Thermally controlled mid-IR band-gap engineering in all-glass chalcogenide microstructured fibers: a numerical study

DEFF Research Database (Denmark)

Barh, Ajanta; Varshney, Ravi K.; Pal, Bishnu P.

2017-01-01

Presence of photonic band-gap (PBG) in an all-glass low refractive index (RI) contrast chalcogenide (Ch) microstructured optical fibers (MOFs) is investigated numerically. The effect of external temperature on the position of band-gap is explored to realize potential fiber-based wavelength filters....... Then the temperature sensitivity of band-gaps is investigated to design fiber-based mid-IR wavelength filters/sensors....

Silica-air photonic crystal fiber design that permits waveguiding by a true photonic bandgap effect

DEFF Research Database (Denmark)

Barkou, Stig Eigil; Broeng, Jes; Bjarklev, Anders Overgaard

1999-01-01

A theoretical investigation of a novel type of optical fiber is presented. The operation of the fiber relies entirely on wave guidance through the photonic bandgap effect and not on total internal reflection, thereby distinguishing that fiber from all other known fibers, including recently studied...... photonic crystal fibers. The novel fiber has a central low-index core region and a cladding consisting of a silica background material with air holes situated within a honeycomb lattice structure. We show the existence of photonic bandgaps for the silica–air cladding structure and demonstrate how light can...... be guided at the central low-index core region for a well-defined frequency that falls inside the photonic bandgap region of the cladding structure....

A 158 fs 5.3 nJ fiber-laser system at 1 mu m using photonic bandgap fibers for dispersion control and pulse compression

DEFF Research Database (Denmark)

Nielsen, C.K.; Jespersen, Kim Giessmann; Keiding, S.R.

2006-01-01

We demonstrate a 158 fs 5.3 nJ mode-locked laser system based on a fiber oscillator, fiber amplifier and fiber compressor. Dispersion compensation in the fiber oscillator was obtained with a solid-core photonic bandgap (SC-PBG) fiber spliced to standard fibers, and external compression is obtained...... with a hollow-core photonic bandgap (HC-PBG) fiber....

Design of photonic bandgap fibers by topology optimization

DEFF Research Database (Denmark)

Dühring, Maria Bayard; Sigmund, Ole; Feurer, Thomas

2010-01-01

A method based on topology optimization is presented to design the cross section of hollow-core photonic bandgap fibers for minimizing energy loss by material absorption. The optical problem is modeled by the timeharmonic wave equation and solved with the finite element program Comsol Multiphysics...

A 98 W 1178 nm Yb-doped solid-core photonic bandgap fiber oscillator

International Nuclear Information System (INIS)

Fan, Xinyan; Chen, Mingchen; Shirakawa, Akira; Ueda, Ken-ichi; Olausson, Christina B; Broeng, Jes

2013-01-01

A high-power ytterbium-doped solid-core photonic bandgap fiber laser directly oscillating at 1178 nm is reported. The sharp-cut bandpass distributed filtering effect of photonic bandgap fiber can suppress amplified spontaneous emission (ASE) in the conventional high-gain spectral region. The oscillator is composed of a high reflection fiber Bragg grating spliced with a 39 m gain fiber and a Fresnel fiber end surface. A model based on rate equations is investigated numerically. A record output power of 98 W is achieved with a slope efficiency of 54%. The laser linewidth is 0.5 nm. The spectrum at 98 W indicates that ASE and parasitic lasing are suppressed effectively. (letter)

Soliton formation in hollow-core photonic bandgap fibers

DEFF Research Database (Denmark)

Lægsgaard, Jesper

2009-01-01

of an approximate scaling relation is tested. It is concluded that compression of input pulses of several ps duration and sub-MW peak power can lead to a formation of solitons with ∼100 fs duration and multi-megawatt peak powers. The dispersion slope of realistic hollow-core fibers appears to be the main obstacle......The formation of solitons upon compression of linearly chirped pulses in hollow-core photonic bandgap fibers is investigated numerically. The dependence of soliton duration on the chirp and power of the input pulse and on the dispersion slope of the fiber is investigated, and the validity...

Mode Division Multiplexing Exploring Hollow-Core Photonic Bandgap Fibers

DEFF Research Database (Denmark)

Xu, Jing; Lyngso, Jens Kristian; Leick, Lasse

2013-01-01

We review our recent exploratory investigations on mode division multiplexing using hollow-core photonic bandgap fibers (HC-PBGFs). Compared with traditional multimode fibers, HC-PBGFs have several attractive features such as ultra-low nonlinearities, low-loss transmission window around 2 µm etc....... After having discussed the potential and challenges of using HC-PBGFs as transmission fibers for mode multiplexing applications, we will report a number of recent proof-of-concept results obtained in our group using direct detection receivers. The first one is the transmission of two 10.7 Gbit/s non...

High-Power Yb-Doped Solid-Core Photonic Bandgap Fiber Amplifier at 1150-1200nm

DEFF Research Database (Denmark)

Maruyama, H.; Shirakawa, A.; Ueda, K.

2008-01-01

Solid-core photonic-bandgap fiber amplification at the long-wavelength edge of ytterbium band is reported. A 32W output at 1156nm with a 66% slope efficiency and 9.1W output at 1178nm were succesfully obtained.......Solid-core photonic-bandgap fiber amplification at the long-wavelength edge of ytterbium band is reported. A 32W output at 1156nm with a 66% slope efficiency and 9.1W output at 1178nm were succesfully obtained....

Noise filtering in a multi-channel system using a tunable liquid crystal photonic bandgap fiber

DEFF Research Database (Denmark)

Petersen, Martin Nordal; Scolari, Lara; Tokle, Torger

2008-01-01

This paper reports on the first application of a liquid crystal infiltrated photonic bandgap fiber used as a tunable filter in an optical transmission system. The device allows low-cost amplified spontaneous emission (ASE) noise filtering and gain equalization with low insertion loss and broad...... tunability. System experiments show that the use of this filter increases for times the distance over which the optical signal-to-noise ratio (OSNR) is sufficient for error-free transmission with respect to the case in which no filtering is used....

Microstructured and Photonic Bandgap Fibers for Applications in the Resonant Bio- and Chemical Sensors

Directory of Open Access Journals (Sweden)

Maksim Skorobogatiy

2009-01-01

Full Text Available We review application of microstructured and photonic bandgap fibers for designing resonant optical sensors of changes in the value of analyte refractive index. This research subject has recently invoked much attention due to development of novel fiber types, as well as due to development of techniques for the activation of fiber microstructure with functional materials. Particularly, we consider two sensors types. The first sensor type employs hollow core photonic bandgap fibers where core guided mode is confined in the analyte filled core through resonant effect in the surrounding periodic reflector. The second sensor type employs metalized microstructured or photonic bandgap waveguides and fibers, where core guided mode is phase matched with a plasmon propagating at the fiber/analyte interface. In resonant sensors one typically employs fibers with strongly nonuniform spectral transmission characteristics that are sensitive to changes in the real part of the analyte refractive index. Moreover, if narrow absorption lines are present in the analyte transmission spectrum, due to Kramers-Kronig relation this will also result in strong variation in the real part of the refractive index in the vicinity of an absorption line. Therefore, resonant sensors allow detection of minute changes both in the real part of the analyte refractive index (10−6–10−4 RIU, as well as in the imaginary part of the analyte refractive index in the vicinity of absorption lines. In the following we detail various resonant sensor implementations, modes of operation, as well as analysis of sensitivities for some of the common transduction mechanisms for bio- and chemical sensing applications. Sensor designs considered in this review span spectral operation regions from the visible to terahertz.

Millijoule Pulse Energy Second Harmonic Generation With Single-Stage Photonic Bandgap Rod Fiber Laser

DEFF Research Database (Denmark)

Laurila, Marko; Saby, Julien; Alkeskjold, Thomas Tanggaard

2011-01-01

In this paper, we demonstrate, for the first time, a single-stage Q-switched single-mode (SM) ytterbium-doped rod fiber laser delivering record breaking pulse energies at visible and UV light. We use a photonic bandgap rod fiber with a mode field diameter of 59μm based on a new distributed...

Theory of adiabatic pressure-gradient soliton compression in hollow-core photonic bandgap fibers

DEFF Research Database (Denmark)

Lægsgaard, Jesper; Roberts, John

2009-01-01

Adiabatic soliton compression by means of a pressure gradient in a hollow-core photonic bandgap fiber is investigated theoretically and numerically. It is shown that the dureation of the compressed pulse is limited mainly by the interplay between third-order dispersion and the Raman-induced soliton...... frequency shift. Analytical expressions for this limit are derived and compared with results of detailed numerical simulations for a realistic fiber structure....

Transmission properties of hollow-core photonic bandgap fibers in relation to molecular spectroscopy

DEFF Research Database (Denmark)

Falk, Charlotte Ijeoma; Hald, Jan; Petersen, Jan C.

2010-01-01

The transmission properties of five types of hollow-core photonic bandgap fibers (HC-PBFs) are characterized in the telecom wavelength range around 1:5 μm. The variations in optical transmission are measured as a function of laser frequency over a 2GHz scan range as well as a function of time over...

Device Modeling of the Performance of Cu(In,GaSe2 Solar Cells with V-Shaped Bandgap Profiles

Directory of Open Access Journals (Sweden)

Shou-Yi Kuo

2014-01-01

Full Text Available The effect of Cu(In,GaSe2 (CIGS with V-shaped bandgap on device performance is investigated in detail. A series of Ga/(In+Ga ratio are set to study the influence of V-shaped bandgap profile on the electricity of CIGS thin film solar cells. The modeling of device current density-voltage (J-V curve and bandgap grading profile corresponded well to measurement results. Detailed characteristic and modeling results show that an increased gradient of bandgap from valley to the buffer layer CdS will result in a barrier and lead to an enhanced recombination in the valley. This phenomenon can be modified by the back electric field resulting from a gradient bandgap from valley (bandgap minimum to the Mo back contact. These results indicate CIGS-based solar cells can achieve higher performance by optimizing the V-shaped bandgap profile.

Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

Directory of Open Access Journals (Sweden)

Kuen-Hsien Wu

2015-09-01

Full Text Available Porous-silicon (PS multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells.

Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

Energy Technology Data Exchange (ETDEWEB)

Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

2016-06-16

Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

Science.gov (United States)

Brillson, L. J.; Foster, G. M.; Cox, J.; Ruane, W. T.; Jarjour, A. B.; Gao, H.; von Wenckstern, H.; Grundmann, M.; Wang, B.; Look, D. C.; Hyland, A.; Allen, M. W.

2018-03-01

Wide-bandgap semiconductors are now leading the way to new physical phenomena and device applications at nanoscale dimensions. The impact of defects on the electronic properties of these materials increases as their size decreases, motivating new techniques to characterize and begin to control these electronic states. Leading these advances have been the semiconductors ZnO, GaN, and related materials. This paper highlights the importance of native point defects in these semiconductors and describes how a complement of spatially localized surface science and spectroscopy techniques in three dimensions can characterize, image, and begin to control these electronic states at the nanoscale. A combination of characterization techniques including depth-resolved cathodoluminescence spectroscopy, surface photovoltage spectroscopy, and hyperspectral imaging can describe the nature and distribution of defects at interfaces at both bulk and nanoscale surfaces, their metal interfaces, and inside nanostructures themselves. These features as well as temperature and mechanical strain inside wide-bandgap device structures at the nanoscale can be measured even while these devices are operating. These advanced capabilities enable several new directions for describing defects at the nanoscale, showing how they contribute to device degradation, and guiding growth processes to control them.

Design of a Polymer-Based Hollow-Core Bandgap Fiber for Low-Loss Terahertz Transmission

DEFF Research Database (Denmark)

Barh, Ajanta; Varshney, Ravi K.; Pal, Bishnu P.

2016-01-01

wavelength-scale circular air holes in a hexagonal pattern, embedded in a uniform Teflon matrix. The THz guidance in this fiber is achieved by exploiting the photonic bandgap (PBG) effect. In our low index contrast Teflon-air (1.44:1) hexagonal periodic lattice, the PBG appears only for a certain range...

Influence of air pressure on soliton formation in hollow-core photonic bandgap fibers

DEFF Research Database (Denmark)

Lægsgaard, Jesper; Roberts, Peter John

2009-01-01

Abstract Soliton formation during dispersive compression of chirped few-picosecond pulses at the microjoule level in a hollow-core photonic bandgap (HC-PBG) fiber is studied by numerical simulations. Long-pass filtering of the emerging frequency-shifted solitons is investigated with the objective...... of obtaining pedestal-free output pulses. Particular emphasis is placed on the influence of the air pressure in the HC-PBG fiber. It is found that a reduction in air pressure enables an increase in the fraction of power going into the most redshifted soliton and also improves the quality of the filtered pulse...

Fabrication and characterization of an all-solid tellurite-phosphate photonic bandgap fiber.

Science.gov (United States)

Cheng, Tonglei; Sakai, Yukiko; Suzuki, Takenobu; Ohishi, Yasutake

2015-05-01

We present an all-solid tellurite-phosphate photonic bandgap fiber (PBGF) with two layers of high-index rods (TeO2-Li2O-WO3-MoO3-Nb2O5, TLWMN) in the cladding (TeO2-ZnO-Li2O-K2O-Al2O3-P2O5, TZLKAP). TLWMN and TZLKAP glasses have good compatibility for fabricating the all-solid PBGF. Photonic bandgap (PBG) properties are calculated by the plane wave expansion method (PWM), and the results agree well with the measured transmission spectrum. Furthermore, the modal field patterns are measured at ∼1300 and 1520 nm, respectively. The light is confined to the core at ∼1300  nm and lost in the cladding at ∼1520  nm, which match well with the calculated modal field intensities.

Single-mode ytterbium-doped large-mode-area photonic bandgap rod fiber amplifier

DEFF Research Database (Denmark)

Alkeskjold, Thomas Tanggaard; Scolari, Lara; Broeng, Jes

2011-01-01

bandgap structure. The structure allows resonant coupling of higher-order modes from the core and acts as a spatially Distributed Mode Filter (DMF). With this approach, we demonstrate passive SM performance in an only ~50cm long and straight ytterbium-doped rod fiber. The amplifier has a mode field...... diameter of ∼59Lim at 1064nm and exhibits a pump absorption of 27dB/m at 976nm. © 2011 Optical Society of America....

Reduced thermal sensitivity of hybrid air-core photonic band-gap fiber ring resonator

Science.gov (United States)

Feng, Li-shuang; Wang, Kai; Jiao, Hong-chen; Wang, Jun-jie; Liu, Dan-ni; Yang, Zhao-hua

2018-01-01

A novel hybrid air-core photonic band-gap fiber (PBF) ring resonator with twin 90° polarization-axis rotated splices is proposed and demonstrated. Frist, we measure the temperature dependent birefringence coefficient of air-core PBF and Panda fiber. Experimental results show that the relative temperature dependent birefringence coefficient of air-core PBF is 1.42×10-8/°C, which is typically 16 times less than that of Panda fiber. Then, we extract the geometry profile of air-core PBF from scanning electron microscope (SEM) images. Numerical modal is built to distinguish the fast axis and slow axis in the fiber. By precisely setting the length difference in air-core PBF and Panda fiber between two 90° polarization-axis rotated splicing points, the hybrid air-core PBF ring resonator is constructed, and the finesse of the resonator is 8.4. Environmental birefringence variation induced by temperature change can be well compensated, and experimental results show an 18-fold reduction in thermal sensitivity, compared with resonator with twin 0° polarization-axis rotated splices.

Polarizing Ytterbium-Doped all-Solid Photonic Bandgap Fiber with 1150 micrometers2 Effective Mode Area

Science.gov (United States)

2015-02-11

RESPONSIBLE PERSON 19b. TELEPHONE NUMBER Liang Dong Fanting Kong,, Guancheng Gu,, Thomas W. Hawkins ,, Joshua Parsons, Maxwell Jones,, Christopher...Dunn,, Monica T. Kalichevsky-Dong,, Benjamin Pulford,, Iyad Dajani,, Kunimasa Saitoh,, Stephen P. Palese,, Eric Cheung,, Liang Dong c. THIS PAGE The...ytterbium-doped all-solid photonic bandgap fiber with ~1150µm2 effective mode area Fanting Kong,1,* Guancheng Gu,1 Thomas W. Hawkins ,1 Joshua Parsons

Experimental investigation of backreflection at air-core photonic bandgap fiber terminations

Science.gov (United States)

Xu, Xiaobin; Yan, Ming; Wu, Chunxiao; Song, Ningfang; Zhang, Chunxi

2017-07-01

Backreflection from the termination of air-core photonic bandgap fibers (PBFs) is experimentally investigated based on a range-extended Mach-Zehnder and Michelson hybrid (M2) interferometer. For primary waves generated by the fundamental modes, the reflectivity is about -90 dB; for secondary waves caused by other modes, the reflectivity is less than -80 dB when compared to the intensity of the primary wave and -20 to -50 dB when compared to their own incident intensity. To suppress the reflection, 3-centimeter PBF at the end is filled with alcohol through the capillary effect, and this proposed method is shown to be much more convenient and effective than the conventional angle cleaving method.

Photolithography of thick photoresist coating for electrically controlled liquid crystal photonic bandgap fibre devices

DEFF Research Database (Denmark)

Wei, Lei; Khomtchenko, Elena; Alkeskjold, Thomas Tanggaard

2009-01-01

Thick photoresist coating for electrode patterning in an anisotropically etched V-groove is investigated for electrically controlled liquid crystal photonic bandgap fibre devices. The photoresist step coverage at the convex corners is compared with and without soft baking after photoresist spin...

Liquid crystal parameter analysis for tunable photonic bandgap fiber devices

DEFF Research Database (Denmark)

Weirich, Johannes; Lægsgaard, Jesper; Wei, Lei

2010-01-01

We investigate the tunability of splay-aligned liquid crystals for the use in solid core photonic crystal fibers. Finite element simulations are used to obtain the alignment of the liquid crystals subject to an external electric field. By means of the liquid crystal director field the optical...

Wide Bandgap Extrinsic Photoconductive Switches

Energy Technology Data Exchange (ETDEWEB)

Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

2012-01-20

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

Photometric device using optical fibers

International Nuclear Information System (INIS)

Boisde, Gilbert; Perez, J.-J.

1981-02-01

Remote measurements in radioactive environment are now possible with optical fibers. Measurement instruments developed by CEA are constitued of: - an optical probe (5 mm to 1 meter optical path length), - a photometric measurement device, - optical fiber links. 'TELEPHOT' is a photometric device for industrial installations. It is uses interferentiel filters for 2 to 5 simultaneous wave lengths. 'CRUDMETER' measures the muddiness of water. It can be equipped with a high sensitivity cell of 50 cm optical path length tested up to 250 bars. Coupling a double beam spectrophotometer to a remote optical probe, up to 1 meter optical path length, is carried out by means of an optical device using optical fibers links, eventually several hundred meter long. For these equipments special step index large core fibers, 1 to 1.5 mm in diameter, have been developed as well connectors. For industrial control and research these instruments offer new prospect thanks to optical fibers use [fr

Compression of realistic laser pulses in hollow-core photonic bandgap fibers

DEFF Research Database (Denmark)

Lægsgaard, Jesper; Roberts, John

2009-01-01

Dispersive compression of chirped few-picosecond pulses at the microjoule level in a hollow-core photonic bandgap fiber is studied numerically. The performance of ideal parabolic input pulses is compared to pulses from a narrowband picosecond oscillator broadened by self-phase modulation during...... amplification. It is shown that the parabolic pulses are superior for compression of high-quality femtosecond pulses up to the few-megawatts level. With peak powers of 5-10 MW or higher, there is no significant difference in power scaling and pulse quality between the two pulse types for comparable values...... of power, duration, and bandwidth. The same conclusion is found for the peak power and energy of solitons formed beyond the point of maximal compression. Long-pass filtering of these solitons is shown to be a promising route to clean solitonlike output pulses with peak powers of several MW....

Densely Aligned Graphene Nanoribbon Arrays and Bandgap Engineering

Energy Technology Data Exchange (ETDEWEB)

Su, Justin [Stanford Univ., CA (United States); Chen, Changxin [Stanford Univ., CA (United States); Gong, Ming [Stanford Univ., CA (United States); Kenney, Michael [Stanford Univ., CA (United States)

2017-01-04

Graphene has attracted great interest for future electronics due to its high mobility and high thermal conductivity. However, a two-dimensional graphene sheet behaves like a metal, lacking a bandgap needed for the key devices components such as field effect transistors (FETs) in digital electronics. It has been shown that, partly due to quantum confinement, graphene nanoribbons (GNRs) with ~2 nm width can open up sufficient bandgaps and evolve into semiconductors to exhibit high on/off ratios useful for FETs. However, a challenging problem has been that, such ultra-narrow GNRs (~2 nm) are difficult to fabricate, especially for GNRs with smooth edges throughout the ribbon length. Despite high on/off ratios, these GNRs show very low mobility and low on-state conductance due to dominant scattering effects by imperfections and disorders at the edges. Wider GNRs (>5 nm) show higher mobility, higher conductance but smaller bandgaps and low on/off ratios undesirable for FET applications. It is highly desirable to open up bandgaps in graphene or increase the bandgaps in wide GNRs to afford graphene based semiconductors for high performance (high on-state current and high on/off ratio) electronics. Large scale ordering and dense packing of such GNRs in parallel are also needed for device integration but have also been challenging thus far. It has been shown theoretically that uniaxial strains can be applied to a GNR to engineer its bandgap. The underlying physics is that under uniaxial strain, the Dirac point moves due to stretched C-C bonds, leading to an increase in the bandgap of armchair GNRs by up to 50% of its original bandgap (i.e. bandgap at zero strain). For zigzag GNRs, due to the existence of the edge states, changes of bandgap are smaller under uniaxial strain and can be increased by ~30%. This work proposes a novel approach to the fabrication of densely aligned graphene nanoribbons with highly smooth edges afforded by anisotropic etching and uniaxial strain for

Bandgap Engineering of 1300 nm Quantum Dots/Quantum Well Nanostructures Based Devices

KAUST Repository

Alhashim, Hala H.

2016-05-29

The main objectives of this thesis are to develop viable process and/or device technologies for bandgap tuning of 1300-nm InGaAs/GaAs quantum-dot (QD) laser structures, and broad linewidth 1300-nm InGaAsP/InP quantum well (QW) superluminescent diode structures. The high performance bandgap-engineered QD laser structures were achieved by employing quantum-dot intermixing (QDI) based on impurity free vacancy diffusion (IFVD) technique for eventual seamless active-passive integration, and bandgap-tuned lasers. QDI using various dielectric-capping materials, such as HfO2, SrTiO3, TiO2, Al2O3 and ZnO, etc, were experimented in which the resultant emission wavelength can be blueshifted to ∼ 1100 nm ─ 1200 nm range depending on process conditions. The significant results extracted from the PL characterization were used to perform an extensive laser characterization. The InAs/GaAs quantum-dot lasers with QDs transition energies were blueshifted by ~185 nm, and lasing around ~1070 – 1190 nm was achieved. Furthermore, from the spectral analysis, a simultaneous five-state lasing in the InAs/InGaAs intermixed QD laser was experimentally demonstrated for the first time in the very important wavelength range from 1030 to 1125 nm. The QDI methodology enabled the facile formation of a plethora of devices with various emission wavelengths suitable for a wide range of applications in the infrared. In addition, the wavelength range achieved is also applicable for coherent light generation in the green – yellow – orange visible wavelength band via frequency doubling, which is a cost-effective way of producing compact devices for pico-projectors, semiconductor laser based solid state lighting, etc. [1, 2] In QW-based superluminescent diode, the problem statement lies on achieving a flat-top and ultra-wide emission bandwidth. The approach was to design an inhomogeneous active region with a comparable simultaneous emission from different transition states in the QW stacks, in

Investigation on the Effect of Underwater Acoustic Pressure on the Fundamental Mode of Hollow-Core Photonic Bandgap Fibers

Directory of Open Access Journals (Sweden)

Adel Abdallah

2015-01-01

Full Text Available Recently, microstructured optical fibers have become the subject of extensive research as they can be employed in many civilian and military applications. One of the recent areas of research is to enhance the normalized responsivity (NR to acoustic pressure of the optical fiber hydrophones by replacing the conventional single mode fibers (SMFs with hollow-core photonic bandgap fibers (HC-PBFs. However, this needs further investigation. In order to fully understand the feasibility of using HC-PBFs as acoustic pressure sensors and in underwater communication systems, it is important to study their modal properties in this environment. In this paper, the finite element solver (FES COMSOL Multiphysics is used to study the effect of underwater acoustic pressure on the effective refractive index neff of the fundamental mode and discuss its contribution to NR. Besides, we investigate, for the first time to our knowledge, the effect of underwater acoustic pressure on the effective area Aeff and the numerical aperture (NA of the HC-PBF.

Fabrication of Optical Fiber Devices

Science.gov (United States)

Andres, Miguel V.

In this paper we present the main research activities of the Laboratorio de Fibras Opticas del Instituto de Ciencia de los Materiales de la Universidad de Valencia. We show some of the main results obtained for devices based on tapered fibers, fiber Bragg gratings, acousto-optic effects and photonic crystal fibers.

Direct Bandgap Group IV Materials

Science.gov (United States)

2016-01-21

AFRL-AFOSR-JP-TR-2017-0049 Direct Bandgap group IV Materials Hung Hsiang Cheng NATIONAL TAIWAN UNIVERSITY Final Report 01/21/2016 DISTRIBUTION A...NAME(S) AND ADDRESS(ES) NATIONAL TAIWAN UNIVERSITY 1 ROOSEVELT RD. SEC. 4 TAIPEI CITY, 10617 TW 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING...14. ABSTRACT Direct bandgap group IV materials have been long sought for in both academia and industry for the implementation of photonic devices

Simulation of push-pull inverter using wide bandgap devices

Science.gov (United States)

Al-badri, Mustafa; Matin, Mohammed A.

2016-09-01

This paper discusses the use of wide bandgap devices (SiC-MOSFET) in the design of a push-pull inverter which provides inexpensive low power dc-ac inverters. The parameters used were 1200V SiC MOSFET(C2M0040120D) made by power company ROHM. This modeling was created using parameters that were provided from a device datasheet. The spice model is provided by this company to study the effect of adding this component on push-pull inverter ordinary circuit and compared results between SiC MOSFET and silicon MOSFET (IRFP260M). The results focused on Vout and Vmos stability as well as on output power and MOSFET power loss because it is a very crucial aspect on DC-AC inverter design. These results are done using the National Instrument simulation program (Multisim 14). It was found that power loss is better in the 12 and 15 vdc inverter. The Vout in the SIC MOSFET circuit shows more stability in the high current low resistance load in comparison to the Silicon MOSFET circuit and this will improve the overall performance of the circuit.

Effect of single point defects on the confinement losses of air-guiding photonic bandgap fibers

Institute of Scientific and Technical Information of China (English)

Shi Wei-Hua; Zhao Yan; Qian Li-Guo; Chen He-Ming

2012-01-01

The confinement losses in air-guiding photonic bandgap fibers (PBGFs) with air hole missing are studied with the full-vector finite-element method.It is confirmed that there are two loss peaks (1.555 and 1.598 μm) if there is a hole missing in the cladding far from the core.The closer to the core the hole missing is,the larger the confinement losses are,and even no mode could propagate in the core.The main power of the fundamental mode leaks from the core to the cladding defect.The quality of PBGFs can be improved through controlling the number and position of defects.

Frequency tunability of solid-core photonic crystal fibers filled with nanoparticle-doped liquid crystals

OpenAIRE

Scolari, Lara; Gauza, Sebastian; Xianyu, Haiqing; Zhai, Lei; Eskildsen, Lars; Alkeskjold, Thomas Tanggaard; Wu, Shin-Tson; Bjarklev, Anders Overgaard

2009-01-01

We infiltrate liquid crystals doped with BaTiO3 nanoparticles in a photonic crystal fiber and compare the measured transmission spectrum with the one achieved without dopant. New interesting features, such as frequency modulation response of the device and a transmission spectrum with tunable attenuation on the short wavelength side of the widest bandgap, suggest a potential application of this device as a tunable all-in-fiber gain equalization filter with an adjustable slope. The tunability ...

Single-graded CIGS with narrow bandgap for tandem solar cells.

Science.gov (United States)

Feurer, Thomas; Bissig, Benjamin; Weiss, Thomas P; Carron, Romain; Avancini, Enrico; Löckinger, Johannes; Buecheler, Stephan; Tiwari, Ayodhya N

2018-01-01

Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se 2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe 2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

Science.gov (United States)

Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

2002-01-01

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

Optical fiber end-facet polymer suspended-mirror devices

Science.gov (United States)

Yao, Mian; Wu, Jushuai; Zhang, A. Ping; Tam, Hwa-Yaw; Wai, P. K. A.

2017-04-01

This paper presents a novel optical fiber device based on a polymer suspended mirror on the end facet of an optical fiber. With an own-developed optical 3D micro-printing technology, SU-8 suspended-mirror devices (SMDs) were successfully fabricated on the top of a standard single-mode optical fiber. Optical reflection spectra of the fabricated SU- 8 SMDs were measured and compared with theoretical analysis. The proposed technology paves a way towards 3D microengineering of the small end-facet of optical fibers to develop novel fiber-optic sensors.

Review of wide band-gap semiconductors technology

Directory of Open Access Journals (Sweden)

Jin Haiwei

2016-01-01

Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

Mechanical devices for aligning optical fibers using elastic metal-deformation techniques

NARCIS (Netherlands)

van Zantvoort, J.H.C.; Plukker, S.G.L.; Kuindersma, P.I.; Mekonnen, K.A.; de Waardt, H.

2016-01-01

We designed and realized two different mechanical devices for aligning standard lensed telecom fibers to indium-phosphide-based photonic integrated circuits (PICs). The first device (Device A) can align one fiber in three degrees of freedom, while the second device (Device B) can align two fiber

Contact and Bandgap Engineering in Two Dimensional Crystal

Science.gov (United States)

Chu, Tao

At the heart of semiconductor research, bandgap is one of the key parameters for materials and determine their applications in modern technologies. For traditional bulk semiconductors, the bandgap is determined by the chemical composition and specific arrangement of the crystal lattices, and usually invariant during the device operation. Nevertheless, it is highly desirable for many optoelectronic and electronic applications to have materials with continuously tunable bandgap available. In the past decade, 2D layered materials including graphene and transition metal dichalcogenides (TMDs) have sparked interest in the scientific community, owing to their unique material properties and tremendous potential in various applications. Among many newly discovered properties that are non-existent in bulk materials, the strong in-plane bonding and weak van der Waals inter-planar interaction in these 2D layered structures leads to a widely tunable bandgap by electric field. This provides an extra knob to engineer the fundamental material properties and open a new design space for novel device operation. This thesis focuses on this field controlled dynamic bandgap and can be divided into three parts: (1) bilayer graphene is the first known 2D crystal with a bandgap can be continuously tuned by electric field. However, the electrical transport bandgaps is much smaller than both theoretical predictions and extracted bandgaps from optical measurements. In the first part of the thesis, the limiting factors of preventing achieving a large transport bandgap in bilayer graphene are investigated and different strategies to achieve a large transport bandgap are discussed, including the vertically scaling of gate oxide and patterning channel into ribbon structure. With a record large transport bandgap of ~200meV, a dual-gated semiconducting bilayer graphene P/N junction with extremely scaled gap of 20nm in-between is fabricated. A tunable local maxima feature, associated with 1D v

Fiber-shaped energy harvesting and storage devices

CERN Document Server

Peng, Huisheng

2015-01-01

This comprehensive book covers flexible fiber-shaped devices in the area of energy conversion and storage. The first part of the book introduces recently developed materials, particularly, various nanomaterials and composite materials based on nanostructured carbon such as carbon nanotubes and graphene, metals and polymers for the construction of fiber electrodes. The second part of the book focuses on two typical twisted and coaxial architectures of fiber-shaped devices for energy conversion and storage. The emphasis is placed on dye-sensitized solar cells, polymer solar cells, lithium-ion b

Electrochemical fabrication and electronic behavior of polypyrrole nano-fiber array devices

International Nuclear Information System (INIS)

Liu Ling; Zhao Yaomin; Jia Nengqin; Zhou Qin; Zhao Chongjun; Yan Manming; Jiang Zhiyu

2006-01-01

Electrochemically active Polypyrrole (PPy) nano-fiber array device was fabricated via electrochemical deposition method using aluminum anodic oxide (AAO) membrane as template. After alkaline treatment electrochemically active PPy nano-fiber lost electrochemical activity, and became electrochemically inactive PPy. The electronic properties of PPy nano-fiber array devices were measured by means of a simple method. It was found that for an indium-tin oxide/electrochemically inactive PPy nano-fiber device, the conductivity of nano-fiber increased with the increase of voltage applied on the two terminals of nano-fiber. The electrochemical inactive PPy nano-fiber might be used as a nano-fiber switching diode. Both Au/electrochemically active PPy and Au/electrochemically inactive PPy nano-fiber devices demonstrate rectifying behavior, and might have been used for further application as nano-rectifiers

Electrochemical fabrication and electronic behavior of polypyrrole nano-fiber array devices

Energy Technology Data Exchange (ETDEWEB)

Ling, Liu [Department of Chemistry, and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China); Yaomin, Zhao [Department of Chemistry, and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China); Nengqin, Jia [Department of Chemistry, and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China); Qin, Zhou [Department of Chemistry, and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China); Chongjun, Zhao [Photon Craft Project, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences and Japan Science and Technology Agency, Shanghai 201800 (China); Manming, Yan [Department of Chemistry, and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China); Zhiyu, Jiang [Department of Chemistry, and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China)

2006-05-01

Electrochemically active Polypyrrole (PPy) nano-fiber array device was fabricated via electrochemical deposition method using aluminum anodic oxide (AAO) membrane as template. After alkaline treatment electrochemically active PPy nano-fiber lost electrochemical activity, and became electrochemically inactive PPy. The electronic properties of PPy nano-fiber array devices were measured by means of a simple method. It was found that for an indium-tin oxide/electrochemically inactive PPy nano-fiber device, the conductivity of nano-fiber increased with the increase of voltage applied on the two terminals of nano-fiber. The electrochemical inactive PPy nano-fiber might be used as a nano-fiber switching diode. Both Au/electrochemically active PPy and Au/electrochemically inactive PPy nano-fiber devices demonstrate rectifying behavior, and might have been used for further application as nano-rectifiers.

Efficient CsF interlayer for high and low bandgap polymer solar cell

Science.gov (United States)

Mitul, Abu Farzan; Sarker, Jith; Adhikari, Nirmal; Mohammad, Lal; Wang, Qi; Khatiwada, Devendra; Qiao, Qiquan

2018-02-01

Low bandgap polymer solar cells have a great deal of importance in flexible photovoltaic market to absorb sun light more efficiently. Efficient wide bandgap solar cells are always available in nature to absorb visible photons. The development and incorporation of infrared photovoltaics (IR PV) with wide bandgap solar cells can improve overall solar device performance. Here, we have developed an efficient low bandgap polymer solar cell with CsF as interfacial layer in regular structure. Polymer solar cell devices with CsF shows enhanced performance than Ca as interfacial layer. The power conversion efficiency of 4.5% has been obtained for PDPP3T based polymer solar cell with CsF as interlayer. Finally, an optimal thickness with CsF as interfacial layer has been found to improve the efficiency in low bandgap polymer solar cells.

An integrated fiber and stone basket device for use in Thulium fiber laser lithotripsy

Science.gov (United States)

Wilson, Christopher R.; Hutchens, Thomas C.; Hardy, Luke A.; Irby, Pierce B.; Fried, Nathaniel M.

2014-03-01

The Thulium fiber laser (TFL) is being explored as an alternative laser lithotripter to the Holmium:YAG laser. The TFL's superior near-single mode beam profile enables higher power transmission through smaller fibers with reduced proximal fiber tip damage. Recent studies have also reported that attaching hollow steel tubing to the distal fiber tip decreases fiber degradation and burn-back without compromising stone ablation rates. However, significant stone retropulsion was observed, which increased with pulse rate. In this study, the hollow steel tip fiber design was integrated with a stone basket to minimize stone retropulsion during ablation. A device was constructed consisting of a 100-μm-core, 140-μm-OD silica fiber outfitted with 5-mm-long stainless steel tubing at the distal tip, and integrated with a 1.3-Fr (0.433-mm-OD) disposable nitinol wire basket, to form an overall 1.9-Fr (0.633-mm- OD) integrated device. This compact design may provide several potential advantages including increased flexibility, higher saline irrigation rates through the ureteroscope working channel, and reduced fiber tip degradation compared to separate fiber and stone basket manipulation. TFL pulse energy of 31.5 mJ with 500 μs pulse duration and pulse rate of 500 Hz was delivered through the integrated fiber/basket device in contact with human uric acid stones, ex vivo. TFL stone ablation rates measured 1.5 +/- 0.2 mg/s, comparable to 1.7 +/- 0.3 mg/s (P > 0.05) using standard bare fiber tips separately with a stone basket. With further development, this device may be useful for minimizing stone retropulsion, thus enabling more efficient TFL lithotripsy at higher pulse rates.

Tailoring Nd3+ emission spectrum by a neodymium-doped tellurite all-solid photonic bandgap fiber

Science.gov (United States)

Tong, Hoang Tuan; Demichi, Daisuke; Suzuki, Takenobu; Ohishi, Yasutake

2018-02-01

A tellurite all-solid photonic bandgap fiber (ASPBF) whose cladding consists of 60 high-index rods arranged periodically around a central core was successfully fabricated. The diameter of high-index rod was about 5.0 μm and the distance between the center of two adjacent high-index rods was approximately 8.0 μm. The high-index rod was made of the TeO2-Li2O-WO3-MoO3-Nb2O5 (TLWMN) glass, the cladding was made of the TeO2-ZnO-Na2O-La2O3 (TZNL) glass as the background glass material and the central core was made of TZNL glass doped with 0.5 wt% of Nd2O3. A supercontinuum light from 0.6 to 2.4 μm was coupled into the core of fiber which is 2.2 cm long to measure its transmission spectrum. High transmission bands were obtained in the vicinity of 0.75 and 1.3 μm but the transmission was suppressed in the wavelength range from 1.0 to 1.06 μm. When a titanium∶Sapphire laser source at 0.75 μm was used, the emission spectrum was obtained with two peaks at 1.06 and 1.33 μm which are attributed to the 4F3/2->4I11/2 and 4F3/2->4I13/2 transitions of Nd3+ ion, respectively. The intensities of those emission peaks were compared with those obtained from a bulk glass having the same doping concentration of Nd3+. The results showed that by using tellurite ASPBF, the intensity of the 1.06-μm emission was suppressed by one-twelfth but the intensity of the 1.33-μm emission was maintained. This feature is very advantageous to filter out the 1.06-μm emission of Nd3+ ion in order to realize practical amplifier devices at 1.3 μm.

Device for verification of seals by optical fibers

International Nuclear Information System (INIS)

Neuilly, M.; Guitaud, M.H.; Dufour, J.L.

1993-01-01

The seal is built around an optical fiber with a verification device. This device is made of a lighting source and photographic means supported by a rotating assembly which allow to take an image of each optical fiber end. These images are compared with reference images taken just after the sealing. (A.B.). 5 refs., 6 figs

Photonic bandgap fibers: theory and experiments

DEFF Research Database (Denmark)

Bjarklev, Anders Overgaard; Broeng, Jes; Libori, Stig E. Barkou

2000-01-01

We will in this presentation address, show how the fiber cladding structure influences the resulting waveguiding properties. The core may be introduced by breaking the periodicity of the air holes at the center of the fiber. It has been demonstrated experimentally that this makes it possible...

Design and performance study of a DC-DC flyback converter based on wide bandgap power devices for photovoltaic applications

Science.gov (United States)

Alharbi, Salah S.; Alharbi, Saleh S.; Al-bayati, Ali M. S.; Matin, Mohammad

2017-08-01

This paper presents a high-performance dc-dc flyback converter design based on wide bandgap (WBG) semiconductor devices for photovoltaic (PV) applications. Two different power devices, a gallium nitride (GaN)-transistor and a silicon (Si)-MOSFET, are implemented individually in the flyback converter to examine their impact on converter performance. The total power loss of the converter with different power devices is analyzed for various switching frequencies. Converter efficiency is evaluated at different switching frequencies, input voltages, and output power levels. The results reveal that the converter with the GaN-transistor has lower total power loss and better efficiency compared to the converter with the conventional Si-MOSFET.

Photonic crystal fibers

DEFF Research Database (Denmark)

Lægsgaard, Jesper; Hansen, K P; Nielsen, M D

2003-01-01

Photonic crystal fibers having a complex microstructure in the transverse plane constitute a new and promising class of optical fibers. Such fibers can either guide light through total internal reflection or the photonic bandgap effect, In this paper, we review the different types and applications...... of photonic crystal fibers with particular emphasis on recent advances in the field....

Modeling fiber Bragg grating device networks in photomechanical polymer optical fibers

Science.gov (United States)

Lanska, Joseph T.; Kuzyk, Mark G.; Sullivan, Dennis M.

2015-09-01

We report on the modeling of fiber Bragg grating (FBG) networks in poly(methyl methacrylate) (PMMA) polymer fibers doped with azo dyes. Our target is the development of Photomechanical Optical Devices (PODs), comprised of two FBGs in series, separated by a Fabry-Perot cavity of photomechanical material. PODs exhibit photomechanical multi-stability, with the capacity to access multiple length states for a fixed input intensity when a mechanical shock is applied. Using finite-difference time-domain (FDTD) numerical methods, we modeled the photomechanical response of both Fabry-Perot and Bragg-type PODs in a single polymer optical fiber. The polymer fiber was modeled as an instantaneous Kerr-type nonlinear χ(3) material. Our model correctly predicts the essential optical features of FBGs as well as the photomechanical multi-stability of nonlinear Fabry-Perot cavity-based PODs. Networks of PODs may provide a framework for smart shape-shifting materials and fast optical computation where the decision process is distributed over the entire network. In addition, a POD can act as memory, and its response can depend on input history. Our models inform and will accelerate targeted development of novel Bragg grating-based polymer fiber device networks for a variety of applications in optical computing and smart materials.

Resonant filtered fiber amplifiers

DEFF Research Database (Denmark)

Alkeskjold, Thomas Tanggaard; Laurila, Marko; Olausson, Christina Bjarnal Thulin

2013-01-01

In this paper we present our recent result on utilizing resonant/bandgap fiber designs to achieve high performance ytterbium doped fiber amplifers for achieving diffraction limited beam quality in large mode area fibers, robust bending performance and gain shaping for long wavelength operation...

Monolithic femtosecond Yb-fiber laser with photonic crystal fibers

DEFF Research Database (Denmark)

Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

We demonstrate a monolithic stable SESAM-modelocked self-starting Yb-fiber laser. A novel PM all-solid photonic bandgap fiber is used for intra-cavity of dispersion management. The ex-cavity final pulse compression is performed in a spliced-on PM hollow-core photonic crystal fiber. The laser...... directly delivers 9 nJ pulses of 275 fs duration with pulse repetition of 26.7MHz....

Phosphorene nanoribbons: Passivation effect on bandgap and effective mass

International Nuclear Information System (INIS)

Xu, Li-Chun; Song, Xian-Jiang; Yang, Zhi; Cao, Ling; Liu, Rui-Ping; Li, Xiu-Yan

2015-01-01

Highlights: • Hydrogenation and fluorination can passivate the metallic edge states of zPNRs. • The bandgap of each type of zPNRs decreases as the ribbon's width increases duo to the quantum confinement effect. • Two local configurations of passivated atoms can coexist in nanoribbons and affect the bandgap of narrow nanoribbons. • New passivation configuration can effectively reduce the effective mass of electrons. - Abstract: The edge passivation effect of phosphorene nanoribbons is systematically investigated using density functional theory. Hydrogen and fluorine atoms passivate the metallic edge states of nanoribbons and can open a bandgap up to 2.25 eV. The two configurations of passivated atoms can exist at two edges and affect the bandgap of narrow nanoribbons. The bandgap of each type of zPNRs decreases as the ribbon's width increases, which can be attributed to the quantum confinement effect. The new configuration, named C b , can effectively reduce the effective mass of electrons, which benefits the future design of phosphorene-based electronic devices

Phosphorene nanoribbons: Passivation effect on bandgap and effective mass

Energy Technology Data Exchange (ETDEWEB)

Xu, Li-Chun, E-mail: xulichun@tyut.edu.cn; Song, Xian-Jiang; Yang, Zhi; Cao, Ling; Liu, Rui-Ping; Li, Xiu-Yan

2015-01-01

Highlights: • Hydrogenation and fluorination can passivate the metallic edge states of zPNRs. • The bandgap of each type of zPNRs decreases as the ribbon's width increases duo to the quantum confinement effect. • Two local configurations of passivated atoms can coexist in nanoribbons and affect the bandgap of narrow nanoribbons. • New passivation configuration can effectively reduce the effective mass of electrons. - Abstract: The edge passivation effect of phosphorene nanoribbons is systematically investigated using density functional theory. Hydrogen and fluorine atoms passivate the metallic edge states of nanoribbons and can open a bandgap up to 2.25 eV. The two configurations of passivated atoms can exist at two edges and affect the bandgap of narrow nanoribbons. The bandgap of each type of zPNRs decreases as the ribbon's width increases, which can be attributed to the quantum confinement effect. The new configuration, named C{sub b}, can effectively reduce the effective mass of electrons, which benefits the future design of phosphorene-based electronic devices.

Stability and bandgaps of layered perovskites for one- and two-photon water splitting

DEFF Research Database (Denmark)

Castelli, Ivano Eligio; García Lastra, Juan Maria; Hüser, Falco

2013-01-01

in the Ruddlesden–Popper phase of the layered perovskite structure. Based on screening criteria for the stability, bandgaps and band edge positions, we suggest 20 new materials for the light harvesting photo-electrode of a one-photon water splitting device and 5 anode materials for a two-photon device with silicon...... as photo-cathode. In addition, we explore a simple rule relating the bandgap of the perovskite to the number of octahedra in the layered structure and the B-metal ion. Finally, the quality of the GLLB-SC potential used to obtain the bandgaps, including the derivative discontinuity, is validated against G0W......0@LDA gaps for 20 previously identified oxides and oxynitrides in the cubic perovskite structure....

Lab-on-fiber electrophoretic trace mixture separating and detecting an optofluidic device based on a microstructured optical fiber.

Science.gov (United States)

Yang, Xinghua; Guo, Xiaohui; Li, Song; Kong, Depeng; Liu, Zhihai; Yang, Jun; Yuan, Libo

2016-04-15

We report an in-fiber integrated electrophoretic trace mixture separating and detecting an optofluidic optical fiber sensor based on a specially designed optical fiber. In this design, rapid in situ separation and simultaneous detection of mixed analytes can be realized under electro-osmotic flow in the microstructured optical fiber. To visually display the in-fiber separating and detecting process, two common fluorescent indicators are adopted as the optofluidic analytes in the optical fiber. Results show that a trace amount of the mixture (0.15 μL) can be completely separated within 3.5 min under a high voltage of 5 kV. Simultaneously, the distributed information of the separated analytes in the optical fiber can be clearly obtained by scanning along the optical fiber using a 355 nm laser. The emission from the analytes can be efficiently coupled into the inner core and guides to the remote end of the optical fiber. In addition, the thin cladding around the inner core in the optical fiber can prevent the fluorescent cross talk between the analytes in this design. Compared to previous optical fiber optofluidic devices, this device first realizes simultaneously separating treatment and the detection of the mixed samples in an optical fiber. Significantly, such an in-fiber integrated separating and detecting optofluidic device can find wide applications in various analysis fields involves mixed samples, such as biology, chemistry, and environment.

An in-fiber integrated optofluidic device based on an optical fiber with an inner core.

Science.gov (United States)

Yang, Xinghua; Yuan, Tingting; Teng, Pingping; Kong, Depeng; Liu, Chunlan; Li, Entao; Zhao, Enming; Tong, Chengguo; Yuan, Libo

2014-06-21

A new kind of optofluidic in-fiber integrated device based on a specially designed hollow optical fiber with an inner core is designed. The inlets and outlets are built by etching the surface of the optical fiber without damaging the inner core. A reaction region between the end of the fiber and a solid point obtained after melting is constructed. By injecting samples into the fiber, the liquids can form steady microflows and react in the region. Simultaneously, the emission from the chemiluminescence reaction can be detected from the remote end of the optical fiber through evanescent field coupling. The concentration of ascorbic acid (AA or vitamin C, Vc) is determined by the emission intensity of the reaction of Vc, H2O2, luminol, and K3Fe(CN)6 in the optical fiber. A linear sensing range of 0.1-3.0 mmol L(-1) for Vc is obtained. The emission intensity can be determined within 2 s at a total flow rate of 150 μL min(-1). Significantly, this work presents information for the in-fiber integrated optofluidic devices without spatial optical coupling.

Tuning the hybridization bandgap by meta-molecules with in-unit interaction

Energy Technology Data Exchange (ETDEWEB)

Chen, Yongqiang; Li, Yunhui, E-mail: liyunhui@tongji.edu.cn; Wu, Qian; Jiang, Haitao; Zhang, Yewen; Chen, Hong [Key Laboratory of Advanced Micro-Structured Materials, Ministry of Education, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

2015-09-07

In this paper, we demonstrate that the hybridization bandgap (HBG) can be tuned conveniently by deep subwavelength meta-molecules with in-unit interaction. Spontaneous-emission-cancellation-like (SEC-like) effect is realized in a meta-molecule by introducing the destructive interference of two detuned meta-atoms. The meta-atoms consisting of subwavelength zero-index-metamaterial-based resonators are side-coupled to a microstrip. Compared to conventional HBG configurations, the presence of in-unit interaction between meta-atoms provides more flexibility in tuning the bandgap properties, keeping the device volume almost unchanged. Both numerical simulations and microwave experiments confirm that the width, depth, and spectrum shape of HBG can be tuned by simply introducing SEC-like interaction into the meta-molecule. Due to these features, our design may be promising to be applied in microwave or optics communications systems with strict limitation of device volume and flexible bandgap properties.

Recent Advances in Wide-Bandgap Photovoltaic Polymers.

Science.gov (United States)

Cai, Yunhao; Huo, Lijun; Sun, Yanming

2017-06-01

The past decade has witnessed significant advances in the field of organic solar cells (OSCs). Ongoing improvements in the power conversion efficiency of OSCs have been achieved, which were mainly attributed to the design and synthesis of novel conjugated polymers with different architectures and functional moieties. Among various conjugated polymers, the development of wide-bandgap (WBG) polymers has received less attention than that of low-bandgap and medium-bandgap polymers. Here, we briefly summarize recent advances in WBG polymers and their applications in organic photovoltaic (PV) devices, such as tandem, ternary, and non-fullerene solar cells. Addtionally, we also dissuss the application of high open-circuit voltage tandem solar cells in PV-driven electrochemical water dissociation. We mainly focus on the molecular design strategies, the structure-property correlations, and the photovoltaic performance of these WBG polymers. Finally, we extract empirical regularities and provide invigorating perspectives on the future development of WBG photovoltaic materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mach-Zehnder atom interferometer inside an optical fiber

Science.gov (United States)

Xin, Mingjie; Leong, Wuiseng; Chen, Zilong; Lan, Shau-Yu

2017-04-01

Precision measurement with light-pulse grating atom interferometry in free space have been used in the study of fundamental physics and applications in inertial sensing. Recent development of photonic band-gap fibers allows light for traveling in hollow region while preserving its fundamental Gaussian mode. The fibers could provide a very promising platform to transfer cold atoms. Optically guided matter waves inside a hollow-core photonic band-gap fiber can mitigate diffraction limit problem and has the potential to bring research in the field of atomic sensing and precision measurement to the next level of compactness and accuracy. Here, we will show our experimental progress towards an atom interferometer in optical fibers. We designed an atom trapping scheme inside a hollow-core photonic band-gap fiber to create an optical guided matter waves system, and studied the coherence properties of Rubidium atoms in this optical guided system. We also demonstrate a Mach-Zehnder atom interferometer in the optical waveguide. This interferometer is promising for precision measurements and designs of mobile atomic sensors.

Advanced specialty fiber designs for high power fiber lasers

Science.gov (United States)

Gu, Guancheng

deviation from circular fiber outer shape may be an effective method to mitigate HOM loss reduction from coherent reflection from fiber outer boundary. In an all-solid photonic bandgap fiber, modes are only guided due to anti-resonance of cladding photonic crystal lattice. This provides strongly mode-dependent guidance, leading to very high differential mode losses, which is essential for lasing far from the gain peak and suppression of stimulated Raman scattering. We will show that all-solid photonic bandgap fibers with effective mode area of 920microm2 can be made with excellent higher order mode suppression. We then demonstrate a 50microm-core-diameter Yb-doped all-solid photonic bandgap fiber laser. 75W output power has been generated with a diffraction-limited beam and an efficiency of 70% relative to the launched pump power. We have also experimentally confirmed that a robust single-mode regime exists near the high frequency edge of the bandgap. It is well known that incorporation of additional smaller cores in the cladding can be used to resonantly out-couple higher-order modes from a main core to suppress higher-order-mode propagation in the main core. Using a novel design with multiple coupled smaller cores in the cladding, we further scaled up the mode area and have successfully demonstrated a single-mode photonic bandgap fiber with record effective mode area of 2650microm2. Detailed numeric studies have been conducted for multiple cladding designs. For the optimal designs, the simulated minimum higher-order-mode losses are well over two orders of magnitudes higher than that of fundamental mode when expressed in dBs. We have also experimentally validated one of the designs. M 2critical for tandem-pumping in >10kW fiber lasers to provide high pump brightness and low thermal loading. Using an ytterbium-doped-phosphosilicate double-clad leakage-channel fiber with 50microm core and 420microm cladding, we have achieved 70% optical-to-optical efficiency at 1018nm. The

Sol-gel processing to form doped sol-gel monoliths inside hollow core optical fiber and sol-gel core fiber devices made thereby

Science.gov (United States)

Shaw, Harry C. (Inventor); Ott, Melanie N. (Inventor); Manuel, Michele V. (Inventor)

2002-01-01

A process of fabricating a fiber device includes providing a hollow core fiber, and forming a sol-gel material inside the hollow core fiber. The hollow core fiber is preferably an optical fiber, and the sol-gel material is doped with a dopant. Devices made in this manner includes a wide variety of sensors.

Robust Control of Wide Bandgap Power Electronics Device Enabled Smart Grid

Science.gov (United States)

Yao, Tong

In recent years, wide bandgap (WBG) devices enable power converters with higher power density and higher efficiency. On the other hand, smart grid technologies are getting mature due to new battery technology and computer technology. In the near future, the two technologies will form the next generation of smart grid enabled by WBG devices. This dissertation deals with two applications: silicon carbide (SiC) device used for medium voltage level interface (7.2 kV to 240 V) and gallium nitride (GaN) device used for low voltage level interface (240 V/120 V). A 20 kW solid state transformer (SST) is designed with 6 kHz switching frequency SiC rectifier. Then three robust control design methods are proposed for each of its smart grid operation modes. In grid connected mode, a new LCL filter design method is proposed considering grid voltage THD, grid current THD and current regulation loop robust stability with respect to the grid impedance change. In grid islanded mode, micro synthesis method combined with variable structure control is used to design a robust controller for grid voltage regulation. For grid emergency mode, multivariable controller designed using Hinfinity synthesis method is proposed for accurate power sharing. Controller-hardware-in-the-loop (CHIL) testbed considering 7-SST system is setup with Real Time Digital Simulator (RTDS). The real TMS320F28335 DSP and Spartan 6 FPGA control board is used to interface a switching model SST in RTDS. And the proposed control methods are tested. For low voltage level application, a 3.3 kW smart grid hardware is built with 3 GaN inverters. The inverters are designed with the GaN device characterized using the proposed multi-function double pulse tester. The inverter is controlled by onboard TMS320F28379D dual core DSP with 200 kHz sampling frequency. Each inverter is tested to process 2.2 kW power with overall efficiency of 96.5 % at room temperature. The smart grid monitor system and fault interrupt devices (FID

Fiber-based wearable electronics: a review of materials, fabrication, devices, and applications.

Science.gov (United States)

Zeng, Wei; Shu, Lin; Li, Qiao; Chen, Song; Wang, Fei; Tao, Xiao-Ming

2014-08-20

Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable. Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions. The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns. However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation. This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products. In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices. Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Experimental Methods for Implementing Graphene Contacts to Finite Bandgap Semiconductors

DEFF Research Database (Denmark)

Meyer-Holdt, Jakob

Present Ph.D. thesis describes my work on implanting graphene as electrical contact to finite bandgap semiconductors. Different transistor architectures, types of graphene and finite bandgap semiconductors have been employed. The device planned from the beginning of my Ph.D. fellowship...... contacts to semiconductor nanowires, more specifically, epitaxially grown InAs nanowires. First, we tried a top down method where CVD graphene was deposited on substrate supported InAs nanowires followed by selective graphene ashing to define graphene electrodes. While electrical contact between...

77 FR 65713 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

Science.gov (United States)

2012-10-30

... Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Institution... certain optoelectronic devices for fiber optic communications, components thereof, and products containing... optoelectronic devices for fiber optic communications, components thereof, and products containing the same that...

Monitoring system of hydraulic lifting device based on the fiber optic sensors

Science.gov (United States)

Fajkus, Marcel; Nedoma, Jan; Novak, Martin; Martinek, Radek; Vanus, Jan; Mec, Pavel; Vasinek, Vladimir

2017-10-01

This article deals with the description of the monitoring system of hydraulic lifting device based on the fiber-optic sensors. For minimize the financial costs of the proposed monitoring system, the power evaluation of measured signal has been chosen. The solution is based on an evaluation of the signal obtained using the single point optic fiber sensors with overlapping reflective spectra. For encapsulation of the sensors was used polydimethylsiloxane (PDMS) polymer. To obtain a information of loading is uses the action of deformation of the lifting device on the pair single point optic fiber sensors mounted on the lifting device of the tested car. According to the proposed algorithm is determined information of pressure with an accuracy of +/- 5 %. Verification of the proposed system was realized on the various types of the tested car with different loading. The original contribution of the paper is to verify the new low-cost system for monitoring the hydraulic lifting device based on the fiber-optic sensors.

CMOS bandgap references and temperature sensors and their applications

NARCIS (Netherlands)

Wang, G.

2005-01-01

Two main parts have been presented in this thesis: device characterization and circuit. In integrated bandgap references and temperature sensors, the IC(VBE, characteristics of bipolar transistors are used to generate the basic signals with high accuracy. To investigate the possibilities to

Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps

Science.gov (United States)

Wanlass, Mark W [Golden, CO; Mascarenhas, Angelo [Lakewood, CO

2012-05-08

Modeling a monolithic, multi-bandgap, tandem, solar photovoltaic converter or thermophotovoltaic converter by constraining the bandgap value for the bottom subcell to no less than a particular value produces an optimum combination of subcell bandgaps that provide theoretical energy conversion efficiencies nearly as good as unconstrained maximum theoretical conversion efficiency models, but which are more conducive to actual fabrication to achieve such conversion efficiencies than unconstrained model optimum bandgap combinations. Achieving such constrained or unconstrained optimum bandgap combinations includes growth of a graded layer transition from larger lattice constant on the parent substrate to a smaller lattice constant to accommodate higher bandgap upper subcells and at least one graded layer that transitions back to a larger lattice constant to accommodate lower bandgap lower subcells and to counter-strain the epistructure to mitigate epistructure bowing.

The applications of carbon nanomaterials in fiber-shaped energy storage devices

Science.gov (United States)

Wu, Jingxia; Hong, Yang; Wang, Bingjie

2018-01-01

As a promising candidate for future demand, fiber-shaped electrochemical energy storage devices, such as supercapacitors and lithium-ion batteries have obtained considerable attention from academy to industry. Carbon nanomaterials, such as carbon nanotube and graphene, have been widely investigated as electrode materials due to their merits of light weight, flexibility and high capacitance. In this review, recent progress of carbon nanomaterials in flexible fiber-shaped energy storage devices has been summarized in accordance with the development of fibrous electrodes, including the diversified electrode preparation, functional and intelligent device structure, and large-scale production of fibrous electrodes or devices. Project supported by the National Natural Science Foundation of China (Nos. 21634003, 21604012).

Development of fiber lasers and devices for coherent Raman scattering microscopy

Science.gov (United States)

Lamb, Erin Stranford

As ultrafast laser technology has found expanding application in machining, spectroscopy, microscopy, surgery, and numerous other areas, the desire for inexpensive and robust laser sources has grown. Until recently, nonlinear effects in fiber systems due to the tight confinement of the light in the core have limited their performance. However, with advances in managing nonlinearity through pulse propagation physics and the use of large core fibers, the performance of fiber lasers can compete with that of their solid-state counterparts. As specific applications, such as coherent Raman scattering microscopy, emerge that stand to benefit from fiber technology, new performance challenges in areas such as laser noise are anticipated. This thesis studies nonlinear pulse propagation in fiber lasers and fiber parametric devices. Applications of dissipative solitons and self-similar pulse propagation to low-repetition rate oscillators that have the potential to simplify short-pulse amplification schemes will be examined. The rest of this thesis focuses on topics relevant to fiber laser development for coherent Raman scattering microscopy sources. Coherent pulse division and recombination inside the laser cavity will be introduced as an energy-scaling mechanism and demonstrated for a fiber soliton laser. The relative intensity noise properties of mode-locked fiber lasers, with a particular emphasis on normal dispersion lasers, will be explored in simulation and experiment. A fiber optical parametric oscillator will be studied in detail for low noise frequency conversion of picosecond pulses, and its utility for coherent Raman imaging will be demonstrated. Spectral compression of femtosecond pulses is used to generate picosecond pulses to pump this device, and this technique provides a route to future noise reduction in the system. Furthermore, this device forms a multimodal source capable of providing the picosecond pulses for coherent Raman scattering microscopy and the

Large Bandgap Semiconductors for Solar Water Splitting

DEFF Research Database (Denmark)

Malizia, Mauro

Photoelectrochemical water splitting represents an eco-friendly technology that could enable the production of hydrogen using water as reactant and solar energy as primary energy source. The exploitation of solar energy for the production of hydrogen would help modern society to reduce the reliance...... on fossil fuels as primary feedstock for hydrogen production and diminish the emission of greenhouse gases in the atmosphere, weakening the global warming phenomenon.The dissertation reports the development of GaP (gallium phosphide) photocathodes as a large bandgap semiconductor for photoelectrochemical...... water splitting devices having tandem design. The increase of the photovoltage produced by GaP under illumination was the main goal of this work. GaP has a bandgap of 2.25 eV and could in theory produce a photovoltage of approximately 1.7 V. Instead, the photovoltage produced by the semiconductor...

Ultrasensitive tunability of the direct bandgap of 2D InSe flakes via strain engineering

Science.gov (United States)

Li, Yang; Wang, Tianmeng; Wu, Meng; Cao, Ting; Chen, Yanwen; Sankar, Raman; Ulaganathan, Rajesh K.; Chou, Fangcheng; Wetzel, Christian; Xu, Cheng-Yan; Louie, Steven G.; Shi, Su-Fei

2018-04-01

InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We, for the first time, exploit strain to drastically modify the bandgap of two-dimensional (2D) InSe nanoflakes. We demonstrated that we could decrease the bandgap of a few-layer InSe flake by 160 meV through applying an in-plane uniaxial tensile strain to 1.06% and increase the bandgap by 79 meV through applying an in-plane uniaxial compressive strain to 0.62%, as evidenced by photoluminescence (PL) spectroscopy. The large reversible bandgap change of ~239 meV arises from a large bandgap change rate (bandgap strain coefficient) of few-layer InSe in response to strain, ~154 meV/% for uniaxial tensile strain and ~140 meV/% for uniaxial compressive strain, representing the most pronounced uniaxial strain-induced bandgap strain coefficient experimentally reported in 2D materials. We developed a theoretical understanding of the strain-induced bandgap change through first-principles DFT and GW calculations. We also confirmed the bandgap change by photoconductivity measurements using excitation light with different photon energies. The highly tunable bandgap of InSe in the infrared regime should enable a wide range of applications, including electro-mechanical, piezoelectric and optoelectronic devices.

Fiber Bragg grating based arterial localization device

Science.gov (United States)

Ho, Siu Chun Michael; Li, Weijie; Razavi, Mehdi; Song, Gangbing

2017-06-01

A critical first step to many surgical procedures is locating and gaining access to a patients vascular system. Vascular access allows the deployment of other surgical instruments and also the monitoring of many physiological parameters. Current methods to locate blood vessels are predominantly based on the landmark technique coupled with ultrasound, fluoroscopy, or Doppler. However, even with experience and technological assistance, locating the required blood vessel is not always an easy task, especially with patients that present atypical anatomy or suffer from conditions such as weak pulsation or obesity that make vascular localization difficult. With recent advances in fiber optic sensors, there is an opportunity to develop a new tool that can make vascular localization safer and easier. In this work, the authors present a new fiber Bragg grating (FBG) based vascular access device that specializes in arterial localization. The device estimates the location towards a local artery based on the bending of a needle inserted near the tissue surrounding the artery. Experimental results obtained from an artificial circulatory loop and a mock artery show the device works best for lower angles of needle insertion and can provide an approximately 40° range of estimation towards the location of a pulsating source (e.g. an artery).

Evaluation of a completely automated cold fiber device using compounds with varying volatility and polarity.

Science.gov (United States)

Jiang, Ruifen; Carasek, Eduardo; Risticevic, Sanja; Cudjoe, Erasmus; Warren, Jamie; Pawliszyn, Janusz

2012-09-12

A fully automated cold fiber solid phase microextraction device has been developed by coupling to a GERSTEL multipurpose (MPS 2) autosampler and applied to the analysis of volatiles and semi-volatiles in aqueous and solid matrices. The proposed device was thoroughly evaluated for its extraction performance, robustness, reproducibility and reliability by gas chromatograph/mass spectrometer (GC/MS). With the use of a septumless head injector, the entire automated setup was capable of analyzing over 200 samples without any GC injector leakages. Evaluation of the automated cold fiber device was carried out using a group of compounds characterized by different volatilities and polarities. Extraction efficiency as well as analytical figures of merit was compared to commercial solid phase microextraction fibers. The automated cold fiber device showed significantly improved extraction efficiency compared to the commercial polydimethylsiloxane (PDMS) and cold fiber without cooling for the analysis of aqueous standard samples due to the low temperature of the coating. Comparing results obtained from cold fiber and commercial divinylbenzene/carboxen/polydimethylsiloxane (DVB/CAR/PDMS) fiber temperature profile demonstrated that the temperature gap between the sample matrix and the coating improved the distribution coefficient and therefore the extraction amount. The linear dynamic range of the cold fiber device was 0.5 ng mL(-1) to 100 ng mL(-1) with a linear regression coefficient ≥0.9963 for all compounds. The limit of detection for all analytes ranged from 1.0 ng mL(-1) to 9.4 ng mL(-1). The newly automated cold fiber device presents a platform for headspace analysis of volatiles and semi-volatiles for large number of samples with improved throughput and sensitivity. Copyright © 2012 Elsevier B.V. All rights reserved.

78 FR 16296 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

Science.gov (United States)

2013-03-14

... Fiber Optic Communications, Components Thereof, and Products Containing Same; Commission Determination... United States after importation of certain optoelectronic devices for fiber optic communications... Fiber IP (Singapore) Pte. Ltd. of Singapore (``Avago Fiber IP''); Avago General IP and Avago...

Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage

Science.gov (United States)

Limpert, Steven; Burke, Adam; Chen, I.-Ju; Anttu, Nicklas; Lehmann, Sebastian; Fahlvik, Sofia; Bremner, Stephen; Conibeer, Gavin; Thelander, Claes; Pistol, Mats-Erik; Linke, Heiner

2017-10-01

Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated ‘hot carriers’ before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier, an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells.

Bandgap tunability at single-layer molybdenum disulphide grain boundaries

KAUST Repository

Huang, Yu Li

2015-02-17

Two-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties of interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle energy gap to be 2.40±0.05 eV for single-layer, 2.10±0.05 eV for bilayer and 1.75±0.05 eV for trilayer molybdenum disulphide, which were directly grown on a graphite substrate by chemical vapour deposition method. More interestingly, we report an unexpected bandgap tunability (as large as 0.85±0.05 eV) with distance from the grain boundary in single-layer molybdenum disulphide, which also depends on the grain misorientation angle. This work opens up new possibilities for flexible electronic and optoelectronic devices with tunable bandgaps that utilize both the control of two-dimensional layer thickness and the grain boundary engineering.

Systematic design of phononic band-gap materials and structures by topology optimization

DEFF Research Database (Denmark)

Sigmund, Ole; Jensen, Jakob Søndergaard

2003-01-01

Phononic band-gap materials prevent elastic waves in certain frequency ranges from propagating, and they may therefore be used to generate frequency filters, as beam splitters, as sound or vibration protection devices, or as waveguides. In this work we show how topology optimization can be used...... to design and optimize periodic materials and structures exhibiting phononic band gaps. Firstly, we optimize infinitely periodic band-gap materials by maximizing the relative size of the band gaps. Then, finite structures subjected to periodic loading are optimized in order to either minimize the structural...

Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices

Science.gov (United States)

Baira, Mourad; Salem, Bassem; Madhar, Niyaz Ahamad; Ilahi, Bouraoui

2018-05-01

In this work, interband and intraband optical transitions from direct bandgap strained GeSn/Ge quantum dots are numerically tuned by evaluating the confined energies for heavy holes and electrons in D- and L-valley. The practically exploitable emission wavelength ranges for efficient use in light emission and sensing should fulfill specific criteria imposing the electrons confined states in D-valley to be sufficiently below those in L-valley. This study shows that GeSn quantum dots offer promising opportunity towards high efficient group IV based infrared optical devices operating in the mid-IR and far-IR wavelength regions.

Coupled-resonator-induced plasmonic bandgaps.

Science.gov (United States)

Wang, Yujia; Sun, Chengwei; Gong, Qihuang; Chen, Jianjun

2017-10-15

By drawing an analogy with the conventional photonic crystals, the plasmonic bandgaps have mainly employed the periodic metallic structures, named as plasmonic crystals. However, the sizes of the plasmonic crystals are much larger than the wavelengths, and the large sizes considerably decrease the density of the photonic integration circuits. Here, based on the coupled-resonator effect, the plasmonic bandgaps are experimentally realized in the subwavelength waveguide-resonator structure, which considerably decreases the structure size to subwavelength scales. An analytic model and the phase analysis are established to explain this phenomenon. Both the experiment and simulation show that the plasmonic bandgap structure has large fabrication tolerances (>20%). Instead of the periodic metallic structures in the bulky plasmonic crystals, the utilization of the subwavelength plasmonic waveguide-resonator structure not only significantly shrinks the bandgap structure to be about λ 2 /13, but also expands the physics of the plasmonic bandgaps. The subwavelength dimension, together with the waveguide configuration and robust realization, makes the bandgap structure easy to be highly integrated on chips.

Analysis of flavor and perfume using an internally cooled coated fiber device.

Science.gov (United States)

Chen, Yong; Begnaud, Frédéric; Chaintreau, Alain; Pawliszyn, Janusz

2007-05-01

A miniaturized internally cooled coated fiber device was applied for the analysis of flavors and fragrances from various matrices. Its integration with a CTC CombiPAL autosampler enabled high throughput for the analysis of analytes in complex matrices that required simultaneous heating of the matrices and cooling of the fiber coating to achieve high extraction efficiency. It was found that up to ten times increase of extraction efficiencies was observed when the device was used to extract flavor compounds in water, even when limited sample temperatures were used to preserve the integrity of target compounds. The extraction of the flavor compounds in water with the device was reproducible, with RSD not larger than 15%. The lower limits of the linear ranges were in the low ppb range, which was about one order of magnitude smaller than those obtained with the commercialized 100 microm PDMS fibers. Exhaustive extraction of some perfume ingredients from a complex matrix (shampoo) was realized. All achieved recoveries were not less than 80%. The repeatability of the extraction of the perfume compounds from shampoo was better than 10%. The linear ranges were about 1-3000 microg/g, and the LOD was about 0.2-1 microg/g. The automated internally cooled coated fiber device was demonstrated to be a powerful sample preparation tool in flavor and fragrance analysis.

Novel Crosstalk Measurement Method for Multi-Core Fiber Fan-In/Fan-Out Devices

DEFF Research Database (Denmark)

Ye, Feihong; Ono, Hirotaka; Abe, Yoshiteru

2016-01-01

We propose a new crosstalk measurement method for multi-core fiber fan-in/fan-out devices utilizing the Fresnel reflection. Compared with the traditional method using core-to-core coupling between a multi-core fiber and a single-mode fiber, the proposed method has the advantages of high reliability...

Microstructured optical fibers - Fundamentals and applications

DEFF Research Database (Denmark)

Lægsgaard, Jesper; Bjarklev, Anders Overgaard

2006-01-01

In recent years optical fibers having a complex microstructure in the transverse plane have attracted much attention from both researchers and industry. Such fibers can either guide light through total internal reflection or the photonic bandgap effect. Among the many unique applications offered...... by these fibers are mode guidance in air, highly flexible dispersion engineering, and the use of very heterogeneous material combinations. In this paper, we review the different types and applications of microstructured optical fibers, with particular emphasis on recent advances in the field....

Stable Inverted Low-Bandgap Polymer Solar Cells with Aqueous Solution Processed Low-Temperature ZnO Buffer Layers

Directory of Open Access Journals (Sweden)

Chunfu Zhang

2016-01-01

Full Text Available Efficient inverted low-bandgap polymer solar cells with an aqueous solution processed low-temperature ZnO buffer layer have been investigated. The low-bandgap material PTB-7 is employed so that more solar light can be efficiently harvested, and the aqueous solution processed ZnO electron transport buffer layer is prepared at 150°C so that it can be compatible with the roll-to-roll process. Power conversion efficiency (PCE of the inverted device reaches 7.12%, which is near the control conventional device. More importantly, the inverted device shows a better stability, keeping more than 90% of its original PCE after being stored for 625 hours, while PCE of the conventional device is only 75% of what it was. In addition, it is found that the ZnO thin film annealed in N2 can obviously increase PCE of the inverted device further to 7.26%.

Application of Nd/sup 3+/-doped silica fibers to radiation sensing devices

International Nuclear Information System (INIS)

Imamura, K.; Suzuki, T.; Gozen, T.; Tanaka, H.; Okamoto, S.

1987-01-01

Applications of rare-earth-ion-doped optical fibers to radiation sensing devices have been studied. It was revealed that rare-earth-ion-doped optical fibers are highly sensitive to radioactive rays such as gamma ray and thermal neutron flux and that they have little dependence on ambient temperature and optical power. An experimental distributed radiation sensing system incorporating Nd/sup 3+/-doped optical fibers, radiation resistant optical fibers and an OTDR was made and tested. The results proved that the distributed sensing system is practically adaptable to the measurement of the radioactive rays

Fiber bundle probes for interconnecting miniaturized medical imaging devices

Science.gov (United States)

Zamora, Vanessa; Hofmann, Jens; Marx, Sebastian; Herter, Jonas; Nguyen, Dennis; Arndt-Staufenbiel, Norbert; Schröder, Henning

2017-02-01

Miniaturization of medical imaging devices will significantly improve the workflow of physicians in hospitals. Photonic integrated circuit (PIC) technologies offer a high level of miniaturization. However, they need fiber optic interconnection solutions for their functional integration. As part of European funded project (InSPECT) we investigate fiber bundle probes (FBPs) to be used as multi-mode (MM) to single-mode (SM) interconnections for PIC modules. The FBP consists of a set of four or seven SM fibers hexagonally distributed and assembled into a holder that defines a multicore connection. Such a connection can be used to connect MM fibers, while each SM fiber is attached to the PIC module. The manufacturing of these probes is explored by using well-established fiber fusion, epoxy adhesive, innovative adhesive and polishing techniques in order to achieve reliable, low-cost and reproducible samples. An innovative hydrofluoric acid-free fiber etching technology has been recently investigated. The preliminary results show that the reduction of the fiber diameter shows a linear behavior as a function of etching time. Different etch rate values from 0.55 μm/min to 2.3 μm/min were found. Several FBPs with three different type of fibers have been optically interrogated at wavelengths of 630nm and 1550nm. Optical losses are found of approx. 35dB at 1550nm for FBPs composed by 80μm fibers. Although FBPs present moderate optical losses, they might be integrated using different optical fibers, covering a broad spectral range required for imaging applications. Finally, we show the use of FBPs as promising MM-to-SM interconnects for real-world interfacing to PIC's.

Degenerate four wave mixing in large mode area hybrid photonic crystal fibers

DEFF Research Database (Denmark)

Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Lægsgaard, Jesper

2013-01-01

Spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers, in which photonic bandgap guidance and index guidance is combined. Calculations show the parametric gain is maximum on the edge of a photonic bandgap, for a large range of pump...... wavelengths. The FWM products are observed on the edges of a transmission band experimentally, in good agreement with the numerical results. Thereby the bandedges can be used to control the spectral positions of FWM products through a proper fiber design. The parametric gain control combined with a large mode...... area fiber design potentially allows for power scaling of light at wavelengths not easily accessible with e.g. rare earth ions....

FiberNet--a new embolic protection device for carotid artery stenting.

Science.gov (United States)

Bauer, C; Franke, J; Bertog, S C; Woerner, V; Ghasemzadeh-Asl, S; Sievert, H

2014-05-01

Though distal filter protection during carotid stenting reduces the risk of cerebrovascular events, periprocedural stroke remains a risk despite their broad usage. This observation may be related to the pore size of common filters. The FiberNet distal filter system is unique by its very small pore size (40 µm) as well as its low profile and flexibility. Little data is available regarding the clinical performance and safety of this device. The aim was the evaluation of the safety of the FiberNet embolic protection system during carotid artery stenting. All consecutive patients treated with carotid stenting at our institution using the FiberNet device were systematically followed. Primary endpoint was the rate of all death and stroke within 30 days of the procedure. Carotid artery stenting using the FiberNet embolic protection system was performed in 54 patients. The procedure was technical successful in all patients. Three patients (5.5%) had a TIA. Amauosis fugax occurred in two patients (3.7%). One patient (1.9%) had a minor stroke with hemiparesis of the left arm and face which resolved completely within 48 hr after the procedure. No patient died or suffered a major stroke. The safety and feasibility of the FiberNet distal protection system appears to be at least equivalent to that reported in studies using conventional distal filter protection. Copyright © 2013 Wiley Periodicals, Inc.

III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

KAUST Repository

Detchprohm, T.

2016-11-05

The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.

Synthesis and characterization of a low bandgap conjugated polymer for bulk heterojunction photovoltaic cells

NARCIS (Netherlands)

Dhanabalan, A.; Duren, van J.K.J.; Hal, van P.A.; Dongen, van J.L.J.; Janssen, R.A.J.

2001-01-01

Low optical bandgap conjugated polymers may improve the efficiency of organic photovoltaic devices by increasing the absorption in the visible and near infrared region of the solar spectrum. Here we demonstrate that condensation polymerization of

Active fiber optic technologies used as tamper-indicating devices

International Nuclear Information System (INIS)

Horton, P.R.V.; Waddoups, I.G.

1995-11-01

The Sandia National Laboratories (SNL) Safeguards and Seals Evaluation Program is evaluating new fiber optic active seal technologies for use at Department of Energy (DOE) facilities. The goal of the program is to investigate active seal technologies that can monitor secured containers storing special nuclear materials (SNM) within DOE vaults. Specifically investigated were active seal technologies that can be used as tamper-indicating devices to monitor secured containers within vaults while personnel remain outside the vault area. Such a system would allow minimal access into vaults while ensuring container content accountability. The purpose of this report is to discuss tamper-indicating devices that were evaluated for possible DOE use. While previous seal evaluations (Phase I and II) considered overall facility applications, this discussion focuses specifically on their use in vault storage situations. The report will highlight general background information, specifications and requirements, and test procedures. Also discussed are the systems available from four manufacturers: Interactive Technologies, Inc., Fiber SenSys, Inc., Inovonics, Inc., and Valve Security Systems

Compact and high-efficiency device for Raman scattering measurement using optical fibers.

Science.gov (United States)

Mitsui, Tadashi

2014-11-01

We describe the design and development of a high-efficiency optical measurement device for operation within the small bore of a high-power magnet at low temperature. For the high-efficiency measurement of light emitted from this small region, we designed a compact confocal optics with lens focusing and tilting systems, and used a piezodriven translation stage that allows micron-scale focus control of the sample position. We designed a measurement device that uses 10 m-long optical fibers in order to avoid the influence of mechanical vibration and magnetic field leakage of high-power magnets, and we also describe a technique for minimizing the fluorescence signal of optical fibers. The operation of the device was confirmed by Raman scattering measurements of monolayer graphene on quartz glass with a high signal-to-noise ratio.

Photo-Detection on Narrow-Bandgap High-Mobility 2D Semiconductors

Science.gov (United States)

Charnas, Adam; Qiu, Gang; Deng, Yexin; Wang, Yixiu; Du, Yuchen; Yang, Lingming; Wu, Wenzhuo; Ye, Peide

Photo-detection and energy harvesting device concepts have been demonstrated widely in 2D materials such as graphene, TMDs, and black phosphorus. In this work, we demonstrate anisotropic photo-detection achieved using devices fabricated from hydrothermally grown narrow-bandgap high-mobility 2D semiconductor. Back-gated FETs were fabricated by transferring the 2D flakes onto a Si/SiO2 substrate and depositing various metal contacts across the flakes to optimize the access resistance for optoelectronic devices. Photo-responsivity was measured and mapped by slightly biasing the devices and shining a laser spot at different locations of the device to observe and map the resulting photo-generated current. Optimization of the Schottky barrier height for both n and p at the metal-2D interfaces using asymmetric contact engineering was performed to improve device performance.

All-Fiber Raman Probe

DEFF Research Database (Denmark)

Brunetti, Anna Chiara

by means of fiber components. Assuming the possibility to use a fiber laser with a fundamental radiation at 1064nm, in-fiber efficient second harmonic generation is achieved by optically poling the core of the waveguide delivering the excitation light to the sample. In this way, Raman spectroscopy...... in the visible range can be performed. The simultaneous delivery of the excitation light and collection of the Raman signal from the sample are achieved by means of a doubleclad fiber, whose core and inner cladding act as \\independent" transmission channels. A double-clad fiber coupler allows for the recovery...... of the collected Raman scattering from the inner-cladding region of the double-clad fiber, thus replacing the bulk dichroic component normally used to demultiplex the pump and Raman signal. A tunable Rayleigh-rejection filter based on a liquid filled-photonic bandgap fiber is also demonstrated in this work...

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

Science.gov (United States)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in

Tunable bandgaps in a deployable metamaterial

Science.gov (United States)

Nanda, Aditya; Karami, M. A.

2018-06-01

In this manuscript, we investigate deployable structures (such as solar arrays) and origami-inspired foldable structures as metamaterials capable of tunable wave manipulation. Specifically, we present a metamaterial whose bandgaps can be modulated by changing the fold angle of adjacent panels. The repeating unit cell of the structure consists of a beam (representing a panel) and a torsional spring (representing the folding mechanism). Two important cases are considered. Firstly, the fold angle (angle between adjacent beams), Ψ, is zero and only flexural waves propagate. In the second case, the fold angle is greater than zero (Ψ > 0). This causes longitudinal and transverse vibration to be coupled. FEM models are used to validate both these analyses. Increasing the fold angle was found to inflict notable changes to the wave transmission characteristics of the structure. In general, increasing the fold angles caused the bandwidth of bandgaps to increase. For the lowest four bandgaps we found bandwidth increases of 252 %, 177 %, 230 % and 163 % respectively at Ψ = 90 deg (relative to the bandwidths at Ψ = 0). In addition, non-trivial increases in bandwidth of the odd-numbered bandgaps occurs even at small fold angles-the bandwidth for the first and third bandgaps effectively double in size (increase by 100 %) at Ψ = 20 deg relative to those at Ψ = 0. This could have ramifications in the context of tunable wave manipulation and adaptive filtering. In addition, by expanding out the characteristic equation of transfer matrix for the straight structure, we prove that the upper band edge of the nth bandgap will always equal the nth simply supported natural frequency of the constituent beam. Further, we found that the ratio (EI/kt) is a pertinent parameter affecting the bandwidth of bandgaps. For low values of the ratio, effectively, no bandgap exists. For higher values of the ratio (EI/kt), we obtain a relatively large bandgap over which no waves propagate. This can

Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films.

Science.gov (United States)

Li, D L; Ma, Q L; Wang, S G; Ward, R C C; Hesjedal, T; Zhang, X-G; Kohn, A; Amsellem, E; Yang, G; Liu, J L; Jiang, J; Wei, H X; Han, X F

2014-12-02

Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.

Colloidal Engineering for Infrared-Bandgap Solution-Processed Quantum Dot Solar Cells

Science.gov (United States)

Kiani, Amirreza

harvesting for the first time. Addition of short bromothiol ligands during the synthesis significantly reduces the agglomeration of 1 eV bandgap CQDs and maintains efficient charge extraction into the selective electrodes. The devices can augment the performance of the best silicon cells by 7 power points where 0.8 additive power points are demonstrated experimentally. A tailored solution exchanged process developed for 1 eV bandgap CQDs results in air-stable IR PV devices with improved manufacturability. The process utilizes a tailored combination of lead iodide (PbI2) and ammonium acetate for the solution exchange and hexylamine + MEK as the final solvent to yield solar thick films with the filtered (1100 nm and beyond) performance of 0.4%. This thesis pushes the limit of CQD device applications to waste heat recovery. I demonstrate successful harvesting of low energy photons emitted from a hot object by designing and developing the first solution-processed thermophotovoltaic devices. These devices are comprised of 0.7 eV bandgap CQDs that successfully harvest photons emitted from an 800°C heat source.

Wide bandgap collector III-V double heterojunction bipolar transistors

International Nuclear Information System (INIS)

Flitcroft, R.M.

2000-10-01

This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the intrinsic gain of the devices to extract impact ionisation coefficients over a range of electric fields beyond the scope of conventional optical injection techniques. This data has enabled the study of ''dead space'' effects in HBT collectors and have been used to develop an analytical model of impact ionisation which has been incorporated into an existing Ebers-Moll HBT simulator. This simulator has been shown to accurately reproduce current-voltage characteristics in both the devices used in this work and for external clients. (author)

Coupled Acoustic-Mechanical Bandgaps

DEFF Research Database (Denmark)

Jensen, Jakob Søndergaard; Kook, Junghwan

2016-01-01

medium and the presence of acoustic resonances. It is demonstrated that corrugation of the plate structure can introduce bending wave bandgaps and bandgaps in the acoustic domain in overlapping and audible frequency ranges. This effect is preserved also when taking the physical coupling between the two...... domains into account. Additionally, the coupling is shown to introduce extra gaps in the band structure due to modal interaction and the appearance of a cut-on frequency for the fundamental acoustic mode....

Optical spectroscopy and imaging of the higher energy excitons and bandgap of monolayer MoS2

Science.gov (United States)

Borys, Nicholas; Bao, Wei; Barnard, Edward; Ko, Changhyun; Tongay, Sefaatin; Wu, Junqiao; Yang, Li; Schuck, P. James

Monolayer MoS2 (ML-MoS2) exhibits a rich manifold of excitons that dictate optoelectronic performance and functionality. Disentangling these states, which include the quasi-particle bandgap, is critical for developing 2D optoelectronic devices that operate beyond the optical bandgap. Whereas photoluminescence (PL) spectroscopy only probes the lowest-energy radiative state and absorption spectroscopy fails to discriminate energetically degenerate states, photoluminescence excitation (PLE) spectroscopy selectively probes only the excited states that thermalize to the emissive ground state exciton. Using PLE spectroscopy of ML-MoS2, we identify the Rydberg series of the exciton A and exciton B states as well as signatures of the quasi-particle bandgap and coupling between the indirect C exciton and the lowest-energy A exciton, which have eluded previous PLE studies. The assignment of these states is confirmed with density functional theory. Mapping the PLE spectrum reveals spatial variations of the higher-energy exciton manifold and quasi-particle bandgap which mirror the heterogeneity in the PL but also indicate variations in local exciton thermalization processes and chemical potentials.

Monitoring the Wobbe Index of Natural Gas Using Fiber-Enhanced Raman Spectroscopy.

Science.gov (United States)

Sandfort, Vincenz; Trabold, Barbara M; Abdolvand, Amir; Bolwien, Carsten; Russell, Philip St. J; Wöllenstein, Jürgen; Palzer, Stefan

2017-11-24

The fast and reliable analysis of the natural gas composition requires the simultaneous quantification of numerous gaseous components. To this end, fiber-enhanced Raman spectroscopy is a powerful tool to detect most components in a single measurement using a single laser source. However, practical issues such as detection limit, gas exchange time and background Raman signals from the fiber material still pose obstacles to utilizing the scheme in real-world settings. This paper compares the performance of two types of hollow-core photonic crystal fiber (PCF), namely photonic bandgap PCF and kagomé-style PCF, and assesses their potential for online determination of the Wobbe index. In contrast to bandgap PCF, kagomé-PCF allows for reliable detection of Raman-scattered photons even below 1200 cm -1 , which in turn enables fast and comprehensive assessment of the natural gas quality of arbitrary mixtures.

Optimal design of tunable phononic bandgap plates under equibiaxial stretch

International Nuclear Information System (INIS)

Hedayatrasa, Saeid; Abhary, Kazem; Uddin, M S; Guest, James K

2016-01-01

Design and application of phononic crystal (PhCr) acoustic metamaterials has been a topic with tremendous growth of interest in the last decade due to their promising capabilities to manipulate acoustic and elastodynamic waves. Phononic controllability of waves through a particular PhCr is limited only to the spectrums located within its fixed bandgap frequency. Hence the ability to tune a PhCr is desired to add functionality over its variable bandgap frequency or for switchability. Deformation induced bandgap tunability of elastomeric PhCr solids and plates with prescribed topology have been studied by other researchers. Principally the internal stress state and distorted geometry of a deformed phononic crystal plate (PhP) changes its effective stiffness and leads to deformation induced tunability of resultant modal band structure. Thus the microstructural topology of a PhP can be altered so that specific tunability features are met through prescribed deformation. In the present study novel tunable PhPs of this kind with optimized bandgap efficiency-tunability of guided waves are computationally explored and evaluated. Low loss transmission of guided waves throughout thin walled structures makes them ideal for fabrication of low loss ultrasound devices and structural health monitoring purposes. Various tunability targets are defined to enhance or degrade complete bandgaps of plate waves through macroscopic tensile deformation. Elastomeric hyperelastic material is considered which enables recoverable micromechanical deformation under tuning finite stretch. Phononic tunability through stable deformation of phononic lattice is specifically required and so any topology showing buckling instability under assumed deformation is disregarded. Nondominated sorting genetic algorithm (GA) NSGA-II is adopted for evolutionary multiobjective topology optimization of hypothesized tunable PhP with square symmetric unit-cell and relevant topologies are analyzed through finite

Photonic Bandgap (PBG) Shielding Technology

Science.gov (United States)

Bastin, Gary L.

2007-01-01

Photonic Bandgap (PBG) shielding technology is a new approach to designing electromagnetic shielding materials for mitigating Electromagnetic Interference (EM!) with small, light-weight shielding materials. It focuses on ground planes of printed wiring boards (PWBs), rather than on components. Modem PSG materials also are emerging based on planar materials, in place of earlier, bulkier, 3-dimensional PBG structures. Planar PBG designs especially show great promise in mitigating and suppressing EMI and crosstalk for aerospace designs, such as needed for NASA's Constellation Program, for returning humans to the moon and for use by our first human visitors traveling to and from Mars. Photonic Bandgap (PBG) materials are also known as artificial dielectrics, meta-materials, and photonic crystals. General PBG materials are fundamentally periodic slow-wave structures in I, 2, or 3 dimensions. By adjusting the choice of structure periodicities in terms of size and recurring structure spacings, multiple scatterings of surface waves can be created that act as a forbidden energy gap (i.e., a range of frequencies) over which nominally-conductive metallic conductors cease to be a conductor and become dielectrics. Equivalently, PBG materials can be regarded as giving rise to forbidden energy gaps in metals without chemical doping, analogous to electron bandgap properties that previously gave rise to the modem semiconductor industry 60 years ago. Electromagnetic waves cannot propagate over bandgap regions that are created with PBG materials, that is, over frequencies for which a bandgap is artificially created through introducing periodic defects

Chemical and Biological Sensing with a Fiber Optic Surface Plasmon Resonance Device

Science.gov (United States)

Shevchenko, Yanina

Fiber biosensors have emerged as an alternative to other optical sensor platforms which utilize bulkier optical elements. Sensors manufactured using optical fiber offer considerable advantages over traditional platforms, such as simple manufacturing process, small size and possibility for in situ and remote measurements. The possibility to manufacture a compact sensor with very few optical elements and package it into a portable hand-held device makes it particularly useful in many biomedical applications. Such applications generate a growing demand for an improved understanding of how fiber sensors function as well as for sensor optimization techniques so later these devices can suit the needs of the applications they are developed for. Research presented in this thesis is focused on a development of a plasmonic fiber biosensor and its application towards biochemical sensing. The fiber sensor used in this study integrates plasmonics with tilted Bragg grating technology, creating a versatile sensing solution. Plasmonics alone is an established phenomenon that is widely employed in many sensing applications. The Bragg grating is also a well-researched optical component that has been extensively applied in telecommunication. By combining both plasmonics and Bragg gratings, it is possible to design a compact and very sensitive chemical sensor. The presented work focuses on the characterization and optimization of the fiber sensor so later it could be applied in biochemical sensing. It also explores several applications including real-time monitoring of polymer adsorption, detection of thrombin and cellular sensing. All applications are focused on studying processes that are very different in their nature and thus the various strengths of the developed sensing platform were leveraged to suit the requirements of these applications.

FIBER AND INTEGRATED OPTICS: Bandgap modes in a coupled waveguide array

Science.gov (United States)

Usievich, B. A.; Nurligareev, D. Kh; Svetikov, V. V.; Sychugov, V. A.

2009-08-01

This work examines a waveguide array that consists of ten Nb2O5/SiO2 double layers and supports a 0.63-μm surface wave. The deposition of a Nb2O5 capping layer on top of the waveguide array enables a marked increase in the wave field intensity on its surface. The efficiency of surface-wave excitation in the Kretschmann configuration can be optimised by adjusting the number of double layers. We analyse the behaviour of the Bragg mode in relation to the thickness of the layer exposed to air and the transition of this mode from the second allowed band to the first through the bandgap of the system. In addition, the conventional leaky mode converts to a surface mode and then to a guided mode.

Frequency conversion through spontaneous degenerate four wave mixing in large mode area hybrid photonic crystal fibers

DEFF Research Database (Denmark)

Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Olausson, Christina Bjarnal Thulin

2014-01-01

Frequency conversion through spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers. Different FWM processes are observed, phasematching between fiber modes of orthogonal polarization, intermodal phasematching across bandgaps, and intramodal...

Electrical and Optical Measurements of the Bandgap Energy of a Light-Emitting Diode

Science.gov (United States)

Petit, Matthieu; Michez, Lisa; Raimundo, Jean-Manuel; Dumas, Philippe

2016-01-01

Semiconductor materials are at the core of electronics. Most electronic devices are made of semiconductors. The operation of these components is well described by quantum physics which is often a difficult concept for students to understand. One of the intrinsic parameters of semiconductors is their bandgap energy E[subscript g]. In the case of…

Effect of Non-Stoichiometric Solution Chemistry on Improving the Performance of Wide-Bandgap Perovskite Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Zhu, Kai [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Yang, Mengjin [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kim, Donghoe [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Li, Zhen [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Reid, Obadiah G [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Yu, Yue [University of Toledo; Song, Zhaoning [University of Toledo; Zhao, Dewei [University of Toledo; Wang, Changlei [University of Toledo; Li, Liwei [ENN Energy Research Institute; ENN Solar Energy Co., Ltd.; Meng, Yuan [ENN Energy Research Institute; ENN Solar Energy Co., Ltd.; Guo, Ted [ENN Energy Research Institute; ENN Solar Energy Co., Ltd.; Yan, Yanfa [University of Toledo

2017-10-18

A high-efficiency wide-bandgap (WBG) perovskite solar cell is critical for developing perovskite-related (e.g., all-perovskite, perovskite/Si, or perovskite/Cu(In,Ga)Se2) tandem devices. Here, we demonstrate the use of non-stoichiometric precursor chemistry with excess methylammonium halides (MAX; X = I, Br, or Cl) for preparing high-quality ~1.75-eV FA0.83Cs0.17Pb(I0.6Br0.4)3 perovskite solar cells. Among various methylammonium halides, using excess MABr in the non-stoichiometric precursor exhibits the strongest effect on improving perovskite crystallographic properties and device characteristics without affecting the perovskite composition. In contrast, using excess MAI significantly reduces the bandgap of perovskite due to the replacement of Br with I. Using 40% excess MABr, we demonstrate a single-junction WBG perovskite solar cell with stabilized efficiency of 16.4%. We further demonstrate a 20.3%-efficient 4-terminal tandem device by using a 14.7%-efficient semi-transparent WBG perovskite top cell and an 18.6%-efficient unfiltered (5.6%-efficient filtered) Si bottom cell.

Growth of Bulk Wide Bandgap Semiconductor Crystals and Their Potential Applications

Science.gov (United States)

Chen, Kuo-Tong; Shi, Detang; Morgan, S. H.; Collins, W. Eugene; Burger, Arnold

1997-01-01

Developments in bulk crystal growth research for electro-optical devices in the Center for Photonic Materials and Devices since its establishment have been reviewed. Purification processes and single crystal growth systems employing physical vapor transport and Bridgman methods were assembled and used to produce high purity and superior quality wide bandgap materials such as heavy metal halides and II-VI compound semiconductors. Comprehensive material characterization techniques have been employed to reveal the optical, electrical and thermodynamic properties of crystals, and the results were used to establish improved material processing procedures. Postgrowth treatments such as passivation, oxidation, chemical etching and metal contacting during the X-ray and gamma-ray device fabrication process have also been investigated and low noise threshold with improved energy resolution has been achieved.

Monitoring the Wobbe Index of Natural Gas Using Fiber-Enhanced Raman Spectroscopy

Directory of Open Access Journals (Sweden)

Vincenz Sandfort

2017-11-01

Full Text Available The fast and reliable analysis of the natural gas composition requires the simultaneous quantification of numerous gaseous components. To this end, fiber-enhanced Raman spectroscopy is a powerful tool to detect most components in a single measurement using a single laser source. However, practical issues such as detection limit, gas exchange time and background Raman signals from the fiber material still pose obstacles to utilizing the scheme in real-world settings. This paper compares the performance of two types of hollow-core photonic crystal fiber (PCF, namely photonic bandgap PCF and kagomé-style PCF, and assesses their potential for online determination of the Wobbe index. In contrast to bandgap PCF, kagomé-PCF allows for reliable detection of Raman-scattered photons even below 1200 cm−1, which in turn enables fast and comprehensive assessment of the natural gas quality of arbitrary mixtures.

Topological trigger device using scintillating fibers and position-sensitive photomultipliers

Energy Technology Data Exchange (ETDEWEB)

Kuroda, Keiichi; Dufournaud, J; Sillou, D [Laboratoire d' Annecy-le-Vieux de Physique des Particules (LAPP), 74 (France); Agoritsas, V [European Organization for Nuclear Research, Geneva (Switzerland); Bystricky, G; Lehar, F; Lesquen, A de [CEN-Saclay, 91 - Gif-sur-Yvette (France); Giacomich, R; Pauletta, G; Penzo, A; Salvato, G; Schiavon, P; Villari, A [INFN, Messina (Italy) INFN, Trieste (Italy) INFN, Udine (Italy); Gorin, A M; Meschanin, A P; Nurushev, S B; Rakhmatov, V E; Rykalin, V L; Solovyanov, V L; Vasiliev, A N; Vasil' chencko, V G [Institute for High Energy Physics, Serpukhov (USSR); Oshima, N; Yamada, R [Fermi National Accelerator Lab., Batavia, IL (USA); Takeutchi, F [Kyoto-Sanyo Univ., Kyoto (Japan); Yoshida, T [Osaka City Univ. (Japan); Akchurin, N; Onel, Y; Newsom, C

1991-07-01

An approach to a high quality of the Level-1 Trigger is investigated on the basis of a topological trigger device. It will be realized by using scintillating fibers and position-sensitive photomultipliers, both considered as potential candidates of new detector-components thanks to their excellent time characteristics and high radiation resistances. The device is characterized in particular by its simple concept and reliable operation supported by the mature technologies emploied. The major interests of such a scheme under LHC environments reside in its capability of selcting high pperpendicular to tracks in real time, its optional immunity against low pperpendicular to tracks and loopers, as well as its effective links to other associated devices in the complex of a vertex detector. (orig.).

Investigating the electronic properties of multi-junction ZnS/CdS/CdTe graded bandgap solar cells

Energy Technology Data Exchange (ETDEWEB)

Olusola, O.I., E-mail: olajideibk@yahoo.com [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Department of Physics, School of Science, The Federal University of Technology, Akure (FUTA), P.M.B. 704 (Nigeria); Madugu, M.L.; Dharmadasa, I.M. [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom)

2017-04-15

The fabrication of multi-junction graded bandgap solar cells have been successfully implemented by electroplating three binary compound semiconductors from II-VI family. The three semiconductor materials grown by electroplating techniques are ZnS, CdS and CdTe thin films. The electrical conductivity type and energy bandgap of each of the three semiconductors were determined using photoelectrochemical (PEC) cell measurement and UV–Vis spectrophotometry techniques respectively. The PEC cell results show that all the three semiconductor materials have n-type electrical conductivity. These two material characterisation techniques were considered in this paper in order to establish the relevant energy band diagram for device results, analysis and interpretation. Solar cells with the device structure glass/FTO/n-ZnS/n-CdS/n-CdTe/Au were then fabricated and characterised using current-voltage (I-V) and capacitance-voltage (C-V) techniques. From the I-V characteristics measurement, the fabricated device structures yielded an open circuit voltage (V{sub oc}) of 670 mV, short circuit current density (J{sub sc}) of 41.5 mA cm{sup −2} and fill-factor (FF) of 0.46 resulting in ∼12.8% efficiency when measured at room temperature under AM1.5 illumination conditions. The device structure showed an excellent rectification factor (RF) of 10{sup 4.3} and ideality factor (n) of 1.88. The results obtained from the C-V measurement also showed that the device structures have a moderate doping level of 5.2 × 10{sup 15} cm{sup −3}. - Highlights: • Electroplating of n-ZnS, n-CdS and n-CdTe binary compound semiconductors. • Fabrication of Schottky barrier solar cells from glass/FTO/n-ZnS/n-CdS/n-CdTe/Au. • Development of multi-junction graded bandgap solar cells using n-n-n structures.

Regioregular narrow-bandgap-conjugated polymers for plastic electronics

Science.gov (United States)

Ying, Lei; Huang, Fei; Bazan, Guillermo C.

2017-03-01

Progress in the molecular design and processing protocols of semiconducting polymers has opened significant opportunities for the fabrication of low-cost plastic electronic devices. Recent studies indicate that field-effect transistors and organic solar cells fabricated using narrow-bandgap regioregular polymers with translational symmetries in the direction of the backbone vector often outperform those containing analogous regiorandom polymers. This review addresses the cutting edge of regioregularity chemistry, in particular how to control the spatial distribution in the molecular structures and how this order translates to more ordered bulk morphologies. The effect of regioregularity on charge transport and photovoltaic properties is also outlined.

THz Photonic Band-Gap Prisms Fabricated by Fiber Drawing

DEFF Research Database (Denmark)

Busch, Stefan F.; Xu, Lipeng; Stecher, Matthias

2012-01-01

We suggest a novel form of polymeric based 3D photonic crystal prisms for THz frequencies which could be fabricated using a standard fiber drawing technique. The structures are modeled and designed using a finite element analyzing technique. Using this simulation software we theoretically study...

Monolithic Yb-fiber femtosecond laser with intracavity all-solid PBG fiber and ex-cavity HC-PCF

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Liu, Xiaomin; Lægsgaard, Jesper

2010-01-01

(PM) photonic bandgap fiber (PBG) is used in the cavity of the master oscillator for dispersion compensation and stabilization of modelocking. The final compression of an chirped-pulse-amplified laser signal is performed in a hollow PM PCF, yielding final fiber-delivered pulse energy of around 7 n......J, and pulse duration of around 297 fs. The self-stabilization mechanism of the oscillator, based on the optical nonlinearities in an AS PCF, results in excellent environmental and operational stability of our laser. Stable self-starting fundamental modelocking is maintained for at least 4 days of operation......We demonstrate an all-fiber femtosecond master oscillator / power amplifier operating at the central wavelength of 1033 nm, based on Yb-doped fiber as gain medium, and two different kinds of photonic crystal fibers for dispersion control and stabilization. An all-solid (AS) polarization maintaining...

Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors

Science.gov (United States)

Dang Chien, Nguyen; Shih, Chun-Hsing; Hoa, Phu Chi; Minh, Nguyen Hong; Thi Thanh Hien, Duong; Nhung, Le Hong

2016-06-01

The two-band Kane model has been popularly used to calculate the band-to-band tunneling (BTBT) current in tunnel field-effect transistor (TFET) which is currently considered as a promising candidate for low power applications. This study theoretically clarifies the maximum electric field approximation (MEFA) of direct BTBT Kane model and evaluates its appropriateness for low bandgap semiconductors. By analysing the physical origin of each electric field term in the Kane model, it has been elucidated in the MEFA that the local electric field term must be remained while the nonlocal electric field terms are assigned by the maximum value of electric field at the tunnel junction. Mathematical investigations have showed that the MEFA is more appropriate for low bandgap semiconductors compared to high bandgap materials because of enhanced tunneling probability in low field regions. The appropriateness of the MEFA is very useful for practical uses in quickly estimating the direct BTBT current in low bandgap TFET devices.

High bandgap III-V alloys for high efficiency optoelectronics

Energy Technology Data Exchange (ETDEWEB)

Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

2017-01-10

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

Distributed mode filtering rod fiber amplifier delivering 292W with improved mode stability

DEFF Research Database (Denmark)

Laurila, Marko; Jørgensen, Mette Marie; Hansen, Kristian Rymann

2012-01-01

We demonstrate a high power fiber (85μm core) amplifier delivering up to 292Watts of average output power using a mode-locked 30ps source at 1032nm. Utilizing a single mode distributed mode filter bandgap rod fiber, we demonstrate 44% power improvement before the threshold-like onset of mode inst...

Analysis of High Switching Frequency Quasi-Z-Source Photovoltaic Inverter Using Wide Bandgap Devices

Science.gov (United States)

Kayiranga, Thierry

Power inverters continue to play a key role in todays electrical system more than ever. Power inverters employ power semiconductors to converter direct current (DC) into alternating current (AC). The performance of the semiconductors is based on speed and efficiency. Until recently, Silicon (Si) semiconductors had been established as mature. However, the continuous optimization and improvements in the production process of Si to meet today technology requirements have pushed Si materials to their theoretical limits. In an effort to find a suitable replacement, wide bandgap devices mainly Gallium Nitride (GaN) and Silicon Carbide (SiC), have proved to be excellent candidates offering high operation temperature, high blocking voltage and high switching frequency; of which the latter makes GaN a better candidate in high switching low voltage in Distributed Generations (DG). The single stage Quasi-Z-Source Inverter (qZSI) is also able to draw continuous and constant current from the source making ideal for PV applications in addition to allowing shoot-through states. The qZSI find best applications in medium level ranges where multiples qZS inverters can be cascaded (qZS-CMI) by combining the benefit of the qZSI, boost capabilities and continuous and constant input current, and those of the CMI, low output harmonic content and independent MPPT. When used with GaN devices operating at very high frequency, the qZS network impedance can be significantly reduced. However, the impedance network becomes asymmetric. The asymmetric impedance network (AIN-qZSI) has several advantages such as increased power density, increases system lifetime, small size volume and size making it more attractive for module integrated converter (MIC) concepts. However, there are technical challenges. With asymmetric component, resonance is introduced in the system leading to more losses and audible noise. With small inductances, new operation states become available further increasing the system

True photonic band-gap mode-control in VCSEL structures

DEFF Research Database (Denmark)

Romstad, F.; Madsen, M.; Birkedal, Dan

2003-01-01

Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect.......Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....

Gaussian Filtering with Tapered Oil-Filled Photonic Bandgap Fibers

DEFF Research Database (Denmark)

Brunetti, Anna Chiara; Scolari, Lara; Weirich, Johannes

2008-01-01

A tunable Gaussian filter based on a tapered oil-filled photonic crystal fiber is demonstrated. The filter is centered at X=1364nm with a bandwidth (FWHM) of 237nm. Tunability is achieved by changing the temperature of the filter. A shift of 210nm of the central wavelength has been observed...

Single Mode Fiber Optic Transceiver Using Short Wavelength Active Devices In Long Wavelength Fiber

Science.gov (United States)

Gillham, Frederick J.; Campbell, Daniel R.; Corke, Michael; Stowe, David W.

1990-01-01

Presently, single mode optical fiber technology is being utilized in systems to supply telephone service to the subscriber. However, in an attempt to be competitive with copper based systems, there are many development programs underway to determine the most cost effective solution while still providing a service that will either satisfy or be upgradeable to satisfy the demands of the consumer for the next 10 to 20 years. One such approach is to combine low cost laser transmitters and silicon receivers, which have been developed for the "compact disc" industry, with fiber that operates in the single mode regime at 1300 nm. In this paper, an optical transceiver will be presented, consisting of a compact disc laser, a silicon detector and a single mode coupler at 1300 nm. A possible system layout is presented which operates at 780 nm bi-directionally for POTS and upgradeable to 1300 nm for video services. There are several important design criteria that have to be considered in the development of such a system which will be addressed. These include: 1. Optimization of coupled power from laser to fiber while maintaining stable launched conditions over a wide range of environmental conditions. 2. Consideration of the multimode operation of the 1300 nm single mode fiber while operating in the 780 nm wavelength region. 3. Development of a low cost pseudo-wavelength division multiplexer for 1300 nm single mode/780 nm multimode operation and a low cost dual mode 50/50, 780 nm splitter using 1300 nm fiber. Details will be given of the design criteria and solution in terms of optimized design. Results of the performance of several prototype devices will be given with indications of the merits of this approach and where further development effort should be applied.

Slow-light enhanced absorption in a hollow-core fiber

DEFF Research Database (Denmark)

Grgic, Jure; Xiao, Sanshui; Mørk, Jesper

2010-01-01

Light traversing a hollow-core photonic band-gap fiber may experience multiple reflections and thereby a slow-down and enhanced optical path length. This offers a technologically interesting way of increasing the optical absorption of an otherwise weakly absorbing material which can infiltrate...

Sub-bandgap response of graphene/SiC Schottky emitter bipolar phototransistor examined by scanning photocurrent microscopy

Science.gov (United States)

Barker, Bobby G., Jr.; Chava, Venkata Surya N.; Daniels, Kevin M.; Chandrashekhar, M. V. S.; Greytak, Andrew B.

2018-01-01

Graphene layers grown epitaxially on SiC substrates are attractive for a variety of sensing and optoelectronic applications because the graphene acts as a transparent, conductive, and chemically responsive layer that is mated to a wide-bandgap semiconductor with large breakdown voltage. Recent advances in control of epitaxial growth and doping of SiC epilayers have increased the range of electronic device architectures that are accessible with this system. In particular, a recently-introduced Schottky-emitter bipolar phototransistor (SEPT) based on an epitaxial graphene (EG) emitter grown on a p-SiC base epilayer has been found to exhibit a maximum common emitter current gain of 113 and a UV responsivity of 7.1 A W-1. The behavior of this device, formed on an n +-SiC substrate that serves as the collector, was attributed to a very large minority carrier injection efficiency at the EG/p-SiC Schottky contact. This large minority carrier injection efficiency is in turn related to the large built-in potential found at a EG/p-SiC Schottky junction. The high performance of this device makes it critically important to analyze the sub bandgap visible response of the device, which provides information on impurity states and polytype inclusions in the crystal. Here, we employ scanning photocurrent microscopy (SPCM) with sub-bandgap light as well as a variety of other techniques to clearly demonstrate a localized response based on the graphene transparent electrode and an approximately 1000-fold difference in responsivity between 365 nm and 444 nm excitation. A stacking fault propagating from the substrate/epilayer interface, assigned as a single layer of the 8H-SiC polytype within the 4H-SiC matrix, is found to locally increase the photocurrent substantially. The discovery of this polytype heterojunction opens the potential for further development of heteropolytype devices based on the SEPT architecture.

Space-coiling fractal metamaterial with multi-bandgaps on subwavelength scale

Science.gov (United States)

Man, Xianfeng; Liu, Tingting; Xia, Baizhan; Luo, Zhen; Xie, Longxiang; Liu, Jian

2018-06-01

Acoustic metamaterials are remarkably different from conventional materials, as they can flexibly manipulate and control the propagation of sound waves. Unlike the locally resonant metamaterials introduced in earlier studies, we designed an ultraslow artificial structure with a sound speed much lower than that in air. In this paper, the space-coiling approach is proposed for achieving artificial metamaterial for extremely low-frequency airborne sound. In addition, the self-similar fractal technique is utilized for designing space-coiling Mie-resonance-based metamaterials (MRMMs) to obtain a band-dispersive spectrum. The band structures of two-dimensional (2D) acoustic metamaterials with different fractal levels are illustrated using the finite element method. The low-frequency bandgap can easily be formed, and multi-bandgap properties are observed in high-level fractals. Furthermore, the designed MRMMs with higher order fractal space coiling shows a good robustness against irregular arrangement. Besides, the proposed artificial structure was found to modify and control the radiation field arbitrarily. Thus, this work provides useful guidelines for the design of acoustic filtering devices and acoustic wavefront shaping applications on the subwavelength scale.

Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions

KAUST Repository

Awan, Saif Ullah; Hasanain, S. K.; Hassnain Jaffari, G.; Anjum, Dalaver H.; Qurashi, Umar S.

2014-01-01

Microstructural and optical properties of Zn1-yLiyO (0.00 ≤y ≤0.10) nanoparticles are investigated. Li incorporation leads to substantial changes in the structural characterization. From micro-structural analysis, no secondary phases or clustering of Li was detected. Elemental maps confirmed homogeneous distribution of Li in ZnO. Sharp UV peak due to the recombination of free exciton and defects based luminescence broad visible band was observed. The transition from the conduction band to Zinc vacancy defect level in photoluminescence spectra is found at 518±2.5nm. The yellow luminescence was observed and attributed to Li related defects in doped samples. With increasing Li doping, a decrease in energy bandgap was observed in the range 3.26±0.014 to 3.17±0.018eV. The bandgap narrowing behavior is explained in terms of the band tailing effect due to structural disorder, carrier-impurities, carrier-carrier, and carrier-phonon interactions. Tuning of the bandgap energy in this class of wide bandgap semiconductor is very important for room temperature spintronics applications and optical devices. © 2014 AIP Publishing LLC.

Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions

KAUST Repository

Awan, Saif Ullah

2014-08-28

Microstructural and optical properties of Zn1-yLiyO (0.00 ≤y ≤0.10) nanoparticles are investigated. Li incorporation leads to substantial changes in the structural characterization. From micro-structural analysis, no secondary phases or clustering of Li was detected. Elemental maps confirmed homogeneous distribution of Li in ZnO. Sharp UV peak due to the recombination of free exciton and defects based luminescence broad visible band was observed. The transition from the conduction band to Zinc vacancy defect level in photoluminescence spectra is found at 518±2.5nm. The yellow luminescence was observed and attributed to Li related defects in doped samples. With increasing Li doping, a decrease in energy bandgap was observed in the range 3.26±0.014 to 3.17±0.018eV. The bandgap narrowing behavior is explained in terms of the band tailing effect due to structural disorder, carrier-impurities, carrier-carrier, and carrier-phonon interactions. Tuning of the bandgap energy in this class of wide bandgap semiconductor is very important for room temperature spintronics applications and optical devices. © 2014 AIP Publishing LLC.

Design, Manufacturing and Experimental Validation of Optical Fiber Sensors Based Devices for Structural Health Monitoring

Directory of Open Access Journals (Sweden)

Angela CORICCIATI

2016-06-01

Full Text Available The use of optical fiber sensors is a promising and rising technique used for Structural Health Monitoring (SHM, because permit to monitor continuously the strain and the temperature of the structure where they are applied. In the present paper three different types of smart devices, that are composite materials with an optical fiber sensor embedded inside them during the manufacturing process, are described: Smart Patch, Smart Rebar and Smart Textile, which are respectively a plate for local exterior intervention, a rod for shear and flexural interior reinforcement and a textile for an external whole application. In addition to the monitoring aim, the possible additional function of these devices could be the reinforcement of the structures where they are applied. In the present work, after technology manufacturing description, the experimental laboratory characterization of each device is discussed. At last, smart devices application on medium scale masonry walls and their validation by mechanical tests is described.

Wide Bandgap Extrinsic Photoconductive Switches

Energy Technology Data Exchange (ETDEWEB)

Sullivan, James S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2013-07-03

Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

Hibiscus fiber carbon for fuel cell device material

International Nuclear Information System (INIS)

Nanik Indayaningsih; Anne Zulfia; Dedi Priadi; Suprapedi

2010-01-01

The objective of this research is carbon of hibiscus fibers for the application as basic material of fuel cell device. The carbon is made using a pyrolysis process in inert gas (nitrogen) for 1 hour at temperature of 500 °C, 700 °C and 900 °C. The X-Ray Diffractometer (XRD), Scanning Electron Microscope (SEM) and Impedance-Capacitance-Resistance-meter are used to find out the microstructure, morphology and electrical properties respectively. The results of the experiment showed that the carbon had a structure of amorphous, and as the semiconductor material the electrical conductivity was 5 x 10"-"5 S.cm"-"1 to 4.9 x 10"-"5 S.cm"-"1 increasing in accordance with the pyrolysis temperature. The morphology resembled to plaited mats constructed by porous fibers having width of 50 µm to 300 µm, thickness of 25 µm to 35 µm, and the porous size of 0.5 µm to 5 µm. This morphology enables carbon to be applied as a candidate for a basic material of the Proton Exchange Membrane Fuel Cell. (author)

Bandgap Optimization of Perovskite Semiconductors for Photovoltaic Applications.

Science.gov (United States)

Xiao, Zewen; Zhou, Yuanyuan; Hosono, Hideo; Kamiya, Toshio; Padture, Nitin P

2018-02-16

The bandgap is the most important physical property that determines the potential of semiconductors for photovoltaic (PV) applications. This Minireview discusses the parameters affecting the bandgap of perovskite semiconductors that are being widely studied for PV applications, and the recent progress in the optimization of the bandgaps of these materials. Perspectives are also provided for guiding future research in this area. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Innovative architecture of switching device for expanding the applications in fiber to the home (FTTH)

Science.gov (United States)

Mahmoud, Mohamed; Fayed, Heba A.; Aly, Moustafa H.; Aboul Seoud, A. K.

2011-08-01

A new device, optical cross add drop multiplexer (OXADM), is proposed and analyzed. It uses the combination concept of optical add drop multiplexer (OADM) and optical cross connect (OXC). It enables a wavelength switch while implementing add and drop functions simultaneously. So, it expands the applications in fiber to the home (FTTH) and optical core networks. A very high isolation crosstalk level (~ 60 dB) is achieved. Also, a bidirectional OXADM and N×N OXADM are proposed. Finally, a multistage OXADM is presented making some sort of wavelength buffering. To make these devices operate more efficient, tunable fiber Bragg gratings (TFBGs) switches are used to control the operation mechanism.

Transmission electron microscopy of InP-based compound semiconductor materials and devices

International Nuclear Information System (INIS)

Chu, S.N.G.

1990-01-01

InP/InGaAsP-based heteroepitaxial structures constitute the major optoelectronic devices for state-of-the-art long wavelength optical fiber communication system.s Future advanced device structures will require thin heteroepitaxial quantum wells and superlattices a few tens of angstrom or less in thickness, and lateral dimensions ranging from a few tens angstrom for quantum dots and wires to a few μm in width for buried heterostructure lasers. Due to the increasing complexity of the device structure required by band-gap engineering, the performance of these devices becomes susceptible to any lattice imperfections present in the structure. Transmission electron microscopy (TEM), therefore, becomes the most important technique in characterizing the structural integrity of these materials. Cross-section transmission electron microscopy (XTEM) not only provides the necessary geometric information on the device structure; a careful study of the materials science behind the observed lattice imperfections provides directions for optimization of both the epitaxial growth parameters and device processing conditions. Furthermore, for device reliability studies, TEM is the only technique that unambiguously identifies the cause of device degradation. In this paper, the authors discuss areas of application of various TEM techniques, describe the TEM sample preparation technique, and review case studies to demonstrate the power of the TEM technique

Spectrally-engineered solar thermal photovoltaic devices

Science.gov (United States)

Lenert, Andrej; Bierman, David; Chan, Walker; Celanovic, Ivan; Soljacic, Marin; Wang, Evelyn N.; Nam, Young Suk; McEnaney, Kenneth; Kraemer, Daniel; Chen, Gang

2018-03-27

A solar thermal photovoltaic device, and method of forming same, includes a solar absorber and a spectrally selective emitter formed on either side of a thermally conductive substrate. The solar absorber is configured to absorb incident solar radiation. The solar absorber and the spectrally selective emitter are configured with an optimized emitter-to-absorber area ratio. The solar thermal photovoltaic device also includes a photovoltaic cell in thermal communication with the spectrally selective emitter. The spectrally selective emitter is configured to permit high emittance for energies above a bandgap of the photovoltaic cell and configured to permit low emittance for energies below the bandgap.

Wide bandgap engineering of (AlGa)2O3 films

International Nuclear Information System (INIS)

Zhang, Fabi; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Guo, Qixin; Arita, Makoto

2014-01-01

Bandgap tunable (AlGa) 2 O 3 films were deposited on sapphire substrates by pulsed laser deposition (PLD). The deposited films are of high transmittance as measured by spectrophotometer. The Al content in films is almost the same as that in targets. The measurement of bandgap energies by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy is proved to be valid for determining the bandgap of (AlGa) 2 O 3 films as it is in good agreement with the bandgap values from transmittance spectra. The measured bandgap of (AlGa) 2 O 3 films increases continuously with the Al content covering the whole Al content range from about 5 to 7 eV, indicating PLD is a promising growth technology for growing bandgap tunable (AlGa) 2 O 3 films.

Origin of unusual bandgap shift and dual emission in organic-inorganic lead halide perovskites.

Science.gov (United States)

Dar, M Ibrahim; Jacopin, Gwénolé; Meloni, Simone; Mattoni, Alessandro; Arora, Neha; Boziki, Ariadni; Zakeeruddin, Shaik Mohammed; Rothlisberger, Ursula; Grätzel, Michael

2016-10-01

Emission characteristics of metal halide perovskites play a key role in the current widespread investigations into their potential uses in optoelectronics and photonics. However, a fundamental understanding of the molecular origin of the unusual blueshift of the bandgap and dual emission in perovskites is still lacking. In this direction, we investigated the extraordinary photoluminescence behavior of three representatives of this important class of photonic materials, that is, CH 3 NH 3 PbI 3 , CH 3 NH 3 PbBr 3 , and CH(NH 2 ) 2 PbBr 3 , which emerged from our thorough studies of the effects of temperature on their bandgap and emission decay dynamics using time-integrated and time-resolved photoluminescence spectroscopy. The low-temperature (photoluminescence of CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 reveals two distinct emission peaks, whereas that of CH(NH 2 ) 2 PbBr 3 shows a single emission peak. Furthermore, irrespective of perovskite composition, the bandgap exhibits an unusual blueshift by raising the temperature from 15 to 300 K. Density functional theory and classical molecular dynamics simulations allow for assigning the additional photoluminescence peak to the presence of molecularly disordered orthorhombic domains and also rationalize that the unusual blueshift of the bandgap with increasing temperature is due to the stabilization of the valence band maximum. Our findings provide new insights into the salient emission properties of perovskite materials, which define their performance in solar cells and light-emitting devices.

Optimization and experimental validation of stiff porous phononic plates for widest complete bandgap of mixed fundamental guided wave modes

Science.gov (United States)

Hedayatrasa, Saeid; Kersemans, Mathias; Abhary, Kazem; Uddin, Mohammad; Van Paepegem, Wim

2018-01-01

Phononic crystal plates (PhPs) have promising application in manipulation of guided waves for design of low-loss acoustic devices and built-in acoustic metamaterial lenses in plate structures. The prominent feature of phononic crystals is the existence of frequency bandgaps over which the waves are stopped, or are resonated and guided within appropriate defects. Therefore, maximized bandgaps of PhPs are desirable to enhance their phononic controllability. Porous PhPs produced through perforation of a uniform background plate, in which the porous interfaces act as strong reflectors of wave energy, are relatively easy to produce. However, the research in optimization of porous PhPs and experimental validation of achieved topologies has been very limited and particularly focused on bandgaps of flexural (asymmetric) wave modes. In this paper, porous PhPs are optimized through an efficient multiobjective genetic algorithm for widest complete bandgap of mixed fundamental guided wave modes (symmetric and asymmetric) and maximized stiffness. The Pareto front of optimization is analyzed and variation of bandgap efficiency with respect to stiffness is presented for various optimized topologies. Selected optimized topologies from the stiff and compliant regimes of Pareto front are manufactured by water-jetting an aluminum plate and their promising bandgap efficiency is experimentally observed. An optimized Pareto topology is also chosen and manufactured by laser cutting a Plexiglas (PMMA) plate, and its performance in self-collimation and focusing of guided waves is verified as compared to calculated dispersion properties.

Analysis of multifunctional piezoelectric metastructures for low-frequency bandgap formation and energy harvesting

Science.gov (United States)

Sugino, C.; Erturk, A.

2018-05-01

Vibration-based energy harvesting is a growing field for generating low-power electricity to use in wireless electronic devices, such as the sensor networks used in structural health monitoring applications. Locally resonant metastructures, which are structures that comprise locally resonant metamaterial components, enable bandgap formation at wavelengths much longer than the lattice size, for critical applications such as low-frequency vibration attenuation in flexible structures. This work aims to bridge the domains of energy harvesting and locally resonant metamaterials to form multifunctional structures that exhibit both low-power electricity generation and vibration attenuation capabilities. A fully coupled electromechanical modeling framework is developed for two characteristic systems and their modal analysis is presented. Simulations are performed to explore the vibration and electrical power frequency response maps for varying electrical load resistance, and optimal loading conditions are presented. Case studies are presented to understand the interaction of bandgap formation and energy harvesting capabilities of this new class of multifunctional energy-harvesting locally resonant metastructures. It is shown that useful energy can be harvested from locally resonant metastructures without significantly diminishing their dramatic vibration attenuation in the locally resonant bandgap. Thus, integrating energy harvesters into a locally resonant metastructure enables a new potential for multifunctional locally resonant metastructures that can host self-powered sensors.

Modeling loss and backscattering in a photonic-bandgap fiber using strong perturbation

Science.gov (United States)

Zamani Aghaie, Kiarash; Digonnet, Michel J. F.; Fan, Shanhui

2013-02-01

We use coupled-mode theory with strong perturbation to model the loss and backscattering coefficients of a commercial hollow-core fiber (NKT Photonics' HC-1550-02 fiber) induced by the frozen-in longitudinal perturbations of the fiber cross section. Strong perturbation is used, for the first time to the best of our knowledge, because the large difference between the refractive indices of the two fiber materials (silica and air) makes conventional weak-perturbation less accurate. We first study the loss and backscattering using the mathematical description of conventional surface-capillary waves (SCWs). This model implicitly assumes that the mechanical waves on the core wall of a PBF have the same power spectral density (PSD) as the waves that develop on an infinitely thick cylindrical tube with the same diameter as the PBF core. The loss and backscattering coefficients predicted with this thick-wall SCW roughness are 0.5 dB/km and 1.1×10-10 mm-1, respectively. These values are more than one order of magnitude smaller than the measured values (20-30 dB/km and ~1.5×10-9 mm-1, respectively). This result suggests that the thick-wall SCW PSD is not representative of the roughness of our fiber. We found that this discrepancy occurs at least in part because the effect of the finite thickness of the silica membranes (only ~120 nm) is neglected. We present a new expression for the PSD that takes into account this finite thickness and demonstrates that the finite thickness substantially increases the roughness. The predicted loss and backscattering coefficients predicted with this thin-film SCW PSD are 30 dB/km and 1.3×10-9 mm-1, which are both close to the measured values. We also show that the thin-film SCW PSD accurately predicts the roughness PSD measured by others in a solid-core photonic-crystal fiber.

Ultra-large bandwidth hollow-core guiding in all-silica bragg fibers with nano-supports

DEFF Research Database (Denmark)

Vienne, Guillaume; Xu, Yong; Jakobsen, Christian

2004-01-01

We demonstrate a new class of hollow-core Bragg fibers that are composed of concentric cylindrical silica rings separated by nanoscale support bridges. We theoretically predict and experimentally observe hollow-core confinement over an octave frequency range. The bandwidth of bandgap guiding in t...... in this new class of Bragg fibers exceeds that of other hollow-core fibers reported in the literature. With only three rings of silica cladding layers, these Bragg fibers achieve propagation loss of the order of 1 dB/m....

High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters

Science.gov (United States)

Wanlass, Mark W [Golden, CO

2011-11-29

A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

Optical fiber stripper positioning apparatus

Science.gov (United States)

Fyfe, Richard W.; Sanchez, Jr., Amadeo

1990-01-01

An optical fiber positioning apparatus for an optical fiber stripping device is disclosed which is capable of providing precise axial alignment between an optical fiber to be stripped of its outer jacket and the cutting blades of a stripping device. The apparatus includes a first bore having a width approximately equal to the diameter of an unstripped optical fiber and a counter bore axially aligned with the first bore and dimensioned to precisely receive a portion of the stripping device in axial alignment with notched cutting blades within the stripping device to thereby axially align the notched cutting blades of the stripping device with the axis of the optical fiber to permit the notched cutting blades to sever the jacket on the optical fiber without damaging the cladding on the optical fiber. In a preferred embodiment, the apparatus further includes a fiber stop which permits determination of the length of jacket to be removed from the optical fiber.

Multidimensional microstructured photonic device based on all-solid waveguide array fiber and magnetic fluid

Directory of Open Access Journals (Sweden)

Miao Yinping

2016-11-01

Full Text Available An all-solid waveguide array fiber (WAF is one kind of special microstructured optical fiber in which the higher-index rods are periodically distributed in a low-index silica host to form the transverse two-dimensional photonic crystal. In this paper, one kind of multidimensional microstructured optical fiber photonic device is proposed by using electric arc discharge method to fabricate periodic tapers along the fiber axis. By tuning the applied magnetic field intensity, the propagation characteristics of the all-solid WAF integrated with magnetic fluid are periodically modulated in both radial and axial directions. Experimental results show that the wavelength changes little while the transmission loss increases for an applied magnetic field intensity range from 0 to 500 Oe. The magnetic field sensitivity is 0.055 dB/Oe within the linear range from 50 to 300 Oe. Meanwhile, the all-solid WAF has very similar thermal expansion coefficient for both high- and low-refractive index glasses, and thermal drifts have a little effect on the mode profile. The results show that the temperature-induced transmission loss is <0.3 dB from 26°C to 44°C. Further tuning coherent coupling of waveguides and controlling light propagation, the all-solid WAF would be found great potential applications to develop new micro-nano photonic devices for optical communications and optical sensing applications.

Fiber Bragg grating sensor-based communication assistance device

Science.gov (United States)

Padma, Srivani; Umesh, Sharath; Pant, Shweta; Srinivas, Talabattula; Asokan, Sundarrajan

2016-08-01

Improvements in emergency medicine in the form of efficient life supporting systems and intensive care have increased the survival rate in critically injured patients; however, in some cases, severe brain and spinal cord injuries can result in a locked-in syndrome or other forms of paralysis, and communication with these patients may become restricted or impossible. The present study proposes a noninvasive, real-time communication assistive methodology for those with restricted communication ability, employing a fiber Bragg grating (FBG) sensor. The communication assistive methodology comprises a breath pattern analyzer using an FBG sensor, which acquires the exhalation force that is converted into strain variations on a cantilever. The FBG breath pattern analyzer along with specific breath patterns, which are programmed to give specific audio output commands, constitutes the proposed fiber Bragg grating sensor-based communication assistive device. The basic communication can be carried out by instructing the patients with restricted communication ability to perform the specific breath patterns. The present approach is intended to be an alternative to the common approach of brain-computer interface in which an instrument is utilized for learning of brain responses.

Terahertz spectroscopy of three-dimensional photonic band-gap crystals

International Nuclear Information System (INIS)

Oezbay, E.; Michel, E.; Tuttle, G.; Biswas, R.; Ho, K.M.; Bostak, J.; Bloom, D.M.

1994-01-01

We have fabricated and built three-dimensional photonic band-gap crystals with band-gap frequencies larger than 500 GHz. We built the crystals by stacking micromachined (110) silicon wafers. The transmission and dispersion characteristics of the structures were measured by an all-electronic terahertz spectroscopy setup. The experimental results were in good agreement with theoretical calculations. To our knowledge, our new crystal has the highest reported photonic band-gap frequency

Tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge

Energy Technology Data Exchange (ETDEWEB)

Inaoka, Takeshi, E-mail: inaoka@phys.u-ryukyu.ac.jp; Furukawa, Takuro; Toma, Ryo; Yanagisawa, Susumu [Department of Physics and Earth Sciences, Faculty of Science, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 (Japan)

2015-09-14

By means of a hybrid density-functional method, we investigate the tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge. We consider [001], [111], and [110] uniaxial tensility and (001), (111), and (110) biaxial tensility. Under the condition of no normal stress, we determine both normal compression and internal strain, namely, relative displacement of two atoms in the primitive unit cell, by minimizing the total energy. We identify those strain types which can induce the band-gap transition, and evaluate the critical strain coefficient where the gap transition occurs. Either normal compression or internal strain operates unfavorably to induce the gap transition, which raises the critical strain coefficient or even blocks the transition. We also examine how each type of tensile strain decreases the band-gap energy, depending on its orientation. Our analysis clearly shows that synergistic operation of strain orientation and band anisotropy has a great influence on the gap transition and the gap energy.

Cross-correlated imaging of single-mode photonic crystal rod fiber with distributed mode filtering

DEFF Research Database (Denmark)

Laurila, Marko; Barankov, Roman; Jørgensen, Mette Marie

2013-01-01

Photonic crystal bandgap fibers employing distributed mode filtering design provide near diffraction-limited light outputs, a critical property of fiber-based high-power lasers. Microstructure of the fibers is tailored to achieve single-mode operation at specific wavelength by resonant mode...... identify regimes of resonant coupling between higher-order core modes and cladding band. We demonstrate a passive fiber design in which the higher-order modal content inside the single-mode guiding regime is suppressed by at least 20 dB even for significantly misaligned input-coupling configurations....

Efficient low bandgap polymer solar cell with ordered heterojunction defined by nanoimprint lithography.

Science.gov (United States)

Yang, Yi; Mielczarek, Kamil; Zakhidov, Anvar; Hu, Walter

2014-11-12

In this work, we demonstrate the feasibility of using nanoimprint lithography (NIL) to make efficient low bandgap polymer solar cells with well-ordered heterojunction. High quality low bandgap conjugated polymer poly[2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']-dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (PCPDTBT) nanogratings are fabricated using this technique for the first time. The geometry effect of PCPDTBT nanostructures on the solar cell performance is investigated by making PCPDTBT/C70 solar cells with different feature sizes of PCPDTBT nanogratings. It is found that the power conversion efficiency (PCE) increases with increasing nanograting height, PCPDTBT/C70 junction area, and decreasing nanograting width. We also find that NIL makes PCPDTBT chains interact more strongly and form an improved structural ordering. Solar cells made on the highest aspect ratio PCPDTBT nanostructures are among the best reported devices using the same material with a PCE of 5.5%.

78 FR 77166 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

Science.gov (United States)

2013-12-20

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-860] Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Request for Statements on the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY...

Using Protection Layers for a 2-Photon Water Splitting Device

DEFF Research Database (Denmark)

Seger, Brian; Mei, Bastian Timo; Frydendal, Rasmus

2015-01-01

The 2-photon tandem device for photocatalytic water splitting has been theoretically shown to provide a higher efficiency than a single photon device(1). This increased efficiency can be achieved by having one material optimized to absorb high energy photons (large bandgap) and another material...... optimized to absorb low energy photons (small bandgap). To a large degree this approach has been hindered by corrosion issues. In this talk I will first discuss how our computational screening of 2,400 materials showed that very few materials can efficiently absorb light without corroding in water splitting...

On the mechanism of bandgap formation in locally resonant finite elastic metamaterials

Science.gov (United States)

Sugino, Christopher; Leadenham, Stephen; Ruzzene, Massimo; Erturk, Alper

2016-10-01

Elastic/acoustic metamaterials made from locally resonant arrays can exhibit bandgaps at wavelengths much longer than the lattice size for various applications spanning from low-frequency vibration/sound attenuation to wave guiding and filtering in mechanical and electromechanical devices. For an effective use of such locally resonant metamaterial concepts in finite structures, it is required to bridge the gap between the lattice dispersion characteristics and modal behavior of the host structure with its resonators. To this end, we develop a novel argument for bandgap formation in finite-length elastic metamaterial beams, relying on the modal analysis and the assumption of infinitely many resonators. We show that the dual problem to wave propagation through an infinite periodic beam is the modal analysis of a finite beam with an infinite number of resonators. A simple formula that depends only on the resonator natural frequency and total mass ratio is derived for placing the bandgap in a desired frequency range, yielding an analytical insight and a rule of thumb for design purposes. A method for understanding the importance of a resonator location and mass is discussed in the context of a Riemann sum approximation of an integral, and a method for determining the optimal number of resonators for a given set of boundary conditions and target frequency is introduced. The simulations of the theoretical framework are validated by experiments for bending vibrations of a locally resonant cantilever beam.

High-Temperature, Wirebondless, Ultracompact Wide Bandgap Power Semiconductor Modules

Science.gov (United States)

Elmes, John

2015-01-01

Silicon carbide (SiC) and other wide bandgap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and ultrahigh power density for both space and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliable high-temperature device packaging technology. This Phase II project developed an ultracompact hybrid power module packaging technology based on the use of double lead frames and direct lead frame-to-chip transient liquid phase (TLP) bonding that allows device operation up to 450 degC. The new power module will have a very small form factor with 3-5X reduction in size and weight from the prior art, and it will be capable of operating from 450 degC to -125 degC. This technology will have a profound impact on power electronics and energy conversion technologies and help to conserve energy and the environment as well as reduce the nation's dependence on fossil fuels.

Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications

KAUST Repository

Amin, B.; Ahmad, Iftikhar; Maqbool, M.; Goumri-Said, S.; Ahmad, R.

2011-01-01

A theoretical study of Al1−xGaxN, based on the full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap,optical properties, and nonlinear behavior of the compound with the change in the Ga concentration. It is found that the bandgap decreases with the increase in Ga. A maximum value of 5.50 eV is determined for the bandgap of pure AlN, which reaches a minimum value of 3.0 eV when Al is completely replaced by Ga. The static index of refraction and dielectric constant decreases with the increase in the bandgap of the material, assigning a high index of refraction to pure GaN when compared to pure AlN. The refractive index drops below 1 for higher energy photons, larger than 14 eV. The group velocity of these photons is larger than the vacuum velocity of light. This astonishing result shows that at higher energies the optical properties of the material shifts from linear to nonlinear. Furthermore, frequency dependent reflectivity and absorption coefficients show that peak values of the absorption coefficient and reflectivity shift toward lower energy in the ultraviolet (UV) spectrum with the increase in Ga concentration. This comprehensive theoretical study of the optoelectronic properties predicts that the material can be effectively used in the optical devices working in the visible and UV spectrum.

Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications

KAUST Repository

Amin, B.

2011-01-19

A theoretical study of Al1−xGaxN, based on the full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap,optical properties, and nonlinear behavior of the compound with the change in the Ga concentration. It is found that the bandgap decreases with the increase in Ga. A maximum value of 5.50 eV is determined for the bandgap of pure AlN, which reaches a minimum value of 3.0 eV when Al is completely replaced by Ga. The static index of refraction and dielectric constant decreases with the increase in the bandgap of the material, assigning a high index of refraction to pure GaN when compared to pure AlN. The refractive index drops below 1 for higher energy photons, larger than 14 eV. The group velocity of these photons is larger than the vacuum velocity of light. This astonishing result shows that at higher energies the optical properties of the material shifts from linear to nonlinear. Furthermore, frequency dependent reflectivity and absorption coefficients show that peak values of the absorption coefficient and reflectivity shift toward lower energy in the ultraviolet (UV) spectrum with the increase in Ga concentration. This comprehensive theoretical study of the optoelectronic properties predicts that the material can be effectively used in the optical devices working in the visible and UV spectrum.

Direct Spectroscopy in Hollow Optical with Fiber-Based Optical Frequency Combs

Science.gov (United States)

2015-07-09

scheme is that the generation of carrier-envelope offset frequency f0 can be avoided, which reduces the system complexity . However, a high performance RF...Peterson, "Saturated absorption in acetylene and hydrogen cyanide in hollow-core photonic bandgap fibers," Opt. Express 13, 10475-10482 (2005). 56. C

Optimum design of band-gap beam structures

DEFF Research Database (Denmark)

Olhoff, Niels; Niu, Bin; Cheng, Gengdong

2012-01-01

The design of band-gap structures receives increasing attention for many applications in mitigation of undesirable vibration and noise emission levels. A band-gap structure usually consists of a periodic distribution of elastic materials or segments, where the propagation of waves is impeded...... or significantly suppressed for a range of external excitation frequencies. Maximization of the band-gap is therefore an obvious objective for optimum design. This problem is sometimes formulated by optimizing a parameterized design model which assumes multiple periodicity in the design. However, it is shown...... in the present paper that such an a priori assumption is not necessary since, in general, just the maximization of the gap between two consecutive natural frequencies leads to significant design periodicity. The aim of this paper is to maximize frequency gaps by shape optimization of transversely vibrating...

Direct writing of fiber optic components in photonic crystal fibers and other specialty fibers

Science.gov (United States)

Fernandes, Luis Andre; Sezerman, Omur; Best, Garland; Ng, Mi Li; Kane, Saidou

2016-04-01

Femtosecond direct laser writing has recently shown great potential for the fabrication of complex integrated devices in the cladding of optical fibers. Such devices have the advantage of requiring no bulk optical components and no breaks in the fiber path, thus reducing the need for complicated alignment, eliminating contamination, and increasing stability. This technology has already found applications using combinations of Bragg gratings, interferometers, and couplers for the fabrication of optical filters, sensors, and power monitors. The femtosecond laser writing method produces a local modification of refractive index through non-linear absorption of the ultrafast laser pulses inside the dielectric material of both the core and cladding of the fiber. However, fiber geometries that incorporate air or hollow structures, such as photonic crystal fibers (PCFs), still present a challenge since the index modification regions created by the writing process cannot be generated in the hollow regions of the fiber. In this work, the femtosecond laser method is used together with a pre-modification method that consists of partially collapsing the hollow holes using an electrical arc discharge. The partial collapse of the photonic band gap structure provides a path for femtosecond laser written waveguides to couple light from the core to the edge of the fiber for in-line power monitoring. This novel approach is expected to have applications in other specialty fibers such as suspended core fibers and can open the way for the integration of complex devices and facilitate miniaturization of optical circuits to take advantage of the particular characteristics of the PCFs.

Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials.

Science.gov (United States)

Usman, Muhammad; Mendiratta, Shruti; Lu, Kuang-Lieh

2017-02-01

Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Micromachined millimeter-wave photonic band-gap crystals

International Nuclear Information System (INIS)

Oezbay, E.; Michel, E.; Tuttle, G.; Biswas, R.; Sigalas, M.; Ho, K.

1994-01-01

We have developed a new technique for fabricating three-dimensional photonic band-gap crystals. Our method utilizes an orderly stacking of micromachined (110) silicon wafers to build the periodic structure. A structure with a full three-dimensional photonic band gap centered near 100 GHz was measured, with experimental results in good agreement with theoretical predictions. This basic approach described should be extendable to build structures with photonic band-gap frequencies ranging from 30 GHz to 3 THz

Realization of 7-cell hollow-core photonic crystal fibers with low loss in the region between 1.4 μm and 2.3 μm

DEFF Research Database (Denmark)

Lyngsøe, Jens Kristian; Mangan, Brian Joseph; Jakobsen, C.

2009-01-01

Five 7-cell core hollow-core fibers with photonic bandgap spectral positions between 1.4 μm and 2.3 μm were fabricated. The loss follows the ≈ λ-3 dependency previously reported [1] with a minimum measured loss of 9.5 dB/km at 1992 nm.......Five 7-cell core hollow-core fibers with photonic bandgap spectral positions between 1.4 μm and 2.3 μm were fabricated. The loss follows the ≈ λ-3 dependency previously reported [1] with a minimum measured loss of 9.5 dB/km at 1992 nm....

Tunable radiation emitting semiconductor device

NARCIS (Netherlands)

2009-01-01

A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

Graphene nano-devices and nano-composites for structural, thermal and sensing applications

Science.gov (United States)

Yavari, Fazel

In this dissertation we have developed graphene-based nano-devices for applications in integrated circuits and gas sensors; as well as graphene-based nano-composites for applications in structures and thermal management. First, we have studied the bandgap of graphene for semiconductor applications. Graphene as a zero-bandgap material cannot be used in the semiconductor industry unless an effective method is developed to open the bandgap in this material. We have demonstrated that a bandgap of 0.206 eV can be opened in graphene by adsorption of water vapor molecules on its surface. Water molecules break the molecular symmetries of graphene resulting in a significant bandgap opening. We also illustrate that the lack of bandgap in graphene can be used to our advantage by making sensors that are able to detect low concentrations of gas molecules mixed in air. We have shown that 1-2 layers of graphene synthesized by chemical vapor deposition enables detection of trace amounts of NO 2 and NH3 in air at room temperature and atmospheric pressure. The gas species are detected by monitoring changes in electrical resistance of the graphene film due to gas adsorption. The sensor response time is inversely proportional to the gas concentration. Heating the film expels chemisorbed molecules from the graphene surface enabling reversible operation. The detection limits of ~100 parts-per-billion (ppb) for NO2 and ~500 ppb for NH3 obtained using this device are markedly superior to commercially available NO2 and NH3 detectors. This sensor is fabricated using individual graphene sheets that are exquisitely sensitive to the chemical environment. However, the fabrication and operation of devices that use individual nanostructures for sensing is complex, expensive and suffers from poor reliability due to contamination and large variability from sample-to-sample. To overcome these problems we have developed a gas sensor based on a porous 3D network of graphene sheets called graphene foam

Developing a compact multiple laser diode combiner with a single fiber stub output for handheld IoT devices

Science.gov (United States)

Lee, Minseok; June, Seunghyeok; Kim, Sehwan

2018-01-01

Many biomedical applications require an efficient combination and localization of multiple discrete light sources ( e.g., fluorescence and absorbance imaging). We present a compact 6 channel combiner that couples the output of independent solid-state light sources into a single 400-μm-diameter fiber stub for handheld Internet of Things (IoT) devices. We demonstrate average coupling efficiencies > 80% for each of the 6 laser diodes installed into the prototype. The design supports the use of continuous wave and intensity-modulated laser diodes. This fiber-stub-type beam combiner could be used to construct custom multi-wavelength sources for tissue oximeters, microscopes and molecular imaging technologies. In order to validate its suitability, we applied the developed fiber-stub-type beam combiner to a multi-wavelength light source for a handheld IoT device and demonstrated its feasibility for smart healthcare through a tumor-mimicking silicon phantom.

Silicon photonics for multicore fiber communication

DEFF Research Database (Denmark)

Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

2016-01-01

We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices.......We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

Fullerene-based low-density superhard materials with tunable bandgaps

Science.gov (United States)

Cao, Ai-Hua; Zhao, Wen-Juan; Gan, Li-Hua

2018-06-01

Four carbon allotropes built from tetrahedral symmetrical fullerenes C28 and C40 are predicted to be superhard materials with mass density around that of water, and all of them are porous semiconductors. Both the bandgaps and hardness decrease with increasing ratio of sp2 hybridized carbon atoms. The mechanical and thermodynamic stabilities of C28- and C40-based allotropes at zero pressure are confirmed by a variety of state-of-the-art theoretical calculations. The evolution trend of bandgap found here suggests that one can obtain low-density hard materials with tunable bandgaps by substituting the carbon atom in diamond with different Td-symmetrical non-IPR fullerene Cn.

Medium-Bandgap Small-Molecule Donors Compatible with Both Fullerene and Nonfullerene Acceptors.

Science.gov (United States)

Huo, Yong; Yan, Cenqi; Kan, Bin; Liu, Xiao-Fei; Chen, Li-Chuan; Hu, Chen-Xia; Lau, Tsz-Ki; Lu, Xinhui; Sun, Chun-Lin; Shao, Xiangfeng; Chen, Yongsheng; Zhan, Xiaowei; Zhang, Hao-Li

2018-03-21

Much effort has been devoted to the development of new donor materials for small-molecule organic solar cells due to their inherent advantages of well-defined molecular weight, easy purification, and good reproducibility in photovoltaic performance. Herein, we report two small-molecule donors that are compatible with both fullerene and nonfullerene acceptors. Both molecules consist of an (E)-1,2-di(thiophen-2-yl)ethane-substituted (TVT-substituted) benzo[1,2-b:4,5-b']dithiophene (BDT) as the central unit, and two rhodanine units as the terminal electron-withdrawing groups. The central units are modified with either alkyl side chains (DRBDT-TVT) or alkylthio side chains (DRBDT-STVT). Both molecules exhibit a medium bandgap with complementary absorption and proper energy level offset with typical acceptors like PC 71 BM and IDIC. The optimized devices show a decent power conversion efficiency (PCE) of 6.87% for small-molecule organic solar cells and 6.63% for nonfullerene all small-molecule organic solar cells. Our results reveal that rationally designed medium-bandgap small-molecule donors can be applied in high-performance small-molecule organic solar cells with different types of acceptors.

Freedom from band-gap slavery: from diode lasers to quantum cascade lasers

Science.gov (United States)

Capasso, Federico

2010-02-01

Semiconductor heterostructure lasers, for which Alferov and Kromer received part of the Nobel Prize in Physics in 2000, are the workhorse of technologies such as optical communications, optical recording, supermarket scanners, laser printers and fax machines. They exhibit high performance in the visible and near infrared and rely for their operation on electrons and holes emitting photons across the semiconductor bandgap. This mechanism turns into a curse at longer wavelengths (mid-infrared) because as the bandgap, shrinks laser operation becomes much more sensitive to temperature, material defects and processing. Quantum Cascade Laser (QCL), invented in 1994, rely on a radically different process for light emission. QCLs are unipolar devices in which electrons undergo transitions between quantum well energy levels and are recycled through many stages emitting a cascade of photons. Thus by suitable tailoring of the layers' thickness, using the same heterostructure material, they can lase across the molecular fingerprint region from 3 to 25 microns and beyond into the far-infrared and submillimiter wave spectrum. High power cw room temperature QCLs and QCLs with large continuous single mode tuning range have found many applications (infrared countermeasures, spectroscopy, trace gas analysis and atmospheric chemistry) and are commercially available. )

Efficient Sub-Bandgap Light Absorption and Signal Amplification in Silicon Photodetectors

Science.gov (United States)

Liu, Yu-Hsin

This thesis focuses on two areas in silicon photodetectors, the first being enhancing the sub-bandgap light absorption of IR wavelenghts in silicon, and the second being intrinsic signal amplification in silicon photodetectors. Both of these are achieved using heavily doped p-n junction devices which create localized states that relax the k-selection rule of indirect bandgap material. The probability of transitions between impurity band and the conduction/valence band would be much more efficient than the one between band-to-band transition. The waveguide-coupled epitaxial p-n photodetector was demonstrated for 1310 nm wavelength detection. Incorporated with the Franz-Keldysh effect and the quasi-confined epitaxial layer design, an absorption coefficient around 10 cm-1 has been measured and internal quantum efficiency nearly 100% at -2.5V. The absorption coefficient is calculated from the wave function of the electron and hole in p-n diode. The heavily doped impurity wave function can be formulated as a delta function, and the quasi-confined conduction band energy states, and the wave function on each level can be obtained from the Silvaco software. The calculated theoretical absorption coefficient increases with the increasing applied bias and the doping concentration, which matches the experimental results. To solve the issues of large excess noise and high operation bias for avalanche photodiodes based on impact ionization, I presented a detector using the Cycling Excitation Process (CEP) for signal amplification. This can be realized in a heavily doped and highly compensated Si p-n junction, showing ultra high gain about 3000 at very low bias (<4 V), and possessing an intrinsic, phonon-mediated regulation process to keep the device stable without any quenching device required in today's Geiger-mode avalanche detectors. The CEP can be formulated with the rate equations in conduction bands and impurity states. The gain expression, which is a function of the

Research on bandgaps in two-dimensional phononic crystal with two resonators.

Science.gov (United States)

Gao, Nansha; Wu, Jiu Hui; Yu, Lie

2015-02-01

In this paper, the bandgap properties of a two-dimensional phononic crystal with the two resonators is studied and embedded in a homogenous matrix. The resonators are not connected with the matrix but linked with connectors directly. The dispersion relationship, transmission spectra, and displacement fields of the eigenmodes of this phononic crystal are studied with finite-element method. In contrast to the phononic crystals with one resonators and hollow structure, the proposed structures with two resonators can open bandgaps at lower frequencies. This is a very interesting and useful phenomenon. Results show that, the opening of the bandgaps is because of the local resonance and the scattering interaction between two resonators and matrix. An equivalent spring-pendulum model can be developed in order to evaluate the frequencies of the bandgap edge. The study in this paper is beneficial to the design of opening and tuning bandgaps in phononic crystals and isolators in low-frequency range. Copyright © 2014 Elsevier B.V. All rights reserved.

Two-phase jet impingement cooling for high heat flux wide band-gap devices using multi-scale porous surfaces

International Nuclear Information System (INIS)

Joshi, Shailesh N.; Dede, Ercan M.

2017-01-01

Highlights: • Jet impingement with phase change on multi-scale porous surfaces is investigated. • Porous coated flat, pin-fin, open tunnel, and closed tunnel structures are studied. • Boiling curve, heat transfer coefficient, and pressure drop metrics are reported. • Flow visualization shows vapor removal from the surface is a key aspect of design. • The porous coated pin-fin surface exhibits superior two-phase cooling performance. - Abstract: In the future, wide band-gap (WBG) devices such as silicon carbide and gallium nitride will be widely used in automotive power electronics due to performance advantages over silicon-based devices. The high heat fluxes dissipated by WBG devices pose extreme cooling challenges that demand the use of advanced thermal management technologies such as two-phase cooling. In this light, we describe the performance of a submerged two-phase jet impingement cooler in combination with porous coated heat spreaders and multi-jet orifices. The cooling performance of four different porous coated structures was evaluated using R-245fa as the coolant at sub-cooling of 5 K. The results show that the boiling performance of a pin-fin heat spreader is the highest followed by that for an open tunnel (OPT), closed tunnel (CLT), and flat heat spreader. Furthermore, the flat heat spreader demonstrated the lowest critical heat flux (CHF), while the pin-fin surface sustained a heat flux of 218 W/cm 2 without reaching CHF. The CHF values of the OPT and CLT surfaces were 202 W/cm 2 and 194 W/cm 2 , respectively. The pin-fin heat spreader has the highest two-phase heat transfer coefficient of 97,800 W/m 2 K, while the CLT surface has the lowest heat transfer coefficient of 69,300 W/m 2 K, both at a heat flux of 165 W/cm 2 . The variation of the pressure drop of all surfaces is similar for the entire range of heat fluxes tested. The flat heat spreader exhibited the least pressure drop, 1.73 kPa, while the CLT surface had the highest, 2.17 kPa at a

Cladding defects in hollow core fibers for surface mode suppression and improved birefringence

DEFF Research Database (Denmark)

Michieletto, Mattia; Lyngso, J. K.; Lægsgaard, Jesper

2014-01-01

We demonstrate a novel polarization maintaining hollow-core photonic bandgap fiber geometry that reduces the impact of surface modes on fiber transmission. The cladding structure is modified with a row of partially collapsed holes to strip away unwanted surface modes. A theoretical investigation...... of the surface mode stripping is presented and compared to the measured performance of four 7-cells core fibers that were drawn with different collapse ratio of the defects. The varying pressure along the defect row in the cladding during drawing introduces an ellipticity of the core. This, combined...... with the presence of antiresonant features on the core wall, makes the fibers birefringent, with excellent polarization maintaining properties. (C) 2014 Optical Society of America...

Fiber optic gas detection system for health monitoring of oil-filled transformer

Science.gov (United States)

Ho, H. L.; Ju, J.; Jin, W.

2009-10-01

This paper reports the development of a fiber-optic gas detection system capable of detecting three types of dissolved fault gases in oil-filled power transformers or equipment. The system is based on absorption spectroscopy and the target gases include acetylene (C2H2), methane (CH4) and ethylene (C2H4). Low-cost multi-pass sensor heads using fiber coupled micro-optic cells are employed for which the interaction length is up to 4m. Also, reference gas cells made of photonic bandgap (PBG) fiber are implemented. The minimum detectable gas concentrations for methane, acetylene and ethylene are 5ppm, 2ppm and 50ppm respectively.

New Light-Harvesting Materials Using Accurate and Efficient Bandgap Calculations

DEFF Research Database (Denmark)

Castelli, Ivano Eligio; Hüser, Falco; Pandey, Mohnish

2014-01-01

Electronic bandgap calculations are presented for 2400 experimentally known materials from the Materials Project database and the bandgaps, obtained with different types of functionals within density functional theory and (partial) self-consistent GW approximation, are compared for 20 randomly...

Tunable Bandgap and Optical Properties of Black Phosphorene Nanotubes

Directory of Open Access Journals (Sweden)

Chunmei Li

2018-02-01

Full Text Available Black phosphorus (BP, a new two-dimensional material, has been the focus of scientists’ attention. BP nanotubes have potential in the field of optoelectronics due to their low-dimensional effects. In this work, the bending strain energy, electronic structure, and optical properties of BP nanotubes were investigated by using the first-principles method based on density functional theory. The results show that these properties are closely related to the rolling direction and radius of the BP nanotube. All the calculated BP nanotube properties show direct bandgaps, and the BP nanotubes with the same rolling direction express a monotone increasing trend in the value of bandgap with a decrease in radius, which is a stacking effect of the compression strain on the inner atoms and the tension strain on the outer atoms. The bending strain energy of the zigzag phosphorene nanotubes (zPNTs is higher than that of armchair phosphorene nanotubes (aPNT with the same radius of curvature due to the anisotropy of the BP’s structure. The imaginary part of the dielectric function, the absorption range, reflectivity, and the imaginary part of the refractive index of aPNTs have a wider range than those of zPNTs, with higher values overall. As a result, tunable BP nanotubes are suitable for optoelectronic devices, such as lasers and diodes, which function in the infrared and ultra-violet regions, and for solar cells and photocatalysis.

Analysis of phononic bandgap structures with dissipation

DEFF Research Database (Denmark)

Andreassen, Erik; Jensen, Jakob Søndergaard

2013-01-01

and longer wavelengths, we show that the two formulations produce nearly identical results in terms of propagation constant and wave decay. We use the k(ω)-formulation to compute loss factors with dissipative bandgap materials for steady-state wave propagation and create simplified diagrams that unify...... the spatial loss factor from dissipative and bandgap effects. Additionally, we demonstrate the applicability of the k(ω)-formulation for the computation of the band diagram for viscoelastic composites and compare the computed loss factors for low frequency wave propagation to existing results based on quasi...

Optofluidic in-fiber interferometer based on hollow optical fiber with two cores.

Science.gov (United States)

Yuan, Tingting; Yang, Xinghua; Liu, Zhihai; Yang, Jun; Li, Song; Kong, Depeng; Qi, Xiuxiu; Yu, Wenting; Long, Qunlong; Yuan, Libo

2017-07-24

We demonstrate a novel integrated optical fiber interferometer for in-fiber optofluidic detection. It is composed of a specially designed hollow optical fiber with a micro-channel and two cores. One core on the inner surface of the micro-channel is served as sensing arm and the other core in the annular cladding is served as reference arm. Fusion-and-tapering method is employed to couple light from a single mode fiber to the hollow optical fiber in this device. Sampling is realized by side opening a microhole on the surface of the hollow optical fiber. Under differential pressure between the end of the hollow fiber and the microhole, the liquids can form steady microflows in the micro-channel. Simultaneously, the interference spectrum of the interferometer device shifts with the variation of the concentration of the microfluid in the channel. The optofluidic in-fiber interferometer has a sensitivity of refractive index around 2508 nm/RIU for NaCl. For medicine concentration detection, its sensitivity is 0.076 nm/mmolL -1 for ascorbic acid. Significantly, this work presents a compact microfluidic in-fiber interferometer with a micro-channel which can be integrated with chip devices without spatial optical coupling and without complex manufacturing procedure of the waveguide on the chips.

Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors.

Science.gov (United States)

Zhang, Zuocheng; Li, Likai; Horng, Jason; Wang, Nai Zhou; Yang, Fangyuan; Yu, Yijun; Zhang, Yu; Chen, Guorui; Watanabe, Kenji; Taniguchi, Takashi; Chen, Xian Hui; Wang, Feng; Zhang, Yuanbo

2017-10-11

Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for optoelectronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the density of thermally activated carriers; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs) at room temperature. The effect opens up opportunities for future development of electromechanical transducers based on black phosphorus, and we demonstrate an ultrasensitive strain gauge constructed from black phosphorus thin crystals.

Hyperuniform Disordered photonic bandgap materials, from 2D to 3D, and their applications

Science.gov (United States)

Man, Weining; Florescu, Marian; Sahba, Shervin; Sellers, Steven

Recently, hyperuniform disordered systems attracted increasing attention due to their unique physical properties and the potential possibilities of self-assembling them. We had introduced a class of 2D hyperuniform disordered (HUD) photonic bandgap (PBG) materials enabled by a novel constrained optimization method for engineering the material's isotropic photonic bandgap. The intrinsic isotropy in these disordered structures is an inherent advantage associated with the lack of crystalline order, offering unprecedented freedom for functional defect design impossible to achieve in photonic crystals. Beyond our previous experimental work using macroscopic samples with microwave radiation, we demonstrated functional devices based on submicron-scale planar hyperuniform disordered PBG structures further highlight their ability to serve as highly compact, flexible and energy-efficient platforms for photonic integrated circuits. We further extended the design, fabrication, and characterization of the disordered photonic system into 3D. We also identify local self-uniformity as a novel measure of a disordered network's internal structural similarity, which we found crucial for photonic band gap formation. National Science Foundations award DMR-1308084.

Fiber optic-based biosensor

Science.gov (United States)

Ligler, Frances S.

1991-01-01

The NRL fiber optic biosensor is a device which measures the formation of a fluorescent complex at the surface of an optical fiber. Antibodies and DNA binding proteins provide the mechanism for recognizing an analyze and immobilizing a fluorescent complex on the fiber surface. The fiber optic biosensor is fast, sensitive, and permits analysis of hazardous materials remote from the instrumentation. The fiber optic biosensor is described in terms of the device configuration, chemistry for protein immobilization, and assay development. A lab version is being used for assay development and performance characterization while a portable device is under development. Antibodies coated on the fiber are stable for up to two years of storage prior to use. The fiber optic biosensor was used to measure concentration of toxins in the parts per billion (ng/ml) range in under a minute. Immunoassays for small molecules and whole bacteria are under development. Assays using DNA probes as the detection element can also be used with the fiber optic sensor, which is currently being developed to detect biological warfare agents, explosives, pathogens, and toxic materials which pollute the environment.

Bandgap Engineering of Double Perovskites for One- and Two-photon Water Splitting

DEFF Research Database (Denmark)

Castelli, Ivano Eligio; Thygesen, Kristian Sommer; Jacobsen, Karsten Wedel

2013-01-01

Computational screening is becoming increasingly useful in the search for new materials. We are interested in the design of new semiconductors to be used for light harvesting in a photoelectrochemical cell. In the present paper, we study the double perovskite structures obtained by combining 46...... stable cubic perovskites which was found to have a finite bandgap in a previous screening-study. The four-metal double perovskite space is too large to be investigated completely. For this reason we propose a method for combining different metals to obtain a desired bandgap. We derive some bandgap design...... rules on how to combine two cubic perovskites to generate a new combination with a larger or smaller bandgap compared with the constituent structures. Those rules are based on the type of orbitals involved in the conduction bands and on the size of the two cubic bandgaps. We also see that a change...

Fiber free plug and play on-chip scattering cytometer module – for implementation in microfluidic point of care devices

DEFF Research Database (Denmark)

Jensen, Thomas Glasdam; Kutter, Jörg Peter

2010-01-01

In this paper, we report on recent progress toward the development of a plug and play on-chip cytometer based on light scattering. By developing a device that does not depend on the critical alignment and cumbersome handling of fragile optical fibers, we approach a device that is suitable for non...

Optically controlled photonic bandgap structures for microstrip circuits

International Nuclear Information System (INIS)

Cadman, Darren Arthur

2003-01-01

This thesis is concerned with the optical control of microwave photonic bandgap circuits using high resistivity silicon. Photoconducting processes that occur within silicon are investigated. The influence of excess carrier density on carrier mobility and lifetime is examined. In addition, electron-hole pair recombination mechanisms (Shockley-Read-Hall, Auger, radiative and surface) are investigated. The microwave properties of silicon are examined, in particular the variation of silicon reflectivity with excess carrier density. Filtering properties of microstrip photonic bandgap structures and how they may be controlled optically are studied. A proof-of-concept microstrip photonic bandgap structure with optical control is designed, simulated and measured. With no optical illumination incident upon the silicon, the microstrip photonic bandgap structure's filtering properties are well-defined; a 3dB stopband width of 2.6GHz, a 6dB bandwidth of 2GHz and stopband depth of -11.6dB at the centre frequency of 9.9GHz. When the silicon is illuminated, the structure's filtering properties are suppressed. Under illumination the experimental results display an increase in S 21 of 6.5dB and a reduction in S 11 of more than 10dB at 9.9GHz. A comparison of measured and simulated results reveal that the photogenerated excess carrier density is between 4 x 10 15 cm -3 and 1.1 x 10 16 cm -3 . (author)

Electromagnetic interference reduction using electromagnetic bandgap structures in packages, enclosures, cavities, and antennas

Science.gov (United States)

Mohajer Iravani, Baharak

Electromagnetic interference (EMI) is a source of noise problems in electronic devices. The EMI is attributed to coupling between sources of radiation and components placed in the same media such as package or chassis. This coupling can be either through conducting currents or through radiation. The radiation of electromagnetic (EM) fields is supported by surface currents. Thus, minimizing these surface currents is considered a major and critical step to suppress EMI. In this work, we present novel strategies to confine surface currents in different applications including packages, enclosures, cavities, and antennas. The efficiency of present methods of EM noise suppression is limited due to different drawbacks. For example, the traditional use of lossy materials and absorbers suffers from considerable disadvantages including mechanical and thermal reliability leading to limited life time, cost, volume, and weight. In this work, we consider the use of Electromagnetic Band Gap (EBG) structures. These structures are suitable for suppressing surface currents within a frequency band denoted as the bandgap. Their design is straight forward, they are inexpensive to implement, and they do not suffer from the limitations of the previous methods. A new method of EM noise suppression in enclosures and cavity-backed antennas using mushroom-type EBG structures is introduced. The effectiveness of the EBG as an EMI suppresser is demonstrated using numerical simulations and experimental measurements. To allow integration of EBGs in printed circuit boards and packages, novel miniaturized simple planar EBG structures based on use of high-k dielectric material (epsilonr > 100) are proposed. The design consists of meander lines and patches. The inductive meander lines serve to provide current continuity bridges between the capacitive patches. The high-k dielectric material increases the effective capacitive load substantially in comparison to commonly used material with much lower

Water-Dependent Photonic Bandgap in Silica Artificial Opals

OpenAIRE

Gallego-Gomez, Francisco; Blanco, Alvaro; Canalejas-Tejero, Victor; Lopez, Cefe

2011-01-01

Some characteristics of silica-based structuresa-like the photonic properties of artificial opals formed by silica spheresa-can be greatly affected by the presence of adsorbed water. The reversible modification of the water content of an opal is investigated here by moderate heating (below 300 °C) and measuring in situ the changes in the photonic bandgap. Due to reversible removal of interstitial water, large blueshifts of 30 nm and a bandgap narrowing of 7% are observed. The latter is partic...

21 CFR 872.4620 - Fiber optic dental light.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Fiber optic dental light. 872.4620 Section 872...) MEDICAL DEVICES DENTAL DEVICES Surgical Devices § 872.4620 Fiber optic dental light. (a) Identification. A fiber optic dental light is a device that is a light, usually AC-powered, that consists of glass or...

Physical properties and analytical models of band-to-band tunneling in low-bandgap semiconductors

International Nuclear Information System (INIS)

Shih, Chun-Hsing; Dang Chien, Nguyen

2014-01-01

Low-bandgap semiconductors, such as InAs and InSb, are widely considered to be ideal for use in tunnel field-effect transistors to ensure sufficient on-current boosting at low voltages. This work elucidates the physical and mathematical considerations of applying conventional band-to-band tunneling models in low-bandgap semiconductors, and presents a new analytical alternative for practical use. The high-bandgap tunneling generates most at maximum field region with shortest tunnel path, whereas the low-bandgap generations occur dispersedly because of narrow tunnel barrier. The local electrical field associated with tunneling-electron numbers dominates in low-bandgap materials. This work proposes decoupled electric-field terms in the pre-exponential factor and exponential function of generation-rate expressions. Without fitting, the analytical results and approximated forms exhibit great agreements with the sophisticated forms both in high- and low-bandgap semiconductors. Neither nonlocal nor local field is appropriate to be used in numerical simulations for predicting the tunneling generations in a variety of low- and high-bandgap semiconductors

Multi-fidelity machine learning models for accurate bandgap predictions of solids

International Nuclear Information System (INIS)

Pilania, Ghanshyam; Gubernatis, James E.; Lookman, Turab

2016-01-01

Here, we present a multi-fidelity co-kriging statistical learning framework that combines variable-fidelity quantum mechanical calculations of bandgaps to generate a machine-learned model that enables low-cost accurate predictions of the bandgaps at the highest fidelity level. Additionally, the adopted Gaussian process regression formulation allows us to predict the underlying uncertainties as a measure of our confidence in the predictions. In using a set of 600 elpasolite compounds as an example dataset and using semi-local and hybrid exchange correlation functionals within density functional theory as two levels of fidelities, we demonstrate the excellent learning performance of the method against actual high fidelity quantum mechanical calculations of the bandgaps. The presented statistical learning method is not restricted to bandgaps or electronic structure methods and extends the utility of high throughput property predictions in a significant way.

Fiber-optic Fourier transform infrared spectroscopy for remote label-free sensing of medical device surface contamination

Science.gov (United States)

Hassan, Moinuddin; Tan, Xin; Welle, Elissa; Ilev, Ilko

2013-05-01

As a potential major source of biochemical contamination, medical device surfaces are of critical safety concerns in the clinical practice and public health. The development of innovative sensing methods for accurate and real-time detection of medical device surface contamination is essential to protect patients from high risk infection. In this paper, we demonstrate an alternative fiber-optic Fourier Transform Infrared (FTIR) spectroscopy based sensing approach for remote, non-contact, and label-free detection of biochemical contaminants in the mid-infrared (mid-IR) region. The sensing probe is designed using mid-IR hollow fibers and FTIR measurements are carried out in reflection mode. Bovine Serum Albumin (BSA) and bacterial endotoxin of different concentrations under thoroughly dry condition are used to evaluate the detection sensitivity. The devised system can identify ≤0.0025% (≤4 × 1011 molecules) BSA and 0.5% (0.5 EU/ml) endotoxin concentration. The developed sensing approach may be applied to detect various pathogens that pose public health threats.

Eat-by-light fiber-optic and micro-optic devices for food quality and safety assessment

Science.gov (United States)

Mignani, A. G.; Ciaccheri, L.; Cucci, C.; Mencaglia, A. A.; Cimato, A.; Attilio, C.; Thienpont, H.; Ottevaere, H.; Paolesse, R.; Mastroianni, M.; Monti, D.; Buonocore, G.; Del Nobile, A.; Mentana, A.; Grimaldi, M. F.; Dall'Asta, C.; Faccini, A.; Galaverna, G.; Dossena, A.

2007-06-01

A selection is presented of fiber-optic and micro-optic devices that have been designed and tested for guaranteeing the quality and safety of typical foods, such as extra virgin olive oil, beer, and milk. Scattered colorimetry is used to authenticate various types of extra virgin olive oil and beer, while a fiber-optic-based device for UV-VIS-NIR absorption spectroscopy is exploited in order to obtain the hyperspectral optical signature of olive oil. This is done not only for authentication purposes, but also so as to correlate the spectral data with the content of fatty acids, which are important nutritional factors. A micro-optic sensor for the detection of olive oil aroma that is capable of distinguishing different ageing levels of extra virgin olive oil is also presented. It shows effective potential for acting as a smart cap of bottled olive oil in order to achieve a non-destructive olfactory perception of oil ageing. Lastly, a compact portable fluorometer for the rapid monitoring of the carcinogenic M1 aflatoxin in milk, is experimented.

Eat-by-light: fiber-optic and micro-optic devices for food safety and quality assessment

Science.gov (United States)

Mignani, A. G.; Ciaccheri, L.; Cucci, C.; Mencaglia, A. A.; Cimato, A.; Attilio, C.; Thienpont, H.; Ottevaere, H.; Paolesse, R.; Mastroianni, M.; Monti, D.; Buonocore, G.; Del Nobile, A.; Mentana, A.; Dall'Asta, C.; Faccini, A.; Galaverna, G.; Dossena, A.

2007-07-01

A selection of fiber-optic and micro-optic devices is presented designed and tested for monitoring the quality and safety of typical foods, namely the extra virgin olive oil, the beer, and the milk. Scattered colorimetry is used for the authentication of various types of extra virgin olive oil and beer, while a fiber-optic-based device for UV-VIS-NIR absorption spectroscopy is exploited in order to obtain the hyperspectral optical signature of olive oil. This is done not only for authentication purposes, but also so as to correlate the spectral data with the content of fatty acids that are important nutritional factors. A micro-optic sensor for the detection of olive oil aroma is presented. It is capable of distinguishing different ageing levels of extra virgin olive oil. It shows effective potential for acting as a smart cap of bottled olive oil in order to achieve a non-destructive olfactory perception of oil ageing. Lastly, a compact portable fluorometer is experimented for the rapid monitoring of the carcinogenic M1 aflatoxin in milk.

A novel electro-thermal model for wide bandgap semiconductor based devices

DEFF Research Database (Denmark)

Sintamarean, Nicolae Christian; Blaabjerg, Frede; Wang, Huai

2013-01-01

This paper propose a novel Electro-Thermal Model for the new generation of power electronics WBG-devices (by considering the SiC MOSFET-CMF20120D from CREE), which is able to estimate the device junction and case temperature. The Device-Model estimates the voltage drop and the switching energies...... by considering the device current, the off-state blocking voltage and junction temperature variation. Moreover, the proposed Thermal-Model is able to consider the thermal coupling within the MOSFET and its freewheeling diode, integrated into the same package, and the influence of the ambient temperature...... variation. The importance of temperature loop feedback in the estimation accuracy of device junction and case temperature is studied. Furthermore, the Safe Operating Area (SOA) of the SiC MOSFET is determined for 2L-VSI applications which are using sinusoidal PWM. Thus, by considering the heatsink thermal...

Non-leaky modes and bandgaps of surface acoustic waves in wrinkled stiff-film/compliant-substrate bilayers

Science.gov (United States)

Li, Guo-Yang; Xu, Guoqiang; Zheng, Yang; Cao, Yanping

2018-03-01

Surface acoustic wave (SAW) devices have found a wide variety of technical applications, including SAW filters, SAW resonators, microfluidic actuators, biosensors, flow measurement devices, and seismic wave shields. Stretchable/flexible electronic devices, such as sensory skins for robotics, structural health monitors, and wearable communication devices, have received considerable attention across different disciplines. Flexible SAW devices are essential building blocks for these applications, wherein piezoelectric films may need to be integrated with the compliant substrates. When piezoelectric films are much stiffer than soft substrates, SAWs are usually leaky and the devices incorporating them suffer from acoustic losses. In this study, the propagation of SAWs in a wrinkled bilayer system is investigated, and our analysis shows that non-leaky modes can be achieved by engineering stress patterns through surface wrinkles in the system. Our analysis also uncovers intriguing bandgaps (BGs) related to the SAWs in a wrinkled bilayer system; these are caused by periodic deformation patterns, which indicate that diverse wrinkling patterns could be used as metasurfaces for controlling the propagation of SAWs.

Resonance fluorescence spectrum in a two-band photonic bandgap crystal

Science.gov (United States)

Lee, Ray-Kuang; Lai, Yinchieh

2003-05-01

Steady state resonance fluorescence spectra from a two-level atom embedded in a photonic bandgap crystal and resonantly driven by a classical pump light are calculated. The photonic crystal is considered to be with a small bandgap which is in the order of magnitude of the Rabi frequency and is modeled by the anisotropic two-band dispersion relation. Non-Markovian noises caused by the non-uniform distribution of photon density states near the photonic bandgap are taken into account by a new approach which linearizes the optical Bloch equations by using the Liouville operator expansion. Fluorescence spectra that only exhibit sidebands of the Mollow triplet are found, indicating that there is no coherent Rayleigh scattering process.

II-VI Narrow-Bandgap Semiconductors for Optoelectronics

Science.gov (United States)

Baker, Ian

The field of narrow-gap II-VI materials is dominated by the compound semiconductor mercury cadmium telluride, (Hg1-x Cd x Te or MCT), which supports a large industry in infrared detectors, cameras and infrared systems. It is probably true to say that HgCdTe is the third most studied semiconductor after silicon and gallium arsenide. Hg1-x Cd x Te is the material most widely used in high-performance infrared detectors at present. By changing the composition x the spectral response of the detector can be made to cover the range from 1 μm to beyond 17 μm. The advantages of this system arise from a number of features, notably: close lattice matching, high optical absorption coefficient, low carrier generation rate, high electron mobility and readily available doping techniques. These advantages mean that very sensitive infrared detectors can be produced at relatively high operating temperatures. Hg1-x Cd x Te multilayers can be readily grown in vapor-phase epitaxial processes. This provides the device engineer with complex doping and composition profiles that can be used to further enhance the electro-optic performance, leading to low-cost, large-area detectors in the future. The main purpose of this chapter is to describe the applications, device physics and technology of II-VI narrow-bandgap devices, focusing on HgCdTe but also including Hg1-x Mn x Te and Hg1-x Zn x Te. It concludes with a review of the research and development programs into third-generation infrared detector technology (so-called GEN III detectors) being performed in centers around the world.

Study on magnetic fluid optical fiber devices for optical logic operations by characteristics of superparamagnetic nanoparticles and magnetic fluids

International Nuclear Information System (INIS)

Chieh, J. J.; Hong, C. Y.; Yang, S. Y.; Horng, H. E.; Yang, H. C.

2010-01-01

We propose two optical fiber-based schemes using two magnetic fluid optical fiber modulators in series or in parallel for optical logic signal processing and operation. Here, each magnetic fluid optical fiber modulator consists of a bare multimode fiber surrounded by magnetic fluid in which the refractive index is adjustable by applying external magnetic fields amplifying the input electrical signal to vary the transmission intensity of the optical fiber-based scheme. The physical mechanisms for the performances of the magnetic fluid optical fiber devices, such as the transmission loss related to Boolean number of the logic operation as well as the dynamic response, are studied by the characteristics of superparamagnetic nanoparticles and magnetic fluids. For example, in the dynamic response composed of the retarding and response sub-procedures except the response times of the actuation coil, the theoretical evaluation of the retarding time variation with cladding magnetic fluids length has good agreement with the experimental results.

Low-bandgap polymer photovoltaic cells

NARCIS (Netherlands)

Duren, van J.K.J.; Dhanabalan, A.; Hal, van P.A.; Janssen, R.A.J.

2001-01-01

A-novel low-bandgap conjugated polymer (PTPTB, Eg = ~1.6 eV), consisting of alternating electron-rich N-dodecyl-2,5-bis(2'-thienyl)pyrrole (TPT) and electron-deficient 2,1,3-benzothiadiazole (B) units, as a donor material is studied together with a soluble fullerene derivative (PCBM) as acceptor to

A Stretchable Alternating Current Electroluminescent Fiber

Directory of Open Access Journals (Sweden)

Dan Hu

2018-01-01

Full Text Available Flexible, stretchable electroluminescent fibers are of significance to meet the escalating requirements of increasing complexity and multifunctionality of smart electronics. We report a stretchable alternating current electroluminescent (ACEL fiber by a low-cost and all solution-processed scalable process. The ACEL fiber provides high stretchability, decent light-emitting performance, with excellent stability and nearly zero hysteresis. It can be stretched up to 80% strain. Our ACEL fiber device maintained a stable luminance for over 6000 stretch-release cycles at 50% strain. The mechanical stretchability and optical stability of our ACEL fiber device provides new possibilities towards next-generation stretchable displays, electronic textiles, advanced biomedical imaging and lighting, conformable visual readouts in arbitrary shapes, and novel health-monitoring devices.

7-cell core hollow-core photonic crystal fibers with low loss in the spectral region around 2 mu m

DEFF Research Database (Denmark)

Lyngsøe, Jens Kristian; Mangan, B.J.; Jakobsen, C.

2009-01-01

Several 7 cell core hollow-core photonic crystal fibers with bandgaps in the spectral range of 1.4 μm to 2.3 μm have been fabricated. The transmission loss follows the ≈ λ−3 dependency previously reported, with a minimum measured loss of 9.5 dB/km at 1.99 μm. One fiber with a transmission loss...... of 26 dB/km at 2.3 μm is reported, which is significantly lower than the transmission loss of solid silica fibers at this wavelength....

Below-bandgap photoreflection spectroscopy of semiconductor laser structures

International Nuclear Information System (INIS)

Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

2004-01-01

A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

Design of a flat-top fiber Bragg filter via quasi-random modulation of the refractive index.

Science.gov (United States)

Derevyanko, Stanislav

2008-10-15

The statistics of the reflection spectrum of a short-correlated disordered fiber Bragg grating are studied. The averaged spectrum appears to be flat inside the bandgap and has significantly suppressed sidelobes compared to the uniform grating of the same bandwidth. This is due to the Anderson localization of the modes of a disordered grating. This observation prompts a new algorithm for designing passband reflection gratings. Using the stochastic invariant imbedding approach it is possible to obtain the probability distribution function for the random reflection coefficient inside the bandgap and obtain both the variance of the averaged reflectivity as well as the distribution of the time delay of the grating.

Beyond Donor-Acceptor (D-A) Approach: Structure-Optoelectronic Properties-Organic Photovoltaic Performance Correlation in New D-A1 -D-A2 Low-Bandgap Conjugated Polymers.

Science.gov (United States)

Chochos, Christos L; Drakopoulou, Sofia; Katsouras, Athanasios; Squeo, Benedetta M; Sprau, Christian; Colsmann, Alexander; Gregoriou, Vasilis G; Cando, Alex-Palma; Allard, Sybille; Scherf, Ullrich; Gasparini, Nicola; Kazerouni, Negar; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

2017-04-01

Low-bandgap near-infrared polymers are usually synthesized using the common donor-acceptor (D-A) approach. However, recently polymer chemists are introducing more complex chemical concepts for better fine tuning of their optoelectronic properties. Usually these studies are limited to one or two polymer examples in each case study so far, though. In this study, the dependence of optoelectronic and macroscopic (device performance) properties in a series of six new D-A 1 -D-A 2 low bandgap semiconducting polymers is reported for the first time. Correlation between the chemical structure of single-component polymer films and their optoelectronic properties has been achieved in terms of absorption maxima, optical bandgap, ionization potential, and electron affinity. Preliminary organic photovoltaic results based on blends of the D-A 1 -D-A 2 polymers as the electron donor mixed with the fullerene derivative [6,6]-phenyl-C 71 -butyric acid methyl ester demonstrate power conversion efficiencies close to 4% with short-circuit current densities (J sc ) of around 11 mA cm -2 , high fill factors up to 0.70, and high open-circuit voltages (V oc s) of 0.70 V. All the devices are fabricated in an inverted architecture with the photoactive layer processed in air with doctor blade technique, showing the compatibility with roll-to-roll large-scale manufacturing processes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Anomalous band-gap bowing of AlN1−xPx alloy

International Nuclear Information System (INIS)

Winiarski, M.J.; Polak, M.; Scharoch, P.

2013-01-01

Highlights: •Structural and electronic properties of AlN 1−x P x from first principles. •The supercell and the virtual crystall approximation methods applied and compared. •Anomalously high band-gap bowing found. •Similarities of band-gap behavior to that in BN 1−x P x noticed. •Performance of MBJLDA with the pseudopotential approach discussed. -- Abstract: Electronic structure of zinc blende AlN 1−x P x alloy has been calculated from first principles. Structural optimization has been performed within the framework of LDA and the band-gaps calculated with the modified Becke–Jonson (MBJLDA) method. Two approaches have been examined: the virtual crystal approximation (VCA) and the supercell-based calculations (SC). The composition dependence of the lattice parameter obtained from the SC obeys Vegard’s law whereas the volume optimization in the VCA leads to an anomalous bowing of the lattice constant. A strong correlation between the band-gaps and the structural parameter in the VCA method has been observed. On the other hand, in the SC method the supercell size and atoms arrangement (clustered vs. uniform) appear to have a great influence on the computed band-gaps. In particular, an anomalously big band-gap bowing has been found in the case of a clustered configuration with relaxed geometry. Based on the performed tests and obtained results some general features of MBJLDA are discussed and its performance for similar systems predicted

Large bandgap reduced graphene oxide (rGO) based n-p + heterojunction photodetector with improved NIR performance

Science.gov (United States)

Singh, Manjri; Kumar, Gaurav; Prakash, Nisha; Khanna, Suraj P.; Pal, Prabir; Singh, Surinder P.

2018-04-01

Integration of two-dimensional reduced graphene oxide (rGO) with conventional Si semiconductor offers novel strategies for realizing broadband photodiode with enhanced device performance. In this quest, we have synthesized large bandgap rGO and fabricated metal-free broadband (300–1100 nm) back-to-back connected np-pn hybrid photodetector utilizing drop casted n-rGO/p +-Si heterojunctions with high performance in NIR region (830 nm). With controlled illumination, the device exhibited a peak responsivity of 16.7 A W‑1 and peak detectivity of 2.56 × 1012 Jones under 830 nm illumination (11 μW cm‑2) at 1 V applied bias with fast response (∼460 μs) and recovery time (∼446 μs). The fabricated device demonstrated excellent repeatability, durability and photoswitching behavior with high external quantum efficiency (∼2.5 × 103%), along with ultrasensitive behavior at low light conditions.

Highly Conductive Graphene/Ag Hybrid Fibers for Flexible Fiber-Type Transistors.

Science.gov (United States)

Yoon, Sang Su; Lee, Kang Eun; Cha, Hwa-Jin; Seong, Dong Gi; Um, Moon-Kwang; Byun, Joon-Hyung; Oh, Youngseok; Oh, Joon Hak; Lee, Wonoh; Lee, Jea Uk

2015-11-09

Mechanically robust, flexible, and electrically conductive textiles are highly suitable for use in wearable electronic applications. In this study, highly conductive and flexible graphene/Ag hybrid fibers were prepared and used as electrodes for planar and fiber-type transistors. The graphene/Ag hybrid fibers were fabricated by the wet-spinning/drawing of giant graphene oxide and subsequent functionalization with Ag nanoparticles. The graphene/Ag hybrid fibers exhibited record-high electrical conductivity of up to 15,800 S cm(-1). As the graphene/Ag hybrid fibers can be easily cut and placed onto flexible substrates by simply gluing or stitching, ion gel-gated planar transistors were fabricated by using the hybrid fibers as source, drain, and gate electrodes. Finally, fiber-type transistors were constructed by embedding the graphene/Ag hybrid fiber electrodes onto conventional polyurethane monofilaments, which exhibited excellent flexibility (highly bendable and rollable properties), high electrical performance (μh = 15.6 cm(2) V(-1) s(-1), Ion/Ioff > 10(4)), and outstanding device performance stability (stable after 1,000 cycles of bending tests and being exposed for 30 days to ambient conditions). We believe that our simple methods for the fabrication of graphene/Ag hybrid fiber electrodes for use in fiber-type transistors can potentially be applied to the development all-organic wearable devices.

Energy level alignment and sub-bandgap charge generation in polymer:fullerene bulk heterojunction solar cells.

Science.gov (United States)

Tsang, Sai-Wing; Chen, Song; So, Franky

2013-05-07

Using charge modulated electroabsorption spectroscopy (CMEAS), for the first time, the energy level alignment of a polymer:fullerene bulk heterojunction photovoltaic cell is directly measured. The charge-transfer excitons generated by the sub-bandgap optical pumping are coupled with the modulating electric field and introduce subtle changes in optical absorption in the sub-bandgap region. This minimum required energy for sub-bandgap charge genreation is defined as the effective bandgap. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

21 CFR 880.5300 - Medical absorbent fiber.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Medical absorbent fiber. 880.5300 Section 880.5300 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED... Devices § 880.5300 Medical absorbent fiber. (a) Identification. A medical absorbent fiber is a device...

Q-switching and efficient harmonic generation from a single-mode LMA photonic bandgap rod fiber laser

DEFF Research Database (Denmark)

Laurila, Marko; Saby, Julien; Alkeskjold, Thomas T.

2011-01-01

We demonstrate a Single-Mode (SM) Large-Mode-Area (LMA) ytterbium-doped PCF rod fiber laser with stable and close to diffraction limited beam quality with 110W output power. Distributed-Mode-Filtering (DMF) elements integrated in the cladding of the rod fiber provide a robust spatial mode...... with a Mode-Field-Diameter (MFD) of 59 mu m. We further demonstrate high pulse energy Second-Harmonic-Generation (SHG) and Third Harmonic Generation (THG) using a simple Q-switched single-stage rod fiber laser cavity architecture reaching pulse energies up to 1mJ at 515nm and 0.5mJ at 343nm. (C) 2011 Optical...

New low band-gap alternating polyfluorene derivatives for photovoltaic cells

International Nuclear Information System (INIS)

Lee, Sang Kyu; Cho, Nam Sung; Kwak, Joong Hwan; Lim, Koeng Su; Shim, Hong-Ku; Hwang, Do-Hoon; Brabec, Christoph J.

2006-01-01

Bulk heterojunction polymer photovoltaic cells (PPVCs) were fabricated by using low energy band-gap conjugated polymers (PFR3-S and PFR4-S) as electron donors and C 60 as an electron acceptor material. The characterization of the structures of the PFR3-S : C 60 and PFR4-S : C 60 mixtures were carried out with atomic force microscopy (AFM), and the PPVCs were characterized with current density-voltage (J-V) and spectral photocurrent measurements. The PFR3-S : C 60 (1 : 1) and PFR4-S : C 60 (1 : 1) devices were constructed in ITO/PEDOT : PSS (100 nm)/polymer : C 60 (100 nm)/Ca (50 nm)/Al (100 nm) configurations. In the PFR4-S : C 60 PPVC, the spectral response was found to be extended to 700 nm, and exhibited an improved spectral match with solar radiation. The PFR3-S : C 60 (1 : 1) and PFR4-S : C 60 (1 : 1) devices were found to have higher energy conversion efficiencies and better short circuit current densities (J sc ), 3.18 mA/cm 2 and 3.09 mA/cm 2 , respectively, than a MEH-PPV : C 60 (1 : 1) device. The open-circuit voltages (V oc ) of the PFR3-S and PFR4-S devices were found to be 0.85 and 0.81 V, respectively. The energy conversion efficiencies (η e ) of the PFR3-S : C 60 (1 : 1) and PFR4-S : C 60 (1 : 1) devices under AM 1.5 solar illumination (100 mW/cm 2 ) were found to be as high as 0.98% and 1.02%, respectively

Subwavelength wave manipulation in a thin surface-wave bandgap crystal.

Science.gov (United States)

Gao, Zhen; Wang, Zhuoyuan; Zhang, Baile

2018-01-01

It has been recently reported that the unit cell of wire media metamaterials can be tailored locally to shape the flow of electromagnetic waves at deep-subwavelength scales [Nat. Phys.9, 55 (2013)NPAHAX1745-247310.1038/nphys2480]. However, such bulk structures have a thickness of at least the order of wavelength, thus hindering their applications in the on-chip compact plasmonic integrated circuits. Here, based upon a Sievenpiper "mushroom" array [IEEE Trans. Microwave Theory Tech.47, 2059 (1999)IETMAB0018-948010.1109/22.798001], which is compatible with standard printed circuit board technology, we propose and experimentally demonstrate the subwavelength manipulation of surface waves on a thin surface-wave bandgap crystal with a thickness much smaller than the wavelength (1/30th of the operating wavelength). Functional devices including a T-shaped splitter and sharp bend are constructed with good performance.

Coulomb engineering of the bandgap and excitons in two-dimensional materials

Science.gov (United States)

Raja, Archana; Chaves, Andrey; Yu, Jaeeun; Arefe, Ghidewon; Hill, Heather M.; Rigosi, Albert F.; Berkelbach, Timothy C.; Nagler, Philipp; Schüller, Christian; Korn, Tobias; Nuckolls, Colin; Hone, James; Brus, Louis E.; Heinz, Tony F.; Reichman, David R.; Chernikov, Alexey

2017-01-01

The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS2 and WSe2 by hundreds of meV. We exploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as an initial step towards the creation of diverse lateral junctions with nanoscale resolution. PMID:28469178

Time-resolved triton burnup measurement using the scintillating fiber detector in the Large Helical Device

Science.gov (United States)

Ogawa, K.; Isobe, M.; Nishitani, T.; Murakami, S.; Seki, R.; Nakata, M.; Takada, E.; Kawase, H.; Pu, N.; LHD Experiment Group

2018-03-01

Time-resolved measurement of triton burnup is performed with a scintillating fiber detector system in the deuterium operation of the large helical device. The scintillating fiber detector system is composed of the detector head consisting of 109 scintillating fibers having a diameter of 1 mm and a length of 100 mm embedded in the aluminum substrate, the magnetic registrant photomultiplier tube, and the data acquisition system equipped with 1 GHz sampling rate analogies to digital converter and the field programmable gate array. The discrimination level of 150 mV was set to extract the pulse signal induced by 14 MeV neutrons according to the pulse height spectra obtained in the experiment. The decay time of 14 MeV neutron emission rate after neutral beam is turned off measured by the scintillating fiber detector. The decay time is consistent with the decay time of total neutron emission rate corresponding to the 14 MeV neutrons measured by the neutron flux monitor as expected. Evaluation of the diffusion coefficient is conducted using a simple classical slowing-down model FBURN code. It is found that the diffusion coefficient of triton is evaluated to be less than 0.2 m2 s-1.

Multi-cavity locally resonant structure with the low frequency and broad band-gaps

Directory of Open Access Journals (Sweden)

Jiulong Jiang

2016-11-01

Full Text Available A multi-cavity periodic structure with the characteristic of local resonance was proposed in the paper. The low frequency band-gap structure was comparatively analyzed by the finite element method (FEM and electric circuit analogy (ECA. Low frequency band-gap can be opened through the dual influence of the coupling’s resonance in the cavity and the interaction among the couplings between structures. Finally, the influence of the structural factors on the band-gap was analyzed. The results show that the structure, which is divided into three parts equally, has a broader effective band-gap below the frequency of 200 Hz. It is also proved that reducing the interval between unit structures can increase the intensity of the couplings among the structures. And in this way, the width of band-gap would be expanded significantly. Through the parameters adjustment, the structure enjoys a satisfied sound insulation effect below the frequency of 500Hz. In the area of low frequency noise reduction, the structure has a lot of potential applications.

A Direct Bandgap Copper-Antimony Halide Perovskite.

Science.gov (United States)

Vargas, Brenda; Ramos, Estrella; Pérez-Gutiérrez, Enrique; Alonso, Juan Carlos; Solis-Ibarra, Diego

2017-07-12

Since the establishment of perovskite solar cells (PSCs), there has been an intense search for alternative materials to replace lead and improve their stability toward moisture and light. As single-metal perovskite structures have yielded unsatisfactory performances, an alternative is the use of double perovskites that incorporate a combination of metals. To this day, only a handful of these compounds have been synthesized, but most of them have indirect bandgaps and/or do not have bandgaps energies well-suited for photovoltaic applications. Here we report the synthesis and characterization of a unique mixed metal ⟨111⟩-oriented layered perovskite, Cs 4 CuSb 2 Cl 12 (1), that incorporates Cu 2+ and Sb 3+ into layers that are three octahedra thick (n = 3). In addition to being made of abundant and nontoxic elements, we show that this material behaves as a semiconductor with a direct bandgap of 1.0 eV and its conductivity is 1 order of magnitude greater than that of MAPbI 3 (MA = methylammonium). Furthermore, 1 has high photo- and thermal-stability and is tolerant to humidity. We conclude that 1 is a promising material for photovoltaic applications and represents a new type of layered perovskite structure that incorporates metals in 2+ and 3+ oxidation states, thus significantly widening the possible combinations of metals to replace lead in PSCs.

Hierarchically Structured Electrospun Fibers

Directory of Open Access Journals (Sweden)

Nicole E. Zander

2013-01-01

Full Text Available Traditional electrospun nanofibers have a myriad of applications ranging from scaffolds for tissue engineering to components of biosensors and energy harvesting devices. The generally smooth one-dimensional structure of the fibers has stood as a limitation to several interesting novel applications. Control of fiber diameter, porosity and collector geometry will be briefly discussed, as will more traditional methods for controlling fiber morphology and fiber mat architecture. The remainder of the review will focus on new techniques to prepare hierarchically structured fibers. Fibers with hierarchical primary structures—including helical, buckled, and beads-on-a-string fibers, as well as fibers with secondary structures, such as nanopores, nanopillars, nanorods, and internally structured fibers and their applications—will be discussed. These new materials with helical/buckled morphology are expected to possess unique optical and mechanical properties with possible applications for negative refractive index materials, highly stretchable/high-tensile-strength materials, and components in microelectromechanical devices. Core-shell type fibers enable a much wider variety of materials to be electrospun and are expected to be widely applied in the sensing, drug delivery/controlled release fields, and in the encapsulation of live cells for biological applications. Materials with a hierarchical secondary structure are expected to provide new superhydrophobic and self-cleaning materials.

Fiber Singular Optics

OpenAIRE

A. V. Volyar

2002-01-01

The present review is devoted to the optical vortex behavior both in free space and optical fibers. The processes of the vortex transformations in perturbed optical fibers are analyzed on the base of the operator of the spin – orbit interaction in order to forecast the possible ways of manufacturing the vortex preserving fibers and their applications in supersensitive optical devices.

Modelling and measurement of bandgap behaviour in medium-wavelength IR InAs/InAs0.815Sb0.185 strained-layer superlattices

Science.gov (United States)

Letka, Veronica; Keen, James; Craig, Adam; Marshall, Andrew R. J.

2017-10-01

InAs/InAs1-xSbx type-II strained-layer superlattices (SLS) are a structure with potential infrared detection applications, owing to its tunable bandgap and suppressed Auger recombination. A series of medium-wavelength infrared (MWIR) InAs/InAs0.815Sb0.185 SLS structures, grown as undoped absorption epilayers on GaAs, were fabricated using molecular beam epitaxy in order to study the dependence of the ground state transitions on temperature and superlattice period thickness. Photoluminescence peaks at 4 K were obtained with the use of a helium-cooled micro-PL system and an InSb detector, and temperature-dependent absorption spectra were measured in the range 77 K - 300 K on a Fourier Transform Infrared (FTIR) spectrometer, equipped with a 1370 K blackbody source and a DTGS detector. An nBn device sample with the absorber structure identical to one of the undoped samples was also grown and processed with the goal of measuring temperature-dependent spectral response. A model for superlattice band alignment was also devised, incorporating the Bir-Pikus transformation results for uniaxial and biaxial strain, and the Einstein oscillator model for bandgap temperature dependence. Absorption coefficients of several 1000 cm-1 throughout the entire MWIR range are found for all samples, and temperature dependence of the bandgaps is extracted and compared to the model. This and photoluminescence data also demonstrate bandgap shifts consistent with the different superlattice periods of the three samples.

Fiber-optic evanescent-field sensor for attitude measurement

Science.gov (United States)

Liu, Yun; Chen, Shimeng; Liu, Zigeng; Guang, Jianye; Peng, Wei

2017-11-01

We proposed a new approach to attitude measurement by an evanescent field-based optical fiber sensing device and demonstrated a liquid pendulum. The device consisted of three fiber-optic evanescent-filed sensors which were fabricated by tapered single mode fibers and immersed in liquid. Three fiber Bragg gratings were used to measure the changes in evanescent field. And their reflection peaks were monitored in real time as measurement signals. Because every set of reflection responses corresponded to a unique attitude, the attitude of the device could be measured by the three fiber-optic evanescent-filed sensors. After theoretical analysis, computerized simulation and experimental verification, regular responses were obtained using this device for attitude measurement. The measurement ranges of dihedral angle and direction angle were 0°-50° and 0°-360°. The device is based on cost-effective power-referenced scheme. It can be used in electromagnetic or nuclear radiation environment.

Wide Band-Gap 3,4-Difluorothiophene-Based Polymer with 7% Solar Cell Efficiency: an Alternative to P3HT

KAUST Repository

Wolf, Jannic Sebastian; Cruciani, Federico; El Labban, Abdulrahman; Beaujuge, Pierre

2015-01-01

We report on a wide band-gap polymer donor composed of benzo[1,2-b:4,5-b']dithiophene (BDT) and 3,4-difluorothiophene ([2F]T) units (Eopt ~2.1 eV), and show that the fluorinated analog PBDT[2F]T performs significantly better than its non-fluorinated counterpart PBDT[2H]T in BHJ solar cells with PC71BM. While control P3HT- and PBDT[2H]T-based devices yield PCEs of ca. 4% and 3% (Max.) respectively, PBDT[2F]T-based devices reach PCEs of ca. 7%, combining a large Voc of ca. 0.9 V and short-circuit current values (ca. 10.7 mA/cm2) comparable to those of the best P3HT-based control devices.

Wide Band-Gap 3,4-Difluorothiophene-Based Polymer with 7% Solar Cell Efficiency: an Alternative to P3HT

KAUST Repository

Wolf, Jannic Sebastian

2015-05-27

We report on a wide band-gap polymer donor composed of benzo[1,2-b:4,5-b\\']dithiophene (BDT) and 3,4-difluorothiophene ([2F]T) units (Eopt ~2.1 eV), and show that the fluorinated analog PBDT[2F]T performs significantly better than its non-fluorinated counterpart PBDT[2H]T in BHJ solar cells with PC71BM. While control P3HT- and PBDT[2H]T-based devices yield PCEs of ca. 4% and 3% (Max.) respectively, PBDT[2F]T-based devices reach PCEs of ca. 7%, combining a large Voc of ca. 0.9 V and short-circuit current values (ca. 10.7 mA/cm2) comparable to those of the best P3HT-based control devices.

Wide Bandgap Semiconductor Opportunities in Power Electronics

Energy Technology Data Exchange (ETDEWEB)

Das, Sujit [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Marlino, Laura D. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Armstrong, Kristina O. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2018-01-01

The report objective is to explore the Wide Bandgap (WBG) Power Electronics (PE) market, applications, and potential energy savings in order to identify key areas where further resources and investments of the U.S. Department of Energy’s Office of Energy Efficiency and Renewable Energy (DOE EERE) would have the most impact on U.S. competiveness. After considering the current market, several potential near-term application areas were identified as having significant market and energy savings potential with respect to clean energy applications: (1) data centers (uninterruptible power supplies and server power supplies); (2) renewable energy generation (photovoltaic-solar and wind); (3) motor drives (industrial, commercial and residential); (4) rail traction; and, (5) hybrid and electric vehicles (traction and charging). After the initial explorative analyses, it became clear that, SiC, not GaN, would be the principal WBG power device material for the chosen markets in the near future. Therefore, while GaN is discussed when appropriate, this report focuses on SiC devices, other WBG applications (e.g., solid-state transformers, combined heat and power, medical, and wireless power), the GaN market, and GaN specific applications (e.g., LiDAR, 5G) will be explored at a later date. In addition to the market, supply and value chain analyses addressed in Section 1 of this report, a SWOT (Strength, Weakness, Opportunity, Threat) analysis and potential energy savings analysis was conducted for each application area to identify the major potential WBG application area(s) with a U.S. competitiveness opportunity in the future.

High frequency modulation circuits based on photoconductive wide bandgap switches

Science.gov (United States)

Sampayan, Stephen

2018-02-13

Methods, systems, and devices for high voltage and/or high frequency modulation. In one aspect, an optoelectronic modulation system includes an array of two or more photoconductive switch units each including a wide bandgap photoconductive material coupled between a first electrode and a second electrode, a light source optically coupled to the WBGP material of each photoconductive switch unit via a light path, in which the light path splits into multiple light paths to optically interface with each WBGP material, such that a time delay of emitted light exists along each subsequent split light path, and in which the WBGP material conducts an electrical signal when a light signal is transmitted to the WBGP material, and an output to transmit the electrical signal conducted by each photoconductive switch unit. The time delay of the photons emitted through the light path is substantially equivalent to the time delay of the electrical signal.

Complete three-dimensional photonic bandgap in a simple cubic structure

International Nuclear Information System (INIS)

Lin, Shawn-Yu; Fleming, J. G.; Lin, Robin; Sigalas, M. M.; Biswas, R.; Ho, K. M.

2001-01-01

The creation of a three-dimensional (3D) photonic crystal with simple cubic (sc) symmetry is important for applications in the signal routing and 3D waveguiding of light. With a simple stacking scheme and advanced silicon processing, a 3D sc structure was constructed from a 6-in. silicon wafer. The sc structure is experimentally shown to have a complete 3D photonic bandgap in the infrared wavelength. The finite size effect is also observed, accounting for a larger absolute photonic bandgap

Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory.

Science.gov (United States)

Li, Wen; Guo, Fengning; Ling, Haifeng; Liu, Hui; Yi, Mingdong; Zhang, Peng; Wang, Wenjun; Xie, Linghai; Huang, Wei

2018-01-01

In this paper, the development of organic field-effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide-bandgap (WBG) small-molecule organic semiconductor material [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3 (WG 3 ) is reported. The WG 3 NSs are prepared from phase separation by spin-coating blend solutions of WG 3 /trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG 3 film, the device based on WG 3 NSs arrays exhibits significant improvements in memory performance including larger memory window (≈45 V), faster switching speed (≈1 s), stable retention capability (>10 4 s), and reliable switching properties. A quantitative study of the WG 3 NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge-exciton annihilation efficiency induced by increased contact area between the WG 3 NSs and pentacene layer. This versatile solution-processing approach to preparing WG 3 NSs arrays as charge trapping sites allows for fabrication of high-performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

In-fiber modal interferometer based on multimode and double cladding fiber segments for tunable fiber laser applications

Science.gov (United States)

Prieto-Cortés, P.; Álvarez-Tamayo, R. I.; Durán-Sánchez, M.; Castillo-Guzmán, A.; Salceda-Delgado, G.; Ibarra-Escamilla, B.; Kuzin, E. A.; Barcelata-Pinzón, A.; Selvas-Aguilar, R.

2018-02-01

We report an in-fiber structure based on the use of a multimode fiber segment and a double cladding fiber segment, and its application as spectral filter in an erbium-doped fiber laser for selection and tuning of the laser line wavelength. The output transmission of the proposed device exhibit spectrum modulation of the input signal with free spectral range of 21 nm and maximum visibility enhanced to more than 20 dB. The output spectrum of the in-fiber filter is wavelength displaced by bending application which allows a wavelength tuning of the generated laser line in a range of 12 nm. The use of the proposed in-fiber structure is demonstrated as a reliable, simple, and low-cost wavelength filter for tunable fiber lasers design and optical instrumentation applications.

First-principles study of bandgap tuning in Ge1-xPbxSe

Science.gov (United States)

Lohani, Himanshu

2018-03-01

Narrow bandgap and its tuning are important aspects of materials for their technological applications. In this context group IV-VI semiconductors are one of the interesting candidates. In this paper, we explore the possibility of bandgap tuning in one of the family member of this family GeSe by using isoelectronic Pb doping. Our study is first-principles based electronic structure calculations of Ge1-xPbxSe. This study reveals that the Ge-p and Se-p states are strongly hybridized in GeSe and shows a gap in the DOS at Ef in GeSe. This gap reduces systematically with simultaneous enhancement of the states in the near Ef region as a function of Pb doping. This leads tuning of the indirect bandgap in GeSe via Pb doping. The results of the indirect bandgap decrement are consistent with the experimental findings. We propose a mechanism where the electrostatic effect of dopant Pb cation could be responsible for these changes in the electronic structure of GeSe.

Molecular Gas-Filled Hollow Optical Fiber Lasers in the Near Infrared

Science.gov (United States)

2012-01-12

Benabid, F., Roberts , P. J., Light, P. S., and Raymer , M. G., “Generation and photonic guidance of multi-octave optical-frequency combs,” Science, 318...scattering in molecular hydrogen," Phys. Rev. Lett. 93, 123903 (2004). 16. F. Couny, F. Benabid, P. J. Roberts , P. S. Light, and M. G. Raymer ...Couny, F., Wang, Y. Y., Wheeler, N. V., Roberts , P. J., and Benabid, F., “Double photonic bandgap hollow-core photonic crystal fiber,” Opt

Processing of nanocrystalline diamond thin films for thermal management of wide-bandgap semiconductor power electronics

International Nuclear Information System (INIS)

Govindaraju, N.; Singh, R.N.

2011-01-01

Highlights: → Studied effect of nanocrystalline diamond (NCD) deposition on device metallization. → Deposited NCD on to top of High Electron Mobility Transistors (HEMTs) and Si devices. → Temperatures below 290 deg. C for Si devices and 320 deg. C for HEMTs prevent metal damage. → Development of novel NCD-based thermal management for power electronics feasible. - Abstract: High current densities in wide-bandgap semiconductor electronics operating at high power levels results in significant self-heating of devices, which necessitates the development thermal management technologies to effectively dissipate the generated heat. This paper lays the foundation for the development of such technology by ascertaining process conditions for depositing nanocrystalline diamond (NCD) on AlGaN/GaN High Electron Mobility Transistors (HEMTs) with no visible damage to device metallization. NCD deposition is carried out on Si and GaN HEMTs with Au/Ni metallization. Raman spectroscopy, optical and scanning electron microscopy are used to evaluate the quality of the deposited NCD films. Si device metallization is used as a test bed for developing process conditions for NCD deposition on AlGaN/GaN HEMTs. Results indicate that no visible damage occurs to the device metallization for deposition conditions below 290 deg. C for Si devices and below 320 deg. C for the AlGaN/GaN HEMTs. Possible mechanisms for metallization damage above the deposition temperature are enumerated. Electrical testing of the AlGaN/GaN HEMTs indicates that it is indeed possible to deposit NCD on GaN-based devices with no significant degradation in device performance.

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

International Nuclear Information System (INIS)

Lumb, M. P.; Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J.; González, M.; Bennett, M. F.; Herrera, M.; Delgado, F. J.; Molina, S. I.

2016-01-01

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm 2 to be realized.

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

Energy Technology Data Exchange (ETDEWEB)

Lumb, M. P. [The George Washington University, Washington, DC 20037 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J. [US Naval Research Laboratory, Washington, DC 20375 (United States); González, M.; Bennett, M. F. [Sotera Defense Solutions, Annapolis Junction, Maryland 20701 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Herrera, M.; Delgado, F. J.; Molina, S. I. [University of Cádiz, 11510, Puerto Real, Cádiz (Spain)

2016-05-21

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.

Magnetically sensitive nanodiamond-doped tellurite glass fibers.

Science.gov (United States)

Ruan, Yinlan; Simpson, David A; Jeske, Jan; Ebendorff-Heidepriem, Heike; Lau, Desmond W M; Ji, Hong; Johnson, Brett C; Ohshima, Takeshi; Afshar V, Shahraam; Hollenberg, Lloyd; Greentree, Andrew D; Monro, Tanya M; Gibson, Brant C

2018-01-19

Traditional optical fibers are insensitive to magnetic fields, however many applications would benefit from fiber-based magnetometry devices. In this work, we demonstrate a magnetically sensitive optical fiber by doping nanodiamonds containing nitrogen vacancy centers into tellurite glass fibers. The fabrication process provides a robust and isolated sensing platform as the magnetic sensors are fixed in the tellurite glass matrix. Using optically detected magnetic resonance from the doped nanodiamonds, we demonstrate detection of local magnetic fields via side excitation and longitudinal collection. This is a first step towards intrinsically magneto-sensitive fiber devices with future applications in medical magneto-endoscopy and remote mineral exploration sensing.

Fabrication of optical fiber micro(and nano)-optical and photonic devices and components, using computer controlled spark thermo-pulling system

International Nuclear Information System (INIS)

Fatemi, H.; Mosleh, A.; Pashmkar, M.; Khaksar Kalati, A.

2007-01-01

Fabrication of optical fiber Micro (and Nano)-Optical component and devices, as well as, those applicable for photonic purposes are described. It is to demonstrate the practical capabilities and characterization of the previously reported Computer controlled spark thermo-pulling fabrication system.

Tunable and rotatable birefringence controller based on electrical control of liquid crystal filled photonic bandgap fibers

DEFF Research Database (Denmark)

Wei, Lei; Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard

2009-01-01

We demonstrate the first compact electrically tunable and rotatable birefringence controller based on LCPBG fibers. The birefringence can be tuned electrically to work as a quarter-wave or a half-wave plate in the wavelength range 1520nm-1600nm.......We demonstrate the first compact electrically tunable and rotatable birefringence controller based on LCPBG fibers. The birefringence can be tuned electrically to work as a quarter-wave or a half-wave plate in the wavelength range 1520nm-1600nm....

Fiber fuse light-induced continuous breakdown of silica glass optical fiber

CERN Document Server

Todoroki, Shin-ichi

2014-01-01

This book describes the fiber fuse phenomenon that causes a serious problem for the present optical communication systems. High-power light often brings about catastrophic damage to optical devices. Silica glass optical fibers with ultralow transmission loss are not the exception. A fiber fuse appears in a heated region of the fiber cable delivering a few watts of light and runs toward the light source destroying its core region. Understanding this phenomenon is a necessary first step in the development of future optical communication systems. This book provides supplementary videos and photog

Passive band-gap reconfiguration born from bifurcation asymmetry.

Science.gov (United States)

Bernard, Brian P; Mann, Brian P

2013-11-01

Current periodic structures are constrained to have fixed energy transmission behavior unless active control or component replacement is used to alter their wave propagation characteristics. The introduction of nonlinearity to generate multiple stable equilibria is an alternative strategy for realizing distinct energy propagation behaviors. We investigate the creation of a reconfigurable band-gap system by implementing passive switching between multiple stable states of equilibrium, to alter the level of energy attenuation in response to environmental stimuli. The ability to avoid potentially catastrophic loads is demonstrated by tailoring the bandpass and band-gap regions to coalesce for two stable equilibria and varying an external load parameter to trigger a bifurcation. The proposed phenomenon could be utilized in remote or autonomous applications where component modifications and active control are impractical.

Structure and optical band-gap energies of Ba0.5Sr0.5TiO3 thin films fabricated by RF magnetron plasma sputtering

International Nuclear Information System (INIS)

Xu, Zhimou; Suzuki, Masato; Yokoyama, Shin

2005-01-01

The structure and optical band-gap energies of Ba 0.5 Sr 0.5 TiO 3 (BST0.5) thin films prepared on SiO 2 /Si and fused quartz substrates by RF magnetron plasma sputtering were studied in terms of deposition temperature and film thickness. Highly (100)-oriented BST0.5 thin films were successfully sputtered on a Si substrate with an approximately 1.0-μm-thick SiO 2 layer at a deposition temperature of above 450degC. The optical transmittance of BST0.5 thin films weakly depended on the magnitude of X-ray diffraction (XRD) peak intensity. This is very helpful for monolithic integration of BST0.5 films for electrooptical functions directly onto a SiO 2 /Si substrate. The band-gap energies showed a strong dependence on the deposition temperature and film thickness. It was mainly related to the quantum size effect and the influence of the crystallinity of thin films, such as grain boundaries, grain size, oriented growth, and the existence of an amorphous phase. The band-gap energy values, which were much larger than those of single crystals, decreased with the increase in the deposition temperature and the thickness of BST0.5 thin films. The band-gap energy of 311-nm-thick amorphous BST0.5 thin film was about 4.45 eV and that of (100)-oriented BST0.5 thin film with a thickness of 447 nm was about 3.89 eV. It is believed that the dependence of the band-gap energies of the thin films on the crystallinity for various values of deposition temperature and film thickness means that there could be application in integrated optical devices. (author)

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

Energy Technology Data Exchange (ETDEWEB)

Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2015-12-14

Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

Optimal design of lossy bandgap structures

DEFF Research Database (Denmark)

Jensen, Jakob Søndergaard

2004-01-01

The method of topology optimization is used to design structures for wave propagation with one lossy material component. Optimized designs for scalar elastic waves are presented for mininimum wave transmission as well as for maximum wave energy dissipation. The structures that are obtained...... are of the 1D or 2D bandgap type depending on the objective and the material parameters....

Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN

National Research Council Canada - National Science Library

Steckl, Andrew

2006-01-01

Rare earth (RE) dopants (such as Er, Eu, Tm) in the wide bandgap semiconductor (WBGS) GaN are investigated for the fabrication of robust visible and infrared light emitting devices at a variety of wavelengths...

Emergence of an enslaved phononic bandgap in a non-equilibrium pseudo-crystal

Science.gov (United States)

Bachelard, Nicolas; Ropp, Chad; Dubois, Marc; Zhao, Rongkuo; Wang, Yuan; Zhang, Xiang

2017-08-01

Material systems that reside far from thermodynamic equilibrium have the potential to exhibit dynamic properties and behaviours resembling those of living organisms. Here we realize a non-equilibrium material characterized by a bandgap whose edge is enslaved to the wavelength of an external coherent drive. The structure dynamically self-assembles into an unconventional pseudo-crystal geometry that equally distributes momentum across elements. The emergent bandgap is bestowed with lifelike properties, such as the ability to self-heal to perturbations and adapt to sudden changes in the drive. We derive an exact analytical solution for both the spatial organization and the bandgap features, revealing the mechanism for enslavement. This work presents a framework for conceiving lifelike non-equilibrium materials and emphasizes the potential for the dynamic imprinting of material properties through external degrees of freedom.

Emergence of an enslaved phononic bandgap in a non-equilibrium pseudo-crystal.

Science.gov (United States)

Bachelard, Nicolas; Ropp, Chad; Dubois, Marc; Zhao, Rongkuo; Wang, Yuan; Zhang, Xiang

2017-08-01

Material systems that reside far from thermodynamic equilibrium have the potential to exhibit dynamic properties and behaviours resembling those of living organisms. Here we realize a non-equilibrium material characterized by a bandgap whose edge is enslaved to the wavelength of an external coherent drive. The structure dynamically self-assembles into an unconventional pseudo-crystal geometry that equally distributes momentum across elements. The emergent bandgap is bestowed with lifelike properties, such as the ability to self-heal to perturbations and adapt to sudden changes in the drive. We derive an exact analytical solution for both the spatial organization and the bandgap features, revealing the mechanism for enslavement. This work presents a framework for conceiving lifelike non-equilibrium materials and emphasizes the potential for the dynamic imprinting of material properties through external degrees of freedom.

Femtosecond laser inscription of asymmetric directional couplers for in-fiber optical taps and fiber cladding photonics.

Science.gov (United States)

Grenier, Jason R; Fernandes, Luís A; Herman, Peter R

2015-06-29

Precise alignment of femtosecond laser tracks in standard single mode optical fiber is shown to enable controllable optical tapping of the fiber core waveguide light with fiber cladding photonic circuits. Asymmetric directional couplers are presented with tunable coupling ratios up to 62% and bandwidths up to 300 nm at telecommunication wavelengths. Real-time fiber monitoring during laser writing permitted a means of controlling the coupler length to compensate for micron-scale alignment errors and to facilitate tailored design of coupling ratio, spectral bandwidth and polarization properties. Laser induced waveguide birefringence was harnessed for polarization dependent coupling that led to the formation of in-fiber polarization-selective taps with 32 dB extinction ratio. This technology enables the interconnection of light propagating in pre-existing waveguides with laser-formed devices, thereby opening a new practical direction for the three-dimensional integration of optical devices in the cladding of optical fibers and planar lightwave circuits.

Radiation ray measuring device

International Nuclear Information System (INIS)

Maekawa, Tatsuyuki; Ida, Masaki.

1997-01-01

The present invention provides a chained-radiation ray monitoring system which can be applied to an actual monitoring system of a nuclear power plant or the like. Namely, this device comprises a plurality of scintillation detectors. Each of the detectors has two light take-out ports for emitting light corresponding to radiation rays irradiated from the object of the measurement to optical fibers. In addition, incident light from the optical fiber by way of one of the light take-out optical ports is transmitted to the other of the ports and sent from the other optical port to the fibers. Plurality sets of measuring systems are provided in which each of the detectors are disposed corresponding to a plurality of objects to be measured. A signal processing device is (1) connected with optical fibers of plurality sets of measuring systems in conjunction, (2) detects the optical pulses inputted from the optical fibers to identify the detector from which the optical pulses are sent and (3) measures the amount of radiation rays detected by the identified detector. As a result, the device of the present invention can form a measuring system with redundancy. (I.S.)

Developing a novel fiber optic fluorescence device for multiplexed high-throughput cytotoxic screening.

Science.gov (United States)

Lee, Dennis; Barnes, Stephen

2010-01-01

The need for new pharmacological agents is unending. Yet the drug discovery process has changed substantially over the past decade and continues to evolve in response to new technologies. There is presently a high demand to reduce discovery time by improving specific lab disciplines and developing new technology platforms in the area of cell-based assay screening. Here we present the developmental concept and early stage testing of the Ab-Sniffer, a novel fiber optic fluorescence device for high-throughput cytotoxicity screening using an immobilized whole cell approach. The fused silica fibers are chemically functionalized with biotin to provide interaction with fluorescently labeled, streptavidin functionalized alginate-chitosan microspheres. The microspheres are also functionalized with Concanavalin A to facilitate binding to living cells. By using lymphoma cells and rituximab in an adaptation of a well-known cytotoxicity protocol we demonstrate the utility of the Ab-Sniffer for functional screening of potential drug compounds rather than indirect, non-functional screening via binding assay. The platform can be extended to any assay capable of being tied to a fluorescence response including multiple target cells in each well of a multi-well plate for high-throughput screening.

Method and device for detecting impact events on a security barrier which includes a hollow rebar allowing insertion and removal of an optical fiber

Science.gov (United States)

Pies, Ross E.

2016-03-29

A method and device for the detection of impact events on a security barrier. A hollow rebar is farmed within a security barrier, whereby the hollow rebar is completely surrounded by the security barrier. An optical fiber passes through the interior of the hollow rebar. An optical transmitter and an optical receiver are both optically connected to the optical fiber and connected to optical electronics. The optical electronics are configured to provide notification upon the detection of an impact event at the security barrier based on the detection of disturbances within the optical fiber.

Silver metaphosphate glass wires inside silica fibers--a new approach for hybrid optical fibers.

Science.gov (United States)

Jain, Chhavi; Rodrigues, Bruno P; Wieduwilt, Torsten; Kobelke, Jens; Wondraczek, Lothar; Schmidt, Markus A

2016-02-22

Phosphate glasses represent promising candidates for next-generation photonic devices due to their unique characteristics, such as vastly tunable optical properties, and high rare earth solubility. Here we show that silver metaphosphate wires with bulk optical properties and diameters as small as 2 µm can be integrated into silica fibers using pressure-assisted melt filling. By analyzing two types of hybrid metaphosphate-silica fibers, we show that the filled metaphosphate glass has only negligible higher attenuation and a refractive index that is identical to the bulk material. The presented results pave the way towards new fiber-type optical devices relying on metaphosphate glasses, which are promising materials for applications in nonlinear optics, sensing and spectral filtering.

Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives.

Science.gov (United States)

Casalino, Maurizio; Coppola, Giuseppe; Iodice, Mario; Rendina, Ivo; Sirleto, Luigi

2010-01-01

Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

Directory of Open Access Journals (Sweden)

Luigi Sirleto

2010-11-01

Full Text Available Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

Influence of interface preparation on minority carrier lifetime for low bandgap tandem solar cell materials

Energy Technology Data Exchange (ETDEWEB)

Szabo, Nadine; Sagol, B. Erol; Seidel, Ulf; Schwarzburg, Klaus; Hannappel, Thomas [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

2010-07-01

III-V semiconductor compounds grown by MOVPE are implemented in todays state-of-the-art third generation multi-junction solar cells. The current record multi junction solar cell grown on germanium, having Ge, Ga(In)As and GaInP as subcells, reached a record efficiency of 41.6%. The efficiency of these multi junction solar cells could be significantly increased, if its low bandgap Ge subcell would be replaced by a more efficient tandem. For this purpose the low bandgap materials InGaAs and InGaAsP are suitable. The bandgap composition of these materials allows a better yield of the solar spectrum. Based on InGaAs/InGaAsP absorber materials we have developed a low bandgap tandem solar cell with optimized bandgaps. Results of time resolved photoluminescence (TRPL) for the IR-bandgap compounds InGaAsP (1.03 eV)/InGaAs (0.73 eV) are presented. The lifetime of minority carriers is one of the most important properties of solar cell absorber materials. We show on the example of the low band gap tandem cell how the choice of the materials, the quality of the bulk, the optimization of the band gap energies and the preparation of the critical interfaces are essential to build a high efficiency solar cell. The quality of the bulk and the preparation of the critical interfaces are essential for the growth of the double heterostructure (DHS).

Fiber Sensor Technology Today

Science.gov (United States)

Hotate, Kazuo

2006-08-01

Fiber sensor technologies are overviewed. Since the early 1970s, this field has been developed, on the basis of the same devices and photonic principles as fiber communication technologies. Besides simple configurations, in which the fiber acts only as a data transmission line, sophisticated configurations have also been developed, in which the fiber is used as a device to realize unique sensing mechanisms. The fiber optic gyroscope (FOG) is a good example, and has been developed as an absolute rotation sensor used, for example, for navigation and/or attitude control applications. Compared with traditional spinning-mass gyroscopes, the FOG has advantages, such as a short warming-up time, a light weight, and easy handling. A Japanese satellite, which was launched in August 2005 with a mission to observe the aurora, is controlled with a FOG. The FOG has also been used in consumer applications, such as the camera stabilizer, radio-controlled (RC) helicopter navigation, and the control of humanoid robots. Recently, distributed and multiplexed sensing schemes, in particular, have been studied and developed, in which a long fiber acts like a “nerve” for feeling the strain and/or the temperature distribution along the fiber. Performances of artificial nerve systems have markedly improved within the last couple of years, in spatial resolution and measurement speed. By embedding the “fiber-optic nerve system” in aircraft wings, bridges and tall buildings, these materials and structures can sense damage to prevent disasters.

Pressure-Induced Bandgap Optimization in Lead-Based Perovskites with Prolonged Carrier Lifetime and Ambient Retainability

Energy Technology Data Exchange (ETDEWEB)

Liu, Gang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Kong, Lingping [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Gong, Jue [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA; Yang, Wenge [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Mao, Ho-kwang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Hu, Qingyang [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Liu, Zhenxian [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Schaller, Richard D. [Center for Nanoscale Materials, Argonne National Laboratory, Argonne IL 60439 USA; Zhang, Dongzhou [Hawai' i Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawai' i at Manoa, Honolulu HI 96822 USA; Xu, Tao [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA

2016-12-05

Bond length and bond angle exhibited by valence electrons is essential to the core of chemistry. Using lead-based organic–inorganic perovskite compounds as an exploratory platform, it is demonstrated that the modulation of valence electrons by compression can lead to discovery of new properties of known compounds. Yet, despite its unprecedented progress, further efficiency boost of lead-based organic–inorganic perovskite solar cells is hampered by their wider bandgap than the optimum value according to the Shockley–Queisser limit. By modulating the valence electron wavefunction with modest hydraulic pressure up to 2.1 GPa, the optimized bandgap for single-junction solar cells in lead-based perovskites, for the first time, is achieved by narrowing the bandgap of formamidinium lead triiodide (HC(NH2)2PbI3) from 1.489 to 1.337 eV. Strikingly, such bandgap narrowing is partially retained after the release of pressure to ambient, and the bandgap narrowing is also accompanied with double-prolonged carrier lifetime. With First-principles simulation, this work opens a new dimension in basic chemical understanding of structural photonics and electronics and paves an alternative pathway toward better photovoltaic materials-by-design.

Pressure-Induced Bandgap Optimization in Lead-Based Perovskites with Prolonged Carrier Lifetime and Ambient Retainability

Energy Technology Data Exchange (ETDEWEB)

Liu, Gang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Kong, Lingping [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Gong, Jue [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA; Yang, Wenge [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Mao, Ho-kwang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Hu, Qingyang [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Liu, Zhenxian [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Schaller, Richard D. [Center for Nanoscale Materials, Argonne National Laboratory, Argonne IL 60439 USA; Zhang, Dongzhou [Hawai' i Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawai' i at Manoa, Honolulu HI 96822 USA; Xu, Tao [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA

2016-12-05

Bond length and bond angle exhibited by valence electrons is essential to the core of chemistry. Using lead-based organic–inorganic perovskite compounds as an exploratory platform, it is demonstrated that the modulation of valence electrons by compression can lead to discovery of new properties of known compounds. Yet, despite its unprecedented progress, further efficiency boost of lead-based organic–inorganic perovskite solar cells is hampered by their wider bandgap than the optimum value according to the Shockley–Queisser limit. By modulating the valence electron wavefunction with modest hydraulic pressure up to 2.1 GPa, the optimized bandgap for single-junction solar cells in lead-based perovskites, for the first time, is achieved by narrowing the bandgap of formamidinium lead triiodide (HC(NH₂)₂PbI₃) from 1.489 to 1.337 eV. Strikingly, such bandgap narrowing is partially retained after the release of pressure to ambient, and the bandgap narrowing is also accompanied with double-prolonged carrier lifetime. With First-principles simulation, this work opens a new dimension in basic chemical understanding of structural photonics and electronics and paves an alternative pathway toward better photovoltaic materials-by-design.

Fast Fiber-Coupled Imaging Devices

Energy Technology Data Exchange (ETDEWEB)

Brockington, Samuel; Case, Andrew; Witherspoon, Franklin

2018-04-22

HyperV Technologies Corp. has successfully designed, built and experimentally demonstrated a full scale 1024 pixel 100 MegaFrames/s fiber coupled camera with 12 or 14 bits, and record lengths of 32K frames, exceeding our original performance objectives. This high-pixel-count, fiber optically-coupled, imaging diagnostic can be used for investigating fast, bright plasma events. In Phase 1 of this effort, a 100 pixel fiber-coupled fast streak camera for imaging plasma jet profiles was constructed and successfully demonstrated. The resulting response from outside plasma physics researchers emphasized development of increased pixel performance as a higher priority over increasing pixel count. In this Phase 2 effort, HyperV therefore focused on increasing the sample rate and bit-depth of the photodiode pixel designed in Phase 1, while still maintaining a long record length and holding the cost per channel to levels which allowed up to 1024 pixels to be constructed. Cost per channel was $53.31, very close to our original target of $50 per channel. The system consists of an imaging "camera head" coupled to a photodiode bank with an array of optical fibers. The output of these fast photodiodes is then digitized at 100 Megaframes per second and stored in record lengths of 32,768 samples with bit depths of 12 to 14 bits per pixel. Longer record lengths are possible with additional memory. A prototype imaging system with up to 1024 pixels was designed and constructed and used to successfully take movies of very fast moving plasma jets as a demonstration of the camera performance capabilities. Some faulty electrical components on the 64 circuit boards resulted in only 1008 functional channels out of 1024 on this first generation prototype system. We experimentally observed backlit high speed fan blades in initial camera testing and then followed that with full movies and streak images of free flowing high speed plasma jets (at 30-50 km/s). Jet structure and jet collisions onto

Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

Science.gov (United States)

Wijewarnasuriya, Priyalal S.

2016-05-01

Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

Bandgap tunability at single-layer molybdenum disulphide grain boundaries

KAUST Repository

Huang, Yu Li; Chen, Yifeng; Zhang, Wenjing; Quek, Su Ying; Chen, Chang-Hsiao; Li, Lain-Jong; Hsu, Wei-Ting; Chang, Wen-Hao; Zheng, Yu Jie; Chen, Wei; Wee, Andrew T. S.

2015-01-01

represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle

Fiber-integrated tungsten disulfide saturable absorber (mirror) for pulsed fiber lasers

Science.gov (United States)

Chen, Hao; Li, Irene Ling; Ruan, Shuangchen; Guo, Tuan; Yan, Peiguang

2016-08-01

We propose two schemes for achieving tungsten disulfide (WS2)-based saturable absorber (SA) and saturable absorber mirror (SAM). By utilizing the pulsed laser deposition method, we grow the WS2 film on microfiber to form an evanescent field interaction SA device. Incorporating this SA device into a common ring-cavity erbium-doped fiber (EDF) laser, stably passive mode-locking can be achieved with pulse duration of 395 fs and signal-to-noise ratio of 64 dB. We also produce a fiber tip integrated WS2-SAM by utilizing the magnetron sputtering technique (MST). This new type of SAM combines the WS2 layer as SA and gold mirror as high reflective mirror. By employing the WS2-SAM, we construct the linear-cavity EDF lasers, and achieve passive mode-locking operation with pulse duration of ˜1 ns and SNR of ˜61 dB. We further achieve stably passive Q-switching operation with pulse duration of ˜160 ns and pulse energy of 54.4 nJ. These fiber-integrated SAs and SAMs have merits of compactness and reliability, paving the way for the development of new photonic devices such as SAs for pulsed laser technology.

Optical interconnection for a polymeric PLC device using simple positional alignment.

Science.gov (United States)

Ryu, Jin Hwa; Kim, Po Jin; Cho, Cheon Soo; Lee, El-Hang; Kim, Chang-Seok; Jeong, Myung Yung

2011-04-25

This study proposes a simple cost-effective method of optical interconnection between a planar lightwave circuit (PLC) device chip and an optical fiber. It was conducted to minimize and overcome the coupling loss caused by lateral offset which is due to the process tolerance and the dimensional limitation existing between PLC device chips and fiber array blocks with groove structures. A PLC device chip and a fiber array block were simultaneously fabricated in a series of polymer replication processes using the original master. The dimensions (i.e., width and thickness) of the under-clad of the PLC device chip were identical to those of the fiber array block. The PLC device chip and optical fiber were aligned by simple positional control for the vertical direction of the PLC device chip under a particular condition. The insertion loss of the proposed 1 x 2 multimode optical splitter device interconnection was 4.0 dB at 850 nm and the coupling loss was below 0.1 dB compared with single-fiber based active alignment.

Effects of corrugation shape on frequency band-gaps for longitudinal wave motion in a periodic elastic layer

DEFF Research Database (Denmark)

Sorokin, Vladislav

2016-01-01

The paper concerns determining frequency band-gaps for longitudinal wave motion in a periodic waveguide. The waveguide may be considered either as an elastic layer with variable thickness or as a rod with variable cross section. As a result, widths and locations of all frequency band-gaps are det......The paper concerns determining frequency band-gaps for longitudinal wave motion in a periodic waveguide. The waveguide may be considered either as an elastic layer with variable thickness or as a rod with variable cross section. As a result, widths and locations of all frequency band......, harmonic in the corrugation series. The revealed insights into the mechanism of band-gap formation can be used to predict locations and widths of all frequency band-gaps featured by any corrugation shape. These insights are general and can be valid also for other types of wave motion in periodic structures...

Trifluoromethyl-Substituted Large Band-Gap Polytriphenylamines for Polymer Solar Cells with High Open-Circuit Voltages

Directory of Open Access Journals (Sweden)

Shuwang Yi

2018-01-01

Full Text Available Two large band-gap polymers (PTPACF and PTPA2CF based on polytriphenylamine derivatives with the introduction of electron-withdrawing trifluoromethyl groups were designed and prepared by Suzuki polycondensation reaction. The chemical structures, thermal, optical and electrochemical properties were characterized in detail. From the UV-visible absorption spectra, the PTPACF and PTPA2CF showed the optical band gaps of 2.01 and 2.07 eV, respectively. The cyclic voltammetry (CV measurement displayed the deep highest occupied molecular orbital (HOMO energy levels of −5.33 and −5.38 eV for PTPACF and PTPA2CF, respectively. The hole mobilities, determined by field-effect transistor characterization, were 2.5 × 10−3 and 1.1 × 10−3 cm2 V−1 S−1 for PTPACF and PTPA2CF, respectively. The polymer solar cells (PSCs were tested under the conventional device structure of ITO/PEDOT:PSS/polymer:PC71BM/PFN/Al. All of the PSCs showed the high open circuit voltages (Vocs with the values approaching 1 V. The PTPACF and PTPA2CF based PSCs gave the power conversion efficiencies (PCEs of 3.24% and 2.40%, respectively. Hence, it is a reliable methodology to develop high-performance large band-gap polymer donors with high Vocs through the feasible side-chain modification.

Two-dimensional Kagome photonic bandgap waveguide

DEFF Research Database (Denmark)

Nielsen, Jens Bo; Søndergaard, Thomas; Libori, Stig E. Barkou

2000-01-01

The transverse-magnetic photonic-bandgap-guidance properties are investigated for a planar two-dimensional (2-D) Kagome waveguide configuration using a full-vectorial plane-wave-expansion method. Single-moded well-localized low-index guided modes are found. The localization of the optical modes...... is investigated with respect to the width of the 2-D Kagome waveguide, and the number of modes existing for specific frequencies and waveguide widths is mapped out....

Structure and optical bandgap relationship of π-conjugated systems.

Directory of Open Access Journals (Sweden)

André Leitão Botelho

Full Text Available In bulk heterojunction photovoltaic systems both the open-circuit voltage as well as the short-circuit current, and hence the power conversion efficiency, are dependent on the optical bandgap of the electron-donor material. While first-principles methods are computationally intensive, simpler model Hamiltonian approaches typically suffer from one or more flaws: inability to optimize the geometries for their own input; absence of general, transferable parameters; and poor performance for non-planar systems. We introduce a set of new and revised parameters for the adapted Su-Schrieffer-Heeger (aSSH Hamiltonian, which is capable of optimizing geometries, along with rules for applying them to any [Formula: see text]-conjugated system containing C, N, O, or S, including non-planar systems. The predicted optical bandgaps show excellent agreement to UV-vis spectroscopy data points from literature, with a coefficient of determination [Formula: see text], a mean error of -0.05 eV, and a mean absolute deviation of 0.16 eV. We use the model to gain insights from PEDOT, fused thiophene polymers, poly-isothianaphthene, copolymers, and pentacene as sources of design rules in the search for low bandgap materials. Using the model as an in-silico design tool, a copolymer of benzodithiophenes along with a small-molecule derivative of pentacene are proposed as optimal donor materials for organic photovoltaics.

Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals

KAUST Repository

Abdelhady, Ahmed L.

2016-01-02

Controllable doping of semiconductors is a fundamental technological requirement for electronic and optoelectronic devices. As intrinsic semiconductors, hybrid perovskites have so far been a phenomenal success in photovoltaics. The inability to dope these materials heterovalently (or aliovalently) has greatly limited their wider utilizations in electronics. Here we show an efficient in situ chemical route that achieves the controlled incorporation of trivalent cations (Bi3+, Au3+, or In3+) by exploiting the retrograde solubility behavior of perovskites. We term the new method dopant incorporation in the retrograde regime. We achieve Bi3+ incorporation that leads to bandgap tuning (∼300 meV), 104 fold enhancement in electrical conductivity, and a change in the sign of majority charge carriers from positive to negative. This work demonstrates the successful incorporation of dopants into perovskite crystals while preserving the host lattice structure, opening new avenues to tailor the electronic and optoelectronic properties of this rapidly emerging class of solution-processed semiconductors. © 2016 American Chemical Society.

Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals

KAUST Repository

Abdelhady, Ahmed L.; Saidaminov, Makhsud I.; Banavoth, Murali; Adinolfi, Valerio; Voznyy, Oleksandr; Katsiev, Khabiboulakh; Alarousu, Erkki; Comin, Riccardo; Dursun, Ibrahim; Sinatra, Lutfan; Sargent, Edward H.; Mohammed, Omar F.; Bakr, Osman

2016-01-01

Controllable doping of semiconductors is a fundamental technological requirement for electronic and optoelectronic devices. As intrinsic semiconductors, hybrid perovskites have so far been a phenomenal success in photovoltaics. The inability to dope these materials heterovalently (or aliovalently) has greatly limited their wider utilizations in electronics. Here we show an efficient in situ chemical route that achieves the controlled incorporation of trivalent cations (Bi3+, Au3+, or In3+) by exploiting the retrograde solubility behavior of perovskites. We term the new method dopant incorporation in the retrograde regime. We achieve Bi3+ incorporation that leads to bandgap tuning (∼300 meV), 104 fold enhancement in electrical conductivity, and a change in the sign of majority charge carriers from positive to negative. This work demonstrates the successful incorporation of dopants into perovskite crystals while preserving the host lattice structure, opening new avenues to tailor the electronic and optoelectronic properties of this rapidly emerging class of solution-processed semiconductors. © 2016 American Chemical Society.

Cylindrical Piezoelectric Fiber Composite Actuators

Science.gov (United States)

Allison, Sidney G.; Shams, Qamar A.; Fox, Robert L.

2008-01-01

The use of piezoelectric devices has become widespread since Pierre and Jacques Curie discovered the piezoelectric effect in 1880. Examples of current applications of piezoelectric devices include ultrasonic transducers, micro-positioning devices, buzzers, strain sensors, and clocks. The invention of such lightweight, relatively inexpensive piezoceramic-fiber-composite actuators as macro fiber composite (MFC) actuators has made it possible to obtain strains and displacements greater than those that could be generated by prior actuators based on monolithic piezoceramic sheet materials. MFC actuators are flat, flexible actuators designed for bonding to structures to apply or detect strains. Bonding multiple layers of MFC actuators together could increase force capability, but not strain or displacement capability. Cylindrical piezoelectric fiber composite (CPFC) actuators have been invented as alternatives to MFC actuators for applications in which greater forces and/or strains or displacements may be required. In essence, a CPFC actuator is an MFC or other piezoceramic fiber composite actuator fabricated in a cylindrical instead of its conventional flat shape. Cylindrical is used here in the general sense, encompassing shapes that can have circular, elliptical, rectangular or other cross-sectional shapes in the planes perpendicular to their longitudinal axes.

First principle analyses of direct bandgap solar cells with absorbing substrates versus mirrors

Energy Technology Data Exchange (ETDEWEB)

Kirk, Alexander P. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Kirk, Wiley P. [Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States)

2013-11-07

Direct bandgap InP, GaAs, CdTe, and Ga{sub 0.5}In{sub 0.5}P solar cells containing backside mirrors as well as parasitically absorbing substrates are analyzed for their limiting open circuit voltage and power conversion efficiency with comparison to record solar cells. From the principle of detailed balance, it is shown quantitatively that mirror solar cells have greater voltage and power conversion efficiency than their substrate counterparts. Next, the radiative recombination coefficient and maximum radiative lifetime of GaAs mirror and substrate solar cells are calculated and compared to the nonradiative Auger and Shockley-Read-Hall (SRH) lifetimes. Mirror solar cells have greater radiative lifetime than their substrate variants. Auger lifetime exceeds radiative lifetime for both substrate and mirror cells while SRH lifetime may be less or greater than radiative lifetime depending on trap concentration and capture cross section. Finally, the change in free energy of the photogenerated carriers is analyzed in a comparison between InP, GaAs, CdTe, and Ga{sub 0.5}In{sub 0.5}P mirror and substrate solar cells in order to characterize the relationship between solar photon quality and free energy management in solar cells with differing bandgaps. Wider bandgap visible threshold Ga{sub 0.5}In{sub 0.5}P solar cells make better use of the available change in free energy of the photogenerated charge carriers, even when normalized to the bandgap energy, than narrower bandgap near-IR threshold InP, GaAs, and CdTe solar cells.

Capturing reflected cladding modes from a fiber Bragg grating with a double-clad fiber coupler.

Science.gov (United States)

Baiad, Mohamad Diaa; Gagné, Mathieu; Lemire-Renaud, Simon; De Montigny, Etienne; Madore, Wendy-Julie; Godbout, Nicolas; Boudoux, Caroline; Kashyap, Raman

2013-03-25

We present a novel measurement scheme using a double-clad fiber coupler (DCFC) and a fiber Bragg grating (FBG) to resolve cladding modes. Direct measurement of the optical spectra and power in the cladding modes is obtained through the use of a specially designed DCFC spliced to a highly reflective FBG written into slightly etched standard photosensitive single mode fiber to match the inner cladding diameter of the DCFC. The DCFC is made by tapering and fusing two double-clad fibers (DCF) together. The device is capable of capturing backward propagating low and high order cladding modes simply and efficiently. Also, we demonstrate the capability of such a device to measure the surrounding refractive index (SRI) with an extremely high sensitivity of 69.769 ± 0.035 μW/RIU and a resolution of 1.433 × 10(-5) ± 8 × 10(-9) RIU between 1.37 and 1.45 RIU. The device provides a large SRI operating range from 1.30 to 1.45 RIU with sufficient discrimination for all individual captured cladding modes. The proposed scheme can be adapted to many different types of bend, temperature, refractive index and other evanescent wave based sensors.

Bandgap tuning with thermal residual stresses induced in a quantum dot.

Science.gov (United States)

Kong, Eui-Hyun; Joo, Soo-Hyun; Park, Hyun-Jin; Song, Seungwoo; Chang, Yong-June; Kim, Hyoung Seop; Jang, Hyun Myung

2014-09-24

Lattice distortion induced by residual stresses can alter electronic and mechanical properties of materials significantly. Herein, a novel way of the bandgap tuning in a quantum dot (QD) by lattice distortion is presented using 4-nm-sized CdS QDs grown on a TiO2 particle as an application example. The bandgap tuning (from 2.74 eV to 2.49 eV) of a CdS QD is achieved by suitably adjusting the degree of lattice distortion in a QD via the tensile residual stresses which arise from the difference in thermal expansion coefficients between CdS and TiO2. The idea of bandgap tuning is then applied to QD-sensitized solar cells, achieving ≈60% increase in the power conversion efficiency by controlling the degree of thermal residual stress. Since the present methodology is not limited to a specific QD system, it will potentially pave a way to unexplored quantum effects in various QD-based applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Relation between bandgap and resistance drift in amorphous phase change materials.

Science.gov (United States)

Rütten, Martin; Kaes, Matthias; Albert, Andreas; Wuttig, Matthias; Salinga, Martin

2015-12-01

Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal evolution of infrared spectra measured on amorphous thin films of the three phase change materials Ag4In3Sb67Te26, GeTe and the most popular Ge2Sb2Te5. A widening of the bandgap upon annealing accompanied by a decrease of the optical dielectric constant ε∞ is observed for all three materials. Quantitative comparison with experimental data for the apparent activation energy of conduction reveals that the temporal evolution of bandgap and activation energy can be decoupled. The case of Ag4In3Sb67Te26, where the increase of activation energy is significantly smaller than the bandgap widening, demonstrates the possibility to identify new phase change materials with reduced resistance drift.

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

Science.gov (United States)

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Design for maximum band-gaps in beam structures

DEFF Research Database (Denmark)

Olhoff, Niels; Niu, Bin; Cheng, Gengdong

2012-01-01

This paper aims to extend earlier optimum design results for transversely vibrating Bernoulli-Euler beams by determining new optimum band-gap beam structures for (i) different combinations of classical boundary conditions, (ii) much larger values of the orders n and n-1 of adjacent upper and lower...

Optimizing pulse compressibility in completely all-fibered Ytterbium chirped pulse amplifiers for in vivo two photon laser scanning microscopy.

Science.gov (United States)

Fernández, A; Grüner-Nielsen, L; Andreana, M; Stadler, M; Kirchberger, S; Sturtzel, C; Distel, M; Zhu, L; Kautek, W; Leitgeb, R; Baltuska, A; Jespersen, K; Verhoef, A

2017-08-01

A simple and completely all-fiber Yb chirped pulse amplifier that uses a dispersion matched fiber stretcher and a spliced-on hollow core photonic bandgap fiber compressor is applied in nonlinear optical microscopy. This stretching-compression approach improves compressibility and helps to maximize the fluorescence signal in two-photon laser scanning microscopy as compared with approaches that use standard single mode fibers as stretcher. We also show that in femtosecond all-fiber systems, compensation of higher order dispersion terms is relevant even for pulses with relatively narrow bandwidths for applications relying on nonlinear optical effects. The completely all-fiber system was applied to image green fluorescent beads, a stained lily-of-the-valley root and rat-tail tendon. We also demonstrated in vivo imaging in zebrafish larvae, where we simultaneously measure second harmonic and fluorescence from two-photon excited red-fluorescent protein. Since the pulses are compressed in a fiber, this source is especially suited for upgrading existing laser scanning (confocal) microscopes with multiphoton imaging capabilities in space restricted settings or for incorporation in endoscope-based microscopy.

Stress induced birefringence in hybrid TIR/PBG guiding solid photonic crystal fibers

DEFF Research Database (Denmark)

Lyngsøe, Jens Kristian; Mangan, Brian Joseph; Olausson, Christina Bjarnal Thulin

2010-01-01

We report on two types of polarization maintaining solid photonic crystal fibers that guide light by a combination of a photonic bandgap and total internal reflection. Group and phase birefringence are studied experimentally and numerically for stress-applying parts made from B-doped and F......-doped silica. The stress field originating from Ge-doped cladding rods is shown to interfere with the stress field from the B-doped and F-doped rods. Since the differential expansion coefficients of B-doped and F-doped silica have opposite signs this interference is either destructive or constructive....... Consequently, we found that the fiber with F-doped stress applying parts has the highest modal phase birefringence, and polarization cross talk is characterized by an h-parameter below 3⋅10−5 m−1....

Optical fiber communications

CERN Document Server

Keiser, Gerd

2008-01-01

The fourth edition of this popular text and reference book presents the fundamental principles for understanding and applying optical fiber technology to sophisticated modern telecommunication systems. Optical-fiber-based telecommunication networks have become a major information-transmission-system, with high capacity links encircling the globe in both terrestrial and undersea installations. Numerous passive and active optical devices within these links perform complex transmission and networking functions in the optical domain, such as signal amplification, restoration, routing, and switching. Along with the need to understand the functions of these devices comes the necessity to measure both component and network performance, and to model and stimulate the complex behavior of reliable high-capacity networks.

Quasiperiodic one-dimensional photonic crystals with adjustable multiple photonic bandgaps.

Science.gov (United States)

Vyunishev, Andrey M; Pankin, Pavel S; Svyakhovskiy, Sergey E; Timofeev, Ivan V; Vetrov, Stepan Ya

2017-09-15

We propose an elegant approach to produce photonic bandgap (PBG) structures with multiple photonic bandgaps by constructing quasiperiodic photonic crystals (QPPCs) composed of a superposition of photonic lattices with different periods. Generally, QPPC structures exhibit both aperiodicity and multiple PBGs due to their long-range order. They are described by a simple analytical expression, instead of quasiperiodic tiling approaches based on substitution rules. Here we describe the optical properties of QPPCs exhibiting two PBGs that can be tuned independently. PBG interband spacing and its depth can be varied by choosing appropriate reciprocal lattice vectors and their amplitudes. These effects are confirmed by the proof-of-concept measurements made for the porous silicon-based QPPC of the appropriate design.

No-core fiber-based highly sensitive optical fiber pH sensor.

Science.gov (United States)

Bhardwaj, Vanita; Pathak, Akhilesh Kumar; Singh, Vinod Kumar

2017-05-01

The present work describes the fabrication and characterization of an optical fiber pH sensor using a sol–gel technique. The sensing head configuration is incorporated using a short section of no-core fiber, coated with tetraethyl orthosilicate and spliced at the end of a single mode fiber with a bulge. Different types of indicators (bromophenol blue, cresol red, and chlorophenol red) were used to achieve a wide pH range from 2 to 13. High sensitivities of the fabricated device were found to be 1.02 and ? 0.93 ?? nm / pH for acidic and alkaline solutions, respectively. From the characterization results, it was noted that there is an impact of ionic strength and an effect of the temperature of liquid on the response characteristic, which is an advantage of the existing device over the other pH sensors. The fabricated sensor exhibited good reflection spectrum, indicating a blueshift in resonance wavelength for alkaline solutions and a redshift for acidic solutions.

Electronic structure characterization and bandgap engineeringofsolar hydrogen materials

Energy Technology Data Exchange (ETDEWEB)

Guo, Jinghua

2007-11-01

Bandgap, band edge positions as well as the overall band structure of semiconductors are of crucial importance in photoelectrochemical and photocatalytic applications. The energy position of the band edge level can be controlled by the electronegativity of the dopants, the pH of the solution (flatband potential variation of 60 mV per pH unit), as well as by quantum confinement effects. Accordingly, band edges and bandgap can be tailored to achieve specific electronic, optical or photocatalytic properties. Synchrotron radiation with photon energy at or below 1 keV is giving new insight into such areas as condensed matter physics and extreme ultraviolet optics technology. In the soft x-ray region, the question tends to be, what are the electrons doing as they migrated between the atoms. In this paper, I will present a number of soft x-ray spectroscopic study of nanostructured 3d metal compounds Fe{sub 2}O{sub 3} and ZnO.

Femtosecond laser direct-write of optofluidics in polymer-coated optical fiber

Science.gov (United States)

Joseph, Kevin A. J.; Haque, Moez; Ho, Stephen; Aitchison, J. Stewart; Herman, Peter R.

2017-03-01

Multifunctional lab in fiber technology seeks to translate the accomplishments of optofluidic, lab on chip devices into silica fibers. a robust, flexible, and ubiquitous optical communication platform that can underpin the `Internet of Things' with distributed sensors, or enable lab on chip functions deep inside our bodies. Femtosecond lasers have driven significant advances in three-dimensional processing, enabling optical circuits, microfluidics, and micro-mechanical structures to be formed around the core of the fiber. However, such processing typically requires the stripping and recoating of the polymer buffer or jacket, increasing processing time and mechanically weakening the device. This paper reports on a comprehensive assessment of laser damage in urethane-acrylate-coated fiber. The results show a sufficient processing window is available for femtosecond laser processing of the fiber without damaging the polymer jacket. The fiber core, cladding, and buffer could be simultaneously processed without removal of the buffer jacket. Three-dimensional lab in fiber devices were successfully fabricated by distortion-free immersionlens focusing, presenting fiber-cladding optical circuits and progress towards chemically-etched channels, microfluidic cavities, and MEMS structure inside buffer-coated fiber.

Radioactive waste processing device

International Nuclear Information System (INIS)

Inaguma, Masahiko; Takahara, Nobuaki; Hara, Satomi.

1996-01-01

In a processing device for filtering laundry liquid wastes and shower drains incorporated with radioactive materials, a fiber filtration device is disposed and an activated carbon filtration device is also disposed subsequent to the fiber filtration device. In addition, a centrifugal dewatering device is disposed for dewatering spent granular activated carbon in the activated carbon filtration device, and a minute filtering device is disposed for filtering the separated dewatering liquid. Filtrates filtered by the minute filtration device are recovered in a collecting tank. Namely, at first, suspended solid materials in laundry liquid wastes and shower drains are captured, and then, ingredients concerning COD are adsorbed in the activated carbon filtration device. The radioactive liquid wastes of spent granular activated carbon in the activated carbon filtration device are reduced by dewatering them by the centrifugal dewatering device, and then the granular activated carbon is subjected to an additional processing. Further, it is separated by filtration using the minute filtration device and removed as cakes. Since the filtrates are recovered to the collecting tank and filtered again, the water quality of the drains is not degraded. (N.H.)

On the Integration of Wide Band-gap Semiconductors in Single Phase Boost PFC Converters

DEFF Research Database (Denmark)

Hernandez Botella, Juan Carlos

Power semiconductor technology has dominated the evolution of switched mode power supplies (SMPS). Advances in silicon (Si) technology, as the introduction of metal oxide field effect transistor (MOSFET), isolated gate bipolar transistors (IGBT), superjunction vertical structures and Schottky...... diodes, or the introduction of silicon carbide (SiC) diodes, provided large steps in miniaturization and efficiency improvement of switched mode power converters. Gallium nitride (GaN) and SiC semiconductor devices have already been around for some years. The first one proliferated due to the necessity...... of high frequency operation in optoelectronics applications. On the other hand, Schottky SiC power diodes were introduced in 2001 as an alternative to eliminate reverse recovery issues in Si rectifiers. Wide band-gap semiconductors offer an increased electrical field strength and electron mobility...

Direct bandgap silicon: tensile-strained silicon nanocrystals

Czech Academy of Sciences Publication Activity Database

Kůsová, Kateřina; Hapala, Prokop; Valenta, J.; Jelínek, Pavel; Cibulka, Ondřej; Ondič, Lukáš; Pelant, Ivan

2014-01-01

Roč. 1, č. 2 (2014), "1300042-1"-"1300042-9" ISSN 2196-7350 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GPP204/12/P235; GA ČR GAP204/10/0952 Institutional support: RVO:68378271 Keywords : silicon nanocrystals * badstructure * light emission * direct bandgap * surface capping Subject RIV: BM - Solid Matter Physics ; Magnetism

High pumping-power fiber combiner for double-cladding fiber lasers and amplifiers

Science.gov (United States)

Zheng, Jinkun; Zhao, Wei; Zhao, Baoyin; Li, Zhe; Chang, Chang; Li, Gang; Gao, Qi; Ju, Pei; Gao, Wei; She, Shengfei; Wu, Peng; Hou, Chaoqi; Li, Weinan

2018-03-01

A high pumping-power fiber combiner for backward pumping configurations is fabricated and demonstrated by manufacturing process refinement. The pump power handling capability of every pump fiber can extend to 600 W, corresponding to the average pump coupling efficiency of 94.83%. Totally, 2.67-kW output power with the beam quality factor M2 of 1.41 was obtained, using this combiner in the fiber amplifier experimental setup. In addition, the temperature of the splicing region was less than 50.0°C in the designed combiner under the action of circulating cooling water. The experimental results prove that the designed combiner is a promising integrated all-fiber device for multikilowatt continuous-wave fiber laser with excellent beam quality.

Advances in wide bandgap SiC for optoelectronics

DEFF Research Database (Denmark)

Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

2014-01-01

Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication...

Single fiber UV detector based on hydrothermally synthesized ZnO nanorods for wearable computing devices

Science.gov (United States)

Eom, Tae Hoon; Han, Jeong In

2018-01-01

There has been increasing interest in zinc oxide (ZnO) based ultraviolet (UV) sensing devices over the last several decades owing to their diverse range of applications. ZnO has extraordinary properties, such as a wide band gap and high exciton binding energy, which make it a beneficial material for UV sensing device. Herein, we show a ZnO UV sensing device fabricated on a cylindrical Polyethylene terephthalate (PET) monofilament. The ZnO active layer was synthesized by hydrothermal synthesis and the Cu electrodes were deposited by radio frequency (RF) magnetron sputtering. Cu thin film was deposited uniformly on a single PET fiber by rotating it inside the sputtering chamber. Various characteristics were investigated by changing the concentration of the seed solution and the growth solution. The growth of ZnO nanorods was confirmed by Field Emission Scanning Electron Microscopy (FESEM) to see the surface state and structure, followed by X-ray Diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analysis. Also, current-voltage (I-V) curves were obtained to measure photocurrent and conductance. Furthermore, falling response time, rising response time, and responsivity were calculated by analyzing current-time (I-t) curves.

Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

International Nuclear Information System (INIS)

Kim, Won Mok; Kim, Jin Soo; Jeong, Jeung-hyun; Park, Jong-Keuk; Baik, Young-Jun; Seong, Tae-Yeon

2013-01-01

Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16 –10 21 cm −3 , were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated. - Highlights: ► Optical band-gaps of polycrystalline ZnO thin films were analyzed. ► Experimental carrier concentration range covered from 10 16 to 10 21 cm −3 . ► Nonparabolic conduction band parameters were used in theoretical analysis. ► The band-filling and the band-gap renormalization effects were considered. ► The measured optical band-gap shifts corresponded well with the calculated ones

Rationally Controlled Synthesis of CdSexTe1-x Alloy Nanocrystals and Their Application in Efficient Graded Bandgap Solar Cells.

Science.gov (United States)

Wen, Shiya; Li, Miaozi; Yang, Junyu; Mei, Xianglin; Wu, Bin; Liu, Xiaolin; Heng, Jingxuan; Qin, Donghuan; Hou, Lintao; Xu, Wei; Wang, Dan

2017-11-08

CdSe x Te 1-x semiconductor nanocrystals (NCs), being rod-shaped/irregular dot-shaped in morphology, have been fabricated via a simple hot-injection method. The NCs composition is well controlled through varying molar ratios of Se to Te precursors. Through changing the composition of the CdSe x Te 1-x NCs, the spectral absorption of the NC thin film between 570-800 nm is proved to be tunable. It is shown that the bandgap of homogeneously alloyed CdSe x Te 1-x active thin film is nonlinearly correlated with the different compositions, which is perceived as optical bowing. The solar cell devices based on CdSe x Te 1-x NCs with the structure of ITO/ZnO/CdSe/CdSe x Te 1-x /MoO x /Au and the graded bandgap ITO/ZnO/CdSe( w / o )/CdSe x Te 1-x /CdTe/MoO x /Au are systematically evaluated. It was found that the performance of solar cells degrades almost linearly with the increase of alloy NC film thickness with respect to ITO/ZnO/CdSe/CdSe 0.2 Te 0.8 /MoO x /Au. From another perspective, in terms of the graded bandgap structure of ITO/ZnO/CdSe/CdSe x Te 1-x /CdTe/MoO x /Au, the performance is improved in contrast with its single-junction analogues. The graded bandgap structure is proved to be efficient when absorbing spectrum and the solar cells fabricated under the structure of ITO/ZnO/CdSe 0.8 Te 0.2 /CdSe 0.2 Te 0.8 /CdTe/MoO x /Au indicate power conversion efficiency (PCE) of 6.37%, a value among the highest for solution-processed inversely-structured CdSe x Te 1-x NC solar cells. As the NC solar cells are solution-processed under environmental conditions, they are promising for fabricating solar cells at low cost, roll by roll and in large area.

Perturbative approach to continuum generation in a fiber Bragg grating.

Science.gov (United States)

Westbrook, P S; Nicholson, J W

2006-08-21

We derive a perturbative solution to the nonlinear Schrödinger equation to include the effect of a fiber Bragg grating whose bandgap is much smaller than the pulse bandwidth. The grating generates a slow dispersive wave which may be computed from an integral over the unperturbed solution if nonlinear interaction between the grating and unperturbed waves is negligible. Our approach allows rapid estimation of large grating continuum enhancement peaks from a single nonlinear simulation of the waveguide without grating. We apply our method to uniform and sampled gratings, finding good agreement with full nonlinear simulations, and qualitatively reproducing experimental results.

Nanographene-Based Saturable Absorbers for Ultrafast Fiber Lasers

Directory of Open Access Journals (Sweden)

Hsin-Hui Kuo

2014-01-01

Full Text Available The generation of femtosecond pulse laser in the erbium-doped fiber laser system is presented by integrating of the nanographene-based saturable absorbers (SAs. A simplified method of dispersed nanographene-based SAs side-polished fiber device with controllable polished length and depth was also developed. The dependence of geometry of a graphene-deposited side-polished fiber device on optical nonlinear characteristics and on the performance of the MLFL was screened. We found that the 10 mm polished length with 1.68 dB insertion loss had the highest modulation depth (MD of 1.2%. A stable MLFL with graphene-based SAs employing the optimized side-polished fiber device showed a pulse width, a 3 dB bandwidth, a time-bandwidth product (TBP, a repetition rate, and pulse energy of 523 fs, 5.4 nm, 0.347, 16.7 MHz, and 0.18 nJ, respectively, at fundamental soliton-like operation. The femtosecond pulse laser is achieved by evanescent field coupling through graphene-deposited side-polished fiber devices in the laser cavity. This study demonstrates that the polished depth is the key fabrication geometric parameter affecting the overall optical performance and better results exist within the certain polished range.

Design and Fabrication of Calibration Device for Scintillating Fibers of Tagger Microscope: For use in GlueX's QCD Experiment

Science.gov (United States)

Briere, Emily

2012-10-01

For decades, scientists have struggled to understand the chromo-electromagnetic field which confines quarks and gluons within the hadron. GlueX is a QCD experiment centered at Jefferson Lab, Virginia, seeking to better understand this gluonic field by exciting it and mapping the spectrum of exotic hybrid mesons that it generates. The experiment uses coherent bremsstrahlung radiation to produce a beam of photons, which due to their polarity act as virtual vector mesons. When incident on a liquid hydrogen target, these mesons are expected to form exotic hybrid mesons. Such particles quickly decay into new particles which are captured in a solenoid detector. The decays can then be reconstructed to examine the properties of the original exotic hybrid meson, although the initial energy of the photon is required to draw meaningful conclusions. The post-bremsstrahlung degraded electrons are bent from the main beam into the tagger microscope where they strike an array of scintillating optical fibers. Given the correlation between momentum and radial bend, the Silicon Photmultiplier sensors attached to the optical fibers are able to ``tag'' the electrons', and thus the photons', initial energies based on which fibers were hit. Providing central data for GlueX, the tagger microscope must be accurate. This paper details the design and fabrication of a scintillating fiber calibration device that moves horizontally above fiber bundles, using a green laser diode to direct light pulses into the fibers. This calibration method has been tested mechanically and via a Monte Carlo Matlab simulation, and has proven to be effective.

Optical fiber sensors for IoT and smart devices

CERN Document Server

Domingues, Maria de Fátima F

2017-01-01

This brief provides a review of the evolution of optical fiber sensing solutions and related applications. Unique production methods are presented and discussed, highlighting their evolution and analyzing their complexity. Under this scope, this brief presents the existing silica optical fiber sensors and polymer optical fiber sensors solutions, comparing its field of action (sensitivity, accuracy), complexity of manufacture and economic cost. Special attention is given to low-cost production methods. This brief evaluates the different existing techniques, assessing the accuracy and suitability of these sensors for possible Internet of Things (IoT) integration in different considered scenarios. Critical analytical techniques, also covered in this brief, are expected to play a key role in the world of IoT and the smart city of tomorrow.

Complete low-frequency bandgap in a two-dimensional phononic crystal with spindle-shaped inclusions

Science.gov (United States)

Ting, Wang; Hui, Wang; Mei-Ping, Sheng; Qing-Hua, Qin

2016-04-01

A two-dimensional phononic crystal (PC) structure possessing a relatively low frequency range of complete bandgap is presented. The structure is composed of periodic spindle-shaped plumbum inclusions in a rubber matrix which forms a square lattice. The dispersion relation, transmission spectrum and displacement field are studied using the finite element method in conjunction with the Bloch theorem. Numerical results show that the present PC structure can achieve a large complete bandgap in a relatively low frequency range compared with two inclusions of different materials, which is useful in low-frequency noise and vibration control and can be designed as a low frequency acoustic filter and waveguides. Moreover, the transmission spectrum and effective mass are evaluated to validate the obtained band structure. It is interesting to see that within the band gap the effective mass becomes negative, resulting in an imaginary wave speed and wave exponential attenuation. Finally, sensitivity analysis of the effect of geometrical parameters of the presented PC structure on the lowest bandgap is performed to investigate the variations of the bandgap width and frequency. Project supported by the China Scholarship Council.

Graded band-gap engineering for increased efficiency in CZTS solar cells

Science.gov (United States)

Ferhati, H.; Djeffal, F.

2018-02-01

In this paper, we propose a potential high efficiency Cu2ZnSn(S,Se)4/CdS (CZTS) solar cell design based on graded band-gap engineering that can offer the benefits of improved absorption behavior and reduced recombination effects. Moreover, a new hybrid approach based on analytical modeling and Particle Swarm Optimization (PSO) is proposed to determinate the optimal band-gap profile of the amended CZTS absorber layer to achieve further efficiency enhancement. It is found that the proposed design exhibits superior performance, where a high efficiency of 16.9% is recorded for the optimized solar cell with a relative improvement of 92%, compared with the reference cell efficiency of 8.8%. Likewise, the optimized CZTS solar cell with a graded band-gap enables achieving a higher open circuit voltage of 889 mV, a short-circuit current of 28.5 mA and a fill factor of 66%. Therefore, the optimized CZTS-based solar cell with graded-band gap paradigm pinpoints a new path toward recording high-efficiency thin-film solar cells through enhancing carrier collection and reducing the recombination rate.

Temperature-modified photonic bandgap in colloidal photonic crystals fabricated by vinyl functionalized silica spheres

International Nuclear Information System (INIS)

Deng Tiansong; Zhang Junyan; Zhu Kongtao; Zhang Qifeng; Wu Jinlei

2011-01-01

Graphical abstract: A thermal annealing procedure was described for fine modifying the photonic bandgap properties of colloidal photonic crystals, which were self-assembled from vinyl-functionalized silica spheres by a gravity sedimentation process. Highlights: → We described a thermal annealing procedure for fine modifying the photonic bandgap properties of colloidal photonic crystals. → The position of its stop band had more than 25% blue shift by annealing the sample from 60 to 600 deg. C. → The annealing temperature and the Bragg peak values have a linear relationship in the 120-440 deg. C range. → The effects provide a simple and controllable method for modifying the photonic bandgap properties of colloidal photonic crystals. - Abstract: A thermal annealing procedure for fine modifying the photonic bandgap properties of colloidal photonic crystals was described. The colloidal photonic crystals were assembled from monodisperse vinyl functionalized silica spheres by a gravity sedimentation process. The samples diffract light following Bragg's law combined with Snell's law. By annealing the sample at temperatures in the range of 60-600 deg. C, the position of its stop band shifted from 943 to 706 nm. It had more than 25% blue shift. In addition, the annealing temperature and the Bragg peak values have a linear relationship in the 120-440 deg. C range. Fourier transform infrared (FT-IR) spectra and thermo-gravimetric analysis (TGA) curves of vinyl functionalized silica spheres confirmed the above results. The effects provide a simple and controllable method for modifying the photonic bandgap properties of colloidal photonic crystals.

Semi-transparent polymer solar cells with excellent sub-bandgap transmission for third generation photovoltaics

KAUST Repository

Beiley, Zach M.

2013-10-07

Semi-transparent organic photovoltaics are of interest for a variety of photovoltaic applications, including solar windows and hybrid tandem photovoltaics. The figure shows a photograph of our semi-transparent solar cell, which has a power conversion efficiency of 5.0%, with an above bandgap transmission of 34% and a sub-bandgap transmission of 81%. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits

Science.gov (United States)

Cui, Xiao; Zhang, Can; Liang, Song; Zhu, Hong-Liang; Hou, Lian-Ping

2014-04-01

Impurity-free intermixing of InGaAsP multiple quantum wells (MQW) using sputtering Cu/SiO2 layers followed by rapid thermal processing (RTP) is demonstrated. The bandgap energy could be modulated by varying the sputtering power and time of Cu, RTP temperature and time to satisfy the demands for lasers, modulators, photodetector, and passive waveguides for the photonic integrated circuits with a simple procedure. The blueshift of the bandgap wavelength of MQW is experimentally investigated on different sputtering and annealing conditions. It is obvious that the introduction of the Cu layer could increase the blueshift more greatly than the common impurity free vacancy disordering technique. A maximum bandgap blueshift of 172 nm is realized with an annealing condition of 750°C and 200s. The improved technique is promising for the fabrication of the active/passive optoelectronic components on a single wafer with simple process and low cost.

Magneto-Optic Fiber Gratings Useful for Dynamic Dispersion Management and Tunable Comb Filtering

International Nuclear Information System (INIS)

Bao-Jian, Wu; Xin, Lu; Kun, Qiu

2010-01-01

Intelligent control of dispersion management and tunable comb filtering in optical network applications can be performed by using magneto-optic fiber Bragg gratings (MFBGs). When a nonuniform magnetic field is applied to the MFBG with a constant grating period, the resulting grating response is equivalent to that of a conventional chirped grating. Under a linearly nonuniform magnetic field along the grating, a linear dispersion is achieved in the grating bandgap and the maximal dispersion slope can come to 1260 ps/nm 2 for a 10-mm-long fiber grating at 1550 nm window. Similarly, a Gaussian-apodizing sampled MFBG is also useful for magnetically tunable comb filtering, with potential application to clock recovery from return-to-zero optical signals and optical carrier tracking. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

A phase mask fiber grating and sensing applications

Directory of Open Access Journals (Sweden)

Preecha P. Yupapin

2003-09-01

Full Text Available This paper presents an investigation of a fabricated fiber grating device characteristics and its applications, using a phase mask writing technique. The use of a most common UV phase laser (KrF eximer laser, with high intensity light source was focussed to the phase mask for writing on a fiber optic sample. The device (i.e. grating characteristic especially, in sensing application, was investigated. The possibility of using such device for temperature and strain sensors is discussed.

In-line microfluidic refractometer based on C-shaped fiber assisted photonic crystal fiber Sagnac interferometer.

Science.gov (United States)

Wu, Chuang; Tse, Ming-Leung Vincent; Liu, Zhengyong; Guan, Bai-Ou; Lu, Chao; Tam, Hwa-Yaw

2013-09-01

We propose and demonstrate a highly sensitive in-line photonic crystal fiber (PCF) microfluidic refractometer. Ultrathin C-shaped fibers are spliced in-between the PCF and standard single-mode fibers. The C-shaped fibers provide openings for liquid to flow in and out of the PCF. Based on a Sagnac interferometer, the refractive index (RI) response of the device is investigated theoretically and experimentally. A high sensitivity of 6621 nm/RIU for liquid RI from 1.330 to 1.333 is achieved in the experiment, which agrees well with the theoretical analysis.

Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications

Science.gov (United States)

Wellmann, Peter; Syväjärvi, Mikael; Ou, Haiyan

2014-03-01

silicon oxycarbide material can provide potential applications of the Eu luminescent materials to challenging conditions like high temperatures or aggressive environments where the silica has weaknesses. In some approaches, silicon rich silicon oxide that contain silicon nanoclusters emit red to near infrared luminescence due to quantum confinement effects while luminescence at shorter wavelength is difficult due to the interplay of defects and quantum confinement effects. In addition it is applicable as low-k dielectric, etch-stop and passivation layers. It also has an optical band-gap that is smaller than that of SiO2 which may facilitate carrier injection at lower voltages that is suitable for optoelectronics. From materials perspective of emerging materials, it seems distant to consider system related issues. The future demands on communication and lighting devices require higher information flows in modernized optical devices, for example by replacing electrical interconnects with their optical counterparts and tunable backgrounds filters for integrated optics or photonics applications. However, there are materials issues related to such device performance, for example by a non-linearity, that provide the possibility for selective removal or addition of wavelengths using hetero structures in which one side of the structure enhances the light-to-dark sensitivity of long and medium wavelength channels and diminish others, and an opposite behavior in other face of the structure. Certainly materials may be applied in various innovative ways to provide new performances in devices and systems. In any materials and device evaluation, reliability issues in passivation and packaging of semiconductor device structures provide a base knowledge that may be used to evaluate new concepts. Fundamental aspects of dielectric constant, bandgap and band offsets between the valence and conduction band edges between the passivation layer and the semiconductor create a foundation for

Effects of Ge- and Sb-doping and annealing on the tunable bandgaps of SnS films

Energy Technology Data Exchange (ETDEWEB)

Hsu, Hsuan-Tai; Chiang, Ming-Hung; Huang, Chen-Hao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Lin, Wen-Tai, E-mail: wtlin@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Fu, Yaw-Shyan [Department of Greenergy, National University of Tainan, Tainan 700, Taiwan (China); Guo, Tzung-Fang [Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China)

2015-06-01

SnS, Ge- and Sb-doped SnS films with single orthorhombic SnS phase were fabricated via solvothermal routes and subsequent spin-coating, respectively. The substitution solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. The bandgaps of Ge- and Sb-doped SnS films can be tuned in the ranges of 1.25–1.35 and 1.30–1.39 eV, respectively. The possible mechanisms for the tunable bandgaps of Ge- and Sb-doped SnS films are discussed. For the Ge- and Sb-doped SnS films subjected to annealing at 200–350 °C in N{sub 2}, the bandgaps of 200 °C-annealed films remain unchanged, while those of 300 °C- and 350 °C-annealed films decrease with the annealing temperature because of the evaporation of Ge and Sb respectively. - Highlights: • Ge- and Sb-doped SnS films were fabricated via spin-coating. • The solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. • The bandgaps of SnS films can be tuned by Ge and Sb doping respectively. • Annealing above 300 °C reduces the bandgaps of Ge- and Sb-doped SnS films.

Small-bandgap semiconducting polymers with high near-infrared photoresponse

NARCIS (Netherlands)

Hendriks, K.H.; Li, W.; Wienk, M.M.; Janssen, R.A.J.

2014-01-01

Lowering the optical bandgap of conjugated polymers while maintaining a high efficiency for photoinduced charge transfer to suitable electron acceptors such as fullerene has remained a formidable challenge in the area of organic photovoltaics. Here we present the synthesis and application of a

Bandgap Opening in Graphene Induced by Patterned Hydrogen Adsorption

DEFF Research Database (Denmark)

Balog, Richard; Jørgensen, Bjarke; Nilsson, Louis

2010-01-01

fermions, and graphene shows ballistic charge transport, turning it into an ideal material for circuit fabrication. However, graphene lacks a bandgap around the Fermi level, which is the defining concept for semiconductor materials and essential for controlling the conductivity by electronic means. Theory...

Band-gap tunable dielectric elastomer filter for low frequency noise

Science.gov (United States)

Jia, Kun; Wang, Mian; Lu, Tongqing; Zhang, Jinhua; Wang, Tiejun

2016-05-01

In the last decades, diverse materials and technologies for sound insulation have been widely applied in engineering. However, suppressing the noise radiation at low frequency still remains a challenge. In this work, a novel membrane-type smart filter, consisting of a pre-stretched dielectric elastomer membrane with two compliant electrodes coated on the both sides, is presented to control the low frequency noise. Since the stiffness of membrane dominates its acoustic properties, sound transmission band-gap of the membrane filter can be tuned by adjusting the voltage applied to the membrane. The impedance tube experiments have been carried out to measure the sound transmission loss (STL) of the filters with different electrodes, membrane thickness and pre-stretch conditions. The experimental results show that the center frequency of sound transmission band-gap mainly depends on the stress in the dielectric elastomer, and a large band-gap shift (more than 60 Hz) can be achieved by tuning the voltage applied to the 85 mm diameter VHB4910 specimen with pre-stretch {λ }0=3. Based on the experimental results and the assumption that applied electric field is independent of the membrane behavior, 3D finite element analysis has also been conducted to calculate the membrane stress variation. The sound filter proposed herein may provide a promising facility to control low frequency noise source with tonal characteristics.

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

Science.gov (United States)

Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland; Sekula-Moise, Patricia A.; Vernon, Stanley M.

1990-01-01

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects

Science.gov (United States)

Kaleem, Mohammad; Nazir, Sajid; Saqib, Nazar Abbas

2016-03-01

Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (λ= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.

Water-dependent photonic bandgap in silica artificial opals.

Science.gov (United States)

Gallego-Gómez, Francisco; Blanco, Alvaro; Canalejas-Tejero, Victor; López, Cefe

2011-07-04

Some characteristics of silica--based structures-like the photonic properties of artificial opals formed by silica spheres--can be greatly affected by the presence of adsorbed water. The reversible modification of the water content of an opal is investigated here by moderate heating (below 300 °C) and measuring in situ the changes in the photonic bandgap. Due to reversible removal of interstitial water, large blueshifts of 30 nm and a bandgap narrowing of 7% are observed. The latter is particularly surprising, because water desorption increases the refractive index contrast, which should lead instead to bandgap broadening. A quantitative explanation of this experiment is provided using a simple model for water distribution in the opal that assumes a nonclose-packed fcc structure. This model further predicts that, at room temperature, about 50% of the interstitial water forms necks between nearest-neighbor spheres, which are separated by 5% of their diameter. Upon heating, dehydration predominantly occurs at the sphere surfaces (in the opal voids), so that above 65 °C the remaining water resides exclusively in the necks. A near-close-packed fcc arrangement is only achieved above 200 °C. The high sensitivity to water changes exhibited by silica opals, even under gentle heating of few degrees, must be taken into account for practical applications. Remarkably, accurate control of the distance between spheres--from 16 to 1 nm--is obtained with temperature. In this study, novel use of the optical properties of the opal is made to infer quantitative information about water distribution within silica beads and dehydration phenomena from simple reflection spectra. Taking advantage of the well-defined opal morphology, this approach offers a simple tool for the straightforward investigation of generic adsorption-desorption phenomena, which might be extrapolated to many other fields involving capillary condensation. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGa

Tapered silicon core fibers with nano-spikes for optical coupling via spliced silica fibers

OpenAIRE

Ren, Haonan; Aktas, Ozan; Franz, Yohann; Runge, Antoine; Hawkins, Thomas A.; Ballato, John; Gibson, Ursula; Peacock, Anna

2017-01-01

Abstract: Reported here is the fabrication of tapered silicon core fibers possessing a nanospike input that facilitates their seamless splicing to conventional single mode fibers. A proofof-concept 30 µm cladding diameter fiber-based device is demonstrated with nano-spike coupling and propagation losses below 4 dB and 2 dB/cm, respectively. Finite-elementmethod-based simulations show that the nano-spike coupling losses could be reduced to below 1 dB by decreasing the cladding diameters down t...

Creation of tunable absolute bandgaps in a two-dimensional anisotropic photonic crystal modulated by a nematic liquid crystal

International Nuclear Information System (INIS)

Liu Chenyang

2008-01-01

Photonic crystals (PCs) have many potential applications because of their ability to control light-wave propagation. We have investigated the tunable absolute bandgap in a two-dimensional anisotropic photonic crystal structures modulated by a nematic liquid crystal. The PC structure composed of an anisotropic-dielectric cylinder in the liquid crystal medium is studied by solving Maxwell's equations using the plane wave expansion method. The photonic band structures are found to exhibit absolute bandgaps for the square and triangular lattices. Numerical simulations show that the absolute bandgaps can be continuously tuned in the square and triangular lattices consisting of anisotropic-dielectric cylinders by infiltrating nematic liquid crystals. Such a mechanism of bandgap adjustment should open up a new application for designing components in photonic integrated circuits

Conjugated polymer photovoltaic devices and materials

International Nuclear Information System (INIS)

Mozer, A.J.; Niyazi, Serdar Sariciftci

2006-01-01

The science and technology of conjugated polymer-based photovoltaic devices (bulk heterojunction solar cells) is highlighted focusing on three major issues, i.e. (i) nano-morphology optimization, (ii) improving charge carrier mobility, (iii) improving spectral sensitivity. Successful strategies towards improved photovoltaic performance are presented using various novel materials, including double-cable polymers, regioregular polymers and low bandgap polymers. The examples presented herein demonstrate that the bulk heterojunction concept is a viable approach towards developing photovoltaic systems by inexpensive solution-based fabrication technologies. (authors)

Biosensing with optical fiber gratings

Science.gov (United States)

Chiavaioli, Francesco; Baldini, Francesco; Tombelli, Sara; Trono, Cosimo; Giannetti, Ambra

2017-06-01

Optical fiber gratings (OFGs), especially long-period gratings (LPGs) and etched or tilted fiber Bragg gratings (FBGs), are playing an increasing role in the chemical and biochemical sensing based on the measurement of a surface refractive index (RI) change through a label-free configuration. In these devices, the electric field evanescent wave at the fiber/surrounding medium interface changes its optical properties (i.e. intensity and wavelength) as a result of the RI variation due to the interaction between a biological recognition layer deposited over the fiber and the analyte under investigation. The use of OFG-based technology platforms takes the advantages of optical fiber peculiarities, which are hardly offered by the other sensing systems, such as compactness, lightness, high compatibility with optoelectronic devices (both sources and detectors), and multiplexing and remote measurement capability as the signal is spectrally modulated. During the last decade, the growing request in practical applications pushed the technology behind the OFG-based sensors over its limits by means of the deposition of thin film overlays, nanocoatings, and nanostructures, in general. Here, we review efforts toward utilizing these nanomaterials as coatings for high-performance and low-detection limit devices. Moreover, we review the recent development in OFG-based biosensing and identify some of the key challenges for practical applications. While high-performance metrics are starting to be achieved experimentally, there are still open questions pertaining to an effective and reliable detection of small molecules, possibly up to single molecule, sensing in vivo and multi-target detection using OFG-based technology platforms.

Biosensing with optical fiber gratings

Directory of Open Access Journals (Sweden)

Chiavaioli Francesco

2017-06-01

Full Text Available Optical fiber gratings (OFGs, especially long-period gratings (LPGs and etched or tilted fiber Bragg gratings (FBGs, are playing an increasing role in the chemical and biochemical sensing based on the measurement of a surface refractive index (RI change through a label-free configuration. In these devices, the electric field evanescent wave at the fiber/surrounding medium interface changes its optical properties (i.e. intensity and wavelength as a result of the RI variation due to the interaction between a biological recognition layer deposited over the fiber and the analyte under investigation. The use of OFG-based technology platforms takes the advantages of optical fiber peculiarities, which are hardly offered by the other sensing systems, such as compactness, lightness, high compatibility with optoelectronic devices (both sources and detectors, and multiplexing and remote measurement capability as the signal is spectrally modulated. During the last decade, the growing request in practical applications pushed the technology behind the OFG-based sensors over its limits by means of the deposition of thin film overlays, nanocoatings, and nanostructures, in general. Here, we review efforts toward utilizing these nanomaterials as coatings for high-performance and low-detection limit devices. Moreover, we review the recent development in OFG-based biosensing and identify some of the key challenges for practical applications. While high-performance metrics are starting to be achieved experimentally, there are still open questions pertaining to an effective and reliable detection of small molecules, possibly up to single molecule, sensing in vivo and multi-target detection using OFG-based technology platforms.

21 CFR 878.3500 - Polytetrafluoroethylene with carbon fibers composite implant material.

Science.gov (United States)

2010-04-01

... composite implant material. 878.3500 Section 878.3500 Food and Drugs FOOD AND DRUG ADMINISTRATION... Prosthetic Devices § 878.3500 Polytetrafluoroethylene with carbon fibers composite implant material. (a) Identification. A polytetrafluoroethylene with carbon fibers composite implant material is a porous device...

The CritiView: a new fiber optic based optical device for the assessment of tissue vitality

Science.gov (United States)

Mayevsky, Avraham; Blum, Yoram; Dekel, Nava; Deutsch, Assaf; Halfon, Rafael; Kremer, Shlomi; Pewzner, Eliyahu; Sherman, Efrat; Barnea, Ofer

2006-02-01

The most important parameter that reflects the balance between oxygen supply and demand in tissues is the mitochondrial NADH redox state that could be monitored In vivo. Nevertheless single parameter monitoring is limited in the interpretation capacity of the very complicated pathophysiological events, therefore three more parameters were added to the NADH and the multiparametric monitoring system was used in experimental and clinical studies. In our previous paper1 we described the CritiView (CRV1) including a fiber optic probe that monitor four physiological parameters in real time. In the new model (CRV3) several factors such as UV safety, size and price of the device were improved significantly. The CRV3 enable to monitor the various parameters in three different locations in the tissue thus increasing the reliability of the data due to the better statistics. The connection between the device and the monitored tissue could be done by various types of probes. The main probe that was tested also in clinical studies was a special 3 points probe that includes 9 optical fibers (3 in each point) that was embedded in a three way Foley catheter. This catheter enabled the monitoring of urethral wall vitality as an indicator of the development of body metabolic emergency state. The three point probe was tested in the brain exposed to the lack of oxygen (Anoxia, Hypoxia or Ischemia). A decrease in blood oxygenation and a large increase in mitochondrial NADH fluorescence were recorded. The microcirculatory blood flow increased during anoxia and hypoxia and decreased significantly under ischemia.

Direct writing of half-meter long CNT based fiber for flexible electronics.

Science.gov (United States)

Huang, Sihan; Zhao, Chunsong; Pan, Wei; Cui, Yi; Wu, Hui

2015-03-11

Rapid construction of flexible circuits has attracted increasing attention according to its important applications in future smart electronic devices. Herein, we introduce a convenient and efficient "writing" approach to fabricate and assemble ultralong functional fibers as fundamental building blocks for flexible electronic devices. We demonstrated that, by a simple hand-writing process, carbon nanotubes (CNTs) can be aligned inside a continuous and uniform polymer fiber with length of more than 50 cm and diameters ranging from 300 nm to several micrometers. The as-prepared continuous fibers exhibit high electrical conductivity as well as superior mechanical flexibility (no obvious conductance increase after 1000 bending cycles to 4 mm diameter). Such functional fibers can be easily configured into designed patterns with high precision according to the easy "writing" process. The easy construction and assembly of functional fiber shown here holds potential for convenient and scalable fabrication of flexible circuits in future smart devices like wearable electronics and three-dimensional (3D) electronic devices.

Study of shape memory alloy fibers for the development of artificial myocardium.

Science.gov (United States)

Hassoulas, Ioannis A; Ladopoulos, Vlassios S; Kalogerakos, Paris-Dimitrios K

2010-01-01

Circulatory support devices are employed to treat heart failure. Such a device could be made from shape memory alloy (SMA) fibers. These Ni-Ti fibers contract when electric current flows through them, thus resembling artificial muscles. An artificial myocardium device made from SMA fibers can directly compress the epicardial surface of a failing heart, thus contributing to the pumping action. Unlike modern mechanical circulatory support devices, there is no blood-contacting surface to provoke thromboembolism, hemorrhage, inflammatory response or hemolysis. The experimental setup permitted a detailed study of a sample SMA fiber with great accuracy while the ambient temperature was controlled to resemble that of the human body. The current profile through the fiber was controlled (current shaping, CS) by a microcontroller and a portable computer. Parameters such as strain, contraction and relaxation velocities and the effect of ambient temperature were measured. The contraction and relaxation velocities were measured after applying various effective currents. It was found that the contraction velocity could be manipulated to reach that of the healthy myocardium through CS. On the other hand, the relaxation velocity was independent of the contraction velocity. A cardiac assist device can be made from SMA fibers. More studies need to be conducted in this direction.

Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions.

Science.gov (United States)

Tang, Janika; Thakore, Vaibhav; Ala-Nissila, Tapio

2017-07-18

Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57-65% for the incident blackbody radiation from sources at temperatures in the range 400-1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics.

Adaptable Optical Fiber Displacement-Curvature Sensor Based on a Modal Michelson Interferometer with a Tapered Single Mode Fiber.

Science.gov (United States)

Salceda-Delgado, G; Martinez-Rios, A; Selvas-Aguilar, R; Álvarez-Tamayo, R I; Castillo-Guzman, A; Ibarra-Escamilla, B; Durán-Ramírez, V M; Enriquez-Gomez, L F

2017-06-02

A compact, highly sensitive optical fiber displacement and curvature radius sensor is presented. The device consists of an adiabatic bi-conical fused fiber taper spliced to a single-mode fiber (SMF) segment with a flat face end. The bi-conical taper structure acts as a modal coupling device between core and cladding modes for the SMF segment. When the bi-conical taper is bent by an axial displacement, the symmetrical bi-conical shape of the tapered structure is stressed, causing a change in the refractive index profile which becomes asymmetric. As a result, the taper adiabaticity is lost, and interference between modes appears. As the bending increases, a small change in the fringe visibility and a wavelength shift on the periodical reflection spectrum of the in-fiber interferometer is produced. The displacement sensitivity and the spectral periodicity of the device can be adjusted by the proper selection of the SMF length. Sensitivities from around 1.93 to 3.4 nm/mm were obtained for SMF length between 7.5 and 12.5 cm. Both sensor interrogations, wavelength shift and visibility contrast, can be used to measure displacement and curvature radius magnitudes.

[INVITED] Tilted fiber grating mechanical and biochemical sensors

Science.gov (United States)

Guo, Tuan; Liu, Fu; Guan, Bai-Ou; Albert, Jacques

2016-04-01

The tilted fiber Bragg grating (TFBG) is a new kind of fiber-optic sensor that possesses all the advantages of well-established Bragg grating technology in addition to being able to excite cladding modes resonantly. This device opens up a multitude of opportunities for single-point sensing in hard-to-reach spaces with very controllable cross-sensitivities, absolute and relative measurements of various parameters, and an extreme sensitivity to materials external to the fiber without requiring the fiber to be etched or tapered. Over the past five years, our research group has been developing multimodal fiber-optic sensors based on TFBG in various shapes and forms, always keeping the device itself simple to fabricate and compatible with low-cost manufacturing. This paper presents a brief review of the principle, fabrication, characterization, and implementation of TFBGs, followed by our progress in TFBG sensors for mechanical and biochemical applications, including one-dimensional TFBG vibroscopes, accelerometers and micro-displacement sensors; two-dimensional TFBG vector vibroscopes and vector rotation sensors; reflective TFBG refractometers with in-fiber and fiber-to-fiber configurations; polarimetric and plasmonic TFBG biochemical sensors for in-situ detection of cell, protein and glucose.

Thermally evaporated thin films of SnS for application in solar cell devices

International Nuclear Information System (INIS)

Miles, Robert W.; Ogah, Ogah E.; Zoppi, Guillaume; Forbes, Ian

2009-01-01

SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy bandgap phases e.g. SnS 2 , Sn 2 S 3 and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. In this work thin films of tin sulphide have been thermally evaporated onto glass and SnO 2 :coated glass substrates with the aim of optimising the properties of the material for use in photovoltaic solar cell device structures. In particular the effects of source temperature, substrate temperature, deposition rate and film thickness on the chemical and physical properties of the layers were investigated. Energy dispersive X-ray analysis was used to determine the film composition, X-ray diffraction to determine the phases present and structure of each phase, transmittance and reflectance versus wavelength measurements to determine the energy bandgap and scanning electron microscopy to observe the surface topology and topography and the properties correlated to the deposition parameters. Using the optimised conditions it is possible to produce thin films of tin sulphide that are pinhole free, conformal to the substrate and that consist of densely packed columnar grains. The composition, phases present and the optical properties of the layers deposited were found to be highly sensitive to the deposition conditions. Energy bandgaps in the range 1.55 eV-1.7 eV were obtained for a film thickness of 0.8 μm, and increasing the film thickness to > 1 μm resulted in a reduction of the energy bandgap to less than 1.55 eV. The applicability of using these films in photovoltaic solar cell device structures is also discussed.

Fiber-top cantilever: a new generation of micromachined sensors for multipurpose applications

NARCIS (Netherlands)

Iannuzzi, D.; Deladi, S.; Schreuders, H.; Slaman, M.; Rector, J.H.; Elwenspoek, Michael Curt

2006-01-01

Fiber-top cantilevers are new monolithic devices obtained by carving a cantilever out of the edge of a single-mode optical fiber. Here we report evidences of their potential impact as sensing devices for multipurpose applications.

Femtosecond Laser Structuring in Optical Fiber and Transparent Films

Directory of Open Access Journals (Sweden)

Herman Peter R.

2013-11-01

Full Text Available Femtosecond laser processing is optimized for writing optical circuits, optical resonators, and microfluidic devices inside the cladding of single-mode optical fiber that couple efficiently with the fiber core waveguide. The laser processes open new directions towards Labon-a-Fiber.

Field Performance versus Standard Test Condition Efficiency of Tandem Solar Cells and the Specific Case of Perovskites/Silicon Devices

KAUST Repository

Dupre, Olivier

2018-01-05

Multijunction cells may offer a cost-effective route to boost the efficiency of industrial photovoltaics. For any technology to be deployed in the field, its performance under actual operating conditions is extremely important. In this perspective, we evaluate the impact of spectrum, light intensity, and module temperature variations on the efficiency of tandem devices with crystalline silicon bottom cells with a particular focus on perovskite top cells. We consider devices with different efficiencies and calculate their energy yields using field data from Denver. We find that annual losses due to differences between operating conditions and standard test conditions are similar for single-junction and four-terminal tandem devices. The additional loss for the two-terminal tandem configuration caused by current mismatch reduces its performance ratio by only 1.7% when an optimal top cell bandgap is used. Additionally, the unusual bandgap temperature dependence of perovskites is shown to have a positive, compensating effect on current mismatch.

A fiber-coupled quantum-dot on a photonic tip

DEFF Research Database (Denmark)

Cadeddu, Davide; Teissier, Jean; Braakman, Floris R.

2016-01-01

We present the experimental realization of a quantum fiber-pigtail. The device consists of a semiconductor quantum-dot embedded into a conical photonic wire that is directly connected to the core of a fiber-pigtail. We demonstrate a photon collection efficiency at the output of the fiber of 5.......8% and suggest realistic improvements for the implementation of a useful device in the context of quantum information. We also discuss potential applications in scanning probe microscopy. The approach is generic and transferable to other materials including diamond and silicon....

A fiber-coupled quantum-dot on a photonic tip

Energy Technology Data Exchange (ETDEWEB)

Cadeddu, Davide; Teissier, Jean; Braakman, Floris R.; Warburton, Richard J.; Poggio, Martino; Munsch, Mathieu [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland); Gregersen, Niels [DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, Building 343, DK-2800 Kongens Lyngby (Denmark); Stepanov, Petr; Gérard, Jean-Michel; Claudon, Julien [Université Grenoble Alpes, F-38100 Grenoble (France); CEA, INAC-SP2M, 17 rue des Martyrs, F-38054 Grenoble (France)

2016-01-04

We present the experimental realization of a quantum fiber-pigtail. The device consists of a semiconductor quantum-dot embedded into a conical photonic wire that is directly connected to the core of a fiber-pigtail. We demonstrate a photon collection efficiency at the output of the fiber of 5.8% and suggest realistic improvements for the implementation of a useful device in the context of quantum information. We also discuss potential applications in scanning probe microscopy. The approach is generic and transferable to other materials including diamond and silicon.

Multiwavelength mode-locked erbium-doped fiber laser based on the interaction of graphene and fiber-taper evanescent field

International Nuclear Information System (INIS)

Luo, Z Q; Wang, J Z; Zhou, M; Xu, H Y; Cai, Z P; Ye, C C

2012-01-01

We report on the generation of multiwavelength passively mode-locked pulses in an erbium-doped fiber laser (EDFL) based on the interaction of graphene and fiber-taper evanescent field. Graphene-polymer nanocomposites in aqueous suspension are trapped by the optical evanescent light and deposited on taper region. The graphene-deposited fiber-taper device not only acts as an excellent saturable absorber for mode-locking, but also induces a polarizing effect to form an artificial birefringent filter for multiwavelength selection. By simultaneously exploiting both functions of this device, four-wavelength continuous-wave mode-locking operation of an EDFL is stably initiated with a pulse width of 8.8 ps and a fundamental repetition rate of 8.034 MHz. This is the first time, to our knowledge, the mode-locked EDFL using such a new geometry of graphene-based tapered-fiber saturable absorber has been demonstrated

Theoretical prediction of sandwiched two-dimensional phosphide binary compound sheets with tunable bandgaps and anisotropic physical properties

Science.gov (United States)

Zhang, C. Y.; Yu, M.

2018-03-01

Atomic layers of GaP and InP binary compounds with unique anisotropic structural, electronic and mechanical properties have been predicted from first-principle molecular dynamics simulations. These new members of the phosphide binary compound family stabilize to a sandwiched two-dimensional (2D) crystalline structure with orthorhombic lattice symmetry and high buckling of 2.14 Å-2.46 Å. Their vibration modes are similar to those of phosphorene with six Raman active modes ranging from ˜80 cm-1 to 400 cm-1. The speeds of sound in their phonon dispersions reflect anisotropy in their elastic constants, which was further confirmed by their strong directional dependence of Young’s moduli and effective nonlinear elastic moduli. They show wide bandgap semiconductor behavior with fundamental bandgaps of 2.89 eV for GaP and 2.59 eV for InP, respectively, even wider than their bulk counterparts. Such bandgaps were found to be tunable under strain. In particular, a direct-indirect bandgap transition was found under certain strains along zigzag or biaxial orientations, reflecting their promising applications in strain-induced bandgap engineering in nanoelectronics and photovoltaics. Feasible pathways to realize these novel 2D phosphide compounds are also proposed.

Quantitative radiographic analysis of fiber reinforced polymer composites.

Science.gov (United States)

Baidya, K P; Ramakrishna, S; Rahman, M; Ritchie, A

2001-01-01

X-ray radiographic examination of the bone fracture healing process is a widely used method in the treatment and management of patients. Medical devices made of metallic alloys reportedly produce considerable artifacts that make the interpretation of radiographs difficult. Fiber reinforced polymer composite materials have been proposed to replace metallic alloys in certain medical devices because of their radiolucency, light weight, and tailorable mechanical properties. The primary objective of this paper is to provide a comparable radiographic analysis of different fiber reinforced polymer composites that are considered suitable for biomedical applications. Composite materials investigated consist of glass, aramid (Kevlar-29), and carbon reinforcement fibers, and epoxy and polyether-ether-ketone (PEEK) matrices. The total mass attenuation coefficient of each material was measured using clinical X-rays (50 kev). The carbon fiber reinforced composites were found to be more radiolucent than the glass and kevlar fiber reinforced composites.

Hollow fiber apparatus and use thereof for fluids separations and heat and mass transfers

Energy Technology Data Exchange (ETDEWEB)

Bikson, Benjamin; Etter, Stephen; Ching, Nathaniel

2017-04-18

A hollow fiber fluid separation device includes a hollow fiber cartridge, comprising a plurality of hollow fiber membranes arranged around a central tubular core, a first tubesheet and a second tubesheet encapsulating respective distal ends of the hollow fiber bundle. The tubesheets have boreholes in fluid communication with bores of the hollow fiber membrane. In at least one of the tubesheets, the boreholes are formed radially and are in communication with the central tubular core. The hollow fiber fluid separation device can be utilized in liquid separation applications such as ultrafiltration and in gas separation processes such as air separation. The design disclosed herein is light weight and compact and is particularly advantageous at high operating temperatures when the pressure of the feed fluid introduced into the bores of hollow fibers is higher than the pressure on the shell side of the device.

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device.

Science.gov (United States)

Groenendijk, Dirk J; Buscema, Michele; Steele, Gary A; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf; van der Zant, Herre S J; Castellanos-Gomez, Andres

2014-10-08

Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different groups have exploited the ambipolarity of WSe2 to realize electrically tunable PN junctions, demonstrating its potential for digital electronics and solar cell applications. In this Letter, we focus on the different photocurrent generation mechanisms in a double-gated WSe2 device by measuring the photocurrent (and photovoltage) as the local gate voltages are varied independently in combination with above- and below-bandgap illumination. This enables us to distinguish between two main photocurrent generation mechanisms, the photovoltaic and photothermoelectric effect. We find that the dominant mechanism depends on the defined gate configuration. In the PN and NP configurations, photocurrent is mainly generated by the photovoltaic effect and the device displays a maximum responsivity of 0.70 mA/W at 532 nm illumination and rise and fall times close to 10 ms. Photocurrent generated by the photothermoelectric effect emerges in the PP configuration and is a factor of 2 larger than the current generated by the photovoltaic effect (in PN and NP configurations). This demonstrates that the photothermoelectric effect can play a significant role in devices based on WSe2 where a region of strong optical absorption, caused by, for example, an asymmetry in flake thickness or optical absorption of the electrodes, generates a sizable thermal gradient upon illumination.

Advances in colloidal quantum dot solar cells: The depleted-heterojunction device

International Nuclear Information System (INIS)

Kramer, Illan J.; Pattantyus-Abraham, Andras G.; Barkhouse, Aaron R.; Wang, Xihua; Konstantatos, Gerasimos; Debnath, Ratan; Levina, Larissa; Raabe, Ines; Nazeeruddin, Md. K.; Graetzel, Michael; Sargent, Edward H.

2011-01-01

Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processibility with quantum size-effect tunability to match absorption with the solar spectrum. Recent advances in CQD photovoltaics have led to 3.6% AM1.5 solar power conversion efficiencies. Here we report CQD photovoltaic devices on transparent conductive oxides and show that our devices rely on the establishment of a depletion region for field-driven charge transport and separation. The resultant depleted-heterojunction solar cells provide a 5.1% AM1.5 power conversion efficiency. The devices employ infrared-bandgap size-effect-tuned PbS colloidal quantum dots, enabling broadband harvesting of the solar spectrum.

Earth-Abundant Chalcogenide Photovoltaic Devices with over 5% Efficiency Based on a Cu2 BaSn(S,Se)4 Absorber.

Science.gov (United States)

Shin, Donghyeop; Zhu, Tong; Huang, Xuan; Gunawan, Oki; Blum, Volker; Mitzi, David B

2017-06-01

In recent years, Cu 2 ZnSn(S,Se) 4 (CZTSSe) materials have enabled important progress in associated thin-film photovoltaic (PV) technology, while avoiding scarce and/or toxic metals; however, cationic disorder and associated band tailing fundamentally limit device performance. Cu 2 BaSnS 4 (CBTS) has recently been proposed as a prospective alternative large bandgap (~2 eV), environmentally friendly PV material, with ~2% power conversion efficiency (PCE) already demonstrated in corresponding devices. In this study, a two-step process (i.e., precursor sputter deposition followed by successive sulfurization/selenization) yields high-quality nominally pinhole-free films with large (>1 µm) grains of selenium-incorporated (x = 3) Cu 2 BaSnS 4- x Se x (CBTSSe) for high-efficiency PV devices. By incorporating Se in the sulfide film, absorber layers with 1.55 eV bandgap, ideal for single-junction PV, have been achieved within the CBTSSe trigonal structural family. The abrupt transition in quantum efficiency data for wavelengths above the absorption edge, coupled with a strong sharp photoluminescence feature, confirms the relative absence of band tailing in CBTSSe compared to CZTSSe. For the first time, by combining bandgap tuning with an air-annealing step, a CBTSSe-based PV device with 5.2% PCE (total area 0.425 cm 2 ) is reported, >2.5× better than the previous champion pure sulfide device. These results suggest substantial promise for the emerging Se-rich Cu 2 BaSnS 4- x Se x family for high-efficiency and earth-abundant PV. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Monolithic mode locked DBR laser with multiple-bandgap MQW structure realized by selective area growth

Energy Technology Data Exchange (ETDEWEB)

Schilling, M.; Bouayad-Amine, J.; Feeser, T.; Haisch, H.; Kuehn, E.; Lach, E.; Satzke, K.; Weber, J.; Zielinski, E. [Alcatel Telecom, Stuttgart (Germany). Research Div.

1996-12-31

The realization of novel monolithically integrated multiple-segment pulse laser sources in InGaAsP MQW technology is reported. The MQW layers for all functional sections of these devices, the modulator, the active (gain) and the passive waveguide, as well as the Bragg section were grown in a single selective area growth (SAG) step by LP-MOVPE on SiO{sub 2} patterned 2 inch InP substrates. Due to a properly selected pattern geometry 3 different bandgap regions with smooth interfaces are thereby formed along the laser cavity. The more than 4 mm long DBR lasers which exhibit a threshold current as low as 30 mA were mode locked by an intra-cavity electroabsorption modulator applying a sinusoidal voltage at around 10 GHz. In this way an optical pulse train with pulse widths < 13 ps (measured with a streak camera) and high extinction ratio was generated. A time-bandwidth product of 0.5 close to the Fourier limit is obtained. This device is very attractive for signal generation in 40 Gb/s OTDM transmission systems at 1.55 {micro}m wavelength.

Silicon fiber with p-n junction

International Nuclear Information System (INIS)

Homa, D.; Cito, A.; Pickrell, G.; Hill, C.; Scott, B.

2014-01-01

In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.

Erbium-doped fiber ring resonator for resonant fiber optical gyro applications

Science.gov (United States)

Li, Chunming; Zhao, Rui; Tang, Jun; Xia, Meijing; Guo, Huiting; Xie, Chengfeng; Wang, Lei; Liu, Jun

2018-04-01

This paper reports a fiber ring resonator with erbium-doped fiber (EDF) for resonant fiber optical gyro (RFOG). To analyze compensation mechanism of the EDF on resonator, a mathematical model of the erbium-doped fiber ring resonator (EDFRR) is established based on Jones matrix to be followed by the design and fabrication of a tunable EDFRR. The performances of the fabricated EDFRR were measured and the experimental Q-factor of 2 . 47 × 108 and resonant depth of 109% were acquired separately. Compared with the resonator without the EDF, the resonant depth and Q-factor of the proposed device are increased by 2.5 times and 14 times, respectively. A potential optimum shot noise limited resolution of 0 . 042∘ / h can be obtained for the RFOG, which is promising for low-cost and high precise detection.

Photonic lantern with multimode fibers embedded

Science.gov (United States)

Yu, Hai-Jiao; Yan, Qi; Huang, Zong-Jun; Tian, He; Jiang, Yu; Liu, Yong-Jun; Zhang, Jian-Zhong; Sun, Wei-Min

2014-08-01

A photonic lantern is studied which is formed by seven multimode fibers inserted into a pure silica capillary tube. The core of the tapered end has a uniform refractive index because the polymer claddings are removed before the fibers are inserted. Consequently, the light distribution is also uniform. Two theories describing a slowly varying waveguide and multimode coupling are used to analyze the photonic lantern. The transmission loss decreases as the length of the tapered part increases. For a device with a taper length of 3.4 cm, the loss is about 1.06 dB on average for light propagating through the taper from an inserted fiber to the tapered end and 0.99 dB in the reverse direction. For a device with a taper length of 0.7 cm, the two loss values are 2.63 dB and 2.53 dB, respectively. The results show that it is possible to achieve a uniform light distribution with the tapered end and a low-loss transmission in the device if parameters related to the lantern are reasonably defined.

Photonic lantern with multimode fibers embedded

International Nuclear Information System (INIS)

Yu Hai-Jiao; Yan Qi; Huang Zong-Jun; Tian He; Jiang Yu; Liu Yong-Jun; Zhang Jian-Zhong; Sun Wei-Min

2014-01-01

A photonic lantern is studied which is formed by seven multimode fibers inserted into a pure silica capillary tube. The core of the tapered end has a uniform refractive index because the polymer claddings are removed before the fibers are inserted. Consequently, the light distribution is also uniform. Two theories describing a slowly varying waveguide and multimode coupling are used to analyze the photonic lantern. The transmission loss decreases as the length of the tapered part increases. For a device with a taper length of 3.4 cm, the loss is about 1.06 dB on average for light propagating through the taper from an inserted fiber to the tapered end and 0.99 dB in the reverse direction. For a device with a taper length of 0.7 cm, the two loss values are 2.63 dB and 2.53 dB, respectively. The results show that it is possible to achieve a uniform light distribution with the tapered end and a low-loss transmission in the device if parameters related to the lantern are reasonably defined. (research papers)

New all-fiber velocimeter

International Nuclear Information System (INIS)

Weng Jidong; Tan Hua; Hu Shaolou; Ma Yun; Wan Xiang

2005-01-01

A new all-fiber velocity interferometer system for any reflector (AFVISAR) was developed. It was conceived and realized with the purpose of using it as the basic measuring element of a complete system for multiple point velocity measurements. Its main features are that it works at 532 nm and partly adopts the multimode optical fiber. The velocimeter consists of only fibers or fiber coupled components and has no optic elements such as optic lenses or reflectors. It is therefore very compact and easy to operate. Unlike the conventional AFVISAR, which uses single-mode optic fiber components, the laser beam in this new interferometer system arrives at and reflects from the target surface through a multimode optical fiber component, and then enters and interferes in a [3x3] single-mode fiber coupler. Its working principle is elaborated on in this article. Preliminary experiments using a split Hopkins pressure bar (SHPB) device show that the new interferometer can successfully measure the velocity profiles of the metal specimen along the axial or radial direction. Further experiments on a one-stage gas gun are under consideration

In- and Ga-based inorganic double perovskites with direct bandgaps for photovoltaic applications.

Science.gov (United States)

Dai, Jun; Ma, Liang; Ju, Minggang; Huang, Jinsong; Zeng, Xiao Cheng

2017-08-16

Double perovskites in the form of A 2 B'B''X 6 (A = Cs, B' = Ag, B'' = Bi) have been reported as potential alternatives to lead-containing organometal trihalide perovskites. However, all double perovskites synthesized to date exhibit indirect bandgaps >1.95 eV, which are undesirable for photovoltaic and optoelectronic applications. Herein, we report a comprehensive computer-aided screening of In- and Ga-based double perovskites for potential photovoltaic applications. To this end, several preconditions are implemented for the screening of optimal candidates, which include structural stability, electronic bandgaps, and optical absorption. Importantly, four In- and Ga-based double perovskites are identified to possess direct bandgaps within the desirable range of 0.9-1.6 eV for photovoltaic applications. Dominant optical absorption of the four double perovskites is found to be in the UV range. The structural and thermal stability of the four double perovskites are examined using both the empirical Goldschmidt ratio and convex-hull calculations. Only Cs 2 AgInBr 6 is predicted to be thermodynamically stable.

Automating Energy Bandgap Measurements in Semiconductors Using LabVIEW

Science.gov (United States)

Garg, Amit; Sharma, Reena; Dhingra, Vishal

2010-01-01

In this paper, we report the development of an automated system for energy bandgap and resistivity measurement of a semiconductor sample using Four-Probe method for use in the undergraduate laboratory of Physics and Electronics students. The automated data acquisition and analysis system has been developed using National Instruments USB-6008 DAQ…

Improving Device Efficiencies in Organic Photovoltaics through the Manipulation of Device Architectures and the Development of Low-Bandgap Materials

Science.gov (United States)

Rice, Andrew Hideo

Over the past two decades, vast amounts of research have been conducted in the pursuit of suitable organic semiconductors to replace inorganic materials in electronic applications due to their advantages of being lightweight, flexible, and solution-processible. However, before organic photovoltaics (OPVs) can be truly competitive and commercially viable, their efficiencies must be improved significantly. In this examination, we pursue higher efficiency OPVs in two different ways. Our attempts focus on 1) altering the microstructure of devices to improve charge dissociation, charge transport, and our understanding of how these devices function, and 2) tailoring materials to achieve optimal band gaps and energy levels for use in organic electronics. First, we demonstrate how the vertical morphology of bulk heterojunction (BHJ) solar cells, with an active layer consisting of self-assembled poly(3-hexylthiophene) (P3HT) nanowires and (6,6)-phenyl C61-butyric acid methyl ester (PCBM), can be beneficially influenced. Most device fabrication routes using similar materials employ an annealing step to influence active layer morphology, but this process can create an unfavorable phase migration where P3HT is driven toward the cathode. In contrast, we demonstrate devices that exhibit an increase in relative fullerene concentration at the top of the active layer by introducing the donor phase as a solid nanowire in the active layer solution and altering the pre-spin drying time. X-ray photoelectron spectroscopy (XPS) and conductive and photoconductive atomic force microscopy (cAFM and pcAFM) provide detailed information about how the surface of the active layer can be influenced; this is done by tracking the concentration and alignment of P3HT and PCBM domains. Using this new procedure, devices are made with power conversion efficiencies surpassing 2%. Additionally, we show that nanowires grown in the presence of the fullerene perform differently than those that are grown and

Band structure of germanium carbides for direct bandgap silicon photonics

Energy Technology Data Exchange (ETDEWEB)

Stephenson, C. A., E-mail: cstephe3@nd.edu; Stillwell, R. A.; Wistey, M. A. [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); O' Brien, W. A. [Rigetti Quantum Computing, 775 Heinz Avenue, Berkeley, California 94710 (United States); Penninger, M. W. [Honeywell UOP, Des Plaines, Illinois 60016 (United States); Schneider, W. F. [Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Gillett-Kunnath, M. [Department of Chemistry, Syracuse University, Syracuse, New York 13244 (United States); Zajicek, J. [Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Yu, K. M. [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

2016-08-07

Compact optical interconnects require efficient lasers and modulators compatible with silicon. Ab initio modeling of Ge{sub 1−x}C{sub x} (x = 0.78%) using density functional theory with HSE06 hybrid functionals predicts a splitting of the conduction band at Γ and a strongly direct bandgap, consistent with band anticrossing. Photoreflectance of Ge{sub 0.998}C{sub 0.002} shows a bandgap reduction supporting these results. Growth of Ge{sub 0.998}C{sub 0.002} using tetrakis(germyl)methane as the C source shows no signs of C-C bonds, C clusters, or extended defects, suggesting highly substitutional incorporation of C. Optical gain and modulation are predicted to rival III–V materials due to a larger electron population in the direct valley, reduced intervalley scattering, suppressed Auger recombination, and increased overlap integral for a stronger fundamental optical transition.

Monolithic, High-Speed Fiber-Optic Switching Array for Lidar, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The proposed optical device is a fiber-based multi-channel switch to quickly switch a fiber-coupled laser among many possible output channels to create a fiber-based...

Visible light photoreactivity from hybridization states between carbon nitride bandgap states and valence states in Nb and Ti oxides

Energy Technology Data Exchange (ETDEWEB)

Lee, Hosik, E-mail: hosiklee@gmail.com [School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology (UNIST), Unist-gil 100 Eonyang-eup, Ulsan 689-798 (Korea, Republic of); Ohno, Takahisa, E-mail: OHNO.Takahisa@nims.go.jp [Global Research Center for Environment and Energy based on Nanomaterials Science (GREEN), National Institute for Material Science, 1-2-1 Sengen, Tsukuba (Japan); Computational Materials Science Unit (CMSU), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047 (Japan)

2013-03-29

Highlights: ► Origin of bandgap reduction for visible photoreactivity is suggested. ► Carbon nitride adsorption in interlayer space can induce the bandgap reduction. ► The electronic structures are studied by density functional theory calculations. - Abstract: For better efficiency as photocatalysts, N-doping for visible light reactivity has been intensively studied in Lamellar niobic and titanic solid acids (HNb{sub 3}O{sub 8}, H{sub 2}Ti{sub 4}O{sub 9}), and its microscopic structures have been debated in this decade. We calculate the layered solid acids’ structures and bandgaps. Bandgap reduction by carbon nitride adsorption in interlayer space is observed computationally. It originates from localized nitrogen states which form delocalized top-valence states by hybridizing with the host oxygen states and can contribute to photo-current.

Fiber-optical microphones and accelerometers based on polymer optical fiber Bragg gratings

DEFF Research Database (Denmark)

Yuan, Scott Wu; Stefani, Alessio; Bang, Ole

2010-01-01

Polymer optical fibers (POFs) are ideal for applications as the sensing element in fiber-optical microphones and accelerometers based on fiber Bragg gratings (FBGs) due to their reduced Young’s Modulus of 3.2GPa, compared to 72GPa of Silica. To maximize the sensitivity and the dynamic range...... of the device the outer diameter and the length of the sensing fiber segment should be as small as possible. To this end we have fabricated 3mm FBGs in single-mode step-index POFs of diameter 115 micron, using 325nm UV writing and a phase-mask technique. 6mm POF sections with FBGs in the center have been glued...... to standard Silica SMF28 fibers. These POF FBGs have been characterized in terms of temperature and strain to find operating regimes with no hysteresis. Commercial fast wavelength interrogators (KHz) are shown to be able to track the thin POF FBGs and they are finally applied in a prototype accelerometer...

Linewidth of Cyclotron Absorption in Band-Gap Graphene: Relaxation Time Approximation vs. Monte Carlo Method

OpenAIRE

S.V. Kryuchkov; E.I. Kukhar’; D.V. Zav’yalov

2015-01-01

The power of the elliptically polarized electromagnetic radiation absorbed by band-gap graphene in presence of constant magnetic field is calculated. The linewidth of cyclotron absorption is shown to be non-zero even if the scattering is absent. The calculations are performed analytically with the Boltzmann kinetic equation and confirmed numerically with the Monte Carlo method. The dependence of the linewidth of the cyclotron absorption on temperature applicable for a band-gap graphene in the...

Studies of optical properties and applications of some mixed ternary semiconductors

International Nuclear Information System (INIS)

Ghosh, P.S.; Ghosh, D.K.; Samanta, L.K.

1989-01-01

Refractive indices of some mixed compound semiconductors below the bandgap are presented on the basis of some fundamental parameters and the effect of lattice mismatch on the refractive index step is also studied. The results help to design a variety of opto-electronic devices for the use in optical fiber communication and heterostructure lasers. The calculated values agree well with available experimental values thus justifying the approach. (author)

Optical fiber applied to radiation detection

Energy Technology Data Exchange (ETDEWEB)

Junior, Francisco A.B.; Costa, Antonella L.; Oliveira, Arno H. de; Vasconcelos, Danilo C., E-mail: fanbra@yahoo.com.br, E-mail: antonella@nuclear.ufmg.br, E-mail: heeren@nuclear.ufmg.br, E-mail: danilochagas@yahoo.com.br [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Escola de Engenharia. Departamento de Engenharia Nuclear

2015-07-01

In the last years, the production of optical fibers cables has make possible the development of a range of spectroscopic probes for in situ analysis performing beyond nondestructive tests, environmental monitoring, security investigation, application in radiotherapy for dose monitoring, verification and validation. In this work, a system using an optical fiber cable to light signal transmission from a NaI(Tl) radiation detector is presented. The innovative device takes advantage mainly of the optical fibers small signal attenuation and immunity to electromagnetic interference to application for radiation detection systems. The main aim was to simplify the detection system making it to reach areas where the conventional device cannot access due to its lack of mobility and external dimensions. Some tests with this innovative system are presented and the results stimulate the continuity of the researches. (author)

RETRACTED: Advances in colloidal quantum dot solar cells: The depleted-heterojunction device

KAUST Repository

Kramer, Illan J.; Pattantyus-Abraham, Andras G.; Barkhouse, Aaron R.; Wang, Xihua; Konstantatos, Gerasimos; Debnath, Ratan; Levina, Larissa; Raabe, Ines; Nazeeruddin, Md. K.; Grä tzel, Michael; Sargent, Edward H.

2011-01-01

Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processibility with quantum size-effect tunability to match absorption with the solar spectrum. Recent advances in CQD photovoltaics have led to 3.6% AM1.5 solar power conversion efficiencies. Here we report CQD photovoltaic devices on transparent conductive oxides and show that our devices rely on the establishment of a depletion region for field-driven charge transport and separation. The resultant depleted-heterojunction solar cells provide a 5.1% AM1.5 power conversion efficiency. The devices employ infrared-bandgap size-effect-tuned PbS colloidal quantum dots, enabling broadband harvesting of the solar spectrum. © 2010 Elsevier B.V.

RETRACTED: Advances in colloidal quantum dot solar cells: The depleted-heterojunction device

KAUST Repository

Kramer, Illan J.

2011-08-01

Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processibility with quantum size-effect tunability to match absorption with the solar spectrum. Recent advances in CQD photovoltaics have led to 3.6% AM1.5 solar power conversion efficiencies. Here we report CQD photovoltaic devices on transparent conductive oxides and show that our devices rely on the establishment of a depletion region for field-driven charge transport and separation. The resultant depleted-heterojunction solar cells provide a 5.1% AM1.5 power conversion efficiency. The devices employ infrared-bandgap size-effect-tuned PbS colloidal quantum dots, enabling broadband harvesting of the solar spectrum. © 2010 Elsevier B.V.

Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications

International Nuclear Information System (INIS)

Wellman, P; Syväjärvi, M; Ou, H

2014-01-01

silicon oxycarbide material can provide potential applications of the Eu luminescent materials to challenging conditions like high temperatures or aggressive environments where the silica has weaknesses. In some approaches, silicon rich silicon oxide that contain silicon nanoclusters emit red to near infrared luminescence due to quantum confinement effects while luminescence at shorter wavelength is difficult due to the interplay of defects and quantum confinement effects. In addition it is applicable as low-k dielectric, etch-stop and passivation layers. It also has an optical band-gap that is smaller than that of SiO2 which may facilitate carrier injection at lower voltages that is suitable for optoelectronics. From materials perspective of emerging materials, it seems distant to consider system related issues. The future demands on communication and lighting devices require higher information flows in modernized optical devices, for example by replacing electrical interconnects with their optical counterparts and tunable backgrounds filters for integrated optics or photonics applications. However, there are materials issues related to such device performance, for example by a non-linearity, that provide the possibility for selective removal or addition of wavelengths using hetero structures in which one side of the structure enhances the light-to-dark sensitivity of long and medium wavelength channels and diminish others, and an opposite behavior in other face of the structure. Certainly materials may be applied in various innovative ways to provide new performances in devices and systems. In any materials and device evaluation, reliability issues in passivation and packaging of semiconductor device structures provide a base knowledge that may be used to evaluate new concepts. Fundamental aspects of dielectric constant, bandgap and band offsets between the valence and conduction band edges between the passivation layer and the semiconductor create a foundation for

Field analysis of TE and TM modes in photonic crystal Bragg fibers by transmission matrix method

Directory of Open Access Journals (Sweden)

M Hosseini Farzad

2010-03-01

Full Text Available In this article, we considered the field analysis in photonic crystal Bragg fibers. We apply the method of transmission matrix to calculater the dispersion curves, the longitudinal wave number over wave number versus incident wavelength, and the field distributions of TE and TM modes in the Bragg fiber. Our analysis shows that the field of guided modes is confined in the core and can exist only in particular wavelength bands corresponding to the band-gap of the periodic structure of the clad. From another point of view, light confinement is due to Bragg reflection from high-and low-refractive index layers of the clad. Also, the diagram of average angular frequency with respect to average longitudinal wave number is plotted so that the band gap regions of the clad are clearly observed.

Fabrication and characterization of special microstructured fibers

Science.gov (United States)

Kobelke, J.; Schuster, K.; Schwuchow, A.; Litzkendorf, D.; Spittel, R.; Kirchhof, J.; Bartelt, H.

2011-05-01

Microstructured optical fibers (MOFs) as a novel type of light guiding media typically combine structural elements with very different chemical and optical behavior, e.g. silica - air, silica - high refractive index glasses. The applicative potential is very manifold: devices for telecommunication, nonlinear optics, sensing devices, fiber based gas lasers, etc. We report about preparation and characterization of selected total internal reflection (TIR) guiding MOFs: Air Clad Fiber, Suspended Core Fiber and heavy metal oxide (HMO) glass core MOFs. We fabricated Air Clad Fibers with extreme air fraction. The bridge width of about 0.13 μm corresponds to a numerical aperture (NA) of about 0.6. Suspended core fibers for evanescent sensing were prepared by pressurized drawing of arrangements of three and four capillaries. By inflating the cavities the NA was increased up to 0.68. Material combined MOFs were prepared for nonlinear application (e.g. supercontinuum generation) with lanthanum aluminum silicate glass core. Thermochemical and optical behaviors of high nonlinear core glass candidates were investigated for alumina concentration up to 20 mol% and lanthanum oxide concentration up to 24 mol% in silica matrix. The manufactured HMO glass core MOF with a La2O3 concentration of 10 mol% shows a similar background loss level like the unstructured HMO glass fiber about 1 dB/m.

Slab-coupled optical sensor fabrication using side-polished Panda fibers.

Science.gov (United States)

King, Rex; Seng, Frederick; Stan, Nikola; Cuzner, Kevin; Josephson, Chad; Selfridge, Richard; Schultz, Stephen

2016-11-01

A new device structure used for slab-coupled optical sensor (SCOS) technology was developed to fabricate electric field sensors. This new device structure replaces the D-fiber used in traditional SCOS technology with a side-polished Panda fiber. Unlike the D-fiber SCOS, the Panda fiber SCOS is made from commercially available materials and is simpler to fabricate. The Panda SCOS interfaces easier with lab equipment and exhibits ∼3  dB less loss at link points than the D-fiber SCOS. The optical system for the D-fiber is bandwidth limited by a transimpedance amplifier (TIA) used to amplify to the electric signal. The Panda SCOS exhibits less loss than the D-fiber and, as a result, does not require as high a gain setting on the TIA, which results in an overall higher bandwidth range. Results show that the Panda sensor also achieves comparable sensitivity results to the D-fiber SCOS. Although the Panda SCOS is not as sensitive as other side-polished fiber electric field sensors, it can be fabricated much easier because the fabrication process does not require special alignment techniques, and it is made from commercially available materials.

Electronic structure characterization and bandgap engineering of solar hydrogen materials

International Nuclear Information System (INIS)

Guo, Jinghua

2007-01-01

Bandgap, band edge positions as well as the overall band structure of semiconductors are of crucial importance in photoelectrochemical and photocatalytic applications. The energy position of the band edge level can be controlled by the electronegativity of the dopants, the pH of the solution (flatband potential variation of 60 mV per pH unit), as well as by quantum confinement effects. Accordingly, band edges and bandgap can be tailored to achieve specific electronic, optical or photocatalytic properties. Synchrotron radiation with photon energy at or below 1 keV is giving new insight into such areas as condensed matter physics and extreme ultraviolet optics technology. In the soft x-ray region, the question tends to be, what are the electrons doing as they migrated between the atoms. In this paper, I will present a number of soft x-ray spectroscopic study of nanostructured 3d metal compounds Fe 2 O 3 and ZnO

Intermediate Bandgap Solar Cells From Nanostructured Silicon

Energy Technology Data Exchange (ETDEWEB)

Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

2014-10-30

This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

Power Transmission by Optical Fibers for Component Inherent Communication

Directory of Open Access Journals (Sweden)

Michael Dumke

2010-02-01

Full Text Available The use of optical fibers for power transmission has been investigated intensely. An optically powered device combined with optical data transfer offers several advantages compared to systems using electrical connections. Optical transmission systems consist of a light source, a transmission medium and a light receiver. The overall system performance depends on the efficiency of opto-electronic converter devices, temperature and illumination dependent losses, attenuation of the transmission medium and coupling between transmitter and fiber. This paper will summarize the state of the art for optically powered systems and will discuss reasons for negative influences on efficiency. Furthermore, an outlook on power transmission by the use of a new technology for creating polymer optical fibers (POF via micro dispensing will be given. This technology is capable to decrease coupling losses by direct contacting of opto-electronic devices.

Radiation effects in optoelectronic devices

International Nuclear Information System (INIS)

Barnes, C.E.

1977-03-01

A summary is given of studies on radiation effects in light-emitting diodes, laser diodes, detectors, optical isolators and optical fibers. It is shown that the study of radiation damage in these devices can provide valuable information concerning the nature of the devices themselves, as well as methods of hardening these devices for applications in radiation environments

Study of lineal and non-lineal transmission of an optical fiber Sagnac interferometer as a bidirectional device

International Nuclear Information System (INIS)

Ramos-Beltran, J; Beltran-Perez, G; Castillo-Mixcoatl, J; Munoz-Aguirre, S; Zaca-Moran, P; Felipe, C

2011-01-01

The optical fiber Sagnac interferometer is a versatile system that has been investigated for a variety of applications such as optical switchers, filters, demultiplexers and passive mode-locked laser. In many cases, this arrangement is designed using a symmetrical coupler with two of their ports connected making a loop and generally the analysis have been focused in the transmission of the signal propagated in only one direction. Therefore in the present work a complementary study of the system considering the analysis for the lineal and non-lineal transmission as a bidirectional device has been performed. The experimental setup consists of different optical fiber lengths inside the cavity loop (between 100 and 500 m) with highly twisted singlemode fiber, a quarter wave retarder placed asymmetrically in one arm and a 50/50 coupler. The results have shown that for low optical powers, it is possible to adjust the system transmission in both propagation directions with the rotation of the retarder wave. On the other hand, in high optical power levels, this arrangement showed that the transmission increases slowly for the case when both the input and the output beams have the same polarization. This behavior can be used for pedestal suppression in a light pulse. Furthermore, for the case when the output signal polarization is orthogonal respect to the input one, the transmission changes quite fast. This effect can be used for applications such as the passive mode-locking.

Optical fibers and avalanche photodiodes for scintillator counters

International Nuclear Information System (INIS)

Borenstein, S.R.; Palmer, R.B.; Strand, R.C.

1980-01-01

Fine hodoscopes can be made of new scintillating optical fibers and one half inch end-on PMT's. An avalanche photodiode with small size and immunity to magnetic fields remains as a tempting new device to be proven as a photodetector for the fibers

Mg2BIV: Narrow Bandgap Thermoelectric Semiconductors

Science.gov (United States)

Kim, Il-Ho

2018-05-01

Thermoelectric materials can convert thermal energy directly into electric energy and vice versa. The electricity generation from waste heat via thermoelectric devices can be considered as a new energy source. For instance, automotive exhaust gas and all industrial processes generate an enormous amount of waste heat that can be converted to electricity by using thermoelectric devices. Magnesium compound Mg2BIV (BIV = Si, Ge or Sn) has a favorable combination of physical and chemical properties and can be a good base for the development of new efficient thermoelectrics. Because they possess similar properties to those of group BIV elemental semiconductors, they have been recognized as good candidates for thermoelectric applications. Mg2Si, Mg2Ge and Mg2Sn with an antifluorite structure are narrow bandgap semiconductors with indirect band gaps of 0.77 eV, 0.74 eV, and 0.35 eV, respectively. Mg2BIV has been recognized as a promising material for thermoelectric energy conversion at temperatures ranging from 500 K to 800 K. Compared to other thermoelectric materials operating in the similar temperature range, such as PbTe and filled skutterudites, the important aspects of Mg2BIV are non-toxic and earth-abundant elements. Based on classical thermoelectric theory, the material factor β ( m* / m e)3/2μκ L -1 can be utilized as the criterion for thermoelectric material selection, where m* is the density-of-states effective mass, me is the mass of an electron, μ is the carrier mobility, and κL is the lattice thermal conductivity. The β for magnesium silicides is 14, which is very high compared to 0.8 for iron silicides, 1.4 for manganese silicides, and 2.6 for silicon-germanium alloys. In this paper, basic phenomena of thermoelectricity and transport parameters for thermoelectric materials were briefly introduced, and thermoelectric properties of Mg2BIV synthesized by using a solid-state reaction were reviewed. In addition, various Mg2BIV compounds were discussed

Large bandgap blueshifts in the InGaP/InAlGaP laser structure using novel strain-induced quantum well intermixing

Energy Technology Data Exchange (ETDEWEB)

Al-Jabr, A. A.; Majid, M. A.; Alias, M. S.; Ng, T. K.; Ooi, B. S., E-mail: boon.ooi@kaust.edu.sa [Photonics Laboratory, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia (KSA) (Saudi Arabia); Anjum, D. H. [Advanced Nanofabrication, Imaging and Characterization Core Facilities, (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia (KSA) (Saudi Arabia)

2016-04-07

We report on a novel quantum well intermixing (QWI) technique that induces a large degree of bandgap blueshift in the InGaP/InAlGaP laser structure. In this technique, high external compressive strain induced by a thick layer of SiO{sub 2} cap with a thickness ≥1 μm was used to enhance QWI in the tensile-strained InGaP/InAlGaP quantum well layer. A bandgap blueshift as large as 200 meV was observed in samples capped with 1-μm SiO{sub 2} and annealed at 1000 °C for 120 s. To further enhance the degree of QWI, cycles of annealing steps were applied to the SiO{sub 2} cap. Using this method, wavelength tunability over the range of 640 nm to 565 nm (∼250 meV) was demonstrated. Light-emitting diodes emitting at red (628 nm), orange (602 nm), and yellow (585 nm) wavelengths were successfully fabricated on the intermixed samples. Our results show that this new QWI method technique may pave the way for the realization of high-efficiency orange and yellow light-emitting devices based on the InGaP/InAlGaP material system.

Optical Fiber/Nanowire Hybrid Structures for Efficient Three-Dimensional Dye-Sensitized Solar Cells

KAUST Repository

Weintraub, Benjamin

2009-11-09

Wired up: The energy conversion efficiency of three-dimensional dye-sensitized solar cells (DSSCs) in a hybrid structure that integrates optical fibers and nanowire arrays is greater than that of a two-dimensional device. Internal axial illumination enhances the energy conversion efficiency of a rectangular fiber-based hybrid structure (see picture) by a factor of up to six compared to light illumination normal to the fiber axis from outside the device.

Toward a compact fibered squeezing parametric source.

Science.gov (United States)

Brieussel, Alexandre; Ott, Konstantin; Joos, Maxime; Treps, Nicolas; Fabre, Claude

2018-03-15

In this work, we investigate three different compact fibered systems generating vacuum squeezing that involve optical cavities limited by the end surface of a fiber and by a curved mirror and containing a thin parametric crystal. These systems have the advantage to couple squeezed states directly to a fiber, allowing the user to benefit from the flexibility of fibers in the use of squeezing. Three types of fibers are investigated: standard single-mode fibers, photonic-crystal large-mode-area single-mode fibers, and short multimode fibers taped to a single-mode fiber. The observed squeezing is modest (-0.56  dB, -0.9  dB, -1  dB), but these experiments open the way for miniaturized squeezing devices that could be a very interesting advantage in scaling up quantum systems for quantum processing, opening new perspectives in the domain of integrated quantum optics.

Cladding modes of optical fibers: properties and applications

International Nuclear Information System (INIS)

Ivanov, Oleg V; Nikitov, Sergei A; Gulyaev, Yurii V

2006-01-01

One of the new methods of fiber optics uses cladding modes for controlling propagation of radiation in optical fibers. This paper reviews the results of studies on the propagation, excitation, and interaction of cladding modes in optical fibers. The resonance between core and cladding modes excited by means of fiber Bragg gratings, including tilted ones, is analyzed. Propagation of cladding modes in microstructured fibers is considered. The most frequently used method of exciting cladding modes is described, based on the application of long-period fiber gratings. Examples are presented of long-period gratings used as sensors and gain equalizers for fiber amplifiers, as well as devices for coupling light into and out of optical fibers. (instruments and methods of investigation)

High Per formance and Flexible Supercapacitors based on Carbonized Bamboo Fibers for Wide Temperature Applications

Science.gov (United States)

Zequine, Camila; Ranaweera, C. K.; Wang, Z.; Singh, Sweta; Tripathi, Prashant; Srivastava, O. N.; Gupta, Bipin Kumar; Ramasamy, K.; Kahol, P. K.; Dvornic, P. R.; Gupta, Ram K.

2016-08-01

High performance carbonized bamboo fibers were synthesized for a wide range of temperature dependent energy storage applications. The structural and electrochemical properties of the carbonized bamboo fibers were studied for flexible supercapacitor applications. The galvanostatic charge-discharge studies on carbonized fibers exhibited specific capacity of ~510F/g at 0.4 A/g with energy density of 54 Wh/kg. Interestingly, the carbonized bamboo fibers displayed excellent charge storage stability without any appreciable degradation in charge storage capacity over 5,000 charge-discharge cycles. The symmetrical supercapacitor device fabricated using these carbonized bamboo fibers exhibited an areal capacitance of ~1.55 F/cm2 at room temperature. In addition to high charge storage capacity and cyclic stability, the device showed excellent flexibility without any degradation to charge storage capacity on bending the electrode. The performance of the supercapacitor device exhibited ~65% improvement at 70 °C compare to that at 10 °C. Our studies suggest that carbonized bamboo fibers are promising candidates for stable, high performance and flexible supercapacitor devices.

Fiber optic gas sensor

Science.gov (United States)

Chen, Peng (Inventor); Buric, Michael P. (Inventor); Swinehart, Philip R. (Inventor); Maklad, Mokhtar S. (Inventor)

2010-01-01

A gas sensor includes an in-fiber resonant wavelength device provided in a fiber core at a first location. The fiber propagates a sensing light and a power light. A layer of a material is attached to the fiber at the first location. The material is able to absorb the gas at a temperature dependent gas absorption rate. The power light is used to heat the material and increases the gas absorption rate, thereby increasing sensor performance, especially at low temperatures. Further, a method is described of flash heating the gas sensor to absorb more of the gas, allowing the sensor to cool, thereby locking in the gas content of the sensor material, and taking the difference between the starting and ending resonant wavelengths as an indication of the concentration of the gas in the ambient atmosphere.

Ultrasonic bandgaps in 3D-printed periodic ceramic microlattices

Czech Academy of Sciences Publication Activity Database

Kruisová, Alena; Ševčík, Martin; Seiner, Hanuš; Sedlák, Petr; Román-Manso, B.; Miranzo, P.; Belmonte, M.; Landa, Michal

January (2018), s. 91-100 ISSN 0041-624X R&D Projects: GA ČR GA17-01618S Institutional support: RVO:61388998 Keywords : phononic crystals * ceramic s * additive manufacturing * bandgaps * wave propagation * finite elements method Subject RIV: BI - Acoustics OBOR OECD: Applied mechanics Impact factor: 2.327, year: 2016 http://dx.doi.org/10.1016/j.ultras.2017.07.017

Carbon based prosthetic devices

Energy Technology Data Exchange (ETDEWEB)

Devlin, D.J.; Carroll, D.W.; Barbero, R.S.; Archuleta, T. [Los Alamos National Lab., NM (US); Klawitter, J.J.; Ogilvie, W.; Strzepa, P. [Ascension Orthopedics (US); Cook, S.D. [Tulane Univ., New Orleans, LA (US). School of Medicine

1998-12-31

This is the final report of a one-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project objective was to evaluate the use of carbon/carbon-fiber-reinforced composites for use in endoprosthetic devices. The application of these materials for the metacarpophalangeal (MP) joints of the hand was investigated. Issues concerning mechanical properties, bone fixation, biocompatibility, and wear are discussed. A system consisting of fiber reinforced materials with a pyrolytic carbon matrix and diamond-like, carbon-coated wear surfaces was developed. Processes were developed for the chemical vapor infiltration (CVI) of pyrolytic carbon into porous fiber preforms with the ability to tailor the outer porosity of the device to provide a surface for bone in-growth. A method for coating diamond-like carbon (DLC) on the articulating surface by plasma-assisted chemical vapor deposition (CVD) was developed. Preliminary results on mechanical properties of the composite system are discussed and initial biocompatibility studies were performed.

WDM-Coherent OCDMA over one single device based on short chip Super Structured Fiber Bragg Gratings.

Science.gov (United States)

Amaya, Waldimar; Pastor, Daniel; Baños, Rocio; Garcia-Munoz, Victor

2011-11-21

We theoretically propose and demonstrate experimentally a Coherent Direct Sequence OCDMA en/decoder for multi-channel WDM operation based on a single device. It presents a broadband spectral envelope and a periodic spectral pattern that can be employed for en/decoding multiple sub-bands simultaneously. Multi-channel operation is verified experimentally by means of Multi-Band Super Structured Fiber Bragg Gratings with binary phase encoded chips fabricated with 1mm inter-chip separation that provides 4x100 GHz ITU sub-band separation at 1.25 Gbps. The WDM-OCDMA system verification was carried out employing simultaneous encoding of four adjacent sub-bands and two different OCDMA codes. © 2011 Optical Society of America

Spectroscopy of Rb atoms in hollow-core fibers

International Nuclear Information System (INIS)

Slepkov, Aaron D.; Bhagwat, Amar R.; Venkataraman, Vivek; Londero, Pablo; Gaeta, Alexander L.

2010-01-01

Recent demonstrations of light-matter interactions with atoms and molecules confined to hollow waveguides offer great promise for ultralow-light-level applications. The use of waveguides allows for tight optical confinement over interaction lengths much greater than what could be achieved in bulk geometries. However, the combination of strong atom-photon interactions and nonuniformity of guided light modes gives rise to spectroscopic features that must be understood in order to take full advantage of the properties of such systems. We use light-induced atomic desorption to generate an optically dense Rb vapor at room temperature inside a hollow-core photonic band-gap fiber. Saturable-absorption spectroscopy and passive slow-light experiments reveal large ac Stark shifts, power broadening, and transit-time broadening, that are present in this system even at nanowatt powers.

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

Energy Technology Data Exchange (ETDEWEB)

Seif, Johannes Peter, E-mail: johannes.seif@alumni.epfl.ch; Ballif, Christophe; De Wolf, Stefaan [Photovoltaics and Thin-Film Electronics Laboratory, Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2002 Neuchâtel (Switzerland); Menda, Deneb; Özdemir, Orhan [Department of Physics, Yıldız Technical University, Davutpasa Campus, TR-34210 Esenler, Istanbul (Turkey); Descoeudres, Antoine; Barraud, Loris [CSEM, PV-Center, Jaquet-Droz 1, CH-2002 Neuchâtel (Switzerland)

2016-08-07

Amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers—inserted between substrate and (front or rear) contacts—since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. As a consequence, device implementation of such films as window layers—without degraded carrier collection—demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.

Nanoscale probing of bandgap states on oxide particles using electron energy-loss spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Liu, Qianlang [School for the Engineering of Matter, Transport and Energy, Arizona State University, 85287 AZ (United States); March, Katia [Laboratoire de Physique des Solides, Bâtiment 510, Université Paris-Sud, 91405 Orsay Cedex (France); Crozier, Peter A., E-mail: CROZIER@asu.edu [School for the Engineering of Matter, Transport and Energy, Arizona State University, 85287 AZ (United States)

2017-07-15

Surface and near-surface electronic states were probed with nanometer spatial resolution in MgO and TiO{sub 2} anatase nanoparticles using ultra-high energy resolution electron energy-loss spectroscopy (EELS) coupled to a scanning transmission electron microscope (STEM). This combination allows the surface electronic structure determined with spectroscopy to be correlated with nanoparticle size, morphology, facet etc. By acquiring the spectra in aloof beam mode, radiation damage to the surface can be significantly reduced while maintaining the nanometer spatial resolution. MgO and TiO{sub 2} showed very different bandgap features associated with the surface/sub-surface layer of the nanoparticles. Spectral simulations based on dielectric theory and density of states models showed that a plateau feature found in the pre-bandgap region in the spectra from (100) surfaces of 60 nm MgO nanocubes is consistent with a thin hydroxide surface layer. The spectroscopy shows that this hydroxide species gives rise to a broad filled surface state at 1.1 eV above the MgO valence band. At the surfaces of TiO{sub 2} nanoparticles, pronounced peaks were observed in the bandgap region, which could not be well fitted to defect states. In this case, the high refractive index and large particle size may make Cherenkov or guided light modes the likely causes of the peaks. - Highlights: • Bandgap states detected with aloof beam monochromated EELS on oxide nanoparticle surfaces. • Dielectric theory applied to simulate the spectra and interpret surface structure. • Density of states models also be employed to understand the surface electronic structure. • In MgO, one states associate with water species was found close to the valence band edge. • In anatase, two mid-gap states associated with point defects were found.

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

Science.gov (United States)

Hsiao, F.-M.; Schnedler, M.; Portz, V.; Huang, Y.-C.; Huang, B.-C.; Shih, M.-C.; Chang, C.-W.; Tu, L.-W.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph.; Chiu, Y.-P.

2017-01-01

We demonstrate the potential of sub-bandgap laser-excited cross-sectional scanning tunneling microscopy and spectroscopy to investigate the presence of defect states in semiconductors. The characterization method is illustrated on GaN layers grown on Si(111) substrates without intentional buffer layers. According to high-resolution transmission electron microscopy and cathodoluminescence spectroscopy, the GaN layers consist of nanoscale wurtzite and zincblende crystallites with varying crystal orientations and hence contain high defect state densities. In order to discriminate between band-to-band excitation and defect state excitations, we use sub-bandgap laser excitation. We probe a clear increase in the tunnel current at positive sample voltages during sub-bandgap laser illumination for the GaN layer with high defect density, but no effect is found for high quality GaN epitaxial layers. This demonstrates the excitation of free charge carriers at defect states. Thus, sub-bandgap laser-excited scanning tunneling spectroscopy is a powerful complimentary characterization tool for defect states.

Recent progress in InAs/InP quantum dash nanostructures and devices

KAUST Repository

Ooi, Boon S.; Khan, Mohammed Zahed Mustafa; Ng, Tien Khee

2016-01-01

In this talk, we will give an outline and introduction to the broad inter-band emission devices focusing on the InAs/InP quantum dash material system, device physics and establishment of ultrabroad stimulated emission behavior. In addition, technologies for growing these nanostructures as well as engineer the bandgap of quantum dash based system using epitaxy growth techniques and postgrowth intermixing methods will be presented. At device level, we will focus our discussion on our recent progress in extending the ultra-broad lasing emission from quantum dash lasers, and achievements in broad gain semiconductor optical amplifiers (SOA), mode locked lasers, comb-lasers, wide band superluminsect diodes fabricated on this material system. © 2015 IEEE.

Recent progress in InAs/InP quantum dash nanostructures and devices

KAUST Repository

Ooi, Boon S.

2016-03-24

In this talk, we will give an outline and introduction to the broad inter-band emission devices focusing on the InAs/InP quantum dash material system, device physics and establishment of ultrabroad stimulated emission behavior. In addition, technologies for growing these nanostructures as well as engineer the bandgap of quantum dash based system using epitaxy growth techniques and postgrowth intermixing methods will be presented. At device level, we will focus our discussion on our recent progress in extending the ultra-broad lasing emission from quantum dash lasers, and achievements in broad gain semiconductor optical amplifiers (SOA), mode locked lasers, comb-lasers, wide band superluminsect diodes fabricated on this material system. © 2015 IEEE.

Progress in Group III nitride semiconductor electronic devices

International Nuclear Information System (INIS)

Hao Yue; Zhang Jinfeng; Shen Bo; Liu Xinyu

2012-01-01

Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China, which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures, and eventually achieve high performance GaN microwave power devices. Some remarkable progresses achieved in the program will be introduced, including those in GaN high electron mobility transistors (HEMTs) and metal—oxide—semiconductor high electron mobility transistors (MOSHEMTs) with novel high-k gate insulators, and material growth, defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication, and quantum transport and spintronic properties of GaN-based heterostructures, and high-electric-field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources. (invited papers)

Physical concepts of materials for novel optoelectronic device applications II: Device physics and applications; Proceedings of the Meeting, Aachen, Federal Republic of Germany, Oct. 28-Nov. 2, 1990

International Nuclear Information System (INIS)

Razeghi, M.

1991-01-01

The present conference on physical concepts for materials for novel optoelectronic device applications encompasses the device physics and applications including visible, IR, and far-IR sources, optoelectronic quantum devices, the physics and applications of high-Tc superconducting materials, photodetectors and modulators, and the electronic properties of heterostructures. Other issues addressed include semiconductor waveguides for optical switching, wide band-gap semiconductors, Si and Si-Ge alloys, transport phenomena in heterostructures and quantum wells, optoelectronic integrated circuits, nonlinear optical phenomena in bulk and multiple quantum wells, and optoelectronic technologies for microwave applications. Also examined are optical computing, current transport in charge-injection devices, thin films of YBaCuO for electronic applications, indirect stimulated emission at room temperature in the visible range, and a laser with active-element rectangular geometry

Device for the alternative option of temperature measurement

Science.gov (United States)

Jargus, Jan; Nedoma, Jan; Fajkus, Marcel; Novak, Martin; Cubik, Jakub; Cvejn, Daniel; Vasinek, Vladimir

2017-10-01

Polydimethylsiloxane (PDMS) has good optical properties, and its composition offers the possibility of use in many applications (industry, security device, medicine applications and etc.). We focused on the alternative option of temperature measurement in this article. Our approach is based on measuring changes of chromaticity correlated temperature corresponding to changes in temperature. Described device uses an optical fiber with a defined layer of PDMS and luminophore and we assume that it can find use also in the field of security. The article describes the process of making the prototype of the device and its verification based on laboratory results. The measured temperature depends mainly on the type of optical fiber and the measured temperature range is determined by the thermal resistance of used optical fiber. Using a calibration measurement can determine the value of temperature with an accuracy of +/- 2,5 %.

Fiber tests on a radiotelescope.

Science.gov (United States)

Connes, P.; Reynaud, F.

In order to demonstrate use of fibers in a future radio-dish-mounted interferometric array or optical telescopes, two 100-m SM fibers were installed on the Nançay radiotelescope, used in a serendipitous mode. They formed the two arms of a Mach-Zehnder interferometer, illuminated by a 6328 Å laser. Thermal and interferometric servo-control were simultaneously applied. Even under severe conditions, path difference was maintained stable to within a few Å.This is considerably better than needed for any ground-based application, and still more than adequate for a roughly-similar proposed space-borne device. Some more fiber problems remain to be solved.

High-power random distributed feedback fiber laser: From science to application

Energy Technology Data Exchange (ETDEWEB)

Du, Xueyuan [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Naval Academy of Armament, Beijing 100161 (China); Zhang, Hanwei; Xiao, Hu; Ma, Pengfei; Wang, Xiaolin; Zhou, Pu; Liu, Zejin [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

2016-10-15

A fiber laser based on random distributed feedback has attracted increasing attention in recent years, as it has become an important photonic device and has found wide applications in fiber communications or sensing. In this article, recent advances in high-power random distributed feedback fiber laser are reviewed, including the theoretical analyses, experimental approaches, discussion on the practical applications and outlook. It is found that a random distributed feedback fiber laser can not only act as an information photonics device, but also has the feasibility for high-efficiency/high-power generation, which makes it competitive with conventional high-power laser sources. In addition, high-power random distributed feedback fiber laser has been successfully applied for midinfrared lasing, frequency doubling to the visible and high-quality imaging. It is believed that the high-power random distributed feedback fiber laser could become a promising light source with simple and economic configurations. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Physical ageing in the above-bandgap photoexposured glassy arsenic selenides

Energy Technology Data Exchange (ETDEWEB)

Kozdras, A [Faculty of Physics of Opole University of Technology, 75, Ozimska str., Opole, PL-45370 (Poland); Golovchak, R [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-79031 (Ukraine); Shpotyuk, O [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-79031 (Ukraine)

2007-08-15

Physical ageing induced by above-bandgap light illumination is studied in glassy As-Se using differential scanning calorimetry. It is shown that measurable effect like to known short-term physical ageing is observed only in Se-rich glasses. The kinetics of this effect is compared with that caused by natural storage in a dark.

Physical ageing in the above-bandgap photoexposured glassy arsenic selenides

International Nuclear Information System (INIS)

Kozdras, A; Golovchak, R; Shpotyuk, O

2007-01-01

Physical ageing induced by above-bandgap light illumination is studied in glassy As-Se using differential scanning calorimetry. It is shown that measurable effect like to known short-term physical ageing is observed only in Se-rich glasses. The kinetics of this effect is compared with that caused by natural storage in a dark

Holmium hafnate: An emerging electronic device material

Science.gov (United States)

Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Scott, James F.; Katiyar, Ram S.

2015-03-01

We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ˜20 and very low dielectric loss of ˜0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

Copper-organic/octamolybdates: structures, bandgap sizes, and photocatalytic activities.

Science.gov (United States)

Luo, Lan; Lin, Haisheng; Li, Le; Smirnova, Tatyana I; Maggard, Paul A

2014-04-07

The structures, optical bandgap sizes, and photocatalytic activities are described for three copper-octamolybdate hybrid solids prepared using hydrothermal methods, [Cu(pda)]4[β-Mo8O26] (I; pda = pyridazine), [Cu(en)2]2[γ-Mo8O26] (II; en = ethylenediamine), and [Cu(o-phen)2]2[α-Mo8O26] (III; o-phen = o-phenanthroline). The structure of I consists of a [Cu(pda)]4(4+) tetramer that bridges to neighboring [β-Mo8O26](4-) octamolybdate clusters to form two-dimensional layers that stack along the a axis. The previously reported structures of II and III are constructed from [Cu2(en)4Mo8O26] and [Cu2(o-phen)4Mo8O26] clusters. The optical bandgap sizes were measured by UV-vis diffuse reflectance techniques to be ∼1.8 eV for I, ∼3.1 eV for II, and ∼3.0 eV for III. Electronic structure calculations show that the smaller bandgap size of I originates primarily from an electronic transition between the valence and conduction band edges comprised of filled 3d(10) orbitals on Cu(I) and empty 4d(0) orbitals on Mo(VI). Both II and III contain Cu(II) and exhibit larger bandgap sizes. Accordingly, aqueous suspensions of I exhibit visible-light photocatalytic activity for the production of oxygen at a rate of ∼90 μmol O2 g(-1) h(-1) (10 mg samples; radiant power density of ∼1 W/cm(2)) and a turnover frequency per calculated surface [Mo8O26](4-) cluster of ∼36 h(-1). Under combined ultraviolet and visible-light irradiation, I also exhibits photocatalytic activity for hydrogen production in 20% aqueous methanol of ∼316 μmol H2 g(-1) h(-1). By contrast, II decomposed during the photocatalysis measurements. The molecular [Cu2(o-phen)4(α-Mo8O26)] clusters of III dissolve into the aqueous methanol solution under ultraviolet irradiation and exhibit homogeneous photocatalytic rates for hydrogen production of up to ∼8670 μmol H2·g(-1) h(-1) and a turnover frequency of 17 h(-1). The clusters of III can be precipitated out by evaporation and redispersed into solution with

Hybrid Piezoelectric/Fiber-Optic Sensor Sheets

Science.gov (United States)

Lin, Mark; Qing, Xinlin

2004-01-01

Hybrid piezoelectric/fiber-optic (HyPFO) sensor sheets are undergoing development. They are intended for use in nondestructive evaluation and long-term monitoring of the integrity of diverse structures, including aerospace, aeronautical, automotive, and large stationary ones. It is anticipated that the further development and subsequent commercialization of the HyPFO sensor systems will lead to economic benefits in the form of increased safety, reduction of life-cycle costs through real-time structural monitoring, increased structural reliability, reduction of maintenance costs, and increased readiness for service. The concept of a HyPFO sensor sheet is a generalization of the concept of a SMART Layer(TradeMark), which is a patented device that comprises a thin dielectric film containing an embedded network of distributed piezoelectric actuator/sensors. Such a device can be mounted on the surface of a metallic structure or embedded inside a composite-material structure during fabrication of the structure. There is has been substantial interest in incorporating sensors other than piezoelectric ones into SMART Layer(TradeMark) networks: in particular, because of the popularity of the use of fiber-optic sensors for monitoring the "health" of structures in recent years, it was decided to incorporate fiber-optic sensors, giving rise to the concept of HyPFO devices.

A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells.

Science.gov (United States)

Guo, Fei; Li, Ning; Fecher, Frank W; Gasparini, Nicola; Ramirez Quiroz, Cesar Omar; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V; Radmilović, Velimir R; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

2015-07-16

The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

Lab-on-fiber technology

CERN Document Server

Cusano, Andrea; Crescitelli, Alessio; Ricciardi, Armando

2014-01-01

This book focuses on a research field that is rapidly emerging as one of the most promising ones for the global optics and photonics community: the "lab-on-fiber" technology. Inspired by the well-established 'lab on-a-chip' concept, this new technology essentially envisages novel and highly functionalized devices completely integrated into a single optical fiber for both communication and sensing applications.Based on the R&D experience of some of the world's leading authorities in the fields of optics, photonics, nanotechnology, and material science, this book provides a broad and accurate de

The performance of integrated active fiber composites in carbon fiber laminates

International Nuclear Information System (INIS)

Melnykowycz, M; Brunner, A J

2011-01-01

Piezoelectric elements integrated into fiber-reinforced polymer-matrix laminates can provide various functions in the resulting adaptive or smart composite. Active fiber composites (AFC) composed of lead zirconate titanate (PZT) fibers can be used as a component in a smart material system, and can be easily integrated into woven composites. However, the impact of integration on the device and its functionality has not been fully investigated. The current work focuses on the integration and performance of AFC integrated into carbon-fiber-reinforced plastic (CFRP) laminates, focusing on the strain sensor performance of the AFC–CFRP laminate under tensile loading conditions. AFC were integrated into cross-ply CFRP laminates using simple insertion and interlacing of the CFRP plies, with the AFC always placed in the 90° ply cutout area. Test specimens were strained to different strain levels and then cycled with a 0.01% strain amplitude, and the resulting signal from the AFC was monitored. Acoustic emission monitoring was performed during tensile testing to provide insight to the failure characteristics of the PZT fibers. The results were compared to those from past studies on AFC integration; the strain signal of AFC integrated into CFRP was much lower than that for AFC integrated into woven glass fiber laminates. However, the profiles of the degradations of the AFC signal resulting from the strain were nearly identical, showing that the PZT fibers fragmented in a similar manner for a given global strain. The sensor performance recovered upon unloading, which is attributed to the closure of cracks between PZT fiber fragments

Quantum state propagation in linear photonic bandgap structures

International Nuclear Information System (INIS)

Severini, S; Tricca, D; Sibilia, C; Bertolotti, M; Perina, Jan

2004-01-01

In this paper we investigate the propagation of a generic quantum state in a corrugated waveguide, which reproduces a photonic bandgap structure. We find the conditions that assure the outcoming state to preserve the quantum properties of the incoming state. Then, focusing on a particular quantum state (realized by two counter-propagating coherent states), we study the possibility of preserving the quantum properties of this particular double coherent state even in the presence of absorption phenomena during propagation in the structure

Direct growth of vanadium nitride nanosheets on carbon nanotube fibers as novel negative electrodes for high-energy-density wearable fiber-shaped asymmetric supercapacitors

Science.gov (United States)

Guo, Jiabin; Zhang, Qichong; Sun, Juan; Li, Chaowei; Zhao, Jingxin; Zhou, Zhenyu; He, Bing; Wang, Xiaona; Man, Ping; Li, Qiulong; Zhang, Jun; Xie, Liyan; Li, Mingxing; Yao, Yagang

2018-04-01

Significant efforts have been recently devoted to constructing high-performance fiber-shaped asymmetric supercapacitors. However, it is still a paramount challenge to develop high-energy-density fiber-shaped asymmetric supercapacitors for practical applications in portable and wearable electronics. This work reports a simple and efficient method to directly grow vanadium nitride nanosheets on carbon nanotube fibers as advanced negative electrodes with a high specific capacitance of 188 F/cm3 (564 mF/cm2). Taking advantage of their attractive structure, we successfully fabricated a fiber-shaped asymmetric supercapacitor device with a maximum operating voltage of 1.6 V by assembling the vanadium nitride/carbon nanotube fiber negative electrode with the Zinc-Nickel-Cobalt ternary oxides nanowire arrays positive electrode. Due to the excellent synergistic effects between positive and negative electrodes, a remarkable specific capacitance of 50 F/cm3 (150 mF/cm2) and an outstanding energy density of 17.78 mWh/cm3 (53.33 μWh/cm2) for our fiber-shaped asymmetric supercapacitor can be achieved. Furthermore, the as-assembled fiber-shaped asymmetric supercapacitor device has excellent mechanical flexibility in that 91% of the capacitance retained after bending 90° for 3000 times. Thus, this work exploits a pathway to construct high-energy-density fiber-shaped asymmetric supercapacitor for next-generation portable and wearable electronics.

Fiber inline Michelson interferometer fabricated by a femtosecond laser.

Science.gov (United States)

Yuan, Lei; Wei, Tao; Han, Qun; Wang, Hanzheng; Huang, Jie; Jiang, Lan; Xiao, Hai

2012-11-01

A fiber inline Michelson interferometer was fabricated by micromachining a step structure at the tip of a single-mode optical fiber using a femtosecond laser. The step structure splits the fiber core into two reflection paths and produces an interference signal. A fringe visibility of 18 dB was achieved. Temperature sensing up to 1000°C was demonstrated using the fabricated assembly-free device.

Modification of structure and optical band-gap of nc-Si:H films with ion irradiation

International Nuclear Information System (INIS)

Zhu Yabin; Wang Zhiguang; Sun Jianrong; Yao Cunfeng; Shen Tielong; Li Bingsheng; Wei Kongfang; Pang Lilong; Sheng Yanbin; Cui Minghuan; Li Yuanfei; Wang Ji; Zhu Huiping

2012-01-01

Hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated by using hot-wire chemical vapor deposition are irradiated at room temperature with 6.0 MeV Xe-ions. The irradiation fluences are 1.0 × 10 13 , 5.0 × 10 13 and 1.0 × 10 14 Xe-ions/cm 2 . The structure and optical band-gap of the irradiated films varying with ion fluence are investigated by means of X-ray diffraction, Raman and UV–Vis–NIR spectroscopes, as well as transmission electron microscopy. It is found that the crystallite size, the crystalline fraction and the optical band-gap decrease continuously with increasing the ion fluence. The crystalline fraction of the films irradiated to the fluences from 0 to 1.0 × 10 14 Xe-ions/cm 2 decreases from about 65.7% to 2.9% and the optical band-gap decreases from about 2.1 to 1.6 eV. Possible origins of the modification of the nc-Si:H films under 6.0 MeV Xe-ions irradiation are briefly discussed.

Multifunctional devices based on SnO2@rGO-coated fibers for human motion monitoring, ethanol detection, and photo response

Science.gov (United States)

Mi, Qing; Wang, Qi; Zang, Siyao; Chai, Zhaoer; Zhang, Jinnan; Ren, Xiaomin

2018-05-01

In this study, we developed a multifunctional device based on SnO2@rGO-coated fibers utilizing plasma treatment, dip coating, and microwave irradiation in sequence, and finally realized highly sensitive human motion monitoring, relatively good ethanol detection, and an obvious photo response. Moreover, the high level of comfort and compactness derived from highly elastic and comfortable fabrics contributes to the long-term availability and test accuracy. As an attempt at multifunctional integration of smart clothing, this work provides an attractive and relatively practical research direction.

Resorbable fiber-forming polymers for biotextile applications

CERN Document Server

Gajjar, Chirag R

2014-01-01

This book summarizes the properties and applications of conventional and commercially available fiber-forming, bioresorbable polymers, as well as those currently under study, for use as biotextiles. Factors affecting the performance of these biomaterials are presented, and precautionary measures to reduce premature, hydrolytic degradation during manufacturing and processing are discussed. Because of the structural requirements of medical devices and the technological advancements in synthetic fibers and textile technology, the new field of "Biotextiles" has evolved to exploit the potential of various woven, knitted, braided and non-woven textile structures for biomedical applications. Textile substrates provide certain unique mechanical properties to the medical device and because of an inherently high level of porosity, they can encourage cell growth and promote migration and proliferation. Bioresorbable devices that assist in the repair and regeneration of damaged tissues have in recent years replaced many ...

Hierarchical fiber-optic-based sensing system: impact damage monitoring of large-scale CFRP structures

International Nuclear Information System (INIS)

Minakuchi, Shu; Banshoya, Hidehiko; Takeda, Nobuo; Tsukamoto, Haruka

2011-01-01

This study proposes a novel fiber-optic-based hierarchical sensing concept for monitoring randomly induced damage in large-scale composite structures. In a hierarchical system, several kinds of specialized devices are hierarchically combined to form a sensing network. Specifically, numerous three-dimensionally structured sensor devices are distributed throughout the whole structural area and connected with an optical fiber network through transducing mechanisms. The distributed devices detect damage, and the fiber-optic network gathers the damage signals and transmits the information to a measuring instrument. This study began by discussing the basic concept of a hierarchical sensing system through comparison with existing fiber-optic-based systems, and an impact damage detection system was then proposed to validate the new concept. The sensor devices were developed based on comparative vacuum monitoring (CVM), and Brillouin-based distributed strain measurement was utilized to identify damaged areas. Verification tests were conducted step-by-step, beginning with a basic test using a single sensor unit, and, finally, the proposed monitoring system was successfully verified using a carbon fiber reinforced plastic (CFRP) fuselage demonstrator. It was clearly confirmed that the hierarchical system has better repairability, higher robustness, and a wider monitorable area compared to existing systems

Photonic bandgap structure of 3-D fcc silica nanospheres

Energy Technology Data Exchange (ETDEWEB)

Woo, Y. K.; Ha, N. Y.; Hwang, Ji Soo; Chang, H. J.; Wu, J. W. [Dept. of Physics, Ewha Womans University, Seoul (Korea, Republic of)

2002-07-01

Photonic crystal is an artificial optical material with a periodic dielectric potential, hence exhibiting a bandgap for a propagating electromagnetic wave. We fabricated crystal possessing 3-D fcc opal structure from silica nanospheres. The crystals are self-assembled on a flat glass by evaporating the solvent in the nanosphere suspension at the room temperature. The suspension consists of silica nanospheres with a diameter of 200 nm. The microscopic arrangement of nanospheres is identified by a scanning electron microscope, the resulting structure being fcc.Transmission spectrum of the fabricated photonic crystal in the visible and near-infrared regions is measured at different incident angles to find the distinct Bragg peaks, analysis of which further confirmed the fcc structure of the photonic crystal. From the optical microscopic image, we find that the opal domain varies from 30 μm to 125 μm in size. In order to relate the observed Bragg peaks with the microscopic arrangement of silica nanospheres, we introduced the scalar wave approximation, where the electric field in the medium is treated as a scalar rather than a vector quantity. It is found that the theoretical prediction of the position of bandgap is in a good agreement with the experimental measurement.

Photonic bandgap structure of 3-D fcc silica nanospheres

International Nuclear Information System (INIS)

Woo, Y. K.; Ha, N. Y.; Hwang, Ji Soo; Chang, H. J.; Wu, J. W.

2002-01-01

Photonic crystal is an artificial optical material with a periodic dielectric potential, hence exhibiting a bandgap for a propagating electromagnetic wave. We fabricated crystal possessing 3-D fcc opal structure from silica nanospheres. The crystals are self-assembled on a flat glass by evaporating the solvent in the nanosphere suspension at the room temperature. The suspension consists of silica nanospheres with a diameter of 200 nm. The microscopic arrangement of nanospheres is identified by a scanning electron microscope, the resulting structure being fcc.Transmission spectrum of the fabricated photonic crystal in the visible and near-infrared regions is measured at different incident angles to find the distinct Bragg peaks, analysis of which further confirmed the fcc structure of the photonic crystal. From the optical microscopic image, we find that the opal domain varies from 30 μm to 125 μm in size. In order to relate the observed Bragg peaks with the microscopic arrangement of silica nanospheres, we introduced the scalar wave approximation, where the electric field in the medium is treated as a scalar rather than a vector quantity. It is found that the theoretical prediction of the position of bandgap is in a good agreement with the experimental measurement.

Organic electronics on fibers for energy conversion applications

Science.gov (United States)

O'Connor, Brendan T.

Currently, there is great demand for pollution-free and renewable sources of electricity. Solar cells are particularly attractive from the standpoint of sunlight abundance. However, truly widespread adoption of solar cells is impeded by the high cost and poor scalability of existing technologies. For example, while 53,000 mi2 of 10% efficient solar cell modules would be required to supply the current U.S. energy demand, only about 50 mi2 have been installed worldwide. Organic semiconductors potentially offer a route to realizing low-cost solar cell modules, but currently suffer from low conversion efficiency. For organic-based solar cells to become commercially viable, further research is required to improve device performance, develop scalable manufacturing methods, and reduce installation costs via, for example, novel device form factors. This thesis makes several contributions to the field of organic solar cells, including the replacement of costly and brittle indium tin oxide (ITO) electrodes by inexpensive and malleable, thin metal films, and the application of external dielectric coatings to improve power conversion efficiency. Furthermore, we show that devices with non-planar geometries (e.g. organic solar cells deposited onto long fibers) can have higher efficiencies than conventional planar devices. Building on these results, we demonstrate novel fiber-based organic light emitting devices (OLEDs) that offer substantially improved color quality and manufacturability as a next-generation solid-state lighting technology. An intriguing possibility afforded by the fiber-based device architectures is the ability to integrate energy conversion and lighting functionalities with textiles, a mature, commodity-scale technology.

Nanoscale probing of bandgap states on oxide particles using electron energy-loss spectroscopy.

Science.gov (United States)

Liu, Qianlang; March, Katia; Crozier, Peter A

2017-07-01

Surface and near-surface electronic states were probed with nanometer spatial resolution in MgO and TiO 2 anatase nanoparticles using ultra-high energy resolution electron energy-loss spectroscopy (EELS) coupled to a scanning transmission electron microscope (STEM). This combination allows the surface electronic structure determined with spectroscopy to be correlated with nanoparticle size, morphology, facet etc. By acquiring the spectra in aloof beam mode, radiation damage to the surface can be significantly reduced while maintaining the nanometer spatial resolution. MgO and TiO 2 showed very different bandgap features associated with the surface/sub-surface layer of the nanoparticles. Spectral simulations based on dielectric theory and density of states models showed that a plateau feature found in the pre-bandgap region in the spectra from (100) surfaces of 60nm MgO nanocubes is consistent with a thin hydroxide surface layer. The spectroscopy shows that this hydroxide species gives rise to a broad filled surface state at 1.1eV above the MgO valence band. At the surfaces of TiO 2 nanoparticles, pronounced peaks were observed in the bandgap region, which could not be well fitted to defect states. In this case, the high refractive index and large particle size may make Cherenkov or guided light modes the likely causes of the peaks. Copyright © 2016 Elsevier B.V. All rights reserved.

Hybrid photonic-crystal fiber

DEFF Research Database (Denmark)

Markos, Christos; Travers, John C.; Abdolvand, Amir

2017-01-01

This article offers an extensive survey of results obtained using hybrid photonic-crystal fibers (PCFs) which constitute one of the most active research fields in contemporary fiber optics. The ability to integrate novel and functional materials in solid- and hollow-core PCFs through various...... is reviewed from scientific and technological perspectives, focusing on how different fluids, solids, and gases can significantly extend the functionality of PCFs. The first part of this review discusses the efforts to develop tunable linear and nonlinear fiber-optic devices using PCFs infiltrated...... with various liquids, glasses, semiconductors, and metals. The second part concentrates on recent and state-of-the-art advances in the field of gas-filled hollow-core PCFs. Extreme ultrafast gas-based nonlinear optics toward light generation in the extreme wavelength regions of vacuum ultraviolet, pulse...

Polymer microstructured fibers for guiding of THz radiation

DEFF Research Database (Denmark)

Nielsen, Kristian; Bang, Ole; Jepsen, Peter Uhd

2010-01-01

THz radiation, including low-loss transport of THz signals [1] between high-speed devices, integrated components for manipulation of THz light [2], such as power splitters, polarization management, and frequency filters, and confinement of the electric field of a THz signal in a small volume, enabling...... the facets of the fiber have allowed a direct visualization of the guided modes in the fiber [5]. We will discuss the optimal material choice for various kinds of polymer-based fibers, including solid-core and air-core photonic crystal fibers, and show examples of characterization of such components. We...

Tunable polarisation-maintaining filter based on liquid crystal photonic bandgap fibre

DEFF Research Database (Denmark)

Scolari, Lara; Olausson, Christina Bjarnal Thulin; Weirich, Johannes

2008-01-01

A tunable and polarisation-maintaining all-in-fibre filter based on a liquid crystal photonic bandgap fibre is demonstrated. Its polarisation extinction ratio reaches 14 dB at 1550 nm wavelength. Its spectral tunability range spans over 250 nm in the temperature range 30–70°C. The measured...

Towards seamlessly-integrated textile electronics: methods to coat fabrics and fibers with conducting polymers for electronic applications.

Science.gov (United States)

Allison, Linden; Hoxie, Steven; Andrew, Trisha L

2017-06-29

Traditional textile materials can be transformed into functional electronic components upon being dyed or coated with films of intrinsically conducting polymers, such as poly(aniline), poly(pyrrole) and poly(3,4-ethylenedioxythiophene). A variety of textile electronic devices are built from the conductive fibers and fabrics thus obtained, including: physiochemical sensors, thermoelectric fibers/fabrics, heated garments, artificial muscles and textile supercapacitors. In all these cases, electrical performance and device ruggedness is determined by the morphology of the conducting polymer active layer on the fiber or fabric substrate. Tremendous variation in active layer morphology can be observed with different coating or dyeing conditions. Here, we summarize various methods used to create fiber- and fabric-based devices and highlight the influence of the coating method on active layer morphology and device stability.

Fabry-Perot interferometer fiber tip sensor based on a glass microsphere glued at the etched end of multimode fiber

Science.gov (United States)

Chen, Weiping P.; Wang, Dongning N.; Xu, Ben; Wang, Zhaokun K.; Zhao, Chun-Liu

2017-05-01

We demonstrate an optical Fabry-Perot interferometer fiber tip sensor based on a glass microsphere glued at the etched end of a multimode fiber. The fiber device is miniature and robust, with a convenient reflection mode of operation, a high temperature sensitivity of 202.6 pm/°C within the range from 5°C to 90°C, a good refractive index sensitivity of ˜119 nm/RIU within the range from 1.331 to 1.38, and a gas pressure sensitivity of 0.19 dB/MPa.

Multimode fiber tip Fabry-Perot cavity for highly sensitive pressure measurement.

Science.gov (United States)

Chen, W P; Wang, D N; Xu, Ben; Zhao, C L; Chen, H F

2017-03-23

We demonstrate an optical Fabry-Perot interferometer fiber tip sensor based on an etched end of multimode fiber filled with ultraviolet adhesive. The fiber device is miniature (with diameter of less than 60 μm), robust and low cost, in a convenient reflection mode of operation, and has a very high gas pressure sensitivity of -40.94 nm/MPa, a large temperature sensitivity of 213 pm/°C within the range from 55 to 85 °C, and a relatively low temperature cross-sensitivity of 5.2 kPa/°C. This device has a high potential in monitoring environment of high pressure.

Flexible manufacturing for photonics device assembly

Science.gov (United States)

Lu, Shin-Yee; Pocha, Michael D.; Strand, Oliver T.; Young, K. David

1994-01-01

The assembly of photonics devices such as laser diodes, optical modulators, and opto-electronics multi-chip modules (OEMCM), usually requires the placement of micron size devices such as laser diodes, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (usually referred to as pigtailing). This is a very labor intensive process. Studies done by the opto-electronics (OE) industry have shown that 95 percent of the cost of a pigtailed photonic device is due to the use of manual alignment and bonding techniques, which is the current practice in industry. At Lawrence Livermore National Laboratory, we are working to reduce the cost of packaging OE devices through the use of automation. Our efforts are concentrated on several areas that are directly related to an automated process. This paper will focus on our progress in two of those areas, in particular, an automated fiber pigtailing machine and silicon micro-technology compatible with an automated process.

Metal adsorption process in activated carbon fiber from textile PAN fiber aim electrode production

International Nuclear Information System (INIS)

Rodrigues, Aline Castilho; Goncalves, Emerson Sarmento; Silva, Elen Leal da; Marcuzzo, Jossano Saldanha; Baldan, Mauricio Ribeiro; Cuna, Andres

2016-01-01

Full text: Carbon fibers have a variety of applications in industry and have been increasingly studied to explore their various characteristics. Studies show that the activated carbon fiber has been effective in removing small contaminants as well as activated carbon, because of its characteristic porosity. Other studies relate carbonaceous materials to the electrical conductivity devices application. This work is based on the use of an activated carbon fiber from textile polyacrylonitrile (PAN) for metallic ion adsorption from aqueous solution. Consequently, it improves the electrical characteristics and this fact show the possibility to use this material as electrode. The work was performed by adsorption process in saline solution (NO 3 Ag and ClPd) and activated carbon fiber in felt form as adsorbent. The metal adsorption on activated carbon fiber was characterized by textural analysis, x-ray diffraction (XRD), scanning electron microscopy equipped with energy dispersive x-ray (SEM-EDX), Raman spectroscopy and x-ray photoelectron spectroscopy (XPS). It was observed that activated carbon fiber showed good adsorption capacity for the metals used. At the end of the process, the activated carbon fiber samples gained about 15% by weight, related to metallic fraction incorporated into the fiber and the process of adsorption does not changed the structural, morphological and chemistry inertness of the samples. The results indicate the feasibility of this metal incorporation techniques activated carbon fiber for the production of electrodes facing the electrochemical area. (author)

Metal adsorption process in activated carbon fiber from textile PAN fiber aim electrode production

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, Aline Castilho; Goncalves, Emerson Sarmento, E-mail: alinerodrigues_1@msn.com [Instituto Tecnologico Aeroespacial (ITA), Sao Jose dos Campos, SP (Brazil); Silva, Elen Leal da; Marcuzzo, Jossano Saldanha; Baldan, Mauricio Ribeiro [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil); Cuna, Andres [Faculdade de Quimica, Universidad de la Republica (Uruguay)

2016-07-01

Full text: Carbon fibers have a variety of applications in industry and have been increasingly studied to explore their various characteristics. Studies show that the activated carbon fiber has been effective in removing small contaminants as well as activated carbon, because of its characteristic porosity. Other studies relate carbonaceous materials to the electrical conductivity devices application. This work is based on the use of an activated carbon fiber from textile polyacrylonitrile (PAN) for metallic ion adsorption from aqueous solution. Consequently, it improves the electrical characteristics and this fact show the possibility to use this material as electrode. The work was performed by adsorption process in saline solution (NO{sub 3}Ag and ClPd) and activated carbon fiber in felt form as adsorbent. The metal adsorption on activated carbon fiber was characterized by textural analysis, x-ray diffraction (XRD), scanning electron microscopy equipped with energy dispersive x-ray (SEM-EDX), Raman spectroscopy and x-ray photoelectron spectroscopy (XPS). It was observed that activated carbon fiber showed good adsorption capacity for the metals used. At the end of the process, the activated carbon fiber samples gained about 15% by weight, related to metallic fraction incorporated into the fiber and the process of adsorption does not changed the structural, morphological and chemistry inertness of the samples. The results indicate the feasibility of this metal incorporation techniques activated carbon fiber for the production of electrodes facing the electrochemical area. (author)

A model for the direct-to-indirect band-gap transition in monolayer ...

Indian Academy of Sciences (India)

Abstract. A monolayer of MoSe2 is found to be a direct band-gap semiconductor. We show, ... In order to determine appropriate basis for the tight-binding model, the Mo and Se ..... RD thanks the Council of Scientific and Industrial Research.

Holmium hafnate: An emerging electronic device material

International Nuclear Information System (INIS)

Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Katiyar, Ram S.; Scott, James F.

2015-01-01

We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho 2 Hf 2 O 7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ∼20 and very low dielectric loss of ∼0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap E g of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices

Holmium hafnate: An emerging electronic device material

Energy Technology Data Exchange (ETDEWEB)

Pavunny, Shojan P., E-mail: shojanpp@gmail.com, E-mail: rkatiyar@hpcf.upr.edu; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Katiyar, Ram S., E-mail: shojanpp@gmail.com, E-mail: rkatiyar@hpcf.upr.edu [Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377 (United States); Scott, James F. [Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377 (United States); Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 OHE (United Kingdom)

2015-03-16

We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho{sub 2}Hf{sub 2}O{sub 7} (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ∼20 and very low dielectric loss of ∼0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap E{sub g} of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

GW quasiparticle bandgaps of anatase TiO2 starting from DFT + U.

Science.gov (United States)

Patrick, Christopher E; Giustino, Feliciano

2012-05-23

We investigate the quasiparticle band structure of anatase TiO(2), a wide gap semiconductor widely employed in photovoltaics and photocatalysis. We obtain GW quasiparticle energies starting from density-functional theory (DFT) calculations including Hubbard U corrections. Using a simple iterative procedure we determine the value of the Hubbard parameter yielding a vanishing quasiparticle correction to the fundamental bandgap of anatase TiO(2). The bandgap (3.3 eV) calculated using this optimal Hubbard parameter is smaller than the value obtained by applying many-body perturbation theory to standard DFT eigenstates and eigenvalues (3.7 eV). We extend our analysis to the rutile polymorph of TiO(2) and reach similar conclusions. Our work highlights the role of the starting non-interacting Hamiltonian in the calculation of GW quasiparticle energies in TiO(2) and suggests an optimal Hubbard parameter for future calculations.

Spectroscopic studies on novel donor-acceptor and low band-gap polymeric semiconductors

International Nuclear Information System (INIS)

Cravino, A.

2002-11-01

Novel low band-gap conjugated polymeric semiconductors as well as conjugated electron donor chains carrying electron acceptor substituents were electrochemically prepared and investigated by means of different spectroscopic techniques. Using in situ FTIR and ESR spectroelectrochemistry, the spectroscopic features of injected positive charges are found to be different as opposed to the negative charge carriers on the same conjugated polymer. These results, for which the theoretical models so far developed do not account, demonstrate the different structure and delocalization of charge carriers with opposite signs. In addition, vibrational spectroscopy results proof the enhanced 'quinoid' character of low band-gap conjugated chains. Excited state spectroscopy was applied to study photoexcitations in conjugated polymers carrying tetracyanoanthraquinone type or fullerene moieties. This novel class of materials, hereafter called double-cable polymers, was found promising as alternative to the conjugated polymer:fullerene mixtures currently used for the preparation of 'bulk-heterojunction' polymeric solar cells. (author)

Sensitivity optimization of ZnO clad-modified optical fiber humidity sensor by means of tuning the optical fiber waist diameter

Science.gov (United States)

Azad, Saeed; Sadeghi, Ebrahim; Parvizi, Roghaieh; Mazaheri, Azardokht; Yousefi, M.

2017-05-01

In this work, the multimode optical fiber size effects on the performances of the clad-modified fiber with ZnO nanorods relative humidity (RH) sensor were experimentally investigated. Simple and controlled chemical etching method through on line monitoring was used to prepare different fiber waist diameter with long length of 15 mm. More precisely, the competition behavior of sensor performances with varying fiber waist diameter was studied to find appropriate size of maximizing evanescent fields. The obtained results revealed that evanescent wave absorption coefficient (γ) enhanced more than 10 times compare to bare fiber at the proposed optimum fiber diameter of 28 μm. Also, high linearity and fast recovery time about 7 s was obtained at the proposed fiber waist diameter. Applicable features of the proposed sensor allow this device to be used for humidity sensing applications, especially to be applied in remote sensing technologies.

Scalable Optical-Fiber Communication Networks

Science.gov (United States)

Chow, Edward T.; Peterson, John C.

1993-01-01

Scalable arbitrary fiber extension network (SAFEnet) is conceptual fiber-optic communication network passing digital signals among variety of computers and input/output devices at rates from 200 Mb/s to more than 100 Gb/s. Intended for use with very-high-speed computers and other data-processing and communication systems in which message-passing delays must be kept short. Inherent flexibility makes it possible to match performance of network to computers by optimizing configuration of interconnections. In addition, interconnections made redundant to provide tolerance to faults.

Engineering surface plasmon based fiber-optic sensors

International Nuclear Information System (INIS)

Dhawan, Anuj; Muth, John F.

2008-01-01

Ordered arrays of nanoholes with subwavelength diameters, and submicron array periodicity were fabricated on the tips of gold-coated optical fibers using focused ion beam (FIB) milling. This provided a convenient platform for evaluating extraordinary transmission of light through subwavelength apertures and allowed the implementation of nanostructures for surface plasmon engineered sensors. The fabrication procedure was straightforward and implemented on single mode and multimode optical fibers as well as etched and tapered fiber tips. Control of the periodicity and spacing of the nanoholes allowed the wavelength of operation to be tailored. Large changes in optical transmission were observed at the designed wavelengths, depending on the surrounding refractive index, allowing the devices to be used as fiber-optic sensors

Engineering surface plasmon based fiber-optic sensors

Energy Technology Data Exchange (ETDEWEB)

Dhawan, Anuj [Department of Electrical and Computer Engineering, NC State University, Raleigh, NC 27606 (United States); Muth, John F. [Department of Electrical and Computer Engineering, NC State University, Raleigh, NC 27606 (United States)], E-mail: muth@unity.ncsu.edu

2008-04-15

Ordered arrays of nanoholes with subwavelength diameters, and submicron array periodicity were fabricated on the tips of gold-coated optical fibers using focused ion beam (FIB) milling. This provided a convenient platform for evaluating extraordinary transmission of light through subwavelength apertures and allowed the implementation of nanostructures for surface plasmon engineered sensors. The fabrication procedure was straightforward and implemented on single mode and multimode optical fibers as well as etched and tapered fiber tips. Control of the periodicity and spacing of the nanoholes allowed the wavelength of operation to be tailored. Large changes in optical transmission were observed at the designed wavelengths, depending on the surrounding refractive index, allowing the devices to be used as fiber-optic sensors.

Optical bandgap of semiconductor nanostructures: Methods for experimental data analysis

Science.gov (United States)

Raciti, R.; Bahariqushchi, R.; Summonte, C.; Aydinli, A.; Terrasi, A.; Mirabella, S.

2017-06-01

Determination of the optical bandgap (Eg) in semiconductor nanostructures is a key issue in understanding the extent of quantum confinement effects (QCE) on electronic properties and it usually involves some analytical approximation in experimental data reduction and modeling of the light absorption processes. Here, we compare some of the analytical procedures frequently used to evaluate the optical bandgap from reflectance (R) and transmittance (T) spectra. Ge quantum wells and quantum dots embedded in SiO2 were produced by plasma enhanced chemical vapor deposition, and light absorption was characterized by UV-Vis/NIR spectrophotometry. R&T elaboration to extract the absorption spectra was conducted by two approximated methods (single or double pass approximation, single pass analysis, and double pass analysis, respectively) followed by Eg evaluation through linear fit of Tauc or Cody plots. Direct fitting of R&T spectra through a Tauc-Lorentz oscillator model is used as comparison. Methods and data are discussed also in terms of the light absorption process in the presence of QCE. The reported data show that, despite the approximation, the DPA approach joined with Tauc plot gives reliable results, with clear advantages in terms of computational efforts and understanding of QCE.

Adaptive fiber optics collimator based on flexible hinges.

Science.gov (United States)

Zhi, Dong; Ma, Yanxing; Ma, Pengfei; Si, Lei; Wang, Xiaolin; Zhou, Pu

2014-08-20

In this manuscript, we present a new design for an adaptive fiber optics collimator (AFOC) based on flexible hinges by using piezoelectric stacks actuators for X-Y displacement. Different from traditional AFOC, the new structure is based on flexible hinges to drive the fiber end cap instead of naked fiber. We fabricated a real AFOC based on flexible hinges, and the end cap's deviation and resonance frequency of the device were measured. Experimental results show that this new AFOC can provide fast control of tip-tilt deviation of the laser beam emitting from the end cap. As a result, the fiber end cap can support much higher power than naked fiber, which makes the new structure ideal for tip-tilt controlling in a high-power fiber laser system.

Electromagnetically induced photonic bandgap in hot Cs atoms

International Nuclear Information System (INIS)

Li, D. W.; Zhang, L.; Su, X. M.; Zhuo, Z. C.; Kim, J. B

2010-01-01

Three-level Λ-type thermal Cs atoms are used to demonstrate the phenomenon of a photonic bandgap induced by quantum coherence with a standing wave (SW). We observed the transmitted signals of probe field driven by several kinds of SW, which are formed by a strong forward-traveling field and a backward-traveling field when a mirror reflects the forward-traveling beam. Considering Doppler inhomogeneous broadenings with a SW drive, we employ Fourier transformation to solve density-matrix equations for simulation results. The simulation results are found to be consistent with the experimental results.

Gas refractometry based on an all-fiber spatial optical filter.

Science.gov (United States)

Silva, Susana; Coelho, L; André, R M; Frazão, O

2012-08-15

A spatial optical filter based on splice misalignment between optical fibers with different diameters is proposed for gas refractometry. The sensing head is formed by a 2 mm long optical fiber with 50 μm diameter that is spliced with a strong misalignment between two single-mode fibers (SMF28) and interrogated in transmission. The misalignment causes a Fabry-Perot behavior along the reduced-size fiber and depending on the lead-out SMF28 position, it is possible to obtain different spectral responses, namely, bandpass or band-rejection filters. It is shown that the spatial filter device is highly sensitive to refractive index changes on a nitrogen environment by means of the gas pressure variation. A maximum sensitivity of -1390 nm/RIU for the bandpass filter was achieved. Both devices have shown similar temperature responses with an average sensitivity of 25.7 pm/°C.

Optical fiber head for providing lateral viewing

Science.gov (United States)

Everett, Matthew J.; Colston, Billy W.; James, Dale L.; Brown, Steve; Da Silva, Luiz

2002-01-01

The head of an optical fiber comprising the sensing probe of an optical heterodyne sensing device includes a planar surface that intersects the perpendicular to axial centerline of the fiber at a polishing angle .theta.. The planar surface is coated with a reflective material so that light traveling axially through the fiber is reflected transverse to the fiber's axial centerline, and is emitted laterally through the side of the fiber. Alternatively, the planar surface can be left uncoated. The polishing angle .theta. must be no greater than 39.degree. or must be at least 51.degree.. The emitted light is reflected from adjacent biological tissue, collected by the head, and then processed to provide real-time images of the tissue. The method for forming the planar surface includes shearing the end of the optical fiber and applying the reflective material before removing the buffer that circumscribes the cladding and the core.

Systematic Bandgap Engineering of Graphene Quantum Dots and Applications for Photocatalytic Water Splitting and CO2 Reduction.

Science.gov (United States)

Yan, Yibo; Chen, Jie; Li, Nan; Tian, Jingqi; Li, Kaixin; Jiang, Jizhou; Liu, Jiyang; Tian, Qinghua; Chen, Peng

2018-04-24

Graphene quantum dots (GQDs), which is the latest addition to the nanocarbon material family, promise a wide spectrum of applications. Herein, we demonstrate two different functionalization strategies to systematically tailor the bandgap structures of GQDs whereby making them snugly suitable for particular applications. Furthermore, the functionalized GQDs with a narrow bandgap and intramolecular Z-scheme structure are employed as the efficient photocatalysts for water splitting and carbon dioxide reduction under visible light. The underlying mechanisms of our observations are studied and discussed.

Thermal transport during the growth of crystalline fibers by the laser-heated float zone method

International Nuclear Information System (INIS)

Feigelson, R.S.

1990-01-01

Single crystal fibers may someday prove useful in a variety of advanced device applications. At the current time, fibers for optical, superconducting, and structural applications are under investigation. The advantage of single crystal fibers for optical devices lies in the enhanced light guiding properties one can obtain compared to a bulk crystal of the same material. Potential fiber-optic applications include optical transmission lines for remote temperature sensing and spectroscopy, solid-state lasers and amplifiers, and nonlinear devices such as harmonic generators, Raman shifters and optical parameters oscillators. In the area of superconductivity, the potential for producing long flexible fibers of the Bi 2 Sr 2 CaCu 2 O 8 high temperature superconductor which are capable of carrying high electrical current has been demonstrated. This superconductor, like other high T c materials is incongruently melting and growth rates (fiber throughput), therefore, have to be reduced to optimize the superconducting properties. Interest in single crystal fibers for structural applications stems from a strong technological interest in high strength, light weight fiber-matrix composites capable of operating at elevated temperatures. The very high crystalline perfection possible in single crystal fibers of certain materials, for example Al 2 O 3 , make them very attractive for special high temperature structural applications. Single crystal fibers are noted for having greater lower defects and hence higher strength than comparable bulk crystals. For most of the fiber applications mentioned above, stringent requirements exist for uniform diameter, homogeneous composition, and a low density of crystalline defects. Excellent growth stability is needed to obtain such fibers

Cross talk analysis in multicore optical fibers by supermode theory.

Science.gov (United States)

Szostkiewicz, Lukasz; Napierala, Marek; Ziolowicz, Anna; Pytel, Anna; Tenderenda, Tadeusz; Nasilowski, Tomasz

2016-08-15

We discuss the theoretical aspects of core-to-core power transfer in multicore fibers relying on supermode theory. Based on a dual core fiber model, we investigate the consequences of this approach, such as the influence of initial excitation conditions on cross talk. Supermode interpretation of power coupling proves to be intuitive and thus may lead to new concepts of multicore fiber-based devices. As a conclusion, we propose a definition of a uniform cross talk parameter that describes multicore fiber design.

Black phosphorus: broadband nonlinear optical absorption and application

Science.gov (United States)

Li, Ying; He, Yanliang; Cai, Yao; Chen, Shuqing; Liu, Jun; Chen, Yu; Yuanjiang, Xiang

2018-02-01

Black phosphorus (BP), 2D layered material with layered dependent direct bandgap (0.3 eV (bulk), 2.0 eV (single layer)) that has gained renewed attention, has been demonstrated as an extremely appropriate optical material for broadband optical applications from infrared to mid-infrared wavebands. Herein, by coupling multi-layer BP films with microfiber, we fabricated a nonlinear optical device with long light-matter interaction distance and enhanced damage threshold. Through taking full advantage of its fine nonlinear optical absorption property, we obtained stable mode-locking (51 ps) and Q-switched mode-locking states in Yb-doped or Er-doped (403.7 fs) all-fiber lasers and the single-longitudinal-mode operation (53 kHz) in an Er-doped fiber laser with enhanced power tolerance, using the same nonlinear optical device. Our results showed that BP could be a favorable nonlinear optical material for developing BP-enabled wave-guiding photonic devices, and revealed new insight into BP for high optical power unexplored optical devices.

The Tunable Bandgap of AB-Stacked Bilayer Graphene on SiO2 with H2O Molecule Adsorption

International Nuclear Information System (INIS)

Wang Tao; Guo Qing; Liu Yan; Wang Wen-Bo; Sheng Kuang; Ao Zhi-Min; Yu Bin

2011-01-01

The atomic and electronic structures of AB-stacking bilayer graphene (BLG) in the presence of H 2 O molecules are investigated by density functional theory calculations. For free-standing BLG, the bandgap is opened to 0.101 eV with a single H 2 O molecule adsorbed on its surface. The perfectly suspended BLG is sensitive to H 2 O adsorbates, which break the BLG lattice symmetry and open an energy gap. While a single H 2 O molecule is adsorbed on the BLG surface with a SiO 2 substrate, the bandgap widens to 0.363 eV. Both the H 2 O molecule adsorption and the oxide substrate contribute to the BLG bandgap opening. The phenomenon is interpreted with the charge transfer process in 2D carbon nanostructures. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

From space qualified fiber optic gyroscope to generic fiber optic solutions available for space application

Science.gov (United States)

Buret, Thomas; Ramecourt, David; Napolitano, Fabien

2017-11-01

The aim of this article is to present how the qualification of the Fiber Optic Gyroscope technology from IXSEA has been achieved through the qualification of a large range of optical devices and related manufacturing processes. These qualified optical devices and processes, that are now fully mastered by IXSEA through vertical integration of the technology, can be used for other space optical sensors. The example of the SWARM project will be discussed.

Effect of ripple taper on band-gap overlap in a coaxial Bragg structure operating at terahertz frequency

International Nuclear Information System (INIS)

Ding Xueyong; Li Hongfan; Lv Zhensu

2012-01-01

Based on the mode-coupling method, numerical analysis is presented to demonstrate the influence of ripple taper on band-gap overlap in a coaxial Bragg structure operating at terahertz frequency. Results show that the interval between the band-gaps of the competing mode and the desired working mode is narrowed by use of positive-taper ripples, but is expanded if negative-taper ripples are employed, and the influence of the negative-taper ripples is obviously more advantageous than the positive-taper ripples; the band-gap overlap of modes can be efficiently separated by use of negative-taper ripples. The residual side-lobes of the frequency response in a coaxial Bragg structure with ripple taper also can be effectively suppressed by employing the windowing-function technique. These peculiarities provide potential advantage in constructing a coaxial Bragg cavity with high quality factor for single higher-order-mode operation of a high-power free-electron maser in the terahertz frequency range.

SU-F-T-515: Increased Skin Dose in Supine Craniospinal Irradiation Due to Carbon Fiber Couch and Vacuum Bag Immobilization Device

Energy Technology Data Exchange (ETDEWEB)

Robertson, D; Zhao, Z; Wang, X; Yang, J [UT MD Anderson Cancer Center, Houston, TX (United States)

2016-06-15

Purpose: To measure the surface dose for supine craniospinal irradiation employing posterior beams, treating through an imaging couch and BlueBag immobilization device. Methods: The percentage depth dose (PDD) in the buildup region of a clinical 6 MV photon beam was measured using an Advanced Markus parallel plate ionization chamber in a solid water phantom. The PDD from a 10×10 cm{sup 2} anterior beam was measured at 100 cm SSD, simulating a traditional prone craniospinal technique. The measurements were compared to commissioning and treatment planning system data. The PDD was also measured in a posterior setup with the phantom surface laying directly on the Brainlab carbon fiber imaging couch, with the phantom surface 100 cm from the source, simulating a supine craniospinal setup. The posterior measurements were repeated with a BlueBag vacuum immobilization device between the couch and phantom, with thicknesses of 1.7 cm and 5 cm. The PDD from a 10×10 cm{sup 2} field and a typical 6×30 cm{sup 2} craniospinal field were also compared. The PDDs were normalized at 5 cm to reflect typical craniospinal prescription dose normalization. Results: The measured PDD curve from the anterior setup agreed well with commissioning and treatment planning data, with surface doses of 19.9%, 28.8% and 27.7%, respectively. The surface doses of the 10×10 cm{sup 2} and 6×30 cm{sup 2} fields delivered through the imaging couch were both 122.4%. The supine setup yielded surface doses of 122.4%, 121.6%, and 119.6% for the couch only, 1.7 cm bag, and 5 cm bag setups, respectively. Conclusion: Delivering craniospinal irradiation through a carbon fiber couch removes the majority of skin sparing. The addition of a vacuum bag immobilization device restores some skin sparing, but the magnitude of this effect is negligible.

Wavelength-independent all-fiber mode converters.

Science.gov (United States)

Lai, K; Leon-Saval, S G; Witkowska, A; Wadsworth, W J; Birks, T A

2007-02-15

We have used two different photonic crystal fiber (PCF) techniques to make all-fiber mode converters. An LP(01) to LP(11) mode converter was made by the ferrule technique on a drawing tower, and an LP(01) to LP(02) mode converter was made by controlled hole inflation of an existing PCF on a tapering rig. Both devices rely on adiabatic propagation rather than resonant coupling; so high extinction was achieved across a wide wavelength range.

Optical devices in adverse environments; Proceedings of the Meeting, Cannes, France, Nov. 19, 20, 1987

International Nuclear Information System (INIS)

Greenwell, R.A.

1988-01-01

Recent advances in the design of fiber-optic devices, test equipment, optical sensors, and lasers for operation in hostile environments are discussed in reviews and reports. Topics examined include radiation effects on optical fibers, the effect of H2 treatment and water content on the recovery of undoped core fibers after pulsed and continuous irradiation, the NATO test program for optical fibers and components, alpha-irradiation damage to borosilicate glasses, high-reliability optical components for undersea light-wave systems, the behavior of Si optoelectronic components under gamma irradiation, optical devices and sensors of special-purpose fibers, and a fiber-optic microprobe for interferometric measurements in generators

Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

Science.gov (United States)

Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

2015-11-13

The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

Direct-Indirect Nature of the Bandgap in Lead-Free Perovskite Nanocrystals

KAUST Repository

Zhang, Yuhai

2017-06-23

With record efficiencies achieved in lead halide perovskite-based photovoltaics, urgency has shifted toward finding alternative materials that are stable and less toxic. Bismuth-based perovskite materials are currently one of the most promising candidates among those alternatives. However, the band structures of these materials, including the nature of the bandgaps, remain elusive due to extremely low photoluminescence quantum yield (PLQY) and scattering issues in their thin-film form. Here, we reveal the specific nature of the material\\'s electronic transitions by realizing monodisperse colloidal nanocrystals (NCs) of hexagonal-phase Cs3Bi2X9 perovskites, which afford well-resolved PL features. Interestingly, the PL profile exhibits a dual-spectral feature at room temperature with comparable intensities, based on which we propose an exciton recombination process involving both indirect and direct transitions simultaneously-an observation further supported by temperature-dependent and density functional theory (DFT) calculations. Our findings provide experimental and theoretical insights into the nature of the bandgaps in bismuth halide materials-essential information for assessing their viability in solar cells and optoelectronics.

Optical device comprising a cantilever and method of fabrication and use thereof

NARCIS (Netherlands)

Iannuzzi, Davide; Deladi, S.; Elwenspoek, Michael Curt

2008-01-01

The present invention provides an optical device, comprising an optical fiber and a cantilever that is arranged on an end of the optical fiber; The cantilever may be an integral part of the optical fiber, and may have a length that is substantially equal to a diameter of the optical fiber.

Optical device comprising a cantilever and method of fabrication and use thereof

NARCIS (Netherlands)

Iannuzzi, Davide; Deladi, S.; Elwenspoek, Michael Curt

2011-01-01

The present invention provides an optical device, comprising an optical fiber and a cantilever that is arranged on an end of the optical fiber; The cantilever may be an integral part of the optical fiber, and may have a length that is substantially equal to a diameter of the optical fiber.