Photonic band gap of 2D complex lattice photonic crystal
Institute of Scientific and Technical Information of China (English)
GUAN Chun-ying; YUAN Li-bo
2009-01-01
It is of great significance to present a photonic crystal lattice structure with a wide photonic bandgap. A two-dimension complex lattice photonic crystal is proposed. The photonic crystal is composed of complex lattices with triangular structure, and each single cell is surrounded by six scatterers in an hexagon. The photonic band gaps are calculated based on the plane wave expansion (PWE) method. The results indicate that the photonic crystal has tunable large TM polarization band gap, and a gap-midgap ratio of up to 45.6%.
Maximizing the Optical Band Gap in 2D Photonic Crystals
DEFF Research Database (Denmark)
Hougaard, Kristian G.; Sigmund, Ole
Topology optimization is used to find the 2D photonic crystal designs with the largest relative photonic band gaps. Starting points for the topology optimization are found with an exhaustive binary search on a low resolution grid.......Topology optimization is used to find the 2D photonic crystal designs with the largest relative photonic band gaps. Starting points for the topology optimization are found with an exhaustive binary search on a low resolution grid....
Photonic band gap engineering in 2D photonic crystals
Indian Academy of Sciences (India)
Yogita Kalra; R K Sinha
2006-12-01
The polarization-dependent photonic band gaps (TM and TE polarizations) in two-dimensional photonic crystals with square lattices composed of air holes in dielectric and vice versa i.e., dielectric rods in air, using the plane-wave expansion method are investigated. We then study, how the photonic band gap size is affected by the changing ellipticity of the constituent air holes/dielectric rods. It is observed that the size of the photonic band gap changes with changing ellipticity of the constituent air holes/dielectric rods. Further, it is reported, how the photonic band gap size is affected by the change in the orientation of the constituent elliptical air holes/dielectric rods in 2D photonic crystals.
Absolute band gaps in two-dimensional graphite photonic crystal
Institute of Scientific and Technical Information of China (English)
Gaoxin Qiu(仇高新); Fanglei Lin(林芳蕾); Hua Wang(王华); Yongping Li(李永平)
2003-01-01
The off-plane propagation of electromagnetic (EM) waves in a two-dimensional (2D) graphite photoniccrystal structure was studied using transfer matrix method. Transmission spectra calculations indicatethat such a 2D structure has a common band gap from 0.202 to 0.2035 c/a for both H and E polarizationsand for all off-plane angles form 0° up to 90°. The presence of such an absolute band gap implies that 2Dgraphite photonic crystal, which is much easier and more feasible to fabricate, can exhibit some propertiesof a three-dimensional (3D) photonic crystal.
Tunable Photonic Band Gaps In Photonic Crystal Fibers Filled With a Cholesteric Liquid Crystal
Institute of Scientific and Technical Information of China (English)
Thomas; Tanggaard; Larsen; David; Sparre; Hermann; Anders; Bjarklev
2003-01-01
A photonic crystal fiber has been filled with a cholesteric liquid crystal. A temperature sensitive photonic band gap effect was observed, which was especially pronounced around the liquid crystal phase transition temperature.
Topological Design of Cellular Phononic Band Gap Crystals
Directory of Open Access Journals (Sweden)
Yang Fan Li
2016-03-01
Full Text Available This paper systematically investigated the topological design of cellular phononic crystals with a maximized gap size between two adjacent bands. Considering that the obtained structures may sustain a certain amount of static loadings, it is desirable to ensure the optimized designs to have a relatively high stiffness. To tackle this issue, we conducted a multiple objective optimization to maximize band gap size and bulk or shear modulus simultaneously with a prescribed volume fraction of solid material so that the resulting structures can be lightweight, as well. In particular, we first conducted the finite element analysis of the phononic band gap crystals and then adapted a very efficient optimization procedure to resolve this problem based on bi-directional evolutionary structure optimization (BESO algorithm in conjunction with the homogenization method. A number of optimization results for maximizing band gaps with bulk and shear modulus constraints are presented for out-of-plane and in-plane modes. Numerical results showed that the optimized structures are similar to those obtained for composite case, except that additional slim connections are added in the cellular case to support the propagation of shear wave modes and meanwhile to satisfy the prescribed bulk or shear modulus constraints.
Modeling of Photonic Band Gap Crystals and Applications
Energy Technology Data Exchange (ETDEWEB)
El-Kady, Ihab Fathy [Iowa State Univ., Ames, IA (United States)
2002-01-01
In this work, the authors have undertaken a theoretical approach to the complex problem of modeling the flow of electromagnetic waves in photonic crystals. The focus is to address the feasibility of using the exciting phenomena of photonic gaps (PBG) in actual applications. The authors start by providing analytical derivations of the computational electromagnetic methods used in their work. They also present a detailed explanation of the physics underlying each approach, as well as a comparative study of the strengths and weaknesses of each method. The Plane Wave expansion, Transfer Matrix, and Finite Difference time Domain Methods are addressed. They also introduce a new theoretical approach, the Modal Expansion Method. They then shift the attention to actual applications. They begin with a discussion of 2D photonic crystal wave guides. The structure addressed consists of a 2D hexagonal structure of air cylinders in a layered dielectric background. Comparison with the performance of a conventional guide is made, as well as suggestions for enhancing it. The studies provide an upper theoretical limit on the performance of such guides, as they assumed no crystal imperfections and non-absorbing media. Next, they study 3D metallic PBG materials at near infrared and optical wavelengths. The main objective is to study the importance of absorption in the metal and the suitability of observing photonic band gaps in such structures. They study simple cubic structures where the metallic scatters are either cubes or interconnected metallic rods. Several metals are studied (aluminum, gold, copper, and silver). The effect of topology is addressed and isolated metallic cubes are found to be less lossy than the connected rod structures. The results reveal that the best performance is obtained by choosing metals with a large negative real part of the dielectric function, together with a relatively small imaginary part. Finally, they point out a new direction in photonic crystal
Tolmachev, V; Perova, T; Moore, R
2005-10-17
A method of photonic band gap extension using mixing of periodic structures with two or more consecutively placed photonic crystals with different lattice constants is proposed. For the design of the structures with maximal photonic band gap extension the gap map imposition method is utilised. Optimal structures have been established and the gap map of photonic band gaps has been calculated at normal incidence of light for both small and large optical contrast and at oblique incidence of light for small optical contrast.
Institute of Scientific and Technical Information of China (English)
Jie Zha; Zhi-Yong Zhong; Huai-Wu Zhang; Qi-Ye Wen; Yuan-Xun Li
2009-01-01
Band gap characteristics of the photonic crystals in terahertz range with square lattice and triangular lattice of GaAs cylinders are comparatively studied by means of plane wave method (PWM). The influence of the radius on the band gap width is analyzed and the critical values where the band gap appears are put forward. The results show that themaximum band gap width of photonic crystal with triangular lattice of GaAs cylinders is much wider than that of photonic crystal with square lattice. The research provides a theoretic basis for the development of terahertz (THz) devices.
Gorelik, V. S.; Voinov, Yu. P.; Shchavlev, V. V.; Bi, Dongxue; Shang, Guo Liang; Fei, Guang Tao
2016-12-01
Mesoporous one-dimensional photonic crystals based on aluminum oxide have been synthesized by electrochemical etching method. Reflection spectra of the obtained mesoporous samples in a wide spectral range that covers several band gaps are presented. Microscopic parameters of photonic crystals are calculated and corresponding reflection spectra for the first six band gaps are presented.
Lamb wave band gaps in locally resonant phononic crystal strip waveguides
Energy Technology Data Exchange (ETDEWEB)
Yao, Yuanwei, E-mail: yaoyw@scut.edu.cn [Department of Physics, Guangdong University of Technology, Guangzhou 510006 (China); Wu, Fugen [Experiment and Educational Center, Guangdong University of Technology, Guangzhou 510006 (China); Zhang, Xin [Department of Physics, Guangdong University of Technology, Guangzhou 510006 (China); Hou, Zhilin [Department of Physics, South China University of Technology, Guangzhou 510640 (China)
2012-01-09
Using finite element method, we have made a theoretically study of the band structure of Lamb wave in a locally resonant phononic crystal strip waveguide with periodic soft rubber attached on the two sides of epoxy main plate. The numerical results show that the Lamb wave band gap based on local resonant mechanism can be opened up in the stub strip waveguides, and the width of the local resonant band gap is narrower than that based on the Bragg scattering mechanism. The results also show that the stub shape and width have influence on the frequency and width of the Lamb wave band gap. -- Highlights: ► The local resonant Lamb wave band gap can be opened up in a stub strip waveguides. ► The width of the local resonant band gap is narrower than that Bragg scattering band gap. ► The shape and width of the stub have strongly influence on the local resonant band gap.
Institute of Scientific and Technical Information of China (English)
Yongjun He(何拥军); Zhongchao Wei(韦中超); Yongchun Zhong(钟永春); Jianwei Diao(刁建伟); Hezhou Wang(汪河洲)
2004-01-01
Experimental results demonstrate that the band gap of colloidal suspension crystal changes with both the thickness of crystal and the dispersity of micro-spheres.As the thickness decreases,a red shift of band gap is observed,and there is a maximum of red shift.The values of the maximum red shifts are dependent on the standard deviations of micro-spheres.The experimental results are consistent with theoretical calculation.As the colloidal suspension crystal is assembled from micro-spheres with a standard deviation of 8.4% in a thick cell,an incident angles independent broadband is observed,which is explained as an amorphous structure.Two amorphous models are discussed.
Ultra-wide acoustic band gaps in pillar-based phononic crystal strips
Energy Technology Data Exchange (ETDEWEB)
Coffy, Etienne, E-mail: etienne.coffy@femto-st.fr; Lavergne, Thomas; Addouche, Mahmoud; Euphrasie, Sébastien; Vairac, Pascal; Khelif, Abdelkrim [FEMTO-ST Institute, Université de Franche-Comté, UBFC, CNRS, ENSMM, UTBM, 15B Av. des Montboucons, F-25030 Besançon (France)
2015-12-07
An original approach for designing a one dimensional phononic crystal strip with an ultra-wide band gap is presented. The strip consists of periodic pillars erected on a tailored beam, enabling the generation of a band gap that is due to both Bragg scattering and local resonances. The optimized combination of both effects results in the lowering and the widening of the main band gap, ultimately leading to a gap-to-midgap ratio of 138%. The design method used to improve the band gap width is based on the flattening of phononic bands and relies on the study of the modal energy distribution within the unit cell. The computed transmission through a finite number of periods corroborates the dispersion diagram. The strong attenuation, in excess of 150 dB for only five periods, highlights the interest of such ultra-wide band gap phononic crystal strips.
Research on the elastic wave band gaps of curved beam of phononic crystals
Energy Technology Data Exchange (ETDEWEB)
Shaogang, Liu; Shidan, Li; Haisheng, Shu, E-mail: shuhaisheng@hrbeu.edu.cn; Weiyuan, Wang; Dongyan, Shi; Liqiang, Dong; Hang, Lin; Wei, Liu
2015-01-15
Based on wave equations of Timoshenko curved beam, the theoretical derivation and numerical calculation of the behavior of in-plane and out-of-plane wave propagating in curved beam of phononic crystals (CBPC) are carried out using transfer matrix method combined with the Bloch theorem. Finite CBPC is also simulated by FEM method. It is shown that both in-plane and out-of-plane elastic waves band gaps exist in CBPC. Compared with equivalent straight beam of phononic crystals (SBPC), CBPC has some unique characteristics, such as the first complete in-plane band gap, special in-plane coupling band gap, and out-of-plane coupling band gap. In those band gaps, CBPC has a better property of vibration reduction than the equivalent SBPC in some ways. Furthermore, effects of curvature of CBPC on the in-plane and out-of-plane band gaps are discussed.
Band gap tunability of magneto-elastic phononic crystal
Bou Matar, O.; Robillard, J. F.; Vasseur, J. O.; Hladky-Hennion, A.-C.; Deymier, P. A.; Pernod, P.; Preobrazhensky, V.
2012-03-01
The possibility of control and tuning of the band structures of phononic crystals offered by the introduction of an active magnetoelastic material and the application of an external magnetic field is studied. Two means to obtain large elastic properties variations in magnetoelastic material are considered: Giant magnetostriction and spin reorientation transition effects. A plane wave expansion method is used to calculate the band structures. The magnetoelastic coupling is taken into account through the consideration of an equivalent piezomagnetic material model with elastic, piezomagnetic, and magnetic permeability tensors varying as a function of the amplitude and orientation of the applied magnetic field. Results of contactless tunability of the absolute bandgap are presented for a two-dimensional phononic crystal constituted of Terfenol-D square rod embedded in an epoxy matrix.
Alejo-Molina, Adalberto; Romero-Antequera, David L.; Sánchez-Mondragón, José J.
2014-02-01
In this work, we demonstrate the existence of structural metallic band gaps in a ternary material, dielectric-dielectric-metal, and we show analytical equations for their computation. We show the existence of metallic band gaps not only in the lowest band but also for high frequencies. These gaps are structural ones but different and additional to the dielectric ones in the dielectric photonic crystal substrate. Therefore, as the desire properties of both, the dielectric and metallic photonic crystals, are present the applications for this particular structure are straightforward.
Yudistira, D; Boes, A; Djafari-Rouhani, B; Pennec, Y; Yeo, L Y; Mitchell, A; Friend, J R
2014-11-21
We theoretically and experimentally demonstrate the existence of complete surface acoustic wave band gaps in surface phonon-polariton phononic crystals, in a completely monolithic structure formed from a two-dimensional honeycomb array of hexagonal shape domain-inverted inclusions in single crystal piezoelectric Z-cut lithium niobate. The band gaps appear at a frequency of about twice the Bragg band gap at the center of the Brillouin zone, formed through phonon-polariton coupling. The structure is mechanically, electromagnetically, and topographically homogeneous, without any physical alteration of the surface, offering an ideal platform for many acoustic wave applications for photonics, phononics, and microfluidics.
Study of periodic band gap structure of the magnetized plasma photonic crystals
Institute of Scientific and Technical Information of China (English)
ZHANG Hai-feng; MA Li; LIU Shao-bin
2009-01-01
The characteristics of the periodic band gaps of the one dimension magnetized plasma photonic crystals are studied with the piecewise linear current density recursive convolution (PLCDRC) finite-differential time-domain (FDTD) method. In fre-quency-domain, the transmission coefficients of electromagnetic Gaussian pulses are computed, and the effects of the periodic structure constant, plasma layer thickness and parameters of plasma on the properties of periodic band gaps of magnetized photonic crystals are analyzed. The results show that the periodic band gaps depend strongly on the plasma parameters.
Band Gap and Waveguide States in Two-Dimensional Disorder Phononic Crystals
Institute of Scientific and Technical Information of China (English)
LI Xiao-Chun; LIU Zheng-You; LIANG Hong-Yu; XIAO Qing-Wu
2006-01-01
@@ The influences of the configurational disorders on phononic band gaps and on waveguide modes are investigated for the two-dimensional phononic crystals consisting of water cylinders periodically arrayed in mercury. Two types of conflgurational disorders, relevant to the cylinder position and cylinder size respectively, are taken into account. It is found that the phononic band gap and the guide band are sensitive to the disorders, and generally become narrower with the increasing disorders. It is also found that the waveguide side walls without disorder can significantly prevent the guide modes in the waveguide from influence by the disorders in the crystals to a large amount.
Enhanced third-harmonic generation in photonic crystals at band-gap pumping
Yurchenko, Stanislav O.; Zaytsev, Kirill I.; Gorbunov, Evgeny A.; Yakovlev, Egor V.; Zotov, Arsen K.; Masalov, Vladimir M.; Emelchenko, Gennadi A.; Gorelik, Vladimir S.
2017-02-01
More than one order enhancement of third-harmonic generation is observed experimentally at band-gap pumping of globular photonic crystals. Due to a lateral modulation of the dielectric permittivity in two- and three-dimensional photonic crystals, sharp peaks of light intensity (light localization) arise in the media at the band-gap pumping. The light localization enhances significantly the nonlinear light conversion, in particular, third-harmonic generation, in the near-surface volume of photonic crystal. The observed way to enhance the nonlinear conversion can be useful for creation of novel compact elements of nonlinear and laser optics.
Huisman, Simon R; Woldering, Léon A; Leistikow, Merel D; Mosk, Allard P; Vos, Willem L
2010-01-01
We have studied the reflectivity of CMOS-compatible three-dimensional silicon inverse woodpile photonic crystals at near-infrared frequencies. Polarization-resolved reflectivity spectra were obtained from two orthogonal crystal surfaces corresponding to 1.88 pi sr solid angle. The spectra reveal broad peaks with high reflectivity up to 67 % that are independent of the spatial position on the crystals. The spectrally overlapping reflectivity peaks for all directions and polarizations form the signature of a broad photonic band gap with a relative bandwidth up to 16 %. This signature is supported with stopgaps in plane wave bandstructure calculations and with the frequency region of the expected band gap.
Two-Dimensional Phononic-Photonic Band Gap Optomechanical Crystal Cavity
Safavi-Naeini, Amir H.; Hill, Jeff T.; Meenehan, Seán; Chan, Jasper; Gröblacher, Simon; Painter, Oskar
2014-04-01
We present the fabrication and characterization of an artificial crystal structure formed from a thin film of silicon that has a full phononic band gap for microwave X-band phonons and a two-dimensional pseudo-band gap for near-infrared photons. An engineered defect in the crystal structure is used to localize optical and mechanical resonances in the band gap of the planar crystal. Two-tone optical spectroscopy is used to characterize the cavity system, showing a large coupling (g0/2π≈220 kHz) between the fundamental optical cavity resonance at ωo/2π =195 THz and colocalized mechanical resonances at frequency ωm/2π ≈9.3 GHz.
Accurate evaluation of lowest band gaps in ternary locally resonant phononic crystals
Institute of Scientific and Technical Information of China (English)
Wang Gang; Shao Li-Hui; Liu Yao-Zong; Wen Ji-Hong
2006-01-01
Based on a better understanding of the lattice vibration modes, two simple spring-mass models are constructed in order to evaluate the frequencies on both the lower and upper edges of the lowest locally resonant band gaps of the ternary locally resonant phononic crystals. The parameters of the models are given in a reasonable way based on the physical insight into the band gap mechanism. Both the lumped-mass methods and our models are used in the study of the influences of structural and the material parameters on frequencies on both edges of the lowest gaps in the ternary locally resonant phononic crystals. The analytical evaluations with our models and the theoretical predictions with the lumped-mass method are in good agreement with each other. The newly proposed heuristic models are helpful for a better understanding of the locally resonant band gap mechanism, as well as more accurate evaluation of the band edge frequencies.
Manipulating full photonic band gaps in two dimensional birefringent photonic crystals.
Proietti Zaccaria, Remo; Verma, Prabhat; Kawaguchi, Satoshi; Shoji, Satoru; Kawata, Satoshi
2008-09-15
The probability to realize a full photonic band gap in two-dimensional birefringent photonic crystals can be readily manipulated by introducing symmetry reduction or air holes in the crystal elements. The results lie in either creation of new band gaps or enlargement of existing band gaps. In particular, a combination of the two processes produces an effect much stronger than a simple summation of their individual contributions. Materials with both relatively low refractive index (rutile) and high refractive index (tellurium) were considered. The combined effect of introduction of symmetry reduction and air holes resulted in a maximum enlargement of the band gaps by 8.4% and 20.2%, respectively, for the two materials.
Transmission measurement of the photonic band gap of GaN photonic crystal slabs
Caro, J.; Roeling, E.M.; Rong, B.; Nguyen, H.M.; Van der Drift, E.W.J.M.; Rogge, S.; Karouta, F.; Van der Heijden, R.W.; Salemink, H.W.M.
2008-01-01
A high-contrast-ratio (30 dB) photonic band gap in the near-infrared transmission of hole-type GaN two-dimensional photonic crystals (PhCs) is reported. These crystals are deeply etched in a 650 nm thick GaN layer grown on sapphire. A comparison of the measured spectrum with finite difference time d
Modelling and design of complete photonic band gaps in two-dimensional photonic crystals
Indian Academy of Sciences (India)
Yogita Kalra; R K Sinha
2008-01-01
In this paper, we investigate the existence and variation of complete photonic band gap size with the introduction of asymmetry in the constituent dielectric rods with honeycomb lattices in two-dimensional photonic crystals (PhC) using the plane-wave expansion (PWE) method. Two examples, one consisting of elliptical rods and the other comprising of rectangular rods in honeycomb lattices are considered with a view to estimate the design parameters for maximizing the complete photonic band gap. Further, it has been shown that complete photonic band gap size changes with the variation in the orientation angle of the constituent dielectric rods.
Study on the vibration band gap and vibration attenuation property of phononic crystals
Institute of Scientific and Technical Information of China (English)
2008-01-01
Phononic crystals (PCs) are functional materials with periodic structures and elas- tic wave (vibration) band gaps, where propagation of vibrations with frequencies within band gaps is forbidden. PCs with finite periods can restrain the propagation of vibrations with frequencies in band gaps and thus has vibration attenuation property. Worldwide, many institutions and researchers are engaged in the re- search of PCs, however, studies on the vibration attenuation property of PCs are still limited. In this paper, we report our study of band gaps and vibration attenua- tion properties of 1) a simplified PC—periodic mass-spring structures, 2) longitu- dinal vibration of one-dimensional (1D-), 2D-, 3D-PCs, and 3) the flexural vibration of 1D- and 2D-PCs. These studies provide a foundation for the applications of PCs in vibration attenuation.
Study on the vibration band gap and vibration attenuation property of phononic crystals
Institute of Scientific and Technical Information of China (English)
无
2008-01-01
Phononic crystals (PCs) are functional materials with periodic structures and elastic wave (vibration) band gaps, where propagation of vibrations with frequencies within band gaps is forbidden. PCs with finite periods can restrain the propagation of vibrations with frequencies in band gaps and thus has vibration attenuation property. Worldwide, many institutions and researchers are engaged in the research of PCs, however, studies on the vibration attenuation property of PCs are still limited. In this paper, we report our study of band gaps and vibration attenuation properties of 1) a simplified PC-periodic mass-spring structures, 2) longitudinal vibration of one-dimensional (1D-), 2D-, 3D-PCs, and 3) the flexural vibration of 1D- and 2D-PCs. These studies provide a foundation for the applications of PCs in vibration attenuation.
Acoustic band gaps of the woodpile sonic crystal with the simple cubic lattice
Energy Technology Data Exchange (ETDEWEB)
Wu, Liang-Yu; Chen, Lien-Wen, E-mail: chenlw@mail.ncku.edu.t [Department of Mechanical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)
2011-02-02
This study theoretically and experimentally investigates the acoustic band gap of a three-dimensional woodpile sonic crystal. Such crystals are built by blocks or rods that are orthogonally stacked together. The adjacent layers are perpendicular to each other. The woodpile structure is embedded in air background. Their band structures and transmission spectra are calculated using the finite element method with a periodic boundary condition. The dependence of the band gap on the width of the stacked rods is discussed. The deaf bands in the band structure are observed by comparing with the calculated transmission spectra. The experimental transmission spectra for the {Gamma}-X and {Gamma}-X' directions are also presented. The calculated results are compared with the experimental results.
Band gap of two-dimensional fiber-air photonic crystals
Energy Technology Data Exchange (ETDEWEB)
Yang, Shu, E-mail: yangshu5678@163.com; Li, Masha
2016-04-15
A two-dimensional photonic crystal (PC) composed of textile fiber and air is initially discussed in this paper. Textile materials are so called soft materials, which are different from the previous PCs composed of rigid materials. The plain wave expansion method is used to calculate band structure of different PCs by altering component properties or structural parameters. Results show that the dielectric constant of textile fibers, fiber filling ratio and lattice arrangement are effective factors which influence PCs' band gap. Yet lattice constant and fiber diameter make inconspicuous influence on the band gap feature.
Wavelet-based method for computing elastic band gaps of one-dimensional phononic crystals
Institute of Scientific and Technical Information of China (English)
YAN; ZhiZhong; WANG; YueSheng
2007-01-01
A wavelet-based method was developed to compute elastic band gaps of one-dimensional phononic crystals. The wave field was expanded in the wavelet basis and an equivalent eigenvalue problem was derived in a matrix form involving the adaptive computation of integrals of the wavelets. The method was then applied to a binary system. For comparison, the elastic band gaps of the same one-di- mensional phononic crystals computed with the wavelet method and the well- known plane wave expansion (PWE) method are both presented in this paper. The numerical results of the two methods are in good agreement while the computation costs of the wavelet method are much lower than that of PWE method. In addition, the adaptability of wavelets makes the method possible for efficient band gap computation of more complex phononic structures.
Institute of Scientific and Technical Information of China (English)
Guo Ji-Yong; Chen Hong; Li Hong-Qiang; Zhang Ye-Wen
2008-01-01
We take a finite dielectric photonic crystal as a homogeneous slab and have extracted the effective parameters. Our systematic study shows that the effective permittivity or permeability of dielectric photonic crystal is negative within a band gap region. This means that the band gap might act as ε-negative materials (ENMs) with ε0, or μ-negative materials (MNMs) with ε>0 and μ<0. Moreover the effective parameters sensitively rely on size, surface termination, symmetry, etc. The effective parameters can be used to design full transmission tunnelling modes and amplify evanescent wave. Several cases are studied and the results show that dielectric photonic band gap can indeed mimic a single negative material (ENM or MNM) under some restrictions.
All-optical ultrafast switching of Si woodpile photonic band gap crystals
Euser, T G; Fleming, J G; Gralak, B; Polman, Albert; Vos, W L; Euser, Tijmen G.; Molenaar, Adriaan J.; Gralak, Boris; Polman, Albert; Vos, Willem L.
2006-01-01
We present ultrafast all-optical switching measurements of Si woodpile photonic band gap crystals at telecom frequencies. The crystals are homogeneously excited by a two-photon process. We probe the switching by measuring reflectivity over broad frequency ranges as a function of time. At short delay times, we observe that the photonic gap becomes narrower than in the unswitched case. After 1 ps, the complete gap has shifted to higher frequencies. This intricate behavior is the result of competing refractive index changes due to the electronic Kerr effect and to optically excited free carriers. The frequency shift of the band gap as a function of pump intensity agrees well with Fourier modal method calculations with no freely adjustable parameters.
Robust topology optimization of three-dimensional photonic-crystal band-gap structures
Men, Han; Freund, Robert M; Peraire, Jaime; Johnson, Steven G
2014-01-01
We perform full 3D topology optimization (in which "every voxel" of the unit cell is a degree of freedom) of photonic-crystal structures in order to find optimal omnidirectional band gaps for various symmetry groups, including fcc (including diamond), bcc, and simple-cubic lattices. Even without imposing the constraints of any fabrication process, the resulting optimal gaps are only slightly larger than previous hand designs, suggesting that current photonic crystals are nearly optimal in this respect. However, optimization can discover new structures, e.g. a new fcc structure with the same symmetry but slightly larger gap than the well known inverse opal, which may offer new degrees of freedom to future fabrication technologies. Furthermore, our band-gap optimization is an illustration of a computational approach to 3D dispersion engineering which is applicable to many other problems in optics, based on a novel semidefinite-program formulation for nonconvex eigenvalue optimization combined with other techniq...
Fabrication of Ceramic Layer-by-Layer Infrared Wavelength Photonic Band Gap Crystals
Energy Technology Data Exchange (ETDEWEB)
Kang, Henry Hao-Chuan [Iowa State Univ., Ames, IA (United States)
2004-12-19
Photonic band gap (PBG) crystals, also known as photonic crystals, are periodic dielectric structures which form a photonic band gap that prohibit the propagation of electromagnetic (EM) waves of certain frequencies at any incident angles. Photonic crystals have several potential applications including zero-threshold semiconductor lasers, the inhibition of spontaneous emission, dielectric mirrors, and wavelength filters. If defect states are introduced in the crystals, light can be guided from one location to another or even a sharp bending of light in micron scale can be achieved. This generates the potential for optical waveguide and optical circuits, which will contribute to the improvement in the fiber-optic communications and the development of high-speed computers.
Gorisse, M.; Benchabane, S.; Teissier, G.; Billard, C.; Reinhardt, A.; Laude, V.; Defaÿ, E.; Aïd, M.
2011-06-01
We report on the observation of elastic waves propagating in a two-dimensional phononic crystal composed of air holes drilled in an aluminum nitride membrane. The theoretical band structure indicates the existence of an acoustic band gap centered around 800 MHz with a relative bandwidth of 6.5% that is confirmed by gigahertz optical images of the surface displacement. Further electrical measurements and computation of the transmission reveal a much wider attenuation band that is explained by the deaf character of certain bands resulting from the orthogonality of their polarization with that of the source.
Photonic Band Gap Structures with Periodically Arranged Atoms in a Two-Dimensional Photonic Crystal
Institute of Scientific and Technical Information of China (English)
LI Zhi-Yu; CHEN Fang; ZHOU Jian-Ying
2005-01-01
@@ Linear transmission, reflection and absorption spectra for a new two-dimensional photonic crystal with periodically arranged resonant atoms are examined. Numerical results show that a twin-gap structure with forbidden bands displaced from a non-doped bandgap structure can be produced as a result of atomic polarization. The absorption spectrum is also significantly altered compared to the single atom entity.
Experimental investigation of hollow-core photonic crystal fibers with five photonic band-gaps
Institute of Scientific and Technical Information of China (English)
YUAN Jin-hui; HOU Lan-tian; WEI Dong-bin; WANG Hai-yun; ZHOU Gui-yao
2008-01-01
The hollow-core photonic crystal fibers (HC-PCFs) with integrity structure have been fabricated with an improved twice stack-and-draw technique. The transmission spectrum shows that five photonic band-gaps within 450-1100 nm have been obtained.And the green light transmission in the HC-PCFs'has been observed remarkably.
Reflectivity calculated for a 3D silicon photonic band gap crystal with finite support
Devashish, D; van der Vegt, J J W; Vos, Willem L
2016-01-01
We study numerically the reflectivity of three-dimensional (3D) photonic crystals with a complete 3D photonic band gap, with the aim to interpret recent experiments. We employ the finite element method to study crystals with the cubic diamond-like inverse woodpile structure. The high-index backbone has a dielectric function similar to silicon. We study crystals with a range of thicknesses up to ten unit cells ($L \\leq 10 c$). The crystals are surrounded by vacuum, and have a finite support as in experiments. The polarization-resolved reflectivity spectra reveal Fabry-P{\\'e}rot fringes related to standing waves in the finite crystal, as well as broad stop bands with nearly $100~\\%$ reflectivity, even for thin crystals. From the strong reflectivity peaks, it is inferred that the maximum reflectivity observed in experiments is not limited by finite size. The frequency ranges of the stop bands are in excellent agreement with stop gaps in the photonic band structure, that pertain to infinite and perfect crystals. ...
Fabrication of 3-D Photonic Band Gap Crystals Via Colloidal Self-Assembly
Subramaniam, Girija; Blank, Shannon
2005-01-01
The behavior of photons in a Photonic Crystals, PCs, is like that of electrons in a semiconductor in that, it prohibits light propagation over a band of frequencies, called Photonic Band Gap, PBG. Photons cannot exist in these band gaps like the forbidden bands of electrons. Thus, PCs lend themselves as potential candidates for devices based on the gap phenomenon. The popular research on PCs stem from their ability to confine light with minimal losses. Large scale 3-D PCs with a PBG in the visible or near infra red region will make optical transistors and sharp bent optical fibers. Efforts are directed to use PCs for information processing and it is not long before we can have optical integrated circuits in the place of electronic ones.
Generalized thermoelastic wave band gaps in phononic crystals without energy dissipation
Wu, Ying; Yu, Kaiping; Li, Xiao; Zhou, Haotian
2016-01-01
We present a theoretical investigation of the thermoelastic wave propagation in the phononic crystals in the context of Green-Nagdhi theory by taking thermoelastic coupling into account. The thermal field is assumed to be steady. Thermoelastic wave band structures of 3D and 2D are derived by using the plane wave expansion method. For the 2D problem, the anti-plane shear mode is not affected by the temperature difference. Thermoelastic wave bands of the in-plane x-y mode are calculated for lead/silicone rubber, aluminium/silicone rubber, and aurum/silicone rubber phononic crystals. The new findings in the numerical results indicate that the thermoelastic wave bands are composed of the pure elastic wave bands and the thermal wave bands, and that the thermal wave bands can serve as the low boundary of the first band gap when the filling ratio is low. In addition, for the lead/silicone rubber phononic crystals the effects of lattice type (square, rectangle, regular triangle, and hexagon) and inclusion shape (circle, oval, and square) on the normalized thermoelastic bandwidth and the upper/lower gap boundaries are analysed and discussed. It is concluded that their effects on the thermoelastic wave band structure are remarkable.
Single-Crystal Semiconductors with Narrow Band Gaps for Solar Water Splitting.
Wang, Tuo; Gong, Jinlong
2015-09-07
Solar water splitting provides a clean and renewable approach to produce hydrogen energy. In recent years, single-crystal semiconductors such as Si and InP with narrow band gaps have demonstrated excellent performance to drive the half reactions of water splitting through visible light due to their suitable band gaps and low bulk recombination. This Minireview describes recent research advances that successfully overcome the primary obstacles in using these semiconductors as photoelectrodes, including photocorrosion, sluggish reaction kinetics, low photovoltage, and unfavorable planar substrate surface. Surface modification strategies, such as surface protection, cocatalyst loading, surface energetics tuning, and surface texturization are highlighted as the solutions.
Complete Band-Gap in Two-Dimensional Quasiperiod Photonic Crystals with Hollow Cylinders
Institute of Scientific and Technical Information of China (English)
FENG Zhi-Fang; FENG Shuai; REN Kun; LI Zhi-Yuan; CHENG Bing-Ying; ZHANG Dao-Zhong
2005-01-01
@@ The transmission properties of quasiperiodic photonic crystals (QPCs) based on the random square-triangle tilingsystem are investigated by the multiple scattering method. The hollow cylinders are introduced in our calculation. It is found that QPCs with hollow cylinders also possess a complete band gap common to s- and p-polarized waves when the inner radius of hollow cylinders is larger than a certain value. The QPCs possessing the complete band gap can be applied to the fields of light emitting, wave-guides, optical filters, high-Q resonators and antennas.
Crystal structure and band gap of AlGaAsN
Munich, D. P.; Pierret, R. F.
1987-09-01
Quantum dielectric theory is applied to the quaternary alloy Al xGa 1- xAs 1- yN y to predict its electronic properties as a function of Al and N mole fractions. Results are presented for the expected crystal structure, minimum electron energy band gap, and direction in k-space of the band gap minimum for all x and y values. The results suggest that, for a proper choice of x and y, Al xGa 1- xAs 1- yN y could exhibit certain advantages over Al xGa 1- xAs when utilized in field-effect transistor structures.
Robust topology optimization of three-dimensional photonic-crystal band-gap structures.
Men, H; Lee, K Y K; Freund, R M; Peraire, J; Johnson, S G
2014-09-22
We perform full 3D topology optimization (in which "every voxel" of the unit cell is a degree of freedom) of photonic-crystal structures in order to find optimal omnidirectional band gaps for various symmetry groups, including fcc (including diamond), bcc, and simple-cubic lattices. Even without imposing the constraints of any fabrication process, the resulting optimal gaps are only slightly larger than previous hand designs, suggesting that current photonic crystals are nearly optimal in this respect. However, optimization can discover new structures, e.g. a new fcc structure with the same symmetry but slightly larger gap than the well known inverse opal, which may offer new degrees of freedom to future fabrication technologies. Furthermore, our band-gap optimization is an illustration of a computational approach to 3D dispersion engineering which is applicable to many other problems in optics, based on a novel semidefinite-program formulation for nonconvex eigenvalue optimization combined with other techniques such as a simple approach to impose symmetry constraints. We also demonstrate a technique for robust topology optimization, in which some uncertainty is included in each voxel and we optimize the worst-case gap, and we show that the resulting band gaps have increased robustness to systematic fabrication errors.
Synthesis and Band Gap Control in Three-Dimensional Polystyrene Opal Photonic Crystals
Institute of Scientific and Technical Information of China (English)
LIU Ye; ZHENG Zhong-Yu; QIN Fei; ZHOU Fei; ZHOU Chang-Zhu; ZHANG Dao-Zhong; MENG Qing-Bo; LI Zhi-Yuan
2008-01-01
High-quality three-dimensional polystyrene opal photonic crystals are fabricated by vertical deposition method.The transmission properties with different incident angles and different composite refractive index contrasts are experimentally and theoretically studied. Good agreement between the experiment and theory is achieved. We find that with the increasing incident angle, the gap position shifts to the short wavelength (blue shift) and the gap becomes shallower; and with the increase of refractive index of the opal void materials and decrease the contrast of refractive index, the gap position shifts to the long wavelength (red shift). At the same time, we observe the swelling effects when the sample is immerged in the solutions with different refractive indices, which make the microsphere diameter in solution become larger than that in air. The understanding of band gap shift behaviour may be helpful in designing optical sensors and tunable photonic crystal ultrafast optical switches.
Photonic Band Gaps in Two-Dimensional Crystals with Fractal Structure
Institute of Scientific and Technical Information of China (English)
刘征; 徐建军; 林志方
2003-01-01
We simulate the changes of the photonic band structure of the crystal in two dimensions with a quasi-fractal structure when it is fined to a fractal. The result shows that when the dielectric distribution is fined, the photonic band structure will be compressed on the whole and the ground photonic band gap (PBG) closed while the next PBGs shrunk, in conjunction with their position declining in the frequency spectrum. Furthermore, the PBGs in the high zone are much more sensitive than those in low zones.
Energy Technology Data Exchange (ETDEWEB)
Chen, Yihang, E-mail: eon.chen@yahoo.com.cn [Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China); Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou (China); Wang, Xinggang [Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou (China); Yong, Zehui; Zhang, Yunjuan [Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China); Chen, Zefeng [Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou (China); He, Lianxing; Lee, P.F.; Chan, Helen L.W.; Leung, Chi Wah [Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China); Wang, Yu, E-mail: apywang@inet.polyu.edu.hk [Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China)
2012-03-19
Composite right/left-handed transmission lines with lumped element series capacitors and shunt inductors are used to experimentally realize the one-dimensional photonic crystals composed of single-negative metamaterials. The simulated and experimental results show that a special photonic band gap corresponding to zero-effective-phase (zero-φ{sub eff}) may appear in the microwave regime. In contrast to the Bragg gap, by changing the length ratio of the two component materials, the width and depth of the zero-φ{sub eff} gap can be conveniently adjusted while keeping the center frequency constant. Furthermore, the zero-φ{sub eff} gap vanishes when both the phase-matching and impedance-matching conditions are satisfied simultaneously. These transmission line structures provide a good way for realizing microwave devices based on the zero-φ{sub eff} gap. -- Highlights: ► 1D photonic crystals with metamaterials were investigated experimentally. ► Both Bragg gap and zero-φ{sub eff} gap were observed in the microwave regime. ► The width and depth of the zero-φ{sub eff} gap were experimentally adjusted. ► Zero-φ{sub eff} gap was observed to be close when two match conditions were satisfied.
Direct band gap silicon crystals predicted by an inverse design method
Oh, Young Jun; Lee, In-Ho; Lee, Jooyoung; Kim, Sunghyun; Chang, Kee Joo
2015-03-01
Cubic diamond silicon has an indirect band gap and does not absorb or emit light as efficiently as other semiconductors with direct band gaps. Thus, searching for Si crystals with direct band gaps around 1.3 eV is important to realize efficient thin-film solar cells. In this work, we report various crystalline silicon allotropes with direct and quasi-direct band gaps, which are predicted by the inverse design method which combines a conformation space annealing algorithm for global optimization and first-principles density functional calculations. The predicted allotropes exhibit energies less than 0.3 eV per atom and good lattice matches, compared with the diamond structure. The structural stability is examined by performing finite-temperature ab initio molecular dynamics simulations and calculating the phonon spectra. The absorption spectra are obtained by solving the Bethe-Salpeter equation together with the quasiparticle G0W0 approximation. For several allotropes with the band gaps around 1 eV, photovoltaic efficiencies are comparable to those of best-known photovoltaic absorbers such as CuInSe2. This work is supported by the National Research Foundation of Korea (2005-0093845 and 2008-0061987), Samsung Science and Technology Foundation (SSTF-BA1401-08), KIAS Center for Advanced Computation, and KISTI (KSC-2013-C2-040).
Stable Band-Gaps in Phononic Crystals by Harnessing Hyperelastic Transformation Media
Liu, Yan; Feng, Xi-Qiao
2016-01-01
The band structure in phononic crystals (PCs) is usually affected by the deformations of their soft components. In this work, hyperelastic transformation media is proposed to be integrated in the PCs'design, to achieve stable elastic band-gaps which is independent with finite mechanical deformations. For a one-dimensional (1D) PC, we demonstrate the semi-linear soft component can keep all elastic wave bands unchanged with the external deformation field. While for neo-Hookean soft component, only S-wave bands can be precisely retained. The change of the P-wave bands can be predicted by using a lumped mass method. Numerical simulations are performed to validate our theory predictions and the robustness of the proposed PCs.
Tuning of band gaps for a two-dimensional piezoelectric phononic crystal with a rectangular lattice
Institute of Scientific and Technical Information of China (English)
Yize Wang; Fengming Li; Yuesheng Wang; Kikuo Kishimoto; Wenhu Huang
2009-01-01
In this paper, the elastic wave propagation in a two-dimensional piezoelectric phononic crystal is studied by considering the mechanic-electric coupling. The gener-alized eigenvalue equation is obtained by the relation of the mechanic and electric fields as well as the Bloch-Floquet the-orem. The band structures of both the in-plane and anti-plane modes are calculated for a rectangular lattice by the plane-wave expansion method. The effects of the lattice constant ratio and the piezoelectricity with different filling fractions are analyzed. The results show that the largest gap width is not always obtained for a square lattice. In some situations, a rectangular lattice may generate larger gaps. The band gap characteristics are influenced obviously by the piezoelectric-ity with the larger lattice constant ratios and the filling frac-tions.
Franklin, S.; Balasubramanian, T.; Nehru, K.; Kim, Youngmee
2009-06-01
The crystal structure of the title rac-propranolol salt, CHNO2+·NO3-, consists of two protonated propranolol residues and nitrate anions. Three virtually flat fragments, characteristics of most of the β-adrenolytics with oxy-methylene bridge are present in both the cations (A and B). The plane of the propranolol chain is twisted with respect to the plane of the aromatic ring in both the cations. Present study investigates the conformation and hydrogen bonding interactions, which play an important role in biological functions. A gauche conformation is observed for the oxo-methylene bridge of cation A, while a trans conformation prevails in cation B. These conformations are found in majority of β-blockers. Presence of twenty intermolecular hydrogen bonds mediating through the anions stabilizes the crystal packing. Vibration analysis and earlier theoretical predictions complement the structure analysed. From the UV-Vis spectral analysis for the crystal, the optical band gap is found to be Eg = 5.12 eV, where as the chloride salt has Eg = 3.81 eV. The increase in the band gap may be attributed by the increase in the number of intermolecular hydrogen bonds. Good optical transmittance in the entire visible region and the direct band gap property suggest that it is a suitable candidate for optical applications in UV region.
Analysis of band gap of non-bravais lattice photonic crystal fiber
Institute of Scientific and Technical Information of China (English)
Yichao MA; Heming CHEN
2009-01-01
This article designs a novel type ofnon-bravais lattice photonic crystal fiber. To form the nesting complexperiod with positive and negative refractive index materials respectively, a cylinder with the same radius and negative refractive index is introduced into the center of each lattice unit cell in the traditional square lattice air-holes photonic crystal fiber. The photonic band-gap of the photonic crystal fiber is calculated numerically by the plane wave expansion method. The result shows that compared with the traditional square photonic band-gap fiber (PBGF),when R/A is 0.35, the refractive index of the substrate, airhole, and medium-column are 1.30, 1.0, and -1.0,respectively. This new PBGF can transmit signal by the photonic band-gap effect. When the lattice constant Λvaries from 1.5 μm to 3.0 μm, the range of the wavelength ranges from 880 nm to 2300 nm.
Institute of Scientific and Technical Information of China (English)
无
2010-01-01
Absolute band gaps of a two-dimensional triangular-lattice photonic crystal are calculated with the finite-difference time-domain method in this paper.Through calculating the photonic band structures of the triangular-lattice photonic crystal consisting of Ge rods immersed in air with different shapes,it is found that a large absolute band gap of 0.098 (2c/a) can be obtained for the structures with hollow triangular Ge rods immersed in air,corresponding to 19.8% of the middle frequency.The influence of the different factors on the width of the absolute band gaps is also discussed.
Thermal tuning the reversible optical band gap of self-assembled polystyrene photonic crystals
Vakili Tahami, S. H.; Pourmahdian, S.; Shirkavand Hadavand, B.; Azizi, Z. S.; Tehranchi, M. M.
2016-11-01
Nano-sized polymeric colloidal particles could undergo self-organization into three-dimensional structures to produce desired optical properties. In this research, a facile emulsifier-free emulsion polymerization method was employed to synthesize highly mono-disperse sub-micron polystyrene colloids. A high quality photonic crystal (PhC) structure was prepared by colloidal polystyrene. The reversible thermal tuning effect on photonic band gap position as well as the attenuation of the band gap was investigated in detail. The position of PBG can be tuned from 420 nm to 400 nm by varying the temperature of the PhC structure, reversibly. This reversible effect provides a reconfigurable PhC structure which could be used as thermo-responsive shape memory polymers.
Photonic bands, gap maps, and intrinsic losses in three-component 2D photonic crystal slabs
Institute of Scientific and Technical Information of China (English)
Hongjun Shen; Huiping Tian; Yuefeng Ji
2009-01-01
We obtain the photonic bands and intrinsic losses for the triangular lattice three-component two-dimensional (2D) photonic crystal (PhC) slabs by expanding the electromagnetic field on the basis of waveguide modes of an effective homogeneous waveguide. The introduction of the third component into the 2D PhC slabs influences the photonic band structure and the intrinsic losses of the system. We ex-amine the dependences of the band gap width and gap edge position on the interlayer dielectric constant and interlayer thickness. It is found that the gap edges shift to lower frequencies and the intrinsic losses of each band decrease with the increasing interlayer thickness or dielectric constant. During the design of the real PhC system, the effect of unintentional native oxide surface layer on the optical properties of 2D PhC slabs has to be taken into consideration. At the same time, intentional oxidization of macroporous PhC structure can be utilized to optimize the design.
Band gap control in a line-defect magnonic crystal waveguide
Energy Technology Data Exchange (ETDEWEB)
Morozova, M. A., E-mail: mamorozovama@yandex.ru; Grishin, S. V.; Sadovnikov, A. V.; Romanenko, D. V.; Sharaevskii, Yu. P.; Nikitov, S. A. [Laboratory ' Metamaterials,' Saratov State University, Astrakhanskaya 83, Saratov 410012 (Russian Federation)
2015-12-14
We report on the experimental observation of the spin wave spectrum control in a line-defect magnonic crystal (MC) waveguide. We demonstrate the possibility to control the forbidden frequency band (band gap) for spin waves tuning the line-defect width. In particular, this frequency may be greater or lower than the one of 1D MC waveguide without line-defect. By means of space-resolved Brillouin light scattering technique, we study the localization of magnetization amplitude in the line-defect area. We show that the length of this localization region depends on the line-defect width. These results agree well with theoretical calculations of spin wave spectrum using the proposed model of two coupled magnonic crystal waveguides. The proposed simple geometry of MC with line-defect can be used as a logic and multiplexing block for application in the novel field of magnonic devices.
Directory of Open Access Journals (Sweden)
Xiao-Peng Wang
2015-10-01
Full Text Available In this paper, the tuning characteristics of band gaps and waveguides in a locally resonant phononic crystal structure, consisting of multiple square stubs deposited on a thin homogeneous plate, are investigated. Using the finite element method and supercell technique, the dispersion relationships and power transmission spectra of those structures are calculated. In contrast to a system of one square stub, systems of multiple square stubs show wide band gaps at lower frequencies and an increased quantity of band gaps at higher frequencies. The vibration modes of the band gap edges are analyzed to clarify the mechanism of the generation of the lowest band gap. Additionally, the influence of the stubs arrangement on the band gaps in multi-stub systems is investigated. The arrangements of the stubs were found to influence the band gaps; this is critical to understand for practical applications. Based on this finding, a novel method to form defect scatterers by changing the arrangement of square stubs in a multi-stub perfect phononic crystal plate was developed. Defect bands can be induced by creating defects inside the original complete band gaps. The frequency can then be tuned by changing the defect scatterers’ stub arrangement. These results will help in fabricating devices such as acoustic filters and waveguides whose band frequency can be modulated.
Self-imaging effect in photonic crystal multimode waveguides exhibiting no band gaps
Institute of Scientific and Technical Information of China (English)
Tianbao Yu; Xiaoqing Jiang; Qinghua Liao; Wei Qi; Jianyi Yang; Minghua Wang
2007-01-01
The properties of the propagating field in multimode photonic crystal waveguides (PCWs) exhibiting no photonic band gaps (PBGs) are investigated. The transmission spectrum shows that the input field can be guided with high efficiency, and resemble index-guided modes owing to the combination of total internal reflection (TIR) and distributed Bragg reflection (DBR). Self-imaging effect happens and the filling fraction determines the beating lengths. The rows of air holes decide DBR coming from the mirrors on both sides of the guiding region, which governs the transmission spectrum. It provides a new way to realize the components for both polarizations by combining PBG and TIR effects in PCWs.
Liquid-crystal photonic-band-gap materials the tunable electromagnetic vacuum
Busch, K
1999-01-01
We demonstrate that when an optically birefringent nematic liquid crystal is infiltrated into the void regions of an inverse opal, photonic-band-gap (PBG) material, the resulting composite material exhibits a completely tunable PBG. $9 In particular, the three- dimensional PBG can be completely opened or closed by applying an electric field which rotates the axis of the nematic molecules relative to the inverse opal backbone. Tunable light localization effects may $9 be realized by controlling the orientational disorder in the nematic. (28 refs).
Modulation of the Band Gaps of Phononic Crystals with Thermal Effects
Aly, Arafa H.; Mehaney, Ahmed
2015-11-01
Band gaps of elastic waves, both in-plane and shear waves, propagating through one-dimensional perfect/defect phononic crystals (PnCs) that involve thermal effects are studied in this paper. Based on the transfer matrix method and Bloch theory, the expressions of the reflection coefficients and dispersion relation are presented. Elastic waves localization is obtained by immersing a defect layer through a perfect structure. Compared with the periodic structure, we observed that defected PnCs introduced localized modes or peaks within the phononic band gaps. Hence, Numerical simulations are performed to investigate the influences of the defect layer thickness and type on the number and intensity of the localized modes. Moreover, we have observed that temperature changes have prominent effects on the localized modes and band gaps width, especially at plane wave propagation. Such effects could change thermal properties of the PnCs structure such as thermal conductivity and could control the thermal emission contributed by phonons in many engineering structures.
Institute of Scientific and Technical Information of China (English)
Wang Gang; Liu Yao-Zong; Wen Ji-Hong; Yu Dian-Long
2006-01-01
The low-frequency band gap and the corresponding vibration modes in two-dimensional ternary locally resonant phononic crystals are restudied successfully with the lumped-mass method. Compared with the work of C. Goffaux and J. Sanchez-Dehesa (Phys. Rev. B 67 14 4301(2003)), it is shown that there exists an error of about 50% in their calculated results of the band structure, and one band is missing in their results. Moreover, the in-plane modes shown in their paper are improper, which results in the wrong conclusion on the mechanism of the ternary locally resonant phononic crystals. Based on the lumped-mass method and better description of the vibration modes according to the band gaps, the locally resonant mechanism in forming the subfrequency gaps is thoroughly analysed. The rule used to judge whether a resonant mode in the phononic crystals can result in a corresponding subfrequency gap is also verified in this ternary case.
Wen, Feng; David, Sylvain; Checoury, Xavier; El Kurdi, Moustafa; Boucaud, Philippe
2008-08-04
Photonic crystals exhibiting a photonic band gap in both TE and TM polarizations are particularly interesting for a better control of light confinement. The simultaneous achievement of large band gaps in both polarizations requires to reduce the symmetry properties of the photonic crystal lattice. In this letter, we propose two different designs of two-dimensional photonic crystals patterned in high refractive index thin silicon slabs. These slabs are known to limit the opening of photonic band gaps for both polarizations. The proposed designs exhibit large complete photonic band gaps: the first photonic crystal structure is based on the honey-comb lattice with two different hole radii and the second structure is based on a "tri-ellipse" pattern in a triangular lattice. Photonic band gap calculations show that these structures offer large complete photonic band gaps deltaomega/omega larger than 10% between first and second photonic bands. This figure of merit is obtained with single-mode slab waveguides and is not restricted to modes below light cone.
Directory of Open Access Journals (Sweden)
Feroz A. Mir
2014-01-01
Full Text Available Recently, we carried out structural, optical and dielectric studies on micro-crystals of Oxypeucedanin (C16H14O5, isolated from the roots of plant Prangos pabularia (Mir et al. (2014 [3,4]. The obtained trend in frequency exponent (s with frequency (ω indicates that the universal dynamic response is followed by this compound. From optical absorption spectroscopy, the optical band gap (Eg was estimated around 3.76 eV and system is showing indirect allowed transition. Using Eg in certain relation of s, a close value of s (as much close obtained by fitting ac conductivity was obtained. This method was further used for other similar systems and again same trend was obtained. So a general conclusion was made that the high transmitting wide band insulators or semiconductors may follow bipolaron hopping transport mechanism.
Men, Han; Freund, Robert M; Parrilo, Pablo A; Peraire, Jaume
2009-01-01
In this paper, we consider the optimal design of photonic crystal band structures for two-dimensional square lattices. The mathematical formulation of the band gap optimization problem leads to an infinite-dimensional Hermitian eigenvalue optimization problem parametrized by the dielectric material and the wave vector. To make the problem tractable, the original eigenvalue problem is discretized using the finite element method into a series of finite-dimensional eigenvalue problems for multiple values of the wave vector parameter. The resulting optimization problem is large-scale and non-convex, with low regularity and non-differentiable objective. By restricting to appropriate eigenspaces, we reduce the large-scale non-convex optimization problem via reparametrization to a sequence of small-scale convex semidefinite programs (SDPs) for which modern SDP solvers can be efficiently applied. Numerical results are presented for both transverse magnetic (TM) and transverse electric (TE) polarizations at several fr...
A Study of Properties of the Photonic Band Gap of Unmagnetized Plasma Photonic Crystal
Institute of Scientific and Technical Information of China (English)
LIU Song; ZHONG Shuangying; LIU Sanqiu
2009-01-01
In this study,the propagation of electromagnetic waves in one-dimensional plasma photonic crystals(PPCs),namely,superlattice structures consisting alternately of a homogeneous unmagnetized plasma and dielectric material,is simulated numerically using the finite-difference time-domain(FDTD) algorithm.A perfectly matched layer (PML) absorbing technique is used in this simulation.The reflection and transmission coefficients of electromagnetic(EM)waves through PPCs are calculated.The characteristics of the photonic band gap(PBG)are discussed in terms of plasma density,dielectric constant ratios,number of periods,and introduced layer defect.These may provide some useful information for designing plasma photonic crystal devices.
Zaghdoudi, J.; Kuszelewicz, R.; Kanzari, M.; Rezig, B.
2008-04-01
Slow light offers many opportunities for photonic devices by increasing the effective interaction length of imposed refractive index changes. The slow wave effect in photonic crystals is based on their unique dispersive properties and thus entirely dielectric in nature. In this work we demonstrate an interesting opportunity to decrease drastically the group velocity of light in one-dimensional photonic crystals constructed form materials with large dielectric constant without dispersion). We use numerical analysis to study the photonic properties of periodic (Bragg mirror) and quasiperiodic one dimensional photonic crystals realized to engineer slow light effects. Various geometries of the photonic pattern have been characterized and their photonic band-gap structure analyzed. Indeed, one dimensional quasi periodic photonic multilayer structure based on Fibonacci, Thue-Morse, and Cantor sequences were studied. Quasiperiodic structures have a rich and highly fragmented reflectivity spectrum with many sharp resonant peaks that could be exploited in a microcavity system. A comparison of group velocity through periodic and quasiperiodic photonic crystals was discussed in the context of slow light propagation. The velocity control of pulses in materials is one of the promising applications of photonic crystals. The material systems used for the numerical analysis are TiO II/SiO II and Te/SiO II which have a refractive index contrast of approximately 1.59 and 3.17 respectively. The proposed structures were modelled using the Transfer Matrix Method.
Cassagne, D.
Photonic band gap materials Photonic band gap materials are periodic dielectric structures that control the propagation of electromagnetic waves. We describe the plane wave method, which allows to calculate the band structures of photonic crystals. By symmetry analysis and a perturbative approach, we predict the appearance of the low energy photonic band gaps of hexagonal structures. We propose new two-dimensional structures called graphite and boron nitride. Using a transfer matrix method, we calculate the transmission of the graphite structure and we show the crucial role of the coupling with external modes. We study the appearance of allowed modes in the photonic band gap by the introduction of localized defects in the periodicity. Finally, we discuss the properties of opals formed by self-organized silica microspheres, which are very promising for the fabrication of three-dimensional photonic crystals. Les matériaux à bandes interdites photoniques sont des structures diélectriques périodiques qui contrôlent la propagation des ondes électromagnétiques. Nous décrivons la méthode des ondes planes qui permet de calculer les structures de bandes des cristaux photoniques. Par une analyse de la symétrie et une approche perturbative, nous précisons les conditions d'existence des bandes interdites de basse énergie. Nous proposons de nouvelles structures bidimensionnelles appelées graphite et nitrure de bore. Grâce à une méthode de matrices de transfert, nous calculons la transmission de la structure graphite et nous mettons en évidence le rôle fondamental du couplage avec les modes extérieurs. Nous étudions l'apparition de modes permis dans la bande interdite grâce à l'introduction de défauts dans la périodicité. Enfin, nous discutons les propriétés des opales constituées de micro-billes de silice auto-organisées, qui sont très prometteuses pour la fabrication de cristaux photoniques tridimensionnels.
Zhou, Changjiang; Sai, Yi; Chen, Jiujiu
2016-09-01
This paper theoretically investigates the band gaps of Lamb mode waves in two-dimensional magnetoelastic phononic crystal slabs by an applied external magnetostatic field. With the assumption of uniformly oriented magnetization, an equivalent piezomagnetic material model is used. The effects of magnetostatic field on phononic crystals are considered carefully in this model. The numerical results indicate that the width of the first band gap is significantly changed by applying the external magnetic field with different amplitude, and the ratio between the maximum and minimum gap widths reaches 228%. Further calculations demonstrate that the orientation of the magnetic field obviously affects the width and location of the first band gap. The contactless tunability of the proposed phononic crystal slabs shows many potential applications of vibration isolation in engineering.
Photonic band gaps in quasiperiodic photonic crystals with negative refractive index
Vasconcelos, M. S.; Mauriz, P. W.; de Medeiros, F. F.; Albuquerque, E. L.
2007-10-01
We investigate the photonic band gaps in quasiperiodic photonic crystals made up of both positive (SiO2) and negative refractive index materials using a theoretical model based on a transfer matrix treatment. The quasiperiodic structures are characterized by the nature of their Fourier spectrum, which can be dense pure point (Fibonacci sequences) or singular continuous (Thue-Morse and double-period sequences). These substitutional sequences are described in terms of a series of generations that obey peculiar recursion relations. We discussed the photonic band gap spectra for both the ideal cases, where the negative refractive index material can be approximated as a constant in the frequency range considered, as well as the more realistic case, taking into account the frequency-dependent electric permittivity γ and magnetic permeability μ . We also present a quantitative analysis of the results, pointing out the distribution of the allowed photonic bandwidths for high generations, which gives a good insight about their localization and power laws.
Simultaneous existence of phononic and photonic band gaps in periodic crystal slabs.
Pennec, Y; Djafari Rouhani, B; El Boudouti, E H; Li, C; El Hassouani, Y; Vasseur, J O; Papanikolaou, N; Benchabane, S; Laude, V; Martinez, A
2010-06-21
We discuss the simultaneous existence of phononic and photonic band gaps in a periodic array of holes drilled in a Si membrane. We investigate in detail both the centered square lattice and the boron nitride (BN) lattice with two atoms per unit cell which include the simple square, triangular and honeycomb lattices as particular cases. We show that complete phononic and photonic band gaps can be obtained from the honeycomb lattice as well as BN lattices close to honeycomb. Otherwise, all investigated structures present the possibility of a complete phononic gap together with a photonic band gap of a given symmetry, odd or even, depending on the geometrical parameters.
Silica photonic crystals with quasi-full band gap in the visible region prepared in ethanol
Institute of Scientific and Technical Information of China (English)
ZHANG Hui; WANG Xidong; ZHAO Xiaofeng; LI Wenchao; TANG Qing
2003-01-01
Monodisperse silica spheres of 252 nm with a standard deviation of 5.7% are prepared by Stber method. By comparison of both of media, ethanol instead of water is used to assemble opal, and the artificial opal has been prepared by the sedimentation in ethanol of silica spheres. The structure of the opal prepared has been examined and discussed. The results show that the artificial opal has a structure similar to the face-centered cubic (fcc) type packed system with silica spheres. Transmission measurements of the artificial opal have been conducted, which shows that the artificial opal is quasi-full band gap silica photonic crystals in the visible region.
Band Gap Computation of Two Dimensional Photonic Crystal for High Index Contrast Grating Application
Directory of Open Access Journals (Sweden)
Gagandeep Kaur
2014-05-01
Full Text Available Two Dimensional Photonic Crystal (PHc is convenient type of PHc, It refers to the fact that the dielectric is periodic in Two directions. The study of photonic structure by a simulation method is extremely momentous. At optical frequencies the optical density contained by two dimensional PHc changes periodically. They have the property to strong effect the propagation of light waves at these optical frequencies. A typical linearization method which solves the common nonlinear Eigen values difficulties has been used to achieve structures of the photonic band. There are two method plane wave expansion method (PWE and Finite Difference Time Domain method (FDTD. These Methods are most widely used for band gap calculation of PHc’s. FDTD Method has more smoothness and directness and can be explored effortlessly for simulation of the field circulation inside the photonic structure than PWE method so we have used FDTD Method for Two dimensional PHc’s calculation. In simulation of Two Dimensional band structures, silicon material has 0.543nm lattice constant and 1.46refractive index.
Optimization of band gaps of 2D photonic crystals by the rapid generic algorithm
Institute of Scientific and Technical Information of China (English)
SUN Yun-tao
2011-01-01
@@ Based on the rapid genetic algorithm (RGA), the band gap structures of square lattices with square scatters are optimized.In the optimizing process, gene codes are used to express square scatters and the fitting function adopts the relative values of the largest absolute photonic band gaps (PBGs).By changing the value of filling factor, three cell forms with large photonic band gaps are obtained.In addition, the comparison between the rapid genetic algorithm and the general genetic algorithm (GGA) is analyzed.
Zero- n bar band gap in two-dimensional metamaterial photonic crystals
Mejía-Salazar, J. R.; Porras-Montenegro, N.
2015-04-01
We have theoretically studied metamaterial photonic crystals (PCs) composed by air and double negative (DNG) material. Numerical data were obtained by means of the finite difference time-domain (FDTD) method, with results indicating the possibility for the existence of the zero- n bar non-Bragg gap in two-dimensional metamaterial PCs, which has been previously observed only in one-dimensional photonic superlattices. Validity of the present FDTD algorithm for the study of one-dimensional metamaterial PCs is shown by comparing with results for the transmittance spectra obtained by means of the well known transfer matrix method (TMM). In the case of two-dimensional metamaterial PCs, we have calculated the photonic band structure (PBS) in the limiting case of a one-dimensional photonic superlattice and for a nearly one-dimensional PC, showing a very similar dispersion relation. Finally, we show that due to the strong electromagnetic field localization on the constitutive rods, the zero- n bar non-Bragg gap may only exist in two-dimensional systems under strict geometrical conditions.
Crystal structure re-investigation in wide band gap CIGSe compounds
Energy Technology Data Exchange (ETDEWEB)
Souilah, M. [Institut des Materiaux Jean Rouxel, Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP 32229, 44322 Nantes Cedex 03 (France)], E-mail: marc.souilah@cnrs-imn.fr; Rocquefelte, X.; Lafond, A.; Guillot-Deudon, C. [Institut des Materiaux Jean Rouxel, Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP 32229, 44322 Nantes Cedex 03 (France); Morniroli, J.-P. [Laboratoire de Metallurgie Physique et Genie des Materiaux, UMR CNRS 8517, USTL and ENSCL, Bat C6, Cite Scientifique, 59655 Villeneuve d' Ascq Cedex (France); Kessler, J. [Institut des Materiaux Jean Rouxel, Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP 32229, 44322 Nantes Cedex 03 (France)
2009-02-02
There is agreement in the literature that Cu(In{sub 1} {sub -} {sub x}Ga{sub x})Se{sub 2} (CIGSe) absorber used in solar cells has an optimum composition (x {approx} 0.3) corresponding to a band gap (1.1-1.2 eV) far below the theoretical value giving the maximum (1.4-1.5 eV). This paper presents a re-investigation of the crystal structure of bulk CIGSe compounds for both stoichiometric and Cu-poor compositions. Regardless of the gallium content, all the stoichiometric compounds are found to adopt the well-known chalcopyrite structure (space group I-42d) while a modification of the structure is evidenced for the high Ga-content Cu-poor compounds. The X-ray diffraction analyses demonstrate that the crystal structure of Cu{sub 0.743}In{sub 0.543} Ga{sub 0.543}Se{sub 2} is derived from that of the stannite structure (space-group I-42m). Ab-initio calculations show a strong dependence of the electronic structure near the Fermi level with the copper content. Such modifications are expected to significantly change the optical properties of Cu-poor CIGSe materials.
Singh, Bipin K.; Kumar, Pawan; Pandey, Praveen C.
2014-12-01
We have demonstrated control of the photonic band gaps (PBGs) in 1-D photonic crystals using linear graded index material. The analysis of PBG has been done in THz region by considering photonic crystals in the form of ten periods of second, third and fourth generation of the Fibonacci sequence as unit cell. The unit cells are constituted of two kinds of layers; one is taken of linear graded index material and other of normal dielectric material. For this investigation, we used a theoretical model based on transfer matrix method. We have obtained a large number of PBGs and their bandwidths can be tuned by changing the grading profile and thicknesses of linear graded index layers. The number of PBGs increases with increase in the thicknesses of layers and their bandwidths can be controlled by the contrast of initial and final refractive index of the graded layers. In this way, we provide more design freedom for photonic devices such as reflectors, filters, optical sensors, couplers, etc.
Chemical Vapor Deposition of Monolayer Mo(1-x)W(x)S2 Crystals with Tunable Band Gaps.
Wang, Ziqian; Liu, Pan; Ito, Yoshikazu; Ning, Shoucong; Tan, Yongwen; Fujita, Takeshi; Hirata, Akihiko; Chen, Mingwei
2016-02-22
Band gap engineering of monolayer transition metal dichalcogenides, such as MoS2 and WS2, is essential for the applications of the two-dimensional (2D) crystals in electronic and optoelectronic devices. Although it is known that chemical mixture can evidently change the band gaps of alloyed Mo(1-x)W(x)S2 crystals, the successful growth of Mo(1-x)W(x)S2 monolayers with tunable Mo/W ratios has not been realized by conventional chemical vapor deposition. Herein, we developed a low-pressure chemical vapor deposition (LP-CVD) method to grow monolayer Mo(1-x)W(x)S2 (x = 0-1) 2D crystals with a wide range of Mo/W ratios. Raman spectroscopy and high-resolution transmission electron microscopy demonstrate the homogeneous mixture of Mo and W in the 2D alloys. Photoluminescence measurements show that the optical band gaps of the monolayer Mo(1-x)W(x)S2 crystals strongly depend on the Mo/W ratios and continuously tunable band gap can be achieved by controlling the W or Mo portion by the LP-CVD.
DEFF Research Database (Denmark)
Borel, Peter Ingo; Frandsen, Lars Hagedorn; Thorhauge, Morten;
2003-01-01
We have investigated the properties of TM polarized light in planar photonic crystal waveguide structures, which exhibit photonic band gaps for TE polarized light. Straight and bent photonic crystal waveguides and couplers have been fabricated in silicon-on-insulator material and modelled using a 3...... in a simple photonic crystal coupler with a size of ~ 20 m × 20 m. These promising features may open for the realization of ultra-compact photonic crystal components, which are easily integrated in optical communication networks....
Wang, X. P.; Jiang, P.; Song, A. L.
2016-09-01
In this paper, the low-frequency and tuning characteristic of band gap in a two-dimensional phononic crystal structure, consisting of a square array of aluminum cylindrical stubs deposited on both sides of a thin rubber plate with slit structure, are investigated. Using the finite element method, the dispersion relationships and power transmission spectra of this structure are calculated. In contrast to a typical phononic crystal without slit structure, the proposed slit structure shows band gaps at lower frequencies. The vibration modes of the band gap edges are analyzed to clarify the mechanism of the lowest band gaps. Additionally, the influence of the slit parameters and stub parameters on the band gaps in slit structure are investigated. The geometrical parameters of the slits and stubs were found to influence the band gaps; this is critical to understand for practical applications. These results will help in fabricating phononic crystal structures whose band frequency can be modulated at lower frequencies.
Topologically evolved photonic crystals: breaking the world record in band gap size
Bilal, Osama R.; El-Beltagy, Mohammed A.; Hussein, Mahmoud I.
2012-04-01
Using topology optimization, a photonic crystal (PtC) unit cell can be designed to exhibit favorable electromagnetic wave propagation properties. Among these is the opening of a band gap (BG) with the largest possible ratio of width to midgap frequency. In this paper the aim is to maximize the relative size of the first and fourth relative BGs of two-dimensional (2D) PtCs with a square lattice configuration. In addition, we examine the effects of the degree of unit cell symmetry on the relative BG size and on the geometric traits of the optimized topologies. We use a specialized genetic algorithm (GA) for our search. The results show that the type of symmetry constraint imposed has a significant, and rather subtle, effect on the unit cell topology and BG size of the emerging optimal designs. In pursuit of record values of BG size, we report two low-symmetry unit cells as an outcome of our search efforts to date: one with a relative BG size of 46% for TE waves and the other with a relative BG size of 47% for TM waves.
Wu, Songtao; Zhu, Gaohua; Zhang, Jin S; Banerjee, Debasish; Bass, Jay D; Ling, Chen; Yano, Kazuhisa
2014-05-21
We report anisotropic expansion of self-assembled colloidal polystyrene-poly(dimethylsiloxane) crystals and its impact on the phonon band structure at hypersonic frequencies. The structural expansion was achieved by a multistep infiltration-polymerization process. Such a process expands the interplanar lattice distance 17% after 8 cycles whereas the in-plane distance remains unaffected. The variation of hypersonic phonon band structure induced by the anisotropic lattice expansion was recorded by Brillouin measurements. In the sample before expansion, a phononic band gap between 3.7 and 4.4 GHz is observed; after 17% structural expansion, the gap is shifted to a lower frequency between 3.5 and 4.0 GHz. This study offers a facile approach to control the macroscopic structure of colloidal crystals with great potential in designing tunable phononic devices.
Design of a 3D photonic band gap cavity in a diamond-like inverse woodpile photonic crystal
Woldering, Léon A; Vos, Willem L
2014-01-01
We theoretically investigate the design of cavities in a three-dimensional (3D) inverse woodpile photonic crystal. This class of cubic diamond-like crystals has a very broad photonic band gap and consists of two perpendicular arrays of pores with a rectangular structure. The point defect that acts as a cavity is centred on the intersection of two intersecting perpendicular pores with a radius that differs from the ones in the bulk of the crystal. We have performed supercell bandstructure calculations with up to $5 \\times 5 \\times 5$ unit cells. We find that up to five isolated and dispersionless bands appear within the 3D photonic band gap. For each isolated band, the electric-field energy is localized in a volume centred on the point defect, hence the point defect acts as a 3D photonic band gap cavity. The mode volume of the cavities resonances is as small as 0.8 $\\lambda^{3}$ (resonance wavelength cubed), indicating a strong confinement of the light. By varying the radius of the defect pores we found that o...
Ultrawide low frequency band gap of phononic crystal in nacreous composite material
Energy Technology Data Exchange (ETDEWEB)
Yin, J.; Huang, J.; Zhang, S., E-mail: zhangs@dlut.edu.cn; Zhang, H.W.; Chen, B.S.
2014-06-27
The band structure of a nacreous composite material is studied by two proposed models, where an ultrawide low frequency band gap is observed. The first model (tension-shear chain model) with two phases including brick and mortar is investigated to describe the wave propagation in the nacreous composite material, and the dispersion relation is calculated by transfer matrix method and Bloch theorem. The results show that the frequency ranges of the pass bands are quite narrow, because a special tension-shear chain motion in the nacreous composite material is formed by some very slow modes. Furthermore, the second model (two-dimensional finite element model) is presented to investigate its band gap by a multi-level substructure scheme. Our findings will be of great value to the design and synthesis of vibration isolation materials in a wide and low frequency range. Finally, the transmission characteristics are calculated to verify the results. - Highlights: • A Brick-and-Mortar structure is used to discuss wave propagation through nacreous materials. • A 1D Bloch wave solution of nacreous materials with a tension-shear chain model is obtained. • The band structure and transmission characteristics of nacreous materials with the FE model are examined. • An ultrawide low frequency band gap is found in nacreous materials with both theory and FE model.
Energy Technology Data Exchange (ETDEWEB)
Li, Yinggang [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China); School of Transportation, Wuhan University of Technology, Wuhan 430070 (China); Chen, Tianning [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China); Wang, Xiaopeng, E-mail: xpwang@mail.xjtu.edu.cn [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China); Li, Suobin [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China)
2015-11-01
In this paper, we present the theoretical investigation of Lamb wave propagation in one-dimensional radial phononic crystal (RPC) plates with periodic double-sided corrugations. The dispersion relations, the power transmission spectra, and the displacement fields of the eigenmodes are studied by using the finite element method based on two-dimensional axial symmetry models in cylindrical coordinates. Numerical results show that the proposed RPC plates with periodic double-sided corrugations can yield several band gaps with a variable bandwidth for Lamb waves. The formation mechanism of band gaps in the double-sided RPC plates is attributed to the coupling between the Lamb modes and the in-phase and out-phases resonant eigenmodes of the double-sided corrugations. We investigate the evolution of band gaps in the double-sided RPC plates with the corrugation heights on both sides arranged from an asymmetrical distribution to a symmetrical distribution gradually. Significantly, with the introduction of symmetric double-sided corrugations, the antisymmetric Lamb mode is suppressed by the in-phase resonant eigenmodes of the double-sided corrugations, resulting in the disappearance of the lowest band gap. Furthermore, the effects of the geometrical parameters on the band gaps are further explored numerically.
Crystal growth and characterization of the narrow-band-gap semiconductors OsPn₂ (Pn = P, As, Sb).
Bugaris, Daniel E; Malliakas, Christos D; Shoemaker, Daniel P; Do, Dat T; Chung, Duck Young; Mahanti, Subhendra D; Kanatzidis, Mercouri G
2014-09-15
Using metal fluxes, crystals of the binary osmium dipnictides OsPn2 (Pn = P, As, Sb) have been grown for the first time. Single-crystal X-ray diffraction confirms that these compounds crystallize in the marcasite structure type with orthorhombic space group Pnnm. The structure is a three-dimensional framework of corner- and edge-sharing OsPn6 octahedra, as well as [Pn2(4-)] anions. Raman spectroscopy shows the presence of P-P single bonds, consistent with the presence of [Pn2(-4)] anions and formally Os(4+) cations. Optical-band-gap and high-temperature electrical resistivity measurements indicate that these materials are narrow-band-gap semiconductors. The experimentally determined Seebeck coefficients reveal that nominally undoped OsP2 and OsSb2 are n-type semiconductors, whereas OsAs2 is p-type. Electronic band structure using density functional theory calculations shows that these compounds are indirect narrow-band-gap semiconductors. The bonding p orbitals associated with the Pn2 dimer are below the Fermi energy, and the corresponding antibonding states are above, consistent with a Pn-Pn single bond. Thermopower calculations using Boltzmann transport theory and constant relaxation time approximation show that these materials are potentially good thermoelectrics, in agreement with experiment.
Woldering, Léon A.; Mosk, Allard P.; Vos, Willem L.
2014-09-01
We theoretically investigate the design of cavities in a three-dimensional (3D) inverse woodpile photonic crystal. This class of cubic diamondlike crystals has a very broad photonic band gap and consists of two perpendicular arrays of pores with a rectangular structure. The point defect that acts as a cavity is centered on the intersection of two intersecting perpendicular pores with a radius that differs from the ones in the bulk of the crystal. We have performed supercell band structure calculations with up to 5×5×5 unit cells. We find that up to five isolated and dispersionless bands appear within the 3D photonic band gap. For each isolated band, the electric-field energy is localized in a volume centered on the point defect, hence the point defect acts as a 3D photonic band gap cavity. The mode volume of the cavities resonances is as small as 0.8 λ3 (resonance wavelength cubed), indicating a strong confinement of the light. By varying the radius of the defect pores we found that only donorlike resonances appear for smaller defect radius, whereas no acceptorlike resonances appear for greater defect radius. From a 3D plot of the distribution of the electric-field energy density we conclude that peaks of energy are found in sharp edges situated at the point defect, similar to how electrons collect at such features. This is different from what is observed for cavities in noninverted woodpile structures. Since inverse woodpile crystals can be fabricated from silicon by CMOS-compatible means, we project that single cavities and even cavity arrays can be realized, for wavelength ranges compatible with telecommunication windows in the near infrared.
Energy Technology Data Exchange (ETDEWEB)
Zhang, Hai-Feng, E-mail: hanlor@163.com [Key Laboratory of Radar Imaging and Microwave Photonics, Ministry of Education, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Nanjing Artillery Academy, Nanjing 211132 (China); Liu, Shao-Bin; Li, Bing-Xiang [Key Laboratory of Radar Imaging and Microwave Photonics, Ministry of Education, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)
2016-01-15
The properties of omnidirectional photonic band gaps (OBGs) in two-dimensional plasma photonic crystals (2D PPCs) are theoretically investigated by the modified plane wave expansion method. In the simulation, we consider the off-plane incident wave vector. The configuration of 2D PPCs is the triangular lattices filled with the nonmagnetized plasma cylinders in the homogeneous and isotropic dielectric background. The calculated results show that the proposed 2D PPCs possess a flatbands region and the OBGs. Compared with the OBGs in the conventional 2D dielectric-air PCs, it can be obtained more easily and enlarged in the 2D PPCs with a similar structure. The effects of configurational parameters of the PPCs on the OBGs also are studied. The simulated results demonstrate that the locations of OBGs can be tuned easily by manipulating those parameters except for changing plasma collision frequency. The achieved OBGs can be enlarged by optimizations. The OBGs of two novel configurations of PPCs with different cross sections are computed for a comparison. Both configurations have the advantages of obtaining the larger OBGs compared with the conventional configuration, since the symmetry of 2D PPCs is broken by different sizes of periodically inserted plasma cylinders or connected by the embedded plasma cylinders with thin veins. The analysis of the results shows that the bandwidths of OBGs can be tuned by changing geometric and physical parameters of such two PPCs structures. The theoretical results may open a new scope for designing the omnidirectional reflectors or mirrors based on the 2D PPCs.
Zero permeability and zero permittivity band gaps in 1D metamaterial photonic crystals
Energy Technology Data Exchange (ETDEWEB)
Depine, Ricardo A. [Grupo de Electromagnetismo Aplicado, Departamento de Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon I, C1428EHA Buenos Aires (Argentina); Martinez-Ricci, Maria L. [Grupo de Electromagnetismo Aplicado, Departamento de Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon I, C1428EHA Buenos Aires (Argentina); Monsoriu, Juan A. [Departamento de Fisica Aplicada, Universidad Politecnica de Valencia, 46022 Valencia (Spain)]. E-mail: jmonsori@fis.upv.es; Silvestre, Enrique [Departamento de Optica, Universidad de Valencia, 46100 Burjassot (Spain); Andres, Pedro [Departamento de Optica, Universidad de Valencia, 46100 Burjassot (Spain)
2007-04-30
We consider layered heterostructures combining ordinary positive index materials and dispersive metamaterials. We show that these structures can exhibit a new type of photonic gap around frequencies where either the magnetic permeability {mu} or the electric permittivity {epsilon} of the metamaterial is zero. Although the interface of a semi-infinite medium with zero refractive index (a condition attained either when {mu}=0 or when {epsilon}=0) is known to give full reflectivity for all incident polarizations, here we show that a gap corresponding to {mu}=0 occurs only for TE polarized waves, whereas a gap corresponding to {epsilon}=0 occurs only for TM polarized waves. These band gaps are scale-length invariant and very robust against disorder, although they may disappear for the particular case of propagation along the stratification direction.
Crystal Structure and Band Gap Engineering in Polyoxometalate-Based Inorganic-Organic Hybrids.
Roy, Soumyabrata; Sarkar, Sumanta; Pan, Jaysree; Waghmare, Umesh V; Dhanya, R; Narayana, Chandrabhas; Peter, Sebastian C
2016-04-04
We have demonstrated engineering of the electronic band gap of the hybrid materials based on POMs (polyoxometalates), by controlling its structural complexity through variation in the conditions of synthesis. The pH- and temperature-dependent studies give a clear insight into how these experimental factors affect the overall hybrid structure and its properties. Our structural manipulations have been successful in effectively tuning the optical band gap and electronic band structure of this kind of hybrids, which can find many applications in the field of photovoltaic and semiconducting devices. We have also addressed a common crystallographic disorder observed in Keggin-ion (one type of heteropolyoxometalate [POMs])-based hybrid materials. Through a combination of crystallographic, spectroscopic, and theoretical analysis of four new POM-based hybrids synthesized with tactically varied reaction conditions, we trace the origin and nature of the disorder associated with it and the subtle local structural coordination involved in its core picture. While the crystallography yields a centrosymmetric structure with planar coordination of Si, our analysis with XPS, IR, and Raman spectroscopy reveals a tetrahedral coordination with broken inversion symmetry, corroborated by first-principles calculations.
Institute of Scientific and Technical Information of China (English)
Yuan Jin-Hui; Sang Xin-Zhu; Yu Chong-Xiu; Xin Xiang-Jun; Zhang Jin-Long; Zhou Gui-Yao; Li Shu-Guang; Hou Lan-Tian
2011-01-01
With the full-vector plane-wave method (FVPWM) and the full-vector beam propagation method (FVBPM), the dependences of the band-gap and mode characteristics on material index and cladding structure parameter in anti-resonance guiding photonic crystal fibres (ARGPCFs) are sufficiently analysed. An ARGPCF operating in the near-infrared wavelength is shown. The influences of the high index cylinders, glass interstitial apexes and silica structure on the characteristics of band-gaps and modes are deeply investigated. The equivalent planar waveguide theory is used for analysing such an ARGPCF filled by the isotropic materials, and the resonance and the anti-resonance characteristics can be well predicted.
Band gap structures in two-dimensional super porous phononic crystals.
Liu, Ying; Sun, Xiu-zhan; Chen, Shao-ting
2013-02-01
As one kind of new linear cellular alloys (LCAs), Kagome honeycombs, which are constituted by triangular and hexagonal cells, attract great attention due to the excellent performance compared to the ordinary ones. Instead of mechanical investigation, the in-plane elastic wave dispersion in Kagome structures are analyzed in this paper aiming to the multi-functional application of the materials. Firstly, the band structures in the common two-dimensional (2D) porous phononic structures (triangular or hexagonal honeycombs) are discussed. Then, based on these results, the wave dispersion in Kagome honeycombs is given. Through the component cell porosity controlling, the effects of component cells on the whole responses of the structures are investigated. The intrinsic relation between the component cell porosity and the critical porosity of Kagome honeycombs is established. These results will provide an important guidance in the band structure design of super porous phononic crystals.
Broadening of Omnidirectional Photonic Band Gap in Graphene Based one Dimensional Photonic Crystals
Directory of Open Access Journals (Sweden)
Neetika Arora
2015-09-01
Full Text Available A simple design of one dimensional gradual stacked photonic crystal has been proposed. This structure exhibits a periodic array of alternate layers of Graphene and Silica. These are the materials of low and high refractive indices respectively. Here the structure considered has three stacks .Each stack has five alternate layers of Graphene and silica. The transfer matrix method has been used for numerical computation. In this paper, such a structure has wider reflection bands in comparison to a conventional dielectric PC structure and structure with Sio2 and Si layers for a constant gradual constant ϒ at different incident angle.
Fathollahi Khalkhali, T.; Bananej, A.
2016-12-01
In this study, we analyze complete photonic band gap properties of two-dimensional dielectric-plasma photonic crystals with triangular and square lattices, composed of plasma rods with different geometrical shapes in the anisotropic tellurium background. Using the finite-difference time-domain method we discuss the maximization of the complete photonic band gap width as a function of plasma frequency and plasma rods parameters with different shapes and orientations. The numerical results demonstrate that our proposed structures represent significantly wide complete photonic band gaps in comparison to previously studied dielectric-plasma photonic crystals.
Zhu, Dapeng; Liu, Guolei; Xiao, Shuqin; Yan, Shishen; He, Shumin; Cai, Li; Li, Qinghao; Cao, Qiang; Hu, Shujun; Chen, Yanxue; Kang, Shishou; Mei, Liangmo
2013-05-01
Epitaxial (Zn1-xMgx)1-yMnyO thin films were grown on c-Al2O3 substrates by radio frequency oxygen plasma assisted molecular beam epitaxy. Single crystal structure of the (Zn1-xMgx)1-yMnyO films was revealed by reflection high energy electron diffraction and X-ray diffraction. The band gap of the films can be tuned dramatically with increasing the Mg concentration, while the onset energy of Mn-related mid-gap absorption band only shows a small blue shift. Photoconductivity measurements indicate the Mn-related mid-gap states in (Zn1-xMgx)1-yMnyO films can create free carriers and contribute to charge transfer transitions. The conduction band offset ΔEC = 0.13 eV and valence band offset ΔEV = 0.1 eV were obtained for ZnO/Zn0.8Mg0.2O heterostructures, which increase to ΔEC = 0.21 eV and ΔEV = 0.14 eV for ZnO/Zn0.7Mg0.3O heterostructures.
Energy Technology Data Exchange (ETDEWEB)
Zhang Haifeng [College of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Nanjing Artillery Academy, Nanjing 211132 (China); Liu Shaobin [College of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); State Key Laboratory of Millimeter Waves of Southeast University, Nanjing Jiangsu 210096 (China); Kong Xiangkun; Bian Borui; Dai Yi [College of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)
2012-11-15
In this paper, an omnidirectional photonic band gap realized by one-dimensional ternary unmagnetized plasma photonic crystals based on a new Fibonacci quasiperiodic structure, which is composed of homogeneous unmagnetized plasma and two kinds of isotropic dielectric, is theoretically studied by the transfer matrix method. It has been shown that such an omnidirectional photonic band gap originates from Bragg gap in contrast to zero-n gap or single negative (negative permittivity or negative permeability) gap, and it is insensitive to the incidence angle and the polarization of electromagnetic wave. From the numerical results, the frequency range and central frequency of omnidirectional photonic band gap can be tuned by the thickness and density of the plasma but cease to change with increasing Fibonacci order. The bandwidth of omnidirectional photonic band gap can be notably enlarged. Moreover, the plasma collision frequency has no effect on the bandwidth of omnidirectional photonic band gap. It is shown that such new structure Fibonacci quasiperiodic one-dimensional ternary plasma photonic crystals have a superior feature in the enhancement of frequency range of omnidirectional photonic band gap compared with the conventional ternary and conventional Fibonacci quasiperiodic ternary plasma photonic crystals.
Liu, Rongqiang; Zhao, Haojiang; Zhang, Yingying; Guo, Honghwei; Deng, Zongquan
2015-12-01
The plane wave expansion (PWE) method is used to calculate the band gaps of two-dimensional (2D) phononic crystals (PCs) with a hybrid square-like (HSL) lattice. Band structures of both XY-mode and Z-mode are calculated. Numerical results show that the band gaps between any two bands could be maximized by altering the radius ratio of the inclusions at different positions. By comparing with square lattice and bathroom lattice, the HSL lattice is more efficient in creating larger gaps.
The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals
Mudd, G. W.; Molas, M. R.; Chen, X.; Zólyomi, V.; Nogajewski, K.; Kudrynskyi, Z. R.; Kovalyuk, Z. D.; Yusa, G.; Makarovsky, O.; Eaves, L.; Potemski, M.; Fal’Ko, V. I.; Patanè, A.
2016-12-01
The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate the metal chalcogenide InSe, a recent addition to the family of vdW layered crystals, which transforms from a direct to an indirect band gap semiconductor as the number of layers is reduced. We investigate this direct-to-indirect bandgap crossover, demonstrate a highly tuneable optical response from the near infrared to the visible spectrum with decreasing layer thickness down to 2 layers, and report quantum dot-like optical emissions distributed over a wide range of energy. Our analysis also indicates that electron and exciton effective masses are weakly dependent on the layer thickness and are significantly smaller than in other vdW crystals. These properties are unprecedented within the large family of vdW crystals and demonstrate the potential of InSe for electronic and photonic technologies.
One-Dimensional Anisotropic Band Gap Structure
Institute of Scientific and Technical Information of China (English)
无
2000-01-01
The band gap structure of one-dimensional anisotropic photonic crystal has been studied by means of the transfer matrix formalism. From the analytic expressions and numeric calculations we see some general characteristics of the band gap structure of anisotropic photonic crystals, each band separates into two branches and the two branches react to polarization sensitively. In the practical case of oblique incidence, gaps move towards high frequency when the angle of incidence increases. Under some special conditions, the two branches become degenerate again.
Sarantopoulou, E.; Kollia, Z.; Cefalas, A. C.; Semashko, V. V.; Yu. Abdulsabirov, R.; Naumov, A. K.; Korableva, S. L.; Szczurek, T.; Kobe, S.; McGuiness, P. J.
2002-07-01
The absorption and the laser-induced fluorescence spectra of Pr 3+ ion in YF 3, LaF 3, KY 3 F 10 and LiLuF 4, single crystal hosts were obtained in the vacuum ultraviolet region of the spectrum. The energy position and the spacing of the levels of the 4f 5d electronic configuration depend on the host matrix. In addition, strong vacuum ultraviolet emission bands were observed, following crystal excitation at 157 nm with the molecular fluorine laser. The emission bands were due to the interconfigurational 4 f 5 d→4 f2 dipole-allowed transitions in Pr 3+ ions, and they were assigned to the transitions between the edge of the lowest Stark component of the 4f 5d electronic configuration and the levels of the 4f 2 electronic configuration. The VUV spectra can be interpreted by applying the crystal field model, and taking into consideration that lanthanide contraction of the 4f n-1 5d electronic configurations of the rare earth ions, and shielding of the positive ion charge from the electrons in the 4f n electronic configuration is taking place. Finally, a new method for monitoring the concentration of the rare earth ions in wide band gap fluoride dielectric crystals in a non-destructive way, by measuring magnetic dipole moments with the vibrating sample magnetometer (VSM) method, is presented for the first time to our knowledge for this type of crystals.
A 1D Optomechanical crystal with a complete phononic band gap
Gomis-Bresco, J; Oudich, M; El-Jallal, S; Griol, A; Puerto, D; Chavez, E; Pennec, Y; Djafari-Rouhani, B; Alzina, F; Martínez, A; Torres, C M Sotomayor
2014-01-01
Recent years have witnessed the boom of cavity optomechanics, which exploits the confinement and coupling of optical waves and mechanical vibrations at the nanoscale. Amongst the different physical implementations,optomechanical (OM) crystals built on semiconductor slabs are particularly interesting since they enable the integration and manipulation of multiple OM elements in a single chip and provide GHz phonons suitable for coherent phonon manipulation. Different demonstrations of coupling of infrared photons and GHz phonons in cavities created by inserting defects on OM crystals have been performed. However, the considered structures do not show a complete phononic bandgap at the frequencies of interest, which in principle should allow longer dephasing time, since acoustic leakage is minimized. In this work we demonstrate the excitation of acoustic modes in a 1D OM crystal properly designed to display a full phononic bandgap for acoustic modes at about 4 GHz. The confined phonons have an OM coupling rangin...
Zakhidov, A. A.; Baughman, R. H.; Iqbal, Z.; Khayrullin, I. I.; Ralchenko, V. G.
1998-03-01
We demonstrate a new method for the formation of photonic bandgap crystals that operate at optical wavelengths. This method involves the templating of a self-assempled SiO2 lattice with diamond, graphite, or amorphous forms of carbon, followed by the removal of the original SiO2 lattice matrix by chemical means. Such carbon opal replicas are the "air type" of photonic crystal (where air replaces silica spheres) that are most favourable for photonic bandgap formation. Surprisingly, the structure of the original opal lattice having a typical cubic lattice dimension of 250 nm) is reliably replicated down to the nanometer scale using either a diamond, graphite, or amorphous carbon templated material. The optical properties of these photonic bandgap crystals are reported and compared with both theory and experimental results on other types of opal-derived lattices that we have investigated. The graphitic reverse opal is the first example of a network type metallic photonic crystal for the optical domain, for which a large photonic bandgap have been predicted.
Crystal-field investigations of rare-earth-doped wide band gap semiconductors
Muller, S; Wahl, U
Crystal field investigations play a central role in the studies of rare earth doped semiconductors. Optical stark level spectroscopy and lattice location studies of radioactive rare earth isotopes implanted at ISOLDE have provided important insight into these systems during the last years. It has been shown that despite a major site preference of the probe atoms in the lattice, several defect configurations do exist. These sites are visible in the optical spectra but their origin and nature aren't deducible from these spectra alone. Hyperfine measurements on the other hand should reveal these defect configurations and yield the parameters necessary for a description of the optical properties at the atomic scale. In order to study the crystal field with this alternative approach, we propose a new concept for perturbed $\\gamma\\gamma$-angular correlation (PAC) experiments at ISOLDE based on digital signal processing in contrast to earlier analog setups. The general functionality of the spectrometer is explained ...
Marichy, Catherine; Froufe-Pérez, Luis S; Scheffold, Frank
2015-01-01
Photonic crystal materials are based on a periodic modulation of the dielectric constant on length scales comparable to the wavelength of light. These materials can exhibit photonic band gaps; frequency regions for which the propagation of electromagnetic radiation is forbidden due to the depletion of the density of states. In order to exhibit a full band gap, 3D PCs must present a threshold refractive index contrast that depends on the crystal structure. In the case of the so-called woodpile photonic crystals this threshold is comparably low, approximately 1.9 for the direct structure. Therefore direct or inverted woodpiles made of high refractive index materials like silicon, germanium or titanium dioxide are sought after. Here we show that, by combining multiphoton lithography and atomic layer deposition, we can achieve a direct inversion of polymer templates into TiO$_{2}$ based photonic crystals. The obtained structures show remarkable optical properties in the near-infrared region with almost perfect sp...
Energy Technology Data Exchange (ETDEWEB)
Li, Suobin; Chen, Tianning [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Wang, Xiaopeng, E-mail: xpwang@mail.xjtu.edu.cn [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Li, Yinggang [Key Laboratory of High Performance Ship Technology of Ministry of Education, Wuhan University of Technology, Wuhan, 430070 (China); Chen, Weihua [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China)
2016-06-03
We studied the expansion of locally resonant complete band gaps in two-dimensional phononic crystals (PCs) using a double-sided stubbed composite PC plate with composite stubs. Results show that the introduction of the proposed structure gives rise to a significant expansion of the relative bandwidth by a factor of 1.5 and decreases the opening location of the first complete band gap by a factor of 3 compared to the classic double-sided stubbed PC plate with composite stubs. Furthermore, more band gaps appear in the lower-frequency range (0.006). These phenomena can be attributed to the strong coupling between the “analogous rigid mode” of the stub and the anti-symmetric Lamb modes of the plate. The “analogous rigid mode” of the stub is produced by strengthening the localized resonance effect of the composite plates through the double-sided stubs, and is further strengthened through the introduction of composite stubs. The “analogous rigid mode” of the stubs expands the out-of-plane band gap, which overlaps with in-plane band gap in the lower-frequency range. As a result, the complete band gap is expanded and more complete band gaps appear. - Highlights: • Expansion of lower-frequency locally resonant BGs using novel composite phononic crystals plates. • The proposed structure expands the relative bandwidth 1.5 times compared to classic doubled-sided stubbed PC plates. • The opening location of the first complete BG decreases 3 times compared to the classic doubled-sided stubbed PC plates. • The concept “analogous rigid mode” is put forward to explain the expansion of lower-frequency BGs.
Carter, Robin; Suyetin, Mikhail; Lister, Samantha; Dyson, M Adam; Trewhitt, Harrison; Goel, Sanam; Liu, Zheng; Suenaga, Kazu; Giusca, Cristina; Kashtiban, Reza J; Hutchison, John L; Dore, John C; Bell, Gavin R; Bichoutskaia, Elena; Sloan, Jeremy
2014-05-28
In common with rocksalt-type alkali halide phases and also semiconductors such as GeTe and SnTe, SnSe forms all-surface two atom-thick low dimensional crystals when encapsulated within single walled nanotubes (SWNTs) with diameters below ∼1.4 nm. Whereas previous density functional theory (DFT) studies indicate that optimised low-dimensional trigonal HgTe changes from a semi-metal to a semi-conductor, low-dimensional SnSe crystals typically undergo band-gap expansion. In slightly wider diameter SWNTs (∼1.4-1.6 nm), we observe that three atom thick low dimensional SnSe crystals undergo a previously unobserved form of a shear inversion phase change resulting in two discrete strain states in a section of curved nanotube. Under low-voltage (i.e. 80-100 kV) imaging conditions in a transmission electron microscope, encapsulated SnSe crystals undergo longitudinal and rotational oscillations, possibly as a result of the increase in the inelastic scattering cross-section of the sample at those voltages.
Energy Technology Data Exchange (ETDEWEB)
He, Chongjun, E-mail: hechongjun@nuaa.edu.cn [College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211106 (China); Deng, Chenguang; Wang, Jiming; Gu, Xiaorong; Wu, Tong [College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211106 (China); Zhu, Kongjun [State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Liu, Youwen, E-mail: ywliu@nuaa.edu.cn [College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211106 (China); Key Laboratory of Radar Imaging and Microwave Photonics, Ministry of Education, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)
2016-02-15
Optical transmittance spectra of lead-free ferroelectric (1−x)Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}–xBaTiO{sub 3} (NBT–xBT) single crystals poled along different directions have been studied comprehensively. After poled along [001] direction, the transmittance of tetragonal NBT–8%BT crystal is about 70%, which is much higher than that of NBT–2%BT crystal with rhombohedral structure and NBT–5%BT crystal with morphotropic phase boundary (MPB) composition. However, after poled [111] direction, the transmittance of tetragonal NBT–8%BT crystal is the smallest among them. These properties are manifest in view of the crystal structure. Both direct and indirect optical energy band gaps, as well phonon energies were obtained from absorption coefficient spectra by Tauc equations. The band gaps of [001]-poled NBT–xBT crystals increase with BT content, yet the [111]-poled crystals have opposite trends.
Park, Byoungchoo; Kim, Mi-Na; Kim, Sun Woong; Ho Park, Jin
2008-09-15
We studied 1-dimensional (1-D) photonic crystal (PC) films with three alternating layers to investigate multi-mode photonic band-gaps (PBGs) at red, green, and blue color regions. From simulations, it was shown that PCs with three alternating layered elements of [a/b/c] structure have sharp PBGs at the three color regions with the central wavelengths of 459 nm, 527 nm, and 626 nm, simultaneously. Experimentally, it was proven that red, green, and blue PBGs were generated clearly by the PCs, which were made of multilayers of [SiO(2)/Ta(2)O(5)/TiO(2)], based on the simulation. It was also shown that the measured wavelengths of the PBGs corresponded exactly to those of the simulated results. Moreover, it was demonstrated that a 1-D PC of [a/b/c] structure can be used for making white organic light emitting devices (OLEDs) with improved color rendering index (CRI) for color display or lighting.
Bi-directional evolutionary optimization for photonic band gap structures
Energy Technology Data Exchange (ETDEWEB)
Meng, Fei [Centre for Innovative Structures and Materials, School of Civil, Environmental and Chemical Engineering, RMIT University, GPO Box 2476, Melbourne, VIC 3001 (Australia); School of Civil Engineering, Central South University, Changsha 410075 (China); Huang, Xiaodong, E-mail: huang.xiaodong@rmit.edu.au [Centre for Innovative Structures and Materials, School of Civil, Environmental and Chemical Engineering, RMIT University, GPO Box 2476, Melbourne, VIC 3001 (Australia); Key Laboratory of Advanced Technology for Vehicle Body Design & Manufacture, Hunan University, Changsha, 410082 (China); Jia, Baohua [Centre for Micro-Photonics, Faculty of Engineering & Industrial Science, Swinburne University of Technology, PO Box 218, Hawthorn, VIC 3122 (Australia)
2015-12-01
Toward an efficient and easy-implement optimization for photonic band gap structures, this paper extends the bi-directional evolutionary structural optimization (BESO) method for maximizing photonic band gaps. Photonic crystals are assumed to be periodically composed of two dielectric materials with the different permittivity. Based on the finite element analysis and sensitivity analysis, BESO starts from a simple initial design without any band gap and gradually re-distributes dielectric materials within the unit cell so that the resulting photonic crystal possesses a maximum band gap between two specified adjacent bands. Numerical examples demonstrated the proposed optimization algorithm can successfully obtain the band gaps from the first to the tenth band for both transverse magnetic and electric polarizations. Some optimized photonic crystals exhibit novel patterns markedly different from traditional designs of photonic crystals.
Institute of Scientific and Technical Information of China (English)
胡晓颖; 郭晓霞; 胡文弢; 呼和满都拉; 郑晓霞; 荆丽丽
2015-01-01
用改进的平面波展开法数值计算了正方形散射体三角排列的二维磁振子晶体当散射体旋转时的带结构。结果显示，同样的填充率下，旋转正方柱散射体可以在新的频率范围内打开更多的带隙，或者使低频带隙加宽。说明旋转散射体可以有效地优化带隙。%Recently, magnonic crystals which are the magnetic counterparts of photonic crystals or phononic crystals are becoming a hot area of research. In this paper, band structure of two-dimensional magnotic crystal composed of square rods triangularly arranged are calculated by using the plane-wave expansion method. Spin-wave band structures of two-dimensional magnonic crystal composed of Fe triangularly arranged Fe in an EuO matrix. The results show that when the filling ratio f =0.4, only two absolute band gaps can be found in the case of θ =0◦. The first gap appears between the first band and the second band, the second gap between the sixth band and the seventh band. However, the number of band gaps can be improved by rotating the square rods through θ =25◦, there are eight absolute band gaps that can be found. The first gap appears between the first band and the second band, the fifth gap between the sixth band and the seventh band. The new band gaps can be found, the second gap appears between the third band and the fourth band, the third gap between the fourth band and the fifth band, the fourth gap between the fifth band and the sixth band, the sixth gap between the seventh band and the eighth band, the seventh gap between the eighth band and the ninth band, the eighth gap between the ninth band and the tenth band. These results show that it is possible to create spin-wave gaps by rotating square rods in a two-dimensional magnotic crystal. The numerical results of the normalized gap width ∆Ω/Ωg of the first gap between the first band and the second band always changes with filling fraction f and rotational angles θ. When f
Microstrip microwave band gap structures
Indian Academy of Sciences (India)
V Subramanian
2008-04-01
Microwave band gap structures exhibit certain stop band characteristics based on the periodicity, impedance contrast and effective refractive index contrast. These structures though formed in one-, two- and three-dimensional periodicity, are huge in size. In this paper, microstrip-based microwave band gap structures are formed by removing the substrate material in a periodic manner. This paper also demonstrates that these structures can serve as a non-destructive characterization tool for materials, a duplexor and frequency selective coupler. The paper presents both experimental results and theoretical simulation based on a commercially available finite element methodology for comparison.
Formation of Degenerate Band Gaps in Layered Systems
Directory of Open Access Journals (Sweden)
Alexey P. Vinogradov
2012-06-01
Full Text Available In the review, peculiarities of spectra of one-dimensional photonic crystals made of anisotropic and/or magnetooptic materials are considered. The attention is focused on band gaps of a special type—the so called degenerate band gaps which are degenerate with respect to polarization. Mechanisms of formation and properties of these band gaps are analyzed. Peculiarities of spectra of photonic crystals that arise due to the linkage between band gaps are discussed. Particularly, it is shown that formation of a frozen mode is caused by linkage between Brillouin and degenerate band gaps. Also, existence of the optical Borrmann effect at the boundaries of degenerate band gaps and optical Tamm states at the frequencies of degenerate band gaps are analyzed.
Yater, J. E.; Shaw, J. L.; Pate, B. B.; Feygelson, T. I.
2016-02-01
Secondary-electron-emission (SEE) current measured from high-purity, single-crystal (100) chemical-vapor-deposited diamond is found to increase when sub-band gap (3.06 eV) photons are incident on the hydrogenated surface. Although the light does not produce photoemission directly, the SEE current increases by more than a factor of 2 before saturating with increasing laser power. In energy distribution curves (EDCs), the emission peak shows a corresponding increase in intensity with increasing laser power. However, the emission-onset energy in the EDCs remains constant, indicating that the bands are pinned at the surface. On the other hand, changes are observed on the high-energy side of the distribution as the laser power increases, with a well-defined shoulder becoming more pronounced. From an analysis of this feature in the EDCs, it is deduced that upward band bending is present in the near-surface region during the SEE measurements and this band bending suppresses the SEE yield. However, sub-band gap photon illumination reduces the band bending and thereby increases the SEE current. Because the bands are pinned at the surface, we conclude that the changes in the band levels occur below the surface in the electron transport region. Sample heating produces similar effects as observed with sub-band gap photon illumination, namely, an increase in SEE current and a reduction in band bending. However, the upward band bending is not fully removed by either increasing laser power or temperature, and a minimum band bending of ˜0.8 eV is established in both cases. The sub-band gap photo-excitation mechanism is under further investigation, although it appears likely at present that defect or gap states play a role in the photo-enhanced SEE process. In the meantime, the study demonstrates the ability of visible light to modify the electronic properties of diamond and enhance the emission capabilities, which may have potential impact for diamond-based vacuum electron
Analysis on Band Gaps of MCM-41 Type of Materials
Institute of Scientific and Technical Information of China (English)
HAN Pei-de; LIANG Jian; XU Bing-she; LIU Xu-guang; PENG Lian-mao
2004-01-01
The concept and analysis method of photonic crystals and band gaps are introduced into one-dimensional(1D) ordered mesoporous materials. MCM-41 type of materials are treated theoretically as photonic crystals. The formation of band gaps is exhibited and confirmed by a calculation of transfer matrix technique. PBG was found around 9-42 nm in soft X-ray region. The photonic band-gap was predicted to be dependent on incident direction, pore size and lattice constant. The mesoporous materials with different pore sizes and different lattice constants have different band-gap widths.
DEFF Research Database (Denmark)
1999-01-01
An optical fibre having a periodicidal cladding structure provididing a photonic band gap structure with superior qualities. The periodical structure being one wherein high index areas are defined and wherein these are separated using a number of methods. One such method is the introduction...
Dong, L.; Alpay, S. P.
2011-07-01
The electrical properties, the spontaneous polarization, and the piezoelectric response of ZnO can be tailored by alloying ZnO with BeO for applications such as electrodes in flat panel displays and solar cells, blue and ultraviolet (UV) light emitting devices, and highly sensitive UV detectors. We present here the results of a study that employs density-functional theory to analyze the crystal structure, the band structure, spontaneous polarization, and piezoelectric properties of Zn1-xBexO solid solutions. Our findings indicate that Zn1-xBexO alloys may have a different crystal structure than the end components ZnO and BeO that crystallize in the prototypical wurtzite structure (P63mc). It is shown that orthorhombic lattices with Pmn21, Pna21, or P21 structures may have lower formation energies than the wurtzite lattice at a given Be composition. The band-gap energies of Zn1-xBexO in the wurtzite and the orthorhombic structures are nearly identical and the bowing of the band-gap energy increases with increasing Be concentration. The spontaneous polarization of Zn1-xBexO in the orthorhombic lattice is markedly larger compared to the wurtzite structure while the piezoelectric polarization in the wurtzite and orthorhombic structures varies linearly with the Be concentration.
Directory of Open Access Journals (Sweden)
A Rahmatnezamabad
2014-11-01
Full Text Available In this paper photonic band gaps of 1D photonic crystal are compared by using transfer matrix method and Fresnel coefficients method. In Fresnel coefficients method, the refractive indices of each layer and incidence light angle to the surface are used for calculating Fresnel coefficients, and then the necessary and sufficient condition for a 100% reflection from the surface of double layer dielectrics is applied in such a way that reflection coefficient tends to unity so that photonic band gaps are determined. But in transfer matrix method there are some complications needed for solving quadratic partial differential equations and applying continuity of tangent components of fields and Bloch’s condition, though the results are the same
Xu, N. N.; Li, G. P.; Lin, Q. L.; Liu, H.; Bao, L. M.
2016-12-01
Single crystals wurtzite ZnO with (001) orientation were implanted with Co+ ions at room temperature (RT). To tune their magnetic behavior as well as the band gap of the implanted wafers, Ar+ ion post-irradiation (PI) was performed using the calculated energy and ion dose. The formed Co clusters present in the high dose Co-implanted ZnO wafer were observed to be absent after the PI, which is quite different from the low dose doped one. It is found that all the implanted samples showed a giant magnetic moment and a narrowing optical band gap, and that the post-irradiated ones exhibited an even further redshifted absorption edge and ferromagnetic behavior but with saturation magnetization (MS) drastically decreased.
Rellergert, Wade G; DeMille, D; Greco, R R; Hehlen, M P; Jackson, R A; Torgerson, J R; Hudson, Eric R
2010-01-01
We have recently described a novel method for the construction of a solid-state optical frequency reference based on doping $^{229}$Th into high energy band-gap crystals. Since nuclear transitions are far less sensitive to environmental conditions than atomic transitions, we have argued that the $^{229}$Th optical nuclear transition may be driven inside a host crystal resulting in an optical frequency reference with a short-term stability of $3\\times10^{-17}<\\Delta f/f <1\\times10^{-15}$ at 1 s and a systematic-limited repeatability of $\\Delta f/f \\sim 2 \\times 10^{-16}$. Improvement by $10^2-10^3$ of the constraints on the variability of several important fundamental constants also appears possible. Here we present the results of the first phase of these experiments. Specifically, we have evaluated several high energy band-gap crystals (Th:NaYF, Th:YLF, Th:LiCAF, Na$_2$ThF$_6$, LiSAF) for their suitability as a crystal host by a combination of electron beam microprobe measurements, Rutherford Backscatte...
Photonic band gap in thin wire metamaterials.
Hock, Kai Meng
2008-03-01
We investigate the band structure of a class of photonic crystals made from only thin wires. Using a different method, we demonstrate that a complete photonic band gap is possible for such materials. Band gap materials normally consist of space filling dielectric or metal, whereas thin wires occupy a very small fraction of the volume. We show that this is related to the large increase in scattering at the Brillouin zone boundary. The method we developed brings together the calculation techniques in three different fields. The first is the calculation of scattering from periodic, tilted antennas, which we improve upon. The second is the standard technique for frequency selective surface design. The third is obtained directly from low energy electron diffraction theory. Good agreements with experiments for left handed materials, negative materials, and frequency selective surfaces are demonstrated.
Wei, Zhendong; Li, Baoren; Du, Jingmin; Yang, Gang
2016-04-01
According to the theory of phononic crystals, a new isolator applied to ship hydraulic pipe-support with a one-dimensional periodic composite structure is designed, which is composed of metal and rubber. The vibration of the ship hydraulic pipeline can be suppressed by the band gaps (BGs) of the isolator. The band structure and frequency response function of the isolator is figured out by the transfer matrix method and the finite element method respectively. The frequency ranges and width of the BGs can be modulated to obtain the best structure of the isolator by changing the geometrical parameters. The experimental results provide an attenuation of over 20 dB in the frequency range of the BGs, and the results show good agreement with those of the numeric calculations. The research provides an effective way to control the vibration of ship hydraulic pipelines.
Energy Technology Data Exchange (ETDEWEB)
Zhu Dapeng; Liu Guolei; Xiao Shuqin; Yan Shishen; He Shumin; Cai Li; Li Qinghao; Hu Shujun; Chen Yanxue; Kang Shishou; Mei Liangmo [School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China); Cao Qiang [School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China); Department of Physics, Qufu Normal University, Qufu, Shandong 273165 (China)
2013-05-07
Epitaxial (Zn{sub 1-x}Mg{sub x}){sub 1-y}Mn{sub y}O thin films were grown on c-Al{sub 2}O{sub 3} substrates by radio frequency oxygen plasma assisted molecular beam epitaxy. Single crystal structure of the (Zn{sub 1-x}Mg{sub x}){sub 1-y}Mn{sub y}O films was revealed by reflection high energy electron diffraction and X-ray diffraction. The band gap of the films can be tuned dramatically with increasing the Mg concentration, while the onset energy of Mn-related mid-gap absorption band only shows a small blue shift. Photoconductivity measurements indicate the Mn-related mid-gap states in (Zn{sub 1-x}Mg{sub x}){sub 1-y}Mn{sub y}O films can create free carriers and contribute to charge transfer transitions. The conduction band offset {Delta}E{sub C} = 0.13 eV and valence band offset {Delta}E{sub V} = 0.1 eV were obtained for ZnO/Zn{sub 0.8}Mg{sub 0.2}O heterostructures, which increase to {Delta}E{sub C} = 0.21 eV and {Delta}E{sub V} = 0.14 eV for ZnO/Zn{sub 0.7}Mg{sub 0.3}O heterostructures.
Hopping magnetotransport of the band-gap tuning Cu2Zn(Sn x Ge1-x )Se4 crystals.
Lähderanta, E; Hajdeu-Chicarosh, E; Shakhov, M A; Guc, M; Bodnar, I V; Arushanov, E; Lisunov, K G
2016-11-16
Resistivity, ρ(T, x), of Cu2Zn(Sn x Ge1-x )Se4 (CZTGeSe) single crystals with x = 0-1, investigated at temperatures between T ~ 10-320 K, exhibits an activated character within the whole temperature range, attaining a minimum at x = 0.47. Magnetoresistance (MR) of CZTGeSe with x = 0.26, 0.47 and 0.64 is positive (pMR) in all measured fields of B up to 20 T at any T between ~40-320 K, whereas MR of samples with x = 0 and 1 contains a negative contribution (nMR). The dependence of ρ(T) at B = 0 gives evidence for a nearest-neighbor hopping (NNH) conductivity in high-temperature intervals within T ~ 200-320 K depending on x, followed by the Mott variable-range hopping (VRH) charge transfer with lowering temperature. The pMR law of lnρ(B) [Formula: see text] B (2) is observed in both hopping conductivity regimes above, provided that the nMR contribution is absent or saturated. Analysis of the ρ(T) and MR data has yielded the values of the NNH activation energy and the VRH characteristic temperature, as well as those of the acceptor band width, the acceptor concentration, the localization radii of holes and the density of the localized states (DOS) at the Fermi level. All the parameters above exhibit a systematic non-monotonous dependence on x. Their extremums, lying close to x = 0.64, correspond to the minimum of a lattice disorder along with the maximum of DOS and of the acceptor concentration, as well as a highest proximity to the metal-insulator transition.
Hopping magnetotransport of the band-gap tuning Cu2Zn(Sn x Ge1-x )Se4 crystals
Lähderanta, E.; Hajdeu-Chicarosh, E.; Shakhov, M. A.; Guc, M.; Bodnar, I. V.; Arushanov, E.; Lisunov, K. G.
2016-11-01
Resistivity, ρ(T, x), of Cu2Zn(Sn x Ge1-x )Se4 (CZTGeSe) single crystals with x = 0-1, investigated at temperatures between T ~ 10-320 K, exhibits an activated character within the whole temperature range, attaining a minimum at x = 0.47. Magnetoresistance (MR) of CZTGeSe with x = 0.26, 0.47 and 0.64 is positive (pMR) in all measured fields of B up to 20 T at any T between ~40-320 K, whereas MR of samples with x = 0 and 1 contains a negative contribution (nMR). The dependence of ρ(T) at B = 0 gives evidence for a nearest-neighbor hopping (NNH) conductivity in high-temperature intervals within T ~ 200-320 K depending on x, followed by the Mott variable-range hopping (VRH) charge transfer with lowering temperature. The pMR law of lnρ(B) \\propto B 2 is observed in both hopping conductivity regimes above, provided that the nMR contribution is absent or saturated. Analysis of the ρ(T) and MR data has yielded the values of the NNH activation energy and the VRH characteristic temperature, as well as those of the acceptor band width, the acceptor concentration, the localization radii of holes and the density of the localized states (DOS) at the Fermi level. All the parameters above exhibit a systematic non-monotonous dependence on x. Their extremums, lying close to x = 0.64, correspond to the minimum of a lattice disorder along with the maximum of DOS and of the acceptor concentration, as well as a highest proximity to the metal-insulator transition.
Sánchez-Cano, R.; Porras-Montenegro, N.
2016-04-01
We present numerical predictions for the photonic TE-like band gap ratio and the quality factors of symmetric localized defect as a function of the thickness slab and temperature by the use of plane wave expansion and the finite-difference time-domain methods. The photonic-crystal hole slab is composed of a 2D hexagonal array with identical air holes and a circular cross section, embedded in a non-dispersive III-V semiconductor quaternary alloy slab, which has a high value of dielectric function in the near-infrared region, and the symmetric defect is formed by increasing the radius of a single hole in the 2D hexagonal lattice. We show that the band gap ratio depends linearly on the temperature in the range 150-400 K. Our results show a strong temperature dependence of the quality factor Q, the maximum (Q = 7000) is reached at T = 350 hbox {K}, but if the temperature continues to increase, the efficiency drops sharply. Furthermore, we present numerical predictions for the electromagnetic field distribution at T = 350 hbox {K}.
Energy Technology Data Exchange (ETDEWEB)
Zhang, Hai-Feng, E-mail: hanlor@163.com, E-mail: lsb@nuaa.edu.cn [Key Laboratory of Radar Imaging and Microwave Photonics (Nanjing Univ. Aeronaut. Astronaut.), Ministry of Education, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Nanjing Artillery Academy, Nanjing 211132 (China); Liu, Shao-Bin, E-mail: hanlor@163.com, E-mail: lsb@nuaa.edu.cn; Jiang, Yu-Chi [Key Laboratory of Radar Imaging and Microwave Photonics (Nanjing Univ. Aeronaut. Astronaut.), Ministry of Education, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)
2014-09-15
In this paper, the tunable all-angle negative refraction and photonic band gaps (PBGs) in two types of two-dimensional (2D) plasma photonic crystals (PPCs) composed of homogeneous plasma and dielectric (GaAs) with square-like Archimedean lattices (ladybug and bathroom lattices) for TM wave are theoretically investigated based on a modified plane wave expansion method. The type-1 structure is dielectric rods immersed in the plasma background, and the complementary structure is named as type-2 PPCs. Theoretical simulations demonstrate that the both types of PPCs with square-like Archimedean lattices have some advantages in obtaining the higher cut-off frequency, the larger PBGs, more number of PBGs, and the relative bandwidths compared to the conventional square lattices as the filling factor or radius of inserted rods is same. The influences of plasma frequency and radius of inserted rod on the properties of PBGs for both types of PPCs also are discussed in detail. The calculated results show that PBGs can be manipulated by the parameters as mentioned above. The possibilities of all-angle negative refraction in such two types of PPCs at low bands also are discussed. Our calculations reveal that the all-angle negative phenomena can be observed in the first two TM bands, and the frequency range of all-angle negative refraction can be tuned by changing plasma frequency. Those properties can be used to design the optical switching and sensor.
Energy Technology Data Exchange (ETDEWEB)
Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755 (United States)
2014-11-17
We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.
Institute of Scientific and Technical Information of China (English)
高永芳; 时家明; 赵大鹏
2011-01-01
利用特征矩阵法,分别研究了不同偏振方式的波入射到光子晶体时,光子晶体的禁带随入射角度的变化.结果表明:不论是TM波入射还是TE波入射,随着入射角度的增大,光子晶体的带隙都向短波方向移动;TM波入射时,光子晶体的带隙随入射角度的增大而减小,而以TE波入射光子晶体时,随着入射角度的增大,光子晶体的带隙逐渐增大.%The relationship of photonic band gap characteristics of photonic crystals and the different incidence angle were researched by characteristic matrix method. The result shows that the photonic band gap of 1D photonic crystals moves towards shortwave when incidence angle increase, no matter the incidence wave is TM wave or TE wave; the photonic band gap of 1D photonic crystals of TM wave decreases when the incidence angle increase, the photonic band gap of 1 D photonic crystals of TE wave increases when the incidence angle increase. This work provides a valuable reference to the design and application of infrared camouflage using one dimensional photonic crystals.
Growth experiment of narrow band-gap semiconductor PbSnTe single crystals in space (M-1)
Yamada, Tomoaki
1993-01-01
An experiment on crystal growth of Pb(1-x)Sn(x)Te in microgravity is planned. This material is an alloy of the compound semiconductors PbTe and SnTe. It is a promising material for infrared diode lasers and detectors in the wavelength region between 6 and 30 micron. Since the electrical properties of Pb(1-x)Sn(x)Te depend greatly on the Pb/Sn ratio and crystalline defects as well as impurity concentration, homogeneous, defect-free, high-quality crystals are anticipated. Although many growth methods, such as the pulling method, the Bridgman method, the vapor growth method, etc., have been applied to the growth of Pb(1-x)Sn(x)Te, large, homogeneous, low-defect-density crystals have not yet been grown on Earth. The unsuccessful results were caused by buoyancy-driven convection in the fluids induced by the specific gravity difference between heated and cooled fluids on Earth. A crystal is grown by cooling the melt from one end of the ampoule. In crystal growth from the melt, about 30 percent of the SnTe in the melt is rejected at the solid-liquid interface during solidification. On Earth, the rejected SnTe is completely mixed with the remaining melt by convection in the melt. Therefore, SnTe concentration in the melt, and accordingly in the crystal, increases as the crystal grows. In the microgravity environment, buoyancy-driven convection is suppressed because the specific gravity difference is negligible. In that case, the rejected SnTe remains at the solid-liquid interface and its concentration increases only at the interface. If the growth rate is higher than the PbTe-SnTe interdiffusion rate, the amount of SnTe which diffuses from the interface into the melt increases as SnTe piles up at the interface, and finally it balances the amount of rejected SnTe during solidification, resulting in steady-state SnTe transportation at the interface. By using this principle, compositionally homogeneous crystals can be grown. Furthermore, low-defect-density crystals will be
光子晶体应用于在浓度检测上的模拟研究%Application of Photonic Crystal Band Gap in Concentration Measurement
Institute of Scientific and Technical Information of China (English)
阿布杜外力; 阿不都热苏力; 帕孜来提
2014-01-01
采用平面波展开法数值计算了对二维光子晶体在TE和TM偏振态下的带隙进行了计算，给出了光子晶体中的禁带存在的理论依据，选择二维三角晶格光子晶体（GaAs）作为基底，在空气孔内填充浓度(质量百分浓度)为一定的待测溶液硫酸铜材料，通过计算得到了温度为298K情况下介电常数在71.917-62.530变化时，待测浓度的对应关系，并由此得到液体填充的光子晶体在不同偏振模式下光子禁带结构.结果表明，以硫酸铜的水溶液作为空气圆孔中的介质材料，当溶液质量百分浓度不同时光子带隙（PBG）发生变化。这对溶液浓度检测应用方面有一定的指导作用。%Plane wave expansion method is applied to simulate the band gap of two-dimensional triangular lattice photonic crystal made of a triangular lattice of dielectric rods in GaAs .we fill the air hole with copper sulfate material of Analyte concentra-tion, and figure out the corresponding relationship of dielectric constant of the copper sulfate when the change in dielectric constant of the copper sulfate tempurature in 298K.And therefore, we get the photonic band structure of photonic crystals infiltrated with copper sulphate in different polarization mode. The results show that the photonic band gap (PBG) changes with the difference of the concentration of the fructose solution, which are used as the dielectric material in the air hole. That play a guiding role for hyperglyce-mia patients in clinical applications.
Amri, R.; Sahel, S.; Gamra, D.; Lejeune, M.; Clin, M.; Zellama, K.; Bouchriha, H.
2017-04-01
One dimensional photonic crystal based on a mixture of an organic compound HMDSO and nitrogen N2, is elaborated by radiofrequency Plasma Enhanced Chemical Vapor Deposition (RF-PECVD) at different radiofrequency powers. The variation of the radiofrequency power for a flow of N2/HMDSO ratio equal to 0.4, leads to obtain two kinds of layers A and B with refractive index nA = 2 and nB = 1.55 corresponding to RF power of 200 W and 20 W, respectively. The analysis of the infrared results shows that these layers have the same chemical composition element with different structure. These layers, which exhibit a good indexes difference (nA - nB) contrast, allowed then the elaboration of a one-photonic crystal from the same initial gas mixture, which is the aim of this work. After the optimization of the layers thickness, we have measured transmission and reflection spectra and we found that the photonic band gap (PBG) appears after 15 periods of alternating A and B deposited layers. The introduction of defect in the structure leads to obtain a localized mode in the center of the PBG corresponding to the telecommunication wave length 1.55 μm. Finally, we have successfully interpreted our experimental results by using a theoretical model based on transfer matrix method.
Low band gap polymers for organic photovoltaics
DEFF Research Database (Denmark)
Bundgaard, Eva; Krebs, Frederik C
2007-01-01
Low band gap polymer materials and their application in organic photovoltaics (OPV) are reviewed. We detail the synthetic approaches to low band gap polymer materials starting from the early methodologies employing quinoid homopolymer structures to the current state of the art that relies...
Li, Haofeng; Wang, Xiaoxin; Liu, Jifeng
2016-03-01
We demonstrate highly effective strain-induced band-engineering of (111) oriented direct-gap Ge1-xSnx thin films (0.074 GeSn films also demonstrate high thermal stability, offering both excellent direct-gap optoelectronic properties and fabrication/operation robustness for integrated photonics.
Directory of Open Access Journals (Sweden)
Hai-Feng Zhang
2016-08-01
Full Text Available In this paper, the properties of photonic band gaps (PBGs in two types of two-dimensional plasma-dielectric photonic crystals (2D PPCs under a transverse-magnetic (TM wave are theoretically investigated by a modified plane wave expansion (PWE method where Monte Carlo method is introduced. The proposed PWE method can be used to calculate the band structures of 2D PPCs which possess arbitrary-shaped filler and any lattice. The efficiency and convergence of the present method are discussed by a numerical example. The configuration of 2D PPCs is the square lattices with fractal Sierpinski gasket structure whose constituents are homogeneous and isotropic. The type-1 PPCs is filled with the dielectric cylinders in the plasma background, while its complementary structure is called type-2 PPCs, in which plasma cylinders behave as the fillers in the dielectric background. The calculated results reveal that the enough accuracy and good convergence can be obtained, if the number of random sampling points of Monte Carlo method is large enough. The band structures of two types of PPCs with different fractal orders of Sierpinski gasket structure also are theoretically computed for a comparison. It is demonstrate that the PBGs in higher frequency region are more easily produced in the type-1 PPCs rather than in the type-2 PPCs. Sierpinski gasket structure introduced in the 2D PPCs leads to a larger cutoff frequency, enhances and induces more PBGs in high frequency region. The effects of configurational parameters of two types of PPCs on the PBGs are also investigated in detail. The results show that the PBGs of the PPCs can be easily manipulated by tuning those parameters. The present type-1 PPCs are more suitable to design the tunable compacted devices.
Zhang, Hai-Feng; Liu, Shao-Bin
2016-08-01
In this paper, the properties of photonic band gaps (PBGs) in two types of two-dimensional plasma-dielectric photonic crystals (2D PPCs) under a transverse-magnetic (TM) wave are theoretically investigated by a modified plane wave expansion (PWE) method where Monte Carlo method is introduced. The proposed PWE method can be used to calculate the band structures of 2D PPCs which possess arbitrary-shaped filler and any lattice. The efficiency and convergence of the present method are discussed by a numerical example. The configuration of 2D PPCs is the square lattices with fractal Sierpinski gasket structure whose constituents are homogeneous and isotropic. The type-1 PPCs is filled with the dielectric cylinders in the plasma background, while its complementary structure is called type-2 PPCs, in which plasma cylinders behave as the fillers in the dielectric background. The calculated results reveal that the enough accuracy and good convergence can be obtained, if the number of random sampling points of Monte Carlo method is large enough. The band structures of two types of PPCs with different fractal orders of Sierpinski gasket structure also are theoretically computed for a comparison. It is demonstrate that the PBGs in higher frequency region are more easily produced in the type-1 PPCs rather than in the type-2 PPCs. Sierpinski gasket structure introduced in the 2D PPCs leads to a larger cutoff frequency, enhances and induces more PBGs in high frequency region. The effects of configurational parameters of two types of PPCs on the PBGs are also investigated in detail. The results show that the PBGs of the PPCs can be easily manipulated by tuning those parameters. The present type-1 PPCs are more suitable to design the tunable compacted devices.
Zhang, Hai-Feng; Liu, Shao-Bin; Jiang, Yu-Chi
2015-04-01
In this paper, the properties of photonic band gap (PBG) and surface plasmon modes in the three-dimensional (3D) magnetized plasma photonic crystals (MPPCs) with face-centered-cubic (fcc) lattices are theoretically investigated based on the plane wave expansion (PWE) method, in which the homogeneous magnetized plasma spheres are immersed in the homogeneous dielectric background, as the Voigt effects of magnetized plasma are considered (the incidence electromagnetic wave vector is perpendicular to the external magnetic field at any time). The dispersive properties of all of the EM modes are studied because the PBG is not only for the extraordinary and ordinary modes but also for the mixed polarized modes. The equations for PBGs also are theoretically deduced. The numerical results show that the PBG and a flatbands region can be observed. The effects of the dielectric constant of dielectric background, filling factor, plasma frequency and plasma cyclotron frequency (the external magnetic field) on the dispersive properties of all of the EM modes in such 3D MPPCs are investigated in detail, respectively. Theoretical simulations show that the PBG can be manipulated by the parameters as mentioned above. Compared to the conventional dielectric-air PCs with similar structure, the larger PBG can be obtained in such 3D MPPCs. It is also shown that the upper edge of flatbands region cannot be tuned by the filling factor and dielectric constant of dielectric background, but it can be manipulated by the plasma frequency and plasma cyclotron frequency.
Hu, Zhenhua; Xiang, Bowen; Xing, Yunsheng
2016-12-01
Transmission optical properties of one-dimensional (1-D) InAs/GaAs quantum-dot photonic crystal (QD-PC), composed of 400 elementary cells, were analyzed by using transfer matrix method. In our calculations, a homogeneous broadening with temperature and other inhomogeneous broadening with quantum dot (QD) size fluctuations are introduced. Our results show that a large optical Stark shift occurs at the high energy edge of the transmission photonic band-gap (TPBG) when, which exhibits the function of light with light, an external laser field acts resonantly on the excitons in the InAs QDs. Utilized this TPBG based on the pump-probe geometry, an all-optical switch can be constructed and the on-off switching extinction ratio (SER) is varied with both the temperature and the inhomogeneity of QDs. Significantly, it still maintains switching behavior and can process the data sequence of return-to-zero codes of 250 Gb/s even if the QD standard deviation of relative size fluctuations (SD-RSF) is up to 3% and the temperature is at 100 K.
Energy Technology Data Exchange (ETDEWEB)
Zhang, Hai-Feng, E-mail: hanlor@163.com [Key Laboratory of Radar Imaging and Microwave Photonics (Nanjing University of Aeronautics and Astronautics), Ministry of Education, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Nanjing Artillery Academy, Nanjing 211132 (China); Ding, Guo-Wen; Li, Hai-Ming; Liu, Shao-Bin [Key Laboratory of Radar Imaging and Microwave Photonics (Nanjing University of Aeronautics and Astronautics), Ministry of Education, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)
2015-02-15
In this paper, the properties of complete photonic band gaps (CPBGs) and tunable self-collimation in two-dimensional plasma photonic crystals (2D PPCs) with a new structure in square lattices, whose dielectric fillers (GaAs) are inserted into homogeneous and nomagnetized plasma background are theoretically investigated by a modified plane wave expansion (PWE) method with a novel technique. The novel PWE method can be utilized to compute the dispersion curves of 2D PPCs with arbitrary-shaped cross section in any lattices. As a comparison, CPBGs of PPCs for four different configurations are numerically calculated. The computed results show that the proposed design has the advantages of achieving the larger CPBGs compared to the other three configurations. The influences of geometric parameters of filled unit cell and plasma frequency on the properties of CPBGs are studied in detail. The calculated results demonstrate that CPBGs of the proposed 2D PPCs can be easily engineered by changing those parameters, and the larger CPBGs also can be obtained by optimization. The self-collimation in such 2D PPCs also is discussed in theory under TM wave. The theoretical simulations reveal that the self-collimation phenomena can be found in the TM bands, and both the frequency range of self-collimation and the equifrequency surface contours can be tuned by the parameters as mentioned above. It means that the frequency range and direction of electromagnetic wave can be manipulated by designing, as it propagates in the proposed PPCs without diffraction. Those results can hold promise for designing the tunable applications based on the proposed PPCs.
Multi Band Gap High Efficiency Converter (RAINBOW)
Bekey, I.; Lewis, C.; Phillips, W.; Shields, V.; Stella, P.
1997-01-01
The RAINBOW multi band gap system represents a unique combination of solar cells, concentrators and beam splitters. RAINBOW is a flexible system which can readily expand as new high efficiency components are developed.
Modification in band gap of zirconium complexes
Sharma, Mayank; Singh, J.; Chouhan, S.; Mishra, A.; Shrivastava, B. D.
2016-05-01
The optical properties of zirconium complexes with amino acid based Schiff bases are reported here. The zirconium complexes show interesting stereo chemical features, which are applicable in organometallic and organic synthesis as well as in catalysis. The band gaps of both Schiff bases and zirconium complexes were obtained by UV-Visible spectroscopy. It was found that the band gap of zirconium complexes has been modified after adding zirconium compound to the Schiff bases.
Vargas, W. E.; Hernández-Jiménez, M.; Libby, E.; Azofeifa, D. E.; Solis, Á.; Barboza-Aguilar, C.
2015-09-01
Under normal illumination with non-polarized light, reflection spectra of the cuticle of golden-like and red Chrysina aurigans scarabs show a structured broad band of left-handed circularly polarized light. The polarization of the reflected light is attributed to a Bouligand-type left-handed chiral structure found through the scarab's cuticle. By considering these twisted structures as one-dimensional photonic crystals, a novel approach is developed from the dispersion relation of circularly polarized electromagnetic waves traveling through chiral media, to show how the broad band characterizing these spectra arises from an intrinsic narrow photonic band gap whose spectral position moves through visible and near-infrared wavelengths.
Diluted II-VI oxide semiconductors with multiple band gaps.
Yu, K M; Walukiewicz, W; Wu, J; Shan, W; Beeman, J W; Scarpulla, M A; Dubon, O D; Becla, P
2003-12-12
We report the realization of a new mult-band-gap semiconductor. Zn(1-y)Mn(y)OxTe1-x alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn(1-y)Mn(y)Te host. When only 1.3% of Te atoms are replaced with oxygen in a Zn0.88Mn0.12Te crystal the resulting band structure consists of two direct band gaps with interband transitions at approximately 1.77 and 2.7 eV. This remarkable modification of the band structure is well described by the band anticrossing model. With multiple band gaps that fall within the solar energy spectrum, Zn(1-y)Mn(y)OxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.
Sizable band gap in organometallic topological insulator
Derakhshan, V.; Ketabi, S. A.
2017-01-01
Based on first principle calculation when Ceperley-Alder and Perdew-Burke-Ernzerh type exchange-correlation energy functional were adopted to LSDA and GGA calculation, electronic properties of organometallic honeycomb lattice as a two-dimensional topological insulator was calculated. In the presence of spin-orbit interaction bulk band gap of organometallic lattice with heavy metals such as Au, Hg, Pt and Tl atoms were investigated. Our results show that the organometallic topological insulator which is made of Mercury atom shows the wide bulk band gap of about ∼120 meV. Moreover, by fitting the conduction and valence bands to the band-structure which are produced by Density Functional Theory, spin-orbit interaction parameters were extracted. Based on calculated parameters, gapless edge states within bulk insulating gap are indeed found for finite width strip of two-dimensional organometallic topological insulators.
Quantum electrodynamics near a photonic band-gap
Liu, Yanbing; Houck, Andrew
Quantum electrodynamics predicts the localization of light around an atom in photonic band-gap (PBG) medium or photonic crystal. Here we report the first experimental realization of the strong coupling between a single artificial atom and an one dimensional PBG medium using superconducting circuits. In the photonic transport measurement, we observe an anomalous Lamb shift and a large band-edge avoided crossing when the artificial atom frequency is tuned across the band-edge. The persistent peak within the band-gap indicates the single photon bound state. Furthermore, we study the resonance fluorescence of this bound state, again demonstrating the breakdown of the Born-Markov approximation near the band-edge. This novel architecture can be directly generalized to study many-body quantum electrodynamics and to construct more complicated spin chain models.
Energy bands and gaps near an impurity
Mihóková, E.; Schulman, L. S.
2016-10-01
It has been suggested that in the neighborhood of a certain kind of defect in a crystal there is a bend in the electronic band. We confirm that this is indeed possible using the Kronig-Penney model. Our calculations also have implications for photonic crystals.
Institute of Scientific and Technical Information of China (English)
颜琳; 赵鹤平; 王小云; 蔡灿英; 李德俊; 邬云文
2006-01-01
Phononic crystal is a novel functional material with acoustic band-gaps. We study the band structure of 2D phononic crystal using the plane wave expansion method. The crystal is composed of a square array of scatterers embedded in an epoxy host, and the scatterers have square cross sections. The results show that the band-gaps of this system can be adjusted by changing the scatterers' tropism. When the filling rate is low, with the increase of the scatterers'rotation angle, the band-gap width initially becomes narrower and then widens gradually, while at high filling rates, the band-gap width increases slightly at first and then decreases as the scatterers' rotation angle increases.%声子晶体是一种具有声波带隙特性的新型功能材料.运用平面波展开法研究了二维声子晶体的带结构,二维声子晶体由横截面为正方形的散射体按正方形排列植入环氧树脂基体中形成.结果表明:通过改变散射体的取向可以调节系统的带隙,当填充率较低时,带隙宽度随散射体旋转角的增加先减小再增加,而填充率较高时,带隙宽度随散射体旋转角的增加而先稍有增加然后再减小.
Tolhurst, Thomas M; Leedahl, Brett; Andrews, Justin L; Marley, Peter M; Banerjee, Sarbajit; Moewes, Alexander
2016-06-21
New V2O5 polymorphs have risen to prominence as a result of their open framework structures, cation intercalation properties, tunable electronic structures, and wide range of applications. The application of these materials and the design of new, useful polymorphs requires understanding their defining structure-property relationships. We present a characterization of the band gap and electronic structure of nanowires of the novel ζ-phase and the orthorhombic α-phase of V2O5 using X-ray spectroscopy and density functional theory calculations. The band gap is found to decrease from 1.90 ± 0.20 eV in the α-phase to 1.50 ± 0.20 eV in the ζ-phase, accompanied by the loss of the α-phase's characteristic split-off dxy band in the ζ-phase. States of dxy origin continue to dominate the conduction band edge in the new polymorph but the inequivalence of the vanadium atoms and the increased local symmetry of [VO6] octahedra results in these states overlapping with the rest of the V 3d conduction band. ζ-V2O5 exhibits anisotropic conductivity along the b direction, defining a 1D tunnel, in contrast to α-V2O5 where the anisotropic conductivity is along the ab layers. We explain the structural origins of the differences in electronic properties that exist between the α- and ζ-phase.
Maximizing band gaps in plate structures
DEFF Research Database (Denmark)
Halkjær, Søren; Sigmund, Ole; Jensen, Jakob Søndergaard
2006-01-01
Band gaps, i.e., frequency ranges in which waves cannot propagate, can be found in elastic structures for which there is a certain periodic modulation of the material properties or structure. In this paper, we maximize the band gap size for bending waves in a Mindlin plate. We analyze an infinite...... periodic plate using Bloch theory, which conveniently reduces the maximization problem to that of a single base cell. Secondly, we construct a finite periodic plate using a number of the optimized base cells in a postprocessed version. The dynamic properties of the finite plate are investigated...
Derzsi, Mariana; Stasiewicz, Juliusz; Grochala, Wojciech
2011-09-01
We demonstrate that DFT calculations performed with the local density approximation (LDA) allow for significantly better reproduction of lattice constants, the unit cell volume and the density of Ag(II)SO(4) than those done with generalized gradient approximation (GGA). The LDA+U scheme, which accounts for electronic correlation effects, enables the accurate prediction of the magnetic superexchange constant of this strongly correlated material and its band gap at the Fermi level. The character of the band gap places the compound on the borderline between a Mott insulator and a charge transfer insulator. The size of the band gap (0.82 eV) indicates that AgSO(4) is a ferrimagnetic semiconductor, and possibly an attractive material for spintronics. A bulk modulus of 27.0 GPa and a compressibility of 0.037 GPa(-1) were determined for AgSO(4) from the third-order Birch-Murnaghan isothermal equation of state up to 20 GPa. Several polymorphic types compete with the ambient pressure P-1 phase as the external pressure is increased. The P-1 phase is predicted to resist pressure-induced metallization up to at least 20 GPa.
Institute of Scientific and Technical Information of China (English)
LIN Yan-Ting; REN Bo; ZHAO Xiang-Yong; WANG Fei-Fei; WANG Yao-Jin; XU Hai-Qing; LIN Di; LUO Hao-Su
2009-01-01
Refractive indices and extinction coefficients of 0.92Pb(Mg1/3 Nb2/a )O3-0.08Pb Ti03 (PMN-0.08PT) single crystal are investigated by variable angle spectroscopic ellipsometry (VASE) at different wavelengths. The parameters relative to the energy band structure are obtained by fitting to the single-oscillator dispersion equation, and the band gap energy is also deduced from the Tauc equation. Similar to most oxygen-octahedra ferroelectrics,PMN-0.08PT has the same dispersion behavior described by the refractive-index dispersion parameters.
Institute of Scientific and Technical Information of China (English)
章海锋; 蓝鹏飞; 杨国华; 肖正泉
2011-01-01
In order to study property of prohibit band gaps in 1-D ternary unmagnetized plasma photonic crystals, the transfer matrix method was applied to simulate the electromagnetic wave propagation through 1-D ternary umnagnetizod plasma photonic crystals. Based on the calculated transmission coefficients, effect of periodic constant, dielectric constant, thickness of dielectric layer and parameter of plasma on the property of prohibited band gaps was analyzed. The results illustrate that the band gaps can be tuned by changing dielectric constant, thickness of dielectric layer and plasma frequency, the bandwidth of prohibited band gaps can not be broadened by increasing periodic and plasma collision frequency. The results are good theoretical references to design I-D ternary unmagnetizod plasma photonic crystal devices.%为了研究1维3元非磁化等离子体光子晶体的禁带特性,采用传输矩阵法仿真计算了电磁波在1维3元非磁化等离子体光子晶体的传播规律,用计算得到的电磁波透射系数讨论了周期常数、介电常数、介质层厚度和等离子体参量对其禁带特性的影响.结果表明,改变介电常数、介质层厚度和等离子体频率可以实现对带隙的调制,增加周期数和等离子体频率不能实现对禁带的拓展.这一结果为设计1维3元非磁化等离子体光子晶体器件提供了理论参考.
Band Gap Narrowing in Heavily Doped Silicon.
Gupta, Tapan Kumar
Two analytic models for transport and band gap narrowing in heavily doped (N_{rm D} > 10^{20} cm^ {-3}) silicon have been set up and verified through measurements on n^{+} -p junction devices. The first model is based on calculation of the ratio of the charge present in the emitter of the n^{+} region of the junction to that of the charge present in the absence of band gap shrinkage. Fermi-Dirac statistics are employed and are found to have a significant effect at this doping level. The second model is based on current transport of minority carriers in the n^{+} region. In this model only two parameters need to be known, the diffusion coefficient and the diffusion length for minority carriers, to calculate the band gap narrowing. An empirical relation between band gap narrowing and donor concentration has also been established based on experimental values of diffusion coefficient and mobility. These models have been verified by several different experimental techniques including surface photovoltage, open circuit voltage decay, photoconductivity decay and modulation reflection spectroscopy. The results indicate that, in the impurity range above about 10^{20} cm^{-3}, Fermi-Dirac statistics must be invoked in order to achieve a satisfactory fit with experimental data.
Plasmonic band gap cavities on biharmonic gratings
Kocabas, Askin; Seckin Senlik, S.; Aydinli, Atilla
2008-05-01
In this paper, we have experimentally demonstrated the formation of plasmonic band gap cavities in infrared and visible wavelength range. The cavity structure is based on a biharmonic metallic grating with selective high dielectric loading. A uniform metallic grating structure enables strong surface plasmon polariton (SPP) excitation and a superimposed second harmonic component forms a band gap for the propagating SPPs. We show that a high dielectric superstructure can dramatically perturb the optical properties of SPPs and enables the control of the plasmonic band gap structure. Selective patterning of the high index superstructure results in an index contrast in and outside the patterned region that forms a cavity. This allows us to excite the SPPs that localize inside the cavity at specific wavelengths, satisfying the cavity resonance condition. Experimentally, we observe the formation of a localized state in the band gap and measure the dispersion diagram. Quality factors as high as 37 have been observed in the infrared wavelength. The simplicity of the fabrication and the method of testing make this approach attractive for applications requiring localization of propagating SPPs.
Institute of Scientific and Technical Information of China (English)
郭立帅
2012-01-01
The properties of band - gap of one - dimensional doped photonic crystal are studied by using numerical- ly method based on the transfer matrix method. The result shows that a narrow conduction band appears in the cen- tre of forbidden band in one - dimensional doped photonic crystal. The depth of conduction band appears in the centre of forbidden band has a maximum, which was caused by the number of layers of the second half of impurity where the first one was fixed. It shows that the forbidden band center＇s conduction band depth was still biggest by means of changing basic level thickness.%基于传输矩阵法,数值研究了掺杂一维光子晶体带隙特征。研究表明：一维掺杂光晶体禁带中心位置出现一个极窄的导带,当杂质前半部分层数给定时,后半部分总存在一个层数,使得禁带中心导带的深度达到最大,在此基础上通过改变基本层厚度发现,禁带中心的导带深度仍然最大,我们可以通过改变基本层厚度厚度,让特定波长的光顺利通过。
Electroluminescence from indirect band gap semiconductor ReS2
Gutiérrez-Lezama, Ignacio; Aditya Reddy, Bojja; Ubrig, Nicolas; Morpurgo, Alberto F.
2016-12-01
It has been recently claimed that bulk crystals of transition metal dichalcogenide (TMD) ReS2 are direct band gap semiconductors, which would make this material an ideal candidate, among all TMDs, for the realization of efficient opto-electronic devices. The situation is however unclear, because even more recently an indirect transition in the PL spectra of this material has been detected, whose energy is smaller than the supposed direct gap. To address this issue we exploit the properties of ionic liquid gated field-effect transistors (FETs) to investigate the gap structure of bulk ReS2. Using these devices, whose high quality is demonstrated by a record high electron FET mobility of 1100 cm2 V-1 s-1 at 4 K, we can induce hole transport at the surface of the material and determine quantitatively the smallest band gap present in the material, irrespective of its direct or indirect nature. The value of the band gap is found to be 1.41 eV, smaller than the 1.5 eV direct optical transition but in good agreement with the energy of the indirect optical transition, providing an independent confirmation that bulk ReS2 is an indirect band gap semiconductor. Nevertheless, contrary to the case of more commonly studied semiconducting TMDs (e.g., MoS2, WS2, etc) in their bulk form, we also find that ReS2 FETs fabricated on bulk crystals do exhibit electroluminescence when driven in the ambipolar injection regime, likely because the difference between direct and indirect gap is only 100 meV. We conclude that ReS2 does deserve more in-depth investigations in relation to possible opto-electronic applications.
Institute of Scientific and Technical Information of China (English)
李晓莉; 李岩; 陈国祥
2013-01-01
利用时域有限差分法和传输矩阵法研究了Fibonacci序列一维准周期光子晶体的能带.结果表明:此种结构的光子晶体在高频范围存在带隙；进一步发现当构成薄膜系的两种材料厚度相等,且膜系的非周期性较强即膜系的级数较高时,光子晶体较容易出现高频带隙.%The photonic bands of one-dimension quasi-period photonic crystal with Fibonacci sequence are studied by the finite-difference time-domain method and the transmit matrix method. Our results show that there are photonic band gaps in high frequency for this kind of photonic crystal. Moreover when the thickness of the two materials which constitute the films are equal and the films have strong non-periodicity, the photonic crystal with Fibonacci sequence will gain high frequency photonic band gaps.
Slow light and band gaps in metallodielectric cylinder arrays.
Shainline, Jeffrey M; Xu, Jimmy
2009-05-25
We consider two-dimensional three-component photonic crystals wherein one component is modeled as a drude-dispersive metal. It is found that the dispersion relation of light in this environment depends critically on the configuration of the metallic and dielectric components. In particular, for the case of an incident electromagnetic wave with electric field vector parallel to the axis of the cylinders it is shown that the presence of dielectric shells covering the metallic cylinders leads to a closing of the structural band gap with increased filling factor, as would be expected for a purely dielectric photonic crystal. For the same polarization, the photonic band structure of an array of metallic shell cylinders with dielectric cores do not show the closing of the structural band gap with increased filling factor of the metallic component. In this geometry, the photonic band structure contains bands with very small values of group velocity with some bands having a maximum of group velocity as small as .05c.
Institute of Scientific and Technical Information of China (English)
李未; 陈小玲
2011-01-01
利用二维三角晶格介质柱光子晶体TE偏振的禁带与介质柱半径的变化关系,分析了二维光子晶体的带隙分布及斜边耦合特性.结果表明,光子禁带的大小受到构成光子晶体的介电材料的空间排列分布以及介质柱半径大小的影响;束缚在光子晶体中的光波可以在波导和谐振腔中进行传输,达到选择输出光波的目的.%The paper study the relation between two dimensional triangular lattice photonic crystal band gap for TE polarizationand dielectric cylinder radius, and study distribution of two dimensional photonic crystal defect state. Results show, the photonic crystal band gaps were distributed by dielectric material space distribution and medium size of the radius; Tied in the photon crystals of light waves can transmission in waveguides and resonator cavity to select the output of light waves.
Institute of Scientific and Technical Information of China (English)
汪杰; 朱娜; 成超; 颜晓
2011-01-01
研究了正方形和圆形介质柱混合排列的二维光子晶体的能带特性.运用平面波展开法在正方形和正三角形晶格下将混合柱形与统一柱形光子晶体的禁带特性进行计算比较.仿真结果表明:对于正方形晶格,混合柱形使光子晶体的TM模高阶能带向低频方向移动,禁带的宽度和位置介于正方形柱体和圆形柱体之间.在正三角形晶格中,混合柱形光子晶体出现了明显的TE模禁带,而在全正方形和全圆形柱体中几乎不存在TE模禁带.同时能带频率向低频方向移动的现象也存在于正三角形品格混合柱形光子晶体中.%The band gap properties of photonic crystals with square and circular dielectric rods mixed arrangement are analyzed. The band gap properties of mixed shapes rods photonic crystal are compared with square rods and round rods ones compared by using plane wave expansion method. Simulation results show that for the square lattice, mixed shapes of rods make the higher-order bands of TM modes moving towards the low frequency range, whose width and location are between the square and round rods photonic crystal. In triangle lattice, a significant band gap is presented in photonic crystal with mixed shapes of rods in TE mode, while it is almost not presented in square and round rods crystals. The phenomenon of bands moving towards the low frequency range is also found in the triangle lattice mixed shapes rods photonic crystal.
Hollow-Core Photonic Band Gap Fibers for Particle Acceleration
Energy Technology Data Exchange (ETDEWEB)
Noble, Robert J.; Spencer, James E.; /SLAC; Kuhlmey, Boris T.; /Sydney U.
2011-08-19
Photonic band gap (PBG) dielectric fibers with hollow cores are being studied both theoretically and experimentally for use as laser driven accelerator structures. The hollow core functions as both a longitudinal waveguide for the transverse-magnetic (TM) accelerating fields and a channel for the charged particles. The dielectric surrounding the core is permeated by a periodic array of smaller holes to confine the mode, forming a photonic crystal fiber in which modes exist in frequency pass-bands, separated by band gaps. The hollow core acts as a defect which breaks the crystal symmetry, and so-called defect, or trapped modes having frequencies in the band gap will only propagate near the defect. We describe the design of 2-D hollow-core PBG fibers to support TM defect modes with high longitudinal fields and high characteristic impedance. Using as-built dimensions of industrially-made fibers, we perform a simulation analysis of the first prototype PBG fibers specifically designed to support speed-of-light TM modes.
Manzanares-Martinez, J; Archuleta-Garcia, R; Moctezuma-Enriquez, D
2010-01-01
In this work we show theoretically that it is possible to design a large band gap in the infrared range using a one-dimensional Photonic Crystal heterostructure made of porous silicon. Stacking together multiple photonic crystal substructures of the same contrast index, but of different lattice periods, it is possible to broad the narrow forbidden band gap that can be reached by the low contrast index of the porous silicon multilayers. The main idea in this work is that we can construct a Giant Photonic Band Gap -as large as desired- by combining a tandem of photonic crystals substructures by using a simple analytical rule to determine the period of each substructure.
Diluted magnetic semiconductors with narrow band gaps
Gu, Bo; Maekawa, Sadamichi
2016-10-01
We propose a method to realize diluted magnetic semiconductors (DMSs) with p - and n -type carriers by choosing host semiconductors with a narrow band gap. By employing a combination of the density function theory and quantum Monte Carlo simulation, we demonstrate such semiconductors using Mn-doped BaZn2As2 , which has a band gap of 0.2 eV. In addition, we found a nontoxic DMS Mn-doped BaZn2Sb2 , of which the Curie temperature Tc is predicted to be higher than that of Mn-doped BaZn2As2 , the Tc of which was up to 230 K in a recent experiment.
Photonic band gap enhancement in frequency-dependent dielectrics.
Toader, Ovidiu; John, Sajeev
2004-10-01
We illustrate a general technique for evaluating photonic band structures in periodic d -dimensional microstructures in which the dielectric constant epsilon (omega) exhibits rapid variations with frequency omega . This technique involves the evaluation of generalized electromagnetic dispersion surfaces omega ( k--> ,epsilon) in a (d+1) -dimensional space consisting of the physical d -dimensional space of wave vectors k--> and an additional dimension defined by the continuous, independent, variable epsilon . The physical band structure for the photonic crystal is obtained by evaluating the intersection of the generalized dispersion surfaces with the "cutting surface" defined by the function epsilon (omega) . We apply this method to evaluate the band structure of both two- and three-dimensional (3D) periodic microstructures. We consider metallic photonic crystals with free carriers described by a simple Drude conductivity and verify the occurrence of electromagnetic pass bands below the plasma frequency of the bulk metal. We also evaluate the shift of the photonic band structure caused by free carrier injection into semiconductor-based photonic crystals. We apply our method to two models in which epsilon (omega) describes a resonant radiation-matter interaction. In the first model, we consider the addition of independent, resonant oscillators to a photonic crystal with an otherwise frequency-independent dielectric constant. We demonstrate that for an inhomogeneously broadened distribution of resonators impregnated within an inverse opal structure, the full 3D photonic band gap (PBG) can be considerably enhanced. In the second model, we consider a coupled resonant oscillator mode in a photonic crystal. When this mode is an optical phonon, there can be a synergetic interplay between the polaritonic resonance and the geometrical scattering resonances of the structured dielectric, leading to PBG enhancement. A similar effect may arise when resonant atoms that are
Large acoustic band gaps created by rotating square rods in two-dimensional periodic composites
Li Xiao Ling; Hu He Fei; Zhong Shao; Liu You Yan
2003-01-01
Effects of orientations of square rods on the acoustic band gaps in two-dimensional periodic arrays of rigid solid rods embedded in air are studied. The acoustic band gaps will be opened and enlarged greatly by increasing the rotation angle. For any filling fraction F, the maximum acoustic band gaps appear at the same rotation angle theta = 45 deg. for the cases of F<=0.50, otherwise they will appear at different limit values theta sub c and the largest band gap is achieved at a filling fraction of about F=0.85. This gap-tuning effect will be stronger with increase in filling fraction. This tuning mechanism of band gap suggests a new way to design band gaps of two-dimensional phononic crystals. (rapid communication)
Theoretical study of relative width of photonic band gap for the 3-D dielectric structure
Indian Academy of Sciences (India)
G K Johri; Akhilesh Tiwari; Saumya Saxena; Rajesh Sharma; Kuldeep Srivastava; Manoj Johri
2002-03-01
Calculations for the relative width (/0) as a function of refractive index and relative radius of the photonic band gap for the fcc closed packed 3-D dielectric microstructure are reported and comparison of experimental observations and theoretical predictions are given. This work is useful for the understanding of photonic crystals and occurrence of the photonic band gap.
Souilah, M.; Lafond, A.; Barreau, N.; Guillot-Deudon, C.; Kessler, J.
2008-06-01
The crystal structure of high Ga-content CuIn1-xGaxSe2 (CIGSe) compounds has been further investigated with the help of single crystal x-ray diffraction technique. It is known that CIGSe compounds adopt the chalcopyrite crystal structure. In the case of Cu-poor, Ga-rich CIGSe, the present study shows that an alternative structure should be considered. This structure is derived from that of stannite in which there is a Ga /In segregation on two different atomic planes. The diffuse reflectance measurements of the Cu-poor compound reveal a slightly different band gap and a smoother transition compared with those of the stoichiometric compound.
Institute of Scientific and Technical Information of China (English)
葛丽婷; 杨海; 谢永刚; 黄鉴; 陈建兵; 戴祖诚
2014-01-01
Based on the plane wave expansion method (PWE),sonic wave band gaps in the two-dimensional three-component phononic crystals composed of square array of tetrachloromethane square columns(cylinders)coa-ted by water layers embedded in a mercury host are investigated.The calculation results show that the cylinders more easily get higher frequency band gaps than square rods do at the same filling fraction.The calculations also ex-hibit that whether the shape of the scatters is square columns or cylinders,the relative bandwidth of the first gap is stable,but the relative width of the second gap is greatly influenced by the shape of the scatters.The relative band-width of the first gap with square becomes narrower than that with circular.It is suggested that the frequencies of the band gaps can be controlled by the shape of the scattering obj ects.This could be of importance in designing pho-nonic crystals of liquid systems and finding their optimum operation conditions.%基于平面波展开法，研究了水-四氯化碳/水银和四氯化碳-水/水银两种体系的二维三组元结构的声波带隙，结果表明，在相同填充率下，圆柱形插入体比正方柱形插入体更易得到较高频率范围内的完全带隙；无论插入体的形状为方柱或圆柱，第一带隙相对宽度的变化都是稳定的，但对第二带隙相对宽度的影响较大；圆柱形插入体的第一完全带隙的相对宽度变窄的速率比正方形插入体的快。该文提出通过散射体横切面积的几何形状来控制带隙频率。这对设计液体系统的声子晶体有实际意义。
Engineering the hypersonic phononic band gap of hybrid Bragg stacks.
Schneider, Dirk; Liaqat, Faroha; El Boudouti, El Houssaine; El Hassouani, Youssef; Djafari-Rouhani, Bahram; Tremel, Wolfgang; Butt, Hans-Jürgen; Fytas, George
2012-06-13
We report on the full control of phononic band diagrams for periodic stacks of alternating layers of poly(methyl methacrylate) and porous silica combining Brillouin light scattering spectroscopy and theoretical calculations. These structures exhibit large and robust on-axis band gaps determined by the longitudinal sound velocities, densities, and spacing ratio. A facile tuning of the gap width is realized at oblique incidence utilizing the vector nature of the elastic wave propagation. Off-axis propagation involves sagittal waves in the individual layers, allowing access to shear moduli at nanoscale. The full theoretical description discerns the most important features of the hypersonic one-dimensional crystals forward to a detailed understanding, a precondition to engineer dispersion relations in such structures.
The band-gap enhanced photovoltaic structure
Tessler, Nir
2016-05-01
We critically examine the recently suggested structure that was postulated to potentially add 50% to the photo-conversion efficiency of organic solar cells. We find that the structure could be realized using stepwise increase in the gap as long as the steps are not above 0.1 eV. We also show that the charge extraction is not compromised due to an interplay between the contact's space charge and the energy level modification, which result in a flat energy band at the extracting contact.
Analysis of two-dimensional photonic band gap structure with a rhombus lattice
Institute of Scientific and Technical Information of China (English)
Limei Qi; Ziqiang Yang; Xi Gao; Zheng Liang
2008-01-01
@@ The relative band gap for a rhombus lattice photonic crystal is studied by plane wave expansion method and high frequency structure simulator (HFSS) simulation. General wave vectors in the first Briliouin zone are derived. The relative band gap as a function of air-filling factor and background material is investigated, respectively, and the nature of photonic band gap for different lattice angles is analyzed by the distribution of electric energy. These results would provide theoretical instruction for designing optical integrated devices using photonic crystal with a rhombus lattice.
Electronic materials with a wide band gap: recent developments
Directory of Open Access Journals (Sweden)
Detlef Klimm
2014-09-01
Full Text Available The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap Eg = 0.66 eV after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (Eg = 1.12 eV. This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider Eg were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity.
Institute of Scientific and Technical Information of China (English)
Zhanshan Wang; Tian Sang; Fengli Wang; Yonggang Wu; Lingyan Chen
2008-01-01
Band structures of one-dimensional(1D)photonic crystals(PCs)containing dispersive left-handed metamaterials are studied theoretically.The results show that the structure possesses a type of photonic band gap originating from total internal reflection(TIR).In contrast to photonic band gaps corresponding to zero average refractive index and zero phase.the TIR gap exhibits sharp angular effect and has no polarization effect.It should also be noted that band structures of transverse electric(TE) and transverse magnetic(TM) mode waves are exactly the same in the PCs we studied.
Kumar, Akash; Balasubramaniam, K. R.; Kangsabanik, Jiban; Vikram, Alam, Aftab
2016-11-01
Structural stability, electronic structure, and optical properties of CH3NH3BaI3 hybrid perovskite are examined from theory as well as experiment. Solution-processed thin films of CH3NH3BaI3 exhibited a high transparency in the wavelength range of 400-825 nm (1.5-3.1 eV for which the photon current density is highest in the solar spectrum) which essentially justifies a high band gap of 4 eV obtained by theoretical estimation. Also, the x-ray diffraction patterns of the thin films match well with the {00 l } peaks of the simulated pattern obtained from the relaxed unit cell of CH3NH3BaI3 , crystallizing in the I 4 /m c m space group, with lattice parameters, a =9.30 Å, c =13.94 Å. Atom projected density of state and band structure calculations reveal the conduction and valence band edges to be comprised primarily of barium d orbitals and iodine p orbitals, respectively. The larger band gap of CH3NH3BaI3 compared to CH3NH3PbI3 can be attributed to the lower electronegativity coupled with the lack of d orbitals in the valence band of Ba2 +. A more detailed analysis reveals the excellent chemical and mechanical stability of CH3NH3BaI3 against humidity, unlike its lead halide counterpart, which degrades under such conditions. We propose La to be a suitable dopant to make this compound a promising candidate for transparent conductor applications, especially for all perovskite solar cells. This claim is supported by our calculated results on charge concentration, effective mass, and vacancy formation energies.
Enlargement of Photonic Band Gaps and Physical Picture of Photonic Band Structures
Institute of Scientific and Technical Information of China (English)
ZHANG Yan; SHI Jun-Jie
2006-01-01
@@ Light propagation in a one-dimensional photonic crystal (PC), consisting of alternative slabs with refractive indices (layer thicknesses) n1 (a) and n2 (b), is investigated. An important optimal parameter matching condition,n1a ≈ n2b, is obtained for the largest photonic band gap (PBG). Moreover, we find that the exact analytical solutions for the electric/magnetic field eigenmodes at the band edges are standing waves with odd or even symmetry about the centre of each layer. The electric/magnetic field eigenfunctions at the top and bottom of the nth band have n and n - 1 nodes in one period of PC, respectively. The PBG arises from the symmetric differences of the field eigenfunctions at the band edges.
Surface band-gap narrowing in quantized electron accumulation layers.
King, P D C; Veal, T D; McConville, C F; Zúñiga-Pérez, J; Muñoz-Sanjosé, V; Hopkinson, M; Rienks, E D L; Jensen, M Fuglsang; Hofmann, Ph
2010-06-25
An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering.
Directory of Open Access Journals (Sweden)
A. Kumar
2015-09-01
Full Text Available The single crystal growth of tetrachloromercurate (II [HM-1] and tetrachlorozincate (II [HM-2] with 2-amino-5-chloropyridine has been performed by slow cooling (SC crystal growth technique of solution growth methodin which needle shaped transparent single crystals (0.5 x 0.2 x 0.2mm were obtained. The crystal structures of these hybrid materials have been studied by X-ray diffraction, experimental and computational methods. [HgCl4]2- anions have a distorted tetrahedral geometry and the tetrahedra hybrid structure exhibit interwoven inorganic-organic layers mingled through N-Hδ+...Clδ- hydrogen bonding interactions. The mercurophilic interactions [Hg...Hg = 3.984(5Å] and halogen interactions [Cl...Cl = 3.406(2Å] form 2D parallelogram pattern of secondary interactions in [HM-1] whereas for [HM-2] crystal structure is stabilized by Cl...Cl = 3.357(2Å interactions. UV-vis absorption spectra depict the change in optical band gap from 3.01 eV to 3.42 eV on replacing the metal halide group, could be due to increase in optical absorption as a function of wavelength. The Raman and Hyper-Raman tensors calculations were performed based on single crystal X-ray data and the Lagrangian strain tensor calculations show the degree of lattice distortion = 1.794 between [HM-1] and [HM-2] which are useful tools for the optical response properties of inorganic-organic hybrid derivatives. The photoluminescence emission spectra peaks were observed in the wavelength range of 371 to 598 nm for material [HM-1] and in the wavelength range of 384 to 600 nm for material [HM-2] and lie in the visible range for both materials.
Anhydrous crystals of DNA bases are wide gap semiconductors.
Maia, F F; Freire, V N; Caetano, E W S; Azevedo, D L; Sales, F A M; Albuquerque, E L
2011-05-07
We present the structural, electronic, and optical properties of anhydrous crystals of DNA nucleobases (guanine, adenine, cytosine, and thymine) found after DFT (Density Functional Theory) calculations within the local density approximation, as well as experimental measurements of optical absorption for powders of these crystals. Guanine and cytosine (adenine and thymine) anhydrous crystals are predicted from the DFT simulations to be direct (indirect) band gap semiconductors, with values 2.68 eV and 3.30 eV (2.83 eV and 3.22 eV), respectively, while the experimentally estimated band gaps we have measured are 3.83 eV and 3.84 eV (3.89 eV and 4.07 eV), in the same order. The electronic effective masses we have obtained at band extremes show that, at low temperatures, these crystals behave like wide gap semiconductors for electrons moving along the nucleobases stacking direction, while the hole transport are somewhat limited. Lastly, the calculated electronic dielectric functions of DNA nucleobases crystals in the parallel and perpendicular directions to the stacking planes exhibit a high degree of anisotropy (except cytosine), in agreement with published experimental results.
Review of wide band-gap semiconductors technology
Directory of Open Access Journals (Sweden)
Jin Haiwei
2016-01-01
Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.
Incomplete photonic band gap as inferred from the speckle pattern of scattered light waves.
Apalkov, V M; Raikh, M E; Shapiro, B
2004-06-25
Motivated by recent experiments on intensity correlations of the waves transmitted through disordered media, we demonstrate that the speckle pattern from disordered photonic crystal with incomplete band gap represents a sensitive tool for determination of the stop-band width. We establish the quantitative relation between this width and the angular anisotropy of the intensity correlation function.
Isotropic properties of the photonic band gap in quasicrystals with low-index contrast
Rose, Priya; Abbate, G; Andreone, A
2011-01-01
We report on the formation and development of the photonic band gap in two-dimensional 8-, 10- and 12-fold symmetry quasicrystalline lattices of low index contrast. Finite size structures made of dielectric cylindrical rods were studied and measured in the microwave region, and their properties compared with a conventional hexagonal crystal. Band gap characteristics were investigated by changing the direction of propagation of the incident beam inside the crystal. Various angles of incidence from 0 \\degree to 30\\degree were used in order to investigate the isotropic nature of the band gap. The arbitrarily high rotational symmetry of aperiodically ordered structures could be practically exploited to manufacture isotropic band gap materials, which are perfectly suitable for hosting waveguides or cavities.
Maximizing phononic band gaps in piezocomposite materials by means of topology optimization.
Vatanabe, Sandro L; Paulino, Glaucio H; Silva, Emílio C N
2014-08-01
Phononic crystals (PCs) can exhibit phononic band gaps within which sound and vibrations at certain frequencies do not propagate. In fact, PCs with large band gaps are of great interest for many applications, such as transducers, elastic/acoustic filters, noise control, and vibration shields. Previous work in the field concentrated on PCs made of elastic isotropic materials; however, band gaps can be enlarged by using non-isotropic materials, such as piezoelectric materials. Because the main property of PCs is the presence of band gaps, one possible way to design microstructures that have a desired band gap is through topology optimization. Thus in this work, the main objective is to maximize the width of absolute elastic wave band gaps in piezocomposite materials designed by means of topology optimization. For band gap calculation, the finite element analysis is implemented with Bloch-Floquet theory to solve the dynamic behavior of two-dimensional piezocomposite unit cells. Higher order frequency branches are investigated. The results demonstrate that tunable phononic band gaps in piezocomposite materials can be designed by means of the present methodology.
Flexural vibration band gaps in thin plates with two-dimensional binary locally resonant structures
Institute of Scientific and Technical Information of China (English)
Yu Dian-Long; Wang Gang; Liu Yao-Zong; Wen Ji-Hong; Qiu Jing
2006-01-01
The complete flexural vibration band gaps are studied in the thin plates with two-dimensional binary locally resonant structures, i.e. the composite plate consisting of soft rubber cylindrical inclusions periodically placed in a host material. Numerical simulations show that the low-frequency gaps of flexural wave exist in the thin plates. The width of the first gap decreases monotonically as the matrix density increases. The frequency response of the finite periodic thin plates is simulated by the finite element method, which provides attenuations of over 20dB in the frequency range of the band gaps. The findings will be significant in the application of phononic crystals.
Hypersonic modulation of light in three-dimensional photonic and phononic band-gap materials.
Akimov, A V; Tanaka, Y; Pevtsov, A B; Kaplan, S F; Golubev, V G; Tamura, S; Yakovlev, D R; Bayer, M
2008-07-18
The elastic coupling between the a-SiO2 spheres composing opal films brings forth three-dimensional periodic structures which besides a photonic stop band are predicted to also exhibit complete phononic band gaps. The influence of elastic crystal vibrations on the photonic band structure has been studied by injection of coherent hypersonic wave packets generated in a metal transducer by subpicosecond laser pulses. These studies show that light with energies close to the photonic band gap can be efficiently modulated by hypersonic waves.
Multiple higher-order stop gaps in infrared polymer photonic crystals.
Straub, M; Ventura, M; Gu, M
2003-07-25
Engineering of stop gaps between higher photonic bands provides an alternative to miniaturization of photonic crystals. Femtosecond laser microfabrication of highly correlated void channel polymer microstructures results in photonic crystals with large stop gaps and a multitude of higher-order gaps in the mid- and near-infrared spectral regions. The gap wavelengths obey Bragg's law. Consistent with theory, varying the woodpile structure unit cell allows for tuning the number of higher-order gaps, and transitions from mere resonant Bragg scattering to stop band total reflection are observed.
Solid state dielectric screening versus band gap trends and implications
Ravichandran, Ram; Wang, Alan X.; Wager, John F.
2016-10-01
High-frequency (optical) and low-frequency (static) dielectric constant versus band gap trends, as well as index of refraction versus band gap trends are plotted for 107 inorganic semiconductors and insulators. These plots are describable via power-law fitting. Dielectric screening trends that emerge from this analysis have important optical and electronic implications. For example, barrier lowering during Schottky emission, phonon-assisted or Fowler-Nordheim tunneling, or Frenkel-Poole emission from a trap is found to be significantly more pronounced with increasing band gap due to a reduction in the optical dielectric constant with increasing band gap. The decrease in the interface state density with increasing band gap is another optical dielectric constant trend. The tendency for a material with a wider band gap to be more difficult to dope is attributed to an increase in the ionization energy of the donor or acceptor dopant, which in turn, depends on the optical dielectric constant and the effective mass. Since the effective mass for holes is almost always larger than that for electrons, p-type doping is more challenging than n-type doping in a wide band gap material. Finally, the polar optical phonon-limited mobility depends critically upon the reciprocal difference of the optical and the static dielectric constant. Consequently, electron and hole mobility tend to decrease with increasing band gap in a polar material.
Sub-band-gap laser micromachining of lithium niobate
DEFF Research Database (Denmark)
Christensen, F. K.; Müllenborn, Matthias
1995-01-01
method is reported which enables us to do laser processing of lithium niobate using sub-band-gap photons. Using high scan speeds, moderate power densities, and sub-band-gap photon energies results in volume removal rates in excess of 106µm3/s. This enables fast micromachining of small piezoelectric...
Designer disordered materials with large complete photonic band gaps
Florescu, Marian; Steinhardt, Paul J; 10.1073/pnas.0907744106
2010-01-01
We present designs of 2D isotropic, disordered photonic materials of arbitrary size with complete band gaps blocking all directions and polarizations. The designs with the largest gaps are obtained by a constrained optimization method that starts from a hyperuniform disordered point pattern, an array of points whose number variance within a spherical sampling window grows more slowly than the volume. We argue that hyperuniformity, combined with uniform local topology and short-range geometric order, can explain how complete photonic band gaps are possible without long-range translational order. We note the ramifications for electronic and phononic band gaps in disordered materials.
Strain modulated band gap of edge passivated armchair graphene nanoribbons
Peng, Xihong
2011-01-01
First principles calculations were performed to study strain effects on band gap of armchair graphene nanoribbons (AGNRs)with different edge passivation, including H, O, and OH group. The band gap of the H-passivated AGNRs shows a nearly periodic zigzag variation under strain. For O and OH passivation, the zigzag patterns are significantly shifted by a modified quantum confinement due to the edges. In addition, the band gap of the O-passivated AGNRs experiences a direct-to-indirect transition with sufficient tensile strain (~5%). The indirect gap reduces to zero with further increased strain.
Band structures in Sierpinski triangle fractal porous phononic crystals
Energy Technology Data Exchange (ETDEWEB)
Wang, Kai; Liu, Ying, E-mail: yliu5@bjtu.edu.cn; Liang, Tianshu
2016-10-01
In this paper, the band structures in Sierpinski triangle fractal porous phononic crystals (FPPCs) are studied with the aim to clarify the effect of fractal hierarchy on the band structures. Firstly, one kind of FPPCs based on Sierpinski triangle routine is proposed. Then the influence of the porosity on the elastic wave dispersion in Sierpinski triangle FPPCs is investigated. The sensitivity of the band structures to the fractal hierarchy is discussed in detail. The results show that the increase of the hierarchy increases the sensitivity of ABG (Absolute band gap) central frequency to the porosity. But further increase of the fractal hierarchy weakens this sensitivity. On the same hierarchy, wider ABGs could be opened in Sierpinski equilateral triangle FPPC; whilst, a lower ABG could be opened at lower porosity in Sierpinski right-angled isosceles FPPCs. These results will provide a meaningful guidance in tuning band structures in porous phononic crystals by fractal design.
Local density of optical states in the band gap of a finite photonic crysta
Yeganegi, Elahe; Mosk, Allard P; Vos, Willem L
2014-01-01
We study the local density of states (LDOS) in a finite photonic crystal, in particular in the frequency range of the band gap. We propose a new point of view on the band gap, which we consider to be the result of vacuum fluctuations in free space that tunnel in the forbidden range in the crystal. As a result, we arrive at a model for the LDOS that is in two major items modified compared to the well-known expression for infinite crystals. Firstly, we modify the Dirac delta functions to become Lorentzians with a width set by the crystal size. Secondly, building on characterization of the fields versus frequency and position we calculated the fields in the band gap. We start from the fields at the band edges, interpolated in space and position, and incorporating the exponential damping in the band gap. We compare our proposed model to exact calculations in one dimension using the transfer matrix method and find very good agreement. Notably, we find that in finite crystals, the LDOS depends on frequency, on posi...
Molecular doping and band-gap opening of bilayer graphene.
Samuels, AJ; Carey, JD
2013-01-01
The ability to induce an energy band gap in bilayer graphene is an important development in graphene science and opens up potential applications in electronics and photonics. Here we report the emergence of permanent electronic and optical band gaps in bilayer graphene upon adsorption of π electron containing molecules. Adsorption of n- or p-type dopant molecules on one layer results in an asymmetric charge distribution between the top and bottom layers and in the formation of an energy gap. ...
Band Gaps of an Amorphous Photonic Materials
Institute of Scientific and Technical Information of China (English)
WANG Yi-Quan; FENG Zhi-Fang; HU Xiao-Yong; CHENG Bing-Ying; ZHANG Dao-Zhong
2004-01-01
@@ A new kind of amorphous photonic materials is presented. Both the simulated and experimental results show that although the disorder of the whole dielectric structure is strong, the amorphous photonic materials have two photonic gaps. This confirms that the short-range order is an essential factor for the formation of the photonic gaps.
Band gap engineering of N-alloyed Ga2O3 thin films
Directory of Open Access Journals (Sweden)
Dongyu Song
2016-06-01
Full Text Available The authors report the tuning of band gap of GaON ternary alloy in a wide range of 2.75 eV. The samples were prepared by a two-step nitridation method. First, the samples were deposited on 2-inch fused silica substrates by megnetron sputtering with NH3 and Ar gas for 60 minutes. Then they were annealed in NH3 ambience at different temperatures. The optical band gap energies are calculated from transmittance measurements. With the increase of nitridation temperature, the band gap gradually decreases from 4.8 eV to 2.05 eV. X-ray diffraction results indicate that as-deposited amorphous samples can crystallize into monoclinic and hexagonal structures after they were annealed in oxygen or ammonia ambience, respectively. The narrowing of the band gap is attributed to the enhanced repulsion of N2p -Ga3d orbits and formation of hexagonal structure.
Nonideal anion displacement, band gap variation, and valence band splitting in Cu-In-Se compounds
Energy Technology Data Exchange (ETDEWEB)
Reena Philip, Rachel [Solid State Physics Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi-682022 Kerala (India)]. E-mail: reenatara@cusat.ac.in; Pradeep, B. [Solid State Physics Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi-682022 Kerala (India)
2005-01-24
Polycrystalline thin films of ternary chalcopyrite CuInSe{sub 2} and defect compounds CuIn{sub 3}Se{sub 5} and CuIn{sub 5}Se{sub 8} are prepared in vacuum by three-source coevaporation method. Structural and optical characterizations of the films are done using X-ray diffraction (XRD), energy-dispersive X-ray analysis (EDAX), and optical absorbance spectra measurements. With variation in the composition of CuInSe{sub 2}, a change over from p-type to n-type conductivity is observed (as noted by the hot probe method). The deformation parameters and the anion displacements are calculated from the X-ray diffraction data, and the cation-anion bond lengths are deduced. The dependence of band gap variation on nonideal anion displacement in the ternary compounds and the effect of Se-p-Cu-d repulsion on band gap are studied. The threefold optical structure observed in the fundamental absorption region of the absorption spectra is analysed to extract the valence band splitting parameters. Hopfields quasi-cubic model adapted for chalcopyrites with tetragonal deformation is used to determine the crystal field splittings and spin orbit splittings, and the linear hybridization model is used to calculate the percentage of d-orbital and p-orbital contribution to hybridization in the compounds under consideration.
Band gap scaling laws in group IV nanotubes
Wang, Chongze; Fu, Xiaonan; Guo, Yangyang; Guo, Zhengxiao; Xia, Congxin; Jia, Yu
2017-03-01
By using the first-principles calculations, the band gap properties of nanotubes formed by group IV elements have been investigated systemically. Our results reveal that for armchair nanotubes, the energy gaps at K points in the Brillouin zone decrease as 1/r scaling law with the radii (r) increasing, while they are scaled by ‑1/r 2 + C at Γ points, here, C is a constant. Further studies show that such scaling law of K points is independent of both the chiral vector and the type of elements. Therefore, the band gaps of nanotubes for a given radius can be determined by these scaling laws easily. Interestingly, we also predict the existence of indirect band gap for both germanium and tin nanotubes. Our new findings provide an efficient way to determine the band gaps of group IV element nanotubes by knowing the radii, as well as to facilitate the design of functional nanodevices.
Reducing support loss in micromechanical ring resonators using phononic band-gap structures
Hsu, Feng-Chia; Hsu, Jin-Chen; Huang, Tsun-Che; Wang, Chin-Hung; Chang, Pin
2011-09-01
In micromechanical resonators, energy loss via supports into the substrates may lead to a low quality factor. To eliminate the support loss, in this paper a phononic band-gap structure is employed. We demonstrate a design of phononic-crystal (PC) strips used to support extensional wine-glass mode ring resonators to increase the quality factor. The PC strips are introduced to stop elastic-wave propagation by the band-gap and deaf-band effects. Analyses of resonant characteristics of the ring resonators and the dispersion relations, eigenmodes, and transmission properties of the PC strips are presented. With the proposed resonator architecture, the finite-element simulations show that the leaky power is effectively reduced and the stored energy inside the resonators is enhanced simultaneously as the operating frequencies of the resonators are within the band gap or deaf bands. Realization of a high quality factor micromechanical ring resonator with minimized support loss is expected.
Tuning the band gap in hybrid tin iodide perovskite semiconductors using structural templating.
Knutson, Jeremy L; Martin, James D; Mitzi, David B
2005-06-27
Structural distortions within the extensive family of organic/inorganic hybrid tin iodide perovskite semiconductors are correlated with their experimental exciton energies and calculated band gaps. The extent of the in- and out-of-plane angular distortion of the SnI4(2-) perovskite sheets is largely determined by the relative charge density and steric requirements of the organic cations. Variation of the in-plane Sn-I-Sn bond angle was demonstrated to have the greatest impact on the tuning of the band gap, and the equatorial Sn-I bond distances have a significant secondary influence. Extended Hückel tight-binding band calculations are employed to decipher the crystal orbital origins of the structural effects that fine-tune the band structure. The calculations suggest that it may be possible to tune the band gap by as much as 1 eV using the templating influence of the organic cation.
Reducing support loss in micromechanical ring resonators using phononic band-gap structures
Energy Technology Data Exchange (ETDEWEB)
Hsu, Feng-Chia; Huang, Tsun-Che; Wang, Chin-Hung; Chang, Pin [Industrial Technology Research Institute-South, Tainan 709, Taiwan (China); Hsu, Jin-Chen, E-mail: fengchiahsu@itri.org.t, E-mail: hsujc@yuntech.edu.t [Department of Mechanical Engineering, National Yunlin University of Science and Technology, Douliou, Yunlin 64002, Taiwan (China)
2011-09-21
In micromechanical resonators, energy loss via supports into the substrates may lead to a low quality factor. To eliminate the support loss, in this paper a phononic band-gap structure is employed. We demonstrate a design of phononic-crystal (PC) strips used to support extensional wine-glass mode ring resonators to increase the quality factor. The PC strips are introduced to stop elastic-wave propagation by the band-gap and deaf-band effects. Analyses of resonant characteristics of the ring resonators and the dispersion relations, eigenmodes, and transmission properties of the PC strips are presented. With the proposed resonator architecture, the finite-element simulations show that the leaky power is effectively reduced and the stored energy inside the resonators is enhanced simultaneously as the operating frequencies of the resonators are within the band gap or deaf bands. Realization of a high quality factor micromechanical ring resonator with minimized support loss is expected.
Optimum design of band-gap beam structures
DEFF Research Database (Denmark)
Olhoff, Niels; Niu, Bin; Cheng, Gengdong
2012-01-01
-sectional area. To study the band-gap for travelling waves, a repeated inner segment of the optimized beams is analyzed using Floquet theory and the waveguide finite element (WFE) method. Finally, the frequency response is computed for the optimized beams when these are subjected to an external time......The design of band-gap structures receives increasing attention for many applications in mitigation of undesirable vibration and noise emission levels. A band-gap structure usually consists of a periodic distribution of elastic materials or segments, where the propagation of waves is impeded...
Band gap effects of hexagonal boron nitride using oxygen plasma
Energy Technology Data Exchange (ETDEWEB)
Sevak Singh, Ram; Leong Chow, Wai [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Yingjie Tay, Roland [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Hon Tsang, Siu [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Mallick, Govind [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Weapons and Materials Research Directorate, U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States); Tong Teo, Edwin Hang, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
2014-04-21
Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.
Estimation of the band gap of InPO4
Wager, J. F.; Wilmsen, C. W.; Kazmerski, L. L.
1983-04-01
The band gap of a thin layer of InPO4 was estimated to be 4.5 eV using a novel approach employing ultraviolet photoelectron spectroscopy and electron energy loss spectroscopy. The technique measures the conduction-band minimum and valence-band maximum referenced to the In 4d core line energy. Since this technique is highly surface sensitive, it can be used to measure the band gap of a thin layer. This parameter is difficult to measure in such layers using conventional techniques.
Quantum speedup of an atom coupled to a photonic-band-gap reservoir
Wu, Yu-Nan; Wang, Jing; Zhang, Han-Zhuang
2017-01-01
For a model of an atom embedded in a photonic-band-gap reservoir, it was found that the speedup of quantum evolution is subject to the atomic frequency changes. In this work, we propose different points of view on speeding up the evolution. We show that the atomic embedded position, the width of the band gap and the defect mode also play an important role in accelerating the evolution. By changing the embedded position of the atom and the coupling strength with the defect mode, the speedup region lies even outside the band-gap region, where the non-Markovian effect is weak. The mechanism for the speedup is due to the interplay of atomic excited population and the non-Markovianity. The feasible experimental system composed of quantum dots in the photonic crystal is discussed. These results provide new degree of freedoms to depress the quantum speed limit time in photonic crystals.
II-VI wide band gap semiconductors under hydrostatic pressure
Baquero, R.; Decoss, R.; Olguin, D.
1993-08-01
We set an analytical expression for the gap as a function of hydrostatic deformation, E(sub g)(epsilon), by diagonalizing in Gamma the corresponding empirical tight-binding Hamiltonian (ETBH). In the ETBH we use the well known d(exp -2) Harrison scaling law (HSL) to adjust the TB parameter (TBP) to the changes in interatomic distances. We do not consider cation-anion charge transfer. We calculate E(sub g)(epsilon) for wide band gap II-VI semiconductors with zincblende crystal structure for deformations under pressure up to -5 percent. Results are in good agreement with experiment for the compounds of lower ionicity but deviate as the ionicity of the compound increases. This is due to the neglect of charge transfer which should be included self-consistently. Within the approximation we always find a positive second derivative of E(sub g)(epsilon) with respect to epsilon, independent of the material. Furthermore, the inclusion of deviations from HSL appear to be unimportant to this problem.
Symmetry-Driven Band Gap Engineering in Hydrogen Functionalized Graphene
DEFF Research Database (Denmark)
Jørgensen, Jakob Holm; Grubisic Cabo, Antonija; Balog, Richard;
2016-01-01
Band gap engineering in hydrogen functionalized graphene is demonstrated by changing the symmetry of the functionalization structures. Small differences in hydrogen adsorbate binding energies on graphene on Ir(111) allow tailoring of highly periodic functionalization structures favoring one disti...
Band Gap Properties of Magnetoelectroelastic Grid Structures with Initial Stress
Institute of Scientific and Technical Information of China (English)
WANG Yi-Ze; LI Feng-Ming
2012-01-01
The propagation of elastic waves in magnetoelectroelastic grid structures is studied.Band gap properties are presented and the effects of the magnetoelectroelastic coupling and initial stress are considered. Numerical calculations are performed using the plane-wave expansion method.The results show that the band gap width can be tuned by the initial stress.It is hoped that our results will be helpful for designing acoustic filters with magnetoelectroelastic materials and grid structures.
Amorphous Photonic Lattices: Band Gaps, Effective Mass and Suppressed Transport
Rechtsman, Mikael; Szameit, Alexander; Dreisow, Felix; Heinrich, Matthias; Keil, Robert; Nolte, Stefan; Segev, Mordechai
2010-01-01
We present, theoretically and experimentally, amorphous photonic lattices exhibiting a band-gap yet completely lacking Bragg diffraction: 2D waveguides distributed randomly according to a liquid-like model responsible for the absence of Bragg peaks as opposed to ordered lattices containing disorder, which always exhibit Bragg peaks. In amorphous lattices the bands are comprised of localized states, but we find that defect states residing in the gap are more localized than the Anderson localiz...
Photonic crystal waveguides based on wide-gap semiconductor alloys
Martin, Aude; Combrié, Sylvain; De Rossi, Alfredo
2017-03-01
This review is devoted to integrated photonic platforms based on large band-gap semiconductors, alternatives to silicon photonics. The large electronic band gap of the material employed is chosen to address the specific needs of nonlinear optics, and, in particular, lower nonlinear losses and the capability of handling larger optical power densities. Moreover, these new platforms offer broader transmission spectra, extending to the visible spectral region, which is also required for other applications, particularly sensing and bio-related photonics. The focus is on nanoscale patterned waveguiding structures, which, owing to the tight confinement of light, have demonstrated a large nonlinear response. The third-order nonlinear response and the related parametric interactions will be considered here, encompassing four-wave mixing, phase-sensitive amplification, wavelength conversion, and also nonlinear pulse propagation and soliton dynamics. The comparison between different materials and waveguide design highlights specific features of photonic crystal waveguides.
Band gap bowing in quaternary nitride semiconducting alloys
DEFF Research Database (Denmark)
Gorczyka, Isabela; Suski, T.; Christensen, Niels Egede;
2011-01-01
the composition and atomic arrangements are examined using a supercell geometry. An analytical expression for the band gap is derived for the entire range of compositions. The range of (x, y) values for which InxGayAl1−x−yN is lattice matched to GaN, and the ensuing energy gaps, are given. This range of available...
Acoustic band gaps in two-dimensional square arrays of semi-hollow circular cylinders
Institute of Scientific and Technical Information of China (English)
T.; Kim
2009-01-01
Concave surfaces focus sound while convex surfaces disperse sound. It is therefore interesting to know if it is possible to make use of these two opposite characteristics to enhance the band gap performance of periodic arrays of solid cylinders in air. In this paper, the band gap characteristics of a 2-D square array of semi-hollow circular cylinders embedded in air are investigated, both experimentally and theoretically. In comparison with the types of inclusion studied by previous researchers, a semi-hollow circular cylinder is unique in the sense that it has concave inner surfaces and convex outer surfaces. The finite difference time domain (FDTD) method is employed to study the propagation behavior of sound across the new phononic crystal of finite extent, and the influences of sample size and inclusion orientation on band gap characteristics are quantified in order to obtain the maximum band gap. For reference, the band gap behaviors of solid circular cylinder/air and hollow circular cylinder/air systems are considered and compared with those of semi-hollow circular cylinder/air systems. In addition to semi-hollow circular cylinders, other inclusion topologies such as semi-hollow triangular and square cylinders are also investigated. To validate the theoretical predictions, experimental measurements on square arrays of hollow Al cylinders in air and semi-hollow Al cylinders in air are carried out. The results demonstrate that the semi-hollow circular cylinder/air system has the best overall band gap performance.
Theoretical study on the two-band degenerate-gaps superconductors: Application to SrPt3P
Huang, Hai; Hou, Li-Chao; Zhao, Bin-Peng
2016-09-01
We study the magnetic properties of two-band degenerate-gaps superconductors with two-band isotropic Ginzburg-Landau theory. The exact solutions of upper critical field and London penetration depth are obtained, and the calculations reproduce the experimental data of the recently observed superconducting crystal SrPt3P in a broad temperature range. It directly underlies that SrPt3P is a multi-band superconductor with equal gaps in two Fermi surface sheets.
Molecular doping and band-gap opening of bilayer graphene.
Samuels, Alexander J; Carey, J David
2013-03-26
The ability to induce an energy band gap in bilayer graphene is an important development in graphene science and opens up potential applications in electronics and photonics. Here we report the emergence of permanent electronic and optical band gaps in bilayer graphene upon adsorption of π electron containing molecules. Adsorption of n- or p-type dopant molecules on one layer results in an asymmetric charge distribution between the top and bottom layers and in the formation of an energy gap. The resultant band gap scales linearly with induced carrier density though a slight asymmetry is found between n-type dopants, where the band gap varies as 47 meV/10(13) cm(-2), and p-type dopants where it varies as 40 meV/10(13) cm(-2). Decamethylcobaltocene (DMC, n-type) and 3,6-difluoro-2,5,7,7,8,8-hexacyano-quinodimethane (F2-HCNQ, p-type) are found to be the best molecules at inducing the largest electronic band gaps up to 0.15 eV. Optical adsorption transitions in the 2.8-4 μm region of the spectrum can result between states that are not Pauli blocked. Comparison is made between the band gaps calculated from adsorbate-induced electric fields and from average displacement fields found in dual gate bilayer graphene devices. A key advantage of using molecular adsorption with π electron containing molecules is that the high binding energy can induce a permanent band gap and open up possible uses of bilayer graphene in mid-infrared photonic or electronic device applications.
Band gap opening in graphene: a short theoretical study
Sahu, Sivabrata; Rout, G. C.
2017-03-01
Graphene, being a gapless semiconductor, cannot be used in pristine form for nano-electronic applications. Therefore, it is essential to generate a finite gap in the energy dispersion at Dirac point. We present here the tight-binding model Hamiltonian taking into account of various interactions for tuning band gap in graphene. The model Hamiltonian describes the hopping of the π-electrons up to third nearest-neighbours, substrate effects, Coulomb interaction at two sub-lattices, electron-phonon interaction in graphene-on-substrates and high phonon frequency vibrations, besides the bi-layer graphene. We have solved the Hamiltonian using Zubarev's double time single particle Green's function technique. The quasi-particle energies, electron band dispersions, the expression for effective band gap and the density of states (DOS) are calculated numerically. The results are discussed by varying different model parameters of the system. It is observed that the electron DOS and band dispersion exhibit linear energy dependence near Dirac point for nearest-neighbour hopping integral. However, the second and third nearest-neighbour hoppings provide asymmetry in DOS. The band dispersions exhibit wider band gaps with stronger substrate effect. The modified gap in graphene-on-substrate attains its maximum value for Coulomb interaction energy U_{C} = 1.7 t1 . The critical Coulomb interaction is enhanced to U_{C} = 2.5 t1 to produce maximum band gap in the presence of electron-phonon interaction and phonon vibration. The bi-layer graphene exhibits Mexican hat type band gap near Dirac point for transverse gating potential. The other conclusions for the present work are described in the text.
Multiband Terahertz Photonic Band Gaps of Subwavelength Planar Fractals
Institute of Scientific and Technical Information of China (English)
ZHAO Guo-Zhong; TIAN Yan; SUN Hong-Qi; ZHANG Cun-Lin; YANG Guo-Zhen
2006-01-01
Optical transmission properties of subwavelength planar fractals in terahertz (THz) frequency regime are studied by means of time-domain spectroscopy. The transmission spectra with multiple pass bands and stop bands are observed. The tunable photonic band gaps are realized by changing the angle between the principle axis of planar fractal and the polarization of THz wave. The possible application of the subwavelength optical component is discussed. We attribute the detected transmittance from subwavelength fractals to localized resonances.
Band Gap Engineering of Two-Dimensional Nitrogene
Li, Jie-Sen; Wang, Wei-Liang; Yao, Dao-Xin
2016-01-01
In our previous study, we have predicted the novel two-dimensional honeycomb monolayers of pnictogen. In particular, the structure and properties of the honeycomb monolayer of nitrogen, which we call nitrogene, are very unusual. In this paper, we make an in-depth investigation of its electronic structure. We find that the band structure of nitrogene can be engineered in several ways: controlling the stacking of monolayers, application of biaxial tensile strain, and application of perpendicular electric field. The band gap of nitrogene is found to decrease with the increasing number of layers. The perpendicular electric field can also reduce the band gap when it is larger than 0.18 V/Å, and the gap closes at 0.35 V/Å. A nearly linear dependence of the gap on the electric field is found during the process. Application of biaxial strain can decrease the band gap as well, and eventually closes the gap. After the gap-closing, we find six inequivalent Dirac points in the Brillouin zone under the strain between 17% and 28%, and the nitrogene monolayer becomes a Dirac semimetal. These findings suggest that the electronic structure of nitrogene can be modified by several techniques, which makes it a promising candidate for electronic devices. PMID:27680297
Photonic crystal digital alloys and their band structure properties.
Lee, Jeongkug; Kim, Dong-Uk; Jeon, Heonsu
2011-09-26
We investigated semi-disordered photonic crystals (PCs), digital alloys, and made thorough comparisons with their counterparts, random alloys. A set of diamond lattice PC digital alloys operating in a microwave regime were prepared by alternately stacking two kinds of sub-PC systems composed of alumina and silica spheres of the same size. Measured transmission spectra as well as calculated band structures revealed that when the digital alloy period is short, band-gaps of the digital alloys are practically the same as those of the random alloys. This study indicates that the concept of digital alloys holds for photons in PCs as well.
Band Gap Tuning of Armchair Graphene Nanoribbons by Using Antidotes
Zoghi, Milad; Goharrizi, Arash Yazdanpanah; Saremi, Mehdi
2017-01-01
The electronic properties of armchair graphene nanoribbons (AGNRs) can be changed by creating antidotes within the pristine ribbons and producing antidote super lattice AGNRs (ASL-AGNRs). In the present work, band gap tuning of ASL-AGNRs is investigated by varying the width of ribbons ( d W) and the distance between antidotes ( d L) for five different antidote topologies. Numerical tight-binding model is applied to obtain the band structure of the ribbons. Based on our results, it is found that the band gap of ASL-AGNRs can be increased or decreased in different cases. Furthermore, changing the width of ribbons generally results in more predictable␣band gap profiles compared to the variation of distance between antidotes. Consequently, by opting appropriate antidote topologies and dimensional parameters ( d W and d L), it is possible to gain a desired band gap size. This can be considered as an alternative solution in design of electronic and optoelectronic devices where tunable band gap values are needed.
Institute of Scientific and Technical Information of China (English)
Laxmi SHIVESHWARI
2011-01-01
Propagation of electromagnetic waves in one-dimensional plasma dielectric photonic crystals, the superlattice structure consisting of alternating plasma and dielectric materials, is studied theoretically for oblique incidence by using the transfer matrix method. Our results show that complete photonic band gaps for all polarizations can be obtained in one-dimensional plasma dielectric photonic crystals. These structures can exhibit a new type of band or gap, for the incidence other than the normal one, near frequencies where the electric permittivity of the plasma layer changes sign. This new band or gap arises, from the dispersive properties of the plasma layer, only for transverse magnetic polarized waves, and its width increases with the increase in incident angle. This differential behavior under polarization can be utilized in the design of an efficient polarization splitter. The existence of both photonic gaps and resonance transmission bands is demonstrated for experimentally realizable structures such as double electromagnetic barriers.
Institute of Scientific and Technical Information of China (English)
ZHANG Yan; SHI Jun-Jie
2008-01-01
A two-dimensional photonic crystal model with a periodic square dielectric background is proposed.The photonic band modulation effects due to the two-dimensional periodic background are investigated jn detail.It is found that periodic modulation of the dielectric background greatly alters photonic band structures,especially for the Epolarization modes.The number,width and position of the photonic band gaps sensitively depend on the dielectric constants of the two-dimensional periodic background.Complete band gaps are found,and the dependence of the widths of these gaps on the structural and material parameters of the two alternating rods/holes is studied.
Optical band gap of Sn0.2Bi1.8Te3 thin films
Indian Academy of Sciences (India)
P H Soni; M V Hathi; C F Desai
2003-12-01
Sn0.2Bi1.8Te3 thin films were grown using the thermal evaporation technique on a (001) face of NaCl crystal as a substrate at room temperature. The optical absorption was measured in the wave number range 500–4000 cm-1. From the optical absorption data the band gap was evaluated and studied as a function of film thickness and deposition temperature. The data indicate absorption through direct interband transition with a band gap of around 0.216 eV. The detailed results are reported here.
Kohn-Sham potential with discontinuity for band gap materials
Kuisma, M.; Ojanen, J.; Enkovaara, J.; Rantala, T. T.
2010-09-01
We model a Kohn-Sham potential with the discontinuity at integer particle numbers starting from the approximation by (GLLB) Gritsenko [Phys. Rev. A 51, 1944 (1995)10.1103/PhysRevA.51.1944]. We evaluate the Kohn-Sham gap and the discontinuity to obtain the quasiparticle gap. This allows us to compare the Kohn-Sham gaps to those obtained by accurate many-body perturbation-theory-based optimized potential methods. In addition, the resulting quasiparticle band gap is compared to experimental gaps. In the GLLB model potential, the exchange-correlation hole is modeled using a generalized gradient approximation (GGA) energy density and the response of the hole-to-density variations is evaluated by using the common-denominator approximation and homogeneous electron-gas-based assumptions. In our modification, we have chosen the PBEsol potential as the GGA to model the exchange hole and add a consistent correlation potential. The method is implemented in the GPAW code, which allows efficient parallelization to study large systems. A fair agreement for Kohn-Sham and the quasiparticle band gaps with semiconductors and other band gap materials is obtained with a potential which is as fast as GGA to calculate.
Institute of Scientific and Technical Information of China (English)
章海锋; 郑建平; 朱荣军
2012-01-01
The transfer matrix method was applied to study on the properties of tunable prohibited band gaps for one-dimensional ternary magnetized plasma photonic crystals with TE wave arbitrary incident under ideal conditions. TE wave would be divided into left-handed circularly polarized wave and right-handed circularly polarized wave after propagation through one-dimensional ternary magnetized plasma photonic crystals. The calculated transmission coefficients were used to analyze the effects of parameter of plasma, plasma filling factor, incident angle and relative dielectric constant for dielectric layer on the properties of tunable prohibited band gap. The results illustrate that the width of band gaps can not be broadened by increasing plasma collision frequency, the numbers and width of band gaps can be tuned by changing plasma frequency, plasma filling factor and relative dielectric constant for dielectric layer. The band gaps for right-handed circularly polarized wave can be tuned by the plasma gyro frequency, but band gaps for the left-handed circularly polarized wave can't influenced. Low-frequency region of band gaps will be broadened, while high-frequency region of band gaps will be firstly narrow and then broaden with increasing incident angle.%在理想条件下,为了研究等离子体参数、填充率、入射角度和介质层相对介电常数对一维三元磁化等离子体光子晶体的禁带特性的影响,用由传输矩阵法计算得到的TE波任意角度入射时的左旋极化波(LCP)和右旋极化波(RCP)的透射系数来研究其禁带特性.结果表明,仅增加等离子体碰撞频率不能实现禁带宽度的拓展,改变等离子体频率、填充率和介质层的相对介电常数能实现对禁带宽度和数目的调谐.改变等离子体回旋频率能实现对右旋极化波的禁带的调谐,但对左旋极化波的禁带几乎无影响.入射角度的增大使得禁带低频区域带宽变大,而高频区域带宽则是将先减小再增大.
TUNABLE Band Structures of 2d Multi-Atom Archimedean-Like Phononic Crystals
Xu, Y. L.; Chen, C. Q.; Tian, X. G.
2012-06-01
Two dimensional multi-atom Archimedean-like phononic crystals (MAPCs) can be obtained by adding "atoms" at suitable positions in primitive cells of traditional simple lattices. Band structures of solid-solid and solid-air MAPCs are computed by the finite element method in conjunction with the Bloch theory. For the solid-solid system, our results show that the MAPCs can be suitably designed to split and shift band gaps of the corresponding traditional simple phononic crystal (i.e., with only one scatterer inside a primitive cell). For the solid-air system, the MAPCs have more and wider band gaps than the corresponding traditional simple phononic crystal. Numerical calculations for both solid-solid and solid-air MAPCs show that the band gap of traditional simple phononic crystal can be tuned by appropriately adding "atoms" into its primitive cell.
Improvement of band selectivity of electromagnetic crystals
Directory of Open Access Journals (Sweden)
Nazarko A. I.
2009-11-01
Full Text Available The estimation of crystal-like structures band selectivity is considered. Methods of increasing of electromagnetic crystal’s selectivity are proposed. The experimental and theoretical characteristics illustrating possibility of substantial improvement of spectral properties of such structures are presented.
Uniaxially stressed germanium with fundamental direct band gap
Geiger, R.; Zabel, T.; Marin, E; Gassenq, A.; Hartmann, J.-M.; Widiez, J.; Escalante, J.; Guilloy, K.; Pauc, N.; Rouchon, D.; Diaz, G. Osvaldo; Tardif, S; Rieutord, F.; Duchemin, I.; Niquet, Y. -M.
2015-01-01
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with n...
Wide band gap carbon allotropes: Inspired by zeolite-nets
Wei, Zhi-Jing; Zhao, Hui-Yan; Wang, Jing; Liu, Ying
2016-10-01
Based on the topologies proposed for zeolites, six metastable semiconductor carbon allotropes with band gaps of 2.72-3.89 eV are predicted using ab initio density functional calculations. The hardnesses of these allotropes are about 90%-94% that of diamond, indicating that they may be superhard materials. We also present simulated X-ray diffraction spectra of these new carbon allotropes to provide a basis for possible experimental observations and synthesis. These new carbon structures with a range of band gaps and with hardnesses comparable to diamond could be potential targets for the synthesis of hard and transparent materials.
Amorphous Photonic Lattices: Band Gaps, Effective Mass and Suppressed Transport
Rechtsman, Mikael; Dreisow, Felix; Heinrich, Matthias; Keil, Robert; Nolte, Stefan; Segev, Mordechai
2010-01-01
We present, theoretically and experimentally, amorphous photonic lattices exhibiting a band-gap yet completely lacking Bragg diffraction: 2D waveguides distributed randomly according to a liquid-like model responsible for the absence of Bragg peaks as opposed to ordered lattices containing disorder, which always exhibit Bragg peaks. In amorphous lattices the bands are comprised of localized states, but we find that defect states residing in the gap are more localized than the Anderson localization length. Finally, we show how the concept of effective mass carries over to amorphous lattices.
Large area modules based on low band gap polymers
DEFF Research Database (Denmark)
Bundgaard, Eva; Krebs, Frederik C
2010-01-01
The use of three low band gap polymers in large area roll-to-roll coated modules is demonstrated. The polymers were prepared by a Stille cross coupling polymerization and all had a band gap around 1.6 eV. The polymers were first tested in small area organic photovoltaic devices which showed...... efficiencies from 0.4 to 2 %. Then large area roll-to-roll coated modules were processed and these showed efficiencies up to 0.6 %. It is clear that further study is necessary before this type of polymer is competitive with P3HT in large area modules....
Band gap tuning of amorphous Al oxides by Zr alloying
DEFF Research Database (Denmark)
Canulescu, Stela; Jones, N. C.; Borca, C. N.;
2016-01-01
minimum changes non-linearly as well.Fitting of the energy band gap values resulted in a bowing parameter of 2 eV. The band gap bowing of themixed oxides is assigned to the presence of the Zr d-electron states localized below the conduction bandminimum of anodized Al2O3.......The optical band gap and electronic structure of amorphous Al-Zr mixed oxides, with Zr content ranging from4.8 to 21.9% were determined using vacuum ultraviolet (VUV) and X-ray absorption spectroscopy (XAS). Thelight scattering by the nano-porous structure of alumina at low wavelengths...... was estimated based on the Miescattering theory. The dependence of the optical band gap of the Al-Zr mixed oxides on Zr content deviatesfrom linearity and decreases from 7.3 eV for pure anodized Al2O3 to 6.45 eV for Al-Zr mixed oxide with Zrcontent of 21.9%. With increasing Zr content, the conduction band...
The band gap of II-Vi ternary alloys in a tight-binding description
Energy Technology Data Exchange (ETDEWEB)
Olguin, Daniel; Blanquero, Rafael [Instituto Politecnico Nacional, Mexico, D.F (Mexico); De Coss, Romeo [Instituto Politecnico Nacional, Yucatan (Mexico)
2001-02-01
We present tight-binding calculations for the band gap of II-Vi pseudobinary ternary alloys. We use an sp{sup 3} s* tight-binding Hamiltonian which include spin-orbit coupling. The band gap composition dependence is calculated using a extended version of the virtual crystal approximation, which introduce an empirical correction factor that takes into account the non-linear dependence of the band gap with the composition. The results compare quite well with the experimental data, both for the ternary alloys with wide band gap and for the narrow band gap ones. [Spanish] Presentamos el calculo de la banda de energia prohibida de aleaciones ternarias de compuestos II-VI. El calculo, que incluye interaccion espin-orbita, se hace con el metodo de enlace fuerte, utilizando una base ortogonal de cinco orbitales atomicos por atomo (sp{sup 3} s*), en conjunto con la aproximacion del cristal virtual. En la aproximacion del cristal virtual, incluimos un factor de correccion que toma en cuenta la no linealidad de la banda de energia prohibida como funcion de la concentracion. Con esta correccion nuestros resultados reproducen aceptablemente los datos experimentales hallados en la literatura.
Diaz-Valencia, B. F.; Calero, J. M.
2017-02-01
In this work, we use the plane wave expansion method to calculate photonic band structures in two-dimensional photonic crystals which consist of high-temperature superconducting hollow rods arranged in a triangular lattice. The variation of the photonic band structure with respect to both, the inner radius and the system temperature, is studied, taking into account temperatures below the critical temperature of the superconductor in the low frequencies regime and assuming E polarization of the incident light. Permittivity contrast and nontrivial geometry of the hollow rods lead to the appearance of new band gaps as compared with the case of solid cylinders. Such band gaps can be modulated by means of the inner radius and system temperature.
Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon.
Zhu, Zhen; Shao, Hezhu; Dong, Xiao; Li, Ning; Ning, Bo-Yuan; Ning, Xi-Jing; Zhao, Li; Zhuang, Jun
2015-05-27
We investigated the atomic geometry, electronic band structure, and optical absorption of nitrogen hyperdoped silicon based on first-principles calculations. The results show that all the paired nitrogen defects we studied do not introduce intermediate band, while most of single nitrogen defects can introduce intermediate band in the gap. Considering the stability of the single defects and the rapid resolidification following the laser melting process in our sample preparation method, we conclude that the substitutional nitrogen defect, whose fraction was tiny and could be neglected before, should have considerable fraction in the hyperdoped silicon and results in the visible sub-band-gap absorption as observed in the experiment. Furthermore, our calculations show that the substitutional nitrogen defect has good stability, which could be one of the reasons why the sub-band-gap absorptance remains almost unchanged after annealing.
Obtaining the band structure of a complicated photonic crystal by linear operations
Institute of Scientific and Technical Information of China (English)
吴良; 叶卓; 何赛灵
2003-01-01
Absolute band gaps can be created by lifting the degeneracy in the bands of a photonic crystal.To calculate the band structure of a complicated photonic crystal generated by e.g.symmetry breaking,general forms of all possible linear operations are presented in terms of matrices and a procedure to combine these operations is given.Other forms of linear operations(such as the addition,subtraction,and translation transforms) are also presented to obtain an explicit expression for the Fourier coefficient of the dielectric function in the plane-wave expansion method.With the present method,band structures for various complicated photonic crystals(related through these linear operations) can be obtained easily and quickly.As a numerical example,a large absolute band gap for a complicated photonic crystal structure of GaAs is found in the high region of normalized frequency.
The Development of Layered Photonic Band Gap Structures Using a Micro-Transfer Molding Technique
Energy Technology Data Exchange (ETDEWEB)
Sutherland, Kevin Jerome [Iowa State Univ., Ames, IA (United States)
2001-01-01
Photonic band gap (PBG) crystals are periodic dielectric structures that manipulate electromagnetic radiation in a manner similar to semiconductor devices manipulating electrons. Whereas a semiconductor material exhibits an electronic band gap in which electrons cannot exist, similarly, a photonic crystal containing a photonic band gap does not allow the propagation of specific frequencies of electromagnetic radiation. This phenomenon results from the destructive Bragg diffraction interference that a wave propagating at a specific frequency will experience because of the periodic change in dielectric permitivity. This gives rise to a variety of optical applications for improving the efficiency and effectiveness of opto-electronic devices. These applications are reviewed later. Several methods are currently used to fabricate photonic crystals, which are also discussed in detail. This research involves a layer-by-layer micro-transfer molding ({mu}TM) and stacking method to create three-dimensional FCC structures of epoxy or titania. The structures, once reduced significantly in size can be infiltrated with an organic gain media and stacked on a semiconductor to improve the efficiency of an electronically pumped light-emitting diode. Photonic band gap structures have been proven to effectively create a band gap for certain frequencies of electro-magnetic radiation in the microwave and near-infrared ranges. The objective of this research project was originally two-fold: to fabricate a three dimensional (3-D) structure of a size scaled to prohibit electromagnetic propagation within the visible wavelength range, and then to characterize that structure using laser dye emission spectra. As a master mold has not yet been developed for the micro transfer molding technique in the visible range, the research was limited to scaling down the length scale as much as possible with the current available technology and characterizing these structures with other methods.
Institute of Scientific and Technical Information of China (English)
刘名扬; 贺珍妮; 张向东
2013-01-01
Transfer matrix method is used to analyze the transmission spectra of one dimensional photon-ic crystals with negative refractive index material and positive refractive index material alternant struc-ture .The bang gaps and dispersive relation of one dimensional photonic crystal are analyzed .The gener-al Bragg gaps and the resonant gap of low frequency exist in the photonic crystal .We also research local-ization of electromagnetic waves in one-dimension random system containing the left-handed material .%采用传递矩阵的方法研究了由正折射率材料和负折射率材料交替排列组成的一维光子晶体结构的透射谱，并对其能带结构和色散关系进行分析，这种正负折射率光子晶体不仅存在一般的布拉格禁带，还存在低频共振禁带。本文也对含左手材料的一维无序结构的局域化进行了分析研究。
Theory of band gap bowing of disordered substitutional II-VI and III-V semiconductor alloys
2011-01-01
For a wide class of technologically relevant compound III-V and II-VI semiconductor materials AC and BC mixed crystals (alloys) of the type A(x)B(1-x)C can be realized. As the electronic properties like the bulk band gap vary continuously with x, any band gap in between that of the pure AC and BC systems can be obtained by choosing the appropriate concentration x, granted that the respective ratio is miscible and thermodynamically stable. In most cases the band gap does not vary linearly with...
Study of indium nitride and indium oxynitride band gaps
Directory of Open Access Journals (Sweden)
M. Sparvoli
2013-01-01
Full Text Available This work shows the study of the optical band gap of indium oxynitride (InNO and indium nitride (InN deposited by magnetron reactive sputtering. InNO shows multi-functionality in electrical and photonic applications, transparency in visible range, wide band gap, high resistivity and low leakage current. The deposition processes were performed in a magnetron sputtering system using a four-inches pure In (99.999% target and nitrogen and oxygen as plasma gases. The pressure was kept constant at 1.33 Pa and the RF power (13.56 MHz constant at 250 W. Three-inches diameter silicon wafer with 370 micrometer thickness and resistivity in the range of 10 ohm-centimeter was used as substrate. The thin films were analyzed by UV-Vis-NIR reflectance, photoluminescence (PL and Hall Effect. The band gap was obtained from Tauc analysis of the reflectance spectra and photoluminescence. The band gap was evaluated for both films: for InNO the value was 2.48 eV and for InN, 1.52 eV. The relative quantities obtained from RBS spectra analysis in InNO sample are 48% O, 12% N, 40% In and in InN sample are 8% O, 65% N, 27% In.
Design for maximum band-gaps in beam structures
DEFF Research Database (Denmark)
Olhoff, Niels; Niu, Bin; Cheng, Gengdong
2012-01-01
This paper aims to extend earlier optimum design results for transversely vibrating Bernoulli-Euler beams by determining new optimum band-gap beam structures for (i) different combinations of classical boundary conditions, (ii) much larger values of the orders n and n-1 of adjacent upper and lower...
Experimental studies of surface plasmon polariton band gap effect
DEFF Research Database (Denmark)
Volkov, V. S.; Bozhevolnyi, S. I.; Leosson, K.;
2003-01-01
the dependence of the SPP band gap (SPPBG) effect manifested via the SPP reflection and guiding (along line defects) on the parameters of the surface structures (period, filling factor and lattice orientation). We find that the SPPBG effect is stronger along &ggr;K direction for all investigated periodic...
Analysis of photonic band-gap structures in stratified medium
DEFF Research Database (Denmark)
Tong, Ming-Sze; Yinchao, Chen; Lu, Yilong;
2005-01-01
Purpose - To demonstrate the flexibility and advantages of a non-uniform pseudo-spectral time domain (nu-PSTD) method through studies of the wave propagation characteristics on photonic band-gap (PBG) structures in stratified medium Design/methodology/approach - A nu-PSTD method is proposed...
Strain sensitivity of band gaps of Sn-containing semiconductors
DEFF Research Database (Denmark)
Li, Hong; Castelli, Ivano Eligio; Thygesen, Kristian Sommer
2015-01-01
Tuning of band gaps of semiconductors is a way to optimize materials for applications within photovoltaics or as photocatalysts. One way to achieve this is through applying strain to the materials. We investigate the effect of strain on a range of Sn-containing semiconductors using density...
Low Loss Plastic Terahertz Photonic Band-Gap Fibres
Institute of Scientific and Technical Information of China (English)
GENG You-Fu; TAN Xiao-Ling; ZHONG Kai; WANG Peng; YAO Jian-Quan
2008-01-01
We report a numerical investigation on terahertz wave propagation in plastic photonic band-gap fibres which are characterized by a 19-unit-cell air core and hexagonal air holes with rounded corners in cladding. Using the finite element method, the leakage loss and absorption loss are calculated and the transmission properties are analysed.The lowest loss of 0.268 dB/m is obtained. Numerical results show that the fibres could liberate the constraints of background materials beyond the transparency region in terahertz wave band, and efficiently minimize the effect of absorption by background materials, which present great advantage of plastic photonic band-gap fibres in long distance terahertz delivery.
Coupled-mode theory for photonic band-gap inhibition of spatial instabilities.
Gomila, Damià; Oppo, Gian-Luca
2005-07-01
We study the inhibition of pattern formation in nonlinear optical systems using intracavity photonic crystals. We consider mean-field models for singly and doubly degenerate optical parametric oscillators. Analytical expressions for the new (higher) modulational thresholds and the size of the "band gap" as a function of the system and photonic crystal parameters are obtained via a coupled-mode theory. Then, by means of a nonlinear analysis, we derive amplitude equations for the unstable modes and find the stationary solutions above threshold. The form of the unstable mode is different in the lower and upper parts of the band gap. In each part there is bistability between two spatially shifted patterns. In large systems stable wall defects between the two solutions are formed and we provide analytical expressions for their shape. The analytical results are favorably compared with results obtained from the full system equations. Inhibition of pattern formation can be used to spatially control signal generation in the transverse plane.
Substrate-induced band gap opening in epitaxial graphene
Energy Technology Data Exchange (ETDEWEB)
Zhou, S.Y.; Gweon, G.-H.; Fedorov, A.V.; First, P.N.; de Heer,W.A.; Lee, D.-H.; Guinea, F.; Castro Neto, A.H.; Lanzara, A.
2007-09-08
Graphene has shown great application potential as the hostmaterial for next-generation electronic devices. However, despite itsintriguing properties, one of the biggest hurdles for graphene to beuseful as an electronic material is the lack of an energy gap in itselectronic spectra. This, for example, prevents the use of graphene inmaking transistors. Although several proposals have been made to open agap in graphene's electronic spectra, they all require complexengineering of the graphene layer. Here, we show that when graphene isepitaxially grown on SiC substrate, a gap of ~;0.26 eV is produced. Thisgap decreases as the sample thickness increases and eventually approacheszero when the number of layers exceeds four. We propose that the originof this gap is the breaking of sublattice symmetry owing to thegraphene-substrate interaction. We believe that our results highlight apromising direction for band gap engineering of graphene.
Designer disordered complex media : hyperuniform photonic and phononic band gap materials.
Amoah, T. K.
2016-01-01
In this thesis we investigate designer disordered complex media for photonics and phononics applications. Initially we focus on the photonic properties and we analyse hyperuniform disordered structures (HUDS) using numerical simulations. Photonic HUDS are a new class of photonic solids, which display large, isotropic photonic band gaps (PBG) comparable in size to the ones found in photonic crystals (PC). We review their complex interference properties, including the origin of PBGs and potent...
The calculation of band gap energy in zinc oxide films
Arif, Ali; Belahssen, Okba; Gareh, Salim; Benramache, Said
2015-01-01
We investigated the optical properties of undoped zinc oxide thin films as the n-type semiconductor; the thin films were deposited at different precursor molarities by ultrasonic spray and spray pyrolysis techniques. The thin films were deposited at different substrate temperatures ranging between 200 and 500 °C. In this paper, we present a new approach to control the optical gap energy of ZnO thin films by concentration of the ZnO solution and substrate temperatures from experimental data, which were published in international journals. The model proposed to calculate the band gap energy with the Urbach energy was investigated. The relation between the experimental data and theoretical calculation suggests that the band gap energies are predominantly estimated by the Urbach energies, film transparency, and concentration of the ZnO solution and substrate temperatures. The measurements by these proposal models are in qualitative agreements with the experimental data; the correlation coefficient values were varied in the range 0.96-0.99999, indicating high quality representation of data based on Equation (2), so that the relative errors of all calculation are smaller than 4%. Thus, one can suppose that the undoped ZnO thin films are chemically purer and have many fewer defects and less disorder owing to an almost complete chemical decomposition and contained higher optical band gap energy.
Anomalous Temperature Dependence of the Band Gap in Black Phosphorus.
Villegas, Cesar E P; Rocha, A R; Marini, Andrea
2016-08-10
Black phosphorus (BP) has gained renewed attention due to its singular anisotropic electronic and optical properties that might be exploited for a wide range of technological applications. In this respect, the thermal properties are particularly important both to predict its room temperature operation and to determine its thermoelectric potential. From this point of view, one of the most spectacular and poorly understood phenomena is indeed the BP temperature-induced band gap opening; when temperature is increased, the fundamental band gap increases instead of decreases. This anomalous thermal dependence has also been observed recently in its monolayer counterpart. In this work, based on ab initio calculations, we present an explanation for this long known and yet not fully explained effect. We show that it arises from a combination of harmonic and lattice thermal expansion contributions, which are in fact highly interwined. We clearly narrow down the mechanisms that cause this gap opening by identifying the peculiar atomic vibrations that drive the anomaly. The final picture we give explains both the BP anomalous band gap opening and the frequency increase with increasing volume (tension effect).
Acoustic band gaps in two-dimensional square arrays of semi-hollow circular cylinders
Institute of Scientific and Technical Information of China (English)
LU TianJian; GAO GuoQin; MA ShouLin; JIN Feng; T.Kim
2009-01-01
Concave surfaces focus sound while convex surfaces disperse sound. It is therefore interesting to know if it is possible to make use of these two opposite characteristics to enhance the band gap per-formance of periodic arrays of solid cylinders in air. In this paper, the band gap characteristics of a 2-D square array of semi-hollow circular cylinders embedded in air are investigated, both experimentally and theoretically. In comparison with the types of inclusion studied by previous researchers, a semi-hollow circular cylinder is unique in the sense that it has concave inner surfaces and convex outer surfaces. The finite difference time domain (FDTD) method is employed to study the propagation behavior of sound across the new phononic crystal of finite extent, and the influences of sample size and inclusion orientation on band gap characteristics are quantified in order to obtain the maximum band gap. For reference, the band gap behaviors of solid circular cylinder/air and hollow circular cyl-inder/air systems are considered and compared with those of semi-hollow circular cylinder/air systems. In addition to semi-hollow circular cylinders, other inclusion topologies such as semi-hollow triangular and square cylinders are also investigated. To validate the theoretical predictions, experimental meas-urements on square arrays of hollow AI cylinders in air and semi-hollow AI cylinders in air are carried out. The results demonstrate that the semi-hollow circular cylinder/air system has the best overall band gap performance.
Photovoltaic properties of low band gap ferroelectric perovskite oxides
Huang, Xin; Paudel, Tula; Dong, Shuai; Tsymbal, Evgeny
2015-03-01
Low band gap ferroelectric perovskite oxides are promising for photovoltaic applications due to their high absorption in the visible optical spectrum and a possibility of having large open circuit voltage. Additionally, an intrinsic electric field present in these materials provides a bias for electron-hole separation without requiring p-n junctions as in conventional solar cells. High quality thin films of these compounds can be grown with atomic layer precision allowing control over surface and defect properties. Initial screening based on the electronic band gap and the energy dependent absorption coefficient calculated within density functional theory shows that hexagonal rare-earth manganites and ferrites are promising as photovoltaic absorbers. As a model, we consider hexagonal TbMnO3. This compound has almost ideal band gap of about 1.4 eV, very high ferroelectric Curie temperature, and can be grown epitaxially. Additionally hexagonal TbMnO3 offers possibility of coherent structure with transparent conductor ZnO. We find that the absorption is sufficiently high and dominated by interband transitions between the Mn d-bands. We will present the theoretically calculated photovoltaic efficiency of hexagonal TbMnO3 and explore other ferroelectric perovskite oxides.
Photonic band-gap formation by optical-phase-mask lithography.
Chan, Timothy Y M; Toader, Ovidiu; John, Sajeev
2006-04-01
We demonstrate an approach for fabricating photonic crystals with large three-dimensional photonic band gaps (PBG's) using single-exposure, single-beam, optical interference lithography based on diffraction of light through an optical phase mask. The optical phase mask (OPM) consists of two orthogonally oriented binary gratings joined by a thin, solid layer of homogeneous material. Illuminating the phase mask with a normally incident beam produces a five-beam diffraction pattern which can be used to expose a suitable photoresist and produce a photonic crystal template. Optical-phase-mask Lithography (OPML) is a major simplification from the previously considered multibeam holographic lithography of photonic crystals. The diffracted five-beam intensity pattern exhibits isointensity surfaces corresponding to a diamondlike (face-centered-cubic) structure, with high intensity contrast. When the isointensity surfaces in the interference patterns define a silicon-air boundary in the resulting photonic crystal, with dielectric contrast 11.9 to 1, the optimized PBG is approximately 24% of the gap center frequency. The ideal index contrast for the OPM is in the range of 1.7-2.3. Below this range, the intensity contrast of the diffraction pattern becomes too weak. Above this range, the diffraction pattern may become too sensitive to structural imperfections of the OPM. When combined with recently demonstrated polymer-to-silicon replication methods, OPML provides a highly efficient approach, of unprecedented simplicity, for the mass production of large-scale three-dimensional photonic band-gap materials.
Giant Enhancement of Second Harmonic Generation at Photonic Band Gap Edges
Institute of Scientific and Technical Information of China (English)
MA Dong-Li; REN Ming-Liang; DOU Jun-Hong; LI Zhi-Yuan
2010-01-01
@@ Second harmonic generation(SHG)in one-dimensional nonlinear photonic crystals made from periodically alternating ferroelectric and dielectric layers is investigated by means of the transfer matrix method.When tunedat the photonic band gap(PBG)edges,the fundamental wave and second harmonic wave slow down,and the filed enhancement takes place within the nonlinear photonic crystal.The phase mismatching can be compensated for to some extent and the second harmonic process will be enhanced.Numerical results show that the enhancement of SHG in the PBG structure can be up to four orders of magnitude compared with the traditional quasi-phase-matching structure.
Band gap determination of Ni–Zn ferrites
Indian Academy of Sciences (India)
G P Joshi; N S Saxena; R Mangal; A Mishra; T P Sharma
2003-06-01
Nanocomposites of Ni–Zn with copolymer matrix of aniline and formaldehyde in presence of varying concentrations of zinc ions have been studied at room temperature and normal pressure. The energy band gap of these materials are determined by reflection spectra in the wavelength range 400–850 nm by spectrophotometer at room temperature. From the analysis of reflection spectra, nanocomposites of copolymer of aniline and formaldehyde with Ni$_{1–x}$Zn$_x$Fe2O4 ( = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) have been found to have direct band gaps ranging from 1.50–1.66 eV.
On acoustic band gaps in homogenized piezoelectric phononic materials
Directory of Open Access Journals (Sweden)
Rohan E.
2010-07-01
Full Text Available We consider a composite medium made of weakly piezoelectric inclusions periodically distributed in the matrix which ismade of a different piezoelectricmaterial. Themediumis subject to a periodic excitation with an incidence wave frequency independent of scale ε of the microscopic heterogeneities. Two-scale method of homogenization is applied to obtain the limit homogenized model which describes acoustic wave propagation in the piezoelectric medium when ε → 0. In analogy with the purely elastic composite, the resulting model allows existence of the acoustic band gaps. These are identified for certain frequency ranges whenever the so-called homogenized mass becomes negative. The homogenized model can be used for band gap prediction and for dispersion analysis for low wave numbers. Modeling such composite materials seems to be perspective in the context of Smart Materials design.
Microscopic theory of photonic band gaps in optical lattices
Samoylova, M; Bachelard, R; Courteille, Ph W
2013-01-01
We propose a microscopic model to describe the scattering of light by atoms in optical lattices. The model is shown to efficiently capture Bragg scattering, spontaneous emission and photonic band gaps. A connection to the transfer matrix formalism is established in the limit of a one-dimensional optical lattice, and we find the two theories to yield results in good agreement. The advantage of the microscopic model is, however, that it suits better for studies of finite-size and disorder effects.
One-dimensional photonic band gaps in optical lattices
Samoylova, Marina; Holynski, Michael; Courteille, Philippe Wilhelm; Bachelard, Romain
2013-01-01
The phenomenon of photonic band gaps in one-dimensional optical lattices is reviewed using a microscopic approach. Formally equivalent to the transfer matrix approach in the thermodynamic limit, a microscopic model is required to study finite-size effects, such as deviations from the Bragg condition. Microscopic models describing both scalar and vectorial light are proposed, as well as for two- and three-level atoms. Several analytical results are compared to experimental data, showing a good agreement.
Zhang, Shengli; Yan, Zhong; Li, Yafei; Chen, Zhongfang; Zeng, Haibo
2015-03-01
The typical two-dimensional (2D) semiconductors MoS2, MoSe2, WS2, WSe2 and black phosphorus have garnered tremendous interest for their unique electronic, optical, and chemical properties. However, all 2D semiconductors reported thus far feature band gaps that are smaller than 2.0 eV, which has greatly restricted their applications, especially in optoelectronic devices with photoresponse in the blue and UV range. Novel 2D mono-elemental semiconductors, namely monolayered arsenene and antimonene, with wide band gaps and high stability were now developed based on first-principles calculations. Interestingly, although As and Sb are typically semimetals in the bulk, they are transformed into indirect semiconductors with band gaps of 2.49 and 2.28 eV when thinned to one atomic layer. Significantly, under small biaxial strain, these materials were transformed from indirect into direct band-gap semiconductors. Such dramatic changes in the electronic structure could pave the way for transistors with high on/off ratios, optoelectronic devices working under blue or UV light, and mechanical sensors based on new 2D crystals.
Perovskite-perovskite tandem photovoltaics with optimized band gaps
Eperon, Giles E.; Leijtens, Tomas; Bush, Kevin A.; Prasanna, Rohit; Green, Thomas; Wang, Jacob Tse-Wei; McMeekin, David P.; Volonakis, George; Milot, Rebecca L.; May, Richard; Palmstrom, Axel; Slotcavage, Daniel J.; Belisle, Rebecca A.; Patel, Jay B.; Parrott, Elizabeth S.; Sutton, Rebecca J.; Ma, Wen; Moghadam, Farhad; Conings, Bert; Babayigit, Aslihan; Boyen, Hans-Gerd; Bent, Stacey; Giustino, Feliciano; Herz, Laura M.; Johnston, Michael B.; McGehee, Michael D.; Snaith, Henry J.
2016-11-01
We demonstrate four- and two-terminal perovskite-perovskite tandem solar cells with ideally matched band gaps. We develop an infrared-absorbing 1.2-electron volt band-gap perovskite, FA0.75Cs0.25Sn0.5Pb0.5I3, that can deliver 14.8% efficiency. By combining this material with a wider-band gap FA0.83Cs0.17Pb(I0.5Br0.5)3 material, we achieve monolithic two-terminal tandem efficiencies of 17.0% with >1.65-volt open-circuit voltage. We also make mechanically stacked four-terminal tandem cells and obtain 20.3% efficiency. Notably, we find that our infrared-absorbing perovskite cells exhibit excellent thermal and atmospheric stability, not previously achieved for Sn-based perovskites. This device architecture and materials set will enable “all-perovskite” thin-film solar cells to reach the highest efficiencies in the long term at the lowest costs.
Two novel silicon phases with direct band gaps.
Fan, Qingyang; Chai, Changchun; Wei, Qun; Yang, Yintang
2016-05-14
Due to its abundance, silicon is the preferred solar-cell material despite the fact that many silicon allotropes have indirect band gaps. Elemental silicon has a large impact on the economy of the modern world and is of fundamental importance in the technological field, particularly in the solar cell industry. Looking for direct band gap silicon is still an important field in material science. Based on density function theory with the ultrasoft pseudopotential scheme in the frame of the local density approximation and the generalized gradient approximation, we have systematically studied the structural stability, absorption spectra, electronic, optical and mechanical properties and minimum thermal conductivity of two novel silicon phases, Cm-32 silicon and P21/m silicon. These are both thermally, dynamically and mechanically stable. The absorption spectra of Cm-32 silicon and P21/m silicon exhibit significant overlap with the solar spectrum and thus, excellent photovoltaic efficiency with great improvements over Fd3[combining macron]m Si. These two novel Si structures with direct band gaps could be applied in single p-n junction thin-film solar cells or tandem photovoltaic devices.
Band gap engineering of indium zinc oxide by nitrogen incorporation
Energy Technology Data Exchange (ETDEWEB)
Ortega, J.J., E-mail: jjosila@hotmail.com [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad esq. Paseo la Bufa, Fracc. Progreso, C.P. 98060 Zacatecas (Mexico); Doctorado Institucional de Ingeniería y Ciencia de Materiales, Universidad Autónoma de San Luis Potosí, Av. Salvador Nava, Zona Universitaria, C.P. 78270 San Luis Potosí (Mexico); Aguilar-Frutis, M.A.; Alarcón, G. [Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada del Instituto Politécnico Nacional, Unidad Legaría, Calz. Legaría No. 694, Col. Irrigación, C.P. 11500 México D.F. (Mexico); Falcony, C. [Departamento de Física, Centro de Investigación y Estudios Avanzados del Instituto Politécnico Nacional campus Zacatenco, Av. Instituto Politécnico Nacional 2508, Col. San Pedro Zacatenco, C.P. 07360 México D.F. (Mexico); and others
2014-09-15
Highlights: • IZON thin films were deposited by RF reactive sputtering at room temperature. • The effects of nitrogen on physical properties of IZO were analyzed. • Optical properties of IZON were studied by SE and UV–vis spectroscopy. • Adachi and classical parameters were quantitative and qualitatively congruent. • Nitrogen induces a gradual narrowing band gap from 3.5 to 2.5 eV on IZON films. - Abstract: The effects of nitrogen incorporation in indium zinc oxide films, as grown by RF reactive magnetron sputtering, on the structural, electrical and optical properties were studied. It was determined that the variation of the N{sub 2}/Ar ratio, in the reactive gas flux, was directly proportional to the nitrogen percentage measured in the sample, and the incorporated nitrogen, which substituted oxygen in the films induces changes in the band gap of the films. This phenomenon was observed by measurement of absorption and transmission spectroscopy in conjunction with spectral ellipsometry. To fit the ellipsometry spectra, the classical and Adachi dispersion models were used. The obtained optical parameters presented notable changes related to the increment of the nitrogen in the film. The band gap narrowed from 3.5 to 2.5 eV as the N{sub 2}/Ar ratio was increased. The lowest resistivity obtained for these films was 3.8 × 10{sup −4} Ω cm with a carrier concentration of 5.1 × 10{sup 20} cm{sup −3}.
Origin of multiple band gap values in single width nanoribbons
Goyal, Deepika; Kumar, Shailesh; Shukla, Alok; Kumar, Rakesh
2016-11-01
Deterministic band gap in quasi-one-dimensional nanoribbons is prerequisite for their integrated functionalities in high performance molecular-electronics based devices. However, multiple band gaps commonly observed in graphene nanoribbons of the same width, fabricated in same slot of experiments, remain unresolved, and raise a critical concern over scalable production of pristine and/or hetero-structure nanoribbons with deterministic properties and functionalities for plethora of applications. Here, we show that a modification in the depth of potential wells in the periodic direction of a supercell on relative shifting of passivating atoms at the edges is the origin of multiple band gap values in nanoribbons of the same width in a crystallographic orientation, although they carry practically the same ground state energy. The results are similar when calculations are extended from planar graphene to buckled silicene nanoribbons. Thus, the findings facilitate tuning of the electronic properties of quasi-one-dimensional materials such as bio-molecular chains, organic and inorganic nanoribbons by performing edge engineering.
Band gap transmission in periodic bistable mechanical systems
Frazier, Michael J.; Kochmann, Dennis M.
2017-02-01
We theoretically and numerically investigate the supratransmission phenomenon in discrete, nonlinear systems containing bistable elements. While linear waves cannot propagate within the band gaps of periodic structures, supratransmission allows large-amplitude waves to transmit energy through the band gap. For systems lacking bistability, the threshold amplitude for such energy transmission at a given frequency in the linear band gap is fixed. We show that the topological transitions due to bistability provide an avenue for switching the threshold amplitude between two well-separated values. Moreover, this versatility is achieved while leaving the linear dispersion properties of the system essentially unchanged. Interestingly, the behavior changes when an elastic chain is coupled to bistable resonators (in an extension of the well-studied linear locally resonant metamaterials). Here, we show that a fraction of the injected energy is confined near the boundary due to the resonators, providing a means of regulating the otherwise unrestrained energy flow due to supratransmission. Together, the results illustrate new means of controlling nonlinear wave propagation and energy transport in systems having multi-stable elements.
Characterization of all-glass photonic band gap fiber
Buczynski, Ryszard; Kujawa, Ireneusz; Lusawa, Marzenna; Pysz, Dariusz; Martynkien, Tadeusz; Berghmans, Francis; Nasilowski, Tomasz; Thienpont, Hugo; Stepien, Ryszard
2008-12-01
In this paper we report on the fabrication and characterization of a double glass micro-structured fiber with low index core and photonic cladding made of high index micro-rods. Micro rods are made of lead-oxide F2 commercially available glass (SCHOTT Inc.) with a refractive index nD=1.619, while as background we use a borosilicate NC21 glass with a refractive index nD=1.533. The fiber cladding is composed of 8 rings of F2 glass micro rods ordered in hexagonal lattice. A core is created by replacement of seven F2 rods with NC21 rods. A fabricated fiber has a linear filling factor of 0.75 and micro rods diameter of 1.2 μm. A core has a diameter of 3.7 μm while cladding and total fiber diameter are 42,6μm and 120 μm, respectively. Using supercontinuum source we have measured transmission properties of the fabricated fiber. Based on measurements of the fiber samples of 18-80 cm long we have identified two photonic band gaps. Fist band gap is localized in visible range at 610 nm central wavelength. The second broadband photonic band gap is localized in near infrared and it is 80 nm wide at 840 nm central wavelength.
Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State.
Lim, A; Foulkes, W M C; Horsfield, A P; Mason, D R; Schleife, A; Draeger, E W; Correa, A A
2016-01-29
We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. An analysis of the time dependence of the transition rates using coupled linear rate equations enables one of the excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap.
Hydrogen production by tuning the photonic band gap with the electronic band gap of TiO₂.
Waterhouse, G I N; Wahab, A K; Al-Oufi, M; Jovic, V; Anjum, D H; Sun-Waterhouse, D; Llorca, J; Idriss, H
2013-10-10
Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability.
Institute of Scientific and Technical Information of China (English)
DING Chun-Ling; LI Jia-Hua; YANG Xiao-Xue
2011-01-01
The probe absorption-dispersion spectra of a radio-frequency (RF)-driven five-level atom embedded in a photonic crystal are investigated by considering the isotropic double-band photonic-band-gap (PBG) reservoir. In the model used, the two transitions are, respectively, coupled by the upper and lower bands in such a PBG material, thus leading to some curious phenomena. Numerical simulations are performed for the optical spectra. It is found that when one transition frequency is inside the band gap and the other is outside the gap, there emerge three peaks in the absorption spectra. However, for the case that two transition frequencies lie inside or outside the band gap, the spectra display four absorption profiles. Especially, there appear two sharp peaks in the spectra when both transition frequencies exist inside the band gap. The influences of the intensity and frequency of the RF-driven field on the absorptive and dispersive response are analyzed under different band-edge positions. It is found that a transparency window appears in the absorption spectra and is accompanied by a very steep variation of the dispersion profile by adjusting system parameters. These results show that the absorption-dispersion properties of the system depend strongly on the RFinduced quantum interference and the density of states (DOS) of the PBG reservoir.
Effect of hydrogenation on the band gap of graphene nano-flakes
Energy Technology Data Exchange (ETDEWEB)
Tachikawa, Hiroto, E-mail: hiroto@eng.hokudai.ac.jp; Iyama, Tetsuji; Kawabata, Hiroshi
2014-03-03
The effects of hydrogenation on the band gap of graphene have been investigated by means of density functional theory method. It is generally considered that the band gap increases with increasing coverage of hydrogen atom on the graphene. However, the present study shows that the band gap decreases first with increasing hydrogen coverage and reaches the lowest value at finite coverage (γ = 0.3). Next, the band gap increases to that of insulator with coverage from 0.3 to 1.0. This specific feature of the band gap is reasonably explained by broken symmetry model and the decrease of pi-conjugation. The electronic states of hydrogenated graphene are discussed. - Highlights: • Density functional theory calculations were carried out for hydrogen on graphene • Effects of hydrogenation on the band gap of graphene were examined. • The band gap showed a minimum at a finite coverage. • Mechanism of specific band gap feature was discussed.
Controllable Photonic Band Gap and Defect Mode in a 1D CO2-Laser Optical Lattice
Institute of Scientific and Technical Information of China (English)
ZHOU Qi; YIN Jian-Ping
2008-01-01
We Dropose a new method to form a novel controllable photonic crystal with cold atoms and study the photonic band gap(PBG)of an infinite 1D CO2-laser optical lattice of 85Rb atoms under the condition of quantum coherence.A significant gap generated near the resonant frequency of the atom is founded and its dependence on physical parameters is also discussed.Using the eigenquation of defect mode,we calculate the defect mode when a defect is introduced into such a lattice.Our study shows that the proposed new method can be used to optically probe optical lattice in situ and to design some novel and controllable photonic crystals.
Group IV direct band gap photonics: Methods, Challenges and Opportunities
Directory of Open Access Journals (Sweden)
Richard eGeiger
2015-07-01
Full Text Available The concept of direct band gap group IV materials offers a paradigm change for Si-photonics concerning the monolithic implementation of light emitters: The idea is to integrate fully compatible group IV materials with equally favorable optical properties as the chemically incompatible group III-V-based systems. The concept involves either mechanically applied strain on Ge or alloying of Ge with Sn and permits to drastically improve the insufficient radiative efficiency of Ge. The favorable optical properties result from a modified band structure transformed from an indirect to a direct one. The first demonstration of such a direct band gap laser, accomplished in GeSn, exemplifies the capability of this new concept. These systems may permit a qualitative as well as a quantitative expansion of Si-photonics into traditional but also new areas of applications, provided they can be operated energy efficiently, under ambient conditions and integrated with current Si technologies. This review aims to discuss the challenges along this path in terms of fabrication, characterization and fundamental understanding, and will elaborate on evoking opportunities of this new class of group IV-based laser materials.
Group IV direct band gap photonics: Methods, Challenges and Opportunities
Geiger, Richard; Zabel, Thomas; Sigg, Hans
2015-07-01
The concept of direct band gap group IV materials offers a paradigm change for Si-photonics concerning the monolithic implementation of light emitters: The idea is to integrate fully compatible group IV materials with equally favorable optical properties as the chemically incompatible group III-V-based systems. The concept involves either mechanically applied strain on Ge or alloying of Ge with Sn and permits to drastically improve the insufficient radiative efficiency of Ge. The favorable optical properties result from a modified band structure transformed from an indirect to a direct one. The first demonstration of such a direct band gap laser, accomplished in GeSn, exemplifies the capability of this new concept. These systems may permit a qualitative as well as a quantitative expansion of Si-photonics into traditional but also new areas of applications, provided they can be operated energy efficiently, under ambient conditions and integrated with current Si technologies. This review aims to discuss the challenges along this path in terms of fabrication, characterization and fundamental understanding, and will elaborate on evoking opportunities of this new class of group IV-based laser materials.
Institute of Scientific and Technical Information of China (English)
郝东山
2013-01-01
为了研究Compton散射对1维3元未磁化等离子体光子晶体中TE波禁带影响，采用Compton散射模型和传输矩阵法，进行了理论分析和实验验证，取得了一些重要数据。结果表明，随着等离子体频率增大，左旋和右旋极化波禁带展宽比散射前减小0.09GHz，禁带主频率向高频区域移动增大0.48GHz。随着等离子体碰撞频率增大，两种极化波禁带宽度发生一定变化。随着等离子体回旋频率、填充率、光入射角和介质相对介电常数增大，左旋和右旋极化波禁带明显调谐效应。这一结果对等离子体光子晶体应用是有帮助的。%In order to study the effect of Compton scattering on TE wave prohibited band gaps of 1-D ternary un-magnetized plasma photonic crystals ,based on the model of Compton scattering and transfer matrix method ,some important data was obtained after the theoretical analysis and experimental verification .The broadening width of prohibited band gap of the left circle polarization wave and the right circle polarization wave were decreased 0.09GHz along with the increasing of plasma frequency after Compton scattering .The movement from the central frequency area of prohibited band gap to the high frequency area was increased 0.48GHz.The change of prohibited band gaps widths of the left circle polarization wave and the right circle polarization wave happened along with the increasing of plasma collision frequency .The significant tuning effect of prohibited band gaps of the left circle polarization wave and the right circle polarization wave was induced by Compton scattering along with the increasing of plasma circle frequency ,filling index,light incident angle and relative dielectric constant.The result is helpful for the application of the plasma photonic crystals .
Dolgonos, Alex; Mason, Thomas O.; Poeppelmeier, Kenneth R.
2016-08-01
The direct optical band gap of semiconductors is traditionally measured by extrapolating the linear region of the square of the absorption curve to the x-axis, and a variation of this method, developed by Tauc, has also been widely used. The application of the Tauc method to crystalline materials is rooted in misconception-and traditional linear extrapolation methods are inappropriate for use on degenerate semiconductors, where the occupation of conduction band energy states cannot be ignored. A new method is proposed for extracting a direct optical band gap from absorption spectra of degenerately-doped bulk semiconductors. This method was applied to pseudo-absorption spectra of Sn-doped In2O3 (ITO)-converted from diffuse-reflectance measurements on bulk specimens. The results of this analysis were corroborated by room-temperature photoluminescence excitation measurements, which yielded values of optical band gap and Burstein-Moss shift that are consistent with previous studies on In2O3 single crystals and thin films.
CZTS stoichiometry effects on the band gap energy
Energy Technology Data Exchange (ETDEWEB)
Malerba, Claudia, E-mail: claudia.malerba-1@ing.unitn.it [University of Trento, Department of Civil, Environmental and Mechanical Engineering, via Mesiano 77, 38123 Trento (Italy); ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Biccari, Francesco [ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Azanza Ricardo, Cristy Leonor [University of Trento, Department of Civil, Environmental and Mechanical Engineering, via Mesiano 77, 38123 Trento (Italy); Valentini, Matteo [Sapienza – University of Rome, Department of Physics, p.le A. Moro 5, 00185 Roma (Italy); ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Chierchia, Rosa [ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Müller, Melanie [University of Trento, Department of Civil, Environmental and Mechanical Engineering, via Mesiano 77, 38123 Trento (Italy); Max Planck Institute for Solid State Research, Heisenberg str. 1, 70569 Stuttgart (Germany); Santoni, Antonino [ENEA, Frascati Research Center, via E. Fermi 45, 00044 Frascati (Italy); Esposito, Emilia [ENEA, Portici Research Center, Piazzale E. Fermi, 80055 Portici (Napoli) (Italy); Mangiapane, Pietro [ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Scardi, Paolo [University of Trento, Department of Civil, Environmental and Mechanical Engineering, via Mesiano 77, 38123 Trento (Italy); Mittiga, Alberto [ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy)
2014-01-05
Highlights: • CZTS films with different compositions were grown from stacked-layer precursors. • The band-gap energy varies from 1.48 to 1.63 eV as the [Sn]/[Cu] ratio increases. • The Zn content seems not to be a critical parameter for the optical properties. • PDS data show an increase of the sub-gap absorption as the Sn content is reduced. • Formation of defects at low Sn content was proposed to explain the Eg variation. -- Abstract: The considerable spread of Cu{sub 2}ZnSnS{sub 4} (CZTS) optical properties reported in the literature is discussed in terms of material stoichiometry. To this purpose, kesterite thin films were prepared by sulfurization of multilayered precursors of ZnS, Cu and Sn, changing the relative amounts to obtain CZTS layers with different compositions. X-Ray Diffraction (XRD), Energy Dispersive X-Ray (EDX) spectroscopy, X-Ray Photoelectron Spectroscopy (XPS) and Raman spectroscopy were used for structural and compositional analysis. XRD quantitative phase analysis provides the amount of spurious phases and information on Sn-site occupancy. The optical properties were investigated by spectrophotometric and Photothermal Deflection Spectroscopy (PDS) measurements to assess the absorption coefficient of samples with different compositions. The PDS data show an increase of the sub-band absorption as the Sn content decreases. The results are interpreted assuming the formation of additional defects as the tin content is reduced. Those defects can also be responsible for the decrease of the band gap energy value as the Sn/Cu ratio is decreased.
The band gap and band offset in ultrathin oxide-semiconductor heterostructures
Schmeißer, D.; Henkel, K.; Bergholz, M.; Tallarida, M.
2010-03-01
In ultrathin high- k oxide layers knowledge of the band line up and band gap is essential for modeling the transport properties and to learn about a device's long term stability and reliability. However, such data are hard to determine in such ultrathin layers and usually are extrapolated from values for bulk samples or are taken from the literature. In our in situ approach we use electron energy loss spectroscopy, valence band photoelectron spectroscopy, X-ray absorption spectroscopy, and resonant inelastic X-ray scattering to obtain the loss function and the valence and conduction band densities of states. From such data we derive the values of the band offsets and of the band gap. We discuss the ability of this combination of different techniques for the analysis of such complex ultrathin dielectric systems and discuss in detail the properties of the native oxide in SiO 2/Si(001) and SiO 2/3C-SiC(001).
Theoretical optimization of complete forbidden bands in woodpile-type photonic crystals
Institute of Scientific and Technical Information of China (English)
ZHAN Yi; ZHENG Yi; LI Xiu-Xia
2008-01-01
Based on the plane-wave method, the optical properties of complete forbidden bands of woodpile structure photonic crystal with an entire lattice rotation of 45°in the x-y plane were theoretically studied in terms ofheight-to-pitch ratios, filling factors, and rotation angles. The calculated results show that the gap to mid-gap ratio changes slightly with a filling fraction ranging from 0.25 to 0.30. The optimum height-to-pitch ratio is about 1.3. The gap to mid-gap ratio reaches more than 0.18 when the rotation angle increases from 40°to 50°and the maximum gap to mid-gap ratio of 0.2 remains unchanged for the rotation angle from 42°to 48°with a constant height-to-pitch ratio of 1.3. The gap to mid-gap ratio reaches the maximum value of 0.2 when the height-to-pitch ratio is 1.3. This woodpile-type photonic crystal can provide large band gaps within a wider parameter range, which makes it convenient to manufacture three-dimensional photonic crystals in the laboratory.
Band gap tuning of nickelates for photovoltaic applications
Chang, Lei; Wang, Le; You, Lu; Zhou, Yang; Fang, Liang; Wang, Shiwei; Wang, Junling
2016-11-01
Hybrid perovskites have achieved tremendous success as a light absorber in solar cells during the past few years. However, the stability issue casts shadow on their practical applications. Perovskite oxides may offer an alternative. In this study, the metal-insulator transition in perovskite neodymium nickelates (NdNiO3) is systematically tuned by adjusting the oxygen partial pressure during film growth. Room temperature insulating films with different band gaps are obtained. Testing photovoltaic cells have been prepared by combining the nickelates with Nb-doped SrTiO3, and photovoltaic performance has been optimized. Our study offers a new route for designing novel photovoltaic materials.
Widely tunable band gaps of graphdiyne: an ab initio study.
Koo, Jahyun; Park, Minwoo; Hwang, Seunghyun; Huang, Bing; Jang, Byungryul; Kwon, Yongkyung; Lee, Hoonkyung
2014-05-21
Functionalization of graphdiyne, a two-dimensional atomic layer of sp-sp(2) hybrid carbon networks, was investigated through first-principles calculations. Hydrogen or halogen atoms preferentially adsorb on sp-bonded carbon atoms rather than on sp(2)-bonded carbon atoms, forming sp(2)- or sp(3)-hybridization. The energy band gap of graphdiyne is increased from ~0.5 eV to ~5.2 eV through the hydrogenation or halogenation. Unlike graphene, segregation of adsorbing atoms is energetically unfavourable. Our results show that hydrogenation or halogenation can be utilized for modifying the electronic properties of graphdiyne for applications to nano-electronics and -photonics.
Photonic band gap spectra in Octonacci metamaterial quasicrystals
Brandão, E. R.; Vasconcelos, M. S.; Albuquerque, E. L.; Fulco, U. L.
2017-02-01
In this work we study theoretically the photonic band gap spectra for a one-dimensional quasicrystal made up of SiO2 (layer A) and a metamaterial (layer B) organized following the Octonacci sequence, where its nth-stage Sn is given by the inflation rule Sn =Sn - 1Sn - 2Sn - 1 for n ≥ 3 , with initial conditions S1 = A and S2 = B . The metamaterial is characterized by a frequency dependent electric permittivity ε(ω) and magnetic permeability μ(ω) . The polariton dispersion relation is obtained analytically by employing a theoretical calculation based on a transfer-matrix approach. A quantitative analysis of the spectra is then discussed, stressing the distribution of the allowed photonic band widths for high generations of the Octonacci structure, which depict a self-similar scaling property behavior, with a power law depending on the common in-plane wavevector kx .
Vibration band gaps of a kind of angle type beam of phononic crystals%一类声子晶体角梁的振动带隙研究
Institute of Scientific and Technical Information of China (English)
舒海生; 高恩武; 张法; 李世丹; 董立强
2013-01-01
针对声子晶体直梁的低维窄带减振特性的不足,提出了一类声子晶体角梁.采用传递矩阵法对角梁进行了理论分析和数值求解,并进行有限元仿真验证.分析结果表明:声子晶体角梁能够通过纵向振动和弯曲振动的转化使得组成梁的两种带隙同时得以发挥减振作用,从而有效地实现了宽频多维减振；声子晶体角梁的构造角度对其减振性能有明显的影响,90°角梁减振能力明显优于45°和135°情况；当加载角由0°向90°变化时,角梁内的振动由纵向振动为主逐渐过渡到弯曲振动占主导地位,弯曲带隙内的衰减也随之更加显著,反之亦然；扭簧能够加强角梁的“弹簧-振子”效应,不仅可以增加总振动带隙的宽度和衰减量,而且提高了低频区减振能力.%Aiming at the problem that the straight beam of PCs has the shortage of low-dimensional and narrow frequency band damping characteristics,a kind of angle type beam of PCs was proposed.The transfer matrix method was used in theoretical analysis,numerical solutions of vibration transmissibility were obtained and further simulations were succeeded with finite element model.The results show that the angle type beam of PCs,which can transform longitudinal wave into transverse wave,can make two kinds of band gaps to simultaneously play the role of vibration attenuator so as to achieve multi-dimensional and broadband damping.The intersect angle of the angular beam of PCs has significant impact on the vibration reduction performance.The attenuation performance of the case of 90-degree is much better than that of other cases such as 45-degree and 135-degree.With the rise of loading angle from 0 to 90 degrees,the dominant vibration of the angle type beam of PCs gradually turns from the longitudinal vibration to bending vibration and the attenuation in transverse vibration band gaps also becomes more significant and vice versa.Torsional spring which
2015-03-20
successfully to realise the full applications of graphene? What is the current status of the graphene based devices or Electronics ? How the graphene...gap value has increased to 1.5eV. It is reflected in the density of states (Fig.20c). The nitrogen atoms are at a distance of 5Ȧ. And there is a...completely modified.The calculation of surface doping of graphene with S is repeated with 96 atom simulation cell. The band gap value is 0.7 eV. The value of
Graded band gap GaInNAs solar cells
Energy Technology Data Exchange (ETDEWEB)
Langer, F.; Perl, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen Research Center for Complex, Material Systems, University of Würzburg, Am Hubland, Würzburg D97074 (Germany); Höfling, S. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen Research Center for Complex, Material Systems, University of Würzburg, Am Hubland, Würzburg D97074 (Germany); SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS (United Kingdom)
2015-06-08
Dilute nitride GaInN(Sb)As with a band gap (E{sub g}) of 1.0 eV is a promising material for the integration in next generation multijunction solar cells. We have investigated the effect of a compositionally graded GaInNAs absorber layer on the spectral response of a GaInNAs sub cell. We produced band gap gradings (ΔE{sub g}) of up to 39 meV across a 1 μm thick GaInNAs layer. Thereby, the external quantum efficiency—compared to reference cells—was increased due to the improved extraction of photo-generated carriers from 34.0% to 36.7% for the wavelength range from 900 nm to 1150 nm. However, this device figure improvement is accompanied by a small decrease in the open circuit voltage of about 20 mV and the shift of the absorption edge to shorter wavelengths.
Narrow band gap conjugated polymers for emergent optoelectronic technologies
Azoulay, Jason D.; Zhang, Benjamin A.; London, Alexander E.
2015-09-01
Conjugated organic molecules effectively produce and harvest visible light and find utility in a variety of emergent optoelectronic technologies. There is currently interest in expanding the scope of these materials to extend functionality into the infrared (IR) spectral regions and endow functionality relevant in emergent technologies. Developing an understanding of the interplay between chemical and electronic structure in these systems will require control of the frontier orbital energetics (separation, position, and alignment), ground state electronic configurations, interchain arrangements, solid-state properties, and many other molecular features with synthetic precision that has yet to be demonstrated. Bridgehead imine substituted 4H-cyclopenta[2,1-b:3,4-b']dithiophene (CPDT) structural units, in combination with strong acceptors with progressively delocalized π-systems, afford modular donor-acceptor copolymers with broad and long wavelength absorption that spans technologically relevant wavelength (λ) ranges from 0.7 < λ < 3.2 μm.1 Here we demonstrate that electronic and structural manipulation play a major role in influencing the energetics of these systems and ultimately controlling the band gap of the materials. These results bear implication in the development of very narrow band gap systems where precise control will be necessary for achieving desired properties such as interactions with longer wavelength light.
Band structure characteristics of T-square fractal phononic crystals
Institute of Scientific and Technical Information of China (English)
Liu Xiao-Jian; Fan You-Hua
2013-01-01
The T-square fractal two-dimensional phononic crystal model is presented in this article.A comprehensive study is performed for the Bragg scattering and locally resonant fractal phononic crystal.We find that the band structures of the fractal and non-fractal phononic crystals at the same filling ratio are quite different through using the finite element method.The fractal design has an important impact on the band structures of the two-dimensional phononic crystals.
Photonic gap vanishing in one-dimensional photonic crystals with single-negative metamaterials
Energy Technology Data Exchange (ETDEWEB)
Chen, Yihang, E-mail: kallenmail@sina.com [Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China); Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou (China); Wang, Yu; Leung, C.W.; Hu, Mingzhe; Chan, H.L.W. [Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China)
2011-06-13
The properties of photonic band gap in one-dimensional photonic crystals composed of single-negative metamaterials are studied theoretically. Our study shows that the photonic gap will vanish at a certain incident angle when both the phase-match and impedance-match conditions are satisfied simultaneously, suggesting that the bandwidth and location of the photonic gap are strongly dependent on the incident angle and polarization. However, the photonic gap will not vanish and may become insensitive to the incident angle when the two match conditions cannot be met. Our study also shows that losses in metamaterials have little effect on the properties of the photonic gap. -- Highlights: → Photonic gap of 1D photonic crystal containing metamaterials was investigated. → The gap can be designed to be sensitive or insensitive to the incident angle. → The gap can be designed to be close at a specific incident angle. → Conditions for photonic gap vanishing were proposed. → Losses of metamaterials have little effect on the properties of the photonic gap.
Photonic band-gap properties for two-component slow light
Ruseckas, J; Juzeliunas, G; Unanyan, R G; Otterbach, J; Fleischhauer, M
2011-01-01
We consider two-component "spinor" slow light in an ensemble of atoms coherently driven by two pairs of counterpropagating control laser fields in a double tripod-type linkage scheme. We derive an equation of motion for the spinor slow light (SSL) representing an effective Dirac equation for a massive particle with the mass determined by the two-photon detuning. By changing the detuning the atomic medium acts as a photonic crystal with a controllable band gap. If the frequency of the incident probe light lies within the band gap, the light tunnels through the sample. For frequencies outside the band gap, the transmission probability oscillates with increasing length of the sample. In both cases the reflection takes place into the complementary mode of the probe field. We investigate the influence of the finite excited state lifetime on the transmission and reflection coefficients of the probe light. We discuss possible experimental implementations of the SSL using alkali atoms such as Rubidium or Sodium.
Study on electro-optic properties of two-dimensional PLZT photonic crystal band structure
Institute of Scientific and Technical Information of China (English)
TONG Kai; WU Xiao-gang; WANG Mei-ting
2011-01-01
The band characteristics of two-dimensional (2D) lead lanthanum zirconate titanate (PLZT) photonic cystals are analyzed by finite element method. The electro-optic effect of PLZT can cause the refractive index change when it is imposed by the applied electric field, and the band structure of 2D photonic crystals based on PLZT varies accordingly. The effect of the applied electric field on the structural characteristics of the first and second band gaps in 2D PLZT photonic crystals is analyzed in detail. And the results show that for each band gap, the variations of start wavelength, cut-off wavelength and bandwidth are proportional to quadratic of the electric field.
Photonic band structure of ZnO photonic crystal slab laser
Yamilov, A; Cao, H
2005-01-01
We recently reported on the first realization of ultraviolet photonic crystal laser based on zinc oxide [Appl. Phys. Lett. {\\bf 85}, 3657 (2004)]. Here we present the details of structural design and its optimization. We develop a computational super-cell technique, that allows a straightforward calculation of the photonic band structure of ZnO photonic crystal slab on sapphire substrate. We find that despite of small index contrast between the substrate and the photonic layer, the low order eigenmodes have predominantly transverse-electric (TE) or transverse-magnetic (TM) polarization. Because emission from ZnO thin film shows strong TE preference, we are able to limit our consideration to TE bands, spectrum of which can possess a complete photonic band gap with an appropriate choice of structure parameters. We demonstrate that the geometry of the system may be optimized so that a sizable band gap is achieved.
Band Gap Engineering and Layer-by-Layer Band Gap Mapping of Selenium-doped Molybdenum Disulfide
Energy Technology Data Exchange (ETDEWEB)
Gong, Yongji [Rice University; Liu, Zheng [Rice University; Lupini, Andrew R [ORNL; Lin, Junhao [ORNL; Pantelides, Sokrates T [ORNL; Pennycook, Stephen J [ORNL; Zhou, Wu [ORNL; Ajayan, Pullikel M [Rice University
2014-01-01
Ternary two-dimensional dichalcogenide alloys exhibit compositionally modulated electronic structure and hence, control of dopant concentration within each layer of these layered compounds provides a powerful way to modify their properties. The challenge then becomes quantifying and locating the dopant atoms within each layer in order to better understand and fine-tune the desired properties. Here we report the synthesis of selenium substitutionally doped molybdenum disulfide atomic layers, with a broad range of selenium concentrations, resulting in band gap modulations of over 0.2 eV. Atomic scale chemical analysis using Z-contrast imaging provides direct maps of the dopant atom distribution in individual MoS2 layers and hence a measure of the local band gaps. Furthermore, in a bilayer structure, the dopant distribution of each layer is imaged independently. We demonstrate that each layer in the bilayer contains similar doping levels, randomly distributed, providing new insights into the growth mechanism and alloying behavior in two-dimensional dichalcogenide atomic layers. The results show that growth of uniform, ternary, two-dimensional dichalcogenide alloy films with tunable electronic properties is feasible.
Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO2
Waterhouse, G. I. N.
2013-10-10
Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO
Unfolding the band structure of non-crystalline photonic band gap materials.
Tsitrin, Samuel; Williamson, Eric Paul; Amoah, Timothy; Nahal, Geev; Chan, Ho Leung; Florescu, Marian; Man, Weining
2015-08-20
Non-crystalline photonic band gap (PBG) materials have received increasing attention, and sizeable PBGs have been reported in quasi-crystalline structures and, more recently, in disordered structures. Band structure calculations for periodic structures produce accurate dispersion relations, which determine group velocities, dispersion, density of states and iso-frequency surfaces, and are used to predict a wide-range of optical phenomena including light propagation, excited-state decay rates, temporal broadening or compression of ultrashort pulses and complex refraction phenomena. However, band calculations for non-periodic structures employ large super-cells of hundreds to thousands building blocks, and provide little useful information other than the PBG central frequency and width. Using stereolithography, we construct cm-scale disordered PBG materials and perform microwave transmission measurements, as well as finite-difference time-domain (FDTD) simulations. The photonic dispersion relations are reconstructed from the measured and simulated phase data. Our results demonstrate the existence of sizeable PBGs in these disordered structures and provide detailed information of the effective band diagrams, dispersion relation, iso-frequency contours, and their angular dependence. Slow light phenomena are also observed in these structures near gap frequencies. This study introduces a powerful tool to investigate photonic properties of non-crystalline structures and provides important effective dispersion information, otherwise difficult to obtain.
Band gap tuning of epitaxial SrTiO{sub 3-δ}/Si(001) thin films through strain engineering
Energy Technology Data Exchange (ETDEWEB)
Cottier, Ryan J.; Steinle, Nathan A.; Currie, Daniel A.; Theodoropoulou, Nikoleta, E-mail: ntheo@txstate.edu [Physics Department, Texas State University, San Marcos, Texas 78666 (United States)
2015-11-30
We investigate the effect of strain and oxygen vacancies (V{sub O}) on the crystal and optical properties of oxygen deficient, ultra-thin (4–30 nm) films of SrTiO{sub 3-δ} (STO) grown heteroepitaxially on p-Si(001) substrates by molecular beam epitaxy. We demonstrate that STO band gap tuning can be achieved through strain engineering and show that the energy shift of the direct energy gap transition of SrTiO{sub 3-δ}/Si films has a quantifiable dimensional and doping dependence that correlates well with the changes in crystal structure.
Experimental Characterization of Photonic Band Crystals for Tera Hertz Devices
2004-01-01
SUBTITLE 5. FUNDING NUMBERS Experimental Characterization of Photonic Band Crystals for Tera F49620-01-1-0484 Hertz Devices 6. AUTHOR(S) Dennis W...01-1-0484 REPORT TITLE: Experimental Characterization of Photonic Band Crystals for Tera Hertz Devices SUBMITTED FOR PUBLICATION TO (applicable only
Two-dimensional silica: Structural, mechanical properties, and strain-induced band gap tuning
Energy Technology Data Exchange (ETDEWEB)
Gao, Enlai; Xie, Bo [Applied Mechanics Laboratory, Department of Engineering Mechanics, and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084 (China); Xu, Zhiping, E-mail: xuzp@tsinghua.edu.cn [Applied Mechanics Laboratory, Department of Engineering Mechanics, and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084 (China); State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)
2016-01-07
Two-dimensional silica is of rising interests not only for its practical applications as insulating layers in nanoelectronics, but also as a model material to understand crystals and glasses. In this study, we examine structural and electronic properties of hexagonal and haeckelite phases of silica bilayers by performing first-principles calculations. We find that the corner-sharing SiO{sub 4} tetrahedrons in these two phases are locally similar. The robustness and resilience of these tetrahedrons under mechanical perturbation allow effective strain engineering of the electronic structures with band gaps covering a very wide range, from of that for insulators, to wide-, and even narrow-gap semiconductors. These findings suggest that the flexible 2D silica holds great promises in developing nanoelectronic devices with strain-tunable performance, and lay the ground for the understanding of crystalline and vitreous phases in 2D, where bilayer silica provides an ideal test-bed.
Lewis acid adducts of narrow band gap conjugated polymers.
Welch, Gregory C; Bazan, Guillermo C
2011-03-30
We report on the interaction of Lewis acids with narrow band gap conjugated copolymers containing donor and acceptor units. Examination of the widely used poly[(4,4-bis(2-ethylhexyl)cyclopenta-[2,1-b:3,4-b']dithiophene)-2,6-(diyl-alt-benzo[2,1,3]thiadiazole)-4,7-diyl] (1) shows weaker binding with B(C(6)F(5))(3) when compared with a small molecule that contains a cyclopenta-[2,1-b:3,4-b']dithiophene (CDT) unit flanked by two benzo[2,1,3]thiadiazole (BT) fragments. Studies on model compounds representative of 1, together with a comparison between B(C(6)F(5))(3) and BBr(3), indicate that the propensity for Lewis acid coordination is decreased because of steric encumbrance surrounding the BT nitrogen sites. These observations led to the design of chromophores that incorporate an acceptor unit with a more basic nitrogen site, namely pyridal[2,1,3]thiadiazole (PT). That this strategy leads to a stronger B-N interaction was demonstrated through the examination of the reaction of B(C(6)F(5))(3) with two small molecules bis(4,4-bis(hexyl)-4H-cyclopenta[2,1-b;3,4-b']dithiophene)-4,7-pyridal[2,1,3]thiadiazole (8) and bis{2-thienyl-(4,4-bis(hexyl)-4H-cyclopenta[2,1-b;3,4-b']dithiophene)}-4,7-pyridal[2,1,3]thiadiazole (9) and two polymer systems (poly[(4,4-bis(2-ethylhexyl)cyclopenta-[2,1-b:3,4-b']dithiophene)-2,6-diyl-alt-([1,2,5]thiadiazolo[3,4-c]pyridine)-4,7-diyl] (10) and poly[(4,4-bis(2-ethylhexyl)cyclopenta-[2,1-b:3,4-b']dithiophene)-2,6-diyl-alt-(4',7'-bis(2-thienyl)-[1,2,5]thiadiazolo[3,4-c]pyridine)-5,5-diyl] (11). From a materials perspective, it is worth pointing out that through the binding of B(C(6)F(5))(3), new NIR-absorbing polymers can be generated with band gaps from 1.31 to 0.89 eV. A combination of studies involving ultraviolet photoemission spectroscopy and density functional theory shows that the narrowing of the band gap upon borane coordination to the pyridal nitrogen on PT is a result of lowering the energies of both the highest occupied molecular
Temperature Dependent Switching Behavior of BFN Thin Films: a Wide Band Gap Semiconductor
Directory of Open Access Journals (Sweden)
Devang D. Shah
2011-01-01
Full Text Available The thin film of complex perovskite Ba(Fe0.5Nb0.5O3 (BFN was prepared through Pulsed Laser Deposition (PLD technique. XRD and AFM studies show single cubic phase with well developed nano size grains of BFN compound. Swift Heavy Ion (SHI irradiation on BFN of O+7 ions up to 1 × 1013 ions per cc fluence does not show any crystal or morphological structural changes in the film, signifying materials stability up to the above ion dose. BFN compound exhibit its band gap in wide band semiconductor region (3.53 eV. A characteristic negative temperature coefficient of resistance (NTCR to positive temperature coefficient of resistance (PTCR transition of large magnitude at ~ 350 °C makes BFN a promising candidate for electrical/magnetic switching device.
Functionally Graded Thermoelectric Material though One Step Band Gap and Dopant Engineering
DEFF Research Database (Denmark)
Jensen, Ellen Marie; Borup, Kasper Andersen; Cederkrantz, Daniel;
For a given doping level a thermoelectric material is optimized for a given temperature. Thermoelectric modules, however, operates over large gradients in temperature. To circumvent this problem we have synthesized a functionally graded thermoelectric material optimized for large temperature...... gradients. It has previously been shown that a large functionally graded thermoelectric single crystal can be synthesized by the Czochralski method (1). Utilizing element gradients inherent to the Czochralski process we have synthesized a Ge1-xSix:B crystal with a continuously varying x, band gap......, and dopant concentration. Parameters relevant to the thermoelectric properties have been determined along the pulling direction. All of these properties exhibit the wanted gradient. It has thereby been shown that engineering of the electrical contributions to the thermoelectric properties of a material...
Parhoodeh, Saeed; Kowsari, Mohammad
2016-10-01
In this study, effects of vanadium doping in crystal lattice structure of indium oxide (In2O3) were investigated. Indium oxide nanoparticles with different amounts of dopant concentrations were fabricated by a facile and cost effective method. X-ray diffraction (XRD) analysis revealed the formation of cubic phase for doped and undoped samples. It was observed that the lattice parameters of doped samples were decreased respect to the pure indium oxide, but the crystallite sizes and the particles' sizes of doped samples were increased in result of substitution of vanadium in crystal lattice of In2O3. The scanning electron microscope (SEM) images of samples showed that all samples have spherical shapes, and their distribution sizes are between 10 and 70 nm. It was found that the average sizes of nanoparticles were increased linearly with the amounts of dopant concentration. A red shift was founded in the band gap of vanadium doped samples respect to pure In2O3. The maximum of the band gap shift was observed for samples with 0.025 M concentration of dopant. Based on impedance spectroscopy data, it was found that impedances of samples are increased by increasing of dopant concentration for all frequencies which were tested in this study.
Vidal Faez, Angelo
2012-07-01
Researchers have argued for many years that one of the conditions for omnidirectional reflection in a one-dimensional photonic crystal is a strong refractive index contrast between the two constituent dielectric materials. Using numerical simulations and the theory of Anderson localization of light, in this work we demonstrate that an omnidirectional band gap can indeed be created utilizing low refractive index contrast materials when they are arranged in a disordered manner. Moreover, the size of the omnidirectional band gap becomes a controllable parameter, which now depends on the number of layers and not only on the refractive index contrast of the system, as it is widely accepted. This achievement constitutes a major breakthrough in the field since it allows for the development of cheaper and more efficient technologies. Of particular interest is the case of high index contrast one-dimensional photonic crystal fibers, where the propagation losses are mainly due to increased optical scattering from sidewall roughness at the interfaces of high index contrast materials. By using low index contrast materials these losses can be reduced dramatically, while maintaining the confinement capability of the waveguide. This is just one of many applications that could be proven useful for this discovery.
Energy Technology Data Exchange (ETDEWEB)
Parhoodeh, Saeed, E-mail: saeed.parhoodeh@gmail.com [Physics Department, Shiraz branch, Islamic Azad University, Shiraz (Iran, Islamic Republic of); Kowsari, Mohammad [Department of Electronics, Sepidan branch, Islamic Azad University, Sepidan (Iran, Islamic Republic of)
2016-10-01
In this study, effects of vanadium doping in crystal lattice structure of indium oxide (In{sub 2}O{sub 3}) were investigated. Indium oxide nanoparticles with different amounts of dopant concentrations were fabricated by a facile and cost effective method. X-ray diffraction (XRD) analysis revealed the formation of cubic phase for doped and undoped samples. It was observed that the lattice parameters of doped samples were decreased respect to the pure indium oxide, but the crystallite sizes and the particles’ sizes of doped samples were increased in result of substitution of vanadium in crystal lattice of In{sub 2}O{sub 3}. The scanning electron microscope (SEM) images of samples showed that all samples have spherical shapes, and their distribution sizes are between 10 and 70 nm. It was found that the average sizes of nanoparticles were increased linearly with the amounts of dopant concentration. A red shift was founded in the band gap of vanadium doped samples respect to pure In{sub 2}O{sub 3}. The maximum of the band gap shift was observed for samples with 0.025 M concentration of dopant. Based on impedance spectroscopy data, it was found that impedances of samples are increased by increasing of dopant concentration for all frequencies which were tested in this study.
Samajdar, D. P.; Dhar, S.
2016-03-01
Quantum dielectric Theory (QDT) is used to explain the band gap bowing effect observed in III-V-Bismides such as InSb1-xBix, InAs1-xBix, InP1-xBix, GaSb1-xBix, GaAs1-xBix and GaP1-xBix. The dependence of the direct E0 band gap for these alloys on Bi mole fraction is calculated using QDT which requires the evaluation of the bowing parameter c. The bowing parameter gives the deviation of the direct E0 band gap from the linear relationship of E0 with Bi mole fraction. The band gap reduction values obtained using QDT are compared with those calculated using Virtual Crystal approximation (VCA) and Valence Band Anticrossing (VBAC) model as well as with the reported experimental data and the results of the comparison shows excellent agreement.
2016-01-26
performed. 2.0 INTRODUCTION Three dimensional (3D) photonic crystals and their optical properties have attracted a lot of attention in the past decade... physical phenomena. The band gap frequency of this system can be varied to tailor to the electronic transition levels of a gain medium such as InAs...quantum dot or an InGaAs quantum well. The band gap can be varied in addition to include either one or two electronic levels of a multi-level system
Optical Properties of One-dimensional Three-component Photonic Band Gap Structure
Institute of Scientific and Technical Information of China (English)
无
2003-01-01
Theoretical study of the optical properties of one-dimensional three-component photonic band gap structure, which is composed of three alternating dielectric layers of different refractive indices and thickness in a unit cell, is performed. This one-dimensional photonic band gap structure exhibits the transparency band and forbidden band. We find that there are several mini-bands of the allowed transmission to be created within the photonic band gap region of the structure if a defect designed specially is introduced inside the structure. This characteristic is very important for some practical applications.
Reduction of Refractive Index Contrast Threshold for Photonic Band-Gap in Square Lattices
Institute of Scientific and Technical Information of China (English)
WANG Jian-Feng; HUANG Yi-Dong; ZHANG Wei; PENG Jiang-De
2005-01-01
@@ The threshold of refractive index contrast (RIC) to open a photonic band gap can be reduced by symmetry breaking. For the case of square lattice composed by dielectric cylinders, the absolute band gap is demonstrated by inserting small rods in the centre of the lattices, and the threshold RIC is reduced to 3.8. As for the square lattices composed by air holes in dielectric, the minimal RIC required for an absolute band gap decreases to 2.20.
Band gap engineering in silicene: A theoretical study of density functional tight-binding theory
Zaminpayma, Esmaeil; Nayebi, Payman
2016-10-01
In this work, we performed first principles calculations based on self-consistent charge density functional tight-binding to investigate different mechanisms of band gap tuning of silicene. We optimized structures of silicene sheet, functionalized silicene with H, CH3 and F groups and nanoribbons with the edge of zigzag and armchair. Then we calculated electronic properties of silicene, functionalized silicene under uniaxial elastic strain, silicene nanoribbons and silicene under external electrical fields. It is found that the bond length and buckling value for relaxed silicene is agreeable with experimental and other theoretical values. Our results show that the band gap opens by functionalization of silicene. Also, we found that the direct band gap at K point for silicene changed to the direct band gap at the gamma point. Also, the functionalized silicene band gap decrease with increasing of the strain. For all sizes of the zigzag silicene nanoribbons, the band gap is near zero, while an oscillating decay occurs for the band gap of the armchair nanoribbons with increasing the nanoribbons width. At finally, it can be seen that the external electric field can open the band gap of silicene. We found that by increasing the electric field magnitude the band gap increases.
Urbach's rule derived from thermal fluctuations in the band-gap energy
DEFF Research Database (Denmark)
Skettrup, Torben
1978-01-01
The exponential absorption edge (known as Urbach's rule) observed in most materials is interpreted in terms of thermal fluctuations in the band-gap energy. The main contribution to the temperature shift of the band-gap energy is due to the temperature-dependent self-energies of the electrons...... and holes interacting with the phonons. Since the phonon number is fluctuating in thermal equilibrium, the band-gap energy is also fluctuating resulting in an exponential absorption tail below the average band-gap energy. These simple considerations are applied to derive Urbach's rule at high temperatures...
Low Band Gap Polymers for Roll-to-Roll Coated Polymer Solar Cells
DEFF Research Database (Denmark)
2010-01-01
We present the synthesis of a low band gap copolymer based on dithienothiophene and dialkoxybenzothiadiazole (poly(dithienothiophene-co-dialkoxybenzothiadiazole), PDTTDABT). The optical properties of the polymer showed a band gap of 1.6 eV and a sky-blue color in solid films. The polymer was expl......We present the synthesis of a low band gap copolymer based on dithienothiophene and dialkoxybenzothiadiazole (poly(dithienothiophene-co-dialkoxybenzothiadiazole), PDTTDABT). The optical properties of the polymer showed a band gap of 1.6 eV and a sky-blue color in solid films. The polymer...
The improvement of hole transport property and optical band gap for amorphous Cu{sub 2}O films
Energy Technology Data Exchange (ETDEWEB)
Huang, Qin; Li, Jin; Bi, Xiaofang
2015-10-25
This work presents an interesting observation that the suppression of crystallization for p-type Cu{sub 2}O facilitates the transition of transport behaviors from variable-range-hopping (VRH) to Arrhenius-like mechanism and further lead to a great reduction of thermal activation energy. Raman spectroscopy analysis shows a distortion of symmetrical O–Cu–O crosslink structure in the amorphous Cu{sub 2}O. The disruption of symmetry is revealed to increase dispersion of upper valence band and reduce Fermi as well, which results in possible intrusion of the Fermi level into a band tail state adjacent to the upper valence band level. Meanwhile, the amorphous Cu{sub 2}O film shows an optical band gap of 2.7 eV, much larger than 2.0 eV for the crystalline counterparts. The blue shift is consistent with the variation of energy band structure with the film changing from crystalline to amorphous state, suggesting that the O-mediated d–d interaction can be weakened with the nonsymmetrical structure in amorphous phase. - Graphical abstract: Suppression of crystallization for p-type Cu{sub 2}O is observed to facilitate the transition of transport behaviors from variable-range-hopping to the Arrhenius-like behavior based on the band tail transport mode. The amorphous Cu{sub 2}O film also shows a blue shift as compared to its crystalline counterpart. The effect of amorphous structure on the performances is discussed in combination with Raman spectroscopy and band structure calculation. - Highlights: • Amorphous Cu{sub 2}O films show Arrhenius-like p-type conductivity. • Raman spectroscopy is analyzed on the change of crystallization. • Physical origin of the transport behavior is clarified with electronic structure. • Optical band gap can be widened by suppressing crystallization of Cu{sub 2}O.
Photonic-Band-Gap Traveling-Wave Gyrotron Amplifier
Nanni, E. A.; Lewis, S. M.; Shapiro, M. A.; Griffin, R. G.; Temkin, R. J.
2014-01-01
We report the experimental demonstration of a gyrotron traveling-wave-tube amplifier at 250 GHz that uses a photonic band gap (PBG) interaction circuit. The gyrotron amplifier achieved a peak small signal gain of 38 dB and 45 W output power at 247.7 GHz with an instantaneous −3 dB bandwidth of 0.4 GHz. The amplifier can be tuned for operation from 245–256 GHz. The widest instantaneous −3 dB bandwidth of 4.5 GHz centered at 253.25 GHz was observed with a gain of 24 dB. The PBG circuit provides stability from oscillations by supporting the propagation of transverse electric (TE) modes in a narrow range of frequencies, allowing for the confinement of the operating TE03-like mode while rejecting the excitation of oscillations at nearby frequencies. This experiment achieved the highest frequency of operation for a gyrotron amplifier; at present, there are no other amplifiers in this frequency range that are capable of producing either high gain or high output power. This result represents the highest gain observed above 94 GHz and the highest output power achieved above 140 GHz by any conventional-voltage vacuum electron device based amplifier. PMID:24476286
Pattern reconfigurable antenna using electromagnetic band gap structure
Ismail, M. F.; Rahim, M. K. A.; Majid, H. A.; Hamid, M. R.; Yusoff, M. F. M.; Dewan, R.
2017-01-01
In this paper, a single rectangular patch antenna incorporated with an array of electromagnetic band gap (EBG) structures is proposed. The proposed antenna features radiation pattern agility by means of connecting the shorting pin vias to the EBG unit cells. The proposed design consists of 32 mm × 35.5 mm rectangular patch antenna and 10.4-mm-square mushroom-like EBG unit cells. The EBGs are placed at both sides of the antenna radiating patch and located on the thicker substrate of thickness, h. The copper tape which represents the PIN diode is used to control the connection between the EBG's via and the ground plane as reconfigurable mechanism of the antenna. The simulated result shows by switching the ON and OFF EBG structures in either sides or both, the directional radiation pattern can be tilted from 0 to +14°. The proposed antenna exhibits 7.2 dB realized gain at 2.42 GHz. The parametric study on EBG and antenna is also discussed.
Mini-stop bands in single-defect photonic crystal waveguides
Agio, M; Agio, Mario; Soukoulis, Costas M.
2001-01-01
We numerically study single-defect photonic crystal waveguides obtained from a triangular lattice of air holes in a dielectric background. It is found that, for medium-high air filling ratios, the transmission has very small values in narrow frequency regions lying inside the photonic band gap - the so-called mini-stop bands. Two types of mini-stop bands are shown to exist; one of which is due to the multimode nature of the waveguide. Their dependence on the length of the waveguide and on the air filling ratio is presented.
Photonic band structures of two-dimensional photonic crystals with deformed lattices
Institute of Scientific and Technical Information of China (English)
Cai Xiang-Hua; Zheng Wan-Hua; Ma Xiao-Tao; Ren Gang; Xia Jian-Bai
2005-01-01
Using the plane-wave expansion method, we have calculated and analysed the changes of photonic band structures arising from two kinds of deformed lattices, including the stretching and shrinking of lattices. The square lattice with square air holes and the triangular lattice with circular air holes are both studied. Calculated results show that the change of lattice size in some special ranges can enlarge the band gap, which depends strongly on the filling factor of air holes in photonic crystals; and besides, the asymmetric band edges will appear with the broken symmetry of lattices.
Study on temperature property of band structures in onedimensional photonic crystals
Institute of Scientific and Technical Information of China (English)
无
2007-01-01
Using transfer matrix method, the optical transmission properties in one-dimensional (1-D) photonic crystal is analyzed.When the temperature varies, not only the refractive index of the optical medium is changed because of the thermo-optical effect, but also the thickness of the optical medium is changed due to the thermal-expansion effect. Thus, the structure of 1/4 wave-plate stack in original photonic crystal is destroyed and the band structure varies. In this work, the effects of the temperature variation on the first and second band gap in a 1-D photonic crystal are analyzed in detail. It is found that the changes of the starting wavelength, the cut-off wavelength and the forbidden band width depend linearly on the temperature.
{ital In Situ} Band Gap Engineering of Carbon Nanotubes
Energy Technology Data Exchange (ETDEWEB)
Crespi, V.H.; Cohen, M.L. [Department of Physics, University of California at Berkeley, Berkeley, California 94720, and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Rubio, A. [Departamento de Fisica Teorica, Universidad de Valladolid, E-47011 Valladolid (Spain)
1997-09-01
Bond rotation defects close the gap in large-gap nanotubes, open the gap in small-gap nanotubes, and increase the density of states in metallic nanotubes. Not only are these defects likely to be present in as-grown nanotubes, but they could be introduced locally into intact nanotubes, thereby opening a new road towards device applications. {copyright} {ital 1997} {ital The American Physical Society}
Narrow Band Gap Lead Sulfide Hole Transport Layers for Quantum Dot Photovoltaics.
Zhang, Nanlin; Neo, Darren C J; Tazawa, Yujiro; Li, Xiuting; Assender, Hazel E; Compton, Richard G; Watt, Andrew A R
2016-08-24
The band structure of colloidal quantum dot (CQD) bilayer heterojunction solar cells is optimized using a combination of ligand modification and QD band gap control. Solar cells with power conversion efficiencies of up to 9.33 ± 0.50% are demonstrated by aligning the absorber and hole transport layers (HTL). Key to achieving high efficiencies is optimizing the relative position of both the valence band and Fermi energy at the CQD bilayer interface. By comparing different band gap CQDs with different ligands, we find that a smaller band gap CQD HTL in combination with a more p-type-inducing CQD ligand is found to enhance hole extraction and hence device performance. We postulate that the efficiency improvements observed are largely due to the synergistic effects of narrower band gap QDs, causing an upshift of valence band position due to 1,2-ethanedithiol (EDT) ligands and a lowering of the Fermi level due to oxidation.
Growth, Band Structure and Optical Properties of LiSrBO3 Crystal
Institute of Scientific and Technical Information of China (English)
无
2007-01-01
The bulk crystal of LiSrBO3(8.39 g) with a size of 21mm × 20mm × 15mm was grown by high temperature solution growth method. The relationship between growth habit and crystal structure was discussed. The transmission spectrum shows an UV absorption edge at about 300 nm. The melting temperature of this crystal was determined to be 942 ℃ by DTA-TG measurement. The band structure of the LiSrBO3 crystal was studied by means of the first principle method. An indirect band gap was found to be about 4.0 eV, and a low dielectric constant was estimated to be about 1.9 in terms of theoretical results.
The optical band gap investigation of PVP-capped ZnO nanoparticles synthesized by sol-gel method
Yuliah, Yayah; Bahtiar, Ayi; Fitrilawati, Siregar, Rustam E.
2016-02-01
ZnO Nanoparticles (NPs) has unique natures on their crystal structure, direct band gap and high exciton binding energy, consequently applied in optoelectronic devices such as solar cells, optical wave guide and light emitting diodes (LED). However the drawback was ZnO NPs tend to agglomerate and turn to nano-structured materials with poor properties. Effort to avoid agglomerations generally resolved by surface modification of ZnO NPs to obtain well-dispersed suspension. However changes in the surface of ZnO NPs may change the electronic structure and density of states of ZnO NPs, in turn may change the optical band gap. Thus, the objective of current research is investigation of optical band gap of ZnO NPs due to surface modification by capping agent of poly-4-vinylpyrrolidone (PVP) molecules. Uncapped and PVP-capped ZnO nanoparticles were prepared by sol-gel method. The characteristics of surface modifications were investigated by UV-Vis and Photo Luminescence spectroscopy and Transmission Electron Microscope (TEM). The results shows the surface modification has change the band gap of ZnO NPs obtained at second precipitated stage. In contrast, the change of the optical band gap did not observe due to the surface modification of ZnO NPs obtained at the first stage. It was concluded that PVP capping on ZnO NPs did not affect on the band gap when the capping was performed on first stage. It is emphasized that this statement also supported by TEM images observations.
High-power picosecond pulse delivery through hollow core photonic band gap fibers
DEFF Research Database (Denmark)
Michieletto, Mattia; Johansen, Mette Marie; Lyngsø, Jens Kristian;
2015-01-01
We demonstrated robust and bend insensitive fiber delivery of high power pulsed laser with diffraction limited beam quality for two different kind of hollow core photonic band gap fibers......We demonstrated robust and bend insensitive fiber delivery of high power pulsed laser with diffraction limited beam quality for two different kind of hollow core photonic band gap fibers...
Alatas, Husin; Sumaryada, Tony I.; Ahmad, Faozan
2015-01-01
We have investigated the characteristics of local density of optical states (LDOS) at photonic band gap resonant wavelength of an asymmetric waveguide grating based on Green's function formulation. It is found that the LDOS of the considered structure exhibits different characteristics in its localization between the upper and lower resonant wavelengths of the corresponding photonic band gap edges.
True photonic band-gap mode-control in VCSEL structures
DEFF Research Database (Denmark)
Romstad, F.; Madsen, M.; Birkedal, Dan;
2003-01-01
Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....
Isotropic band gaps and freeform waveguides observed in hyperuniform disordered photonic solids.
Man, Weining; Florescu, Marian; Williamson, Eric Paul; He, Yingquan; Hashemizad, Seyed Reza; Leung, Brian Y C; Liner, Devin Robert; Torquato, Salvatore; Chaikin, Paul M; Steinhardt, Paul J
2013-10-01
Recently, disordered photonic media and random textured surfaces have attracted increasing attention as strong light diffusers with broadband and wide-angle properties. We report the experimental realization of an isotropic complete photonic band gap (PBG) in a 2D disordered dielectric structure. This structure is designed by a constrained optimization method, which combines advantages of both isotropy due to disorder and controlled scattering properties due to low-density fluctuations (hyperuniformity) and uniform local topology. Our experiments use a modular design composed of Al2O3 walls and cylinders arranged in a hyperuniform disordered network. We observe a complete PBG in the microwave region, in good agreement with theoretical simulations, and show that the intrinsic isotropy of this unique class of PBG materials enables remarkable design freedom, including the realization of waveguides with arbitrary bending angles impossible in photonic crystals. This experimental verification of a complete PBG and realization of functional defects in this unique class of materials demonstrate their potential as building blocks for precise manipulation of photons in planar optical microcircuits and has implications for disordered acoustic and electronic band gap materials.
Localized crystallization in shear bands of a metallic glass
Yan, Zhijie; Song, Kaikai; Hu, Yong; Dai, Fuping; Chu, Zhibing; Eckert, Jürgen
2016-01-01
Stress-induced viscous flow is the characteristic of atomic movements during plastic deformation of metallic glasses in the absence of substantial temperature increase, which suggests that stress state plays an important role in mechanically induced crystallization in a metallic glass. However, it is poorly understood. Here, we report on the stress-induced localized crystallization in individual shear bands of Zr60Al15Ni25 metallic glass subjected to cold rolling. We find that crystallization in individual shear bands preferentially occurs in the regions neighboring the amorphous matrix, where the materials are subjected to compressive stresses demonstrated by our finite element simulations. Our results provide direct evidence that the mechanically induced crystallization kinetics is closely related with the stress state. The crystallization kinetics under compressive and tensile stresses are interpreted within the frameworks of potential energy landscape and classical nucleation theory, which reduces the role of stress state in mechanically induced crystallization in a metallic glass.
Understanding Band Gaps of Solids in Generalized Kohn-Sham Theory
Perdew, John P; Burke, Kieron; Yang, Zenghui; Gross, Eberhard K U; Scheffler, Matthias; Scuseria, Gustavo E; Henderson, Thomas M; Zhang, Igor Ying; Ruzsinszky, Adrienn; Peng, Haowei; Sun, Jianwei
2016-01-01
The fundamental energy gap of a periodic solid distinguishes insulators from metals and characterizes low-energy single-electron excitations. But the gap in the band-structure of the exact multiplicative Kohn-Sham (KS) potential substantially underestimates the fundamental gap, a major limitation of KS density functional theory. Here we give a simple proof of a new theorem: In generalized KS theory (GKS), the band gap equals the fundamental gap for the approximate functional if the GKS potential operator is continuous and the density change is delocalized when an electron or hole is added. Our theorem explains how GKS band gaps from meta-generalized gradient approximations (meta-GGAs) and hybrid functionals can be more realistic than those from GGAs or even from the exact KS potential, It also follows from earlier work. The band edges in the GKS one-electron spectrum are also related to measurable energies. A linear chain of hydrogen molecules provides a numerical illustration.
Grain size dependent optical band gap of CdI2 films
Indian Academy of Sciences (India)
Pankaj Tyagi; A G Vedeshwar
2001-06-01
The thermally evaporated stoichiometric CdI2 films show good -axis alignment normal to substrate plane for film thickness up to 200 nm. The optical absorption data indicate an allowed direct interband transition across a gap of 3.6 eV in confirmation with earlier band structure calculations. However, part of the absorption data near band edge can be fitted to an indirect band gap of 3 eV. The dependence of band gap on film thickness (> 200 nm) can be explained qualitatively in terms of decreasing grain boundary barrier height with grain size.
Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures
Energy Technology Data Exchange (ETDEWEB)
Jandieri, K., E-mail: kakhaber.jandieri@physik.uni-marburg.de; Ludewig, P.; Wegele, T.; Beyer, A.; Kunert, B.; Springer, P.; Baranovskii, S. D.; Koch, S. W.; Volz, K.; Stolz, W. [Materials Science Center and Faculty of Physics, Philipps-University Marburg, Marburg (Germany)
2015-08-14
We present experimental and theoretical studies of the composition dependence of the direct band gap energy in Ga(NAsP)/GaP quantum well heterostructures grown on either (001) GaP- or Si-substrates. The theoretical description takes into account the band anti-crossing model for the conduction band as well as the modification of the valence subband structure due to the strain resulting from the pseudomorphic epitaxial growth on the respective substrate. The composition dependence of the direct band gap of Ga(NAsP) is obtained for a wide range of nitrogen and phosphorus contents relevant for laser applications on Si-substrate.
The band gap of Cu2ZnSnSe4: Effect of order-disorder
Rey, G.; Redinger, A.; Sendler, J.; Weiss, T. P.; Thevenin, M.; Guennou, M.; El Adib, B.; Siebentritt, S.
2014-09-01
The order-disorder transition in kesterite Cu2ZnSnSe4 (CZTSe), an interesting material for solar cell, has been investigated by spectrophotometry, photoluminescence (PL), and Raman spectroscopy. Like Cu2ZnSnS4, CZTSe is prone to disorder by Cu-Zn exchanges depending on temperature. Absorption measurements have been used to monitor the changes in band gap energy (Eg) of solar cell grade thin films as a function of the annealing temperature. We show that ordering can increase Eg by 110 meV as compared to fully disordered material. Kinetics simulations show that Eg can be used as an order parameter and the critical temperature for the CZTSe order-disorder transition is 200 ± 20 °C. On the one hand, ordering was found to increase the correlation length of the crystal. But on the other hand, except the change in Eg, ordering did not influence the PL signal of the CZTSe.
Sedghi, Aliasghar; Valiaghaie, Soma; Soufiani, Ahad Rounaghi
2014-10-01
By virtue of the efficiency of the Dirichlet-to-Neumann map method, we have calculated, for H-polarization (TE mode), the band structure of 2D photonic crystals with a square lattice composed of metallic rods embedded in an air background. The rod in the unit cell is chosen to be circular in shape. Here, from a practical point of view, in order to obtain maximum band gaps, we have studied the band structure as a function of the size of the rods. We have also studied the flat bands appearing in the band structures and have shown that for frequencies around the surface plasmon frequency, the modes are highly localized at the interface between the metallic rods and the air background.
Energy Technology Data Exchange (ETDEWEB)
Sedghi, Aliasghar [Islamic Azad University, Shabestar (Iran, Islamic Republic of); Valiaghaie, Soma [Islamic Azad University, Sanandaj (Iran, Islamic Republic of); Soufiani, Ahad Rounaghi [Islamic Azad University, Sufian (Iran, Islamic Republic of)
2014-10-15
By virtue of the efficiency of the Dirichlet-to-Neumann map method, we have calculated, for H-polarization (TE mode), the band structure of 2D photonic crystals with a square lattice composed of metallic rods embedded in an air background. The rod in the unit cell is chosen to be circular in shape. Here, from a practical point of view, in order to obtain maximum band gaps, we have studied the band structure as a function of the size of the rods. We have also studied the flat bands appearing in the band structures and have shown that for frequencies around the surface plasmon frequency, the modes are highly localized at the interface between the metallic rods and the air background.
Band Gap Narrowing and Widening of ZnO Nanostructures and Doped Materials.
Kamarulzaman, Norlida; Kasim, Muhd Firdaus; Rusdi, Roshidah
2015-12-01
Band gap change in doped ZnO is an observed phenomenon that is very interesting from the fundamental point of view. This work is focused on the preparation of pure and single phase nanostructured ZnO and Cu as well as Mn-doped ZnO for the purpose of understanding the mechanisms of band gap narrowing in the materials. ZnO, Zn0.99Cu0.01O and Zn0.99Mn0.01O materials were prepared using a wet chemistry method, and X-ray diffraction (XRD) results showed that all samples were pure and single phase. UV-visible spectroscopy showed that materials in the nanostructured state exhibit band gap widening with respect to their micron state while for the doped compounds exhibited band gap narrowing both in the nano and micron states with respect to the pure ZnO materials. The degree of band gap change was dependent on the doped elements and crystallite size. X-ray photoelectron spectroscopy (XPS) revealed that there were shifts in the valence bands. From both UV-visible and XPS spectroscopy, it was found that the mechanism for band gap narrowing was due to the shifting of the valance band maximum and conduction band minimum of the materials. The mechanisms were different for different samples depending on the type of dopant and dimensional length scales of the crystallites.
Energy Technology Data Exchange (ETDEWEB)
Malashchonak, M.V., E-mail: che.malasche@gmail.com [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Streltsov, E.A., E-mail: streltea@bsu.by [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Mazanik, A.V. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Kulak, A.I., E-mail: kulak@igic.bas-net.by [Institute of General and Inorganic Chemistry, National Academy of Sciences of Belarus, Surganova str., 9/1, Minsk 220072 (Belarus); Poznyak, S.K. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Stroyuk, O.L., E-mail: stroyuk@inphyschem-nas.kiev.ua [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 prosp. Nauky, 03028 Kyiv (Ukraine); Kuchmiy, S.Ya. [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 prosp. Nauky, 03028 Kyiv (Ukraine); Gaiduk, P.I. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus)
2015-08-31
Cadmium sulfide nanoparticle (NP) deposition by the successive ionic layer adsorption and reaction (SILAR) method on the surface of mesoporous ZnO micro-platelets with a large specific surface area (110 ± 10 m{sup 2}g{sup −1}) results in the formation of ZnO/CdS heterostructures exhibiting a high incident photon-to-current conversion efficiency (Y) not only within the region of CdS fundamental absorption (Y{sub max} = 90%; 0.1 M Na{sub 2}S + 0.1 M Na{sub 2}SO{sub 3}), but also in the sub-band-gap (SBG) range (Y{sub max} = 25%). The onset potentials of SBG photoelectrochemical processes are more positive than the band-gap (BG) onset potential by up to 100 mV. A maximum incident photon-to-current conversion efficiency value for SBG processes is observed at larger amount of deposited CdS in comparison with the case of BG ones. The Urbach energy (E{sub U}) of CdS NPs determined from the photocurrent spectra reaches a maximal value on an early deposition stage (E{sub U} = 93 mV at SILAR cycle number N = 5), then lowers somewhat (E{sub U} = 73 mV at N = 10) and remains steady in the range of N from 20 to 300 (E{sub U} = 67 ± 1 mV). High efficiency of the photoelectrochemical SBG processes are interpreted in terms of light scattering in the ZnO/CdS heterostructures. - Highlights: • ZnO/CdS films demonstrate high quantum efficiency (25%) for sub-band-gap transitions. • Onset photocurrent potentials for sub-band-gap processes differ than those for band-gap ones. • Sub-band-gap transitions are caused by band-tail states in CdS nanoparticles.
Energy Technology Data Exchange (ETDEWEB)
Tang, Zheng-hua [Xiangnan University-Gospell Joint Laboratory of Microwave Communication Technology, Xiangnan University, Chenzhou 423000 (China); Jiang, Zheng-Sheng [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Chen, Tao [Laboratory of Quantum Information and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Lei, Da-Jun [Xiangnan University-Gospell Joint Laboratory of Microwave Communication Technology, Xiangnan University, Chenzhou 423000 (China); Yan, Wen-Yan, E-mail: yanwenyan88@126.com [School of Software and Communication Engineering, Xiangnan University, Chenzhou 423000 (China); Qiu, Feng; Huang, Jian-Quan; Deng, Hai-Ming; Yao, Min [Xiangnan University-Gospell Joint Laboratory of Microwave Communication Technology, Xiangnan University, Chenzhou 423000 (China)
2016-04-29
A novel phoxonic crystal using the piezoelectric (PMN-PT) and piezomagnetic (CoFe{sub 2}O{sub 4}) superlattices with three types of domains in a unit cell (PPSUC) is present, in which dual microwave photonic and phononic band gaps can be obtained simultaneously. Two categories of phononic band gaps, originating from both the Bragg scattering of acoustic waves in periodic structures at the Brillouin zone boundary and the electromagnetic wave-lattice vibration couplings near the Brillouin zone center, can be observed in the phononic band structures. The general characteristics of the microwave photonic band structures are similar to those of pure piezoelectric or piezomagnetic superlattices, with the major discrepancy being the appearance of nearly dispersionless branches within the microwave photonic band gaps, which show an extremely large group velocity delay. Thus, the properties may also be applied to compact acoustic-microwave devices. - Highlights: • Dual microwave photonic and phononic band gaps can coexist in the PPSUC. • Two categories of phononic band gaps with different mechanism can be obtained. • Nearly dispersionless branches appear in the microwave photonic band gaps.
Band structures in the nematic elastomers phononic crystals
Yang, Shuai; Liu, Ying; Liang, Tianshu
2017-02-01
As one kind of new intelligent materials, nematic elastomers (NEs) represent an exciting physical system that combines the local orientational symmetry breaking and the entropic rubber elasticity, producing a number of unique physical phenomena. In this paper, the potential application of NEs in the band tuning is explored. The band structures in two kinds of NE phononic crystals (PCs) are investigated. Through changing NE intrinsic parameters, the influence of the porosity, director rotation and relaxation on the band structures in NE PCs are analyzed. This work is a meaningful try for application of NEs in acoustic field and proposes a new intelligent strategy in band turning.
Band gap bowing and electron localization of (GaxIn1-x)N
Energy Technology Data Exchange (ETDEWEB)
Lee, Byounghak; Wang, Lin-Wang
2006-05-09
The band gap bowing and the electron localization ofGaxIn1-xN are calculated using both the local density approximation (LDA)and screened-exchange local density functional (sX-LDA) methods. Thecalculated sX-LDA band gaps are in good agreement with the experimentallyobserved values, with errors of -0.26 and 0.09 eV for bulk GaN and InN,respectively. The LDA band gap errors are 1.33 and 0.81 eV for GaN andInN, in order. In contrast to the gap itself, the band gap bowingparameter is found to be very similar in sX-LDA and LDA. We identify thelocalization of hole states in GaxIn1-xN alloys along In-N-In chains. Thepredicted localizationis stronger in sX-LDA.
Vibronic interaction in crystals with the Jahn-Teller centers in the elementary energy bands concept
Directory of Open Access Journals (Sweden)
D.M. Bercha
2015-09-01
Full Text Available The order-disorder type phase transition caused by the vibronic interaction (collective Jahn-Teller effect in a monoclinic CuInP2S6 crystal is analyzed. For this purpose, a trigonal protostructure model of CuInP2S6 is created, through a slight change in the crystal lattice parameters of the CuInP2S6 paraelectric phase. In parallel to the group-theoretical analysis, the DFT-based ab initio band structure calculations of the CuInP2S6 protostructure, para-, and ferriphases are performed. Using the elementary energy bands concept, a part of the band structure from the vicinity of the forbidden energy gap, which is created by the d-electron states of copper has been related with a certain Wyckoff position where the Jahn-Teller's centers are localized. A construction procedure of the vibronic potential energy matrix is generalized for the case of crystal using the elementary energy bands concept and the group theoretical method of invariants. The procedure is illustrated by the creation of the adiabatic potentials of the Γ5-Γ5 vibronic coupling for the protostructure and paraphase of the CuInP2S6 crystal. A structure of the obtained adiabatic potentials is analyzed, followed by conclusions on their transformation under a phase transition and the discussion on the possibility for the spontaneous polarization to arise in this crystal.
Reversible tuning of ZnO optical band gap by plasma treatment
Energy Technology Data Exchange (ETDEWEB)
Lee, Szetsen, E-mail: slee@cycu.edu.tw [Department of Chemistry and Center for Nano-technology, Chung Yuan Christian University, Jhongli, Taoyuan 32023, Taiwan (China); Peng, Jr-Wei [Department of Chemistry and Center for Nano-technology, Chung Yuan Christian University, Jhongli, Taoyuan 32023, Taiwan (China); Ho, Ching-Yuan [Department of Mechanical Engineering, Chung Yuan Christian University, Jhongli, Taoyuan 32023, Taiwan (China)
2011-12-15
Highlights: Black-Right-Pointing-Pointer The ZnO optical band gap blue-shifts with hydrogen plasma treatment. Black-Right-Pointing-Pointer The ZnO optical band gap red-shifts with oxygen plasma treatment. Black-Right-Pointing-Pointer The ZnO optical band gap can be reversibly fine-tuned. - Abstract: Zinc oxide (ZnO) films synthesized by reacting zinc nitrate with hexamethylenetetramine were treated with hydrogen and oxygen plasmas. From UV-visible absorption and optical emission inspection, we have found that the optical band gap of ZnO films blue-shifted with hydrogen plasma treatment, but red-shifted with oxygen plasma treatment. By alternating the treatment sequence of hydrogen and oxygen plasmas, the ZnO optical band gap can be reversibly fine-tuned with the tunable range up to 80 meV. Scanning electron microscopy characterization indicates that the variation of the optical band gap is attributed to the competition between amorphous and crystalline forms of ZnO. The mechanism of reversible optical band gap tuning is discussed.
Band-gap engineering of functional perovskites through quantum confinement and tunneling
DEFF Research Database (Denmark)
Castelli, Ivano Eligio; Pandey, Mohnish; Thygesen, Kristian Sommer
2015-01-01
An optimal band gap that allows for a high solar-to-fuel energy conversion efficiency is one of the key factors to achieve sustainability. We investigate computationally the band gaps and optical spectra of functional perovskites composed of layers of the two cubic perovskite semiconductors BaSnO3...... and BaTaO2N. Starting from an indirect gap of around 3.3 eV for BaSnO3 and a direct gap of 1.8 eV for BaTaO2N, different layerings can be used to design a direct gap of the functional perovskite between 2.3 and 1.2 eV. The variations of the band gap can be understood in terms of quantum confinement...
Carrier concentration dependence of band gap shift in n-type ZnO:Al films
Lu, J. G.; Fujita, S.; Kawaharamura, T.; Nishinaka, H.; Kamada, Y.; Ohshima, T.; Ye, Z. Z.; Zeng, Y. J.; Zhang, Y. Z.; Zhu, L. P.; He, H. P.; Zhao, B. H.
2007-04-01
Al-doped ZnO (AZO) thin films have been prepared by mist chemical vapor deposition and magnetron sputtering. The band gap shift as a function of carrier concentration in n-type zinc oxide (ZnO) was systematically studied considering the available theoretical models. The shift in energy gap, evaluated from optical absorption spectra, did not depend on sample preparations; it was mainly related to the carrier concentrations and so intrinsic to AZO. The optical gap increased with the electron concentration approximately as ne2/3 for ne≤4.2×1019 cm-3, which could be fully interpreted by a modified Burstein-Moss (BM) shift with the nonparabolicity of the conduction band. A sudden decrease in energy gap occurred at 5.4-8.4×1019 cm-3, consistent with the Mott criterion for a semiconductor-metal transition. Above the critical values, the band gap increased again at a different rate, which was presumably due to the competing BM band-filling and band gap renormalization effects, the former inducing a band gap widening and the latter an offsetting narrowing. The band gap narrowing (ΔEBGN) derived from the band gap renormalization effect did not show a good ne1/3 dependence predicated by a weakly interacting electron-gas model, but it was in excellent agreement with a perturbation theory considering different many-body effects. Based on this theory a simple expression, ΔEBGN=Ane1/3+Bne1/4+Cne1/2, was deduced for n-type ZnO, as well as p-type ZnO, with detailed values of A, B, and C coefficients. An empirical relation once proposed for heavily doped Si could also be used to describe well this gap narrowing in AZO.
Compositional dependence of optical band gap and refractive index in lead and bismuth borate glasses
Energy Technology Data Exchange (ETDEWEB)
Mallur, Saisudha B.; Czarnecki, Tyler; Adhikari, Ashish; Babu, Panakkattu K.
2015-08-15
Highlights: • Refractive indices increase with increasing PbO/Bi{sub 2}O{sub 3} content. • Optical band gap arises due to direct forbidden transition. • Optical band gaps decrease with increasing PbO/Bi{sub 2}O{sub 3} content. • New empirical relation between the optical band gap and the refractive index. - Abstract: We prepared a series of lead and bismuth borate glasses by varying PbO/Bi{sub 2}O{sub 3} content and studied refractive index and optical band gap as a function of glass composition. Refractive indices were measured very accurately using a Brewster’s angle set up while the optical band gaps were determined by analyzing the optical absorption edge using the Mott–Davis model. Using the Lorentz–Lorentz method and the effective medium theory, we calculated the refractive indices and then compared them with the measured values. Bismuth borate glasses show better agreement between the calculated values of the refractive index and experimental values. We used a differential method based on Mott–Davis model to obtain the type of transition and optical band gap (E{sub opt}) which in turn was compared with the value of E{sub opt} obtained using the extinction coefficient. Our analysis shows that in both lead and bismuth borate glasses, the optical band gap arises due to direct forbidden transition. With increasing PbO/Bi{sub 2}O{sub 3} content, the absorption edge shifts toward longer wavelengths and the optical band gap decreases. This behavior can be explained in terms of changes to the Pb−O/Bi−O chemical bonds with glass composition. We obtained a new empirical relation between the optical band gap and the refractive index which can be used to accurately determine the electronic oxide polarizability in lead and bismuth oxide glasses.
Photonic bands and defect modes in metallo-dielectric photonic crystal slabs
Zanotto, Simone; Sorba, Lucia; Tredicucci, Alessandro
2016-01-01
Photonic components based on structured metallic elements show great potential for device applications where field enhancement and confinement of the radiation on a subwavelength scale is required. In this paper we report a detailed study of a prototypical metallo-dielectric photonic structure, where features well known in the world of dielectric photonic crystals, like band gaps and defect modes, are exported to the metallic counterpart, with interesting applications to infrared science and technology, as for instance in quantum well infrared photodetectors, narrow-band spectral filters, and tailorable thermal emitters.
X-Band Photonic Band-Gap Accelerator Structure Breakdown Experiment
Energy Technology Data Exchange (ETDEWEB)
Marsh, Roark A.; /MIT /MIT /NIFS, Gifu /JAERI, Kyoto /LLNL, Livermore; Shapiro, Michael A.; Temkin, Richard J.; /MIT; Dolgashev, Valery A.; Laurent, Lisa L.; Lewandowski, James R.; Yeremian, A.Dian; Tantawi, Sami G.; /SLAC
2012-06-11
In order to understand the performance of photonic band-gap (PBG) structures under realistic high gradient, high power, high repetition rate operation, a PBG accelerator structure was designed and tested at X band (11.424 GHz). The structure consisted of a single test cell with matching cells before and after the structure. The design followed principles previously established in testing a series of conventional pillbox structures. The PBG structure was tested at an accelerating gradient of 65 MV/m yielding a breakdown rate of two breakdowns per hour at 60 Hz. An accelerating gradient above 110 MV/m was demonstrated at a higher breakdown rate. Significant pulsed heating occurred on the surface of the inner rods of the PBG structure, with a temperature rise of 85 K estimated when operating in 100 ns pulses at a gradient of 100 MV/m and a surface magnetic field of 890 kA/m. A temperature rise of up to 250 K was estimated for some shots. The iris surfaces, the location of peak electric field, surprisingly had no damage, but the inner rods, the location of the peak magnetic fields and a large temperature rise, had significant damage. Breakdown in accelerator structures is generally understood in terms of electric field effects. These PBG structure results highlight the unexpected role of magnetic fields in breakdown. The hypothesis is presented that the moderate level electric field on the inner rods, about 14 MV/m, is enhanced at small tips and projections caused by pulsed heating, leading to breakdown. Future PBG structures should be built to minimize pulsed surface heating and temperature rise.
Synthesis and Characterization of Small Band-gap Conjugated Polymers - Poly(pyrrolyl methines)
Institute of Scientific and Technical Information of China (English)
无
2002-01-01
A kind of small band-gap conjugated polymers-poly (pyrrolyl methines) and their precursors-(poly pyrrolyl methanes) have been synthesized by a simple method and characterized by 1HNMR, FT-IR, TGA and UV-Vis. These polymers can be dissolved in high polar solvents such as DMSO, DMF or NMP. The results reveals that the band-gap of the synthesized conjugated polymers are in the range of 0.96～1.14 eV and they all belong to the small band-gap polymers. The conductivity of doped products with iodine is in the range of semiconductor.
Band-gap narrowing in heavily doped silicon at 20 and 300 K studied by photoluminescence
Wagner, Joachim
1985-07-01
The band-gap shrinkage in heavily doped n- and p-type silicon is studied by photoluminescence both at low temperatures (20 K) and at room temperature (300 K). A line-shape analysis was performed to determine the indirect band-gap energy from the emission spectra. Within the experimental accuracy the same band-gap shift is observed at room temperature as at low temperature. The present results are compared with experimental data from other optical studies and with theoretical calculations.
Chegel, Raad
2016-06-01
By using the third nearest neighbor modified tight binding (3NN-TB) method, the electronic structure and band gap of BNNRs under transverse electric fields are explored. The band gap of the BNNRs has a decreasing with increasing the intensity of the applied electric field, independent on the ribbon edge types. Furthermore, an analytic model for the dependence of the band gap in armchair and zigzag BNNRs on the electric field is proposed. The reduction of E g is similar for some N a armchair and N z zigzag BNNRs independent of their edges.
Band gaps and cavity modes in dual phononic and photonic strip waveguides
Directory of Open Access Journals (Sweden)
Y. Pennec
2011-12-01
Full Text Available We discuss theoretically the simultaneous existence of phoxonic, i.e., dual phononic and photonic, band gaps in a periodic silicon strip waveguide. The unit-cell of this one-dimensional waveguide contains a hole in the middle and two symmetric stubs on the sides. Indeed, stubs and holes are respectively favorable for creating a phononic and a photonic band gap. Appropriate geometrical parameters allow us to obtain a complete phononic gap together with a photonic gap of a given polarization and symmetry. The insertion of a cavity inside the perfect structure provides simultaneous confinement of acoustic and optical waves suitable to enhance the phonon-photon interaction.
Energy Technology Data Exchange (ETDEWEB)
Lin, Zuohong; Feng, Kai; Tu, Heng; Kang, Lei [Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); University of the Chinese Academy of Sciences, Beijing 100049 (China); Lin, Zheshuai [Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Yao, Jiyong, E-mail: jyao@mail.ipc.ac.cn [Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Wu, Yicheng [Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China)
2014-10-25
Highlights: • Three new chalcohalides: Ba{sub 4}Ge{sub 2}PbS{sub 8}Br{sub 2}, Ba{sub 4}Ge{sub 2}PbSe{sub 8}Br{sub 2} and Ba{sub 4}Ge{sub 2}SnS{sub 8}Br{sub 2} have been synthesized. • The MQ{sub 5}Br octahedra and GeQ{sub 4} tetrahedra form a three-dimensional framework with Ba{sup 2+} in the channels. • Band Gaps and electronic structures of the three compounds were studied. - Abstract: Single crystals of three new chalcohalides: Ba{sub 4}Ge{sub 2}PbS{sub 8}Br{sub 2}, Ba{sub 4}Ge{sub 2}PbSe{sub 8}Br{sub 2} and Ba{sub 4}Ge{sub 2}SnS{sub 8}Br{sub 2} have been synthesized for the first time. These isostructural compounds crystallize in the orthorhombic space group Pnma. In the structure, the tetra-valent Ge atom is tetrahedrally coordinated with four Q (Q = S, Se) atoms, while the bi-valent M atom (M = Pb, Sn) is coordinated with an obviously distorted octahedron of five Q (Q = S, Se) atoms and one Br atom, showing the stereochemical activity of the ns{sup 2} lone pair electron. The MQ{sub 5}Br (M = Sn, Pb; Q = S, Se) distorted octahedra and the GeQ{sub 4} (Q = S, Se) tetrahedra are connected to each other to form a three-dimensional framework with channels occupied by Ba{sup 2+} cations. Based on UV–vis–NIR spectroscopy measurements and the electronic structure calculations, Ba{sub 4}Ge{sub 2}PbS{sub 8}Br{sub 2}, Ba{sub 4}Ge{sub 2}PbSe{sub 8}Br{sub 2} and Ba{sub 4}Ge{sub 2}SnS{sub 8}Br{sub 2} have indirect band gaps of 2.054, 1.952, and 2.066 eV respectively, which are mainly determined by the orbitals from the Ge, M and Q atoms (M = Pb, Sn; Q = S, Se)
Costa, C H O; Vasconcelos, M S
2013-07-17
We employ a microscopic theory to investigate spin wave (magnon) propagation through their dispersion and transmission spectra in magnonic crystals arranged to display deterministic disorder. In this work the quasiperiodic arrangement investigated is the well-known generalized Fibonacci sequence, which is characterized by the σ(p,q) parameter, where p and q are non-zero integers. In order to determine the bulk modes and transmission spectra of the spin waves, the calculations are carried out for the exchange dominated regime within the framework of the Heisenberg model and taking into account the random phase approximation. We have considered magnetic materials that have a ferromagnetic order, and the transfer-matrix treatment is applied to simplify the algebra. The results reveal that spin wave spectra display a rich and interesting magnonic pass- and stop-bands structures, including an almost symmetric band gap distribution around of a mid-gap frequency, which depends on the Fibonacci sequence type.
Effect of stress on optical band gap of ZnO thin films with substrate temperature by spray pyrolysis
Energy Technology Data Exchange (ETDEWEB)
Rao, T. Prasada, E-mail: prasadview@gmail.co [Department of physics, National Institute of Technology, Tiruchirappalli 620015 (India); Kumar, M.C. Santhosh, E-mail: santhoshmc@yahoo.co [Department of physics, National Institute of Technology, Tiruchirappalli 620015 (India); Angayarkanni, S. Anbumozhi; Ashok, M. [Department of physics, National Institute of Technology, Tiruchirappalli 620015 (India)
2009-10-19
Zinc oxide (ZnO) thin films have been deposited with various substrate temperatures by spray pyrolysis method onto glass substrates. The effects of substrate temperature on the crystallization behavior and optical properties of the films have been studied. The evolution of strain and stress effects in ZnO thin films on glass substrate has been studied using X-ray diffraction. The films deposited at low substrate temperature have large compressive stress of 1.77 GPa, which relaxed to 1.47 GPa as the substrate temperature increased to 450 deg. C. Optical parameters such as optical transmittance, reflectance, dielectric constant, refractive index and energy band gap have been studied and discussed with respect to substrate temperature. All films exhibit a transmittance of about 85% in the visible region. It was found that the compressive stress in the films causes a decrease in the optical band gap.
Effect of thermal annealing on structure and optical band gap of amorphous Se72Te25Sb3 thin films
Dwivedi, D. K.; Pathak, H. P.; Kumar, Vipin; Shukla, Nitesh
2014-04-01
Thin films of a-Se72Te25Sb3 were prepared by vacuum evaporation technique in a base pressure of 10-6 Torr on to well cleaned glass substrate. a-Se72Te25Sb3 thin films were annealed at different temperatures below their crystallization temperatures for 2h. The structural analysis of the films has been investigated using X-ray diffraction technique. The optical band gap of as prepared and annealed films as a function of photon energy in the wavelength range 400-1100 nm has been studied. It has been found that the optical band gap decreases with increasing annealing temperatures in the present system.
Costa, C. H. O.; Vasconcelos, M. S.
2013-07-01
We employ a microscopic theory to investigate spin wave (magnon) propagation through their dispersion and transmission spectra in magnonic crystals arranged to display deterministic disorder. In this work the quasiperiodic arrangement investigated is the well-known generalized Fibonacci sequence, which is characterized by the σ(p,q) parameter, where p and q are non-zero integers. In order to determine the bulk modes and transmission spectra of the spin waves, the calculations are carried out for the exchange dominated regime within the framework of the Heisenberg model and taking into account the random phase approximation. We have considered magnetic materials that have a ferromagnetic order, and the transfer-matrix treatment is applied to simplify the algebra. The results reveal that spin wave spectra display a rich and interesting magnonic pass- and stop-bands structures, including an almost symmetric band gap distribution around of a mid-gap frequency, which depends on the Fibonacci sequence type.
Band structures and localization properties of aperiodic layered phononic crystals
Energy Technology Data Exchange (ETDEWEB)
Yan Zhizhong, E-mail: zzyan@bit.edu.cn [Department of Applied Mathematics, Beijing Institute of Technology, Beijing 100081 (China); Zhang Chuanzeng [Department of Civil Engineering, University of Siegen, D-57078 Siegen (Germany)
2012-03-15
The band structures and localization properties of in-plane elastic waves with coupling of longitudinal and transverse modes oblique propagating in aperiodic phononic crystals based on Thue-Morse and Rudin-Shapiro sequences are studied. Using transfer matrix method, the concept of the localization factor is introduced and the correctness is testified through the Rytov dispersion relation. For comparison, the perfect periodic structure and the quasi-periodic Fibonacci system are also considered. In addition, the influences of the random disorder, local resonance, translational and/or mirror symmetries on the band structures of the aperiodic phononic crystals are analyzed in this paper.
Band structures and localization properties of aperiodic layered phononic crystals
Yan, Zhi-Zhong; Zhang, Chuanzeng
2012-03-01
The band structures and localization properties of in-plane elastic waves with coupling of longitudinal and transverse modes oblique propagating in aperiodic phononic crystals based on Thue-Morse and Rudin-Shapiro sequences are studied. Using transfer matrix method, the concept of the localization factor is introduced and the correctness is testified through the Rytov dispersion relation. For comparison, the perfect periodic structure and the quasi-periodic Fibonacci system are also considered. In addition, the influences of the random disorder, local resonance, translational and/or mirror symmetries on the band structures of the aperiodic phononic crystals are analyzed in this paper.
Systematic analysis of the unique band gap modulation of mixed halide perovskites.
Kim, Jongseob; Lee, Sung-Hoon; Chung, Choong-Heui; Hong, Ki-Ha
2016-02-14
Solar cells based on organic-inorganic hybrid metal halide perovskites have been proven to be one of the most promising candidates for the next generation thin film photovoltaic cells. Mixing Br or Cl into I-based perovskites has been frequently tried to enhance the cell efficiency and stability. One of the advantages of mixed halides is the modulation of band gap by controlling the composition of the incorporated halides. However, the reported band gap transition behavior has not been resolved yet. Here a theoretical model is presented to understand the electronic structure variation of metal mixed-halide perovskites through hybrid density functional theory. Comparative calculations in this work suggest that the band gap correction including spin-orbit interaction is essential to describe the band gap changes of mixed halides. In our model, both the lattice variation and the orbital interactions between metal and halides play key roles to determine band gap changes and band alignments of mixed halides. It is also presented that the band gap of mixed halide thin films can be significantly affected by the distribution of halide composition.
Energy band gap and optical transition of metal ion modified double crossover DNA lattices.
Dugasani, Sreekantha Reddy; Ha, Taewoo; Gnapareddy, Bramaramba; Choi, Kyujin; Lee, Junwye; Kim, Byeonghoon; Kim, Jae Hoon; Park, Sung Ha
2014-10-22
We report on the energy band gap and optical transition of a series of divalent metal ion (Cu(2+), Ni(2+), Zn(2+), and Co(2+)) modified DNA (M-DNA) double crossover (DX) lattices fabricated on fused silica by the substrate-assisted growth (SAG) method. We demonstrate how the degree of coverage of the DX lattices is influenced by the DX monomer concentration and also analyze the band gaps of the M-DNA lattices. The energy band gap of the M-DNA, between the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), ranges from 4.67 to 4.98 eV as judged by optical transitions. Relative to the band gap of a pristine DNA molecule (4.69 eV), the band gap of the M-DNA lattices increases with metal ion doping up to a critical concentration and then decreases with further doping. Interestingly, except for the case of Ni(2+), the onset of the second absorption band shifts to a lower energy until a critical concentration and then shifts to a higher energy with further increasing the metal ion concentration, which is consistent with the evolution of electrical transport characteristics. Our results show that controllable metal ion doping is an effective method to tune the band gap energy of DNA-based nanostructures.
Residual stress dependant anisotropic band gap of various (hkl) oriented BaI2 films
Kumar, Pradeep; Gulia, Vikash; Vedeshwar, Agnikumar G.
2013-11-01
The thermally evaporated layer structured BaI2 grows in various completely preferred (hkl) film orientations with different growth parameters like film thickness, deposition rate, substrate temperature, etc. which were characterized by structural, morphological, and optical absorption measurements. Structural analysis reveals the strain in the films and the optical absorption shows a direct type band gap. The varying band gaps of these films were found to scale linearly with their strain. The elastic moduli and other constants were also calculated using Density Functional Theory (DFT) formalism implemented in WIEN2K code for converting the strain into residual stress. Films of different six (hkl) orientations show stress free anisotropic band gaps (2.48-3.43 eV) and both positive and negative pressure coefficients. The negative and positive pressure coefficients of band gap are attributed to the strain in I-I (or Ba-Ba or both) and Ba-I distances along [hkl], respectively. The calculated band gaps are also compared with those experimentally determined. The average pressure coefficient of band gap of all six orientations (-0.071 eV/GPa) found to be significantly higher than that calculated (-0.047 eV/GPa) by volumetric pressure dependence. Various these issues have been discussed with consistent arguments. The electron effective mass me*=0.66m0 and the hole effective mass mh*=0.53m0 have been determined from the calculated band structure.
Electronic Bands Behaviour at Sinusoidal Potential Presence of Incommensurate Crystals
Vlokh R.; Vlokh O.; Lukiyanets B.
2004-01-01
On the basis of solving the Schrodinger and Mathieu equations, for the case of crystal field perturbed by one-dimensional sinusoidal potential of the modulated phase in uniaxial ferroelectrics, it has been shown that the positions of electronic levels are sensitive to the ratio of periods of the crystal field and the perturbation potential. Considering the energy states as prototypes of bands normalized by perturbation, one can come to the conclusion that the level of the states is the same a...
Debnath, C.; Kar, S.; Verma, S.; Bartwal, K. S.
2014-11-01
The structural and optical characteristics of nearly stoichiometric lithium niobate, LiNbO3 nanoparticles have been studied. The results are very different compared to the bulk LiNbO3 single crystals. The nanoparticles were synthesized by citrate gel method and the phase was confirmed by powder X-ray diffraction. The size and size distribution of the nanoparticles were obtained by XRD, SEM, TEM and DLS experiments. The particles were in the range of 50-200 nm and most of the particles are about 100 nm of size. The lattice parameters obtained from selected area electron diffraction are aH = 5.213 Å and cH = 14.026 Å for hexagonal system which are slightly larger than the other reported values (JCPDS). The optical properties were obtained from optical absorption spectroscopy in UV-vis.-NIR and IR (FTIR) range, the electronic band gap structure were determined from the fundamental absorption edge in the UV region. The indirect band gap was of 4.78 eV where as the direct gap was of 6.0 eV which are much larger than the other experimental values. The absorption features in the UV range indicate the discrete nature of conduction band and the allowed energy levels in the forbidden gap appeared due to surface defects.
Calculation of effective band gap narrowing in heavily-doped and compensated silicon
Polsky, B. S.; Rimshans, J. S.
1991-06-01
The effective band gap narrowing in heavily-doped and compensated silicon for different values of impurity concentration is calculated within the semiclassical approximation. The calculated and known measured data are compared.
Mondal, Rajib
2009-01-01
Removing the adjacent thiophene groups around the acceptor core in low band gap polymers significantly enhances solar cell efficiency through increasing the optical absorption and raising the ionization potential of the polymer. © 2009 The Royal Society of Chemistry.
Vibration band-gap properties of three-dimensional Kagome lattices using the spectral element method
Wu, Zhi-Jing; Li, Feng-Ming; Zhang, Chuanzeng
2015-04-01
The spectral element method (SEM) is extended to investigate the vibration band-gap properties of three-dimensional (3D) Kagome lattices. The dynamic stiffness matrix of the 3D element which contains bending, tensional and torsional components is derived. The spectral equations of motion of the whole 3D Kagome lattice are then established. Comparing with frequency-domain solutions calculated by the finite element method (FEM), the accuracy and the feasibility of the SEM solutions are verified. It can be shown that the SEM is suitable for analyzing the vibration band-gap properties. Due to the band-gap characteristics, the periodic 3D Kagome lattice has the performance of vibration isolation. The influences of the structural and material parameters on the vibration band-gaps are discussed and a new type of 3D Kagome lattice is designed to obtain the improved vibration isolation capability.
Shape optimization of phononic band gap structures using the homogenization approach
Vondřejc, Jaroslav; Heczko, Jan
2016-01-01
The paper deals with optimization of the acoustic band gaps computed using the homogenized model of strongly heterogeneous elastic composite which is constituted by soft inclusions periodically distributed in stiff elastic matrix. We employ the homogenized model of such medium to compute intervals - band gaps - of the incident wave frequencies for which acoustic waves cannot propagate. It was demonstrated that the band gaps distribution can be influenced by changing the shape of inclusions. Therefore, we deal with the shape optimization problem to maximize low-frequency band gaps; their bounds are determined by analyzing the effective mass tensor of the homogenized medium. Analytic transformation formulas are derived which describe dispersion effects of resizing the inclusions. The core of the problem lies in sensitivity of the eigenvalue problem associated with the microstructure. Computational sensitivity analysis is developed, which allows for efficient using of the gradient based optimization methods. Num...
Band gap narrowing models tested on low recombination phosphorus laser doped silicon
Dahlinger, Morris; Carstens, Kai
2016-10-01
This manuscript discusses bandgap narrowing models for highly phosphorus doped silicon. We simulate the recombination current pre-factor J0,phos in PC1Dmod 6.2 of measured doping profiles and apply the theoretical band gap narrowing model of Schenk [J. Appl. Phys. 84, 3684 (1998)] and an empirical band gap narrowing model of Yan and Cuevas [J. Appl. Phys. 114, 044508 (2013)]. The recombination current pre-factor of unpassivated and passivated samples measured by the photo conductance measurement and simulated J0,phos agrees well, when the band gap narrowing model of Yan and Cuevas is applied. With the band gap narrowing model of Schenk, the simulation cannot reproduce the measured J0,phos. Furthermore, the recombination current pre-factor of our phosphorus laser doped silicon samples are comparable with furnace diffused samples. There is no indication of recombination active defects, thus no laser induced defects in the diffused volume.
Band-gap narrowing in heavily doped silicon: A comparison of optical and electrical data
Wagner, Joachim; del Alamo, Jesús A.
1988-01-01
The band-gap narrowing in heavily doped silicon has been studied by optical techniques—namely, photoluminescence and photoluminescence excitation spectroscopy—and by electrical measurements on bipolar transistors. The optical experiments give a consistent set of data for the band-gap narrowing in n- and p-type material at low temperatures as well as at room temperature. A good agreement is found between the optical and electrical data removing the discrepancies existing so far in the literature.
Loss properties of all-solid photonic band gap fibers with an array of rings
Institute of Scientific and Technical Information of China (English)
GENG You-fu; LI Xue-jin; TAN Xiao-ling; YAO Jian-quan
2010-01-01
@@ The confinement loss and bend loss properties of all-solid photonic band gap fibers with an array of rings doped with highindex material are investigated.The calculated results show that for a specific structure,the confinement loss and the critical bend radius are reduced simultaneously in some band gaps by increasing the inner diameter of ring,which provides a useful guide and a theoretical basis for designing large mode area fibers with low loss.
Variable band-gap semiconductors as the basis of new solar cells
Energy Technology Data Exchange (ETDEWEB)
Morales-Acevedo, Arturo [Centro de Investigacion y de Estudios Avanzados del IPN, Electrical Engineering Department, Avenida IPN No. 2508, 07360 Mexico, DF (Mexico)
2009-09-15
Some basic concepts related to variable band-gap absorbing semiconductors in solar cell structures, such as the associated quasi-electric field, will be discussed. The effects of this quasi-electric field upon the minority carrier drift-diffusion length and the back surface recombination velocity may induce a larger generated carrier collection at the junction with the corresponding increase of the illumination current density. It will also be shown that an additional improvement of the open-circuit voltage is possible when the band-gap is reduced within the space charge region so that the dark saturation current density is reduced there. Our estimation is that in the case of a solar cell where the band-gap is changed about 0.5 eV within the space charge region, an increase of the open-circuit voltage around 115 mV will be observed with respect to the single minimum band-gap absorbing material case. A similar band-gap variation in the bulk of the material will cause an increase of the minority carrier drift-diffusion length by a factor of 10 with respect to the single band-gap material. Therefore, based on these physical concepts, two possible structures with variable band-gap layers are proposed in order to have higher efficiencies than for cells without any band-gap grading. It will be shown that these concepts can be applied to II-VI, III-V chalcopyrite and even amorphous semiconductor solar cells. (author)
Study on band gap structure of Fibonacci quantum superlattices by using the transfer matrix method
Ferrando, V.; Castro-Palacio, J. C.; Marí, B.; Monsoriu, J. A.
2014-02-01
The scattering properties of particles in a one-dimensional Fibonacci sequence based potential have been analyzed by means of the Transfer Matrix Method. The electronic band gaps are examined comparatively with those obtained using the corresponding periodic potentials. The reflection coefficient shows self-similar properties for the Fibonacci superlattices. Moreover, by using the generalized Bragg's condition, the band gaps positions are derived from the golden mean involved in the design of the superlattice structure.
Wide band gap tunability in complex transition metal oxides by site-specific substitution
Choi, Woo Seok; Chisholm, Matthew F.; Singh, David J.; Choi, Taekjib; Jellison Jr, Gerald E.; Lee, Ho Nyung
2012-01-01
Fabricating complex transition metal oxides with a tuneable band gap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the Mott insulator lanthanum cobaltite, its band gap can be narrowed as much as one electron volt, while remaining strongly ferroelectric. We find that when a specific site in the host material is preferentially substituted, ...
Band gap formation and control in coupled periodic ferromagnetic structures
Morozova, M. A.; Sharaevskaya, A. Yu.; Sadovnikov, A. V.; Grishin, S. V.; Romanenko, D. V.; Beginin, E. N.; Sharaevskii, Yu. P.; Nikitov, S. A.
2016-12-01
We demonstrate theoretically and experimentally the formation of additional bandgaps in the spectrum of spin waves in coupled magnonic crystals. We present the analytical model, which reveals the mechanism of bandgaps formation in coupled structures. In particular, the formation of one, two, or three bandgaps in the region of the first Bragg resonance is demonstrated and control of its characteristics by the variation of the complex coupling coefficient between magnonic crystals is shown. The spatially-resolved Brillouin light scattering spectroscopy and microwave measurements demonstrate the bandgap splitting in the spin-wave spectrum. The main advantage of proposed coupled structure, as compared to the conventional magnonic crystal, is the tunability of multiple bandgaps in the spin-wave spectrum, which enables potential applications in the frequency selective magnonic devices.
Robust room temperature ferromagnetism and band gap tuning in nonmagnetic Mg doped ZnO films
Quan, Zhiyong; Liu, Xia; Qi, Yan; Song, Zhilin; Qi, Shifei; Zhou, Guowei; Xu, Xiaohong
2017-03-01
Mg doped ZnO films with hexagonal wurtzite structure were deposited on c-cut sapphire Al2O3 substrates by pulsed laser deposition. Both room temperature ferromagnetism and band gap of the films simultaneously tuned by the concentration of oxygen vacancies were performed. Our results further reveal that the singly occupied oxygen vacancies should be responsible for the room temperature ferromagnetism and band gap narrowing. Singly occupied oxygen vacancies having the localized magnetic moments form bound magnetic polarons, which results in a long-range ferromagnetic ordering due to Mg doping. Moreover, band gap narrowing of the films is probably due to the formation of impurity band in the vicinity of valence band, originating from singly occupied oxygen vacancies. These results may build a bridge to understand the relationship between the magnetic and optical properties in oxide semiconductor, and are promising to integrate multiple functions in one system.
Influence of process parameters on band gap of AI-doped ZnO film
Institute of Scientific and Technical Information of China (English)
Diqiu HUANG; Xiangbin ZENG; Yajuan ZHENG; Xiaojin WANG; Yanyan YANG
2013-01-01
This paper presents the influence of process parameters, such as argon （Ar） flow rate, sputtering power and substrate temperature on the band gap of Al-doped ZnO film, Al-doped ZnO thin films were fabricated by radio frequency （RF） magnetron sputtering technology and deposited on polyimide and glass substrates. Under different Ar flow rates varied from 30 to 70 sccm, the band gap of thin films were changed from 3.56 to 3.67 eV. As sputtering power ranged from 125 to 200 W, the band gap was varied from 3.28 to 3.82 eV; the band gap was between 3.41 and 3.88 eV as substrate temperature increases from 150℃ to 300℃. Furthermore, the correlation between carrier concentration and band gap was investigated by HALL. These results demonstrate that the band gap of the Al-doped ZnO thin film can be adjusted by changing the Ar flow rate, sputtering power and substrate temperature, which can improve the performance of semiconductor devices related to Al-doped ZnO thin film.
Origins of electronic band gap reduction in Cr/N codoped TiO2.
Parks Cheney, C; Vilmercati, P; Martin, E W; Chiodi, M; Gavioli, L; Regmi, M; Eres, G; Callcott, T A; Weitering, H H; Mannella, N
2014-01-24
Recent studies indicated that noncompensated cation-anion codoping of wide-band-gap oxide semiconductors such as anatase TiO2 significantly reduces the optical band gap and thus strongly enhances the absorption of visible light [W. Zhu et al., Phys. Rev. Lett. 103, 226401 (2009)]. We used soft x-ray spectroscopy to fully determine the location and nature of the impurity levels responsible for the extraordinarily large (∼1 eV) band gap reduction of noncompensated codoped rutile TiO2. It is shown that Cr/N codoping strongly enhances the substitutional N content, compared to single element doping. The band gap reduction is due to the formation of Cr 3d3 levels in the lower half of the gap while the conduction band minimum is comprised of localized Cr 3d and delocalized N 2p states. Band gap reduction and carrier delocalization are critical elements for efficient light-to-current conversion in oxide semiconductors. These findings thus raise the prospect of using codoped oxide semiconductors with specifically engineered electronic properties in a variety of photovoltaic and photocatalytic applications.
Optical band gap tuning of Sb-Se thin films for xerographic based applications
Kaur, Ramandeep; Singh, Palwinder; Singh, Kulwinder; Kumar, Akshay; Thakur, Anup
2016-10-01
In the present paper we have studied the effect of Sb addition on the optical band gap tuning of thermally evaporated SbxSe100-x (x = 0, 5, 20, 50 and 60) thin films. The structural investigations revealed that all thin films were amorphous in nature. Transmission spectrum was taken in the range 400-2500 nm shows that all films are highly transparent in the near infrared region. The fundamental absorption edge shifts towards longer wavelength with Sb incorporation. The optical band gap decreases with addition of antimony in a-Se thin films. A good correlation has been drawn between experimentally estimated and theoretically calculated optical band gap. The decrease in optical band gap of thin films has been explained using chemical bond approach and density of states model. Decrease in optical band gap with Sb addition increases the concentration of electron deep traps which increases the X-ray sensitivity of Sb-Se thin films. Thus by tuning the optical band gap of Sb-Se alloy, it could be utilized for xerographic based applications.
The Miscibility of PCBM in Low Band-Gap Conjugated Polymers in Organic Photovoltaics
Chen, Huipeng; You, Wei; Peet, Jeff; Azoulay, Jason; Bazan, Guillermo; Dadmun, Mark
2012-02-01
Understanding the morphology of the photoactive layer in organic photovoltaics (OPVs) is essential to optimizing conjugated polymer-based solar cells to meet the targeted efficiency of 10%. The miscibility and interdiffusion of components are among the key elements that impact the development of morphology and structure in OPV active layers. This study uses neutron reflectivity to correlate the structure of low band gap polymers to their miscibility with PCBM. Several low band gap polymers that exhibit power conversion efficiencies exceeding 7%, including PBnDT-DTffBT were examined. The intermixing of low band-gap polymer and PCBM bilayers was monitored by neutron reflectivity before and after thermal annealing, providing quantification of the miscibility and interdiffusion of PCBM within the low band gap polymer layer. These results indicate that the miscibility of PCBM ranges from 3% to 26% with the low band-gap polymers studied. The correlation between low band gap polymer structure and miscibility of PCBM will also be discussed.
Institute of Scientific and Technical Information of China (English)
乌日娜; 闫彬; 王彦华; 徐送宁; 闫秀生; 岱钦
2011-01-01
制作了SiO2/TiO2多层膜结构一维光子晶体,研究了其光子禁带特性.通过测量红外透射谱,分析了入射线偏振方向、入射角度以及引入缺陷层对光子禁带的影响.随着入射角度的增大,在TE模式和TM模式线偏振光下,光子禁带边沿产生蓝移现象.引入TEB30A型向列相液晶缺陷后,光子禁带中在波长约为l810nm(TE模式)和182lam(TM模式)处出现了透射峰.利用传输矩阵理论,模拟计算了光子晶体透射谱,并对实验结果进行了深入分析.无缺陷时,随着入射角增大,薄膜的光学厚度减小,光子禁带边沿蓝移.引入液晶缺陷后,光子禁带中产生特定的缺陷态,和缺陷态频率相吻合的光子被局域在缺陷位置,禁带中出现透射峰.由于两种模式线偏振光下的液晶层光学厚度不同,透射峰位置也不同.%One-dimensional (1D) multilayer photonic crystal (PC) with SiO2/TiO2 was designed and fabricated.The characteristics of photonic band gap (PBG) were investigated.The influences of the linearly polarized light, the incident angle and the introduced defect layers on the PBG were analyzed by measuring the infrared transmission spectra.The edge of PBG shifted to shorter wavelength when the incident angles of linearly polarized light of TE mode and TM mode increased.Transmission peaks appeared in photonic band gap and their center wavelengths were approximately 1810 nm(TE) and 1821 nm (TM) if defect layer of nematic liquid crystal TEB30A was introduced.The transmission spectrtun of PC was simulated with the transfer matrix theory.The experimental results show that when there is no defect layer, the increasing of the incident angle brings a decreasing of optical thickness of the film, which results in a blue shift of the PBG edge.A specific defect state is produced in the PBG when introducing the liquid crystal defect layers.The photons which have the same frequency with the defect states are localized in the defect position
THz Photonic Band-Gap Prisms Fabricated by Fiber Drawing
DEFF Research Database (Denmark)
Busch, Stefan F.; Xu, Lipeng; Stecher, Matthias;
2012-01-01
We suggest a novel form of polymeric based 3D photonic crystal prisms for THz frequencies which could be fabricated using a standard fiber drawing technique. The structures are modeled and designed using a finite element analyzing technique. Using this simulation software we theoretically study...
Towards a complete photonic band gap in the visible
Velikov, K.P.
2002-01-01
The first part of the thesis describes the fabrication and the characterization of face-centered-cubic (fcc) photonic crystals (PCs) of dielectric (core-shell) spheres in a low-dielectric host (air). We demonstrate the synthesis and optical characterization of the PC's building blocks: well-defined
Abdel Rafea, M.; Roushdy, N.
2009-01-01
Amorphous copper oxide films were deposited using the SILAR technique. Both Cu2O and CuO crystallographic phases exist in deposited and annealed films. Crystallization and growth processes by annealing at temperatures up to 823 K form grains with nano- and micro-spherical shapes. The calculated crystallite size from the XRD measurement was found to be in the range 14-21 nm while nano-spheres in the diameter range 50-100 nm were observed by SEM micrographs. The band gap for amorphous film was found to be 2.3 eV which increased slowly to 2.4 eV by annealing the film at 373 K. This was explained by defect redistribution in amorphous films. Annealing in the temperature range 373-673 K decreased the band gap gradually to 1.85 eV. The decrease of the band gap with annealing temperature in the range 373-673 K agrees well with the Brus model of the energy gap confinement effect in nanostructured semiconducting materials. Annealing in the temperature range 673-823 K decreases the band gap slowly to 1.7 eV due to the smaller contribution of the confinement effect. Below 573 K, Cu2O is the most probable crystalline phase in the film, while Cu2O and CuO crystalline phases may coexist at annealing temperatures above 573 K due to further oxidation of Cu2O. A wider transmittance spectral window in the visible region was obtained by controlling the annealing conditions of the amorphous copper oxide film and its applicability to the window layer of solar cell was suggested.
Energy Technology Data Exchange (ETDEWEB)
Abdel Rafea, M; Roushdy, N [Electronic Materials Department, Advanced Technologies and New Materials Institute, Mubarak City for Scientific Research and Technology Applications, PO Box 21934, New Borg El-Arab City, Alexandria (Egypt)], E-mail: m.abdelrafea@mucsat.sci.eg
2009-01-07
Amorphous copper oxide films were deposited using the SILAR technique. Both Cu{sub 2}O and CuO crystallographic phases exist in deposited and annealed films. Crystallization and growth processes by annealing at temperatures up to 823 K form grains with nano- and micro-spherical shapes. The calculated crystallite size from the XRD measurement was found to be in the range 14-21 nm while nano-spheres in the diameter range 50-100 nm were observed by SEM micrographs. The band gap for amorphous film was found to be 2.3 eV which increased slowly to 2.4 eV by annealing the film at 373 K. This was explained by defect redistribution in amorphous films. Annealing in the temperature range 373-673 K decreased the band gap gradually to 1.85 eV. The decrease of the band gap with annealing temperature in the range 373-673 K agrees well with the Brus model of the energy gap confinement effect in nanostructured semiconducting materials. Annealing in the temperature range 673-823 K decreases the band gap slowly to 1.7 eV due to the smaller contribution of the confinement effect. Below 573 K, Cu{sub 2}O is the most probable crystalline phase in the film, while Cu{sub 2}O and CuO crystalline phases may coexist at annealing temperatures above 573 K due to further oxidation of Cu{sub 2}O. A wider transmittance spectral window in the visible region was obtained by controlling the annealing conditions of the amorphous copper oxide film and its applicability to the window layer of solar cell was suggested.
Analysis of photonic band-gap (PBG) structures using the FDTD method
DEFF Research Database (Denmark)
Tong, M.S.; Cheng, M.; Lu, Y.L.
2004-01-01
In this paper, a number of photonic band-gap (PBG) structures, which are formed by periodic circuit elements printed oil transmission-line circuits, are studied by using a well-known numerical method, the finite-difference time-domain (FDTD) method. The results validate the band-stop filter...
DEFF Research Database (Denmark)
Gorczyca, I.; Kamińska, A.; Staszczak, G.;
2010-01-01
The pressure-induced changes in the electronic band structures of In-containing nitride alloys, InxGa1-xN and InxAl1-xN are examined experimentally as well as by ab initio calculations. It is found that the band gap pressure coefficients, dEg/dp, exhibit very large bowing with x, and calculations...
Mind the gap: Exact quantum dynamics in photonic crystals
Prior, Javier; Chin, Alex W; Huelga, Susana F; Plenio, Martin B
2012-01-01
Employing a recently developed numerically exact method for the description of arbitrary system-environment interactions, we analyze the full dynamics of an atomic system coupled to an environment with a gapped spectral density. This is a situation encountered for example for the radiation field in a photonic crystal and whose analysis has been so far been confined to limiting cases due to the lack of suitable numerical techniques. We show that both atomic population and coherences' dynamics can drastically deviate from the results predicted when using the rotating wave approximation, particularly in the strong coupling regime. Experimental conditions required to observe these corrections are also discussed.
Design Analysis of An Electromagnetic Band Gap Microstrip Antenna
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M. S. Alam
2011-01-01
Full Text Available Problem statement: Wideband compact antenna is highly demandable due to the dynamic development in the wireless technology. Approach: A simple, compact EBG microstrip antenna is proposed in this study that covers a wideband of 250 GHz and the design is conformal with the 2.45 GHz ISM band (WLAN, IEEE 802.11b and g/Bluetooth/RFID applications. Results: A 6×6 array of square unit cell formed the EBG structure which is incorporated with the radiating patch to enhance the antenna performances. This design achieved an impedance bandwidth of 10.14% (2.34-2.59 GHz at -10 dB return loss and VSWR ≤ 2. Simulated radiation pattern is almost omnideirectional. Conclusion/Recommendations: The simulated results prove the compatibility of the EBG antenna with the 2.45 GHz ISM band applications. Further enhancement of the antenna performance with improved design is under consideration.
Pressure dependence of the band-gap energy in BiTeI
Güler-Kılıç, Sümeyra; Kılıç, Çetin
2016-01-01
The evolution of the electronic structure of BiTeI, a layered semiconductor with a van der Waals gap, under compression is studied by employing semilocal and dispersion-corrected density-functional calculations. Comparative analysis of the results of these calculations shows that the band-gap energy of BiTeI decreases till it attains a minimum value of zero at a critical pressure, after which it increases again. The critical pressure corresponding to the closure of the band gap is calculated,...
Robust band gap and half-metallicity in graphene with triangular perforations
Gregersen, Søren Schou; Power, Stephen R.; Jauho, Antti-Pekka
2016-06-01
Ideal graphene antidot lattices are predicted to show promising band gap behavior (i.e., EG≃500 meV) under carefully specified conditions. However, for the structures studied so far this behavior is critically dependent on superlattice geometry and is not robust against experimentally realistic disorders. Here we study a rectangular array of triangular antidots with zigzag edge geometries and show that their band gap behavior qualitatively differs from the standard behavior which is exhibited, e.g., by rectangular arrays of armchair-edged triangles. In the spin unpolarized case, zigzag-edged antidots give rise to large band gaps compared to armchair-edged antidots, irrespective of the rules which govern the existence of gaps in armchair-edged antidot lattices. In addition the zigzag-edged antidots appear more robust than armchair-edged antidots in the presence of geometrical disorder. The inclusion of spin polarization within a mean-field Hubbard approach gives rise to a large overall magnetic moment at each antidot due to the sublattice imbalance imposed by the triangular geometry. Half-metallic behavior arises from the formation of spin-split dispersive states near the Fermi energy, reducing the band gaps compared to the unpolarized case. This behavior is also found to be robust in the presence of disorder. Our results highlight the possibilities of using triangular perforations in graphene to open electronic band gaps in systems with experimentally realistic levels of disorder, and furthermore, of exploiting the strong spin dependence of the system for spintronic applications.
Synergistic effects on band gap-narrowing in titania by codoping from first-principles calculations
2010-01-01
The large intrinsic band gap in TiO2 has hindered severely its potential application for visible-light irradiation. In this study, we have used a passivated approach to modify the band edges of anatase-TiO2 by codoping of X (N, C) with transition metals (TM=W, Re, Os) to extend the absorption edge to longer visible-light wavelengths. It was found that all the codoped systems can narrow the band gap significantly; in particular, (N+W)-codoped systems could serve as remarkably better photocatal...
Band-gap narrowing in the space-charge region of heavily doped silicon diodes
Lowney, Jeremiah R.
1985-02-01
The densities of states of the valence and conduction bands have been calculated in the space-charge region of a heavily doped linearly graded p- n junction silicon diode. Both the donor and acceptor densities were chosen to be equal to 6.2 × 10 18 cm -3. The results showed the emergence of band tails which penetrated deeply into the energy gap and accounted for the band-gap narrowing observed in such a diode by analysis of capacitance vs voltage measurements of the built-in voltage.
Ansari, Sajid Ali; Khan, Mohammad Mansoob; Kalathil, Shafeer; Nisar, Ambreen; Lee, Jintae; Cho, Moo Hwan
2013-10-07
Band gap narrowing is important and advantageous for potential visible light photocatalytic applications involving metal oxide nanostructures. This paper reports a simple biogenic approach for the promotion of oxygen vacancies in pure zinc oxide (p-ZnO) nanostructures using an electrochemically active biofilm (EAB), which is different from traditional techniques for narrowing the band gap of nanomaterials. The novel protocol improved the visible photocatalytic activity of modified ZnO (m-ZnO) nanostructures through the promotion of oxygen vacancies, which resulted in band gap narrowing of the ZnO nanostructure (Eg = 3.05 eV) without dopants. X-ray diffraction, UV-visible diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, electron paramagnetic resonance spectroscopy, Raman spectroscopy, photoluminescence spectroscopy and high resolution transmission electron microscopy confirmed the oxygen vacancy and band gap narrowing of m-ZnO. m-ZnO enhanced the visible light catalytic activity for the degradation of different classes of dyes and 4-nitrophenol compared to p-ZnO, which confirmed the band gap narrowing because of oxygen defects. This study shed light on the modification of metal oxide nanostructures by EAB with a controlled band structure.
Modifying the band gap and optical properties of Germanium nanowires by surface termination
Legesse, Merid; Fagas, Giorgos; Nolan, Michael
2017-02-01
Semiconductor nanowires, based on silicon (Si) or germanium (Ge) are leading candidates for many ICT applications, including next generation transistors, optoelectronics, gas and biosensing and photovoltaics. Key to these applications is the possibility to tune the band gap by changing the diameter of the nanowire. Ge nanowires of different diameter have been studied with H termination, but, using ideas from chemistry, changing the surface terminating group can be used to modulate the band gap. In this paper we apply the generalised gradient approximation of density functional theory (GGA-DFT) and hybrid DFT to study the effect of diameter and surface termination using -H, -NH2 and -OH groups on the band gap of (001), (110) and (111) oriented germanium nanowires. We show that the surface terminating group allows both the magnitude and the nature of the band gap to be changed. We further show that the absorption edge shifts to longer wavelength with the -NH2 and -OH terminations compared to the -H termination and we trace the origin of this effect to valence band modifications upon modifying the nanowire with -NH2 or -OH. These results show that it is possible to tune the band gap of small diameter Ge nanowires over a range of ca. 1.1 eV by simple surface chemistry.
Low frequency band gaps below 10 Hz in radial flexible elastic metamaterial plate
Gao, Nansha; Hou, Hong; Wu, Jiu Hui; Cheng, Baozhu
2016-11-01
This paper presents the low frequency acoustic properties of a new proposed elastic metamaterial, which is arranged in the axial coordinate. The band structures, transmission spectra, and eigenmode displacement fields of this metamaterial are different from previous elastic metamaterial structures. Numerical calculation results show that the first order band gap of the radial flexible elastic metamaterial plate is below 10 Hz. A multiple-vibration coupling mechanism is proposed to explain the low frequency band gaps. By changing the geometrical dimensions h 1, h 2, b 1, and b 1 of the centre part, the location and width of the low frequency band gaps can be varied easily. The effects of density and Young’s modulus are also discussed in detail. In summary, the radial flexible elastic metamaterial plate can restrain low frequency vibration, owing to which it can potentially be used to protect infrasound, generate filters, and design acoustic devices.
Kong, Lingping; Liu, Gang; Gong, Jue; Hu, Qingyang; Schaller, Richard D; Dera, Przemyslaw; Zhang, Dongzhou; Liu, Zhenxian; Yang, Wenge; Zhu, Kai; Tang, Yuzhao; Wang, Chuanyi; Wei, Su-Huai; Xu, Tao; Mao, Ho-Kwang
2016-08-09
The organic-inorganic hybrid lead trihalide perovskites have been emerging as the most attractive photovoltaic materials. As regulated by Shockley-Queisser theory, a formidable materials science challenge for improvement to the next level requires further band-gap narrowing for broader absorption in solar spectrum, while retaining or even synergistically prolonging the carrier lifetime, a critical factor responsible for attaining the near-band-gap photovoltage. Herein, by applying controllable hydrostatic pressure, we have achieved unprecedented simultaneous enhancement in both band-gap narrowing and carrier-lifetime prolongation (up to 70% to ∼100% increase) under mild pressures at ∼0.3 GPa. The pressure-induced modulation on pure hybrid perovskites without introducing any adverse chemical or thermal effect clearly demonstrates the importance of band edges on the photon-electron interaction and maps a pioneering route toward a further increase in their photovoltaic performance.
Kong, Lingping; Liu, Gang; Gong, Jue; Hu, Qingyang; Schaller, Richard D.; Dera, Przemyslaw; Zhang, Dongzhou; Liu, Zhenxian; Yang, Wenge; Zhu, Kai; Tang, Yuzhao; Wang, Chuanyi; Wei, Su-Huai; Xu, Tao; Mao, Ho-kwang
2016-01-01
The organic–inorganic hybrid lead trihalide perovskites have been emerging as the most attractive photovoltaic materials. As regulated by Shockley–Queisser theory, a formidable materials science challenge for improvement to the next level requires further band-gap narrowing for broader absorption in solar spectrum, while retaining or even synergistically prolonging the carrier lifetime, a critical factor responsible for attaining the near-band-gap photovoltage. Herein, by applying controllable hydrostatic pressure, we have achieved unprecedented simultaneous enhancement in both band-gap narrowing and carrier-lifetime prolongation (up to 70% to ∼100% increase) under mild pressures at ∼0.3 GPa. The pressure-induced modulation on pure hybrid perovskites without introducing any adverse chemical or thermal effect clearly demonstrates the importance of band edges on the photon–electron interaction and maps a pioneering route toward a further increase in their photovoltaic performance. PMID:27444014
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Kong, Lingping; Liu, Gang; Gong, Jue; Hu, Qingyang; Schaller, Richard D.; Dera, Przemyslaw; Zhang, Dongzhou; Liu, Zhenxian; Yang, Wenge; Zhu, Kai; Tang, Yuzhao; Wang, Chuanyi; Wei, Su-Huai; Xu, Tao; Mao, Ho-kwang
2016-07-21
The organic-inorganic hybrid lead trihalide perovskites have been emerging as the most attractive photovoltaic materials. As regulated by Shockley-Queisser theory, a formidable materials science challenge for improvement to the next level requires further band-gap narrowing for broader absorption in solar spectrum, while retaining or even synergistically prolonging the carrier lifetime, a critical factor responsible for attaining the near-band-gap photovoltage. Herein, by applying controllable hydrostatic pressure, we have achieved unprecedented simultaneous enhancement in both band-gap narrowing and carrier-lifetime prolongation (up to 70% to -100% increase) under mild pressures at -0.3 GPa. The pressure-induced modulation on pure hybrid perovskites without introducing any adverse chemical or thermal effect clearly demonstrates the importance of band edges on the photon-electron interaction and maps a pioneering route toward a further increase in their photovoltaic performance.
Band gap shift and the optical nonlinear absorption of sputtered ZnO-TiO2 films.
Han, Yi-Bo; Han, Jun-Bo; Hao, Zhong-Hua
2011-06-01
ZnO-TiO2 composite films with different Zn/Ti atomic ratios were prepared with radio frequency reactive sputtering method. The Zn percentage composition (f(Zn)) dependent optical band gap and optical nonlinear absorption were investigated using the transmittance spectrum and the Z-scan technique, respectively. The results showed that composite films with f(Zn) in the range of 23.5%-88.3% are poor crystallized and their optical properties are anomalous which exhibit adjustable optical band gap and large optical nonlinear absorption. The optical absorption edge shifted to the blue wavelength direction with the increasing of f(Zn) and reached the minimum value of 285 nm for the sample with f(Zn) = 70.5%, which has the largest direct band gap of 4.30 eV. Further increasing of f(Zn) resulted in the red-shift of the optical absorption edge. The maximum optical nonlinear absorption coefficient of 1.5 x 10(3) cm/GW was also obtained for the same sample with f(Zn) = 70.5%, which is more than 40 times larger than those of pure TiO2 and ZnO films.
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Y. Trabelsi
2011-08-01
Full Text Available Two-dimensional quasi-periodic band gap structures were investigated theoretically in microwave frequency range. Quasiperiodic photonic crystal based on the square range, arranged in a quasi-periodical fashion which follows Thue Morse or Fibonaci period substitutional sequences were obtained by the inflation rules emerging from the quasi-periodic sequence. The introduction of 2D quasi-periodicity distribution like Thue Morse or Fibonacci order and deterministic aperiodicity give some interesting microwave properties and offers amultitude of adjacent pseudo-band gap in different frequency range. The potential of photonic structures are explored by varying the structural parameters. The photonic band gap formation was explored as function of geometries of the structures such as pillar radius and parameters of quasi-periodical sequences. The electromagnetic field distribution can be described as a quasi-localized state varied by some defect carried by Thue Morse order. These structures provide interesting properties, which could be used to design novelmicrowave devices.
Pressure dependence of the band-gap energy in BiTeI
Güler-Kılıç, Sümeyra; Kılıç, ćetin
2016-10-01
The evolution of the electronic structure of BiTeI, a layered semiconductor with a van der Waals gap, under compression is studied by employing semilocal and dispersion-corrected density-functional calculations. Comparative analysis of the results of these calculations shows that the band-gap energy of BiTeI decreases till it attains a minimum value of zero at a critical pressure, after which it increases again. The critical pressure corresponding to the closure of the band gap is calculated, at which BiTeI becomes a topological insulator. Comparison of the critical pressure to the pressure at which BiTeI undergoes a structural phase transition indicates that the closure of the band gap would not be hindered by a structural transformation. Moreover, the band-gap pressure coefficients of BiTeI are computed, and an expression of the critical pressure is devised in terms of these coefficients. Our findings indicate that the semilocal and dispersion-corrected approaches are in conflict about the compressibility of BiTeI, which result in overestimation and underestimation, respectively. Nevertheless, the effect of pressure on the atomic structure of BiTeI is found to be manifested primarily as the reduction of the width of the van der Waals gap according to both approaches, which also yield consistent predictions concerning the interlayer metallic bonding in BiTeI under compression. It is consequently shown that the calculated band-gap energies follow qualitatively and quantitatively the same trend within the two approximations employed here, and the transition to the zero-gap state occurs at the same critical width of the van der Waals gap.
Band structure of one-dimensional plasma photonic crystals using the Fresnel coefficients method
Jafari, A.; Rahmat, A.
2016-11-01
The current study has examined the band structures of two types of photonic crystals (PCs). The first is a one-dimensional metamaterial photonic crystal (1DMMPC) composed of double-layered units for which both layers of each unit are dielectric. The second type is a very similar one-dimensional plasma photonic crystal (1DPPC) also composed of double-layered units in which the first layer is a dielectric material but the second is a plasma layer. This study compares the band structures of the 1DMMPC with specific optical characteristics of the 1DPPC using the Fresnel coefficients method and also compares the results of this method with the results of the transfer matrix method. It is concluded that the dependency of the electric permittivity of the plasma layer on the incident field frequency causes differences in the band structures in 1DMMPC and 1DPPC for both TE and TM polarizations and their gaps reside in different frequencies. The band structures of the 1DMMPC and 1DPPC are confirmed by the results of the transfer matrix method.
Strain-Induced Energy Band Gap Opening in Two-Dimensional Bilayered Silicon Film
Ji, Z.; Zhou, R.; Lew Yan Voon, L. C.; Zhuang, Y.
2016-10-01
This work presents a theoretical study of the structural and electronic properties of bilayered silicon film (BiSF) under in-plane biaxial strain/stress using density functional theory (DFT). Atomic structures of the two-dimensional (2-D) silicon films are optimized by using both the local-density approximation (LDA) and generalized gradient approximation (GGA). In the absence of strain/stress, five buckled hexagonal honeycomb structures of the BiSF with triangular lattice have been obtained as local energy minima, and their structural stability has been verified. These structures present a Dirac-cone shaped energy band diagram with zero energy band gaps. Applying a tensile biaxial strain leads to a reduction of the buckling height. Atomically flat structures with zero buckling height have been observed when the AA-stacking structures are under a critical biaxial strain. Increase of the strain between 10.7% and 15.4% results in a band-gap opening with a maximum energy band gap opening of ˜0.17 eV, obtained when a 14.3% strain is applied. Energy band diagrams, electron transmission efficiency, and the charge transport property are calculated. Additionally, an asymmetric energetically favorable atomic structure of BiSF shows a non-zero band gap in the absence of strain/stress and a maximum band gap of 0.15 eV as a -1.71% compressive strain is applied. Both tensile and compressive strain/stress can lead to a band gap opening in the asymmetric structure.
k.p theory of freestanding narrow band gap semiconductor nanowires
Luo, Ning; Liao, Gaohua; Xu, H. Q.
2016-12-01
We report on a theoretical study of the electronic structures of freestanding nanowires made from narrow band gap semiconductors GaSb, InSb and InAs. The nanowires are described by the eight-band k.p Hamiltonians and the band structures are computed by means of the finite element method in a mixture basis consisting of linear triangular elements inside the nanowires and constrained Hermite triangular elements near the boundaries. The nanowires with two crystallographic orientations, namely the [001] and [111] orientations, and with different cross-sectional shapes are considered. For each orientation, the nanowires of the three narrow band gap semiconductors are found to show qualitatively similar characteristics in the band structures. However, the nanowires oriented along the two different crystallographic directions are found to show different characteristics in the valence bands. In particular, it is found that all the conduction bands show simple, good parabolic dispersions in both the [001]- and [111]-oriented nanowires, while the top valence bands show double-maximum structures in the [001]-oriented nanowires, but single-maximum structures in the [111]-oriented nanowires. The wave functions and spinor distributions of the band states in these nanowires are also calculated. It is found that significant mixtures of electron and hole states appear in the bands of these narrow band gap semiconductor nanowires. The wave functions exhibit very different distribution patterns in the nanowires oriented along the [001] direction and the nanowires oriented along the [111] direction. It is also shown that single-band effective mass theory could not reproduce all the band state wave functions presented in this work.
Specific heat of single crystal MgB2: a two-band superconductor with two different anisotropies.
Bouquet, F; Wang, Y; Sheikin, I; Plackowski, T; Junod, A; Lee, S; Tajima, S
2002-12-16
Heat-capacity measurements of a 39 microg MgB2 single crystal in fields up to 14 T and below 3 K allow the determination of the low-temperature linear term of the specific heat, its field dependence, and its anisotropy. Our results are compatible with two-band superconductivity, the band carrying the smaller gap being isotropic, that carrying the larger gap having an anisotropy of approximately 5. Three different upper critical fields are thus needed to describe the superconducting state of MgB2.
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Arafa H. Aly
2014-03-01
Full Text Available In the present work, we describe an efficient study of the stop-band/pass-band dispersive behavior of 1D phononic crystal. We have treated the propagation and localization of in-plane (P and S/anti-plane (SH shear waves in perfect/defect phononic crystals. Based on the transfer matrix method and Bloch theory, the dispersion relations were calculated and plotted for both SH and in-plane waves. In order to confirm the results, the reflection coefficients were plotted for in-plane waves and compared with dispersion relations results. The effect of several parameters such as type and thickness of defect layer on the waves localization had be taken in account. Moreover, we have studied the effect of temperature on the phononic band gaps for SH and in-plane waves. These results can be useful in using phononic crystals as temperature sensor materials. Also, the presented analysis can be extended to acoustic filters and wave multiplexer.
Evanescent waves and deaf bands in sonic crystals
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V. Romero-García
2011-12-01
Full Text Available The properties of sonic crystals (SC are theoretically investigated in this work by solving the inverse problem k(ω using the extended plane wave expansion (EPWE. The solution of the resulting eigenvalue problem gives the complex band structure which takes into account both the propagating and the evanescent modes. In this work we show the complete mathematical formulation of the EPWE for SC and the supercell approximation for its use in both a complete SC and a SC with defects. As an example we show a novel interpretation of the deaf bands in a complete SC in good agreement with multiple scattering simulations.
Evanescent waves and deaf bands in sonic crystals
Romero-García, V.; Garcia-Raffi, L. M.; Sánchez-Pérez, J. V.
2011-12-01
The properties of sonic crystals (SC) are theoretically investigated in this work by solving the inverse problem k(ω) using the extended plane wave expansion (EPWE). The solution of the resulting eigenvalue problem gives the complex band structure which takes into account both the propagating and the evanescent modes. In this work we show the complete mathematical formulation of the EPWE for SC and the supercell approximation for its use in both a complete SC and a SC with defects. As an example we show a novel interpretation of the deaf bands in a complete SC in good agreement with multiple scattering simulations.
Sangiorgi, Nicola; Aversa, Lucrezia; Tatti, Roberta; Verucchi, Roberto; Sanson, Alessandra
2017-02-01
The optical band gap energy and the electronic processes involved are important parameters of a semiconductor material and it is therefore important to determine their correct values. Among the possible methods, the spectrophotometric is one of the most common. Several methods can be applied to determine the optical band gap energy and still now a defined consensus on the most suitable one has not been established. A highly diffused and accurate optical method is based on Tauc relationship, however to apply this equation is necessary to know the nature of the electronic transitions involved commonly related to the coefficient n. For this purpose, a spectrophotometric technique was used and we developed a graphical method for electronic transitions and band gap energy determination for samples in powder form. In particular, the n coefficient of Tauc equation was determined thorough mathematical elaboration of experimental results on TiO2 (anatase), ZnO, and SnO2. The results were used to calculate the band gap energy values and then compared with the information obtained by Ultraviolet Photoelectron Spectroscopy (UPS). This approach provides a quick and accurate method for band gap determination through n coefficient calculation. Moreover, this simple but reliable method can be used to evaluate the nature of electronic transition that occurs in a semiconductor material in powder form.
Band-gap control in phosphorene/BN structures from first-principles calculations
Marsoner Steinkasserer, Lukas Eugen; Suhr, Simon; Paulus, Beate
2016-09-01
Using both DFT as well as G0W0 calculations, we investigate static and dynamic effects on the phosphorene band gap upon deposition and encapsulation on/in BN multilayers. We demonstrate how competing long- and short-range effects cause the phosphorene band gap to increase at low P -BN interlayer spacings, while the band gap is found to drop below that of isolated phosphorene in the BN/P bilayer at intermediate distances around 4 Å. Subsequent stacking of BN layers, i.e., BN/BN/P and BN/BN/BN/P is found to have a negligible effect at the DFT level while at the G0W0 level, increased screening lowers the band gap as compared to the BN/P bilayer. Encapsulation between two BN layers, on the other hand, is found to further increase the phosphorene band gap with respect to the BN/P bilayer. Lastly we investigate the use of the GLLB-SC functional as a starting point for G0W0 calculations showing it to, in the case of phosphorene, yield results close to those obtained from G W0@P B E .
Band gap engineering of zinc selenide thin films through alloying with cadmium telluride.
Al-Kuhaili, M F; Kayani, A; Durrani, S M A; Bakhtiari, I A; Haider, M B
2013-06-12
This work investigates band gap engineering of zinc selenide (ZnSe) thin films. This was achieved by mixing ZnSe with cadmium telluride (CdTe). The mass ratio (x) of CdTe in the starting material was varied in the range x = 0-0.333. The films were prepared using thermal evaporation. The chemical composition of the films was investigated through energy dispersive spectroscopy and Rutherford backscattering spectrometry. Structural analysis was carried out using X-ray diffraction and atomic force microscopy. Normal incidence transmittance and reflectance were measured over the wavelength range 300-1300 nm. The absorption coefficients and band gaps were determined from these spectrophotometric measurements. The band gap monotonically decreased from 2.58 eV (for x = 0) to 1.75 eV (for x = 0.333). Photocurrent measurements indicated that the maximum current density was obtained for films with x = 0.286. A figure of merit, based on crystallinity, band gap, and photocurrent, was defined. The optimum characteristics were obtained for the films with x = 0.231, for which the band gap was 2.14 eV.
Franco, A., Jr.; Pessoni, H. V. S.
2017-02-01
Nanostructured Zn1-xGdxOδ (0 ≤ x ⩽ 0.02) powders were synthesized by the combustion reaction method (CR) with the purpose to investigate the effect of Gd doping on the structural, optical band-gap, dielectric and magnetic properties at room temperature. The structure and morphology of all samples were characterized by X-ray diffraction (XRD), and transmission electron microscope (TEM). The XRD patterns of all samples exhibited sharp and intensive peaks of hexagonal wurtzite structure of ZnO without any evidence of spurious crystalline phases. The nanoparticles crystalized in roughly spherical morphology with bimodal particle size distribution centered at ∼ 30 , ∼ 100 and ∼ 70 , ∼ 160 nm for undoped and Gd - doped ZnO (x=0.02), respectively. Diffuse reflectance spectrum of each sample was obtained by using a UV/VIS/Near spectrometer and the optical band-gap, Eg, values decreased with increasing Gd doping concentration; being ∼ 3.23 , and ∼ 3.17 eV for x=0 and 0.02, respectively at room temperature. This red shift on the band-gap was discussed in terms of new band levels below the conducting band. Also, the dielectric permittivity data of all samples could be evaluated by the Cole- Cole model. Seems that both oxygen vacancies (VO) or/and interstitial oxygen (O″ı¨) defects present in the Gd - doped ZnO samples play an important rule in the dielectric permittivity at room temperature. Furthermore, all Gd - doped ZnO samples exhibited typical paramagnetic behavior at rom temperature.
Low band gap frequencies and multiplexing properties in 1D and 2D mass spring structures
Aly, Arafa H.; Mehaney, Ahmed
2016-11-01
This study reports on the propagation of elastic waves in 1D and 2D mass spring structures. An analytical and computation model is presented for the 1D and 2D mass spring systems with different examples. An enhancement in the band gap values was obtained by modeling the structures to obtain low frequency band gaps at small dimensions. Additionally, the evolution of the band gap as a function of mass value is discussed. Special attention is devoted to the local resonance property in frequency ranges within the gaps in the band structure for the corresponding infinite periodic lattice in the 1D and 2D mass spring system. A linear defect formed of a row of specific masses produces an elastic waveguide that transmits at the narrow pass band frequency. The frequency of the waveguides can be selected by adjusting the mass and stiffness coefficients of the materials constituting the waveguide. Moreover, we pay more attention to analyze the wave multiplexer and DE-multiplexer in the 2D mass spring system. We show that two of these tunable waveguides with alternating materials can be employed to filter and separate specific frequencies from a broad band input signal. The presented simulation data is validated through comparison with the published research, and can be extended in the development of resonators and MEMS verification.
Microscopic theoretical model study of band gap opening in AA-stacked bi-layer graphene
Sahu, Sivabrata; Parashar, S. K. S.; Rout, G. C.
2016-05-01
We address here a tight-binding theoretical model calculation for AA-stacked bi-layer graphene taking into account of a biased potential between two layers to study the density of states and the band dispersion within the total Brillouin zone. We have calculated the electronic Green's function for electron operator corresponding to A and B sub lattices by Zubarev's Green's function technique from which the electronic density of states and the electron band energy dispersion are calculated. The numerically computed density of states and band energy dispersions are investigated by tuning the biased potential to exhibit the band gap by varying the different physical parameters.
Theoretical investigation into tunable band gaps of an Euler- Bernoulli beam with 2DOF LR structures
Xingqian, Zhao; Changgeng, Shuai; Yan, Gao; Rustighi, Emiliano
2016-09-01
This paper is concerned with an intelligent phonotic crystals (IPC) consisting of an Euler-Bernoulli beam attached with 2DOF locally resonant (LR) structures. The novel design of the dielectric electroactive polymer (DEAP) rings acting as the springs of oscillators is presented that could be employed to control the transmission of flexural waves on the beam. Tunable band gaps (BGs) can be realized by changing the stiffness of each oscillator driven by the external electric field, where the DEAPs transform electric energy directly into mechanical work under the applied voltage. Discrete copper (Cu) strips are then attached to the DEAP to allow the deformation of DEAP rings. The transfer matrix (TM) theory is adopted to assist readers to better understand the formation of the BG. Simulation results show that this particular configuration is effective for attenuating the flexural waves at low frequencies below 1000Hz where the tunable BGs may occur. Moreover, it is found that a wider BG can be achieved and shifts towards higher frequencies by increasing the applied voltages.
Zanatta, G; Gottfried, C; Silva, A M; Caetano, E W S; Sales, F A M; Freire, V N
2014-03-28
Results of optical absorption measurements are presented together with calculated structural, electronic, and optical properties for the anhydrous monoclinic L-asparagine crystal. Density functional theory (DFT) within the generalized gradient approximation (GGA) including dispersion effects (TS, Grimme) was employed to perform the calculations. The optical absorption measurements revealed that the anhydrous monoclinic L-asparagine crystal is a wide band gap material with 4.95 eV main gap energy. DFT-GGA+TS simulations, on the other hand, produced structural parameters in very good agreement with X-ray data. The lattice parameter differences Δa, Δb, Δc between theory and experiment were as small as 0.020, 0.051, and 0.022 Å, respectively. The calculated band gap energy is smaller than the experimental data by about 15%, with a 4.23 eV indirect band gap corresponding to Z → Γ and Z → β transitions. Three other indirect band gaps of 4.30 eV, 4.32 eV, and 4.36 eV are assigned to α3 → Γ, α1 → Γ, and α2 → Γ transitions, respectively. Δ-sol computations, on the other hand, predict a main band gap of 5.00 eV, just 50 meV above the experimental value. Electronic wavefunctions mainly originating from O 2p-carboxyl, C 2p-side chain, and C 2p-carboxyl orbitals contribute most significantly to the highest valence and lowest conduction energy bands, respectively. By varying the lattice parameters from their converged equilibrium values, we show that the unit cell is less stiff along the b direction than for the a and c directions. Effective mass calculations suggest that hole transport behavior is more anisotropic than electron transport, but the mass values allow for some charge mobility except along a direction perpendicular to the molecular layers of L-asparagine which form the crystal, so anhydrous monoclinic L-asparagine crystals could behave as wide gap semiconductors. Finally, the calculations point to a high degree of optical
Energy Technology Data Exchange (ETDEWEB)
Zanatta, G.; Gottfried, C. [Departamento de Bioquímica, Universidade Federal do Rio Grande do Sul, 90035-003 Porto Alegre-RS (Brazil); Silva, A. M. [Universidade Estadual do Piauí, 64260-000 Piripiri-Pi (Brazil); Caetano, E. W. S., E-mail: ewcaetano@gmail.com [Instituto de Educação, Ciência e Tecnologia do Ceará, 60040-531 Fortaleza-CE (Brazil); Sales, F. A. M.; Freire, V. N. [Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, 60455-760 Fortaleza-CE (Brazil)
2014-03-28
Results of optical absorption measurements are presented together with calculated structural, electronic, and optical properties for the anhydrous monoclinic L-asparagine crystal. Density functional theory (DFT) within the generalized gradient approximation (GGA) including dispersion effects (TS, Grimme) was employed to perform the calculations. The optical absorption measurements revealed that the anhydrous monoclinic L-asparagine crystal is a wide band gap material with 4.95 eV main gap energy. DFT-GGA+TS simulations, on the other hand, produced structural parameters in very good agreement with X-ray data. The lattice parameter differences Δa, Δb, Δc between theory and experiment were as small as 0.020, 0.051, and 0.022 Å, respectively. The calculated band gap energy is smaller than the experimental data by about 15%, with a 4.23 eV indirect band gap corresponding to Z → Γ and Z → β transitions. Three other indirect band gaps of 4.30 eV, 4.32 eV, and 4.36 eV are assigned to α3 → Γ, α1 → Γ, and α2 → Γ transitions, respectively. Δ-sol computations, on the other hand, predict a main band gap of 5.00 eV, just 50 meV above the experimental value. Electronic wavefunctions mainly originating from O 2p–carboxyl, C 2p–side chain, and C 2p–carboxyl orbitals contribute most significantly to the highest valence and lowest conduction energy bands, respectively. By varying the lattice parameters from their converged equilibrium values, we show that the unit cell is less stiff along the b direction than for the a and c directions. Effective mass calculations suggest that hole transport behavior is more anisotropic than electron transport, but the mass values allow for some charge mobility except along a direction perpendicular to the molecular layers of L-asparagine which form the crystal, so anhydrous monoclinic L-asparagine crystals could behave as wide gap semiconductors. Finally, the calculations point to a high degree of optical
Spectrophotometer spectral bandwidth calibration with absorption bands crystal standard.
Soares, O D; Costa, J L
1999-04-01
A procedure for calibration of a spectral bandwidth standard for high-resolution spectrophotometers is described. Symmetrical absorption bands for a crystal standard are adopted. The method relies on spectral band shape fitting followed by a convolution with the slit function of the spectrophotometer. A reference spectrophotometer is used to calibrate the spectral bandwidth standard. Bandwidth calibration curves for a minimum spectral transmission factor relative to the spectral bandwidth of the reference spectrophotometer are derived for the absorption bands at the wavelength of the band absorption maximum. The family of these calibration curves characterizes the spectral bandwidth standard. We calibrate the spectral bandwidth of a spectrophotometer with respect to the reference spectrophotometer by determining the spectral transmission factor minimum at every calibrated absorption band of the bandwidth standard for the nominal instrument values of the spectral bandwidth. With reference to the standard spectral bandwidth calibration curves, the relation of the spectral bandwidth to the reference spectrophotometer is determined. We determine the discrepancy in the spectrophotometers' spectral bandwidths by averaging the spectral bandwidth discrepancies relative to the standard calibrated values found at the absorption bands considered. A weighted average of the uncertainties is taken.
Band gap engineering in polymers through chemical doping and applied mechanical strain
Lanzillo, Nicholas A.; Breneman, Curt M.
2016-08-01
We report simulations based on density functional theory and many-body perturbation theory exploring the band gaps of common crystalline polymers including polyethylene, polypropylene and polystyrene. Our reported band gaps of 8.6 eV for single-chain polyethylene and 9.1 eV for bulk crystalline polyethylene are in excellent agreement with experiment. The effects of chemical doping along the polymer backbone and side-groups are explored, and the use mechanical strain as a means to modify the band gaps of these polymers over a range of several eV while leaving the dielectric constant unchanged is discussed. This work highlights some of the opportunities available to engineer the electronic properties of polymers with wide-reaching implications for polymeric dielectric materials used for capacitive energy storage.
Synthesis of copper quantum dots by chemical reduction method and tailoring of its band gap
Directory of Open Access Journals (Sweden)
P. G. Prabhash
2016-05-01
Full Text Available Metallic copper nano particles are synthesized with citric acid and CTAB (cetyltrimethylammonium bromide as surfactant and chlorides as precursors. The particle size and surface morphology are analyzed by High Resolution Transmission Electron Microscopy. The average size of the nano particle is found to be 3 - 10 nm. The optical absorption characteristics are done by UV-Visible spectrophotometer. From the Tauc plots, the energy band gaps are calculated and because of their smaller size the particles have much higher band gap than the bulk material. The energy band gap is changed from 3.67 eV to 4.27 eV in citric acid coated copper quantum dots and 4.17 eV to 4.52 eV in CTAB coated copper quantum dots.
Experimental Work With Photonic Band Gap Fiber: Building A Laser Electron Accelerator
Energy Technology Data Exchange (ETDEWEB)
Lincoln, Melissa; Ischebeck, Rasmus; Nobel, Robert; Siemann, Robert; /SLAC
2006-09-29
In the laser acceleration project E-163 at the Stanford Linear Accelerator Center, work is being done toward building a traveling wave accelerator that uses as its accelerating structure a length of photonic band gap fiber. The small scale of the optical fiber allows radiation at optical wavelengths to be used to provide the necessary accelerating energy. Optical wavelength driving energy in a small structure yields higher accelerating fields. The existence of a speed-of-light accelerating mode in a photonic band gap fiber has been calculated previously [1]. This paper presents an overview of several of the experimental challenges posed in the development of the proposed photonic band gap fiber accelerator system.
Band gap of β-PtO2 from first-principles
Directory of Open Access Journals (Sweden)
Yong Yang
2012-06-01
Full Text Available We studied the band gap of β-PtO2 using first-principles calculations based on density functional theory (DFT. The results are obtained within the framework of the generalized gradient approximation (GGA, GGA+U, GW, and the hybrid functional methods. For the different types of calculations, the calculated band gap increases from ∼0.46 eV to 1.80 eV. In particular, the band gap by GW (conventional and self-consistent calculation shows a tendency of converging to ∼1.25 ± 0.05 eV. The effect of on-site Coulomb interaction on the bonding characteristics is also analyzed.
Stoumpos, Constantinos C; Mao, Lingling; Malliakas, Christos D; Kanatzidis, Mercouri G
2017-01-03
The present study deals with the structural characterization and classification of the novel compounds 1-8 into perovskite subclasses and proceeds in extracting the structure-band gap relationships between them. The compounds were obtained from the employment of small, 3-5-atom-wide organic ammonium ions seeking to discover new perovskite-like compounds. The compounds reported here adopt unique or rare structure types akin to the prototype structure perovskite. When trimethylammonium (TMA) was employed, we obtained TMASnI3 (1), which is our reference compound for a "perovskitoid" structure of face-sharing octahedra. The compounds EASnI3 (2b), GASnI3 (3a), ACASnI3 (4), and IMSnI3 (5) obtained from the use of ethylammonium (EA), guanidinium (GA), acetamidinium (ACA), and imidazolium (IM) cations, respectively, represent the first entries of the so-called "hexagonal perovskite polytypes" in the hybrid halide perovskite library. The hexagonal perovskites define a new family of hybrid halide perovskites with a crystal structure that emerges from a blend of corner- and face-sharing octahedral connections in various proportions. The small organic cations can also stabilize a second structural type characterized by a crystal lattice with reduced dimensionality. These compounds include the two-dimensional (2D) perovskites GA2SnI4 (3b) and IPA3Sn2I7 (6b) and the one-dimensional (1D) perovskite IPA3SnI5 (6a). The known 2D perovskite BA2MASn2I7 (7) and the related all-inorganic 1D perovskite "RbSnF2I" (8) have also been synthesized. All compounds have been identified as medium-to-wide-band-gap semiconductors in the range of Eg = 1.90-2.40 eV, with the band gap progressively decreasing with increased corner-sharing functionality and increased torsion angle in the octahedral connectivity.
An efficient method of DFT/LDA band-gap correction
Scharoch, Pawel; Winiarski, Maciej
2013-12-01
It has been shown that the underestimated by DFT/LDA(GGA) band-gap can be efficiently corrected by an averaging procedure of transition energies over a region close to the direct band-gap transition, which we call the Δ(EIG) method (the differences in the Kohn-Sham eigenvalues). For small excitations the averaging appears to be equivalent to the Δ(SCF) approach (differences in the self-consistent energies), which is a consequence of Janak’s theorem and has been confirmed numerically. The Gaussian distribution in k-space for electronic excitation has been used (occupation numbers in the Δ(SCF) or eigenenergy sampling in the Δ(EIG)). A systematic behavior of the k-space localization parameter σk correcting the band-gap has been observed in numerical experiments. On that basis some sampling schemes for band-gap correction have been proposed and tested in the prediction of the band-gap behavior in InxGa(1-x)N semiconducting alloy, and a very good agreement with independent calculations has been obtained. In the context of the work the issue of electron localization in the r-space has been discussed which, as it has been predicted by Mori-Sánchez et al. [P. Mori-Sánchez, A.J. Cohen, W. Yang, Phys. Rev. Lett. 100 (2008) 146401], should reduce the effect of the convex behavior of the LDA/GGA functionals and improve the band-gap prediction within DFT/LDA(GGA). A scheme for electron localization in r-space has been suggested.
Band gap and conductivity variations of ZnO thin films by doping with Aluminium
Vattappalam, Sunil C.; Thomas, Deepu; T, Raju Mathew; Augustine, Simon; Mathew, Sunny
2015-02-01
Zinc Oxide thin films were prepared by Successive Ionic layer adsorption and reaction technique(SILAR). Aluminium was doped for different doping concentrations from 3 at.% to 12 at.% in steps of 3 at.%. Conductivity of the samples were taken at different temperatures. UV Spectrograph of the samples were taken and the band gap of each sample was found from the data. It was observed that as the doping concentration of Aluminium increases, the band gap of the samples decreases and concequently conductivity of the samples increases.
Band gap and conductivity variations of ZnO nano structured thin films annealed under Vacuum
Vattappalam, Sunil C.; Thomas, Deepu; T, Raju Mathew; Augustine, Simon; Mathew, Sunny
2015-02-01
Zinc Oxide thin films were prepared by Successive Ionic layer adsorption and reaction technique(SILAR). The samples were annealed under vacuum and conductivity of the samples were taken at different temperatures. UV Spectrograph of the samples were taken and the band gap of each sample was found from the data. All the results were compared with that of the sample annealed under air. It was observed that the band gap decreases and concequently conductivity of the samples increases when the samples are annealed under vacuum.
Two-dimensional boron-nitrogen-carbon monolayers with tunable direct band gaps
Zhang, Miao; Gao, Guoying; Kutana, Alex; Wang, Yanchao; Zou, Xiaolong; Tse, John S.; Yakobson, Boris I.; Li, Hongdong; Liu, Hanyu; Ma, Yanming
2015-07-01
The search for new candidate semiconductors with direct band gaps of ~1.4 eV has attracted significant attention, especially among the two-dimensional (2D) materials, which have become potential candidates for next-generation optoelectronics. Herein, we systematically studied 2D Bx/2Nx/2C1-x (0 optimization method (CALYPSO) in conjunction with density functional theory. Furthermore, we examine more stoichiometries by the cluster expansion technique based on a hexagonal lattice. The results reveal that all monolayer Bx/2Nx/2C1-x stoichiometries adopt a planar honeycomb character and are dynamically stable. Remarkably, electronic structural calculations show that most of Bx/2Nx/2C1-x phases possess direct band gaps within the optical range, thereby they can potentially be used in high-efficiency conversion of solar energy to electric power, as well as in p-n junction photovoltaic modules. The present results also show that the band gaps of Bx/2Nx/2C1-x can be widely tuned within the optical range by changing the concentration of carbon, thus allowing the fast development of band gap engineered materials in optoelectronics. These new findings may enable new approaches to the design of microelectronic devices.The search for new candidate semiconductors with direct band gaps of ~1.4 eV has attracted significant attention, especially among the two-dimensional (2D) materials, which have become potential candidates for next-generation optoelectronics. Herein, we systematically studied 2D Bx/2Nx/2C1-x (0 optimization method (CALYPSO) in conjunction with density functional theory. Furthermore, we examine more stoichiometries by the cluster expansion technique based on a hexagonal lattice. The results reveal that all monolayer Bx/2Nx/2C1-x stoichiometries adopt a planar honeycomb character and are dynamically stable. Remarkably, electronic structural calculations show that most of Bx/2Nx/2C1-x phases possess direct band gaps within the optical range, thereby they can
Lattice reconfiguration and phononic band-gap adaptation via origami folding
Thota, M.; Li, S.; Wang, K. W.
2017-02-01
We introduce a framework of utilizing origami folding to redistribute the inclusions of a phononic structure to achieve significant phononic band-gap adaptation. Cylindrical inclusions are attached to the vertices of a Miura-Ori sheet, whose 1 degree-of-freedom rigid folding can enable fundamental reconfigurations in the underlying periodic architecture via switching between different Bravais lattice types. Such a reconfiguration can drastically change the wave propagation behavior in terms of band gap and provide a scalable and practical means for broadband wave tailoring.
Band Gap Narrowing and Widening of ZnO Nanostructures and Doped Materials
2015-01-01
Band gap change in doped ZnO is an observed phenomenon that is very interesting from the fundamental point of view. This work is focused on the preparation of pure and single phase nanostructured ZnO and Cu as well as Mn-doped ZnO for the purpose of understanding the mechanisms of band gap narrowing in the materials. ZnO, Zn0.99Cu0.01O and Zn0.99Mn0.01O materials were prepared using a wet chemistry method, and X-ray diffraction (XRD) results showed that all samples were pure and single phase....
Tuning the light emission properties by band gap engineering in hybrid lead halide perovskite.
D'Innocenzo, Valerio; Srimath Kandada, Ajay Ram; De Bastiani, Michele; Gandini, Marina; Petrozza, Annamaria
2014-12-24
We report about the relationship between the morphology and luminescence properties of methylammonium lead trihalide perovskite thin films. By tuning the average crystallite dimension in the film from tens of nanometers to a few micrometers, we are able to tune the optical band gap of the material along with its photoluminescence lifetime. We demonstrate that larger crystallites present smaller band gap and longer lifetime, which correlates to a smaller radiative bimolecular recombination coefficient. We also show that they present a higher optical gain, becoming preferred candidates for the realization of CW lasing devices.
Empirical determination of the energy band gap narrowing in highly doped n+ silicon
Yan, Di; Cuevas, Andres
2013-07-01
Highly doped regions in silicon devices should be analyzed using Fermi-Dirac statistics, taking into account energy band gap narrowing (BGN). An empirical expression for the BGN as a function of dopant concentration is derived here by matching the modeled and measured thermal recombination current densities J0 of a broad range of n+ dopant concentration profiles prepared by phosphorus diffusion. The analysis is repeated with Boltzmann statistics in order to determine a second empirical expression for the apparent energy band gap narrowing, which is found to be in good agreement with previous work.
Semiconducting graphene nanoribbon retains band gap on amorphous or crystalline SiO_2
Hossain, M. Zubaer
2011-01-01
Electronic properties of a semiconducting armchair graphene nanoribbon on SiO_2 are examined using first-principles calculations and taking into account the van der Waals interaction. Unlike semiconducting carbon nanotubes, which exhibit variations in band gap on SiO_2, the nanoribbon is found to retain its band gap on SiO_2, regardless of the separation distance or the dielectric’s surface type—crystalline or amorphous. The interfacial interaction leads to electron-transfer from the nanor...
Institute of Scientific and Technical Information of China (English)
ZHU Wen-Xing; ZHANG Yan; SHI Jun-Jie
2008-01-01
A two-dimensional photonic crystal with a one-dimensional periodic dielectric background is proposed. The photonic band modulation effects due to the periodic background are investigated based on the plane wave expansion method. We find that periodic modulation of the dielectric background greatly alters photonic band structures, especially for the E-polarization modes. The number, width and position of the photonic band gaps (PBGs) sensitively depend on the structure parameters (the layer thicknesses and dielectric constants) of the one-dimensional periodic background.
The scaling of the effective band gaps in indium-arsenide quantum dots and wires.
Wang, Fudong; Yu, Heng; Jeong, Sohee; Pietryga, Jeffrey M; Hollingsworth, Jennifer A; Gibbons, Patrick C; Buhro, William E
2008-09-23
Colloidal InAs quantum wires having diameters in the range of 5-57 nm and narrow diameter distributions are grown from Bi nanoparticles by the solution-liquid-solid (SLS) mechanism. The diameter dependence of the effective band gaps (DeltaE(g)s) in the wires is determined from photoluminescence spectra and compared to the experimental results for InAs quantum dots and rods and to the predictions of various theoretical models. The DeltaE(g) values for InAs quantum dots and wires are found to scale linearly with inverse diameter (d(-1)), whereas the simplest confinement models predict that DeltaE(g) should scale with inverse-square diameter (d(-2)). The difference in the observed and predicted scaling dimension is attributed to conduction-band nonparabolicity induced by strong valence-band-conduction-band coupling in the narrow-gap InAs semiconductor.
Niedermeier, Christian A.; Råsander, Mikael; Rhode, Sneha; Kachkanov, Vyacheslav; Zou, Bin; Alford, Neil; Moram, Michelle A.
2016-08-01
Epitaxial transparent oxide NixMg1-xO (0 ≤ x ≤ 1) thin films were grown on MgO(100) substrates by pulsed laser deposition. High-resolution synchrotron X-ray diffraction and high-resolution transmission electron microscopy analysis indicate that the thin films are compositionally and structurally homogeneous, forming a completely miscible solid solution. Nevertheless, the composition dependence of the NixMg1-xO optical band gap shows a strong non-parabolic bowing with a discontinuity at dilute NiO concentrations of x band structure and the density of states demonstrate that deep Ni 3d levels are introduced into the MgO band gap, which significantly reduce the fundamental gap as confirmed by optical absorption spectra. These states broaden into a Ni 3d-derived conduction band for x > 0.074 and account for the anomalously large band gap narrowing in the NixMg1-xO solid solution system.
Mubeen, Syed; Hernandez-Sosa, Gerardo; Moses, Daniel; Lee, Joun; Moskovits, Martin
2011-12-14
A fruitful paradigm in the development of low-cost and efficient photovoltaics is to dope or otherwise photosensitize wide band gap semiconductors in order to improve their light harvesting ability for light with sub-band-gap photon energies.(1-8) Here, we report significant photosensitization of TiO2 due to the direct injection by quantum tunneling of hot electrons produced in the decay of localized surface-plasmon polaritons excited in gold nanoparticles (AuNPs) embedded in the semiconductor (TiO2). Surface plasmon decay produces electron-hole pairs in the gold.(9-15) We propose that a significant fraction of these electrons tunnel into the semiconductor's conduction band resulting in a significant electron current in the TiO2 even when the device is illuminated with light with photon energies well below the semiconductor's band gap. Devices fabricated with (nonpercolating) multilayers of AuNPs in a TiO2 film produced over 1000-fold increase in photoconductance when illuminated at 600 nm over what TiO2 films devoid of AuNPs produced. The overall current resulting from illumination with visible light is ∼50% of the device current measured with UV (ℏω>Eg band gap) illumination. The above observations suggest that plasmonic nanostructures (which can be fabricated with absorption properties that cover the full solar spectrum) can function as a viable alternative to organic photosensitizers for photovoltaic and photodetection applications.
Dipole-induced band-gap reduction in an inorganic cage.
Lv, Yaokang; Cheng, Jun; Steiner, Alexander; Gan, Lihua; Wright, Dominic S
2014-02-10
Metal-doped polyoxotitanium cages are a developing class of inorganic compounds which can be regarded as nano- and sub-nano sized molecular relatives of metal-doped titania nanoparticles. These species can serve as models for the ways in which dopant metal ions can be incorporated into metal-doped titania (TiO2 ), a technologically important class of photocatalytic materials with broad applications in devices and pollution control. In this study a series of cobalt(II)-containing cages in the size range ca. 0.7-1.3 nm have been synthesized and structurally characterized, allowing a coherent study of the factors affecting the band gaps in well-defined metal-doped model systems. Band structure calculations are consistent with experimental UV/Vis measurements of the Tix Oy absorption edges in these species and reveal that molecular dipole moment can have a profound effect on the band gap. The observation of a dipole-induced band-gap decrease mechanism provides a potentially general design strategy for the formation of low band-gap inorganic cages.
Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain
Guilloy, K.; Pauc, N.; Gassenq, A.; Niquet, Y. M.; Escalante, J. M.; Duchemin, I.; Tardif, S; Dias, G. Osvaldo; Rouchon, D.; Widiez, J.; Hartmann, J.M.; Geiger, R.; Zabel, T.; Sigg, H; Faist, J.
2016-01-01
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 % uniaxially loaded strains. In this work, we use a micro-bridge geometry to uniaxially stress ger...
Wang, Qiang; Liu, Hui; Zhu, Shining; Chan, C T
2016-01-01
Zak phase labels the topological property of one-dimensional Bloch Bands. Here we propose a scheme and experimentally measure the Zak phase in a photonic system. The Zak phase of a bulk band of is related to the topological properties of the two band gaps sandwiching this band, which in turn can be inferred from the existence or absence of an interface state. Using reflection spectrum measurement, we determined the existence of interface states in the gaps, and then obtained the Zak phases. The knowledge of Zak phases can also help us predict the existence of interface states between a metasurface and a photonic crystal. By manipulating the property of the metasurface, we can further tune the excitation frequency and the polarization of the interface state.
Relationship between band gap and bond length alternation in organic conjugated polymers
Bredas, J. L.
1985-04-01
A description is given of calculations of the evolution of the band gap as a function of geometry in conjugated polymers based on aromatic rings; polyparaphenylene, polypyrrole, polythiophene. The results demonstrate that the gap decreases as a function of increasing quinoid character of the backbone and is thus not minimal in the case of zero bond length alternation, in contrast to the situation found in polyacetylene-like compounds. The consequences of these results are stressed for the understanding of the effects of doping and for the design of new organic polymers with small gaps.
Indian Academy of Sciences (India)
Navinder Singh
2005-01-01
A model calculation is given for the energy relaxation of a non-equilibrium distribution of hot electrons (holes) prepared in the conduction (valence) band of a polar indirect band-gap semiconductor, which has been subjected to homogeneous photoexcitation by a femtosecond laser pulse. The model assumes that the pulsed photoexcitation creates two distinct but spatially interpenetrating electron and hole non-equilibrium subsystems that initially relax non-radiatively through the electron (hole)–phonon processes towards the conduction (valence) band minimum (maximum), and finally radiatively through the phonon-assisted electron–hole recombination across the band-gap, which is a relatively slow process. This leads to an accumulation of electrons (holes) at the conduction (valence) band minimum (maximum). The resulting peaking of the carrier density and the entire evolution of the hot electron (hole) distribution has been calculated. The latter may be time resolved by a pump-probe study. The model is particularly applicable to a divided (nanometric) polar indirect band-gap semiconductor with a low carrier concentration and strong electron–phonon coupling, where the usual two-temperature model [1–4] may not be appropriate.
Effect of band gap engineering in anionic-doped TiO2 photocatalyst
Samsudin, Emy Marlina; Abd Hamid, Sharifah Bee
2017-01-01
A simple yet promising strategy to modify TiO2 band gap was achieved via dopants incorporation which influences the photo-responsiveness of the photocatalyst. The mesoporous TiO2 was successfully mono-doped and co-doped with nitrogen and fluorine dopants. The results indicate that band gap engineering does not necessarily requires oxygen substitution with nitrogen or/and fluorine, but from the formation of additional mid band and Ti3+ impurities states. The formation of oxygen vacancies as a result of modified color centres and Ti3+ ions facilitates solar light absorption and influences the transfer, migration and trapping of the photo-excited charge carriers. The synergy of dopants in co-doped TiO2 shows better optical properties relative to single N and F doped TiO2 with c.a 0.95 eV band gap reduction. Evidenced from XPS, the synergy between N and F in the co-doped TiO2 uplifts the valence band towards the conduction band. However, the photoluminescence data reveals poorer electrons and holes separation as compared to F-doped TiO2. This observation suggests that efficient solar light harvesting was achievable via N and F co-doping, but excessive defects could act as charge carriers trapping sites.
Electronic structure of the valence band of II--VI wide band gap semiconductor interfaces
1996-01-01
In this work we present the electronic band structure for (001)--CdTe interfaces with some other II--VI zinc blende semiconductors. We assume ideal interfaces. We use tight binding Hamiltonians with an orthogonal basis ($s p^3 s^*$). We make use of the well--known Surface Green's Function Matching method to calculate the interface band structure. In our calculation the dominion of the interface is constituted by four atomic layers. We consider here anion--anion interfaces only. We have includ...
High-power picosecond pulse delivery through hollow core photonic band gap fibers
DEFF Research Database (Denmark)
Michieletto, Mattia; Johansen, Mette Marie; Lyngsø, Jens Kristian;
2016-01-01
We demonstrated robust and bend insensitive fiber delivery of high power laser with diffraction limited beam quality for two different kinds of hollow core band gap fibers. The light source for this experiment consists of ytterbium-doped double clad fiber aeroGAIN-ROD-PM85 in a high power amplifier...
Band gap and conductivity evaluation of carbon nanotube with hematite for green ammonia synthesis
Rehman, Zia Ur; Yahya, Noorhana; Shafie, A'fza; Soleimani, Hassan; Alqasim, Bilal Hassan; Irfan, Muhammad; Qureshi, Saima
2016-11-01
To understand the change in number of electrons, band gap and total energy in the catalyst simulation was performed using Cambridge Serial Total Energy Package (CASTEP). Two catalyst were taken into consideration namely carbon nanotubes (CNTs) and hematite adjacent with CNTs. The simulation based study of the adsorption of hydrogen and nitrogen with reference to change in number of electron and band-gap of carbon nano tubes and hematite mixed with carbon nanotubes was not reported in literature. For this reason carbon nanotubes band gap for different chirality and number of walls was calculated through simulation. After that simulation for number of electrons, band gap and average total energy of CNTs alone and a mixture hematite with CNTs was performed before and after adsorption of hydrogen and nitrogen. From simulation the number of electrons were found to be doubled for hematite mixed with CNTs and average total energy was also increased as compared to similar parameter for CNTs without hematite. In conclusion the hematite with carbon nanotubes is preferred candidate for ammonia synthesis using magnetic induction method. Ammonia synthesis was done using MIM. Ammonia yield was quantified by Kjaldal method.
Surface plasmon polariton band gap structures: implications to integrated plasmonic circuits
DEFF Research Database (Denmark)
Bozhevolnyi, S. I.; Volkov, V. S.; Østergaard, John Erland;
2001-01-01
Conventional photonic band gap (PBG) structures are composed of regions with periodic modulation of refractive index that do not allow the propagation of electromagnetic waves in a certain interval of wavelengths, i.e., that exhibit the PBG effect. The PBG effect is essentially an interference ph...
A novel benzodipyrrolidone-based low band gap polymer for organic solar cells
DEFF Research Database (Denmark)
Yue, Wei; Huang, Xiaodong; Yuan, Jianyu;
2013-01-01
A low band gap polymer PBDPDP-DTP, with alternating benzodipyrrolidone (BDP) unit and dithienopyrrole, was synthesized and characterized. A PCE of 2.60%and a Voc of up to 0.74 V were realized in PSCs, which demonstrated the strong potential of BDP as the electron deficient unit in the design...... of donor–acceptor conjugated polymers for PSCs....
Photonic band gaps in materials with triply periodic surfaces and related tubular structures
Michielsen, K; Kole, JS
2003-01-01
We calculate the photonic band gap of triply periodic bicontinuous cubic structures and of tubular structures constructed from the skeletal graphs of triply periodic minimal surfaces. The effect of the symmetry and topology of the periodic dielectric structures on the existence and the characteristi
Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys.
Chen, Yanfeng; Xi, Jinyang; Dumcenco, Dumitru O; Liu, Zheng; Suenaga, Kazu; Wang, Dong; Shuai, Zhigang; Huang, Ying-Sheng; Xie, Liming
2013-05-28
Band gap engineering of atomically thin two-dimensional (2D) materials is the key to their applications in nanoelectronics, optoelectronics, and photonics. Here, for the first time, we demonstrate that in the 2D system, by alloying two materials with different band gaps (MoS2 and WS2), tunable band gap can be obtained in the 2D alloys (Mo(1-x)W(x)S(2) monolayers, x = 0-1). Atomic-resolution scanning transmission electron microscopy has revealed random arrangement of Mo and W atoms in the Mo(1-x)W(x)S(2) monolayer alloys. Photoluminescence characterization has shown tunable band gap emission continuously tuned from 1.82 eV (reached at x = 0.20) to 1.99 eV (reached at x = 1). Further, density functional theory calculations have been carried out to understand the composition-dependent electronic structures of Mo(1-x)W(x)S(2) monolayer alloys.
Photonic band gap structures for long-range surface plasmon polaritons
DEFF Research Database (Denmark)
Bozhevolnyi, Sergey I.; Boltasseva, Alexandra; Søndergaard, Thomas;
2005-01-01
-size thickness variations result in the pronounced band gap effect, and obtain very good agreement between measured and simulated (transmission and reflection) spectra. This effect is exploited to realize a compact wavelength add-drop filter with the bandwidth of ~20 nm centered at 1550 nm. The possibilities...
DEFF Research Database (Denmark)
Carlé, Jon Eggert; Jørgensen, Mikkel; Manceau, Matthieu;
2011-01-01
We investigate a family of low band-gap polymers based on the common acceptor moiety 2,3-bis-(3-octyloxyphenyl)quinoxaline (Q) combined with thiophene (T) or the fused thiophene systems: benzo[2,1-b:3,4-b′]-dithiophene (BDT) or dithieno[3,2-b,2′,3′-d]-thiophene (DTT). The photochemical stability ...
OPTICAL BAND GAP AND CONDUCTIVITY MEASUREMENTS OF POLYPYRROLE-CHITOSAN COMPOSITE THIN FILMS
Institute of Scientific and Technical Information of China (English)
Mahnaz M.Abdi; H.N.M.Ekramul Mahmud; Luqman Chuah Abdullah; Anuar Kassim; Mohamad Zaki Ab.Rahman; Josephine Liew Ying Chyi
2012-01-01
Electrical conductivity and optical properties of polypyrrole-chitosan (PPy-CHI) conducting polymer composites have been investigated to determine the optical transition characteristics and energy band gap of composite films.The two electrode method and Ⅰ-Ⅴ characteristic technique were used to measure the conductivity of the PPy-CHI thin films,and the optical band gap was obtained from their ultraviolet absorption edges.Depending upon experimental parameter,the optical band gap (Eg) was found within 1.30-2.32 eV as estimated from optical absorption data.The band gap of the composite films decreased as the CHI content increased.The room temperature electrical conductivity of PPy-CHI thin films was found in the range of 5.84 × 10-7-15.25 × 10-7 S.cm-1 depending on the chitosan content.The thermogravimetry analysis (TGA)showed that the CHI can improve the thermal stability of PPy-CHI composite films.
Band gap engineering in penta-graphene by substitutional doping: first-principles calculations
Berdiyorov, G. R.; Dixit, G.; Madjet, M. E.
2016-11-01
Using density functional theory, we study the structure, electronic properties and partial charges of a new carbon allotrope—penta-graphene (PG)—substitutionally doped by Si, B and N. We found that the electronic bandgap of PG can be tuned down to 0.2 eV due to carbon substitutions. However, the value of the band gap depends on the type and location of the dopants. For example, the strongest reduction of the band gap is obtained for Si substitutions on the top (bottom) plane of PG, whereas the substitution in the middle plane of PG has a smaller effect on the band gap of the material. Surface termination with fluorine and hydroxyl groups results in an increase of the band gap together with considerable changes in electronic and atomic partial charge distribution in the system. Our findings, which are robust against the use of different exchange-correlation functionals, indicate the possibility of tuning the bandgap of the material to make it suitable for optoelectronic and photovoltaic applications.
Mittal, Mona; Jana, Atanu; Sarkar, Sagar; Mahadevan, Priya; Sapra, Sameer
2016-08-18
A few approaches have been employed to tune the band gap of colloidal organic-inorganic trihalide perovskites (OTPs) nanocrystals by changing the halide anion. However, to date, there is no report of electronic structure tuning of perovskite NCs upon changing the organic cation. We report here, for the first time, the room temperature colloidal synthesis of (EA)x(MA)1-xPbBr3 nanocrystals (NCs) (where, x varies between 0 and 1) to tune the band gap of hybrid organic-inorganic lead perovskite NCs from 2.38 to 2.94 eV by varying the ratio of ethylammonium (EA) and methylammonium (MA) cations. The tuning of band gap is confirmed by electronic structure calculations within density functional theory, which explains the increase in the band gap upon going toward larger "A" site cations in APbBr3 NCs. The photoluminescence quantum yield (PLQY) of these NCs lies between 5% to 85% and the average lifetime falls in the range 1.4 to 215 ns. A mixture of MA cations and its higher analog EA cations provide a versatile tool to tune the structural as well as optoelectronic properties of perovskite NCs.
Effects of weak nonlinearity on dispersion relations and frequency band-gaps of periodic structures
DEFF Research Database (Denmark)
Sorokin, Vladislav; Thomsen, Jon Juel
2015-01-01
The analysis of the behaviour of linear periodic structures can be traced back over 300 years, to Sir Isaac Newton, and still attracts much attention. An essential feature of periodic struc-tures is the presence of frequency band-gaps, i.e. frequency ranges in which waves cannot propagate...
MoS2-WSe2 Hetero Bilayer: Possibility of Mechanical Strain Induced Band Gap Engineering
Sharma, Munish; Kumar, Ashok; Ahluwalia, P. K.
2014-03-01
The tunability of band gap in two-dimensional (2D) hetero-bilayers of MoS2-WSe2 with applied mechanical strains (in-plane and out-of-plane) in two different types of stackings (AA and AB) have been investigated in the framework of density functional theory (DFT). The in-plane biaxial tensile strain is found to reduce electronic band gap monotonically and rendered considered bilayer into metal at 6% of applied strain. The transition pressure required for complete semiconductor-to-metal transition is found to be of 7.89 GPa while tensile strength of the reported hetero-bilayer has been calculated 10 GPa at 25% strain. In case of vertical compression strain, 16 GPa pressure has been calculated for complete semiconductor-to-metal transition. The band-gap deformation potentials and effective masses (electron and hole) have been found to posses strong dependence on the type of applied strain. Such band gap engineering in controlled manner (internal control by composition and external control by applied strain) makes the considered hetero-bilayer as a strong candidate for the application in variety of nano scale devices.
H-shaped oligothiophenes with low band gaps and amphoteric redox properties
Luo, Jing
2010-12-17
H-shaped bridged oligothiophenes HT-1 and HT-2 were synthesized by two different approaches. Different from normal oligothiophenes, HT-1 and HT-2 showed low band gaps and amphoteric redox behaviors due to intramolecular charge transfer, which is further supported by time-dependent DFT calculations. © 2010 American Chemical Society.
Nanoscale mapping of optical band gaps using monochromated electron energy loss spectroscopy
Zhan, W.; Granerød, C. S.; Venkatachalapathy, V.; Johansen, K. M. H.; Jensen, I. J. T.; Kuznetsov, A. Yu; Prytz, Ø.
2017-03-01
Using monochromated electron energy loss spectroscopy in a probe-corrected scanning transmission electron microscope we demonstrate band gap mapping in ZnO/ZnCdO thin films with a spatial resolution below 10 nm and spectral precision of 20 meV.
Phononic band gaps and vibrations in one- and two-dimensional mass-spring structures
DEFF Research Database (Denmark)
Jensen, Jakob Søndergaard
2003-01-01
The vibrational response of finite periodic lattice structures subjected to periodic loading is investigated. Special attention is devoted to the response in frequency ranges with gaps in the band structure for the corresponding infinite periodic lattice. The effects of boundaries, viscous dampin...
Optical study of the band structure of wurtzite GaP nanowires
Assali, S.
2016-07-25
We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.
Steric engineering of metal-halide perovskites with tunable optical band gaps.
Filip, Marina R; Eperon, Giles E; Snaith, Henry J; Giustino, Feliciano
2014-12-15
Owing to their high energy-conversion efficiency and inexpensive fabrication routes, solar cells based on metal-organic halide perovskites have rapidly gained prominence as a disruptive technology. An attractive feature of perovskite absorbers is the possibility of tailoring their properties by changing the elemental composition through the chemical precursors. In this context, rational in silico design represents a powerful tool for mapping the vast materials landscape and accelerating discovery. Here we show that the optical band gap of metal-halide perovskites, a key design parameter for solar cells, strongly correlates with a simple structural feature, the largest metal-halide-metal bond angle. Using this descriptor we suggest continuous tunability of the optical gap from the mid-infrared to the visible. Precise band gap engineering is achieved by controlling the bond angles through the steric size of the molecular cation. On the basis of these design principles we predict novel low-gap perovskites for optimum photovoltaic efficiency, and we demonstrate the concept of band gap modulation by synthesising and characterising novel mixed-cation perovskites.
Energy Dependence and Scaling Property of Localization Length near a Gapped Flat Band
Ge, Li
2015-01-01
Using a tight-binding model for a one-dimensional Lieb lattice, we show that the localization length near a gapped flat band behaves differently from the typical Urbach tail in a band gap: instead of reducing monotonically as the energy E moves away from the flat band energy E_{FB}, the presence of the flat band causes a nonmonotonic energy dependence of the localization length. This energy dependence follows a scaling property when the energy is within the spread (W) of uniformly distributed diagonal disorder, i.e. the localization length is only a function of (E-E_{FB})/W. Several other lattices are compared to distinguish the effect of the flat band on the localization length, where we eliminate, shift, or duplicate the flat band, without changing the dispersion relations of other bands. Using the top right element of the Green's matrix, we derive an analytical relation between the density of states and the localization length, which shines light on these properties of the latter, including a summation rul...
Investigation of the Band Structure of Graphene-Based Plasmonic Photonic Crystals
Directory of Open Access Journals (Sweden)
Pingping Qiu
2016-09-01
Full Text Available In this paper, one-dimensional (1D and two-dimensional (2D graphene-based plasmonic photonic crystals (PhCs are proposed. The band structures and density of states (DOS have been numerically investigated. Photonic band gaps (PBGs are found in both 1D and 2D PhCs. Meanwhile, graphene-based plasmonic PhC nanocavity with resonant frequency around 175 THz, is realized by introducing point defect, where the chemical potential is from 0.085 to 0.25 eV, in a 2D PhC. Also, the bending wvaguide and the beam splitter are realized by introducing the line defect into the 2D PhC.
Probe spectrum of a four-level atom in a double-band photonic crystal
Institute of Scientific and Technical Information of China (English)
Wen Qing-Bo; Wang Jian; Zhang Han-Zhuang
2004-01-01
In this paper, the probe absorption spectrum of an atom in a double-band photonic crystal have been studied. In the modes, we assume that one of the two atomic transitions in a A-type atomic system is interacting with free vacuum modes, and another transition is interacting with free vacuum modes, isotropic photonic band gap (PBG) modes and anisotropic PBG modes, separately. The effects of the fine structure of the atomic lower levels on the probe absorption spectrum are investigated in detail in the three cases. The most interesting thing is that the two (four) transparencies at one (two) probe absorption peak(s), caused by the fine structure of the lower levels of an atom, are predicted in the case of isotropic PBG modes.
Spontaneous emission spectrum of a four-level atom in a double-band photonic crystal
Institute of Scientific and Technical Information of China (English)
Wang Jian; Yang Dong; Zhang Han-Zhang
2005-01-01
The spontaneous emission spectrum from a four-level atom in a double-band photonic crystal has been investigated.We use the model which assumes three atomic transitions. One of the transitions interacts with the free vacuum modes,and the other two transitions couple to the modes of the isotropic photonic band gap (PBG), the anisotropic PBG and another free vacuum. The effects of the fine structure of the lower levels on the spontaneous emission spectrum of an atom are investigated in detail in the three cases. New features of four (two) transparencies with two (one) spontaneous emission peaks, resulting from the fine structure of the lower levels of an atom, are predicted in the case of isotropic PBG modes.
Investigation of the Band Structure of Graphene-Based Plasmonic Photonic Crystals
Qiu, Pingping; Qiu, Weibin; Lin, Zhili; Chen, Houbo; Tang, Yixin; Wang, Jia-Xian; Kan, Qiang; Pan, Jiao-Qing
2016-01-01
In this paper, one-dimensional (1D) and two-dimensional (2D) graphene-based plasmonic photonic crystals (PhCs) are proposed. The band structures and density of states (DOS) have been numerically investigated. Photonic band gaps (PBGs) are found in both 1D and 2D PhCs. Meanwhile, graphene-based plasmonic PhC nanocavity with resonant frequency around 175 THz, is realized by introducing point defect, where the chemical potential is from 0.085 to 0.25 eV, in a 2D PhC. Also, the bending wvaguide and the beam splitter are realized by introducing the line defect into the 2D PhC.
High-Pressure Crystal Structure, Lattice Vibrations, and Band Structure of BiSbO4.
Errandonea, Daniel; Muñoz, Alfonso; Rodríguez-Hernández, Placida; Gomis, Oscar; Achary, S Nagabhusan; Popescu, Catalin; Patwe, Sadeque J; Tyagi, Avesh K
2016-05-16
The high-pressure crystal structure, lattice-vibrations, and electronic band structure of BiSbO4 were studied by ab initio simulations. We also performed Raman spectroscopy, infrared spectroscopy, and diffuse-reflectance measurements, as well as synchrotron powder X-ray diffraction. High-pressure X-ray diffraction measurements show that the crystal structure of BiSbO4 remains stable up to at least 70 GPa, unlike other known MTO4-type ternary oxides. These experiments also give information on the pressure dependence of the unit-cell parameters. Calculations properly describe the crystal structure of BiSbO4 and the changes induced by pressure on it. They also predict a possible high-pressure phase. A room-temperature pressure-volume equation of state is determined, and the effect of pressure on the coordination polyhedron of Bi and Sb is discussed. Raman- and infrared-active phonons were measured and calculated. In particular, calculations provide assignments for all the vibrational modes as well as their pressure dependence. In addition, the band structure and electronic density of states under pressure were also calculated. The calculations combined with the optical measurements allow us to conclude that BiSbO4 is an indirect-gap semiconductor, with an electronic band gap of 2.9(1) eV. Finally, the isothermal compressibility tensor for BiSbO4 is given at 1.8 GPa. The experimental (theoretical) data revealed that the direction of maximum compressibility is in the (0 1 0) plane at ∼33° (38°) to the c-axis and 47° (42°) to the a-axis. The reliability of the reported results is supported by the consistency between experiments and calculations.
DEFF Research Database (Denmark)
Zhukovsky, Sergei; Orlov, Alexey A.; Babicheva, Viktoriia E.;
2014-01-01
) on a larger, wavelength scale, the propagation of volume plasmon polaritons in the resulting multiscale hyperbolic metamaterials is subject to photonic-band-gap phenomena. A great degree of control over such plasmons can be exerted by varying the superstructure geometry. When this geometry is periodic, stop...... bands due to Bragg reflection form within the volume plasmonic band. When a cavity layer is introduced in an otherwise periodic superstructure, resonance peaks of the Fabry-Perot nature are present within the stop bands. More complicated superstructure geometries are also considered. For example......, fractal Cantor-like multiscale metamaterials are found to exhibit characteristic self-similar spectral signatures in the volume plasmonic band. Multiscale hyperbolic metamaterials are shown to be a promising platform for large-wave-vector bulk plasmonic waves, whether they are considered for use as a kind...
Energy Technology Data Exchange (ETDEWEB)
Asai, Hidehiro, E-mail: hd-asai@aist.go.jp [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ota, Yukihiro [CCSE, Japan Atomic Energy Agency, Kashiwa, Chiba 277-8587 (Japan); Kawabata, Shiro [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Nori, Franco [CEMS, RIKEN, Wako-shi, Saitama 351-0198 (Japan); Physics Department, University of Michigan, Ann Arbor, MI 48109-1040 (United States)
2014-09-15
Highlights: • We study MQT in Josephson junctions composed of multi-gap superconductors. • We derive a formula of the MQT escape rate for multiple phase differences. • We investigate the effect of inter-band phase fluctuation on MQT. • The MQT escape rate is significantly enhanced by the inter-band phase fluctuation. - Abstract: We theoretically investigate macroscopic quantum tunneling (MQT) in a hetero Josephson junction formed by a conventional single-gap superconductor and a multi-gap superconductor. In such Josephson junctions, phase differences for each tunneling channel are defined, and the fluctuation of the relative phase differences appear which is referred to as Josephson–Leggett’s mode. We take into account the effect of the fluctuation in the tunneling process and calculate the MQT escape rate for various junction parameters. We show that the fluctuation of relative phase differences drastically enhances the escape rate.
Effect of Microstructure of TiO2 Thin Films on Optical Band Gap Energy
Institute of Scientific and Technical Information of China (English)
TIAN Guang-Lei; HE Hong-Bo; SHAO Jian-Da
2005-01-01
@@ TiO2 coatings are prepared on fused silica with conventional electron beam evaporation deposition. After annealed at different temperatures for four hours, the spectra and XRD patterns of TiO2 thin film are obtained. XRD patterns reveal that only anatase phase can be observed in TiO2 coatings regardless of the different annealing temperatures, and with the increasing annealing temperature, the grain size gradually increases. The relationship between the energy gap and microstructure of anatase is determined and discussed. The quantum confinement effect is observed that with the increasing grain size of TiO2 thin film, the band gap energy shifts from 3.4eV to 3.21 eV. Moreover, other possible influence of the TiO2 thin-film microstructure, such as surface roughness and thin film absorption, on band gap energy is also expected.
Can photonic crystals be homogenized in higher bands?
Markel, Vadim A
2015-01-01
We consider the conditions under which photonic crystals (PCs) can be viewed as electromagnetically homogeneous at frequencies in the higher photonic bands and, in particular, near the higher-order $\\Gamma$-points. We show that the observation that a purely real isofrequency line of the PC is close to a mathematical circle is insufficient for establishing homogenizability. Complex dispersion points must be included into consideration even in the case of strictly non-absorbing materials. By applying a more careful analysis to the dispersion relations and complex isofrequency lines, we have found that two-dimensional PCs with $C_4$ and $C_6$ symmetries are not electromagnetically homogeneous in the higher photonic bands in spite of the fact that, at some particular frequencies, the real isofrequency lines of these PCs can be circular with high precision.
Mini-stop bands in single heterojunction photonic crystal waveguides
Shahid, N.
2013-01-01
Spectral characteristics of mini-stop bands (MSB) in line-defect photonic crystal (PhC) waveguides and in heterostructure PhC waveguides having one abrupt interface are investigated. Tunability of the MSB position by air-fill factor heterostructure PhC waveguides is utilized to demonstrate different filter functions, at optical communication wavelengths, ranging from resonance-like to wide band pass filters with high transmission. The narrowest filter realized has a resonance-like transmission peak with a full width at half maximum of 3.4 nm. These devices could be attractive for coarse wavelength selection (pass and drop) and for sensing applications. 2013 Copyright 2013 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License.
Detailed study of flat bands appearing in metallic photonic crystals
Energy Technology Data Exchange (ETDEWEB)
Vala, Ali Soltani [Department of Solid State Physics, Faculty of Physics, University of Tabriz, PO Box 51665-163, Tabriz (Iran, Islamic Republic of); Research Institute for Applied Physics and Astronomy, University of Tabriz, PO Box 51665-163, Tabriz (Iran, Islamic Republic of); Sedghi, Aliasghar; Hosseini, Naser [Department of Solid State Physics, Faculty of Physics, University of Tabriz, PO Box 51665-163, Tabriz (Iran, Islamic Republic of); Kalafi, Manouchehr [Department of Solid State Physics, Faculty of Physics, University of Tabriz, PO Box 51665-163, Tabriz (Iran, Islamic Republic of); Research Institute for Applied Physics and Astronomy, University of Tabriz, PO Box 51665-163, Tabriz (Iran, Islamic Republic of); Excellence Centre for Photonics, University of Tabriz, PO Box 51665-163, Tabriz (Iran, Islamic Republic of)
2011-09-15
It has been difficult to compute the band structures of metallic photonic crystals for H-polarization. The existence of surface plasmon modes is the major reason for difficulty due to the localized nature of these modes. In this study, by virtue of the efficiency of the newly developed Dirichlet-to-Neumann map method, we are able to investigate the details of the flat bands in a two dimensional square lattice with metallic cylinders. We have obtained fine band structure for H polarization around the flat band region which has not been reported to the best of our knowledge. Our numerical results show that for the frequency around the surface plasmon, the modes are highly localized at the interface of the cylindrical metallic rods and air background and also by approaching the modes to the surface plasmon frequency the localization length decreases and the number of field's nodes increases considerably. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Optofluidic tuning of photonic crystal band edge lasers
DEFF Research Database (Denmark)
Bernal, Felipe; Christiansen, Mads Brøkner; Gersborg-Hansen, Morten;
2007-01-01
We demonstrate optofluidic tuning of polymer photonic crystal band edge lasers with an imposed rectangular symmetry. The emission wavelength depends on both lattice constant and cladding refractive index. The emission wavelength is shown to change 1 nm with a cladding refractive index change of 10......−2. The rectangular symmetry modification alters the emission characteristics of the devices and the relative emission intensities along the symmetry axes depend on cladding refractive index, suggesting a sensor concept based on detection of intensity rather than wavelength....
Vibration band gaps for elastic metamaterial rods using wave finite element method
Nobrega, E. D.; Gautier, F.; Pelat, A.; Dos Santos, J. M. C.
2016-10-01
Band gaps in elastic metamaterial rods with spatial periodic distribution and periodically attached local resonators are investigated. New techniques to analyze metamaterial systems are using a combination of analytical or numerical method with wave propagation. One of them, called here wave spectral element method (WSEM), consists of combining the spectral element method (SEM) with Floquet-Bloch's theorem. A modern methodology called wave finite element method (WFEM), developed to calculate dynamic behavior in periodic acoustic and structural systems, utilizes a similar approach where SEM is substituted by the conventional finite element method (FEM). In this paper, it is proposed to use WFEM to calculate band gaps in elastic metamaterial rods with spatial periodic distribution and periodically attached local resonators of multi-degree-of-freedom (M-DOF). Simulated examples with band gaps generated by Bragg scattering and local resonators are calculated by WFEM and verified with WSEM, which is used as a reference method. Results are presented in the form of attenuation constant, vibration transmittance and frequency response function (FRF). For all cases, WFEM and WSEM results are in agreement, provided that the number of elements used in WFEM is sufficient to convergence. An experimental test was conducted with a real elastic metamaterial rod, manufactured with plastic in a 3D printer, without local resonance-type effect. The experimental results for the metamaterial rod with band gaps generated by Bragg scattering are compared with the simulated ones. Both numerical methods (WSEM and WFEM) can localize the band gap position and width very close to the experimental results. A hybrid approach combining WFEM with the commercial finite element software ANSYS is proposed to model complex metamaterial systems. Two examples illustrating its efficiency and accuracy to model an elastic metamaterial rod unit-cell using 1D simple rod element and 3D solid element are
Effect of Sn on the optical band gap determined using absorption spectrum fitting method
Energy Technology Data Exchange (ETDEWEB)
Heera, Pawan, E-mail: sramanb70@mailcity.com [Department of Physics, Himachal Pradesh University, Shimla, INDIA, 171005 (India); Govt. College Amb, Himachal Pradesh, INDIA,177203 (India); Kumar, Anup, E-mail: kumar.anup.sml@gmail.com [Department of Physics, Himachal Pradesh University, Shimla, INDIA, 171005 (India); Physics Department, Govt. College, Kullu, H. P., INDIA, 175101 (India); Sharma, Raman, E-mail: pawanheera@yahoo.com [Department of Physics, Himachal Pradesh University, Shimla, INDIA, 171005 (India)
2015-05-15
We report the preparation and the optical studies on tellurium rich glasses thin films. The thin films of Se{sub 30}Te{sub 70-x} Sn{sub x} system for x= 0, 1.5, 2.5 and 4.5 glassy alloys prepared by melt quenching technique are deposited on the glass substrate using vacuum thermal evaporation technique. The analysis of absorption spectra in the spectral range 400nm–4000 nm at room temperature obtained from UV-VIS-NIR spectrophotometer [Perkin Elmer Lamda-750] helps us in the optical characterization of the thin films under study. The absorption spectrum fitting method is applied by using the Tauc’s model for estimating the optical band gap and the width of the band tail of the thin films. The optical band gap is calculated and is found to decrease with the Sn content.
Solid-State Nanopore Confinement for Band Gap Engineering of Metal-Halide Perovskites
Demchyshyn, Stepan; Groiss, Heiko; Heilbrunner, Herwig; Ulbricht, Christoph; Apaydin, Dogukan; Rütt, Uta; Bertram, Florian; Hesser, Günter; Scharber, Markus; Nickel, Bert; Sariciftci, Niyazi Serdar; Bauer, Siegfried; Głowacki, Eric Daniel; Kaltenbrunner, Martin
2016-01-01
Tuning the band gap of semiconductors via quantum size effects launched a technological revolution in optoelectronics, advancing solar cells, quantum dot light-emitting displays, and solid state lasers. Next generation devices seek to employ low-cost, easily processable semiconductors. A promising class of such materials are metal-halide perovskites, currently propelling research on emerging photovoltaics. Their narrow band emission permits very high colour purity in light-emitting devices and vivid life-like displays paired with low-temperature processing through printing-compatible methods. Success of perovskites in light-emitting devices is conditional upon finding reliable strategies to obtain tunability of the band gap. So far, colour can be tuned chemically by mixed halide stoichiometry, or by synthesis of colloidal particles. Here we introduce a general strategy of controlling shape and size of perovskite nanocrystallites (less than 10 nm) in domains that exhibit strong quantum size effects. Without ma...
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying
DEFF Research Database (Denmark)
Canulescu, Stela; Rechendorff, K.; Borca, C. N.;
2014-01-01
The band structure of pure and Ti-alloyed anodic aluminum oxide has been examined as a function of Ti concentration varying from 2 to 20 at. %. The band gap energy of Ti-alloyed anodic Al oxide decreases with increasing Ti concentration. X-ray absorption spectroscopy reveals that Ti atoms...... are not located in a TiO2 unit in the oxide layer, but rather in a mixed Ti-Al oxide layer. The optical band gap energy of the anodic oxide layers was determined by vacuum ultraviolet spectroscopy in the energy range from 4.1 to 9.2 eV (300–135 nm). The results indicate that amorphous anodic Al2O3 has a direct...
DEFF Research Database (Denmark)
Pandey, Mohnish; Jacobsen, Karsten Wedel; Thygesen, Kristian Sommer
2016-01-01
Organic−inorganic halide perovskites have proven highly successful for photovoltaics but suffer from low stability, which deteriorates their performance over time. Recent experiments have demonstrated that low dimensional phases of the hybrid perovskites may exhibit improved stability. Here we...... report first-principles calculations for isolated monolayers of the organometallic halide perovskites (C4H9NH3)2MX2Y2, where M = Pb, Ge, Sn and X,Y = Cl, Br, I. The band gaps computed using the GLLB-SC functional are found to be in excellent agreement with experimental photoluminescence data...... for the already synthesized perovskites. Finally, we study the effect of different defects on the band structure. We find that the most common defects only introduce shallow or no states in the band gap, indicating that these atomically thin 2D perovskites are likely to be defect tolerant....
Directory of Open Access Journals (Sweden)
P. Kovacs
2010-04-01
Full Text Available The paper is focused on the automated design and optimization of electromagnetic band gap structures suppressing the propagation of surface waves. For the optimization, we use different global evolutionary algorithms like the genetic algorithm with the single-point crossover (GAs and the multi-point (GAm one, the differential evolution (DE and particle swarm optimization (PSO. The algorithms are mutually compared in terms of convergence velocity and accuracy. The developed technique is universal (applicable for any unit cell geometry. The method is based on the dispersion diagram calculation in CST Microwave Studio (CST MWS and optimization in Matlab. A design example of a mushroom structure with simultaneous electromagnetic band gap properties (EBG and the artificial magnetic conductor ones (AMC in the required frequency band is presented.
Tuning the Band Gap of Cu₂ZnSn(S,Se)₄ Thin Films via Lithium Alloying.
Yang, Yanchun; Kang, Xiaojiao; Huang, Lijian; Pan, Daocheng
2016-03-02
Alkali metal doping plays a crucial role in fabricating high-performance Cu(In,Ga)(S,Se)2 and Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells. In this study, we report the first experimental observation and characterizations of the alloyed Li(x)Cu(2-x)ZnSn(S,Se)4 thin films. It is found that Cu(+) ions in Cu2ZnSn(S,Se)4 thin films can be substituted with Li(+) ions, forming homogeneous Li(x)Cu(2-x)ZnSn(S,Se)4 (0 ≤ x ≤ 0.29) alloyed thin films. Consequently, the band gap, conduction band minimum, and valence band maximum of Li(x)Cu(2-x)ZnSn(S,Se)4 thin films are profoundly affected by Li/Cu ratios. The band alignment at the Li(x)Cu(2-x)ZnSn(S,Se)4/CdS interface can be tuned by changing the Li/Cu ratio. We found that the photovoltaic parameters of the Li(x)Cu(2-x)ZnSn(S,Se)4 solar cell devices are strongly influenced by the Li/Cu ratios. Besides, the lattice constant, carrier concentration, and crystal growth of Li(x)Cu(2-x)ZnSn(S,Se)4 thin films were studied in detail.
Energy Technology Data Exchange (ETDEWEB)
Wang, Yaqin [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Tang, Wu, E-mail: tang@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhang, Lan [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Zhao, Junliang [Shanghai Juntech Co. Ltd., 1378 Xingxian Road, Shanghai 201815 (China)
2014-08-28
Ga-doped ZnO (GZO) thin films were deposited on glass substrates by a radio frequency magnetron sputtering technique. The optical properties of the deposited GZO films were evaluated using an optical transmission measurement. The optical band gap increased from 3.32 eV to 3.45 eV with the increasing carrier density from 2.0 × 10{sup 20} cm{sup −3} to 3.24 × 10{sup 20} cm{sup −3}. Based on the experimental results, the optical band gap as a function of carrier density is systematically investigated with four available theoretical models taken into consideration. The blueshift of the optical band gap in GZO films can be well interpreted with a complex model which combines the Burstein–Moss effect, the band gap renormalization effect and the nonparabolic nature of conduction band. In addition, the BM contribution is almost offset by the BGR effect in both conduction band and valence band due to the approximate equality between electron and hole effective masses in GZO films with a nonparabolic conduction band. The tunability of optical band gap in GZO thin films by carrier density offers a number of potential advantages in the development of semiconductor optoelectronic devices. - Highlights: • The effects of electron concentration on optical band gap were analyzed. • The measured optical band gap corresponded well with the calculated ones. • The Burstein–Moss (BM) and band gap renormalization (BGR) effects were considered. • Nonparabolic conduction band parameters were used in theoretical analysis. • The BM effect was offset by the BGR effect in both conduction band and valence band.
Photonic band gap of a graphene-embedded quarter-wave stack
Fan, Yuancheng; Li, Hongqiang; Chen, Hong; Soukoulis, Costas M
2013-01-01
Here, we present a mechanism for tailoring the photonic band structure of a quarter-wave stack without changing its physical periods by embedding conductive sheets. Graphene is utilized and studied as a realistic, two-dimensional conductive sheet. In a graphene-embedded quarter-wave stack, the synergic actions of Bragg scattering and graphene conductance contributions open photonic gaps at the center of the reduced Brillouin zone, that nonexistent in conventional quarter-wave stacks. Such photonic gaps show giant, loss-independent density of optical states at the fixed lower-gap-edges, of even-multiple characteristic frequency of the quarter-wave stack. The novel conductive sheets induced photonic gaps provide a new platform for the enhancement of light-matter interactions.
Energy Technology Data Exchange (ETDEWEB)
Vos, M. [Atomic and Molecular Physics Laboratories, Research School of Physics and Engineering, Australian National University, Canberra ACT (Australia); Marmitt, G. G. [Atomic and Molecular Physics Laboratories, Research School of Physics and Engineering, Australian National University, Canberra ACT (Australia); Instituto de Fisica da Universidade Federal do Rio Grande do Sul, Avenida Bento Goncalves 9500, 91501-970 Porto Alegre, RS (Brazil); Finkelstein, Y. [Nuclear Research Center — Negev, Beer-Sheva 84190 (Israel); Moreh, R. [Physics Department, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel)
2015-09-14
Reflection electron energy loss spectra from some insulating materials (CaCO{sub 3}, Li{sub 2}CO{sub 3}, and SiO{sub 2}) taken at relatively high incoming electron energies (5–40 keV) are analyzed. Here, one is bulk sensitive and a well-defined onset of inelastic excitations is observed from which one can infer the value of the band gap. An estimate of the band gap was obtained by fitting the spectra with a procedure that includes the recoil shift and recoil broadening affecting these measurements. The width of the elastic peak is directly connected to the mean kinetic energy of the atom in the material (Doppler broadening). The experimentally obtained mean kinetic energies of the O, C, Li, Ca, and Si atoms are compared with the calculated ones, and good agreement is found, especially if the effect of multiple scattering is taken into account. It is demonstrated experimentally that the onset of the inelastic excitation is also affected by Doppler broadening. Aided by this understanding, we can obtain a good fit of the elastic peak and the onset of inelastic excitations. For SiO{sub 2}, good agreement is obtained with the well-established value of the band gap (8.9 eV) only if it is assumed that the intensity near the edge scales as (E − E{sub gap}){sup 1.5}. For CaCO{sub 3}, the band gap obtained here (7 eV) is about 1 eV larger than the previous experimental value, whereas the value for Li{sub 2}CO{sub 3} (7.5 eV) is the first experimental estimate.
An operational method to model carrier degeneracy and band gap narrowing
Adler, M. S.
1983-05-01
In this paper an operational method of modeling heavily doped silicon to include effects of carrier degeneracy and band gap narrowing is presented. The issue of carier degeneracy on majority carrier flow is discussed together with the question of the ambiguity in the electrostatic potential associated with identifying which band edge is narrowed. Using an exact numerical analysis of a bipolar transistor as an example it is shown that when modeling carrier flow in quasi-neutral regions, classical statistics can be used for the majority carrier and the ambiguity in the electrostatic potential can be ignored. Overall, it is shown that for the same quasi-neutral heavily doped regions the effects of carrier degeneracy and band gap narrowing are accurately modeled within the context of classical statistics by adding the quasi field term to the minority carrier transport equation that is based on the commonly used "band gap narrowing" data available from measurements of minority carrier transport in heavily doped regions. While it is recognized that this is not rigorously correct the result of this paper is to establish the accuracy for the operational method most commonly used to model heavy doping effects.
Enhanced thermoelectric performance in the Rashba semiconductor BiTeI through band gap engineering.
Wu, Lihua; Yang, Jiong; Zhang, Tiansong; Wang, Shanyu; Wei, Ping; Zhang, Wenqing; Chen, Lidong; Yang, Jihui
2016-03-01
Rashba semiconductors are of great interest in spintronics, superconducting electronics and thermoelectrics. Bulk BiTeI is a new Rashba system with a giant spin-split band structure. 2D-like thermoelectric response has been found in BiTeI. However, as optimizing the carrier concentration, the bipolar effect occurs at elevated temperature and deteriorates the thermoelectric performance of BiTeI. In this paper, band gap engineering in Rashba semiconductor BiTeI through Br-substitution successfully reduces the bipolar effect and improves the thermoelectric properties. By utilizing the optical absorption and Burstein-Moss-effect analysis, we find that the band gap in Rashba semiconductor BiTeI increases upon bromine substitution, which is consistent with theoretical predictions. Bipolar transport is mitigated due to the larger band gap, as the thermally-activated minority carriers diminish. Consequently, the Seebeck coefficient keeps increasing with a corresponding rise in temperature, and thermoelectric performance can thus be enhanced with a ZT = 0.5 at 570 K for BiTeI0.88Br0.12.
Band gap modulation of transition-metal dichalcogenide MX2 nanosheets by in-plane strain
Su, Xiangying; Ju, Weiwei; Zhang, Ruizhi; Guo, Chongfeng; Yong, Yongliang; Cui, Hongling; Li, Xiaohong
2016-10-01
The electronic properties of quasi-two-dimensional honeycomb structures of MX2 nanosheets (M=Mo, W and X=S, Se) subjected to in-plane biaxial strain have been investigated using first-principles calculations. We demonstrate that the band gap of MX2 nanosheets can be widely tuned by applying tensile or compressive strain, and these ultrathin materials undergo a universal reversible semiconductor-metal transition at a critical strain. Compared to WX2, MoX2 need a smaller critical tensile strain for the band gap close, and MSe2 need a smaller critical compressive strain than MS2. Taking bilayer MoS2 as an example, the variation of the band structures was studied and the semiconductor-metal transition involves a slightly different physical mechanism between tensile and compressive strain. The ability to tune the band gap of MX2 nanosheets in a controlled fashion over a wide range of energy opens up the possibility for its usage in a range of application.
Enhanced thermoelectric performance in the Rashba semiconductor BiTeI through band gap engineering
Wu, Lihua; Yang, Jiong; Zhang, Tiansong; Wang, Shanyu; Wei, Ping; Zhang, Wenqing; Chen, Lidong; Yang, Jihui
2016-03-01
Rashba semiconductors are of great interest in spintronics, superconducting electronics and thermoelectrics. Bulk BiTeI is a new Rashba system with a giant spin-split band structure. 2D-like thermoelectric response has been found in BiTeI. However, as optimizing the carrier concentration, the bipolar effect occurs at elevated temperature and deteriorates the thermoelectric performance of BiTeI. In this paper, band gap engineering in Rashba semiconductor BiTeI through Br-substitution successfully reduces the bipolar effect and improves the thermoelectric properties. By utilizing the optical absorption and Burstein-Moss-effect analysis, we find that the band gap in Rashba semiconductor BiTeI increases upon bromine substitution, which is consistent with theoretical predictions. Bipolar transport is mitigated due to the larger band gap, as the thermally-activated minority carriers diminish. Consequently, the Seebeck coefficient keeps increasing with a corresponding rise in temperature, and thermoelectric performance can thus be enhanced with a ZT = 0.5 at 570 K for BiTeI0.88Br0.12.
Development of ultra-narrow gap welding with constrained arc by flux band
Institute of Scientific and Technical Information of China (English)
Zhu Liang; Zheng Shaoxian; Chen Jianhong
2006-01-01
Narrow gap welding has merits of lower residual stress and distortion, and superior mechanical properties of joints.A major problem of this process is the lack of fusion in sidewalls, hence many methods of weaving arc have been developed to increase heating effect of arc to the sidewalls. In this work, a new approach without weaving arc is attempted to ensure the penetration of sidewall, and ultra-narrow gap welding with the gap of less than 5 mm was executed successfully. In this approach, the width of gap is decreased further, so that the sidewalls are made within range of arc heating to obtain the enough heat. Inorder to prevent the arc from being attracted by sidewall and going up alongthe sidewalls, two pieces of flux bands consisting of the specified aggregates are adhered to the sidewalls to constrain the arc. In addition, when flux band being heated by the arc, slag and gases are formed to shield the arc and the weld pool. This technique was tested on the welding experiment of pipeline steel with thickness of 20 mm. The involved welding parameters were obtained, that is, the width of gap is 4 mm, the welding current 250 A, and the heat input 0. 5 k J/mm, the width of heat-affected zone is 1 - 2mm.
Tang, Qing; Bao, Jie; Li, Yafei; Zhou, Zhen; Chen, Zhongfang
2014-08-07
Density functional theory computations with dispersion corrections (DFT-D) were performed to investigate the dihalogen interactions and their effect on the electronic band structures of halogenated (fluorinated and chlorinated) BN bilayers and aligned halogen-passivated zigzag BN nanoribbons (BNNRs). Our results reveal the presence of considerable homo-halogen (FF and ClCl) interactions in bilayer fluoro (chloro)-BN sheets and the aligned F (Cl)-ZBNNRs, as well as substantial hetero-halogen (FCl) interactions in hybrid fluoro-BN/chloro-BN bilayer and F-Cl-ZBNNRs. The existence of interfacial dihalogen interactions leads to significant band-gap modifications for the studied BN nanosystems. Compared with the individual fluoro (chloro)-BN monolayers or pristine BNNRs, the gap reduction in bilayer fluoro-BN (B-FF-N array), hybrid fluoro-BN/chloro-BN bilayer (N-FCl-N array), aligned Cl-ZBNNRs (B-ClCl-N alignment), and hybrid F-Cl-ZBNNRs (B-FCl-N alignment) is mainly due to interfacial polarizations, while the gap narrowing in bilayer chloro-BN (N-ClCl-N array) is ascribed to the interfacial nearly-free-electron states. Moreover, the binding strengths and electronic properties of the interactive BN nanosheets and nanoribbons can be controlled by applying an external electric field, and extensive modulation from large-gap to medium-gap semiconductors, or even metals can be realized by adjusting the direction and strength of the applied electric field. This interesting strategy for band gap control based on weak interactions offers unique opportunities for developing BN nanoscale electronic devices.
Molla, Aniruddha; Sahu, Meenakshi; Hussain, Sahid
2016-05-01
Controlled shape and size with tuneable band gap (1.92-2.41 eV), nickel sulphide NPs was achieved in presence of thiourea or thioacetamide as sulphur sources with the variations of temperature and capping agents. Synthesized NPs were fully characterized by powder XRD, IR, UV-vis, DRS, FE-SEM, TEM, EDX, XPS, TGA and BET. Capping agent, temperature and sulphur sources have significant role in controlling the band gaps, morphology and surface area of NPs. The catalytic activities of NPs were tested for round the clock (light and dark) decomposition of crystal violet (CV), rhodamine B (RhB), methylene blue (MB), nile blue (NB) and eriochrome black T (EBT). Agitation speed, temperature, pH and ionic strength have significant role on its catalytic activities. The catalyst was found to generate reactive oxygen species (ROS) both in presence and absence of light which is responsible for the decomposition of dyes into small fractions, identified with ESI-mass spectra.
Zhukovsky, Sergei V; Babicheva, Viktoriia E; Lavrinenko, Andrei V; Sipe, J E
2013-01-01
We theoretically study the propagation of large-wavevector waves (volume plasmon polaritons) in multilayer hyperbolic metamaterials with two levels of structuring. We show that when the parameters of a subwavelength metal-dielectric multilayer ("substructure") are modulated ("superstructured") on a larger, wavelength scale, the propagation of volume plasmon polaritons in the resulting multiscale hyperbolic metamaterials is subject to photonic band gap phenomena. A great degree of control over such plasmons can be exerted by varying the superstructure geometry. When this geometry is periodic, stop bands due to Bragg reflection are shown to form within the volume plasmonic band. When a cavity layer is introduced in an otherwise periodic superstructure, resonance peaks of the Fabry-P\\'erot nature are shown to be present within the stop bands. More complicated superstructure geometries are also considered. For example, fractal Cantor-like multiscale metamaterials are found to exhibit characteristic self-similar s...
Low-frequency band gaps in chains with attached non-linear oscillators
DEFF Research Database (Denmark)
Lazarov, Boyan Stefanov; Jensen, Jakob Søndergaard
2007-01-01
in structures with periodic or random inclusions are located mainly in the high frequency range, as the wavelength has to be comparable with the distance between the alternating parts. Band gaps may also exist in structures with locally attached oscillators. In the linear case the gap is located around......The aim of this article is to investigate the wave propagation in one-dimensional chains with attached non-linear local oscillators by using analytical and numerical models. The focus is on the influence of non-linearities on the filtering properties of the chain in the low frequency range...
Image-potential band-gap narrowing at a metal/semiconductor interface
2001-01-01
GW approximation is used to systematically revisit the image-potential band-gap narrowing at metal/semiconductor interfaces proposed by Inkson in the 1970's. Here we have questioned how the narrowing as calculated from quasi-particle energy spectra for the jellium/Si interface depends on $r_s$ of the jellium. The gap narrowing is found to only weakly depend on $r_s$ (i.e., narrowing $\\simeq 0.3$ eV even for a large $r_s = 6)$. Hence we can turn to smaller polarizability in the semiconductor s...
Strong interaction of a transmon qubit with 1D band-gap medium
Liu, Yanbing; Sadri, Darius; Houck, Andrew; Bronn, Nicholas; Chow, Jerry; Gambetta, Jay
2015-03-01
The spontaneous emission of an atom will be enhanced or suppressed in a structured vacuum, commonly known as Purcell effect. Moreover, in a frequency gap medium, an atom-photon bound state is predicted to exist in the band gap, causing the localization of light. Here using the technology of circuit quantum electrodynamics, we experimentally explore this mechanism by fabricating a microwave step-impedance filter strongly coupled to a transmon qubit. Standard transmission and spectroscopy measurements support the existence of atom-photon bound states in the system. Correlation measurement shows that the atom-photon interaction induces strong correlation of the transmitted light through the system. Thanks support from IARPA
Two-dimensional microwave band-gap structures of different dielectric materials
Indian Academy of Sciences (India)
E D V Nagesh; G Santosh Babu; V Subramanian; V Sivasubramanian; V R K Murthy
2005-12-01
We report the use of low dielectric constant materials to form two-dimensional microwave band-gap structures for achieving high gap-to-midgap ratio. The variable parameters chosen are the lattice spacing and the geometric structure. The selected geometries are square and triangular and the materials chosen are PTFE ( = 2.1), PVC ( = 2.38) and glass ( = 5.5). Using the plane-wave expansion method, proper lattice spacing is selected for each structure and material. The observed experimental results are analyzed with the help of the theoretical prediction.
Theoretical aspects of photonic band gap in 1D nano structure of LN: MgLN periodic layer
Energy Technology Data Exchange (ETDEWEB)
Sisodia, Namita, E-mail: namitasisodiya@gmail.com [Department of Physics, Holkar Science Collage, Indore-452017 (India)
2015-06-24
By using the transfer matrix method, we have analyzed the photonic band gap properties in a periodic layer of LN:MgLN medium. The Width of alternate layers of LN and MgLN is in the range of hundred nanometers. The birefringent and ferroelectric properties of the medium (i.e ordinary, extraordinary refractive indices and electric dipole moment) is given due considerations in the formulation of photonic band gap. Effect of electronic transition dipole moment of the medium on photonic band gap is also taken into account. We find that photonic band gap can be modified by the variation in the ratio of the width of two medium. We explain our findings by obtaining numerical values and the effect on the photonic band gap due to variation in the ratio of alternate medium is shown graphically.
Energy Technology Data Exchange (ETDEWEB)
Pietzsch, A., E-mail: annette.pietzsch@helmholtz-berlin.de [Institute for Methods and Instrumentation in Synchrotron Radiation Research G-ISRR, Helmholtz-Zentrum für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489 Berlin (Germany); Nisar, J. [Pakistan Atomic Energy Commission (PAEC), P.O. Box 2151, Islamabad (Pakistan); Jämstorp, E. [Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Gråsjö, J. [Department of Pharmacy, Uppsala University, Box 580, 75123 Uppsala (Sweden); Århammar, C. [Coromant R& D, S-126 80 Stockholm (Sweden); Ahuja, R.; Rubensson, J.-E. [Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala (Sweden)
2015-07-15
Highlights: • The respective electronic structure of synthetic and natural kaolinite is compared. • The size of the band gap and thus many important material properties are defined by defect states in the band gap. • The oxygen-based defect states are identified and analyzed. • The band gap of kaolinite decreases significantly due to the forming of defects. - Abstract: By combining X-ray absorption spectroscopy and first principles calculations we have determined the electronic structure of synthetic and natural kaolinite as a model system for engineered and natural clay materials. We have analyzed defect states in the band gap and find that both natural and synthetic kaolinite contain defects where oxygen replaces hydrogen in one of the Al (0 0 1)-hydroxyl groups of the kaolinite clay sheets. The band gap of both synthetic and natural kaolinite is found to decrease by about 3.2 eV as this defect is formed.
Directory of Open Access Journals (Sweden)
Jia Li
2015-11-01
Full Text Available The Heusler alloy Ti2CrGe is a stable L21 phase with antiferromagnetic ordering. With band-gap energy (∼ 0.18 eV obtained from a first-principles calculation, it belongs to the group of narrow band gap semiconductor. The band-gap energy decreases with increasing lattice compression and disappears until a strain of −5%; moreover, gap contraction only occurs in the spin-down states, leading to half-metallic character at the −5% strain. The Ti1, Ti2, and Cr moments all exhibit linear changes in behavior within strains of −5%– +5%. Nevertheless, the total zero moment is robust for these strains. The imaginary part of the dielectric function for both up and down spin states shows a clear onset energy, indicating a corresponding electronic gap for the two spin channels.
Birefringence and band structure of CdP{sub 2} crystals
Energy Technology Data Exchange (ETDEWEB)
Beril, S.I.; Stamov, I.G. [Tiraspol State Corporative University, Yablocikin Street 5, 2069 Tiraspol, Republic of Moldova (Moldova, Republic of); Syrbu, N.N., E-mail: sirbunn@yahoo.com [Technical University of Moldova, 168 Stefan cel Mare Avenue, 2004 Chisinau, Republic of Moldova (Moldova, Republic of); Zalamai, V.V. [Institute of Applied Physics, Academy of Sciences of Moldova, 5 Academy Street, 2028 Chisinau, Republic of Moldova (Moldova, Republic of)
2013-08-01
The spatial dispersion in CdP{sub 2} crystals was investigated. The dispersion is positive (n{sup k||c}>n{sup k||y}) at λ>λ{sub 0} and negative (n{sup k||c}
2005-01-01
We calculate the Coulomb interaction induced density, temperature and magnetization dependent many-body band-gap renormalization in a typical diluted magnetic semiconductor GaMnAs in the optimally-doped metallic regime as a function of carrier density and temperature. We find a large (about 0.1 eV) band gap renormalization which is enhanced by the ferromagnetic transition. We also calculate the impurity scattering effect on the gap narrowing. We suggest that the temperature, magnetization, an...
DEFF Research Database (Denmark)
Svane, Axel; Christensen, Niels Egede; Gorczyca, I.
2010-01-01
on the basis of the local approximation to density functional theory, although generally overestimated by 0.2–0.3 eV in comparison with experimental gap values. Details of the electronic energies and the effective masses including their pressure dependence are compared with available experimental information....... The band gap of InGaN2 is considerably smaller than what would be expected by linear interpolation implying a significant band gap bowing in InGaN alloys....
Light-gated single CdSe nanowire transistor: photocurrent saturation and band gap extraction
Energy Technology Data Exchange (ETDEWEB)
Zhang, Yang, E-mail: yangzh08@gmail.com; Chakraborty, Ritun; Kudera, Stefan; Krahne, Roman, E-mail: roman.krahne@iit.it [Istituto Italiano di Tecnologia, Nanochemistry department (Italy)
2015-11-15
CdSe nanowires are popular building blocks for many optoelectronic devices mainly owing to their direct band gap in the visible range of the spectrum. Here we investigate the optoelectronic properties of single CdSe nanowires fabricated by colloidal synthesis, in terms of their photocurrent–voltage characteristics and photoconductivity spectra recorded at 300 and 18 K. The photocurrent is identified as the secondary photocurrent, which gives rise to a photoconductive gain of ∼35. We observe a saturation of the photocurrent beyond a certain voltage bias that can be related to the finite drift velocity of electrons. From the photoconductivity spectra, we determine the band gap energy of the nanowires as ∼1.728 eV, and we resolve low-energy peaks that can be associated with sub-bandgap states.Graphical Abstract.
Magneto-resistive property study of direct and indirect band gap thermoelectric Bi-Sb alloys
Das, Diptasikha; Malik, K.; Bandyopadhyay, S.; Das, D.; Chatterjee, S.; Banerjee, Aritra
2014-08-01
We report magneto-resistive properties of direct and indirect band gap Bismuth-Antimony (Bi-Sb) alloys. Band gap increases with magnetic field. Large positive magnetoresistance (MR) approaching to 400% is observed. Low field MR experiences quadratic growth and at high field it follows a nearly linear behavior without sign of saturation. Carrier mobility extracted from low field MR data depicts remarkable high value of around 5 m2V-1s-1. Correlation between MR and mobility is revealed. We demonstrate that the strong nearly linear MR at high field can be well understood by classical method, co-build by Parish and Littlewood, Nature 426, 162 (2003) and Phys. Rev. B 72, 094417 (2005).
Energy Band Gap Study of Semiconducting Single Walled Carbon Nanotube Bundle
Elkadi, Asmaa; Decrossas, Emmanuel; El-Ghazaly, Samir
2013-01-01
The electronic properties of multiple semiconducting single walled carbon nanotubes (s-SWCNTs) considering various distribution inside a bundle are studied. The model derived from the proposed analytical potential function of the electron density for an individual s-SWCNT is general and can be easily applied to multiple nanotubes. This work demonstrates that regardless the number of carbon nanotubes, the strong coupling occurring between the closest neighbours reduces the energy band gap of the bundle by 10%. As expected, the coupling is strongly dependent on the distance separating the s-SWCNTs. In addition, based on the developed model, it is proposed to enhance this coupling effect by applying an electric field across the bundle to significantly reduce the energy band gap of the bundle by 20%.
Very low band gap thiadiazoloquinoxaline donor-acceptor polymers as multi-tool conjugated polymers.
Steckler, Timothy T; Henriksson, Patrik; Mollinger, Sonya; Lundin, Angelica; Salleo, Alberto; Andersson, Mats R
2014-01-29
Here we report on the synthesis of two novel very low band gap (VLG) donor-acceptor polymers (Eg ≤ 1 eV) and an oligomer based on the thiadiazoloquinoxaline acceptor. Both polymers demonstrate decent ambipolar mobilities, with P1 showing the best performance of ∼10(-2) cm(2) V(-1) s(-1) for p- and n-type operation. These polymers are among the lowest band gap polymers (≲0.7 eV) reported, with a neutral λmax = 1476 nm (P2), which is the farthest red-shifted λmax reported to date for a soluble processable polymer. Very little has been done to characterize the electrochromic aspects of VLG polymers; interestingly, these polymers actually show a bleaching of their neutral absorptions in the near-infrared region and have an electrochromic contrast up to 30% at a switching speed of 3 s.
Energy Band Gap Study of Semiconducting Single Walled Carbon Nanotube Bundle
Elkadi, Asmaa; Decrossas, Emmanuel; El-Ghazaly, Samir
2013-01-01
The electronic properties of multiple semiconducting single walled carbon nanotubes (s-SWCNTs) considering various distribution inside a bundle are studied. The model derived from the proposed analytical potential function of electron density for na individual s-SWCNT is general and can be easily applied to multiple nanotubes. This work demonstrates that regardless the number of carbon nanotubes, the strong coupling occurring between the closet neighbors reduces the energy band gap of the bundle by 10%. As expected, the coupling is strongly dependent on the distance separating the s-SWCNTs. In addition, based on the developed model, it is proposed to enhance this coupling effect by applying an electric field across the bundle to significantly reduce the energy band gap of the bundle by 20%.
Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes
Directory of Open Access Journals (Sweden)
E. Kasper
2012-01-01
Full Text Available Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV and highly doped Ge (0.73 eV. Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.
Intrinsic magnetism and spontaneous band gap opening in bilayer silicene and germanene.
Wang, Xinquan; Wu, Zhigang
2017-01-18
It has been long sought to create magnetism out of simple non-magnetic materials, such as silicon and germanium. Here we show that intrinsic magnetism exists in bilayer silicene and germanene with no need to cut, etch, or dope. Unlike bilayer graphene, strong covalent interlayer bonding formed in bilayer silicene and germanene breaks the original π-bonding network of each layer, leaving the unbonded electrons unpaired and localized to carry magnetic moments. These magnetic moments then couple ferromagnetically within each layer while antiferromagnetically across two layers, giving rise to an infinite magnetic sheet with structural integrity and magnetic homogeneity. Furthermore, this unique magnetic ordering results in fundamental band gaps of 0.55 eV and 0.32 eV for bilayer silicene and germanene, respectively. The integration of intrinsic magnetism and spontaneous band gap opening makes bilayer silicene and germanene attractive for future nanoelectronics as well as spin-based computation and data storage.
LC Filter Design for Wide Band Gap Device Based Adjustable Speed Drives
DEFF Research Database (Denmark)
Vadstrup, Casper; Wang, Xiongfei; Blaabjerg, Frede
2014-01-01
the LC filter with a higher cut off frequency and without damping resistors. The selection of inductance and capacitance is chosen based on capacitor voltage ripple and current ripple. The filter adds a base load to the inverter, which increases the inverter losses. It is shown how the modulation index......This paper presents a simple design procedure for LC filters used in wide band gap device based adjustable speed drives. Wide band gap devices offer fast turn-on and turn-off times, thus producing high dV/dt into the motor terminals. The high dV/dt can be harmful for the motor windings and bearings...... affects the capacitor capacitor and the inverter current....