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Sample records for bandgap fiber devices

  1. Liquid Crystal Photonic bandgap Fibers: Modeling and Devices

    DEFF Research Database (Denmark)

    Weirich, Johannes

    In this PhD thesis an experimental and numerical investigation of liquid crystal infiltrated photonic bandgap fibers (LCPBGs) is presented. A simulation scheme for modeling LCPBG devices including electrical tunability is presented. New experimental techniques, boundary coating and the applications...... of monomer added LCs, are investigated. Waveplates based on LCPBGs and a tunable polarization maintaining filter are developed. An on-chip tunable notch filter based on long period gratings is presented. Furthermore, the application of a LCPBG device for the electrical control of a fiber laser is...

  2. Tunable photonic bandgap fiber based devices for optical networks

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard; Scolari, Lara; Rottwitt, Karsten;

    2005-01-01

    In future all optical networks one of the enabling technologies is tunable elements including reconfigurable routers, switches etc. Thus, the development of a technology platform that allows construction of tuning components is critical. Lately, microstructured optical fibers, filled with liquid...... crystals, have proven to be a candidate for such a platform. Microstructured optical fibers offer unique wave-guiding properties that are strongly related to the design of the air holes in the cladding of the fiber. These wave-guiding properties may be altered by filling the air holes with a material, for...... example a liquid crystal that changes optical properties when subjected to, for example, an optical or an electrical field. The utilization of these two basic properties allows design of tunable optical devices for optical networks. In this work, we focus on applications of such devices and discuss recent...

  3. Compact optically-fed microwave true-time delay using liquid crystal photonic bandgap fiber device

    DEFF Research Database (Denmark)

    Wei, Lei; Xue, Weiqi; Chen, Yaohui;

    2009-01-01

    Electrically tunable liquid crystal photonic bandgap fiber device based optically-fed microwave true-time delay is demonstrated. A maximum ~60° phase shift and an averaged ~7.2ps true time delay are obtained over the modulation frequency range 1GHz-19GHz.......Electrically tunable liquid crystal photonic bandgap fiber device based optically-fed microwave true-time delay is demonstrated. A maximum ~60° phase shift and an averaged ~7.2ps true time delay are obtained over the modulation frequency range 1GHz-19GHz....

  4. Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Barkou, Stig Eigil; Broeng, Jes; Bjarklev, Anders Overgaard

    1999-01-01

    Photonic bandgap fibers are describes using a new Kagomé cladding structure. These fibers may potentially guide light in low-index regions. Such fibers offer new dispersion properties, and large design flexibility.......Photonic bandgap fibers are describes using a new Kagomé cladding structure. These fibers may potentially guide light in low-index regions. Such fibers offer new dispersion properties, and large design flexibility....

  5. Gaussian Filtering with Tapered Liquid Crystal Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Scolari, Lara; Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard

    2006-01-01

    We present a device based on a tapered Liquid Crystal Photonic Bandgap Fiber that allows active all-in-fiber filtering. The resulting Photonic Bandgap Fiber device provides a Gaussian filter covering the wavelength range 1200-1600 nm......We present a device based on a tapered Liquid Crystal Photonic Bandgap Fiber that allows active all-in-fiber filtering. The resulting Photonic Bandgap Fiber device provides a Gaussian filter covering the wavelength range 1200-1600 nm...

  6. Continuously tunable devices based on electrical control of dual-frequency liquid crystal filled photonic bandgap fibers

    DEFF Research Database (Denmark)

    Scolari, Lara; Alkeskjold, Thomas Tanggaard; Riishede, Jesper;

    2005-01-01

    We present an electrically controlled photonic bandgap fiber device obtained by infiltrating the air holes of a photonic crystal fiber (PCF) with a dual-frequency liquid crystal (LC) with pre-tilted molecules. Compared to previously demonstrated devices of this kind, the main new feature of this...... one is its continuous tunability due to the fact that the used LC does not exhibit reverse tilt domain defects and threshold effects. Furthermore, the dual-frequency features of the LC enables electrical control of the spectral position of the bandgaps towards both shorter and longer wavelengths in...

  7. Polarization properties of photonic bandgap fibers

    DEFF Research Database (Denmark)

    Broeng, Jes; Libori, Stig E. Barkou; Bjarklev, Anders Overgaard

    2000-01-01

    We present the first analysis of polarization properties of photonic bandgap fibers. Strong birefringence may be obtained for modest non-uniformities in and around the core region, suggesting the use of photonic bandgap fibers as polarization maintaining components.......We present the first analysis of polarization properties of photonic bandgap fibers. Strong birefringence may be obtained for modest non-uniformities in and around the core region, suggesting the use of photonic bandgap fibers as polarization maintaining components....

  8. Photonic bandgap fiber bundle spectrometer

    CERN Document Server

    Hang, Qu; Syed, Imran; Guo, Ning; Skorobogatiy, Maksim

    2010-01-01

    We experimentally demonstrate an all-fiber spectrometer consisting of a photonic bandgap fiber bundle and a black and white CCD camera. Photonic crystal fibers used in this work are the large solid core all-plastic Bragg fibers designed for operation in the visible spectral range and featuring bandgaps of 60nm - 180nm-wide. 100 Bragg fibers were chosen to have complimentary and partially overlapping bandgaps covering a 400nm-840nm spectral range. The fiber bundle used in our work is equivalent in its function to a set of 100 optical filters densely packed in the area of ~1cm2. Black and white CCD camera is then used to capture spectrally "binned" image of the incoming light at the output facet of a fiber bundle. To reconstruct the test spectrum from a single CCD image we developed an algorithm based on pseudo-inversion of the spectrometer transmission matrix. We then study resolution limit of this spectroscopic system by testing its performance using spectrally narrow test peaks (FWHM 5nm-25nm) centered at va...

  9. Electrically tunable liquid crystal photonic bandgap fiber laser

    DEFF Research Database (Denmark)

    Olausson, Christina Bjarnal Thulin; Scolari, Lara; Wei, Lei;

    2010-01-01

    We demonstrate electrical tunability of a fiber laser by using a liquid crystal photonic bandgap fiber. Tuning of the laser is achieved by combining the wavelength filtering effect of a liquid crystal photonic bandgap fiber device with an ytterbium-doped photonic crystal fiber. We fabricate an all......-spliced laser cavity based on a liquid crystal photonic bandgap fiber mounted on a silicon assembly, a pump/signal combiner with single-mode signal feed-through and an ytterbium-doped photonic crystal fiber. The laser cavity produces a single-mode output and is tuned in the range 1040-1065nm by applying...

  10. Actively doped solid core Photonic Bandgap Fiber

    DEFF Research Database (Denmark)

    Broeng, Jes; Olausson, Christina Bjarnal Thulin; Lyngsøe, Jens Kristian;

    2010-01-01

    Solid photonic bandgap fibers offer distributed spectral filtering with extraordinary high suppression. This opens new possibilities of artificially tailoring the gain spectrum of fibers. We present record-performance of such fibers and outline their future applications....

  11. Novel device concepts for optical WDM communications based on silicon etalons, fiber resonators and photonic bandgap fibers

    OpenAIRE

    Tuominen, Jesse

    2008-01-01

    Since the invention of the Erbium-doped fiber amplifier in 1987 and the preceding advances in low-loss single-mode fiber technology, fiber optic wavelength-division-multiplexing (WDM) has been the dominant technology of long-haul data transmission in the 1.55-mm region. Modern dense WDM (DWDM) systems can utilize more than 60 transmission channels in the C-band (1530-1570 nm) with a channel spacing of only 25 GHz. The combination of high modulation frequencies and small channel spacing place ...

  12. Porous-core honeycomb bandgap THz fiber

    DEFF Research Database (Denmark)

    Nielsen, Kristian; Rasmussen, Henrik K.; Jepsen, Peter Uhd;

    2011-01-01

    In this Letter we propose a novel (to our knowledge) porous-core honeycomb bandgap design. The holes of the porous core are the same size as the holes in the surrounding cladding, thereby giving the proposed fiber important manufacturing benefits. The fiber is shown to have a 0:35-THz......-wide fundamental bandgap centered at 1:05 THz. The calculated minimum loss of the fiber is 0:25 dB=cm....

  13. Advances in photonic bandgap fiber functionality

    DEFF Research Database (Denmark)

    Lyngsøe, Jens Kristian

    In order to take advantage of the many intriguing optical properties of photonic bandgap fibers, there are some technological challenges that have to be addressed. Among other things this includes transmission loss and the fibers ability to maintain field polarization. The work presented in this ......In order to take advantage of the many intriguing optical properties of photonic bandgap fibers, there are some technological challenges that have to be addressed. Among other things this includes transmission loss and the fibers ability to maintain field polarization. The work presented...

  14. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Science.gov (United States)

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2014-07-08

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  15. Continuously tunable all-in-fiber devices based on thermal and electrical control of negative dielectric anisotropy liquid crystal photonic bandgap fibers

    DEFF Research Database (Denmark)

    Wei, Lei; Eskildsen, Lars; Weirich, Johannes;

    2009-01-01

    and corresponding activation loss are measured by using polarized light and a full broadband polarization control setup. The electrically induced phase shift on the Poincaré sphere and corresponding birefringence change are also measured. According to the results, tunable wave plates working in the wavelength range......We infiltrate photonic crystal fibers with a negative dielectric anisotropy liquid crystal. 396nm bandgap shift is obtained in the temperature range 22°C-80°C, and 67 nm shift of long-wavelength bandgap edge is achieved by applying a voltage of 200Vrms. The polarization sensitivity...... 1520nm-1580nm and a potential for realizing a polarimeter working at 1310nm region are experimentally demonstrated....

  16. Electrically controllable liquid crystal photonic bandgap fiber with dual-frequency control

    DEFF Research Database (Denmark)

    Scolari, Lara; Alkeskjold, Thomas Tanggaard; Riishede, Jesper;

    2005-01-01

    We present an electrically tunable liquid crystal photonic bandgap fiber device based on a dual frequency liquid crystal with pre-tilted molecules that allows the bandgaps to be continuously tuned. The frequency dependent behavior of the liquid crystal enables active shifting of the bandgaps toward...

  17. Thermal tunability of photonic bandgaps in liquid crystal filled polymer photonic crystal fiber

    Science.gov (United States)

    Wang, Doudou; Chen, Guoxiang; Wang, Lili

    2016-05-01

    A highly tunable bandgap-guiding polymer photonic crystal fiber is designed by infiltrating the cladding air holes with liquid crystal 5CB. Structural parameter dependence and thermal tunability of the photonic bandgaps, mode properties and confinement losses of the designed fiber are investigated. Bandgaps red shift as the temperature goes up. Average thermal tuning sensitivity of 30.9 nm/°C and 20.6 nm/°C is achieved around room temperature for the first and second photonic bandgap, respectively. Our results provide theoretical references for applications of polymer photonic crystal fiber in sensing and tunable fiber-optic devices.

  18. Air-guiding Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Hansen, Theis Peter

    2005-01-01

    Photonic bandgap fibers that guide light in an air core have attracted much interest since their first demonstration in 1999. The prospect of low-loss guiding of light in air has importance for a multitude of applications, such as data transmission, gas sensors, dispersion compensation and guiding...

  19. Liquid Crystals and Photonic Bandgap Fiber Components

    DEFF Research Database (Denmark)

    Weirich, Johannes; Wei, Lei; Scolari, Lara;

    Liquid Crystal(LC)filled Photonic Crystal Fibers(PCFs) represent a promising platform for the design and the fabrication of tunable all-in fiber devices. Tunability is achieved by varying the refractive index of the LC thermally, optically or electrically. In this contribution we present important...

  20. Advances in Solid Core Photonic Bandgap Fiber Amplifiers

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard; Laurila, Marko; Petersen, Sidsel Rübner;

    2012-01-01

    We present recent development of photonic crystal fiber amplifiers containing photonic bandgap structures for enhanced spectral and modal filtering functionality.......We present recent development of photonic crystal fiber amplifiers containing photonic bandgap structures for enhanced spectral and modal filtering functionality....

  1. Transmission properties of hollow-core photonic bandgap fibers

    DEFF Research Database (Denmark)

    Falk, Charlotte Ijeoma; Hald, Jan; Petersen, Jan C.;

    2010-01-01

    Variations in optical transmission of four types of hollow-core photonic bandgap fibers are measured as a function of laser frequency. These variations influence the potential accuracy of gas sensors based on molecular spectroscopy in hollow-core fibers.......Variations in optical transmission of four types of hollow-core photonic bandgap fibers are measured as a function of laser frequency. These variations influence the potential accuracy of gas sensors based on molecular spectroscopy in hollow-core fibers....

  2. Modeling of realistic cladding structures for photonic bandgap fibers

    DEFF Research Database (Denmark)

    Mortensen, Niels Asger; Nielsen, Martin Dybendal

    2004-01-01

    Cladding structures of photonic bandgap fibers often have airholes of noncircular shape, and, typically, close-to-hexagonal airholes with curved corners are observed. We study photonic bandgaps in such structures by aid of a two-parameter representation of the size and curvature. For the fundamen......Cladding structures of photonic bandgap fibers often have airholes of noncircular shape, and, typically, close-to-hexagonal airholes with curved corners are observed. We study photonic bandgaps in such structures by aid of a two-parameter representation of the size and curvature. For the...... fundamental bandgap we find that the bandgap edges (the intersections with the air line) shift toward shorter wavelengths when the air-filling fraction f is increased. The bandgap also broadens, and the relative bandwidth increases exponentially with f2. Compared with recent experiments [Nature 424, 657 (2003...

  3. Gas sensing using air-guiding photonic bandgap fibers

    DEFF Research Database (Denmark)

    Ritar, Tuomo; Tuominen, J.; Ludvigsen, Hanne;

    2004-01-01

    We demonstrate the high sensitivity of gas sensing using a novel air-guiding photonic bandgap fiber. The bandgap fiber is spliced to a standard single-mode fiber at the input end for easy coupling and filled with gas through the other end placed in a vacuum chamber. The technique is applied to ch...... to characterize absorption lines of acetylene and hydrogen cyanide employing a tunable laser as light source. Measurements with a LED are also performed for comparison. Detection of weakly absorbing gases such as methane and ammonia is explored.......We demonstrate the high sensitivity of gas sensing using a novel air-guiding photonic bandgap fiber. The bandgap fiber is spliced to a standard single-mode fiber at the input end for easy coupling and filled with gas through the other end placed in a vacuum chamber. The technique is applied...

  4. Photonic bandgap fiber lasers and multicore fiber lasers for next generation high power lasers

    DEFF Research Database (Denmark)

    Shirakawa, A.; Chen, M.; Suzuki, Y.;

    2014-01-01

    Photonic bandgap fiber lasers are realizing new laser spectra and nonlinearity mitigation that a conventional fiber laser cannot. Multicore fiber lasers are a promising tool for power scaling by coherent beam combination. © 2014 OSA....

  5. Mode Division Multiplexing Exploring Hollow-Core Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Xu, Jing; Lyngso, Jens Kristian; Leick, Lasse;

    2013-01-01

    We review our recent exploratory investigations on mode division multiplexing using hollow-core photonic bandgap fibers (HC-PBGFs). Compared with traditional multimode fibers, HC-PBGFs have several attractive features such as ultra-low nonlinearities, low-loss transmission window around 2 µm etc...

  6. All-optical modulation in dye-doped nematic liquid crystal photonic bandgap fibers

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard; Lægsgaard, Jesper; Bjarklev, Anders Overgaard;

    2004-01-01

    Photonic crystal fibers (PCFs) have attracted significant attention during the last years and much research has been devoted to develop fiber designs for various applications, hereunder tunable fiber devices. Recently, thermally and electrically tunable PCF devices based on liquid crystals (LCs......) have been demonstrated. However, optical tuning of the LC PCF has until now not been demonstrated. Here we demonstrate an all-optical modulator, which utilizes a pulsed 532nm laser to modulate the spectral position of the bandgaps in a photonic crystal fiber infiltrated with a dye-doped nematic liquid...

  7. Ultrasensitive twin-core photonic bandgap fiber refractive index sensor

    DEFF Research Database (Denmark)

    Yuan, Scott Wu; Town, Graham; Bang, Ole

    2009-01-01

    We propose a microfluidic refractive index sensor based on new polymer twin-core photonic bandgap fiber (PBGF). The sensor can achieve ultrahigh detection limit, i.e. >1.4times10-7RIU refractive index unit (RIU), by measuring the coupling wavelength shift.......We propose a microfluidic refractive index sensor based on new polymer twin-core photonic bandgap fiber (PBGF). The sensor can achieve ultrahigh detection limit, i.e. >1.4times10-7RIU refractive index unit (RIU), by measuring the coupling wavelength shift....

  8. Broadband optically controlled switching effect in a microfluid-filled photonic bandgap fiber

    Science.gov (United States)

    Guo, Junqi; Liu, Yan-ge; Wang, Zhi; Luo, Mingming; Huang, Wei; Han, Tingting; Liu, Xiaoqi

    2016-05-01

    Broadband optically controlled switching in a microfluid-filled photonic bandgap fiber (MF-PBGF) was observed and investigated. The MF-PBGF was formed by infusing a temperature-sensitive high-index fluid into all of the cladding holes of a microstructured optical fiber (MOF). The fiber was then side pumped with a 532 nm continuous wave laser. An extinction ratio of greater than 20 dB at most of the bandgap wavelengths (more than 200 nm) was obtained with a switching power of ∼147 mW. Theoretical and experimental investigations revealed that the effect originated from changes in the temperature gradient induced by heat absorption of the fiber coating with laser illumination. These investigations offer a new and simple approach to achieve wideband and flexible all-optical fiber switching devices without using any photosensitive materials.

  9. Design of photonic bandgap fibers by topology optimization

    DEFF Research Database (Denmark)

    Dühring, Maria Bayard; Sigmund, Ole; Feurer, Thomas

    2010-01-01

    A method based on topology optimization is presented to design the cross section of hollow-core photonic bandgap fibers for minimizing energy loss by material absorption. The optical problem is modeled by the timeharmonic wave equation and solved with the finite element program Comsol Multiphysics...

  10. Photonic bandgap fibers: theory and experiments

    DEFF Research Database (Denmark)

    Bjarklev, Anders Overgaard; Broeng, Jes; Libori, Stig E. Barkou

    2000-01-01

    We will in this presentation address, show how the fiber cladding structure influences the resulting waveguiding properties. The core may be introduced by breaking the periodicity of the air holes at the center of the fiber. It has been demonstrated experimentally that this makes it possible to...

  11. Refractive index sensing in an all-solid twin-core photonic bandgap fiber

    DEFF Research Database (Denmark)

    Yuan, Scott Wu; Town, Graham E.; Bang, Ole

    2010-01-01

    We describe a highly sensitive refractive index sensor based on a twin-core coupler in an all-solid photonic bandgap guiding optical fiber. A single hole acts as a microfluidic channel for the analyte, which modifies the coupling between the cores, and avoids the need for selective filling....... By operating in the bandgap guiding regime the proposed sensor is capable of measuring refractive indices around that of water, and because the analyte varies the coupling coefficient (i.e., instead of phase matching condition) the device is capable of both high sensitivity and a relatively large dynamic range....

  12. Biased liquid crystal photonic bandgap fiber

    DEFF Research Database (Denmark)

    Weirich, Johannes; Lægsgaard, Jesper; Alkeskjold, Thomas Tanggaard;

    2008-01-01

    We simulate the director structure of all capillaries in a biased photonic crystal fiber infiltrated with liquid crystals. Various mode simulations for different capillaries show the necessity to consider the entire structure.......We simulate the director structure of all capillaries in a biased photonic crystal fiber infiltrated with liquid crystals. Various mode simulations for different capillaries show the necessity to consider the entire structure....

  13. Soliton formation in hollow-core photonic bandgap fibers

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper

    2009-01-01

    The formation of solitons upon compression of linearly chirped pulses in hollow-core photonic bandgap fibers is investigated numerically. The dependence of soliton duration on the chirp and power of the input pulse and on the dispersion slope of the fiber is investigated, and the validity...... of an approximate scaling relation is tested. It is concluded that compression of input pulses of several ps duration and sub-MW peak power can lead to a formation of solitons with ∼100 fs duration and multi-megawatt peak powers. The dispersion slope of realistic hollow-core fibers appears to be the main obstacle...

  14. Compact Design of an Electrically Tunable and Rotatable Polarizer Based on a Liquid Crystal Photonic Bandgap Fiber

    DEFF Research Database (Denmark)

    Wei, Lei; Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard

    2009-01-01

    In this letter, a compact electrically controlled broadband liquid crystal (LC) photonic bandgap fiber polarizer is designed and fabricated. A good fiber coupling quality between two single-mode fibers and one 10-mm-long LC-filled photonic crystal fiber is obtained and protected by using SU-8 fiber...... fixing structures during the device assembly. The total insertion loss of this all-in-fiber device is 2.7 dB. An electrically tunable polarization extinction ratio of 21.3 dB is achieved with 45$^{circ}$ rotatable transmission axis as well as switched on and off in the wavelength range of 1300–1600 nm....

  15. Biased liquid crystal infiltrated photonic bandgap fiber

    DEFF Research Database (Denmark)

    Weirich, Johannes; Lægsgaard, Jesper; Scolari, Lara;

    2009-01-01

    A simulation scheme for the transmission spectrum of a photonic crystal fiber infiltrated with a nematic liquid crystal and subject to an external bias is presented. The alignment of the biased liquid crystal is simulated using the finite element method to solve the relevant system of coupled...... partial differential equations. From the liquid crystal alignment the full tensorial dielectric permittivity in the capillaries is derived. The transmission spectrum for the photonic crystal fiber is obtained by solving the generalized eigenvalue problem deriving from Maxwell’s equations using a vector...... element based finite element method. We demonstrate results for a splay aligned liquid crystal infiltrated into the capillaries of a four-ring photonic crystal fiber and compare them to corresponding experiments....

  16. Tunable All-in-Fiber Waveplates Based on Negative Dielectric Liquid Crystal Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Wei, Lei; Eskildsen, Lars; Weirich, Johannes;

    2008-01-01

    Tunable all-in-fiber waveplates based on negative dielectric liquid crystal photonic bandgap fibers are presented. The birefringence can be tuned electrically and thermally to work as a quarter-wave or a half-wave plate in the range 1520 nm-1580 nm.......Tunable all-in-fiber waveplates based on negative dielectric liquid crystal photonic bandgap fibers are presented. The birefringence can be tuned electrically and thermally to work as a quarter-wave or a half-wave plate in the range 1520 nm-1580 nm....

  17. Liquid Crystal photonic Bandgap Fiber Devices

    DEFF Research Database (Denmark)

    Wei, Lei

    . A polarizer with electrically tunable polarization extinction ratio is obtained. An on-chip tunable notch filter based on long-period gratings is presented, exhibiting high polarization sensitivity. A tunable polarization controller using negative dielectric LCs is developed, which can be thermally...... and electrically controlled to work both as a quarter-wave plate or half-wave plate. An electrically tunable bandpass filter based on two solid-core PCFs filled with different LCs is fabricated, and the tunability of the bandwidth is achieved by individually or simultaneously controlling the driving voltage...

  18. High Thermal and Electrical Tunability of Negative Dielectric Liquid Crystal Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Wei, Lei; Scolari, Lara; Weirich, Johannes;

    2008-01-01

    We infiltrate photonic crystal fibers with negative dielectric liquid crystals. 400nm bandgap shift is obtained in the range 22ºC-80ºC and 119nm shift of the long-wavelength bandgap edge is achieved by applying a voltage of 200V.......We infiltrate photonic crystal fibers with negative dielectric liquid crystals. 400nm bandgap shift is obtained in the range 22ºC-80ºC and 119nm shift of the long-wavelength bandgap edge is achieved by applying a voltage of 200V....

  19. Thermal tunability of photonic bandgaps in liquid crystal infiltrated microstructured polymer optical fibers

    DEFF Research Database (Denmark)

    Yuan, Scott Wu; Wei, Lei; Alkeskjold, Thomas Tanggaard;

    2009-01-01

    We demonstrate the photonic bandgap effect and the thermal tunability of bandgaps in microstructured polymer optical fibers infiltrated with liquid crystal. Two liquid crystals with opposite sign of the temperature gradient of the ordinary refractive index (E7 and MDA-00- 1444) are used to...

  20. Low loss liquid crystal photonic bandgap fiber in the near-infrared region

    DEFF Research Database (Denmark)

    Scolari, Lara; Wei, Lei; Gauza, S.;

    2010-01-01

    We infiltrate a photonic crystal fiber with a perdeuterated liquid crystal, which has a reduced infrared absorption. The lowest loss ever reported (about 1 dB) in the middle of the near-infrared bandgap is achieved.......We infiltrate a photonic crystal fiber with a perdeuterated liquid crystal, which has a reduced infrared absorption. The lowest loss ever reported (about 1 dB) in the middle of the near-infrared bandgap is achieved....

  1. Bandgaps of the Chalcogenide Glass Hollow-Core Photonic Crystal Fiber

    International Nuclear Information System (INIS)

    Bandgaps of chalcogenide glass hollow-core photonic crystal fibers (GLS HC-PCFs) are analyzed by using the plane-wave expansion method. A mid-infrared laser can propagate in these low confinement loss fibers when the wavelength falls into the bandgaps. For enlarging the bandgap width, an improved GLS HC-PCF is put forward, the normalized frequency kΛ of the improved fiber is from 7.2 to 8.5 in its first bandgap. The improved GLS HC-PCF with pitch of 4.2 μm can transmit the lights with wavelengths ranging from 3.1 μm to 3.7 μm. (fundamental areas of phenomenology(including applications))

  2. Mode areas and field energy distribution in honeycomb photonic bandgap fibers

    CERN Document Server

    Laegsgaard, J; Bjarklev, A; Laegsgaard, Jesper; Mortensen, Niels Asger; Bjarklev, Anders

    2003-01-01

    The field energy distributions and effective mode areas of silica-based photonic bandgap fibers with a honeycomb airhole structure in the cladding and an extra airhole defining the core are investigated. We present a generalization of the common effective area definition, suitable for the problem at hand, and compare the results for the photonic bandgap fibers with those of index-guiding microstructured fibers. While the majority of the field energy in the honeycomb photonic bandgap fibers is found to reside in the silica, a substantial fraction (up to ~30%) can be located in the airholes. This property may show such fibers particularly interesting for sensor applications, especially those based on nonlinear effects or interaction with other structures (e.g. Bragg gratings) in the glass.

  3. Micro-displacement sensors based on plastic photonic bandgap Bragg fibers

    CERN Document Server

    Qu, H; Bergeron, F; Olesik, J; Skorobogatiy, M

    2013-01-01

    We demonstrate an amplitude-based micro-displacement sensor that uses a plastic photonic bandgap Bragg fiber with one end coated with a silver layer. The reflection intensity of the Bragg fiber is characterized in response to different displacements (or bending curvatures). We note that the Bragg reflector of the fiber acts as an efficient mode stripper for the wavelengths near the edge of the fiber bandgap, which makes the sensor extremely sensitive to bending or displacements at these wavelengths. Besides, by comparison of the Bragg fiber sensor to a sensor based on a regular multimode fiber with similar outer diameter and length, we find that the Bragg fiber sensor is more sensitive to bending due to presence of mode stripper in the form of the multilayer reflector. Experimental results show that the minimum detection limit of the Bragg fiber sensor can be smaller than 5 um for displacement sensing.

  4. A vector boundary matching technique for efficient and accurate determination of photonic bandgaps in photonic bandgap fibers.

    Science.gov (United States)

    Dong, Liang

    2011-06-20

    A vector boundary matching technique has been proposed and demonstrated for finding photonic bandgaps in photonic bandgap fibers with circular nodes. Much improved accuracy, comparing to earlier works, comes mostly from using more accurate cell boundaries for each mode at the upper and lower edges of the band of modes. It is recognized that the unit cell boundary used for finding each mode at band edges of the 2D cladding lattice is not only dependent on whether it is a mode at upper or lower band edge, but also on the azimuthal mode number and lattice arrangements. Unit cell boundaries for these modes are determined by mode symmetries which are governed by the azimuthal mode number as well as lattice arrangement due to mostly geometrical constrains. Unit cell boundaries are determined for modes at both upper and lower edges of bands of modes dominated by m = 1 and m = 2 terms in their longitudinal field Fourier-Bessel expansion series, equivalent to LP0s and LP1s modes in the approximate LP mode representations, for hexagonal lattice to illustrate the technique. The novel technique is also implemented in vector form and incorporates a transfer matrix algorithm for the consideration of nodes with arbitrary refractive index profiles. Both are desired new capabilities for further explorations of advanced new designs of photonic bandgap fibers. PMID:21716499

  5. Air-guiding photonic bandgap fiber with improved triangular air-silica photonic crystal cladding

    OpenAIRE

    Yan, M; Shum, P

    2005-01-01

    We introduce a small-core air-guiding photonic crystal fiber whose cladding is made of improved air-silica photonic crystal with non-circular air holes placed in triangular lattice. The fiber achieves un-disturbed bandgap guidance over 350nm wavelength range.

  6. Highly tunable large core single-mode liquid crystal photonic bandgap fiber

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard; Lægsgaard, Jesper; Bjarklev, Anders Overgaard;

    2006-01-01

    We demonstrate a highly tunable photonic bandgap fiber, which has a large-core diameter of 25 mu m and an effective mode area of 440 mu m(2). The tunability is achieved by infiltrating the air holes of a photonic crystal fiber with an optimized liquid-crystal mixture having a large temperature...... Society of America....

  7. Broadband orbital angular momentum transmission using a hollow-core photonic bandgap fiber.

    Science.gov (United States)

    Li, Haisu; Ren, Guobin; Lian, Yudong; Zhu, Bofeng; Tang, Min; Zhao, Yuanchu; Jian, Shuisheng

    2016-08-01

    We present the viability of exploiting a current hollow-core photonic bandgap fiber (HC-PBGF) to support orbital angular momentum (OAM) states. The photonic bandgap intrinsically provides a large refractive index spacing for guiding light, leading to OAM transmission with low crosstalk. From numerical simulations, a broad OAM±1 mode transmission window with satisfied effective index separations between vector modes (>10-4) and low confinement loss (communication harnessing OAM multiplexing.

  8. SU-8 process optimization for high fiber coupling efficiency of liquid crystal filled photonic bandgap fiber components

    DEFF Research Database (Denmark)

    Wei, Lei; Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard

    2009-01-01

    SU-8 structures are built up to increase the fiber coupling efficiency of liquid crystal photonic bandgap fiber components. The resolution reduction of UV exposure is minimized to 4%, and insertion loss is reduced to 2.7dB....

  9. Low index-contrast photonic bandgap fiber for transmission of short pulsed light

    DEFF Research Database (Denmark)

    Riishede, Jesper; Lægsgaard, Jesper; Broeng, Jes;

    2004-01-01

    The use of low-index-contrast photonic bandgap (PBG) fiber for transmission of short pulsed light is discussed. PBG fibers have positive waveguide dispersion at long wavelengths at which conventional index-guiding fibers have negative waveguide dispersion. PBG fibers with low-index contrast can...... be used to obtain fibers with zero dispersion and a large mode area below 800 nm$+3$/. The results show that the PBG fiber is less sensitive to nonlinear effects and allows transmission of considerably larger intensities....

  10. Transmission Bandwidth Tunability of a Liquid-Filled Photonic Bandgap Fiber

    Institute of Scientific and Technical Information of China (English)

    ZOU Bing; LIU Yan-Ge; DU Jiang-Sing; WANG Zhi; HAN Ting-Ting; XU Jian-Bo; LI Yuan; LIU Bo

    2009-01-01

    @@ A temperature tunable photonic bandgap tiber (PBGF) is demonstrated by an index-guiding photonic crystal fiber filled with high-index liquid. The temperature tunable characteristics of the fiber axe experimentally and numerically investigated. Compression of transmission bandwidth of the PBGF is demonstrated by changing the temperature of part of the fiber. The tunable transmission bandwidth with a range of 250 nm is achieved by changing the temperature from 30℃ to 90℃.

  11. Study on the photonic bandgaps of hollow-core microstructured fibers

    Institute of Scientific and Technical Information of China (English)

    Zhaolun Liu; Guiyao Zhou; Lantian Hou

    2006-01-01

    A simple method is presented to measure the transmission spectrum of hollow-core microstructured fibers in the visible, near-infrared, and mid-infrared regions. The plane wave expansion method is applied to analyze the photonic bandgaps of hollow-core microstructured fibers. The experimental results indicate that there are several strong transmission bands in the near-infrared and mid-infrared region, but hardly any transmission phenomena in the visible region, which shows that there are some bandgaps in nearinfrared wavelength. The experimental results are consistent with the numerically simulative results using a plane wave expansion method.

  12. Fabrication of Optical Fiber Devices

    Science.gov (United States)

    Andres, Miguel V.

    In this paper we present the main research activities of the Laboratorio de Fibras Opticas del Instituto de Ciencia de los Materiales de la Universidad de Valencia. We show some of the main results obtained for devices based on tapered fibers, fiber Bragg gratings, acousto-optic effects and photonic crystal fibers.

  13. Generation of Low Divergent High Power Supercontinuum Through a Large Mode Area Photonic Bandgap Fiber

    CERN Document Server

    Ghosh, S; Varshney, R K; Pal, B P

    2012-01-01

    We report generation of broadband low divergent supercontinuum over the entire wavelength window of 1.5 to 3.5 {\\mu}m from a 2.25 meter long effective single moded photonic bandgap fiber with mode area of 1100 {\\mu}m2.

  14. Ultrasensitive refractive index sensor based on twin-core photonic bandgap fibers

    DEFF Research Database (Denmark)

    Yuan, Scott Wu; Town, Graham E.; Bang, Ole

    We have theoretically investigated twin-core all-solid photonic bandgap fibers (PBGFs) for evanescent wave sensing of refractive index within one single microfluidic analyte channel centered between the two cores. The sensor can achieve ultrahigh sensitivity by detecting the change in transmission...

  15. 30W, 1178nm Yb-doped photonic bandgap fiber amplifier

    DEFF Research Database (Denmark)

    Shirakawa, Akira; Maruyama, Hiroki; Ueda, Ken-ichi;

    2009-01-01

    High-power, high-efficiency ytterbium-doped solid-core photonic-bandgap fiber amplification at the long-wavelength edge of the Yb gain band is reported. Amplified-spontaneous-emission-free, 30W nonpolarized and 25W linearly-polarized 1178nm outputs have been achieved with

  16. Reflection-induced bias error in an air-core photonic bandgap fiber optic gyroscope.

    Science.gov (United States)

    Zhang, Zuchen; Xu, Xiaobin; Zhang, Zhihao; Song, Ningfang; Zhang, Chunxi

    2016-01-15

    Analysis of the bias error induced by reflections in an air-core photonic bandgap fiber gyroscope is performed by both simulation and experiment. The bias error is sinusoidally periodic under modulation, and its intensity is related to the relative positions of the reflection points. A simple and effective method for the suppression of the error is proposed, and it has been verified experimentally.

  17. Experimental investigation of hollow-core photonic crystal fibers with five photonic band-gaps

    Institute of Scientific and Technical Information of China (English)

    YUAN Jin-hui; HOU Lan-tian; WEI Dong-bin; WANG Hai-yun; ZHOU Gui-yao

    2008-01-01

    The hollow-core photonic crystal fibers (HC-PCFs) with integrity structure have been fabricated with an improved twice stack-and-draw technique. The transmission spectrum shows that five photonic band-gaps within 450-1100 nm have been obtained.And the green light transmission in the HC-PCFs'has been observed remarkably.

  18. Thermally tunable bandgaps in a hybrid As2S3/silica photonic crystal fiber

    DEFF Research Database (Denmark)

    Markos, Christos; Stefani, Alessio; Bang, Ole

    2015-01-01

    We report the fabrication and characterization of a hybrid silica photonic crystal fiber (PCF) with integrated chalcogenide glass layers and we show how the bandgaps of the fiber can be thermally tuned. The formation of the high-index chalcogenide films on the inner surface of the PCF holes...... revealed resonances as strong as similar to 35 dB both in the visible and infrared regime. Temperature measurements indicate that the transmission windows can be tuned with a sensitivity as high as similar to 3.5 nm/degrees C. The proposed fiber has potential for all-fiber filtering and temperature sensing....

  19. Single-mode ytterbium-doped large-mode-area photonic bandgap rod fiber amplifier

    OpenAIRE

    Alkeskjold, Thomas Tanggaard; Laurila, Marko; Scolari, Lara; Broeng, Jes

    2011-01-01

    Enabling Single-Mode (SM) operation in Large-Mode-Area (LMA) fiber amplifiers and lasers is critical, since a SM output ensures high beam quality and excellent pointing stability. In this paper, we demonstrate and test a new design approach for achieving SM LMA rod fibers by using a photonic bandgap structure. The structure allows resonant coupling of higher-order modes from the core and acts as a spatially Distributed Mode Filter (DMF). With this approach, we demonstrate passive SM performan...

  20. Manipulating the Propagation of Solitons with Solid-Core Photonic Bandgap Fibers

    Directory of Open Access Journals (Sweden)

    O. Vanvincq

    2012-01-01

    Full Text Available We review the dynamics of soliton self-frequency shift induced by Raman gain in special solid-core photonic bandgap fibers and its consequences in terms of supercontinuum generation. These photonic bandgap fibers have been designed to allow nonlinear experiments in the first bandgap without suffering from significant loss even when working close to the photonic bandgap edge. We studied experimentally, numerically, and analytically the extreme deceleration of the soliton self-frequency shift at the long-wavelength edge of the first transmission window. This phenomenon is interpreted as being due to a large variation of the group-velocity dispersion in this spectral range and has been obtained with no significant power loss. Then, we investigated experimentally and numerically the generation of supercontinuum in this kind of fibers, in both spectral and temporal domains. In particular, we demonstrated an efficient tailoring of the supercontinuum spectral extension as well as a strong noise reduction at its long-wavelength edge.

  1. Investigation of residual core ellipticity induced nonreciprocity in air-core photonic bandgap fiber optical gyroscope.

    Science.gov (United States)

    Xu, Xiaobin; Zhang, Zuchen; Zhang, Zhihao; Jin, Jing; Song, Ningfang

    2014-11-01

    Air-core photonic bandgap fiber (PBF) is an excellent choice for fiber optic gyroscope owing to its incomparable adaptability of environment. Strong and continuous polarization mode coupling is found in PBFs with an average intensity of ~-30 dB, but the coupling arrives at the limit when the maximum optical path difference between the primary waves and the polarization-mode-coupling-induced secondary waves reaches ~10mm, which is corresponding to the PBF length of ~110 m according to the birefringence in the PBF. Incident light with the low extinction ratio (ER) can suppress the birth of the polarization-mode-coupling-induced secondary waves, but the low-ER light obtained by the conventional Lyot depolarizers does not work here. Consequently, a large nonreciprocity and a bias error of ~13°/h are caused in the air-core photonic bandgap fiber optical gyroscope (PBFOG) with a PBF coil of ~268 m.

  2. The Second Order Guided Modes Based on Photonic Bandgap Effects in Air/Glass Photonic Crystal Fibers

    Institute of Scientific and Technical Information of China (English)

    YAO Lei; LOU Shu-Qin; JIAN Shui-Sheng

    2009-01-01

    We introduce a defect site in the periodic structure of a photonic bandgap fiber,to confine and guide the second order mode by photonic bandgap effects.Based on a high air-filling fraction photonic crystal cladding structure,a simplified model with an equivalent air cladding was proposed to explore and analyze the properties of this second order guided mode.

  3. THz Photonic Band-Gap Prisms Fabricated by Fiber Drawing

    DEFF Research Database (Denmark)

    Busch, Stefan F.; Xu, Lipeng; Stecher, Matthias;

    2012-01-01

    We suggest a novel form of polymeric based 3D photonic crystal prisms for THz frequencies which could be fabricated using a standard fiber drawing technique. The structures are modeled and designed using a finite element analyzing technique. Using this simulation software we theoretically study...

  4. Gaussian Filtering with Tapered Oil-Filled Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Brunetti, Anna Chiara; Scolari, Lara; Weirich, Johannes;

    2008-01-01

    A tunable Gaussian filter based on a tapered oil-filled photonic crystal fiber is demonstrated. The filter is centered at X=1364nm with a bandwidth (FWHM) of 237nm. Tunability is achieved by changing the temperature of the filter. A shift of 210nm of the central wavelength has been observed...

  5. Microstructured and Photonic Bandgap Fibers for Applications in the Resonant Bio- and Chemical Sensors

    Directory of Open Access Journals (Sweden)

    Maksim Skorobogatiy

    2009-01-01

    Full Text Available We review application of microstructured and photonic bandgap fibers for designing resonant optical sensors of changes in the value of analyte refractive index. This research subject has recently invoked much attention due to development of novel fiber types, as well as due to development of techniques for the activation of fiber microstructure with functional materials. Particularly, we consider two sensors types. The first sensor type employs hollow core photonic bandgap fibers where core guided mode is confined in the analyte filled core through resonant effect in the surrounding periodic reflector. The second sensor type employs metalized microstructured or photonic bandgap waveguides and fibers, where core guided mode is phase matched with a plasmon propagating at the fiber/analyte interface. In resonant sensors one typically employs fibers with strongly nonuniform spectral transmission characteristics that are sensitive to changes in the real part of the analyte refractive index. Moreover, if narrow absorption lines are present in the analyte transmission spectrum, due to Kramers-Kronig relation this will also result in strong variation in the real part of the refractive index in the vicinity of an absorption line. Therefore, resonant sensors allow detection of minute changes both in the real part of the analyte refractive index (10−6–10−4 RIU, as well as in the imaginary part of the analyte refractive index in the vicinity of absorption lines. In the following we detail various resonant sensor implementations, modes of operation, as well as analysis of sensitivities for some of the common transduction mechanisms for bio- and chemical sensing applications. Sensor designs considered in this review span spectral operation regions from the visible to terahertz.

  6. Photonic Bandgap Propagation in All-Solid Chalcogenide Microstructured Optical Fibers

    Directory of Open Access Journals (Sweden)

    Celine Caillaud

    2014-08-01

    Full Text Available An original way to obtain fibers with special chromatic dispersion and single-mode behavior is to consider microstructured optical fibers (MOFs. These fibers present unique optical properties thanks to the high degree of freedom in the design of their geometrical structure. In this study, the first all-solid all-chalcogenide MOFs exhibiting photonic bandgap transmission have been achieved and optically characterized. The fibers are made of an As38Se62 matrix, with inclusions of Te20As30Se50 glass that shows a higher refractive index (n = 2.9. In those fibers, several transmission bands have been observed in mid infrared depending on the geometry. In addition, for the first time, propagation by photonic bandgap effect in an all-chalcogenide MOF has been observed at 3.39 µm, 9.3 µm, and 10.6 µm. The numerical simulations based on the optogeometric properties of the fibers agree well with the experimental characterizations.

  7. Scattering loss analysis and structure optimization of hollow-core photonic bandgap fiber

    Science.gov (United States)

    Song, Jingming; Wu, Rong; Sun, Kang; Xu, Xiaoliang

    2016-06-01

    Effects of core structure in 7 cell hollow-core photonic bandgap fibers (HC-PBGFs) on scattering loss are analyzed by means of investigating normalized interface field intensity. Fibers with different core wall thickness, core radius and rounding corner of air hole are simulated. Results show that with thick core wall and expanded core radius, scattering loss could be greatly reduced. The scattering loss of the HC-PBGFs in the wavelength range of 1.5-1.56 μm could be decreased by about 50 % of the present level with optimized core structure design.

  8. Enhanced Two-Photon Absorption in a Hollow-Core Photonic Bandgap Fiber

    CERN Document Server

    Saha, Kasturi; Londero, Pablo; Gaeta, Alexander L

    2010-01-01

    We show that two-photon absorption (TPA) in Rubidium atoms can be greatly enhanced by the use of a hollow-core photonic bandgap fiber. We investigate off-resonant, degenerate Doppler-free TPA on the 5S1/2 - 5D5/2 transition and observe 1% absorption of a pump beam with a total power of only 1 mW in the fiber. These results are verified by measuring the amount of emitted blue fluorescence and are consistent with the theoretical predictions which indicate that transit time effects play an important role in determining the two-photon absorption cross-section in a confined geometry.

  9. Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

    Directory of Open Access Journals (Sweden)

    Kuen-Hsien Wu

    2015-09-01

    Full Text Available Porous-silicon (PS multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells.

  10. Characteristics of Bragg Gratings in All-Solid Photonic Bandgap Fiber

    Institute of Scientific and Technical Information of China (English)

    Bai-Ou Guan; Zhi Wang; Yang Zhang; Da Chen

    2008-01-01

    We report on fiber Bragg gratings in all-solid photonie bandgap fiber that was composed of a triangular array of high-index Ge-doped rods in pure silica background with fluorine-doped index-depressed layer surrounding the Ge-doped rod. Fiber Bragg gratings were photowritten with 193 nm ArF excimer laser and characterized for their response to strain, temperature, bending, and torsion. These gratings couple light from the forward core mode to not only backward core mode but also backward rod modes. This results in multiple resonance peaks in the reflection spectrum. All resonance wavelengths exhibited the same temperature and strain response with coefficient similar to that of Bragg gratings in standard single-mode fiber. The strength of the resonance peaks corresponding to the backward rod modes showed high sensitivity to bending and torsion.

  11. Determining the Origin of Half-bandgap-voltage Electroluminescence in Bifunctional Rubrene/C60 Devices

    Science.gov (United States)

    Chen, Qiusong; Jia, Weiyao; Chen, Lixiang; Yuan, De; Zou, Yue; Xiong, Zuhong

    2016-05-01

    Lowering the driving voltage of organic light-emitting diodes (OLEDs) is an important approach to reduce their energy consumption. We have fabricated a series of bifunctional devices (OLEDs and photovoltaics) using rubrene and fullerene (C60) as the active layer, in which the electroluminescence threshold voltage(~1.1 V) was half the value of the bandgap of rubrene. Magneto-electroluminescence (MEL) response of planner heterojunction diodes exhibited a small increase in response to a low magnetic field strength (20 mT). When a hole-transport layer with a low mobility was included in these devices, the MEL response reversed in shape, and simultaneously, the EL threshold voltage became larger than the bandgap voltage. When bulk heterojunction device was examined, the amplitude of MEL curves presented an anomalous voltage-dependence. Following an analysis of the MEL responses of these devices, we proposed that the EL of half-bandgap-voltage device originated from bimolecular triplet-triplet annihilation in the rubrene film, rather than from singlet excitons that formed via an interface auger recombination. This work provides critical insight into the mechanisms of OLED emission and will help advance the applications of bifunctional devices.

  12. Determining the Origin of Half-bandgap-voltage Electroluminescence in Bifunctional Rubrene/C60 Devices

    Science.gov (United States)

    Chen, Qiusong; Jia, Weiyao; Chen, Lixiang; Yuan, De; Zou, Yue; Xiong, Zuhong

    2016-01-01

    Lowering the driving voltage of organic light-emitting diodes (OLEDs) is an important approach to reduce their energy consumption. We have fabricated a series of bifunctional devices (OLEDs and photovoltaics) using rubrene and fullerene (C60) as the active layer, in which the electroluminescence threshold voltage(~1.1 V) was half the value of the bandgap of rubrene. Magneto-electroluminescence (MEL) response of planner heterojunction diodes exhibited a small increase in response to a low magnetic field strength (20 mT). When a hole-transport layer with a low mobility was included in these devices, the MEL response reversed in shape, and simultaneously, the EL threshold voltage became larger than the bandgap voltage. When bulk heterojunction device was examined, the amplitude of MEL curves presented an anomalous voltage-dependence. Following an analysis of the MEL responses of these devices, we proposed that the EL of half-bandgap-voltage device originated from bimolecular triplet-triplet annihilation in the rubrene film, rather than from singlet excitons that formed via an interface auger recombination. This work provides critical insight into the mechanisms of OLED emission and will help advance the applications of bifunctional devices. PMID:27142285

  13. Broadband orbital angular momentum transmission using a hollow-core photonic bandgap fiber.

    Science.gov (United States)

    Li, Haisu; Ren, Guobin; Lian, Yudong; Zhu, Bofeng; Tang, Min; Zhao, Yuanchu; Jian, Shuisheng

    2016-08-01

    We present the viability of exploiting a current hollow-core photonic bandgap fiber (HC-PBGF) to support orbital angular momentum (OAM) states. The photonic bandgap intrinsically provides a large refractive index spacing for guiding light, leading to OAM transmission with low crosstalk. From numerical simulations, a broad OAM±1 mode transmission window with satisfied effective index separations between vector modes (>10-4) and low confinement loss (power weight for OAM mode) is found to be affected by the modal effective area. Simulation results also show HC-PBGF based OAM transmission is immune to fabrication inaccuracies near the hollow core. This work illustrates that HC-PBGF is a competitive candidate for high-capacity communication harnessing OAM multiplexing. PMID:27472626

  14. High sensitivity high temperature sensor based on SMS structure with large-core all-solid bandgap fiber as the multimode section

    Science.gov (United States)

    Franco, Marcos A. R.; Cruz, Alice L. S.; Serrão, Valdir A.; Barbosa, Carmem L.

    2014-05-01

    A fiber optic interferometric device based on a singlemode-multimode-singlemode (SMS) structure is proposed as a high sensitive high temperature sensor. The multimode section (MMF) consists of a large-core all-solid photonic bandgap fiber (AS-PBF) with silica as the background material and germanium-doped silica at the high index regions. The numerical analyses were carried out by beam propagation method. The numerical results indicate a constant high temperature sensitivity of ~-35 pm/°C over a large temperature range from 20oC to 930°C.

  15. Wide-Bandgap Semiconductor Devices for Automotive Applications

    Science.gov (United States)

    Sugimoto, M.; Ueda, H.; Uesugi, T.; Kachi, T.

    2007-06-01

    In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size inverters for future automobiles.

  16. Optical Fiber Devices in WDM Networks

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Crystal optics and fiber grating technology are two of the most important optical fiber device technologies. In this paper, we report several new devices developed in Accelink for WDM networks application.

  17. Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices

    OpenAIRE

    Muniza Faraz, Sadia

    2011-01-01

    Wide band gap semiconductors, Zinc Oxide (ZnO), Gallium Nitride (GaN) and Silicon Carbide (SiC) have been emerged to be the most promising semiconductors for future applications in electronic, optoelectronic and power devices. They offer incredible advantages in terms of their optical properties, DC and microwave frequencies power handling capability, piezoelectric properties in building electromechanical coupled sensors and transducers, biosensors and bright light emission. For producing hig...

  18. Grating solitons near the photonic bandgap of a fiber Bragg grating

    Energy Technology Data Exchange (ETDEWEB)

    Senthilnathan, K. [Photonics Research Center and Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Hong Kong (China); Ramesh Babu, P. [Department of Physics, Vellore Institute of Technology, Deemed University, Vellore 632014 (India); Porsezian, K. [Department of Physics, Pondicherry University, Pondicherry 605014 (India)]. E-mail: porsz@hotmail.com; Santhanam, V. [Department of Physics, Presidency College, University of Madras, Chennai 600005 (India); Gnanasekaran, S. [Department of Physics, Anna University, Chennai 600025 (India)

    2007-07-15

    In this paper, we consider the nonlinear pulse propagation through a fiber Bragg grating (FBG) structure wherein the nonlinearity includes both cubic and quintic effects. We study theoretically the formation of bright grating solitons in such a FBG when the carrier frequency of a nonlinear laser pulse is detuned out of the proper edge of the photonic bandgap (PBG). By using multiple scale analysis, we investigate the generation of the bright soliton near the PBG with the higher order linear and nonlinear effects. We also study the impact of quintic nonlinearity on the dispersion curves by deriving the nonlinear dispersion relation from the governing equations.

  19. Compression of realistic laser pulses in hollow-core photonic bandgap fibers

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper; Roberts, John

    2009-01-01

    Dispersive compression of chirped few-picosecond pulses at the microjoule level in a hollow-core photonic bandgap fiber is studied numerically. The performance of ideal parabolic input pulses is compared to pulses from a narrowband picosecond oscillator broadened by self-phase modulation during...... amplification. It is shown that the parabolic pulses are superior for compression of high-quality femtosecond pulses up to the few-megawatts level. With peak powers of 5-10 MW or higher, there is no significant difference in power scaling and pulse quality between the two pulse types for comparable values...

  20. Continuous generation of Rubidium vapor in hollow-core photonic band-gap fibers

    CERN Document Server

    Donvalkar, Prathamesh S; Clemmen, Stephane; Gaeta, Alexander L

    2015-01-01

    We demonstrate high optical depths (50+/-5), lasting for hours in Rubidium-filled hollow-core photonic band-gap fibers, which represents a 1000X improvement over operation times previously reported. We investigate the vapor generation mechanism using both a continuous-wave and a pulsed light source and find that the mechanism for generating the Rubidium atoms is primarily due to thermal vaporization. Continuous generation of large vapor densities should enable measurements at the single-photon level by averaging over longer time scales.

  1. Wide bandgap semiconductors. Fundamental properties and modern photonic and electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, K. [Nippon EMC Ltd. (Japan). R and D Center; Yoshikawa, A. [Chiba Univ. (Japan); Sandhu, A. (eds.) [Tokyo Institute of Technology (Japan)

    2007-07-01

    This book offers a comprehensive overview of the development, current state and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. It includes an overview of recent developments in III-V nitride semiconductors, SiC, diamond, ZnO, II-VI materials and related devices including AIGaN/GaN FET, UV LDs, white light LEDs, and cold electron emitters. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices. After review of the basic physics of WBGS and the relevance of the physical properties to the development of commercial devices, the book addresses the applications of WBGS devices for solid-state white-light illumination, medicine and gigahertz-high power telecommunications. In addition, description of recent development in the growth and applications of nitride semiconductors are complemented by chapters on the properties and device applications of SiC, diamond thin films, doping of ZnO, II-IVs and the novel BeZnSeTe/BAlGaAs material systems. Practical issues and problems such as the effect of defects on device performance are highlighted and solutions proposed based on recent studies. (orig.)

  2. Backward Secondary-Wave Coherence Errors in Photonic Bandgap Fiber Optic Gyroscopes

    Science.gov (United States)

    Xu, Xiaobin; Song, Ningfang; Zhang, Zuchen; Jin, Jing

    2016-01-01

    Photonic bandgap fiber optic gyroscope (PBFOG) is a novel fiber optic gyroscope (FOG) with excellent environment adaptability performance compared to a conventional FOG. In this work we find and investigate the backward secondary-wave coherence (BSC) error, which is a bias error unique to the PBFOG and caused by the interference between back-reflection-induced and backscatter-induced secondary waves. Our theoretical and experimental results show a maximum BSC error of ~4.7°/h for a 300-m PBF coil with a diameter of 10 cm. The BSC error is an important error source contributing to bias instability in the PBFOG and has to be addressed before practical applications of the PBFOG can be implemented. PMID:27338388

  3. Backward Secondary-Wave Coherence Errors in Photonic Bandgap Fiber Optic Gyroscopes.

    Science.gov (United States)

    Xu, Xiaobin; Song, Ningfang; Zhang, Zuchen; Jin, Jing

    2016-01-01

    Photonic bandgap fiber optic gyroscope (PBFOG) is a novel fiber optic gyroscope (FOG) with excellent environment adaptability performance compared to a conventional FOG. In this work we find and investigate the backward secondary-wave coherence (BSC) error, which is a bias error unique to the PBFOG and caused by the interference between back-reflection-induced and backscatter-induced secondary waves. Our theoretical and experimental results show a maximum BSC error of ~4.7°/h for a 300-m PBF coil with a diameter of 10 cm. The BSC error is an important error source contributing to bias instability in the PBFOG and has to be addressed before practical applications of the PBFOG can be implemented.

  4. 1178 nm all Yb-fiber laser source power-scaled by solid-core photonic bandgap fiber for 589nm generation

    DEFF Research Database (Denmark)

    Maruyama, H.; Shirakawa, A.; Ueda, K.I.;

    2009-01-01

    Here we report an 1178 nm all Yb-fiber laser source power-scaled by solid-core photonic bandgap fiber (SC-PBGF) for 589 nm generation. A 1.4 W output at 589 nm with an input power of 9 W at 1178 nm were obtained. One important advantage of PBGF is distributed filtering. Hence the gain spectrum can...

  5. Waveguiding and bending modes in a plasma photonic crystal bandgap device

    Directory of Open Access Journals (Sweden)

    B. Wang

    2016-06-01

    Full Text Available Waveguiding and bending modes are investigated in a fully tunable plasma photonic crystal. The plasma device actively controls the propagation of free space electromagnetic waves in the S to X band of the microwave spectrum. An array of discharge plasma tubes form a square crystal lattice exhibiting a well-defined bandgap, with individual active switching of the plasma elements to allow for waveguiding and bending modes to be generated dynamically. We show, through simulations and experiments, the existence of transverse electric (TE mode waveguiding and bending modes.

  6. Photolithography of thick photoresist coating for electrically controlled liquid crystal photonic bandgap fibre devices

    DEFF Research Database (Denmark)

    Wei, Lei; Khomtchenko, Elena; Alkeskjold, Thomas Tanggaard;

    2009-01-01

    Thick photoresist coating for electrode patterning in an anisotropically etched V-groove is investigated for electrically controlled liquid crystal photonic bandgap fibre devices. The photoresist step coverage at the convex corners is compared with and without soft baking after photoresist spin...... coating. Two-step UV exposure is applied to achieve a complete exposure for the thick photoresist layer at the bottom of the V-groove, and minimise the reduction in resolution and image distortion. The resolution reduction of the different open window width for electrode pattern transfer is also...

  7. Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

    2016-06-16

    Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

  8. High temperature performance of Wide Bandgap Semiconductors Devices for High Power Applications

    Directory of Open Access Journals (Sweden)

    B. N. Shashikala

    2010-12-01

    Full Text Available Wide bandgap III-Nitride semiconductor materials possess superior properties as compared to silicon and other IIIV compound materials. GaN has recently attracted a lot of interest for applications in high power electronics capable of operation at elevated temperatures. Modeling of the drift region properties of GaN Schottky rectifiers and power MOSFET to achieve breakdown voltages ranging from 200 to 5kV is presented. 1kV and 3kV Schottky rectifiers are simulated and the characteristics of the GaN devices compared with those of Si devices. The specific on- resistance Ron,sp of a GaN MOSFET is at least three orders of magnitude smaller than the corresponding n-resistance for a Si device. 5kV GaN Schottky rectifiers can deliver on-state current density of 100 A/cm2 at room temperature with aforward drop of only 1.29V because of very low drift region resistance. GaN devices would allow operation at higher breakdown voltages than the conventional Si devices.

  9. Towards self-similar propagation in a dispersion tailored and highly nonlinear segmented bandgap fiber at 2.8 micron

    CERN Document Server

    Biswas, Piyali; Biswas, Abhijit; Pal, Bishnu P

    2016-01-01

    We numerically demonstrate self-similar propagation of parabolic optical pulses through a highly nonlinear and passive specialty photonic bandgap fiber at 2.8 micron. In this context, we have proposed a scheme endowed with a rapidly varying, but of nearly-mean-zero longitudinal dispersion and modulated nonlinear profile in order to achieve self-similarity of the formed parabolic pulse propagating over longer distances. To implement the proposed scheme, we have designed a segmented bandgap fiber with suitably tapered counterparts to realize such customized dispersion with chalchogenide glass materials. A self-similar parabolic pulse with full-width-at-half-maxima of 4.12 ps and energy of ~ 39 pJ as been achieved at the output. Along with a linear chirp spanning over the entire pulse duration, 3dB spectral broadening of about 38 nm at the output has been reported.

  10. Polarization Properties of Elliptical-Hole Liquid Crystal Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Tartarini, Giovanni; Pansera, Marco; Alkeskjold, Thomas Tanggaard;

    2007-01-01

    ellipticity allow some phenomena that are not predicted yet, such as polarization-dependent losses and birefringence sign change in the wavelength range used for standard telecom fibers. Control of these features allows the design of new devices for sensing or telecommunication applications......The characteristics of triangular photonic crystal fibers (PCFs) with elliptical holes filled with a nematic liquid crystal (LC) are investigated theoretically. The analysis that is carried out using the finite-element method, including material dispersion effects, shows that LC anisotropy and hole...

  11. Bandgap Engineering of 1300 nm Quantum Dots/Quantum Well Nanostructures Based Devices

    KAUST Repository

    Alhashim, Hala H.

    2016-05-29

    The main objectives of this thesis are to develop viable process and/or device technologies for bandgap tuning of 1300-nm InGaAs/GaAs quantum-dot (QD) laser structures, and broad linewidth 1300-nm InGaAsP/InP quantum well (QW) superluminescent diode structures. The high performance bandgap-engineered QD laser structures were achieved by employing quantum-dot intermixing (QDI) based on impurity free vacancy diffusion (IFVD) technique for eventual seamless active-passive integration, and bandgap-tuned lasers. QDI using various dielectric-capping materials, such as HfO2, SrTiO3, TiO2, Al2O3 and ZnO, etc, were experimented in which the resultant emission wavelength can be blueshifted to ∼ 1100 nm ─ 1200 nm range depending on process conditions. The significant results extracted from the PL characterization were used to perform an extensive laser characterization. The InAs/GaAs quantum-dot lasers with QDs transition energies were blueshifted by ~185 nm, and lasing around ~1070 – 1190 nm was achieved. Furthermore, from the spectral analysis, a simultaneous five-state lasing in the InAs/InGaAs intermixed QD laser was experimentally demonstrated for the first time in the very important wavelength range from 1030 to 1125 nm. The QDI methodology enabled the facile formation of a plethora of devices with various emission wavelengths suitable for a wide range of applications in the infrared. In addition, the wavelength range achieved is also applicable for coherent light generation in the green – yellow – orange visible wavelength band via frequency doubling, which is a cost-effective way of producing compact devices for pico-projectors, semiconductor laser based solid state lighting, etc. [1, 2] In QW-based superluminescent diode, the problem statement lies on achieving a flat-top and ultra-wide emission bandwidth. The approach was to design an inhomogeneous active region with a comparable simultaneous emission from different transition states in the QW stacks, in

  12. Next Generation Solar Cells Based on Graded Bandgap Device Structures Utilising Rod-Type Nano-Materials

    Directory of Open Access Journals (Sweden)

    Imyhamy M. Dharmadasa

    2015-06-01

    Full Text Available Current solar cells under research and development utilise mainly one absorber layer limiting the photon harvesting capabilities. In order to develop next generation solar cells, research should move towards effective photon harvesting methods utilising low-cost solar energy materials. This will lead to reduce the $W−1 figure for direct solar energy conversion to electrical energy. In this work, a graded bandgap solar cell has been designed to absorb all photons from the UV, visible and IR regions. In addition, impurity PV effect and impact ionisation have been incorporated to enhance charge carrier creation within the same device. This new design has been experimentally tested using the most researched MOCVD grown GaAs/AlGaAs system, in order to confirm its validity. Devices with high Voc ~ 1175 mV and the highest possible FF ~ (0.85–0.87 have been produced, increasing the conversion efficiency to ~20% within only two growth runs. These devices were also experimentally tested for the existence of impurity PV effect and impact ionisation. The devices are PV active in complete darkness producing over 800 mV, Voc indicating the harvesting of IR radiation from the surroundings through impurity PV effect. The quantum efficiency measurements show over 140% signal confirming the contribution to PV action from impact ionisation. Since the concept is successfully proven, the low-cost and scalable electrodeposited semiconducting layers are used to produce graded bandgap solar cell structures. The utilisation of nano- and micro-rod type materials in graded bandgap devices are also presented and discussed in this paper. Preliminary work on glass/FTO/n-ZnS/n-CdS/n-CdTe/Au graded bandgap devices show 10%–12% efficient devices indicating extremely high Jsc values ~48 mA·cm−2, showing the high potential of these devices in achieving higher efficiencies. The detailed results on these low-cost and novel graded bandgap devices are presented in a separate

  13. SSPA's Using Reduced Conduction Angle Techniques on Wide-Bandgap Devices for Ultra High Efficiency Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A novel approach is proposed for very efficient, very reliable, low weight, wide-bandgap medium power SSPAs for Space applications operating at 400 MHz and 8GHz.

  14. Measurement and suppression of secondary waves caused by high-order modes in a photonic bandgap fiber-optic gyroscope.

    Science.gov (United States)

    Xu, Xiaobin; Gao, Fuyu; Song, Ningfang; Jin, Jing

    2016-05-16

    Air-core photonic bandgap fiber (PBF) is a good choice for fiber-optic gyroscopes (FOGs) owing to the fact that it can be adapted to a wide variety of environments. However, its multimode properties are disadvantageous for the application to FOGs. An interference-based method is proposed to precisely determine the secondary waves caused by the high-order modes and their coupling. Based on the method, two groups of secondary waves have been found, having optical path differences (OPDs) of ~1.859 m and ~0.85 m, respectively, relative to the primary waves in a PBFOG that consists of a 7-cell PBF coil, approximately 180 m in length. Multi-turn bends of the PBF at both ends of the PBF coil after the fusion splicing points are shown to suppress the intensity of these secondary waves by approximately 10 dB. PMID:27409849

  15. Wide bandgap n-type and p-type semiconductor porous junction devices as photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yuan-Pai; Horng, Sheng-Fu [Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Chao, Yu-Chiang; Meng, Hsin-Fei [Institute of Physics, National Chiao Tung University, Hsinchu 300, Taiwan (China); Zan, Hsiao-Wen, E-mail: yuchiangchao@gmail.com, E-mail: meng@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

    2011-10-12

    In junction absorber photovoltaics doped wide bandgap n-type and p-type semiconductors form a porous interpenetrating junction structure with a layer of low bandgap absorber at the interface. The doping concentration is high enough such that the junction depletion width is smaller than the pore size. The highly conductive neutral region then has a dentrite shape with fingers reaching the absorber to effectively collect the photo-carriers swept out by the junction electric field. With doping of 10{sup 19} cm{sup -3} corresponding to a depletion width of 25 nm, pore size of 32 nm, absorber thickness close to exciton diffusion length of 17 nm, absorber bandgap of 1.4 eV and carrier mobility over 10{sup -5} cm{sup 2} V{sup -1} s{sup -1}, numerical calculation shows the power conversion efficiency is as high as 19.4%. It rises to 23% for a triplet exciton absorber.

  16. Investigation on the Effect of Underwater Acoustic Pressure on the Fundamental Mode of Hollow-Core Photonic Bandgap Fibers

    Directory of Open Access Journals (Sweden)

    Adel Abdallah

    2015-01-01

    Full Text Available Recently, microstructured optical fibers have become the subject of extensive research as they can be employed in many civilian and military applications. One of the recent areas of research is to enhance the normalized responsivity (NR to acoustic pressure of the optical fiber hydrophones by replacing the conventional single mode fibers (SMFs with hollow-core photonic bandgap fibers (HC-PBFs. However, this needs further investigation. In order to fully understand the feasibility of using HC-PBFs as acoustic pressure sensors and in underwater communication systems, it is important to study their modal properties in this environment. In this paper, the finite element solver (FES COMSOL Multiphysics is used to study the effect of underwater acoustic pressure on the effective refractive index neff of the fundamental mode and discuss its contribution to NR. Besides, we investigate, for the first time to our knowledge, the effect of underwater acoustic pressure on the effective area Aeff and the numerical aperture (NA of the HC-PBF.

  17. Optical Measurement Techniques for Optical Fiber and Waveguide Devices

    Institute of Scientific and Technical Information of China (English)

    D.Y.; Kim; Y.; Park; N.H.; Seong; Y.C.Youk; J.Y.; Lee; S.; Moon; I.H.; Shin; H.S.; Ryu

    2003-01-01

    We describe three major optical characterization methods for fiber and fiber devices. A simple servo controlled scanning fiber-optic confocal microscope is proposed for determining the refractive index profile of an optical fiber. To measure the chromatic dispersion of a short length fiber a Mach-Zehnder fiber interferometer with a novel interferometric distance meter is introduced. At the end, a tomographic method is demonstrated for determining the 2-D stress profile of a fiber.

  18. Fabrication and characterization of porous-core honeycomb bandgap THz fibers

    DEFF Research Database (Denmark)

    Bao, Hualong; Nielsen, Kristian; Rasmussen, Henrik K.;

    the frequency range 0.1 to 2 THz, and numerous sharp resonant features are visible in the core power ratio, indicative of resonant coupling between the reflected field from the outer interface of the fiber and the core mode. The fiber is experimentally characterized with a commercial fiber-coupled THz...

  19. Electrically tunable long-period gratings in liquid crystal photonic bandgap fibers

    DEFF Research Database (Denmark)

    Noordegraaf, Danny; Scolari, Lara; Lægsgaard, Jesper;

    2007-01-01

    We demonstrate an aLl-electrically tunable long period grating in a photonic crystal fiber infiltrated with a nematic liquid crystal. The spectral dips and the resonance wavelengths are tuned electrically and thermally, respectively.......We demonstrate an aLl-electrically tunable long period grating in a photonic crystal fiber infiltrated with a nematic liquid crystal. The spectral dips and the resonance wavelengths are tuned electrically and thermally, respectively....

  20. Approximate equivalence between guided modes in a low-contrast photonic bandgap fiber and Maxwell TM modes of a high-contrast two-dimensional photonic structure

    CERN Document Server

    Legrand, Olivier; Vanneste, Christian

    2010-01-01

    We present a formal analogy between the eigenvalue problem for guided scalar modes in a low-contrast photonic bandgap fiber and quasi-stationary TM modes of a two-dimensional (2D) photonic structure. Using this analogy, we numerically study the confinement losses of disordered microstructured fibers through the leakage rate of an open 2D system with high refractive index inclusions. Our results show that for large values of the disorder, the confinement losses increase. However, they also suggest that losses might be improved in strongly disordered fibers by exploring ranges of physical parameters where Anderson localization sets in.

  1. Highly efficient high power single-mode fiber amplifier utilizing the distributed mode filtering bandgap rod fiber

    DEFF Research Database (Denmark)

    Laurila, Marko; Alkeskjold, Thomas T.; Jørgensen, Mette Marie;

    2012-01-01

    high average output power levels and demonstrate a 44% power improvement before the threshold-like onset of mode instabilities by operating the rod fiber in a leaky waveguide regime. We investigate the guiding dynamics of the rod fiber and explain the improved performance by thermally induced......We report on an ytterbium doped single mode distributed mode filtering rod fiber in an amplifier configuration delivering high average output power, up to 292 watts, using a mode-locked 30ps source at 1032nm with good power conversion efficiency. We study the modal stability of the output beam at...

  2. Tunable Fabry-Perot filter using hollow-core photonic bandgap fiber and micro-fiber for a narrow-linewidth laser.

    Science.gov (United States)

    Wang, Xiaozhen; Zhu, Tao; Chen, Liang; Bao, Xiaoyi

    2011-05-01

    A novel tunable fiber Fabry-Perot (FP) filter is proposed and demonstrated by using a hollow-core photonic bandgap fiber (HC-PBF) and a micro-fiber. The interference cavity is a hollow core of HC-PBF. One of the reflection mirrors is the splicing point between a section of HC-PBF and a single mode fiber. The other reflection mirror is a gold-coated end of micro-fiber that uses chemical etching process to obtain the similar diameter as the core of HC-PBF. Hence the movable mirror can be adjusted with long distance inside the hollow core of HC-PBF. Tunable FP filter is used as a mode selecting component in the reflection mode to implement stable single longitudinal mode (SLM) operation in a ring laser. With FP cavity length of 0.25 ± 0.14 mm, the wavelength of SLM laser can be tuned over 1554-1562 nm with a tuning step of 0.2-0.3 nm, a side-mode suppression ratio (SMSR) of 32-36 dB and a linewidth of 3.0-5.1 kHz. With FP cavity length of 2.37 ± 0.37 mm, the SLM laser can be tuned over 1557.3-1560.2 nm with a tuning step of 0.06-0.1 nm, a SMSR of 44-51 dB and a linewidth of 1.8-3.0 kHz. PMID:21643220

  3. Influence of air pressure on soliton formation in hollow-core photonic bandgap fibers

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper; Roberts, Peter John

    2009-01-01

    of obtaining pedestal-free output pulses. Particular emphasis is placed on the influence of the air pressure in the HC-PBG fiber. It is found that a reduction in air pressure enables an increase in the fraction of power going into the most redshifted soliton and also improves the quality of the filtered pulse...

  4. Considerations of dopant-dependent bandgap narrowing for accurate device simulation in abrupt HBTs

    Institute of Scientific and Technical Information of China (English)

    Zhou Shouli; Xiong Deping; Qin Yali

    2009-01-01

    Heavy doping of the base in HBTs brings about a bandgap narrowing(BGN)effect,which modifies the intrinsic carrier density and disturbs the band offset,and thus leads to the change of the currents.Based on a thermionic-field-diffusion model that is used to the analyze the performance of all abrupt HBT with a heavydoped base,the conclusion is made that,although the BGN effect makes the currents obviously change due to the modification of the intrinsic carrier density,the band offsets disturbed by the BGN effect should also be taken into account in the analysis of the electrical characteristics of abrupt HBTs.In addition,the BGN effect changes the bias voltage for the onset of Kirk effects.

  5. Infiltrated microstructured fibers as tunable and nonlinear optical devices

    DEFF Research Database (Denmark)

    Rosberg, Christian Romer; Bennet, Francis; Neshev, Dragomir N.;

    We study the light guiding properties of microstructured optical fibers infiltrated with nonlinear liquids and demonstrate their applicability for spatial beam control in novel type tunable and nonlinear optical devices.......We study the light guiding properties of microstructured optical fibers infiltrated with nonlinear liquids and demonstrate their applicability for spatial beam control in novel type tunable and nonlinear optical devices....

  6. A novel electro-thermal model for wide bandgap semiconductor based devices

    DEFF Research Database (Denmark)

    Sintamarean, Nicolae Christian; Blaabjerg, Frede; Wang, Huai

    2013-01-01

    This paper propose a novel Electro-Thermal Model for the new generation of power electronics WBG-devices (by considering the SiC MOSFET-CMF20120D from CREE), which is able to estimate the device junction and case temperature. The Device-Model estimates the voltage drop and the switching energies...... by considering the device current, the off-state blocking voltage and junction temperature variation. Moreover, the proposed Thermal-Model is able to consider the thermal coupling within the MOSFET and its freewheeling diode, integrated into the same package, and the influence of the ambient temperature...... variation. The importance of temperature loop feedback in the estimation accuracy of device junction and case temperature is studied. Furthermore, the Safe Operating Area (SOA) of the SiC MOSFET is determined for 2L-VSI applications which are using sinusoidal PWM. Thus, by considering the heatsink thermal...

  7. Photonic crystal fibers, devices, and applications

    Institute of Scientific and Technical Information of China (English)

    Wei JIN; Jian JU; Hoi Lut HO; Yeuk Lai HOO; Ailing ZHANG

    2013-01-01

    This paper reviews different types of air-silica photonic crystal fibers (PCFs), discusses their novel properties, and reports recent advances in PCF components and sensors as well as techniques for splicing PCFs to standard telecomm fibers.

  8. Efficient fiber-optical interface for nanophotonic devices

    CERN Document Server

    Tiecke, T G; Thompson, J D; Peyronel, T; de Leon, N P; Vuletić, V; Lukin, M D

    2014-01-01

    We demonstrate a method for efficient coupling of guided light from a single mode optical fiber to nanophotonic devices. Our approach makes use of single-sided conical tapered optical fibers that are evanescently coupled over the last ~10 um to a nanophotonic waveguide. By means of adiabatic mode transfer using a properly chosen taper, single-mode fiber-waveguide coupling efficiencies as high as 97(1)% are achieved. Efficient coupling is obtained for a wide range of device geometries which are either singly-clamped on a chip or attached to the fiber, demonstrating a promising approach for integrated nanophotonic circuits, quantum optical and nanoscale sensing applications.

  9. Optical fiber-based devices and applications

    Institute of Scientific and Technical Information of China (English)

    Perry Ping SHUM; Jonathan C. KNIGHT; Jesper LAEGSGAARD; Dora Juan Juan HU

    2010-01-01

    @@ Optical fiber technology has undergone tremendous growth and development over the last 40 years. Optical fibers constitute an information super highway and are vital in enabling the proliferating use of the Internet. Optical fiber is also an enabling technology which can find applications in sensing, imaging, biomedical, machining, etc. There have been a few milestones in the advancement of optical fiber technology. Firstly, the invention and development of the laser some 50 years ago made optical communications possible. Secondly, the fabrication of low-loss optical fibers has been a key element to the success of optical communication.

  10. Investigation of High-Nonlinearity Glass Fibers for Potential Applications in Ultrafast Nonlinear Fiber Devices

    OpenAIRE

    Kim, Jong-Kook

    2005-01-01

    Nonlinear fiber devices have been attracting considerable attention in recent years, due to their inherent ultrafast response time and potential applications in optical communication systems. They usually require long fibers to generate sufficient nonlinear phase shifts, since nonlinearities of conventional silica-core silica-clad fibers are too low. These long devices, however, cause the serious problems of pulse walk-off, pulse broadening, and polarization fluctuation which are major limiti...

  11. Fiber-shaped energy harvesting and storage devices

    CERN Document Server

    Peng, Huisheng

    2015-01-01

    This comprehensive book covers flexible fiber-shaped devices in the area of energy conversion and storage. The first part of the book introduces recently developed materials, particularly, various nanomaterials and composite materials based on nanostructured carbon such as carbon nanotubes and graphene, metals and polymers for the construction of fiber electrodes. The second part of the book focuses on two typical twisted and coaxial architectures of fiber-shaped devices for energy conversion and storage. The emphasis is placed on dye-sensitized solar cells, polymer solar cells, lithium-ion b

  12. Terahertz Fibres and Functional FibreI-Based Devices

    DEFF Research Database (Denmark)

    Bao, Hualong

    on using such systems. Consequently, it is in urgent need to develop waveguides/devices, similar with the fiber waveguides in infrared region, in THz region, which holds great promise for driving this technology further. In this thesis, we have investigated several different dielectric waveguides....../devices that rely on different waveguiding mechanisms to guide THz radiation. We first focus on Photonic bandgap gap (PBG) THz fibers. To overcome the fabrication problems of traditional PBG type fibers, which caused by the imbalance of hole dimensions, we investigate a novel porous-core honeycomb bandgap type THz...... fiber. The fabrication and experimental characterization of such a PBG THz fiber are also performed. The fiber is made of polymer TOPAS and confirm that it allows to fabricate long lengths of fiber with a nearperfect periodic structure and thus very clear bandgap guidance. The fundamental bandgap at 0...

  13. A 5-mm piezo-scanning fiber device for high speed ultrafast laser microsurgery.

    Science.gov (United States)

    Ferhanoglu, Onur; Yildirim, Murat; Subramanian, Kaushik; Ben-Yakar, Adela

    2014-07-01

    Towards developing precise microsurgery tools for the clinic, we previously developed image-guided miniaturized devices using low repetition rate amplified ultrafast lasers for surgery. To improve the speed of tissue removal while reducing device diameter, here we present a new 5-mm diameter device that delivers high-repetition rate laser pulses for high speed ultrafast laser microsurgery. The device consists of an air-core photonic bandgap fiber (PBF) for the delivery of high energy pulses, a piezoelectric tube actuator for fiber scanning, and two aspheric lenses for focusing the light. Its inline optical architecture provides easy alignment and substantial size reduction to 5 mm diameter as compared to our previous MEMS-scanning devices while realizing improved intensity squared (two-photon) lateral and axial resolutions of 1.16 μm and 11.46 μm, respectively. Our study also sheds light on the maximum pulse energies that can be delivered through the air-core PBF and identifies cladding damage at the input facet of the fiber as the limiting factor. We have achieved a maximum energy delivery larger than 700 nJ at 92% coupling efficiency. An in depth analysis reveals how this value is greatly affected by possible slight misalignments of the beam during coupling and the measured small beam pointing fluctuations. In the absence of these imperfections, self-phase modulation becomes the limiting factor for the maximum energy delivery, setting the theoretical upper bound to near 2 μJ for a 1-m long, 7-μm, air-core PBF. Finally, the use of a 300 kHz repetition rate fiber laser enabled rapid ablation of 150 µm x 150 µm area within only 50 ms. Such ablation speeds can now allow the surgeons to translate the surgery device as fast as ~4 mm/s to continuously remove a thin layer of a 150 µm wide tissue. Thanks to a high optical transmission efficiency of the in-line optical architecture of the device and improved resolution, we could successfully perform ablation of

  14. Silica optical fiber technology for devices and components design, fabrication, and international standards

    CERN Document Server

    Oh, Kyunghwan

    2012-01-01

    From basic physics to new products, Silica Optical Fiber Technology for Device and Components examines all aspects of specialty optical fibers. Moreover, the inclusion of the latest international standards governing optical fibers enables you to move from research to fabrication to commercialization. Reviews all the latest specialty optical fiber technologies, including those developed for high capacity WDM applications; broadband fiber amplifiers; fiber filleters based on periodic coupling; fiber branching devices; and fiber terminations Discusses key differences among sing

  15. The Challenge of Producing Fiber-Based Organic Electronic Devices

    Directory of Open Access Journals (Sweden)

    Tobias Könyves-Toth

    2014-07-01

    Full Text Available The implementation of organic electronic devices on fibers is a challenging task, not yet investigated in detail. As was shown earlier, a direct transition from a flat device structure to a fiber substrate is in principle possible. However, a more detailed investigation of the process reveals additional complexities than just the transition in geometry. It will be shown, that the layer formation of evaporated materials behaves differently due to the multi-angled incidence on the fibers surface. In order to achieve homogenous layers the evaporation process has to be adapted. Additionally, the fiber geometry itself facilitates damaging of its surface due to mechanical impact and leads to a high surface roughness, thereby often hindering commercial fibers to be used as substrates. In this article, a treatment of commercial polymer-coated glass fibers will be demonstrated that allows for the fabrication of rather flexible organic light-emitting diodes (OLEDs with cylindrical emission characteristics. Since OLEDs rely the most on a smooth substrate, fibers undergoing the proposed treatment are applicable for other organic electronic devices such as transistors and solar cells. Finally, the technique also supports the future fabrication of organic electronics not only in smart textiles and woven electronics but also in bent surfaces, which opens a wide range of applications.

  16. Use of fiber helical coils to obtain polarization insensitive fiber devices

    Science.gov (United States)

    Tentori, Diana; Garcia-Weidner, A.; Rodriguez-Garcia, J. A.

    2016-09-01

    Using a new model for the description of the birefringence of a helical coil, it is shown that the birefringence effect on the signal polarization introduced by a fiber device can be canceled out by introducing two helical coils at the required orientation. Experimental results obtained using this modification in a polarization insensitive device (optical isolator) and in a non-polarization insensitive device working at two different wavelengths (wavelength division multiplexer) are presented and discussed. Such modified devices were used in the construction of an erbium-doped fiber amplifier (EDFA) with a full control of the input signal and pump states of polarization.

  17. Low index-contrast aperiodically ordered photonic quasicrystals for the development of isotropic photonic band-gap devices

    Science.gov (United States)

    Priya Rose, T.; Di Gennaro, E.; Andreone, A.; Abbate, G.

    2010-05-01

    Photonic quasicrystals (PQCs) have neither true periodicity nor translational symmetry, however they can exhibit symmetries that are not achievable by conventional periodic structures. The arbitrarily high rotational symmetry of these materials can be practically exploited to manufacture isotropic band gap materials, which are perfectly suitable for hosting waveguides or cavities. In this work, formation and development of the photonic bandgap (PBG) in twodimensional 8-, 10- and 12-fold symmetry quasicrystalline lattices of low dielectric contrast (0.4-0.6) were measured in the microwave region and compared with the PBG properties of a conventional hexagonal crystal. Band-gap properties were also investigated by changing the direction of propagation of the incident beam inside the crystal. Various angles of incidence from 0° to 30° were used in order to investigate the isotropic nature of the band-gap.

  18. An integrated fiber and stone basket device for use in Thulium fiber laser lithotripsy

    Science.gov (United States)

    Wilson, Christopher R.; Hutchens, Thomas C.; Hardy, Luke A.; Irby, Pierce B.; Fried, Nathaniel M.

    2014-03-01

    The Thulium fiber laser (TFL) is being explored as an alternative laser lithotripter to the Holmium:YAG laser. The TFL's superior near-single mode beam profile enables higher power transmission through smaller fibers with reduced proximal fiber tip damage. Recent studies have also reported that attaching hollow steel tubing to the distal fiber tip decreases fiber degradation and burn-back without compromising stone ablation rates. However, significant stone retropulsion was observed, which increased with pulse rate. In this study, the hollow steel tip fiber design was integrated with a stone basket to minimize stone retropulsion during ablation. A device was constructed consisting of a 100-μm-core, 140-μm-OD silica fiber outfitted with 5-mm-long stainless steel tubing at the distal tip, and integrated with a 1.3-Fr (0.433-mm-OD) disposable nitinol wire basket, to form an overall 1.9-Fr (0.633-mm- OD) integrated device. This compact design may provide several potential advantages including increased flexibility, higher saline irrigation rates through the ureteroscope working channel, and reduced fiber tip degradation compared to separate fiber and stone basket manipulation. TFL pulse energy of 31.5 mJ with 500 μs pulse duration and pulse rate of 500 Hz was delivered through the integrated fiber/basket device in contact with human uric acid stones, ex vivo. TFL stone ablation rates measured 1.5 +/- 0.2 mg/s, comparable to 1.7 +/- 0.3 mg/s (P > 0.05) using standard bare fiber tips separately with a stone basket. With further development, this device may be useful for minimizing stone retropulsion, thus enabling more efficient TFL lithotripsy at higher pulse rates.

  19. Cold fiber solid-phase microextraction device based on thermoelectric cooling of metal fiber.

    Science.gov (United States)

    Haddadi, Shokouh Hosseinzadeh; Pawliszyn, Janusz

    2009-04-01

    A new cold fiber solid-phase microextraction device was designed and constructed based on thermoelectric cooling. A three-stage thermoelectric cooler (TEC) was used for cooling a copper rod coated with a poly(dimethylsiloxane) (PDMS) hollow fiber, which served as the solid-phase microextraction (SPME) fiber. The copper rod was mounted on a commercial SPME plunger and exposed to the cold surface of the TEC, which was enclosed in a small aluminum box. A heat sink and a fan were used to dissipate the generated heat at the hot side of the TEC. By applying an appropriate dc voltage to the TEC, the upper part of the copper rod, which was in contact to the cold side of the TEC, was cooled and the hollow fiber reached a lower temperature through heat transfer. A thermocouple was embedded in the cold side of the TEC for indirect measurement of the fiber temperature. The device was applied in quantitative analysis of off-flavors in a rice sample. Hexanal, nonanal, and undecanal were chosen as three off-flavors in rice. They were identified according to their retention times and analyzed by GC-flame ionization detection instrument. Headspace extraction conditions (i.e., temperature and time) were optimized. Standard addition calibration graphs were obtained at the optimized conditions and the concentrations of the three analytes were calculated. The concentration of hexanal was also measured using a conventional solvent extraction method (697+/-143ng/g) which was comparable to that obtained from the cold fiber SPME method (644+/-8). Moreover, the cold fiber SPME resulted in better reproducibility and shorter analysis time. Cold fiber SPME with TEC device can also be used as a portable device for field sampling.

  20. 太赫兹双芯光子带隙光纤定向耦合器%Terahertz dual-core photonic band-gap fiber directional coupler

    Institute of Scientific and Technical Information of China (English)

    白晋军; 王昌辉; 侯宇; 范飞; 常胜江

    2012-01-01

    提出了一种低损耗、宽频段太赫兹双芯光子带隙光纤定向耦合器,光纤的包层由亚波长尺度呈三角晶格排列的空气孔组成,两个纤芯分别由去掉7个空气孔构成.利用全矢量有限元法对光纤的色散、耦合特性以及损耗特性进行了理论分析.研究表明,这种耦合器的损耗系数小于0.021cm^-1更重要的是可以实现0.14THz范围内的宽频定向耦合.这种定向耦合器在太赫兹通信系统中滤波、波分复用、偏振分离和开关等技术中有潜在的应用价值.%A low-loss and broadband terahertz twin-core photonic band-gap fiber directional coupler is proposed, which consists of a cladding with a triangular lattice array of sub-wavelength air rods and two cores formed respectively by omitting seven nearby air rods. The group veIocity dispersion, the coupling and the loss of the fibers are investigated by using a full-vector finite element method. The numerical simulations show that the loss coefficient of the coupler is less than 0.021 cm^-1, and the coupling broadband of 0.14 THz can be realized. The directional coupler has potential applications in terahertz communication systems, such as filtering, wavelength-division multiplexing, polarization isolation, switching and so on.

  1. Characterization of the stress and refractive-index distributions in optical fibers and fiber-based devices

    Science.gov (United States)

    Hutsel, Michael R.

    2011-07-01

    Optical fiber technology continues to advance rapidly as a result of the increasing demands on communication systems and the expanding use of fiber-based sensing. New optical fiber types and fiber-based communications components are required to permit higher data rates, an increased number of channels, and more flexible installation requirements. Fiber-based sensors are continually being developed for a broad range of sensing applications, including environmental, medical, structural, industrial, and military. As optical fibers and fiber-based devices continue to advance, the need to understand their fundamental physical properties increases. The residual-stress distribution (RSD) and the refractive-index distribution (RID) play fundamental roles in the operation and performance of optical fibers. Custom RIDs are used to tailor the transmission properties of fibers used for long-distance transmission and to enable fiber-based devices such as long-period fiber gratings (LPFGs). The introduction and modification of RSDs enable specialty fibers, such as polarization-maintaining fiber, and contribute to the operation of fiber-based devices. Furthermore, the RSD and the RID are inherently linked through the photoelastic effect. Therefore, both the RSD and the RID need to be characterized because these fundamental properties are coupled and affect the fabrication, operation, and performance of fibers and fiber-based devices. To characterize effectively the physical properties of optical fibers, the RSD and the RID must be measured without perturbing or destroying the optical fiber. Furthermore, the techniques used must not be limited in detecting small variations and asymmetries in all directions through the fiber. Finally, the RSD and the RID must be characterized concurrently without moving the fiber to enable the analysis of the relationship between the RSD and the RID. Although many techniques exist for characterizing the residual stress and the refractive index in

  2. Design of a Polymer-Based Hollow-Core Bandgap Fiber for Low-Loss Terahertz Transmission

    DEFF Research Database (Denmark)

    Barh, Ajanta; Varshney, Ravi K.; Pal, Bishnu P.;

    2016-01-01

    We use numerical simulations to design a hollow-core microstructured polymer optical fiber (HC-mPOF) suitable for broadband, terahertz (THz) pulse transmission with relatively low losses and small dispersion. The HC-mPOF consists of a central large air-core surrounded by periodically arranged...... of non-zero values of the longitudinal wavevector. We have achieved PBG over a broad spectral range (bandwidth similar to 400 GHz) ranging from 1.65 to 2.05 THz in the proposed HC-mPOF. The achievable loss coefficient in our designed HC-mPOF is...

  3. Characterization of the stress and refractive-index distributions in optical fibers and fiber-based devices

    Science.gov (United States)

    Hutsel, Michael R.

    2011-07-01

    Optical fiber technology continues to advance rapidly as a result of the increasing demands on communication systems and the expanding use of fiber-based sensing. New optical fiber types and fiber-based communications components are required to permit higher data rates, an increased number of channels, and more flexible installation requirements. Fiber-based sensors are continually being developed for a broad range of sensing applications, including environmental, medical, structural, industrial, and military. As optical fibers and fiber-based devices continue to advance, the need to understand their fundamental physical properties increases. The residual-stress distribution (RSD) and the refractive-index distribution (RID) play fundamental roles in the operation and performance of optical fibers. Custom RIDs are used to tailor the transmission properties of fibers used for long-distance transmission and to enable fiber-based devices such as long-period fiber gratings (LPFGs). The introduction and modification of RSDs enable specialty fibers, such as polarization-maintaining fiber, and contribute to the operation of fiber-based devices. Furthermore, the RSD and the RID are inherently linked through the photoelastic effect. Therefore, both the RSD and the RID need to be characterized because these fundamental properties are coupled and affect the fabrication, operation, and performance of fibers and fiber-based devices. To characterize effectively the physical properties of optical fibers, the RSD and the RID must be measured without perturbing or destroying the optical fiber. Furthermore, the techniques used must not be limited in detecting small variations and asymmetries in all directions through the fiber. Finally, the RSD and the RID must be characterized concurrently without moving the fiber to enable the analysis of the relationship between the RSD and the RID. Although many techniques exist for characterizing the residual stress and the refractive index in

  4. Active fiber optic technologies used as tamper-indicating devices

    International Nuclear Information System (INIS)

    The Sandia National Laboratories (SNL) Safeguards and Seals Evaluation Program is evaluating new fiber optic active seal technologies for use at Department of Energy (DOE) facilities. The goal of the program is to investigate active seal technologies that can monitor secured containers storing special nuclear materials (SNM) within DOE vaults. Specifically investigated were active seal technologies that can be used as tamper-indicating devices to monitor secured containers within vaults while personnel remain outside the vault area. Such a system would allow minimal access into vaults while ensuring container content accountability. The purpose of this report is to discuss tamper-indicating devices that were evaluated for possible DOE use. While previous seal evaluations (Phase I and II) considered overall facility applications, this discussion focuses specifically on their use in vault storage situations. The report will highlight general background information, specifications and requirements, and test procedures. Also discussed are the systems available from four manufacturers: Interactive Technologies, Inc., Fiber SenSys, Inc., Inovonics, Inc., and Valve Security Systems

  5. Active fiber optic technologies used as tamper-indicating devices

    Energy Technology Data Exchange (ETDEWEB)

    Horton, P.R.V.; Waddoups, I.G.

    1995-11-01

    The Sandia National Laboratories (SNL) Safeguards and Seals Evaluation Program is evaluating new fiber optic active seal technologies for use at Department of Energy (DOE) facilities. The goal of the program is to investigate active seal technologies that can monitor secured containers storing special nuclear materials (SNM) within DOE vaults. Specifically investigated were active seal technologies that can be used as tamper-indicating devices to monitor secured containers within vaults while personnel remain outside the vault area. Such a system would allow minimal access into vaults while ensuring container content accountability. The purpose of this report is to discuss tamper-indicating devices that were evaluated for possible DOE use. While previous seal evaluations (Phase I and II) considered overall facility applications, this discussion focuses specifically on their use in vault storage situations. The report will highlight general background information, specifications and requirements, and test procedures. Also discussed are the systems available from four manufacturers: Interactive Technologies, Inc., Fiber SenSys, Inc., Inovonics, Inc., and Valve Security Systems.

  6. Identifying the Electronic Properties Relevant to Improving the Performance of High Band-Gap Copper Based I-III-VI2 Chalcopyrite Thin Film Photovoltaic Devices: Final Subcontract Report, 27 April 2004-15 September 2007

    Energy Technology Data Exchange (ETDEWEB)

    Cohen, J. D.

    2008-08-01

    This report summarizes the development and evaluation of higher-bandgap absorbers in the CIS alloy system. The major effort focused on exploring suitable absorbers with significant sulfur alloying in collaboration with Shafarman's group at the Institute of Energy Conversion. Three series of samples were examined; first, a series of quaternary CuIn(SeS)2-based devices without Ga; second, a series of devices with pentenary Cu(InGa)(SeS)2 absorbers in which the Se-to-S and In-to-Ga ratios were chosen to keep the bandgap nearly constant, near 1.52 eV. Third, based on the most-promising samples in those two series, we examined a series of devices with pentenary Cu(InGa)(SeS)2 absorbers with roughly 25 at.% S/(Se+S) ratios and varying Ga fractions. We also characterized electronic properties of several wide-bandgap CuGaSe2 devices from both IEC and NREL. The electronic properties of these absorbers were examined using admittance spectroscopy, drive-level capacitance profiling, transient photocapacitance, and transient photocurrent optical spectroscopies. The sample devices whose absorbers had Ga fraction below 40 at.% and S fractions above 20 at.% but below 40% exhibited the best electronic properties and device performance.

  7. Wide-Bandgap CIAS Thin-film Photovoltaics with Transparent Back Contacts for Next-Generation Single and Multijunction Devices

    Science.gov (United States)

    Woods, Lawrence M.; Kalla, Ajay; Gonzalez, Damian; Ribelin, Rosine

    2005-01-01

    Future spacecraft and high-altitude airship (HAA) technologies will require high array specific power (W/kg), which can be met using thin-film photovoltaics (PV) on lightweight and flexible substrates. It has been calculated that the thin-film array technology, including the array support structure, begins to exceed the specific power of crystalline multi-junction arrays when the thin-film device efficiencies begin to exceed 12%. Thin-film PV devices have other advantages in that they are more easily integrated into HAA s, and are projected to be much less costly than their crystalline PV counterparts. Furthermore, it is likely that only thin-film array technology will be able to meet device specific power requirements exceeding 1 kW/kg (photovoltaic and integrated substrate/blanket mass only). Of the various thin-film technologies, single junction and radiation resistant CuInSe2 (CIS) and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of thin-film device performance, with the best efficiency, reaching 19.2% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys could achieve the highest levels of thin-film space and HAA solar array performance.

  8. Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors

    Science.gov (United States)

    Ryou, Junga; Kim, Yong-Sung; KC, Santosh; Cho, Kyeongjae

    2016-01-01

    Semiconductors with a moderate bandgap have enabled modern electronic device technology, and the current scaling trends down to nanometer scale have introduced two-dimensional (2D) semiconductors. The bandgap of a semiconductor has been an intrinsic property independent of the environments and determined fundamental semiconductor device characteristics. In contrast to bulk semiconductors, we demonstrate that an atomically thin two-dimensional semiconductor has a bandgap with strong dependence on dielectric environments. Specifically, monolayer MoS2 bandgap is shown to change from 2.8 eV to 1.9 eV by dielectric environment. Utilizing the bandgap modulation property, a tunable bandgap transistor, which can be in general made of a two-dimensional semiconductor, is proposed. PMID:27378032

  9. Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors.

    Science.gov (United States)

    Ryou, Junga; Kim, Yong-Sung; Kc, Santosh; Cho, Kyeongjae

    2016-01-01

    Semiconductors with a moderate bandgap have enabled modern electronic device technology, and the current scaling trends down to nanometer scale have introduced two-dimensional (2D) semiconductors. The bandgap of a semiconductor has been an intrinsic property independent of the environments and determined fundamental semiconductor device characteristics. In contrast to bulk semiconductors, we demonstrate that an atomically thin two-dimensional semiconductor has a bandgap with strong dependence on dielectric environments. Specifically, monolayer MoS2 bandgap is shown to change from 2.8 eV to 1.9 eV by dielectric environment. Utilizing the bandgap modulation property, a tunable bandgap transistor, which can be in general made of a two-dimensional semiconductor, is proposed. PMID:27378032

  10. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

    2012-01-20

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  11. Two-Dimensional Fiber Positioning and Clamping Device for Product-Internal Microassembly

    NARCIS (Netherlands)

    Henneken, V.A.; Sassen, W.P.; Van der Vlist, W.; Wien, W.H.A.; Tichem, M.; Sarro, P.M.

    2008-01-01

    In this paper, we present a microelectromechanical systems-based two-degrees-of-freedom positioning device combined with a clamping structure for positioning and constraining an optical fiber. The fiber position can be controlled in the two directions perpendicular to the fiber axis using two specif

  12. Suppressing sub-bandgap phonon-polariton heat transfer in near-field thermophotovoltaic devices for waste heat recovery

    Science.gov (United States)

    Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui

    2015-08-01

    We consider a near-field thermophotovoltaic device with metal as the emitter and semiconductor as the photovoltaic cell. We show that when the cell is a III-V semiconductor, such as GaSb, parasitic phonon-polariton heat transfer reduces efficiency in the near-field regime, especially when the temperature of the emitter is not high enough. We further propose ways to avoid the phonon-polariton heat transfer by replacing the III-V semiconductor with a non-polar semiconductor such as Ge. Our work provides practical guidance on the design of near-field thermophotovoltaic systems for efficient harvesting of low-quality waste heat.

  13. Flexible fiber energy storage and integrated devices: recent progress and perspectives

    OpenAIRE

    Xianfu Wang; Kai Jiang; Guozhen Shen

    2015-01-01

    Flexible fiber-shaped energy storage devices have been studied and developed intensively over the past few years to meet the demands of modern electronics in terms of flexibility, weavability and being lightweight. In this review, fiber electrodes and flexible fiber energy storage devices containing solid-state supercapacitors (SCs) and lithium-ion batteries (LIBs) are carefully summarized with particular emphasis on their electrode fabrication, structure design and flexibility. In addition, ...

  14. Wide-Bandgap Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Chinthavali, M.S.

    2005-11-22

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters

  15. Novel fiber optic tip designs and devices for laser surgery

    Science.gov (United States)

    Hutchens, Thomas Clifton

    Fiber optic delivery of laser energy has been used for years in various types of surgical procedures in the human body. Optical energy provides several benefits over electrical or mechanical surgery, including the ability to selectively target specific tissue types while preserving others. Specialty fiber optic tips have also been introduced to further customize delivery of laser energy to the tissue. Recent evolution in lasers and miniaturization has opened up opportunities for many novel surgical techniques. Currently, ophthalmic surgeons use relatively invasive mechanical tools to dissect retinal deposits which occur in proliferative diabetic retinopathy. By using the tight focusing properties of microspheres combined with the short optical penetration depth of the Erbium:YAG laser and mid-IR fiber delivery, a precise laser scalpel can be constructed as an alternative, less invasive and more precise approach to this surgery. Chains of microspheres may allow for a self limiting ablation depth of approximately 10 microm based on the defocusing of paraxial rays. The microsphere laser scalpel may also be integrated with other surgical instruments to reduce the total number of handpieces for the surgeon. In current clinical laser lithotripsy procedures, poor input coupling of the Holmium:YAG laser energy frequently damages and requires discarding of the optical fiber. However, recent stone ablation studies with the Thulium fiber laser have provided comparable results to the Ho:YAG laser. The improved spatial beam profile of the Thulium fiber laser can also be efficiently coupled into a fiber approximately one third the diameter and reduces the risk of damaging the fiber input. For this reason, the trunk optical fiber minus the distal fiber tip can be preserved between procedures. The distal fiber tip, which degrades during stone ablation, could be made detachable and disposable. A novel, low-profile, twist-locking, detachable distal fiber tip interface was designed

  16. Modifying Poly(Vinyl Alcohol) (PVA) from Insulator to Small-Bandgap Polymer: A Novel Approach for Organic Solar Cells and Optoelectronic Devices

    Science.gov (United States)

    Aziz, Shujahadeen B.

    2016-01-01

    An innovative method has been used to reduce the bandgap of poly(vinyl alcohol) (PVA) polymer by addition of a nontoxic, inexpensive, and environmentally friendly material. The resulting materials are small-bandgap polymers, hence opening new frontiers in green chemistry. The doped PVA films showed a wide range of light absorption of the solar spectrum from 200 nm to above 800 nm. Nonsharp absorption behavior versus wavelength was observed for the samples. The refractive index exhibited a wide range of dispersion. Shift of the absorption edge from 6.2 eV to 1.5 eV was observed. The energy bandgap of PVA was diminished to 1.85 eV upon addition of black tea extract solution, lying in the range of small-bandgap polymers. Increase of the optical dielectric constant was observed with increasing tea solution addition. The results indicate that small-bandgap PVA with good film-forming ability could be useful in terms of cost-performance tradeoff, solving problems of short lifetime, cost, and flexibility associated with conjugated polymers. The decrease of the Urbach energy upon addition of black tea extract solution indicates modification of PVA from a disordered to ordered material. X-ray diffraction results confirm an increase of the crystalline fraction in the doped samples.

  17. Flexible fiber energy storage and integrated devices: recent progress and perspectives

    Directory of Open Access Journals (Sweden)

    Xianfu Wang

    2015-06-01

    Full Text Available Flexible fiber-shaped energy storage devices have been studied and developed intensively over the past few years to meet the demands of modern electronics in terms of flexibility, weavability and being lightweight. In this review, fiber electrodes and flexible fiber energy storage devices containing solid-state supercapacitors (SCs and lithium-ion batteries (LIBs are carefully summarized with particular emphasis on their electrode fabrication, structure design and flexibility. In addition, emerging wire-shaped integrated energy systems, combined energy storage and solar cells, as well as other electronic devices to realize self-charging and self-powered integrated systems are specifically highlighted.

  18. Photolithography of thick photoresist coating in anisotropically etched V-grooves for electrically controlled liquid crystal photonic bandgap fiber devices

    DEFF Research Database (Denmark)

    Wei, Lei; Khomtchenko, Elena; Alkeskjold, Thomas Tanggaard;

    2009-01-01

    Thick photoresist coating for electrode patterning in anisotropically etched v-grooves is investigated. The photoresist coverage is compared with and without soft baking. Two-step exposure is applied for a complete exposure and minimizing the resolution loss.......Thick photoresist coating for electrode patterning in anisotropically etched v-grooves is investigated. The photoresist coverage is compared with and without soft baking. Two-step exposure is applied for a complete exposure and minimizing the resolution loss....

  19. Properties of fiber composites for advanced flywheel energy storage devices

    Energy Technology Data Exchange (ETDEWEB)

    DeTeresa, S J; Groves, S E

    2001-01-12

    The performance of commercial high-performance fibers is examined for application to flywheel power supplies. It is shown that actual delivered performance depends on multiple factors such as inherent fiber strength, strength translation and stress-rupture lifetime. Experimental results for recent stress-rupture studies of carbon fibers will be presented and compared with other candidate reinforcement materials. Based on an evaluation of all of the performance factors, it is concluded that carbon fibers are preferred for highest performance and E-glass fibers for lowest cost. The inferior performance of the low-cost E-glass fibers can be improved to some extent by retarding the stress-corrosion of the material due to moisture and practical approaches to mitigating this corrosion are discussed. Many flywheel designs are limited not by fiber failure, but by matrix-dominated failure modes. Unfortunately, very few experimental results for stress-rupture under transverse tensile loading are available. As a consequence, significant efforts are made in flywheel design to avoid generating any transverse tensile stresses. Recent results for stress-rupture of a carbon fiber/epoxy composite under transverse tensile load reveal that these materials are surprisingly durable under the transverse loading condition and that some radial tensile stress could be tolerated in flywheel applications.

  20. Miniature micro-wire based optical fiber-field access device.

    Science.gov (United States)

    Pevec, Simon; Donlagic, Denis

    2012-12-01

    This paper presents an optical fiber-field access device suitable for use in different in-line fiber-optics' systems and fiber-based photonics' components. The proposed device utilizes a thin silica micro-wire positioned in-between two lead-in single mode fibers. The thin micro-wire acts as a waveguide that allows for low-loss interconnection between both lead-in fibers, while providing interaction between the guided optical field and the surrounding medium or other photonic structures. The field interaction strength, total loss, and phase matching conditions can be partially controlled by device-design. The presented all-fiber device is miniature in size and utilizes an all-silica construction. It has mechanical properties suitable for handling and packaging without the need for additional mechanical support or reinforcements. The proposed device was produced using a micromachining method that utilizes selective etching of a purposely-produced phosphorus pentoxide-doped optical fiber. This method is simple, compatible with batch processes, and has good high-volume manufacturing potential. PMID:23262732

  1. Fiber-based wearable electronics: a review of materials, fabrication, devices, and applications.

    Science.gov (United States)

    Zeng, Wei; Shu, Lin; Li, Qiao; Chen, Song; Wang, Fei; Tao, Xiao-Ming

    2014-08-20

    Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable. Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions. The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns. However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation. This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products. In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices. Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption.

  2. Nanostructure Core Fiber With Enhanced Performances: Design, Fabrication and Devices

    DEFF Research Database (Denmark)

    Yu, X.; Yan, Min; Ren, G.B.;

    2009-01-01

    We report a new type of silica-based all-solid fiber with a 2-D nanostructure core. The nanostructure core fiber (NCF) is formed by a 2-D array of high-index rods of sub-wavelength dimensions. We theoretically study the birefringence property of such fibers over a large wavelength range. Large......-mode-area (LMA) structure with a typical high birefringence in the order of 10(-4) can be easily realized. The attenuation of the fabricated NCF is as low as 3.5 dB/km at 1550 nm. Higher macro- and micro-bending losses compared with those of the single-mode fiber (SMF) due to the reduced index difference have...... been observed experimentally, which suggests that the NCF is potentially useful for curvature and strain sensing applications. A fiber Bragg grating (FBG) inscribed in such a novel fiber is side-polished to make use of its evanescent field for refractive index sensing. The refractive index sensitivity...

  3. Research progress in the key device and technology for fiber optic sensor network

    Science.gov (United States)

    Liu, Deming; Sun, Qizhen; Lu, Ping; Xia, Li; Sima, Chaotan

    2016-03-01

    The recent research progress in the key device and technology of the fiber optic sensor network (FOSN) is introduced in this paper. An architecture of the sensor optical passive network (SPON), by employing hybrid wavelength division multiplexing/time division multiplexing (WDM/TDM) techniques similar to the fiber communication passive optical network (PON), is proposed. The network topology scheme of a hybrid TDM/WDM/FDM (frequency division multiplexing) three-dimension fiber optic sensing system for achieving ultra-large capacity, long distance, and high resolution sensing performance is performed and analyzed. As the most important device of the FOSN, several kinds of light source are developed, including the wideband multi-wavelength fiber laser operating at C band, switchable and tunable 2 μm multi-wavelength fiber lasers, ultra-fast mode-locked fiber laser, as well as the optical wideband chaos source, which have very good application prospects in the FOSN. Meanwhile, intelligent management techniques for the FOSN including wideband spectrum demodulation of the sensing signals and real-time fault monitoring of fiber links are presented. Moreover, several typical applications of the FOSN are also discussed, such as the fiber optic gas sensing network, fiber optic acoustic sensing network, and strain/dynamic strain sensing network.

  4. Aberrations of GRIN-rod lenses in multimode optical fiber devices.

    Science.gov (United States)

    Tomlinson, W J

    1980-04-01

    The aberrations of graded-refractive-index-rod lenses (GRIN-rod lenses) are analyzed, with particular emphasis on the characteristics and parameter ranges of interest for various multimode optical fiber devices. Ray-tracing calculations are used to present a visual display of the image quality of particular lenses, and aberration theories are used to interpret and to extrapolate those results. Very simple general expressions are developed for the insertion losses of fiber devices as a function of the relevant lens parameters. PMID:20220996

  5. Fiber - Optic Devices as Temperature Sensors for Temperature Measurements in AC Magnetic Fields

    Science.gov (United States)

    Rablau, Corneliu; Lafrance, Joseph; Sala, Anca

    2007-10-01

    We report on the investigation of several fiber-optic devices as potential sensors for temperature measurements in AC magnetic fields. Common temperature sensors, such as thermocouples, thermistors or diodes, will create random and/or systematic errors when placed in a magnetic field. A DC magnetic field is susceptible to create a systematic offset to the measurement, while in an AC magnetic field of variable frequency random errors which cannot be corrected for can also be introduced. Fiber-Bragg-gratings and thin film filters have an inherent temperature dependence. Detrimental for their primary applications, the same dependence allows one to use such devices as temperature sensors. In an AC magnetic field, they present the advantage of being immune to electromagnetic interference. Moreover, for fiber-Bragg-gratings, the shape factor and small mass of the bare-fiber device make it convenient for temperature measurements on small samples. We studied several thin-film filters and fiber-Bragg-gratings and compared their temperature measurement capabilities in AC magnetic fields of 0 to 150 Gauss, 0 to 20 KHz to the results provided by off-the-shelf thermocouples and thermistor-based temperature measurement systems.

  6. 78 FR 77166 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Science.gov (United States)

    2013-12-20

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Request for Statements on the Public Interest AGENCY: U.S. International...

  7. Analysis of flavor and perfume using an internally cooled coated fiber device.

    Science.gov (United States)

    Chen, Yong; Begnaud, Frédéric; Chaintreau, Alain; Pawliszyn, Janusz

    2007-05-01

    A miniaturized internally cooled coated fiber device was applied for the analysis of flavors and fragrances from various matrices. Its integration with a CTC CombiPAL autosampler enabled high throughput for the analysis of analytes in complex matrices that required simultaneous heating of the matrices and cooling of the fiber coating to achieve high extraction efficiency. It was found that up to ten times increase of extraction efficiencies was observed when the device was used to extract flavor compounds in water, even when limited sample temperatures were used to preserve the integrity of target compounds. The extraction of the flavor compounds in water with the device was reproducible, with RSD not larger than 15%. The lower limits of the linear ranges were in the low ppb range, which was about one order of magnitude smaller than those obtained with the commercialized 100 microm PDMS fibers. Exhaustive extraction of some perfume ingredients from a complex matrix (shampoo) was realized. All achieved recoveries were not less than 80%. The repeatability of the extraction of the perfume compounds from shampoo was better than 10%. The linear ranges were about 1-3000 microg/g, and the LOD was about 0.2-1 microg/g. The automated internally cooled coated fiber device was demonstrated to be a powerful sample preparation tool in flavor and fragrance analysis.

  8. Large-area single-mode photonic bandgap vcsels

    DEFF Research Database (Denmark)

    Birkedal, Dan; Gregersen, N.; Bischoff, S.;

    2003-01-01

    We demonstrate that the photonic bandgap effect can be used to control the modes of large area vertical cavity surface emitting lasers. We obtain more than 20 dB side mode suppression ratios in a 10-micron area device.......We demonstrate that the photonic bandgap effect can be used to control the modes of large area vertical cavity surface emitting lasers. We obtain more than 20 dB side mode suppression ratios in a 10-micron area device....

  9. Hollow-core photonic bandgap fiber sensor for detection of H2S concentration in natural gas%检测天然气中H2S气体浓度的光子带隙光纤传感器

    Institute of Scientific and Technical Information of China (English)

    郎文勇; 代冰; 唐东林

    2013-01-01

    Detection and monitoring of H2S are extremely important,since levels above 10 ppm are considered to be hazardous.Based on differential absorption,a kind of optical fiber gas sensor with high stability and sensitivity is proposed to detect H2S mixed in natural gas.This sensor is advantageous for eliminating the instability of light source and the impact of thermal zero drift and zero shift of photoelectric device.The gas sensing probe of the configuration uses four shorter pieces of hollow-core photonic bandgap fibers (HC-PBFs) with the same overall length instead of one long piece of HC-PBF to improve the system response.By analyzing the experimental data of different concentrations of H2S and CO2 absorption,the detection results of the prototype are as follows:the response time of sensor is 53 s,and the sensitivity is 2×10-6 mol/L.%为消除光源不稳定、光电器件的热零点漂移以及零点漂移对测量准确度的影响,基于差分吸收检测法,设计一种检测天然气中H2S气体浓度的高稳定性、高灵敏度的光子带隙传感器.为提高系统响应,采用4段串联的空芯光子晶体光纤(HC-PBF)作为气体传感探头.对不同组分浓度的H2S和CO2气体进行了检测,结果表明,系统响应时间为53 s,测量灵敏度可达2×10-6mol/L.

  10. Hollow Fiber Membrane Dehumidification Device for Air Conditioning System.

    Science.gov (United States)

    Zhao, Baiwang; Peng, Na; Liang, Canzeng; Yong, Wai Fen; Chung, Tai-Shung

    2015-11-16

    In order to provide a comfortable living and working environment indoors in tropical countries, the outdoor air often needs to be cooled and dehumidified before it enters the rooms. Membrane separation is an emerging technology for air dehumidification and it is based on the solution diffusion mechanism. Water molecules are preferentially permeating through the membranes due to its smaller kinetic diameter and higher condensability than the other gases. Compared to other dehumidification technologies such as direct cooling or desiccation, there is no phase transition involved in membrane dehumidification, neither the contact between the fresh air stream and the desiccants. Hence, membrane dehumidification would not only require less energy consumption but also avoid cross-contamination problems. A pilot scale air dehumidification system is built in this study which comprises nine pieces of one-inch PAN/PDMS hollow fiber membrane modules. A 150 h long-term test shows that the membrane modules has good water vapor transport properties by using a low vacuum force of only 0.78 bar absolute pressure at the lumen side. The water vapor concentration of the feed humid air decreases dramatically from a range of 18-22 g/m³ to a range of 13.5-18.3 g/m³. Most importantly, the total energy saving is up to 26.2% compared with the conventional air conditioning process.

  11. Hollow Fiber Membrane Dehumidification Device for Air Conditioning System

    Directory of Open Access Journals (Sweden)

    Baiwang Zhao

    2015-11-01

    Full Text Available In order to provide a comfortable living and working environment indoors in tropical countries, the outdoor air often needs to be cooled and dehumidified before it enters the rooms. Membrane separation is an emerging technology for air dehumidification and it is based on the solution diffusion mechanism. Water molecules are preferentially permeating through the membranes due to its smaller kinetic diameter and higher condensability than the other gases. Compared to other dehumidification technologies such as direct cooling or desiccation, there is no phase transition involved in membrane dehumidification, neither the contact between the fresh air stream and the desiccants. Hence, membrane dehumidification would not only require less energy consumption but also avoid cross-contamination problems. A pilot scale air dehumidification system is built in this study which comprises nine pieces of one-inch PAN/PDMS hollow fiber membrane modules. A 150 h long-term test shows that the membrane modules has good water vapor transport properties by using a low vacuum force of only 0.78 bar absolute pressure at the lumen side. The water vapor concentration of the feed humid air decreases dramatically from a range of 18–22 g/m3 to a range of 13.5–18.3 g/m3. Most importantly, the total energy saving is up to 26.2% compared with the conventional air conditioning process.

  12. Hollow Fiber Membrane Dehumidification Device for Air Conditioning System.

    Science.gov (United States)

    Zhao, Baiwang; Peng, Na; Liang, Canzeng; Yong, Wai Fen; Chung, Tai-Shung

    2015-01-01

    In order to provide a comfortable living and working environment indoors in tropical countries, the outdoor air often needs to be cooled and dehumidified before it enters the rooms. Membrane separation is an emerging technology for air dehumidification and it is based on the solution diffusion mechanism. Water molecules are preferentially permeating through the membranes due to its smaller kinetic diameter and higher condensability than the other gases. Compared to other dehumidification technologies such as direct cooling or desiccation, there is no phase transition involved in membrane dehumidification, neither the contact between the fresh air stream and the desiccants. Hence, membrane dehumidification would not only require less energy consumption but also avoid cross-contamination problems. A pilot scale air dehumidification system is built in this study which comprises nine pieces of one-inch PAN/PDMS hollow fiber membrane modules. A 150 h long-term test shows that the membrane modules has good water vapor transport properties by using a low vacuum force of only 0.78 bar absolute pressure at the lumen side. The water vapor concentration of the feed humid air decreases dramatically from a range of 18-22 g/m³ to a range of 13.5-18.3 g/m³. Most importantly, the total energy saving is up to 26.2% compared with the conventional air conditioning process. PMID:26580660

  13. Contact and Bandgap Engineering in Two Dimensional Crystal

    Science.gov (United States)

    Chu, Tao

    At the heart of semiconductor research, bandgap is one of the key parameters for materials and determine their applications in modern technologies. For traditional bulk semiconductors, the bandgap is determined by the chemical composition and specific arrangement of the crystal lattices, and usually invariant during the device operation. Nevertheless, it is highly desirable for many optoelectronic and electronic applications to have materials with continuously tunable bandgap available. In the past decade, 2D layered materials including graphene and transition metal dichalcogenides (TMDs) have sparked interest in the scientific community, owing to their unique material properties and tremendous potential in various applications. Among many newly discovered properties that are non-existent in bulk materials, the strong in-plane bonding and weak van der Waals inter-planar interaction in these 2D layered structures leads to a widely tunable bandgap by electric field. This provides an extra knob to engineer the fundamental material properties and open a new design space for novel device operation. This thesis focuses on this field controlled dynamic bandgap and can be divided into three parts: (1) bilayer graphene is the first known 2D crystal with a bandgap can be continuously tuned by electric field. However, the electrical transport bandgaps is much smaller than both theoretical predictions and extracted bandgaps from optical measurements. In the first part of the thesis, the limiting factors of preventing achieving a large transport bandgap in bilayer graphene are investigated and different strategies to achieve a large transport bandgap are discussed, including the vertically scaling of gate oxide and patterning channel into ribbon structure. With a record large transport bandgap of ~200meV, a dual-gated semiconducting bilayer graphene P/N junction with extremely scaled gap of 20nm in-between is fabricated. A tunable local maxima feature, associated with 1D v

  14. 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-ybuffers

    Institute of Scientific and Technical Information of China (English)

    Ji Lian; Lu Shu-Long; Jiang De-Sheng; Zhao Yong-Ming; Tan Ming; Zhu Ya-Qi; Dong Jian-Rong

    2013-01-01

    Single-junction,lattice-mismatched In0.69Ga0.31 As thermophotovoltaic (TPV) devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition (MOCVD).Compositionally undulating stepgraded InAsyPl-y buffer layers with a lattice mismatch of ~ 1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate.With an optimized buffer thickness,the In0.69Ga0.31 As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion.High-performance single-junction devices are demonstrated,with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm2,which are measured under the standard solar simulator of air mass 1.5-global (AM 1.5 G).

  15. Electrically Tunable Bandgaps in Bilayer MoS₂.

    Science.gov (United States)

    Chu, Tao; Ilatikhameneh, Hesameddin; Klimeck, Gerhard; Rahman, Rajib; Chen, Zhihong

    2015-12-01

    Artificial semiconductors with manufactured band structures have opened up many new applications in the field of optoelectronics. The emerging two-dimensional (2D) semiconductor materials, transition metal dichalcogenides (TMDs), cover a large range of bandgaps and have shown potential in high performance device applications. Interestingly, the ultrathin body and anisotropic material properties of the layered TMDs allow a wide range modification of their band structures by electric field, which is obviously desirable for many nanoelectronic and nanophotonic applications. Here, we demonstrate a continuous bandgap tuning in bilayer MoS2 using a dual-gated field-effect transistor (FET) and photoluminescence (PL) spectroscopy. Density functional theory (DFT) is employed to calculate the field dependent band structures, attributing the widely tunable bandgap to an interlayer direct bandgap transition. This unique electric field controlled spontaneous bandgap modulation approaching the limit of semiconductor-to-metal transition can open up a new field of not yet existing applications. PMID:26560813

  16. Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor

    Science.gov (United States)

    Wang, Yu-Jiao; Zhou, Kai-Ge; Yu, Geliang; Zhong, Xing; Zhang, Hao-Li

    2016-01-01

    Arsenene, as a member of the Group V elemental two-dimensional materials appears on the horizon, has shown great prospects. However, its indirect bandgap limits the applications in optoelectronics. In this theoretical work, we reported that partial oxidation can tune the indirect bandgap of arsenene into the direct one. Attributed to the enthalpy decreasing linear to the oxygen ratio, partial oxidized arsenene can be controllably produced by the progressive oxidation under low temperature. Importantly, by increasing the oxygen content from 1O/18As to 18O/18As, the oxidation can narrow the direct bandgap of oxidized arsenene from 1.29 to 0.02 eV. The bandgap of partial oxidized arsenene is proportional to the oxygen content. Consequently, the partial oxidized arsenene with tunable direct bandgap has great potentials in the high efficient infra light emitter and photo-voltaic devices. PMID:27114052

  17. Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor

    Science.gov (United States)

    Wang, Yu-Jiao; Zhou, Kai-Ge; Yu, Geliang; Zhong, Xing; Zhang, Hao-Li

    2016-04-01

    Arsenene, as a member of the Group V elemental two-dimensional materials appears on the horizon, has shown great prospects. However, its indirect bandgap limits the applications in optoelectronics. In this theoretical work, we reported that partial oxidation can tune the indirect bandgap of arsenene into the direct one. Attributed to the enthalpy decreasing linear to the oxygen ratio, partial oxidized arsenene can be controllably produced by the progressive oxidation under low temperature. Importantly, by increasing the oxygen content from 1O/18As to 18O/18As, the oxidation can narrow the direct bandgap of oxidized arsenene from 1.29 to 0.02 eV. The bandgap of partial oxidized arsenene is proportional to the oxygen content. Consequently, the partial oxidized arsenene with tunable direct bandgap has great potentials in the high efficient infra light emitter and photo-voltaic devices.

  18. Review of wide band-gap semiconductors technology

    Directory of Open Access Journals (Sweden)

    Jin Haiwei

    2016-01-01

    Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

  19. A comparative study between SMS interferometers and lossy mode resonace optical fiber devices for sensing applications

    Science.gov (United States)

    Socorro, A. B.; Hernaez, M.; Del Villar, I.; Corres, J. M.; Arregui, F. J.; Matias, I. R.

    2015-05-01

    Optical fiber sensors are of great interest due to their intrinsic advantages over electronic sensors. In this work, the sensing characteristics of two different and novel optical fiber devices are compared, after simultaneously depositing a thin-film using the layer-by-layer assembly deposition process. The first one is an SMS structure, formed by splicing two single-mode fiber pigtails on both sides of a coreless multimode fiber segment. This structure induces an interferometric phenomenon that generates several attenuation and transmission bands along the spectrum. These bands are sensitive to variations in the surrounding refractive index, although this sensitivity has been enhanced by a TiO2/PSS thin-film. The other device is a 40 mm uncladded segment of a 200 μm-core multimode optical fiber. When coated by a TiO2/PSS thinfilm, part of the light transmitted into the uncladded core is coupled into the thin-film, generating a lossy mode resonance (LMR). The absorption peaks due to these phenomena red-shift as long as the thin-film thickness increases or the external RI becomes higher. The performance of these devices as refractometers and relative humidity sensors are tested. Results show that the LMR-based sensor is more sensitive in both situations, in spite of its lower sensitivity. Particularly, it presents a 7-fold sensitivity enhancement when measuring surrounding medium refractive index changes and a 10-fold sensitivity enhancement when measuring environmental relative humidity. To our knowledge, this is the first time that a comparative study between SMS and LMR sensors is performed.

  20. INVESTIGATION ON VARIOUS DESIGN PARAMETERS WHICH AFFECT THE BANDGAP OF TWO DIMENSIONAL PHOTONIC CRYSTAL STRUCTURE

    OpenAIRE

    Anila Dhingra*, K. C. Roy, Govind Kumar

    2016-01-01

    An emerging element in optical fiber communication, 2D Photonic Crystal is an artificial periodic structure having a bandgap which shows a prohibition of a range of wavelengths to pass away through it. Various design parameters which affect the bandgap of 2D photonic crystal structure such as lattice structure, shape of rods, r/a ratio, dielectric constant etc. are studied in this paper. The Plane Wave Expansion (PWE) method is used to calculate the bandgap structure of two dimensional photon...

  1. Optofluidic Temperature and Pressure Measurements with Fiber Bragg Gratings Embedded in Microfluidic Devices

    CERN Document Server

    Cooksey, Gregory A

    2016-01-01

    The integration of photonic sensors into microfluidic devices provides opportunities for dynamic measurement of chemical and physical properties of fluids in very small volumes. We previously reported on the use of commercially available Fiber Bragg Gratings (FBGs) and on-chip silicon waveguides for temperature sensing. In this report, we demonstrate the integration of FBGs into easy-to-fabricate microfluidic devices and report on their sensitivity for temperature and pressure measurement in microliter volumes. These sensors present new routes to measurement in microfluidic applications such as small-volume calorimetry and microflow metrology.

  2. An optical fiber-taper probe for wafer-scale microphotonic device characterization

    OpenAIRE

    Michael, C. P.; Borselli, M; Johnson, T. J.; Chrystal, C; Painter, O.

    2007-01-01

    A small depression is created in a straight optical fiber taper to form a local probe suitable for studying closely spaced, planar microphotonic devices. The tension of the "dimpled" taper controls the probe-sample interaction length and the level of noise present during coupling measurements. Practical demonstrations with high-Q silicon microcavities include testing a dense array of undercut microdisks (maximum Q = 3.3x10^6) and a planar microring (Q = 4.8x10^6).

  3. An optical fiber-taper probe for wafer-scale microphotonic device characterization

    CERN Document Server

    Michael, C P; Johnson, T J; Chrystal, C; Painter, O; 10.1364/OE.15.004745

    2009-01-01

    A small depression is created in a straight optical fiber taper to form a local probe suitable for studying closely spaced, planar microphotonic devices. The tension of the "dimpled" taper controls the probe-sample interaction length and the level of noise present during coupling measurements. Practical demonstrations with high-Q silicon microcavities include testing a dense array of undercut microdisks (maximum Q = 3.3x10^6) and a planar microring (Q = 4.8x10^6).

  4. Wide bandgap matrix switcher, amplifier and oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Sampayan, Stephen

    2016-08-16

    An electronic device comprising an optical gate, an electrical input an electrical output and a wide bandgap material positioned between the electrical input and the electrical output to control an amount of current flowing between the electrical input and the electrical output in response to a stimulus received at the optical gate can be used in wideband telecommunication applications in transmission of multi-channel signals.

  5. CMOS bandgap references and temperature sensors and their applications

    OpenAIRE

    Wang, G.

    2005-01-01

    Two main parts have been presented in this thesis: device characterization and circuit. In integrated bandgap references and temperature sensors, the IC(VBE, characteristics of bipolar transistors are used to generate the basic signals with high accuracy. To investigate the possibilities to fabricate high-precision bandgap references and temperature sensors in low-cost CMOS technology, the electrical characteristics of substrate bipolar pnp transistors have been investigated over a wide tempe...

  6. Photonic crystal fibers

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper; Hansen, K P; Nielsen, M D;

    2003-01-01

    Photonic crystal fibers having a complex microstructure in the transverse plane constitute a new and promising class of optical fibers. Such fibers can either guide light through total internal reflection or the photonic bandgap effect, In this paper, we review the different types and applications...... of photonic crystal fibers with particular emphasis on recent advances in the field....

  7. Localized surface plasmon fiber device coated with carbon nanotubes for the specific detection of CO2

    Science.gov (United States)

    Allsop, T.; Arif, R.; Neal, R.; Kalli, K.; Kundrát, V.; Rozhin, A.; Culverhouse, P.; Webb, D. J.

    2015-08-01

    We explored the potential of a carbon nanotube (CNT) coating working in conjunction with a recently developed localized surface plasmon (LSP) device (based upon a nanostructured thin film consisting of of nano-wires of platinum) with ultra-high sensitivity to changes in the surrounding index. The uncoated LSP sensor's transmission resonances exhibited a refractive index sensitivity of Δλ/Δn ~ -6200nm/RIU and ΔΙ/Δn ~5900dB/RIU, which is the highest reported spectral sensitivity of a fiber optic sensor to bulk index changes within the gas regime. The complete device provides the first demonstration of the chemically specific gas sensing capabilities of CNTs utilizing their optical characteristics. This is proven by investigating the spectral response of the sensor before and after the adhesion of CNTs to alkane gases along with carbon dioxide. The device shows a distinctive spectral response in the presence of gaseous CO2 over and above what is expected from general changes in the bulk refractive index. This fiber device yielded a limit of detection of 150ppm for CO2 at a pressure of one atmosphere. Additionally the adhered CNTs actually reduce sensitivity of the device to changes in bulk refractive index of the surrounding medium. The polarization properties of the LSP sensor resonances are also investigated and it is shown that there is a reduction in the overall azimuthal polarization after the CNTs are applied. These optical devices offer a way of exploiting optically the chemical selectivity of carbon nanotubes, thus providing the potential for real-world applications in gas sensing in many inflammable and explosive environments.

  8. Wireless electro-optic switching network for optical fiber sensor array using MEMS-IDT devices

    Science.gov (United States)

    Varadan, Vijay K.; Varadan, Vasundara V.

    1999-09-01

    Optical fiber arrays have been proposed for signal paths in various civilian and military controls as a means of offering advanced sensing functions not available in electronic systems. To implement optic fiber sensors on various control systems, a proper electro-optic architecture (EOA) with a bar- coded electro-optical switch needs to be studied. In this paper, a design of such EO switch is proposed which can be operated remotely. Lithium Niobate is chosen as the EO material. The MEMS-IDT device is designed with Lithium Niobate as a substrate with IDT and a set of floating reflectors. The reflectors can be programmable and thus a bar-coded switch can be fabricated. The electrostatic field between the reflectors and the Lithium Niobate serves as the fast acting switch in this application.

  9. Development of an opto-electronic fiber device with multiple nano-probes

    Science.gov (United States)

    Mehta, N.; Cocking, A.; Zhang, C.; Ma, D.; Xu, Y.; Liu, Z.

    2016-11-01

    We present the fabrication and characterization of an opto-electronic fiber device which can allow for both electromechanical functionality and optical waveguiding capability. The air holes of a photonic crystal fiber are selectively sealed and then pumped with molten metal under pressure. The metal filled holes act as electrodes to which individual carbon nanotubes (CNT) are attached precisely by a laser-welding technique or a focused ion beam assisted pick-and-bond technique. The optical modal profile and the group velocity dispersion of the fabricated device are studied both numerically and experimentally. We also present preliminary experimental proof showing the feasibility of electric actuation of a pair of nanotubes by applying up to 40 V potential difference between the filled electrodes. Furthermore, numerical simulations are carried out which agree with the experimentally observed displacement of the CNT upon electric actuation. The unique aspect of our device is that it provides optical waveguiding and electromechanical nano-probing capability in a single package. Such combined functionality can potentially enable simultaneous electrical and optical manipulation and interrogation at the nanoscale.

  10. Small size probe for inner profile measurement of pipes using optical fiber ring beam device

    Science.gov (United States)

    Wakayama, Toshitaka; Machi, Kizuku; Yoshizawa, Toru

    2012-11-01

    The requirements of inner profile measurement of pipes and holes become recently larger and larger, and applications of inner profile measurement have rapidly expanded to medical field as well as industrial fields such as mechanical, automobile and heavy industries. We have proposed measurement method by incorporating a ring beam device that produces a disk beam and have developed various probes for different inner profile measurement. To meet request for applying to smaller diameter pipes, we tried to improve the ring beam light source using a conical mirror, optical fiber collimator and a laser diode. At this moment a probe with the size of 5 mm in diameter has been realized.

  11. Fiber

    Science.gov (United States)

    Diet - fiber; Roughage; Bulk ... Dietary fiber adds bulk to your diet. Because it makes you feel full faster, it can help with ... Elsevier Saunders; 2016:chap 213. National Research Council. ... Fiber, Fat, Fatty Acids, Cholesterol, Protein, and Amino Acids ( ...

  12. Fiber Optical Improvements for a Device Used in Laparoscopic Hysterectomy Surgery

    Science.gov (United States)

    Hernández Garcia, Ricardo; Vázquez Mercado, Liliana; García-Torales, G.; Flores, Jorge L.; Barcena-Soto, Maximiliano; Casillas Santana, Norberto; Casillas Santana, Juan Manuel

    2006-09-01

    Hysterectomy removes uterus from patients suffering different pathologies. One of the most common techniques for performing it is the laparoscopically-assisted vaginal hysterectomy (LAVH). In the final stage of the procedure, surgeons face the need to unambiguously identify the vaginal cuff before uterus removal. The aim of this research is to adapt a local source of illumination to a polymer cup-like device adapted to a stainless steel shaft that surgeons nowadays use to manipulate the uterus in LAVH. Our proposal consists in implementing a set of optical fiber illuminators along the border of the cup-like device to illuminate the exact vaginal cupola, using an external light source. We present experimental results concerning temperature increases in quasi adiabatic conditions in cow meat under different light intensity illumination.

  13. Analysis and Optimization of Splice-Joint Attenuation of Single-Mode Fibers and Photonic Crystal Fibers Based Devices in Optical Communication Networks

    Directory of Open Access Journals (Sweden)

    Faramarz Seraji

    2008-06-01

    Full Text Available Due to expansion of photonic crystal fiber (PCF based optical devices in optical communication networks, the connection process between conventional optical fibers (COF as transmission medium and these devices has attracted the researchers. Considering the splice joint between the COF and PCF, in this paper, the fundamental core and cladding modes are analyzed by scalar effective index method (SEIM and vectorial effective index method (VEIM, and the results are compared with finite difference frequency domain (FDFD method. Then by using Gaussian approximation, the effects of bending and transverse misalignment at splice joint are analyzed. Based on the obtained results, for the first time, an approach to optimize the attenuation of the splice joint between dissimilar optical fibers is presented.

  14. Fiber-optic add-drop device based on a silica microsphere-whispering gallery mode system

    OpenAIRE

    Ming CAI; Hunziker, Guido; Vahala, Kerry J.

    1999-01-01

    An all-optical passive four-port system including a fused silica microsphere and two tapered fibers is proposed and demonstrated for the application as a channel adding-dropping device. It is shown that channels can be selectively exchanged between two fibers by coupling to a whispering gallery mode resonance in the microsphere. Finesse in excess of 11150 is measured for the loaded whispering gallery modes.

  15. High brightness laser-diode device emitting 500 W from a 200 μm/NA0.22 fiber

    Science.gov (United States)

    Junhong, Yu; Linhui, Guo; Hualing, Wu; Zhao, Wang; Hao, Tan; Songxin, Gao; Deyong, Wu; Kai, Zhang

    2016-06-01

    A practical method of achieving high brightness and high power fiber-coupled laser-diode device is demonstrated both by experiment and ZEMAX software simulation, which is obtained by technologies of precision beam collimation, free space beam combining and polarization beam combining based on mini-bar diode laser chip. Using this method, fiber-coupled laser-diode module output power from the multimode fiber with 200 μm core diameter and 0.22 numerical aperture (NA) could reach 528 W, equalizing brightness is 11.0 MW/(cm2 sr) and electro-optical efficiency (defined as fiber output power divided by voltage and current of the module) is 43.0%. By this method, much wider applications of fiber-coupled laser-diode are anticipated.

  16. Origin of Sub-Bandgap Electroluminescence in Organic Light-Emitting Diodes.

    Science.gov (United States)

    Xiang, Chaoyu; Peng, Cheng; Chen, Ying; So, Franky

    2015-10-28

    Sub-bandgap electroluminescence in organic light emitting diodes is a phenomenon in which the electroluminescence turn-on voltage is lower than the bandgap voltage of the emitter. Based on the results of transient electroluminescence (EL) and photoluminescence and electroabsorption spectroscopy measurements, it is concluded that in rubrene/C60 devices, charge transfer excitons are generated at the rubrene/C60 interface under sub-bandgap driving conditions, leading to the formation of triplet excitons, and sub-bandgap EL is the result of the subsequent triplet-triplet annihilation process. PMID:26312783

  17. High power fiber delivery for laser ignition applications.

    Science.gov (United States)

    Yalin, Azer P

    2013-11-01

    The present contribution provides a concise review of high power fiber delivery research for laser ignition applications. The fiber delivery requirements are discussed in terms of exit energy, intensity, and beam quality. Past research using hollow core fibers, solid step-index fibers, and photonic crystal and bandgap fibers is summarized. Recent demonstrations of spark delivery using large clad step-index fibers and Kagome photonic bandgap fibers are highlighted.

  18. High performance, high bandgap, lattice-mismatched, GaInP solar cells

    Science.gov (United States)

    Wanlass, Mark W.; Carapella, Jeffrey J.; Steiner, Myles A.

    2014-07-08

    High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.

  19. Platform for enhanced light-graphene interaction length and miniaturizing fiber stereo-devices

    CERN Document Server

    Xu, Fei; Chen, Jin-hui; Chen, Ye; Lu, Yan-qing

    2014-01-01

    Sufficient light-matter interactions are important for waveguide-coupled graphene optoelectronic devices. Using a microfiber-based lab-on-a-rod technique, we present a platform for ultra-long light-graphene interaction and design graphene-integrated helical microfiber (MF) devices. Using this approach, we experimentally demonstrate an in-line stereo polarizer by wrapping an MF on a rod pretreated with a graphene sheet. The device operates as a broadband (450 nm wavelength) polarizer capable of achieving an extinction ratio (ER) as high as ~8 dB/coil in the telecommunication band. Furthermore, we extend this approach to successfully demonstrate a high-Q graphene-based single-polarization resonator, which operates with an ER of ~11 dB with excellent suppression of polarization noise. The fiber-coil resonator shows great potential for sensing applications and gyro-integration. By specializing the rod surface and coil geometry, we believe the preliminary results reported herein could contribute to advancing the r...

  20. Resonant filtered fiber amplifiers

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard; Laurila, Marko; Olausson, Christina Bjarnal Thulin;

    2013-01-01

    In this paper we present our recent result on utilizing resonant/bandgap fiber designs to achieve high performance ytterbium doped fiber amplifers for achieving diffraction limited beam quality in large mode area fibers, robust bending performance and gain shaping for long wavelength operation...

  1. Large Bandgap Semiconductors for Solar Water Splitting

    DEFF Research Database (Denmark)

    Malizia, Mauro

    water splitting devices having tandem design. The increase of the photovoltage produced by GaP under illumination was the main goal of this work. GaP has a bandgap of 2.25 eV and could in theory produce a photovoltage of approximately 1.7 V. Instead, the photovoltage produced by the semiconductor...... density generated by GaP was increased by more than 60% by electrochemical etching of the surface. The etching process produces a rough microstructured surface that increases the optical path length of the incident photons and the collection of photogenerated electrons.Furthermore, the synthesis of BiVO4...

  2. Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure.

    Science.gov (United States)

    Hwang, Beomyong; Hwang, Jeongwoon; Yoon, Jong Keon; Lim, Sungjun; Kim, Sungmin; Lee, Minjun; Kwon, Jeong Hoon; Baek, Hongwoo; Sung, Dongchul; Kim, Gunn; Hong, Suklyun; Ihm, Jisoon; Stroscio, Joseph A; Kuk, Young

    2016-08-09

    Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recent transport measurement demonstrated the presence of a bandgap in a graphene layer where the asymmetry was introduced by placing a graphene layer on a hexagonal boron nitride (h-BN) substrate. Similar bandgap has been observed in graphene layers on metal substrates by local probe measurements; however, this phenomenon has not been observed in graphene layers on a near-insulating substrate. Here, we present bulk bandgap-like features in a graphene layer epitaxially grown on an h-BN substrate using scanning tunneling spectroscopy. We observed edge states at zigzag edges, edge resonances at armchair edges, and bandgap-like features in the bulk.

  3. Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure

    Science.gov (United States)

    Hwang, Beomyong; Hwang, Jeongwoon; Yoon, Jong Keon; Lim, Sungjun; Kim, Sungmin; Lee, Minjun; Kwon, Jeong Hoon; Baek, Hongwoo; Sung, Dongchul; Kim, Gunn; Hong, Suklyun; Ihm, Jisoon; Stroscio, Joseph A.; Kuk, Young

    2016-08-01

    Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recent transport measurement demonstrated the presence of a bandgap in a graphene layer where the asymmetry was introduced by placing a graphene layer on a hexagonal boron nitride (h-BN) substrate. Similar bandgap has been observed in graphene layers on metal substrates by local probe measurements; however, this phenomenon has not been observed in graphene layers on a near-insulating substrate. Here, we present bulk bandgap-like features in a graphene layer epitaxially grown on an h-BN substrate using scanning tunneling spectroscopy. We observed edge states at zigzag edges, edge resonances at armchair edges, and bandgap-like features in the bulk.

  4. Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure

    Science.gov (United States)

    Hwang, Beomyong; Hwang, Jeongwoon; Yoon, Jong Keon; Lim, Sungjun; Kim, Sungmin; Lee, Minjun; Kwon, Jeong Hoon; Baek, Hongwoo; Sung, Dongchul; Kim, Gunn; Hong, Suklyun; Ihm, Jisoon; Stroscio, Joseph A.; Kuk, Young

    2016-01-01

    Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recent transport measurement demonstrated the presence of a bandgap in a graphene layer where the asymmetry was introduced by placing a graphene layer on a hexagonal boron nitride (h-BN) substrate. Similar bandgap has been observed in graphene layers on metal substrates by local probe measurements; however, this phenomenon has not been observed in graphene layers on a near-insulating substrate. Here, we present bulk bandgap-like features in a graphene layer epitaxially grown on an h-BN substrate using scanning tunneling spectroscopy. We observed edge states at zigzag edges, edge resonances at armchair edges, and bandgap-like features in the bulk. PMID:27503427

  5. Hierarchical structural health monitoring system combining a fiber optic spinal cord network and distributed nerve cell devices

    Science.gov (United States)

    Minakuchi, Shu; Tsukamoto, Haruka; Takeda, Nobuo

    2009-03-01

    This study proposes novel hierarchical sensing concept for detecting damages in composite structures. In the hierarchical system, numerous three-dimensionally structured sensor devices are distributed throughout the whole structural area and connected with the optical fiber network through transducing mechanisms. The distributed "sensory nerve cell" devices detect the damage, and the fiber optic "spinal cord" network gathers damage signals and transmits the information to a measuring instrument. This study began by discussing the basic concept of the hierarchical sensing system thorough comparison with existing fiber optic based systems and nerve systems in the animal kingdom. Then, in order to validate the proposed sensing concept, impact damage detection system for the composite structure was proposed. The sensor devices were developed based on Comparative Vacuum Monitoring (CVM) system and the Brillouin based distributed strain sensing was utilized to gather the damage signals from the distributed devices. Finally a verification test was conducted using prototype devices. Occurrence of barely visible impact damage was successfully detected and it was clearly indicated that the hierarchical system has better repairability, higher robustness, and wider monitorable area compared to existing systems utilizing embedded optical fiber sensors.

  6. Development of a biointegrated mandibular reconstruction device consisting of bone compatible titanium fiber mesh scaffold.

    Science.gov (United States)

    Hirota, Makoto; Shima, Takaki; Sato, Itaru; Ozawa, Tomomichi; Iwai, Toshinori; Ametani, Akihiro; Sato, Mitsunobu; Noishiki, Yasuharu; Ogawa, Takahiro; Hayakawa, Tohru; Tohnai, Iwai

    2016-01-01

    Coating biomaterials with a thin hydroxyapatite (HA) was proven effective in enhancing bone compatibility. Segmental bone defects are considered as the most difficult defect to repair in bone regeneration therapy. We developed submicron-thin HA-coated titanium fiber mesh scaffolds to reconstruct immediately loaded segmental mandibular defects and evaluated their bone compatibility in vitro and in vivo. Human osteoblasts attachment, proliferation, and osteocalcin expression in non- and HA-coated scaffolds were evaluated. A 10-mm long segmental bone defect in a rabbit mandibular bone was reconstructed with non- or HA-coated scaffolds, which were removed at 9 and 21 weeks, to evaluate the mechanical strength of the bone-scaffold connection and the bone formation around the scaffold. Expression of osteocalcin was greater in HA-coated scaffolds. In vivo bone formation in HA-coated scaffolds was greater than that in non-coated scaffolds at 21 weeks. Newly formed bone in HA-coated scaffolds mostly restored bone continuity. Scanning electron microscopy identified strong integration of the bone and HA-coated scaffolds. The mechanical strength of the bone-scaffold connection was 3-fold greater in HA-coated scaffolds than that in non-coated scaffolds. These results suggest that a thin HA-coated titanium fiber mesh scaffold is a bone-compatible mandibular reconstruction device in immediately loaded segmental defects.

  7. CMOS bandgap references and temperature sensors and their applications

    NARCIS (Netherlands)

    Wang, G.

    2005-01-01

    Two main parts have been presented in this thesis: device characterization and circuit. In integrated bandgap references and temperature sensors, the IC(VBE, characteristics of bipolar transistors are used to generate the basic signals with high accuracy. To investigate the possibilities to fabrica

  8. Wide Bandgap Extrinsic Photoconductive Switches

    Science.gov (United States)

    Sullivan, James Stephen

    Wide Bandgap Extrinsic Photoconductive Switches Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6H-SiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators. The successful development of a vanadium compensated, 6H-SiC extrinsic photoconductive switch for use as a closing switch for compact accelerator applications was realized by improvements made to the vanadium, nitrogen and boron impurity densities. The changes made to the impurity densities were based on the physical intuition outlined and simple rate equation models. The final 6H-SiC impurity 'recipe' calls for vanadium, nitrogen and boron densities of 2.5 e17 cm-3, 1.25e17 cm-3 and ≤ 1e16 cm-3, respectively. This recipe was originally developed to maximize the quantum efficiency of the vanadium compensated 6H-SiC, while maintaining a thermally stable semi-insulating material. The rate equation models indicate that, besides increasing the quantum efficiency, the impurity recipe should be expected to also increase the carrier recombination time. Three generations of 6H-SiC materials were tested. The

  9. High brightness laser-diode device emitting 160 watts from a 100 μm/NA 0.22 fiber.

    Science.gov (United States)

    Yu, Junhong; Guo, Linui; Wu, Hualing; Wang, Zhao; Tan, Hao; Gao, Songxin; Wu, Deyong; Zhang, Kai

    2015-11-10

    A practical method of achieving a high-brightness and high-power fiber-coupled laser-diode device is demonstrated both by experiment and ZEMAX software simulation, which is obtained by a beam transformation system, free-space beam combining, and polarization beam combining based on a mini-bar laser-diode chip. Using this method, fiber-coupled laser-diode module output power from the multimode fiber with 100 μm core diameter and 0.22 numerical aperture (NA) could reach 174 W, with equalizing brightness of 14.2  MW/(cm2·sr). By this method, much wider applications of fiber-coupled laser-diodes are anticipated. PMID:26560762

  10. Numerical simulations of nanodiamond nitrogen-vacancy centers coupled with tapered optical fibers as hybrid quantum nanophotonic devices.

    Science.gov (United States)

    Almokhtar, Mohamed; Fujiwara, Masazumi; Takashima, Hideaki; Takeuchi, Shigeki

    2014-08-25

    Tapered optical fibers are promising one-dimensional nanophotonic waveguides that can provide efficient coupling between their fundamental mode and quantum nanoemitters placed inside them. Here, we present numerical studies on the coupling of single nitrogen-vacancy (NV) centers (single point dipoles) in nanodiamonds with tapered fibers. Our results lead to two important conclusions: (1) A maximum coupling efficiency of 53.4% can be realized for the two fiber ends when the NV bare dipole is located at the center of the tapered fiber. (2) NV centers even in 100-nm-sized nanodiamonds where bulk-like optical properties were reported show a coupling efficiency of 22% at the taper surface, with the coupling efficiency monotonically decreasing as the nanodiamond size increases. These results will be helpful in guiding the development of hybrid quantum devices for applications in quantum information science. PMID:25321215

  11. Research and design of Class-F high efficiency power amplifier based on wide band-gap device%基于宽禁带功率器件的F类放大器的研究与设计

    Institute of Scientific and Technical Information of China (English)

    倪春; 张量; 吴先良

    2014-01-01

    F类射频功率放大器作为开关模式放大器的一种,其理想效率为100%。传统F类功率放大器的设计方法是利用输出端谐波抑制,在晶体管的漏极得到近似方波的电压信号和近似半正弦波的电流信号,以此提高放大器效率。文章通过研究电路的结构,在F类功率放大器的输入端加入谐波抑制电路,同时利用输入和输出谐波抑制匹配网络,能够更有效提高输出功率和功率附加效率;结合宽禁带功率器件,在S波段完成一款电路的设计,在3.45~3.55 GHz频带内,输入激励为28 dBm 条件下,测试得到最大 PAE能够达到78.3%,输出功率40.5 dBm ,实验结果和仿真结果基本吻合。%Class-F RF power amplifiers are a type of switching amplifier offering very high efficiency approaching 100% .The traditional design methods of Class-F amplifier use the harmonic suppression at the output of the amplifier ,w here square-like drain voltage and close-to-half-sinusoidal drain cur-rent waveforms are obtained to improve the efficiency of amplifier .Through the study of circuit struc-ture ,input harmonic controllable matching network is added in novel high efficiency Class-F ampli-fier ,meanwhile ,both input and output harmonic controllable matching networks are used to obtain the best power-added efficiency .Using the wide band-gap device ,the improved Class-F power ampli-fier is designed at the S band .In 3.45-3.55 GHz ,the measurement results show that the maximum PAE of the power amplifier can achieve 78.3% with 40.5 dBm output power ,when the input power is 28 dBm .The experimental results are found to be in good agreement with the simulation results .

  12. Photonic Bandgap (PBG) Shielding Technology

    Science.gov (United States)

    Bastin, Gary L.

    2007-01-01

    Photonic Bandgap (PBG) shielding technology is a new approach to designing electromagnetic shielding materials for mitigating Electromagnetic Interference (EM!) with small, light-weight shielding materials. It focuses on ground planes of printed wiring boards (PWBs), rather than on components. Modem PSG materials also are emerging based on planar materials, in place of earlier, bulkier, 3-dimensional PBG structures. Planar PBG designs especially show great promise in mitigating and suppressing EMI and crosstalk for aerospace designs, such as needed for NASA's Constellation Program, for returning humans to the moon and for use by our first human visitors traveling to and from Mars. Photonic Bandgap (PBG) materials are also known as artificial dielectrics, meta-materials, and photonic crystals. General PBG materials are fundamentally periodic slow-wave structures in I, 2, or 3 dimensions. By adjusting the choice of structure periodicities in terms of size and recurring structure spacings, multiple scatterings of surface waves can be created that act as a forbidden energy gap (i.e., a range of frequencies) over which nominally-conductive metallic conductors cease to be a conductor and become dielectrics. Equivalently, PBG materials can be regarded as giving rise to forbidden energy gaps in metals without chemical doping, analogous to electron bandgap properties that previously gave rise to the modem semiconductor industry 60 years ago. Electromagnetic waves cannot propagate over bandgap regions that are created with PBG materials, that is, over frequencies for which a bandgap is artificially created through introducing periodic defects

  13. Controlling methods of a newly developed extra aortic counter-pulsation device using shape memory alloy fibers.

    Science.gov (United States)

    Hashem, Mohamed O; Yamada, A; Tsuboko, Y; Muira, H; Homma, D; Shiraishi, Y; Yambe, T

    2013-01-01

    Diastolic counter-pulsation has been used to provide circulatory augmentation for short term cardiac support. The success of intra-aortic balloon pump (IABP) therapy has generated interest in long term counter-pulsation strategies to treat heart failure patients. The authors have been developing a totally implantable extra aortic pulsation device for the circulatory support of heart failure patients, using 150 µm Ni-Ti anisotropic shape memory alloy (SMA) fibers. These fibers contract by Joule heating with an electric current supply. The special features of our design are as follow: non blood contacting, extra aortic pulsation function synchronizing with the native heart, a wrapping mechanical structure for the aorta in order to achieve its assistance as the aortomyoplsty and the extra aortic balloon pump. The device consisted of rubber silicone wall plates, serially connected for radial contraction. We examined the contractile function of the device, as well as it controlling methods; the phase delay parameter and the pulse width modulation, in a systemic mock circulatory system, with a pneumatically driven silicone left ventricle model, arterial rubber tubing, a peripheral resistance unit, and a venous reservoir. The device was secured around the aortic tubing with a counter-pulsation mode of 1:4 against the heartbeat. Pressure and flow waveforms were measured at the aortic outflow, as well as its driving condition of the contraction phase width and the phase delay. The device achieved its variable phase control for co-pulsation or counter-pulsation modes by changing the phase delay of the SMA fibers. Peak diastolic pressure significantly augmented, mean flow increased (p<0.05) according to the pulse width modulation. Therefore the newly developed extra aortic counter-pulsation device using SMA fibers, through it controlling methods indicated its promising alternative extra aortic approach for non-blood contacting cardiovascular circulatory support.

  14. Photonic bandgap structures

    CERN Document Server

    Marco, Pisco; Antonello, Cutolo

    2012-01-01

    This E-Book covers the research and the development of a novel generation of photonic devices for sensing applications. Key features of this book include a brief review of basic PhCs related design and fabrication concepts, a selection of crossover topics for the development of novel technological platforms for physical, chemical and biological sensing and a description of the main PhCs sensors to date by representing many of the exciting sensing applications that utilize photonic crystal structures.

  15. X-ray inspection using digital devices applied to space engines using carbon fiber case

    International Nuclear Information System (INIS)

    'Full-text:' The VEGA European small launcher of new generation is made of four stages of which the first three are solid propellant engines of advanced technology. The long experience reached in the solid propellant Field through Ariane 3, 4 and 5 programme, identified AVIO how the manufacturer of the 1st, 2nd and 3rd stage of the launcher. With the aim of minimizing launcher cost, a new technology using a low weight motor case made of carbon fiber has been developed. Other than process of fabrication also process of control are involved in the development of the new technology and, in considering the large size of the engines, the latter fall heavily on the manufacturing time and cost. In view of the reducing the recurrent cost of the launcher, AVIO is particularly interested in new technologies having the potentiality to reduce control costs. Among Non-Destructive Tests, the X-ray inspection is irreplaceable for its effectiveness, therefore improvements in X-ray imaging techniques aimed at decreasing control cost without any performance reduction, is a challenge that AVIO intends to pursue. From this point of view Digital Radiography offers good opportunity to which AVIO is looking to define the applicability to the case of interest. This paper shows the status of art and summarizes the results obtained through tests performed in collaboration with the main suppliers of digital devices working in industrial high energy X-ray NonDestructive Testing Field. (author)

  16. Design of a device for pumping a double-clad fiber laser with a laser-diode bar.

    Science.gov (United States)

    Zenteno, L A

    1994-11-01

    Pumping rare-earth-doped double-clad fiber lasers with GaAlAs laser-diode bars typically requires one to transform a 1-cm-long one-dimensional linear array of tens of multimode laser-diode sources into atwo-dimensional oblong cross section that approximately matches the fiber's first cladding shape. I describe the design of a device, henceforth called a high-brightness geometric transformer, that uses a cylindrical microlens to image the laser-diode bar near field onto a linear array of soft-glass, thin-clad, rectangular fibers. In turn, the fibers output ends are arranged to form a stack that matches the required first cladding shape. For a typical laser-diode bar with a brightness of 25 mW·µm(-2)·sr(-1), the geometric transformer output brightness is 0.6 mW·µm(-2)·sr(-1), i.e., there is a 40× intermediate loss of brightness. If the output of the geometric transformer is used to pump a Nd-doped double-clad fiber laser, anoverall brightness gain of 340× can be achieved.

  17. Monolithic femtosecond Yb-fiber laser with photonic crystal fibers

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

    We demonstrate a monolithic stable SESAM-modelocked self-starting Yb-fiber laser. A novel PM all-solid photonic bandgap fiber is used for intra-cavity of dispersion management. The ex-cavity final pulse compression is performed in a spliced-on PM hollow-core photonic crystal fiber. The laser...

  18. Current status of 1.3{micro}m fiber amplifiers: Device and system issues

    Energy Technology Data Exchange (ETDEWEB)

    Wyatt, R.; Whitley, T.; Fleming, S.; Szebesta, D.; Williams, J.R.; Davey, S.T. [BT Labs., Ipswich (United Kingdom). Network Research Div.

    1994-12-31

    The authors review the current status of the praseodymium doped fluoride fiber amplifier (PDFFA), the preferred fiber amplifier at 1.3{micro} mm. Small-signal gains of 30dB are achievable, together with output powers of 200mW, and a noise figure of 4--7dB. 1.3{micro}m transmission offers the advantage of operating near the zero dispersion wavelength of standard telecommunications fiber, allowing high speed links with simple transmitters.

  19. Wide bandgap materials in future electronic applications

    International Nuclear Information System (INIS)

    A brief overview of the impact that wide bandgap materials have, and will have in the future, on the development of (micro)electronic devices, circuits, and systems is presented. It is held that electronic control systems and thus their applications fall into three temperature domains, delineated by the maximum use temperature of the semiconductor systems with which they are equipped: the current low temperature (- 100 to 200 oC) domain dominated by silicon; a medium temperature range (200 - ∼600oC), in which GaN and AlN provide the transition to SiC; and a high temperature domain (600-1300 oC) not yet covered by any one material system and in which research and development of c-BN based composites can at first, as passives, enhance performance in all three temperature/application ranges. Current developments in most application areas are cost-not performance-driven. (author)

  20. Bandgap engineering of GaN nanowires

    Science.gov (United States)

    Ming, Bang-Ming; Wang, Ru-Zhi; Yam, Chi-Yung; Xu, Li-Chun; Lau, Woon-Ming; Yan, Hui

    2016-05-01

    Bandgap engineering has been a powerful technique for manipulating the electronic and optical properties of semiconductors. In this work, a systematic investigation of the electronic properties of [0001] GaN nanowires was carried out using the density functional based tight-binding method (DFTB). We studied the effects of geometric structure and uniaxial strain on the electronic properties of GaN nanowires with diameters ranging from 0.8 to 10 nm. Our results show that the band gap of GaN nanowires depends linearly on both the surface to volume ratio (S/V) and tensile strain. The band gap of GaN nanowires increases linearly with S/V, while it decreases linearly with increasing tensile strain. These linear relationships provide an effect way in designing GaN nanowires for their applications in novel nano-devices.

  1. Towards mid-infrared fiber-optic devices and systems for sensing, mapping and imaging

    Science.gov (United States)

    Jayasuriya, D.; Wilson, B.; Furniss, D.; Tang, Z.; Barney, E.; Benson, T. M.; Seddon, A. B.

    2016-03-01

    Novel chalcogenide glass-based fiber opens up the mid-infrared (MIR) range for real-time monitoring and control in medical diagnostics and chemical processing. Fibers with long wavelength cut-off are of interest here. Sulfide, selenide and telluride based chalcogenide glass are candidates, but there are differences in their glass forming region, thermal stability and in the short and long wavelength cut-off positions. In general sulfide and selenide glasses have greater glass stability, but shorter long-wavelength cut-off edge, compared to telluride glasses; selenide-telluride glasses are a good compromise. Low optical loss selenide-telluride based long wavelength fibers could play a substantial role in improving medical diagnostic systems, chemical sensing, and processing, and in security and agriculture. For biological tissue, the molecular finger print lies between ~3-15 μm wavelengths in the MIR region. Using MIR spectral mapping, information about diseased tissue may be obtained with improved accuracy and in vivo using bright broadband MIR super-continuum generation (SCG) fiber sources and low optical loss fiber for routing. The Ge-As-Se-Te chalcogenide glass system is a potential candidate for both MIR SCG and passive-routing fiber, with good thermal stability, wide intrinsic transparency from ~1.5 to 20 μm and low phonon energy. This paper investigates Ge-As-Se-Te glass system pairs for developing high numerical aperture (NA) small-core, step-index optical fiber for MIR SCG and low NA passive step-index optical fiber for an in vivo fiber probe. Control of fiber geometry of small-core optical fiber and methods of producing the glass material are also included in this paper.

  2. 78 FR 16296 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Science.gov (United States)

    2013-03-14

    ... Technologies General IP (Singapore) Pte. Ltd.'s and Avago Technologies U.S. Inc.'s Motion To Amend the... Technologies General IP (Singapore) Pte. Ltd. of Singapore (``Avago General IP'') and Avago Technologies U.S... complaint filed by Avago Technologies Fiber IP (Singapore) Pte. Ltd. of Singapore (``Avago Fiber...

  3. Design and Fabrication of Calibration Device for Scintillating Fibers of Tagger Microscope: For use in GlueX's QCD Experiment

    Science.gov (United States)

    Briere, Emily

    2012-10-01

    For decades, scientists have struggled to understand the chromo-electromagnetic field which confines quarks and gluons within the hadron. GlueX is a QCD experiment centered at Jefferson Lab, Virginia, seeking to better understand this gluonic field by exciting it and mapping the spectrum of exotic hybrid mesons that it generates. The experiment uses coherent bremsstrahlung radiation to produce a beam of photons, which due to their polarity act as virtual vector mesons. When incident on a liquid hydrogen target, these mesons are expected to form exotic hybrid mesons. Such particles quickly decay into new particles which are captured in a solenoid detector. The decays can then be reconstructed to examine the properties of the original exotic hybrid meson, although the initial energy of the photon is required to draw meaningful conclusions. The post-bremsstrahlung degraded electrons are bent from the main beam into the tagger microscope where they strike an array of scintillating optical fibers. Given the correlation between momentum and radial bend, the Silicon Photmultiplier sensors attached to the optical fibers are able to ``tag'' the electrons', and thus the photons', initial energies based on which fibers were hit. Providing central data for GlueX, the tagger microscope must be accurate. This paper details the design and fabrication of a scintillating fiber calibration device that moves horizontally above fiber bundles, using a green laser diode to direct light pulses into the fibers. This calibration method has been tested mechanically and via a Monte Carlo Matlab simulation, and has proven to be effective.

  4. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2013-07-03

    Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

  5. New Light-Harvesting Materials Using Accurate and Efficient Bandgap Calculations

    DEFF Research Database (Denmark)

    Castelli, Ivano Eligio; Hüser, Falco; Pandey, Mohnish;

    2014-01-01

    Electronic bandgap calculations are presented for 2400 experimentally known materials from the Materials Project database and the bandgaps, obtained with different types of functionals within density functional theory and (partial) self-consistent GW approximation, are compared for 20 randomly...... chosen compounds forming an unconventional set of ternary and quaternary materials. It is shown that the computationally cheap GLLB-SC potential gives results in good agreement (around 15%) with the more advanced and demanding eigenvalue-self-consistent GW. This allows for a high-throughput screening...... of materials for different applications where the bandgaps are used as descriptors for the efficiency of a photoelectrochemical device. Here, new light harvesting materials are proposed to be used in a one-photon photoelectrochemical device for water splitting by combining the estimation of the bandgaps...

  6. Remote-controlled delivery of CO via photoactive CO-releasing materials on a fiber optical device.

    Science.gov (United States)

    Gläser, Steve; Mede, Ralf; Görls, Helmar; Seupel, Susanne; Bohlender, Carmen; Wyrwa, Ralf; Schirmer, Sina; Dochow, Sebastian; Reddy, Gandra Upendar; Popp, Jürgen; Westerhausen, Matthias; Schiller, Alexander

    2016-08-16

    Although carbon monoxide (CO) delivery materials (CORMAs) have been generated, remote-controlled delivery with light-activated CORMAs at a local site has not been achieved. In this work, a fiber optic-based CO delivery system is described in which the photoactive and water insoluble CO releasing molecule (CORM) manganese(i) tricarbonyl [(OC)3Mn(μ3-SR)]4 (R = nPr, 1) has been non-covalently embedded into poly(l-lactide-co-d/l-lactide) and poly(methyl methacrylate) non-woven fabrics via the electrospinning technique. SEM images of the hybrid materials show a porous fiber morphology for both polymer supports. The polylactide non-woven fabric was attached to a fiber optical device. In combination with a laser irradiation source, remote-controlled and light-triggered CO release at 405 nm excitation wavelength was achieved. The device enabled a high flexibility of the spatially and timely defined application of CO with the biocompatible hybrid fabric in aqueous media. The rates of liberated CO were adjusted with the light intensity of the laser. CO release was confirmed via ATR-IR spectroscopy, a portable electrochemical CO sensor and a heterogeneous myoglobin assay. PMID:27431097

  7. Remote-controlled delivery of CO via photoactive CO-releasing materials on a fiber optical device.

    Science.gov (United States)

    Gläser, Steve; Mede, Ralf; Görls, Helmar; Seupel, Susanne; Bohlender, Carmen; Wyrwa, Ralf; Schirmer, Sina; Dochow, Sebastian; Reddy, Gandra Upendar; Popp, Jürgen; Westerhausen, Matthias; Schiller, Alexander

    2016-08-16

    Although carbon monoxide (CO) delivery materials (CORMAs) have been generated, remote-controlled delivery with light-activated CORMAs at a local site has not been achieved. In this work, a fiber optic-based CO delivery system is described in which the photoactive and water insoluble CO releasing molecule (CORM) manganese(i) tricarbonyl [(OC)3Mn(μ3-SR)]4 (R = nPr, 1) has been non-covalently embedded into poly(l-lactide-co-d/l-lactide) and poly(methyl methacrylate) non-woven fabrics via the electrospinning technique. SEM images of the hybrid materials show a porous fiber morphology for both polymer supports. The polylactide non-woven fabric was attached to a fiber optical device. In combination with a laser irradiation source, remote-controlled and light-triggered CO release at 405 nm excitation wavelength was achieved. The device enabled a high flexibility of the spatially and timely defined application of CO with the biocompatible hybrid fabric in aqueous media. The rates of liberated CO were adjusted with the light intensity of the laser. CO release was confirmed via ATR-IR spectroscopy, a portable electrochemical CO sensor and a heterogeneous myoglobin assay.

  8. Fiber

    Science.gov (United States)

    ... a fiber-rich sandwich with whole-grain bread, peanut butter, and bananas. Use whole-grain spaghetti and other ... cookies and muffins. Top whole-wheat crackers with peanut butter or low-fat cheese. Go easy on the ...

  9. Effects of sterilization methods on key properties of specialty optical fibers used in medical devices

    Science.gov (United States)

    Stolov, Andrei A.; Slyman, Brian E.; Burgess, David T.; Hokansson, Adam S.; Li, Jie; Allen, R. Steve

    2013-03-01

    Optical fibers with different types of polymer coatings were exposed to three sterilization conditions: multiple autoclaving, treatment with ethylene oxide and treatment with gamma rays. Effects of different sterilization techniques on key optical and mechanical properties of the fibers are reported. The primary attention is given to behavior of the coatings in harsh sterilization environments. The following four coating/buffer types were investigated: (i) dual acrylate, (ii) polyimide, (iii) silicone/PEEK and (iv) fluoroacrylate hard cladding/ETFE.

  10. Production of continuous piezoelectric ceramic fibers for smart materials and active control devices

    Science.gov (United States)

    French, Jonathan D.; Weitz, Gregory E.; Luke, John E.; Cass, Richard B.; Jadidian, Bahram; Bhargava, Parag; Safari, Ahmad

    1997-05-01

    Advanced Cerametrics Inc. has conceived of and developed the Viscous-Suspension-Spinning Process (VSSP) to produce continuous fine filaments of nearly any powdered ceramic materials. VSSP lead zirconate titanate (PZT) fiber tows with 100 and 790 filaments have been spun in continuous lengths exceeding 1700 meters. Sintered PZT filaments typically are 10 - 25 microns in diameter and have moderate flexibility. Prior to carrier burnout and sintering, VSSP PZT fibers can be formed into 2D and 3D shapes using conventional textile and composite forming processes. While the extension of PZT is on the order of 20 microns per linear inch, a woven, wound or braided structure can contain very long lengths of PZT fiber and generate comparatively large output strokes from relatively small volumes. These structures are intended for applications such as bipolar actuators for fiber optic assembly and repair, vibration and noise damping for aircraft, rotorcraft, automobiles and home applications, vibration generators and ultrasonic transducers for medical and industrial imaging. Fiber and component cost savings over current technologies, such as the `dice-and-fill' method for transducer production, and the range of unique structures possible with continuous VSSP PZT fiber are discussed. Recent results have yielded 1-3 type composites (25 vol% PZT) with d33 equals 340 pC/N, K equals 470, and g33 equals 80 mV/N, kt equals 0.54, kp equals 0.19, dh equals 50.1pC/N and gh equals 13 mV/N.

  11. A low-cost, manufacturable method for fabricating capillary and optical fiber interconnects for microfluidic devices.

    Science.gov (United States)

    Hartmann, Daniel M; Nevill, J Tanner; Pettigrew, Kenneth I; Votaw, Gregory; Kung, Pang-Jen; Crenshaw, Hugh C

    2008-04-01

    Microfluidic chips require connections to larger macroscopic components, such as light sources, light detectors, and reagent reservoirs. In this article, we present novel methods for integrating capillaries, optical fibers, and wires with the channels of microfluidic chips. The method consists of forming planar interconnect channels in microfluidic chips and inserting capillaries, optical fibers, or wires into these channels. UV light is manually directed onto the ends of the interconnects using a microscope. UV-curable glue is then allowed to wick to the end of the capillaries, fibers, or wires, where it is cured to form rigid, liquid-tight connections. In a variant of this technique, used with light-guiding capillaries and optical fibers, the UV light is directed into the capillaries or fibers, and the UV-glue is cured by the cone of light emerging from the end of each capillary or fiber. This technique is fully self-aligned, greatly improves both the quality and the manufacturability of the interconnects, and has the potential to enable the fabrication of interconnects in a fully automated fashion. Using these methods, including a semi-automated implementation of the second technique, over 10,000 interconnects have been formed in almost 2000 microfluidic chips made of a variety of rigid materials. The resulting interconnects withstand pressures up to at least 800psi, have unswept volumes estimated to be less than 10 femtoliters, and have dead volumes defined only by the length of the capillary. PMID:18369517

  12. Ultrahigh photoconductivity of bandgap-graded CdSxSe1‑x nanowires probed by terahertz spectroscopy

    Science.gov (United States)

    Liu, Hongwei; Lu, Junpeng; Yang, Zongyin; Teng, Jinghua; Ke, Lin; Zhang, Xinhai; Tong, Limin; Sow, Chorng Haur

    2016-06-01

    Superiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report the ultrahigh photoconductivity of bandgap-graded CdSxSe1‑x nanowires and its detailed analysis by means of ultrafast optical-pump terahertz-probe (OPTP) spectroscopy. The recombination rates and carrier mobility are quantitatively obtained via investigation of the transient carrier dynamics in the nanowires. By analysis of the terahertz (THz) spectra, we obtain an insight into the bandgap gradient and band alignment to carrier transport along the nanowires. The demonstration of the ultrahigh photoconductivity makes bandgap-graded CdSxSe1‑x nanowires a promising candidate as building blocks for nanoscale electronic and photonic devices.

  13. Very Small Bandgap π-Conjugated Polymers with Extended Thienoquinoids.

    Science.gov (United States)

    Kawabata, Kohsuke; Saito, Masahiko; Osaka, Itaru; Takimiya, Kazuo

    2016-06-22

    The introduction of quinoidal character to π-conjugated polymers is one of the effective approaches to reducing the bandgap. Here we synthesized new π-conjugated polymers (PBTD4T and PBDTD4T) incorporating thienoquinoids 2,2'-bithiophene-5,5'-dione (BTD) and benzo[1,2-b:4,5-b']dithiophene-2,6-dione (BDTD) as strong electron-deficient (acceptor) units. PBTD4T showed a deep LUMO energy level of -3.77 eV and a small bandgap of 1.28 eV, which are similar to those of the analog using thieno[3,2-b]thiophene-2,5-dione (TTD) (PTTD4T). PBDTD4T had a much deeper LUMO energy level of -4.04 eV and a significantly smaller bandgap of 0.88 eV compared to those of the other two polymers. Interestingly, PBDTD4T showed high transparency in the visible region. The very small bandgap of PBDTD4T can be rationalized by the enhanced contribution of the resonance backbone structure in which the p-benzoquinodimethane skeleton in the BDTD unit plays a crucial role. PBTD4T and PBDTD4T exhibited ambipolar charge transport with more balanced mobilities between the hole and the electron than PTTD4T. We believe that the very small bandgap, i.e., the high near-infrared activity, as well as the well-balanced ambipolar property of the π-conjugated polymers based on these units would be of particular interest in the fabrication of next-generation organic devices.

  14. Optimal design of tunable phononic bandgap plates under equibiaxial stretch

    Science.gov (United States)

    Hedayatrasa, Saeid; Abhary, Kazem; Uddin, M. S.; Guest, James K.

    2016-05-01

    Design and application of phononic crystal (PhCr) acoustic metamaterials has been a topic with tremendous growth of interest in the last decade due to their promising capabilities to manipulate acoustic and elastodynamic waves. Phononic controllability of waves through a particular PhCr is limited only to the spectrums located within its fixed bandgap frequency. Hence the ability to tune a PhCr is desired to add functionality over its variable bandgap frequency or for switchability. Deformation induced bandgap tunability of elastomeric PhCr solids and plates with prescribed topology have been studied by other researchers. Principally the internal stress state and distorted geometry of a deformed phononic crystal plate (PhP) changes its effective stiffness and leads to deformation induced tunability of resultant modal band structure. Thus the microstructural topology of a PhP can be altered so that specific tunability features are met through prescribed deformation. In the present study novel tunable PhPs of this kind with optimized bandgap efficiency-tunability of guided waves are computationally explored and evaluated. Low loss transmission of guided waves throughout thin walled structures makes them ideal for fabrication of low loss ultrasound devices and structural health monitoring purposes. Various tunability targets are defined to enhance or degrade complete bandgaps of plate waves through macroscopic tensile deformation. Elastomeric hyperelastic material is considered which enables recoverable micromechanical deformation under tuning finite stretch. Phononic tunability through stable deformation of phononic lattice is specifically required and so any topology showing buckling instability under assumed deformation is disregarded. Nondominated sorting genetic algorithm (GA) NSGA-II is adopted for evolutionary multiobjective topology optimization of hypothesized tunable PhP with square symmetric unit-cell and relevant topologies are analyzed through finite

  15. Luminescence in Conjugated Molecular Materials under Sub-bandgap Excitation

    Energy Technology Data Exchange (ETDEWEB)

    So, Franky [University of Florida

    2014-05-08

    Light emission in semiconductors occurs when they are under optical and electrical excitation with energy larger than the bandgap energy. In some low-dimensional semiconductor heterostructure systems, this thermodynamic limit can be violated due to radiative Auger recombination (AR), a process in which the sub-bandgap energy released from a recombined electron-hole pair is transferred to a third particle leading to radiative band-to-band recombination.1 Thus far, photoluminescence up-conversion phenomenon has been observed in some low dimensional semiconductor systems, and the effect is very weak and it can only be observed at low temperatures. Recently, we discovered that efficient electroluminescence in poly[2-methoxy-5-(2’-ethylhexyloxy)-1, phenylenevinylene] (MEH-PPV) polymer light-emitting devices (PLEDs) at drive voltages below its bandgap voltage could be observed when a ZnO nanoparticles (NPs) electron injection layer was inserted between the polymer and the aluminum electrode. Specifically, emitted photons with energy of 2.13 eV can be detected at operating voltages as low as 1.2 V at room temperature. Based on these data, we propose that the sub-bandgap turn-on in the MEH-PPV device is due to an Auger-assisted energy up-conversion process. The significance of this discovery is three-fold. First, radiative recombination occurs at operating voltages below the thermodynamic bandgap voltage. This process can significantly reduce the device operating voltage. For example, the current density of the device with the ZnO NC layer is almost two orders of magnitude higher than that of the device without the NC layer. Second, a reactive metal is no longer needed for the cathode. Third, this electroluminescence up-conversion process can be applied to inorganic semiconductors systems as well and their operation voltages of inorganic LEDs can be reduced to about half of the bandgap energy. Based on our initial data, we propose that the sub-bandgap turn-on in MEH

  16. Surface state photonic bandgap cavities

    OpenAIRE

    Rahachou, A. I.; Zozoulenko, I. V.

    2005-01-01

    We propose and analyze a new type of a resonant high-Q cavity for lasing, sensing or filtering applications, which is based on a surface states of a finite photonic crystal. We demonstrate that such the cavity can have a Q factor comparable with that one of conventional photonic band-gap defect mode cavities. At the same time, the distinguished feature of the surface mode cavity is that it is situated directly at the surface of the photonic crystal. This might open up new possibilities for de...

  17. Development of Spintronic Bandgap Materials

    Energy Technology Data Exchange (ETDEWEB)

    Levy, Jeremy; Awschalom, David; Floro, Jerrold

    2014-02-16

    The development of Ge/Si quantum dots with high spatial precision has been pursued, with the goal of developing a platform for “spintronics bandgap materials”. Quantum dots assemblies were grown by molecular beam epitaxy on carbon-templated silicon substrates. These structures were characterized by atomic force microscopy. Vertically gated structures were created on systems with up to six well-defined quantum dots with a controlled geometric arrangement, and low-temperature (mK) transport experiments were performed. These experiments showed evidence for a crossover from diamagnetic to Zeeman energy shifts in resonant tunneling of electrons through electronic states in the quantum dots.

  18. Phase Conjugated and Transparent Wavelength Conversions of Nyquist 16-QAM Signals Employing a Single-Layer Graphene Coated Fiber Device.

    Science.gov (United States)

    Hu, Xiao; Zeng, Mengqi; Long, Yun; Liu, Jun; Zhu, Yixiao; Zou, Kaiheng; Zhang, Fan; Fu, Lei; Wang, Jian

    2016-03-02

    We fabricate a nonlinear optical device based on a fiber pigtail cross-section coated with a single-layer graphene grown by chemical vapor deposition (CVD) method. Using the fabricated graphene-assisted nonlinear optical device and employing Nyquist 16-ary quadrature amplitude modulation (16-QAM) signal, we experimentally demonstrate phase conjugated wavelength conversion by degenerate four-wave mixing (FWM) and transparent wavelength conversion by non-degenerate FWM in graphene. We study the conversion efficiency as functions of the pump power and pump wavelength and evaluate the bit-error rate (BER) performance. We also compare the time-varying symbol sequence for graphene-assisted phase conjugated and transparent wavelength conversions of Nyquist 16-QAM signal.

  19. Small bandgap polymers for organic solar cells (polymer material development in the last 5 years)

    NARCIS (Netherlands)

    Kroon, Renee; Lenes, Martijn; Hummelen, Jan C.; Blom, Paul W.M.; Boer, Bert de

    2008-01-01

    During the last decade the field of polymer photovoltaics has seen a tremendous improvement in both device efficiency and understanding of the underlying physical processes. One has come to a point in which the prototypical large bandgap material system P3HT:PCBM is nearing optimal device performanc

  20. Study of lineal and non-lineal transmission of an optical fiber Sagnac interferometer as a bidirectional device

    International Nuclear Information System (INIS)

    The optical fiber Sagnac interferometer is a versatile system that has been investigated for a variety of applications such as optical switchers, filters, demultiplexers and passive mode-locked laser. In many cases, this arrangement is designed using a symmetrical coupler with two of their ports connected making a loop and generally the analysis have been focused in the transmission of the signal propagated in only one direction. Therefore in the present work a complementary study of the system considering the analysis for the lineal and non-lineal transmission as a bidirectional device has been performed. The experimental setup consists of different optical fiber lengths inside the cavity loop (between 100 and 500 m) with highly twisted singlemode fiber, a quarter wave retarder placed asymmetrically in one arm and a 50/50 coupler. The results have shown that for low optical powers, it is possible to adjust the system transmission in both propagation directions with the rotation of the retarder wave. On the other hand, in high optical power levels, this arrangement showed that the transmission increases slowly for the case when both the input and the output beams have the same polarization. This behavior can be used for pedestal suppression in a light pulse. Furthermore, for the case when the output signal polarization is orthogonal respect to the input one, the transmission changes quite fast. This effect can be used for applications such as the passive mode-locking.

  1. Optical Fiber Communication Devices Using Analysis%光纤通信中光纤器件的运用分析

    Institute of Scientific and Technical Information of China (English)

    王兴晨

    2011-01-01

    Pipeline communication systems,long distance,high-speed,high-capacity information transmission needs of rapid growth,which is fiber-optic device performance and functionality made more stringent requirements.The following article in the common optical devices,for example,fiber optic devices for optical fiber communications in the use of analysis and the development of its fiber-optic devices to be addressed to the device for optical fiber communications in the practice of the use to be clear.%管线通信系统中,长距离、高速率、大容量信息传输需求迅速增长,这对光纤器件的性能和功能提出了更为严格的要求。下面本文就以常见的光纤器件为例,对光纤通信中光纤器件的运用进行分析,并就其光纤器件的发展方向加以论述,以对光纤器件在光纤通信中的实践运用加以明确。

  2. Eat-by-light: fiber-optic and micro-optic devices for food safety and quality assessment

    Science.gov (United States)

    Mignani, A. G.; Ciaccheri, L.; Cucci, C.; Mencaglia, A. A.; Cimato, A.; Attilio, C.; Thienpont, H.; Ottevaere, H.; Paolesse, R.; Mastroianni, M.; Monti, D.; Buonocore, G.; Del Nobile, A.; Mentana, A.; Dall'Asta, C.; Faccini, A.; Galaverna, G.; Dossena, A.

    2007-07-01

    A selection of fiber-optic and micro-optic devices is presented designed and tested for monitoring the quality and safety of typical foods, namely the extra virgin olive oil, the beer, and the milk. Scattered colorimetry is used for the authentication of various types of extra virgin olive oil and beer, while a fiber-optic-based device for UV-VIS-NIR absorption spectroscopy is exploited in order to obtain the hyperspectral optical signature of olive oil. This is done not only for authentication purposes, but also so as to correlate the spectral data with the content of fatty acids that are important nutritional factors. A micro-optic sensor for the detection of olive oil aroma is presented. It is capable of distinguishing different ageing levels of extra virgin olive oil. It shows effective potential for acting as a smart cap of bottled olive oil in order to achieve a non-destructive olfactory perception of oil ageing. Lastly, a compact portable fluorometer is experimented for the rapid monitoring of the carcinogenic M1 aflatoxin in milk.

  3. Eat-by-light fiber-optic and micro-optic devices for food quality and safety assessment

    Science.gov (United States)

    Mignani, A. G.; Ciaccheri, L.; Cucci, C.; Mencaglia, A. A.; Cimato, A.; Attilio, C.; Thienpont, H.; Ottevaere, H.; Paolesse, R.; Mastroianni, M.; Monti, D.; Buonocore, G.; Del Nobile, A.; Mentana, A.; Grimaldi, M. F.; Dall'Asta, C.; Faccini, A.; Galaverna, G.; Dossena, A.

    2007-06-01

    A selection is presented of fiber-optic and micro-optic devices that have been designed and tested for guaranteeing the quality and safety of typical foods, such as extra virgin olive oil, beer, and milk. Scattered colorimetry is used to authenticate various types of extra virgin olive oil and beer, while a fiber-optic-based device for UV-VIS-NIR absorption spectroscopy is exploited in order to obtain the hyperspectral optical signature of olive oil. This is done not only for authentication purposes, but also so as to correlate the spectral data with the content of fatty acids, which are important nutritional factors. A micro-optic sensor for the detection of olive oil aroma that is capable of distinguishing different ageing levels of extra virgin olive oil is also presented. It shows effective potential for acting as a smart cap of bottled olive oil in order to achieve a non-destructive olfactory perception of oil ageing. Lastly, a compact portable fluorometer for the rapid monitoring of the carcinogenic M1 aflatoxin in milk, is experimented.

  4. Bandgap engineering of graphene decorated with randomly distributed ZnO nano-seed

    Science.gov (United States)

    Al-Amin, Chowdhury; Vabbina, Phani Kiran; Karabiyik, Mustafa; Sinha, Raju; Pala, Nezih

    2016-05-01

    In this paper, we have experimentally demonstrated the engineering of semi-metal single layer CVD Graphene's bandgap by decorating with randomly distributed ZnO nano-seed grown by sonication of Zinc acetate dehydrate. The proximity of nanoparticles and Graphene breaks Graphene's sublattice symmetry and opens-up a bandgap. The 2-D/G ratio of Raman spectroscopy of decorated Graphene along with a peak at 432.39 cm-1 confirmed presence of ZnO on single layer Graphene. The introduced bandgap was measured from the slope of Arrhenius plot. Graphene with significant bandgap introduced by the proposed methods could be used for devices intended for digital and logic applications.

  5. 77 FR 65713 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Science.gov (United States)

    2012-10-30

    ... IP (Singapore) Pte. Ltd. of Singapore; Avago Technologies General IP (Singapore) Pte. Ltd. of Singapore; and Avago Technologies U.S. Inc. of San Jose, California. Letters supplementing the complaint...: Avago Technologies Fiber IP, (Singapore) Pte. Ltd., 1 Yishun Avenue 7, Singapore 768923....

  6. ZnMgO by APCVD Enabling High-Performance Mid-bandgap CIGS on Polyimide Modules: October 2009--October 2010

    Energy Technology Data Exchange (ETDEWEB)

    Woods, L.

    2011-04-01

    This Pre-Incubator project was designed to increase the 'real world' CIGS based photovoltaic module performance and decrease the Levelized Cost of Energy (LCOE) of systems utilizing those modules compared to our traditional CIGS based photovoltaic modules. This was enabled by a) increasing the CIGS bandgap and b) developing better matched device finishing layers to the mid-bandgap CIGS based photovoltaics; including window and buffer layers (and eventually the TCO). Incremental progress in the novel device performance was demonstrated throughout the program, and ultimately achieved performance results that exceeded the milestones ahead of schedule. Metal-oxide buffer layer devices with mid-bandgap CIGS alloys on polyimide substrates were produced with efficiencies of over 12%. Corresponding mid-bandgap devices with CdS buffers produced over 13% efficient devices. Furthermore, no obvious degradation in the device performance has been observed to date, after proper storage ambient of the different types of unencapsulated devices were identified.

  7. Power Analysis and Experimental Study of the Fiber Null Coupler with an Acousto-optic Device

    Institute of Scientific and Technical Information of China (English)

    WU Lei; ZHENG Yuan; QI Jiang; PU Hongtu; CHEN Shuqiang

    2002-01-01

    A single-mode fiber acousto-optic (AO) switch based on a null coupler at wavelength of 1.55 μm is reported.According to the coupled mode theory,power distribution of the null coupler with the acoustic-wave is formulated for general case.Excess loss of 0.1 dB and the schematic graph of throughput and coupled power are obtained experimentally.

  8. Comprehensive study of an optical fiber plasmonic microsensor in a microfluidic device

    OpenAIRE

    2011-01-01

    Abstract In the last decade, surface plasmon resonance (SPR) has become a very sensitive technique for real-time detection of chemical and biochemical targets in many application areas. Considering the important needs for analyzing biomolecular reactions through automated and miniaturized components, optical fiber sensors based on the SPR effects are presently considered as an alternative in the development of microsensors. In the present work, a microfluidic system associated with...

  9. Comprehensive study of an optical fiber plasmonic microsensor in a microfluidic device

    OpenAIRE

    Makiabadi, T.; Le Nader, V.; Kanso, M.; Louarn, G.

    2011-01-01

    International audience In the last decade, surface plasmon resonance (SPR) has become a very sensitive technique for real-time detection of chemical and biochemical targets in many application areas. Considering the important needs for analyzing biomolecular reactions through automated and miniaturized components, optical fiber sensors based on the SPR effects are presently considered as an alternative in the development of microsensors. In the present work, a microfluidic system associate...

  10. Method and device for detecting impact events on a security barrier which includes a hollow rebar allowing insertion and removal of an optical fiber

    Science.gov (United States)

    Pies, Ross E.

    2016-03-29

    A method and device for the detection of impact events on a security barrier. A hollow rebar is farmed within a security barrier, whereby the hollow rebar is completely surrounded by the security barrier. An optical fiber passes through the interior of the hollow rebar. An optical transmitter and an optical receiver are both optically connected to the optical fiber and connected to optical electronics. The optical electronics are configured to provide notification upon the detection of an impact event at the security barrier based on the detection of disturbances within the optical fiber.

  11. Single mode optical fiber based devices and systems for mid-infrared light generation, communication and metrology

    Science.gov (United States)

    Kulkarni, Ojas P.

    Fiber-optic systems and devices for broadband mid-infrared light generation, communication and optical metrology are developed in this thesis. Using the nonlinear properties of low mid-infrared loss ZrF4-BaF 2-LaF3-AlF3-NaF (ZBLAN) fiber, a mid-infrared supercontinuum (SC) laser based on a thulium-doped fiber amplifier (TDFA) with spectrum extending from ˜1.9-4.5 microm is demonstrated. A higher efficiency, power-scalable, all-fiber integrated mid-infrared light source is realized capable of generating ˜0.7 W time-average power in wavelengths beyond 3.8 microm. The novelty of the laser lies in its two-step spectral shifting architecture. First, amplified laser diode pulses at 1.55 microm are used to generate a SC extending beyond 2 microm in standard SMF using modulation-instability initiated pulse break-up. A TDFA stage is then used to amplify the ˜2 microm components in the standard SMF continuum. By subsequently coupling the amplified ˜2 microm pulses in to a ZBLAN fiber, an SC with up to ˜2.6 W average power, and ˜9% optical conversion efficiency from the power-amp pump to mid-IR output is demonstrated. The two-step methodology leads to extension in the long wavelength edge of the SC from 4.2 microm to ˜4.5 microm, compared to previously demonstrated systems and ˜2.5 times higher optical efficiency in generating wavelengths beyond 3.8 microm. Numerical simulations are also presented based on solving the generalized non-linear Schrodinger equation to verify and extend experimental results. A broadband surface-normal optical modulator for communication applications with operation demonstrated over 1200--2400 nm is also presented. The modulator uses free-carrier effect in GaAs and mode selectivity of SMF to generate up to ˜43% modulation depth with a maximum operating speed of ˜270 MHz. The broad wavelength range of operation of the modulator can potentially enable higher throughput wavelength-division multiplexed optical network architectures based on

  12. Bandgap tunability at single-layer molybdenum disulphide grain boundaries

    KAUST Repository

    Huang, Yu Li

    2015-02-17

    Two-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties of interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle energy gap to be 2.40±0.05 eV for single-layer, 2.10±0.05 eV for bilayer and 1.75±0.05 eV for trilayer molybdenum disulphide, which were directly grown on a graphite substrate by chemical vapour deposition method. More interestingly, we report an unexpected bandgap tunability (as large as 0.85±0.05 eV) with distance from the grain boundary in single-layer molybdenum disulphide, which also depends on the grain misorientation angle. This work opens up new possibilities for flexible electronic and optoelectronic devices with tunable bandgaps that utilize both the control of two-dimensional layer thickness and the grain boundary engineering.

  13. Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes

    Science.gov (United States)

    Comfort, Everett; Lee, Ji Ung

    2016-06-01

    The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical features of semiconductor device manufacturing, can dramatically shrink (renormalize) the bandgap. We demonstrate this in quasi-one-dimensional semiconducting carbon nanotubes. Specifically, we use a four-gated device, configured as a p-n diode, to investigate the fundamental electronic structure of individual, partially supported nanotubes of varying diameter. The four-gated construction allows us to combine both electrical and optical spectroscopic techniques to measure the bandgap over a wide doping range.

  14. Materials Research Society Symposium Proceedings. Volume 339: Diamond, SiC and nitride wide bandgap semiconductors

    Science.gov (United States)

    Carter, Calvin H.; Gildenblat, Gennady; Nakamura, Shuji; Nemanich, Robert J.

    1994-04-01

    This symposium was directed toward the potential of using diamond, SiC, and nitride wide bandgap semiconductors. The symposium emphasized materials issues related to the semiconducting properties of these wide bandgap materials. Both experimental and theoretical studies were presented. Solid advances were reported in the growth techniques of all three materials groups. Contributions demonstrated the critical importance of surfaces, interfaces, doping, defects, and impurities Reports demonstrated potential device applications ranging from unique electronic devices to blue/UV light emitters/detectors and even novel structures employing a negative electron affinity. The overall theme of the symposium was that materials research into wide bandgap semiconductors will make available exciting new applications, and that we are just beginning to understand the potential of these materials.

  15. Tuning the hybridization bandgap by meta-molecules with in-unit interaction

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yongqiang; Li, Yunhui, E-mail: liyunhui@tongji.edu.cn; Wu, Qian; Jiang, Haitao; Zhang, Yewen; Chen, Hong [Key Laboratory of Advanced Micro-Structured Materials, Ministry of Education, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2015-09-07

    In this paper, we demonstrate that the hybridization bandgap (HBG) can be tuned conveniently by deep subwavelength meta-molecules with in-unit interaction. Spontaneous-emission-cancellation-like (SEC-like) effect is realized in a meta-molecule by introducing the destructive interference of two detuned meta-atoms. The meta-atoms consisting of subwavelength zero-index-metamaterial-based resonators are side-coupled to a microstrip. Compared to conventional HBG configurations, the presence of in-unit interaction between meta-atoms provides more flexibility in tuning the bandgap properties, keeping the device volume almost unchanged. Both numerical simulations and microwave experiments confirm that the width, depth, and spectrum shape of HBG can be tuned by simply introducing SEC-like interaction into the meta-molecule. Due to these features, our design may be promising to be applied in microwave or optics communications systems with strict limitation of device volume and flexible bandgap properties.

  16. Wide Bandgap Nanostructured Space Photovoltaics Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Firefly, in collaboration with Rochester Institute of Technology, proposes an STTR program for the development of a wide-bandgap GaP-based space solar cell capable...

  17. An Azulene-Containing Low Bandgap Small Molecule for Organic Photovoltaics with High Open-Circuit Voltage.

    Science.gov (United States)

    Chen, Yao; Zhu, Youqin; Yang, Daobin; Zhao, Suling; Zhang, Lei; Yang, Lin; Wu, Jianglin; Huang, Yan; Xu, Zheng; Lu, Zhiyun

    2016-10-01

    A simple azulene-containing squaraine dye (AzUSQ) showing bandgap of 1.38 eV and hole mobility up to 1.25×10(-4)  cm(2)  V(-1)  s(-1) was synthesized. With its low bandgap, an organic photovoltaic (OPV) device based on it has been made that exhibits an impressive open-circuit voltages (Voc ) of 0.80 V. Hence, azulene might be a promising structural unit to construct OPV materials with simultaneous low bandgap, high hole mobility and high Voc .

  18. Advanced devices based on fibers, integrated optics and liquid crystals for WDM networks

    OpenAIRE

    Contreras Lallana, Pedro

    2011-01-01

    The increment of bandwidth required for new services offered to users make necessary the use of optical fibres in data transmission. Glass optical fibres are widely used in long distance communications, and there are many devices implemented for using in these networks, but these technologies are sometimes expensive for their used in local loops. Different systems implemented over the established technology are used for increasing local loops bandwidth, but more services are demanded at home....

  19. Tuning the Bandgap of a Ternary Semiconductor

    OpenAIRE

    2005-01-01

    This interactive tutorial covers the following: The relationship between bandgap energy and the long wavelength cut-off of a detector response., The changes expected in long wavelength cut-off in response to changes in alloy composition and operating temperature.The interactions in this tutorial involve students using sliding scales to change the values of alloy composition, bandgap energy, cut-off wavelength, temperature, and intrinsic carrier concentration, and make observations of correspo...

  20. Towards in vivo laser coagulation and concurrent optical coherence tomography through double-clad fiber devices

    Science.gov (United States)

    Beaudette, Kathy; Lo, William; Villiger, Martin; Shishkov, Milen; Godbout, Nicolas; Bouma, Brett E.; Boudoux, Caroline

    2016-03-01

    There is a strong clinical need for an optical coherence tomography (OCT) system capable of delivering concurrent coagulation light enabling image-guided dynamic laser marking for targeted collection of biopsies, as opposed to a random sampling, to reduce false-negative findings. Here, we present a system based on double-clad fiber (DCF) capable of delivering pulsed laser light through the inner cladding while performing OCT through the core. A previously clinically validated commercial OCT system (NVisionVLE, Ninepoint Medical) was adapted to enable in vivo esophageal image-guided dynamic laser marking. An optimized DCF coupler was implemented into the system to couple both modalities into the DCF. A DCF-based rotary joint was used to couple light to the spinning DCF-based catheter for helical scanning. DCF-based OCT catheters, providing a beam waist diameter of 62μm at a working distance of 9.3mm, for use with a 17-mm diameter balloon sheath, were used for ex vivo imaging of a swine esophagus. Imaging results using the DCF-based clinical system show an image quality comparable with a conventional system with minimal crosstalk-induced artifacts. To further optimize DCF catheter optical design in order to achieve single-pulse marking, a Zemax model of the DCF output and its validation are presented.

  1. 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1−ybuffers

    International Nuclear Information System (INIS)

    Single-junction, lattice-mismatched In0.69Ga0.31As thermophotovoltaic (TPV) devices each with abandgap of 0.6 eV are grown on InP substrate by metal—organic chemical vapour deposition (MOCVD). Compositionally undulating step-graded InAsyP1−y buffer layers with a lattice mismatch of ∼1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate. With an optimized buffer thickness, the In0.69Ga0.31As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion. High-performance single-junction devices are demonstrated, with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm2, which are measured underthe standard solar simulator of air mass 1.5-global (AM 1.5 G). (condensed matter: structural, mechanical, and thermal properties)

  2. Electrical and Optical Measurements of the Bandgap Energy of a Light-Emitting Diode

    Science.gov (United States)

    Petit, Matthieu; Michez, Lisa; Raimundo, Jean-Manuel; Dumas, Philippe

    2016-01-01

    Semiconductor materials are at the core of electronics. Most electronic devices are made of semiconductors. The operation of these components is well described by quantum physics which is often a difficult concept for students to understand. One of the intrinsic parameters of semiconductors is their bandgap energy E[subscript g]. In the case of…

  3. Tunable all-optical devices based on liquid-filled photonic crystal fibers

    DEFF Research Database (Denmark)

    Rosberg, Christian Romer; Bennet, Francis; Neshev, Dragomir N.;

    of discrete and nonlinear light propagation in extended two-dimensional periodic systems. We experimentally demonstrate strongly tunable beam diffraction in a triangular waveguide array created by infiltration of a high index liquid into the cladding holes of a standard PCF, and employ the thermal...... nonlinearity of the liquid to achieve beam self-defocusing at higher light intensity. Based on the observed effects we devise a compact all-optical power limiter device with tunable characteristics. The use of commercially available PCFs in combination with liquid infiltration avoids the need for specialized...... high-precision fabrication procedures, and provides high tunability and nonlinearity at moderate laser powers while taking advantage of a compact experimental setup. The increasingly broad range of PCF structures available could stimulate further efforts in applying them in discrete nonlinear optics...

  4. Effective absorption coefficient for graded band-gap semiconductors and the expected photocurrent density in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Acevedo, Arturo [CINVESTAV del IPN, Electrical Engineering Department, Avenida IPN No. 2508, 07360 Mexico, D. F. (Mexico)

    2009-01-15

    A simple model for the generation of carriers by photons incident on a (linearly) decreasing band-gap material, such as has been described in recent CIGS solar cells, is developed. The model can be generalized for different cases such as increasing band-gap grading or for having a more complex band-gap profile. The model developed for direct band semiconductors such as CIGS or AlGaAs allows us to define an effective absorption coefficient, so that the ideal photocurrent density can be calculated in a similar manner as for solar cells with non-graded band-gap materials. We show that this model gives completely different results as those expected from intuitive approaches for calculating this ideal photocurrent density. We also show that grading of the band-gap of the absorbing material in solar cells makes the photocurrent less sensitive to the total band-gap change, in such a way that the design of the band-gap variation can be more flexible in order to have other advantages such as higher built-in voltage or higher back surface field in the device structure. (author)

  5. Self-assembled guanine ribbons as wide-bandgap semiconductors

    Science.gov (United States)

    di Felice, Rosa; Calzolari, Arrigo; Molinari, Elisa; Garbesi, Anna; Rinaldi, Ross; Maruccio, Giuseppe; Cingolani, Roberto

    2002-03-01

    We present a new class of biomolecular wide-bandgap semiconductors, that spontaneously form by the self-assembling of deoxyguanosine molecules (a modified DNA base) in the solid state. Their deposition onto planar metallic nanocircuits allows the fabrication of hybrid nanodiodes and metal/semiconductor/metal devices. By means of first-principle calculations, we describe the structure and the electronic properties of stacked guanine ribbons. We discuss the formation of extended Bloch orbitals, resulting from the superposition of base-localized states, as a function of H-bonding and π-π coupling. The oveall band-like conduction is affected by a dipole-field that spontaneously arise along the ribb n axis. Our theoretical model explains both the basic transport mechanism and the current-voltage characteristics of the devices.

  6. Electric gating induced bandgaps and enhanced Seebeck effect in zigzag bilayer graphene ribbons

    Science.gov (United States)

    Vu, Thanh-Tra; Tran, Van-Truong

    2016-08-01

    We theoretically investigate the effect of a transverse electric field generated by side gates and a vertical electric field generated by top/back gates on energy bands and transport properties of zigzag bilayer graphene ribbons (Bernal stacking). Using atomistic tight binding calculations and Green’s function formalism we demonstrate that a bandgap is opened when either field is applied and even enlarged under simultaneous influence of the two fields. Interestingly, although vertical electric fields are widely used to control the bandgap in bilayer graphene, here we show that transverse fields exhibit a more positive effect in terms of modulating a larger range of bandgap and retaining good electrical conductance. The Seebeck effect is also demonstrated to be enhanced strongly—by about 13 times for a zigzag bilayer graphene ribbon with 16 chain lines. These results may motivate new designs of devices made of bilayer graphene ribbons using electric gates.

  7. The impact of sodium on the sub-bandgap states in CZTSe and CZTS

    Science.gov (United States)

    Gershon, By Talia; Lee, Yun Seog; Mankad, Ravin; Gunawan, Oki; Gokmen, Tayfun; Bishop, Doug; McCandless, Brian; Guha, Supratik

    2015-03-01

    We compare the optically active sub-bandgap states in polycrystalline Cu2ZnSnSe4 (CZTSe) and Cu2ZnSnS4 (CZTS) thin films as a function of sodium content. In all samples studied, we find that CZTSe has a lower concentration of radiative defect-derived states compared to CZTS and that the states are also shallower in CZTSe compared to CZTS. Further, we find that sodium impacts the relative ratios of two sub-bandgap peaks in the 4 K photoluminescence (PL) spectra of CZTSe (one at ˜0.85 eV and another at ˜0.92 eV). We propose that both of these sub-bandgap peaks stem from intrinsic point defects in CZTSe rather than from electronic states introduced by sodium; this is supported by a measurement on a sodium-free single-crystal of CZTSe. We also show that films with stronger emission through the shallower sub-bandgap states at 4 K display room-temperature PL closer to the bandgap energy. For all sodium quantities studied, one broad PL peak is observed in the 4 K PL spectrum of CZTS which also shifts towards the band edge with increasing sodium. A reduced overall defect density and the fact that the states that are present are shallower together may help account for the lower VOC deficits in CZTSe and the empirical observations that sodium improves device performance.

  8. Water Fibers

    CERN Document Server

    Douvidzon, Mark L; Martin, Leopoldo L; Carmon, Tal

    2016-01-01

    Fibers constitute the backbone of modern communication and are used in laser surgeries; fibers also genarate coherent X-ray, guided-sound and supercontinuum. In contrast, fibers for capillary oscillations, which are unique to liquids, were rarely considered in optofluidics. Here we fabricate fibers by water bridging an optical tapered-coupler to a microlensed coupler. Our water fibers are held in air and their length can be longer than a millimeter. These hybrid fibers co-confine two important oscillations in nature: capillary- and electromagnetic-. We optically record vibrations in the water fiber, including an audio-rate fundamental and its 3 overtones in a harmonic series, that one can hear in soundtracks attached. Transforming Micro-Electro-Mechanical-Systems [MEMS] to Micro-Electro-Capillary-Systems [MECS], boosts the device softness by a million to accordingly improve its response to minute forces. Furthermore, MECS are compatible with water, which is a most important liquid in our world.

  9. Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Katahara, John K.; Hillhouse, Hugh W., E-mail: h2@uw.edu [Department of Chemical Engineering, University of Washington, Seattle, Washington 98105 (United States)

    2014-11-07

    A unified model for the direct gap absorption coefficient (band-edge and sub-bandgap) is developed that encompasses the functional forms of the Urbach, Thomas-Fermi, screened Thomas-Fermi, and Franz-Keldysh models of sub-bandgap absorption as specific cases. We combine this model of absorption with an occupation-corrected non-equilibrium Planck law for the spontaneous emission of photons to yield a model of photoluminescence (PL) with broad applicability to band-band photoluminescence from intrinsic, heavily doped, and strongly compensated semiconductors. The utility of the model is that it is amenable to full-spectrum fitting of absolute intensity PL data and yields: (1) the quasi-Fermi level splitting, (2) the local lattice temperature, (3) the direct bandgap, (4) the functional form of the sub-bandgap absorption, and (5) the energy broadening parameter (Urbach energy, magnitude of potential fluctuations, etc.). The accuracy of the model is demonstrated by fitting the room temperature PL spectrum of GaAs. It is then applied to Cu(In,Ga)(S,Se){sub 2} (CIGSSe) and Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) to reveal the nature of their tail states. For GaAs, the model fit is excellent, and fitted parameters match literature values for the bandgap (1.42 eV), functional form of the sub-bandgap states (purely Urbach in nature), and energy broadening parameter (Urbach energy of 9.4 meV). For CIGSSe and CZTSSe, the model fits yield quasi-Fermi leveling splittings that match well with the open circuit voltages measured on devices made from the same materials and bandgaps that match well with those extracted from EQE measurements on the devices. The power of the exponential decay of the absorption coefficient into the bandgap is found to be in the range of 1.2 to 1.6, suggesting that tunneling in the presence of local electrostatic potential fluctuations is a dominant factor contributing to the sub-bandgap absorption by either purely electrostatic (screened Thomas-Fermi) or

  10. Petahertz optical drive with wide-bandgap semiconductor

    Science.gov (United States)

    Mashiko, Hiroki; Oguri, Katsuya; Yamaguchi, Tomohiko; Suda, Akira; Gotoh, Hideki

    2016-08-01

    High-speed photonic and electronic devices at present rely on radiofrequency electric fields to control the physical properties of a semiconductor, which limits their operating speed to terahertz frequencies (1012 Hz ref. ). Using the electric field from intense light pulses, however, could extend the operating frequency into the petahertz regime (1015 Hz ref. ). Here we demonstrate optical driving at a petahertz frequency in the wide-bandgap semiconductor gallium nitride. Few-cycle near-infrared pulses are shown to induce electric interband polarization though a multiphoton process. Dipole oscillations with a periodicity of 860 as are revealed in the gallium nitride electron and hole system by using the quantum interference between the two transitions from the valence and conduction band states, which are probed by an extremely short isolated attosecond pulse with a coherent broadband spectrum. In principle, this shows that the conductivity of the semiconductor can be manipulated on attosecond timescales, which corresponds to instantaneous light-induced switching from insulator to conductor. The resultant dipole frequency reaches 1.16 PHz, showing the potential for future high-speed signal processing technologies based on wide-bandgap semiconductors.

  11. Research on micro-sized acoustic bandgap structures.

    Energy Technology Data Exchange (ETDEWEB)

    Fleming, James Grant; McCormick, Frederick Bossert; Su, Mehmet F.; El-Kady, Ihab Fathy; Olsson, Roy H., III; Tuck, Melanie R.

    2010-01-01

    Phononic crystals (or acoustic crystals) are the acoustic wave analogue of photonic crystals. Here a periodic array of scattering inclusions located in a homogeneous host material forbids certain ranges of acoustic frequencies from existence within the crystal, thus creating what are known as acoustic (or phononic) bandgaps. The vast majority of phononic crystal devices reported prior to this LDRD were constructed by hand assembling scattering inclusions in a lossy viscoelastic medium, predominantly air, water or epoxy, resulting in large structures limited to frequencies below 1 MHz. Under this LDRD, phononic crystals and devices were scaled to very (VHF: 30-300 MHz) and ultra (UHF: 300-3000 MHz) high frequencies utilizing finite difference time domain (FDTD) modeling, microfabrication and micromachining technologies. This LDRD developed key breakthroughs in the areas of micro-phononic crystals including physical origins of phononic crystals, advanced FDTD modeling and design techniques, material considerations, microfabrication processes, characterization methods and device structures. Micro-phononic crystal devices realized in low-loss solid materials were emphasized in this work due to their potential applications in radio frequency communications and acoustic imaging for medical ultrasound and nondestructive testing. The results of the advanced modeling, fabrication and integrated transducer designs were that this LDRD produced the 1st measured phononic crystals and phononic crystal devices (waveguides) operating in the VHF (67 MHz) and UHF (937 MHz) frequency bands and established Sandia as a world leader in the area of micro-phononic crystals.

  12. Hollow core photonic bandgap fibers for medical applications

    OpenAIRE

    Vural, Mert

    2009-01-01

    Ankara : The Department of Materials Science and Nanotechnology and the Institute of Engineering and Sciences of Bilkent University, 2009. Thesis (Master's) -- Bilkent University, 2009. Includes bibliographical references leaves 87-95. Vural, Mert Master's

  13. Fabrication and optical properties of lead silicate glass holey fibers

    OpenAIRE

    Ebendorff-Heidepriem, H.; Petropoulos, P.; Moore, R.; Frampton, K.; Monro, T.M.

    2003-01-01

    Since the first microstructured optical fiber was made in 1996, holey fibers (HFs) have attracted growing attention. Compared with conventional fibers, they offer a significantly broader range of optical properties such as photonic bandgap guiding, shift of anomalous dispersion into the visible, high nonlinearity in small core fibers and high power delivery in large mode area fibers. Therefore, HFs have a wide range of potential applications in optical technologies. The vast majority of resea...

  14. Main Factors for Affecting Photonic Bandgap of Photonic Crystals

    Institute of Scientific and Technical Information of China (English)

    LI Xia; XUE Wei; JIANG Yu-rong; YU Zhi-nong; WANG Hua-qing

    2007-01-01

    The factors affecting one dimensional (1D) and two dimensional (2D) photonic crystals (PhCs) are systemically analyzed in this paper by numerical simulation.Transfer matrix method (TMM) is employed for 1D PCs, both finite difference time domain method (FDTD) and plane wave expansion method (PWE) are employed for 2D PCs.The result shows that the photonic bandgaps (PBG) are directly affected by crystal type, crystal lattice constant, modulation of refractive index and periodicity, and it is should be useful for design of different type photonic crystals with the required PBG and functional devices.Finally, as an example, a near-IR 1D PCs narrow filter was designed.

  15. Hybrid photonic-bandgap accelerating cavities

    CERN Document Server

    Di Gennaro, E; Savo, S; Andreone, A; Masullo, M R; Castaldi, G; Gallina, I; Galdi, V

    2009-01-01

    In a recent investigation, we studied two-dimensional point-defected photonic bandgap cavities composed of dielectric rods arranged according to various representative periodic and aperiodic lattices, with special emphasis on possible applications to particle acceleration (along the longitudinal axis). In this paper, we present a new study aimed at highlighting the possible advantages of using hybrid structures based on the above dielectric configurations, but featuring metallic rods in the outermost regions, for the design of extremely-high quality factor, bandgap-based, accelerating resonators. In this framework, we consider diverse configurations, with different (periodic and aperiodic) lattice geometries, sizes, and dielectric/metal fractions. Moreover, we also explore possible improvements attainable via the use of superconducting plates to confine the electromagnetic field in the longitudinal direction. Results from our comparative studies, based on numerical full-wave simulations backed by experimental...

  16. Phonon wave interference and thermal bandgap materials.

    Science.gov (United States)

    Maldovan, Martin

    2015-07-01

    Wave interference modifies phonon velocities and density of states, and in doing so creates forbidden energy bandgaps for thermal phonons. Materials that exhibit wave interference effects allow the flow of thermal energy to be manipulated by controlling the material's thermal conductivity or using heat mirrors to reflect thermal vibrations. The technological potential of these materials, such as enhanced thermoelectric energy conversion and improved thermal insulation, has fuelled the search for highly efficient phonon wave interference and thermal bandgap materials. In this Progress Article, we discuss recent developments in the understanding and manipulation of heat transport. We show that the rational design and fabrication of nanostructures provides unprecedented opportunities for creating wave-like behaviour of heat, leading to a fundamentally new approach for manipulating the transfer of thermal energy.

  17. Advances in Fiber Optic Sensors Technology Development for temperature and strain measurements in Superconducting magnets and devices

    CERN Document Server

    Chiuchiolo, A.; Bajko, M.; Bottura, L.; Consales, M.; Cusano, A.; Giordano, M.; Perez, J. C.

    2016-01-01

    Fiber optic sensors (FOS) based on Fiber Bragg Grating (FBG) technology have been embedded in the coils of the Short Model Coil (SMC) magnet. The FBG sensitivity to both temperature and strain required the development of a solution able to separate the mechanical and temperature effects. This work presents the feasibility study of the implementation of embedded FBG sensors for the temperature and strain monitoring of the 11 T type conductor. We aim to monitor and register these...

  18. Two-dimensional Kagome photonic bandgap waveguide

    DEFF Research Database (Denmark)

    Nielsen, Jens Bo; Søndergaard, Thomas; Libori, Stig E. Barkou;

    2000-01-01

    The transverse-magnetic photonic-bandgap-guidance properties are investigated for a planar two-dimensional (2-D) Kagome waveguide configuration using a full-vectorial plane-wave-expansion method. Single-moded well-localized low-index guided modes are found. The localization of the optical modes...... is investigated with respect to the width of the 2-D Kagome waveguide, and the number of modes existing for specific frequencies and waveguide widths is mapped out....

  19. Graded-Bandgap Solar Cells Using All-Electrodeposited ZnS, CdS and CdTe Thin-Films

    OpenAIRE

    Obi K. Echendu; Imyhamy M. Dharmadasa

    2015-01-01

    A 3-layer graded-bandgap solar cell with glass/FTO/ZnS/CdS/CdTe/Au structure has been fabricated using all-electrodeposited ZnS, CdS and CdTe thin layers. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form glass/FTO/ZnS/CdS/CdTe/Au solar cell resulted in the formation of this 3-layer graded-bandgap device structure. This has yielded corresponding impro...

  20. Anisotropic nanostructures directly written by fs pulses in wide-bandgap materials

    OpenAIRE

    Baumberg, J. J.; Mills, J. D.; Kazansky, P. G.; Bricchi, E.

    2003-01-01

    The use of lasers to directly pattern optoelectronic devices primarily utilizes direct irradiation by UV light. We present here an alternative route using multi-photon absorption within a spherical focus in 3D space, thus allowing complex embedded structures to be directly written. In wide-bandgap materials such as chalcogenide, fluoride and silica glasses, our observations suggest free electrons are produced within the focus of a high-power infrared ultrashort pulse. The anisotropic interact...

  1. High peak-power monolithic femtosecond ytterbium fiber chirped pulse amplifier with a spliced-on hollow core fiber compressor.

    Science.gov (United States)

    Verhoef, A J; Jespersen, K; Andersen, T V; Grüner-Nielsen, L; Flöry, T; Zhu, L; Baltuška, A; Fernández, A

    2014-07-14

    We demonstrate a monolithic Yb-fiber chirped pulse amplifier that uses a dispersion matched fiber stretcher and a spliced-on hollow core photonic bandgap fiber compressor. For an output energy of 77 nJ, 220 fs pulses with 92% of the energy contained in the main pulse, can be obtained with minimal nonlinearities in the system. 135 nJ pulses are obtained with 226 fs duration and 82 percent of the energy in the main pulse. Due to the good dispersion match of the stretcher to the hollow core photonic bandgap fiber compressor, the duration of the output pulses is within 10% of the Fourier limited duration. PMID:25090494

  2. Electronic transitions in the bandgap of copper indium gallium diselenide polycrystalline thin films

    Science.gov (United States)

    Heath, Jennifer Theresa

    The electronic properties of polycrystalline copper indium gallium diselenide thin films have been investigated, with emphasis on understanding the distribution and origin of electronic states in the bandgap. The samples studied were working photovoltaic devices with the structure ZnO/CdS/CuIn1-xGa xSe2/Mo, and photovoltaic efficiencies ranging from 8 to 16%. The CdS layer and the p-type CuIn1-xGa xSe2 film create the n+- p junction at the heart of these devices. The samples were investigated using four techniques based on the electrical response of the junction: admittance spectroscopy, drive level capacitance profiling, transient photocapacitance spectroscopy, and transient photocurrent spectroscopy. From these measurements the free carrier densities, defect densities within the bandgap, spatial uniformity, and minority carrier mobilities have been deduced. The sub-bandgap response from the CuIn1-xGaxSe2 film was dominated by two defects. One exhibited a thermal transition to the valence band with an activation energy ranging between 0.1 and 0.3 eV and thermal emission prefactors obeying the Meyer-Neldel rule. The second was detected as an optical transition 0.8 eV from the valence band edge. Neither of these defects exhibited densities that varied systematically with gallium content, implying that they are not directly connected with the group III elements in these alloys. The defect densities also do not clearly correlate with the photovoltaic device performance; however, the position of the 0.8 eV defect lies nearer to mid-gap in the higher gallium, and hence higher band gap, material. This implies that it may be a more important recombination center in these devices and may be partially responsible for the reduced photovoltaic efficiencies observed when Ga/(In + Ga) > 0.4. An additional defect response was observed near mid-gap in films grown by processes known to produce lower quality devices. The influence of defects located at grain boundaries was also

  3. A new photonic bandgap cover for a patch antenna with a photonic bandgap substrate

    Institute of Scientific and Technical Information of China (English)

    林青春; 朱方明; 何赛灵

    2004-01-01

    A new photonic bandgap (PBG) cover for a patch antenna with a photonic bandgap substrate is introduced. The plane wave expansion method and the FDTD method were used to calculate such an antenna system. Numerical results for the input return loss, radiation pattern, surface wave, and the directivity of the antennas are presented. A comparison between the conventional patch antenna and the new PBG antenna is given. It is shown that the new PBG cover is very efficient for improving the radiation directivity. The physical reasons for the improvement are also given.

  4. Dissipative rogue waves induced by long-range chaotic multi-pulse interactions in a fiber laser with a topological insulator-deposited microfiber photonic device.

    Science.gov (United States)

    Liu, Meng; Cai, Ze-Rong; Hu, Song; Luo, Ai-Ping; Zhao, Chu-Jun; Zhang, Han; Xu, Wen-Cheng; Luo, Zhi-Chao

    2015-10-15

    We reported on the generation of dissipative rogue waves (DRWs) induced by long-range chaotic multi-pulse interactions in a fiber laser based on a topological insulator (TI)-deposited microfiber photonic device. By virtue of the simultaneous saturable absorption effect and high nonlinearity provided by the TI-deposited microfiber, a localized, chaotic multi-pulse wave packet with strong long-range nonlinear interactions could be obtained, which gives rise to the formation of DRWs. The results might enhance the understanding of DRWs in optical systems, and further demonstrated that the TI-deposited microfiber could be considered as an excellent photonic device with both saturable absorption and highly nonlinear effects for the application field of nonlinear optics. PMID:26469615

  5. Bandgap Engineering in High-Efficiency Multijunction Concentrator Cells

    Energy Technology Data Exchange (ETDEWEB)

    King, R. R.; Sherif, R. A.; Kinsey, G. S.; Kurtz, S.; Fetzer, C. M.; Edmondson, K. M.; Law, D. C.; Cotal, H. L.; Krut, D. D.; Ermer, J. H.; Karam, N. H.

    2005-08-01

    This paper discusses semiconductor device research paths under investigation with the aim of reaching the milestone efficiency of 40%. A cost analysis shows that achieving very high cell efficiencies is crucial for the realization of cost-effective photovoltaics, because of the strongly leveraging effect of efficiency on module packaging and balance-of systems costs. Lattice-matched (LM) GaInP/ GaInAs/ Ge 3-junction cells have achieved the highest independently confirmed efficiency at 175 suns, 25?C, of 37.3% under the standard AM1.5D, low-AOD terrestrial spectrum. Lattice-mismatched, or metamorphic (MM), materials offer still higher potential efficiencies, if the crystal quality can be maintained. Theoretical efficiencies well over 50% are possible for a MM GaInP/ 1.17-eV GaInAs/ Ge 3-junction cell limited by radiative recombination at 500 suns. The bandgap - open circuit voltage offset, (Eg/q) - Voc, is used as a valuable theoretical and experimental tool to characterize multijunction cells with subcell bandgaps ranging from 0.7 to 2.1 eV. Experimental results are presented for prototype 6-junction cells employing an active {approx}1.1-eV dilute nitride GaInNAs subcell, with active-area efficiency greater than 23% and over 5.3 V open-circuit voltage under the 1-sun AM0 space spectrum. Such cell designs have theoretical efficiencies under the terrestrial spectrum at 500 suns concentration exceeding 55% efficiency, even for lattice-matched designs.

  6. The impact of sodium on the sub-bandgap states in CZTSe and CZTS

    Energy Technology Data Exchange (ETDEWEB)

    Gershon, By Talia, E-mail: tsgersho@us.ibm.com; Lee, Yun Seog; Mankad, Ravin; Gunawan, Oki; Gokmen, Tayfun; Guha, Supratik [Physical Sciences Department, IBM T.J. Watson Research Center, 1101 Kitchawan Rd, Yorktown Heights, New York 10598 (United States); Bishop, Doug; McCandless, Brian [Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716 (United States)

    2015-03-23

    We compare the optically active sub-bandgap states in polycrystalline Cu{sub 2}ZnSnSe{sub 4} (CZTSe) and Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films as a function of sodium content. In all samples studied, we find that CZTSe has a lower concentration of radiative defect-derived states compared to CZTS and that the states are also shallower in CZTSe compared to CZTS. Further, we find that sodium impacts the relative ratios of two sub-bandgap peaks in the 4 K photoluminescence (PL) spectra of CZTSe (one at ∼0.85 eV and another at ∼0.92 eV). We propose that both of these sub-bandgap peaks stem from intrinsic point defects in CZTSe rather than from electronic states introduced by sodium; this is supported by a measurement on a sodium-free single-crystal of CZTSe. We also show that films with stronger emission through the shallower sub-bandgap states at 4 K display room-temperature PL closer to the bandgap energy. For all sodium quantities studied, one broad PL peak is observed in the 4 K PL spectrum of CZTS which also shifts towards the band edge with increasing sodium. A reduced overall defect density and the fact that the states that are present are shallower together may help account for the lower V{sub OC} deficits in CZTSe and the empirical observations that sodium improves device performance.

  7. Narrow-linewidth and tunable fiber lasers

    OpenAIRE

    Morkel, P.R.

    1993-01-01

    1. Introduction 2. Line-narrowed fiber laser devices Integral fiber reflective Bragg grating lasers Intra-cavity etalon laser 3. Tunable, line narrowed fiber laser devices Ring lasers using wavelength selective couplers Tunable lasers using bulk-optic components a) Mechanical tuning b) Electronic tuning 4. Single frequency fiber lasers Integral fiber reflective Bragg grating laser Interferometric cavity laser Injection locked laser Travellin...

  8. Highly dispersive photonic band-gap prism

    International Nuclear Information System (INIS)

    We propose the concept of a photonic band-gap (PBG) prism based on two-dimensional PBG structures and realize it in the millimeter-wave spectral regime. We recognize the highly nonlinear dispersion of PBG materials near Brillouin zone edges and utilize the dispersion to achieve strong prism action. Such a PBG prism is very compact if operated in the optical regime, ∼20μm in size for λ∼700nm, and can serve as a dispersive element for building ultracompact miniature spectrometers. copyright 1996 Optical Society of America

  9. Highly dispersive photonic band-gap prism.

    Science.gov (United States)

    Lin, S Y; Hietala, V M; Wang, L; Jones, E D

    1996-11-01

    We propose the concept of a photonic band-gap (PBG) prism based on two-dimensional PBG structures and realize it in the millimeter-wave spectral regime. We recognize the highly nonlinear dispersion of PBG materials near Brillouin zone edges and utilize the dispersion to achieve strong prism action. Such a PBG prism is very compact if operated in the optical regime, ~20 mm in size for lambda ~ 700 nm, and can serve as a dispersive element for building ultracompact miniature spectrometers. PMID:19881796

  10. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  11. Switchable Electromagnetic Bandgap Surface Wave Antenna

    Directory of Open Access Journals (Sweden)

    Qiang Bai

    2014-01-01

    Full Text Available This paper presents a novel switchable electromagnetic bandgap surface wave antenna that can support both a surface wave and normal mode radiation for communications at 2.45 GHz. In the surface wave mode, the antenna has a monopole-like radiation pattern with a measured gain of 4.4 dBi at ±49° and a null on boresight. In the normal mode, the antenna operates like a back-fed microstrip patch antenna.

  12. Fabrication and Study of the Embedded Microstructure Fiber Device%嵌入式微结构光纤器件的制作与研究

    Institute of Scientific and Technical Information of China (English)

    于海娇; 闫奇; 刘永军; 田赫; 孙伟民

    2013-01-01

    An embedded microstructure fiber device with large-core plastic cladding fibers inserted is presented.The refractive index profile of the taper end is uniform,and so is the power distribution.On the basis of the theoretical analysis,the coupling coefficient of the nearest-neighboring fibers is exponentially decreased with the decreasing diameter of the taper.The transmission loss of the device is lower when the length of the taper is longer.This kind of devices are fabricated by the fixed flame method and the movable flame method,respectively.The taper is elongated nearly five times by the movable large-hot-zone fiber-tapering system.The transmission loss of the two devices from one inserted fiber to the taper end is measured with He-Ne laser at about 632.8 nm wavelength.The loss values are about 2.63 dB with the taper length of 0.7 cm and 1.06 dB with the taper length of 3.4 cm.The influence of the taper length agrees with the theoretical analysis,and low-loss device can be achieved by improving the structure.%提出了一种基于大芯径塑料包层光纤的嵌入式微结构光纤器件,该结构的锥区末端具有均匀的折射率分布与光场分布.理论分析结果表明,耦合系数随着锥区直径的减小呈现指数形式增大,增大锥区的长度可以使器件的损耗减小.实验上采用固定式加热方法和移动式加热方法分别制作了这种器件,使用移动大热区拉锥系统可以使锥区的长度增大近5倍.利用波长632.8 nm的He-Ne激光,测试了该器件不同长度锥区的损耗,锥区长度为0.7 cm时损耗约为2.63 dB,而锥区长度为3.4cm时损耗约为1.06 dB,锥区长度对器件损耗的影响与理论分析一致,可以通过改进器件的结构实现低损耗传输.

  13. High-Temperature, Wirebondless, Ultracompact Wide Bandgap Power Semiconductor Modules

    Science.gov (United States)

    Elmes, John

    2015-01-01

    Silicon carbide (SiC) and other wide bandgap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and ultrahigh power density for both space and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliable high-temperature device packaging technology. This Phase II project developed an ultracompact hybrid power module packaging technology based on the use of double lead frames and direct lead frame-to-chip transient liquid phase (TLP) bonding that allows device operation up to 450 degC. The new power module will have a very small form factor with 3-5X reduction in size and weight from the prior art, and it will be capable of operating from 450 degC to -125 degC. This technology will have a profound impact on power electronics and energy conversion technologies and help to conserve energy and the environment as well as reduce the nation's dependence on fossil fuels.

  14. Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Hao, Yufeng; Wang, Lei; Liu, Yuanyue; Chen, Hua; Wang, Xiaohan; Tan, Cheng; Nie, Shu; Suk, Ji Won; Jiang, Tengfei; Liang, Tengfei; Xiao, Junfeng; Ye, Wenjing; Dean, Cory R.; Yakobson, Boris I.; McCarty, Kevin F.; Kim, Philip; Hone, James; Colombo, Luigi; Ruoff, Rodney S.

    2016-02-01

    Bernal (AB)-stacked bilayer graphene (BLG) is a semiconductor whose bandgap can be tuned by a transverse electric field, making it a unique material for a number of electronic and photonic devices. A scalable approach to synthesize high-quality BLG is therefore critical, which requires minimal crystalline defects in both graphene layers and maximal area of Bernal stacking, which is necessary for bandgap tunability. Here we demonstrate that in an oxygen-activated chemical vapour deposition (CVD) process, half-millimetre size, Bernal-stacked BLG single crystals can be synthesized on Cu. Besides the traditional 'surface-limited' growth mechanism for SLG (1st layer), we discovered new microscopic steps governing the growth of the 2nd graphene layer below the 1st layer as the diffusion of carbon atoms through the Cu bulk after complete dehydrogenation of hydrocarbon molecules on the Cu surface, which does not occur in the absence of oxygen. Moreover, we found that the efficient diffusion of the carbon atoms present at the interface between Cu and the 1st graphene layer further facilitates growth of large domains of the 2nd layer. The CVD BLG has superior electrical quality, with a device on/off ratio greater than 104, and a tunable bandgap up to -100 meV at a displacement field of 0.9 V nm-1.

  15. Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene

    Science.gov (United States)

    Hao, Yufeng; Wang, Lei; Liu, Yuanyue; Chen, Hua; Wang, Xiaohan; Tan, Cheng; Nie, Shu; Suk, Ji Won; Jiang, Tengfei; Liang, Tengfei; Xiao, Junfeng; Ye, Wenjing; Dean, Cory R.; Yakobson, Boris I.; McCarty, Kevin F.; Kim, Philip; Hone, James; Colombo, Luigi; Ruoff, Rodney S.

    2016-05-01

    Bernal (AB)-stacked bilayer graphene (BLG) is a semiconductor whose bandgap can be tuned by a transverse electric field, making it a unique material for a number of electronic and photonic devices. A scalable approach to synthesize high-quality BLG is therefore critical, which requires minimal crystalline defects in both graphene layers and maximal area of Bernal stacking, which is necessary for bandgap tunability. Here we demonstrate that in an oxygen-activated chemical vapour deposition (CVD) process, half-millimetre size, Bernal-stacked BLG single crystals can be synthesized on Cu. Besides the traditional ‘surface-limited’ growth mechanism for SLG (1st layer), we discovered new microscopic steps governing the growth of the 2nd graphene layer below the 1st layer as the diffusion of carbon atoms through the Cu bulk after complete dehydrogenation of hydrocarbon molecules on the Cu surface, which does not occur in the absence of oxygen. Moreover, we found that the efficient diffusion of the carbon atoms present at the interface between Cu and the 1st graphene layer further facilitates growth of large domains of the 2nd layer. The CVD BLG has superior electrical quality, with a device on/off ratio greater than 104, and a tunable bandgap up to ∼100 meV at a displacement field of 0.9 V nm‑1.

  16. Hybrid photonic-bandgap accelerating cavities

    Science.gov (United States)

    Di Gennaro, E.; Zannini, C.; Savo, S.; Andreone, A.; Masullo, M. R.; Castaldi, G.; Gallina, I.; Galdi, V.

    2009-11-01

    In a recent investigation, we studied two-dimensional (2D) point-defected photonic bandgap cavities composed of dielectric rods arranged according to various representative periodic and aperiodic lattices, with special emphasis on possible applications to particle acceleration (along the longitudinal axis). In this paper, we present a new study aimed at highlighting the possible advantages of using hybrid structures based on the above dielectric configurations, but featuring metallic rods in the outermost regions, for the design of extremely high quality factor, bandgap-based, accelerating resonators. In this framework, we consider diverse configurations, with different (periodic and aperiodic) lattice geometries, sizes and dielectric/metal fractions. Moreover, we also explore possible improvements attainable via the use of superconducting plates to confine the electromagnetic field in the longitudinal direction. Results from our comparative studies, based on numerical full-wave simulations backed by experimental validations (at room and cryogenic temperatures) in the microwave region, identify the candidate parametric configurations capable of yielding the highest quality factor.

  17. Hybrid photonic-bandgap accelerating cavities

    Energy Technology Data Exchange (ETDEWEB)

    Di Gennaro, E [CNISM and Department of Physics, University of Naples ' Federico II' , Naples (Italy); Zannini, C; Savo, S; Andreone, A [CNR-INFM ' Coherentia' and Department of Physics, University of Naples ' Federico II' , Naples (Italy); Masullo, M R [INFN-Naples Unit, Naples (Italy); Castaldi, G; Gallina, I; Galdi, V [Waves Group, Department of Engineering, University of Sannio, Benevento (Italy)], E-mail: masullo@na.infn.it

    2009-11-15

    In a recent investigation, we studied two-dimensional (2D) point-defected photonic bandgap cavities composed of dielectric rods arranged according to various representative periodic and aperiodic lattices, with special emphasis on possible applications to particle acceleration (along the longitudinal axis). In this paper, we present a new study aimed at highlighting the possible advantages of using hybrid structures based on the above dielectric configurations, but featuring metallic rods in the outermost regions, for the design of extremely high quality factor, bandgap-based, accelerating resonators. In this framework, we consider diverse configurations, with different (periodic and aperiodic) lattice geometries, sizes and dielectric/metal fractions. Moreover, we also explore possible improvements attainable via the use of superconducting plates to confine the electromagnetic field in the longitudinal direction. Results from our comparative studies, based on numerical full-wave simulations backed by experimental validations (at room and cryogenic temperatures) in the microwave region, identify the candidate parametric configurations capable of yielding the highest quality factor.

  18. Fiber Singular Optics

    OpenAIRE

    A. V. Volyar

    2002-01-01

    The present review is devoted to the optical vortex behavior both in free space and optical fibers. The processes of the vortex transformations in perturbed optical fibers are analyzed on the base of the operator of the spin – orbit interaction in order to forecast the possible ways of manufacturing the vortex preserving fibers and their applications in supersensitive optical devices.

  19. Comparison of retinal nerve fiber layer and macular thickness measurements with Stratus OCT and OPKO/OTI OCT devices in healthy subjects

    Institute of Scientific and Technical Information of China (English)

    Ahmet; Ozkok; Julide; Canan; Umurhan; Akkan; Nevbahar; Tamcelik; Mehmet; Erdogan; Didar; Ucar; Comlekoglu; Rengin; Yildirim

    2015-01-01

    AIM: To compare retinal nerve fiber layer(RNFL) and macular thickness measurements obtained with the Stratus optical coherence tomography(OCT) and OPKO/OTI OCT devices.METHODS: Included in the study were 59 eyes of 30 participants. All measurements for each eye were done on the same day with both devices. Student’s paired t-tests were used to compare the central macular thickness and RNFL measurements of the Stratus OCT and OPKO/OTI OCT. Pearson correlation was used to assess the relationship between the devices. Coefficient of variation(COV) was calculated to assess intersession repeatability.RESULTS: Using both the Stratus OCT and OPKO/OTI OCT, respectively, the measured mean average RNFL thicknesses were 98.9±11.1 μm and 115.1±9.6 μm(P =0.001),and the measured mean central retinal thicknesses(CRT)were 196.2 ±18.8 μm and 204.5 ±21.1 μm(P <0.001).Measured by the two devices, the RNFL thickness values were correlated in all quadrants, as were the retinal thickness values except the inferior outer sector. COV for average RNFL and CRT thickness were 2.9% and 4.6%for Stratus OCT, and 2.1% and 4.2% for OPKO/OTI OCT,respectively.CONCLUSION: We found good reproducibility of RNFL and retina thickness measurements for both Stratus OCT and OPKO/OTI OCT devices. However, even though the two OCT systems provided statistically correlated results,the values for both RNFL and macular thickness were statistically different. RNFL and macular thickness measurements with the OPKO/OTI OCT were higher than that of the Stratus OCT; therefore, the two OCT systems cannot be used interchangeably for the measurements of RNFL and macular thickness.

  20. Applications of monolithic fiber interferometers and actively controlled fibers

    OpenAIRE

    Rugeland, Patrik

    2013-01-01

    The objective of this thesis was to develop applications of monolithic fiber devices and actively controlled fibers. A special twin-core fiber known as a ‘Gemini’ fiber was used to construct equal arm-length fiber interferometers, impervious to temperature and mechanical perturbations. A broadband add/drop multiplexer was constructed by inscribing fiber Bragg gratings in the arms of a Gemini Mach-Zehnder interferometer. A broadband interferometric nanosecond switch was constructed from a micr...

  1. Sub-300 femtosecond soliton tunable fiber laser with all-anomalous dispersion passively mode locked by black phosphorus.

    Science.gov (United States)

    Chen, Yu; Chen, Shuqing; Liu, Jun; Gao, Yanxia; Zhang, Wenjing

    2016-06-13

    By using evanescent field optical deposition method, we had successfully fabricated an effective optoelectronic device based on multi-layer black phosphorus (BP), which is been heavily investigating 2 dimensional (2D) semiconducting material with similar structure as graphene and thickness dependent direct band-gap. By placing this BP-based optoelectronic device inside a highly compact all-anomalous dispersion fiber laser cavity, stable passive mode-locking operation could be ensured and eventually a record 280 fs transmission limited soliton pulse with tunable central wavelength had been obtained through finely tailoring the cavity length. Other operation states, like bound soliton and noise-like state, had also been observed as well. This work demonstrates the enormous potential of BP for ultra-short pulse generation as an effective optoelectronic device. PMID:27410348

  2. Two-dimensional complex source point solutions: application to propagationally invariant beams, optical fiber modes, planar waveguides, and plasmonic devices.

    Science.gov (United States)

    Sheppard, Colin J R; Kou, Shan S; Lin, Jiao

    2014-12-01

    Highly convergent beam modes in two dimensions are considered based on rigorous solutions of the scalar wave (Helmholtz) equation, using the complex source point formalism. The modes are applicable to planar waveguide or surface plasmonic structures and nearly concentric microcavity resonator modes in two dimensions. A novel solution is that of a vortex beam, where the direction of propagation is in the plane of the vortex. The modes also can be used as a basis for the cross section of propagationally invariant beams in three dimensions and bow-tie-shaped optical fiber modes. PMID:25606756

  3. Novel 1-D Sandwich Photonic Bandgap Structure

    Institute of Scientific and Technical Information of China (English)

    庞云波; 高葆新

    2004-01-01

    A sandwich photonic bandgap (PBG) structure is a novel PBG structure whose periodic lattice is buried in the middle of a substrate. Neither drilling nor suspending the substrate is required, and the integrity of the ground plane is maintained. This paper presents several modification techniques for sandwich PBG structure fabrication. The forbidden gap can be improved by adopting the chirping technique, applying the tapering technique, enlarging the periodic elements, adjusting the location of the periodic lattice in the substrate, and using different dielectric media H-shape elements. A finite difference time domain method is applied to analyze the structures. Deep and wide stopbands can be obtained using the modified sandwich structures. Experimental measurement results agree well with the theoretical analysis.

  4. Single-photon propagation through dielectric bandgaps.

    Science.gov (United States)

    Borjemscaia, Natalia; Polyakov, Sergey V; Lett, Paul D; Migdall, Alan

    2010-02-01

    Theoretical models of photon traversal through quarter-wave dielectric stack barriers that arise due to Bragg reflection predict the saturation of the propagation time with the barrier length, known as the Hartman effect. This saturation is sensitive to the addition of single dielectric layers, varying significantly from sub-luminal to apparently super-luminal and vice versa. Our research tests the suitability of photonic bandgaps as an optical model for the tunneling process. Of particular importance is our observation of subtle structural changes in dielectric stacks drastically affecting photon traversal times, allowing for apparent sub- and super-luminal effects. We also introduce a simple model to link HOM visibility to wavepacket distortion that allows us to exclude this as a possible cause of the loss of contrast in the barrier penetration process. PMID:20174056

  5. Review of long period fiber gratings written by CO2 laser

    OpenAIRE

    Wang, Yiping

    2010-01-01

    This paper presents a systematic review of long period fiber gratings (LPFGs) written by the CO2 laser irradiation technique. First, various fabrication techniques based on CO2 laser irradiations are demonstrated to write LPFGs in different types of optical fibers such as conventional glass fibers, solid-core photonic crystal fibers, and air-core photonic bandgap fibers. Second, possible mechanisms, e.g., residual stress relaxation, glass structure changes, and physical deformation, of refrac...

  6. Microstructured optical fibers - Fundamentals and applications

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper; Bjarklev, Anders Overgaard

    2006-01-01

    In recent years optical fibers having a complex microstructure in the transverse plane have attracted much attention from both researchers and industry. Such fibers can either guide light through total internal reflection or the photonic bandgap effect. Among the many unique applications offered by...... these fibers are mode guidance in air, highly flexible dispersion engineering, and the use of very heterogeneous material combinations. In this paper, we review the different types and applications of microstructured optical fibers, with particular emphasis on recent advances in the field....

  7. On the mechanism of bandgap formation in locally resonant finite elastic metamaterials

    Science.gov (United States)

    Sugino, Christopher; Leadenham, Stephen; Ruzzene, Massimo; Erturk, Alper

    2016-10-01

    Elastic/acoustic metamaterials made from locally resonant arrays can exhibit bandgaps at wavelengths much longer than the lattice size for various applications spanning from low-frequency vibration/sound attenuation to wave guiding and filtering in mechanical and electromechanical devices. For an effective use of such locally resonant metamaterial concepts in finite structures, it is required to bridge the gap between the lattice dispersion characteristics and modal behavior of the host structure with its resonators. To this end, we develop a novel argument for bandgap formation in finite-length elastic metamaterial beams, relying on the modal analysis and the assumption of infinitely many resonators. We show that the dual problem to wave propagation through an infinite periodic beam is the modal analysis of a finite beam with an infinite number of resonators. A simple formula that depends only on the resonator natural frequency and total mass ratio is derived for placing the bandgap in a desired frequency range, yielding an analytical insight and a rule of thumb for design purposes. A method for understanding the importance of a resonator location and mass is discussed in the context of a Riemann sum approximation of an integral, and a method for determining the optimal number of resonators for a given set of boundary conditions and target frequency is introduced. The simulations of the theoretical framework are validated by experiments for bending vibrations of a locally resonant cantilever beam.

  8. Compound semiconductor alloys: From atomic-scale structure to bandgap bowing

    Energy Technology Data Exchange (ETDEWEB)

    Schnohr, C. S., E-mail: c.schnohr@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany)

    2015-09-15

    Compound semiconductor alloys such as In{sub x}Ga{sub 1−x}As, GaAs{sub x}P{sub 1−x}, or CuIn{sub x}Ga{sub 1−x}Se{sub 2} are increasingly employed in numerous electronic, optoelectronic, and photonic devices due to the possibility of tuning their properties over a wide parameter range simply by adjusting the alloy composition. Interestingly, the material properties are also determined by the atomic-scale structure of the alloys on the subnanometer scale. These local atomic arrangements exhibit a striking deviation from the average crystallographic structure featuring different element-specific bond lengths, pronounced bond angle relaxation and severe atomic displacements. The latter, in particular, have a strong influence on the bandgap energy and give rise to a significant contribution to the experimentally observed bandgap bowing. This article therefore reviews experimental and theoretical studies of the atomic-scale structure of III-V and II-VI zincblende alloys and I-III-VI{sub 2} chalcopyrite alloys and explains the characteristic findings in terms of bond length and bond angle relaxation. Different approaches to describe and predict the bandgap bowing are presented and the correlation with local structural parameters is discussed in detail. The article further highlights both similarities and differences between the cubic zincblende alloys and the more complex chalcopyrite alloys and demonstrates that similar effects can also be expected for other tetrahedrally coordinated semiconductors of the adamantine structural family.

  9. The Tunable Bandgap of AB-Stacked Bilayer Graphene on SiO2 with H2O Molecule Adsorption

    Institute of Scientific and Technical Information of China (English)

    WANG Tao; GUO Qing; AO Zhi-Min; LIU Yan; WANG Wen-Bo; SHENG Kuang; YU Bin

    2011-01-01

    The atomic and electronic structures of AB-stacking bilayer graphene (BLG) in the presence of H2O molecules are investigated by density functional theory calculations.For free-standing BLG,the bandgap is opened to 0.101 eV with a single H2O molecule adsorbed on its surface.The perfectly suspended BLG is sensitive to H2O adsorbates,which break the BLG lattice symmetry and open an energy gap.While a single H2O molecule is adsorbed on the BLG surface with a SiO2 substrate,the bandgap widens to 0.363eV.Both the H2O molecule adsorption and the oxide substrate contribute to the BLG bandgap opening.The phenomenon is interpreted with the charge transfer process in 2D carbon nanostructures.With its demonstrated unique electron transport properties,graphene has becomes one of the research hot spots with great potential in replacing silicon for future-generation nanoscale electronic devices.[1-3]Among graphene derivatives,AB-stacking bilayer graphene (BLG) exhibits fantastic properties.For example,the IBM research group successfully demonstrated a BLG-based transistor with a working frequency from 24.7 to 100GHz and highlighted suppressed electronic noise in devices.[4-6] With one additional layer added on single-layer graphene,BLG has a completely different band structure.However,pristine BLG still suffers from the same zero-bandgap (Eg) issue as single-layer graphene,hampering the implementation of logic switch devices with sufficient onto-off current ratios.%The atomic and electronic structures of AB-stacking bilayer graphene (BLG) in the presence of H2O molecules are investigated by density functional theory calculations. For free-standing BLG, the bandgap is opened to 0.101 eV with a single H2O molecule adsorbed on its surface. The perfectly suspended BLG is sensitive to H2O adsorbates, which break the BLG lattice symmetry and open an energy gap. While a single H2O molecule is adsorbed on the BLG surface with a S1O2 substrate, the bandgap widens to 0.363eV. Both the H2O

  10. Fiber-optic Fourier transform infrared (FO-FTIR) spectroscopy for detecting endotoxin contamination in ophthalmic viscosurgical devices (OVDS) (Conference Presentation)

    Science.gov (United States)

    Hassan, Moinuddin; Ilev, Ilko

    2016-03-01

    Ophthalmic Viscosurgical Devices (OVDs) in clinical setting are a major health risk factor for potential endotoxin contamination in the eye, due to their extensive applications in cataract surgery for space creation, stabilization and protection of intraocular tissue and intraocular lens (IOL) during implantation. Endotoxin contamination of OVDs is implicated in toxic anterior syndrome (TASS), a severe complication of cataract surgery that leads to intraocular damage and even blindness. Current standard methods for endotoxin contamination detection utilize rabbit assay or Limulus amoebocyte lysate (LAL) assays. These endotoxin detection strategies are extremely difficult for gel-like type devices such as OVDs. To overcome the endotoxin detection limitations in OVDs, we have developed an alternative optical detection methodology for label-free and real-time sensing of bacterial endotoxin in OVDs, based on fiber-optic Fourier transform infrared (FO-FTIR) transmission spectrometry in the mid-IR spectral range from 2.5 micron to 12 micron. Endotoxin contaminated OVD test samples were prepared by serial dilutions of endotoxins on OVDs. The major results of this study revealed two salient spectral peak shifts (in the regions 2925 to 2890 cm^-1 and 1125 to 1100 cm^-1), which are associated with endotoxin in OVDs. In addition, FO-FTIR experimental results processed using a multivariate analysis confirmed the observed specific peak shifts associated with endotoxin contamination in OVDs. Thus, employing the FO-FTIR sensing methodology integrated with a multivariate analysis could potentially be used as an alternative endotoxin detection technique in OVD.

  11. Photonic crystal fibers: fundamentals to emerging applications

    DEFF Research Database (Denmark)

    Bjarklev, Anders Overgaard

    2005-01-01

    A review of the fundamental properties of photonic crystal fibers is presented. Special focus is held on the emerging fields of application within areas such as actively controlled fiber devices and high-power fiber lasers.......A review of the fundamental properties of photonic crystal fibers is presented. Special focus is held on the emerging fields of application within areas such as actively controlled fiber devices and high-power fiber lasers....

  12. Fused-Polished Fiber Couplers

    Institute of Scientific and Technical Information of China (English)

    Sien; Chi; Shiao-Min; Tseng

    2003-01-01

    We report on fused-polished fiber couplers with a new fabrication method. This structure so fabricated is promising while achieving high-performance all-fiber WDM devices. Potential advantages and prospects of our works are presented.

  13. Semiconductor nanostructures for optoelectronic devices processing, characterization and applications

    CERN Document Server

    Yi, Gyu-Chul

    2012-01-01

    This book summarizes the current state of semiconductor nanodevice development, examining nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene and describing their device applications.

  14. Photo-induced changes in a hybrid amorphous chalcogenide/silica photonic crystal fiber

    DEFF Research Database (Denmark)

    Markos, Christos

    2014-01-01

    Photostructural changes in a hybrid photonic crystal fiber with chalcogenide nanofilms inside the inner surface of the cladding holes are experimentally demonstrated. The deposition of the amorphous chalcogenide glass films inside the silica capillaries of the fiber was made by infiltrating...... the nanocolloidal solution-based As25S75, while the photoinduced changes were performed by side illuminating the fiber near the bandgap edge of the formed glass nanofilms. The photoinduced effect of the chalcogenide glass directly red-shifts the transmission bandgap position of the fiber as high as similar to 20...

  15. Pd-catalysed direct arylation polymerisation for synthesis of low-bandgap conjugated polymers and photovoltaic performance.

    Science.gov (United States)

    Chang, Shu-Wei; Waters, Huw; Kettle, Jeff; Kuo, Zi-Rui; Li, Chun-Han; Yu, Chin-Yang; Horie, Masaki

    2012-11-23

    Low-bandgap conjugated copolymers based on a donor-acceptor structure have been synthesised via palladium-complex catalysed direct arylation polymerisation. Initially, we report the optimisation of the synthesis of poly(cyclopentadithiophene-alt-benzothiadiazole) (PCPDTBT) formed between cyclopentadithiophene and dibromobenzothiadiazole units. The polymerisation condition has been optimised, which affords high-molecular-weight polymers of up to M(n) = 70 k using N-methylpyrrolidone as a solvent. The polymers are used to fabricate organic photovoltaic devices and the best performing PCPDTBT device exhibits a moderate improvement over devices fabricated using the related polymer via Suzuki coupling. Similar polymerisation conditions have also been applied for other monomer units.

  16. Degradation of wide band-gap electrolumienscent materials by exciton-polaron interactions (Presentation Recording)

    Science.gov (United States)

    Aziz, Hany; Wang, Qi

    2015-10-01

    The limited performance stability and gradual loss in the electroluminescence efficiency of OLEDs utilizing wide band-gap materials, such as blue-emitting phosphorescent and fluorescent devices, continues to be a challenge for wider technology adoption. We recently found that interactions between excitons and polarons play an important role in the aging behavior of electroluminescent materials, and that a correlation exists between the susceptibility of these materials to this aging mode and their band-gap. This degradation mode is also found to be often associated with the emergence of new bands - at longer wavelength - in the electroluminescence spectra of the materials, that can often be detected after prolonged electrical driving. Such bands contribute to the increased spectral broadening and color purity loss often observed in these devices over time. Exciton-polaron interactions, and the associated degradation, are also found to occur most significantly in the vicinity of device inter-layer interfaces such as at the interface between the emitter layer and the electron or hole transport layers. New results obtained from investigations of these phenomena in a wide range of commonly used host and guest OLED materials will be presented.

  17. Design of Bandgap Reference in Switching Power Supply

    Institute of Scientific and Technical Information of China (English)

    XU Li; NIU Ping-juan; FU Xian-song; DING Ke; PENG Xiao-lei

    2009-01-01

    A bandgap voltage reference is designed to meet the requirements of low power loss,low temperature coefficient and high power source rejection ratio(PSRR) in the intergrated circuit.Based on the analysis of conventional bandgap reference circuit,and combined with the integral performance of IC,the specific design index of the bandgap reference is put forward.In the meantime,the circuit and the layout are designed with Chartered 0.35 μm dual gate CMOS process.The simulation result shows that the coefficient is less than 30ppm/℃ with the temperature from -50℃ to 150℃. The bandgap reference has the characteristics of low power and high PSRR.

  18. High Power Wide Bandgap Engineered MMW MMIC Transceiver Project

    Data.gov (United States)

    National Aeronautics and Space Administration — During this phase I SBIR effort unique proven lattice and bandgap engineering techniques will be utilized to epitaxially grow InAlAs / InGaAs on GaN substrate for...

  19. A bandgap phenomenon in non-periodic plasmonic waveguides

    CERN Document Server

    Shaidiuk, Viacheslav; Park, Namkyoo

    2015-01-01

    The phenomenon of a dispersion bandgap opening between low-loss spectral windows of odd and even plasmonic modes in a layered insulator-metal-insulator plasmonic waveguide is introduced. Beginning with a three layer plasmonic dispersion relation, we explain and numerically confirm the existence of the plasmonic bandgap, and investigate its properties at a very broad spectrum range from ultraviolet to far infrared. The nature of the observed bandgap opening is explained in terms of the near-zero value of an effective permittivity for plasmonic modes in the waveguide. The adjustment of the plasmonic bandgap spectrum is demonstrated with the structural modification of the plasmonic waveguide. As an application example, we illustrate a new concept of coupling control between surface plasmons and free-space excitation waves, by employing a tapered non-adiabatic insulator-metal-insulator waveguide.

  20. Bandgap tuning in armchair MoS2 nanoribbon

    Science.gov (United States)

    Yue, Qu; Chang, Shengli; Kang, Jun; Zhang, Xueao; Shao, Zhengzheng; Qin, Shiqiao; Li, Jingbo

    2012-08-01

    We report on the first-principles calculations of bandgap modulation in armchair MoS2 nanoribbon (AMoS2NR) by transverse and perpendicular electric fields respectively. In the monolayer AMoS2NR case, it is shown that the bandgap can be significantly reduced and be closed by transverse field, whereas the bandgap modulation is absent under perpendicular field. The critical strength of transverse field for gap closure decreases as ribbon width increases. In the multilayer AMoS2NR case, in contrast, it is shown that the bandgap can be effectively reduced by both transverse and perpendicular fields. Nevertheless, it seems that the two fields exhibit different modulation effects on the gap. The critical strength of perpendicular field for gap closure decreases with increasing number of layers, while the critical strength of transverse field is almost independent of it.

  1. Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air.

    Science.gov (United States)

    Fonseca, Jose J; Tongay, Sefaattin; Topsakal, Mehmet; Chew, Annabel R; Lin, Alan J; Ko, Changhyun; Luce, Alexander V; Salleo, Alberto; Wu, Junqiao; Dubon, Oscar D

    2016-08-01

    A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te-terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is achieved by thermal annealing, demonstrating that reversible band engineering in layered semiconductors is accessible through their surfaces.

  2. Specialty optical fibers: revisited

    Science.gov (United States)

    Romaniuk, Ryszard S.

    2011-10-01

    The paper contains description of chosen aspects of analysis and design of tailored optical fibers. By specialty optical fibers we understand here the fibers which have complex construction and which serve for the functional processing of optical signal rather than long distance transmission. Thus, they are called also instrumentation optical fibers. The following issues are considered: transmission properties, transformation of optical signal, fiber characteristics, fiber susceptibility to external reactions. The technology of tailored optical fibers offers a wider choice of the design tools for the fiber itself, and then various devices made from these fiber, than classical technology of communication optical fibers. The consequence is different fiber properties, nonstandard dimensions and different metrological problems. The price to be paid for wider design possibilities are bigger optical losses of these fibers and weaker mechanical properties, and worse chemical stability. These fibers find their applications outside the field of telecommunications. The applications of instrumentation optical fibers combine other techniques apart from the photonics ones like: electronic, chemical and mechatronic.

  3. Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions

    KAUST Repository

    Awan, Saif Ullah

    2014-08-28

    Microstructural and optical properties of Zn1-yLiyO (0.00 ≤y ≤0.10) nanoparticles are investigated. Li incorporation leads to substantial changes in the structural characterization. From micro-structural analysis, no secondary phases or clustering of Li was detected. Elemental maps confirmed homogeneous distribution of Li in ZnO. Sharp UV peak due to the recombination of free exciton and defects based luminescence broad visible band was observed. The transition from the conduction band to Zinc vacancy defect level in photoluminescence spectra is found at 518±2.5nm. The yellow luminescence was observed and attributed to Li related defects in doped samples. With increasing Li doping, a decrease in energy bandgap was observed in the range 3.26±0.014 to 3.17±0.018eV. The bandgap narrowing behavior is explained in terms of the band tailing effect due to structural disorder, carrier-impurities, carrier-carrier, and carrier-phonon interactions. Tuning of the bandgap energy in this class of wide bandgap semiconductor is very important for room temperature spintronics applications and optical devices. © 2014 AIP Publishing LLC.

  4. Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications

    KAUST Repository

    Amin, B.

    2011-01-19

    A theoretical study of Al1−xGaxN, based on the full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap,optical properties, and nonlinear behavior of the compound with the change in the Ga concentration. It is found that the bandgap decreases with the increase in Ga. A maximum value of 5.50 eV is determined for the bandgap of pure AlN, which reaches a minimum value of 3.0 eV when Al is completely replaced by Ga. The static index of refraction and dielectric constant decreases with the increase in the bandgap of the material, assigning a high index of refraction to pure GaN when compared to pure AlN. The refractive index drops below 1 for higher energy photons, larger than 14 eV. The group velocity of these photons is larger than the vacuum velocity of light. This astonishing result shows that at higher energies the optical properties of the material shifts from linear to nonlinear. Furthermore, frequency dependent reflectivity and absorption coefficients show that peak values of the absorption coefficient and reflectivity shift toward lower energy in the ultraviolet (UV) spectrum with the increase in Ga concentration. This comprehensive theoretical study of the optoelectronic properties predicts that the material can be effectively used in the optical devices working in the visible and UV spectrum.

  5. Paper-based energy-storage devices comprising carbon fiber-reinforced polypyrrole-cladophora nanocellulose composite electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Razaq, Aamir; Sjoedin, Martin; Stroemme, Maria; Mihranyan, Albert [Nanotechnology and Functional Materials, Department of Engineering Sciences, Uppsala (Sweden); Department of Chemistry, Angstroem Laboratory, Uppsala (Sweden); Nyholm, Leif [Department of Chemistry, Angstroem Laboratory, Uppsala (Sweden)

    2012-04-15

    Composites of polypyrrole (PPy) and Cladophora nanocellulose, reinforced with 8 {mu}m-thick chopped carbon filaments, can be used as electrode materials to obtain paper-based energy-storage devices with unprecedented performance at high charge and discharge rates. Charge capacities of more than 200 C g{sup -1} (PPy) are obtained for paper-based electrodes at potential scan rates as high as 500 mV s{sup -1}, whereas cell capacitances of {proportional_to}60-70 F g{sup -1} (PPy) are reached for symmetric supercapacitor cells with capacitances up to 3.0 F (i.e.,0.48 F cm{sup -2}) when charged to 0.6 V using current densities as high as 31 A g{sup -1} based on the PPy weight (i.e., 99 mA cm{sup -2}). Energy and power densities of 1.75 Wh kg{sup -1} and 2.7 kW kg{sup -1}, respectively, are obtained when normalized with respect to twice the PPy weight of the smaller electrode. No loss in cell capacitance is seen during charging/discharging at 7.7 A g{sup -1} (PPy) over 1500 cycles. It is proposed that the nonelectroactive carbon filaments decrease the contact resistances and the resistance of the reduced PPy composite. The present straightforward approach represents significant progress in the development of low-cost and environmentally friendly paper-based energy-storage devices for high-power applications. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. On the Suppression Band and Bandgap of Planar Electromagnetic Bandgap Structures

    Directory of Open Access Journals (Sweden)

    Baharak Mohajer-Iravani

    2014-01-01

    Full Text Available Electromagnetic bandgap structures are considered a viable solution for the problem of switching noise in printed circuit boards and packages. Less attention, however, has been given to whether or not the introduction of EBGs affects the EMI potential of the circuit to couple unwanted energy to neighboring layers or interconnects. In this paper, we show that the bandgap of EBG structures, as generated using the Brillouin diagram, does not necessarily correspond to the suppression bandwidth typically generated using S-parameters. We show that the reactive near fields radiating from openings within the EBG layers can be substantial and are present in the entire frequency band including propagating and nonpropagating mode regions. These fields decay fast with distance; however, they can couple significant energy to adjacent layers and to signal lines. The findings are validated using full-wave three-dimensional numerical simulation. Based on this work, design guidelines for EBG structures can be drawn to insure not only suppression of switching noise but also minimization of EMI and insuring signal integrity.

  7. Low bandgap semiconducting polymers for polymeric photovoltaics.

    Science.gov (United States)

    Liu, Chang; Wang, Kai; Gong, Xiong; Heeger, Alan J

    2016-08-22

    In order to develop high performance polymer solar cells (PSCs), full exploitation of the sun-irradiation from ultraviolet (UV) to near infrared (NIR) is one of the key factors to ensure high photocurrents and thus high efficiency. In this review, five of the effective design rules for approaching LBG semiconducting polymers with high molar absorptivity, suitable energy levels, high charge carrier mobility and high solubility in organic solvents are overviewed. These design stratagems include fused heterocycles for facilitating π-electron flowing along the polymer backbone, groups/atoms bridging adjacent rings for maintaining a high planarity, introduction of electron-withdrawing units for lowering the bandgap (Eg), donor-acceptor (D-A) copolymerization for narrowing Eg and 2-dimensional conjugation for broadened absorption and enhanced hole mobility. It has been demonstrated that LBG semiconducting polymers based on electron-donor units combined with strong electron-withdrawing units possess excellent electronic and optic properties, emerging as excellent candidates for efficient PSCs. While for ultrasensitive photodetectors (PDs), which have intensive applications in both scientific and industrial sectors, sensing from the UV to the NIR region is of critical importance. For polymer PDs, Eg as low as 0.8 eV has been obtained through a rational design stratagem, covering a broad wavelength range from the UV to the NIR region (1450 nm). However, the response time of the polymer PDs are severely limited by the hole mobility of LBG semiconducting polymers, which is significantly lower than those of the inorganic materials. Thus, further advancing the hole mobility of LBG semiconducting polymers is of equal importance as broadening the spectral response for approaching uncooled ultrasensitive broadband polymer PDs in the future study. PMID:26548402

  8. Low bandgap semiconducting polymers for polymeric photovoltaics.

    Science.gov (United States)

    Liu, Chang; Wang, Kai; Gong, Xiong; Heeger, Alan J

    2016-08-22

    In order to develop high performance polymer solar cells (PSCs), full exploitation of the sun-irradiation from ultraviolet (UV) to near infrared (NIR) is one of the key factors to ensure high photocurrents and thus high efficiency. In this review, five of the effective design rules for approaching LBG semiconducting polymers with high molar absorptivity, suitable energy levels, high charge carrier mobility and high solubility in organic solvents are overviewed. These design stratagems include fused heterocycles for facilitating π-electron flowing along the polymer backbone, groups/atoms bridging adjacent rings for maintaining a high planarity, introduction of electron-withdrawing units for lowering the bandgap (Eg), donor-acceptor (D-A) copolymerization for narrowing Eg and 2-dimensional conjugation for broadened absorption and enhanced hole mobility. It has been demonstrated that LBG semiconducting polymers based on electron-donor units combined with strong electron-withdrawing units possess excellent electronic and optic properties, emerging as excellent candidates for efficient PSCs. While for ultrasensitive photodetectors (PDs), which have intensive applications in both scientific and industrial sectors, sensing from the UV to the NIR region is of critical importance. For polymer PDs, Eg as low as 0.8 eV has been obtained through a rational design stratagem, covering a broad wavelength range from the UV to the NIR region (1450 nm). However, the response time of the polymer PDs are severely limited by the hole mobility of LBG semiconducting polymers, which is significantly lower than those of the inorganic materials. Thus, further advancing the hole mobility of LBG semiconducting polymers is of equal importance as broadening the spectral response for approaching uncooled ultrasensitive broadband polymer PDs in the future study.

  9. Monolithic Yb-fiber femtosecond laser with intracavity all-solid PBG fiber and ex-cavity HC-PCF

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Liu, Xiaomin; Lægsgaard, Jesper

    2010-01-01

    (PM) photonic bandgap fiber (PBG) is used in the cavity of the master oscillator for dispersion compensation and stabilization of modelocking. The final compression of an chirped-pulse-amplified laser signal is performed in a hollow PM PCF, yielding final fiber-delivered pulse energy of around 7 n......We demonstrate an all-fiber femtosecond master oscillator / power amplifier operating at the central wavelength of 1033 nm, based on Yb-doped fiber as gain medium, and two different kinds of photonic crystal fibers for dispersion control and stabilization. An all-solid (AS) polarization maintaining...

  10. Wideband saturable absorption in few-layer molybdenum diselenide (MoSe2) for Q-switching Yb-, Er- and Tm-doped fiber lasers

    CERN Document Server

    Woodward, R I; Runcorn, T H; Hu, G; Torrisi, F; Kelleher, E J R; Hasan, T

    2015-01-01

    We fabricate a free-standing molybdenum diselenide (MoSe2) saturable absorber by embedding liquid-phase exfoliated few-layer MoSe2 flakes into a polymer film. The MoSe2-polymer composite is used to Q-switch fiber lasers based on ytterbium (Yb), erbium (Er) and thulium (Tm) gain fiber, producing trains of microsecond-duration pulses with kilohertz repetition rates at 1060 nm, 1566 nm and 1924 nm, respectively. Such operating wavelengths correspond to sub-bandgap saturable absorption in MoSe2, which is explained in the context of edge-states, building upon studies of other semiconducting transition metal dichalcogenide (TMD)-based saturable absorbers. Our work adds few-layer MoSe2 to the growing catalog of TMDs with remarkable optical properties, which offer new opportunities for photonic devices.

  11. High-Efficiency Solar Cells Using Photonic-Bandgap Materials

    Science.gov (United States)

    Dowling, Jonathan; Lee, Hwang

    2005-01-01

    Solar photovoltaic cells would be designed to exploit photonic-bandgap (PBG) materials to enhance their energy-conversion efficiencies, according to a proposal. Whereas the energy-conversion efficiencies of currently available solar cells are typically less than 30 percent, it has been estimated that the energy-conversion efficiencies of the proposed cells could be about 50 percent or possibly even greater. The primary source of inefficiency of a currently available solar cell is the mismatch between the narrow wavelength band associated with the semiconductor energy gap (the bandgap) and the broad wavelength band of solar radiation. This mismatch results in loss of power from both (1) long-wavelength photons, defined here as photons that do not have enough energy to excite electron-hole pairs across the bandgap, and (2) short-wavelength photons, defined here as photons that excite electron- hole pairs with energies much above the bandgap. It follows that a large increase in efficiency could be obtained if a large portion of the incident solar energy could be funneled into a narrow wavelength band corresponding to the bandgap. In the proposed approach, such funneling would be effected by use of PBG materials as intermediaries between the Sun and photovoltaic cells.

  12. Electrical and optical measurements of the bandgap energy of a light-emitting diode

    Science.gov (United States)

    Petit, Matthieu; Michez, Lisa; Raimundo, Jean-Manuel; Dumas, Philippe

    2016-03-01

    Semiconductor materials are at the core of electronics. Most electronic devices are made of semiconductors. The operation of these components is well described by quantum physics which is often a difficult concept for students to understand. One of the intrinsic parameters of semiconductors is their bandgap energy {{E}\\text{g}} . In the case of light-emitting diodes (LEDs) {{E}\\text{g}} fixes the colour of the light emitted by the diodes. In this article we propose an experiment to compare {{E}\\text{g}} of a green LED obtained by both electrical and optical measurements. The two slightly different results can be explained by the theoretical knowledge of students on solid physics and the internal structure of electronic devices.

  13. Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

    Science.gov (United States)

    Shoute, Gem; Afshar, Amir; Muneshwar, Triratna; Cadien, Kenneth; Barlage, Douglas

    2016-01-01

    Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely investigated as a result of the lack of available p-type wide-bandgap inorganic semiconductors. Here, we present a wide-bandgap metal-oxide n-type semiconductor that is able to sustain a strong p-type inversion layer using a high-dielectric-constant barrier dielectric when sourced with a heterogeneous p-type material. A demonstration of the utility of the inversion layer was also investigated and utilized as the controlling element in a unique tunnelling junction transistor. The resulting electrical performance of this prototype device exhibited among the highest reported current, power and transconductance densities. Further utilization of the p-type inversion layer is critical to unlocking the previously unexplored capability of metal-oxide thin-film transistors, such applications with next-generation display switches, sensors, radio frequency circuits and power converters. PMID:26842997

  14. STM/STS Study of Surface Modification Effect on Bandgap Structure of Ti2C with -OH, -F, and -H

    Science.gov (United States)

    Jung, Seong Jun; Lai, Shen; Jeong, Taehwan; Lee, Sungjoo; Song, Young Jae

    In this presentation, we present Scanning Tunneling Microscopy (STM) and Spectroscopy (STS) study of bandgap structures of surface-modified Ti2C with -OH, -F, and -O in atomic scale. Since the discovery of new two dimensional (2D) materials like graphene, various 2D materials including transition metal dichalcogenide (TMD) have been intensively investigated. There are, however, still scientific issues to apply them to the device fabrications for controlling the appropriate bandgap structure with high field effect mobility. Recently another 2D materials of transition metal carbide (TMC), Ti2CTx with modifiable surface group Tx(-OH, -F, and -O) was suggested. [S. Lai et. al, Nanoscale (2015), DOI: 10.1039/C5NR06513E]. This 2D material shows that the mobility at room temperature is less sensitive to the measured transport bandgap, which can imply that Ti2CTx can be a strong candidate of 2D TMC for application to the future electronic devices. Surface modification on the electronic structure of Ti2C by -OH, -F, and -O is, therefore, investigated by STM and STS in atomic scale. More scientific results will be further discussed in the presentation. This research was supported by Basic Science Research Program through the National Research Foundation of Korea funded by the Korean government (Grant Numbers: 2015R1A1A1A05027585, 2011­0030046, IBS- R011­D1, 2014M3C1A3053024 and 2015M3A7B4050455).

  15. Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

    Science.gov (United States)

    Shoute, Gem; Afshar, Amir; Muneshwar, Triratna; Cadien, Kenneth; Barlage, Douglas

    2016-02-01

    Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely investigated as a result of the lack of available p-type wide-bandgap inorganic semiconductors. Here, we present a wide-bandgap metal-oxide n-type semiconductor that is able to sustain a strong p-type inversion layer using a high-dielectric-constant barrier dielectric when sourced with a heterogeneous p-type material. A demonstration of the utility of the inversion layer was also investigated and utilized as the controlling element in a unique tunnelling junction transistor. The resulting electrical performance of this prototype device exhibited among the highest reported current, power and transconductance densities. Further utilization of the p-type inversion layer is critical to unlocking the previously unexplored capability of metal-oxide thin-film transistors, such applications with next-generation display switches, sensors, radio frequency circuits and power converters.

  16. Advanced Materials for High Temperature, High Performance, Wide Bandgap Power Modules

    Science.gov (United States)

    O'Neal, Chad B.; McGee, Brad; McPherson, Brice; Stabach, Jennifer; Lollar, Richard; Liederbach, Ross; Passmore, Brandon

    2016-01-01

    Advanced packaging materials must be utilized to take full advantage of the benefits of the superior electrical and thermal properties of wide bandgap power devices in the development of next generation power electronics systems. In this manuscript, the use of advanced materials for key packaging processes and components in multi-chip power modules will be discussed. For example, to date, there has been significant development in silver sintering paste as a high temperature die attach material replacement for conventional solder-based attach due to the improved thermal and mechanical characteristics as well as lower processing temperatures. In order to evaluate the bond quality and performance of this material, shear strength, thermal characteristics, and void quality for a number of silver sintering paste materials were analyzed as a die attach alternative to solder. In addition, as high voltage wide bandgap devices shift from engineering samples to commercial components, passivation materials become key in preventing premature breakdown in power modules. High temperature, high dielectric strength potting materials were investigated to be used to encapsulate and passivate components internal to a power module. The breakdown voltage up to 30 kV and corresponding leakage current for these materials as a function of temperature is also presented. Lastly, high temperature plastic housing materials are important for not only discrete devices but also for power modules. As the operational temperature of the device and/or ambient temperature increases, the mechanical strength and dielectric properties are dramatically reduced. Therefore, the electrical characteristics such as breakdown voltage and leakage current as a function of temperature for housing materials are presented.

  17. Hierarchically Structured Electrospun Fibers

    Directory of Open Access Journals (Sweden)

    Nicole E. Zander

    2013-01-01

    Full Text Available Traditional electrospun nanofibers have a myriad of applications ranging from scaffolds for tissue engineering to components of biosensors and energy harvesting devices. The generally smooth one-dimensional structure of the fibers has stood as a limitation to several interesting novel applications. Control of fiber diameter, porosity and collector geometry will be briefly discussed, as will more traditional methods for controlling fiber morphology and fiber mat architecture. The remainder of the review will focus on new techniques to prepare hierarchically structured fibers. Fibers with hierarchical primary structures—including helical, buckled, and beads-on-a-string fibers, as well as fibers with secondary structures, such as nanopores, nanopillars, nanorods, and internally structured fibers and their applications—will be discussed. These new materials with helical/buckled morphology are expected to possess unique optical and mechanical properties with possible applications for negative refractive index materials, highly stretchable/high-tensile-strength materials, and components in microelectromechanical devices. Core-shell type fibers enable a much wider variety of materials to be electrospun and are expected to be widely applied in the sensing, drug delivery/controlled release fields, and in the encapsulation of live cells for biological applications. Materials with a hierarchical secondary structure are expected to provide new superhydrophobic and self-cleaning materials.

  18. Investigation of the guided-mode characteristics of hollow-core photonic band-gap fibre with interstitial holes

    Institute of Scientific and Technical Information of China (English)

    Yuan Jin-Hui; Yu Chong-Xiu; Sang Xin-Zhu; Zhang Jin-Long; Zhou Gui-Yao; Li Shu-Guang; Hou Lan-Tian

    2011-01-01

    This paper investigates the guided-mode characteristics of hollow-core photonic band-gap fibre (HC-PBGF) with interstitial holes fabricated by an improved twice stack-and-draw technique at visible wavelengths. Based on the simulation model with interstitial holes, the influence of glass interstitial apexes on photonic band-gaps is discussed.The existing forms of guided-mode in part band gaps are shown by using the full-vector plane-wave method. In the experiment, the observed transmission spectrum corresponds to the part band gaps obtained by simulation. The fundamental and second-order guided-modes with mixture of yellow and green light are observed through choosing appropriate fibre length and adjusting coupling device. The loss mechanism of guided-modes in HC-PBGF is also discussed.

  19. Bandgap calculations and trends of organometal halide perovskites

    DEFF Research Database (Denmark)

    Castelli, Ivano Eligio; García Lastra, Juan Maria; Thygesen, Kristian Sommer;

    2014-01-01

    Energy production from the Sun requires a stable efficient light absorber. Promising candidates in this respect are organometal perovskites (ABX3), which have been intensely investigated during the last years. Here, we have performed electronic structure calculations of 240 perovskites composed...... of Cs, CH3NH3, and HC(NH2)2 as A-cation, Sn and Pb as B-ion, and a combination of Cl, Br, and I as anions. The calculated gaps span over a region from 0.5 to 5.0 eV. In addition, the trends over bandgaps have been investigated: the bandgap increases with an increase of the electronegativities...

  20. Optimum design of band-gap beam structures

    DEFF Research Database (Denmark)

    Olhoff, Niels; Niu, Bin; Cheng, Gengdong

    2012-01-01

    of a single, linearly elastic material without damping. Numerical results are presented for different combinations of classical boundary conditions, prescribed orders of the upper and lower natural frequencies of maximized natural frequency gaps, and a given minimum constraint value for the beam cross......The design of band-gap structures receives increasing attention for many applications in mitigation of undesirable vibration and noise emission levels. A band-gap structure usually consists of a periodic distribution of elastic materials or segments, where the propagation of waves is impeded...

  1. Processing of nanocrystalline diamond thin films for thermal management of wide-bandgap semiconductor power electronics

    International Nuclear Information System (INIS)

    Highlights: → Studied effect of nanocrystalline diamond (NCD) deposition on device metallization. → Deposited NCD on to top of High Electron Mobility Transistors (HEMTs) and Si devices. → Temperatures below 290 deg. C for Si devices and 320 deg. C for HEMTs prevent metal damage. → Development of novel NCD-based thermal management for power electronics feasible. - Abstract: High current densities in wide-bandgap semiconductor electronics operating at high power levels results in significant self-heating of devices, which necessitates the development thermal management technologies to effectively dissipate the generated heat. This paper lays the foundation for the development of such technology by ascertaining process conditions for depositing nanocrystalline diamond (NCD) on AlGaN/GaN High Electron Mobility Transistors (HEMTs) with no visible damage to device metallization. NCD deposition is carried out on Si and GaN HEMTs with Au/Ni metallization. Raman spectroscopy, optical and scanning electron microscopy are used to evaluate the quality of the deposited NCD films. Si device metallization is used as a test bed for developing process conditions for NCD deposition on AlGaN/GaN HEMTs. Results indicate that no visible damage occurs to the device metallization for deposition conditions below 290 deg. C for Si devices and below 320 deg. C for the AlGaN/GaN HEMTs. Possible mechanisms for metallization damage above the deposition temperature are enumerated. Electrical testing of the AlGaN/GaN HEMTs indicates that it is indeed possible to deposit NCD on GaN-based devices with no significant degradation in device performance.

  2. 21 CFR 872.4620 - Fiber optic dental light.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Fiber optic dental light. 872.4620 Section 872...) MEDICAL DEVICES DENTAL DEVICES Surgical Devices § 872.4620 Fiber optic dental light. (a) Identification. A fiber optic dental light is a device that is a light, usually AC-powered, that consists of glass...

  3. Effect of Dielectric Constant Contrast and Filling Factor to Photonic Bandgap

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The effect of dielectric constant contrast and the filling factor to the photonic bandgap in a 2-D square lattice photonic crystal is discussed. The location, width and number of photonic bandgap can be modulated.

  4. A generation/recombination model assisted with two trap centers in wide band-gap semiconductors

    Science.gov (United States)

    Yamaguchi, Ken; Kuwabara, Takuhito; Uda, Tsuyoshi

    2013-03-01

    A generation/recombination (GR) model assisted with two trap centers has been proposed for studying reverse current on pn junctions in wide band-gap semiconductors. A level (Et1) has been assumed to be located near the bottom of the conduction band and the other (Et2) to be near the top of the valence band. The GR model has been developed by assuming (1) a high-electric field; F, (2) a short distance; d, between trap centers, (3) reduction in an energy-difference; Δeff = |Et1 - Et2| - eFd, and (4) hopping or tunneling conductions between trap centers with the same energy-level (Δeff ≈ 0). The GR rate has been modeled by trap levels, capture cross-sections, trap densities, and transition rate between trap centers. The GR rate, about 1010 greater than that estimated from the single-level model, has been predicted on pn junctions in a material with band-gap of 3.1 eV. Device simulations using the proposed GR model have been demonstrated for SiC diodes with and without a guard ring. A reasonable range for reverse current at room temperature has been simulated and stable convergence has been obtained in a numerical scheme for analyzing diodes with an electrically floating region.

  5. Low bandgap polymers synthesized by FeCl{sub 3} oxidative polymerization

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Tianqi [Materials and Surface Chemistry/Polymer Technology, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden); School of Materials Science and Engineering, East China University of Science and Technology, Meilong Road 130, 200237 Shanghai (China); Zhou, Yi; Zhang, Fengling; Inganaes, Olle [Biomolecular and Organic Electronics, IFM, and Centre of Organic Electronics, Linkoeping University, SE-581 83 Linkoeping (Sweden); Wang, Ergang; Hellstroem, Stefan [Materials and Surface Chemistry/Polymer Technology, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden); Xu, Shiai [School of Materials Science and Engineering, East China University of Science and Technology, Meilong Road 130, 200237 Shanghai (China); Andersson, Mats R. [Materials and Surface Chemistry/Polymer Technology, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden); Biomolecular and Organic Electronics, IFM, and Centre of Organic Electronics, Linkoeping University, SE-581 83 Linkoeping (Sweden)

    2010-07-15

    Four low bandgap polymers, combining an alkyl thiophene donor with benzo[c][1,2,5]thiadiazole, 2,3-diphenylquinoxaline, 2,3-diphenylthieno[3,4-b]pyrazine and 6,7-diphenyl-[1,2,5]thiadiazolo[3,4-g]quinoxaline acceptors in a donor-acceptor-donor architecture, were synthesized via FeCl{sub 3} oxidative polymerization. The molecular weights of the polymers were improved by introducing o-dichlorobenzene (ODCB) as the reaction solvent instead of the commonly used solvent, chloroform. The photophysical, electrochemical and photovoltaic properties of the resulting polymers were investigated and compared. The optical bandgaps of the polymers vary between 1.0 and 1.9 eV, which is promising for solar cells. The devices spin-coated from an ODCB solution of P1DB:[70]PCBM showed a power conversion efficiency of 1.08% with an open-circuit voltage of 0.91 V and a short-circuit current density of 3.36 mA cm{sup -2} under irradiation from an AM1.5G solar simulator (100 mW cm{sup -2}). (author)

  6. Optically controlled photonic bandgap structures for microstrip circuits

    CERN Document Server

    Cadman, D A

    2003-01-01

    This thesis is concerned with the optical control of microwave photonic bandgap circuits using high resistivity silicon. Photoconducting processes that occur within silicon are investigated. The influence of excess carrier density on carrier mobility and lifetime is examined. In addition, electron-hole pair recombination mechanisms (Shockley-Read-Hall, Auger, radiative and surface) are investigated. The microwave properties of silicon are examined, in particular the variation of silicon reflectivity with excess carrier density. Filtering properties of microstrip photonic bandgap structures and how they may be controlled optically are studied. A proof-of-concept microstrip photonic bandgap structure with optical control is designed, simulated and measured. With no optical illumination incident upon the silicon, the microstrip photonic bandgap structure's filtering properties are well-defined; a 3dB stopband width of 2.6GHz, a 6dB bandwidth of 2GHz and stopband depth of -11.6dB at the centre frequency of 9.9GHz...

  7. Bandgap properties of low index contrast aperiodically ordered photonic quasicrystals

    CERN Document Server

    Zito, Gianluigi; Di Gennaro, Emiliano; Andreone, Antonello; Santamato, Enrico; Abbate, Giancarlo

    2009-01-01

    We numerically analyze, using Finite Difference Time Domain simulations, the bandgap properties of photonic quasicrystals with a low index contrast. We compared 8-, 10- and 12-fold symmetry aperiodically ordered lattices with different spatial tiling. Our results show that tiling design, more than symmetry, determines the transmission properties of these structures.

  8. Bandgap Opening in Graphene Induced by Patterned Hydrogen Adsorption

    DEFF Research Database (Denmark)

    Balog, Richard; Jørgensen, Bjarke; Nilsson, Louis;

    2010-01-01

    fermions, and graphene shows ballistic charge transport, turning it into an ideal material for circuit fabrication. However, graphene lacks a bandgap around the Fermi level, which is the defining concept for semiconductor materials and essential for controlling the conductivity by electronic means. Theory...

  9. Design for maximum band-gaps in beam structures

    DEFF Research Database (Denmark)

    Olhoff, Niels; Niu, Bin; Cheng, Gengdong

    2012-01-01

    This paper aims to extend earlier optimum design results for transversely vibrating Bernoulli-Euler beams by determining new optimum band-gap beam structures for (i) different combinations of classical boundary conditions, (ii) much larger values of the orders n and n-1 of adjacent upper and lower...

  10. Experimental Studies of Charge Transport in Single Crystal Diamond Devices

    OpenAIRE

    Majdi, Saman

    2012-01-01

    Diamond is a promising material for high-power, high-frequency and high- temperature electronics applications, where its outstanding physical properties can be fully exploited. It exhibits an extremely high bandgap, very high carrier mobilities, high breakdown field strength, and the highest thermal conductivity of any wide bandgap material. It is therefore an outstanding candidate for the fastest switching, the highest power density, and the most efficient electronic devices obtainable, with...

  11. Graded-Bandgap Solar Cells Using All-Electrodeposited ZnS, CdS and CdTe Thin-Films

    Directory of Open Access Journals (Sweden)

    Obi K. Echendu

    2015-05-01

    Full Text Available A 3-layer graded-bandgap solar cell with glass/FTO/ZnS/CdS/CdTe/Au structure has been fabricated using all-electrodeposited ZnS, CdS and CdTe thin layers. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form glass/FTO/ZnS/CdS/CdTe/Au solar cell resulted in the formation of this 3-layer graded-bandgap device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >10% under AM1.5 illumination conditions at room temperature, compared to the 8.0% efficiency of a 2-layer glass/FTO/CdS/CdTe/Au reference solar cell structure. These results demonstrate the advantages of the multi-layer graded-bandgap device architecture over the conventional 2-layer structure. In addition, they demonstrate the effective application of the two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors with the elimination of the reference electrode as a possible impurity source.

  12. Chalcogenide glass hollow core photonic crystal fibers

    Science.gov (United States)

    Désévédavy, Frédéric; Renversez, Gilles; Troles, Johann; Houizot, Patrick; Brilland, Laurent; Vasilief, Ion; Coulombier, Quentin; Traynor, Nicholas; Smektala, Frédéric; Adam, Jean-Luc

    2010-09-01

    We report the first hollow core photonic crystal fibers (HC PCF) in chalcogenide glass. To design the required HC PCF profiles for such high index glass, we use both band diagram analysis to define the required photonic bandgap and numerical simulations of finite size HC PCFs to compute the guiding losses. The material losses have also been taken into account to compute the overall losses of the HC PCF profiles. These fibers were fabricated by the stack and draw technique from TeAsSe (TAS) glass. The fibers we drew in this work are composed of six rings of holes and regular microstructures. Two profiles are presented, one is known as a kagome lattice and the other one corresponds to a triangular lattice. Geometrical parameters are compared to the expected parameters obtained by computation. Applications of such fibers include power delivery or fiber sensors among others.

  13. Fabrication of micro-optical devices at the end of a multimode optical fiber with negative tone lift-off EBL

    International Nuclear Information System (INIS)

    A fabrication method based on negative tone lift off EBL is developed for constructing nano-structures at end faces of multimode optical fibers. With this new approach, precise and robust nano-structures with high spatial resolutions can be fabricated with minimum damage to the optical fiber face during the fabrication process. Based on this approach, high numerical aperture micro Fresnel zone plates (MZP) with focal lengths ∼3 µm were fabricated on the face of an optical fiber. The focusing characteristics of the fabricated MZP showed good consistency with the numerical simulations at the specified wavelength (∼405 nm). (paper)

  14. Compact and broadband waveguide taper based on partial bandgap photonic crystals

    Institute of Scientific and Technical Information of China (English)

    Jin Hou; Dingshan Gao; Huaming Wu; Zhiping Zhou

    2009-01-01

    Partial bandgap characteristics of parallelogram lattice photonic crystals are proposed to suppress the radiation modes in a compact dielectric waveguide taper so as to obtain high transmittance in a large wavelength range. Band structure of the photonic crystals shows that there exists a partial bandgap. The photonic crystals with partial bandgap are then used as the cladding of a waveguide taper to reduce the radiation loss efficiently. In comparison with the conventional dielectric taper and the complete bandgap photonic crystal taper, the partial bandgap photonic crystal taper has a high transmittance of above 85% with a wide band of 170 nm.

  15. Emergence of fiber supercapacitors.

    Science.gov (United States)

    Yu, Dingshan; Qian, Qihui; Wei, Li; Jiang, Wenchao; Goh, Kunli; Wei, Jun; Zhang, Jie; Chen, Yuan

    2015-02-01

    Supercapacitors (SCs) are energy storage devices which have high power density and long cycle life. Conventional SCs have two-dimensional planar structures. As a new family of SCs, fiber SCs utilize one-dimensional cylindrically shaped fibers as electrodes. They have attracted significant interest since 2011 and have shown great application potential either as micro-scale devices to complement or even replace micro-batteries in miniaturized electronics and microelectromechanical systems or as macro-scale devices for wearable electronics or smart textiles. This tutorial review provides an essential introduction to this new field. We first introduce the basics of performance evaluation for fiber SCs as a foundation to understand different research approaches and the diverse performance metrics reported in the literature. Next, we summarize the current state-of-the-art progress in structure design and electrode fabrication of fiber SCs. This is followed by a discussion on the integration of multiple fiber SCs and the combination with other energy harvesting or storage devices. Last, we present our perspectives on the future development of fiber SCs and highlight key technical challenges with the hope of stimulating further research progress. PMID:25420877

  16. Diamond Electronic Devices

    Science.gov (United States)

    Isberg, J.

    2010-11-01

    For high-power and high-voltage applications, silicon is by far the dominant semiconductor material. However, silicon has many limitations, e.g. a relatively low thermal conductivity, electric breakdown occurs at relatively low fields and the bandgap is 1.1 eV which effectively limits operation to temperatures below 175° C. Wide-bandgap materials, such as silicon carbide (SiC), gallium nitride (GaN) and diamond offer the potential to overcome both the temperature and power handling limitations of silicon. Diamond is the most extreme in this class of materials. By the fundamental material properties alone, diamond offers the largest benefits as a semiconductor material for power electronic applications. On the other hand, diamond has a problem with a large carrier activation energy of available dopants which necessitates specialised device concepts to allow room temperature (RT) operation. In addition, the role of common defects on the charge transport properties of diamond is poorly understood. Notwithstanding this, many proof-of-principle two-terminal and three-terminal devices have been made and tested. Two-terminal electronic diamond devices described in the literature include: p-n diodes, p-i-n diodes, various types of radiation detectors, Schottky diodes and photoconductive or electron beam triggered switches. Three terminal devices include e.g. MISFETs and JFETs. However, the development of diamond devices poses great challenges for the future. A particularly interesting way to overcome the doping problem, for which there has been some recent progress, is to make so-called delta doped (or pulse-doped) devices. Such devices utilise very thin (˜1 nm) doped layers in order to achieve high RT activation.

  17. Diamond Electronic Devices

    International Nuclear Information System (INIS)

    For high-power and high-voltage applications, silicon is by far the dominant semiconductor material. However, silicon has many limitations, e.g. a relatively low thermal conductivity, electric breakdown occurs at relatively low fields and the bandgap is 1.1 eV which effectively limits operation to temperatures below 175 deg.n C. Wide-bandgap materials, such as silicon carbide (SiC), gallium nitride (GaN) and diamond offer the potential to overcome both the temperature and power handling limitations of silicon. Diamond is the most extreme in this class of materials. By the fundamental material properties alone, diamond offers the largest benefits as a semiconductor material for power electronic applications. On the other hand, diamond has a problem with a large carrier activation energy of available dopants which necessitates specialised device concepts to allow room temperature (RT) operation. In addition, the role of common defects on the charge transport properties of diamond is poorly understood. Notwithstanding this, many proof-of-principle two-terminal and three-terminal devices have been made and tested. Two-terminal electronic diamond devices described in the literature include: p-n diodes, p-i-n diodes, various types of radiation detectors, Schottky diodes and photoconductive or electron beam triggered switches. Three terminal devices include e.g. MISFETs and JFETs. However, the development of diamond devices poses great challenges for the future. A particularly interesting way to overcome the doping problem, for which there has been some recent progress, is to make so-called delta doped (or pulse-doped) devices. Such devices utilise very thin (∼1 nm) doped layers in order to achieve high RT activation.

  18. Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

    Directory of Open Access Journals (Sweden)

    Luigi Sirleto

    2010-11-01

    Full Text Available Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

  19. Quantum well effect based on hybridization bandgap in deep subwavelength coupled meta-atoms

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yongqiang; Li, Yunhui, E-mail: liyunhui@tongji.edu.cn; Wu, Qian; Jiang, Haitao; Zhang, Yewen; Chen, Hong

    2015-09-01

    In this paper, quantum well (QW) effect in a hybridization bandgap (HBG) structure via hiring deep subwavelength coupled meta-atoms is investigated. Subwavelength zero-index-metamaterial-based resonators acting as meta-atoms are side-coupled to a microstrip, forming the HBG structure. Both numerical and microwave experimental results confirm that, through properly hiring another set of meta-atoms, band mismatch between two HBGs can be introduced resulting in the HBG QW effect. Compared with the conventional QW structure based on Bragg interferences in photonic crystal, the device length of the proposed HBG QW structure can be reduced to only 1/4, demonstrating well the deep subwavelength property. Therefore, the above features make our design of HBG QW structures suitable to be utilized as multi-channel filters or multiplexers in microwave and optical communication system.

  20. Non-resonant below-bandgap two-photon absorption in quantum dot solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Li, Tian; Dagenais, Mario, E-mail: dage@ece.umd.edu [Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742 (United States)

    2015-04-27

    We study the optically nonlinear sub-bandgap photocurrent generation facilitated by an extended tailing distribution of states in an InAs/GaAs quantum dots (QDs) solar cell. The tailing states function as both the energy states for low energy photon absorption and the photocarriers extraction pathway. One of the biggest advantages of our method is that it can clearly differentiate the photocurrent due to one-photon absorption (1PA) process and two-photon absorption (2PA) process. Both 1PA and 2PA photocurrent generation efficiency in an InAs/GaAs QD device operated at 1550 nm have been quantitatively evaluated. A two-photon absorption coefficient β = 5.7 cm/GW is extracted.

  1. Optimization of molecular organization and nanoscale morphology for high performance low bandgap polymer solar cells.

    Science.gov (United States)

    He, Ming; Wang, Mengye; Lin, Changjian; Lin, Zhiqun

    2014-04-21

    Rational design and synthesis of low bandgap (LBG) polymers with judiciously tailored HOMO and LUMO levels have emerged as a viable route to high performance polymer solar cells with power conversion efficiencies (PCEs) exceeding 10%. In addition to engineering the energy-level of LBG polymers, the photovoltaic performance of LBG polymer-based solar cells also relies on the device architecture, in particular the fine morphology of the photoactive layer. The nanoscale interpenetrating networks composed of nanostructured donor and acceptor phases are the key to providing a large donor-acceptor interfacial area for maximizing the exciton dissociation and offering a continuous pathway for charge transport. In this Review Article, we summarize recent strategies for tuning the molecular organization and nanoscale morphology toward an enhanced photovoltaic performance of LBG polymer-based solar cells.

  2. Microstructured fibers for high power applications

    Science.gov (United States)

    Baggett, J. C.; Petrovich, M. N.; Hayes, J. R.; Finazzi, V.; Poletti, F.; Amezcua, R.; Broderick, N. G. R.; Richardson, D. J.; Monro, T. M.; Salter, P. L.; Proudley, G.; O'Driscoll, E. J.

    2005-10-01

    Fiber delivery of intense laser radiation is important for a broad range of application sectors, from medicine through to industrial laser processing of materials, and offers many practical system design and usage benefits relative to free space solutions. Optical fibers for high power transmission applications need to offer low optical nonlinearity and high damage thresholds. Single-mode guidance is also often a fundamental requirement for the many applications in which good beam quality is critical. In recent years, microstructured fiber technology has revolutionized the dynamic field of optical fibers, bringing with them a wide range of novel optical properties. These fibers, in which the cladding region is peppered with many small air holes, are separated into two distinct categories, defined by the way in which they guide light: (1) index-guiding holey fibers (HFs), in which the core is solid and light is guided by a modified form of total internal reflection, and (2) photonic band-gap fibers (PBGFs) in which guidance in a hollow core can be achieved via photonic band-gap effects. Both of these microstructured fiber types offer attractive qualities for beam delivery applications. For example, using HF technology, large-mode-area, pure silica fibers with robust single-mode guidance over broad wavelength ranges can be routinely fabricated. In addition, the ability to guide light in an air-core within PBGFs presents obvious power handling advantages. In this paper we review the fundamentals and current status of high power, high brightness, beam delivery in HFs and PBGFs, and speculate as to future prospects.

  3. Feasibility of measuring gastric emptying time, with a wireless motility device, after subjects consume fiber-matched liquid and solid breakfasts.

    Science.gov (United States)

    Willis, Holly J; Thomas, William; Willis, David J; Slavin, Joanne L

    2011-08-01

    To explore the feasibility and sensitivity of a new technology for measuring gastric emptying time (GET) in appetite research, and also to compare appetite after subjects consumed macronutrient- and fiber-matched liquid and solid meals. Fourteen women (BMI of 21.2 ± 0.3) participated in this randomized, crossover study. On two separate days, fasted subjects consumed liquid (fruit juices and skim milk) and solid (oatmeal, blueberries, and apples) breakfasts. Both meals had 10 g of fiber and 410 kcal. GET was assessed with the SmartPill GI Motility System®, appetite was assessed with visual analog scales, and food intake was measured at lunch. Despite the same amount of fiber, GET was about 1h longer after the oatmeal than after the liquids. Subjects were less hungry after the oatmeal than after the liquids. Satisfaction and fullness were marginally improved with the oatmeal compared to the liquids. There was a negative association between GET and hunger. Lunchtime food and beverage intake did not differ between treatments. The SmartPill appears feasible and sensitive in appetite research, but has limitations. A solid meal with naturally occurring fiber from oatmeal and whole fruits increased GET and decreased hunger more than a liquid meal with added fiber.

  4. Low Loss Plastic Terahertz Photonic Band-Gap Fibres

    Institute of Scientific and Technical Information of China (English)

    GENG You-Fu; TAN Xiao-Ling; ZHONG Kai; WANG Peng; YAO Jian-Quan

    2008-01-01

    We report a numerical investigation on terahertz wave propagation in plastic photonic band-gap fibres which are characterized by a 19-unit-cell air core and hexagonal air holes with rounded corners in cladding. Using the finite element method, the leakage loss and absorption loss are calculated and the transmission properties are analysed.The lowest loss of 0.268 dB/m is obtained. Numerical results show that the fibres could liberate the constraints of background materials beyond the transparency region in terahertz wave band, and efficiently minimize the effect of absorption by background materials, which present great advantage of plastic photonic band-gap fibres in long distance terahertz delivery.

  5. Band structure of germanium carbides for direct bandgap silicon photonics

    Science.gov (United States)

    Stephenson, C. A.; O'Brien, W. A.; Penninger, M. W.; Schneider, W. F.; Gillett-Kunnath, M.; Zajicek, J.; Yu, K. M.; Kudrawiec, R.; Stillwell, R. A.; Wistey, M. A.

    2016-08-01

    Compact optical interconnects require efficient lasers and modulators compatible with silicon. Ab initio modeling of Ge1-xCx (x = 0.78%) using density functional theory with HSE06 hybrid functionals predicts a splitting of the conduction band at Γ and a strongly direct bandgap, consistent with band anticrossing. Photoreflectance of Ge0.998C0.002 shows a bandgap reduction supporting these results. Growth of Ge0.998C0.002 using tetrakis(germyl)methane as the C source shows no signs of C-C bonds, C clusters, or extended defects, suggesting highly substitutional incorporation of C. Optical gain and modulation are predicted to rival III-V materials due to a larger electron population in the direct valley, reduced intervalley scattering, suppressed Auger recombination, and increased overlap integral for a stronger fundamental optical transition.

  6. Treating temperature effect on bandgap in polymer opal photonic crystals

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The optical reflective spectra and microstruc- tures of polystyrene opal photonic crystals treated with dif- ferent temperatures have been investigated. With tempera- ture increasing, the polystyrene spheres in opal structure transform to dodecahedrons, and the peak of reflective spec- trum moves to shorter wavelength. The experiment result testifies the effect of the effective refractive index and the filling ratio to the bandgap position, and it corresponds to the theoretical simulative result.

  7. Three-dimensional metallic photonic crystals with optical bandgaps.

    Science.gov (United States)

    Vasilantonakis, Nikos; Terzaki, Konstantina; Sakellari, Ioanna; Purlys, Vytautas; Gray, David; Soukoulis, Costas M; Vamvakaki, Maria; Kafesaki, Maria; Farsari, Maria

    2012-02-21

    The fabrication of fully three-dimensional photonic crystals with a bandgap at optical wavelengths is demonstrated by way of direct femtosecond laser writing of an organic-inorganic hybrid material with metal-binding moieties, and selective silver coating using electroless plating. The crystals have 600-nm intralayer periodicity and sub-100 nm features, and they exhibit well-defined diffraction patterns. PMID:22278944

  8. Tapered GRIN fiber microsensor.

    Science.gov (United States)

    Beltrán-Mejía, Felipe; Biazoli, Claudecir R; Cordeiro, Cristiano M B

    2014-12-15

    The sensitivity of an optical fiber microsensor based on inter-modal interference can be considerably improved by tapering a short extension of the multimode fiber. In the case of Graded Index fibers with a parabolic refractive index profile, a meridional ray exhibits a sinusoidal path. When these fibers are tapered, the period of the propagated beam decrease down-taper and increase up-taper. We take advantage of this modulation -along with the enhanced overlap between the evanescent field and the external medium- to substantially increase the sensitivity of these devices by tuning the sensor's maximum sensitivity wavelength. Moreover, the extension of this device is reduced by one order of magnitude, making it more propitious for reduced space applications. Numerical and experimental results demonstrate the success and feasibility of this approach. PMID:25606989

  9. Structure and optical bandgap relationship of π-conjugated systems.

    Science.gov (United States)

    Botelho, André Leitão; Shin, Yongwoo; Liu, Jiakai; Lin, Xi

    2014-01-01

    In bulk heterojunction photovoltaic systems both the open-circuit voltage as well as the short-circuit current, and hence the power conversion efficiency, are dependent on the optical bandgap of the electron-donor material. While first-principles methods are computationally intensive, simpler model Hamiltonian approaches typically suffer from one or more flaws: inability to optimize the geometries for their own input; absence of general, transferable parameters; and poor performance for non-planar systems. We introduce a set of new and revised parameters for the adapted Su-Schrieffer-Heeger (aSSH) Hamiltonian, which is capable of optimizing geometries, along with rules for applying them to any [Formula: see text]-conjugated system containing C, N, O, or S, including non-planar systems. The predicted optical bandgaps show excellent agreement to UV-vis spectroscopy data points from literature, with a coefficient of determination [Formula: see text], a mean error of -0.05 eV, and a mean absolute deviation of 0.16 eV. We use the model to gain insights from PEDOT, fused thiophene polymers, poly-isothianaphthene, copolymers, and pentacene as sources of design rules in the search for low bandgap materials. Using the model as an in-silico design tool, a copolymer of benzodithiophenes along with a small-molecule derivative of pentacene are proposed as optimal donor materials for organic photovoltaics.

  10. Structure and optical bandgap relationship of π-conjugated systems.

    Directory of Open Access Journals (Sweden)

    André Leitão Botelho

    Full Text Available In bulk heterojunction photovoltaic systems both the open-circuit voltage as well as the short-circuit current, and hence the power conversion efficiency, are dependent on the optical bandgap of the electron-donor material. While first-principles methods are computationally intensive, simpler model Hamiltonian approaches typically suffer from one or more flaws: inability to optimize the geometries for their own input; absence of general, transferable parameters; and poor performance for non-planar systems. We introduce a set of new and revised parameters for the adapted Su-Schrieffer-Heeger (aSSH Hamiltonian, which is capable of optimizing geometries, along with rules for applying them to any [Formula: see text]-conjugated system containing C, N, O, or S, including non-planar systems. The predicted optical bandgaps show excellent agreement to UV-vis spectroscopy data points from literature, with a coefficient of determination [Formula: see text], a mean error of -0.05 eV, and a mean absolute deviation of 0.16 eV. We use the model to gain insights from PEDOT, fused thiophene polymers, poly-isothianaphthene, copolymers, and pentacene as sources of design rules in the search for low bandgap materials. Using the model as an in-silico design tool, a copolymer of benzodithiophenes along with a small-molecule derivative of pentacene are proposed as optimal donor materials for organic photovoltaics.

  11. Increased Functionality Porous Optical Fiber Structures

    OpenAIRE

    Wooddell, Michael Gary

    2007-01-01

    A novel fiber optic structure, termed stochastic ordered hole fibers, has been developed that contains an ordered array of six hollow tubes surrounding a hollow core, combined with a nanoporous glass creating a unique fully three dimensional pore/fiber configuration. The objective of this study is to increase the functionality of these stochastic ordered hole fibers, as well as porous clad fibers, by integrating electronic device components such as conductors, and semiconductor...

  12. Dietary Fiber

    Science.gov (United States)

    Fiber is a substance in plants. Dietary fiber is the kind you eat. It's a type of carbohydrate. You may also see it listed on a food label as soluble fiber or insoluble fiber. Both types have important health benefits. Good sources of dietary fiber include Whole grains Nuts ...

  13. Efficient photovoltaic cells from low band-gap fluorene-based copolymer

    Institute of Scientific and Technical Information of China (English)

    Tian Ren-Yu; Yang Ren-Qiang; Peng Jun-Biao; Cao Yong

    2005-01-01

    Polymer photovoltaic cells based on low band-gap copolymer, poly [2,7-(9,9-dioctyl) fluorene-co-5,5'-(4,7-diselenophenyl)-2,2'-yl-2,1,3-benzothiadiazole] (PFSeBT) are investigated, focusing on the effects of cathode and blend concentration on device performance. The best device, with active layer from PFSeBT:PCBM=1:2 blend and with LiF/Al as cathode, achieves an open-circuit voltage of 1.00V, a short-circuit current density of 4.42mA/cm2, and energy conversion efficiency of 1.67% under AM1.5 illumination (100mW/cm2).The short-circuit current density indicates the dependence of power law on the incident light intensity with a power index of 0.887. All devices have a spectral response up to 680nm. The results indicate that PFSeBT is a potential polymer functioning as an electron donor in polymer photovoltaic cells.

  14. Application of Adsorption Device of Activated Carbon Fiber to Recovery of CFCs%活性炭纤维吸附装置在发泡剂CFCs回收中的应用

    Institute of Scientific and Technical Information of China (English)

    薛全民; 崔贵芹; 赵胜

    2012-01-01

    In the process of waste refrigerator disassembly, polyurethane foam would release large quantity of CFC - 11. CFCs was one of important greenhouse gases, so it was important to recycle CFCs from the exhaust gas of waste refrigerator disassembly. The device used activated carbon fiber for adsorption material was described, which had many virtues of automatically, advanced technology, and the use of efficient adsorbents - activated carbon fiber. The operation practice showed that CFCs from waste refrigerator disassembly could be disposed by the device.%在冰箱拆卸过程中,聚氨酯硬质泡沫会释放出大量CFCs,而CFCs是重要的温室气体之一,因此,冰箱拆卸过程中尾气中CFCs回收受到大家重视。本文介绍了利用活性炭纤维回收家电拆卸过程中释放出氟里昂的装置。该装置自动运行,工艺先进,并且利用高效的吸附剂一活性炭纤维。运行实践表明,利用该装置可以有效的处理冰箱拆卸过程中释放出的CFCs。

  15. Grazing incidence angle based sensing approach integrated with fiber-optic Fourier transform infrared (FO-FTIR) spectroscopy for remote and label-free detection of medical device contaminations

    International Nuclear Information System (INIS)

    Contamination of medical devices has become a critical and prevalent public health safety concern since medical devices are being increasingly used in clinical practices for diagnostics, therapeutics and medical implants. The development of effective sensing methods for real-time detection of pathogenic contamination is needed to prevent and reduce the spread of infections to patients and the healthcare community. In this study, a hollow-core fiber-optic Fourier transform infrared spectroscopy methodology employing a grazing incidence angle based sensing approach (FO-FTIR-GIA) was developed for detection of various biochemical contaminants on medical device surfaces. We demonstrated the sensitivity of FO-FTIR-GIA sensing approach for non-contact and label-free detection of contaminants such as lipopolysaccharide from various surface materials relevant to medical device. The proposed sensing system can detect at a minimum loading concentration of approximately 0.7 μg/cm2. The FO-FTIR-GIA has the potential for the detection of unwanted pathogen in real time

  16. Grazing incidence angle based sensing approach integrated with fiber-optic Fourier transform infrared (FO-FTIR) spectroscopy for remote and label-free detection of medical device contaminations

    Energy Technology Data Exchange (ETDEWEB)

    Hassan, Moinuddin, E-mail: moinuddin.hassan@fda.hhs.gov; Ilev, Ilko [Optical Therapeutics and Medical Nanophotonics Laboratory, Division of Biomedical Physics, Office of Science and Engineering Laboratories, Center for Devices and Radiological Health, U.S. Food and Drug Administration, Silver Spring, Maryland 20993 (United States)

    2014-10-15

    Contamination of medical devices has become a critical and prevalent public health safety concern since medical devices are being increasingly used in clinical practices for diagnostics, therapeutics and medical implants. The development of effective sensing methods for real-time detection of pathogenic contamination is needed to prevent and reduce the spread of infections to patients and the healthcare community. In this study, a hollow-core fiber-optic Fourier transform infrared spectroscopy methodology employing a grazing incidence angle based sensing approach (FO-FTIR-GIA) was developed for detection of various biochemical contaminants on medical device surfaces. We demonstrated the sensitivity of FO-FTIR-GIA sensing approach for non-contact and label-free detection of contaminants such as lipopolysaccharide from various surface materials relevant to medical device. The proposed sensing system can detect at a minimum loading concentration of approximately 0.7 μg/cm{sup 2}. The FO-FTIR-GIA has the potential for the detection of unwanted pathogen in real time.

  17. UHMWPE纤维的表面改性及其在网式阻车器中的应用%RESEARCH ON SURFACE MODIFICATION OF UHMWPE FIBER AND ITS APPLICATION IN VEHICLE ARRESTING DEVICE

    Institute of Scientific and Technical Information of China (English)

    庄维伟; 乔咏梅; 庄私炜

    2012-01-01

    本文简要介绍了超高分子量聚乙烯(UHMWPE)纤维的性能,总结了超高分子量聚乙烯纤维等离子处理法、氧化处理法、电晕放电处理法、辐射引发表面接枝处理等多种表面处理万法,讨论了这些表面处理万法对纤维增强复合材料粘结性能和本体力学性能的影响,分析了这些万法的处理效果、处理工艺等对实现连续化、工业化可行性的影响,并介绍了由UHMWPE纤维为原料制成的特种纤维网片在网式阻车器这个反恐领域的特殊应用.%The properties of ultra-high molecular weight polyethylene ( UHMWPE) fibers are introduced briefly, and the surface modification methods of UHMWPE fibers are summarized, such as plasma treatment, oxidation treatment, corona discharge treatment and so on. This paper centers on the discussion of the interfacial bonding strength and mechanical properties of treated UHMWPE fibers reinforced resin composites, and the effect of treatment effect, treatment process and other aspects of these methods on feasibility of achieving continuous and industrial production are discussed. At the mean time, the application of special mesh made of UHMWPE fibers used in vehicle arresting device attached to the counter-terrorism is introduced.

  18. Optical fiber rotation sensing

    CERN Document Server

    Burns, William K; Kelley, Paul

    1993-01-01

    Optical Fiber Rotation Sensing is the first book devoted to Interferometric Fiber Optic Gyros (IFOG). This book provides a complete overview of IFOGs, beginning with a historical review of IFOG development and including a fundamental exposition of basic principles, a discussion of devices and components, and concluding with industry reports on state-of-the-art activity. With several chapters contributed by principal developers of this solid-state device, the result is an authoritative work which will serve as the resource for researchers, students, and users of IFOGs.* * State-of-t

  19. Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

    International Nuclear Information System (INIS)

    A plasma system with a complementary filter to shield samples from damage during tetrafluoromethane (CF4) plasma treatment was proposed in order to incorporate fluorine atoms into gadolinium oxide nanocrystals (Gd2O3-NCs) for flash memory applications. X-ray photoelectron spectroscopy confirmed that fluorine atoms were successfully introduced into the Gd2O3-NCs despite the use of a filter in the plasma-enhanced chemical vapour deposition system to shield against several potentially damaging species. The number of incorporated fluorine atoms can be controlled by varying the treatment time. The optimized memory window of the resulting flash memory devices was twice that of devices treated by a filterless system because more fluorine atoms were incorporated into the Gd2O3-NCs film with very little damage. This enlarged the bandgap energy from 5.48 to 6.83 eV, as observed by ultraviolet absorption measurements. This bandgap expansion can provide a large built-in electric field that allows more charges to be stored in the Gd2O3-NCs. The maximum improvement in the retention characteristic was >60%. Because plasma damage during treatment is minimal, maximum fluorination can be achieved. The concept of simply adding a filter to a plasma system to prevent plasma damage exhibits great promise for functionalization or modification of nanomaterials for advanced nanoelectronics while introducing minimal defects. (paper)

  20. A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

    Energy Technology Data Exchange (ETDEWEB)

    Lamichhane, Ranjan [University of Arkansas; Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; BRITTONJr., CHARLES L. [Oak Ridge National Laboratory (ORNL); Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Matt [APEI, Inc.; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas; Podar, Mircea [ORNL; Perez, M [University of Arkansas; Mcnutt, Tyler [APEI, Inc.; Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.

    2014-01-01

    Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.

  1. High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters

    Science.gov (United States)

    Wanlass, Mark W.

    2011-11-29

    A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

  2. Temperature level fiber sensor network

    OpenAIRE

    López Higuera, José Miguel; Rodríguez Cobo, Luis; Castrellón Uribe, Jesús; Quintela Incera, Antonio; Lomer Barboza, Mauro Matías

    2013-01-01

    A temperature level fiber sensor network is proposed and demonstrated. Each inline transducer is based on a FBG-SMA wire structure working as an on/off optical device being interrogated using a time domain technique.

  3. Using Protection Layers for a 2-Photon Water Splitting Device

    DEFF Research Database (Denmark)

    Seger, Brian; Mei, Bastian Timo; Frydendal, Rasmus;

    2015-01-01

    optimized to absorb low energy photons (small bandgap). To a large degree this approach has been hindered by corrosion issues. In this talk I will first discuss how our computational screening of 2,400 materials showed that very few materials can efficiently absorb light without corroding in water splitting......The 2-photon tandem device for photocatalytic water splitting has been theoretically shown to provide a higher efficiency than a single photon device(1). This increased efficiency can be achieved by having one material optimized to absorb high energy photons (large bandgap) and another material...

  4. True photonic band-gap mode-control in VCSEL structures

    DEFF Research Database (Denmark)

    Romstad, F.; Madsen, M.; Birkedal, Dan;

    2003-01-01

    Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect.......Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....

  5. Bandgap isotropy in photonic quasicrystals with low-index contrast

    Science.gov (United States)

    Andreone, Antonello; Abbate, Giancarlo; Di Gennaro, Emiliano; Rose Thankamani, Priya

    2012-05-01

    Formation and development of the photonic band gap in two-dimensional 8-, 10-, and 12-fold symmetry quasicrystalline lattices of low-index contrast are reported. Finite-size structures made of dielectric cylindrical rods are studied and measured in the microwave region, and their properties are compared with a conventional hexagonal crystal. Band-gap characteristics are investigated by changing the direction of propagation of the incident beam inside the crystal. Various angles of incidence are used to investigate the isotropic nature of the band gap.

  6. Waveguidance by the photonic bandgap effect in optical fibres

    DEFF Research Database (Denmark)

    Broeng, Jes; Søndergaard, Thomas; Barkou, Stig Eigil;

    1999-01-01

    Photonic crystals form a new class of intriguing building blocks to be utilized in future optoelectronics and electromagnetics. One of the most exciting possiblilties offered by phtonic crystals is the realization of new types of electromagnetic waveguides. In the optical domain, the most mature...... technology for such photonic bandgap (PBG) waveguides is in optical fibre configurations. These new fibres can be classified in a fundamentally different way to all optical waveguides and possess radically different guiding properties due to PBG guidance, as opposed to guidance by total internal refelction...

  7. New Curvature-Compensated CMOS Bandgap Voltage Reference

    Institute of Scientific and Technical Information of China (English)

    Lu Shen; Ning Ning; Qi Yu; Yan Luo; Chun-Sheng Li

    2007-01-01

    A novel curvaturecompensated CMOS bandgap voltage reference is presented. The reference utilizes two first order temperature compensations generated from the nonlinearity of the finite current gain β of vertical pnp bipolar transistor. The proposed circuit,designed in a standard 0.18 μm CMOS process, achieves a good temperature coefficient of 2.44 ppm/℃ with temperature range from 40 ℃ to 85 ℃, and about 4 mV supply voltage variation in the range from 1.4 V to 2.4 V. With a 1.8 V supply voltage, the power supply rejection ratio is 56 dB at 10 MHz.

  8. Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap

    Science.gov (United States)

    Mohsen, Mahmoudi; Zahra, Ahangari; Morteza, Fathipour

    2016-01-01

    The electrical characteristics of a double-gate armchair silicene nanoribbon field-effect-transistor (DG ASiNR FET) are thoroughly investigated by using a ballistic quantum transport model based on non-equilibrium Green’s function (NEGF) approach self-consistently coupled with a three-dimensional (3D) Poisson equation. We evaluate the influence of variation in uniaxial tensile strain, ribbon temperature and oxide thickness on the on-off current ratio, subthreshold swing, transconductance and the delay time of a 12-nm-length ultranarrow ASiNR FET. A novel two-parameter strain magnitude and temperature-dependent model is presented for designing an optimized device possessing balanced amelioration of all the electrical parameters. We demonstrate that employing HfO2 as the gate insulator can be a favorable choice and simultaneous use of it with proper combination of temperature and strain magnitude can achieve better device performance. Furthermore, a general model power (GMP) is derived which explicitly provides the electron effective mass as a function of the bandgap of a hydrogen passivated ASiNR under strain.

  9. Bandgap opening in few-layered monoclinic MoTe2

    Science.gov (United States)

    Keum, Dong Hoon; Cho, Suyeon; Kim, Jung Ho; Choe, Duk-Hyun; Sung, Ha-Jun; Kan, Min; Kang, Haeyong; Hwang, Jae-Yeol; Kim, Sung Wng; Yang, Heejun; Chang, K. J.; Lee, Young Hee

    2015-06-01

    Layered transition metal dichalcogenides (TMDs) have attracted renewed interest owing to their potential use as two-dimensional components in next-generation devices. Although group 6 TMDs, such as MX2 with M = (Mo, W) and X = (S, Se, Te), can exist in several polymorphs, most studies have been conducted with the semiconducting hexagonal (2H) phase as other polymorphs often exhibit inhomogeneous formation. Here, we report a reversible structural phase transition between the hexagonal and stable monoclinic (distorted octahedral or 1T') phases in bulk single-crystalline MoTe2. Furthermore, an electronic phase transition from semimetallic to semiconducting is shown as 1T'-MoTe2 crystals go from bulk to few-layered. Bulk 1T'-MoTe2 crystals exhibit a maximum carrier mobility of 4,000 cm2 V-1 s-1 and a giant magnetoresistance of 16,000% in a magnetic field of 14 T at 1.8 K. In the few-layered form, 1T'-MoTe2 exhibits a bandgap opening of up to 60 meV, which our density functional theory calculations identify as arising from strong interband spin-orbit coupling. We further clarify that the Peierls distortion is a key mechanism to stabilize the monoclinic structure. This class of semiconducting MoTe2 unlocks the possibility of topological quantum devices based on non-trivial Z2-band-topology quantum spin Hall insulators in monoclinic TMDs (ref. ).

  10. Atomically thin arsenene and antimonene: semimetal-semiconductor and indirect-direct band-gap transitions.

    Science.gov (United States)

    Zhang, Shengli; Yan, Zhong; Li, Yafei; Chen, Zhongfang; Zeng, Haibo

    2015-03-01

    The typical two-dimensional (2D) semiconductors MoS2, MoSe2, WS2, WSe2 and black phosphorus have garnered tremendous interest for their unique electronic, optical, and chemical properties. However, all 2D semiconductors reported thus far feature band gaps that are smaller than 2.0 eV, which has greatly restricted their applications, especially in optoelectronic devices with photoresponse in the blue and UV range. Novel 2D mono-elemental semiconductors, namely monolayered arsenene and antimonene, with wide band gaps and high stability were now developed based on first-principles calculations. Interestingly, although As and Sb are typically semimetals in the bulk, they are transformed into indirect semiconductors with band gaps of 2.49 and 2.28 eV when thinned to one atomic layer. Significantly, under small biaxial strain, these materials were transformed from indirect into direct band-gap semiconductors. Such dramatic changes in the electronic structure could pave the way for transistors with high on/off ratios, optoelectronic devices working under blue or UV light, and mechanical sensors based on new 2D crystals.

  11. DEVELOPMENT OF A CANDLE FILTER FAILURE SAFEGUARD DEVICE

    Energy Technology Data Exchange (ETDEWEB)

    G.J. Bruck; E.E. Smeltzer; Z.N. Sanjana

    2002-06-06

    Development, testing and optimization of advanced metal and ceramic, barrier and fiber safeguard devices (SGDs) is described. Metal barrier devices are found prone to manufacturing defects and premature blinding. Fiber devices are found to be satisfactory if fine fibers are used. Durable alloys are identified for both oxidation and gasification conditions. Ceramic honeycomb SGDs were found to perform as excellent barrier devices. Optimization has shown such devices to be durable. Field testing of ceramic honeycomb SGDs from two different manufacturers is being pursued.

  12. High dno/dT liquid crystals and their applications in a thermally tunable liquid crystal photonic crystal fiber

    DEFF Research Database (Denmark)

    Li, J.; Gauza, S.; Wu, S.-T.;

    2006-01-01

    crystal mixtures, designated as UCF-1 and UCF-2. The dn(o)/dT of UCF-1 is similar to 4x higher than that of 5CB at room temperature. By infiltrating UCF-1 into the air holes of a three-rod core photonic crystal fiber, we demonstrate a thermally tunable photonic bandgap fiber with tuning sensitivity of 27...

  13. Alignment reference device

    Science.gov (United States)

    Patton, Gail Y.; Torgerson, Darrel D.

    1987-01-01

    An alignment reference device provides a collimated laser beam that minimizes angular deviations therein. A laser beam source outputs the beam into a single mode optical fiber. The output end of the optical fiber acts as a source of radiant energy and is positioned at the focal point of a lens system where the focal point is positioned within the lens. The output beam reflects off a mirror back to the lens that produces a collimated beam.

  14. Graded bandgap semiconduc-tor thin film photoelectrodes

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    A graded bandgap oxide semiconductor thin film electrode was designed in order to obtain a photoelectrochemically stable photoelectrode, with wide absorption range. The graded bandgap Ti1-xVxO2 film electrode was prepared by heating the stacked layers of V/Ti in varying ratios, which were coated on the substrate by the sol-gel method using the starting solution with various V/Ti ratios. XPS result showed that the composition gradient was achieved for the film. The Ti1-xVxO2 film electrode was found to be photoelectrochemically stable. Its photovoltage was about 360 mV. Obvious visible light photoresponse was observed for the Ti1-xVxO2 film electrode. Compared with the pure TiO2 electrode, the photocurrent onset potential of the Ti1-xVxO2 film electrode was shifted positively, probably because the accumulation of vanadium at the electrode sur-face causes the recombination of the electrons and holes, and the lowest level of the conduction band of Ti1-xVxO2 is lower than that of TiO2. Impedance analysis showed that the donor density of the Ti1-xVxO2 film electrode was higher than that of TiO2 film electrode.

  15. Electronic structure characterization and bandgap engineeringofsolar hydrogen materials

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jinghua

    2007-11-01

    Bandgap, band edge positions as well as the overall band structure of semiconductors are of crucial importance in photoelectrochemical and photocatalytic applications. The energy position of the band edge level can be controlled by the electronegativity of the dopants, the pH of the solution (flatband potential variation of 60 mV per pH unit), as well as by quantum confinement effects. Accordingly, band edges and bandgap can be tailored to achieve specific electronic, optical or photocatalytic properties. Synchrotron radiation with photon energy at or below 1 keV is giving new insight into such areas as condensed matter physics and extreme ultraviolet optics technology. In the soft x-ray region, the question tends to be, what are the electrons doing as they migrated between the atoms. In this paper, I will present a number of soft x-ray spectroscopic study of nanostructured 3d metal compounds Fe{sub 2}O{sub 3} and ZnO.

  16. Wide-bandgap epitaxial heterojunction windows for silicon solar cells

    Science.gov (United States)

    Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland; Sekula-Moise, Patricia A.; Vernon, Stanley M.

    1990-01-01

    It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

  17. Fiber optic gas sensor

    Science.gov (United States)

    Chen, Peng (Inventor); Buric, Michael P. (Inventor); Swinehart, Philip R. (Inventor); Maklad, Mokhtar S. (Inventor)

    2010-01-01

    A gas sensor includes an in-fiber resonant wavelength device provided in a fiber core at a first location. The fiber propagates a sensing light and a power light. A layer of a material is attached to the fiber at the first location. The material is able to absorb the gas at a temperature dependent gas absorption rate. The power light is used to heat the material and increases the gas absorption rate, thereby increasing sensor performance, especially at low temperatures. Further, a method is described of flash heating the gas sensor to absorb more of the gas, allowing the sensor to cool, thereby locking in the gas content of the sensor material, and taking the difference between the starting and ending resonant wavelengths as an indication of the concentration of the gas in the ambient atmosphere.

  18. Fiber based optofluidic biosensors

    Science.gov (United States)

    Lismont, M.; Vandewalle, N.; Joris, B.; Dreesen, L.

    2014-09-01

    Medicinal diagnosis requires the development of innovative devices allowing the detection of small amounts of biological species. Among the large variety of available biosensors, the ones based on fluorescence phenomenon are really promising. Here, we show a prototype of the basic unit of a multi-sensing biosensor combining optics and microfluidics benefits. This unit makes use of two crossed optical fibers: the first fiber is used to carry small probe molecules droplets and excite fluorescence, while the second one is devoted to target molecules droplets transport and fluorescence detection. Within this scheme, the interaction takes place in each fiber node. The main benefits of this detection setup are the absence of fibers functionalization, the use of microliter volumes of target and probe species, their separation before interaction, and a better detection limit compared to cuvettes setups.

  19. A simple model for approximate bandgap structure calculation of all-solid photonic bandgap fibre based on an array of rings

    Institute of Scientific and Technical Information of China (English)

    Fang Hong; Lou Shu-Qin; Guo Tie-Ying; Yao Lei; Li nong-Lei; Jian ShuiSheng

    2008-01-01

    A simple model for approximate bandgap structure caculation of all-solid photonic bandgap fibre based on an array of rings is proposed.In this model calculated are only the potential modes of a unit cell,which is a high-index ring in the low-index background for this fibre,rather than the whole cladding periodic structure based on Bloch's theorem to find the bandgap.Its accuracy is proved by comparing its results with the results obtained by using the accurate full-vector plane-wave method.High speed in computation is its great advantage over the other exact methods,because it only needs to find the roots of one-dimensional analytical expressions.And the results of this model,mode plots,offer an ideal environment to explore the basic properties of photonic bandgap clearly.

  20. Electrooptical devices

    Science.gov (United States)

    Hurwitz, C. E.

    1980-03-01

    This report covers work carried out with support of the Department of the Air Force during the period 1 October 1979 through 31 March 1980. A part of this support was provided by the Rome Air Development Center. CW operation at temperatures up to 55 C has been achieved for GaInAsP/InP double-heterostructure (DH) lasers emitting at 1.5 micrometers, which were grown without a GaInAsP buffer layer. These devices are of interest for use as sources in fiber-optics communications systems, since the lowest transmission loss reported for fused-silica optical fibers occurs at 1.55 micrometers. Surface passivation techniques developed for InP and GaInAsP avalanche photodiodes have resulted in reductions of dark current as large as four orders of magnitude, to values as low as .0000016 A/sq cm at 0.9 V(b) where V(b) is the breakdown voltage. Devices consisting entirely of InP have been passivated with plasma-deposited Si3N4, and those with a GaInAsP layer but with the p-n junction in InP have been passivated with polyimide. Neither of these techniques successfully reduces dark currents in devices with the p-n junction in the GaInAsP, but a film of photoresist sprayed with SF6 as the propellant has given excellent results. The electrical characteristics in InP ion implanted with Sn, Ge, Si, and C have been investigated. All of these column IV elements yielded n-type conductivity and Sn, Ge, and Si showed high electrical activation; however, implanted C was found to have a net electrical activation of only about 5 percent.

  1. 一种光纤隔离式直流信号传输装置的设计%A design of high voltage DC signal fiber isolation-transmission device

    Institute of Scientific and Technical Information of China (English)

    苑舜; 刘红江; 蔡志远

    2015-01-01

    In high-voltage fields, high-voltage side inspection equipment (such as CT, PT) or the output signal of the sensor needs to be transmitted to the low-voltage side, the fiber isolation-transmission device not only can complete the transmission of the signal and achieve electrical isolation, but also has a strong ability to re-sist electromagnetic interference. A set of fiber isolation- transmission device for high-voltage DC measure-ment signal is designed by using the voltage frequency conversion (VFC) chip LM331 and photoelectric con-verter HFBR14XX. The circuit also is given. The V-F converter circuit is simulated, and the analysis shows that its error is 0.01 V.%在高电压领域中,高压侧检测设备(如PT,CT)或传感器的输出信号需要传输到低压侧,光纤隔离式信号传输装置不仅能完成信号的传输,还能实现高低压的电气隔离,同时也具有很强的抗电磁干扰能力。利用电压-频率(V-F)转换芯片LM331和HFBR14XX系列光电器件设计出一套适合高电压直流测量信号的光纤隔离传输装置,并给出了具体的电路原理图。对其中的V-F转换电路进行了仿真,分析表明,其误差为0.01 V。

  2. Investigating Bandgap Energies, Materials, and Design of Light-Emitting Diodes

    Science.gov (United States)

    Wagner, Eugene P., II

    2016-01-01

    A student laboratory experiment to investigate the intrinsic and extrinsic bandgaps, dopant materials, and diode design in light-emitting diodes (LEDs) is presented. The LED intrinsic bandgap is determined by passing a small constant current through the diode and recording the junction voltage variation with temperature. A second visible…

  3. Passive and Active Fiber Optic Components

    Science.gov (United States)

    Digonnet, Michel Jean-Francois

    This thesis is concerned with the development and characterization of both passive and active fiber-optic components for applications in single-mode fiber systems, in particular in the new technology of fiber sensors and signal processors. These components include single-mode fiber directional couplers, vital to many optical fiber systems, all-fiber wavelength multiplexers, with potential applications in communication systems and active fiber devices, and single-crystal fiber lasers and amplifiers as miniature light sources and signal regenerators. The fiber directional couplers involved in this work, fabricated by a polishing process, are described in detail. Experimental characterization of their coupling, loss and unique tuning properties, and their respective dependence on the coupler geometrical parameters, are reported. A theoretical model of fiber-to-fiber coupling is also developed and shown to be a very useful and accurate tool in the design and study of this type of fiber couplers. The dependence of the coupling properties of fiber couplers on the signal wavelength is studied both theoretically and experimentally for applications in wavelength division multiplexing. All-fiber multiplexers exhibiting a good wavelength selectivity and unique tunability are described and shown to operate according to the coupler model. Work on active fiber devices explores the potential of the new technology of single-crystal fibers grown by the laser-heated floating-zone technique. The status of crystal fiber growth is reported, together with the basic physical and optical characteristics of these fibers. A theoretical model of the effects of fiber model structure on the gain and laser operation of active fibers is also developed to predict the performance of lasers and amplifiers in a fiber form. Several conceptual pumping schemes are described which offer solutions to the difficult problem of optically pumping small diameter fiber amplifiers. The experimental

  4. All-fiber sensor of angular velocity

    Energy Technology Data Exchange (ETDEWEB)

    Andreev, A.TS.; Vlasenko, O.A.; Dianov, E.M.; Diankov, G.L.; Zafirova, B.S.

    1989-06-01

    The paper reports the construction of an all-fiber optical sensor of angular velocity whose operation is based on the Sagnac effect in a fiber ring interferometer. An all-fiber system does not require the use of external discrete optical elements; division, polarization, and modulation functions are performed by the fiber waveguide itself. The fiber elements and sensor are constructed on the basis of slightly anisotropic fiber waveguides. The sensitivity of the device was 0.0077 deg/sq rt hr, while the zero drift was 0.5 deg/hr. 6 refs.

  5. Development of a Rapid Thermoplastic Impregnation Device

    NARCIS (Netherlands)

    Weustink, A.P.D.

    2007-01-01

    A melt impregnation device for rapid thermoplastic impregnation of fiber bundles has been developed through modeling and experiments. The basic principles behind the thermoplastic impregnation process are investigated and the properties needed for a successful thermoplastic impregnation device are f

  6. Compressed lead-based perovskites reaching optimal Shockley-Queisser bandgap with prolonged carrier lifetime

    CERN Document Server

    Liu, Gang; Gong, Jue; Yang, Wenge; Mao, Ho-kwang; Liu, Zhenxian; Schaller, Richard D; Zhang, Dongzhou; Xu, Tao

    2016-01-01

    Atomic structure of materials plays a decisive role in the light-matter interaction. Yet, despite its unprecedented progress, further efficiency boost of Lead-based organic-inorganic perovskite solar cells is hampered by its greater bandgap than the optimum value according to Shockley-Queisser limit. Here, we report the experimental achievement of bandgap narrowing in formamidinium lead triiodide from 1.489 to 1.337 eV by modulating the lattice constants under hydraulic compression, reaching the optimized bandgap for single-junction solar cells. Strikingly, such bandgap narrowing is accomplished with improved, instead of sacrificed carrier lifetime. More attractively, the narrowed bandgap is partially retainable after the release of pressure. This work opens a new dimension in basic science understanding of structural photonics and paves an alternative pathway towards more efficient photovoltaic materials.

  7. Dynamic control of higher-order modes in hollow-core photonic crystal fibers.

    Science.gov (United States)

    Euser, T G; Whyte, G; Scharrer, M; Chen, J S Y; Abdolvand, A; Nold, J; Kaminski, C F; Russell, P St J

    2008-10-27

    We present a versatile method for selective mode coupling into higher-order modes of photonic crystal fibers, using holograms electronically generated by a spatial light modulator. The method enables non-mechanical and completely repeatable changes in the coupling conditions. We have excited higher order modes up to LP(31) in hollow-core photonic crystal fibers. The reproducibility of the coupling allows direct comparison of the losses of different guided modes in both hollow-core bandgap and kagome-lattice photonic crystal fibers. Our results are also relevant to applications in which the intensity distribution of the light inside the fiber is important, such as particle- or atom-guidance.

  8. Developments of DPF systems with mesh laminated structures. Performances of DPF systems which consist of the metal-mesh laminated filter combustion with the alumina-fiber mesh, and the combustion device of trapped diesel particles; Mesh taso kozo no DPF no kaihatsu. Kinzokusen to arumina sen`i mesh ni yoru fukugo filter to filter heiyo heater ni yoru DPF no seino

    Energy Technology Data Exchange (ETDEWEB)

    Kojima, T.; Tange, A.; Matsuda, K. [NHK Spring Co. Ltd., Yokohama (Japan)

    1997-10-01

    For the purpose of continuous run without any maintenance, new DPF (diesel particulate filter)systems laminated by both metal-wire mesh and alumina-fiber mesh alternately, are under the developments. The perfect combustion of trapped diesel particulate can be achieved by a couple of the resistance heating devices inserted into the filter. 5 refs., 7 figs., 3 tabs.

  9. Frequency conversion through spontaneous degenerate four wave mixing in large mode area hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Olausson, Christina Bjarnal Thulin;

    2014-01-01

    Frequency conversion through spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers. Different FWM processes are observed, phasematching between fiber modes of orthogonal polarization, intermodal phasematching across bandgaps, and intramodal...... phasematching within the same transmission band as the one containing the pump laser. Furthermore first and second order Raman scattering is observed. The interplay between the different FWM processes and Raman scattering are investigated....

  10. Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications

    Science.gov (United States)

    Wellmann, Peter; Syväjärvi, Mikael; Ou, Haiyan

    2014-03-01

    silicon oxycarbide material can provide potential applications of the Eu luminescent materials to challenging conditions like high temperatures or aggressive environments where the silica has weaknesses. In some approaches, silicon rich silicon oxide that contain silicon nanoclusters emit red to near infrared luminescence due to quantum confinement effects while luminescence at shorter wavelength is difficult due to the interplay of defects and quantum confinement effects. In addition it is applicable as low-k dielectric, etch-stop and passivation layers. It also has an optical band-gap that is smaller than that of SiO2 which may facilitate carrier injection at lower voltages that is suitable for optoelectronics. From materials perspective of emerging materials, it seems distant to consider system related issues. The future demands on communication and lighting devices require higher information flows in modernized optical devices, for example by replacing electrical interconnects with their optical counterparts and tunable backgrounds filters for integrated optics or photonics applications. However, there are materials issues related to such device performance, for example by a non-linearity, that provide the possibility for selective removal or addition of wavelengths using hetero structures in which one side of the structure enhances the light-to-dark sensitivity of long and medium wavelength channels and diminish others, and an opposite behavior in other face of the structure. Certainly materials may be applied in various innovative ways to provide new performances in devices and systems. In any materials and device evaluation, reliability issues in passivation and packaging of semiconductor device structures provide a base knowledge that may be used to evaluate new concepts. Fundamental aspects of dielectric constant, bandgap and band offsets between the valence and conduction band edges between the passivation layer and the semiconductor create a foundation for

  11. One-dimensional photonic bandgap structure in abalone shell

    Institute of Scientific and Technical Information of China (English)

    LI Bo; ZHOU Ji; LI Longtu; LI Qi; HAN Shuo; HAO Zhibiao

    2005-01-01

    @@ Photonic bandgap (PBG) materials are periodic com- posites of dielectric materials in which electromagnetic waves of certain frequency range cannot propagate in any or a special direction. Recently, there has been great inter- est in synthetic PBG materials due to their ability in ma- nipulation of photons. Since 500 million years ago, the natural world has been exploiting photonic structures for specific biological purposes[1]. Different types of biologi- cal PBG materials have been discovered in recent years, such as the one-dimension PBG structure in the sea mouse Aphrodita[2], and the fruits Elaeocarpus[3,4]; two-dimension PBG structure in the male peacock Pavo muticus feathers[5], Indonesian male Papilio palinurus butterfly[6], Thaumantis diores butterfly[7] and the male Ancyluris meliboeus Fabricius butterflies[8]; and three-dimension PBG structure in the weevil Pachyrhynchus argus[9].

  12. MUTUAL COUPLING REDUCTION BETWEEN MICROSTRIP ANTENNAS USING ELECTROMAGNETIC BANDGAP STRUCTURE

    Directory of Open Access Journals (Sweden)

    G.N. Gaikwad

    2011-03-01

    Full Text Available When the number of antenna elements is placed in forming the arrays, mutual coupling between the antenna elements is a critical issue. This is particularly concern in phase array antennas. Mutual coupling is a potential source of performance degradation in the form of deviation of the radiation pattern from the desired one, gain reduction due to excitation of surface wave, increased side lobe levels etc. EBG (Electromagnetic Band Gap structure (also called as Photonic Bandgap Structure PBG not only enhances the performance of the patch antennas but also provides greater amount of isolation when placed between the microstrip arrays. This greatly reduces the mutual coupling between the antenna elements. The radiation efficiency, gain, antenna efficiency, VSWR, frequency, directivity etc greatly improves over the conventional patch antennas using EBG. The EBG structure and normal patch antenna is simulated using IE3D antenna simulation software.

  13. Cavity quantum electrodynamics with three-dimensional photonic bandgap crystals

    CERN Document Server

    Vos, W L

    2015-01-01

    This paper gives an overview of recent work on three-dimensional (3D) photonic crystals with a "full and complete" 3D photonic band gap. We review five main aspects: 1) spontaneous emission inhibition, 2) spatial localization of light within a tiny nanoscale volume (aka "a nanobox for light"), 3) the introduction of a gain medium leading to thresholdless lasers, 4) breaking of the weak-coupling approximation of cavity QED, both in the frequency and in the time-domain, 5) decoherence, in particular the shielding of vacuum fluctuations by a 3D photonic bandgap. In addition, we list and evaluate all known photonic crystal structures with a demonstrated 3D band gap.

  14. Low voltage bandgap reference with closed loop curvature compensation

    Institute of Scientific and Technical Information of China (English)

    Fan Tao; Du Bo; Zhang Zheng; Yuan Guoshun

    2009-01-01

    A new low-voltage CMOS bandgap reference (BGR) that achieves high temperature stability is proposed. It feeds back the output voltage to the curvature compensation circuit that constitutes a closed loop circuit to cancel the logarithmic term of voltage VBE. Meanwhile a low voltage amplifier with the 0.5μm low threshold technology is designed for the BGR. A high temperature stability BGR circuit is fabricated in the CSMC 0.5μm CMOS tech-nology. The measured result shows that the BGR can operate down to 1 V, while the temperature coefficient and line regulation are only 9 ppm/℃ and 1.2 mV/V, respectively.

  15. Microfiber-based few-layer black phosphorus saturable absorber for ultra-fast fiber laser

    CERN Document Server

    Luo, Zhi-Chao; Guo, Zhi-Nan; Jiang, Xiao-Fang; Luo, Ai-Ping; Zhao, Chu-Jun; Yu, Xue-Feng; Xu, Wen-Cheng; Zhang, Han

    2015-01-01

    Few-layer black phosphorus (BP), as the most alluring graphene analogue owing to its similar structure as graphene and thickness dependent direct band-gap, has now triggered a new wave of research on two-dimensional (2D) materials based photonics and optoelectronics. However, a major obstacle of practical applications for few-layer BPs comes from their instabilities of laser-induced optical damage. Herein, we demonstrate that, few-layer BPs, fabricated through the liquid exfoliation approach, can be developed as a new and practical saturable absorber (SA) by depositing few-layer BPs with microfiber. The saturable absorption property of few-layer BPs had been verified through an open-aperture z-scan measurement at the telecommunication band and the microfiber-based BP device had been found to show a saturable average power of ~4.5 mW and a modulation depth of 10.9%, which is further confirmed through a balanced twin detection measurement. By further integrating this optical SA device into an erbium-doped fiber...

  16. Synthesis and device applications of graphitic nanomaterials

    Science.gov (United States)

    Umair, Ahmad

    This thesis is focused on two topics: (i) synthesis and characterization of bilayer graphene and pyrolytic carbon by atmospheric pressure chemical vapor deposition, and (ii) application of graphene in the fabrication of a buckyball memory device. Monolayer and bilayer graphene are semi-metal with zero bandgap. One can induce a bandgap in bilayer graphene by applying a gate voltage in the stacking direction. Thus, bandgap and Fermi level in bilayer graphene can be controlled simultaneously with a double-gate device, making it a useful material for future semiconducting applications. Controlled synthesis of bilayer graphene would be the first step to fabricate bilayer graphene based devices. In this context, we report a uniform and low-defect synthesis of bilayer graphene on evaporated nickel films. Ultra-fast cooling is employed to control the number of layers and sample uniformity. The process is self-limiting, which leads to bilayer graphene synthesis over a wide range of growth-time and precursor flow-rate. Pryolytic carbon is another important carbon nanomaterial, due to its diverse applications in electronic and biomedicalengineering. We employ chemical vapor deposition with ultra-fast cooling technique to synthesize pyrolytic carbon. Furthermore, we elucidate a method to calculate the in-plane crystal size by using Raman spectroscopy. Finally, the use of bilayer graphene in a write-once read-many memory device has been demonstrated. The device showed irreversible switching from low-resistance to high-resistance state, with hysteresis in the transport characteristics. The control sample showed random switching and hysteresis due to electromigration of metal atoms into the active material of the device. We attribute the reliability and performance of the reported device to the ultra-smooth graphene contacts, which additionally inhibits electromigration from the underlying metallic film. Moreover, the memory device showed excellent endurance and retention

  17. Optical fiber telecommunications IIIb

    CERN Document Server

    Koch, Thomas L

    2012-01-01

    Updated to include the latest information on light wave technology, Optical Fiber Telecommunication III, Volumes A & B are invaluable for scientists, students, and engineers in the modern telecommunications industry. This two-volume set includes the most current research available in optical fiber telecommunications, light wave technology, and photonics/optoelectronics. The authors cover important background concepts such as SONET, coding device technology, andWOM components as well as projecting the trends in telecommunications for the 21st century.Key Features* One of the hottest subjects of

  18. Characterization of bandgap reference circuits designed for high energy physics applications

    Science.gov (United States)

    Traversi, G.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Mattiazzo, S.; Ratti, L.; Re, V.; Riceputi, E.

    2016-07-01

    The objective of this work is to design a high performance bandgap voltage reference circuit in a standard commercial 65 nm CMOS technology capable of operating in harsh radiation environments. A prototype circuit based on three different devices (diode, bipolar transistor and MOSFET) was fabricated and tested. Measurement results show a temperature variation as low as ±3.4 mV over a temperature range of 170 ° C (-30 °C to 140 °C) and a line regulation at room temperature of 5.2%/V. Measured VREF is 690 mV±15 mV (3σ) for 26 samples on the same wafer. Circuits correctly operate with supply voltages in the range from 1.32 V down to 0.78 V. A reference voltage shift of only 7.6 mV (around 1.1%) was measured after irradiation with 10 keV X-rays up to an integrated dose of 225 Mrad (SiO2).

  19. Ultralow frequency acoustic bandgap and vibration energy recovery in tetragonal folding beam phononic crystal

    Science.gov (United States)

    Gao, Nansha; Wu, Jiu Hui; Yu, Lie; Hou, Hong

    2016-06-01

    This paper investigates ultralow frequency acoustic properties and energy recovery of tetragonal folding beam phononic crystal (TFBPC) and its complementary structure. The dispersion curve relationships, transmission spectra and displacement fields of the eigenmodes are studied with FEA in detail. Compared with the traditional three layer phononic crystal (PC) structure, this structure proposed in this paper not only unfold bandgaps (BGs) in lower frequency range (below 300 Hz), but also has lighter weight because of beam structural cracks. We analyze the relevant physical mechanism behind this phenomenon, and discuss the effects of the tetragonal folding beam geometric parameters on band structure maps. FEM proves that the multi-cell structures with different arrangements have different acoustic BGs when compared with single cell structure. Harmonic frequency response and piezoelectric properties of TFBPC are specifically analyzed. The results confirm that this structure does have the recovery ability for low frequency vibration energy in environment. These conclusions in this paper could be indispensable to PC practical applications such as BG tuning and could be applied in portable devices, wireless sensor, micro-electro mechanical systems which can recycle energy from vibration environment as its own energy supply.

  20. Spectral filtering using active metasurfaces compatible with narrow bandgap III-V infrared detectors.

    Science.gov (United States)

    Wolf, Omri; Campione, Salvatore; Kim, Jin; Brener, Igal

    2016-09-19

    Narrow-bandgap semiconductors such as alloys of InAsAlSb and their heterostructures are considered promising candidates for next generation infrared photodetectors and devices. The prospect of actively tuning the spectral responsivity of these detectors at the pixel level is very appealing. In principle, this could be achieved with a tunable metasurface fabricated monolithically on the detector pixel. Here, we present first steps towards that goal using a complementary metasurface strongly coupled to an epsilon-near-zero (ENZ) mode operating in the long-wave region of the infrared spectrum. We fabricate such a coupled system using the same epitaxial layers used for infrared pixels in a focal plane array and demonstrate the existence of ENZ modes in high mobility layers of InAsSb. We confirm that the coupling strength between the ENZ mode and the metasurface depends on the ENZ layer thickness and demonstrate a transmission modulation on the order of 25%. We further show numerically the expected tunable spectral behavior of such coupled system under reverse and forward bias, which could be used in future electrically tunable detectors. PMID:27661890

  1. Bandgap engineering of different stacking WS2 bilayer under an external electric field

    Science.gov (United States)

    Li, Wei; Wang, Tianxing; Dai, Xianqi; Wang, Xiaolong; Zhai, Caiyun; Ma, Yaqiang; Chang, Shanshan

    2016-01-01

    Effective modulation of physical properties via external control is a tantalizing possibility that would bring two-dimensional material-based electronics a step closer. By means of density functional theory calculations, we systematically examined the effect of external electric field on the bandgap of different stacking WS2 bilayer. It shows that for all cases, the most stable stacking order is the AB conformation, followed by the AA‧ stacking fault, which is by only 2.06 meV/supercell less stable than AB. The band gaps of both AB and AA‧ configurations decrease monotonically with an increasing vertical external electric field strength except for external electric field along -z direction in the AB conformation. Applying external electric field along +z direction and -z directions has different effects on the band gap of AB conformation, while it has the same effect on the AA‧ configuration. The different effects are caused by the spontaneous electrical polarization existing between the two monolayers of AB conformation. This may provide a new perspective on the formation of WS2-based electronic and optoelectronic devices.

  2. A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells.

    Science.gov (United States)

    Guo, Fei; Li, Ning; Fecher, Frank W; Gasparini, Nicola; Ramirez Quiroz, Cesar Omar; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V; Radmilović, Velimir R; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

    2015-01-01

    The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

  3. Near-elliptic core triangular-lattice and square-lattice PCFs: a comparison of birefringence, cut-off and GVD characteristics towards fiber device application

    CERN Document Server

    Maji, Partha Sona

    2014-01-01

    In this work, detailed numerical analysis of the near-elliptic core index-guiding triangular-lattice and square-lattice photonic crystal fiber (PCFs) are reported for birefringence, single mode, cut-off behavior, group velocity dispersion and effective area properties. For the same relative values of d/P, triangular-lattice PCFs show higher birefringence whereas the square-lattice PCFs show a wider range of single-mode operation. Square-lattice PCF was found to be endlessly single-mode for higher air-filling fraction (d/P). Smaller lengths of triangular-lattice PCF are required for dispersion compensation whereas PCFs with square-lattice with nearer relative dispersion slope (RDS) can better compensate the broadband dispersion. Square-lattice PCFs show ZDW red-shifted, making it preferable for mid-IR supercontinuum generation (SCG) with highly non-linear chalcogenide material. Square-lattice PCFs show higher dispersion slope that leads to compression of the broadband, thus accumulating more power in the pulse...

  4. Thermal Emission Control via Bandgap Engineering in Aperiodically Designed Nanophotonic Devices

    OpenAIRE

    Enrique Maciá

    2015-01-01

    Aperiodic photonic crystals can open up novel routes for more efficient photon management due to increased degrees of freedom in their design along with the unique properties brought about by the long-range aperiodic order as compared to their periodic counterparts. In this work we first describe the fundamental notions underlying the idea of thermal emission/absorption control on the basis of the systematic use of aperiodic multilayer designs in photonic quasicrystals. Then, we illustrate th...

  5. Electrochromic devices based on wide band-gap nanocrystalline semiconductors functionalized with mononuclear charge transfer compounds

    DEFF Research Database (Denmark)

    Biancardo, M.; Argazzi, R.; Bignozzi, C.A.

    2006-01-01

    A series of ruthenium and iron mononuclear complexes were prepared and their spectroeletrochemical behavior characterized oil Optically Transparent Thin Layer Electrodes (OTTLE) and on Fluorine Doped SnO2 (FTO) conductive glasses coated with Sb-doped nanocrystalline SnO2. These systems display a ...

  6. Robustness of One-Dimensional Photonic Bandgaps Under Random Variations of Geometrical Parameters

    CERN Document Server

    Sozuer, H S

    2005-01-01

    The supercell method is used to study the variation of the photonic bandgaps in one-dimensional photonic crystals under random perturbations to thicknesses of the layers. The results of both plane wave and analytical band structure and density of states calculations are presented along with the transmission cofficient as the level of randomness and the supercell size is increased. It is found that higher bandgaps disappear first as the randomness is gradually increased. The lowest bandgap is found to persist up to a randomness level of 55 percent.

  7. Synthesis and Characterization of Small Band-gap Conjugated Polymers - Poly(pyrrolyl methines)

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A kind of small band-gap conjugated polymers-poly (pyrrolyl methines) and their precursors-(poly pyrrolyl methanes) have been synthesized by a simple method and characterized by 1HNMR, FT-IR, TGA and UV-Vis. These polymers can be dissolved in high polar solvents such as DMSO, DMF or NMP. The results reveals that the band-gap of the synthesized conjugated polymers are in the range of 0.96~1.14 eV and they all belong to the small band-gap polymers. The conductivity of doped products with iodine is in the range of semiconductor.

  8. Bandgap Engineering of Double Perovskites for One- and Two-photon Water Splitting

    DEFF Research Database (Denmark)

    Castelli, Ivano Eligio; Thygesen, Kristian Sommer; Jacobsen, Karsten Wedel

    2013-01-01

    Computational screening is becoming increasingly useful in the search for new materials. We are interested in the design of new semiconductors to be used for light harvesting in a photoelectrochemical cell. In the present paper, we study the double perovskite structures obtained by combining 46...... stable cubic perovskites which was found to have a finite bandgap in a previous screening-study. The four-metal double perovskite space is too large to be investigated completely. For this reason we propose a method for combining different metals to obtain a desired bandgap. We derive some bandgap design...

  9. Wide-Band Spatially Tunable Photonic Bandgap in Visible Spectral Range and Laser based on a Polymer Stabilized Blue Phase

    Science.gov (United States)

    Lin, Jia-De; Wang, Tsai-Yen; Mo, Ting-Shan; Huang, Shuan-Yu; Lee, Chia-Rong

    2016-07-01

    This work successfully develops a largely-gradient-pitched polymer-stabilized blue phase (PSBP) photonic bandgap (PBG) device with a wide-band spatial tunability in nearly entire visible region within a wide blue phase (BP) temperature range including room temperature. The device is fabricated based on the reverse diffusion of two injected BP-monomer mixtures with a low and a high chiral concentrations and afterwards through UV-curing. This gradient-pitched PSBP can show a rainbow-like reflection appearance in which the peak wavelength of the PBG can be spatially tuned from the blue to the red regions at room temperature. The total tuning spectral range for the cell is as broad as 165 nm and covers almost the entire visible region. Based on the gradient-pitched PSBP, a spatially tunable laser is also demonstrated in this work. The temperature sensitivity of the lasing wavelength for the laser is negatively linear and approximately ‑0.26 nm/°C. The two devices have a great potential for use in applications of photonic devices and displays because of their multiple advantages, such as wide-band tunability, wide operated temperature range, high stability and reliability, no issue of hysteresis, no need of external controlling sources, and not slow tuning speed (mechanically).

  10. Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects

    Science.gov (United States)

    Kaleem, Mohammad; Nazir, Sajid; Saqib, Nazar Abbas

    2016-03-01

    Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (λ= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.

  11. Sub-bandgap linear-absorption-based photodetectors in avalanche mode in PN-diode-integrated silicon microring resonators.

    Science.gov (United States)

    Li, Yu; Feng, Shaoqi; Zhang, Yu; Poon, Andrew W

    2013-12-01

    We report a sub-bandgap linear-absorption-based photodetector in avalanche mode at 1550 nm in a PN-diode-integrated silicon microring resonator. The photocurrent is primarily generated by the defect-state absorption introduced by the boron and phosphorous ion implantation during the PN diode formation. The responsivity is enhanced by both the cavity effect and the avalanche multiplication. We measure a responsivity of ~72.8 mA/W upon 8 V at cavity resonances in avalanche mode, corresponding to a gain of ~72 relative to the responsivity of ~1.0 mA/W upon 3 V at cavity resonances in normal mode. Our device exhibits a 3 dB bandwidth of ~7 GHz and an open eye diagram at 15 Gbit/s upon 8 V.

  12. Bandgap widening in highly conducting CdO thin film by Ti incorporation through radio frequency magnetron sputtering technique

    Science.gov (United States)

    Saha, B.; Thapa, R.; Chattopadhyay, K. K.

    2008-01-01

    Transparent and highly conducting thin films of cadmium oxide (CdO) with titanium doping were synthesized by using radio frequency magnetron sputtering technique. The thin films were deposited on glass and silicon substrates with different percentages of titanium at a fixed substrate temperature 473 K and a fixed pressure of 0.1 mbar in Ar atmosphere. The deposited films were characterized by studying their crystallographic structure, optical and electrical properties. X-ray diffractometer, atomic force microscope, UV-Vis-NIR spectrophotometer, and X-ray photoelectron spectrophotometer were used for different characterizations. All the films have a rock-salt structure. A systematic increase in the optical bandgap was found for the CdO thin films with Ti doping, so that it can be considered as a candidate material for different optoelectronic device applications. Electrical conductivity was also found to increase with Ti doping concentration.

  13. Picosecond pump-probe measurement of bandgap changes in SiO2/TiO2 one-dimensional photonic bandgap structures

    Science.gov (United States)

    Hwang, Jisoo; Kim, Min Jung; Wu, J. W.; Mook Lee, Seung; Rhee, Bum Ku

    2006-02-01

    A picosecond pump-probe nonlinear optical measurement is performed in SiO2/TiO2 one-dimensional photonic bandgap structures fabricated by a solgel method. Both high and low band edges were examined by varying the probe wavelengths and angle tuning was also employed to further clarify the mechanism of a nonlinear optical response. The third-order nonlinear optical response in one-dimensional photonic bandgap structures that comprise TiO2 films is responsible for the nonlinear optical transmissions at both bandgap edges, with an 8% decrease at the low-energy edge and a 4.5% increase at the high-energy edge for a 355 nm pump intensity of 430 MW/cm2.

  14. Optical fiber communications

    CERN Document Server

    Keiser, Gerd

    2008-01-01

    The fourth edition of this popular text and reference book presents the fundamental principles for understanding and applying optical fiber technology to sophisticated modern telecommunication systems. Optical-fiber-based telecommunication networks have become a major information-transmission-system, with high capacity links encircling the globe in both terrestrial and undersea installations. Numerous passive and active optical devices within these links perform complex transmission and networking functions in the optical domain, such as signal amplification, restoration, routing, and switching. Along with the need to understand the functions of these devices comes the necessity to measure both component and network performance, and to model and stimulate the complex behavior of reliable high-capacity networks.

  15. Novel molecular host materials based on carbazole/PO hybrids with wide bandgap via unique linkages for solution-processed blue phosphorescent OLEDs

    Science.gov (United States)

    Ye, Hua; Zhou, Kaifeng; Wu, Hongyu; Chen, Kai; Xie, Gaozhan; Hu, Jingang; Yan, Guobing; Ma, Songhua; Su, Shi-Jian; Cao, Yong

    2016-10-01

    A series of novel molecules with wide bandgap based on electron-withdrawing diphenyl phosphine oxide units and electron-donating carbazolyl moieties through insulated unique linkages of flexible chains terminated by oxygen or sulfur atoms as solution-processable host materials were successfully synthesized for the first time, and their thermal, photophysical, and electrochemical properties were studied thoroughly. These materials possess high triplet energy levels (ET, 2.76-2.77 eV) due to the introduction of alkyl chain to interrupt the conjugation between electron-donor and electron-acceptor. Such high ET could effectively curb the energy from phosphorescent emitter transfer to the host molecules and thus assuring the emission of devices was all from the blue phosphorescent emitter iridium (III) bis [(4,6-difluorophenyl)-pyridinate-N,C2‧]picolinate (FIrpic). Among them, the solution-processed device based on CBCR6OPO without extra vacuum thermal-deposited hole-blocking layer and electron-transporting layer showed the highest maximum current efficiency (CEmax) of 4.16 cd/A. Moreover, the device presented small efficiency roll-off with current efficiency (CE) of 4.05 cd/A at high brightness up to 100 cd/m2. Our work suggests the potential applications of the solution-processable materials with wide bandgap in full-color flat-panel displays and organic lighting.

  16. Nanoscale wicking methods and devices

    Science.gov (United States)

    Zhou, Jijie (Inventor); Bronikowski, Michael (Inventor); Noca, Flavio (Inventor); Sansom, Elijah B. (Inventor)

    2011-01-01

    A fluid transport method and fluid transport device are disclosed. Nanoscale fibers disposed in a patterned configuration allow transport of a fluid in absence of an external power source. The device may include two or more fluid transport components having different fluid transport efficiencies. The components may be separated by additional fluid transport components, to control fluid flow.

  17. Vibration band-gap properties of three-dimensional Kagome lattices using the spectral element method

    Science.gov (United States)

    Wu, Zhi-Jing; Li, Feng-Ming; Zhang, Chuanzeng

    2015-04-01

    The spectral element method (SEM) is extended to investigate the vibration band-gap properties of three-dimensional (3D) Kagome lattices. The dynamic stiffness matrix of the 3D element which contains bending, tensional and torsional components is derived. The spectral equations of motion of the whole 3D Kagome lattice are then established. Comparing with frequency-domain solutions calculated by the finite element method (FEM), the accuracy and the feasibility of the SEM solutions are verified. It can be shown that the SEM is suitable for analyzing the vibration band-gap properties. Due to the band-gap characteristics, the periodic 3D Kagome lattice has the performance of vibration isolation. The influences of the structural and material parameters on the vibration band-gaps are discussed and a new type of 3D Kagome lattice is designed to obtain the improved vibration isolation capability.

  18. MoS2/MX2 heterobilayers: bandgap engineering via tensile strain or external electrical field

    Science.gov (United States)

    Lu, Ning; Guo, Hongyan; Li, Lei; Dai, Jun; Wang, Lu; Mei, Wai-Ning; Wu, Xiaojun; Zeng, Xiao Cheng

    2014-02-01

    We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX2/MoS2 (M = Mo, Cr, W, Fe, V; X = S, Se). For M = Mo, Cr, W; X = S, Se, all heterobilayers show semiconducting characteristics with an indirect bandgap with the exception of the WSe2/MoS2 heterobilayer which retains the direct-bandgap character of the constituent monolayer. For M = Fe, V; X = S, Se, the MX2/MoS2 heterobilayers exhibit metallic characters. Particular attention of this study has been focused on engineering the bandgap of the TMD heterobilayer materials via application of either a tensile strain or an external electric field. We find that with increasing either the biaxial or uniaxial tensile strain, the MX2/MoS2 (M = Mo, Cr, W; X = S, Se) heterobilayers can undergo a semiconductor-to-metal transition. For the WSe2/MoS2 heterobilayer, a direct-to-indirect bandgap transition may occur beyond a critical biaxial or uniaxial strain. For M (=Fe, V) and X (=S, Se), the magnetic moments of both metal and chalcogen atoms are enhanced when the MX2/MoS2 heterobilayers are under a biaxial tensile strain. Moreover, the bandgap of MX2/MoS2 (M = Mo, Cr, W; X = S, Se) heterobilayers can be reduced by the vertical electric field. For two heterobilayers MSe2/MoS2 (M = Mo, Cr), PBE calculations suggest that the indirect-to-direct bandgap transition may occur under an external electric field. The transition is attributed to the enhanced spontaneous polarization. The tunable bandgaps in general and possible indirect-direct bandgap transitions due to tensile strain or external electric field make the TMD heterobilayer materials a viable candidate for optoelectronic applications.We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX2/MoS2 (M = Mo, Cr, W, Fe, V; X = S, Se). For

  19. Graphene nano-devices and nano-composites for structural, thermal and sensing applications

    Science.gov (United States)

    Yavari, Fazel

    In this dissertation we have developed graphene-based nano-devices for applications in integrated circuits and gas sensors; as well as graphene-based nano-composites for applications in structures and thermal management. First, we have studied the bandgap of graphene for semiconductor applications. Graphene as a zero-bandgap material cannot be used in the semiconductor industry unless an effective method is developed to open the bandgap in this material. We have demonstrated that a bandgap of 0.206 eV can be opened in graphene by adsorption of water vapor molecules on its surface. Water molecules break the molecular symmetries of graphene resulting in a significant bandgap opening. We also illustrate that the lack of bandgap in graphene can be used to our advantage by making sensors that are able to detect low concentrations of gas molecules mixed in air. We have shown that 1-2 layers of graphene synthesized by chemical vapor deposition enables detection of trace amounts of NO 2 and NH3 in air at room temperature and atmospheric pressure. The gas species are detected by monitoring changes in electrical resistance of the graphene film due to gas adsorption. The sensor response time is inversely proportional to the gas concentration. Heating the film expels chemisorbed molecules from the graphene surface enabling reversible operation. The detection limits of ~100 parts-per-billion (ppb) for NO2 and ~500 ppb for NH3 obtained using this device are markedly superior to commercially available NO2 and NH3 detectors. This sensor is fabricated using individual graphene sheets that are exquisitely sensitive to the chemical environment. However, the fabrication and operation of devices that use individual nanostructures for sensing is complex, expensive and suffers from poor reliability due to contamination and large variability from sample-to-sample. To overcome these problems we have developed a gas sensor based on a porous 3D network of graphene sheets called graphene foam

  20. Devices, systems, and methods for harvesting energy and methods for forming such devices

    Science.gov (United States)

    Kotter, Dale K.; Novack, Steven D.

    2012-12-25

    Energy harvesting devices include a substrate coupled with a photovoltaic material and a plurality of resonance elements associated with the substrate. The resonance elements are configured to collect energy in at least visible and infrared light spectra. Each resonance element is capacitively coupled with the photovoltaic material, and may be configured to resonate at a bandgap energy of the photovoltaic material. Systems include a photovoltaic material coupled with a feedpoint of a resonance element. Methods for harvesting energy include exposing a resonance element having a resonant electromagnetic radiation having a frequency between approximately 20 THz and approximately 1,000 THz, absorbing at least a portion of the electromagnetic radiation with the resonance element, and resonating the resonance element at a bandgap energy of an underlying photovoltaic material. Methods for forming an energy harvesting device include forming resonance elements on a substrate and capacitively coupling the resonance elements with a photovoltaic material.

  1. Degenerate four wave mixing in large mode area hybrid photonic crystal fibers.

    Science.gov (United States)

    Petersen, Sidsel R; Alkeskjold, Thomas T; Lægsgaard, Jesper

    2013-07-29

    Spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers, in which photonic bandgap guidance and index guidance is combined. Calculations show the parametric gain is maximum on the edge of a photonic bandgap, for a large range of pump wavelengths. The FWM products are observed on the edges of a transmission band experimentally, in good agreement with the numerical results. Thereby the bandedges can be used to control the spectral positions of FWM products through a proper fiber design. The parametric gain control combined with a large mode area fiber design potentially allows for power scaling of light at wavelengths not easily accessible with e.g. rare earth ions. PMID:23938682

  2. Degenerate four wave mixing in large mode area hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Lægsgaard, Jesper

    2013-01-01

    Spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers, in which photonic bandgap guidance and index guidance is combined. Calculations show the parametric gain is maximum on the edge of a photonic bandgap, for a large range of pump...... wavelengths. The FWM products are observed on the edges of a transmission band experimentally, in good agreement with the numerical results. Thereby the bandedges can be used to control the spectral positions of FWM products through a proper fiber design. The parametric gain control combined with a large mode...... area fiber design potentially allows for power scaling of light at wavelengths not easily accessible with e.g. rare earth ions....

  3. Bandgap Energy of Wurtzite InAs Nanowires.

    Science.gov (United States)

    Rota, Michele B; Ameruddin, Amira S; Fonseka, H Aruni; Gao, Qiang; Mura, Francesco; Polimeni, Antonio; Miriametro, Antonio; Tan, H Hoe; Jagadish, Chennupati; Capizzi, Mario

    2016-08-10

    InAs nanowires (NWs) have been grown on semi-insulating InAs (111)B substrates by metal-organic chemical vapor deposition catalyzed by 50, 100, and 150 nm-sized Au particles. The pure wurtzite (WZ) phase of these NWs has been attested by high-resolution transmission electron microscopy and selected area diffraction pattern measurements. Low temperature photoluminescence measurements have provided unambiguous and robust evidence of a well resolved, isolated peak at 0.477 eV, namely 59 meV higher than the band gap of ZB InAs. The WZ nature of this energy band has been demonstrated by high values of the polarization degree, measured in ensembles of NWs both as-grown and mechanically transferred onto Si and GaAs substrates, in agreement with the polarization selection rules for WZ crystals. The value of 0.477 eV found here for the bandgap energy of WZ InAs agrees well with theoretical calculations. PMID:27467011

  4. Negative voltage bandgap reference with multilevel curvature compensation technique

    Science.gov (United States)

    Xi, Liu; Qian, Liu; Xiaoshi, Jin; Yongrui, Zhao; Lee, Jong-Ho

    2016-05-01

    A novel high-order curvature compensation negative voltage bandgap reference (NBGR) based on a novel multilevel compensation technique is introduced. Employing an exponential curvature compensation (ECC) term with many high order terms in itself, in a lower temperature range (TR) and a multilevel curvature compensation (MLCC) term in a higher TR, a flattened and better effect of curvature compensation over the TR of 165 °C (‑40 to 125 °C) is realised. The MLCC circuit adds two convex curves by using two sub-threshold operated NMOS. The proposed NBGR implemented in the Central Semiconductor Manufacturing Corporation (CSMC) 0.5 μm BCD technology demonstrates an accurate voltage of ‑1.183 V with a temperature coefficient (TC) as low as 2.45 ppm/°C over the TR of 165 °C at a ‑5.0 V power supply; the line regulation is 3 mV/V from a ‑5 to ‑2 V supply voltage. The active area of the presented NBGR is 370 × 180 μm2. Project supported by the Fund of Liaoning Province Education Department (No. L2013045).

  5. Optoelectronic Characterization of Narrow Bandgap Nanostructures through Scanning Photocurrent Microscopy

    Science.gov (United States)

    Miller, Christopher Vincent

    Scanning Photocurrent Microscopy is a powerful technique that studies the carrier transport and dynamics in nanostructures. It is capable of measuring diffusion lengths, drift lengths, electric field distributions, and metal-semiconductor barrier heights. In this dissertation, the carrier dynamics of Lead Sulfide nanowires, Vanadium Dioxide nanobeams, and Lead Selenide quantum dot thin films are investigated through Scanning Photocurrent Microscopy. For the Lead Sulfide nanowires, the minority carrier diffusion length was determined to be around 1 micron. This photocurrent decay length is highly dependant on the applied internal field, indicating a drift dominant carrier transport at high bias. This is explained through an intuitive charge transport simulation that accurately predicts this field dependent photocurrent decay length. For the Vanadium Dioxide nanobeams, a Schottky barrier height of ˜0.3 eV is extracted between the metal and insulator phases of VO2, providing direct evidence of the nearly symmetric bandgap opening upon the phase transition. There was also an unusually long photocurrent decay length in the insulating phase, indicating an unexpectedly long minority carrier lifetimes on the order of microseconds. For the Lead Selenide quantum dot thin films, Scanning Photocurrent Microscopy reveals a long photocurrent decay length of 1.7 microns at moderate positive gate bias. The diffusion of long-lifetime carriers accounts for this long photocurrent decay length via a Shockley-Read-Hall recombination mechanism through charge traps. In addition, the application of gold nanoparticles, acting as a plasmonic resonator, greatly enhances the photocurrent at the contacts.

  6. Angle-dependent bandgap engineering in gated graphene superlattices

    Science.gov (United States)

    García-Cervantes, H.; Gaggero-Sager, L. M.; Sotolongo-Costa, O.; Naumis, G. G.; Rodríguez-Vargas, I.

    2016-03-01

    Graphene Superlattices (GSs) have attracted a lot of attention due to its peculiar properties as well as its possible technological implications. Among these characteristics we can mention: the extra Dirac points in the dispersion relation and the highly anisotropic propagation of the charge carriers. However, despite the intense research that is carried out in GSs, so far there is no report about the angular dependence of the Transmission Gap (TG) in GSs. Here, we report the dependence of TG as a function of the angle of the incident Dirac electrons in a rather simple Electrostatic GS (EGS). Our results show that the angular dependence of the TG is intricate, since for moderated angles the dependence is parabolic, while for large angles an exponential dependence is registered. We also find that the TG can be modulated from meV to eV, by changing the structural parameters of the GS. These characteristics open the possibility for an angle-dependent bandgap engineering in graphene.

  7. Semi-transparent polymer solar cells with excellent sub-bandgap transmission for third generation photovoltaics

    KAUST Repository

    Beiley, Zach M.

    2013-10-07

    Semi-transparent organic photovoltaics are of interest for a variety of photovoltaic applications, including solar windows and hybrid tandem photovoltaics. The figure shows a photograph of our semi-transparent solar cell, which has a power conversion efficiency of 5.0%, with an above bandgap transmission of 34% and a sub-bandgap transmission of 81%. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Variable band-gap semiconductors as the basis of new solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Acevedo, Arturo [Centro de Investigacion y de Estudios Avanzados del IPN, Electrical Engineering Department, Avenida IPN No. 2508, 07360 Mexico, DF (Mexico)

    2009-09-15

    Some basic concepts related to variable band-gap absorbing semiconductors in solar cell structures, such as the associated quasi-electric field, will be discussed. The effects of this quasi-electric field upon the minority carrier drift-diffusion length and the back surface recombination velocity may induce a larger generated carrier collection at the junction with the corresponding increase of the illumination current density. It will also be shown that an additional improvement of the open-circuit voltage is possible when the band-gap is reduced within the space charge region so that the dark saturation current density is reduced there. Our estimation is that in the case of a solar cell where the band-gap is changed about 0.5 eV within the space charge region, an increase of the open-circuit voltage around 115 mV will be observed with respect to the single minimum band-gap absorbing material case. A similar band-gap variation in the bulk of the material will cause an increase of the minority carrier drift-diffusion length by a factor of 10 with respect to the single band-gap material. Therefore, based on these physical concepts, two possible structures with variable band-gap layers are proposed in order to have higher efficiencies than for cells without any band-gap grading. It will be shown that these concepts can be applied to II-VI, III-V chalcopyrite and even amorphous semiconductor solar cells. (author)

  9. Properties of photonic bandgap in one-dimensional multicomponent photonic crystal

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yi; WANG Qi

    2006-01-01

    Properties of photonic band gap and light propagation in one-dimensional multicomponent photonic crystal have been studied with the optical transfer matrix method.We mainly analyze the relation of photonic band-gap property with the arrangement of components,the refractive index and the geometrical thickness.In this study,the methods to change the width and the location of the existing photonic band-gaps in multicomponent photonic crystal are proposed.

  10. Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors

    OpenAIRE

    Pearton, Stephen J.; Fan Ren

    2013-01-01

    Wide bandgap semiconductor ZnO, GaN and InN nanowires have displayed the ability to detect many types of gases and biological and chemical species of interest. In this review, we give some recent examples of using these nanowires for applications in pH sensing, glucose detection and hydrogen detection at ppm levels. The wide bandgap materials offer advantages in terms of sensing because of their tolerance to high temperatures, environmental stability and the fact that ...

  11. Photonic bandgap structures for guiding of long-range surface plasmon polaritons

    DEFF Research Database (Denmark)

    Leosson, K.; Nikolajsen, T.; Boltasseva, Alexandra;

    2003-01-01

    We present the first observations of long-range plasmon polariton guiding in photonic bandgap structures. The transmission of waveguide structures is characterized at telecommunication wavelengths and a propagation loss below 4 dB/mm is determined.......We present the first observations of long-range plasmon polariton guiding in photonic bandgap structures. The transmission of waveguide structures is characterized at telecommunication wavelengths and a propagation loss below 4 dB/mm is determined....

  12. Wide Band-Gap 3,4-Difluorothiophene-Based Polymer with 7% Solar Cell Efficiency: an Alternative to P3HT

    KAUST Repository

    Wolf, Jannic

    2015-05-27

    We report on a wide band-gap polymer donor composed of benzo[1,2-b:4,5-b\\']dithiophene (BDT) and 3,4-difluorothiophene ([2F]T) units (Eopt ~2.1 eV), and show that the fluorinated analog PBDT[2F]T performs significantly better than its non-fluorinated counterpart PBDT[2H]T in BHJ solar cells with PC71BM. While control P3HT- and PBDT[2H]T-based devices yield PCEs of ca. 4% and 3% (Max.) respectively, PBDT[2F]T-based devices reach PCEs of ca. 7%, combining a large Voc of ca. 0.9 V and short-circuit current values (ca. 10.7 mA/cm2) comparable to those of the best P3HT-based control devices.

  13. Continuous fiber thermoplastic prepreg

    Science.gov (United States)

    Wilson, Maywood L. (Inventor); Johnson, Gary S. (Inventor)

    1993-01-01

    A pultrusion machine employing a corrugated impregnator vessel to immerse multiple, continuous strand, fiber tow in an impregnating material, and an adjustable metered exit orifice for the impregnator vessel to control the quantity of impregnating material retained by the impregnated fibers, is provided. An adjustable height insert retains transverse rod elements within each depression of the corrugated vessel to maintain the individual fiber tows spread and in contact with the vessel bottom. A series of elongated heating dies, transversely disposed on the pultrusion machine and having flat heating surfaces with radiused edges, ensure adequate temperature exposed dwell time and exert adequate pressure on the impregnated fiber tows, to provide the desired thickness and fiber/resin ratio in the prepreg formed. The prepreg passing through the pulling mechanism is wound on a suitable take-up spool for subsequent use. A formula is derived for determining the cross sectional area opening of the metering device. A modification in the heating die system employs a heated nip roller in lieu of one of the pressure applying flat dies.

  14. 基于PLC的光纤喷胶装置空气压力控制系统设计∗%Air Pressure Control System Design about Optical Fiber Glue Spray Device Based on PLC

    Institute of Scientific and Technical Information of China (English)

    马保吉; 刘坤

    2016-01-01

    Stable air pressure is one of the effective ways to improve the accuracy of winding optical fiber glue spray device, and achieving air pressure stability under different conditions. Using the advantages of Siemens S7-200PLC PID control mod-ule of PI regulator can realize air pressure control system fast response speed, simple operation and good spraying effect. It plays an important role in the effective solution of the problems such as the vibration of the liquid atomization and the uneven particles.%提高制导光纤线包喷胶精度的有效办法之一就是稳定空气压力供给,实现不同工况下空气压力稳定。使用西门子S7-200PLC中PID控制模块的PI调节具有空气压力控制系统响应速度快,操作简便,喷胶效果良好等优点,对有效解决胶液雾化抖动、雾化颗粒不均匀等问题有重要作用。

  15. Large enhancement of the photovoltaic effect in ferroelectric complex oxides through bandgap reduction

    Science.gov (United States)

    An, Hyunji; Han, Jun Young; Kim, Bongjae; Song, Jaesun; Jeong, Sang Yun; Franchini, Cesare; Bark, Chung Wung; Lee, Sanghan

    2016-01-01

    Tuning the bandgap in ferroelectric complex oxides is a possible route for improving the photovoltaic activity of materials. Here, we report the realization of this effect in epitaxial thin films of the ferroelectric complex oxide Bi3.25La0.75Ti3O12 (BLT) suitably doped by Fe and Co. Our study shows that Co (BLCT) doping and combined Fe, Co (BLFCT) doping lead to a reduction of the bandgap by more than 1 eV compared to undoped BLT, accompanied by a surprisingly more efficient visible light absorption. Both BLCT and BLFCT films can absorb visible light with a wavelength of up to 500 nm while still exhibiting ferroelectricity, whereas undoped BLT only absorbs UV light with a wavelength of less than 350 nm. Correlated with its bandgap reduction, the BLFCT film shows a photocurrent density enhanced by 25 times compared to that of BLT films. Density functional theory calculations indicate that the bandgap contraction is caused by the formation of new energy states below the conduction bands due to intermixed transition metal dopants (Fe, Co) in BLT. This mechanism of tuning the bandgap by simple doping can be applied to other wide-bandgap complex oxides, thereby enabling their use in solar energy conversion or optoelectronic applications. PMID:27313099

  16. Direct writing of fiber optic components in photonic crystal fibers and other specialty fibers

    Science.gov (United States)

    Fernandes, Luis Andre; Sezerman, Omur; Best, Garland; Ng, Mi Li; Kane, Saidou

    2016-04-01

    Femtosecond direct laser writing has recently shown great potential for the fabrication of complex integrated devices in the cladding of optical fibers. Such devices have the advantage of requiring no bulk optical components and no breaks in the fiber path, thus reducing the need for complicated alignment, eliminating contamination, and increasing stability. This technology has already found applications using combinations of Bragg gratings, interferometers, and couplers for the fabrication of optical filters, sensors, and power monitors. The femtosecond laser writing method produces a local modification of refractive index through non-linear absorption of the ultrafast laser pulses inside the dielectric material of both the core and cladding of the fiber. However, fiber geometries that incorporate air or hollow structures, such as photonic crystal fibers (PCFs), still present a challenge since the index modification regions created by the writing process cannot be generated in the hollow regions of the fiber. In this work, the femtosecond laser method is used together with a pre-modification method that consists of partially collapsing the hollow holes using an electrical arc discharge. The partial collapse of the photonic band gap structure provides a path for femtosecond laser written waveguides to couple light from the core to the edge of the fiber for in-line power monitoring. This novel approach is expected to have applications in other specialty fibers such as suspended core fibers and can open the way for the integration of complex devices and facilitate miniaturization of optical circuits to take advantage of the particular characteristics of the PCFs.

  17. Ultra-large bandwidth hollow-core guiding in all-silica bragg fibers with nano-supports

    DEFF Research Database (Denmark)

    Vienne, Guillaume; Xu, Yong; Jakobsen, Christian;

    2004-01-01

    We demonstrate a new class of hollow-core Bragg fibers that are composed of concentric cylindrical silica rings separated by nanoscale support bridges. We theoretically predict and experimentally observe hollow-core confinement over an octave frequency range. The bandwidth of bandgap guiding in...

  18. High-power picosecond pulse delivery through hollow core photonic band gap fibers

    DEFF Research Database (Denmark)

    Michieletto, Mattia; Johansen, Mette Marie; Lyngsø, Jens Kristian;

    2016-01-01

    setup. It provided 22ps pulses with a maximum average power of 95W, 40MHz repetition rate at 1032nm (~2.4μJ pulse energy), with M2 <1.3. We determined the facet damage threshold for a 7-cells hollow core photonic bandgap fiber and showed up to 59W average power output for a 5 meters fiber. The damage......We demonstrated robust and bend insensitive fiber delivery of high power laser with diffraction limited beam quality for two different kinds of hollow core band gap fibers. The light source for this experiment consists of ytterbium-doped double clad fiber aeroGAIN-ROD-PM85 in a high power amplifier...... threshold for a 19-cell hollow core photonic bandgap fiber exceeded the maximum power provided by the light source and up to 76W average output power was demonstrated for a 1m fiber. In both cases, no special attention was needed to mitigate bend sensitivity. The fibers were coiled on 8 centimeters radius...

  19. Effects of corrugation shape on frequency band-gaps for longitudinal wave motion in a periodic elastic layer.

    Science.gov (United States)

    Sorokin, Vladislav S

    2016-04-01

    The paper concerns determining frequency band-gaps for longitudinal wave motion in a periodic waveguide. The waveguide may be considered either as an elastic layer with variable thickness or as a rod with variable cross section. As a result, widths and locations of all frequency band-gaps are determined by means of the method of varying amplitudes. For the general symmetric corrugation shape, the width of each odd band-gap is controlled only by one harmonic in the corrugation series with its number being equal to the number of the band-gap. Widths of even band-gaps, however, are influenced by all the harmonics involved in the corrugation series, so that the lower frequency band-gaps can emerge. These are band-gaps located below the frequency corresponding to the lowest harmonic in the corrugation series. For the general non-symmetric corrugation shape, the mth band-gap is controlled only by one, the mth, harmonic in the corrugation series. The revealed insights into the mechanism of band-gap formation can be used to predict locations and widths of all frequency band-gaps featured by any corrugation shape. These insights are general and can be valid also for other types of wave motion in periodic structures, e.g., transverse or torsional vibration. PMID:27106336

  20. Study on the preparation of optical fiber-film type CWDM device%光纤-薄膜型粗波分复用器件制备技术研究

    Institute of Scientific and Technical Information of China (English)

    徐进; 陈抱雪; 周建忠

    2013-01-01

    Experiment is carried out for the research of the preparation technology of a Curing sealing CWDM device with low-cost polymer binder,and glue-free light path.The device is widely used in CWDM system.In order to meet its technical parameters of wavelength division,and based on the high precision structure adjustment of automatic adjustment core instrument,and the high stability and low cost of the EMI3410 curing glue,the process involved in the on-line monitoring of the light path adjustment method,the component fixed method,moisture isolation methods is discussed.Using the technology of symmetric filling quartz fiber,the impact characteristic of the device in high and low temperature is effectively improved.The all-glass all-glue process is employed in the experiments to prepare the sample,and its optical properties conform to the industry index,and have passed the reliability test.%实验研究了一种低成本的聚合物粘结剂固化封口的、光路不合胶的粗波分复用(CWDM)器件的制备技术,器件大量用于CWDM系统中,为了满足其对波分的各种技术指标要求,基于自动调芯仪的高精度结构微调,以及EMI3410固化胶的高热稳定性和低成本,讨论了工艺过程中涉及的在线监测的光路调节方法、元器件固定方法、湿气隔离手段等.采用了独到的对称填充石英纤维的技术,有效改善了器件的抗高低温冲击特性.实验中采用全玻璃全胶工艺所制备样品,其光学特性数据达到行业指标,并通过了可靠性试验.

  1. Pressure-induced phase transition and bandgap collapse in the wide-bandgap semiconductor InTaO4

    CERN Document Server

    Errandonea, D; Garg, A B; Botella, P; Martinez-Garcia, D; Pellicer-Porres, J; Rodriguez-Hernandez, P; Munoz, A; Cuenca-Gotor, V; Sans, J A

    2016-01-01

    A pressure-induced phase transition, associated with an increase of the coordination number of In and Ta, is detected beyond 13 GPa in InTaO4 by combining synchrotron x-ray diffraction and Raman measurements in a diamond anvil cell with ab-initio calculations. High-pressure optical-absorption measurements were also carried out. The high-pressure phase has a monoclinic structure which shares the same space group with the low-pressure phase (P2/c). The structure of the high-pressure phase can be considered as a slight distortion of an orthorhombic structure described by space group Pcna. The phase transition occurs together with a unit-cell volume collapse and an electronic bandgap collapse observed by experiments and calculations. Additionally, a band crossing is found to occur in the low-pressure phase near 7 GPa. The pressure dependence of all the Raman-active modes is reported for both phases as well as the pressure dependence of unit-cell parameters and the equations of state. Calculations also provide inf...

  2. Interference of selective higher-order modes in optical fibers

    Institute of Scientific and Technical Information of China (English)

    Li Enbang; Peng Gangding

    2007-01-01

    The interference of selective higher-order modes in optical fibers is investigated both theoretically and experimentally.It has been demonstrated that by coupling the LP01 mode in a step-index single-mode fiber(SMF)to the LPom modes in step-index muhimode fibers(MMFs)with different parameters,one can selectively generate higher-order modes and construct all-fiber interferometers.The research presented in this paper forms a basis of a new type of fiber devices with potential applications in fiber sensing,optical fiber communications,and optical signal processing.

  3. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    Science.gov (United States)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, Sarah; Moriarty, T.; Romero, M. J.

    2007-01-01

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of approx.1 eV. For the last several years, research has been conducted by a number of organizations to develop approx.1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) approx.1- eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1- eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm2) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include

  4. Polarization splitter based on dual core liquid crystal-filled holey fiber

    Science.gov (United States)

    Wang, Er-Lei; Jiang, Hai-Ming; Xie, Kang; Chen, Chun; Hu, Zhi-Jia

    2016-09-01

    Through filling the liquid crystal into the air holes of a dual-core holey fiber with a simple structure, the transmission mechanism of the fiber is changed from total internal reflection to photonic bandgap (PBG), and a polarization splitter based on the liquid crystal-filled dual-core PBG holey fiber is investigated. The results demonstrate that, by setting appropriate geometrical parameters, the polarization splitter possesses a short length of 890.5 μm, and its wide bandwidth of ˜150 nm almost covers all the S, C, and L communication bands. Besides, it has an excellent electro-interference-resistance property and certain sensitivity to temperature.

  5. Novel spatial solitons in light-induced photonic bandgap structures

    Institute of Scientific and Technical Information of China (English)

    Ci-bo LOU; Li-qin TANG; Dao-hong SONG; Xiao-sheng WANG; Jing-jun XU; Zhi-gang CHEN

    2008-01-01

    The study of wave propagation in periodic sys-tems is at the frontiers of physics, from fluids to condensed matter physics, and from photonic crystals to Bose-Einstein condensates. In optics, a typical example of periodic system is a closely-spaced waveguide array, in which collective behavior of wave propagation exhibits many intriguing phenomena that have no counterpart in homogeneous media. Even in a linear waveguide array, the diffraction property of a light beam changes due to evanescent coupling between nearby waveguide sites, leading to normal and anomalous discrete diffraction. In a nonlinear waveguide array, a bal-ance between diffraction and self-action gives rise to novel localized states such as spatial "discrete solitons" in the semi-infinite (or total-internal-reflection) gap or spatial "gap solitons" in the Bragg reflection gaps, Recently, in a series of experiments, we have "fabricated" closely-spaced waveguide arrays (photonic lattices) by optical induction. Such photonic structures have attracted great interest due to their novel physics, link to photonic crystals, as well as po-tential applications in optical switching and navigation. In this review article, we present a brief overview on our ex-perimental demonstrations of a number of novel spatial soliton phenomena in light-induced photonic bandgap structures, including self-trapping of fundamental discrete solitons and more sophisticated lattice gap solitons. Much of our work has direct impact on the study of similar discrete phenomena in systems beyond optics, including sound waves, water waves, and matter waves (Bose-Einstein con-densates) propagating in periodic potentials.

  6. Experimental studies of radiation resistance of boron nitride, C2C ceramics Al2O3 and carbon-fiber composites using a PF-1000 plasma-focus device

    Science.gov (United States)

    Gribkov, V. A.; Tuniz, C.; Demina, E. V.; Dubrovsky, A. V.; Pimenov, V. N.; Maslyaev, S. V.; Gaffka, R.; Gryaznevich, M.; Skladnik-Sadowska, E.; Sadowski, M. J.; Miklaszewski, R.; Paduch, M.; Scholz, M.

    2011-04-01

    This paper reports on experiments undertaken to compare the radiation resistance of two types of ceramics, boron nitride (BN) and pure alumina (Al2O3), which are used in a TAEA antenna coil installed in the MAST spherical tokamak. Samples of the investigated materials (bulk BN and a 20 μm film of Al2O3 on Al substrate) were exposed on the axis of the plasma-focus PF-1000 device, which can emit intense streams of hot plasma (v≈107 cm s-1 and Npl≈1018 cm-3) and fast deuteron beams (Ei≈100 keV). The most powerful plasma-ion pulse lasted 0.2-1.0 μs and its intensity decayed in about 100 μs. The irradiation process was diagnosed using fast optical cameras, laser interferometry and optical spectrometry. Experiments were performed at power flux densities equal to 109-1010 W cm-2 or 108-109 W cm-2 during the most powerful stage of the interaction process. The irradiated specimens were investigated by means of optical microscopy and x-ray structure analysis (XRSA). It was shown that at 1010 W cm-2 pulses the Al2O3 coating was completely evaporated, whereas a surface of the BN sample became smoother than in the virgin one. A direct comparison of both samples after the action of 108 W cm-2 pulses demonstrated a wave-like structure (more distinct on Al2O3). Weighing of these samples showed, however, that the evaporation of BN was about two times stronger than that of Al2O3 in spite of the lower irradiation flux; the XRSA showed no evidence of cracking of Al2O3 after these pulses. The insulation properties of Al2O3 did not decline, and the Al2O3 coating may be potentially more beneficial, provided that it is kept below its melting point. Characteristic features of damages of a material based on the carbon-fiber composite with additions of silicium carbide (SiC; 8-40% volumetric) were also investigated. It was found that at q=109 W cm-2, the surface erosion is associated with sputtering and evaporation. The degree of this erosion depends on the fibers' orientation in

  7. Quantum-engineered interband cascade photovoltaic devices

    Science.gov (United States)

    Yang, Rui Q.; Lotfi, Hossein; Li, Lu; Hinkey, Robert T.; Ye, Hao; Klem, John F.; Lei, L.; Mishima, T. D.; Keay, J. C.; Santos, M. B.; Johnson, M. B.

    2013-12-01

    Quantum-engineered multiple stage photovoltaic (PV) devices are explored based on InAs/GaSb/AlSb interband cascade (IC) structures. These ICPV devices employ multiple discrete absorbers that are connected in series by widebandgap unipolar barriers using type-II heterostructure interfaces for facilitating carrier transport between cascade stages similar to IC lasers. The discrete architecture is beneficial for improving the collection efficiency and for spectral splitting by utilizing absorbers with different bandgaps. As such, the photo-voltages from each individual cascade stage in an ICPV device add together, creating a high overall open-circuit voltage, similar to conventional multi-junction tandem solar cells. Furthermore, photo-generated carriers can be collected with nearly 100% efficiency in each stage. This is because the carriers travel over only a single cascade stage, designed to be shorter than a typical diffusion length. The approach is of significant importance for operation at high temperatures where the diffusion length is reduced. Here, we will present our recent progress in the study of ICPV devices, which includes the demonstration of ICPV devices at room temperature and above with narrow bandgaps (e.g. 0.23 eV) and high open-circuit voltages.

  8. Preparation and characterization of activated carbon fiber (ACF) from cotton woven waste

    Science.gov (United States)

    Zheng, Jieying; Zhao, Quanlin; Ye, Zhengfang

    2014-04-01

    In this study, the activated carbon fibers (ACFs) were prepared using cotton woven waste as precursor. The cotton woven waste was first partly dissolved by 80% phosphoric acid and then was pre-soaked in 7.5% diammonium hydrogen phosphate solution. Finally, carbonization and activation were proceeded to get ACF. The optimum preparation conditions, including carbonization temperature, carbonization time, activation temperature and activation time, were chosen by orthogonal design. Nitrogen adsorption/desorption test was conducted to characterize the prepared ACF's pore structure. Fourier transform infrared spectroscopy (FTIR) analysis, X-ray photoelectron spectroscopy (XPS) and environmental scanning electron microscope (ESEM) were employed to characterize its chemical properties and morphology. Adsorption of oilfield wastewater was used to evaluate its adsorption properties. The results show that the prepared ACF is in the form of fiber, with the sectional diameters of 11.7 × 2.6 μm and the surface area of 789 m2/g. XPS results show that carbon concentration of the prepared ACF is higher than that of the commercial ACF. When the prepared ACF dosage is 6 g/L, over 80% of COD and over 70% of chrominance can be removed after 24 h of adsorption at 18 °C. We demonstrated the catalytic growth of m-axial InxGa1-xN (0.10 ≤ x ≤ 0.17) nanocolumn arrays with high crystallinity on silicon substrates using metal-organic chemical vapor deposition with trimethylindium (TMIn), triethylgallium (TEGa), and ammonia as precursors. The high quality of InGaN nanocolumns (NCs) were believed to be due to the utilization of TEGa that achieved less carbon impurities and offered more comparable vapor pressure with that of TMIn at low temperature. In addition, these NCs were grown in non-polar m-axis, which the internal electric field of the InGaN that often deteriorates the device performances might be able to be eliminated. Furthermore, the bandgap of this InGaN can be modulated from

  9. The Development of Advanced Optical Fibers for Long-Wave Infrared Transmission

    Directory of Open Access Journals (Sweden)

    Pierre Lucas

    2013-12-01

    Full Text Available Long-wave infrared fibers are used in an increasing number of applications ranging from thermal imaging to bio-sensing. However, the design of optical fiber with low-loss in the far-infrared requires a combination of properties including good rheological characteristics for fiber drawing and low phonon energy for wide optical transparency, which are often mutually exclusive and can only be achieved through fine materials engineering. This paper presents strategies for obtaining low loss fibers in the far-infrared based on telluride glasses. The composition of the glasses is systematically investigated to obtained fibers with minimal losses. The fiber attenuation is shown to depend strongly on extrinsic impurity but also on intrinsic charge carrier populations in these low band-gap amorphous semiconductor materials.

  10. Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications

    International Nuclear Information System (INIS)

    silicon oxycarbide material can provide potential applications of the Eu luminescent materials to challenging conditions like high temperatures or aggressive environments where the silica has weaknesses. In some approaches, silicon rich silicon oxide that contain silicon nanoclusters emit red to near infrared luminescence due to quantum confinement effects while luminescence at shorter wavelength is difficult due to the interplay of defects and quantum confinement effects. In addition it is applicable as low-k dielectric, etch-stop and passivation layers. It also has an optical band-gap that is smaller than that of SiO2 which may facilitate carrier injection at lower voltages that is suitable for optoelectronics. From materials perspective of emerging materials, it seems distant to consider system related issues. The future demands on communication and lighting devices require higher information flows in modernized optical devices, for example by replacing electrical interconnects with their optical counterparts and tunable backgrounds filters for integrated optics or photonics applications. However, there are materials issues related to such device performance, for example by a non-linearity, that provide the possibility for selective removal or addition of wavelengths using hetero structures in which one side of the structure enhances the light-to-dark sensitivity of long and medium wavelength channels and diminish others, and an opposite behavior in other face of the structure. Certainly materials may be applied in various innovative ways to provide new performances in devices and systems. In any materials and device evaluation, reliability issues in passivation and packaging of semiconductor device structures provide a base knowledge that may be used to evaluate new concepts. Fundamental aspects of dielectric constant, bandgap and band offsets between the valence and conduction band edges between the passivation layer and the semiconductor create a foundation for

  11. Fabrication of fiber-embedded multi-core photonic crystal fibers

    Institute of Scientific and Technical Information of China (English)

    Weimin Sun; Xiaoqi Liu; Fenghua Fu; Jianzhong Zhang

    2008-01-01

    @@ A novel fabrication method of multi-core photonic crystal fibers is proposed on the basis of a fiberembedded technique. A taper tower is used to modify the structures of the fiber preform, and four steps of fiber fabrication and different structures of fiber samples are given. The mode structures and beating characteristics of a photonic crystal fiber sample with two successive cores are investigated in detail with the help of a supercontinuum light source, a charge-coupled device (CCD) camera, and an optical spectrum analyzer. The test results show a clear beating phenomenon between two orthotropic polarization modes with a 2.8-nm peak interval in wavelength.

  12. Optical bistability in tunable fiber laser using fiber Mach-Zehnder interferometer

    Institute of Scientific and Technical Information of China (English)

    Guohui Lü; Hongan Ye; Junqing Li; Xiudong Sun; Xinming Zhang; Cheng Li

    2005-01-01

    @@ In this letter, a novel mechanism of hybrid optical bistability is proposed by using nonlinear mechanism in the frequency domain. This device is based on electro-optical feedback through the fiber Bragg grating on piezoelectric transducer (PZT) to tune continuous wave (CW) fiber laser. The optical bistable characteristics for two manners of separately alternating input power and bias voltage are discussed. The smallest wavelength shift of the order of 0.001 nm needed to realize a switching process in this optical bistability device is estimated. The potential applications of this device in the optical fiber sensor technique are also discussed.

  13. Analysis of band gap of non-bravais lattice photonic crystal fiber

    Institute of Scientific and Technical Information of China (English)

    Yichao MA; Heming CHEN

    2009-01-01

    This article designs a novel type ofnon-bravais lattice photonic crystal fiber. To form the nesting complexperiod with positive and negative refractive index materials respectively, a cylinder with the same radius and negative refractive index is introduced into the center of each lattice unit cell in the traditional square lattice air-holes photonic crystal fiber. The photonic band-gap of the photonic crystal fiber is calculated numerically by the plane wave expansion method. The result shows that compared with the traditional square photonic band-gap fiber (PBGF),when R/A is 0.35, the refractive index of the substrate, airhole, and medium-column are 1.30, 1.0, and -1.0,respectively. This new PBGF can transmit signal by the photonic band-gap effect. When the lattice constant Λvaries from 1.5 μm to 3.0 μm, the range of the wavelength ranges from 880 nm to 2300 nm.

  14. Dirac cone move and bandgap on/off switching of graphene superlattice.

    Science.gov (United States)

    Jia, Tian-Tian; Zheng, Meng-Meng; Fan, Xin-Yu; Su, Yan; Li, Shu-Juan; Liu, Hai-Ying; Chen, Gang; Kawazoe, Yoshiyuki

    2016-01-01

    Using the density functional theory with generalized gradient approximation, we have studied in detail the cooperative effects of degenerate perturbation and uniaxial strain on bandgap opening in graphene. The uniaxial strain could split π bands into πa and πz bands with an energy interval Es to move the Dirac cone. The inversion symmetry preserved antidot would then further split the πa (πz) bands into πa1 (πz1) and πa2 (πz2) bands with an energy interval Ed, which accounts for the bandgap opening in a kind of superlattices with Dirac cone being folded to Γ point. However, such antidot would not affect the semimetal nature of the other superlattices, showing a novel mechanism for bandstructure engineering as compared to the sublattice-equivalence breaking. For a superlattice with bandgap of ~Ed opened at Γ point, the Es could be increased by strengthening strain to close the bandgap, suggesting a reversible switch between the high velocity properties of massless Fermions attributed to the linear dispersion relation around Dirac cone and the high on/off ratio properties associated with the sizable bandgap. Moreover, the gap width actually could be continuously tuned by controlling the strain, showing attractive application potentials. PMID:26732904

  15. Dirac cone move and bandgap on/off switching of graphene superlattice

    Science.gov (United States)

    Jia, Tian-Tian; Zheng, Meng-Meng; Fan, Xin-Yu; Su, Yan; Li, Shu-Juan; Liu, Hai-Ying; Chen, Gang; Kawazoe, Yoshiyuki

    2016-01-01

    Using the density functional theory with generalized gradient approximation, we have studied in detail the cooperative effects of degenerate perturbation and uniaxial strain on bandgap opening in graphene. The uniaxial strain could split π bands into πa and πz bands with an energy interval Es to move the Dirac cone. The inversion symmetry preserved antidot would then further split the πa (πz) bands into πa1 (πz1) and πa2 (πz2) bands with an energy interval Ed, which accounts for the bandgap opening in a kind of superlattices with Dirac cone being folded to Γ point. However, such antidot would not affect the semimetal nature of the other superlattices, showing a novel mechanism for bandstructure engineering as compared to the sublattice-equivalence breaking. For a superlattice with bandgap of ~Ed opened at Γ point, the Es could be increased by strengthening strain to close the bandgap, suggesting a reversible switch between the high velocity properties of massless Fermions attributed to the linear dispersion relation around Dirac cone and the high on/off ratio properties associated with the sizable bandgap. Moreover, the gap width actually could be continuously tuned by controlling the strain, showing attractive application potentials.

  16. Wide band-gap materials for high power electronics

    International Nuclear Information System (INIS)

    The wide gap semiconductors are the basis for the third generation of microelectronics and specially for the high end of the temperature range. In this presentation we will review the prospects and status of two members of this group: Diamond and Silicon Carbide (SiC). The two are at different stages of technological development and their respective modes of application at present are quite different. SiC devices can operate at up to 105 deg C. High power and high frequency devices have been demonstrated. Diamond is not yet ready for real electronic devices but its many extreme properties find their applications in several cases. The prospects of the future applications will be described in view of the semiconducting characteristics of these materials

  17. Dietary fiber.

    Science.gov (United States)

    Madar, Z; Thorne, R

    1987-01-01

    Studies done on dietary fiber (DF) over the past five years are presented in this Review. The involvement of dietary fiber in the control of plasma glucose and lipid levels is now established. Two dietary fiber sources (soybean and fenugreek) were studied in our laboratory and are discussed herein. These sources were found to be potentially beneficial in the reduction of plasma glucose in non-insulin dependent diabetes mellitus subjects. They are shown to be acceptable by human subjects and are easy to use either in a mixture of milk products and in cooking. The mechanism by which dietary fiber alters the nutrient absorption is also discussed. The effect of DF on gastric emptying, transit time, adsorption and glucose transport may contribute to reducing plasma glucose and lipid levels. DF was found to be effective in controlling blood glucose and lipid levels of pregnant diabetic women. Dietary fiber may also be potentially beneficial in the reduction of exogenous insulin requirements in these subjects. However, increased consumption of DF may cause adverse side effects; the binding capabilities of fiber may affect nutrient availability, particularly that of minerals and prolonged and high DF dosage supplementation must be regarded cautiously. This is particularly true when recommending such a diet for pregnant or lactating women, children or subjects with nutritional disorders. Physiological effects of DF appear to depend heavily on the source and composition of fiber. Using a combination of DF from a variety of sources may reduce the actual mass of fiber required to obtain the desired metabolic effects and will result in a more palatable diet. Previously observed problems, such as excess flatus, diarrhea and mineral malabsorption would also be minimized.

  18. A hot-electron thermophotonic solar cell demonstrated by thermal up-conversion of sub-bandgap photons

    Science.gov (United States)

    Farrell, Daniel J.; Sodabanlu, Hassanet; Wang, Yunpeng; Sugiyama, Masakazu; Okada, Yoshitaka

    2015-01-01

    The direct conversion of solar energy to electricity can be broadly separated into two main categories: photovoltaics and thermal photovoltaics, where the former utilizes gradients in electrical potential and the latter thermal gradients. Conventional thermal photovoltaics has a high theoretical efficiency limit (84%) but in practice cannot be easily miniaturized and is limited by the engineering challenges of sustaining large (>1,000 K) temperature gradients. Here we show a hot-carrier-based thermophotonic solar cell, which combines the compact nature of photovoltaic devices with the potential to reach the high-efficiency regime of thermal photovoltaics. In the device, a thermal gradient of 500 K is established by hot electrons, under Stokes illumination, rather than by raising the temperature of the material itself. Under anti-Stokes (sub-bandgap) illumination we observe a thermal gradient of ∼20 K, which is maintained by steady-state Auger heating of carriers and corresponds to a internal thermal up-conversion efficiency of 30% between the collector and solar cell. PMID:26541415

  19. Relationship between dopant energy levels and device performances of triplet mixed host devices

    International Nuclear Information System (INIS)

    Device performances of phosphorescent organic light-emitting diodes (PHOLEDs) with triplet mixed host structure were correlated with dopant energy levels and mixed host composition. A mixed host of 4,4',4''-tris-(N-carbazolyl)triphenylamine (TCTA) and spirobifluorene type host (PH1) was used and three different dopants with different bandgap were doped in the mixed host. Optimum quantum efficiency was obtained in TCTA:PH1 (50:50) mixed host device in the case of green dopants, while the optimum host composition for red and orange dopants was TCTA:PH1 (25:75)

  20. Energy bandgap variation in oblique angle-deposited indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyurin; Kim, Hyunsoo; Cho, Jaehee, E-mail: jcho@chonbuk.ac.kr [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Park, Jun Hyuk; Kim, Jong Kyu [Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 54896 (Korea, Republic of); Fred Schubert, E. [Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2016-01-25

    Indium tin oxide (ITO) thin films deposited using the oblique angle deposition (OAD) technique exhibit a strong correlation between structural and optical properties, especially the optical bandgap energy. The microstructural properties of ITO thin films are strongly influenced by the tilt angle used during the OAD process. When changing the tilt angle, the refractive index, porosity, and optical bandgap energy of ITO films also change due to the existence of a preferential growth direction at the interface between ITO and the substrate. Experiments reveal that the ITO film's optical bandgap varies from 3.98 eV (at normal incident deposition) to 3.87 eV (at a 60° tilt angle)

  1. Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof

    Science.gov (United States)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2012-01-01

    "Super-hetero-epitaxial" combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a "Tri-Unity" system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF.sub.3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

  2. A Unified Understanding of the Thickness-Dependent Bandgap Transition in Hexagonal Two-Dimensional Semiconductors.

    Science.gov (United States)

    Kang, Joongoo; Zhang, Lijun; Wei, Su-Huai

    2016-02-18

    Many important layered semiconductors, such as hexagonal boron nitride (hBN) and transition-metal dichalcogenides (TMDs), are derived from a hexagonal lattice. A single layer of such hexagonal semiconductors generally has a direct bandgap at the high-symmetry point K, whereas it becomes an indirect, optically inactive semiconductor as the number of layers increases to two or more. Here, taking hBN and MoS2 as examples, we reveal the microscopic origin of the direct-to-indirect bandgap transition of hexagonal layered materials. Our symmetry analysis and first-principles calculations show that the bandgap transition arises from the lack of the interlayer orbital couplings for the band-edge states at K, which are inherently weak because of the crystal symmetries of hexagonal layered materials. Therefore, it is necessary to judiciously break the underlying crystal symmetries to design more optically active, multilayered semiconductors from hBN or TMDs.

  3. Fiber Optic Temperature Sensor Based on Multimode Interference Effects

    Energy Technology Data Exchange (ETDEWEB)

    Aguilar-Soto, J G; Antonio-Lopez, J E; Sanchez-Mondragon, J J [Photonics and Optical Physics Laboratory, Optics Department, INAOE Apdo. Postal 51 and 216, Tonantzintla, Puebla 72000 (Mexico); May-Arrioja, D A, E-mail: darrioja@uat.edu.mx

    2011-01-01

    A novel fiber optic temperature sensor based on multimode interference was designed, fabricated and tested. The sensor is very simple and inexpensive since we only need to splice a section of multimode fiber between two single mode fibers. Using this device a sensing range of 25 deg. C to 375 deg. C is demonstrated. We should also highlight that due to the pass-band filter response of MMI devices, multiplexing is rather simple by just changing the length of the multimode section.

  4. An efficient method of DFT/LDA band-gap correction

    Science.gov (United States)

    Scharoch, Pawel; Winiarski, Maciej

    2013-12-01

    It has been shown that the underestimated by DFT/LDA(GGA) band-gap can be efficiently corrected by an averaging procedure of transition energies over a region close to the direct band-gap transition, which we call the Δ(EIG) method (the differences in the Kohn-Sham eigenvalues). For small excitations the averaging appears to be equivalent to the Δ(SCF) approach (differences in the self-consistent energies), which is a consequence of Janak’s theorem and has been confirmed numerically. The Gaussian distribution in k-space for electronic excitation has been used (occupation numbers in the Δ(SCF) or eigenenergy sampling in the Δ(EIG)). A systematic behavior of the k-space localization parameter σk correcting the band-gap has been observed in numerical experiments. On that basis some sampling schemes for band-gap correction have been proposed and tested in the prediction of the band-gap behavior in InxGa(1-x)N semiconducting alloy, and a very good agreement with independent calculations has been obtained. In the context of the work the issue of electron localization in the r-space has been discussed which, as it has been predicted by Mori-Sánchez et al. [P. Mori-Sánchez, A.J. Cohen, W. Yang, Phys. Rev. Lett. 100 (2008) 146401], should reduce the effect of the convex behavior of the LDA/GGA functionals and improve the band-gap prediction within DFT/LDA(GGA). A scheme for electron localization in r-space has been suggested.

  5. Research progress of the resonant fiber optic gyroscope technology

    Science.gov (United States)

    Wang, Linglan; Yan, Yuchao; Ma, Huilian; Jin, Zhonghe

    2015-10-01

    The resonant fiber optic gyro (RFOG) is a high accuracy inertial rotation sensor based on the Sagnac effect. The existence of various noises, including the nonreciprocal noises such as the polarization noise and the Kerr noise as well as the reciprocal circuit noise, limits the performance improvement of the RFOG. An improved scheme by inserting two in-line polarizers in the polarization maintaining fiber transmission-type resonator has been proposed to suppress the polarization-fluctuation induced drift. Furthermore, the adoption of the air-core photonic bandgap fibers (PBFs) offers a novel solution to reduce the optical Kerr effect. In addition, A digital signal processor is designed to reduce the reciprocal noises and detect the rotation information. A minimum actual rotation of 0.001°/s is achieved. The dynamic range is improved by a factor of 7 and the scale factor nonlinearity is decreased by a factor of 60.

  6. Hollow-core fiber Fabry-Perot photothermal gas sensor.

    Science.gov (United States)

    Yang, Fan; Tan, Yanzhen; Jin, Wei; Lin, Yuechuan; Qi, Yun; Ho, Hoi Lut

    2016-07-01

    A highly sensitive, compact, and low-cost trace gas sensor based on photothermal effect in a hollow-core fiber Fabry-Perot interferometer (FPI) is described. The Fabry-Perot sensor is fabricated by splicing a piece of hollow-core photonic bandgap fiber (HC-PBF) to single-mode fiber pigtails at both ends. The absorption of a pump beam in the hollow core results in phase modulation of probe beam, which is detected by the FPI. Experiments with a 2 cm long HC-PBF with femtosecond laser drilled side-holes demonstrated a response time of less than 19 s and noise equivalent concentration (NEC) of 440 parts-per-billion (ppb) using a 1 s lock-in time constant, and the NEC goes down to 117 ppb (2.7×10-7 in absorbance) by using 77 s averaging time. PMID:27367092

  7. Quasi-two-dimensional optomechanical crystals with a complete phononic bandgap

    CERN Document Server

    Alegre, Thiago P Mayer; Winger, Martin; Painter, Oskar

    2010-01-01

    A fully planar two-dimensional optomechanical crystal formed in a silicon microchip is used to create a structure devoid of phonons in the GHz frequency range. A nanoscale photonic crystal cavity is placed inside the phononic bandgap crystal in order to probe the properties of the localized acoustic modes. By studying the trends in mechanical damping, mode density, and optomechanical coupling strength of the acoustic resonances over an array of structures with varying geometric properties, clear evidence of a complete phononic bandgap is shown.

  8. Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers

    Institute of Scientific and Technical Information of China (English)

    YAO Fei; XUE Chun-Lai; CHENG Bu-Wen; WANG Qi-Ming

    2007-01-01

    Taking into account the compensation effect of B to Ge in strained SiGe layers for the first time, the effect of heavily doped boron on the bandgap narrowing of strained SiGe layers is calculated, and the classical Jain-Roulston (J-R) model is modified. The results show that our modified J-R model well fits the experimental values. Based on the modified J-R model, the real bandgap narrowing distribution between the conduction and valence bands is further calculated, which has great influence on modelling the electrical characteristics of SiGe heterojunction bipolar transistors.

  9. Bandgap engineering of rippled MoS2 monolayer under external electric field

    Science.gov (United States)

    Qi, Jingshan; Li, Xiao; Qian, Xiaofeng; Feng, Ji

    2013-04-01

    In this letter we propose a universal strategy combining external electric field with the ripple of membrane to tune the bandgap of semiconducting atomic monolayer. By first-principles calculations we show that the bandgap of rippled MoS2 monolayer can be tuned in a large range by vertical external electric field, which is expected to have little effect on MoS2 monolayer. This phenomenon can be explained from charge redistribution under external electric field by a simple model. This may open an avenue of optimizing monolayer MoS2 for electronic and optoelectronic applications by surface patterning.

  10. Linewidth of Cyclotron Absorption in Band-Gap Graphene: Relaxation Time Approximation vs. Monte Carlo Method

    Directory of Open Access Journals (Sweden)

    S.V. Kryuchkov

    2015-03-01

    Full Text Available The power of the elliptically polarized electromagnetic radiation absorbed by band-gap graphene in presence of constant magnetic field is calculated. The linewidth of cyclotron absorption is shown to be non-zero even if the scattering is absent. The calculations are performed analytically with the Boltzmann kinetic equation and confirmed numerically with the Monte Carlo method. The dependence of the linewidth of the cyclotron absorption on temperature applicable for a band-gap graphene in the absence of collisions is determined analytically.

  11. CARBONIZED STARCH MICROCELLULAR FOAM-CELLULOSE FIBER COMPOSITE STRUCTURES

    OpenAIRE

    Andrew R. Rutledge; Richard A. Venditti; Joel J. Pawlak; Sameer Patel; Janderson L. Cibils

    2008-01-01

    The production of microporous carbon foams from renewable starch microcellular foam-fiber (SMCF-Fiber) composites is described. Carbon foams are used in applications such as thermal insulation, battery electrodes, filters, fuel cells, and medical devices. SMCF-Fiber compos-ites were created from an aquagel. The water in the aquagel was exchanged with ethanol and then dried and carbonized. Higher amylose content starches and fiber contents of up to 4% improved the processability of the foam. ...

  12. Transverse Anderson Localization in Disordered Glass Optical Fibers: A Review

    OpenAIRE

    Arash Mafi; Salman Karbasi; Koch, Karl W.; Thomas Hawkins; John Ballato

    2014-01-01

    Disordered optical fibers show novel waveguiding properties that can be used for various device applications, such as beam-multiplexed optical communications and endoscopic image transport. The strong transverse scattering from the transversely disordered optical fibers results in transversely confined beams that can freely propagate in the longitudinal direction, similar to conventional optical fibers, with the advantage that any point in the cross section of the fiber can be used for beam t...

  13. Design and fabrication of customized fiber gratings to improve the interrogation of optical fiber sensors

    OpenAIRE

    Ricchiuti, Amelia Lavinia

    2016-01-01

    [EN] Fiber grating sensors and devices have demonstrated outstanding capabilities in both telecommunications and sensing areas, due to their well-known advantageous characteristics. Therefore, one of the most important motivations lies in the potential of customized fiber gratings to be suitably employed for improving the interrogation process of optical fiber sensors and systems. This Ph.D. dissertation is focused on the study, design, fabrication and performance evaluation of customized...

  14. Nonlinear switching in a concentric ring core chalcogenide glass optical fiber for passively mode-locking a fiber laser

    CERN Document Server

    Nazemosadat, Elham

    2014-01-01

    We propose an all-fiber mode-locking device which operates based on nonlinear switching in a novel concentric ring core fiber structure. The design is particularly attractive given the ease of fabrication and coupling to other components in a mode-locked fiber laser cavity. The nonlinear switching in this coupler is studied and the relative power transmission is obtained. The analysis shows that this nonlinear switch is practical for mode-locking fiber lasers and is forgiving to fabrication errors.

  15. Silicon nitride gate dielectrics and bandgap engineering in graphene layers

    OpenAIRE

    Zhu, Wenjuan; Neumayer, Deborah; Perebeinos, Vasili; Avouris, Phaedon

    2010-01-01

    We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point we estimate the field-in...

  16. Effects of corrugation shape on frequency band-gaps for longitudinal wave motion in a periodic elastic layer

    DEFF Research Database (Denmark)

    Sorokin, Vladislav

    2016-01-01

    The paper concerns determining frequency band-gaps for longitudinal wave motion in a periodic waveguide. The waveguide may be considered either as an elastic layer with variable thickness or as a rod with variable cross section. As a result, widths and locations of all frequency band-gaps are det......The paper concerns determining frequency band-gaps for longitudinal wave motion in a periodic waveguide. The waveguide may be considered either as an elastic layer with variable thickness or as a rod with variable cross section. As a result, widths and locations of all frequency band......, harmonic in the corrugation series. The revealed insights into the mechanism of band-gap formation can be used to predict locations and widths of all frequency band-gaps featured by any corrugation shape. These insights are general and can be valid also for other types of wave motion in periodic structures......, e.g., transverse or torsional vibration....

  17. Novel manufacturing method of optical fiber coupler

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Based on the coupling mode theory that the coupling ratio of fiber coupler changes periodically with canter distance of two optical fibers, a novel manufacturing method of optical fiber couplers was developed with fused biconical taper experimental system. Its fabrication process is that the fiber is fused but not stretched when light begins to split, and the reduction of diameter of fiber is dependent on the rheological characteristic of the fused fiberglass. The performance of the coupler was tested. The results show that the performance of the novel optical fiber coupler meets the performance expectations, and its diameter of coupling region (about 30 μm) is twice as long as that of classical fused biconical taper coupler (about 16 μm), so the default, that is, the device is easy to fracture, is restrained and the reliability is greatly improved.

  18. Low-temperature-grown InGaAs quantum wells for optical device applications

    Science.gov (United States)

    Juodawlkis, Paul William

    1999-11-01

    The large optical absorption and carrier-induced nonlinearities of semiconductor materials are useful for optical signal processing applications. For absorptive devices operating at ultrafast data rates (>100 Gb/s) or high optical intensities, it is necessary to reduce the intrinsic photo-excited carrier removal time. One method of achieving this reduction is to increase the nonradiative recombination rate through the controlled introduction of defects. In this thesis, we explore the use of low-temperature molecular-beam epitaxy (MBE) to introduce nonradiative recombination centers into InGaAs-based quantum-wells (QWs). The objectives of the thesis are: (i)to improve the understanding of the optoelectronic properties of low-temperature-grown (LTG) InGaAs/InAlAs QWs, and (ii)to assess the feasibility of using these materials for optical device applications in the 1.5-μm wavelength region. Time-resolved differential transmission measurements reveal that the nonlinear absorption recovery time in InGaAs/InAlAs QWs can be reduced from >100 ps to 0.6 ps through the combination of low-temperature growth (~250°C) and beryllium (Be) doping. The bandedge absorption slope and the nonlinear absorption cross- section are only diminished by factors of 2 to 3 relative to QWs grown at standard temperature (~500°C). The Be doping dependence of the recovery time and the residual electron density in the LTG-QWs can be mainly attributed to impurity-related compensation. Be doping also maintains the ultrafast recovery following thermal anneal. The recovery response results from fast electron- trapping followed by slow (>100 ps) trapped- electron/free-hole recombination. Detailed simulations of the nonlinear absorption saturation and recovery processes agree quantitatively with measured data and substantiate the importance of the photo-excitation wavelength on the observed recovery response. The absorption saturation model includes the competition between band-filling and band-gap

  19. Radiation effects in optoelectronic devices

    International Nuclear Information System (INIS)

    Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given

  20. Thermally activated emission from direct bandgap-like silicon quantum dots

    NARCIS (Netherlands)

    K. Dohnalova; S. Saeed; A. N. Poddubny; A.A. Prokofiev; T. Gregorkiewicz

    2013-01-01

    Due to the covalent character of silicon-carbon (Si-C) bond, C-linked molecules on the silicon quantum dot (SiQD) surface lead to dramatic changes in wavefunctions of the excited electron-hole pairs. Some of the optical transitions are strongly modified and attain direct bandgap-like character, givi

  1. Ultrathin Fe3O4 epitaxial films on wide bandgap GaN

    NARCIS (Netherlands)

    Wong, P.K.J.; Zhang, W.; Cui, X.G.; Wu, J.; Xu, Y.B.; Tao, Z.K.; Li, X.; Xie, Z.L.; Zhang, R.; Van de Laan, G.

    2010-01-01

    Ultrathin films of magnetite Fe3O4 have been grown epitaxially on wurtzite wide bandgap semiconductor GaN0001 surfaces using molecular-beam epitaxy. Reflection high-energy electron-diffraction patterns show a 111 orientation of the Fe3O4 films and in-plane epitaxial relationship of 11¯0Fe3O4 112¯0G

  2. Analysis of photonic band-gap (PBG) structures using the FDTD method

    DEFF Research Database (Denmark)

    Tong, M.S.; Cheng, M.; Lu, Y.L.;

    2004-01-01

    In this paper, a number of photonic band-gap (PBG) structures, which are formed by periodic circuit elements printed oil transmission-line circuits, are studied by using a well-known numerical method, the finite-difference time-domain (FDTD) method. The results validate the band-stop filter...

  3. 10 Gbit/s transmission over air-guiding photonic bandgap fibre at 1550 nm

    DEFF Research Database (Denmark)

    Peucheret, Christophe; Zsigri, Beata; Hansen, T.P.;

    2005-01-01

    The first data transmission over air-guiding photonic bandgap (PBG) fibre is demonstrated. A 10 Gbit/s signal was successfully transmitted at 1550 nm over 150 m of singlemode PBG fibre, thus demonstrating their applicability to optical communications. Furthermore, the impact of the polarisation...

  4. Physical ageing in the above-bandgap photoexposured glassy arsenic selenides

    Energy Technology Data Exchange (ETDEWEB)

    Kozdras, A [Faculty of Physics of Opole University of Technology, 75, Ozimska str., Opole, PL-45370 (Poland); Golovchak, R [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-79031 (Ukraine); Shpotyuk, O [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-79031 (Ukraine)

    2007-08-15

    Physical ageing induced by above-bandgap light illumination is studied in glassy As-Se using differential scanning calorimetry. It is shown that measurable effect like to known short-term physical ageing is observed only in Se-rich glasses. The kinetics of this effect is compared with that caused by natural storage in a dark.

  5. Extremely small bandgaps, engineered by controlled multi-scale ordering in InAsSb

    Science.gov (United States)

    Sarney, W. L.; Svensson, S. P.; Lin, Y.; Donetsky, D.; Shterengas, L.; Kipshidze, G.; Belenky, G.

    2016-06-01

    The relationship between the effective bandgap and the crystalline structure in ordered InAsSb material has been studied. Modulation of the As/Sb ratio was induced along the growth direction during molecular beam epitaxy, producing a strained layer superlattice. To enable the use of concentration ratios near unity in both layers in the period, the structures were grown with negligible net strain on a virtual substrate with a lattice constant considerably larger than that of GaSb. The bandgap line-up of InAsSb layers with different compositions is such that a type II superlattice is formed, which exhibits smaller bandgaps than either of the two constituents. It can also be smaller than the possible minimum direct-bandgap of the alloy. From observations of CuPt ordering in bulk layers with small amounts of strain of both signs, we postulate that strain is the main driving force for atomic ordering in InAsSb. Because the modulated structures exhibit small but opposing amounts of strain, both layers in the period exhibit ordering at the atomic scale throughout the structure. Since the strain can be controlled, the ordering can be controlled and sustained for arbitrary thick layers, unlike the situation in uniform bulk layers where the residual strain eventually leads to dislocation formation. This offers a unique way of using ordering at two different scales to engineer the band-structure.

  6. Size dependence of the bandgap of plasma synthesized silicon nanoparticles through direct introduction of sulfur hexafluoride

    Energy Technology Data Exchange (ETDEWEB)

    Theingi, S.; Guan, T. Y.; Klafehn, G.; Taylor, P. C.; Lusk, M. T.; Collins, R. T., E-mail: rtcollin@mines.edu [Department of Physics, Colorado School of Mines, Golden, Colorado 80401 (United States); Renewable Energy Materials Research Science and Engineering Center, Colorado School of Mines, Golden, Colorado 80401 (United States); Kendrick, C. [Department of Physics, Colorado School of Mines, Golden, Colorado 80401 (United States); Renewable Energy Materials Research Science and Engineering Center, Colorado School of Mines, Golden, Colorado 80401 (United States); Electrical and Computer Engineering, Michigan Technological University, Houghton, Michigan 49931 (United States); Gorman, B. P. [Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401 (United States); Stradins, P. [Renewable Energy Materials Research Science and Engineering Center, Colorado School of Mines, Golden, Colorado 80401 (United States); National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2015-10-19

    Developing silicon nanoparticle (SiNP) synthesis techniques that allow for straightforward control of nanoparticle size and associated optical properties is critical to potential applications of these materials. In addition, it is, in general, hard to probe the absorption threshold in these materials due to silicon's low absorption coefficient. In this study, size is controlled through direct introduction of sulfur hexafluoride (SF{sub 6}) into the dilute silane precursor of plasma synthesized SiNPs. Size reduction by nearly a factor of two with high crystallinity independent of size is demonstrated. The optical absorption spectra of the SiNPs in the vicinity of the bandgap are measured using photothermal deflection spectroscopy. Bandgap as a function of size is extracted taking into account the polydispersity of the samples. A systematic blue shift in absorption edge due to quantum confinement in the SiNPs is observed with increasing flow of SF{sub 6}. Photoluminescence (PL) spectra show a similar blue shift with size. However, a ∼300 meV difference in energy between emission and absorption for all sizes suggests that PL emission involves a defect related process. This shows that, while PL may allow size-induced shifts in the bandgap of SiNPs to be monitored, it cannot be relied on to give an accurate value for the bandgap as a function of size.

  7. Effective mass density based topology optimization of locally resonant acoustic metamaterials for bandgap maximization

    Science.gov (United States)

    Yang, Xiong Wei; Lee, Joong Seok; Kim, Yoon Young

    2016-11-01

    Because effective material properties are essential concepts in the analyses of wave phenomena in metamaterials, they may also be utilized in the optimal design of metamaterials. In this work, we propose a topology optimization method directly using the Effective Mass Density (EMD) concept to maximize the first bandgaps of two-dimensional solid Locally Resonant Acoustic Metamaterials (LRAMs). When the first bandgap is characterized by the negative EMD, the bandgap maximization can be formulated efficiently as a topology optimization problem to broaden the frequency zone of the negative EMD values. In this work, EMD is calculated by considering the macroscopic isotropy of LRAMs in the long wavelength limit. To facilitate the analytical sensitivity analysis, we propose an elaborate calculation scheme of EMD. A sensitivity averaging technique is also suggested to guarantee the macroscopically isotropic behavior of the LRAMs. In the present study, the coating layer interfacing the core and the matrix of a ternary LRAM is chosen as the design region because it significantly influences the bandgap. By considering several numerical examples, the validity of this method is verified, and the effects of the mass constraint ratios on the optimized results are also investigated.

  8. Effects of weak nonlinearity on dispersion relations and frequency band-gaps of periodic structures

    DEFF Research Database (Denmark)

    Sorokin, Vladislav; Thomsen, Jon Juel

    2015-01-01

    The analysis of the behaviour of linear periodic structures can be traced back over 300 years, to Sir Isaac Newton, and still attracts much attention. An essential feature of periodic struc-tures is the presence of frequency band-gaps, i.e. frequency ranges in which waves cannot propagate...

  9. Bandgap determination of P(VDF–TrFE) copolymer film by electron energy loss spectroscopy

    Indian Academy of Sciences (India)

    Dipankar Mandal; K Henkel; K Müller; D Schmeißer

    2010-08-01

    The ferroelectric of poly(vinylidene fluoride trifluoroethylene), P(VDF–TrFE) is confirmed for 100 nm thickness spin coated copolymer film. The homogeneous coverage of the copolymer film is investigated by the help of X-ray photoelectron spectroscopy (XPS). Most importantly, the existing bandgap in the crystalline phase of the copolymer is determined directly from the electron energy loss spectroscopy (EELS).

  10. Analysis of band-gap formation in squashed arm-chair CNT

    CERN Document Server

    Mehrer, H; Anantram, M P; Elstner, M; Frauenheim, T

    2005-01-01

    The electronic properties of squashed arm-chair carbon nanotubes are modeled using constraint free density functional tight binding molecular dynamics simulations. Independent from CNT diameter, squashing path can be divided into {\\it three} regimes. In the first regime, the nanotube deforms with negligible force. In the second one, there is significantly more resistance to squashing with the force being $\\sim 40-100$ nN/per CNT unit cell. In the last regime, the CNT looses its hexagonal structure resulting in force drop-off followed by substantial force enhancement upon squashing. We compute the change in band-gap as a function of squashing and our main results are: (i) A band-gap initially opens due to interaction between atoms at the top and bottom sides of CNT. The $\\pi-$orbital approximation is successful in modeling the band-gap opening at this stage. (ii) In the second regime of squashing, large $\\pi-\\sigma$ interaction at the edges becomes important, which can lead to band-gap oscillation. (iii) Contr...

  11. A Fresh Look at the Semiconductor Bandgap Using Constant Current Data

    Science.gov (United States)

    Ocaya, R. O.; Luhanga, P. V. C.

    2011-01-01

    It is shown that the well-known linear variation of p-n diode terminal voltage with temperature at different fixed forward currents allows easy and accurate determination of the semiconductor ideality factor and bandgap from only two data points. This is possible if the temperature difference required to maintain the same diode voltage drop can be…

  12. Infiltration liquid crystal in microstructured polymer optical fibers

    DEFF Research Database (Denmark)

    Yuan, Scott Wu; Wei, Lei; Bang, Ole

    2009-01-01

    7 is then infiltrated into about 6 cm of the length of mPOF by using capillary forces with the duration of 45 minutes. The transmission spectrum is measured by an optical spectrum analyzer with 1 nm resolution, and normalized to that of the unfilled fiber as shown by the solid line. The difference...... of spectra clearly reveals that, by filling the liquid crystal, some new bandgaps are formed in the wavelength range of 730 nm -780 nm, which is quite different with the material loss spectrum....

  13. Fiber-optic color synthesizer.

    Science.gov (United States)

    Jeong, Y; Lee, D; Lee, Jhang W; Oh, K

    2006-07-15

    Full-color synthesis was achieved, for what we believe is the first time, utilizing a novel 3x1 hard polymer-clad fiber coupler along with red, green, and blue (RGB) LED primaries. By using RGB LEDs that are coupled to three input ports, the device rendered full color from the output port with a circular emitting pixel of 135 microm in diameter with an extended color gamut. The proposed fiber-optic color synthesizer can provide a compact waveguide solution for the beam scanning display and the tunable pure white source for LED backlighting.

  14. Lab-on-fiber technology

    CERN Document Server

    Cusano, Andrea; Crescitelli, Alessio; Ricciardi, Armando

    2014-01-01

    This book focuses on a research field that is rapidly emerging as one of the most promising ones for the global optics and photonics community: the "lab-on-fiber" technology. Inspired by the well-established 'lab on-a-chip' concept, this new technology essentially envisages novel and highly functionalized devices completely integrated into a single optical fiber for both communication and sensing applications.Based on the R&D experience of some of the world's leading authorities in the fields of optics, photonics, nanotechnology, and material science, this book provides a broad and accurate de

  15. Fiber Bragg Grating Based Thermometry

    CERN Document Server

    Ahmed, Zeeshan; Guthrie, William; Quintavalle, John

    2016-01-01

    In recent years there has been considerable interest in developing photonic temperature sensors such as the Fiber Bragg gratings (FBG) as an alternative to resistance thermometry. In this study we examine the thermal response of FBGs over the temperature range of 233 K to 393 K. We demonstrate, in a hermetically sealed dry Argon environment, that FBG devices show a quadratic dependence on temperature with expanded uncertainties (k = 2) of ~500 mK. Our measurements indicate that the combined measurement uncertainty is dominated by uncertainty in determining the peak center fitting and by thermal aging of polyimide coated fibers.

  16. A phase mask fiber grating and sensing applications

    Directory of Open Access Journals (Sweden)

    Preecha P. Yupapin

    2003-09-01

    Full Text Available This paper presents an investigation of a fabricated fiber grating device characteristics and its applications, using a phase mask writing technique. The use of a most common UV phase laser (KrF eximer laser, with high intensity light source was focussed to the phase mask for writing on a fiber optic sample. The device (i.e. grating characteristic especially, in sensing application, was investigated. The possibility of using such device for temperature and strain sensors is discussed.

  17. Electrical Properties of Macro-Fiber Composite Actuators and Sensors

    OpenAIRE

    Lloyd, Justin Michael

    2004-01-01

    Piezoceramic fiber composite (PFC) actuators and sensors offer many advantages over conventional monolithic piezoceramic devices. Conformable, durable and, when equipped with interdigitated electrodes (IDEs), more responsive than regular monolithic devices, PFCs promise to revolutionize the application of piezoelectric materials. Developed by the NASA-Langley Research Center, the Macro-Fiber Composite (MFC) actuator and sensor is the most sophisticated PFC device yet invented. With superio...

  18. Monolithic, High-Speed Fiber-Optic Switching Array for Lidar Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed optical device is a fiber-based multi-channel switch to quickly switch a fiber-coupled laser among many possible output channels to create a...

  19. Ultrafast band-gap oscillations in iron pyrite

    Energy Technology Data Exchange (ETDEWEB)

    Kolb, B; Kolpak, AM

    2013-12-20

    With its combination of favorable band gap, high absorption coefficient, material abundance, and low cost, iron pyrite, FeS2, has received a great deal of attention over the past decades as a promising material for photovoltaic applications such as solar cells and photoelectrochemical cells. Devices made from pyrite, however, exhibit open circuit voltages significantly lower than predicted, and despite a recent resurgence of interest in the material, there currently exists no widely accepted explanation for this disappointing behavior. In this paper, we show that phonons, which have been largely overlooked in previous efforts, may play a significant role. Using fully self-consistent GW calculations, we demonstrate that a phonon mode related to the oscillation of the sulfur-sulfur bond distance in the pyrite structure is strongly coupled to the energy of the conduction-band minimum, leading to an ultrafast (approximate to 100 fs) oscillation in the band gap. Depending on the coherency of the phonons, we predict that this effect can cause changes of up to +/- 0.3 eV relative to the accepted FeS2 band gap at room temperature. Harnessing this effect via temperature or irradiation with infrared light could open up numerous possibilities for novel devices such as ultrafast switches and adaptive solar absorbers.

  20. Band-gap shrinkage calculations and analytic model for strained bulk InGaAsP

    Science.gov (United States)

    Connelly, Michael J.

    2015-02-01

    Band-gap shrinkage is an important effect in semiconductor lasers and optical amplifiers. In the former it leads to an increase in the lasing wavelength and in the latter an increase in the gain peak wavelength as the bias current is increased. The most common model used for carrier-density dependent band-gap shrinkage is a cube root dependency on carrier density, which is strictly only true for high carrier densities and low temperatures. This simple model, involves a material constant which is treated as a fitting parameter. Strained InGaAsP material is commonly used to fabricate polarization insensitive semiconductor optical amplifiers (SOAs). Most mathematical models for SOAs use the cube root bandgap shrinkage model. However, because SOAs are often operated over a wide range of drive currents and input optical powers leading to large variations in carrier density along the amplifier length, for improved model accuracy it is preferable to use band-gap shrinkage calculated from knowledge of the material bandstructure. In this letter the carrier density dependent band-gap shrinkage for strained InGaAsP is calculated by using detailed non-parabolic conduction and valence band models. The shrinkage dependency on temperature and both tensile and compressive strain is investigated and compared to the cube root model, for which it shows significant deviation. A simple power model, showing an almost square-root dependency, is derived for carrier densities in the range usually encountered in InGaAsP laser diodes and SOAs.