Calculation of complex band structure for low symmetry lattices
Srivastava, Manoj; Zhang, Xiaoguang; Cheng, Hai-Ping
2009-03-01
Complex band structure calculation is an integral part of a first-principles plane-wave based quantum transport method. [1] The direction of decay for the complex wave vectors is also the transport direction. The existing algorithm [1] has the limitation that it only allows the transport direction along a lattice vector perpendicular to the basal plane formed by two other lattice vectors, e.g., the c-axis of a tetragonal lattice. We generalize this algorithm to nonorthogonal lattices with transport direction not aligned with any lattice vector. We show that this generalization leads to changes in the boundary conditions and the Schrodinger's equation projected to the transport direction. We present, as an example, the calculation of the complex band structure of fcc Cu along a direction perpendicular to the (111) basal plane. [1] Hyoung Joon Choi and Jisoon Ihm, Phys. Rev. B 59, 2267 (1999).
Emission bands of phosphorus and calculation of band structure of rare earth phosphides
International Nuclear Information System (INIS)
The method of x-ray emission spectroscopy has been used to investigate the electronic structure of monophosphides of rare-earth metals (REM). The fluorescence K bands of phosphorus have been obtained in LaP, PrP, SmP, GdP, TbP, DyP, HoP, ErP, TmP, YbP, and LuP and also the Lsub(2,3) bands of phosphorus in ErP, TmP, YbP, and LuP. Using the Green function technique involving the muffin-tin potential, the energy spectrum for ErP has been calculated in the single-electron approximation. The hystogram of electronic state distribution N(E) is compared with the experimental K and Lsub(2,3) bands of phosphorus in ErP. The agreement between the main details of N(E) and that of x-ray spectra allows to state that the model used provides a good description of the electron density distribution in crystals of REM monophosphides. In accordance with the character of the N(E) distribution the compounds under study are classified as semimetals or semiconductors with a very narrow forbidden band
The LDA+U calculation of electronic band structure of GaAs
Bahuguna, B. P.; Sharma, R. O.; Saini, L. K.
2016-05-01
We present the electronic band structure of bulk gallium arsenide (GaAs) using first principle approach. A series of calculations has been performed by applying norm-conserving pseudopotentials and ultrasoft non-norm-conserving pseudopotentials within the density functional theory. These calculations yield too small band gap as compare to experiment. Thus, we use semiemperical approach called local density approximation plus the multi-orbital mean-field Hubbard model (LDA+U), which is quite effective in order to describe the band gap of GaAs.
k.p Parameters with Accuracy Control from Preexistent First-Principles Band Structure Calculations
Sipahi, Guilherme; Bastos, Carlos M. O.; Sabino, Fernando P.; Faria Junior, Paulo E.; de Campos, Tiago; da Silva, Juarez L. F.
The k.p method is a successful approach to obtain band structure, optical and transport properties of semiconductors. It overtakes the ab initio methods in confined systems due to its low computational cost since it is a continuum method that does not require all the atoms' orbital information. From an effective one-electron Hamiltonian, the k.p matrix representation can be calculated using perturbation theory and the parameters identified by symmetry arguments. The parameters determination, however, needs a complementary approach. In this paper, we developed a general method to extract the k.p parameters from preexistent band structures of bulk materials that is not limited by the crystal symmetry or by the model. To demonstrate our approach, we applied it to zinc blende GaAs band structure calculated by hybrid density functional theory within the Heyd-Scuseria-Ernzerhof functional (DFT-HSE), for the usual 8 ×8 k.p Hamiltonian. Our parameters reproduced the DFT-HSE band structure with great accuracy up to 20% of the first Brillouin zone (FBZ). Furthermore, for fitting regions ranging from 7-20% of FBZ, the parameters lie inside the range of values reported by the most reliable studies in the literature. The authors acknowledge financial support from the Brazilian agencies CNPq (Grant #246549/2012-2) and FAPESP (Grants #2011/19333-4, #2012/05618-0 and #2013/23393-8).
DEFF Research Database (Denmark)
Christensen, N. Egede; Feuerbacher, B.
1974-01-01
The electronic energy-band structure of tungsten has been calculated by means of the relativistic-augmented-plane-wave method. A series of mutually related potentials are constructed by varying the electronic configuration and the amount of Slater exchange included. The best band structure...... of photoemission spectra from W single crystals. The nondirect as well as the direct models for bulk photoemission processes are investigated. The emission from the three low-index surfaces (100), (110), and (111) exhibits strong dependence on direction and acceptance cone. According to the present band model.......e., emission of those electrons which are excited in a single-step process from initial states near the surface to final states outside the crystal. The electrons that are emitted from the surface in directions perpendicular to the crystal planes carry information on the one-dimensional surface density...
The calculation of the band structure in 3D phononic crystal with hexagonal lattice
Energy Technology Data Exchange (ETDEWEB)
Aryadoust, Mahrokh; Salehi, H. [University of Shahid Chamran, Ahvaz (Iran, Islamic Republic of). Dept. of Physics
2015-07-01
In this article, the propagation of acoustic waves in the phononic crystals (PCs) of three dimensions with the hexagonal (HEX) lattice is studied theoretically. The PCs are constituted of nickel (Ni) spheres embedded in epoxy. The calculations of the band structure and the density of states are performed using the plane wave expansion (PWE) method in the irreducible part of the Brillouin zone (BZ). In this study, we analyse the dependence of the band structures inside (the complete band gap width) on c/a and filling fraction in the irreducible part of the first BZ. Also, we have analysed the band structure of the ALHA and MLHKM planes. The results show that the maximum width of absolute elastic band gap (AEBG) (0.045) in the irreducible part of the BZ of HEX lattice is formed for c/a=6 and filling fraction equal to 0.01. In addition, the maximum of the first and second AEBG widths are 0.0884 and 0.0474, respectively, in the MLHKM plane, and the maximum of the first and second AEBG widths are 0.0851 and 0.0431, respectively, in the ALHA plane.
Bloch mode synthesis: Ultrafast methodology for elastic band-structure calculations
Krattiger, Dimitri; Hussein, Mahmoud I.
2014-12-01
We present a methodology for fast band-structure calculations that is generally applicable to problems of elastic wave propagation in periodic media. The methodology, called Bloch mode synthesis, represents an extension of component mode synthesis, a set of substructuring techniques originally developed for structural dynamics analysis. In Bloch mode synthesis, the unit cell is divided into interior and boundary degrees-of-freedom, which are described, respectively, by a set of normal modes and a set of constraint modes. A combination of these mode sets then forms a reduced basis for the band structure eigenvalue problem. The reduction is demonstrated on a phononic-crystal model and a locally resonant elastic-metamaterial model and is shown to accurately predict the frequencies and Bloch mode shapes with a dramatic decrease in computation time in excess of two orders of magnitude.
Directory of Open Access Journals (Sweden)
Yu Wang
2002-01-01
Full Text Available Abstract:We investigate a theoretical model of molecular metalwire constructed from linear polynuclear metal complexes. In particular we study the linear Crn metal complex and Cr molecular metalwire. The electron density distributions of the model nanowire and the linear Crn metal complexes, with n = 3, 5, and 7, are calculated by employing CRYSTAL98 package with topological analysis. The preliminary results indicate that the bonding types between any two neighboring Cr are all the same, namely the polarized open-shell interaction. The pattern of electron density distribution in metal complexes resembles that of the model Cr nanowire as the number of metal ions increases. The conductivity of the model Cr nanowire is also tested by performing the band structure calculation.
Fang, C.M.; Smaalen, S. van; Wiegers, G.A.; Haas, C.; Groot, R.A. de
1996-01-01
In order to understand the electronic structure of the misfit layer compound (LaS)1.14NbS2 we carried out an ab initio band-structure calculation in a supercell approximation. The band structure is compared with that of the components NbS2 and LaS. The calculations show that the electronic structure
Fang, CM; vanSmaalen, S; Wiegers, GA; Haas, C; deGroot, RA
1996-01-01
In order to understand the electronic structure of the misfit layer compound (LaS)(1.14)NbS2 we carried out an ab initio band-structure calculation in a supercell approximation. The band structure is compared with that of the components NbS2 and LaS. The calculations show that the electronic structu
BAND-STRUCTURE AND CLUSTER-MODEL CALCULATIONS OF LACOO(3) IN THE LOW-SPIN PHASE
ABBATE, M; POTZE, R; SAWATZKY, GA; FUJIMORI, A
1994-01-01
We present band-structure and cluster-model calCulatiOns Of LaCoO3 in the low-spin phase. The purpose of these calculations is to contrast and complement the results and conclusions of recent spectroscopic studies. The total density of states (DOS) is compared to the photoemission spectrum; the agre
First-Principles Band Calculations on Electronic Structures of Ag-Doped Rutile and Anatase TiO2
Institute of Scientific and Technical Information of China (English)
HOU Xing-Gang; LIU An-Dong; HUANG Mei-Dong; LIAO Bin; WU Xiao-Ling
2009-01-01
The electronic structures of Ag-doped rutile and anatase TiO2 are studied by first-principles band calculations based on density funetionai theory with the full-potentiai linearized-augraented-plane-wave method.New occupied bands ore found between the band gaps of both Ag-doped rutile and anatase TiO2.The formation of these new bands Capri be explained mainly by their orbitals of Ag 4d states mixed with Ti 3d states and are supposed to contribute to their visible light absorption.
Fang, CM; deGroot, RA; Wiegers, GA; Haas, C
1996-01-01
In order to understand the electronic structure of the incommensurate misfit layer compound (SnS)(1.20)TiS2 we carried out an ab initio band structure calculation in the supercell approximation. The band structure is compared with that of the components 1T-TiS2 and hypothetical SnS with a similar st
Fang, C.M.; Groot, R.A. de; Wiegers, G.A.; Haas, C.
1996-01-01
In order to understand the electronic structure of the incommensurate misfit layer compound (SnS)1.20TiS2 we carried out an ab initio band structure calculation in the supercell approximation. The band structure is compared with that of the components 1T-TiS2 and hypothetical SnS with a similar stru
Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele
2016-01-01
We present and thoroughly compare band-structures computed with density functional theory, tight-binding, k · p and non-parabolic effective mass models. Parameter sets for the non-parabolic Γ, the L and X valleys and intervalley bandgaps are extracted for bulk InAs, GaAs and InGaAs. We then consider quantum-wells with thickness ranging from 3 nm to 10 nm and the bandgap dependence on film thickness is compared with experiments for In0.53Ga0.47 As quantum-wells. The impact of the band-structure on the drain current of nanoscale MOSFETs is simulated with ballistic transport models, the results provide a rigorous assessment of III-V semiconductor band structure calculation methods and calibrated band parameters for device simulations.
Energy Technology Data Exchange (ETDEWEB)
Smith, Matthew W.; Dallmeyer, Ian; Johnson, Timothy J.; Brauer, Carolyn S.; McEwen, Jean-Sabin; Espinal, Juan F.; Garcia-Perez, Manuel
2016-04-01
Raman spectroscopy is a powerful tool for the characterization of many carbon 27 species. The complex heterogeneous nature of chars and activated carbons has confounded 28 complete analysis due to the additional shoulders observed on the D-band and high intensity 29 valley between the D and G-bands. In this paper the effects of various vacancy and substitution 30 defects have been systematically analyzed via molecular modeling using density functional 31 theory (DFT) and how this is manifested in the calculated gas-phase Raman spectra. The 32 accuracy of these calculations was validated by comparison with (solid-phase) experimental 33 spectra, with a small correction factor being applied to improve the accuracy of frequency 34 predictions. The spectroscopic effects on the char species are best understood in terms of a 35 reduced symmetry as compared to a “parent” coronene molecule. Based upon the simulation 36 results, the shoulder observed in chars near 1200 cm-1 has been assigned to the totally symmetric 37 A1g vibrations of various small polyaromatic hydrocarbons (PAH) as well as those containing 38 rings of seven or more carbons. Intensity between 1400 cm-1 and 1450 cm-1 is assigned to A1g 39 type vibrations present in small PAHs and especially those containing cyclopentane rings. 40 Finally, band intensity between 1500 cm-1 and 1550 cm-1 is ascribed to predominately E2g 41 vibrational modes in strained PAH systems. A total of ten potential bands have been assigned 42 between 1000 cm-1 and 1800 cm-1. These fitting parameters have been used to deconvolute a 43 thermoseries of cellulose chars produced by pyrolysis at 300-700 °C. The results of the 44 deconvolution show consistent growth of PAH clusters with temperature, development of non-45 benzyl rings as temperature increases and loss of oxygenated features between 400 °C and 46 600 °C
Application of the new LDA+GTB method for the band structure calculation of n-type cuprates
Energy Technology Data Exchange (ETDEWEB)
Korshunov, M.M. [L.V. Kirensky Institute of Physics, Siberian Branch of Russian Academy of Sciences, 660036 Krasnoyarsk (Russian Federation)]. E-mail: mkor@iph.krasn.ru; Ovchinnikov, S.G. [L.V. Kirensky Institute of Physics, Siberian Branch of Russian Academy of Sciences, 660036 Krasnoyarsk (Russian Federation); Gavrichkov, V.A. [L.V. Kirensky Institute of Physics, Siberian Branch of Russian Academy of Sciences, 660036 Krasnoyarsk (Russian Federation); Nekrasov, I.A. [Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 620219 Yekaterinburg GSP-170 (Russian Federation); Pchelkina, Z.V. [Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 620219 Yekaterinburg GSP-170 (Russian Federation); Anisimov, V.I. [Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 620219 Yekaterinburg GSP-170 (Russian Federation)
2006-05-01
A novel hybrid scheme is proposed and applied for band structure calculations of undoped n-type cuprate Nd{sub 2}CuO{sub 4}. The ab initio LDA calculation is used to obtain single electron and Coulomb parameters of the multiband Hubbard-type model. In strong correlation regime the electronic structure within this model is calculated by the generalized tight-binding (GTB) method, that combines the exact diagonalization of the model Hamiltonian for a small cluster with perturbation treatment of the intercluster hopping and interactions. For Nd{sub 2}CuO{sub 4}, this scheme results in charge transfer insulator with value of the gap and band dispersion in agreement to the experimental data.
International Nuclear Information System (INIS)
The band structures of III-V semiconductors (InP, InAs, InSb, GaAs, and GaSb) are calculated using the HSE06 hybrid functional, GW, and local potentials optimized for the description of band gaps. We show that the inclusion of a quarter of the exact HF exchange allows to predict accurate direct band gaps for InP, InAs, and InSb, i.e., 1.48, 0.42, 0.28 eV, in good agreement with recent experiments, i.e., 1.42, 0.42, 0.24 eV, respectively. The calculated effective masses and Luttinger parameters are also in reasonable agreement with experiment, although a tendency towards underestimation is observed with increasing anion mass. In order to find more efficient methods than hybrid functionals, the modified Becke-Johnson exchange potential is also employed to calculate the effective masses. The agreement of the effective masses with experiment is comparable to the one obtained with the HSE06 hybrid functional. Therefore, this opens a way to model band structures of much large systems than possible using hybrid functionals.
Coehoorn, R.; Haas, C.; Dijkstra, J.; Flipse, C.J.F.; de Groot, R. A.; Wold, A.
1987-01-01
The band structures of the semiconducting layered compounds MoSe2, MoS2, and WSe2 have been calculated self-consistently with the augmented-spherical-wave method. Angle-resolved photoelectron spectroscopy of MoSe2 using He I, He II, and Ne I radiation, and photon-energy-dependent normal-emission photoelectron spectroscopy using synchrotron radiation, show that the calculational results give a good description of the valence-band structure. At about 1 eV below the top of the valence band a dis...
Band structure of semiconductors
Tsidilkovski, I M
2013-01-01
Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio
Metal-ceramic interface adhesion: Band structure calculations on Pt-NiO couples
Energy Technology Data Exchange (ETDEWEB)
Boorse, R.S.; Burlitch, J.M.; Hoffmann, R.; Alemany, P. (Cornell Univ., Ithaca, NY (United States))
1993-04-01
A problem of critical technological importance and fundamental scientific interest in materials science and materials engineering is that of adhesion between metals and ceramics. metal-ceramic adhesion is important to such industrial areas as microelectronics, catalysts, protective coatings for metals and metal-ceramic composite materials. Under certain annealing conditions Pt-NiO couples form NiPt intermetallic layers at the interface. It has been suggested that an observed 4-fold increase in the ultimate shear strength of the interface upon inclusion of a 1-nm-thick NiPt interlayer is caused by metal-oxygen bonding at the interface. Extended Huckel calculations, within the tight-binding formalism, have been performed on a series of Pt- and NiPt-NiO metal-ceramic couples to elucidate the nature of the bonding at these interfaces. the calculations showed an approximately 5-fold increase in adhesion energy in NiPt-NiO over Pt-NiO. This attributed to the more efficient electron donating capability of nickel compared to that of platinum. Bonding across the interface is found to decrease with increased electron donation as interfacially antibonding orbitals are filled. Theoretical reasons for the eventual mechanical failure in the oxide component are adduced. 25 refs., 7 figs., 3 tabs.
Directory of Open Access Journals (Sweden)
D. P. Samajdar
2014-01-01
Full Text Available The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E+ levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E− energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.
Electronic band structure and specific features of Sm{sub 2}NiMnO{sub 6} compound: DFT calculation
Energy Technology Data Exchange (ETDEWEB)
Reshak, A.H. [Institute of complex systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Azam, Sikander, E-mail: sikander.physicst@gmail.com [Institute of complex systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic)
2013-09-15
The band structure, density of states, electronic charge density, Fermi surface and optical properties of Sm{sub 2}NiMnO{sub 6} compound have been investigated with the support of density functional theory (DFT). The atomic positions of Sm{sub 2}NiMnO{sub 6} compound were optimized by minimizing the forces acting on the atoms, using the full potential linear augmented plane wave method. We employed the local density approximation (LDA), generalized gradient approximation (GGA) and Engel–Vosko GGA (EVGGA) to treat the exchange correlation potential by solving Kohn–Sham equations. The calculation shows that the compound is metallic with strong hybridization near the Fermi energy level (E{sub F}). The calculated density of states at the E{sub F} is about 21.60, 24.52 and 26.21 states/eV, and the bare linear low-temperature electronic specific heat coefficient (γ) is found to be 3.74, 4.25 and 4.54 mJ/mol K{sup 2} for EVGGA, GGA and LDA, respectively. The Fermi surface is composed of two sheets. The bonding features of the compounds are analyzed using the electronic charge density in the (011) crystallographic plane. The dispersion of the optical constants was calculated and discussed. - Highlights: • The compound is metallic with strong hybridization near the Fermi energy. • The density of states at the Fermi energy is calculated. • The bare linear low-temperature electronic specific heat coefficient is obtained. • Fermi surface is composed of two sheets. • The bonding features are analyzed using the electronic charge density.
DEFF Research Database (Denmark)
Svane, Axel; Christensen, Niels Egede; Cardona,, M.;
2010-01-01
The electronic band structures of PbS, PbSe, and PbTe in the rocksalt structure are calculated with the quasiparticle self-consistent GW (QSGW) approach with spin-orbit coupling included. The semiconducting gaps and their deformation potentials as well as the effective masses are obtained. The GW...
Barnett, Alex H
2010-01-01
In this paper, we consider band-structure calculations governed by the Helmholtz or Maxwell equations in piecewise homogeneous periodic materials. Methods based on boundary integral equations are natural in this context, since they discretize the interface alone and can achieve high order accuracy in complicated geometries. In order to handle the quasi-periodic conditions which are imposed on the unit cell, the free-space Green's function is typically replaced by its quasi-periodic cousin. Unfortunately, the quasi-periodic Green's function diverges for families of parameter values that correspond to resonances of the empty unit cell. Here, we bypass this problem by means of a new integral representation that relies on the free-space Green's function alone, adding auxiliary layer potentials on the boundary of the unit cell itself. An important aspect of our method is that by carefully including a few neighboring images, the densities may be kept smooth and convergence rapid. This framework results in an integr...
Wetsel, Grover C., Jr.
1978-01-01
Calculates the energy-band structure of noninteracting electrons in a one-dimensional crystal using exact and approximate methods for a rectangular-well atomic potential. A comparison of the two solutions as a function of potential-well depth and ratio of lattice spacing to well width is presented. (Author/GA)
Energy Technology Data Exchange (ETDEWEB)
Korshunov, Maxim M. [L.V. Kirensky Institute of Physics, Siberian Branch of RAS, Akademgorodok, 660036 Krasnoyarsk (Russian Federation); Max-Planck-Institut fuer Physik komplexer Systeme, Noethnitzer Str. 38, D-01187 Dresden (Germany)], E-mail: maxim@mpipks-dresden.mpg.de; Ovchinnikov, Sergey G. [Max-Planck-Institut fuer Physik komplexer Systeme, Noethnitzer Str. 38, D-01187 Dresden (Germany)
2007-09-01
Mean-field theory of the non-superconducting phase of the high-T{sub c} cuprates is formulated within the effective t-t'-t''-J model with three-site correlated hoppings. This model with the ab initio calculated parameters results from the LDA + GTB method. The static spin and kinematical correlation functions beyond Hubbard I approximation are calculated self-consistently taking into account hoppings to the first, the second, and the third neighboring sites, as well as the three-site correlated hoppings. The obtained Fermi surface evolves from hole-pockets at low-doping to large hole-type Fermi surface at higher doping concentrations. Calculated doping dependence of the nodal Fermi velocity, the effective mass and the chemical potential shift are in good agreement with experimental data.
High-energy band structure of gold
DEFF Research Database (Denmark)
Christensen, N. Egede
1976-01-01
The band structure of gold for energies far above the Fermi level has been calculated using the relativistic augmented-plane-wave method. The calculated f-band edge (Γ6-) lies 15.6 eV above the Fermi level is agreement with recent photoemission work. The band model is applied to interpret...
Energy Technology Data Exchange (ETDEWEB)
Su Xiaoxing, E-mail: xxsu@bjtu.edu.c [School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044 (China); Li Jianbao; Wang Yuesheng [Institute of Engineering Mechanics, Beijing Jiaotong University, Beijing 100044 (China)
2010-05-15
If the energy bands of a phononic crystal are calculated by the finite difference time domain (FDTD) method combined with the fast Fourier transform (FFT), good estimation of the eigenfrequencies can only be ensured by the postprocessing of sufficiently long time series generated by a large number of FDTD iterations. In this paper, a postprocessing method based on the high-resolution spectral estimation via the Yule-Walker method is proposed to overcome this difficulty. Numerical simulation results for three-dimensional acoustic and two-dimensional elastic systems show that, compared with the classic FFT-based postprocessing method, the proposed method can give much better estimation of the eigenfrequencies when the FDTD is run with relatively few iterations.
Vaitheeswaran, G.; Kanchana, V.; Zhang, Xinxin; Ma, Yanming; Svane, A.; Christensen, N. E.
2016-08-01
A detailed study of the high-pressure structural properties, lattice dynamics and band structures of perovskite structured fluorides KZnF3, CsCaF3 and BaLiF3 has been carried out by means of density functional theory. The calculated structural properties including elastic constants and equation of state agree well with available experimental information. The phonon dispersion curves are in good agreement with available experimental inelastic neutron scattering data. The electronic structures of these fluorides have been calculated using the quasi particle self-consistent GW approximation. The GW calculations reveal that all the fluorides studied are wide band gap insulators, and the band gaps are significantly larger than those obtained by the standard local density approximation, thus emphasizing the importance of quasi particle corrections in perovskite fluorides.
Vaitheeswaran, G; Kanchana, V; Zhang, Xinxin; Ma, Yanming; Svane, A; Christensen, N E
2016-08-10
A detailed study of the high-pressure structural properties, lattice dynamics and band structures of perovskite structured fluorides KZnF3, CsCaF3 and BaLiF3 has been carried out by means of density functional theory. The calculated structural properties including elastic constants and equation of state agree well with available experimental information. The phonon dispersion curves are in good agreement with available experimental inelastic neutron scattering data. The electronic structures of these fluorides have been calculated using the quasi particle self-consistent [Formula: see text] approximation. The [Formula: see text] calculations reveal that all the fluorides studied are wide band gap insulators, and the band gaps are significantly larger than those obtained by the standard local density approximation, thus emphasizing the importance of quasi particle corrections in perovskite fluorides. PMID:27300494
Photonic band gap structure simulator
Chen, Chiping; Shapiro, Michael A.; Smirnova, Evgenya I.; Temkin, Richard J.; Sirigiri, Jagadishwar R.
2006-10-03
A system and method for designing photonic band gap structures. The system and method provide a user with the capability to produce a model of a two-dimensional array of conductors corresponding to a unit cell. The model involves a linear equation. Boundary conditions representative of conditions at the boundary of the unit cell are applied to a solution of the Helmholtz equation defined for the unit cell. The linear equation can be approximated by a Hermitian matrix. An eigenvalue of the Helmholtz equation is calculated. One computation approach involves calculating finite differences. The model can include a symmetry element, such as a center of inversion, a rotation axis, and a mirror plane. A graphical user interface is provided for the user's convenience. A display is provided to display to a user the calculated eigenvalue, corresponding to a photonic energy level in the Brilloin zone of the unit cell.
Gerosa, Matteo; Bottani, Carlo Enrico; Caramella, Lucia; Onida, Giovanni; Di Valentin, Cristiana; Pacchioni, Gianfranco
2015-04-01
We investigate band gaps, equilibrium structures, and phase stabilities of several bulk polymorphs of wide-gap oxide semiconductors ZnO, TiO2,ZrO2, and WO3. We are particularly concerned with assessing the performance of hybrid functionals built with the fraction of Hartree-Fock exact exchange obtained from the computed electronic dielectric constant of the material. We provide comparison with more standard density-functional theory and GW methods. We finally analyze the chemical reduction of TiO2 into Ti2O3 , involving a change in oxide stoichiometry. We show that the dielectric-dependent hybrid functional is generally good at reproducing both ground-state (lattice constants, phase stability sequences, and reaction energies) and excited-state (photoemission gaps) properties within a single, fully ab initio framework.
Ochi, Masayuki; Sodeyama, Keitaro; Tsuneyuki, Shinji
2014-02-21
Based on the random-phase approximation and the transcorrelated (TC) method, we optimize the Jastrow factor together with one-electron orbitals in the Slater determinant in the correlated wave function with a new scheme for periodic systems. The TC method is one of the promising wave function theories for first-principles electronic structure calculation, where the many-body wave function is approximated as a product of a Slater determinant and a Jastrow factor, and the Hamiltonian is similarity-transformed by the Jastrow factor. Using this similarity-transformed Hamiltonian, we can optimize the one-electron orbitals without evaluating 3N-dimensional integrations for the N-electron system. In contrast, optimization of the Jastrow factor within the framework of the TC method is computationally much more expensive and has not been performed for solid-state calculations before. In this study, we also benefit from the similarity-transformation in optimizing the Jastrow factor. Our optimization scheme is tested in applications to some solids from narrow-gap semiconductors to wide-gap insulators, and it is verified that the band gap of a wide-gap insulator and the lattice constants of some solids are improved by this optimization with reasonable computational cost. PMID:24559343
Microstrip microwave band gap structures
Indian Academy of Sciences (India)
V Subramanian
2008-04-01
Microwave band gap structures exhibit certain stop band characteristics based on the periodicity, impedance contrast and effective refractive index contrast. These structures though formed in one-, two- and three-dimensional periodicity, are huge in size. In this paper, microstrip-based microwave band gap structures are formed by removing the substrate material in a periodic manner. This paper also demonstrates that these structures can serve as a non-destructive characterization tool for materials, a duplexor and frequency selective coupler. The paper presents both experimental results and theoretical simulation based on a commercially available finite element methodology for comparison.
One-Dimensional Anisotropic Band Gap Structure
Institute of Scientific and Technical Information of China (English)
无
2000-01-01
The band gap structure of one-dimensional anisotropic photonic crystal has been studied by means of the transfer matrix formalism. From the analytic expressions and numeric calculations we see some general characteristics of the band gap structure of anisotropic photonic crystals, each band separates into two branches and the two branches react to polarization sensitively. In the practical case of oblique incidence, gaps move towards high frequency when the angle of incidence increases. Under some special conditions, the two branches become degenerate again.
Relativistic Band Calculation and the Optical Properties of Gold
DEFF Research Database (Denmark)
Christensen, N Egede; Seraphin, B. O.
1971-01-01
The energy band structure of gold is calculated by the relativistic augmented-plane-wave (RAPW) method. A nonrelativistic calculation is also presented, and a comparison between this and the RAPW results demonstrates that the shifts and splittings due to relativistic effects are of the same order...... of magnitude as the gaps (approximately 1 eV). Various integrated functions, density of states, joint density of states, and energy distributions of joint density of states are derived from the RAPW calculation. These functions are used in an interpretation of photoemission and static reflectance measurements....... It is shown that the photoemission results are extremely well described in terms of a model assuming all transitions to be direct whereas a nondirect model fails. The ε2 profile calculated in a crude model assuming constant matrix elements matches well the corresponding experimental results. The calculated...
Quasiparticle Band Structure of BaS
Institute of Scientific and Technical Information of China (English)
LU Tie-Yu; CHEN De-Yan; HUANG Mei-Chun
2006-01-01
@@ We calculate the band structure of BaS using the local density approximation and the GW approximation (GWA),i.e. in combination of the Green function G and the screened Coulomb interaction W. The Ba 4d states are treated as valence states. We find that BaS is a direct band-gap semiconductor. The result shows that the GWA band gap (Eg-Gw = 3.921 eV) agrees excellently with the experimental result (Eg-EXPT = 3.88 eV or 3.9eV).
Electronic band structure of beryllium oxide
Sashin, V A; Kheifets, A S; Ford, M J
2003-01-01
The energy-momentum resolved valence band structure of beryllium oxide has been measured by electron momentum spectroscopy (EMS). Band dispersions, bandwidths and intervalence bandgap, electron momentum density (EMD) and density of occupied states have been extracted from the EMS data. The experimental results are compared with band structure calculations performed within the full potential linear muffin-tin orbital approximation. Our experimental bandwidths of 2.1 +- 0.2 and 4.8 +- 0.3 eV for the oxygen s and p bands, respectively, are in accord with theoretical predictions, as is the s-band EMD after background subtraction. Contrary to the calculations, however, the measured p-band EMD shows large intensity at the GAMMA point. The measured full valence bandwidth of 19.4 +- 0.3 eV is at least 1.4 eV larger than the theory. The experiment also finds a significantly higher value for the p-to-s-band EMD ratio in a broad momentum range compared to the theory.
Languages for structural calculations
International Nuclear Information System (INIS)
The differences between human and computing languages are recalled. It is argued that they are to some extent structured in antagonistic ways. Languages in structural calculation, in the past, present, and future, are considered. The contribution of artificial intelligence is stressed
D'Yachkov, P. N.; Makaev, D. V.
2007-11-01
Every carbon single-walled nanotube (SWNT) can be generated by first mapping only two nearest-neighbor C atoms onto a surface of a cylinder and then using the rotational and helical symmetry operators to determine the remainder of the tubule [C. T. White , Phys. Rev. B 47, 5485 (1993)]. With account of these symmetries, we developed a symmetry-adapted version of a linear augmented cylindrical wave method. In this case, the cells contain only two carbon atoms, and the ab initio theory becomes applicable to any SWNT independent of the number of atoms in a translational unit cell. The approximations are made in the sense of muffin-tin (MT) potentials and local-density-functional theory only. An electronic potential is suggested to be spherically symmetrical in the regions of atoms and constant in an interspherical region up to the two essentially impenetrable cylinder-shaped potential barriers. To construct the basis wave functions, the solutions of the Schrödinger equation for the interspherical and MT regions of the tubule were sewn together using a theorem of addition for cylindrical functions, the resulting basis functions being continuous and differentiable anywhere in the system. With account of analytical equations for these functions, the overlap and Hamiltonian integrals are calculated, which permits determination of electronic structure of nanotube. We have calculated the total band structures and densities of states of the chiral and achiral, semiconducting, semimetallic, and metallic carbon SWNTs (13, 0), (12, 2), (11, 3), (10, 5), (9, 6), (8, 7), (7, 7), (12, 4), and (100, 99) containing up to the 118 804 atoms per translational unit cell. Even for the (100, 99) system with huge unit cell, the band structure can be easily calculated and the results can be presented in the standard form of four curves for the valence band plus one curve for the low-energy states of conduction band. About 150 functions produce convergence of the band structures better then
紧束缚近似方法在计算石墨烯能带中的应用%Application of the Tight-binding Method in Calculating Graphene Band Structure
Institute of Scientific and Technical Information of China (English)
施仲诚; 房鸿
2011-01-01
通过引入紧束缚近似理论,使用Matlab计算了石墨烯的能带和π能带图.结果表明,考虑最近邻原子影响,在K-T-M-K方向的全能带图中,观察到了能带的简并特性及能带间的跳跃,与其他方法(如第一原理)相符.在正交基矢下,π能带(价带和导带)具有完全的对称性,加入轨道重叠后(即非正交基矢),对称性被破坏,表现为价带靠近费米面,导带远离费米面,从能量的位移上可以发现,远离比靠近的趋势更为明显.%In this paper,the band structure and the rc-band dispersion of graphene is are calculated by means of the nearest neighbor atom tight - binding method. The results show that in the K-P-M-K direction,the properties of the band structure are in agreement with what is calculated by the ab intio method, and the degeneracy and hopping phenomenon are observed. In the framework of orthogonal basis,the ;r-band structure is symmetric, but the addition of the orbital overlap breaks the symmetry, which means that the valence band goes close to the Fermi surface while the conduction band goes away from the Fermi surface. It can be observed from the energy shift that the latter tendency is more obvious than the former.
High spin band structure in 139Nd
Institute of Scientific and Technical Information of China (English)
XU Qiang; ZHU Sheng-Jiang; CHE Xing-Lai; DING Huai-Bo; GU Long; ZHU Li-Hua; WU Xiao-Guang; LIU Ying; HE Chuang-Ye; LI Li-Hua; PAN Bo; HAO Xin; LI Guang-Sheng
2009-01-01
High-spin states in 139Nd nucleus have been reinvestigated with the reaction 128Te (16O, 5n) at a beam energy of 90 MeV. The level scheme has been expanded with spin up to 47/2 h. At the low spin states,the yrast collective structure built on the vh(-1)(11/2) multiplet shows a transitional shape with γ≈32° according to calculations of the triaxial rotor-plus-particle model. Three collective oblate bands with γ～-60° at the high spin states were identified for the first time. A band crossing is observed around hw ～0.4 MeV in one oblate band based on the 25/2- level.
Energy Technology Data Exchange (ETDEWEB)
Schleife, A; Bechstedt, F
2012-02-15
Many-body perturbation theory is applied to compute the quasiparticle electronic structures and the optical-absorption spectra (including excitonic effects) for several transparent conducting oxides. We discuss HSE+G{sub 0}W{sub 0} results for band structures, fundamental band gaps, and effective electron masses of MgO, ZnO, CdO, SnO{sub 2}, SnO, In{sub 2}O{sub 3}, and SiO{sub 2}. The Bethe-Salpeter equation is solved to account for excitonic effects in the calculation of the frequency-dependent absorption coefficients. We show that the HSE+G{sub 0}W{sub 0} approach and the solution of the Bethe-Salpeter equation are very well-suited to describe the electronic structure and the optical properties of various transparent conducting oxides in good agreement with experiment.
The complex band structure for armchair graphene nanoribbons
Institute of Scientific and Technical Information of China (English)
Zhang Liu-Jun; Xia Tong-Sheng
2010-01-01
Using a tight binding transfer matrix method, we calculate the complex band structure of armchair graphene nanoribbons. The real part of the complex band structure calculated by the transfer matrix method fits well with the bulk band structure calculated by a Hermitian matrix. The complex band structure gives extra information on carrier's decay behaviour. The imaginary loop connects the conduction and valence band, and can profoundly affect the characteristics of nanoscale electronic device made with graphene nanoribbons. In this work, the complex band structure calculation includes not only the first nearest neighbour interaction, but also the effects of edge bond relaxation and the third nearest neighbour interaction. The band gap is classified into three classes. Due to the edge bond relaxation and the third nearest neighbour interaction term, it opens a band gap for N= 3M-1. The band gap is almost unchanged for N = 3M + 1, but decreased for N = 3M. The maximum imaginary wave vector length provides additional information about the electrical characteristics of graphene nmaoribbons, and is also classified into three classes.
Elucidating the stop bands of structurally colored systems through recursion
Amir, Ariel
2012-01-01
Interference phenomena are the source of some of the spectacular colors of animals and plants in nature. In some of these systems, the physical structure consists of an ordered array of layers with alternating high and low refractive indices. This periodicity leads to an optical band structure that is analogous to the electronic band structure encountered in semiconductor physics; namely, specific bands of wavelengths (the stop bands) are perfectly reflected. Here, we present a minimal model for optical band structure in a periodic multilayer and solve it using recursion relations. We present experimental data for various beetles, whose optical structure resembles the proposed model. The stop bands emerge in the limit of an infinite number of layers by finding the fixed point of the recursive relations. In order for these to converge, an infinitesimal amount of absorption needs to be present, reminiscent of the regularization procedures commonly used in physics calculations. Thus, using only the phenomenon of...
Band Structure Characteristics of Nacreous Composite Materials with Various Defects
Yin, J.; Zhang, S.; Zhang, H. W.; Chen, B. S.
2016-06-01
Nacreous composite materials have excellent mechanical properties, such as high strength, high toughness, and wide phononic band gap. In order to research band structure characteristics of nacreous composite materials with various defects, supercell models with the Brick-and-Mortar microstructure are considered. An efficient multi-level substructure algorithm is employed to discuss the band structure. Furthermore, two common systems with point and line defects and varied material parameters are discussed. In addition, band structures concerning straight and deflected crack defects are calculated by changing the shear modulus of the mortar. Finally, the sensitivity of band structures to the random material distribution is presented by considering different volume ratios of the brick. The results reveal that the first band gap of a nacreous composite material is insensitive to defects under certain conditions. It will be of great value to the design and synthesis of new nacreous composite materials for better dynamic properties.
Structure of negative parity yrast bands in odd mass 125-131Ce nuclei
Indian Academy of Sciences (India)
Arun Bharti; Suram Singh; S K Khosa
2010-04-01
The negative parity yrast bands of neutron-deficient 125-131Ce nuclei are studied by using the projected shell model approach. Energy levels, transition energies and (1)/(2) ratios are calculated and compared with the available experimental data. The calculations reproduce the band-head spins of negative parity yrast bands and indicate the multi-quasiparticle structure for these bands.
Energy Technology Data Exchange (ETDEWEB)
Lavrentyev, A.A.; Gabrelian, B.V.; Vorzhev, V.B.; Nikiforov, I.Ya. [Department of Physics, Don State Technical University, Gagarin Sq. 1, Rostov-on-Don (Russian Federation); Khyzhun, O.Yu. [Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, UA-03142 Kyiv (Ukraine)], E-mail: khyzhun@ipms.kiev.ua
2009-03-20
To investigate the influence of substitution of carbon atoms for nitrogen atoms in the cubic TaC{sub x}N{sub 1-x} carbonitrides, total and partial densities of states were calculated for TaC, TaC{sub 0.5}N{sub 0.5} and TaN compounds (NaCl structure) using the self-consistent cluster (with the FEFF8 code) and ab initio band-structure augmented plane wave + local orbitals (APW + LO) methods. In the present work a rather good agreement of the theoretical FEFF8 and APW + LO data for electronic properties of the TaC{sub x}N{sub 1-x} system under consideration was obtained. The results indicate that a strong hybridization of the Ta 5d- and C(N) 2p-like states is characteristic for the valence band of the TaC{sub x}N{sub 1-x} carbonitrides. When going from TaC to TaN through the TaC{sub 0.5}N{sub 0.5} carbonitride, the main maxima of curves representing total and partial Ta 5d densities of states shift in the direction opposite to the position of the Fermi level. In the above sequence of compounds, an increase of occupation of the near-Fermi sub-band formed by contributions of Ta 5d(t{sub 2g}) states has been detected. The theoretical FEFF8 and APW + LO results for the electronic structure of the TaC{sub x}N{sub 1-x} carbonitrides were found to be in excellent agreement with the experimental data derived in the present work employing X-ray photoelectron, emission and absorption spectroscopy methods for cubic TaC{sub 0.98}, TaC{sub 0.52}N{sub 0.49} and TaN{sub 0.97} compounds.
Electronic band structures of binary skutterudites
Energy Technology Data Exchange (ETDEWEB)
Khan, Banaras [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Aliabad, H.A. Rahnamaye [Department of Physics, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Saifullah [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Jalali-Asadabadi, S. [Department of Physics, Faculty of Science, University of Isfahan (UI), 81744 Isfahan (Iran, Islamic Republic of); Khan, Imad [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Ahmad, Iftikhar, E-mail: ahma5532@gmail.com [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan)
2015-10-25
The electronic properties of complex binary skutterudites, MX{sub 3} (M = Co, Rh, Ir; X = P, As, Sb) are explored, using various density functional theory (DFT) based theoretical approaches including Green's Function (GW) as well as regular and non-regular Tran Blaha modified Becke Jhonson (TB-mBJ) methods. The wide range of calculated bandgap values for each compound of this skutterudites family confirm that they are theoretically as challenging as their experimental studies. The computationally expensive GW method, which is generally assume to be efficient in the reproduction of the experimental bandgaps, is also not very successful in the calculation of bandgaps. In this article, the issue of the theoretical bandgaps of these compounds is resolved by reproducing the accurate experimental bandgaps, using the recently developed non-regular TB-mBJ approach, based on DFT. The effectiveness of this technique is due to the fact that a large volume of the binary skutterudite crystal is empty and hence quite large proportion of electrons lie outside of the atomic spheres, where unlike LDA and GGA which are poor in the treatment of these electrons, this technique properly treats these electrons and hence reproduces the clear electronic picture of these compounds. - Highlights: • Theoretical and experimental electronic band structures of binary skutterudites are reviewed. • The literature reveals that none of the existing theoretical results are consistent with the experiments. • GW, regular and non-regular TB-mBJ methods are used to reproduce the correct results. • The GW and regular TB-mBJ results are better than the available results in literature. • However, non-regular TB-mBJ reproduces the correct experimental band structures.
Fujisawa, Jun-ichi; Hanaya, Minoru
2016-06-01
Interfacial charge-transfer (ICT) transitions between inorganic semiconductors and π-conjugated molecules allow direct charge separation without loss of energy. This feature is potentially useful for efficient photovoltaic conversions. Charge-transferred complexes of TiO2 nanoparticles with 7,7,8,8-tetracyanoquinodimethane (TCNQ) and its analogues (TCNX) show strong ICT absorption in the visible region. The ICT band was reported to be significantly red-shifted with extension of the π-conjugated system of TCNX. In order to clarify the mechanism of the red-shift, in this work, we systematically study electronic structures of the TiO2-TCNX surface complexes (TCNX; TCNE, TCNQ, 2,6-TCNAQ) by ionization potential measurements and density functional theory (DFT) calculations.
Electronic band structure and photoemission: A review and projection
International Nuclear Information System (INIS)
A brief review of electronic-structure calculations in solids, as a means of interpreting photoemission spectra, is presented. The calculations are, in general, of three types: ordinary one-electron-like band structures, which apply to bulk solids and are the basis of all other calculations; surface modified calculations, which take into account, self-consistently if at all possible, the presence of a vacuum-solid interface and of the electronic modifications caused thereby; and many-body calculations, which go beyond average-field approximations and consider dynamic rearrangement effects caused by electron-electron correlations during the photoemission process. 44 refs
DEFF Research Database (Denmark)
Michiardi, Matteo; Aguilera, Irene; Bianchi, Marco;
2014-01-01
The bulk band structure of Bi2Te3 has been determined by angle-resolved photoemission spectroscopy and compared to first-principles calculations. We have performed calculations using the local density approximation (LDA) of density functional theory and the one-shot GW approximation within the all......-electron full-potential linearized augmented-plane-wave (FLAPW) formalism, fully taking into account spin-orbit coupling. Quasiparticle effects produce significant changes in the band structure of Bi2Te3 when compared to LDA. Experimental and calculated results are compared in the spectral regions where...... distinct differences between the LDA and GW results are present. Overall a superior agreement with GW is found, highlighting the importance of many-body effects in the band structure of this family of topological insulators....
Hubbard-U band-structure methods
DEFF Research Database (Denmark)
Albers, R.C.; Christensen, Niels Egede; Svane, Axel
2009-01-01
are inconsistent with what the calculations actually do. Although many of these calculations are often treated as essentially first-principles calculations, in fact, we argue that they should be viewed from an entirely different point of view, namely, as based on phenomenological many-body corrections to band......The last decade has seen a large increase in the number of electronic-structure calculations that involve adding a Hubbard term to the local-density approximation band-structure Hamiltonian. The Hubbard term is then determined either at the mean-field level or with sophisticated many......-body techniques such as using dynamical mean-field theory. We review the physics underlying these approaches and discuss their strengths and weaknesses in terms of the larger issues of electronic structure that they involve. In particular, we argue that the common assumptions made to justify such calculations...
Relativistic calculations of atomic structure
Fricke, Burkhard
1984-01-01
A review of relativistic atomic structure calculations is given with a emphasis on the Multiconfigurational-Dirac-Fock method. Its problems and deficiencies are discussed together with the contributions which go beyond the Dirac-Fock procedure.
Energy Technology Data Exchange (ETDEWEB)
Ribeiro, M. [Centro de Pesquisas Avancadas Wernher von Braun, Av. Alice de Castro P.N. Mattosinho 301, CEP 13098-392 Campinas, SP (Brazil); Ferreira, L.G. [Departamento de Fisica dos Materiais e Mecanica, Instituto de Fisica, Universidade de Sao Paulo, 05315-970 Sao Paulo, SP (Brazil); Fonseca, L.R.C. [Center for Semiconductor Components, State University of Campinas, R. Pandia Calogeras 90, 13083-870 Campinas, SP (Brazil); Ramprasad, R. [Department of Chemical, Materials and Biomolecular Engineering, Institute of Materials Science, University of Connecticut, 97 North Eagleville Road, Storrs, CT 06269 (United States)
2012-09-20
We performed ab initio calculations of the electronic structures of bulk CdSe and CdTe, and their interface band alignments on the CdSe in-plane lattice parameters. For this, we employed the LDA-1/2 self-energy correction scheme to obtain corrected band gaps and band offsets. Our calculations include the spin-orbit effects for the bulk cases, which have shown to be of importance for the equilibrium systems and are possibly degraded in these strained semiconductors. Therefore, the SO showed reduced importance for the band alignment of this particular system. Moreover, the electronic structure calculated along the transition region across the CdSe/CdTe interface shows an interesting non-monotonic variation of the band gap in the range 0.8-1.8 eV, which may enhance the absorption of light for corresponding frequencies at the interface between these two materials in photovoltaic applications.
Phononic band gap structures as optimal designs
DEFF Research Database (Denmark)
Jensen, Jakob Søndergaard; Sigmund, Ole
2003-01-01
In this paper we use topology optimization to design phononic band gap structures. We consider 2D structures subjected to periodic loading and obtain the distribution of two materials with high contrast in material properties that gives the minimal vibrational response of the structure. Both in-plane...... and out-of-plane vibrations are considered....
Automated effective band structures for defective and mismatched supercells.
Brommer, Peter; Quigley, David
2014-12-01
In plane-wave density functional theory codes, defects and incommensurate structures are usually represented in supercells. However, interpretation of E versus k band structures is most effective within the primitive cell, where comparison to ideal structures and spectroscopy experiments are most natural. Popescu and Zunger recently described a method to derive effective band structures (EBS) from supercell calculations in the context of random alloys. In this paper, we present bs_sc2pc, an implementation of this method in the CASTEP code, which generates an EBS using the structural data of the supercell and the underlying primitive cell with symmetry considerations handled automatically. We demonstrate the functionality of our implementation in three test cases illustrating the efficacy of this scheme for capturing the effect of vacancies, substitutions and lattice mismatch on effective primitive cell band structures. PMID:25388668
Band Structure and Fermi-Surface Properties of Ordered beta-Brass
DEFF Research Database (Denmark)
Skriver, Hans Lomholt; Christensen, N. E.
1973-01-01
The band structure of ordered β-brass (β′-CuZn) has been calculated throughout the Brillouin zone by the augmented-plane-wave method. The present band model differs from previous calculations with respect to the position and width of the Cu 3d band. The derived dielectric function ε2(ω) and the p...
Development of S-band accelerating structure
International Nuclear Information System (INIS)
In Pohang Accelerator Laboratory (PAL) in Korea construction of XFEL (X-ray Free electron Lazar) institution is under construction aiming at the completion in 2014. Energy 10 GeV of the linac part of this institution and main frequency are planned in S-band (2856 MHz), and about 178 S-band 3m accelerating structures are due to be used for this linac. The oscillation of an X-ray laser requires very low emittance electron beam. On the other hand, since the accelerating structure which accelerates an electron beam has a feed port of microwave (iris), the electromagnetic field asymmetry of the microwave feeding device called coupler worsens the emittance of an electron beam. MHI manufactured two kinds of S-band accelerating structures with which the electromagnetic field asymmetry of coupler cavity was compensated for PALXFEL linac. We report these accelerating structures. (author)
First-principle band calculation of ruthenium for various phases
Watanabe, S; Kai, T; Shiiki, K
2000-01-01
The total energies and the magnetic moments of Ru for HCP, BCC, FCC, BCT structures were calculated by using a first-principle full-potential linearized augmented plane-wave (FLAPW) method based on the generalized gradient approximation (GGA). HCP has the lowest energy among the structures calculated, which agrees with the experimental result that HCP is the equilibrium phase of Ru. The total energy of BCT Ru has the local minimum at c/a=sq root 2 (FCC) with a=5.13 au, c=7.25 au and c/a=0.83 with a=6.15 au, c=5.11 au. It is pointed out that these phases are possibly metastable. The BCC structure, which corresponds to BCT with a=c=5.78 au, is unstable because it is at a saddle point of the total energy. BCT Ru of c/a<1 has a magnetic moment at the stable volume.
Pashkevich, Yu.; Gnezdilov, V.; Lemmens, P.; Shevtsova, T.; Gusev, A.; Lamonova, K.; Wulferding, D.; Gnatchenko, S.; Pomjakushina, E.; Conder, K.
2016-06-01
We report Raman light scattering in the phase separated superconducting single crystal Rb0.77Fe1.61Se2 with Tc = 32 K over a wide temperature region 3-500 K. The observed phonon lines from the majority vacancy ordered Rb2Fe4Se5 (245) antiferromagnetic phase with TN = 525 K demonstrate modest anomalies in the frequency, intensity and halfwidth at the superconductive phase transition. We identify phonon lines from the minority compressed RbδFe2Se2 (122) conductive phase. The superconducting gap with d x 2 - y 2 symmetry has been detected in our spectra. In the range 0-600 cm-1 we observe a weak but highly polarized B1g-type background which becomes well-structured upon cooling. A possible magnetic or multiorbital origin of this background is discussed. We argue that the phase separation in M0.8+xFe1.6+ySe2 is of pure magnetic origin. It occurs below the Néel temperature when the magnetic moment of iron reaches a critical value. We state that there is a spacer between the majority 245 and minority 122 phases. Using ab initio spin-polarized band structure calculations we demonstrate that the compressed vacancy ordered Rb2Fe4Se5 phase can be conductive and therefore may serve as a protective interface spacer between the purely metallic RbδFe2Se2 phase and the insulating Rb2Fe4Se5 phase providing percolative Josephson-junction like superconductivity all throughout of Rb0.8+xFe1.6+ySe2. Our lattice dynamics calculations show significant differences in the phonon spectra of the conductive and insulating Rb2Fe4Se5 phases.
Maximizing band gaps in plate structures
DEFF Research Database (Denmark)
Halkjær, Søren; Sigmund, Ole; Jensen, Jakob Søndergaard
2006-01-01
Band gaps, i.e., frequency ranges in which waves cannot propagate, can be found in elastic structures for which there is a certain periodic modulation of the material properties or structure. In this paper, we maximize the band gap size for bending waves in a Mindlin plate. We analyze an infinite...... periodic plate using Bloch theory, which conveniently reduces the maximization problem to that of a single base cell. Secondly, we construct a finite periodic plate using a number of the optimized base cells in a postprocessed version. The dynamic properties of the finite plate are investigated...
Band structures in near spherical {sup 138}Ce
Energy Technology Data Exchange (ETDEWEB)
Bhattacharjee, T. [Variable Energy Cyclotron Centre, Kolkata 700 064 (India)], E-mail: btumpa@veccal.ernet.in; Chanda, S. [Variable Energy Cyclotron Centre, Kolkata 700 064 (India); Fakir Chand College, Diamond Harbour, West Bengal (India); Bhattacharyya, S.; Basu, S.K. [Variable Energy Cyclotron Centre, Kolkata 700 064 (India); Bhowmik, R.K.; Das, J.J. [Inter University Accelerator Centre, New Delhi 110 067 (India); Pramanik, U. Datta [Saha Institute of Nuclear Physics, Kolkata 700 064 (India); Ghugre, S.S. [UGC-DAE Consortium for Scientific Research, Kolkata Centre, Kolkata 700 098 (India); Madhavan, N. [Inter University Accelerator Centre, New Delhi 110 067 (India); Mukherjee, A.; Mukherjee, G. [Variable Energy Cyclotron Centre, Kolkata 700 064 (India); Muralithar, S.; Singh, R.P. [Inter University Accelerator Centre, New Delhi 110 067 (India)
2009-06-15
The high spin states of N=80{sup 138}Ce have been populated in the fusion evaporation reaction {sup 130}Te({sup 12}C, 4n){sup 138}Ce at E{sub beam}=65 MeV. The {gamma} transitions belonging to various band structures were detected and characterized using an array of five Clover Germanium detectors. The level scheme has been established up to a maximum spin and excitation energy of 23h and 9511.3 keV, respectively, by including 53 new transitions. The negative parity {delta}I=1 band, developed on the 6536.3 keV 15{sup -} level, has been conjectured to be a magnetic rotation band following a semiclassical analysis and comparing the systematics of similar bands in the neighboring nuclei. The said band is proposed to have a four quasiparticle configuration of [{pi}g{sub 7/2}h{sub (11)/2}]x[{nu}h{sub (11)/2}]{sup -2}. Other band structures are interpreted in terms of multi-quasiparticle configurations, based on Total Routhian Surface (TRS) calculations. For the low and medium spin states, a shell model calculation using a realistic two body interaction has been performed using the code OXBASH.
Complex band structure of topological insulator Bi2Se3.
Betancourt, J; Li, S; Dang, X; Burton, J D; Tsymbal, E Y; Velev, J P
2016-10-01
Topological insulators are very interesting from a fundamental point of view, and their unique properties may be useful for electronic and spintronic device applications. From the point of view of applications it is important to understand the decay behavior of carriers injected in the band gap of the topological insulator, which is determined by its complex band structure (CBS). Using first-principles calculations, we investigate the dispersion and symmetry of the complex bands of Bi2Se3 family of three-dimensional topological insulators. We compare the CBS of a band insulator and a topological insulator and follow the CBS evolution in both when the spin-orbit interaction is turned on. We find significant differences in the CBS linked to the topological band structure. In particular, our results demonstrate that the evanescent states in Bi2Se3 are non-trivially complex, i.e. contain both the real and imaginary contributions. This explains quantitatively the oscillatory behavior of the band gap obtained from Bi2Se3 (0 0 0 1) slab calculations. PMID:27485021
Band structure engineering in organic semiconductors
Schwarze, Martin; Tress, Wolfgang; Beyer, Beatrice; Gao, Feng; Scholz, Reinhard; Poelking, Carl; Ortstein, Katrin; Günther, Alrun A.; Kasemann, Daniel; Andrienko, Denis; Leo, Karl
2016-06-01
A key breakthrough in modern electronics was the introduction of band structure engineering, the design of almost arbitrary electronic potential structures by alloying different semiconductors to continuously tune the band gap and band-edge energies. Implementation of this approach in organic semiconductors has been hindered by strong localization of the electronic states in these materials. We show that the influence of so far largely ignored long-range Coulomb interactions provides a workaround. Photoelectron spectroscopy confirms that the ionization energies of crystalline organic semiconductors can be continuously tuned over a wide range by blending them with their halogenated derivatives. Correspondingly, the photovoltaic gap and open-circuit voltage of organic solar cells can be continuously tuned by the blending ratio of these donors.
Band structure engineering in organic semiconductors.
Schwarze, Martin; Tress, Wolfgang; Beyer, Beatrice; Gao, Feng; Scholz, Reinhard; Poelking, Carl; Ortstein, Katrin; Günther, Alrun A; Kasemann, Daniel; Andrienko, Denis; Leo, Karl
2016-06-17
A key breakthrough in modern electronics was the introduction of band structure engineering, the design of almost arbitrary electronic potential structures by alloying different semiconductors to continuously tune the band gap and band-edge energies. Implementation of this approach in organic semiconductors has been hindered by strong localization of the electronic states in these materials. We show that the influence of so far largely ignored long-range Coulomb interactions provides a workaround. Photoelectron spectroscopy confirms that the ionization energies of crystalline organic semiconductors can be continuously tuned over a wide range by blending them with their halogenated derivatives. Correspondingly, the photovoltaic gap and open-circuit voltage of organic solar cells can be continuously tuned by the blending ratio of these donors. PMID:27313043
Design of smooth orthogonal wavelets with beautiful structure from 2-band to 4-band
Institute of Scientific and Technical Information of China (English)
无
2006-01-01
A complete algorithm to design 4-band orthogonal wavelets with beautiful structure from 2-band orthogonal wavelets is presented. For more smoothness, the conception of transfer vanishing moment is introduced by transplanting the requirements of vanishing moment from the 4-band wavelets to the 2-band ones. Consequently, the design of 4-band orthogonal wavelets with P vanishing moments and beautiful structure from 2-band ones with P transfer vanishing moments is completed.
Coupling effect of quantum wells on band structure
International Nuclear Information System (INIS)
The coupling effects of quantum wells on band structure are numerically investigated by using the Matlab programming language. In a one dimensional finite quantum well with the potential barrier V0, the calculation is performed by increasing the number of inserted barriers with the same height Vb, and by, respectively, varying the thickness ratio of separated wells to inserted barriers and the height ratio of Vb to V0. Our calculations show that coupling is strongly influenced by the above parameters of the inserted barriers and wells. When these variables change, the width of the energy bands and gaps can be tuned. Our investigation shows that it is possible for quantum wells to achieve the desired width of the bands and gaps. (paper)
Maris, P; Vary, J P
2014-01-01
The emergence of rotational bands is observed in no-core configuration interaction (NCCI) calculations for the Be isotopes (7<=A<=12), as evidenced by rotational patterns for excitation energies, electromagnetic moments, and electromagnetic transitions. Yrast and low-lying excited bands are found. The results indicate well-developed rotational structure in NCCI calculations, using the JISP16 realistic nucleon-nucleon interaction within finite, computationally-accessible configuration spaces.
Band structure analysis in SiGe nanowires
Energy Technology Data Exchange (ETDEWEB)
Amato, Michele [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy); Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy); Palummo, Maurizia [European Theoretical Spectroscopy Facility (ETSF) (Italy); CNR-INFM-SMC, Dipartimento di Fisica, Universita di Roma, ' Tor Vergata' , via della Ricerca Scientifica 1, 00133 Roma (Italy); Ossicini, Stefano, E-mail: stefano.ossicini@unimore.it [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy) and Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy) and European Theoretical Spectroscopy Facility - ETSF (Italy) and Centro Interdipartimentale ' En and Tech' , Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy)
2012-06-05
One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.
Complex banded structures in directional solidification processes.
Korzhenevskii, A L; Rozas, R E; Horbach, J
2016-01-27
A combination of theory and numerical simulation is used to investigate impurity superstructures that form in rapid directional solidification (RDS) processes in the presence of a temperature gradient and a pulling velocity with an oscillatory component. Based on a capillary wave model, we show that the RDS processes are associated with a rich morphology of banded structures, including frequency locking and the transition to chaos.
Band offset of the ZnO/Cu2O heterojunction from ab initio calculations
Zemzemi, M.; Alaya, S.
2013-12-01
The ZnO/Cu2O system has known a recent revival of interest in solar cells for its potential use as a heterojunction able to highly perform under visible light. In this work, we are interested on the characterization of the interface through nanoscale modelization based on ab initio (Density Functional Theory (DFT), Local Density Approximation (LDA), Generalized Gradient Approximation (GGA-PBE), and Pseudopotential (PP)). This work aims to build a supercell containing a heterojunction ZnO/Cu2O and study the structural properties and the discontinuity of the valence band (band offset) from a semiconductor to another. We built a zinc oxide in the wurtzite structure along the [0 0 0 1] on which we placed the copper oxide in the hexagonal structure (CdI2-type). We choose the method of Van de Walle and Martin to calculate the energy offset. This approach fits well with the DFT. Our calculations of the band offset gave us a value that corresponds to other experimental and theoretical values.
Banded electron structures in the plasmasphere
Energy Technology Data Exchange (ETDEWEB)
Burke, W.J.; Rubin, A.G.; Hardy, D.A.; Holeman, E.G.
1995-05-01
The low-energy plasma analyzer on CRRES has detected significant fluxes of 10-eV to 30-keV electrons trapped on plasmaspheric field lines. On energy versus time spectrograms these electrons appear as banded structures that can span the 2 < L < 6 range of magnetic shells. The authors present an example of banded electron structures, encountered in the nightside plasmasphere during the magnetically quiet January 30, 1991. Empirical analysis suggests that two clouds of low energy electrons were injected from the plasma sheet to L < 4 on January 26 and 27 while the convective electric field was elevated. The energies of electrons in the first cloud were greater than those in the second. DMSP F8 measurements show that after the second injection, the polar cap potential rapidly decreased from >50 to <20 kY. Subsequent encounters with the lower energy cloud on alternating CRRES orbits over the next 2 days showed a progressive, earthward movement of the electrons, inner boundary. Whistler and electron cyclotron harmonic emissions accompanied the most intense manifestations of cloud electrons. The simplest explanation of these measurements is that after initial injection, the AIfven boundary moved Outward, leaving the cloud electrons on closed drift paths. Subsequent fluctuations of the convective electric field penetrated the plasmasphere, transporting cloud elements inward. The magnetic shell distribution of electron temperatures in one of the banded structures suggests that radiative energy losses may be comparable in magnitude to gains due to adiabatic compression.
Band Structure and Optical Properties of Ordered AuCu3
DEFF Research Database (Denmark)
Skriver, Hans Lomholt; Lengkeek, H. P.
1979-01-01
The optical spectra of ordered AuCu3 have been measured at low temperatures by a direct ellipsometric technique. We find several structural elements above the absorption edge as well as in the infrared. The measured spectra are interpreted in terms of the interband absorption calculated from an ab...... initio band structure obtained by the relativistic linear muffin-tin orbitals method. The band calculation reveals that ordered AuCu3 has distinct copper and gold d bands positioned in and hybridizing with an s band common to copper and gold. The calculated state density is found to be in good agreement...
The band-gap enhanced photovoltaic structure
Tessler, Nir
2016-05-01
We critically examine the recently suggested structure that was postulated to potentially add 50% to the photo-conversion efficiency of organic solar cells. We find that the structure could be realized using stepwise increase in the gap as long as the steps are not above 0.1 eV. We also show that the charge extraction is not compromised due to an interplay between the contact's space charge and the energy level modification, which result in a flat energy band at the extracting contact.
Theoretical study on the band structure and optical properties of 4H-SiC
Institute of Scientific and Technical Information of China (English)
Xu Peng-Shou; Xie Chang-Kun; Pan Hai-Bin; Xu Fa-Qiang
2004-01-01
We have studied the band structure and optical properties of 4H-SiC by using a full potential linearized augmented plane waves (FPLAPW) method. The density of states (DOS) and band structure are presented. The imaginary part of the dielectric function has been obtained directly from the band structure calculation. With band gap correction, the real part of the dielectric function has been derived from the imaginary part by the Kramers-Kronig (KK) dispersion relationship. The values of reflectivity for normal incidence as a function of photon energy have also been calculated.We found the theoretical results are in good agreement with the experimental data.
Self-consistent treatment of v-groove quantum wire band structure in no parabolic approximation
Directory of Open Access Journals (Sweden)
Crnjanski Jasna V.
2004-01-01
Full Text Available The self-consistent no parabolic calculation of a V-groove-quantum-wire (VQWR band structure is presented. A comparison with the parabolic flat-band model of VQWR shows that both, the self-consistency and the nonparabolicity shift sub band edges, in some cases even in the opposite directions. These shifts indicate that for an accurate description of inter sub band absorption, both effects have to be taken into the account.
Band structural properties of MoS2 (molybdenite)
International Nuclear Information System (INIS)
Semiconductivity and superconductivity in MoS2 (molybdenite) can be understood in terms of the band structure of MoS2. The band structural properties of MoS2 are presented here. The energy dependence of nsub(eff) and epsilon(infinity)sub(eff) is investigated. Using calculated values of nsub(eff) and epsilon(infinity)sub(eff), the Penn gap has been determined. The value thus obtained is shown to be in good agreement with the reflectivity data and also with the value obtained from the band structure. The Ravindra and Srivastava formula has been shown to give values for the isobaric temperature gradient of Esub(G)[(deltaEsub(G)/deltaT)sub(P)], which are in agreement with the experimental data, and the contribution to (deltaEsub(G)/deltaT)sub(P) due to the electron lattice interaction has been evaluated. In addition, the electronic polarizability has been calculated using a modified Lorentz-Lorenz relation. (author)
From lattice Hamiltonians to tunable band structures by lithographic design
Tadjine, Athmane; Allan, Guy; Delerue, Christophe
2016-08-01
Recently, new materials exhibiting exotic band structures characterized by Dirac cones, nontrivial flat bands, and band crossing points have been proposed on the basis of effective two-dimensional lattice Hamiltonians. Here, we show using atomistic tight-binding calculations that these theoretical predictions could be experimentally realized in the conduction band of superlattices nanolithographed in III-V and II-VI semiconductor ultrathin films. The lithographed patterns consist of periodic lattices of etched cylindrical holes that form potential barriers for the electrons in the quantum well. In the case of honeycomb lattices, the conduction minibands of the resulting artificial graphene host several Dirac cones and nontrivial flat bands. Similar features, but organized in different ways, in energy or in k -space are found in kagome, distorted honeycomb, and Lieb superlattices. Dirac cones extending over tens of meV could be obtained in superlattices with reasonable sizes of the lithographic patterns, for instance in InAs/AlSb heterostructures. Bilayer artificial graphene could be also realized by lithography of a double quantum-well heterostructure. These new materials should be interesting for the experimental exploration of Dirac-based quantum systems, for both fundamental and applied physics.
Global nuclear-structure calculations
Energy Technology Data Exchange (ETDEWEB)
Moeller, P.; Nix, J.R.
1990-04-20
The revival of interest in nuclear ground-state octupole deformations that occurred in the 1980's was stimulated by observations in 1980 of particularly large deviations between calculated and experimental masses in the Ra region, in a global calculation of nuclear ground-state masses. By minimizing the total potential energy with respect to octupole shape degrees of freedom in addition to {epsilon}{sub 2} and {epsilon}{sub 4} used originally, a vastly improved agreement between calculated and experimental masses was obtained. To study the global behavior and interrelationships between other nuclear properties, we calculate nuclear ground-state masses, spins, pairing gaps and {Beta}-decay and half-lives and compare the results to experimental qualities. The calculations are based on the macroscopic-microscopic approach, with the microscopic contributions calculated in a folded-Yukawa single-particle potential.
Global nuclear-structure calculations
International Nuclear Information System (INIS)
The revival of interest in nuclear ground-state octupole deformations that occurred in the 1980's was stimulated by observations in 1980 of particularly large deviations between calculated and experimental masses in the Ra region, in a global calculation of nuclear ground-state masses. By minimizing the total potential energy with respect to octupole shape degrees of freedom in addition to ε2 and ε4 used originally, a vastly improved agreement between calculated and experimental masses was obtained. To study the global behavior and interrelationships between other nuclear properties, we calculate nuclear ground-state masses, spins, pairing gaps and Β-decay and half-lives and compare the results to experimental qualities. The calculations are based on the macroscopic-microscopic approach, with the microscopic contributions calculated in a folded-Yukawa single-particle potential
Photonic band structure of two-dimensional metal/dielectric photonic crystals
International Nuclear Information System (INIS)
An improved plane wave expansion method for the numerical calculation of photonic bands of metal/dielectric photonic crystal (PC) are presented. This method is applied to two-dimensional PCs with frequency-dependent dielectric constants. We obtained the photonic band structure of three kinds of structures: sawtooth, cylinder and hole PCs. The results show that the lowest band-1 is relatively flat, and does not approach zero. Also, there is no complete band-gap that extends throughout the first Brillouin zone for these three structures. However, there are partial band-gaps in different directions in the first Brillouin zone. For the complementary cylinder and hole PCs, their photonic bands are similar except for the lowest three bands; the hole PC’s lowest frequency of band-1 is larger than that of cylinder PC for the configuration R/d = 0.2. (paper)
A Theoretical Structure of High School Concert Band Performance
Bergee, Martin J.
2015-01-01
This study used exploratory (EFA) and confirmatory factor analysis (CFA) to verify a theoretical structure for high school concert band performance and to test that structure for viability, generality, and invariance. A total of 101 university students enrolled in two different bands rated two high school band performances (a "first"…
Calculation of the Energy Band Diagram of a Photoelectrochemical Water Splitting Cell
Cendula, Peter; Tilley, S. David; Girnenez, Sixto; Bisquert, Juan; Schmid, Matthias; Graetzel, Michael; Schumachert, Juergen O.
2014-01-01
A physical model is presented for the semiconductor electrode of a photoelectrochemical cell. The model accounts for the potential drop in the Helmholtz layer and thus enables description of both band edge pinning and unpinning. The model is based on the continuity equations for charge carriers and direct charge transfer from the energy bands to the electrolyte. A quantitative calculation of the position of the energy bands and the variation of the quasi-Fermi levels in the semiconductor with...
Kink Band Instability and Propagation in Layered Structures
Wadee, M.A.; Hunt, G.W.; Peletier, M.A.
2003-01-01
A recent two-dimensional prototype model for the initiation of kink banding in compressed layered structures is extended to embrace the two propagation mechanisms of band broadening and band progression. As well as interlayer friction, overburden pressure and layer bending energy, the characteristic
Dual-band electromagnetic band gap structure for noise isolation in mixed signal SiP
Rotaru, M. D.; Sykulski, J. K.
2010-01-01
A compact dual-band electromagnetic band-gap (EBG) structure is proposed. It is shown through numerical simulation using 3D electromagnetic finite element modelling that by adding a slit to the classical mushroom shape an extra resonance is introduced and thus dual-band EBG structures can be built by cascading these new elements. It is also demonstrated that this novel approach can be used to isolate noise in a system such as a dual band transceiver integrated into a mixed signal system in a ...
Three-dimensional rf structure calculations
International Nuclear Information System (INIS)
The calculation of three-dimensional rf structures is rapidly approaching adolescence, after having been in its infancy for the last four years. This paper will show the kinds of calculations that are currently being performed in the frequency domain and is a companion paper to one in which time-domain calculations are described. 13 refs., 14 figs
Band structure of surface barrier states and resonances
International Nuclear Information System (INIS)
Full text: G. Binnig and H. Rohrer, Nobel Prize Winners for the invention of the Scanning Tunneling Microscope, write in the opening sentence of one of their papers, co-authored with others : 'One of the fundamental problems in surface physics is obtaining knowledge of the electron-metal-surface interaction potential.' Although it is known that the surface barrier has an 'image' asymptotic form and saturates or weakens closer to the crystal surface, the position of the image tail, momentum dependence of the barrier height and saturation closer to the surface have not been agreed upon by different workers and techniques to this day. Ab initio calculations using the density functional approximation produce locations for the position of the image tail which differ by ∼50% depending on whether the exiting or incoming electron is considered part of the crystal or a classical charge interacting with the electron gas. Very low energy electron diffraction (VLEED), k-resolved inverse photoemission spectroscopy (KRIPES) and 2-photon photoemission spectroscopy (2PPE) are sensitive to the barrier but analyses to date have not yielded consistent conclusions. In this work we have used our plane-wave scattering method to calculate the barrier energy band structure for Cu (001) over the whole SBZ to compare with experimental results from KRIPES and 2PPE data as well as the calculation of Smith et al. This calculation used a parameterized nearly-free-electron function to represent the substrate scattering and could only produce states not resonances which occur outside of bulk band gaps and above the barrier height. As well, no inelastic scattering could be included. We show that inelastic scattering, surface restructuring and an extended data-base must be included for definitive conclusions about details of the barrier. Also, our calculation shows above-barrier resonances are strong and should be measured by experimentalists to extract the momentum dependent saturation and
Acoustic band pinning in the phononic crystal plates of anti-symmetric structure
Institute of Scientific and Technical Information of China (English)
Cai Chen; Zhu Xue-Feng; Chen Qian; Yuan Ying; Liang Bin; Cheng Jian-Chun
2011-01-01
Acoustic bands are studied numerically for a Lamb wave propagating in an anti-symmetric structure of a onedimensional periodic plate by using the method of supercell plane-wave expansion.The results show that all the bands are pinned in pairs at the Brillouin zone boundary as long as the anti-symmetry remains and acoustic band gaps (ABGs) only appear between certain bands.In order to reveal the relationship between the band pinning and the anti-symmetry,the method of eigenmode analysis is introduced to calculate the displacement fields of different plate structures.Further,the method of harmony response analysis is employed to calculate the reference spectra to verify the accuracy of numerical calculations of acoustic band map,and both the locations and widths of ABGs in the acoustic band map are in good agreement with those of the reference spectra.The investigations show that the pinning effect is very sensitive to the anti-symmetry of periodic plates,and by introducing different types of breakages,more ABGs or narrow pass bands will appear,which is meaningful in band gap engineering.
Photonic band gaps in materials with triply periodic surfaces and related tubular structures
Michielsen, K; Kole, JS
2003-01-01
We calculate the photonic band gap of triply periodic bicontinuous cubic structures and of tubular structures constructed from the skeletal graphs of triply periodic minimal surfaces. The effect of the symmetry and topology of the periodic dielectric structures on the existence and the characteristi
High-Pressure Crystal Structure, Lattice Vibrations, and Band Structure of BiSbO4.
Errandonea, Daniel; Muñoz, Alfonso; Rodríguez-Hernández, Placida; Gomis, Oscar; Achary, S Nagabhusan; Popescu, Catalin; Patwe, Sadeque J; Tyagi, Avesh K
2016-05-16
The high-pressure crystal structure, lattice-vibrations, and electronic band structure of BiSbO4 were studied by ab initio simulations. We also performed Raman spectroscopy, infrared spectroscopy, and diffuse-reflectance measurements, as well as synchrotron powder X-ray diffraction. High-pressure X-ray diffraction measurements show that the crystal structure of BiSbO4 remains stable up to at least 70 GPa, unlike other known MTO4-type ternary oxides. These experiments also give information on the pressure dependence of the unit-cell parameters. Calculations properly describe the crystal structure of BiSbO4 and the changes induced by pressure on it. They also predict a possible high-pressure phase. A room-temperature pressure-volume equation of state is determined, and the effect of pressure on the coordination polyhedron of Bi and Sb is discussed. Raman- and infrared-active phonons were measured and calculated. In particular, calculations provide assignments for all the vibrational modes as well as their pressure dependence. In addition, the band structure and electronic density of states under pressure were also calculated. The calculations combined with the optical measurements allow us to conclude that BiSbO4 is an indirect-gap semiconductor, with an electronic band gap of 2.9(1) eV. Finally, the isothermal compressibility tensor for BiSbO4 is given at 1.8 GPa. The experimental (theoretical) data revealed that the direction of maximum compressibility is in the (0 1 0) plane at ∼33° (38°) to the c-axis and 47° (42°) to the a-axis. The reliability of the reported results is supported by the consistency between experiments and calculations. PMID:27128858
Perturbation method for calculation of narrow-band impedance and trapped modes
International Nuclear Information System (INIS)
An iterative method for calculation of the narrow-band impedance is described for a system with a small variation in boundary conditions, so that the variation can be considered as a perturbation. The results are compared with numeric calculations. The method is used to relate the origin of the trapped modes with the degeneracy of the spectrum of an unperturbed system. The method also can be applied to transverse impedance calculations. 6 refs., 6 figs., 1 tab
Determination of conduction and valence band electronic structure of anatase and rutile TiO2
Indian Academy of Sciences (India)
Jakub Szlachetko; Katarzyna Michalow-Mauke; Maarten Nachtegaal; Jacinto Sá
2014-03-01
Electronic structures of rutile and anatase polymorph of TiO2 were determined by resonant inelastic X-ray scattering measurements and FEFF9.0 calculations. Difference between crystalline structures led to shifts in the rutile Ti -band to lower energy with respect to anatase, i.e., decrease in band gap. Anatase possesses localized states located in the band gap where electrons can be trapped, which are almost absent in the rutile structure. This could well explain the reported longer lifetimes in anatase. It was revealed that HR-XAS is insufficient to study in-depth unoccupied states of investigated materials because it overlooks the shallow traps.
Emergence of rotational bands in ab initio no-core configuration interaction calculations
Caprio, M A; Vary, J P; Smith, R
2015-01-01
Rotational bands have been observed to emerge in ab initio no-core configuration interaction (NCCI) calculations for p-shell nuclei, as evidenced by rotational patterns for excitation energies, electromagnetic moments, and electromagnetic transitions. We investigate the ab initio emergence of nuclear rotation in the Be isotopes, focusing on 9Be for illustration, and make use of basis extrapolation methods to obtain ab initio predictions of rotational band parameters for comparison with experiment. We find robust signatures for rotational motion, which reproduce both qualitative and quantitative features of the experimentally observed bands.
Photonic band structures of two-dimensional photonic crystals with deformed lattices
Institute of Scientific and Technical Information of China (English)
Cai Xiang-Hua; Zheng Wan-Hua; Ma Xiao-Tao; Ren Gang; Xia Jian-Bai
2005-01-01
Using the plane-wave expansion method, we have calculated and analysed the changes of photonic band structures arising from two kinds of deformed lattices, including the stretching and shrinking of lattices. The square lattice with square air holes and the triangular lattice with circular air holes are both studied. Calculated results show that the change of lattice size in some special ranges can enlarge the band gap, which depends strongly on the filling factor of air holes in photonic crystals; and besides, the asymmetric band edges will appear with the broken symmetry of lattices.
Atomic Structure Calculations for Neutral Oxygen
Alonizan, Norah; Qindeel, Rabia; Ben Nessib, Nabil
2016-01-01
Energy levels and oscillator strengths for neutral oxygen have been calculated using the Cowan (CW), SUPERSTRUCTURE (SS), and AUTOSTRUCTURE (AS) atomic structure codes. The results obtained with these atomic codes have been compared with MCHF calculations and experimental values from the National Institute of Standards and Technology (NIST) database.
Band structures in Sierpinski triangle fractal porous phononic crystals
Wang, Kai; Liu, Ying; Liang, Tianshu
2016-10-01
In this paper, the band structures in Sierpinski triangle fractal porous phononic crystals (FPPCs) are studied with the aim to clarify the effect of fractal hierarchy on the band structures. Firstly, one kind of FPPCs based on Sierpinski triangle routine is proposed. Then the influence of the porosity on the elastic wave dispersion in Sierpinski triangle FPPCs is investigated. The sensitivity of the band structures to the fractal hierarchy is discussed in detail. The results show that the increase of the hierarchy increases the sensitivity of ABG (Absolute band gap) central frequency to the porosity. But further increase of the fractal hierarchy weakens this sensitivity. On the same hierarchy, wider ABGs could be opened in Sierpinski equilateral triangle FPPC; whilst, a lower ABG could be opened at lower porosity in Sierpinski right-angled isosceles FPPCs. These results will provide a meaningful guidance in tuning band structures in porous phononic crystals by fractal design.
Zacharias, Marios; Giustino, Feliciano
2016-08-01
Recently, Zacharias et al. [Phys. Rev. Lett. 115, 177401 (2015), 10.1103/PhysRevLett.115.177401] developed an ab initio theory of temperature-dependent optical absorption spectra and band gaps in semiconductors and insulators. In that work, the zero-point renormalization and the temperature dependence were obtained by sampling the nuclear wave functions using a stochastic approach. In the present work, we show that the stochastic sampling of Zacharias et al. can be replaced by fully deterministic supercell calculations based on a single optimal configuration of the atomic positions. We demonstrate that a single calculation is able to capture the temperature-dependent band-gap renormalization including quantum nuclear effects in direct-gap and indirect-gap semiconductors, as well as phonon-assisted optical absorption in indirect-gap semiconductors. In order to demonstrate this methodology, we calculate from first principles the temperature-dependent optical absorption spectra and the renormalization of direct and indirect band gaps in silicon, diamond, and gallium arsenide, and we obtain good agreement with experiment and with previous calculations. In this work we also establish the formal connection between the Williams-Lax theory of optical transitions and the related theories of indirect absorption by Hall, Bardeen, and Blatt, and of temperature-dependent band structures by Allen and Heine. The present methodology enables systematic ab initio calculations of optical absorption spectra at finite temperature, including both direct and indirect transitions. This feature will be useful for high-throughput calculations of optical properties at finite temperature and for calculating temperature-dependent optical properties using high-level theories such as G W and Bethe-Salpeter approaches.
Atomic structure of amorphous shear bands in boron carbide.
Reddy, K Madhav; Liu, P; Hirata, A; Fujita, T; Chen, M W
2013-01-01
Amorphous shear bands are the main deformation and failure mode of super-hard boron carbide subjected to shock loading and high pressures at room temperature. Nevertheless, the formation mechanisms of the amorphous shear bands remain a long-standing scientific curiosity mainly because of the lack of experimental structure information of the disordered shear bands, comprising light elements of carbon and boron only. Here we report the atomic structure of the amorphous shear bands in boron carbide characterized by state-of-the-art aberration-corrected transmission electron microscopy. Distorted icosahedra, displaced from the crystalline matrix, were observed in nano-sized amorphous bands that produce dislocation-like local shear strains. These experimental results provide direct experimental evidence that the formation of amorphous shear bands in boron carbide results from the disassembly of the icosahedra, driven by shear stresses.
Obtaining the band structure of a complicated photonic crystal by linear operations
Institute of Scientific and Technical Information of China (English)
吴良; 叶卓; 何赛灵
2003-01-01
Absolute band gaps can be created by lifting the degeneracy in the bands of a photonic crystal.To calculate the band structure of a complicated photonic crystal generated by e.g.symmetry breaking,general forms of all possible linear operations are presented in terms of matrices and a procedure to combine these operations is given.Other forms of linear operations(such as the addition,subtraction,and translation transforms) are also presented to obtain an explicit expression for the Fourier coefficient of the dielectric function in the plane-wave expansion method.With the present method,band structures for various complicated photonic crystals(related through these linear operations) can be obtained easily and quickly.As a numerical example,a large absolute band gap for a complicated photonic crystal structure of GaAs is found in the high region of normalized frequency.
Energy Technology Data Exchange (ETDEWEB)
Sedghi, Aliasghar [Islamic Azad University, Shabestar (Iran, Islamic Republic of); Valiaghaie, Soma [Islamic Azad University, Sanandaj (Iran, Islamic Republic of); Soufiani, Ahad Rounaghi [Islamic Azad University, Sufian (Iran, Islamic Republic of)
2014-10-15
By virtue of the efficiency of the Dirichlet-to-Neumann map method, we have calculated, for H-polarization (TE mode), the band structure of 2D photonic crystals with a square lattice composed of metallic rods embedded in an air background. The rod in the unit cell is chosen to be circular in shape. Here, from a practical point of view, in order to obtain maximum band gaps, we have studied the band structure as a function of the size of the rods. We have also studied the flat bands appearing in the band structures and have shown that for frequencies around the surface plasmon frequency, the modes are highly localized at the interface between the metallic rods and the air background.
Electronic structure of crystalline uranium nitride: LCAO DFT calculations
International Nuclear Information System (INIS)
The results of the first LCAO DFT calculations of cohesive energy, band structure and charge distribution in uranium nitride (UN) crystal are presented and discussed. The calculations are made with the uranium atom relativistic effective core potentials, including 60, 78 and 81 electrons in the core. It is demonstrated that the chemical bonding in UN crystal has a metallic-covalent nature. Three 5f-electrons are localized on the U atom and occupy the states near the Fermi level. The metallic nature of the crystal is due to the f-character of both the valence-band top and the conduction-band bottom. The covalent bonds are formed by the interaction of 7s- and 6d-states of the uranium atom with the 2p-states of the nitrogen atom. It is shown that the inclusion of 5f-electrons in the atomic core introduces small changes in the calculated cohesive energy of UN crystal and electron charge distribution. However, the inclusion of 5s-, 5p-, 5d-electrons in the valence shell allows the better agreement with the calculated and experimental cohesive-energy value. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Institute of Scientific and Technical Information of China (English)
王学滨
2004-01-01
A method for calculation of temperature distribution in adiabatic shear band is proposed in terms of gradient-dependent plasticity where the characteristic length describes the interactions and interplaying among microstructures. First, the increment of the plastic shear strain distribution in adiabatic shear band is obtained based on gradient-dependent plasticity. Then, the plastic work distribution is derived according to the current flow shear stress and the obtained increment of plastic shear strain distribution. In the light of the well-known assumption that 90% of plastic work is converted into the heat resulting in increase in temperature in adiabatic shear band, the increment of the temperature distribution is presented. Next, the average temperature increment in the shear band is calculated to compute the change in flow shear stress due to the thermal softening effect. After the actual flow shear stress considering the thermal softening effect is obtained according to the Johnson-Cook constitutive relation, the increment of the plastic shear strain distribution, the plastic work and the temperature in the next time step are recalculated until the total time is consumed. Summing the temperature distribution leads to rise in the total temperature distribution. The present calculated maximum temperature in adiabatic shear band in titanium agrees with the experimental observations. Moreover, the temperature profiles for different flow shear stresses are qualitatively consistent with experimental and numerical results. Effects of some related parameters on the temperature distribution are also predicted.
Electronic Band Structures of TiO2 with Heavy Nitrogen Doping
Institute of Scientific and Technical Information of China (English)
XUE Jinbo; LI Qi; LIANG Wei; SHANG Jianku
2008-01-01
The first-principles density-functional calculation was conducted to investigate the electronic band structures of titanium dioxide with heavy nitrogen doping (TiO2-xNx).The calculation results indicate that when x≤0.25,isolated N 2p states appear above the valence-band maximum of TiO2 without a band-gap narrowing between O 2p and Ti 3d states.When x≥0.50,an obvious band gap narrowing between O 2p and Ti 3d states was observed along with the existence of isolated N 2p states above the valence-band of TiO2,indicating that the mechanism proposed by Asahi et al operates under heavy nitrogen doping condition.
Fractional Band Filling in an Atomic Chain Structure
Crain, J. N.; Kirakosian, A.; Altmann, K. N.; Bromberger, C.; Erwin, S. C.; McChesney, J. L.; Lin, J.-L.; Himpsel, F. J.
2003-05-01
A new chain structure of Au is found on stepped Si(111) which exhibits a 1/4-filled band and a pair of ≥1/2-filled bands with a combined filling of 4/3. Band dispersions and Fermi surfaces for Si(553)-Au are obtained by photoemission and compared to that of Si(557)-Au. The dimensionality of both systems is determined using a tight binding fit. The fractional band filling makes it possible to preserve metallicity in the presence of strong correlations.
First-principles calculation of the electronic band of ZnO doped with C
Institute of Scientific and Technical Information of China (English)
Si Panpan; Su Xiyu; Hou Qinying; Li Yadong; Cheng Wei
2009-01-01
Using the first-principles approach based upon the density functional theory (DFT), we have studied the electronic structure of wurtzite ZnO systems doped with C at different sites. When Zn is substituted by C, the system turns from a direct band gap semiconductor into an indirect band gap semiconductor, and donor levels are formed. When O is substituted by C, acceptor levels are formed near the top of the valence band, and thus a p-type transformation of the system is achieved. When the two kinds of substitution coexist, the acceptor levels are compensated for all cases, which is unfavorable for the p-type transformation of the system.
Structure of nearly degenerate dipole bands in {sup 108}Ag
Energy Technology Data Exchange (ETDEWEB)
Sethi, J. [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Palit, R., E-mail: palit@tifr.res.in [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Saha, S.; Trivedi, T. [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhat, G.H.; Sheikh, J.A. [Department of Physics, University of Kashmir, Srinagar 190 006 (India); Datta, P. [Ananda Mohan College, Kolkata 700009 (India); Carroll, J.J. [US Army Research Laboratory, Adelphi, MD 20783 (United States); Chattopadhyay, S. [Saha Institute of Nuclear Physics, Kolkata 700064 (India); Donthi, R. [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Garg, U. [University of Notre Dame, Notre Dame, IN 46556 (United States); Jadhav, S.; Jain, H.C. [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Karamian, S. [Joint Institute for Nuclear Research, Dubna 141980 (Russian Federation); Kumar, S. [University of Delhi, Delhi 110007 (India); Litz, M.S. [US Army Research Laboratory, Adelphi, MD 20783 (United States); Mehta, D. [Panjab University, Chandigarh 160014 (India); Naidu, B.S. [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Naik, Z. [Sambalpur University, Sambalpur 143005 (India); Sihotra, S. [Panjab University, Chandigarh 160014 (India); and others
2013-08-09
The high spin negative parity states of {sup 108}Ag have been investigated with the {sup 11}B + {sup 100}Mo reaction at 39 MeV beam energy using the INGA facility at TIFR, Mumbai. From the γ–γ coincidence analysis, an excited negative parity band has been established and found to be nearly degenerate with the ground state band. The spin and parity of the levels are assigned using angular correlation and polarization measurements. This pair of degenerate bands in {sup 108}Ag is studied using the recently developed microscopic triaxial projected shell model approach. The observed energy levels and the ratio of the electromagnetic transition probabilities of these bands in this isotope are well reproduced by the present model. Further, it is shown that the partner band has a different quasiparticle structure as compared to the yrast band.
First-principle study of energy band structure of armchair graphene nanoribbons
Ma, Fei; Guo, Zhankui; Xu, Kewei; Chu, Paul K.
2012-07-01
First-principle calculation is carried out to study the energy band structure of armchair graphene nanoribbons (AGNRs). Hydrogen passivation is found to be crucial to convert the indirect band gaps into direct ones as a result of enhanced interactions between electrons and nuclei at the edge boundaries, as evidenced from the shortened bond length as well as the increased differential charge density. Ribbon width usually leads to the oscillatory variation of band gaps due to quantum confinement no matter hydrogen passivated or not. Mechanical strain may change the crystal symmetry, reduce the overlapping integral of C-C atoms, and hence modify the band gap further, which depends on the specific ribbon width sensitively. In practical applications, those effects will be hybridized to determine the energy band structure and subsequently the electronic properties of graphene. The results can provide insights into the design of carbon-based devices.
Band gap calculation and photo catalytic activity of rare earths doped rutile TiO2
Institute of Scientific and Technical Information of China (English)
BIAN Liang; SONG Mianxin; ZHOU Tianliang; ZHAO Xiaoyong; DAI Qingqing
2009-01-01
The density of states (DOS) of 17 kinds of rare earths (RE) doped futile TiO2 was by using fast-principles density functional the-ory (DFF) calculation. The band gap widths of RE doped rutile TiO2 were important factors for altering their absorbing wavelengths. The results show that RE ions could obviously reduce the band gap widths and form of energy of rutile TiO2 except Lu, Y, Yb and Sc, and the order of absorbing wavelengths of RE doped rutile TiO2 were the same as that of the results of calculation. The ratio of RE dopant was an-other important factor for the photo catalytic activity of RE doped rutile TiO2, and there was an optimal ratio of dopant. There was a constant for predigesting the calculation difficulty, respectively, which were 0.5mol.% and 100 mol-1 under supposition. The band gap widths of RE doped rutile TiO2 by DFT calculation were much larger than that by experiment. Finally, by transferring the calculation values to experiment values, it could be found and predicted that RE enlarged obviously the absorbing wavelengh of futile TiO2. In addition, the degree of RE ions edging out the Ti atom using the parameters of RE elements was computed.
International Nuclear Information System (INIS)
The band edge structure of Pbsub(1-x)Snsub(x)Te is derived in detail using a two band ellipsoidal model and compared with a more rigorous calculation based on six bands. A quantitative comparison is made for two values of the energy gap, corresponding to the cases where x=0 and x=0.17. It was found that, for the occupied states in nondegenerate materials, both models are practically equivalent. Discrepancies may occur only in high degeneracies or deep inversion layers. The agreement between both models was significantly improved by introducing an effective energy gap in the two band model. It is suggested that the use of the effective energy gap may improve the agreement between the two band model and experiment whenever the details of the band edge structure enter the interpretation of the experimental results. (author)
Paavilainen, Sami; Ropo, Matti; Nieminen, Jouko; Akola, Jaakko; Räsänen, Esa
2016-06-01
We uncover the electronic structure of molecular graphene produced by adsorbed CO molecules on a copper (111) surface by means of first-principles calculations. Our results show that the band structure is fundamentally different from that of conventional graphene, and the unique features of the electronic states arise from coexisting honeycomb and Kagome symmetries. Furthermore, the Dirac cone does not appear at the K-point but at the Γ-point in the reciprocal space and is accompanied by a third, almost flat band. Calculations of the surface structure with Kekulé distortion show a gap opening at the Dirac point in agreement with experiments. Simple tight-binding models are used to support the first-principles results and to explain the physical characteristics behind the electronic band structures.
Band structure characteristics of T-square fractal phononic crystals
Institute of Scientific and Technical Information of China (English)
Liu Xiao-Jian; Fan You-Hua
2013-01-01
The T-square fractal two-dimensional phononic crystal model is presented in this article.A comprehensive study is performed for the Bragg scattering and locally resonant fractal phononic crystal.We find that the band structures of the fractal and non-fractal phononic crystals at the same filling ratio are quite different through using the finite element method.The fractal design has an important impact on the band structures of the two-dimensional phononic crystals.
International Nuclear Information System (INIS)
New bismuth borophosphate Bi4BPO10 was obtained by spontaneous crystallization from the melt of correspondent composition at 804 °C. Crystal structure with orthorhombic lattice parameters: a = 22.5731(3) Å, b = 14.0523(2) Å, c = 5.5149(1) Å, V = 1749.34(4), Z = 8, SG Pcab was determined by X-ray powder diffraction technique. The [Bi2O2]2+ -layers, which are typical for bismuth oxide compounds, transform into cationic endless strips of 4 bismuth atoms width directed along the c-axis in Bi4BPO10. The strips combining stacks are separated by flat triangle [BO3]3− -anions within stacks. Neighboring stacks are separated by tetrahedral [PO4]3−-anions and shifted relatively to each other. Bismuth atoms are placed in 5–7 vertex oxygen irregular polyhedra. Bi4BPO10 is stable up to 812 °C, then melts according to the peritectic law. The absorption spectrum in the range 350–700 nm was obtained and the width of the forbidden band was estimated as 3.46 eV. The band electronic structure of Bi4BPO10 was modeled using DFT approach. The calculated band gap (3.56 eV) is in good agreement with the experimentally obtained data. - Graphical abstract: Display Omitted - Highlights: • New bismuth borophosphate with composition Bi4BPO10 was synthesized. • The crystal structure was determined by X-ray powder diffraction technique. • Bismuth-oxygen part [Bi4O3]6+ forms endless strips of 4 bismuth atoms width. • Electronic structure was modeled by DFT method. • The calculated band gap (3.56 eV) is very close to the experimental one (3.46 eV)
Mathew, Xavier
2000-07-01
In recent years there has been an increased interest in flexible, lightweight photovoltaic modules based on thin metallic substrates. This paper reports some optoelectronic properties of electrodeposited CdTe thin films grown onto lightweight stainless steel (SS) foils. The optoelectronic properties were investigated with Schottky barriers of Au/CdTe/SS structure. The influence of the built-in potential of the Schottky junction on the bulk and the interface recombination of the photo-generated minority carriers is explained with the existing models. The voltage-dependent collection functions influence the photocurrent of the devices in both short- and long-wavelength regions of the spectrum. It is observed that in the photovoltaic mode the contribution due to the collection functions depends on the open-circuit voltage of the device. Au/CdTe Schottky devices, having higher open-circuit voltage, exhibit a better response in the long wavelength region. This is due to the efficient collection of the carriers generated in the bulk of the film and in such devices the contribution from the bulk collection function is higher. The enhancement in the bulk collection function causes a shift in the response of the device to higher wavelengths giving lower values for the calculated band gap. Due to this dependence of the long wavelength response on the open-circuit voltage of the devices, the band gap calculated from the photocurrent of different Schottky devices gives different values for the band gap of the material. Thus the method of calculating the band gap from the photocurrent of Schottky devices can lead to erroneous conclusions regarding the band gap of the material.
Nuclear structure calculations for astrophysical applications
International Nuclear Information System (INIS)
Here we present calculated results on such diverse properties as nuclear energy levels, ground-state masses and shapes, β-decay properties and fission-barrier heights. Our approach to these calculations is to use a unified theoretical framework within which the above properties can all be studied. The results are obtained in the macroscopic-microscopic approach in which a microscopic nuclear-structure single-particle model with extensions is combined with a macroscopic model, such as the liquid drop model. In this model the total potential energy of the nucleus may be calculated as a function of shape. The maxima and minima in this function correspond to such features as the ground state, fission saddle points and shape-isomeric states. Various transition rate matrix elements are determined from wave-functions calculated in the single-particle model with pairing and other relevant residual interactions taken into account
Pathway to Oxide Photovoltaics via Band-Structure Engineering of SnO
Energy Technology Data Exchange (ETDEWEB)
Peng, Haowei; Bikowski, Andre; Zakutayev, Andriy; Lany, Stephan
2016-10-01
All-oxide photovoltaics could open rapidly scalable manufacturing routes, if only oxide materials with suitable electronic and optical properties were developed. SnO has exceptional doping and transport properties among oxides, but suffers from a strongly indirect band gap. Here, we address this shortcoming by band-structure engineering through isovalent but heterostructural alloying with divalent cations (Mg, Ca, Sr, and Zn). Using first-principles calculations, we show that suitable band gaps and optical properties close to that of direct semiconductors are achievable, while the comparatively small effective masses are preserved in the alloys. Initial thin film synthesis and characterization support the feasibility of the approach.
Research on the large band gaps in multilayer radial phononic crystal structure
Gao, Nansha; Wu, Jiu Hui; Guan, Dong
2016-04-01
In this paper, we study the band gaps (BGs) of new proposed radial phononic crystal (RPC) structure composed of multilayer sections. The band structure, transmission spectra and eigenmode displacement fields of the multilayer RPC are calculated by using finite element method (FEM). Due to the vibration coupling effects between thin circular plate and intermediate mass, the RPC structure can exhibit large BGs, which can be effectively shifted by changing the different geometry values. This study shows that multilayer RPC can unfold larger and lower BGs than traditional phononic crystals (PCs) and RPC can be composed of single material.
Millimeter-wave waveguiding using photonic band structures
Eliyahu, Danny; Sadovnik, Lev S.; Manasson, Vladimir A.
2000-07-01
Current trends in device miniaturization and integration, especially in the development of microwave monolithic integrated circuits, calls for flexible, arbitrarily shaped and curved interconnects. Standard dielectric waveguides and microstrip lines are subject to prohibitive losses and their functionality is limited because of their unflexible structures. The problem is addressed by confining the wave- guiding path in a substrate with a Photonic Band Gap structure in a manner that will result in the guided mode being localized within the band gap. Two devices implementing Photonic Band Structures for millimeter waves confinement are presented. The first waveguide is a linear defect in triangular lattice created in a silicon slab (TE mode). The structure consists of parallel air holes of circular cross sections. The silicon was laser drilled to create the 2D crystal. The second device consists of alumina rods arranged in a triangular lattice, surrounded by air and sandwiched between two parallel metal plates (TM mode). Electromagnetic wave (W-band) confinement was obtained in both devices for straight and bent waveguides. Three branch waveguides (intersecting line defects) was studied as well. Measurements confirmed the lowloss waveguide confinement property of the utilizing Photonic Band Gap structure. This structure can find applications in power combiner/splitter and other millimeter wave devices.
Markos, Peter
2016-01-01
Frequency and transmission spectrum of two-dimensional array of metallic rods is investigated numerically. Based on the recent analysis of the band structure of two-dimensional photonic crystal with dielectric rods [P. Marko\\v{s}, Phys. Rev. A 92 043814 (2015)] we identify two types of bands in the frequency spectrum: Bragg (P) bands resulting from a periodicity and Fano (F) bands which arise from Fano resonances associated with each of the cylinders within the periodic structure. It is shown that the existence of Fano band in a certain frequency range is manifested by a Fano resonance in the transmittance. In particular, we re-examine the symmetry properties of the H- polarized band structure in the frequency range where the spectrum consists of the localized modes associated with the single scatterer resonances and we explore process of formation of Fano bands by identifying individual terms in the expansion of the LCAO states. We demonstrate how the interplay between the two scattering mechanisms affects p...
Berry phase and band structure analysis of the Weyl semimetal NbP
Sergelius, Philip; Gooth, Johannes; Bäßler, Svenja; Zierold, Robert; Wiegand, Christoph; Niemann, Anna; Reith, Heiko; Shekhar, Chandra; Felser, Claudia; Yan, Binghai; Nielsch, Kornelius
2016-01-01
Weyl semimetals are often considered the 3D-analogon of graphene or topological insulators. The evaluation of quantum oscillations in these systems remains challenging because there are often multiple conduction bands. We observe de Haas-van Alphen oscillations with several frequencies in a single crystal of the Weyl semimetal niobium phosphide. For each fundamental crystal axis, we can fit the raw data to a superposition of sinusoidal functions, which enables us to calculate the characteristic parameters of all individual bulk conduction bands using Fourier transform with an analysis of the temperature and magnetic field-dependent oscillation amplitude decay. Our experimental results indicate that the band structure consists of Dirac bands with low cyclotron mass, a non-trivial Berry phase and parabolic bands with a higher effective mass and trivial Berry phase. PMID:27667203
Band formation in coupled-resonator slow-wave structures.
Möller, Björn M; Woggon, Ulrike; Artemyev, Mikhail V
2007-12-10
Sequences of coupled-resonator optical waveguides (CROWs) have been examined as slow-wave structures. The formation of photonic bands in finite systems is studied in the frame of a coupled oscillator model. Several types of resonator size tuning in the system are evaluated in a systematical manner. We show that aperiodicities in sequences of coupled microspheres provide an additional degree of freedom for the design of photonic bands. PMID:19551030
Band structures and localization properties of aperiodic layered phononic crystals
Energy Technology Data Exchange (ETDEWEB)
Yan Zhizhong, E-mail: zzyan@bit.edu.cn [Department of Applied Mathematics, Beijing Institute of Technology, Beijing 100081 (China); Zhang Chuanzeng [Department of Civil Engineering, University of Siegen, D-57078 Siegen (Germany)
2012-03-15
The band structures and localization properties of in-plane elastic waves with coupling of longitudinal and transverse modes oblique propagating in aperiodic phononic crystals based on Thue-Morse and Rudin-Shapiro sequences are studied. Using transfer matrix method, the concept of the localization factor is introduced and the correctness is testified through the Rytov dispersion relation. For comparison, the perfect periodic structure and the quasi-periodic Fibonacci system are also considered. In addition, the influences of the random disorder, local resonance, translational and/or mirror symmetries on the band structures of the aperiodic phononic crystals are analyzed in this paper.
Band structures of 4f and 5f materials studied by angle-resolved photoelectron spectroscopy
Fujimori, Shin-ichi
2016-04-01
Recent remarkable progress in angle-resolved photoelectron spectroscopy (ARPES) has enabled the direct observation of the band structures of 4f and 5f materials. In particular, ARPES with various light sources such as lasers (hν ∼ 7~\\text{eV} ) or high-energy synchrotron radiations (hν ≳ 400~\\text{eV} ) has shed light on the bulk band structures of strongly correlated materials with energy scales of a few millielectronvolts to several electronvolts. The purpose of this paper is to summarize the behaviors of 4f and 5f band structures of various rare-earth and actinide materials observed by modern ARPES techniques, and understand how they can be described using various theoretical frameworks. For 4f-electron materials, ARPES studies of \\text{Ce}M\\text{I}{{\\text{n}}5} (M=\\text{Rh} , \\text{Ir} , and \\text{Co} ) and \\text{YbR}{{\\text{h}}2}\\text{S}{{\\text{i}}2} with various incident photon energies are summarized. We demonstrate that their 4f electronic structures are essentially described within the framework of the periodic Anderson model, and that the band-structure calculation based on the local density approximation cannot explain their low-energy electronic structures. Meanwhile, electronic structures of 5f materials exhibit wide varieties ranging from itinerant to localized states. For itinerant \\text{U}~5f compounds such as \\text{UFeG}{{\\text{a}}5} , their electronic structures can be well-described by the band-structure calculation assuming that all \\text{U}~5f electrons are itinerant. In contrast, the band structures of localized \\text{U}~5f compounds such as \\text{UP}{{\\text{d}}3} and \\text{U}{{\\text{O}}2} are essentially explained by the localized model that treats \\text{U}~5f electrons as localized core states. In regards to heavy fermion \\text{U} -based compounds such as the hidden-order compound \\text{UR}{{\\text{u}}2}\\text{S}{{\\text{i}}2} , their electronic structures exhibit complex behaviors. Their overall band structures
Band structure and optical properties of LiKB4O7 single crystal
Smok, P; Seinert, H; Kityk, [No Value; Berdowski, J
2003-01-01
The band structure (BS), electronic charge density distribution and linear optical properties of the LiKB4O7 (LKB4) single crystal are calculated using a self-consistent norm-conserving pseudo-potential method within the framework of the local density approximation theory. Dispersion of the imaginar
Photonic Band Structure of Dispersive Metamaterials Formulated as a Hermitian Eigenvalue Problem
Raman, Aaswath
2010-02-26
We formulate the photonic band structure calculation of any lossless dispersive photonic crystal and optical metamaterial as a Hermitian eigenvalue problem. We further show that the eigenmodes of such lossless systems provide an orthonormal basis, which can be used to rigorously describe the behavior of lossy dispersive systems in general. © 2010 The American Physical Society.
Band-gap shrinkage calculations and analytic model for strained bulk InGaAsP
Connelly, Michael J.
2015-02-01
Band-gap shrinkage is an important effect in semiconductor lasers and optical amplifiers. In the former it leads to an increase in the lasing wavelength and in the latter an increase in the gain peak wavelength as the bias current is increased. The most common model used for carrier-density dependent band-gap shrinkage is a cube root dependency on carrier density, which is strictly only true for high carrier densities and low temperatures. This simple model, involves a material constant which is treated as a fitting parameter. Strained InGaAsP material is commonly used to fabricate polarization insensitive semiconductor optical amplifiers (SOAs). Most mathematical models for SOAs use the cube root bandgap shrinkage model. However, because SOAs are often operated over a wide range of drive currents and input optical powers leading to large variations in carrier density along the amplifier length, for improved model accuracy it is preferable to use band-gap shrinkage calculated from knowledge of the material bandstructure. In this letter the carrier density dependent band-gap shrinkage for strained InGaAsP is calculated by using detailed non-parabolic conduction and valence band models. The shrinkage dependency on temperature and both tensile and compressive strain is investigated and compared to the cube root model, for which it shows significant deviation. A simple power model, showing an almost square-root dependency, is derived for carrier densities in the range usually encountered in InGaAsP laser diodes and SOAs.
Band-gap shrinkage calculations and analytic model for strained bulk InGaAsP
International Nuclear Information System (INIS)
Band-gap shrinkage is an important effect in semiconductor lasers and optical amplifiers. In the former it leads to an increase in the lasing wavelength and in the latter an increase in the gain peak wavelength as the bias current is increased. The most common model used for carrier-density dependent band-gap shrinkage is a cube root dependency on carrier density, which is strictly only true for high carrier densities and low temperatures. This simple model, involves a material constant which is treated as a fitting parameter. Strained InGaAsP material is commonly used to fabricate polarization insensitive semiconductor optical amplifiers (SOAs). Most mathematical models for SOAs use the cube root bandgap shrinkage model. However, because SOAs are often operated over a wide range of drive currents and input optical powers leading to large variations in carrier density along the amplifier length, for improved model accuracy it is preferable to use band-gap shrinkage calculated from knowledge of the material bandstructure. In this letter the carrier density dependent band-gap shrinkage for strained InGaAsP is calculated by using detailed non-parabolic conduction and valence band models. The shrinkage dependency on temperature and both tensile and compressive strain is investigated and compared to the cube root model, for which it shows significant deviation. A simple power model, showing an almost square-root dependency, is derived for carrier densities in the range usually encountered in InGaAsP laser diodes and SOAs. (paper)
International Nuclear Information System (INIS)
The full quasiparticle band structure of CdWO4 is calculated within the single-shot GW (G0W0) approximation using maximally localized Wannier functions, which allows one to assess the validity of the commonly used scissor operator. Calculations are performed using the Godby–Needs plasmon pole model and the accurate contour deformation technique. It is shown that while the two methods yield identical band gap energies, the low-lying states are given inaccurately by the plasmon pole model. We report a band gap energy of 4.94 eV, including spin–orbit interaction at the DFT–LDA (density functional theory–local density approximation) level. Quasiparticle renormalization in CdWO4 is shown to be correlated with localization distance. Electron and hole effective masses are calculated at the DFT and G0W0 levels. (paper)
Ab initio calculations of electronic structure of anatase TiO2
Institute of Scientific and Technical Information of China (English)
Chen Qiang; Cao Hong-Hong
2004-01-01
This paper presents the results of the self-consistent calculations on the electronic structure of anatase phase of TiO2. The calculations were performed using the full potential-linearized augmented plane wave method (FP-LAPW)in the framework of the density functional theory (DFT) with the generalized gradient approximation (GGA). The fully optimized structure, obtained by minimizing the total energy and atomic forces, is in good agreement with experiment.We also calculated the band structure and the density of states. In particular, the calculated band structure prefers an indirect transition between wlence and conduction bands of anatase TiO2, which may be helpful for clarifying the ambiguity in other theoretical works.
Tuning the electronic band structure of PCBM by electron irradiation
Directory of Open Access Journals (Sweden)
Yoo Seung
2011-01-01
Full Text Available Abstract Tuning the electronic band structures such as band-edge position and bandgap of organic semiconductors is crucial to maximize the performance of organic photovoltaic devices. We present a simple yet effective electron irradiation approach to tune the band structure of [6, 6]-phenyl-C61-butyric acid methyl ester (PCBM that is the most widely used organic acceptor material. We have found that the lowest unoccupied molecular orbital (LUMO level of PCBM up-shifts toward the vacuum energy level, while the highest occupied molecular orbital (HOMO level down-shifts when PCBM is electron-irradiated. The shift of the HOMO and the LUMO levels increases as the irradiated electron fluence increases. Accordingly, the band-edge position and the bandgap of PCBM can be controlled by adjusting the electron fluence. Characterization of electron-irradiated PCBM reveals that the variation of the band structure is attributed to the molecular structural change of PCBM by electron irradiation.
Model calculation of N2 Vegard-Kaplan band emissions in Martian dayglow
Jain, Sonal Kumar
2011-01-01
A model for N2 Vegard-Kaplan (VK) band (A^3Sigma_u^+ - X^1Sigma_g^+) emissions in Martian dayglow has been developed to explain the recent observations made by the Spectroscopy for Investigation of Characteristics of the Atmosphere of Mars (SPICAM) ultraviolet spectrograph aboard Mars Express. Steady state photoelectron fluxes and volume excitation rates have been calculated using the analytical yield spectra technique. Since interstate cascading is important for triplet states of N2, the population of any given level of N2 triplet states is calculated under statistical equilibrium considering direct excitation, cascading, and quenching effects. Relative population of all vibrational levels of each triplet state is calculated in the model. Line of sight intensities and height-integrated overhead intensities have been calculated for VK, first positive (B^3Pi_g - A^3Sigma_u^+), second positive (C^3Pi_u - B^3Pi_g), and Wu-Benesch (W^3Delta_u - B^3Pi_g) bands of N2. A reduction in the N2 density by a factor of 3 ...
Optimum design of band-gap beam structures
DEFF Research Database (Denmark)
Olhoff, Niels; Niu, Bin; Cheng, Gengdong
2012-01-01
of a single, linearly elastic material without damping. Numerical results are presented for different combinations of classical boundary conditions, prescribed orders of the upper and lower natural frequencies of maximized natural frequency gaps, and a given minimum constraint value for the beam cross......The design of band-gap structures receives increasing attention for many applications in mitigation of undesirable vibration and noise emission levels. A band-gap structure usually consists of a periodic distribution of elastic materials or segments, where the propagation of waves is impeded...
International Nuclear Information System (INIS)
Isotopic selectivity calculations are carried out for minor calcium isotopes against the major isotope 40Ca for the single-resonance two-step and double-resonance three-step photoionization schemes with narrow-band lasers by using spectral simulation (SS) and modified spectrum (MS) approaches. The results of these calculations are compared with the density matrix (DM) results reported in the literature. It is noted that the values of isotopic selectivity from the SS approach do not agree with those from the DM approach whereas the MS approach, considering hole burning in the Doppler-broadened atomic spectrum, predicts selectivity values which are in good agreement with the DM results. It is argued that one can adequately use the simple MS approach rather than the complex DM approach for the calculation of isotopic selectivity of multi-step photoionization with single-frequency lasers. (author)
Calculation Method for Flight Limit Load of V-band Clamp Separation Shock
Iwasa, Takashi; Shi, Qinzhong
A simplified calculation method for estimating a flight limit load of the V-band clamp separation shock was established. With this method, the flight limit load is estimated through addition of an appropriate envelope margin to the results acquired with the simplified analysis method proposed in our previous paper. The envelope margin used in the method was calculated based on the reviews on the differences observed between the results of a pyroshock test and the analysis. Using the derived envelope margin, a calculating formula of the flight limit load, which envelopes the actual pyroshock responses with a certain probability, was developed. Based on the formula, flight limit loads for several actual satellites were estimated and compared to the test results. The comparative results showed that the estimated flight limit loads appropriately envelope the test results, which confirmed the effectiveness of the proposed method.
Structural phase transition study of FePt alloys using ab initio calculation
International Nuclear Information System (INIS)
The FePt alloy undergoes the cubic to tetragonal lattice transformation in the ferromagnetic state. We calculated the electronic structure for both cubic and tetragonal structures using the FPLAPW method with APW + lo. Comparing the density of states of the cubic and tetragonal structures, it is expected that the lattice transformation is caused by the band Jahn-Teller effect.
Reflectivity calculated for a 3D silicon photonic band gap crystal with finite support
Devashish, D; van der Vegt, J J W; Vos, Willem L
2016-01-01
We study numerically the reflectivity of three-dimensional (3D) photonic crystals with a complete 3D photonic band gap, with the aim to interpret recent experiments. We employ the finite element method to study crystals with the cubic diamond-like inverse woodpile structure. The high-index backbone has a dielectric function similar to silicon. We study crystals with a range of thicknesses up to ten unit cells ($L \\leq 10 c$). The crystals are surrounded by vacuum, and have a finite support as in experiments. The polarization-resolved reflectivity spectra reveal Fabry-P{\\'e}rot fringes related to standing waves in the finite crystal, as well as broad stop bands with nearly $100~\\%$ reflectivity, even for thin crystals. From the strong reflectivity peaks, it is inferred that the maximum reflectivity observed in experiments is not limited by finite size. The frequency ranges of the stop bands are in excellent agreement with stop gaps in the photonic band structure, that pertain to infinite and perfect crystals. ...
Energy band structure of Cr by the Slater-Koster interpolation scheme
International Nuclear Information System (INIS)
The matrix elements of the Hamiltonian between nine localized wave-functions in tight-binding formalism are derived. The symmetry adapted wave-functions and the secular equations are formed by the group theory method for high symmetry points in the Brillouin zone. A set of interaction integrals is chosen on physical ground and fitted via the Slater-Koster interpolation scheme to the abinito band structure of chromium calculated by the Green function method. Then the energy band structure of chromium is interpolated and extrapolated in the Brillouin zone. (author)
Band structures in silicene on monolayer gallium phosphide substrate
Ren, Miaojuan; Li, Mingming; Zhang, Changwen; Yuan, Min; Li, Ping; Li, Feng; Ji, Weixiao; Chen, Xinlian
2016-07-01
Opening a sizable band gap in the zero-gap silicene is a key issue for its application in nanoelectronics. We design new 2D silicene and GaP heterobilayer (Si/GaP HBL) composed of silicene and monolayer (ML) GaP. Based on first-principles calculations, we find that the interaction energies are in the range of -295.5 to -297.5 meV per unit cell, indicating a weak interaction between silicene and gallium phosphide (GaP) monolayer. The band gap changes ranging from 0.06 to 0.44 eV in hybrid HBLs. An unexpected indirect-direct band gap crossover is also observed in HBLs, dependent on the stacking pattern. These provide a possible way to design effective FETs out of silicene on GaP monolayer.
Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices
DEFF Research Database (Denmark)
Gorczyca, I.; Suski, T.; Christensen, Niels Egede;
2012-01-01
for the gap error. The calculated band gap shows a strong decrease with the thickness (m) of the InN well. In superlattices containing a single layer of InN (m = 1) the band gap increases weakly with the GaN barrier thickness n, reaching a saturation value around 2 eV. In superlattices with n = m and n > 5......InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys. The electronic structures of short-period wurtzite InN/GaN......(0001) superlattices are investigated, and the variation of the band gap with the thicknesses of the well and the barrier is discussed. Superlattices of the form mInN/nGaN with n ≥ m are simulated using band structure calculations in the Local Density Approximation with a semiempirical correction...
Xu, Kai-kai; Xiao, Zhong-yin; Tang, Jing-yao; Liu, De-jun; Wang, Zi-hua
2016-07-01
In the paper, a novel three-layered chiral structure is proposed and investigated, which consists of a split-ring resonator sandwiched between two layers of sub-wavelength gratings. This designed structure can achieve simultaneously asymmetric transmission with an extremely broad bandwidth and high amplitude as well as multi-band 90° polarization rotator with very low dispersion. Numerical simulations adopted two kinds of softwares with different algorithms demonstrate that asymmetric parameter can reach a maximum of 0.99 and over than 0.8 from 4.6 to 16.8 GHz, which exhibit magnitude and bandwidth improvement over previous chiral metamaterials in microwave bands (S, C, X and Ku bands). Specifically, the reason of high amplitude is analyzed in detail based on the Fabry-perot like resonance. Subsequently, the highly efficient polarization conversion with very low dispersion between two orthogonal linearly polarized waves is also analyzed by the optical activity and ellipticity. Finally, the electric fields are also investigated and further demonstrate the correctness of the simulated and calculated results.
Isogeometric analysis in electronic structure calculations
Cimrman, Robert; Kolman, Radek; Tůma, Miroslav; Vackář, Jiří
2016-01-01
In electronic structure calculations, various material properties can be obtained by means of computing the total energy of a system as well as derivatives of the total energy w.r.t. atomic positions. The derivatives, also known as Hellman-Feynman forces, require, because of practical computational reasons, the discretized charge density and wave functions having continuous second derivatives in the whole solution domain. We describe an application of isogeometric analysis (IGA), a spline modification of finite element method (FEM), to achieve the required continuity. The novelty of our approach is in employing the technique of B\\'ezier extraction to add the IGA capabilities to our FEM based code for ab-initio calculations of electronic states of non-periodic systems within the density-functional framework, built upon the open source finite element package SfePy. We compare FEM and IGA in benchmark problems and several numerical results are presented.
Schickling, Tobias; Bünemann, Jörg; Gebhard, Florian; Boeri, Lilia
2016-05-01
We use the Gutzwiller density-functional theory to calculate ground-state properties and band structures of iron in its body-centered-cubic (bcc) and hexagonal-close-packed (hcp) phases. For a Hubbard interaction U =9 eV and Hund's-rule coupling J =0.54 eV , we reproduce the lattice parameter, magnetic moment, and bulk modulus of bcc iron. For these parameters, bcc is the ground-state lattice structure at ambient pressure up to a pressure of pc=41 GPa where a transition to the nonmagnetic hcp structure is predicted, in qualitative agreement with experiment (pcexp=10 ,...,15 GPa ) . The calculated band structure for bcc iron is in good agreement with ARPES measurements. The agreement improves when we perturbatively include the spin-orbit coupling.
Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds
International Nuclear Information System (INIS)
Our ab initio theory calculations predict a semiconducting band structure of I-Mn-V compounds. We demonstrate on LiMnAs that high-quality materials with group-I alkali metals in the crystal structure can be grown by molecular beam epitaxy. Optical measurements on the LiMnAs epilayers are consistent with the theoretical electronic structure. Our calculations also reproduce earlier reports of high antiferromagnetic ordering temperature and predict large, spin-orbit-coupling-induced magnetic anisotropy effects. We propose a strategy for employing antiferromagnetic semiconductors in high-temperature semiconductor spintronics.
Strain effects on band structure of wurtzite ZnO: a GGA + U study
International Nuclear Information System (INIS)
Band structures in wurtzite bulk ZnO/Zn1−xMgxO are calculated using first-principles based on the framework of generalized gradient approximation to density functional theory with the introduction of the on-site Coulomb interaction. Strain effects on band gap, splitting energies of valence bands, electron and hole effective masses in strained bulk ZnO are discussed. According to the results, the band gap increases gradually with increasing stress in strained ZnO as an Mg content of Zn1−xMgxO substrate less than 0.3, which is consistent with the experimental results. It is further demonstrated that electron mass of conduction band (CB) under stress increases slightly. There are almost no changes in effective masses of light hole band (LHB) and heavy hole band (HHB) along [00k] and [k00] directions under stress, and stress leads to an obvious decrease in effective masses of crystal splitting band (CSB) along the same directions. (semiconductor materials)
Tunable band structures of polycrystalline graphene by external and mismatch strains
Institute of Scientific and Technical Information of China (English)
Jiang-Tao Wu; Xing-Hua Shi; Yu-Jie Wei
2012-01-01
Lacking a band gap largely limits the application of graphene in electronic devices.Previous study shows that grain boundaries (GBs) in polycrystalline graphene can dramatically alter the electrical properties of graphene.Here,we investigate the band structure of polycrystalline graphene tuned by externally imposed strains and intrinsic mismatch strains at the GB by density functional theory (DFT) calculations.We found that graphene with symmetrical GBs typically has zero band gap even with large uniaxial and biaxial strain.However,some particular asymmetrical GBs can open a band gap in graphene and their band structures can be substantially tuned by external strains.A maximum band gap about 0.19 eV was observed in matched-armchair GB (5,5) | (3,7) with a misorientation of θ =13° when the applied uniaxial strain increases to 9％.Although mismatch strain is inevitable in asymmetrical GBs,it has a small influence on the band gap of polycrystalline graphene.
Friedrich, C.; Müller, M.C.T.D.; Blügel, S.
2011-01-01
Recently, Shih et al. [Phys. Rev. Lett. 105, 146401 (2010)] published a theoretical band gap for wurtzite ZnO, calculated with the non-self-consistent GW approximation, that agreed surprisingly well with experiment while deviating strongly from previous studies. They showed that a very large number of empty bands is necessary to converge the gap. We reexamine the GW calculation with the full-potential linearized augmented-plane-wave method and find that even with 3000 bands the band gap is no...
Lattice QCD Calculation of Nucleon Structure
Energy Technology Data Exchange (ETDEWEB)
Liu, Keh-Fei [University of Kentucky, Lexington, KY (United States). Dept. of Physics and Astronomy; Draper, Terrence [University of Kentucky, Lexington, KY (United States). Dept. of Physics and Astronomy
2016-08-30
It is emphasized in the 2015 NSAC Long Range Plan [1] that "understanding the structure of hadrons in terms of QCD's quarks and gluons is one of the central goals of modern nuclear physics." Over the last three decades, lattice QCD has developed into a powerful tool for ab initio calculations of strong-interaction physics. Up until now, it is the only theoretical approach to solving QCD with controlled statistical and systematic errors. Since 1985, we have proposed and carried out first-principles calculations of nucleon structure and hadron spectroscopy using lattice QCD which entails both algorithmic development and large scale computer simulation. We started out by calculating the nucleon form factors ₋ electromagnetic [2], axial-vector [3], π NN [4], and scalar [5] form factors, the quark spin contribution [6] to the proton spin, the strangeness magnetic moment [7], the quark orbital angular momentum [8], the quark momentum fraction [9], and the quark and glue decomposition of the proton momentum and angular momentum [10]. These first round of calculations were done with Wilson fermions in the `quenched' approximation where the dynamical effects of the quarks in the sea are not taken into account in the Monte Carlo simulation to generate the background gauge configurations. Beginning in 2000, we have started implementing the overlap fermion formulation into the spectroscopy and structure calculations [11, 12]. This is mainly because the overlap fermion honors chiral symmetry as in the continuum. It is going to be more and more important to take the symmetry into account as the simulations move closer to the physical point where the u and d quark masses are as light as a few MeV only. We began with lattices which have quark masses in the sea corresponding to a pion mass at ~ 300 MeV and obtained the strange form factors [13], charm and strange quark masses, the charmonium spectrum and the D_{s} meson decay constant fD_{s} [14], the
Lattice QCD Calculation of Nucleon Structure
Energy Technology Data Exchange (ETDEWEB)
Liu, Keh-Fei; Draper, Terrence
2016-08-30
It is emphasized in the 2015 NSAC Long Range Plan [1] that \\understanding the structure of hadrons in terms of QCD's quarks and gluons is one of the central goals of modern nuclear physics." Over the last three decades, lattice QCD has developed into a powerful tool for ab initio calculations of strong-interaction physics. Up until now, it is the only theoretical approach to solving QCD with controlled statistical and systematic errors. Since 1985, we have proposed and carried out rst-principles calculations of nucleon structure and hadron spectroscopy using lattice QCD which entails both algorithmic development and large scale computer simulation. We started out by calculating the nucleon form factors { electromagnetic [2], axial-vector [3], NN [4], and scalar [5] form factors, the quark spin contribution [6] to the proton spin, the strangeness magnetic moment [7], the quark orbital angular momentum [8], the quark momentum fraction [9], and the quark and glue decomposition of the proton momentum and angular momentum [10]. These rst round of calculations were done with Wilson fermions in the `quenched' approximation where the dynamical e ects of the quarks in the sea are not taken into account in the Monte Carlo simulation to generate the background gauge con gurations. Beginning in 2000, we have started implementing the overlap fermion formulation into the spectroscopy and structure calculations [11, 12]. This is mainly because the overlap fermion honors chiral symmetry as in the continuum. It is going to be more and more important to take the symmetry into account as the simulations move closer to the physical point where the u and d quark masses are as light as a few MeV only. We began with lattices which have quark masses in the sea corresponding to a pion mass at 300 MeV and obtained the strange form factors [13], charm and strange quark masses, the charmonium spectrum and the Ds meson decay constant fDs [14], the strangeness and charmness [15], the
Doping-dependent quasiparticle band structure in cuprate superconductors
Eder, R; Ohta, Y.; Sawatzky, G.A
1997-01-01
We present an exact diagonalization study of the single-particle spectral function in the so-called t-t'-t ''-J model in two dimensions. As a key result, we find that hole doping leads to a major reconstruction of the quasiparticle band structure near (pi,0): whereas for the undoped system the quasi
Design for maximum band-gaps in beam structures
DEFF Research Database (Denmark)
Olhoff, Niels; Niu, Bin; Cheng, Gengdong
2012-01-01
This paper aims to extend earlier optimum design results for transversely vibrating Bernoulli-Euler beams by determining new optimum band-gap beam structures for (i) different combinations of classical boundary conditions, (ii) much larger values of the orders n and n-1 of adjacent upper and lower...
Electronic Properties of ZnO: Band Structure and Directional Compton Profiles
Sharma, G.; Mishra, M. C.; Dhaka, M. S.; Kothari, R. K.; Joshi, K. B.; Sharma, B. K.
2013-12-01
The electronic band structure and directional Compton profiles (DCPs) of ZnO are studied in this work. Calculations are performed considering a set of three schemes based on density functional theory (DFT), the Hartree-Fock (HF) method, and a hybrid scheme. All band structures predict direct bandgaps. The best agreement with experiment is, however, shown by the hybrid scheme. The three schemes are also applied to compute DCPs along [100], [110], and [001] directions. These are compared with measurements made on single crystals of ZnO employing a 59.54 keV gamma-ray Compton spectrometer. Calculations overestimate the momentum density in the low-momentum region while underestimate the anisotropies. Positions of extremes in anisotropies deduced from calculations are well reproduced by the measured anisotropies in some cases. Within the experimental limits, the DCPs from the HF method are in better agreement with the measurements compared with DFT.
Band gap engineering in penta-graphene by substitutional doping: first-principles calculations.
Berdiyorov, G R; Dixit, G; Madjet, M E
2016-11-30
Using density functional theory, we study the structure, electronic properties and partial charges of a new carbon allotrope-penta-graphene (PG)-substitutionally doped by Si, B and N. We found that the electronic bandgap of PG can be tuned down to 0.2 eV due to carbon substitutions. However, the value of the band gap depends on the type and location of the dopants. For example, the strongest reduction of the band gap is obtained for Si substitutions on the top (bottom) plane of PG, whereas the substitution in the middle plane of PG has a smaller effect on the band gap of the material. Surface termination with fluorine and hydroxyl groups results in an increase of the band gap together with considerable changes in electronic and atomic partial charge distribution in the system. Our findings, which are robust against the use of different exchange-correlation functionals, indicate the possibility of tuning the bandgap of the material to make it suitable for optoelectronic and photovoltaic applications. PMID:27633017
X-Band Photonic Band-Gap Accelerator Structure Breakdown Experiment
Energy Technology Data Exchange (ETDEWEB)
Marsh, Roark A.; /MIT /MIT /NIFS, Gifu /JAERI, Kyoto /LLNL, Livermore; Shapiro, Michael A.; Temkin, Richard J.; /MIT; Dolgashev, Valery A.; Laurent, Lisa L.; Lewandowski, James R.; Yeremian, A.Dian; Tantawi, Sami G.; /SLAC
2012-06-11
In order to understand the performance of photonic band-gap (PBG) structures under realistic high gradient, high power, high repetition rate operation, a PBG accelerator structure was designed and tested at X band (11.424 GHz). The structure consisted of a single test cell with matching cells before and after the structure. The design followed principles previously established in testing a series of conventional pillbox structures. The PBG structure was tested at an accelerating gradient of 65 MV/m yielding a breakdown rate of two breakdowns per hour at 60 Hz. An accelerating gradient above 110 MV/m was demonstrated at a higher breakdown rate. Significant pulsed heating occurred on the surface of the inner rods of the PBG structure, with a temperature rise of 85 K estimated when operating in 100 ns pulses at a gradient of 100 MV/m and a surface magnetic field of 890 kA/m. A temperature rise of up to 250 K was estimated for some shots. The iris surfaces, the location of peak electric field, surprisingly had no damage, but the inner rods, the location of the peak magnetic fields and a large temperature rise, had significant damage. Breakdown in accelerator structures is generally understood in terms of electric field effects. These PBG structure results highlight the unexpected role of magnetic fields in breakdown. The hypothesis is presented that the moderate level electric field on the inner rods, about 14 MV/m, is enhanced at small tips and projections caused by pulsed heating, leading to breakdown. Future PBG structures should be built to minimize pulsed surface heating and temperature rise.
An Extensive Database of Electronic Structure Calculations between Transition Metals
Sayed, Shereef; Papaconstantopoulos, Dimitrios
Density Functional Theory and its derived application methods, such as the Augmented Plane Wave (APW) method, have shown great success in predicting the fundamental properties of materials. In this work, we apply the APW method to explore the properties of diatomic pairs of transition metals in the CsCl structure, for all possible combinations. A total of 435 compounds have been studied. The predicted Density of States, and Band Structures are presented, along with predicted electron-phonon coupling and Stoner Criterion, in order to identify potential new superconducting or ferromagnetic materials. This work is performed to demonstrate the concept of ``high-throughput'' calculations at the crossing-point of ``Big Data'' and materials science. Us Dept of Energy.
Band Structure Modifications in Deformed InP Quantum Wires
Directory of Open Access Journals (Sweden)
V.V. Kuryliuk
2014-11-01
Full Text Available The work describes the features of the band structure of deformed InP nanowires with different diameters. It is shown that the bending of quantum wires is capable of creating local minima in the conduction and valence bands which are separated from the surface of the cylindrical wire. This result opens up new possibilities for controlling both the lifetime of photoexcited carriers by keeping them at these minima and the magnitude of the photovoltage in solar energy conversion devices based on quantum wires. The work lies within a common goal aiming to develop new methods of functionalization of nanostructured surfaces using mechanical deformations.
METHODS OF CALCULATING THE ELECTRONIC AND ATOMIC STRUCTURES OF INTERFACES
Sutton, A
1985-01-01
Methods of calculating the electronic and atomic structures of interfaces are described. An introduction to pseudopotentials and LCAO methods is given. Methods of calculating the electronic structure of an interface with a given atomic structure are considered. The feasibility of total energy calculations, in which the atomic and electronic structures are calculated simultaneously, is discussed.
Crystal structure, energy band and optical properties of dysprosium monophosphate DyPO{sub 4}
Energy Technology Data Exchange (ETDEWEB)
Khadraoui, Z.; Bouzidi, C., E-mail: bouzidtc@yahoo.fr; Horchani-Naifer, K.; Ferid, M.
2014-12-25
Graphical abstract: The monophosphate DyPO{sub 4} has been synthesized by high temperature solid-state reaction method and was structurally characterized by single crystal X-ray diffraction. DyPO{sub 4} crystallizes in the tetragonal system (I4{sub 1}/Iamd). The energy-band structure, density of states and the chemical bonds have been investigated by density functional methods (DFT). - Highlights: • The DyPO{sub 4} has been synthesized by high temperature solid-state reaction method. • DFT was used to determine the electronic structure and optical properties of DyPO{sub 4}. • The monophosphate DyPO{sub 4} is an insulator with direct band gap (6.38 eV). - Abstract: A rare earth monophosphate crystal of DyPO{sub 4} has been synthesized by high temperature solid-state reaction method and was structurally characterized by single crystal X-ray diffraction. Atomic arrangement of DyPO{sub 4} structure is based on corner and edge sharing PO{sub 4} tetrahedra and DyO{sub 8} polyhedra. The FTIR, Raman, Scanning electron microscopy, diffuse reflectance and emission spectra of the compound have been investigated. Density functional calculation using a Generalized Gradient Approximation was used to determine the electronic structure and optical properties. The calculated total and partial densities of states indicate that the top of valance band is mainly built upon O-2p states with P-3p states via σ (P–O) interactions, and the low conduction bands mostly originates from Dy-5d. The results show that the monophosphate DyPO{sub 4} is an insulator with a calculated band gap (5.8 eV) closer to the experimental value (6.38 eV)
Band structure and itinerant magnetism in quantum critical NbFe2
Energy Technology Data Exchange (ETDEWEB)
Subedi, A. P. [University of Tennessee, Knoxville (UTK); Singh, David J [ORNL
2010-01-01
We report first-principles calculations of the band structure and magnetic ordering in the C14 Laves phase compound NbFe{sub 2}. The magnetism is itinerant in the sense that the moments are highly dependent on ordering. We find an overestimation of the magnetic tendency within the local spin-density approximation, similar to other metals near magnetic quantum critical points. We also find a competition between different magnetic states due to band-structure effects. These lead to competing magnetic tendencies due to competing interlayer interactions, one favoring a ferrimagnetic solution and the other an antiferromagnetic state. While the structure contains Kagome lattice sheets, which could, in principle, lead to strong magnetic frustration, the calculations do not show dominant nearest-neighbor antiferromagnetic interactions within these sheets. These results are discussed in relation to experimental observations.
Study on Band Structure of YbB6 and Analysis of Its Optical Conductivity Spectrum
Institute of Scientific and Technical Information of China (English)
无
2007-01-01
The electronic structure of YbB6 crystal was studied by means of density functional (GGA+U) method.The calculations were performed by FLAPW method.The high accurate band structure was achieved.The correlation between the feature of the band structure and the Yb-B6 bonding in YbB6 was analyzed.On this basis, some optical constants of YbB6 such as reflectivity, dielectric function, optical conductivity, and energy-loss function were calculated.The results are in good agreement with the experiments.The real part of the optical conductivity spectrum and the energy-loss function spectrum were analyzed in detail.The assignments of the spectra were carried out to correlate the spectral peaks with the interband electronic transitions, which justify the reasonable part of previous empirical assignments and renew the missed or incorrect ones.
QUANTITATIVE ANALYSIS OF BANDED STRUCTURES IN DUAL-PHASE STEELS
Directory of Open Access Journals (Sweden)
Benoit Krebs
2011-05-01
Full Text Available Dual-Phase (DP steels are composed of martensite islands dispersed in a ductile ferrite matrix, which provides a good balance between strength and ductility. Current processing conditions (continuous casting followed by hot and cold rolling generate 'banded structures' i.e., irregular, parallel and alternating bands of ferrite and martensite, which are detrimental to mechanical properties and especially for in-use properties. We present an original and simple method to quantify the intensity and wavelength of these bands. This method, based on the analysis of covariance function of binary images, is firstly tested on model images. It is compared with ASTM E-1268 standard and appears to be more robust. Then it is applied on real DP steel microstructures and proves to be sufficiently sensitive to discriminate samples resulting from different thermo-mechanical routes.
Electronic structure of the heavy fermion superconductor Ce2PdIn8: Experiment and calculations
International Nuclear Information System (INIS)
The electronic structure of a heavy-fermion superconductor Ce2PdIn8 was investigated by means of X-ray photoelectron spectroscopy (XPS) and ab initio density functional band structure calculations. The Ce 3d core-level XPS spectra point to stable trivalent configuration of Ce atoms that is also reproduced in the band structure calculations within the generalized gradient approximation GGA+U approach. Analysis of the 3d9f2 weight in the 3d XPS spectra within the Gunnarsson-Schönhammer model suggests that the onsite hybridization energy between Ce 4f and the conduction band states, Δfs, is ∼120 meV, which is about 30 meV larger than Δfs in isostructural Ce2TIn8 compounds with T = Co, Rh, and Ir. Taking into account a Coulomb repulsion U on both the Ce 4f and Pd 4d states in electronic band structure calculations, a satisfactory agreement was found between the calculated density of states (DOS) and the measured valence band XPS spectra. - Highlights: • XPS data validated strong electronic correlations in superconducting Ce2PdIn8. • DFT calculations reproduced XPS spectra measured for Ce2PdIn8. • Crucial role of Pd d electrons in the HF behavior of Ce2PdIn8 was established
Investigation of band structure of {sup 103,105}Rh using microscopic computational technique
Energy Technology Data Exchange (ETDEWEB)
Kumar, Amit, E-mail: akbcw2@gmail.com [Research Scholar, Department of Physics and Electronics, University of Jammu, Jammu-180006 (India); Singh, Suram, E-mail: suramsingh@gmail.com [Assistant Professor, Department of Physics Govt. Degree College, Kathua-184142 (India); Bharti, Arun, E-mail: arunbharti-2003@yahoo.co.in [Professor, Department of Physics and Electronics, University of Jammu, Jammu-180006 (India)
2015-08-28
The high-spin structure in {sup 61}Cu nucleus is studied in terms of effective two body interaction. In order to take into account the deformed BCS basis, the basis states are expanded in terms of the core eigenfunctions. Yrast band with some other bands havew been obtained and back-bending in moment of inertia has also been calculated and compared with the available experimental data for {sup 61}Cu nucleus. On comparing the available experimental as well as other theoretical data, it is found that the treatment with PSM provides a satisfactory explanation of the available data.
Directory of Open Access Journals (Sweden)
P. Kovacs
2010-04-01
Full Text Available The paper is focused on the automated design and optimization of electromagnetic band gap structures suppressing the propagation of surface waves. For the optimization, we use different global evolutionary algorithms like the genetic algorithm with the single-point crossover (GAs and the multi-point (GAm one, the differential evolution (DE and particle swarm optimization (PSO. The algorithms are mutually compared in terms of convergence velocity and accuracy. The developed technique is universal (applicable for any unit cell geometry. The method is based on the dispersion diagram calculation in CST Microwave Studio (CST MWS and optimization in Matlab. A design example of a mushroom structure with simultaneous electromagnetic band gap properties (EBG and the artificial magnetic conductor ones (AMC in the required frequency band is presented.
The role of high-level calculations in the assignment of the Q-band spectra of chlorophyll
Energy Technology Data Exchange (ETDEWEB)
Reimers, Jeffrey R. [School of Physics and Materials Science, The University of Technology, Sydney NSW (Australia); Cai, Zheng-Li [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane QLD4001 (Australia); Kobayashi, Rika [Australian National University Supercomputer Facility, Mills Rd, Canberra, ACT 0200 (Australia); Rätsep, Margus [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia); Freiberg, Arvi [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia and Institute of Molecular and Cell Biology, University of Tartu, Riia 23, 51010 Tartu (Estonia); Krausz, Elmars [Research School of Chemistry, The Australian National University, Canberra 2601 (Australia)
2014-10-06
We recently established a novel assignment of the visible absorption spectrum of chlorophyll-a that sees the two components Q{sub x} and Q{sub y} of the low-energy Q band as being intrinsically mixed by non-adiabatic coupling. This ended 50 years debate as to the nature of the Q bands, with prior discussion poised only in the language of the Born-Oppenheimer and Condon approximations. The new assignment presents significant ramifications for exciton transport and quantum coherence effects in photosystems. Results from state of the art electronic structure calculations have always been used to justify assignments, but quantitative inaccuracies and systematic failures have historically limited usefulness. We examine the role of CAM-B3LYP time-dependent density-functional theory (TD-DFT) and Symmetry Adapted Cluster-Configuration Interaction (SAC-CI) calculations in first showing that all previous assignments were untenable, in justifying the new assignment, in making some extraordinary predictions that were vindicated by the new assignment, and in then identifying small but significant anomalies in the extensive experimental data record.
Development of X-band accelerating structures for high gradients
Institute of Scientific and Technical Information of China (English)
S. Bini; M. G. Grimaldi; L. Romano; F. Ruffino; R. Parodi; V. Chimenti; A. Marcelli; L. Palumbo; B. Spataro; V. A. Dolgashev; S. Tantawi; A.D. Yeremian; Y. Higashi
2012-01-01
Short copper standing wave (SW) structures operating at an X-band frequency have been recently designed and manufactured at the Laboratori Nazionali di Frascati of the Istituto Nazionale di Fisica Nucleare (INFN) using the vacuum brazing technique.High power tests of the structures have been performed at the SLAC National Accelerator Laboratory.In this manuscript we report the results of these tests and the activity in progress to enhance the high gradient performance of the next generation of structures,particularly the technological characterization of high performance coatings obtained via molybdenum sputtering.
Engineering Design of a Multipurpose X-band Accelerating Structure
Gudkov, Dmitry; Samoshkin, Alexander; Zennaro, Riccardo; Dehler, Micha; Raguin, Jean-Yves
2010-01-01
Both FEL projects, SwissFEL and Fermi-Elettra each require an X-band RF accelerating structure for optimal bunch compression at the respective injectors. As the CLIC project is pursuing a program for producing and testing the X-band high-gradient RF structures, a collaboration between PSI, Elettra and CERN has been established to build a multipurpose X-band accelerating structure. This paper focuses on its engineering design, which is based on the disked cells jointed together by diffusion bonding. Vacuum brazing and laser beam welding is used for auxiliary components. The accelerating structure consists of two coupler subassemblies, 73 disks and includes a wakefield monitor and diagnostic waveguides. The engineering study includes the external cooling system, consisting of two parallel cooling circuits and an RF tuning system, which allows phase advance tuning of the cell by deforming the outer wall. The engineering solution for the installation and sealing of the wake field monitor feed-through devices that...
Ultrafast Band Structure Control of a Two-Dimensional Heterostructure.
Ulstrup, Søren; Čabo, Antonija Grubišić; Miwa, Jill A; Riley, Jonathon M; Grønborg, Signe S; Johannsen, Jens C; Cacho, Cephise; Alexander, Oliver; Chapman, Richard T; Springate, Emma; Bianchi, Marco; Dendzik, Maciej; Lauritsen, Jeppe V; King, Phil D C; Hofmann, Philip
2016-06-28
The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and interlayer interactions. Here, using time- and angle-resolved photoemission, we are able to isolate both the layer-resolved band structure and, more importantly, the transient band structure evolution of a model 2D heterostructure formed of a single layer of MoS2 on graphene. Our results reveal a pronounced renormalization of the quasiparticle gap of the MoS2 layer. Following optical excitation, the band gap is reduced by up to ∼400 meV on femtosecond time scales due to a persistence of strong electronic interactions despite the environmental screening by the n-doped graphene. This points to a large degree of tunability of both the electronic structure and the electron dynamics for 2D semiconductors embedded in a van der Waals-bonded heterostructure. PMID:27267820
Tripathi, A. K.; Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.
2016-04-01
Electron pitch angle (Dαα) and momentum (Dpp) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L = 4.6 and 6.8 for electron energies ≤10 keV. Landau (n = 0) resonance and cyclotron harmonic resonances n = ±1, ±2, … ±5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (α) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n = +1 and n = +2. A major contribution to momentum diffusion coefficients appears from n = +2. However, the banded structures in Dαα and Dpp coefficients appear only in the profile of diffusion coefficients for n = +2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The Dpp diffusion coefficient for ECH waves is one to two orders smaller than Dαα coefficients. For chorus waves, Dpp coefficients are about an order of magnitude smaller than Dαα coefficients for the case n ≠ 0. In case of Landau resonance, the values of Dpp coefficient are generally larger than the values of Dαα coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89° and harmonic resonances n = +1, +2, and +3, whereas for whistler mode waves, the frequencies have been calculated for angle 10° and Landau
Calculating merit increases: a structured approach.
Seithel, W W; Emans, J S
1983-01-01
Determining the amount of salary increase appropriate for each employee poses a major dilemma for many human resources managers and/or compensation managers (not to mention the employee's supervisor). This task requires complying with the company's compensation philosophy, meeting market competition, and rewarding employees fairly and equitably. Authors William W. Seithel, vice president, personnel of the Midwest Stock Exchange, Inc., and Jeff S. Emans, director, employee compensation of the Kemper Group, describe a method for pinpointing a salary rate increase that is not only structured enough to move people through the salary range in accordance with a reward philosophy, but precise enough to provide a basis for projecting costs and flexible enough to meet the needs of various performance levels. The method entails the use of a structured matrix that spells out the target percentage raises for various levels of performance. By using both the matrix-which is constructed to meet the individual company's needs-and a guide chart provided by the authors, it is possible to calculate a specific percentage increase for each employee. The manager who uses this system will find that the matrix is a mechanism for control as well as a means for projecting costs. PMID:10262948
Density functional calculation of equilibrium geometry and electronic structure of pyrite
Institute of Scientific and Technical Information of China (English)
邱冠周; 肖奇; 胡岳华; 徐竞
2001-01-01
The equilibrium geometry and electronic structure of pyrite has been studied using self-consistent density-functional theory within the local density approximation (LDA). The optimum bulk geometry is in good agreement with crystallographic data. The calculated band structure and density of states in the region around the Fermi energy show that valence-band maximum (VBM) is at X (100), and the conduction-band minimum (CBM) is at G (000). The indirect and direct band gaps are 0.6eV and 0.74eV, respectively. The calculated contour map of difference of charge density shows excess charge in nonbonding d electron states on the Fe sites. The density increases between sulfur nuclei and between iron and sulfur nuclei qualitatively reveal that S-S bond and Fe-S bond are covalent binding.
The structure of rotational bands in alpha-cluster nuclei
Directory of Open Access Journals (Sweden)
Bijker Roelof
2015-01-01
Full Text Available In this contribution, I discuss an algebraic treatment of alpha-cluster nuclei based on the introduction of a spectrum generating algebra for the relative motion of the alpha-clusters. Particular attention is paid to the discrete symmetry of the geometric arrangement of the α-particles, and the consequences for the structure of the rotational bands in the 12C and 16O nuclei.
Parameterization and algebraic structure of 3-band orthogonal wavelet systems
Institute of Scientific and Technical Information of China (English)
无
2001-01-01
In this paper, a complete parameterization for the 3-band compact wavelet systems is presented. Using the parametric result, a program of the filterbank design is completed, which can give not only the filterbanks but also the graphs of all possible scaling functions and their corresponding wavelets. Especially some symmetric wavelets with small supports are given. Finally an algebraic structure for this kind of wavelet systems is characterized.
DEFF Research Database (Denmark)
Lu, Jing Tao; Christensen, Rasmus Bjerregaard; Foti, Giuseppe;
2014-01-01
We extend the simple and efficient lowest order expansion (LOE) for inelastic electron tunneling spectroscopy (IETS) to include variations in the electronic structure on the scale of the vibration energies. This enables first-principles calculations of IETS line shapes for molecular junctions close...
Study of electronic structures and absorption bands of BaMgF4 crystal with F colour centre
Institute of Scientific and Technical Information of China (English)
Kang Ling-Ling; Liu Ting-Yu; Zhang Qi-Ren; Xu Ling-Zhi; Zhang Fei-Wu
2011-01-01
The electronic structures of BaMgF4 crystals containing an F colour centre are studied within the framework of the fully relativistic self-consistent Direc-Slate-theory, using a numerically discrete variational (DV-Xα)method. It is concluded from the calculated results that the energy levels of the F colour centre are located in the forbidden band.The optical transition energy from the ground state to the excited state for the F colour centre is about 5.12 eV, which corresponds to the 242-nm absorption band. These calculated results can explain the origin of the absorption bands.
Calculation of bipolar injection and recombination in MNOS structure
Energy Technology Data Exchange (ETDEWEB)
Gadiyak, G.V.; Obrekht, M.S.; Sinitsa, S.P.
1986-07-01
The authors calculate the process of polarization of MNOS structure under conditions of bipolar injection and recombination and calculate the basic features of the behavior of the current and the trapped charge in the process of polarization. The authors also propose that the electrons and holes tunnel directly into the conduction band of the nitride so that the tunneling is determined by the quasiclassical probability of sub-barrier transmission. Comparison with experimental data shows that the calculation describes only the exponential dependence of the time up to breakdown on the applied electric field. Quantitative agreement requires substantial lowering of the magnitude of the hole current flowing through the triangular barrier. On the basis of the model of the Si/sub 3/N/sub 4/-Al contact studied, this cannot be achieved because of the magnitude of the Si/sub 3/N/sub 4/-Al is probably more complicated, possibly because of the formation of intermediate AlN and Al/sub 2/O/sub 3/ phases.
New band structures and an unpaired crossing in {sup 78}Kr
Energy Technology Data Exchange (ETDEWEB)
Sun, H.; Doering, J.; Johns, G.D.; Kaye, R.A.; Solomon, G.Z.; Tabor, S.L. [Department of Physics, Florida State University, Tallahassee, Florida 32306 (United States); Doering, J. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Devlin, M.; LaFosse, D.R.; Lerma, F.; Sarantites, D.G. [Department of Chemistry, Washington University, St. Louis, Missouri 63130 (United States); Baktash, C.; Rudolph, D.; Yu, C. [Physics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Lee, I.Y.; Macchiavelli, A.O. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Birriel, I.; Saladin, J.X.; Winchell, D.F.; Wood, V.Q. [Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States); Ragnarsson, I. [Department of Mathematical Physics, Lund Institute of Technology, S-22100 Lund (Sweden)
1999-02-01
High-spin states in {sup 78}Kr were studied using the {sup 58}Ni({sup 23}Na,3p) reaction at 70 MeV and the {sup 58}Ni({sup 28}Si,{alpha}4p) reaction at 130 MeV. Prompt {gamma}-{gamma} coincidences were measured using the Pitt-FSU detector array and the GAMMASPHERE-MICROBALL array. Results from these experiments have led to 26 new excitation levels, some of which have been grouped into 3 new bands. Spins were assigned based on directional correlations of oriented nuclei. Two of the new negative-parity bands appear to form a signature-partner pair based on a two-quasineutron structure, in contrast to the previously known two-quasiproton negative-parity bands. A forking has been observed at the 24{sup +} state in the yrast band, which calculations suggest may result from an unpaired crossing. The available evidence suggests oblate shapes in the yrast band coexist with prolate shapes in the negative-parity bands. {copyright} {ital 1999} {ital The American Physical Society}
New band structures and an unpaired crossing in {sup 78}Kr
Energy Technology Data Exchange (ETDEWEB)
Sun, H.; Doring, J.; Johns, R.A.; Solomon, G.; Tabor, S.; Devlin, M.; LaFosse, D.; Lerma, F.; Sarantites, D.; Baktash, C.; Rudolph, D.; Yu, C.H.; Lee, I.Y.; Macchiavelli, A.; Birriel, I.; Saladin, J.; Winchell, D.; Wood, V.Q.; Ragnarsson, I.
1998-07-06
High-spin states in {sup 78}Kr were studied using the {sup 58}Ni({sup 23}Na,3p) reaction at 70 MeV and the {sup 58}Ni({sup 28}Si,{alpha}4p) reaction at 130 MeV. Prompt {gamma}-{gamma} coincidences were measured using the Pitt-FSU detector array and the GAMMASPHERE-MICROBALL array. Results from these experiments have led to 26 new excitation levels, some of which have been grouped into 3 new bands. Spins were assigned based on directional correlations of oriented nuclei. Two of the new negative-parity bands appear to form a signature-partner pair based on a two-quasineutron structure, in contrast to the previously known two-quasiproton negative-parity bands. A forking has been observed at the 24{sup +} state in the yrast band, which calculations suggest may result from an unpaired crossing. The available evidence suggests oblate shapes in the yrast band coexist with prolate shapes in the negative-parity bands.
Temperature-dependent band structure of Hg1-xZnxTe-CdTe superlattices
Manassès, J.; Guldner, Y.; Vieren, J. P.; Voos, M.; Faurie, J. P.
1991-12-01
We present transport and far-infrared magneto-optical measurements in narrow-band-gap n-type Hg1-xZnxTe-CdTe superlattices. Hall and conductivity data obtained over a broad temperature range (1.5-300 K) show that these superlattices are semimetallic at low temperature and are degenerate intrinsic semiconductors for T>100 K, which constitutes an interesting situation in semiconductor-superlattice physics. The analysis of the data gives the Fermi energy as well as the temperature-dependent band gap, in good agreement with the calculated band structure, which predicts a semimetal-semiconductor transition induced by temperature in these heterostructures. We have measured the electron cyclotron resonances as a function of temperature with the magnetic field B applied parallel and perpendicular to the growth axis. The observed magneto-optical intraband transitions are in very satisfactory agreement with the calculated Landau levels and the Fermi energy. We show that the semimetal-semiconductor transition is characterized by an important reduction of the cyclotron mass measured with B perpendicular to the superlattice growth axis. The large variation of the conduction-band anisotropy calculated near the transition accounts for this effect.
Momentum-dependent band spin splitting in semiconducting MnO2: a density functional calculation.
Noda, Yusuke; Ohno, Kaoru; Nakamura, Shinichiro
2016-05-11
Recently, manganese-oxide compounds have attracted considerable attention, in particular, as candidate materials for photochemical water-splitting reactions. Here, we investigate electronic states of pristine manganese dioxides (MnO2) in different crystal phases using spin-polarized density functional theory (DFT) with Hubbard U correction. Geometrical structures and band dispersions of α-, β-, δ-, and λ-MnO2 crystals with collinear magnetic [ferromagnetic (FM) and antiferromagnetic (AFM)] orders are discussed in detail. We reveal that penalty energies that arise by violating the Goodenough-Kanamori rule are important and the origin of the magnetic interactions of the MnO2 crystals is governed by the superexchange interactions of Mn-O-Mn groups. In addition, it is found that momentum-dependent band spin splitting occurs in the AFM α-, β-, and δ-MnO2 crystals while no spin splitting occurs in the AFM λ-MnO2 crystal. Our results show that spin-split band dispersions stem from the different orientations of Mn-centred oxygen octahedra. Such interesting electronic states of the MnO2 crystals are unraveled by our discussion on the relationship between the effective (spin-dependent) single-electron potentials and the space-group symmetry operations that map up-spin Mn atoms onto down-spin Mn atoms. This work provides a basis to understand the relationship between the spin-dependent electronic states and the crystallography of manganese oxides. Another relationship to the recent experimental observations of the photochemical oxygen evolution of MnO2 crystals is also discussed. PMID:27119122
Determination of the band structure of LuNi{sub 2}B{sub 2}C
Energy Technology Data Exchange (ETDEWEB)
Bergk, B. [Hochfeld-Magnetlabor, Forschungszentrum Rossendorf, Dresden (Germany); Inst. fuer Festkoerperphysik, Technische Univ. Dresden (Germany); Bartkowiak, M.; Ignatchik, O. [Hochfeld-Magnetlabor, Forschungszentrum Rossendorf, Dresden (Germany); Jaeckel, M. [Inst. fuer Festkoerperphysik, Technische Univ. Dresden (Germany); Wosnitza, J.; Rosner, H.; Petzold, V. [MPI fuer chemische Physik fester Stoffe, Dresden (Germany); Canfield, P. [Iowa State Univ. of Science and Technology, Ames (United States). Ames Lab., Condensed Matter Physics
2007-07-01
We present de Haas-van Alphen (dHvA) investigations on the nonmagnetic borocarbide superconductor LuNi{sub 2}B{sub 2}C which have been performed by use of the torque method in high magnetic fields up to 32 T and at low temperatures down to 50 mK. The complex band structure is extracted from the quantum oscillations in the normal state. In comparison with full-potential-local-orbital calculations of the band structure we are able to assign the observed dHvA frequencies to the different bands. Temperature dependent dHvA investigations allowed the extraction of the effective band masses for the several Fermi-surface sheets. We observe an enhancement of the effective masses compared to the theoretical calculations which is due to electron-phonon interaction. Finally, we are able to examine the angular dependence of the electron-phonon coupling for the different Fermi-surface sheets. (orig.)
Transport and band structure studies of crystalline ZnRh2O4
Energy Technology Data Exchange (ETDEWEB)
Mansourian-Hadavi, Negar; Wansom, Supaporn; Perry, Nicola H.; Nagaraja, Arpun R.; Mason, Thomas O.; Ye, Lin-hui; Freeman, Arthur J.
2010-02-17
We report the synthesis and characterization of non-d{sup 10} p-type transparent conducting oxides of the normal spinel ZnRh{sub 2}O{sub 4}. Undoped ZnRh{sub 2}O{sub 4} was successfully prepared by means of bulk solid-state synthesis. The conduction mechanism and bulk defect chemistry of polycrystalline sintered pellets of ZnRh{sub 2}O{sub 4} were studied through electrical conductivity and Seebeck coefficient measurements, in defect equilibrium at elevated temperature under controlled atmospheres. Optical diffuse reflectance measurements were also carried out to evaluate band gap. The data were analyzed in terms of an activated mobility (small polaron conduction), with a hopping energy of 0.25 eV. Results from band structure calculations by LDA+U and optical band-gap measurement by UV-visible spectrometry are in good agreement with literature data.
Aizawa, H.; Kuroki, K.; Yasuzuka, S.; Yamada, J.
2012-11-01
We perform a first-principles band calculation for a group of quasi-two-dimensional organic conductors β-(BDA-TTP)2MF6 (M = P, As, Sb and Ta). The ab-initio calculation shows that the density of states is correlated with the bandwidth of the singly occupied (highest) molecular orbital, while it is not necessarily correlated with the unit-cell volume. The direction of the major axis of the cross section of the Fermi surface lies in the Γ-B-direction, which differs from that obtained by the extended Hückel calculation. Then, we construct a tight-binding model which accurately reproduces the ab-initio band structure. The obtained transfer energies give a smaller dimerization than in the extended Hückel band. As to the difference in the anisotropy of the Fermi surface, the transfer energies along the inter-stacking direction are smaller than those obtained in the extended Hückel calculation. Assuming spin-fluctuation-mediated superconductivity, we apply random phase approximation to a two-band Hubbard model. This two-band Hubbard model is composed of the tight-binding model derived from the first-principles band structure and an on-site (intra-molecule) repulsive interaction taken as a variable parameter. The obtained superconducting gap changes sign four times along the Fermi surface like in a d-wave gap, and the nodal direction is different from that obtained in the extended Hückel model. Anion dependence of Tc is qualitatively consistent with the experimental observation.
Band structure and electron-phonon coupling in H3S : A tight-binding model
Ortenzi, L.; Cappelluti, E.; Pietronero, L.
2016-08-01
We present a robust tight-binding description, based on the Slater-Koster formalism, of the band structure of H3S in the Im3 ¯m structure, stable in the range of pressure P =180 -220 GPa. We show that the interatomic hopping between the 3 s and 3 p orbitals (and partially between the 3 p orbitals themselves) of sulfur is fundamental to capturing the relevant physics associated with the Van Hove singularities close to the Fermi level. Comparing the model so defined with density functional theory calculations we obtain a very good agreement not only of the overall band structure but also of the low-energy states and the Fermi surface properties. The description in terms of Slater-Koster parameters permits us also to evaluate at a microscopic level a hopping-resolved linear electron-lattice coupling which can be employed for further tight-binding analyses also at a local scale.
Low-lying levels and high-spin band structures in sup 1 sup 0 sup 2 Rh
Gizon, J; Timar, J; Cata-Danil, G; Nyakó, B M; Zolnai, L; Boston, A J; Joss, D T; Paul, E S; Semple, A T; O'Brien, N J; Parry, C M; Bucurescu, D; Brant, S; Paar, V
1999-01-01
Levels in sup 1 sup 0 sup 2 Rh have been populated in the reaction sup 7 sup 0 Zn+ sup 3 sup 6 S at 130 MeV. The level structure of sup 1 sup 0 sup 2 Rh has been investigated using the EUROGAM II array. Low-lying states and four high-spin bands have been identified. The configurations of low-lying levels and two-quasiparticle bands are interpreted in the frame of the interacting boson-fermion-fermion model. The four observed band structures are also compared with cranked shell model calculations using a modified oscillator potential.
Indian Academy of Sciences (India)
ERMAMATOV M J; YÉPEZ-MARTÍNEZ H; SRIVASTAVA P C
2016-05-01
The band structure of the proton-odd nuclei $^{153,155}$Eu, built on Nilsson orbitals, is investigated within the framework of a recently developed extended Bohr Hamiltonian model. The relative distance between spherical orbitals is taken into account by considering single-particle energies as a parameter which changes with increasing neutron number. Energy levels of each band and$B(E2)$ values inside the ground-state band are calculated and compared with the available experimental data. Thus, more comprehensive information on the structure of deformed nuclei can be obtained by studying the rotation–vibration spectra of odd nuclei built on Nilsson single-particle orbitals.
Energy Technology Data Exchange (ETDEWEB)
Dabhi, Shweta, E-mail: venu.mankad@gmail.com; Mankad, Venu, E-mail: venu.mankad@gmail.com; Jha, Prafulla K., E-mail: venu.mankad@gmail.com [Department of Physics, Maharaja Krishnakumasinhji Bhavnagar University, Bhavnagar-364001 (India)
2014-04-24
A detailed theoretical study of structural, electronic and Vibrational properties of BeX compound is presented by performing ab-initio calculations based on density-functional theory using the Espresso package. The calculated value of lattice constant and bulk modulus are compared with the available experimental and other theoretical data and agree reasonably well. BeX (X = S,Se,Te) compounds in the ZB phase are indirect wide band gap semiconductors with an ionic contribution. The phonon dispersion curves are represented which shows that these compounds are dynamically stable in ZB phase.
Deguchi, Daiki; Sato, Kazunori; Kino, Hiori; Kotani, Takao
2016-05-01
We have recently implemented a new version of the quasiparticle self-consistent GW (QSGW) method in the ecalj package released at http://github.com/tkotani/ecalj. Since the new version of the ecalj package is numerically stable and more accurate than the previous versions, we can perform calculations easily without being bothered with tuning input parameters. Here we examine its ability to describe energy band properties, e.g., band-gap energy, eigenvalues at special points, and effective mass, for a variety of semiconductors and insulators. We treat C, Si, Ge, Sn, SiC (in 2H, 3C, and 4H structures), (Al, Ga, In) × (N, P, As, Sb), (Zn, Cd, Mg) × (O, S, Se, Te), SiO2, HfO2, ZrO2, SrTiO3, PbS, PbTe, MnO, NiO, and HgO. We propose that a hybrid QSGW method, where we mix 80% of QSGW and 20% of LDA, gives universally good agreement with experiments for these materials.
Electronic structure calculations of rare-earth intermetallic compound YAg using ab initio methods
Institute of Scientific and Technical Information of China (English)
(S).U(g)ur; G.U(g)ur; F.Soyalp; R.Ellialtio(g)lu
2009-01-01
The structural,elastic and electronic properties of YAg-B2(CsC1) were investigated using the first-principles calculations.The energy band structure and the density of states were studied in detail,including partial density of states (PDOS),in order to identify the character of each band.The structural parameters (lattice constant,bulk modulus,pressure derivative of bulk modulus) and elastic constants were also obtained.The results were consistent with the experimental data available in the literature,as well as other theoretical results.
Theoretical calculations on structural and electronic properties of BGaAsBi alloys
Aslan, Metin; Yalcin, Battal G.; Ustundag, Mehmet; Bagci, Sadik
2015-11-01
The structural and electronic properties of cubic B x Ga1- x As1- y Bi y alloys with bismuth (Bi) concentration of 0.0625, 0.125, 0.1875 and 0.25 are studied with various boron (B) compositions by means of density functional theory (DFT) within the Wu-Cohen (WC) exchange correlation potential based on generalized gradient approximation (GGA). For all studied alloy structures, we have implemented geometric optimization before the volume optimization calculations. The obtained equilibrium lattice constants and band gap of studied quaternary alloys are investigated for the first time in literature. While the lattice constant behavior changes linearly with boron concentration, increasing small amount of bismuth concentration alter the lattice constant nonlinearly. The present calculation shows that the band gap decreases with increasing bismuth concentration and direct band gap semiconductor alloy became an indirect band gap with increasing boron concentration. From the band offset calculation we have shown that increasing B and Bi concentration in host GaAs reduced the valance band offset in a heterostructure formed by GaAs and studied alloys.
Electronic band structure of the layered compound Td-WTe2
Augustin, J.; Eyert, V.; Böker, Th.; Frentrup, W.; Dwelk, H.; Janowitz, C.; Manzke, R.
2000-10-01
We have studied the electronic structure of the layered compound Td-WTe2 experimentally using high-resolution angle-resolved photoelectron spectroscopy, and theoretically using density-functional based augmented spherical wave calculations. Comparison of the measured and calculated data shows in general good agreement. The theoretical results reveal the semimetallic as well as metallic character of Td-WTe2; the semimetallic character is due to a 0.5 eV overlap of Te 5p- and W 5d-like bands along Γ-Y, while the metallic character is due to two classical metallic bands. The rather low conductivity of Td-WTe2 is interpreted as resulting from a low density of states at the Fermi level.
Collective Band Structures in Neutron-Rich 108Mo Nucleus
Institute of Scientific and Technical Information of China (English)
DING Huai-Bo; WANG Jian-Guo; XU Qiang; ZHU Sheng-Jiang; J. H. Hamilton; A. V. Ramayya; J. K. Hwang; Y. X. Luo; J. O. Rasmussen; I. Y. Lee; CHE Xing-Lai
2007-01-01
High spin states in the neutron-rich 108Mo nucleus are studied by measuring prompt γ-rays following the spontaneous fission of 252Cf with a Gammasphere detector array. The ground-state band is confirmed, and the one-phonon γ-vibrational band is updated with spin up to 12 h. A new collective band with the band head level at 1422.4 keV is suggested as a two-phonon γ-vibrational band. Another new band is proposed as a two-quasi-proton excitation band. Systematic characteristics of the collective bands are discussed.
Energy Technology Data Exchange (ETDEWEB)
Gladysiewicz, M.; Wartak, M. S. [Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)
2015-08-07
The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 10{sup 18 }cm{sup −3}, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be used to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ε = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga{sub 0.47}In{sub 0.53}As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.
Lawrence, Felix J; Dossou, Kokou B; McPhedran, R C; de Sterke, C Martijn
2011-01-01
We present a flexible method that can calculate Bloch modes, complex band structures, and impedances of two-dimensional photonic crystals from scattering data produced by widely available numerical tools. The method generalizes previous work which relied on specialized multipole and FEM techniques underpinning transfer matrix methods. We describe the numerical technique for mode extraction, and apply it to calculate a complex band structure and to design two photonic crystal antireflection coatings. We do this for frequencies at which other methods fail, but which nevertheless are of significant practical interest.
16O + 16O molecular structures of positive- and negative-parity superdeformed bands in 34S
Directory of Open Access Journals (Sweden)
Taniguchi Yasutaka
2016-01-01
Full Text Available The structures of excited states in 34S are investigated using the antisymmetrized molecular dynamics and generator coordinate method(GCM. The GCM basis wave functions are calculated via energy variation with a constraint on the quadrupole deformation parameter β. By applying the GCM after parity and angular momentum projections, the coexistence of two positive- and one negative-parity super de formed(SD bands are predicted, and low-lying states and other deformed bands are obtained. The SD bands have structures of 16O + 16O + two valence neutrons in molecular orbitals around the two 16O cores in a cluster picture. The configurations of the two valence neutrons are δ2 and π2 for the positive-parity SD bands and π1δ1 for the negative parity SD band.
QUANTUM-MECHANICAL MODELING OF SPATIAL AND BAND STRUCTURE OF Y3AL5O12 SCINTILLATION CRYSTAL
Directory of Open Access Journals (Sweden)
I. I. Vrubel
2016-05-01
Full Text Available Spatial and electronic structures of a unit cell of yttrium-aluminum garnet have been studied. Quantum-mechanical model have been presented. Semi-empirical methods PM6 and PM7 have been used for geometry optimization of the crystal unit cell. Band structure has been calculated within density functional theory with the use of PBE exchange-correlation functional. Histograms of metal-oxygen distances for equilibrium geometry have been constructed. Comparison of the used methods has been carried out and recommendation about their applicability for such problems was given. The single-particle wave functions and energies have been calculated. The bandgap was estimated. The band structure was plotted. It was shown that the method gives reliable results for spatial and band structure of Y3Al5O12 scintillation crystal. The results of this work can be used for improvement of characteristics of garnet scintillation crystals.
Fluid-structure interaction calculations using a linear perturbation method
International Nuclear Information System (INIS)
Aim of the work is to present and validate FSI (Fluid-Structure Interaction) calculations by using a linear perturbation method and commercial Computational Fluid Dynamics (CFD) and structural analysis codes. Star-CD is used for CFD calculations and ABAQUS for structural analysis. The external MpCCI code is used for coupling the CFD and structural analysis codes
Band structure and optical properties of amber studied by first principles
Energy Technology Data Exchange (ETDEWEB)
Rao, Zhi-Fan, E-mail: raozhifan@163.com [Analysis and Testing Center of Yunnan, Kunming University of Science and Technology, Kunming 650093 (China); Zhou, Rong-Feng [Analysis and Testing Center of Yunnan, Kunming University of Science and Technology, Kunming 650093 (China)
2013-03-01
The band structure and density of states of amber is studied by the first principles calculation based on density of functional theory. The complex structure of amber has 214 atoms and the band gap is 5.0 eV. The covalent bond is combined C/O atoms with H atoms. The O 2p orbital is the biggest effect near the Fermi level. The optical properties' results show that the reflectivity is low, and the refractive index is 1.65 in visible light range. The highest absorption coefficient peak is at 172 nm and another higher peak is at 136 nm. These convince that the amber would have a pretty sheen and that amber is a good and suitable crystal for jewelry and ornaments.
Deformed configurations, band structures and spectroscopic properties of = 50 Ge and Se nuclei
Indian Academy of Sciences (India)
S K Ghorui; C R Praharaj
2014-04-01
The deformed configurations and rotational band structures in =50 Ge and Se nuclei are studied by deformed Hartree–Fock with quadrupole constraint and angular momentum projection. Apart from the `almost’ spherical HF solution, a well-deformed configuration occurs at low excitation. A deformed well-mixed = 1/2+ neutron orbit comes down in energy (from the shell above = 50) to break the = 50 spherical shell closure. A = 7− isomer is predicted in 84Se at fairly low excitation energy. At higher excitation energies (8 MeV), a deformed band with = 7/2+–1/2− (based on $h_{11/2}$) neutron 1p–1h excitation, for 82Ge and 84Se, is shown in our calculation. Our study gives insight into possible deformed structures at spherical shell closure.
Band gap and chemically ordered domain structure of a graphene analogue BCN
Venu, K.; Kanuri, S.; Raidongia, K.; Hembram, K. P. S. S.; Waghmare, U. V.; Datta, R.
2010-12-01
Chemically synthesized few layer graphene analogues of B xC yN z are characterized by aberration corrected transmission electron microscopy and high resolution electron energy loss spectroscopy (HREELS) to determine the local phase, electronic structure and band gap. HREELS band gap studies of a B xC yN z composition reveal absorption edges at 2.08, 3.43 and 6.01 eV, indicating that the B xC yN z structure may consist of domains of different compositions. The K-absorption edge energy position of the individual elements in B xC yN z is determined and compared with h-BN and graphite. An understanding of these experimental findings is developed with complementary first-principles based calculations of the various ordered configurations of B xC yN z.
Energy Technology Data Exchange (ETDEWEB)
1991-12-31
This report briefly summaries our research accomplishments made during the period of July 1, 1989 to December 13, 1991. A number of significant progresses were achieved in our studies of several different classes of low-dimensional solid state materials. On the basis of tight-binding band electronic structure calculations, we investigated the electronic properties of various organic conducting salts, cuprate superconductors, and transition-metal oxide and chalcogenide metals to find structure-property correlations governing of the physical properties of these low-dimensional materials. By employing a number of different quality basis sets, we also carried out extensive ab initio SCF-MO/MP2 calculations on model molecular systems to accurately describe the weak intermolecular contact interactions governing the structures of organic donor slats and molecular crystals. Our research efforts led to about 80 publications and two important computer programs.
Energy Technology Data Exchange (ETDEWEB)
1991-01-01
This report briefly summaries our research accomplishments made during the period of July 1, 1989 to December 13, 1991. A number of significant progresses were achieved in our studies of several different classes of low-dimensional solid state materials. On the basis of tight-binding band electronic structure calculations, we investigated the electronic properties of various organic conducting salts, cuprate superconductors, and transition-metal oxide and chalcogenide metals to find structure-property correlations governing of the physical properties of these low-dimensional materials. By employing a number of different quality basis sets, we also carried out extensive ab initio SCF-MO/MP2 calculations on model molecular systems to accurately describe the weak intermolecular contact interactions governing the structures of organic donor slats and molecular crystals. Our research efforts led to about 80 publications and two important computer programs.
Towards structural integration of airborne Ku-band SatCom antenna
Schippers, Harmen; Verpoorte, Jaco; Hulzinga, Adriaan; Roeloffzen, Chris; Baggen, Rens
2013-01-01
The paper describes research towards a fully structurally integrated Ku-band SatCom antenna. This antenna covers the complete receive band for aeronautical earth stations and DVB-S broadcast in Ku band (10.7 - 12.75 GHz). The antenna front-end consists of 32 tiles where each tile has 8×8 Ku-band sta
Szczęśniak, Dominik; Ennaoui, Ahmed; Ahzi, Saïd
2016-09-01
Recently, the transition metal dichalcogenides have attracted renewed attention due to the potential use of their low-dimensional forms in both nano- and opto-electronics. In such applications, the electronic and transport properties of monolayer transition metal dichalcogenides play a pivotal role. The present paper provides a new insight into these essential properties by studying the complex band structures of popular transition metal dichalcogenide monolayers (MX 2, where M = Mo, W; X = S, Se, Te) while including spin-orbit coupling effects. The conducted symmetry-based tight-binding calculations show that the analytical continuation from the real band structures to the complex momentum space leads to nonlinear generalized eigenvalue problems. Herein an efficient method for solving such a class of nonlinear problems is presented and yields a complete set of physically relevant eigenvalues. Solutions obtained by this method are characterized and classified into propagating and evanescent states, where the latter states manifest not only monotonic but also oscillatory decay character. It is observed that some of the oscillatory evanescent states create characteristic complex loops at the direct band gap of MX 2 monolayers, where electrons can directly tunnel between the band gap edges. To describe these tunneling currents, decay behavior of electronic states in the forbidden energy region is elucidated and their importance within the ballistic transport regime is briefly discussed. PMID:27367475
Szczęśniak, Dominik; Ennaoui, Ahmed; Ahzi, Saïd
2016-09-01
Recently, the transition metal dichalcogenides have attracted renewed attention due to the potential use of their low-dimensional forms in both nano- and opto-electronics. In such applications, the electronic and transport properties of monolayer transition metal dichalcogenides play a pivotal role. The present paper provides a new insight into these essential properties by studying the complex band structures of popular transition metal dichalcogenide monolayers (MX 2, where M = Mo, W; X = S, Se, Te) while including spin-orbit coupling effects. The conducted symmetry-based tight-binding calculations show that the analytical continuation from the real band structures to the complex momentum space leads to nonlinear generalized eigenvalue problems. Herein an efficient method for solving such a class of nonlinear problems is presented and yields a complete set of physically relevant eigenvalues. Solutions obtained by this method are characterized and classified into propagating and evanescent states, where the latter states manifest not only monotonic but also oscillatory decay character. It is observed that some of the oscillatory evanescent states create characteristic complex loops at the direct band gap of MX 2 monolayers, where electrons can directly tunnel between the band gap edges. To describe these tunneling currents, decay behavior of electronic states in the forbidden energy region is elucidated and their importance within the ballistic transport regime is briefly discussed.
Szczęśniak, Dominik; Ennaoui, Ahmed; Ahzi, Saïd
2016-09-01
Recently, the transition metal dichalcogenides have attracted renewed attention due to the potential use of their low-dimensional forms in both nano- and opto-electronics. In such applications, the electronic and transport properties of monolayer transition metal dichalcogenides play a pivotal role. The present paper provides a new insight into these essential properties by studying the complex band structures of popular transition metal dichalcogenide monolayers (MX 2, where M = Mo, W; X = S, Se, Te) while including spin–orbit coupling effects. The conducted symmetry-based tight-binding calculations show that the analytical continuation from the real band structures to the complex momentum space leads to nonlinear generalized eigenvalue problems. Herein an efficient method for solving such a class of nonlinear problems is presented and yields a complete set of physically relevant eigenvalues. Solutions obtained by this method are characterized and classified into propagating and evanescent states, where the latter states manifest not only monotonic but also oscillatory decay character. It is observed that some of the oscillatory evanescent states create characteristic complex loops at the direct band gap of MX 2 monolayers, where electrons can directly tunnel between the band gap edges. To describe these tunneling currents, decay behavior of electronic states in the forbidden energy region is elucidated and their importance within the ballistic transport regime is briefly discussed.
Institute of Scientific and Technical Information of China (English)
Yang Ping; Li Pei; Zhang Li-Qiang; Wang Xiao-Liang; Wang Huan; Song Xi-Fu; Xie Fang-Wei
2012-01-01
The lattice,the band gap and the optical properties of n-type ZnO under uniaxial stress are investigated by firstprinciples calculations.The results show that the lattice constants change linearly with stress.Band gaps are broadened linearly as the uniaxial compressive stress increases.The change of band gap for n-type ZnO comes mainly from the contribution of stress in the c-axis direction,and the reason for band gap of n-type ZnO changing with stress is also explained.The calculated results of optical properties reveal that the imaginary part of the dielectric function decreases with the increase of uniaxial compressive stress at low energy.However,when the energy is higher than 4.0 eV,the imaginary part of the dielectric function increases with the increase of stress and a blueshift appears.There are two peaks in the absorption spectrum in an energy range of 4.0-13.0 eV.The stress coefficient of the band gap of n-type ZnO is larger than that of pure ZnO,which supplies the theoretical reference value for the modulation of the band gap of doped ZnO.
Block Tridiagonal Matrices in Electronic Structure Calculations
DEFF Research Database (Denmark)
Petersen, Dan Erik
is developed and compared to standard Gaussian elimination, where it is shown to be qualitatively quicker for the task of determining the block tridiagonal portion of the Green’s function matrix. The Sweep algorithm is then parallelized via a straightforward approach in order to enable moderate speedup...... and memory distribution. The well known block cyclic reduction algorithm first developed by Gene Golub is then presented and analyzed for further expanding our parallel options, and finally a new hybrid method that combines block cyclic reduction and a form of Schur complement calculation is introduced...... in the Landauer–Büttiker ballistic transport regime. These calculations concentrate on determining the so– called Green’s function matrix, or portions thereof, which is the inverse of a block tridiagonal general complex matrix. To this end, a sequential algorithm based on Gaussian elimination named Sweeps...
First principle calculations of structural phase transition and electronic properties in AmTe
Energy Technology Data Exchange (ETDEWEB)
Pataiya, Jagdeesh, E-mail: jagdish-pet@yahoo.co.in; Makode, C. [Sagar Institute of Research & Technology, Bhopal, 462041 (India); Aynyas, Mahendra [Department of Physics, C.S.A. Govt. P.G. College, Sehore, 466001 (India); Singh, A.; Sanyal, S. P. [Department of Physics, Barkatullah University, Bhopal, 462026 (India)
2015-06-24
The tight-binding linear muffin-tin orbital (TB-LMTO) with in the local density approximation is used to calculate total energy, lattice parameters, bulk modulus, density of states and energy band structure of americium telluride at ambient as well as at high pressure. It is found that AmTe is stable in NaCl – type structure under ambient pressure. The phase transition pressure was found to be 15.0 GPa from NaCl-type (B{sub 1}-phase) structure to CsCl-type (B{sub 2}-phase) structure for this compound. From energy band diagram it is observed that AmTe exhibit metallic behaviour. The calculated ground state properties such as lattice parameters and bulk modulus are in general good agreement with the available results.
Kobayashi, Hajime; Kobayashi, Norihito; Hosoi, Shizuka; Koshitani, Naoki; Murakami, Daisuke; Shirasawa, Raku; Kudo, Yoshihiro; Hobara, Daisuke; Tokita, Yuichi; Itabashi, Masao
2013-07-01
Hopping and band mobilities of holes in organic semiconductors at room temperature were estimated from first principle calculations. Relaxation times of charge carriers were evaluated using the acoustic deformation potential model. It is found that van der Waals interactions play an important role in determining accurate relaxation times. The hopping mobilities of pentacene, rubrene, and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) in bulk single crystalline structures were found to be smaller than 4 cm2/Vs, whereas the band mobilities were estimated between 36 and 58 cm2/Vs, which are close to the maximum reported experimental values. This strongly suggests that band conductivity is dominant in these materials even at room temperature.
Calculation of moments of structure functions
International Nuclear Information System (INIS)
The progress on the lattice computation of low moments of both the unpolarised and polarised nucleon structure functions is reviewed with particular emphasis on continuum and chiral extrapolations and comparison between quenched and unquenched fermions. (orig.)
Superlattice band structure: New and simple energy quantification condition
International Nuclear Information System (INIS)
Assuming an approximated effective mass and using Bastard's boundary conditions, a simple method is used to calculate the subband structure for periodic semiconducting heterostructures. Our method consists to derive and solve the energy quantification condition (EQC), this is a simple real equation, composed of trigonometric and hyperbolic functions, and does not need any programming effort or sophistic machine to solve it. For less than ten wells heterostructures, we have derived and simplified the energy quantification conditions. The subband is build point by point; each point presents an energy level. Our simple energy quantification condition is used to calculate the subband structure of the GaAs/Ga0.5Al0.5As heterostructures, and build its subband point by point for 4 and 20 wells. Our finding shows a good agreement with previously published results
Superlattice band structure: New and simple energy quantification condition
Energy Technology Data Exchange (ETDEWEB)
Maiz, F., E-mail: fethimaiz@gmail.com [University of Cartage, Nabeul Engineering Preparatory Institute, Merazka, 8000 Nabeul (Tunisia); King Khalid University, Faculty of Science, Physics Department, P.O. Box 9004, Abha 61413 (Saudi Arabia)
2014-10-01
Assuming an approximated effective mass and using Bastard's boundary conditions, a simple method is used to calculate the subband structure for periodic semiconducting heterostructures. Our method consists to derive and solve the energy quantification condition (EQC), this is a simple real equation, composed of trigonometric and hyperbolic functions, and does not need any programming effort or sophistic machine to solve it. For less than ten wells heterostructures, we have derived and simplified the energy quantification conditions. The subband is build point by point; each point presents an energy level. Our simple energy quantification condition is used to calculate the subband structure of the GaAs/Ga{sub 0.5}Al{sub 0.5}As heterostructures, and build its subband point by point for 4 and 20 wells. Our finding shows a good agreement with previously published results.
Analysis of the electronic structure of crystals through band structure unfolding
Gordienko, A. B.; Kosobutsky, A. V.
2016-03-01
In this work, we consider an alternative implementation of the band structure unfolding method within the framework of the density functional theory, which combines the advantages of the basis of localized functions and plane waves. This approach has been used to analyze the electronic structure of the ordered CuCl x Br1- x copper halide alloys and F 0 center in MgO that enables us to reveal qualitatively the features remaining hidden when using the standard supercell method, because of the complex band structure of systems with defects.
Role of interface band structure on hot electron transport
Garramone, John J.
Knowledge of electron transport through materials and interfaces is fundamentally and technologically important. For example, metal interconnects within integrated circuits suffer increasingly from electromigration and signal delay due to an increase in resistance from grain boundary and sidewall scattering since their dimensions are becoming shorter than the electron mean free path. Additionally, all semiconductor based devices require the transport of electrons through materials and interfaces where scattering and parallel momentum conservation are important. In this thesis, the inelastic and elastic scattering of hot electrons are studied in nanometer thick copper, silver and gold films deposited on silicon substrates. Hot electrons are electron with energy greater than kBT above the Fermi level (EF). This work was performed utilizing ballistic electron emission microscopy (BEEM) which is a three terminal scanning tunneling microscopy (STM) technique that measures the percentage of hot electrons transmitted across a Schottky barrier interface. Hot electron attenuation lengths of the metals were extracted by measuring the BEEM current as a function of metal overlayer thickness for both hot electron and hot hole injection at 80 K and under ultra high vacuum. The inelastic and elastic scattering lengths were extracted by fitting the energetic dependence of the measured attenuation lengths to a Fermi liquid based model. A sharp increase in the attenuation length is observed at low injection energies, just above the Schottky barrier height, only for metals on Si(001) substrates. In contrast, the attenuation length measured on Si(111) substrates shows a sharp decrease. These results indicate that interface band structure and parallel momentum conservation have significant impact upon the transport of hot electrons across non epitaxial metal-semiconductor interfaces. In addition, they help to separate effects upon hot electron transport that are inherent to the metal
Ab Initio Calculations for the BaTiO3 (001) Surface Structure
Institute of Scientific and Technical Information of China (English)
XUE Xu-Yan; WANG Chun-Lei; ZHONG Wei-Lie
2004-01-01
@@ The ab initio method within the local density approximation is applied to calculate cubic BaTiO3 (001) surface relaxation and rumpling for two different terminations (BaO and TiO2). Our calculations demonstrate that cubic perovskite BaTiO3 crystals possess surface polarization, accompanied by the presence of the relevant electric field.We analyse their electronic structures (band structure, density of states and the electronic density redistribution with emphasis on the covalency effects). The results are also compared with that of the previous ab initio calculations. Considerable increases of Ti-O chemical bond covalency nearby the surface have been observed.The band gap reduces especially for the TiO2 termination.
Relativistic Band Structure and Fermi Surface of PdTe2 by the LMTO Method
DEFF Research Database (Denmark)
Jan, J. P.; Skriver, Hans Lomholt
1977-01-01
The energy bands of the trigonal layer compound PdTe2 have been calculated, using the relativistic linear muffin-tin orbitals method. The bandstructure is separated into three distinct regions with low-lying Te 5s bands, conduction bands formed by Pd 4d and Te 5p states, and high-lying bands formed...... by Pd 5p, Te 6s and Te 5d states. Density of states and joint density of states have been calculated from the bands determined over the appropriate irreducible zone. The Fermi surface consists of two closed sheets in band 11 and band 13, and sheets in band 12 connected to one another by tubes...
Yelgel, Celal
2016-04-01
We present an extensive density functional theory (DFT) based investigation of the electronic structures of ABC-stacked N-layer graphene. It is found that for such systems the dispersion relations of the highest valence and the lowest conduction bands near the K point in the Brillouin zone are characterised by a mixture of cubic, parabolic, and linear behaviours. When the number of graphene layers is increased to more than three, the separation between the valence and conduction bands decreases up until they touch each other. For five and six layer samples these bands show flat behaviour close to the K point. We note that all states in the vicinity of the Fermi energy are surface states originated from the top and/or bottom surface of all the systems considered. For the trilayer system, N = 3, pronounced trigonal warping of the bands slightly above the Fermi level is directly obtained from DFT calculations.
A Banding Structure in a Ni-Cu-Si Cast Alloy
Institute of Scientific and Technical Information of China (English)
Qi ZHENG; Yufeng ZHENG; Hongyu ZHANG; Xiaofeng SUN; Hengrong GUAN; Zhuangqi HU
2008-01-01
The solidified microstructure of a Ni-Cu-Si cast alloy has been investigated, and a kind of banding structure was observed. The results showed that, the banding structure was composed of coarser particles which were Ni3Si type of precipitates and similar to the fine particles precipitate uniformly distributed within matrix of Ni solid solution, in both crystal structure and composition. The formation of bandings was resulted from cast thermal stress and dislocation walls. It was found that the cracks propagated along these bandings in tensile test. The banding structure can be depressed by reducing the cast thermal stress, which can improve the Qtensile ductility.
Banding and electronic structures of metal azides——Sensitivity and conductivity
Institute of Scientific and Technical Information of China (English)
肖鹤鸣; 李永富
1995-01-01
By using both DV-Xα and EH-CO methods, the calculation studies of the structure-property relationships of a series of metal azides, of their clusters’ electronic structures in ground and excited states, of their systems with cation vacancy and the doped Pb(N3)2, as well as their crystal band structures have been conducted. The results show that the sensitivity of ionic-type metal azides varies with the degree of difficulty of electronic transition of the losing charge on N3. A metal azide with cation vacancies has a greater sensitivity than the perfect one. When doped with monovalent metal ions, lead azide’s sensitivity increased; when with trivalent ones, its sensitivity decreased; when with divalent ones, little of it changed. Compared with heavy metal azides. an alkali metal azide has a larger band gap, a smaller band width and a greater transition energy of frontier electron with a smaller amount of losing charge on N3, and thus has lower sensitivity and conductivity than heavy metal azides.
Enlargement of Photonic Band Gaps and Physical Picture of Photonic Band Structures
Institute of Scientific and Technical Information of China (English)
ZHANG Yan; SHI Jun-Jie
2006-01-01
@@ Light propagation in a one-dimensional photonic crystal (PC), consisting of alternative slabs with refractive indices (layer thicknesses) n1 (a) and n2 (b), is investigated. An important optimal parameter matching condition,n1a ≈ n2b, is obtained for the largest photonic band gap (PBG). Moreover, we find that the exact analytical solutions for the electric/magnetic field eigenmodes at the band edges are standing waves with odd or even symmetry about the centre of each layer. The electric/magnetic field eigenfunctions at the top and bottom of the nth band have n and n - 1 nodes in one period of PC, respectively. The PBG arises from the symmetric differences of the field eigenfunctions at the band edges.
Structure function calculations for Ostwald Ripening processes
Hassan, Razi A.
1990-01-01
A program for computing the structure function for configurations involved in Ostwald Ripening was written. The basic algorithms are derived from a mathematical analysis of a two-dimensional model system developed by Bortz, et. al. (1974). While it is expected that the values form the computer simulations will reflect Ostwald Ripening, at this point the program is still being tested. Some preliminary runs seem to justify the expectations.
The band structure of carbonmonoxide on 2-D Au islands on graphene
Katsiev, Khabiboulakh
2014-06-01
The dispersion of the occupied molecular orbitals of carbon monoxide adsorbed on Au 2D islands, vapor-deposited on graphene/Ru(0 0 0 1), is seen to be wave vector dependent, as revealed by angle-resolved photoemission. The band dispersion is similar to CO monolayers adsorbed on many single crystal metal surfaces. Thus not only are the adsorbed gold islands on graphene flat and crystalline, as evident in the dispersion of the Au d-states, but the CO molecular adlayer is both molecular and ordered as well. The experimental angle-resolved photoemission combined with model calculations of the occupied CO band structure, suggest that, in spite of being a very weakly bound adsorbate, the CO adlayer on Au 2D islands on graphene is strongly hybridized to the Au layer. . © 2014 Elsevier B.V. All rights reserved.
Strain-tunable band parameters of ZnO monolayer in graphene-like honeycomb structure
Behera, Harihar; Mukhopadhyay, Gautam
2012-10-01
We present ab initio calculations which show that the direct-band-gap, effective masses and Fermi velocities of charge carriers in ZnO monolayer (ML-ZnO) in graphene-like honeycomb structure are all tunable by application of in-plane homogeneous biaxial strain. Within our simulated strain limit of ±10%, the band gap remains direct and shows a strong non-linear variation with strain. Moreover, the average Fermi velocity of electrons in unstrained ML-ZnO is of the same order of magnitude as that in graphene. The results promise potential applications of ML-ZnO in mechatronics/straintronics and other nano-devices such as the nano-electromechanical systems (NEMS) and nano-optomechanical systems (NOMS).
Improved cache performance in Monte Carlo transport calculations using energy banding
Siegel, A.; Smith, K.; Felker, K.; Romano, P.; Forget, B.; Beckman, P.
2014-04-01
We present an energy banding algorithm for Monte Carlo (MC) neutral particle transport simulations which depend on large cross section lookup tables. In MC codes, read-only cross section data tables are accessed frequently, exhibit poor locality, and are typically too much large to fit in fast memory. Thus, performance is often limited by long latencies to RAM, or by off-node communication latencies when the data footprint is very large and must be decomposed on a distributed memory machine. The proposed energy banding algorithm allows maximal temporal reuse of data in band sizes that can flexibly accommodate different architectural features. The energy banding algorithm is general and has a number of benefits compared to the traditional approach. In the present analysis we explore its potential to achieve improvements in time-to-solution on modern cache-based architectures.
Photonic Band Gaps in 3D Network Structures with Short-range Order
Liew, Seng Fatt; Noh, Heeso; Schreck, Carl F; Dufresne, Eric R; O'Hern, Corey S; Cao, Hui
2011-01-01
We present a systematic study of photonic band gaps (PBGs) in three-dimensional (3D) photonic amorphous structures (PAS) with short-range order. From calculations of the density of optical states (DOS) for PAS with different topologies, we find that tetrahedrally connected dielectric networks produce the largest isotropic PBGs. Local uniformity and tetrahedral order are essential to the formation of PBGs in PAS, in addition to short-range geometric order. This work demonstrates that it is possible to create broad, isotropic PBGs for vector light fields in 3D PAS without long-range order.
Li, Wei-Dong; Zhang, Yunbo; Liang, J.-Q.
2003-06-01
The energy-band structure and energy splitting due to quantum tunneling in two weakly linked Bose-Einstein condensates were calculated by using the instanton method. The intrinsic coherent properties of Bose-Josephson junction (BJJ) were investigated in terms of energy splitting. For EC/EJ≪1, the energy splitting is small and the system is globally phase coherent. In the opposite limit, EC/EJ≫1, the energy splitting is large and the system becomes phase dissipated. Our results suggest that one should investigate the coherence phenomena of BJJ in proper condition such as EC/EJ˜1.
Computing the band structure and energy gap of penta-graphene by using DFT and G0W0 approximations
Einollahzadeh, H.; Dariani, R. S.; Fazeli, S. M.
2016-03-01
In this paper, we consider the optimum coordinate of the penta-graphene. Penta-graphene is a new stable carbon allotrope which is stronger than graphene. Here, we compare the band gap of penta-graphene with various density functional theory (DFT) methods. We plot the band structure of penta-graphene which calculated with the generalized gradient approximation functional HTCH407, about Fermi energy. Then, one-shot GW (G0W0) correction for precise computations of band structure is applied. Quasi-direct band gap of penta-graphene is obtained around 4.1-4.3 eV by G0W0 correction. Penta-graphene is an insulator and can be expected to have broad applications in future, especially in nanoelectronics and nanomechanics.
Calculated effect of conduction-band offset on CuInSe{sub 2} solar-cell performance
Energy Technology Data Exchange (ETDEWEB)
Liu, X.; Sites, J.R. [Physics Department, Colorado State University, Fort Collins, Colorado 80523 (United States)
1996-01-01
The band diagram and resulting current-voltage curves for CuInSe{sub 2} solar cells are calculated as functions of conduction-band offset using ADEPT software with and without an indium-rich intermediate layer. In the absence of the intermediate layer, current-voltage curves for CdS/CuInSe{sub 2} solar cells show only a weak dependence on conduction-band offset over a wide range from approximately {minus}0.5 eV to 0.4 eV at room temperature. An indium rich {ital n}-type intermediate layer with 1.3 eV band gap and thickness smaller than the depletion width can increase the open-circuit voltage as much as 30{percent} at large positive band offsets. The highest efficiency, however, is increased by a more modest 6{percent}. Again the cell parameters are relatively flat, but over a somewhat narrower conduction-band offset range. {copyright} {ital 1996 American Institute of Physics.}
Structural mechanisms of formation of adiabatic shear bands
Directory of Open Access Journals (Sweden)
Mikhail Sokovikov
2016-10-01
Full Text Available The paper focuses on the experimental and theoretical study of plastic deformation instability and localization in materials subjected to dynamic loading and high-velocity perforation. We investigate the behavior of samples dynamically loaded during Hopkinson-Kolsky pressure bar tests in a regime close to simple shear conditions. Experiments were carried out using samples of a special shape and appropriate test rigging, which allowed us to realize a plane strain state. Also, the shear-compression specimens proposed in were investigated. The lateral surface of the samples was investigated in a real-time mode with the aid of a high-speed infra-red camera CEDIP Silver 450M. The temperature field distribution obtained at different time made it possible to trace the evolution of plastic strain localization. Use of a transmission electron microscope for studying the surface of samples showed that in the regions of strain localization there are parts taking the shape of bands and honeycomb structure in the deformed layer. The process of target perforation involving plug formation and ejection was investigated using a high-speed infra-red camera. A specially designed ballistic set-up for studying perforation was used to test samples in different impulse loading regimes followed by plastic flow instability and plug ejection. Changes in the velocity of the rear surface at different time of plug ejection were analyzed by Doppler interferometry techniques. The microstructure of tested samples was analyzed using an optical interferometer-profilometer and a scanning electron microscope. The subsequent processing of 3D deformation relief data enabled estimation of the distribution of plastic strain gradients at different time of plug formation and ejection. It has been found that in strain localization areas the subgrains are elongated taking the shape of bands and undergo fragmentation leading to the formation of super-microcrystalline structure, in which the
True photonic band-gap mode-control in VCSEL structures
DEFF Research Database (Denmark)
Romstad, F.; Madsen, M.; Birkedal, Dan;
2003-01-01
Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect.......Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....
Band gap engineering and \\vec{k}\\cdot \\vec{\\pi } electronic structure of lead and tin tellurides
Behera, S. S.; Tripathi, G. S.
2016-06-01
We study the effect of the variation of energy gap on the k\\cdot π electronic structure of PbTe and SnTe, using a six-level basis at the L point. The basis functions in both the systems have the same transformation properties. However, the basis functions of the band edge states in SnTe are reversed with respect to the same in PbTe. Band dispersions are obtained analytically for a two band model. As the band gap decreases, the bands become linear. Far bands are included in the electronic dispersion, using perturbation theory. Fermi energy and the Density of States at the Fermi energy, { D }({\\varepsilon }F), are calculated for different carrier concentrations and energy gaps through a self-consistent approach. Interesting results are seen when the energy gap is reduced from the respective equilibrium values. For both the systems, the Fermi energy increases as the gap is decreased. The behavior of { D }({\\varepsilon }F) is, however, different. It decreases with the gap. It is also on expected lines. Calculated values of the electronic effective mass, as a function of temperature, energy gap and carrier concentration, are compared with previously published data. As distinguished from a first principles calculation, the work has focused on the carrier dependent electronic parameters for use both by theorists and experimenters as well.
New method for computation of band structures in 1D photonic crystals based on the Fresnel equations
Roshan Entezar, S.
2013-02-01
In this paper, we present a new method for calculation of band structure in one-dimensional bilayer photonic crystals, based on the Fresnel equations. We derive a new relation to obtain the band structure without using the Floquet theorem. It is shown that this relation can be simplified under the assumption that the single-path phase-shift acquired through the individual layers of the photonic crystal be equal to ? . The results obtained by our method are compared with the ones obtained from the transfer matrix method to show that they are exactly identical.
Structure of the doubly odd nucleus sup 1 sup 8 sup 0 Ta Description of 23 bands
Saitoh, T R; Sletten, G; Bark, R A; Toermaenen, S; Bergström, M H; Furuno, K; Furutaka, K; Hagemann, G B; Hayakawa, T; Komatsubara, T; Maj, A; Mitarai, S; Oshima, M; Sampson, J; Shizuma, T; Varmette, P G
1999-01-01
The structure of the doubly-odd nucleus sup 1 sup 8 sup 0 Ta has been studied by gamma-gamma coincidence measurements with a DC beam at 52 and 57 MeV and time-correlated gamma-gamma coincidence measurements with a pulsed beam at 55 MeV via the sup 1 sup 7 sup 6 Yb( sup 1 sup 1 B, alpha 3n) sup 1 sup 8 sup 0 Ta reaction. In all measurements, gamma-rays were detected in coincidence with charged particles. In the time-correlated gamma-gamma coincidence measurements with a pulsed sup 1 sup 1 B beam, three rotational bands and one octupole vibrational band have been identified above the I suppi=15 sup - T sub 1 sub / sub 2 =30 mu s isomer. The configuration of three bands built on 8 sup + states has been discussed by means of three-band mixing calculations. BCS calculations with blocking have been used in support of configuration assignment of four- and six-quasiparticle structures. Totally, 19 rotational bands, one beta-, one gamma- and two octupole-vibrational bands, plus one intrinsic state have been identified...
Lany, Stephan
2014-03-01
The group II chalcogenides are an important class of functional semiconductor materials exhibiting a remarkable diversity in terms of structure and properties. In order to aid the materials design, a consistent set of electronic structure calculations is presented, including data on the polymorphic energy ordering, the band-structures, the band-lineups relative to the vacuum level, surface energies, as well as on the alloy energetics. To this end, current state-of-the-art electronic structure tools are employed, which, besides standard density functional theory (DFT), include totalenergy calculation in the random phase approximation and GW quasiparticle energy calculations. The ionization potentials and electron affinities are obtained by combining the results of bulk GW and surface DFT calculations. Considering both octahedral and tetrahedral coordination symmetries, exemplified by the rock-salt and zinc-blende lattices, respectively, this data reveals both the chemical and structural trends within this materials family.
Miniaturization of electromagnetic band gap structures for mobile applications
Goussetis, G.; Feresidis, A. P.; Palikaras, G. K.; Kitra, M.; Vardaxoglou, J. C.
2005-12-01
It is well known that interference of the human body affects the performance of the antennas in mobile phone handsets. In this contribution, we investigate the use of miniaturized metallodielectric electromagnetic band gap (MEBG) structures embedded in the case of a mobile handset as a means of decoupling the antenna from the user's hand. The closely coupled MEBG concept is employed to achieve miniaturization of the order of 15:1. Full wave dispersion relations for planar closely coupled MEBG arrays are presented and are validated experimentally. The performance of a prototype handset with an embedded conformal MEBG is assessed experimentally and is compared to a similar prototype without the MEBG. Reduction in the detuning of the antenna because of the human hand by virtue of the MEBG is demonstrated. Moreover, the efficiency of the handset when loaded with a human hand model is shown to improve when the MEBG is in place. The improvements are attributed to the decoupling of the antenna from the user's hand, which is achieved by means of suppressing the fields in the locality of the hand.
Calculations of optical rotation: Influence of molecular structure
Directory of Open Access Journals (Sweden)
Yu Jia
2012-01-01
Full Text Available Ab initio Hartree-Fock (HF method and Density Functional Theory (DFT were used to calculate the optical rotation of 26 chiral compounds. The effects of theory and basis sets used for calculation, solvents influence on the geometry and values of calculated optical rotation were all discussed. The polarizable continuum model, included in the calculation, did not improve the accuracy effectively, but it was superior to γs. Optical rotation of five or sixmembered of cyclic compound has been calculated and 17 pyrrolidine or piperidine derivatives which were calculated by HF and DFT methods gave acceptable predictions. The nitrogen atom affects the calculation results dramatically, and it is necessary in the molecular structure in order to get an accurate computation result. Namely, when the nitrogen atom was substituted by oxygen atom in the ring, the calculation result deteriorated.
Energy Technology Data Exchange (ETDEWEB)
Werwiński, M. [Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań (Poland); Szajek, A. [Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań (Poland); Centre for Advanced Materials and Smart Structures, Polish Academy of Sciences, Okólna 2, 50-950 Wrocław (Poland); Ślebarski, A. [Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice (Poland); Centre for Advanced Materials and Smart Structures, Polish Academy of Sciences, Okólna 2, 50-950 Wrocław (Poland); Kaczorowski, D., E-mail: D.Kaczorowski@int.pan.wroc.pl [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P. O. Box 1410, 50-950 Wrocław (Poland); Centre for Advanced Materials and Smart Structures, Polish Academy of Sciences, Okólna 2, 50-950 Wrocław (Poland)
2015-10-25
The electronic structure of a heavy-fermion superconductor Ce{sub 2}PdIn{sub 8} was investigated by means of X-ray photoelectron spectroscopy (XPS) and ab initio density functional band structure calculations. The Ce 3d core-level XPS spectra point to stable trivalent configuration of Ce atoms that is also reproduced in the band structure calculations within the generalized gradient approximation GGA+U approach. Analysis of the 3d{sup 9}f{sup 2} weight in the 3d XPS spectra within the Gunnarsson-Schönhammer model suggests that the onsite hybridization energy between Ce 4f and the conduction band states, Δ{sub fs}, is ∼120 meV, which is about 30 meV larger than Δ{sub fs} in isostructural Ce{sub 2}TIn{sub 8} compounds with T = Co, Rh, and Ir. Taking into account a Coulomb repulsion U on both the Ce 4f and Pd 4d states in electronic band structure calculations, a satisfactory agreement was found between the calculated density of states (DOS) and the measured valence band XPS spectra. - Highlights: • XPS data validated strong electronic correlations in superconducting Ce{sub 2}PdIn{sub 8}. • DFT calculations reproduced XPS spectra measured for Ce{sub 2}PdIn{sub 8}. • Crucial role of Pd d electrons in the HF behavior of Ce{sub 2}PdIn{sub 8} was established.
Comparison of CONDOR, FCI and MAFIA Calculations for a 150MW S-Band Klystron with Measurements
Energy Technology Data Exchange (ETDEWEB)
Sprehn, Daryl W
2003-06-11
To facilitate the design of high power klystrons an investigation into the reliability and accuracy of three modern particle-in-cell codes was performed. A 150 MW S-band klystron for which measurements were available was used for this comparison. The field calculations of the particle-in-cell codes are based on a finite difference time domain scheme, and use a port approximation to speed up the convergence to steady state. However, they differ in many details (e.g. calculation of E, B or A, {psi}; space charge correction; 2D or 3D modeling of output cavity).
Quasiparticle band structure and optical properties of NH{sub 3}BH{sub 3}
Energy Technology Data Exchange (ETDEWEB)
Bheema Lingam, C. [School of Physics, University of Hyderabad, Hyderabad 500 046 (India); Ramesh Babu, K.; Vaitheeswaran, G. [Advanced Centre of Research in High Energy Materials (ACRHEM), University of Hyderabad, Hyderabad 500 046 (India); Tewari, Surya P. [School of Physics, University of Hyderabad, Hyderabad 500 046 (India); Advanced Centre of Research in High Energy Materials (ACRHEM), University of Hyderabad, Hyderabad 500 046 (India); Lebegue, S. [Laboratoire de Cristallographie, Resonance Magnetique et Modelisations (CRM2, UMR CNRS 7036), Institut Jean Barriol, Nancy Universite BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre-les-Nancy (France)
2011-01-15
The quasiparticle band structure of the low temperature orthorhombic phase of NH{sub 3}BH{sub 3} is studied by using the GW approximation. It is found that NH{sub 3}BH{sub 3} is an insulator with a value of the band gap of 5.90 eV with GGA and of 9.60 eV with the GW approximation. Then, the optical properties of NH{sub 3}BH{sub 3} are obtained by the calculation of the dielectric function, corrected by a scissor shift operation corresponding to the GW correction on the band gap. Also, the optical anisotropy in NH{sub 3}BH{sub 3} is analyzed through the refractive index and static dielectric constants along the different crystallographic directions. Finally, it is found that the energy loss function has a prominent peak at 22.26 eV; at these frequencies (above 22.26 eV) NH{sub 3}BH{sub 3} becomes transparent. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
The valence band structure of AgxRh1–x alloy nanoparticles
International Nuclear Information System (INIS)
The valence band (VB) structures of face-centered-cubic Ag-Rh alloy nanoparticles (NPs), which are known to have excellent hydrogen-storage properties, were investigated using bulk-sensitive hard x-ray photoelectron spectroscopy. The observed VB spectra profiles of the Ag-Rh alloy NPs do not resemble simple linear combinations of the VB spectra of Ag and Rh NPs. The observed VB hybridization was qualitatively reproduced via a first-principles calculation. The electronic structure of the Ag0.5Rh0.5 alloy NPs near the Fermi edge was strikingly similar to that of Pd NPs, whose superior hydrogen-storage properties are well known.
Two-dimensional silica: Structural, mechanical properties, and strain-induced band gap tuning
International Nuclear Information System (INIS)
Two-dimensional silica is of rising interests not only for its practical applications as insulating layers in nanoelectronics, but also as a model material to understand crystals and glasses. In this study, we examine structural and electronic properties of hexagonal and haeckelite phases of silica bilayers by performing first-principles calculations. We find that the corner-sharing SiO4 tetrahedrons in these two phases are locally similar. The robustness and resilience of these tetrahedrons under mechanical perturbation allow effective strain engineering of the electronic structures with band gaps covering a very wide range, from of that for insulators, to wide-, and even narrow-gap semiconductors. These findings suggest that the flexible 2D silica holds great promises in developing nanoelectronic devices with strain-tunable performance, and lay the ground for the understanding of crystalline and vitreous phases in 2D, where bilayer silica provides an ideal test-bed
Two-dimensional silica: Structural, mechanical properties, and strain-induced band gap tuning
Gao, Enlai; Xie, Bo; Xu, Zhiping
2016-01-01
Two-dimensional silica is of rising interests not only for its practical applications as insulating layers in nanoelectronics, but also as a model material to understand crystals and glasses. In this study, we examine structural and electronic properties of hexagonal and haeckelite phases of silica bilayers by performing first-principles calculations. We find that the corner-sharing SiO4 tetrahedrons in these two phases are locally similar. The robustness and resilience of these tetrahedrons under mechanical perturbation allow effective strain engineering of the electronic structures with band gaps covering a very wide range, from of that for insulators, to wide-, and even narrow-gap semiconductors. These findings suggest that the flexible 2D silica holds great promises in developing nanoelectronic devices with strain-tunable performance, and lay the ground for the understanding of crystalline and vitreous phases in 2D, where bilayer silica provides an ideal test-bed.
Zou, P
2001-01-01
An important area of application of high-power radio frequency (RF) and microwave sources is particle acceleration. A major challenge for the current worldwide research and development effort in linear accelerator is the search for a compact and affordable very-high-energy accelerator technology for the next generation supercolliders. It has been recognized for sometime that dielectric loaded accelerator structures are attractive candidates for the next generation very-high-energy linear accelerators, because they possess several distinct advantages over conventional metallic iris- loaded accelerator structures. However, some fundamental issues, such as RF breakdown in the dielectric, Joule heating, and vacuum properties of dielectric materials, are still the subjects of intense investigation, requiring the validation by experiments conducted at high power levels. An X-band traveling-wave accelerator based on dielectric-lined waveguide has been designed and constructed. Numerical calculation, bench measuremen...
Two-dimensional silica: Structural, mechanical properties, and strain-induced band gap tuning
Energy Technology Data Exchange (ETDEWEB)
Gao, Enlai; Xie, Bo [Applied Mechanics Laboratory, Department of Engineering Mechanics, and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084 (China); Xu, Zhiping, E-mail: xuzp@tsinghua.edu.cn [Applied Mechanics Laboratory, Department of Engineering Mechanics, and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084 (China); State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)
2016-01-07
Two-dimensional silica is of rising interests not only for its practical applications as insulating layers in nanoelectronics, but also as a model material to understand crystals and glasses. In this study, we examine structural and electronic properties of hexagonal and haeckelite phases of silica bilayers by performing first-principles calculations. We find that the corner-sharing SiO{sub 4} tetrahedrons in these two phases are locally similar. The robustness and resilience of these tetrahedrons under mechanical perturbation allow effective strain engineering of the electronic structures with band gaps covering a very wide range, from of that for insulators, to wide-, and even narrow-gap semiconductors. These findings suggest that the flexible 2D silica holds great promises in developing nanoelectronic devices with strain-tunable performance, and lay the ground for the understanding of crystalline and vitreous phases in 2D, where bilayer silica provides an ideal test-bed.
Crystal Structure, Energy Band and Optical Properties of Phosphate In(PO3)3
Institute of Scientific and Technical Information of China (English)
KAN Zi-Gui; CHENG Wen-Dan; WU Dong-Sheng; ZHANG Hao; GONG Ya-Jing; ZHU Jing; TONG Hua-Nan
2005-01-01
The crystal of the title compound (InP3O9, Mr = 351.73) has been prepared and structurally determined by X-ray single-crystal diffraction. It crystallizes in the monoclinic system, space group Cc with a = 13.545(6), b = 19.603(7), c = 9.672(4)(A), β = 127.196(4)°, V = 2045.6(14)(A)3 and Z = 12. The compound, with a three-fold superstructure, has two kinds of infinite chains of PO4 tetrahedra along the c axis. The absorption and luminescence spectra of In(PO3)3 powder have been measured. The calculated results of crystal energy band structure by DFT indicate that the solid state is kind of insulator. What is more, the bonding and optical properties were also investigated with the CASTEP code.
Evolution of band structures in MoS2-based homo- and heterobilayers
International Nuclear Information System (INIS)
Density functional theory calculations have been performed to elucidate the detailed evolution of band structures in MoS2-based homo- and heterobilayers. By constructing the energy-band alignments we observed that biaxial tensile and compressive strain in the constituent transition-metal dichalcogenide (TMD) monolayer shifts the states at the K C, Q C, and K V points down and up, respectively, while the states at the ΓV point are almost unaltered. In contrast, interlayer coupling tends to modify the states at the ΓV and Q C points by splitting the band-edge states of two strained or unstrained constituent TMD monolayers, while it does not affect the states at the K C and K V points. Considering the combined actions of strain and interlayer coupling, the relevant electronic parameters, especially the detailed evolution processes, of the band structures of the investigated bilayer systems can be clearly described. When further applying the extra biaxial strain to the three bilayer systems, it is found that energy differences ΔE(K C − Q C) and ΔE(K V − ΓV) decrease linearly as the increasing of the biaxial strain. According to the varying trends of ΔE(K C − Q C) and ΔE(K V − ΓV), MoS2 bilayer will maintain the indirect-bandgap character under any compressive or tensile strain. Differently, WS2/MoS2 heterobilayer transforms interestingly to the direct-bandgap material under the strain from −1.6% to −1.2% with the valence band maximum and conduction band minimum located at the K C and K V point respectively. The direct-to-indirect bandgap transition can be obtained for the WSe2/MoS2 heterobilayer when applying much larger extra tensile or compressive strain. The results offer an effective route to verify and tailor the electronic properties of TMD homo- and heterostructures and can be helpful in evaluating the performance of TMD-based electronic devices. (paper)
Evolution of band structures in MoS2-based homo- and heterobilayers
Zhu, H. L.; Zhou, C. J.; Huang, X. J.; Wang, X. L.; Xu, H. Z.; Lin, Yong; Yang, W. H.; Wu, Y. P.; Lin, W.; Guo, F.
2016-02-01
Density functional theory calculations have been performed to elucidate the detailed evolution of band structures in MoS2-based homo- and heterobilayers. By constructing the energy-band alignments we observed that biaxial tensile and compressive strain in the constituent transition-metal dichalcogenide (TMD) monolayer shifts the states at the K C, Q C, and K V points down and up, respectively, while the states at the ΓV point are almost unaltered. In contrast, interlayer coupling tends to modify the states at the ΓV and Q C points by splitting the band-edge states of two strained or unstrained constituent TMD monolayers, while it does not affect the states at the K C and K V points. Considering the combined actions of strain and interlayer coupling, the relevant electronic parameters, especially the detailed evolution processes, of the band structures of the investigated bilayer systems can be clearly described. When further applying the extra biaxial strain to the three bilayer systems, it is found that energy differences ΔE(K C - Q C) and ΔE(K V - ΓV) decrease linearly as the increasing of the biaxial strain. According to the varying trends of ΔE(K C - Q C) and ΔE(K V - ΓV), MoS2 bilayer will maintain the indirect-bandgap character under any compressive or tensile strain. Differently, WS2/MoS2 heterobilayer transforms interestingly to the direct-bandgap material under the strain from -1.6% to -1.2% with the valence band maximum and conduction band minimum located at the K C and K V point respectively. The direct-to-indirect bandgap transition can be obtained for the WSe2/MoS2 heterobilayer when applying much larger extra tensile or compressive strain. The results offer an effective route to verify and tailor the electronic properties of TMD homo- and heterostructures and can be helpful in evaluating the performance of TMD-based electronic devices.
Band-Filling Correction Method for Accurate Adsorption Energy Calculations: A Cu/ZnO Case Study.
Hellström, Matti; Spångberg, Daniel; Hermansson, Kersti; Broqvist, Peter
2013-11-12
We present a simple method, the "band-filling correction", to calculate accurate adsorption energies (Eads) in the low coverage limit from finite-size supercell slab calculations using DFT. We show that it is necessary to use such a correction if charge transfer takes place between the adsorbate and the substrate, resulting in the substrate bands either filling up or becoming depleted. With this correction scheme, we calculate Eads of an isolated Cu atom adsorbed on the ZnO(101̅0) surface. Without the correction, the calculated Eads is highly coverage-dependent, even for surface supercells that would typically be considered very large (in the range from 1 nm × 1 nm to 2.5 nm × 2.5 nm). The correction scheme works very well for semilocal functionals, where the corrected Eads is converged within 0.01 eV for all coverages. The correction scheme also works well for hybrid functionals if a large supercell is used and the exact exchange interaction is screened. PMID:26583386
Fine structure of the band-edge excitons and trions in CdSe/CdS core/shell nanocrystals
Shabaev, A.; Rodina, A. V.; Efros, Al. L.
2012-11-01
We present a theoretical description of excitons and positively and negatively charged trions in “giant” CdSe/CdS core-shell nanocrystals (NCs). The developed theory provides the parameters describing the fine structure of excitons in CdSe/CdS core/thick shell NCs as a function of the CdSe/CdS conduction band offset and the CdSe core radius. We have also developed a general theory describing the fine structure of positively charged trions created in semiconductor NCs with a degenerate valence band. The calculations take into account the complex structure of the CdSe valence band and interparticle Coulomb and exchange interaction. Presented in this paper are the CdSe core size and CdSe/CdS conduction band offset dependencies (i) of the positively charged trion fine structure, (ii) of the binding energy of the negatively charged trion, and (iii) of the radiative decay time for excitons and trions. The results of theoretical calculations are in qualitative agreement with available experimental data.
New linear accelerator (Linac) design based on C-band accelerating structures for SXFEL facility
Institute of Scientific and Technical Information of China (English)
ZHANG Meng; GU Qiang
2011-01-01
A C-band accelerator structure is one promising technique for a compact XFEL facility.It is also attractive in beam dynamics in maintaining a high quality electron beam,which is an important factor in the performance of a free electron laser.In this paper,a comparison between traditional S-band and C-band accelerating structures is made based on the linac configuration of a Shanghai Soft X-ray Free Electron Laser (SXFEL) facility.Throughout the comprehensive simulation,we conclude that the C-band structure is much more competitive.
Theoretical study of relative width of photonic band gap for the 3-D dielectric structure
Indian Academy of Sciences (India)
G K Johri; Akhilesh Tiwari; Saumya Saxena; Rajesh Sharma; Kuldeep Srivastava; Manoj Johri
2002-03-01
Calculations for the relative width (/0) as a function of refractive index and relative radius of the photonic band gap for the fcc closed packed 3-D dielectric microstructure are reported and comparison of experimental observations and theoretical predictions are given. This work is useful for the understanding of photonic crystals and occurrence of the photonic band gap.
Relationships between magnetic foot points and G-band bright structures
Ishikawa, R.; Tsuneta, S.; Kitakoshi, Y.; Katsukawa, Y.; Bonet, J. A.; Domínguez, S. Vargas; van der Voort, L. H. M. Rouppe; Sakamoto, Y; Ebisuzaki, T.
2008-01-01
Magnetic elements are thought to be described by flux tube models, and are well reproduced by MHD simulations. However, these simulations are only partially constrained by observations. We observationally investigate the relationship between G-band bright points and magnetic structures to clarify conditions, which make magnetic structures bright in G-band. The G-band filtergrams together with magnetograms and dopplergrams were taken for a plage region covered by abnormal granules as well as u...
The band structures of BSb and BxGa1-xSb alloys
Institute of Scientific and Technical Information of China (English)
XIONG DePing; ZHOU ShouLi; WANG Qi; LUO Li; HUANG YongQing; REN XiaoMin
2009-01-01
The band structures of BSb and BxGa1-xSb alloys are studied using first-principles calculations in the generalized gradient approximation. By SQS-8 supercells to model a random alloy, the direct transition energy-gap (Γ15v-Γ1c) bowing of 3.0 eV is obtained for BxGa1-xSb alloys in x=0-50%, in x=0-11% the energy-gap is the band-gap and increases by 7 meV/%B with boron composition increasing; by SQS-16 supercells the bowing parameter is about 1.9 eV in x= 0-12.5%. The formation enthalpies of mixing, ΔH,are calculated for BxGa1-xAs and BxGa1-xSb alloys. A comparison of enthalpies indicates that BxGa1-xSb films with boron composition of 7% may be possible.
Band Structures of $^{182}Os$ Studied by GCM based on 3D-CHFB
Horibata, T; Onishi, N; Ansari, A; Horibata, Takatoshi; Oi, Makito; Onishi, Naoki; Ansari, Ahmad
1999-01-01
Band structure properties of $^{182}$Os are investigated through a particle number and angular momentum constrained generator coordinate(GCM) calculation based on self-consistent three-dimensional cranking solutions. From the analysis of the wave function of the lowest GCM solution, we confirm that this nucleus shows a tilted rotational motion in its yrast states, at least with the present set of force parameters of the pairing-plus-quadrupole interaction Hamiltonian. A close examination of behavior of other GCM solutions reveals a sign of a possible occurrence of multi-band crossing in the nucleus. Furthermore, in the course of calculations, we have also found a new potential curve along the prime meridian on the globe of the $J=18\\hbar$ sphere. Along this new solution the characters of proton and neutron gap parameters get interchanged. Namely, $\\Delta_p$ almost vanishes while $\\Delta_n$ grows to a finite value close to the one corresponding to the principal axis rotation(PAR). A state in the new solution c...
The band structures of BSb and BxGa1-xSb alloys
Institute of Scientific and Technical Information of China (English)
无
2009-01-01
The band structures of BSb and BxGa1-xSb alloys are studied using first-principles calculations in the generalized gradient approximation. By SQS-8 supercells to model a random alloy, the direct transition energy-gap (Γ15v- Γ1c) bowing of 3.0 eV is obtained for BxGa1-xSb alloys in x = 0-50%, in x = 0-11% the energy-gap is the band-gap and increases by 7 meV/%B with boron composition increasing; by SQS-16 supercells the bowing parameter is about 1.9 eV in x = 0-12.5%. The formation enthalpies of mixing, ΔH, are calculated for BxGa1-xAs and BxGa1-xSb alloys. A comparison of enthalpies indicates that BxGa1-xSb films with boron composition of 7% may be possible.
Design and analysis of defected ground structure transformer for dual-band antenna
Directory of Open Access Journals (Sweden)
Wai-Wa Choi
2014-12-01
Full Text Available This study presents a novel dual-band antenna design methodology utilising a dual-frequency impedance transformer with defected ground structure (DGS. The proposed dual-frequency DGS impedance transformer generates a second resonant frequency from a conventional single-band antenna, resulting dual-band operation. Simulation studies illustrate that the adopted design achieves versatile configurations for arbitrary operating frequencies and diverse input impedance ranges in planar antenna structures. To experimentally verify the proposed design methodology, a dual-frequency DGS impedance transformer was implemented for a 2.4 GHz monopole antenna to obtain a 900/2400 MHz dual-band antenna. Measurement shows that the 10 dB return loss bandwidth in 900 MHz band is 34.4 MHz, whereas that in 2400 MHz band is wider than 530 MHz. Typical monopole radiation patterns are observed at both operating bands.
International Nuclear Information System (INIS)
The photonic band gap of obliquely incident terahertz electromagnetic waves in a one-dimensional plasma photonic crystal is studied. The periodic structure consists of lossless dielectric and inhomogeneous plasma with a parabolic density profile. The dispersion relation and the THz wave transmittance are analyzed based on the electromagnetic equations and transfer matrix method. The dependence of effective plasma frequency and photonic band gap characteristics on dielectric and plasma thickness, plasma density, and incident angle are discussed in detail. A theoretical calculation for effective plasma frequency is presented and compared with numerical results. Results of these two methods are in good agreement
Energy Technology Data Exchange (ETDEWEB)
Gu, Zhi-Gang [Institut für Funktionelle Grenzflächen (IFG), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002 Fuzhou (China); Heinke, Lars, E-mail: Lars.Heinke@KIT.edu; Wöll, Christof [Institut für Funktionelle Grenzflächen (IFG), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Neumann, Tobias; Wenzel, Wolfgang; Li, Qiang; Fink, Karin [Institute of Nanotechnology (INT), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Gordan, Ovidiu D.; Zahn, Dietrich R. T. [Semiconductor Physics, Technische Universität Chemnitz, 09107 Chemnitz (Germany)
2015-11-02
The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly “simple” MOF, the excitation spectra cannot be explained by a superposition of “intra-unit” excitations within the individual building blocks. Instead, “inter-unit” excitations also have to be considered.
Energy Technology Data Exchange (ETDEWEB)
Babitsky, Nicolay A.; Leshok, Darya Y.; Mikhaleva, Natalia S. [Siberian Federal University, 79 Svobodny Av, Krasnoyarsk, 660041 (Russian Federation); Kuzubov, Aleksandr A., E-mail: alexkuzubov@gmail.com [Siberian Federal University, 79 Svobodny Av, Krasnoyarsk, 660041 (Russian Federation); Institute of Physics SB RAS, Krasnoyarsk 660036 (Russian Federation); Zhereb, Vladimir P. [Siberian Federal University, 79 Svobodny Av, Krasnoyarsk, 660041 (Russian Federation); Kirik, Sergei D., E-mail: kiriksd@yandex.ru [Siberian Federal University, 79 Svobodny Av, Krasnoyarsk, 660041 (Russian Federation)
2015-08-01
New bismuth borophosphate Bi{sub 4}BPO{sub 10} was obtained by spontaneous crystallization from the melt of correspondent composition at 804 °C. Crystal structure with orthorhombic lattice parameters: a = 22.5731(3) Å, b = 14.0523(2) Å, c = 5.5149(1) Å, V = 1749.34(4), Z = 8, SG Pcab was determined by X-ray powder diffraction technique. The [Bi{sub 2}O{sub 2}]{sup 2+} -layers, which are typical for bismuth oxide compounds, transform into cationic endless strips of 4 bismuth atoms width directed along the c-axis in Bi{sub 4}BPO{sub 10}. The strips combining stacks are separated by flat triangle [BO{sub 3}]{sup 3−} -anions within stacks. Neighboring stacks are separated by tetrahedral [PO{sub 4}]{sup 3−}-anions and shifted relatively to each other. Bismuth atoms are placed in 5–7 vertex oxygen irregular polyhedra. Bi{sub 4}BPO{sub 10} is stable up to 812 °C, then melts according to the peritectic law. The absorption spectrum in the range 350–700 nm was obtained and the width of the forbidden band was estimated as 3.46 eV. The band electronic structure of Bi{sub 4}BPO{sub 10} was modeled using DFT approach. The calculated band gap (3.56 eV) is in good agreement with the experimentally obtained data. - Graphical abstract: Display Omitted - Highlights: • New bismuth borophosphate with composition Bi{sub 4}BPO{sub 10} was synthesized. • The crystal structure was determined by X-ray powder diffraction technique. • Bismuth-oxygen part [Bi{sub 4}O{sub 3}]{sup 6+} forms endless strips of 4 bismuth atoms width. • Electronic structure was modeled by DFT method. • The calculated band gap (3.56 eV) is very close to the experimental one (3.46 eV)
Photonic band structures in one-dimensional photonic crystals containing Dirac materials
International Nuclear Information System (INIS)
We have investigated the band structures of one-dimensional photonic crystals (1DPCs) composed of Dirac materials and ordinary dielectric media. It is found that there exist an omnidirectional passing band and a kind of special band, which result from the interaction of the evanescent and propagating waves. Due to the interface effect and strong dispersion, the electromagnetic fields inside the special bands are strongly enhanced. It is also shown that the properties of these bands are invariant upon the lattice constant but sensitive to the resonant conditions
Institute of Scientific and Technical Information of China (English)
Morimasa Takata; Hitoshi Shoji; Atsushi Miyamoto; Kimiko Shimohara
2003-01-01
Cloudy bands are typical stratigraphic structure in deep ice core.Detailed recording of cloudy bands is important for dating of ice core since pair of series cloudy band and clear layer is corresponds to annual layer and it sometimes corresponds to volcanic ash layer.We developed two type scanners, transmitted light method and laser tomograph method for the stratigraphic study.Measurements were carried out for NGRIP deep ice core, which containing many cloudy bands, using the two type scanners and digital camera.We discussed about the possibility of identification of cloudy bands by each method and about advantage and disadvantage of measurements and their results.
The structural and electronic properties of amorphous HgCdTe from first-principles calculations
International Nuclear Information System (INIS)
Amorphous mercury cadmium telluride (a-MCT) model structures, with x being 0.125 and 0.25, are obtained from first-principles calculations. We generate initial structures by computation alchemy method. It is found that most atoms in the network of amorphous structures tend to be fourfold and form tetrahedral structures, implying that the chemical ordered continuous random network with some coordination defects is the ideal structure for a-MCT. The electronic structure is also concerned. The gap is found to be 0.30 and 0.26 eV for a-Hg0.875Cd0.125Te and a-Hg0.75Cd0.25Te model structures, independent of the composition. By comparing with the properties of crystalline MCT with the same composition, we observe a blue-shift of energy band gap. The localization of tail states and its atomic origin are also discussed. (paper)
Birefringence and band structure of CdP{sub 2} crystals
Energy Technology Data Exchange (ETDEWEB)
Beril, S.I.; Stamov, I.G. [Tiraspol State Corporative University, Yablocikin Street 5, 2069 Tiraspol, Republic of Moldova (Moldova, Republic of); Syrbu, N.N., E-mail: sirbunn@yahoo.com [Technical University of Moldova, 168 Stefan cel Mare Avenue, 2004 Chisinau, Republic of Moldova (Moldova, Republic of); Zalamai, V.V. [Institute of Applied Physics, Academy of Sciences of Moldova, 5 Academy Street, 2028 Chisinau, Republic of Moldova (Moldova, Republic of)
2013-08-01
The spatial dispersion in CdP{sub 2} crystals was investigated. The dispersion is positive (n{sup k||c}>n{sup k||y}) at λ>λ{sub 0} and negative (n{sup k||c}
Band structure of Heusler compounds studied by photoemission and tunneling spectroscopy
Energy Technology Data Exchange (ETDEWEB)
Arbelo Jorge, Elena
2011-07-01
Heusler compounds are key materials for spintronic applications. They have attracted a lot of interest due to their half-metallic properties predicted by band structure calculations. The aim of this work is to evaluate experimentally the validity of the predictions of half metallicity by band structure calculations for two specific Heusler compounds, Co{sub 2}FeAl{sub 0.3}Si{sub 0.7} and Co{sub 2}MnGa. Two different spectroscopy methods for the analysis of the electronic properties were used: Angular Resolved Ultraviolet Photoemission Spectroscopy (ARUPS) and Tunneling Spectroscopy. Heusler compounds are prepared as thin films by RF-sputtering in an ultra high vacuum system. For the characterization of the samples, bulk and surface crystallographic and magnetic properties of Co{sub 2}FeAl{sub 0.3}Si{sub 0.7} and Co{sub 2}MnGa are studied. X-ray and electron diffraction reveal a bulk and surface crossover between two different types of sublattice order (from B2 to L2{sub 1}) with increasing annealing temperature. X-ray magnetic circular dichroism results show that the magnetic properties in the surface and bulk are identical, although the magnetic moments obtained are 5 % below from the theoretically predicted. By ARUPS evidence for the validity of the predicted total bulk density of states (DOS) was demonstrated for both Heusler compounds. Additional ARUPS intensity contributions close to the Fermi energy indicates the presence of a specific surface DOS. Moreover, it is demonstrated that the crystallographic order, controlled by annealing, plays an important role on broadening effects of DOS features. Improving order resulted in better defined ARUPS features. Tunneling magnetoresistance measurements of Co{sub 2}FeAl{sub 0.3}Si{sub 0.7} and Co{sub 2}MnGa based MTJ's result in a Co{sub 2}FeAl{sub 0.3}Si{sub 0.7} spin polarization of 44 %, which is the highest experimentally obtained value for this compound, although it is lower than the 100 % predicted. For Co
Phononic First Band Gap of Quaternary Layered Periodic Structure with the Lumped-Mass Method
Directory of Open Access Journals (Sweden)
Chen Yuan
2014-01-01
Full Text Available Existing band gap analysis is mostly focused on the binary structure, while the researches on the quaternary layered periodic structure are still lacking. In this paper, the unidimensional lumped-mass method in the phonic crystal theory is firstly improved so that the material viscoelasticity can be taken into consideration. Then, the binary layered periodic structure is converted into a quaternary one and band gaps appear at low frequency range. Finally, the effects of density, elastic modulus, damping ratio, and the thickness of single material on the first band gap of the quaternary layered periodic structure are analyzed after the algorithm is promoted. The research findings show that effects of density, elastic modulus, and thickness of materials on the first band gap are considerable but those of damping ratio are not so distinct. This research provides theoretical bases for band gap design of the quaternary layered periodic structure.
Physical properties and electronic band structure of noncentrosymmetric Th7Co3 superconductor.
Sahakyan, M; Tran, V H
2016-05-25
The physical properties of the noncentrosymmetric superconductor Th7Co3 have been investigated by means of ac-magnetic susceptibility, magnetization, specific heat, electrical resistivity, magnetoresistance and Hall effect measurements. From these data it is established that Th7Co3 is a dirty type-II superconductor with [Formula: see text] K, [Formula: see text] and moderate electron-phonon coupling [Formula: see text]. Some evidences for anisotropic superconducting gap are found, including e.g. reduced specific heat jump ([Formula: see text]) at T c, diminished superconducting energy gap ([Formula: see text]) as compared to the BCS values, power law field dependence of the Sommerfeld coefficient at 0.4 K ([Formula: see text]), and a concave curvature of the [Formula: see text] line. The magnitudes of the thermodynamic critical field and the energy gap are consistent with mean-squared anisotropy parameter [Formula: see text]. The electronic specific heat in the superconducting state is reasonably fitted to an oblate spheroidal gap model. Calculations of scalar relativistic and fully relativistic electronic band structures reveal considerable differences in the degenerate structure, resulting from asymmetric spin-orbit coupling (ASOC). A large splitting energy of spin-up spin-down bands at the Fermi level E F, [Formula: see text] meV is observed and a sizeable ratio [Formula: see text] could classify the studied compound into the class of noncentrosymmetric superconductors with strong ASOC. The noncentrosymmetry of the crystal structure and the atomic relativistic effects are both responsible for an importance of ASOC in Th7Co3. The calculated results for the density of states show a Van Hove singularity just below E F and dominant role of the 6d electrons of Th to the superconductivity.
Ab-initio calculations of electronic structure and optical properties of TiAl alloy
Energy Technology Data Exchange (ETDEWEB)
Hussain, Altaf [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur 63120 (Pakistan); Sikandar Hayat, Sardar, E-mail: sikandariub@yahoo.co [Department of Physics, Hazara University, Mansehra 21300 (Pakistan); Choudhry, M.A. [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur 63120 (Pakistan)
2011-05-01
The electronic structures and optical properties of TiAl intermetallic alloy system are studied by the first-principle orthogonalized linear combination of atomic orbitals method. Results on the band structure, total and partial density of states, localization index, effective atomic charges, and optical conductivity are presented and discussed in detail. Total density of states spectra reveal that (near the Fermi level) the majority of the contribution is from Ti-3d states. The effective charge calculations show an average charge transfer of 0.52 electrons from Ti to Al in primitive cell calculations of TiAl alloy. On the other hand, calculations using supercell approach reveal an average charge transfer of 0.48 electrons from Ti to Al. The localization index calculations, of primitive cell as well as of supercell, show the presence of relatively localized states even above the Fermi level for this alloy. The calculated optical conductivity spectra of TiAl alloy are rich in structures, showing the highest peak at 5.73 eV for supercell calculations. Calculations of the imaginary part of the linear dielectric function show a prominent peak at 5.71 eV and a plateau in the range 1.1-3.5 eV.
Zhong, Hongxia; Quhe, Ruge; Wang, Yangyang; Ni, Zeyuan; Ye, Meng; Song, Zhigang; Pan, Yuanyuan; Yang, Jinbo; Yang, Li; Lei, Ming; Shi, Junjie; Lu, Jing
2016-03-01
Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal contacts has not been well understood yet. We provide a comprehensive ab initio study of the interfacial properties of a series of monolayer (ML) and bilayer (BL) MoS2-metal contacts (metal = Sc, Ti, Ag, Pt, Ni, and Au). A comparison between the calculated and observed Schottky barrier heights (SBHs) suggests that many-electron effects are strongly suppressed in channel 2D MoS2 due to a charge transfer. The extensively adopted energy band calculation scheme fails to reproduce the observed SBHs in 2D MoS2-Sc interface. By contrast, an ab initio quantum transport device simulation better reproduces the observed SBH in 2D MoS2-Sc interface and highlights the importance of a higher level theoretical approach beyond the energy band calculation in the interface study. BL MoS2-metal contacts generally have a reduced SBH than ML MoS2-metal contacts due to the interlayer coupling and thus have a higher electron injection efficiency.
Zhong, Hongxia; Quhe, Ruge; Wang, Yangyang; Ni, Zeyuan; Ye, Meng; Song, Zhigang; Pan, Yuanyuan; Yang, Jinbo; Yang, Li; Lei, Ming; Shi, Junjie; Lu, Jing
2016-01-01
Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal contacts has not been well understood yet. We provide a comprehensive ab initio study of the interfacial properties of a series of monolayer (ML) and bilayer (BL) MoS2-metal contacts (metal = Sc, Ti, Ag, Pt, Ni, and Au). A comparison between the calculated and observed Schottky barrier heights (SBHs) suggests that many-electron effects are strongly suppressed in channel 2D MoS2 due to a charge transfer. The extensively adopted energy band calculation scheme fails to reproduce the observed SBHs in 2D MoS2-Sc interface. By contrast, an ab initio quantum transport device simulation better reproduces the observed SBH in 2D MoS2-Sc interface and highlights the importance of a higher level theoretical approach beyond the energy band calculation in the interface study. BL MoS2-metal contacts generally have a reduced SBH than ML MoS2-metal contacts due to the interlayer coupling and thus have a higher electron injection efficiency.
Experimental Study Of X-band Dielectric-loaded Accelerating Structures
Jing, C
2005-01-01
A joint Argonne National Laboratory (ANL)/Naval Research Laboratory (NRL) program is under way to investigate X- band dielectric-loaded accelerating (DLA) structures, using high-power 11.424GHz radiation from the NRL Magnicon facility. As an advanced accelerator concepts, the dielectric-loaded accelerator offers the potential for a simple, inexpensive alternative to high-gradient RF linear accelerators. In this thesis, a comprehensive account of X-band DLA structure design, including theoretical calculation, numerical simulation, fabrication and testing, is presented in detail. Two types of loading dielectrics, alumina and MgxCa1−xTiO 3 (MCT), are investigated. For alumina (with dielectric constant 9.4), no RF breakdown has been observed up to 5 MW of drive power (equivalent to 8MV/m accelerating gradient) in the high power RF testing at NRL, but multipactor was observed to absorb a large fraction of the incident microwave power. Experimental results on suppression of multipactor using TiN coating o...
Effect of acicular ferrite on banded structures in low-carbon microalloyed steel
Institute of Scientific and Technical Information of China (English)
Lei Shi; Ze-sheng Yan; Yong-chang Liu; Xu Yang; Cheng Zhang; Hui-jun Li
2014-01-01
The effect of acicular ferrite (AF) on banded structures in low-carbon microalloyed steel with Mn segregation during both iso-thermal transformation and continuous cooling processes was studied by dilatometry and microscopic observation. With respect to the iso-thermal transformation process, the specimen isothermed at 550°C consisted of AF in Mn-poor bands and martensite in Mn-rich bands, whereas the specimen isothermed at 450°C exhibited two different morphologies of AF that appeared as bands. At a continuous cooling rate in the range of 4 to 50°C/s, a mixture of AF and martensite formed in both segregated bands, and the volume fraction of martensite in Mn-rich bands was always higher than that in Mn-poor bands. An increased cooling rate resulted in a decrease in the difference of martensite volume fraction between Mn-rich and Mn-poor bands and thereby leaded to less distinct microstructural banding. The results show that Mn segregation and cooling rate strongly affect the formation of AF-containing banded structures. The formation mechanism of microstructural banding was also discussed.
Study on relationships of electromagnetic band structures and left/right handed structures
Institute of Scientific and Technical Information of China (English)
GAO Chu; CHEN ZhiNing; WANG YunYi; YANG Ning
2007-01-01
Two types of dual periodic circuits are introduced. The distributions of passbands and stopbands are generated from their dispersion relationships. Based on the study, Brillouin diagrams of three representative special cases are drawn; S parameters of these three cases are simulated by Aglient ADS; the S parameters of one of the three cases are verified by an experiment. The phase characteristics are compared with those generated from the dispersion relationship. The theoretical analysis and the experimental verification show that both types of the periodic structures can behave as electromagnetic band gap (EBG) structures, right-handed structures (RHS), and left-handed structures (LHS), when they operate at different frequency ranges. Thus, the possibility of a physical structure showing these three different characteristics at different frequency ranges is proven.
Vibronic-structure tracking: A shortcut for vibrationally resolved UV/Vis-spectra calculations
Energy Technology Data Exchange (ETDEWEB)
Barton, Dennis; König, Carolin; Neugebauer, Johannes, E-mail: j.neugebauer@uni-muenster.de [Theoretische Organische Chemie, Organisch-Chemisches Institut and Center for Multiscale Theory and Computation, Westfälische Wilhelms-Universität Münster, Corrensstraße 40, 48149 Münster (Germany)
2014-10-28
The vibrational coarse structure and the band shapes of electronic absorption spectra are often dominated by just a few molecular vibrations. By contrast, the simulation of the vibronic structure even in the simplest theoretical models usually requires the calculation of the entire set of normal modes of vibration. Here, we exploit the idea of the mode-tracking protocol [M. Reiher and J. Neugebauer, J. Chem. Phys. 118, 1634 (2003)] in order to directly target and selectively calculate those normal modes which have the largest effect on the vibronic band shape for a certain electronic excitation. This is achieved by defining a criterion for the importance of a normal mode to the vibrational progressions in the absorption band within the so-called “independent mode, displaced harmonic oscillator” (IMDHO) model. We use this approach for a vibronic-structure investigation for several small test molecules as well as for a comparison of the vibronic absorption spectra of a truncated chlorophyll a model and the full chlorophyll a molecule. We show that the method allows to go beyond the often-used strategy to simulate absorption spectra based on broadened vertical excitation peaks with just a minimum of computational effort, which in case of chlorophyll a corresponds to about 10% of the cost for a full simulation within the IMDHO approach.
Parallel adaptive mesh refinement for electronic structure calculations
Energy Technology Data Exchange (ETDEWEB)
Kohn, S.; Weare, J.; Ong, E.; Baden, S.
1996-12-01
We have applied structured adaptive mesh refinement techniques to the solution of the LDA equations for electronic structure calculations. Local spatial refinement concentrates memory resources and numerical effort where it is most needed, near the atomic centers and in regions of rapidly varying charge density. The structured grid representation enables us to employ efficient iterative solver techniques such as conjugate gradients with multigrid preconditioning. We have parallelized our solver using an object-oriented adaptive mesh refinement framework.
Phononic band gaps and vibrations in one- and two-dimensional mass-spring structures
DEFF Research Database (Denmark)
Jensen, Jakob Søndergaard
2003-01-01
The vibrational response of finite periodic lattice structures subjected to periodic loading is investigated. Special attention is devoted to the response in frequency ranges with gaps in the band structure for the corresponding infinite periodic lattice. The effects of boundaries, viscous damping......, and imperfections are studied by analyzing two examples; a 1-D filter and a 2-D wave guide. In 1-D the structural response in the band gap is shown to be insensitive to damping and small imperfections. In 2-D the similar effect of damping is noted for one type of periodic structure, whereas for...... another type the band gap effect is nearly eliminated by damping. In both 1-D and 2-D it is demonstrated how the free structural boundaries affect the response in the band gap due to local resonances. Finally, 2-D wave guides are considered by replacing the periodic structure with a homogeneous structure...
Gumhalter, Branko; Kovač, Vjekoslav; Caruso, Fabio; Lambert, Henry; Giustino, Feliciano
2016-07-01
Since the earliest implementations of the various GW approximations and cumulant expansion in the calculations of quasiparticle propagators and spectra, several attempts have been made to combine the advantageous properties and results of these two theoretical approaches. While the GW-plus-cumulant approach has proven successful in interpreting photoemission spectroscopy data in solids, the formal connection between the two methods has not been investigated in detail. By introducing a general bijective integral representation of the cumulants, we can rigorously identify at which point these two approximations can be connected for the paradigmatic model of quasiparticle interaction with the dielectric response of the system that has been extensively exploited in recent interpretations of the satellite structures in photoelectron spectra. We establish a protocol for consistent practical implementation of the thus established GW +cumulant scheme and illustrate it by comprehensive state-of-the-art first-principles calculations of intrinsic angle-resolved photoemission spectra from Si valence bands.
Dhingra, Deepak; Hedman, Matthew M.; Clark, Roger N.
2015-11-01
Water ice particles in Enceladus’ plume display their diagnostic 3-micron absorption band in Cassini VIMS data. These near infrared measurements of the plume also exhibit noticeable variations in the character of this band. Mie theory calculations reveal that the shape and location of the 3-micron band are controlled by a number of environmental and structural parameters. Hence, this band provides important insights into the properties of the water ice grains and about the subsurface environmental conditions under which they formed. For example, the position of the 3-micron absorption band minimum can be used to distinguish between crystalline and amorphous forms of water ice and to constrain the formation temperature of the ice grains. VIMS data indicates that the water ice grains in the plume are dominantly crystalline which could indicate formation temperatures above 113 K [e.g. 1, 2]. However, there are slight (but observable) variations in the band minimum position and band shape that may hint at the possibility of varying abundance of amorphous ice particles within the plume. The modeling results further indicate that there are systematic shifts in band minimum position with temperature for any given form of ice but the crystalline and amorphous forms of water ice are still distinguishable at VIMS spectral resolution. Analysis of the eruptions from individual source fissures (tiger stripes) using selected VIMS observations reveal differences in the 3-micron band shape that may reflect differences in the size distributions of the water ice particles along individual fissures. Mie theory models suggest that big ice particles (>3 micron) may be an important component of the plume.[1] Kouchi, A., T. Yamamoto, T. Kozasa, T. Kuroda, and J. M. Greenberg (1994) A&A, 290, 1009-1018 [2] Mastrapa, R. M. E., W. M. Grundy, and M. S. Gudipati (2013) in M. S. Gudipati and J. Castillo-Rogez (Eds.), The Science of Solar System Ices, pp. 371.
Band structures of TiO2 doped with N, C and B
Institute of Scientific and Technical Information of China (English)
无
2006-01-01
This study on the band structures and charge densities of nitrogen (N)-, carbon (C)- and boron (B)-doped titanium dioxide (TiO2) by first-principles simulation with the CASTEP code (Segall et al., 2002) showed that the three 2p bands of impurity atom are located above the valence-band maximum and below the Ti 3d bands, and that along with the decreasing of impurity atomic number, the fluctuations become more intensive. We cannot observe obvious band-gap narrowing in our result.Therefore, the cause of absorption in visible light might be the isolated impurity atom 2p states in band-gap rather than the band-gap narrowing.
Atomic structure calculations of Mo XV-XL
International Nuclear Information System (INIS)
Energy levels and oscillator strengths were calculated for Mo XV - Mo XL. The computer program for atomic structure calculation, developed by Dr. Robert D. Cowan, Los Alamos National Laboratory, was used in the present work. The scaled energy parameters were empirically determined from the observed spectral data. We present wavelengths and transition probabilities of Mo XV-XL. Energy levels and spectral patterns are presented in figures that are useful for the identification of spectral lines. (author)
Band structure of germanium carbides for direct bandgap silicon photonics
Stephenson, C. A.; O'Brien, W. A.; Penninger, M. W.; Schneider, W. F.; Gillett-Kunnath, M.; Zajicek, J.; Yu, K. M.; Kudrawiec, R.; Stillwell, R. A.; Wistey, M. A.
2016-08-01
Compact optical interconnects require efficient lasers and modulators compatible with silicon. Ab initio modeling of Ge1-xCx (x = 0.78%) using density functional theory with HSE06 hybrid functionals predicts a splitting of the conduction band at Γ and a strongly direct bandgap, consistent with band anticrossing. Photoreflectance of Ge0.998C0.002 shows a bandgap reduction supporting these results. Growth of Ge0.998C0.002 using tetrakis(germyl)methane as the C source shows no signs of C-C bonds, C clusters, or extended defects, suggesting highly substitutional incorporation of C. Optical gain and modulation are predicted to rival III-V materials due to a larger electron population in the direct valley, reduced intervalley scattering, suppressed Auger recombination, and increased overlap integral for a stronger fundamental optical transition.
van der Waals binding and band structure effects in graphene overlayers and graphane multilayers
Hyldgaard, Per; Rohrer, Jochen
2011-03-01
We study graphene formation (by selective Si evaporation) and adhesion on SiC surfaces as well as stacking and binding of graphane multilayers using a number of versions of the van der Waals Density Functional (vdW-DF) method and plane-wave density functional theory calculations. For the graphene/SiC systems and for the graphane multilayers we document that the bonding is entirely dominated by van der Waals (vdW) forces. At the same time we find that dispersive forces acting on the layers produce significant modifications in the graphene and graphane band structure. We interpret the changes and discuss a competition between wave function hybridization and interaction with the charge enhancement (between the layers) that results from density overlap. Supported by Svenska Vetenskapsrådet VR #621-2008-4346.
Novel structure for magnetic rotation bands in 60Ni
Zhao, P. W.; Zhang, S.Q.; Peng, J.; H.Z. Liang; Ring, P.; Meng, J
2011-01-01
The self-consistent tilted axis cranking relativistic mean-field theory based on a point-coupling interaction has been established and applied to investigate systematically the newly observed shears bands in 60Ni. The tilted angles, deformation parameters, energy spectra, and reduced M1 and $E2$ transition probabilities have been studied in a fully microscopic and self-consistent way for various configurations and rotational frequencies. It is found the competition between the configurations ...
Real Space Approach to Electronic-Structure Calculations
Tsuchida, E; Tsuchida, Eiji; Tsukada, Masaru
1994-01-01
We have applied the Finite Element Method to the self-consistent electronic structure calculations of molecules and solids for the first time. In this approach all the calculations are performed in "real space" and the use of non-uniform mesh is made possible, thus enabling us to deal with localized systems with ease. To illustrate the utility of this method, we perform an all-electron calculation of hydrogen molecule in a supercell with LDA approximation. Our method is also applicable to mesoscopic systems.
DEFF Research Database (Denmark)
Rasmussen, Filip Anselm; Schmidt, Per Simmendefeldt; Winther, Kirsten Trøstrup;
2016-01-01
Calculating the quasiparticle (QP) band structure of two-dimensional (2D) materials within the GW self-energy approximation has proven to be a rather demanding computational task. The main reason is the strong q dependence of the 2D dielectric function around q = 0 that calls for a much denser...
Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies
Rehman, Gul; Shafiq, M.; Saifullah; Ahmad, Rashid; Jalali-Asadabadi, S.; Maqbool, M.; Khan, Imad; Rahnamaye-Aliabad, H.; Ahmad, Iftikhar
2016-07-01
The correct band gaps of semiconductors are highly desirable for their effective use in optoelectronic and other photonic devices. However, the experimental and theoretical results of the exact band gaps are quite challenging and sometimes tricky. In this article, we explore the electronic band structures of the highly desirable optical materials, III-V semiconductors. The main reason of the ineffectiveness of the theoretical band gaps of these compounds is their mixed bonding character, where large proportions of electrons reside outside atomic spheres in the intestinal regions, which are challenging for proper theoretical treatment. In this article, the band gaps of the compounds are revisited and successfully reproduced by properly treating the density of electrons using the recently developed non-regular Tran and Blaha's modified Becke-Johnson (nTB-mBJ) approach. This study additionally suggests that this theoretical scheme could also be useful for the band gap engineering of the III-V semiconductors. Furthermore, the optical properties of these compounds are also calculated and compared with the experimental results.
Xiao, Ling-Ping; Zeng, Zhi; Chen, Xiao-Jia
2016-06-01
The pressure effect on the geometrical and electronic structures of crystalline naphthalene is calculated up to 30 GPa by performing density functional calculations. The lattice parameters a, b, and c, decrease by 1.77 Å (-20.4%), 0.85 Å (-14.1%), and 0.91 Å (-8.2%), respectively, while the monoclinic angle β increases by 3.95° in this pressure region. At the highest pressure of 30 GPa the unit cell volume decreases by 62.7%. The detailed analysis of the molecular arrangement within crystal structure reveals that the molecular motion becomes more and more localized, and hints towards the evolution of intermolecular interaction with pressure. Moreover, the electronic structure of naphthalene under high pressure is also discussed. A pressure induced decrease of the band gap is observed.
Electronic structure of Co-phthalocyanine calculated by GGA+U and hybrid functional methods
International Nuclear Information System (INIS)
Graphical abstract: Electronic structure of Co-phthalocyanine molecule has been calculated using GGA+U and B3LYP methods. The results are in good agreement with experimental observations. Abstract: Electronic structure calculations have been performed for the Co-phthalocyanine molecule using density functional theory (DFT) within the framework of Generalized Gradient Approximation (GGA). The electronic correlation in Co 3d orbitals is treated in terms of the GGA+U method in the framework of the Hubbard model. We find that for U = 6 eV, the calculated structural parameters as well as the spectral features are in good agreement with the experimental findings. From our calculation both the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) are dominated by the pyrrole carbon, with a HOMO-LUMO gap of about 1.4 eV. The GGA+U results obtained with U = 6 eV compare reasonably well with the calculations performed using Gaussian basis set and hybrid functionals in terms of ground state geometry, spin state and spectral features. The calculated valence band photoemission spectrum is in quite good agreement with the recently published experimental results.
Institute of Scientific and Technical Information of China (English)
Ye Xiao-Qiu; Luo De-Li; Sang Ge; Ao Bing-Yun
2011-01-01
The alanates (complex aluminohydrides) have relatively high gravimetric hydrogen densities and are among the most promising solid-state hydrogen-storage materials. In this work, the electronic structures and the formation enthalpies of seven typical aluminum-based deuterides have been calculated by the plane-wave pseudopotential method,these being AID3, LiAID4, Li3AID6, BaAID5, Ba2AID7, LiMg(AID4)3 and LiMgAID6. The results show that all these compounds are large band gap insulators at 0 K with estimated band gaps from 2.31 eV in AID3 to 4.96 eV in LiMg(AID4)3. The band gaps are reduced when the coordination of Al varies from 4 to 6. Two peaks present in the valence bands are the common characteristics of aluminum-based deuterides containing AID4 subunits while three peaks are the common characteristics of those containing AID6 subunits. The electronic structures of these compounds are determined mainly by aluminum deuteride complexes (AID4 or AID6) and their mutual interactions. The predicted formation enthalpies are presented for the studied aluminum-based deuterides.
Ab initio calculations of the electronic structure and bonding characteristics of LaB6
Hossain, Faruque M.; Riley, Daniel P.; Murch, Graeme E.
2005-12-01
Lanthanum hexaboride ( LaB6 , NIST SRM-660a) is widely used as a standard reference material for calibrating the line position and line shape parameters of powder diffraction instruments. The accuracy of this calibration technique is highly dependent on how completely the reference material is characterized. Critical to x-ray diffraction, this understanding must include the valence of the La atomic position, which in turn will influence the x-ray form factor (f) and hence the diffracted intensities. The electronic structure and bonding properties of LaB6 have been investigated using ab initio plane-wave pseudopotential total energy calculations. The electronic properties and atomic bonding characteristics were analyzed by estimating the energy band structure and the density of states around the Fermi energy level. The calculated energy band structure is consistent with previously reported experimental findings; de Haas-van Alphen and two-dimensional angular correlation of electron-positron annihilation radiation. In addition, the bond strengths and types of atomic bonds in the LaB6 compound were estimated by analyzing the Mulliken charge density population. The calculated result revealed the coexistence of covalent, ionic, and metallic bonding in the LaB6 system and partially explains its high efficiency as a thermionic emitter.
Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS
Energy Technology Data Exchange (ETDEWEB)
Kozyukhin, S., E-mail: sergkoz@igic.ras.ru [Russian Academy of Science, Institute of General and Inorganic Chemistry (Russian Federation); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Kovalskiy, A. [Lehigh University, Department of Materials Science and Engineering (United States); Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Jain, H. [Lehigh University, Department of Materials Science and Engineering (United States)
2011-04-15
High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.
Real-time feedback from iterative electronic structure calculations
Vaucher, Alain C; Reiher, Markus
2015-01-01
Real-time feedback from iterative electronic structure calculations requires to mediate between the inherently unpredictable execution times of the iterative algorithm employed and the necessity to provide data in fixed and short time intervals for real-time rendering. We introduce the concept of a mediator as a component able to deal with infrequent and unpredictable reference data to generate reliable feedback. In the context of real-time quantum chemistry, the mediator takes the form of a surrogate potential that has the same local shape as the first-principles potential and can be evaluated efficiently to deliver atomic forces as real-time feedback. The surrogate potential is updated continuously by electronic structure calculations and guarantees to provide a reliable response to the operator for any molecular structure. To demonstrate the application of iterative electronic structure methods in real-time reactivity exploration, we implement self-consistent semi-empirical methods as the data source and a...
Energy Technology Data Exchange (ETDEWEB)
Datta, Soumendu, E-mail: soumendu@bose.res.in; Baral, Sayan; Mookerjee, Abhijit [Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences, JD Block, Sector-III, Salt Lake City, Kolkata 700 098 (India); Kaphle, Gopi Chandra [Central Department of Physics, Tribhuvan University, Kathmandu (Nepal)
2015-08-28
Using density functional theory (DFT) based electronic structure calculations, the effects of morphology of semiconducting nanostructures on the magnetic interaction between two magnetic dopant atoms as well as a possibility of tuning band gaps have been studied in the case of the bi-doped (ZnO){sub 24} nanostructures with the impurity dopant atoms of the 3d late transition metals—Mn, Fe, Co, Ni, and Cu. To explore the morphology effect, three different structures of the host (ZnO){sub 24} nano-system, having different degrees of spatial confinement, have been considered: a two dimensional nanosheet, a one dimensional nanotube, and a finite cage-shaped nanocluster. The present study employs hybrid density functional theory to accurately describe the electronic structure of all the systems. It is shown here that the magnetic coupling between the two dopant atoms remains mostly anti-ferromagnetic in the course of changing the morphology from the sheet geometry to the cage-shaped geometry of the host systems, except for the case of energetically most stable bi-Mn doping, which shows a transition from ferromagnetic to anti-ferromagnetic coupling with decreasing aspect ratio of the host system. The effect of the shape change, however, has a significant effect on the overall band gap variations of both the pristine as well as all the bi-doped systems, irrespective of the nature of the dopant atoms and provides a means for easy tunability of their optoelectronic properties.
Datta, Soumendu; Kaphle, Gopi Chandra; Baral, Sayan; Mookerjee, Abhijit
2015-08-01
Using density functional theory (DFT) based electronic structure calculations, the effects of morphology of semiconducting nanostructures on the magnetic interaction between two magnetic dopant atoms as well as a possibility of tuning band gaps have been studied in the case of the bi-doped (ZnO)24 nanostructures with the impurity dopant atoms of the 3d late transition metals—Mn, Fe, Co, Ni, and Cu. To explore the morphology effect, three different structures of the host (ZnO)24 nano-system, having different degrees of spatial confinement, have been considered: a two dimensional nanosheet, a one dimensional nanotube, and a finite cage-shaped nanocluster. The present study employs hybrid density functional theory to accurately describe the electronic structure of all the systems. It is shown here that the magnetic coupling between the two dopant atoms remains mostly anti-ferromagnetic in the course of changing the morphology from the sheet geometry to the cage-shaped geometry of the host systems, except for the case of energetically most stable bi-Mn doping, which shows a transition from ferromagnetic to anti-ferromagnetic coupling with decreasing aspect ratio of the host system. The effect of the shape change, however, has a significant effect on the overall band gap variations of both the pristine as well as all the bi-doped systems, irrespective of the nature of the dopant atoms and provides a means for easy tunability of their optoelectronic properties.
International Nuclear Information System (INIS)
Using density functional theory (DFT) based electronic structure calculations, the effects of morphology of semiconducting nanostructures on the magnetic interaction between two magnetic dopant atoms as well as a possibility of tuning band gaps have been studied in the case of the bi-doped (ZnO)24 nanostructures with the impurity dopant atoms of the 3d late transition metals—Mn, Fe, Co, Ni, and Cu. To explore the morphology effect, three different structures of the host (ZnO)24 nano-system, having different degrees of spatial confinement, have been considered: a two dimensional nanosheet, a one dimensional nanotube, and a finite cage-shaped nanocluster. The present study employs hybrid density functional theory to accurately describe the electronic structure of all the systems. It is shown here that the magnetic coupling between the two dopant atoms remains mostly anti-ferromagnetic in the course of changing the morphology from the sheet geometry to the cage-shaped geometry of the host systems, except for the case of energetically most stable bi-Mn doping, which shows a transition from ferromagnetic to anti-ferromagnetic coupling with decreasing aspect ratio of the host system. The effect of the shape change, however, has a significant effect on the overall band gap variations of both the pristine as well as all the bi-doped systems, irrespective of the nature of the dopant atoms and provides a means for easy tunability of their optoelectronic properties
Analysis of photonic band-gap (PBG) structures using the FDTD method
DEFF Research Database (Denmark)
Tong, M.S.; Cheng, M.; Lu, Y.L.;
2004-01-01
In this paper, a number of photonic band-gap (PBG) structures, which are formed by periodic circuit elements printed oil transmission-line circuits, are studied by using a well-known numerical method, the finite-difference time-domain (FDTD) method. The results validate the band-stop filter...
Calculation of surface acoustic waves in a multilayered piezoelectric structure
Institute of Scientific and Technical Information of China (English)
Zhang Zuwei; Wen Zhiyu; Hu Jing
2013-01-01
The propagation properties of the surface acoustic waves (SAWs) in a ZnO-SiO2-Si multilayered piezoelectric structure are calculated by using the recursive asymptotic method.The phase velocities and the electromechanical coupling coefficients for the Rayleigh wave and the Love wave in the different ZnO-SiO2-Si structures are calculated and analyzed.The Love mode wave is found to be predominantly generated since the c-axis of the ZnO film is generally perpendicular to the substrate.In order to prove the calculated results,a Love mode SAW device based on the ZnO-SiO2-Si multilayered structure is fabricated by micromachining,and its frequency responses are detected.The experimental results are found to be mainly consistent with the calculated ones,except for the slightly larger velocities induced by the residual stresses produced in the fabrication process of the films.The deviation of the experimental results from the calculated ones is reduced by thermal annealing.
Energy Technology Data Exchange (ETDEWEB)
Vollmer, A.; Ovsyannikov, R.; Gorgoi, M.; Krause, S.; Oehzelt, M. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Elektronenspeicherring BESSY II, 12489 Berlin (Germany); Lindblad, A.; Martensson, N.; Svensson, S. [Uppsala University, Department of Materials Chemistry and Department of Physics and Astronomy, Uppsala (Sweden); Karlsson, P.; Lundvuist, M. [VG Scienta AB, Uppsala (Sweden); Schmeiler, T.; Pflaum, J. [Lehrstuhl fuer Experimentelle Physik VI, Universitaet Wuerzburg und ZAE Bayern, 97074 Wuerzburg (Germany); Koch, N., E-mail: norbert.koch@physik.hu-berlin.de [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Elektronenspeicherring BESSY II, 12489 Berlin (Germany); Institut fuer Physik, Humboldt-Universitaet zu Berlin, 12489 Berlin (Germany)
2012-04-15
Highlights: Black-Right-Pointing-Pointer A novel type of photoemission detector is introduced: the Angle Resolved Time Of Flight electron energy analyzer (ARTOF). Black-Right-Pointing-Pointer It enables electronic band structure determination under measurement conditions that are ideal for radiation-sensitive samples. Black-Right-Pointing-Pointer The band structures of rubrene single crystal is confirmed. Black-Right-Pointing-Pointer The absence of HOMO-band dispersion for tetracene single crystals is revealed. - Abstract: We report on a novel type of photoemission detector, the Angle Resolved Time Of Flight electron energy analyzer (ARTOF 10k), which enables electronic band structure determination under measurement conditions that are ideal for radiation-sensitive samples. This is facilitated through the combination of very high electron transmission and wide accessible angular range in one geometry. These properties make the ARTOF 10k predestined to investigate specimens that strongly suffer from radiation damage during photoemission experiments under 'standard' conditions, such as organic single crystals, as extremely low fluxes can be used while not compromising spectra accumulation times and signal-to-noise ratio. Even though organic single crystals are of increasing fundamental and applied scientific interest, knowledge of their electronic properties is still largely based on theoretical calculations due to major experimental challenges in measuring photoemission. In this work we show that the band structures of rubrene and tetracene single crystals can be obtained with unprecedented quality using the ARTOF 10k detector. The dispersion of the highest occupied band in rubrene is confirmed in accordance with an earlier report and we disclose the absence of notable dispersion for the highest occupied energy level on the surface of tetracene single crystals.
Observation of banded spherulites and lamellar structures by atomic force microscopy
Institute of Scientific and Technical Information of China (English)
姜勇; 罗艳红; 范泽夫; 王霞瑜; 徐军; 郭宝华; 李林
2003-01-01
Lamellar structures of banded spherulites of poly(ε-caprolactone)/poly(vinyl chloride) (PCL/PVC) blends are observed using tapping mode atomic force microscopy (AFM). The surface of the PCL/PVC banded spherulites presents to be concentric periodic ups and downs. The period of the bands corresponds to the extinction rings under the polarized optical microscopy observation. The lamellae with edge-on orientation in the ridges and the flat-on lamellae in the valleys of the banded spherulites are observed clearly. The twisting between the edge-on and flat-on lamellae is also observed.
Inverse boundary element calculations based on structural modes
DEFF Research Database (Denmark)
Juhl, Peter Møller
2007-01-01
The inverse problem of calculating the flexural velocity of a radiating structure of a general shape from measurements in the field is often solved by combining a Boundary Element Method with the Singular Value Decomposition and a regularization technique. In their standard form these methods sol...
Calculation of structurally related properties of bulk and surface Si
International Nuclear Information System (INIS)
The self-consistent pseudopotential method is applied to study the bulk and surface structurally related properties of Si. Equilibrium configurations are determined by minimizing the total energy of the system; the calculated bulk properties and the surface relaxation of Si are found to be in good agreement with experiment. The surface energy and the surface reconstruction of Si are briefly discussed
Calculation of forces arising from impacting projectiles upon yielding structures
International Nuclear Information System (INIS)
Calculations concerning the impact of airplanes upon nuclear power plant buildings usually imply that the building [QUOTE]acts' as a rigid target. This assumption is justified for considerations concerning the structural integrity of the building being hit. However, for investigating induced vibrations of components within the structure, this approach might-in general-be too conservative. It is expected, that yielding of the structure during impact reduces the peak values of the loads and changes the temporal behaviour of the load function which is obtained for a rigid target. To calculate the changes of the load function which are due to deformations of the structure, Riera's method is extended for the case of a yielding target. The calculations are performed with a one-dimensional model for the projectile. The presented model calculations seem to verify that the motion of the target does not have much influence on the impact force for projectiles similar to the model projectile, provided the displacement of the yielding target is small in comparison with the path covered by the free-flying projectile during a time which is equivalent to the total time of impact. (Auth.)
Calculation of forces arising from impacting projectiles upon yielding structures
International Nuclear Information System (INIS)
Calculations concerning the impact of airplanes upon nuclear power plant buildings usually imply that the building 'acts' as a rigid target. This assumption is justified for considerations concerning the structural integrity of the building being hit. However, for investigating induced vibrations of components within the structure, this approach might -in general- be too conservative. It is expected, that yielding of the structure during impact reduces the peak values of the loads and changes the temporal behavior of the load function which is obtained for a rigid target. To calculate the changes of the load function which are due to deformations of the structure, Riera's method is extended for the case of a yielding target. In view of the applications of the calculations to the impact of airplanes upon buildings which are constructed to withstand loads of this kind without serious damage and without large deformations, it is possible to simplify the calculations to some extent. That is, the investigations need not take into account in detail the behavior of the target during impact. The calculations are performed with a one-dimensional model for the projectile. The direction of impact is perpendicular to the target surface; direction of impact and projectile axis coincide. The calculations were performed for several initial velocities of the projectiles simulating a fast flying military airplane. Variations of the peak values of the load functions as compared to corresponding values for a rigid target do not exceed about 10%. The overall temporal behavior of the load curves turns out to be not very sensitive to the yielding of the target, though, in some cases displacements in time of the peak positions within a single load curve do arise
Band structure and optical transitions in LaFeO3: theory and experiment.
Scafetta, Mark D; Cordi, Adam M; Rondinelli, James M; May, Steven J
2014-12-17
The optical absorption properties of LaFeO(3) (LFO) have been calculated using density functional theory and experimentally measured from several high quality epitaxial films using variable angle spectroscopic ellipsometry. We have analyzed the calculated absorption spectrum using different Tauc models and find the model based on a direct-forbidden transition gives the best agreement with the ab initio band gap energies and band dispersions. We have applied this model to the experimental data and determine the band gap of epitaxial LFO to be ∼2.34 eV, with a slight dependence on strain state. This approach has also been used to analyze the higher indirect transition at ∼3.4 eV. Temperature dependent ellipsometry measurements further confirm our theoretical analysis of the nature of the transitions. This works helps to provide a general approach for accurate determination of band gaps and transition energies in complex oxide materials. PMID:25406799
Chiral nucleon-nucleon forces in nuclear structure calculations
Directory of Open Access Journals (Sweden)
Coraggio L.
2016-01-01
Full Text Available Realistic nuclear potentials, derived within chiral perturbation theory, are a major breakthrough in modern nuclear structure theory, since they provide a direct link between nuclear physics and its underlying theory, namely the QCD. As a matter of fact, chiral potentials are tailored on the low-energy regime of nuclear structure physics, and chiral perturbation theory provides on the same footing two-nucleon forces as well as many-body ones. This feature fits well with modern advances in ab-initio methods and realistic shell-model. Here, we will review recent nuclear structure calculations, based on realistic chiral potentials, for both finite nuclei and infinite nuclear matter.
Chiral nucleon-nucleon forces in nuclear structure calculations
Coraggio, L; Holt, J W; Itaco, N; Machleidt, R; Marcucci, L E; Sammarruca, F
2016-01-01
Realistic nuclear potentials, derived within chiral perturbation theory, are a major breakthrough in modern nuclear structure theory, since they provide a direct link between nuclear physics and its underlying theory, namely the QCD. As a matter of fact, chiral potentials are tailored on the low-energy regime of nuclear structure physics, and chiral perturbation theory provides on the same footing two-nucleon forces as well as many-body ones. This feature fits well with modern advances in ab-initio methods and realistic shell-model. Here, we will review recent nuclear structure calculations, based on realistic chiral potentials, for both finite nuclei and infinite nuclear matter.
Energy Technology Data Exchange (ETDEWEB)
Kizaki, H., E-mail: hkizaki@aquarius.mp.es.osaka-u.ac.j [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 567-8531 (Japan); Toyoda, M.; Sato, K. [The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Katayama-Yoshida, H. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 567-8531 (Japan); The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)
2009-12-15
Electronic structure of TiO{sub 2} (rutile) based dilute magnetic semiconductors (DMS) are investigated within self-interaction-corrected local density approximation (SIC-LDA) from first-principles calculation. These results are compared with those calculated within standard LDA. It is found that the calculated band-gap energy in the host TiO{sub 2} is different within the LDA and the SIC-LDA. We find that high-spin state is predicted within the SIC-LDA with oxygen vacancy. The calculated density of states within SIC-LDA is in good agreement with photoemission results.
Wei, Xiaojun; Tanaka, Takeshi; Yomogida, Yohei; Sato, Naomichi; Saito, Riichiro; Kataura, Hiromichi
2016-10-01
Experimental band structure analyses of single-walled carbon nanotubes have not yet been reported, to the best of our knowledge, except for a limited number of reports using scanning tunnelling spectroscopy. Here we demonstrate the experimental determination of the excitonic band structures of single-chirality single-walled carbon nanotubes using their circular dichroism spectra. In this analysis, we use gel column chromatography combining overloading selective adsorption with stepwise elution to separate 12 different single-chirality enantiomers. Our samples show higher circular dichroism intensities than the highest values reported in previous works, indicating their high enantiomeric purity. Excitonic band structure analysis is performed by assigning all observed Eii and Eij optical transitions in the circular dichroism spectra. The results reproduce the asymmetric structures of the valence and conduction bands predicted by density functional theory. Finally, we demonstrate that an extended empirical formula can estimate Eij optical transition energies for any (n,m) species.
Energy Technology Data Exchange (ETDEWEB)
Zhou, Xiaoling; Chen, Changqing, E-mail: chencq@tsinghua.edu.cn
2013-12-15
The band structures of two locally resonant phononic crystals (LRPCs) with periodic multilayered cylindrical inclusions embedded in an elastic matrix are investigated by the finite-element method. The inclusions consist of electroactive polymer layer(s). Tunability of the band gaps of the phononic crystals by applying electric field upon the electroactive layer is demonstrated. A simple analytical expression is presented on the relationship between the stop band boundaries and the electric field. Good agreement between the analytical and numerical predictions is obtained. The effects of initial stress on the band structures are explored. It is found that tensile initial stress shifts up the band gaps while compressive initial stress shifts down or even closes them.
International Nuclear Information System (INIS)
The structures of superdeformed (SD) states in 34S are investigated using the antisymmetrized molecular dynamics and generator coordinate method (GCM). The GCM basis wave functions are calculated via energy variation with a constraint on the quadrupole deformation parameter β. By applying the GCM after parity and angular momentum projections, the coexistence of two positive- and one negative-parity SD bands are predicted, and low-lying states and other deformed bands are obtained. The SD bands have structures of 16O + 16O + two valence neutrons in molecular orbitals around the two 16O cores in a cluster picture. The configurations of the two valence neutrons are δ2 and π2 for the positive-parity SD bands and π1δ1 for the negative-parity SD band
Effects of NMR spectral resolution on protein structure calculation.
Directory of Open Access Journals (Sweden)
Suhas Tikole
Full Text Available Adequate digital resolution and signal sensitivity are two critical factors for protein structure determinations by solution NMR spectroscopy. The prime objective for obtaining high digital resolution is to resolve peak overlap, especially in NOESY spectra with thousands of signals where the signal analysis needs to be performed on a large scale. Achieving maximum digital resolution is usually limited by the practically available measurement time. We developed a method utilizing non-uniform sampling for balancing digital resolution and signal sensitivity, and performed a large-scale analysis of the effect of the digital resolution on the accuracy of the resulting protein structures. Structure calculations were performed as a function of digital resolution for about 400 proteins with molecular sizes ranging between 5 and 33 kDa. The structural accuracy was assessed by atomic coordinate RMSD values from the reference structures of the proteins. In addition, we monitored also the number of assigned NOESY cross peaks, the average signal sensitivity, and the chemical shift spectral overlap. We show that high resolution is equally important for proteins of every molecular size. The chemical shift spectral overlap depends strongly on the corresponding spectral digital resolution. Thus, knowing the extent of overlap can be a predictor of the resulting structural accuracy. Our results show that for every molecular size a minimal digital resolution, corresponding to the natural linewidth, needs to be achieved for obtaining the highest accuracy possible for the given protein size using state-of-the-art automated NOESY assignment and structure calculation methods.
Efficient VLSI Architecture For CSD Basedsub-Band Tree Structure Using 4-Tap Filter
Radhe Kant Mishra,; Dr. Subbaratnam Kumar
2014-01-01
A sub-band tree structure hardware design based on canonic signed digit (CSD) architecture is presented in this paper. We have proposed based on canonic signed digit (CSD) arithmetic for low complexity and efficient implementation of sub-band tree structure. The canonic signed digit (CSD) technique has been applied to reduce the number of full adders required by 2’s complement based deigns. This architecture is suitable for high speed on-line applications. With this architectu...
Directory of Open Access Journals (Sweden)
Odru P.
2006-11-01
Full Text Available Cet article présente une méthode de calcul des structures composites fibres-résine appliquée aux cas des tubes minces. Outre l'établissement des relations contraintes - déformations généralisées des tubes à partir des caractéristiques des matériaux de base et de leur orientation, on pose les relations permettant de calculer leur comportement et leur dimensionnement sous des charges axisymétriques combinées de traction, pression et flexion. Une méthode simplifiée applicable au cas des composites microfissurés est aussi présentée. On montre ensuite, à travers quelques exemples concrets d'applications, les propriétés intéressantes ou inhabituelles que le matériau permet de conférer aux structures. This article presents a method of calculation of composite structures applied to thin-walled tubes. Starting from the characteristics and orientation of the basic materials, the generalized stress-strain equations of the tubes are determined ; then the relationship allowing the calculation of their design and behavior under combined axisymmetrical loads of tension, pressure and bending are established. A simplified method applicable to microcracked composite materials is also described. Several complete examples of applications illustrate the interesting or unusual properties that this material can impart to structures
Dual-Band Terahertz Left-Handed Metamaterial with Fishnet Structure
Institute of Scientific and Technical Information of China (English)
DU Qiu-Jiao; LIU Jin-Song; WANG Ke-Jia; YI Xu-Nong; YANG Hong-Wu
2011-01-01
We present the design of a dual-band left-handed metamaterial with fishnet structure in the terahertz regime. Its left-handed properties are described by the retrieved effective electromagnetic parameters. We introduce an equivalent circuit which offers a theoretical explanation for the left-handed behavior of the dual-band fishnet metamaterial, and investigate its losses receiving higher figure of merit. The design is beneficial to the development of frequency agile and broadband THz materials and devices. The dual-band fishnet metamaterial can be extended to infrared and optical frequency ranges by regulating the structural parameters.
Hao Liu; Ziqiang Xu
2013-01-01
A modified electromagnetic-bandgap (M-EBG) structure and its application to planar monopole ultra-wideband (UWB) antenna are presented. The proposed M-EBG which comprises two strip patch and an edge-located via can perform dual notched bands. By properly designing and placing strip patch near the feedline, the proposed M-EBG not only possesses a simple structure and compact size but also exhibits good band rejection. Moreover, it is easy to tune the dual notched bands by altering the dimensio...
Tagami, Shingo
2016-01-01
Inclusion of time-odd components into the wave function is important for reliable description of rotational motion by the angular-momentum-projection method; the cranking procedure with infinitesimal rotational frequency is an efficient way to realize it. In the present work we investigate the effect of this infinitesimal cranking for triaxially deformed nucleus, where there are three independent cranking axes. It is found that the effects of cranking about three axes on the triaxial energy spectrum are quite different and inclusion of all of them considerably modify the resultant spectrum from the one obtained without cranking. Employing the Gogny D1S force as an effective interaction, we apply the method to the calculation of the multiple gamma vibrational bands in $^{164}$Er as a typical example, where the angular-momentum-projected configuration-mixing with respect to the triaxial shape degree of freedom is performed. With this method, both the $K=0$ and $K=4$ two-phonon gamma vibrational bands are obtain...
Realization of Band-Notch UWB Monopole Antenna Using AMC Structure
Directory of Open Access Journals (Sweden)
Pradeep Kumar
2013-06-01
Full Text Available This article presents the design, simulation and testing of an Ultra Wide Band (UWB planar monopole antenna with WLAN band-notch characteristic. The proposed antenna consists, the combination of planar monopole antenna with partial ground and a pair of AMC structures. The AMC structure used for the design is mushroom-like. Design equation of EBG parameters is also proposed for FR4 substrate using transmission line model. Using proposed equations, Mushroom-like EBG structure is integrated along the feed line of a monopole antenna for WLAN (5 GHz – 6 GHz band rejection. TheCurrent distribution and equivalent circuit model of antenna is used to explain band-notch characteristic of EBG resonator. The proposed antenna is fabricated on an FR4 substrate with a thickness of 1.6 mmand εr = 4.4. The measured VSWR characteristic is less than 2 for complete UWB band except for WLAN band i.e. 5 GHz – 6 GHz. The gain of the proposed structure is around 2 dBi – 6.7 dBi for complete UWBband except for WLAN band where it is reduced to -4 dBi. The measured radiation pattern of proposed antenna is omnidirectional along H plane and bidirectional in E plane. A nearly constant group delaywith variations < 2ns, except for the notched bandwidth makes proposed antenna suitable for UWB application.
Band structure engineering of anatase TiO{sub 2} by metal-assisted P-O coupling
Energy Technology Data Exchange (ETDEWEB)
Wang, Jiajun; Meng, Qiangqiang [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Huang, Jing [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); School of Materials and Chemical Engineering, Anhui Jianzhu University, Hefei, Anhui 230601 (China); Li, Qunxiang, E-mail: liqun@ustc.edu.cn; Yang, Jinlong [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)
2014-05-07
In this work, we demonstrate that the metal-assisted P-O coupling is an effective approach to improve the photoelectrochemical properties of TiO{sub 2}. The (Sc + P) and (In + P) codoping effects on electronic structures and photocatalytic activities of anatase TiO{sub 2} are examined by performing hybrid density functional theory calculations. It is found that the coupling of P dopant with the second-nearest neighboring O atom assisted by acceptor metals (Sc/In) leads to the fully occupied and delocalized intermediate bands within the band gap of anatase TiO{sub 2}, which is driven by the P-O antibonding states (π*). This metal-assisted P-O coupling can prevent the recombination of photogenerated electron-hole pairs and effectively reduce the band gap of TiO{sub 2}. Moreover, the band edge alignments in (Sc + P) and (In + P) codoped anatase TiO{sub 2} are desirable for water-splitting. The calculated optical absorption curves indicate that (Sc + P) and (In + P) codoping in anatase TiO{sub 2} can also effectively enhance the visible light absorption.
Boissoles, J.; Boulet, C.; Robert, D.; Green, S.
1987-01-01
Line coupling coefficients resulting from rotational excitation of CO perturbed by He are computed within the infinite order sudden approximation (IOSA) and within the energy corrected sudden approximation (ECSA). The influence of this line coupling on the 1-0 CO-He vibration-rotation band shape is then computed for the case of weakly overlapping lines in the 292-78 K temperature range. The IOS and ECS results differ only at 78 K by a weak amount at high frequencies. Comparison with an additive superposition of Lorentzian lines shows strong modifications in the troughs between the lines. These calculated modifications are in excellent quantitative agreement with recent experimental data for all the temperatures considered. The applicability of previous approaches to CO-He system, based on either the strong collision model or exponential energy gap law, is also discussed.
Boissoles, J.; Boulet, C.; Robert, D.; Green, S.
1987-09-01
Line coupling coefficients resulting from rotational excitation of CO perturbed by He are computed within the infinite order sudden approximation (IOSA) and within the energy corrected sudden approximation (ECSA). The influence of this line coupling on the 1-0 CO-He vibration-rotation band shape is then computed for the case of weakly overlapping lines in the 292-78 K temperature range. The IOS and ECS results differ only at 78 K by a weak amount at high frequencies. Comparison with an additive superposition of lorentzian lines shows strong modifications in the troughs between the lines. These calculated modifications are in excellent quantitative agreement with recent experimental data for all the temperatures considered. The applicability of previous approaches to CO-He system, based on either the strong collision model or exponential energy gap law, is also discussed.
Boissoles, J.; Boulet, C.; Robert, D.; Green, S.
1987-09-01
Line coupling coefficients resulting from rotational excitation of CO perturbed by He are computed within the infinite order sudden approximation (IOSA) and within the energy corrected sudden approximation (ECSA). The influence of this line coupling on the 1-0 CO-He vibration-rotation band shape is then computed for the case of weakly overlapping lines in the 292-78 K temperature range. The IOS and ECS results differ only at 78 K by a weak amount at high frequencies. Comparison with an additive superposition of Lorentzian lines shows strong modifications in the troughs between the lines. These calculated modifications are in excellent quantitative agreement with recent experimental data for all the temperatures considered. The applicability of previous approaches to CO-He system, based on either the strong collision model or exponential energy gap law, is also discussed.
Seo, Dong-Hwa; Urban, Alexander; Ceder, Gerbrand
2015-09-01
Transition-metal (TM) oxides play an increasingly important role in technology today, including applications such as catalysis, solar energy harvesting, and energy storage. In many of these applications, the details of their electronic structure near the Fermi level are critically important for their properties. We propose a first-principles-based computational methodology for the accurate prediction of oxygen charge transfer in TM oxides and lithium TM (Li-TM) oxides. To obtain accurate electronic structures, the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional is adopted, and the amount of exact Hartree-Fock exchange (mixing parameter) is adjusted to reproduce reference band gaps. We show that the HSE06 functional with optimal mixing parameter yields not only improved electronic densities of states, but also better energetics (Li-intercalation voltages) for LiCo O2 and LiNi O2 as compared to the generalized gradient approximation (GGA), Hubbard U corrected GGA (GGA +U ), and standard HSE06. We find that the optimal mixing parameters for TM oxides are system specific and correlate with the covalency (ionicity) of the TM species. The strong covalent (ionic) nature of TM-O bonding leads to lower (higher) optimal mixing parameters. We find that optimized HSE06 functionals predict stronger hybridization of the Co 3 d and O 2 p orbitals as compared to GGA, resulting in a greater contribution from oxygen states to charge compensation upon delithiation in LiCo O2 . We also find that the band gaps of Li-TM oxides increase linearly with the mixing parameter, enabling the straightforward determination of optimal mixing parameters based on GGA (α =0.0 ) and HSE06 (α =0.25 ) calculations. Our results also show that G0W0@GGA +U band gaps of TM oxides (M O ,M =Mn ,Co ,Ni ) and LiCo O2 agree well with experimental references, suggesting that G0W0 calculations can be used as a reference for the calibration of the mixing parameter in cases when no experimental band gap has been
First-Principles Calculations of Structural, Electronic and Optical Properties of CaTiO3 Crystal
Medeiros, Subênia; Silva, Jusciane; Albuquerque, Eudenilson; Freire, Valder
2013-03-01
The structural, electronic, vibrational, and optical properties of perovskite CaTiO3 in the cubic, orthorhombic, and tetragonal phase are calculated in the framework of density functional theory (DFT) with different exchange-correlation potentials by CASTEP package. The calculated band structure shows an indirect band gap of 1.88 eV at the Γ-R points in the Brillouin zone to the cubic structure, a direct band gap of 2.41 eV at the Γ - Γ points to the orthorhombic structure, and an indirect band gap of 2.31 eV at the M' Γ points to the tetragonal phase. I have concluded that the bonding between Ca and TiO2 is mainly ionic and that the TiO2 entities bond covalently. Unlike some perovskites the CaTiO3 does not exhibit a ferroelectric phase transition down to 4.2 K. It is still known that the CaTiO3 has a static dielectric constant that extrapolates to a value greater than 300 at zero temperature. Our calculated lattice parameters, elastic constants, optical properties, and vibrational frequencies are found to be in good agreement with the available theoretical and experimental values. The results for the effective mass in the electron and hole carriers are also presented in this work.
Cell and band structures in cold rolled polycrystalline copper
DEFF Research Database (Denmark)
Ananthan, V.S.; Leffers, Torben; Hansen, Niels
1991-01-01
The effect of plastic strain on the deformation microstructure has been investigated in polycrystalline copper rolled at room temperature to 5, 10, 20, and 30% reduction in thickness equivalent strain 0.06-0.42). Results from transmission electron microscopy (TEM) observations show that dense...... dislocation walls (DDWs) and cells develop during the initial stages of cold rolling. Grains having a high density of DDWs are described as high wall density (HWD) structures, and grains having a low density of DDWs are described as low wall density (LWD) structures. These structures are characterised by cell...... size, misorientation across the cell walls, and the crystallographic orientation of the grains in which they appear. The DDWs in the HWD structures have special characteristics, extending along several cells and having a misorientation across them greater than that across ordinary cell boundaries...
Band structure of 146Ce studied through γ-γ angular correlation measurements
Yamada, S.; Taniguchi, A.; Okano, K.; Aoki, K.
The β-decay of 146La was studied using the on-line isotope separator KUR-ISOL. Gamma-gamma angular correlation measurements were performed with a 4-Ge detectors system. Spin assignments of three levels were made: 3+ for the 1576.5 keV level, 4+ for the 1627.1 keV level and 5+ for the 1810.2 keV level. The mixing ratios (E2/M1) were deduced to be δ183.2= 0.25 +/- 0.08, δ638.9= 0.33 +/- 0.05, δ959.0= 1.19+0.16-0.14, δ1015.9= 5.4+3.1-1.5 and δ1318.1= 6.5+1.7-1.1. These were compared to the calculated values obtained in three cases involving different Majorana force parameter values. The band structure of 146Ce is discussed based on the results of calculation using the IBM-2 theory.
International Nuclear Information System (INIS)
We propose a multiscale spoof–insulator–spoof (SIS) waveguide by introducing periodic geometry modulation in the wavelength scale to a SIS waveguide made of a perfect electric conductor. The MSIS consists of multiple SIS subcells. The dispersion relationship of the fundamental guided mode of the spoof surface plasmon polaritons (SSPPs) is studied analytically within the small gap approximation. It is shown that the multiscale SIS possesses microwave band gap (MBG) due to the Bragg scattering. The ‘gap maps’ in the design parameter space are provided. We demonstrate that the geometry of the subcells can efficiently adjust the effective refraction index of the elementary SIS and therefore further control the width and the position of the MBG. The results are in good agreement with numerical calculations by the finite element method (FEM). For finite-sized MSIS of given geometry in the millimeter scale, FEM calculations show that the first-order symmetric SSPP mode has zero transmission in the MBG within frequency range from 4.29 to 5.1 GHz. A cavity mode is observed inside the gap at 4.58 GHz, which comes from a designer ‘point defect’ in the multiscale SIS waveguide. Furthermore, ultrathin MSIS waveguides are shown to have both symmetric and antisymmetric modes with their own MBGs, respectively. The deep-subwavelength confinement and the great degree of control of the propagation of SSPPs in such structures promise potential applications in miniaturized microwave device. (paper)
New crystal structure prediction of fully hydrogenated borophene by first principles calculations
Wang, Zhi-Qiang; Wang, Hui-Qiong; Feng, Yuan Ping; Zheng, Jin-Cheng
2016-01-01
We have studied the structure stability, band structures and mechanical properties of fully hydrogenated borophene (borophane) with different configurations by first principles calculations. Comparing with the Chair-like borophane (C-boropane) that has been reported in literature, we obtained four new conformers with much lower total-energy. The most stable one, Washboard-like borophane (W-borophane), has energy difference about 113.41 meV/atom lower than C-borophane. In W-borophane, B atoms are staggered by zigzag mode along the a direction, and staggered by up and down wrinkle mode along the b direction. Furthermore, we examined the dynamical stability of borophane conformers by calculating phonon dispersions. For the five conformers, no imaginary frequencies along the high-symmetry directions of the Brillouin zone were found, indicating that the five conformers are all dynamically stable. In addition, the band structures of the five conformers all show a Dirac cone along {\\Gamma}-Y or {\\Gamma}-X direction....
International Nuclear Information System (INIS)
We investigate the cohesive energy, heat of formation, elastic constant and electronic band structure of transition metal diborides TMB2 (TM = Hf, Ta, W, Re, Os and Ir, Pt) in the Pmmn space group using the ab initio pseudopotential total energy method. Our calculations indicate that there is a relationship between elastic constant and valence electron concentration (VEC): the bulk modulus and shear modulus achieve their maximum when the VEC is in the range of 6.8-7.2. In addition, trends in the elastic constant are well explained in terms of electronic band structure analysis, e.g., occupation of valence electrons in states near the Fermi level, which determines the cohesive energy and elastic properties. The maximum in bulk modulus and shear modulus is attributed to the nearly complete filling of TM d-B p bonding states without filling the antibonding states. On the basis of the observed relationship, we predict that alloying W and Re in the orthorhombic structure OsB2 might be harder than alloying the Ir element. Indeed, the further calculations confirmed this expectation
纤锌矿结构ZnO的准粒子能带结构%Quasiparticle band structures of wurtzite ZnO
Institute of Scientific and Technical Information of China (English)
郑勇平; 陈志高; 卢宇; 黄志高
2009-01-01
理论上对ZnO能带的计算一般采用局域密度近似(LDA),而该方法得到的带隙结果却被严重的低估了.在本文中,我们在密度泛函理论的LDA近似的框架下,通过第一性原理GW近似(GWA)对ZnO的能带进行了修正.在LDA和GWA计算中,将Zn3d电子作为价电子,LDA结果表明ZnO是一种直接带隙半导体,同时讨论了LDA和GWA计算得到的能带之间的差异.%The theoretical calculation of the band structure of ZnO mostly involves the local - density ap-proximation (LDA) method,which usually seriously underestimates the band gap. So,it is desirable to calculate the band structures in a more reliable method. In this paper,we present the band - structure calculations of wurtzite ZnO within the framework of density - functional theory (DFT) in LDA,emplo-ying the correction for band structures of wurtzite ZnO with GW approximation (GWA) using the ab initio pseudopotential method. The Zn 3d electrons are considered as valence states both in LDA and quasipar-ticle calculations. The LDA spectrum shows that ZnO is a direct band -gap semiconductor. The differ-ences between the band structures obtained by the GWA and IDA are discussed.
Physical properties and electronic band structure of noncentrosymmetric Th7Co3 superconductor
Sahakyan, M.; Tran, V. H.
2016-05-01
The physical properties of the noncentrosymmetric superconductor Th7Co3 have been investigated by means of ac-magnetic susceptibility, magnetization, specific heat, electrical resistivity, magnetoresistance and Hall effect measurements. From these data it is established that Th7Co3 is a dirty type-II superconductor with {{T}\\text{c}}=1.8+/- 0.02 K, Hc2\\text{orb}text{kOe}c2p and moderate electron-phonon coupling {λ\\text{el-\\text{ph}}}=0.56 . Some evidences for anisotropic superconducting gap are found, including e.g. reduced specific heat jump (Δ {{C}p}/γ {{T}\\text{c}}=1.01 ) at T c, diminished superconducting energy gap ({{Δ }0}/{{k}\\text{B}}{{T}\\text{c}}=2.17 ) as compared to the BCS values, power law field dependence of the Sommerfeld coefficient at 0.4 K ({{C}p}/T\\propto {{H}0.6} ), and a concave curvature of the {{H}c2}≤ft({{T}\\text{c}}\\right) line. The magnitudes of the thermodynamic critical field and the energy gap are consistent with mean-squared anisotropy parameter ˜ 0.23 . The electronic specific heat in the superconducting state is reasonably fitted to an oblate spheroidal gap model. Calculations of scalar relativistic and fully relativistic electronic band structures reveal considerable differences in the degenerate structure, resulting from asymmetric spin-orbit coupling (ASOC). A large splitting energy of spin-up spin-down bands at the Fermi level E F, Δ {{E}\\text{ASOC}}˜ 100 meV is observed and a sizeable ratio Δ {{E}\\text{ASOC}}/{{k}\\text{B}}{{T}\\text{c}}˜ 640 could classify the studied compound into the class of noncentrosymmetric superconductors with strong ASOC. The noncentrosymmetry of the crystal structure and the atomic relativistic effects are both responsible for an importance of ASOC in Th7Co3. The calculated results for the density of states show a Van Hove singularity just below E F and dominant role of the 6d electrons of Th to the superconductivity.
Energy Technology Data Exchange (ETDEWEB)
Shank, Joshua C.; Tellekamp, M. Brooks; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
2015-01-21
The theoretically suggested band structure of the novel p-type semiconductor lithium niobite (LiNbO{sub 2}), the direct coupling of photons to ion motion, and optically induced band structure modifications are investigated by temperature dependent photoluminescence. LiNbO{sub 2} has previously been used as a memristor material but is shown here to be useful as a sensor owing to the electrical, optical, and chemical ease of lithium removal and insertion. Despite the high concentration of vacancies present in lithium niobite due to the intentional removal of lithium atoms, strong photoluminescence spectra are observed even at room temperature that experimentally confirm the suggested band structure implying transitions from a flat conduction band to a degenerate valence band. Removal of small amounts of lithium significantly modifies the photoluminescence spectra including additional larger than stoichiometric-band gap features. Sufficient removal of lithium results in the elimination of the photoluminescence response supporting the predicted transition from a direct to indirect band gap semiconductor. In addition, non-thermal coupling between the incident laser and lithium ions is observed and results in modulation of the electrical impedance.
NUMERICAL CALCULATIONS IN GEOMECHANICS APPLICABLE TO LINEAR STRUCTURES
Vlasov Aleksandr Nikolaevich; Volkov-Bogorodskiy Dmitriy Borisovich; Znamenskiy Vladimir Valerianovich; Mnushkin Mikhail Grigorevich
2012-01-01
The article covers the problem of applicability of finite-element and engineering methods to the development of a model of interaction between pipeline structures and the environment in the complex conditions with a view to the simulation and projection of exogenous geological processes, trustworthy assessment of their impacts on the pipeline, and the testing of varied calculation methodologies. Pipelining in the areas that have a severe continental climate and permafrost soils is accompanied...
Polar semiconductor heterojunction structure energy band diagram considerations
Lin, Shuxun; Wen, Cheng P.; Wang, Maojun; Hao, Yilong
2016-03-01
The unique nature of built-in electric field induced positive/negative charge pairs of polar semiconductor heterojunction structure has led to a more realistic device model for hexagonal III-nitride HEMT. In this modeling approach, the distribution of charge carriers is dictated by the electrostatic potential profile instead of Femi statistics. The proposed device model is found suitable to explain peculiar properties of GaN HEMT structures, including: (1) Discrepancy in measured conventional linear transmission line model (LTLM) sheet resistance and contactless sheet resistance of GaN HEMT with thin barrier layer. (2) Below bandgap radiation from forward biased Nickel Schottky barrier diode on GaN HEMT structure. (3) GaN HEMT barrier layer doping has negligible effect on transistor channel sheet charge density.
Precise fabrication of X-band accelerating structure
International Nuclear Information System (INIS)
An accelerating structure with a/λ=0.16 is being fabricated to study a precise fabrication method. A frequency control of each cell better than 10-4 level is required to realize a detuned structure. The present machining level is nearly 1 MHz/11.4 GHz in relative frequency error, which just satisfies the above requirement. To keep this machining precision, the diffusion bonding technique is found preferable to join the cells. Various diffusion conditions were tried. The frequency change can be less than 1 MHz/11.4 GHz and it can be controlled well better than that. (author)
Yan, Zhi-zhong; Wei, Chun-qiu; Zheng, Hui; Zhang, Chuanzeng
2016-05-01
In this paper, a meshless radial basis function (RBF) collocation method is developed to calculate the phononic band structures taking account of different interface models. The present method is validated by using the analytical results in the case of perfect interfaces. The stability is fully discussed based on the types of RBFs, the shape parameters and the node numbers. And the advantages of the proposed RBF method compared to the finite element method (FEM) are also illustrated. In addition, the influences of the spring-interface model and the three-phase model on the wave band gaps are investigated by comparing with the perfect interfaces. For different interface models, the effects of various interface conditions, length ratios and density ratios on the band gap width are analyzed. The comparison results of the two models show that the weakly bonded interface has a significant effect on the properties of phononic crystals. Besides, the band structures of the spring-interface model have certain similarities and differences with those of the three-phase model.
Institute of Scientific and Technical Information of China (English)
刘其军; 刘正堂; 冯丽萍
2011-01-01
Structural, elastic and electronic properties of tetragonal Hf02 at applied hydrostatic pressure up to 50 GPa have been investigated using the plane-wave ultrasoft pseudopotential technique based on the first-principles density- functional theory （DFT）. The calculated ground-state properties are in good agreement with previous theoretical and experimental data. Six independent elastic constants of tetragonal Hf02 have been calculated at zero pressure and high pressure. From the obtained elastic constants, the bulk, shear and Young＇s modulus, Poisson＇s coefficients, acoustic velocity and Debye temperature have been calculated at the applied pressure. Band structure shows that tetragonal Hf02 is an indirect band gap. The variation of the gap versus pressure is well fitted to a quadratic function.
Reducing support loss in micromechanical ring resonators using phononic band-gap structures
Energy Technology Data Exchange (ETDEWEB)
Hsu, Feng-Chia; Huang, Tsun-Che; Wang, Chin-Hung; Chang, Pin [Industrial Technology Research Institute-South, Tainan 709, Taiwan (China); Hsu, Jin-Chen, E-mail: fengchiahsu@itri.org.t, E-mail: hsujc@yuntech.edu.t [Department of Mechanical Engineering, National Yunlin University of Science and Technology, Douliou, Yunlin 64002, Taiwan (China)
2011-09-21
In micromechanical resonators, energy loss via supports into the substrates may lead to a low quality factor. To eliminate the support loss, in this paper a phononic band-gap structure is employed. We demonstrate a design of phononic-crystal (PC) strips used to support extensional wine-glass mode ring resonators to increase the quality factor. The PC strips are introduced to stop elastic-wave propagation by the band-gap and deaf-band effects. Analyses of resonant characteristics of the ring resonators and the dispersion relations, eigenmodes, and transmission properties of the PC strips are presented. With the proposed resonator architecture, the finite-element simulations show that the leaky power is effectively reduced and the stored energy inside the resonators is enhanced simultaneously as the operating frequencies of the resonators are within the band gap or deaf bands. Realization of a high quality factor micromechanical ring resonator with minimized support loss is expected.
Electronic structure of MoSe2, MoS2, and WSe2. II. The nature of the optical band gaps
Coehoorn, R.; Haas, C.; de Groot, R. A.
1987-01-01
From band-structure calculations it is shown that MoSe2, MoS2, and WSe2 are indirect-gap semiconductors. The top of the valence band is at the Γ point and the bottom of the conduction band is along the line T of the hexagonal Brillouin zone, halfway between the points Γ and K. The A and B excitons correspond to the smallest direct gap at the K point. This assignment of the exciton peaks is shown to be consistent with the polarization dependence of their intensities, their effective masses, an...
Electronic band structure of LaCoO3/Y/Mn compounds
Rahnamaye Aliabad, H. A.; Hesam, V.; Ahmad, Iftikhar; Khan, Imad
2013-02-01
Spin polarization effects on electronic properties of pure LaCoO3 and doped compounds (La0.5Y0.5CoO3, LaCo0.5Mn0.5O3) in the rhombohedral phase have been studied. We have employed the full potential linearized augmented plane wave (FP-LAPW) method with the generalized gradient approximation (GGA+U) under density functional theory (DFT). The calculated band structures along with total as well as partial densities of states reveal that Y and Mn impurities have a significant effect on the structural and electronic properties of LaCoO3. It is found that Mn alters insulating behavior of this compound to the half metallic for spin up state. Obtained results show that the magnetic moment for the Co-3d state is near 3.12μB in LaCoO3 compound which increases and decreases with addition of Y and Mn dopants respectively.
Synthesis, physical properties and band structure of non-magnetic Y3AlC
Ghule, S. S.; Garde, C. S.; Ramakrishnan, S.; Singh, S.; Rajarajan, A. K.; Laad, Meena
2016-10-01
Y3AlC has been synthesized by arc melting and subsequent annealing. Rietveld analysis of the powder x-ray diffraction (XRD) data confirms cubic Pm-3m structure. Electrical resistivity (ρ) of Y3AlC exhibits metallic behaviour. No sign of superconductivity is observed down to the lowest measurement temperatures of 4.2 K in ρ, and 2 K in magnetic susceptibility (χ) and specific heat (Cp) measurements. The value of the electronic specific heat coefficient γ is 1.36 mJ/K2 mol from which the density of states (DOS) at the Fermi energy (EF) is obtained as 0.57 states/eV.unit cell. The value of Debye temperature θD is estimated to be 315 K. Electronic band structure calculations of Y3AlC reveal a pseudo-gap in the DOS at EF leading to a small value of 0.5 states/eV unit cell which matches quite well with that obtained from γ. Non-zero value of the DOS indicates metallic behaviour as confirmed by our ρ data. Covalent and ionic bonding seem to co-exist with metallic bonding in Y3AlC as indicated by van Arkel- Ketelaar triangle for Zintl-like systems.
Filling-Enforced Gaplessness in Band Structures of the 230 Space Groups.
Watanabe, Haruki; Po, Hoi Chun; Zaletel, Michael P; Vishwanath, Ashvin
2016-08-26
Nonsymmorphic symmetries like screws and glides produce electron band touchings, obstructing the formation of a band insulator and leading, instead, to metals or nodal semimetals even when the number of electrons in the unit cell is an even integer. Here, we calculate the electron fillings compatible with being a band insulator for all 230 space groups, for noninteracting electrons with time-reversal symmetry. Our bounds are tight-that is, we can rigorously eliminate band insulators at any forbidden filling and produce explicit models for all allowed fillings-and stronger than those recently established for interacting systems. These results provide simple criteria that should help guide the search for topological semimetals and, also, have implications for both the nature and stability of the resulting nodal Fermi surfaces. PMID:27610868
Atomically Thin Ordered Alloys of Transition Metal Dichalcogenides: Stability and Band Structures
DEFF Research Database (Denmark)
Pandey, Mohnish; Jacobsen, Karsten Wedel; Thygesen, Kristian Sommer
2016-01-01
to be close to zero for several alloys and below 20 meV/atom for all the alloys. We explore to what extent the electronic properties like the band gap and band edge positions of the alloy can be evaluated by taking the weighted average of the corresponding properties of the pristine systems. In general......, this approach works well with the only exception being Cr containing compounds. Because the calculated properties of the alloys are very similar to the weighted averages, we expect that the trends observed for the ordered alloys will also hold for more realistic disordered alloys......We explore the possibility of modulating the electronic band edges of the transition metal dichalcogenides (TMD) via alloying of different semiconductors within the same group (intra-group alloying). The stability of the ordered alloys is assessed from the calculated mixing enthalpy which is found...
Electronic structure and band alignment at an epitaxial spinel/perovskite heterojunction.
Qiao, Liang; Li, Wei; Xiao, Haiyan; Meyer, Harry M; Liang, Xuelei; Nguyen, N V; Weber, William J; Biegalski, Michael D
2014-08-27
The electronic properties of solid-solid interfaces play critical roles in a variety of technological applications. Recent advances of film epitaxy and characterization techniques have demonstrated a wealth of exotic phenomena at interfaces of oxide materials, which are critically dependent on the alignment of their energy bands across the interface. Here we report a combined photoemission and electrical investigation of the electronic structures across a prototypical spinel/perovskite heterojunction. Energy-level band alignment at an epitaxial Co3O4/SrTiO3(001) heterointerface indicates a chemically abrupt, type I heterojunction without detectable band bending at both the film and substrate. The unexpected band alignment for this typical p-type semiconductor on SrTiO3 is attributed to its intrinsic d-d interband excitation, which significantly narrows the fundamental band gap between the top of the valence band and the bottom of the conduction band. The formation of the type I heterojunction with a flat-band state results in a simultaneous confinement of both electrons and holes inside the Co3O4 layer, thus rendering the epitaxial Co3O4/SrTiO3(001) heterostructure to be a very promising material for high-efficiency luminescence and optoelectronic device applications. PMID:25075939
Structure sensitive bands in the vibrational spectra of metal complexes of tetraphenylporphine
Oshio, Hiroki; Ama, Tomoharu; Watanabe, Takeshi; Kincaid, James; Nakamoto, Kazuo
The i.r. and RR spectra of twenty Fe(TPP)LL' type complexes have been measured to locate structure-sensitive bands. In i.r. spectra, band I (1350-1330 cm -1) and band III (469-432 cm -1) are spin-state sensitive whereas band II (806-790 cm -1) is oxidation-state sensitive and slightly spin-state sensitive in the Fe(II) state. To examine the nature of these bands, the i.r. spectra of Co(TPP), (Fe(TPP)) 2O and their d8 and d20 analogs have been measured, and empirical assignments proposed. In RR spectra, band C (1545-1498 cm -1, ap) and band D (1565-1540 cm -1, p) are spin-state sensitive whereas band E (391-376 cm -1, p) is sensitive to both spin and oxidation states. These results on RR spectra are in good agreement with those of previous workers.
Relationships between magnetic foot points and G-band bright structures
Ishikawa, R; Kitakoshi, Y; Katsukawa, Y; Bonet, J A; Domínguez, S Vargas; van der Voort, L H M Rouppe; Sakamoto, Y; Ebisuzaki, T
2008-01-01
Magnetic elements are thought to be described by flux tube models, and are well reproduced by MHD simulations. However, these simulations are only partially constrained by observations. We observationally investigate the relationship between G-band bright points and magnetic structures to clarify conditions, which make magnetic structures bright in G-band. The G-band filtergrams together with magnetograms and dopplergrams were taken for a plage region covered by abnormal granules as well as ubiquitous G-band bright points, using the Swedish 1-m Solar Telescope (SST) under very good seeing conditions. High magnetic flux density regions are not necessarily associated with G-band bright points. We refer to the observed extended areas with high magnetic flux density as magnetic islands to separate them from magnetic elements. We discover that G-band bright points tend to be located near the boundary of such magnetic islands. The concentration of G-band bright points decreases with inward distance from the boundar...
A short remark on the band structure of free-edge platonic crystals
Smith, Michael J. A.; Meylan, Michael H.; McPhedran, Ross C.; Poulton, Chris G.
2014-10-01
A corrected version of the multipole solution for a thin plate perforated in a doubly periodic fashion is presented. It is assumed that free-edge boundary conditions are imposed at the edge of each cylindrical inclusion. The solution procedure given here exploits a well-known property of Bessel functions to obtain the solution directly, in contrast to the existing incorrect derivation. A series of band diagrams and an updated table of values are given for the resulting system (correcting known publications on the topic), which shows a spectral band at low frequency for the free-edge problem. This is in contrast to clamped-edge boundary conditions for the same biharmonic plate problem, which features a low-frequency band gap. The numerical solution procedure outlined here is also simplified relative to earlier publications, and exploits the spectral properties of complex-valued matrices to determine the band structure of the structured plate.
Liu, Hao; Xu, Ziqiang
2013-01-01
A modified electromagnetic-bandgap (M-EBG) structure and its application to planar monopole ultra-wideband (UWB) antenna are presented. The proposed M-EBG which comprises two strip patch and an edge-located via can perform dual notched bands. By properly designing and placing strip patch near the feedline, the proposed M-EBG not only possesses a simple structure and compact size but also exhibits good band rejection. Moreover, it is easy to tune the dual notched bands by altering the dimensions of the M-EBG. A demonstration antenna with dual band-notched characteristics is designed and fabricated to validate the proposed method. The results show that the proposed antenna can satisfy the requirements of VSWR WiMAX) and the wireless local area network (WLAN) at 3.5 GHz and 5.5 GHz, respectively. PMID:24170984
Liu, Hao; Xu, Ziqiang
2013-01-01
A modified electromagnetic-bandgap (M-EBG) structure and its application to planar monopole ultra-wideband (UWB) antenna are presented. The proposed M-EBG which comprises two strip patch and an edge-located via can perform dual notched bands. By properly designing and placing strip patch near the feedline, the proposed M-EBG not only possesses a simple structure and compact size but also exhibits good band rejection. Moreover, it is easy to tune the dual notched bands by altering the dimensions of the M-EBG. A demonstration antenna with dual band-notched characteristics is designed and fabricated to validate the proposed method. The results show that the proposed antenna can satisfy the requirements of VSWR WiMAX) and the wireless local area network (WLAN) at 3.5 GHz and 5.5 GHz, respectively.
Zhang, Xiaochuan; Wang, Yong; Yang, Jia; Qiao, Zhixia; Ren, Chunhua; Chen, Cheng
2016-10-01
The ferrite/pearlite banded structure causes the anisotropic behavior of steel. In this paper, digital image correlation (DIC) was used to analyze the micro deformation of this microstructure under uniaxial tension. The reliability of DIC for this application was verified by a zero-deformation experiment. The results show that the performance of DIC can satisfy the requirements of the tensile deformation measurement. Then, two uniaxial tensile tests in different directions (longitudinal direction and transverse direction) were carried out and DIC was used to measure the micro deformation of the ferrite/pearlite banded structure. The measured results show that the ferrite bands undergo the main deformation in the transverse tension, which results in the relatively weaker tensile properties in the transverse direction than in the longitudinal direction. This work is useful to guide the modification of the bands morphology and extend the application scope of DIC.
Zhu, Yong-zheng; Cao, Yan-ling; Li, Zhi-hui; Ding, Juan; Liu, Jun-song; Chi, Yuan-bin
2007-02-01
With the help of self-assembly, thermal sintering, selective etching techniques and sol-gel process, the non-close packed (ncp) face-centered cubic (fcc) photonic crystals of titanium dioxide (TiO2) hollow spheres connected by TiO2 cylindrical tubes have been fabricated using silica template. The photonic bandgap calculations indicate that the ncp structure of TiO2 hollow spheres was easier to open the pseudogaps than close packed system at the lowest energy.
Simultaneous calculation of aircraft design loads and structural member sizes
Giles, G. L.; Mccullers, L. A.
1975-01-01
A design process which accounts for the interaction between aerodynamic loads and changes in member sizes during sizing of aircraft structures is described. A simultaneous iteration procedure is used wherein both design loads and member sizes are updated during each cycle yielding converged, compatible loads and member sizes. A description is also given of a system of programs which incorporates this process using lifting surface theory to calculate aerodynamic pressure distributions, using a finite-element method for structural analysis, and using a fully stressed design technique to size structural members. This system is tailored to perform the entire process with computational efficiency in a single computer run so that it can be used effectively during preliminary design. Selected results, considering maneuver, taxi, and fatigue design conditions, are presented to illustrate convergence characteristics of this iterative procedure.
Analysis of photonic band-gap structures in stratified medium
DEFF Research Database (Denmark)
Tong, Ming-Sze; Yinchao, Chen; Lu, Yilong;
2005-01-01
in solving the Maxwell's equations numerically. It expands the temporal derivatives using the finite differences, while it adopts the Fourier transform (FT) properties to expand the spatial derivatives in Maxwell's equations. In addition, the method makes use of the chain-rule property in calculus together...... in electromagnetic and microwave applications once the Maxwell's equations are appropriately modeled. Originality/value - The method validates its values and properties through extensive studies on regular and defective 1D PBG structures in stratified medium, and it can be further extended to solving more...
Band structure properties of (BGa)P semiconductors for lattice matched integration on (001) silicon
Energy Technology Data Exchange (ETDEWEB)
Hossain, Nadir; Sweeney, Stephen [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Hosea, Jeff [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, UK and Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Liebich, Sven; Zimprich, Martin; Volz, Kerstin; Stolz, Wolfgang [Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg (Germany); Kunert, Bernerdette [NAsP III/V GmbH, Am Knechtacker 19, 35041 Marburg (Germany)
2013-12-04
We report the band structure properties of (BGa)P layers grown on silicon substrate using metal-organic vapour-phase epitaxy. Using surface photo-voltage spectroscopy we find that both the direct and indirect band gaps of (BGa)P alloys (strained and unstrained) decrease with Boron content. Our experimental results suggest that the band gap of (BGa)P layers up to 6% Boron is large and suitable to be used as cladding and contact layers in GaP-based quantum well heterostructures on silicon substrates.
Study of periodic band gap structure of the magnetized plasma photonic crystals
Institute of Scientific and Technical Information of China (English)
ZHANG Hai-feng; MA Li; LIU Shao-bin
2009-01-01
The characteristics of the periodic band gaps of the one dimension magnetized plasma photonic crystals are studied with the piecewise linear current density recursive convolution (PLCDRC) finite-differential time-domain (FDTD) method. In fre-quency-domain, the transmission coefficients of electromagnetic Gaussian pulses are computed, and the effects of the periodic structure constant, plasma layer thickness and parameters of plasma on the properties of periodic band gaps of magnetized photonic crystals are analyzed. The results show that the periodic band gaps depend strongly on the plasma parameters.
Chegel, Raad
2016-06-01
By using the third nearest neighbor modified tight binding (3NN-TB) method, the electronic structure and band gap of BNNRs under transverse electric fields are explored. The band gap of the BNNRs has a decreasing with increasing the intensity of the applied electric field, independent on the ribbon edge types. Furthermore, an analytic model for the dependence of the band gap in armchair and zigzag BNNRs on the electric field is proposed. The reduction of E g is similar for some N a armchair and N z zigzag BNNRs independent of their edges.
The calculation of satellite line structures in highly stripped plasmas
Energy Technology Data Exchange (ETDEWEB)
Abdallah, J. Jr.; Kilcrease, D.P. [Los Alamos National Lab., NM (United States); Faenov, A.Ya.; Pikuz, T.A. [Multicharged Ion Spectra Data Center, Moscow (Russian Federation)
1998-11-01
This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). Recently developed high-resolution x-ray spectrographs have made it possible to measure satellite structures from various plasma sources with great detail. These lines are weak optically thin lines caused by the decay of dielectronic states and generally accompany the resonance lines of H-like and He-like ions. The Los Alamos atomic physics and kinetics codes provide a unique capability for calculating the position and intensities of such lines. These programs have been used to interpret such highly resolved spectral measurements from pulsed power devices and laser produced plasmas. Some of these experiments were performed at the LANL Bright Source and Trident laser facilities. The satellite structures are compared with calculations to diagnose temperatures and densities. The effect of non-thermal electron distributions of electrons on calculated spectra was also considered. Collaborations with Russian scientists have added tremendous value to this research die to their vast experience in x-ray spectroscopy.
The calculation of satellite line structures in highly stripped plasmas
International Nuclear Information System (INIS)
This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). Recently developed high-resolution x-ray spectrographs have made it possible to measure satellite structures from various plasma sources with great detail. These lines are weak optically thin lines caused by the decay of dielectronic states and generally accompany the resonance lines of H-like and He-like ions. The Los Alamos atomic physics and kinetics codes provide a unique capability for calculating the position and intensities of such lines. These programs have been used to interpret such highly resolved spectral measurements from pulsed power devices and laser produced plasmas. Some of these experiments were performed at the LANL Bright Source and Trident laser facilities. The satellite structures are compared with calculations to diagnose temperatures and densities. The effect of non-thermal electron distributions of electrons on calculated spectra was also considered. Collaborations with Russian scientists have added tremendous value to this research die to their vast experience in x-ray spectroscopy
Promoting Photochemical Water Oxidation with Metallic Band Structures.
Liu, Hongfei; Moré, René; Grundmann, Henrik; Cui, Chunhua; Erni, Rolf; Patzke, Greta R
2016-02-10
The development of economic water oxidation catalysts is a key step toward large-scale water splitting. However, their current exploration remains empirical to a large extent. Elucidating the correlations between electronic properties and catalytic activity is crucial for deriving general and straightforward catalyst design principles. Herein, strongly correlated electronic systems with abundant and easily tunable electronic properties, namely La(1-x)Sr(x)BO3 perovskites and La(2-x)Sr(x)BO4 layered perovskites (B = Fe, Co, Ni, or Mn), were employed as model systems to identify favorable electronic structures for water oxidation. We established a direct correlation between the enhancement of catalytic activity and the insulator to metal transition through tuning the electronic properties of the target perovskite families via the La(3+)/Sr(2+) ratio. Their improved photochemical water oxidation performance was clearly linked to the increasingly metallic character. These electronic structure-activity relations provide a promising guideline for constructing efficient water oxidation catalysts. PMID:26771537
Berne, A.D.; Delrieu, G.; Andrieu, H.
2005-01-01
The present study aims at a preliminary approach of multiradar compositing applied to the estimation of the vertical structure of precipitation¿an important issue for radar rainfall measurement and prediction. During the HYDROMET Integrated Radar Experiment (HIRE¿98), the vertical profile of reflectivity was measured, on the one hand, with an X-band vertically pointing radar system, and, on the other hand, with an X-band RHI scanning protocol radar. The analysis of the raw data highlights the...
Zou, Peng
An important area of application of high-power radio frequency (RF) and microwave sources is particle acceleration. A major challenge for the current worldwide research and development effort in linear accelerator is the search for a compact and affordable very-high-energy accelerator technology for the next generation supercolliders. It has been recognized for sometime that dielectric loaded accelerator structures are attractive candidates for the next generation very-high-energy linear accelerators, because they possess several distinct advantages over conventional metallic iris- loaded accelerator structures. However, some fundamental issues, such as RF breakdown in the dielectric, Joule heating, and vacuum properties of dielectric materials, are still the subjects of intense investigation, requiring the validation by experiments conducted at high power levels. An X-band traveling-wave accelerator based on dielectric-lined waveguide has been designed and constructed. Numerical calculation, bench measurements, and 3-D electromagnetic field simulation of this dielectric loaded accelerator are presented. One critical technical problem in constructing such dielectric loaded accelerator is efficient coupling of RF power into the dielectric-lined circular waveguide. A coupling scheme has been arrived at by empirical methods. Field distribution in this coupling configuration has been studied by numerical simulation. In the conventional iris-loaded accelerator structures, the peak surface electric field E s is in general found to be at least a factor of 2 higher than the axial acceleration field Ea. Because the peak surface electric field causes electric breakdown of the structure, it represents a direct limitation on the maximum acceleration gradient that can be obtained. A novel hybrid dielectric-iris-loaded periodic accelerator structure is proposed to utilize the advantages of both dielectric-lined waveguides and conventional iris-loaded structures. Numerical
Inertial amplification of continuous structures: Large band gaps from small masses
DEFF Research Database (Denmark)
Frandsen, Niels Morten Marslev; Bilal, Osama R.; Jensen, Jakob Søndergaard;
2016-01-01
We investigate wave motion in a continuous elastic rod with a periodically attached inertial amplification mechanism. The mechanism has properties similar to an “inerter” typically used in vehicle suspensions, however here it is constructed and utilized in a manner that alters the intrinsic...... properties of a continuous structure. The elastodynamic band structure of the hybridrod-mechanism structure yields band gaps that are exceedingly wide and deep when compared to what can be obtained using standard local resonators, while still being low in frequency. With this concept, a large band gap may...... be realized with as much as twenty times less added mass compared to what is needed in a standard local resonator configuration. The emerging inertially enhanced continuous structure also exhibits unique qualitative features in its dispersion curves. These include the existence of a characteristic double...
Polarization-dependent diffraction in all-dielectric, twisted-band structures
Kardaś, Tomasz M.; Jagodnicka, Anna; Wasylczyk, Piotr
2015-11-01
We propose a concept for light polarization management: polarization-dependent diffraction in all-dielectric microstructures. Numerical simulations of light propagation show that with an appropriately configured array of twisted bands, such structures may exhibit zero birefringence and at the same time diffract two circular polarizations with different efficiencies. Non-birefringent structures as thin as 3 μm have a significant difference in diffraction efficiency for left- and right-hand circular polarizations. We identify the structural parameters of such twisted-band matrices for optimum performance as circular polarizers.
Polarization-dependent diffraction in all-dielectric, twisted-band structures
Energy Technology Data Exchange (ETDEWEB)
Kardaś, Tomasz M.; Jagodnicka, Anna; Wasylczyk, Piotr, E-mail: pwasylcz@fuw.edu.pl [Photonic Nanostructure Facility, Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warszawa (Poland)
2015-11-23
We propose a concept for light polarization management: polarization-dependent diffraction in all-dielectric microstructures. Numerical simulations of light propagation show that with an appropriately configured array of twisted bands, such structures may exhibit zero birefringence and at the same time diffract two circular polarizations with different efficiencies. Non-birefringent structures as thin as 3 μm have a significant difference in diffraction efficiency for left- and right-hand circular polarizations. We identify the structural parameters of such twisted-band matrices for optimum performance as circular polarizers.
Boukhvalov, D W; Katsnelson, M. I.; Lichtenstein, A. I.
2008-01-01
Density functional calculations of electronic structure, total energy, structural distortions, and magnetism for hydrogenated single-layer, bilayer, and multi-layer graphene are performed. It is found that hydrogen-induced magnetism can survives only at very low concentrations of hydrogen (single-atom regime) whereas hydrogen pairs with optimized structure are usually nonmagnetic. Chemisorption energy as a function of hydrogen concentration is calculated, as well as energy barriers for hydrog...
Effects of weak nonlinearity on dispersion relations and frequency band-gaps of periodic structures
DEFF Research Database (Denmark)
Sorokin, Vladislav; Thomsen, Jon Juel
2015-01-01
The analysis of the behaviour of linear periodic structures can be traced back over 300 years, to Sir Isaac Newton, and still attracts much attention. An essential feature of periodic struc-tures is the presence of frequency band-gaps, i.e. frequency ranges in which waves cannot propagate...
Energy Technology Data Exchange (ETDEWEB)
Reyes-Ayona, E. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Apartado Postal J-48, Puebla 72570 (Mexico); Instituto Nacional de Astrofisica Optica y Electronica, Apartado Postal 51, Puebla 72000 (Mexico); Halevi, P. [Instituto Nacional de Astrofisica Optica y Electronica, Apartado Postal 51, Puebla 72000 (Mexico)
2012-06-15
We calculate the band structure of a magneto-metallo-dielectric photonic crystal (PC) with hybrid one- and two-dimensional periodicity. Namely, the permittivity (permeability) is periodic in a plane (single direction). The metallic and magnetic properties are described, respectively, by means of the Drude model and a specific permeability model for Barium-M ferrite. Because of the dispersion of both the permeability and the permittivity, we obtain a non-standard eigenvalue problem which is possible to solve by means of a linearization technique. We found that the first band of this PC is very sensitive to the filling fraction of the magnetic component: by changing this fraction from 0.20 to 0.16 the slope - and effective index of refraction - changes from positive to negative. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Directory of Open Access Journals (Sweden)
Z. Felegari
2014-12-01
Full Text Available Cyclophosphamide is a medicine used to interfere with the growth and spread of tumor cells and treat cancers and autoimmune disorders.This work reports the study of anticancer drugs with density functional theory (DFT and electronic structures.Its structure was optimized with B3LYP/6-311G* level in the gas phase and different solvents (SCRF calculation. NBO analysis,NMR parameter,thermodynamic properties,HOMO and LUMO,HOMO-LUMO band gap, and the electronic chemical potential (µ were calculated. The results indicated that the Cyclophosphamide in water solvent is more stable than the gas phase orother solvents.
Quasiparticle GW calculations within the GPAW electronic structure code
DEFF Research Database (Denmark)
Hüser, Falco
properties are to a large extent governed by the physics on the atomic scale, that means pure quantum mechanics. For many decades, Density Functional Theory has been the computational method of choice, since it provides a fairly easy and yet accurate way of determining electronic structures and related...... is considered, which can be regarded as the lowest level of the GW approximation. This thesis documents the implementation of the G0W0 approximation in GPAW. It serves two purposes: First, it can be read as a manual by anyone who is interested in doing GW calculations with GPAW. All features and requirements...
Ab initio calculations and modelling of atomic cluster structure
DEFF Research Database (Denmark)
Solov'yov, Ilia; Lyalin, Andrey G.; Solov'yov, Andrey V.;
2004-01-01
The optimized structure and electronic properties of small sodium and magnesium clusters have been investigated using it ab initio theoretical methods based on density-functional theory and post-Hartree-Fock many-body perturbation theory accounting for all electrons in the system. A new theoretical...... framework for modelling the fusion process of noble gas clusters is presented. We report the striking correspondence of the peaks in the experimentally measured abundance mass spectra with the peaks in the size-dependence of the second derivative of the binding energy per atom calculated for the chain...... of the noble gas clusters up to 150 atoms....
Galvan, D H
2003-01-01
To get insight into the electronic properties of PrFe4P12 skutterudite, band electronic structure calculations, Total and Projected Density of States, Crystal Orbital Overlap Population and Mulliken Population Analysis were performed. The energy bands yield a semi metallic behavior with a direct gap (at gamma) of 0.02 eV. Total and Projected Density of States provided information of the contribution from each orbital of each atom to the total Density of States. Moreover, the bonding strength between some atoms within the unit cell was obtained. Mulliken Population analysis suggests ionic behavior for this compound.
Institute of Scientific and Technical Information of China (English)
无
2007-01-01
The electron structure of FeS2 surface (100) was computed by DFT (density function theory) and the process of electron transfer in sulfide flotation was simulated through ab-initio calculation. The results show that the interaction between xanthate and FeS2 is controlled by the energy of valence band. The products and degree of the reaction depend on the density of state of valence band and concentration of positive hole in valence band. Interaction between xanthate and pyrite can be changed by modifying the election structure of the surface of pyrite. Xanthate is adsorbed on the surface of intrinsic pyrite. But the amount of xanthate adsorbed on the surface of the pyrite with sulfur vacancy is more than that on the surface of the intrinsic pyrite due to the higher electron and vacancy density. Xanthate is not adsorbed on the surface of pyrite with Fe vacancy because of its high Fermi energy.
First-principles calculation on dilute magnetic alloys in zinc blend crystal structure
Energy Technology Data Exchange (ETDEWEB)
Ullah, Hamid, E-mail: hamidullah@yahoo.com [Department of Physics, Government Post Graduate Jahanzeb College, Saidu Sharif Swat (Pakistan); Inayat, Kalsoom [Department of Physics, Government Post Graduate Jahanzeb College, Saidu Sharif Swat (Pakistan); Khan, S.A; Mohammad, S. [Department of Physics, Materials Modeling Laboratory, Hazara University, Mansehra 21300 (Pakistan); Ali, A. [Department of Advanced Materials Science & Engineering, Hanseo University, Seosan-si, Chungnam-do 356-706 (Korea, Republic of); Alahmed, Z.A. [Department of Physics and Astronomy, King Saud University, Riyadh 11451 (Saudi Arabia); Reshak, A.H. [New Technologies-Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia)
2015-07-01
Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic alloys in zinc blende structure. The first-principles study is carried out on Mn doped III–V semiconductors. The calculated band structures, electronic properties and magnetic properties of Ga{sub 1−x}Mn{sub x}X (X=P, As) compounds reveal that Ga{sub 0.75}Mn{sub 0.25}P is half metallic turned to be metallic with increasing x to 0.5 and 0.75, whereas substitute P by As cause to maintain the half-metallicity nature in both of Ga{sub 0.75}Mn{sub 0.25}As and Ga{sub 0.5}Mn{sub 0.5}As and tune Ga{sub 0.25}Mn{sub 0.75}As to be metallic. Calculated total magnetic moments and the robustness of half-metallicity of Ga{sub 0.75}Mn{sub 0.25}P, Ga{sub 0.75}Mn{sub 0.25}As and Ga{sub 0.5}Mn{sub 0.5}As with respect to the variation in lattice parameters are also discussed. The predicted theoretical evidence shows that some Mn-doped III–V semiconductors can be effectively used in spintronic devices.
Directory of Open Access Journals (Sweden)
Wujisiguleng Bao
2012-01-01
Full Text Available Cu2ZnSnS4 (CZTS has attracted much attention recently as an absorber layer material in a heterojunction solar cell. Using the first-principles method, we calculate the band offsets for the CdS/CZTS heterojunction. The valence band offset is 1.2 eV for the (001 CdS/CZTS heterointerface and 1.0 eV for the (010 heterointerface, when CZTS is considered to crystallize in the kesterite structure. When CZTS is considered to crystallize in the stannite structure, eV for the (001 heterointerface and eV for the (010 heterointerface. In any case, the conduction band minimum of CZTS is higher than that of CdS, and the conduction band offset is in a range between 0.1 and 0.4 eV.
Liu, Zhe; Jiang, Liwei; Zheng, Yisong
2016-07-01
By means of a numerical diagonalization approach, we calculate the electronic structure of a three-dimensional topological insulator (3DTI) quantum wire (QW) in the presence of a magnetic field. The QW can be viewed as a 3DTI film with lateral surfaces, when its rectangular cross section has a large aspect ratio. Our calculation indicates that nonchiral edge states emerge because of the confined states at the lateral surfaces. These states completely cover the valence band region among the Landau levels, which reasonably account for the absence of the ν Hall effect in the relevant experimental works. In an ultrathin 3DTI film, inversion between the electron-type and hole-type bands occurs, which leads to the so-called pseudo-spin Hall effect. In a 3DTI QW with a square cross section, a tilting magnetic field can establish well-defined Landau levels in all four surfaces. In such a case, the quantum Hall edge states are localized at the square corners, characterized by the linearly crossing one-dimensional band profile. And they can be shifted between the adjacent corners by simply rotating the magnetic field.
Electronic structure calculations toward new potentially AChE inhibitors
de Paula, A. A. N.; Martins, J. B. L.; Gargano, R.; dos Santos, M. L.; Romeiro, L. A. S.
2007-10-01
The main purpose of this study was the use of natural non-isoprenoid phenolic lipid of cashew nut shell liquid from Anacardium occidentale as lead material for generating new potentially candidates of acetylcholinesterase inhibitors. Therefore, we studied the electronic structure of 15 molecules derivatives from the cardanol using the following groups: methyl, acetyl, N, N-dimethylcarbamoyl, N, N-dimethylamine, N, N-diethylamine, piperidine, pyrrolidine, and N-benzylamine. The calculations were performed at RHF level using 6-31G, 6-31G(d), 6-31+G(d) and 6-311G(d,p) basis functions. Among the proposed compounds we found that the structures with substitution by acetyl, N, N-dimethylcarbamoyl, N, N-dimethylamine, and pyrrolidine groups were better correlated to rivastigmine indicating possible activity.
UWB Band-notched Adjustable Antenna Using Concentric Split-ring Slots Structure
Yin, Y.; Hong, J. S.
2014-09-01
In this paper, a kind of concentric split-ring slots structure is utilized to design a novel triple-band-notched UWB antenna. Firstly, a concentric split-ring slots structure that has a higher VSWR than that of a single slot at notch frequency is presented. What's more, the structure is very simple and feasible to obtain notched-band at different frequency by adjustment of the length of slot. Secondly, a triple-band-notched antenna, whose notched bands are at 3.52-3.81 GHz for WiMAX and 5.03-5.42 GHz and 5.73-56.17 GHz for WLAN, is designed by using this structure. At last, a compact size of 24 × 30 mm2 of the proposed antenna has been fabricated and measured and it is shown that the proposed antenna has a broadband matched impedance (3.05-14 GHz, VSWR < 2), relatively stable gain and good omnidirectional radiation patterns at low bands.
Ab initio theory for ultrafast magnetization dynamics with a dynamic band structure
Mueller, B. Y.; Haag, M.; Fähnle, M.
2016-09-01
Laser-induced modifications of magnetic materials on very small spatial dimensions and ultrashort timescales are a promising field for novel storage and spintronic devices. Therefore, the contribution of electron-electron spin-flip scattering to the ultrafast demagnetization of ferromagnets after an ultrashort laser excitation is investigated. In this work, the dynamical change of the band structure resulting from the change of the magnetization in time is taken into account on an ab initio level. We find a large influence of the dynamical band structure on the magnetization dynamics and we illustrate the thermalization and relaxation process after laser irradiation. Treating the dynamical band structure yields a demagnetization comparable to the experimental one.
Attenuation structure beneath the volcanic front in northeastern Japan from broad-band seismograms
Takanami, Tetsuo; Selwyn Sacks, I.; Hasegawa, Akira
2000-10-01
Anelastic structure in the asthenosphere beneath the volcanic front in northeastern Japan arc is estimated by using the spectral amplitude ratio data of P and S waves from about 100 events which occurred in the subducting Pacific slab below Japan. These earthquakes occurred within a 90 km radius centered about the station Sawauchi (SWU), with focal depths ranging from 60 to 200 km. Waveforms were recorded by the Carnegie broad-band three-component seismograph and were corrected for instrument responses, crustal reverberations, corner frequencies, and superimposed noise. Ray paths and travel times of P and S waves are calculated using a three-dimensional velocity model [Zhao, D., Hasegawa, A., Horiuchi, S., 1992. J. Geophys. Res. 97, 19909-19928]. We find a low- Q region ( QS˜70) extending down to 55 km depth from the lower crust beneath the volcanic front. Using Q-temperature laboratory results [Sato, H., Sacks, I.S., Murase, T., Muncill, G., Fukushima, H., 1989. J. Geophys. Res. 94, 10647-10661], this implies a temperature of about 130°C higher than the eastern forearc region and about 30°C higher than the western backarc region, in good agreement with the tomographic results of Zhao et al. [Zhao, D., Hasegawa, A., Horiuchi, S., 1992. J. Geophys. Res. 97, 19909-19928]. This suggests that low velocities in the crust and uppermost mantle beneath SWU may be explained by a subsolidus temperature increase without partial melting.
Multi-quasiparticle {gamma}-band structure in neutron-deficient Ce and Nd isotopes
Energy Technology Data Exchange (ETDEWEB)
Sheikh, J.A. [Physics Division, Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, TN 37831 (United States); Department of Physics and Astronomy, University of Tennessee, Knoxville, TN 37996 (United States); Department of Physics, University of Kashmir, Srinagar, 190 006 (India); Bhat, G.H. [Department of Physics, University of Kashmir, Srinagar, 190 006 (India); Palit, R.; Naik, Z. [Tata Institute of Fundamental Research, Colaba, Mumbai, 400 005 (India); Sun, Y. [Department of Physics and Astronomy, University of Tennessee, Knoxville, TN 37996 (United States); Department of Physics, Shanghai Jiao Tong University, Shanghai 200240 (China); Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)], E-mail: sunyang@sjtu.edu.cn
2009-06-01
The newly developed multi-quasiparticle triaxial projected shell model approach is employed to study the high-spin band structures in neutron-deficient even-even Ce- and Nd-isotopes. It is observed that {gamma}-bands are built on each intrinsic configuration of the triaxial mean-field deformation. Due to the fact that a triaxial configuration is a superposition of several K-states, the projection from these states results in several low-lying bands originating from the same intrinsic configuration. This generalizes the well-known concept of the surface {gamma}-oscillation in deformed nuclei based on the ground-state to {gamma}-bands built on multi-quasiparticle configurations. This new feature provides an alternative explanation on the observation of two I=10 aligning states in {sup 134}Ce and both exhibiting a neutron character.
Multi-Quasiparticle Gamma-Band Structure in Neutron-Deficient Ce and Nd Isotopes
Energy Technology Data Exchange (ETDEWEB)
Sheikh, Javid [ORNL; Bhat, G. H. [University of Kashmir, Srinagar, India; Palit, R. [Tata Institute of Fundamental Research, Mumbai, India; Naik, Z. [Tata Institute of Fundamental Research, Mumbai, India; Sun, Y. [Shanghai Jiao Tong University, Shanghai
2009-01-01
The newly developed multi-quasiparticle triaxial projected shell-model approach is employed to study the high-spin band structures in neutron-deficient even-even Ce and Nd isotopes. It is observed that gamma bands are built on each intrinsic configuration of the triaxial mean-field deformation. Due to the fact that a triaxial configuration is a superposition of several K states, the projection from these states results in several low-lying bands originating from the same intrinsic configuration. This generalizes the well-known concept of the surface gamma oscillation in deformed nuclei based on the ground state to gamma bands built on multi-quasiparticle configurations. This new feature provides an alternative explanation on the observation of two I=10 aligning states in ^{134}Ce and both exhibiting a neutron character.
Valence band structure of strained Si/（111）Si1-xGex
Institute of Scientific and Technical Information of China (English)
无
2010-01-01
The strained Si techique has been widely adopted in the high-speed and high-performance devices and circuits. Based on the valence band E-k relations of strained Si/(111)Si1-xGex, the valence band and hole effective mass along the [111] and [-110] directions were obtained in this work. In comparison with the relaxed Si, the valence band edge degeneracy was partially lifted, and the significant change was observed band structures along the [111] and [-110] directions, as well as in its corresponding hole effective masses with the increasing Ge fraction. The results obtained can provide valuable references to the investigation concerning the Si-based strained devices enhancement and the conduction channel design related to stress and orientation.
International Nuclear Information System (INIS)
Diamond-like Cu-based multinary semiconductors are a rich family of materials that hold promise in a wide range of applications. Unfortunately, accurate theoretical understanding of the electronic properties of these materials is hindered by the involvement of Cu d electrons. Density functional theory (DFT) based calculations using the local density approximation or generalized gradient approximation often give qualitative wrong electronic properties of these materials, especially for narrow-gap systems. The modified Becke-Johnson (mBJ) method has been shown to be a promising alternative to more elaborate theory such as the GW approximation for fast materials screening and predictions. However, straightforward applications of the mBJ method to these materials still encounter significant difficulties because of the insufficient treatment of the localized d electrons. We show that combining the promise of mBJ potential and the spirit of the well-established DFT + U method leads to a much improved description of the electronic structures, including the most challenging narrow-gap systems. A survey of the band gaps of about 20 Cu-based semiconductors calculated using the mBJ + U method shows that the results agree with reliable values to within ±0.2 eV
Crystal structure and band gap of AlGaAsN
Munich, D. P.; Pierret, R. F.
1987-09-01
Quantum dielectric theory is applied to the quaternary alloy Al xGa 1- xAs 1- yN y to predict its electronic properties as a function of Al and N mole fractions. Results are presented for the expected crystal structure, minimum electron energy band gap, and direction in k-space of the band gap minimum for all x and y values. The results suggest that, for a proper choice of x and y, Al xGa 1- xAs 1- yN y could exhibit certain advantages over Al xGa 1- xAs when utilized in field-effect transistor structures.
Indian Academy of Sciences (India)
Sonal Singhal; A K Saxena; S Dasgupta
2007-10-01
The electron drift mobility in conduction band of GaAs has been calculated before, but for the first time, we have made attempts to estimate the electron mobilities in higher energy L and X minima. We have also calculated the value of mobility of two-dimensional electron gas needed to predict hetero-structure device characteristics using GaAs. Best scattering parameters have been derived by close comparison between experimental and theoretical mobilities. Room temperature electron mobilities in , L and X valleys are found to be nearly 9094, 945 and 247 cm2 /V-s respectively. For the above valleys, the electron masses, deformation potentials and polar phonon temperatures have been determined to be (0.067, 0.22, 0.39m 0 ), (8.5, 9.5, 6.5 eV), and (416, 382, 542 K) as best values, respectively. The 2-DEG electron mobility in minimum increases to 1.54 × 106 from 1.59 × 105 cm2 /V-s (for impurity concentration of 1014 cm-3) at 10 K. Similarly, the 2-DEG electron mobility values in L and X minima are estimated to be 2.28 × 105 and 1.44 × 105 cm2 /V-s at 10 K, which are about ∼ 4.5 and ∼ 3.9 times higher than normal value with impurity scattering present.
International Nuclear Information System (INIS)
The structural, electronic, and optical properties of binary ZnO, ZnSe compounds, and their ternary ZnO1−xSex alloys are computed using the accurate full potential linearized augmented plane wave plus local orbital (FP-LAPW + lo) method in the rocksalt (B1) and zincblende (B3) crystallographic phases. The electronic band structures, fundamental energy band gaps, and densities of states for ZnO1−xSex are evaluated in the range 0 ≤ x ≤ 1 using Wu—Cohen (WC) generalized gradient approximation (GGA) for the exchange—correlation potential. Our calculated results of lattice parameters and bulk modulus reveal a nonlinear variation for pseudo-binary and their ternary alloys in both phases and show a considerable deviation from Vegard's law. It is observed that the predicted lattice parameter and bulk modulus are in good agreement with the available experimental and theoretical data. We establish that the composition dependence of band gap is semi-metallic in B1 phase, while a direct band gap is observed in B3 phase. The calculated density of states is described by taking into account the contribution of Zn 3d, O 2p, and Se 4s, and the optical properties are studied in terms of dielectric functions, refractive index, reflectivity, and energy loss function for the B3 phase and are compared with the available experimental data. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Electronic structures of halogen-doped Cu2O based on DFT calculations
Zhao, Zong-Yan; Yi, Juan; Zhou, Da-Cheng
2014-01-01
In order to construct p—n homojunction of Cu2O-based thin film solar cells that may increase its conversion efficiency, to synthesize n-type Cu2O with high conductivity is extremely crucial, and considered as a challenge in the near future. The doping effects of halogen on electronic structure of Cu2O have been investigated by density function theory calculations in the present work. Halogen dopants form donor levels below the bottom of conduction band through gaining or losing electrons, suggesting that halogen doping could make Cu2O have n-type conductivity. The lattice distortion, the impurity formation energy, the position, and the band width of donor level of Cu2O1-xHx (H = F, Cl, Br, I) increase with the halogen atomic number. Based on the calculated results, chlorine doping is an effective n-type dopant for Cu2O, owing to the lower impurity formation energy and suitable donor level.
Wujisiguleng Bao; Masaya Ichimura
2012-01-01
Cu2ZnSnS4 (CZTS) has attracted much attention recently as an absorber layer material in a heterojunction solar cell. Using the first-principles method, we calculate the band offsets for the CdS/CZTS heterojunction. The valence band offset is 1.2 eV for the (001) CdS/CZTS heterointerface and 1.0 eV for the (010) heterointerface, when CZTS is considered to crystallize in the kesterite structure. When CZTS is considered to crystallize in the stannite structure, eV for the (001) heterointerface...
Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure
Huang, Zhong-Mei; Huang, Wei-Qi; Liu, Shi-Rong; Dong, Tai-Ge; Wang, Gang; Wu, Xue-Ke; Qin, Cao-Jian
2016-04-01
In our experiment, it was observed that the emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional (1D) structure. The results of experiment and calculation demonstrate that the uniaxial tensile strain in the (111) and (110) direction can efficiently transform Ge to a direct bandgap material with the bandgap energy useful for technological application. It is interested that under the tensile strain from Ge-GeSn layers on 1D structure in which the uniaxial strain could be obtained by curved layer (CL) effect, the two bandgaps EΓg and ELg in the (111) direction become nearly equal at 0.83 eV related to the emission of direct-gap band near 1500 nm in the experiments. It is discovered that the red-shift of the peaks from 1500 nm to 1600 nm occurs with change of the uniaxial tensile strain, which proves that the peaks come from the emission of direct-gap band.
Sun, Feng; Wang, Li; Stoumpos, Constantinos C.
2016-08-01
The synthesis, structure, and characterization of a new centrosymmetric borate Pb2O[BO2(OH)] based on anion-centered OPb4 tetrahedra are reported. Pb2O[BO2(OH)] crystallizes in monoclinic space group C2/m with a=12.725(7) Å, b=5.698(3) Å, c=7.344(4) Å, β=116.277(6)°. The electronic band structure and density of states of Pb2O[BO2(OH)] have been calculated via the density functional theory (DFT). Electron density difference calculation indicates that lone-pair electrons of Pb2+ cation should be stereoactive.
Complete multipactor suppression in an X-band dielectric-loaded accelerating structure
Energy Technology Data Exchange (ETDEWEB)
Jing, C. [Euclid Techlabs, LLC, 5900 Harper Rd, Solon, Ohio 44139, USA; High Energy Physics Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Gold, S. H. [Plasma Physics Division, Naval Research Laboratory, Washington, DC 20375, USA; Fischer, Richard [Plasma Physics Division, Naval Research Laboratory, Washington, DC 20375, USA; Gai, W. [High Energy Physics Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
2016-05-09
Multipactor is a major issue limiting the gradient of rf-driven Dielectric-Loaded Accelerating (DLA) structures. Theoretical models have predicted that an axial magnetic field applied to DLA structures may completely block the multipactor discharge. However, previous attempts to demonstrate this magnetic field effect in an X-band traveling-wave DLA structure were inconclusive, due to the axial variation of the applied magnetic field, and showed only partial suppression of the multipactor loading [Jing et al., Appl. Phys. Lett. 103, 213503 (2013)]. The present experiment has been performed under improved conditions with a uniform axial magnetic field extending along the length of an X-band standing-wave DLA structure. Multipactor loading began to be continuously reduced starting from 3.5 kG applied magnetic field and was completely suppressed at 8 kG. Dependence of multipactor suppression on the rf gradient inside the DLA structure was also measured.
Band gap structures in two-dimensional super porous phononic crystals.
Liu, Ying; Sun, Xiu-zhan; Chen, Shao-ting
2013-02-01
As one kind of new linear cellular alloys (LCAs), Kagome honeycombs, which are constituted by triangular and hexagonal cells, attract great attention due to the excellent performance compared to the ordinary ones. Instead of mechanical investigation, the in-plane elastic wave dispersion in Kagome structures are analyzed in this paper aiming to the multi-functional application of the materials. Firstly, the band structures in the common two-dimensional (2D) porous phononic structures (triangular or hexagonal honeycombs) are discussed. Then, based on these results, the wave dispersion in Kagome honeycombs is given. Through the component cell porosity controlling, the effects of component cells on the whole responses of the structures are investigated. The intrinsic relation between the component cell porosity and the critical porosity of Kagome honeycombs is established. These results will provide an important guidance in the band structure design of super porous phononic crystals.
The Development of Layered Photonic Band Gap Structures Using a Micro-Transfer Molding Technique
Energy Technology Data Exchange (ETDEWEB)
Kevin Jerome Sutherland
2001-05-01
Photonic band gap (PBG) crystals are periodic dielectric structures that manipulate electromagnetic radiation in a manner similar to semiconductor devices manipulating electrons. Whereas a semiconductor material exhibits an electronic band gap in which electrons cannot exist, similarly, a photonic crystal containing a photonic band gap does not allow the propagation of specific frequencies of electromagnetic radiation. This phenomenon results from the destructive Bragg diffraction interference that a wave propagating at a specific frequency will experience because of the periodic change in dielectric permitivity. This gives rise to a variety of optical applications for improving the efficiency and effectiveness of opto-electronic devices. These applications are reviewed later. Several methods are currently used to fabricate photonic crystals, which are also discussed in detail. This research involves a layer-by-layer micro-transfer molding ({mu}TM) and stacking method to create three-dimensional FCC structures of epoxy or titania. The structures, once reduced significantly in size can be infiltrated with an organic gain media and stacked on a semiconductor to improve the efficiency of an electronically pumped light-emitting diode. Photonic band gap structures have been proven to effectively create a band gap for certain frequencies of electro-magnetic radiation in the microwave and near-infrared ranges. The objective of this research project was originally two-fold: to fabricate a three dimensional (3-D) structure of a size scaled to prohibit electromagnetic propagation within the visible wavelength range, and then to characterize that structure using laser dye emission spectra. As a master mold has not yet been developed for the micro transfer molding technique in the visible range, the research was limited to scaling down the length scale as much as possible with the current available technology and characterizing these structures with other methods.
Study on temperature property of band structures in onedimensional photonic crystals
Institute of Scientific and Technical Information of China (English)
无
2007-01-01
Using transfer matrix method, the optical transmission properties in one-dimensional (1-D) photonic crystal is analyzed.When the temperature varies, not only the refractive index of the optical medium is changed because of the thermo-optical effect, but also the thickness of the optical medium is changed due to the thermal-expansion effect. Thus, the structure of 1/4 wave-plate stack in original photonic crystal is destroyed and the band structure varies. In this work, the effects of the temperature variation on the first and second band gap in a 1-D photonic crystal are analyzed in detail. It is found that the changes of the starting wavelength, the cut-off wavelength and the forbidden band width depend linearly on the temperature.
Mini-Dirac cones in the band structure of a copper intercalated epitaxial graphene superlattice
Forti, S.; Stöhr, A.; Zakharov, A. A.; Coletti, C.; Emtsev, K. V.; Starke, U.
2016-09-01
The electronic band structure of an epitaxial graphene superlattice, generated by intercalating a monolayer of Cu atoms, is directly imaged by angle-resolved photoelectron spectroscopy. The 3.2 nm lateral period of the superlattice is induced by a varying registry between the graphene honeycomb and the Cu atoms as imposed by the heteroepitaxial interface Cu/SiC. The carbon atoms experience a lateral potential across the supercell of an estimated value of about 65 meV. The potential leads to strong energy renormalization in the band structure of the graphene layer and the emergence of mini-Dirac cones. The mini-cones’ band velocity is reduced to about half of graphene's Fermi velocity. Notably, the ordering of the interfacial Cu atoms can be reversibly blocked by mild annealing. The superlattice indeed disappears at ∼220 °C.
Seiler, Christian
2016-01-01
A formalism for electronic-structure calculations is presented that is based on the functional renormalization group (FRG). The traditional FRG has been formulated for systems that exhibit a translational symmetry with an associated Fermi surface, which can provide the organization principle for the renormalization group (RG) procedure. We here advance an alternative formulation, where the RG-flow is organized in the energy-domain rather than in k-space. This has the advantage that it can also be applied to inhomogeneous matter lacking a band-structure, such as disordered metals or molecules. The energy-domain FRG ({\\epsilon}FRG) presented here accounts for Fermi-liquid corrections to quasi-particle energies and particle-hole excitations. It goes beyond the state of the art GW-BSE, because in {\\epsilon}FRG the Bethe-Salpeter equation (BSE) is solved in a self-consistent manner. An efficient implementation of the approach that has been tested against exact diagonalization calculations and calculations based on...
International Nuclear Information System (INIS)
Highlights: • The band gaps for CaB6, SrB6 and BaB6 depend sensitively on the values of lattice constant a and positional parameter z. • The order in elastic anisotropy is CaB6 > SrB6 > BaB6. • There are LO/TO splitting lines in the range of 5–10 THz at G point. - Abstract: The electronic structures, mechanical and thermodynamic properties of alkaline-earth hexaborides MB6 (M = Ca, Sr or Ba) are calculated from first principles using density functional theory combined with the quasi-harmonic approximation. These three alkaline-earth hexaborides are semiconductors with a slightly increased trend for their band gaps as M orders from Ca to Ba. Their band gaps depend sensitively on the values of lattice constant a and internal parameter z. The polycrystalline values of the elastic constants and bulk, shear and Young’s moduli are consistent with those determined experimentally. All alkaline-earth hexaborides have strongly anisotropic elastic properties in the order of CaB6 > SrB6 > BaB6. By using the phonon calculations, the thermodynamic properties are investigated. The obtained phonon dispersion relations for CaB6, SrB6, and BaB6 show similar features and there are LO/TO splitting lines in the range of 5–10 THz. Finally, the thermal conductivities of CaB6, SrB6 and BaB6 are evaluated via Clarke’s model and Cahill’s model
Optical properties and band structure of ZnP{sub 2}-D{sub 4}{sup 8}
Energy Technology Data Exchange (ETDEWEB)
Stamov, I.G. [T.G. Shevchenko State University of Pridnestrovie, 25 Oktyabrya street 107, 3300 Tiraspol, Republic of Moldova (Moldova, Republic of); Syrbu, N.N., E-mail: sirbunn@yahoo.com [Technical University of Moldova, 168 Stefan cel Mare Avenue, 2004 Chisinau, Republic of Moldova (Moldova, Republic of); Zalamai, V.V. [Institute of Applied Physics, Academy of Sciences of Moldova, 5 Academy Street, 2028 Chisinau, Republic of Moldova (Moldova, Republic of)
2014-05-01
The emission lines of bound and free excitons and their phonon replicas were observed in the luminescence spectra of ZnP{sub 2}-D{sub 4}{sup 8} crystals doped with Mn, Sn, Cd and Sb measured at 10 K. The emission lines are described by the model of axial center levels. Models of the bands of the bound excitons with different axial centers (Mn, Sn, Cd and Sb) are presented. It was observed that the indirect transitions in the excitonic bands were nonpolarized and that the direct transitions were polarized. The minimal direct energy gaps in the polarization E∥c are due to the allowed Γ{sub 1}→Γ{sub 1} transitions, and the gaps in the polarization E⊥c are due to the Γ{sub 2}→Γ{sub 1} transitions. The temperature shift coefficient of the bands gaps differs for different polarizations in the temperature interval from 2 to 10 K (ΔE/ΔT=3.5 meV/K and 1 meV/K for E∥c and E⊥c, respectively). The optical constants n, k, ε{sub 1}, ε{sub 2,}d{sup 2}ε{sub 1}/dE{sup 2} and d{sup 2}ε{sub 2}/dE{sup 2} were calculated for the energy interval 1.5–10 eV using the Kramers-Kronig analysis of measured reflection spectra. The features observed in these spectra were interpreted using two types theoretical calculations of band structure as optical transitions.
Gradient type optimization methods for electronic structure calculations
Zhang, Xin; Wen, Zaiwen; Zhou, Aihui
2013-01-01
The density functional theory (DFT) in electronic structure calculations can be formulated as either a nonlinear eigenvalue or direct minimization problem. The most widely used approach for solving the former is the so-called self-consistent field (SCF) iteration. A common observation is that the convergence of SCF is not clear theoretically while approaches with convergence guarantee for solving the latter are often not competitive to SCF numerically. In this paper, we study gradient type methods for solving the direct minimization problem by constructing new iterations along the gradient on the Stiefel manifold. Global convergence (i.e., convergence to a stationary point from any initial solution) as well as local convergence rate follows from the standard theory for optimization on manifold directly. A major computational advantage is that the computation of linear eigenvalue problems is no longer needed. The main costs of our approaches arise from the assembling of the total energy functional and its grad...
Molecular Structure, Theoretical Calculation and Thermodynamic Properties of Tebuconazole
Institute of Scientific and Technical Information of China (English)
MA Haixia; SONG Jirong; HUANG Ting; LU Xingqiang; XU Kangzhen; SUN Xiaohong
2009-01-01
Single crystals of 5-(4-chlorophenyl)-2,2-dimethyl-3-(1,2,4-triazol-1-ylmethyl)-pentom-3-ol (tebuconazole) were obtained in toluene. The single-crystal X-ray diffraction studies showed that it crystallized in the monoclinic system, with space group P2(1)/c and crystal parameters of a= 1.1645(1) nm, b= 1.6768(2) nm, c= 1.7478(2) nm,β=92.055(2)°, Dc= 1.199 g/cm3, Z=4 and F(000)= 1312. Density functional theory (DFT) B3LYP was employed to optimize the structure and calculate the frequencies of tebuconazole. The calculated geometrical parameters are close to the corresponding experimental ones. The specific heat capacity of the title compound was determined with continuous Cp mode of a mircocalorimeter. In the determining temperature range from 283 to 353 K, the special heat capacity of the title compound presents good linear relation with temperature. Using the determined relation-ship of Cp with temperature T, thermodynamic functions (enthalpy, entropy and Gibbs free energy) of the title compound between 283 and 353 K, relative to the standard temperature 298.15 K, were derived through thermody-namic relationship.
Adaptations in Electronic Structure Calculations in Heterogeneous Environments
Energy Technology Data Exchange (ETDEWEB)
Talamudupula, Sai [Iowa State Univ., Ames, IA (United States)
2011-01-01
Modern quantum chemistry deals with electronic structure calculations of unprecedented complexity and accuracy. They demand full power of high-performance computing and must be in tune with the given architecture for superior e ciency. To make such applications resourceaware, it is desirable to enable their static and dynamic adaptations using some external software (middleware), which may monitor both system availability and application needs, rather than mix science with system-related calls inside the application. The present work investigates scienti c application interlinking with middleware based on the example of the computational chemistry package GAMESS and middleware NICAN. The existing synchronous model is limited by the possible delays due to the middleware processing time under the sustainable runtime system conditions. Proposed asynchronous and hybrid models aim at overcoming this limitation. When linked with NICAN, the fragment molecular orbital (FMO) method is capable of adapting statically and dynamically its fragment scheduling policy based on the computing platform conditions. Signi cant execution time and throughput gains have been obtained due to such static adaptations when the compute nodes have very di erent core counts. Dynamic adaptations are based on the main memory availability at run time. NICAN prompts FMO to postpone scheduling certain fragments, if there is not enough memory for their immediate execution. Hence, FMO may be able to complete the calculations whereas without such adaptations it aborts.
Granum, E; Thomason, M G
1990-01-01
A structural pattern recognition approach to the analysis and classification of metaphase chromosome band patterns is presented. An operational method of representing band pattern profiles as sharp edged idealized profiles is outlined. These profiles are nonlinearly scaled to a few, but fixed number of "density" levels. Previous experience has shown that profiles of six levels are appropriate and that the differences between successive bands in these profiles are suitable for classification. String representations, which focuses on the sequences of transitions between local band pattern levels, are derived from such "difference profiles." A method of syntactic analysis of the band transition sequences by dynamic programming for optimal (maximal probability) string-to-network alignments is described. It develops automatic data-driven inference of band pattern models (Markov networks) per class, and uses these models for classification. The method does not use centromere information, but assumes the p-q-orientation of the band pattern profiles to be known a priori. It is experimentally established that the method can build Markov network models, which, when used for classification, show a recognition rate of about 92% on test data. The experiments used 200 samples (chromosome profiles) for each of the 22 autosome chromosome types and are designed to also investigate various classifier design problems. It is found that the use of a priori knowledge of Denver Group assignment only improved classification by 1 or 2%. A scheme for typewise normalization of the class relationship measures prove useful, partly through improvements on average results and partly through a more evenly distributed error pattern. The choice of reference of the p-q-orientation of the band patterns is found to be unimportant, and results of timing of the execution time of the analysis show that recent and efficient implementations can process one cell in less than 1 min on current standard
The valence band electronic structure of the Cu(111) (√3X√3)R30deg-Si interface
International Nuclear Information System (INIS)
Full text: The structure and bonding of the copper-silicon interface is of considerable interest from a number of aspects. Firstly as a catalyst in the commercial synthesis of silane polymers, secondly as an anti-corrosion treatment, and thirdly, the formation of a well ordered and reactive silicon layer, which can be oxidised is relevant in the creation of ultra-thin silicon oxide-metal interfaces for electronic devices. Silicon is capable of forming a number of compounds with copper, the most widely studied of which is Cu3Si. Calculations have shown that when silicon impurity atoms are incorporated into a copper solid, there is an interaction between copper 3d levels and the 3s and sp levels of silicon. The silicon 2p orbitals rehybridise with the copper 3d band to form bonding and antibonding states separated by -4 eV. The resulting compounds have metallic, rather than semiconducting nature, there is charge transfer from copper to silicon and there is an increase in electron density into the silicon valence bands, making silicon more reactive. The splitting of the density of states near the Fermi edge has been measured as 4-5 eV in amorphous copper-silicon alloys, using Si Kβ fluorescence spectroscopy and has also been inferred from the 4 eV splitting of the LV V auger lines in Cu-Si compounds and in copper deposited on Si(100) and Si(111) surfaces. In this study we have used high resolution valence band photoemission spectroscopy to investigate the nature of the silicon valence bands in a well ordered silicon-copper interface. By comparing the valence band spectra of the clean surface and those from the silicon interface, we are able to identify three silicon-derived features which are in agreement with other published data. We suggest that these levels are due to emission from the 3s and 3p levels of Si
Energy Technology Data Exchange (ETDEWEB)
Sipr, Ondrej; Simunek, Antonin [Institute of Physics AS CR, Cukrovarnicka 10, Prague (Czech Republic); Minar, Jan; Ebert, Hubert [Universitaet Muenchen (Germany)
2010-07-01
L{sub 2,3}-edge XAS and XMCD spectra of 3d elements are calculated via a self-consistent LDA+DMFT method (including thus valence-band correlations). It is found that the asymmetry of the calculated XAS white lines increases upon inclusion of the correlations for Fe and Co but not for Ni. The change in the height of the L{sub 3} and L{sub 2} peaks in the XMCD spectra is in a good agreement with the change of the orbital magnetic moment caused by adding the valence-band correlations. As a whole, adding valence-band correlations improves the agreement between the theory and experiment but visible differences still remain. Therefore, a core hole is additionally accounted for via the final state approximation and the impact of such a procedure is assessed.
A Review of Electronic Band Structure of Graphene and Carbon Nanotubes Using Tight Binding
Directory of Open Access Journals (Sweden)
Davood Fathi
2011-01-01
Full Text Available The electronic band structure variations of single-walled carbon nanotubes (SWCNTs using Huckle/tight binding approximation theory are studied. According to the chirality indices, the related expressions for energy dispersion variations of these elements are derived and plotted for zigzag and chiral nanotubes.
Evolution of structural relaxation spectra of glycerol within the gigahertz band
Franosch, T.; Göauttze, W.; Mayr, M. R.; Singh, A. P.
1997-03-01
The structural relaxation spectra and the crossover from relaxation to oscillation dynamics, as measured by Wuttke et al. [Phys. Rev. Lett. 72, 3052 (1994)] for glycerol within the GHz band by depolarized light scattering, are described by the solutions of a schematic mode coupling theory model. The applicability of scaling laws for the discussion of the model solutions is considered.
Direct Measurement of the Band Structure of a Buried Two-Dimensional Electron Gas
DEFF Research Database (Denmark)
Miwa, Jill; Hofmann, Philip; Simmons, Michelle Y.;
2013-01-01
We directly measure the band structure of a buried two dimensional electron gas (2DEG) using angle resolved photoemission spectroscopy. The buried 2DEG forms 2 nm beneath the surface of p-type silicon, because of a dense delta-type layer of phosphorus n-type dopants which have been placed there...
DEFF Research Database (Denmark)
Dery, H.; Tromborg, Bjarne; Eisenstein, G.
2003-01-01
We describe carrier-carrier scattering dynamics in an inverted quantum well structure including the nonparabolic nature of the valance band. A solution of the semiconductor Bloch equations yields strong evidence to a large change in the temporal evolution of the carrier distributions compared...
Directory of Open Access Journals (Sweden)
Hao Liu
2013-01-01
Full Text Available A modified electromagnetic-bandgap (M-EBG structure and its application to planar monopole ultra-wideband (UWB antenna are presented. The proposed M-EBG which comprises two strip patch and an edge-located via can perform dual notched bands. By properly designing and placing strip patch near the feedline, the proposed M-EBG not only possesses a simple structure and compact size but also exhibits good band rejection. Moreover, it is easy to tune the dual notched bands by altering the dimensions of the M-EBG. A demonstration antenna with dual band-notched characteristics is designed and fabricated to validate the proposed method. The results show that the proposed antenna can satisfy the requirements of VSWR < 2 over UWB 3.1–10.6 GHz, except for the rejected bands of the world interoperability for microwave access (WiMAX and the wireless local area network (WLAN at 3.5 GHz and 5.5 GHz, respectively.
Valley-dependent band structure and valley polarization in periodically modulated graphene
Lu, Wei-Tao
2016-08-01
The valley-dependent energy band and transport property of graphene under a periodic magnetic-strained field are studied, where the time-reversal symmetry is broken and the valley degeneracy is lifted. The considered superlattice is composed of two different barriers, providing more degrees of freedom for engineering the electronic structure. The electrons near the K and K' valleys are dominated by different effective superlattices. It is found that the energy bands for both valleys are symmetric with respect to ky=-(AM+ξ AS) /4 under the symmetric superlattices. More finite-energy Dirac points, more prominent collimation behavior, and new crossing points are found for K' valley. The degenerate miniband near the K valley splits into two subminibands and produces a new band gap under the asymmetric superlattices. The velocity for the K' valley is greatly renormalized compared with the K valley, and so we can achieve a finite velocity for the K valley while the velocity for the K' valley is zero. Especially, the miniband and band gap could be manipulated independently, leading to an increase of the conductance. The characteristics of the band structure are reflected in the transmission spectra. The Dirac points and the crossing points appear as pronounced peaks in transmission. A remarkable valley polarization is obtained which is robust to the disorder and can be controlled by the strain, the period, and the voltage.
Directory of Open Access Journals (Sweden)
PANKAJ KUMAR GOSWAMI
2012-02-01
Full Text Available Microstrip patch antennas have a rapid growth of its importance in the field of wireless communication due to ease of fabrication and versatility of possible geometries. It is still being the part of development, to design a suitable antenna of high bandwidth with compact geometry for commercial applications. The purpose of thispaper is to design a compact size high bandwidth microstrip patch antenna with promising efficiency for wireless applications. A U-shape microstrip patch antenna, operating in dual band, with PBG structure is proposed. A U-shape probe feed antenna with photonic band gap structure on ground plane could be able to improvebandwidth about 32.26% in the band of frequency 1.6-2.4 GHz & about 23.75 % in the band of frequency 3.7- 4.7 GHz. The results are simulated & depicted with the help of full wave simulator IE3D V9.0.
Fang, Changming; Li, Wun Fan; Koster, Rik S.; Klimeš, Jiří; Van Blaaderen, Alfons; Van Huis, Marijn A.
2015-01-01
Knowledge about the intrinsic electronic properties of water is imperative for understanding the behaviour of aqueous solutions that are used throughout biology, chemistry, physics, and industry. The calculation of the electronic band gap of liquids is challenging, because the most accurate ab initi
1978-01-01
Various methods for calculating the transmission functions of the 15 micron CO2 band are described. The results of these methods are compared with laboratory measurements. It is found that program P4 provides the best agreement with experimental results on the average.
Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers
International Nuclear Information System (INIS)
Impact of Bi incorporation into (Ga,Mn)As layers on their electronic- and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition.
Institute of Scientific and Technical Information of China (English)
Muhammad Rashid; Fayyaz Hussain; Muhammad Imran; S A Ahmad; N A Noor; M U Sohaib; S M Alay-e-Abbas
2013-01-01
The structural,electronic,and optical properties of binary ZnO,ZnSe compounds,and their ternary ZnO1-xSex alloys are computed using the accurate full potential linearized augmented plane wave plus local orbital (FP-LAPW + lo) method in the rocksalt (B 1) and zincblende (B3) crystallographic phases.The electronic band structures,fundamental energy band gaps,and densities of states for ZnO1 xSex are evaluated in the range 0 ≤ x ≤ 1 using Wu-Cohen (WC) generalized gradient approximation (GGA) for the exchange-correlation potential.Our calculated results of lattice parameters and bulk modulus reveal a nonlinear variation for pseudo-binary and their ternary alloys in both phases and show a considerable deviation from Vegard's law.It is observed that the predicted lattice parameter and bulk modulus are in good agreement with the available experimental and theoretical data.We establish that the composition dependence of band gap is semi-metallic in B1 phase,while a direct band gap is observed in B3 phase.The calculated density of states is described by taking into account the contribution of Zn 3d,O 2p,and Se 4s,and the optical properties are studied in terms of dielectric functions,refractive index,reflectivity,and energy loss function for the B3 phase and are compared with the available experimental data.
Energy Technology Data Exchange (ETDEWEB)
Sesion Jr, P D [Escola de Ciencias e Tecnologia, Universidade Federal do Rio Grande do Norte, 59072-970 Natal, Rio Grande do Norte (Brazil); Henriques, J M [Departamento de Fisica Teorica e Experimental, Universidade Federal do Rio Grande do Norte, 59072-970 Natal, Rio Grande do Norte (Brazil); Barboza, C A; Albuquerque, E L [Departamento de Biofisica e Farmacologia, Universidade Federal do Rio Grande do Norte, 59072-900 Natal, Rio Grande do Norte (Brazil); Freire, V N [Departamento de Fisica, Universidade Federal do Ceara, 60455-970 Fortaleza, Ceara (Brazil); Caetano, E W S, E-mail: ewcaetano@gmail.co [Instituto Federal de Educacao, Ciencia e Tecnologia do Ceara, Avenida 13 de Maio, 2081, Benfica, 60040-531 Fortaleza, Ceara (Brazil)
2010-11-03
CdSnO{sub 3} ilmenite and perovskite crystals were investigated using both the local density and generalized gradient approximations, LDA and GGA, respectively, of the density functional theory (DFT). The electronic band structures, densities of states, dielectric functions, optical absorption and reflectivity spectra related to electronic transitions were obtained, as well as the infrared absorption spectra after computing the vibrational modes of the crystals at q = 0. Dielectric optical permittivities and polarizabilities at {omega} = 0 and {infinity} were also calculated. The results show that GGA-optimized geometries are more accurate than LDA ones, and the Kohn-Sham band structures obtained for the CdSnO{sub 3} polymorphs confirm that ilmenite has an indirect band gap, while perovskite has a direct band gap, both being semiconductors. Effective masses for both crystals are obtained for the first time, being highly isotropic for electrons and anisotropic for holes. The optical properties reveal a very small degree of anisotropy of both crystals with respect to different polarization planes of incident light. The phonon calculation at q = 0 for perovskite CdSnO{sub 3} does not show any imaginary frequencies, in contrast to a previous report suggesting the existence of a more stable crystal of perovskite CdSnO{sub 3} with ferroelectric properties.
QED Based Calculation of the Fine Structure Constant
Energy Technology Data Exchange (ETDEWEB)
Lestone, John Paul [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
2016-10-13
Quantum electrodynamics is complex and its associated mathematics can appear overwhelming for those not trained in this field. Here, semi-classical approaches are used to obtain a more intuitive feel for what causes electrostatics, and the anomalous magnetic moment of the electron. These intuitive arguments lead to a possible answer to the question of the nature of charge. Virtual photons, with a reduced wavelength of λ, are assumed to interact with isolated electrons with a cross section of πλ^{2}. This interaction is assumed to generate time-reversed virtual photons that are capable of seeking out and interacting with other electrons. This exchange of virtual photons between particles is assumed to generate and define the strength of electromagnetism. With the inclusion of near-field effects the model presented here gives a fine structure constant of ~1/137 and an anomalous magnetic moment of the electron of ~0.00116. These calculations support the possibility that near-field corrections are the key to understanding the numerical value of the dimensionless fine structure constant.
Brik, M. G.
2011-02-01
Detailed ab initio calculations of the structural, electronic, optical and elastic properties of two crystals - magnesite (MgCO 3) and calcite (CaCO 3) - are reported in the present paper. Both compounds are important natural minerals, playing an important role in the carbon dioxide cycling. The optimized crystal structures, band gaps, density of states diagrams, elastic constants, optical absorption spectra and refractive indexes dependence on the wavelength all have been calculated and compared, when available, with literature data. Both crystals are indirect band compounds, with calculated band gaps of 5.08 eV for MgCO 3 and 5.023 eV for CaCO 3. Both values are underestimated by approximately 1.0 eV with respect to the experimental data. Although both crystals have the same structure, substitution of Mg by Ca ions leads to certain differences, which manifest themselves in noticeable change in the electronic bands profiles and widths, shape of the calculated absorption spectra, and values of the elastic constants. Response of both crystals to the applied hydrostatic pressure was analyzed in the pressure range of phase stability, variations of the lattice parameters and characteristic interionic distances were considered. The obtained dependencies of lattice constants and calculated band gap on pressure can be used for prediction of properties of these two hosts at elevated pressures that occur in the Earth's mantle.
Appell, K C; Low, P S
1981-11-10
The cytoplasmic domain of band 3 was released from spectrin-depleted, acetic acid-stripped erythrocyte membrane vesicles by mild chymotryptic digestion. After purification by ion exchange and gel filtration chromatography, the fragment preparation was found to be greater than 90% pure on polyacrylamide disc gels in the presence of 0.2% sodium dodecyl sulfate. The subunit Mr from the electrophoretic procedure was estimated at approximately 40,000. The isolated cytoplasmic fragment ws judged to be a dimer, since (i) the unmodified fragment and its disulfide-cross-linked (dimeric) counterpart eluted in the same peak fraction from a Sephacryl S-200 gel filtration column, and (ii) the sedimentation velocity molecular weight of the native fragment was calculated to be approximately 95,000. No evidence of either larger or smaller aggregates was obtained. The frictional ratio of the fragment was measured at 1.6, suggesting a highly elongated morphology. The circular dichroism spectrum of the fragment corresponded to approximately 37% alpha helix. Titration of the cytoplasmic fragment over the physiological pH range gave rise to a reversible 2-fold increase in the intrinsic fluorescence quantum yield (lambda ex, 290 nm; lambda em, 335 nm) between pH 6 and 9. Computer analysis of the data yielded a temperature-dependent apparent pKa of 7.8 at 37 degrees C and 8.1 at 20 degrees C, both with Hill coefficients less than or equal to 1. Calorimetric experiments revealed a similar sensitivity to pH, where the denaturation temperature of the fragment titrated from 74 degrees C at pH 6 to 59 degrees C at pH 8.5, with an apparent pKa of 7.3 and a Hill coefficient less than 1. The enthalpies and widths at half-height of the transitions were also exquisitely sensitive to pH. The fluorescence and calorimetric data could all be described by the titration of a single ionizable group of apparent pKa of 7.8 at 37 degrees C and delta pKa/degrees C of -0.018. The ionization of this critical
Flexural vibration band gaps in thin plates with two-dimensional binary locally resonant structures
Institute of Scientific and Technical Information of China (English)
Yu Dian-Long; Wang Gang; Liu Yao-Zong; Wen Ji-Hong; Qiu Jing
2006-01-01
The complete flexural vibration band gaps are studied in the thin plates with two-dimensional binary locally resonant structures, i.e. the composite plate consisting of soft rubber cylindrical inclusions periodically placed in a host material. Numerical simulations show that the low-frequency gaps of flexural wave exist in the thin plates. The width of the first gap decreases monotonically as the matrix density increases. The frequency response of the finite periodic thin plates is simulated by the finite element method, which provides attenuations of over 20dB in the frequency range of the band gaps. The findings will be significant in the application of phononic crystals.
Electromagnetic wave band structure due to surface plasmon resonances in a complex plasma.
Vladimirov, S V; Ishihara, O
2016-07-01
The dielectric properties of complex plasma containing either metal or dielectric spherical inclusions (macroparticles, dust) are investigated. We focus on surface plasmon resonances on the macroparticle surfaces and their effect on electromagnetic wave propagation. It is demonstrated that the presence of surface plasmon oscillations can significantly modify plasma electromagnetic properties by resonances and cutoffs in the effective permittivity. This leads to related branches of electromagnetic waves and to the wave band gaps. The conditions necessary to observe the band-gap structure in laboratory dusty plasma and/or space (cosmic) dusty plasmas are discussed. PMID:27575225
Electromagnetic wave band structure due to surface plasmon resonances in a complex plasma
Vladimirov, S. V.; Ishihara, O.
2016-07-01
The dielectric properties of complex plasma containing either metal or dielectric spherical inclusions (macroparticles, dust) are investigated. We focus on surface plasmon resonances on the macroparticle surfaces and their effect on electromagnetic wave propagation. It is demonstrated that the presence of surface plasmon oscillations can significantly modify plasma electromagnetic properties by resonances and cutoffs in the effective permittivity. This leads to related branches of electromagnetic waves and to the wave band gaps. The conditions necessary to observe the band-gap structure in laboratory dusty plasma and/or space (cosmic) dusty plasmas are discussed.
Energy Technology Data Exchange (ETDEWEB)
Winiarski, M.J., E-mail: M.Winiarski@int.pan.wroc.pl
2014-12-15
Highlights: • Fully relativistic calculations of electronic structures of Re{sub 24}Nb{sub 5} and Re{sub 24}Ti{sub 5}. • Strong effects of antisymmetric spin–orbit coupling on band structures. • Different, multi-band Fermi surfaces obtained for both systems. • Possible intermediate coupled superconductivity in Re{sub 24}Ti{sub 5}. - Abstract: Electronic structures of superconducting Re{sub 24}Nb{sub 5} and Re{sub 24}Ti{sub 5} have been calculated employing the full-potential local-orbital method within the density functional theory. The investigations were focused on the influence of the antisymmetric spin–orbit coupling on band structures and Fermi surfaces of these non-centrosymmetric systems. The predicted here density of states at the Fermi level for Re{sub 24}Ti{sub 5} is abnormally low with respect to that deduced from previous heat capacity measurements. This discrepancy suggests an intermediate coupled superconducting state in Re{sub 24}Ti{sub 5}. The differences between electronic properties of both compounds could explain more robust superconductivity in the Nb-based material.
Kong, Bo; Zhang, Yachao
2016-07-01
The electronic structures of the cubic GdH3 are extensively investigated using the ab initio many-body GW calculations treating the Gd 4f electrons either in the core (4f-core) or in the valence states (4f-val). Different degrees of quasiparticle (QP) self-consistent calculations with the different starting points are used to correct the failures of the GGA/GGA + U/HSE03 calculations. In the 4f-core case, GGA + G0W0 calculations give a fundamental band gap of 1.72 eV, while GGA+ GW0 or GGA + GW calculations present a larger band gap. In the 4f-val case, the nonlocal exchange-correlation (xc) functional HSE03 can account much better for the strong localization of the 4f states than the semilocal or Hubbard U corrected xc functional in the Kohn-Sham equation. We show that the fundamental gap of the antiferromagnetic (AFM) or ferromagnetic (FM) GdH3 can be opened up by solving the QP equation with improved starting point of eigenvalues and wave functions given by HSE03. The HSE03 + G0W0 calculations present a fundamental band gap of 2.73 eV in the AFM configuration, and the results of the corresponding GW0 and GW calculations are 2.89 and 3.03 eV, respectively. In general, for the cubic structure, the fundamental gap from G0W0 calculations in the 4f-core case is the closest to the real result. By G0W0 calculations in the 4f-core case, we find that H or Gd defects can strongly affect the band structure, especially the H defects. We explain the mechanism in terms of the possible electron correlation on the hydrogen site. Under compression, the insulator-to-metal transition in the cubic GdH3 occurs around 40 GPa, which might be a satisfied prediction.
Energy Technology Data Exchange (ETDEWEB)
Hinsche, Nicki; Yavorski, Bogdan; Zahn, Peter; Mertig, Ingrid [Martin-Luther-Universitaet, Institut fuer Physik, Halle/S. (Germany)
2010-07-01
Starting from bulk silicon, we studied the valley splitting due to symmetry breaking that occurs in rolled-up Si. Valley splitting in Si was studied recently because of tetragonal distortion and quantum well effects in heterostructures. The new aspect in nowadays experimentally accessible rolled-up Si tubes is that symmetry breaking occurs in all spatial directions. As a result, splitting of the six-fold degenerate conduction-band minimum is expected to be lifted. This has a strong influence on the transport properties as well. In detail, the anisotropy of the effective masses of charge carriers contributing to the conductivity in different directions are studied in dependence on the applied strain. The electronic structure is calculated self consistently within the framework of density functional theory. The transport properties of the promising thermoelectric material are studied in the diffusive limit of transport applying the Boltzmann theory in relaxation time approximation.
Structural characteristic correlated to the electronic band gap in Mo S2
Chu, Shengqi; Park, Changyong; Shen, Guoyin
2016-07-01
The structural evolution with pressure in bulk Mo S2 has been investigated by high-pressure x-ray diffraction using synchrotron radiation. We found that the out-of-plane S-Mo-S bond angle θ increases and that in in-plane angle ϕ decreases linearly with increasing pressure across the known semiconducting-to-metal phase transition, whereas the Mo-S bond length and the S-Mo-S trilayer thickness display only little change. Extrapolating the experimental result along the in-plane lattice parameter with pressure, both S-Mo-S bond angles trend to those found in monolayer Mo S2 , which manifests as a structural characteristic closely correlating the electronic band gap of Mo S2 to its physical forms and phases, e.g., monolayer as direct band gap semiconductor, multilayer or bulk as indirect band gap semiconductor, and high-pressure (>19 GPa ) bulk form as metal. Combined with the effects of bond strength and van der Waals interlayer interactions, the structural correlations between the characteristic bond angle and electronic band gaps are readily extendible to other transition metal dichalcogenide systems (M X2 , where M =Mo , W and X =S , Se, Te).
Structural and electronic phase transitions of ThS2 from first-principles calculations
Guo, Yongliang; Wang, Changying; Qiu, Wujie; Ke, Xuezhi; Huai, Ping; Cheng, Cheng; Zhu, Zhiyuan; Chen, Changfeng
2016-10-01
Thorium and its compounds have received considerable attention in recent years due to the renewed interest in developing the thorium fuel cycle as an alternative nuclear energy technology. There is pressing current need to explore the physical properties essential to the fundamental understanding and practical application of these materials. Here we report on a computational study of thorium disulfide (ThS2), which plays an important role in the thorium fuel reprocessing cycle. We have employed the density functional theory and evolutionary structure search methods to determine the crystal structures, electronic band structures, phonon dispersions and density of states, and thermodynamic properties of ThS2 under various pressure and temperature conditions. Our calculations identify several crystalline phases of ThS2 and a series of structural phase transitions induced by pressure and temperature. The calculated results also reveal electronic phase transitions from the semiconducting state in the low-pressure phases of ThS2 in the P n m a and F m 3 ¯m symmetry to the metallic state in the high-pressure phases of ThS2 in the P n m a and I 4 /m m m symmetry. These results explain the experimental observation of the thermodynamic stability of the P n m a phase of ThS2 at the ambient conditions and a pressure-induced structural phase transition in ThS2 around 40 GPa. Moreover, the present study reveals considerable additional information on the structural and electronic properties of ThS2 in a wide range of pressure and temperature. Such information provides key insights into the fundamental material behavior and the underlying mechanisms that lay the foundation for further exploration and application of ThS2.
Band structures of carbon nanotube with spin-orbit coupling interaction
Energy Technology Data Exchange (ETDEWEB)
Liu Hong, E-mail: liuhong3@njnu.edu.c [Physics Department, Nanjing Normal University, Nanjing 210046 (China)
2011-01-01
We explore the band structures of single-walled carbon nanotubes (SWCNTs) with two types of spin-orbit couplings. The obtained results indicate that weak Rashba spin-orbit coupling interaction can lead to the breaking of four-fold degeneracy in all tubes even though without the intrinsic SO coupling. The asymmetric splitting between conduction bands and valence bands is caused by both SO couplings at the same time. When the ratio of Rashba spin-orbit coupling to the intrinsic spin-orbit coupling is larger than 3, metallic zigzag nanotube is always metallic conductor, on the contrary it becomes semiconducting properties. However, only when this ratio is equal to about 3 or the intrinsic spin-orbit coupling is much weak, the metallic armchair nanotube still holds the metallic behavior in transport.
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying
DEFF Research Database (Denmark)
Canulescu, Stela; Rechendorff, K.; Borca, C. N.;
2014-01-01
The band structure of pure and Ti-alloyed anodic aluminum oxide has been examined as a function of Ti concentration varying from 2 to 20 at. %. The band gap energy of Ti-alloyed anodic Al oxide decreases with increasing Ti concentration. X-ray absorption spectroscopy reveals that Ti atoms...... are not located in a TiO2 unit in the oxide layer, but rather in a mixed Ti-Al oxide layer. The optical band gap energy of the anodic oxide layers was determined by vacuum ultraviolet spectroscopy in the energy range from 4.1 to 9.2 eV (300–135 nm). The results indicate that amorphous anodic Al2O3 has a direct...
NUMERICAL CALCULATIONS IN GEOMECHANICS APPLICABLE TO LINEAR STRUCTURES
Directory of Open Access Journals (Sweden)
Vlasov Aleksandr Nikolaevich
2012-10-01
Full Text Available The article covers the problem of applicability of finite-element and engineering methods to the development of a model of interaction between pipeline structures and the environment in the complex conditions with a view to the simulation and projection of exogenous geological processes, trustworthy assessment of their impacts on the pipeline, and the testing of varied calculation methodologies. Pipelining in the areas that have a severe continental climate and permafrost soils is accompanied by cryogenic and exogenous processes and developments. It may also involve the development of karst and/or thermokarst. The adverse effect of the natural environment is intensified by the anthropogenic impact produced onto the natural state of the area, causing destruction of forests and other vegetation, changing the ratio of soils in the course of the site planning, changing the conditions that impact the surface and underground waters, and causing the thawing of the bedding in the course of the energy carrier pumping, etc. The aforementioned consequences are not covered by effective regulatory documents. The latter constitute general and incomplete recommendations in this respect. The appropriate mathematical description of physical processes in complex heterogeneous environments is a separate task to be addressed. The failure to consider the above consequences has repeatedly caused both minor damages (denudation of the pipeline, insulation stripping and substantial accidents; the rectification of their consequences was utterly expensive. Pipelining produces a thermal impact on the environment; it may alter the mechanical properties of soils and de-frost the clay. The stress of the pipeline is one of the principal factors that determines its strength and safety. The pipeline stress exposure caused by loads and impacts (self-weight, internal pressure, etc. may be calculated in advance, and the accuracy of these calculations is sufficient for practical
Lee, Joohwi; Seko, Atsuto; Shitara, Kazuki; Nakayama, Keita; Tanaka, Isao
2016-03-01
Machine learning techniques are applied to make prediction models of the G0W0 band gaps for 270 inorganic compounds using Kohn-Sham (KS) band gaps, cohesive energy, crystalline volume per atom, and other fundamental information of constituent elements as predictors. Ordinary least squares regression (OLSR), least absolute shrinkage and selection operator, and nonlinear support vector regression (SVR) methods are applied with two levels of predictor sets. When the KS band gap by generalized gradient approximation of Perdew-Burke-Ernzerhof (PBE) or modified Becke-Johnson (mBJ) is used as a single predictor, the OLSR model predicts the G0W0 band gap of randomly selected test data with the root-mean-square error (RMSE) of 0.59 eV. When KS band gap by PBE and mBJ methods are used together with a set of predictors representing constituent elements and compounds, the RMSE decreases significantly. The best model by SVR yields the RMSE of 0.24 eV. Band gaps estimated in this way should be useful as predictors for virtual screening of a large set of materials.
Band offsets and electronic structures of interface between In{sub 0.5}Ga{sub 0.5}As and InP
Energy Technology Data Exchange (ETDEWEB)
Cai, Genwang [School of Physical Science and Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhengzhou University, Zhengzhou 450052 (China); College of Science, Henan University of Technology, Zhengzhou 450001 (China); Wang, Changhong; Wang, Weichao [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Liang, Erjun, E-mail: ejliang@zzu.edu.cn [School of Physical Science and Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhengzhou University, Zhengzhou 450052 (China)
2016-02-07
III–V semiconductor interfacing with high-κ gate oxide is crucial for the high mobility metal-oxide-semiconductor field transistor device. With density functional theory calculations, we explored the band offsets and electronic structures of the In{sub 0.5}Ga{sub 0.5}As/InP interfaces with various interfacial bondings. Among six different bonding interfaces, we found that P-In(Ga) bonding interface showed the highest stability. Local density of states calculations was adopted to calculate the band offsets. Except for the metallic interface, we noticed that neither valence band offset nor conduction band offset depended on the interfacial bondings. For the most stable P-In(Ga) interface, we did not observe any gap states. Furthermore, we explored the P-In(Ga) interfaces with interfacial P-As exchange defects, which slightly modified the interface stability and the band offsets but did not produce any gap states. These findings provide solid evidence that InP could serve as a promising interfacial passivation layer between III–V material and high-κ oxide in the application of high mobility devices.
Band offsets and electronic structures of interface between In0.5Ga0.5As and InP
International Nuclear Information System (INIS)
III–V semiconductor interfacing with high-κ gate oxide is crucial for the high mobility metal-oxide-semiconductor field transistor device. With density functional theory calculations, we explored the band offsets and electronic structures of the In0.5Ga0.5As/InP interfaces with various interfacial bondings. Among six different bonding interfaces, we found that P-In(Ga) bonding interface showed the highest stability. Local density of states calculations was adopted to calculate the band offsets. Except for the metallic interface, we noticed that neither valence band offset nor conduction band offset depended on the interfacial bondings. For the most stable P-In(Ga) interface, we did not observe any gap states. Furthermore, we explored the P-In(Ga) interfaces with interfacial P-As exchange defects, which slightly modified the interface stability and the band offsets but did not produce any gap states. These findings provide solid evidence that InP could serve as a promising interfacial passivation layer between III–V material and high-κ oxide in the application of high mobility devices
Experimental Studies Of W-band Accelerator Structures At High Field
Hill, M E
2001-01-01
A high-gradient electron accelerator is desired for high- energy physics research, where frequency scalings of breakdown and trapping of itinerant beamline particles dictates operation of the accelerator at short wavelengths. The first results of design and test of a high-gradient mm-wave linac with an operating frequency at 91.392 GHz (W-band) are presented. A novel approach to particle acceleration is presented employing a planar, dielectric lined waveguide used for particle acceleration. The traveling wave fields in the planar dielectric accelerator (PDA) are analyzed for an idealized structure, along with a circuit equivalent model used for understanding the structure as a microwave circuit. Along with the W-band accelerator structures, other components designed and tested are high power rf windows, high power attenuators, and a high power squeeze-type phase shifter. The design of the accelerator and its components where eased with the aide of numerical simulations using a finite-difference electromagneti...
Robust topology optimization of three-dimensional photonic-crystal band-gap structures
Men, Han; Freund, Robert M; Peraire, Jaime; Johnson, Steven G
2014-01-01
We perform full 3D topology optimization (in which "every voxel" of the unit cell is a degree of freedom) of photonic-crystal structures in order to find optimal omnidirectional band gaps for various symmetry groups, including fcc (including diamond), bcc, and simple-cubic lattices. Even without imposing the constraints of any fabrication process, the resulting optimal gaps are only slightly larger than previous hand designs, suggesting that current photonic crystals are nearly optimal in this respect. However, optimization can discover new structures, e.g. a new fcc structure with the same symmetry but slightly larger gap than the well known inverse opal, which may offer new degrees of freedom to future fabrication technologies. Furthermore, our band-gap optimization is an illustration of a computational approach to 3D dispersion engineering which is applicable to many other problems in optics, based on a novel semidefinite-program formulation for nonconvex eigenvalue optimization combined with other techniq...
Dang, Hung T; Mravlje, Jernej; Georges, Antoine; Millis, Andrew J
2015-09-01
Density functional plus dynamical mean field calculations are used to show that in transition metal oxides, rotational and tilting (GdFeO(3)-type) distortions of the ideal cubic perovskite structure produce a multiplicity of low-energy optical transitions which affect the conductivity down to frequencies of the order of 1 or 2 mV (terahertz regime), mimicking non-Fermi-liquid effects even in systems with a strictly Fermi-liquid self-energy. For CaRuO(3), a material whose measured electromagnetic response in the terahertz frequency regime has been interpreted as evidence for non-Fermi-liquid physics, the combination of these band structure effects and a renormalized Fermi-liquid self-energy accounts for the low frequency optical response which had previously been regarded as a signature of exotic physics. Signatures of deviations from Fermi-liquid behavior at higher frequencies (∼100 meV) are discussed. PMID:26382698
Engineered band structure for an enhanced performance on quantum dot-sensitized solar cells
Jin, Bin Bin; Wang, Ye Feng; Wei, Dong; Cui, Bin; Chen, Yu; Zeng, Jing Hui
2016-06-01
A photon-to-current efficiency of 2.93% is received for the Mn-doped CdS (MCdS)-quantum dot sensitized solar cells (QDSSCs) using Mn:ZnO (MZnO) nanowire as photoanode. Hydrothermal synthesized MZnO are spin-coated on fluorine doped tin oxide (FTO) glass with P25 paste to serve as photoanode after calcinations. MCdS was deposited on the MZnO film by the successive ionic layer adsorption and reaction method. The long lived excitation energy state of Mn2+ is located inside the conduction band in the wide bandgap ZnO and under the conduction band of CdS, which increases the energetic overlap of donor and acceptor states, reducing the "loss-in-potential," inhibiting charge recombination, and accelerating electron injection. The engineered band structure is well reflected by the electrochemical band detected using cyclic voltammetry. Cell performances are evidenced by current density-voltage (J-V) traces, diffuse reflectance spectra, transient PL spectroscopy, and incident photon to current conversion efficiency characterizations. Further coating of CdSe on MZnO/MCdS electrode expands the light absorption band of the sensitizer, an efficiency of 4.94% is received for QDSSCs.
Multi-instrument observations of the electric and magnetic field structure of omega bands
Directory of Open Access Journals (Sweden)
J. A. Wild
Full Text Available High time resolution data from the CUTLASS Finland radar during the interval 01:30-03:30 UT on 11 May, 1998, are employed to characterise the ionospheric electric field due to a series of omega bands extending ~5° in latitude at a resolution of 45 km in the meridional direction and 50 km in the azimuthal direction. E-region observations from the STARE Norway VHF radar operating at a resolution of 15 km over a comparable region are also incorporated. These data are combined with ground magnetometer observations from several stations. This allows the study of the ionospheric equivalent current signatures and height integrated ionospheric conductances associated with omega bands as they propagate through the field-of-view of the CUTLASS and STARE radars. The high-time resolution and multi-point nature of the observations leads to a refinement of the previous models of omega band structure. The omega bands observed during this interval have scale sizes ~500 km and an eastward propagation velocity ~0.75 km s^{-1}. They occur in the morning sector (~05 MLT, simultaneously with the onset/intensification of a substorm to the west during the recovery phase of a previous substorm in the Scandinavian sector. A possible mechanism for omega band formation and their relationship to the substorm phase is discussed..
Key words. Ionosphere (auroral ionosphere; electric fields and currents · Magnetospheric physics (magnetosphere-ionosphere interactions
Large-scale shell model calculations for structure of Ni and Cu isotopes
Tsunoda, Yusuke; Otsuka, Takaharu; Shimizu, Noritaka; Honma, Michio; Utsuno, Yutaka
2014-09-01
We study nuclear structure of Ni and Cu isotopes, especially neutron-rich ones in the N ~ 40 region by Monte Carlo shell model (MCSM) calculations in pfg9d5 model space (0f7 / 2 , 1p3 / 2 , 0f5 / 2 , 1p1 / 2 , 0g9 / 2 , 1d5 / 2). Effects of excitation across N = 40 and other gaps are important to describe properties such as deformation, and we include this effects by using the pfg9d5 model space. We can calculate in this large model space without any truncation, as an advantage of MCSM. In the MCSM, a wave function is represented as a linear combination of angular-momentum- and parity-projected deformed Slater determinants. We can study intrinsic shapes of nuclei by using quadrupole deformations of MCSM basis states before projection. In doubly-magic 68Ni, there are oblate and prolate deformed bands as well as the spherical ground state from the calculation. Such shape coexistence can be explained by introducing the mechanism called Type II shell evolution, driven by changes of configurations within the same nucleus mainly due to the tensor force.
Consensus structure elucidation combining GC/EI-MS, structure generation, and calculated properties.
Schymanski, Emma L; Gallampois, Christine M J; Krauss, Martin; Meringer, Markus; Neumann, Steffen; Schulze, Tobias; Wolf, Sebastian; Brack, Werner
2012-04-01
This article explores consensus structure elucidation on the basis of GC/EI-MS, structure generation, and calculated properties for unknown compounds. Candidate structures were generated using the molecular formula and substructure information obtained from GC/EI-MS spectra. Calculated properties were then used to score candidates according to a consensus approach, rather than filtering or exclusion. Two mass spectral match calculations (MOLGEN-MS and MetFrag), retention behavior (Lee retention index/boiling point correlation, NIST Kovat's retention index), octanol-water partitioning behavior (log K(ow)), and finally steric energy calculations were used to select candidates. A simple consensus scoring function was developed and tested on two unknown spectra detected in a mutagenic subfraction of a water sample from the Elbe River using GC/EI-MS. The top candidates proposed using the consensus scoring technique were purchased and confirmed analytically using GC/EI-MS and LC/MS/MS. Although the compounds identified were not responsible for the sample mutagenicity, the structure-generation-based identification for GC/EI-MS using calculated properties and consensus scoring was demonstrated to be applicable to real-world unknowns and suggests that the development of a similar strategy for multidimensional high-resolution MS could improve the outcomes of environmental and metabolomics studies. PMID:22414024
Naumov, P.; Barkalov, O.; Mirhosseini, H.; Felser, C.; Medvedev, S. A.
2016-09-01
Non-trivial electronic properties of silver telluride and other chalcogenides, such as the presence of a topological insulator state, electronic topological transitions, metallization, and the possible emergence of superconductivity under pressure have attracted attention in recent years. In this work, we studied the electronic properties of silver selenide (Ag2Se). We performed direct current electrical resistivity measurements, in situ Raman spectroscopy, and synchrotron x-ray diffraction accompanied by ab initio calculations to explore pressure-induced changes to the atomic and electronic structure of Ag2Se. The temperature dependence of the electrical resistivity was measured up to 30 GPa in the 4-300 K temperature interval. Resistivity data showed an unusual increase in the thermal energy gap of phase I, which is a semiconductor under ambient conditions. Recently, a similar effect was reported for the 3D topological insulator Bi2Se3. Raman spectroscopy studies revealed lattice instability in phase I indicated by the softening of observed vibrational modes with pressure. Our hybrid functional band structure calculations predicted that phase I of Ag2Se would be a narrow band gap semiconductor, in accordance with experimental results. At a pressure of ~7.5 GPa, Ag2Se underwent a structural transition to phase II with an orthorhombic Pnma structure. The temperature dependence of the resistivity of Ag2Se phase II demonstrated its metallic character. Ag2Se phase III, which is stable above 16.5 GPa, is also metallic according to the resistivity data. No indication of the superconducting transition is found above 4 K in the studied pressure range.
Naumov, P.; Barkalov, O.; Mirhosseini, H.; Felser, C.; Medvedev, S. A.
2016-09-01
Non-trivial electronic properties of silver telluride and other chalcogenides, such as the presence of a topological insulator state, electronic topological transitions, metallization, and the possible emergence of superconductivity under pressure have attracted attention in recent years. In this work, we studied the electronic properties of silver selenide (Ag2Se). We performed direct current electrical resistivity measurements, in situ Raman spectroscopy, and synchrotron x-ray diffraction accompanied by ab initio calculations to explore pressure-induced changes to the atomic and electronic structure of Ag2Se. The temperature dependence of the electrical resistivity was measured up to 30 GPa in the 4–300 K temperature interval. Resistivity data showed an unusual increase in the thermal energy gap of phase I, which is a semiconductor under ambient conditions. Recently, a similar effect was reported for the 3D topological insulator Bi2Se3. Raman spectroscopy studies revealed lattice instability in phase I indicated by the softening of observed vibrational modes with pressure. Our hybrid functional band structure calculations predicted that phase I of Ag2Se would be a narrow band gap semiconductor, in accordance with experimental results. At a pressure of ~7.5 GPa, Ag2Se underwent a structural transition to phase II with an orthorhombic Pnma structure. The temperature dependence of the resistivity of Ag2Se phase II demonstrated its metallic character. Ag2Se phase III, which is stable above 16.5 GPa, is also metallic according to the resistivity data. No indication of the superconducting transition is found above 4 K in the studied pressure range.
Band structure in {sup 79}Y and the question of T=0 pairing
Energy Technology Data Exchange (ETDEWEB)
Paul, S.D.; Baktash, C.; Gross, C.J.; Galindo-Uribarri, A.; Radford, D.C.; Rudolph, D.; Rykaczewski, K.; Shapira, D.; Toth, K.S.; Yu, C.H. [Physics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Satula, W. [Joint Institute of Heavy Ion Research, Oak Ridge, Tennessee 37831 (United States); Satula, W.; Reviol, W.; Riedinger, L.L.; Weintraub, W. [Department of Physics, University of Tennessee, Knoxville, Tennessee 37996 (United States); Satula, W. [Institute of Theoretical Physics, Warsaw University, PL-00681 Warsaw (Poland); Gross, C.J. [Oak Ridge Institute for Science and Education, Oak Ridge, Tennessee 37831 (United States); Birriel, I.; Saladin, J.X.; Winchell, D.F.; Wood, V.Q. [Department of Physics, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States); Clark, R.M.; Fallon, P.; Lee, I.Y.; Macchiavelli, A.O. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Cunningham, R.A.; Kay, J.; Leyland, C.; Metcalfe, S.J. [CCLRC, Daresbury Laboratory, Warrington WA4 4AD (United Kingdom); Devlin, M.; Lafosse, D.R.; Lerma, F.; Sarantites, D.G. [Chemistry Department, Washington University, St. Louis, Missouri 63130 (United States); Ginter, T. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); MacDonald, B.D. [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Piechaczek, A. [Department of Physics, Louisiana State University, Baton Rouge, Louisiana 70803 (United States); Sylvan, G.N.; Tabor, S.L. [Florida State University, Tallahassee, Florida 32306 (United States); Wyss, R. [The Royal Institute of Technology, Physics Department Frescati, S-104 05 Stockholm (Sweden)
1998-12-01
Gamma rays in the N=Z+1 nucleus {sup 79}Y were identified using the reaction {sup 28}Si({sup 54}Fe,thinspp2n){sup 79}Y at a 200 MeV beam energy and an experimental setup consisting of an array of Ge detectors and the Recoil Mass Spectrometer at Oak Ridge National Laboratory. With the help of additional {gamma}-{gamma} coincidence data obtained with Gammasphere, these {gamma} rays were found to form a strongly coupled rotational band with rigid-rotor-like behavior. Results of conventional Nilsson-Strutinsky cranked shell model calculations, which predict a deformation of {beta}{sub 2}{approximately}0.4, are in excellent agreement with the properties of this band. Similar calculations for the neighboring N=Z and N=Z+1 nuclei are also in good agreement with experimental data. This suggests that the presence of the putative T=0 neutron-proton pairing does not significantly affect such simple observables as the moments of inertia of these bands at low spins. {copyright} {ital 1998} {ital The American Physical Society}
Institute of Scientific and Technical Information of China (English)
徐怡庄; 陶靖; 许振华; 翁诗甫; 徐建平; 吴瑾光; 徐端夫; 徐光宪
1999-01-01
The discrepancies of the spectral behavior for the C-H stretching band between some long chain hydrocarbon compounds and steroids were investigated. At low temperature, the C-H stretching bands exhibit complex fine structure in steroids but remain simple in long chain hydrocarbon compounds. MM3 molecular mechanics calculation indicates that, for long chain hydrocarbon compounds, the C-H groups vibrate with large scale coupling. There exist a few bands where the C-H groups vibrate in synchronous and inphase mode. Thus the variations of dipole moment for these bands are enhanced and the intensities are obviously stronger than others and cover other band in the spectra. This is just the reason why the C-H stretching bands are simple even at low temperature environment. Nevertheless, for the steroids, the C-H stretching bands vibrate with local coupling mode. The synchronous enhancement effect does not occur, the differences of intensities for various modes are not as large as those in long chain hydrocarbo
Liu, Ming-Yang; Huang, Yang; Chen, Qing-Yuan; Cao, Chao; He, Yao
2016-07-01
We study the equilibrium geometry and electronic structure of alloyed and doped arsenene sheets based on the density functional theory calculations. AsN, AsP and SbAs alloys possess indirect band gap and BiAs is direct band gap. Although AsP, SbAs and BiAs alloyed arsenene sheets maintain the semiconducting character of pure arsenene, they have indirect-direct and semiconducting-metallic transitions by applying biaxial strain. We find that B- and N-doped arsenene render p-type semiconducting character, while C- and O-doped arsenene are metallic character. Especially, the C-doped arsenene is spin-polarization asymmetric and can be tuned into the bipolar spin-gapless semiconductor by the external electric field. Moreover, the doping concentration can effectively affect the magnetism of the C-doped system. Finally, we briefly study the chemical molecule adsorbed arsenene. Our results may be valuable for alloyed and doped arsenene sheets applications in mechanical sensors and spintronic devices in the future.
Liu, Ming-Yang; Huang, Yang; Chen, Qing-Yuan; Cao, Chao; He, Yao
2016-01-01
We study the equilibrium geometry and electronic structure of alloyed and doped arsenene sheets based on the density functional theory calculations. AsN, AsP and SbAs alloys possess indirect band gap and BiAs is direct band gap. Although AsP, SbAs and BiAs alloyed arsenene sheets maintain the semiconducting character of pure arsenene, they have indirect-direct and semiconducting-metallic transitions by applying biaxial strain. We find that B- and N-doped arsenene render p-type semiconducting character, while C- and O-doped arsenene are metallic character. Especially, the C-doped arsenene is spin-polarization asymmetric and can be tuned into the bipolar spin-gapless semiconductor by the external electric field. Moreover, the doping concentration can effectively affect the magnetism of the C-doped system. Finally, we briefly study the chemical molecule adsorbed arsenene. Our results may be valuable for alloyed and doped arsenene sheets applications in mechanical sensors and spintronic devices in the future. PMID:27373712
Izuani Che Rosid, N. A.; Ahmadi, M. T.; Ismail, Razali
2016-09-01
The effect of tensile uniaxial strain on the non-parabolic electronic band structure of armchair graphene nanoribbon (AGNR) is investigated. In addition, the density of states and the carrier statistic based on the tight-binding Hamiltonian are modeled analytically. It is found that the property of AGNR in the non-parabolic band region is varied by the strain. The tunable energy band gap in AGNR upon strain at the minimum energy is described for each of n-AGNR families in the non-parabolic approximation. The behavior of AGNR in the presence of strain is attributed to the breakable AGNR electronic band structure, which varies the physical properties from its normality. The linear relation between the energy gap and the electrical properties is featured to further explain the characteristic of the deformed AGNR upon strain. Project supported by the Ministry of Higher Education (MOHE), Malaysia under the Fundamental Research Grant Scheme (FRGS) (Grant No.Q.J130000.7823.4F477). We also thank the Research Management Center (RMC) of Universiti Teknologi Malaysia (UTM) for providing an excellent research environment.
Triaxial projected shell model description of high-spin band-structures in {sup 103,105}Rh isotopes
Energy Technology Data Exchange (ETDEWEB)
Bhat, G.H. [Department of Physics, University of Kashmir, Srinagar 190 006 (India); Sheikh, J.A., E-mail: sjaphysics@gmail.com [Department of Physics, University of Kashmir, Srinagar 190 006 (India); Department of Physics and Astronomy, University of Tennessee, Knoxville, TN 37996 (United States); Dar, W.A. [Department of Physics, University of Kashmir, Srinagar 190 006 (India); Jehangir, S. [Department of Physics, University of Kashmir, Srinagar 190 006 (India); Department of Physics, National Institute of Technology, Srinagar 190 006 (India); Palit, R., E-mail: palit@tifr.res.in [Department of Nuclear and Atomic Physics, Tata Institute of Fundamental Research, Colaba, Mumbai (India); Ganai, P.A. [Department of Physics, University of Kashmir, Srinagar 190 006 (India); Department of Physics, National Institute of Technology, Srinagar 190 006 (India)
2014-11-10
High-spin band structures in odd-proton {sup 103,105}Rh are investigated using the microscopic triaxial projected shell model approach. It is demonstrated that the observed band structures built on one- and three-quasiparticle states are reproduced reasonably well in the present work. Further, it is evident from the analysis of the projected wavefunctions that side-band in the low-spin regime is the normal γ-band built on the ground-state configuration. However, in the high-spin regime, the side band is shown to be highly mixed and ceases to be a γ-band. We provide a complete set of electromagnetic transition probabilities for the two bands and the experimental measurements are desirable to test the predictions of the present work.
Arai, Masao; Hatsugai, Yasuhiro
2011-12-01
The electronic structure of periodic lattice under uniform magnetic field was studied numerically for multi-band tight-binding models with non-orthogonal basis sets. When magnetic translational symmetry is fully taken into account, computational time can be greatly reduced. Quantized Hall conductance was evaluated by robust multi-band formulation of Chern number. We found that calculated quantized Hall conductance coincides with the semi-classical results. Discontinuous jumps of Hall conductance occur at van-Hove singularities and correspond to mod q ambiguity of the Diophantine equation of Chern number.
Design of C-band 50 MW klystron with traveling wave output structure
International Nuclear Information System (INIS)
This paper presents the simulation study of a C-band 50 MW klystron with disc-loaded waveguide traveling wave output structure. The electron gun with a perveance of 1.53 μP is designed. The gun has a voltage gradient lower than 22.1 kV/mm and a cathode load current lower than 6.3 A/cm2. The beam focusing system is a space-charge balanced flow type with solenoid magnet structure and the focusing beam trajectories have a good laminar condition. A single gap cavity is adopted instead of the traveling wave output structure in the initial beam-wave interaction simulation to decide the parameters of the cavities except the output structure. A C-band disc-loaded waveguide output structure working at π/2 mode is designed and the dispersion and interaction impedance of the structure are determined by the CST code. The beam-wave interaction system with disc-loaded waveguide output structure is simulated by a three-dimensional PIC code. More than 50 MW output power is obtained. The efficiency is more than 45% and the saturate gain is more than 50 dB. The voltage gradient of the disc-loaded waveguide output structure is 30 percent less than that of the single gap cavity and there is an increase of 4% in efficiency above that of the single gap cavity. (authors)
Energy Technology Data Exchange (ETDEWEB)
Li, Ji-Hong [Sichuan Univ., Chengdu (China). Inst. of Atomic and Molecular Physics; Longdong Univ., Qingyang (China). College of Physics and Electronic Engineering; Zhu, Xu-Hui [Sichuan Univ., Chengdu (China). Inst. of Atomic and Molecular Physics; Cheng, Yan [Sichuan Univ., Chengdu (China). Inst. of Atomic and Molecular Physics; Sichuan Univ., Chengdu (China). Key Laboratory of High Energy Density Physics and Technology of Ministry of Education; Ji, Guang-Fu [Chinese Academy of Engineering Physics, Mianyang (China). National Key Laboratory of Shock Wave and Detonation Physics
2015-07-01
Based on the first-principles density functional theory calculations combined with the quasi-harmonic Debye model, the pressure dependencies of the structural, elastic, electronic and thermal properties of Li{sub 2}AgSb were systematically investigated. The calculated lattice parameters and unit cell volume of Li{sub 2}AgSb at the ground state were in good agreement with the available experimental data. The obtained elastic constants, the bulk modulus and the shear modulus revealed that Li{sub 2}AgSb is mechanically stable and behaves in a ductile manner under the applied pressure. The elasticity-relevant properties, the Young's modulus and the Poisson's ratio showed that pressure can enhance the stiffness of Li{sub 2}AgSb and that Li{sub 2}AgSb is mechanically stable up to 20 GPa. The characteristics of the band structure and the partial density of states of Li{sub 2}AgSb were analysed, showing that Li{sub 2}AgSb is a semiconductor with a direct band gap of 217 meV at 0 GPa and that the increasing pressure can make the band structure of Li{sub 2}AgSb become an indirect one. Studies have shown that, unlike temperature, pressure has little effect on the heat capacity and the thermal expansion coefficient of Li{sub 2}AgSb.
Two-dimensional microwave band-gap structures of different dielectric materials
Indian Academy of Sciences (India)
E D V Nagesh; G Santosh Babu; V Subramanian; V Sivasubramanian; V R K Murthy
2005-12-01
We report the use of low dielectric constant materials to form two-dimensional microwave band-gap structures for achieving high gap-to-midgap ratio. The variable parameters chosen are the lattice spacing and the geometric structure. The selected geometries are square and triangular and the materials chosen are PTFE ( = 2.1), PVC ( = 2.38) and glass ( = 5.5). Using the plane-wave expansion method, proper lattice spacing is selected for each structure and material. The observed experimental results are analyzed with the help of the theoretical prediction.
Zhang, Jiayong; Zhang, Hongwu; Ye, Hongfei; Zheng, Yonggang
2016-09-01
A free-end adaptive nudged elastic band (FEA-NEB) method is presented for finding transition states on minimum energy paths, where the energy barrier is very narrow compared to the whole paths. The previously proposed free-end nudged elastic band method may suffer from convergence problems because of the kinks arising on the elastic band if the initial elastic band is far from the minimum energy path and weak springs are adopted. We analyze the origin of the formation of kinks and present an improved free-end algorithm to avoid the convergence problem. Moreover, by coupling the improved free-end algorithm and an adaptive strategy, we develop a FEA-NEB method to accurately locate the transition state with the elastic band cut off repeatedly and the density of images near the transition state increased. Several representative numerical examples, including the dislocation nucleation in a penta-twinned nanowire, the twin boundary migration under a shear stress, and the cross-slip of screw dislocation in face-centered cubic metals, are investigated by using the FEA-NEB method. Numerical results demonstrate both the stability and efficiency of the proposed method. PMID:27608986
Kumar, A.; Ahluwalia, P. K.
2012-06-01
We report first principles calculations of the electronic structure of monolayer 1H-MX2 (M = Mo, W; X = S, Se, Te), using the pseudopotential and numerical atomic orbital basis sets based methods within the local density approximation. Electronic band structure and density of states calculations found that the states around the Fermi energy are mainly due to metal d states. From partial density of states we find a strong hybridisation between metal d and chalcogen p states below the Fermi energy. All studied compounds in this work have emerged as new direct band gap semiconductors. The electronic band gap is found to decrease as one goes from sulphides to the tellurides of both Mo and W. Reducing the slab thickness systematically from bulk to monolayers causes a blue shift in the band gap energies, resulting in tunability of the electronic band gap. The magnitudes of the blue shift in the band gap energies are found to be 1.14 eV, 1.16 eV, 0.78 eV, 0.64, 0.57 eV and 0.37 eV for MoS2, WS2, MoSe2, WSe2, MoTe2 and WTe2, respectively, as we go from bulk phase (indirect band gap) to monolayer limit (direct band gap). This tunability in the electronic band gap and transitions from indirect to direct band make these materials potential candidates for the fabrication of optoelectronic devices.
Experimental studies of W-band accelerator structures at high field
Hill, Marc Edward
2001-06-01
A high-gradient electron accelerator is desired for high- energy physics research, where frequency scalings of breakdown and trapping of itinerant beamline particles dictates operation of the accelerator at short wavelengths. The first results of design and test of a high-gradient mm-wave linac with an operating frequency at 91.392 GHz (W-band) are presented. A novel approach to particle acceleration is presented employing a planar, dielectric lined waveguide used for particle acceleration. The traveling wave fields in the planar dielectric accelerator (PDA) are analyzed for an idealized structure, along with a circuit equivalent model used for understanding the structure as a microwave circuit. Along with the W-band accelerator structures, other components designed and tested are high power rf windows, high power attenuators, and a high power squeeze-type phase shifter. The design of the accelerator and its components where eased with the aide of numerical simulations using a finite-difference electromagnetic field solver. Manufacturing considerations of the small, delicate mm-wave components and the steps taken to reach a robust fabrication process are detailed. These devices were characterized under low power using a two-port vector network analyzer to verify tune and match, including measurements of the structures' fields using a bead-pull. The measurements are compared with theory throughout. Addition studies of the W-band structures were performed under high power utilizing a 11.424 GHz electron linac as a current source. Test results include W-band power levels of 200 kW, corresponding to fields in the PDA of over 20 MV/m, higher than any collider. Also presented are the first measurements of the quadrapole component of the monopole accelerating field.
Energy Technology Data Exchange (ETDEWEB)
Piasecki, M., E-mail: m.piasecki@ajd.czest.pl [Institute of Physics, Jan Dlugosz University, Armii Krajowej 13/15, 42-200 Czestochowa (Poland); Brik, M.G. [College of Sciences, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China); Institute of Physics, University of Tartu, Ravila 14C, Tartu 50411 (Estonia); Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Kityk, I.V. [Faculty of Electrical Engineering, Czestochowa University of Technology, Armii Krajowej 17, 42-200 Czestochowa (Poland)
2015-08-01
A novel infrared optoelectronic material Tl{sub 4}CdI{sub 6} was studied using the density functional theory (DFT)-based techniques. Its structural, electronic, optical and elastic properties were all calculated in the generalized gradient approximation (GGA) with the Perdew–Burke–Ernzerhof (PBE) and the local density approximation (LDA) with the Ceperley-Alder–Perdew-Zunger (CA–PZ) functionals. The studied material is a direct band gap semiconductor with the calculated band gaps of 2.043 eV (GGA) and 1.627 eV (LDA). The wavelength dependence of the refractive index was fitted to the Sellmeier equation in the spectral range from 400 to 2000 nm. Good agreement between the GGA-calculated values of refractive index and experimental data was achieved. To the best of our knowledge, this is the first consistent theoretical description of the title compound, which includes calculations and analysis of the structural, electronic, optical and elastic properties. - Graphical abstract: Display Omitted - Highlights: • Infrared optoelectronic material Tl{sub 4}CdI{sub 6} was studied using ab initio methods. • Structural, electronic, optical and elastic properties were calculated. • Independent components of the elastic constants tensor were calculated. • Good agreement with available experimental results was achieved.
Band structure of topological insulators from noise measurements in tunnel junctions
International Nuclear Information System (INIS)
The unique properties of spin-polarized surface or edge states in topological insulators (TIs) make these quantum coherent systems interesting from the point of view of both fundamental physics and their implementation in low power spintronic devices. Here we present such a study in TIs, through tunneling and noise spectroscopy utilizing TI/Al2O3/Co tunnel junctions with bottom TI electrodes of either Bi2Te3 or Bi2Se3. We demonstrate that features related to the band structure of the TI materials show up in the tunneling conductance and even more clearly through low frequency noise measurements. The bias dependence of 1/f noise reveals peaks at specific energies corresponding to band structure features of the TI. TI tunnel junctions could thus simplify the study of the properties of such quantum coherent systems that can further lead to the manipulation of their spin-polarized properties for technological purposes
Impact of the electronic band structure in high-harmonic generation spectra of solids
Tancogne-Dejean, Nicolas; Kärtner, Franz X; Rubio, Angel
2016-01-01
An accurate analytic model describing high-harmonic generation (HHG) in solids is derived. Extensive first-principles simulations within a time-dependent density-functional framework corroborate the conclusions of the model. Our results reveal that: (i) the emitted HHG spectra are highly anisotropic and laser-polarization dependent even for cubic crystals, (ii) the harmonic emission is enhanced by the inhomogeneity of the electron-nuclei potential, the yield is increased for heavier atoms, and (iii) the cutoff photon energy is driver-wavelength independent. Moreover, we show that it is possible to predict the laser polarization for optimal HHG in bulk crystals solely from the knowledge of their electronic band structure. Our results pave the way to better control and optimize HHG in solids by engineering their band structure.
Growth, Band Structure and Optical Properties of LiSrBO3 Crystal
Institute of Scientific and Technical Information of China (English)
无
2007-01-01
The bulk crystal of LiSrBO3(8.39 g) with a size of 21mm × 20mm × 15mm was grown by high temperature solution growth method. The relationship between growth habit and crystal structure was discussed. The transmission spectrum shows an UV absorption edge at about 300 nm. The melting temperature of this crystal was determined to be 942 ℃ by DTA-TG measurement. The band structure of the LiSrBO3 crystal was studied by means of the first principle method. An indirect band gap was found to be about 4.0 eV, and a low dielectric constant was estimated to be about 1.9 in terms of theoretical results.
Modeling the band gap of CdS quantum well structures
Harris, R. A.; Terblans, J. J.
2016-10-01
Within the framework of the effective mass approximation, an excited electron is studied in a cadmium sulfide (CdS) quantum well with varying well widths. The envelope function approximation is employed involving a three parameter variational calculation wherein one of these parameters is the distance between the electron and the hole. The relative change in the electron's energy (relative to its energy when it is in the valence band; in the hole) is investigated as a function of the electron-hole distance. Results from numerical calculations are presented and the non-linear behavior of different sized CdS quantum wells are discussed. Comparisons between experimentally measured CdS band gap energies (as a function of well-width) and the simulation data are made. A good agreement between the current model and experimental data exists. Density functional theory (DFT) calculations are done on crystallites of extremely small sizes to compare the current model's bandgap energies to DFT-predicted bandgap values at these extremes.
Band structure and Bloch states in birefringent 1D magnetophotonic crystals: An analytical approach
Lévy, M; Levy, Miguel; Jalali, Amir A
2007-01-01
An analytical formulation for the band structure and Bloch modes in elliptically birefringent magnetophotonic crystals is presented. The model incorporates both the effects of gyrotropy and linear birefringence generally present in magneto-optic thin film devices. Full analytical expressions are obtained for the dispersion relation and Bloch modes in a layered stack photonic crystal and their properties are analyzed. It is shown that other models recently discussed in the literature are contained as special limiting cases of the formulation presented herein.
Band structures tunability of bulk 2D phononic crystals made of magneto-elastic materials
Directory of Open Access Journals (Sweden)
J. O. Vasseur
2011-12-01
Full Text Available The feasibility of contactless tunability of the band structure of two-dimensional phononic crystals is demonstrated by employing magnetostrictive materials and applying an external magnetic field. The influence of the amplitude and of the orientation with respect to the inclusion axis of the applied magnetic field are studied in details. Applications to tunable selective frequency filters with switching functionnality and to reconfigurable wave-guides and demultiplexing devices are then discussed.
Short pulse equations and localized structures in frequency band gaps of nonlinear metamaterials
Energy Technology Data Exchange (ETDEWEB)
Tsitsas, N.L. [School of Applied Mathematical and Physical Sciences, National Technical University of Athens, Zografos, Athens 15773 (Greece); Horikis, T.P. [Department of Mathematics, University of Ioannina, Ioannina 45110 (Greece); Shen, Y.; Kevrekidis, P.G.; Whitaker, N. [Department of Mathematics and Statistics, University of Massachusetts, Amherst, MA 01003-4515 (United States); Frantzeskakis, D.J., E-mail: dfrantz@phys.uoa.g [Department of Physics, University of Athens, Panepistimiopolis, Zografos, Athens 157 84 (Greece)
2010-03-01
We consider short pulse propagation in nonlinear metamaterials characterized by a weak Kerr-type nonlinearity in their dielectric response. Two short-pulse equations (SPEs) are derived for the high- and low-frequency 'band gaps' (where linear electromagnetic waves are evanescent) with linear effective permittivity epsilon<0 and permeability mu>0. The structure of the solutions of the SPEs is also briefly discussed, and connections with the soliton solutions of the nonlinear Schroedinger equation are made.
Comparing LDA-1/2, HSE03, HSE06 and G₀W₀ approaches for band gap calculations of alloys.
Pela, R R; Marques, M; Teles, L K
2015-12-23
It has long been known that the local density approximation and the generalized gradient approximation do not furnish reliable band gaps, and one needs to go beyond these approximations to reliably describe these properties. Among alternatives are the use of hybrid functionals (HSE03 and HSE06 being popular), the GW approximation or the recently proposed LDA-1/2 method. In this work, we compare rigorously the performance of these four methods in describing the band gaps of alloys, employing the generalized quasi-chemical approach to treat the disorder of the alloy and to obtain judiciously the band gap for the entire compositional range. Zincblende InGaAs and InGaN were chosen as prototypes due to their importance in optoelectronic applications. The comparison between these four approaches was guided both by the agreement between the predicted band gap and the experimental one, and by the demanded computational effort (time and memory). We observed that the HSE06 method provided the most accurate results (in comparison with experiments), whereas, surprisingly, the LDA-1/2 method gave the best compromise between accuracy and computational resources. Due to its low computational cost and good accuracy, we decided to double the supercell used to describe the alloys, and employing LDA-1/2 we observed that the bowing parameter changed remarkably, only agreeing with the measured one for the larger supercell, where LDA-1/2 plays an important role. PMID:26609566
Comparing LDA-1/2, HSE03, HSE06 and G₀W₀ approaches for band gap calculations of alloys.
Pela, R R; Marques, M; Teles, L K
2015-12-23
It has long been known that the local density approximation and the generalized gradient approximation do not furnish reliable band gaps, and one needs to go beyond these approximations to reliably describe these properties. Among alternatives are the use of hybrid functionals (HSE03 and HSE06 being popular), the GW approximation or the recently proposed LDA-1/2 method. In this work, we compare rigorously the performance of these four methods in describing the band gaps of alloys, employing the generalized quasi-chemical approach to treat the disorder of the alloy and to obtain judiciously the band gap for the entire compositional range. Zincblende InGaAs and InGaN were chosen as prototypes due to their importance in optoelectronic applications. The comparison between these four approaches was guided both by the agreement between the predicted band gap and the experimental one, and by the demanded computational effort (time and memory). We observed that the HSE06 method provided the most accurate results (in comparison with experiments), whereas, surprisingly, the LDA-1/2 method gave the best compromise between accuracy and computational resources. Due to its low computational cost and good accuracy, we decided to double the supercell used to describe the alloys, and employing LDA-1/2 we observed that the bowing parameter changed remarkably, only agreeing with the measured one for the larger supercell, where LDA-1/2 plays an important role.
Institute of Scientific and Technical Information of China (English)
ZHOU Jing; REN Xiao-Min; HUANG Yong-Qing; WANG Qi; HUANG Hui
2008-01-01
We investigate the electronic structures of new semiconductor alloys BxGa1-x As and Tlx Ga1-x As, employing first-principles calculations within the density-functional theory and the generalized gradient approximation.The calculation results indicate that alloying a small Tl content with GaAs will produce larger modifications of the band structures compared to B. A careful investigation of the internal lattice structure relaxation shows that significant bond-length relaxations takes place in both the alloys, and it turns out that difference between the band-gap bowing behaviours for B and Tl stems from the different impact of atomic relaxation on the electronic structure. The relaxed structure yields electronic-structure results, which are in good agreement with the experimental data. Finally, a comparison of formation enthalpies indicates that the production Tlx Ga1-x As with Tl concentration of at least 8% is possible.
Pan, Yong; Guan, Weiming
2016-09-01
MoS3 has attracted considerable attention as potential hydrogen storage material due to the interaction between the hydrogen and unsaturated sulfur atoms. However, its structure and physical properties are unknown. By means of first-principles approach and Inorganic crystal structure Database (ISCD), we systematically investigated the structure, relevant physical and thermodynamic properties of MoS3. Phonon dispersion, electronic structure, band structure and heat capacity are calculated in detail. We predicted the orthorhombic B2ab (SrS3-type) and tetragonal P-421m (BaS3-type) structures of MoS3, which prefers to form the SrS3-type (Space group: B2ab, No.41) structure at the ground state. High pressure results in structural transition from SrS3-type structure to BaS3-type structure. This sulfide exhibits a degree of metallic behavior. The calculated heat capacity of MoS3 with SrS3-type structure is about of 39 J/(mol·K).
de Simone, Monica; Coreno, Marcello; Green, Jennifer C; McGrady, Sean; Pritchard, Helen
2003-03-24
Valence photoelectron (PE) spectra have been measured for ReO(3)Me using a synchrotron source for photon energies ranging between 20 and 110 eV. Derived branching ratios (BR) and relative partial photoionization cross sections (RPPICS) are interpreted in the context of a bonding model calculated using density functional theory (DFT). Agreement between calculated and observed ionization energies (IE) is excellent. The 5d character of the orbitals correlates with the 5p --> 5d resonances of the associated RPPICS; these resonances commence around 47 eV. Bands with 5d character also show a RPPICS maximum at 35 eV. The RPPICS associated with the totally symmetric 4a(1) orbital, which has s-like character, shows an additional shape resonance with an onset of 43 eV. The PE spectrum of the inner valence and core region measured with photon energies of 108 and 210 eV shows ionization associated with C 2s, O 2s, and Re 4f and 5p electrons. Absorption spectra measured in the region of the O1s edge showed structure assignable to excitation to the low lying empty "d" orbitals of this d(0) molecule. The separation of the absorption bands corresponded with the calculated orbital splitting and their intensity with the calculated O 2p character. Broad bands associated with Re 4d absorption were assigned to (2)D(5/2) and (2)D(3/2) hole states. Structure was observed associated with the C1s edge but instrumental factors prevented firm assignment. At the Re 5p edge, structure was observed on the (2)P(3/2) absorption band resulting from excitation to the empty "d" levels. The intensity ratios differed from that of the O 1s edge structure but were in good agreement with the calculated 5d character of these orbitals. An absorption was observed at 45 eV, which, in the light of the resonance in the 4a(1) RPPICS, is assigned to a 4a(1) --> ne, na(2) transition. The electronic structure established for ReO(3)Me differs substantially from that of TiCl(3)Me and accounts for the difference in
Influence of the energy-band structure on ultracold reactive processes in lattices
Terrier, H.; Launay, J.-M.; Simoni, A.
2016-03-01
We study theoretically ultracold collisions in quasi-one-dimensional optical traps for bosonic and fermionic reactive molecules in the presence of a periodic potential along the trap axis. Elastic, reactive, and umklapp processes due to nonconservation of the center-of-mass motion are investigated for parameters of relevant experimental interest. The model naturally keeps into account the effect of excited energy bands and is particularly suited for being adapted to rigorous close-coupled calculations. Our formalism shows that a correct derivation of the parameters in tight-binding effective models must include the strong momentum dependence of the coupling constant we predict even for deep lattices.
Band-Structure Trend in Hole-Doped Cuprates and Correlation with {Tc}{sub MAX}
Energy Technology Data Exchange (ETDEWEB)
Pavarini, E.; Dasgupta, I.; Saha-Dasgupta, T.; Jepsen, O.; Andersen, O. K.
2001-07-23
By calculation and analysis of the bare conduction bands in a large number of hole-doped high-temperature superconductors, we have identified the range of the intralayer hopping as the essential, material-dependent parameter. It is controlled by the energy of the axial orbital, a hybrid between Cu4s , apical-oxygen 2p{sub z} , and farther orbitals. Materials with higher {Tc}{sub max} have larger hopping ranges and axial orbitals more localized in the CuO{sub 2} layers.
Predoi-Cross, A.; Malathy Devi, V.; Sutradhar, P.; Sinyakova, T.; Buldyreva, J.; Sung, K.; Smith, M. A. H.; Mantz, A. W.
2016-07-01
This paper presents the results of a spectroscopic line shape study of self- and nitrogen-broadened 12CH3D transitions in the ν3 and ν5 bands in the Triad region. We combined five pure gas spectra with eighteen spectra of lean mixtures of 12CH3D and nitrogen, all recorded with a Bruker IFS-125 HR Fourier transform spectrometer. The spectra have been analyzed simultaneously using a multispectrum nonlinear least squares fitting technique. N2-broadened line parameters for 184 transitions in the ν3 band and 205 transitions in the ν5 band were measured. In addition, line positions and line intensities were measured for 168 transitions in the ν3 band and 214 transitions in the ν5 band. We have observed 10 instances of weak line mixing corresponding to K″=3 A1 or A2 transitions. Comparisons were made for the N2-broadening coefficients and associated temperature exponents with corresponding values calculated using a semi-classical Robert Bonamy type formalism that involved an inter-molecular potential with terms corresponding to short- and long-range interactions, and exact classical molecular trajectories. The theoretical N2-broadened coefficients are overestimated for high J values, but are in good agreement with the experimental values for small and middle range J values.
Energy Technology Data Exchange (ETDEWEB)
Brik, M.G., E-mail: brik@fi.tartu.e [Institute of Physics, University of Tartu, Riia 142, Tartu 51014, Tartu (Estonia)
2011-02-15
Detailed ab initio calculations of the structural, electronic, optical and elastic properties of two crystals - magnesite (MgCO{sub 3}) and calcite (CaCO{sub 3}) - are reported in the present paper. Both compounds are important natural minerals, playing an important role in the carbon dioxide cycling. The optimized crystal structures, band gaps, density of states diagrams, elastic constants, optical absorption spectra and refractive indexes dependence on the wavelength all have been calculated and compared, when available, with literature data. Both crystals are indirect band compounds, with calculated band gaps of 5.08 eV for MgCO{sub 3} and 5.023 eV for CaCO{sub 3}. Both values are underestimated by approximately 1.0 eV with respect to the experimental data. Although both crystals have the same structure, substitution of Mg by Ca ions leads to certain differences, which manifest themselves in noticeable change in the electronic bands profiles and widths, shape of the calculated absorption spectra, and values of the elastic constants. Response of both crystals to the applied hydrostatic pressure was analyzed in the pressure range of phase stability, variations of the lattice parameters and characteristic interionic distances were considered. The obtained dependencies of lattice constants and calculated band gap on pressure can be used for prediction of properties of these two hosts at elevated pressures that occur in the Earth's mantle. -- Research highlights: {yields} Ab initio calculations of physical properties of MgCO{sub 3} and CaCO{sub 3} were performed. {yields} Changes of the calculated properties with replacement of Mg by Ca were followed. {yields} Pressure dependence of the structural and electronic properties was analyzed. {yields} Good agreement with experimental data was demonstrated.
Hyper-Temporal C-Band SAR for Baseline Woody Structural Assessments in Deciduous Savannas
Directory of Open Access Journals (Sweden)
Russell Main
2016-08-01
Full Text Available Savanna ecosystems and their woody vegetation provide valuable resources and ecosystem services. Locally calibrated and cost effective estimates of these resources are required in order to satisfy commitments to monitor and manage change within them. Baseline maps of woody resources are important for analyzing change over time. Freely available, and highly repetitive, C-band data has the potential to be a viable alternative to high-resolution commercial SAR imagery (e.g., RADARSAT-2, ALOS2 in generating large-scale woody resources maps. Using airborne LiDAR as calibration, we investigated the relationships between hyper-temporal C-band ASAR data and woody structural parameters, namely total canopy cover (TCC and total canopy volume (TCV, in a deciduous savanna environment. Results showed that: the temporal filter reduced image variance; the random forest model out-performed the linear model; while the TCV metric consistently showed marginally higher accuracies than the TCC metric. Combinations of between 6 and 10 images could produce results comparable to high resolution commercial (C- & L-band SAR imagery. The approach showed promise for producing a regional scale, locally calibrated, baseline maps for the management of deciduous savanna resources, and lay a foundation for monitoring using time series of data from newer C-band SAR sensors (e.g., Sentinel1.
Influence of the sequence on the ab initio band structures of single and double stranded DNA models
International Nuclear Information System (INIS)
The solid state physical approach is widely used for the characterization of electronic properties of DNA. In the simplest case the helical symmetry is explicitly utilized with a repeat unit containing only a single nucleotide or nucleotide pair. This model provides a band structure that is easily interpretable and reflects the main characteristic features of the single nucleotide or a nucleotide pair chain, respectively. The chemical variability of the different DNA chains is, however, almost completely neglected in this way. In the present work we have investigated the effect of the different sequences on the band structure of periodic DNA models. For this purpose we have applied the Hartree–Fock crystal orbital method for single and double stranded DNA chains with two different subsequent nucleotides in the repeat unit of former and two different nucleotide pairs in the latter case, respectively. These results are compared to simple helical models with uniform sequences. The valence and conduction bands related to the stacked nucleotide bases of single stranded DNA built up only from guanidine as well as of double stranded DNA built up only from guanidine–cytidine pairs showed special properties different from the other cases. Namely, they had higher conduction and lower valence band positions and this way larger band gaps and smaller widths of these bands. With the introduction of non-uniform guanidine containing sequences band structures became more similar to each other and to the band structures of other sequences without guanidine. The maximal bandwidths of the non-uniform sequences are considerably smaller than in the case of uniform sequences implying smaller charge carrier mobilities both in the conduction and valence bands. - Highlights: • HF Energy bands in DNA. • The role of aperiodicity in the DNA band structure. • Hole mobilities in quasi-periodic DNA with broader valence bands
Quasiparticle band structure for the Hubbard systems: Application to. alpha. -CeAl sub 2
Energy Technology Data Exchange (ETDEWEB)
Costa-Quintana, J.; Lopez-Aguilar, F. (Departamento de Fisica, Grupo de Electromagnetismo, Universidad Autonoma de Barcelona, Bellaterra, E-08193 Barcelona, Spain (ES)); Balle, S. (Departament de Fisica, Universitat de les Illes Balears, E-07071 Palma de Mallorca, Spain (ES)); Salvador, R. (Control Data Corporation, TALLAHASSEE, FL (USA) Supercomputer Computations Research Institute, Florida State University, Tallahassee, Florida 32306-4052 (USA))
1990-04-01
A self-energy formalism for determining the quasiparticle band structure of the Hubbard systems is deduced. The self-energy is obtained from the dynamically screened Coulomb interaction whose bare value is the correlation energy {ital U}. A method for integrating the Schroedingerlike equation with the self-energy operator is given. The method is applied to the cubic Laves phase of {alpha}-CeAl{sub 2} because it is a clear Hubbard system with a very complex electronic structure and, moreover, this system provides us with sufficient experimental data for testing our method.
DFT Study of Effects of Potassium Doping on Band Structure of Crystalline Cuprous Azide
Institute of Scientific and Technical Information of China (English)
ZHU,Wei-Hua; ZHANG,Xiao-Wen; WEI,Tao; XIAO,He-Ming
2008-01-01
The structure and defect formation energies of the K-doped CuN3 were studied using density functional theory within the generalized gradient approximation. The results show that the K-doping breaks the azide symmetry and causes asymmetric atomic displacement. As the K-doping level increases, the band gap of the doped system gradually increases. The K impurity is easily incorporated into the crystal thermodynamically. The Cu vacancy is easily created thermodynamically and the K impurity can serve as nucleation centers for vacancy clustering. Finally the effects of K-doping concentrations on the sensitivity of CuN3 were understood based on electronic structures.
Stubrov, Yurii; Nikolenko, Andrii; Gubanov, Viktor; Strelchuk, Viktor
2016-12-01
Micro-Raman spectra of single-walled carbon nanotubes in the range of two-phonon 2D bands are investigated in detail. The fine structure of two-phonon 2D bands in the low-temperature Raman spectra of the mixture and individual single-walled carbon nanotubes is considered as the reflection of structure of their π-electron zones. The dispersion behavior of 2D band fine structure components in the resonant Raman spectra of single-walled carbon nanotube mixture is studied depending on the energy of excitating photons. The role of incoming and outgoing electron-phonon resonances in the formation of 2D band fine structure in Raman spectra of single-walled carbon nanotubes is analyzed. The similarity of dispersion behavior of 2D phonon bands in single-walled carbon nanotubes, one-layer graphene, and bulk graphite is discussed. PMID:26729220
Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped
Energy Technology Data Exchange (ETDEWEB)
Romaka, V. A., E-mail: vromaka@polynet.lviv.ua [National Academy of Sciences of Ukraine, Pidstryhach Institute for Applied Problems of Mechanics and Mathematics (Ukraine); Rogl, P. [Universitet Wien, Institut für Physikalische Chemie (Austria); Romaka, V. V. [National University “Lvivs’ka Politekhnika” (Ukraine); Kaczorowski, D.; Stadnyk, Yu. V. [Polish Academy of Sciences, Institute of Low Temperature and Structure Research (Poland); Korzh, R. O.; Krayovskyy, V. Ya.; Kovbasyuk, T. M. [National University “Lvivs’ka Politekhnika” (Ukraine)
2015-03-15
The crystal and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with a Lu acceptor impurity in the ranges T = 80–400 K and N{sub A}{sup Lu} ≈ 1.9 × 10{sup 20}−1.9 × 10{sup 21} cm{sup −3} (x = 0.01–0.10) at H ≤ 10 kG is studied. The nature of the structural-defect generation mechanism leading to changes in the band gap and the degree of semiconductor compensation is determined. Its essence is the simultaneous reduction and elimination of donor-type structural defects due to the displacement of ∼1% of Ni atoms from the Hf (4a) site, the generation of acceptor-type structural defects by substituting Ni atoms with Lu atoms at the 4c site, and the generation of donor-type defects such as vacancies at the Sn (4b) site. The results of calculations of the electronic structure of Hf{sub 1−x}Lu{sub x}NiSn are in agreement with experimental data. The results are discussed within the model of a heavily doped and compensated Shklovskii-Efros semiconductor.
Cassagne, D.
Photonic band gap materials Photonic band gap materials are periodic dielectric structures that control the propagation of electromagnetic waves. We describe the plane wave method, which allows to calculate the band structures of photonic crystals. By symmetry analysis and a perturbative approach, we predict the appearance of the low energy photonic band gaps of hexagonal structures. We propose new two-dimensional structures called graphite and boron nitride. Using a transfer matrix method, we calculate the transmission of the graphite structure and we show the crucial role of the coupling with external modes. We study the appearance of allowed modes in the photonic band gap by the introduction of localized defects in the periodicity. Finally, we discuss the properties of opals formed by self-organized silica microspheres, which are very promising for the fabrication of three-dimensional photonic crystals. Les matériaux à bandes interdites photoniques sont des structures diélectriques périodiques qui contrôlent la propagation des ondes électromagnétiques. Nous décrivons la méthode des ondes planes qui permet de calculer les structures de bandes des cristaux photoniques. Par une analyse de la symétrie et une approche perturbative, nous précisons les conditions d'existence des bandes interdites de basse énergie. Nous proposons de nouvelles structures bidimensionnelles appelées graphite et nitrure de bore. Grâce à une méthode de matrices de transfert, nous calculons la transmission de la structure graphite et nous mettons en évidence le rôle fondamental du couplage avec les modes extérieurs. Nous étudions l'apparition de modes permis dans la bande interdite grâce à l'introduction de défauts dans la périodicité. Enfin, nous discutons les propriétés des opales constituées de micro-billes de silice auto-organisées, qui sont très prometteuses pour la fabrication de cristaux photoniques tridimensionnels.
Spectroscopic ellipsometry of Ni3Al in comparison with band-structure calculations
Heide, P.A.M. van der; Buiting, J.J.M.; Dam, L.M. ten; Schreurs, L.W.M.; Groot, R.A. de; Vroomen, A.R. de
1985-01-01
The optical constants of Ni3Al from 0.5 to 5.3 eV have been determined by means of spectroscopic ellipsometry at room temperature under ultra-high vacuum conditions. Measurements were performed on a single crystal and a polycrystalline sample, which gave identical results. The results are compared w
Weakly nonlinear dispersion and stop-band effects for periodic structures
DEFF Research Database (Denmark)
Sorokin, Vladislav; Thomsen, Jon Juel
, not necessarily small, we consider the effects of weak nonlinearity on the dispersion relation and frequency band-gaps. A novel approach, the Method of Varying Amplitudes [4], is employed. This approach is inspired by the method of direct separation of motions [5], and may be considered a natural continuation......Continua and structures composed of periodically repeated elements (cells) are used in many fields of science and technology. Examples of continua are composite materials, consisting of alternating volumes of substances with different properties, mechanical filters and wave guides. Examples...... of frequency band-gaps, i.e. frequency ranges in which elastic waves cannot propagate. Most existing analytical methods in the field are based on Floquet theory [1]; e.g. this holds for the classical Hill’s method of infinite determinants [1,2], and themethod of space-harmonics [3]. However, application...
Energy Technology Data Exchange (ETDEWEB)
Chen Feng [Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Euaruksakul, Chanan; Himpsel, F J; Lagally, Max G [University of Wisconsin-Madison, Madison, WI 53706 (United States); Liu Zheng; Liu Feng, E-mail: lagally@engr.wisc.edu [University of Utah, Salt Lake City, UT 84112 (United States)
2011-08-17
Strain changes the band structure of semiconductors. We use x-ray absorption spectroscopy to study the change in the density of conduction band (CB) states when silicon is uniaxially strained along the [1 0 0] and [1 1 0] directions. High stress can be applied to silicon nanomembranes, because their thinness allows high levels of strain without fracture. Strain-induced changes in both the sixfold degenerate {Delta} valleys and the eightfold degenerate L valleys are determined quantitatively. The uniaxial deformation potentials of both {Delta} and L valleys are directly extracted using a strain tensor appropriate to the boundary conditions, i.e., confinement in the plane in the direction orthogonal to the straining direction, which correspond to those of strained CMOS in commercial applications. The experimentally determined deformation potentials match the theoretical predictions well. We predict electron mobility enhancement created by strain-induced CB modifications.
Impurity effects on the band structure of one-dimensional photonic crystals: experiment and theory
Energy Technology Data Exchange (ETDEWEB)
Luna-Acosta, G A [Instituto de Fisica, BUAP Apartado Postal J-48, 72570 Puebla (Mexico); Schanze, H; Kuhl, U; Stoeckmann, H-J [Fachbereich Physik der Philipps-Universitaet Marburg, Renthof 5, D-35032 (Germany)], E-mail: gluna@sirio.ifuap.buap.mx
2008-04-15
We study the effects of single impurities on the transmission in microwave realizations of the photonic Kronig-Penney model, consisting of arrays of Teflon pieces alternating with air spacings in a microwave guide. As only the first propagating mode is considered, the system is essentially one-dimensional (1D) obeying the Helmholtz equation. We derive analytical closed form expressions from which the band structure, frequency of defect modes and band profiles can be determined. These agree very well with experimental data for all types of single defects considered (e.g. interstitial and substitutional) and show that our experimental set-up serves to explore some of the phenomena occurring in more sophisticated experiments. Conversely, based on the understanding provided by our formulae, information about the unknown impurity can be determined by simply observing certain features in the experimental data for the transmission. Further, our results are directly applicable to the closely related quantum 1D Kronig-Penney model.
Investigation of the Band Structure of Graphene-Based Plasmonic Photonic Crystals
Directory of Open Access Journals (Sweden)
Pingping Qiu
2016-09-01
Full Text Available In this paper, one-dimensional (1D and two-dimensional (2D graphene-based plasmonic photonic crystals (PhCs are proposed. The band structures and density of states (DOS have been numerically investigated. Photonic band gaps (PBGs are found in both 1D and 2D PhCs. Meanwhile, graphene-based plasmonic PhC nanocavity with resonant frequency around 175 THz, is realized by introducing point defect, where the chemical potential is from 0.085 to 0.25 eV, in a 2D PhC. Also, the bending wvaguide and the beam splitter are realized by introducing the line defect into the 2D PhC.
Impurity effects on the band structure of one-dimensional photonic crystals: Experiment and theory
Luna-Acosta, G A; Kuhl, U; Stoeckmann, H -J
2007-01-01
We study the effects of single impurities on the transmission in microwave realizations of the photonic Kronig-Penney model, consisting of arrays of Teflon pieces alternating with air spacings in a microwave guide. As only the first propagating mode is considered, the system is essentially one dimensional obeying the Helmholtz equation. We derive analytical closed form expressions from which the band structure, frequency of defect modes, and band profiles can be determined. These agree very well with experimental data for all types of single defects considered (e. g. interstitial, substitutional) and shows that our experimental set-up serves to explore some of the phenomena occurring in more sophisticated experiments. Conversely, based on the understanding provided by our formulas, information about the unknown impurity can be determined by simply observing certain features in the experimental data for the transmission. Further, our results are directly applicable to the closely related quantum 1D Kronig-Penn...
Energy Technology Data Exchange (ETDEWEB)
Peng, Ren-Ming [School of Physics & Electronic Engineering, Mianyang Normal University, Mianyang 621000 (China); Mei, Yang [School of Physics & Electronic Engineering, Mianyang Normal University, Mianyang 621000 (China); Research Center of Computational Physics, Mianyang Normal University, Mianyang 621000 (China); Zheng, Wen-Chen, E-mail: zhengwc1@163.com [Department of Material Science, Sichuan University, Chengdu 610064 (China); Wei, Cheng-Fu [School of Physics & Electronic Engineering, Mianyang Normal University, Mianyang 621000 (China)
2015-03-15
The optical band positions of W{sup 5+} octahedral clusters (WO{sub 6}){sup 7−} in tungsten oxide (WO{sub 3})-based glasses are reassigned and suggested. Based on this, the spin-Hamiltonian parameters (g factors g{sub //}, g{sub ⊥} and hyperfine structure constants A{sub //}, A{sub ⊥}) of these W{sup 5+} clusters are calculated from the high-order perturbation formulas based on the two-mechanism model. In the model, besides the contributions due to crystal-field (CF) mechanism in the extensively-used CF theory, the contributions owing to charge-transfer (CT) mechanism (which are often omitted) are also included. The calculated results are in reasonable agreement with the experimental values and the signs of hyperfine structure constants A{sub i} are suggested. The results are discussed.
HOM-Free Linear Accelerating Structure for e+ e- Linear Collider at C-Band
Kubo, K
2003-01-01
HOM-free linear acceleration structure using the choke mode cavity (damped cavity) is now under design for e sup + e sup - linear collider project at C-band frequency (5712 MHz). Since this structure shows powerful damping effect on most of all HOMs, there is no multibunch problem due to long range wakefields. The structure will be equipped with the microwave absorbers in each cells and also the in-line dummy load in the last few cells. The straightness tolerance for 1.8 m long structure is closer than 30 (micro)m for 25% emittance dilution limit, which can be achieved by standard machining and braising techniques. Since it has good vacuum pumping conductance through annular gaps in each cell, instabilities due to the interaction of beam with the residual-gas and ions can be minimized.
Giant amplification in degenerate band edge slow-wave structures interacting with an electron beam
Othman, Mohamed A. K.; Veysi, Mehdi; Figotin, Alexander; Capolino, Filippo
2016-03-01
We propose a new amplification regime based on a synchronous operation of four degenerate electromagnetic (EM) modes in a slow-wave structure and the electron beam, referred to as super synchronization. These four EM modes arise in a Fabry-Pérot cavity when degenerate band edge (DBE) condition is satisfied. The modes interact constructively with the electron beam resulting in superior amplification. In particular, much larger gains are achieved for smaller beam currents compared to conventional structures based on synchronization with only a single EM mode. We demonstrate giant gain scaling with respect to the length of the slow-wave structure compared to conventional Pierce type single mode traveling wave tube amplifiers. We construct a coupled transmission line model for a loaded waveguide slow-wave structure exhibiting a DBE, and investigate the phenomenon of giant gain via super synchronization using the Pierce model generalized to multimode interaction.
Electronic band structures of AV{sub 2} (A = Ta, Ti, Hf and Nb) Laves phase compounds
Energy Technology Data Exchange (ETDEWEB)
Charifi, Z; Baaziz, H [Physics Department, Faculty of Science and Engineering, University of M' sila, 28000 M' sila (Algeria); Reshak, Ali Hussain [Institute of Physical Biology, South Bohemia University, Nove Hrady 37333 (Czech Republic)], E-mail: maalidph@yahoo.co.uk
2009-01-14
First-principles density functional calculations, using the all-electron full potential linearized augmented plane wave method, have been performed in order to investigate the structural and electronic properties for Laves phase AV{sub 2} (A = Ta, Ti, Hf and Nb) compounds. The generalized gradient approximation and the Engel-Vosko-generalized gradient approximation were used. Our calculations show that these compounds are metallic with more bands cutting the Fermi energy (E{sub F}) as we move from Nb to Ta, Hf and Ti, consistent with the increase in the values of the density of states at the Fermi level N(E{sub F}). N(E{sub F}) is controlled by the overlapping of V-p/d, A-d and A-p states around the Fermi energy. The ground state properties of these compounds, such as equilibrium lattice constant, are calculated and compared with the available literature. There is a strong/weak hybridization between the states, V-s states are strongly hybridized with A-s states below and above E{sub F}. Around the Fermi energy we notice that V-p shows strong hybridization with A-p states.
Excitonic spectra and band structure of CdGa{sub 2}Se{sub 4} birefractive crystals
Energy Technology Data Exchange (ETDEWEB)
Syrbu, N.N., E-mail: sirbunn@yahoo.com [Technical University of Moldova, 168 Stefan cel Mare Avenue, 2004 Chisinau, Republic of Moldova (Moldova, Republic of); Stamov, I.G. [T.G. Shevchenko State University of Pridnestrovie, 25 Oktyabrya Street 107, 3300 Tiraspol, Republic of Moldova (Moldova, Republic of); Parvan, V.I. [Technical University of Moldova, 168 Stefan cel Mare Avenue, 2004 Chisinau, Republic of Moldova (Moldova, Republic of); Zalamai, V.V. [Institute of Applied Physics, Academy of Sciences of Moldova, 5 Academy Street, 2028 Chisinau, Republic of Moldova (Moldova, Republic of); Tiginyanu, I.M. [Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, 3/3 Academy Street, 2028 Chisinau, Republic of Moldova (Moldova, Republic of)
2013-11-15
We report on the intersection of spectral dependences of refractive indices n{sub o} and n{sub e} at the wavelengths 546 nm (λ{sub 0}) and 450 nm (λ{sub 01}) in CdGa{sub 2}Se{sub 4} single crystals. The value of difference Δn=n{sub e}−n{sub o} is equal to zero at the wavelengths involved. When placed between two crossed polarizers, the crystals of CdGa{sub 2}Se{sub 4} exhibit a transmission band at the wavelength of λ{sub 0}=546 nm (300 K). The ground and excited states of three excitonic series (A, B and C) were found out at 13 K in CdGa{sub 2}Se{sub 4} crystals, and other parameters of excitons and bands were determined. In the Γ point of Brillouin zone the effective mass of electrons m{sub c} is equal to 0.14m{sub 0}, and the effective masses of holes m{sub v2} and m{sub v3} are equal to 0.76m{sub 0} and 0.94m{sub 0}, respectively. The hole mass m{sub v1} depends upon the direction of wave vector k: at polarization E∥c, k∥a the mass m{sub v1}=1.15m{sub 0}, and at polarization E∥c, k∥b m{sub v1}=0.84m{sub 0}. The values of valence bands splitting in the center of Brillouin zone by the crystal field (Δ{sub cf}=49 meV) and spin–orbital interaction (Δ{sub so}=351 meV) were determined. The optical functions n, k, ε{sub 1} and ε{sub 2} in polarizations E⊥c and E∥c for the energy diapason from 3 to 6 eV were calculated from the reflectivity spectra by Kramers–Kronig analysis. The evidenced features are discussed on the basis of recent theoretical calculations of the band structure of CdGa{sub 2}Se{sub 4} crystals.
Directory of Open Access Journals (Sweden)
Yingsong Li
2013-01-01
Full Text Available A printed reconfigurable ultra-wideband (UWB monopole antenna with triple narrow band-notched characteristics is proposed for cognitive radio applications in this paper. The triple narrow band-notched frequencies are obtained using a defected microstrip structure (DMS band stop filter (BSF embedded in the microstrip feed line and an inverted π-shaped slot etched in the rectangular radiation patch, respectively. Reconfigurable characteristics of the proposed cognitive radio antenna (CRA are achieved by means of four ideal switches integrated on the DMS-BSF and the inverted π-shaped slot. The proposed UWB CRA can work at eight modes by controlling switches ON and OFF. Moreover, impedance bandwidth, design procedures, and radiation patterns are presented for analysis and explanation of this antenna. The designed antenna operates over the frequency band between 3.1 GHz and 14 GHz (bandwidth of 127.5%, with three notched bands from 4.2 GHz to 6.2 GHz (38.5%, 6.6 GHz to 7.0 GHz (6%, and 12.2 GHz to 14 GHz (13.7%. The antenna is successfully simulated, fabricated, and measured. The results show that it has wide impedance bandwidth, multimodes characteristics, stable gain, and omnidirectional radiation patterns.
A Calculation Model for Corrosion Cracking in RC Structures
Institute of Scientific and Technical Information of China (English)
Xu Gang; Wei Jun; Zhang Keqiang; Zhou Xiwu
2007-01-01
A novel calculation model is proposed aiming at the problem of concrete cover cracking induced by reinforcement corrosion. In this article, the relationship between the corrosion depth of the bar and the thickness of the rust layer is established. By deducing the radial displacement expression of concrete, the formula for corrosion depth and corrosion pressure before cracking is proposed. The crack depth of cover in accordance with the maximum corrosion pressure is deduced; furthermore, the corrosion depth and corrosion pressure at the cracking time are obtained. Finally, the theoretical model is validated by several experiments, and the calculated values agree well with the experiment results.
Energy Technology Data Exchange (ETDEWEB)
Benrekia, A.R., E-mail: benrekia.ahmed@yahoo.com [Faculty of Science and Technology, University of Medea (Algeria); Benkhettou, N. [Laboratoire des Materiaux Magnetiques, Faculte des Sciences, Universite Djillali Liabes de Sidi Bel Abbes (Algeria); Nassour, A. [Laboratoire de Cristallographie, Resonance Magnetique et Modelisations (CRM2, UMR CNRS 7036) Institut Jean Barriol, Nancy Universite BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre-les-Nancy (France); Driz, M. [Applied Material Laboratory (AML), Electronics Department, University of Sidi bel Abbes (DZ 22000) (Algeria); Sahnoun, M. [Laboratoire de Physique Quantique de la Matiere et Modelisations Mathematique (LPQ3M), Faculty of Science and Technology,University of Mascara (Algeria); Lebegue, S. [Laboratoire de Cristallographie, Resonance Magnetique et Modelisations (CRM2, UMR CNRS 7036) Institut Jean Barriol, Nancy Universite BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre-les-Nancy (France)
2012-07-01
We present first-principles VASP calculations of the structural, electronic, vibrational, and optical properties of paraelectric SrTiO{sub 3} and KTaO{sub 3}. The ab initio calculations are performed in the framework of density functional theory with different exchange-correlation potentials. Our calculated lattice parameters, elastic constants, and vibrational frequencies are found to be in good agreement with the available experimental values. Then, the bandstructures are calculated with the GW approximation, and the corresponding band gap is used to obtain the optical properties of SrTiO{sub 3} and KTaO{sub 3}.
Exciton spectra and energy band structure of Cu{sub 2}ZnSiSe{sub 4}
Energy Technology Data Exchange (ETDEWEB)
Guc, M., E-mail: gmax@phys.asm.md [Institute of Applied Physics, Academy of Sciences of Moldova, Academiei Str. 5, Chisinau MD 2028, Republic of Moldova (Moldova, Republic of); Levcenko, S. [Helmholtz Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Dermenji, L. [Institute of Applied Physics, Academy of Sciences of Moldova, Academiei Str. 5, Chisinau MD 2028, Republic of Moldova (Moldova, Republic of); Gurieva, G. [Helmholtz Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Schorr, S. [Helmholtz Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Free University Berlin, Institute of Geological Sciences, Malteserstr. 74-100, Berlin (Germany); Syrbu, N.N. [Technical University of Moldova, Chisinau MD-2004, Republic of Moldova (Moldova, Republic of); Arushanov, E. [Institute of Applied Physics, Academy of Sciences of Moldova, Academiei Str. 5, Chisinau MD 2028, Republic of Moldova (Moldova, Republic of)
2014-02-25
Highlights: • Reflection spectra of Cu{sub 2}ZnSiSe{sub 4} were studied for E ⊥ c and E || c light polarizations. • Four excitonic series are revealed in the reflection spectra at 10 K. • Model of exciton dispersion and the presence of a dead-layer. • Exciton Rydberg energies and free carriers effective masses were calculated. • Reflectivity for E ⊥ c and E || c were analyzed in the region 3–6 eV at 300 K. -- Abstract: Exciton spectra are studied in Cu{sub 2}ZnSiSe{sub 4} single crystals at 10 and 300 K by means of reflection spectroscopy. The exciton parameters, dielectric constant and free carriers effective masses are deduced from experimental spectra by calculations in the framework of a model taking into account the spatial dispersion and the presence of a dead-layer. The structure found in the reflectivity was analyzed and related to the theoretical electronic band structure of close related Cu{sub 2}ZnSiS{sub 4} semiconductor.
Bhat, G H; Sun, Y; Palit, R
2015-01-01
Band structures of the neutron-rich Mo- and Ru-isotopes around A $\\sim $ 110 are investigated using the triaxial projected shell model (TPSM) approach employing multi-quasiparticle configuration space. The mass region under investigation depicts a rich variety of band structures with well developed $\\gamma$- and $\\gamma\\gamma$-bands, and quasiparticle excitations based on them. It is demonstrated that TPSM provides a reasonable description of most of the observed properties, in particular, detailed structure variations observed in Mo-isotopes are well reproduced in the present work.
Band structures of sup 1 sup 8 sup 2 Os studied by GCM based on 3D-CHFB
Horibata, T; Onishi, N; Ansari, A
1999-01-01
Band structure properties of sup 1 sup 8 sup 2 Os are investigated through a particle number and angular momentum constrained generator coordinate (GCM) calculation based on self-consistent three-dimensional cranking solutions. From the analysis of the wave function of the lowest GCM solution, we confirm that this nucleus shows a tilted rotational motion in its yrast states, at least with the present set of force parameters of the pairing-plus-quadrupole interaction Hamiltonian. A close examination of the behaviour of the other GCM solutions reveals a sign of a possible occurrence of multi-band crossing in the nucleus. We have also found a new potential curve along the prime meridian on the globe of the J = 18(Planck constant/2 pi) sphere. Along this new solution the characters of proton and neutron gap parameters get interchanged. Namely, DELTA sub p almost vanishes while DELTA sub n grows to a finite value close to the one corresponding to the principal axis rotation (PAR). A state in the new solution curve...
Song, Yun; Cao, Yu; Wang, Jing; Zhou, Yong-Ning; Fang, Fang; Li, Yuesheng; Gao, Shang-Peng; Gu, Qin-Fen; Hu, Linfeng; Sun, Dalin
2016-08-24
As a novel class of soft matter, two-dimensional (2D) atomic nanosheet-like crystals have attracted much attention for energy storage devices due to the fact that nearly all of the atoms can be exposed to the electrolyte and involved in redox reactions. Herein, atomically thin γ-FeOOH nanosheets with a thickness of ∼1.5 nm are synthesized in a high yield, and the band and electronic structures of the γ-FeOOH nanosheet are revealed using density-functional theory calculations for the first time. The rationally designed γ-FeOOH@rGO composites with a heterostacking structure are used as an anode material for lithium-ion batteries (LIBs). A high reversible capacity over 850 mAh g(-1) after 100 cycles at 200 mA g(-1) is obtained with excellent rate capability. The remarkable performance is attributed to the ultrathin nature of γ-FeOOH nanosheets and 2D heterostacking structure, which provide the minimized Li(+) diffusion length and buffer zone for volume change. Further investigation on the Li storage electrochemical mechanism of γ-FeOOH@rGO indicates that the charge-discharge processes include both conversion reaction and capacitive behavior. This synergistic effect of conversion reaction and capacitive behavior originating from 2D heterostacking structure casts new light on the development of high-energy anode materials. PMID:27471909
Microscopic Nuclear Structure and Reaction Calculations in the FMD Approach
Neff, T.; Feldmeier, H.; Langanke, K.
We present here a first application of the Fermionic Molecular Dynamics (FMD) approach to low-energy nuclear reactions, namely the $^3$He($\\alpha$,$\\gamma$)$^7$Be radiative capture reaction. We divide the Hilbert space into an external region where the system is described as $^3$He and $^4$He clusters interacting only via the Coulomb interaction and an internal region where the nuclear interaction will polarize the clusters. Polarized configurations are obtained by a variation after parity and angular momentum projection procedure with respect to the parameters of all single particle states. A constraint on the radius of the intrinsic many-body state is employed to obtain polarized clusters at desired distances. The boundary conditions for bound and scattering states are implemented using the Bloch operator. The FMD calculations reproduce the correct energy for the centroid of the $3/2^-$ and $1/2^-$ bound states in $^7$Be. The charge radius of the ground state is in good agreement with recent experimental results. The FMD calculations also describe well the experimental phase shift data in the $1/2^+$, $3/2^+$ and $5/2^+$ channels that are important for the capture reaction at low energies. Using the bound and scattering many-body wave functions we calculate the radiative capture cross section. The calculated $S$ factor agrees very well, both in absolute normalization and energy dependence, with the recent experimental data from the Weizmann, LUNA, Seattle and ERNA experiments.
Atomic structure calculations using the relativistic random phase approximation
International Nuclear Information System (INIS)
A brief review is given for the relativistic random phase approximation (RRPA) applied to atomic transition problems. Selected examples of RRPA calculations on discrete excitations and photoionization are given to illustrate the need of relativistic many-body theories in dealing with atomic processes where both relativity and correlation are important
Calculation of hybrid joints used in modern aerospace structures
Directory of Open Access Journals (Sweden)
Marcel STERE
2011-12-01
Full Text Available The state – of - the art of aeronautical structures show that parts are manufactured and subsequently assembled with the use of fasteners and/ or bonding. Adhesive bonding is a key technology to low weight, high fatigue resistance, robustness and an attractive design for cost structures.The paper results resolve significant problems for two groups of end-users:1 for the aerospace design office: a robust procedure for the design of the hybrid joint structural components;2 for the aeronautical repair centres: a useful procedure for structural design and analysis with significant cost savings.
Direct Band Gap Wurtzite Gallium Phosphide Nanowires
Assali, S.; Zardo, I.; Plissard, S.; Kriegner, D.; Verheijen, M.A.; Bauer, G.; Meijerink, A.; Belabbes, A.; Bechstedt, F.; Haverkort, J.E.M.; Bakkers, E.P.A.M.
2013-01-01
The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a di