sections of a human phantom. The results presented here indicate that GaN-based thin film devices exhibit a wide range of properties, which make them promising candidates for dosimetry applications. In addition, with potential detection volumes smaller than 10(-6) cm(3), they are well suited for high-resolution x-ray imaging. Moreover, with additional engineering steps, these devices can be adapted to potentially provide both in vivo biosensing and x-ray dosimetry.

  18. Development and evaluation of gallium nitride-based thin films for x-ray dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Hofstetter, Markus; Thalhammer, Stefan [Helmholtz Zentrum Muenchen, Ingolstaedter Landstrasse 1, 85764 Neuherberg (Germany); Howgate, John; Sharp, Ian D; Stutzmann, Martin, E-mail: stefan.thalhammer@helmholtz-muenchen.de [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching (Germany)

    2011-06-07

    X-ray radiation plays an important role in medical procedures ranging from diagnostics to therapeutics. Due to the harm such ionizing radiation can cause, it has become common practice to closely monitor the dosages received by patients. To this end, precise online dosimeters have been developed with the dual objectives of monitoring radiation in the region of interest and improving therapeutic methods. In this work, we evaluate GaN thin film high electron mobility heterostructures with sub-mm{sup 2} detection areas as x-ray radiation detectors. Devices were tested using 40-300 kV Bremsstrahlung x-ray sources. We find that the photoconductive device response exhibits a large gain, is almost independent of the angle of irradiation, and is constant to within 2% of the signal throughout this medical diagnostic x-ray range, indicating that these sensors do not require recalibration for geometry or energy. Furthermore, the devices show a high sensitivity to x-ray intensity and can measure in the air kerma rate (free-in-air) range of 1 {mu}Gy s{sup -1} to 10 mGy s{sup -1} with a signal stability of {+-}1% and a linear total dose response over time. Medical conditions were simulated by measurements of device responses to irradiation through human torso phantoms. Direct x-ray imaging is demonstrated using the index finger and wrist sections of a human phantom. The results presented here indicate that GaN-based thin film devices exhibit a wide range of properties, which make them promising candidates for dosimetry applications. In addition, with potential detection volumes smaller than 10{sup -6} cm{sup 3}, they are well suited for high-resolution x-ray imaging. Moreover, with additional engineering steps, these devices can be adapted to potentially provide both in vivo biosensing and x-ray dosimetry.

  19. Synthesis of novel strontium-based cuprate superconducting thin films, and the relationship between their crystal structures and electrical properties

    Science.gov (United States)

    Chang, Kuo-Wei

    2000-12-01

    Novel Sr-based cuprate thin films were investigated to explore their potential as next generation superconducting materials. Thin films of infinite-layer compound (Sr,Ca)CuO2 (no blocking layer), cuprate oxycarbonate Sr2CuO2(CO3) (carbonate blocking layer), and Tl(Sr,Ba)2Can-1CunOy (n = 2 and 3) (thin blocking layer) were synthesized using metal-organic chemical vapor deposition. The structure and defect chemistry of the blocking layers of these cuprate compounds were found to have profound effects on the transport properties both in the normal state and the superconducting state. Phase pure, epitaxial infinite-layer compound (Sr1-xCa x)CuO2 thin films were deposited on SrTiO3(100) substrates. However, these films were always semiconducting with resistivities of the order of 1 ohm- cm and with carrier concentrations of 1017~10 19cm-3, which is two to four orders of magnitude lower than the typical superconducting cuprates. The low carrier concentration was attributed to the absence of blocking layers containing a sufficient concentration of charged defects. Transport was via variable range hopping conduction. By annealing in air, the infinite-layer compound SrCuO2 thin films reacted with the CO2 in air to generate Sr 2CuO2(CO3) thin films. Upon formation of carbonate blocking layers, charger carriers were introduced into the Sr2CuO 2(CO3) thin films through the partial substitution of carbon by copper or boron in the SrCO3 blocking layers. After oxygen annealing or upon boron substitution, the carrier concentration increased up to 10 21 cm-3. A superconducting onset temperature of 34K and a zero resistivity temperature of 20K have been observed for Sr 2CuO2(C1-xBx)O3 thin films. A critical carrier density of 0.10~0.12 holes/Cu was required to render superconductivity. The effect of crystal structure on the critical current density was investigated by measuring the vortex pinning energies of Tl2Ba2CaCu 2Oy (Tl-2212) and Tl(Sr,Ba)2Ca Cu2O y (Tl- (Sr,Ba)1212) thin

  20. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sammelselg, Väino, E-mail: vaino.sammelselg@ut.ee [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia); Institute of Chemistry, University of Tartu, Ravila 14a, 50411 Tartu (Estonia); Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia)

    2013-09-02

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H{sub 2}SO{sub 4} was studied. • Smallest etching rates of < 5 pm/s for TiO{sub 2}, Al{sub 2}O{sub 3}, and Cr{sub 2}O{sub 3} were reached. • Highest etching rate of 2.8 nm/s for Al{sub 2}O{sub 3} was occurred. • Remarkable differences in etching of non- and crystalline films were observed.

  1. Performance analysis of resistive switching devices based on BaTiO3 thin films

    Science.gov (United States)

    Samardzic, Natasa; Kojic, Tijana; Vukmirovic, Jelena; Tripkovic, Djordjije; Bajac, Branimir; Srdic, Vladimir; Stojanovic, Goran

    2016-03-01

    Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of ̴100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.

  2. Thin-Film LSCs Based on PMMA Nanohybrid Coatings: Device Optimization and Outdoor Performance

    Directory of Open Access Journals (Sweden)

    S. M. El-Bashir

    2013-01-01

    Full Text Available This study concerns the design optimization of thin-film luminescent solar concentrators (TLSCs based on polymethylmethacrylate (PMMA/silica nanohybrid films doped with coumarin dyestuffs specialized in coloring plastics. Two designs of TLSCs had been prepared and characterized. The first consists of a transparent nanohybrid layer coated on a fluorescent PMMA substrate. The second design is the ordinary configuration in which fluorescent nanohybrid layer is coated on a transparent PMMA substrate. The investigation of the spectral properties and efficiency parameters recommended the best solar energy conversion efficiency for the second design. The outdoor performance of optimized TLSC was also evaluated under clear sky conditions of Riyadh city, and the hourly values of the optical efficiency, ηopt, were calculated for one year. The best performance was achieved in summer since the short circuit current for PV cell was doubled after being attached to TLSC and the value of ηopt reached 40% which is higher than other values recorded before due to the abundant solar energy potential in the Arabian Peninsula.

  3. Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films

    Science.gov (United States)

    Loisel, Loïc; Florea, Ileana; Cojocaru, Costel-Sorin; Tay, Beng Kang; Lebental, Bérengère

    2016-05-01

    Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp2 clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency.

  4. Fiber-optic protease sensor based on the degradation of thin gelatin films

    Directory of Open Access Journals (Sweden)

    Bastien Schyrr

    2015-03-01

    Full Text Available Despite increasing interest in situ monitoring of proteolytic activity in chronic wound is not possible and information can only be obtained by sampling wound exudate. In this context, we developed an evanescent wave (EW fiber-optic sensor to quantify protease activity directly in the wound bed. Detection is based on the degradation of thin gelatin films deposited on the fiber core by dip-coating, which serve as a substrate for proteases. After staining with a chlorophyllin copper sodium salt biocompatible dye, EW absorption occurs proportionally to the dye concentration, which is detected by the variation in light transmission intensity. The sensor response varies proportionally to enzymatic activity, showing sensitivity against MMP-2 and MMP-9 down to 2 μg/mL and 10 μg/mL, respectively. In addition, it is sensitive to film thickness and crosslink density, thus allowing tuning of the sensitivity and lifetime. Designed to be totally biocompatible and low cost, this miniature sensor has potential for use as a point-of-care disposable device in a clinical environment to assist physicians with quantitative information about the wound healing process.

  5. Development of ruthenium dioxide electrodes for pyroelectric devices based on lithium tantalate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nougaret, Laurianne [Centre d' Electronique et de Micro-optoelectronique de Montpellier, Unite mixte de Recherche du CNRS no 5507, Universite Montpellier II, Place E. Bataillon, 34095 Montpellier cedex 05 (France)]. E-mail: laurianne.nougaret@univ-montp2.fr; Combette, Philippe [Centre d' Electronique et de Micro-optoelectronique de Montpellier, Unite mixte de Recherche du CNRS no 5507, Universite Montpellier II, Place E. Bataillon, 34095 Montpellier cedex 05 (France)]. E-mail: philippe.combette@univ-montp2.fr; Arinero, Richard [Centre d' Electronique et de Micro-optoelectronique de Montpellier, Unite mixte de Recherche du CNRS no 5507, Universite Montpellier II, Place E. Bataillon, 34095 Montpellier cedex 05 (France)]. E-mail: richard.arinero@univ-montp2.fr; Podlecki, Jean [Centre d' Electronique et de Micro-optoelectronique de Montpellier, Unite mixte de Recherche du CNRS no 5507, Universite Montpellier II, Place E. Bataillon, 34095 Montpellier cedex 05 (France)]. E-mail: jean.podlecki@univ-montp2.fr; Pascal-Delannoy, Frederique [Centre d' Electronique et de Micro-optoelectronique de Montpellier, Unite mixte de Recherche du CNRS no 5507, Universite Montpellier II, Place E. Bataillon, 34095 Montpellier cedex 05 (France)]. E-mail: Frederique.delannoy@univ-montp2.fr

    2007-02-26

    The aim of this paper is the study of ruthenium dioxide (RuO{sub 2}) films, grown on low-stress silicon nitride on silicon (SiN {sub x}/Si), in order to develop thermal micro-sensors based on pyroelectric effect. The active part of these micro-sensors is constituted by a new arrangement : lithium tantalate (LiTaO{sub 3})/RuO{sub 2}/SiN{sub x}/Si. Radio-frequency (RF) sputtering is employed to deposit RuO{sub 2} on SiN {sub x}/Si substrate. Morphology, crystallinity and resistivity of RuO{sub 2} are studied as function of growth parameters. Next, RF magnetron sputtering was used to deposit LiTaO{sub 3} on this electrode. Morphology studies, pyroelectric effect and dielectric parameters obtained, indicate that RuO{sub 2} material is a suitable candidate as back electrode for LiTaO{sub 3} thin films.

  6. Photophysical properties of thin films and solid phase of switchable supermolecular anthracene-based rotaxanes

    NARCIS (Netherlands)

    Giro, G.; Cocchi, M.; Fattori, V.; Gadret, G.; Ruani, G.; Cavallini, M.; Biscarini, F.; Zamboni, R.; Loontjens, T.; Thies, J.; Leigh, D.A.; Morales, A.F.; Mahrt, R.F.

    2001-01-01

    Polycrystalline powders and thin films of a novel rotaxane, methyl-exopyridine-anthracene rotaxane (EPAR-Me), and of the related thread and stoppers 10-[3,5-di (ter butyl)phenoxy]decyl-2-({2-[(9-anthrylcarbonyl) amino] acetyl}amino) acetate (ANTPEP), have been characterised by photoluminescence, abs

  7. Silicon-based thin-film transistors with a high stability

    NARCIS (Netherlands)

    Stannowski, Bernd

    2002-01-01

    Thin-Film Transistors (TFTs) are widely applied as pixel-addressing devices in large-area electronics, such as active-matrix liquid-crystal displays (AMLCDs) or sensor arrays. Hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiNx:H) are generally used as the semiconductor and the insul

  8. Nanoparticles and Nanostructured Thin Films Based on Strong Polycations of Integral type

    Institute of Scientific and Technical Information of China (English)

    E. S. Dragan; M. Mihai; S. Schwarz

    2005-01-01

    @@ 1Introduction Nonstoichiometric interpolyelectrolyte complexes (NIPECs) as nanoparticles, on the one side, and nanostructured thin films with controlled architecture, deposited on some planar surfaces, on the other side,have been designed by eco-friendly techniques using strong polycations (PC) containing quaternary ammonium groups in the backbone and either strong polyanions or multicharged azo dyes.

  9. Fabrication of semi-transparent superoleophobic thin film from fabrics and nanoparticle-based hierarchical structure

    OpenAIRE

    Nishizawa S.; Shiratori S.

    2013-01-01

    Superoleophobic thin films have many potential applications including fluid transfer, fluid power systems, stain resistant and antifouling materials, and microfluidics among others. Transparency is also desired with superhydrophobicity for their numerous applications; however transparency and oleophobicity are almost incompatible relationship with each other in the point of surface structure. Because oleophobicity required rougher structure at nano-micro scale than hydrophobicity, and these r...

  10. Current Progress of Hf (Zr)-Based High-k Gate Dielectric Thin Films

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant (high-k) gate materials, as alternatives to SiO2, have been extensively investigated. Hf (Zr)-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf (Zr)-based high-k gate dielectrics based on PVD (physical vapor deposition) process. This article begins with a survey of various methods developed for generating Hf (Zr)-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf (Zr)-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf (Zr)-based high-k gate dielectrics.

  11. NLO properties of functionalized DNA thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krupka, Oksana [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France)], E-mail: okrupka@mail.ru; El-ghayoury, Abdelkrim [University d' Angers, UFR Sciences, Laboratoire CIMMA UMR CNRS 6200, 2 Bd. Lavoisier, 49045 (France); Rau, Ileana; Sahraoui, Bouchta [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France); Grote, James G. [Air Force Research Laboratory Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, 3005 Hobson Way, Dayton, OH 45433-7707 (United States); Kajzar, Francois [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France)

    2008-10-31

    In this paper we investigate the third-order nonlinear optical properties of spin deposited thin films of DNA-based complexes using the optical third harmonic generation (THG) technique at a fundamental wavelength of 1064 nm. We found that the third-order susceptibility, {chi}{sup (3)}(- 3{omega};{omega},{omega},{omega}), of DNA-based films was about one order of magnitude larger than that of our reference, a pure silica slab. In thin films doped with 5% of the chromophore disperse red 1 (DR1), a two order of magnitude larger value of {chi}{sup (3)}(- 3{omega};{omega},{omega},{omega}) was observed.

  12. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  13. Thin-film monocrystalline-silicon solar cells based on a seed layer approach with 11% efficiency

    Science.gov (United States)

    Gordon, I.; Qiu, Y.; Van Gestel, D.; Poortmans, J.

    2010-09-01

    Solar modules made from thin-film crystalline-silicon layers of high quality on glass substrates could lower the price of photovoltaic electricity substantially. Almost half of the price of wafer-based silicon solar modules is currently due to the cost of the silicon wafers themselves. Using crystalline-silicon thin-film as the active material would substantially reduce the silicon consumption while still ensuring a high cell-efficiency potential and a stable cell performance. One way to create a crystalline-silicon thin film on glass is by using a seed layer approach in which a thin crystalline-silicon layer is first created on a non-silicon substrate, followed by epitaxial thickening of this layer. In this paper, we present new solar cell results obtained on 10-micron thick monocrystalline-silicon layers, made by epitaxial thickening of thin seed layers on transparent glass-ceramic substrates. We used thin (001)-oriented silicon single-crystal seed layers on glass-ceramic substrates provided by Corning Inc. that are made by a process based on anodic bonding and implant-induced separation. Epitaxial thickening of these seed layers was realized in an atmospheric-pressure chemical vapor deposition system. Simple solar cell structures in substrate configuration were made from the epitaxial mono-silicon layers. The Si surface was plasma-textured to reduce the front-side reflection. No other light trapping features were incorporated. Efficiencies of up to 11% were reached with Voc values above 600 mV indicating the good electronic quality of the material. We believe that by further optimizing the material quality and by integrating an efficient light trapping scheme, the efficiency potential of these single-crystal silicon thin films on glass-ceramics should be higher than 15%.

  14. Photonic-Crystal-Based Thin Film Sensor for Detecting Volatile Organic Compounds

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Hyung Kwan; Park, Jung Yul [Sogang Univ., Seoul (Korea, Republic of)

    2016-03-15

    Early detection of toxic gases, such as volatile organic compounds (VOCs), is important for safety and environmental protection. However, the conventional detection methods require long-term measurement times and expensive equipment. In this study, we propose a thin-film-type chemical sensor for VOCs, which consists of self assembled monosize nanoparticles for 3-D photonic crystal structures and polydimthylsiloxane (PDMS) film. It is operated without any external power source, is truly portable, and has a fast response time. The structure color of the sensor changes when it is exposed to VOCs, because VOCs induce a swelling of the PDMS. Therefore, using this principle of color change, we can create a thin-film sensor for immediate detection of various types of VOCs. The proposed device evidences that a fast response time of just seconds, along with a clear color change, are successfully observed when the sensor is exposed to gas-phase VOCs.

  15. Thin-film photovoltaic partnership -- CIS-based thin film PV technology: Final technical report, September 1995--December 1998

    Energy Technology Data Exchange (ETDEWEB)

    Tarrant, D.E.; Gay, R.R.

    1999-10-26

    Siemens Solar Industries (SSI) achieved outstanding progress toward NREL/DOE goals during this subcontract. The statistical process control methodology was applied, and it demonstrated process reproducibility and yields for a 10-cm {times} 10-cm substrate size baseline process. Based on an understanding of the importance of materials of construction and the physical layout for absorber formation reactors, SSI designed and built a replacement large-area reactor based on a more direct scale-up of the baseline reactor. While designing and building the new large-area reactor, SSI defined and demonstrated new package designs to combine 10-cm {times} 30-cm circuit plates into one package; this allowed SSI to deliver large-area prototype modules to NREL for evaluation, and to introduce the first CIS-based products--5-watt (ST5) and 10-watt (ST10) modules. After completion of the new large-area reactor, all processes were scaled to a 30-cm {times} 120-cm plate size. Subsequently, only large 30-cm {times} 120-cm circuit plates were fabricated for 30-cm {times} 120-cm prototype modules or, after cutting the large circuit plates into smaller circuit plates, for the two new CIS-based products. The scaled process exhibits generally good control for extended periods with periodic shifts in the short-term process average that appears to result from batch-to-batch variability in precursor or base electrode preparation. Similarly, periodic shunting along the laser-scribed pattern lines in the Mo base electrode appears to result from batch-to-batch variability in base electrode preparation. Significant progress was made in understanding transient effects in CIS devices. Transient effects are important for many topics, including accelerated testing, process definition, measurement protocols, process predictability, interpretation of experimental test results, and understanding of device structures. Long-term outdoor stability of CIS continues to be demonstrated at NREL where 30-cm

  16. Si-based thin film coating on Y-TZP: Influence of deposition parameters on adhesion of resin cement

    Energy Technology Data Exchange (ETDEWEB)

    Queiroz, José Renato Cavalcanti, E-mail: joserenatocq@hotmail.com [Potiguar University, Department of Biotechnology, Natal (Brazil); Nogueira Junior, Lafayette [São Paulo State University, Department of Prosthodontics and Dental Materials, São José dos Campos (Brazil); Massi, Marcos [Federal University of São Paulo, Institute of Science and Technology, São José dos Campos (Brazil); Silva, Alecssandro de Moura; Bottino, Marco Antonio [São Paulo State University, Department of Prosthodontics and Dental Materials, São José dos Campos (Brazil); Sobrinho, Argemiro Soares da Silva [Technological Institute of Aeronautics, Department of Physics, São José dos Campos (Brazil); Özcan, Mutlu [University of Zurich, Dental Materials Unit, Center for Dental and Oral Medicine, Clinic for Fixed and Removable Prosthodontics and Dental Materials Science, Zurich (Switzerland)

    2013-10-01

    This study evaluated the influence of deposition parameters for Si-based thin films using magnetron sputtering for coating zirconia and subsequent adhesion of resin cement. Zirconia ceramic blocks were randomly divided into 8 groups and specimens were either ground finished and polished or conditioned using air-abrasion with alumina particles coated with silica. In the remaining groups, the polished specimens were coated with Si-based film coating with argon/oxygen magnetron discharge at 8:1 or 20:1 flux. In one group, Si-based film coating was performed on air-abraded surfaces. After application of bonding agent, resin cement was bonded. Profilometry, goniometry, Energy Dispersive X-ray Spectroscopy and Rutherford Backscattering Spectroscopy analysis were performed on the conditioned zirconia surfaces. Adhesion of resin cement to zirconia was tested using shear bond test and debonded surfaces were examined using Scanning Electron Microscopy. Si-based film coating applied on air-abraded rough zirconia surfaces increased the adhesion of the resin cement (22.78 ± 5.2 MPa) compared to those of other methods (0–14.62 MPa) (p = 0.05). Mixed type of failures were more frequent in Si film coated groups on either polished or air-abraded groups. Si-based thin films increased wettability compared to the control group but did not change the roughness, considering the parameters evaluated. Deposition parameters of Si-based thin film and after application of air-abrasion influenced the initial adhesion of resin cement to zirconia.

  17. Energy harvesting using ionic electro-active polymer thin films with Ag-based electrodes

    Science.gov (United States)

    Anand, S. V.; Arvind, K.; Bharath, P.; Mahapatra, D. Roy

    2010-04-01

    In this paper we employ the phenomenon of bending deformation induced transport of cations via the polymer chains in the thickness direction of an electro-active polymer (EAP)-metal composite thin film for mechanical energy harvesting. While EAPs have been applied in the past in actuators and artificial muscles, promising applications of such materials in hydrodynamic and vibratory energy harvesting are reported in this paper. For this, functionalization of EAPs with metal electrodes is the key factor in improving the energy harvesting efficiency. Unlike Pt-based electrodes, Ag-based electrodes have been deposited on an EAP membrane made of Nafion. The developed ionic metal polymer composite (IPMC) membrane is subjected to a dynamic bending load, hydrodynamically, and evaluated for the voltage generated against an external electrical load. An increase of a few orders of magnitude has been observed in the harvested energy density and power density in air, deionized water and in electrolyte solutions with varying concentrations of sodium chloride (NaCl) as compared to Pt-based IPMC performances reported in the published literature. This will have potential applications in hydrodynamic and residual environmental energy harvesting to power sensors and actuators based on micro-and nano-electro-mechanical systems (MEMS and NEMS) for biomedical, aerospace and oceanic applications.

  18. Carbon Nanotube Thin-Film Antennas.

    Science.gov (United States)

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  19. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  20. Thin film corrosion. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Raut, M.K.

    1980-06-01

    Corrosion of chromium/gold (Cr/Au) thin films during photolithography, prebond etching, and cleaning was evaluated. Vapors of chromium etchant, tantalum nitride etchant, and especially gold etchant were found to corrosively attack chromium/gold films. A palladium metal barrier between the gold and chromium layers was found to reduce the corrosion from gold etchant.

  1. Centrifugation-based Purification of Emerging Low-dimensional Materials and Their Thin-film Applications

    Science.gov (United States)

    Seo, Jung Woo

    Polydispersity in low-dimensional materials offers many interesting challenges and properties. In particular, the one- and two-dimensional carbon allotropes such as carbon nanotubes and graphene have demonstrated exquisite optoelectronic properties that are highly sensitive to their physical structures, where subtle variations in diameter and thickness render them with significantly different electronic band structures. Thus, the carbon nanomaterials have been the subject of extensive studies that address their polydispersity issues. Among these, solution-phase, buoyant density-based methods such as density gradient ultracentrifugation have been widely utilized to enrich subpopulations of carbon nanotubes and graphene with narrow distribution in diameter and thickness, enabling their applications in various next-generation thin-film devices. In this thesis, I present further advancement of centrifugation-based processing methods for emerging low-dimensional materials through systematic utilization of previously explored surfactant systems, development of novel surfactant types, and study of correlation between the chemical structure of surfactants and the dispersion and optoelectronic properties of the nanomaterials. First, I employ an iterative density gradient ultracentrifugation with a combination of anionic surfactants and addition of excess counter-ions to achieve isolation of novel diameter species of semiconducting single-walled carbon nanotubes. The purification of carbon nanotubes with simultaneous, ultrahigh-purity refinement in electronic type and diameter distribution leads to collaborative studies on heat distribution characteristics and diameter-dependent direct current and radio frequency performances in monodisperse carbon nanotube thin-film transistors. Next, I develop the use of non-ionic polymeric surfactants for centrifugation-based processes. Specifically, I utilize polypropylene and polyethylene oxide-based block copolymers with density

  2. The development of Tl-2212 based superconducting thin films for microwave applications

    CERN Document Server

    Hyland, D M C

    2001-01-01

    This thesis attempts to develop the understanding of the two-stage ex-situ processing of Tl sub 2 Ba sub 2 CaCu sub 2 O (Tl-2212) thin films on LaAlO sub 3 substrates. Initially a thallium-free precursor film is deposited by sputtering, this is then annealed in a sealed crucible containing a thallium source to produce the final crystalline film. An investigation into the correlation of physical characteristics of the films with their microwave properties is presented. High reproducibility of processing was achieved for 1cm sup 2 size films with measured R sub s < 0.5m OMEGA. Strong dependence of the microwave properties was found with film thickness and growth morphology of the crystalline film. A good correlation of R sub s was seen with defect density, greater numbers of defects giving higher R sub s values. Problems were encountered in scaling up the process to fabricate 2-inch diameter films, initially limited by the increased defect density associated with a larger surface area. Additionally when usin...

  3. Thin Film Deposition Techniques (PVD)

    Science.gov (United States)

    Steinbeiss, E.

    The most interesting materials for spin electronic devices are thin films of magnetic transition metals and magnetic perovskites, mainly the doped La-manganites [1] as well as several oxides and metals for passivating and contacting the magnetic films. The most suitable methods for the preparation of such films are the physical vapor deposition methods (PVD). Therefore this report will be restricted to these deposition methods.

  4. Ceramics and amorphous thin films based on gallium sulphide doped by rare-earth sulphides

    Science.gov (United States)

    Popescu, M.; Sava, F.; Lőrinczi, A.; Velea, A.; Simandan, I. D.; Badica, P.; Burdusel, M.; Galca, A. C.; Matei, E.; Preda, N.; Secu, M.; Socol, G.; Jipa, F.; Zamfirescu, M.; Balan, A.

    2015-04-01

    Bulk ceramics of Ga2S3 and rare-earth sulfides (EuS, Gd2S3, Er2S3) as well as combinations thereof have been prepared by spark plasma sintering (SPS). The disk-shaped ceramics were used as targets for pulsed laser deposition (PLD) experiments to obtain amorphous thin films. The properties of these new bulks and amorphous thin films have been investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDX), optical transmission spectroscopy, and atomic force microscopy (AFM). In order to test the photoexpansion effect in Ga2S3 and the possibility to create planar arrays of microlenses, the film was irradiated with femtosecond laser pulses at different powers. For low laser power pulses (up to 100 mW power per pulse) a photoexpansion effect was observed, which leads to formation of hillocks with a height of 40-50 nm. EuS doped Ga2S3 thin film shows luminescence properties, which recommend them for optoelectronic applications.

  5. Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

    Science.gov (United States)

    Nguyen, Ky V.; Payne, Marcia M.; Anthony, John E.; Lee, Jung Hun; Song, Eunjoo; Kang, Boseok; Cho, Kilwon; Lee, Wi Hyoung

    2016-09-01

    Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence on device performance, a substantial number of studies have been devoted to controlling the crystallization characteristics of organic semiconductors. We studied the intrinsic effects of GBs within 5,11-bis(triethylsilylethynyl) anthradithiophene (TES-ADT) thin films on the electrical properties of OFETs. The GB density was easily changed by controlling nulceation event in TES-ADT thin films. When the mixing time was increased, the number of aggregates in as-spun TES-ADT thin films were increased and subsequent exposure of the films to 1,2-dichloroethane vapor led to a significant increase in the number of nuleation sites, thereby increasing the GB density of TES-ADT spherulites. The density of GBs strongly influences the angular spread and crystallographic orientation of TES-ADT spherulites. Accordingly, the FETs with higher GB densities showed much poorer electrical characteristics than devices with lower GB density. Especially, GBs provide charge trapping sites which are responsible for bias-stress driven electrical instability. Dielectric surface treatment with a polystyrene brush layer clarified the GB-induced charge trapping by reducing charge trapping at the semiconductor-dielectric interface. Our study provides an understanding on GB induced bias instability for the development of high performance OFETs.

  6. Zinc-Based Semiconductors/Polymer Thin Films Junction for Photovoltaic Application

    Directory of Open Access Journals (Sweden)

    Souad Al-bat’hi

    2012-01-01

    Full Text Available Thin films of ZnO and ZnTe semiconductors were deposited on ITO conducting glass substrates by sputtering and electrodeposition techniques, respectively. On the other hand, thin films of ion conducting solid polymer electrolyte were prepared by solution cast technique. The polymer is a blend of 50 wt% polyethylene oxide and 50 wt% chitosan. To provide redox couple (I−/I3−, the polymer was complexed with ammonium iodide NH4I with addition of few crystals of iodine I2. Ammonium iodide NH4I was added to the solution in different amounts (wt% weight ratios to supply the charge carriers for the polymer electrolytes. The highest ionic conductivity of the polymer electrolyte was 1.18×10−5 S cm−1 at room temperature. Structural and optical properties of the semiconductor thin films were characterized by X-ray diffractometer and UV-Vis spectrophotometer. The XRD shows crystalline structures for both ZnO and ZnTe thin films. The UV-Vis shows direct energy gaps EZnO of 3.1 eV and EZnTe of 2.2 eV. The polymer film was sandwiched between the ZnO and ZnTe semiconductors to form ITO/ZnO/polymer/ZnTe/ITO double-junction photovoltaic cell, and the photovoltaic properties were studied. The highest open-circuit voltage oc, short-circuit current density sc, and fill factor FF of the fabricated cells are 0.5 V, 55 μA cm−2, and 27%, respectively.

  7. Bamboo (Neosinocalamus affinis)-based thin film, a novel biomass material with high performances.

    Science.gov (United States)

    Song, Fei; Xu, Chen; Bao, Wen-Yi; Wang, Xiu-Li; Wang, Yu-Zhong

    2015-03-30

    Exploration of biomass based materials to replace conventional petroleum based ones has been a trend in recent decades. In this work, bamboo (Neosinocalamus affinis) with abundant resources was used for the first time to prepare films in the presence of cellulose. The effects of weight ratio of bamboo/cellulose on the appearances and properties of the films were investigated. It was confirmed there existed strong interactions between bamboo and cellulose, which were favorable to formation of homogeneous structure of blend films. Particularly, the presence of bamboo could improve the surface hydrophobicity, water resistance and thermal stability of blend films, and the films possessed an excellent oxygen barrier property, compared with generally used commercial packaging films. The bamboo biomass, therefore, is successfully used to create a new film material with a good application prospect in the fields of packaging, coating, and food industry.

  8. UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes

    Science.gov (United States)

    Alkis, Sabri; Tekcan, Burak; Nayfeh, Ammar; Kemal Okyay, Ali

    2013-10-01

    We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 ° C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs) show good electrical rectification characteristics with ON/OFF ratios reaching up to 103. Under UV (350 nm wavelength) and visible (475 nm wavelength) light illumination, the ZnO-Si-PDs give photoresponsivity values of 30-37 mA W-1 and 74-80 mA W-1 at 0.5 V reverse bias, respectively. Photoluminescence (PL) spectra of ALD grown ZnO thin films are used to support the results.

  9. Sol-Gel Deposited Porogen Based Porous Low-k Thin Films for Interlayer Dielectric Application in ULSI Circuits

    Directory of Open Access Journals (Sweden)

    Yogesh S. Mhaisagar

    2012-10-01

    Full Text Available Porous SiO2 low-k thin films with low dielectric constant were successfully deposited by sol-gel spin-coating technique. The films were deposited by using Tertaethylorthosilicate (TEOS as a precursor solution and HF was used as an acid catalyst solution. The Tween80 with different volumetric concentrations i.e. 0.0 ml, 0.5 ml and 0.7 ml was used as a pore generator to lower the dielectric constant of the films by introducing the porosity in the films matrix. The thickness and refractive index (RI of low-k thin films have been measured by Ellipsometer. The refractive index and thickness of the films observed to be decreasing with increase in Tween80 concentration. The chemical bonding structures of films were analyzed by using Fourier transform infrared spectroscopy (FT-IR spectroscopy and the stretching, bending and rocking peaks appear at 1077 cm – 1, 967  cm – 1, 447  cm – 1 respectively confirm the formation of Si-O-Si network. The RIs of the films deposited at 0 ml, 0.5 ml and at 0.7 ml of Tween80 concentration are found to be 1.34, 1.26, and 1.20 respectively. Based on RI values of the films, the porosity percentage, density and dielectric constant have been calculated by standard formulation method. The increase in porosity percentage of films from 3 % to 55 % with increase in Tween80 concentration reveals that, the most of the hydroxyl group and porogen get evaporated and form more voids in the films. This increase in porosity percentage causes to lower the dielectric constant of films and was found to be 2.26 at the 0.7 ml of Tween80 concentration. Such porogen based low dialectic constant thin films can be suitable for interlayer dielectric (ILD applications in ULSI circuits.

  10. TTF/TCNQ-based thin films and microcrystals. Growth and charge transport phenomena

    Energy Technology Data Exchange (ETDEWEB)

    Solovyeva, Vita

    2011-05-26

    The thesis adresses several problems related to growth and charge transport phenomena in thin films of TTF-TCNQ and (BEDT-TTF)TCNQ. The following main new problems are addressed: - The influence of thin-film specific factors, such as the substrate material and growth-induced defects, on the Peierls transition temperature in TTF-TCNQ thin films was studied; - finite-size effects in TTF-TCNQ were investigated by considering transport properties in TTF-TCNQ microcrystals. The influence of the size of the crystal on the Peierls transition temperature was studied. In this context a new method of microcontact fabrication was employed to favor the measurements; - an analysis of radiation-induced defects in TTF-TCNQ thin films and microcrystals was performed. It was demonstrated than an electron beam can induce appreciable damage to the sample such that its electronic properties are strongly modified; - a bilayer growth method was established to fabricate (BEDT-TTF)TCNQ from the gas phase. This newly developed bilayer growth method was showed to be suitable for testing (BEDT-TTF)TCNQ charge-transfer phase formation; - the structure of the formed (BEDT-TTF)TCNQ charge-transfer compounds was analyzed by using a wide range of experimental techniques. An overview and the description of the basic physical principles underlying charge-transfer compounds is given in chapter 2. Experimental techniques used for the growth and characterization of thin films and microcrystals are presented in chapter 3. Chapter 4 gives an overview of the physical properties of the studied organic materials. Chapter 5 discussed the experimental study of TTF-TCNQ thin films. he Peierls transition in TTF-TCNQ is a consequence of the quasi-one-dimensional structure of the material and depends on different factors, studied in chapters 5 and 6. In contradistinction to TTF-TTCNQ, the (BEDT-TTF)TCNQ charge-transfer compound crystallizes in several different modifications with different physical properties

  11. How do evaporating thin films evolve? Unravelling phase-separation mechanisms during solvent-based fabrication of polymer blends

    KAUST Repository

    Wodo, Olga

    2014-10-13

    © 2014 AIP Publishing LLC. Solvent-based fabrication is a flexible and affordable approach to manufacture polymer thin films. The properties of products made from such films can be tailored by the internal organization (morphology) of the films. However, a precise knowledge of morphology evolution leading to the final film structure remains elusive, thus limiting morphology control to a trial and error approach. In particular, understanding when and where phases are formed, and how they evolve would provide rational guidelines for more rigorous control. Here, we identify four modes of phase formation and subsequent propagation within the thinning film during solvent-based fabrication. We unravel the origin and propagation characteristics of each of these modes. Finally, we construct a mode diagram that maps processing conditions with individual modes. The idea introduced here enables choosing processing conditions to tailor film morphology characteristics and paves the ground for a deeper understanding of morphology control with the ultimate goal of precise, yet affordable, morphology manipulation for a large spectrum of applications.

  12. Photodiode Based on CdO Thin Films as Electron Transport Layer

    Science.gov (United States)

    Soylu, M.; Kader, H. S.

    2016-11-01

    Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage ( I- V) characteristics of the CdO/ p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances ( R s and R sh), saturation current I 0, and photocurrent I ph, were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.

  13. Flexible thin-film battery based on graphene-oxide embedded in solid polymer electrolyte

    Science.gov (United States)

    Kammoun, M.; Berg, S.; Ardebili, H.

    2015-10-01

    Enhanced safety of flexible batteries is an imperative objective due to the intimate interaction of such devices with human organs such as flexible batteries that are integrated with touch-screens or embedded in clothing or space suits. In this study, the fabrication and testing of a high performance thin-film Li-ion battery (LIB) is reported that is both flexible and relatively safer compared to the conventional electrolyte based batteries. The concept is facilitated by the use of solid polymer nanocomposite electrolyte, specifically, composed of polyethylene oxide (PEO) matrix and 1 wt% graphene oxide (GO) nanosheets. The flexible LIB exhibits a high maximum operating voltage of 4.9 V, high capacity of 0.13 mA h cm-2 and an energy density of 4.8 mW h cm-3. The battery is encapsulated using a simple lamination method that is economical and scalable. The laminated battery shows robust mechanical flexibility over 6000 bending cycles and excellent electrochemical performance in both flat and bent configurations. Finite element analysis (FEA) of the LIB provides critical insights into the evolution of mechanical stresses during lamination and bending.Enhanced safety of flexible batteries is an imperative objective due to the intimate interaction of such devices with human organs such as flexible batteries that are integrated with touch-screens or embedded in clothing or space suits. In this study, the fabrication and testing of a high performance thin-film Li-ion battery (LIB) is reported that is both flexible and relatively safer compared to the conventional electrolyte based batteries. The concept is facilitated by the use of solid polymer nanocomposite electrolyte, specifically, composed of polyethylene oxide (PEO) matrix and 1 wt% graphene oxide (GO) nanosheets. The flexible LIB exhibits a high maximum operating voltage of 4.9 V, high capacity of 0.13 mA h cm-2 and an energy density of 4.8 mW h cm-3. The battery is encapsulated using a simple lamination method

  14. atomic layer deposition of amorphous niobium carbide-based thin film superconductors.

    Energy Technology Data Exchange (ETDEWEB)

    Prolier, T.; Klug, J. A.; Elam, J. W.; Claus, H.; Becker, N. G.; Pellin, M. J. (Materials Science Division)

    2011-01-01

    Niobium carbide thin films were synthesized by atomic layer deposition (ALD) using trimethylaluminum (TMA), NbF{sub 5}, and NbCl{sub 5} precursors. In situ quartz crystal microbalance (QCM) measurements performed at 200 and 290 C revealed controlled, linear deposition with a high growth rate of 5.7 and 4.5 {angstrom}/cycle, respectively. The chemical composition, growth rate, structure, and electronic properties of the films were studied over the deposition temperature range 125-350 C. Varying amounts of impurities, including amorphous carbon (a-C), AlF{sub 3}, NbF{sub x}, and NbCl{sub x}, were found in all samples. A strong growth temperature dependence of film composition, growth rate, and room temperature DC resistivity was observed. Increasing film density, decreasing total impurity concentration, and decreasing resistivity were observed as a function of increasing deposition temperature for films grown with either NbF{sub 5} or NbCl{sub 5}. Superconducting quantum interference device (SQUID) magnetometry measurements down to 1.2 K revealed a superconducting transition at T{sub c} = 1.8 K in a 75 nm thick film grown at 350 C with TMA and NbF{sub 5}. The superconducting critical temperature could be increased up to 3.8 K with additional use of NH{sub 3} during ALD film growth.

  15. Atomic layer deposition of amorphous niobium carbide-based thin film superconductors.

    Energy Technology Data Exchange (ETDEWEB)

    Klug, J. A.; Prolier, T.; Elam, J. W.; Becker, N. G.; Pellin, M. J. (Energy Systems); ( HEP); ( MSD); (Illinois Inst. Tech.)

    2011-01-01

    Niobium carbide thin films were synthesized by atomic layer deposition (ALD) using trimethylaluminum (TMA), NbF{sub 5}, and NbCl{sub 5} precursors. In situ quartz crystal microbalance (QCM) measurements performed at 200 and 290 C revealed controlled, linear deposition with a high growth rate of 5.7 and 4.5 {angstrom}/cycle, respectively. The chemical composition, growth rate, structure, and electronic properties of the films were studied over the deposition temperature range 125-350 C. Varying amounts of impurities, including amorphous carbon (a-C), AlF{sub 3}, NbF{sub x}, and NbCl{sub x}, were found in all samples. A strong growth temperature dependence of film composition, growth rate, and room temperature DC resistivity was observed. Increasing film density, decreasing total impurity concentration, and decreasing resistivity were observed as a function of increasing deposition temperature for films grown with either NbF{sub 5} or NbCl{sub 5}. Superconducting quantum interference device (SQUID) magnetometry measurements down to 1.2 K revealed a superconducting transition at T{sub c} = 1.8 K in a 75 nm thick film grown at 350 C with TMA and NbF{sub 5}. The superconducting critical temperature could be increased up to 3.8 K with additional use of NH{sub 3} during ALD film growth.

  16. Activated charcoal based diffusive gradients in thin films for in situ monitoring of bisphenols in waters.

    Science.gov (United States)

    Zheng, Jian-Lun; Guan, Dong-Xing; Luo, Jun; Zhang, Hao; Davison, William; Cui, Xin-Yi; Wang, Lian-Hong; Ma, Lena Q

    2015-01-06

    Widespread use of bisphenols (BPs) in our daily life results in their elevated concentrations in waters and the need to study their environmental impact, which demands reliable and robust measurement techniques. Diffusive gradients in thin films (DGT) is an in situ passive sampling approach which provides time-integrated data. In this study we developed a new methodology, based on DGT with activated charcoal (AC) as a binding agent, for measuring three BPs (BPA, BPB, and BPF) which incorporated and tested its performance characteristics. Consistent elution efficiencies were obtained using methanol when concentrations of BPs were low and a methanol-NaOH mixture at high concentrations. The diffusion coefficients of BPA, BPB, and BPF in the diffusive gel, measured using an independent diffusion cell, were 5.03 × 10(-6), 5.64 × 10(-6), and 4.44 × 10(-6) cm(2) s(-1) at 25 °C, respectively. DGT with an AC binding gel had a high capacity for BPA, BPB, and BPF at 192, 140, and 194 μg/binding gel disk, respectively, and the binding performance did not deteriorate with time, up to 254 d after production. Time-integrated concentrations of BPs measured in natural waters using DGT devices with AC gels deployed in situ for 7 d were comparable to concentrations measured by an active sampling method. This study demonstrates that AC-based DGT is an effective tool for in situ monitoring of BPs in waters.

  17. Performance Evaluation of ZnO based Rare Earth Element Doped Thin Films

    Directory of Open Access Journals (Sweden)

    Manish Sharma

    2013-10-01

    Full Text Available In DMS materials, a small fraction of a host semiconductor cation is substituted by magnetic ions. We chose as semiconducting host the transparent ZnO, with a bandgap of 3.3 eV at room temperature. Studies on ZnO doped with 3d transition metals indicated only small magnetic moments. The more recent results for Gd in GaN, indicating high magnetic moments, motivated us to investigate ZnO thin films doped with rare earth (RE metal ions. For the 3d transition metals, the 3d electrons are exterior and delocalized; leading to strong direct exchange interactions and high Curie temperatures, but often the orbital momentum is zero, leading to small total magnetic moments per atom. In RE metals, the 4f electrons are localized, exchange interactions are indirect, via 5d or 6s conduction electrons, but the high orbital momentum is leading to high total magnetic moments per atom, like 3.27μB for Nd. The Curie point for Nd is 19 K. In this paper we present the results of our study on ZnO films doped with Nd. Hall measurements are performed to investigate the electrical properties of films. Here we prepared and investigated ZnO films doped with different concentration of Nd. The films are grown on a-plane Al2O3 or SiO2 substrates. Hall investigations of electrical properties revealed the presence of a degenerate, highly conducting, film–substrate interface layer for the films grown on Al2O3; such an effect can be avoided, for example, by using SiO2 substrates. Magnetotransport measurements indicated no anomalous Hall effect, but a pronounced negative magneto resistance ratio that can be interpreted as a paramagnetic response of the system to the applied magnetic field. We would like to proceed with the surface sensitive techniques for investigating magnetic properties of ZnO:RE thin films.

  18. Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

    OpenAIRE

    Ky V. Nguyen; Payne, Marcia M.; Anthony, John E.; Jung Hun Lee; Eunjoo Song; Boseok Kang; Kilwon Cho; Wi Hyoung Lee

    2016-01-01

    Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence on device performance, a substantial number of studies have been devoted to controlling the crystallization characteristics of organic semiconductors. We studied the intrinsic effects of GBs within 5,11-bis(triethylsilylethynyl) anthradithiophene (TES-ADT) thin films on the electrical properties of OFETs. The GB density was easily changed by controlling nulceatio...

  19. H2 S Sensors: Fumarate-Based fcu-MOF Thin Film Grown on a Capacitive Interdigitated Electrode.

    Science.gov (United States)

    Yassine, Omar; Shekhah, Osama; Assen, Ayalew H; Belmabkhout, Youssef; Salama, Khaled N; Eddaoudi, Mohamed

    2016-12-19

    Herein we report the fabrication of an advanced sensor for the detection of hydrogen sulfide (H2 S) at room temperature, using thin films of rare-earth metal (RE)-based metal-organic framework (MOF) with underlying fcu topology. This unique MOF-based sensor is made via the in situ growth of fumarate-based fcu-MOF (fum-fcu-MOF) thin film on a capacitive interdigitated electrode. The sensor showed a remarkable detection sensitivity for H2 S at concentrations down to 100 ppb, with the lower detection limit around 5 ppb. The fum-fcu-MOF sensor exhibits a highly desirable detection selectivity towards H2 S vs. CH4 , NO2 , H2 , and C7 H8 as well as an outstanding H2 S sensing stability as compared to other reported MOFs.

  20. Room temperature analysis of dielectric function of ZnO-based thin film on fused quartz substrate

    Science.gov (United States)

    Kurniawan, Robi; Sutjahja, Inge M.; Winata, Toto; Rusydi, Andrivo; Darma, Yudi

    2015-09-01

    A set of sample consist of pure ZnO and Cu-doped ZnO film were grown on fused-quartz substrates using pulsed laser deposition (PLD) technique. Here, we report room temperature spectroscopic ellipsometry analysis (covering energy range of 0.5 to 6.3 eV) of pure ZnO film and Cu doped ZnO film at 8 in at. %. The thickness of pure ZnO and Cu-doped ZnO film using in this study is about 350 nm. To extract the dielectric function of ZnO thin film, multilayer modeling is performed which takes into account reflections at each interface through Fresnel coefficients. This method based on Drude-Lorentz models that connect with Kramers-Kronig relations. The best fitting of Ψ (amplitude ratio) and Δ (phase difference) taken by SE measurement are obtained reasonably well by mean the universal fitting of three different photon incident angles. The imaginary part of dielectric function (ɛ2) show the broad peak at around 3.3 eV assigned as combination of optical band energy edge with excitonic states. The exitonic states could not be observed clearly in this stage. The evolution of extracted dielectric function is observable by introducing 8% Cu as indicated by decreasing of excitonic intensity. This result indicates the screening of excitonic state. This study will bring us to have a good undestanding for the role of Cu impurities for ZnO thin films.

  1. Thin-film metal hydrides.

    Science.gov (United States)

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

  2. High efficiency cadmium telluride and zinc telluride based thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Sudharsanan, R.; Ringel, S.A.; Chou, H.C. (Georgia Inst. of Tech., Atlanta, GA (United States))

    1992-10-01

    This report describes work to improve the basic understanding of CdTe and ZnTe alloys by growing and characterizing these films along with cell fabrication. The major objective was to develop wide-band-gap (1.6--1.8 eV) material for the top cell, along with compatible window material and transparent ohmic contacts, so that a cascade cell design can be optimized. Front-wall solar cells were fabricated with a glass/SnO{sub 2}/CdS window, where the CdS film is thin to maximize transmission and current. Wide-band-gap absorber films (E{sub g} = 1.75 eV) were grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which provided excellent control for tailoring the film composition and properties. CdZnTe films were grown by both MBE and MOCVD. All the as-grown films were characterized by several techniques (surface photovoltage spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS)) for composition, bulk uniformity, thickness, and film and interface quality. Front-wall-type solar cells were fabricated in collaboration with Ametek Materials Research Laboratory using CdTe and CdZnTe polycrystalline absorber films. The effects of processing on ternary film were studied by AES and XPS coupled with capacitance voltage and current voltage measurements as a function of temperature. Bias-dependent spectral response and electrical measurements were used to test some models in order to identify and quantify dominant loss mechanisms.

  3. Chemical vapor deposition and characterization of polysilanes polymer based thin films and their applications in compound semiconductors and silicon devices

    Science.gov (United States)

    Oulachgar, El Hassane

    As the semiconductors industry is moving toward nanodevices, there is growing need to develop new materials and thin films deposition processes which could enable strict control of the atomic composition and structure of thin film materials in order to achieve precise control on their electrical and optical properties. The accurate control of thin film characteristics will become increasingly important as the miniaturization of semiconductor devices continue. There is no doubt that chemical synthesis of new materials and their self assembly will play a major role in the design and fabrication of next generation semiconductor devices. The objective of this work is to investigate the chemical vapor deposition (CVD) process of thin film using a polymeric precursor as a source material. This process offers many advantages including low deposition cost, hazard free working environment, and most importantly the ability to customize the polymer source material through polymer synthesis and polymer functionalization. The combination between polymer synthesis and CVD process will enable the design of new generation of complex thin film materials with a wide range of improved chemical, mechanical, electrical and optical properties which cannot be easily achieved through conventional CVD processes based on gases and small molecule precursors. In this thesis we mainly focused on polysilanes polymers and more specifically poly(dimethylsilanes). The interest in these polymers is motivated by their distinctive electronic and photonic properties which are attributed to the delocalization of the sigma-electron along the Si-Si backbone chain. These characteristics make polysilane polymers very promising in a broad range of applications as a dielectric, a semiconductor and a conductor. The polymer-based CVD process could be eventually extended to other polymer source materials such as polygermanes, as well as and a variety of other inorganic and hybrid organic-inorganic polymers

  4. Studying thin film damping in a micro-beam resonator based on non-classical theories

    Science.gov (United States)

    Ghanbari, Mina; Hossainpour, Siamak; Rezazadeh, Ghader

    2016-06-01

    In this paper, a mathematical model is presented for studying thin film damping of the surrounding fluid in an in-plane oscillating micro-beam resonator. The proposed model for this study is made up of a clamped-clamped micro-beam bound between two fixed layers. The micro-gap between the micro-beam and fixed layers is filled with air. As classical theories are not properly capable of predicting the size dependence behaviors of the micro-beam, and also behavior of micro-scale fluid media, hence in the presented model, equation of motion governing longitudinal displacement of the micro-beam has been extracted based on non-local elasticity theory. Furthermore, the fluid field has been modeled based on micro-polar theory. These coupled equations have been simplified using Newton-Laplace and continuity equations. After transforming to non-dimensional form and linearizing, the equations have been discretized and solved simultaneously using a Galerkin-based reduced order model. Considering slip boundary conditions and applying a complex frequency approach, the equivalent damping ratio and quality factor of the micro-beam resonator have been obtained. The obtained values for the quality factor have been compared to those based on classical theories. We have shown that applying non-classical theories underestimate the values of the quality factor obtained based on classical theories. The effects of geometrical parameters of the micro-beam and micro-scale fluid field on the quality factor of the resonator have also been investigated.

  5. Studying thin film damping in a micro-beam resonator based on non-classical theories

    Institute of Scientific and Technical Information of China (English)

    Mina Ghanbari; Siamak Hossainpour; Ghader Rezazadeh

    2016-01-01

    In this paper, a mathematical model is presented for studying thin film damping of the surrounding fluid in an in-plane oscillating micro-beam resonator. The proposed model for this study is made up of a clamped-clamped micro-beam bound between two fixed layers. The micro-gap between the micro-beam and fixed layers is filled with air. As classical theories are not properly capable of pre-dicting the size dependence behaviors of the micro-beam, and also behavior of micro-scale fluid media, hence in the presented model, equation of motion governing longitudinal displacement of the micro-beam has been extracted based on non-local elasticity theory. Furthermore, the fluid field has been modeled based on micro-polar theory. These coupled equations have been simplified using Newton-Laplace and continuity equations. After transforming to non-dimensional form and linearizing, the equations have been discretized and solved simultaneously using a Galerkin-based reduced order model. Considering slip boundary conditions and applying a complex frequency approach, the equivalent damping ratio and quality factor of the micro-beam resonator have been obtained. The obtained values for the quality factor have been compared to those based on classical theories. We have shown that applying non-classical theories underestimate the values of the quality factor obtained based on classical theo-ries. The effects of geometrical parameters of the micro-beam and micro-scale fluid field on the quality factor of the res-onator have also been investigated.

  6. Thermal annealing of thin PECVD silicon-oxide films for airgap-based optical filters

    Science.gov (United States)

    Ghaderi, M.; de Graaf, G.; Wolffenbuttel, R. F.

    2016-08-01

    This paper investigates the mechanical and optical properties of thin PECVD silicon-oxide layers for optical applications. The different deposition parameters in PECVD provide a promising tool to manipulate and control the film structure. Membranes for use in optical filters typically are of ~λ/4n thickness and should be slightly tensile for remaining flat, thus avoiding scattering. The effect of the thermal budget of the process on the mechanical characteristics of the deposited films was studied. Films with compressive stress ranging from  -100 to 0 MPa were deposited. Multiple thermal annealing cycles were applied to wafers and the in situ residual stress and ex situ optical properties were measured. The residual stress in the films was found to be highly temperature dependent. Annealing during the subsequent process steps results in tensile stress from 100 to 300 MPa in sub-micron thick PECVD silicon-oxide films. However, sub-100 nm thick PECVD silicon-oxide layers exhibit a lower dependence on the thermal annealing cycles, resulting in lower stress variations in films after the annealing. It is also shown that the coefficient of thermal expansion, hence the residual stress in layers, varies with the thickness. Finally, several free-standing membranes were fabricated and the results are compared.

  7. Ion irradiation induced structural modifications and increase in elastic modulus of silica based thin films

    Science.gov (United States)

    Shojaee, S. A.; Qi, Y.; Wang, Y. Q.; Mehner, A.; Lucca, D. A.

    2017-01-01

    Ion irradiation is an alternative to heat treatment for transforming organic-inorganic thin films to a ceramic state. One major shortcoming in previous studies of ion-irradiated films is the assumption that constituent phases in ion-irradiated and heat-treated films are identical and that the ion irradiation effect is limited to changes in composition. In this study, we investigate the effects of ion irradiation on both the composition and structure of constituent phases and use the results to explain the measured elastic modulus of the films. The results indicated that the microstructure of the irradiated films consisted of carbon clusters within a silica matrix. It was found that carbon was present in a non-graphitic sp2-bonded configuration. It was also observed that ion irradiation caused a decrease in the Si-O-Si bond angle of silica, similar to the effects of applied pressure. A phase transformation from tetrahedrally bonded to octahedrally bonded silica was also observed. The results indicated the incorporation of carbon within the silica network. A combination of the decrease in Si-O-Si bond angle and an increase in the carbon incorporation within the silica network was found to be responsible for the increase in the elastic modulus of the films. PMID:28071696

  8. Organic photovoltaic cells based on ZnO thin film electrodes.

    Science.gov (United States)

    Ghica, C; Ion, L; Epurescu, G; Nistor, L; Antohe, S; Dinescu, M

    2010-02-01

    Due to its wide band-gap (ca. 3.4 eV), ZnO is a possible candidate material to be used as transparent electrode for a new class of photovoltaic (PV) cells. Also, an increased interest for the photovoltaic properties of several organic monomers and polymers (merocyanines, phthalocyanines and porphyrins) was noticed, because of their high optical absorption in the visible region of the spectrum allowing them to be used as potential inexpensive materials for solar cells. Preparation and properties of CuPc (copper phthalocyanine) based photovoltaic cells using ZnO thin films as transparent conductor electrodes are presented in this paper. ZnO layers are grown by pulsed laser deposition, while the organic layers are obtained by thermal evaporation. Structural characterization is performed by electron microscopy. Optical and transport properties of the mutilayered structures are obtained by electrical and spectro-photometric measurements. The influence of the ZnO-polymer interface on the external quantum efficiency (EQE) of the photovoltaic cell is clearly evidenced by our measurements.

  9. Femtosecond laser-induced periodic surface structure on the Ti-based nanolayered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Petrović, Suzana M.; Gaković, B.; Peruško, D. [Institute of Nuclear Science—Vinča, University of Belgrade, POB 522, 11001 Belgrade (Serbia); Stratakis, E. [Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, P.O. Box 1527, Gr-711 10 Heraklion (Greece); Department of Materials Science and Technology, University of Crete, 710 03 Heraklion, Crete (Greece); Bogdanović-Radović, I. [Ruđer Bošković Institute, P.O. Box 180, 10002 Zagreb (Croatia); Čekada, M. [Jožef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Fotakis, C. [Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, P.O. Box 1527, Gr-711 10 Heraklion (Greece); Department of Physics, University of Crete, 714 09 Heraklion, Crete (Greece); Jelenković, B. [Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia)

    2013-12-21

    Laser-induced periodic surface structures (LIPSSs) and chemical composition changes of Ti-based nanolayered thin films (Al/Ti, Ni/Ti) after femtosecond (fs) laser pulses action were studied. Irradiation is performed using linearly polarized Ti:Sapphire fs laser pulses of 40 fs pulse duration and 800 nm wavelength. The low spatial frequency LIPSS (LSFL), oriented perpendicular to the laser polarization with periods slightly lower than the irradiation wavelength, was typically formed at elevated laser fluences. On the contrary, high spatial frequency LIPSS (HSFL) with uniform period of 155 nm, parallel to the laser light polarization, appeared at low laser fluences, as well as in the wings of the Gaussian laser beam distribution for higher used fluence. LSFL formation was associated with the material ablation process and accompanied by the intense formation of nanoparticles, especially in the Ni/Ti system. The composition changes at the surface of both multilayer systems in the LSFL area indicated the intermixing between layers and the substrate. Concentration and distribution of all constitutive elements in the irradiated area with formed HSFLs were almost unchanged.

  10. Femtosecond laser-induced periodic surface structure on the Ti-based nanolayered thin films

    Science.gov (United States)

    Petrović, Suzana M.; Gaković, B.; Peruško, D.; Stratakis, E.; Bogdanović-Radović, I.; Čekada, M.; Fotakis, C.; Jelenković, B.

    2013-12-01

    Laser-induced periodic surface structures (LIPSSs) and chemical composition changes of Ti-based nanolayered thin films (Al/Ti, Ni/Ti) after femtosecond (fs) laser pulses action were studied. Irradiation is performed using linearly polarized Ti:Sapphire fs laser pulses of 40 fs pulse duration and 800 nm wavelength. The low spatial frequency LIPSS (LSFL), oriented perpendicular to the laser polarization with periods slightly lower than the irradiation wavelength, was typically formed at elevated laser fluences. On the contrary, high spatial frequency LIPSS (HSFL) with uniform period of 155 nm, parallel to the laser light polarization, appeared at low laser fluences, as well as in the wings of the Gaussian laser beam distribution for higher used fluence. LSFL formation was associated with the material ablation process and accompanied by the intense formation of nanoparticles, especially in the Ni/Ti system. The composition changes at the surface of both multilayer systems in the LSFL area indicated the intermixing between layers and the substrate. Concentration and distribution of all constitutive elements in the irradiated area with formed HSFLs were almost unchanged.

  11. Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications

    Directory of Open Access Journals (Sweden)

    Fábio F. Vidor

    2016-08-01

    Full Text Available Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high-k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the ION/IOFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V/V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates.

  12. Birefringent non-polarizing thin film design

    Institute of Scientific and Technical Information of China (English)

    QI Hongji; HONG Ruijin; HE Hongbo; SHAO Jianda; FAN Zhengxiu

    2005-01-01

    In this paper, 2×2 characteristic matrices of uniaxially anisotropic thin film for extraordinary and ordinary wave are deduced at oblique incidence. Furthermore, the reflectance and transmittance of thin films are calculated separately for two polarizations, which provide a new concept for designing non-polarizing thin films at oblique incidence. Besides, using the multilayer birefringent thin films, non-polarizing designs, such as beam splitter thin film at single wavelength, edge filter and antireflection thin film over visible spectral region are obtained at oblique incidence.

  13. Drying of thin colloidal films

    Science.gov (United States)

    Routh, Alexander F.

    2013-04-01

    When thin films of colloidal fluids are dried, a range of transitions are observed and the final film profile is found to depend on the processes that occur during the drying step. This article describes the drying process, initially concentrating on the various transitions. Particles are seen to initially consolidate at the edge of a drying droplet, the so-called coffee-ring effect. Flow is seen to be from the centre of the drop towards the edge and a front of close-packed particles passes horizontally across the film. Just behind the particle front the now solid film often displays cracks and finally the film is observed to de-wet. These various transitions are explained, with particular reference to the capillary pressure which forms in the solidified region of the film. The reasons for cracking in thin films is explored as well as various methods to minimize its effect. Methods to obtain stratified coatings through a single application are considered for a one-dimensional drying problem and this is then extended to two-dimensional films. Different evaporative models are described, including the physical reason for enhanced evaporation at the edge of droplets. The various scenarios when evaporation is found to be uniform across a drying film are then explained. Finally different experimental techniques for examining the drying step are mentioned and the article ends with suggested areas that warrant further study.

  14. Characterization and Modeling of Nano-organic Thin Film Phototransistors Based on 6,13(Triisopropylsilylethynyl)-Pentacene: Photovoltaic Effect

    Science.gov (United States)

    Jouili, A.; Mansouri, S.; Al-Ghamdi, Ahmed A.; El Mir, L.; Farooq, W. A.; Yakuphanoglu, F.

    2017-04-01

    Organic thin film transistors based on 6,13(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) with various channel widths and thicknesses of the active layer (300 nm and 135 nm) were photo-characterized. The photoresponse behavior and the gate field dependence of the charge transport were analyzed in detail. The surface properties of TIPS-pentacene deposited on silicon dioxide substrate were investigated using an atomic force microscope. We confirm that the threshold voltage values of the TIPS-pentacene transistor depend on the intensity of white light illumination. With the multiple trapping and release model, we have developed an analytical model that was applied to reproduce the experimental output characteristics of organic thin film transistors based on TIPS-pentacene under dark and under light illumination.

  15. Characterization and Modeling of Nano-organic Thin Film Phototransistors Based on 6,13(Triisopropylsilylethynyl)-Pentacene: Photovoltaic Effect

    Science.gov (United States)

    Jouili, A.; Mansouri, S.; Al-Ghamdi, Ahmed A.; El Mir, L.; Farooq, W. A.; Yakuphanoglu, F.

    2016-12-01

    Organic thin film transistors based on 6,13(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) with various channel widths and thicknesses of the active layer (300 nm and 135 nm) were photo-characterized. The photoresponse behavior and the gate field dependence of the charge transport were analyzed in detail. The surface properties of TIPS-pentacene deposited on silicon dioxide substrate were investigated using an atomic force microscope. We confirm that the threshold voltage values of the TIPS-pentacene transistor depend on the intensity of white light illumination. With the multiple trapping and release model, we have developed an analytical model that was applied to reproduce the experimental output characteristics of organic thin film transistors based on TIPS-pentacene under dark and under light illumination.

  16. MOF thin films: existing and future applications.

    Science.gov (United States)

    Shekhah, O; Liu, J; Fischer, R A; Wöll, Ch

    2011-02-01

    The applications and potentials of thin film coatings of metal-organic frameworks (MOFs) supported on various substrates are discussed in this critical review. Because the demand for fabricating such porous coatings is rather obvious, in the past years several synthesis schemes have been developed for the preparation of thin porous MOF films. Interestingly, although this is an emerging field seeing a rapid development a number of different applications on MOF films were either already demonstrated or have been proposed. This review focuses on the fabrication of continuous, thin porous films, either supported on solid substrates or as free-standing membranes. The availability of such two-dimensional types of porous coatings opened the door for a number of new perspectives for functionalizing surfaces. Also for the porous materials themselves, the availability of a solid support to which the MOF-films are rigidly (in a mechanical sense) anchored provides access to applications not available for the typical MOF powders with particle sizes of a few μm. We will also address some of the potential and applications of thin films in different fields like luminescence, QCM-based sensors, optoelectronics, gas separation and catalysis. A separate chapter has been devoted to the delamination of MOF thin films and discusses the potential to use them as free-standing membranes or as nano-containers. The review also demonstrates the possibility of using MOF thin films as model systems for detailed studies on MOF-related phenomena, e.g. adsorption and diffusion of small molecules into MOFs as well as the formation mechanism of MOFs (101 references).

  17. Influence of TiO2 particles on PVB foils used in silicon based thin film photovoltaic modules

    Science.gov (United States)

    Sinicco, Ivan; Gossla, Mario; Krull, Stefan; Rakusa, Fabia; Roth, Florian

    2010-08-01

    Transparent PVB lamination foils are widely used in thin-film solar modules. The application of a pigmented load composed by TiO2 particles in the foil formulation does not only influence the reflectance properties of this material, it has also a remarkable impact on other material parameters like resistivity and adhesion. The main objective of this study is to illustrate the properties of white lamination films based on polyvinyl butyral materials. A special insight will be on adhesion, foil resistivity and activation energies. Some performance results on modules will be also presented.

  18. Thin-film forces in pseudoemulsion films

    Energy Technology Data Exchange (ETDEWEB)

    Bergeron, V.; Radke, C.J. [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley Lab., CA (United States)

    1991-06-01

    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  19. On the quantification of unbound hydrogen in diamond-like carbon-based thin films

    NARCIS (Netherlands)

    Pei, Y.T.; Chechenin, N.G.; Chernykh, P.N.; Turkin, A; Vainchtein, David; Hosson, J.Th.M. De

    2009-01-01

    This paper presents a new and straightforward approach to quantify the content of unbound hydrogen in diamond-like carbon-based films. In the case of TiC/a-C:H nanocomposite films it is shown that the content of unbound and bound hydrogen can be deconvoluted via thermal release and elastic recoil de

  20. Advances in thin-film solar cells

    CERN Document Server

    Dharmadasa, I M

    2012-01-01

    This book concentrates on the latest developments in our understanding of solid-state device physics. The material presented is mainly experimental and based on CdTe thin-film solar cells. It extends these new findings to CIGS thin-film solar cells and presents a new device design based on graded bandgap multilayer solar cells. This design has been experimentally tested using the well-researched GaAs/AlGaAs system and initial devices have shown impressive device parameters. These devices are capable of absorbing all radiation (UV, visible, and infra-red) within the solar spectrum and combines

  1. Electronic and optoelectronic devices based on chirality-enriched wafer-scale single-wall carbon nanotube thin films

    Science.gov (United States)

    Gao, Weilu; He, Xiaowei; Xie, Lijuan; Zhang, Qi; Haroz, Erik; Doorn, Stephen K.; Kono, Junichiro

    2015-03-01

    The unique and rich material properties of single-wall carbon nanotubes (SWCNTs) make them attractive for nano-electronic and optoelectronic applications. Slight changes in tube diameter and wrapping angle, defined by the chirality indices (n, m), can dramatically modify the bandstructure, which can be utilized for designing devices with tailored properties. However, it remains to be a challenge to fabricate macroscopic, single-chirality devices. Here, we introduce a simple way of producing chirality-enriched wafer-scale SWCNT films by combining recently developed solution-based polymer-modified sorting method and vacuum filtration. The produced thin films can be easily transferred onto any substrate to have a CMOS compatible wafer. We fabricated a transistor of (6,5)-enriched SWCNTs with an on/off ratio >103. Large-scale photothermoelectric-effect-based and photovoltaic-effect-based photodetectors made of (6,6)- and (6,5)-enriched films, respectively, will also be discussed.

  2. Thin films under chemical stress

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  3. Fabrication of CdS/CdTe-Based Thin Film Solar Cells Using an Electrochemical Technique

    Directory of Open Access Journals (Sweden)

    I. M. Dharmadasa

    2014-06-01

    Full Text Available Thin film solar cells based on cadmium telluride (CdTe are complex devices which have great potential for achieving high conversion efficiencies. Lack of understanding in materials issues and device physics slows down the rapid progress of these devices. This paper combines relevant results from the literature with new results from a research programme based on electro-plated CdS and CdTe. A wide range of analytical techniques was used to investigate the materials and device structures. It has been experimentally found that n-, i- and p-type CdTe can be grown easily by electroplating. These material layers consist of nano- and micro-rod type or columnar type grains, growing normal to the substrate. Stoichiometric materials exhibit the highest crystallinity and resistivity, and layers grown closer to these conditions show n → p or p → n conversion upon heat treatment. The general trend of CdCl2 treatment is to gradually change the CdTe material’s n-type electrical property towards i-type or p-type conduction. This work also identifies a rapid structural transition of CdTe layer at 385 ± 5 °C and a slow structural transition at higher temperatures when annealed or grown at high temperature. The second transition occurs after 430 °C and requires more work to understand this gradual transition. This work also identifies the existence of two different solar cell configurations for CdS/CdTe which creates a complex situation. Finally, the paper presents the way forward with next generation CdTe-based solar cells utilising low-cost materials in their columnar nature in graded bandgap structures. These devices could absorb UV, visible and IR radiation from the solar spectrum and combine impact ionisation and impurity photovoltaic (PV effect as well as making use of IR photons from the surroundings when fully optimised.

  4. Thin-film solar cell

    OpenAIRE

    Metselaar, J.W.; Kuznetsov, V. I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface. In this context, the relationships 45 < alpha < 135 degrees and 45 < beta < 135 degrees apply. The invention also relates to a panel provided with a plurality of such t...

  5. Non-conventional photocathodes based on Cu thin films deposited on Y substrate by sputtering

    Science.gov (United States)

    Perrone, A.; D'Elia, M.; Gontad, F.; Di Giulio, M.; Maruccio, G.; Cola, A.; Stankova, N. E.; Kovacheva, D. G.; Broitman, E.

    2014-07-01

    Copper (Cu) thin films were deposited on yttrium (Y) substrate by sputtering. During the deposition, a small central area of the Y substrate was shielded to avoid the film deposition and was successively used to study its photoemissive properties. This configuration has two advantages: the cathode presents (i) the quantum efficiency and the work function of Y and (ii) high electrical compatibility when inserted into the conventional radio-frequency gun built with Cu bulk. The photocathode was investigated by scanning electron microscopy to determine surface morphology. X-ray diffraction and atomic force microscopy studies were performed to compare the structure and surface properties of the deposited film. The measured electrical resistivity value of the Cu film was similar to that of high purity Cu bulk. Film to substrate adhesion was also evaluated using the Daimler-Benz Rockwell-C adhesion test method. Finally, the photoelectron performance in terms of quantum efficiency was obtained in a high vacuum photodiode cell before and after laser cleaning procedures. A comparison with the results obtained with a twin sample prepared by pulsed laser deposition is presented and discussed.

  6. Non-conventional photocathodes based on Cu thin films deposited on Y substrate by sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Perrone, A. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); National Institute of Nuclear Physics and University of Salento, 73100 Lecce (Italy); D’Elia, M. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); National Institute of Nuclear Physics and University of Salento, 73100 Lecce (Italy); Di Giulio, M.; Maruccio, G. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); Cola, A. [National Council Research, Institute for Microelectronics and Microsystems, 73100 Lecce (Italy); Stankova, N.E. [Institute of Electronics, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); Kovacheva, D.G. [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, 1113 Sofia (Bulgaria); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2014-07-01

    Copper (Cu) thin films were deposited on yttrium (Y) substrate by sputtering. During the deposition, a small central area of the Y substrate was shielded to avoid the film deposition and was successively used to study its photoemissive properties. This configuration has two advantages: the cathode presents (i) the quantum efficiency and the work function of Y and (ii) high electrical compatibility when inserted into the conventional radio-frequency gun built with Cu bulk. The photocathode was investigated by scanning electron microscopy to determine surface morphology. X-ray diffraction and atomic force microscopy studies were performed to compare the structure and surface properties of the deposited film. The measured electrical resistivity value of the Cu film was similar to that of high purity Cu bulk. Film to substrate adhesion was also evaluated using the Daimler–Benz Rockwell-C adhesion test method. Finally, the photoelectron performance in terms of quantum efficiency was obtained in a high vacuum photodiode cell before and after laser cleaning procedures. A comparison with the results obtained with a twin sample prepared by pulsed laser deposition is presented and discussed.

  7. Hybrid organotin and tin oxide-based thin films processed from alkynylorganotins: synthesis, characterization, and gas sensing properties.

    Science.gov (United States)

    Renard, Laetitia; Brötz, Joachim; Fuess, Hartmut; Gurlo, Aleksander; Riedel, Ralf; Toupance, Thierry

    2014-10-08

    Hydrolysis-condensation of bis(triprop-1-ynylstannyl)butylene led to nanostructured bridged polystannoxane films yielding tin dioxide thin layers upon UV-treatment or annealing in air. According to Fourier transform infrared (FTIR) spectroscopy, contact angle measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM) data, the films were composed of a network of aggregated "pseudo-particles", as calcination at 600 °C is required to form cassiterite nanocrystalline SnO2 particles. In the presence of reductive gases such as H2 and CO, these films gave rise to highly sensitive, reversible, and reproducible responses. The best selectivity toward H2 was reached at 150 °C with the hybrid thin films that do not show any response to CO at 20-200 °C. On the other hand, the SnO2 films prepared at 600 °C are more sensitive to H2 than to CO with best operating temperature in the 300-350 °C range. This organometallic approach provides an entirely new class of gas-sensing materials based on a class II organic-inorganic hybrid layer, along with a new way to include organic functionality in gas sensing metal oxides.

  8. Effect of tellurium deposition rate on the properties of Cu-In-Te based thin films and solar cells

    Science.gov (United States)

    Mise, Takahiro; Nakada, Tokio

    2011-01-01

    To investigate the effects of tellurium (Te) deposition rate on the properties of Cu-In-Te based thin films (Cu/In=0.30-0.31), the films were grown on both bare and Mo-coated soda-lime glass substrates at 200 °C by co-evaporation using a molecular beam epitaxy system. The microstructural properties were examined by means of scanning electron microscopy and X-ray diffraction. The crystalline quality of the films was improved with increase in the deposition rate of Te, and exhibited a single CuIn 3Te 5 phase with a highly preferred (1 1 2) orientation. Te-deficient film (Te/(Cu+In)=1.07) grown with a low Te deposition rate showed a narrow bandgap of 0.99 eV at room temperature. The solar cell performance was affected by the deposition rate of Te. The best solar cell fabricated using CuIn 3Te 5 thin films grown with the highest deposition rate of Te (2.6 nm/s) yielded a total area (0.50 cm 2) efficiency of 4.4% ( Voc=309 mV, Jsc=28.0 mA/cm 2, and FF=0.509) without light soaking.

  9. Electrodeposition of In{sub 2}O{sub 3} thin films from a dimethylsulfoxide based electrolytic solution

    Energy Technology Data Exchange (ETDEWEB)

    Henriquez, R.; Munoz, E.; Gomez, H. [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Curauma Valparaiso (Chile); Dalchiele, E.A.; Marotti, R.E. [Instituto de Fisica and CINQUIFIMA, Facultad de Ingenieria, Montevideo (Uruguay); Martin, F.; Leinen, D.; Ramos-Barrado, J.R. [Laboratorio de Materiales y Superficie, Departamento de Fisica Aplicada and Ingenieria Quimica, Universidad de Malaga (Spain)

    2013-02-15

    Indium (III) oxide (In{sub 2}O{sub 3}) thin films have been obtained after heat treatment of In(OH){sub 3} precursor layers grown by a potential cycling electrodeposition (PCED) method from a dimethylsulfoxide (DMSO) based electrolytic solution onto fluorine-doped tin oxide (FTO) coated glass substrates. X-ray diffraction (XRD) measurements indicate the formation of a polycrystalline In{sub 2}O{sub 3} phase with a cubic structure. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed a smooth morphology of the In{sub 2}O{sub 3} thin films after an optimized heat treatment had been developed. The surface composition and chemical state of the semiconductor films was established by X-ray photoelectron spectroscopy analysis. The nature of the semiconductor material, flat band potential and donor density were determined from Mott-Schottky plots. This study reveals that the In{sub 2}O{sub 3} films exhibited n-type conductivity with an average donor density of 2.2 x 10{sup 17} cm{sup -3}. The optical characteristics were determined through transmittance spectra. The direct and indirect band gap values obtained are according to the accepted values for the In{sub 2}O{sub 3} films of 2.83 and 3.54 eV for the indirect and direct band gap values. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Sol-Gel-Based Titania-Silica Thin Film Overlay for Long Period Fiber Grating-Based Biosensors.

    Science.gov (United States)

    Chiavaioli, Francesco; Biswas, Palas; Trono, Cosimo; Jana, Sunirmal; Bandyopadhyay, Somnath; Basumallick, Nandini; Giannetti, Ambra; Tombelli, Sara; Bera, Susanta; Mallick, Aparajita; Baldini, Francesco

    2015-12-15

    An evanescent wave optical fiber biosensor based on titania-silica-coated long period grating (LPG) is presented. The chemical overlay, which increases the refractive index (RI) sensitivity of the sensor, consists of a sol-gel-based titania-silica thin film, deposited along the sensing portion of the fiber by means of the dip-coating technique. Changing both the sol viscosity and the withdrawal speed during the dip-coating made it possible to adjust the thickness of the film overlay, which is a crucial parameter for the sensor performance. After the functionalization of the fiber surface using a methacrylic acid/methacrylate copolymer, an antibody/antigen (IgG/anti-IgG) assay was carried out to assess the performance of sol-gel based titania-silica-coated LPGs as biosensors. The analyte concentration was determined from the wavelength shift at the end of the binding process and from the initial binding rate. This is the first time that a sol-gel based titania-silica-coated LPG is proposed as an effective and feasible label-free biosensor. The specificity of the sensor was validated by performing the same model assay after spiking anti-IgG into human serum. With this structured LPG, detection limits of the order of tens of micrograms per liter (10(-11) M) are attained.

  11. An economic approach to fabricate photo sensor based on nanostructured ZnO thin films

    Science.gov (United States)

    Huse, Nanasaheb; Upadhye, Deepak; Sharma, Ramphal

    2016-05-01

    Nanostructural ZnO Thin Films have been synthesized by simple and economic Chemical Bath Deposition technique onto glass substrate with bath temperature at 60°C for 1 hour. Structural, Optical, Electrical and topographical properties of the prepared Thin Films were investigated by GIXRD, I-V Measurement System, UV-Visible Spectrophotometer and AFM respectively. Calculated lattice parameters are in good agreement with the standard JCPDS card (36-1451) values, exhibits Hexagonal Wurtzite crystal structure. I-V Measurement curve has shown ohmic nature in dark condition and responds to light illumination which reveals Photo sensor properties. After illumination of 60W light, decrease in resistance was observed from 110.9 KΩ to 104.4 KΩ. The change in current and calculated Photo sensitivity was found to be 3.51 µA and 6.3% respectively. Optical band gap was found to be 3.24 eV. AFM images revealed uniform deposition over entire glass substrate with 32.27 nm average roughness of the film.

  12. Broadband epsilon-near-zero metamaterials based on metal-polymer composite thin films

    Science.gov (United States)

    Pinchuk, Pavlo; Jiang, Ke

    2015-10-01

    Epsilon-near-zero (ENZ) metamaterials are designed to exhibit a near-zero response for the real part of the dielectric permittivity at a given frequency or in a specific frequency range. Typically, this frequency range is relatively small. In this paper, we present an approach to broaden this range by controlling the size of the nanoparticles embedded in a thin film. Noble metal nanoparticles exhibit an external size effect that redshifts the Surface Plasmon Resonance frequency with an increase of the size of the particles. The absorption spectrum of a material can be directly related to its dielectric permittivity via the Kramers-Kronig relations. We use the Kramers-Kronig relations to retrieve the complex effective dielectric permittivity of a composite film, which is designed to exhibit ENZ behavior over a broad frequency range. We synthesize a composite thin film embedded with metal nanoparticles of a broad size distribution. Such a material exhibits a broad SPR, and, in turn, broadband ENZ behavior.

  13. Organic Thin-Film Transistors Based on Vapor-Deposition Polymerized Gate Insulators

    Science.gov (United States)

    Pyo, S. W.; Lee, D. H.; Koo, J. R.; Kim, J. H.; Shim, J. H.; Kim, Y. K.

    2005-01-01

    In this study, we demonstrated that organic thin-film transistors (OTFTs) can be fabricated by using organic gate insulators using a vapor deposition polymerization (VDP) process. We found that electrical output characteristics in our organic thin-film transistors using a staggered-inverted top-contact structure show a saturated slope in the saturation region and a subthreshold nonlinearity in the triode region. The field-effect mobility, threshold voltage, and on-off current ratio of OTFTs using 4,4'-oxydiphthalic anhydride[ODPA]-4,4'-oxydianiline[ODA] and 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride[6FDA]-[ODA] as gate insulators with a thickness of 0.45 μm were about 0.13-0.5 cm2/Vs, -7 V, and 104, respectively. To form polyimide as a gate insulator, the VDP process was also introduced instead of a spin-coating process, in which a polyimide film was codeposited by the high-vacuum thermal evaporation of ODPA and ODA, 6FDA and ODA, and cured at 150°C for 1 h followed by 200°C for 1 h after codeposition. To explain the differences in the electrical characteristics caused by the insulators, the morphology of pentacene on the polyimide from ODPA-ODA was compared with that from 6FDA-ODA, respectively.

  14. Effect of post deposition annealing on the performance of copper phthalocyanine based organic thin film transistor

    Science.gov (United States)

    Padma, N.; Sawant, Shilpa N.; Sen, Shaswati; Gupta, S. K.

    2013-02-01

    The electrical performance of copper phthalocyanine (CuPc) based OFETs on SiO2 dielectric was studied with and without post deposition annealing of CuPc films. Field effect mobility of holes and the drain current modulation (Ion/Ioff) was found to increase by one order for devices with annealed films as compared to that with as deposited film. This is attributed to well connected grains and increased crystallinity of CuPc film. Subthreshold slope (SS) was found to be reducing with increase in annealing temperature and was minimum for the device with CuPc film annealed at 225 °C, implying lesser traps affecting the mobility of charge carriers.

  15. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  16. Characterization of Sulfur Bonding in CdS:O Buffer Layers for CdTe-based Thin-Film Solar Cells.

    Science.gov (United States)

    Duncan, Douglas A; Kephart, Jason M; Horsley, Kimberly; Blum, Monika; Mezher, Michelle; Weinhardt, Lothar; Häming, Marc; Wilks, Regan G; Hofmann, Timo; Yang, Wanli; Bär, Marcus; Sampath, Walajabad S; Heske, Clemens

    2015-08-05

    On the basis of a combination of X-ray photoelectron spectroscopy and synchrotron-based X-ray emission spectroscopy, we present a detailed characterization of the chemical structure of CdS:O thin films that can be employed as a substitute for CdS layers in thin-film solar cells. It is possible to analyze the local chemical environment of the probed elements, in particular sulfur, hence allowing insights into the species-specific composition of the films and their surfaces. A detailed quantification of the observed sulfur environments (i.e., sulfide, sulfate, and an intermediate oxide) as a function of oxygen content is presented, allowing a deliberate optimization of CdS:O thin films for their use as alternative buffer layers in thin-film photovoltaic devices.

  17. Feasibility Study of Thin Film Thermocouple Piles

    Science.gov (United States)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  18. Emittance Theory for Thin Film Selective Emitter

    Science.gov (United States)

    Chubb, Donald L.; Lowe, Roland A.; Good, Brian S.

    1994-01-01

    Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

  19. Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications

    Science.gov (United States)

    Smith, L.; Murphy, J. W.; Kim, J.; Rozhdestvenskyy, S.; Mejia, I.; Park, H.; Allee, D. R.; Quevedo-Lopez, M.; Gnade, B.

    2016-12-01

    Solid-state neutron detectors offer an alternative to 3He based detectors, but suffer from limited neutron efficiencies that make their use in security applications impractical. Solid-state neutron detectors based on single crystal silicon also have relatively high gamma-ray efficiencies that lead to false positives. Thin film polycrystalline CdTe based detectors require less complex processing with significantly lower gamma-ray efficiencies. Advanced geometries can also be implemented to achieve high thermal neutron efficiencies competitive with silicon based technology. This study evaluates these strategies by simulation and experimentation and demonstrates an approach to achieve >10% intrinsic efficiency with <10-6 gamma-ray efficiency.

  20. Pyroelectric coupling in thin film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Karpov, Victor G.; Shvydka, Diana [Department of Physics and Astronomy, University of Toledo, OH (United States)

    2007-07-15

    We propose a theory of thin film photovoltaics in which one of the polycrystalline films is made of a pyroelectric material grains such as CdS. That film is shown to generate strong polarization improving the device open circuit voltage. Implications and supporting facts for the major photovoltaic types based on CdTe and CuIn(Ga)Se{sub 2} absorber layers are discussed. Band diagram of a pyroelectric (CdS) based PV junction. Arrows represent the charge carrier photo-generation. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Thin-liquid-film evaporation at contact line

    Institute of Scientific and Technical Information of China (English)

    Hao WANG; Zhenai PAN; Zhao CHEN

    2009-01-01

    When a liquid wets a solid wall, the extended meniscus near the contact line may be divided into three regions: a nonevaporating region, where the liquid is adsorbed on the wall; a transition region or thin-film region, where effects of long-range molecular forces (disjoining pressure) are felt; and an intrinsic meniscus region, where capillary forces dominate. The thin liquid film, with thickness from nanometers up to micrometers, covering the transition region and part of intrinsic meniscus, is gaining interest due to its high heat transfer rates. In this paper, a review was made of the researches on thin-liquid-film evaporation. The major characteristics of thin film, thin-film modeling based on continuum theory, simulations based on molecular dynamics, and thin-film profile and temperature measurements were summarized.

  2. Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

    KAUST Repository

    Salas Villaseñor, Ana L.

    2014-06-01

    Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.

  3. Electrochemical Synthesis of a Microporous Conductive Polymer Based on a Metal-Organic Framework Thin Film

    KAUST Repository

    Lu, Chunjing

    2014-05-22

    A new approach to preparing 3D microporous conductive polymer has been demonstrated in the electrochemical synthesis of a porous polyaniline network with the utilization of a MOF thin film supported on a conducting substrate. The prepared porous polyaniline with well-defined uniform micropores of 0.84 nm exhibits a high BET surface area of 986 m2 g−1 and a high electric conductivity of 0.125 S cm−1 when doped with I2, which is superior to existing porous conducting materials of porous MOFs, CMPs, and COFs.

  4. Shielding superconductors with thin films

    CERN Document Server

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P

    2015-01-01

    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  5. Highly oriented Bi-based thin films with zero resistance at 106 K

    Energy Technology Data Exchange (ETDEWEB)

    Kula, W.; Sobolewski, R.; Gorecka, J.; Lewardowski, S.L. (Instytut Fizki, Polska Akademia Nauk. Al. Lotnikow 32/46, PL-02668 Warszawa (PL))

    1991-03-01

    This paper reports on fabrication and characterization of nearly single-phase superconducting Bi{sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub x} thin films. The films were dc magnetron sputtered from heavily Pb-doped (Pb/Bi molar ratios up to 1.25), sintered targets on unheated MgO, SrTiO{sub 3}, CaNdAlO{sub 4}, and SrLaAlO{sub 4} single crystals. For the films grown on the (100) oriented MgO substrate, less than 1 hour of annealing in air at 870{degrees} C was sufficient to obtain more than 90% of the 110-K-phase material, with highly c-axis oriented crystalline structure and zero resistivity at 106 K. The films fabricated on the other substrates also exhibited a narrow superconducting transition and were fully superconducting above 100 K, but they consisted of a mixed-phase material with a large percentage of the 80 K phase.

  6. Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

    Science.gov (United States)

    Lee, Seung-Yun; Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Park, Young-Sam; Ryu, Sang-Ouk; Yu, Byoung-Gon; Kim, Sang-Hoon; Lee, Sang-Heung

    2007-10-01

    The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While p-type SiGe bottom electrodes were formed using in situ doping techniques, n-type ones could be made in a different manner where phosphorus atoms diffused from highly doped silicon underlayers to undoped SiGe films. The p-n heterojunction did not form between the p-type GST and n-type SiGe layers, and the semiconduction type of the SiGe alloys did not influence the memory device switching. It was confirmed that an optimum resistivity value existed for memory operation in spite of proportionality of Joule heating to electrical resistivity. The very high resistivity of the SiGe film had no effect on the reduction of reset current, which might result from the resistance decrease of the SiGe alloy at high temperatures.

  7. Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung-Yun [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)], E-mail: seungyun@etri.re.kr; Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Park, Young-Sam; Ryu, Sang-Ouk; Yu, Byoung-Gon; Kim, Sang-Hoon; Lee, Sang-Heung [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)

    2007-10-31

    The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While p-type SiGe bottom electrodes were formed using in situ doping techniques, n-type ones could be made in a different manner where phosphorus atoms diffused from highly doped silicon underlayers to undoped SiGe films. The p-n heterojunction did not form between the p-type GST and n-type SiGe layers, and the semiconduction type of the SiGe alloys did not influence the memory device switching. It was confirmed that an optimum resistivity value existed for memory operation in spite of proportionality of Joule heating to electrical resistivity. The very high resistivity of the SiGe film had no effect on the reduction of reset current, which might result from the resistance decrease of the SiGe alloy at high temperatures.

  8. Mass Transfer in Amperometric Biosensors Based on Nanocomposite Thin Films of Redox Polymers and Oxidoreductases

    Directory of Open Access Journals (Sweden)

    Aleksandr L. Simonian

    2002-03-01

    Full Text Available Mass transfer in nanocomposite hydrogel thin films consisting of alternating layers of an organometallic redox polymer (RP and oxidoreductase enzymes was investigated. Multilayer nanostructures were fabricated on gold surfaces by the deposition of an anionic self-assembled monolayer of 11-mercaptoundecanoic acid, followed by the electrostatic binding of a cationic redox polymer, poly[vinylpyridine Os(bis-bipyridine2Clco-allylamine], and an anionic oxidoreductase. Surface plasmon resonance spectroscopy, Fourier transform infrared external reflection spectroscopy (FTIR-ERS, ellipsometry and electrochemistry were employed to characterize the assembly of these nanocomposite films. Simultaneous SPR/electrochemistry enabled real time observation of the assembly of sensing components, changes in film structure with electrode potential, and the immediate, in situ electrochemical verification of substrate-dependent current upon the addition of enzyme to the multilayer structure. SPR and FTIR-ERS studies also showed no desorption of polymer or enzyme from the nanocomposite structure when stored in aqueous environment occurred over the period of three weeks, suggesting that decreasing in substrate sensitivity were due to loss of enzymatic activity rather than loss of film compounds from the nanostructure.

  9. Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

    Science.gov (United States)

    Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman

    2016-05-01

    Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatch between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or

  10. Crystal structure of fiber structured pentacene thin films

    OpenAIRE

    2007-01-01

    This PhD thesis presents a technique based on the grazing incidence crystal truncation rod (GI-CTR) X-ray diffraction method used to solve the crystal structure of substrate induced fiber structured organic thin films. The crystal structures of pentacene thin films grown on technologically relevant gate dielectric substrates are reported. It is widely recognized, that the intrinsic charge transport properties in organic thin film transistors (OTFTs) depend strongly on the crystal structur...

  11. Micromotors using magnetostrictive thin films

    Science.gov (United States)

    Claeyssen, Frank; Le Letty, Ronan; Barillot, Francois; Betz, Jochen; MacKay, Ken; Givord, Dominique; Bouchilloux, Philippe

    1998-07-01

    This study deals with a micromotor based on the use of magnetostrictive thin films. This motor belongs to the category of the Standing Wave Ultrasonic Motors. The active part of the motor is the rotor, which is a 100 micrometers thick ring vibrating in a flexural mode. Teeth (300 micrometers high) are placed on special positions of the rotor and produce an oblique motion which can induce the relative motion of any object in contact with them. The magnetic excitation field is radial and uses the transverse coupling of the 4 micrometers thick magnetostrictive film. The film, deposited by sputtering on the ring, consists of layers of different rare-earth/iron alloys and was developed during a European Brite-Euram project. The finite element technique was used in order to design a prototype of the motor and to optimize the active rotor and the energizer coil. The prototype we built delivered a speed of 30 turns per minute with a torque of 2 (mu) N.m (without prestress applied on the rotor). Our experimental results show that the performance of this motor could easily be increased by a factor of 5. The main advantage of this motor is the fact that it is remotely powered and controlled. The excitation coil, which provides both power and control, can be placed away from the active rotor. Moreover, the rotor is completely wireless and is not connected to its support or to any other part. It is interesting to note that it would not be possible to build this type of motor using piezoelectric technology. Medical applications of magnetostrictive micromotors could be found for internal microdistributors of medication (the coil staying outside the body). Other applications include remote control micropositioning, micropositioning of optical components, and for the actuation of systems such as valves, electrical switches, and relays.

  12. Ferroelectric Thin Film Development

    Science.gov (United States)

    2003-12-10

    less. The film temper- ature is monitored by thermocouple sensors. Process gases pass through the chamber during the process. An advantage of RTP is the...semiconductor InSe ,” J. Appl. Phys., vol. 86, pp. 5687–5691, November 1999. 37. R. Mollers and R. Memming Ber. Bunsenges. Phys. Chem., vol. 76, 1972. 38. M

  13. Biocorrosion investigation of two shape memory nickel based alloys: Ni-Mn-Ga and thin film NiTi.

    Science.gov (United States)

    Stepan, L L; Levi, D S; Gans, E; Mohanchandra, K P; Ujihara, M; Carman, G P

    2007-09-01

    Thin film nitinol and single crystal Ni-Mn-Ga represent two new shape memory materials with potential to be used as percutaneously placed implant devices. However, the biocompatibility of these materials has not been adequately assessed. Immersion tests were conducted on both thin film nitinol and single crystal Ni-Mn-Ga in Hank's balanced salt solution at 37 degrees C and pH 7.4. After 12 h, large pits were found on the Ni-Mn-Ga samples while thin film nitinol displayed no signs of corrosion. Further electrochemical tests on thin film nitinol samples revealed breakdown potentials superior to a mechanically polished nitinol disc. These results suggest that passivation or electropolishing of thin film nitinol maybe unnecessary to promote corrosion resistance.

  14. Polarization Fatigue in Ferroelectric Thin Films

    Institute of Scientific and Technical Information of China (English)

    王忆; K.H.WONG; 吴文彬

    2002-01-01

    The fatigue problem in ferroelectric thin films is investigated based on the switched charge per unit area versus switching cycles. The temperature, dielectric permittivity, voltage bias, frequency and defect valence dependent switching polarization properties are calculated quantitatively with an extended Dawber-Scott model. The results are in agreement with the recent experiments.

  15. Dyakonov-Tamm waves-based optical sensing using sculptured nematic thin film

    Science.gov (United States)

    Abbas, Farhat; Naqvi, Qaisar A.; Faryad, Muhammad

    2015-06-01

    Dyakonov-Tamm (DT) waves are highly sensitive to the constitutive properties of the partnering materials near the interface. DT waves are excited at the interface of two dielectric materials of which at least one is anisotropic and periodically nonhomogeneous normal to their interface. Sculptured nematic thin film (SNTF) is a good candidate for the periodically nonhomogeneous dielectric partner for optical sensing of a fluid due to its porosity. The nanoscale parameters of an uninfiltrated SNTF obtained from the inverse Bruggeman homogenization formalism were used in the forward Bruggeman homogenization formalism to determine the constitutive parameters for the infiltrated SNTF. The sensitivity of DT waves to the refractive index was analyzed for two possible sensing modalities and it was found that the sensitivity was comparable to that of the chiral sculptured thin films (STFs) made of the same material as of the SNTF. This implies that the sensing with DT waves is robust, is independent of the morphology of the partnering nonhomogeneous dielectric material and could make the sensing easier since SNTFs are easier to fabricate than the chiral STFs.

  16. Reliability of vibration energy harvesters of metal-based PZT thin films

    Science.gov (United States)

    Tsujiura, Y.; Suwa, E.; Kurokawa, F.; Hida, H.; Kanno, I.

    2014-11-01

    This paper describes the reliability of piezoelectric vibration energy harvesters (PVEHs) of Pb(Zr,Ti)O3 (PZT) thin films on metal foil cantilevers. The PZT thin films were directly deposited onto the Pt-coated stainless-steel (SS430) cantilevers by rf-magnetron sputtering, and we observed their aging behavior of power generation characteristics under the resonance vibration condition for three days. During the aging measurement, there was neither fatigue failure nor degradation of dielectric properties in our PVEHs (length: 13 mm, width: 5.0 mm, thickness: 104 μm) even under a large excitation acceleration of 25 m/s2. However, we observed clear degradation of the generated electric voltage depending on excitation acceleration. The decay rate of the output voltage was 5% from the start of the measurement at 25 m/s2. The transverse piezoelectric coefficient (e31,f) also degraded with almost the same decay rate as that of the output voltage; this indicates that the degradation of output voltage was mainly caused by that of piezoelectric properties. From the decay curves, the output powers are estimated to degrade 7% at 15 m/s2 and 36% at 25 m/s2 if we continue to excite the PVEHs for 30 years.

  17. Properties of Hydrogen Sulfide Sensors Based on Thin Films of Tin Dioxide and Tungsten Trioxide

    Science.gov (United States)

    Sevastianov, E. Yu.; Maksimova, N. K.; Chernikov, E. V.; Sergeichenko, N. V.; Rudov, F. V.

    2016-12-01

    The effect of hydrogen sulfide in the concentration range of 0-100 ppm on the characteristics of thin films of tin dioxide and tungsten trioxide obtained by the methods of magnetron deposition and modified with gold in the bulk and on the surface is studied. The impurities of antimony and nickel have been additionally introduced into the SnO2 bulk. An optimal operating temperature of sensors 350°C was determined, at which there is a satisfactory correlation between the values of the response to H2S and the response time. Degradation of the sensor characteristics is investigated in the long-term ( 0.5-1.5 years) tests at operating temperature and periodic exposure to hydrogen sulfide, as well as after conservation of samples in the laboratory air. It is shown that for the fabrication of H2S sensors, the most promising are thin nanocrystalline Au/WO3:Au films characterized by a linear concentration dependence of the response and high stability of parameters during exploitation.

  18. Metallic Thin-Film Bonding and Alloy Generation

    Science.gov (United States)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  19. Tailoring electronic structure of polyazomethines thin films

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2010-09-01

    Full Text Available Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic devices.Findings: The method used allow for pure pristine polymer thin films to be prtepared without any unintentional doping taking place during prepoaration methods. This is a method based on polycondensation process, where polymer chain developing is running directly due to chemical reaction between molecules of bifunctional monomers. The method applied to prepare thin films of polyazomethines takes advantage of monomer transporting by mreans of neutral transport agent as pure argon is.Research limitations/implications: The main disadvantage of alternately conjugated polymers seems to be quite low mobility of charge carrier that is expected to be a consequence of their backbone being built up of sp2 hybridized carbon and nitrogen atoms. Varying technological conditions towards increasing reagents mass transport to the substrate is expected to give such polyazomethine thin films organization that phenylene rin stacking can result in special π electron systems rather than linear ones as it is the case.Originality/value: Our results supply with original possibilities which can be useful in ooking for good polymer materials for optoelectronic and photovoltaic applications. These results have been gained on polyazomethine thin films but their being isoelectronic counterpart to widely used poly p-phenylene vinylene may be very convenient to develop high efficiency polymer solar cells

  20. Humidity sensing characteristics of hydrotungstite thin films

    Indian Academy of Sciences (India)

    G V Kunte; S A Shivashankar; A M Umarji

    2008-11-01

    Thin films of the hydrated phase of tungsten oxide, hydrotungstite (H2WO4.H2O), have been grown on glass substrates using a dip-coating technique. The -axis oriented films have been characterized by X-ray diffraction and scanning electron microscopy. The electrical conductivity of the films is observed to vary with humidity and selectively show high sensitivity to moisture at room temperature. In order to understand the mechanism of sensing, the films were examined by X-ray diffraction at elevated temperatures and in controlled atmospheres. Based on these observations and on conductivity measurements, a novel sensing mechanism based on protonic conduction within the surface layers adsorbed onto the hydrotungstite film is proposed.

  1. Intrinsic instability of thin liquid films on nanostructured surfaces

    Science.gov (United States)

    Rokoni, Arif; Hu, Han; Sun, Liyong; Sun, Ying

    2016-11-01

    The instability of a thin liquid film on nanostructures is not well understood but is important in liquid-vapor two-phase heat transfer (e.g., thin film evaporation and boiling), lubrication, and nanomanufacturing. In thin film evaporation, the comparison between the non-evaporating film thickness and the critical film breakup thickness determines the stability of the film: the film becomes unstable when the critical film breakup thickness is larger than the non-evaporating film thickness. In this study, a closed-form model is developed to predict the critical breakup thickness of a thin liquid film on 2D periodic nanostructures based on minimization of system free energy in the limit of a liquid monolayer. Molecular dynamics simulations are performed for water thin films on square nanostructures of varying depth and wettability and the simulations agree with the model predictions. The results show that the critical film breakup thickness increases with the nanostructure depth and the surface wettability. The model developed here enables the prediction of the minimum film thickness for stable thin film evaporation on a given nanostructure.

  2. Solution-based Syntheses of Iron Pyrite Thin Films for Photovoltaic and Protein Foot-printing Applications

    Science.gov (United States)

    El Makkaoui, Mohammed

    Iron pyrite (cubic FeS2) is a non-toxic, earth abundant semiconductor possessing a set of excellent optical/electronic properties for serving as an absorber layer in PV devices. Additionally, pyrite is a very efficient hydroxyl radical generator via Fenton chemistry and has shown promise in oxidative protein and DNA foot-printing application. The main focus of this thesis is on fabricating phase and elementally pure iron pyrite thin films using a solution-based approach that employs hydrazine as a solvent. A precursor ink is formed at room temperature by mixing elemental iron and sulfur in anhydrous hydrazine and then deposited on Mo-coated glass substrates, via spin coating, to yield amorphous iron sulfide films that are then annealed in H2S (340°C) and sulfur gas (≤ 500 °C) to form uniform, polycrystalline and phase pure pyrite films with densely packed grains. This approach is likely to yield the most elementally pure pyrite thin films made to date, through a very simple and scalable process. The ink has shown to be very sensitive to environmental conditions and has a very short shelf life (˜1 day). Additionally, the film microstructure is greatly influenced by the S:Fe concentration ratio that when tuned to 3:1, yielded uniform, robust and optically flat iron sulfide thin films with an optimal thickness (˜320 nm) for PV application. The results however were not reproducible, mainly due to failure in applying multiple layers without compromising film morphology. Thinner (films, on the other hand, are reproducibly produced, but are too thin to be employed in PV devices. Direct annealing in sulfur gas at 475°C for 4 hours, bypassing the > 12 hour H2S annealing step, yielded phase pure pyrite films, with good morphology, at lower processing time and annealing temperatures (polymer laminates for protein foot-printing application in collaboration with the Brenowitz lab at the Albert Einstein College of Medicine and the Khine lab at the University of California

  3. Design and Simulation of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye

    2005-01-01

    A new thin film pulse transformer for using in ISND and ADSL systems has been designed based on a domain wall pinning model, the parameters of nano-magnetic thin film such as permeability and coercivity can be calculated. The main properties of the thin film transformer including the size,parallel inductance, Q value and turn ratio have been simulated and optimized. Simulation results show that the thin film transformer can be fairly operated in a frequency range of 0. 001~20 MHz.

  4. Novel top-contact monolayer pentacene-based thin-film transistor for ammonia gas detection.

    Science.gov (United States)

    Mirza, Misbah; Wang, Jiawei; Li, Dexing; Arabi, S Atika; Jiang, Chao

    2014-04-23

    We report on the fabrication of an organic field-effect transistor (OFET) of a monolayer pentacene thin film with top-contact electrodes for the aim of ammonia (NH3) gas detection by monitoring changes in its drain current. A top-contact configuration, in which source and drain electrodes on a flexible stamp [poly(dimethylsiloxane)] were directly contacted with the monolayer pentacene film, was applied to maintain pentacene arrangement ordering and enhance the monolayer OFET detection performance. After exposure to NH3 gas, the carrier mobility at the monolayer OFET channel decreased down to one-third of its original value, leading to a several orders of magnitude decrease in the drain current, which tremendously enhanced the gas detection sensitivity. This sensitivity enhancement to a limit of the 10 ppm level was attributed to an increase of charge trapping in the carrier channel, and the amount of trapped states was experimentally evaluated by the threshold voltage shift induced by the absorbed NH3 molecular analyte. In contrast, a conventional device with a 50-nm-thick pentacene layer displayed much higher mobility but lower response to NH3 gas, arising from the impediment of analyte penetrating into the conductive channel, owing to the thick pentacene film.

  5. Thin-Film Metamaterials called Sculptured Thin Films

    CERN Document Server

    Lakhtakia, Akhlesh

    2010-01-01

    Morphology and performance are conjointed attributes of metamaterials, of which sculptured thin films (STFs) are examples. STFs are assemblies of nanowires that can be fabricated from many different materials, typically via physical vapor deposition onto rotating substrates. The curvilinear--nanowire morphology of STFs is determined by the substrate motions during fabrication. The optical properties, especially, can be tailored by varying the morphology of STFs. In many cases prototype devices have been fabricated for various optical, thermal, chemical, and biological applications.

  6. Room temperature analysis of dielectric function of ZnO-based thin film on fused quartz substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kurniawan, Robi; Sutjahja, Inge M.; Winata, Toto [Department of Physics, Institut Teknologi Bandung, Ganesa 10 Bandung 40132 (Indonesia); Rusydi, Andrivo; Darma, Yudi, E-mail: yudi@fi.itb.ac.id [Department of Physics, Institut Teknologi Bandung, Ganesa 10 Bandung 40132 (Indonesia); Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); NUSNNI-Nanocore, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)

    2015-09-30

    A set of sample consist of pure ZnO and Cu-doped ZnO film were grown on fused-quartz substrates using pulsed laser deposition (PLD) technique. Here, we report room temperature spectroscopic ellipsometry analysis (covering energy range of 0.5 to 6.3 eV) of pure ZnO film and Cu doped ZnO film at 8 in at. %. The thickness of pure ZnO and Cu-doped ZnO film using in this study is about 350 nm. To extract the dielectric function of ZnO thin film, multilayer modeling is performed which takes into account reflections at each interface through Fresnel coefficients. This method based on Drude-Lorentz models that connect with Kramers-Kronig relations. The best fitting of Ψ (amplitude ratio) and Δ (phase difference) taken by SE measurement are obtained reasonably well by mean the universal fitting of three different photon incident angles. The imaginary part of dielectric function (ε{sub 2}) show the broad peak at around 3.3 eV assigned as combination of optical band energy edge with excitonic states. The exitonic states could not be observed clearly in this stage. The evolution of extracted dielectric function is observable by introducing 8% Cu as indicated by decreasing of excitonic intensity. This result indicates the screening of excitonic state. This study will bring us to have a good undestanding for the role of Cu impurities for ZnO thin films.

  7. Activation of CdTe-based thin films with zinc chloride and tetrachlorozincates

    Energy Technology Data Exchange (ETDEWEB)

    Drost, C., E-mail: christian.drost@ctf-solar.com [CTF Solar GmbH, Manfred von Ardenne Ring 20 F, 01099 Dresden (Germany); Siepchen, B.; Krishnakumar, V.; Späth, B.; Kraft, C. [CTF Solar GmbH, Manfred von Ardenne Ring 20 F, 01099 Dresden (Germany); Modes, T.; Zywitzki, O. [Fraunhofer Institute for Electron Beam and Plasma Technology FEP, Winterbergstrasse 28, 01277 Dresden (Germany)

    2015-05-01

    A series of CdTe thin film solar cells were prepared by applying aqueous solutions of ZnCl{sub 2} or tetrachlorozincates M{sub n}ZnCl{sub 4} (M = Na or NH{sub 4} for n = 2; M = Mg or Ca for n = 1) as flux reagents in the activation process, instead of established but highly toxic CdCl{sub 2}. The remaining process steps for the generation of solar cells have not been varied and activation-temperature and -duration were kept constant with 400 °C/25 min. The back contact comprised an etching step followed by deposition of ca. 150 nm gold. In contrast to Na{sub 2}ZnCl{sub 4} and (NH{sub 4}){sub 2}ZnCl{sub 4}, the application of ZnCl{sub 2} or CaZnCl{sub 4} in 30% concentration gave promising results with current-voltage and quantum efficiency cell-data well comparable to CdCl{sub 2} standard activated reference cells. The aqueous solutions were either applied manually by dip-coating or sponge roller procedure. Microstructural and interfacial investigations were performed with high resolution field emission scanning electron microscopy imaging on polished cross sections of ZnCl{sub 2}- or CaZnCl{sub 4}-derived devices using ion beam preparation techniques. Moreover, the measurement of the electron beam induced current was achieved, yielding a similar appearance for a CaZnCl{sub 4}-activated substrate compared to referential CdCl{sub 2} samples. - Highlights: • ZnCl{sub 2} or CaZnCl{sub 4} can substitute toxic CdCl{sub 2} in the activation of CdTe. • Activation process parameters are similar to standard CdCl{sub 2} activation. • Well comparable current-voltage cell data is obtained for Zn-based activation. • Microstructure for Zn-based cells compares well with standard CdCl{sub 2}-cells.

  8. Current-induced surface roughness reduction in conducting thin films

    Science.gov (United States)

    Du, Lin; Maroudas, Dimitrios

    2017-03-01

    Thin film surface roughness is responsible for various materials reliability problems in microelectronics and nanofabrication technologies, which requires the development of surface roughness reduction strategies. Toward this end, we report modeling results that establish the electrical surface treatment of conducting thin films as a physical processing strategy for surface roughness reduction. We develop a continuum model of surface morphological evolution that accounts for the residual stress in the film, surface diffusional anisotropy and film texture, film's wetting of the layer that is deposited on, and surface electromigration. Supported by linear stability theory, self-consistent dynamical simulations based on the model demonstrate that the action over several hours of a sufficiently strong and properly directed electric field on a conducting thin film can reduce its surface roughness and lead to a smooth planar film surface. The modeling predictions are in agreement with experimental measurements on copper thin films deposited on silicon nitride layers.

  9. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Pohl, P.I.; Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States)

    1997-04-01

    Separating light gases using membranes is a technology area for which there exists opportunities for significant energy savings. Examples of industrial needs for gas separation include hydrogen recovery, natural gas purification, and dehydration. A membrane capable of separating H{sub 2} from other gases at high temperatures could recover hydrogen from refinery waste streams, and facilitate catalytic dehydrogenation and the water gas shift (CO + H{sub 2}O {yields} H{sub 2} + CO{sub 2}) reaction. Natural gas purification requires separating CH{sub 4} from mixtures with CO{sub 2}, H{sub 2}S, H{sub 2}O, and higher alkanes. A dehydrating membrane would remove water vapor from gas streams in which water is a byproduct or a contaminant, such as refrigeration systems. Molecular sieve films offer the possibility of performing separations involving hydrogen, natural gas constituents, and water vapor at elevated temperatures with very high separation factors. It is in applications such as these that the authors expect inorganic molecular sieve membranes to compete most effectively with current gas separation technologies. Cryogenic separations are very energy intensive. Polymer membranes do not have the thermal stability appropriate for high temperature hydrogen recovery, and tend to swell in the presence of hydrocarbon natural gas constituents. The authors goal is to develop a family of microporous oxide films that offer permeability and selectivity exceeding those of polymer membranes, allowing gas membranes to compete with cryogenic and adsorption technologies for large-scale gas separation applications.

  10. Flexible fluidic microchips based on thermoformed and locally modified thin polymer films

    NARCIS (Netherlands)

    Truckenmüller, R.; Giselbrecht, S.; Blitterswijk, van C.; Dambrowsky, N.; Gottwald, E.; Mappes, T.; Rolletschek, A.; Saile, V.; Trautmann, C.; Weibezahn, K.-F.; Welle, A.

    2008-01-01

    This paper presents a fundamentally new approach for the manufacturing and the possible applications of lab on a chip devices, mainly in the form of disposable fluidic microchips for life sciences applications. The new technology approach is based on a novel microscale thermoforming of thin polymer

  11. Effect of UV-light illumination on oxide-based electric-double-layer thin-film transistors

    Science.gov (United States)

    Zhou, Jumei; Hu, Yunping

    2017-01-01

    Indium–tin-oxide (ITO)-based thin-film transistors (TFTs) were fabricated using porous SiO2 deposited by plasma-enhanced chemical vapor deposition and Al2O3 deposited by atomic layer deposition as dielectrics. The results showed that the porous SiO2 film exhibited a high electric-double-layer (EDL) capacitance. Devices gated by the EDL dielectric exhibited a high drain current on/off ratio of >106 and a low operation voltage of illuminated by 254 nm UV light, ITO-based EDL TFTs gated by a single SiO2 dielectric displayed weak photo-responses. However, devices gated by a stacked Al2O3/EDL dielectric displayed a high photo responsivity of more than 104 with a gate bias of ‑0.5 V (depletion state).

  12. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  13. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  14. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  15. Gallium nitride based thin films for photon and particle radiation dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Hofstetter, Markus

    2012-07-23

    Ionization chambers have been used since the beginning of the 20th century for measuring ionizing radiation and still represent the ''gold standard'' in dosimetry. However, since the sensitivity of the devices is proportional to the detection volume, ionization chambers are not common in numerous medical applications, such as imaging. In these fields, spatially resolved dose information is, beside film-systems, usually measured with scintillators and photo-multipliers, which is a relatively complex and expensive technique. For thus much effort has been focused on the development of novel detection systems in the last decades and especially in the last few years. Examples include germanium or silicon photoconductive detectors, MOSFETs, and PIN-diodes. Although for these systems, miniaturization for spatially resolved detection is possible, they suffer from a range of disadvantages. Characteristics such as poor measurement stability, material degradation, and/or a limited measurement range prevent routine application of these techniques in medical diagnostic devices. This work presents the development and evaluation of gallium nitride (GaN) thin films and heterostructures to validate their application in x-ray detection in the medical regime. Furthermore, the impact of particle radiation on device response was investigated. Although previous publications revealed relatively low energy absorption of GaN, it is possible to achieve very high signal amplification factors inside the material due to an appropriate sensor configuration, which, in turn, compensates the low energy absorption. Thus, gallium nitride can be used as a photo-conductor with ohmic contacts. The conductive volume of the sensor changes in the presence of external radiation, which results in an amplified measurement signal after applying a bias voltage to the device. Experiments revealed a sensitivity of the device between air kerma rates of 1 {mu}Gy/s and 20 mGy/s. In this range

  16. Numerical simulation of offset-drain amorphous oxide-based thin-film transistors

    Science.gov (United States)

    Jeong, Jaewook

    2016-11-01

    In this study, we analyzed the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with an offset-drain structure by technology computer aided design (TCAD) simulation. When operating in a linear region, an enhancement-type TFT shows poor field-effect mobility because most conduction electrons are trapped in acceptor-like defects in an offset region when the offset length (L off) exceeds 0.5 µm, whereas a depletion-type TFT shows superior field-effect mobility owing to the high free electron density in the offset region compared with the trapped electron density. When operating in the saturation region, both types of TFTs show good field-effect mobility comparable to that of a reference TFT with a large gate overlap. The underlying physics of the depletion and enhancement types of offset-drain TFTs are systematically analyzed.

  17. Microwave detectors based on granular high-T sub c thin films

    Energy Technology Data Exchange (ETDEWEB)

    Konopka, J.; Jung, G.; Kula, W.; Gierlowski, P.; Konopka, A.; Lewandowski, S.J. (Polish Academy of Sciences, Warsaw (Poland)); Sobolewski, R. (Rochester Univ., NY (USA). Dept. of Electrical Engineering)

    1990-02-01

    Detecting and mixing properties of microstrip superconducting Y-Ba-Cu-O and Bi-Ca-Sr-Cu-O thin film structures deposited on various substrates have been investigated. The device performance was tested in 25, 55, and 110 GHz frequency bands at temperatures ranging from 100 K to about 50 K. Sensitivity obtained at 110 GHz was comparable to that of crystalline detectors. The mixing experiments were performed in a 25 GHz frequency band and indicated that the detector response time was less than 40 ps. The intermediate frequency was varied from 50 MHz to 5 GHz without any decrease in the mixer output up to 3 GHz. Auxiliary emission measurements performed at 132 GHz and down to 4.2 K revealed that the detector low-temperature performance limit was associated with microwave radiation from clusters of intergrain weak links arranged in multiloop quantum interferometers.

  18. Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

    Energy Technology Data Exchange (ETDEWEB)

    Aïssa, B., E-mail: aissab@emt.inrs.ca [Qatar Environment and Energy Research Institute (QEERI), Qatar Foundation, P.O. Box 5825, Doha (Qatar); Centre Energie, Matériaux et Télécommunications, INRS, 1650, Boulevard Lionel-Boulet Varennes, Quebec J3X 1S2 (Canada); Nedil, M. [Telebec Wireless Underground Communication Laboratory, UQAT, 675, 1ère Avenue, Val d' Or, Quebec J9P 1Y3 (Canada); Kroeger, J. [NanoIntegris & Raymor Nanotech, Raymor Industries Inc., 3765 La Vérendrye, Boisbriand, Quebec J7H 1R8 (Canada); Haddad, T. [Department of Mechanical Engineering, McGill University, Montreal, Quebec H3A 0B8 (Canada); Rosei, F. [Centre Energie, Matériaux et Télécommunications, INRS, 1650, Boulevard Lionel-Boulet Varennes, Quebec J3X 1S2 (Canada)

    2015-09-28

    We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10{sup 4} and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10{sup 4} s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices.

  19. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    KAUST Repository

    Hanna, Amir

    2015-12-04

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.

  20. Magnetic properties of thin Ni films measured by a dc SQUID-based magnetic microscope

    DEFF Research Database (Denmark)

    Snigirev, O.V.; Andreev, K.E.; Tishin, A.M.;

    1997-01-01

    We have applied a scanning HTS (high-temperature superconductor) de SQUID (superconducting quantum interference device) -based magnetic microscope to study the magnetic properties of Au/Ni/Si(100) films in the thickness range from 8 to 200 Angstrom at T = 77 K. A one-domain structure with in-plan...

  1. Solution-assisted ultrafast transfer of graphene-based thin films for solar cells and humidity sensors

    Science.gov (United States)

    Sun, Jiawei; Xie, Xiao; Bi, Hengchang; Jia, Haiyang; Zhu, Chongyang; Wan, Neng; Huang, Jianqiu; Nie, Meng; Li, Dan; Sun, Litao

    2017-03-01

    Vacuum filtration enables the fabrication of large-area graphene-based membranes (GBMs), possessing a smoother surface than that by spray, spin coating or drop casting. However, due to the strong interaction with substrates, the separation of thin GBMs from the filter is problematic. Conventional stamping separation/transfer of graphene oxide (GO) thin films requires another substrate and pressing for >10 h, which may damage the delicate structure of the transfer substrates. Other methods require GO to be reduced on filters before separation, thus limiting the reduction methods. Inspired by a coagulation bath that enables rapid formation of ultrastrong GO fibers, we present an ultrafast (energy of hydrogen bonds also demonstrates another reason for the successful separation. The film thickness ranges from 45 nm to several micrometers. When used as a composite of counter electrodes in dye sensitized solar cells, it showed higher (8.58%) power conversion efficiency than its spin-(7.71%) and spray-coated (8.07%) counterparts. It also showed promising performance in capacitive humidity sensors. The capacitance varied by three orders of magnitude in the range of the relative humidity of 15%–95%. Therefore the strategy realizes an ultrafast and high-quality film production which is suitable for various applications.

  2. A Novel Thin Film Resistive Humidity Sensor Based on Soluble Conjugated Polymer: (propionic acid)-co-(propargyl alcohol)

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    A novel soluble conjugated copolymer (propionic acid)-co-(propargyl alcohol) (PA-co-OHP) has been synthesized for the first time using a new palladium acetylide catalyst Pd(PPh3)2 (CoCC(CH3)2OH)2 (PPB). Thin film resistive humidity sensor based on the copolymer doped with HClO-4 was prepared. The impedance of the sensor changed from 103~107 W in 95%~30%RH, and the response of that is very quick (<6 sec.). Preliminary results show the copolymer is a promising humidity sensitive material.

  3. A low-power all-optical bistable device based on a liquid crystal layer embedded in thin gold films

    Science.gov (United States)

    Takase, Yuki; Tien Thanh, Pham; Fujimura, Ryushi; Kajikawa, Kotaro

    2014-04-01

    An all-optical bistable (AOB) resonator device composed of a 430-nm-thick liquid crystal (LC) layer embedded in two thin gold films (MLM) is reported in this paper. This device allows the use of the incident illumination at normal incidence, whereas the previous AOB devices based on twisted nematic (TN)-LC function only for illumination at oblique incidence. The fastest switching time was measured to be 1.8 ms, which is significantly faster than that of TN-LC. Because the MLM device operates free from electronic circuits, it is promising for two-dimensional optical data processing, random access optical memories, and spatial light modulators.

  4. Prepolymer-based waveguiding thin films for the holographic recording of dry-developing refractive-index gratings

    Science.gov (United States)

    Driemeier, W.

    1990-04-01

    A new concept is presented for the easy preparation of polymer systems which are characterized by a persistent photoinduced refractive-index change. These organic materials are based upon highly viscous prepolymers, reactive multifunctional thinners and uv-photoinitiators used in very high concentrations of max. 25%. Waveguiding thin films are applied for the optical recording of refractive-index gratings. The index modulation is enhanced by a dry development at 20-50°C up to 1.0×10 -2. A holographically produced grating coupler reaches efficiencies of 33% for an incident HeNe laser beam.

  5. [Development of enzyme biosensor based on trypsin and conductometric thin-film electrodes for protein and artificial substrates determination].

    Science.gov (United States)

    Biloivan, O A; Dziadevich, S V; Soldatkin, O P; Starodub, M F; Iel'ska, G V

    1997-01-01

    Two analytical systems based on the soluble and immobilized trypsin and conductometric thin-film electrodes were developed to measure concentration of artificial substrate and protein in solution. It was shown that these systems allow one to determine concentrations of Ha-benzoyl-L-arginin-ethyl-ester in the range of 0.1-1.0 mM and concentrations of HSA: 0.1-2.0 mg/ml with soluble and 0.1-0.8 mg/ml with immobilized trypsin.

  6. Hybrid AgNP–TiO2 thin film based photoanode for dye sensitized solar cell

    Directory of Open Access Journals (Sweden)

    Jayraj V. Vaghasiya

    2016-09-01

    Full Text Available This article addresses two major issues in the plasmonic dye solar cell; (i protection of plasmonic nanoparticles from electrolyte attack and (ii design of appropriate molecular dye to harvest photon near the plasmonic resonance. This report reveals the synthesis of D-π-A carbazole dye and incorporation of plasmonic Ag nanoparticles (AgNPs into TiO2 film using Ag–TiO2 gel. We have designed and synthesized an efficient D-π-A carbazole dye molecule whose absorption maxima matches the plasmonic resonance of AgNPs leading to augmented near field effect, enhancing photon harvesting property of dye molecule. This article also describes a strategy to incorporate AgNPs into the TiO2 photoelectrode by Ag–TiO2 gel. The plasmonic photoanode was characterized using SEM and optical spectroscopy. Dye solar cells were characterized by J–V characteristics and electrochemical impedance technique in order to take insight into photovoltaic performance and electron transfer kinetic. This engineered DSSC achieves 45% enhancement in current due to the plasmon enhanced near field effect at thin film (3 μm.

  7. Photoconductivity of thin organic films

    Science.gov (United States)

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriälä, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene ( PHT), fullerene ( C60), pyrelene tetracarboxylic diimide ( PTCDI) and copper phthalocyanine ( CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 × 10 3 Ω m and 3 × 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 × 10 8 Ω m in dark to 3.1 × 10 6 Ω m under the light.

  8. Photoconductivity of thin organic films

    Energy Technology Data Exchange (ETDEWEB)

    Tkachenko, Nikolai V. [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Chukharev, Vladimir, E-mail: Vladimir.Chukharev@tut.fi [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Kaplas, Petra; Tolkki, Antti; Efimov, Alexander [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Haring, Kimmo; Viheriaelae, Jukka; Niemi, Tapio [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland); Lemmetyinen, Helge [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland)

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 {mu}m), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C{sub 60}), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C{sub 60} and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 10{sup 3} {Omega} m and 3 x 10{sup 4} {Omega} m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 10{sup 8} {Omega} m in dark to 3.1 x 10{sup 6} {Omega} m under the light.

  9. Synthesis and characterization of three-dimensional transition metal ions doped zinc oxide based dilute magnetic semiconductor thin films

    Science.gov (United States)

    Samanta, Kousik

    Dilute magnetic semiconductors (DMS), especially 3d-transition metal (TM) doped ZnO based DMS materials are the most promising candidates for optoelectronics and spintronics applications; e.g. in spin light emitting diode (SLED), spin transistors, and spin field effect transistors (SFET), etc. In the present dissertation, thin films of Zn1-xTMxO (TM = Co2+, Cu2+, and Mn2+) were grown on (0001) oriented Al2O3 substrates by pulsed laser deposition (PLD) technique. The films were highly c-axis oriented, nearly single crystalline, and defects free for a limited concentration of the dilution of transition metal ions. In particular, we have obtained single crystalline phases of Zn1-xTMxO thin films for up to 10, 3, and 5 stoichiometric percentages of Co2+, Cu2+, and Mn2+ respectively. Raman micro-probe system was used to understand the structural and lattice dynamical properties at different physical conditions. The confinement of optical phonons in the disorder lattice was explained by alloy potential fluctuation (APF) using a spatial correlation (SC) model. The detailed analysis of the optical phonon behavior in disorder lattice confirmed the substitution of the transition metal ions in Zn 2+ site of the ZnO host lattice. The secondary phases of ZnCo 2O4, CuO, and ZnMn2O4 were detected in higher Co, Cu, and Mn doped ZnO thin films respectively; where as, XRD did not detect these secondary phases in the same samples. Room temperature ferromagnetism was observed in Co2+ and Cu2+ ions doped ZnO thin films with maximum saturation magnetization (Ms) of 1.0 and 0.76 muB respectively. The origin of the observed ferromagnetism in Zn1-xCoxO thin films was tested by the controlled introduction of shallow donors (Al) in Zn0.9-x Co0.1O:Alx (x = 0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (1.0 muB /Co) at 300K reduced (˜0.25 muB/Co) due to Al doping. The observed ferromagnetism and the reduction due to Al doping can be explained by the Bound

  10. Selective epitaxial growth for YBCO thin films

    NARCIS (Netherlands)

    Damen, C.A.J.; Smilde, H.-J.H.; Blank, D.H.A.; Rogalla, H.

    1998-01-01

    A novel selective epitaxial growth (SEG) technique for (YBCO) thin films is presented. The method involves the deposition of a thin (about 10 nm) metal layer, in the desired pattern, on a substrate before the deposition of the superconducting thin film. During growth the metal reacts with the YBCO,

  11. Early stage phase separation in pharmaceutical solid dispersion thin films under high humidity: improved spatial understanding using probe-based thermal and spectroscopic nanocharacterization methods.

    Science.gov (United States)

    Qi, Sheng; Moffat, Jonathan G; Yang, Ziyi

    2013-03-04

    Phase separation in pharmaceutical solid dispersion thin films under high humidity is still poorly understood on the submicrometer scale. This study investigated the phase separation of a model solid dispersion thin film, felodipine-PVP K29/32, prepared by spin-coating and analyzed using probe-based methods including atomic force microscopy, nanothermal analysis, and photothermal infrared microspectroscopy. The combined use of these techniques revealed that the phase separation process occurring in the thin films under high humidity is different from that in dry conditions reported previously. The initial stage of phase separation is primarily initiated in the bulk of the films as amorphous drug domains. Drug migration toward the surface of the solid dispersion film was then observed to occur under exposure to increased humidity. PVP cannot prevent phase separation of felodipine under high humidity but can minimize the crystallization of amorphous felodipine domains in the solid dispersion thin films. This study demonstrates the unique abilities of these nanocharacterization methods for studying, in three dimensions, the phase separation of thin films for pharmaceutical applications.

  12. SU-8 as Hydrophobic and Dielectric Thin Film in Electrowetting-on-Dielectric Based Microfluidics Device

    OpenAIRE

    Vijay Kumar; N. N. Sharma

    2012-01-01

    Electrowetting-on-dielectric (EWOD) based droplet actuation in microfluidic chip is designed and fabricated. EWOD is used as on-chip micro-pumping scheme for moving fluid digitally in Lab-on-a-chip devices. For enabling this scheme, stacked deposition of thin dielectric and hydrophobic layer in that order between microchannel and electrodes is done. The present paper investigates the potential use of SU-8 as hydrophobic layer in conjunction of acting as dielectric in the device. The objective...

  13. Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Polster, S. [Chair of Electron Devices, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Cauerstrasse 6, 91058 Erlangen (Germany); Jank, M. P. M. [Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany); Frey, L. [Chair of Electron Devices, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Cauerstrasse 6, 91058 Erlangen (Germany); Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany)

    2016-01-14

    The correlation of defect content and film morphology with the charge-carrier transport in field-effect devices based on zinc oxide nanoparticles was investigated. Changes in the defect content and the morphology were realized by annealing and sintering of the nanoparticle thin films. Temperature-dependent electrical measurements reveal that the carrier transport is thermally activated for both the unsintered and sintered thin films. Reduced energetic barrier heights between the particles have been determined after sintering. Additionally, the energetic barrier heights between the particles can be reduced by increasing the drain-to-source voltage and the gate-to-source voltage. The changes in the barrier height are discussed with respect to information obtained by scanning electron microscopy and photoluminescence measurements. It is found that a reduction of surface states and a lower roughness at the interface between the particle layer and the gate dielectric lead to lower barrier heights. Both surface termination and layer morphology at the interface affect the barrier height and thus are the main criteria for mobility improvement and device optimization.

  14. AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

    Science.gov (United States)

    Wang, W. B.; Fu, Y. Q.; Chen, J. J.; Xuan, W. P.; Chen, J. K.; Wang, X. Z.; Mayrhofer, P.; Duan, P. F.; Bittner, A.; Schmid, U.; Luo, J. K.

    2016-07-01

    This paper reports the characterization of scandium aluminum nitride (Al1-x Sc x N, x  =  27%) films and discusses surface acoustic wave (SAW) devices based on them. Both AlScN and AlN films were deposited on silicon by sputtering and possessed columnar microstructures with (0 0 0 2) crystal orientation. The AlScN/Si SAW devices showed improved electromechanical coupling coefficients (K 2, ~2%) compared with pure AlN films (droplets, and the acoustic streaming and pumping velocities were 2  ×  and 3  ×  those of the AlN/Si SAW devices, respectively. Mechanical characterization showed that the Young’s modulus and hardness of the AlN film decreased significantly when Sc was doped, and this was responsible for the decreased acoustic velocity and resonant frequency, and the increased temperature coefficient of frequency, of the AlScN SAW devices.

  15. Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production

    Directory of Open Access Journals (Sweden)

    F. Urbain

    2014-01-01

    Full Text Available Hydrogenated amorphous silicon thin film tandem solar cells (a-Si:H/a-Si:H have been developed with focus on high open-circuit voltages for the direct application as photocathodes in photoelectrochemical water splitting devices. By temperature variation during deposition of the intrinsic a-Si:H absorber layers the band gap energy of a-Si:H absorber layers, correlating with the hydrogen content of the material, can be adjusted and combined in a way that a-Si:H/a-Si:H tandem solar cells provide open-circuit voltages up to 1.87 V. The applicability of the tandem solar cells as photocathodes was investigated in a photoelectrochemical cell (PEC measurement set-up. With platinum as a catalyst, the a-Si:H/a-Si:H based photocathodes exhibit a high photocurrent onset potential of 1.76 V versus the reversible hydrogen electrode (RHE and a photocurrent of 5.3 mA/cm2 at 0 V versus RHE (under halogen lamp illumination. Our results provide evidence that a direct application of thin film silicon based photocathodes fulfills the main thermodynamic requirements to generate hydrogen. Furthermore, the presented approach may provide an efficient and low-cost route to solar hydrogen production.

  16. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yurchuk, Ekaterina

    2015-02-06

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  17. A comparative study on the performance of Kesterite based thin film solar cells using SCAPS simulation program

    Science.gov (United States)

    Simya, O. K.; Mahaboobbatcha, A.; Balachander, K.

    2015-06-01

    A comparative study of thin film solar cells based on CZTS, CZTSe, and CZTSSe (Copper Zinc Tin Sulphur Selenium) absorbers layers were simulated with Cadmium Sulphide (CdS) as buffer layer and Zinc Oxide (ZnO) as window layer using a solar cell capacitance simulator (SCAPS). The influences of series resistance, band to band recombination, defects and interfaces, thickness of (CZTS|CZTSe|CZTSSe) absorber layer, (CdS) buffer layer and transparent conductive oxide layer (ZnO) on the photovoltaic cell parameters were studied in detail. Improvements in efficiency were achieved by changing the back contact metal work function (BMWF) and choosing the flat band option in SCAPS software. Based on the best possible optimisation, an efficiency (η) of 12.03%, 13.16% and 15.77% were obtained for CZTS, CZTSe, and CZTSSe respectively. The performance of thin film photovoltaic devices (TFPV), for Mo back contact before optimisation and the SCAPS simulated values (flat band) after optimisation were described in detail to have in-depth understanding for better design of experiments (DOE) to obtain high efficiency solar cells.

  18. Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration

    Directory of Open Access Journals (Sweden)

    Yi Li

    2014-06-01

    Full Text Available This study investigates the remarkable reduction in the threshold voltage (VT of pentacene-based thin film transistors with pentacene/copper phthalocyanine (CuPc sandwich configuration. This reduction is accompanied by increased mobility and lowered sub-threshold slope (S. Sandwich devices coated with a 5 nm layer of CuPc layer are compared with conventional top-contact devices, and results indicate that VT decreased significantly from −20.4 V to −0.2 V, that mobility increased from 0.18 cm2/Vs to 0.51 cm2/Vs, and that S was reduced from 4.1 V/dec to 2.9 V/dec. However, the on/off current ratio remains at 105. This enhanced performance could be attributed to the reduction in charge trap density by the incorporated CuPc layer. Results suggest that this method is simple and effectively generates pentacene-based organic thin film transistors with high mobility and low VT.

  19. Thermoviscoelastic models for polyethylene thin films

    DEFF Research Database (Denmark)

    Li, Jun; Kwok, Kawai; Pellegrino, Sergio

    2016-01-01

    This paper presents a constitutive thermoviscoelastic model for thin films of linear low-density polyethylene subject to strains up to yielding. The model is based on the free volume theory of nonlinear thermoviscoelasticity, extended to orthotropic membranes. An ingredient of the present approach...... is that the experimentally inaccessible out-of-plane material properties are determined by fitting the model predictions to the measured nonlinear behavior of the film. Creep tests, uniaxial tension tests, and biaxial bubble tests are used to determine the material parameters. The model has been validated experimentally...

  20. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  1. Polycrystalline thin film materials and devices

    Energy Technology Data Exchange (ETDEWEB)

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  2. Thin film fuel cell electrodes.

    Science.gov (United States)

    Asher, W. J.; Batzold, J. S.

    1972-01-01

    Earlier work shows that fuel cell electrodes prepared by sputtering thin films of platinum on porous vycor substrates avoid diffusion limitations even at high current densities. The presented study shows that the specific activity of sputtered platinum is not unusually high. Performance limitations are found to be controlled by physical processes, even at low loadings. Catalyst activity is strongly influenced by platinum sputtering parameters, which seemingly change the surface area of the catalyst layer. The use of porous nickel as a substrate shows that pore size of the substrate is an important parameter. It is noted that electrode performance increases with increasing loading for catalyst layers up to two microns thick, thus showing the physical properties of the sputtered layer to be different from platinum foil. Electrode performance is also sensitive to changing differential pressure across the electrode. The application of sputtered catalyst layers to fuel cell matrices for the purpose of obtaining thin total cells appears feasible.

  3. Nanotwin hardening in a cubic chromium oxide thin film

    Directory of Open Access Journals (Sweden)

    Kazuma Suzuki

    2015-09-01

    Full Text Available NaCl-type (B1 chromium oxide (CrO has been expected to have a high hardness value and does not exist as an equilibrium phase. We report a B1-based Cr0.67O thin film with a thickness of 144 nm prepared by pulsed laser deposition as an epitaxial thin film on a MgO single crystal. The thin film contained a number of stacking faults and had a nanotwinned structure composed of B1 with disordered vacancies and corundum structures. The Cr0.67O thin film had a high indentation hardness value of 44 GPa, making it the hardest oxide thin film reported to date.

  4. Fundamentals of photoelectric effects in molecular electronic thin film devices: applications to bacteriorhodopsin-based devices.

    Science.gov (United States)

    Hong, F T

    1995-01-01

    This tutorial lecture focuses on the fundamental mechanistic aspects of light-induced charge movements in pigment-containing membranes. The topic is relevant to molecular electronics because many prototypes optoelectronic devices are configured as pigment-containing thin films. We use reconstituted bacteriorhodopsin membranes as an example to illustrate the underlying principle of measurements and data interpretation. Bacteriorhodopsin, a light-driven proton pump, is the only protein component in the purple membrane of Halobacterium halobium. It resembles the visual pigment rhodopsin chemically but performs the function of photosynthesis. Bacteriorhodopsin thus offers an unprecedented opportunity for us to compare the visual photoreceptor and the photosynthetic apparatus from a mechanistic point of view. Bacteriorhodopsin, well known for its exceptional chemical and mechanical stability, is also a popular advanced biomaterial for molecular device construction. The tutorial approaches the subject from two angles. First, the fundamental photoelectric properties are exploited for device construction. Second, basic design principles for photosensors and photon energy converters can be elucidated via 'reverse engineering'. The concept of molecular intelligence and the principle of biomimetic science are discussed.

  5. Optimization-based design of surface textures for thin-film Si solar cells.

    Science.gov (United States)

    Sheng, Xing; Johnson, Steven G; Michel, Jurgen; Kimerling, Lionel C

    2011-07-04

    We numerically investigate the light-absorption behavior of thin-film silicon for normal-incident light, using surface textures to enhance absorption. We consider a variety of texture designs, such as simple periodic gratings and commercial random textures, and examine arbitrary irregular periodic textures designed by multi-parameter optimization. Deep and high-index-contrast textures exhibit strong anisotropic scattering that is outside the regime of validity of the Lambertian models commonly used to describe texture-induced absorption enhancement for normal incidence. Over a 900-1100 nm wavelength range, our optimized surface texture in two dimensions (2D) enhances absorption by a factor of 2.7 πn, considerably larger than the original πn Lambertian result and exceeding by almost 50% a recent generalization of Lambertian model for periodic structures in finite spectral range. However, the πn Lambertian limit still applies for isotropic incident light, and our structure obeys this limit when averaged over all the angles. Therefore, our design can be thought of optimizing the angle/enhancement tradeoff for periodic textures.

  6. Wireless thin film transistor based on micro magnetic induction coupling antenna

    Science.gov (United States)

    Jun, Byoung Ok; Lee, Gwang Jun; Kang, Jong Gu; Kim, Seunguk; Choi, Ji-Woong; Cha, Seung Nam; Sohn, Jung Inn; Jang, Jae Eun

    2015-12-01

    A wireless thin film transistor (TFT) structure in which a source/drain or a gate is connected directly to a micro antenna to receive or transmit signals or power can be an important building block, acting as an electrical switch, a rectifier or an amplifier, for various electronics as well as microelectronics, since it allows simple connection with other devices, unlike conventional wire connections. An amorphous indium gallium zinc oxide (α-IGZO) TFT with magnetic antenna structure was fabricated and studied for this purpose. To enhance the induction coupling efficiency while maintaining the same small antenna size, a magnetic core structure consisting of Ni and nanowires was formed under the antenna. With the micro-antenna connected to a source/drain or a gate of the TFT, working electrical signals were well controlled. The results demonstrated the device as an alternative solution to existing wire connections which cause a number of problems in various fields such as flexible/wearable devices, body implanted devices, micro/nano robots, and sensors for the ‘internet of things’ (IoT).

  7. Fast Adaptive Thermal Camouflage Based on Flexible VO₂/Graphene/CNT Thin Films.

    Science.gov (United States)

    Xiao, Lin; Ma, He; Liu, Junku; Zhao, Wei; Jia, Yi; Zhao, Qiang; Liu, Kai; Wu, Yang; Wei, Yang; Fan, Shoushan; Jiang, Kaili

    2015-12-09

    Adaptive camouflage in thermal imaging, a form of cloaking technology capable of blending naturally into the surrounding environment, has been a great challenge in the past decades. Emissivity engineering for thermal camouflage is regarded as a more promising way compared to merely temperature controlling that has to dissipate a large amount of excessive heat. However, practical devices with an active modulation of emissivity have yet to be well explored. In this letter we demonstrate an active cloaking device capable of efficient thermal radiance control, which consists of a vanadium dioxide (VO2) layer, with a negative differential thermal emissivity, coated on a graphene/carbon nanotube (CNT) thin film. A slight joule heating drastically changes the emissivity of the device, achieving rapid switchable thermal camouflage with a low power consumption and excellent reliability. It is believed that this device will find wide applications not only in artificial systems for infrared camouflage or cloaking but also in energy-saving smart windows and thermo-optical modulators.

  8. Cathodoluminescence degradation of PLD thin films

    Science.gov (United States)

    Swart, H. C.; Coetsee, E.; Terblans, J. J.; Ntwaeaborwa, O. M.; Nsimama, P. D.; Dejene, F. B.; Dolo, J. J.

    2010-12-01

    The cathodoluminescence (CL) intensities of Y2SiO5:Ce3+, Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+ phosphor thin films that were grown by pulsed laser deposition (PLD) were investigated for possible application in low voltage field emission displays (FEDs) and other infrastructure applications. Several process parameters (background gas, laser fluence, base pressure, substrate temperature, etc.) were changed during the deposition of the thin films. Atomic force microscopy (AFM) was used to determine the surface roughness and particle size of the different films. The layers consist of agglomerated nanoparticle structures. Samples with good light emission were selected for the electron degradation studies. Auger electron spectroscopy (AES) and CL spectroscopy were used to monitor changes in the surface chemical composition and luminous efficiency of the thin films. AES and CL spectroscopy were done with 2 keV energy electrons. Measurements were done at 1×10-6 Torr oxygen pressure. The formation of different oxide layers during electron bombardment was confirmed with X-ray photoelectron spectroscopy (XPS). New non-luminescent layers that formed during electron bombardment were responsible for the degradation in light intensity. The adventitious C was removed from the surface in all three cases as volatile gas species, which is consistent with the electron stimulated surface chemical reaction (ESSCR) model. For Y2SiO5:Ce3+ a luminescent SiO2 layer formed during the electron bombardment. Gd2O3 and SrO thin films formed on the surfaces of Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+, respectively, due to ESSCRs.

  9. Incorporation of Cu in Cu(In,Ga)Se{sub 2}-based thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Yong-Duck; Cho, Dae-Hyung; Han, Won-Seok; Park, Nae-Man; Lee, Kyu-Seok; Kim, Je-Ha [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of)

    2010-12-15

    We have fabricated Cu(In,Ga)Se{sub 2} (CIGS)-based thin-film solar cells by using a cluster-type deposition system. The system is composed of a DC sputter for the Mo back electrode, a co-evaporator for the CIGS absorption layer, and a RF sputter for the ZnO and the transparent-conductive-oxide (TCO) window layers. The deposition of the CdS buffer layer was performed separately. Two solar cells with an effective area of 0.47 cm{sup 2} were fabricated using different processes. One cell, which was prepared with a 1-step process, had a larger atomic concentration of In-Ga than of Cu in the absorption layer and showed a conversion efficiency of 11.1%. The other prepared with a 3-step process had nearly the same In-Ga and Cu concentrations and showed a conversion efficiency of 15.5%. We discuss the incorporation of Cu in the two types of thin-film solar cells.

  10. Cd-free heterojunctions in chalcopyrite based thin film solar cells; Cd-freie Heterokontakte in Chalkopyrit-basierten Duennschichtsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Kieven, David

    2012-02-06

    This thesis took care of the problem to replace the buffer layers Cds and i-ZnO in thin-film solar cells of the layer system p-Cu(In,Ga)(Se,S){sub 2}/CdS/i-ZnO/n{sup +} by a Cd-free buffer layer. The synthesis of the material layers. The synthesis was carried out by the method of cathode sputtering established in the deposition of the n{sup +}-ZnO window layer. Aim was to modify the electronic properties of the studied materials either by the choice of the applied bonding elements or by the choice of the composition in such a way that the basic conditions for buffer layers are fulfilled: Optical transparency and suited band fitting to the absorber material. The analysis of the interfaces between the potential buffer materials and the Cu(In,Ga)(Se,S){sub 2} absorber material considering the conduction-band fitting important for solar cells formed a main topic. Finally suited materials came into application as buffer layers in Cu(In,Ga)(Se,S){sub 2}-based thin-film solar cells. Thereby was of interest, whether efficient solar cells can be fabricated, and whether the photovoltaic parameters open-circuit voltage and short-circuit current density are dominantly influenced by possible interface defects, as they are especially discussed in connection with the sputtering deposition.

  11. High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

    KAUST Repository

    Lin, Yen-Hung

    2015-05-26

    High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

  12. A Micro Oxygen Sensor Based on a Nano Sol-Gel TiO2 Thin Film

    Directory of Open Access Journals (Sweden)

    Hairong Wang

    2014-09-01

    Full Text Available An oxygen gas microsensor based on nanostructured sol-gel TiO2 thin films with a buried Pd layer was developed on a silicon substrate. The nanostructured titania thin films for O2 sensors were prepared by the sol-gel process and became anatase after heat treatment. A sandwich TiO2 square board with an area of 350 μm × 350 μm was defined by both wet etching and dry etching processes and the wet one was applied in the final process due to its advantages of easy control for the final structure. A pair of 150 nm Pt micro interdigitated electrodes with 50 nm Ti buffer layer was fabricated on the board by a lift-off process. The sensor chip was tested in a furnace with changing the O2 concentration from 1.0% to 20% by monitoring its electrical resistance. Results showed that after several testing cycles the sensor’s output becomes stable, and its sensitivity is 0.054 with deviation 2.65 × 10−4 and hysteresis is 8.5%. Due to its simple fabrication process, the sensor has potential for application in environmental monitoring, where lower power consumption and small size are required.

  13. Spontaneous wrinkling in azlactone-based functional polymer thin films in 2D and 3D geometries for guided nanopatterning

    Energy Technology Data Exchange (ETDEWEB)

    Ramanathan, Muruganathan; Lokitz, Bradley S.; Messman, Jamie M.; Stafford, Christopher M.; Kilbey II, S. Michael

    2013-01-01

    We report a simple, one step process for developing wrinkling patterns in azlactone-based polymer thin films and brushes in 2D and 3D surfaces. The polymer used in this work wrinkles spontaneously upon deposition and solidification on a substrate without applying any external strain to the substrate, with the mode of deposition defining the direction of the wrinkles. Wrinkle formation is shown to occur on a variety of substrates over large areas. We also find that a very thin brush-like layer of an azlactone-containing block copolymer also exhibits wrinkled topology. Given the spontaneity and versatility of wrinkle formation, we further demonstrate two proofs-of-concept, i) that these periodic wrinkled structures are not limited to planar surfaces, but are also developed in complex geometries including tubes, cones and other 3D structures; and ii) that this one-step wrinkling process can be used to guide the deposition of metal nanoparticles and quantum dots, creating a periodic, nanopatterned film.

  14. Linear and nonlinear optical properties of new Se-based quaternary Se-Sn-(Bi,Te) chalcogenide thin films

    Science.gov (United States)

    Yadav, Preeti; Sharma, Ambika

    2015-02-01

    We are reporting the linear and nonlinear optical properties of Se-based quaternary chalcogenide Se-Sn-(Bi,Te) thin films. Thin films of bulk chalcogenide glasses, prepared by melt quenching method are deposited on glass substrate using thermal evaporation technique. The optical behavior of studied chalcogenide glass systems is investigated using transmission spectra in the spectral range of 400-2500 nm. The glasses exhibit considerable optical nonlinearities which are estimated using linear optical parameters. Linear refractive index has been calculated using well-known Swanepoel method. Wemple-DiDomenico (WDD) parameters are also reported for the investigated glasses. Optical band gap is determined using Tauc extrapolation method and is observed to increase with Sn content. The formulation proposed by Fournier and Snitzer is used to determine the nonlinear behavior of the refractive index. It is observed that n2 increases linearly with increasing n. The values of n2 are compared with pure silica and the results are 100-600 orders higher. The third-order susceptibility χ(3) is also reported in this paper. Two-photon absorption coefficient β2 is determined using optical band gap data. A strong dependence of β2 and n2 is observed on normalized photon energy (?) for a fixed excitation wavelength (1064 nm).

  15. A micro oxygen sensor based on a nano sol-gel TiO2 thin film.

    Science.gov (United States)

    Wang, Hairong; Chen, Lei; Wang, Jiaxin; Sun, Quantao; Zhao, Yulong

    2014-09-03

    An oxygen gas microsensor based on nanostructured sol-gel TiO2 thin films with a buried Pd layer was developed on a silicon substrate. The nanostructured titania thin films for O2 sensors were prepared by the sol-gel process and became anatase after heat treatment. A sandwich TiO2 square board with an area of 350 μm × 350 μm was defined by both wet etching and dry etching processes and the wet one was applied in the final process due to its advantages of easy control for the final structure. A pair of 150 nm Pt micro interdigitated electrodes with 50 nm Ti buffer layer was fabricated on the board by a lift-off process. The sensor chip was tested in a furnace with changing the O2 concentration from 1.0% to 20% by monitoring its electrical resistance. Results showed that after several testing cycles the sensor's output becomes stable, and its sensitivity is 0.054 with deviation 2.65 × 10(-4) and hysteresis is 8.5%. Due to its simple fabrication process, the sensor has potential for application in environmental monitoring, where lower power consumption and small size are required.

  16. A versatile platform for magnetostriction measurements in thin films

    Science.gov (United States)

    Pernpeintner, M.; Holländer, R. B.; Seitner, M. J.; Weig, E. M.; Gross, R.; Goennenwein, S. T. B.; Huebl, H.

    2016-03-01

    We present a versatile nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetoelastic stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e.g., by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. In a proof-of-principle experiment, we determine the magnetostriction constants of a 10 nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique aims, in particular, for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by, e.g., electron beam deposition, thermal evaporation, or sputtering.

  17. An overview of thin film nitinol endovascular devices.

    Science.gov (United States)

    Shayan, Mahdis; Chun, Youngjae

    2015-07-01

    Thin film nitinol has unique mechanical properties (e.g., superelasticity), excellent biocompatibility, and ultra-smooth surface, as well as shape memory behavior. All these features along with its low-profile physical dimension (i.e., a few micrometers thick) make this material an ideal candidate in developing low-profile medical devices (e.g., endovascular devices). Thin film nitinol-based devices can be collapsed and inserted in remarkably smaller diameter catheters for a wide range of catheter-based procedures; therefore, it can be easily delivered through highly tortuous or narrow vascular system. A high-quality thin film nitinol can be fabricated by vacuum sputter deposition technique. Micromachining techniques were used to create micro patterns on the thin film nitinol to provide fenestrations for nutrition and oxygen transport and to increase the device's flexibility for the devices used as thin film nitinol covered stent. In addition, a new surface treatment method has been developed for improving the hemocompatibility of thin film nitinol when it is used as a graft material in endovascular devices. Both in vitro and in vivo test data demonstrated a superior hemocompatibility of the thin film nitinol when compared with commercially available endovascular graft materials such as ePTFE or Dacron polyester. Promising features like these have motivated the development of thin film nitinol as a novel biomaterial for creating endovascular devices such as stent grafts, neurovascular flow diverters, and heart valves. This review focuses on thin film nitinol fabrication processes, mechanical and biological properties of the material, as well as current and potential thin film nitinol medical applications.

  18. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  19. ENERGY EFFICIENCY OF A PHOTOVOLTAIC CELL BASED THIN FILMS CZTS BY SCAPS

    OpenAIRE

    C. Mebarkiaa; D. Dib; H. Zerfaoui; R. Belghit

    2016-01-01

    In the overall context of the diversification of the use of natural resources, the use of renewable energy including solar photovoltaic has become increasingly indispensable. As such, the development of a new generation of photovoltaic cells based on CuZnSnS4 (CZTS) looks promising. Cu2ZnSnS4 (CZTS) is a new film absorber, with good physical properties (band gap energy 1.4-1.6 eV [01] with a large absorption coefficient over 104 cm-1). Indeed, the performance of these cells exceeded 30% in re...

  20. Multiferroic oxide thin films and heterostructures

    Science.gov (United States)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom

    2015-06-01

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  1. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  2. Thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  3. Facile encapsulation of oxide based thin film transistors by atomic layer deposition based on ozone.

    Science.gov (United States)

    Fakhri, Morteza; Babin, Nikolai; Behrendt, Andreas; Jakob, Timo; Görrn, Patrick; Riedl, Thomas

    2013-05-28

    A simplified encapsulation strategy for metal-oxide based TFTs, using ozone instead of water as an oxygen source in a low-temperature ALD process is demonstrated. Thereby, the threshold voltage remains unaltered and the hysteresis is permanently reduced. Costly energy- and time-consuming post-treatment processes can be avoided. This concept is widely applicable to various encapsulation materials (e.g., Al2 O3 , TiO2 , ZrO2 ) and metal-oxide channel semiconductors (e.g., zinc-tin-oxide (ZTO), indium-gallium-zinc-oxide (IGZO)).

  4. Ellipsometric Studies on Silver Telluride Thin Films

    Directory of Open Access Journals (Sweden)

    M. Pandiaraman

    2011-01-01

    Full Text Available Silver telluride thin films of thickness between 45 nm and 145 nm were thermally evaporated on well cleaned glass substrates at high vacuum better than 10 – 5 mbar. Silver telluride thin films are polycrystalline with monoclinic structure was confirmed by X-ray diffractogram studies. AFM and SEM images of these films are also recorded. The phase ratio and amplitude ratio of these films were recorded in the wavelength range between 300 nm and 700 nm using spectroscopic ellipsometry and analysed to determine its optical band gap, refractive index, extinction coefficient, and dielectric functions. High absorption coefficient determined from the analysis of recorded spectra indicates the presence of direct band transition. The optical band gap of silver telluride thin films is thickness dependent and proportional to square of reciprocal of thickness. The dependence of optical band gap of silver telluride thin films on film thickness has been explained through quantum size effect.

  5. SU-8 as Hydrophobic and Dielectric Thin Film in Electrowetting-on-Dielectric Based Microfluidics Device

    Directory of Open Access Journals (Sweden)

    Vijay Kumar

    2012-01-01

    Full Text Available Electrowetting-on-dielectric (EWOD based droplet actuation in microfluidic chip is designed and fabricated. EWOD is used as on-chip micro-pumping scheme for moving fluid digitally in Lab-on-a-chip devices. For enabling this scheme, stacked deposition of thin dielectric and hydrophobic layer in that order between microchannel and electrodes is done. The present paper investigates the potential use of SU-8 as hydrophobic layer in conjunction of acting as dielectric in the device. The objective for the investigation is to lower the cost and a thin simplification in fabrication process of EWOD-based devices. We have done design and optimization of dimensions of electrode array including gap between arrays for EWOD micropump. Design and optimization are carried out in CoventorWare. The designing is followed by fabrication of device and analysis for droplet motion. The fabrication of the device includes array of electrodes over the silicon surface and embedding them in hydrophobic SU-8 layer. Water droplet movement in the order of microliter of spherical shape is demonstrated. It has been shown that an SU-8 microchannel in the current design allows microfluidic flow at tens of voltages comparable with costlier and more complicated to fabricate designs reported in the literature.

  6. The influence of nitrogen and oxygen additions on the thermal characteristics of aluminium-based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Borges, J., E-mail: joelborges@fisica.uminho.pt [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, Prague 6 (Czech Republic); Macedo, F. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Couto, F.M. [Physics Sciences Laboratory, Norte Fluminense State University, 28013-602 Campos–RJ (Brazil); Rodrigues, M.S.; Lopes, C. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); Pedrosa, P. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Universidade do Porto, Faculdade de Engenharia, Departamento de Engenharia Metalúrgica e de Materiais, Rua Dr. Roberto Frias, s/n, 4200-465 Porto (Portugal); Polcar, T. [Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, Prague 6 (Czech Republic); Engineering Materials & nCATS, FEE, University of Southampton, Highfield Campus, SO17 1BJ, Southampton (United Kingdom); Marques, L.; Vaz, F. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2015-08-01

    The ternary aluminium oxynitride (AlN{sub x}O{sub y}) system offers the possibility to obtain a wide range of properties by tailoring the ratio between pure Al, AlN{sub x} and AlO{sub y} and therefore opening a significant number of possible applications. In this work the thermal behaviour of AlN{sub x}O{sub y} thin films was analysed by modulated infrared radiometry (MIRR), taking as reference the binary AlO{sub y} and AlN{sub x} systems. MIRR is a non-contact and non-destructive thermal wave measurement technique based on the excitation, propagation and detection of temperature oscillations of very small amplitudes. The intended change of the partial pressure of the reactive gas (N{sub 2} and/or O{sub 2}) influenced the target condition and hence the deposition characteristics which, altogether, affected the composition and microstructure of the films. Based on the MIRR measurements and their qualitative and quantitative interpretation, some correlations between the thermal transport properties of the films and their chemical/physical properties have been found. Furthermore, the potential of such technique applied in this oxynitride system, which present a wide range of different physical responses, is also discussed. The experimental results obtained are consistent with those reported in previous works and show a high potential to fulfil the demands needed for the possible applications of the systems studied. They are clearly indicative of an adequate thermal response if this particular thin film system is aimed to be applied in small sensor devices or in electrodes for biosignal acquisition, such as those for electroencephalography or electromyography as it is the case of the main research area that is being developed in the group. - Highlights: • AlN{sub x}, AlO{sub y} and AlN{sub x}O{sub y} films were deposited by magnetron sputtering. • Discharge characteristics were compared between systems. • Different x and y coefficients were obtained.

  7. Non-destructive elemental quantification of polymer-embedded thin films using laboratory based X-ray techniques

    Energy Technology Data Exchange (ETDEWEB)

    Cordes, Nikolaus L., E-mail: ncordes@lanl.gov [Materials Science and Technology Division, Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545 (United States); Havrilla, George J. [Chemistry Division, Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545 (United States); Usov, Igor O.; Obrey, Kimberly A.; Patterson, Brian M. [Materials Science and Technology Division, Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545 (United States)

    2014-11-01

    Thin coatings are important for a variety of industries including energy (e.g., solar cells, batteries), consumer electronics (e.g., LCD displays, computer chips), and medical devices (e.g., implants). These coatings are typically highly uniform layers with thicknesses ranging from a monolayer up to several micrometers. Characterizing these highly uniform coatings for their thickness, elemental composition, and uniformity are all paramount, but obtaining these measurements can be more difficult when the layers are subsurface and must be interrogated non-destructively. The coupling of confocal micro-X-ray fluorescence (confocal MXRF) and nano-scale X-ray computed tomography (nano-CT) together can make these measurements while meeting these sensitivity and resolution specifications necessary for characterizing thin films. Elemental composition, atomic percent, placement, and uniformity can be measured in three dimensions with this integrated approach. Confocal MXRF uses a pair of polycapillary optics to focus and collect X-rays from a material from a 3D spatially restricted confocal volume. Because of the spatial definition, individual layers (of differing composition) can be characterized based upon the elementally characteristic X-ray fluorescence collected for each element. Nano-scale X-ray computed tomography, in comparison, can image the layers at very high resolution (down to 50 nm) to precisely measure the embedded layer thickness. These two techniques must be used together if both the thickness and atomic density of a layer are unknown. This manuscript will demonstrate that it is possible to measure both the atomic percent of an embedded thin film layer and confirm its manufacturing quality. As a proof of principle, a 1.5 atomic percent, 2 μm-thick Ge layer embedded within polymer capsules, used for laser plasma experiments at the Omega Laser Facility and National Ignition Facility, are measured. - Highlights: • Coupling of confocal X-ray fluorescence

  8. Approaches Towards the Minimisation of Toxicity in Chemical Solution Deposition Processes of Lead-Based Ferroelectric Thin Films

    Science.gov (United States)

    Bretos, Iñigo; Calzada, M. Lourdes

    The ever-growing environmental awareness in our lives has also been extended to the electroceramics field during the past decades. Despite the strong regulations that have come up (RoHS directive), a number of scientists work on ferroelectric thin film ceramics containing lead. Although the use of these materials in piezoelectric devices is exempt from the RoHS directive, successful ways of decreasing toxic load must be considered a crucial challenge. Within this framework, a few significant advances are presented here, based on different Chemical Solution Deposition strategies. Firstly, the UV sol-gel photoannealing technique (Photochemical Solution Deposition) avoids the volatilisation of hazardous lead from lead-based ferroelectric films, usually observed at conventional annealing temperatures. The key point of this approach lies in the photo-excitation of a few organic components in the gel film. There is also a subsequent annealing of the photo-activated film at temperatures low enough to prevent lead volatilisation, but allowing crystallisation of the pure perovskite phase. Ozonolysis of the films is also promoted when UV-irradiation is carried out in an oxygen atmosphere. This is known to improve electrical response. By this method, nominally stoichiometric solution (i.e., a solution without PbO-excess) derived films with reliable properties, and free of compositional gradients, may be prepared at temperatures as low as 450°C. A PtxPb interlayer between the ferroelectric film and the Pt silicon substrate is observed in the heterostructure of the low-temperature processed films. This is when lead excesses are present in their microstructure. The influence of this interface on the compositional depth profile of the films will be discussed. We will evaluate the feasibility of the UV sol-gel photoannealing technique in fabricating functional films while fulfilling environmental and technological aspects (like integration with silicon IC technology). The second

  9. Free standing diamond-like carbon thin films by PLD for laser based electrons/protons acceleration

    Energy Technology Data Exchange (ETDEWEB)

    Thema, F.T.; Beukes, P.; Ngom, B.D. [UNESCO Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West, 7129, PO Box722, Western Cape Province (South Africa); Manikandan, E., E-mail: mani@tlabs.ac.za [UNESCO Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West, 7129, PO Box722, Western Cape Province (South Africa); Central Research Laboratory, Sree Balaji Medical College & Hospital (SBMCH), Chrompet, Bharath University, Chennai, 600044 (India); Maaza, M., E-mail: maaza@tlabs.ac.za [UNESCO Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West, 7129, PO Box722, Western Cape Province (South Africa)

    2015-11-05

    This study we reports for the first time on the synthesis and optical characteristics of free standing diamond-like carbon (DLC) deposited by pulsed laser deposition (PLD) onto graphene buffer layers for ultrahigh intensity laser based electron/proton acceleration applications. The fingerprint techniques of micro-Raman, UV–VIS–NIR and the IR spectroscopic investigations indicate that the suitability of such free standing DLC thin-films within the laser window and long wave infrared (LWIR) spectral range and hence their appropriateness for the targeted applications. - Highlights: • We report for the first time synthesis of free standing diamond-like carbon. • Pulsed laser deposition onto graphene buffer layers. • Fingerprint techniques of micro-Raman, UV–VIS–NIR and the IR spectroscopic investigations. • Ultrahigh intensity laser based electron/proton acceleration applications. • This material's suitable for the laser window and long wave infrared (LWIR) spectral range.

  10. ANFIS-based approach to studying subthreshold behavior including the traps effect for nanoscale thin-film DG MOSFETs

    Institute of Scientific and Technical Information of China (English)

    T.Bentrcia; F.Djeffal; E.Chebaaki

    2013-01-01

    A fuzzy framework based on an adaptive network fuzzy inference system (ANFIS) is proposed to evaluate the relative degradation of the basic subthreshold parameters due to hot-carrier effects for nanoscale thin-film double-gate (DG) MOSFETs.The effect of the channel length and thickness on the resulting degradation is addressed,and 2-D numerical simulations are used for the elaboration of the training database.Several membership function shapes are developed,and the best one in terms of accuracy is selected.The predicted results agree well with the 2-D numerical simulations and can be efficiently used to investigate the impact of the interface fixed charges and quantum confinement on nanoscale DG MOSFET subthreshold behavior.Therefore,the proposed ANFIS-based approach offers a simple and accurate technique to study nanoscale devices,including the hot-carrier and quantum effects.

  11. High efficiency thin film CdTe and a-Si based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  12. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

  13. Polymer-induced surface modifications of Pd-based thin films leading to improved kinetics in hydrogen sensing and energy storage applications.

    Science.gov (United States)

    Ngene, Peter; Westerwaal, Ruud J; Sachdeva, Sumit; Haije, Wim; de Smet, Louis C P M; Dam, Bernard

    2014-11-03

    The catalytic properties of Pd alloy thin films are enhanced by a thin sputtered PTFE coating, resulting in profound improvements in hydrogen adsorption and desorption in Pd-based and Pd-catalyzed hydrogen sensors and hydrogen storage materials. The remarkably enhanced catalytic performance is attributed to chemical modifications of the catalyst surface by the sputtered PTFE leading to a possible change in the binding strength of the intermediate species involved in the hydrogen sorption process.

  14. Corrosion in low dielectric constant Si-O based thin films: Buffer concentration effects

    Directory of Open Access Journals (Sweden)

    F. W. Zeng

    2014-05-01

    Full Text Available Organosilicate glass (OSG is often used as an interlayer dielectric (ILD in high performance integrated circuits. OSG is a brittle material and prone to stress-corrosion cracking reminiscent of that observed in bulk glasses. Of particular concern are chemical-mechanical planarization techniques and wet cleans involving solvents commonly encountered in microelectronics fabrication where the organosilicate film is exposed to aqueous environments. Previous work has focused on the effect of pH, surfactant, and peroxide concentration on the subcritical crack growth of these films. However, little or no attention has focused on the effect of the conjugate acid/base concentration in a buffer. Accordingly, this work examines the “strength” of the buffer solution in both acidic and basic environments. The concentration of the buffer components is varied keeping the ratio of acid/base and therefore pH constant. In addition, the pH was varied by altering the acid/base ratio to ascertain any additional effect of pH. Corrosion tests were conducted with double-cantilever beam fracture mechanics specimens and fracture paths were verified with ATR-FTIR. Shifts in the threshold fracture energy, the lowest energy required for bond rupture in the given environment, GTH, were found to shift to lower values as the concentration of the base in the buffer increased. This effect was found to be much larger than the effect of the hydroxide ion concentration in unbuffered solutions. The results are rationalized in terms of the salient chemical bond breaking process occurring at the crack tip and modeled in terms of the chemical potential of the reactive species.

  15. Method for nanomodulation of metallic thin films following the replica-antireplica process based on porous alumina membranes

    Science.gov (United States)

    Palma, J. L.; Denardin, J. C.; Escrig, J.

    2017-03-01

    In this paper we have introduced a method for modulation of metallic thin films by sputtering of metals on anodized aluminum templates. Using a high deposition rate during deposition of the non-magnetic metal on the Al pattern, we have separated the two metallic surfaces and, thus, imprinted a pattern of nanohills on a non-magnetic metallic film, such as Au, Ag or Cu. The morphology of the nanostructured metallic films was determined by scanning electron microscopy. Thus, we have confirmed that the ordering degree of the Al template remained after the replication process. Additionally, and as an example of use of these films, we have prepared Supermalloy thin films deposited by sputtering onto these nanostructured non-magnetic metals. The room temperature magnetic behavior of these thin films is also studied. Interestingly, we have found that when the external magnetic field is applied out of plane of the substrate, the coercivity increases linearly as we increase the radius of the nanohills. These soft magnetic films can open new opportunities for magnetic field sensor applications.

  16. Design and characterization of thin film microcoolers

    Science.gov (United States)

    LaBounty, Chris; Shakouri, Ali; Bowers, John E.

    2001-04-01

    Thin film coolers can provide large cooling power densities compared to bulk thermoelectrics due to the close spacing of hot and cold junctions. Important parameters in the design of such coolers are investigated theoretically and experimentally. A three-dimensional (3D) finite element simulator (ANSYS) is used to model self-consistently thermal and electrical properties of a complete device structure. The dominant three-dimensional thermal and electrical spreading resistances acquired from the 3D simulation are also used in a one-dimensional model (MATLAB) to obtain faster, less rigorous results. Heat conduction, Joule heating, thermoelectric and thermionic cooling are included in these models as well as nonideal effects such as contact resistance, finite thermal resistance of the substrate and the heat sink, and heat generation in the wire bonds. Simulations exhibit good agreement with experimental results from InGaAsP-based thin film thermionic emission coolers which have demonstrated maximum cooling of 1.15 °C at room temperature. With the nonideal effects minimized, simulations predict that single stage thin film coolers can provide up to 20-30 °C degrees centigrade cooling with cooling power densities of several 1000 W/cm2.

  17. Optical properties of thin polymer films

    Science.gov (United States)

    Kasarova, Stefka N.; Sultanova, Nina G.; Petrova, Tzveta; Dragostinova, Violeta; Nikolov, Ivan

    2009-10-01

    In this report three types of optical polymer thin films deposited on glass substrates are investigated. Transmission spectra of the polymer samples are obtained in the range from 400 nm to 1500 nm. A laser microrefractometer has been used to measure the refractive indices of the examined materials at 406, 656, 910 and 1320 nm. Dispersion properties of the polymer films are analyzed on the base of the Cauchy-Schott's and Sellmeier`s approximations. Dispersion coefficients are calculated and dispersion charts in the visible and near infrared spectral regions are presented and compared. Abbe numbers of mean and partial dispersion of the polymer films are obtained. Calculation of refractive indices at many laser emission wavelengths in the considered spectral range is accomplished.

  18. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. (Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center); Wei, G. (Mobil Solar Energy Corp., Billerica, MA (United States)); Yu, P.C. (PPG Industries, Inc., Monroeville, PA (United States))

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  19. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. [Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center; Wei, G. [Mobil Solar Energy Corp., Billerica, MA (United States); Yu, P.C. [PPG Industries, Inc., Monroeville, PA (United States)

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  20. Magnetostrictive thin films for microwave spintronics.

    Science.gov (United States)

    Parkes, D E; Shelford, L R; Wadley, P; Holý, V; Wang, M; Hindmarch, A T; van der Laan, G; Campion, R P; Edmonds, K W; Cavill, S A; Rushforth, A W

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

  1. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  2. Highly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure.

    Science.gov (United States)

    Li, H K; Chen, T P; Hu, S G; Li, X D; Liu, Y; Lee, P S; Wang, X P; Li, H Y; Lo, G Q

    2015-10-19

    Ultraviolet photodetector with p-n heterojunction is fabricated by magnetron sputtering deposition of n-type indium gallium zinc oxide (n-IGZO) and p-type nickel oxide (p-NiO) thin films on ITO glass. The performance of the photodetector is largely affected by the conductivity of the p-NiO thin film, which can be controlled by varying the oxygen partial pressure during the deposition of the p-NiO thin film. A highly spectrum-selective ultraviolet photodetector has been achieved with the p-NiO layer with a high conductivity. The results can be explained in terms of the "optically-filtering" function of the NiO layer.

  3. Weakly nonlinear stability of ultra-thin slipping films

    Institute of Scientific and Technical Information of China (English)

    HU Guohui

    2005-01-01

    A weakly nonlinear theory is presented to study the effects of slippage on the stability of the ultra-thin polymer films.The nonlinear mathematical model is constructed for perturbations of small finite amplitude based on hydrodynamic equations with the long wave approximation. Results reveal that the nonlinearity always accelerates the rupture of the films. The influences of the slip length, film thickness, and initial amplitude of perturbations on the rupture of the films are investigated.

  4. Broadband back grating design for thin film solar cells

    KAUST Repository

    Janjua, Bilal

    2013-01-01

    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  5. Growth and transport properties of thin Co-based Heusler films; Wachstum und Transporteigenschaften duenner Co-basierter Heusler-Filme

    Energy Technology Data Exchange (ETDEWEB)

    Schneider, Horst

    2010-07-01

    During this work, thin films of Co-based Heusler compounds were deposited under optimized conditions, and their structural, magnetic, and transport properties were investigated. The growth of the thin film samples was accomplished by two different methods. At first Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al and Co{sub 2}FeSi were deposited by sputter deposition from stoichiometric targets. This is considered the standard technique for the preparation of thin Heusler films. Also for the compounds investigated here it resulted in samples with a high degree of L2{sub 1} ordering. An excess of Fe atoms on Si sites was discovered by a detailed X-ray analysis in conjunction with NMR spectroscopy. The choice of different substrates allowed the adjustment of the growth direction. On the other hand, bulk magnetometry revealed that these sputter deposited films exhibit only a reduced magnetic moment, which is an indication of a reduced spin asymmetry at the Fermi level. One source of this problem seems to be a high residual gas pressure, which leads to an increased sample contamination. To improve this situation, a pulsed laser deposition system was constructed and put into operation. The resulting film growth under ultra-high vacuum conditions led to a further improvement of the short-range crystallographic ordering and a clear enhancement of the magnetic properties. The additional use of a metallic buffer layer resulted in samples with a smooth surface. This opens the door for a number of further analytical experiments, such as tunneling spectroscopy or Brillouin light scattering. After this successful demonstration of this growth technique, an additional method for the flexible variation of the film stoichiometry was implemented. In this work, this method was successfully applied in the deposition of Co{sub 2}Mn{sub 1-x}Fe{sub x}Si films. All samples in this series show a high degree of atomic ordering. Their magnetization values are compatible with the Slater-Pauling rule for

  6. Eddy current analysis of thin film recording heads

    Science.gov (United States)

    Shenton, D.; Cendes, Z. J.

    1984-03-01

    Due to inherently thin pole tips which enhance the sharpness of read/write pulses, thin-film magnetic recording heads provide a unique potential for increasing disk file capacity. However, the very feature of these heads which makes them attractive in the recording process, namely, their small size, also makes thin-film heads difficult to study experimentally. For this reason, a finite element simulation of the thin-film head has been developed to provide the magnetic field distribution and the resistance/inductance characteristics of these heads under a variety of conditions. A study based on a one-step multipath eddy current procedure is reported. This procedure may be used in thin film heads to compute the variation of magnetic field with respect to frequency. Computations with the IBM 3370 head show that a large phase shift occurs due to eddy currents in the frequency range 1-10 MHz.

  7. PREPARATION AND CHARACTERIZATION OF POLY-CRYSTALLINE SILICON THIN FILM

    Institute of Scientific and Technical Information of China (English)

    Y.F. Hu; H. Shen; Z.Y. Liu; L.S. Wen

    2003-01-01

    Poly-crystalline silicon thin film has big potential of reducing the cost of solar cells.In this paper the preparation of thin film is introduced, and then the morphology of poly-crystalline thin film is discussed. On the film we developed poly-crystalline silicon thin film solar cells with efficiency up to 6. 05% without anti-reflection coating.

  8. Micro-flow Immunosensor Based on Thin-film Interdigitated Gold Array Microelectrodes for Cancer Biomarker Detection.

    Science.gov (United States)

    Ravalli, Andrea; Lozzi, Luca; Marrazza, Giovanna

    2016-01-01

    In this paper, we reported the development of a micro-flow label-free impedimetric biosensor based on the use of thin-film interdigitated gold array microelectrodes (IDA) for the detection of carbohydrate antigen 125 (CA125). The immunosensor is developed through the electropolymerization of anthranilic acid (AA) on the surface of IDA electrodes followed by the covalent attachment of anti-CA125 monoclonal antibody. CA125 protein affinity reaction was then evaluated by means of electrochemical impedance spectroscopy (EIS). The sensor was characterized by electrochemical techniques and scanning electron microscopy (SEM). Using the optimized experimental conditions, the developed immunosensor showed a good analytical performance for CA125 detection from 0 to 100 U/mL with estimated limit of detection (LOD = 3Sblank/Slope) of 7 U/mL.

  9. All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response

    Directory of Open Access Journals (Sweden)

    Guiru Gu

    2011-01-01

    Full Text Available We report an all-printed thin-film transistor (TFT on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT solution that is primarily consists of semiconducting carbon nanotubes (CNTs with low metal impurities. The all-printed TFT exhibits a high ON/OFF ratio of around 103 and bias-independent transconductance over a certain gate bias range. Such bias-independent transconductance property is different from that of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs due to the special band structure and the one-dimensional (1D quantum confined density of state (DOS of CNTs. The bias-independent transconductance promises modulation linearity for analog electronics.

  10. Dataset demonstrating the modeling of a high performance Cu(In,Ga)Se2 absorber based thin film photovoltaic cell.

    Science.gov (United States)

    Asaduzzaman, Md; Bahar, Ali Newaz; Bhuiyan, Mohammad Maksudur Rahman

    2017-04-01

    The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG) substrate/Mo back-contact/CIGS absorber/CdS buffer/intrinsic ZnO/Al-doped ZnO window/Al-grid front-contact, the solar cell performance parameters such as open circuit voltage [Formula: see text], short circuit current density [Formula: see text], fill factor [Formula: see text], efficiency [Formula: see text], and collection efficiency [Formula: see text] have been analyzed.

  11. Self-learning ability realized with a resistive switching device based on a Ni-rich nickel oxide thin film

    Science.gov (United States)

    Liu, Y.; Chen, T. P.; Liu, Z.; Yu, Y. F.; Yu, Q.; Li, P.; Fung, S.

    2011-12-01

    The resistive switching device based on a Ni-rich nickel oxide thin film exhibits an inherent learning ability of a neural network. The device has the short-term-memory and long-term-memory functions analogous to those of the human brain, depending on the history of its experience of voltage pulsing or sweeping. Neuroplasticity could be realized with the device, as the device can be switched from a high-resistance state to a low-resistance state due to the formation of stable filaments by a series of electrical pulses, resembling the changes such as the growth of new connections and the creation of new neurons in the brain in response to experience.

  12. Preparation of thin film nanofibrous composite NF membrane based on EDC/NHS modified PAN-AA nanofibrous substrate

    Science.gov (United States)

    Yang, Y.; Wang, X.; Hsiao, B. S.

    2016-07-01

    A novel kind of thin-film nanofibrous composite (TFNC) nanofiltration (NF) membranes consisting of a polyamide (PA) barrier layer were successfully fabricated by interfacial polymerization (IFP) based on electrospun double-layer nanofibrous substrates, which have an ultrathin poly (acrylonitrile-co-acrylic acid) (PAN-AA) nanofibrous layer as top layer and a thicker polyacrylonitrile (PAN) nanofiber layer as bottom porous support layer. Immersing PAN/PAN-AA nanofibrous substrates into 1-ethyl-(3-3-dimethylaminopropyl) carbodiimide hydrochloride/N-hydroxysuccinimide (EDC/NHS) aqueous solution and piperazine (PIP) aqueous solution (0.20 wt%) sequentially for a period of time, the carboxyl groups on PAN-AA nanofibers were activated by carbodiimide and then reacted with the amide groups. The as prepared composite membrane has an integrated structure with high rejection rate (98.0%); high permeate flux (40.4 L/m2h) for MgSO4 aqueous solution (2 g/L).

  13. Polarization holographic recording in thin films of pure azopolymer and azopolymer based hybrid materials

    Science.gov (United States)

    Berberova, N.; Daskalova, D.; Strijkova, V.; Kostadinova, D.; Nazarova, D.; Nedelchev, L.; Stoykova, E.; Marinova, V.; Chi, C. H.; Lin, S. H.

    2017-02-01

    Recently, a birefringence enhancement effect was observed in azopolymers doped with various nanoparticles. The paper presents comparison between the parameters of polarization holographic gratings recorded in a pure azopolymer PAZO (Poly[1-[4-(3-carboxy-4-hydroxyphenylazo) benzenesulfonamido]-1,2-ethanediyl, sodium salt]) and in a hybrid PAZO-based organic/inorganic material with incorporated ZnO nanoparticles of size less than 50 nm. Laser emitting at 491 nm is used for the holographic recording. Along with the anisotropic grating in the volume of the media, surface relief is also formed. Gratings with different spatial frequencies are obtained by varying the recording angle. The time dependence of the diffraction efficiency is probed at 635 nm and the height of the relief gratings is determined by AFM. Our results indicate that both the diffraction efficiency and the height of the surface relief for the hybrid samples are enhanced with respect to the pure azopolymer films.

  14. Long-Period Fibre Grating Thin Film Sensors Based on Cladding Mode Coupling

    Institute of Scientific and Technical Information of China (English)

    XU Yan-Ping; GU Zheng-Tian; CHEN Jia-Bi

    2005-01-01

    @@ Based on a method of rigorous vector-field analysis, a numerical model of triple-clad long-period fibre grating is established. The vector components of the electric field for the HE11 cladding mode are plotted to study the field distribution of the cladding mode. The local intensity curves of the first six l = 1 cladding modes are also given. It is found that the low-order HE modes have a larger proportion of intensity localized in the core than the low-order EH modes, just like the double-clad LPFG. Further, the coupling constant between the core mode and the cladding mode is analysed. The results show that the coupling constant of the low-order HE increases monotonously when the mode number becomes larger, and it varies monotonously with the film thickness except for a certain specific region.

  15. Dynamic Characterization of Thin Film Magnetic Materials

    Science.gov (United States)

    Gu, Wei

    A broadband dynamic method for characterizing thin film magnetic material is presented. The method is designed to extract the permeability and linewidth of thin magnetic films from measuring the reflection coefficient (S11) of a house-made and short-circuited strip line testing fixture with or without samples loaded. An adaptive de-embedding method is applied to remove the parasitic noise of the housing. The measurements were carried out with frequency up to 10GHz and biasing magnetic fields up to 600 Gauss. Particular measurement setup and 3-step experimental procedures are described in detail. The complex permeability of a 330nm thick continuous FeGaB, 435nm thick laminated FeGaB film and a 100nm thick NiFe film will be induced dynamically in frequency-biasing magnetic field spectra and compared with a theoretical model based on Landau-Lifshitz-Gilbert (LLG) equations and eddy current theories. The ferromagnetic resonance (FMR) phenomenon can be observed among these three magnetic materials investigated in this thesis.

  16. Thin film cadmium telluride photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  17. Polyelectrolyte Coacervates Deposited as High Gas Barrier Thin Films.

    Science.gov (United States)

    Haile, Merid; Sarwar, Owais; Henderson, Robert; Smith, Ryan; Grunlan, Jaime C

    2017-01-01

    Multilayer coatings consisting of oppositely charged polyelectrolytes have proven to be extraordinarily effective oxygen barriers but require many processing steps to fabricate. In an effort to prepare high oxygen barrier thin films more quickly, a polyelectrolyte complex coacervate composed of polyethylenimine and polyacrylic acid is prepared. The coacervate fluid is applied as a thin film using a rod coating process. With humidity and thermal post-treatment, a 2 µm thin film reduces the oxygen transmission rate of 0.127 mm poly(ethylene terephthalate) by two orders of magnitude, rivalling conventional oxygen barrier technologies. These films are fabricated in ambient conditions using low-cost, water-based solutions, providing a tremendous opportunity for single-step deposition of polymeric high barrier thin films.

  18. Thermal Expansion Coefficients of Thin Crystal Films

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    The formulas for atomic displacements and Hamiltonian of a thin crystal film in phonon occupation number representation are obtained with the aid of Green's function theory. On the basis of these results, the formulas for thermal expansion coefficients of the thin crystal film are derived with the perturbation theory, and the numerical calculations are carried out. The results show that the thinner films have larger thermal expansion coefficients.

  19. Complex microstructures of ABC triblock copolymer thin films directed by polymer brushes based on self-consistent field theory.

    Science.gov (United States)

    Jiang, Zhibin; Xu, Chang; Qiu, Yu Dong; Wang, Xiaoliang; Zhou, Dongshan; Xue, Gi

    2014-01-01

    The morphology and the phase diagram of ABC triblock copolymer thin film directed by polymer brushes are investigated by the self-consistent field theory in three dimensions. The polymer brushes coated on the substrate can be used as a good soft template to tailor the morphology of the block copolymer thin films compared with those on the hard substrates. The polymer brush is identical with the middle block B. By continuously changing the composition of the block copolymer, the phase diagrams are constructed for three cases with the fixed film thickness and the brush density: identical interaction parameters, frustrated and non-frustrated cases. Some ordered complex morphologies are observed: parallel lamellar phase with hexagonally packed pores at surfaces (LAM3 (ll) -HFs), perpendicular lamellar phase with cylinders at the interface (LAM(⊥)-CI), and perpendicular hexagonally packed cylinders phase with rings at the interface (C2 (⊥)-RI). A desired direction (perpendicular or parallel to the coated surfaces) of lamellar phases or cylindrical phases can be obtained by varying the composition and the interactions between different blocks. The phase diagram of ABC triblock copolymer thin film wetted between the polymer brush-coated surfaces is very useful in designing the directed pattern of ABC triblock copolymer thin film.

  20. Optical modeling and simulation of thin-film photovoltaic devices

    CERN Document Server

    Krc, Janez

    2013-01-01

    In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

  1. Development of Thin Film Ceramic Thermocouples for High Temperature Environments

    Science.gov (United States)

    Wrbanek, John D.; Fralick, Gustave C.; Farmer, Serene C.; Sayir, Ali; Blaha, Charles A.; Gonzalez, Jose M.

    2004-01-01

    The maximum use temperature of noble metal thin film thermocouples of 1100 C (2000 F) may not be adequate for use on components in the increasingly harsh conditions of advanced aircraft and next generation launch technology. Ceramic-based thermocouples are known for their high stability and robustness at temperatures exceeding 1500 C, but are typically found in the form of rods or probes. NASA Glenn Research Center is investigating the feasibility of ceramics as thin film thermocouples for extremely high temperature applications to take advantage of the stability and robustness of ceramics and the non-intrusiveness of thin films. This paper will discuss the current state of development in this effort.

  2. Chemical etching of Tungsten thin films for high-temperature surface acoustic wave-based sensor devices

    Energy Technology Data Exchange (ETDEWEB)

    Spindler, M., E-mail: m.spindler@ifw-dresden.de [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany); Herold, S.; Acker, J. [BTU Cottbus – Senftenberg, Faculty of Sciences, P.O. Box 101548, 01968 Senftenberg (Germany); Brachmann, E.; Oswald, S.; Menzel, S.; Rane, G. [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany)

    2016-08-01

    Surface acoustic wave devices are widely used as wireless sensors in different application fields. Recent developments aimed to utilize those devices as temperature sensors even in the high temperature range (T > 300 °C) and in harsh environmental conditions. Therefore, conventional materials, which are used for the substrate and for the interdigital transducer finger electrodes such as multilayers or alloys based on Al or Cu have to be exchanged by materials, which fulfill some important criteria regarding temperature related effects. Electron beam evaporation as a standard fabrication method is not well applicable for depositing high temperature stable electrode materials because of their very high melting points. Magnetron sputtering is an alternative deposition process but is also not applicable for lift-off structuring without any further improvement of the structuring process. Due to a relatively high Ar gas pressure of about 10{sup −1} Pa, the sidewalls of the photoresist line structures are also covered by the metallization, which subsequently prevents a successful lift-off process. In this study, we investigate the chemical etching of thin tungsten films as an intermediate step between magnetron sputtering deposition of thin tungsten finger electrodes and the lift-off process to remove sidewall covering for a successful patterning process of interdigital transducers. - Highlights: • We fabricated Tungsten SAW Electrodes by magnetron sputtering technology. • An etching process removes sidewall covering of photoresist, which allows lift-off. • Tungsten etching rates based on a hydrogen peroxide solutions were determined.

  3. Dielectric thin-films by ion-beam sputtering deposition for III-V based infrared optoelectronic imaging

    Science.gov (United States)

    Nguyen, Jean

    The growing technological industry is demanding the development of powerful and smaller devices. Dielectric thin-films can play an important role to help push towards achieving these goals. However, their advantage of high-quality material and low material costs compared to bulk can only be achieved with consideration of the technique, conditions, and parameters. The sensitivity makes every step in the process extremely important, beginning from substrate preparation to the first initial layers of growth and ending with the testing/modeling of the devices. Further, not all applications want bulk-like properties, so the ability to adjust and fine tune the material characteristics opens up a wide range of opportunities with the advancements and can drive the power of the devices to an ultimate level. This work provides the motivation, theoretical basis, and experimental results for performance enhancement of optoelectronic devices through the use of high-quality dielectric thin-films by ion-beam sputtering deposition (IBSD). The advantages and disadvantages to this technique are demonstrated and compared to others. The optimization processes, relationships, and motivation of using seven different thin-film materials have been detailed and provided. Using IBSD, the performance improvements were demonstrated on infrared lasers and detectors. For lasers, a 170% increase in maximum output power was achieved using near-0% percent anti-reflection coatings (AR) and near-100% high-reflection (HR) coatings. Following, wide tunability was achieved by using the structures in an external cavity laser system, showing nearly a three-fold improvement in tuning range. Also, structurally robust lasers were achieved with a custom-tailored HR structure designed for damage resistance to high output power density operation, showing over 14W of peak output power for MOCVD lasers. For infrared photodetectors, over a 4 orders of magnitude decrease in current density and zero-bias resistance

  4. BDS thin film damage competition

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  5. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers us an opportunity to learn more about basic biological systems with one important variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would enable us to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  6. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  7. Organic photo detectors for an integrated thin-film spectrometer

    Science.gov (United States)

    Peters, Sabine; Sui, Yunwu; Glöckler, Felix; Lemmer, Uli; Gerken, Martina

    2007-09-01

    We introduce a thin-film spectrometer that is based on the superprism effect in photonic crystals. While the reliable fabrication of two and three dimensional photonic crystals is still a challenge, the realization of one-dimensional photonic crystals as thin-film stacks is a relatively easy and inexpensive approach. Additionally, dispersive thin-film stacks offer the possibility to custom-design the dispersion profile according to the application. The thin-film stack is designed such that light incident at an angle experiences a wavelength-dependent spatial beam shift at the output surface. We propose the monolithic integration of organic photo detectors to register the spatial beam position and thus determine the beam wavelength. This thin-film spectrometer has a size of approximately 5 mm2. We demonstrate that the output position of a laser beam is determined with a resolution of at least 20 μm by the fabricated organic photo detectors. Depending on the design of the thin-film filter the wavelength resolution of the proposed spectrometer is at least 1 nm. Possible applications for the proposed thin-film spectrometer are in the field of absorption spectroscopy, e.g., for gas analysis or biomedical applications.

  8. Nanoscale Thin Film Electrolytes for Clean Energy Applications

    Energy Technology Data Exchange (ETDEWEB)

    Nandasiri, Manjula I.; Sanghavi, Rahul P.; Kuchibhatla, Satyanarayana V N T; Thevuthasan, Suntharampillai

    2012-02-01

    Ceria and zirconia based systems can be used as electrolytes to develop solid oxide fuel cells for clean energy production and to prevent air pollution by developing efficient, reliable oxygen sensors. In this study, we have used oxygen plasma assisted molecular beam epitaxy (OPA-MBE) to grow samaria doped ceria (SDC), to understand the role of dopant concentration and geometry of the films towards the ionic conduction in these thin films. We have also discussed the Gd doped CeO2 (GDC) and Gd stabilized ZrO2 (GSZ) multi-layer thin films to investigate the effect of interfacial phenomena on the ionic conductivity of these hetero-structures. We found the optimum concentration to be 15 mol % SmO1.5, for achieving lowest electrical resistance in SDC thin films. The electrical resistance decreases with the increase in film thickness up to 200 nm. The results demonstrate the usefulness of this study towards establishing an optimum dopant concentration and choosing an appropriate thin film thickness to ameliorate the conductance of the SDC material system. Furthermore, we have explored the conductivity of highly oriented GDC and GSZ multi-layer thin films, wherein the conductivity increased with an increase in the number of layers. The extended defects and lattice strain near the interfaces increase the density of oxygen vacancies, which leads to enhanced ionic conductivity in multi-layer thin films.

  9. Thin film thermocouples for in situ membrane electrode assembly temperature measurements in a polybenzimidazole-based high temperature proton exchange membrane unit cell

    DEFF Research Database (Denmark)

    Ali, Syed Talat; Lebæk, Jesper; Nielsen, Lars Pleth

    2010-01-01

    This paper presents Type-T thin film thermocouples (TFTCs) fabricated on Kapton (polyimide) substrate for measuring the internal temperature of PBI(polybenzimidazole)-based high temperature proton exchange membrane fuel cell (HT-PEMFC). Magnetron sputtering technique was employed to deposit a 2 mu...

  10. Trapping of hydrogen in hafnium-based high kappa dielectric thin films for advanced CMOS applications

    Science.gov (United States)

    Ukirde, Vaishali

    In recent years, advanced high kappa gate dielectrics are under serious consideration to replace SiO2 and SiON in semiconductor industry. Hafnium-based dielectrics such as hafnium oxides, oxynitrides and Hf-based silicates/nitrided silicates are emerging as some of the most promising alternatives to SiO2/SiON gate dielectrics in complementary metal oxide semiconductor (CMOS) devices. Extensive efforts have been taken to understand the effects of hydrogen impurities in semiconductors and its behavior such as incorporation, diffusion, trapping and release with the aim of controlling and using it to optimize the performance of electronic device structures. In this dissertation, a systematic study of hydrogen trapping and the role of carbon impurities in various alternate gate dielectric candidates, HfO2/Si, HfxSi1-xO2/Si, HfON/Si and HfON(C)/Si is presented. It has been shown that processing of high kappa dielectrics may lead to some crystallization issues. Rutherford backscattering spectroscopy (RBS) for measuring oxygen deficiencies, elastic recoil detection analysis (ERDA) for quantifying hydrogen and nuclear reaction analysis (NRA) for quantifying carbon, X-ray diffraction (XRD) for measuring degree of crystallinity and X-ray photoelectron spectroscopy (XPS) were used to characterize these thin dielectric materials. ERDA data are used to characterize the evolution of hydrogen during annealing in hydrogen ambient in combination with preprocessing in oxygen and nitrogen.

  11. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    Rachana Gupta; Mukul Gupta; Thomas Gutberlet

    2008-11-01

    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron sputtering technique at ambient temperature. The film prepared with only Ar gas shows reflections corresponding to the permalloy phase in X-ray diffraction (XRD) pattern. The addition of nitrogen during sputtering results in broadening of the peaks in XRD pattern, which finally leads to an amorphous phase. The - loop for the sample prepared with only Ar gas is matching well with the values obtained for the permalloy. For the samples prepared with increased nitrogen partial pressure the magnetic moment decreased rapidly and the values of coercivity increased. The polarized neutron reflectivity measurements (PNR) were performed in the sample prepared with only Ar gas and with nitrogen partial pressure of 5 and 10%. It was found that the spin-up and spin-down reflectivities show exactly similar reflectivity for the sample prepared with Ar gas alone, while PNR measurements on 5 and 10% sample show splitting in the spin-up and spin-down reflectivity.

  12. TiO2 Thin Film UV Detectors Deposited by DC Reactive Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHANG Li-wei; YAO Ning; ZHANG Bing-lin; FAN Zhi-qin; YANG Shi-e; LU Zhan-ling

    2004-01-01

    Crystalline TiO2 thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide(ITO) thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandwich structure of C/ TiO2/ITO. The measurement of the I-V characteristics for these devices shows good ohmic contact. The photoresponse of TiO2 thin films was analyzed at different bias voltage. Voltage.

  13. ITO-Free Semitransparent Organic Solar Cells Based on Silver Thin Film Electrodes

    Directory of Open Access Journals (Sweden)

    Zhizhe Wang

    2014-01-01

    Full Text Available ITO-free semitransparent organic solar cells (OSCs based on MoO3/Ag anodes with poly(3-hexylthiophene and [6,6]-phenyl-C61-butyric acid methyl ester films as the active layer are investigated in this work. To obtain the optimal transparent (MoO3/Ag anode, ITO-free reference OSCs are firstly fabricated. The power conversion efficiency (PCE of 2.71% is obtained for OSCs based on the optimal MoO3 (2 nm/Ag (9 nm anode, comparable to that of ITO-based reference OSCs (PCE of 2.85%. Then based on MoO3 (2 nm/Ag (9 nm anode, ITO-free semitransparent OSCs with different thickness combination of Ca and Ag as the cathodes are investigated. It is observed from our results that OSCs with Ca (15 nm/Ag (15 nm cathode have the optimal transparency. Meanwhile, the PCE of 1.79% and 0.67% is obtained for illumination from the anode and cathode side, respectively, comparable to that of similar ITO-based semitransparent OSCs (PCE of 1.59% and 0.75% for illumination from the anode and cathode side, resp. (Sol. Energy Mater. Sol. Cells, 95, pp. 877–880, 2011. The transparency and PCE of ITO-free semitransparent OSCs can be further improved by introducing a light couple layer. The developed method is compatible with various substrates, which is instructive for further research of ITO-free semitransparent OSCs.

  14. A reversible bipolar WORM device based on AlOxNy thin film with Al nano phase embedded

    Science.gov (United States)

    Zhu, W.; Li, J.; Zhang, L.; Hu, X. C.

    2017-03-01

    An Al-rich AlOxNy thin film based reversible Write-Once-Read-Many-Times (WORM) memory device with MIS structure could transit from high resistance state (HRS, ∼1011 Ω) to low resistance state (LRS, ∼105 Ω) by sweeping voltage up to ∼20 V. The first switching could be recorded as writing process for WORM device which may relate to conductive path are formed through the thin film. The conductive path should be formed by both Al nano phase and oxygen vacancies. Among of them, Al nano phases are not easy to move, but oxygen vacancies could migrate under high E-field or at high temperature environment. Such conductive path is not sensitive to charging effect after it formed, but it could be broken by heating effect, which may relate to the migration of excess Al ions and oxygen vacancies at high temperature. After baking LRS (ON state) WORM device at 200 °C for 2 min, the conductivity will decrease to HRS which indicates conductive path is broken and device back to HRS (OFF state) again. This phenomenon could be recorded as recovery process. Both writing and recovery process related to migration of oxygen vacancies and could be repeated over 10 times in this study. It also indicates that there is no permanent breakdown occurred in MIS structured WORM device operation. We suggest that this conductive path only can be dissolved by a temperature sensitive electro-chemical action. This WORM device could maintain at LRS over 105 s with on-off ratio over 4 orders.

  15. Preparation and Photochromic Properties of Hybrid Thin Films Based on Heteropolyoxometallate and Polyacrylamide

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    series of photochromic hybrid films were prepared through entrapping Dawson type tungsten heteropolyoxometallates (P2W18O626-) and molybdenum heteropolyoxometallate (P2Mo18O626-) into polyacrylamide matrix. FTIR results showed that the Dawson geometry of heteropolyoxometallates is still preserved inside the composites and strong coulombic interaction is built between heteropolyoxometallates and polyacrylamide via hydrogen bonding. Irradiated with ultraviolet light, the transparent films change from colorless to blue and show reversible photochromism.The bleaching process occurs when the films are in contact with air or O2 in the dark. The molybdenum heteropolyoxometallate hybrid film has higher photochromic efficiency and slower bleaching reaction than tungsten heteropolyoxometallate hybrid film. ESR results indicated that polyacrylamide is a hydrogen donor and the photoreduced process is in accordance with the radical mechanism.

  16. TiO2 thin film photocatalyst

    Institute of Scientific and Technical Information of China (English)

    YU Jiaguo

    2004-01-01

    It is well known that the photocatalytic activity of TiO2 thin films strongly depends on the preparing methods and post-treatment conditions, since they have a decisive influence on the chemical and physical properties of TiO2 thin films.Therefore, it is necessary to elucidate the influence of the preparation process and post-treatment conditions on the photocatalytic activity and surface microstructures of the films. This review deals with the preparation of TiO2 thin film photocatalysts by wet-chemical methods (such as sol-gel, reverse micellar and liquid phase deposition) and the comparison of various preparation methods as well as their advantage and disadvantage. Furthermore, it is discussed that the advancement of photocatalytic activity, super-hydrophilicity and bactericidal activity of TiO2 thin film photocatalyst in recent years.

  17. Polythiophene thin films electrochemically deposited on sol-gel based TiO{sub 2} for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Valaski, R. [Divisao de Metrologia de Materiais (DIMAT), INMETRO, Xerem-Duque de Caxias, RJ 25250 (Brazil); Yamamoto, N.A.D.; Canestraro, C.D. [Departamento de Fisica, Universidade Federal do Parana, C. Postal 19044, 81531-990, Curitiba, PR (Brazil); Micaroni, L.; Mello, R.M.Q. [Departamento de Quimica, Universidade Federal do Parana, C. Postal 19081, 81531-990, Curitiba, PR (Brazil); Quirino, W.G.; Legani, C.; Achete, C.A. [Divisao de Metrologia de Materiais (DIMAT), INMETRO, Xerem-Duque de Caxias, RJ 25250 (Brazil); Roman, L.S. [Departamento de Fisica, Universidade Federal do Parana, C. Postal 19044, 81531-990, Curitiba, PR (Brazil); Cremona, M., E-mail: cremona@fis.puc-rio.b [Divisao de Metrologia de Materiais (DIMAT), INMETRO, Xerem-Duque de Caxias, RJ 25250 (Brazil); Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, 22453-970, RJ (Brazil)

    2010-12-30

    In this work, the influence of titanium dioxide (TiO{sub 2}) thin films on the efficiency of organic photovoltaic devices based on electrochemically synthesized polythiophene (PT) was investigated. TiO{sub 2} films were produced by sol-gel methods with controlled thickness. The best TiO{sub 2} annealing condition was determined through the investigation of the temperature influence on the electron charge mobility and resistivity in a range between 723 K and 923 K. The PT films were produced by chronoamperometric method in a 3-electrode cell under a controlled atmosphere. High quality PT films were produced onto 40 nm thick TiO{sub 2} layer previously deposited onto fluorine doped tin oxide (FTO) substrate. The morphology of PT films grown on both substrates and its strong influence on the device performance and PT minimum thickness were also investigated. The maximum external quantum efficiency (IPCE) reached was 9% under monochromatic irradiation ({lambda} = 610 nm; 1 W/m{sup 2}) that is three orders of magnitude higher than that presented by PT-homolayer devices with similar PT thickness. In addition, the open-circuit voltage (V{sub oc}) was about 700 mV and the short-circuit current density (J{sub sc}) was 0.03 A/m{sup 2} ({lambda} = 610 nm; 7 W/m{sup 2}). However, as for the PT-homolayer also the TiO{sub 2}/PT based devices are characterized by antibatic response when illuminated through FTO. Finally, the Fill Factor (FF) of these devices is low (25%), indicating that the series resistance (R{sub s}), which is strongly dependent of the PT thickness, is too large. This large R{sub s} value is compensated by TiO{sub 2}/PT interface morphology and by FTO/TiO{sub 2} and TiO{sub 2}/PT interface phenomena producing preferential paths in which the internal electrical field is higher, improving the device efficiency.

  18. Molecular simulation of freestanding amorphous nickel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

    2013-10-31

    Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

  19. Lithography based on memory effects resulting from photoinduced self-assembly of pyrene dimers in thin polymer films

    NARCIS (Netherlands)

    Ivan, M.G.; Scaiano, J.C.

    2009-01-01

    Pulsed laser irradiation of pyrene in thin films through lithographic masks leads to blue fluorescent images characteristic of pyrene excimer emission. The images are stable at room temperature and are readily observable using fluorescence microscopy. For a constant energy dose, the images are stron

  20. A non-labeled DNA biosensor based on light addressable potentiometric sensor modified with TiO_2 thin film

    Institute of Scientific and Technical Information of China (English)

    Xiao-lin ZONG; Chun-sheng WU; Xiao-ling WU; Yun-feng LU; Ping WANG

    2009-01-01

    Titanium dioxide (TiO_2) thin film was deposited on the surface of the light addressable potentiometric sensor (LAPS) to modify the sensor surface for the non-labeled detection of DNA molecules. To evaluate the effect of ultraviolet (UV) treatment on the silanization level of TiO_2 thin film by 3-aminopropyltrietboxysilane (APTS), fluorescein isothiocyanate (FITC) was used to label the amine group on the end of APTS immobilized onto the TiO_2 thin film. We found that, with UV irradiation, the silani-zation level of the irradiated area of the TiO_2 film was improved compared with the non-irradiated area under well-controlled conditions. This result indicates that TiO_2 can act as a coating material on the biosensor surface to improve the effect and effi-ciency of the covalent immobilization of biomolecules on the sensor surface. The artificially synthesized probe DNA molecules were covalently linked onto the surface of TiO_2 film. The hybridization of probe DNA and target DNA was monitored by the recording of Ⅰ-Ⅴ curves that shift along the voltage axis during the process of reaction. A significant LAPS signal can be detected at 10 μmol/L of target DNA sample.

  1. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    films. It is shown how accurate quantitative information about work function differences can be obtained and how these differences depend on the QWSs in the Pb thin films. The electron transport properties and mechanical characteristics of atom-sized metallic contacts are of fundamental interest in view of future nanoscale device technologies. Proximity probes like STM, metal break junctions, and related techniques, together with computational methods for simulating tip-sample interactions, have made it possible to address this question. While the importance of atomic structure and bonding for transport through single-atom junctions has repeatedly been emphasized, investigations of the influence of subsurface bonding properties have been rare. Here, the contact formation of a STM tip approaching Pb(111) thin films supported on Ag(111) substrates is investigated. Contacts on monolayer films are found to differ from contacts made on thicker Pb films. This behavior is explained in terms of different vertical bonding-strengths due to a charge-transfer induced surface dipole. Furthermore, the single-atom contact conductance on Pb(111) films beyond the first monolayer is determined. It is shown that analyses based on hitherto widely used conventional conductance histograms may overestimate the single-atom contact conductance by as much as 20%. (orig.)

  2. Plasmonic modes in thin films: quo vadis?

    Directory of Open Access Journals (Sweden)

    Antonio ePolitano

    2014-07-01

    Full Text Available Herein, we discuss the status and the prospect of plasmonic modes in thin films. Plasmons are collective longitudinal modes of charge fluctuation in metal samples excited by an external electric field. Surface plasmons (SPs are waves that propagate along the surface of a conductor with applications in magneto-optic data storage, optics, microscopy, and catalysis. In thin films the electronic response is influenced by electron quantum confinement. Confined electrons modify the dynamical screening processes at the film/substrate interface by introducing novel properties with potential applications and, moreover, they affect both the dispersion relation of SP frequency and the damping processes of the SP.Recent calculations indicate the emergence of acoustic surface plasmons (ASP in Ag thin films exhibiting quantum well states and in graphene films. The slope of the dispersion of ASP decreases with film thickness. We also discuss open issues in research on plasmonic modes in graphene/metal interfaes.

  3. Interfacial Effects on Pentablock Ionomer Thin Films

    Science.gov (United States)

    Etampawala, Thusitha; Ratnaweera, Dilru; Osti, Naresh; Shrestha, Umesh; Perahia, Dvora; Majewski, Jaroslaw

    2011-03-01

    The interfacial behavior of multi block copolymer thin films results from a delicate balance between inherent phase segregation due to incompatibility of the blocks and the interactions of the individual blocks with the interfaces. Here in we report a study of thin films of ABCBA penta block copolymers, anionically synthesized, comprising of centered randomly sulfonated polystyrene block to which rubbery poly-ethylenebutalene is connected, terminated by blocks of poly-t-butylstyrene, kindly provided by Kraton. AFM and neutron reflectometry studies have shown that the surface structure of pristine films depends on film thickness and ranges from trapped micelles to thin layered films. Annealing above Tg for the styrene block results in rearrangements into relatively featureless air interface. Neutron reflectivity studies have shown that annealed films forms layers whose plane are parallel to the solid substrate with the bulky block at the air interface and the ionic block at the solid interface.

  4. Scanned probe microscopy for thin film superconductor development

    Energy Technology Data Exchange (ETDEWEB)

    Moreland, J. [National Institute of Standards and Technology, Boulder, CO (United States)

    1996-12-31

    Scanned probe microscopy is a general term encompassing the science of imaging based on piezoelectric driven probes for measuring local changes in nanoscale properties of materials and devices. Techniques like scanning tunneling microscopy, atomic force microscopy, and scanning potentiometry are becoming common tools in the production and development labs in the semiconductor industry. The author presents several examples of applications specific to the development of high temperature superconducting thin films and thin-film devices.

  5. Growth of cuprate high temperature superconductor thin films

    Directory of Open Access Journals (Sweden)

    H-U Habermeier

    2006-09-01

    Full Text Available   This paper reviews briefly the development of physical vapour deposition based HTS thin film preparation technologies to today’s state-of-the-art methods. It covers the main trends of in-situ process and growth control. The current activities to fabricate tapes for power applications as well as to tailor interfaces in cuprate are described. Some future trends in HTS thin film research, both for science as well as application driven activities are outlined.

  6. Exchange bias in zinc ferrite-FeNiMoB based metallic glass composite thin films

    Energy Technology Data Exchange (ETDEWEB)

    R, Lisha; P, Geetha; B, Aravind P.; Anantharaman, M. R., E-mail: mraiyer@yahoo.com [Cochin University of Science and Technology, Cochin-682022 (India); T, Hysen [Christian College, Chengannur, Kerala-689121 (India); Ojha, S.; Avasthi, D. K. [Inter University Accelerator Centre, Vasant Kunj, New Delhi-110067 (India); Ramanujan, R. V. [School of Materials Science and Engineering, Nanyang Technological University (Singapore)

    2015-06-24

    The Exchange bias phenomenon and methods to manipulate the bias field in a controlled manner are thrust areas in magnetism due to its sophisticated theoretical concepts as well as advanced technological utility in the field of spintronics. The Exchange bias effect is observed as a result of ferromagnetic-antiferromagnetic (FM-AFM) exchange interaction, usually observed as a loop shift on field cooling below the Neel temperature of AFM. In the present study, we have chosen zinc ferrite which is a well known antiferromagnet, and FeNiMoB based metallic glass as the ferromagnet. The films were prepared by RF sputtering technique. The thickness and composition was obtained by RBS. The magnetic studies using SQUID VSM indicate exchange bias effect in the system. The effect of thermal annealing on exchange bias effect was studied. The observed exchange bias in the zinc ferrite-FeNiMoB system is not due to FM-AFM coupling but due to spin glass-ferromagnetic interaction.

  7. Fiber-Tip Fabry-Perot Interferometric Sensor based on a Thin Silver Film

    Science.gov (United States)

    2012-11-01

    interferometer (FPI), named after French physicists Charles Fabry and Alfred Perot, is typically formed by two reflecting surfaces or mirrors. It has been...utilized for sensing applications for a long time 13,14 . The interference is caused by waves successively reflected between the two parallel...Film Assume the film act as a free vibrating circular plate clamped rigidly at the edge. Its lowest resonant frequency f0 is expressed as follows

  8. Plasmon-exciton interaction and screening of exciton in ZnO-based thin film on bulk Pt as analyzed by spectroscopic ellipsometry

    Science.gov (United States)

    Darma, Yudi; Dimas Satrya, Christoforus; Marlina, Resti; Kurniawan, Robi; Herng, Tun Seng; Ding, Jun; Rusydi, Andrivo

    2017-01-01

    We study plasmon-exciton interaction in ZnO-based thin film on bulk Pt by using high resolution spectroscopic ellipsometry. ZnO films on quartz are used as reference. This study shows the strong electronic interactions between ZnO film and Pt by considering the significant suppression of exciton in ZnO film, in comparison to ZnO film on quartz. We found that plasmon in Pt are responsible to provide transferred electron for electronic blocking of exciton in ZnO film induce by spontaneous recombination from Pt. In the case of Cu doped ZnO film, we confirm screening effects on exciton and a localized interband transition for both systems (ZnO film on Pt and ZnO film on quartz). In Cu-doped ZnO film, electronic blocking of exciton by Pt plasmon is more pronounce rather than screening effect by interband transition. Our results show the importance of plasmon from substrate and doping to modify the optical properties of wide bandgap semiconductor.

  9. Anisotropic Heisenberg model in thin film geometry

    Energy Technology Data Exchange (ETDEWEB)

    Akıncı, Ümit

    2014-01-01

    The effect of the anisotropy in the exchange interaction on the phase diagrams and magnetization behavior of the Heisenberg thin film has been investigated with effective field formulation in a two spin cluster using the decoupling approximation. Phase diagrams and magnetization behaviors have been obtained for several different cases, by grouping the systems in accordance with, whether the surfaces/interior of the film has anisotropic exchange interaction or not. - Highlights: • Phase diagrams of the anisotropic Heisenberg model on the thin film obtained • Dependence of the critical properties on the film thickness obtained • Effect of the anisotropy on the magnetic properties obtained.

  10. Insect thin films as solar collectors.

    Science.gov (United States)

    Heilman, B D; Miaoulis, L N

    1994-10-01

    A numerical method for simulation of microscale radiation effects in insect thin-film structures is described. Accounting for solar beam and diffuse radiation, the model calculates the reflectivity and emissivity of such structures. A case study examines microscale radiation effects in butterfuly wings, and results reveal a new function of these multilayer thin films: thermal regulation. For film thicknesses of the order of 0.10 µm, solar absorption levels vary by as much as 25% with small changes in film thickness; for certain existing structures, absorption levels reach 96%., This is attributed to the spectral distribution of the reflected radiation, which consists of a singular reflectance peak within the solar spectrum.

  11. Improvement of Film Quality in CuInSe2 Thin Films Fabricated by a Non-Vacuum, Nanoparticle-Based Approach

    Science.gov (United States)

    Zhang, Yiwen; Ito, Manabu; Tamura, Tomoaki; Yamada, Akira; Konagai, Makoto

    2011-04-01

    To improve the quality of CuInSe2 (CIS) thin films fabricated by a non-vacuum, nanoparticle-based approach, in this study, two categories of nanoparticles, Cu (InGa) Se2 (CIGS) nanoparticles and copper selenide (Cu-Se) with indium selenide (In-Se) nanoparticles are investigated. It is found that the Cu-Se with In-Se nanoparticles show a higher crystallization velocity than CIGS nanoparticles. The films obtained from Cu-Se with In-Se nanoparticles exhibit higher crystallinity with a larger grain size. Thiourea is applied as a sintering additive during the selenization process. It is clarified that the addition of thiourea is very effective for grain growth and the fabrication of a dense CIS layer. The cell performance is measured under Air Mass 1.5 irradiation. The efficiency of the solar cell, fabricated using Cu-Se, In-Se nanoparticles with thiourea, is 2.15%, higher than that of the solar cell fabricated using CIGS nanoparticles, which is 0.28%.

  12. Modeling plasmonic scattering combined with thin-film optics.

    Science.gov (United States)

    Schmid, M; Klenk, R; Lux-Steiner, M Ch; Topic, M; Krc, J

    2011-01-14

    Plasmonic scattering from metal nanostructures presents a promising concept for improving the conversion efficiency of solar cells. The determination of optimal nanostructures and their position within the solar cell is crucial to boost the efficiency. Therefore we established a one-dimensional optical model combining plasmonic scattering and thin-film optics to simulate optical properties of thin-film solar cells including metal nanoparticles. Scattering models based on dipole oscillations and Mie theory are presented and their integration in thin-film semi-coherent optical descriptions is explained. A plasmonic layer is introduced in the thin-film structure to simulate scattering properties as well as parasitic absorption in the metal nanoparticles. A proof of modeling concept is given for the case of metal-island grown silver nanoparticles on glass and ZnO:Al/glass substrates. Using simulations a promising application of the nanoparticle integration is shown for the case of CuGaSe(2) solar cells.

  13. Antimony selenide thin-film solar cells

    Science.gov (United States)

    Zeng, Kai; Xue, Ding-Jiang; Tang, Jiang

    2016-06-01

    Due to their promising applications in low-cost, flexible and high-efficiency photovoltaics, there has been a booming exploration of thin-film solar cells using new absorber materials such as Sb2Se3, SnS, FeS2, CuSbS2 and CuSbSe2. Among them, Sb2Se3-based solar cells are a viable prospect because of their suitable band gap, high absorption coefficient, excellent electronic properties, non-toxicity, low cost, earth-abundant constituents, and intrinsically benign grain boundaries, if suitably oriented. This review surveys the recent development of Sb2Se3-based solar cells with special emphasis on the material and optoelectronic properties of Sb2Se3, the solution-based and vacuum-based fabrication process and the recent progress of Sb2Se3-sensitized and Sb2Se3 thin-film solar cells. A brief overview further addresses some of the future challenges to achieve low-cost, environmentally-friendly and high-efficiency Sb2Se3 solar cells.

  14. Ferromagnetic properties of fcc Gd thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bertelli, T. P., E-mail: tambauh@gmail.com; Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y. [Universidade Federal do Espírito Santo, Departamento de Física, Vitória/ES 29075-910 (Brazil); Pessoa, M. S. [Universidade Federal do Espírito Santo, Departamento de Ciências Naturais, São Mateus/ES 29932-540 (Brazil)

    2015-05-28

    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  15. Electrochromic performances of nonstoichiometric NiO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Moulki, H.; Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Mihelčič, M.; Vuk, A. Šurca [National Institute of Chemistry, NIC, Hajdrihova 19, SI-1000 Ljubljana (Slovenia); Švegl, F. [Amanova Ltd., Tehnološki Park 18, SI-1000 Ljubljana (Slovenia); Orel, B. [National Institute of Chemistry, NIC, Hajdrihova 19, SI-1000 Ljubljana (Slovenia); Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Alfredsson, M.; Chadwick, A.V. [Functional Materials Group, School of Physical Sciences, University of Kent, Canterbury, Kent CT2 7NH (United Kingdom); Gianolio, D. [Diamond Light Source Ltd., Harwell Science and Innovation Campus, OX11 0DE Didcot (United Kingdom); Rougier, A., E-mail: Rougier@icmcb-bordeaux.cnrs.fr [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France)

    2014-02-28

    Electrochromic (EC) performances of Ni{sup 3+} containing NiO thin films, called modified NiO thin films, prepared either by pulsed laser deposition or by chemical route are reported. When cycled in lithium based electrolyte, the comparison of the EC behavior of nonstoichiometric NiO thin films points out a larger optical contrast for the films synthesized by chemical route with the absence of an activation period on early electrochemical cycling due in particular to a larger porosity. Herein we demonstrate faster kinetics for modified NiO thin films cycled in lithium ion free electrolyte. Finally, X-ray absorption spectroscopy is used for a preliminary understanding of the mechanism involved in this original EC behavior linked to the film characteristics including their disorder character, the presence of Ni{sup 3+} and their porous morphology. - Highlights: • Nonstoichiometric NiO thin films • Electrochromic performances in lithium free electrolyte • X-ray absorption spectroscopy investigation of as-deposited films and upon cycling.

  16. Thin-film Organic-based Solar Cells for Space Power

    Science.gov (United States)

    Bailey, Sheila G.; Harris, Jerry D.; Hepp, Aloysius F.; Anglin, Emily J.; Raffaelle, Ryne P.; Clark, Harry R., Jr.; Gardner, Susan T. P.; Sun, Sam S.

    2002-01-01

    Recent advances in dye-sensitized and organic polymer solar cells have lead NASA to investigate the potential of these devices for space power generation. Dye-sensitized solar cells were exposed to simulated low-earth orbit conditions and their performance evaluated. All cells were characterized under simulated air mass zero (AM0) illumination. Complete cells were exposed to pressures less than 1 x 10(exp -7) torr for over a month, with no sign of sealant failure or electrolyte leakage. Cells from Solaronix SA were rapid thermal cycled under simulated low-earth orbit conditions. The cells were cycled 100 times from -80 C to 80 C, which is equivalent to 6 days in orbit. The best cell had a 4.6 percent loss in efficiency as a result of the thermal cycling. In a separate project, novel -Bridge-Donor-Bridge- Acceptor- (-BDBA-) type conjugated block copolymer systems have been synthesized and characterized by photoluminescence (PL). In comparison to pristine donor or acceptor, the PL emissions of final -B-D-B-A- block copolymer films were quenched over 99 percent. Effective and efficient photo induced electron transfer and charge separation occurs due to the interfaces of micro phase separated donor and acceptor blocks. The system is very promising for a variety high efficiency light harvesting applications. Under an SBIR contract, fullerene-doped polymer-based photovoltaic devices were fabricated and characterized. The best devices showed overall power efficiencies of approx. 0.14 percent under white light. Devices fabricated from 2 percent solids content solutions in chlorobenzene gave the best results. Presently, device lifetimes are too short to be practical for space applications.

  17. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

    Science.gov (United States)

    Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

    2011-10-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  18. Electrical Resistance Tomography of Conductive Thin Films

    CERN Document Server

    Cultrera, Alessandro

    2016-01-01

    The Electrical Resistance Tomography (ERT) technique is applied to the measurement of sheet conductance maps of both uniform and patterned conductive thin films. Images of the sheet conductance spatial distribution, and local conductivity values are obtained. Test samples are tin oxide films on glass substrates, with electrical contacts on the sample boundary, some samples are deliberately patterned in order to induce null conductivity zones of known geometry while others contain higher conductivity inclusions. Four-terminal resistance measurements among the contacts are performed with a scanning setup. The ERT reconstruction is performed by a numerical algorithm based on the total variation regularization and the L-curve method. ERT correctly images the sheet conductance spatial distribution of the samples. The reconstructed conductance values are in good quantitative agreement with independent measurements performed with the van der Pauw and the four-point probe methods.

  19. Electron impinging on metallic thin film targets

    Energy Technology Data Exchange (ETDEWEB)

    Rouabah, Z. [Laboratoire de Physique Moleculaire et des Collisions, ICPMB (FR CNRS 2843), Institut de Physique, Universite Paul Verlaine-Metz, Metz Cedex 3 (France); Laboratoire Materiaux et Systemes Electroniques, Centre Universitaire de Bordj-Bou-Arreridj, El-Anasser, 34265 Bordj-Bou-Arreridj (Algeria); Bouarissa, N., E-mail: N_Bouarissa@yahoo.fr [Department of Physics, Faculty of Science, King Khalid University, Abha, P.O.Box 9004 (Saudi Arabia); Champion, C. [Laboratoire de Physique Moleculaire et des Collisions, ICPMB (FR CNRS 2843), Institut de Physique, Universite Paul Verlaine-Metz, Metz Cedex 3 (France)

    2010-03-15

    Based on the Vicanek and Urbassek theory [M. Vicanek, H.M. Urbassek, Phys. Rev. B 44 (1991) 7234] combined to a home-made Monte Carlo simulation, the present work deals with backscattering coefficients, mean penetration depths and stopping profiles for 1-4 keV electrons normally incident impinging on Al and Cu thin film targets. The cross-sections used to describe the electron transport are calculated via the appropriate analytical expression given by Jablonski [A. Jablonski, Phys. Rev. B 58 (1998) 16470] whose new improved version has been recently given [Z. Rouabah, N. Bouarissa, C. Champion, N. Bouaouadja, Appl. Surf. Sci. 255 (2009) 6217]. The behavior of the backscattering coefficient, mean penetration depth and stopping profiles versus the metallic film thickness at the nanometric scale and beyond is here analyzed and discussed.

  20. Separation Efficiency of Thin-film Evaporators

    Institute of Scientific and Technical Information of China (English)

    R.Billet

    2004-01-01

    The recovery of contaminants and useful substances from liquid wastes, the purification of production effluents and the separation of thermally instable mixtures are some of the multivarious applications of thin-film distillors in many processes of the chemical and allied industries and of the food industries. In a study carried out in pilot plants with distillation test systems there was found a good agreement between the experimental separation results and those obtained by computing with a theorectical model; the latter is based on the assumption of phase equilibrium between the vapour formed on an infinitely small element of area in a liquid film of any given concentric periphery of the vertically arranged evaporator. These tests were perfomed under various phase loads.

  1. Science and technology of cuprate-based high temperature superconductor thin films, heterostructures and superlattices—the first 30 years (Review Article)

    Science.gov (United States)

    Habermeier, H.-U.

    2016-10-01

    thin film orientation, generating well defined antiphase boundaries in YBa2Cu3O7-δ thin films as flux-line pinning centers as well as contributions to understand fluctuation conductivity in relation to the pseudogap state. In the last section new developments in high Tc cuprate based heterostructures and superlattices are reviewed with a special focus on the opportunities offered by interface-induced electronic interactions.

  2. Highly stretchable wrinkled gold thin film wires

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joshua, E-mail: joshuk7@uci.edu; Park, Sun-Jun; Nguyen, Thao [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Chu, Michael [Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States); Pegan, Jonathan D. [Department of Materials and Manufacturing Technology, University of California, Irvine, California 92697 (United States); Khine, Michelle, E-mail: mkhine@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States)

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  3. Thin films for geothermal sensing: Final report

    Energy Technology Data Exchange (ETDEWEB)

    1987-09-01

    The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

  4. Manganese ferrite thin films Part II: Properties

    NARCIS (Netherlands)

    Hulscher, W.S.

    1972-01-01

    Some properties of evaporated manganese ferrite thin films are investigated, e.g. resistivity, magnetization reversal, Curie temperature, Faraday rotation and optical absorption. The properties are partly related to the partial oxygen pressure present during a preceding annealing process.

  5. Data storage applications based on LiCoO{sub 2} thin films grown on Al{sub 2}O{sub 3} and Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Svoukis, E., E-mail: svoukis.efthymios@ucy.ac.cy [Nanotechnology Research Unit & Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., 1678 Nicosia (Cyprus); Mihailescu, C.N. [Nanotechnology Research Unit & Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., 1678 Nicosia (Cyprus); National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, P.O. Box MG-36, 077125 Magurele (Romania); Mai, V.H. [CEA, LIST, 91191 Gif sur Yvette Cedex (France); Schneegans, O. [Laboratoire Génie Electrique et Electronique de Paris, UMR 8507 of CNRS, UPMC and Paris-Sud Universities, Supélec, 91192 Gif sur Yvette Cedex (France); Breza, K.; Lioutas, C. [Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Giapintzakis, J., E-mail: giapintz@ucy.ac.cy [Nanotechnology Research Unit & Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., 1678 Nicosia (Cyprus)

    2016-09-15

    Highlights: • LiCoO{sub 2} thin films are shown to be potential candidates for data storage applications. • High quality LiCoO{sub 2} thin films have been grown by PLD on (0 0 0 1) Al{sub 2}O{sub 3} and (111) Si substrates. • Epitaxial relations have been determined for LiCoO{sub 2}/Al{sub 2}O{sub 3} with high resolution X-ray diffraction (in-plane and out-of-plane configurations). • Surface resistance modification have been obtained by the application of an external bias voltage. • A mechanism for the surface resistance modifications is presented. - Abstract: In this study, LiCoO{sub 2} thin films were investigated for data storage applications based on scanning probe mediated approaches. LiCoO{sub 2}, compared to other materials proposed for scanning probe mediated nanoscale patterning, is highly stable and exhibits reversible electrochemical surface modifications. LiCoO{sub 2} thin films have been grown by pulsed laser deposition on Al{sub 2}O{sub 3} and Si substrates over a range of deposition temperatures. The crystal structure and the microstructure of the films has been inferred through in- and out-of-plane X-ray diffraction studies and high-resolution transmission electron microscopy, respectively. The influence of the film deposition temperature on the surface electrical properties of the LiCoO{sub 2} films is discussed along with the relevant mechanism of surface resistance modification.

  6. Temperature effect on elastic modulus of thin films and nanocrystals

    Science.gov (United States)

    Liang, Lihong; Li, Meizhi; Qin, Fuqi; Wei, Yueguang

    2013-02-01

    The stability of nanoscale devices is directly related to elasticity and the effect of temperature on the elasticity of thin films and nanocrystals. The elastic instability induced by rising temperature will cause the failure of integrated circuits and other microelectronic devices in service. The temperature effect on the elastic modulus of thin films and nanocrystals is unclear although the temperature dependence of the modulus of bulk materials has been studied for over half a century. In this paper, a theoretical model of the temperature-dependent elastic modulus of thin films and nanocrystals is developed based on the physical definition of the modulus by considering the size effect of the related cohesive energy and the thermal expansion coefficient. Moreover, the temperature effect on the modulus of Cu thin films is simulated by the molecular dynamics method. The results indicate that the elastic modulus decreases with increasing temperature and the rate of the modulus decrease increases with reducing thickness of thin films. The theoretical predictions based on the model are consistent with the results of computational simulations, semi-continuum calculations and the experimental measurements for Cu, Si thin films and Pd nanocrystals.

  7. Visible-light photochromic nanocomposite thin films based on polyvinylpyrrolidone and polyoxometalates supported on clay minerals

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiang-yu; Dong, Qi [Key Lab of Groundwater Resources and Environment, Ministry of Education, Jilin University, Changchun 130021 (China); Meng, Qing-ling [Key Laboratory of Songliao Aquatic Environment, Ministry of Education, Jilin Jianzhu University, Changchun 130118 (China); Yang, Jun-Yan [Key Lab of Groundwater Resources and Environment, Ministry of Education, Jilin University, Changchun 130021 (China); Feng, Wei, E-mail: weifeng@jlu.edu.cn [Key Lab of Groundwater Resources and Environment, Ministry of Education, Jilin University, Changchun 130021 (China); Han, Xiang-kui [Key Laboratory of Songliao Aquatic Environment, Ministry of Education, Jilin Jianzhu University, Changchun 130118 (China)

    2014-10-15

    Graphical abstract: - Highlights: • Hybrid film was synthesized by entrapping PMoA supported on the Na-MMT into PVPd. • Na-MMT performed the function of excellent dispersion. • The hybrid film had good visible-light photochromic properties. • The photo-reduction process occurred according to the proton transfer mechanism. - Abstract: A novel reversible photochromic nanocomposite film was prepared by entrapping phosphomolybdic acid supported on the sodium bentonite (PMoA/Na-MMT) into polyvinylpyrrolidone (PVPd). The microstructure, thermal stability, photochromic behavior and mechanism of the hybrid film were investigated. Fourier transform infrared spectroscopy (FT-IR) results illustrated that the Keggin geometry of polyoxometalates (PMoA) and organic groups of PVPd were still preserved inside the composites and non-covalent bond interaction was built between PMoA/Na-MMT and PVPd polymer matrix. Transmission electron microscopy (TEM) image showed that PMoA nanoparticles were finely dispersed in Na-MMT which exhibited fine stratified structure. Atomic force microscopy (AFM) images indicated that the surface topography of polymeric matrix changed after adding PMoA/Na-MMT, and the surface appearance of nanocomposite film was different before and after visible-light irradiation. The stability of the hybrid film and the effect of the perturbation of Na-MMT on the stability were determined by means of the thermogravimetric analysis (TG) and differential thermal analysis (DTA). Irradiated with visible light, the ultraviolet-–visible spectra (UV–vis) showed that the hybrid films changed from colorless to blue and could recover the colorless state gradually in air, where oxygen played an important role during the bleaching process. The hybrid films exhibited excellent bleaching ability during the heating. According to the X-ray photoelectron spectroscopy (XPS) analysis, the appearance of Mo{sup 5+} species indicated the photo-reduction reaction between PMo

  8. A new dynamical diffraction-based technique of residual stress measurements in thin films

    CERN Document Server

    Agamalian, M; Kaiser, H; Rehm, C; Werner, S A

    2002-01-01

    The recently discovered dynamical diffraction effect 'neutron camel' was used for residual stress measurements in a thick Si (111) crystal coated with a 2000 A-thick Ni film. The observed asymmetry of the back-face rocking curve corresponds to the bending radius of propor to 19 km and the tension force applied to the Ni film is propor to 90 N/m. Relative deformation of the Si crystallographic cells in the vicinity of diffractive surfaces is vertical stroke partial deriv u sub z /partial deriv z vertical stroke approx 1.6 x 10 sup - sup 6. (orig.)

  9. A general water-based precursor solution approach to deposit earth abundant Cu2ZnSn(S,Se)4 thin film solar cells

    Science.gov (United States)

    Yang, Yanchun; Kang, Xiaojiao; Huang, Lijian; Wei, Song; Pan, Daocheng

    2016-05-01

    Earth abundant Cu2ZnSn(S,Se)4 (CZTSSe) has been considered as one of the most promising thin film solar cell absorber candidates. Here, we develop a facile water-based precursor solution approach for depositing high-efficiency Cu2ZnSn(S,Se)4 thin film solar cells. In this environmentally friendly approach, inexpensive elemental Cu, Zn, Sn and S powders are used as the starting materials and are dissolved in the aqueous solution of thioglycolic acid and methylamine, forming a homogeneous precursor solution for depositing Cu2ZnSnS4 nanocrystal thin film. As-deposited CZTS nanocrystal thin films are selenized to form the large-grain CZTSSe absorber layers. It was found that Na doping plays an important role in the formation of the extremely dense and flat CZTSSe absorber layer, and fill factor can be significantly improved for Na-doped CZTSSe solar cells, which lead to a photoelectric conversion efficiency of 6.96% with an open-circuit voltage of 378 mV, a short current density of 28.17 mA cm-2, and a fill factor of 65.4%.

  10. Polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  11. Thin solid-lubricant films in space

    Science.gov (United States)

    Roberts, E. W.

    Low-friction films of thickness as low as 1 micron, created through sputter-deposition of low shear strength materials, are required in spacecraft applications requiring low power dissipation, such as cryogenic devices, and low torque noise, such as precision-pointing mechanisms. Due to their thinness, these coatings can be applied to high precision-machined tribological components without compromising their functional accuracy. Attention is here given to the cases of thin solid films for ball bearings, gears, and journal bearings.

  12. Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate

    KAUST Repository

    Aktakka, Ethem Erkan

    2013-10-01

    This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.

  13. Studies in thin film flows

    CERN Document Server

    McKinley, I S

    2000-01-01

    the general case of non-zero capillary number numerically. Using the lubrication approximation to the Navier-Stokes equations we investigate the evolution and stability of a thin film of incompressible Newtonian fluid on a planar substrate subjected to a jet of air blowing normally to the substrate. For the simple model of the air jet we adopt, the initially axisymmetric problems we study are identical to those of a drop spreading on a turntable rotating at constant angular velocity (the simplest model for spin coating). We consider both drops without a dry patch (referred to as 'non-annular') and drops with a dry patch at their centre (referred to as 'annular'). First, both symmetric two-dimensional and axisymmetric three-dimensional drops are considered in the quasi-static limit of small capillary number. The evolution of both non-annular and annular drops and the stability of equilibrium solutions to small perturbations with zero wavenumber are determined. Using a specially developed finite-difference code...

  14. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  15. 8% Efficient thin-film polycrystalline-silicon solar cells based on aluminium-induced crystallization and thermal CVD

    Energy Technology Data Exchange (ETDEWEB)

    Gordon, I.; Carnel, L.; Van Gestel, D.; Beaucarne, G.; Poortmans, J. [IMEC VZW, Leuven (Belgium)

    2006-07-01

    A considerable cost reduction could be achieved in photovoltaics if efficient solar cells could be made from polycrystalline-silicon (pc-Si) thin films on inexpensive substrates. We recently showed promising solar cells results using pc-Si layers obtained by aluminium-induced crystallization (AlC) of amorphous silicon in combination with thermal chemical vapor deposition (CVD). To obtain highly efficient pc-Si solar cells, however, the material quality has to be optimized and cell processes different from those applied for standard bulk-Si solar cells have to be developed. In this work, we present the different process steps that we recently developed to enhance the efficiency of pc-Si solar cells on alumina substrates made by AlC in combination with thermal CVD. Our present pc-Si solar cell process yields cells in substrate configuration with efficiencies so far of up to 8.0%. Spin-on oxides are used to smoothen the alumina substrate surface to enhance the electronic quality of the absorber layers. The cells have heterojunction emitters consisting of thin a-Si layers that yield much higher V{sub oc} values than classical diffused emitters. Base and emitter contacts are on top of the cell in interdigitated finger patterns, leading to fill factors above 70%. The front surface of the cells is plasma textured to increase the current density. Our present pc-Si solar cell efficiency of 8% together with the fast progression that we have made over the last few years indicate the large potential of pc-Si solar cells based on the AlC seed layer approach. (author)

  16. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    Science.gov (United States)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  17. Visible blind ultraviolet photodetector based on CH3NH3PbCl3 thin film.

    Science.gov (United States)

    Wang, Wenzhen; Xu, Haitao; Cai, Jiang; Zhu, Jiabin; Ni, Chaowei; Hong, Feng; Fang, Zebo; Xu, Fuzong; Cui, Siwei; Xu, Run; Wang, Linjun; Xu, Fei; Huang, Jian

    2016-04-18

    We report a prototypical device of CH3NH3PbCl3 film ultraviolet photodetectors that were fabricated with a coplanar metal-semiconductor-metal Au interdigital electrode configuration. Pure phase CH3NH3PbCl3 films with a good crystallinity were formed by a hybrid sequential deposition process featured with inter-diffusion of PbCl2 and CH3NH3Cl upon annealing. The CH3NH3PbCl3 film photodetector exhibits a high responsivity of 7.56 A /W at 360 nm, a ultraviolet/visible rejection ratio (R360 nm/R500 nm) was about two orders of magnitude and fast response speed with a rising time of 170 μs and a decay time of 220 μs. All the above results demonstrate CH3NH3PbCl3 film photodetector as a competitive candidate in the application of visible blind UV detectors.

  18. Effect of Ti seed and spacer layers on structure and magnetic properties of FeNi thin films and FeNi-based multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Svalov, A.V., E-mail: andrey.svalov@ehu.es [Departamento de Electricidad y Electrónica, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain); Department of Magnetism and Magnetic Nanomaterials, Ural Federal University, 620002 Ekaterinburg (Russian Federation); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain); Kurlyandskaya, G.V. [Departamento de Electricidad y Electrónica, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain); Department of Magnetism and Magnetic Nanomaterials, Ural Federal University, 620002 Ekaterinburg (Russian Federation)

    2014-10-15

    Highlights: • Fe{sub 19}Ni{sub 81} films and FeNi-based multilayers were prepared by magnetron sputtering. • The samples were deposited onto glass substrates at room temperature. • Ti/FeNi films exhibit good (1 1 1) texture and crystallinity. • The thick Cu seed increases the coercive force of the magnetic layer. • The thin Ti spacer restores the magnetic softness of the Cu/Ti/FeNi multilayers. - Abstract: The microstructure and magnetic properties of sputtered permalloy films and FeNi-based multilayers prepared by magnetron sputtering have been studied. X-ray diffraction measurements indicate that Ti/FeNi films exhibit good (1 1 1) texture and crystallinity. Ti/FeNi bilayers with high crystallographic quality have relatively low resistivity. The Ti seed layer does not influence the magnetic properties of FeNi film in Ti/FeNi bilayers, but the thick Cu seed layer leads to an increase of the coercive force of the magnetic layer. For the FeNi films deposited on thick Cu seed layer, the (0 1 0) and (0 0 2) diffraction peaks of hcp nickel were clearly observed. The thin Ti spacer between Cu and FeNi layers prevents the formation of the nickel phase and restores the magnetic softness of the FeNi layer in the Cu/Ti/FeNi sample. Obtained results can be important for the development of multilayer sensitive elements for giant magnetoimpedance or magnetoresistance detectors.

  19. Photophysical properties of Alq3 thin films

    Science.gov (United States)

    Zawadzka, A.; Płóciennik, P.; Strzelecki, J.; Łukasiak, Z.; Sahraoui, B.

    2013-11-01

    This work contains investigation results of the photophysical properties of aluminum (III) tris(8-hydroxyquinoline) thin films. The Alq3 thin films were successfully fabricated by Physical Vapor Deposition technique. The films were grown on transparent: (quartz and glass) and semiconductor (n-type silica) substrates kept at room temperature during the deposition process. Selected films were annealed after fabrication in ambient atmosphere for 12 h at the temperature equal to 100 °C and 150 °C. Morphology of the films was investigated by AFM technique. Photophysical properties were characterized via photoluminescence, transmission, second and third harmonic generation measurements. The thin films exhibit high structural quality regardless of the annealing process, but the stability of the film can be improved by using an appropriate temperature during the annealing process. Photoluminescence of Alq3 films obtained in air were efficient and stable. The measurements of transmission, SHG and THG spectra allowed us to determine optical constant of the films. We find that the photophysical properties were strictly connected with the morphology and the annealing process significantly changes the structural properties of the films.

  20. Rechargeable lithium batteries based on Li{sub 1+x}V{sub 3}O{sub 8} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bonino, F. [Dept. of Chemistry, Rome Univ. `La Sapienza` (Italy); Panero, S. [Dept. ICMMPM, Rome Univ. `La Sapienza` (Italy); Pasquali, M. [Dept. ICMMPM, Rome Univ. `La Sapienza` (Italy); Pistoia, G. [Centro di Studio per l`Elettrochimica e la Chimica Fisica delle Interfasi, CNR, Rome (Italy)

    1995-08-01

    Low-temperature thin films of Li{sub 1+x}V{sub 3}O{sub 8} have been fabricated and tested in LiClO{sub 4}/propylene carbonate-1,2-dimethoxyethane/Li cells. These cells show very good intercalation kinetics, and at 0.4 C discharge rate produce a specific energy of {approx}110 Wh/kg. The films could be used in microbatteries for electronic devices, and applications requiring more power could also be envisaged. (orig.)

  1. Radial n-i-p structure SiNW-based microcrystalline silicon thin-film solar cells on flexible stainless steel.

    Science.gov (United States)

    Xie, Xiaobing; Zeng, Xiangbo; Yang, Ping; Li, Hao; Li, Jingyan; Zhang, Xiaodong; Wang, Qiming

    2012-11-12

    Radial n-i-p structure silicon nanowire (SiNW)-based microcrystalline silicon thin-film solar cells on stainless steel foil was fabricated by plasma-enhanced chemical vapor deposition. The SiNW solar cell displays very low optical reflectance (approximately 15% on average) over a broad range of wavelengths (400 to 1,100 nm). The initial SiNW-based microcrystalline (μc-Si:H) thin-film solar cell has an open-circuit voltage of 0.37 V, short-circuit current density of 13.36 mA/cm2, fill factor of 0.3, and conversion efficiency of 1.48%. After acid treatment, the performance of the modified SiNW-based μc-Si:H thin-film solar cell has been improved remarkably with an open-circuit voltage of 0.48 V, short-circuit current density of 13.42 mA/cm2, fill factor of 0.35, and conversion efficiency of 2.25%. The external quantum efficiency measurements show that the external quantum efficiency response of SiNW solar cells is improved greatly in the wavelength range of 630 to 900 nm compared to the corresponding planar film solar cells.

  2. Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability.

    Science.gov (United States)

    Kim, Hyun-Suk; Park, Joon Seok; Jeong, Hyun-Kwang; Son, Kyoung Seok; Kim, Tae Sang; Seon, Jong-Baek; Lee, Eunha; Chung, Jae Gwan; Kim, Dae Hwan; Ryu, Myungkwan; Lee, Sang Yoon

    2012-10-24

    A novel method to design metal oxide thin-film transistor (TFT) devices with high performance and high photostability for next-generation flat-panel displays is reported. Here, we developed bilayer metal oxide TFTs, where the front channel consists of indium-zinc-oxide (IZO) and the back channel material on top of it is hafnium-indium-zinc-oxide (HIZO). Density-of-states (DOS)-based modeling and device simulation were performed in order to determine the optimum thickness ratio within the IZO/HIZO stack that results in the best balance between device performance and stability. As a result, respective values of 5 and 40 nm for the IZO and HIZO layers were determined. The TFT devices that were fabricated accordingly exhibited mobility values up to 48 cm(2)/(V s), which is much elevated compared to pure HIZO TFTs (∼13 cm(2)/(V s)) but comparable to pure IZO TFTs (∼59 cm(2)/(V s)). Also, the stability of the bilayer device (-1.18 V) was significantly enhanced compared to the pure IZO device (-9.08 V). Our methodology based on the subgap DOS model and simulation provides an effective way to enhance the device stability while retaining a relatively high mobility, which makes the corresponding devices suitable for ultradefinition, large-area, and high-frame-rate display applications.

  3. Design of thin-film filters for resolution improvements in filter-array based spectrometers using DSP

    Science.gov (United States)

    Lee, Woong-Bi; Kim, Cheolsun; Ju, Gun Wu; Lee, Yong Tak; Lee, Heung-No

    2016-05-01

    Miniature spectrometers have been widely developed in various academic and industrial applications such as bio-medical, chemical and environmental engineering. As a family of spectrometers, optical filter-array based spectrometers fabricated using CMOS or Nano technology provide miniaturization, superior portability and cost effectiveness. In filterarray based spectrometers, the resolution which represents the ability how closely resolve two neighboring spectra, depends on the number of filters and the characteristics of the transmission functions (TFs) of the filters. In practice, due to the small-size and low-cost fabrication, the number of filters is limited and the shape of the TF of each filter is nonideal. As a development of modern digital signal processing (DSP), the spectrometers are equipped with DSP algorithms not only to alleviate distortions due to unexpected noise or interferences among filters but also reconstruct the original signal spectrum. For a high-resolution spectrum reconstruction by the DSP, the TFs of the filters need to be sufficiently uncorrelated with each other. In this paper, we present a design of optical thin-film filters which have the uncorrelated TFs. Each filter consists of multiple layers of high- and low-refractive index materials deposited on a substrate. The proposed design helps the DSP algorithm to improve resolution with a small number of filters. We demonstrate that a resolution of 5 nm within a range from 500 nm to 1100 nm can be achieved with only 64 filters.

  4. Microspot-based ELISA in microfluidics: chemiluminescence and colorimetry detection using integrated thin-film hydrogenated amorphous silicon photodiodes.

    Science.gov (United States)

    Novo, Pedro; Prazeres, Duarte Miguel França; Chu, Virginia; Conde, João Pedro

    2011-12-07

    Microfluidic technology has the potential to decrease the time of analysis and the quantity of sample and reactants required in immunoassays, together with the potential of achieving high sensitivity, multiplexing, and portability. A lab-on-a-chip system was developed and optimized using optical and fluorescence microscopy. Primary antibodies are adsorbed onto the walls of a PDMS-based microchannel via microspotting. This probe antibody is then recognised using secondary FITC or HRP labelled antibodies responsible for providing fluorescence or chemiluminescent and colorimetric signals, respectively. The system incorporated a micron-sized thin-film hydrogenated amorphous silicon photodiode microfabricated on a glass substrate. The primary antibody spots in the PDMS-based microfluidic were precisely aligned with the photodiodes for the direct detection of the antibody-antigen molecular recognition reactions using chemiluminescence and colorimetry. The immunoassay takes ~30 min from assay to the integrated detection. The conditions for probe antibody microspotting and for the flow-through ELISA analysis in the microfluidic format with integrated detection were defined using antibody solutions with concentrations in the nM-μM range. Sequential colorimetric or chemiluminescence detection of specific antibody-antigen molecular recognition was quantitatively detected using the photodiode. Primary antibody surface densities down to 0.182 pmol cm(-2) were detected. Multiplex detection using different microspotted primary antibodies was demonstrated.

  5. Detection of TATP precursor acetone at trace levels using rf sputtered SnO2 thin film-based sensors

    Science.gov (United States)

    Chowdhuri, Arijit; Sharma, Anjali; Gupta, Vinay

    2011-05-01

    Emerging threats of improvised explosive devices (IEDs) and homemade explosives (HMEs) have created a demand for reliable and unambiguous recognition of constituent analytes. Triacetone triperoxide (TATP), a cyclic peroxide based explosive has become a weapon of choice [1] in the hands of resourceful urban insurgents mainly because of ease of manufacture with readily available precursor constituents (acetone and concentrated hydrogen peroxide). Failure of conventional EDDs due to absence of nitrogen compounds coupled with the fact that TATP exhibits no significant absorption in UV region and does not demonstrate fluorescence has confined its detection to IR and Raman spectroscopy besides some enzyme-based tests and mass spectrometry [2]. Hence there is an urgent need for highly sensitive technique with a fast response speed that can detect presence of TATP at extremely low vapour pressure and purposely camouflaged physically or under cross-contamination with interfering compounds. In the present work trace level (20 ppm) acetone (precursor of TATP) sensing characteristics of rf sputtered semiconducting SnO2 thin films having embedded Pt interdigital electrodes have been investigated. Specifically a fast response speed of 08 seconds is noted and sensing characteristics of bare SnO2 and catalyst-SnO2 hetero-structures are compared. Innovative catalyst dispersal technique is shown to enhance sensor response as also reduce response times. Novel sensing hetero-structures with reversible acetone detection capabilities are shown to provide a feasible alternative for real-field operation along with remote detection with limited sample size.

  6. Thin-film crystalline silicon solar cells

    CERN Document Server

    Brendel, Rolf

    2011-01-01

    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  7. Liquid phase deposition of electrochromic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richardson, Thomas J.; Rubin, Michael D.

    2000-08-18

    Thin films of titanium, zirconium and nickel oxides were deposited on conductive SnO2:F glass substrates by immersion in aqueous solutions. The films are transparent, conformal, of uniform thickness and appearance, and adhere strongly to the substrates. On electrochemical cycling, TiO2, mixed TiO2-ZrO2, and NiOx films exhibited stable electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared with films prepared by other non-vacuum techniques. The method is simple, inexpensive, energy efficient, and readily scalable to larger substrates.

  8. Adhesion and friction of thin metal films

    Science.gov (United States)

    Buckley, D. H.

    1976-01-01

    Sliding friction experiments were conducted in vacuum with thin films of titanium, chromium, iron, and platinum sputter deposited on quartz or mica substrates. A single crystal hemispherically tipped gold slider was used in contact with the films at loads of 1.0 to 30.0 and at a sliding velocity of 0.7 mm/min at 23 C. Test results indicate that the friction coefficient is dependent on the adhesion of two interfaces, that between the film and its substrate and the slider and the film. There exists a relationship between the percent d bond character of metals in bulk and in thin film form and the friction coefficient. Oxygen can increase adhesive bonding of a metal film (platinum) to a substrate.

  9. Identification and design of novel polymer-based mechanical transducers: A nano-structural model for thin film indentation

    Energy Technology Data Exchange (ETDEWEB)

    Villanueva, Joshua; Huang, Qian; Sirbuly, Donald J., E-mail: dsirbuly@ucsd.edu [Department of NanoEngineering, University of California San Diego, La Jolla, California 92093 (United States)

    2014-09-14

    Mechanical characterization is important for understanding small-scale systems and developing devices, particularly at the interface of biology, medicine, and nanotechnology. Yet, monitoring sub-surface forces is challenging with current technologies like atomic force microscopes (AFMs) or optical tweezers due to their probe sizes and sophisticated feedback mechanisms. An alternative transducer design relying on the indentation mechanics of a compressible thin polymer would be an ideal system for more compact and versatile probes, facilitating measurements in situ or in vivo. However, application-specific tuning of a polymer's mechanical properties can be burdensome via experimental optimization. Therefore, efficient transducer design requires a fundamental understanding of how synthetic parameters such as the molecular weight and grafting density influence the bulk material properties that determine the force response. In this work, we apply molecular-level polymer scaling laws to a first order elastic foundation model, relating the conformational state of individual polymer chains to the macroscopic compression of thin film systems. A parameter sweep analysis was conducted to observe predicted model trends under various system conditions and to understand how nano-structural elements influence the material stiffness. We validate the model by comparing predicted force profiles to experimental AFM curves for a real polymer system and show that it has reasonable predictive power for initial estimates of the force response, displaying excellent agreement with experimental force curves. We also present an analysis of the force sensitivity of an example transducer system to demonstrate identification of synthetic protocols based on desired mechanical properties. These results highlight the usefulness of this simple model as an aid for the design of a new class of compact and tunable nanomechanical force transducers.

  10. Ammonia gas-sensing characteristics of fluorescence-based poly(2-(acetoacetoxy)ethyl methacrylate) thin films.

    Science.gov (United States)

    He, Jing; Zhang, Tong-Yi; Chen, Guohua

    2012-05-01

    Novel fluorescent poly(2-(acetoacetoxy)ethyl methacrylate)(PAAEMA) latexes have been synthesized by miniemulsion polymerization employing a polymeric costabilizer. Nanoscale aggregates of macromolecules bearing β-dicarbonyl are formed in the prepared latex particles. Ammonia and the β-dicarbonyl aggregates assemble a supramolecular complex, which exhibits strong visible fluorescence under UV light. The formation of the complex is confirmed by the characteristic absorption peak located at about 275 nm in UV-Vis spectra. The absorption spectrum has been found to be applicable for ammonia detection. Atomic Force Microscopy (AFM) studies of surface morphology reveal that gas-sensing properties of the PAAEMA thin films involve the reversible absorption and desorption of ammonia. PAAEMA thin films are sensitive to ammonia gas and have a short response time of 80s when exposed to 54 ppm of ammonia gas concentration.

  11. Photoexcited Carrier Dynamics of Cu2S Thin Films.

    Science.gov (United States)

    Riha, Shannon C; Schaller, Richard D; Gosztola, David J; Wiederrecht, Gary P; Martinson, Alex B F

    2014-11-20

    Copper sulfide is a simple binary material with promising attributes for low-cost thin film photovoltaics. However, stable Cu2S-based device efficiencies approaching 10% free from cadmium have yet to be realized. In this Letter, transient absorption spectroscopy is used to investigate the dynamics of the photoexcited state of isolated Cu2S thin films prepared by atomic layer deposition or vapor-based cation exchange of ZnS. While a number of variables including film thickness, carrier concentration, surface oxidation, and grain boundary passivation were examined, grain structure alone was found to correlate with longer lifetimes. A map of excited state dynamics is deduced from the spectral evolution from 300 fs to 300 μs. Revealing the effects of grain morphology on the photophysical properties of Cu2S is a crucial step toward reaching high efficiencies in operationally stable Cu2S thin film photovoltaics.

  12. Fabrication of hierarchically ordered crystalline titania thin films

    Energy Technology Data Exchange (ETDEWEB)

    Niedermeier, Martin; Kaune, Gunar; Rawolle, Monika; Koerstgens, Volker; Ruderer, Matthias; Mueller-Buschbaum, Peter [TU Muenchen, Physik-Department LS E13, Garching (Germany); Gutmann, Jochen S. [Max-Planck Institute for Polymer Research, Mainz (Germany)

    2010-07-01

    Thin films of nanostructured titania have received a lot of attention in various applications such as photovoltaics within the last years. Having a well defined morphology is crucial for the functionality and performance of these films because it defines the volume to surface ratio and thereby the surface being available for interface reactions. Increasing the total film thickness is a common approach in order to increase the surface area. The present work focuses on the fabrication of hierarchically structured titania thin films and their crystallinity. A layer-by-layer spin-coating approach is investigated. A solution based sol-gel process using diblock copolymers as a template to obtain nanocomposite films is followed by calcination to obtain crystalline titania structures. The obtained structures are investigated using several imaging techniques like SEM and AFM. The crystallinity and the thickness of the films are analyzed with XRD and XRR.

  13. Porous Thin Films Based on Photo-Cross-Linked Star-Shaped Poly(D,L-lactide)s

    Science.gov (United States)

    2007-03-01

    biocompatible and biodegradable polym h as PDLLA, offer potential applications in biosensing and biomedical applications. ST surfaces n ethoxylated ...defined four-arm star-shaped poly(D,L-lactide) (PDLLA) thin films. The four-arm star-shaped PDLLAs were synthesized using an ethoxylated pentaerythritol... ethoxylate . Photoreactive methacrylated end groups were obtained via functionalization of the hydroxyl-terminated star polymers with 2-isocyanatoethyl

  14. An innovative concept of use of redox-active electrolyte in asymmetric capacitor based on MWCNTs/MnO2 and Fe2O3 thin films

    Science.gov (United States)

    Chodankar, Nilesh R.; Dubal, Deepak P.; Lokhande, Abhishek C.; Patil, Amar M.; Kim, Jin H.; Lokhande, Chandrakant D.

    2016-12-01

    In present investigation, we have prepared a nanocomposites of highly porous MnO2 spongy balls and multi-walled carbon nanotubes (MWCNTs) in thin film form and tested in novel redox-active electrolyte (K3[Fe(CN)6] doped aqueous Na2SO4) for supercapacitor application. Briefly, MWCNTs were deposited on stainless steel substrate by “dip and dry” method followed by electrodeposition of MnO2 spongy balls. Further, the supercapacitive properties of these hybrid thin films were evaluated in hybrid electrolyte ((K3[Fe(CN)6 doped aqueous Na2SO4). Thus, this is the first proof-of-design where redox-active electrolyte is applied to MWCNTs/MnO2 hybrid thin films. Impressively, the MWCNTs/MnO2 hybrid film showed a significant improvement in electrochemical performance with maximum specific capacitance of 1012 Fg‑1 at 2 mA cm‑2 current density in redox-active electrolyte, which is 1.5-fold higher than that of conventional electrolyte (Na2SO4). Further, asymmetric capacitor based on MWCNTs/MnO2 hybrid film as positive and Fe2O3 thin film as negative electrode was fabricated and tested in redox-active electrolytes. Strikingly, MWCNTs/MnO2//Fe2O3 asymmetric cell showed an excellent supercapacitive performance with maximum specific capacitance of 226 Fg‑1 and specific energy of 54.39 Wh kg‑1 at specific power of 667 Wkg‑1. Strikingly, actual practical demonstration shows lightning of 567 red LEDs suggesting “ready-to sell” product for industries.

  15. An in-situ real-time optical fiber sensor based on surface plasmon resonance for monitoring the growth of TiO2 thin films.

    Science.gov (United States)

    Tsao, Yu-Chia; Tsai, Woo-Hu; Shih, Wen-Ching; Wu, Mu-Shiang

    2013-07-23

    An optical fiber sensor based on surface plasmon resonance (SPR) is proposed for monitoring the thickness of deposited nano-thin films. A side-polished multimode SPR optical fiber sensor with an 850 nm-LD is used as the transducing element for real-time monitoring of the deposited TiO2 thin films. The SPR optical fiber sensor was installed in the TiO2 sputtering system in order to measure the thickness of the deposited sample during TiO2 deposition. The SPR response declined in real-time in relation to the growth of the thickness of the TiO2 thin film. Our results show the same trend of the SPR response in real-time and in spectra taken before and after deposition. The SPR transmitted intensity changes by approximately 18.76% corresponding to 50 nm of deposited TiO2 thin film. We have shown that optical fiber sensors utilizing SPR have the potential for real-time monitoring of the SPR technology of nanometer film thickness. The compact size of the SPR fiber sensor enables it to be positioned inside the deposition chamber, and it could thus measure the film thickness directly in real-time. This technology also has potential application for monitoring the deposition of other materials. Moreover, in-situ real-time SPR optical fiber sensor technology is in inexpensive, disposable technique that has anti-interference properties, and the potential to enable on-line monitoring and monitoring of organic coatings.

  16. Highly Mass-Sensitive Thin Film Plate Acoustic Resonators (FPAR

    Directory of Open Access Journals (Sweden)

    Ventsislav Yantchev

    2011-07-01

    Full Text Available The mass sensitivity of thin aluminum nitride (AlN film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented.

  17. Synthesis of thin films by the pyrosol process

    Directory of Open Access Journals (Sweden)

    Tucić Aleksandar

    2002-01-01

    Full Text Available Among many aerosol routes, the Pyrosol process, due to its simplicity, low cost and quality of obtained films, represents a promising technique for the synthesis of thin films. The pyrosol process is based on the transport and pyrolysls of an aerosol of processor solution, generated in an ultrasonic atomizer, on a heated substrate. The theoretical principles of the pyrosol process are presented in this paper, as well as the influence of some synthesis parameters on the deposition of SnO2 thin films.

  18. Highly Mass-Sensitive Thin Film Plate Acoustic Resonators (FPAR)

    Science.gov (United States)

    Arapan, Lilia; Alexieva, Gergana; Avramov, Ivan D.; Radeva, Ekaterina; Strashilov, Vesseline; Katardjiev, Ilia; Yantchev, Ventsislav

    2011-01-01

    The mass sensitivity of thin aluminum nitride (AlN) film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO)-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented. PMID:22163994

  19. Highly mass-sensitive thin film plate acoustic resonators (FPAR).

    Science.gov (United States)

    Arapan, Lilia; Alexieva, Gergana; Avramov, Ivan D; Radeva, Ekaterina; Strashilov, Vesseline; Katardjiev, Ilia; Yantchev, Ventsislav

    2011-01-01

    The mass sensitivity of thin aluminum nitride (AlN) film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO)-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented.

  20. Microscale mechanics for metal thin film delamination along ceramic substrates

    Institute of Scientific and Technical Information of China (English)

    魏悦广

    2000-01-01

    The metal thin film delamination along metal/ceramic interface in the case of large scale yielding is studied by employing the strain gradient plasticity theory and the material microscale effects are considered. Two different f racture process models are used in this study to describe the nonlinear delamination phenomena for metal thin films. A set of experiments have been done on the mechanism of copper films delaminating from silica substrates, based on which the peak interface separation stress and the micro-length scale of material, as well as the dislocation-free zone size are predicted.

  1. Microscale mechanics for metal thin film delamination along ceramic substrates

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The metal thin film delamination along metal/ceramic interface in the case of large scale yielding is studied by employing the strain gradient plasticity theory and the material microscale effects are considered.Two different fracture process models are used in this study to describe the nonlinear delamination phenomena for metal thin films.A set of experiments have been done on the mechanism of copper films delaminating from silica substrates,based on which the peak interface separation stress and the micro-length scale of material,as well as the dislocation-free zone size are predicted.

  2. Fabrication of Meso-Porous Sintered Metal Thin Films by Selective Etching of Silica Based Sacrificial Template

    Directory of Open Access Journals (Sweden)

    Ludovic F. Dumee

    2014-08-01

    Full Text Available Meso-porous metal materials have enhanced surface energies offering unique surface properties with potential applications in chemical catalysis, molecular sensing and selective separation. In this paper, commercial 20 nm diameter metal nano-particles, including silver and copper were blended with 7 nm silica nano-particles by shear mixing. The resulted powders were cold-sintered to form dense, hybrid thin films. The sacrificial silica template was then removed by selective etching in 12 wt% hydrofluoric acid solutions for 15 min to reveal a purely metallic meso-porous thin film material. The impact of the initial silica nano-particle diameter (7–20 nm as well as the sintering pressure (5–20 ton·m−2 and etching conditions on the morphology and properties of the final nano-porous thin films were investigated by porometry, pyknometery, gas and liquid permeation and electron microscopy. Furthermore, the morphology of the pores and particle aggregation during shear mixing were assessed through cross-sectioning by focus ion beam milling. It is demonstrated that meso-pores ranging between 50 and 320 nm in average diameter and porosities up to 47% can be successfully formed for the range of materials tested.

  3. Polymer surfaces, interfaces and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stamm, M. [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  4. Thin Ice Films at Mineral Surfaces.

    Science.gov (United States)

    Yeşilbaş, Merve; Boily, Jean-François

    2016-07-21

    Ice films formed at mineral surfaces are of widespread occurrence in nature and are involved in numerous atmospheric and terrestrial processes. In this study, we studied thin ice films at surfaces of 19 synthetic and natural mineral samples of varied structure and composition. These thin films were formed by sublimation of thicker hexagonal ice overlayers mostly produced by freezing wet pastes of mineral particles at -10 and -50 °C. Vibration spectroscopy revealed that thin ice films contained smaller populations of strongly hydrogen-bonded water molecules than in hexagonal ice and liquid water. Thin ice films at the surfaces of the majority of minerals considered in this work [i.e., metal (oxy)(hydr)oxides, phyllosilicates, silicates, volcanic ash, Arizona Test Dust] produced intense O-H stretching bands at ∼3400 cm(-1), attenuated bands at ∼3200 cm(-1), and liquid-water-like bending band at ∼1640 cm(-1) irrespective of structure and composition. Illite, a nonexpandable phyllosilicate, is the only mineral that stabilized a form of ice that was strongly resilient to sublimation in temperatures as low as -50 °C. As mineral-bound thin ice films are the substrates upon which ice grows from water vapor or aqueous solutions, this study provides new constraints from which their natural occurrences can be understood.

  5. Carrier lifetimes in thin-film photovoltaics

    Science.gov (United States)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  6. Efficient water-splitting device based on a bismuth vanadate photoanode and thin-film silicon solar cells.

    Science.gov (United States)

    Han, Lihao; Abdi, Fatwa F; van de Krol, Roel; Liu, Rui; Huang, Zhuangqun; Lewerenz, Hans-Joachim; Dam, Bernard; Zeman, Miro; Smets, Arno H M

    2014-10-01

    A hybrid photovoltaic/photoelectrochemical (PV/PEC) water-splitting device with a benchmark solar-to-hydrogen conversion efficiency of 5.2% under simulated air mass (AM) 1.5 illumination is reported. This cell consists of a gradient-doped tungsten-bismuth vanadate (W:BiVO4 ) photoanode and a thin-film silicon solar cell. The improvement with respect to an earlier cell that also used gradient-doped W:BiVO4 has been achieved by simultaneously introducing a textured substrate to enhance light trapping in the BiVO4 photoanode and further optimization of the W gradient doping profile in the photoanode. Various PV cells have been studied in combination with this BiVO4 photoanode, such as an amorphous silicon (a-Si:H) single junction, an a-Si:H/a-Si:H double junction, and an a-Si:H/nanocrystalline silicon (nc-Si:H) micromorph junction. The highest conversion efficiency, which is also the record efficiency for metal oxide based water-splitting devices, is reached for a tandem system consisting of the optimized W:BiVO4 photoanode and the micromorph (a-Si:H/nc-Si:H) cell. This record efficiency is attributed to the increased performance of the BiVO4 photoanode, which is the limiting factor in this hybrid PEC/PV device, as well as better spectral matching between BiVO4 and the nc-Si:H cell.

  7. Characterization of a smartphone size haptic rendering system based on thin-film AlN actuators on glass substrates

    Science.gov (United States)

    Bernard, F.; Casset, F.; Danel, J. S.; Chappaz, C.; Basrour, S.

    2016-08-01

    This paper presents for the first time the characterization of a smartphone-size haptic rendering system based on the friction modulation effect. According to previous work and finite element modeling, the homogeneous flexural modes are needed to get the haptic feedback effect. The device studied consists of a thin film AlN transducers deposited on an 110  ×  65 mm2 glass substrate. The transducer’s localization on the glass plate allows a transparent central area of 90  ×  49 mm2. Electrical and mechanical parameters of the system are extracted from measurement. From this extraction, the electrical impedance matching reduced the applied voltage to 17.5 V AC and the power consumption to 1.53 W at the resonance frequency of the vibrating system to reach the haptic rendering specification. Transient characterizations of the actuation highlight a delay under the dynamic tactile detection. The characterization of the AlN transducers used as sensors, including the noise rejection, the delay or the output charge amplitude allows detections with high accuracy of any variation due to external influences. Those specifications are the first step to a low-power-consumption feedback-looped system.

  8. Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer.

    Science.gov (United States)

    Xu, Wenya; Dou, Junyan; Zhao, Jianwen; Tan, Hongwei; Ye, Jun; Tange, Masayoshi; Gao, Wei; Xu, Weiwei; Zhang, Xiang; Guo, Wenrui; Ma, Changqi; Okazaki, Toshiya; Zhang, Kai; Cui, Zheng

    2016-02-28

    Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (±2 V) and subthreshold swing (SS) (122-161 mV dec(-1)), high effective mobility (up to 17.6-37.7 cm(2) V(-1) s(-1)) and high on/off ratio (10(4)-10(7)). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.

  9. Enhanced Sensitivity of Gas Sensor Based on Poly(3-hexylthiophene Thin-Film Transistors for Disease Diagnosis and Environment Monitoring

    Directory of Open Access Journals (Sweden)

    Marco R. Cavallari

    2015-04-01

    Full Text Available Electronic devices based on organic thin-film transistors (OTFT have the potential to supply the demand for portable and low-cost gadgets, mainly as sensors for in situ disease diagnosis and environment monitoring. For that reason, poly(3-hexylthiophene (P3HT as the active layer in the widely-used bottom-gate/bottom-contact OTFT structure was deposited over highly-doped silicon substrates covered with thermally-grown oxide to detect vapor-phase compounds. A ten-fold organochloride and ammonia sensitivity compared to bare sensors corroborated the application of this semiconducting polymer in sensors. Furthermore, P3HT TFTs presented approximately three-order higher normalized sensitivity than any chemical sensor addressed herein. The results demonstrate that while TFTs respond linearly at the lowest concentration values herein, chemical sensors present such an operating regime mostly above 2000 ppm. Simultaneous alteration of charge carrier mobility and threshold voltage is responsible for pushing the detection limit down to units of ppm of ammonia, as well as tens of ppm of alcohol or ketones. Nevertheless, P3HT transistors and chemical sensors could compose an electronic nose operated at room temperature for a wide range concentration evaluation (1–10,000 ppm of gaseous analytes. Targeted analytes include not only biomarkers for diseases, such as uremia, cirrhosis, lung cancer and diabetes, but also gases for environment monitoring in food, cosmetic and microelectronics industries.

  10. Label-free attomolar detection of lactate based on radio frequency sputtered of nickel oxide thin film field effect transistor.

    Science.gov (United States)

    Mansouri Majd, Samira; Salimi, Abdollah; Astinchap, Bandar

    2017-06-15

    The radio frequency sputtered nickel oxide thin film nanostrtablucture deposited on glass substrate was used as a potential matrix for the realization of highly sensitive and selective field effect transistor-type lactate biosensor. Firstly, NiO-FET was tested for NADH detection showing a linear concentration range 1aM to 1nM and a low detection limit of 0.2aM. Then, NiO surface modified with chitosan and functionalized with glutaraldehyde and lactate dehydrogenase enzyme was immobilized on the aldehyde terminal. The biosensor is found to exhibit highly efficient sensing response characteristics with good linearity of 1aM to 1pM and low limit of detection of 0.5aM. The biosensor shows high stability without interferences from commonly interfering compounds in biological fluids, including uric acid, ascorbic acid, glucose and acetaminophen. Furthermore, the application of the proposed biosensor for analysis of lactate in artificial serum samples was evaluated with good satisfactory results. This protocol can be used to develop of disposable, low cost, and portable various types of dehydrogenase based biosensor devices using metal oxide nanomaterials.

  11. Study of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye

    2005-01-01

    A new thin film pulse transformer for using in ISND and model systems is fabricated by a mask sputtering process. This novel pulse transformer consists of four I-shaped CoZrRe nanometer crystal magnetic-film cores and a Cu thin film coil, deposited on the micro-crystal glass substrate directly. The thickness of thin film core is between 1 and 3 μm, and the area is between 4mm×6 mm and 12mm×6 mm. The coils provide a relatively high induce of 0.8 μm and can be well operated in a frequency range of 0.001~20 MHz.

  12. Magnetoelectric thin film composites with interdigital electrodes

    Science.gov (United States)

    Piorra, A.; Jahns, R.; Teliban, I.; Gugat, J. L.; Gerken, M.; Knöchel, R.; Quandt, E.

    2013-07-01

    Magnetoelectric (ME) thin film composites on silicon cantilevers are fabricated using Pb(Zr0.52Ti0.45)O3 (PZT) films with interdigital transducer electrodes on the top side and FeCoSiB amorphous magnetostrictive thin films on the backside. These composites without any direct interface between the piezoelectric and magnetostrictive phase are superior to conventional plate capacitor-type thin film ME composites. A limit of detection of 2.6 pT/Hz1/2 at the mechanical resonance is determined which corresponds to an improvement of a factor of approximately 2.8 compared to the best plate type sensor using AlN as the piezoelectric phase and even a factor of approximately 4 for a PZT plate capacitor.

  13. Tungsten-doped thin film materials

    Science.gov (United States)

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  14. N- and P-channel transport behavior in thin film transistors based on tricyanovinyl-capped oligothiophenes.

    Science.gov (United States)

    Cai, Xiuyu; Burand, Michael W; Newman, Christopher R; da Silva Filho, Demetrio A; Pappenfus, Ted M; Bader, Mamoun M; Brédas, Jean-Luc; Mann, Kent R; Frisbie, C Daniel

    2006-08-03

    We report the structural and electrical characterization of thin films of organic semiconductor molecules consisting of an oligothiophene core capped with electron-withdrawing tricyanovinyl (TCV) groups. X-ray diffraction and atomic force microscopy of evaporated films of three different TCV-capped oligothiophenes showed that the films were highly crystalline. Electrical transport was measured in thin film transistors employing silver source and drain contacts and channel probes to correct for contact resistance. Three compounds exhibited n-channel (electron) conduction consistent with cyclic voltametry data that indicated they undergo facile reduction. Maximum electron mobilities were 0.02 cm2/V.s with an on/off current ratio of 10(6). A fourth end-capped molecule, TCV-6T-TCV, which had six thiophene rings, exhibited both p- and n-channel transport. Overall, these results confirm that substitution of oligothiophene cores with electron-withdrawing groups is a useful strategy to achieve electron-transporting materials.

  15. Microstructural characterization, optical and photocatalytic properties of bilayered CuO and ZnO based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Pizá-Ruiz, P.; Solís-Canto, O.; Ornelas-Gutiérrez, C.; Pérez-García, S.; Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx

    2014-12-05

    Highlights: • High quality bilayered Zn–Cu oxide thin films were deposited by aerosol assisted CVD. • Detailed microstructural characterization was performed by XRD and electron microscopy. • Absorbance of bilayered films shows a shift of absorption edge toward visible region. • Optical band gap or nearly 3.2 and 2 eV was determined for ZnO and Cu oxide. • High photocatalytic activity around 90% was obtained for bilayered samples. - Abstract: In this work, it is presented the synthesis, microstructural characterization and photocatalytic properties of bilayered CuO–ZnO/ZnO thin films onto borosilicate glass and fused silica substrates. The films were deposited by aerosol assisted chemical vapor deposition, using an experimental setup reported elsewhere. Deposition conditions were optimized to get high quality films; i.e. they were structurally uniform, highly transparent, non-light scattering, homogeneous, and well adhered to the substrate. Different Cu/Zn atomic ratios were tried for the upper layer. The microstructure of the films was characterized by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy. GIXRD results indicate the presence of ZnO Wurzite and Cu oxide phases. Results of SEM and HRTEM analysis of the cross sectional microstructure showed that the films were composed of compact and dense layers with no visible evidence of an interfacial boundary or porosity. Optical absorbance of the bilayered films showed a clear shift of the absorption toward the visible range. Optical band gap was determined roughly at 3.2 and 2 eV for ZnO and Cu oxide, respectively. Photocatalytic activity of the samples, for the degradation of a 10{sup −5} mol dm{sup −3} solution of methylene blue (MB), was determined after 120 and 240 min of irradiation with an UV-A source. Around 90% of MB degradation was reached by bilayered films with

  16. Monte Carlo simulations of biaxial structure in thin hybrid nematic film based upon spatially anisotropic pair potential

    Institute of Scientific and Technical Information of China (English)

    Zhang Zhi-Dong; Chang Chun-Rui; Ma Dong-Lai

    2009-01-01

    Hybrid nematic films have been studied by Monte Carlo simulations using a lattice spin model,in which the pair potential is spatially anisotropic and dependent on elastic constants of liquid crystals.We confirm in the thin hybrid nematic film the existence of a biaxially nonbent structure and the structarc transition from the biaxial to the bent-director structure,which is similar to the result obtained using the Lebwohl-Lasher model.However,the step-like director's profile,characteristic for the biaxial structure,is spatially asymmetric in the film because the pair potential leads to K1≠K3.We estimate the upper cell thickness to be 69 spin layers,in which the biaxial structure can be found.

  17. Improved Biomolecular Thin-Film Sensor based on Plasmon Waveguide Resonance

    Science.gov (United States)

    Byard, Courtney; Aslan, Mustafa; Mendes, Sergio

    2009-05-01

    The design, fabrication, and characterization of a plasmon waveguide resonance (PWR) sensor are presented. Glass substrates are coated with a 35 nm gold film using electron beam evaporation, and then covered with a 143 nm aluminum oxide waveguide using an atomic layer deposition process, creating a smooth, highly transparent dielectric film. When probed in the Kretschmann configuration, the structure allows for an efficient conversion of an incident optical beam into a surface wave, which is mainly confined in the dielectric layer and exhibits a deep and narrow angular resonance. The performance (reflectance vs. incidence angle in TE polarization) is modeled using a transfer-matrix approach implemented into a Mathematica code. Our simulations and experimental data are compared with that of surface plasmon resonance (SPR) sensor using the same criteria. We show that the resolution of PWR is approximately ten times better than SPR, opening opportunities for more sensitive studies in various applications including research in protein interactions, pharmaceutical drug development, and food analysis.

  18. Modeling and Optimization of Advanced Single- and Multijunction Solar Cells Based on Thin-Film a-Si:H/SiGe Heterostructure

    OpenAIRE

    Peyman Jelodarian; Abdolnabi Kosarian

    2011-01-01

    In amorphous thin-film p-i-n solar cell, a thick absorber layer can absorb more light to generate carriers. On the other hand, a thin i-layer cannot absorb enough light. Thickness of the i-layer is a key parameter that can limit the performance of solar cell. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. Especially, current density of the cell can be enhanced without deteriorating its open circuit voltage, due to th...

  19. Thin Films for Advanced Glazing Applications

    Directory of Open Access Journals (Sweden)

    Ann-Louise Anderson

    2016-09-01

    Full Text Available Functional thin films provide many opportunities for advanced glazing systems. This can be achieved by adding additional functionalities such as self-cleaning or power generation, or alternately by providing energy demand reduction through the management or modulation of solar heat gain or blackbody radiation using spectrally selective films or chromogenic materials. Self-cleaning materials have been generating increasing interest for the past two decades. They may be based on hydrophobic or hydrophilic systems and are often inspired by nature, for example hydrophobic systems based on mimicking the lotus leaf. These materials help to maintain the aesthetic properties of the building, help to maintain a comfortable working environment and in the case of photocatalytic materials, may provide external pollutant remediation. Power generation through window coatings is a relatively new idea and is based around the use of semi-transparent solar cells as windows. In this fashion, energy can be generated whilst also absorbing some solar heat. There is also the possibility, in the case of dye sensitized solar cells, to tune the coloration of the window that provides unheralded external aesthetic possibilities. Materials and coatings for energy demand reduction is highly desirable in an increasingly energy intensive world. We discuss new developments with low emissivity coatings as the need to replace scarce indium becomes more apparent. We go on to discuss thermochromic systems based on vanadium dioxide films. Such systems are dynamic in nature and present a more sophisticated and potentially more beneficial approach to reducing energy demand than static systems such as low emissivity and solar control coatings. The ability to be able to tune some of the material parameters in order to optimize the film performance for a given climate provides exciting opportunities for future technologies. In this article, we review recent progress and challenges in

  20. Junction formation in CuInSe{sub 2}-based thin-film devices

    Energy Technology Data Exchange (ETDEWEB)

    Ramanathan, K.; Wiesner, H.; Asher, S.; Bhattacharya, R.N.; Keane, J.; Contreras, M.A.; Noufi, R. [National Center for Photovoltaics, National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

    1999-03-01

    The nature of the interface between CuInSe{sub 2} (CIS) and the chemical bath deposited CdS layer has been investigated. We show that heat-treating the absorbers in Cd- or Zn-containing solutions in the presence of ammonium hydroxide sets up a chemical reaction which facilitates an extraction of Cu from the lattice and an in-diffusion of Cd. The characteristics of devices made in this manner suggest that the reaction generates a thin, n-doped region in the absorber. It is quite possible that the CdS/CuInSe{sub 2} device is a buried, shallow junction with a CdS window layer, rather than a heterojunction. We have used these ideas to develop methods for fabricating devices without CdS or Cd. A 14.2{percent} efficiency ZnO/CIGS device was obtained through aqueous treatment in Zn solutions. {copyright} {ital 1999 American Institute of Physics.}