Glomerular endothelial surface layer acts as a barrier against albumin filtration

NARCIS (Netherlands)

Dane, M.J.; Berg, B.M. van den; Avramut, M.C.; Faas, F.G.; Vlag, J. van der; Rops, A.L.; Ravelli, R.B.; Koster, B.J.; Zonneveld, A.J. van; Vink, H.; Rabelink, T.J.

2013-01-01

Glomerular endothelium is highly fenestrated, and its contribution to glomerular barrier function is the subject of debate. In recent years, a polysaccharide-rich endothelial surface layer (ESL) has been postulated to act as a filtration barrier for large molecules, such as albumin. To test this

A high performance ceria based interdiffusion barrier layer prepared by spin-coating

DEFF Research Database (Denmark)

Plonczak, Pawel; Joost, Mario; Hjelm, Johan

2011-01-01

A multiple spin-coating deposition procedure of Ce0.9Gd0.1O1.95 (CGO) for application in solid oxide fuel cells (SOFCs) was developed. The thin and dense CGO layer can be employed as a barrier layer between yttria stabilised zirconia (YSZ) electrolyte and a (La, Sr)(Co, Fe)O3 based cathode....... The decomposition of the polymer precursor used in the spin-coating process was studied. The depositions were performed on anode supported half cells. By controlling the sintering temperature between each spin-coating process, dense and crack-free CGO films with a thickness of approximately 1 μm were obtained....... The successive steps of dense layer production was investigated by scanning electron microscopy. X-ray diffraction was employed to monitor the crystal structure of the CGO layer sintered at different temperatures. The described spin coated barrier layer was evaluated using an anode supported cell...

Electroless deposition of NiCrB diffusion barrier layer film for ULSI-Cu metallization

Energy Technology Data Exchange (ETDEWEB)

Wang, Yuechun [School of Materials Science and Engineering, Yunnan University, Kunming (China); Chen, Xiuhua, E-mail: chenxh@ynu.edu.cn [School of Materials Science and Engineering, Yunnan University, Kunming (China); Ma, Wenhui [National Engineering Laboratory of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming (China); Shang, Yudong; Lei, Zhengtao; Xiang, Fuwei [School of Materials Science and Engineering, Yunnan University, Kunming (China)

2017-02-28

Highlights: • In this paper, the electroless deposited NiCrB thin film was mainly in the form of NiB, CrB{sub 2} compounds and elementary Ni. • The sheet resistance of NiCrB thin film was 3.043 Ω/□, it is smaller than that of the widely used Ta, TaN and TiN diffusion barrier layers. • Annealing experiments showed that the failure temperature of NiCrB thin film regarding Cu diffusion was 900 °C. • NiCrB barrier layer crystallized after 900 °C annealing, Cu grains arrived at Si-substrate through grain boundaries, resulting in the formation of Cu{sub 3}Si. • Eelectroless deposited NiCrB film also had good oxidation resistance, it is expected to become an anti-oxidant layer of copper interconnection. - Abstract: NiCrB films were deposited on Si substrates using electroless deposition as a diffusion barrier layer for Cu interconnections. Samples of the prepared NiCrB/SiO{sub 2}/Si and NiCrB/Cu/NiCrB/SiO{sub 2}/Si were annealed at temperatures ranging from 500 °C to 900 °C. The reaction mechanism of the electroless deposition of the NiCrB film, the failure temperature and the failure mechanism of the NiCrB diffusion barrier layer were investigated. The prepared samples were subjected to XRD, XPS, FPP and AFM to determine the phases, composition, sheet resistance and surface morphology of samples before and after annealing. The results of these analyses indicated that the failure temperature of the NiCrB barrier film was 900 °C and the failure mechanism led to crystallization and grain growth of the NiCrB barrier layer after high temperature annealing. It was found that this process caused Cu grains to reach Si substrate through the grain boundaries, and then the reaction between Cu and Si resulted in the formation of highly resistive Cu{sub 3}Si.

Atomic layer deposition on polymer based flexible packaging materials: Growth characteristics and diffusion barrier properties

International Nuclear Information System (INIS)

Kaeaeriaeinen, Tommi O.; Maydannik, Philipp; Cameron, David C.; Lahtinen, Kimmo; Johansson, Petri; Kuusipalo, Jurkka

2011-01-01

One of the most promising areas for the industrial application of atomic layer deposition (ALD) is for gas barrier layers on polymers. In this work, a packaging material system with improved diffusion barrier properties has been developed and studied by applying ALD on flexible polymer based packaging materials. Nanometer scale metal oxide films have been applied to polymer-coated papers and their diffusion barrier properties have been studied by means of water vapor and oxygen transmission rates. The materials for the study were constructed in two stages: the paper was firstly extrusion coated with polymer film, which was then followed by the ALD deposition of oxide layer. The polymers used as extrusion coatings were polypropylene, low and high density polyethylene, polylactide and polyethylene terephthalate. Water vapor transmission rates (WVTRs) were measured according to method SCAN-P 22:68 and oxygen transmission rates (O 2 TRs) according to a standard ASTM D 3985. According to the results a 10 nm oxide layer already decreased the oxygen transmission by a factor of 10 compared to uncoated material. WVTR with 40 nm ALD layer was better than the level currently required for most common dry flexible packaging applications. When the oxide layer thickness was increased to 100 nm and above, the measured WVTRs were limited by the measurement set up. Using an ALD layer allowed the polymer thickness on flexible packaging materials to be reduced. Once the ALD layer was 40 nm thick, WVTRs and O 2 TRs were no longer dependent on polymer layer thickness. Thus, nanometer scale ALD oxide layers have shown their feasibility as high quality diffusion barriers on flexible packaging materials.

Atomic layer deposition on polymer based flexible packaging materials: Growth characteristics and diffusion barrier properties

Energy Technology Data Exchange (ETDEWEB)

Kaeaeriaeinen, Tommi O., E-mail: tommi.kaariainen@lut.f [ASTRaL, Lappeenranta University of Technology, Prikaatinkatu 3 E, 50100 Mikkeli (Finland); Maydannik, Philipp, E-mail: philipp.maydannik@lut.f [ASTRaL, Lappeenranta University of Technology, Prikaatinkatu 3 E, 50100 Mikkeli (Finland); Cameron, David C., E-mail: david.cameron@lut.f [ASTRaL, Lappeenranta University of Technology, Prikaatinkatu 3 E, 50100 Mikkeli (Finland); Lahtinen, Kimmo, E-mail: kimmo.lahtinen@tut.f [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 541, 33101 Tampere (Finland); Johansson, Petri, E-mail: petri.johansson@tut.f [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 541, 33101 Tampere (Finland); Kuusipalo, Jurkka, E-mail: jurkka.kuusipalo@tut.f [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 541, 33101 Tampere (Finland)

2011-03-01

One of the most promising areas for the industrial application of atomic layer deposition (ALD) is for gas barrier layers on polymers. In this work, a packaging material system with improved diffusion barrier properties has been developed and studied by applying ALD on flexible polymer based packaging materials. Nanometer scale metal oxide films have been applied to polymer-coated papers and their diffusion barrier properties have been studied by means of water vapor and oxygen transmission rates. The materials for the study were constructed in two stages: the paper was firstly extrusion coated with polymer film, which was then followed by the ALD deposition of oxide layer. The polymers used as extrusion coatings were polypropylene, low and high density polyethylene, polylactide and polyethylene terephthalate. Water vapor transmission rates (WVTRs) were measured according to method SCAN-P 22:68 and oxygen transmission rates (O{sub 2}TRs) according to a standard ASTM D 3985. According to the results a 10 nm oxide layer already decreased the oxygen transmission by a factor of 10 compared to uncoated material. WVTR with 40 nm ALD layer was better than the level currently required for most common dry flexible packaging applications. When the oxide layer thickness was increased to 100 nm and above, the measured WVTRs were limited by the measurement set up. Using an ALD layer allowed the polymer thickness on flexible packaging materials to be reduced. Once the ALD layer was 40 nm thick, WVTRs and O{sub 2}TRs were no longer dependent on polymer layer thickness. Thus, nanometer scale ALD oxide layers have shown their feasibility as high quality diffusion barriers on flexible packaging materials.

Analysis of chemical dissolution of the barrier layer of porous oxide on aluminum thin films using a re-anodizing technique

Energy Technology Data Exchange (ETDEWEB)

Vrublevsky, I. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus)]. E-mail: nil-4-2@bsuir.edu.by; Parkoun, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Sokol, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Schreckenbach, J. [Institut fuer Chemie, Technische Universitaet Chemnitz, Chemnitz D-09107 (Germany)

2005-09-30

Chemical dissolution of the barrier layer of porous oxide formed on thin aluminum films (99.9% purity) in the 4% oxalic acid after immersion in 2 mol dm{sup -3} sulphuric acid at 50 deg. C has been studied. The barrier layer thickness before and after dissolution was calculated using a re-anodizing technique. It has been shown that above 57 V the change in the growth mechanism of porous alumina films takes place. As a result, the change in the amount of regions in the barrier oxide with different dissolution rates is observed. The barrier oxide contains two layers at 50 V: the outer layer with the highest dissolution rate and the inner layer with a low dissolution rate. Above 60 V the barrier oxide contains three layers: the outer layer with a high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with a low dissolution rate. We suggest that the formation of the outer layer of barrier oxide with a high dissolution rate is linked with the injection of protons or H{sub 3}O{sup +} ions from the electrolyte into the oxide film at the anodizing voltages above 57 V.

Development of Barrier Layers for the Protection of Candidate Alloys in the VHTR

Energy Technology Data Exchange (ETDEWEB)

Levi, Carlos G. [Battelle Energy Alliance, LLC, Idaho Falls, ID (United States); Jones, J. Wayne [Battelle Energy Alliance, LLC, Idaho Falls, ID (United States); Pollock, Tresa M. [Battelle Energy Alliance, LLC, Idaho Falls, ID (United States); Was, Gary S. [Battelle Energy Alliance, LLC, Idaho Falls, ID (United States)

2015-01-22

The objective of this project was to develop concepts for barrier layers that enable leading candi- date Ni alloys to meet the longer term operating temperature and durability requirements of the VHTR. The concepts were based on alpha alumina as a primary surface barrier, underlay by one or more chemically distinct alloy layers that would promote and sustain the formation of the pro- tective scale. The surface layers must possess stable microstructures that provide resistance to oxidation, de-carburization and/or carburization, as well as durability against relevant forms of thermo-mechanical cycling. The system must also have a self-healing ability to allow endurance for long exposure times at temperatures up to 1000°C.

Composition, structure and electrical properties of alumina barrier layers grown in fluoride-containing oxalic acid solutions

Energy Technology Data Exchange (ETDEWEB)

Jagminas, A. [Institute of Chemistry, A. Gostauto 9, LT-01108 Vilnius (Lithuania)], E-mail: jagmin@ktl.mii.lt; Vrublevsky, I. [Department of Microelectricals, Belarusian State University of Informatics and Radioelectricals, 6 Brovka Street, Minsk 220013 (Belarus); Kuzmarskyte, J.; Jasulaitiene, V. [Institute of Chemistry, A. Gostauto 9, LT-01108 Vilnius (Lithuania)

2008-04-15

The composition, structure and electrical properties of alumina barrier layers grown by anodic oxidation in F{sup -}-containing (FC) and F{sup -}-free (FF) oxalic acid solutions were studied using the re-anodizing/dissolution technique, Fourier-transformed infrared and X-ray photoelectron spectroscopy. These results confirmed formation in FC anodizing solutions of films structurally different from ones grown in FF oxalic acid baths. It was found that the barrier layer of FC alumina films is composed of two layers differing in the dissolution rate. These differences are related to the formation in the FC electrolyte of a barrier layer composed of a more microporous outer part and a thin, non-porous and non-scalloped inner part consisting of aluminum oxide and aluminum fluoride.

Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT

Science.gov (United States)

Majumdar, Shubhankar; Das, S.; Biswas, D.

2015-08-01

Impact on DC characteristics of InGaN/AlGaN/GaN HEMT due to variation in the hetero-structure parameters i.e. molar fraction of Al and thickness of AlGaN barrier layer is presented in this paper. Gate controllability over the channel is dependent on barrier layer thickness, and molar fraction has an impact on band offset and 2DEG, which further affects the current. HEMT device that is simulated in SILVACO has InGaN cap layer of 2 nm thickness with 15% In molar fraction, variation of Al percentage and thickness of the AlGaN barrier layer are taken as 15-45% and 5-20nm, respectively. A tremendous change in threshold voltage (Vth), maximum transconductance (Gmmax) and subthreshold swing is found due to variation in hetero-structure parameter of barrier layer and the values are typically 1.3-0.1 V, 0.6-0.44 S/mm and 75-135 mV/dec respectively.

Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer

KAUST Repository

Brennan, Thomas P.; Trejo, Orlando; Roelofs, Katherine E.; Xu, John; Prinz, Fritz B.; Bent, Stacey F.

2013-01-01

Atomic layer deposition (ALD) was used to grow both PbS quantum dots and Al2O3 barrier layers in a solid-state quantum dot-sensitized solar cell (QDSSC). Barrier layers grown prior to quantum dots resulted in a near-doubling of device efficiency (0.30% to 0.57%) whereas barrier layers grown after quantum dots did not improve efficiency, indicating the importance of quantum dots in recombination processes. © 2013 The Royal Society of Chemistry.

Comparison of some coating techniques to fabricate barrier layers on packaging materials

Energy Technology Data Exchange (ETDEWEB)

Hirvikorpi, Terhi, E-mail: terhi.hirvikorpi@vtt.f [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Vaehae-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.f [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Harlin, Ali, E-mail: ali.harlin@vtt.f [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Karppinen, Maarit, E-mail: maarit.karppinen@tkk.f [Laboratory of Inorganic Chemistry, Department of Chemistry, Aalto University School of Science and Technology, Kemistintie 1, P.O. Box 16100, FI-00076 AALTO (Finland)

2010-07-30

Atomic layer deposition (ALD), electron beam evaporation, magnetron sputtering and a sol-gel method were used to deposit thin aluminum oxide coatings onto two different fiber-based packaging materials of commercial board grades coated with synthetic and biodegradable polymers. Significant decreases in both the water vapor and oxygen permeation rates were observed. With each technique the barrier performance was improved. However, among the techniques tested ALD was found to be most suitable. Our results moreover revealed that biodegradable polylactic acid-coated paperboard with a 25-nm thick layer of aluminum oxide grown by ALD on top of it showed promising barrier characteristics against water vapor and oxygen.

Comparison of some coating techniques to fabricate barrier layers on packaging materials

International Nuclear Information System (INIS)

Hirvikorpi, Terhi; Vaehae-Nissi, Mika; Harlin, Ali; Karppinen, Maarit

2010-01-01

Atomic layer deposition (ALD), electron beam evaporation, magnetron sputtering and a sol-gel method were used to deposit thin aluminum oxide coatings onto two different fiber-based packaging materials of commercial board grades coated with synthetic and biodegradable polymers. Significant decreases in both the water vapor and oxygen permeation rates were observed. With each technique the barrier performance was improved. However, among the techniques tested ALD was found to be most suitable. Our results moreover revealed that biodegradable polylactic acid-coated paperboard with a 25-nm thick layer of aluminum oxide grown by ALD on top of it showed promising barrier characteristics against water vapor and oxygen.

Investigation of Top/Bottom electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Pedersen, Thomas; Thomsen, Erik Vilain

2008-01-01

Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(ZrxTi1 - x)O3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process...... with a line width down to 3 μ m. A 700 nm thick ZrO2 layer as insolating diffusion barrier layer is found to be insufficient as barrier layer for PZT on a silicon substrate sintered at 850°C. EDX shows diffusion of Si into the PZT layer....

Effect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells

KAUST Repository

Roelofs, Katherine E.

2013-03-21

Despite the promise of quantum dots (QDs) as a light-absorbing material to replace the dye in dye-sensitized solar cells, quantum dot-sensitized solar cell (QDSSC) efficiencies remain low, due in part to high rates of recombination. In this article, we demonstrate that ultrathin recombination barrier layers of Al2O3 deposited by atomic layer deposition can improve the performance of cadmium sulfide (CdS) quantum dot-sensitized solar cells with spiro-OMeTAD as the solid-state hole transport material. We explored depositing the Al2O3 barrier layers either before or after the QDs, resulting in TiO2/Al2O3/QD and TiO 2/QD/Al2O3 configurations. The effects of barrier layer configuration and thickness were tracked through current-voltage measurements of device performance and transient photovoltage measurements of electron lifetimes. The Al2O3 layers were found to suppress dark current and increase electron lifetimes with increasing Al 2O3 thickness in both configurations. For thin barrier layers, gains in open-circuit voltage and concomitant increases in efficiency were observed, although at greater thicknesses, losses in photocurrent caused net decreases in efficiency. A close comparison of the electron lifetimes in TiO2 in the TiO2/Al2O3/QD and TiO2/QD/Al2O3 configurations suggests that electron transfer from TiO2 to spiro-OMeTAD is a major source of recombination in ss-QDSSCs, though recombination of TiO2 electrons with oxidized QDs can also limit electron lifetimes, particularly if the regeneration of oxidized QDs is hindered by a too-thick coating of the barrier layer. © 2013 American Chemical Society.

Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers

DEFF Research Database (Denmark)

Zhukov, Alexey E.; Kryzhanovskaya, Natalia V.; Zubov, Fedor I.

2012-01-01

We fabricated and tested a quantum well laser with asymmetric barrier layers. Such a laser has been proposed earlier to suppress bipolar carrier population in the optical confinement layer and thus to improve temperature-stability of the threshold current. As compared to the conventional reference...

Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Golnaz Karbasian

2017-03-01

Full Text Available Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.

Observed seasonal variability of barrier layer in the Bay of Bengal

Digital Repository Service at National Institute of Oceanography (India)

Pankajakshan, T.; Muraleedharan, P.M.; Rao, R.R.; Somayajulu, Y.K.; Reddy, G.V.; Revichandran, C.

The observed formation of Barrier Layer (BL) and the seasonal variability of BL thickness (BLT) in the Bay of Bengal are examined utilizing the most comprehensive data set. Thick BL (~50m) first appears in the coastal region of the northeastern bay...

Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Liu Zi-Yang; Zhang Jin-Cheng; Duan Huan-Tao; Xue Jun-Shuai; Lin Zhi-Yu; Ma Jun-Cai; Xue Xiao-Yong; Hao Yue

2011-01-01

The strain relaxation of an AlGaN barrier layer may be influenced by a thin cap layer above, and affects the transport properties of AlGaN/GaN heterostructures. Compared with the slight strain relaxation found in AlGaN barrier layer without cap layer, it is found that a thin cap layer can induce considerable changes of strain state in the AlGaN barrier layer. The degree of relaxation of the AlGaN layer significantly influences the transport properties of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is observed that electron mobility decreases with the increasing degree of relaxation of the AlGaN barrier, which is believed to be the main cause of the deterioration of crystalline quality and morphology on the AlGaN/GaN interface. On the other hand, both GaN and AlN cap layers lead to a decrease in 2DEG density. The reduction of 2DEG caused by the GaN cap layer may be attributed to the additional negative polarization charges formed at the interface between GaN and AlGaN, while the reduction of the piezoelectric effect in the AlGaN layer results in the decrease of 2DEG density in the case of AlN cap layer. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Effect of barrier layers on the properties of indium tin oxide thin films on soda lime glass substrates

International Nuclear Information System (INIS)

Lee, Jung-Min; Choi, Byung-Hyun; Ji, Mi-Jung; An, Yong-Tae; Park, Jung-Ho; Kwon, Jae-Hong; Ju, Byeong-Kwon

2009-01-01

In this paper, the electrical, structural and optical properties of indium tin oxide (ITO) films deposited on soda lime glass (SLG) haven been investigated, along with high strain point glass (HSPG) substrate, through radio frequency magnetron sputtering using a ceramic target (In 2 O 3 :SnO 2 , 90:10 wt.%). The ITO films deposited on the SLG show a high electrical resistivity and structural defects compared with those deposited on HSPG due to the Na ions from the SLG diffusing to the ITO film by annealing. However, these properties can be improved by intercalating a barrier layer of SiO 2 or Al 2 O 3 between the ITO film and the SLG substrate. SIMS analysis has confirmed that the barrier layer inhibits the Na ion's diffusion from the SLG. In particular, the ITO films deposited on the Al 2 O 3 barrier layer, show better properties than those deposited on the SiO 2 barrier layer.

Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

Energy Technology Data Exchange (ETDEWEB)

Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent (Belgium); Schaekers, Marc [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Blasco, Nicolas [Air Liquide Electronics US, L.P., 46401 Landing Parkway, Fremont, California 94538 (United States)

2013-03-18

Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

Suitability of polystyrene as a functional barrier layer in coloured food contact materials.

Science.gov (United States)

Genualdi, Susan; Addo Ntim, Susana; Begley, Timothy

2015-01-01

Functional barriers in food contact materials (FCMs) are used to prevent or reduce migration from inner layers in multilayer structures to food. The effectiveness of functional barrier layers was investigated in coloured polystyrene (PS) bowls due to their intended condition of use with hot liquids such as soups or stew. Migration experiments were performed over a 10-day period using USFDA-recommended food simulants (10% ethanol, 50% ethanol, corn oil and Miglyol) along with several other food oils. At the end of the 10 days, solvent dyes had migrated from the PS bowls at 12, 1 and 31,000 ng cm(-)(2) into coconut oil, palm kernel oil and Miglyol respectively, and in coconut oil and Miglyol the colour change was visible to the human eye. Scanning electron microscope (SEM) images revealed that the functional barrier was no longer intact for the bowls exposed to coconut oil, palm kernel oil, Miglyol, 10% ethanol, 50% ethanol and goat's milk. Additional tests showed that 1-dodecanol, a lauryl alcohol derived from palm kernel oil and coconut oil, was present in the PS bowls at an average concentration of 11 mg kg(-1). This compound is likely to have been used as a dispersing agent for the solvent dye and aided the migration of the solvent dye from the PS bowl into the food simulant. The solvent dye was not found in the 10% ethanol, 50% ethanol and goat's milk food simulants above their respective limits of detection, which is likely to be due to its insolubility in aqueous solutions. A disrupted barrier layer is of concern because if there are unregulated materials in the inner layers of the laminate, they may migrate to food, and therefore be considered unapproved food additives resulting in the food being deemed adulterated under the Federal Food Drug and Cosmetic Act.

Multilayer moisture barrier

Science.gov (United States)

Pankow, Joel W; Jorgensen, Gary J; Terwilliger, Kent M; Glick, Stephen H; Isomaki, Nora; Harkonen, Kari; Turkulainen, Tommy

2015-04-21

A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al.sub.2O.sub.3, AlSiO.sub.x, TiO.sub.2, and an Al.sub.2O.sub.3/TiO.sub.2 laminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiO.sub.xN.sub.y film.

Effect of barrier layers in burnthrough experiments with 351-nm laser illumination

International Nuclear Information System (INIS)

Delettrez, J.; Bradley, D.K.; Jaanimagi, P.A.; Verdon, C.P.

1990-01-01

The time-resolved x-ray emission is measured from spherical targets consisting of glass shells overcoated with plastic in which thin signature layers are embedded. These targets are illuminated at 351 nm by the 24-beam OMEGA laser system at the Laboratory for Laser Energetics of the University of Rochester. We measure a large burnthrough rate for bare plastic targets that can only be replicated in one-dimensional hydrodynamic simulations with laser intensities in excess of ten times the nominal intensity. We observe that the burnthrough times are affected by the presence of a thin outer coating (barrier layer). The burnthrough times depend strongly on the barrier-layer material and thickness, whereas one-dimensional simulation results predict only a small effect. Several processes are considered to explain these results: illumination nonuniformity, early shinethrough of the laser light through the plastic, prepulses, filamentation, self-focusing of hot spots, and the Rayleigh-Taylor instability. We conclude that mixing due to the Rayleigh-Taylor instability, enhanced by early shinethrough, is the most probable cause of the observed large burnthrough rates

Comparative study of Ta, TaN and Ta/TaN bi-layer barriers for Cu-ultra low-k porous polymer integration

International Nuclear Information System (INIS)

Yang, L.Y.; Zhang, D.H.; Li, C.Y.; Foo, P.D.

2004-01-01

Tantalum (Ta), TaN and bilayer Ta/TaN barriers deposited on ultra-low-k porous polymer (ULKPP) and the thermal stability of their structures are comparatively investigated using various techniques. The Ta/ultra-low-k polymer shows the smallest sheet resistance, but the poorest thermal stability, while TaN on the ultra-low-k polymer shows the highest resistance but the best thermal stability. The bi-layer Ta/TaN barrier takes the advantage of both Ta and TaN barriers and gives reasonable resistance and thermal stability. The electrical tests indicate that the Cu lines with the TaN and bi-layer Ta/TaN barriers exhibit the smaller leakage current and higher breakdown voltage compared with the Cu lines with the Ta barrier. The better thermal stability of the TaN and the bi-layer Ta/TaN barriers is mainly due to the amorphous/nanostructure and less grain boundaries of the barriers. In addition, the texture discontinuity at the Ta/TaN interfaces in the bi-layers barrier also plays an important role in reducing mutual diffusion of Ta atoms in the Ta barrier and some atoms in the ultra-low-k porous polymer

Effect of nanodimensional polyethylenimine layer on surface potential barriers of hybrid structures based on silicon single crystal

Science.gov (United States)

Malyar, Ivan V.; Gorin, Dmitry A.; Stetsyura, Svetlana V.

2013-01-01

In this report we present the analysis of I-V curves for MIS-structures like silicon substrate / nanodimensional polyelectrolyte layer / metal probe (contact) which is promising for biosensors, microfluidic chips, different devices of molecular electronics, such as OLEDs, solar cells, where polyelectrolyte layers can be used to modify semiconductor surface. The research is directed to investigate the contact phenomena which influence the resulting signal of devices mentioned above. The comparison of I-V characteristics of such structures measured by scanning tunnel microscopy (contactless technique) and using contact areas deposited by thermal evaporation onto the organic layer (the contact one) was carried out. The photoassisted I-V measurements and complex analysis based on Simmons and Schottky models allow one to extract the potential barriers and to observe the changes of charge transport in MIS-structures under illumination and after polyelectrolyte adsorption. The direct correlation between the thickness of the deposited polyelectrolyte layer and both equilibrium tunnel barrier and Schottky barrier height was observed for hybrid structures with polyethylenimine. The possibility of control over the I-V curves of hybrid structure and the height of the potential barriers (for different charge transports) by illumination was confirmed. Based on experimental data and complex analysis the band diagrams were plotted which illustrate the changes of potential barriers for MIS-structures due to the polyelectrolyte adsorption and under the illumination.

Barium diffusion in metallo-organic solution deposited barrier layers and Y1Ba2Cu3O7-x films

International Nuclear Information System (INIS)

Lipeles, R.A.; Leung, M.S.; Thiede, D.A.

1990-01-01

This paper reports on barium silicate and barium aluminate films that were studied for use as chemical reaction and diffusion barrier layers for Y 1 Ba 2 Cu 3 O 7-x (YBC) deposited on sapphire and fused silica substrates by the sol-gel technique. Depth profiling by secondary ion mass spectrometry (SIMS) was used to characterize the abruptness of the interfaces between the barrier layer and the YBC film as well as the barrier layer and the substrate. The authors found that barium aluminate films reacted with fused silica substrates forming a coarse-grained barium silicate phase. Barium silicate, BaSiO 3 , also reacted with silica substrates forming a broad, amorphous reaction zone containing some BaSi 2 O 5 . Although barium silicate and barium aluminate deposited on sapphire formed a BaAl 12 O 19 phase, they provided a barrier to barium diffusion from sol-gel deposited YBC. Crystalline barium aluminate grown on c-cut sapphire was the most effective barrier layer for the growth of YBC films; compositionally uniform YBC films were made similar to that grown on strontium titanate substrates. These data show that chemically stable, crystalline films are more effective barrier layers than amorphous films

Waves propagating over a two-layer porous barrier on a seabed

Science.gov (United States)

Lin, Qiang; Meng, Qing-rui; Lu, Dong-qiang

2018-05-01

A research of wave propagation over a two-layer porous barrier, each layer of which is with different values of porosity and friction, is conducted with a theoretical model in the frame of linear potential flow theory. The model is more appropriate when the seabed consists of two different properties, such as rocks and breakwaters. It is assumed that the fluid is inviscid and incompressible and the motion is irrotational. The wave numbers in the porous region are complex ones, which are related to the decaying and propagating behaviors of wave modes. With the aid of the eigenfunction expansions, a new inner product of the eigenfunctions in the two-layer porous region is proposed to simplify the calculation. The eigenfunctions, under this new definition, possess the orthogonality from which the expansion coefficients can be easily deduced. Selecting the optimum truncation of the series, we derive a closed system of simultaneous linear equations for the same number of the unknown reflection and transmission coefficients. The effects of several physical parameters, including the porosity, friction, width, and depth of the porous barrier, on the dispersion relation, reflection and transmission coefficients are discussed in detail through the graphical representations of the solutions. It is concluded that these parameters have certain impacts on the reflection and transmission energy.

Thermal shock behavior of toughened gadolinium zirconate/YSZ double-ceramic-layered thermal barrier coating

International Nuclear Information System (INIS)

Zhong, Xinghua; Zhao, Huayu; Zhou, Xiaming; Liu, Chenguang; Wang, Liang; Shao, Fang; Yang, Kai; Tao, Shunyan; Ding, Chuanxian

2014-01-01

Highlights: • Gd 2 Zr 2 O 7 /YSZ DCL thermal barrier coating was designed and fabricated. • The Gd 2 Zr 2 O 7 top ceramic layer was toughened by addition of nanostructured 3YSZ. • Remarkable improvement in thermal shock resistance of the DCL coating was achieved. - Abstract: Double-ceramic-layered (DCL) thermal barrier coating system comprising of toughened Gadolinium zirconate (Gd 2 Zr 2 O 7 , GZ) as the top ceramic layer and 4.5 mol% Y 2 O 3 partially-stabilized ZrO 2 (4.5YSZ) as the bottom ceramic layer was fabricated by plasma spraying and thermal shock behavior of the DCL coating was investigated. The GZ top ceramic layer was toughened by addition of nanostructured 3 mol% Y 2 O 3 partially-stabilized ZrO 2 (3YSZ) to improve fracture toughness of the matrix. The thermal shock resistance of the DCL coating was enhanced significantly compared to that of single-ceramic-layered (SCL) GZ-3YSZ composite coating, which is believed to be primarily attributed to the two factors: (i) the increase in fracture toughness of the top ceramic layer by incorporating nanostructured YSZ particles and (ii) the improvement in strain tolerance through the utilization of 4.5YSZ as the bottom ceramic layer. In addition, the failure mechanisms are mainly attributed to the still low fracture toughness of the top ceramic layer and oxidation of the bond-coat

Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature

International Nuclear Information System (INIS)

Ohmori, Hideto; Hatori, Tomoya; Nakagawa, Shigeki

2008-01-01

MgO (100) textured films can be prepared by reactive facing targets sputtering at room temperature without postdeposition annealing process when they were deposited on (100) oriented Fe buffer layers. This method allows fabrication of perpendicular magnetic tunnel junction (p-MTJ) with MgO (100) tunneling barrier layer and rare-earth transition metal (RE-TM) alloy thin films as perpendicularly magnetized free and pinned layers. The 3-nm-thick MgO tunneling barrier layer in p-MTJ multilayer prepared on glass substrate revealed (100) crystalline orientation. Extraordinary Hall effect measurement clarified that the perpendicular magnetic components of 3-nm-thick Fe buffer layers on the two ends of MgO tunneling barrier layer were increased by exchange coupling with RE-TM alloy layers. The RA of 35 kΩ μm 2 and tunneling magnetoresistance ratio of 64% was observed in the multilayered p-MTJ element by current-in-plane-tunneling

Modelling of migration from multi-layers and functional barriers: Estimation of parameters

NARCIS (Netherlands)

Dole, P.; Voulzatis, Y.; Vitrac, O.; Reynier, A.; Hankemeier, T.; Aucejo, S.; Feigenbaum, A.

2006-01-01

Functional barriers form parts of multi-layer packaging materials, which are deemed to protect the food from migration of a broad range of contaminants, e.g. those associated with reused packaging. Often, neither the presence nor the identity of the contaminants is known, so that safety assessment

Morphological instability of Ag films caused by phase transition in the underlying Ta barrier layer

Energy Technology Data Exchange (ETDEWEB)

Mardani, Shabnam, E-mail: shabnam.mardani@angstrom.uu.se; Vallin, Örjan; Wätjen, Jörn Timo; Norström, Hans; Olsson, Jörgen; Zhang, Shi-Li, E-mail: shili.zhang@angstrom.uu.se [Solid State Electronics, The Ångström Laboratory, Uppsala University, P.O. Box 534, SE-75121 (Sweden)

2014-08-18

Wide-bandgap (WBG) semiconductor technologies are maturing and may provide increased device performance in many fields of applications, such as high-temperature electronics. However, there are still issues regarding the stability and reliability of WBG devices. Of particular importance is the high-temperature stability of interconnects for electronic systems based on WBG-semiconductors. For metallization without proper encapsulation, morphological degradation can occur at elevated temperatures. Sandwiching Ag films between Ta and/or TaN layers in this study is found to be electrically and morphologically stabilize the Ag metallization up to 800 °C, compared to 600 °C for uncapped films. However, the barrier layer plays a key role and TaN is found to be superior to Ta, resulting in the best achieved stability, whereas the difference between Ta and TaN caps is negligible. The β-to-α phase transition in the underlying Ta barrier layer is identified as the major cause responsible for the morphological instability observed above 600 °C. It is shown that this phase transition can be avoided using a stacked Ta/TaN barrier.

Diffusion barrier and adhesion properties of SiO(x)N(y) and SiO(x) layers between Ag/polypyrrole composites and Si substrates.

Science.gov (United States)

Horváth, Barbara; Kawakita, Jin; Chikyow, Toyohiro

2014-06-25

This paper describes the interface reactions and diffusion between silver/polypyrrole (Ag/PPy) composite and silicon substrate. This composite material can be used as a novel technique for 3D-LSI (large-scale integration) by the fast infilling of through-silicon vias (TSV). By immersion of the silicon wafer with via holes into the dispersed solution of Ag/PPy composite, the holes are filled with the composite. It is important to develop a layer between the composite and the Si substrate with good diffusion barrier and adhesion characteristics. In this paper, SiOx and two types of SiOxNy barrier layers with various thicknesses were investigated. The interface structure between the Si substrate, the barrier, and the Ag/PPy composite was characterized by transmission electron microscopy. The adhesion and diffusion properties of the layers were established for Ag/PPy composite. Increasing thickness of SiOx proved to permit less Ag to transport into the Si substrate. SiOxNy barrier layers showed very good diffusion barrier characteristics; however, their adhesion depended strongly on their composition. A barrier layer composition with good adhesion and Ag barrier properties has been identified in this paper. These results are useful for filling conductive metal/polymer composites into TSV.

Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

Science.gov (United States)

Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

2018-02-01

To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.

Micro-fabricated Liquid Encapsulated Energy Harvester with Polymer Barrier Layer as Liquid Electret Interface

International Nuclear Information System (INIS)

Bu, L; Xu, H Y; Xu, B J; Song, L

2014-01-01

This paper addresses the electret discharge issue for liquid based electret energy harvesters. An interface structure of PDMS/PTFE polymer barrier layer between liquid and electrets is introduced, achieving 75% charge retain rate over 100h, compared with 0% without the proposed layer over 100h. Further, the PDMS/PTFE layer is introduced into liquid encapsulated energy harvester (LEEH) and is compatible with micro-fabrication process. The retain rate of device voltage is about 47%∼65% over 100h. At 100h after corona charging, the device generates maximally 3.7V, 0.55μW @1Hz rotation

On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

International Nuclear Information System (INIS)

Zhukov, A. E.; Asryan, L. V.; Semenova, E. S.; Zubov, F. I.; Kryzhanovskaya, N. V.; Maximov, M. V.

2015-01-01

Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds (In 0.232 Al 0.594 Ga 0.174 As/Al 0.355 Ga 0.645 As) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution

Structural properties of ultraviolet cured polysilazane gas barrier layers on polymer substrates

International Nuclear Information System (INIS)

Morlier, Arnaud; Cros, Stéphane; Garandet, Jean-Paul; Alberola, Nicole

2014-01-01

Perhydropolysilazane (PHPS) conversion to silica through high energy ultraviolet irradiation has been studied. Precursor conversion speed and structural properties of the UV cured PHPS have been investigated and showed that this conversion method is fast but that complete conversion into silica is not achieved in an oxygen depleted atmosphere for layer thicknesses higher than 30 nm, resulting in a composite structure with concentration gradients. We further show that Fourier transform infrared spectroscopy data allow investigating the local structure and composition over the depth of the obtained layers. Gas permeability of the thin UV cured PHPS layers deposited on polymers has been studied. We used a high sensitivity permeation measurement technique to determine water vapor and oxygen permeabilities of the barrier layers and show the correlation between helium, oxygen and water permeability of these materials. Oxygen and water vapor transmission rates of respectively 0.06 cm 3 /m 2 /day/bar and 0.2 g/m 2 /day have been obtained with layers deposited on a polymer substrate. - Highlights: • Perhydropolysilazane has been converted into dense layers by vacuum UV irradiation. • Cured perhydropolysilazane layers have an inhomogeneous structure. • The cured material consists in 3 spontaneously formed layers. • Oxygen and water transmission rates of 0.06 cm 3 /m 2 /day/bar and 0.02 g/m 2 /day are reached

Promoting Barrier Performance and Cathodic Protection of Zinc-Rich Epoxy Primer via Single-Layer Graphene

Directory of Open Access Journals (Sweden)

Jingrong Liu

2018-05-01

Full Text Available The effect of single-layer graphene sheets (Gr on the corrosion protection of zinc-rich epoxy primers (ZRPs was investigated. Scanning electron microscopy (SEM with an energy dispersive spectrometer (EDS were used to characterize morphology and composition of the coatings after immersion for 25 days. The cross-sectional SEM images and X-ray photoelectron spectroscopy (XPS confirmed that the addition of single-layer graphene facilitated assembling of zinc oxides on the interface between the coating and the steel. The open circuit potential (OCP, electrochemical impedance spectroscopy (EIS measurements revealed that both the cathodic protection and barrier performance of the ZRP were enhanced after addition of 0.6 wt. % Gr (Gr0.6-ZRP. In addition, the cathodic protection property of the Gr0.6-ZRP was characterized quantitatively by localized electrochemical impedance spectroscopy (LEIS in the presence of an artificial scratch on the coating. The results demonstrate that moderate amounts of single-layer graphene can significantly improve corrosion resistance of ZRP, due to the barrier protection and cathodic protection effects.

Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors

Science.gov (United States)

Qiu, Dongri; Kim, Eun Kyu

2015-09-01

We fabricated multi-layered graphene/MoS2 heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2 onto Au metal pads on a SiO2/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2 junction devices for systematic comparison. A previous work has demonstrated the existence of a positive Schottky barrier height (SBH) in the metal/MoS2 system. However, analysis of the SBH indicates that the contacts of the multi-layered graphene/MoS2 have tunable negative barriers in the range of 300 to -46 meV as a function of gate voltage. It is hypothesized that this tunable SBH is responsible for the modulation of the work function of the thick graphene in these devices. Despite the large number of graphene layers, it is possible to form ohmic contacts, which will provide new opportunities for the engineering of highly efficient contacts in flexible electronics and photonics.

Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors.

Science.gov (United States)

Qiu, Dongri; Kim, Eun Kyu

2015-09-03

We fabricated multi-layered graphene/MoS2 heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2 onto Au metal pads on a SiO2/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2 junction devices for systematic comparison. A previous work has demonstrated the existence of a positive Schottky barrier height (SBH) in the metal/MoS2 system. However, analysis of the SBH indicates that the contacts of the multi-layered graphene/MoS2 have tunable negative barriers in the range of 300 to -46 meV as a function of gate voltage. It is hypothesized that this tunable SBH is responsible for the modulation of the work function of the thick graphene in these devices. Despite the large number of graphene layers, it is possible to form ohmic contacts, which will provide new opportunities for the engineering of highly efficient contacts in flexible electronics and photonics.

Heterogeneous reactions of dioctahedral smectites in illite-smectite and kaolinite-smectite mixed-layers: applications to clay materials for engineered barriers

International Nuclear Information System (INIS)

Meunier, A.; Proust, D.; Beaufort, D.; Lajudie, A.; Petit, J.-C.

1992-01-01

The clay materials selected for use in the engineered barriers of the French nuclear waste isolation programme are mainly composed of dioctahedral smectite, either bentonite of Wyoming type or kaolinite-smectites most often consist of randomly stacked layers with low and high charges. In the case of the Wyoming-type bentonite, these two differently charged layers do not react in the same way when subjected to hydrothermal alteration. Overall, the low-charge smectite layers react to form high-charge smectite layers + quartz + kaolinite. Then, fixing K ions, the high-charge smectite layers are transformed into illite-smectite mixed-layers (I/S) when the temperature conditions increase. A symmetrical process is observed in natural or experimental hydrothermal conditions when the high-charge smectite layers of I/S minerals react with quartz and/or kaolinite to produce low-charge smectite layers. The chemical properties of the bentonite-engineered barriers clearly depend on the low charge/high charge smectite layer proportion, which is in turn controlled by the temperature-dependent reactions in the vicinity of the waste disposal. Although there are fewer published data on the kaolinite-smectite mixed-layered minerals (K/S), a similar low charge-high charge reaction appears to affect their smectite component. The experimental alteration of K/S leads to the formation of a low-charge beidellite with an increase in the cation-exchange capacity and in the expandability of the clay material. Thus, the properties of the engineered barrier seems to be improved after hydrothermal alteration. (Author)

Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene

Energy Technology Data Exchange (ETDEWEB)

Anugrah, Yoska; Robbins, Matthew C.; Koester, Steven J. [Department of Electrical and Computer Engineering, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455 (United States); Crowell, Paul A. [School of Physics and Astronomy, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455 (United States)

2015-03-09

Phosphorene, the 2D analogue of black phosphorus, is a promising material for studying spin transport due to its low spin-orbit coupling and its ½ nuclear spin, which could allow the study of hyperfine effects. In this work, the properties of permalloy (Py) and cobalt (Co) contacts to few-layer phosphorene are presented. The Schottky barrier height was extracted and determined as a function of gate bias. Flat-band barrier heights, relative to the valence band edge, of 110 meV and 200 meV were determined for Py and Co, respectively. These results are important for future studies of spin transport in phosphorene.

Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

Science.gov (United States)

Tari, Alireza; Wong, William S.

2018-02-01

Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.

Low frequency noise in asymmetric double barrier magnetic tunnel junctions with a top thin MgO layer

International Nuclear Information System (INIS)

Guo Hui-Qiang; Tang Wei-Yue; Liu Liang; Wei Jian; Li Da-Lai; Feng Jia-Feng; Han Xiu-Feng

2015-01-01

Low frequency noise has been investigated at room temperature for asymmetric double barrier magnetic tunnel junctions (DBMTJs), where the coupling between the top and middle CoFeB layers is antiferromagnetic with a 0.8-nm thin top MgO barrier of the CoFeB/MgO/CoFe/CoFeB/MgO/CoFeB DBMTJ. At enough large bias, 1/f noise dominates the voltage noise power spectra in the low frequency region, and is conventionally characterized by the Hooge parameter α mag . With increasing external field, the top and bottom ferromagnetic layers are aligned by the field, and then the middle free layer rotates from antiparallel state (antiferromagnetic coupling between top and middle ferromagnetic layers) to parallel state. In this rotation process α mag and magnetoresistance-sensitivity-product show a linear dependence, consistent with the fluctuation dissipation relation. With the magnetic field applied at different angles (θ) to the easy axis of the free layer, the linear dependence persists while the intercept of the linear fit satisfies a cos(θ) dependence, similar to that for the magnetoresistance, suggesting intrinsic relation between magnetic losses and magnetoresistance. (rapid communication)

Spray pyrolysis of doped-ceria barrier layers for solid oxide fuel cells

DEFF Research Database (Denmark)

Szymczewska, Dagmara; Chrzan, Aleksander; Karczewski, Jakub

2017-01-01

Gadolinium doped ceria (Ce0.8Gd0.2O2 − x-CGO) layer fabricated by spray pyrolysis is investigated as the diffusion barrier for solid oxide fuel cell. It is deposited between the La0.6Sr0.4FeO3 − δ cathode and the yttria stabilized zirconia electrolyte to mitigate harmful interdiffusion...

Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

International Nuclear Information System (INIS)

Yim, H.I.; Lee, S.Y.; Hwang, J.Y.; Rhee, J.R.; Chun, B.S.; Wang, K.L.; Kim, Y.K.; Kim, T.W.; Lee, S.S.; Hwang, D.G.

2008-01-01

Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer 10/AlO x /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Thermal barrier coatings with a double-layer bond coat on Ni{sub 3}Al based single-crystal superalloy

Energy Technology Data Exchange (ETDEWEB)

Zhou, Xin [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Xu, Zhenhua; Mu, Rende [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); He, Limin, E-mail: he_limin@yahoo.com [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Huang, Guanghong [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Cao, Xueqiang, E-mail: xcao@ciac.ac.cn [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

2014-04-05

Highlights: • Thermal barrier coatings with a double-layer bond coat of (Ni,Pt)Al and NiCrAlYSi. • Good adherence at all interfaces within TBC system. • The underlying (Ni,Pt)Al layer can supply abundant Al content for the upper NiCrAlYSi layer. • Crack nucleation, propagation and coalescence lead to the failure of coating. -- Abstract: Electron-beam physical vapor deposited thermal barrier coatings (TBCs) with a double-layer bond coat of (Ni,Pt)Al and NiCrAlYSi were prepared on a Ni{sub 3}Al based single-crystal superalloy. Phase and cross-sectional microstructure of the developed coatings were studied by using X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The experimental results show good adherence at all interfaces within this system. Furthermore, oxidation resistance and elements interdiffusion behavior of the double-layer bond coat were also investigated. The double-layer bond coat system exhibits a better scale adherence than the single layer bond coat systems since the underlying (Ni,Pt)Al layer can supply abundant Al for the upper NiCrAlYSi layer. Finally, thermal cycling behavior of the double-layer bond coat TBC was evaluated and the failure mechanism was discussed. Crack nucleation, propagation and coalescence caused by TGO growth stress and the thermal expansion mismatch stress between TGO and bond coat can be mainly responsible for the spallation of this coating.

Photovoltaic performance of bithiazole-bridged dyes-sensitized solar cells employing semiconducting quantum dot CuInS2 as barrier layer material.

Science.gov (United States)

Guo, Fuling; He, Jinxiang; Li, Jing; Wu, Wenjun; Hang, Yandi; Hua, Jianli

2013-10-15

In this work, the quantum dot CuInS2 layer was deposited on TiO2 film using successive ionic layer absorption and reaction (SILAR) method, and then two bithiazole-bridged dyes (BTF and BTB) were sensitized on the CuInS2/TiO2 films to form dye/CuInS2/TiO2 photoanodes for DSSCs. It was found that the quantum dots CuInS2 as an energy barrier layer not only could effectively improve open-circuit voltage (Voc) of solar cell, but also increase short-circuit photocurrent (Jsc) compared to the large decrease in Jsc of ZnO as energy barrier layer. The electrochemical impedance spectroscopy (EIS) measurement showed that the CuInS2 formed a barrier layer to suppress the recombination from injection electron to the electrolyte and improve open-circuit voltage. Finally, the open-circuit voltage increased about 22 and 27mV for BTF and BTB-/CuInS2/TiO2-based cells, the overall conversion efficiencies also reached to 7.20% and 6.74%, respectively. Copyright © 2013 Elsevier Inc. All rights reserved.

Characterisation of NdFeB thin films prepared on (100)Si substrates with SiO2 barrier layers

International Nuclear Information System (INIS)

Sood, D.K.; Muralidhar, G.K.

1998-01-01

This work presents a systematic study of the deposition and characterization of NdFeB films on substrates of Si(100) and of SiO2 layer thermally grown on Si(100) held at RT, 360 deg C or 440 deg C. The post-deposition annealing is performed at 600 or 800 deg C in vacuum. The films are characterised using the analytical techniques of RBS, SIMS, XRD, OM and SEM. Results indicate that SiO2 is, in deed, an excellent diffusion barrier layer till 600 deg C but becomes relatively less effective at 800 deg C. Without this barrier layer, interdiffusion at the Si-NdFeB film interface leads to formation of iron silicides, α-Fe and B exclusion from the diffusion zone, in competition with the formation of the magnetic NdFeB phase. (authors)

Ultra-fine structures of Pd-Ag-HAp nanoparticle deposition on protruded TiO2 barrier layer for dental implant

Science.gov (United States)

Jang, Jae-Myung; Kim, Seung-Dai; Park, Tae-Eon; Choe, Han-Cheol

2018-02-01

The biocompatibility structure of an implant surface is of great importance to the formation of new bone tissue around the dental implant and also has a significant chemical reaction in the osseointegration process. Thus, ultra-fine Pd-Ag-HAp nanoparticles have been electrodeposited on protruded TiO2 barrier layer in mixed electrolyte solutions. Unusual protrusions patterns, which are assigned to Pd-Ag-HAp nanoparticles, can be clearly differentiated from a TiO2 nanotube oxide layer formed by an anodizing process. In the chemical bonding state, the surface characteristics of Pd/Ag/HAp compounds have been investigated by FE-SEM, EDS mapping analysis, and XPS analysis. The mapping dots of the elements including Ti, Ca, Pd, Ag, and P showed a homogeneous distribution throughout the entire surface when deposited onto the protruded TiO2 barrier layer. The XPS spectra of Ti-2p, O-1S, Pd-3d, and Ag-3d have been investigated, with the major XPS peak indicating Pd-3d. The Ag-3d level was clearly observed with further scanning of the Ca-2p region. Based on the results of the chemical states, the structural properties of the protrusion patterns were also examined after being deposited onto the barrier oxide film, resulting in the representative protrusion patterns being mainly composed of Pd-Ag-HAp compounds. The results of the soaking evaluation showed that the protrusion patterns and the protruded TiO2 barrier layer were all effective in regards to biocompatibility.

The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells

Science.gov (United States)

Xing, Yao; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing; Liu, Wei; Liang, Feng; Liu, Shuangtao; Zhang, Liqun; Wang, Wenjie; Li, Mo; Zhang, Yuantao; Du, Guotong

2018-05-01

In InGaN/GaN multi-quantum wells (MQWs), a low temperature cap (LT-cap) layer is grown between the InGaN well layer and low temperature GaN barrier layer. During the growth, a temperature ramp-up and ramp-down process is added between LT-cap and barrier layer growth. The effect of temperature ramp-up time duration on structural and optical properties of quantum wells is studied. It is found that as the ramp-up time increases, the Indium floating layer on the top of the well layer can be diminished effectively, leading to a better interface quality between well and barrier layers, and the carrier localization effect is enhanced, thereby the internal quantum efficiency (IQE) of QWs increases surprisingly. However, if the ramp-up time is too long, the carrier localization effect is weaker, which may increase the probabilities of carriers to meet with nonradiative recombination centers. Meanwhile, more nonradiative recombination centers will be introduced into well layers due to the indium evaporation. Both of them will lead to a reduction of internal quantum efficiency (IQE) of MQWs.

Effects of a Chitosan Coating Layer on the Surface Properties and Barrier Properties of Kraft Paper

Directory of Open Access Journals (Sweden)

Shanhui Wang

2016-01-01

Full Text Available Biodegradable chitosan can be applied as a coating on the surface of kraft paper in order to improve its barrier properties against water vapor and air. The food packaging industry can benefit from the addition of chitosan to its current packaging, and in turn reduce pollution from plastic packaging plants. This paper discusses the film formation of chitosan, the permeability of paper coated with a chitosan layer, and the influence on the paper’s surface and barrier properties under different process conditions. SEM (scanning electron microscope, AFM (atomic force microscope, ATR-FTIR (Fourier transmission infrared spectroscope with attenuated total reflection, and PDA (penetration dynamics analysis were used to analyze the properties of chitosan’s film formation and permeability. A controlled experiment showed that the chitosan layer was smoother than the surface of the uncoated kraft paper, had better film formation, and that there was no chitosan penetration through the kraft paper. The barrier properties against water vapor were strongest when there was a higher concentration of chitosan solution at the optimum pH, stirring speed, and those with a thicker coating on the kraft paper.

The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers

DEFF Research Database (Denmark)

Zubov, F. I.; Zhukov, A. E.; Shernyakov, Yu M.

2015-01-01

Current-voltage and light-current characteristics of quantum-well lasers have been studied at high drive currents. The introduction of asymmetric barrier layers adjacent to the active region caused a significant suppression of the nonlinearity in the light-current characteristic and an increase...

Salinity-induced mixed and barrier layers in the southwestern tropical Atlantic Ocean off the northeast of Brazil

Directory of Open Access Journals (Sweden)

M. Araujo

2011-01-01

Full Text Available High-resolution hydrographic observations of temperature and salinity are used to analyze the formation and distribution of isothermal depth (Z_T, mixed depth (Z_M and barrier layer thickness (BLT in a section of the southwestern Atlantic (0°30´ N–14°00´ S; 31°24´–41°48´ W, adjacent to the northeastern Brazilian coast. Analyzed data consists of 279 CTD casts acquired during two cruises under the Brazilian REVIZEE Program. One occurred in late austral winter (August–October 1995 and another in austral summer (January–April 1997. Oceanic observations are compared to numerical modeling results obtained from the French Mercator-Coriolis Program. Results indicate that the intrusion of subtropical Salinity Maximum Waters (SMW is the major process contributing to the seasonal barrier layer formation. These waters are brought by the South Equatorial Current (SEC, from the subtropical region, into the western tropical Atlantic boundary. During late austral winter southeastern trade winds are more intense and ITCZ precipitations induce lower surface salinity values near the equator. During this period a 5–90 m thick BLT (median = 15 m is observed and BLT > 30 m is restricted to latitudes higher than 8° S, where the intrusion of salty waters between 8°–12.3° S creates shallow mixed layers over deep (Z_T ≥ 90 m isothermal layers. During austral summer, shallow isothermal and mixed layers prevail, when northeasterly winds are predominant and evaporation overcomes precipitation, causing saltier waters at the surface/subsurface layers. During that period observed BLT varies from 5 to 70 m and presents thicker median value of 35 m, when comparing to the winter. Furthermore, BLT ≥ 30 m is observed not only in the southernmost part of the study area, as verified during late winter, but in the latitude range 2°–14° S, where near-surface salty waters are transported westward by the

Functional Two-Dimensional Coordination Polymeric Layer as a Charge Barrier in Li–S Batteries

KAUST Repository

Huang, Jing-Kai

2018-01-04

Ultrathin two-dimensional (2D) polymeric layers are capable of separating gases and molecules based on the reported size exclusion mechanism. What is equally important but missing today is an exploration of the 2D layers with charge functionality, which enables applications using the charge exclusion principle. This work demonstrates a simple and scalable method of synthesizing a free-standing 2D coordination polymer Zn2(benzimidazolate)2(OH)2 at the air–water interface. The hydroxyl (−OH) groups are stoichiometrically coordinated and implement electrostatic charges in the 2D structures, providing powerful functionality as a charge barrier. Electrochemical performance of the Li–S battery shows that the Zn2(benzimidazolate)2(OH)2 coordination polymer layers efficiently mitigate the polysulfide shuttling effects and largely enhance the battery capacity and cycle performance. The synthesis of the proposed coordination polymeric layers is simple, scalable, cost saving, and promising for practical use in batteries.

Enhancement of seeding for electroless Cu plating of metallic barrier layers by using alkyl self-assembled monolayers

Energy Technology Data Exchange (ETDEWEB)

Chen, Sung-Te [Department of Electronic Engineering, Hsiuping University of Science and Technology, Dali 412, Taichung, Taiwan (China); Chung, Yu-Cheng [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China); Fang, Jau-Shiung [Department of Materials Science and Engineering, National Formosa University, Huwei 632, Taiwan (China); Cheng, Yi-Lung [Department of Electrical Engineering, National Chi-Nan University, Puli, Nantou 545, Taiwan (China); Chen, Giin-Shan, E-mail: gschen@fcu.edu.tw [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China)

2017-05-31

Highlights: • Ta barrier layers are used as model substrates for seeding of electroless plating. • Ta layers seeded with Ta-OH yield seeds with limited density and large size (>10 nm). • Substantial improvement of seeding is obtained with functionalized SAMs. • The mechanism of seeding improvement by functionalized SAMs is clearly clarified. - Abstract: Tethering a self-assembled monolayer (SAM) on ultralow-k (porous) dielectric materials as a seed-trapping layer for electroless Cu plating has been extensively studied. By contrast, literature on direct electroless Cu plating of metallic barrier layers assisted by SAMs is scarce. Therefore, Ta, a crucial component of barrier materials for Cu interconnect metallization, was investigated as a model substrate for a new seeding (Ni catalyst formation) process of electroless Cu plating. Transmission and scanning electron microscopies indicated that catalytic particles formed on Ta films through Ta−OH groups tend to become aggregates with an average size of 14 nm and density of 2 × 10{sup 15} m{sup −2}. By contrast, Ta films with a plasma-functionalized SAM tightly bound catalytic particles without agglomeration, thus yielding a markedly smaller size (3 nm) and higher density (3 × 10{sup 16} m{sup −2}; one order greater than those formed by other novel methods). X-ray photoelectron spectroscopy clearly identified the types of material species and functional groups induced at each step of the seeding process. Moreover, the phase of the catalytic particles, either nickel alkoxide, Ni(OH){sub 2}, or metallic Ni, along with the seed-bonding mechanism, was also unambiguously distinguished. The enhancement of film-formation quality of Cu by the new seeding process was thus demonstrated.

Microstructure of edge-type Josephson junctions with PrBa[sub 2]Cu[sub 3]O[sub 7-x] barrier layer

Energy Technology Data Exchange (ETDEWEB)

Lebedev, O I; Vasiliev, A L; Kiselev, N A [Inst. of Crystallography, Russian Academy of Sciences, Moscow (Russia); Mazo, L A; Gaponov, S V; Paveliev, D G; Strikovsky, M D [Inst. of Applied Physics, Russian Academy of Sciences, Novgorod (Russia)

1992-08-01

HREM investigations of edge Josephson junctions (EJJ) with PrBa[sub 2]Cu[sub 3]O[sub 7-x] barrier layer (PB) were performed. All layers (superconducting YBa[sub 2]Cu[sub 3]O[sub 7-x]) (Y1) and (Y2), insulating PrBa[sub 2]Cu[sub 3]O[sub 7-x] (PI) and barrier (PB) were obtained by laser ablation. The edges were formed by ion sputtering using a fotoresist mask. EJJ shows Josephson conductivity at Tc=77 K, giving j[sub c]=10[sup 4] A/cm[sup 2] at U[sub c]=50 [mu]V. Cross-sectional images show that Y1, PI and PB layers are single crystalline with the c-axis normal to the substrate surface. The Y2 layer in the regions of a multilayered structure is polycrystalline. The PB/Y1 interface is characterised by APB line boundaries; it is inclined to the substrate by 20-35deg. (orig.).

Reducing the Schottky barrier between few-layer MoTe2 and gold

Science.gov (United States)

Qi, Dianyu; Wang, Qixing; Han, Cheng; Jiang, Jizhou; Zheng, Yujie; Chen, Wei; Zhang, Wenjing; Thye Shen Wee, Andrew

2017-12-01

Schottky barriers greatly influence the performance of optoelectronic devices. Schottky barriers can be reduced by harnessing the polymorphism of 2D metal transition dichalcogenides, since both semiconducting and metallic phases exist. However, high energy, high temperature or chemicals are normally required for phase transformation, or the processes are complex. In this work, stable low-resistance contacts between few layer MoTe2 flakes and gold electrodes are achieved by a simple thermal annealing treatment at low temperature (200-400 °C). The resulting Schottky barrier height of the annealed MoTe2/Au interface is low (~23 meV). A new Raman A g mode of the 1T‧ metallic phase of MoTe2 on gold electrode is observed, indicating that the low-resistance contact is due to the phase transition of 2H-MoTe2. The gold substrate plays an important role in the transformation, and a higher gold surface roughness increases the transformation rate. With this method, the mobility and ON-state current of the MoTe2 transistor increase by ~3-4 orders of magnitude, the photocurrent of vertically stacked graphene/MoTe2/Au device increases ~300%, and the response time decreases by ~20%.

Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells.

Science.gov (United States)

Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

2014-01-01

The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n(+) emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

Barrier properties of plastic films coated with an Al{sub 2}O{sub 3} layer by roll-to-toll atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Hirvikorpi, Terhi, E-mail: Terhi.Hirvikorpi@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland); Laine, Risto, E-mail: Risto.Laine@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland); Vähä-Nissi, Mika, E-mail: Mika.Vaha-Nissi@vtt.fi [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Kilpi, Väinö, E-mail: Vaino.Kilpi@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland); Salo, Erkki, E-mail: Erkki.Salo@vtt.fi [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Li, Wei-Min, E-mail: Wei-Min.Li@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland); Lindfors, Sven, E-mail: Sven.Lindfors@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland); Vartiainen, Jari, E-mail: Jari.Vartiainen@vtt.fi [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Kenttä, Eija, E-mail: Eija.Kentta@vtt.fi [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Nikkola, Juha, E-mail: Juha.Nikkola@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1300, FI-33101 Tampere (Finland); Harlin, Ali, E-mail: Ali.Harlin@vtt.fi [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Kostamo, Juhana, E-mail: Juhana.Kostamo@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland)

2014-01-01

Thin (30–40 nm) and highly uniform Al{sub 2}O{sub 3} coatings have been deposited at relatively low temperature of 100 °C onto various polymeric materials employing the atomic layer deposition (ALD) technique, both batch and roll-to-roll (R2R) mode. The applications for ALD have long been limited those feasible for batch processing. The work demonstrates that R2R ALD can deposit thin films with properties that are comparable to the film properties fabricated by in batch. This accelerates considerably the commercialization of many products, such as flexible, printed electronics, organic light-emitting diode lighting, third generation thin film photovoltaic devices, high energy density thin film batteries, smart textiles, organic sensors, organic/recyclable packaging materials, and flexible displays, to name a few. - Highlights: • Thin and uniform Al{sub 2}O{sub 3} coatings have been deposited onto polymers materials. • Batch and roll-to-roll (R2R) atomic layer deposition (ALD) have been employed. • Deposition with either process improved the barrier properties. • Sensitivity of coated films to defects affects barrier obtained with R2R ALD.

The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells

KAUST Repository

Brennan, Thomas P.

2012-01-01

Atomic layer deposition (ALD) was used to fabricate Al 2O 3 recombination barriers in solid-state dye-sensitized solar cells (ss-DSSCs) employing an organic hole transport material (HTM) for the first time. Al 2O 3 recombination barriers of varying thickness were incorporated into efficient ss-DSSCs utilizing the Z907 dye adsorbed onto a 2 μm-thick nanoporous TiO 2 active layer and the HTM spiro-OMeTAD. The impact of Al 2O 3 barriers was also studied in devices employing different dyes, with increased active layer thicknesses, and with substrates that did not undergo the TiCl 4 surface treatment. In all instances, electron lifetimes (as determined by transient photovoltage measurements) increased and dark current was suppressed after Al 2O 3 deposition. However, only when the TiCl 4 treatment was eliminated did device efficiency increase; in all other instances efficiency decreased due to a drop in short-circuit current. These results are attributed in the former case to the similar effects of Al 2O 3 ALD and the TiCl 4 surface treatment whereas the insulating properties of Al 2O 3 hinder charge injection and lead to current loss in TiCl 4-treated devices. The impact of Al 2O 3 barrier layers was unaffected by doubling the active layer thickness or using an alternative ruthenium dye, but a metal-free donor-π-acceptor dye exhibited a much smaller decrease in current due to its higher excited state energy. We develop a model employing prior research on Al 2O 3 growth and dye kinetics that successfully predicts the reduction in device current as a function of ALD cycles and is extendable to different dye-barrier systems. © This journal is the Owner Societies 2012.

Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

Science.gov (United States)

Luo, Dongxiang; Zhao, Mingjie; Xu, Miao; Li, Min; Chen, Zikai; Wang, Lang; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

2014-07-23

Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.

Charge modification of the endothelial surface layer modulates the permeability barrier of isolated rat mesenteric small arteries

NARCIS (Netherlands)

van Haaren, Paul M. A.; VanBavel, Ed; Vink, Hans; Spaan, Jos A. E.

2005-01-01

We hypothesized that modulation of the effective charge density of the endothelial surface layer ( ESL) results in altered arterial barrier properties to transport of anionic solutes. Rat mesenteric small arteries ( diameter similar to 190 mu m) were isolated, cannulated, perfused, and superfused

Barrier mechanisms in the Drosophila blood-brain barrier

Directory of Open Access Journals (Sweden)

Samantha Jane Hindle

2014-12-01

Full Text Available The invertebrate blood-brain barrier field is growing at a rapid pace and, in recent years, studies have shown a physiologic and molecular complexity that has begun to rival its vertebrate counterpart. Novel mechanisms of paracellular barrier maintenance through GPCR signaling were the first demonstrations of the complex adaptive mechanisms of barrier physiology. Building upon this work, the integrity of the invertebrate blood-brain barrier has recently been shown to require coordinated function of all layers of the compound barrier structure, analogous to signaling between the layers of the vertebrate neurovascular unit. These findings strengthen the notion that many blood-brain barrier mechanisms are conserved between vertebrates and invertebrates, and suggest that novel findings in invertebrate model organisms will have a significant impact on the understanding of vertebrate BBB functions. In this vein, important roles in coordinating localized and systemic signaling to dictate organism development and growth are beginning to show how the blood-brain barrier can govern whole animal physiologies. This includes novel functions of blood-brain barrier gap junctions in orchestrating synchronized neuroblast proliferation, and of blood-brain barrier secreted antagonists of insulin receptor signaling. These advancements and others are pushing the field forward in exciting new directions. In this review, we provide a synopsis of invertebrate blood-brain barrier anatomy and physiology, with a focus on insights from the past 5 years, and highlight important areas for future study.

Effect of Layer-Graded Bond Coats on Edge Stress Concentration and Oxidation Behavior of Thermal Barrier Coatings

Science.gov (United States)

Zhu, Dongming; Ghosn, Louis J.; Miller, Robert A.

1998-01-01

Thermal barrier coating (TBC) durability is closely related to design, processing and microstructure of the coating Z, tn systems. Two important issues that must be considered during the design of a thermal barrier coating are thermal expansion and modulus mismatch between the substrate and the ceramic layer, and substrate oxidation. In many cases, both of these issues may be best addressed through the selection of an appropriate bond coat system. In this study, a low thermal expansion and layer-graded bond coat system, that consists of plasma-sprayed FeCoNiCrAl and FeCrAlY coatings, and a high velocity oxyfuel (HVOF) sprayed FeCrAlY coating, is developed to minimize the thermal stresses and provide oxidation resistance. The thermal expansion and oxidation behavior of the coating system are also characterized, and the strain isolation effect of the bond coat system is analyzed using the finite element method (FEM). Experiments and finite element results show that the layer-graded bond coat system possesses lower interfacial stresses. better strain isolation and excellent oxidation resistance. thus significantly improving the coating performance and durability.

The barrier to misfit dislocation glide in continuous, strained, epitaxial layers on patterned substrates

International Nuclear Information System (INIS)

Watson, G.P.; Ast, D.G.; Anderson, T.J.; Pathangey, B.

1993-01-01

In a previous report [G. P. Watson, D. G. Ast, T. J. Anderson, and Y. Hayakawa, Appl. Phys. Lett. 58, 2517 (1991)] we demonstrated that the motion of misfit dislocations in InGaAs, grown by organometallic vapor phase epitaxy on patterned GaAs substrates, can be impeded even if the strained epitaxial layer is continuous. Trenches etched into GaAs before growth are known to act as a barrier to misfit dislocation propagation [E. A. Fitzgerald, G. P. Watson, R. E. Proano, D. G. Ast, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, J. Appl. Phys. 65, 2220 (1989)] when those trenches create discontinuities in the epitaxial layers; but even shallow trenches, with continuous strained layers following the surface features, can act as barriers. By considering the strain energy required to change the length of the dislocation glide segments that stretch from the interface to the free surface, a simple model is developed that explains the major features of the unique blocking action observed at the trench edges. The trench wall angle is found to be an important parameter in determining whether or not a trench will block dislocation glide. The predicted blocking angles are consistent with observations made on continuous 300 and 600 nm thick In 0.04 Ga 0.96 As films on patterned GaAs. Based on the model, a structure is proposed that may be used as a filter to yield misfit dislocations with identical Burgers vectors or dislocations which slip in only one glide plane

Computational investigation of the effects of barrier layers on the permeation of hydrogen through metals

International Nuclear Information System (INIS)

Perkins, W.G.

1975-01-01

Results of a computational investigation of the permeation behavior of oxide-coated metal membranes are presented. A steady-state permeation model was developed which promises to be useful in evaluation of oxide layers on metals as hydrogen permeation barriers. The pressure and thickness dependence of steady state permeation through oxide-coated metal membranes is described using plots of logarithmic functions. (U.S.)

Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

Science.gov (United States)

Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

2003-06-01

The properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm3. The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ˜48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC1-x and β-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 °C for 30 min.

Moisture barrier properties of single-layer graphene deposited on Cu films for Cu metallization

Science.gov (United States)

Gomasang, Ploybussara; Abe, Takumi; Kawahara, Kenji; Wasai, Yoko; Nabatova-Gabain, Nataliya; Thanh Cuong, Nguyen; Ago, Hiroki; Okada, Susumu; Ueno, Kazuyoshi

2018-04-01

The moisture barrier properties of large-grain single-layer graphene (SLG) deposited on a Cu(111)/sapphire substrate are demonstrated by comparing with the bare Cu(111) surface under an accelerated degradation test (ADT) at 85 °C and 85% relative humidity (RH) for various durations. The change in surface color and the formation of Cu oxide are investigated by optical microscopy (OM) and X-ray photoelectron spectroscopy (XPS), respectively. First-principle simulation is performed to understand the mechanisms underlying the barrier properties of SLG against O diffusion. The correlation between Cu oxide thickness and SLG quality are also analyzed by spectroscopic ellipsometry (SE) measured on a non-uniform SLG film. SLG with large grains shows high performance in preventing the Cu oxidation due to moisture during ADT.

The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells

KAUST Repository

Brennan, Thomas P.; Bakke, Jonathan R.; Ding, I-Kang; Hardin, Brian E.; Nguyen, William H.; Mondal, Rajib; Bailie, Colin D.; Margulis, George Y.; Hoke, Eric T.; Sellinger, Alan; McGehee, Michael D.; Bent, Stacey F.

2012-01-01

Atomic layer deposition (ALD) was used to fabricate Al 2O 3 recombination barriers in solid-state dye-sensitized solar cells (ss-DSSCs) employing an organic hole transport material (HTM) for the first time. Al 2O 3 recombination barriers of varying

Defect analysis in low temperature atomic layer deposited Al{sub 2}O{sub 3} and physical vapor deposited SiO barrier films and combination of both to achieve high quality moisture barriers

Energy Technology Data Exchange (ETDEWEB)

Maindron, Tony, E-mail: tony.maindron@cea.fr; Jullien, Tony; André, Agathe [Université Grenoble-Alpes, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France)

2016-05-15

Al{sub 2}O{sub 3} [20 nm, atomic layer deposition (ALD)] and SiO films' [25 nm, physical vacuum deposition (PVD)] single barriers as well as hybrid barriers of the Al{sub 2}O{sub 3}/SiO or SiO/Al{sub 2}O{sub 3} have been deposited onto single 100 nm thick tris-(8-hydroxyquinoline) aluminum (AlQ{sub 3}) organic films made onto silicon wafers. The defects in the different barrier layers could be easily observed as nonfluorescent AlQ{sub 3} black spots, under ultraviolet light on the different systems stored into accelerated aging conditions (85 °C/85% RH, ∼2000 h). It has been observed that all devices containing an Al{sub 2}O{sub 3} layer present a lag time τ from which defect densities of the different systems start to increase significantly. This is coherent with the supposed pinhole-free nature of fresh, ALD-deposited, Al{sub 2}O{sub 3} films. For t > τ, the number of defect grows linearly with storage time. For devices with the single Al{sub 2}O{sub 3} barrier layer, τ has been estimated to be 64 h. For t > τ, the defect occurrence rate has been calculated to be 0.268/cm{sup 2}/h. Then, a total failure of fluorescence of the AlQ{sub 3} film appears between 520 and 670 h, indicating that the Al{sub 2}O{sub 3} barrier has been totally degraded by the hot moisture. Interestingly, the device with the hybrid barrier SiO/Al{sub 2}O{sub 3} shows the same characteristics as the device with the single Al{sub 2}O{sub 3} barrier (τ = 59 h; 0.246/cm{sup 2}/h for t > τ), indicating that Al{sub 2}O{sub 3} ALD is the factor that limits the performance of the barrier system when it is directly exposed to moisture condensation. At the end of the storage period (1410 h), the defect density for the system with the hybrid SiO/Al{sub 2}O{sub 3} barrier is 120/cm{sup 2}. The best sequence has been obtained when Al{sub 2}O{sub 3} is passivated by the SiO layer (Al{sub 2}O{sub 3}/SiO). In that case, a large lag time of 795 h and a very

Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

International Nuclear Information System (INIS)

Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

2003-01-01

The properties of WN x C y films deposited by atomic layer deposition (ALD) using WF 6 , NH 3 , and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm 3 . The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ∼48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC 1-x and β-W 2 N with an equiaxed microstructure. The barrier property of this ALD-WN x C y film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 deg. C for 30 min

InGaP Heterojunction Barrier Solar Cells

Science.gov (United States)

Welser, Roger E. (Inventor)

2014-01-01

A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

Built-in potential shift and Schottky-barrier narrowing in organic solar cells with UV-sensitive electron transport layers.

Science.gov (United States)

Li, Cheng; Credgington, Dan; Ko, Doo-Hyun; Rong, Zhuxia; Wang, Jianpu; Greenham, Neil C

2014-06-28

The performance of organic solar cells incorporating solution-processed titanium suboxide (TiOx) as electron-collecting layers can be improved by UV illumination. We study the mechanism of this improvement using electrical measurements and electroabsorption spectroscopy. We propose a model in which UV illumination modifies the effective work function of the oxide layer through a significant increase in its free electron density. This leads to a dramatic improvement in device power conversion efficiency through several mechanisms - increasing the built-in potential by 0.3 V, increasing the conductivity of the TiOx layer and narrowing the interfacial Schottky barrier between the suboxide and the underlying transparent electrode. This work highlights the importance of considering Fermi-level equilibration when designing multi-layer transparent electrodes.

Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

Energy Technology Data Exchange (ETDEWEB)

Fiorentino, Giuseppe, E-mail: g.fiorentino@tudelft.nl; Morana, Bruno [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT Delft (Netherlands); Forte, Salvatore [Department of Electronic, University of Naples Federico II, Piazzale Tecchio, 80125 Napoli (Italy); Sarro, Pasqualina Maria [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT, Delft (Netherlands)

2015-01-15

In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

International Nuclear Information System (INIS)

Dai, X.H.; Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z.; Ma, L.X.; Zhao, H.D.; Liu, B.T.

2015-01-01

Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La 0.5 Sr 0.5 CoO 3 /PbZr 0.4 Ti 0.6 O 3 /La 0.5 Sr 0.5 CoO 3 (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm 2 , small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories

4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

Energy Technology Data Exchange (ETDEWEB)

Dai, X.H. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); Ma, L.X. [Department of Physics, Blinn College, Bryan, TX 77805 (United States); Zhao, H.D. [College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Liu, B.T., E-mail: btliu@hbu.cn [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China)

2015-10-05

Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/PbZr{sub 0.4}Ti{sub 0.6}O{sub 3}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm{sup 2}, small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories.

Layer-by-layer assembly of thin film oxygen barrier

International Nuclear Information System (INIS)

Jang, Woo-Sik; Rawson, Ian; Grunlan, Jaime C.

2008-01-01

Thin films of sodium montmorillonite clay and cationic polyacrylamide were grown on a polyethylene terephthalate film using layer-by-layer assembly. After 30 clay-polymer layers are deposited, with a thickness of 571 nm, the resulting transparent film has an oxygen transmission rate (OTR) below the detection limit of commercial instrumentation ( 2 /day/atm). This low OTR, which is unprecedented for a clay-filled polymer composite, is believed to be due to a brick wall nanostructure comprised of completely exfoliated clay in polymeric mortar. With an optical transparency greater than 90% and potential for microwaveability, this thin composite is a good candidate for foil replacement in food packaging and may also be useful for flexible electronics packaging

Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

KAUST Repository

Ip, Alexander H.; Labelle, André J.; Sargent, Edward H.

2013-01-01

Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells. © 2013 AIP Publishing LLC.

Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

KAUST Repository

Ip, Alexander H.

2013-12-23

Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells. © 2013 AIP Publishing LLC.

Influence of Ni Catalyst Layer and TiN Diffusion Barrier on Carbon Nanotube Growth Rate

Directory of Open Access Journals (Sweden)

Mérel Philippe

2010-01-01

Full Text Available Abstract Dense, vertically aligned multiwall carbon nanotubes were synthesized on TiN electrode layers for infrared sensing applications. Microwave plasma-enhanced chemical vapor deposition and Ni catalyst were used for the nanotubes synthesis. The resultant nanotubes were characterized by SEM, AFM, and TEM. Since the length of the nanotubes influences sensor characteristics, we study in details the effects of changing Ni and TiN thickness on the physical properties of the nanotubes. In this paper, we report the observation of a threshold Ni thickness of about 4 nm, when the average CNT growth rate switches from an increasing to a decreasing function of increasing Ni thickness, for a process temperature of 700°C. This behavior is likely related to a transition in the growth mode from a predominantly “base growth” to that of a “tip growth.” For Ni layer greater than 9 nm the growth rate, as well as the CNT diameter, variations become insignificant. We have also observed that a TiN barrier layer appears to favor the growth of thinner CNTs compared to a SiO2 layer.

Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts

International Nuclear Information System (INIS)

Lü Yuan-Jie; Lin Zhao-Jun; Zhang Yu; Meng Ling-Guo; Cao Zhi-Fang; Luan Chong-Biao; Chen Hong; Wang Zhan-Guo

2011-01-01

Ni Schottky contacts on AlGaN/GaN heterostructures were fabricated. Some samples were thermally treated in a furnace with N 2 ambience at 600 °C for different times (0.5 h, 4.5 h, 10.5 h, 18 h, 33 h, 48 h, and 72 h), the others were thermally treated for 0.5 h at different temperatures (500 °C, 600 °C, 700 °C, and 800 °C). With the measured current—voltage (I—V) and capacitance—voltage (C—V) curves and by self-consistently solving Schrodinger's and Poisson's equations, we found that the relative permittivity of the AlGaN barrier layer was related to the piezoelectric and the spontaneous polarization of the AlGaN barrier layer. The relative permittivity was in proportion to the strain of the AlGaN barrier layer. The relative permittivity and the strain reduced with the increased thermal stress time until the AlGaN barrier totally relaxed (after 18 h at 600 °C in the current study), and then the relative permittivity was almost a constant with the increased thermal stress time. When the sample was treated at 800 °C for 0.5 h, the relative permittivity was less than the constant due to the huge diffusion of the contact metal atoms. Considering the relation between the relative permittivity of the AlGaN barrier layer and the converse piezoelectric effect, the conclusion can be made that a moderate thermal stress can restrain the converse piezoelectric effect and can improve the stability of AlGaN/GaN heterostructure devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer

Science.gov (United States)

Mahato, Somnath; Puigdollers, Joaquim

2018-02-01

Temperature dependent current-voltage (I‒V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and silicon. The basic Schottky diode parameters such as ideality factor (n), barrier height (ϕb 0) and series resistance (Rs) are calculated and successfully explained by the thermionic emission (TE) theory. It has been found that ideality factor decreased and barrier height increased with increased of temperature. The conventional Richardson plot of ln(I0/T2) vs. 1000/T is determined the activation energy (Ea) and Richardson constant (A*). Whereas value of 'A*' is much smaller than the known theoretical value of n-type Si. The temperature dependent I-V characteristics obtained the mean value of barrier height (ϕb 0 bar) and standard deviation (σs) from the linear plot of ϕap vs. 1000/T. From the modified Richardson plot of ln(I0/T2) ˗ (qσ)2/2(kT)2 vs. 1000/T gives Richardson constant and homogeneous barrier height of Schottky diodes. Main observation in this present work is the barrier height and ideality factor shows a considerable change but the series resistance value exhibits negligible change due to TMO as an interface layer.

Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition

International Nuclear Information System (INIS)

Kim, H.; Detavenier, C.; Straten, O. van der; Rossnagel, S.M.; Kellock, A.J.; Park, D.-G.

2005-01-01

TaN x diffusion barriers with good barrier properties at subnanometer thickness were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from pentakis(dimethylamino)Ta. Hydrogen and/or nitrogen plasma was used as reactants to produce TaN x thin films with a different nitrogen content. The film properties including the carbon and oxygen impurity content were affected by the nitrogen flow during the process. The deposited film has nanocrystalline grains with hydrogen-only plasma, while the amorphous structure was obtained for nitrogen plasma. The diffusion barrier properties of deposited TaN films for Cu interconnects have been studied by thermal stress test based on synchrotron x-ray diffraction. The results indicate that the PE-ALD TaN films are good diffusion barriers even at a small thickness as 0.6 nm. Better diffusion barrier properties were obtained for higher nitrogen content. Based on a diffusion kinetics analysis, the nanocrystalline microstructure of the films was responsible for the better diffusion barrier properties compared to polycrystalline PE-ALD TaN films deposited from TaCl 5

Graphene-based stretchable and transparent moisture barrier

Science.gov (United States)

Won, Sejeong; Van Lam, Do; Lee, Jin Young; Jung, Hyun-June; Hur, Min; Kim, Kwang-Seop; Lee, Hak-Joo; Kim, Jae-Hyun

2018-03-01

We propose an alumina-deposited double-layer graphene (2LG) as a transparent, scalable, and stretchable barrier against moisture; this barrier is indispensable for foldable or stretchable organic displays and electronics. Both the barrier property and stretchability were significantly enhanced through the introduction of 2LG between alumina and a polymeric substrate. 2LG with negligible polymeric residues was coated on the polymeric substrate via a scalable dry transfer method in a roll-to-roll manner; an alumina layer was deposited on the graphene via atomic layer deposition. The effect of the graphene layer on crack generation in the alumina layer was systematically studied under external strain using an in situ micro-tensile tester, and correlations between the deformation-induced defects and water vapor transmission rate were quantitatively analyzed. The enhanced stretchability of alumina-deposited 2LG originated from the interlayer sliding between the graphene layers, which resulted in the crack density of the alumina layer being reduced under external strain.

Densification of Ce0.9Gd0.1O1.95 barrier layer by in-situ solid state reaction

DEFF Research Database (Denmark)

Ni, De Wei; Esposito, Vincenzo

2014-01-01

A novel methodology, called in-situ solid state reaction (SSR), is developed and achieved for the densification of gadolinia doped ceria (CGO) barrier layer (BL) within the solid oxide fuel cell (SOFC) technology. The method is based on the combined use of impregnation technique and a designed two...

Radiolysis products and sensory properties of electron-beam-irradiated high-barrier food-packaging films containing a buried layer of recycled low-density polyethylene.

Science.gov (United States)

Chytiri, S D; Badeka, A V; Riganakos, K A; Kontominas, M G

2010-04-01

The aim was to study the effect of electron-beam irradiation on the production of radiolysis products and sensory changes in experimental high-barrier packaging films composed of polyamide (PA), ethylene-vinyl alcohol (EVOH) and low-density polyethylene (LDPE). Films contained a middle buried layer of recycled LDPE, while films containing 100% virgin LDPE as the middle buried layer were taken as controls. Irradiation doses ranged between zero and 60 kGy. Generally, a large number of radiolysis products were produced during electron-beam irradiation, even at the lower absorbed doses of 5 and 10 kGy (approved doses for food 'cold pasteurization'). The quantity of radiolysis products increased with irradiation dose. There were no significant differences in radiolysis products identified between samples containing a recycled layer of LDPE and those containing virgin LDPE (all absorbed doses), indicating the 'functional barrier' properties of external virgin polymer layers. Sensory properties (mainly taste) of potable water were affected after contact with irradiated as low as 5 kGy packaging films. This effect increased with increasing irradiation dose.

Fabrication of High Gas Barrier Epoxy Nanocomposites: An Approach Based on Layered Silicate Functionalized by a Compatible and Reactive Modifier of Epoxy-Diamine Adduct

Directory of Open Access Journals (Sweden)

Ran Wei

2018-05-01

Full Text Available To solve the drawbacks of poor dispersion and weak interface in gas barrier nanocomposites, a novel epoxy-diamine adduct (DDA was synthesized by reacting epoxy monomer DGEBA with curing agent D400 to functionalize montmorillonite (MMT, which could provide complete compatibility and reactivity with a DGEBA/D400 epoxy matrix. Thereafter, sodium type montmorillonite (Na-MMT and organic-MMTs functionalized by DDA and polyether amines were incorporated with epoxy to manufacture nanocomposites. The effects of MMT functionalization on the morphology and gas barrier property of nanocomposites were evaluated. The results showed that DDA was successfully synthesized, terminating with epoxy and amine groups. By simulating the small-angle neutron scattering data with a sandwich structure model, the optimal dispersion/exfoliation of MMT was observed in a DDA-MMT/DGEBA nanocomposite with a mean radius of 751 Å, a layer thickness of 30.8 Å, and only two layers in each tactoid. Moreover, the DDA-MMT/DGEBA nanocomposite exhibited the best N2 barrier properties, which were about five times those of neat epoxy. Based on a modified Nielsen model, it was clarified that this excellent gas barrier property was due to the homogeneously dispersed lamellas with almost exfoliated structures. The improved morphology and barrier property confirmed the superiority of the adduct, which provides a general method for developing gas barrier nanocomposites.

Hanford Permanent Isolation Barrier Program: Asphalt technology test plan

Energy Technology Data Exchange (ETDEWEB)

Freeman, H.D.; Romine, R.A.

1994-05-01

The Hanford Permanent Isolation Barriers use engineered layers of natural materials to create an integrated structure with backup protective features. The objective of current designs is to develop a maintenance-free permanent barrier that isolates wastes for a minimum of 1000 years by limiting water drainage to near-zero amounts. Asphalt is being used as an impermeable water diversion layer to provide a redundant layer within the overall barrier design. Data on asphalt barrier properties in a buried environment are not available for the required 100-year time frame. The purpose of this test plan is to outline the activities planned to obtain data with which to estimate performance of the asphalt layers.

Hanford Permanent Isolation Barrier Program: Asphalt technology test plan

International Nuclear Information System (INIS)

Freeman, H.D.; Romine, R.A.

1994-05-01

The Hanford Permanent Isolation Barriers use engineered layers of natural materials to create an integrated structure with backup protective features. The objective of current designs is to develop a maintenance-free permanent barrier that isolates wastes for a minimum of 1000 years by limiting water drainage to near-zero amounts. Asphalt is being used as an impermeable water diversion layer to provide a redundant layer within the overall barrier design. Data on asphalt barrier properties in a buried environment are not available for the required 100-year time frame. The purpose of this test plan is to outline the activities planned to obtain data with which to estimate performance of the asphalt layers

Reduction of basal plane defects in (11-22) semipolar InGaN/GaN MQWs fabricated on patterned (113) Si substrates by introducing AlGaN barrier layers

Energy Technology Data Exchange (ETDEWEB)

Uesugi, Kenjiro; Hikosaka, Toshiki; Ono, Hiroshi; Sakano, Tatsunori; Nunoue, Shinya [Corporate Research and Development Center, Toshiba Corporation, Kawasaki (Japan)

2017-08-15

GaN grown on nonpolar or semipolar faces have been widely developed as a promising material for the next generation optical and electronic devices. In this work, (11-22) semipolar InGaN/GaN MQWs were grown on patterned (113) Si substrates and fabricated into thin-film-type flip-chip LEDs. From CL and TEM measurement, generation of basal plane defects (BPDs) around MQWs and Strain-relaxation layers (SRLs) has been observed. The relationship between MQW structures and formation of BPDs has been investigated. By optimizing MQW structures, light output power and external quantum efficiency have been improved with thick InGaN well layers and GaN barrier layers. Introducing AlGaN barrier layers has enabled further reduction of BPDs in MQWs and, as a result, an enhancement of EQE has been achieved. The maximum EQE value of the sample with AlGaN barrier layers was 12.9%.This result indicates that the reduction of BPDs is an effective approach for obtaining the high-efficiency semipolar LEDs on Si substrates. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Antimicrobial Peptides, Infections and the Skin Barrier

DEFF Research Database (Denmark)

Clausen, Maja Lisa; Agner, Tove

2016-01-01

The skin serves as a strong barrier protecting us from invading pathogens and harmful organisms. An important part of this barrier comes from antimicrobial peptides (AMPs), which are small peptides expressed abundantly in the skin. AMPs are produced in the deeper layers of the epidermis and trans......The skin serves as a strong barrier protecting us from invading pathogens and harmful organisms. An important part of this barrier comes from antimicrobial peptides (AMPs), which are small peptides expressed abundantly in the skin. AMPs are produced in the deeper layers of the epidermis...

Application of diffusion barriers to high modulus fibers

Science.gov (United States)

Veltri, R. D.; Douglas, F. C.; Paradis, E. L.; Galasso, F. S.

1977-01-01

Barrier layers were coated onto high-modulus fibers, and nickel and titanium layers were overcoated as simulated matrix materials. The objective was to coat the high-strength fibers with unreactive selected materials without degrading the fibers. The fibers were tungsten, niobium, and single-crystal sapphire, while the materials used as barrier coating layers were Al2O3, Y2O3, TiC, ZrC, WC with 14% Co, and HfO2. An ion-plating technique was used to coat the fibers. The fibers were subjected to high-temperature heat treatments to evaluate the effectiveness of the barrier layer in preventing fiber-metal interactions. Results indicate that Al2O3, Y2O3, and HfO2 can be used as barrier layers to minimize the nickel-tungsten interaction. Further investigation, including thermal cycling tests at 1090 C, revealed that HfO2 is probably the best of the three.

A novel GaN HEMT with double recessed barrier layer for high efficiency-energy applications

Science.gov (United States)

Jia, Hujun; Luo, Yehui; Wu, Qiuyuan; Yang, Yintang

2017-11-01

In this paper, a novel GaN HEMT with high efficiency-energy characteristic is proposed. Different from the conventional structure, the proposed structure contains double recessed barriers layer (DRBL) beside the gate. The key idea in this work is to improve the microwave output characteristics. The simulated results show that the drain saturation current and peak transconductance of DRBL GaN HEMT is slightly decreased, the transconductance saturation flatness is increased by 0.5 V and the breakdown voltage is also enhanced too. Due to the both recessed barrier layer, the gate-drain/gate-source capacitance is decreased by 6.3% and 11.3%, respectively. The RF simulated results show that the maximum oscillation frequency for DRBL GaN HEMT is increased from 57 GHz to 64 GHz and the saturation power density is 8.7 W/mm at 600 MHz, 6.9 W/mm at 1200 MHz with the higher power added efficiency (PAE). Further investigation show that DRBL GaN HEMT can achieve to 6.4 W/mm and the maximum PAE 83.8% at 2400 MHz. Both are higher than the 5.0 W/mm and 80.3% for the conventional structure. When the operating frequency increases to X band, the DRBL GaN HEMT still exhibits the superior output performances. All the results show that the advantages and the potential capacities of DRBL GaN HEMT at high efficiency-energy are greater than the conventional GaN HEMT.

Outer brain barriers in rat and human development

DEFF Research Database (Denmark)

Brøchner, Christian B; Holst, Camilla Bjørnbak; Møllgård, Kjeld

2015-01-01

Complex barriers at the brain's surface, particularly in development, are poorly defined. In the adult, arachnoid blood-cerebrospinal fluid (CSF) barrier separates the fenestrated dural vessels from the CSF by means of a cell layer joined by tight junctions. Outer CSF-brain barrier provides...... diffusion restriction between brain and subarachnoid CSF through an initial radial glial end feet layer covered with a pial surface layer. To further characterize these interfaces we examined embryonic rat brains from E10 to P0 and forebrains from human embryos and fetuses (6-21st weeks post...

Numerical simulations of capillary barrier field tests

International Nuclear Information System (INIS)

Morris, C.E.; Stormont, J.C.

1997-01-01

Numerical simulations of two capillary barrier systems tested in the field were conducted to determine if an unsaturated flow model could accurately represent the observed results. The field data was collected from two 7-m long, 1.2-m thick capillary barriers built on a 10% grade that were being tested to investigate their ability to laterally divert water downslope. One system had a homogeneous fine layer, while the fine soil of the second barrier was layered to increase its ability to laterally divert infiltrating moisture. The barriers were subjected first to constant infiltration while minimizing evaporative losses and then were exposed to ambient conditions. The continuous infiltration period of the field tests for the two barrier systems was modelled to determine the ability of an existing code to accurately represent capillary barrier behavior embodied in these two designs. Differences between the field test and the model data were found, but in general the simulations appeared to adequately reproduce the response of the test systems. Accounting for moisture retention hysteresis in the layered system will potentially lead to more accurate modelling results and is likely to be important when developing reasonable predictions of capillary barrier behavior

Positron annihilation lifetime spectroscopy (PALS) application in metal barrier layer integrity for porous low- k materials

CERN Document Server

Simon, Lin; Gidley, D W; Wetzel, J T; Monnig, K A; Ryan, E T; Simon, Jang; Douglas, Yu; Liang, M S; En, W G; Jones, E C; Sturm, J C; Chan, M J; Tiwari, S C; Hirose, M

2002-01-01

Positron Annihilation Lifetime Spectroscopy (PALS) is a useful tool to pre-screen metal barrier integrity for Si-based porous low-k dielectrics. Pore size of low-k, thickness of metal barrier Ta, positronium (Ps) leakage from PALS, trench sidewall morphology, electrical test from one level metal (1LM) pattern wafer and Cu diffusion analysis were all correlated. Macro-porous low-k (pore size >=200 AA) and large scale meso-porous low-k (>50~200 AA) encounter both Ps leakage and Cu diffusion into low-k dielectric in the 0.25 mu mL/0.3 mu mS structures when using SEMATECH in-house PVD Ta 250 AA as barrier layer. For small scale meso-porous (>20~50 AA) and micro- porous (<=20 AA) low-k, no Ps leakage and no Cu diffusion into low-k were observed even with PVD Ta 50 AA, which is proved also owing to sidewall densification to seal all sidewall pores due to plasma etch and ash. For future technology, smaller pore size of porous Si-based low-k (=<50 AA) will be preferential for dense low-k like trench sidewall to...

Effect of a gate buffer layer on the performance of a 4H-SiC Schottky barrier field-effect transistor

International Nuclear Information System (INIS)

Zhang Xianjun; Yang Yintang; Chai Changchun; Duan Baoxing; Song Kun; Chen Bin

2012-01-01

A lower doped layer is inserted between the gate and channel layer and its effect on the performance of a 4H-SiC Schottky barrier field-effect transistor (MESFET) is investigated. The dependences of the drain current and small signal parameters on this inserted gate-buffer layer are obtained by solving one-dimensional (1-D) and two-dimensional (2-D) Poisson's equations. The drain current and small signal parameters of the 4H-SiC MESFET with a gate-buffer layer thickness of 0.15 μm are calculated and the breakdown characteristics are simulated. The results show that the current is increased by increasing the thickness of the gate-buffer layer; the breakdown voltage is 160 V, compared with 125 V for the conventional 4H-SiC MESFET; the cutoff frequency is 27 GHz, which is higher than 20 GHz of the conventional structure due to the lower doped gate-buffer layer. (semiconductor devices)

Self-Formed Barrier with Cu-Mn alloy Metallization and its Effects on Reliability

International Nuclear Information System (INIS)

Koike, J.; Wada, M.; Usui, T.; Nasu, H.; Takahashi, S.; Shimizu, N.; Yoshimaru, M.; Shibata, H.

2006-01-01

Advancement of semiconductor devices requires the realization of an ultra-thin (less than 5 nm thick) diffusion barrier layer between Cu interconnect and insulating layers. Self-forming barrier layers have been considered as an alternative barrier structure to the conventional Ta/TaN barrier layers. The present work investigated the possibility of the self-forming barrier layer using Cu-Mn alloy thin films deposited directly on SiO2. After annealing at 450 deg. C for 30 min, an amorphous oxide layer of 3-4 nm in thickness was formed uniformly at the interface. The oxide formation was accompanied by complete expulsion of Mn atoms from the Cu-Mn alloy, leading to a drastic decrease in resistivity of the film. No interdiffusion was observed between Cu and SiO2, indicating an excellent diffusion-barrier property of the interface oxide

Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures

International Nuclear Information System (INIS)

Kirste, Lutz; Lim, Taek; Aidam, Rolf; Mueller, Stefan; Waltereit, Patrick; Ambacher, Oliver

2010-01-01

A high-resolution X-ray diffraction and X-ray reflectivity study of the structural properties of AlInN/GaN and AlGaInN/GaN high electron mobility transistor structures deposited by molecular beam epitaxy on metal organic chemical vapor deposition GaN/Al 2 O 3 and GaN/SiC templates is presented. A new AlN/GaN/AlN triple-interlayer is implemented to improve the interface properties between barrier layer and GaN buffer for a higher mobility of the polarization induced two-dimensional electron gas. Layer properties and structural parameters like concentration, interface quality, layer thickness, strain and crystalline perfection are analyzed. Best structural properties are achieved for an AlGaInN layer with AlN/GaN/AlN interlayer deposited on a GaN/4H-SiC (00.1) template. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Aluminium oxide barrier films on polymeric web and their conversion for packaging applications

OpenAIRE

Struller, CF; Kelly, PJ; Copeland, NJ; Tobin, V; Assender, HE; Holliday, CW; Read, SJ

2013-01-01

In recent years, inorganic transparent barrier layers such as aluminium oxide or silicon oxide deposited onto polymer films have emerged as an attractive alternative to polymer based transparent barrier layers for flexible food packaging materials. For this application, barrier properties against water vapour and oxygen are critical. Aluminium oxide coatings can provide good barrier levels at thicknesses in the nanometre range, compared to several micrometres for polymer-based barrier layers....

Field study plan for alternate barriers

International Nuclear Information System (INIS)

Freeman, H.D.; Gee, G.W.; Relyea, J.F.

1989-05-01

Pacific Northwest Laboratory (PNL) is providing technical assistance in selecting, designing, evaluating, and demonstrating protective barriers. As part of this technical assistance effort, asphalt, clay, and chemical grout will be evaluated for use as alternate barriers. The purpose of the subsurface layer is to reduce the likelihood that extreme events (i.e., 100-year maximum storms, etc.) will cause significant drainage through the barrier. The tests on alternate barriers will include laboratory and field analysis of the subsurface layer performance. This field test plan outlines the activities required to test and design subsurface moisture barriers. The test plan covers activities completed in FY 1988 and planned through FY 1992 and includes a field-scale test of one or more of the alternate barriers to demonstrate full-scale application techniques and to provide performance data on a larger scale. Tests on asphalt, clay, and chemical grout were initiated in FY 1988 in small (30.5 cm diameter) tube-layer lysimeters. The parameters used for testing the materials were different for each one. The tests had to take into account the differences in material characteristics and response to change in conditions, as well as information provided by previous studies. 33 refs., 8 figs., 1 tab

Mechanical Properties of Layered La2Zr2O7 Thermal Barrier Coatings

Science.gov (United States)

Guo, Xingye; Li, Li; Park, Hyeon-Myeong; Knapp, James; Jung, Yeon-Gil; Zhang, Jing

2018-04-01

Lanthanum zirconate (La2Zr2O7) has been proposed as a promising thermal barrier coating (TBC) material due to its low thermal conductivity and high stability at high temperatures. In this work, both single and double-ceramic-layer (DCL) TBC systems of La2Zr2O7 and 8 wt.% yttria-stabilized zirconia (8YSZ) were prepared using air plasma spray (APS) technique. The thermomechanical properties and microstructure were investigated. Thermal gradient mechanical fatigue (TGMF) tests were applied to investigate the thermal cycling performance. The results showed that DCL La2Zr2O7 + 8YSZ TBC samples lasted fewer cycles compared with single-layered 8YSZ TBC samples in TGMF tests. This is because DCL La2Zr2O7 TBC samples had higher residual stress during the thermal cycling process, and their fracture toughness was lower than that of 8YSZ. Bond strength test results showed that 8YSZ TBC samples had higher bond strength compared with La2Zr2O7. The erosion rate of La2Zr2O7 TBC samples was higher than that of 8YSZ samples, due to the lower critical erodent velocity and fracture toughness of La2Zr2O7. DCL porous 8YSZ + La2Zr2O7 had a lower erosion rate than other SCL and DCL La2Zr2O7 coatings, suggesting that porous 8YSZ serves as a stress-relief buffer layer.

Barrier mechanisms in the Drosophila blood-brain barrier.

Science.gov (United States)

Hindle, Samantha J; Bainton, Roland J

2014-01-01

The invertebrate blood-brain barrier (BBB) field is growing at a rapid pace and, in recent years, studies have shown a physiologic and molecular complexity that has begun to rival its vertebrate counterpart. Novel mechanisms of paracellular barrier maintenance through G-protein coupled receptor signaling were the first demonstrations of the complex adaptive mechanisms of barrier physiology. Building upon this work, the integrity of the invertebrate BBB has recently been shown to require coordinated function of all layers of the compound barrier structure, analogous to signaling between the layers of the vertebrate neurovascular unit. These findings strengthen the notion that many BBB mechanisms are conserved between vertebrates and invertebrates, and suggest that novel findings in invertebrate model organisms will have a significant impact on the understanding of vertebrate BBB functions. In this vein, important roles in coordinating localized and systemic signaling to dictate organism development and growth are beginning to show how the BBB can govern whole animal physiologies. This includes novel functions of BBB gap junctions in orchestrating synchronized neuroblast proliferation, and of BBB secreted antagonists of insulin receptor signaling. These advancements and others are pushing the field forward in exciting new directions. In this review, we provide a synopsis of invertebrate BBB anatomy and physiology, with a focus on insights from the past 5 years, and highlight important areas for future study.

Investigation of Top/bottom Electrode and Diffusion Barrier Layer for PZT thick film MEMS Sensors

DEFF Research Database (Denmark)

Pedersen, Thomas; Hindrichsen, Christian Carstensen; Lou-Møller, R.

2007-01-01

In this work screen printed piezoelectric Ferroperm PZ26 lead zirconate titanate (PZT) thick film is used for two MEMS devices. A test structure is used to investigate several aspects regarding bottom and top electrodes. 450 nm ZrO2 thin film is found to be an insufficient diffusion barrier layer...... for thick film PZT sintered at 850degC. E-beam evaporated Al and Pt is patterned on PZT with a lift-off process with a line width down to 3 mum. The roughness of the PZT is found to have a strong influence on the conductance of the top electrode....

Characteristics of surface mount low barrier silicon Schottky diodes with boron contamination in the substrate–epitaxial layer interface

International Nuclear Information System (INIS)

Pal, Debdas; Hoag, David; Barter, Margaret

2012-01-01

Unusual negative resistance characteristics were observed in low barrier HMIC (Heterolithic Microwave Integrated Circuit) silicon Schottky diodes with HF (hydrofluoric acid)/IPA (isopropyl alcohol) vapor clean prior to epitaxial growth of silicon. SIMS (secondary ion mass spectroscopy) analysis and the results of the buried layer structure confirmed boron contamination in the substrate/epitaxial layer interface. Consequently the structure turned into a thyristor like p-n-p-n device. A dramatic reduction of boron contamination was found in the wafers with H 2 0/HCl/HF dry only clean prior to growth, which provided positive resistance characteristics. Consequently the mean differential resistance at 10 mA was reduced to about 8.1 Ω. The lower series resistance (5.6–5.9 Ω) and near 1 ideality factor (1.03–1.06) of the Schottky devices indicated the good quality of the epitaxial layer. (paper)

Filamentary and diffuse barrier discharges

International Nuclear Information System (INIS)

Kogelschatz, U.

2001-01-01

Barrier discharges, sometimes also referred to as dielectric-barrier discharges or silent discharges, are characterized by the presence of at least one insulating layer in contact with the discharge between two planar or cylindrical electrodes connected to an ac power supply. The main advantage of this type of electrical discharge is, that non-equilibrium plasma conditions in atmospheric-pressure gases can be established in an economic and reliable way. This has led to a number of important applications including industrial ozone generation, surface modification of polymers, plasma chemical vapor deposition, excitation of CO 2 lasers, excimer lamps and, most recently, large-area flat plasma display panels. Depending on the application, the width of the discharge gap can range from less than 0.1 mm to about 100 mm and the applied frequency from below line frequency to several gigahertz. Typical materials used for the insulating layer (dielectric barrier) are glass, quartz, ceramics but also thin enamel or polymer layers

Combined effect of capillary barrier and layered slope on water, solute and nanoparticle transfer in an unsaturated soil at lysimeter scale.

Science.gov (United States)

Prédélus, Dieuseul; Coutinho, Artur Paiva; Lassabatere, Laurent; Bien, Le Binh; Winiarski, Thierry; Angulo-Jaramillo, Rafael

2015-10-01

It is well recognized that colloidal nanoparticles are highly mobile in soils and can facilitate the transport of contaminants through the vadose zone. This work presents the combined effect of the capillary barrier and soil layer slope on the transport of water, bromide and nanoparticles through an unsaturated soil. Experiments were performed in a lysimeter (1×1×1.6m(3)) called LUGH (Lysimeter for Urban Groundwater Hydrology). The LUGH has 15 outputs that identify the temporal and spatial evolution of water flow, solute flux and nanoparticles in relation to the soil surface conditions and the 3D system configuration. Two different soil structures were set up in the lysimeter. The first structure comprises a layer of sand (0-0.2cm, in diameter) 35cm thick placed horizontally above a layer of bimodal mixture also 35cm thick to create a capillary barrier at the interface between the sand and bimodal material. The bimodal material is composed of a mixture 50% by weight of sand and gravel (0.4-1.1cm, in diameter). The second structure, using the same amount of sand and bimodal mixture as the first structure represents an interface with a 25% slope. A 3D numerical model based on Richards equation for flow and the convection dispersion equations coupled with a mechanical module for nanoparticle trapping was developed. The results showed that under the effect of the capillary barrier, water accumulated at the interface of the two materials. The sloped structure deflects flow in contrast to the structure with zero slope. Approximately 80% of nanoparticles are retained in the lysimeter, with a greater retention at the interface of two materials. Finally, the model makes a good reproduction of physical mechanisms observed and appears to be a useful tool for identifying key processes leading to a better understanding of the effect of capillary barrier on nanoparticle transfer in an unsaturated heterogeneous soil. Copyright © 2015 Elsevier B.V. All rights reserved.

Efficacy of In2S3 interfacial recombination barrier layer in PbS quantum-dot-sensitized solar cells

International Nuclear Information System (INIS)

Basit, Muhammad Abdul; Abbas, Muhammad Awais; Bang, Jin Ho; Park, Tae Joo

2015-01-01

In 2 S 3 interfacial recombination barrier layer (IBL) via successive ionic layer adsorption and reaction (SILAR) was successfully employed between PbS quantum dots and mesoporous TiO 2 in quantum-dot-sensitized solar cells (QDSSCs). In 2 S 3 IBL significantly increased the resistance against back electron transfer from TiO 2 , resulting an increment in the photocurrent density (J SC ) for the cell with single SILAR cycle of In 2 S 3 IBL. Further increase in the number of SILAR cycles of In 2 S 3 IBL deteriorated the J SC , whereas open-circuit voltage sustained the increasing trend. Therefore, an optimal photo-conversion efficiency of ∼2.2% was obtained for the cell with 2 SILAR cycles of In 2 S 3 IBL, which strategically reached a value of ∼2.70% after annealing (increased by 40% compared to the control cell without IBL). In 2 S 3 IBL not only improved the recombination resistance and electron life time of the cells, but it also enhanced the photostability of the cells. - Highlights: • In 2 S 3 interfacial recombination barrier layer was deposited on TiO 2 photoanode via SILAR process. • Resistance against back electron transfer from TiO 2 (recombination) increased notably. • Fabricated PbS-QDSSCs were characterized using IPCE, OCVD and EIS techniques. • In 2 S 3 IBL improved chemical capacitance, electron life time and photostability of modified cells. • 2In 2 S 3 IBL showed optimal performance, yielding 40% improvement in PCE after heat treatment.

Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier

Science.gov (United States)

Prajoon, P.; Anuja Menokey, M.; Charles Pravin, J.; Ajayan, J.; Rajesh, S.; Nirmal, D.

2018-04-01

The advantage of InGaN multiple Quantum well (MQW) Light emitting diode (LED) on a SiC substrate with compositionally step graded GaN/InAlN/GaN multi-layer barrier (MLB) is studied. The Internal quantum efficiency, Optical power, current-voltage characteristics, spontaneous emission rate and carrier distribution profile in the active region are investigated using Sentaurus TCAD simulation. An analytical model is also developed to describe the QW carrier injection efficiency, by including carrier leakage mechanisms like carrier overflow, thermionic emission and tunnelling. The enhanced electron confinement, reduced carrier asymmetry, and suppressed carrier overflow in the active region of the MLB MQW LED leads to render a superior performance than the conventional GaN barrier MQW LED. The simulation result also elucidates the efficiency droop behaviour in the MLB MQW LED, it suggests that the efficiency droop effect is remarkably improved when the GaN barrier is replaced with GaN/InAlN/GaN MLB barrier. The analysis shows a dominating behaviour of carrier escape mechanism due to tunnelling. Moreover, the lower lattice mismatching of SiC substrate with GaN epitaxial layer is attributed with good crystal quality and reduced polarization effect, ultimately enhances the optical performance of the LEDs.

On the performance of capillary barriers as landfill cover

Science.gov (United States)

Kämpf, M.; Montenegro, H.

Landfills and waste heaps require an engineered surface cover upon closure. The capping system can vary from a simple soil cover to multiple layers of earth and geosynthetic materials. Conventional design features a compacted soil layer, which suffers from drying out and cracking, as well as root and animal intrusion. Capillary barriers consisting of inclined fine-over-coarse soil layers are investigated as an alternative cover system. Under unsaturated conditions, the textural contrast delays vertical drainage by capillary forces. The moisture that builds up above the contact will flow downdip along the interface of the layers. Theoretical studies of capillary barriers have identified the hydraulic properties of the layers, the inclination angle, the length of the field and the infiltration rate as the fundamental characteristics of the system. However, it is unclear how these findings can lead to design criteria for capillary barriers. To assess the uncertainty involved in such approaches, experiments have been carried out in a 8 m long flume and on large scale test sites (40 m x 15 m). In addition, the ability of a numerical model to represent the relevant flow processes in capillary barriers has been examined.

On the performance of capillary barriers as landfill cover

Directory of Open Access Journals (Sweden)

M. Kämpf

1997-01-01

Full Text Available Landfills and waste heaps require an engineered surface cover upon closure. The capping system can vary from a simple soil cover to multiple layers of earth and geosynthetic materials. Conventional design features a compacted soil layer, which suffers from drying out and cracking, as well as root and animal intrusion. Capillary barriers consisting of inclined fine-over-coarse soil layers are investigated as an alternative cover system. Under unsaturated conditions, the textural contrast delays vertical drainage by capillary forces. The moisture that builds up above the contact will flow downdip along the interface of the layers. Theoretical studies of capillary barriers have identified the hydraulic properties of the layers, the inclination angle, the length of the field and the infiltration rate as the fundamental characteristics of the system. However, it is unclear how these findings can lead to design criteria for capillary barriers. To assess the uncertainty involved in such approaches, experiments have been carried out in a 8 m long flume and on large scale test sites (40 m x 15 m. In addition, the ability of a numerical model to represent the relevant flow processes in capillary barriers has been examined.

Hanford protective barriers program: Status of asphalt barrier studies - FY 1989

International Nuclear Information System (INIS)

Freeman, H.D.; Gee, G.W.

1989-11-01

The Hanford Protective Barrier Program is evaluating alternate barriers to provide a means of meeting stringent water infiltration requirements. One type of alternate barrier being considered is an asphalt-based layer, 1.3 to 15 cm thick. Evaluations of these barriers were initiated in FY 1988, and, based on laboratory studies, two asphalt formulations were selected for further testing in small-tube lysimeters: a hot rubberized asphalt and an admixture of cationic asphalt emulsion and concrete sand containing 24 wt% residual asphalt. Eight lysimeters containing asphalt seals were installed as part of the Small Tube Lysimeter Test Facility on the Hanford Site. Two control lysimeters containing Hanford sand with a surface gravel treatment were also installed for comparison. 5 refs., 13 figs., 1 tab

Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

International Nuclear Information System (INIS)

Vähä-Nissi, Mika; Pitkänen, Marja; Salo, Erkki; Kenttä, Eija; Tanskanen, Anne; Sajavaara, Timo; Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana; Karppinen, Maarit; Harlin, Ali

2014-01-01

Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al 2 O 3 of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al 2 O 3 thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al 2 O 3 • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli

Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Pitkänen, Marja; Salo, Erkki; Kenttä, Eija [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Tanskanen, Anne, E-mail: Anne.Tanskanen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Sajavaara, Timo, E-mail: timo.sajavaara@jyu.fi [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Karppinen, Maarit, E-mail: Maarit.Karppinen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Harlin, Ali [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland)

2014-07-01

Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al{sub 2}O{sub 3} of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al{sub 2}O{sub 3} thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al{sub 2}O{sub 3} • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli.

Surface pre-treatment for barrier coatings on polyethylene terephthalate

Science.gov (United States)

Bahre, H.; Bahroun, K.; Behm, H.; Steves, S.; Awakowicz, P.; Böke, M.; Hopmann, Ch; Winter, J.

2013-02-01

Polymers have favourable properties such as light weight, flexibility and transparency. Consequently, this makes them suitable for food packaging, organic light-emitting diodes and flexible solar cells. Nonetheless, raw plastics do not possess sufficient barrier functionality against oxygen and water vapour, which is of paramount importance for most applications. A widespread solution is to deposit thin silicon oxide layers using plasma processes. However, silicon oxide layers do not always fulfil the requirements concerning adhesion and barrier performance when deposited on films. Thus, plasma pre-treatment is often necessary. To analyse the influence of a plasma-based pre-treatment on barrier performance, different plasma pre-treatments on three reactor setups were applied to a very smooth polyethylene terephthalate film before depositing a silicon oxide barrier layer. In this paper, the influence of oxygen and argon plasma pre-treatments towards the barrier performance is discussed examining the chemical and topological change of the film. It was observed that a short one-to-ten-second plasma treatment can reduce the oxygen transmission rate by a factor of five. The surface chemistry and the surface topography change significantly for these short treatment times, leading to an increased surface energy. The surface roughness rises slowly due to the development of small spots in the nanometre range. For very long treatment times, surface roughness of the order of the barrier layer's thickness results in a complete loss of barrier properties. During plasma pre-treatment, the trade-off between surface activation and roughening of the surface has to be carefully considered.

Surface pre-treatment for barrier coatings on polyethylene terephthalate

International Nuclear Information System (INIS)

Bahre, H; Böke, M; Winter, J; Bahroun, K; Behm, H; Hopmann, Ch; Steves, S; Awakowicz, P

2013-01-01

Polymers have favourable properties such as light weight, flexibility and transparency. Consequently, this makes them suitable for food packaging, organic light-emitting diodes and flexible solar cells. Nonetheless, raw plastics do not possess sufficient barrier functionality against oxygen and water vapour, which is of paramount importance for most applications. A widespread solution is to deposit thin silicon oxide layers using plasma processes. However, silicon oxide layers do not always fulfil the requirements concerning adhesion and barrier performance when deposited on films. Thus, plasma pre-treatment is often necessary. To analyse the influence of a plasma-based pre-treatment on barrier performance, different plasma pre-treatments on three reactor setups were applied to a very smooth polyethylene terephthalate film before depositing a silicon oxide barrier layer. In this paper, the influence of oxygen and argon plasma pre-treatments towards the barrier performance is discussed examining the chemical and topological change of the film. It was observed that a short one-to-ten-second plasma treatment can reduce the oxygen transmission rate by a factor of five. The surface chemistry and the surface topography change significantly for these short treatment times, leading to an increased surface energy. The surface roughness rises slowly due to the development of small spots in the nanometre range. For very long treatment times, surface roughness of the order of the barrier layer's thickness results in a complete loss of barrier properties. During plasma pre-treatment, the trade-off between surface activation and roughening of the surface has to be carefully considered. (paper)

Surface barrier research at the Hanford Site

International Nuclear Information System (INIS)

Gee, G.W.; Ward, A.L.; Fayer, M.J.

1997-01-01

At the DOE Hanford Site, a field-scale prototype surface barrier was constructed in 1994 over an existing waste site as a part of a CERCLA treatability test. The above-grade barrier consists of a fine-soil layer overlying coarse layers of sands, gravels, basalt rock (riprap), and a low permeability asphalt layer. Two sideslope configurations, clean-fill gravel on a 10:1 slope and basalt riprap on a 2:1 slope, were built and are being tested. Design considerations included: constructability; drainage and water balance monitoring, wind and water erosion control and monitoring; surface revegetation and biotic intrusion; subsidence and sideslope stability, and durability of the asphalt layer. The barrier is currently in the final year of a three-year test designed to answer specific questions related to stability and long-term performance. One half of the barrier is irrigated such that the total water applied, including precipitation, is 480 mm/yr (three times the long-term annual average). Each year for the past two years, an extreme precipitation event (71 mm in 8 hr) representing a 1,000-yr return storm was applied in late March, when soil water storage was at a maximum. While the protective sideslopes have drained significant amounts of water, the soil cover (2-m of silt-loam soil overlying coarse sand and rock) has never drained. During the past year there was no measurable surface runoff or wind erosion. This is attributed to extensive revegetation of the surface. In addition, the barrier elevation has shown a small increase of 2 to 3 cm that is attributed to a combination of root proliferation and freeze/thaw activity. Testing will continue through September 1997. Performance data from the prototype barrier will be used by DOE in site-closure decisions at Hanford

Change of the work function and potential barrier transparency of W(100) and GaAs(110) single crystals during removing the inherent surface oxide layer

International Nuclear Information System (INIS)

Asalkhanov, Yu.I.; Saneev, Eh.L.

2002-01-01

Changes of current voltage characteristics of slow monoenergetic electron beam through the surfaces of W(100) and GaAs(100) single crystals have been measured in the process of surface oxide layers elimination. It is shown that work function is decreased and transparency coefficient of surface potential barrier is increased under increasing the temperature of vacuum annealing. Peculiarities of surface potential change under oxide layer elimination in metals and semiconductors are discussed [ru

Tritium permeation barriers for fusion technology

International Nuclear Information System (INIS)

Perujo, A.; Forcey, K.

1994-01-01

An important issue concerning the safety, feasibility and fueling (i.e., tritium breeding ratio and recovery from the breeding blanket) of a fusion reactor is the possible tritium leakages through the structural materials and in particular through those operating at high temperatures. The control of tritium permeation could be a critical factor in determining the viability of a future fusion power reactor. The formation of tritium permeation barriers to prevent the loss of tritium to the coolant by diffusion though the structural material seems to be the most practical method to minimize such losses. Many authors have discussed the formation of permeation barriers to reduce the leakage of hydrogen isotopes through proposed first wall and structural materials. In general, there are two routes for the formation of such a barrier, namely: the growth of oxide layers (e.g., Cr 2 O 3 , Al 2 O 3 , etc.) or the application of surface coatings. Non-metals are the most promising materials from the point of view of the formation of permeation barriers. Oxides such as Al 2 O 3 or Cr 2 O 3 or carbides such as SiC or TiC have been proposed. Amongst the metals only tungsten or gold are sufficiently less permeable than steel to warrant investigation as candidate materials for permeation barriers. It is of course possible to grow oxide layers on steel directly by heating in the atmosphere or under a variety of conditions (first route above). The direct oxidizing is normally done in an environment of open-quotes wet hydrogenclose quotes to promote the growth of chromia on, for example, nickel steels or ternary oxides on 316L to prevent corrosion. The application of surface layers (second route above), offers a greater range of materials for the formation of permeation barriers. In addition to reducing permeation, such layers should be adhesive, resistant to attack by corrosive breeder materials and should not crack during thermal cycling

The role of plants on isolation barrier systems

International Nuclear Information System (INIS)

Link, S.O.; Downs, J.L.; Waugh, W.J.

1994-11-01

Surface barriers are used to isolate buried wastes from the environment. Most have been built for short-term isolation. The need to isolate radioactive wastes from the environment requires that the functional integrity of a barrier be maintained for thousands of years. Barrier function strongly depends on vegetation. Plants reduce wind and water erosion and minimize drainage, but may transport contaminants if roots extend into buried wastes. Our review of the function of plants on surface barriers focuses on the role of plants across mesic to arid environments and gives special consideration to studies done at Hanford. The Hanford Barrier Development Program was created to design and test an earthen cover system to inhibit water infiltration, plant and animal intrusion, and wind and water erosion, while isolating buried wastes for at least 1000 years. Studies at the Hanford have shown that plants will significantly interact with the barrier. Plants transpire soil water back into the atmosphere. Deep-rooted perennials best recycle water; soil water may drain through the root zone of shallow-rooted annuals. Lysimeter studies indicate that a surface layer of fine soil with deep-rooted plants precludes drainage even with three times normal precipitation. The presence of vegetation greatly reduces water and wind erosion, but deep-rooted plants pose a threat of biointrusion and contaminant transport. The Hanford barrier includes a buried rock layer and asphalt layer to prevent biointrusion

Investigation of Al2O3 barrier film properties made by atomic layer deposition onto fluorescent tris-(8-hydroxyquinoline) aluminium molecular films

International Nuclear Information System (INIS)

Maindron, Tony; Aventurier, Bernard; Ghazouani, Ahlem; Jullien, Tony; Rochat, Névine; Simon, Jean-Yves; Viasnoff, Emilie

2013-01-01

Al 2 O 3 films have been deposited at 85 °C by atomic layer deposition onto single 100 nm thick tris-(8-hydroxyquinoline) aluminium (AlQ 3 ) films made onto silicon wafers. It has been found that a thick ALD-deposited Al 2 O 3 layer (> 11 nm) greatly prevents the photo-oxidation of AlQ 3 films when exposed to continuous UV irradiation (350 mW/cm 2 ). Thin Al 2 O 3 thicknesses (< 11 nm) on the contrary yield lower barrier performances. Defects in the Al 2 O 3 layer have been easily observed as non-fluorescent AlQ 3 singularities, or black spots, under UV light on the system Si/AlQ 3 /Al 2 O 3 stored into laboratory conditions (22 °C/50% Relative Humidity (RH)) for long time scale (∼ 2000 h). Accelerated aging conditions in a climatic chamber (85 °C/85% RH) also allow faster visualization of the same defects (168 h). The black spot density grows upon time and the black spot density occurrence rates have been calculated to be 0.024 h −1 ·cm −2 and 0.243 h −1 ·cm −2 respectively for the two testing conditions. A detailed investigation of these defects did show that they cannot be ascribed to the presence of a detectable particle. In that sense they are presumably the consequence of the existence of nanometre-scaled defects which cannot be detected onto fresh samples. Interestingly, an additional overcoating of ebeam-deposited SiO 2 onto the Si/AlQ 3 /Al 2 O 3 sample helps to decrease drastically the black spot density occurrence rates down to 0.004 h −1 ·cm −2 and 0.04 h −1 ·cm −2 respectively for 22 °C/50% RH and 85 °C/85% RH testing conditions. These observations highlight the moisture sensitivity of low temperature ALD-deposited Al 2 O 3 films and confirm the general idea that a single Al 2 O 3 ALD film performs as an ultra-high barrier but needs to be overprotected from water condensation by an additional moisture-stable layer. - Highlights: • Thin Al 2 O 3 films have been deposited by atomic layer deposition onto organic films. �

Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

International Nuclear Information System (INIS)

Schebaum, Oliver; Drewello, Volker; Auge, Alexander; Reiss, Guenter; Muenzenberg, Markus; Schuhmann, Henning; Seibt, Michael; Thomas, Andy

2011-01-01

Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier. - Research highlights: → Transport properties of Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions. → Tunnel barrier consists of MgO, Al-Ox, or MgO/Al-Ox bilayer systems. → Limitation of TMR-ratio in composite barrier tunnel junctions to Al-Ox values. → Limitation indicates that Al-Ox layer is causing incoherent tunneling.

Current-voltage relation for thin tunnel barriers: Parabolic barrier model

DEFF Research Database (Denmark)

Hansen, Kim; Brandbyge, Mads

2004-01-01

We derive a simple analytic result for the current-voltage curve for tunneling of electrons through a thin uniform insulating layer modeled by a parabolic barrier. Our model, which goes beyond the Wentzel–Kramers–Brillouin approximation, is applicable also in the limit of highly transparant...

Barrier Engineered Quantum Dot Infrared Photodetectors

Science.gov (United States)

2015-06-01

251108. 6. Barve, Ajit V., Saumya Sengupta, Jun Oh Kim, John Montoya , Brianna Klein, Mohammad Ali Shirazi, Marziyeh Zamiri et al., "Barrier selection... H . Kim, Z-B. Tian, and Sanjay Krishna. "Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices." (2013

Study on Stress Development in the Phase Transition Layer of Thermal Barrier Coatings

Directory of Open Access Journals (Sweden)

Yijun Chai

2016-09-01

Full Text Available Stress development is one of the significant factors leading to the failure of thermal barrier coating (TBC systems. In this work, stress development in the two phase mixed zone named phase transition layer (PTL, which grows between the thermally grown oxide (TGO and the bond coat (BC, is investigated by using two different homogenization models. A constitutive equation of the PTL based on the Reuss model is proposed to study the stresses in the PTL. The stresses computed with the proposed constitutive equation are compared with those obtained with Voigt model-based equation in detail. The stresses based on the Voigt model are slightly higher than those based on the Reuss model. Finally, a further study is carried out to explore the influence of phase transition proportions on the stress difference caused by homogenization models. Results show that the stress difference becomes more evident with the increase of the PTL thickness ratio in the TGO.

Design, installation, and performance of a multi-layered permeable reactive barrier, Los Alamos National Laboratory

International Nuclear Information System (INIS)

Kaszuba, John P.; Longmire, Patrick A.; Strietelmeier, Elizabeth A.; Taylor, Tammy P.; Den-Baars, Peter S.

2004-01-01

A multi-layered permeable reactive barrier (PRB) has been installed in Mortandad Canyon, on the Pajarito Plateau in the north-central part of LANL, to demonstrate in-situ treatment of a suite of contaminants with dissimilar geochemical properties. The PRB will also mitigate possible vulnerabilities from downgradient contaminant movement within alluvial and deeper perched groundwater. Mortandad Canyon was selected as the location for this demonstration project because the flow of alluvial groundwater is constrained by the geology of the canyon, a large network of monitoring wells already were installed along the canyon reach, and the hydrochemistry and contaminant history of the canyon is well-documented. The PRB uses a funnel-and-gate system with a series of four reactive media cells to immobilize or destroy contaminants present in alluvial groundwater, including strontium-90, plutonium-238,239,240, americium-241, perchlorate, and nitrate. The four cells, ordered by sequence of contact with the groundwater, consist of gravel-sized scoria (for colloid removal); phosphate rock containing apatite (for metals and radionuclides); pecan shells and cotton seed admixed with gravel (bio-barrier, to deplete dissolved oxygen and destroy potential RCRA organic compounds, nitrate and perchlorate); and limestone (pH buffering and anion adsorption). Design elements of the PRB are based on laboratory-scale treatability studies and on a field investigation of hydrologic, geochemical, and geotechnical parameters. The PRB was designed with the following criteria: 1-day residence time within the biobarrier, 10-year lifetime, minimization of surface water infiltration and erosion, optimization of hydraulic capture, and minimization of excavated material requiring disposal. Each layer has been equipped with monitoring wells or ports to allow sampling of groundwater and reactive media, and monitor wells are located immediately adjacent to the up- and down-gradient perimeter of the

Surface layer effects on waste glass corrosion

International Nuclear Information System (INIS)

Feng, X.

1993-01-01

Water contact subjects waste glass to chemical attack that results in the formation of surface alteration layers. Two principal hypotheses have been advanced concerning the effect of surface alteration layers on continued glass corrosion: (1) they act as a mass transport barrier and (2) they influence the chemical affinity of the glass reaction. In general, transport barrier effects have been found to be less important than affinity effects in the corrosion of most high-level nuclear waste glasses. However, they can be important under some circumstances, for example, in a very alkaline solution, in leachants containing Mg ions, or under conditions where the matrix dissolution rate is very low. The latter suggests that physical barrier effect may affect the long-term glass dissolution rate. Surface layers influence glass reaction affinity through the effects of the altered glass and secondary phases on the solution chemistry. The reaction affinity may be controlled by various precipitates and crystalline phases, amorphous silica phases, gel layer, or all the components of the glass. The surface alteration layers influence radionuclide release mainly through colloid formation, crystalline phase incorporation, and gel layer retention. This paper reviews current understanding and uncertainties

Kiwifruit, mucins, and the gut barrier.

Science.gov (United States)

Moughan, Paul J; Rutherfurd, Shane M; Balan, Prabhu

2013-01-01

Kiwifruit has long been regarded in China, where it originated from, for its health properties and particularly in relation to digestion and general gut health. There are a number of physical and chemical properties of the fruit, including its dietary fiber content, the presence of raphides, its high water holding capacity and actinidin content, that suggest that kiwifruit may be effective in influencing gut mucin production and thus enhancing the integrity of the gut barrier. The mucous layer, which comprises mucins and other materials, overlying the mucosal epithelium, is an important component of the gut barrier. The gut barrier plays a crucial role in separating the host from the often noxious external environment. The mucous layer, which covers the entire gastrointestinal tract (GIT), is the front line of innate host defense. There have been few direct studies of the effect of kiwifruit ingestion on mucin production in the GIT, and findings that are available using animal models are somewhat inconsistent. Taking results for digesta mucin content, number of goblet cells, and mucin gene expression, together, it would seem that green kiwifruit and possibly gold kiwifruit do influence gut mucin production, and the kiwifruit as part of a balanced diet may help to maintain the mucous layer and gut barrier. More corroborative experimental evidence is needed, and studies need to be undertaken in humans. Copyright © 2013 Elsevier Inc. All rights reserved.

Homoepitaxial graphene tunnel barriers for spin transport (Presentation Recording)

Science.gov (United States)

Friedman, Adam L.

2015-09-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate homoepitaxial tunnel barrier devices in which graphene serves as both the tunnel barrier and the high mobility transport channel. Beginning with multilayer graphene, we fluorinate or hydrogenate the top layer to decouple it from the bottom layer, so that it serves as a single monolayer tunnel barrier for both charge and spin injection into the lower graphene transport channel. We demonstrate successful tunneling by measuring non-linear IV curves, and a weakly temperature dependent zero bias resistance. We perform lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies (~200 ps). However, we also demonstrate the highest spin polarization efficiencies (~45%) yet measured in graphene-based spin devices [1]. [1] A.L. Friedman, et al., Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport, Nat. Comm. 5, 3161 (2014).

Determination of radiolysis products in gamma-irradiated multilayer barrier food packaging films containing a middle layer of recycled LDPE

International Nuclear Information System (INIS)

Chytiri, Stavroula; Goulas, Antonios E.; Badeka, Anastasia; Riganakos, Kyriakos A.; Petridis, Dimitrios; Kontominas, Michael G.

2008-01-01

Volatile and non-volatile radiolysis products and sensory changes of five-layer food packaging films have been determined after gamma irradiation (5-60 kGy). Barrier films were based on polyamide (PA) and low-density polyethylene (LDPE). Each film contained a middle buried layer of recycled LDPE or 100% virgin LDPE (control samples). Data showed that a large number of radiolysis products were produced such as hydrocarbons, alcohols, carbonyl compounds, carboxylic acid. These compounds were detected in the food simulant after contact with all films even at the lower absorbed doses of 5 and 10 kGy. The type and concentration of radiolysis products increased progressively with radiation dose, while no new compounds were detected as a result of the presence of recycled LDPE. In addition, irradiation dose appears to influence the sensory properties of table water in contact with films

Model assessment of protective barrier designs

International Nuclear Information System (INIS)

Fayer, M.J.; Conbere, W.; Heller, P.R.; Gee, G.W.

1985-11-01

A protective barrier is being considered for use at the Hanford site to enhance the isolation of previously disposed radioactive wastes from infiltrating water, and plant and animal intrusion. This study is part of a research and development effort to design barriers and evaluate their performance in preventing drainage. A fine-textured soil (the Composite) was located on the Hanford site in sufficient quantity for use as the top layer of the protective barrier. A number of simulations were performed by Pacific Northwest Laboratory to analyze different designs of the barrier using the Composite soil as well as the finer-textured Ritzville silt loam and a slightly coarser soil (Coarse). Design variations included two rainfall rates (16.0 and 30.1 cm/y), the presence of plants, gravel mixed into the surface of the topsoil, an impermeable boundary under the topsoil, and moving the waste form from 10 to 20 m from the barrier edge. The final decision to use barriers for enhanced isolation of previously disposed wastes will be subject to decisions resulting from the completion of the Hanford Defense Waste Environmental Impact Statement, which addresses disposal of Hanford defense high-level and transuranic wastes. The one-dimensional simulation results indicate that each of the three soils, when used as the top layer of the protective barrier, can prevent drainage provided plants are present. Gravel amendments to the upper 30 cm of soil (without plants) reduced evaporation and allowed more water to drain

Copper diffusion in TaN-based thin layers

Energy Technology Data Exchange (ETDEWEB)

Nazon, J. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France); Fraisse, B. [Laboratoire Structure, Proprietes et Modelisation des Solides (UMR 8580), Ecole Centrale de Paris, Grande Voie des Vignes, 92295 Chatenay-Malabry Cedex (France); Sarradin, J. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France); Fries, S.G. [SGF Scientific Consultancy, Arndt str.9, D-52064 Aachen (Germany); Tedenac, J.C. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France); Frety, N. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France)], E-mail: Nicole.Frety@univ-montp2.fr

2008-07-15

The diffusion of Cu through TaN-based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayers of 150 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN-based thin layers against Cu diffusion were determined from in situ X-ray diffraction experiments, conducted in the temperature range of 773-973 K. The TaN/Ta/TaN barrier appeared to be more efficient in preventing Cu diffusion than the TaN single layer.

TiO 2 Conduction Band Modulation with In 2 O 3 Recombination Barrier Layers in Solid-State Dye-Sensitized Solar Cells

KAUST Repository

Brennan, Thomas P.

2013-11-21

Atomic layer deposition (ALD) was used to grow subnanometer indium oxide recombination barriers in a solid-state dye-sensitized solar cell (DSSC) based on the spiro-OMeTAD hole-transport material (HTM) and the WN1 donor-π-acceptor organic dye. While optimal device performance was achieved after 3-10 ALD cycles, 15 ALD cycles (∼2 Å of In2O 3) was observed to be optimal for increasing open-circuit voltage (VOC) with an average improvement of over 100 mV, including one device with an extremely high VOC of 1.00 V. An unexpected phenomenon was observed after 15 ALD cycles: the increasing VOC trend reversed, and after 30 ALD cycles VOC dropped by over 100 mV relative to control devices without any In2O3. To explore possible causes of the nonmonotonic behavior resulting from In2O3 barrier layers, we conducted several device measurements, including transient photovoltage experiments and capacitance measurements, as well as density functional theory (DFT) studies. Our results suggest that the VOC gains observed in the first 20 ALD cycles are due to both a surface dipole that pulls up the TiO2 conduction band and recombination suppression. After 30 ALD cycles, however, both effects are reversed: the surface dipole of the In2O3 layer reverses direction, lowering the TiO 2 conduction band, and mid-bandgap states introduced by In 2O3 accelerate recombination, leading to a reduced V OC. © 2013 American Chemical Society.

Large magnetocurrents in double-barrier tunneling transistors

International Nuclear Information System (INIS)

Lee, J.H.; Jun, K.-I.; Shin, K.-H.; Park, S.Y.; Hong, J.K.; Rhie, K.; Lee, B.C.

2005-01-01

Magnetic tunneling transistors (MTT) with double tunneling barriers are fabricated. The structure of the transistor is AFM/FM/I/FM/I/FM/AFM, and ferromagnetic layers serve as the emitter, base and collector. This double-barrier tunneling transistor (DBTT) has an advantage of controlling the potential between the base and collector, compared to the Schottky-barrier-based base and collector of MTT. We found that the collector current density of DBTT is at least 10 3 times larger than that of conventional MTT, since tunneling through AlO x barrier provides much larger current density than that through Schottky barrier

Magnetic tunnel junction device having an intermediate layer

NARCIS (Netherlands)

2001-01-01

A magnetic tunnel junction device has a multi-layer structure including a pair of electrode layers of a ferromagnetic material and a tunnel barrier layer of an insulating material between the electrode layers. In order to realize a low resistance, the multi-layer structure also includes an

Thermopower in double planar tunnel junctions with ferromagnetic barriers and nonmagnetic electrodes

Energy Technology Data Exchange (ETDEWEB)

Wilczyński, M., E-mail: wilczyns@if.pw.edu.pl

2017-01-01

The Seebeck effect is investigated in double planar tunnel junctions consisting of nonmagnetic electrodes and the central layer separated by ferromagnetic barriers. Calculations are performed in the linear response theory using the free-electron model. The thermopower is analyzed as a function of the thickness of the central layer, temperature of the junctions and the relative orientation of magnetic moments of the barriers. It has been found that the thermopower can be significantly enhanced in the junction with special central layer thickness due to electron tunneling by resonant states. The thickness of the central layer for which the thermopower is enhanced depends not only on the temperature of the junction but also on the orientation of magnetic moments in the barriers. - Highlights: • Thermopower in the double planar junctions with magnetic barriers is analyzed. • Thermopower can be enhanced due to the resonant tunneling. • Thermopower depends on the magnetic configuration of the junction.

Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

Science.gov (United States)

Forrest, Stephen R.; Wei, Guodan

2010-07-06

A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

Compressibility effects on the non-linear receptivity of boundary layers to dielectric barrier discharges

Science.gov (United States)

Denison, Marie F. C.

The reduction of drag and aerodynamic heating caused by boundary layer transition is of central interest for the development of hypersonic vehicles. Receptivity to flow perturbation in the form of Tollmien-Schlichting (TS) wave growth often determines the first stage of the transition process, which can be delayed by depositing specific excitations into the boundary layer. Weakly ionized Dielectric Barrier Discharge (DBD) actuators are being investigated as possible sources of such excitations, but little is known today about their interaction with high-speed flows. In this framework, the first part of the thesis is dedicated to a receptivity study of laminar compressible boundary layers over a flat plate by linear stability analysis following an adjoint operator formulation, under DBD representative excitations assumed independent of flow conditions. The second part of the work concentrates on the development of a coupled plasma-Navier and Stokes solver targeted at the study of supersonic flow and compressibility effects on DBD forcing and non-parallel receptivity. The linear receptivity study of quasi-parallel compressible flows reveals several interesting features such as a significant shift of the region of maximum receptivity deeper into the flow at high Mach number and strong wave amplitude reduction compared to incompressible flows. The response to DBD relevant excitation distributions and to variations of the base flow conditions and system length scales follows these trends. Observed absolute amplitude changes and relative sensitivity modifications between source types are related to the evolution of the offset between forcing peak profile and relevant adjoint mode maximum. The analysis highlights the crucial importance of designing and placing the actuator in a way that matches its force field to the position of maximum boundary layer receptivity for the specific flow conditions of interest. In order to address the broad time and length scale spectrum

Electroless Ni-B plating on SiO2 with 3-aminopropyl-triethoxysilane as a barrier layer against Cu diffusion for through-Si via interconnections in a 3-dimensional multi-chip package

International Nuclear Information System (INIS)

Ikeda, Akihiro; Sakamoto, Atsushi; Hattori, Reiji; Kuroki, Yukinori

2009-01-01

Electroless Ni-B was plated on SiO 2 as a barrier layer against Cu diffusion for through-Si via (TSV) interconnections in a 3-dimensional multi-chip package. The electroless Ni-B was deposited on the entire area of the SiO 2 side wall of a deep via with vapor phase pre-deposition of 3-aminopropyl-triethoxysilane on the SiO 2 . The carrier lifetimes in the Si substrates plated with Ni-B/Cu did not decrease with an increase in annealing temperature up to 400 deg. C . The absence of degradation of carrier lifetimes indicates that Cu atoms did not diffuse into the Si through the Ni-B. The advantages of electroless Ni-B (good conformal deposition and forming an effective diffusion barrier against Cu) make it useful as a barrier layer for TSV interconnections in a 3-dimensional multi-chip package

Method for applying a thin film barrier stack to a device with microstructures, and device provided with such a thin film barrier stack

NARCIS (Netherlands)

2005-01-01

A method for applying a thin film barrier stack to a device with microstructures, such as, for instance, an OLED, wherein the thin film barrier stack forms a barrier to at least moisture and oxygen, wherein the stack is built up from a combination of org. and inorg. layers, characterized in that a

High Performance Multi Barrier Thermionic Devices

National Research Council Canada - National Science Library

Vashaee, Daryoosh; Shakouri, Ali

2003-01-01

Thermoelectric transport perpendicular to layers in multiple barrier superlattice structures is investigated theoretically in two limiting cases of no lateral momentum scattering and strong scattering...

Effect of an Interfacial Layer on Electron Tunneling through Atomically Thin Al2O3 Tunnel Barriers.

Science.gov (United States)

Wilt, Jamie; Sakidja, Ridwan; Goul, Ryan; Wu, Judy Z

2017-10-25

Electron tunneling through high-quality, atomically thin dielectric films can provide a critical enabling technology for future microelectronics, bringing enhanced quantum coherent transport, fast speed, small size, and high energy efficiency. A fundamental challenge is in controlling the interface between the dielectric and device electrodes. An interfacial layer (IL) will contain defects and introduce defects in the dielectric film grown atop, preventing electron tunneling through the formation of shorts. In this work, we present the first systematic investigation of the IL in Al 2 O 3 dielectric films of 1-6 Å's in thickness on an Al electrode. We integrated several advanced approaches: molecular dynamics to simulate IL formation, in situ high vacuum sputtering atomic layer deposition (ALD) to synthesize Al 2 O 3 on Al films, and in situ ultrahigh vacuum scanning tunneling spectroscopy to probe the electron tunneling through the Al 2 O 3 . The IL had a profound effect on electron tunneling. We observed a reduced tunnel barrier height and soft-type dielectric breakdown which indicate that defects are present in both the IL and in the Al 2 O 3 . The IL forms primarily due to exposure of the Al to trace O 2 and/or H 2 O during the pre-ALD heating step of fabrication. As the IL was systematically reduced, by controlling the pre-ALD sample heating, we observed an increase of the ALD Al 2 O 3 barrier height from 0.9 to 1.5 eV along with a transition from soft to hard dielectric breakdown. This work represents a key step toward the realization of high-quality, atomically thin dielectrics with electron tunneling for the next generation of microelectronics.

Engineered surface barriers for waste disposal sites: lysimeter facility design and construction

International Nuclear Information System (INIS)

Phillips, S.J.; Ruben, M.S.; Kirkham, R.R.

1988-01-01

A facility to evaluate performance of engineered surface carriers for confinement of buried wastes has been designed, constructed, and operations initiated. The Field Lysimeter Test Facility is located at the US Department of Energy's Hanford Site in Richland, Washington. The facility consists of 18 one-dimensional drainage and weighing lysimeters used to evaluate 7 replicated barrier treatments. Distinct layers of natural earth materials were used to construct layered soil and rock barriers in each lysimeter. These barrier designs are capable in principal of significantly reducing or precluding infiltration of meteoric water through barriers into underlying contaminated zones. This paper summarizes salient facility design and construction features used in testing of the Hanford Site's engineered surface barriers

Simulation of thermo-Elastics Properties of Thermal Barrier Coatings ...

African Journals Online (AJOL)

Thermal barrier coatings are used to protect different parts in compressors and turbines from heat. They are generally composed of two layers, one metallic layer providing resistance to heat corrosion and oxidation, and one thermally insulating ceramic layer. Two different techniques are industrially used. Plasma spray ...

Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures

Science.gov (United States)

Gurram, M.; Omar, S.; Zihlmann, S.; Makk, P.; Li, Q. C.; Zhang, Y. F.; Schönenberger, C.; van Wees, B. J.

2018-01-01

We study room-temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapor deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO2 substrate-based graphene devices, and we obtain a similar order of magnitude of spin relaxation rates for both the Elliott-Yafet and D'Yakonov-Perel' mechanisms. The behavior of ferromagnet/two-layer-CVD-hBN/graphene/hBN contacts ranges from transparent to tunneling due to inhomogeneities in the CVD-hBN barriers. Surprisingly, we find both positive and negative spin polarizations for high-resistance two-layer-CVD-hBN barrier contacts with respect to the low-resistance contacts. Furthermore, we find that the differential spin-injection polarization of the high-resistance contacts can be modulated by dc bias from -0.3 to +0.3 V with no change in its sign, while its magnitude increases at higher negative bias. These features point to the distinctive spin-injection nature of the two-layer-CVD-hBN compared to the bilayer-exfoliated-hBN tunnel barriers.

Characteristics of powdered activated carbon treated with dielectric barrier discharge for electric double-layer capacitors

International Nuclear Information System (INIS)

Tashima, Daisuke; Yoshitama, Hiromu; Sakoda, Tatsuya; Okazaki, Akihito; Kawaji, Takayuki

2012-01-01

Highlights: ► The specific capacitance of the EDLCs could be improved by oxygen plasma treatment. ► 15 s treated EDLCs showed a 20% increase in capacitance relative to untreated EDLCs. ► The plasma treatment yields EDLCs that are suitable for high-energy applications. - Abstract: The electrochemical properties of electric double-layer capacitors (EDLCs) made with plasma-treated powdered activated carbon (treated using a dielectric barrier discharge) were examined using cyclic voltammetry (CV), Cole–Cole plots, and X-ray photoelectron spectroscopy (XPS). The dielectric barrier discharge method, which operates at atmospheric pressure, dramatically reduces the processing time and does not require vacuum equipment, making it a more practical alternative than low-pressure plasma treatment. The experimental data indicate that the specific capacitance of the EDLCs could be improved by oxygen plasma treatment. Capacitance of EDLCs made with activated carbon treated for 15 s showed 193.5 F/g that 20% increase in the specific capacitance relative to untreated EDLCs. This result indicates that the plasma treatment yields EDLCs that are suitable for high-energy applications. The enhancement of capacitance was mainly attributed to an increase in the BET surface area of the activated carbon and the creation of carboxyl groups on the surface of the carbon. The carboxyl groups induced oxidation–reduction reactions in the presence of O 2 which was included in the operation gas. In addition, the carboxyl groups improved the penetration of the electrolyte solution into the carbon electrodes.

Interfacial mixing in double-barrier magnetic tunnel junctions with amorphous NiFeSiB layers

International Nuclear Information System (INIS)

Chun, B.S.; Ko, S.P.; Hwang, J.Y.; Rhee, J.R.; Kim, T.W.; Kim, Y.K.

2007-01-01

Double-barrier magnetic tunnel junctions (DMTJs) comprising Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer (CoFe 4/NiFeSiB 2/CoFe 4, CoFe 10, or NiFeSiB 10)/AlO x /CoFe 7/IrMn 10/Ru 60 (nm) have been examined with an emphasis given on understanding the interfacial mixing effects. The DMTJ, consisted of NiFeSiB, shows low switching field and low bias voltage dependence because the amorphous NiFeSiB has lower M S (=800 emu/cm 3 ) and offers smoother interfaces than polycrystalline CoFe. An interesting feature observed in the CoFe/NiFeSiB/CoFe sandwich free layered DMTJ is the presence of a wavy MR transfer curve at high-resistance region. Because the polycrystalline CoFe usually grows into a columnar structure, diamagnetic CoSi, paramagnetic FeSi, and/or diamagnetic CoB might have been formed during the sputter-deposition process. By employing electron energy loss spectrometry (EELS) and Auger electron spectroscopy (AES), we were able to confirm that Si and B atoms were arranged evenly in the top and bottom portions of AlO x /CoFe interfaces. This means that the interfacial mixing resulted in a distorted magnetization reversal process

Investigation of aluminised steel as a barrier to tritium using accelerator-based and hydrogen permeation techniques

Energy Technology Data Exchange (ETDEWEB)

Sokhi, R S; Forcey, K S; Ross, D K; Earwaker, L G [Birmingham Univ. (UK). School of Physics and Space Research

1989-04-01

Aluminised steel has been proposed as a barrier to tritium permeation in fusion reactors. The properties of these materials as tritium barriers have been studied using accelerator-based techniques and hydrogen permeation methods. The aluminide layers has been characterised by Rutherford backscattering spectroscopy (RBS) and nuclear reaction analysis (NRA) techniques using the 3 MV Dynamitron accelerator based at the School of Physics and Space Research Radiation Centre. The effectiveness of the aluminide layer as a tritium barrier has been measured directly by a conventional permeation apparatus over a range of temperatures. The effect of high temperatures on the structure of the aluminide layer has been examined. Any correlation between the composition of the layer and its effectiveness as a tritium barrier is also discussed. (orig.).

Reducing Water Vapor Permeability of Poly(lactic acid Film and Bottle through Layer-by-Layer Deposition of Green-Processed Cellulose Nanocrystals and Chitosan

Directory of Open Access Journals (Sweden)

Katalin Halász

2015-01-01

Full Text Available Layer-by-layer electrostatic self-assembly technique was applied to improve the barrier properties of poly(lactic acid (PLA films and bottles. The LbL process was carried out by the alternate adsorption of chitosan (CH (polycation and cellulose nanocrystals (CNC produced via ultrasonic treatment. Four bilayers (on each side of chitosan and cellulose nanocrystals caused 29 and 26% improvement in barrier properties in case of films and bottles, respectively. According to the results the LbL process with CH and CNC offered a transparent “green” barrier coating on PLA substrates.

Double internal transport barrier triggering mechanism in tokamak plasmas

International Nuclear Information System (INIS)

Dong, Jiaqi; Mou, Zongze; Long, Yongxing; Mahajan, Swadesh M.

2004-01-01

Sheared flow layers created by energy released in magnetic reconnection processes are studied with the magneto hydrodynamics (MHD), aimed at internal transport barrier (ITB) dynamics. The double tearing mode induced by electron viscosity is investigated and proposed as a triggering mechanism for double internal transport barrier (DITB) observed in tokamak plasmas with non-monotonic safety factor profiles. The quasi-linear development of the mode is simulated and the emphasis is placed on the structure of sheared poloidal flow layers formed in the vicinity of the magnetic islands. For viscosity double tearing modes, it is shown that the sheared flows induced by the mode may reach the level required by the condition for ITB formation. Especially, the flow layers are found to form just outside the magnetic islands. The scaling of the generated velocity with plasma parameters is given. Possible explanation for the experimental observations that the preferential formation of transport barriers in the proximity of low order rational surface is discussed. (author)

Magneto-transport in CdTe/CdMnTe dilute magnetic semiconductor single barrier structures

International Nuclear Information System (INIS)

Lyons, V.R.

1999-03-01

This thesis presents work done on electrical transport through dilute magnetic semiconductor (DMS) single barriers in both zero and non-zero magnetic fields. The fields are applied either perpendicular or parallel to the DMS layers. The main samples under investigation consist of 100 A and 200 A CdTe/Cd 0.8 Mn 0.2 Te/CdTe single barrier heterostructures. In addition electrical characterisation of the non magnetic layers is performed. Current through the barrier is measured as a function of voltage, magnetic field and temperature. A theoretical model is derived in order to calculate the current as a function of barrier height, barrier width, emitting layer carrier concentration, applied bias and temperature. These variables are then treated as fitting parameters and comparisons are made between the calculated and the experimental currents. The barriers are shown to produce non-Ohmic transport. The roles of quantum mechanical tunnelling and thermal activation across the barrier are investigated and shown to be highly mixed. An unexpectedly high degree of tunnelling is found to occur at high temperatures, within the region previously assumed to be dominated by thermal activation. Moreover the barrier height is found to be lower and the width greater than expected. These observations suggest that a high level of Mn diffusion occurs, possibly due to In dopant related effects. This suggestion is validated by the high emitting layer carrier concentration suggested by the fitting. At low temperatures and voltages the thicker barrier sample is shown to contain a parasitic leak path which short-circuits the barrier. This leak may exist in both samples but only becomes dominant where the barriers are sufficiently opaque to the incident carriers. Changes in a magnetic field are expected to be due to sp-d exchange induced giant Zeeman splitting in the barrier and either normal spin splitting or sp-d exchange effects in the emitter regions. The application of a magnetic field is

Process and electrolyte for applying barrier layer anodic coatings

International Nuclear Information System (INIS)

Dosch, R.G.; Prevender, T.S.

1975-01-01

Various metals may be anodized, and preferably barrier anodized, by anodizing the metal in an electrolyte comprising quaternary ammonium compound having a complex metal anion in a solvent containing water and a polar, water soluble organic material. (U.S.)

Robust ultra-thin RuMo alloy film as a seedless Cu diffusion barrier

International Nuclear Information System (INIS)

Hsu, Kuo-Chung; Perng, Dung-Ching; Wang, Yi-Chun

2012-01-01

Highlights: ► A 5 nm-thick Mo added Ru film has been investigated as a Cu diffusion barrier layer. ► RuMo film provides over 175 °C improvement in thermal stability than that of pure Ru layer. ► The 5 nm-thick RuMo film shows excellent barrier performance against Cu diffusion upon 725 °C. - Abstract: This study investigated the properties of 5 nm-thick RuMo film as a Cu diffusion barrier. The sheet resistance variation and X-ray diffraction patterns show that the RuMo alloy film has excellent barrier performance and that it is stable upon annealing at 725 °C against Cu. The transmission electron microscopy micrograph and diffraction patterns show that the RuMo film is an amorphous-like structure, whereas pure Ru film is a nano-crystalline structure. The elements’ depth profiles, analyzed by X-ray photoelectron spectroscopy, indicate no inter-diffusion behavior between the Cu and Si layer, even annealing at 700 °C. Lower leakage current has been achieved from the Cu/barrier/insulator/Si test structure using RuMo film as the barrier layer. A 5 nm ultrathin RuMo film provided two orders of magnitude improvement in leakage current and also exhibited a 175 °C improvement in thermal stability than that of the pure Ru film. It is a potential candidate as a seedless Cu diffusion barrier for advanced Cu interconnects.

Effects of barrier composition and electroplating chemistry on adhesion and voiding in copper/dielectric diffusion barrier films

Energy Technology Data Exchange (ETDEWEB)

Birringer, Ryan P.; Dauskardt, Reinhold H. [Department of Materials Science and Engineering, Stanford University, Durand Building, Stanford, California 94305-4034 (United States); Shaviv, Roey [Novellus Systems Inc., 4000 North First Street, San Jose, California 95134 (United States); Geiss, Roy H.; Read, David T. [National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)

2011-08-15

The effects of electroplating chemistry and dielectric diffusion barrier composition on copper voiding and barrier adhesion are reported. Adhesion was quantified using the four-point bend thin film adhesion technique, and voiding in the Cu films was quantified using scanning electron microscopy. A total of 12 different film stacks were investigated, including three different Cu electroplating chemistries and four different barrier materials (SiN, N-doped SiC, O-doped SiC, and dual-layer SiC). Both plating chemistry and barrier composition have a large effect on interface adhesion and voiding in the Cu film. X-ray photoelectron spectroscopy was used to investigate the segregation of Cu electroplating impurities, such as S and Cl, to the Cu/barrier interface. Secondary ion mass spectrometry was used to quantify oxygen content at the Cu/barrier interface in a subset of samples. This interface oxygen content is correlated with measured adhesion values.

Apparatus and method of manufacture for an imager equipped with a cross-talk barrier

Science.gov (United States)

Pain, Bedabrata (Inventor)

2012-01-01

An imager apparatus and associated starting material are provided. In one embodiment, an imager is provided including a silicon layer of a first conductivity type acting as a junction anode. Such silicon layer is adapted to convert light to photoelectrons. Also included is a semiconductor well of a second conductivity type formed in the silicon layer for acting as a junction cathode. Still yet, a barrier is formed adjacent to the semiconductor well. In another embodiment, a starting material is provided including a first silicon layer and an oxide layer disposed adjacent to the first silicon layer. Also included is a second silicon layer disposed adjacent to the oxide layer opposite the first silicon layer. Such second silicon layer is further equipped with an associated passivation layer and/or barrier.

Effects of gas temperature in the plasma layer on RONS generation in array-type dielectric barrier discharge at atmospheric pressure

Science.gov (United States)

Yoon, Sung-Young; Yi, Changho; Eom, Sangheum; Park, Seungil; Kim, Seong Bong; Ryu, Seungmin; Yoo, Suk Jae

2017-12-01

In this work, we studied the control of plasma-produced species under a fixed gas composition (i.e., ambient air) in a 10 kHz-driven array-type dielectric barrier atmospheric-pressure plasma discharge. Instead of the gas composition, only the gas velocity was controlled. Thus, the plasma-maintenance cost was considerably lower than methods such as external N2 or O2 injection. The plasma-produced species were monitored using Fourier transformed infrared spectroscopy. The discharge properties were measured using a voltage probe, current probe, infrared camera, and optical emission spectroscopy. The results showed that the major plasma products largely depend on the gas temperature in the plasma discharge layer. The gas temperature in the plasma discharge layer was significantly different to the temperature of the ceramic adjacent to the plasma discharge layer, even in the small discharge power density of ˜15 W/cm2 or ˜100 W/cm3. Because the vibrational excitation of N2 was suppressed by the higher gas flow, the major plasma-produced species shifted from NOx in low flow to O3 in high flow.

The formation of tritium permeation barriers by CVD

International Nuclear Information System (INIS)

Forcey, K.S.; Perujo, A.; Reiter, F.; Lolli-Ceroni, P.L.

1993-01-01

The effectiveness as permeation barriers of the following CVD coatings have been investigated: TiC (1 to 2 μm in thickness); a bi-layer of TiN on TiC (3 μm total thickness) and CVD Al 2 O 3 on a TiN/TiC bi-layer. The substrate materials were TZM (a Mo alloy) and 316L stainless steel in the form of discs of diameter 48 mm and thickness 0.1 or 1 mm. Permeation measurements were performed in the temperature range 515-742 K using deuterium at pressures in the range 1-50 kPa. CVD layers were shown to form reasonably effective permeation barriers. At a temperature of 673 K TiC is around 6000 times less permeable to deuterium than 316L stainless steel. (orig.)

Polystyrene films as barrier layers for corrosion protection of copper and copper alloys.

Science.gov (United States)

Románszki, Loránd; Datsenko, Iaryna; May, Zoltán; Telegdi, Judit; Nyikos, Lajos; Sand, Wolfgang

2014-06-01

Dip-coated polystyrene layers of sub-micrometre thickness (85-500nm) have been applied on copper and copper alloys (aluminium brass, copper-nickel 70/30), as well as on stainless steel 304, and produced an effective barrier against corrosion and adhesion of corrosion-relevant microorganisms. According to the dynamic wettability measurements, the coatings exhibited high advancing (103°), receding (79°) and equilibrium (87°) contact angles, low contact angle hysteresis (6°) and surface free energy (31mJ/m(2)). The corrosion rate of copper-nickel 70/30 alloy samples in 3.5% NaCl was as low as 3.2μm/a (44% of that of the uncoated samples), and in artificial seawater was only 0.9μm/a (29% of that of the uncoated samples). Cell adhesion was studied by fluorescence microscopy, using monoculture of Desulfovibrio alaskensis. The coatings not only decreased the corrosion rate but also markedly reduced the number of bacterial cells adhered to the coated surfaces. The PS coating on copper gave the best result, 2×10(3)cells/cm(2) (1% of that of the uncoated control). © 2013 Elsevier B.V. All rights reserved.

How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

International Nuclear Information System (INIS)

Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

2017-01-01

In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium–nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (∼2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs. (paper)

How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

Science.gov (United States)

Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

2017-11-01

In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium-nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (~2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs.

Tree-inception in PMMA with a barrier

International Nuclear Information System (INIS)

Gefle, O S; Lebedev, S M; Pokholkov, Y P; Gockenbach, E; Borsi, H

2004-01-01

The experimental results of a study of the tree-inception phenomenon for three-layer dielectrics in a divergent field are presented in this paper. It is shown that the tree-inception time depends on both the position of the high-permittivity barrier in the insulating gap and the ratio of the permittivities of the barrier material and main dielectric, and that it has a maximum at the optimal barrier position. It is found that the tree-inception length has a minimum value at this barrier position. Good agreement between the coefficient of the local field non-uniformity and the tree-inception time or the initial tree length was found

Investigation of Al{sub 2}O{sub 3} barrier film properties made by atomic layer deposition onto fluorescent tris-(8-hydroxyquinoline) aluminium molecular films

Energy Technology Data Exchange (ETDEWEB)

Maindron, Tony; Aventurier, Bernard [LETI/DOPT/SCOOP/Laboratoire des Composants pour la Visualisation, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France); Ghazouani, Ahlem; Jullien, Tony [LETI/DTSI/SDEP/Laboratoire Dépôt Equipe 2, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France); Rochat, Névine [LETI/DTSI/Service de Caractérisation des Matériaux et Composants, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France); Simon, Jean-Yves; Viasnoff, Emilie [LETI/DOPT/SCOOP/Laboratoire des Composants pour la Visualisation, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France)

2013-12-02

Al{sub 2}O{sub 3} films have been deposited at 85 °C by atomic layer deposition onto single 100 nm thick tris-(8-hydroxyquinoline) aluminium (AlQ{sub 3}) films made onto silicon wafers. It has been found that a thick ALD-deposited Al{sub 2}O{sub 3} layer (> 11 nm) greatly prevents the photo-oxidation of AlQ{sub 3} films when exposed to continuous UV irradiation (350 mW/cm{sup 2}). Thin Al{sub 2}O{sub 3} thicknesses (< 11 nm) on the contrary yield lower barrier performances. Defects in the Al{sub 2}O{sub 3} layer have been easily observed as non-fluorescent AlQ{sub 3} singularities, or black spots, under UV light on the system Si/AlQ{sub 3}/Al{sub 2}O{sub 3} stored into laboratory conditions (22 °C/50% Relative Humidity (RH)) for long time scale (∼ 2000 h). Accelerated aging conditions in a climatic chamber (85 °C/85% RH) also allow faster visualization of the same defects (168 h). The black spot density grows upon time and the black spot density occurrence rates have been calculated to be 0.024 h{sup −1}·cm{sup −2} and 0.243 h{sup −1}·cm{sup −2} respectively for the two testing conditions. A detailed investigation of these defects did show that they cannot be ascribed to the presence of a detectable particle. In that sense they are presumably the consequence of the existence of nanometre-scaled defects which cannot be detected onto fresh samples. Interestingly, an additional overcoating of ebeam-deposited SiO{sub 2} onto the Si/AlQ{sub 3}/Al{sub 2}O{sub 3} sample helps to decrease drastically the black spot density occurrence rates down to 0.004 h{sup −1}·cm{sup −2} and 0.04 h{sup −1}·cm{sup −2} respectively for 22 °C/50% RH and 85 °C/85% RH testing conditions. These observations highlight the moisture sensitivity of low temperature ALD-deposited Al{sub 2}O{sub 3} films and confirm the general idea that a single Al{sub 2}O{sub 3} ALD film performs as an ultra-high barrier but needs to be overprotected from water condensation by an

Hanford Permanent Isolation Barrier Program: Asphalt technology data and status report - FY 1994

Energy Technology Data Exchange (ETDEWEB)

Freeman, H.D.; Romine, R.A.; Zacher, A.H.

1994-09-01

The asphalt layer within the Hanford Permanent Isolation Barrier (HPIB) is an important component of the overall design. This layer provides a RCRA equivalent backup to the overlying earthen layers in the unlikely event that these layers are not able to reduce the infiltration rate to less than 0.05 cm/yr. There is only limited amount of information on using asphalt for a moisture infiltration barrier over the long times required by the HPIB. Therefore, a number of activities are under way, as part of the Barrier Development Program, to obtain data on the performance of asphalt as a moisture barrier in a buried environment over a 1000-year period. These activities include (1) determining RCRA equivalency, (2) measurement of physical properties, (3) measurement of aging characteristics, and (4) relationship to ancient asphalt analogs. During FY 1994 progress was made on all of these activities. Studies were conducted both in the laboratory and on the prototype barrier constructed over the 216-B-57 crib in the 200 East Area on the Hanford Site. This report presents results obtained from the asphalt technology tasks during FY 1994. Also included are updates to planned activities for asphalt analogs and monitoring the asphalt test pad near the prototype barrier. Measurements of hydraulic conductivity on the HMAC portion of the prototype barrier show that the asphalt layers easily meet the RCRA standard of 1 {times} 10{sup -7} cm/s. In-place measurements using a new field falling head technique show an average of 3.66 {times} 10{sup -8} cm/s, while cores taken from the north end of the prototype and measured in a laboratory setup averaged 1.29 {times} 10{sup -9} cm/s. Measurements made on the fluid applied asphalt membrane (polymer-modified asphalt) show an extremely low permeability of less than 1 {times} 10{sup -11} cm/s.

Hanford Permanent Isolation Barrier Program: Asphalt technology data and status report - FY 1994

International Nuclear Information System (INIS)

Freeman, H.D.; Romine, R.A.; Zacher, A.H.

1994-09-01

The asphalt layer within the Hanford Permanent Isolation Barrier (HPIB) is an important component of the overall design. This layer provides a RCRA equivalent backup to the overlying earthen layers in the unlikely event that these layers are not able to reduce the infiltration rate to less than 0.05 cm/yr. There is only limited amount of information on using asphalt for a moisture infiltration barrier over the long times required by the HPIB. Therefore, a number of activities are under way, as part of the Barrier Development Program, to obtain data on the performance of asphalt as a moisture barrier in a buried environment over a 1000-year period. These activities include (1) determining RCRA equivalency, (2) measurement of physical properties, (3) measurement of aging characteristics, and (4) relationship to ancient asphalt analogs. During FY 1994 progress was made on all of these activities. Studies were conducted both in the laboratory and on the prototype barrier constructed over the 216-B-57 crib in the 200 East Area on the Hanford Site. This report presents results obtained from the asphalt technology tasks during FY 1994. Also included are updates to planned activities for asphalt analogs and monitoring the asphalt test pad near the prototype barrier. Measurements of hydraulic conductivity on the HMAC portion of the prototype barrier show that the asphalt layers easily meet the RCRA standard of 1 x 10 -7 cm/s. In-place measurements using a new field falling head technique show an average of 3.66 x 10 -8 cm/s, while cores taken from the north end of the prototype and measured in a laboratory setup averaged 1.29 x 10 -9 cm/s. Measurements made on the fluid applied asphalt membrane (polymer-modified asphalt) show an extremely low permeability of less than 1 x 10 -11 cm/s

Permeability Barrier Generation in the Martian Lithosphere

Science.gov (United States)

Schools, Joe; Montési, Laurent

2015-11-01

Permeability barriers develop when a magma produced in the interior of a planet rises into the cooler lithosphere and crystallizes more rapidly than the lithosphere can deform (Sparks and Parmentier, 1991). Crystallization products may then clog the porous network in which melt is propagating, reducing the permeability to almost zero, i.e., forming a permeability barrier. Subsequent melts cannot cross the barrier. Permeability barriers have been useful to explain variations in crustal thickness at mid-ocean ridges on Earth (Magde et al., 1997; Hebert and Montési, 2011; Montési et al., 2011). We explore here under what conditions permeability barriers may form on Mars.We use the MELTS thermodynamic calculator (Ghiorso and Sack, 1995; Ghiorso et al., 2002; Asimow et al., 2004) in conjunction with estimated Martian mantle compositions (Morgan and Anders, 1979; Wänke and Dreibus, 1994; Lodders and Fegley, 1997; Sanloup et al., 1999; Taylor 2013) to model the formation of permeability barriers in the lithosphere of Mars. In order to represent potential past and present conditions of Mars, we vary the lithospheric thickness, mantle potential temperature (heat flux), oxygen fugacity, and water content.Our results show that permeability layers can develop in the thermal boundary layer of the simulated Martian lithosphere if the mantle potential temperature is higher than ~1500°C. The various Martian mantle compositions yield barriers in the same locations, under matching variable conditions. There is no significant difference in barrier location over the range of accepted Martian oxygen fugacity values. Water content is the most significant influence on barrier development as it reduces the temperature of crystallization, allowing melt to rise further into the lithosphere. Our lower temperature and thicker lithosphere model runs, which are likely the most similar to modern Mars, show no permeability barrier generation. Losing the possibility of having a permeability

Homoepitaxial graphene tunnel barriers for spin transport

Directory of Open Access Journals (Sweden)

Adam L. Friedman

2016-05-01

Full Text Available Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Homoepitaxial graphene tunnel barriers for spin transport

Science.gov (United States)

Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

2016-05-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Undefined role of mucus as a barrier in ocular drug delivery.

Science.gov (United States)

Ruponen, Marika; Urtti, Arto

2015-10-01

Mucus layer covers the ocular surface, and soluble mucins are also present in the tear fluid. After topical ocular drug administration, the drugs and formulations may interact with mucus layer that may act as a barrier in ocular drug delivery. In this mini-review, we illustrate the mucin composition of the ocular surface and discuss the influence of mucus layer on ocular drug absorption. Based on the current knowledge the role of mucus barrier in drug delivery is still undefined. Furthermore, interactions with mucus may prolong the retention of drug formulations on the ocular surface. Mucus may decrease or increase ocular bioavailability depending on the magnitude of its role as barrier or retention site, respectively. Mechanistic studies are needed to clarify the role of mucin in ocular drug delivery. Copyright © 2015 Elsevier B.V. All rights reserved.

Transparent, Ultrahigh-Gas-Barrier Films with a Brick-Mortar-Sand Structure.

Science.gov (United States)

Dou, Yibo; Pan, Ting; Xu, Simin; Yan, Hong; Han, Jingbin; Wei, Min; Evans, David G; Duan, Xue

2015-08-10

Transparent and flexible gas-barrier materials have shown broad applications in electronics, food, and pharmaceutical preservation. Herein, we report ultrahigh-gas-barrier films with a brick-mortar-sand structure fabricated by layer-by-layer (LBL) assembly of XAl-layered double hydroxide (LDH, X=Mg, Ni, Zn, Co) nanoplatelets and polyacrylic acid (PAA) followed by CO2 infilling, denoted as (XAl-LDH/PAA)n-CO2. The near-perfectly parallel orientation of the LDH "brick" creates a long diffusion length to hinder the transmission of gas molecules in the PAA "mortar". Most significantly, both the experimental studies and theoretical simulations reveal that the chemically adsorbed CO2 acts like "sand" to fill the free volume at the organic-inorganic interface, which further depresses the diffusion of permeating gas. The strategy presented here provides a new insight into the perception of barrier mechanism, and the (XAl-LDH/PAA)n-CO2 film is among the best gas barrier films ever reported. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thin-film Nanofibrous Composite Membranes Containing Cellulose or Chitin Barrier Layers Fabricated by Ionic Liquids

Energy Technology Data Exchange (ETDEWEB)

H Ma; B Hsiao; B Chu

2011-12-31

The barrier layer of high-flux ultrafiltration (UF) thin-film nanofibrous composite (TFNC) membranes for purification of wastewater (e.g., bilge water) have been prepared by using cellulose, chitin, and a cellulose-chitin blend, regenerated from an ionic liquid. The structures and properties of regenerated cellulose, chitin, and a cellulose-chitin blend were analyzed with thermogravimetric analysis (TGA) and wide-angle X-ray diffraction (WAXD). The surface morphology, pore size and pore size distribution of TFNC membranes were determined by SEM images and molecular weight cut-off (MWCO) methods. An oil/water emulsion, a model of bilge water, was used as the feed solution, and the permeation flux and rejection ratio of the membranes were investigated. TFNC membranes based on the cellulose-chitin blend exhibited 10 times higher permeation flux when compared with a commercial UF membrane (PAN10, Sepro) with a similar rejection ratio after filtration over a time period of up to 100 h, implying the practical feasibility of such membranes for UF applications.

Decreased Charge Transport Barrier and Recombination of Organic Solar Cells by Constructing Interfacial Nanojunction with Annealing-Free ZnO and Al Layers.

Science.gov (United States)

Liu, Chunyu; Zhang, Dezhong; Li, Zhiqi; Zhang, Xinyuan; Guo, Wenbin; Zhang, Liu; Ruan, Shengping; Long, Yongbing

2017-07-05

To overcome drawbacks of the electron transport layer, such as complex surface defects and unmatched energy levels, we successfully employed a smart semiconductor-metal interfacial nanojunciton in organic solar cells by evaporating an ultrathin Al interlayer onto annealing-free ZnO electron transport layer, resulting in a high fill factor of 73.68% and power conversion efficiency of 9.81%. The construction of ZnO-Al nanojunction could effectively fill the surface defects of ZnO and reduce its work function because of the electron transfer from Al to ZnO by Fermi level equilibrium. The filling of surface defects decreased the interfacial carrier recombination in midgap trap states. The reduced surface work function of ZnO-Al remodulated the interfacial characteristics between ZnO and [6,6]-phenyl C71-butyric acid methyl ester (PC 71 BM), decreasing or even eliminating the interfacial barrier against the electron transport, which is beneficial to improve the electron extraction capacity. The filled surface defects and reduced interfacial barrier were realistically observed by photoluminescence measurements of ZnO film and the performance of electron injection devices, respectively. This work provides a simple and effective method to simultaneously solve the problems of surface defects and unmatched energy level for the annealing-free ZnO or other metal oxide semiconductors, paving a way for the future popularization in photovoltaic devices.

Modelling water vapour permeability through atomic layer deposition coated photovoltaic barrier defects

Energy Technology Data Exchange (ETDEWEB)

Elrawemi, Mohamed, E-mail: Mohamed.elrawemi@hud.ac.uk [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Blunt, Liam; Fleming, Leigh [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Bird, David, E-mail: David.Bird@uk-cpi.com [Centre for Process Innovation Limited, Sedgefield, County Durham (United Kingdom); Robbins, David [Centre for Process Innovation Limited, Sedgefield, County Durham (United Kingdom); Sweeney, Francis [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom)

2014-11-03

Transparent barrier films such as Al{sub 2}O{sub 3} used for prevention of oxygen and/or water vapour permeation are the subject of increasing research interest when used for the encapsulation of flexible photovoltaic modules. However, the existence of micro-scale defects in the barrier surface topography has been shown to have the potential to facilitate water vapour ingress, thereby reducing cell efficiency and causing internal electrical shorts. Previous work has shown that small defects (≤ 3 μm lateral dimension) were less significant in determining water vapour ingress. In contrast, larger defects (≥ 3 μm lateral dimension) seem to be more detrimental to the barrier functionality. Experimental results based on surface topography segmentation analysis and a model presented in this paper will be used to test the hypothesis that the major contributing defects to water vapour transmission rate are small numbers of large defects. The model highlighted in this study has the potential to be used for gaining a better understanding of photovoltaic module efficiency and performance. - Highlights: • A model of water vapour permeation through barrier defects is presented. • The effect of the defects on the water vapour permeability is investigated. • Defect density correlates with water vapour permeability. • Large defects may dominate the permeation properties of the barrier film.

Electron microscopy characterization of a molybdenum diffusion barrier in metallizations for chip carriers

International Nuclear Information System (INIS)

He Anqiang; Ivey, Douglas G.

2004-01-01

Mo layers have been studied as potential diffusion barriers for Au-Sn solder bonds in micro/optoelectronic device packaging. Solder was electroplated as alternating AuSn and Au 5 Sn multi-layers on wafers covered with Ti as an adhesion layer, followed by Mo as the diffusion barrier and Au as a capping layer. Samples were annealed at 340-420 deg. C for as long as 20 min. Scanning and transmission electron microscopy (SEM and TEM) were utilized to characterize interfacial reactions. Mo was found to be metallurgically stable, relative to the Au-Sn solder and the other metallization components, at temperatures up to at least 420 deg. C. However, the effectiveness of Mo as a barrier can be compromised by two factors. One of these is related to surface roughness associated with AlN or Al 2 O 3 carriers. Non-uniform metallization coverage can lead to breaks in the Mo barrier, resulting in contact between the carrier and molten solder during bonding applications. In addition, thermal stresses generated during heating and cooling can lead to cracking and spalling of the Mo and adhesion layers, exposing the carrier material to molten solder. Pre-annealing can help to relieve the thermal stresses and prevent spalling

Diffusion barrier performances of thin Mo, Mo-N and Mo/Mo-N films between Cu and Si

International Nuclear Information System (INIS)

Song Shuangxi; Liu Yuzhang; Mao Dali; Ling Huiqin; Li Ming

2005-01-01

In this work, we have studied the diffusion barrier performances of Mo, Mo-N and Mo/Mo-N metallization layers deposited by sputtering Mo in Ar/N 2 atmospheres, respectively. Samples were subsequently annealed at different temperatures ranging from 400 to 800 deg C in vacuum condition. The film properties and their suitability as diffusion barriers and protective coatings in silicon devices were characterized using four-point probe measurement, X-ray diffractometry, scanning electron microscopy, Auger electron spectroscopy and transmission electron microscopy analyses. Experimental results revealed that the Mo (20 nm)/Mo-N (30 nm) layer was able to prevent the diffusion reaction between Cu and Si substrate after being annealed at 600 deg C for 30 min. The adhesion between layers and the content of N atoms are the key parameters to improve the properties of Mo-based barrier materials. The Mo layer interposed between Cu and Mo-N diluted the high nitrogen concentration of the barrier and so enhanced the barrier performances

Growth of intermetallics between Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layered structures

International Nuclear Information System (INIS)

Horváth, Barbara; Illés, Balázs; Shinohara, Tadashi

2014-01-01

Intermetallic growth mechanisms and rates are investigated in Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layer systems. An 8–10 μm thick Sn surface finish layer was electroplated onto a Cu substrate with a 1.5–2 μm thick Ni or Ag barrier layer. In order to induce intermetallic layer growth, the samples were aged in elevated temperatures: 50 °C and 125 °C. Intermetallic layer growth was checked by focused ion beam–scanning ion microscope. The microstructures and chemical compositions of the intermetallic layers were observed with a transmission electron microscope. It has been found that Ni barrier layers can effectively block the development of Cu 6 Sn 5 intermetallics. The intermetallic growth characteristics in the Sn/Cu and Sn/Ni/Cu systems are very similar. The intermetallic layer grows towards the Sn layer and forms a discrete layer. Differences were observed only in the growth gradients and surface roughness of the intermetallic layer which may explain the different tin whiskering properties. It was observed that the intermetallic layer growth mechanisms are completely different in the Ag barrier layers compared to the Ni layers. In the case of Sn/Ag/Cu systems, the Sn and Cu diffused through the Ag layer, formed Cu 6 Sn 5 intermetallics mainly at the Sn/Ag interface and consumed the Ag barrier layer. - Highlights: • Intermetallic growth was characterised in Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layer systems. • Intermetallic growth rates and roughness are similar in the Sn/Cu and Sn/Ni/Cu systems. • Sn/Ni/Cu system contains the following intermetallic layer structure Sn–Ni3Sn4–Ni3Sn2–Ni3Sn–Ni. • In the case of Sn/Ag/Cu systems the Sn and Cu diffusion consumes the Ag barrier layer. • When Cu reaches the Sn/Ag interface a large amount of Cu 6 Sn 5 forms above the Ag layer

Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

Energy Technology Data Exchange (ETDEWEB)

Park, Jae-Hyung; Han, Dong-Suk; Kang, You-Jin [Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Shin, So-Ra; Park, Jong-Wan, E-mail: jwpark@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

2014-01-15

The authors synthesized a Cu–Al alloy by employing alternating atomic layer deposition (ALD) surface reactions using Cu and Al precursors, respectively. By alternating between these two ALD surface chemistries, the authors fabricated ALD Cu–Al alloy. Cu was deposited using bis(1-dimethylamino-2-methyl-2-butoxy) copper as a precursor and H{sub 2} plasma, while Al was deposited using trimethylaluminum as the precursor and H{sub 2} plasma. The Al atomic percent in the Cu–Al alloy films varied from 0 to 15.6 at. %. Transmission electron microscopy revealed that a uniform Al-based interlayer self-formed at the interface after annealing. To evaluate the barrier properties of the Al-based interlayer and adhesion between the Cu–Al alloy film and SiO{sub 2} dielectric, thermal stability and peel-off adhesion tests were performed, respectively. The Al-based interlayer showed similar thermal stability and adhesion to the reference Mn-based interlayer. Our results indicate that Cu–Al alloys formed by alternating ALD are suitable seed layer materials for Cu interconnects.

Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

International Nuclear Information System (INIS)

Park, Jae-Hyung; Han, Dong-Suk; Kang, You-Jin; Shin, So-Ra; Park, Jong-Wan

2014-01-01

The authors synthesized a Cu–Al alloy by employing alternating atomic layer deposition (ALD) surface reactions using Cu and Al precursors, respectively. By alternating between these two ALD surface chemistries, the authors fabricated ALD Cu–Al alloy. Cu was deposited using bis(1-dimethylamino-2-methyl-2-butoxy) copper as a precursor and H 2 plasma, while Al was deposited using trimethylaluminum as the precursor and H 2 plasma. The Al atomic percent in the Cu–Al alloy films varied from 0 to 15.6 at. %. Transmission electron microscopy revealed that a uniform Al-based interlayer self-formed at the interface after annealing. To evaluate the barrier properties of the Al-based interlayer and adhesion between the Cu–Al alloy film and SiO 2 dielectric, thermal stability and peel-off adhesion tests were performed, respectively. The Al-based interlayer showed similar thermal stability and adhesion to the reference Mn-based interlayer. Our results indicate that Cu–Al alloys formed by alternating ALD are suitable seed layer materials for Cu interconnects

Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

Science.gov (United States)

Skromme, B. J.; Luckowski, E.; Moore, K.; Bhatnagar, M.; Weitzel, C. E.; Gehoski, T.; Ganser, D.

2000-03-01

Electrical properties, including current-voltage (I-V) and capacitance-voltage (C-V) characteristics, have been measured on a large number of Ti, Ni, and Pt-based Schottky barrier diodes on 4H-SiC epilayers. Various nonideal behaviors are frequently observed, including ideality factors greater than one, anomalously low I-V barrier heights, and excess leakage currents at low forward bias and in reverse bias. The nonidealities are highly nonuniform across individual wafers and from wafer to wafer. We find a pronounced linear correlation between I-V barrier height and ideality factor for each metal, while C-V barrier heights remain constant. Electron beam induced current (EBIC) imaging strongly suggests that the nonidealities result from localized low barrier height patches. These patches are related to discrete crystal defects, which become visible as recombination centers in the EBIC images. Alternative explanations involving generation-recombination current, uniform interfacial layers, and effects related to the periphery are ruled out.

Influence of a BGaN back-barrier on DC and dynamic performances of an AlGaN/GaN HEMT: simulation study

Science.gov (United States)

Guenineche, Lotfi; Hamdoune, Abdelkader

2016-05-01

In this paper, we study the effect of a BGaN back-barrier on the DC and RF performances of an AlGaN/GaN high electron mobility transistor. Using TCAD Silvaco, we examine some variations of thickness and boron concentration in the BGaN back-barrier layer. First, we fix the thickness of the back-barrier layer at 5 nm and we vary the concentration of the boron in BGaN from 1% to 4%. Second, we fix the concentration of the boron in BGaN to only 2% and we vary the thickness of the back-barrier layer from 20 nm to 110 nm. The BGaN back-barrier layer creates an electrostatic barrier under the channel layer and improves the performances of the device by improving the electron confinement in the two-dimensional electron gas. The DC and AC characteristics are improved, respectively, by a greater concentration of boron and by a thicker BGaN layer. For 4% boron concentration and 5 nm thick back-barrier layer, we obtain a maximum drain current of 1.1 A, a maximum transconductance of 480 mS mm-1, a cut-off frequency of 119 GHz, and a maximum oscillation frequency of 311 GHz.

A method of producing a multilayer barrier structure for a solid oxide fuel cell

DEFF Research Database (Denmark)

2010-01-01

The present invention provides a method of producing a multilayer barrier structure for a solid oxide cell stack, comprising the steps of: - providing a metal interconnect, wherein the metal interconnect is a ferritic stainless steel layer; - applying a first metal oxide layer on said metal...... oxide; and - reacting the metal oxide in said first metal oxide layer with the metal of said metal interconnect during the SOC-stack initialisation, and a solid oxide stack comprising an anode contact layer and support structure, an anode layer, an electrolyte layer, a cathode layer, a cathode contact...... layer, a metallic interconnect, and a multilayer barrier structure which is obtainable by the above method and through an initialisation step, which is carried out under controlled conditions for atmosphere composition and current load, which depends on the layer composition facilitating the formation...

Horizontal Acoustic Barriers for Protection from Seismic Waves

Directory of Open Access Journals (Sweden)

Sergey V. Kuznetsov

2011-01-01

Full Text Available The basic idea of a seismic barrier is to protect an area occupied by a building or a group of buildings from seismic waves. Depending on nature of seismic waves that are most probable in a specific region, different kinds of seismic barriers can be suggested. Herein, we consider a kind of a seismic barrier that represents a relatively thin surface layer that prevents surface seismic waves from propagating. The ideas for these barriers are based on one Chadwick's result concerning nonpropagation condition for Rayleigh waves in a clamped half-space, and Love's theorem that describes condition of nonexistence for Love waves. The numerical simulations reveal that to be effective the length of the horizontal barriers should be comparable to the typical wavelength.

Surface stability test plan for protective barriers

International Nuclear Information System (INIS)

Ligotke, M.W.

1989-01-01

Natural-material protective barriers for long-term isolation of buried waste have been identified as integral components of a plan to isolate a number of Hanford defense waste sites. Standards currently being developed for internal and external barrier performance will mandate a barrier surface layer that is resistant to the eolian erosion processes of wind erosion (deflation) and windborne particle deposition (formation of sand dunes). Thus, experiments are needed to measure rates of eolian erosion processes impacting those surfaces under different surface and climatological conditions. Data from these studies will provide information for use in the evaluation of selected surface layers as a means of providing stable cover over waste sites throughout the design life span of protective barriers. The multi-year test plan described in this plan is directed at understanding processes of wind erosion and windborne particle deposition, providing measurements of erosion rates for models, and suggesting construction materials and methods for reducing the effect of long-term eolian erosion on the barrier. Specifically, this plan describes possible methods to measure rates of eolian erosion, including field and laboratory procedure. Advantages and disadvantages of laboratory (wind tunnel) tests are discussed, and continued wind tunnel tests are recommended for wind erosion studies. A comparison between field and wind tunnel erosive forces is discussed. Plans for testing surfaces are described. Guidance is also presented for studying the processes controlling sand dune and blowout formation. 24 refs., 7 figs., 3 tabs

An investigation into workability of the cover layer materials

International Nuclear Information System (INIS)

Ninomiya, Koji; Yoshizawa, Hideaki; Sato, Yasushi; Onishi, Toshimitsu

2004-02-01

It was the main object of this research to gather basic data on the quality of the constructive performance of a cover layer material as the Radon Barrier Layer through the 'An Investigation into Workability of the Cover Layer Materials' to be applied for the capping of uranium mill tailings and waste rock yard at Ningyo-toge Environmental Engineering Center. In consideration of the business scale, operation efficiency and cost performance, etc, we selected the decomposed granite as a base soil, bentonite as an additive, and a Twister(rotary type comprehensive unit for grinding and mixing) as a mixer for this research. Based on those materials and a mixer, we actually made the cover layer (radon barrier) and measured the permeability, N 2 ventilation, strength of the layer, using as a parameter different types of bentonite and different bentonite/sand mixture rations. According to the permeability test results, permeability coefficient proved to be stand at below 1x10 -9 m/s, regardless of any combination of bentonite/sand mixture ratios made with the twister. Through a series of laboratory tests, taking into consideration such variation factors as quality variation of the cover layer, base soil and additive, we found out the optimum phase of combination, which are the 7wt% bentonite/sand mixture in case of Volclay; and 16wt% in case Redhill. N 2 ventilation tests were also carried out, using as a parameter the degree of moisture saturation of cover layer material. Test results showed that the gas ventilation is sensitive to changes of the degree of the saturation, and that under the conditions of moisture saturation of over 90%, the coefficient of N 2 ventilation stands at below 1x10 -10 m/s, under which conditions the radon barrier will work out in an efficient way. Lastly, in order to secure the long-term safety of the radon barrier, we described the directions of future investigations and studies, including the necessity of gathering technical data on the

Defective channels lead to an impaired skin barrier.

Science.gov (United States)

Blaydon, Diana C; Kelsell, David P

2014-10-15

Channels are integral membrane proteins that form a pore, allowing the passive movement of ions or molecules across a membrane (along a gradient), either between compartments within a cell, between intracellular and extracellular environments or between adjacent cells. The ability of cells to communicate with one another and with their environment is a crucial part of the normal physiology of a tissue that allows it to carry out its function. Cell communication is particularly important during keratinocyte differentiation and formation of the skin barrier. Keratinocytes in the skin epidermis undergo a programme of apoptosis-driven terminal differentiation, whereby proliferating keratinocytes in the basal (deepest) layer of the epidermis stop proliferating, exit the basal layer and move up through the spinous and granular layers of the epidermis to form the stratum corneum, the external barrier. Genes encoding different families of channel proteins have been found to harbour mutations linked to a variety of rare inherited monogenic skin diseases. In this Commentary, we discuss how human genetic findings in aquaporin (AQP) and transient receptor potential (TRP) channels reveal different mechanisms by which these channel proteins function to ensure the proper formation and maintenance of the skin barrier. © 2014. Published by The Company of Biologists Ltd.

Investigation of oxidation resistance of Ni-Ti film used as oxygen diffusion barrier layer

International Nuclear Information System (INIS)

Liu, B.T.; Yan, X.B.; Zhang, X.; Zhou, Y.; Guo, Y.N.; Bian, F.; Zhang, X.Y.

2009-01-01

Ni-Ti films prepared at 10 W and 70 W by rf magnetron sputtering are investigated as the oxygen diffusion barrier layer, it is found that crystallinity of Ni-Ti film does not greatly depend on the deposition power. X-ray photoelectron spectroscopy indicates that Ni is still in the form of metallic state from the binding energies of both Ni 2p 3/2 and Ni 2p 1/2 spectra for the sample with 10 W prepared Ni-Ti, however, Ni is oxidized for 70 W prepared Ni-Ti film. Moreover, the (La 0.5 Sr 0.5 )CoO 3 /Pb(Zr 0.40 Ti 0.60 )O 3 /(La 0.5 Sr 0.5 )CoO 3 capacitor grown on high power prepared Ni-Ti film is leaky, however, the capacitor on low power prepared Ni-Ti film possesses very promising physical properties (i.e. remnant polarization of ∼27 μC/cm 2 at 5 V and maximum dielectric constant of 940). Leakage current density of the capacitor grown on low power prepared Ni-Ti film is further investigated, it meets ohmic behavior ( 1.0 V).

Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

Energy Technology Data Exchange (ETDEWEB)

Jie, Qing; Ren, Zhifeng; Chen, Gang

2017-08-01

Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.

Engineered Barrier Testing at the INEEL Engineered Barriers Test Facility: FY-1997 and FY-1998

International Nuclear Information System (INIS)

Keck, K. N.; Porro, I.

1998-01-01

Engineered barriers of two designs are being tested at the Engineered Barriers Test Facility (EBTF) at the Idaho National Engineering and Environmental Laboratory. This report describes the test facility, barrier designs, and instruments used to monitor the test plots. Wetting tests conducted on the test plots in FY-97 are described and data collected from monitoring the test plots before, during and after the wetting tests are used to evaluate the performance of the covers during FY-97 and FY-98. Replicates of two engineered barrier designs were constructed in the EBTF cells. The first design comprises a thick, vegetated soil cover. The second design incorporates a capillary/biobarrier within the vegtated soil cover. The capillary barrier uses the textural break between an upper, fine textured soil and a lower, coarser-textured gravel layer to inhibit drainage under unsaturated conditions while increasing soil moisture storage in the root zone. Evaporation and transpiration by plants (although the test plots have not yet been vegetated) are used to recycle water stored in the soil back to the atmosphere. A geotextile fabric is used to maintain separation of the soil and gravel layers. A thick layer of cobbles beneath the gravel layer serves as a biobarrier to prevent intrusion of plant roots and burrowing animals into underlying waste (there is no waste in the test plots). Each test plot was instrumented with time domain reflectometry probes and neutron probe access tubes to measure moisture contents, tensiometers, heat dissipation sensors, and thermocouple psychrometers to measure matric potentials, thermocouples to measure soil temperature, and ion-exchange resin beads to monitor tracer movement. Each drainage sump is equipped with a tipping bucket instrument and pressure transducer to measure drainage. Precipitation is measured using a heated rain gauge located at the EBTF. Instrument calibration equation coefficients are presented, and data reduction

Atomic layer deposition of Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/TiO{sub 2} barrier coatings to reduce the water vapour permeability of polyetheretherketone

Energy Technology Data Exchange (ETDEWEB)

Ahmadzada, Tamkin, E-mail: tahm4852@uni.sydney.edu.au [School of Aerospace, Mechanical and Mechatronic Engineering, University of Sydney, NSW 2006 (Australia); McKenzie, David R.; James, Natalie L.; Yin, Yongbai [School of Physics, University of Sydney, NSW 2006 (Australia); Li, Qing [School of Aerospace, Mechanical and Mechatronic Engineering, University of Sydney, NSW 2006 (Australia)

2015-09-30

We demonstrate significantly enhanced barrier properties of polyetheretherketone (PEEK) against water vapour penetration by depositing Al{sub 2}O{sub 3} or Al{sub 2}O{sub 3}/TiO{sub 2} nanofilms grown by atomic layer deposition (ALD). Nanoindentation analysis revealed good adhesion strength of a bilayer Al{sub 2}O{sub 3}/TiO{sub 2} coating to PEEK, while the single layer Al{sub 2}O{sub 3} coating displayed flaking and delamination. We identified three critical design parameters for achieving the optimum barrier properties of ALD Al{sub 2}O{sub 3}/TiO{sub 2} coatings on PEEK. These are a minimum total thickness dependent on the required water vapour transmission rate, the use of an Al{sub 2}O{sub 3}/TiO{sub 2} bilayer coating and the application of the coating to both sides of the PEEK film. Using these design parameters, we achieved a reduction in moisture permeability of PEEK of over two orders of magnitude while maintaining good adhesion strength of the polymer–thin film system. - Highlights: • Atomic layer deposition of Al{sub 2}O{sub 3}/TiO{sub 2} coatings reduced water vapour permeability. • Bilayer coatings reduced the permeability more than single layer coatings. • Bilayer coatings displayed higher adhesion strength than the single layer coatings. • Double-sided coatings performed better than single-sided coatings. • Correlation was found between total thickness and reduced water vapour permeability.

Layer-dependent band alignment and work function of few-layer phosphorene.

Science.gov (United States)

Cai, Yongqing; Zhang, Gang; Zhang, Yong-Wei

2014-10-20

Using first-principles calculations, we study the electronic properties of few-layer phosphorene focusing on layer-dependent behavior of band gap, work function band alignment and carrier effective mass. It is found that few-layer phosphorene shows a robust direct band gap character, and its band gap decreases with the number of layers following a power law. The work function decreases rapidly from monolayer (5.16 eV) to trilayer (4.56 eV), and then slowly upon further increasing the layer number. Compared to monolayer phosphorene, there is a drastic decrease of hole effective mass along the ridge (zigzag) direction for bilayer phosphorene, indicating a strong interlayer coupling and screening effect. Our study suggests that 1). Few-layer phosphorene with a layer-dependent band gap and a robust direct band gap character is promising for efficient solar energy harvest. 2). Few-layer phosphorene outperforms monolayer counterpart in terms of a lighter carrier effective mass, a higher carrier density and a weaker scattering due to enhanced screening. 3). The layer-dependent band edges and work functions of few-layer phosphorene allow for modification of Schottky barrier with enhanced carrier injection efficiency. It is expected that few-layer phosphorene will present abundant opportunities for a plethora of new electronic applications.

Summary report on close-coupled subsurface barrier technology: Initial field trials to full-scale demonstration

International Nuclear Information System (INIS)

Heiser, J.H.

1997-09-01

The primary objective of this project was to develop and demonstrate the installation and measure the performance of a close-coupled barrier for the containment of subsurface waste or contaminant migration. A close-coupled barrier is produced by first installing a conventional, low-cost, cement-grout containment barrier followed by a thin lining of a polymer grout. The resultant barrier is a cement-polymer composite that has economic benefits derived from the cement and performance benefits from the durable and resistant polymer layer. The technology has matured from a regulatory investigation of the issues concerning the use of polymers to laboratory compatibility and performance measurements of various polymer systems to a pilot-scale, single column injection at Sandia to full-scale demonstration. The feasibility of the close-coupled barrier concept was proven in a full-scale cold demonstration at Hanford, Washington and then moved to the final stage with a full-scale demonstration at an actual remediation site at Brookhaven National Laboratory (BNL). At the Hanford demonstration the composite barrier was emplaced around and beneath a 20,000 liter tank. The secondary cement layer was constructed using conventional jet grouting techniques. Drilling was completed at a 45 degree angle to the ground, forming a cone-shaped barrier. The primary barrier was placed by panel jet-grouting with a dual-wall drill stem using a two part polymer grout. The polymer chosen was a high molecular weight acrylic. At the BNL demonstration a V-trough barrier was installed using a conventional cement grout for the secondary layer and an acrylic-gel polymer for the primary layer. Construction techniques were identical to the Hanford installation. This report summarizes the technology development from pilot- to full-scale demonstrations and presents some of the performance and quality achievements attained

Demonstration of close-coupled barriers for subsurface containment of buried waste

International Nuclear Information System (INIS)

Dwyer, B.P.

1996-05-01

A close-coupled barrier is produced by first installing a conventional cement grout curtain followed by a thin inner lining of a polymer grout. The resultant barrier is a cement polymer composite that has economic benefits derived from the cement and performance benefits from the durable and resistant polymer layer. Close-coupled barrier technology is applicable for final, interim, or emergency containment of subsurface waste forms. Consequently, when considering the diversity of technology application, the construction emplacement and material technology maturity, general site operational requirements, and regulatory compliance incentives, the close-coupled barrier system provides an alternative for any hazardous or mixed waste remediation plan. This paper discusses the installation of a close-coupled barrier and the subsequent integrity verification. The demonstration was installed at a benign site at the Hanford Geotechnical Test Facility, 400 Area, Hanford, Washington. The composite barrier was emplaced beneath a 7,500 liter tank. The tank was chosen to simulate a typical DOE Complex waste form. The stresses induced on the waste form were evaluated during barrier construction. The barrier was constructed using conventional jet grouting techniques. Drilling was completed at a 45 degree angle to the ground, forming a conical shaped barrier with the waste form inside the cone. Two overlapping rows of cylindrical cement columns were grouted in a honeycomb fashion to form the secondary backdrop barrier layer. The primary barrier, a high molecular weight polymer manufactured by 3M Company, was then installed providing a relatively thin inner liner for the secondary barrier. The primary barrier was emplaced by panel jet grouting with a dual wall drill stem, two phase jet grouting system

Yttria-stabilized zirkonia / gadolinium zirconate double-layer plasma-sprayed thermal barrier coating systems (TBCs)

International Nuclear Information System (INIS)

Bakan, Emine

2015-01-01

Thermal barrier coating (TBC) research and development is driven by the desirability of further increasing the maximum inlet temperature in a gas turbine engine. A number of new top coat ceramic materials have been proposed during the last decades due to limited temperature capability (1200 C) of the state-of-the-art yttria-stabilized zirconia (7 wt. % Y 2 O 3 -ZrO 2 , YSZ) at long term operation. Zirconate pyrochlores of the large lanthanides((Gd → La) 2 Zr 2 O 7 ) have been particularly attractive due to their higher temperature phase stability than that of the YSZ. Nonetheless, the issues related with the implementation of pyrochlores such as low fracture toughness and formation of deleterious interphases with thermally grown oxide (TGO, Al 2 O 3 ) were reported. The implication was the requirement of an interlayer between the pyrochlores and TGO, which introduced double-layer systems to the TBC literature. Furthermore, processability issues of pyrochlores associated with the different evaporation rates of lanthanide oxides and zirconia resulting in unfavorable composition variations in the coatings were addressed in different studies. After all, although the material properties are available, there is a paucity of data in the literature concerning the properties of the coatings made of pyrochlores. From the processability point of view the most reported pyrochlore is La 2 Zr 2 O 7 . Hence, the goal of this research was to investigate plasma-sprayed Gd 2 Zr 2 O 7 (GZO) coatings and YSZ/GZO double-layer TBC systems. Three main topics were examined based on processing, performance and properties: (i) the plasma spray processing of the GZO and its impact on the microstructural and compositional properties of the GZO coatings; (ii) the cycling lifetime of the YSZ/GZO double-layer systems under thermal gradient at a surface temperature of 1400 C; (iii) the properties of the GZO and YSZ coatings such as thermal conductivity, coefficient of thermal expansion as well

Intestinal epithelial barrier function and tight junction proteins with heat and exercise

DEFF Research Database (Denmark)

Dokladny, Karol; Zuhl, Micah N; Moseley, Pope L

2016-01-01

A single layer of enterocytes and tight junctions (intercellular multiprotein complexes) form the intestinal epithelial barrier that controls transport of molecules through transcellular and paracellular pathways. A dysfunctional or "leaky" intestinal tight junction barrier allows augmented perme...

Light-emitting diodes based on solution-processed nontoxic quantum dots: oxides as carrier-transport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer.

Science.gov (United States)

Bhaumik, Saikat; Pal, Amlan J

2014-07-23

We report fabrication and characterization of solution-processed quantum dot light-emitting diodes (QDLEDs) based on a layer of nontoxic and Earth-abundant zinc-diffused silver indium disulfide (AIZS) nanoparticles as an emitting material. In the QDLEDs fabricated on indium tin oxide (ITO)-coated glass substrates, we use layers of oxides, such as graphene oxide (GO) and zinc oxide (ZnO) nanoparticles as a hole- and electron-transport layer, respectively. In addition, we introduce a layer of MoO3 nanoparticles as a hole-inject one. We report a comparison of the characteristics of different device architectures. We show that an inverted device architecture, ITO/ZnO/AIZS/GO/MoO3/Al, yields a higher electroluminescence (EL) emission, compared to direct ones, for three reasons: (1) the GO/MoO3 layers introduce barriers for electrons to reach the Al electrode, and, similarly, the ZnO layers acts as a barrier for holes to travel to the ITO electrode; (2) the introduction of a layer of MoO3 nanoparticles as a hole-inject layer reduces the barrier height for holes and thereby balances charge injection in the inverted structure; and (3) the wide-bandgap zinc oxide next to the ITO electrode does not absorb the EL emission during its exit from the device. In the QDLEDs with oxides as carrier inject and transport layers, the EL spectrum resembles the photoluminescence emission of the emitting material (AIZS), implying that excitons are formed in the quaternary nanocrystals and decay radiatively.

Electrical characterization of InAs/InP self-assembled quantum dots with InGaAs strain-relief layers

International Nuclear Information System (INIS)

Kim, J. S.; Kim, E. K.; Hwang, H.; Park, K.; Yoon, E.; Park, I. W.; Park, Y. J.

2004-01-01

We have investigated the energy levels of InAs quantum dots (QDs) embedded in various barrier layers such as InP, InGaAs and GaAs by using deep level transient spectroscopy (DLTS) measurement. The apparent activation energy of 0.56 eV below the conduction band edge of barrier layers in the InAs/InP QD system was higher than 0.32 eV in the InAs/In 0.53 Ga 0.47 As QD system or 0.29 eV in the InAs/GaAs/In 0.53 Ga 0.47 As QD system, which was inserted in 10 mono-layers (MLs) GaAs between InAs QDs and the InGaAs barrier. The capture barrier heights of InAs QDs in the InAs/InP system was measured at more than about 0.18 eV, showing the existence of strain between QDs and barrier layers. The InAs/GaAs(10 MLs)/InGaAs system also showed about 0.12 eV capture barrier, but the InAs/InGaAs system has a very small barrier. This result might originate from the strain-relief effect due to InGaAs layers.

Large-area, long-term monitoring of mineral barrier materials

International Nuclear Information System (INIS)

Brandelik, A.; Huebner, C.

1997-01-01

Clay-type mineral layers are used for bottom and surface barriers in environmental containment, such as landfill designs. Their performance in terms of isolation depends on the water content and its variation with the time. Sensitive long-term areal mapping of the moisture content can detect in time drying or shearing failures that will have a negative impact on the performance of the barrier. Based on the measurement of the dielectric coefficient (not of the unpredictable electric conductivity as proposed by others), we use the combination of two sensors; the cryo-moisture sensor and the cable network sensor in the clay-type mineral layer. The cryo-moisture sensor measures the depth profile of the absolute water content and the change of density on a small area (diameter approx. 0.2 m). It is selfcalibrating and very accurate. The cable network sensor is a net of moisture sensitive radiofrequency cables. It is buried in the barrier layer and determines variations of the water content of approximately 3% (by volume) with a spatial accuracy of approx. 4 meters. We have used the cryo-sensor since 1992 and already started installing the cable network on an area of approx. 2000 m 2 within a waste disposal surface barrier at Karlsruhe. This system is non-destructive and allows long-term monitoring. It is predicted to operate for longer than 20 years. The calculated costs of acquisition, installation and operation are $ 4.-/m 2 in the first year

A heating and diffusion barrier based on TaSiN x for miniaturized IC devices

International Nuclear Information System (INIS)

Cheng, H.-Y.; Chen, Y.-C.; Lee, C.-M.; Wang, S.-H.; Chin, T.-S.

2006-01-01

Highly resistive TaSiN x films investigated as candidates for heating and diffusion-barrier layers for miniaturized IC devices such as a sensor or a phases-change random access memory (PCRAM). The obtained resistivity, between 0.069-1.21 Ω cm, increases with increasing nitrogen content up to 52.83%, and fulfills the requirements as a suitable heating layer. All the as-deposited films were amorphous, and the films with substantial nitrogen content showed excellent thermal stability The amorphous structure had a very smooth surface which was stable at temperatures up to 800 deg. C. In addition to its heating capability, the amorphous structure with no grain boundaries was found to also act as a good diffusion barrier effect in contact with a tungsten electrode as determined by AES an TEM analysis. The barrier effect was evaluated by an annealing at 500 and 600 deg. C in Ar atmosphere for 30 min, respectively. The highly resistive TaSiN x heating layer successfully obstructed the diffusion of tungsten atoms from the W electrodes even when the layer was only 10 nm thick. With increasing N content, the heating and diffusion-barrier layer for PCRAM was proposed as a typical example of many potential applications

Carbazole/triarylamine based polymers as a hole injection/transport layer in organic light emitting devices.

Science.gov (United States)

Wang, Hui; Ryu, Jeong-Tak; Kwon, Younghwan

2012-05-01

This study examined the influence of the charge injection barriers on the performance of organic light emitting diodes (OLEDs) using polymers with a stepwise tuned ionization potential (I(p) approximately -5.01 - -5.29 eV) between the indium tin oxide (ITO) (phi approximately -4.8 eV) anode and tris(8-hydroxyquinolinato) aluminium (Alq3) (I(p) approximately -5.7 eV) layer. The energy levels of the polymers were tuned by structural modification. Double layer devices were fabricated with a configuration of ITO/polymer/Alq3/LiF/Al, where the polymers, Alq3, and LiF/Al were used as the hole injection/transport layer, emissive electron transport layer, and electron injection/cathode, respectively. Using the current density-voltage (J-V), luminescence-voltage (L-V) and efficiencies in these double layer devices, the device performance was evaluated in terms of the energy level alignments at the interfaces, such as the hole injection barriers (phi(h)(iTO/polymer) and phi(h)(polymer/Alq3)) from ITO through the polymers into the Alq3 layer, and the electron injection barrier (phi(e)(polymer/Alq3) or electron/exciton blocking barrier) at the polymer/Alq3 interface.

Electrical insulator assembly with oxygen permeation barrier

Science.gov (United States)

Van Der Beck, Roland R.; Bond, James A.

1994-01-01

A high-voltage electrical insulator (21) for electrically insulating a thermoelectric module (17) in a spacecraft from a niobium-1% zirconium alloy wall (11) of a heat exchanger (13) filled with liquid lithium (16) while providing good thermal conductivity between the heat exchanger and the thermoelectric module. The insulator (21) has a single crystal alumina layer (SxAl.sub.2 O.sub.3, sapphire) with a niobium foil layer (32) bonded thereto on the surface of the alumina crystal (26) facing the heat exchanger wall (11), and a molybdenum layer (31) bonded to the niobium layer (32) to act as an oxygen permeation barrier to preclude the oxygen depleting effects of the lithium from causing undesirable niobium-aluminum intermetallic layers near the alumina-niobium interface.

Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

KAUST Repository

Useinov, Arthur

2012-06-01

In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

KAUST Repository

Useinov, Arthur; Gooneratne, Chinthaka Pasan; Kosel, Jü rgen

2012-01-01

In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

Effect of residual stress in layered ceramic microcomposites on crack propagation during fracture

International Nuclear Information System (INIS)

Tomaszewski, H.; Strzeszewski, J.; Gebicki, W.

1998-01-01

Laminar composites, containing layers of Y-ZrO 2 and either Al 2 O 3 or a mixture of Al 2 O 3 and ZrO 2 have been fabricated using a sequential centrifuging technique of water solutions containing of suspended particles. Controlled crack growth experiments with notched beams of composites were done and showed the significant effect of barrier layer thickness and composition of the crack propagation path during fracture. Distinct crack deflection in alumina layers was observed. The increase of crack deflection angle with the alumina layer thickness was also found. In the case of the barrier layer made of mixture, crack deflection did not occur independently on layer thickness. The observed changes have been correlated with the radial distribution of residual stresses in barrier layers created during cooling of sintered composites from fabrication temperature. The stress found were the result of the differences in the thermal expansion and sintering shrinkage of alumina and zirconia and the crystallographically anisotropic thermal expansion of the alumina. The residual stress distribution has been measured by piezo-spectroscopy based on the optical fluorescence of Cr + dopants in alumina. (author)

Effects of Complex Structured Anodic Oxide Dielectric Layer Grown in Pore Matrix for Aluminum Capacitor.

Science.gov (United States)

Shin, Jin-Ha; Yun, Sook Young; Lee, Chang Hyoung; Park, Hwa-Sun; Suh, Su-Jeong

2015-11-01

Anodization of aluminum is generally divided up into two types of anodic aluminum oxide structures depending on electrolyte type. In this study, an anodization process was carried out in two steps to obtain high dielectric strength and break down voltage. In the first step, evaporated high purity Al on Si wafer was anodized in oxalic acidic aqueous solution at various times at a constant temperature of 5 degrees C. In the second step, citric acidic aqueous solution was used to obtain a thickly grown sub-barrier layer. During the second anodization process, the anodizing potential of various ranges was applied at room temperature. An increased thickness of the sub-barrier layer in the porous matrix was obtained according to the increment of the applied anodizing potential. The microstructures and the growth of the sub-barrier layer were then observed with an increasing anodizing potential of 40 to 300 V by using a scanning electron microscope (SEM). An impedance analyzer was used to observe the change of electrical properties, including the capacitance, dissipation factor, impedance, and equivalent series resistance (ESR) depending on the thickness increase of the sub-barrier layer. In addition, the breakdown voltage was measured. The results revealed that dielectric strength was improved with the increase of sub-barrier layer thickness.

Dual layer hollow fiber sorbents: Concept, fabrication and characterization

KAUST Repository

Bhandari, Dhaval; Olanrewaju, Kayode O.; Bessho, Naoki; Breedveld, Victor; Koros, William J.

2013-01-01

and to ensure consistent sorption capacity over repeated cycles, a dense, thin polymer barrier layer on the fiber sorbents is needed to allow only thermal interactions between the sorbate loaded layer and the thermal regeneration fluid. This paper considers

Structuring unbreakable hydrophobic barriers in paper

Science.gov (United States)

Nargang, Tobias M.; Kotz, Frederik; Rapp, Bastian E.

2018-02-01

Hydrophobic barriers are one of the key elements of microfluidic paper based analytical devices (μPADs).μPADs are simple and cost efficient and they can be carried out without the need of high standard laboratories. To carry out such a test a method is needed to create stable hydrophobic barriers. Commonly used methods like printing wax or polystyrene have the major drawback that these barriers are stiff and break if bended which means they will no longer be able to retain a liquid sample. Here we present silanes to structure hydrophobic barriers via polycondensation and show a silanization method which combines the advantages of flexible silane/siloxane layers with the short processing times of UV-light based structuring. The barriers are created by using methoxy silanes which are mixed with a photo acid generator (PAG) as photoinitiator. Also a photosensitizer was given to the mixture to increase the effectiveness of the PAG. After the PAG is activated by UV-light the silane is hydrolyzed and coupled to the cellulose via polycondensation. The created hydrophobic barriers are highly stable and do not break if being bended.

Metallographic techniques for evaluation of thermal barrier coatings

Science.gov (United States)

Brindley, William J.; Leonhardt, Todd A.

1990-01-01

The performance of ceramic thermal barrier coatings is strongly dependent on the amount and shape of the porosity in the coating. Current metallographic techniques do not provide polished surfaces that are adequate for a repeatable interpretation of the coating structures. A technique recently developed at NASA-Lewis for preparation of thermal barrier coating sections combines epoxy impregnation, careful sectioning and polishing, and interference layering to provide previously unobtainable information on processing-induced porosity. In fact, increased contrast and less ambiguous structure developed by the method make automatic quantitative metallography a viable option for characterizing thermal barrier coating structures.

Modification of metal–InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers

International Nuclear Information System (INIS)

Chauhan, Lalit; Gupta, Suman; Jaiswal, Piyush; Bhat, Navakanta; Shivashankar, S.A.; Hughes, G.

2015-01-01

The effect of inserting ultra-thin atomic layer deposited Al 2 O 3 dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low (Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al 2 O 3 /p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al 2 O 3 interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al 2 O 3 interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al 2 O 3 /n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current–voltage characteristics displayed by these devices. - Highlights: • Investigation of the modification of metal–InGaAs Schottky barrier (SB) behaviour • Improving metal–InGaAs interface by sulphur passivation and ultrathin interlayer • Examine the effect of low work function and high work function metals on SB • Different SB behaviours observed on both n-type InGaAs and p-type InGaAs • Metal/n-InGaAs interface is more strongly pinned than the metal/p-InGaAs interface

EDX and ion beam treatment studies of filamentary in situ MgB2 wires with Ti barrier

International Nuclear Information System (INIS)

Rosova, A.; Kovac, P.; Husek, I.; Kopera, L.

2011-01-01

Highlights: → SiC-doped MgB 2 wires with Ti barrier showed good Jc in magnetic field. → Explanation why the Ti barrier fits to SiC-doped MgB 2 filaments. → Ti barrier getters Si from SiC-doped filaments and improve their properties. → Si accumulated in an inner layer of Ti barrier protects filaments from Cu diffusion. → Ion beam treatment helps to discover microstructure of complicated systems. - Abstract: In situ SiC-doped filamentary MgB 2 wires (with the diameter of 0.860 and 0.375 mm) with Cu stabilization separated by Ti barrier layers supported by outer SS sheath and annealed at 800 deg. C/0.5 h have been studied by combination of EDX analysis and ion beam selective etching. It was found that several Ti-Cu inter-metallic compounds were created by Cu-Ti interdiffusion and thus the barrier protection against Cu penetration into the superconducting filaments is limited. We showed an advantage of Ti use as the barrier material in our wires. Ti getters silicon out from the superconducting filament, what purges superconducting MgB 2 from Si and creates an additional Si-rich layer in inner part of Ti barrier which prevents Cu diffusion more effectively.

Development of highly flexible and ultra-low permeation rate thin-film barrier structure for organic electronics

International Nuclear Information System (INIS)

Kim, Namsu; Graham, Samuel

2013-01-01

A flexible thin-film encapsulation architecture for organic electronics was built and consisted of a silicon oxide/alumina and parylene layer deposited over Ca sensors on a barrier-coated polyethylene terephthalate substrate. The film's effective water vapor transmission rate was 2.4 ± 1.5 × 10 −5 g/m 2 /day at 20 °C and 50% relative humidity. Flexural tests revealed that for films deposited on the polyethylene terephthalate substrate, the barrier layer failed due to cracking at a curvature radius of 6.4 mm, corresponding to a strain of 0.8%. Adding an epoxy top coat of suitable thickness shifted the neutral axis toward the encapsulation layer, reducing the induced strain. Barrier performance was maintained under the 6.4 mm radius of curvature in this encapsulation structure. Thus, shifting the neutral axis via device structural design is an effective method of extending the flexibility of thin-film encapsulation structure without compromising the performance loss as a barrier layer. - Highlights: • High performance barrier is fabricated on flexible substrate. • The water vapor transmission rate is 2.4 ± 1.5 × 10 −5 g/m 2 /day. • The structure maintains its performance under a small radius of bending curvature

Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers

International Nuclear Information System (INIS)

Baek, Seung-heon Chris; Seo, Yu-Jin; Oh, Joong Gun; Albert Park, Min Gyu; Bong, Jae Hoon; Yoon, Seong Jun; Lee, Seok-Hee; Seo, Minsu; Park, Seung-young; Park, Byong-Guk

2014-01-01

In this paper, we report the alleviation of the Fermi-level pinning on metal/n-germanium (Ge) contact by the insertion of multiple layers of single-layer graphene (SLG) at the metal/n-Ge interface. A decrease in the Schottky barrier height with an increase in the number of inserted SLG layers was observed, which supports the contention that Fermi-level pinning at metal/n-Ge contact originates from the metal-induced gap states at the metal/n-Ge interface. The modulation of Schottky barrier height by varying the number of inserted SLG layers (m) can bring about the use of Ge as the next-generation complementary metal-oxide-semiconductor material. Furthermore, the inserted SLG layers can be used as the tunnel barrier for spin injection into Ge substrate for spin-based transistors.

Shottky-barrier formation

International Nuclear Information System (INIS)

Guines, F.; Sanchez-Dehesa, J.; Flores, F.

1983-01-01

In this paper a realistic selfconsistent calculation of an abrupt metal-semiconductor junction is presented by means of a tight-binding approach. A specific Si-Ag junction has been considered, and the charge neutrality level as well as the barrier height have been determined in good agreement with experiments. For a generaljunction it is shown that the interface properties depend essentially on the characteristics of the first metal layer and its interaction with the semiconductor. (Author) [pt

Yttria-stabilized zirkonia / gadolinium zirconate double-layer plasma-sprayed thermal barrier coating systems (TBCs)

Energy Technology Data Exchange (ETDEWEB)

Bakan, Emine

2015-07-01

Thermal barrier coating (TBC) research and development is driven by the desirability of further increasing the maximum inlet temperature in a gas turbine engine. A number of new top coat ceramic materials have been proposed during the last decades due to limited temperature capability (1200 C) of the state-of-the-art yttria-stabilized zirconia (7 wt. % Y{sub 2}O{sub 3}-ZrO{sub 2}, YSZ) at long term operation. Zirconate pyrochlores of the large lanthanides((Gd → La){sub 2}Zr{sub 2}O{sub 7}) have been particularly attractive due to their higher temperature phase stability than that of the YSZ. Nonetheless, the issues related with the implementation of pyrochlores such as low fracture toughness and formation of deleterious interphases with thermally grown oxide (TGO, Al{sub 2}O{sub 3}) were reported. The implication was the requirement of an interlayer between the pyrochlores and TGO, which introduced double-layer systems to the TBC literature. Furthermore, processability issues of pyrochlores associated with the different evaporation rates of lanthanide oxides and zirconia resulting in unfavorable composition variations in the coatings were addressed in different studies. After all, although the material properties are available, there is a paucity of data in the literature concerning the properties of the coatings made of pyrochlores. From the processability point of view the most reported pyrochlore is La{sub 2}Zr{sub 2}O{sub 7}. Hence, the goal of this research was to investigate plasma-sprayed Gd{sub 2}Zr{sub 2}O{sub 7} (GZO) coatings and YSZ/GZO double-layer TBC systems. Three main topics were examined based on processing, performance and properties: (i) the plasma spray processing of the GZO and its impact on the microstructural and compositional properties of the GZO coatings; (ii) the cycling lifetime of the YSZ/GZO double-layer systems under thermal gradient at a surface temperature of 1400 C; (iii) the properties of the GZO and YSZ coatings such as

Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

Science.gov (United States)

Lumbantoruan, Franky J.; Wong, Yuen-Yee; Huang, Wei-Ching; Yu, Hung-Wei; Chang, Edward-Yi

2017-10-01

NH3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH3 due to the presence of higher carbon impurity (2.6 × 1019 cm-2). When the NH3 flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 1018 atom cm-3 and the 2 DEG electron density recovered to 9.57 × 1012 cm-2.

Analytical charge control model for AlGaN/GaN MIS-HFETs including an undepleted barrier layer

Energy Technology Data Exchange (ETDEWEB)

Shenghui, Lu; Jiangfeng, Du; Qian, Luo; Qi, Yu; Wei, Zhou; Jianxin, Xia; Mohua, Yang, E-mail: lushenghui@sohu.co [State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2010-09-15

An analytical charge control model considering the insulator/AlGaN interface charge and undepleted Al-GaN barrier layer is presented for AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors (MIS-HFETs) over the entire operation range of gate voltage. The whole process of charge control is analyzed in detail and partitioned into four regions: I-full depletion, II-partial depletion, III-neutral region and IV-electron accumulation at the insulator/AlGaN interface. The results show that two-dimensional electron gas (2DEG) saturates at the boundary of region II/III and the gate voltage should not exceed the 2DEG saturation voltage in order to keep the channel in control. In addition, the span of region II accounts for about 50% of the range of gate voltage before 2DEG saturates. The good agreement of the calculated transfer characteristic with the measured data confirms the validity of the proposed model. (semiconductor devices)

Hanford Site Protective Barrier Development Program: Fiscal year 1990 highlights

International Nuclear Information System (INIS)

Cadwell, L.L.

1991-09-01

The Hanford Site Protective Barrier Development Program was jointly developed by Pacific Northwest Laboratory (PNL) and Westinghouse Hanford Company (WHC) to design and test an earthen cover system(s) that can be used to inhibit water infiltration; plant, animal, and human intrusion; and wind and water erosion. The joint PNL/WHC program was initiated in FY 1986. To date, research findings support the initial concepts of barrier designs for the Hanford Site. A fine-soil surface is planned to partition surface water into runoff and temporary storage. Transpiration by vegetation that grows in the fine-soil layer will return stored water to the atmosphere as will surface evaporation. A capillary break created by the interface of the fine-soil layer and coarser textured materials below will further limit the downward migration of surface water, making it available over a longer period of time for cycling to the atmosphere. Should water pass the interface, it will drain laterally through a coarse textured sand/gravel layer. Tested barrier designs appear to work adequately to prevent drainage under current and postulated wetter-climate (added precipitation) conditions. Wind and water erosion tasks are developing data to predict the extent of erosion on barrier surfaces. Data collected during the last year confirm the effectiveness of small burrowing animals in removing surface water. Water infiltrating through burrows of larger mammals was subsequently lost by natural processes. Natural analog and climate change studies are under way to provide credibility for modeling the performance of barrier designs over a long period of time and under shifts in climate. 10 refs., 30 figs

Hanford Site Protective Barrier Development Program: Fiscal year 1990 highlights

Energy Technology Data Exchange (ETDEWEB)

Cadwell, L.L. (ed.)

1991-09-01

The Hanford Site Protective Barrier Development Program was jointly developed by Pacific Northwest Laboratory (PNL) and Westinghouse Hanford Company (WHC) to design and test an earthen cover system(s) that can be used to inhibit water infiltration; plant, animal, and human intrusion; and wind and water erosion. The joint PNL/WHC program was initiated in FY 1986. To date, research findings support the initial concepts of barrier designs for the Hanford Site. A fine-soil surface is planned to partition surface water into runoff and temporary storage. Transpiration by vegetation that grows in the fine-soil layer will return stored water to the atmosphere as will surface evaporation. A capillary break created by the interface of the fine-soil layer and coarser textured materials below will further limit the downward migration of surface water, making it available over a longer period of time for cycling to the atmosphere. Should water pass the interface, it will drain laterally through a coarse textured sand/gravel layer. Tested barrier designs appear to work adequately to prevent drainage under current and postulated wetter-climate (added precipitation) conditions. Wind and water erosion tasks are developing data to predict the extent of erosion on barrier surfaces. Data collected during the last year confirm the effectiveness of small burrowing animals in removing surface water. Water infiltrating through burrows of larger mammals was subsequently lost by natural processes. Natural analog and climate change studies are under way to provide credibility for modeling the performance of barrier designs over a long period of time and under shifts in climate. 10 refs., 30 figs.

Properties of Whey-Protein-Coated Films and Laminates as Novel Recyclable Food Packaging Materials with Excellent Barrier Properties

Directory of Open Access Journals (Sweden)

Markus Schmid

2012-01-01

Full Text Available In case of food packaging applications, high oxygen and water vapour barriers are the prerequisite conditions for preserving the quality of the products throughout their whole lifecycle. Currently available polymers and/or biopolymer films are mostly used in combination with barrier materials derived from oil based plastics or aluminium to enhance their low barrier properties. In order to replace these non-renewable materials, current research efforts are focused on the development of sustainable coatings, while maintaining the functional properties of the resulting packaging materials. This article provides an introduction to food packaging requirements, highlights prior art on the use of whey-based coatings for their barriers properties, and describes the key properties of an innovative packaging multilayer material that includes a whey-based layer. The developed whey protein formulations had excellent barrier properties almost comparable to the ethylene vinyl alcohol copolymers (EVOH barrier layer conventionally used in food packaging composites, with an oxygen barrier (OTR of <2 [cm³(STP/(m²d bar] when normalized to a thickness of 100 μm. Further requirements of the barrier layer are good adhesion to the substrate and sufficient flexibility to withstand mechanical load while preventing delamination and/or brittle fracture. Whey-protein-based coatings have successfully met these functional and mechanical requirements.

Deactivation of SCR catalysts by potassium: A study of potential alkali barrier materials

DEFF Research Database (Denmark)

Olsen, Brian Kjærgaard; Kügler, Frauke; Castellino, Francesco

2017-01-01

The use of coatings in order to protect vanadia based SCR catalysts against potassium poisoning has been studied by lab- and pilot-scale experiments. Three-layer pellets, consisting of a layer ofa potential coating material situated between layers of fresh and potassium poisoned SCR catalyst, were...... the coating process. Potassium had to some extent penetrated the MgO coat, and SEM analysis revealed it to be rather thick and fragile. Despite these observations, the coating did protect the SCR catalyst against potassium poisoning to some degree, leaving promise of further optimization....... used to test the ability of the barrier layer to block the diffusion of potassium across the pellet. Of MgO, sepiolite and Hollandite manganese oxide, MgO was the most effective potassium barrier, and no potassium was detected in the MgO layer upon exposure to SCR conditions for 7 days. Two monoliths...

Optimizing The Organic/Inorganic Barrier Structure For Flexible Plastic Substrate Encapsulation

Directory of Open Access Journals (Sweden)

Yi-Chiuan Lin

2012-07-01

Full Text Available A multilayered barrier structure stacked with organosilicon and silicon oxide (SiOx films consecutively prepared using plasma-enhanced chemical vapor deposition (PECVD was developed to encapsulate flexible plastic substrate. The evolution on the residual internal stress, structural quality of the organosilicon/SiOx multilayered structure as well as its adhesion to the substrate were found to correlate closely with the thickness of the inset organosilicon layer. Due to the significant discrepancy in the thermal expansion coefficient between the substrate and SiOx film, the thickness of the organosilicon layer deposited onto the substrate and SiOx film thus was crucial to optimize the barrier property of the organosilicon/SiOx structure. The organosilicon/SiOx barrier structure possessed a lowest residual compressive stress and quality adhesion to the substrate was achieved from engineering the organosilicon layer thickness in the multilayered structure. The relaxation of the residual internal stress in the barrier structure led to a dense SiOx film as a consequence of the enhancement in the Si-O-Si networks and thereby resulted in the reduction of the water vapor permeation. Accordingly, a water vapor transmission rate (WVTR below 1 × 10-2 g/m2 /day being potential for the application on the flexible optoelectronic device packaging was achievable from the 3-pairs organosilicon/SiOx multilayered structure deposited onto the polyethylene terephthalate (PET substrate.

Electron tunneling in tantalum surface layers on niobium

International Nuclear Information System (INIS)

Ruggiero, S.T.; Track, E.K.; Prober, D.E.; Arnold, G.B.; DeWeert, M.J.

1986-01-01

We have performed electron tunneling measurements on tantalum surface layers on niobium. The tunnel junctions comprise 2000-A-circle Nb base electrodes with 10--100-A-circle in situ--deposited Ta overlayers, an oxide barrier, and Ag, Pb, or Pb-Bi alloy counterelectrodes. The base electrodes were prepared by ion-beam sputter deposition. The characteristics of these junctions have been studied as a function of Ta-layer thickness. These include the critical current, bound-state energy, phonon structure, and oxide barrier shape. We have compared our results for the product I/sub c/R versus tantalum-layer thickness with an extended version of the Gallagher theory which accounts for both the finite mean free path in the Ta overlayers and suppression of the I/sub c/R product due to strong-coupling effects. Excellent fits to the data yield a value of the intrinsic scattering probability for electrons at the Ta/Nb interface of r 2 = 0.01. This is consistent with the value expected from simple scattering off the potential step created by the difference between the Fermi energies of Ta and Nb. We have found a universal empirical correlation in average barrier height phi-bar and width s in the form phi-bar = 6 eV/(s-10 A-circle) for measured junctions which holds both for our data and results for available data in the literature for oxide-barrier junctions. The latter are composed of a wide variety of base and counterelectrode materials. These results are discussed in the general context of oxide growth and compared with results for artificial tunnel barriers

Barrier capability of Zr-N films with titanium addition against copper diffusion

International Nuclear Information System (INIS)

Wang Ying; Cao Fei; Yang Xiaodong; Ding Minghui

2009-01-01

Zr-Ti-N film prepared by sputtering deposition has been employed as a potential diffusion barrier for Cu metallization. It is thought that the existing states of Ti and Zr in the films are Ti-N and Zr-N phase in Zr-Ti-N films. Material analysis by XRD, XPS and sheet resistance measurement reveal that the failure of Zr-N film is mainly due to the formation of Cu 3 Si precipitates at the Zr-N/Si interface by Cu diffusion through the grain boundaries or local defects of the Zr-N barrier layer into Si substrate. In conjunction with sheet resistance measurement, XRD and XPS analyses, the Cu/Zr-Ti-N/Si contact system has high thermal stability at least up to 700 deg. C. The incorporation of Ti atoms into Zr-N barrier layer was shown to be beneficial in improving the thermal stability of the Cu/barrier/Si contact system.

Hot exciton relaxation in multiple layers CdSe/ZnSe self-assembled quantum dots separated by thick ZnSe barriers

International Nuclear Information System (INIS)

Eremenko, M; Budkin, G; Reznitsky, A

2015-01-01

We have studied PL and PLE spectra of two samples (A and B) of MBE grown CdSe/ZnSe asymmetric double quantum wells with different amount of deposited CdSe layers separated by 14 nm ZnSe barrier. It has been found that PLE spectra of the states forming short wavelength side of the PL spectra of both deep and shallow QWs of the sample A as well as that of deep QW of the sample B demonstrate oscillating structure in the spectral ranges corresponding to exciton states of self-assembled quantum dots only. Meanwhile PLE spectra of the short wavelength states of shallow QW the sample B revealed pronounced oscillating structure with energy period of ZnSe LO phonon under excitation with photons in a wide energy range both in the regions of quantum-dot states and in that of free states in the ZnSe barrier. In these spectra creating of excitons with kinetic energies more than 0.3 eV was observed which considerably exceed the exciton binding energy as well as LO phonon energy (both appr. 0.03 eV). It has been concluded that oscillating structure of the PLE spectra arises due to cascade relaxation of hot excitons. We discuss the model which explains these experimental findings. (paper)

Hot exciton relaxation in multiple layers CdSe/ZnSe self-assembled quantum dots separated by thick ZnSe barriers

Science.gov (United States)

Eremenko, M.; Budkin, G.; Reznitsky, A.

2015-11-01

We have studied PL and PLE spectra of two samples (A and B) of MBE grown CdSe/ZnSe asymmetric double quantum wells with different amount of deposited CdSe layers separated by 14 nm ZnSe barrier. It has been found that PLE spectra of the states forming short wavelength side of the PL spectra of both deep and shallow QWs of the sample A as well as that of deep QW of the sample B demonstrate oscillating structure in the spectral ranges corresponding to exciton states of self-assembled quantum dots only. Meanwhile PLE spectra of the short wavelength states of shallow QW the sample B revealed pronounced oscillating structure with energy period of ZnSe LO phonon under excitation with photons in a wide energy range both in the regions of quantum-dot states and in that of free states in the ZnSe barrier. In these spectra creating of excitons with kinetic energies more than 0.3 eV was observed which considerably exceed the exciton binding energy as well as LO phonon energy (both appr. 0.03 eV). It has been concluded that oscillating structure of the PLE spectra arises due to cascade relaxation of hot excitons. We discuss the model which explains these experimental findings.

Optically controlled resonant tunneling in a double-barrier diode

Science.gov (United States)

Kan, S. C.; Wu, S.; Sanders, S.; Griffel, G.; Yariv, A.

1991-03-01

The resonant tunneling effect is optically enhanced in a GaAs/GaAlAs double-barrier structure that has partial lateral current confinement. The peak current increases and the valley current decreases simultaneously when the device surface is illuminated, due to the increased conductivity of the top layer of the structure. The effect of the lateral current confinement on the current-voltage characteristic of a double-barrier resonant tunneling structure was also studied. With increased lateral current confinement, the peak and valley current decrease at a different rate such that the current peak-to-valley ratio increases up to three times. The experimental results are explained by solving the electrostatic potential distribution in the structure using a simple three-layer model.

Search for Spin Filtering By Electron Tunneling Through Ferromagnetic EuS Barriers in Pbs

Science.gov (United States)

Figielski, T.; Morawski, A.; Wosinski, T.; Wrotek, S.; Makosa, A.; Lusakowska, E.; Story, T.; Sipatov, A. Yu.; Szczerbakow, A.; Grasza, K.;

Super Oxygen and Improved Water Vapor Barrier of Polypropylene Film with Polyelectrolyte Multilayer Nanocoatings.

Science.gov (United States)

Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C

2016-06-01

Biaxially oriented polypropylene (BOPP) is widely used in packaging. Although its orientation increases mechanical strength and clarity, BOPP suffers from a high oxygen transmission rate (OTR). Multilayer thin films are deposited from water using layer-by-layer (LbL) assembly. Polyethylenimine (PEI) is combined with either poly(acrylic acid) (PAA) or vermiculite (VMT) clay to impart high oxygen barrier. A 30-bilayer PEI/VMT nanocoating (226 nm thick) improves the OTR of 17.8 μm thick BOPP by more than 30X, rivaling most inorganic coatings. PEI/PAA multilayers achieve comparable barrier with only 12 bilayers due to greater thickness, but these films exhibit increased oxygen permeability at high humidity. The PEI/VMT coatings actually exhibit improved oxygen barrier at high humidity (and also improve moisture barrier by more than 40%). This high barrier BOPP meets the criteria for sensitive food and some electronics packaging applications. Additionally, this water-based coating technology is cost effective and provides an opportunity to produce high barrier polypropylene film on an industrial scale. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The formation of hydrogen permeation barriers on steels by aluminising

Science.gov (United States)

Forcey, K. S.; Ross, D. K.; Wu, C. H.

1991-06-01

An extensive investigation has been carried out into the effectiveness of aluminised layers as permeation barriers on AISI 316L stainless and DIN 1.4914 martensitic steels. The study involved measurement of the hydrogen permeation rate through commercially aluminised steel discs of thicknesses in the range 1-1.6 mm, at temperatures between 250 and 600 °C and for an upstream hydrogen pressure of 10 5 Pa. The composition and structure of the aluminide layers were investigated by a number of techniques such as SEM, electron beam microprobe and X-ray diffraction. Accelerator based techniques such as RBS and NRA were employed to study the top micron or so of the surfaces of the samples. By these techniques it was found that the effectiveness of the permeation barrier depended on the formation of a thin surface oxide layer consisting of Al 2O 3. It was found that the permeation rate through the aluminised steels could be reduced by 3-4 orders of magnitude by forming a surface oxide layer up to a micron or so in thickness.

Permanent isolation surface barrier development plan

International Nuclear Information System (INIS)

Wing, N.R.

1994-01-01

The exhumation and treatment of wastes may not always be the preferred alternative in the remediation of a waste site. In-place disposal alternatives, under certain circumstances, may be the most desirable alternatives to use in the protection of human health and the environment. The implementation of an in-place disposal alternative will likely require some type of protective covering that will provide long-term isolation of the wastes from the accessible environment. Even if the wastes are exhumed and treated, a long-term barrier may still be needed to adequately dispose of the treated wastes or any remaining waste residuals. Currently, no open-quotes provenclose quotes long-term barrier is available. The Hanford Site Permanent Isolation Surface Barrier Development Program (BDP) was organized to develop the technology needed to provide a long-term surface barrier capability for the Hanford Site. The permanent isolation barrier technology also could be used at other sites. Permanent isolation barriers use engineered layers of natural materials to create an integrated structure with redundant protective features. Drawings of conceptual permanent isolation surface barriers are shown. The natural construction materials (e.g., fine soil, sand, gravel, riprap, asphalt) have been selected to optimize barrier performance and longevity. The objective of current designs is to use natural materials to develop a maintenance-free permanent isolation surface barrier that isolates wastes for a minimum of 1,000 years by limiting water drainage to near-zero amounts; reducing the likelihood of plant, animal, and human intrusion; controlling the exhalation of noxious gases; and minimizing erosion-related problems

Permanent isolation surface barrier development plan

Energy Technology Data Exchange (ETDEWEB)

Wing, N.R.

1994-01-01

The exhumation and treatment of wastes may not always be the preferred alternative in the remediation of a waste site. In-place disposal alternatives, under certain circumstances, may be the most desirable alternatives to use in the protection of human health and the environment. The implementation of an in-place disposal alternative will likely require some type of protective covering that will provide long-term isolation of the wastes from the accessible environment. Even if the wastes are exhumed and treated, a long-term barrier may still be needed to adequately dispose of the treated wastes or any remaining waste residuals. Currently, no {open_quotes}proven{close_quotes} long-term barrier is available. The Hanford Site Permanent Isolation Surface Barrier Development Program (BDP) was organized to develop the technology needed to provide a long-term surface barrier capability for the Hanford Site. The permanent isolation barrier technology also could be used at other sites. Permanent isolation barriers use engineered layers of natural materials to create an integrated structure with redundant protective features. Drawings of conceptual permanent isolation surface barriers are shown. The natural construction materials (e.g., fine soil, sand, gravel, riprap, asphalt) have been selected to optimize barrier performance and longevity. The objective of current designs is to use natural materials to develop a maintenance-free permanent isolation surface barrier that isolates wastes for a minimum of 1,000 years by limiting water drainage to near-zero amounts; reducing the likelihood of plant, animal, and human intrusion; controlling the exhalation of noxious gases; and minimizing erosion-related problems.

nBn Infrared Detector Containing Graded Absorption Layer

Science.gov (United States)

Gunapala, Sarath D.; Ting, David Z.; Hill, Cory J.; Bandara, Sumith V.

2009-01-01

It has been proposed to modify the basic structure of an nBn infrared photodetector so that a plain electron-donor- type (n-type) semiconductor contact layer would be replaced by a graded n-type III V alloy semiconductor layer (i.e., ternary or quarternary) with appropriate doping gradient. The abbreviation nBn refers to one aspect of the unmodified basic device structure: There is an electron-barrier ("B" ) layer between two n-type ("n" ) layers, as shown in the upper part of the figure. One of the n-type layers is the aforementioned photon-absorption layer; the other n-type layer, denoted the contact layer, collects the photocurrent. The basic unmodified device structure utilizes minority-charge-carrier conduction, such that, for reasons too complex to explain within the space available for this article, the dark current at a given temperature can be orders of magnitude lower (and, consequently, signal-to-noise ratios can be greater) than in infrared detectors of other types. Thus, to obtain a given level of performance, less cooling (and, consequently, less cooling equipment and less cooling power) is needed. [In principle, one could obtain the same advantages by means of a structure that would be called pBp because it would include a barrier layer between two electron-acceptor- type (p-type) layers.] The proposed modifications could make it practical to utilize nBn photodetectors in conjunction with readily available, compact thermoelectric coolers in diverse infrared- imaging applications that could include planetary exploration, industrial quality control, monitoring pollution, firefighting, law enforcement, and medical diagnosis.

Effect of a hard coat layer on buckle delamination of thin ITO layers on a compliant elasto-plastic substrate: an experimental–numerical approach

NARCIS (Netherlands)

Sluis, van der O.; Abdallah, Amir; Bouten, P.C.P.; Timmermans, P.H.M.; Toonder, den J.M.J.; With, de G.

2011-01-01

Layer buckling and delamination is a common interfacial failure phenomenon in thin film multi-layer structures that are used in flexible display applications. Typically, the substrate is coated on both sides with a hybrid coating, calleda hard coat (HC), which acts as a gas barrier and also

Polymeric hydrogen diffusion barrier, high-pressure storage tank so equipped, method of fabricating a storage tank and method of preventing hydrogen diffusion

Science.gov (United States)

Lessing, Paul A [Idaho Falls, ID

2008-07-22

An electrochemically active hydrogen diffusion barrier which comprises an anode layer, a cathode layer, and an intermediate electrolyte layer, which is conductive to protons and substantially impermeable to hydrogen. A catalytic metal present in or adjacent to the anode layer catalyzes an electrochemical reaction that converts any hydrogen that diffuses through the electrolyte layer to protons and electrons. The protons and electrons are transported to the cathode layer and reacted to form hydrogen. The hydrogen diffusion barrier is applied to a polymeric substrate used in a storage tank to store hydrogen under high pressure. A storage tank equipped with the electrochemically active hydrogen diffusion barrier, a method of fabricating the storage tank, and a method of preventing hydrogen from diffusing out of a storage tank are also disclosed.

Dual layer hollow fiber sorbents: Concept, fabrication and characterization

KAUST Repository

Bhandari, Dhaval

2013-02-01

Hollow fiber sorbents are pseudo-monolithic separations materials created with fiber spinning technology using a polymer \\'binder\\', impregnated with high loadings of sorbent \\'fillers\\' [1]. To increase purified gas recovery during the sorption step and to ensure consistent sorption capacity over repeated cycles, a dense, thin polymer barrier layer on the fiber sorbents is needed to allow only thermal interactions between the sorbate loaded layer and the thermal regeneration fluid. This paper considers materials and methods to create delamination-free dual layer fiber sorbents, with a porous core and a barrier sheath layer formed using a simultaneous co-extrusion process. Low permeability polymers were screened for sheath layer creation, with the core layer comprising cellulose acetate polymer as binder and zeolite NaY as sorbent fillers. Appropriate core and sheath layer dope compositions were determined by the cloud-point method and rheology measurements. The morphology of the as-spun fibers was characterized in detail by SEM, EDX and gas permeation analysis. A simplified qualitative model is described to explain the observed fiber morphology. The effects of core, sheath spin dope and bore fluid compositions, spinning process parameters such as air-gap height, spin dope and coagulation bath temperatures, and elongation draw ratio are examined in detail. © 2012 Elsevier B.V. All rights reserved.

Electroless Ni-Mo-P diffusion barriers with Pd-activated self-assembled monolayer on SiO2

International Nuclear Information System (INIS)

Liu Dianlong; Yang Zhigang; Zhang Chi

2010-01-01

Ternary Ni-based amorphous films can serve as a diffusion barrier layer for Cu interconnects in ultralarge-scale integration (ULSI) applications. In this paper, electroless Ni-Mo-P films deposited on SiO 2 layer without sputtered seed layer were prepared by using Pd-activated self-assembled monolayer (SAM). The solutions and operating conditions for pretreatment and deposition were presented, and the formation of Pd-activated SAM was demonstrated by XPS (X-ray photoelectron spectroscopy) analysis and BSE (back-scattered electron) observation. The effects of the concentration of Na 2 MoO 4 added in electrolytes, pH value, and bath temperature on the surface morphology and compositions of Ni-Mo-P films were investigated. The microstructures, diffusion barrier property, electrical resistivity, and adhesion were also examined. Based on the experimental results, the Ni-Mo-P alloys produced by using Pd-activated SAM had an amorphous or amorphous-like structure, and possessed good performance as diffusion barrier layer.

Acoustic impact on the laminated plates placed between barriers

Science.gov (United States)

Paimushin, V. N.; Gazizullin, R. K.; Fedotenkov, G. V.

2016-11-01

On the basis of previously derived equations, analytical solutions are established on the forced vibrations of two-layer and three-layers rectangular plates hinged in an opening of absolutely rigid walls during the transmission of monoharmonic sound waves. It is assumed that the partition wall is situated between two absolutely rigid barriers, one of them by harmonic oscillation with a given displacements amplitude on the plate forms the incident sound wave, and the other is stationary and has a coating of deformable energy absorbing material with high damping properties. The behavior of acoustic environments in the spaces between the deformable plate and the barriers described by classical wave equation based on the ideal compressible fluid model. To describe the process of dynamic deformation of the energy absorbing coating of fixed barrier, two-dimensional equations of motion based on the use of models transversely soft layer are derived with a linear approximation of the displacement field in the thickness direction of the coating and taking into account the damping properties of the material and the hysteresis model for it. The influence of the physical and mechanical properties of the concerned mechanical system and the frequency of the incident sound wave on the parameters of its insulation properties of the plate, as well as on the parameters of the stress-strain state of the plate has been analyzed.

LOCALIZATION OF PERMEABILITY BARRIERS IN THE FROG SKIN EPITHELIUM

Science.gov (United States)

Martinez-Palomo, A.; Erlij, D.; Bracho, H.

1971-01-01

Ruthenium red and colloidal lanthanum were used to determine the site of the structural barriers to diffusion within the intercellular spaces of frog skin epithelium. Electron micrographs show that occluding zonules located at the outer border of the stratum corneum and at the outer layer of the stratum granulosum are true tight junctions since they are impermeable to these tracers. Measurement of 140La uptake by the living skin shows that lanthanum moves across the external surface of the skin readily, into and out of a compartment that has a limited capacity and is bounded on its internal side by a barrier impermeable to lanthanum. Examination of these skins with the electron microscope suggests that the compartment is localized between the external membrane of the cells at the outer layer of the s. granulosum and at the outermost surface of the skin. These observations and other findings described in the literature indicate that the site of the external high resistance barrier of the frog skin is localized at the outer border of the s. granulosum. PMID:4329611

Hanford Permanent Isolation Barrier Program: Asphalt technology development

International Nuclear Information System (INIS)

Freeman, H.D.; Romine, R.A.

1994-11-01

An important component of the Hanford Permanent Isolation Barrier is the use of a two-layer composite asphalt system, which provides backup water diversion capabilities if the primary capillary barrier fails to meet infiltration goals. Because of asphalt's potential to perform to specification over the 1000-year design life criterion, a composite asphalt barrier (HMAC/fluid-applied polymer-modified asphalt) is being considered as an alternative to the bentonite clay/high density poly(ethylene) barriers for the low-permeability component of the Hanford Permanent Isolation Barrier. The feasibility of using asphalt as a long-term barrier is currently being studied. Information that must be known is the ability of asphalt to retain desirable physical properties over a period of 1000 years. This paper presents the approach for performing accelerated aging tests and evaluating the performance of samples under accelerated conditions. The results of these tests will be compared with asphalt artifact analogs and the results of modeling the degradation of the selected asphalt composite to make life-cycle predictions

A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

Energy Technology Data Exchange (ETDEWEB)

Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2013-11-01

Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

International Nuclear Information System (INIS)

Oanna, Y.; Ozawa, N.; Yamashita, M.; Yasuda, N.

1984-01-01

Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition

Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

International Nuclear Information System (INIS)

Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

2013-01-01

Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180°C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400–760°C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600°C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures

Modified geometry three-layered tablet as a platform for class II ...

African Journals Online (AJOL)

shape tablet composed of a core layer matrix made mainly of the enteric polymer hydroxypropyl methylcellulose acetate succinate and two barrier layers on either sides made of ethylcellulose. He showed that the system is capable of providing a.

Gas permeability of bentonite barriers: development, construction and testing of a measurement system

Directory of Open Access Journals (Sweden)

Heraldo Nunes Pitanga

Full Text Available Abstract This article proposes a testing device to quickly and reliably estimate the gas permeability of bentonite-based clay barriers used in landfill cover systems. The testing methodology is based on a transient gas flow regime that passes through the barrier, therefore not requiring the use of sophisticated equipment that aim to maintain constant differential pressure and measure the gas flow, common requirements for testing methods under a permanent flow regime. To confirm the feasibility of the proposed technique, tests were performed on a pure hydrated bentonite layer, which subsequently encompassed samples of geosynthetic clay liner (GCL at different moisture contents. Geosynthetic clay liners are often selected as a part of the barrier layer for cover systems in solid waste landfills to prevent infiltration of rainfall and migration of biogas into the atmosphere. The results confirmed the equipment reliability and differentiate the different responses of the gas flow barriers studied, considering their different compositions and different moistures.

Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

International Nuclear Information System (INIS)

Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

2015-01-01

Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

Dielectric and diffusion barrier multilayer for Cu(In,Ga)Se{sub 2} solar cells integration on stainless steel sheet

Energy Technology Data Exchange (ETDEWEB)

Amouzou, Dodji, E-mail: dodji.amouzou@fundp.ac.be [Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles, 61, 5000 Namur (Belgium); Guaino, Philippe; Fourdrinier, Lionel; Richir, Jean-Baptiste; Maseri, Fabrizio [CRM-Group, Boulevard de Colonster, B 57, 4000 Liège (Belgium); Sporken, Robert [Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles, 61, 5000 Namur (Belgium)

2013-09-02

For the fabrication of monolithically integrated flexible Cu(In, Ga)Se{sub 2}, CIGS modules on stainless steel, individual photovoltaic cells must be insulated from metal substrates by a barrier layer that can sustain high thermal treatments. In this work, a combination of sol–gel (organosilane-sol) and sputtered SiAlxOy forming thin diffusion barrier layers (TDBL) was prepared on stainless steel substrates. The deposition of organosilane-sol dielectric layers on the commercial stainless steel (maximal roughness, Rz = 500 nm and Root Mean Square roughness, RMS = 56 nm) induces a planarization of the surface (RMS = 16.4 nm, Rz = 176 nm). The DC leakage current through the dielectric layers was measured for the metal-insulator-metal (MIM) junctions that act as capacitors. This method allowed us to assess the quality of our TDBL insulating layer and its lateral uniformity. Indeed, evaluating a ratio of the number of valid MIM capacitors to the number of tested MIM capacitors, a yield of ∼ 95% and 50% has been reached respectively with non-annealed and annealed samples based on sol–gel double layers. A yield of 100% was achieved for sol–gel double layers reinforced with a sputtered SiAlxOy coating and a third sol–gel monolayer. Since this yield is obtained on several samples, it can be extrapolated to any substrate size. Furthermore, according to Glow Discharge Optical Emission Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy measurements, these barrier layers exhibit excellent barrier properties against the diffusion of undesired atoms which could otherwise spoil the electronic and optical properties of CIGS photovoltaic cells. - Highlights: • We functionalize steel for monolithically integrated Cu(In,Ga)Se{sub 2} solar cells • Thin dielectric and diffusion barrier layers (TDDBL) prepared on steel • Reliability and breakdown voltage of dielectric layers have been studied. • Investigation of thermal treatment effect on dielectric

Surface layer temperature inversion in the Bay of Bengal: Main characteristics and related mechanisms

Digital Repository Service at National Institute of Oceanography (India)

Pankajakshan, T.; Suresh, I.; Gautham, S.; PrasannaKumar, S.; Lengaigne, M.; Rao, R.R.; Neetu, S.; Hegde, A.

Surface layer temperature inversion (SLTI), a warm layer sandwiched between surface and subsurface colder waters, has been reported to frequently occur in conjunction with barrier layers in the Bay of Bengal (BoB), with potentially commensurable...

CMHC research project: Testing of air barriers construction details: Report

Energy Technology Data Exchange (ETDEWEB)

1991-01-01

This project was conducted to quantify the air leakage characteristics of the header joist, the electric outlets, and the window openings in wood-frame walls. The study evaluated the sealed internal membrane method, where polyethylene sheet and sealant provide the air barrier; the external air barrier method, which uses a continuous vapour permeable membrane (spun-bonded olefin film), sandwiched between two layers of external wall sheathing; and the airtight drywall method, where the interior gypsum board finish, together with framing materials and gaskets, are used as the air barrier. In addition, the traditional approach to wood-frame wall construction, where no special attention is given to achieving a continuous air barrier, was evaluated for comparison.

Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

International Nuclear Information System (INIS)

Wang, Junjie; Feng, Simin; Rhodes, Daniel; Balicas, Luis; Nguyen, Minh An T.; Watanabe, K.; Taniguchi, T.; Mallouk, Thomas E.; Terrones, Mauricio; Zhu, J.

2015-01-01

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe 2 field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 10 13 /cm 2 /eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices

Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission

Energy Technology Data Exchange (ETDEWEB)

Alam, Saiful [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA (United States); Georgia Tech-CNRS, UMI 2958, Metz (France); CEA-LETI, Minatec Campus, Grenoble (France); Sundaram, Suresh; Li, Xin; El Gmili, Youssef [Georgia Tech-CNRS, UMI 2958, Metz (France); Jamroz, Miryam E.; Robin, Ivan C. [CEA-LETI, Minatec Campus, Grenoble (France); Voss, Paul L.; Ougazzaden, Abdallah [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA (United States); Georgia Tech-CNRS, UMI 2958, Metz (France); Salvestrini, Jean-Paul [Georgia Tech-CNRS, UMI 2958, Metz (France); LMOPS, University of Lorraine, EA4423, Metz (France)

2017-08-15

The effect of indium (In) in the barrier of InGaN/GaN multiple quantum well (MQW) has been studied for MQWs with and without semi-bulk InGaN buffer. From simulation, the optimum In content in the barrier with 3-5 nm width is 5-7% to get the optimal material quality and internal quantum efficiency (IQE) of ∝65% for 450-480 nm emission range. Simulation shows a reduction of the potential barrier due to band flattening, a more homogeneous distribution of electrons and holes in the active region and subsequently, a more radiative recombination rate with InGaN as barrier layer. Both cathodoluminescence (CL) and photoluminescence (PL) experimental results show a blue-shift of emission wavelength along with an enhancement in the emission intensity when GaN barrier is replaced with InGaN barrier, for a MQW structure both with and without the semi-bulk InGaN buffer. We attribute this blue shift to the reduced polarization mismatch and increased effective bandgap. This InGaN barrier-related improvement in IQE and efficiency droop could be useful for the realization of longer wavelength ''green-gap'' range LEDs where poor IQE and efficiency droop are more prominent due to high indium (In) in the active region. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A study of the barrier properties of polyethylene coated with a nanocellulose/magnetite composite film

Directory of Open Access Journals (Sweden)

Đorđević Nenad

2016-01-01

Full Text Available The morphological, thermal and barrier properties of low-density polyethylene/polycaprolactone-modified nanocellulose hybrid materials were investigated in this paper. Nanonocelulose/magnetite (NC-Fe3O4 nanocomposite and maleic acid functionalized NC/magnetite (NCMA-Fe3O4 nanocomposite were prepared and used as filler at various concentrations (5, 10 and 15 wt. % in polycaprolactone (PCL layer. PE was coated with PCL/NC/magnetite layer. The addition of the filler did not unfavorably affect the inherent properties of the polymer, especially its barrier properties. Oxygen permeation measurements show that the oxygen barrier properties of magnetite enriched PCL film were improved due to chemical activity of added material. The highest level of barrier capacity was observed for PE samples coated with PCL based composite with NCMA-Fe3O4 micro/-nanofiller, which implies the significant contribution of nanocellulose surface modification with maleic anhydride residue to improved barrier properties. [Projekat Ministarstva nauke Republike Srbije, br. III45019 i br. OI172013

The oxidation behavior of classical thermal barrier coatings exposed to extreme temperature

Directory of Open Access Journals (Sweden)

Alina DRAGOMIRESCU

2017-03-01

Full Text Available Thermal barrier coatings (TBC are designed to protect metal surfaces from extreme temperatures and improve their resistance to oxidation during service. Currently, the most commonly used systems are those that have the TBC structure bond coat (BC / top coat (TC layers. The top coat layer is a ceramic layer. Oxidation tests are designed to identify the dynamics of the thermally oxide layer (TGO growth at the interface of bond coat / top coat layers, delamination mechanism and the TBC structural changes induced by thermal conditions. This paper is a short study on the evolution of aluminum oxide protective layer along with prolonged exposure to the testing temperature. There have been tested rectangular specimens of metal super alloy with four surfaces coated with a duplex thermal barrier coating system. The specimens were microscopically and EDAX analyzed before and after the tests. In order to determine the oxide type, the samples were analyzed using X-ray diffraction. The results of the investigation are encouraging for future studies. The results show a direct relationship between the development of the oxide layer and long exposure to the test temperature. Future research will focus on changing the testing temperature to compare the results.

Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction

International Nuclear Information System (INIS)

Li Gui-fang; Hu Jing; Lv Hui; Cui Zhijun; Hou Xiaowei; Liu Shibin; Du Yongqian

2016-01-01

We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co 2 MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance–area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height (SBH) occurs following the insertion of the graphene layer between Co 2 MnSi and Ge. The electron SBH is modulated in the 0.34 eV–0.61 eV range. Furthermore, the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility. (paper)

Scaffolding proteins in the development and maintenance of the epidermal permeability barrier.

Science.gov (United States)

Crawford, Melissa; Dagnino, Lina

2017-10-02

The skin of mammals and other terrestrial vertebrates protects the organism against the external environment, preventing heat, water and electrolyte loss, as well as entry of chemicals and pathogens. Impairments in the epidermal permeability barrier function are associated with the genesis and/or progression of a variety of pathological conditions, including genetic inflammatory diseases, microbial and viral infections, and photodamage induced by UV radiation. In mammals, the outside-in epidermal permeability barrier is provided by the joint action of the outermost cornified layer, together with assembled tight junctions in granular keratinocytes found in the layers underneath. Tight junctions serve as both outside-in and inside-out barriers, and impede paracellular movements of ions, water, macromolecules and microorganisms. At the molecular level, tight junctions consist of integral membrane proteins that form an extracellular seal between adjacent cells, and associate with cytoplasmic scaffold proteins that serve as links with the actin cytoskeleton. In this review, we address the roles that scaffold proteins play specifically in the establishment and maintenance of the epidermal permeability barrier, and how various pathologies alter or impair their functions.

Modification of metal–InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al{sub 2}O{sub 3} interlayers

Energy Technology Data Exchange (ETDEWEB)

Chauhan, Lalit [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); Gupta, Suman; Jaiswal, Piyush; Bhat, Navakanta; Shivashankar, S.A. [Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science, Bangalore 560012 (India); Hughes, G. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland)

2015-08-31

The effect of inserting ultra-thin atomic layer deposited Al{sub 2}O{sub 3} dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low (Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al{sub 2}O{sub 3}/p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al{sub 2}O{sub 3} interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al{sub 2}O{sub 3} interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al{sub 2}O{sub 3}/n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current–voltage characteristics displayed by these devices. - Highlights: • Investigation of the modification of metal–InGaAs Schottky barrier (SB) behaviour • Improving metal–InGaAs interface by sulphur passivation and ultrathin interlayer • Examine the effect of low work function and high work function metals on SB • Different SB behaviours observed on both n-type InGaAs and p-type InGaAs • Metal/n-InGaAs interface is more strongly pinned than the metal/p-InGaAs interface.

Beeswax–chitosan emulsion coated paper with enhanced water vapor barrier efficiency

International Nuclear Information System (INIS)

Zhang, Weiwei; Xiao, Huining; Qian, Liying

2014-01-01

Graphical abstract: - Highlights: • The water vapor barrier efficiency of paper was enhanced via green-based emulsion coating. • Extremely high lipid content in the emulsion coating layer was firstly utilized to reduce WVTR in emulsion-based film. • A controlled WVTR of beeswax–chitosan emulsion coating could be obtained by dying at specific temperature. - Abstract: For lipid–hydrocolloid emulsion based film, the increase of lipid amount would improve its water vapor barrier property, but also reduce the mechanical strength of the film in the meantime thus leading to a compromised lipid content in the film. However, when the emulsion is coated on paper surface, more lipid could be used for emulsion preparation to enhance the moisture resistance without considering the weakened strength of the film induced by lipid, because the mechanical properties of emulsion coated paper is mainly governed by the strength of base paper instead of the coating layer. In this study, beeswax–chitosan emulsion was first prepared and then coated on paper surface to improve paper's water vapor barrier and water resistance properties. The range and variance analysis of orthogonal test design showed that the order of priorities of the factors accordingly was beeswax solid content, drying temperature and chitosan concentration. The effect of drying temperature on water vapor transmission rate (WVTR) and water contact angle of coated paper was further investigated using 1.2 wt% chitosan and 96% beeswax solid content in the coating layer. The results indicated that water vapor barrier property was in accordance with the density of the coating layer. Atomic force microscope (AFM) was also used to characterize the surface morphology and explain the hydrophobicity of beeswax–chitosan coated paper. It was found that surface beeswax particles melted to wrinkle at high drying temperatures, while roughness values maintained at micro-scale over the temperature range investigated

Diffusion barrier characteristics and shear fracture behaviors of eutectic PbSn solder/electroless Co(W,P) samples

International Nuclear Information System (INIS)

Pan, Hung-Chun; Hsieh, Tsung-Eong

2012-01-01

Highlights: ► Diffusion barrier features, activation energies of IMC growth and mechanical behaviors of electroless Co(W,P)/PbSn joints. ► Amorphous Co(W,P) is a sacrificial- plus stuffed-type barrier while polycrystalline Co(W,P) is a sacrificial-type barrier. ► Ductile mode dominates the failure of Co(W,P)/PbSn joints. ► Phosphorus content of Co(W,P) is crucial to the barrier capability and microstructure evolution at Co(W,P)/PbSn interface. ► Diffusion barrier capability is governed by the nature of chemical bonds, rather than the crystallinity of materials. - Abstract: Diffusion barrier characteristics, activation energy (E a ) of IMC growth and bonding properties of amorphous and polycrystalline electroless Co(W,P) (termed as α-Co(W,P) and poly-Co(W,P)) to eutectic PbSn solder are presented. Intermetallic compound (IMC) spallation and an nano-crystalline P-rich layer were observed in PbSn/α-Co(W,P) samples subjected to liquid-state aging at 250 °C. In contrast, IMCs resided on the P-rich layer in PbSn/α-Co(W,P) samples subjected to solid-state aging at 150 °C. Thick IMCs neighboring to an amorphous W-rich layer was seen in PbSn/poly-Co(W,P) samples regardless of the aging type. α-Co(W,P) was found to be a sacrificial- plus stuffed-type barrier while poly-Co(W,P) is mainly a sacrificial-type barrier. The values of E a 's for PbSn/α-Co(W,P) and PbSn/poly-Co(W,P) systems were 338.6 and 167.5 kJ/mol, respectively. Shear test revealed the ductile mode dominates the failure in both α- and poly-Co(W,P) samples. Analytical results indicated the high P content in electroless layer might enhance the barrier capability but degrade the bonding strength.

In-situ formed Ce_0.8Gd_0.2O_1.9 barrier layers on yttria stabilized zirconia backbones by infiltration - A promising path to high performing oxygen electrodes of solid oxide cell

DEFF Research Database (Denmark)

Ovtar, Simona; Chen, Ming; Samson, Alfred Junio

2017-01-01

Oxygen electrodes for solid oxide cells were prepared by a consecutive infiltration of a gadolinium doped ceria (Ce0.8Gd0.2O1.9, CGO) barrier layer and a lanthanum cobalt nickelate (La0.95Co0.4Ni0.6O3, LCN) electro catalyst layer into a porous yttrium doped zirconia (YSZ) backbone. The influences...... of the following parameters on the microstructure of the formed CGO barrier layer and on the electrochemical performance of the cells were studied: i) surfactants and wetting agents, ii) ceria/gadolinia coverage, iii) calcination profiles and iv) exposure temperature during testing. The infiltration process...... performance and only a small increase of the cell-resistance with increasing exposure temperatures during testing were obtained. A complete and homogenous covering of the YSZ backbone with Ce0.8Gd0.2O1.9 was found to be necessary to maintain high performance also at higher exposure temperatures (> 800 °C)....

Characterization for capillary barriers effects in a sand box test using time-lapsed GPR measurements

Science.gov (United States)

Kuroda, S.; Ishii, N.; Morii, T.

2017-12-01

Capillary barriers have been known as the method to protect subsurface regions against infiltration from soil surface. It is caused by essentially heterogeneous structure in permeability or soil physical property and produce non-uniform infiltration process then, in order to estimate the actual situation of the capillary barrier effect, the site-characterization with imaging technique like geophysical prospecting is effective. In this study, we examine the applicability of GPR to characterization for capillary barriers. We built a sand box with 90x340x90cm in which a thin high-permeable gravel layer was embedded as a capillary barrier. We conducted an infiltration test in the sand box using porous tube array for irrigation. It is expected to lead to non-uniform flow of soil water induced by capillary barrier effects. We monitored this process by various types of GPR measurements, including time-lapsed common offset profiling (COP) with multi- frequency antenna and transmission measurements like cross-borehole radar. At first, we conducted GPR common-offset survey. It could show the depth of capillary barrier in sand box. After that we conducted the infiltration test and GPR monitoring for infiltration process. GPR profiles can detect the wetting front and estimate water content change in the soil layer above the capillary barrier. From spatial change in these results we can estimate the effect of capillary barrier and the zone where the break through occur or not. Based on these results, we will discuss the applicability of GPR for monitoring the phenomena around the capillary barrier of soil. At first, we conducted GPR common-offset survey. It could show the depth of capillary barrier in sand box. After that we conducted the infiltration test and GPR monitoring for infiltration process. GPR profiles can detect the wetting front and estimate water content change in the soil layer above the capillary barrier. From spatial change in these results we can estimate the

Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

International Nuclear Information System (INIS)

Bulusu, A.; Singh, A.; Kim, H.; Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B.; Cullen, D.; Graham, S.

2015-01-01

Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al 2 O 3 )/hafnium oxide (HfO 2 ) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN x layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers

Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

Energy Technology Data Exchange (ETDEWEB)

Bulusu, A.; Singh, A.; Kim, H. [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B. [School of Electrical and Computer Engineering, Georgia Institute of Technology, and Center for Organic Photonics and Electronics, Atlanta, Georgia 30332 (United States); Cullen, D. [Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States); Graham, S., E-mail: sgraham@gatech.edu [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States)

2015-08-28

Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al{sub 2}O{sub 3})/hafnium oxide (HfO{sub 2}) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN{sub x} layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

Performance of Zr as FCCI barrier layer for metallic fuel of fast reactor

International Nuclear Information System (INIS)

Kaity, Santu; Bhagat, R.K.; Kutty, T.R.G.; Kumar, Arun; Laik, A.; Kamath, H.S.

2011-01-01

Uranium-plutonium (U-Pu) and uranium-plutonium-zirconium (U-Pu-Zr) alloys have been considered as promising advanced fuels for fast reactor in India because of its high breeding potential, high thermal conductivity, high fissile and fertile atom densities, low doubling time and ease of fabrication compared to other ceramic fuels. The chemical compatibility between the fuel and clad material also known as fuel-clad chemical interaction (FCCI) has been recognized as one of the major concerns about the performance of the metallic fuel. Primarily, two design concepts have been proposed for the metallic fuel development programme for FBRs. One of them is based on sodium bonded ternary U-Pu-Zr alloy with T91 grade steel clad, and the other consists of binary U-Pu alloy mechanically bonded to T91 clad with a Zr liner between the fuel and clad. U will be the axial blanket material for U-Pu binary fuel. In the present investigation, the performance of Zr as FCCI barrier layer was studied through diffusion couple experiments of U/Zr/T91. A thin Zr foil (thickness ∼ 200 μm) sandwiched between U and T91 discs was kept inside a fixture made of Inconel 600 alloy. The fixture was encapsulated in quartz tube under Helium atmosphere and then heated at 650, 700 and 750 deg C for upto 1500 h. The extent of reaction and composition of phases formed were analyzed by scanning electron microscope (SEM) equipped with an energy dispersive spectrometer (EDS) and electron probe microanalyser (EPMA) equipped with wavelength dispersive spectrometer (WDS)

Encapsulation methods and dielectric layers for organic electrical devices

Science.gov (United States)

Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

2013-07-02

The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

Thermal stability of double-ceramic-layer thermal barrier coatings with various coating thickness

International Nuclear Information System (INIS)

Dai Hui; Zhong Xinghua; Li Jiayan; Zhang Yanfei; Meng Jian; Cao Xueqiang

2006-01-01

Double-ceramic-layer (DCL) coatings with various thickness ratios composed of YSZ (6-8 wt.% Y 2 O 3 + ZrO 2 ) and lanthanum zirconate (LZ, La 2 Zr 2 O 7 ) were produced by the atmospheric plasma spraying. Chemical stability of LZ in contact with YSZ in DCL coatings was investigated by calcining powder blends at different temperatures. No obvious reaction was observed when the calcination temperature was lower than 1250 deg. C, implying that LZ and YSZ had good chemical applicability for producing DCL coating. The thermal cycling test indicate that the cycling lives of the DCL coatings are strongly dependent on the thickness ratio of LZ and YSZ, and the coatings with YSZ thickness between 150 and 200 μm have even longer lives than the single-layer YSZ coating. When the YSZ layer is thinner than 100 μm, the DCL coatings failed in the LZ layer close to the interface of YSZ layer and LZ layer. For the coatings with the YSZ thickness above 150 μm, the failure mainly occurs at the interface of the YSZ layer and the bond coat

TiO2 as diffusion barrier at Co/Alq3 interface studied by x-ray standing wave technique

Science.gov (United States)

Phatak Londhe, Vaishali; Gupta, A.; Ponpandian, N.; Kumar, D.; Reddy, V. R.

2018-06-01

Nano-scale diffusion at the interfaces in organic spin valve thin films plays a vital role in controlling the performance of magneto-electronic devices. In the present work, it is shown that a thin layer of titanium dioxide at the interface of Co/Alq3 can act as a good diffusion barrier. The buried interfaces of Co/Alq3/Co organic spin valve thin film has been studied using x-ray standing waves technique. A planar waveguide is formed with Alq3 layer forming the cavity and Co layers as the walls of the waveguide. Precise information about diffusion of Co into Alq3 is obtained through excitation of the waveguide modes. It is found that the top Co layer diffuses deep into the Alq3 resulting in incorporation of 3.1% Co in the Alq3 layer. Insertion of a 1.7 nm thick barrier layer of TiO2 at Co/Alq3 interface results in a drastic reduction in the diffusion of Co into Alq3 to a value of only 0.4%. This suggests a better performance of organic spin valve with diffusion barrier of TiO2.

Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions.

Science.gov (United States)

Kunc, Jan; Hu, Yike; Palmer, James; Guo, Zelei; Hankinson, John; Gamal, Salah H; Berger, Claire; de Heer, Walt A

2014-09-10

A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(0001̅) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

Diffusion barrier characteristics of co monolayer prepared by Langmuir Blodgett technique

Energy Technology Data Exchange (ETDEWEB)

Sharma, Sumit, E-mail: sumitelsd2007@gmail.com [Electronic Science Department, Kurukshetra University, Kurukshetra, Haryana 136119 (India); Kumar, Mukesh, E-mail: kumarmukesh@gmail.com [Department of Electrical Engineering, College of Engineering at Wadi Aldawasir, Prince Sattam Bin Abdulaziz University, Wadi Aldawasir 11991 (Saudi Arabia); Rani, Sumita [Electronic Science Department, Kurukshetra University, Kurukshetra, Haryana 136119 (India); Kumar, Dinesh, E-mail: dineshelsd@gmail.com [Electronic Science Department, Kurukshetra University, Kurukshetra, Haryana 136119 (India)

2016-04-30

Graphical abstract: Thermal stability of structures (a) Cu/SiO{sub 2}/Si and (b) Cu/Co/SiO{sub 2}/Si, indicating that presence of thin cobalt layer improves the thermal stability of the structure up to 600 °C. - Highlights: • Monolayers of cobalt were deposited on SiO{sub 2}/Si substrates using LB technique. • Copper layers were deposited on this structures using thermal evaporation method. • Thermal stability was determined by annealing the structures at various temperatures. • The structure was found to be stable up to 650 °C. - Abstract: Monolayers of Co over SiO{sub 2}/Si substrate were deposited using Langmuir Blodgett (LB) technique. The diffusion barrier capability of Co layer was evaluated against copper diffusion. The structure of the deposited Co layer was analyzed using X-ray photoelectron spectroscopy (XPS), Energy Dispersive X-ray Spectroscopy (EDS) and Atomic force microscopy (AFM) techniques. Thermal stability of Cu/SiO{sub 2}/Si and Cu/Co/SiO{sub 2}/Si test structures was studied and compared using X-ray diffraction (XRD), scanning electron microscope (SEM) and four probe techniques. The samples were annealed at different temperatures starting from 200 °C up to 700 °C in vacuum for 30 min. XRD results indicated that combination of Co/SiO{sub 2} worked as diffusion barrier up to 550 °C whereas SiO{sub 2} alone could work as barrier only up to 300 °C. Sheet resistance of these samples was measured as a function of annealing temperature which also supports XRD results. C–V curves of these structures under the influence of Biased Thermal Stress (BTS) were analyzed. BTS was applied at 2.5 MV cm{sup −1} at 150 °C. Results showed that in the presence of Co barrier layer there was no shift in the C–V curve even after 90 min of BTS while in the absence of barrier there was a significant shift in the C–V curve even after 30 min of BTS. Further these test structures were examined for leakage current density (j{sub L}) at same BTS

Luminescence spectra of CdSe/ZnSe double layers of quantum dots

Energy Technology Data Exchange (ETDEWEB)

Reznitsky, Alexander; Permogorov, Sergei; Korenev, Vladimir V.; Sedova, Irina; Sorokin, Sergey; Sitnikova, Alla; Ivanov, Sergei [A.F. Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Klochikhin, Albert [B.P. Konstantinov Nuclear Physics Institute, St. Petersburg (Russian Federation)

2009-12-15

We have studied the emission spectra and structural properties of double CdSe/ZnSe quantum dot (QD) sheet structures grown by molecular beam epitaxy in order to elucidate the mechanisms of the electronic and strain field interaction between the QD planes. The thickness of the ZnSe barrier separating the CdSe sheets was in the range of 10-60 monolayers (ML) in the set of samples studied. We have found that coupling between dots in adjacent layers becomes relatively strong in CdSe/ZnSe double layers structures with 25-27 ML barrier, while it is rather weak when the barrier thickness exceeds 30 ML. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Suppression of surface barriers in superconductors by columnar defects

International Nuclear Information System (INIS)

Koshelev, A. E.; Vinokur, V. M.

2001-01-01

We investigate the influence of columnar defects in layered superconductors on the thermally activated penetration of pancake vortices through the surface barrier. Columnar defects, located near the surface, facilitate penetration of vortices through the surface barrier, by creating ''weak spots,'' through which pancakes can penetrate into the superconductor. Penetration of a pancake mediated by an isolated column, located near the surface, is a two-stage process involving hopping from the surface to the column and the detachment from the column into the bulk; each stage is controlled by its own activation barrier. The resulting effective energy is equal to the maximum of those two barriers. For a given external field there exists an optimum location of the column for which the barriers for the both processes are equal and the reduction of the effective penetration barrier is maximal. At high fields the effective penetration field is approximately 2 times smaller than in unirradiated samples. We also estimate the suppression of the effective penetration field by column clusters. This mechanism provides further reduction of the penetration field at low temperatures

Roll-to-roll vacuum deposition of barrier coatings

CERN Document Server

Bishop, Charles A

2015-01-01

It is intended that the book will be a practical guide to provide any reader with the basic information to help them understand what is necessary in order to produce a good barrier coated web or to improve the quality of any existing barrier product. After providing an introduction, where the terminology is outlined and some of the science is given (keeping the mathematics to a minimum), including barrier testing methods, the vacuum deposition process will be described. In theory a thin layer of metal or glass-like material should be enough to convert any polymer film into a perfect barrier material. The reality is that all barrier coatings have their performance limited by the defects in the coating. This book looks at the whole process from the source materials through to the post deposition handling of the coated material. This holistic view of the vacuum coating process provides a description of the common sources of defects and includes the possible methods of limiting the defects. This enables readers...

Enhanced Corrosion Resistance of PVD-CrN Coatings by ALD Sealing Layers

Science.gov (United States)

Wan; Zhang, Teng Fei; Ding, Ji Cheng; Kim, Chang-Min; Park, So-Won; Yang, Yang; Kim, Kwang-Ho; Kwon, Se-Hun

2017-04-01

Multilayered hard coatings with a CrN matrix and an Al2O3, TiO2, or nanolaminate-Al2O3/TiO2 sealing layer were designed by a hybrid deposition process combined with physical vapor deposition (PVD) and atomic layer deposition (ALD). The strategy was to utilize ALD thin films as pinhole-free barriers to seal the intrinsic defects to protect the CrN matrix. The influences of the different sealing layers added in the coatings on the microstructure, surface roughness, and corrosion behaviors were investigated. The results indicated that the sealing layer added by ALD significantly decreased the average grain size and improved the corrosion resistance of the CrN coatings. The insertion of the nanolaminate-Al2O3/TiO2 sealing layers resulted in a further increase in corrosion resistance, which was attributed to the synergistic effect of Al2O3 and TiO2, both acting as excellent passivation barriers to the diffusion of corrosive substances.

Manufacturing and testing of fuel cans with barrier coating for LWR type reactors in USA and Japan

International Nuclear Information System (INIS)

Gorskij, V.V.

1988-01-01

Papers on manufacturing methods for fuel cans of zircalloy with barrier coating of zirconium prepared by pressing an internal tube into external one as well as by pressing of two-layer tubes with further rolling are reviewed. Heat treatment based on creation of the assigned gradient of temperature over tube wall cross section in order to change the structure of a thin layer of the outside surfce when conserving the initial structure of the rest cross section is developed to increase corrosion resistance. Eddy current and ultrasound methods for control of quality and thickness of the barrier layer of zirconium are used

Lamellar granule secretion starts before the establishment of tight junction barrier for paracellular tracers in mammalian epidermis.

Directory of Open Access Journals (Sweden)

Akemi Ishida-Yamamoto

Full Text Available Defects in epidermal barrier function and/or vesicular transport underlie severe skin diseases including ichthyosis and atopic dermatitis. Tight junctions (TJs form a single layered network in simple epithelia. TJs are important for both barrier functions and vesicular transport. Epidermis is stratified epithelia and lamellar granules (LGs are secreted from the stratum granulosum (SG in a sequential manner. Previously, continuous TJs and paracellular permeability barriers were found in the second layer (SG2 of SG in mice, but their fate and correlation with LG secretion have been poorly understood. We studied epidermal TJ-related structures in humans and in mice and found occludin/ZO-1 immunoreactive multilayered networks spanning the first layer of SG (SG1 and SG2. Paracellular penetration tracer passed through some TJs in SG2, but not in SG1. LG secretion into the paracellular tracer positive spaces started below the level of TJs of SG1. Our study suggests that LG-secretion starts before the establishment of TJ barrier in the mammalian epidermis.

Oxygen barrier of multilayer thin films comprised of polysaccharides and clay.

Science.gov (United States)

Laufer, Galina; Kirkland, Christopher; Cain, Amanda A; Grunlan, Jaime C

2013-06-05

Multilayered thin films of chitosan (CH), carrageenan (CR) and montmorillonite (MMT) clay, deposited using the layer-by-layer technique, were studied in an effort to produce fully renewable polysaccharide-based thin films with low oxygen permeability. Ten 'trilayers' of CH/MMT/CR (film reduced its oxygen permeability (1.76×10(-15) cm(3) cm/cm(2) s Pa) by an order of magnitude under dry conditions. By adding an additional layer of CH to the trilayer sequence, a 'quadlayer' film of CH/CR/CH/MMT (barrier is believed to be due to the unique nanostructure of these films, often referred to as a "nanobrick wall" structure, as well as a strong association amongst the oppositely charged polysaccharides. Combining fully renewable and food contact approved ingredients with high gas barrier and optical transparency makes this technology promising as a foil replacement for food packaging. Copyright © 2013 Elsevier Ltd. All rights reserved.

Gate-modulated conductance of few-layer WSe{sub 2} field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Energy Technology Data Exchange (ETDEWEB)

Wang, Junjie; Feng, Simin [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Rhodes, Daniel; Balicas, Luis [National High Magnetic Field Lab, Florida State University, Tallahassee, Florida 32310 (United States); Nguyen, Minh An T. [Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Watanabe, K.; Taniguchi, T. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Mallouk, Thomas E. [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Biochemistry and Molecular Biology, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Terrones, Mauricio [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Zhu, J., E-mail: jzhu@phys.psu.edu [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2015-04-13

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe{sub 2} field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 10{sup 13}/cm{sup 2}/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.

Influence of compressive stress in TGO layer on impedance spectroscopy from TBC coatings

Energy Technology Data Exchange (ETDEWEB)

Kang, To; Zhang, Jianhai; Yuan, Maodan; Song, Sungjin; Kim, Hakjoon; Kim, Yongseok; Seok, Changsung [Sungkyunkwan Univ., Suwon (Korea, Republic of)

2013-02-15

Impedance spectroscopy is a non destructive evaluation (NDE) method first proposed and developed for evaluating TGO layers with compressive stress inside thermally degraded plasma sprayed thermal barrier coatings (PS TBCs). A bode plot (phase angle ({Dirac_h}) vs. frequency (f)) was used to investigate the TGO layer on electrical responses. In our experimental study, the phase angle of Bode plots is sensitive for detecting TGO layers while applying compressive stress on thermal barrier coatings. It is difficult to detect TGO layers in samples isothermally aged for 100hrs and 200hrs without compressive stress, and substantial change of phase was observed these samples with compressive stress. Also, the frequency shift of the phase angle and change of the phase angle are observed in samples isothermally aged for more than 400hrs.

Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

Science.gov (United States)

Navarro, Dondee; Herrera, Fernando; Zenitani, Hiroshi; Miura-Mattausch, Mitiko; Yorino, Naoto; Jürgen Mattausch, Hans; Takusagawa, Mamoru; Kobayashi, Jun; Hara, Masafumi

2018-04-01

A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current-voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures.

Hanford protoype surface barrier status report: FY 1994

International Nuclear Information System (INIS)

Gee, G.W.; Freeman, H.D.; Walters, W.H. Jr.; Ligotke, M.W.; Campbell, M.D.; Ward, A.L.; Link, S.O.; Smith, S.K.; Gilmore, B.G.; Romine, R.A.

1994-12-01

A full-scale prototype surface barrier has been constructed at the 200 BP-1 Operable Unit in the 200 East Area of the Hanford Site. The prototype barrier has been built to evaluate design, construction, and performance features of a surface barrier that may be used for in-place disposal of wastes at the Hanford Site. The design basis and construction of the prototype have been documented. A testing and monitoring plan has been published outlining specific tests planned for the prototype. The current report describes initial testing activities conducted in FY 1994 and outlines activities for testing and monitoring at the prototype barrier in the future. Asphalt permeability was tested during construction of the prototype in April and May 1994. Cores taken from the asphalt concrete layer were tested in the laboratory and found to have hydraulic conductivities below 1E-09 cm/s. Field measurements of hydraulic conductivity taken on the asphalt concrete using a specially-designed falling head permeameter were more than ten times higher than those from core tests. The higher values are attributed to transient flow through the permeameter seal. In spite of this difficulty, the more rapid field measurements (1-day tests in the field compared to 3 months in the laboratory) gave values as low as IE-09 cm/s and averaged about IE-08 cm/s. Samples of fluid-applied asphalt material, used as a sealant on the asphalt concrete layer, were. tested in the laboratory and found to have hydraulic conductivities below IE-10 cm/s. Measurements of hydraulic conductivity taken on an adjacent asphalt test pad using a sealed double-ring infiltrometer (SDRI) were initiated in September 1994 and are expected to be completed in November 1994. Construction of the prototype surface barrier was completed in August 1994

Optimization of a tunneling barrier in magnetic tunneling junction by tilted-plasma oxidation

International Nuclear Information System (INIS)

Nam, C.H.; Shim, Heejae; Kim, K.S.; Cho, B.K.

2004-01-01

Oxidation of an AlO x insulating barrier in a magnetic tunneling junction (MTJ) was carried out by a tilted-plasma oxidation method. It was found that the tilted-plasma oxidation induced a gradual change in the extent of oxidation of an insulating layer, which consequently led to a gradual change in the tunneling magnetoresistance (TMR) and specific junction resistance (RA) of the MTJ. We found a linear relation in the TMR versus RA curve with positive and negative slopes for less- and overoxidized junctions, respectively, and a parabolic relation for optimally oxidized junctions. The crossover in the TMR versus RA curves provides an effective and useful way to optimize (and monitor) the oxidation condition of a tunneling barrier in MTJs especially of a tunneling barrier less than 10 A thick. The tunneling junctions were also investigated after thermal annealing at various temperatures. The observations after thermal annealing were found to be consistent with transmission electrons microscopy images and a scenario of the partial formation of an additional ultrathin tunneling barrier at the top surface of the bottom magnetic layer

Richards Barrier LA Reference Design Feature Evaluation

International Nuclear Information System (INIS)

N.E. Kramer

1999-01-01

The Richards Barrier is one of the design features of the repository to be considered for the License Application (LA), Richards was a soil scientist who first described the diversion of moisture between two materials with different hydrologic properties. In this report, a Richards Barrier is a special type of backfill with a fine-grained material (such as sand) overlaying a coarse-grained material (such as gravel). Water that enters an emplacement drift will first encounter the fine-grained material and be transported around the coarse-grained material covering the waste package, thus protecting the waste package from contact with most of the groundwater. The objective of this report is to discuss the benefits and liabilities to the repository by the inclusion of a Richards Barrier type backfill in emplacement drifts. The Richards Barrier can act as a barrier to water flow, can reduce the waste package material dissolution rate, limit mobilization of the radionuclides, and can provide structural protection for the waste package. The scope of this report is to: (1) Analyze the behavior of barrier materials following the intrusion of groundwater for influxes of 1 to 300 mm per year. The report will demonstrate diversion of groundwater intrusions into the barrier over an extended time period when seismic activity and consolidation may cause the potential for liquefaction and settlement of the Richards Barrier. (2) Review the thermal effects of the Richards Barrier on material behavior. (3) Analyze the effect of rockfall on the performance of the Richards Barrier and the depth of the barrier required to protect waste packages under the barrier. (4) Review radiological and heating conditions on placement of multiple layers of the barrier. Subsurface Nuclear Safety personnel will perform calculations to determine the radiation reduction-time relationship and shielding capacity of the barrier. (5) Evaluate the effects of ventilation on cooling of emplacement drifts and

Demonstration of close-coupled barriers for subsurface containment of buried waste

International Nuclear Information System (INIS)

Dwyer, B.P.; Heiser, J.; Stewart, W.

1996-01-01

The primary objective of this project is to develop and demonstrate a close-coupled barrier for the containment of subsurface waste or contaminant migration. A close-coupled barrier is produced by first installing a conventional cement grout curtain followed by a thin inner lining of a polymer grout. The resultant barrier is a cement polymer composite that has economic benefits derived from the cement and performance benefits from the durable and resistant polymer layer. Close-coupled barrier technology is applicable for final, interim, or emergency containment of subsurface waste forms. Consequently, when considering the diversity of technology application, the construction emplacement and material technology maturity, general site operational requirements, and regulatory compliance incentives, the close-coupled barrier system provides an alternative for any hazardous or mixed waste remediation plan. This paper discusses the installation of a close-coupled barrier and the subsequent integrity verification

Gas Diffusion Barriers Prepared by Spatial Atmospheric Pressure Plasma Enhanced ALD.

Science.gov (United States)

Hoffmann, Lukas; Theirich, Detlef; Pack, Sven; Kocak, Firat; Schlamm, Daniel; Hasselmann, Tim; Fahl, Henry; Räupke, André; Gargouri, Hassan; Riedl, Thomas

2017-02-01

In this work, we report on aluminum oxide (Al 2 O 3 ) gas permeation barriers prepared by spatial ALD (SALD) at atmospheric pressure. We compare the growth characteristics and layer properties using trimethylaluminum (TMA) in combination with an Ar/O 2 remote atmospheric pressure plasma for different substrate velocities and different temperatures. The resulting Al 2 O 3 films show ultralow water vapor transmission rates (WVTR) on the order of 10 -6 gm -2 d -1 . In notable contrast, plasma based layers already show good barrier properties at low deposition temperatures (75 °C), while water based processes require a growth temperature above 100 °C to achieve equally low WVTRs. The activation energy for the water permeation mechanism was determined to be 62 kJ/mol.

Oxide layers for silicon detector protection against enviroment effects

International Nuclear Information System (INIS)

Bel'tsazh, E.; Brylovska, I.; Valerian, M.

1986-01-01

It is shown that for protection of silicon detectors of nuclear radiations oxide layers could be used. The layers are produced by electrochemical oxidation of silicon surface with the following low-temperature annealing. These layers have characteristics similar to those for oxide layers produced by treatment of silicon samples at elevated temperature in oxygen flow. To determine properties of oxide layers produced by electrochemical oxidation the α-particle back-scattering method and the method of volt-farad characteristics were used. Protection properties of such layers were checked on the surface-barrier detectors. It was shown that protection properties of such detectors were conserved during long storage at room temperature and during their storage under wet-bulb temperature. Detectors without protection layer have worsened their characteristics

Mechanical Properties and Durability of Advanced Environmental Barrier Coatings in Calcium-Magnesium-Alumino-Silicate Environments

Science.gov (United States)

Miladinovich, Daniel S.; Zhu, Dongming

2011-01-01

Environmental barrier coatings are being developed and tested for use with SiC/SiC ceramic matrix composite (CMC) gas turbine engine components. Several oxide and silicate based compositons are being studied for use as top-coat and intermediate layers in a three or more layer environmental barrier coating system. Specifically, the room temperature Vickers-indentation-fracture-toughness testing and high-temperature stability reaction studies with Calcium Magnesium Alumino-Silicate (CMAS or "sand") are being conducted using advanced testing techniques such as high pressure burner rig tests as well as high heat flux laser tests.

Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers

Czech Academy of Sciences Publication Activity Database

Grym, Jan; Yatskiv, Roman

2013-01-01

Roč. 28, č. 4 (2013) ISSN 0268-1242 R&D Projects: GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Colloidal graphite * Epitaxial growth * Schottky barrier diodes Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.206, year: 2013

Modelization and simulation of capillary barriers

International Nuclear Information System (INIS)

Lisbona Cortes, F.; Aguilar Villa, G.; Clavero Gracia, C.; Gracia Lozano, J.L.

1998-01-01

Among the different underground transport phenomena, that due to water flows is of great relevance. Water flows in infiltration and percolation processes are responsible of the transport of hazardous wastes towards phreatic layers. From the industrial and geological standpoints, there is a great interest in the design of natural devices to avoid the flows transporting polluting substances. This interest is increased when devices are used to isolate radioactive waste repositories, whose life is to be longer than several hundred years. The so-called natural devices are those based on the superimposition of material with different hydraulic properties. In particular, the flow retention in this kind stratified media, in unsaturated conditions, is basically due to the capillary barrier effect, resulting from placing a low conductivity material over another with a high hydraulic conductivity. Covers designed from the effect above have also to allow a drainage of the upper layer. The lower cost of these covers, with respect to other kinds of protection systems, and the stability in time of their components make them very attractive. However, a previous investigation to determine their effectivity is required. In this report we present the computer code BCSIM, useful for easy simulations of unsaturated flows in a capillary barrier configuration with drainage, and which is intended to serve as a tool for designing efficient covers. The model, the numerical algorithm and several implementation aspects are described. Results obtained in several simulations, confirming the effectivity of capillary barriers as a technique to build safety covers for hazardous waste repositories, are presented. (Author)

Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition

International Nuclear Information System (INIS)

Jung, Hyunsoo; Choi, Hagyoung; Lee, Sanghun; Jeon, Heeyoung; Jeon, Hyeongtag

2013-01-01

In the present study, we investigated the gas and moisture permeation barrier properties of Al 2 O 3 films deposited on polyethersulfone films (PES) by capacitively coupled plasma (CCP) type Remote Plasma Atomic Layer Deposition (RPALD) at Radio Frequency (RF) plasma powers ranging from 100 W to 400 W in 100 W increments using Trimethylaluminum [TMA, Al(CH 3 ) 3 ] as the Al source and O 2 plasma as the reactant. To study the gas and moisture permeation barrier properties of 100-nm-thick Al 2 O 3 at various plasma powers, the Water Vapor Transmission Rate (WVTR) was measured using an electrical Ca degradation test. WVTR decreased as plasma power increased with WVTR values for 400 W and 100 W of 2.6 × 10 −4 gm −2 day −1 and 1.2 × 10 −3 gm −2 day −1 , respectively. The trends for life time, Al-O and O-H bond, density, and stoichiometry were similar to that of WVTR with improvement associated with increasing plasma power. Further, among plasma power ranging from 100 W to 400 W, the highest power of 400 W resulted in the best moisture permeation barrier properties. This result was attributed to differences in volume and amount of ion and radical fluxes, to join the ALD process, generated by O 2 plasma as the plasma power changed during ALD process, which was determined using a plasma diagnosis technique called the Floating Harmonic Method (FHM). Plasma diagnosis by FHM revealed an increase in ion flux with increasing plasma power. With respect to the ALD process, our results indicated that higher plasma power generated increased ion and radical flux compared with lower plasma power. Thus, a higher plasma power provides the best gas and moisture permeation barrier properties

Apparatus and method of manufacture for depositing a composite anti-reflection layer on a silicon surface

Science.gov (United States)

Pain, Bedabrata (Inventor)

2012-01-01

An apparatus and associated method are provided. A first silicon layer having at least one of an associated passivation layer and barrier is included. Also included is a composite anti-reflection layer including a stack of layers each with a different thickness and refractive index. Such composite anti-reflection layer is disposed adjacent to the first silicon layer.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

Science.gov (United States)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-05-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

Science.gov (United States)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-02-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

Role of the SiO2 buffer layer thickness in the formation of Si/SiO2/nc-Ge/SiO2 structures by dry oxidation

International Nuclear Information System (INIS)

Kling, A.; Ortiz, M.I.; Prieto, A.C.; Rodriguez, A.; Rodriguez, T.; Jimenez, J.; Ballesteros, C.; Soares, J.C.

2006-01-01

Nanomemories, containing Ge-nanoparticles in a SiO 2 matrix, can be produced by dry thermal oxidation of a SiGe layer deposited onto a Si-wafer with a barrier SiO 2 layer on its top. Rutherford backscattering spectrometry has been used to characterize the kinetics of the oxidation process, the composition profile of the growing oxide, the Ge-segregation and its diffusion into the barrier oxide in samples with thin and thick barrier oxide layers. The Ge segregated during the oxidation of the SiGe layer diffuses into the barrier oxide. In the first case the diffusion through the thin oxide is enhanced by the proximity of the substrate that acts as a sink for the Ge, resulting in the formation of a low Ge concentration SiGe layer in the surface of the Si-wafer. In the second case, the Ge-diffusion progresses as slowly as in bulk SiO 2 . Since barrier oxide layers as thin as possible are favoured for device fabrication, the structures should be oxidized at lower temperatures and the initial SiGe layer thickness reduced to minimize the Ge-diffusion

High-Sensitive Two-Layer Photoresistors Based on p-Cd x Hg1-x Te with a Converted Near-Surface Layer

Science.gov (United States)

Ismailov, N. D.; Talipov, N. Kh.; Voitsekhovskii, A. V.

2018-04-01

The results of an experimental study of photoelectric characteristics of two-layer photoresistors based on p-Cd x Hg1-x Te (x = 0.24-0.28) with a thin near-surface layer of n-type obtained by treatment in atmospheric gas plasma are presented. It is shown that the presence of a potential barrier between the p- and n-regions causes high photosensitivity and speed of operation of such photoresistors at T = 77 K

High-Sensitive Two-Layer Photoresistors Based on p-Cd x Hg1- x Te with a Converted Near-Surface Layer

Science.gov (United States)

Ismailov, N. D.; Talipov, N. Kh.; Voitsekhovskii, A. V.

2018-04-01

The results of an experimental study of photoelectric characteristics of two-layer photoresistors based on p-Cd x Hg1- x Te (x = 0.24-0.28) with a thin near-surface layer of n-type obtained by treatment in atmospheric gas plasma are presented. It is shown that the presence of a potential barrier between the p- and n-regions causes high photosensitivity and speed of operation of such photoresistors at T = 77 K

Design of barrier coatings on kink-resistant peripheral nerve conduits

Directory of Open Access Journals (Sweden)

Basak Acan Clements

2016-02-01

Full Text Available Here, we report on the design of braided peripheral nerve conduits with barrier coatings. Braiding of extruded polymer fibers generates nerve conduits with excellent mechanical properties, high flexibility, and significant kink-resistance. However, braiding also results in variable levels of porosity in the conduit wall, which can lead to the infiltration of fibrous tissue into the interior of the conduit. This problem can be controlled by the application of secondary barrier coatings. Using a critical size defect in a rat sciatic nerve model, the importance of controlling the porosity of the nerve conduit walls was explored. Braided conduits without barrier coatings allowed cellular infiltration that limited nerve recovery. Several types of secondary barrier coatings were tested in animal studies, including (1 electrospinning a layer of polymer fibers onto the surface of the conduit and (2 coating the conduit with a cross-linked hyaluronic acid-based hydrogel. Sixteen weeks after implantation, hyaluronic acid-coated conduits had higher axonal density, displayed higher muscle weight, and better electrophysiological signal recovery than uncoated conduits or conduits having an electrospun layer of polymer fibers. This study indicates that braiding is a promising method of fabrication to improve the mechanical properties of peripheral nerve conduits and demonstrates the need to control the porosity of the conduit wall to optimize functional nerve recovery.

Flexible Ultra Moisture Barrier Film for Thin-Film Photovoltaic Applications

Energy Technology Data Exchange (ETDEWEB)

David M. Dean

2012-10-30

Flexible Thin-film photovoltaic (TFPV) is a low cost alternative to incumbent c-Si PV products as it requires less volume of costly semiconductor materials and it can potentially reduce installation cost. Among the TFPV options, copper indium gallium diselenide (CIGS) has the highest efficiency and is believed to be one of the most attractive candidates to achieve PV cost reduction. However, CIGS cells are very moisture sensitive and require module water vapor transmission rate (WVTR) of less than 1x10-4 gram of water per square meter per day (g-H2O/m2/day). Successful development and commercialization of flexible transparent ultra moisture barrier film is the key to enable flexible CIGS TFPV products, and thus enable ultimate PV cost reduction. At DuPont, we have demonstrated at lab scale that we can successfully make polymer-based flexible transparent ultra moisture barrier film by depositing alumina on polymer films using atomic layer deposition (ALD) technology. The layer by layer ALD approach results in uniform and amorphous structure which effectively reduces pinhole density of the inorganic coating on the polymer, and thus allow the fabrication of flexible barrier film with WVTR of 10-5 g-H2O/m2/day. Currently ALD is a time-consuming process suitable only for high-value, relatively small substrates. To successfully commercialize the ALD-on-plastic technology for the PV industry, there is the need to scale up this technology and improve throughput. The goal of this contract work was to build a prototype demonstrating that the ALD technology could be scaled-up for commercial use. Unfortunately, the prototype failed to produce an ultra-barrier film by the close of the project.

Double Layer Dynamics in a Collisionless Magnetoplasma

DEFF Research Database (Denmark)

Iizuka, S.; Michelsen, Poul; Juul Rasmussen, Jens

and propagation of a double layer. The period of the oscillations is determined by the propagation length of the double layer. The current is limited during the propagation of the double layer by a growing negative potential barrier formed on the low potential tail. Similar phenomena appear when a potential......An experimental investigation of the dynamics of double layers is presented. The experiments are performed in a Q-machine plasma and the double layers are generated by applying a positive step potential to a cold collector plate terminating the plasma column. The double layer is created...... at the grounded plasma source just after the pulse is applied and it propagates towards the collector with a speed around the ion acoustic speed. When the collector is biased positively, large oscillations are obserced in the plasma current. These oscillations are found to be related to a recurring formation...

AA stacking, tribological and electronic properties of double-layer graphene with krypton spacer.

Science.gov (United States)

Popov, Andrey M; Lebedeva, Irina V; Knizhnik, Andrey A; Lozovik, Yurii E; Potapkin, Boris V; Poklonski, Nikolai A; Siahlo, Andrei I; Vyrko, Sergey A

2013-10-21

Structural, energetic, and tribological characteristics of double-layer graphene with commensurate and incommensurate krypton spacers of nearly monolayer coverage are studied within the van der Waals-corrected density functional theory. It is shown that when the spacer is in the commensurate phase, the graphene layers have the AA stacking. For this phase, the barriers to relative in-plane translational and rotational motion and the shear mode frequency of the graphene layers are calculated. For the incommensurate phase, both of the barriers are found to be negligibly small. A considerable change of tunneling conductance between the graphene layers separated by the commensurate krypton spacer at their relative subangstrom displacement is revealed by the use of the Bardeen method. The possibility of nanoelectromechanical systems based on the studied tribological and electronic properties of the considered heterostructures is discussed.

Efficiency enhancement of CIGS compound solar cell fabricated using homomorphic thin Cr{sub 2}O{sub 3} diffusion barrier formed on stainless steel substrate

Energy Technology Data Exchange (ETDEWEB)

Sim, Jae-Kwan; Lee, Seung-Kyu; Kim, Jin-Soo; Jeong, Kwang-Un; Ahn, Haeng-Keun; Lee, Cheul-Ro, E-mail: crlee7@jbnu.ac.kr

2016-12-15

Highlights: • A chromium oxide layer is formed as diffusion barrier by thermal oxidation process on STS substrate. • A Cr{sub 2}O{sub 3} layer effectively reduces impurities diffusion into the CIGS absorber layer. • The Cr{sub 2}O{sub 3} layer plays an important role in increasing the efficiency by reduction of impurity diffusion. - Abstract: It is known that the efficiency of flexible Cu(In,Ga)Se{sub 2} (CIGS) solar cells fabricated on stainless-steel (STS) substrates deteriorates due to iron (Fe) and Cr impurities diffusing into the CIGS absorber layer. To overcome this problem, a nanoscale homomorphic chromium oxide layer was formed as a diffusion barrier by thermal oxidation on the surface of STS substrates for 1 min at 600 °C in oxygen atmosphere. By TEM and grazing-incidence X-ray diffraction (GIXRD), it was confirmed that the formed oxide layer on surface of STS substrates was a Cr{sub 2}O{sub 3} layer. It was found that the formed homomorphic Cr{sub 2}O{sub 3} thin layer of about 15 nm thickness was an effective diffusion barrier to reduce impurity diffusion into the CIGS layer by secondary ion mass spectroscopy (SIMS). In contrast to the efficiency of CIGS solar cell without homomorphic Cr{sub 2}O{sub 3} diffusion layer is 8.6%, whereas with diffusion barrier it increases to 10.6% because of impurities such as Fe and Cr from the STS substrate into the CIGS layer. It reveals that the layer formed on the surface of STS substrate by thermal oxidation process plays an important role in increasing the performance of CIGS solar cells.

Tunneling spin injection into single layer graphene.

Science.gov (United States)

Han, Wei; Pi, K; McCreary, K M; Li, Yan; Wong, Jared J I; Swartz, A G; Kawakami, R K

2010-10-15

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

Demonstration of close-coupled barriers for subsurface containment of buried waste

International Nuclear Information System (INIS)

Heiser, J.; Dwyer, B.

1995-01-01

The primary objective of this project is to develop and demonstrate a close-coupled barrier for the containment of subsurface waste or contaminant migration. A close-coupled barrier is produced by first installing a conventional cement grout curtain followed by a thin lining of a polymer grout. The resultant barrier is a cement polymer composite that has economic benefits derived from the cement and performance benefits from the durable and resistant polymer layer. Close-coupled barrier technology is applicable for final, interim, or emergency containment of subsurface waste forms. Consequently, when considering the diversity of technology application, the construction emplacement and material technology maturity, general site operational requirements, and regulatory compliance incentives, the close-coupled barrier system provides an alternative for any hazardous or mixed waste remediation plan. This paper will discuss the installation of a close-coupled barrier and the subsequent integrity verification. The demonstration will take place at a cold site at the Hanford Geotechnical Test Facility, 400 Area, Hanford, Washington

Controlling effective aspect ratio and packing of clay with pH for improved gas barrier in nanobrick wall thin films.

Science.gov (United States)

Hagen, David A; Saucier, Lauren; Grunlan, Jaime C

2014-12-24

Polymer-clay thin films constructed via layer-by-layer (LbL) assembly, with a nanobrick wall structure (i.e., clay nanoplatelets as bricks surrounded by a polyelectrolyte mortar), are known to exhibit a high oxygen barrier. Further barrier improvement can be achieved by lowering the pH of the clay suspension in the polyethylenimine (PEI) and montmorillonite (MMT) system. In this case, the charge of the deposited PEI layer is increased in the clay suspension environment, which causes more clay to be deposited. At pH 4, MMT platelets deposit with near perfect ordering, observed with transmission electron microscopy, enabling a 5× improvement in the gas barrier for a 10 PEI/MMT bilayer thin film (85 nm) relative to the same film made with pH 10 MMT. This improved gas barrier approaches that achieved with much higher aspect ratio vermiculite clay. In essence, lower pH is generating a higher effective aspect ratio for MMT due to greater induced surface charge in the PEI layers, which causes heavier clay deposition. These flexible, transparent nanocoatings have a wide range of possible applications, from food and electronics packaging to pressurized bladders.

Collective Phenomena In Volume And Surface Barrier Discharges

Science.gov (United States)

Kogelschatz, U.

2010-07-01

Barrier discharges are increasingly used as a cost-effective means to produce non-equilibrium plasmas at atmospheric pressure. This way, copious amounts of electrons, ions, free radicals and excited species can be generated without appreciable gas heating. In most applications the barrier is made of dielectric material. In laboratory experiments also the use of resistive, ferroelectric and semiconducting materials has been investigated, also porous ceramic layers and dielectric barriers with controlled surface conductivity. Major applications utilizing mainly dielectric barriers include ozone generation, surface cleaning and modification, polymer and textile treatment, sterilization, pollution control, CO2 lasers, excimer lamps, plasma display panels (flat TV screens). More recent research efforts are also devoted to biomedical applications and to plasma actuators for flow control. Sinu- soidal feeding voltages at various frequencies as well as pulsed excitation schemes are used. Volume as well as surface barrier discharges can exist in the form of filamentary, regularly patterned or laterally homogeneous discharges. Reviews of the subject and the older literature on barrier discharges were published by Kogelschatz (2002, 2003), by Wagner et al. (2003) and by Fridman et al. (2005). A detailed discussion of various properties of barrier discharges can also be found in the recent book "Non-Equilibrium Air Plasmas at Atmospheric Pressure" by Becker et al. (2005). The physical effects leading to collective phenomena in volume and surface barrier discharges will be discussed in detail. Special attention will be given to self-organization of current filaments. Main similarities and differences of the two types of barrier discharges will be elaborated.

Role of low-order rational surfaces in transport barrier formation on the Large Helical Device

International Nuclear Information System (INIS)

Toi, K.; Tanaka, K.; Watanabe, F.

2010-11-01

In the Large Helical Device, edge transport barrier (ETB) was formed by H-mode transition near the low-order rational surfaces, that is, at the ι/2π=1 resonant layer (ι/2π: the rotational transform) in outward-shifted plasmas of R ax =3.9m (R ax : the magnetic axis position in the vacuum field), and the ι/2π=2 resonant layer in inward-shifted plasmas of R ax =3.6m. The ι/2π=1 and 2 resonant layers reside in the stochastic field region existing just outside the last closed magnetic surface (LCFS). In the outward-shifted plasmas, H-modes without edge localized modes (ELM-free H-modes) followed by giant ELMs were obtained, while H-modes with high frequency and low amplitude ELMs were obtained in the inward-shifted plasmas. A new type of barrier formation induced by TAE bursts was observed in the plasmas of R ax =3.6m, where the transport barrier is formed near the ι/2π=1 surface locates inside LCFS. (author)

HEURISTIC OPTIMIZATION AND ALGORITHM TUNING APPLIED TO SORPTIVE BARRIER DESIGN

Science.gov (United States)

While heuristic optimization is applied in environmental applications, ad-hoc algorithm configuration is typical. We use a multi-layer sorptive barrier design problem as a benchmark for an algorithm-tuning procedure, as applied to three heuristics (genetic algorithms, simulated ...

Development of a cement-polymer close-coupled subsurface barrier technology

International Nuclear Information System (INIS)

Dwyer, B.P.; Heiser, J.; Stewart, W.; Phillips, S.

1997-01-01

The primary objective of this project was to further develop close-coupled barrier technology for the containment of subsurface waste or contaminant migration. A close-coupled barrier is produced by first installing a conventional cement grout curtain followed by a thin inner lining of a polymer grout. The resultant barrier is a cement polymer composite that has economic benefits derived from the cement and performance benefits from the durable and chemically resistant polymer layer. The technology has matured from a regulatory investigation of issues concerning barriers and barrier materials to a pilot-scale, multiple individual column injections at Sandia National Labs (SNL) to full scale demonstration. The feasibility of this barrier concept was successfully proven in a full scale ''cold site'' demonstration at Hanford, WA. Consequently, a full scale deployment of the technology was conducted at an actual environmental restoration site at Brookhaven National Lab (BNL), Long Island, NY. This paper discusses the installation and performance of a technology deployment implemented at OU-1 an Environmental Restoration Site located at BNL

Development of a cement-polymer close-coupled subsurface barrier technology

Energy Technology Data Exchange (ETDEWEB)

Dwyer, B.P. [Sandia National Labs., Albuquerque, NM (United States); Heiser, J. [Brookhaven National Lab., Upton, NY (United States); Stewart, W.; Phillips, S. [Applied Geotechnical Engineering and Construction, Inc., Richland, WA (United States)

1997-02-01

The primary objective of this project was to further develop close-coupled barrier technology for the containment of subsurface waste or contaminant migration. A close-coupled barrier is produced by first installing a conventional cement grout curtain followed by a thin inner lining of a polymer grout. The resultant barrier is a cement polymer composite that has economic benefits derived from the cement and performance benefits from the durable and chemically resistant polymer layer. The technology has matured from a regulatory investigation of issues concerning barriers and barrier materials to a pilot-scale, multiple individual column injections at Sandia National Labs (SNL) to full scale demonstration. The feasibility of this barrier concept was successfully proven in a full scale ``cold site`` demonstration at Hanford, WA. Consequently, a full scale deployment of the technology was conducted at an actual environmental restoration site at Brookhaven National Lab (BNL), Long Island, NY. This paper discusses the installation and performance of a technology deployment implemented at OU-1 an Environmental Restoration Site located at BNL.

Photochemical approach to high-barrier films for the encapsulation of flexible laminary electronic devices

Energy Technology Data Exchange (ETDEWEB)

Prager, L., E-mail: lutz.prager@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Helmstedt, U. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Herrnberger, H. [Solarion AG, Pereser Höhe 1, Breitscheidstraße 45, 04442 Zwenkau (Germany); Kahle, O. [Fraunhofer-Einrichtung für Polymermaterialien und Composite PYCO, Kantstraße 55, 14513 Teltow (Germany); Kita, F. [AZ Electronic Materials Germany GmbH, Rheingaustraße 190-196, 65203 Wiesbaden (Germany); Münch, M. [Solarion AG, Pereser Höhe 1, Breitscheidstraße 45, 04442 Zwenkau (Germany); Pender, A.; Prager, A.; Gerlach, J.W. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Stasiak, M. [Fraunhofer-Einrichtung für Polymermaterialien und Composite PYCO, Kantstraße 55, 14513 Teltow (Germany)

2014-11-03

Based on results of preceding research and development, thin gas barriers were made by wet application of perhydropolysilazane solution onto polymer films and its subsequent photo-initiated conversion to dense silica layers applying vacuum ultraviolet irradiation. Compared to the state of the art, these layers were sufficiently improved and characterized by spectroscopic methods, by scanning electron microscopy and by gas permeation measurements. Water vapor transmission rates (WVTR) below 10{sup −2} g m{sup −2} d{sup −1} were achieved. In this way, single barrier films were developed and produced on a pilot plant from roll to roll, 250 mm wide, at speeds up to 10 m min{sup −1}. Two films were laminated using adhesives curable with ultraviolet (UV) light and evaluated by peel tests, gas permeation measurement and climate testing. It could be shown that the described high-barrier laminates which exhibit WVTR ≈ 5 × 10{sup −4} g m{sup −2} d{sup −1}, determined by the calcium mirror method, are suitable for encapsulation of flexible thin-film photovoltaic modules. Durability of the encapsulated modules could be verified in several climate tests including damp-heat, thermo-cycle (heating, freezing, wetting) and UV exposures which are equivalent to more than 20 years of endurance at outdoor conditions in temperate climate. In the frame of further research and technical development it seems to be possible to design a cost efficient industrial scale process for the production of encapsulation films for photovoltaic applications. - Highlights: • Dense silica barrier layers were developed by a photochemical approach. • Polymer based barrier films were laminated yielding flexible high-barrier films. • Using these laminates photovoltaic test modules were encapsulated and tested. • A durability of more than 20 years at outdoor conditions could be proved.

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

International Nuclear Information System (INIS)

De-Gang, Zhao; Shuang, Zhang; Wen-Bao, Liu; De-Sheng, Jiang; Jian-Jun, Zhu; Zong-Shun, Liu; Hui, Wang; Shu-Ming, Zhang; Hui, Yang; Xiao-Peng, Hao; Long, Wei

2010-01-01

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Note: Inhibiting bottleneck corrosion in electrical calcium tests for ultra-barrier measurements

Energy Technology Data Exchange (ETDEWEB)

Nehm, F., E-mail: frederik.nehm@iapp.de; Müller-Meskamp, L.; Klumbies, H.; Leo, K. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany)

2015-12-15

A major failure mechanism is identified in electrical calcium corrosion tests for quality assessment of high-end application moisture barriers. Accelerated calcium corrosion is found at the calcium/electrode junction, leading to an electrical bottleneck. This causes test failure not related to overall calcium loss. The likely cause is a difference in electrochemical potential between the aluminum electrodes and the calcium sensor, resulting in a corrosion element. As a solution, a thin, full-area copper layer is introduced below the calcium, shifting the corrosion element to the calcium/copper junction and inhibiting bottleneck degradation. Using the copper layer improves the level of sensitivity for the water vapor transmission rate (WVTR) by over one order of magnitude. Thin-film encapsulated samples with 20 nm of atomic layer deposited alumina barriers this way exhibit WVTRs of 6 × 10{sup −5} g(H{sub 2}O)/m{sup 2}/d at 38 °C, 90% relative humidity.

Transmission electron microscopy study for investigating high-temperature reliability of Ti10W90-based and Ta-based diffusion barriers up to 600 C

International Nuclear Information System (INIS)

Budhiman, Nando; Schuermann, Ulrich; Kienle, Lorenz; Jensen, Bjoern; Chemnitz, Steffen; Wagner, Bernhard

2016-01-01

Abstractauthoren Transmission electron microscopy (TEM) analysis, including energy dispersive X-ray (EDX) (elemental mapping, line, and point measurements) and energy filtered TEM (EFTEM) methods, is applied to investigate the high temperature reliability, especially material diffusion, of two types of diffusion barriers: titanium-tungsten-based (Ti 10 W 90 -based) and tantalum-based (Ta-based), with nickel (Ni) layer on top. Both barriers were deposited as a form of stacked layers on sili-con (Si) wafers using the physical vapor deposition (PVD) technique. TEM analysis is performed on both barriers before and after annealing (at 600 C for 24 h inside a vacuum chamber). No diffusion of material into the Si substrate as observed. Additionally, only diffusion between the Ni and adjoining Ti 10 W 90 layers, and between Ni and adjoining Ta layers in the Ti 10 W 90 -based and Ta-based barriers, respectively, are observed due to annealing. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Oxide growth and damage evolution in thermal barrier coatings

NARCIS (Netherlands)

Hille, T.S.; Turteltaub, S.R.; Suiker, A.S.J.

2011-01-01

Cracking in thermal barrier coatings (TBC) is triggered by the development of a thermally-grown oxide (TGO) layer that develops during thermal cycling from the oxidation of aluminum present in the bond coat (BC). In the present communication a numerical model is presented that describes the

Design and validation of a microfluidic device for blood-brain barrier monitoring and transport studies

Science.gov (United States)

Ugolini, Giovanni Stefano; Occhetta, Paola; Saccani, Alessandra; Re, Francesca; Krol, Silke; Rasponi, Marco; Redaelli, Alberto

2018-04-01

In vitro blood-brain barrier models are highly relevant for drug screening and drug development studies, due to the challenging task of understanding the transport mechanism of drug molecules through the blood-brain barrier towards the brain tissue. In this respect, microfluidics holds potential for providing microsystems that require low amounts of cells and reagent and can be potentially multiplexed for increasing the ease and throughput of the drug screening process. We here describe the design, development and validation of a microfluidic device for endothelial blood-brain barrier cell transport studies. The device comprises of two microstructured layers (top culture chamber and bottom collection chamber) sandwiching a porous membrane for the cell culture. Microstructured layers include two pairs of physical electrodes, embedded into the device layers by geometrically defined guiding channels with computationally optimized positions. These electrodes allow the use of commercial electrical measurement systems for monitoring trans-endothelial electrical resistance (TEER). We employed the designed device for performing preliminary assessment of endothelial barrier formation with murine brain endothelial cells (Br-bEnd5). Results demonstrate that cellular junctional complexes effectively form in the cultures (expression of VE-Cadherin and ZO-1) and that the TEER monitoring systems effectively detects an increase of resistance of the cultured cell layers indicative of tight junction formation. Finally, we validate the use of the described microsystem for drug transport studies demonstrating that Br-bEnd5 cells significantly hinder the transport of molecules (40 kDa and 4 kDa dextran) from the top culture chamber to the bottom collection chamber.

Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

International Nuclear Information System (INIS)

Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

2014-01-01

We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection

Tritium permeation barriers in contact with liquid lithium-lead eutectic (Pb-17Li)

International Nuclear Information System (INIS)

Forcey, K.S.; Perujo, A.

1995-01-01

The permeation of deuterium through coated stainless steel tubes containing liquid lithium-lead eutectic (Pb-17Li) has been studied and compared to measurements through tubes without the lithium compound. The measurements form part of an investigation into the effect of a potential tritium breeder material on permeation barriers for fusion reactors. The coatings studied were CVD TiC and Al 2 O 3 and a pack aluminised layer. Without the lithium-lead, the CVD coatings reduced the permeation rate up to 1 order of magnitude, and the aluminised layer up to 2 orders of magnitude. A CVD layer was unaffected by Pb-17Li whilst in the case of the aluminised tube, the lithium-lead completely removed the permeation barrier, presumably by attacking the surface oxide. Furthermore, the aluminised sample presented a large number of cracks and poor adheren ce to the substrate. ((orig.))

Adhesion, resistivity and structural, optical properties of molybdenum on steel sheet coated with barrier layer done by sol–gel for CIGS solar cells

Energy Technology Data Exchange (ETDEWEB)

Amouzou, Dodji, E-mail: dodji.amouzou@fundp.ac.be [Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles 61, 5000 Namur (Belgium); Dumont, Jacques [Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles 61, 5000 Namur (Belgium); Fourdrinier, Lionel; Richir, Jean-Baptiste; Maseri, Fabrizio [CRM-Group, Boulevard de Colonster, B 57, 4000 Liège (Belgium); Sporken, Robert [Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles 61, 5000 Namur (Belgium)

2013-03-01

Molybdenum films are investigated on stainless steel substrates coated with polysilazane based sol–gel and SiO{sub x} layers for flexible CIGS solar cell applications. Thermal stability of the multilayer has been studied. The thickness of polysilazane films are significantly reduced (17%) after heat treatment suggesting a thermal degradation. Four different microstructures were found for Mo films by varying argon total pressure from 2.6 × 10{sup −1} Pa to 2.6 Pa. It was shown that continuous films, low sheet resistance (0.5 Ω/□) and well facetted grains can be achieved when Mo films are deposited on heated substrates at homologous temperature, T of 0.2. - Highlights: ► Steel sheet is functionalized for Cu[Inx,Ga(1 − x)Se2] solar cells. ► Varying deposition pressure impacts the microstructure of Mo films. ► High thermal stability of the sol gel based barrier layer has been investigated. ► Low sheet resistance and continuous Mo films have been obtained at 550°C. ► Thermal stability of functionalized steel sheets at 550°C has been investigated.

Permeation barrier properties of thin oxide films on flexible polymer substrates

International Nuclear Information System (INIS)

Fahlteich, John; Fahland, Matthias; Schoenberger, Waldemar; Schiller, Nicolas

2009-01-01

Solar cells and organic electronic devices require an encapsulation to ensure sufficient lifetime. Key parameters of the encapsulation are permeation barrier, UV stability, temperature stability, optical transmission spectra and mechanical stability. The requirements depend very much on the specific application. Many work groups suggest multilayer stacks to meet the permeation requirements. In this paper the permeation barrier properties of the different constituents of such a multilayer stack are characterized. Different layer materials are compared regarding their water vapour and oxygen permeability as well as the influence of process parameters is examined. Finally temperature dependent permeation measurements are used to characterize the permeation mechanisms in the different constituents of the multilayer barrier

THE FORMATION AND CHARACTERIZATION OF SUSTAINABLE LAYERED FILMS INCORPORATING MICROFIBRILLATED CELLULOSE (MFC)

OpenAIRE

Galina Rodionova,; Solenne Roudot; , Øyvind Eriksen,; Ferdinand Männle,; Øyvind Gregersen

2012-01-01

Microfibrillated cellulose (MFC), TEMPO-pretreated MFC, and hybrid polymer/MFC mix were used for the production of layered films with interesting properties for application in food packaging. The series of samples were prepared from MFC (base layers) using a dispersion-casting method. The same procedure as well as a bar coating technique was applied to form top layers of different basis weights. The barrier properties and formation of the layered films were investigated in relationship to the...

Biointrusion test plan for the Permanent Isolation Surface Barrier Prototype

International Nuclear Information System (INIS)

Link, S.O.; Cadwell, L.L.; Brandt, C.A.; Downs, J.L.; Rossi, R.E.; Gee, G.W.

1994-04-01

This document provides a testing and monitoring plan for the biological component of the prototype barrier slated for construction at the Hanford Site. The prototype barrier is an aboveground structure engineered to demonstrate the basic features of an earthen cover system. It is designed to permanently isolate waste from the biosphere. The features of the barrier include multiple layers of soil and rock materials and a low-permeability asphalt sublayer. The surface of the barrier consists of silt loam soil, covered with plants. The barrier sides are reinforced with rock or coarse earthen-fill to protect against wind and water erosion. The sublayers inhibit plant and animal intrusion and percolation of water. A series of tests will be conducted on the prototype barrier over the next several years to evaluate barrier performance under extreme climatic conditions. Plants and animals will play a significant role in the hydrologic and water and wind erosion characteristics of the prototype barrier. Studies on the biological component of the prototype barrier will include work on the initial revegetation of the surface, continued monitoring of the developing plant community, rooting depth and dispersion in the context of biointrusion potential, the role of plants in the hydrology of the surface and toe regions of the barrier, the role of plants in stabilizing the surface against water and wind erosion, and the role of burrowing animals in the hydrology and water and wind erosion of the barrier

The effectiveness of Ti implants as barriers to carbon diffusion in Ti implanted steel under CVD diamond deposition conditions

Energy Technology Data Exchange (ETDEWEB)

Weiser, P.S.; Prawer, S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Hoffman, A. [Technion-Israel Inst. of Tech., Haifa (Israel). Dept. of Chemistry; Evan, P.J. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Paterson, P.J.K. [Royal Melbourne Inst. of Tech., VIC (Australia)

1993-12-31

The growth of chemical vapour deposited (CVD) diamond onto iron based substrates complicated by preferential soot formation and carbon diffusion into the substrate [1], leading to poor quality films and poor adhesion. In the initial stages of exposure to a microwave plasma, a layer of graphite is rapidly formed on an untreated Fe based substrate. Once this graphite layer reaches a certain thickness, reasonable quality diamond nucleates and grows upon it. However, the diamond film easily delaminates from the substrate, the weak link being the graphitic layer. Following an initial success in using a TiN barrier layer to inhibit the formation of such a graphitic layer the authors report on attempts to use an implanted Ti layer for the same purpose. This work was prompted by observation that, although the TiN proved to be an extremely effective diffusion barrier, adhesion may be further enhanced by the formation of a TiC interface layer between the diamond film and the Fe substrate. 3 refs., 6 figs.

The effectiveness of Ti implants as barriers to carbon diffusion in Ti implanted steel under CVD diamond deposition conditions

International Nuclear Information System (INIS)

Weiser, P.S.; Prawer, S.; Paterson, P.J.K.

1993-01-01

The growth of chemical vapour deposited (CVD) diamond onto iron based substrates complicated by preferential soot formation and carbon diffusion into the substrate [1], leading to poor quality films and poor adhesion. In the initial stages of exposure to a microwave plasma, a layer of graphite is rapidly formed on an untreated Fe based substrate. Once this graphite layer reaches a certain thickness, reasonable quality diamond nucleates and grows upon it. However, the diamond film easily delaminates from the substrate, the weak link being the graphitic layer. Following an initial success in using a TiN barrier layer to inhibit the formation of such a graphitic layer the authors report on attempts to use an implanted Ti layer for the same purpose. This work was prompted by observation that, although the TiN proved to be an extremely effective diffusion barrier, adhesion may be further enhanced by the formation of a TiC interface layer between the diamond film and the Fe substrate. 3 refs., 6 figs

The effectiveness of Ti implants as barriers to carbon diffusion in Ti implanted steel under CVD diamond deposition conditions

Energy Technology Data Exchange (ETDEWEB)

Weiser, P S; Prawer, S [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Hoffman, A [Technion-Israel Inst. of Tech., Haifa (Israel). Dept. of Chemistry; Evan, P J [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Paterson, P J.K. [Royal Melbourne Inst. of Tech., VIC (Australia)

1994-12-31

The growth of chemical vapour deposited (CVD) diamond onto iron based substrates complicated by preferential soot formation and carbon diffusion into the substrate [1], leading to poor quality films and poor adhesion. In the initial stages of exposure to a microwave plasma, a layer of graphite is rapidly formed on an untreated Fe based substrate. Once this graphite layer reaches a certain thickness, reasonable quality diamond nucleates and grows upon it. However, the diamond film easily delaminates from the substrate, the weak link being the graphitic layer. Following an initial success in using a TiN barrier layer to inhibit the formation of such a graphitic layer the authors report on attempts to use an implanted Ti layer for the same purpose. This work was prompted by observation that, although the TiN proved to be an extremely effective diffusion barrier, adhesion may be further enhanced by the formation of a TiC interface layer between the diamond film and the Fe substrate. 3 refs., 6 figs.

Oxygen- and water-induced degradation of an inverted polymer solar cell: the barrier effect

DEFF Research Database (Denmark)

Vesterager Madsen, Morten; Norrman, Kion; Krebs, Frederik C

2011-01-01

The work focuses on the degradation of performance induced by both water and oxygen in an inverted geometry organic photovoltaic device with emphasis on the accumulated barrier effect of the layers comprising the layer stack. By studying the exchange of oxygen in the zinc oxide (ZnO) layer...... in the humid atmosphere, correlating well with a long observed lifetime in the same atmosphere.© 2011 Society of Photo-Optical Instrumentation Engineers....

THERMAL PROPERTIES OF TRANSPARENT BARRIER MODIFIED WITH ORGANIC PCMS

Directory of Open Access Journals (Sweden)

Michał MUSIAŁ

2016-03-01

Full Text Available Renewable energy sources are increasingly often applied in civil engineering as a mean to reduce buildings energy demand for heating. One of the ways to reduce HVAC energy demand is to limit heat transfer and excessive solar gain through building's glazed barriers. Preliminary results of the research conducted on organic PCM-modified transparent barrier are presented in this paper. Multiple publications concerning PCMs application in structural materials have recently appeared. Most of them are focused on modification of structure of non-transparent sections of buildings' envelope. Augmenting a glazed barrier with PCMs increases its heat capacity and thermal resistance. The most important feature of the assembly is the thermal buffer, a product of PCM's considerable value of specific latent heat. Research were conducted on a triple-pane transparent rectangular barrier, that constituted one of the faces of cubic chamber. Internal volume of the chamber was 1m3. The applied PCM was a mixture of saturated and non-saturated hydrocarbons. The described assembly was subjected to temperature and radiation that occur in Poland during winter. Glazing temperature, melted/total PCM ratio were measured, as well as energy demand for keeping internal temperature at constant level. Measurements were made in steady states, for various PCM layer thickness. The influence of the modification on energy demand was determined, along with the most effective and rational thickness of PCM layer to be applied. Conducted research enabled to develop a basis for further investigation of PCMs application in civil engineering.

Simultaneous cell death and desquamation of the embryonic diffusion barrier during epidermal development

International Nuclear Information System (INIS)

Saathoff, Manuela; Blum, Barbara; Quast, Thomas; Kirfel, Gregor; Herzog, Volker

2004-01-01

The periderm is an epithelial layer covering the emerging epidermis in early embryogenesis of vertebrates. In the chicken embryo, an additional cellular layer, the subperiderm, occurs at later embryonic stages underneath the periderm. The questions arose what is the function of both epithelial layers and, as they are transitory structures, by which mechanism are they removed. By immunocytochemistry, the tight junction (TJ) proteins occludin and claudin-1 were localized in the periderm and in the subperiderm, and sites of close contact between adjacent cells were detected by electron microscopy. Using horseradish peroxidase (HRP) as tracer, these contacts were identified as tight junctions involved in the formation of the embryonic diffusion barrier. This barrier was lost by desquamation at the end of the embryonic period, when the cornified envelope of the emerging epidermis was formed. By TUNEL and DNA ladder assays, we detected simultaneous cell death in the periderm and the subperiderm shortly before hatching. The absence of caspases-3, -6, and -7 activity, key enzymes of apoptosis, and the lack of typical morphological criteria of apoptosis such as cell fragmentation or membrane blebbing point to a special form of programmed cell death (PCD) leading to the desquamation of the embryonic diffusion barrier

Structure and Barrier Properties of Multinanolayered Biodegradable PLA/PBSA Films: Confinement Effect via Forced Assembly Coextrusion.

Science.gov (United States)

Messin, Tiphaine; Follain, Nadège; Guinault, Alain; Sollogoub, Cyrille; Gaucher, Valérie; Delpouve, Nicolas; Marais, Stéphane

2017-08-30

Multilayer coextrusion processing was applied to produce 2049-layer film of poly(butylene succinate-co-butylene adipate) (PBSA) confined against poly(lactic acid) (PLA) using forced assembly, where the PBSA layer thickness was about 60 nm. This unique technology allowed to process semicrystalline PBSA as confined polymer and amorphous PLA as confining polymer in a continuous manner. The continuity of PBSA layers within the 80/20 wt % PLA/PBSA layered films was clearly evidenced by atomic force microscopy (AFM). Similar thermal events to the reference films were revealed by thermal studies; indicating no diffusion of polymers during the melt-processing. Mechanical properties were measured for the multilayer film and the obtained results were those expected considering the fraction of each polymer, revealing the absence of delamination in the PLA/PBSA multinanolayer film. The confinement effect induced by PLA led to a slight orientation of the crystals, an increase of the rigid amorphous fraction (RAF) in PBSA with a densification of this fraction without changing film crystallinity. These structural changes allowed to strongly improve the water vapor and gas barrier properties of the PBSA layer into the multilayer film up to two decades in the case of CO 2 gas. By confining the PBSA structure in very thin and continuous layers, it was then possible to improve the barrier performances of a biodegradable system and the resulting barrier properties were successfully correlated to the effect of confinement on the microstructure and the chain segment mobility of the amorphous phase. Such investigation on these multinanolayers of PLA/PBSA with the aim of evidencing relationships between microstructure implying RAF and barrier performances has never been performed yet. Besides, gas and water permeation results have shown that the barrier improvement obtained from the multilayer was mainly due to the reduction of solubility linked to the reduction of the free volume while

Spectroscopy of bulk and few-layer superconducting NbSe2 with van der Waals tunnel junctions.

Science.gov (United States)

Dvir, T; Massee, F; Attias, L; Khodas, M; Aprili, M; Quay, C H L; Steinberg, H

2018-02-09

Tunnel junctions, an established platform for high resolution spectroscopy of superconductors, require defect-free insulating barriers; however, oxides, the most common barrier, can only grow on a limited selection of materials. We show that van der Waals tunnel barriers, fabricated by exfoliation and transfer of layered semiconductors, sustain stable currents with strong suppression of sub-gap tunneling. This allows us to measure the spectra of bulk (20 nm) and ultrathin (3- and 4-layer) NbSe 2 devices at 70 mK. These exhibit two distinct superconducting gaps, the larger of which decreases monotonically with thickness and critical temperature. The spectra are analyzed using a two-band model incorporating depairing. In the bulk, the smaller gap exhibits strong depairing in in-plane magnetic fields, consistent with high out-of-plane Fermi velocity. In the few-layer devices, the large gap exhibits negligible depairing, consistent with out-of-plane spin locking due to Ising spin-orbit coupling. In the 3-layer device, the large gap persists beyond the Pauli limit.

Charge-carrier transport in epitactical strontium titanate layers for the application in superconducting components

International Nuclear Information System (INIS)

Grosse, Veit

2011-01-01

In this thesis thin STO layers were epitactically deposited on YBCO for a subsequent electrical characterization. YBCO layers with a roughness of less than 2 nm (RMS), good out-of-plane orientation with a half-width in the rocking curve in the range (0.2..0.3) at only slightly diminished critical temperature could be reached. The STO layers exhibited also very good crystallographic properties. The charge-carrier transport in STO is mainly dominated by interface-limited processes. By means of an in thesis newly developed barrier model thereby the measured dependencies j(U,T) respectively σ(U,T) could be described very far-reachingly. At larger layer thicknesses and low temperatures the charge-carrier transport succeeds by hopping processes. So in the YBCO/STO/YBCO system the variable-range hopping could be identified as dominating transport process. Just above U>10 V a new behaviour is observed, which concerning its temperature dependence however is also tunnel-like. The STO layers exhibit here very large resistances, so that fields up to 10 7 ..10 8 V/m can be reached without flowing of significant leakage currents through the barrier. In the system YBCO/STO/Au the current transport can be principally in the same way as in the YBCO/STO/YBCO system. The special shape and above all the asymmetry of the barrier however work out very distinctly. It could be shown that at high temperatures according to the current direction a second barrier on the opposite electrode must be passed. So often observed breakdown effects can be well described. For STO layer-thicknesses in the range around 25 nm in the whole temperature range studied inelastic tunneling over chains of localized states was identified as dominating transport process. It could however for the first time be shown that at very low temperatures in the STO layers Coulomb blockades can be formed.

Barrier Performance of CVD Graphene Films Using a Facile P3HT Thin Film Optical Transmission Test

Directory of Open Access Journals (Sweden)

Srinivasa Kartik Nemani

2018-01-01

Full Text Available The barrier performance of CVD graphene films was determined using a poly(3-hexylthiophene (P3HT thin film optical transmission test. P3HT is a semiconducting polymer that photo-oxidatively degrades upon exposure to oxygen and light. The polymer is stable under ambient conditions and indoor lighting, enabling P3HT films to be deposited and encapsulated in air. P3HT’s stability under ambient conditions makes it desirable for an initial evaluation of barrier materials as a complimentary screening method in combination with conventional barrier tests. The P3HT test was used to demonstrate improved barrier performance for polymer substrates after addition of CVD graphene films. A layer-by-layer transfer method was utilized to enhance the barrier performance of monolayer graphene. Another set of absorption measurements were conducted to demonstrate the barrier performance of graphene and the degradation mechanism of graphene/P3HT over multiple wavelengths from 400 to 800 nm. The absorption spectra for graphene/polymer composite were simulated by solving Fresnel equations. The simulation results were found to be in good agreement with the measured absorption spectra. The P3HT degradation results qualitatively indicate the potential of graphene films as a possible candidate for medium performance barriers.

Long term performance of the Waterloo denitrification barrier

International Nuclear Information System (INIS)

Robertson, W.D.; Cherry, J.A.

1997-01-01

Beginning in 1991 a series of laboratory tests and small scale field trials were initiated to test the performance of an innovative permeable reactive barrier for treatment of nitrate from septic systems. The barrier promotes denitrification by providing an energy source in the form of solid organic carbon mixed into the porous media material. Advantages of the system for nitrate treatment are that the reaction is passive and in situ and it is possible to incorporate sufficient carbon mass in conveniently sized barriers to potentially provide treatment for long periods (decades) without the necessity for maintenance. However, longevity can only be demonstrated by careful long term monitoring of field installations. This paper documents four years of operating history at three small scale field trials; two where the denitrification barrier is installed as a horizontal layer positioned in the unsaturated zone below conventional septic system infiltration beds and one where the barrier is installed as a vertical wall intercepting a septic system plume at a downgradient location. The barriers have successfully attenuated 50-100% of NO - 3 -N levels of up to 170 mg/L and treatment has remained consistent over the four year period in each case, thus considerable longevity is indicated. Other field trials have demonstrated this technology to be equally effective in treating nitrogen contamination from other sources such as landfill leachate and farm field runoff

In-situ fabrication of MoSi2/SiC–Mo2C gradient anti-oxidation coating on Mo substrate and the crucial effect of Mo2C barrier layer at high temperature

International Nuclear Information System (INIS)

Liu, Jun; Gong, Qianming; Shao, Yang; Zhuang, Daming; Liang, Ji

2014-01-01

MoSi 2 /SiC–Mo 2 C gradient coating on molybdenum was in situ prepared with pack cementation process by two steps: (1) carburizing with graphite powder to obtain a Mo 2 C layer on Mo substrate, and (2) siliconizing with Si powder to get a composite MoSi 2 /SiC layer on the upper part of Mo 2 C layer. The microstructure and elemental distribution in the coating were investigated with scanning electron microscopy (SEM), backscattered electron (BSE), energy dispersive spectroscopy (EDS), electron probe microanalysis (EPMA) and X-ray diffraction (XRD). Cyclic oxidation tests (at 500 °C, 1200 °C, 1400 °C and 1600 °C) demonstrated excellent oxidation resistance for the gradient composite coating and the mass loss was only 0.23% in 60 min at 1600 °C. XRD, EPMA, thermal dynamic and phase diagram analyses indicated that the Mo 2 C barrier layer played the key role in slowing down the diffusion of C and Si toward inner Mo substrate at high temperature and principally this contributed to the excellent anti-oxidation for Mo besides the outer MoSi 2 /SiC composite layer.

Coulomb oscillations in three-layer graphene nanostructures

International Nuclear Information System (INIS)

Guettinger, J; Stampfer, C; Molitor, F; Graf, D; Ihn, T; Ensslin, K

2008-01-01

We present transport measurements on a tunable three-layer graphene single electron transistor (SET). The device consists of an etched three-layer graphene flake with two narrow constrictions separating the island from source and drain contacts. Three lateral graphene gates are used to electrostatically tune the device. An individual three-layer graphene constriction has been investigated separately showing a transport gap near the charge neutrality point. The graphene tunneling barriers show a strongly nonmonotonic coupling as a function of gate voltage indicating the presence of localized states in the constrictions. We show Coulomb oscillations and Coulomb diamond measurements proving the functionality of the graphene SET. A charging energy of ∼0.6 meV is extracted.

Engineering an in vitro air-blood barrier by 3D bioprinting

Science.gov (United States)

Horváth, Lenke; Umehara, Yuki; Jud, Corinne; Blank, Fabian; Petri-Fink, Alke; Rothen-Rutishauser, Barbara

2015-01-01

Intensive efforts in recent years to develop and commercialize in vitro alternatives in the field of risk assessment have yielded new promising two- and three dimensional (3D) cell culture models. Nevertheless, a realistic 3D in vitro alveolar model is not available yet. Here we report on the biofabrication of the human air-blood tissue barrier analogue composed of an endothelial cell, basement membrane and epithelial cell layer by using a bioprinting technology. In contrary to the manual method, we demonstrate that this technique enables automatized and reproducible creation of thinner and more homogeneous cell layers, which is required for an optimal air-blood tissue barrier. This bioprinting platform will offer an excellent tool to engineer an advanced 3D lung model for high-throughput screening for safety assessment and drug efficacy testing. PMID:25609567

Trends in drug delivery through tissue barriers containing tight junctions.

Science.gov (United States)

Tscheik, Christian; Blasig, Ingolf E; Winkler, Lars

2013-04-01

A limitation in the uptake of many drugs is the restricted permeation through tissue barriers. There are two general ways to cross barriers formed by cell layers: by transcytosis or by diffusion through the intercellular space. In the latter, tight junctions (TJs) play the decisive role in the regulation of the barrier permeability. Thus, transient modulation of TJs is a potent strategy to improve drug delivery. There have been extensive studies on surfactant-like absorption enhancers. One of the most effective enhancers found is sodium caprate. However, this modulates TJs in an unspecific fashion. A novel approach would be the specific modulation of TJ-associated marvel proteins and claudins, which are the main structural components of the TJs. Recent studies have identified synthetic peptidomimetics and RNA interference techniques to downregulate the expression of targeted TJ proteins. This review summarizes current progress and discusses the impact on TJs' barrier function.

Barrier inhomogeneities at vertically stacked graphene-based heterostructures.

Science.gov (United States)

Lin, Yen-Fu; Li, Wenwu; Li, Song-Lin; Xu, Yong; Aparecido-Ferreira, Alex; Komatsu, Katsuyoshi; Sun, Huabin; Nakaharai, Shu; Tsukagoshi, Kazuhito

2014-01-21

The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of temperature and gate voltage. The results offer significant insight for the development of future layer-integration technology based on graphene-based heterostructures.

Self-Supporting High Performance Multi-Layer Insulation Technology Development (SSMLI)

Data.gov (United States)

National Aeronautics and Space Administration — A new type of MLI—Integrated Multi-Layer Insulation (IMLI)—uses rigid, low-conductivity polymer spacers instead of netting to keep the radiation barriers separated....

Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

Energy Technology Data Exchange (ETDEWEB)

Piquemal-Banci, M.; Galceran, R.; Bouzehouane, K.; Anane, A.; Petroff, F.; Fert, A.; Dlubak, B.; Seneor, P. [Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, Palaiseau 91767 (France); Caneva, S.; Martin, M.-B.; Weatherup, R. S.; Kidambi, P. R.; Robertson, J.; Hofmann, S. [Department of Engineering, University of Cambridge, Cambridge CB21PZ (United Kingdom); Xavier, S. [Thales Research and Technology, 1 avenue Augustin Fresnel, Palaiseau 91767 (France)

2016-03-07

We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions (MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer.

Penetration of a dielectric barrier discharge plasma into textile structures at medium pressure

International Nuclear Information System (INIS)

Geyter, N De; Morent, R; Leys, C

2006-01-01

Plasma treatment of textiles is becoming more and more popular as a surface modification technique. Plasma treatment changes the outermost layer of a material without interfering with the bulk properties. However, textiles are several millimetres thick and need to be treated homogeneously throughout the entire thickness. To control the penetration depth of the plasma effect, it is necessary to study the influence of operating parameters. Three layers of a 100% polyester non-woven are treated in the medium pressure range (0.3-7 kPa) with a dielectric barrier discharge to study the influence of pressure and treatment time. Current and voltage waveforms and Lichtenberg figures are used to characterize the discharge. Process pressure proved to have an important effect on the penetration of the plasma through the textile layers. This is caused not only by the pressure dependence of diffusive transport of textile modifying particles but also by a different behaviour of the barrier discharge

Formation of edge transport barrier in the ergodic field layer of helical divertor configuration on the Large Helical Device

International Nuclear Information System (INIS)

Toi, K; Ohdachi, S; Watanabe, F; Narihara, K; Morisaki, T; Sakakibara, S; Morita, S; Goto, M; Ida, K; Masuzaki, S; Miyazawa, K; Tanaka, K; Tokuzawa, T; Watanabe, K W; Yoshinuma, M

2006-01-01

On the Large Helical Device (LHD), low to high confinement (L-H) transition and edge transport barrier (ETB) formation were observed in the low beta regime ((β dia ) dia ): volume-averaged beta derived from diamagnetic measurement) as well as in relatively high beta regime (>1.5%). In most of ETB plasmas electron density preferentially increases in the edge region without a substantial rise of the edge electron temperature. The ETB zone develops inside the ergodic field layer calculated in the vacuum field. The ETB formation strongly destabilizes edge coherent modes such as m/n = 2/3 or 1/2 (m, n: poloidal and toroidal mode numbers), because the plasma edge region is in the magnetic hill. The ETB is partially destroyed by the combination of these edge MHD modes and ELM-like activities. For a particular experimental condition, the forced generation of a sizable m/n = 1/1 magnetic island near the edge by application of external field perturbations facilitates the L-H transition at a lower electron density and suppresses edge MHD modes and ELM-like activities to lower levels

The impact of porosity on the formation of manganese based copper diffusion barrier layers on low-κ dielectric materials

International Nuclear Information System (INIS)

McCoy, A P; Bogan, J; Walsh, L; Byrne, C; O’Connor, R; Hughes, G; Woicik, J C

2015-01-01

This work investigates the impact of porosity in low-κ dielectric materials on the chemical and structural properties of deposited Mn thin films for copper diffusion barrier layer applications. X-ray photoelectron spectrscopy (XPS) results highlight the difficulty in distinguishing between the various Mn oxidation states which form at the interlayer dielectric (ILD)/Mn interface. The presence of MnSiO 3 and MnO were identified using x-ray absorption spectroscopy (XAS) measurements on both porous and non-porous dielectric materials with evidence of Mn 2 O 3 and Mn 3 O 4 in the deposited film on the latter surface. It is shown that a higher proportion of deposited Mn converts to Mn silicate on an ILD film which has 50% porosity compared with the same dielectric material with no porosity, which is attributed to an enhanced chemical interaction with the effective larger surface area of porous dielectric materials. Transmission electron microscopy (TEM) and energy-dispersive x-ray spectroscopy (EDX) data shows that the Mn overlayer remains predominately surface localised on both porous and non-porous materials. (paper)

Dielectric barrier discharges applied for soft ionization and their mechanism

Energy Technology Data Exchange (ETDEWEB)

Brandt, Sebastian; Klute, Felix David; Schütz, Alexander; Franzke, Joachim, E-mail: joachim.franzke@isas.de

2017-01-25

Dielectric barrier discharges are used for analytical applications as dissociative source for optical emission spectrometry and for ambient-ionization techniques. In the range of ambient-ionization techniques it has attracted much attention in fields like food safety, biological analysis, mass spectrometry for reaction monitoring and imaging forensic identification. In this review some examples are given for the application as desorption/ionization source as well as for the sole application as ionization source with different sample introductions. It will be shown that the detection might depend on the certain distance of the plasma in reference to the sample or the kind of discharge which might be produced by different shapes of the applied high voltage. Some attempts of characterization are presented. A more detailed characterization of the dielectric barrier discharge realized with two ring electrodes, each separately covered with a dielectric layer, is described. - Highlights: • Dielectric barrier discharge applied as desorption/ionization source. • Dielectric barrier discharge applied solely as ionization source. • Different geometries in order to maintain soft ionization. • Characterization of the LTP probe. • Dielectric barrier discharges with two dielectric barriers (ring-ring shape).

Results from transient transport experiments in Rijnhuizen tokamak project: Heat convection, transport barriers and 'non-local' effects

International Nuclear Information System (INIS)

Mantica, P.; Gorini, G.; Hogeweij, G.M.D.; Kloe, J. de; Lopez Cardozo, N.J.; Schilham, A.M.R.

2001-01-01

An overview of experimental transport studies performed on the Rijnhuizen Tokamak Project (RTP) using transient transport techniques in both Ohmic and ECH dominated plasmas is presented. Modulated Electron Cyclotron Heating (ECH) and oblique pellet injection (OPI) have been used to induce electron temperature (T e ) perturbations at different radial locations. These were used to probe the electron transport barriers observed near low order rational magnetic surfaces in ECH dominated steady-state RTP plasmas. Layers of inward electron heat convection in off-axis ECH plasmas were detected with modulated ECH. This suggests that RTP electron transport barriers consist of heat pinch layers rather than layers of low thermal diffusivity. In a different set of experiments, OPI triggered a transient rise of the core T e due to an increase of the T e gradient in the 1< q<2 region. These transient transport barriers were probed with modulated ECH and found to be due to a transient drop of the electron heat diffusivity, except for off-axis ECH plasmas, where a transient inward pinch is also observed. Transient transport studies in RTP could not solve this puzzling interplay between heat diffusion and convection in determining an electron transport barrier. They nevertheless provided challenging experimental evidence both for theoretical modelling and for future experiments. (author)

Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction

Science.gov (United States)

Gui-fang, Li; Jing, Hu; Hui, Lv; Zhijun, Cui; Xiaowei, Hou; Shibin, Liu; Yongqian, Du

2016-02-01

We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co2MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance-area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height (SBH) occurs following the insertion of the graphene layer between Co2MnSi and Ge. The electron SBH is modulated in the 0.34 eV-0.61 eV range. Furthermore, the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility. Project supported by the National Natural Science Foundation of China (Grant No. 61504107) and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 3102014JCQ01059 and 3102015ZY043).

Weaning stress and gastrointestinal barrier development: Implications for lifelong gut health in pigs

Directory of Open Access Journals (Sweden)

Adam J. Moeser

2017-12-01

Full Text Available The gastrointestinal (GI barrier serves a critical role in survival and overall health of animals and humans. Several layers of barrier defense mechanisms are provided by the epithelial, immune and enteric nervous systems. Together they act in concert to control normal gut functions (e.g., digestion, absorption, secretion, immunity, etc. whereas at the same time provide a barrier from the hostile conditions in the luminal environment. Breakdown of these critical GI functions is a central pathophysiological mechanism in the most serious GI disorders in pigs. This review will focus on the development and functional properties of the GI barrier in pigs and how common early life production stressors, such as weaning, can alter immediate and long-term barrier function and disease susceptibility. Specific stress-related pathophysiological mechanisms responsible for driving GI barrier dysfunction induced by weaning and the implications to animal health and performance will be discussed.

Influence of PEDOT:PSS on the effectiveness of barrier layers prepared by atomic layer deposition in organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Wegler, Barbara, E-mail: barbara.wegler@siemens.com [Siemens AG, Corporate Technology, Guenther-Scharowsky-Strasse 1, 91058 Erlangen, Germany and Center for Medical Physics and Engineering, University of Erlangen-Nuremberg, Henkestrasse 91, 91052 Erlangen (Germany); Schmidt, Oliver [Siemens AG, Corporate Technology, Guenther-Scharowsky-Strasse 1, 91058 Erlangen (Germany); Hensel, Bernhard [Center for Medical Physics and Engineering, University of Erlangen-Nuremberg, Henkestrasse 91, 91052 Erlangen (Germany)

2015-01-15

Organic light emitting diodes (OLEDs) are well suited for energy saving lighting applications, especially when thinking about highly flexible and large area devices. In order to avoid the degradation of the organic components by water and oxygen, OLEDs need to be encapsulated, e.g., by a thin sheet of glass. As the device is then no longer flexible, alternative coatings are required. Atomic layer deposition (ALD) is a very promising approach in this respect. The authors studied OLEDs that were encapsulated by 100 nm Al{sub 2}O{sub 3} deposited by ALD. The authors show that this coating effectively protects the active surface area of the OLEDs from humidity. However, secondary degradation processes still occur at sharp edges of the OLED stack where the extremely thin encapsulation layer does not provide perfect coverage. Particularly, the swelling of poly(3,4-ethylenedioxythiophene) mixed with poly(styrenesulfonate), which is a popular choice for the planarization of the bottom electrode and at the same time acts as a hole injection layer, affects the effectiveness of the encapsulation layer.

Improving photoelectrochemical performance on quantum dots co-sensitized TiO_2 nanotube arrays using ZnO energy barrier by atomic layer deposition

International Nuclear Information System (INIS)

Zeng, Min; Zeng, Xi; Peng, Xiange; Zhu, Zhuo; Liao, Jianjun; Liu, Kai; Wang, Guizhen; Lin, Shiwei

2016-01-01

Graphical abstract: - Highlights: • The length of TNTAs has a balance between the charge recombination and the QDs loading. • The introduction of ZnO interlayer by ALD could improve the QDs absorption. • The optimal thickness of ZnO interlayer is 1.5 nm prepared by 10 cycles ALD. - Abstract: PbS and CdS quantum dots (QDs) have been deposited onto TiO_2 nanotube arrays (TNTAs) in turn via a sonication-assisted successive ionic layer adsorption and reaction method. This method could uniformly decorate TNTAs with QDs, avoiding QDs aggregation at the mouth of TiO_2 nanotube. The loading amounts of QDs on TNTAs could be controlled by adjusting the TNTAs length. Under one sun illumination, the QDs co-sensitized TNTAs (TNTAs/QDs) with the length of about 2.4 μm displayed the highest photocurrent of 4.32 mA cm"−"2, which is 27 times higher than that of the bare TNTAs. Introduction of a thin ZnO energy barrier by atomic layer deposition (ALD) between the TNTAs and QDs can further improve the photocurrent of TNTAs/QDs. And the TNTAs/QDs with 10 ALD cycles of ZnO interlayer exhibits the highest photocurrent of 5.24 mA cm"−"2 and best photoconversion efficiency of 4.9%, a more than 20% enhancement over the bare TNTAs/QDs. Such enhanced photoelectrochemical performance may be ascribed to the increased amounts of QDs on the TNTAs due to the introduction of ZnO interlayer. The benefits of ALD layers play a crucial role in development and optimization of high-performance photoelectrodes in the near future.

Improvement of barrier properties of rotomolded PE containers with nanoclay

Energy Technology Data Exchange (ETDEWEB)

Jamshidi, Shadi; Sundararaj, Uttandaraman, E-mail: u.sundararaj@ucalgary.ca [Department of Chemical and Petroleum Engineering, University of Calgary, Calgary, Alberta, T2N 1N4 (Canada)

2015-05-22

Polyethylene (PE) is widely used to make bulk containers in rotational molding process. The challenge in this study is to improve permeation resistance of PE to hydrocarbon solvents and gases. Adding organomodified clay improves the thermal, barrier and mechanical properties of PE. In fact, clay layers create a tortuous path against the permeant, yielding better barrier properties. Due to the non-polar hydrophobic nature of PE and polar hydrophilic structure of clay minerals, the compatibilizer plays a crucial role to enhance the dispersion level of clay in the matrix. In this study High Density Polyethylene (HDPE) and Linear Low Density Polyethylene (LLDPE) layered silicate nanocomposite were melt-compounded with two concentrations of organomodified clay (2 and 4 wt. %). The interaction between nanoclay, compatibilizer and rotomolding grade of PE were examined by using X-ray diffraction, transmission electron microscopy (TEM) and rheology test. Rheology was used to determine the performance of our material at low shear processing condition.

Microstructure of oxides in thermal barrier coatings grown under dry/humid atmosphere

International Nuclear Information System (INIS)

Zhou Zhaohui; Guo Hongbo; Wang Juan; Abbas, Musharaf; Gong Shengkai

2011-01-01

Graphical abstract: The presence of water vapor promoted the formation of spinels in the TBC. Highlights: → Thermal barrier coatings are produced by electron beam physical vapour deposition. → Oxidation behaviour of the coatings at 1100 deg. C has been investigated in dry/humid O 2 . → Thermally grown oxides formed in the coatings are characterized. → The presence of water vapour promotes the formation of spinel in the TBCs. - Abstract: The microstructure of thermally grown oxide (TGO) in thermal barrier coatings (TBCs) oxidized under dry/humid atmosphere at 1100 deg. C has been characterized by transmission electron microscopy. A thin and continuous oxide layer is formed in the as-deposited TBCs produced by electron beam physical vapor deposition. The TGO formed in dry atmosphere consists of an outer layer of fine α-alumina, zirconia grains and an inner layer of columnar α-alumina grains. However, a small amount of spinel is observed in the TGO under humid atmosphere. The presence of water vapour promotes the formation of spinel.

Deposition and characterization of plasma sprayed Ni-5A1/ magnesia stabilized zirconia based functionally graded thermal barrier coating

International Nuclear Information System (INIS)

Baig, M N; Khalid, F A

2014-01-01

Thermal barrier coatings (TBCs) are employed to protect hot section components in industrial and aerospace gas turbine engines. Conventional TBCs frequently fail due to high residual stresses and difference between coefficient of thermal expansion (CTE) of the substrate and coatings. Functionally graded thermal barrier coatings (FG-TBCs) with gradual variation in composition have been proposed to minimize the problem. In this work, a five layered functionally graded thermal barrier coating system was deposited by atmospheric plasma spray (APS) technique on Nimonic 90 substrates using Ni-5Al as bond coat (BC) and magnesia stabilized zirconia as top coat (TC). The coatings were characterized by SEM, EDS, XRD and optical profilometer. Microhardness and coefficient of thermal expansion of the five layers deposited as individual coatings were also measured. The deposited coating system was oxidized at 800°C. SEM analysis showed that five layers were successfully deposited by APS to produce a FG-TBC. The results also showed that roughness (Ra) of the individual layers decreased with an increase in TC content in the coatings. It was found that microhardness and CTE values gradually changed from bond coat to cermet layers to top coat. The oxidized coated sample revealed parabolic behavior and changes in the surface morphology and composition of coating

Unsaturated zone moisture and vapor movement induced by temperature variations in asphalt barrier field lysimeters

International Nuclear Information System (INIS)

Holford, D.J.; Fayer, M.J.

1990-08-01

Protective barriers are being considered for use at the Hanford Site to enhance the isolation of radioactive wastes from water, plant, and animal intrusion. Lysimeters were constructed to evaluate the performance of asphalt barrier formulations under natural environmental conditions. These lysimeters were constructed of 1.7-m lengths of PVC pipe that have a diameter of 30 cm. The lysimeters were filled with layers of gravel, coarse sand, and asphalt. The sand and gravel placed under the asphalt barrier were wet when installed. TOUGH was used to conduct simulations to assess the effect of temperature variations on moisture and vapor movement beneath the asphalt layer in field test lysimeters. All variables in TOUGH were converted to double precision so that simulations could be run on a Sun-4 UNIX workstation. A radially symmetric grid was used to simulate the lysimeter. 8 refs., 9 figs

Application of polycrystalline diffusion barriers

International Nuclear Information System (INIS)

Tsymbal, V.A.; Kolupaev, I.N.

2010-01-01

Degradation of contacts of the electronic equipment at the raised temperatures is connected with active diffusion redistribution of components contact - metalized systems (CMS) and phase production on interphase borders. One of systems diffusion barriers (DB) are polycrystalline silicide a film, in particular silicides of the titan. Reception disilicide the titan (TiSi 2 ) which on the parameters is demanded for conditions of microelectronics from known silicides of system Ti-Si, is possible as a result of direct reaction of a film of the titan and a substrate of silicon, and at sedimentation of layer Ti-Si demanded stoichiometric structure. Simultaneously there is specific problem polycrystalline diffusion a barrier (PDB): the polycrystalline provides structural balance and metastability film disilicide, but leaves in it borders of grains - easy local ways of diffusion. In clause the analysis diffusion permeability polycrystalline and polyphase DB is made and recommendations for practical methods of increase of blocking properties PDB are made.

On the conductive properties of MgO films grown on ultrathin hexagonal close-packed Co(0001) layer

International Nuclear Information System (INIS)

Gladczuk, L.; Aleszkiewicz, M.

2013-01-01

Here we present a scanning tunneling microscopy study of electrical conductivity of (110)-oriented MgO ultrathin films grown on hexagonal close-packed Co(0001) surface by molecular beam epitaxy, being a good candidate for tunneling barrier for future-generation spintronic devices. Three-dimensional growth of the tunneling barrier, expected for compressive strains emerging at the Co/MgO interface, is demonstrated by reflection high-energy electron diffraction and atomic force microscopy. The 5 eV height of the full barrier of MgO is reached at a layer thickness of 4 nm. Thinner MgO layers exhibit randomly distributed spots of the high conductance on the tunneling current map. The current–voltage curves indicate the existence of vacancies in MgO crystal lattice, lowering the resistivity of the tunneling barrier. - Highlights: • Conductivity of MgO barrier in MgO/hexagonal close-packed-Co bilayer • Conductivity strongly varies with MgO thickness • MgO barrier exhibits randomly distributed spots of particularly high conductance • Tunneling current–voltage curves indicate the existence of vacancies in MgO lattice

Adsorption and diffusion of lithium on layered silicon for Li-ion storage.

Science.gov (United States)

Tritsaris, Georgios A; Kaxiras, Efthimios; Meng, Sheng; Wang, Enge

2013-05-08

The energy density of Li-ion batteries depends critically on the specific charge capacity of the constituent electrodes. Silicene, the silicon analogue to graphene, being of atomic thickness could serve as high-capacity host of Li in Li-ion secondary batteries. In this work, we employ first-principles calculations to investigate the interaction of Li with Si in model electrodes of free-standing single-layer and double-layer silicene. More specifically, we identify strong binding sites for Li, calculate the energy barriers accompanying Li diffusion, and present our findings in the context of previous theoretical work related to Li-ion storage in other structural forms of silicon: the bulk and nanowires. The binding energy of Li is ~2.2 eV per Li atom and shows small variation with respect to Li content and silicene thickness (one or two layers) while the barriers for Li diffusion are relatively low, typically less than 0.6 eV. We use our theoretical findings to assess the suitability of two-dimensional silicon in the form of silicene layers for Li-ion storage.

Numerical evaluation of monofil and subtle-layered evapotranspiration (ET) landfill caps

International Nuclear Information System (INIS)

Wilson, G.V.; Henley, M.; Valceschini, R.

1998-01-01

The US Department of Energy/Nevada Operations Office (DOE/NV) has identified the need to design a low-level waste (LLW) closure cap for the arid conditions at the Nevada Test Site (NTS). As a result of concerns for subsidence impacting the cover, DOE/NV redesigned the LLW cover from one containing a 'hard' infiltration barrier that would likely fail, to a 'soft' (ET) cover that is sufficiently deep to accommodate the hydrologic problems of subsidence. An ET cover is one that does not contain hydrologic barrier layers but relies on soil-water retention and sufficient thickness to store water until evapotranspiration (ET) can remove the moisture. Subtle layering within an ET cap using the native soil could be environmentally beneficial and cost effective

Potential barrier heights at metal on oxygen-terminated diamond interfaces

Energy Technology Data Exchange (ETDEWEB)

Muret, P., E-mail: pierre.muret@neel.cnrs.fr; Traoré, A.; Maréchal, A.; Eon, D. [Inst. NEEL, Univ. Grenoble Alpes, F-38042 Grenoble, France and CNRS, Inst. NEEL, F-38042 Grenoble (France); Pernot, J. [Univ. Grenoble Alpes, Inst. NEEL, F-38042 Grenoble, (France); CNRS, Inst. NEEL, F-38042 Grenoble, (France); Institut Universitaire de France, 103 Boulevard Saint-Michel, F-75005 Paris (France); Pinero, J. C.; Villar, M. P.; Araujo, D., E-mail: daniel.araujo@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)

2015-11-28

Electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO{sub 2} deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprised of a stack of lightly p-doped diamond on a heavily doped layer itself homoepitaxially grown on an Ib substrate, are investigated experimentally and compared to different models. In Schottky barrier diodes, the interfacial oxide layer evidenced by high resolution transmission electron microscopy and electron energy losses spectroscopy before and after annealing, and barrier height inhomogeneities accounts for the measured electrical characteristics until flat bands are reached, in accordance with a model which generalizes that by Tung [Phys. Rev. B 45, 13509 (1992)] and permits to extract physically meaningful parameters of the three kinds of interface: (a) unannealed ones, (b) annealed at 350 °C, (c) annealed at 450 °C with the characteristic barrier heights of 2.2–2.5 V in case (a) while as low as 0.96 V in case (c). Possible models of potential barriers for several metals deposited on well defined oxygen-terminated diamond surfaces are discussed and compared to experimental data. It is concluded that interface dipoles of several kinds present at these compound interfaces and their chemical evolution due to annealing are the suitable ingredients that are able to account for the Mott-Schottky behavior when the effect of the metal work function is ignored, and to justify the reverted slope observed regarding metal work function, in contrast to the trend always reported for all other metal-semiconductor interfaces.

Hanford Site protective isolation surface barrier: Taking research and development to engineered application

International Nuclear Information System (INIS)

Myers, D.R.; Wing, N.R.

1994-01-01

The development of the Protective Isolation Surface Barrier has been an ongoing program since 1985. This development effort has focused on several technical areas. These technical areas include water infiltration, biointrusion, human intrusion, erosion/deposition, physical stability, barrier materials, computer modeling, long-term climate effects, natural analogs, and barrier design. This paper briefly reviews the results of the research and development in the technical areas and then explains how the results of this work have influenced the design features of the prototype barrier. A good example of this is to explain how the type and depth of the soil layer used in the barrier is related to water infiltration, biointrusion, modeling, climate, analogs, and barrier materials. Another good example is to explain the relationship of the barrier sideslopes (basalt riprap and native soil) with human intrusion, biointrusion, barrier materials, and barrier design. In general, the design features of the prototype barrier will be explained in terms of the results of the testing and development program. After the basis for prototype barrier design has been established, the paper will close by reviewing the construction of the prototype barrier, sharing the lessons learned during construction, and explaining the ongoing testing and monitoring program which will determine the success or failure of this barrier concept and the need for additional design modifications

On the pH dependence of electrochemical proton transfer barriers

DEFF Research Database (Denmark)

Rossmeisl, Jan; Chan, Karen; Skulason, Egill

2016-01-01

The pH dependence of rate of the hydrogen evolution/oxidation reaction HER/HOR is investigated. Based on thermodynamic considerations, a possible explanation to the low exchange current for hydrogen reactions in alkaline is put forward. We propose this effect to be a consequence of the change...... environment in the double layer region. The entropic barrier can be rate determining only when the surface catalysis is fast. Therefore the effect of pH is most pronounced on good catalysts and for fast reactions. This entropic barrier is also in a good agreement with the unusually low prefactor measured...

Numerical investigation of dielectric barrier discharges

Science.gov (United States)

Li, Jing

1997-12-01

A dielectric barrier discharge (DBD) is a transient discharge occurring between two electrodes in coaxial or planar arrangements separated by one or two layers of dielectric material. The charge accumulated on the dielectric barrier generates a field in a direction opposite to the applied field. The discharge is quenched before an arc is formed. It is one of the few non-thermal discharges that operates at atmospheric pressure and has the potential for use in pollution control. In this work, a numerical model of the dielectric barrier discharge is developed, along with the numerical approach. Adaptive grids based on the charge distribution is used. A self-consistent method is used to solve for the electric field and charge densities. The Successive Overrelaxation (SOR) method in a non-uniform grid spacing is used to solve the Poisson's equation in the cylindrically-symmetric coordinate. The Flux Corrected Transport (FCT) method is modified to solve the continuity equations in the non-uniform grid spacing. Parametric studies of dielectric barrier discharges are conducted. General characteristics of dielectric barrier discharges in both anode-directed and cathode-directed streamer are studied. Effects of the dielectric capacitance, the applied field, the resistance in external circuit and the type of gases (O2, air, N2) are investigated. We conclude that the SOR method in an adaptive grid spacing for the solution of the Poisson's equation in the cylindrically-symmetric coordinate is convergent and effective. The dielectric capacitance has little effect on the g-factor of radical production, but it determines the strength of the dielectric barrier discharge. The applied field and the type of gases used have a significant role on the current peak, current pulse duration and radical generation efficiency, discharge strength, and microstreamer radius, whereas the external series resistance has very little effect on the streamer properties. The results are helpful in

Why testes are resistant to hydatidosis: Is blood-testis-barrier ...

African Journals Online (AJOL)

There was demonstrable hydatid cyst (protoscoleces and germinative layer) in testes of five rabbits from Group A, but in one rabbit, both testes were normal. In Group B, three out of four rabbits developed peritoneal hydatidosis. The mechanism of testicular resistance to echinococcosis could be due to blood-testis barrier ...

Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

Science.gov (United States)

Chang, Y. Austin; Yang, Jianhua Joshua

2008-11-11

This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

Evaluation of Defects of Thermal Barrier Coatings by Thermal Shock Test Using Eddy Current Testing

Energy Technology Data Exchange (ETDEWEB)

Heo, Tae Hoon; Cho, Youn Ho; Lee, Joon Hyun [Pusan National University, Busan (Korea, Republic of); Oh, Jeong Seok; Lee, Koo Hyun [KIMM, Daejeon (Korea, Republic of)

2009-10-15

Periodical thermal shock can introduce defects in thermal barrier coating made by layers of CoNiCrAlY bond coating(BC) and ZrO{sub 2}-8wt%Y{sub 2}O{sub 3} ceramic top coating(TC) on Inconel-738 substrate using plasma spraying. Thermal shock test is performed by severe condition that is to heat until 1000 .deg. C and cool until 20 .deg. C. As the number of cycle is increased, the fatigue by thermal shock is also increased. After test, the micro-structures and mechanical characteristics of thermal barrier coating were investigated by SEM, XRD. The TGO layer of is Al{sub 2}O{sub 3} formed between BC and TC by periodical thermal shock test, and its change in thickness is inspected by eddy current test(ECT). By ECT test, it is shown that TGO and micro-crack can be detected and it is possible to predict the life of thermal barrier coating

Conduction mechanisms in thin atomic layer deposited Al2O3 layers

International Nuclear Information System (INIS)

Spahr, Holger; Montzka, Sebastian; Reinker, Johannes; Hirschberg, Felix; Kowalsky, Wolfgang; Johannes, Hans-Hermann

2013-01-01

Thin Al 2 O 3 layers of 2–135 nm thickness deposited by thermal atomic layer deposition at 80 °C were characterized regarding the current limiting mechanisms by increasing voltage ramp stress. By analyzing the j(U)-characteristics regarding ohmic injection, space charge limited current (SCLC), Schottky-emission, Fowler-Nordheim-tunneling, and Poole-Frenkel-emission, the limiting mechanisms were identified. This was performed by rearranging and plotting the data in a linear scale, such as Schottky-plot, Poole-Frenkel-plot, and Fowler-Nordheim-plot. Linear regression then was applied to the data to extract the values of relative permittivity from Schottky-plot slope and Poole-Frenkel-plot slope. From Fowler-Nordheim-plot slope, the Fowler-Nordheim-energy-barrier was extracted. Example measurements in addition to a statistical overview of the results of all investigated samples are provided. Linear regression was applied to the region of the data that matches the realistic values most. It is concluded that ohmic injection and therefore SCLC only occurs at thicknesses below 12 nm and that the Poole-Frenkel-effect is no significant current limiting process. The extracted Fowler-Nordheim-barriers vary in the range of up to approximately 4 eV but do not show a specific trend. It is discussed whether the negative slope in the Fowler-Nordheim-plot could in some cases be a misinterpreted trap filled limit in the case of space charge limited current

Construction and operational experiences of engineered barrier test facility for near surface disposal of LILW

International Nuclear Information System (INIS)

Park, Jin Beak; Park, Se Moon; Kim, Chang Lak

2003-01-01

Engineered barrier test facility is specially designed to demonstrate the performance of engineered barrier system for the near-surface disposal facility under the domestic environmental conditions. Comprehensive measurement systems are installed within each test cell. Long-and short-term monitoring of the multi-layered cover system can be implemented according to different rainfall scenarios with artificial rainfall system. Monitoring data on the water content, temperature, matric potential, lateral drainage and percolation of cover-layer system can be systematically managed by automatic data acquisition system. The periodic measurement data are collected and will be analyzed by a dedicated database management system, and provide a basis for performance verification of the disposal cover design

Quantum dots transparent display (QDs-TPD) using a liquid QDs layer and N2 barrier discharge

Science.gov (United States)

Kim, Hong Tak; Lee, Sung-Youp; Sohn, Sang Ho

2017-07-01

Quantum dots transparent display (QDs-TPD) was realized using a liquid QDs layer and N2 barrier discharge panel. In the N2 discharge, the 2nd+ lines of N2 in the range of 300 - 400 nm (C3Πu - B3Πg), and the 1st- lines of N2+ at 391.4 and 427.8 nm (B2Σu+ - X2 Σg+) were mainly observed, while the visible emission lines were rarely observed. This implies the N2 discharge is suitable for the excitation source of the QDs, due to the strong ultra-violet radiations and the weak visible emissions. The emission centers for red, green, and blue color in QDs-TPD were positioned at 452, 540, and 638 nm, respectively, and the N2 emission peaks were seldom observed in the visible region. The transmittance of QDs-TPD was approximately 40% in the visible region and the luminescence was about 70 cd/m2. The CIE (x, y) coordinates of red, green, and blue colors were (0.670, 0.309), (0.378, 0.640), and (0.183, 0.118), respectively, and the color gamut was 71% of a NTSC standard. Thus, the QDs-TPD is expected as a way for realizing the TPD, due to its good transparency, excellent visibility, wide viewing-angle, aesthetical design, low cost production, and good scalability to large sizes.

Influence of deposition conditions on the microstructure of Al-based coatings for applications as corrosion and anti-permeation barrier

Energy Technology Data Exchange (ETDEWEB)

Wulf, Sven-Erik, E-mail: sven-erik.wulf@kit.edu; Holstein, Nils; Krauss, Wolfgang; Konys, Jürgen

2013-10-15

Highlights: • Electrochemical Al deposition is industrially relevant for barrier formation. • Al coatings have to be converted into protective layers by heat treatments. • Morphology of Al coatings made by ECX process depends on deposition parameters. • Heat treatment behavior depends on the morphology of the coating produced by ECX. • ECX is proven to produce layer sequences on Eurofer similar to HDA and ECA process. -- Abstract: Previous research revealed that the application of aluminum-based barriers is suitable to minimize corrosion rates of Eurofer steel in Pb–15.7Li and tritium-permeation from the liquid breeder into the cooling system (HCLL) in an envisaged future fusion reactor. Besides the former developed hot-dip-aluminization process (HDA), electrodeposition techniques based on water-free electrolytes, such as toluene-based electrolytes (ECA) and ionic liquids (ECX), showed promising results for the production of suitable aluminum layers. These processes allow electrodeposition of Al-layers on Eurofer steel with adjustable layer thicknesses, but a heat treatment procedure is needed afterwards to form the desired Fe–Al/Alumina scale. To investigate the deposition and treatment process in more detail, a new series of aluminum electroplating was performed by using the ECX process. The variation of deposition parameters (direct and pulsed current) showed clear impact on the morphology of deposited Al-layers. Heat treatments revealed that the formation of Fe–Al barriers is significantly influenced by the morphology of deposits, beyond other parameters like layer thickness. Presented metallographic and SEM/EDX analyses underline the occurred dependencies between deposition conditions and morphology and on the other hand Al-layer morphology and heat treatment behavior.

Methods to improve the PVD coatability of brass by using diffusion barriers

Science.gov (United States)

Langer, Bernd

Previous work involving PVD coatings on brass has used a combination of multilayers consisting of electroplated films like nickel or chromium and deposited decorative PVD coatings like TiN, TiAIN or ZrN systems. The disadvantages of these systems are the combination of wet electrochemistry and high tech vacuum processes. Furthermore the allergic reaction to nickel and the toxic nature of Cr(VI) must be considered.There is a need for intermediate layers to 'seal-off the brass in order to avoid the evaporation of zinc in vacuum using a diffusion barrier. Furthermore the intermediate layers are required to act as a corrosion barrier.This thesis reports on the development of PVD coatings on heat sensitive brass substrate materials utilising ABS technology with Al, CuAl8 and Nb targets as vapour sources.The brass pretreatment includes careful grinding, polishing and cleaning steps as well as steered arc metal ion etching using the above target materials. The coatings are produced at temperatures between 100 and 250°C in the unbalanced magnetron mode, including layers made from Al, Al-Nb, CuA18, CuAl8-Nb and Nb.Scratch adhesion and Rockwell indentation tests are found not to be directly applicable to the system of soft brass and ductile coating(s). Therefore a new classification for both scratch and indentation tests was defined. The best adhesion was shown by the CuA18 coatings on brass. Corrosion tests showed good results for the Al coatings and poor results for the pure Nb coatings directly applied on brass. The best corrosion result was obtained with a CuAl8-Nb layer system. This layer system also offers very good barrier behaviour concerning Zn diffusion.Other investigations like Glow Discharge Optical Emission Spectroscopy (GDOES), Scanning Electron Microscopy (SEM) imaging, Transmission Electron Microscopy (TEM) and X-ray Diffraction (XRD) were undertaken to characterise the new coating systems for brass.

Structural stability of diffusion barriers in thermoelectric SbTe: From first-principles calculations to experimental results

International Nuclear Information System (INIS)

Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; Chiou, Shan-Haw; Huang, Chiung-Hui; Liu, Chia-Mei; Lin, Yu-Li; Chao, Wen-Hsuan; Yang, Ping-Hsing; Chang, Chun-Yen; Cheng, Chin-Pao

2014-01-01

Highlights: • The diffusion behavior was originated from high-vapor-pressure Te atom. • Te out-diffusion is main driving force to cause inter-diffusion effect. • Mid-band Ta and TaN with favored ohmic-like contact showed small diffusion tail. • Strong Ta-N bonding and high total energy suppressed interfacial layer formation. -- Abstract: This study involved developing robust diffusion barrier for n-type antimony telluride (SbTe) thermoelectric devices. Compared to conventional Ni barrier, the mid-band metals of Ta and TaN with favored ohmic-like contact exhibited smaller diffusion tail because of structurally stable interface on SbTe, which have been supported by first-principles calculations and demonstrated by experimental results. Furthermore, the TaN barrier has strong ionic Ta–N bonding and a high total energy of −4.7 eV/atom that could effectively suppress the formation of SbTe-compounds interfacial layer

The effects of interfacial recombination and injection barrier on the electrical characteristics of perovskite solar cells

Directory of Open Access Journals (Sweden)

Lin Xing Shi

2018-02-01

Full Text Available Charge carrier recombination in the perovskite solar cells (PSCs has a deep influence on the electrical performance, such as open circuit voltage, short circuit current, fill factor and ultimately power conversion efficiency. The impacts of injection barrier, recombination channels, doping properties of carrier transport layers and light intensity on the performance of PSCs are theoretically investigated by drift-diffusion model in this work. The results indicate that due to the injection barrier at the interfaces of perovskite and carrier transport layer, the accumulated carriers modify the electric field distribution throughout the PSCs. Thus, a zero electric field is generated at a specific applied voltage, with greatly increases the interfacial recombination, resulting in a local kink of current density-voltage (J-V curve. This work provides an effective strategy to improve the efficiency of PSCs by pertinently reducing both the injection barrier and interfacial recombination.

Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.

Science.gov (United States)

Luo, Dongxiang; Xu, Hua; Zhao, Mingjie; Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

2015-02-18

Amorphous indium-gallium-zinc-oxide thin film transistors (α-IGZO TFTs) with damage-free back channel wet-etch (BCE) process were achieved by introducing a carbon nanofilm as a barrier layer. We investigate the effects of different source-and-drain (S/D) materials on TFT performance. We find the TFT with Ti/C S/D electrodes exhibits a superior performance with higher output current, lower threshold voltage, and higher effective electron mobility compared to that of Mo/C S/D electrodes. Transmittance electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) are employed to analysis the interfacial interaction between S/D metal/C/α-IGZO layers. The results indicate that the better performance of TFTs with Ti/C electrodes should be attributed to the formations of Ti-C and Ti-O at the Ti/C-contact regions, which lead to a lower contact resistance, whereas Mo film is relatively stable and does not react easily with C nanofilm, resulting in a nonohmic contact behavior between Mo/C and α-IGZO layer. However, both kinds of α-IGZO TFTs show good stability under thermal bias stress, indicating that the inserted C nanofilms could avoid the impact on the α-IGZO channel regions during S/D electrodes formation. Finally, we successfully fabricated a high-definition active-matrix organic lighting emitting diode prototype driven by α-IGZO TFTs with Ti/C electrodes in a pilot line.

Field Soil Water Retention of the Prototype Hanford Barrier and Its Variability with Space and Time

Energy Technology Data Exchange (ETDEWEB)

Zhang, Z. F.

2015-08-14

Engineered surface barriers are used to isolate underlying contaminants from water, plants, animals, and humans. To understand the flow processes within a barrier and the barrier’s ability to store and release water, the field hydraulic properties of the barrier need to be known. In situ measurement of soil hydraulic properties and their variation over time is challenging because most measurement methods are destructive. A multiyear test of the Prototype Hanford Barrier (PHB) has yielded in situ soil water content and pressure data for a nine-year period. The upper 2 m layer of the PHB is a silt loam. Within this layer, water content and water pressure were monitored at multiple depths at 12 water balance stations using a neutron probe and heat dissipation units. Valid monitoring data from 1995 to 2003 for 4 depths at 12 monitoring stations were used to determine the field water retention of the silt loam layer. The data covered a wide range of wetness, from near saturation to the permanent wilt point, and each retention curve contained 51 to 96 data points. The data were described well with the commonly used van Genuchten water retention model. It was found that the spatial variation of the saturated and residual water content and the pore size distribution parameter were relatively small, while that of the van Genuchten alpha was relatively large. The effects of spatial variability of the retention properties appeared to be larger than the combined effects of added 15% w/w pea gravel and plant roots on the properties. Neither of the primary hydrological processes nor time had a detectible effect on the water retention of the silt loam barrier.

Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

Science.gov (United States)

Chien, Diana; Li, Xiang; Wong, Kin; Zurbuchen, Mark A.; Robbennolt, Shauna; Yu, Guoqiang; Tolbert, Sarah; Kioussis, Nicholas; Khalili Amiri, Pedram; Wang, Kang L.; Chang, Jane P.

2016-03-01

Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is ˜40% higher (19.8 ± 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 ± 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltage-controlled, ultralow-power, and high-density magnetic random access memory devices.

Atomic layer deposition for photovoltaics: applications and prospects for solar cell manufacturing

International Nuclear Information System (INIS)

Van Delft, J A; Garcia-Alonso, D; Kessels, W M M

2012-01-01

Atomic layer deposition (ALD) is a vapour-phase deposition technique capable of depositing high quality, uniform and conformal thin films at relatively low temperatures. These outstanding properties can be employed to face processing challenges for various types of next-generation solar cells; hence, ALD for photovoltaics (PV) has attracted great interest in academic and industrial research in recent years. In this review, the recent progress of ALD layers applied to various solar cell concepts and their future prospects are discussed. Crystalline silicon (c-Si), copper indium gallium selenide (CIGS) and dye-sensitized solar cells (DSSCs) benefit from the application of ALD surface passivation layers, buffer layers and barrier layers, respectively. ALD films are also excellent moisture permeation barriers that have been successfully used to encapsulate flexible CIGS and organic photovoltaic (OPV) cells. Furthermore, some emerging applications of the ALD method in solar cell research are reviewed. The potential of ALD for solar cells manufacturing is discussed, and the current status of high-throughput ALD equipment development is presented. ALD is on the verge of being introduced in the PV industry and it is expected that it will be part of the standard solar cell manufacturing equipment in the near future. (paper)

Vocal Fold Epithelial Barrier in Health and Injury: A Research Review

Science.gov (United States)

Levendoski, Elizabeth Erickson; Leydon, Ciara; Thibeault, Susan L.

2014-01-01

Purpose: Vocal fold epithelium is composed of layers of individual epithelial cells joined by junctional complexes constituting a unique interface with the external environment. This barrier provides structural stability to the vocal folds and protects underlying connective tissue from injury while being nearly continuously exposed to potentially…

Improving photoelectrochemical performance on quantum dots co-sensitized TiO{sub 2} nanotube arrays using ZnO energy barrier by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Zeng, Min [Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, College of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China); Zeng, Xi [College of Chemistry and Chemical Engineering, Yunnan Normal University, Kunming, 650500 (China); Peng, Xiange; Zhu, Zhuo; Liao, Jianjun; Liu, Kai; Wang, Guizhen [Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, College of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China); Lin, Shiwei, E-mail: linsw@hainu.edu.cn [Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, College of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China)

2016-12-01

Graphical abstract: - Highlights: • The length of TNTAs has a balance between the charge recombination and the QDs loading. • The introduction of ZnO interlayer by ALD could improve the QDs absorption. • The optimal thickness of ZnO interlayer is 1.5 nm prepared by 10 cycles ALD. - Abstract: PbS and CdS quantum dots (QDs) have been deposited onto TiO{sub 2} nanotube arrays (TNTAs) in turn via a sonication-assisted successive ionic layer adsorption and reaction method. This method could uniformly decorate TNTAs with QDs, avoiding QDs aggregation at the mouth of TiO{sub 2} nanotube. The loading amounts of QDs on TNTAs could be controlled by adjusting the TNTAs length. Under one sun illumination, the QDs co-sensitized TNTAs (TNTAs/QDs) with the length of about 2.4 μm displayed the highest photocurrent of 4.32 mA cm{sup −2}, which is 27 times higher than that of the bare TNTAs. Introduction of a thin ZnO energy barrier by atomic layer deposition (ALD) between the TNTAs and QDs can further improve the photocurrent of TNTAs/QDs. And the TNTAs/QDs with 10 ALD cycles of ZnO interlayer exhibits the highest photocurrent of 5.24 mA cm{sup −2} and best photoconversion efficiency of 4.9%, a more than 20% enhancement over the bare TNTAs/QDs. Such enhanced photoelectrochemical performance may be ascribed to the increased amounts of QDs on the TNTAs due to the introduction of ZnO interlayer. The benefits of ALD layers play a crucial role in development and optimization of high-performance photoelectrodes in the near future.

Large-scale fabrication of linear low density polyethylene/layered double hydroxides composite films with enhanced heat retention, thermal, mechanical, optical and water vapor barrier properties

Energy Technology Data Exchange (ETDEWEB)

Xie, Jiazhuo; Zhang, Kun; Zhao, Qinghua [College of Chemistry and Material Science, Shandong Agricultural University, 61 Daizong Street, Tai' an 271018 (China); Wang, Qingguo, E-mail: wqgyyy@126.com [College of Food Science and Engineering, Shandong Agricultural University, 61 Daizong Street, Tai' an 271018 (China); Xu, Jing, E-mail: jiaxu@sdau.edu.cn [College of Chemistry and Material Science, Shandong Agricultural University, 61 Daizong Street, Tai' an 271018 (China)

2016-11-15

Novel LDH intercalated with organic aliphatic long-chain anion was large-scale synthesized innovatively by high-energy ball milling in one pot. The linear low density polyethylene (LLDPE)/layered double hydroxides (LDH) composite films with enhanced heat retention, thermal, mechanical, optical and water vapor barrier properties were fabricated by melt blending and blowing process. FT IR, XRD, SEM results show that LDH particles were dispersed uniformly in the LLDPE composite films. Particularly, LLDPE composite film with 1% LDH exhibited the optimal performance among all the composite films with a 60.36% enhancement in the water vapor barrier property and a 45.73 °C increase in the temperature of maximum mass loss rate compared with pure LLDPE film. Furthermore, the improved infrared absorbance (1180–914 cm{sup −1}) of LLDPE/LDH films revealed the significant enhancement of heat retention. Therefore, this study prompts the application of LLDPE/LDH films as agricultural films with superior heat retention. - Graphical abstract: The fabrication process of LLDPE/LDH composite films. - Highlights: • LDH with basal spacing of 4.07 nm was synthesized by high-energy ball milling. • LLDPE composite films with homogeneous LDH dispersion were fabricated. • The properties of LLDPE/LDH composite films were improved. • LLDPE/LDH composite films show superior heat retention property.

Large-scale fabrication of linear low density polyethylene/layered double hydroxides composite films with enhanced heat retention, thermal, mechanical, optical and water vapor barrier properties

International Nuclear Information System (INIS)

Xie, Jiazhuo; Zhang, Kun; Zhao, Qinghua; Wang, Qingguo; Xu, Jing

2016-01-01

Novel LDH intercalated with organic aliphatic long-chain anion was large-scale synthesized innovatively by high-energy ball milling in one pot. The linear low density polyethylene (LLDPE)/layered double hydroxides (LDH) composite films with enhanced heat retention, thermal, mechanical, optical and water vapor barrier properties were fabricated by melt blending and blowing process. FT IR, XRD, SEM results show that LDH particles were dispersed uniformly in the LLDPE composite films. Particularly, LLDPE composite film with 1% LDH exhibited the optimal performance among all the composite films with a 60.36% enhancement in the water vapor barrier property and a 45.73 °C increase in the temperature of maximum mass loss rate compared with pure LLDPE film. Furthermore, the improved infrared absorbance (1180–914 cm −1 ) of LLDPE/LDH films revealed the significant enhancement of heat retention. Therefore, this study prompts the application of LLDPE/LDH films as agricultural films with superior heat retention. - Graphical abstract: The fabrication process of LLDPE/LDH composite films. - Highlights: • LDH with basal spacing of 4.07 nm was synthesized by high-energy ball milling. • LLDPE composite films with homogeneous LDH dispersion were fabricated. • The properties of LLDPE/LDH composite films were improved. • LLDPE/LDH composite films show superior heat retention property.

Layer-by-layer assembly of thin organic films on PTFE activated by cold atmospheric plasma

Directory of Open Access Journals (Sweden)

Tóth András

2014-12-01

Full Text Available An air diffuse coplanar surface barrier discharge is used to activate the surface of polytetrafluoroethylene (PTFE samples, which are subsequently coated with polyvinylpyrrolidone (PVP and tannic acid (TAN single, bi- and multilayers, respectively, using the dip-coating method. The surfaces are characterized by X-ray Photoelectron Spectroscopy (XPS, Attenuated Total Reflection – Fourier Transform Infrared Spectroscopy (ATR-FTIR and Atomic Force Microscopy (AFM. The XPS measurements show that with plasma treatment the F/C atomic ratio in the PTFE surface decreases, due to the diminution of the concentration of CF2 moieties, and also oxygen incorporation through formation of new C–O, C=O and O=C–O bonds can be observed. In the case of coated samples, the new bonds indicated by XPS show the bonding between the organic layer and the surface, and thus the stability of layers, while the gradual decrease of the concentration of F atoms with the number of deposited layers proves the creation of PVP/TAN bi- and multi-layers. According to the ATR-FTIR spectra, in the case of PVP/TAN multilayer hydrogen bonding develops between the PVP and TAN, which assures the stability of the multilayer. The AFM lateral friction measurements show that the macromolecular layers homogeneously coat the plasma treated PTFE surface.

Chitosan-Sodium Phytate Films with a Strong Water Barrier and Antimicrobial Properties Produced via One-Step-Consecutive-Stripping and Layer-by-Layer-Casting Technologies.

Science.gov (United States)

Yang, Jie; Xiong, Liu; Li, Man; Sun, Qingjie

2018-06-20

The pursuit of sustainable functional materials requires the development of materials based on renewable resources and efficient fabrication methods. Here, we first fabricated chitosan-sodium phytate films via one-step-stripping and layer-by-layer-casting technologies. The proposed film-fabrication methods are general, facile, environmentally benign, cost-effective, and easy to scale up. The resultant one-step-stripped film was thin (9 ± 1 μm), soft, transparent, and strong, whereas the thickness of the layer-by-layer-cast film was 70 ± 3 μm. FTIR analysis of the films indicated the formation of interactions between the phosphoric groups in sodium phytate and the amino groups in chitosan. More importantly, the water-vapor-permeability values of the one-step-stripped and cast films were 4-5 orders of magnitude lower than chitosan films reported before. Layer-by-layer-cast films in particular exhibited high tensile strength (49.21 ± 1.12 MPa) and were more than three times stronger than other polyelectrolyte multilayer films. Both types of films remained stable in an acidic environment. Furthermore, the layer-by-layer-assembled films presented greater antimicrobial activity than the stripped films. The developed chitosan-sodium phytate films can enhance several biomedical and environmental applications, such as packaging, drug delivery, diagnostics, microfluidics, and biosensing.

Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.

Science.gov (United States)

Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

2016-12-01

For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

UV and plasma treatment of thin silver layers and glass surfaces

Energy Technology Data Exchange (ETDEWEB)

Hluschi, J.H. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Helmke, A. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Roth, P. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Boewer, R. [Interpane Glasbeschichtungsgesellschaft mbH and Co KG, Sohnreystr. 21, D-37697 Lauenfoerde (Germany); Herlitze, L. [Interpane Glasbeschichtungsgesellschaft mbH and Co KG, Sohnreystr. 21, D-37697 Lauenfoerde (Germany); Vioel, W. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany)]. E-mail: vioel@hawk-hhg.de

2006-11-10

Thin silver layers can be modified by treatment with UV radiation or a plasma discharge. UV treatment at a wavelength of {lambda}=308 -bar nm improves the layer properties, thus leading to an enhancement of the layers IR reflectivity. For the purpose of in situ-measurement the sheet resistance is recorded during the process. Due to the Hagen-Rubens-Relation [E. Hagen, H. Rubens, Ann. Phys. 11 (1903) 873]-bar the sheet resistance is linked to the IR reflectivity of thin metal-films. A pretreatment of uncoated glass using a dielectric barrier discharge activates and cleans its surface, thus leading to an increase in adhesion of thin layers.

UV and plasma treatment of thin silver layers and glass surfaces

International Nuclear Information System (INIS)

Hluschi, J.H.; Helmke, A.; Roth, P.; Boewer, R.; Herlitze, L.; Vioel, W.

2006-01-01

Thin silver layers can be modified by treatment with UV radiation or a plasma discharge. UV treatment at a wavelength of λ=308 -bar nm improves the layer properties, thus leading to an enhancement of the layers IR reflectivity. For the purpose of in situ-measurement the sheet resistance is recorded during the process. Due to the Hagen-Rubens-Relation [E. Hagen, H. Rubens, Ann. Phys. 11 (1903) 873]-bar the sheet resistance is linked to the IR reflectivity of thin metal-films. A pretreatment of uncoated glass using a dielectric barrier discharge activates and cleans its surface, thus leading to an increase in adhesion of thin layers

Characterization and evaluation of EB-PVD thermal barrier coatings by impedance spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Zhang Chunxia; Liu Fushun; Gong Shengkai; Xu Huibin [School of Materials Science and Engineering, Beihang Univ., Beijing, BJ (China)

2005-07-01

Two layer thermal barrier coatings (TBCs) were prepared by EB-PVD (electron beam-physical vapor deposition) at different substrate temperatures in the range of 823 to 1123 K, and their microstructure was investigated with SEM and AC impedance as a function of substrate temperature and thermal cycling time. YSZ layer of all TBCs samples is in column structure, but the grain size and growth orientation are different with substrate. In this research, impedance spectra (IS) was measured as a function of thermal cycling between 1323 K and 298 K for these thermal barrier coatings. Grain boundary and bulk can be distinguished from analysis of AC impedance spectroa to provide information about the relation between microstructure and electric properties. The change in IS until failure was found to be related with the thickness, microcracks and macrocracks of TGO and the change in the interfacial of TGO/YSZ. (orig.)

Effect of a gap opening on the conductance of graphene with magnetic barrier structures

Science.gov (United States)

Esmailpour, Mohammad

2018-04-01

In the present study Klein tunneling in a single-layer gapped graphene was investigated by transfer matrix method under normal magnetic field for one and two magnetic barriers. Calculations show that electron transmission through a magnetic barrier is deflected to positive angles and reduces as the magnitude of magnetic field and especially the energy gap increases. This reduction is even more significant in larger fields so that after reaching a specific value of energy gap, an effective confinement for fermions and suppression of Klein tunneling is reached particularly in normal incidence and the conductance becomes zero. Unlike one barrier, the process of tunneling through two magnetic barriers induces symmetric transmission probability versus the incident angle; even, for lower energy gaps, electron transmission probability increases which in turn reduces total conductance via proper changes in the value of the magnetic field and energy gap. In general, it is concluded that confining electrons in asymmetric transmission through one barrier is conducted better than two barriers.

Geochemical barriers formed during in-situ leaching in ore-bearing horizons of hydrogenic uranium deposit

International Nuclear Information System (INIS)

Solodov, E.N.

1994-01-01

The behaviour of major metallogenetic element and associated elements on the boundary of the leaching solution transiting to the unchanged natural water in a layered uranium deposit of infiltration origin is studied. Neutralization geochemical barrier and their relevant secondary barriers-degassing barrier and neutralization barrier are defined, and recent accumulation of uranium, rare earth elements and a series of other elements at these barriers are in progress. The action of underground microorganism during this process is pointed out; the neutralization capacity of the ore-hosting terrigenous rocks is determined and the dimension of the matter removal, migration and reprecipitation in the studied system is evaluated. The principal conclusion is that the studied geological media have sufficient protective nature to resist direct and strong leaching action of the solution

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

Science.gov (United States)

Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

2012-11-07

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

In-situ fabrication of MoSi{sub 2}/SiC–Mo{sub 2}C gradient anti-oxidation coating on Mo substrate and the crucial effect of Mo{sub 2}C barrier layer at high temperature

Energy Technology Data Exchange (ETDEWEB)

Liu, Jun [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); State Key Laboratory of New Ceramics and Fine Processing, Beijing 100084 (China); Gong, Qianming, E-mail: gongqianming@mail.tsinghua.edu.cn [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); State Key Laboratory of New Ceramics and Fine Processing, Beijing 100084 (China); Shao, Yang; Zhuang, Daming [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); State Key Laboratory of New Ceramics and Fine Processing, Beijing 100084 (China); Liang, Ji [Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); Department of Mechanical Engineering, Tsinghua University, Beijing 100084 (China)

2014-07-01

MoSi{sub 2}/SiC–Mo{sub 2}C gradient coating on molybdenum was in situ prepared with pack cementation process by two steps: (1) carburizing with graphite powder to obtain a Mo{sub 2}C layer on Mo substrate, and (2) siliconizing with Si powder to get a composite MoSi{sub 2}/SiC layer on the upper part of Mo{sub 2}C layer. The microstructure and elemental distribution in the coating were investigated with scanning electron microscopy (SEM), backscattered electron (BSE), energy dispersive spectroscopy (EDS), electron probe microanalysis (EPMA) and X-ray diffraction (XRD). Cyclic oxidation tests (at 500 °C, 1200 °C, 1400 °C and 1600 °C) demonstrated excellent oxidation resistance for the gradient composite coating and the mass loss was only 0.23% in 60 min at 1600 °C. XRD, EPMA, thermal dynamic and phase diagram analyses indicated that the Mo{sub 2}C barrier layer played the key role in slowing down the diffusion of C and Si toward inner Mo substrate at high temperature and principally this contributed to the excellent anti-oxidation for Mo besides the outer MoSi{sub 2}/SiC composite layer.

Low-leakage superconducting tunnel junctions with a single-crystal Al{sub 2}O{sub 3} barrier

Energy Technology Data Exchange (ETDEWEB)

Oh, S [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Department of Physics, University of Illinois, Urbana, IL 61801 (United States); Cicak, K; Osborn, K D; Simmonds, R W; Pappas, D P [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, R; Cooper, K B; Steffen, M; Martinis, J M [University of California, Santa Barbara, CA 93106 (United States)

2005-10-01

We have developed a two-step growth scheme for single-crystal Al{sub 2}O{sub 3} tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al{sub 2}O{sub 3} layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al{sub 2}O{sub 3} junction may open a new venue for coherent quantum devices.

Overcoming multiple gastrointestinal barriers by bilayer modified hollow mesoporous silica nanocarriers.

Science.gov (United States)

Wang, Ying; Zhao, Yating; Cui, Yu; Zhao, Qinfu; Zhang, Qiang; Musetti, Sara; Kinghorn, Karina A; Wang, Siling

2018-01-01

Oral administration of nanocarriers remains a significant challenge in the pharmaceutical sciences. The nanocarriers must efficiently overcome multiple gastrointestinal barriers including the harsh gastrointestinal environment, the mucosal layer, and the epithelium. Neutral hydrophilic surfaces are reportedly necessary for mucus permeation, but hydrophobic and cationic surfaces are important for efficient epithelial absorption. To accommodate these conflicting surface property requirements, we developed a strategy to modify nanocarrier surfaces with cationic cell-penetrating peptides (CPP) concealed by a hydrophilic succinylated casein (SCN) layer. SCN is a mucus-inert natural material specifically degraded in the intestine, thus protecting nanocarriers from the harsh gastric environment, facilitating their mucus permeation, and inducing exposure of CPPs after degradation for further effective transepithelial transport. Quantum dots doped hollow silica nanoparticles (HSQN) with a diameter around 180 nm was used as the nanocarrier and demonstrated as high as 50% loading efficacy of paclitaxel, a model drug with poor solubility and permeability. The dual layer modification strategy prevented premature drug leakage in stomach and maintained high mucus permeation (the trajectory spanned 9-fold larger area than single CPP modification). After intestinal degradation of SCN by trypsin, these nanocarriers exhibited strong interaction with epithelial membranes and a 5-fold increase in cellular uptake. Significant transepithelial transport and intestinal distribution were also observed for this dual-modified formulation. A pharmacokinetics study on the paclitaxel-loaded nanocarrier found 40% absolute bioavailability and 7.8-fold higher AUC compared to oral Taxol®. Compared with single CPP modified nanocarriers, our formulation showed increased in vivo efficacy and tumor accumulation of the model drug with negligible intestinal toxicity. In summary, sequential modification

The development of surface barriers at the Hanford Site

International Nuclear Information System (INIS)

Wing, N.R.; Gee, G.W.

1994-03-01

Engineered barriers are being developed to isolate wastes disposed of near the earth's surface at the US Department of Energy's (DOE) Hanford Site near Richland, Washington. Much of the waste that would be disposed of by in-place stabilization currently is located in relatively shallow subsurface structures such as solid waste burial grounds, tanks, vaults, and cribs. Unless protected in some way, the wastes could be transported to the accessible environment via the following pathways: plant, animal, and human intrusion; water infiltration; erosion; and the exhalation of noxious gases. Permanent isolation surface barriers have been proposed to protect wastes disposed of ''in place'' from the transport pathways identified previously (Figure 1). The protective barrier consists of a variety of different materials (e.g., fine soil, sand, gravel, riprap, asphalt, etc.) placed in layers to form an above-grade mound directly over the waste zone. Surface markers are being considered for placement around the periphery of the waste sites to inform future generations of the nature and hazards of the buried wastes. In addition, throughout the protective barrier, subsurface markers could be placed to warn any inadvertent human intruders of the dangers of the buried wastes (Figure 2)

Stable self-compliance resistive switching in AlOδ/Ta2O5−x/TaOy triple layer devices

International Nuclear Information System (INIS)

Wu, Huaqiang; Li, Xinyi; Huang, Feiyang; Yu, Zhiping; Qian, He; Chen, An

2015-01-01

Stable self-compliance property was observed in the AlO δ /Ta 2 O 5−x /TaO y triple-layer resistive random access memory structure. The impact of AlO δ barrier layer was studied with different thicknesses. Endurance of more than 10 10 cycles and data retention for more than 3 h at 125 °C were demonstrated. All the measurements were carried out without external current compliance and no hard breakdown was observed. Systematic analysis reveals the self-compliance property is due to the built-in series resistance of the thin AlO δ barrier layer. A model is proposed to explain this self-compliance property. (paper)

Reactive Fe(II) layers in deep-sea sediments

Science.gov (United States)

König, Iris; Haeckel, Matthias; Drodt, Matthias; Suess, Erwin; Trautwein, Alfred X.

1999-05-01

The percentage of the structural Fe(II) in clay minerals that is readily oxidized to Fe(III) upon contact with atmospheric oxygen was determined across the downcore tan-green color change in Peru Basin sediments. This latent fraction of reactive Fe(II) was only found in the green strata, where it proved to be large enough to constitute a deep reaction layer with respect to the pore water O 2 and NO 3-. Large variations were detected in the proportion of the reactive Fe(II) concentration to the organic matter content along core profiles. Hence, the commonly observed tan-green color change in marine sediments marks the top of a reactive Fe(II) layer, which may represent the major barrier to the movement of oxidation fronts in pelagic subsurface sediments. This is also demonstrated by numerical model simulations. The findings imply that geochemical barriers to pore water oxidation fronts form diagenetically in the sea floor wherever the stage of iron reduction is reached, provided that the sediments contain a significant amount of structural iron in clay minerals.

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

Science.gov (United States)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

International Nuclear Information System (INIS)

Fan, W.; Kabius, B.; Hiller, J.M.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

2003-01-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 deg. C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlO x , while the oxide layer at the TiAl/Cu interface is an Al 2 O 3 -rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlO x interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 deg. C followed by a rapid thermal annealing at 700 deg. C. This process significantly reduced the thickness of the TiAlO x layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece)

2014-09-15

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

International Nuclear Information System (INIS)

Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

2014-01-01

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10 12 to 2.1 × 10 13 cm −2 as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10 13 cm −2 on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm 2 /Vs for a density of 1.3 × 10 13 cm −2 . The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

Barrier Coatings for Refractory Metals and Superalloys

Energy Technology Data Exchange (ETDEWEB)

SM Sabol; BT Randall; JD Edington; CJ Larkin; BJ Close

2006-02-23

In the closed working fluid loop of the proposed Prometheus space nuclear power plant (SNPP), there is the potential for reaction of core and plant structural materials with gas phase impurities and gas phase transport of interstitial elements between superalloy and refractory metal alloy components during service. Primary concerns are surface oxidation, interstitial embrittlement of refractory metals and decarburization of superalloys. In parallel with kinetic investigations, this letter evaluates the ability of potential coatings to prevent or impede communication between reactor and plant components. Key coating requirements are identified and current technology coating materials are reviewed relative to these requirements. Candidate coatings are identified for future evaluation based on current knowledge of design parameters and anticipated environment. Coatings were identified for superalloys and refractory metals to provide diffusion barriers to interstitial transport and act as reactive barriers to potential oxidation. Due to their high stability at low oxygen potential, alumina formers are most promising for oxidation protection given the anticipated coolant gas chemistry. A sublayer of iridium is recommended to provide inherent diffusion resistance to interstitials. Based on specific base metal selection, a thin film substrate--coating interdiffusion barrier layer may be necessary to meet mission life.

Barrier Coatings for Refractory Metals and Superalloys