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Sample records for bandgap fiber devices

  1. Liquid Crystal photonic Bandgap Fiber Devices

    DEFF Research Database (Denmark)

    Wei, Lei

    In this Ph.D. thesis, an experimental investigation of liquid crystal photonic bandgap (LCPBG) fiber devices and applications is presented. Photonic crystal fibers (PCFs) consist of a cladding microstructure with periodic index variations and a core defined by a defect of the structure....... The presence of liquid crystals (LCs) in the air-holes of the PCF transforms the fiber from a total internal reflection (TIR) guiding type into a photonic bandgap (PBG) guiding type. The light is confined to the silica core by coherent scattering from the LC-filled air-holes and the transmission spectrum...... of each LCPBG fiber. Finally, the applications for LCPBG fiber devices based on the on-chip platform design have been demonstrated in realizing microwave true-time delay and creating an electrically tunable fiber laser. Referatet mailes...

  2. Electrically tunable Yb-doped fiber laser based on a liquid crystal photonic bandgap fiber device

    DEFF Research Database (Denmark)

    Olausson, Christina Bjarnal Thulin; Scolari, Lara; Wei, Lei;

    2010-01-01

    We demonstrate electrical tunability of a fiber laser using a liquid crystal photonic bandgap fiber. Tuning of the laser is achieved by combining the wavelength filtering effect of a tunable liquid crystal photonic bandgap fiber device with an ytterbium-doped photonic crystal fiber. We fabricate ...

  3. Liquid Crystal Photonic bandgap Fibers: Modeling and Devices

    DEFF Research Database (Denmark)

    Weirich, Johannes

    In this PhD thesis an experimental and numerical investigation of liquid crystal infiltrated photonic bandgap fibers (LCPBGs) is presented. A simulation scheme for modeling LCPBG devices including electrical tunability is presented. New experimental techniques, boundary coating and the applicatio...

  4. On-chip tunable long-period grating devices based on liquid crystal photonic bandgap fibers

    DEFF Research Database (Denmark)

    Wei, Lei; Weirich, Johannes; Alkeskjold, Thomas Tanggaard;

    2009-01-01

    We design and fabricate an on-chip tunable long-period grating device by integrating a liquid crystal photonic bandgap fiber on silicon structures. The transmission axis of the device can be electrically rotated in steps of 45° as well as switched on and off with the response time in the millisec...

  5. A Dual-Function All-in-Fiber Device Based on Negative Dielectric Liquid Crystal Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Wei, Lei; Eskildsen, Lars; Weirich, Johannes;

    2008-01-01

    A dual-function all-in-fiber device based on negative dielectric liquid crystal photonic bandgap fibers is presented. This device can work both as an electrically tunable waveplate in the range 1520nm-1580nm, and as a polarimeter at 1310nm....

  6. Compact optically-fed microwave true-time delay using liquid crystal photonic bandgap fiber device

    DEFF Research Database (Denmark)

    Wei, Lei; Xue, Weiqi; Chen, Yaohui;

    2009-01-01

    Electrically tunable liquid crystal photonic bandgap fiber device based optically-fed microwave true-time delay is demonstrated. A maximum ~60° phase shift and an averaged ~7.2ps true time delay are obtained over the modulation frequency range 1GHz-19GHz.......Electrically tunable liquid crystal photonic bandgap fiber device based optically-fed microwave true-time delay is demonstrated. A maximum ~60° phase shift and an averaged ~7.2ps true time delay are obtained over the modulation frequency range 1GHz-19GHz....

  7. Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Barkou, Stig Eigil; Broeng, Jes; Bjarklev, Anders Overgaard

    1999-01-01

    Photonic bandgap fibers are describes using a new Kagomé cladding structure. These fibers may potentially guide light in low-index regions. Such fibers offer new dispersion properties, and large design flexibility.......Photonic bandgap fibers are describes using a new Kagomé cladding structure. These fibers may potentially guide light in low-index regions. Such fibers offer new dispersion properties, and large design flexibility....

  8. Optical devices based on liquid crystal photonic bandgap fibers

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard

    2005-01-01

    of LCs combined with the unique waveguiding features of PBG fibers gives the LC filled PCFs unique tunable properties. PBG guidance has been demonstrated for different mesophases of LCs and various functional compact fibers has been demonstrated, which utilitzes the high thermo-optical and electro-optical...... effects of LCs. Thermally controlled spectral filters and broadband switching functionalities, electrically controlled switches, polarizers and polarization rotators and an all-optical modulator has been demonstrated. The waveguiding mechanism of anistotropic PBGs fibers has been analyzed and spectral...

  9. Tunable photonic bandgap fiber based devices for optical networks

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard; Scolari, Lara; Rottwitt, Karsten

    2005-01-01

    In future all optical networks one of the enabling technologies is tunable elements including reconfigurable routers, switches etc. Thus, the development of a technology platform that allows construction of tuning components is critical. Lately, microstructured optical fibers, filled with liquid...

  10. Liquid crystal parameter analysis for tunable photonic bandgap fiber devices

    DEFF Research Database (Denmark)

    Weirich, Johannes; Lægsgaard, Jesper; Wei, Lei;

    2010-01-01

    We investigate the tunability of splay-aligned liquid crystals for the use in solid core photonic crystal fibers. Finite element simulations are used to obtain the alignment of the liquid crystals subject to an external electric field. By means of the liquid crystal director field the optical per...

  11. Optically fed microwave true-time delay based on a compact liquid-crystal hotonic-bandgap-fiber device

    DEFF Research Database (Denmark)

    Wei, Lei; Xue, Weiqi; Chen, Yaohui;

    2009-01-01

    An electrically tunable liquid-crystal, photonic-bandgap-fiber-device-based, optically fed microwave true-time delay is demonstrated with the response time in the millisecond range. A maximum electrically controlled phase shift of around 70° at 15GHz and an averaged 12.9ps true time delay over...

  12. Electrically tunable liquid crystal photonic bandgap fiber laser

    DEFF Research Database (Denmark)

    Olausson, Christina Bjarnal Thulin; Scolari, Lara; Wei, Lei;

    2010-01-01

    We demonstrate electrical tunability of a fiber laser by using a liquid crystal photonic bandgap fiber. Tuning of the laser is achieved by combining the wavelength filtering effect of a liquid crystal photonic bandgap fiber device with an ytterbium-doped photonic crystal fiber. We fabricate an al...

  13. Polarization properties of photonic bandgap fibers

    DEFF Research Database (Denmark)

    Broeng, Jes; Libori, Stig E. Barkou; Bjarklev, Anders Overgaard

    2000-01-01

    We present the first analysis of polarization properties of photonic bandgap fibers. Strong birefringence may be obtained for modest non-uniformities in and around the core region, suggesting the use of photonic bandgap fibers as polarization maintaining components.......We present the first analysis of polarization properties of photonic bandgap fibers. Strong birefringence may be obtained for modest non-uniformities in and around the core region, suggesting the use of photonic bandgap fibers as polarization maintaining components....

  14. Continuously tunable all-in-fiber devices based on thermal and electrical control of negative dielectric anisotropy liquid crystal photonic bandgap fibers

    DEFF Research Database (Denmark)

    Wei, Lei; Eskildsen, Lars; Weirich, Johannes;

    2009-01-01

    We infiltrate photonic crystal fibers with a negative dielectric anisotropy liquid crystal. 396nm bandgap shift is obtained in the temperature range 22°C-80°C, and 67 nm shift of long-wavelength bandgap edge is achieved by applying a voltage of 200Vrms. The polarization sensitivity and correspond...

  15. Actively doped solid core Photonic Bandgap Fiber

    DEFF Research Database (Denmark)

    Broeng, Jes; Olausson, Christina Bjarnal Thulin; Lyngsøe, Jens Kristian;

    2010-01-01

    Solid photonic bandgap fibers offer distributed spectral filtering with extraordinary high suppression. This opens new possibilities of artificially tailoring the gain spectrum of fibers. We present record-performance of such fibers and outline their future applications....

  16. Air-guiding Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Hansen, Theis Peter

    2005-01-01

    Photonic bandgap fibers that guide light in an air core have attracted much interest since their first demonstration in 1999. The prospect of low-loss guiding of light in air has importance for a multitude of applications, such as data transmission, gas sensors, dispersion compensation and guiding...... of high-power pulses. The low overlap between light and glass affects both the loss and nonlinear properties of the fiber. At the same time, the strong overlap between light and air provides a mean for creating convenient gas-filled devices with extremely long interaction lengths. In this project...

  17. Porous-core honeycomb bandgap THz fiber

    DEFF Research Database (Denmark)

    Nielsen, Kristian; Rasmussen, Henrik K.; Jepsen, Peter Uhd;

    2011-01-01

    In this Letter we propose a novel (to our knowledge) porous-core honeycomb bandgap design. The holes of the porous core are the same size as the holes in the surrounding cladding, thereby giving the proposed fiber important manufacturing benefits. The fiber is shown to have a 0:35-THz......-wide fundamental bandgap centered at 1:05 THz. The calculated minimum loss of the fiber is 0:25 dB=cm....

  18. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Science.gov (United States)

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2014-07-08

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  19. Advances in photonic bandgap fiber functionality

    DEFF Research Database (Denmark)

    Lyngsøe, Jens Kristian

    In order to take advantage of the many intriguing optical properties of photonic bandgap fibers, there are some technological challenges that have to be addressed. Among other things this includes transmission loss and the fibers ability to maintain field polarization. The work presented...... in this thesis addresses these two fundamental properties in both hollow core photonic crystal fibers and solid photonic bandgap fibers. Transmission loss in hollow core photonic crystal fibers is dominated by light scattering at the silica surfaces inside the fiber. In the current work it has been...... experimentally demonstrated that the minimum loss wavelength is located in the spectral region around 2000 nm, where the transmission loss in these fibers is significantly lower than in conventional solid silica fibers. Additionally it has been shown that transmission loss can be lowered roughly 40...

  20. Electrically controllable liquid crystal photonic bandgap fiber with dual-frequency control

    DEFF Research Database (Denmark)

    Scolari, Lara; Alkeskjold, Thomas Tanggaard; Riishede, Jesper

    2005-01-01

    We present an electrically tunable liquid crystal photonic bandgap fiber device based on a dual frequency liquid crystal with pre-tilted molecules that allows the bandgaps to be continuously tuned. The frequency dependent behavior of the liquid crystal enables active shifting of the bandgaps toward...

  1. Microfabricated bulk wave acoustic bandgap device

    Science.gov (United States)

    Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming, Carol

    2010-06-08

    A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

  2. Gas sensing using air-guiding photonic bandgap fibers

    DEFF Research Database (Denmark)

    Ritar, Tuomo; Tuominen, J.; Ludvigsen, Hanne

    2004-01-01

    We demonstrate the high sensitivity of gas sensing using a novel air-guiding photonic bandgap fiber. The bandgap fiber is spliced to a standard single-mode fiber at the input end for easy coupling and filled with gas through the other end placed in a vacuum chamber. The technique is applied...

  3. Polarizing 50micrometers Core Yb-Doped Photonic Bandgap Fiber

    Science.gov (United States)

    2015-02-08

    properly. Recent reports demonstrate that the birefringence in photonic bandgap fibers (PBFs) can provide single-polarization operation by shifting the...add ref]. Here, we demonstrate a 50µm core Yb-doped polarizing photonic bandgap fiber (PBF) for single-polarization operation 1. REPORT DATE (DD-MM...19-08-2015 Approved for public release; distribution is unlimited. Polarizing 50µm core Yb-doped photonic bandgap fiber The views, opinions and/or

  4. Jacquard-woven photonic bandgap fiber displays

    CERN Document Server

    Sayed, Imran; Skorobogatiy, Maksim

    2010-01-01

    We present an overview of photonic textile displays woven on a Jacquard loom, using newly discovered polymer photonic bandgap fibers that have the ability to change color and appearance when illuminated with ambient or transmitted light. The photonic fiber can be thin (smaller than 300 microns in diameter) and highly flexible, which makes it possible to weave in the weft on a computerized Jacquard loom and develop intricate double weave structures together with a secondary weft yarn. We demonstrate how photonic crystal fibers enable a variety of color and structural patterns on the textile, and how dynamic imagery can be created by balancing the ambient and emitted radiation. Finally, a possible application in security ware for low visibility conditions is described as an example.

  5. Liquid Crystals and Photonic Bandgap Fiber Components

    DEFF Research Database (Denmark)

    Weirich, Johannes; Wei, Lei; Scolari, Lara;

    Liquid Crystal(LC)filled Photonic Crystal Fibers(PCFs) represent a promising platform for the design and the fabrication of tunable all-in fiber devices. Tunability is achieved by varying the refractive index of the LC thermally, optically or electrically. In this contribution we present importan...

  6. Transmission properties of hollow-core photonic bandgap fibers

    DEFF Research Database (Denmark)

    Falk, Charlotte Ijeoma; Hald, Jan; Petersen, Jan C.

    2010-01-01

    Variations in optical transmission of four types of hollow-core photonic bandgap fibers are measured as a function of laser frequency. These variations influence the potential accuracy of gas sensors based on molecular spectroscopy in hollow-core fibers.......Variations in optical transmission of four types of hollow-core photonic bandgap fibers are measured as a function of laser frequency. These variations influence the potential accuracy of gas sensors based on molecular spectroscopy in hollow-core fibers....

  7. Optical tuning of photonic bandgaps in dye-doped nematic liquid crystal photonic crystal fibers

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard; Hermann, David Sparre;

    2005-01-01

    An all-optical modulator is demonstrated, which utilizes a pulsed 532 nm laser to modulate the spectral position of the bandgaps in a photonic crystal fiber infiltrated with a dye-doped nematic liquid crystal. In order to investigate the time response of the LCPBG fiber device, a low-power CW probe...

  8. Photonic bandgap fiber lasers and multicore fiber lasers for next generation high power lasers

    DEFF Research Database (Denmark)

    Shirakawa, A.; Chen, M.; Suzuki, Y.

    2014-01-01

    Photonic bandgap fiber lasers are realizing new laser spectra and nonlinearity mitigation that a conventional fiber laser cannot. Multicore fiber lasers are a promising tool for power scaling by coherent beam combination. © 2014 OSA....

  9. Photonic bandgap narrowing in conical hollow core Bragg fibers

    Energy Technology Data Exchange (ETDEWEB)

    Ozturk, Fahri Emre; Yildirim, Adem; Kanik, Mehmet [UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey); Bayindir, Mehmet, E-mail: bayindir@nano.org.tr [UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey); Department of Physics, Bilkent University, 06800 Ankara (Turkey)

    2014-08-18

    We report the photonic bandgap engineering of Bragg fibers by controlling the thickness profile of the fiber during the thermal drawing. Conical hollow core Bragg fibers were produced by thermal drawing under a rapidly alternating load, which was applied by introducing steep changes to the fiber drawing speed. In conventional cylindrical Bragg fibers, light is guided by omnidirectional reflections from interior dielectric mirrors with a single quarter wave stack period. In conical fibers, the diameter reduction introduced a gradient of the quarter wave stack period along the length of the fiber. Therefore, the light guided within the fiber encountered slightly smaller dielectric layer thicknesses at each reflection, resulting in a progressive blueshift of the reflectance spectrum. As the reflectance spectrum shifts, longer wavelengths of the initial bandgap cease to be omnidirectionally reflected and exit through the cladding, which narrows the photonic bandgap. A narrow transmission bandwidth is particularly desirable in hollow waveguide mid-infrared sensing schemes, where broadband light is coupled to the fiber and the analyte vapor is introduced into the hollow core to measure infrared absorption. We carried out sensing simulations using the absorption spectrum of isopropyl alcohol vapor to demonstrate the importance of narrow bandgap fibers in chemical sensing applications.

  10. Mode Division Multiplexing Exploring Hollow-Core Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Xu, Jing; Lyngso, Jens Kristian; Leick, Lasse

    2013-01-01

    We review our recent exploratory investigations on mode division multiplexing using hollow-core photonic bandgap fibers (HC-PBGFs). Compared with traditional multimode fibers, HC-PBGFs have several attractive features such as ultra-low nonlinearities, low-loss transmission window around 2 µm etc....

  11. Compact electrically controlled broadband liquid crystal photonic bandgap fiber polarizer

    DEFF Research Database (Denmark)

    Wei, Lei; Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard

    2009-01-01

    An electrically controlled liquid crystal photonic-bandgap fiber polarizer is experimentally demonstrated. A maximum 21.3dB electrically tunable polarization extinction ratio is achieved with 45° rotatable transmission axis as well as switched on and off in 1300nm–1600nm.......An electrically controlled liquid crystal photonic-bandgap fiber polarizer is experimentally demonstrated. A maximum 21.3dB electrically tunable polarization extinction ratio is achieved with 45° rotatable transmission axis as well as switched on and off in 1300nm–1600nm....

  12. Hollow multilayer photonic bandgap fibers for NIR applications

    Science.gov (United States)

    Kuriki, Ken; Shapira, Ofer; Hart, Shandon D.; Benoit, Gilles; Kuriki, Yuka; Viens, Jean F.; Bayindir, Mehmet; Joannopoulos, John D.; Fink, Yoel

    2004-04-01

    Here we report the fabrication of hollow-core cylindrical photonic bandgap fibers with fundamental photonic bandgaps at near-infrared wavelengths, from 0.85 to 2.28 μm. In these fibers the photonic bandgaps are created by an all-solid multilayer composite meso-structure having a photonic crystal lattice period as small as 260 nm, individual layers below 75 nm and as many as 35 periods. These represent, to the best of our knowledge, the smallest period lengths and highest period counts reported to date for hollow PBG fibers. The fibers are drawn from a multilayer preform into extended lengths of fiber. Light is guided in the fibers through a large hollow core that is lined with an interior omnidirectional dielectric mirror. We extend the range of materials that can be used in these fibers to include poly(ether imide) (PEI) in addition to the arsenic triselenide (As2Se3) glass and poly(ether sulfone) (PES) that have been used previously. Further, we characterize the refractive indices of these materials over a broad wavelength range (0.25 - 15 μm) and incorporated the measured optical properties into calculations of the fiber photonic band structure and a preliminary loss analysis.

  13. Biased liquid crystal photonic bandgap fiber

    DEFF Research Database (Denmark)

    Weirich, Johannes; Lægsgaard, Jesper; Alkeskjold, Thomas Tanggaard;

    2008-01-01

    We simulate the director structure of all capillaries in a biased photonic crystal fiber infiltrated with liquid crystals. Various mode simulations for different capillaries show the necessity to consider the entire structure....

  14. Accurate modelling of fabricated hollow-core photonic bandgap fibers.

    Science.gov (United States)

    Fokoua, Eric Numkam; Sandoghchi, Seyed Reza; Chen, Yong; Jasion, Gregory T; Wheeler, Natalie V; Baddela, Naveen K; Hayes, John R; Petrovich, Marco N; Richardson, David J; Poletti, Francesco

    2015-09-07

    We report a novel approach to reconstruct the cross-sectional profile of fabricated hollow-core photonic bandgap fibers from scanning electron microscope images. Finite element simulations on the reconstructed geometries achieve a remarkable match with the measured transmission window, surface mode position and attenuation. The agreement between estimated scattering loss from surface roughness and measured loss values indicates that structural distortions, in particular the uneven distribution of glass across the thin silica struts on the core boundary, have a strong impact on the loss. This provides insight into the differences between idealized models and fabricated fibers, which could be key to further fiber loss reduction.

  15. Soliton formation in hollow-core photonic bandgap fibers

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper

    2009-01-01

    of an approximate scaling relation is tested. It is concluded that compression of input pulses of several ps duration and sub-MW peak power can lead to a formation of solitons with ∼100 fs duration and multi-megawatt peak powers. The dispersion slope of realistic hollow-core fibers appears to be the main obstacle......The formation of solitons upon compression of linearly chirped pulses in hollow-core photonic bandgap fibers is investigated numerically. The dependence of soliton duration on the chirp and power of the input pulse and on the dispersion slope of the fiber is investigated, and the validity...

  16. Compact Design of an Electrically Tunable and Rotatable Polarizer Based on a Liquid Crystal Photonic Bandgap Fiber

    DEFF Research Database (Denmark)

    Wei, Lei; Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard

    2009-01-01

    In this letter, a compact electrically controlled broadband liquid crystal (LC) photonic bandgap fiber polarizer is designed and fabricated. A good fiber coupling quality between two single-mode fibers and one 10-mm-long LC-filled photonic crystal fiber is obtained and protected by using SU-8 fiber...... fixing structures during the device assembly. The total insertion loss of this all-in-fiber device is 2.7 dB. An electrically tunable polarization extinction ratio of 21.3 dB is achieved with 45$^{circ}$ rotatable transmission axis as well as switched on and off in the wavelength range of 1300–1600 nm....

  17. Photonic bandgap fibers: theory and experiments

    DEFF Research Database (Denmark)

    Bjarklev, Anders Overgaard; Broeng, Jes; Libori, Stig E. Barkou

    2000-01-01

    to localize modes in the core region by the photonic band gap (PBG) effect. The photonic crystal fibers (PCFs) were first proposed for a high-index-core region, surrounded by a periodic dielectric structure consisting of a matrix of microscopic holes placed in a silica-glass-base material....

  18. Biased liquid crystal infiltrated photonic bandgap fiber

    DEFF Research Database (Denmark)

    Weirich, Johannes; Lægsgaard, Jesper; Scolari, Lara

    2009-01-01

    partial differential equations. From the liquid crystal alignment the full tensorial dielectric permittivity in the capillaries is derived. The transmission spectrum for the photonic crystal fiber is obtained by solving the generalized eigenvalue problem deriving from Maxwell’s equations using a vector...

  19. Tunable All-in-Fiber Waveplates Based on Negative Dielectric Liquid Crystal Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Wei, Lei; Eskildsen, Lars; Weirich, Johannes;

    2008-01-01

    Tunable all-in-fiber waveplates based on negative dielectric liquid crystal photonic bandgap fibers are presented. The birefringence can be tuned electrically and thermally to work as a quarter-wave or a half-wave plate in the range 1520 nm-1580 nm....

  20. Reversed dispersion slope photonic bandgap fibers for broadband dispersion control in femtosecond fiber lasers.

    Science.gov (United States)

    Várallyay, Z; Saitoh, K; Fekete, J; Kakihara, K; Koshiba, M; Szipocs, R

    2008-09-29

    Higher-order-mode solid and hollow core photonic bandgap fibers exhibiting reversed or zero dispersion slope over tens or hundreds of nanometer bandwidths within the bandgap are presented. This attractive feature makes them well suited for broadband dispersion control in femtosecond pulse fiber lasers, amplifiers and optical parametric oscillators. The canonical form of the dispersion profile in photonic bandgap fibers is modified by a partial reflector layer/interface placed around the core forming a 2D cylindrical Gires-Tournois type interferometer. This small perturbation in the index profile induces a frequency dependent electric field distribution of the preferred propagating higher-order-mode resulting in a zero or reversed dispersion slope.

  1. SU-8 process optimization for high fiber coupling efficiency of liquid crystal filled photonic bandgap fiber components

    DEFF Research Database (Denmark)

    Wei, Lei; Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard

    2009-01-01

    SU-8 structures are built up to increase the fiber coupling efficiency of liquid crystal photonic bandgap fiber components. The resolution reduction of UV exposure is minimized to 4%, and insertion loss is reduced to 2.7dB.......SU-8 structures are built up to increase the fiber coupling efficiency of liquid crystal photonic bandgap fiber components. The resolution reduction of UV exposure is minimized to 4%, and insertion loss is reduced to 2.7dB....

  2. Design of photonic bandgap fibers by topology optimization

    DEFF Research Database (Denmark)

    Dühring, Maria Bayard; Sigmund, Ole; Feurer, Thomas

    2010-01-01

    A method based on topology optimization is presented to design the cross section of hollow-core photonic bandgap fibers for minimizing energy loss by material absorption. The optical problem is modeled by the timeharmonic wave equation and solved with the finite element program Comsol Multiphysics....... The optimization is based on continuous material interpolation functions between the refractive indices and is carried out by the method of moving asymptotes. An example illustrates the performance of the method where air and silica are redistributed around the core so that the overlap between the magnetic field...... distribution and the lossy silica material is reduced and the energy flow is increased 375% in the core. Simplified designs inspired from optimized geometry are presented, which will be easier to fabricate. The energy flow is increased up to almost 300% for these cases....

  3. Modeling of realistic cladding structures for photonic bandgap fibers

    DEFF Research Database (Denmark)

    Mortensen, Niels Asger; Nielsen, Martin Dybendal

    2004-01-01

    . For the fundamental bandgap we find that the bandgap edges (the intersections with the air line) shift toward shorter wavelengths when the air-filling fraction f is increased. The bandgap also broadens, and the relative bandwidth increases exponentially with f2. Compared with recent experiments [Nature 424, 657 (2003...

  4. High Thermal and Electrical Tunability of Negative Dielectric Liquid Crystal Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Wei, Lei; Scolari, Lara; Weirich, Johannes;

    2008-01-01

    We infiltrate photonic crystal fibers with negative dielectric liquid crystals. 400nm bandgap shift is obtained in the range 22ºC-80ºC and 119nm shift of the long-wavelength bandgap edge is achieved by applying a voltage of 200V....

  5. Silica-air photonic crystal fiber design that permits waveguiding by a true photonic bandgap effect

    DEFF Research Database (Denmark)

    Barkou, Stig Eigil; Broeng, Jes; Bjarklev, Anders Overgaard

    1999-01-01

    photonic crystal fibers. The novel fiber has a central low-index core region and a cladding consisting of a silica background material with air holes situated within a honeycomb lattice structure. We show the existence of photonic bandgaps for the silica–air cladding structure and demonstrate how light can...... be guided at the central low-index core region for a well-defined frequency that falls inside the photonic bandgap region of the cladding structure....

  6. Electrially tunable photonic bandgap guidance in a liquid crystal filled photonic crystal fiber

    DEFF Research Database (Denmark)

    Haakestad, Magnus W.; Alkeskjold, Thomas Tanggaard; Nielsen, Martin Dybendal;

    2005-01-01

    Tunable bandgap guidance is obtained by filling the holes of a solid core photonic crystal fiber with a nematic liquid crystal and applying an electric field. The response times are measured and found to be in the millisecond range.......Tunable bandgap guidance is obtained by filling the holes of a solid core photonic crystal fiber with a nematic liquid crystal and applying an electric field. The response times are measured and found to be in the millisecond range....

  7. Highly tunable large core single-mode liquid crystal photonic bandgap fiber

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard; Lægsgaard, Jesper; Bjarklev, Anders Overgaard;

    2006-01-01

    We demonstrate a highly tunable photonic bandgap fiber, which has a large-core diameter of 25 mu m and an effective mode area of 440 mu m(2). The tunability is achieved by infiltrating the air holes of a photonic crystal fiber with an optimized liquid-crystal mixture having a large temperature...... gradient of the refractive indices at room temperature. A bandgap tuning sensitivity of 27 nm/degrees C is achieved at room temperature. The insertion loss is estimated to be less than 0.5 dB and caused mainly by coupling loss between the index-guided mode and the bandgap-guided mode. (c) 2006 Optical...

  8. Bandgaps of the Chalcogenide Glass Hollow-Core Photonic Crystal Fiber

    Science.gov (United States)

    Li, Shu-Guang; Zhou, Hong-Song; Yin, Guo-Bing

    2011-11-01

    Bandgaps of chalcogenide glass hollow-core photonic crystal fibers (GLS HC-PCFs) are analyzed by using the plane-wave expansion method. A mid-infrared laser can propagate in these low confinement loss fibers when the wavelength falls into the bandgaps. For enlarging the bandgap width, an improved GLS HC-PCF is put forward, the normalized frequency kΛ of the improved fiber is from 7.2 to 8.5 in its first bandgap. The improved GLS HC-PCF with pitch of 4.2 μm can transmit the lights with wavelengths ranging from 3.1 μm to 3.7 μm.

  9. Bandgaps of the Chalcogenide Glass Hollow-Core Photonic Crystal Fiber

    Institute of Scientific and Technical Information of China (English)

    LI Shu-Guang; ZHOU Hong-Song; YIN Guo-Bing

    2011-01-01

    Bandgaps of chalcogenide glass hollow-core photonic crystal fibers (GLS HC-PCFs) are analyzed by using the plane-wave expansion method. A mid-infrared laser can propagate in these low confinement loss fibers when the wavelength falls into the bandgaps. For enlarging the bandgap width, an improved GLS HC-PCF is put forward, the normalized frequency kA of the improved fiber is from 7.2 to 8.5 in its first bandgap. The improved GLS HC-PCF with pitch of 4.2μm can transmit the lights with wavelengths ranging from 3.1μm to 3.7μm.%Bandgaps of chalcogenide glass hollow-core photonic crystal fibers (GLS HC-PCFs) are analyzed by using the plane-wave expansion method.A mid-infrared laser can propagate in these low confinement loss fibers when the wavelength falls into the bandgaps.For enlarging the bandgap width,an improved GLS HC-PCF is put forward,the normalized frequency κA of the improved fiber is from 7.2 to 8.5 in its first bandgap.The improved GLS HC-PCF with pitch of 4.2μm can transmit the lights with wavelengths ranging from 3.1 μm to 3.7 μm.Photonic crystal fibers (PCFs) can be classified into total internal reflection PCFs and photonic bandgap (PBG) PCFs[1] Solid core PCFs are one kind of the total internal reflection PCFs;hollow-core PCFs (HC-PCFs) are a kind of typical PBG fibers.The conception of HC-PCFs was first proposed by Russel in 1991.[2] Later,it was theoretically demonstrated by Birks et al.[3] in 1995.A bandgap photonic crystal fiber was mde by Knight et al.[4] for the first time in 1998.On the basis of these works,the first HC-PCF was designed and made by Cregan et al.[5] in 1999.

  10. Photonic band-gap engineering in UV fiber gratings by the arc discharge technique.

    Science.gov (United States)

    Cusano, Andrea; Iadicicco, Agostino; Paladino, Domenico; Campopiano, Stefania; Cutolo, Antonello

    2008-09-29

    Localized heat treatments combined with local non-adiabatic tapering is proposed as suitable tool for the engineering of photonic band-gaps in UV-written fiber Bragg gratings (FBGs). In particular, here, we propose the use of the electric arc discharge to achieve localized defects along the FBG structure, however differently from previously reported works, we demonstrate how this post processing tool properly modified can be exploited to achieve the full control of the spectral characteristics of the final device. Also, we show how the suitable choice of the grating features and the correct selection of the defect geometry can be efficiently used to achieve interesting features for both communication and sensing applications.

  11. A 158 fs 5.3 nJ fiber-laser system at 1 mu m using photonic bandgap fibers for dispersion control and pulse compression

    DEFF Research Database (Denmark)

    Nielsen, C.K.; Jespersen, Kim Giessmann; Keiding, S.R.

    2006-01-01

    We demonstrate a 158 fs 5.3 nJ mode-locked laser system based on a fiber oscillator, fiber amplifier and fiber compressor. Dispersion compensation in the fiber oscillator was obtained with a solid-core photonic bandgap (SC-PBG) fiber spliced to standard fibers, and external compression is obtained...... with a hollow-core photonic bandgap (HC-PBG) fiber....

  12. Millijoule Pulse Energy Second Harmonic Generation With Single-Stage Photonic Bandgap Rod Fiber Laser

    DEFF Research Database (Denmark)

    Laurila, Marko; Saby, Julien; Alkeskjold, Thomas Tanggaard

    2011-01-01

    In this paper, we demonstrate, for the first time, a single-stage Q-switched single-mode (SM) ytterbium-doped rod fiber laser delivering record breaking pulse energies at visible and UV light. We use a photonic bandgap rod fiber with a mode field diameter of 59μm based on a new distributed...

  13. Impact of structural distortions on the performance of hollow-core photonic bandgap fibers

    OpenAIRE

    2014-01-01

    We present a generic model for studying numerically the performance of hollow-core photonic bandgap fibers (HC-PBGFs) with arbitrary cross-sectional distortions. Fully vectorial finite element simulations reveal that distortions beyond the second ring of air holes have an impact on the leakage loss and bandwidth of the fiber, but do not significantly alter its surface scattering loss which remains the dominant contribution to the overall fiber loss (providing that a sufficient number of rings...

  14. Transmission Bandwidth Tunability of a Liquid-Filled Photonic Bandgap Fiber

    Institute of Scientific and Technical Information of China (English)

    ZOU Bing; LIU Yan-Ge; DU Jiang-Sing; WANG Zhi; HAN Ting-Ting; XU Jian-Bo; LI Yuan; LIU Bo

    2009-01-01

    @@ A temperature tunable photonic bandgap tiber (PBGF) is demonstrated by an index-guiding photonic crystal fiber filled with high-index liquid. The temperature tunable characteristics of the fiber axe experimentally and numerically investigated. Compression of transmission bandwidth of the PBGF is demonstrated by changing the temperature of part of the fiber. The tunable transmission bandwidth with a range of 250 nm is achieved by changing the temperature from 30℃ to 90℃.

  15. Study on the photonic bandgaps of hollow-core microstructured fibers

    Institute of Scientific and Technical Information of China (English)

    Zhaolun Liu; Guiyao Zhou; Lantian Hou

    2006-01-01

    A simple method is presented to measure the transmission spectrum of hollow-core microstructured fibers in the visible, near-infrared, and mid-infrared regions. The plane wave expansion method is applied to analyze the photonic bandgaps of hollow-core microstructured fibers. The experimental results indicate that there are several strong transmission bands in the near-infrared and mid-infrared region, but hardly any transmission phenomena in the visible region, which shows that there are some bandgaps in nearinfrared wavelength. The experimental results are consistent with the numerically simulative results using a plane wave expansion method.

  16. Hollow core photonic bandgap fiber with microfluid-infiltrated air holes for slow-light propagation

    Science.gov (United States)

    Ren, Liyong; Liang, Jian; Yun, Maojin

    2012-10-01

    Slow light plays an important role in the fields of all-optical signal processing and integration photonics. It has shown many potential applications, such as realizing optical delay lines or buffers, enhancing linear and nonlinear light-matter interactions, as well as increasing the sensitivity of the interferometers and transducers. In this paper, hollow-core photonic bandgap fibers made from high index glasses are designed by infiltrating microfluid into the air-holes to tailor the fiber dispersion for slow-light propagation under low pulse distortion. In such a fiber made from Si material, group index ng~8 is obtained with a bandwidth up to 30 nm, where the group index fluctuation is restricted in ±10 % of the ng, while ng~6 is obtained with a bandwidth over 100 nm when the chalcogenide material is selected instead. Such a ±10 % criterion determines a regarded flatland region accordingly, and in this region the group velocity dispersion can be negligible. It is found that for the same fiber length the slow-light time delay in the photonic bandgap fiber is much larger as compared with that in the single mode fiber. This kind of photonic bandgap fiber may have many potential applications in short-distance fiber communications and delay lines.

  17. Fabrication of Optical Fiber Devices

    Science.gov (United States)

    Andres, Miguel V.

    In this paper we present the main research activities of the Laboratorio de Fibras Opticas del Instituto de Ciencia de los Materiales de la Universidad de Valencia. We show some of the main results obtained for devices based on tapered fibers, fiber Bragg gratings, acousto-optic effects and photonic crystal fibers.

  18. Compression of realistic laser pulses in hollow-core photonic bandgap fibers

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper; Roberts, John

    2009-01-01

    Dispersive compression of chirped few-picosecond pulses at the microjoule level in a hollow-core photonic bandgap fiber is studied numerically. The performance of ideal parabolic input pulses is compared to pulses from a narrowband picosecond oscillator broadened by self-phase modulation during...

  19. Experimental investigation of hollow-core photonic crystal fibers with five photonic band-gaps

    Institute of Scientific and Technical Information of China (English)

    YUAN Jin-hui; HOU Lan-tian; WEI Dong-bin; WANG Hai-yun; ZHOU Gui-yao

    2008-01-01

    The hollow-core photonic crystal fibers (HC-PCFs) with integrity structure have been fabricated with an improved twice stack-and-draw technique. The transmission spectrum shows that five photonic band-gaps within 450-1100 nm have been obtained.And the green light transmission in the HC-PCFs'has been observed remarkably.

  20. Reflection-induced bias error in an air-core photonic bandgap fiber optic gyroscope.

    Science.gov (United States)

    Zhang, Zuchen; Xu, Xiaobin; Zhang, Zhihao; Song, Ningfang; Zhang, Chunxi

    2016-01-15

    Analysis of the bias error induced by reflections in an air-core photonic bandgap fiber gyroscope is performed by both simulation and experiment. The bias error is sinusoidally periodic under modulation, and its intensity is related to the relative positions of the reflection points. A simple and effective method for the suppression of the error is proposed, and it has been verified experimentally.

  1. Transmission properties of hollow-core photonic bandgap fibers in relation to molecular spectroscopy

    DEFF Research Database (Denmark)

    Falk, Charlotte Ijeoma; Hald, Jan; Petersen, Jan C.;

    2010-01-01

    The transmission properties of five types of hollow-core photonic bandgap fibers (HC-PBFs) are characterized in the telecom wavelength range around 1:5 μm. The variations in optical transmission are measured as a function of laser frequency over a 2GHz scan range as well as a function of time over...

  2. 30W, 1178nm Yb-doped photonic bandgap fiber amplifier

    DEFF Research Database (Denmark)

    Shirakawa, Akira; Maruyama, Hiroki; Ueda, Ken-ichi;

    2009-01-01

    High-power, high-efficiency ytterbium-doped solid-core photonic-bandgap fiber amplification at the long-wavelength edge of the Yb gain band is reported. Amplified-spontaneous-emission-free, 30W nonpolarized and 25W linearly-polarized 1178nm outputs have been achieved with

  3. Investigation of residual core ellipticity induced nonreciprocity in air-core photonic bandgap fiber optical gyroscope.

    Science.gov (United States)

    Xu, Xiaobin; Zhang, Zuchen; Zhang, Zhihao; Jin, Jing; Song, Ningfang

    2014-11-01

    Air-core photonic bandgap fiber (PBF) is an excellent choice for fiber optic gyroscope owing to its incomparable adaptability of environment. Strong and continuous polarization mode coupling is found in PBFs with an average intensity of ~-30 dB, but the coupling arrives at the limit when the maximum optical path difference between the primary waves and the polarization-mode-coupling-induced secondary waves reaches ~10mm, which is corresponding to the PBF length of ~110 m according to the birefringence in the PBF. Incident light with the low extinction ratio (ER) can suppress the birth of the polarization-mode-coupling-induced secondary waves, but the low-ER light obtained by the conventional Lyot depolarizers does not work here. Consequently, a large nonreciprocity and a bias error of ~13°/h are caused in the air-core photonic bandgap fiber optical gyroscope (PBFOG) with a PBF coil of ~268 m.

  4. Photosensitive, all-glass AgPO3/silicaphotonic bandgap fiber.

    Science.gov (United States)

    Konidakis, Ioannis; Zito, Gianluigi; Pissadakis, Stavros

    2012-07-01

    Photonic bandgap (PBG) guidance is observed in a solid core photonic crystal fiber (PCF) consisting of silver metaphosphate (AgPO(3)) glass embedded into a silica cladding, realized by vacuum-assisted infiltration of the molten glass into the hollow channels of a commercial silica PCF. Morphologic analysis of the cladding microstructure by optical and scanning electron microscopy reveals the formation of highly homogeneous glass strands along the PCF length. The characteristic transmission spectrum of the fiber shows PBG guidance in the range between 350 and 1650 nm. The exposure of the cladding glass matrix, using 355 nm, 150 ps laser irradiation, allows photo-induced enhancement of the transmission-to-stop-band extinction ratio by ∼60 dB/cm and bandwidth tuning. Numerical calculations of the transmission pattern of the fabricated AgPO(3)/silica bandgap fiber are in good agreement with experiments.

  5. Optoelectronic devices based on graded bandgap structures utilising electroplated semiconductors

    OpenAIRE

    2016-01-01

    The main aim of the work presented in this thesis is to develop low-cost multi-junction graded bandgap solar cells using electroplated semiconductors. The semiconductor materials explored in this research are CdSe, ZnTe, CdS, CdMnTe and CdTe thin films. These layers were characterised for their structural, compositional, morphological, optical, and electrical features using XRD, Raman spectroscopy, EDX, SEM, UV-Vis spectroscopy, PEC cell, C-V, I-V and UPS measurement techniques respectively. ...

  6. Numerical simulation and analysis of losses in air-core plastic photonic bandgap fibers

    Institute of Scientific and Technical Information of China (English)

    Tieshan Guan; Mingyang Chen; Zhilong Zhang; Rongjin Yu

    2005-01-01

    @@ The loss properties of air-core plastic photonic bandgap fibers are analyzed by multipole method. Despite the relatively large absorption loss of plastics (PMMA), the contribution of material absorption loss can be reduced significantly through appropriate selection of operating wavelength, number of cladding air-hole rings, radius of air-core, and position of photonic band gap. The transmission loss in this type of fiber can be decreased by an order of magnitude in comparison with that of conventional plastic optical fiber.

  7. The Second Order Guided Modes Based on Photonic Bandgap Effects in Air/Glass Photonic Crystal Fibers

    Institute of Scientific and Technical Information of China (English)

    YAO Lei; LOU Shu-Qin; JIAN Shui-Sheng

    2009-01-01

    We introduce a defect site in the periodic structure of a photonic bandgap fiber,to confine and guide the second order mode by photonic bandgap effects.Based on a high air-filling fraction photonic crystal cladding structure,a simplified model with an equivalent air cladding was proposed to explore and analyze the properties of this second order guided mode.

  8. THz Photonic Band-Gap Prisms Fabricated by Fiber Drawing

    DEFF Research Database (Denmark)

    Busch, Stefan F.; Xu, Lipeng; Stecher, Matthias;

    2012-01-01

    We suggest a novel form of polymeric based 3D photonic crystal prisms for THz frequencies which could be fabricated using a standard fiber drawing technique. The structures are modeled and designed using a finite element analyzing technique. Using this simulation software we theoretically study...

  9. Gaussian Filtering with Tapered Oil-Filled Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Brunetti, Anna Chiara; Scolari, Lara; Weirich, Johannes;

    2008-01-01

    A tunable Gaussian filter based on a tapered oil-filled photonic crystal fiber is demonstrated. The filter is centered at X=1364nm with a bandwidth (FWHM) of 237nm. Tunability is achieved by changing the temperature of the filter. A shift of 210nm of the central wavelength has been observed by in...

  10. Microstructured and Photonic Bandgap Fibers for Applications in the Resonant Bio- and Chemical Sensors

    Directory of Open Access Journals (Sweden)

    Maksim Skorobogatiy

    2009-01-01

    Full Text Available We review application of microstructured and photonic bandgap fibers for designing resonant optical sensors of changes in the value of analyte refractive index. This research subject has recently invoked much attention due to development of novel fiber types, as well as due to development of techniques for the activation of fiber microstructure with functional materials. Particularly, we consider two sensors types. The first sensor type employs hollow core photonic bandgap fibers where core guided mode is confined in the analyte filled core through resonant effect in the surrounding periodic reflector. The second sensor type employs metalized microstructured or photonic bandgap waveguides and fibers, where core guided mode is phase matched with a plasmon propagating at the fiber/analyte interface. In resonant sensors one typically employs fibers with strongly nonuniform spectral transmission characteristics that are sensitive to changes in the real part of the analyte refractive index. Moreover, if narrow absorption lines are present in the analyte transmission spectrum, due to Kramers-Kronig relation this will also result in strong variation in the real part of the refractive index in the vicinity of an absorption line. Therefore, resonant sensors allow detection of minute changes both in the real part of the analyte refractive index (10−6–10−4 RIU, as well as in the imaginary part of the analyte refractive index in the vicinity of absorption lines. In the following we detail various resonant sensor implementations, modes of operation, as well as analysis of sensitivities for some of the common transduction mechanisms for bio- and chemical sensing applications. Sensor designs considered in this review span spectral operation regions from the visible to terahertz.

  11. Influence of air pressure on soliton formation in hollow-core photonic bandgap fibers

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper; Roberts, Peter John

    2009-01-01

    Abstract Soliton formation during dispersive compression of chirped few-picosecond pulses at the microjoule level in a hollow-core photonic bandgap (HC-PBG) fiber is studied by numerical simulations. Long-pass filtering of the emerging frequency-shifted solitons is investigated with the objective...... at high powers. This allows a scaling of the output pulse energy toward the microjoule level. © 2009 Optical Society of America...

  12. Photonic Bandgap Propagation in All-Solid Chalcogenide Microstructured Optical Fibers

    Directory of Open Access Journals (Sweden)

    Celine Caillaud

    2014-08-01

    Full Text Available An original way to obtain fibers with special chromatic dispersion and single-mode behavior is to consider microstructured optical fibers (MOFs. These fibers present unique optical properties thanks to the high degree of freedom in the design of their geometrical structure. In this study, the first all-solid all-chalcogenide MOFs exhibiting photonic bandgap transmission have been achieved and optically characterized. The fibers are made of an As38Se62 matrix, with inclusions of Te20As30Se50 glass that shows a higher refractive index (n = 2.9. In those fibers, several transmission bands have been observed in mid infrared depending on the geometry. In addition, for the first time, propagation by photonic bandgap effect in an all-chalcogenide MOF has been observed at 3.39 µm, 9.3 µm, and 10.6 µm. The numerical simulations based on the optogeometric properties of the fibers agree well with the experimental characterizations.

  13. A low-bandgap semiconducting polymer for photovoltaic devices and infrared emitting diodes

    NARCIS (Netherlands)

    Brabec, C.J.; Winder, C.; Sariciftci, N.S.; Hummelen, J.C.; Dhanabalan, A.; van Hal, P.A.; Janssen, R.A.J.

    2002-01-01

    A novel low-bandgap conjugated polymer (PTPTB, E-g = similar to1.6 eV), consisting of alternating electron-rich N-dodecyl-2,5-bis(2'-thienyl)pyrrole (TPT) and electron-deficient 2,1,3-benzothiadiazole (B) units, is introduced for thin-film optoelectronic devices working in the near infrared (NIR). B

  14. Impact of structural distortions on the performance of hollow-core photonic bandgap fibers.

    Science.gov (United States)

    Fokoua, Eric Numkam; Richardson, David J; Poletti, Francesco

    2014-02-10

    We present a generic model for studying numerically the performance of hollow-core photonic bandgap fibers (HC-PBGFs) with arbitrary cross-sectional distortions. Fully vectorial finite element simulations reveal that distortions beyond the second ring of air holes have an impact on the leakage loss and bandwidth of the fiber, but do not significantly alter its surface scattering loss which remains the dominant contribution to the overall fiber loss (providing that a sufficient number of rings of air holes (≥ 5) are used). We have found that while most types of distortions in the first two rings are generally detrimental, enlarging the core defect while keeping equidistant and on a circular boundary the glass nodes surrounding the core may produce losses half those compared to "idealized" fiber designs and with no penalty in terms of the transmission bandwidth.

  15. Wide-Bandgap Semiconductor Devices for Automotive Applications

    Science.gov (United States)

    Sugimoto, M.; Ueda, H.; Uesugi, T.; Kachi, T.

    2007-06-01

    In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size inverters for future automobiles.

  16. Hollow-core photonic bandgap fibers for orbital angular momentum applications

    Science.gov (United States)

    Li, H.; Ren, G.; Gao, Y.; Zhu, B.; Wang, J.; Yin, B.; Jian, S.

    2017-04-01

    We present a study on the potential and challenges of guiding orbital angular momentum (OAM) modes in hollow-core photonic bandgap fibers (HC-PBGFs). Two 19-cell HC-PBGFs with different structural parameters are comparably investigated. The OAM mode properties in a 37-cell HC-PBGF are also discussed to explore the scalability of OAM states. Characteristics of vector modes and OAM modes are comprehensively analyzed with numerical simulations. The results show HC-PBGF with a larger core could effectively support more OAM modes with lower confinement loss and a larger effective area. In addition, HC-PBGF with a deeper and wider photonic bandgap is advantageous for achieving low crosstalk OAM transmission over a broader band-width. 19-cell HC-PBGFs could support OAM modes with purity beyond 0.9, and the value can be further improved by exploiting the 37-cell HC-PBGF.

  17. Silica-glass contribution to the effective nonlinearity of hollow-core photonic band-gap fibers.

    Science.gov (United States)

    Hensley, Christopher J; Ouzounov, Dimitre G; Gaeta, Alexander L; Venkataraman, Natesan; Gallagher, Michael T; Koch, Karl W

    2007-03-19

    We measure the effective nonlinearity of various hollow-core photonic band-gap fibers. Our findings indicate that differences of tens of nanometers in the fiber structure result in significant changes to the power propagating in the silica glass and thus in the effective nonlinearity of the fiber. These results show that it is possible to engineer the nonlinear response of these fibers via small changes to the glass structure.

  18. DNA-Based Photonic Bandgap Structures and Devices

    Science.gov (United States)

    2009-11-29

    Genes to Machines: DNA Nanomechanical Devices, Trends in Biochemical Sciences 30, 119-125 (2005). 4. N.C. Seeman. Structural DNA Nanotechnology: An... kpc ≥ ω , k becomes purely real.. If the dispersion relation just given is written as =++ 22)( kpkak 1ε 2)( c ω , it resembles that for modes in a...waveguide. By analogy, the frequency region for which 1ε 22)( kpc < ω will be referred to as cutoff. IV. APPLICATIONS The presence of molecules

  19. Optical Fiber Devices in WDM Networks

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Crystal optics and fiber grating technology are two of the most important optical fiber device technologies. In this paper, we report several new devices developed in Accelink for WDM networks application.

  20. Optical Fiber Devices in WDM Networks

    Institute of Scientific and Technical Information of China (English)

    Shan Jiang; Yong Luo; Xinda Yin; Wei Shi; Qianggao Hu

    2003-01-01

    Crystal optics and fiber grating technology are two of the most important optical fiber device technologies.In this paper, we report several new devices developed in Accelink for WDM networks application.

  1. Phase sensitivity of hollow-core photonic bandgap fiber to acoustic pressure

    Science.gov (United States)

    Pang, M.; Jin, W.

    2009-10-01

    Detection of acoustic pressure with optical fiber interferometers has been studied for many years1-3. The conventional solid silica fiber hydrophone was sufficient to prove the concept; however, it has low acoustic sensitivity. This is because 1) the silica glass material has relatively high Young's modulus, which makes the conventional fiber incompressible; 2) the refractive index change resulted from fiber strain has opposite sign with respective to the strain term and hence compromises the acoustic sensitivity. In a hollow-core photonic bandgap fiber (PBF), the fundamental mode is almost entirely confined to the air core, the effective Young's modulus of fiber is expected to be reduced and the undesirable "negative" index effect is anticipated to be greatly decreased. We experimentally measured that the phase sensitivity of the commercial HC-1550-02 PBF and found it is improved by a factor of 15dB compared to a conventional (HNSM-155) single mode fiber, which agrees well with theoretical prediction.

  2. Analysis of liquid crystal properties for photonic crystal fiber devices

    DEFF Research Database (Denmark)

    Weirich, Johannes; Lægsgaard, Jesper; Wei, Lei;

    2009-01-01

    We analyze the bandgap structure of Liquid Crystal infiltrated Photonic Crystal Fibers depending on the parameters of the Liquid Crystals by means of finite element simulations. For a biased Liquid Crystal Photonic Crystal Fiber, we show how the tunability of the bandgap position depends on the L...

  3. Continuous generation of Rubidium vapor in hollow-core photonic band-gap fibers

    CERN Document Server

    Donvalkar, Prathamesh S; Clemmen, Stephane; Gaeta, Alexander L

    2015-01-01

    We demonstrate high optical depths (50+/-5), lasting for hours in Rubidium-filled hollow-core photonic band-gap fibers, which represents a 1000X improvement over operation times previously reported. We investigate the vapor generation mechanism using both a continuous-wave and a pulsed light source and find that the mechanism for generating the Rubidium atoms is primarily due to thermal vaporization. Continuous generation of large vapor densities should enable measurements at the single-photon level by averaging over longer time scales.

  4. Hollow-core photonic bandgap fiber gas sensor with high sensitivity and fast response

    Science.gov (United States)

    Yang, Fan; Jin, Wei; Cao, Yingchun; Ho, Hoi Lut

    2014-05-01

    The effects of modal interference (MI) on the performance of hollow-core photonic bandgap fiber (HC-PBF) gas sensors are investigated. By optimizing mode launch, applying wavelength modulation with proper modulation parameters as well as appropriate digital signal processing, an estimated lower detection limit of drilling side-hole on the MI and response time are also studied. With a 62-cm long sensing HC-PBF drilled with multiple side-holes, an acetylene sensor with a lower detection limit of 11 ppmv and a recovery time of 2 minute is demonstrated.

  5. Backward Secondary-Wave Coherence Errors in Photonic Bandgap Fiber Optic Gyroscopes

    Science.gov (United States)

    Xu, Xiaobin; Song, Ningfang; Zhang, Zuchen; Jin, Jing

    2016-01-01

    Photonic bandgap fiber optic gyroscope (PBFOG) is a novel fiber optic gyroscope (FOG) with excellent environment adaptability performance compared to a conventional FOG. In this work we find and investigate the backward secondary-wave coherence (BSC) error, which is a bias error unique to the PBFOG and caused by the interference between back-reflection-induced and backscatter-induced secondary waves. Our theoretical and experimental results show a maximum BSC error of ~4.7°/h for a 300-m PBF coil with a diameter of 10 cm. The BSC error is an important error source contributing to bias instability in the PBFOG and has to be addressed before practical applications of the PBFOG can be implemented. PMID:27338388

  6. Photolithography of thick photoresist coating for electrically controlled liquid crystal photonic bandgap fibre devices

    DEFF Research Database (Denmark)

    Wei, Lei; Khomtchenko, Elena; Alkeskjold, Thomas Tanggaard

    2009-01-01

    Thick photoresist coating for electrode patterning in an anisotropically etched V-groove is investigated for electrically controlled liquid crystal photonic bandgap fibre devices. The photoresist step coverage at the convex corners is compared with and without soft baking after photoresist spin...... coating. Two-step UV exposure is applied to achieve a complete exposure for the thick photoresist layer at the bottom of the V-groove, and minimise the reduction in resolution and image distortion. The resolution reduction of the different open window width for electrode pattern transfer is also...

  7. A low-bandgap semiconducting polymer for photovoltaic devices and infrared emitting diodes

    OpenAIRE

    C. J. Brabec; Winder, C.; Sariciftci, N. S.; Hummelen, J.C.; Dhanabalan, A; Hal, P.A. van; Janssen, R. A. J.

    2002-01-01

    A novel low-bandgap conjugated polymer (PTPTB, E-g = similar to1.6 eV), consisting of alternating electron-rich N-dodecyl-2,5-bis(2'-thienyl)pyrrole (TPT) and electron-deficient 2,1,3-benzothiadiazole (B) units, is introduced for thin-film optoelectronic devices working in the near infrared (NIR). Bulk heterojunction photovoltaic cells from solid-state composite films of PTPTB with the soluble fullerene derivative [6,6]-phenyl C-61 butyric acid methyl ester (PCBM) as an active layer shows pro...

  8. Waveguiding and bending modes in a plasma photonic crystal bandgap device

    Directory of Open Access Journals (Sweden)

    B. Wang

    2016-06-01

    Full Text Available Waveguiding and bending modes are investigated in a fully tunable plasma photonic crystal. The plasma device actively controls the propagation of free space electromagnetic waves in the S to X band of the microwave spectrum. An array of discharge plasma tubes form a square crystal lattice exhibiting a well-defined bandgap, with individual active switching of the plasma elements to allow for waveguiding and bending modes to be generated dynamically. We show, through simulations and experiments, the existence of transverse electric (TE mode waveguiding and bending modes.

  9. Design of a Polymer-Based Hollow-Core Bandgap Fiber for Low-Loss Terahertz Transmission

    DEFF Research Database (Denmark)

    Barh, Ajanta; Varshney, Ravi K.; Pal, Bishnu P.;

    2016-01-01

    wavelength-scale circular air holes in a hexagonal pattern, embedded in a uniform Teflon matrix. The THz guidance in this fiber is achieved by exploiting the photonic bandgap (PBG) effect. In our low index contrast Teflon-air (1.44:1) hexagonal periodic lattice, the PBG appears only for a certain range...

  10. Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices

    Energy Technology Data Exchange (ETDEWEB)

    Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

    2016-11-21

    Band-edge effects - including grading, electrostatic fluctuations, bandgap fluctuations, and band tails - affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In, Ga)Se2 devices, recent increases in diffusion length imply changes to the optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties, is examined.

  11. Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

    2016-06-16

    Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

  12. The ideal chip is not enough: Issues retarding the success of wide band-gap devices

    Science.gov (United States)

    Kaminski, Nando

    2017-04-01

    Semiconductor chips made from the wide band-gap (WBG) materials silicon carbide (SiC) or gallium nitride (GaN) are already approaching the theoretical limits given by the respective materials. Unfortunately, their advantages over silicon devices cannot be fully exploited due to limitations imposed by the device packaging or the circuitry around the semiconductors. Stray inductances slow down the switching speed and increase losses, packaging materials limit the maximum temperature and the maximum useful temperature swing, and passives limit the maximum switching frequency. All these issues have to be solved or at least minimised to make WBG attractive for a wider range of applications and, consequently, to profit from the economy of scale.

  13. Towards self-similar propagation in a dispersion tailored and highly nonlinear segmented bandgap fiber at 2.8 micron

    CERN Document Server

    Biswas, Piyali; Biswas, Abhijit; Pal, Bishnu P

    2016-01-01

    We numerically demonstrate self-similar propagation of parabolic optical pulses through a highly nonlinear and passive specialty photonic bandgap fiber at 2.8 micron. In this context, we have proposed a scheme endowed with a rapidly varying, but of nearly-mean-zero longitudinal dispersion and modulated nonlinear profile in order to achieve self-similarity of the formed parabolic pulse propagating over longer distances. To implement the proposed scheme, we have designed a segmented bandgap fiber with suitably tapered counterparts to realize such customized dispersion with chalchogenide glass materials. A self-similar parabolic pulse with full-width-at-half-maxima of 4.12 ps and energy of ~ 39 pJ as been achieved at the output. Along with a linear chirp spanning over the entire pulse duration, 3dB spectral broadening of about 38 nm at the output has been reported.

  14. Polarization Properties of Elliptical-Hole Liquid Crystal Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Tartarini, Giovanni; Pansera, Marco; Alkeskjold, Thomas Tanggaard;

    2007-01-01

    ellipticity allow some phenomena that are not predicted yet, such as polarization-dependent losses and birefringence sign change in the wavelength range used for standard telecom fibers. Control of these features allows the design of new devices for sensing or telecommunication applications......The characteristics of triangular photonic crystal fibers (PCFs) with elliptical holes filled with a nematic liquid crystal (LC) are investigated theoretically. The analysis that is carried out using the finite-element method, including material dispersion effects, shows that LC anisotropy and hole...

  15. All fiber M-Z interferometer for high temperature sensing based on a hetero-structured cladding solid-core photonic bandgap fiber.

    Science.gov (United States)

    Hu, Xiongwei; Shen, Xiang; Wu, Jianjun; Peng, Jinggang; Yang, Lvyun; Li, Jinyan; Li, Haiqin; Dai, Nengli

    2016-09-19

    We proposed and experimentally demonstrated a high temperature fiber sensor using a hetero-structured cladding solid-core photonic bandgap fiber (HCSC-PBGF) for the first time to our knowledge. A hetero-structured cladding solid-core photonic bandgap fiber is designed and fabricated that supports vibrant core mode and cladding mode transmission. Then, an all fiber M-Z interference sensor is constructed by splicing single mode fiber at both ends of HCSC-PBGF without any other micromachining. The transmission characteristics of HCSC-PBGF are analyzed with a full-vector beam propagation method and a full-vector finite element method, and the simulation results are consistent with experiment results. The sensitivity of this fiber sensor is as high as 0.09 nm/°C when operating from room temperature to 1000 °C, and the fringe contrast keeps stable and clear. It is obvious that this all fiber sensor will have great application prospects in fiber sensing with the advantages of a compact structure, high sensitivity, and cost-effectiveness.

  16. Bandgap Engineering of 1300 nm Quantum Dots/Quantum Well Nanostructures Based Devices

    KAUST Repository

    Alhashim, Hala H.

    2016-05-29

    The main objectives of this thesis are to develop viable process and/or device technologies for bandgap tuning of 1300-nm InGaAs/GaAs quantum-dot (QD) laser structures, and broad linewidth 1300-nm InGaAsP/InP quantum well (QW) superluminescent diode structures. The high performance bandgap-engineered QD laser structures were achieved by employing quantum-dot intermixing (QDI) based on impurity free vacancy diffusion (IFVD) technique for eventual seamless active-passive integration, and bandgap-tuned lasers. QDI using various dielectric-capping materials, such as HfO2, SrTiO3, TiO2, Al2O3 and ZnO, etc, were experimented in which the resultant emission wavelength can be blueshifted to ∼ 1100 nm ─ 1200 nm range depending on process conditions. The significant results extracted from the PL characterization were used to perform an extensive laser characterization. The InAs/GaAs quantum-dot lasers with QDs transition energies were blueshifted by ~185 nm, and lasing around ~1070 – 1190 nm was achieved. Furthermore, from the spectral analysis, a simultaneous five-state lasing in the InAs/InGaAs intermixed QD laser was experimentally demonstrated for the first time in the very important wavelength range from 1030 to 1125 nm. The QDI methodology enabled the facile formation of a plethora of devices with various emission wavelengths suitable for a wide range of applications in the infrared. In addition, the wavelength range achieved is also applicable for coherent light generation in the green – yellow – orange visible wavelength band via frequency doubling, which is a cost-effective way of producing compact devices for pico-projectors, semiconductor laser based solid state lighting, etc. [1, 2] In QW-based superluminescent diode, the problem statement lies on achieving a flat-top and ultra-wide emission bandwidth. The approach was to design an inhomogeneous active region with a comparable simultaneous emission from different transition states in the QW stacks, in

  17. Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

    Science.gov (United States)

    Acharyya, Aritra; Banerjee, J. P.

    2014-01-01

    In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz-GaN) has been explored for operation at terahertz frequencies. Drift-diffusion model is used to design double-drift region (DDR) IMPATTs based on different materials at millimeter-wave (mm-wave) and terahertz (THz) frequencies. The performance limitations of these devices are studied from the avalanche response times at different mm-wave and THz frequencies. Results show that the upper cut-off frequency limits of GaAs and Si DDR IMPATTs are 220 GHz and 0.5 THz, respectively, whereas the same for InP and 4H-SiC DDR IMPATTs is 1.0 THz. Wz-GaN DDR IMPATTs are found to be excellent candidate for generation of RF power at THz frequencies of the order of 5.0 THz with appreciable DC to RF conversion efficiency. Further, it is observed that up to 1.0 THz, 4H-SiC DDR IMPATTs excel Wz-GaN DDR IMPATTs as regards their RF power outputs. Thus, the wide bandgap semiconductors such as Wz-GaN and 4H-SiC are highly suitable materials for DDR IMPATTs at both mm-wave and THz frequency ranges.

  18. Distributed optical fibre devices based on liquid crystal infiltrated photonic crystal fibers

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard; Broeng, Jes; Hermann, D.S.

    2004-01-01

    We describe a new class of hybrid photonic crystal fibers, which are liquid crystal infiltrated fibers. Using these fibers, we demonstrate 'distributed' tunable filter and switching functionalities operating by the photonic bandgap effect....

  19. Next Generation Solar Cells Based on Graded Bandgap Device Structures Utilising Rod-Type Nano-Materials

    Directory of Open Access Journals (Sweden)

    Imyhamy M. Dharmadasa

    2015-06-01

    Full Text Available Current solar cells under research and development utilise mainly one absorber layer limiting the photon harvesting capabilities. In order to develop next generation solar cells, research should move towards effective photon harvesting methods utilising low-cost solar energy materials. This will lead to reduce the $W−1 figure for direct solar energy conversion to electrical energy. In this work, a graded bandgap solar cell has been designed to absorb all photons from the UV, visible and IR regions. In addition, impurity PV effect and impact ionisation have been incorporated to enhance charge carrier creation within the same device. This new design has been experimentally tested using the most researched MOCVD grown GaAs/AlGaAs system, in order to confirm its validity. Devices with high Voc ~ 1175 mV and the highest possible FF ~ (0.85–0.87 have been produced, increasing the conversion efficiency to ~20% within only two growth runs. These devices were also experimentally tested for the existence of impurity PV effect and impact ionisation. The devices are PV active in complete darkness producing over 800 mV, Voc indicating the harvesting of IR radiation from the surroundings through impurity PV effect. The quantum efficiency measurements show over 140% signal confirming the contribution to PV action from impact ionisation. Since the concept is successfully proven, the low-cost and scalable electrodeposited semiconducting layers are used to produce graded bandgap solar cell structures. The utilisation of nano- and micro-rod type materials in graded bandgap devices are also presented and discussed in this paper. Preliminary work on glass/FTO/n-ZnS/n-CdS/n-CdTe/Au graded bandgap devices show 10%–12% efficient devices indicating extremely high Jsc values ~48 mA·cm−2, showing the high potential of these devices in achieving higher efficiencies. The detailed results on these low-cost and novel graded bandgap devices are presented in a separate

  20. SSPA's Using Reduced Conduction Angle Techniques on Wide-Bandgap Devices for Ultra High Efficiency Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A novel approach is proposed for very efficient, very reliable, low weight, wide-bandgap medium power SSPAs for Space applications operating at 400 MHz and 8GHz.

  1. NITINOL Interconnect Device for Optical Fiber Waveguides

    Science.gov (United States)

    1981-07-01

    LE EL,~NAVSEA REPORT NO. S27L~kV-NL 4P fNSWNC TR 81-129 1 JULY 1981 0 NITINOL INTERC&INECT DEVICE FOR OPTICAL FIBER WAVEGUIDES FINAL REPORT A...ACCESSION NO. 3. RECIPIENT’S CATALOG NUMBER NSWC TR 81-129I 1-19 -A )ci , ’ 4 TI TL E (and Sbtitle) S. TYPE OF REPORT & PERIOD COVERED NITINOL ... NITINOL Optical Fibers 20. ABSTRACT (Continue on reverse side if neceeewy and identify by block number) Two different interconnect devices for optical

  2. Photorefractive Polymer Fibers and Devices

    Science.gov (United States)

    2008-10-31

    Emission and Recoverable Photodegradation in a Robust Dye -Doped Polymer," Proc. SPIE 4798, 60-68 (2002). 21. J. J. Park, S. Bian, and M. G. Kuzyk, "Dynamics...be possible to make arrays of RGB fibers so that full color perception is possible. We have been using the photoisomerization mechanisms in azo- dyes to...azo- dye -doped polymer. The resulting decrease in the refractive index yields beam spreading. Beam defocusing in DRI/PMMA thick sample 647 nm We have

  3. Management of the high-order mode content in large (40 microm) core photonic bandgap Bragg fiber laser.

    Science.gov (United States)

    Gaponov, D A; Février, S; Devautour, M; Roy, P; Likhachev, M E; Aleshkina, S S; Salganskii, M Y; Yashkov, M V; Guryanov, A N

    2010-07-01

    Very large-mode-area Yb(3+)-doped single-mode photonic bandgap (PBG) Bragg fiber oscillators are considered. The transverse hole-burning effect is numerically modeled, which helps properly design the PBG cladding and the Yb(3+)-doped region for the high-order mode content to be carefully controlled. A ratio of the Yb(3+)-doped region diameter to the overall core diameter of 40% allows for single-mode emission, even for small spool diameters of 15 cm. Such a fiber was manufactured and subsequently used as the core element of a cw oscillator. Very good beam quality parameter M(2)=1.12 and slope efficiency of 80% were measured. Insensitivity to bending, exemplified by the absence of temporal drift of the beam, was demonstrated for curvature diameter as small as 15 cm.

  4. Wide bandgap n-type and p-type semiconductor porous junction devices as photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yuan-Pai; Horng, Sheng-Fu [Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Chao, Yu-Chiang; Meng, Hsin-Fei [Institute of Physics, National Chiao Tung University, Hsinchu 300, Taiwan (China); Zan, Hsiao-Wen, E-mail: yuchiangchao@gmail.com, E-mail: meng@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

    2011-10-12

    In junction absorber photovoltaics doped wide bandgap n-type and p-type semiconductors form a porous interpenetrating junction structure with a layer of low bandgap absorber at the interface. The doping concentration is high enough such that the junction depletion width is smaller than the pore size. The highly conductive neutral region then has a dentrite shape with fingers reaching the absorber to effectively collect the photo-carriers swept out by the junction electric field. With doping of 10{sup 19} cm{sup -3} corresponding to a depletion width of 25 nm, pore size of 32 nm, absorber thickness close to exciton diffusion length of 17 nm, absorber bandgap of 1.4 eV and carrier mobility over 10{sup -5} cm{sup 2} V{sup -1} s{sup -1}, numerical calculation shows the power conversion efficiency is as high as 19.4%. It rises to 23% for a triplet exciton absorber.

  5. A new modality for minimally invasive CO2 laser surgery: flexible hollow-core photonic bandgap fibers.

    Science.gov (United States)

    Shurgalin, Max; Anastassiou, Charalambos

    2008-01-01

    Carbon dioxide (CO2) lasers have become one of the most common surgical lasers due to excellent tissue interaction properties that offer precise control of cutting and ablation depth, minimal thermal damage to surrounding tissue, and good hemostasis. However, realization of the benefits offered by using surgical CO2 lasers in many endoscopic, minimally invasive surgical procedures has been inhibited by the absence of reliable, flexible fiber laser beam delivery systems. Recently, novel hollow-core photonic bandgap optical fibers for CO2 lasers were developed that offer high flexibility and mechanical robustness with good optical performance under tight bends. These fibers can be used through rigid and flexible endoscopes and various handpieces and will allow surgeons to perform delicate and precise laser surgery procedures in a minimally invasive manner. This paper describes the basic design of laser beam delivery system, different surgical fiber designs and their characteristics, and usage with existing surgical CO2 laser models. A few examples of successful CO2 laser surgeries performed with these fibers are presented.

  6. In-line Mach-Zehnder interferometer composed of microtaper and long-period grating in all-solid photonic bandgap fiber

    Energy Technology Data Exchange (ETDEWEB)

    Wu Zhifang [Key Laboratory of Optical Information and Technology, Ministry of Education and Institute of Modern Optics, Nankai University, Tianjin 300071 (China); OPTIMUS, School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637553 (Singapore); Liu Yange; Wang Zhi; Han Tingting; Li Shuo [Key Laboratory of Optical Information and Technology, Ministry of Education and Institute of Modern Optics, Nankai University, Tianjin 300071 (China); Jiang Meng; Ping Shum, Perry [OPTIMUS, School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637553 (Singapore); CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore 637553 (Singapore); Quyen Dinh, Xuan [CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore 637553 (Singapore); Thales Solutions Asia Pte Ltd, R and T Department, 28 Changi North Rise, Singapore 498755 (Singapore)

    2012-10-01

    We report a compact in-line Mach-Zehnder interferometer combining a microtaper with a long-period grating (LPG) in a section of all-solid photonic bandgap fiber. Theoretical and experimental investigations reveal that the interferometer works from the interference between the fundamental core mode and the LP{sub 01} cladding supermodes. The mechanism underlying the mode coupling caused by the microtaper can be attributed to a bandgap-shifting as the fiber diameter is abruptly scaled down. In addition, the interferometer designed to strengthen the coupling ratio of the long-period grating has a promising practical application in the simultaneous measurement of curvature and temperature.

  7. Temperature dependence of beat-length and confinement loss in an air-core photonic band-gap fiber

    Science.gov (United States)

    Xu, Zhenlong; Li, Xuyou; Hong, Yong; Liu, Pan; Yang, Hanrui; Ling, Weiwei

    2016-05-01

    The temperature dependence of polarization-maintaining (PM) property and loss in a highly-birefringent air-core photonic band-gap fiber (PBF) is investigated. The effects of temperature variation on the effective index, beat-length and confinement loss are studied numerically by using the full-vector finite element method (FEM). It is found that, the PM property of this PBF is insensitive to the temperature, and the temperature-dependent beat-length coefficient can be as low as 2.86×10-8 m/°C, which is typically 200 times less than those of conventional panda fibers, the PBF has a stable confinement loss of 0.01 dB/m over the temperature range of -30 to 20 °C for the slow axis at the wavelength of 1.55 μm. The PBF with ultra-low temperature-dependent PM property and low loss can reduce the thermally induced polarization instability apparently in interferometric applications such as resonant fiber optic gyroscope (RFOG), optical fiber sensors, and so on.

  8. Optical Measurement Techniques for Optical Fiber and Waveguide Devices

    Institute of Scientific and Technical Information of China (English)

    D.Y.; Kim; Y.; Park; N.H.; Seong; Y.C.Youk; J.Y.; Lee; S.; Moon; I.H.; Shin; H.S.; Ryu

    2003-01-01

    We describe three major optical characterization methods for fiber and fiber devices. A simple servo controlled scanning fiber-optic confocal microscope is proposed for determining the refractive index profile of an optical fiber. To measure the chromatic dispersion of a short length fiber a Mach-Zehnder fiber interferometer with a novel interferometric distance meter is introduced. At the end, a tomographic method is demonstrated for determining the 2-D stress profile of a fiber.

  9. Fabrication and characterization of porous-core honeycomb bandgap THz fibers

    DEFF Research Database (Denmark)

    Bao, Hualong; Nielsen, Kristian; Rasmussen, Henrik K.

    the frequency range 0.1 to 2 THz, and numerous sharp resonant features are visible in the core power ratio, indicative of resonant coupling between the reflected field from the outer interface of the fiber and the core mode. The fiber is experimentally characterized with a commercial fiber-coupled THz...... below approximately 0.6 THz are attenuated by adding a layer of water on the outside of the fiber surface, while the transmission in the two band gaps in the 0.7-1.1 THz and 1.3-1.7 THz regions are unaffected by the water, This observation demonstrates that the absorptive water layer effectively strips...

  10. Single-mode ytterbium-doped large-mode-area photonic bandgap rod fiber amplifier

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard; Scolari, Lara; Broeng, Jes;

    2011-01-01

    Enabling Single-Mode (SM) operation in Large-Mode-Area (LMA) fiber amplifiers and lasers is critical, since a SM output ensures high beam quality and excellent pointing stability. In this paper, we demonstrate and test a new design approach for achieving SM LMA rod fibers by using a photonic...

  11. High temperature performance of Wide Bandgap Semiconductors Devices for High Power Applications

    OpenAIRE

    2010-01-01

    Wide bandgap III-Nitride semiconductor materials possess superior properties as compared to silicon and other IIIV compound materials. GaN has recently attracted a lot of interest for applications in high power electronics capable of operation at elevated temperatures. Modeling of the drift region properties of GaN Schottky rectifiers and power MOSFET to achieve breakdown voltages ranging from 200 to 5kV is presented. 1kV and 3kV Schottky rectifiers are simulated and the characteristics of th...

  12. Considerations of dopant-dependent bandgap narrowing for accurate device simulation in abrupt HBTs

    Institute of Scientific and Technical Information of China (English)

    Zhou Shouli; Xiong Deping; Qin Yali

    2009-01-01

    Heavy doping of the base in HBTs brings about a bandgap narrowing(BGN)effect,which modifies the intrinsic carrier density and disturbs the band offset,and thus leads to the change of the currents.Based on a thermionic-field-diffusion model that is used to the analyze the performance of all abrupt HBT with a heavydoped base,the conclusion is made that,although the BGN effect makes the currents obviously change due to the modification of the intrinsic carrier density,the band offsets disturbed by the BGN effect should also be taken into account in the analysis of the electrical characteristics of abrupt HBTs.In addition,the BGN effect changes the bias voltage for the onset of Kirk effects.

  13. Very-large-mode-area photonic bandgap Bragg fiber polarizing in a wide spectral range.

    Science.gov (United States)

    Aleshkina, Svetlana S; Likhachev, Mikhail E; Pryamikov, Andrey D; Gaponov, Dmitry A; Denisov, Alexandr N; Bubnov, Mikhail M; Salganskii, Mikhail Yu; Laptev, Alexandr Yu; Guryanov, Aleksei N; Uspenskii, Yurii A; Popov, Nikolay L; Février, Sébastien

    2011-09-15

    A design of a polarizing all-glass Bragg fiber with a microstructure core has been proposed for the first time. This design provides suppression of high-order modes and of one of the polarization states of the fundamental mode. The polarizing fiber was fabricated by a new, simple method based on a combination of the modified chemical vapor deposition (MCVD) process and the rod-in-tube technique. The mode field area has been found to be about 870 μm² near λ=1064 nm. The polarization extinction ratio better than 13 dB has been observed over a 33% wavelength range (from 1 to 1.4 μm) after propagation in a 1.7 m fiber piece bent to a radius of 70 cm.

  14. A novel electro-thermal model for wide bandgap semiconductor based devices

    DEFF Research Database (Denmark)

    Sintamarean, Nicolae Christian; Blaabjerg, Frede; Wang, Huai

    2013-01-01

    This paper propose a novel Electro-Thermal Model for the new generation of power electronics WBG-devices (by considering the SiC MOSFET-CMF20120D from CREE), which is able to estimate the device junction and case temperature. The Device-Model estimates the voltage drop and the switching energies...... by considering the device current, the off-state blocking voltage and junction temperature variation. Moreover, the proposed Thermal-Model is able to consider the thermal coupling within the MOSFET and its freewheeling diode, integrated into the same package, and the influence of the ambient temperature...... variation. The importance of temperature loop feedback in the estimation accuracy of device junction and case temperature is studied. Furthermore, the Safe Operating Area (SOA) of the SiC MOSFET is determined for 2L-VSI applications which are using sinusoidal PWM. Thus, by considering the heatsink thermal...

  15. Design of single-polarization coupler based on dual-core photonic band-gap fiber implied in resonant fiber optic gyro

    Science.gov (United States)

    Xu, Zhenlong; Li, Xuyou; Zhang, Chunmei; Ling, Weiwei; Liu, Pan; Xia, Linlin; Yang, Hanrui

    2016-12-01

    A novel (to our knowledge) type of single-polarization (SP) coupler based on a dual-core photonic band-gap fiber (PBF) is proposed. The effects of structure parameters on the performance of this coupler are studied numerically based on the full vector finite element method (FEM). Finally, an optimal design with a length of 0.377 mm at the wavelength of 1.55 μm is achieved, and its implication in PBF-based fiber ring resonator (FRR), the effect of angular misalignment on the SP coupler are analyzed as well. When the SP coupler is incorporated into a PBF-based FRR, it functions as the power splitter and the polarizer simultaneously, and can extinct the secondary eigenstate of polarization (ESOP) propagating in the FRR. The mode field of SP coupler can match with the polarization-maintaining (PM) PBF with ultra-low temperature sensitivity proposed in previous study, and an all PM-PBF based FRR can be established, which is of great significance in suppressing the temperature-related polarization fluctuation and improving the long-term stability for RFOG, and the SP coupler has high angular misalignment tolerance as well.

  16. Fiber field-effect device via in situ channel crystallization.

    Science.gov (United States)

    Danto, Sylvain; Sorin, Fabien; Orf, Nicholas D; Wang, Zheng; Speakman, Scott A; Joannopoulos, John D; Fink, Yoel

    2010-10-01

    The in situ crystallization of the incorporated amorphous semiconductor within the multimaterial fiber device yields a large decrease in defect density and a concomitant five-order-of-magnitude decrease in resistivity of the novel metal-insulator-crystalline semiconductor structure. Using a post-drawing crystallization process, the first tens-of-meters-long single-fiber field-effect device is demonstrated. This work opens significant opportunities for incorporating higher functionality in functional fibers and fabrics.

  17. Screening of inorganic wide-bandgap p-type semiconductors for high performance hole transport layers in organic photovoltaic devices

    Science.gov (United States)

    Ginley, David; Zakutayev, Andriy; Garcia, Andreas; Widjonarko, Nicodemus; Ndione, Paul; Sigdel, Ajaya; Parilla, Phillip; Olson, Dana; Perkins, John; Berry, Joseph

    2011-03-01

    We will report on the development of novel inorganic hole transport layers (HTL) for organic photovoltaics (OPV). All the studied materials belong to the general class of wide-bandgap p-type oxide semiconductors. Potential candidates suitable for HTL applications include SnO, NiO, Cu2O (and related CuAlO2, CuCrO2, SrCu2O4 etc) and Co3O4 (and related ZnCo2O4, NiCo2O4, MgCo2O4 etc.). Materials have been optimized by high-throughput combinatorial approaches. The thin films were deposited by RF sputtering and pulsed laser deposition at ambient and elevated temperatures. Performance of the inorganic HTLs and that of the reference organic PEDOT:PSS HTL were compared by measuring the power conversion efficiencies and spectral responses of the P3HT/PCBM- and PCDTBT/PCBM-based OPV devices. Preliminary results indicate that Co3O4-based HTLs have performance comparable to that of our previously reported NiOs and PEDOT:PSS HTLs, leading to a power conversion efficiency of about 4 percent. The effect of composition and work function of the ternary materials on their performance in OPV devices is under investigation.

  18. Photonic crystal fibers, devices, and applications

    Institute of Scientific and Technical Information of China (English)

    Wei JIN; Jian JU; Hoi Lut HO; Yeuk Lai HOO; Ailing ZHANG

    2013-01-01

    This paper reviews different types of air-silica photonic crystal fibers (PCFs), discusses their novel properties, and reports recent advances in PCF components and sensors as well as techniques for splicing PCFs to standard telecomm fibers.

  19. High Efficiency Three-phase Power Factor Correction Rectifier using Wide Band-Gap Devices

    DEFF Research Database (Denmark)

    Kouchaki, Alireza

    2016-01-01

    Improving the conversion efficiency of power factor correction (PFC) rectifiers has become compelling due to their wide applications such as adjustable speed drives, uninterruptible power supplies (UPS), and battery chargers for electric vehicles (EVs). The attention to PFCs has increased even more...... design that has lower parasitic elements. To fulfill the grid regulations (e.g. IEEE-519) high order filters are normally used. Achieving an optimum filter design is vital for having an efficient converter. Reducing low frequency harmonics can improve both the efficiency and also the power quality...... hardware design using WBG devices to improve the conversion efficiency and 2) Identifying the impact on the efficiency by current controller. Part 1 is presented in Chapter ‎3. The converter topology is a two-level bidirectional boost voltage source converter (VSC). SiC devices (i.e. MOSFET and diode...

  20. High Efficiency Three-phase Power Factor Correction Rectifier using Wide Band-Gap Devices

    DEFF Research Database (Denmark)

    Kouchaki, Alireza

    2016-01-01

    Improving the conversion efficiency of power factor correction (PFC) rectifiers has become compelling due to their wide applications such as adjustable speed drives, uninterruptible power supplies (UPS), and battery chargers for electric vehicles (EVs). The attention to PFCs has increased even more...... power devices. Therefore, the PFC switching frequency using WBG devices can potentially be increased. This advantage helps the reactive components to be reduced in size. However, it also brings challenges such as identifying a proper material for inductive components that has lower loss and layout....... Therefore, current controllers are also important to be investigated in this project. In this PhD research work, a comprehensive design of a two-level three-phase PFC rectifier using silicon-carbide (SiC) switches to achieve high efficiency is presented. The work is divided into two main parts: 1) Optimum...

  1. Optical fiber-based devices and applications

    Institute of Scientific and Technical Information of China (English)

    Perry Ping SHUM; Jonathan C. KNIGHT; Jesper LAEGSGAARD; Dora Juan Juan HU

    2010-01-01

    @@ Optical fiber technology has undergone tremendous growth and development over the last 40 years. Optical fibers constitute an information super highway and are vital in enabling the proliferating use of the Internet. Optical fiber is also an enabling technology which can find applications in sensing, imaging, biomedical, machining, etc. There have been a few milestones in the advancement of optical fiber technology. Firstly, the invention and development of the laser some 50 years ago made optical communications possible. Secondly, the fabrication of low-loss optical fibers has been a key element to the success of optical communication.

  2. Electrochromic devices based on wide band-gap nanocrystalline semiconductors functionalized with mononuclear charge transfer compounds

    DEFF Research Database (Denmark)

    Biancardo, M.; Argazzi, R.; Bignozzi, C.A.

    2006-01-01

    A series of ruthenium and iron mononuclear complexes were prepared and their spectroeletrochemical behavior characterized oil Optically Transparent Thin Layer Electrodes (OTTLE) and on Fluorine Doped SnO2 (FTO) conductive glasses coated with Sb-doped nanocrystalline SnO2. These systems display...... a reversible electrochemical response and offer potential application in electrochromic devices. On SnO2 films distinct spectral changes are observed in a narrow potential range (-0.5/0.9 V vs SCE) with switching times of the order of 0.8 s. (c) 2005 Elsevier B.V. All rights reserved....

  3. Investigation of High-Nonlinearity Glass Fibers for Potential Applications in Ultrafast Nonlinear Fiber Devices

    OpenAIRE

    Kim, Jong-Kook

    2005-01-01

    Nonlinear fiber devices have been attracting considerable attention in recent years, due to their inherent ultrafast response time and potential applications in optical communication systems. They usually require long fibers to generate sufficient nonlinear phase shifts, since nonlinearities of conventional silica-core silica-clad fibers are too low. These long devices, however, cause the serious problems of pulse walk-off, pulse broadening, and polarization fluctuation which are major limiti...

  4. Infiltrated microstructured fibers as tunable and nonlinear optical devices

    DEFF Research Database (Denmark)

    Rosberg, Christian Romer; Bennet, Francis; Neshev, Dragomir N.;

    We study the light guiding properties of microstructured optical fibers infiltrated with nonlinear liquids and demonstrate their applicability for spatial beam control in novel type tunable and nonlinear optical devices....

  5. Carbon-Nanotube Fibers for Wearable Devices and Smart Textiles.

    Science.gov (United States)

    Di, Jiangtao; Zhang, Xiaohua; Yong, Zhenzhong; Zhang, Yongyi; Li, Da; Li, Ru; Li, Qingwen

    2016-12-01

    Carbon-nanotube (CNT) fibers integrate such properties as high mechanical strength, extraordinary structural flexibility, high thermal and electrical conductivities, novel corrosion and oxidation resistivities, and high surface area, which makes them a very promising candidate for next-generation smart textiles and wearable devices. A brief review of the preparation of CNT fibers and recently developed CNT-fiber-based flexible and functional devices, which include artificial muscles, electrochemical double-layer capacitors, lithium-ion batteries, solar cells, and memristors, is presented.

  6. Fiber-shaped energy harvesting and storage devices

    CERN Document Server

    Peng, Huisheng

    2015-01-01

    This comprehensive book covers flexible fiber-shaped devices in the area of energy conversion and storage. The first part of the book introduces recently developed materials, particularly, various nanomaterials and composite materials based on nanostructured carbon such as carbon nanotubes and graphene, metals and polymers for the construction of fiber electrodes. The second part of the book focuses on two typical twisted and coaxial architectures of fiber-shaped devices for energy conversion and storage. The emphasis is placed on dye-sensitized solar cells, polymer solar cells, lithium-ion b

  7. A 5-mm piezo-scanning fiber device for high speed ultrafast laser microsurgery.

    Science.gov (United States)

    Ferhanoglu, Onur; Yildirim, Murat; Subramanian, Kaushik; Ben-Yakar, Adela

    2014-07-01

    Towards developing precise microsurgery tools for the clinic, we previously developed image-guided miniaturized devices using low repetition rate amplified ultrafast lasers for surgery. To improve the speed of tissue removal while reducing device diameter, here we present a new 5-mm diameter device that delivers high-repetition rate laser pulses for high speed ultrafast laser microsurgery. The device consists of an air-core photonic bandgap fiber (PBF) for the delivery of high energy pulses, a piezoelectric tube actuator for fiber scanning, and two aspheric lenses for focusing the light. Its inline optical architecture provides easy alignment and substantial size reduction to 5 mm diameter as compared to our previous MEMS-scanning devices while realizing improved intensity squared (two-photon) lateral and axial resolutions of 1.16 μm and 11.46 μm, respectively. Our study also sheds light on the maximum pulse energies that can be delivered through the air-core PBF and identifies cladding damage at the input facet of the fiber as the limiting factor. We have achieved a maximum energy delivery larger than 700 nJ at 92% coupling efficiency. An in depth analysis reveals how this value is greatly affected by possible slight misalignments of the beam during coupling and the measured small beam pointing fluctuations. In the absence of these imperfections, self-phase modulation becomes the limiting factor for the maximum energy delivery, setting the theoretical upper bound to near 2 μJ for a 1-m long, 7-μm, air-core PBF. Finally, the use of a 300 kHz repetition rate fiber laser enabled rapid ablation of 150 µm x 150 µm area within only 50 ms. Such ablation speeds can now allow the surgeons to translate the surgery device as fast as ~4 mm/s to continuously remove a thin layer of a 150 µm wide tissue. Thanks to a high optical transmission efficiency of the in-line optical architecture of the device and improved resolution, we could successfully perform ablation of

  8. Development of Thermoelectric Fibers for Miniature Thermoelectric Devices

    Science.gov (United States)

    Ren, Fei; Menchhofer, Paul; Kiggans, James; Wang, Hsin

    2016-03-01

    Miniature thermoelectric (TE) devices may be used in a variety of applications such as power sources of small sensors, temperature regulation of precision electronics, etc. Reducing the size of TE elements may also enable design of novel devices with unique form factor and higher device efficiency. Current industrial practice of fabricating TE devices usually involves mechanical removal processes that not only lead to material loss but also limit the geometry of the TE elements. In this project, we explored a powder-processing method for the fabrication of TE fibers with large length-to-area ratio, which could be potentially used for miniature TE devices. Powders were milled from Bi2Te3-based bulk materials and then mixed with a thermoplastic resin dissolved in an organic solvent. Through an extrusion process, flexible, continuous fibers with sub-millimeter diameters were formed. The polymer phase was then removed by sintering. Sintered fibers exhibited similar Seebeck coefficients to the bulk materials. However, their electrical resistivity was much higher, which might be related to the residual porosity and grain boundary contamination. Prototype miniature uni-couples fabricated from these fibers showed a linear I- V behavior and could generate millivolt voltages and output power in the nano-watt range. Further development of these TE fibers requires improvement in their electrical conductivities, which needs a better understanding of the causes that lead to the low conductivity in the sintered fibers.

  9. Silica optical fiber technology for devices and components design, fabrication, and international standards

    CERN Document Server

    Oh, Kyunghwan

    2012-01-01

    From basic physics to new products, Silica Optical Fiber Technology for Device and Components examines all aspects of specialty optical fibers. Moreover, the inclusion of the latest international standards governing optical fibers enables you to move from research to fabrication to commercialization. Reviews all the latest specialty optical fiber technologies, including those developed for high capacity WDM applications; broadband fiber amplifiers; fiber filleters based on periodic coupling; fiber branching devices; and fiber terminations Discusses key differences among sing

  10. Use of fiber helical coils to obtain polarization insensitive fiber devices

    Science.gov (United States)

    Tentori, Diana; Garcia-Weidner, A.; Rodriguez-Garcia, J. A.

    2016-09-01

    Using a new model for the description of the birefringence of a helical coil, it is shown that the birefringence effect on the signal polarization introduced by a fiber device can be canceled out by introducing two helical coils at the required orientation. Experimental results obtained using this modification in a polarization insensitive device (optical isolator) and in a non-polarization insensitive device working at two different wavelengths (wavelength division multiplexer) are presented and discussed. Such modified devices were used in the construction of an erbium-doped fiber amplifier (EDFA) with a full control of the input signal and pump states of polarization.

  11. Mechanical Deformation of Sintered Porous Ag Die Attach at High Temperature and Its Size Effect for Wide-Bandgap Power Device Design

    Science.gov (United States)

    Chen, Chuantong; Nagao, Shijo; Zhang, Hao; Jiu, Jinting; Sugahara, Tohru; Suganuma, Katsuaki; Iwashige, Tomohito; Sugiura, Kazuhiko; Tsuruta, Kazuhiro

    2016-12-01

    The mechanical properties of sintered Ag paste with microporous structure have been investigated by tensile and shear tests, focusing on the temperature-dependent plastic deformation at various temperatures from 25°C to 300°C, corresponding to the target operating temperature range of emerging wide-bandgap semiconductor devices. Specimens were prepared by sintering hybrid Ag paste consisting of microflake and submicron spherical Ag particles, simulating a typical bonding process for power semiconductor die attach. Mechanical tests revealed that the unique microstructure caused a brittle-to-ductile transition at temperature of around 160°C, remarkably lower than that of bulk Ag. The obtained Young's modulus and shear modulus values indicate obvious softening with increasing temperature, together with a remarkable decrease in Poisson's ratio. These plastic behaviors at elevated temperature can be explained based on Coble creep in the microporous network structure. Fracture surfaces after tensile and shear tests indicated unique features on scanning electron microscopy, reflecting the variation in the ductile behavior with the test temperature. Furthermore, these temperature-dependent mechanical parameters were employed in three-dimensional finite-element analysis of the thermomechanical stress distribution in wide-bandgap semiconductor module structures including Ag paste die attach of different sizes. Detailed thermal stress analysis enabled precise evaluation of the packaging design for wide-bandgap semiconductor modules for use in high-temperature applications.

  12. Mechanical Deformation of Sintered Porous Ag Die Attach at High Temperature and Its Size Effect for Wide-Bandgap Power Device Design

    Science.gov (United States)

    Chen, Chuantong; Nagao, Shijo; Zhang, Hao; Jiu, Jinting; Sugahara, Tohru; Suganuma, Katsuaki; Iwashige, Tomohito; Sugiura, Kazuhiko; Tsuruta, Kazuhiro

    2017-03-01

    The mechanical properties of sintered Ag paste with microporous structure have been investigated by tensile and shear tests, focusing on the temperature-dependent plastic deformation at various temperatures from 25°C to 300°C, corresponding to the target operating temperature range of emerging wide-bandgap semiconductor devices. Specimens were prepared by sintering hybrid Ag paste consisting of microflake and submicron spherical Ag particles, simulating a typical bonding process for power semiconductor die attach. Mechanical tests revealed that the unique microstructure caused a brittle-to-ductile transition at temperature of around 160°C, remarkably lower than that of bulk Ag. The obtained Young's modulus and shear modulus values indicate obvious softening with increasing temperature, together with a remarkable decrease in Poisson's ratio. These plastic behaviors at elevated temperature can be explained based on Coble creep in the microporous network structure. Fracture surfaces after tensile and shear tests indicated unique features on scanning electron microscopy, reflecting the variation in the ductile behavior with the test temperature. Furthermore, these temperature-dependent mechanical parameters were employed in three-dimensional finite-element analysis of the thermomechanical stress distribution in wide-bandgap semiconductor module structures including Ag paste die attach of different sizes. Detailed thermal stress analysis enabled precise evaluation of the packaging design for wide-bandgap semiconductor modules for use in high-temperature applications.

  13. Influences of the non-covalent interaction strength on reaching high solid-state order and device performance of a low bandgap polymer with axisymmetrical structural units.

    Science.gov (United States)

    Jheng, Jyun-Fong; Lai, Yu-Ying; Wu, Jhong-Sian; Chao, Yi-Hsiang; Wang, Chien-Lung; Hsu, Chain-Shu

    2013-05-07

    A high organic field-effect transistor mobility (0.29 cm(2) V(-1) s(-1) ) and bulk-heterojunction polymer solar cell performance (PCE of 6.82%) have been achieved in a low bandgap alternating copolymer consisting of axisymmetrical structural units, 5,6-difluorobenzo-2,1,3-thiadiazole. Introducing the fluorine substituents enhanced intermolecular interaction and improved the solid-state order, which consequently resulted in the highest device performances among the 2,1,3-thiadiazole-quarterthiophene based alternating copolymers.

  14. Multiple resonant coupling mechanism for suppression of higher-order modes in all-solid photonic bandgap fibers with heterostructured cladding.

    Science.gov (United States)

    Murao, Tadashi; Saitoh, Kunimasa; Koshiba, Masanori

    2011-01-31

    In this paper, we propose a novel mechanism for suppression of higher-order modes (HOMs), namely multiple resonant coupling, in all-solid photonic bandgap fibers (PBGFs) with effectively large core diameters. In an analogy to the well-known tight-binding theory in solid-state physics, multiple anti-resonant reflecting optical waveguide (ARROW) modes bound in designedly arranged defects in the cladding make up Bloch states and resultant photonic bands with a finite effective-index width, which contribute to the suppression of HOMs. In particular, contrary to the conventional method for the HOM suppression using the index-matching of the HOMs in the core of the PBGF and the defect mode arranged in the cladding, the proposed mechanism guarantees a broadband HOM suppression without a precise structural design. This effect is explained by the multiple resonant coupling, as well as an enhanced confinement loss mechanism which occurs near the condition satisfying the multiple resonant coupling. Moreover, we show that the proposed structure exhibits a lower bending loss characteristic when compared to the conventional all-solid PBGFs. The simultaneous realization of the single-mode operation and the low bending loss property is due to the novel cladding concept named as heterostructured cladding. The proposed structure also resolves the issue for the increased confinement loss property in the first-order photonic bandgap (PBG) at the same time.

  15. An in-fiber integrated optofluidic device based on an optical fiber with an inner core.

    Science.gov (United States)

    Yang, Xinghua; Yuan, Tingting; Teng, Pingping; Kong, Depeng; Liu, Chunlan; Li, Entao; Zhao, Enming; Tong, Chengguo; Yuan, Libo

    2014-06-21

    A new kind of optofluidic in-fiber integrated device based on a specially designed hollow optical fiber with an inner core is designed. The inlets and outlets are built by etching the surface of the optical fiber without damaging the inner core. A reaction region between the end of the fiber and a solid point obtained after melting is constructed. By injecting samples into the fiber, the liquids can form steady microflows and react in the region. Simultaneously, the emission from the chemiluminescence reaction can be detected from the remote end of the optical fiber through evanescent field coupling. The concentration of ascorbic acid (AA or vitamin C, Vc) is determined by the emission intensity of the reaction of Vc, H2O2, luminol, and K3Fe(CN)6 in the optical fiber. A linear sensing range of 0.1-3.0 mmol L(-1) for Vc is obtained. The emission intensity can be determined within 2 s at a total flow rate of 150 μL min(-1). Significantly, this work presents information for the in-fiber integrated optofluidic devices without spatial optical coupling.

  16. Cold fiber solid-phase microextraction device based on thermoelectric cooling of metal fiber.

    Science.gov (United States)

    Haddadi, Shokouh Hosseinzadeh; Pawliszyn, Janusz

    2009-04-03

    A new cold fiber solid-phase microextraction device was designed and constructed based on thermoelectric cooling. A three-stage thermoelectric cooler (TEC) was used for cooling a copper rod coated with a poly(dimethylsiloxane) (PDMS) hollow fiber, which served as the solid-phase microextraction (SPME) fiber. The copper rod was mounted on a commercial SPME plunger and exposed to the cold surface of the TEC, which was enclosed in a small aluminum box. A heat sink and a fan were used to dissipate the generated heat at the hot side of the TEC. By applying an appropriate dc voltage to the TEC, the upper part of the copper rod, which was in contact to the cold side of the TEC, was cooled and the hollow fiber reached a lower temperature through heat transfer. A thermocouple was embedded in the cold side of the TEC for indirect measurement of the fiber temperature. The device was applied in quantitative analysis of off-flavors in a rice sample. Hexanal, nonanal, and undecanal were chosen as three off-flavors in rice. They were identified according to their retention times and analyzed by GC-flame ionization detection instrument. Headspace extraction conditions (i.e., temperature and time) were optimized. Standard addition calibration graphs were obtained at the optimized conditions and the concentrations of the three analytes were calculated. The concentration of hexanal was also measured using a conventional solvent extraction method (697+/-143ng/g) which was comparable to that obtained from the cold fiber SPME method (644+/-8). Moreover, the cold fiber SPME resulted in better reproducibility and shorter analysis time. Cold fiber SPME with TEC device can also be used as a portable device for field sampling.

  17. 77 FR 65713 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Science.gov (United States)

    2012-10-30

    ... COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products... Singapore; and Avago Technologies U.S. Inc. of San Jose, California. Letters supplementing the complaint... the United States after importation of certain optoelectronic devices for fiber optic...

  18. Q-switching and efficient harmonic generation from a single-mode LMA photonic bandgap rod fiber laser

    DEFF Research Database (Denmark)

    Laurila, Marko; Saby, Julien; Alkeskjold, Thomas T.;

    2011-01-01

    with a Mode-Field-Diameter (MFD) of 59 mu m. We further demonstrate high pulse energy Second-Harmonic-Generation (SHG) and Third Harmonic Generation (THG) using a simple Q-switched single-stage rod fiber laser cavity architecture reaching pulse energies up to 1mJ at 515nm and 0.5mJ at 343nm. (C) 2011 Optical......We demonstrate a Single-Mode (SM) Large-Mode-Area (LMA) ytterbium-doped PCF rod fiber laser with stable and close to diffraction limited beam quality with 110W output power. Distributed-Mode-Filtering (DMF) elements integrated in the cladding of the rod fiber provide a robust spatial mode...

  19. Q-switching and efficient harmonic generation from a single-mode LMA photonic bandgap rod fiber laser.

    Science.gov (United States)

    Laurila, Marko; Saby, Julien; Alkeskjold, Thomas T; Scolari, Lara; Cocquelin, Benjamin; Salin, Francois; Broeng, Jes; Lægsgaard, Jesper

    2011-05-23

    We demonstrate a Single-Mode (SM) Large-Mode-Area (LMA) ytterbium-doped PCF rod fiber laser with stable and close to diffraction limited beam quality with 110W output power. Distributed-Mode-Filtering (DMF) elements integrated in the cladding of the rod fiber provide a robust spatial mode with a Mode-Field-Diameter (MFD) of 59μm. We further demonstrate high pulse energy Second-Harmonic-Generation (SHG) and Third Harmonic Generation (THG) using a simple Q-switched single-stage rod fiber laser cavity architecture reaching pulse energies up to 1mJ at 515nm and 0.5mJ at 343nm.

  20. Lab-on-fiber electrophoretic trace mixture separating and detecting an optofluidic device based on a microstructured optical fiber.

    Science.gov (United States)

    Yang, Xinghua; Guo, Xiaohui; Li, Song; Kong, Depeng; Liu, Zhihai; Yang, Jun; Yuan, Libo

    2016-04-15

    We report an in-fiber integrated electrophoretic trace mixture separating and detecting an optofluidic optical fiber sensor based on a specially designed optical fiber. In this design, rapid in situ separation and simultaneous detection of mixed analytes can be realized under electro-osmotic flow in the microstructured optical fiber. To visually display the in-fiber separating and detecting process, two common fluorescent indicators are adopted as the optofluidic analytes in the optical fiber. Results show that a trace amount of the mixture (0.15 μL) can be completely separated within 3.5 min under a high voltage of 5 kV. Simultaneously, the distributed information of the separated analytes in the optical fiber can be clearly obtained by scanning along the optical fiber using a 355 nm laser. The emission from the analytes can be efficiently coupled into the inner core and guides to the remote end of the optical fiber. In addition, the thin cladding around the inner core in the optical fiber can prevent the fluorescent cross talk between the analytes in this design. Compared to previous optical fiber optofluidic devices, this device first realizes simultaneously separating treatment and the detection of the mixed samples in an optical fiber. Significantly, such an in-fiber integrated separating and detecting optofluidic device can find wide applications in various analysis fields involves mixed samples, such as biology, chemistry, and environment.

  1. 78 FR 16296 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Science.gov (United States)

    2013-03-14

    ... COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products... complaint filed by Avago Technologies Fiber IP (Singapore) Pte. Ltd. of Singapore (``Avago Fiber IP... importation, or sale within the United States after importation of certain optoelectronic devices for...

  2. Sol-gel processing to form doped sol-gel monoliths inside hollow core optical fiber and sol-gel core fiber devices made thereby

    Science.gov (United States)

    Shaw, Harry C. (Inventor); Ott, Melanie N. (Inventor); Manuel, Michele V. (Inventor)

    2002-01-01

    A process of fabricating a fiber device includes providing a hollow core fiber, and forming a sol-gel material inside the hollow core fiber. The hollow core fiber is preferably an optical fiber, and the sol-gel material is doped with a dopant. Devices made in this manner includes a wide variety of sensors.

  3. Identifying the Electronic Properties Relevant to Improving the Performance of High Band-Gap Copper Based I-III-VI2 Chalcopyrite Thin Film Photovoltaic Devices: Final Subcontract Report, 27 April 2004-15 September 2007

    Energy Technology Data Exchange (ETDEWEB)

    Cohen, J. D.

    2008-08-01

    This report summarizes the development and evaluation of higher-bandgap absorbers in the CIS alloy system. The major effort focused on exploring suitable absorbers with significant sulfur alloying in collaboration with Shafarman's group at the Institute of Energy Conversion. Three series of samples were examined; first, a series of quaternary CuIn(SeS)2-based devices without Ga; second, a series of devices with pentenary Cu(InGa)(SeS)2 absorbers in which the Se-to-S and In-to-Ga ratios were chosen to keep the bandgap nearly constant, near 1.52 eV. Third, based on the most-promising samples in those two series, we examined a series of devices with pentenary Cu(InGa)(SeS)2 absorbers with roughly 25 at.% S/(Se+S) ratios and varying Ga fractions. We also characterized electronic properties of several wide-bandgap CuGaSe2 devices from both IEC and NREL. The electronic properties of these absorbers were examined using admittance spectroscopy, drive-level capacitance profiling, transient photocapacitance, and transient photocurrent optical spectroscopies. The sample devices whose absorbers had Ga fraction below 40 at.% and S fractions above 20 at.% but below 40% exhibited the best electronic properties and device performance.

  4. Wide-Bandgap CIAS Thin-film Photovoltaics with Transparent Back Contacts for Next-Generation Single and Multijunction Devices

    Science.gov (United States)

    Woods, Lawrence M.; Kalla, Ajay; Gonzalez, Damian; Ribelin, Rosine

    2005-01-01

    Future spacecraft and high-altitude airship (HAA) technologies will require high array specific power (W/kg), which can be met using thin-film photovoltaics (PV) on lightweight and flexible substrates. It has been calculated that the thin-film array technology, including the array support structure, begins to exceed the specific power of crystalline multi-junction arrays when the thin-film device efficiencies begin to exceed 12%. Thin-film PV devices have other advantages in that they are more easily integrated into HAA s, and are projected to be much less costly than their crystalline PV counterparts. Furthermore, it is likely that only thin-film array technology will be able to meet device specific power requirements exceeding 1 kW/kg (photovoltaic and integrated substrate/blanket mass only). Of the various thin-film technologies, single junction and radiation resistant CuInSe2 (CIS) and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of thin-film device performance, with the best efficiency, reaching 19.2% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys could achieve the highest levels of thin-film space and HAA solar array performance.

  5. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

    2012-01-20

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  6. Suppressing sub-bandgap phonon-polariton heat transfer in near-field thermophotovoltaic devices for waste heat recovery

    Science.gov (United States)

    Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui

    2015-08-01

    We consider a near-field thermophotovoltaic device with metal as the emitter and semiconductor as the photovoltaic cell. We show that when the cell is a III-V semiconductor, such as GaSb, parasitic phonon-polariton heat transfer reduces efficiency in the near-field regime, especially when the temperature of the emitter is not high enough. We further propose ways to avoid the phonon-polariton heat transfer by replacing the III-V semiconductor with a non-polar semiconductor such as Ge. Our work provides practical guidance on the design of near-field thermophotovoltaic systems for efficient harvesting of low-quality waste heat.

  7. Two-Dimensional Fiber Positioning and Clamping Device for Product-Internal Microassembly

    NARCIS (Netherlands)

    Henneken, V.A.; Sassen, W.P.; Van der Vlist, W.; Wien, W.H.A.; Tichem, M.; Sarro, P.M.

    2008-01-01

    In this paper, we present a microelectromechanical systems-based two-degrees-of-freedom positioning device combined with a clamping structure for positioning and constraining an optical fiber. The fiber position can be controlled in the two directions perpendicular to the fiber axis using two specif

  8. Novel Crosstalk Measurement Method for Multi-Core Fiber Fan-In/Fan-Out Devices

    DEFF Research Database (Denmark)

    Ye, Feihong; Ono, Hirotaka; Abe, Yoshiteru;

    2016-01-01

    We propose a new crosstalk measurement method for multi-core fiber fan-in/fan-out devices utilizing the Fresnel reflection. Compared with the traditional method using core-to-core coupling between a multi-core fiber and a single-mode fiber, the proposed method has the advantages of high reliabili...

  9. Wide-Bandgap Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Chinthavali, M.S.

    2005-11-22

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters

  10. Flexible fiber energy storage and integrated devices: recent progress and perspectives

    OpenAIRE

    Xianfu Wang; Kai Jiang; Guozhen Shen

    2015-01-01

    Flexible fiber-shaped energy storage devices have been studied and developed intensively over the past few years to meet the demands of modern electronics in terms of flexibility, weavability and being lightweight. In this review, fiber electrodes and flexible fiber energy storage devices containing solid-state supercapacitors (SCs) and lithium-ion batteries (LIBs) are carefully summarized with particular emphasis on their electrode fabrication, structure design and flexibility. In addition, ...

  11. Nanostructure Core Fiber With Enhanced Performances: Design, Fabrication and Devices

    DEFF Research Database (Denmark)

    Yu, X.; Yan, Min; Ren, G.B.;

    2009-01-01

    We report a new type of silica-based all-solid fiber with a 2-D nanostructure core. The nanostructure core fiber (NCF) is formed by a 2-D array of high-index rods of sub-wavelength dimensions. We theoretically study the birefringence property of such fibers over a large wavelength range. Large...

  12. Novel fiber optic tip designs and devices for laser surgery

    Science.gov (United States)

    Hutchens, Thomas Clifton

    Fiber optic delivery of laser energy has been used for years in various types of surgical procedures in the human body. Optical energy provides several benefits over electrical or mechanical surgery, including the ability to selectively target specific tissue types while preserving others. Specialty fiber optic tips have also been introduced to further customize delivery of laser energy to the tissue. Recent evolution in lasers and miniaturization has opened up opportunities for many novel surgical techniques. Currently, ophthalmic surgeons use relatively invasive mechanical tools to dissect retinal deposits which occur in proliferative diabetic retinopathy. By using the tight focusing properties of microspheres combined with the short optical penetration depth of the Erbium:YAG laser and mid-IR fiber delivery, a precise laser scalpel can be constructed as an alternative, less invasive and more precise approach to this surgery. Chains of microspheres may allow for a self limiting ablation depth of approximately 10 microm based on the defocusing of paraxial rays. The microsphere laser scalpel may also be integrated with other surgical instruments to reduce the total number of handpieces for the surgeon. In current clinical laser lithotripsy procedures, poor input coupling of the Holmium:YAG laser energy frequently damages and requires discarding of the optical fiber. However, recent stone ablation studies with the Thulium fiber laser have provided comparable results to the Ho:YAG laser. The improved spatial beam profile of the Thulium fiber laser can also be efficiently coupled into a fiber approximately one third the diameter and reduces the risk of damaging the fiber input. For this reason, the trunk optical fiber minus the distal fiber tip can be preserved between procedures. The distal fiber tip, which degrades during stone ablation, could be made detachable and disposable. A novel, low-profile, twist-locking, detachable distal fiber tip interface was designed

  13. Flexible fiber energy storage and integrated devices: recent progress and perspectives

    Directory of Open Access Journals (Sweden)

    Xianfu Wang

    2015-06-01

    Full Text Available Flexible fiber-shaped energy storage devices have been studied and developed intensively over the past few years to meet the demands of modern electronics in terms of flexibility, weavability and being lightweight. In this review, fiber electrodes and flexible fiber energy storage devices containing solid-state supercapacitors (SCs and lithium-ion batteries (LIBs are carefully summarized with particular emphasis on their electrode fabrication, structure design and flexibility. In addition, emerging wire-shaped integrated energy systems, combined energy storage and solar cells, as well as other electronic devices to realize self-charging and self-powered integrated systems are specifically highlighted.

  14. Linear and nonlinear properties in soft glass optical fibers for device applications

    Science.gov (United States)

    Kiani, Leily; Munasinghe, Tilanka; Zhang, Wen Qi; Afshar, Shahraam; Sharping, Jay

    2012-02-01

    Optical fiber technology is predominantly based on silica glass fibers. Non-silica soft glass fibers exhibit substantially different optical properties such as higher refractive index, larger nonlinear coefficient and structural fabrication flexibility. We aim to exploit these novel properties for device applications such as sensing and light generation. We report measurement of linear dispersion and nonlinear coefficient in the range of 1.5 μm in two custom designed soft glass microstructure optical fibers. The fibers are composed of SF57 (Schott) and Bismuth-doped silica (Asahi Glass Co.) respectively with Hexagonal Wagonwheel microstructure design. These fibers are designed to allow phase matching of nonlinear optical processes near 1.6μm. Our measurements indicate nonlinear coefficients 1000 times that of standard silica fiber. Transverse modes in these fibers are difficult to separate leading to a complicated dispersion results. Next steps include observation of parametric generation and Brillouin gain.

  15. Optical fiber loops and helices: tools for integrated photonic device characterization and microfluidic trapping

    Science.gov (United States)

    Ren, Yundong; Zhang, Rui; Ti, Chaoyang; Liu, Yuxiang

    2016-09-01

    Tapered optical fibers can deliver guided light into and carry light out of micro/nanoscale systems with low loss and high spatial resolution, which makes them ideal tools in integrated photonics and microfluidics. Special geometries of tapered fibers are desired for probing monolithic devices in plane as well as optical manipulation of micro particles in fluids. However, for many specially shaped tapered fibers, it remains a challenge to fabricate them in a straightforward, controllable, and repeatable way. In this work, we fabricated and characterized two special geometries of tapered optical fibers, namely fiber loops and helices, that could be switched between one and the other. The fiber loops in this work are distinct from previous ones in terms of their superior mechanical stability and high optical quality factors in air, thanks to a post-annealing process. We experimentally measured an intrinsic optical quality factor of 32,500 and a finesse of 137 from a fiber loop. A fiber helix was used to characterize a monolithic cavity optomechanical device. Moreover, a microfluidic "roller coaster" was demonstrated, where microscale particles in water were optically trapped and transported by a fiber helix. Tapered fiber loops and helices can find various applications ranging from on-the-fly characterization of integrated photonic devices to particle manipulation and sorting in microfluidics.

  16. Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom

    Science.gov (United States)

    Goyal, Amit

    2013-07-09

    A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

  17. Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom

    Energy Technology Data Exchange (ETDEWEB)

    Goyal, Amit (Knoxville, TN)

    2012-07-24

    A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

  18. Compact Fiber-Parametric Devices for Biophotonics Applications

    Science.gov (United States)

    2012-03-01

    different from the model for Yb-doped fiber amplifiers or EDFA . To gain some understanding of the dynamic pulse evolution of two pulses in the FOPA, we...performance of FOPA with former EDFA or Yb-doped fiber amplifier Chenji Gu 9 of 18 5/23/2009 Research Proposal methods [17,18], we suppose the

  19. Properties of fiber composites for advanced flywheel energy storage devices

    Energy Technology Data Exchange (ETDEWEB)

    DeTeresa, S J; Groves, S E

    2001-01-12

    The performance of commercial high-performance fibers is examined for application to flywheel power supplies. It is shown that actual delivered performance depends on multiple factors such as inherent fiber strength, strength translation and stress-rupture lifetime. Experimental results for recent stress-rupture studies of carbon fibers will be presented and compared with other candidate reinforcement materials. Based on an evaluation of all of the performance factors, it is concluded that carbon fibers are preferred for highest performance and E-glass fibers for lowest cost. The inferior performance of the low-cost E-glass fibers can be improved to some extent by retarding the stress-corrosion of the material due to moisture and practical approaches to mitigating this corrosion are discussed. Many flywheel designs are limited not by fiber failure, but by matrix-dominated failure modes. Unfortunately, very few experimental results for stress-rupture under transverse tensile loading are available. As a consequence, significant efforts are made in flywheel design to avoid generating any transverse tensile stresses. Recent results for stress-rupture of a carbon fiber/epoxy composite under transverse tensile load reveal that these materials are surprisingly durable under the transverse loading condition and that some radial tensile stress could be tolerated in flywheel applications.

  20. High-Efficiency Supercontinuum Generation at 12.8 W in an All-Fiber Device

    Institute of Scientific and Technical Information of China (English)

    WANG Yan-Bin; HOU Jing; CHEN Zi-Lun; CHEN Sheng-Ping; SONG Rui; LI Ying; YANG Wei-Qiang; LU Qi-Sheng

    2011-01-01

    We report 12.8 W supercontinuum generation with a high optical-to-optical conversion efficiency of up to 85% in an all-fiber device.This is achieved by using an all-fiber picosecond master oscillator power amplifier laser,which has an output pigtail double clad fiber,to pump a 3-m photonic crystal fiber with the core at one end enlarged by adiabatically collapsing two inner layers of air holes while keeping other holes open.Our experimental results show that the short-wavelength generation is due to dispersive wave trapping by redshifted solitons.

  1. Fiber-based wearable electronics: a review of materials, fabrication, devices, and applications.

    Science.gov (United States)

    Zeng, Wei; Shu, Lin; Li, Qiao; Chen, Song; Wang, Fei; Tao, Xiao-Ming

    2014-08-20

    Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable. Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions. The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns. However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation. This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products. In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices. Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption.

  2. Optical fiber sensors for IoT and smart devices

    CERN Document Server

    Domingues, Maria de Fátima F

    2017-01-01

    This brief provides a review of the evolution of optical fiber sensing solutions and related applications. Unique production methods are presented and discussed, highlighting their evolution and analyzing their complexity. Under this scope, this brief presents the existing silica optical fiber sensors and polymer optical fiber sensors solutions, comparing its field of action (sensitivity, accuracy), complexity of manufacture and economic cost. Special attention is given to low-cost production methods. This brief evaluates the different existing techniques, assessing the accuracy and suitability of these sensors for possible Internet of Things (IoT) integration in different considered scenarios. Critical analytical techniques, also covered in this brief, are expected to play a key role in the world of IoT and the smart city of tomorrow.

  3. Development of fiber lasers and devices for coherent Raman scattering microscopy

    Science.gov (United States)

    Lamb, Erin Stranford

    As ultrafast laser technology has found expanding application in machining, spectroscopy, microscopy, surgery, and numerous other areas, the desire for inexpensive and robust laser sources has grown. Until recently, nonlinear effects in fiber systems due to the tight confinement of the light in the core have limited their performance. However, with advances in managing nonlinearity through pulse propagation physics and the use of large core fibers, the performance of fiber lasers can compete with that of their solid-state counterparts. As specific applications, such as coherent Raman scattering microscopy, emerge that stand to benefit from fiber technology, new performance challenges in areas such as laser noise are anticipated. This thesis studies nonlinear pulse propagation in fiber lasers and fiber parametric devices. Applications of dissipative solitons and self-similar pulse propagation to low-repetition rate oscillators that have the potential to simplify short-pulse amplification schemes will be examined. The rest of this thesis focuses on topics relevant to fiber laser development for coherent Raman scattering microscopy sources. Coherent pulse division and recombination inside the laser cavity will be introduced as an energy-scaling mechanism and demonstrated for a fiber soliton laser. The relative intensity noise properties of mode-locked fiber lasers, with a particular emphasis on normal dispersion lasers, will be explored in simulation and experiment. A fiber optical parametric oscillator will be studied in detail for low noise frequency conversion of picosecond pulses, and its utility for coherent Raman imaging will be demonstrated. Spectral compression of femtosecond pulses is used to generate picosecond pulses to pump this device, and this technique provides a route to future noise reduction in the system. Furthermore, this device forms a multimodal source capable of providing the picosecond pulses for coherent Raman scattering microscopy and the

  4. Experimental arrangement to measure dispersion in optical fiber devices

    Energy Technology Data Exchange (ETDEWEB)

    Armas Rivera, Ivan [Benemerita Universidad Autonoma de Puebla, Facultad de Ciencias de la Electronica (Mexico); Beltran Perez, Georgina; Castillo Mixcoatl, Juan; Munoz Aguirre, Severino [Benemerita Universidad Autonoma de Puebla, Facultad de Ciencias Fisico Matematicas (Mexico); Zaca Moran, Placido, E-mail: ivan_rr1@hotmail.com [Benemerita Universidad Autonoma de Puebla, Fisicoquimica de Materiales ICUAP (Mexico)

    2011-01-01

    Dispersion is a quite important parameter in systems based on optical fiber, especially in pulsed emission lasers, where the temporal width is affected by such parameter. Therefore, it is necessary to consider the dispersion provoked by each component in the cavity. There are various experimental interferometric arrangements to evaluate this parameter. Generally, these systems modify the wavelength to obtain information about the n({lambda}) dependency, which is contained in the interferogram phase. However, this makes the system quite slow and it requires tunable and narrow bandwidth laser sources. In the present work, results obtained from an arrangement based on Mach-Zehnder interferometer where one of the arms is the optical fiber under study, while the reference one is air, are presented. In order to determine the n({lambda}) dependency, a wide spectrum light source was used in the wavelength range of interest. The phase information was evaluated from the interferometric signal measured by an optical spectrum analyzer.

  5. Innovative architecture of switching device for expanding the applications in fiber to the home (FTTH)

    Science.gov (United States)

    Mahmoud, Mohamed; Fayed, Heba A.; Aly, Moustafa H.; Aboul Seoud, A. K.

    2011-08-01

    A new device, optical cross add drop multiplexer (OXADM), is proposed and analyzed. It uses the combination concept of optical add drop multiplexer (OADM) and optical cross connect (OXC). It enables a wavelength switch while implementing add and drop functions simultaneously. So, it expands the applications in fiber to the home (FTTH) and optical core networks. A very high isolation crosstalk level (~ 60 dB) is achieved. Also, a bidirectional OXADM and N×N OXADM are proposed. Finally, a multistage OXADM is presented making some sort of wavelength buffering. To make these devices operate more efficient, tunable fiber Bragg gratings (TFBGs) switches are used to control the operation mechanism.

  6. FIBER AND INTEGRATED OPTICS. FIBER WAVEGUIDE DEVICES: Fiber Michelson interferometer with a 50-km difference between its arms

    Science.gov (United States)

    Dianov, Evgenii M.; Kuznetsov, A. V.; Makarenko, A. Yu; Okhotnikov, O. G.; Prokhorov, A. M.; Shcherbakov, E. A.

    1990-12-01

    Single-mode fiber waveguides were used in constructing a Michelson interferometer with a 50-km difference between its arm lengths. An analysis was made of its resolving power as a function of the parameters of the optical part and of the characteristics of the electronic apparatus used in the system. The width of a spectral emission line of a semiconductor laser with a distributed Rayleigh fiber resonator was determined.

  7. Large-area single-mode photonic bandgap vcsels

    DEFF Research Database (Denmark)

    Birkedal, Dan; Gregersen, N.; Bischoff, S.;

    2003-01-01

    We demonstrate that the photonic bandgap effect can be used to control the modes of large area vertical cavity surface emitting lasers. We obtain more than 20 dB side mode suppression ratios in a 10-micron area device.......We demonstrate that the photonic bandgap effect can be used to control the modes of large area vertical cavity surface emitting lasers. We obtain more than 20 dB side mode suppression ratios in a 10-micron area device....

  8. Preparation and application of a coated-fiber needle extraction device.

    Science.gov (United States)

    Lou, Dawei; Chen, Huijun; Wang, Xiyue; Lian, Lili; Zhu, Bo; Yang, Qiaoling; Guo, Tingxiu; Li, Qiuying; Wang, Runnan; Guo, Xiaoyang

    2016-10-01

    In this study, a needle-trap device with fibers coated with a molecularly imprinted polymer was developed for separation. A number of heat-resistant Zylon filaments were longitudinally packed into a glass capillary, followed by coating with a molecularly imprinted polymer. Then, the molecularly imprinted polymer coating was copolymerized and anchored onto the surface of the fibers. The bundle of synthetic fibers coated with the molecularly imprinted polymer was packed into a 21G stainless-steel needle and served as an extraction medium. The coated-fiber needle extraction device was used to extract volatile organic compounds from paints and gasoline effectively. Subsequently, the extracted volatile organic compounds were analyzed by gas chromatography. Calibration curves of gaseous benzene, toluene, ethylbenzene, and o-xylene in the concentration range of 1-250 μg/L were obtained to evaluate the method, acceptable linearity was attended with correlation coefficients above 0.998. The limit of detection of benzene, toluene, ethylbenzene, and o-xylene was 11-20 ng/L using the coated-fiber needle-trap device. The relative standard deviation of needle-to-needle repeatability was less than 8% with an extraction time of 20 min. The loss rates after storage for 3 and 7 days at room temperature were less than 30%.

  9. Analysis of flavor and perfume using an internally cooled coated fiber device.

    Science.gov (United States)

    Chen, Yong; Begnaud, Frédéric; Chaintreau, Alain; Pawliszyn, Janusz

    2007-05-01

    A miniaturized internally cooled coated fiber device was applied for the analysis of flavors and fragrances from various matrices. Its integration with a CTC CombiPAL autosampler enabled high throughput for the analysis of analytes in complex matrices that required simultaneous heating of the matrices and cooling of the fiber coating to achieve high extraction efficiency. It was found that up to ten times increase of extraction efficiencies was observed when the device was used to extract flavor compounds in water, even when limited sample temperatures were used to preserve the integrity of target compounds. The extraction of the flavor compounds in water with the device was reproducible, with RSD not larger than 15%. The lower limits of the linear ranges were in the low ppb range, which was about one order of magnitude smaller than those obtained with the commercialized 100 microm PDMS fibers. Exhaustive extraction of some perfume ingredients from a complex matrix (shampoo) was realized. All achieved recoveries were not less than 80%. The repeatability of the extraction of the perfume compounds from shampoo was better than 10%. The linear ranges were about 1-3000 microg/g, and the LOD was about 0.2-1 microg/g. The automated internally cooled coated fiber device was demonstrated to be a powerful sample preparation tool in flavor and fragrance analysis.

  10. 78 FR 77166 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Science.gov (United States)

    2013-12-20

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Request for Statements on the Public Interest AGENCY: U.S. International...

  11. Contact and Bandgap Engineering in Two Dimensional Crystal

    Science.gov (United States)

    Chu, Tao

    At the heart of semiconductor research, bandgap is one of the key parameters for materials and determine their applications in modern technologies. For traditional bulk semiconductors, the bandgap is determined by the chemical composition and specific arrangement of the crystal lattices, and usually invariant during the device operation. Nevertheless, it is highly desirable for many optoelectronic and electronic applications to have materials with continuously tunable bandgap available. In the past decade, 2D layered materials including graphene and transition metal dichalcogenides (TMDs) have sparked interest in the scientific community, owing to their unique material properties and tremendous potential in various applications. Among many newly discovered properties that are non-existent in bulk materials, the strong in-plane bonding and weak van der Waals inter-planar interaction in these 2D layered structures leads to a widely tunable bandgap by electric field. This provides an extra knob to engineer the fundamental material properties and open a new design space for novel device operation. This thesis focuses on this field controlled dynamic bandgap and can be divided into three parts: (1) bilayer graphene is the first known 2D crystal with a bandgap can be continuously tuned by electric field. However, the electrical transport bandgaps is much smaller than both theoretical predictions and extracted bandgaps from optical measurements. In the first part of the thesis, the limiting factors of preventing achieving a large transport bandgap in bilayer graphene are investigated and different strategies to achieve a large transport bandgap are discussed, including the vertically scaling of gate oxide and patterning channel into ribbon structure. With a record large transport bandgap of ~200meV, a dual-gated semiconducting bilayer graphene P/N junction with extremely scaled gap of 20nm in-between is fabricated. A tunable local maxima feature, associated with 1D v

  12. Electrospun fibers of PLA/P3HT blends for device and sensor applications

    Science.gov (United States)

    Serrano, William; Pinto, Nicholas

    2013-03-01

    The thermoplastic aliphatic polyester, poly (lactic acid) (PLA) is a biodegradable polymer that is sometimes used in implant screws for bone repair. Our focus was to fabricate fibers of this polymer and its blends with p-doped poly (3-hexylthiophene)-(P3HT) in order to extend its use to devices and/or sensors. PLA/P3HT fibers were prepared in air at room temperature using the electrospinning technique that is cheap, fast and reliable. Scanning Electron Microscope images of the fibers reveal that the presence of P3HT does not affect the fabrication of PLA fibers at low or high polymer concentrations in chloroform, retaining the same morphological structure of pure PLA fibers. The fiber diameters were in the range 1-10 microns. A slight increase in fiber formation results with the addition of P3HT, most likely due to a reduction of the solution surface tension. Results of the electrical characterization of this material will be presented. DoD and NSF

  13. 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-ybuffers

    Institute of Scientific and Technical Information of China (English)

    Ji Lian; Lu Shu-Long; Jiang De-Sheng; Zhao Yong-Ming; Tan Ming; Zhu Ya-Qi; Dong Jian-Rong

    2013-01-01

    Single-junction,lattice-mismatched In0.69Ga0.31 As thermophotovoltaic (TPV) devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition (MOCVD).Compositionally undulating stepgraded InAsyPl-y buffer layers with a lattice mismatch of ~ 1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate.With an optimized buffer thickness,the In0.69Ga0.31 As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion.High-performance single-junction devices are demonstrated,with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm2,which are measured under the standard solar simulator of air mass 1.5-global (AM 1.5 G).

  14. Hollow Fiber Membrane Dehumidification Device for Air Conditioning System.

    Science.gov (United States)

    Zhao, Baiwang; Peng, Na; Liang, Canzeng; Yong, Wai Fen; Chung, Tai-Shung

    2015-11-16

    In order to provide a comfortable living and working environment indoors in tropical countries, the outdoor air often needs to be cooled and dehumidified before it enters the rooms. Membrane separation is an emerging technology for air dehumidification and it is based on the solution diffusion mechanism. Water molecules are preferentially permeating through the membranes due to its smaller kinetic diameter and higher condensability than the other gases. Compared to other dehumidification technologies such as direct cooling or desiccation, there is no phase transition involved in membrane dehumidification, neither the contact between the fresh air stream and the desiccants. Hence, membrane dehumidification would not only require less energy consumption but also avoid cross-contamination problems. A pilot scale air dehumidification system is built in this study which comprises nine pieces of one-inch PAN/PDMS hollow fiber membrane modules. A 150 h long-term test shows that the membrane modules has good water vapor transport properties by using a low vacuum force of only 0.78 bar absolute pressure at the lumen side. The water vapor concentration of the feed humid air decreases dramatically from a range of 18-22 g/m³ to a range of 13.5-18.3 g/m³. Most importantly, the total energy saving is up to 26.2% compared with the conventional air conditioning process.

  15. Hollow Fiber Membrane Dehumidification Device for Air Conditioning System

    Directory of Open Access Journals (Sweden)

    Baiwang Zhao

    2015-11-01

    Full Text Available In order to provide a comfortable living and working environment indoors in tropical countries, the outdoor air often needs to be cooled and dehumidified before it enters the rooms. Membrane separation is an emerging technology for air dehumidification and it is based on the solution diffusion mechanism. Water molecules are preferentially permeating through the membranes due to its smaller kinetic diameter and higher condensability than the other gases. Compared to other dehumidification technologies such as direct cooling or desiccation, there is no phase transition involved in membrane dehumidification, neither the contact between the fresh air stream and the desiccants. Hence, membrane dehumidification would not only require less energy consumption but also avoid cross-contamination problems. A pilot scale air dehumidification system is built in this study which comprises nine pieces of one-inch PAN/PDMS hollow fiber membrane modules. A 150 h long-term test shows that the membrane modules has good water vapor transport properties by using a low vacuum force of only 0.78 bar absolute pressure at the lumen side. The water vapor concentration of the feed humid air decreases dramatically from a range of 18–22 g/m3 to a range of 13.5–18.3 g/m3. Most importantly, the total energy saving is up to 26.2% compared with the conventional air conditioning process.

  16. Review of wide band-gap semiconductors technology

    Directory of Open Access Journals (Sweden)

    Jin Haiwei

    2016-01-01

    Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

  17. Measurement-Device-Independent Quantum Key Distribution Over a 404 km Optical Fiber

    Science.gov (United States)

    Yin, Hua-Lei; Chen, Teng-Yun; Yu, Zong-Wen; Liu, Hui; You, Li-Xing; Zhou, Yi-Heng; Chen, Si-Jing; Mao, Yingqiu; Huang, Ming-Qi; Zhang, Wei-Jun; Chen, Hao; Li, Ming Jun; Nolan, Daniel; Zhou, Fei; Jiang, Xiao; Wang, Zhen; Zhang, Qiang; Wang, Xiang-Bin; Pan, Jian-Wei

    2016-11-01

    Measurement-device-independent quantum key distribution (MDIQKD) with the decoy-state method negates security threats of both the imperfect single-photon source and detection losses. Lengthening the distance and improving the key rate of quantum key distribution (QKD) are vital issues in practical applications of QKD. Herein, we report the results of MDIQKD over 404 km of ultralow-loss optical fiber and 311 km of a standard optical fiber while employing an optimized four-intensity decoy-state method. This record-breaking implementation of the MDIQKD method not only provides a new distance record for both MDIQKD and all types of QKD systems but also, more significantly, achieves a distance that the traditional Bennett-Brassard 1984 QKD would not be able to achieve with the same detection devices even with ideal single-photon sources. This work represents a significant step toward proving and developing feasible long-distance QKD.

  18. Multidimensional microstructured photonic device based on all-solid waveguide array fiber and magnetic fluid

    Science.gov (United States)

    Miao, Yinping; Ma, Xixi; He, Yong; Zhang, Hongmin; Yang, Xiaoping; Yao, Jianquan

    2017-01-01

    An all-solid waveguide array fiber (WAF) is one kind of special microstructured optical fiber in which the higher-index rods are periodically distributed in a low-index silica host to form the transverse two-dimensional photonic crystal. In this paper, one kind of multidimensional microstructured optical fiber photonic device is proposed by using electric arc discharge method to fabricate periodic tapers along the fiber axis. By tuning the applied magnetic field intensity, the propagation characteristics of the all-solid WAF integrated with magnetic fluid are periodically modulated in both radial and axial directions. Experimental results show that the wavelength changes little while the transmission loss increases for an applied magnetic field intensity range from 0 to 500 Oe. The magnetic field sensitivity is 0.055 dB/Oe within the linear range from 50 to 300 Oe. Meanwhile, the all-solid WAF has very similar thermal expansion coefficient for both high- and low-refractive index glasses, and thermal drifts have a little effect on the mode profile. The results show that the temperature-induced transmission loss is <0.3 dB from 26°C to 44°C. Further tuning coherent coupling of waveguides and controlling light propagation, the all-solid WAF would be found great potential applications to develop new micro-nano photonic devices for optical communications and optical sensing applications.

  19. Multidimensional microstructured photonic device based on all-solid waveguide array fiber and magnetic fluid

    Directory of Open Access Journals (Sweden)

    Miao Yinping

    2016-11-01

    Full Text Available An all-solid waveguide array fiber (WAF is one kind of special microstructured optical fiber in which the higher-index rods are periodically distributed in a low-index silica host to form the transverse two-dimensional photonic crystal. In this paper, one kind of multidimensional microstructured optical fiber photonic device is proposed by using electric arc discharge method to fabricate periodic tapers along the fiber axis. By tuning the applied magnetic field intensity, the propagation characteristics of the all-solid WAF integrated with magnetic fluid are periodically modulated in both radial and axial directions. Experimental results show that the wavelength changes little while the transmission loss increases for an applied magnetic field intensity range from 0 to 500 Oe. The magnetic field sensitivity is 0.055 dB/Oe within the linear range from 50 to 300 Oe. Meanwhile, the all-solid WAF has very similar thermal expansion coefficient for both high- and low-refractive index glasses, and thermal drifts have a little effect on the mode profile. The results show that the temperature-induced transmission loss is <0.3 dB from 26°C to 44°C. Further tuning coherent coupling of waveguides and controlling light propagation, the all-solid WAF would be found great potential applications to develop new micro-nano photonic devices for optical communications and optical sensing applications.

  20. Optofluidic Temperature and Pressure Measurements with Fiber Bragg Gratings Embedded in Microfluidic Devices

    CERN Document Server

    Cooksey, Gregory A

    2016-01-01

    The integration of photonic sensors into microfluidic devices provides opportunities for dynamic measurement of chemical and physical properties of fluids in very small volumes. We previously reported on the use of commercially available Fiber Bragg Gratings (FBGs) and on-chip silicon waveguides for temperature sensing. In this report, we demonstrate the integration of FBGs into easy-to-fabricate microfluidic devices and report on their sensitivity for temperature and pressure measurement in microliter volumes. These sensors present new routes to measurement in microfluidic applications such as small-volume calorimetry and microflow metrology.

  1. Wide bandgap matrix switcher, amplifier and oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Sampayan, Stephen

    2016-08-16

    An electronic device comprising an optical gate, an electrical input an electrical output and a wide bandgap material positioned between the electrical input and the electrical output to control an amount of current flowing between the electrical input and the electrical output in response to a stimulus received at the optical gate can be used in wideband telecommunication applications in transmission of multi-channel signals.

  2. New Light-Harvesting Materials Using Accurate and Efficient Bandgap Calculations

    DEFF Research Database (Denmark)

    Castelli, Ivano Eligio; Hüser, Falco; Pandey, Mohnish;

    2014-01-01

    of materials for different applications where the bandgaps are used as descriptors for the efficiency of a photoelectrochemical device. Here, new light harvesting materials are proposed to be used in a one-photon photoelectrochemical device for water splitting by combining the estimation of the bandgaps...

  3. Wireless platform for controlled nitric oxide releasing optical fibers for mediating biological response to implanted devices.

    Science.gov (United States)

    Starrett, Michael A; Nielsen, Matthew; Smeenge, David M; Romanowicz, Genevieve E; Frost, Megan C

    2012-12-01

    Despite the documented potential to leverage nitric oxide generation to improve in vivo performance of implanted devices, a key limitation to current NO releasing materials tested thus far is that there has not been a means to modulate the level of NO release after it has been initiated. We report the fabrication of a wireless platform that uses light to release NO from a polymethylmethacrylate (PMMA) optical fiber coated with an S-nitroso-N-acetylpenicillamine derivatized polydimethylsiloxane (SNAP-PDMS). We demonstrate that a VAOL-5GSBY4 LED (λ(dominant)=460 nm) can be used as a dynamic trigger to vary the level of NO released from 500 μm diameter coated PMMA. The ability to generate programmable sequences of NO flux from the surface of these coated fibers offers precise spatial and temporal control over NO release and provides a platform to begin the systematic study of in vivo physiological response to implanted devices. NO surface fluxes up to 3.88 ± 0.57 × 10(-10)mol cm(-2)min(-1) were achieved with -100 μm thick coatings on the fibers and NO flux was pulsed, ramped and held steady using the wireless platform developed. We demonstrate the NO release is linearly proportional to the drive current applied to the LED (and therefore level of light produced from the LED). This system allow the surface flux of NO from the fibers to be continuously changed, providing a means to determine the level and duration of NO needed to mediate physiological response to blood contacting and subcutaneous implants and will ultimately lead to the intelligent design of NO releasing materials tailored to specific patterns of NO release needed to achieve reliable in vivo performance for intravascular and subcutaneous sensors and potentially for a wide variety of other implanted biomedical devices.

  4. Rheological Measurement of Concentrated Pulp Fiber Suspensions in Oscillatory Shear Using a Novel Device

    Directory of Open Access Journals (Sweden)

    Di Yu

    2014-11-01

    Full Text Available This paper presents a novel device based on an oscillating torsion resonator with continuously varying frequency capability to characterize the rheological properties of pulp fiber suspensions in a concentrated regime. Fiber suspensions made from unbleached wheat straw pulp at concentrations ranging from 5 wt% to 15 wt% were used. Pulp suspensions exhibit shear-thinning behavior up to a limited frequency value, after which Newtonian behavior prevails. Effects of frequency, fiber concentration, and beating process on suspension viscoelastic properties are discussed. The suspensions at different concentrations are structured in a similar way, leading to a weak gel-like structure. The storage modulus (G' of the suspension can be determined by a two-region (shear increasing – shear decreasing profile, while loss modulus (G'' keeps increasing for the whole frequency range investigated. At the same frequency, G' and G'' increase nonlinearly with fiber concentration. The beating process brings a decrease in both G' and G''. The power-law model is used for data fitting.

  5. Photonic crystal fibers

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper; Hansen, K P; Nielsen, M D;

    2003-01-01

    Photonic crystal fibers having a complex microstructure in the transverse plane constitute a new and promising class of optical fibers. Such fibers can either guide light through total internal reflection or the photonic bandgap effect, In this paper, we review the different types and applications...... of photonic crystal fibers with particular emphasis on recent advances in the field....

  6. Development of an opto-electronic fiber device with multiple nano-probes

    Science.gov (United States)

    Mehta, N.; Cocking, A.; Zhang, C.; Ma, D.; Xu, Y.; Liu, Z.

    2016-11-01

    We present the fabrication and characterization of an opto-electronic fiber device which can allow for both electromechanical functionality and optical waveguiding capability. The air holes of a photonic crystal fiber are selectively sealed and then pumped with molten metal under pressure. The metal filled holes act as electrodes to which individual carbon nanotubes (CNT) are attached precisely by a laser-welding technique or a focused ion beam assisted pick-and-bond technique. The optical modal profile and the group velocity dispersion of the fabricated device are studied both numerically and experimentally. We also present preliminary experimental proof showing the feasibility of electric actuation of a pair of nanotubes by applying up to 40 V potential difference between the filled electrodes. Furthermore, numerical simulations are carried out which agree with the experimentally observed displacement of the CNT upon electric actuation. The unique aspect of our device is that it provides optical waveguiding and electromechanical nano-probing capability in a single package. Such combined functionality can potentially enable simultaneous electrical and optical manipulation and interrogation at the nanoscale.

  7. Structural refinement, band-gap analysis and optical properties of GdAlO3 nanophosphors influenced by Dy3+ ion concentrations for white light emitting device applications

    Science.gov (United States)

    Jisha, P. K.; Naik, Ramachandra; Prashantha, S. C.; Nagaswarupa, H. P.; Nagabhushana, H.; Basavaraj, R. B.; Sharma, S. C.; Prasad, Daruka

    2016-04-01

    Nanosized GdAlO3 phosphors activated with Dy3+ were prepared by a combustion method. Synthesized phosphors were calcined at 1000 °C for 3 h in order to achieve crystallinity. Powder x-ray diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM) analysis was used to characterize the prepared product. The orthorhombic phase was observed in the XRD pattern. The particle size of the samples was calculated as around 25 nm. The SEM images show an irregular shape of the prepared nanophosphor. Functional groups of the phosphors were examined by Fourier transform infrared (FTIR) spectroscopy. Photoluminescence (PL) properties of Dy3+ doped GdAlO3 for near-ultraviolet excitation (352 nm) were studied in order to investigate the possibility of its use in white light emitting device applications. Judd-Ofelt intensity parameters, radiative transition rate (A T) and radiative lifetimes (τ rad) were evaluated from the emission spectrum by adopting a standard procedure. The Commission International de l’Eclairage (CIE) color coordinates and correlated color temperature (CCT) are studied for the optimized phosphor. It is found that the color coordinates of Dy3+ doped GdAlO3 powders fall in the white region of the CIE diagram, and the average CCT value was found to be about 6276 K. Therefore, the present phosphor is highly useful for display applications.

  8. Densely Aligned Graphene Nanoribbon Arrays and Bandgap Engineering

    Energy Technology Data Exchange (ETDEWEB)

    Su, Justin [Stanford Univ., CA (United States); Chen, Changxin [Stanford Univ., CA (United States); Gong, Ming [Stanford Univ., CA (United States); Kenney, Michael [Stanford Univ., CA (United States)

    2017-01-04

    Graphene has attracted great interest for future electronics due to its high mobility and high thermal conductivity. However, a two-dimensional graphene sheet behaves like a metal, lacking a bandgap needed for the key devices components such as field effect transistors (FETs) in digital electronics. It has been shown that, partly due to quantum confinement, graphene nanoribbons (GNRs) with ~2 nm width can open up sufficient bandgaps and evolve into semiconductors to exhibit high on/off ratios useful for FETs. However, a challenging problem has been that, such ultra-narrow GNRs (~2 nm) are difficult to fabricate, especially for GNRs with smooth edges throughout the ribbon length. Despite high on/off ratios, these GNRs show very low mobility and low on-state conductance due to dominant scattering effects by imperfections and disorders at the edges. Wider GNRs (>5 nm) show higher mobility, higher conductance but smaller bandgaps and low on/off ratios undesirable for FET applications. It is highly desirable to open up bandgaps in graphene or increase the bandgaps in wide GNRs to afford graphene based semiconductors for high performance (high on-state current and high on/off ratio) electronics. Large scale ordering and dense packing of such GNRs in parallel are also needed for device integration but have also been challenging thus far. It has been shown theoretically that uniaxial strains can be applied to a GNR to engineer its bandgap. The underlying physics is that under uniaxial strain, the Dirac point moves due to stretched C-C bonds, leading to an increase in the bandgap of armchair GNRs by up to 50% of its original bandgap (i.e. bandgap at zero strain). For zigzag GNRs, due to the existence of the edge states, changes of bandgap are smaller under uniaxial strain and can be increased by ~30%. This work proposes a novel approach to the fabrication of densely aligned graphene nanoribbons with highly smooth edges afforded by anisotropic etching and uniaxial strain for

  9. Fiber free plug and play on-chip scattering cytometer module – for implementation in microfluidic point of care devices

    DEFF Research Database (Denmark)

    Jensen, Thomas Glasdam; Kutter, Jörg Peter

    2010-01-01

    In this paper, we report on recent progress toward the development of a plug and play on-chip cytometer based on light scattering. By developing a device that does not depend on the critical alignment and cumbersome handling of fragile optical fibers, we approach a device that is suitable for non......-expert users and Point-Of-Care (POC) applications. It has been demonstrated that this device is capable of detecting and counting particles down to 1 μm at 100 particles per second. This device only depends on a single microfluidic channel. Hence, the device is easy to implement, or to use on its own....

  10. High performance, high bandgap, lattice-mismatched, GaInP solar cells

    Science.gov (United States)

    Wanlass, Mark W.; Carapella, Jeffrey J.; Steiner, Myles A.

    2014-07-08

    High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.

  11. High performance, high bandgap, lattice-mismatched, GaInP solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wanlass, Mark W; Carapella, Jeffrey J; Steiner, Myles A

    2016-11-01

    High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.

  12. Large Bandgap Semiconductors for Solar Water Splitting

    DEFF Research Database (Denmark)

    Malizia, Mauro

    water splitting devices having tandem design. The increase of the photovoltage produced by GaP under illumination was the main goal of this work. GaP has a bandgap of 2.25 eV and could in theory produce a photovoltage of approximately 1.7 V. Instead, the photovoltage produced by the semiconductor...... density generated by GaP was increased by more than 60% by electrochemical etching of the surface. The etching process produces a rough microstructured surface that increases the optical path length of the incident photons and the collection of photogenerated electrons.Furthermore, the synthesis of BiVO4...

  13. Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure

    Science.gov (United States)

    Hwang, Beomyong; Hwang, Jeongwoon; Yoon, Jong Keon; Lim, Sungjun; Kim, Sungmin; Lee, Minjun; Kwon, Jeong Hoon; Baek, Hongwoo; Sung, Dongchul; Kim, Gunn; Hong, Suklyun; Ihm, Jisoon; Stroscio, Joseph A.; Kuk, Young

    2016-08-01

    Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recent transport measurement demonstrated the presence of a bandgap in a graphene layer where the asymmetry was introduced by placing a graphene layer on a hexagonal boron nitride (h-BN) substrate. Similar bandgap has been observed in graphene layers on metal substrates by local probe measurements; however, this phenomenon has not been observed in graphene layers on a near-insulating substrate. Here, we present bulk bandgap-like features in a graphene layer epitaxially grown on an h-BN substrate using scanning tunneling spectroscopy. We observed edge states at zigzag edges, edge resonances at armchair edges, and bandgap-like features in the bulk.

  14. Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure.

    Science.gov (United States)

    Hwang, Beomyong; Hwang, Jeongwoon; Yoon, Jong Keon; Lim, Sungjun; Kim, Sungmin; Lee, Minjun; Kwon, Jeong Hoon; Baek, Hongwoo; Sung, Dongchul; Kim, Gunn; Hong, Suklyun; Ihm, Jisoon; Stroscio, Joseph A; Kuk, Young

    2016-08-09

    Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recent transport measurement demonstrated the presence of a bandgap in a graphene layer where the asymmetry was introduced by placing a graphene layer on a hexagonal boron nitride (h-BN) substrate. Similar bandgap has been observed in graphene layers on metal substrates by local probe measurements; however, this phenomenon has not been observed in graphene layers on a near-insulating substrate. Here, we present bulk bandgap-like features in a graphene layer epitaxially grown on an h-BN substrate using scanning tunneling spectroscopy. We observed edge states at zigzag edges, edge resonances at armchair edges, and bandgap-like features in the bulk.

  15. High brightness laser-diode device emitting 500 W from a 200 μm/NA0.22 fiber

    Science.gov (United States)

    Junhong, Yu; Linhui, Guo; Hualing, Wu; Zhao, Wang; Hao, Tan; Songxin, Gao; Deyong, Wu; Kai, Zhang

    2016-06-01

    A practical method of achieving high brightness and high power fiber-coupled laser-diode device is demonstrated both by experiment and ZEMAX software simulation, which is obtained by technologies of precision beam collimation, free space beam combining and polarization beam combining based on mini-bar diode laser chip. Using this method, fiber-coupled laser-diode module output power from the multimode fiber with 200 μm core diameter and 0.22 numerical aperture (NA) could reach 528 W, equalizing brightness is 11.0 MW/(cm2 sr) and electro-optical efficiency (defined as fiber output power divided by voltage and current of the module) is 43.0%. By this method, much wider applications of fiber-coupled laser-diode are anticipated.

  16. Platform for enhanced light-graphene interaction length and miniaturizing fiber stereo-devices

    CERN Document Server

    Xu, Fei; Chen, Jin-hui; Chen, Ye; Lu, Yan-qing

    2014-01-01

    Sufficient light-matter interactions are important for waveguide-coupled graphene optoelectronic devices. Using a microfiber-based lab-on-a-rod technique, we present a platform for ultra-long light-graphene interaction and design graphene-integrated helical microfiber (MF) devices. Using this approach, we experimentally demonstrate an in-line stereo polarizer by wrapping an MF on a rod pretreated with a graphene sheet. The device operates as a broadband (450 nm wavelength) polarizer capable of achieving an extinction ratio (ER) as high as ~8 dB/coil in the telecommunication band. Furthermore, we extend this approach to successfully demonstrate a high-Q graphene-based single-polarization resonator, which operates with an ER of ~11 dB with excellent suppression of polarization noise. The fiber-coil resonator shows great potential for sensing applications and gyro-integration. By specializing the rod surface and coil geometry, we believe the preliminary results reported herein could contribute to advancing the r...

  17. High power fiber delivery for laser ignition applications.

    Science.gov (United States)

    Yalin, Azer P

    2013-11-01

    The present contribution provides a concise review of high power fiber delivery research for laser ignition applications. The fiber delivery requirements are discussed in terms of exit energy, intensity, and beam quality. Past research using hollow core fibers, solid step-index fibers, and photonic crystal and bandgap fibers is summarized. Recent demonstrations of spark delivery using large clad step-index fibers and Kagome photonic bandgap fibers are highlighted.

  18. Resonant filtered fiber amplifiers

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard; Laurila, Marko; Olausson, Christina Bjarnal Thulin

    2013-01-01

    In this paper we present our recent result on utilizing resonant/bandgap fiber designs to achieve high performance ytterbium doped fiber amplifers for achieving diffraction limited beam quality in large mode area fibers, robust bending performance and gain shaping for long wavelength operation...

  19. Structural design of a newly developed pediatric circulatory assist device for Fontan circulation by using shape memory alloy fiber.

    Science.gov (United States)

    Shiraishi, Y; Sugai, T K; Tanaka, A; Yoshizawa, M; Yambe, T; Yamada, A; Omran, M H; Shiga, T; Kitano, T; Kamiya, K; Mochizuki, S; Miura, H; Homma, D; Yamagishi, M

    2011-01-01

    Total cavopulmonary connection (TCPC) is commonly applied for the surgical treatment of congenital heart disease such as single ventricle in pediatric patients. Patients with no ventricle in pulmonary circulation are treated along with Fontan algorithm, in which the systemic venous return is diverted directly to the pulmonary artery without passing through subpulmonary ventricle. In order to promote the pulmonary circulation after Fontan procedure, we developed a newly designed pulmonary circulatory assist device by using shape memory alloy fibers. We developed a pulmonary circulatory assist device as a non-blood contacting mechanical support system in pediatric patients with TCPC. The device has been designed to be installed like a cuff around the ePTFE TCPC conduit, which can contract from outside. We employed a covalent type functional anisotropic shape memory alloy fiber (Biometal, Toki Corporation, Tokyo Japan) as a servo actuator of the pulmonary circulatory assist device. The diameter of this fiber was 100 microns, and its contractile frequency was 2-3 Hz. Heat generation with electric current contracts these fibers and the conduit. The maximum contraction ratio of this fiber is about 7% in length. In order to extend its contractile ratio, we fabricated and installed mechanical structural units to control the length of fibers. In this study, we examined basic contractile functions of the device in the mock system. As a result, the internal pressure of the conduit increased to 63 mmHg by the mechanical contraction under the condition of 400 msec-current supply in the mock examination with the overflow tank of 10 mmHg loading.

  20. New cold-fiber headspace solid-phase microextraction device for quantitative extraction of polycyclic aromatic hydrocarbons in sediment.

    Science.gov (United States)

    Ghiasvand, Ali Reza; Hosseinzadeh, Shokouh; Pawliszyn, Janusz

    2006-08-18

    A new automated headspace solid-phase microextraction (HS-SPME) sampling device was developed, with the capability of heating the sample matrix and simultaneously cooling the fiber coating. The device was evaluated for the quantitative extraction of polycyclic aromatic hydrocarbons (PAHs) from solid matrices. The proposed device improves the efficiency of the release of analytes from the matrix, facilitates the mass transfer into the headspace and significantly increases the partition coefficients of the analytes, by creating a temperature gap between the cold-fiber (CF) coating and the hot headspace. The reliability and applicability of previously reported cold-fiber devices are significantly enhanced by this improvement. In addition, it can be easily adopted for full automation of extraction, enrichment and introduction of different samples using commercially available autosampling devices. Sand samples spiked with PAHs were used as solid matrices and the effect of different experimental parameters were studied, including the extraction temperature, extraction time, moisture content, and the effect of sonication and modifier under optimal experimental conditions, linear calibration curves were obtained in the range of 0.0009-1000 ng/g, with regression coefficients higher than 0.99 and detection limits that ranged from 0.3 to 3 pg/g. Reproducible, precise and high throughput extraction, monitoring and quantification of PAHs were achieved with the automated cold-fiber headspace solid-phase microextraction (CF-HS-SPME) device coupled to GC-flame ionization detection. Determination of PAHs in certified reference sediments using the proposed approach exhibited acceptable agreement with the standard values.

  1. Controlling methods of a newly developed extra aortic counter-pulsation device using shape memory alloy fibers.

    Science.gov (United States)

    Hashem, Mohamed O; Yamada, A; Tsuboko, Y; Muira, H; Homma, D; Shiraishi, Y; Yambe, T

    2013-01-01

    Diastolic counter-pulsation has been used to provide circulatory augmentation for short term cardiac support. The success of intra-aortic balloon pump (IABP) therapy has generated interest in long term counter-pulsation strategies to treat heart failure patients. The authors have been developing a totally implantable extra aortic pulsation device for the circulatory support of heart failure patients, using 150 µm Ni-Ti anisotropic shape memory alloy (SMA) fibers. These fibers contract by Joule heating with an electric current supply. The special features of our design are as follow: non blood contacting, extra aortic pulsation function synchronizing with the native heart, a wrapping mechanical structure for the aorta in order to achieve its assistance as the aortomyoplsty and the extra aortic balloon pump. The device consisted of rubber silicone wall plates, serially connected for radial contraction. We examined the contractile function of the device, as well as it controlling methods; the phase delay parameter and the pulse width modulation, in a systemic mock circulatory system, with a pneumatically driven silicone left ventricle model, arterial rubber tubing, a peripheral resistance unit, and a venous reservoir. The device was secured around the aortic tubing with a counter-pulsation mode of 1:4 against the heartbeat. Pressure and flow waveforms were measured at the aortic outflow, as well as its driving condition of the contraction phase width and the phase delay. The device achieved its variable phase control for co-pulsation or counter-pulsation modes by changing the phase delay of the SMA fibers. Peak diastolic pressure significantly augmented, mean flow increased (p<0.05) according to the pulse width modulation. Therefore the newly developed extra aortic counter-pulsation device using SMA fibers, through it controlling methods indicated its promising alternative extra aortic approach for non-blood contacting cardiovascular circulatory support.

  2. Vaporization and coagulation potentials of the new electrosurgical rollerbar devices for transurethral prostatectomy as compared to contact laser fibers

    Science.gov (United States)

    van Swol, Christiaan F. P.; Hillenius, Robert-Jan; van Vliet, Remco J.; Verdaasdonck, Rudolf M.; Boon, Tom A.

    1996-05-01

    Laser prostatectomy is at present an established alternative for transurethral electroresection of the prostate (TUR-P). To compete with the different laser techniques, new electrosurgical modalities were developed as replacement for the standard electrosurgery tools for TUR-P. These modalities consist of a grooved cylinder fitted at the end of a TUR-P-element and are designed to combine both vaporization and coagulation in one device. The aim of this study was to investigate the potentials of the new 'rollerbar' devices and compare them with contact laser devices. Four different 'rollerbars' (Ciron, Storz and Prosurg), standard rollerball (Storz), and contact fibers (SLT) were applied to bovine myocard tissue submerged in glycine (electro) or saline (laser). The Valley Laboratory Force 40 and Force 300 were used as electrosurgical units; an MBB 4060 as Nd:YAG laser. Power settings ranged from 100 to 300 Watt (pure cut mode) for the electrosurgery device. The laser settings ranged from 10 to 60 Watt. The devices were moved over the tissue with a constant speed, while constant force was applied. The direct thermal effect of the devices was studied with a special thermal imaging technique on phantom tissue. Results show the vaporizing and coagulating power of the different devices. The rollerball (adjusted to high electrical power, i.e., 200 Watt) and the contact fibers provide similar vaporizing potential as the special-developed 'rollerbar' devices. Coagulation, necessary for hemostasis, is in all cases limited to a depth of about 2 mm. Increasing the electrical power from 200 to 300 watt only slightly increased the affected volume. The presented 'rollerbars' have a clear vaporizing and coagulating effect on tissue. The standard rollerball and contact laser fibers show similar capacities as the special-designed rollerbars.

  3. Photonic bandgap structures

    CERN Document Server

    Marco, Pisco; Antonello, Cutolo

    2012-01-01

    This E-Book covers the research and the development of a novel generation of photonic devices for sensing applications. Key features of this book include a brief review of basic PhCs related design and fabrication concepts, a selection of crossover topics for the development of novel technological platforms for physical, chemical and biological sensing and a description of the main PhCs sensors to date by representing many of the exciting sensing applications that utilize photonic crystal structures.

  4. Carbon Nanotube-Poly(vinylalcohol) Nanocomposite Film Devices: Applications for Femtosecond Fiber Laser Mode Lockers and Optical Amplifier Noise Suppressors

    Science.gov (United States)

    Sakakibara, Youichi; Rozhin, Aleksey G.; Kataura, Hiromichi; Achiba, Yohji; Tokumoto, Madoka

    2005-04-01

    We fabricated single-wall carbon nanotube (SWNT)/poly(vinylalcohol) (PVA) nanocomposite freestanding films and examined their application in devices in which the saturable absorption of SWNTs at near-infrared optical telecommunication wavelengths can be utilized. In a passively mode-locked fiber laser, we integrated a 30-μm-thick SWNT/PVA film into a fiber connection adaptor with the film sandwiched by a pair of fiber ferrules. A ring fiber laser with a SWNT/PVA saturable absorber was operated very easily in the mode-locked short-pulse mode with a pulse width of about 500 fs. Reproducible stable device performance was confirmed. In examining noise suppression for optical amplifiers, mixed light of semiconductor amplified spontaneous emission (ASE) source and 370 fs laser pulses was passed through a 100-μm-thick SWNT/PVA film. The transmission loss of the femtosecond pulse light was smaller than that of the ASE light. This proved that the SWNT/PVA film has the ability to suppress ASE noise.

  5. Design of a device for pumping a double-clad fiber laser with a laser-diode bar.

    Science.gov (United States)

    Zenteno, L A

    1994-11-01

    Pumping rare-earth-doped double-clad fiber lasers with GaAlAs laser-diode bars typically requires one to transform a 1-cm-long one-dimensional linear array of tens of multimode laser-diode sources into atwo-dimensional oblong cross section that approximately matches the fiber's first cladding shape. I describe the design of a device, henceforth called a high-brightness geometric transformer, that uses a cylindrical microlens to image the laser-diode bar near field onto a linear array of soft-glass, thin-clad, rectangular fibers. In turn, the fibers output ends are arranged to form a stack that matches the required first cladding shape. For a typical laser-diode bar with a brightness of 25 mW·µm(-2)·sr(-1), the geometric transformer output brightness is 0.6 mW·µm(-2)·sr(-1), i.e., there is a 40× intermediate loss of brightness. If the output of the geometric transformer is used to pump a Nd-doped double-clad fiber laser, anoverall brightness gain of 340× can be achieved.

  6. Photonic Bandgaps in Photonic Molecules

    Science.gov (United States)

    Smith, David D.; Chang, Hongrok; Gates, Amanda L.; Fuller, Kirk A.; Gregory, Don A.; Witherow, William K.; Paley, Mark S.; Frazier, Donald O.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    This talk will focus on photonic bandgaps that arise due to nearly free photon and tight-binding effects in coupled microparticle and ring-resonator systems. The Mie formulation for homogeneous spheres is generalized to handle core/shell systems and multiple concentric layers in a manner that exploits an analogy with stratified planar systems, thereby allowing concentric multi-layered structures to be treated as photonic bandgap (PBG) materials. Representative results from a Mie code employing this analogy demonstrate that photonic bands arising from nearly free photon effects are easily observed in the backscattering, asymmetry parameter, and albedo for periodic quarter-wave concentric layers, though are not readily apparent in extinction spectra. Rather, the periodicity simply alters the scattering profile, enhancing the ratio of backscattering to forward scattering inside the bandgap, in direct analogy with planar quarter-wave multilayers. PBGs arising from tight-binding may also be observed when the layers (or rings) are designed such that the coupling between them is weak. We demonstrate that for a structure consisting of N coupled micro-resonators, the morphology dependent resonances split into N higher-Q modes, in direct analogy with other types of oscillators, and that this splitting ultimately results in PBGs which can lead to enhanced nonlinear optical effects.

  7. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2013-07-03

    Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

  8. Towards mid-infrared fiber-optic devices and systems for sensing, mapping and imaging

    Science.gov (United States)

    Jayasuriya, D.; Wilson, B.; Furniss, D.; Tang, Z.; Barney, E.; Benson, T. M.; Seddon, A. B.

    2016-03-01

    Novel chalcogenide glass-based fiber opens up the mid-infrared (MIR) range for real-time monitoring and control in medical diagnostics and chemical processing. Fibers with long wavelength cut-off are of interest here. Sulfide, selenide and telluride based chalcogenide glass are candidates, but there are differences in their glass forming region, thermal stability and in the short and long wavelength cut-off positions. In general sulfide and selenide glasses have greater glass stability, but shorter long-wavelength cut-off edge, compared to telluride glasses; selenide-telluride glasses are a good compromise. Low optical loss selenide-telluride based long wavelength fibers could play a substantial role in improving medical diagnostic systems, chemical sensing, and processing, and in security and agriculture. For biological tissue, the molecular finger print lies between ~3-15 μm wavelengths in the MIR region. Using MIR spectral mapping, information about diseased tissue may be obtained with improved accuracy and in vivo using bright broadband MIR super-continuum generation (SCG) fiber sources and low optical loss fiber for routing. The Ge-As-Se-Te chalcogenide glass system is a potential candidate for both MIR SCG and passive-routing fiber, with good thermal stability, wide intrinsic transparency from ~1.5 to 20 μm and low phonon energy. This paper investigates Ge-As-Se-Te glass system pairs for developing high numerical aperture (NA) small-core, step-index optical fiber for MIR SCG and low NA passive step-index optical fiber for an in vivo fiber probe. Control of fiber geometry of small-core optical fiber and methods of producing the glass material are also included in this paper.

  9. Bandgap modulation of carbon nanotubes by encapsulated metallofullerenes

    Science.gov (United States)

    Lee, Jhinhwan; Kim, H.; Kahng, S.-J.; Kim, G.; Son, Y.-W.; Ihm, J.; Kato, H.; Wang, Z. W.; Okazaki, T.; Shinohara, H.; Kuk, Young

    2002-02-01

    Motivated by the technical and economic difficulties in further miniaturizing silicon-based transistors with the present fabrication technologies, there is a strong effort to develop alternative electronic devices, based, for example, on single molecules. Recently, carbon nanotubes have been successfully used for nanometre-sized devices such as diodes, transistors, and random access memory cells. Such nanotube devices are usually very long compared to silicon-based transistors. Here we report a method for dividing a semiconductor nanotube into multiple quantum dots with lengths of about 10nm by inserting Gd@C82 endohedral fullerenes. The spatial modulation of the nanotube electronic bandgap is observed with a low-temperature scanning tunnelling microscope. We find that a bandgap of ~0.5eV is narrowed down to ~0.1eV at sites where endohedral metallofullerenes are inserted. This change in bandgap can be explained by local elastic strain and charge transfer at metallofullerene sites. This technique for fabricating an array of quantum dots could be used for nano-electronics and nano-optoelectronics.

  10. Design and Fabrication of Calibration Device for Scintillating Fibers of Tagger Microscope: For use in GlueX's QCD Experiment

    Science.gov (United States)

    Briere, Emily

    2012-10-01

    For decades, scientists have struggled to understand the chromo-electromagnetic field which confines quarks and gluons within the hadron. GlueX is a QCD experiment centered at Jefferson Lab, Virginia, seeking to better understand this gluonic field by exciting it and mapping the spectrum of exotic hybrid mesons that it generates. The experiment uses coherent bremsstrahlung radiation to produce a beam of photons, which due to their polarity act as virtual vector mesons. When incident on a liquid hydrogen target, these mesons are expected to form exotic hybrid mesons. Such particles quickly decay into new particles which are captured in a solenoid detector. The decays can then be reconstructed to examine the properties of the original exotic hybrid meson, although the initial energy of the photon is required to draw meaningful conclusions. The post-bremsstrahlung degraded electrons are bent from the main beam into the tagger microscope where they strike an array of scintillating optical fibers. Given the correlation between momentum and radial bend, the Silicon Photmultiplier sensors attached to the optical fibers are able to ``tag'' the electrons', and thus the photons', initial energies based on which fibers were hit. Providing central data for GlueX, the tagger microscope must be accurate. This paper details the design and fabrication of a scintillating fiber calibration device that moves horizontally above fiber bundles, using a green laser diode to direct light pulses into the fibers. This calibration method has been tested mechanically and via a Monte Carlo Matlab simulation, and has proven to be effective.

  11. Remote-controlled delivery of CO via photoactive CO-releasing materials on a fiber optical device.

    Science.gov (United States)

    Gläser, Steve; Mede, Ralf; Görls, Helmar; Seupel, Susanne; Bohlender, Carmen; Wyrwa, Ralf; Schirmer, Sina; Dochow, Sebastian; Reddy, Gandra Upendar; Popp, Jürgen; Westerhausen, Matthias; Schiller, Alexander

    2016-08-16

    Although carbon monoxide (CO) delivery materials (CORMAs) have been generated, remote-controlled delivery with light-activated CORMAs at a local site has not been achieved. In this work, a fiber optic-based CO delivery system is described in which the photoactive and water insoluble CO releasing molecule (CORM) manganese(i) tricarbonyl [(OC)3Mn(μ3-SR)]4 (R = nPr, 1) has been non-covalently embedded into poly(l-lactide-co-d/l-lactide) and poly(methyl methacrylate) non-woven fabrics via the electrospinning technique. SEM images of the hybrid materials show a porous fiber morphology for both polymer supports. The polylactide non-woven fabric was attached to a fiber optical device. In combination with a laser irradiation source, remote-controlled and light-triggered CO release at 405 nm excitation wavelength was achieved. The device enabled a high flexibility of the spatially and timely defined application of CO with the biocompatible hybrid fabric in aqueous media. The rates of liberated CO were adjusted with the light intensity of the laser. CO release was confirmed via ATR-IR spectroscopy, a portable electrochemical CO sensor and a heterogeneous myoglobin assay.

  12. Very Small Bandgap π-Conjugated Polymers with Extended Thienoquinoids.

    Science.gov (United States)

    Kawabata, Kohsuke; Saito, Masahiko; Osaka, Itaru; Takimiya, Kazuo

    2016-06-22

    The introduction of quinoidal character to π-conjugated polymers is one of the effective approaches to reducing the bandgap. Here we synthesized new π-conjugated polymers (PBTD4T and PBDTD4T) incorporating thienoquinoids 2,2'-bithiophene-5,5'-dione (BTD) and benzo[1,2-b:4,5-b']dithiophene-2,6-dione (BDTD) as strong electron-deficient (acceptor) units. PBTD4T showed a deep LUMO energy level of -3.77 eV and a small bandgap of 1.28 eV, which are similar to those of the analog using thieno[3,2-b]thiophene-2,5-dione (TTD) (PTTD4T). PBDTD4T had a much deeper LUMO energy level of -4.04 eV and a significantly smaller bandgap of 0.88 eV compared to those of the other two polymers. Interestingly, PBDTD4T showed high transparency in the visible region. The very small bandgap of PBDTD4T can be rationalized by the enhanced contribution of the resonance backbone structure in which the p-benzoquinodimethane skeleton in the BDTD unit plays a crucial role. PBTD4T and PBDTD4T exhibited ambipolar charge transport with more balanced mobilities between the hole and the electron than PTTD4T. We believe that the very small bandgap, i.e., the high near-infrared activity, as well as the well-balanced ambipolar property of the π-conjugated polymers based on these units would be of particular interest in the fabrication of next-generation organic devices.

  13. Optimal design of tunable phononic bandgap plates under equibiaxial stretch

    Science.gov (United States)

    Hedayatrasa, Saeid; Abhary, Kazem; Uddin, M. S.; Guest, James K.

    2016-05-01

    Design and application of phononic crystal (PhCr) acoustic metamaterials has been a topic with tremendous growth of interest in the last decade due to their promising capabilities to manipulate acoustic and elastodynamic waves. Phononic controllability of waves through a particular PhCr is limited only to the spectrums located within its fixed bandgap frequency. Hence the ability to tune a PhCr is desired to add functionality over its variable bandgap frequency or for switchability. Deformation induced bandgap tunability of elastomeric PhCr solids and plates with prescribed topology have been studied by other researchers. Principally the internal stress state and distorted geometry of a deformed phononic crystal plate (PhP) changes its effective stiffness and leads to deformation induced tunability of resultant modal band structure. Thus the microstructural topology of a PhP can be altered so that specific tunability features are met through prescribed deformation. In the present study novel tunable PhPs of this kind with optimized bandgap efficiency-tunability of guided waves are computationally explored and evaluated. Low loss transmission of guided waves throughout thin walled structures makes them ideal for fabrication of low loss ultrasound devices and structural health monitoring purposes. Various tunability targets are defined to enhance or degrade complete bandgaps of plate waves through macroscopic tensile deformation. Elastomeric hyperelastic material is considered which enables recoverable micromechanical deformation under tuning finite stretch. Phononic tunability through stable deformation of phononic lattice is specifically required and so any topology showing buckling instability under assumed deformation is disregarded. Nondominated sorting genetic algorithm (GA) NSGA-II is adopted for evolutionary multiobjective topology optimization of hypothesized tunable PhP with square symmetric unit-cell and relevant topologies are analyzed through finite

  14. Luminescence in Conjugated Molecular Materials under Sub-bandgap Excitation

    Energy Technology Data Exchange (ETDEWEB)

    So, Franky [University of Florida

    2014-05-08

    Light emission in semiconductors occurs when they are under optical and electrical excitation with energy larger than the bandgap energy. In some low-dimensional semiconductor heterostructure systems, this thermodynamic limit can be violated due to radiative Auger recombination (AR), a process in which the sub-bandgap energy released from a recombined electron-hole pair is transferred to a third particle leading to radiative band-to-band recombination.1 Thus far, photoluminescence up-conversion phenomenon has been observed in some low dimensional semiconductor systems, and the effect is very weak and it can only be observed at low temperatures. Recently, we discovered that efficient electroluminescence in poly[2-methoxy-5-(2’-ethylhexyloxy)-1, phenylenevinylene] (MEH-PPV) polymer light-emitting devices (PLEDs) at drive voltages below its bandgap voltage could be observed when a ZnO nanoparticles (NPs) electron injection layer was inserted between the polymer and the aluminum electrode. Specifically, emitted photons with energy of 2.13 eV can be detected at operating voltages as low as 1.2 V at room temperature. Based on these data, we propose that the sub-bandgap turn-on in the MEH-PPV device is due to an Auger-assisted energy up-conversion process. The significance of this discovery is three-fold. First, radiative recombination occurs at operating voltages below the thermodynamic bandgap voltage. This process can significantly reduce the device operating voltage. For example, the current density of the device with the ZnO NC layer is almost two orders of magnitude higher than that of the device without the NC layer. Second, a reactive metal is no longer needed for the cathode. Third, this electroluminescence up-conversion process can be applied to inorganic semiconductors systems as well and their operation voltages of inorganic LEDs can be reduced to about half of the bandgap energy. Based on our initial data, we propose that the sub-bandgap turn-on in MEH

  15. Small bandgap polymers for organic solar cells (polymer material development in the last 5 years)

    NARCIS (Netherlands)

    Kroon, Renee; Lenes, Martijn; Hummelen, Jan C.; Blom, Paul W.M.; Boer, Bert de

    2008-01-01

    During the last decade the field of polymer photovoltaics has seen a tremendous improvement in both device efficiency and understanding of the underlying physical processes. One has come to a point in which the prototypical large bandgap material system P3HT:PCBM is nearing optimal device performanc

  16. Composition and bandgap-graded semiconductor alloy nanowires.

    Science.gov (United States)

    Zhuang, Xiujuan; Ning, C Z; Pan, Anlian

    2012-01-03

    Semiconductor alloy nanowires with spatially graded compositions (and bandgaps) provide a new material platform for many new multifunctional optoelectronic devices, such as broadly tunable lasers, multispectral photodetectors, broad-band light emitting diodes (LEDs) and high-efficiency solar cells. In this review, we will summarize the recent progress on composition graded semiconductor alloy nanowires with bandgaps graded in a wide range. Depending on different growth methods and material systems, two typical nanowire composition grading approaches will be presented in detail, including composition graded alloy nanowires along a single substrate and those along single nanowires. Furthermore, selected examples of applications of these composition graded semiconductor nanowires will be presented and discussed, including tunable nanolasers, multi-terminal on-nanowire photodetectors, full-spectrum solar cells, and white-light LEDs. Finally, we will make some concluding remarks with future perspectives including opportunities and challenges in this research area.

  17. Design techniques for superposition of acoustic bandgaps using fractal geometries

    CERN Document Server

    Castiñeira-Ibáñez, S; Sánchez-Pérez, J V; Garcia-Raffi, L M

    2010-01-01

    Research into properties of heterogeneous artificial materials, consisting of arrangements of rigid scatterers embedded in a medium with different elastic properties, has been intense throughout last two decades. The capability to prevent the transmission of waves in predetermined bands of frequencies -called bandgaps- becomes one of the most interesting properties of these systems, and leads to the possibility of designing devices to control wave propagation. The underlying physical mechanism is destructive Bragg interference. Here we show a technique that enables the creation of a wide bandgap in these materials, based on fractal geometries. We have focused our work in the acoustic case where these materials are called Phononic/Sonic Crystals (SC) but, the technique could be applied any types of crystals and wave types in ranges of frequencies where the physics of the process is linear.

  18. The Search for Sub-Bandgap Optoelectronic Response in Silicon Hyperdoped with Gold

    Science.gov (United States)

    Mailoa, Jonathan; Akey, Austin; Mathews, Jay; Hutchinson, David; Simmons, Christie; Sullivan, Joseph; Winkler, Mark; Recht, Dan; Persans, Peter; Warrender, Jeffrey; Aziz, Michael; Buonassisi, Tonio

    2013-03-01

    Deep-level dopants have been long known as the lifetime-killer in microelectronic devices. Nevertheless, it has been shown that deep-level donor can facilitate strong absorption of light with energy below the semiconductor bandgap. Due to this strong sub-bandgap absorption, it is possible to engineer silicon devices exhibiting sub-bandgap optoelectronic response, such as silicon-based infrared photodetectors and intermediate-band solar cells. In this work, we show the optoelectronic response of silicon doped with a gold concentration surpassing the equilibrium solubility limit (gold-hyperdoped silicon, Au:Si). We fabricated Au:Si by ion implantation followed by nanosecond pulse laser melting, achieving a gold dopant concentration of over 1019 cm-3. UV-VIS spectrophotometry was performed to measure sub-bandgap light absorption in the Au:Si layer. Our samples with the highest gold concentration have 10-15% absorption of sub-bandgap light. We will present and discuss the sub-bandgap optoelectronic response of this gold-doped silicon.

  19. Bandgap engineering of graphene decorated with randomly distributed ZnO nano-seed

    Science.gov (United States)

    Al-Amin, Chowdhury; Vabbina, Phani Kiran; Karabiyik, Mustafa; Sinha, Raju; Pala, Nezih

    2016-05-01

    In this paper, we have experimentally demonstrated the engineering of semi-metal single layer CVD Graphene's bandgap by decorating with randomly distributed ZnO nano-seed grown by sonication of Zinc acetate dehydrate. The proximity of nanoparticles and Graphene breaks Graphene's sublattice symmetry and opens-up a bandgap. The 2-D/G ratio of Raman spectroscopy of decorated Graphene along with a peak at 432.39 cm-1 confirmed presence of ZnO on single layer Graphene. The introduced bandgap was measured from the slope of Arrhenius plot. Graphene with significant bandgap introduced by the proposed methods could be used for devices intended for digital and logic applications.

  20. Phase Conjugated and Transparent Wavelength Conversions of Nyquist 16-QAM Signals Employing a Single-Layer Graphene Coated Fiber Device.

    Science.gov (United States)

    Hu, Xiao; Zeng, Mengqi; Long, Yun; Liu, Jun; Zhu, Yixiao; Zou, Kaiheng; Zhang, Fan; Fu, Lei; Wang, Jian

    2016-03-02

    We fabricate a nonlinear optical device based on a fiber pigtail cross-section coated with a single-layer graphene grown by chemical vapor deposition (CVD) method. Using the fabricated graphene-assisted nonlinear optical device and employing Nyquist 16-ary quadrature amplitude modulation (16-QAM) signal, we experimentally demonstrate phase conjugated wavelength conversion by degenerate four-wave mixing (FWM) and transparent wavelength conversion by non-degenerate FWM in graphene. We study the conversion efficiency as functions of the pump power and pump wavelength and evaluate the bit-error rate (BER) performance. We also compare the time-varying symbol sequence for graphene-assisted phase conjugated and transparent wavelength conversions of Nyquist 16-QAM signal.

  1. Magnetostriction measuring device based on an optical fiber sensor with an annular photodiode.

    Science.gov (United States)

    de Manuel, V; Del Real, R P; Alonso, J; Guerrero, H

    2007-09-01

    A new simple and sensitive dilatometer to measure magnetostriction of ribbons has been developed, based on an optical fiber sensor using an annular photodiode. The optical fiber is used bidirectionally, both for emission and detection of light, simplifying the access to the ribbon under test. The working principle is based on the measurement by reflection of the longitudinal displacement of the ribbon end. For a Vitroperm amorphous ribbon of 100 mm length, 21 microm thickness, and 8.3 mm width, a displacement of 2.571 microm with a maximum uncertainty of 8 nm has been obtained.

  2. Study of lineal and non-lineal transmission of an optical fiber Sagnac interferometer as a bidirectional device

    Energy Technology Data Exchange (ETDEWEB)

    Ramos-Beltran, J [Benemerita Universidad Autonoma de Puebla, Facultad de Ciencias de la Electronica (Mexico); Beltran-Perez, G; Castillo-Mixcoatl, J; Munoz-Aguirre, S [Benemerita Universidad Autonoma de Puebla, Facultad de Ciencias Fisco-Matematicas (Mexico); Zaca-Moran, P [Benemerita Universidad Autonoma de Puebla, Fisicoquimica de Materiales, ICUAP (Mexico); Felipe, C, E-mail: squall_rb@hotmail.com [Departamento de biociencias e ingenieria, CIIEMAD, Instituto Politecnico Nacional (Mexico)

    2011-01-01

    The optical fiber Sagnac interferometer is a versatile system that has been investigated for a variety of applications such as optical switchers, filters, demultiplexers and passive mode-locked laser. In many cases, this arrangement is designed using a symmetrical coupler with two of their ports connected making a loop and generally the analysis have been focused in the transmission of the signal propagated in only one direction. Therefore in the present work a complementary study of the system considering the analysis for the lineal and non-lineal transmission as a bidirectional device has been performed. The experimental setup consists of different optical fiber lengths inside the cavity loop (between 100 and 500 m) with highly twisted singlemode fiber, a quarter wave retarder placed asymmetrically in one arm and a 50/50 coupler. The results have shown that for low optical powers, it is possible to adjust the system transmission in both propagation directions with the rotation of the retarder wave. On the other hand, in high optical power levels, this arrangement showed that the transmission increases slowly for the case when both the input and the output beams have the same polarization. This behavior can be used for pedestal suppression in a light pulse. Furthermore, for the case when the output signal polarization is orthogonal respect to the input one, the transmission changes quite fast. This effect can be used for applications such as the passive mode-locking.

  3. Eat-by-light: fiber-optic and micro-optic devices for food safety and quality assessment

    Science.gov (United States)

    Mignani, A. G.; Ciaccheri, L.; Cucci, C.; Mencaglia, A. A.; Cimato, A.; Attilio, C.; Thienpont, H.; Ottevaere, H.; Paolesse, R.; Mastroianni, M.; Monti, D.; Buonocore, G.; Del Nobile, A.; Mentana, A.; Dall'Asta, C.; Faccini, A.; Galaverna, G.; Dossena, A.

    2007-07-01

    A selection of fiber-optic and micro-optic devices is presented designed and tested for monitoring the quality and safety of typical foods, namely the extra virgin olive oil, the beer, and the milk. Scattered colorimetry is used for the authentication of various types of extra virgin olive oil and beer, while a fiber-optic-based device for UV-VIS-NIR absorption spectroscopy is exploited in order to obtain the hyperspectral optical signature of olive oil. This is done not only for authentication purposes, but also so as to correlate the spectral data with the content of fatty acids that are important nutritional factors. A micro-optic sensor for the detection of olive oil aroma is presented. It is capable of distinguishing different ageing levels of extra virgin olive oil. It shows effective potential for acting as a smart cap of bottled olive oil in order to achieve a non-destructive olfactory perception of oil ageing. Lastly, a compact portable fluorometer is experimented for the rapid monitoring of the carcinogenic M1 aflatoxin in milk.

  4. Eat-by-light fiber-optic and micro-optic devices for food quality and safety assessment

    Science.gov (United States)

    Mignani, A. G.; Ciaccheri, L.; Cucci, C.; Mencaglia, A. A.; Cimato, A.; Attilio, C.; Thienpont, H.; Ottevaere, H.; Paolesse, R.; Mastroianni, M.; Monti, D.; Buonocore, G.; Del Nobile, A.; Mentana, A.; Grimaldi, M. F.; Dall'Asta, C.; Faccini, A.; Galaverna, G.; Dossena, A.

    2007-06-01

    A selection is presented of fiber-optic and micro-optic devices that have been designed and tested for guaranteeing the quality and safety of typical foods, such as extra virgin olive oil, beer, and milk. Scattered colorimetry is used to authenticate various types of extra virgin olive oil and beer, while a fiber-optic-based device for UV-VIS-NIR absorption spectroscopy is exploited in order to obtain the hyperspectral optical signature of olive oil. This is done not only for authentication purposes, but also so as to correlate the spectral data with the content of fatty acids, which are important nutritional factors. A micro-optic sensor for the detection of olive oil aroma that is capable of distinguishing different ageing levels of extra virgin olive oil is also presented. It shows effective potential for acting as a smart cap of bottled olive oil in order to achieve a non-destructive olfactory perception of oil ageing. Lastly, a compact portable fluorometer for the rapid monitoring of the carcinogenic M1 aflatoxin in milk, is experimented.

  5. ZnMgO by APCVD Enabling High-Performance Mid-bandgap CIGS on Polyimide Modules: October 2009--October 2010

    Energy Technology Data Exchange (ETDEWEB)

    Woods, L.

    2011-04-01

    This Pre-Incubator project was designed to increase the 'real world' CIGS based photovoltaic module performance and decrease the Levelized Cost of Energy (LCOE) of systems utilizing those modules compared to our traditional CIGS based photovoltaic modules. This was enabled by a) increasing the CIGS bandgap and b) developing better matched device finishing layers to the mid-bandgap CIGS based photovoltaics; including window and buffer layers (and eventually the TCO). Incremental progress in the novel device performance was demonstrated throughout the program, and ultimately achieved performance results that exceeded the milestones ahead of schedule. Metal-oxide buffer layer devices with mid-bandgap CIGS alloys on polyimide substrates were produced with efficiencies of over 12%. Corresponding mid-bandgap devices with CdS buffers produced over 13% efficient devices. Furthermore, no obvious degradation in the device performance has been observed to date, after proper storage ambient of the different types of unencapsulated devices were identified.

  6. THz waveguides, devices and hybrid polymer-chalcogenide photonic crystal fibers

    DEFF Research Database (Denmark)

    Bao, Hualong; Markos, Christos; Nielsen, Kristian;

    2014-01-01

    In this contribution, we review our recent activities in the design, fabrication and characterization of polymer THz waveguides. Besides the THz waveguides, we finally will also briefly show some of our initial results on a novel hybrid polymer photonic crystal fiber with integrated chalcogenide...

  7. Bandgap tunability at single-layer molybdenum disulphide grain boundaries

    KAUST Repository

    Huang, Yu Li

    2015-02-17

    Two-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties of interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle energy gap to be 2.40±0.05 eV for single-layer, 2.10±0.05 eV for bilayer and 1.75±0.05 eV for trilayer molybdenum disulphide, which were directly grown on a graphite substrate by chemical vapour deposition method. More interestingly, we report an unexpected bandgap tunability (as large as 0.85±0.05 eV) with distance from the grain boundary in single-layer molybdenum disulphide, which also depends on the grain misorientation angle. This work opens up new possibilities for flexible electronic and optoelectronic devices with tunable bandgaps that utilize both the control of two-dimensional layer thickness and the grain boundary engineering.

  8. Power Analysis and Experimental Study of the Fiber Null Coupler with an Acousto-optic Device

    Institute of Scientific and Technical Information of China (English)

    WU Lei; ZHENG Yuan; QI Jiang; PU Hongtu; CHEN Shuqiang

    2002-01-01

    A single-mode fiber acousto-optic (AO) switch based on a null coupler at wavelength of 1.55 μm is reported.According to the coupled mode theory,power distribution of the null coupler with the acoustic-wave is formulated for general case.Excess loss of 0.1 dB and the schematic graph of throughput and coupled power are obtained experimentally.

  9. Method and device for detecting impact events on a security barrier which includes a hollow rebar allowing insertion and removal of an optical fiber

    Science.gov (United States)

    Pies, Ross E.

    2016-03-29

    A method and device for the detection of impact events on a security barrier. A hollow rebar is farmed within a security barrier, whereby the hollow rebar is completely surrounded by the security barrier. An optical fiber passes through the interior of the hollow rebar. An optical transmitter and an optical receiver are both optically connected to the optical fiber and connected to optical electronics. The optical electronics are configured to provide notification upon the detection of an impact event at the security barrier based on the detection of disturbances within the optical fiber.

  10. Tuning the hybridization bandgap by meta-molecules with in-unit interaction

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yongqiang; Li, Yunhui, E-mail: liyunhui@tongji.edu.cn; Wu, Qian; Jiang, Haitao; Zhang, Yewen; Chen, Hong [Key Laboratory of Advanced Micro-Structured Materials, Ministry of Education, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2015-09-07

    In this paper, we demonstrate that the hybridization bandgap (HBG) can be tuned conveniently by deep subwavelength meta-molecules with in-unit interaction. Spontaneous-emission-cancellation-like (SEC-like) effect is realized in a meta-molecule by introducing the destructive interference of two detuned meta-atoms. The meta-atoms consisting of subwavelength zero-index-metamaterial-based resonators are side-coupled to a microstrip. Compared to conventional HBG configurations, the presence of in-unit interaction between meta-atoms provides more flexibility in tuning the bandgap properties, keeping the device volume almost unchanged. Both numerical simulations and microwave experiments confirm that the width, depth, and spectrum shape of HBG can be tuned by simply introducing SEC-like interaction into the meta-molecule. Due to these features, our design may be promising to be applied in microwave or optics communications systems with strict limitation of device volume and flexible bandgap properties.

  11. Surface band-gap narrowing in quantized electron accumulation layers.

    Science.gov (United States)

    King, P D C; Veal, T D; McConville, C F; Zúñiga-Pérez, J; Muñoz-Sanjosé, V; Hopkinson, M; Rienks, E D L; Jensen, M Fuglsang; Hofmann, Ph

    2010-06-25

    An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering.

  12. High bandgap III-V alloys for high efficiency optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

    2017-01-10

    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  13. An Azulene-Containing Low Bandgap Small Molecule for Organic Photovoltaics with High Open-Circuit Voltage.

    Science.gov (United States)

    Chen, Yao; Zhu, Youqin; Yang, Daobin; Zhao, Suling; Zhang, Lei; Yang, Lin; Wu, Jianglin; Huang, Yan; Xu, Zheng; Lu, Zhiyun

    2016-10-01

    A simple azulene-containing squaraine dye (AzUSQ) showing bandgap of 1.38 eV and hole mobility up to 1.25×10(-4)  cm(2)  V(-1)  s(-1) was synthesized. With its low bandgap, an organic photovoltaic (OPV) device based on it has been made that exhibits an impressive open-circuit voltages (Voc ) of 0.80 V. Hence, azulene might be a promising structural unit to construct OPV materials with simultaneous low bandgap, high hole mobility and high Voc .

  14. Wide Bandgap Nanostructured Space Photovoltaics Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Firefly, in collaboration with Rochester Institute of Technology, proposes an STTR program for the development of a wide-bandgap GaP-based space solar cell capable...

  15. Fast-light Assisted Four-Wave-Mixing in Photonic Bandgap

    CERN Document Server

    Feng, Cheng; Zhang, Liang; Liu, Jinmei; Zhan, Li

    2014-01-01

    Since the forward and backward waves are coupled with each other and a standing wave with no net propagation of energy is formed in the photonic bandgap, it is a commonsense of basic physics that, any kinds of effects associated with wave propagation including four-wave-mixing (FWM) are thought to be impossible. However, we lay great emphasis here on explaining that this commonsense could be broken under specific circumstances. In this article, we report with the first experimental observation of the energy conversion in the photonic bandgap into other channel via FWM. Owing to the phase manipulation by fast light effect in the photonic bandgap, we manage to achieve the phase-match condition and thus occurred FWM transfer energy into other channels outside the photonic bandgap efficiently. As one-dimensional photonic crystal, simulations on fiber Bragg grating (FBG) with and without fast light were conducted respectively, and an enhanced FWM in photonic bandgap of FBG was observed. The experimental result sho...

  16. Selecting Semiconducting Single-Walled Carbon Nanotubes with Narrow Bandgap Naphthalene Diimide-Based Polymers

    NARCIS (Netherlands)

    Salazar-Rios, Jorge Mario; Gomulya, Widianta; Derenskyi, Vladimir; Yang, Jie; Bisri, Satria Zulkarnaen; Chen, Zhihua; Facchetti, Antonio; Loi, Maria Antonietta

    2015-01-01

    Noncovalent functionalization of carbon nanotubes by wrapping them using pi-conjugated polymers is one of the most promising techniques to sort, separate, and purify semiconducting nanotube species for applications in optoelectronic devices. However, wide energy bandgap polymers commonly used in thi

  17. Polymer solar cells and infrared light emitting diodes : Dual function low bandgap polymer

    NARCIS (Netherlands)

    Winder, C.; Mühlbacher, D.; Neugebauer, H.; Sariciftci, N.S.; Brabec, C.J.; Janssen, R.A.J.; Hummelen, J.C.

    2002-01-01

    Conjugated Polymers with a HOMO-LUMO transition <2eV, i.e. a low bandgap, respectively, have interesting and desired properties for some thin film optoelectronic devices like light emitting diodes and solar cells. In this contribution we present the implementation of the novel copolymer PTPTB, consi

  18. Electrical and Optical Measurements of the Bandgap Energy of a Light-Emitting Diode

    Science.gov (United States)

    Petit, Matthieu; Michez, Lisa; Raimundo, Jean-Manuel; Dumas, Philippe

    2016-01-01

    Semiconductor materials are at the core of electronics. Most electronic devices are made of semiconductors. The operation of these components is well described by quantum physics which is often a difficult concept for students to understand. One of the intrinsic parameters of semiconductors is their bandgap energy E[subscript g]. In the case of…

  19. Endocultivation: metabolism during heterotopic osteoinduction in vivo--monitoring with fiber optic detection devices.

    Science.gov (United States)

    Beck-Broichsitter, Benedicta Elisabeth; Christofzik, David W; Daschner, Frank; Knöchel, Reinhard; Smeets, Ralf; Warnke, Patrick; Wiltfang, Jörg; Becker, Stephan T

    2012-10-01

    Reconstructions of facial bone defects are one of the most challenging aspects in surgical treatment of malignant diseases, large facial traumata, or congenital anomalies. High-level reconstruction techniques are often associated with an elevated morbidity by the harvest of autologous bone grafts from the patient. Tissue engineering techniques may help to solve this problem. The aim of this study was to monitor metabolic processes during cellular colonization of matrices in vivo in an established rat model for endocultivation. After implantation of computer-designed hydroxyapatite scaffolds into the latissimus dorsi muscle of six rats, 100 μg bone morphogenetic protein-2 (BMP-2) was injected twice, in week 1 and 2, directly into the center of the matrices. The development of pH value and oxygen (O₂) saturation inside the matrix was followed by fiber optic detection technique over 8 weeks and analyzed by variance analyses. Bone density measurements were performed by computed tomography as well as histological evaluations. Two weeks after implantation, oxygen supply and pH value measurements had decreased significantly. In the following weeks both parameters increased and stabilized on higher levels. This is the first study reporting a reproducible method to follow metabolic processes during heterotopic osteoinduction in vivo. It was shown that in the beginning of the study pH value and O₂ saturation decreased and it took several weeks to regain physiological levels. This is an important step to further understand the physiological process of bone induction.

  20. Effective absorption coefficient for graded band-gap semiconductors and the expected photocurrent density in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Acevedo, Arturo [CINVESTAV del IPN, Electrical Engineering Department, Avenida IPN No. 2508, 07360 Mexico, D. F. (Mexico)

    2009-01-15

    A simple model for the generation of carriers by photons incident on a (linearly) decreasing band-gap material, such as has been described in recent CIGS solar cells, is developed. The model can be generalized for different cases such as increasing band-gap grading or for having a more complex band-gap profile. The model developed for direct band semiconductors such as CIGS or AlGaAs allows us to define an effective absorption coefficient, so that the ideal photocurrent density can be calculated in a similar manner as for solar cells with non-graded band-gap materials. We show that this model gives completely different results as those expected from intuitive approaches for calculating this ideal photocurrent density. We also show that grading of the band-gap of the absorbing material in solar cells makes the photocurrent less sensitive to the total band-gap change, in such a way that the design of the band-gap variation can be more flexible in order to have other advantages such as higher built-in voltage or higher back surface field in the device structure. (author)

  1. Tunable all-optical devices based on liquid-filled photonic crystal fibers

    DEFF Research Database (Denmark)

    Rosberg, Christian Romer; Bennet, Francis; Neshev, Dragomir N.;

    of discrete and nonlinear light propagation in extended two-dimensional periodic systems. We experimentally demonstrate strongly tunable beam diffraction in a triangular waveguide array created by infiltration of a high index liquid into the cladding holes of a standard PCF, and employ the thermal...... nonlinearity of the liquid to achieve beam self-defocusing at higher light intensity. Based on the observed effects we devise a compact all-optical power limiter device with tunable characteristics. The use of commercially available PCFs in combination with liquid infiltration avoids the need for specialized...... high-precision fabrication procedures, and provides high tunability and nonlinearity at moderate laser powers while taking advantage of a compact experimental setup. The increasingly broad range of PCF structures available could stimulate further efforts in applying them in discrete nonlinear optics...

  2. Frequency conversion through spontaneous degenerate four wave mixing in large mode area hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Olausson, Christina Bjarnal Thulin;

    2014-01-01

    Frequency conversion through spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers. Different FWM processes are observed, phasematching between fiber modes of orthogonal polarization, intermodal phasematching across bandgaps, and intramodal...

  3. Electric gating induced bandgaps and enhanced Seebeck effect in zigzag bilayer graphene ribbons

    Science.gov (United States)

    Vu, Thanh-Tra; Tran, Van-Truong

    2016-08-01

    We theoretically investigate the effect of a transverse electric field generated by side gates and a vertical electric field generated by top/back gates on energy bands and transport properties of zigzag bilayer graphene ribbons (Bernal stacking). Using atomistic tight binding calculations and Green’s function formalism we demonstrate that a bandgap is opened when either field is applied and even enlarged under simultaneous influence of the two fields. Interestingly, although vertical electric fields are widely used to control the bandgap in bilayer graphene, here we show that transverse fields exhibit a more positive effect in terms of modulating a larger range of bandgap and retaining good electrical conductance. The Seebeck effect is also demonstrated to be enhanced strongly—by about 13 times for a zigzag bilayer graphene ribbon with 16 chain lines. These results may motivate new designs of devices made of bilayer graphene ribbons using electric gates.

  4. Universal rule on chirality-dependent bandgaps in graphene antidot lattices.

    Science.gov (United States)

    Liu, Xiaofei; Zhang, Zhuhua; Guo, Wanlin

    2013-04-22

    Graphene with periodically patterned antidots has attracted intense research attention as it represents a facile route to open a bandgap for graphene electronics. However, not all graphene antidot lattices (GALs) can open a bandgap and a guiding rule is missing. Here, through systematic first-principles calculations, it is found that bandgaps in triangular GALs are surprisingly well defined by a chirality vector R = n a1 + ma2 connecting two neighboring antidots, where a1 and a2 are the basis vectors of graphene. The bandgap opens in the GALs with (n-m)mod3 = 0 but remains closed in those with (n-m)mod3 = ±1, reminiscent of the gap-chirality rule in carbon nanotubes. Remarkably, the gap value in GALs allows ample modulation by adjusting the length of chirality vectors, shape and size of the antidots. The gap-chirality relation in GALs stems from the chirality-dependent atomic structures of GALs as revealed by a super-atom model as well as Clar sextet analyses. This chirality-dependent bandgap is further shown to be a generic behavior in any parallelogram GAL and thus serves as an essential stepping stone for experimenters to realize graphene devices by antidot engineering.

  5. The impact of sodium on the sub-bandgap states in CZTSe and CZTS

    Science.gov (United States)

    Gershon, By Talia; Lee, Yun Seog; Mankad, Ravin; Gunawan, Oki; Gokmen, Tayfun; Bishop, Doug; McCandless, Brian; Guha, Supratik

    2015-03-01

    We compare the optically active sub-bandgap states in polycrystalline Cu2ZnSnSe4 (CZTSe) and Cu2ZnSnS4 (CZTS) thin films as a function of sodium content. In all samples studied, we find that CZTSe has a lower concentration of radiative defect-derived states compared to CZTS and that the states are also shallower in CZTSe compared to CZTS. Further, we find that sodium impacts the relative ratios of two sub-bandgap peaks in the 4 K photoluminescence (PL) spectra of CZTSe (one at ˜0.85 eV and another at ˜0.92 eV). We propose that both of these sub-bandgap peaks stem from intrinsic point defects in CZTSe rather than from electronic states introduced by sodium; this is supported by a measurement on a sodium-free single-crystal of CZTSe. We also show that films with stronger emission through the shallower sub-bandgap states at 4 K display room-temperature PL closer to the bandgap energy. For all sodium quantities studied, one broad PL peak is observed in the 4 K PL spectrum of CZTS which also shifts towards the band edge with increasing sodium. A reduced overall defect density and the fact that the states that are present are shallower together may help account for the lower VOC deficits in CZTSe and the empirical observations that sodium improves device performance.

  6. Performance of the polypropylene fiber tailstring on the Copper 7 intrauterine device.

    Science.gov (United States)

    Warner, M S; Matsuno, S J; Virgin, C J; Masterson, K B; Schneider, G A; Wright, T E; Robertson, C R; Fives-Taylor, P

    1991-01-01

    New and used polypropylene tailstrings from the Copper 7 (Cu-7) intrauterine device were examined by a combination of analytical techniques. Optical microscopy, scanning acoustic and electron microscopy, x-ray diffraction, energy dispersive x-ray analysis, and chemical etching were employed to elucidate both the surface and interior morphology of new Cu-7 tailstrings. Tailstrings removed from women following varying periods of use were investigated with optical microscopy, scanning and transmission electron microscopy. In addition, a subset of the used tailstrings were cultured to identify the types of microorganisms associated with them. Our findings show that unused Cu-7 tailstrings are in various stages of degradation owing to a combination of factors which include the high-draw ratio employed during manufacturing, the method of packaging, and the use of a particulate colourant. Furthermore, it is evident that used Cu-7 tailstrings undergo major deterioration while in situ because of the unfavorable interactions between the highly drawn polypropylene and the physiological environment. These results indicate that the polypropylene tailstrings as manufactured for use with the Cu-7 IUD fail to meet accepted design criteria for biomedical implants.

  7. Research on micro-sized acoustic bandgap structures.

    Energy Technology Data Exchange (ETDEWEB)

    Fleming, James Grant; McCormick, Frederick Bossert; Su, Mehmet F.; El-Kady, Ihab Fathy; Olsson, Roy H., III; Tuck, Melanie R.

    2010-01-01

    Phononic crystals (or acoustic crystals) are the acoustic wave analogue of photonic crystals. Here a periodic array of scattering inclusions located in a homogeneous host material forbids certain ranges of acoustic frequencies from existence within the crystal, thus creating what are known as acoustic (or phononic) bandgaps. The vast majority of phononic crystal devices reported prior to this LDRD were constructed by hand assembling scattering inclusions in a lossy viscoelastic medium, predominantly air, water or epoxy, resulting in large structures limited to frequencies below 1 MHz. Under this LDRD, phononic crystals and devices were scaled to very (VHF: 30-300 MHz) and ultra (UHF: 300-3000 MHz) high frequencies utilizing finite difference time domain (FDTD) modeling, microfabrication and micromachining technologies. This LDRD developed key breakthroughs in the areas of micro-phononic crystals including physical origins of phononic crystals, advanced FDTD modeling and design techniques, material considerations, microfabrication processes, characterization methods and device structures. Micro-phononic crystal devices realized in low-loss solid materials were emphasized in this work due to their potential applications in radio frequency communications and acoustic imaging for medical ultrasound and nondestructive testing. The results of the advanced modeling, fabrication and integrated transducer designs were that this LDRD produced the 1st measured phononic crystals and phononic crystal devices (waveguides) operating in the VHF (67 MHz) and UHF (937 MHz) frequency bands and established Sandia as a world leader in the area of micro-phononic crystals.

  8. Petahertz optical drive with wide-bandgap semiconductor

    Science.gov (United States)

    Mashiko, Hiroki; Oguri, Katsuya; Yamaguchi, Tomohiko; Suda, Akira; Gotoh, Hideki

    2016-08-01

    High-speed photonic and electronic devices at present rely on radiofrequency electric fields to control the physical properties of a semiconductor, which limits their operating speed to terahertz frequencies (1012 Hz ref. ). Using the electric field from intense light pulses, however, could extend the operating frequency into the petahertz regime (1015 Hz ref. ). Here we demonstrate optical driving at a petahertz frequency in the wide-bandgap semiconductor gallium nitride. Few-cycle near-infrared pulses are shown to induce electric interband polarization though a multiphoton process. Dipole oscillations with a periodicity of 860 as are revealed in the gallium nitride electron and hole system by using the quantum interference between the two transitions from the valence and conduction band states, which are probed by an extremely short isolated attosecond pulse with a coherent broadband spectrum. In principle, this shows that the conductivity of the semiconductor can be manipulated on attosecond timescales, which corresponds to instantaneous light-induced switching from insulator to conductor. The resultant dipole frequency reaches 1.16 PHz, showing the potential for future high-speed signal processing technologies based on wide-bandgap semiconductors.

  9. Pretreatment of plasma samples by a novel hollow fiber centrifugal ultrafiltrate device for the determination of cefaclor concentrations in human plasma.

    Science.gov (United States)

    Li, Jun-Mei; Li, Cen; Jiang, Ye; Ren, Shu-Meng

    2010-10-29

    A simple sample preparation method was developed by using a centrifugal ultrafiltration (CF-UF) device with hollow fiber (HF) for the determination of cefaclor in plasma by HPLC. Samples were placed into a homemade device, which was consisted of a glass tube and a U-shaped hollow fiber. The filtrate was withdrawn from the hollow fiber into a syringe after centrifugation and 20 μL was directly injected into the HPLC for analysis. The HPLC method had a linear calibration curve in the concentration range of 6.00×10(-2)-30.7 μg mL(-1)(r=0.9996). The limit of detection (LOD) and limit of quantitation (LOQ) were 0.02 and 0.06 μg mL(-1), respectively. The intra and inter-day precisions (RSD) were 1.7%, 1.2%, 1.0% and 3.6%, 2.5%, 1.9%, respectively, for three concentrations. Assay accuracy was higher than 99.2% and the absolute recovery was 86.8-92.5%. It is feasible to use this novel and low cost device for sample pretreatment for the analysis of cefaclor in plasma.

  10. Novel Approaches to Wide Bandgap CuInSe2 Based Absorbers

    Energy Technology Data Exchange (ETDEWEB)

    William N. Shafarman

    2011-04-28

    This project targeted the development of high performance wide bandgap solar cells based on thin film alloys of CuInSe2 to relax constraints on module design and enable tandem solar cell structures. This addressed goals of the Solar Energy Technologies Program for Next Generation PV to develop technology needed for higher thin film module efficiency as a means to reduce costs. Specific objectives of the research project were: 1) to develop the processes and materials required to improve the performance of wide bandgap thin film solar cells based on alloys of CuInSe2, and 2) to provide the fundamental science and engineering basis for the material, electronic, and device properties required to effectively apply these processes and materials to commercial manufacture. CuInSe2-based photovoltaics have established the highest efficiencies of the thin film materials at both the cell and module scales and are actively being scaled up to commercialization. In the highest efficiency cells and modules, the optical bandgap, a function of the CuInSe2-based alloy composition, is relatively low compared to the optimum match to the solar spectrum. Wider bandgap alloys of CuInSe2 produce higher cell voltages which can improve module performance and enable the development of tandem solar cells to boost the overall efficiency. A focus for the project was alloying with silver to form (AgCu)(InGa)Se2 pentenary thin films deposited by elemental co-evaporation which gives the broadest range of control of composition and material properties. This alloy has a lower melting temperature than Ag-free, Cu-based chalcopyrite compounds, which may enable films to be formed with lower defect densities and the (AgCu)(InGa)Se2 films give improved material properties and better device performance with increasing bandgap. A comprehensive characterization of optical, structural, and electronic properties of (AgCu)(InGa)Se2 was completed over the complete compositional range 0 ≤ Ga/(In+Ga) ≤ 1 and

  11. Water Fibers

    CERN Document Server

    Douvidzon, Mark L; Martin, Leopoldo L; Carmon, Tal

    2016-01-01

    Fibers constitute the backbone of modern communication and are used in laser surgeries; fibers also genarate coherent X-ray, guided-sound and supercontinuum. In contrast, fibers for capillary oscillations, which are unique to liquids, were rarely considered in optofluidics. Here we fabricate fibers by water bridging an optical tapered-coupler to a microlensed coupler. Our water fibers are held in air and their length can be longer than a millimeter. These hybrid fibers co-confine two important oscillations in nature: capillary- and electromagnetic-. We optically record vibrations in the water fiber, including an audio-rate fundamental and its 3 overtones in a harmonic series, that one can hear in soundtracks attached. Transforming Micro-Electro-Mechanical-Systems [MEMS] to Micro-Electro-Capillary-Systems [MECS], boosts the device softness by a million to accordingly improve its response to minute forces. Furthermore, MECS are compatible with water, which is a most important liquid in our world.

  12. Gap solitons in inhomogeneous high-index photonic bandgap fibers

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper

    2011-01-01

    will be driven towards the zerovelocity state [2,3]. An important question in connection with slow-light propagation is the influence of waveguide imperfections, which typically leads to a strong scattering of the slow light as the group velocity tends to zero. Theoretical investigations of this subject have so...

  13. Thermal modeling of wide bandgap materials for power MOSFETs

    Science.gov (United States)

    Manandhar, Mahesh B.; Matin, Mohammad A.

    2016-09-01

    This paper investigates the thermal performance of different wide bandgap (WBG) materials for their applicability as semiconductor material in power electronic devices. In particular, Silicon Carbide (SiC) and Gallium Nitride (GaN) are modeled for this purpose. These WBG materials have been known to show superior intrinsic material properties as compared to Silicon (Si), such as higher carrier mobility, lower electrical and thermal resistance. These unique properties have allowed for them to be used in power devices that can operate at higher voltages, temperatures and switching speeds with higher efficiencies. Digital prototyping of power devices have facilitated inexpensive and flexible methods for faster device development. The commercial simulation software COMSOL Multiphysics was used to simulate a 2-D model of MOSFETs of these WBG materials to observe their thermal performance under different voltage and current operating conditions. COMSOL is a simulation software that can be used to simulate temperature changes due to Joule heating in the case of power MOSFETs. COMSOL uses Finite Element/Volume Analysis methods to solve for variables in complex geometries where multiple material properties and physics are involved. The Semiconductor and Heat Transfer with Solids modules of COMSOL were used to study the thermal performance of the MOSFETs in steady state conditions. The results of the simulations for each of the two WBG materials were compared with that of Silicon to determine relative stability and merit of each material.

  14. Main Factors for Affecting Photonic Bandgap of Photonic Crystals

    Institute of Scientific and Technical Information of China (English)

    LI Xia; XUE Wei; JIANG Yu-rong; YU Zhi-nong; WANG Hua-qing

    2007-01-01

    The factors affecting one dimensional (1D) and two dimensional (2D) photonic crystals (PhCs) are systemically analyzed in this paper by numerical simulation.Transfer matrix method (TMM) is employed for 1D PCs, both finite difference time domain method (FDTD) and plane wave expansion method (PWE) are employed for 2D PCs.The result shows that the photonic bandgaps (PBG) are directly affected by crystal type, crystal lattice constant, modulation of refractive index and periodicity, and it is should be useful for design of different type photonic crystals with the required PBG and functional devices.Finally, as an example, a near-IR 1D PCs narrow filter was designed.

  15. Wide Bandgap Semiconductor Nanowires for Electronic, Photonic and Sensing Devices

    Science.gov (United States)

    2012-01-05

    exciton emission at 3.24 eV. Also, the ZnO nanorods can be integrated with AlGaN/ GaN HEMT sensors by incorporating the nano-rods on the HEMT gate sensing...area, the total sensing area increases significantly. The conventional AlGaN/ GaN HEMT detects the ambient changes through the “gate sensing area...glucose interaction to the AlGaN/ GaN HEMT . With such low detection limit, it is possible to dilute ɘ.1 micro-liter of EBC in 100-200 micro-liter

  16. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

    Energy Technology Data Exchange (ETDEWEB)

    Hui, Rongqing (Lenexa, KS); Jiang,Hong-Xing (Manhattan, KS); Lin, Jing-Yu (Manhattan, KS)

    2008-03-18

    The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

  17. On the Integration of Wide Band-gap Semiconductors in Single Phase Boost PFC Converters

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos

    Power semiconductor technology has dominated the evolution of switched mode power supplies (SMPS). Advances in silicon (Si) technology, as the introduction of metal oxide field effect transistor (MOSFET), isolated gate bipolar transistors (IGBT), superjunction vertical structures and Schottky...... compared to Si semiconductors. Moreover, both semiconductor materials are particularly interesting for high temperature operation. These characteristics makes integration of SiC and GaN devices as the next logical step to further increase efficiency and power density in SMPS. This work is part of the Ph......D project “Single phase PFC converter using wide band-gap devices” and focuses on attainable advantages by introducing wide band-gap semiconductors, and more particularly GaN devices in power factor correction circuits (PFC). First, an overview of current state-of-the-art semiconductor technology in the 600...

  18. Two-dimensional Kagome photonic bandgap waveguide

    DEFF Research Database (Denmark)

    Nielsen, Jens Bo; Søndergaard, Thomas; Libori, Stig E. Barkou;

    2000-01-01

    The transverse-magnetic photonic-bandgap-guidance properties are investigated for a planar two-dimensional (2-D) Kagome waveguide configuration using a full-vectorial plane-wave-expansion method. Single-moded well-localized low-index guided modes are found. The localization of the optical modes...... is investigated with respect to the width of the 2-D Kagome waveguide, and the number of modes existing for specific frequencies and waveguide widths is mapped out....

  19. Hollow fibers for compact infrared gas sensors

    Science.gov (United States)

    Lambrecht, A.; Hartwig, S.; Herbst, J.; Wöllenstein, J.

    2008-02-01

    Hollow fibers can be used for compact infrared gas sensors. The guided light is absorbed by the gas introduced into the hollow core. High sensitivity and a very small sampling volume can be achieved depending on fiber parameters i.e. attenuation, flexibility, and gas exchange rates. Different types of infrared hollow fibers including photonic bandgap fibers were characterized using quantum cascade lasers and thermal radiation sources. Obtained data are compared with available product specifications. Measurements with a compact fiber based ethanol sensor are compared with a system simulation. First results on the detection of trace amounts of the explosive material TATP using hollow fibers and QCL will be shown.

  20. Origin of unusual bandgap shift and dual emission in organic-inorganic lead halide perovskites.

    Science.gov (United States)

    Dar, M Ibrahim; Jacopin, Gwénolé; Meloni, Simone; Mattoni, Alessandro; Arora, Neha; Boziki, Ariadni; Zakeeruddin, Shaik Mohammed; Rothlisberger, Ursula; Grätzel, Michael

    2016-10-01

    Emission characteristics of metal halide perovskites play a key role in the current widespread investigations into their potential uses in optoelectronics and photonics. However, a fundamental understanding of the molecular origin of the unusual blueshift of the bandgap and dual emission in perovskites is still lacking. In this direction, we investigated the extraordinary photoluminescence behavior of three representatives of this important class of photonic materials, that is, CH3NH3PbI3, CH3NH3PbBr3, and CH(NH2)2PbBr3, which emerged from our thorough studies of the effects of temperature on their bandgap and emission decay dynamics using time-integrated and time-resolved photoluminescence spectroscopy. The low-temperature (perovskite composition, the bandgap exhibits an unusual blueshift by raising the temperature from 15 to 300 K. Density functional theory and classical molecular dynamics simulations allow for assigning the additional photoluminescence peak to the presence of molecularly disordered orthorhombic domains and also rationalize that the unusual blueshift of the bandgap with increasing temperature is due to the stabilization of the valence band maximum. Our findings provide new insights into the salient emission properties of perovskite materials, which define their performance in solar cells and light-emitting devices.

  1. Electronic transitions in the bandgap of copper indium gallium diselenide polycrystalline thin films

    Science.gov (United States)

    Heath, Jennifer Theresa

    The electronic properties of polycrystalline copper indium gallium diselenide thin films have been investigated, with emphasis on understanding the distribution and origin of electronic states in the bandgap. The samples studied were working photovoltaic devices with the structure ZnO/CdS/CuIn1-xGa xSe2/Mo, and photovoltaic efficiencies ranging from 8 to 16%. The CdS layer and the p-type CuIn1-xGa xSe2 film create the n+- p junction at the heart of these devices. The samples were investigated using four techniques based on the electrical response of the junction: admittance spectroscopy, drive level capacitance profiling, transient photocapacitance spectroscopy, and transient photocurrent spectroscopy. From these measurements the free carrier densities, defect densities within the bandgap, spatial uniformity, and minority carrier mobilities have been deduced. The sub-bandgap response from the CuIn1-xGaxSe2 film was dominated by two defects. One exhibited a thermal transition to the valence band with an activation energy ranging between 0.1 and 0.3 eV and thermal emission prefactors obeying the Meyer-Neldel rule. The second was detected as an optical transition 0.8 eV from the valence band edge. Neither of these defects exhibited densities that varied systematically with gallium content, implying that they are not directly connected with the group III elements in these alloys. The defect densities also do not clearly correlate with the photovoltaic device performance; however, the position of the 0.8 eV defect lies nearer to mid-gap in the higher gallium, and hence higher band gap, material. This implies that it may be a more important recombination center in these devices and may be partially responsible for the reduced photovoltaic efficiencies observed when Ga/(In + Ga) > 0.4. An additional defect response was observed near mid-gap in films grown by processes known to produce lower quality devices. The influence of defects located at grain boundaries was also

  2. A new photonic bandgap cover for a patch antenna with a photonic bandgap substrate

    Institute of Scientific and Technical Information of China (English)

    林青春; 朱方明; 何赛灵

    2004-01-01

    A new photonic bandgap (PBG) cover for a patch antenna with a photonic bandgap substrate is introduced. The plane wave expansion method and the FDTD method were used to calculate such an antenna system. Numerical results for the input return loss, radiation pattern, surface wave, and the directivity of the antennas are presented. A comparison between the conventional patch antenna and the new PBG antenna is given. It is shown that the new PBG cover is very efficient for improving the radiation directivity. The physical reasons for the improvement are also given.

  3. Bandgap Engineering in High-Efficiency Multijunction Concentrator Cells

    Energy Technology Data Exchange (ETDEWEB)

    King, R. R.; Sherif, R. A.; Kinsey, G. S.; Kurtz, S.; Fetzer, C. M.; Edmondson, K. M.; Law, D. C.; Cotal, H. L.; Krut, D. D.; Ermer, J. H.; Karam, N. H.

    2005-08-01

    This paper discusses semiconductor device research paths under investigation with the aim of reaching the milestone efficiency of 40%. A cost analysis shows that achieving very high cell efficiencies is crucial for the realization of cost-effective photovoltaics, because of the strongly leveraging effect of efficiency on module packaging and balance-of systems costs. Lattice-matched (LM) GaInP/ GaInAs/ Ge 3-junction cells have achieved the highest independently confirmed efficiency at 175 suns, 25?C, of 37.3% under the standard AM1.5D, low-AOD terrestrial spectrum. Lattice-mismatched, or metamorphic (MM), materials offer still higher potential efficiencies, if the crystal quality can be maintained. Theoretical efficiencies well over 50% are possible for a MM GaInP/ 1.17-eV GaInAs/ Ge 3-junction cell limited by radiative recombination at 500 suns. The bandgap - open circuit voltage offset, (Eg/q) - Voc, is used as a valuable theoretical and experimental tool to characterize multijunction cells with subcell bandgaps ranging from 0.7 to 2.1 eV. Experimental results are presented for prototype 6-junction cells employing an active {approx}1.1-eV dilute nitride GaInNAs subcell, with active-area efficiency greater than 23% and over 5.3 V open-circuit voltage under the 1-sun AM0 space spectrum. Such cell designs have theoretical efficiencies under the terrestrial spectrum at 500 suns concentration exceeding 55% efficiency, even for lattice-matched designs.

  4. Strain Gradient Modulated Exciton Evolution and Emission in ZnO Fibers

    Science.gov (United States)

    Wei, Bin; Ji, Yuan; Gauvin, Raynald; Zhang, Ze; Zou, Jin; Han, Xiaodong

    2017-01-01

    One-dimensional semiconductor can undergo large deformation including stretching and bending. This homogeneous strain and strain gradient are an easy and effective way to tune the light emission properties and the performance of piezo-phototronic devices. Here, we report that with large strain gradients from 2.1–3.5% μm−1, free-exciton emission was intensified, and the free-exciton interaction (FXI) emission became a prominent FXI-band at the tensile side of the ZnO fiber. These led to an asymmetric variation in energy and intensity along the cross-section as well as a redshift of the total near-band-edge (NBE) emission. This evolution of the exciton emission was directly demonstrated using spatially resolved CL spectrometry combined with an in situ tensile-bending approach at liquid nitrogen temperature for individual fibers and nanowires. A distinctive mechanism of the evolution of exciton emission is proposed: the enhancement of the free-exciton-related emission is attributed to the aggregated free excitons and their interaction in the narrow bandgap in the presence of high bandgap gradients and a transverse piezoelectric field. These results might facilitate new approaches for energy conversion and sensing applications via strained nanowires and fibers. PMID:28084427

  5. Strain Gradient Modulated Exciton Evolution and Emission in ZnO Fibers

    Science.gov (United States)

    Wei, Bin; Ji, Yuan; Gauvin, Raynald; Zhang, Ze; Zou, Jin; Han, Xiaodong

    2017-01-01

    One-dimensional semiconductor can undergo large deformation including stretching and bending. This homogeneous strain and strain gradient are an easy and effective way to tune the light emission properties and the performance of piezo-phototronic devices. Here, we report that with large strain gradients from 2.1–3.5% μm‑1, free-exciton emission was intensified, and the free-exciton interaction (FXI) emission became a prominent FXI-band at the tensile side of the ZnO fiber. These led to an asymmetric variation in energy and intensity along the cross-section as well as a redshift of the total near-band-edge (NBE) emission. This evolution of the exciton emission was directly demonstrated using spatially resolved CL spectrometry combined with an in situ tensile-bending approach at liquid nitrogen temperature for individual fibers and nanowires. A distinctive mechanism of the evolution of exciton emission is proposed: the enhancement of the free-exciton-related emission is attributed to the aggregated free excitons and their interaction in the narrow bandgap in the presence of high bandgap gradients and a transverse piezoelectric field. These results might facilitate new approaches for energy conversion and sensing applications via strained nanowires and fibers.

  6. INVESTIGATION ON EMI EFFECTS IN BANDGAP VOLTAGE REFERENCES

    OpenAIRE

    Fiori, Franco; Crovetti S., Paolo

    2002-01-01

    International audience; In this paper the susceptibility of integrated bandgap voltage references to Electromagnetic Interference (EMI) is investigated by on-chip measurements carried out on Kuijk and Tsividis bandgap circuits. These measurements highlight the offset in the reference voltage induced by continuous wave (CW) EMI and the complete failures which may be experienced by bandgap circuits. The role of the susceptibility of the startup circuit and of the operational amplifier which are...

  7. The impact of sodium on the sub-bandgap states in CZTSe and CZTS

    Energy Technology Data Exchange (ETDEWEB)

    Gershon, By Talia, E-mail: tsgersho@us.ibm.com; Lee, Yun Seog; Mankad, Ravin; Gunawan, Oki; Gokmen, Tayfun; Guha, Supratik [Physical Sciences Department, IBM T.J. Watson Research Center, 1101 Kitchawan Rd, Yorktown Heights, New York 10598 (United States); Bishop, Doug; McCandless, Brian [Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716 (United States)

    2015-03-23

    We compare the optically active sub-bandgap states in polycrystalline Cu{sub 2}ZnSnSe{sub 4} (CZTSe) and Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films as a function of sodium content. In all samples studied, we find that CZTSe has a lower concentration of radiative defect-derived states compared to CZTS and that the states are also shallower in CZTSe compared to CZTS. Further, we find that sodium impacts the relative ratios of two sub-bandgap peaks in the 4 K photoluminescence (PL) spectra of CZTSe (one at ∼0.85 eV and another at ∼0.92 eV). We propose that both of these sub-bandgap peaks stem from intrinsic point defects in CZTSe rather than from electronic states introduced by sodium; this is supported by a measurement on a sodium-free single-crystal of CZTSe. We also show that films with stronger emission through the shallower sub-bandgap states at 4 K display room-temperature PL closer to the bandgap energy. For all sodium quantities studied, one broad PL peak is observed in the 4 K PL spectrum of CZTS which also shifts towards the band edge with increasing sodium. A reduced overall defect density and the fact that the states that are present are shallower together may help account for the lower V{sub OC} deficits in CZTSe and the empirical observations that sodium improves device performance.

  8. Formation of sub pico-liter liquid periodic structure in a hollow optical fiber for photonic device applications

    Science.gov (United States)

    Hwang, Jihyun; Kim, Jongki; Park, Jiyoung; Oh, Kyunghwan

    2014-09-01

    We report a unique technique to generate a liquid periodic structure whose unit volume is as low as a few hundred femto-liter. Liquids such as water, toluene and ethanol were filled in a hollow optical fiber (hole diameter of 8 and 13μm), which were locally heated by a traversing miniature electric furnace. The periods between droplets could be varied flexibly in the range from 14 to 100μm and the volume of individual droplet was in the range from 112 to 845 femto-liter. We also fabricated the periodic liquid droplets with quantum dots, whose fluorescence was successfully measured in each droplet. These periodic liquid droplets could serve as flexible liquid long period fiber grating for the hollow optical fiber, which can be further applied in various mechanical and bio-chemical sensors

  9. Method for effectively utilizing tunable one-pump fiber parametric wavelength converters as an enabling device for WDM routers.

    Science.gov (United States)

    Cui, Sheng; Liu, Deming; Wang, Ying; Tu, Feng

    2009-02-02

    In this paper a method is proposed to maximize the bandwidth of the WDM router based on one-pump fiber parametric wavelength converters. It is proved that for such converters there exists an optimum signal (idler) frequency at which the output (input) tuning range can be maximized. Analytical expressions of the optimum frequency and the maximal tuning range are deduced. Then a two-stage bidirectional wavelength conversion method is proposed. With this method the bandwidth of the WDM router based on such a converter can be significantly improved compared to the one-stage ones by 252% if ordinary highly nonlinear fibers are used or 390% if fibers with optimal fourth order dispersion are used.

  10. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  11. Efficient stimulated Raman scattering in hybrid liquid-silica fibers for wavelength conversion

    Science.gov (United States)

    Lebrun, Sylvie; Phan Huy, Minh-Châu.; Delaye, Philippe; Pauliat, Gilles

    2016-10-01

    Wavelength Raman converters have been developed for years to provide an elegant solution to easily shift the wavelength of existing lasers. In the pulse regime, due to relatively low Raman gains, these converters are usually limited to high-energy pulses, typically a few J or a few mJ in the nanosecond or picosecond regime. In order to build efficient Raman converters with lower energy pulses, we have developed a new class of fiber wavelength shifters based on Stimulated Raman Scattering in the liquid filling the hollow core of photonic bandgap fibers or Kagome fibers. The liquid choice, the design of the photonic crystal microstructure, the fiber length and its diameter give us enough degrees of freedom to realize efficient and versatile shifters, each being optimized for a specific wavelength shift. Connecting such a fiber device to a fixed wavelength laser allows delivering a new wavelength. With the same laser, another wavelength can be obtained by connecting another shifter. Using microlasers delivering 532 nm sub-nanosecond pulses of about 1 μJ, we already built a full series of shifters to reach any wavelength among: 556 nm; 561 nm; 582 nm; 595 nm; 612 nm; 630 nm; 650 nm; 667 nm; 772 nm. Hereafter, we detail how we design and optimize these new devices.

  12. High-Temperature, Wirebondless, Ultracompact Wide Bandgap Power Semiconductor Modules

    Science.gov (United States)

    Elmes, John

    2015-01-01

    Silicon carbide (SiC) and other wide bandgap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and ultrahigh power density for both space and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliable high-temperature device packaging technology. This Phase II project developed an ultracompact hybrid power module packaging technology based on the use of double lead frames and direct lead frame-to-chip transient liquid phase (TLP) bonding that allows device operation up to 450 degC. The new power module will have a very small form factor with 3-5X reduction in size and weight from the prior art, and it will be capable of operating from 450 degC to -125 degC. This technology will have a profound impact on power electronics and energy conversion technologies and help to conserve energy and the environment as well as reduce the nation's dependence on fossil fuels.

  13. Stability and bandgaps of layered perovskites for one- and two-photon water splitting

    DEFF Research Database (Denmark)

    Castelli, Ivano Eligio; García Lastra, Juan Maria; Hüser, Falco

    2013-01-01

    Direct production of hydrogen from water and sunlight requires stable and abundantly available semiconductors with well positioned band edges relative to the water red-ox potentials. We have used density functional theory (DFT) calculations to investigate 300 oxides and oxynitrides...... in the Ruddlesden–Popper phase of the layered perovskite structure. Based on screening criteria for the stability, bandgaps and band edge positions, we suggest 20 new materials for the light harvesting photo-electrode of a one-photon water splitting device and 5 anode materials for a two-photon device with silicon...

  14. Stability and bandgaps of layered perovskites for one- and two-photon water splitting

    Science.gov (United States)

    Castelli, Ivano E.; María García-Lastra, Juan; Hüser, Falco; Thygesen, Kristian S.; Jacobsen, Karsten W.

    2013-10-01

    Direct production of hydrogen from water and sunlight requires stable and abundantly available semiconductors with well positioned band edges relative to the water red-ox potentials. We have used density functional theory (DFT) calculations to investigate 300 oxides and oxynitrides in the Ruddlesden-Popper phase of the layered perovskite structure. Based on screening criteria for the stability, bandgaps and band edge positions, we suggest 20 new materials for the light harvesting photo-electrode of a one-photon water splitting device and 5 anode materials for a two-photon device with silicon as photo-cathode. In addition, we explore a simple rule relating the bandgap of the perovskite to the number of octahedra in the layered structure and the B-metal ion. Finally, the quality of the GLLB-SC potential used to obtain the bandgaps, including the derivative discontinuity, is validated against G0W0@LDA gaps for 20 previously identified oxides and oxynitrides in the cubic perovskite structure.

  15. Optical reflectance and omnidirectional bandgaps in Fibonacci quasicrystals type 1-D multilayer structures containing exponentially graded material

    Science.gov (United States)

    Singh, Bipin K.; Thapa, Khem B.; Pandey, Praveen C.

    2013-06-01

    A theoretical study of optical reflectance and reflection bands of 1-D photonic quasi-crystals (Fibonacci type arrangement) composed of exponentially graded material is presented. The proposed structures consist of two different layers, one of them is of constant refractive index (L) and the other one is of exponentially graded refractive index (S) dielectric materials. Four different generations (2nd, 3rd, 4th and 5th) of the Fibonacci sequence for 10 periods in one dimension (1-D) are considered and compared in view of their optical reflectance and bandgaps for both TE and TM polarisations. Also, we proposed some heterostructures made by the combination of different Fibonacci generations and their periods to obtain suitable omnidirectional reflection band. We used the transfer matrix method (TMM) to obtain the reflectance, bandgaps and omnidirectional reflectional bandgaps (ODR) of such structures in near infrared spectrum (800-2200 nm) at different angles of incidence. We show that ODR exists in these types of structures. The number of ODRs and total bandgap depend on the Fibonacci generations. Extraordinary ODR bandgaps are obtained in the case of heterostructures formed by the combination of different generations of the Fibonacci sequence. The ODR for these structures is similar to the ODR of photonic crystals containing left-handed materials. This work would be useful to study the Fibonacci type photonic crystals having graded index materials and also it will open new window to design several photonic crystal devices like sensors, reflectors, etc. in the infrared region.

  16. Oxygen-Activated Growth and Bandgap Tunability of Large Single-Crystal Bilayer Graphene

    Science.gov (United States)

    Hao, Yufeng; Hone, James; Ruoff, Rodney; Colombo, Luigi; the Hone Group Team

    Distinct from zero-bandgap single-layer graphene, Bernal-stacked bilayer graphene (BLG) is a semiconductor whose bandgap can be tuned by a transverse electric field, making it a unique material for a number of electronic and photonic devices. In this presentation, we will focus on the most recent progress in the identification of new growth mechanisms towards large-area single-layer BLG on Copper: multiple control experiments and first-principles calculations are used to support the proposed mechanisms. We emphasize that trace amount of impurities on metal surface are critical to initiate graphene growth and affect the growth kinetics. Furthermore, contrary to the traditional viewpoint that graphene growth is always surface-limited process, our new observations strongly suggest that metal bulk plays a role to feed carbon species for graphene growth. State-of-the-art structural characterizations and electrical transport measurements of the CVD graphene layers will be presented as well.

  17. Comparison of retinal nerve fiber layer and macular thickness measurements with Stratus OCT and OPKO/OTI OCT devices in healthy subjects

    Institute of Scientific and Technical Information of China (English)

    Ahmet; Ozkok; Julide; Canan; Umurhan; Akkan; Nevbahar; Tamcelik; Mehmet; Erdogan; Didar; Ucar; Comlekoglu; Rengin; Yildirim

    2015-01-01

    AIM: To compare retinal nerve fiber layer(RNFL) and macular thickness measurements obtained with the Stratus optical coherence tomography(OCT) and OPKO/OTI OCT devices.METHODS: Included in the study were 59 eyes of 30 participants. All measurements for each eye were done on the same day with both devices. Student’s paired t-tests were used to compare the central macular thickness and RNFL measurements of the Stratus OCT and OPKO/OTI OCT. Pearson correlation was used to assess the relationship between the devices. Coefficient of variation(COV) was calculated to assess intersession repeatability.RESULTS: Using both the Stratus OCT and OPKO/OTI OCT, respectively, the measured mean average RNFL thicknesses were 98.9±11.1 μm and 115.1±9.6 μm(P =0.001),and the measured mean central retinal thicknesses(CRT)were 196.2 ±18.8 μm and 204.5 ±21.1 μm(P <0.001).Measured by the two devices, the RNFL thickness values were correlated in all quadrants, as were the retinal thickness values except the inferior outer sector. COV for average RNFL and CRT thickness were 2.9% and 4.6%for Stratus OCT, and 2.1% and 4.2% for OPKO/OTI OCT,respectively.CONCLUSION: We found good reproducibility of RNFL and retina thickness measurements for both Stratus OCT and OPKO/OTI OCT devices. However, even though the two OCT systems provided statistically correlated results,the values for both RNFL and macular thickness were statistically different. RNFL and macular thickness measurements with the OPKO/OTI OCT were higher than that of the Stratus OCT; therefore, the two OCT systems cannot be used interchangeably for the measurements of RNFL and macular thickness.

  18. Novel 1-D Sandwich Photonic Bandgap Structure

    Institute of Scientific and Technical Information of China (English)

    庞云波; 高葆新

    2004-01-01

    A sandwich photonic bandgap (PBG) structure is a novel PBG structure whose periodic lattice is buried in the middle of a substrate. Neither drilling nor suspending the substrate is required, and the integrity of the ground plane is maintained. This paper presents several modification techniques for sandwich PBG structure fabrication. The forbidden gap can be improved by adopting the chirping technique, applying the tapering technique, enlarging the periodic elements, adjusting the location of the periodic lattice in the substrate, and using different dielectric media H-shape elements. A finite difference time domain method is applied to analyze the structures. Deep and wide stopbands can be obtained using the modified sandwich structures. Experimental measurement results agree well with the theoretical analysis.

  19. Quantum electrodynamics near a photonic bandgap

    Science.gov (United States)

    Liu, Yanbing; Houck, Andrew A.

    2017-01-01

    Photonic crystals are a powerful tool for the manipulation of optical dispersion and density of states, and have thus been used in applications from photon generation to quantum sensing with nitrogen vacancy centres and atoms. The unique control provided by these media makes them a beautiful, if unexplored, playground for strong-coupling quantum electrodynamics, where a single, highly nonlinear emitter hybridizes with the band structure of the crystal. Here we demonstrate that such a hybridization can create localized cavity modes that live within the photonic bandgap, whose localization and spectral properties we explore in detail. We then demonstrate that the coloured vacuum of the photonic crystal can be employed for efficient dissipative state preparation. This work opens exciting prospects for engineering long-range spin models in the circuit quantum electrodynamics architecture, as well as new opportunities for dissipative quantum state engineering.

  20. III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

    KAUST Repository

    Detchprohm, T.

    2016-11-05

    The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.

  1. Applications of monolithic fiber interferometers and actively controlled fibers

    OpenAIRE

    Rugeland, Patrik

    2013-01-01

    The objective of this thesis was to develop applications of monolithic fiber devices and actively controlled fibers. A special twin-core fiber known as a ‘Gemini’ fiber was used to construct equal arm-length fiber interferometers, impervious to temperature and mechanical perturbations. A broadband add/drop multiplexer was constructed by inscribing fiber Bragg gratings in the arms of a Gemini Mach-Zehnder interferometer. A broadband interferometric nanosecond switch was constructed from a micr...

  2. Optically-powered Voltage-supply-device for Effective Utilization of Optical Energy in the Fiber-To-The-Home Network

    Science.gov (United States)

    Fukano, Hideki; Shinagawa, Takeshi; Tsuruta, Kenji

    An optically powered device with using InGaAs-Photodiode has been developed. This study aims to harvest light energy (2.8∼500μW) from the FTTH (Fiber To The Home) network and to utilize it for operating remote sensors without external energy sources. First, we designed and evaluated the characteristics of the booster circuit and confirmed that it could boost an input voltage of 0.3 V to 3.0 V. Next, we also evaluated the characteristics of InGaAs photodiode and confirmed that it can output a voltage over 0.3 V at 10-μW input light. We demonstrate that a ready-made sensor can be operated with an input optical power as low as 10 μW.

  3. Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor.

    Science.gov (United States)

    Ugeda, Miguel M; Bradley, Aaron J; Shi, Su-Fei; da Jornada, Felipe H; Zhang, Yi; Qiu, Diana Y; Ruan, Wei; Mo, Sung-Kwan; Hussain, Zahid; Shen, Zhi-Xun; Wang, Feng; Louie, Steven G; Crommie, Michael F

    2014-12-01

    Two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as a new platform for exploring 2D semiconductor physics. Reduced screening in two dimensions results in markedly enhanced electron-electron interactions, which have been predicted to generate giant bandgap renormalization and excitonic effects. Here we present a rigorous experimental observation of extraordinarily large exciton binding energy in a 2D semiconducting TMD. We determine the single-particle electronic bandgap of single-layer MoSe2 by means of scanning tunnelling spectroscopy (STS), as well as the two-particle exciton transition energy using photoluminescence (PL) spectroscopy. These yield an exciton binding energy of 0.55 eV for monolayer MoSe2 on graphene—orders of magnitude larger than what is seen in conventional 3D semiconductors and significantly higher than what we see for MoSe2 monolayers in more highly screening environments. This finding is corroborated by our ab initio GW and Bethe-Salpeter equation calculations which include electron correlation effects. The renormalized bandgap and large exciton binding observed here will have a profound impact on electronic and optoelectronic device technologies based on single-layer semiconducting TMDs.

  4. Direct-indirect character of the bandgap in methylammonium lead iodide perovskite

    Science.gov (United States)

    Hutter, Eline M.; Gélvez-Rueda, María C.; Osherov, Anna; Bulović, Vladimir; Grozema, Ferdinand C.; Stranks, Samuel D.; Savenije, Tom J.

    2017-01-01

    Metal halide perovskites such as methylammonium lead iodide (CH3NH3PbI3) are generating great excitement due to their outstanding optoelectronic properties, which lend them to application in high-efficiency solar cells and light-emission devices. However, there is currently debate over what drives the second-order electron-hole recombination in these materials. Here, we propose that the bandgap in CH3NH3PbI3 has a direct-indirect character. Time-resolved photo-conductance measurements show that generation of free mobile charges is maximized for excitation energies just above the indirect bandgap. Furthermore, we find that second-order electron-hole recombination of photo-excited charges is retarded at lower temperature. These observations are consistent with a slow phonon-assisted recombination pathway via the indirect bandgap. Interestingly, in the low-temperature orthorhombic phase, fast quenching of mobile charges occurs independent of the temperature and photon excitation energy. Our work provides a new framework to understand the optoelectronic properties of metal halide perovskites and analyse spectroscopic data.

  5. On the mechanism of bandgap formation in locally resonant finite elastic metamaterials

    Science.gov (United States)

    Sugino, Christopher; Leadenham, Stephen; Ruzzene, Massimo; Erturk, Alper

    2016-10-01

    Elastic/acoustic metamaterials made from locally resonant arrays can exhibit bandgaps at wavelengths much longer than the lattice size for various applications spanning from low-frequency vibration/sound attenuation to wave guiding and filtering in mechanical and electromechanical devices. For an effective use of such locally resonant metamaterial concepts in finite structures, it is required to bridge the gap between the lattice dispersion characteristics and modal behavior of the host structure with its resonators. To this end, we develop a novel argument for bandgap formation in finite-length elastic metamaterial beams, relying on the modal analysis and the assumption of infinitely many resonators. We show that the dual problem to wave propagation through an infinite periodic beam is the modal analysis of a finite beam with an infinite number of resonators. A simple formula that depends only on the resonator natural frequency and total mass ratio is derived for placing the bandgap in a desired frequency range, yielding an analytical insight and a rule of thumb for design purposes. A method for understanding the importance of a resonator location and mass is discussed in the context of a Riemann sum approximation of an integral, and a method for determining the optimal number of resonators for a given set of boundary conditions and target frequency is introduced. The simulations of the theoretical framework are validated by experiments for bending vibrations of a locally resonant cantilever beam.

  6. Compound semiconductor alloys: From atomic-scale structure to bandgap bowing

    Energy Technology Data Exchange (ETDEWEB)

    Schnohr, C. S., E-mail: c.schnohr@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany)

    2015-09-15

    Compound semiconductor alloys such as In{sub x}Ga{sub 1−x}As, GaAs{sub x}P{sub 1−x}, or CuIn{sub x}Ga{sub 1−x}Se{sub 2} are increasingly employed in numerous electronic, optoelectronic, and photonic devices due to the possibility of tuning their properties over a wide parameter range simply by adjusting the alloy composition. Interestingly, the material properties are also determined by the atomic-scale structure of the alloys on the subnanometer scale. These local atomic arrangements exhibit a striking deviation from the average crystallographic structure featuring different element-specific bond lengths, pronounced bond angle relaxation and severe atomic displacements. The latter, in particular, have a strong influence on the bandgap energy and give rise to a significant contribution to the experimentally observed bandgap bowing. This article therefore reviews experimental and theoretical studies of the atomic-scale structure of III-V and II-VI zincblende alloys and I-III-VI{sub 2} chalcopyrite alloys and explains the characteristic findings in terms of bond length and bond angle relaxation. Different approaches to describe and predict the bandgap bowing are presented and the correlation with local structural parameters is discussed in detail. The article further highlights both similarities and differences between the cubic zincblende alloys and the more complex chalcopyrite alloys and demonstrates that similar effects can also be expected for other tetrahedrally coordinated semiconductors of the adamantine structural family.

  7. Advances in Fiber Optic Sensors Technology Development for temperature and strain measurements in Superconducting magnets and devices

    CERN Document Server

    Chiuchiolo, A.; Bajko, M.; Bottura, L.; Consales, M.; Cusano, A.; Giordano, M.; Perez, J. C.

    2016-01-01

    The luminosity upgrade of the Large Hadron Collider (HL-LHC) requires the development of a new generation of superconducting magnets based on Nb3Sn technology. In order to monitor the magnet thermo-mechanical behaviour during its service life, from the coil fabrication to the magnet operation, reliable sensing systems need to be implemented. In the framework of the FP7 European project EUCARD, Nb3Sn racetrack coils are developed as test beds for the fabrication validation, the cable characterization and the instrumentation development. Fiber optic sensors (FOS) based on Fiber Bragg Grating (FBG) technology have been embedded in the coils of the Short Model Coil (SMC) magnet. The FBG sensitivity to both temperature and strain required the development of a solution able to separate the mechanical and temperature effects. This work presents the feasibility study of the implementation of embedded FBG sensors for the temperature and strain monitoring of the 11 T type conductor. We aim to monitor and register these...

  8. The Tunable Bandgap of AB-Stacked Bilayer Graphene on SiO2 with H2O Molecule Adsorption

    Institute of Scientific and Technical Information of China (English)

    WANG Tao; GUO Qing; AO Zhi-Min; LIU Yan; WANG Wen-Bo; SHENG Kuang; YU Bin

    2011-01-01

    The atomic and electronic structures of AB-stacking bilayer graphene (BLG) in the presence of H2O molecules are investigated by density functional theory calculations.For free-standing BLG,the bandgap is opened to 0.101 eV with a single H2O molecule adsorbed on its surface.The perfectly suspended BLG is sensitive to H2O adsorbates,which break the BLG lattice symmetry and open an energy gap.While a single H2O molecule is adsorbed on the BLG surface with a SiO2 substrate,the bandgap widens to 0.363eV.Both the H2O molecule adsorption and the oxide substrate contribute to the BLG bandgap opening.The phenomenon is interpreted with the charge transfer process in 2D carbon nanostructures.With its demonstrated unique electron transport properties,graphene has becomes one of the research hot spots with great potential in replacing silicon for future-generation nanoscale electronic devices.[1-3]Among graphene derivatives,AB-stacking bilayer graphene (BLG) exhibits fantastic properties.For example,the IBM research group successfully demonstrated a BLG-based transistor with a working frequency from 24.7 to 100GHz and highlighted suppressed electronic noise in devices.[4-6] With one additional layer added on single-layer graphene,BLG has a completely different band structure.However,pristine BLG still suffers from the same zero-bandgap (Eg) issue as single-layer graphene,hampering the implementation of logic switch devices with sufficient onto-off current ratios.%The atomic and electronic structures of AB-stacking bilayer graphene (BLG) in the presence of H2O molecules are investigated by density functional theory calculations. For free-standing BLG, the bandgap is opened to 0.101 eV with a single H2O molecule adsorbed on its surface. The perfectly suspended BLG is sensitive to H2O adsorbates, which break the BLG lattice symmetry and open an energy gap. While a single H2O molecule is adsorbed on the BLG surface with a S1O2 substrate, the bandgap widens to 0.363eV. Both the H2O

  9. Optimum design of band-gap beam structures

    DEFF Research Database (Denmark)

    Olhoff, Niels; Niu, Bin; Cheng, Gengdong

    2012-01-01

    -sectional area. To study the band-gap for travelling waves, a repeated inner segment of the optimized beams is analyzed using Floquet theory and the waveguide finite element (WFE) method. Finally, the frequency response is computed for the optimized beams when these are subjected to an external time......The design of band-gap structures receives increasing attention for many applications in mitigation of undesirable vibration and noise emission levels. A band-gap structure usually consists of a periodic distribution of elastic materials or segments, where the propagation of waves is impeded...

  10. Semiconductor nanostructures for optoelectronic devices processing, characterization and applications

    CERN Document Server

    Yi, Gyu-Chul

    2012-01-01

    This book summarizes the current state of semiconductor nanodevice development, examining nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene and describing their device applications.

  11. Microstructured optical fibers - Fundamentals and applications

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper; Bjarklev, Anders Overgaard

    2006-01-01

    In recent years optical fibers having a complex microstructure in the transverse plane have attracted much attention from both researchers and industry. Such fibers can either guide light through total internal reflection or the photonic bandgap effect. Among the many unique applications offered...... by these fibers are mode guidance in air, highly flexible dispersion engineering, and the use of very heterogeneous material combinations. In this paper, we review the different types and applications of microstructured optical fibers, with particular emphasis on recent advances in the field....

  12. Fiber-optic Fourier transform infrared (FO-FTIR) spectroscopy for detecting endotoxin contamination in ophthalmic viscosurgical devices (OVDS) (Conference Presentation)

    Science.gov (United States)

    Hassan, Moinuddin; Ilev, Ilko

    2016-03-01

    Ophthalmic Viscosurgical Devices (OVDs) in clinical setting are a major health risk factor for potential endotoxin contamination in the eye, due to their extensive applications in cataract surgery for space creation, stabilization and protection of intraocular tissue and intraocular lens (IOL) during implantation. Endotoxin contamination of OVDs is implicated in toxic anterior syndrome (TASS), a severe complication of cataract surgery that leads to intraocular damage and even blindness. Current standard methods for endotoxin contamination detection utilize rabbit assay or Limulus amoebocyte lysate (LAL) assays. These endotoxin detection strategies are extremely difficult for gel-like type devices such as OVDs. To overcome the endotoxin detection limitations in OVDs, we have developed an alternative optical detection methodology for label-free and real-time sensing of bacterial endotoxin in OVDs, based on fiber-optic Fourier transform infrared (FO-FTIR) transmission spectrometry in the mid-IR spectral range from 2.5 micron to 12 micron. Endotoxin contaminated OVD test samples were prepared by serial dilutions of endotoxins on OVDs. The major results of this study revealed two salient spectral peak shifts (in the regions 2925 to 2890 cm^-1 and 1125 to 1100 cm^-1), which are associated with endotoxin in OVDs. In addition, FO-FTIR experimental results processed using a multivariate analysis confirmed the observed specific peak shifts associated with endotoxin contamination in OVDs. Thus, employing the FO-FTIR sensing methodology integrated with a multivariate analysis could potentially be used as an alternative endotoxin detection technique in OVD.

  13. Pd-catalysed direct arylation polymerisation for synthesis of low-bandgap conjugated polymers and photovoltaic performance.

    Science.gov (United States)

    Chang, Shu-Wei; Waters, Huw; Kettle, Jeff; Kuo, Zi-Rui; Li, Chun-Han; Yu, Chin-Yang; Horie, Masaki

    2012-11-23

    Low-bandgap conjugated copolymers based on a donor-acceptor structure have been synthesised via palladium-complex catalysed direct arylation polymerisation. Initially, we report the optimisation of the synthesis of poly(cyclopentadithiophene-alt-benzothiadiazole) (PCPDTBT) formed between cyclopentadithiophene and dibromobenzothiadiazole units. The polymerisation condition has been optimised, which affords high-molecular-weight polymers of up to M(n) = 70 k using N-methylpyrrolidone as a solvent. The polymers are used to fabricate organic photovoltaic devices and the best performing PCPDTBT device exhibits a moderate improvement over devices fabricated using the related polymer via Suzuki coupling. Similar polymerisation conditions have also been applied for other monomer units.

  14. Design of Bandgap Reference in Switching Power Supply

    Institute of Scientific and Technical Information of China (English)

    XU Li; NIU Ping-juan; FU Xian-song; DING Ke; PENG Xiao-lei

    2009-01-01

    A bandgap voltage reference is designed to meet the requirements of low power loss,low temperature coefficient and high power source rejection ratio(PSRR) in the intergrated circuit.Based on the analysis of conventional bandgap reference circuit,and combined with the integral performance of IC,the specific design index of the bandgap reference is put forward.In the meantime,the circuit and the layout are designed with Chartered 0.35 μm dual gate CMOS process.The simulation result shows that the coefficient is less than 30ppm/℃ with the temperature from -50℃ to 150℃. The bandgap reference has the characteristics of low power and high PSRR.

  15. High Power Wide Bandgap Engineered MMW MMIC Transceiver Project

    Data.gov (United States)

    National Aeronautics and Space Administration — During this phase I SBIR effort unique proven lattice and bandgap engineering techniques will be utilized to epitaxially grow InAlAs / InGaAs on GaN substrate for...

  16. Growth of Bulk Wide Bandgap Semiconductor Crystals and Their Potential Applications

    Science.gov (United States)

    Chen, Kuo-Tong; Shi, Detang; Morgan, S. H.; Collins, W. Eugene; Burger, Arnold

    1997-01-01

    Developments in bulk crystal growth research for electro-optical devices in the Center for Photonic Materials and Devices since its establishment have been reviewed. Purification processes and single crystal growth systems employing physical vapor transport and Bridgman methods were assembled and used to produce high purity and superior quality wide bandgap materials such as heavy metal halides and II-VI compound semiconductors. Comprehensive material characterization techniques have been employed to reveal the optical, electrical and thermodynamic properties of crystals, and the results were used to establish improved material processing procedures. Postgrowth treatments such as passivation, oxidation, chemical etching and metal contacting during the X-ray and gamma-ray device fabrication process have also been investigated and low noise threshold with improved energy resolution has been achieved.

  17. Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air.

    Science.gov (United States)

    Fonseca, Jose J; Tongay, Sefaattin; Topsakal, Mehmet; Chew, Annabel R; Lin, Alan J; Ko, Changhyun; Luce, Alexander V; Salleo, Alberto; Wu, Junqiao; Dubon, Oscar D

    2016-08-01

    A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te-terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is achieved by thermal annealing, demonstrating that reversible band engineering in layered semiconductors is accessible through their surfaces.

  18. Photonic crystal fibers: fundamentals to emerging applications

    DEFF Research Database (Denmark)

    Bjarklev, Anders Overgaard

    2005-01-01

    A review of the fundamental properties of photonic crystal fibers is presented. Special focus is held on the emerging fields of application within areas such as actively controlled fiber devices and high-power fiber lasers.......A review of the fundamental properties of photonic crystal fibers is presented. Special focus is held on the emerging fields of application within areas such as actively controlled fiber devices and high-power fiber lasers....

  19. Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions

    KAUST Repository

    Awan, Saif Ullah

    2014-08-28

    Microstructural and optical properties of Zn1-yLiyO (0.00 ≤y ≤0.10) nanoparticles are investigated. Li incorporation leads to substantial changes in the structural characterization. From micro-structural analysis, no secondary phases or clustering of Li was detected. Elemental maps confirmed homogeneous distribution of Li in ZnO. Sharp UV peak due to the recombination of free exciton and defects based luminescence broad visible band was observed. The transition from the conduction band to Zinc vacancy defect level in photoluminescence spectra is found at 518±2.5nm. The yellow luminescence was observed and attributed to Li related defects in doped samples. With increasing Li doping, a decrease in energy bandgap was observed in the range 3.26±0.014 to 3.17±0.018eV. The bandgap narrowing behavior is explained in terms of the band tailing effect due to structural disorder, carrier-impurities, carrier-carrier, and carrier-phonon interactions. Tuning of the bandgap energy in this class of wide bandgap semiconductor is very important for room temperature spintronics applications and optical devices. © 2014 AIP Publishing LLC.

  20. Open-circuit voltage deficit, radiative sub-bandgap states, and prospects in quantum dot solar cells.

    Science.gov (United States)

    Chuang, Chia-Hao Marcus; Maurano, Andrea; Brandt, Riley E; Hwang, Gyu Weon; Jean, Joel; Buonassisi, Tonio; Bulović, Vladimir; Bawendi, Moungi G

    2015-05-13

    Quantum dot photovoltaics (QDPV) offer the potential for low-cost solar cells. To develop strategies for continued improvement in QDPVs, a better understanding of the factors that limit their performance is essential. Here, we study carrier recombination processes that limit the power conversion efficiency of PbS QDPVs. We demonstrate the presence of radiative sub-bandgap states and sub-bandgap state filling in operating devices by using photoluminescence (PL) and electroluminescence (EL) spectroscopy. These sub-bandgap states are most likely the origin of the high open-circuit-voltage (VOC) deficit and relatively limited carrier collection that have thus far been observed in QDPVs. Combining these results with our perspectives on recent progress in QDPV, we conclude that eliminating sub-bandgap states in PbS QD films has the potential to show a greater gain than may be attainable by optimization of interfaces between QDs and other materials. We suggest possible future directions that could guide the design of high-performance QDPVs.

  1. Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications

    KAUST Repository

    Amin, B.

    2011-01-19

    A theoretical study of Al1−xGaxN, based on the full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap,optical properties, and nonlinear behavior of the compound with the change in the Ga concentration. It is found that the bandgap decreases with the increase in Ga. A maximum value of 5.50 eV is determined for the bandgap of pure AlN, which reaches a minimum value of 3.0 eV when Al is completely replaced by Ga. The static index of refraction and dielectric constant decreases with the increase in the bandgap of the material, assigning a high index of refraction to pure GaN when compared to pure AlN. The refractive index drops below 1 for higher energy photons, larger than 14 eV. The group velocity of these photons is larger than the vacuum velocity of light. This astonishing result shows that at higher energies the optical properties of the material shifts from linear to nonlinear. Furthermore, frequency dependent reflectivity and absorption coefficients show that peak values of the absorption coefficient and reflectivity shift toward lower energy in the ultraviolet (UV) spectrum with the increase in Ga concentration. This comprehensive theoretical study of the optoelectronic properties predicts that the material can be effectively used in the optical devices working in the visible and UV spectrum.

  2. A strain or electric field induced direct bandgap in ultrathin silicon film and its application in photovoltaics or photocatalysis.

    Science.gov (United States)

    Cao, Tengfei; Wang, Da; Geng, Dong-Sheng; Liu, Li-Min; Zhao, Jijun

    2016-03-14

    The indirect bandgap character of silicon greatly limits its applications in electronic or optoelectronic devices, and direct bandgaps are highly desirable in all silicon allotropes. The successful synthesis of ultrathin or even monolayer silicon films experimentally has opened new opportunities to further modulate the electronic structure of silicon through external modulation. In this work, strain or electric field effects on the electronic structure of ultrathin silicon film (USF) are systematically explored. The results demonstrate that all USFs are indirect band-gap semiconductors; interestingly, tensile strain or electric field efficiently tunes the USFs into direct band gap semiconductors. The indirect to direct band gap transition in the USFs not only extends their light adsorption spectra into the visible light region but also greatly enhances the adsorption intensity. Because of this, strained USFs have great potential to be used as a high-performance photovoltaic material. Furthermore, the high stability, moderate band-gap and proper band edge positions demonstrate that monolayer and bilayer USFs can also be used as photocatalysts for water splitting.

  3. Fused-Polished Fiber Couplers

    Institute of Scientific and Technical Information of China (English)

    Sien; Chi; Shiao-Min; Tseng

    2003-01-01

    We report on fused-polished fiber couplers with a new fabrication method. This structure so fabricated is promising while achieving high-performance all-fiber WDM devices. Potential advantages and prospects of our works are presented.

  4. Fiber optic sensing and imaging

    CERN Document Server

    2013-01-01

    This book is designed to highlight the basic principles of fiber optic imaging and sensing devices. The editor has organized the book to provide the reader with a solid foundation in fiber optic imaging and sensing devices. It begins with an introductory chapter that starts from Maxwell’s equations and ends with the derivation of the basic optical fiber characteristic equations and solutions (i.e. fiber modes). Chapter 2 reviews most common fiber optic interferometric devices and Chapter 3 discusses the basics of fiber optic imagers with emphasis on fiber optic confocal microscope. The fiber optic interferometric sensors are discussed in detail in chapter 4 and 5. Chapter 6 covers optical coherence tomography and goes into the details of signal processing and systems level approach of the real-time OCT implementation. Also useful forms of device characteristic equations are provided so that this book can be used as a reference for scientists and engineers in the optics and related fields.

  5. On the Suppression Band and Bandgap of Planar Electromagnetic Bandgap Structures

    Directory of Open Access Journals (Sweden)

    Baharak Mohajer-Iravani

    2014-01-01

    Full Text Available Electromagnetic bandgap structures are considered a viable solution for the problem of switching noise in printed circuit boards and packages. Less attention, however, has been given to whether or not the introduction of EBGs affects the EMI potential of the circuit to couple unwanted energy to neighboring layers or interconnects. In this paper, we show that the bandgap of EBG structures, as generated using the Brillouin diagram, does not necessarily correspond to the suppression bandwidth typically generated using S-parameters. We show that the reactive near fields radiating from openings within the EBG layers can be substantial and are present in the entire frequency band including propagating and nonpropagating mode regions. These fields decay fast with distance; however, they can couple significant energy to adjacent layers and to signal lines. The findings are validated using full-wave three-dimensional numerical simulation. Based on this work, design guidelines for EBG structures can be drawn to insure not only suppression of switching noise but also minimization of EMI and insuring signal integrity.

  6. Paper-based energy-storage devices comprising carbon fiber-reinforced polypyrrole-cladophora nanocellulose composite electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Razaq, Aamir; Sjoedin, Martin; Stroemme, Maria; Mihranyan, Albert [Nanotechnology and Functional Materials, Department of Engineering Sciences, Uppsala (Sweden); Department of Chemistry, Angstroem Laboratory, Uppsala (Sweden); Nyholm, Leif [Department of Chemistry, Angstroem Laboratory, Uppsala (Sweden)

    2012-04-15

    Composites of polypyrrole (PPy) and Cladophora nanocellulose, reinforced with 8 {mu}m-thick chopped carbon filaments, can be used as electrode materials to obtain paper-based energy-storage devices with unprecedented performance at high charge and discharge rates. Charge capacities of more than 200 C g{sup -1} (PPy) are obtained for paper-based electrodes at potential scan rates as high as 500 mV s{sup -1}, whereas cell capacitances of {proportional_to}60-70 F g{sup -1} (PPy) are reached for symmetric supercapacitor cells with capacitances up to 3.0 F (i.e.,0.48 F cm{sup -2}) when charged to 0.6 V using current densities as high as 31 A g{sup -1} based on the PPy weight (i.e., 99 mA cm{sup -2}). Energy and power densities of 1.75 Wh kg{sup -1} and 2.7 kW kg{sup -1}, respectively, are obtained when normalized with respect to twice the PPy weight of the smaller electrode. No loss in cell capacitance is seen during charging/discharging at 7.7 A g{sup -1} (PPy) over 1500 cycles. It is proposed that the nonelectroactive carbon filaments decrease the contact resistances and the resistance of the reduced PPy composite. The present straightforward approach represents significant progress in the development of low-cost and environmentally friendly paper-based energy-storage devices for high-power applications. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Low bandgap semiconducting polymers for polymeric photovoltaics.

    Science.gov (United States)

    Liu, Chang; Wang, Kai; Gong, Xiong; Heeger, Alan J

    2016-08-22

    In order to develop high performance polymer solar cells (PSCs), full exploitation of the sun-irradiation from ultraviolet (UV) to near infrared (NIR) is one of the key factors to ensure high photocurrents and thus high efficiency. In this review, five of the effective design rules for approaching LBG semiconducting polymers with high molar absorptivity, suitable energy levels, high charge carrier mobility and high solubility in organic solvents are overviewed. These design stratagems include fused heterocycles for facilitating π-electron flowing along the polymer backbone, groups/atoms bridging adjacent rings for maintaining a high planarity, introduction of electron-withdrawing units for lowering the bandgap (Eg), donor-acceptor (D-A) copolymerization for narrowing Eg and 2-dimensional conjugation for broadened absorption and enhanced hole mobility. It has been demonstrated that LBG semiconducting polymers based on electron-donor units combined with strong electron-withdrawing units possess excellent electronic and optic properties, emerging as excellent candidates for efficient PSCs. While for ultrasensitive photodetectors (PDs), which have intensive applications in both scientific and industrial sectors, sensing from the UV to the NIR region is of critical importance. For polymer PDs, Eg as low as 0.8 eV has been obtained through a rational design stratagem, covering a broad wavelength range from the UV to the NIR region (1450 nm). However, the response time of the polymer PDs are severely limited by the hole mobility of LBG semiconducting polymers, which is significantly lower than those of the inorganic materials. Thus, further advancing the hole mobility of LBG semiconducting polymers is of equal importance as broadening the spectral response for approaching uncooled ultrasensitive broadband polymer PDs in the future study.

  8. Low-loss air-core polarization maintaining terahertz fiber.

    Science.gov (United States)

    Ren, Guobin; Gong, Yandong; Shum, Ping; Yu, Xia; Hu, JuanJuan; Wang, Guanghui; Ong Ling Chuen, Michael; Paulose, Varghese

    2008-09-01

    We propose a low-loss air-core polarization maintaining polymer fiber for terahertz (THz) wave guiding. The periodic arrangement of square holes with round corners in the cladding offers a bandgap effect for mode guiding. Numerical simulations show that the bandgap effect repels the modal power from the absorbent background polymers, resulting in a significant suppression of absorption loss of the polymers by a factor of more than 25. The phase-index birefringence of the proposed THz fiber is in the order of 10(-3).

  9. Electrical and optical measurements of the bandgap energy of a light-emitting diode

    Science.gov (United States)

    Petit, Matthieu; Michez, Lisa; Raimundo, Jean-Manuel; Dumas, Philippe

    2016-03-01

    Semiconductor materials are at the core of electronics. Most electronic devices are made of semiconductors. The operation of these components is well described by quantum physics which is often a difficult concept for students to understand. One of the intrinsic parameters of semiconductors is their bandgap energy {{E}\\text{g}} . In the case of light-emitting diodes (LEDs) {{E}\\text{g}} fixes the colour of the light emitted by the diodes. In this article we propose an experiment to compare {{E}\\text{g}} of a green LED obtained by both electrical and optical measurements. The two slightly different results can be explained by the theoretical knowledge of students on solid physics and the internal structure of electronic devices.

  10. Wide-Band Spatially Tunable Photonic Bandgap in Visible Spectral Range and Laser based on a Polymer Stabilized Blue Phase

    OpenAIRE

    2016-01-01

    This work successfully develops a largely-gradient-pitched polymer-stabilized blue phase (PSBP) photonic bandgap (PBG) device with a wide-band spatial tunability in nearly entire visible region within a wide blue phase (BP) temperature range including room temperature. The device is fabricated based on the reverse diffusion of two injected BP-monomer mixtures with a low and a high chiral concentrations and afterwards through UV-curing. This gradient-pitched PSBP can show a rainbow-like reflec...

  11. Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current.

    Science.gov (United States)

    Shoute, Gem; Afshar, Amir; Muneshwar, Triratna; Cadien, Kenneth; Barlage, Douglas

    2016-02-04

    Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely investigated as a result of the lack of available p-type wide-bandgap inorganic semiconductors. Here, we present a wide-bandgap metal-oxide n-type semiconductor that is able to sustain a strong p-type inversion layer using a high-dielectric-constant barrier dielectric when sourced with a heterogeneous p-type material. A demonstration of the utility of the inversion layer was also investigated and utilized as the controlling element in a unique tunnelling junction transistor. The resulting electrical performance of this prototype device exhibited among the highest reported current, power and transconductance densities. Further utilization of the p-type inversion layer is critical to unlocking the previously unexplored capability of metal-oxide thin-film transistors, such applications with next-generation display switches, sensors, radio frequency circuits and power converters.

  12. Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

    Science.gov (United States)

    Shoute, Gem; Afshar, Amir; Muneshwar, Triratna; Cadien, Kenneth; Barlage, Douglas

    2016-02-01

    Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely investigated as a result of the lack of available p-type wide-bandgap inorganic semiconductors. Here, we present a wide-bandgap metal-oxide n-type semiconductor that is able to sustain a strong p-type inversion layer using a high-dielectric-constant barrier dielectric when sourced with a heterogeneous p-type material. A demonstration of the utility of the inversion layer was also investigated and utilized as the controlling element in a unique tunnelling junction transistor. The resulting electrical performance of this prototype device exhibited among the highest reported current, power and transconductance densities. Further utilization of the p-type inversion layer is critical to unlocking the previously unexplored capability of metal-oxide thin-film transistors, such applications with next-generation display switches, sensors, radio frequency circuits and power converters.

  13. Wideband saturable absorption in few-layer molybdenum diselenide (MoSe2) for Q-switching Yb-, Er- and Tm-doped fiber lasers

    CERN Document Server

    Woodward, R I; Runcorn, T H; Hu, G; Torrisi, F; Kelleher, E J R; Hasan, T

    2015-01-01

    We fabricate a free-standing molybdenum diselenide (MoSe2) saturable absorber by embedding liquid-phase exfoliated few-layer MoSe2 flakes into a polymer film. The MoSe2-polymer composite is used to Q-switch fiber lasers based on ytterbium (Yb), erbium (Er) and thulium (Tm) gain fiber, producing trains of microsecond-duration pulses with kilohertz repetition rates at 1060 nm, 1566 nm and 1924 nm, respectively. Such operating wavelengths correspond to sub-bandgap saturable absorption in MoSe2, which is explained in the context of edge-states, building upon studies of other semiconducting transition metal dichalcogenide (TMD)-based saturable absorbers. Our work adds few-layer MoSe2 to the growing catalog of TMDs with remarkable optical properties, which offer new opportunities for photonic devices.

  14. Advanced Materials for High Temperature, High Performance, Wide Bandgap Power Modules

    Science.gov (United States)

    O'Neal, Chad B.; McGee, Brad; McPherson, Brice; Stabach, Jennifer; Lollar, Richard; Liederbach, Ross; Passmore, Brandon

    2016-01-01

    Advanced packaging materials must be utilized to take full advantage of the benefits of the superior electrical and thermal properties of wide bandgap power devices in the development of next generation power electronics systems. In this manuscript, the use of advanced materials for key packaging processes and components in multi-chip power modules will be discussed. For example, to date, there has been significant development in silver sintering paste as a high temperature die attach material replacement for conventional solder-based attach due to the improved thermal and mechanical characteristics as well as lower processing temperatures. In order to evaluate the bond quality and performance of this material, shear strength, thermal characteristics, and void quality for a number of silver sintering paste materials were analyzed as a die attach alternative to solder. In addition, as high voltage wide bandgap devices shift from engineering samples to commercial components, passivation materials become key in preventing premature breakdown in power modules. High temperature, high dielectric strength potting materials were investigated to be used to encapsulate and passivate components internal to a power module. The breakdown voltage up to 30 kV and corresponding leakage current for these materials as a function of temperature is also presented. Lastly, high temperature plastic housing materials are important for not only discrete devices but also for power modules. As the operational temperature of the device and/or ambient temperature increases, the mechanical strength and dielectric properties are dramatically reduced. Therefore, the electrical characteristics such as breakdown voltage and leakage current as a function of temperature for housing materials are presented.

  15. 21 CFR 880.5300 - Medical absorbent fiber.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Medical absorbent fiber. 880.5300 Section 880.5300... Devices § 880.5300 Medical absorbent fiber. (a) Identification. A medical absorbent fiber is a device...'s body surface. Absorbent fibers intended solely for cosmetic purposes are not included in...

  16. Investigation of the guided-mode characteristics of hollow-core photonic band-gap fibre with interstitial holes

    Institute of Scientific and Technical Information of China (English)

    Yuan Jin-Hui; Yu Chong-Xiu; Sang Xin-Zhu; Zhang Jin-Long; Zhou Gui-Yao; Li Shu-Guang; Hou Lan-Tian

    2011-01-01

    This paper investigates the guided-mode characteristics of hollow-core photonic band-gap fibre (HC-PBGF) with interstitial holes fabricated by an improved twice stack-and-draw technique at visible wavelengths. Based on the simulation model with interstitial holes, the influence of glass interstitial apexes on photonic band-gaps is discussed.The existing forms of guided-mode in part band gaps are shown by using the full-vector plane-wave method. In the experiment, the observed transmission spectrum corresponds to the part band gaps obtained by simulation. The fundamental and second-order guided-modes with mixture of yellow and green light are observed through choosing appropriate fibre length and adjusting coupling device. The loss mechanism of guided-modes in HC-PBGF is also discussed.

  17. Growth and Characterization of GaAs/AlGaAs Thue-Morse Quasicrystal Photonic Bandgap Structures

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong-Gang; JIANG Xun-Ya; ZHU Cheng; GU Yi; LI Ai-Zhen; QI Ming; FENG Song-Lin

    2005-01-01

    @@ One-dimensional quasicrystal structures composed of Ⅲ-V semiconductor GaAs/AlGaAs multilayers in deterministic Thue-Morse (TM) sequences have been grown by using gas-source molecular beam epitaxy to investigate both the structural and the photonic bandgap properties. The x-ray measurements show that this aperiodic system exhibits obvious periodic spatial correlations, from which the precise thickness of the constitutive layers could be determined. Transmission and reflection measurements experimentally demonstrated plenty of photonic bandgaps with traditional or fractal features existing in those quasicrystal structures, which are in good agreement with the transfer matrix simulations. The diversity of this TM system makes it a good candidate for photonic device applications.

  18. Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content

    Science.gov (United States)

    Gassenq, A.; Milord, L.; Aubin, J.; Guilloy, K.; Tardif, S.; Pauc, N.; Rothman, J.; Chelnokov, A.; Hartmann, J. M.; Reboud, V.; Calvo, V.

    2016-12-01

    Adding Tin (Sn) to Germanium (Ge) can turn it into a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. Several approaches are currently being investigated to improve the GeSn devices. It has been theoretically predicted that the strain can improve their optical properties. However, the impact of strain on band parameters has not yet been measured for really high Sn contents (i.e., above 11%). In this work, we have used the photocurrent and photoluminescence spectroscopy to measure the gamma bandgap in compressively strained GeSn layers grown on Ge buffers. A good agreement is found with the modeling and the literature. We show here that the conventional GeSn deformation potentials used in the literature for smaller Sn contents can be applied up to 15% Sn. This gives a better understanding of strained-GeSn for future laser designs.

  19. Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

    Science.gov (United States)

    Reddy, P.; Hoffmann, M. P.; Kaess, F.; Bryan, Z.; Bryan, I.; Bobea, M.; Klump, A.; Tweedie, J.; Kirste, R.; Mita, S.; Gerhold, M.; Collazo, R.; Sitar, Z.

    2016-11-01

    A theoretical framework for a general approach to reduce point defect density in materials via control of defect quasi Fermi level (dQFL) is presented. The control of dQFL is achieved via excess minority carrier generation. General guidelines for controlling dQFL that lead to a significant reduction in compensating point defects in any doped material is proposed. The framework introduces and incorporates the effects of various factors that control the efficacy of the defect reduction process such as defect level, defect formation energy, bandgap, and excess minority carrier density. Modified formation energy diagrams are proposed, which illustrate the effect of the quasi Fermi level control on the defect formation energies. These formation energy diagrams provide powerful tools to determine the feasibility and requirements to produce the desired reduction in specified point defects. An experimental study of the effect of excess minority carriers on point defect incorporation in GaN and AlGaN shows an excellent quantitative agreement with the theoretical predictions. Illumination at energies larger than the bandgap is employed as a means to generate excess minority carriers. The case studies with CN in Si doped GaN, H and VN in Mg doped GaN and VM-2ON in Si doped Al0.65Ga0.35N revealed a significant reduction in impurities in agreement with the proposed theory. Since compensating point defects control the material performance (this is particularly challenging in wide and ultra wide bandgap materials), dQFL control is a highly promising technique with wide scope and may be utilized to improve the properties of various materials systems and performance of devices based upon them.

  20. Ultrasonic imaging of seismic physical models using a phase-shifted fiber Bragg grating.

    Science.gov (United States)

    Guo, Jingjing; Xue, Shigui; Zhao, Qun; Yang, Changxi

    2014-08-11

    We report what is to our knowledge the first ultrasonic imaging of seismic physical models by using a phase-shifted fiber Bragg grating (PS-FBG). Seismic models, which consist of multiple layer structures, were immersed in water. Piezoelectric (PZT) transducer was used to generate ultrasonic waves and a PS-FBG as a receiver. Two-dimensional (2D) ultrasonic images were reconstructed by scanning the PS-FBG with a high-precision position scanning device. In order to suppress the low-frequency drift of the Bragg wavelength during scanning, a tight wavelength tracking method was employed to lock the laser to the PS-FBG resonance in its reflection bandgap. The ultrasonic images captured by the PS-FBG have been compared with the images obtained by the geophysical imaging system, Sinopec, demonstrating the feasibility of our PS-FBG based imaging system in seismic modeling studies.

  1. The density matrix method in photonic bandgap and antiferromagnetic materials

    Science.gov (United States)

    Barrie, Scott B.

    In this thesis, a theory for dispersive polaritonic bandgap (DPBG) and photonic bandgap (PBG) materials is developed. An ensemble of multi-level nanoparticles, such as non-interacting two-, three- and four-level atoms doped in DPBG and PBG materials is considered. The optical properties of these materials such as spontaneous emission, line broadening, fluorescence and narrowing of the natural linewidth have been studied using the density matrix method. Numerical simulations for these properties have been performed for the DPBG materials SiC and InAs, and for a PBG material with a 20 percent gap-to-midgap ratio. When a three-level nanoparticle is doped into a DPBG material, it is predicted that one or two bound states exist when one or both resonance energies, respectively, lie in the bandgap. It is shown when a resonance energy lies below the bandgap, its spectral density peak weakens and broadens as the resonance energy increases to the lower band edge. For the first time it is predicted that when a nanoparticle's resonance energy lies above the bandgap, its spectral density peak weakens and broadens as the resonance energy increases. A relation is also found between spectral structure and gap-to-midgap ratios. The dressed states of a two-level atom doped into a DPBG material under the influence of an intense monochromatic laser field are examined. The splitting of the dressed state energies is calculated, and it is predicted that the splitting depends on the polariton density of states and the Rabi frequency of laser field. The fluoresence is also examined, and for the first time two distinct control processes are found for the transition from one peak to three peaks. It was previously known that the Rabi frequency controlled the Stark effect, but this thesis predicts that the local of the peak with respect to the optical bandgap can cause a transition from one to three peaks even with a weak Rabi frequency. The transient linewidth narrowing of PBG crystal

  2. Recent ROB developments on wide bandgap based UV sensors

    Science.gov (United States)

    Giordanengo, B.; Ben Moussa, A.; Hochedez, J.-F.; Soltani, A.; de Moor, P.; Minoglou, K.; Malinowski, P.; Duboz, J.-Y.; Chong, Y. M.; Zou, Y. S.; Zhang, W. J.; Lee, S. T.; Dahal, R.; Li, J.; Lin, J. Y.; Jiang, H. X.

    The next ESA spatial mission planned to study the Sun, Solar Orbiter (SO), necessitates very innovative EUV detectors. The commonly used silicon detectors suffer important limitations mainly in terms of UV robustness and dark current level. An alternative comes from diamond or III-nitride materials. In these materials, the radiation hardness, solar blindness and dark current are improved due to their wide bandgap. This paper presents the new developments on wide bandgap materials at the Royal Observatory of Belgium (ROB). We present also the LYRA instrument, the BOLD project, and the EUI instrument suite.

  3. 滚筒刮拉式香蕉茎秆纤维刮取装置参数优化与试验%Experiment of parameter optimization of fiber roller-scraping device for banana stalk

    Institute of Scientific and Technical Information of China (English)

    张喜瑞; 王超; 梁栋; 李粤

    2016-01-01

    Banana stalk is the main byproduct of banana after harvest. According to statistics, the annual banana production is more than 9 000 000 t in China, and the banana stalk is about 36 600 000 t. Traditionally, quantities of banana stalk are discarded in the field to naturally decay in the main banana planting areas in China, which leads to serious environment pollution, disease spread, waste of resources and other problems due to thick and large banana stalk as well as its high moisture content. Recent studies find that the banana stalk not only contains a variety of nutrients and organic matter, which can effectively increase the organic content of soil, but also is rich in high-quality plant fiber that is light-weight with good moisture absorption and heat dissipation, so it suits for the production of high-grade paper, clothes, ties, and so on. But nowadays domestic and foreign researches most focuse on the immersion method and the biochemical method, and the development of banana stalk fiber extracting device is rarely reported both at home and abroad. Based on the above issues, a fiber roller-scraping device for banana stalk was put forward in this paper, which is mainly composed of clamping device, scraping anvil, scraping roller, cabinet, grid plate, smoothing device, output belt, rack, and recycling box. Before experiment, the roller scraping device needs to be installed in the platform of fiber scraping device for banana stalk, and the banana stalk needs to be cut into slices. After the machine operates steadily, the slices of banana stem are continuously brought into the space between scraping roller and scraping anvil (the distance is 5 mm) in the scraping device with the transmission of the clamping device. Scraping roller rotates with high speed by means of adjustable-speed electric motor power through conveyor belt, and when it scraping, the constant hit makes the banana stem fiber’s biological tissue broken, and separates the disintegrating slag from

  4. Ultrafast spectroscopy of wide bandgap semiconductor nanostructures

    OpenAIRE

    2015-01-01

    Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of highly efficient white LEDs has passed successful developments. A serious physical issue still remained, which prevents their use for high power and highly efficient LEDs: the drop of external quantum efficiency (EQE) of III-nitride LEDs whe...

  5. Effect of Dielectric Constant Contrast and Filling Factor to Photonic Bandgap

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The effect of dielectric constant contrast and the filling factor to the photonic bandgap in a 2-D square lattice photonic crystal is discussed. The location, width and number of photonic bandgap can be modulated.

  6. Effect of Molecular Weight and Processing Additive on the Performance of Low Bandgap Polymer Solar Cells

    Institute of Scientific and Technical Information of China (English)

    赵晓礼; 唐浩为; 杨大磊; 李慧; 徐文涛; 尹丽; 杨小牛

    2012-01-01

    In this work, we synthesized a low bandgap polymer polysilole(-2,6-diyl-alt-5-octylthieno[3,4-c]pyrrole-4,6- dione) (PDTSTPD) with different molecular weights (Mn). The devices based on PDTSTPD/PC71BM composite are prepared and the dependence of power conversion efficiency (PCE) of the devices on the M,1 of conjugated poly- mers is addressed. We found the hole mobility of PDTSTPD is dependent on the Mn of the polymer, which should be the main reason contributing to the drastic difference of device performance, i.e. the PCE of the device using 10 kDa polymer is only 0.52%, in contrast to 2.3% for 24 kDa polymer device. This PCE data is then further improved to 5.0% via using 1,8-diiodoctane as processing additive to achieve an optimized morphology for the photoactive layer with an appropriate length-scale of phase separation for both exciton dissociation and charge transportation.

  7. Distributed mode filtering rod fiber amplifier delivering 292W with improved mode stability

    DEFF Research Database (Denmark)

    Laurila, Marko; Jørgensen, Mette Marie; Hansen, Kristian Rymann;

    2012-01-01

    We demonstrate a high power fiber (85μm core) amplifier delivering up to 292Watts of average output power using a mode-locked 30ps source at 1032nm. Utilizing a single mode distributed mode filter bandgap rod fiber, we demonstrate 44% power improvement before the threshold-like onset of mode...

  8. Hierarchically Structured Electrospun Fibers

    Directory of Open Access Journals (Sweden)

    Nicole E. Zander

    2013-01-01

    Full Text Available Traditional electrospun nanofibers have a myriad of applications ranging from scaffolds for tissue engineering to components of biosensors and energy harvesting devices. The generally smooth one-dimensional structure of the fibers has stood as a limitation to several interesting novel applications. Control of fiber diameter, porosity and collector geometry will be briefly discussed, as will more traditional methods for controlling fiber morphology and fiber mat architecture. The remainder of the review will focus on new techniques to prepare hierarchically structured fibers. Fibers with hierarchical primary structures—including helical, buckled, and beads-on-a-string fibers, as well as fibers with secondary structures, such as nanopores, nanopillars, nanorods, and internally structured fibers and their applications—will be discussed. These new materials with helical/buckled morphology are expected to possess unique optical and mechanical properties with possible applications for negative refractive index materials, highly stretchable/high-tensile-strength materials, and components in microelectromechanical devices. Core-shell type fibers enable a much wider variety of materials to be electrospun and are expected to be widely applied in the sensing, drug delivery/controlled release fields, and in the encapsulation of live cells for biological applications. Materials with a hierarchical secondary structure are expected to provide new superhydrophobic and self-cleaning materials.

  9. Low bandgap polymers synthesized by FeCl{sub 3} oxidative polymerization

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Tianqi [Materials and Surface Chemistry/Polymer Technology, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden); School of Materials Science and Engineering, East China University of Science and Technology, Meilong Road 130, 200237 Shanghai (China); Zhou, Yi; Zhang, Fengling; Inganaes, Olle [Biomolecular and Organic Electronics, IFM, and Centre of Organic Electronics, Linkoeping University, SE-581 83 Linkoeping (Sweden); Wang, Ergang; Hellstroem, Stefan [Materials and Surface Chemistry/Polymer Technology, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden); Xu, Shiai [School of Materials Science and Engineering, East China University of Science and Technology, Meilong Road 130, 200237 Shanghai (China); Andersson, Mats R. [Materials and Surface Chemistry/Polymer Technology, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden); Biomolecular and Organic Electronics, IFM, and Centre of Organic Electronics, Linkoeping University, SE-581 83 Linkoeping (Sweden)

    2010-07-15

    Four low bandgap polymers, combining an alkyl thiophene donor with benzo[c][1,2,5]thiadiazole, 2,3-diphenylquinoxaline, 2,3-diphenylthieno[3,4-b]pyrazine and 6,7-diphenyl-[1,2,5]thiadiazolo[3,4-g]quinoxaline acceptors in a donor-acceptor-donor architecture, were synthesized via FeCl{sub 3} oxidative polymerization. The molecular weights of the polymers were improved by introducing o-dichlorobenzene (ODCB) as the reaction solvent instead of the commonly used solvent, chloroform. The photophysical, electrochemical and photovoltaic properties of the resulting polymers were investigated and compared. The optical bandgaps of the polymers vary between 1.0 and 1.9 eV, which is promising for solar cells. The devices spin-coated from an ODCB solution of P1DB:[70]PCBM showed a power conversion efficiency of 1.08% with an open-circuit voltage of 0.91 V and a short-circuit current density of 3.36 mA cm{sup -2} under irradiation from an AM1.5G solar simulator (100 mW cm{sup -2}). (author)

  10. A generation/recombination model assisted with two trap centers in wide band-gap semiconductors

    Science.gov (United States)

    Yamaguchi, Ken; Kuwabara, Takuhito; Uda, Tsuyoshi

    2013-03-01

    A generation/recombination (GR) model assisted with two trap centers has been proposed for studying reverse current on pn junctions in wide band-gap semiconductors. A level (Et1) has been assumed to be located near the bottom of the conduction band and the other (Et2) to be near the top of the valence band. The GR model has been developed by assuming (1) a high-electric field; F, (2) a short distance; d, between trap centers, (3) reduction in an energy-difference; Δeff = |Et1 - Et2| - eFd, and (4) hopping or tunneling conductions between trap centers with the same energy-level (Δeff ≈ 0). The GR rate has been modeled by trap levels, capture cross-sections, trap densities, and transition rate between trap centers. The GR rate, about 1010 greater than that estimated from the single-level model, has been predicted on pn junctions in a material with band-gap of 3.1 eV. Device simulations using the proposed GR model have been demonstrated for SiC diodes with and without a guard ring. A reasonable range for reverse current at room temperature has been simulated and stable convergence has been obtained in a numerical scheme for analyzing diodes with an electrically floating region.

  11. Dipole-induced band-gap reduction in an inorganic cage.

    Science.gov (United States)

    Lv, Yaokang; Cheng, Jun; Steiner, Alexander; Gan, Lihua; Wright, Dominic S

    2014-02-10

    Metal-doped polyoxotitanium cages are a developing class of inorganic compounds which can be regarded as nano- and sub-nano sized molecular relatives of metal-doped titania nanoparticles. These species can serve as models for the ways in which dopant metal ions can be incorporated into metal-doped titania (TiO2 ), a technologically important class of photocatalytic materials with broad applications in devices and pollution control. In this study a series of cobalt(II)-containing cages in the size range ca. 0.7-1.3 nm have been synthesized and structurally characterized, allowing a coherent study of the factors affecting the band gaps in well-defined metal-doped model systems. Band structure calculations are consistent with experimental UV/Vis measurements of the Tix Oy absorption edges in these species and reveal that molecular dipole moment can have a profound effect on the band gap. The observation of a dipole-induced band-gap decrease mechanism provides a potentially general design strategy for the formation of low band-gap inorganic cages.

  12. 21 CFR 872.4620 - Fiber optic dental light.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Fiber optic dental light. 872.4620 Section 872...) MEDICAL DEVICES DENTAL DEVICES Surgical Devices § 872.4620 Fiber optic dental light. (a) Identification. A fiber optic dental light is a device that is a light, usually AC-powered, that consists of glass...

  13. AlN Bandgap Temperature Dependence from its Optical Properties

    Science.gov (United States)

    2008-06-07

    AlN bandgap temperature dependence from its optical properties E. Silveira a,, J.A. Freitas b, S.B. Schujman c, L.J. Schowalter c a Depto. de Fisica ...range. The energy gap in semiconductors in general changes due to contributions from the electron–phonon interaction and due to the lattice thermal

  14. Design for maximum band-gaps in beam structures

    DEFF Research Database (Denmark)

    Olhoff, Niels; Niu, Bin; Cheng, Gengdong

    2012-01-01

    This paper aims to extend earlier optimum design results for transversely vibrating Bernoulli-Euler beams by determining new optimum band-gap beam structures for (i) different combinations of classical boundary conditions, (ii) much larger values of the orders n and n-1 of adjacent upper and lower...

  15. Automating Energy Bandgap Measurements in Semiconductors Using LabVIEW

    Science.gov (United States)

    Garg, Amit; Sharma, Reena; Dhingra, Vishal

    2010-01-01

    In this paper, we report the development of an automated system for energy bandgap and resistivity measurement of a semiconductor sample using Four-Probe method for use in the undergraduate laboratory of Physics and Electronics students. The automated data acquisition and analysis system has been developed using National Instruments USB-6008 DAQ…

  16. Analysis of photonic band-gap structures in stratified medium

    DEFF Research Database (Denmark)

    Tong, Ming-Sze; Yinchao, Chen; Lu, Yilong;

    2005-01-01

    Purpose - To demonstrate the flexibility and advantages of a non-uniform pseudo-spectral time domain (nu-PSTD) method through studies of the wave propagation characteristics on photonic band-gap (PBG) structures in stratified medium Design/methodology/approach - A nu-PSTD method is proposed...

  17. Optically controlled photonic bandgap structures for microstrip circuits

    CERN Document Server

    Cadman, D A

    2003-01-01

    This thesis is concerned with the optical control of microwave photonic bandgap circuits using high resistivity silicon. Photoconducting processes that occur within silicon are investigated. The influence of excess carrier density on carrier mobility and lifetime is examined. In addition, electron-hole pair recombination mechanisms (Shockley-Read-Hall, Auger, radiative and surface) are investigated. The microwave properties of silicon are examined, in particular the variation of silicon reflectivity with excess carrier density. Filtering properties of microstrip photonic bandgap structures and how they may be controlled optically are studied. A proof-of-concept microstrip photonic bandgap structure with optical control is designed, simulated and measured. With no optical illumination incident upon the silicon, the microstrip photonic bandgap structure's filtering properties are well-defined; a 3dB stopband width of 2.6GHz, a 6dB bandwidth of 2GHz and stopband depth of -11.6dB at the centre frequency of 9.9GHz...

  18. Spontaneous emission and nonlinear effects in photonic bandgap materials

    Science.gov (United States)

    Fogel, Ishella S.; Bendickson, Jon M.; Tocci, Michael D.; Bloemer, Mark J.; Scalora, Michael; Bowden, Charles M.; Dowling, Jonathan P.

    1998-03-01

    We summarize and review our theoretical and experimental work on spontaneous emission and nonlinear effects in one-dimensional, photonic bandgap (PBG) structures. We present a new result: a method for calculating the normal-mode solutions - and hence the spontaneous emission of embedded emitters - in an arbitrary, linear, lossless, one-dimensional, PBG structure.

  19. Graded-Bandgap Solar Cells Using All-Electrodeposited ZnS, CdS and CdTe Thin-Films

    Directory of Open Access Journals (Sweden)

    Obi K. Echendu

    2015-05-01

    Full Text Available A 3-layer graded-bandgap solar cell with glass/FTO/ZnS/CdS/CdTe/Au structure has been fabricated using all-electrodeposited ZnS, CdS and CdTe thin layers. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form glass/FTO/ZnS/CdS/CdTe/Au solar cell resulted in the formation of this 3-layer graded-bandgap device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >10% under AM1.5 illumination conditions at room temperature, compared to the 8.0% efficiency of a 2-layer glass/FTO/CdS/CdTe/Au reference solar cell structure. These results demonstrate the advantages of the multi-layer graded-bandgap device architecture over the conventional 2-layer structure. In addition, they demonstrate the effective application of the two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors with the elimination of the reference electrode as a possible impurity source.

  20. Direct bandgap GeSn light emitting diodes for short-wave infrared applications grown on Si

    Science.gov (United States)

    von den Driesch, Nils; Stange, Daniela; Wirths, Stephan; Rainko, Denis; Mussler, Gregor; Stoica, Toma; Ikonic, Zoran; Hartmann, Jean-Michel; Grützmacher, Detlev; Mantl, Siegfried; Buca, Dan

    2016-03-01

    The experimental demonstration of fundamental direct bandgap, group IV GeSn alloys has constituted an important step towards realization of the last missing ingredient for electronic-photonic integrated circuits, i.e. the efficient group IV laser source. In this contribution, we present electroluminescence studies of reduced-pressure CVD grown, direct bandgap GeSn light emitting diodes (LEDs) with Sn contents up to 11 at.%. Besides homojunction GeSn LEDs, complex heterojunction structures, such as GeSn/Ge multi quantum wells (MQWs) have been studied. Structural and compositional investigations confirm high crystalline quality, abrupt interfaces and tailored strain of the grown structures. While also being suitable for light absorption applications, all devices show light emission in a narrow short-wave infrared (SWIR) range. Temperature dependent electroluminescence (EL) clearly indicates a fundamentally direct bandgap in the 11 at.% Sn sample, with room temperature emission at around 0.55 eV (2.25 µm). We have, however, identified some limitations of the GeSn/Ge MQW approach regarding emission efficiency, which can be overcome by introducing SiGeSn ternary alloys as quantum confinement barriers.

  1. Novel photonic bandgap based architectures for quantum computers and networks

    Science.gov (United States)

    Guney, Durdu

    All of the approaches for quantum information processing have their own advantages, but unfortunately also their own drawbacks. Ideally, one would merge the most attractive features of those different approaches in a single technology. We envision that large-scale photonic crystal (PC) integrated circuits and fibers could be the basis for robust and compact quantum circuits and processors of the next generation quantum computers and networking devices. Cavity QED, solid-state, and (non)linear optical models for computing, and optical fiber approach for communications are the most promising candidates to be improved through this novel technology. In our work, we consider both digital and analog quantum computing. In the digital domain, we first perform gate-level analysis. To achieve this task, we solve the Jaynes-Cummings Hamiltonian with time-dependent coupling parameters under the dipole and rotating-wave approximations for a 3D PC single-mode cavity with a sufficiently high Q-factor. We then exploit the results to show how to create a maximally entangled state of two atoms and how to implement several quantum logic gates: a dual-rail Hadamard gate, a dual-rail NOT gate, and a SWAP gate. In all of these operations, we synchronize atoms, as opposed to previous studies with PCs. The method has the potential for extension to N-atom entanglement, universal quantum logic operations, and the implementation of other useful, cavity QED-based quantum information processing tasks. In the next part of the digital domain, we study circuit-level implementations. We design and simulate an integrated teleportation and readout circuit on a single PC chip. The readout part of our device can not only be used on its own but can also be integrated with other compatible optical circuits to achieve atomic state detection. Further improvement of the device in terms of compactness and robustness is possible by integrating with sources and detectors in the optical regime. In the analog

  2. Silicon photonics for multicore fiber communication

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld;

    2016-01-01

    We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

  3. Optimization of molecular organization and nanoscale morphology for high performance low bandgap polymer solar cells.

    Science.gov (United States)

    He, Ming; Wang, Mengye; Lin, Changjian; Lin, Zhiqun

    2014-04-21

    Rational design and synthesis of low bandgap (LBG) polymers with judiciously tailored HOMO and LUMO levels have emerged as a viable route to high performance polymer solar cells with power conversion efficiencies (PCEs) exceeding 10%. In addition to engineering the energy-level of LBG polymers, the photovoltaic performance of LBG polymer-based solar cells also relies on the device architecture, in particular the fine morphology of the photoactive layer. The nanoscale interpenetrating networks composed of nanostructured donor and acceptor phases are the key to providing a large donor-acceptor interfacial area for maximizing the exciton dissociation and offering a continuous pathway for charge transport. In this Review Article, we summarize recent strategies for tuning the molecular organization and nanoscale morphology toward an enhanced photovoltaic performance of LBG polymer-based solar cells.

  4. Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons

    Science.gov (United States)

    Poljak, M.; Wang, K. L.; Suligoj, T.

    2015-06-01

    We report the results of multi-scale modeling of ultra-narrow graphene nanoribbons (GNRs) that combines atomistic non-equilibrium Green's function (NEGF) approach with semiclassical mobility modeling. The variability of the transport gap and carrier mobility caused by random edge defects is analyzed. We find that the variability increases as the GNR width is downscaled and that even the minimum variation of the total mobility reaches more than 100% compared to average mobility in edge-defected nanoribbons. It is shown that scattering by optical phonons exhibits significantly more variability than the acoustic, line-edge roughness and Coulomb scattering mechanisms. The simulation results demonstrate that sub-5 nm-wide nanoribbons offer no improvement over conventional bulk semiconductors, however, GNRs are comparable with sub-7 nm-thick silicon-on-insulator devices in terms of mobility-bandgap trade-off characteristics.

  5. Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

    Directory of Open Access Journals (Sweden)

    Luigi Sirleto

    2010-11-01

    Full Text Available Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

  6. Chalcogenide glass hollow core photonic crystal fibers

    Science.gov (United States)

    Désévédavy, Frédéric; Renversez, Gilles; Troles, Johann; Houizot, Patrick; Brilland, Laurent; Vasilief, Ion; Coulombier, Quentin; Traynor, Nicholas; Smektala, Frédéric; Adam, Jean-Luc

    2010-09-01

    We report the first hollow core photonic crystal fibers (HC PCF) in chalcogenide glass. To design the required HC PCF profiles for such high index glass, we use both band diagram analysis to define the required photonic bandgap and numerical simulations of finite size HC PCFs to compute the guiding losses. The material losses have also been taken into account to compute the overall losses of the HC PCF profiles. These fibers were fabricated by the stack and draw technique from TeAsSe (TAS) glass. The fibers we drew in this work are composed of six rings of holes and regular microstructures. Two profiles are presented, one is known as a kagome lattice and the other one corresponds to a triangular lattice. Geometrical parameters are compared to the expected parameters obtained by computation. Applications of such fibers include power delivery or fiber sensors among others.

  7. Terahertz Fibres and Functional FibreI-Based Devices

    DEFF Research Database (Denmark)

    Bao, Hualong

    fiber. The fabrication and experimental characterization of such a PBG THz fiber are also performed. The fiber is made of polymer TOPAS and confirm that it allows to fabricate long lengths of fiber with a near-perfect periodic structure and thus very clear bandgap guidance. The fundamental bandgap at 0...... removing the interfering fields that bounce through the cladding and back into the core in a traditional low-loss ARROW tube waveguide. The same effect has been obtained by adding a thin layer of a suitable absorber around the tube surface, here exemplified with water. We also designed and demonstrated...... another kind of tube waveguides consist of a uniform air-core and a cladding layer with tapered thickness. Results show that the same effect of the highly absorbing cladding material tube waveguides can also be obtained, thus breaking the cladding material limitation. Finally, we investigate a special...

  8. Terahertz Fibres and Functional FibreI-Based Devices

    DEFF Research Database (Denmark)

    Bao, Hualong

    and cleaved. We then focus on tube waveguides. Three different methods are used to improve the transmission bandwidth and dispersion properties, while the propagation loss can be kept generally low. The first way is to deliberately introduce high material absorption to the cladding material, thus efficiently...... fiber. The fabrication and experimental characterization of such a PBG THz fiber are also performed. The fiber is made of polymer TOPAS and confirm that it allows to fabricate long lengths of fiber with a nearperfect periodic structure and thus very clear bandgap guidance. The fundamental bandgap at 0...... another kind of tube waveguides consist of a uniform air-core and a cladding layer with tapered thickness. Results show that the same effect of the highly absorbing cladding material tube waveguides can also be obtained, thus breaking the cladding material limitation. Finally, we investigate a special...

  9. Photon absorption and photocurrent in solar cells below semiconductor bandgap due to electron photoemission from plasmonic nanoantennas

    DEFF Research Database (Denmark)

    Novitsky, Andrey; Uskov, Alexander; Gritti, Claudia;

    2014-01-01

    We model the electron photoemission frommetal nanoparticles into a semiconductor in a Schottky diode with a conductive oxide electrode hosting the nanoparticles. We show that plasmonic effects in the nanoparticles lead to a substantial enhancement in photoemission compared with devices with conti....... Such structure can form the dais of the development of plasmonic photoemission enhanced solar cells....... with continuous metal films. Optimally designed metal nanoparticles can provide an effectivemechanismfor the photon absorption in the infrared range below the semiconductor bandgap, resulting in the generation of a photocurrent in addition to the photocurrent from band-to-band absorption in a semiconductor...

  10. Tunable narrow-bandpass filter based on an asymmetric photonic bandgap structure with a dual-mode liquid crystal.

    Science.gov (United States)

    Wang, Hsiao-Tsung; Timofeev, Ivan V; Chang, Kai; Zyryanov, Victor Ya; Lee, Wei

    2014-06-16

    A one-dimensional asymmetric photonic crystal with dual-frequency liquid crystal as a central defect layer was demonstrated. Such asymmetric structure was characterized by the dramatic increase in intensity of the electric field of light localized at the overlapped photonic bandgap edges, thereby enhancing the observed transmittance of the spectral windows originating from the defect layer. The defect layer was made of a dual-mode liquid crystal that exhibited not only electrical tunability and switchability but also optical bistability. Consequently, tunable and bistable defect modes can be realized in the photonic structure. This asymmetric photonic crystal structure is promising and should be further explored for photonic device applications.

  11. A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction.

    Science.gov (United States)

    Ovsyannikov, Sergey V; Karkin, Alexander E; Morozova, Natalia V; Shchennikov, Vladimir V; Bykova, Elena; Abakumov, Artem M; Tsirlin, Alexander A; Glazyrin, Konstantin V; Dubrovinsky, Leonid

    2014-12-23

    An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.

  12. Banana Stem Fiber Scraping Device Hybrid Optimization Design Based on Response Surface Methodology%基于响应面分析法的香蕉茎秆纤维刮杂装置优化设计

    Institute of Scientific and Technical Information of China (English)

    刘磊; 梁栋; 李粤; 蔡毅; 宋德庆; 薛忠

    2017-01-01

    In order to optimize the banana stem fiber extraction scraping machine complex parts of the device structure to improve the fiber quality extraction, by scraping the impurity unit knife roller speed, blade spacing, knife arc length as influencing factors, using response surface optimization design method, established the mathematical model between influ-ence factors and fiber extraction rate to determine the optimum combination of parameters. Experiments show that when banana fibre extraction machine scraping miscellaneous devices influence factor of actual parameters for knife roller speed 1200R / min, the blade pitch 110 mm, fixed blade arc length of 50 mm, fiber extraction rate average reaches 92. 6%, in line with the optimization target and production requirements. The research results can provide theoretical basis and i-deas for the development and application of plant fiber extraction device.%为了优化香蕉茎秆纤维提取机刮杂装置部件结构,提高纤维提取质量,以刮杂装置的刀辊速度、刀片间距、定刀弧长为影响因子,采用响应面优化设计方法,建立了影响因子与纤维提取率之间的数学模型,确定了较优的参数组合。试验表明:当香蕉纤维提取机刮杂装置影响因子的实际参数为刀辊转速1200r/min、刀片间距110mm、定刀弧长50mm 时,纤维提取率平均可达到92.6%,符合优化目标及生产要求。研究结果可为植物纤维提取装置的研发和应用提供理论依据和思路。

  13. Omnidirectional bandgaps in Fibonacci quasicrystals containing single-negative materials.

    Science.gov (United States)

    Deng, Xin-Hua; Liu, Jiang-Tao; Huang, Jie-Hui; Zou, Liner; Liu, Nian-Hua

    2010-02-10

    The band structure and bandgaps of one-dimensional Fibonacci quasicrystals composed of epsilon-negative materials and mu-negative materials are studied. We show that an omnidirectional bandgap (OBG) exists in the Fibonacci structure. In contrast to the Bragg gaps, such an OBG is insensitive to the incident angle and the polarization of light, and the width and location of the OBG cease to change with increasing Fibonacci order, but vary with the thickness ratio of both components, and the OBG closes when the thickness ratio is equal to the golden ratio. Moreover, the general formulations of the higher and lower band edges of the OBG are obtained by the effective medium theory. These results could lead to further applications of Fibonacci structures.

  14. Quantum electrodynamics near a photonic band-gap

    Science.gov (United States)

    Liu, Yanbing; Houck, Andrew

    Quantum electrodynamics predicts the localization of light around an atom in photonic band-gap (PBG) medium or photonic crystal. Here we report the first experimental realization of the strong coupling between a single artificial atom and an one dimensional PBG medium using superconducting circuits. In the photonic transport measurement, we observe an anomalous Lamb shift and a large band-edge avoided crossing when the artificial atom frequency is tuned across the band-edge. The persistent peak within the band-gap indicates the single photon bound state. Furthermore, we study the resonance fluorescence of this bound state, again demonstrating the breakdown of the Born-Markov approximation near the band-edge. This novel architecture can be directly generalized to study many-body quantum electrodynamics and to construct more complicated spin chain models.

  15. Low Loss Plastic Terahertz Photonic Band-Gap Fibres

    Institute of Scientific and Technical Information of China (English)

    GENG You-Fu; TAN Xiao-Ling; ZHONG Kai; WANG Peng; YAO Jian-Quan

    2008-01-01

    We report a numerical investigation on terahertz wave propagation in plastic photonic band-gap fibres which are characterized by a 19-unit-cell air core and hexagonal air holes with rounded corners in cladding. Using the finite element method, the leakage loss and absorption loss are calculated and the transmission properties are analysed.The lowest loss of 0.268 dB/m is obtained. Numerical results show that the fibres could liberate the constraints of background materials beyond the transparency region in terahertz wave band, and efficiently minimize the effect of absorption by background materials, which present great advantage of plastic photonic band-gap fibres in long distance terahertz delivery.

  16. Bandgap narrowing in moderately to heavily doped silicon

    Science.gov (United States)

    Lanyon, H. P. D.; Tuft, R. A.

    1979-01-01

    A theoretical model of bandgap narrowing in silicon at high doping levels has been developed. The model takes into account the electrostatic energy of interaction between a minority carrier and the majority carriers surrounding it, which reduces the thermal energy necessary for creation of an electron-hole pair. A pair energy similar to the excitonic binding energy of bound electron-hole pairs in insulators is obtained. Theoretical results are in excellent agreement with experimental results in the doping range from 3 times 10 to the 17th to 1.5 times 10 to the 20th/cu cm at room temperature. These results indicate that at high injection levels such as a transistor biased into the conductivity-modulation regime or a solar cell whose surface is established by ion implantation into an oxide layer, the bandgap narrowing is determined by the injected carrier concentration rather than by the doping level.

  17. High extinction ratio bandgap of photonic crystals in LNOI wafer

    Science.gov (United States)

    Zhang, Shao-Mei; Cai, Lu-Tong; Jiang, Yun-Peng; Jiao, Yang

    2017-02-01

    A high-extinction-ratio bandgap of air-bridge photonic crystal slab, in the near infrared, is reported. These structures were patterned in single-crystalline LiNbO3 film bonded to SiO2/LiNbO3 substrate by focused ion beam. To improve the vertical confinement of light, the SiO2 layer was removed by 3.6% HF acid. Compared with photonic crystals sandwiched between SiO2 and air, the structures suspending in air own a robust photonic bandgap and high transmission efficiency at valence band region. The measured results are in good agreement with numerically computed transmission spectra by finite-difference time-domain method. The air-bridge photonic crystal waveguides were formed by removing one line holes. We reveal experimentally the guiding characteristics and calculate the theoretical results for photonic crystal waveguides in LiNbO3 film.

  18. Composition/bandgap selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, C.I.H.; Dishman, J.L.

    1985-10-11

    Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  19. Composition/bandgap selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, Carol I. H. (Edgewood, NM); Dishman, James L. (Albuquerque, NM)

    1987-01-01

    A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  20. Composition/bandgap selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, C.I.H.; Dishman, J.L.

    1987-03-10

    A method is described of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap E/sub g1/ in the presence of a second semiconductor material of a different composition and direct bandgap E/sub g2/, wherein E/sub g2/>E/sub g1/. The second semiconductor material is not substantially etched during the method, comprising subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where the etchant would be ineffective for chemical etching of either material where the photons are not present, the photons being of an energy greater than E/sub g1/ but less than E/sub g2/, whereby the first semiconductor material is photochemically etched and the second material is substantially not etched.

  1. Band structure of germanium carbides for direct bandgap silicon photonics

    Science.gov (United States)

    Stephenson, C. A.; O'Brien, W. A.; Penninger, M. W.; Schneider, W. F.; Gillett-Kunnath, M.; Zajicek, J.; Yu, K. M.; Kudrawiec, R.; Stillwell, R. A.; Wistey, M. A.

    2016-08-01

    Compact optical interconnects require efficient lasers and modulators compatible with silicon. Ab initio modeling of Ge1-xCx (x = 0.78%) using density functional theory with HSE06 hybrid functionals predicts a splitting of the conduction band at Γ and a strongly direct bandgap, consistent with band anticrossing. Photoreflectance of Ge0.998C0.002 shows a bandgap reduction supporting these results. Growth of Ge0.998C0.002 using tetrakis(germyl)methane as the C source shows no signs of C-C bonds, C clusters, or extended defects, suggesting highly substitutional incorporation of C. Optical gain and modulation are predicted to rival III-V materials due to a larger electron population in the direct valley, reduced intervalley scattering, suppressed Auger recombination, and increased overlap integral for a stronger fundamental optical transition.

  2. Treating temperature effect on bandgap in polymer opal photonic crystals

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The optical reflective spectra and microstruc- tures of polystyrene opal photonic crystals treated with dif- ferent temperatures have been investigated. With tempera- ture increasing, the polystyrene spheres in opal structure transform to dodecahedrons, and the peak of reflective spec- trum moves to shorter wavelength. The experiment result testifies the effect of the effective refractive index and the filling ratio to the bandgap position, and it corresponds to the theoretical simulative result.

  3. Structure and optical bandgap relationship of π-conjugated systems.

    Science.gov (United States)

    Botelho, André Leitão; Shin, Yongwoo; Liu, Jiakai; Lin, Xi

    2014-01-01

    In bulk heterojunction photovoltaic systems both the open-circuit voltage as well as the short-circuit current, and hence the power conversion efficiency, are dependent on the optical bandgap of the electron-donor material. While first-principles methods are computationally intensive, simpler model Hamiltonian approaches typically suffer from one or more flaws: inability to optimize the geometries for their own input; absence of general, transferable parameters; and poor performance for non-planar systems. We introduce a set of new and revised parameters for the adapted Su-Schrieffer-Heeger (aSSH) Hamiltonian, which is capable of optimizing geometries, along with rules for applying them to any [Formula: see text]-conjugated system containing C, N, O, or S, including non-planar systems. The predicted optical bandgaps show excellent agreement to UV-vis spectroscopy data points from literature, with a coefficient of determination [Formula: see text], a mean error of -0.05 eV, and a mean absolute deviation of 0.16 eV. We use the model to gain insights from PEDOT, fused thiophene polymers, poly-isothianaphthene, copolymers, and pentacene as sources of design rules in the search for low bandgap materials. Using the model as an in-silico design tool, a copolymer of benzodithiophenes along with a small-molecule derivative of pentacene are proposed as optimal donor materials for organic photovoltaics.

  4. Structure and optical bandgap relationship of π-conjugated systems.

    Directory of Open Access Journals (Sweden)

    André Leitão Botelho

    Full Text Available In bulk heterojunction photovoltaic systems both the open-circuit voltage as well as the short-circuit current, and hence the power conversion efficiency, are dependent on the optical bandgap of the electron-donor material. While first-principles methods are computationally intensive, simpler model Hamiltonian approaches typically suffer from one or more flaws: inability to optimize the geometries for their own input; absence of general, transferable parameters; and poor performance for non-planar systems. We introduce a set of new and revised parameters for the adapted Su-Schrieffer-Heeger (aSSH Hamiltonian, which is capable of optimizing geometries, along with rules for applying them to any [Formula: see text]-conjugated system containing C, N, O, or S, including non-planar systems. The predicted optical bandgaps show excellent agreement to UV-vis spectroscopy data points from literature, with a coefficient of determination [Formula: see text], a mean error of -0.05 eV, and a mean absolute deviation of 0.16 eV. We use the model to gain insights from PEDOT, fused thiophene polymers, poly-isothianaphthene, copolymers, and pentacene as sources of design rules in the search for low bandgap materials. Using the model as an in-silico design tool, a copolymer of benzodithiophenes along with a small-molecule derivative of pentacene are proposed as optimal donor materials for organic photovoltaics.

  5. Defect-induced bandgap narrowing in low-k dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Guo, X.; Zheng, H.; Shohet, J. L. [Plasma Processing & Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); King, S. W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); Afanas' ev, V. V. [Department of Physics, University of Leuven, B-3001 Leuven (Belgium); Baklanov, M. R.; Marneffe, J.-F. de [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Nishi, Y. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

    2015-08-24

    In this work, core-level X-ray photoelectron spectroscopy was utilized to determine the surface bandgap for various porous and non-porous low-k a-SiCOH dielectrics before and after ion sputtering. By examining the onset of inelastic energy loss in O 1s core-level spectra, the gap narrowing was universally found in Ar{sup +} ion sputtered low-k dielectrics. The reduction of the bandgap ranges from 1.3 to 2.2 eV depending on the film composition. We show that the bandgap narrowing in these low-k dielectrics is caused by development of the valence-band tail as evidenced by the presence of additional electronic states above the valence-band maximum. Electron-spin-resonance measurements were made on a-SiCOH films to gain atomic insight into the nature of the sputtering-induced defects and reveal formation of carbon-related defects as the most probable origin of the gap states.

  6. High PSRR bandgap reference used in boost circuit

    Science.gov (United States)

    Li, Yi; Duan, Baoxing; Wang, Yong; Yang, Yintang

    2017-03-01

    Based on pre-regulated voltage structure, a voltage bandgap reference with high power supply rejection ratio (PSRR) is presented in this paper. A pre-regulated voltage structure is used in the circuit to achieve isolating the supply voltage of the bandgap core circuit from VDD to reach a high PSRR. The circuit was designed and simulated in 0.35um BCD technology. The results show the output voltage variation versus temperature (-50°C -100°C) is 8.8 ppm/°C, bandgap reference voltage is 1.236V, current consumption is 30.3 µA. Noise is 53.54 µV/Hz-1/2 at 1Hz. PSRR is -91dB at low frequency, -90.3dB at 1 kHz and -30.3dB at 1MHz. thus, the circuit maintains a good performance in PSRR through a broad frequency.

  7. Feasibility of measuring gastric emptying time, with a wireless motility device, after subjects consume fiber-matched liquid and solid breakfasts.

    Science.gov (United States)

    Willis, Holly J; Thomas, William; Willis, David J; Slavin, Joanne L

    2011-08-01

    To explore the feasibility and sensitivity of a new technology for measuring gastric emptying time (GET) in appetite research, and also to compare appetite after subjects consumed macronutrient- and fiber-matched liquid and solid meals. Fourteen women (BMI of 21.2 ± 0.3) participated in this randomized, crossover study. On two separate days, fasted subjects consumed liquid (fruit juices and skim milk) and solid (oatmeal, blueberries, and apples) breakfasts. Both meals had 10 g of fiber and 410 kcal. GET was assessed with the SmartPill GI Motility System®, appetite was assessed with visual analog scales, and food intake was measured at lunch. Despite the same amount of fiber, GET was about 1h longer after the oatmeal than after the liquids. Subjects were less hungry after the oatmeal than after the liquids. Satisfaction and fullness were marginally improved with the oatmeal compared to the liquids. There was a negative association between GET and hunger. Lunchtime food and beverage intake did not differ between treatments. The SmartPill appears feasible and sensitive in appetite research, but has limitations. A solid meal with naturally occurring fiber from oatmeal and whole fruits increased GET and decreased hunger more than a liquid meal with added fiber.

  8. Efficient photovoltaic cells from low band-gap fluorene-based copolymer

    Institute of Scientific and Technical Information of China (English)

    Tian Ren-Yu; Yang Ren-Qiang; Peng Jun-Biao; Cao Yong

    2005-01-01

    Polymer photovoltaic cells based on low band-gap copolymer, poly [2,7-(9,9-dioctyl) fluorene-co-5,5'-(4,7-diselenophenyl)-2,2'-yl-2,1,3-benzothiadiazole] (PFSeBT) are investigated, focusing on the effects of cathode and blend concentration on device performance. The best device, with active layer from PFSeBT:PCBM=1:2 blend and with LiF/Al as cathode, achieves an open-circuit voltage of 1.00V, a short-circuit current density of 4.42mA/cm2, and energy conversion efficiency of 1.67% under AM1.5 illumination (100mW/cm2).The short-circuit current density indicates the dependence of power law on the incident light intensity with a power index of 0.887. All devices have a spectral response up to 680nm. The results indicate that PFSeBT is a potential polymer functioning as an electron donor in polymer photovoltaic cells.

  9. Infiltration liquid crystal in microstructured polymer optical fibers

    DEFF Research Database (Denmark)

    Yuan, Scott Wu; Wei, Lei; Bang, Ole

    2009-01-01

    POF is butt-coupled to a conventional single mode fiber (SMF) with the broadband light from a supercontinuum source. It is clear to see the colour of the guided modes is red, since some wavelengths are attenuated by the material loss of PMMA in visible region. A positive dielectric anisotropy liquid crystal E......Here, we firstly demonstrate the photonic bandgap effect with PMMA mPOF by filling the air holes with liquid crystal, and subsequently change the light guidance mechanism from index guiding to bandgap guiding. The triangular structure PMMA mPOF used in the experiment is fabricated. A 60 cm length m...

  10. Microstructured fibers for high power applications

    Science.gov (United States)

    Baggett, J. C.; Petrovich, M. N.; Hayes, J. R.; Finazzi, V.; Poletti, F.; Amezcua, R.; Broderick, N. G. R.; Richardson, D. J.; Monro, T. M.; Salter, P. L.; Proudley, G.; O'Driscoll, E. J.

    2005-10-01

    Fiber delivery of intense laser radiation is important for a broad range of application sectors, from medicine through to industrial laser processing of materials, and offers many practical system design and usage benefits relative to free space solutions. Optical fibers for high power transmission applications need to offer low optical nonlinearity and high damage thresholds. Single-mode guidance is also often a fundamental requirement for the many applications in which good beam quality is critical. In recent years, microstructured fiber technology has revolutionized the dynamic field of optical fibers, bringing with them a wide range of novel optical properties. These fibers, in which the cladding region is peppered with many small air holes, are separated into two distinct categories, defined by the way in which they guide light: (1) index-guiding holey fibers (HFs), in which the core is solid and light is guided by a modified form of total internal reflection, and (2) photonic band-gap fibers (PBGFs) in which guidance in a hollow core can be achieved via photonic band-gap effects. Both of these microstructured fiber types offer attractive qualities for beam delivery applications. For example, using HF technology, large-mode-area, pure silica fibers with robust single-mode guidance over broad wavelength ranges can be routinely fabricated. In addition, the ability to guide light in an air-core within PBGFs presents obvious power handling advantages. In this paper we review the fundamentals and current status of high power, high brightness, beam delivery in HFs and PBGFs, and speculate as to future prospects.

  11. Application of Adsorption Device of Activated Carbon Fiber to Recovery of CFCs%活性炭纤维吸附装置在发泡剂CFCs回收中的应用

    Institute of Scientific and Technical Information of China (English)

    薛全民; 崔贵芹; 赵胜

    2012-01-01

    In the process of waste refrigerator disassembly, polyurethane foam would release large quantity of CFC - 11. CFCs was one of important greenhouse gases, so it was important to recycle CFCs from the exhaust gas of waste refrigerator disassembly. The device used activated carbon fiber for adsorption material was described, which had many virtues of automatically, advanced technology, and the use of efficient adsorbents - activated carbon fiber. The operation practice showed that CFCs from waste refrigerator disassembly could be disposed by the device.%在冰箱拆卸过程中,聚氨酯硬质泡沫会释放出大量CFCs,而CFCs是重要的温室气体之一,因此,冰箱拆卸过程中尾气中CFCs回收受到大家重视。本文介绍了利用活性炭纤维回收家电拆卸过程中释放出氟里昂的装置。该装置自动运行,工艺先进,并且利用高效的吸附剂一活性炭纤维。运行实践表明,利用该装置可以有效的处理冰箱拆卸过程中释放出的CFCs。

  12. Grazing incidence angle based sensing approach integrated with fiber-optic Fourier transform infrared (FO-FTIR) spectroscopy for remote and label-free detection of medical device contaminations

    Energy Technology Data Exchange (ETDEWEB)

    Hassan, Moinuddin, E-mail: moinuddin.hassan@fda.hhs.gov; Ilev, Ilko [Optical Therapeutics and Medical Nanophotonics Laboratory, Division of Biomedical Physics, Office of Science and Engineering Laboratories, Center for Devices and Radiological Health, U.S. Food and Drug Administration, Silver Spring, Maryland 20993 (United States)

    2014-10-15

    Contamination of medical devices has become a critical and prevalent public health safety concern since medical devices are being increasingly used in clinical practices for diagnostics, therapeutics and medical implants. The development of effective sensing methods for real-time detection of pathogenic contamination is needed to prevent and reduce the spread of infections to patients and the healthcare community. In this study, a hollow-core fiber-optic Fourier transform infrared spectroscopy methodology employing a grazing incidence angle based sensing approach (FO-FTIR-GIA) was developed for detection of various biochemical contaminants on medical device surfaces. We demonstrated the sensitivity of FO-FTIR-GIA sensing approach for non-contact and label-free detection of contaminants such as lipopolysaccharide from various surface materials relevant to medical device. The proposed sensing system can detect at a minimum loading concentration of approximately 0.7 μg/cm{sup 2}. The FO-FTIR-GIA has the potential for the detection of unwanted pathogen in real time.

  13. Demonstration of orbital angular momentum (OAM) modes emission from a silicon photonic integrated device for 20 Gbit/s QPSK carrying data transmission in few-mode fiber

    DEFF Research Database (Denmark)

    Liu, Jun; Li, Shimao; Ding, Yunhong;

    2016-01-01

    We experimentally demonstrate orbital angular momentum (OAM) mode emission from a high emission efficiency OAM emitter for 20 Gbit/s QPSK carrying data transmission in few-mode fiber (FMF). Two modes propagate through a 3.6km three-mode FMF with measured OSNR penalties less than 4 dB at a BER of 2e...

  14. Local resonance and Bragg bandgaps in sandwich beams containing periodically inserted resonators

    CERN Document Server

    Sharma, Bhisham

    2015-01-01

    We study the low frequency wave propagation behavior of sandwich beams containing periodically embedded internal resonators. A closed form expression for the propagation constant is obtained using a phased array approach and verified using finite element simulations. We show that local resonance and Bragg bandgaps coexist in such a system and that the width of both bandgaps is a function of resonator parameters as well as their periodicity. The interaction between the two bandgaps is studied by varying the local resonance frequency. We find that a single combined bandgap does not exist for this system and that the Bragg bandgaps transition into sub-wavelength bandgaps when the local resonance frequency is above their associated classical Bragg frequency.

  15. A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

    Energy Technology Data Exchange (ETDEWEB)

    Lamichhane, Ranjan [University of Arkansas; Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; BRITTONJr., CHARLES L. [Oak Ridge National Laboratory (ORNL); Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Matt [APEI, Inc.; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas; Podar, Mircea [ORNL; Perez, M [University of Arkansas; Mcnutt, Tyler [APEI, Inc.; Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.

    2014-01-01

    Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.

  16. Maximizing bandgaps in two-dimensional photonic crystals a variational algorithm

    CERN Document Server

    Paul, P; Paul, Prabasaj; Ndi, Francis C.

    2002-01-01

    We present an algorithm for the maximization of photonic bandgaps in two-dimensional crystals. Once the translational symmetries of the underlying structure have been imposed, our algorithm finds a global maximal (and complete, if one exists) bandgap. Additionally, we prove two remarkable results related to maximal bandgaps: the so-called `maximum contrast' rule, and about the location in the Brillouin zone of band edges.

  17. High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters

    Science.gov (United States)

    Wanlass, Mark W.

    2011-11-29

    A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

  18. Narrow bandgap host material for high quantum efficiency yellow phosphorescent organic light-emitting diodes doped with iridium(III) bis(4-phenylthieno[3,2-c]pyridine)acetylacetonate

    Energy Technology Data Exchange (ETDEWEB)

    Yook, Kyoung Soo; Lee, Jun Yeob, E-mail: leej17@skku.edu

    2015-05-15

    A narrow bandgap host material, 4,5-di(9H-carbazol-9-yl)phthalonitrile (2CzPN), was used as a bipolar host material to improve the device performances of yellow phosphorescent organic light-emitting diodes(PHOLEDs). The device performances of the yellow PHOLEDs were optimized at a low doping concentration of 1%. A low turn-on voltage of 3.0 V and high quantum efficiency of 19.3% were achieved using the 2CzPN host material and no efficiency roll-off of the device was observed up to 1000 cd/m{sup 2} compared with 25% of reference device. - Highlights: • High quantum efficiency in yellow phosphorescent organic light-emitting diodes. • Narrow bandgap host material with donor–acceptor structure for low driving voltage. • Low optimum doping concentration of 1% for high quantum efficiency and power efficiency.

  19. Exploring Direct to Indirect Bandgap Transition in Silicon Nanowires: Size Effect

    Science.gov (United States)

    Shi, Lihong; Zhang, Gang

    2016-10-01

    We have investigated the electronic band structure of [110] silicon nanowires (SiNWs) using first-principles calculations. We find that, in the ultrathin diameter regime, SiNWs have a direct bandgap, but the energy difference between the indirect and direct fundamental bandgaps decreases as the nanowire diameter increases. This indicates that larger [110] SiNWs could have an indirect bandgap. Fundamentally, a series of quantitative direct-indirect bandgap transitional diameters are obtained for different cross-sectional geometries, with the largest values for SiNWs with triangular cross section.

  20. Urbach's rule derived from thermal fluctuations in the band-gap energy

    DEFF Research Database (Denmark)

    Skettrup, Torben

    1978-01-01

    The exponential absorption edge (known as Urbach's rule) observed in most materials is interpreted in terms of thermal fluctuations in the band-gap energy. The main contribution to the temperature shift of the band-gap energy is due to the temperature-dependent self-energies of the electrons...... and holes interacting with the phonons. Since the phonon number is fluctuating in thermal equilibrium, the band-gap energy is also fluctuating resulting in an exponential absorption tail below the average band-gap energy. These simple considerations are applied to derive Urbach's rule at high temperatures...

  1. Optical fiber rotation sensing

    CERN Document Server

    Burns, William K; Kelley, Paul

    1993-01-01

    Optical Fiber Rotation Sensing is the first book devoted to Interferometric Fiber Optic Gyros (IFOG). This book provides a complete overview of IFOGs, beginning with a historical review of IFOG development and including a fundamental exposition of basic principles, a discussion of devices and components, and concluding with industry reports on state-of-the-art activity. With several chapters contributed by principal developers of this solid-state device, the result is an authoritative work which will serve as the resource for researchers, students, and users of IFOGs.* * State-of-t

  2. Waveguidance by the photonic bandgap effect in optical fibres

    DEFF Research Database (Denmark)

    Broeng, Jes; Søndergaard, Thomas; Barkou, Stig Eigil;

    1999-01-01

    Photonic crystals form a new class of intriguing building blocks to be utilized in future optoelectronics and electromagnetics. One of the most exciting possiblilties offered by phtonic crystals is the realization of new types of electromagnetic waveguides. In the optical domain, the most mature...... technology for such photonic bandgap (PBG) waveguides is in optical fibre configurations. These new fibres can be classified in a fundamentally different way to all optical waveguides and possess radically different guiding properties due to PBG guidance, as opposed to guidance by total internal refelction...

  3. A Modeling of Photonic Crystal Fiber with a Boundary Integral Equations

    Science.gov (United States)

    Cho, Min Hyung; Cai, Wei; Her, Tsing-Hua; Lee, Youngpak

    2007-03-01

    A boundary integral equation (BIE) for the photonic crystal fiber is formulated using the free space Green's function and Huygen's principle. The BIE reduces the number of unknowns significantly and is flexible to handle the geometry of the fiber owing to its nature of the formulation. The real and imaginary parts of the propagating constant, which is related to the dispersion and the confinement loss of the fiber, are calculated as a function of wavelength for both the air-silica fiber and the photonic bandgap fiber by the root searching method. The numerical simulations show that the air-silica fiber guides the light according to the total internal reflection and that the photonic bandgap fiber guides the light based on the scattering from the Fabry-Perot-like high-index inclusion. As a consequence, the spectrum of photonic bandgap fiber shows the discontinuities, and the locations of discontinuities obtained with BIE are compared with the simple analytical model based on the AntiResonant Reflecting Optical Waveguide (ARROW) model suggested by Natalie et al.

  4. Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap

    Science.gov (United States)

    Mohsen, Mahmoudi; Zahra, Ahangari; Morteza, Fathipour

    2016-01-01

    The electrical characteristics of a double-gate armchair silicene nanoribbon field-effect-transistor (DG ASiNR FET) are thoroughly investigated by using a ballistic quantum transport model based on non-equilibrium Green’s function (NEGF) approach self-consistently coupled with a three-dimensional (3D) Poisson equation. We evaluate the influence of variation in uniaxial tensile strain, ribbon temperature and oxide thickness on the on-off current ratio, subthreshold swing, transconductance and the delay time of a 12-nm-length ultranarrow ASiNR FET. A novel two-parameter strain magnitude and temperature-dependent model is presented for designing an optimized device possessing balanced amelioration of all the electrical parameters. We demonstrate that employing HfO2 as the gate insulator can be a favorable choice and simultaneous use of it with proper combination of temperature and strain magnitude can achieve better device performance. Furthermore, a general model power (GMP) is derived which explicitly provides the electron effective mass as a function of the bandgap of a hydrogen passivated ASiNR under strain.

  5. Atomically thin arsenene and antimonene: semimetal-semiconductor and indirect-direct band-gap transitions.

    Science.gov (United States)

    Zhang, Shengli; Yan, Zhong; Li, Yafei; Chen, Zhongfang; Zeng, Haibo

    2015-03-01

    The typical two-dimensional (2D) semiconductors MoS2, MoSe2, WS2, WSe2 and black phosphorus have garnered tremendous interest for their unique electronic, optical, and chemical properties. However, all 2D semiconductors reported thus far feature band gaps that are smaller than 2.0 eV, which has greatly restricted their applications, especially in optoelectronic devices with photoresponse in the blue and UV range. Novel 2D mono-elemental semiconductors, namely monolayered arsenene and antimonene, with wide band gaps and high stability were now developed based on first-principles calculations. Interestingly, although As and Sb are typically semimetals in the bulk, they are transformed into indirect semiconductors with band gaps of 2.49 and 2.28 eV when thinned to one atomic layer. Significantly, under small biaxial strain, these materials were transformed from indirect into direct band-gap semiconductors. Such dramatic changes in the electronic structure could pave the way for transistors with high on/off ratios, optoelectronic devices working under blue or UV light, and mechanical sensors based on new 2D crystals.

  6. Holey fiber amplifiers and lasers

    OpenAIRE

    Richardson, D J; Furusawa, K.; Kogure, T.; Price, J.H.V.; Lee, J.H.; Monro, T.M.

    2004-01-01

    We review our recent activities in the development of small-core, active holey fibers and describe a number of experiments that highlight the advantages of this technology within a range of both linear and nonlinear devices.

  7. Time-resolved measurements of charge carrier dynamics and optical nonlinearities in narrow-bandgap semiconductors

    Science.gov (United States)

    Olson, Benjamin Varberg

    All-optical time-resolved measurement techniques provide a powerful tool for investigating critical parameters that determine the performance of infrared photodetector and emitter semiconductor materials. Narrow-bandgap InAs/GaSb type-II superlattices (T2SLs) have shown great promise as a next generation source of these materials, due to superior intrinsic properties and versatility. Unfortunately, InAs/GaSb T2SLs are plagued by parasitic Shockley-Read-Hall recombination centers that shorten the carrier lifetime and limit device performance. Ultrafast pump-probe techniques and time-resolved differential transmission measurements are used here to demonstrate that Ga-free InAs/InAsSb T2SLs and InAsSb alloys do not have this same limitation and thus have significantly longer carrier lifetimes. Measurements at 77 K provided minority carrier lifetimes of 9 mus and 3 mus for an unintentionally doped mid-wave infrared (MWIR) InAs/InAsSb T2SL and InAsSb alloy, respectively; a two order of magnitude increase compared to the 90 ns minority carrier lifetime measured in a comparable MWIR InAs/GaSb T2SL. Through temperature-dependent lifetime measurements, the various carrier recombination processes are differentiated and the dominant mechanisms identified for each material. These results demonstrate that these Ga-free materials are viable options over InAs/GaSb T2SLs for potentially improved infrared photodetectors. In addition to carrier lifetimes, the drift and diffusion of excited charge carriers through the superlattice growth layers (i.e. vertical transport) directly affects the performance of photodetectors and emitters. Unfortunately, there is a lack of information pertaining to vertical transport, primarily due to difficulties in making measurements on thin growth layers and the need for non-standard measurement techniques. However, all-optical ultrafast techniques are successfully used here to directly measure vertical diffusion in MWIR InAs/GaSb T2SLs. By optically

  8. DEVELOPMENT OF A CANDLE FILTER FAILURE SAFEGUARD DEVICE

    Energy Technology Data Exchange (ETDEWEB)

    G.J. Bruck; E.E. Smeltzer; Z.N. Sanjana

    2002-06-06

    Development, testing and optimization of advanced metal and ceramic, barrier and fiber safeguard devices (SGDs) is described. Metal barrier devices are found prone to manufacturing defects and premature blinding. Fiber devices are found to be satisfactory if fine fibers are used. Durable alloys are identified for both oxidation and gasification conditions. Ceramic honeycomb SGDs were found to perform as excellent barrier devices. Optimization has shown such devices to be durable. Field testing of ceramic honeycomb SGDs from two different manufacturers is being pursued.

  9. Electronic structure characterization and bandgap engineeringofsolar hydrogen materials

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jinghua

    2007-11-01

    Bandgap, band edge positions as well as the overall band structure of semiconductors are of crucial importance in photoelectrochemical and photocatalytic applications. The energy position of the band edge level can be controlled by the electronegativity of the dopants, the pH of the solution (flatband potential variation of 60 mV per pH unit), as well as by quantum confinement effects. Accordingly, band edges and bandgap can be tailored to achieve specific electronic, optical or photocatalytic properties. Synchrotron radiation with photon energy at or below 1 keV is giving new insight into such areas as condensed matter physics and extreme ultraviolet optics technology. In the soft x-ray region, the question tends to be, what are the electrons doing as they migrated between the atoms. In this paper, I will present a number of soft x-ray spectroscopic study of nanostructured 3d metal compounds Fe{sub 2}O{sub 3} and ZnO.

  10. Lyapunov exponents for one-dimensional aperiodic photonic bandgap structures

    Science.gov (United States)

    Kissel, Glen J.

    2011-10-01

    Existing in the "gray area" between perfectly periodic and purely randomized photonic bandgap structures are the socalled aperoidic structures whose layers are chosen according to some deterministic rule. We consider here a onedimensional photonic bandgap structure, a quarter-wave stack, with the layer thickness of one of the bilayers subject to being either thin or thick according to five deterministic sequence rules and binary random selection. To produce these aperiodic structures we examine the following sequences: Fibonacci, Thue-Morse, Period doubling, Rudin-Shapiro, as well as the triadic Cantor sequence. We model these structures numerically with a long chain (approximately 5,000,000) of transfer matrices, and then use the reliable algorithm of Wolf to calculate the (upper) Lyapunov exponent for the long product of matrices. The Lyapunov exponent is the statistically well-behaved variable used to characterize the Anderson localization effect (exponential confinement) when the layers are randomized, so its calculation allows us to more precisely compare the purely randomized structure with its aperiodic counterparts. It is found that the aperiodic photonic systems show much fine structure in their Lyapunov exponents as a function of frequency, and, in a number of cases, the exponents are quite obviously fractal.

  11. Graded bandgap semiconduc-tor thin film photoelectrodes

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    A graded bandgap oxide semiconductor thin film electrode was designed in order to obtain a photoelectrochemically stable photoelectrode, with wide absorption range. The graded bandgap Ti1-xVxO2 film electrode was prepared by heating the stacked layers of V/Ti in varying ratios, which were coated on the substrate by the sol-gel method using the starting solution with various V/Ti ratios. XPS result showed that the composition gradient was achieved for the film. The Ti1-xVxO2 film electrode was found to be photoelectrochemically stable. Its photovoltage was about 360 mV. Obvious visible light photoresponse was observed for the Ti1-xVxO2 film electrode. Compared with the pure TiO2 electrode, the photocurrent onset potential of the Ti1-xVxO2 film electrode was shifted positively, probably because the accumulation of vanadium at the electrode sur-face causes the recombination of the electrons and holes, and the lowest level of the conduction band of Ti1-xVxO2 is lower than that of TiO2. Impedance analysis showed that the donor density of the Ti1-xVxO2 film electrode was higher than that of TiO2 film electrode.

  12. Infrared photoresponse of silicon devices at 1.15 microns

    Science.gov (United States)

    Lanyon, H. P. D.; Mccurdy, A. K.; Tuft, R. A.

    1978-01-01

    The photoconductive absorption of silicon devices at 1.15 microns is through band-to-band transitions with the simultaneous absorption of a 57.7 meV phonon. Its temperature dependence arises both from the changing phonon population and, more significantly, from the change in silicon bandgap with temperature. The temperature dependence of the photoresponse of quasi-intrinsic silicon samples is in good agreement with the optical absorption data of Macfarlane et al. More heavily doped silicon devices show a photoresponse extending to a lower temperature and having a smaller temperature dependence than intrinsic silicon. This is explained in terms of bandgap narrowing. Comparison with theoretical curves enables the resolution of bandgap reductions at the meV level.

  13. Numerical modeling of mode-locked fiber lasers with a fiber-based saturable-absorber

    Science.gov (United States)

    Wang, Long; Chong, Andy; Haus, Joseph W.

    2017-01-01

    We report fiber laser simulations with a fiber compatible, self-focusing, saturable absorber (SA) device. The SA device consists of two tapered fiber ends separated by a bulk, nonlinear medium. An optical beam transmitted from one tapered fiber end, propagate through the nonlinear medium (chalcogenide glass As40 S e60) and couples back into the other tapered fiber end. Pulse propagation in the fiber laser cavity is performed using the Split Step Method. Stable pulses are generated with energies around 0.3 nJ and a transform limited pulse width around 200 fs.

  14. Electrooptical devices

    Science.gov (United States)

    Hurwitz, C. E.

    1980-03-01

    This report covers work carried out with support of the Department of the Air Force during the period 1 October 1979 through 31 March 1980. A part of this support was provided by the Rome Air Development Center. CW operation at temperatures up to 55 C has been achieved for GaInAsP/InP double-heterostructure (DH) lasers emitting at 1.5 micrometers, which were grown without a GaInAsP buffer layer. These devices are of interest for use as sources in fiber-optics communications systems, since the lowest transmission loss reported for fused-silica optical fibers occurs at 1.55 micrometers. Surface passivation techniques developed for InP and GaInAsP avalanche photodiodes have resulted in reductions of dark current as large as four orders of magnitude, to values as low as .0000016 A/sq cm at 0.9 V(b) where V(b) is the breakdown voltage. Devices consisting entirely of InP have been passivated with plasma-deposited Si3N4, and those with a GaInAsP layer but with the p-n junction in InP have been passivated with polyimide. Neither of these techniques successfully reduces dark currents in devices with the p-n junction in the GaInAsP, but a film of photoresist sprayed with SF6 as the propellant has given excellent results. The electrical characteristics in InP ion implanted with Sn, Ge, Si, and C have been investigated. All of these column IV elements yielded n-type conductivity and Sn, Ge, and Si showed high electrical activation; however, implanted C was found to have a net electrical activation of only about 5 percent.

  15. A simple model for approximate bandgap structure calculation of all-solid photonic bandgap fibre based on an array of rings

    Institute of Scientific and Technical Information of China (English)

    Fang Hong; Lou Shu-Qin; Guo Tie-Ying; Yao Lei; Li nong-Lei; Jian ShuiSheng

    2008-01-01

    A simple model for approximate bandgap structure caculation of all-solid photonic bandgap fibre based on an array of rings is proposed.In this model calculated are only the potential modes of a unit cell,which is a high-index ring in the low-index background for this fibre,rather than the whole cladding periodic structure based on Bloch's theorem to find the bandgap.Its accuracy is proved by comparing its results with the results obtained by using the accurate full-vector plane-wave method.High speed in computation is its great advantage over the other exact methods,because it only needs to find the roots of one-dimensional analytical expressions.And the results of this model,mode plots,offer an ideal environment to explore the basic properties of photonic bandgap clearly.

  16. Investigating Bandgap Energies, Materials, and Design of Light-Emitting Diodes

    Science.gov (United States)

    Wagner, Eugene P., II

    2016-01-01

    A student laboratory experiment to investigate the intrinsic and extrinsic bandgaps, dopant materials, and diode design in light-emitting diodes (LEDs) is presented. The LED intrinsic bandgap is determined by passing a small constant current through the diode and recording the junction voltage variation with temperature. A second visible…

  17. Semi-transparent polymer solar cells with excellent sub-bandgap transmission for third generation photovoltaics.

    Science.gov (United States)

    Beiley, Zach M; Christoforo, M Greyson; Gratia, Paul; Bowring, Andrea R; Eberspacher, Petra; Margulis, George Y; Cabanetos, Clément; Beaujuge, Pierre M; Salleo, Alberto; McGehee, Michael D

    2013-12-23

    Semi-transparent organic photovoltaics are of interest for a variety of photovoltaic applications, including solar windows and hybrid tandem photovoltaics. The figure shows a photograph of our semi-transparent solar cell, which has a power conversion efficiency of 5.0%, with an above bandgap transmission of 34% and a sub-bandgap transmission of 81%.

  18. True photonic band-gap mode-control in VCSEL structures

    DEFF Research Database (Denmark)

    Romstad, F.; Madsen, M.; Birkedal, Dan;

    2003-01-01

    Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....

  19. Fiber biology

    Science.gov (United States)

    Cotton fiber cells arising from seed epidermis is the most important agricultural textile commodity in the world. To produce fully mature fibers, approximately two months of fiber developmental process are required. The timing of four distinctive fiber development stages consisting of initiation, ...

  20. Compressed lead-based perovskites reaching optimal Shockley-Queisser bandgap with prolonged carrier lifetime

    CERN Document Server

    Liu, Gang; Gong, Jue; Yang, Wenge; Mao, Ho-kwang; Liu, Zhenxian; Schaller, Richard D; Zhang, Dongzhou; Xu, Tao

    2016-01-01

    Atomic structure of materials plays a decisive role in the light-matter interaction. Yet, despite its unprecedented progress, further efficiency boost of Lead-based organic-inorganic perovskite solar cells is hampered by its greater bandgap than the optimum value according to Shockley-Queisser limit. Here, we report the experimental achievement of bandgap narrowing in formamidinium lead triiodide from 1.489 to 1.337 eV by modulating the lattice constants under hydraulic compression, reaching the optimized bandgap for single-junction solar cells. Strikingly, such bandgap narrowing is accomplished with improved, instead of sacrificed carrier lifetime. More attractively, the narrowed bandgap is partially retainable after the release of pressure. This work opens a new dimension in basic science understanding of structural photonics and paves an alternative pathway towards more efficient photovoltaic materials.

  1. Bandgap Engineering of Double Perovskites for One- and Two-photon Water Splitting

    DEFF Research Database (Denmark)

    Castelli, Ivano Eligio; Thygesen, Kristian Sommer; Jacobsen, Karsten Wedel

    2013-01-01

    Computational screening is becoming increasingly useful in the search for new materials. We are interested in the design of new semiconductors to be used for light harvesting in a photoelectrochemical cell. In the present paper, we study the double perovskite structures obtained by combining 46...... stable cubic perovskites which was found to have a finite bandgap in a previous screening-study. The four-metal double perovskite space is too large to be investigated completely. For this reason we propose a method for combining different metals to obtain a desired bandgap. We derive some bandgap design...... rules on how to combine two cubic perovskites to generate a new combination with a larger or smaller bandgap compared with the constituent structures. Those rules are based on the type of orbitals involved in the conduction bands and on the size of the two cubic bandgaps. We also see that a change...

  2. On topology optimization of acoustic metamaterial lattices for locally resonant bandgaps of flexural waves

    CERN Document Server

    Hedayatrasa, Saeid; Uddin, Mohammad

    2016-01-01

    Optimized topology of bi-material acoustic metamaterial lattice plates is studied for maximized locally resonant bandgap of flexural guided waves. Optimized layout of the two relatively stiff and compliant material phases in the design domain is explored, free from any restrictions on the topology and shape of the relevant domains. Multiobjective optimization is performed through which maximized effective stiffness or minimized overall mass of the bandgap topology is additionally ensured. Extreme and selected intermediate optimized topologies of Pareto fronts are presented and their bandgap efficiencies and effective stiffness are compared. The bi-material constitution of selected topologies are further altered and modal band structure of resultant multilateral and porous designs are evaluated. Novel, core-shell like, locally resonant bandgaps are introduced. It is shown that how the bandgap efficiency and structural mass and/or stiffness can be optimized through optimized microstructural design of the matrix...

  3. 一种光纤隔离式直流信号传输装置的设计%A design of high voltage DC signal fiber isolation-transmission device

    Institute of Scientific and Technical Information of China (English)

    苑舜; 刘红江; 蔡志远

    2015-01-01

    In high-voltage fields, high-voltage side inspection equipment (such as CT, PT) or the output signal of the sensor needs to be transmitted to the low-voltage side, the fiber isolation-transmission device not only can complete the transmission of the signal and achieve electrical isolation, but also has a strong ability to re-sist electromagnetic interference. A set of fiber isolation- transmission device for high-voltage DC measure-ment signal is designed by using the voltage frequency conversion (VFC) chip LM331 and photoelectric con-verter HFBR14XX. The circuit also is given. The V-F converter circuit is simulated, and the analysis shows that its error is 0.01 V.%在高电压领域中,高压侧检测设备(如PT,CT)或传感器的输出信号需要传输到低压侧,光纤隔离式信号传输装置不仅能完成信号的传输,还能实现高低压的电气隔离,同时也具有很强的抗电磁干扰能力。利用电压-频率(V-F)转换芯片LM331和HFBR14XX系列光电器件设计出一套适合高电压直流测量信号的光纤隔离传输装置,并给出了具体的电路原理图。对其中的V-F转换电路进行了仿真,分析表明,其误差为0.01 V。

  4. High Thermoelectric Power Factor of a Diketopyrrolopyrrole-Based Low Bandgap Polymer via Finely Tuned Doping Engineering

    Science.gov (United States)

    Jung, In Hwan; Hong, Cheon Taek; Lee, Un-Hak; Kang, Young Hun; Jang, Kwang-Suk; Cho, Song Yun

    2017-01-01

    We studied the thermoelectric properties of a diketopyrrolopyrrole-based semiconductor (PDPP3T) via a precisely tuned doping process using Iron (III) chloride. In particular, the doping states of PDPP3T film were linearly controlled depending on the dopant concentration. The outstanding Seebeck coefficient of PDPP3T assisted the excellent power factors (PFs) over 200 μW m−1K−2 at the broad range of doping concentration (3–8 mM) and the maximum PF reached up to 276 μW m−1K−2, which is much higher than that of poly(3-hexylthiophene), 56 μW m−1K−2. The high-mobility of PDPP3T was beneficial to enhance the electrical conductivity and the low level of total dopant volume was important to maintain high Seebeck coefficients. In addition, the low bandgap PDPP3T polymer effiectively shifted its absorption into near infra-red area and became more colorless after doping, which is great advantage to realize transparent electronic devices. Our results give importance guidance to develop thermoelectric semiconducting polymers and we suggest that the use of low bandgap and high-mobility polymers, and the accurate control of the doping levels are key factors for obtaining the high thermoelectric PF. PMID:28317929

  5. Magnetism switching and band-gap narrowing in Ni-doped PbTiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Wenliang; Yu, Lu; Yang, Pingxiong, E-mail: pxyang@ee.ecnu.edu.cn; Chu, Junhao [Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China); Deng, Hongmei [Instrumental Analysis and Research Center, Institute of Materials, Shanghai University, 99 Shangda Road, Shanghai 200444 (China)

    2015-05-21

    Ions doping-driven structural phase transition accompanied by magnetism switching and band-gap narrowing effects has been observed in PbTi{sub 1−x}Ni{sub x}O{sub 3−δ} (xPTNO, x = 0.00, 0.06, and 0.33) thin films. With the increase of x, the xPTNO thin films exhibit not only a phase transition from the pseudotetragonal structure to a centrosymmetric cubic structure but also a drastic decrease of grain size. Moreover, the as-grown Ni-doped PbTiO{sub 3} (PTO) thin films show obvious room-temperature ferromagnetism and an increased saturation magnetization with increasing the Ni content, in contrast to undoped PTO, which shows diamagnetism. A bound magnetic polaron model was proposed to understand the observed ferromagnetic behavior of PTO-derived perovskite thin films. Furthermore, the 0.33PTNO thin film presents a narrowed band-gap, much smaller than that of PTO, which is attributed to new states of both the highest occupied molecular orbital and the lowest unoccupied molecular orbital in an electronic structure with the presence of Ni. These findings may open up a route to explore promising perovskite oxides as candidate materials for use in multiferroics and solar-energy devices.

  6. High Thermoelectric Power Factor of a Diketopyrrolopyrrole-Based Low Bandgap Polymer via Finely Tuned Doping Engineering

    Science.gov (United States)

    Jung, In Hwan; Hong, Cheon Taek; Lee, Un-Hak; Kang, Young Hun; Jang, Kwang-Suk; Cho, Song Yun

    2017-03-01

    We studied the thermoelectric properties of a diketopyrrolopyrrole-based semiconductor (PDPP3T) via a precisely tuned doping process using Iron (III) chloride. In particular, the doping states of PDPP3T film were linearly controlled depending on the dopant concentration. The outstanding Seebeck coefficient of PDPP3T assisted the excellent power factors (PFs) over 200 μW m‑1K‑2 at the broad range of doping concentration (3–8 mM) and the maximum PF reached up to 276 μW m‑1K‑2, which is much higher than that of poly(3-hexylthiophene), 56 μW m‑1K‑2. The high-mobility of PDPP3T was beneficial to enhance the electrical conductivity and the low level of total dopant volume was important to maintain high Seebeck coefficients. In addition, the low bandgap PDPP3T polymer effiectively shifted its absorption into near infra-red area and became more colorless after doping, which is great advantage to realize transparent electronic devices. Our results give importance guidance to develop thermoelectric semiconducting polymers and we suggest that the use of low bandgap and high-mobility polymers, and the accurate control of the doping levels are key factors for obtaining the high thermoelectric PF.

  7. Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications

    Science.gov (United States)

    Wellmann, Peter; Syväjärvi, Mikael; Ou, Haiyan

    2014-03-01

    silicon oxycarbide material can provide potential applications of the Eu luminescent materials to challenging conditions like high temperatures or aggressive environments where the silica has weaknesses. In some approaches, silicon rich silicon oxide that contain silicon nanoclusters emit red to near infrared luminescence due to quantum confinement effects while luminescence at shorter wavelength is difficult due to the interplay of defects and quantum confinement effects. In addition it is applicable as low-k dielectric, etch-stop and passivation layers. It also has an optical band-gap that is smaller than that of SiO2 which may facilitate carrier injection at lower voltages that is suitable for optoelectronics. From materials perspective of emerging materials, it seems distant to consider system related issues. The future demands on communication and lighting devices require higher information flows in modernized optical devices, for example by replacing electrical interconnects with their optical counterparts and tunable backgrounds filters for integrated optics or photonics applications. However, there are materials issues related to such device performance, for example by a non-linearity, that provide the possibility for selective removal or addition of wavelengths using hetero structures in which one side of the structure enhances the light-to-dark sensitivity of long and medium wavelength channels and diminish others, and an opposite behavior in other face of the structure. Certainly materials may be applied in various innovative ways to provide new performances in devices and systems. In any materials and device evaluation, reliability issues in passivation and packaging of semiconductor device structures provide a base knowledge that may be used to evaluate new concepts. Fundamental aspects of dielectric constant, bandgap and band offsets between the valence and conduction band edges between the passivation layer and the semiconductor create a foundation for

  8. MUTUAL COUPLING REDUCTION BETWEEN MICROSTRIP ANTENNAS USING ELECTROMAGNETIC BANDGAP STRUCTURE

    Directory of Open Access Journals (Sweden)

    G.N. Gaikwad

    2011-03-01

    Full Text Available When the number of antenna elements is placed in forming the arrays, mutual coupling between the antenna elements is a critical issue. This is particularly concern in phase array antennas. Mutual coupling is a potential source of performance degradation in the form of deviation of the radiation pattern from the desired one, gain reduction due to excitation of surface wave, increased side lobe levels etc. EBG (Electromagnetic Band Gap structure (also called as Photonic Bandgap Structure PBG not only enhances the performance of the patch antennas but also provides greater amount of isolation when placed between the microstrip arrays. This greatly reduces the mutual coupling between the antenna elements. The radiation efficiency, gain, antenna efficiency, VSWR, frequency, directivity etc greatly improves over the conventional patch antennas using EBG. The EBG structure and normal patch antenna is simulated using IE3D antenna simulation software.

  9. One-dimensional photonic bandgap structure in abalone shell

    Institute of Scientific and Technical Information of China (English)

    LI Bo; ZHOU Ji; LI Longtu; LI Qi; HAN Shuo; HAO Zhibiao

    2005-01-01

    @@ Photonic bandgap (PBG) materials are periodic com- posites of dielectric materials in which electromagnetic waves of certain frequency range cannot propagate in any or a special direction. Recently, there has been great inter- est in synthetic PBG materials due to their ability in ma- nipulation of photons. Since 500 million years ago, the natural world has been exploiting photonic structures for specific biological purposes[1]. Different types of biologi- cal PBG materials have been discovered in recent years, such as the one-dimension PBG structure in the sea mouse Aphrodita[2], and the fruits Elaeocarpus[3,4]; two-dimension PBG structure in the male peacock Pavo muticus feathers[5], Indonesian male Papilio palinurus butterfly[6], Thaumantis diores butterfly[7] and the male Ancyluris meliboeus Fabricius butterflies[8]; and three-dimension PBG structure in the weevil Pachyrhynchus argus[9].

  10. Cavity quantum electrodynamics with three-dimensional photonic bandgap crystals

    CERN Document Server

    Vos, W L

    2015-01-01

    This paper gives an overview of recent work on three-dimensional (3D) photonic crystals with a "full and complete" 3D photonic band gap. We review five main aspects: 1) spontaneous emission inhibition, 2) spatial localization of light within a tiny nanoscale volume (aka "a nanobox for light"), 3) the introduction of a gain medium leading to thresholdless lasers, 4) breaking of the weak-coupling approximation of cavity QED, both in the frequency and in the time-domain, 5) decoherence, in particular the shielding of vacuum fluctuations by a 3D photonic bandgap. In addition, we list and evaluate all known photonic crystal structures with a demonstrated 3D band gap.

  11. A Novel 2D Z-Shaped Electromagnetic Bandgap Structure

    Directory of Open Access Journals (Sweden)

    I. Iliev

    2015-02-01

    Full Text Available This paper researches a novel 2D Z-shaped Electromagnetic Band-Gap (EBG structure, its dispersion diagram and application field. Based on a transmission line model, the dispersion equation is derived and theoretically investigated. In order to validate theoretical results, a full wave analysis is performed and the electromagnetic properties of the structure are revealed. The theoretical results show good agreement with the full wave simulation results. The frequency response of the structure is compared to the well know structures of Jerusalem cross and patch EBG. The results show the applicability of the proposed 2D Z-shaped EBG in microstrip patch antennas, microstrip filters and high speed switching circuits, where the suppression of parasitic surface wave is required.

  12. Novel Photonic Bandgap Structure and Its Application in Amplifier

    Institute of Scientific and Technical Information of China (English)

    PANGYunbo; GAOBaoxin

    2003-01-01

    A novel compact photonic bandgap (PBG)structural element, which is etched in the ground plane of the microstrip line, is proposed in this paper. A forbid-den gap, which is about 200MHz wide, is measured at the center frequency of 8.6GHz. The measured results agree with finite difference time domain (FDTD) simulations. A harmonic-suppression amplifier is fabricated by utilizing this novel structural element. The suppression of the sec-ond order harmonic has been enhanced about 17dB when compared with a reference amplifier. Since no filters are needed and the structural element is etched in the ground plane, the whole circuit is compact.

  13. Low voltage bandgap reference with closed loop curvature compensation

    Science.gov (United States)

    Tao, Fan; Bo, Du; Zheng, Zhang; Guoshun, Yuan

    2009-03-01

    A new low-voltage CMOS bandgap reference (BGR) that achieves high temperature stability is proposed. It feeds back the output voltage to the curvature compensation circuit that constitutes a closed loop circuit to cancel the logarithmic term of voltage VBE. Meanwhile a low voltage amplifier with the 0.5 μm low threshold technology is designed for the BGR. A high temperature stability BGR circuit is fabricated in the CSMC 0.5 μm CMOS technology. The measured result shows that the BGR can operate down to 1 V, while the temperature coefficient and line regulation are only 9 ppm/°C and 1.2 mV/V, respectively.

  14. Low voltage bandgap reference with closed loop curvature compensation

    Institute of Scientific and Technical Information of China (English)

    Fan Tao; Du Bo; Zhang Zheng; Yuan Guoshun

    2009-01-01

    A new low-voltage CMOS bandgap reference (BGR) that achieves high temperature stability is proposed. It feeds back the output voltage to the curvature compensation circuit that constitutes a closed loop circuit to cancel the logarithmic term of voltage VBE. Meanwhile a low voltage amplifier with the 0.5μm low threshold technology is designed for the BGR. A high temperature stability BGR circuit is fabricated in the CSMC 0.5μm CMOS tech-nology. The measured result shows that the BGR can operate down to 1 V, while the temperature coefficient and line regulation are only 9 ppm/℃ and 1.2 mV/V, respectively.

  15. Synthesis and device applications of graphitic nanomaterials

    Science.gov (United States)

    Umair, Ahmad

    This thesis is focused on two topics: (i) synthesis and characterization of bilayer graphene and pyrolytic carbon by atmospheric pressure chemical vapor deposition, and (ii) application of graphene in the fabrication of a buckyball memory device. Monolayer and bilayer graphene are semi-metal with zero bandgap. One can induce a bandgap in bilayer graphene by applying a gate voltage in the stacking direction. Thus, bandgap and Fermi level in bilayer graphene can be controlled simultaneously with a double-gate device, making it a useful material for future semiconducting applications. Controlled synthesis of bilayer graphene would be the first step to fabricate bilayer graphene based devices. In this context, we report a uniform and low-defect synthesis of bilayer graphene on evaporated nickel films. Ultra-fast cooling is employed to control the number of layers and sample uniformity. The process is self-limiting, which leads to bilayer graphene synthesis over a wide range of growth-time and precursor flow-rate. Pryolytic carbon is another important carbon nanomaterial, due to its diverse applications in electronic and biomedicalengineering. We employ chemical vapor deposition with ultra-fast cooling technique to synthesize pyrolytic carbon. Furthermore, we elucidate a method to calculate the in-plane crystal size by using Raman spectroscopy. Finally, the use of bilayer graphene in a write-once read-many memory device has been demonstrated. The device showed irreversible switching from low-resistance to high-resistance state, with hysteresis in the transport characteristics. The control sample showed random switching and hysteresis due to electromigration of metal atoms into the active material of the device. We attribute the reliability and performance of the reported device to the ultra-smooth graphene contacts, which additionally inhibits electromigration from the underlying metallic film. Moreover, the memory device showed excellent endurance and retention

  16. Fiber optic-based biosensor

    Science.gov (United States)

    Ligler, Frances S.

    1991-01-01

    The NRL fiber optic biosensor is a device which measures the formation of a fluorescent complex at the surface of an optical fiber. Antibodies and DNA binding proteins provide the mechanism for recognizing an analyze and immobilizing a fluorescent complex on the fiber surface. The fiber optic biosensor is fast, sensitive, and permits analysis of hazardous materials remote from the instrumentation. The fiber optic biosensor is described in terms of the device configuration, chemistry for protein immobilization, and assay development. A lab version is being used for assay development and performance characterization while a portable device is under development. Antibodies coated on the fiber are stable for up to two years of storage prior to use. The fiber optic biosensor was used to measure concentration of toxins in the parts per billion (ng/ml) range in under a minute. Immunoassays for small molecules and whole bacteria are under development. Assays using DNA probes as the detection element can also be used with the fiber optic sensor, which is currently being developed to detect biological warfare agents, explosives, pathogens, and toxic materials which pollute the environment.

  17. Slow-light enhanced absorption in a hollow-core fiber

    DEFF Research Database (Denmark)

    Grgic, Jure; Xiao, Sanshui; Mørk, Jesper;

    2010-01-01

    Light traversing a hollow-core photonic band-gap fiber may experience multiple reflections and thereby a slow-down and enhanced optical path length. This offers a technologically interesting way of increasing the optical absorption of an otherwise weakly absorbing material which can infiltrate...

  18. Modal dynamics in hollow-core photonic-crystal fibers with elliptical veins.

    Science.gov (United States)

    Hochman, Amit; Leviatan, Yehuda

    2005-08-08

    Modal characteristics of hollow-core photonic-crystal fibers with elliptical veins are studied by use of a recently proposed numerical method. The dynamic behavior of bandgap guided modes, as the wavelength and aspect ratio are varied, is shown to include zero-crossings of the birefringence, polarization dependent radiation losses, and deformation of the fundamental mode.

  19. Developments of DPF systems with mesh laminated structures. Performances of DPF systems which consist of the metal-mesh laminated filter combustion with the alumina-fiber mesh, and the combustion device of trapped diesel particles; Mesh taso kozo no DPF no kaihatsu. Kinzokusen to arumina sen`i mesh ni yoru fukugo filter to filter heiyo heater ni yoru DPF no seino

    Energy Technology Data Exchange (ETDEWEB)

    Kojima, T.; Tange, A.; Matsuda, K. [NHK Spring Co. Ltd., Yokohama (Japan)

    1997-10-01

    For the purpose of continuous run without any maintenance, new DPF (diesel particulate filter)systems laminated by both metal-wire mesh and alumina-fiber mesh alternately, are under the developments. The perfect combustion of trapped diesel particulate can be achieved by a couple of the resistance heating devices inserted into the filter. 5 refs., 7 figs., 3 tabs.

  20. Highly efficient luminescent solar concentrators based on earth-abundant indirect-bandgap silicon quantum dots

    Science.gov (United States)

    Meinardi, Francesco; Ehrenberg, Samantha; Dhamo, Lorena; Carulli, Francesco; Mauri, Michele; Bruni, Francesco; Simonutti, Roberto; Kortshagen, Uwe; Brovelli, Sergio

    2017-02-01

    Building-integrated photovoltaics is gaining consensus as a renewable energy technology for producing electricity at the point of use. Luminescent solar concentrators (LSCs) could extend architectural integration to the urban environment by realizing electrode-less photovoltaic windows. Crucial for large-area LSCs is the suppression of reabsorption losses, which requires emitters with negligible overlap between their absorption and emission spectra. Here, we demonstrate the use of indirect-bandgap semiconductor nanostructures such as highly emissive silicon quantum dots. Silicon is non-toxic, low-cost and ultra-earth-abundant, which avoids the limitations to the industrial scaling of quantum dots composed of low-abundance elements. Suppressed reabsorption and scattering losses lead to nearly ideal LSCs with an optical efficiency of η = 2.85%, matching state-of-the-art semi-transparent LSCs. Monte Carlo simulations indicate that optimized silicon quantum dot LSCs have a clear path to η > 5% for 1 m2 devices. We are finally able to realize flexible LSCs with performances comparable to those of flat concentrators, which opens the way to a new design freedom for building-integrated photovoltaics elements.

  1. A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells.

    Science.gov (United States)

    Guo, Fei; Li, Ning; Fecher, Frank W; Gasparini, Nicola; Ramirez Quiroz, Cesar Omar; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V; Radmilović, Velimir R; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

    2015-07-16

    The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

  2. Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals

    KAUST Repository

    Abdelhady, Ahmed L.

    2016-01-02

    Controllable doping of semiconductors is a fundamental technological requirement for electronic and optoelectronic devices. As intrinsic semiconductors, hybrid perovskites have so far been a phenomenal success in photovoltaics. The inability to dope these materials heterovalently (or aliovalently) has greatly limited their wider utilizations in electronics. Here we show an efficient in situ chemical route that achieves the controlled incorporation of trivalent cations (Bi3+, Au3+, or In3+) by exploiting the retrograde solubility behavior of perovskites. We term the new method dopant incorporation in the retrograde regime. We achieve Bi3+ incorporation that leads to bandgap tuning (∼300 meV), 104 fold enhancement in electrical conductivity, and a change in the sign of majority charge carriers from positive to negative. This work demonstrates the successful incorporation of dopants into perovskite crystals while preserving the host lattice structure, opening new avenues to tailor the electronic and optoelectronic properties of this rapidly emerging class of solution-processed semiconductors. © 2016 American Chemical Society.

  3. A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells

    Science.gov (United States)

    Guo, Fei; Li, Ning; Fecher, Frank W.; Gasparini, Nicola; Quiroz, Cesar Omar Ramirez; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V.; Radmilović, Velimir R.; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J.

    2015-01-01

    The multi-junction concept is the most relevant approach to overcome the Shockley–Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies. PMID:26177808

  4. Bandgap engineering of different stacking WS2 bilayer under an external electric field

    Science.gov (United States)

    Li, Wei; Wang, Tianxing; Dai, Xianqi; Wang, Xiaolong; Zhai, Caiyun; Ma, Yaqiang; Chang, Shanshan

    2016-01-01

    Effective modulation of physical properties via external control is a tantalizing possibility that would bring two-dimensional material-based electronics a step closer. By means of density functional theory calculations, we systematically examined the effect of external electric field on the bandgap of different stacking WS2 bilayer. It shows that for all cases, the most stable stacking order is the AB conformation, followed by the AA‧ stacking fault, which is by only 2.06 meV/supercell less stable than AB. The band gaps of both AB and AA‧ configurations decrease monotonically with an increasing vertical external electric field strength except for external electric field along -z direction in the AB conformation. Applying external electric field along +z direction and -z directions has different effects on the band gap of AB conformation, while it has the same effect on the AA‧ configuration. The different effects are caused by the spontaneous electrical polarization existing between the two monolayers of AB conformation. This may provide a new perspective on the formation of WS2-based electronic and optoelectronic devices.

  5. Metallic-like bonding in plasma-born silicon nanocrystals for nanoscale bandgap engineering.

    Science.gov (United States)

    Vach, Holger; Ivanova, Lena V; Timerghazin, Qadir K; Jardali, Fatme; Le, Ha-Linh Thi

    2016-10-27

    Based on ab initio molecular dynamics simulations, we show that small nanoclusters of about 1 nm size spontaneously generated in a low-temperature silane plasma do not possess tetrahedral structures, but are ultrastable. Apparently small differences in the cluster structure result in substantial modifications in their electric, magnetic, and optical properties, without the need for any dopants. Their non-tetrahedral geometries notably lead to electron deficient bonds that introduce efficient electron delocalization that strongly resembles the one of a homogeneous electron gas leading to metallic-like bonding within a semiconductor nanocrystal. As a result, pure hydrogenated silicon clusters that form by self-assembly in a plasma reactor possess optical gaps covering most of the solar spectrum from 1.0 eV to 5.2 eV depending simply on their structure and, in turn, on their degree of electron delocalization. This feature makes them ideal candidates for future bandgap engineering not only for photovoltaics, but also for many nano-electronic devices employing nothing else but silicon and hydrogen atoms.

  6. Characterization of bandgap reference circuits designed for high energy physics applications

    Science.gov (United States)

    Traversi, G.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Mattiazzo, S.; Ratti, L.; Re, V.; Riceputi, E.

    2016-07-01

    The objective of this work is to design a high performance bandgap voltage reference circuit in a standard commercial 65 nm CMOS technology capable of operating in harsh radiation environments. A prototype circuit based on three different devices (diode, bipolar transistor and MOSFET) was fabricated and tested. Measurement results show a temperature variation as low as ±3.4 mV over a temperature range of 170 ° C (-30 °C to 140 °C) and a line regulation at room temperature of 5.2%/V. Measured VREF is 690 mV±15 mV (3σ) for 26 samples on the same wafer. Circuits correctly operate with supply voltages in the range from 1.32 V down to 0.78 V. A reference voltage shift of only 7.6 mV (around 1.1%) was measured after irradiation with 10 keV X-rays up to an integrated dose of 225 Mrad (SiO2).

  7. Cladding defects in hollow core fibers for surface mode suppression and improved birefringence.

    Science.gov (United States)

    Michieletto, M; Lyngsø, J K; Lægsgaard, J; Bang, O

    2014-09-22

    We demonstrate a novel polarization maintaining hollow-core photonic bandgap fiber geometry that reduces the impact of surface modes on fiber transmission. The cladding structure is modified with a row of partially collapsed holes to strip away unwanted surface modes. A theoretical investigation of the surface mode stripping is presented and compared to the measured performance of four 7-cells core fibers that were drawn with different collapse ratio of the defects. The varying pressure along the defect row in the cladding during drawing introduces an ellipticity of the core. This, combined with the presence of antiresonant features on the core wall, makes the fibers birefringent, with excellent polarization maintaining properties.

  8. Dynamic control of higher-order modes in hollow-core photonic crystal fibers.

    Science.gov (United States)

    Euser, T G; Whyte, G; Scharrer, M; Chen, J S Y; Abdolvand, A; Nold, J; Kaminski, C F; Russell, P St J

    2008-10-27

    We present a versatile method for selective mode coupling into higher-order modes of photonic crystal fibers, using holograms electronically generated by a spatial light modulator. The method enables non-mechanical and completely repeatable changes in the coupling conditions. We have excited higher order modes up to LP(31) in hollow-core photonic crystal fibers. The reproducibility of the coupling allows direct comparison of the losses of different guided modes in both hollow-core bandgap and kagome-lattice photonic crystal fibers. Our results are also relevant to applications in which the intensity distribution of the light inside the fiber is important, such as particle- or atom-guidance.

  9. Microfiber-based few-layer black phosphorus saturable absorber for ultra-fast fiber laser

    CERN Document Server

    Luo, Zhi-Chao; Guo, Zhi-Nan; Jiang, Xiao-Fang; Luo, Ai-Ping; Zhao, Chu-Jun; Yu, Xue-Feng; Xu, Wen-Cheng; Zhang, Han

    2015-01-01

    Few-layer black phosphorus (BP), as the most alluring graphene analogue owing to its similar structure as graphene and thickness dependent direct band-gap, has now triggered a new wave of research on two-dimensional (2D) materials based photonics and optoelectronics. However, a major obstacle of practical applications for few-layer BPs comes from their instabilities of laser-induced optical damage. Herein, we demonstrate that, few-layer BPs, fabricated through the liquid exfoliation approach, can be developed as a new and practical saturable absorber (SA) by depositing few-layer BPs with microfiber. The saturable absorption property of few-layer BPs had been verified through an open-aperture z-scan measurement at the telecommunication band and the microfiber-based BP device had been found to show a saturable average power of ~4.5 mW and a modulation depth of 10.9%, which is further confirmed through a balanced twin detection measurement. By further integrating this optical SA device into an erbium-doped fiber...

  10. Monolithic, High-Speed Fiber-Optic Switching Array for Lidar Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed optical device is a fiber-based multi-channel switch to quickly switch a fiber-coupled laser among many possible output channels to create a fiber-based...

  11. High Efficiency Three-phase Power Factor Correction Rectifier using Wide Band-Gap Devices

    OpenAIRE

    2016-01-01

    Improving the conversion efficiency of power factor correction (PFC) rectifiers has become compelling due to their wide applications such as adjustable speed drives, uninterruptible power supplies (UPS), and battery chargers for electric vehicles (EVs). The attention to PFCs has increased even more since grid regulations have become stricter in terms of injected harmonic and power quality. Therefore, improving the efficiency and the power quality of PFCs are the main objectives of this PhD wo...

  12. High Efficiency Three-phase Power Factor Correction Rectifier using Wide Band-Gap Devices

    DEFF Research Database (Denmark)

    Kouchaki, Alireza

    2016-01-01

    . Therefore, current controllers are also important to be investigated in this project. In this PhD research work, a comprehensive design of a two-level three-phase PFC rectifier using silicon-carbide (SiC) switches to achieve high efficiency is presented. The work is divided into two main parts: 1) Optimum...

  13. Study on the Microwave Transmission Characteristics of a Three-Dimensional Electromagnetic Bandgap Structure with Coupled Defects

    Science.gov (United States)

    Chen, Shibin; Li, Dichen; Tian, Xiaoyong; Han, Haoxue; Wu, Haihua

    2012-03-01

    The influence of a vertical coupled defect on the localized properties of a diamond electromagnetic bandgap (EBG) structure has been studied in the present research. The diamond EBG structure with a cavity defect was fabricated by stereolithography and gel-casting processes with alumina slurry. The resonant peaks of two kinds of defects were compared by measuring their microwave transmission characteristics using a network analyzer. A higher quality factor ( Q) was obtained for the diamond EBG structure with a vertical coupled defect, and the transmission efficiency of resonant peak was improved by 29.6% in comparison with a single defect. Experimental results agreed with the simulation results. These microwave transmission characteristics of the three-dimensional (3D) EBG structures indicate that they can be applied in microwave devices to improve transmission efficiency.

  14. Sub-bandgap linear-absorption-based photodetectors in avalanche mode in PN-diode-integrated silicon microring resonators.

    Science.gov (United States)

    Li, Yu; Feng, Shaoqi; Zhang, Yu; Poon, Andrew W

    2013-12-01

    We report a sub-bandgap linear-absorption-based photodetector in avalanche mode at 1550 nm in a PN-diode-integrated silicon microring resonator. The photocurrent is primarily generated by the defect-state absorption introduced by the boron and phosphorous ion implantation during the PN diode formation. The responsivity is enhanced by both the cavity effect and the avalanche multiplication. We measure a responsivity of ~72.8 mA/W upon 8 V at cavity resonances in avalanche mode, corresponding to a gain of ~72 relative to the responsivity of ~1.0 mA/W upon 3 V at cavity resonances in normal mode. Our device exhibits a 3 dB bandwidth of ~7 GHz and an open eye diagram at 15 Gbit/s upon 8 V.

  15. Synthesis and Characterization of Small Band-gap Conjugated Polymers - Poly(pyrrolyl methines)

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A kind of small band-gap conjugated polymers-poly (pyrrolyl methines) and their precursors-(poly pyrrolyl methanes) have been synthesized by a simple method and characterized by 1HNMR, FT-IR, TGA and UV-Vis. These polymers can be dissolved in high polar solvents such as DMSO, DMF or NMP. The results reveals that the band-gap of the synthesized conjugated polymers are in the range of 0.96~1.14 eV and they all belong to the small band-gap polymers. The conductivity of doped products with iodine is in the range of semiconductor.

  16. Band-gap narrowing in heavily doped silicon at 20 and 300 K studied by photoluminescence

    Science.gov (United States)

    Wagner, Joachim

    1985-07-01

    The band-gap shrinkage in heavily doped n- and p-type silicon is studied by photoluminescence both at low temperatures (20 K) and at room temperature (300 K). A line-shape analysis was performed to determine the indirect band-gap energy from the emission spectra. Within the experimental accuracy the same band-gap shift is observed at room temperature as at low temperature. The present results are compared with experimental data from other optical studies and with theoretical calculations.

  17. Optical fiber telecommunications IIIb

    CERN Document Server

    Koch, Thomas L

    2012-01-01

    Updated to include the latest information on light wave technology, Optical Fiber Telecommunication III, Volumes A & B are invaluable for scientists, students, and engineers in the modern telecommunications industry. This two-volume set includes the most current research available in optical fiber telecommunications, light wave technology, and photonics/optoelectronics. The authors cover important background concepts such as SONET, coding device technology, andWOM components as well as projecting the trends in telecommunications for the 21st century.Key Features* One of the hottest subjects of

  18. Dietary Fiber

    Science.gov (United States)

    Fiber is a substance in plants. Dietary fiber is the kind you eat. It's a type of carbohydrate. You may also see it listed on a food label as soluble ... types have important health benefits. Good sources of dietary fiber include Whole grains Nuts and seeds Fruit and ...

  19. Devices, systems, and methods for harvesting energy and methods for forming such devices

    Science.gov (United States)

    Kotter, Dale K.; Novack, Steven D.

    2012-12-25

    Energy harvesting devices include a substrate coupled with a photovoltaic material and a plurality of resonance elements associated with the substrate. The resonance elements are configured to collect energy in at least visible and infrared light spectra. Each resonance element is capacitively coupled with the photovoltaic material, and may be configured to resonate at a bandgap energy of the photovoltaic material. Systems include a photovoltaic material coupled with a feedpoint of a resonance element. Methods for harvesting energy include exposing a resonance element having a resonant electromagnetic radiation having a frequency between approximately 20 THz and approximately 1,000 THz, absorbing at least a portion of the electromagnetic radiation with the resonance element, and resonating the resonance element at a bandgap energy of an underlying photovoltaic material. Methods for forming an energy harvesting device include forming resonance elements on a substrate and capacitively coupling the resonance elements with a photovoltaic material.

  20. Novel molecular host materials based on carbazole/PO hybrids with wide bandgap via unique linkages for solution-processed blue phosphorescent OLEDs

    Science.gov (United States)

    Ye, Hua; Zhou, Kaifeng; Wu, Hongyu; Chen, Kai; Xie, Gaozhan; Hu, Jingang; Yan, Guobing; Ma, Songhua; Su, Shi-Jian; Cao, Yong

    2016-10-01

    A series of novel molecules with wide bandgap based on electron-withdrawing diphenyl phosphine oxide units and electron-donating carbazolyl moieties through insulated unique linkages of flexible chains terminated by oxygen or sulfur atoms as solution-processable host materials were successfully synthesized for the first time, and their thermal, photophysical, and electrochemical properties were studied thoroughly. These materials possess high triplet energy levels (ET, 2.76-2.77 eV) due to the introduction of alkyl chain to interrupt the conjugation between electron-donor and electron-acceptor. Such high ET could effectively curb the energy from phosphorescent emitter transfer to the host molecules and thus assuring the emission of devices was all from the blue phosphorescent emitter iridium (III) bis [(4,6-difluorophenyl)-pyridinate-N,C2‧]picolinate (FIrpic). Among them, the solution-processed device based on CBCR6OPO without extra vacuum thermal-deposited hole-blocking layer and electron-transporting layer showed the highest maximum current efficiency (CEmax) of 4.16 cd/A. Moreover, the device presented small efficiency roll-off with current efficiency (CE) of 4.05 cd/A at high brightness up to 100 cd/m2. Our work suggests the potential applications of the solution-processable materials with wide bandgap in full-color flat-panel displays and organic lighting.

  1. Nanoscale wicking methods and devices

    Science.gov (United States)

    Zhou, Jijie (Inventor); Bronikowski, Michael (Inventor); Noca, Flavio (Inventor); Sansom, Elijah B. (Inventor)

    2011-01-01

    A fluid transport method and fluid transport device are disclosed. Nanoscale fibers disposed in a patterned configuration allow transport of a fluid in absence of an external power source. The device may include two or more fluid transport components having different fluid transport efficiencies. The components may be separated by additional fluid transport components, to control fluid flow.

  2. Graphene nano-devices and nano-composites for structural, thermal and sensing applications

    Science.gov (United States)

    Yavari, Fazel

    In this dissertation we have developed graphene-based nano-devices for applications in integrated circuits and gas sensors; as well as graphene-based nano-composites for applications in structures and thermal management. First, we have studied the bandgap of graphene for semiconductor applications. Graphene as a zero-bandgap material cannot be used in the semiconductor industry unless an effective method is developed to open the bandgap in this material. We have demonstrated that a bandgap of 0.206 eV can be opened in graphene by adsorption of water vapor molecules on its surface. Water molecules break the molecular symmetries of graphene resulting in a significant bandgap opening. We also illustrate that the lack of bandgap in graphene can be used to our advantage by making sensors that are able to detect low concentrations of gas molecules mixed in air. We have shown that 1-2 layers of graphene synthesized by chemical vapor deposition enables detection of trace amounts of NO 2 and NH3 in air at room temperature and atmospheric pressure. The gas species are detected by monitoring changes in electrical resistance of the graphene film due to gas adsorption. The sensor response time is inversely proportional to the gas concentration. Heating the film expels chemisorbed molecules from the graphene surface enabling reversible operation. The detection limits of ~100 parts-per-billion (ppb) for NO2 and ~500 ppb for NH3 obtained using this device are markedly superior to commercially available NO2 and NH3 detectors. This sensor is fabricated using individual graphene sheets that are exquisitely sensitive to the chemical environment. However, the fabrication and operation of devices that use individual nanostructures for sensing is complex, expensive and suffers from poor reliability due to contamination and large variability from sample-to-sample. To overcome these problems we have developed a gas sensor based on a porous 3D network of graphene sheets called graphene foam

  3. Vibration band-gap properties of three-dimensional Kagome lattices using the spectral element method

    Science.gov (United States)

    Wu, Zhi-Jing; Li, Feng-Ming; Zhang, Chuanzeng

    2015-04-01

    The spectral element method (SEM) is extended to investigate the vibration band-gap properties of three-dimensional (3D) Kagome lattices. The dynamic stiffness matrix of the 3D element which contains bending, tensional and torsional components is derived. The spectral equations of motion of the whole 3D Kagome lattice are then established. Comparing with frequency-domain solutions calculated by the finite element method (FEM), the accuracy and the feasibility of the SEM solutions are verified. It can be shown that the SEM is suitable for analyzing the vibration band-gap properties. Due to the band-gap characteristics, the periodic 3D Kagome lattice has the performance of vibration isolation. The influences of the structural and material parameters on the vibration band-gaps are discussed and a new type of 3D Kagome lattice is designed to obtain the improved vibration isolation capability.

  4. Microresonator and associated method for producing and controlling photonic signals with a photonic bandgap delay apparatus

    Science.gov (United States)

    Fork, Richard Lynn (Inventor); Jones, Darryl Keith (Inventor); Keys, Andrew Scott (Inventor)

    2000-01-01

    By applying a photonic signal to a microresonator that includes a photonic bandgap delay apparatus having a photonic band edge transmission resonance at the frequency of the photonic signal, the microresonator imparts a predetermined delay to the photonic signal. The photonic bandgap delay apparatus also preferably has a photonic band edge transmission resonance bandwidth which is at least as wide as the bandwidth of the photonic signal such that a uniform delay is imparted over the entire bandwidth of the photonic signal. The microresonator also includes a microresonator cavity, typically defined by a pair of switchable mirrors, within which the photonic bandgap delay apparatus is disposed. By requiring the photonic signal to oscillate within the microresonator cavity so as to pass through the photonic bandgap delay apparatus several times, the microresonator can controllably impart an adjustable delay to the photonic signal.

  5. Fringe structures and tunable bandgap width of 2D boron nitride nanosheets

    Directory of Open Access Journals (Sweden)

    Peter Feng

    2014-07-01

    Full Text Available We report studies of the surface fringe structures and tunable bandgap width of atomic-thin boron nitride nanosheets (BNNSs. BNNSs are synthesized by using digitally controlled pulse deposition techniques. The nanoscale morphologies of BNNSs are characterized by using scanning electron microscope (SEM, and transmission electron microscopy (TEM. In general, the BNNSs appear microscopically flat in the case of low temperature synthesis, whereas at high temperature conditions, it yields various curved structures. Experimental data reveal the evolutions of fringe structures. Functionalization of the BNNSs is completed with hydrogen plasma beam source in order to efficiently control bandgap width. The characterizations are based on Raman scattering spectroscopy, X-ray diffraction (XRD, and FTIR transmittance spectra. Red shifts of spectral lines are clearly visible after the functionalization, indicating the bandgap width of the BNNSs has been changed. However, simple treatments with hydrogen gas do not affect the bandgap width of the BNNSs.

  6. MoS2/MX2 heterobilayers: bandgap engineering via tensile strain or external electrical field

    Science.gov (United States)

    Lu, Ning; Guo, Hongyan; Li, Lei; Dai, Jun; Wang, Lu; Mei, Wai-Ning; Wu, Xiaojun; Zeng, Xiao Cheng

    2014-02-01

    We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX2/MoS2 (M = Mo, Cr, W, Fe, V; X = S, Se). For M = Mo, Cr, W; X = S, Se, all heterobilayers show semiconducting characteristics with an indirect bandgap with the exception of the WSe2/MoS2 heterobilayer which retains the direct-bandgap character of the constituent monolayer. For M = Fe, V; X = S, Se, the MX2/MoS2 heterobilayers exhibit metallic characters. Particular attention of this study has been focused on engineering the bandgap of the TMD heterobilayer materials via application of either a tensile strain or an external electric field. We find that with increasing either the biaxial or uniaxial tensile strain, the MX2/MoS2 (M = Mo, Cr, W; X = S, Se) heterobilayers can undergo a semiconductor-to-metal transition. For the WSe2/MoS2 heterobilayer, a direct-to-indirect bandgap transition may occur beyond a critical biaxial or uniaxial strain. For M (=Fe, V) and X (=S, Se), the magnetic moments of both metal and chalcogen atoms are enhanced when the MX2/MoS2 heterobilayers are under a biaxial tensile strain. Moreover, the bandgap of MX2/MoS2 (M = Mo, Cr, W; X = S, Se) heterobilayers can be reduced by the vertical electric field. For two heterobilayers MSe2/MoS2 (M = Mo, Cr), PBE calculations suggest that the indirect-to-direct bandgap transition may occur under an external electric field. The transition is attributed to the enhanced spontaneous polarization. The tunable bandgaps in general and possible indirect-direct bandgap transitions due to tensile strain or external electric field make the TMD heterobilayer materials a viable candidate for optoelectronic applications.We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX2/MoS2 (M = Mo, Cr, W, Fe, V; X = S, Se). For

  7. Wide Band-Gap 3,4-Difluorothiophene-Based Polymer with 7% Solar Cell Efficiency: an Alternative to P3HT

    KAUST Repository

    Wolf, Jannic Sebastian

    2015-05-27

    We report on a wide band-gap polymer donor composed of benzo[1,2-b:4,5-b\\']dithiophene (BDT) and 3,4-difluorothiophene ([2F]T) units (Eopt ~2.1 eV), and show that the fluorinated analog PBDT[2F]T performs significantly better than its non-fluorinated counterpart PBDT[2H]T in BHJ solar cells with PC71BM. While control P3HT- and PBDT[2H]T-based devices yield PCEs of ca. 4% and 3% (Max.) respectively, PBDT[2F]T-based devices reach PCEs of ca. 7%, combining a large Voc of ca. 0.9 V and short-circuit current values (ca. 10.7 mA/cm2) comparable to those of the best P3HT-based control devices.

  8. Negative voltage bandgap reference with multilevel curvature compensation technique

    Science.gov (United States)

    Xi, Liu; Qian, Liu; Xiaoshi, Jin; Yongrui, Zhao; Lee, Jong-Ho

    2016-05-01

    A novel high-order curvature compensation negative voltage bandgap reference (NBGR) based on a novel multilevel compensation technique is introduced. Employing an exponential curvature compensation (ECC) term with many high order terms in itself, in a lower temperature range (TR) and a multilevel curvature compensation (MLCC) term in a higher TR, a flattened and better effect of curvature compensation over the TR of 165 °C (-40 to 125 °C) is realised. The MLCC circuit adds two convex curves by using two sub-threshold operated NMOS. The proposed NBGR implemented in the Central Semiconductor Manufacturing Corporation (CSMC) 0.5 μm BCD technology demonstrates an accurate voltage of -1.183 V with a temperature coefficient (TC) as low as 2.45 ppm/°C over the TR of 165 °C at a -5.0 V power supply; the line regulation is 3 mV/V from a -5 to -2 V supply voltage. The active area of the presented NBGR is 370 × 180 μm2. Project supported by the Fund of Liaoning Province Education Department (No. L2013045).

  9. Semi-transparent polymer solar cells with excellent sub-bandgap transmission for third generation photovoltaics

    KAUST Repository

    Beiley, Zach M.

    2013-10-07

    Semi-transparent organic photovoltaics are of interest for a variety of photovoltaic applications, including solar windows and hybrid tandem photovoltaics. The figure shows a photograph of our semi-transparent solar cell, which has a power conversion efficiency of 5.0%, with an above bandgap transmission of 34% and a sub-bandgap transmission of 81%. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Elucidating interactions and conductivity of newly synthesised low bandgap polymer with protic and aprotic ionic liquids.

    Directory of Open Access Journals (Sweden)

    Pankaj Attri

    Full Text Available In this paper, we have examined the conductivity and interaction studies of ammonium and imidazolium based ionic liquids (ILs with the newly synthesised low bandgap polymer (Poly(2-heptadecyl-4-vinylthieno[3,4-d]thiazole (PHVTT. Use of low bandgap polymers is the most suitable way to harvest a broader spectrum of solar radiations for solar cells. But, still there is lack of most efficient low bandgap polymer. In order to solve this problem, we have synthesised a new low bandgap polymer and investigated its interaction with the ILs to enhance its conductivity. ILs may undergo almost unlimited structural variations; these structural variations have attracted extensive attention in polymer studies. The aim of present work is to illustrate the state of art progress of implementing the interaction of ILs (protic and aprotic ILs with newly synthesised low bandgap polymer. In addition to this, our UV-Vis spectroscopy, confocal Raman spectroscopy and FT-IR spectroscopy results have revealed that all studied ILs (tributylmethylammonium methyl sulfate ([N1444][MeSO4] from ammonium family and 1-methylimidazolium chloride ([Mim]Cl, and 1-butyl-3-methylimidazolium chloride ([Bmim]Cl from imidazolium family have potential to interact with polymer. Our semi empirical calculation with help of Hyperchem 7 shows that protic IL ([Mim]Cl interacts strongly with the low bandgap polymer through the H-bonding. Further, protic ILs shows enhanced conductivity than aprotic ILs in association with low bandgap polymer. This study provides the combined effect of low bandgap polymer and ILs that may generate many theoretical and experimental opportunities.

  11. Band-gap narrowing in heavily doped silicon: A comparison of optical and electrical data

    Science.gov (United States)

    Wagner, Joachim; del Alamo, Jesús A.

    1988-01-01

    The band-gap narrowing in heavily doped silicon has been studied by optical techniques—namely, photoluminescence and photoluminescence excitation spectroscopy—and by electrical measurements on bipolar transistors. The optical experiments give a consistent set of data for the band-gap narrowing in n- and p-type material at low temperatures as well as at room temperature. A good agreement is found between the optical and electrical data removing the discrepancies existing so far in the literature.

  12. Properties of photonic bandgap in one-dimensional multicomponent photonic crystal

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yi; WANG Qi

    2006-01-01

    Properties of photonic band gap and light propagation in one-dimensional multicomponent photonic crystal have been studied with the optical transfer matrix method.We mainly analyze the relation of photonic band-gap property with the arrangement of components,the refractive index and the geometrical thickness.In this study,the methods to change the width and the location of the existing photonic band-gaps in multicomponent photonic crystal are proposed.

  13. Variable band-gap semiconductors as the basis of new solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Acevedo, Arturo [Centro de Investigacion y de Estudios Avanzados del IPN, Electrical Engineering Department, Avenida IPN No. 2508, 07360 Mexico, DF (Mexico)

    2009-09-15

    Some basic concepts related to variable band-gap absorbing semiconductors in solar cell structures, such as the associated quasi-electric field, will be discussed. The effects of this quasi-electric field upon the minority carrier drift-diffusion length and the back surface recombination velocity may induce a larger generated carrier collection at the junction with the corresponding increase of the illumination current density. It will also be shown that an additional improvement of the open-circuit voltage is possible when the band-gap is reduced within the space charge region so that the dark saturation current density is reduced there. Our estimation is that in the case of a solar cell where the band-gap is changed about 0.5 eV within the space charge region, an increase of the open-circuit voltage around 115 mV will be observed with respect to the single minimum band-gap absorbing material case. A similar band-gap variation in the bulk of the material will cause an increase of the minority carrier drift-diffusion length by a factor of 10 with respect to the single band-gap material. Therefore, based on these physical concepts, two possible structures with variable band-gap layers are proposed in order to have higher efficiencies than for cells without any band-gap grading. It will be shown that these concepts can be applied to II-VI, III-V chalcopyrite and even amorphous semiconductor solar cells. (author)

  14. Polymer-composite fibers for transmitting high peak power pulses at 1.55 microns.

    Science.gov (United States)

    Ruff, Zachary; Shemuly, Dana; Peng, Xiang; Shapira, Ofer; Wang, Zheng; Fink, Yoel

    2010-07-19

    Hollow-core photonic bandgap fibers (PBG) offer the opportunity to suppress highly the optical absorption and nonlinearities of their constituent materials, which makes them viable candidates for transmitting high-peak power pulses. We report the fabrication and characterization of polymer-composite PBG fibers in a novel materials system, polycarbonate and arsenic sulfide glass. Propagation losses for the 60 microm-core fibers are less than 2dB/m, a 52x improvement over previous 1D-PBG fibers at this wavelength. Through preferential coupling the fiber is capable of operating with over 97% the fiber's power output in the fundamental (HE(11)) mode. The fiber transmitted pulses with peak powers of 11.4 MW before failure.

  15. Modulation of bandgap in bilayer armchair graphene ribbons by tuning vertical and transverse electric fields

    Science.gov (United States)

    Vu, Thanh-Tra; Nguyen, Thi-Kim-Quyen; Huynh, Anh-Huy; Phan, Thi-Kim-Loan; Tran, Van-Truong

    2017-02-01

    We investigate the effects of external electric fields on the electronic properties of bilayer armchair graphene nano-ribbons. Using atomistic simulations with Tight Binding calculations and the Non-equilibrium Green's function formalism, we demonstrate that (i) in semi-metallic structures, vertical fields impact more effectively than transverse fields in terms of opening larger bandgap, showing a contrary phenomenon compared to that demonstrated in previous studies in bilayer zigzag graphene nano-ribbons; (ii) in some semiconducting structures, if transverse fields just show usual effects as in single layer armchair graphene nano-ribbons where the bandgap is suppressed when varying the applied potential, vertical fields exhibit an anomalous phenomenon that the bandgap can be enlarged, i.e., for a structure of width of 16 dimer lines, the bandgap increases from 0.255 eV to the maximum value of 0.40 eV when a vertical bias equates 0.96 V applied. Although the combined effect of two fields does not enlarge the bandgap as found in bilayer zigzag graphene nano-ribbons, it shows that the mutual effect can be useful to reduce faster the bandgap in semiconducting bilayer armchair graphene nano-ribbons. These results are important to fully understand the effects of electric fields on bilayer graphene nano-ribbons (AB stacking) and also suggest appropriate uses of electric gates with different edge orientations.

  16. Bandgaps and directional properties of two-dimensional square beam-like zigzag lattices

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yan-Feng; Wang, Yue-Sheng, E-mail: yswang@bjtu.edu.cn [Institute of Engineering Mechanics, Beijing Jiaotong University, Beijing 100044 (China); Zhang, Chuanzeng [Department of Civil Engineering, University of Siegen, Siegen 57068 (Germany)

    2014-12-15

    In this paper we propose four kinds of two-dimensional square beam-like zigzag lattice structures and study their bandgaps and directional propagation of elastic waves. The band structures are calculated by using the finite element method. Both the in-plane and out-of-plane waves are investigated simultaneously via the three-dimensional Euler beam elements. The mechanism of the bandgap generation is analyzed by studying the vibration modes at the bandgap edges. The effects of the geometry parameters of the xy- and z-zigzag lattices on the bandgaps are investigated and discussed. Multiple complete bandgaps are found owing to the separation of the degeneracy by introducing bending arms. The bandgaps are sensitive to the geometry parameters of the periodic systems. The deformed displacement fields of the harmonic responses of a finite lattice structure subjected to harmonic loads at different positions are illustrated to show the directional wave propagation. An extension of the proposed concept to the hexagonal lattices is also presented. The research work in this paper is relevant to the practical design of cellular structures with enhanced vibro-acoustics performance.

  17. Degenerate four wave mixing in large mode area hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Lægsgaard, Jesper

    2013-01-01

    Spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers, in which photonic bandgap guidance and index guidance is combined. Calculations show the parametric gain is maximum on the edge of a photonic bandgap, for a large range of pump...... wavelengths. The FWM products are observed on the edges of a transmission band experimentally, in good agreement with the numerical results. Thereby the bandedges can be used to control the spectral positions of FWM products through a proper fiber design. The parametric gain control combined with a large mode...... area fiber design potentially allows for power scaling of light at wavelengths not easily accessible with e.g. rare earth ions....

  18. Degenerate four wave mixing in large mode area hybrid photonic crystal fibers.

    Science.gov (United States)

    Petersen, Sidsel R; Alkeskjold, Thomas T; Lægsgaard, Jesper

    2013-07-29

    Spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers, in which photonic bandgap guidance and index guidance is combined. Calculations show the parametric gain is maximum on the edge of a photonic bandgap, for a large range of pump wavelengths. The FWM products are observed on the edges of a transmission band experimentally, in good agreement with the numerical results. Thereby the bandedges can be used to control the spectral positions of FWM products through a proper fiber design. The parametric gain control combined with a large mode area fiber design potentially allows for power scaling of light at wavelengths not easily accessible with e.g. rare earth ions.

  19. Optical fiber communications

    CERN Document Server

    Keiser, Gerd

    2008-01-01

    The fourth edition of this popular text and reference book presents the fundamental principles for understanding and applying optical fiber technology to sophisticated modern telecommunication systems. Optical-fiber-based telecommunication networks have become a major information-transmission-system, with high capacity links encircling the globe in both terrestrial and undersea installations. Numerous passive and active optical devices within these links perform complex transmission and networking functions in the optical domain, such as signal amplification, restoration, routing, and switching. Along with the need to understand the functions of these devices comes the necessity to measure both component and network performance, and to model and stimulate the complex behavior of reliable high-capacity networks.

  20. Pressure-induced phase transition and bandgap collapse in the wide-bandgap semiconductor InTaO4

    CERN Document Server

    Errandonea, D; Garg, A B; Botella, P; Martinez-Garcia, D; Pellicer-Porres, J; Rodriguez-Hernandez, P; Munoz, A; Cuenca-Gotor, V; Sans, J A

    2016-01-01

    A pressure-induced phase transition, associated with an increase of the coordination number of In and Ta, is detected beyond 13 GPa in InTaO4 by combining synchrotron x-ray diffraction and Raman measurements in a diamond anvil cell with ab-initio calculations. High-pressure optical-absorption measurements were also carried out. The high-pressure phase has a monoclinic structure which shares the same space group with the low-pressure phase (P2/c). The structure of the high-pressure phase can be considered as a slight distortion of an orthorhombic structure described by space group Pcna. The phase transition occurs together with a unit-cell volume collapse and an electronic bandgap collapse observed by experiments and calculations. Additionally, a band crossing is found to occur in the low-pressure phase near 7 GPa. The pressure dependence of all the Raman-active modes is reported for both phases as well as the pressure dependence of unit-cell parameters and the equations of state. Calculations also provide inf...

  1. Fiber-Optic Temperature Sensor

    Science.gov (United States)

    Maram, Jonathan M.

    1987-01-01

    Proposed sensor measures temperatures over wide range, from cryogenic liquids to burning gases. Made in part of optical fibers, sensor lighter in weight than thermocouple and immune to electromagnetic interference. Device does not respond to temperatures elsewhere than at sensing tip. Thermal expansion and contraction of distance between fiber end and mirror alters interference between light reflected from those two surfaces, thereby giving interferometric indication of temperatures.

  2. Quantum-engineered interband cascade photovoltaic devices

    Science.gov (United States)

    Yang, Rui Q.; Lotfi, Hossein; Li, Lu; Hinkey, Robert T.; Ye, Hao; Klem, John F.; Lei, L.; Mishima, T. D.; Keay, J. C.; Santos, M. B.; Johnson, M. B.

    2013-12-01

    Quantum-engineered multiple stage photovoltaic (PV) devices are explored based on InAs/GaSb/AlSb interband cascade (IC) structures. These ICPV devices employ multiple discrete absorbers that are connected in series by widebandgap unipolar barriers using type-II heterostructure interfaces for facilitating carrier transport between cascade stages similar to IC lasers. The discrete architecture is beneficial for improving the collection efficiency and for spectral splitting by utilizing absorbers with different bandgaps. As such, the photo-voltages from each individual cascade stage in an ICPV device add together, creating a high overall open-circuit voltage, similar to conventional multi-junction tandem solar cells. Furthermore, photo-generated carriers can be collected with nearly 100% efficiency in each stage. This is because the carriers travel over only a single cascade stage, designed to be shorter than a typical diffusion length. The approach is of significant importance for operation at high temperatures where the diffusion length is reduced. Here, we will present our recent progress in the study of ICPV devices, which includes the demonstration of ICPV devices at room temperature and above with narrow bandgaps (e.g. 0.23 eV) and high open-circuit voltages.

  3. Fast, Large-Area, Wide-Bandgap UV Photodetector for Cherenkov Light Detection

    Science.gov (United States)

    Wrbanek, John D.; Wrbanek, Susan Y.

    2013-01-01

    Due to limited resources available for power and space for payloads, miniaturizing and integrating instrumentation is a high priority for addressing the challenges of manned and unmanned deep space missions to high Earth orbit (HEO), near Earth objects (NEOs), Lunar and Martian orbits and surfaces, and outer planetary systems, as well as improvements to high-altitude aircraft safety. New, robust, and compact detectors allow future instrumentation packages more options in satisfying specific mission goals. A solid-state ultraviolet (UV) detector was developed with a theoretical fast response time and large detection area intended for application to Cherenkov detectors. The detector is based on the wide-bandgap semiconductor zinc oxide (ZnO), which in a bridge circuit can detect small, fast pulses of UV light like those required for Cherenkov detectors. The goal is to replace the role of photomultiplier tubes in Cherenkov detectors with these solid-state devices, saving on size, weight, and required power. For improving detection geometry, a spherical detector to measure high atomic number and energy (HZE) ions from any direction has been patented as part of a larger space radiation detector system. The detector will require the development of solid-state UV photodetectors fast enough (2 ns response time or better) to detect the shockwave of Cherenkov light emitted as the ions pass through a quartz, sapphire, or acrylic ball. The detector must be small enough to fit in the detector system structure, but have an active area large enough to capture enough Cherenkov light from the sphere. The detector is fabricated on bulk single-crystal undoped ZnO. Inter - digitated finger electrodes and contact pads are patterned via photolithography, and formed by sputtered metal of silver, platinum, or other high-conductivity metal.

  4. Ultra-large bandwidth hollow-core guiding in all-silica bragg fibers with nano-supports

    DEFF Research Database (Denmark)

    Vienne, Guillaume; Xu, Yong; Jakobsen, Christian;

    2004-01-01

    We demonstrate a new class of hollow-core Bragg fibers that are composed of concentric cylindrical silica rings separated by nanoscale support bridges. We theoretically predict and experimentally observe hollow-core confinement over an octave frequency range. The bandwidth of bandgap guiding...... in this new class of Bragg fibers exceeds that of other hollow-core fibers reported in the literature. With only three rings of silica cladding layers, these Bragg fibers achieve propagation loss of the order of 1 dB/m....

  5. Interference of selective higher-order modes in optical fibers

    Institute of Scientific and Technical Information of China (English)

    Li Enbang; Peng Gangding

    2007-01-01

    The interference of selective higher-order modes in optical fibers is investigated both theoretically and experimentally.It has been demonstrated that by coupling the LP01 mode in a step-index single-mode fiber(SMF)to the LPom modes in step-index muhimode fibers(MMFs)with different parameters,one can selectively generate higher-order modes and construct all-fiber interferometers.The research presented in this paper forms a basis of a new type of fiber devices with potential applications in fiber sensing,optical fiber communications,and optical signal processing.

  6. Experimental studies of radiation resistance of boron nitride, C2C ceramics Al2O3 and carbon-fiber composites using a PF-1000 plasma-focus device

    Science.gov (United States)

    Gribkov, V. A.; Tuniz, C.; Demina, E. V.; Dubrovsky, A. V.; Pimenov, V. N.; Maslyaev, S. V.; Gaffka, R.; Gryaznevich, M.; Skladnik-Sadowska, E.; Sadowski, M. J.; Miklaszewski, R.; Paduch, M.; Scholz, M.

    2011-04-01

    This paper reports on experiments undertaken to compare the radiation resistance of two types of ceramics, boron nitride (BN) and pure alumina (Al2O3), which are used in a TAEA antenna coil installed in the MAST spherical tokamak. Samples of the investigated materials (bulk BN and a 20 μm film of Al2O3 on Al substrate) were exposed on the axis of the plasma-focus PF-1000 device, which can emit intense streams of hot plasma (v≈107 cm s-1 and Npl≈1018 cm-3) and fast deuteron beams (Ei≈100 keV). The most powerful plasma-ion pulse lasted 0.2-1.0 μs and its intensity decayed in about 100 μs. The irradiation process was diagnosed using fast optical cameras, laser interferometry and optical spectrometry. Experiments were performed at power flux densities equal to 109-1010 W cm-2 or 108-109 W cm-2 during the most powerful stage of the interaction process. The irradiated specimens were investigated by means of optical microscopy and x-ray structure analysis (XRSA). It was shown that at 1010 W cm-2 pulses the Al2O3 coating was completely evaporated, whereas a surface of the BN sample became smoother than in the virgin one. A direct comparison of both samples after the action of 108 W cm-2 pulses demonstrated a wave-like structure (more distinct on Al2O3). Weighing of these samples showed, however, that the evaporation of BN was about two times stronger than that of Al2O3 in spite of the lower irradiation flux; the XRSA showed no evidence of cracking of Al2O3 after these pulses. The insulation properties of Al2O3 did not decline, and the Al2O3 coating may be potentially more beneficial, provided that it is kept below its melting point. Characteristic features of damages of a material based on the carbon-fiber composite with additions of silicium carbide (SiC; 8-40% volumetric) were also investigated. It was found that at q=109 W cm-2, the surface erosion is associated with sputtering and evaporation. The degree of this erosion depends on the fibers' orientation in

  7. Polarization splitter based on dual core liquid crystal-filled holey fiber

    Science.gov (United States)

    Wang, Er-Lei; Jiang, Hai-Ming; Xie, Kang; Chen, Chun; Hu, Zhi-Jia

    2016-09-01

    Through filling the liquid crystal into the air holes of a dual-core holey fiber with a simple structure, the transmission mechanism of the fiber is changed from total internal reflection to photonic bandgap (PBG), and a polarization splitter based on the liquid crystal-filled dual-core PBG holey fiber is investigated. The results demonstrate that, by setting appropriate geometrical parameters, the polarization splitter possesses a short length of 890.5 μm, and its wide bandwidth of ˜150 nm almost covers all the S, C, and L communication bands. Besides, it has an excellent electro-interference-resistance property and certain sensitivity to temperature.

  8. Cladding defects in hollow core fibers for surface mode suppression and improved birefringence

    DEFF Research Database (Denmark)

    Michieletto, Mattia; Lyngso, J. K.; Lægsgaard, Jesper;

    2014-01-01

    We demonstrate a novel polarization maintaining hollow-core photonic bandgap fiber geometry that reduces the impact of surface modes on fiber transmission. The cladding structure is modified with a row of partially collapsed holes to strip away unwanted surface modes. A theoretical investigation...... of the surface mode stripping is presented and compared to the measured performance of four 7-cells core fibers that were drawn with different collapse ratio of the defects. The varying pressure along the defect row in the cladding during drawing introduces an ellipticity of the core. This, combined...

  9. Preparation and characterization of activated carbon fiber (ACF) from cotton woven waste

    Science.gov (United States)

    Zheng, Jieying; Zhao, Quanlin; Ye, Zhengfang

    2014-04-01

    In this study, the activated carbon fibers (ACFs) were prepared using cotton woven waste as precursor. The cotton woven waste was first partly dissolved by 80% phosphoric acid and then was pre-soaked in 7.5% diammonium hydrogen phosphate solution. Finally, carbonization and activation were proceeded to get ACF. The optimum preparation conditions, including carbonization temperature, carbonization time, activation temperature and activation time, were chosen by orthogonal design. Nitrogen adsorption/desorption test was conducted to characterize the prepared ACF's pore structure. Fourier transform infrared spectroscopy (FTIR) analysis, X-ray photoelectron spectroscopy (XPS) and environmental scanning electron microscope (ESEM) were employed to characterize its chemical properties and morphology. Adsorption of oilfield wastewater was used to evaluate its adsorption properties. The results show that the prepared ACF is in the form of fiber, with the sectional diameters of 11.7 × 2.6 μm and the surface area of 789 m2/g. XPS results show that carbon concentration of the prepared ACF is higher than that of the commercial ACF. When the prepared ACF dosage is 6 g/L, over 80% of COD and over 70% of chrominance can be removed after 24 h of adsorption at 18 °C. We demonstrated the catalytic growth of m-axial InxGa1-xN (0.10 ≤ x ≤ 0.17) nanocolumn arrays with high crystallinity on silicon substrates using metal-organic chemical vapor deposition with trimethylindium (TMIn), triethylgallium (TEGa), and ammonia as precursors. The high quality of InGaN nanocolumns (NCs) were believed to be due to the utilization of TEGa that achieved less carbon impurities and offered more comparable vapor pressure with that of TMIn at low temperature. In addition, these NCs were grown in non-polar m-axis, which the internal electric field of the InGaN that often deteriorates the device performances might be able to be eliminated. Furthermore, the bandgap of this InGaN can be modulated from

  10. Five wavelength DFB fiber lase source

    DEFF Research Database (Denmark)

    Varming, Poul; Hübner, Jörg; Kristensen, M.

    1997-01-01

    Stable single-mode laser sources with narrow linewidth are key components in high-capacity wavelength-division multiplexed (WDM) optical communication systems. Distributed feedback (DFB) and distributed Bragg reflection (DBR) fiber lasers are compact devices, which are able to provide stable single......-mode operation. They are inherently fiber compatible and cascadable. We present a multiwavelength laser source consisting of five fiber DFB lasers spliced together and pumped by a single 60-mW 1480-nm semiconductor laser...

  11. Active Structural Fibers for Multifunctional Composite Materials

    Science.gov (United States)

    2014-05-06

    Sebald [3] used extrusion methods to produce fibers with a platinum core surrounded by a PNN-PZT/ polymer binder which was fired to leave a platinum/PNN...researchers have developed composite piezoelectric devices consisting of an active piezoceramic fiber embedded in a polymer matrix. The polymer matrix acts...active fibers are embedded in a polymer matrix, the rule of mixtures can be applied again a second time by taking the piezoelectric shell to be an

  12. TiO2 anatase with a bandgap in the visible region.

    Science.gov (United States)

    Dette, Christian; Pérez-Osorio, Miguel A; Kley, Christopher S; Punke, Paul; Patrick, Christopher E; Jacobson, Peter; Giustino, Feliciano; Jung, Soon Jung; Kern, Klaus

    2014-11-12

    TiO2 anatase plays a central role in energy and environmental research. A major bottleneck toward developing artificial photosynthesis with TiO2 is that it only absorbs ultraviolet light, owing to its large bandgap of 3.2 eV. If one could reduce the bandgap of anatase to the visible region, TiO2-based photocatalysis could become a competitive clean energy source. Here, using scanning tunneling microscopy and spectroscopy in conjunction with density functional theory calculations, we report the discovery of a highly reactive titanium-terminated anatase surface with a reduced bandgap of less than 2 eV, stretching into the red portion of the solar spectrum. By tuning the surface preparation conditions, we can reversibly switch between the standard anatase surface and the newly discovered low bandgap surface phase. The identification of a TiO2 anatase surface phase with a bandgap in the visible and high chemical reactivity has important implications for solar energy conversion, photocatalysis, and artificial photosynthesis.

  13. The Development of Advanced Optical Fibers for Long-Wave Infrared Transmission

    Directory of Open Access Journals (Sweden)

    Pierre Lucas

    2013-12-01

    Full Text Available Long-wave infrared fibers are used in an increasing number of applications ranging from thermal imaging to bio-sensing. However, the design of optical fiber with low-loss in the far-infrared requires a combination of properties including good rheological characteristics for fiber drawing and low phonon energy for wide optical transparency, which are often mutually exclusive and can only be achieved through fine materials engineering. This paper presents strategies for obtaining low loss fibers in the far-infrared based on telluride glasses. The composition of the glasses is systematically investigated to obtained fibers with minimal losses. The fiber attenuation is shown to depend strongly on extrinsic impurity but also on intrinsic charge carrier populations in these low band-gap amorphous semiconductor materials.

  14. Photonic crystal rod fibers: Understanding a new class of active optical waveguides

    DEFF Research Database (Denmark)

    Laurila, Marko

    In this PhD thesis an experimental study of modal characterization methods on large mode area photonic crystal fibers (PCFs) is performed and the development of a new ytterbium-doped photonic bandgap PCF rod fiber is presented. The first focus of this work is to use modal characterization methods...... core modes and the cladding band as the underlying mechanics to ensure SM operation of the new rod fiber design (85 μm core diameter), which was developed during this thesis work. The second focus of this work is the study of the new ytterbiumdoped rod fiber design under active operation. Performance...... of the rod fiber is evaluated in high power laser and laser amplifier configurations. The high power rod amplifier setup including the seed source is developed and characterized. Results obtained from the rod fiber showed simultaneously SM, near diffraction limited output beam quality with high average power...

  15. Diode Pumped Fiber Laser.

    Science.gov (United States)

    1984-12-01

    FIBER LASERS I. Nd:YAG FIBER LASER FABRICATION .............. 5 A. FIBER GROWTH .......................... 5 B. FIBER PROCESSING 7...1.32 pm FIBER LASERS I. Nd:YAG FIBER LASER FABRICATION A. FIBER GROWTH The single crystal fibers used in this work were grown at Stanford University

  16. A hot-electron thermophotonic solar cell demonstrated by thermal up-conversion of sub-bandgap photons.

    Science.gov (United States)

    Farrell, Daniel J; Sodabanlu, Hassanet; Wang, Yunpeng; Sugiyama, Masakazu; Okada, Yoshitaka

    2015-11-06

    The direct conversion of solar energy to electricity can be broadly separated into two main categories: photovoltaics and thermal photovoltaics, where the former utilizes gradients in electrical potential and the latter thermal gradients. Conventional thermal photovoltaics has a high theoretical efficiency limit (84%) but in practice cannot be easily miniaturized and is limited by the engineering challenges of sustaining large (>1,000 K) temperature gradients. Here we show a hot-carrier-based thermophotonic solar cell, which combines the compact nature of photovoltaic devices with the potential to reach the high-efficiency regime of thermal photovoltaics. In the device, a thermal gradient of 500 K is established by hot electrons, under Stokes illumination, rather than by raising the temperature of the material itself. Under anti-Stokes (sub-bandgap) illumination we observe a thermal gradient of ∼20 K, which is maintained by steady-state Auger heating of carriers and corresponds to a internal thermal up-conversion efficiency of 30% between the collector and solar cell.

  17. The Role of Fullerene Mixing Behavior in the Performance of Organic Rhotovoltaics: PCBM in Low-Bandgap Polymers.

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Huipeng [ORNL; Peet, Jeff [Konarka Technologies; Hu, Sheng [ORNL; Azoulay, Jason [University of California, Santa Barbara; Bazan, Guillermo [University of California, Santa Barbara; Dadmun, Mark D [ORNL

    2014-01-01

    This manuscript reports the mixing behavior, interdiffusion, and depth profile of 1-[3-(methoxycarbonyl)propyl]-1-phenyl-[6,6]C 61 (PCBM):low-bandgap (LBG) polymer thin fi lms that are formed by thermally annealing initial bilayers. The extent of mixing of PCBM is higher in polymers that include the 2,1,3-benzothiadiazole (BT) unit than in polymers that incorporate the 2,1,3-benzooxadiazole (BO) unit. This difference is ascribed to the enhanced mixing behavior of PCBM with the benzothiadiazole functionality than with benzooxadiazole functionality, which is attributed to preferred intermolecular interactions. The increased polymer/fullerene mixing is found to be crucial for optimal device performance. A decrease of polymer/fullerene mixing reduces the donor/acceptor interface, which lowers the probability of exciton dissociation and charge generation. Moreover, low PCBM mixing provides limited pathways for electron transport out of a miscible region, due to long distances between adjacent PCBM in such a miscible phase. This inhibits electron transport and increases the recombination of free charge carriers, resulting in a decrease in short circuit current and device performance. These results further exemplify the importance of the thermodynamic mixing behavior of the polymer:fullerene pair in designing next-generation conjugated polymers for organic photovoltaic (OPV) applications, as this controls the fi nal morphology of the OPV active layer.

  18. 一种耐高温光纤式叶尖定时传感器及验证装置%An Optical Fiber Tip-Timing Sensor with High Temperature Resistant Capability and Testing Device

    Institute of Scientific and Technical Information of China (English)

    冯军楠; 段发阶; 叶德超; 金鑫杰; 郑嘉楠

    2016-01-01

    为满足航空发动机压气机叶片振动监测的高温要求,设计了一种能够耐650℃高温的新型光纤式叶尖定时传感器.采用金属保护结构及涂覆高温胶技术提高了传感器探头的耐温性能.在此基础上,设计了一种模拟叶尖定时传感器高温工作环境的验证装置,对改进后的光纤式叶尖定时传感器进行了高温试验.试验结果表明,该型传感器能够耐受650℃工作环境,满足航空发动机高压压气机叶片振动参数监测的要求.%To meet the high temperature requirements for the vibration monitoring of aero-engine com-pressor blades, a new optical fiber tip-timing sensor which can resist 650 ℃ high temperature was de-signed. The application of metal protective structure and high-temperature plastic coating technology has improved the high temperature resistant capability of the sensor probe. Meanwhile, a testing device that can simulate the high temperature working environment of tip-timing sensors was designed, and a high temperature experiment was carried out to verify the working capability of the sensor. Results show that this type of sensor can resist the high temperature of 650 ℃, meeting the requirements to measure the blade vibration parameters of the aero-engine high-pressure compressor.

  19. Analysis of band gap of non-bravais lattice photonic crystal fiber

    Institute of Scientific and Technical Information of China (English)

    Yichao MA; Heming CHEN

    2009-01-01

    This article designs a novel type ofnon-bravais lattice photonic crystal fiber. To form the nesting complexperiod with positive and negative refractive index materials respectively, a cylinder with the same radius and negative refractive index is introduced into the center of each lattice unit cell in the traditional square lattice air-holes photonic crystal fiber. The photonic band-gap of the photonic crystal fiber is calculated numerically by the plane wave expansion method. The result shows that compared with the traditional square photonic band-gap fiber (PBGF),when R/A is 0.35, the refractive index of the substrate, airhole, and medium-column are 1.30, 1.0, and -1.0,respectively. This new PBGF can transmit signal by the photonic band-gap effect. When the lattice constant Λvaries from 1.5 μm to 3.0 μm, the range of the wavelength ranges from 880 nm to 2300 nm.

  20. Two Fiber Optical Fiber Thermometry

    Science.gov (United States)

    Jones, Mathew R.; Farmer, Jeffery T.; Breeding, Shawn P.

    2000-01-01

    An optical fiber thermometer consists of an optical fiber whose sensing tip is given a metallic coating. The sensing tip of the fiber is essentially an isothermal cavity, so the emission from this cavity will be approximately equal to the emission from a blackbody. Temperature readings are obtained by measuring the spectral radiative heat flux at the end of the fiber at two wavelengths. The ratio of these measurements and Planck's Law are used to infer the temperature at the sensing tip. Optical fiber thermometers have high accuracy, excellent long-term stability and are immune to electromagnetic interference. In addition, they can be operated for extended periods without requiring re-calibration. For these reasons. it is desirable to use optical fiber thermometers in environments such as the International Space Station. However, it has recently been shown that temperature readings are corrupted by emission from the fiber when extended portions of the probe are exposed to elevated temperatures. This paper will describe several ways in which the reading from a second fiber can be used to correct the corrupted temperature measurements. The accuracy and sensitivity to measurement uncertainty will be presented for each method.

  1. Self-collimated waveguide bends and partial bandgap reflection of photonic crystals with parallelogram lattice.

    Science.gov (United States)

    Gao, Dingshan; Zhou, Zhiping; Citrin, David S

    2008-03-01

    The photonic crystal structure with parallelogram lattice, capable of bending a self-collimated wave with free angles and partial bandgap reflection, is presented. The equifrequency contours show that the direction of the collimation wave can be turned by tuning the angle between the two basic vectors of the lattice. Acute, right, and obtuse angles of collimating waveguide bends have been realized by arc lattices of parallelogram photonic crystals. Moreover, partial bandgap reflection of the parallelogram lattice photonic crystals is validated from the equifrequency contours and the projected band structures. A waveguide taper based on this partial bandgap reflection is also designed and proved to have above 85% transmittance over a very wide operating bandwidth of 180 nm.

  2. Energy bandgap variation in oblique angle-deposited indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyurin; Kim, Hyunsoo; Cho, Jaehee, E-mail: jcho@chonbuk.ac.kr [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Park, Jun Hyuk; Kim, Jong Kyu [Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 54896 (Korea, Republic of); Fred Schubert, E. [Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2016-01-25

    Indium tin oxide (ITO) thin films deposited using the oblique angle deposition (OAD) technique exhibit a strong correlation between structural and optical properties, especially the optical bandgap energy. The microstructural properties of ITO thin films are strongly influenced by the tilt angle used during the OAD process. When changing the tilt angle, the refractive index, porosity, and optical bandgap energy of ITO films also change due to the existence of a preferential growth direction at the interface between ITO and the substrate. Experiments reveal that the ITO film's optical bandgap varies from 3.98 eV (at normal incident deposition) to 3.87 eV (at a 60° tilt angle)

  3. Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof

    Science.gov (United States)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2012-01-01

    "Super-hetero-epitaxial" combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a "Tri-Unity" system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF.sub.3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

  4. A Unified Understanding of the Thickness-Dependent Bandgap Transition in Hexagonal Two-Dimensional Semiconductors.

    Science.gov (United States)

    Kang, Joongoo; Zhang, Lijun; Wei, Su-Huai

    2016-02-18

    Many important layered semiconductors, such as hexagonal boron nitride (hBN) and transition-metal dichalcogenides (TMDs), are derived from a hexagonal lattice. A single layer of such hexagonal semiconductors generally has a direct bandgap at the high-symmetry point K, whereas it becomes an indirect, optically inactive semiconductor as the number of layers increases to two or more. Here, taking hBN and MoS2 as examples, we reveal the microscopic origin of the direct-to-indirect bandgap transition of hexagonal layered materials. Our symmetry analysis and first-principles calculations show that the bandgap transition arises from the lack of the interlayer orbital couplings for the band-edge states at K, which are inherently weak because of the crystal symmetries of hexagonal layered materials. Therefore, it is necessary to judiciously break the underlying crystal symmetries to design more optically active, multilayered semiconductors from hBN or TMDs.

  5. Squeezed hollow-core photonic Bragg fiber for surface sensing applications.

    Science.gov (United States)

    Li, Jingwen; Qu, Hang; Skorobogatiy, Maksim

    2016-07-11

    We propose to use squeezed hollow-core photonic bandgap Bragg fibers for surface sensing applications. We demonstrate theoretically and confirm experimentally that squeezing a section of the Bragg fiber core increases overlap between the optical fields of the core guided modes and the modes bound to the sensing layer, thus, significantly enhancing their interaction via anticrossing phenomenon, which, in turn, enhances surface sensitivity of the fiber sensor. As a practical demonstration, we apply our fiber sensor to in situ monitoring of the dissolution dynamics of a sub-micron-thick polyvinyl butyral (PVB) film coated on the surface of the liquid-filled Bragg fiber core. Strong spectral shift is observed during the dissolution of the PVB film, and a surface spectral sensitivity of ~0.07nm/nm is achieved experimentally with aqueous analytes. The proposed fiber sensor offers a new sensing modality and opens new sensing applications for photonic bandgap fibers, such as real-time detection of binding and affinity, study of kinetics, etc. for a range of chemical and biological samples.

  6. Fabrication of fiber-embedded multi-core photonic crystal fibers

    Institute of Scientific and Technical Information of China (English)

    Weimin Sun; Xiaoqi Liu; Fenghua Fu; Jianzhong Zhang

    2008-01-01

    @@ A novel fabrication method of multi-core photonic crystal fibers is proposed on the basis of a fiberembedded technique. A taper tower is used to modify the structures of the fiber preform, and four steps of fiber fabrication and different structures of fiber samples are given. The mode structures and beating characteristics of a photonic crystal fiber sample with two successive cores are investigated in detail with the help of a supercontinuum light source, a charge-coupled device (CCD) camera, and an optical spectrum analyzer. The test results show a clear beating phenomenon between two orthotropic polarization modes with a 2.8-nm peak interval in wavelength.

  7. Performance analysis of CO2 laser polished angled ribbon fiber

    Science.gov (United States)

    Sohn, Ik-Bu; Choi, Hun-Kook; Noh, Young-Chul; Lee, Man-Seop; Oh, Jin-Kyoung; Kim, Seong-min; Ahsan, Md. Shamim

    2017-01-01

    This paper demonstrates CO2 laser assisted simultaneous polishing of angled ribbon fibers consisting eight set of optical fibers. The ribbon fibers were rotated vertically at an angle of 12° and polished by repetitive irradiation of CO2 laser beam at the end faces of the fibers. Compared to mechanically polished sharp edged angled fibers, CO2 laser polishing forms curve edged angled fibers. Increase in the curvature of the end faces of the ribbon fibers causes the increase of the fibers' strength, which in turn represents great robustness against fiber connections with other devices. The CO2 laser polished angled fibers have great smoothness throughout the polished area. The smoothness of the fiber end faces have been controlled by varying the number of laser irradiation. After CO2 laser polishing, the average value of the fiber angle of the ribbon fibers is ∼8.28°. The laser polished ribbon fibers show low insertion and return losses when connecting with commercial optical communication devices. The proposed technique of polishing the angled ribbon fibers is highly replicable and reliable and thus suitable for commercial applications.

  8. An efficient method of DFT/LDA band-gap correction

    Science.gov (United States)

    Scharoch, Pawel; Winiarski, Maciej

    2013-12-01

    It has been shown that the underestimated by DFT/LDA(GGA) band-gap can be efficiently corrected by an averaging procedure of transition energies over a region close to the direct band-gap transition, which we call the Δ(EIG) method (the differences in the Kohn-Sham eigenvalues). For small excitations the averaging appears to be equivalent to the Δ(SCF) approach (differences in the self-consistent energies), which is a consequence of Janak’s theorem and has been confirmed numerically. The Gaussian distribution in k-space for electronic excitation has been used (occupation numbers in the Δ(SCF) or eigenenergy sampling in the Δ(EIG)). A systematic behavior of the k-space localization parameter σk correcting the band-gap has been observed in numerical experiments. On that basis some sampling schemes for band-gap correction have been proposed and tested in the prediction of the band-gap behavior in InxGa(1-x)N semiconducting alloy, and a very good agreement with independent calculations has been obtained. In the context of the work the issue of electron localization in the r-space has been discussed which, as it has been predicted by Mori-Sánchez et al. [P. Mori-Sánchez, A.J. Cohen, W. Yang, Phys. Rev. Lett. 100 (2008) 146401], should reduce the effect of the convex behavior of the LDA/GGA functionals and improve the band-gap prediction within DFT/LDA(GGA). A scheme for electron localization in r-space has been suggested.

  9. Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

    Science.gov (United States)

    Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

    2017-01-18

    Bandgap engineering of kesterite Cu2Zn(Sn, Ge)(S, Se)4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu2Zn(Sn, Ge)(S, Se)4 thin films with tunable bandgap. The bandgap of Cu2Zn(Sn, Ge)(S, Se)4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu2Zn(Sn, Ge)(S, Se)4 thin films exhibits a hall coefficient of +137 cm(3)/C. The resistivity, concentration and carrier mobility of the Cu2ZnSn(S, Se)4 thin film are 3.17 ohm·cm, 4.5 × 10(16) cm(-3), and 43 cm(2)/(V·S) at room temperature, respectively. Moreover, the Cu2ZnSn(S, Se)4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu2Zn(Sn, Ge)(S, Se)4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

  10. A new miniaturized fiber positioning node for LAMOST

    Science.gov (United States)

    Guo, Liang; Gu, Yonggang; Shen, Yuran; Zhai, Chao

    2016-07-01

    To distribute more fiber positioning nodes on the LAMOST focal plate, two steps are proposed to miniaturize the fiber positioning node in this paper. The first step is to miniaturize the mechanical device of the fiber positioning node. The second step is to redesign the entire wireless driving board using smaller and performance-higher devices. As a result, the size of the new miniaturized fiber positioning node has to be reduced by above 40% and the dense of fiber positioning nodes on focal plate increases by 20% at least.

  11. Fiber-bragg grating-loop ringdown method and apparatus

    Science.gov (United States)

    Wang, Chuji

    2008-01-29

    A device comprising a fiber grating loop ringdown (FGLRD) system of analysis is disclosed. A fiber Bragg grating (FBG) or Long-Period grating (LPG) written in a section of single mode fused silica fiber is incorporated into a fiber loop. By utilizing the wing areas of the gratings' bandwidth as a wavelength dependent attenuator of the light transmission, a fiber grating loop ringdown concept is formed. One aspect of the present invention is temperature sensing, which has been demonstrated using the disclosed device. Temperature measurements in the areas of accuracy, stability, high temperature, and dynamic range are also described.

  12. Solution-processable donor-acceptor polymers with modular electronic properties and very narrow bandgaps.

    Science.gov (United States)

    Foster, Michael E; Zhang, Benjamin A; Murtagh, Dustin; Liu, Yi; Sfeir, Matthew Y; Wong, Bryan M; Azoulay, Jason D

    2014-09-01

    Bridgehead imine-substituted cyclopentadithiophene structural units, in combination with highly electronegative acceptors that exhibit progressively delocalized π-systems, afford donor-acceptor (DA) conjugated polymers with broad absorption profiles that span technologically relevant wavelength (λ) ranges from 0.7 electronic properties so as to achieve very narrow optical bandgaps (Eg (opt) < 0.5 eV). This strategy affords modular DA copolymers with broad- and long-wavelength light absorption in the infrared and materials with some of the narrowest bandgaps reported to date.

  13. Enhanced third-harmonic generation in photonic crystals at band-gap pumping

    Science.gov (United States)

    Yurchenko, Stanislav O.; Zaytsev, Kirill I.; Gorbunov, Evgeny A.; Yakovlev, Egor V.; Zotov, Arsen K.; Masalov, Vladimir M.; Emelchenko, Gennadi A.; Gorelik, Vladimir S.

    2017-02-01

    More than one order enhancement of third-harmonic generation is observed experimentally at band-gap pumping of globular photonic crystals. Due to a lateral modulation of the dielectric permittivity in two- and three-dimensional photonic crystals, sharp peaks of light intensity (light localization) arise in the media at the band-gap pumping. The light localization enhances significantly the nonlinear light conversion, in particular, third-harmonic generation, in the near-surface volume of photonic crystal. The observed way to enhance the nonlinear conversion can be useful for creation of novel compact elements of nonlinear and laser optics.

  14. Quasi-two-dimensional optomechanical crystals with a complete phononic bandgap

    CERN Document Server

    Alegre, Thiago P Mayer; Winger, Martin; Painter, Oskar

    2010-01-01

    A fully planar two-dimensional optomechanical crystal formed in a silicon microchip is used to create a structure devoid of phonons in the GHz frequency range. A nanoscale photonic crystal cavity is placed inside the phononic bandgap crystal in order to probe the properties of the localized acoustic modes. By studying the trends in mechanical damping, mode density, and optomechanical coupling strength of the acoustic resonances over an array of structures with varying geometric properties, clear evidence of a complete phononic bandgap is shown.

  15. A novel two-layer compact electromagnetic bandgap (EBG) structure and its applications in microwave circuits

    Institute of Scientific and Technical Information of China (English)

    YANG; Ning(杨宁); CHEN; Zhining; (陈志宁); WANG; Yunyi; (王蕴仪); Chia; M.; Y.; W.

    2003-01-01

    This paper presents a novel two-layer electromagnetic bandgap (EBG) structure. The studies on the characteristics of the cell are carried out numerically and experimentally. A lumped-LC equivalent circuit extracted from the numerical simulation is used to model the bandgap characteristics of the proposed EBG structure. The influences of geometric parameters on the operation frequency and equivalent LC parameters are discussed. A meander line high performance bandstop filter and a notch type duplexer are designed and measured. These EBG structures are shown to have potential applications in microwave and RF systems.

  16. A Super Performance Bandgap Voltage Reference with Adjustable Output for DC-DC Converter

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    This paper presents a super performance bandgap voltage reference for DC-DC converter with adjustable output. It generates a wide range of voltage reference ranging from sub- 1V to 1.221 7 V and has a low temperature coefficient of 2.3 × 10 - 5/K over the temperature variation using the current feedback and resistive subdivision. In addition, the power supply rejection ration of the proposed bandgap voltage reference is 78 dB. When supply voltage varies from 2.5 V to 6 V, output VREF is 1.221 685 ± 0.055 mV.

  17. Strain dependence of the direct energy bandgap in thin silicon on insulator layers

    OpenAIRE

    Munguía, J; Bluet, J-M; Chouaib, H.; Bremond, G.; Mermoux, Michel; Bru-Chevallier, C

    2010-01-01

    Abstract Photoreflectance spectroscopy is applied on tensilely-strained silicon on insulator (sSOI) thin layers in order to evaluate the biaxial strain effect on the Si direct bandgap. The measured redshift of the transition (i.e. direct bandgap) with strain (~ -100 meV/%), corresponds to theoretical predictions. The hydrostatic and valence band deformation potential parameters for E 1 (i.e. transition close to L-point along the ?-direction) are also measured: and ' 0 E eV D 5. 0 5 . 7 1 1...

  18. Bandgap engineering of rippled MoS2 monolayer under external electric field

    Science.gov (United States)

    Qi, Jingshan; Li, Xiao; Qian, Xiaofeng; Feng, Ji

    2013-04-01

    In this letter we propose a universal strategy combining external electric field with the ripple of membrane to tune the bandgap of semiconducting atomic monolayer. By first-principles calculations we show that the bandgap of rippled MoS2 monolayer can be tuned in a large range by vertical external electric field, which is expected to have little effect on MoS2 monolayer. This phenomenon can be explained from charge redistribution under external electric field by a simple model. This may open an avenue of optimizing monolayer MoS2 for electronic and optoelectronic applications by surface patterning.

  19. In-fiber integrated chemiluminiscence online optical fiber sensor.

    Science.gov (United States)

    Yang, Xinghua; Yuan, Tingting; Yang, Jun; Dong, Biao; Liu, Yanxin; Zheng, Yao; Yuan, Libo

    2013-09-01

    We report an in-fiber integrated chemiluminiscence (CL) sensor based on a kind of hollow optical fiber with a suspended inner core. The path of microfluid is realized by etching microholes for inlets and outlets on the surface of the optical fiber without damaging the inner core and then constructing a melted point beside the microhole of the outlet. When samples are injected into the fiber, the liquids can be fully mixed and form steady microflows. Simultaneously, the photon emitted from the CL reaction is efficiently coupled into the core and can be detected at the end of the optical fiber. In this Letter, the concentration of H2O2 samples is analyzed through the emission intensity of the CL reaction among H2O2, luminol, K3Fe(CN)6, and NaOH in the optical fiber. The linear sensing range of 0.1-4.0 mmol/L of H2O2 concentration is obtained. The emission intensity can be determined within 400 ms at a total flow rate of 150 μL/min. Significantly, this work presents the information of developing in-fiber integrated online analyzing devices based on optical methods.

  20. Optical bistability in fiber ring resonator containing an erbium doped fiber amplifier and quantum dot doped fiber saturable absorber.

    Science.gov (United States)

    Tofighi, Sara; Farshemi, Somayeh Safari; Sajjad, Batool; Shahshahani, Fatemeh; Bahrampour, Ali Reza

    2012-10-10

    In this paper we study the optical bistability in a double coupler fiber ring resonator which consists of an erbium doped fiber amplifier (EDFA) in half part of the fiber ring and a quantum dot doped fiber (QDF) saturable absorber in the other half. The bistability is provided by the QDF section of the ring resonator. The EDFA is employed to reduce the switching power. The transmitted and reflected bistability characteristics are investigated. It is shown that the switching power for this new bistable device is less than 10 mW.