Experimental Study of Electronic Quantum Interference, Photonic Crystal Cavity, Photonic Band Edge Effects for Optical Amplification

Science.gov (United States)

2016-01-26

AFRL-RV-PS- AFRL-RV-PS- TR-2016-0003 TR-2016-0003 EXPERIMENTAL STUDY OF ELECTRONIC QUANTUM INTERFERENCE , PHOTONIC CRYSTAL CAVITY, PHOTONIC BAND...EDGE EFFECTS FOR OPTICAL AMPLIFICATION Shawn-Yu Lin Rensselaer Polytechnic Institute 110 8th Street Troy, New York 12180 26 Jan 2016 Final Report...2014 – 11 Jan 2016 4. TITLE AND SUBTITLE Experimental Study of Electronic Quantum Interference , Photonic Crystal Cavity, Photonic Band Edge Effects

Quantitative results near the band edges of disordered systems

International Nuclear Information System (INIS)

Economou, E.N.; Soukoulis, C.M.; Cohen, M.H.; Zdetsis, A.D.

1985-01-01

By combining the coherent-potential approximation, the potential-well analogy, and theories for the near tail in the density of states, we obtain, for the first time, explicitly quantitative results for the various quantities of interest near the band edges of disordered systems. These results exhibit a certain universality and can be expressed in terms of simple analytic functions, provided that disorder is not larger than about (1/5) of the bandwidth

Near band edge emission characteristics of sputtered nano-crystalline ZnO films

International Nuclear Information System (INIS)

Kunj, Saurabh; Sreenivas, K.

2016-01-01

Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O_2) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

Near band edge emission characteristics of sputtered nano-crystalline ZnO films

Science.gov (United States)

Kunj, Saurabh; Sreenivas, K.

2016-05-01

Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O2) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

Near band edge emission characteristics of sputtered nano-crystalline ZnO films

Energy Technology Data Exchange (ETDEWEB)

Kunj, Saurabh; Sreenivas, K. [Department of Physics & Astrophysics, University of Delhi, Delhi 110007 INDIA (India)

2016-05-06

Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O{sub 2}) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

Atom-atom interactions around the band edge of a photonic crystal waveguide.

Science.gov (United States)

Hood, Jonathan D; Goban, Akihisa; Asenjo-Garcia, Ana; Lu, Mingwu; Yu, Su-Peng; Chang, Darrick E; Kimble, H J

2016-09-20

Tailoring the interactions between quantum emitters and single photons constitutes one of the cornerstones of quantum optics. Coupling a quantum emitter to the band edge of a photonic crystal waveguide (PCW) provides a unique platform for tuning these interactions. In particular, the cross-over from propagating fields [Formula: see text] outside the bandgap to localized fields [Formula: see text] within the bandgap should be accompanied by a transition from largely dissipative atom-atom interactions to a regime where dispersive atom-atom interactions are dominant. Here, we experimentally observe this transition by shifting the band edge frequency of the PCW relative to the [Formula: see text] line of atomic cesium for [Formula: see text] atoms trapped along the PCW. Our results are the initial demonstration of this paradigm for coherent atom-atom interactions with low dissipation into the guided mode.

Atom–atom interactions around the band edge of a photonic crystal waveguide

Science.gov (United States)

Hood, Jonathan D.; Goban, Akihisa; Asenjo-Garcia, Ana; Lu, Mingwu; Yu, Su-Peng; Chang, Darrick E.; Kimble, H. J.

2016-01-01

Tailoring the interactions between quantum emitters and single photons constitutes one of the cornerstones of quantum optics. Coupling a quantum emitter to the band edge of a photonic crystal waveguide (PCW) provides a unique platform for tuning these interactions. In particular, the cross-over from propagating fields E(x)∝e±ikxx outside the bandgap to localized fields E(x)∝e−κx|x| within the bandgap should be accompanied by a transition from largely dissipative atom–atom interactions to a regime where dispersive atom–atom interactions are dominant. Here, we experimentally observe this transition by shifting the band edge frequency of the PCW relative to the D1 line of atomic cesium for N¯=3.0±0.5 atoms trapped along the PCW. Our results are the initial demonstration of this paradigm for coherent atom–atom interactions with low dissipation into the guided mode. PMID:27582467

Atom-atom interactions around the band edge of a photonic crystal waveguide

Science.gov (United States)

Hood, Jonathan D.; Goban, Akihisa; Asenjo-Garcia, Ana; Lu, Mingwu; Yu, Su-Peng; Chang, Darrick E.; Kimble, H. J.

2016-09-01

Tailoring the interactions between quantum emitters and single photons constitutes one of the cornerstones of quantum optics. Coupling a quantum emitter to the band edge of a photonic crystal waveguide (PCW) provides a unique platform for tuning these interactions. In particular, the cross-over from propagating fields E(x)∝e±ikxxE(x)∝e±ikxx outside the bandgap to localized fields E(x)∝e-κx|x|E(x)∝e-κx|x| within the bandgap should be accompanied by a transition from largely dissipative atom-atom interactions to a regime where dispersive atom-atom interactions are dominant. Here, we experimentally observe this transition by shifting the band edge frequency of the PCW relative to the D1D1 line of atomic cesium for N¯=3.0±0.5N¯=3.0±0.5 atoms trapped along the PCW. Our results are the initial demonstration of this paradigm for coherent atom-atom interactions with low dissipation into the guided mode.

Determination of shift in energy of band edges and band gap of ZnSe spherical quantum dot

Science.gov (United States)

Siboh, Dutem; Kalita, Pradip Kumar; Sarma, Jayanta Kumar; Nath, Nayan Mani

2018-04-01

We have determined the quantum confinement induced shifts in energy of band edges and band gap with respect to size of ZnSe spherical quantum dot employing an effective confinement potential model developed in our earlier communication "arXiv:1705.10343". We have also performed phenomenological analysis of our theoretical results in comparison with available experimental data and observe a very good agreement in this regard. Phenomenological success achieved in this regard confirms validity of the confining potential model as well as signifies the capability and applicability of the ansatz for the effective confining potential to have reasonable information in the study of real nano-structured spherical systems.

Conduction band edge effective mass of La-doped BaSnO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

James Allen, S., E-mail: allen@itst.ucsb.edu; Law, Ka-Ming [Physics Department, University of California, Santa Barbara, California 93106-5100 (United States); Raghavan, Santosh; Schumann, Timo; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2016-06-20

BaSnO{sub 3} has attracted attention as a promising material for applications requiring wide band gap, high electron mobility semiconductors, and moreover possesses the same perovskite crystal structure as many functional oxides. A key parameter for these applications and for the interpretation of its properties is the conduction band effective mass. We measure the plasma frequency of La-doped BaSnO{sub 3} thin films by glancing incidence, parallel-polarized resonant reflectivity. Using the known optical dielectric constant and measured electron density, the resonant frequency determines the band edge electron mass to be 0.19 ± 0.01. The results allow for testing band structure calculations and transport models.

Bi2Se3/CdS/TiO2 hybrid photoelectrode and its band-edge levels

International Nuclear Information System (INIS)

Zhang, Qi; Su, Jun; Zhang, Xianghui; Li, Jian; Zhang, Aiqing; Gao, Yihua

2012-01-01

Highlights: ► CVD synthesis of Bi 2 Se 3 nanoparticles. ► Bi 2 Se 3 and CdS co-sensitized TiO 2 nanorod arrays electrode was assembled by CVD. ► Direct physical contact heterojunctions were formed at the interfaces of electrode. ► Cascade structure of band-edge levels was formed in Bi 2 Se 3 /CdS/TiO 2 electrode. - Abstract: Bismuth selenide (Bi 2 Se 3 ) was chosen as the sensitizer to TiO 2 nanorod (NR) arrays photoelectrode to harvest infrared (IR) light for its narrow band gap. For utilizing more amount of IR solar energy, Bi 2 Se 3 nanoparticles (NPs) were grown up to a relative larger grain size. And, a cadmium sulfide (CdS) NPs intermediate layer was introduced to help, to coordinate, the structure of band-edge levels in Bi 2 Se 3 /CdS/TiO 2 electrode. Here, a chemical vapor deposition (CVD) strategy was introduced to assemble this kind of composite photoelectrode. And a cascade structure of band-edge levels constructed in it when achieving electrostatic equilibrium in Na 2 S/Na 2 SO 3 aqueous solution electrolyte revealed by electrochemical analysis method, which will facilitate the hydrogen generation.

Antarctic krill under sea ice: elevated abundance in a narrow band just south of ice edge.

Science.gov (United States)

Brierley, Andrew S; Fernandes, Paul G; Brandon, Mark A; Armstrong, Frederick; Millard, Nicholas W; McPhail, Steven D; Stevenson, Peter; Pebody, Miles; Perrett, James; Squires, Mark; Bone, Douglas G; Griffiths, Gwyn

2002-03-08

We surveyed Antarctic krill (Euphausia superba) under sea ice using the autonomous underwater vehicle Autosub-2. Krill were concentrated within a band under ice between 1 and 13 kilometers south of the ice edge. Within this band, krill densities were fivefold greater than that of open water. The under-ice environment has long been considered an important habitat for krill, but sampling difficulties have previously prevented direct observations under ice over the scale necessary for robust krill density estimation. Autosub-2 enabled us to make continuous high-resolution measurements of krill density under ice reaching 27 kilometers beyond the ice edge.

Dirac Cones, Topological Edge States, and Nontrivial Flat Bands in Two-Dimensional Semiconductors with a Honeycomb Nanogeometry

Directory of Open Access Journals (Sweden)

E. Kalesaki

2014-01-01

Full Text Available We study theoretically two-dimensional single-crystalline sheets of semiconductors that form a honeycomb lattice with a period below 10 nm. These systems could combine the usual semiconductor properties with Dirac bands. Using atomistic tight-binding calculations, we show that both the atomic lattice and the overall geometry influence the band structure, revealing materials with unusual electronic properties. In rocksalt Pb chalcogenides, the expected Dirac-type features are clouded by a complex band structure. However, in the case of zinc-blende Cd-chalcogenide semiconductors, the honeycomb nanogeometry leads to rich band structures, including, in the conduction band, Dirac cones at two distinct energies and nontrivial flat bands and, in the valence band, topological edge states. These edge states are present in several electronic gaps opened in the valence band by the spin-orbit coupling and the quantum confinement in the honeycomb geometry. The lowest Dirac conduction band has S-orbital character and is equivalent to the π-π^{⋆} band of graphene but with renormalized couplings. The conduction bands higher in energy have no counterpart in graphene; they combine a Dirac cone and flat bands because of their P-orbital character. We show that the width of the Dirac bands varies between tens and hundreds of meV. These systems emerge as remarkable platforms for studying complex electronic phases starting from conventional semiconductors. Recent advancements in colloidal chemistry indicate that these materials can be synthesized from semiconductor nanocrystals.

Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings

International Nuclear Information System (INIS)

Lucovsky, G.; Fulton, C.C.; Zhang, Y.; Luning, J.; Edge, L.; Whitten, J.L.; Nemanich, R.J.; Schlom, D.G.; Afanase'v, V.V.

2005-01-01

X-ray absorption spectroscopy (XAS) is used to study conduction band edge electronic structure of high-k transition metal (TM) and trivalent lanthanide series rare earth (RE) oxide dielectrics. Empty TM/RE d-states are studied by intra-atomic transitions originating in core level spin-orbit split p-states, and conduction band states are studied in inter-atomic transitions which originate in the oxygen atom 1s core level state. In non-crystalline Zr and Hf silicate alloys, the local bonding symmetry, or crystal field splits these d-states into doubly and triply degenerate features. In nano-crystalline oxides, there are additional d-state splittings due to contributions of more distant neighbors that completely remove d-state degeneracies via the Jahn-Teller effect mechanism. This gives rise to highly localized band edge states that are electronically active in photoconductivity, internal photoemission, and act as bulk traps in metal oxide semiconductor (MOS) devices

Enhancement of Faraday rotation at photonic-band-gap edge in garnet-based magnetophotonic crystals

International Nuclear Information System (INIS)

Zhdanov, A.G.; Fedyanin, A.A.; Aktsipetrov, O.A.; Kobayashi, D.; Uchida, H.; Inoue, M.

2006-01-01

Spectral dependences of Faraday rotation angle in one-dimensional garnet-based magnetophotonic crystals are considered. The enhancement of Faraday angle is demonstrated at the photonic band gap (PBG) edge both theoretically and experimentally. It is shown to be associated with the optical field localization in the magnetic layers of the structure. The advantages of magnetophotonic crystals in comparison with traditional magnetic microcavities are discussed. The specially designed microcavity structures optimized for the Faraday effect enhancement at the PBG edge are suggested

Adjustment of Sentinel-2 Multi-Spectral Instrument (MSI) Red-Edge Band Reflectance to Nadir BRDF Adjusted Reflectance (NBAR) and Quantification of Red-Edge Band BRDF Effects

OpenAIRE

David P. Roy; Zhongbin Li; Hankui K. Zhang

2017-01-01

Optical wavelength satellite data have directional reflectance effects over non-Lambertian surfaces, described by the bidirectional reflectance distribution function (BRDF). The Sentinel-2 multi-spectral instrument (MSI) acquires data over a 20.6° field of view that have been shown to have non-negligible BRDF effects in the visible, near-infrared, and short wave infrared bands. MSI red-edge BRDF effects have not been investigated. In this study, they are quantified by an examination of 6.6 mi...

Edge modulation of electronics and transport properties of cliff-edge phosphorene nanoribbons

Science.gov (United States)

Guo, Caixia; Wang, Tianxing; Xia, Congxin; Liu, Yufang

2017-12-01

Based on the first-principles calculations, we study the electronic structures and transport properties of cliff-like edge phosphorene nanoribbons (CPNRs), considering different types of edge passivation. The band structures of bare CPNRs possess the metallic features; while hydrogen (H), fluorine (F), chlorine (Cl) and oxygen (O) atoms-passivated CPNRs are semiconductor materials, and the band gap values monotonically decrease when the ribbon width increases. Moreover, the H and F-passivated CPNRs exhibit the direct band gap characteristics, while the Cl and O-passivated cases show the features of indirect band gap. In addition, the edge passivated CPNRs are more energetically stable than bare edge case. Meanwhile, our results also show that the transport properties of the CPNRs can be obviously influenced by the different edge passivation.

Lifshitz singularities in random harmonic chains: periodic amplitudes near the band edge and near special frequencies

International Nuclear Information System (INIS)

Nieuwenhuizen, T.M.; Luck, J.M.

1987-01-01

The authors give a complete description of the scaling behavior of the integrated density of states of random harmonic chains with random masses near the band edge omega/sub max/ and near special frequencies omega/sub s/. There are four different situations: omega upward arrow omega/sub max/, omega upward arrow omega/sub s/, omega upward arrow omega/sub s/ (critical case), omega upward arrow omega/sub s/ (general case). Their analytic results have the form of infinite sums involving Fourier coefficients of the scaling behavior of the Dyson-Schmidt function at the special frequency or the band edge. Binary mass distributions are considered in detail in the limit of a small fraction rho of light masses. Their predictions are compared with extensive numerical data

Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yodo, Tokuo; Yona, Hiroaki; Ando, Hironori; Nosei, Daiki; Harada, Yoshiyuki

2002-01-01

We observed strong band edge luminescence at 8.5-200 K from 200-880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. The InN film on the Si(001) substrate exhibited strong band edge photoluminescence (PL) emission at 1.814 eV at 8.5 K, tentatively assigned as donor to acceptor pair [DAP (α-InN)] emission from wurtzite-InN (α-InN) crystal grains, while those on Si(111) showed other stronger band edge PL emissions at 1.880, 2.081 and 2.156 eV, tentatively assigned as donor bound exciton [D 0 X(α-InN)] from α-InN grains, DAP (β-InN) and D 0 X (β-InN) emissions from zinc blende-InN (β-InN) grains, respectively

The effect of spin-orbit coupling in band structure and edge states of bilayer graphene

Energy Technology Data Exchange (ETDEWEB)

Sahdan, Muhammad Fauzi; Darma, Yudi, E-mail: yudi@fi.itb.ac.id [Department of Physics, InstitutTeknologi Bandung, Jalan Ganesa 10, Bandung 40132 (Indonesia)

2015-04-16

Topological insulators are predicted to be useful ranging from spintronics to quantum computation. Graphene was first predicted to be the precursor of topological insulator by Kane-Mele. They developed a Hamiltonian model to describe the gap opening in graphene. In this work, we investigate the band structure of bilayer grapheme and also its edge states by using this model with analytical approach. The results of our calculation show that the gap opening occurs at K and K’ point in bilayer graphene.In addition, a pair of gapless edge modes occurs both in the zigzag and arm-chair configurations are no longer exist. There are gap created at the edge even though thery are very small.

Origin of long lifetime of band-edge charge carriers in organic-inorganic lead iodide perovskites.

Science.gov (United States)

Chen, Tianran; Chen, Wei-Liang; Foley, Benjamin J; Lee, Jooseop; Ruff, Jacob P C; Ko, J Y Peter; Brown, Craig M; Harriger, Leland W; Zhang, Depei; Park, Changwon; Yoon, Mina; Chang, Yu-Ming; Choi, Joshua J; Lee, Seung-Hun

2017-07-18

Long carrier lifetime is what makes hybrid organic-inorganic perovskites high-performance photovoltaic materials. Several microscopic mechanisms behind the unusually long carrier lifetime have been proposed, such as formation of large polarons, Rashba effect, ferroelectric domains, and photon recycling. Here, we show that the screening of band-edge charge carriers by rotation of organic cation molecules can be a major contribution to the prolonged carrier lifetime. Our results reveal that the band-edge carrier lifetime increases when the system enters from a phase with lower rotational entropy to another phase with higher entropy. These results imply that the recombination of the photoexcited electrons and holes is suppressed by the screening, leading to the formation of polarons and thereby extending the lifetime. Thus, searching for organic-inorganic perovskites with high rotational entropy over a wide range of temperature may be a key to achieve superior solar cell performance.

Polarization sensitive behaviour of the band-edge transitions in ReS2 and ReSe2 layered semiconductors

International Nuclear Information System (INIS)

Ho, C H; Lee, H W; Wu, C C

2004-01-01

The polarization sensitive behaviour of the band-edge transitions in ReS 2 and ReSe 2 layered compounds was studied using polarized-transmission and polarized-thermoreflectance (PTR) measurements with polarization angles from θ = 0 deg. (Evector parallel b-axis) to θ = 90 deg. (Evector perpendicular b-axis) at 300 K. The polarization dependence of the polarized energy gaps of ReS 2 and ReSe 2 shows a sinusoidal-like variation with respect to the angular change of the linearly polarized light. The angular dependences of the polarized energy gaps of ReS 2 and ReSe 2 were evaluated. The polarization sensitive behaviour of the band-edge excitons in rhenium disulfide and diselenide was characterized using angular dependent PTR measurements from θ = 0 deg. to 90 deg. The polarized transition intensities of the band-edge excitons (E 1 ex and E 2 ex ) of ReX 2 (X = S, Se) demonstrate a sinusoidal variation with respect to the angular change of the linearly polarized light. The angular dependence of the polarized transition probabilities of E 1 ex and E 2 ex is analysed. The polarization sensitive behaviours of ReX 2 (X = S, Se) layers are discussed

Edge-functionalization of armchair graphene nanoribbons with pentagonal-hexagonal edge structures.

Science.gov (United States)

Ryou, Junga; Park, Jinwoo; Kim, Gunn; Hong, Suklyun

2017-06-21

Using density functional theory calculations, we have studied the edge-functionalization of armchair graphene nanoribbons (AGNRs) with pentagonal-hexagonal edge structures. While the AGNRs with pentagonal-hexagonal edge structures (labeled (5,6)-AGNRs) are metallic, the edge-functionalized (5,6)-AGNRs with substitutional atoms opens a band gap. We find that the band structures of edge-functionalized (5,6)-N-AGNRs by substitution resemble those of defect-free (N-1)-AGNR at the Γ point, whereas those at the X point show the original ones of the defect-free N-AGNR. The overall electronic structures of edge-functionalized (5,6)-AGNRs depend on the number of electrons, supplied by substitutional atoms, at the edges of functionalized (5,6)-AGNRs.

Non-Dirac Chern insulators with large band gaps and spin-polarized edge states.

Science.gov (United States)

Xue, Y; Zhang, J Y; Zhao, B; Wei, X Y; Yang, Z Q

2018-05-10

Based on first-principles calculations and k·p models, we demonstrate that PbC/MnSe heterostructures are a non-Dirac type of Chern insulator with very large band gaps (244 meV) and exotically half-metallic edge states, providing the possibilities of realizing very robust, completely spin polarized, and dissipationless spintronic devices from the heterostructures. The achieved extraordinarily large nontrivial band gap can be ascribed to the contribution of the non-Dirac type electrons (composed of px and py) and the very strong atomic spin-orbit coupling (SOC) interaction of the heavy Pb element in the system. Surprisingly, the band structures are found to be sensitive to the different exchange and correlation functionals adopted in the first-principles calculations. Chern insulators with various mechanisms are acquired from them. These discoveries show that the predicted nontrivial topology in PbC/MnSe heterostructures is robust and can be observed in experiments at high temperatures. The system has great potential to have attractive applications in future spintronics.

Red shift of near band edge emission in cerium implanted GaN

International Nuclear Information System (INIS)

Majid, Abdul; Ali, Akbar

2009-01-01

Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.

Red shift of near band edge emission in cerium implanted GaN

Energy Technology Data Exchange (ETDEWEB)

Majid, Abdul; Ali, Akbar, E-mail: abdulmajid40@yahoo.co, E-mail: akbar@qau.edu.p [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)

2009-02-21

Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.

The use of bulk states to accelerate the band edge state calculation of a semiconductor quantum dot

International Nuclear Information System (INIS)

Voemel, Christof; Tomov, Stanimire Z.; Wang, Lin-Wang; Marques, Osni A.; Dongarra, Jack J.

2007-01-01

We present a new technique to accelerate the convergence of the folded spectrum method in empirical pseudopotential band edge state calculations for colloidal quantum dots. We use bulk band states of the materials constituent of the quantum dot to construct initial vectors and a preconditioner. We apply these to accelerate the convergence of the folded spectrum method for the interior states at the top of the valence and the bottom of the conduction band. For large CdSe quantum dots, the number of iteration steps until convergence decreases by about a factor of 4 compared to previous calculations

Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

KAUST Repository

Zhou, Hang; Deng, Rui; Li, Yongfeng; Yao, Bin; Ding, Zhanhui; Wang, Qingxiao; Han, Yu; Wu, Tao; Liu, Lei

2014-01-01

at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014

Edge instabilities of topological superconductors

Energy Technology Data Exchange (ETDEWEB)

Hofmann, Johannes S. [Institut fuer Theoretische Physik und Astrophysik, Universitaet Wuerzburg (Germany); Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Assaad, Fakher F. [Institut fuer Theoretische Physik und Astrophysik, Universitaet Wuerzburg (Germany); Schnyder, Andreas P. [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)

2016-07-01

Nodal topological superconductors display zero-energy Majorana flat bands at generic edges. The flatness of these edge bands, which is protected by time-reversal and translation symmetry, gives rise to an extensive ground state degeneracy and a diverging density of states. Therefore, even arbitrarily weak interactions lead to an instability of the flat-band edge states towards time-reversal and translation-symmetry broken phases, which lift the ground-state degeneracy. Here, we employ Monte Carlo simulations combined with mean-field considerations to examine the instabilities of the flat-band edge states of d{sub xy}-wave superconductors. We find that attractive interactions induce a complex s-wave pairing instability together with a density wave instability. Repulsive interactions, on the other hand, lead to ferromagnetism mixed with spin-triplet pairing at the edge. We discuss the implications of our findings for experiments on cuprate high-temperature superconductors.

Influence of defects on the absorption edge of InN thin films: The band gap value

Science.gov (United States)

Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.

2007-07-01

We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.

Paired modes of heterostructure cavities in photonic crystal waveguides with split band edges

DEFF Research Database (Denmark)

Mahmoodian, Sahand; Sukhorukov, Andrey A.; Ha, Sangwoo

2010-01-01

We investigate the modes of double heterostructure cavities where the underlying photonic crystal waveguide has been dispersion engineered to have two band-edges inside the Brillouin zone. By deriving and using a perturbative method, we show that these structures possess two modes. For unapodized...... cavities, the relative detuning of the two modes can be controlled by changing the cavity length, and for particular lengths, a resonant-like effect makes the modes degenerate. For apodized cavities no such resonances exist and the modes are always non-degenerate....

Comparing Broad-Band and Red Edge-Based Spectral Vegetation Indices to Estimate Nitrogen Concentration of Crops Using Casi Data

Science.gov (United States)

Wang, Yanjie; Liao, Qinhong; Yang, Guijun; Feng, Haikuan; Yang, Xiaodong; Yue, Jibo

2016-06-01

In recent decades, many spectral vegetation indices (SVIs) have been proposed to estimate the leaf nitrogen concentration (LNC) of crops. However, most of these indices were based on the field hyperspectral reflectance. To test whether they can be used in aerial remote platform effectively, in this work a comparison of the sensitivity between several broad-band and red edge-based SVIs to LNC is investigated over different crop types. By using data from experimental LNC values over 4 different crop types and image data acquired using the Compact Airborne Spectrographic Imager (CASI) sensor, the extensive dataset allowed us to evaluate broad-band and red edge-based SVIs. The result indicated that NDVI performed the best among the selected SVIs while red edge-based SVIs didn't show the potential for estimating the LNC based on the CASI data due to the spectral resolution. In order to search for the optimal SVIs, the band combination algorithm has been used in this work. The best linear correlation against the experimental LNC dataset was obtained by combining the 626.20nm and 569.00nm wavebands. These wavelengths correspond to the maximal chlorophyll absorption and reflection position region, respectively, and are known to be sensitive to the physiological status of the plant. Then this linear relationship was applied to the CASI image for generating an LNC map, which can guide farmers in the accurate application of their N fertilization strategies.

Edge effects on the electronic properties of phosphorene nanoribbons

International Nuclear Information System (INIS)

Peng, Xihong; Copple, Andrew; Wei, Qun

2014-01-01

Two dimensional few-layer black phosphorus crystal structures have recently been fabricated and have demonstrated great potential in electronic applications. In this work, we employed first principles density functional theory calculations to study the edge and quantum confinement effects on the electronic properties of the phosphorene nanoribbons (PNR). Different edge functionalization groups, such as H, F, Cl, OH, O, S, and Se, in addition to a pristine case were studied for a series of ribbon widths up to 3.5 nm. It was found that the armchair-PNRs (APNRs) are semiconductors for all edge groups considered in this work. However, the zigzag-PNRs (ZPNRs) show either semiconductor or metallic behavior in dependence on their edge chemical species. Family 1 edges (i.e., H, F, Cl, OH) form saturated bonds with P atoms in the APNRs and ZPNRs, and the edge states keep far away from the band gap. However, Family 2 edges (pristine, O, S, Se) form weak unsaturated bonds with the p z orbital of the phosphorus atoms and bring edge states within the band gap of the ribbons. For the ZPNRs, the edge states of Family 2 are present around the Fermi level within the band gap, which close up the band gap of the ZPNRs. For the APNRs, these edge states are located at the bottom of the conduction band and result in a reduced band gap.

Edge effects on the electronic properties of phosphorene nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Peng, Xihong, E-mail: xihong.peng@asu.edu [School of Letters and Sciences, Arizona State University, Mesa, Arizona 85212 (United States); Copple, Andrew [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States); Wei, Qun [School of Letters and Sciences, Arizona State University, Mesa, Arizona 85212 (United States); School of Physics and Optoelectronic Engineering, Xidian University, Xi' an 710071 (China)

2014-10-14

Two dimensional few-layer black phosphorus crystal structures have recently been fabricated and have demonstrated great potential in electronic applications. In this work, we employed first principles density functional theory calculations to study the edge and quantum confinement effects on the electronic properties of the phosphorene nanoribbons (PNR). Different edge functionalization groups, such as H, F, Cl, OH, O, S, and Se, in addition to a pristine case were studied for a series of ribbon widths up to 3.5 nm. It was found that the armchair-PNRs (APNRs) are semiconductors for all edge groups considered in this work. However, the zigzag-PNRs (ZPNRs) show either semiconductor or metallic behavior in dependence on their edge chemical species. Family 1 edges (i.e., H, F, Cl, OH) form saturated bonds with P atoms in the APNRs and ZPNRs, and the edge states keep far away from the band gap. However, Family 2 edges (pristine, O, S, Se) form weak unsaturated bonds with the p{sub z} orbital of the phosphorus atoms and bring edge states within the band gap of the ribbons. For the ZPNRs, the edge states of Family 2 are present around the Fermi level within the band gap, which close up the band gap of the ZPNRs. For the APNRs, these edge states are located at the bottom of the conduction band and result in a reduced band gap.

Enhancement of Spontaneous Erbium Emission near the Photonic Band Edge of Distributed Bragg Reflectors Based on a-Si:H/a-SiOx:H

International Nuclear Information System (INIS)

Medvedev, A.V.; Feoktistov, N.A.; Pevtsov, A.B.; Golubev, V.G.

2005-01-01

Results obtained in an experimental study of spontaneous emission from erbium ions in a spectral range corresponding to the lower photonic band edge of distributed Bragg reflectors (1D photonic crystals) are presented. The photonic crystals were constituted of alternating quarter-wave a-Si:H and a-SiO x :H layers grown by PECVD. Erbium was introduced into the a-Si:H layers by magnetron sputtering of an erbium target in the course of structure growth. The change observed in the intensity of spontaneous emission is due to the nonmonotonic behavior of the density of optical modes near the photonic band edge

Microscopic bosonization of band structures: x-ray processes beyond the Fermi edge

Science.gov (United States)

Snyman, Izak; Florens, Serge

2017-11-01

Bosonization provides a powerful analytical framework to deal with one-dimensional strongly interacting fermion systems, which makes it a cornerstone in quantum many-body theory. However, this success comes at the expense of using effective infrared parameters, and restricting the description to low energy states near the Fermi level. We propose a radical extension of the bosonization technique that overcomes both limitations, allowing computations with microscopic lattice Hamiltonians, from the Fermi level down to the bottom of the band. The formalism rests on the simple idea of representating the fermion kinetic term in the energy domain, after which it can be expressed in terms of free bosonic degrees of freedom. As a result, one- and two-body fermionic scattering processes generate anharmonic boson-boson interactions, even in the forward channel. We show that up to moderate interaction strengths, these non-linearities can be treated analytically at all energy scales, using the x-ray emission problem as a showcase. In the strong interaction regime, we employ a systematic variational solution of the bosonic theory, and obtain results that agree quantitatively with an exact diagonalization of the original one-particle fermionic model. This provides a proof of the fully microscopic character of bosonization, on all energy scales, for an arbitrary band structure. Besides recovering the known x-ray edge singularity at the emission threshold, we find strong signatures of correlations even at emission frequencies beyond the band bottom.

Lithium-modulated conduction band edge shifts and charge-transfer dynamics in dye-sensitized solar cells based on a dicyanamide ionic liquid.

Science.gov (United States)

Bai, Yu; Zhang, Jing; Wang, Yinghui; Zhang, Min; Wang, Peng

2011-04-19

Lithium ions are known for their potent function in modulating the energy alignment at the oxide semiconductor/dye/electrolyte interface in dye-sensitized solar cells (DSCs), offering the opportunity to control the associated multichannel charge-transfer dynamics. Herein, by optimizing the lithium iodide content in 1-ethyl-3-methylimidazolium dicyanamide-based ionic liquid electrolytes, we present a solvent-free DSC displaying an impressive 8.4% efficiency at 100 mW cm(-2) AM1.5G conditions. We further scrutinize the origins of evident impacts of lithium ions upon current density-voltage characteristics as well as photocurrent action spectra of DSCs based thereon. It is found that, along with a gradual increase of the lithium content in ionic liquid electrolytes, a consecutive diminishment of the open-circuit photovoltage arises, primarily owing to a noticeable downward movement of the titania conduction band edge. The conduction band edge displacement away from vacuum also assists the formation of a more favorable energy offset at the titania/dye interface, and thereby leads to a faster electron injection rate and a higher exciton dissociation yield as implied by transient emission measurements. We also notice that the adverse influence of the titania conduction band edge downward shift arising from lithium addition upon photovoltage is partly compensated by a concomitant suppression of the triiodide involving interfacial charge recombination. © 2011 American Chemical Society

Performance of horn-coupled transition edge sensors for L- and S-band optical detection on the SAFARI instrument

Science.gov (United States)

Goldie, D. J.; Glowacka, D. M.; Withington, S.; Chen, Jiajun; Ade, P. A. R.; Morozov, D.; Sudiwala, R.; Trappe, N. A.; Quaranta, O.

2016-07-01

We describe the geometry, architecture, dark- and optical performance of ultra-low-noise transition edge sensors as THz detectors for the SAFARI instrument. The TESs are fabricated from superconducting Mo/Au bilayers coupled to impedance-matched superconducting β-phase Ta thin-film absorbers. The detectors have phonon-limited dark noise equivalent powers of order 0.5 - 1.0 aW/ √ Hz and saturation powers of order 20 - 40 fW. The low temperature test configuration incorporating micro-machined backshorts is also described, and construction and typical performance characteristics for the optical load are shown. We report preliminary measurements of the optical performance of these TESs for two SAFARI bands; L-band at 110 - 210 μm and S-band 34 - 60 μm .

Exploring the Potential of WorldView-2 Red-Edge Band-Based Vegetation Indices for Estimation of Mangrove Leaf Area Index with Machine Learning Algorithms

Directory of Open Access Journals (Sweden)

Yuanhui Zhu

2017-10-01

Full Text Available To accurately estimate leaf area index (LAI in mangrove areas, the selection of appropriate models and predictor variables is critical. However, there is a major challenge in quantifying and mapping LAI using multi-spectral sensors due to the saturation effects of traditional vegetation indices (VIs for mangrove forests. WorldView-2 (WV2 imagery has proven to be effective to estimate LAI of grasslands and forests, but the sensitivity of its vegetation indices (VIs has been uncertain for mangrove forests. Furthermore, the single model may exhibit certain randomness and instability in model calibration and estimation accuracy. Therefore, this study aims to explore the sensitivity of WV2 VIs for estimating mangrove LAI by comparing artificial neural network regression (ANNR, support vector regression (SVR and random forest regression (RFR. The results suggest that the RFR algorithm yields the best results (RMSE = 0.45, 14.55% of the average LAI, followed by ANNR (RMSE = 0.49, 16.04% of the average LAI, and then SVR (RMSE = 0.51, 16.56% of the average LAI algorithms using 5-fold cross validation (CV using all VIs. Quantification of the variable importance shows that the VIs derived from the red-edge band consistently remain the most important contributor to LAI estimation. When the red-edge band-derived VIs are removed from the models, estimation accuracies measured in relative RMSE (RMSEr decrease by 3.79%, 2.70% and 4.47% for ANNR, SVR and RFR models respectively. VIs derived from red-edge band also yield better accuracy compared with other traditional bands of WV2, such as near-infrared-1 and near-infrared-2 band. Furthermore, the estimated LAI values vary significantly across different mangrove species. The study demonstrates the utility of VIs of WV2 imagery and the selected machine-learning algorithms in developing LAI models in mangrove forests. The results indicate that the red-edge band of WV2 imagery can help alleviate the saturation

Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo

2013-01-01

Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5–20 × 10 20 cm −3 ) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 °C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein–Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities. - Highlights: • Studied PL properties of heavily-doped ZnO:Al films grown by PLD. • Unusual strong near-band-edge emissions and negligible deep-level emission at RT. • Increased optical band gap with growth temperature and thus carrier concentration. • Stokes shift and PL peak width increased with carrier concentration. • Results explained by a model based on local potential fluctuations

Calculations of Energy Shift of the Conduction Band-Edge in Doped and Compensated GaP

OpenAIRE

Endo, Tamio; Itoh, Nobuhiko; Okino, Yasushi; 遠藤, 民生; 伊藤, 伸彦; 沖野, 祥[他

1989-01-01

The energy shifts of the parabolic conduction band-edge at 77 and 300K with doping the Te-donor in GaP were calculated in the nondegenerate system for the two cases ; unintentional and intentional compensations, using the two models proposed by Hwang abd by Mahan. The total parabolic shift △EM（△EH）, and the contributions of the exchangeinteraction △μex（△Ee） and of the Coulomb interaction △μed（△Ec） calculated by the Mahan's model (Hwang's model), increase with increasing donor concentration in...

Power spectrum weighted edge analysis for straight edge detection in images

Science.gov (United States)

Karvir, Hrishikesh V.; Skipper, Julie A.

2007-04-01

Most man-made objects provide characteristic straight line edges and, therefore, edge extraction is a commonly used target detection tool. However, noisy images often yield broken edges that lead to missed detections, and extraneous edges that may contribute to false target detections. We present a sliding-block approach for target detection using weighted power spectral analysis. In general, straight line edges appearing at a given frequency are represented as a peak in the Fourier domain at a radius corresponding to that frequency, and a direction corresponding to the orientation of the edges in the spatial domain. Knowing the edge width and spacing between the edges, a band-pass filter is designed to extract the Fourier peaks corresponding to the target edges and suppress image noise. These peaks are then detected by amplitude thresholding. The frequency band width and the subsequent spatial filter mask size are variable parameters to facilitate detection of target objects of different sizes under known imaging geometries. Many military objects, such as trucks, tanks and missile launchers, produce definite signatures with parallel lines and the algorithm proves to be ideal for detecting such objects. Moreover, shadow-casting objects generally provide sharp edges and are readily detected. The block operation procedure offers advantages of significant reduction in noise influence, improved edge detection, faster processing speed and versatility to detect diverse objects of different sizes in the image. With Scud missile launcher replicas as target objects, the method has been successfully tested on terrain board test images under different backgrounds, illumination and imaging geometries with cameras of differing spatial resolution and bit-depth.

Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

KAUST Repository

Zhou, Hang

2014-03-27

We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO 2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO 2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014 American Chemical Society.

Near-Band-Edge Optical Responses of CH3NH3PbCl3 Single Crystals: Photon Recycling of Excitonic Luminescence

Science.gov (United States)

Yamada, Takumi; Aharen, Tomoko; Kanemitsu, Yoshihiko

2018-02-01

The determination of the band gap and exciton energies of lead halide perovskites is very important from the viewpoint of fundamental physics and photonic device applications. By using photoluminescence excitation (PLE) spectra, we reveal the optical properties of CH3NH3PbCl3 single crystals in the near-band-edge energy regime. The one-photon PLE spectrum exhibits the 1 s exciton peak at 3.11 eV. On the contrary, the two-photon PLE spectrum exhibits no peak structure. This indicates photon recycling of excitonic luminescence. By analyzing the spatial distribution of the excitons and photon recycling, we obtain 3.15 eV for the band gap energy and 41 meV for the exciton binding energy.

Parametric interactions in high-Tc superconducting step edge junctions at X-band. [Y-Ba-Cu-O

Energy Technology Data Exchange (ETDEWEB)

Kain, A.Z. (TRW Space and Tech. Group, Redondo Beach, CA (United States)); Fetterman, H.R. (Electrical Engineering Dept., Univ. of California at Los Angeles (United States))

1993-04-20

We have fabricated and tested both single junctions and series arrays of YBCO step edge junctions for four photon parametric effects at X band as a first step in developing a parametric amplifier at 60 GHz. The series array of 25 junctions at 10.3 Ghz shows a 10 dB increase in reflected signal power as the pump power is increased, while the single junction at 12.2 GHz indicates a 2 dB change. The reflected power at the characteristic idler frequency of 2[omega][sub p]-[omega][sub s] is evidence of true Josephson junction parametric interaction. We are currently investigating the use of thallium based films at 60 GHz which offer a broader range of operating temperatures than does YBCO. Our design for a parametric amplifier at V band is a combination of microstrip based series arrays of junctions and an antipodal finline transition. (orig.)

Selective tuning of enhancement in near band edge emission in hydrothermally grown ZnO nanorods coated with gold

Energy Technology Data Exchange (ETDEWEB)

Dixit, Tejendra, E-mail: phd12110211@iiti.ac.in [Molecular and Nanoelectronics Research Group (MNRG), Department of Electrical Engineering, IIT Indore, Indore, Madhya Pradesh (India); Palani, I.A., E-mail: palaniia@iiti.ac.in [Mechatronics and Instrumentation Lab, Department of Mechanical Engineering, IIT Indore, Indore, Madhya Pradesh (India); Centre of Material Science and Engineering, IIT Indore, Indore, Madhya Pradesh (India); Singh, Vipul, E-mail: vipul@iiti.ac.in [Molecular and Nanoelectronics Research Group (MNRG), Department of Electrical Engineering, IIT Indore, Indore, Madhya Pradesh (India); Centre of Material Science and Engineering, IIT Indore, Indore, Madhya Pradesh (India)

2016-02-15

The room-temperature photoluminescence (PL) spectra of hydrothermally grown ZnO nanorods (NRs) coated with Au using dc sputtering and thermal evaporation were systematically investigated. Au coated (via dc sputtering) ZnO NRs were found to exhibit very large near band edge emission enhancement, on the contrary Au coated (via thermal evaporation) ZnO NRs showed suppression in the near band edge emission peak. These observed results were further confirmed by excitation intensity (EI) dependent PL spectra of different samples. Further using Raman spectra it has been observed that the longitudinal optical (LO) phonons exhibit an enhancement and a weakening by the Au coatings, using dc sputtering and thermal evaporation respectively. Finally by controlling the concentration of KMnO{sub 4} as an additive during the hydrothermal growth, selective tuning in the defect density was carried out, which was later utilized to probe the effect of defect density of the Au–ZnO plasmonic coupling. Moreover, our results strongly suggest that the EI dependent PL has a strong dependence on the metal coating technique. The findings presented in this article clearly indicate the dependence of Au–ZnO plasmonic coupling on the overall defect density and the process of Au deposition.

Co-channel and Adjacent Channel Interference Measurement of UMTS and GSM/EDGE Systems in 900 MHz Radio Band

Directory of Open Access Journals (Sweden)

S. Hanus

2008-09-01

Full Text Available This paper is concerned with inter-system and intra-system interference measurements of 2.5G and 3G mobile communication systems. The both systems UMTS and GSM/EDGE are assumed to operate in a common radio band of 900 MHz. The main system parameters are briefly introduced as well as the measurement scenario. Several simulations and key measurements were performed. Important results are described and commented along with a graphical representation, namely bit error ratio (BER dependence on carrier to noise ratio (CNR in the presence of additive white Gaussian noise (AWGN, the measurement of adjacent channel interference ratio of each system, the coexistence of both systems in same band and the impact of a carrier offset on BER.

An enhanced narrow-band imaging method for the microvessel detection

Science.gov (United States)

Yu, Feng; Song, Enmin; Liu, Hong; Wan, Youming; Zhu, Jun; Hung, Chih-Cheng

2018-02-01

A medical endoscope system combined with the narrow-band imaging (NBI), has been shown to be a superior diagnostic tool for early cancer detection. The NBI can reveal the morphologic changes of microvessels in the superficial cancer. In order to improve the conspicuousness of microvessel texture, we propose an enhanced NBI method to improve the conspicuousness of endoscopic images. To obtain the more conspicuous narrow-band images, we use the edge operator to extract the edge information of the narrow-band blue and green images, and give a weight to the extracted edges. Then, the weighted edges are fused with the narrow-band blue and green images. Finally, the displayed endoscopic images are reconstructed with the enhanced narrow-band images. In addition, we evaluate the performance of enhanced narrow-band images with different edge operators. Experimental results indicate that the Sobel and Canny operators achieve the best performance of all. Compared with traditional NBI method of Olympus company, our proposed method has more conspicuous texture of microvessel.

Effective Hamiltonian for protected edge states in graphene

International Nuclear Information System (INIS)

Winkler, R.; Deshpande, H.

2017-01-01

Edge states in topological insulators (TIs) disperse symmetrically about one of the time-reversal invariant momenta Λ in the Brillouin zone (BZ) with protected degeneracies at Λ. Commonly TIs are distinguished from trivial insulators by the values of one or multiple topological invariants that require an analysis of the bulk band structure across the BZ. We propose an effective two-band Hamiltonian for the electronic states in graphene based on a Taylor expansion of the tight-binding Hamiltonian about the time-reversal invariant M point at the edge of the BZ. This Hamiltonian provides a faithful description of the protected edge states for both zigzag and armchair ribbons, though the concept of a BZ is not part of such an effective model. In conclusion, we show that the edge states are determined by a band inversion in both reciprocal and real space, which allows one to select Λ for the edge states without affecting the bulk spectrum.

Strain-activated edge reconstruction of graphene nanoribbons

KAUST Repository

Cheng, Yingchun

2012-02-17

The edge structure and width of graphene nanoribbons (GNRs) are crucial factors for the electronic properties. A combination of experiment and first-principles calculations allows us to determine the mechanism of the hexagon-hexagon to pentagon-heptagon transformation. GNRs thinner than 2 nm have been fabricated by bombardment of graphene with high-energetic Au clusters. The edges of the GNRs are modified in situ by electron irradiation. Tensile strain along the edge decreases the transformation energy barrier. Antiferromagnetism and a direct band gap are found for a zigzag GNR, while a fully reconstructed GNR shows an indirect band gap. A GNR reconstructed on only one edge exhibits ferromagnetism. We propose that strain is an effective method to tune the edge and, therefore, the electronic structure of thin GNRs for graphene-based electronics.

Strain-activated edge reconstruction of graphene nanoribbons

KAUST Repository

Cheng, Yingchun; Han, Yu; Schwingenschlö gl, Udo; Wang, H. T.; Zhang, Xixiang; Zhu, Y. H.; Zhu, Zhiyong

2012-01-01

The edge structure and width of graphene nanoribbons (GNRs) are crucial factors for the electronic properties. A combination of experiment and first-principles calculations allows us to determine the mechanism of the hexagon-hexagon to pentagon-heptagon transformation. GNRs thinner than 2 nm have been fabricated by bombardment of graphene with high-energetic Au clusters. The edges of the GNRs are modified in situ by electron irradiation. Tensile strain along the edge decreases the transformation energy barrier. Antiferromagnetism and a direct band gap are found for a zigzag GNR, while a fully reconstructed GNR shows an indirect band gap. A GNR reconstructed on only one edge exhibits ferromagnetism. We propose that strain is an effective method to tune the edge and, therefore, the electronic structure of thin GNRs for graphene-based electronics.

Spontaneous emission near the band edge of a three-dimensional photonic crystal: a fractional calculus approach

International Nuclear Information System (INIS)

Cheng, S-C; Wu, J-N; Tsai, M-R; Hsieh, W-F

2009-01-01

We suggest a better mathematical method, fractional calculus, for studying the behavior of the atom-field interaction in photonic crystals. By studying the spontaneous emission of an atom in a photonic crystal with a one-band isotropic model, we found that the long-time inducing memory of the spontaneous emission is a fractional phenomenon. This behavior could be well described by fractional calculus. The results show no steady photon-atom bound state for the atomic resonant transition frequency lying in the proximity of the allowed band edge which was encountered in a previous study (Woldeyohannes and John 2003 J. Opt. B: Quantum Semiclass. Opt. 5 R43). The correctness of this result is validated by the 'cut-off smoothing' density of photon states (DOS) with fractional calculus. By obtaining a rigorous solution without the multiple-valued problem for the system, we show that the method of fractional calculus has a logically concise property.

POLYCYCLIC AROMATIC HYDROCARBONS WITH ARMCHAIR EDGES AND THE 12.7 μm BAND

International Nuclear Information System (INIS)

Candian, A.; Tielens, A. G. G. M.; Sarre, P. J.

2014-01-01

In this Letter, we report the results of density functional theory calculations on medium-sized neutral polycyclic aromatic hydrocarbon (PAH) molecules with armchair edges. These PAH molecules possess strong C-H stretching and bending modes around 3 μm and in the fingerprint region (10-15 μm), and also strong ring deformation modes around 12.7 μm. Perusal of the entries in the NASA Ames PAHs Database shows that ring deformation modes of PAHs are common, although generally weak. Therefore, we propose that armchair PAHs with N C > 65 are responsible for the 12.7 μm aromatic infrared band in H II regions and discuss the astrophysical implications in the context of the PAH life cycle

Highly Efficient Photocatalytic Water Splitting over Edge-Modified Phosphorene Nanoribbons.

Science.gov (United States)

Hu, Wei; Lin, Lin; Zhang, Ruiqi; Yang, Chao; Yang, Jinlong

2017-11-01

Two-dimensional phosphorene with desirable optoelectronic properties (ideal band gap, high carrier mobility, and strong visible light absorption) is a promising metal-free photocatalyst for water splitting. However, the band edge positions of the valence band maximum (VBM) and conduction band maximum (CBM) of phosphorene are higher than the redox potentials in photocatalytic water splitting reactions. Thus, phosphorene can only be used as the photocathode for hydrogen evolution reaction as a low-efficiency visible-light-driven photocatalyst for hydrogen production in solar water splitting cells. Here, we propose a new mechanism to improve the photocatalytic efficiency of phosphorene nanoribbons (PNRs) by modifying their edges for full reactions in photocatalytic water splitting. By employing first-principles density functional theory calculations, we find that pseudohalogen (CN and OCN) passivated PNRs not only show desired VBM and CBM band edge positions induced by edge electric dipole layer, but also possess intrinsic optoelectronic properties of phosphorene, for both water oxidation and hydrogen reduction in photocatalytic water splitting without using extra energy. Furthermore, our calculations also predict that the maximum energy conversion efficiency of heterojunction solar cells consisting of different edge-modified PNRs can be as high as 20% for photocatalytic water splitting.

Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors

Science.gov (United States)

Kadashchuk, Andrey; Tong, Fei; Janneck, Robby; Fishchuk, Ivan I.; Mityashin, Alexander; Pavlica, Egon; Köhler, Anna; Heremans, Paul; Rolin, Cedric; Bratina, Gvido; Genoe, Jan

2017-09-01

We demonstrate that the degree of charge delocalization has a strong impact on polarization energy and thereby on the position of the transport band edge in organic semiconductors. This gives rise to long-range potential fluctuations, which govern the electronic transport through delocalized states in organic crystalline layers. This concept is employed to formulate an analytic model that explains a negative field dependence coupled with a positive temperature dependence of the charge mobility observed by a lateral time-of-flight technique in a high-mobility crystalline organic layer. This has important implications for the further understanding of the charge transport via delocalized states in organic semiconductors.

X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Martinez-Criado, G.; Salome, M.; Susini, J. [ESRF, Polygone Scientifique Louis Neel, 6 rue Jules Horowitz, 38000 Grenoble (France); Olguin, D. [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D.F. (Mexico); Dhar, S.; Ploog, K. [Paul Drude Institute, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2006-06-15

We have studied by X-ray absorption spectroscopy the local environment of Mn in highly homogeneous Ga{sub 1-x}Mn{sub x}N (0.06edges. In this report, we focus our attention to the X-ray absorption near edge spectroscopy (XANES) results. The comparison of the XANES spectra corresponding to the Ga and Mn edges indicates that Mn is substitutional to Ga in all samples studied. The XANES spectra measured at the Mn absorption edge shows in the near-edge region a double peak and a shoulder below the absorption edge and the main absorption peak after the edge, separated around 15 eV above the pre-edge structure. We have compared the position of the edge with that of MnO (Mn{sup 2+}) and Mn{sub 2}O{sub 3} (Mn{sup 3+}). All samples studied present the same Mn oxidation state, 2{sup +}. In order to interprete the near-edge structure, we have performed ab initio calculations with a 2 x 2 x 1supercell ({proportional_to}6% Mn) using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of Mn anti-bonding t{sub 2g} bands, which are responsible for the pre-edge absorption. The shoulder and main absorption peaks are due to transitions from the valence band 1s-states of Mn to the p-contributions of the conduction bands. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Band-gap and band-edge engineering of multicomponent garnet scintillators from first principles

Czech Academy of Sciences Publication Activity Database

Yadav, S.K.; Uberuaga, B.P.; Nikl, Martin; Jiang, C.; Stanek, C.R.

2015-01-01

Roč. 4, č. 5 (2015), "054012-1"-"054012-9" ISSN 2331-7019 R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : scintillator * electronic band gap structure * garnets * band gap engineering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.061, year: 2015

Band-edge photoluminescence in CdTe

International Nuclear Information System (INIS)

Horodysky, P.; Grill, R.; Hlidek, P.

2006-01-01

Near band-gap photoluminescence (PL) and absorption of bulk crystals of CdTe were measured over a wide range of temperatures (4-500 K). It is demonstrated that the high-temperature (above 150 K) PL intensity correlates with a lower quality of the samples and quasiparticle localization induced by the crystal potential fluctuations. The influence of the high absorption coefficient at the free-exciton resonance energy on the PL spectra is analytically studied by solving the diffusion-recombination equation. We show that the reabsorption of the radiation by the free-exciton states creates two illusory PL maxima. No dead surface layer is needed to explain reabsorption effects. The room-temperature PL maximum matches neither the free-exciton resonance nor the band-gap energy. The high temperature PL is explained by the recombination of electrons and holes localized on potential fluctuations. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Coherent control of spontaneous emission near a photonic band edge

International Nuclear Information System (INIS)

Woldeyohannes, Mesfin; John, Sajeev

2003-01-01

We demonstrate the coherent control of spontaneous emission for a three-level atom located within a photonic band gap (PBG) material, with one resonant frequency near the edge of the PBG. Spontaneous emission from the three-level atom can be totally suppressed or strongly enhanced depending on the relative phase between the steady-state control laser coupling the two upper levels and the pump laser pulse used to create an excited state of the atom in the form of a coherent superposition of the two upper levels. Unlike the free-space case, the steady-state inversion of the atomic system is strongly dependent on the externally prescribed initial conditions. This non-zero steady-state population is achieved by virtue of the localization of light in the vicinity of the emitting atom. It is robust to decoherence effects provided that the Rabi frequency of the control laser field exceeds the rate of dephasing interactions. As a result, such a system may be relevant for a single-atom, phase-sensitive optical memory device on the atomic scale. The protected electric dipole within the PBG provides a basis for a qubit to encode information for quantum computations. A detailed literature survey on the nature, fabrication and applications of PBG materials is presented to provide context for this research. (phd tutorial)

Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires

Science.gov (United States)

Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra

2018-04-01

We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor-liquid-solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy ({V}{{O}}) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of {V}{{O}} defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

Unconventional quantized edge transport in the presence of inter-edge coupling in intercalated graphene

OpenAIRE

Li, Yuanchang

2016-01-01

It is generally believed that the inter-edge coupling destroys the quantum spin Hall (QSH) effect along with the gap opening at the Dirac points. Using first-principles calculations, we find that the quantized edge transport persists in the presence of inter-edge coupling in Ta intercalated epitaxial graphene on SiC(0001), being a QSH insulator with the non-trivial gap of 81 meV. In this case, the band is characterized by two perfect Dirac cones with different Fermi velocities, yet only one m...

Robust band gap and half-metallicity in graphene with triangular perforations

DEFF Research Database (Denmark)

Gregersen, Søren Schou; Power, Stephen; Jauho, Antti-Pekka

2016-01-01

Ideal graphene antidot lattices are predicted to show promising band gap behavior (i.e., EG ≅ 500 meV) under carefully specified conditions. However, for the structures studied so far this behavior is critically dependent on superlattice geometry and is not robust against experimentally realistic...... disorders. Here we study a rectangular array of triangular antidots with zigzag edge geometries and show that their band gap behavior qualitatively differs from the standard behavior which is exhibited, e.g., by rectangular arrays of armchair-edged triangles. In the spin unpolarized case, zigzag......-edged antidots give rise to large band gaps compared to armchair-edged antidots, irrespective of the rules which govern the existence of gaps in armchair-edged antidot lattices. In addition the zigzag-edged antidots appear more robust than armchair-edged antidots in the presence of geometrical disorder...

Near-band-edge optical responses of solution-processed organic-inorganic hybrid perovskite CH3NH3PbI3 on mesoporous TiO2 electrodes

Science.gov (United States)

Yamada, Yasuhiro; Nakamura, Toru; Endo, Masaru; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

2014-03-01

We studied the near-band-edge optical responses of solution-processed CH3NH3PbI3 on mesoporous TiO2 electrodes, which is utilized in mesoscopic heterojunction solar cells. Photoluminescence (PL) and PL excitation spectra peaks appear at 1.60 and 1.64 eV, respectively. The transient absorption spectrum shows a negative peak at 1.61 eV owing to photobleaching at the band-gap energy, indicating a direct band-gap semiconductor. On the basis of the temperature-dependent PL and diffuse reflectance spectra, we clarified that the absorption tail at room temperature is explained in terms of an Urbach tail and consistently determined the band-gap energy to be ˜1.61 eV at room temperature.

The marginal band system in nymphalid butterfly wings.

Science.gov (United States)

Taira, Wataru; Kinjo, Seira; Otaki, Joji M

2015-01-01

Butterfly wing color patterns are highly complex and diverse, but they are believed to be derived from the nymphalid groundplan, which is composed of several color pattern systems. Among these pattern systems, the marginal band system, including marginal and submarginal bands, has rarely been studied. Here, we examined the color pattern diversity of the marginal band system among nymphalid butterflies. Marginal and submarginal bands are usually expressed as a pair of linear bands aligned with the wing margin. However, a submarginal band can be expressed as a broken band, an elongated oval, or a single dot. The marginal focus, usually a white dot at the middle of a wing compartment along the wing edge, corresponds to the pupal edge spot, one of the pupal cuticle spots that signify the locations of color pattern organizing centers. A marginal band can be expressed as a semicircle, an elongated oval, or a pair of eyespot-like structures, which suggest the organizing activity of the marginal focus. Physical damage at the pupal edge spot leads to distal dislocation of the submarginal band in Junonia almana and in Vanessa indica, suggesting that the marginal focus functions as an organizing center for the marginal band system. Taken together, we conclude that the marginal band system is developmentally equivalent to other symmetry systems. Additionally, the marginal band is likely a core element and the submarginal band a paracore element of the marginal band system, and both bands are primarily specified by the marginal focus organizing center.

Giant amplification in degenerate band edge slow-wave structures interacting with an electron beam

Energy Technology Data Exchange (ETDEWEB)

Othman, Mohamed A. K.; Veysi, Mehdi; Capolino, Filippo [Department of Electrical Engineering and Computer Science, University of California, Irvine, California 92697 (United States); Figotin, Alexander [Department of Mathematics, University of California, Irvine, California 92697 (United States)

2016-03-15

We propose a new amplification regime based on a synchronous operation of four degenerate electromagnetic (EM) modes in a slow-wave structure and the electron beam, referred to as super synchronization. These four EM modes arise in a Fabry-Pérot cavity when degenerate band edge (DBE) condition is satisfied. The modes interact constructively with the electron beam resulting in superior amplification. In particular, much larger gains are achieved for smaller beam currents compared to conventional structures based on synchronization with only a single EM mode. We demonstrate giant gain scaling with respect to the length of the slow-wave structure compared to conventional Pierce type single mode traveling wave tube amplifiers. We construct a coupled transmission line model for a loaded waveguide slow-wave structure exhibiting a DBE, and investigate the phenomenon of giant gain via super synchronization using the Pierce model generalized to multimode interaction.

High-energy band structure of gold

DEFF Research Database (Denmark)

Christensen, N. Egede

1976-01-01

The band structure of gold for energies far above the Fermi level has been calculated using the relativistic augmented-plane-wave method. The calculated f-band edge (Γ6-) lies 15.6 eV above the Fermi level is agreement with recent photoemission work. The band model is applied to interpret...

Edge-based correlation image registration for multispectral imaging

Science.gov (United States)

Nandy, Prabal [Albuquerque, NM

2009-11-17

Registration information for images of a common target obtained from a plurality of different spectral bands can be obtained by combining edge detection and phase correlation. The images are edge-filtered, and pairs of the edge-filtered images are then phase correlated to produce phase correlation images. The registration information can be determined based on these phase correlation images.

Robust band gap and half-metallicity in graphene with triangular perforations

Science.gov (United States)

Gregersen, Søren Schou; Power, Stephen R.; Jauho, Antti-Pekka

2016-06-01

Ideal graphene antidot lattices are predicted to show promising band gap behavior (i.e., EG≃500 meV) under carefully specified conditions. However, for the structures studied so far this behavior is critically dependent on superlattice geometry and is not robust against experimentally realistic disorders. Here we study a rectangular array of triangular antidots with zigzag edge geometries and show that their band gap behavior qualitatively differs from the standard behavior which is exhibited, e.g., by rectangular arrays of armchair-edged triangles. In the spin unpolarized case, zigzag-edged antidots give rise to large band gaps compared to armchair-edged antidots, irrespective of the rules which govern the existence of gaps in armchair-edged antidot lattices. In addition the zigzag-edged antidots appear more robust than armchair-edged antidots in the presence of geometrical disorder. The inclusion of spin polarization within a mean-field Hubbard approach gives rise to a large overall magnetic moment at each antidot due to the sublattice imbalance imposed by the triangular geometry. Half-metallic behavior arises from the formation of spin-split dispersive states near the Fermi energy, reducing the band gaps compared to the unpolarized case. This behavior is also found to be robust in the presence of disorder. Our results highlight the possibilities of using triangular perforations in graphene to open electronic band gaps in systems with experimentally realistic levels of disorder, and furthermore, of exploiting the strong spin dependence of the system for spintronic applications.

Inter-band and intra-band reflections in graphene–insulator–superconductor junctions with zigzag or armchair edge

Energy Technology Data Exchange (ETDEWEB)

Duque, M.F., E-mail: mfduqued@unal.edu.co; Gomez P, S., E-mail: sgomezp@unal.edu.co; Herrera, W.J., E-mail: jherreraw@unal.edu.co

2014-12-15

We analyze electron–electron and Andreev reflections (AR) for a graphene–insulator–superconductor junction for zigzag and armchair edges, where the insulator is modeled as a potential barrier characterized by a strength. We calculate the reflection probabilities and differential conductance using the Bogoliubov–de Gennes–Dirac (BdGD) equations. For low doping values and zigzag edge the reflection coefficients have the same behavior that in a graphene–superconductor junction. However for high doping values the reflection probabilities have a periodicity of πwith the strength barrier values. For high doping values and armchair edge the electron–electron reflections associated to K′ valley increase and AR associated to K valley decrease. We compare our results with the differential conductance obtained by the Green formalism. We show that the effect of barrier strength for high doping resembles the behavior when a hopping between graphene and superconductor interfaces is considered.

Chiral topological excitons in a Chern band insulator

Science.gov (United States)

Chen, Ke; Shindou, Ryuichi

2017-10-01

A family of semiconductors called Chern band insulators are shown to host exciton bands with nonzero topological Chern integers and chiral exciton edge modes. Using a prototypical two-band Chern insulator model, we calculate a cross-correlation function to obtain the exciton bands and their Chern integers. The lowest exciton band acquires Chern integers such as ±1 and ±2 in the electronic Chern insulator phase. The nontrivial topology can be experimentally observed both by a nonlocal optoelectronic response of exciton edge modes and by a phase shift in the cross-correlation response due to the bulk mode. Our result suggests that magnetically doped HgTe, InAs/GaSb quantum wells, and (Bi,Sb)2Te3 thin films are promising candidates for a platform of topological excitonics.

The complex band structure for armchair graphene nanoribbons

International Nuclear Information System (INIS)

Zhang Liu-Jun; Xia Tong-Sheng

2010-01-01

Using a tight binding transfer matrix method, we calculate the complex band structure of armchair graphene nanoribbons. The real part of the complex band structure calculated by the transfer matrix method fits well with the bulk band structure calculated by a Hermitian matrix. The complex band structure gives extra information on carrier's decay behaviour. The imaginary loop connects the conduction and valence band, and can profoundly affect the characteristics of nanoscale electronic device made with graphene nanoribbons. In this work, the complex band structure calculation includes not only the first nearest neighbour interaction, but also the effects of edge bond relaxation and the third nearest neighbour interaction. The band gap is classified into three classes. Due to the edge bond relaxation and the third nearest neighbour interaction term, it opens a band gap for N = 3M − 1. The band gap is almost unchanged for N = 3M + 1, but decreased for N = 3M. The maximum imaginary wave vector length provides additional information about the electrical characteristics of graphene nanoribbons, and is also classified into three classes

Madelung and Hubbard interactions in polaron band model of doped organic semiconductors

Science.gov (United States)

Png, Rui-Qi; Ang, Mervin C.Y.; Teo, Meng-How; Choo, Kim-Kian; Tang, Cindy Guanyu; Belaineh, Dagmawi; Chua, Lay-Lay; Ho, Peter K.H.

2016-01-01

The standard polaron band model of doped organic semiconductors predicts that density-of-states shift into the π–π* gap to give a partially filled polaron band that pins the Fermi level. This picture neglects both Madelung and Hubbard interactions. Here we show using ultrahigh workfunction hole-doped model triarylamine–fluorene copolymers that Hubbard interaction strongly splits the singly-occupied molecular orbital from its empty counterpart, while Madelung (Coulomb) interactions with counter-anions and other carriers markedly shift energies of the frontier orbitals. These interactions lower the singly-occupied molecular orbital band below the valence band edge and give rise to an empty low-lying counterpart band. The Fermi level, and hence workfunction, is determined by conjunction of the bottom edge of this empty band and the top edge of the valence band. Calculations are consistent with the observed Fermi-level downshift with counter-anion size and the observed dependence of workfunction on doping level in the strongly doped regime. PMID:27582355

Self-consistent study of localization near band edges

International Nuclear Information System (INIS)

Brezini, A.

1982-02-01

The localization criterion of Kumar et al. is applied to the case of a uniform distribution for the site energies and particular attention is given to the behaviour of the mobility edge in the limit of weak disorder. The results are similar to other theories but disagree with that of Abou-Chacra and Thouless in the limit of zero disorder. (author)

Photoreflectance study of the near-band-edge transitions of chemical vapor deposition-grown mono- and few-layer MoS{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Lin, Kuang-I, E-mail: kilin@mail.ncku.edu.tw [Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); Chen, Yen-Jen; Wang, Bo-Yan; Cheng, Yung-Chen [Department of Materials Science, National University of Tainan, Tainan 70005, Taiwan (China); Chen, Chang-Hsiao, E-mail: chsiaoc@fcu.edu.tw [Department of Automatic Control Engineering, Feng Chia University, Taichung 40724, Taiwan (China)

2016-03-21

Room-temperature photoreflectance (PR) and reflectance (R) spectroscopy are utilized to investigate the near-band-edge transitions of molybdenum disulfide (MoS{sub 2}) thin films grown on sapphire substrates by a hot-wall chemical vapor deposition system. The layer thickness and optical properties of the MoS{sub 2} thin films are confirmed by Raman spectroscopy, atomic force microscope, and photoluminescence (PL) analysis. The B exciton shows relatively weak PL intensity in comparing with the A exciton even for monolayer MoS{sub 2} films. In the R spectrum of few‐layer MoS{sub 2}, it is not possible to clearly observe exciton related features. The PR spectra have two sharp, derivative-like features on a featureless background. Throughout the PR lineshape fitting, the transition energies are designated as the A and B excitons at the K-point of the Brillouin zone, but at room temperature there seems to be no distinguishable feature corresponding to an H‐point transition for the mono- and few-layer MoS{sub 2} films unlike in bulk. These transition energies are slightly larger than those obtained by PL, which is attributed to the Stokes shifts related to doping level. The obtained values of valence-band spin-orbit splitting are in good agreement with those from other experimental methods. By comparing the PR lineshapes, the dominant modulation mechanism is attributed to variations of the exciton transition energies due to change in the built-in electric field. On the strength of this study, PR spectroscopy is demonstrated as a powerful technique for characterizing the near-band-edge transitions of MoS{sub 2} from monolayer to bulk.

Keeping the band together: evidence for false boundary disruptive coloration in a butterfly.

Science.gov (United States)

Seymoure, B M; Aiello, A

2015-09-01

There is a recent surge of evidence supporting disruptive coloration, in which patterns break up the animal's outline through false edges or boundaries, increasing survival in animals by reducing predator detection and/or preventing recognition. Although research has demonstrated that false edges are successful for reducing predation of prey, research into the role of internal false boundaries (i.e. stripes and bands) in reducing predation remains warranted. Many animals have stripes and bands that may function disruptively. Here, we test the possible disruptive function of wing band patterning in a butterfly, Anartia fatima, using artificial paper and plasticine models in Panama. We manipulated the band so that one model type had the band shifted to the wing margin (nondisruptive treatment) and another model had a discontinuous band located on the wing margin (discontinuous edge treatment). We kept the natural wing pattern to represent the false boundary treatment. Across all treatment groups, we standardized the area of colour and used avian visual models to confirm a match between manipulated and natural wing colours. False boundary models had higher survival than either the discontinuous edge model or the nondisruptive model. There was no survival difference between the discontinuous edge model and the nondisruptive model. Our results demonstrate the importance of wing bands in reducing predation on butterflies and show that markings set in from the wing margin can reduce predation more effectively than marginal bands and discontinuous marginal patterns. This study demonstrates an adaptive benefit of having stripes and bands. © 2015 European Society For Evolutionary Biology.

Bulk and edge spin transport in topological magnon insulators

Science.gov (United States)

Rückriegel, Andreas; Brataas, Arne; Duine, Rembert A.

2018-02-01

We investigate the spin transport properties of a topological magnon insulator, a magnetic insulator characterized by topologically nontrivial bulk magnon bands and protected magnon edge modes located in the bulk band gaps. Employing the Landau-Lifshitz-Gilbert phenomenology, we calculate the spin current driven through a normal metal |topological magnon insulator |normal metal heterostructure by a spin accumulation imbalance between the metals, with and without random lattice defects. We show that bulk and edge transport are characterized by different length scales. This results in a characteristic system size where the magnon transport crosses over from being bulk dominated for small systems to edge dominated for larger systems. These findings are generic and relevant for topological transport in systems of nonconserved bosons.

Doping and bond length contributions to Mn K-edge shift in La1 ...

Indian Academy of Sciences (India)

... corresponds to the shift in the center of gravity of the unoccupied Mn 4-band contributing to the Mn K-absorption edge region. This correspondence is then used to separate the doping and size contributions to the edge shift due to variation in the number of electrons in valence band and Mn-O bond lengths, respectively, ...

Bulk and edge spin transport in topological magnon insulators

NARCIS (Netherlands)

Rückriegel, A.; Brataas, A.; Duine, R.A.

2018-01-01

We investigate the spin transport properties of a topological magnon insulator, a magnetic insulator characterized by topologically nontrivial bulk magnon bands and protected magnon edge modes located in the bulk band gaps. Employing the Landau-Lifshitz-Gilbert phenomenology, we calculate the spin

Magnetism of zigzag edge phosphorene nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Zhu, Zhili, E-mail: zlzhu@zzu.edu.cn, E-mail: jiayu@zzu.edu.cn; Li, Chong; Yu, Weiyang; Chang, Dahu; Sun, Qiang; Jia, Yu, E-mail: zlzhu@zzu.edu.cn, E-mail: jiayu@zzu.edu.cn [International Joint Research Laboratory for Quantum Functional Materials of Henan, and School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001 (China)

2014-09-15

We have investigated, by means of ab initio calculations, the electronic and magnetic structures of zigzag edge phosphorene nanoribbons (ZPNRs) with various widths. The stable magnetic state was found in pristine ZPNRs by allowing the systems to be spin-polarized. The ground state of pristine ZPNRs prefers ferromagnetic order in the same edge but antiferromagnetic order between two opposite edges. The magnetism arises from the dangling bond states as well as edge localized π-orbital states. The presence of a dangling bond is crucial to the formation of the magnetism of ZPNRs. The hydrogenated ZPNRs get nonmagnetic semiconductors with a direct band gap. While, the O-saturated ZPNRs show magnetic ground states due to the weak P-O bond in the ribbon plane between the p{sub z}-orbitals of the edge O and P atoms.

Edge states of a periodic chain with four-band energy spectrum

International Nuclear Information System (INIS)

Eliashvili, Merab; Kereselidze, Davit; Tsitsishvili, George; Tsitsishvili, Mikheil

2017-01-01

Tight-binding model on a finite chain is studied with four-fold alternated hopping parameters t_1_,_2_,_3_,_4. Imposing the open boundary conditions, the corresponding recursion is solved analytically with special attention paid to the occurrence of edge states. Corresponding results are strongly corroborated by numeric calculations. It is shown that in the system there exist four different edge phases if the number of sites is odd, and eight edges phases if the chain comprises even number of sites. Phases are labelled by σ_1 ≡ sgn(t_1t_3 − t_2t_4), σ_2 ≡ sgn(t_1t_4 − t_2t_3), and σ_3 ≡ sgn(t_1t_2 − t_3t_4). It is shown that σ_1_,_2_,_3 represent gauge invariant topological indices emerging in the corresponding infinite chains. (author)

Simulation study of CD variation caused by field edge effects and out-of-band radiation in EUVL

Science.gov (United States)

Gao, Weimin; Niroomand, Ardavan; Lorusso, Gian F.; Boone, Robert; Lucas, Kevin; Demmerle, Wolfgang

2013-09-01

Although extreme ultraviolet lithography (EUVL) remains a promising candidate for semiconductor device manufacturing of the 1x nm half pitch node and beyond, many technological burdens have to be overcome. The "field edge effect" in EUVL is one of them. The image border region of an EUV mask,also known as the "black border" (BB), reflects a few percent of the incident EUV light, resulting in a leakage of light into neighboring exposure fields, especially at the corner of the field where three adjacent exposures take place. This effect significantly impacts on CD uniformity (CDU) across the exposure field. To avoid this phenomenon, a light-shielding border is introduced by etching away the entire absorber and multi-layer (ML)at the image border region of the EUV mask. In this paper, we present a method of modeling the field edge effect (also called the BB effect) by using rigorous lithography simulation with a calibrated resist model. An additional "flare level" at the field edge is introduced on top of the exposure tool flare map to account for the BB effect. The parameters in this model include the reflectivity and the width of the BB, which are mainly determining the leakage of EUV light and its influence range, respectively. Another parameter is the transition width which represents the half shadow effect of the reticle masking blades. By setting the corresponding parameters, the simulation results match well the experimental results obtained at the imec's NXE:3100 EUV exposure tool. Moreover, these results indicate that the out-of-band (OoB) radiation also contributes to the CDU. Using simulation we can also determine the OoB effect rigorouslyusing the methodology of an "effective mask blank". The study in this paper demonstrates that the impact of BB and OoB effects on CDU can be well predicted by simulations.

Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap

International Nuclear Information System (INIS)

Miedema, P.S.; Beye, M.; Könnecke, R.; Schiwietz, G.; Föhlisch, A.

2014-01-01

Highlights: • Conduction band minima (CBM) of 6H-SiC are estimated with Si 2p XAS. • Valence band maxima (VBM) of 6H-SiC are estimated with non-resonant Si 2p XES. • Temperature-dependent VBM and CBM of 6H-SiC show asymmetric band gap closing. • XAS, XES and RIXS band gap estimates are compared with the optical band gap. • XAS + XES versus optical band gap provides core-excitonic screening energies. - Abstract: The band gap of semiconductors like silicon and silicon carbide (SiC) is the key for their device properties. In this research, the band gap of 6H-SiC and its temperature dependence were analyzed with silicon 2p X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS) allowing for a separate analysis of the conduction-band minimum (CBM) and valence-band maximum (VBM) components of the band gap. The temperature-dependent asymmetric band gap shrinking of 6H-SiC was determined with a valence-band slope of +2.45 × 10 −4 eV/K and a conduction-band slope of −1.334 × 10 −4 eV/K. The apparent asymmetry, e.g., that two thirds of the band-gap shrinking with increasing temperature is due to the VBM evolution in 6H-SiC, is similar to the asymmetry obtained for pure silicon before. The overall band gap temperature-dependence determined with XAS and non-resonant XES is compared to temperature-dependent optical studies. The core-excitonic binding energy appearing in the Si 2p XAS is extracted as the main difference. In addition, the energy loss of the onset of the first band in RIXS yields to values similar to the optical band gap over the tested temperature range

Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In ₂ O ₃ nanowires

Energy Technology Data Exchange (ETDEWEB)

Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra

2018-03-01

We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor–liquid–solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy (VO) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of VO defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor

Directory of Open Access Journals (Sweden)

Yaser M. Banadaki

2016-03-01

Full Text Available In this paper, we present a physics-based analytical model of GNR FET, which allows for the evaluation of GNR FET performance including the effects of line-edge roughness as its practical specific non-ideality. The line-edge roughness is modeled in edge-enhanced band-to-band-tunneling and localization regimes, and then verified for various roughness amplitudes. Corresponding to these two regimes, the off-current is initially increased, then decreased; while, on the other hand, the on-current is continuously decreased by increasing the roughness amplitude.

Effects of edge magnetism on the Kohn anomalies of zigzag graphene nanoribbons

International Nuclear Information System (INIS)

Culchac, F J; Capaz, Rodrigo B

2016-01-01

The effects of edge magnetism on the Kohn anomaly (KA) of the G-band phonons of zigzag graphene nanoribbons (ZGNRs) are studied using a combination of the tight-binding and mean-field Hubbard models. We show that the opening of an energy gap, induced by magnetic ordering, significantly changes the KA effects, particularly for narrow ribbons in which the gap is larger than the phonon energy. Therefore, the G-band phonon frequency and lifetime are altered for a magnetically-ordered edge state with respect to an unpolarized edge state. The effects of temperature, ZGNR width, doping and transverse electric fields are systematically investigated. We propose using this effect to probe the magnetic order of edge states in graphene nanoribbons using Raman spectroscopy. (paper)

Modeling cell elongation during germ band retraction: cell autonomy versus applied anisotropic stress

International Nuclear Information System (INIS)

Lynch, Holley E; Shane Hutson, M; Veldhuis, Jim; Wayne Brodland, G

2014-01-01

The morphogenetic process of germ band retraction in Drosophila embryos involves coordinated movements of two epithelial tissues—germ band and amnioserosa. The germ band shortens along its rostral–caudal or head-to-tail axis, widens along its perpendicular dorsal-ventral axis, and uncurls from an initial ‘U’ shape. The amnioserosa mechanically assists this process by pulling on the crook of the U-shaped germ band. The amnioserosa may also provide biochemical signals that drive germ band cells to change shape in a mechanically autonomous fashion. Here, we use a finite-element model to investigate how these two contributions reshape the germ band. We do so by modeling the response to laser-induced wounds in each of the germ band’s spatially distinct segments (T1–T3, A1–A9) during the middle of retraction when segments T1–A3 form the ventral arm of the ‘U’, A4–A7 form its crook, and A8–A9 complete the dorsal arm. We explore these responses under a range of externally applied stresses and internal anisotropy of cell edge tensions—akin to a planar cell polarity that can drive elongation of cells in a direction parallel to the minimum edge tension—and identify regions of parameter space (edge-tension anisotropy versus stress anisotropy) that best match previous experiments for each germ band segment. All but three germ band segments are best fit when the applied stress anisotropy and the edge-tension anisotropy work against one another—i.e., when the isolated effects would elongate cells in perpendicular directions. Segments in the crook of the germ band (A4–A7) have cells that elongate in the direction of maximum external stress, i.e., external stress anisotropy is dominant. In most other segments, the dominant factor is internal edge-tension anisotropy. These results are consistent with models in which the amnioserosa pulls on the crook of the germ band to mechanically assist retraction. In addition, they suggest a mechanical cue for

Determination of density of band-gap states of hydrogenated amorphous silicon suboxide thin films

International Nuclear Information System (INIS)

Bacioglu, A.

2005-01-01

Variation of density of gap states of PECVD silicon suboxide films with different oxygen concentrations was evaluated through electrical and optical measurements. Optical transmission and constant photocurrent method (CPM) were used to determine absorption coefficient as a function of photon energy. From these measurements the localized density of states between the valance band mobility edge and Fermi level has been determined. To determine the variation of conduction band edge, steady state photoconductivity (SSPC), photoconductivity response time (PCRT) and transient photoconductivity (TPC) measurements were utilized. Results indicate that the conduction and valance band edges, both, widen monotonically with oxygen content

Green's function asymptotics near the internal edges of spectra of periodic elliptic operators. Spectral edge case

KAUST Repository

Kuchment, Peter

2012-06-21

Precise asymptotics known for the Green\\'s function of the Laplace operator have found their analogs for periodic elliptic operators of the second order at and below the bottom of the spectrum. Due to the band-gap structure of the spectra of such operators, the question arises whether similar results can be obtained near or at the edges of spectral gaps. As the result of this work shows, this is possible at a spectral edge when the dimension d ≥ 3. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Green's function asymptotics near the internal edges of spectra of periodic elliptic operators. Spectral edge case

KAUST Repository

Kuchment, Peter; Raich, Andrew

2012-01-01

Precise asymptotics known for the Green's function of the Laplace operator have found their analogs for periodic elliptic operators of the second order at and below the bottom of the spectrum. Due to the band-gap structure of the spectra of such operators, the question arises whether similar results can be obtained near or at the edges of spectral gaps. As the result of this work shows, this is possible at a spectral edge when the dimension d ≥ 3. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Plasmons on the edge of MoS2 nanostructures

DEFF Research Database (Denmark)

Andersen, Kirsten; Jacobsen, Karsten Wedel; Thygesen, Kristian Sommer

2014-01-01

Using ab initio calculations we predict the existence of one-dimensional (1D), atomically confined plasmons at the edges of a zigzag MoS2 nanoribbon. The strongest plasmon originates from a metallic edge state localized on the sulfur dimers decorating the Mo edge of the ribbon. A detailed analysis...... of the dielectric function reveals that the observed deviations from the ideal 1D plasmon behavior result from single-particle transitions between the metallic edge state and the valence and conduction bands of the MoS2 sheet. The Mo and S edges of the ribbon are clearly distinguishable in calculated spatially...... resolved electron energy loss spectrum owing to the different plasmonic properties of the two edges. The edge plasmons could potentially be utilized for tuning the photocatalytic activity of MoS2 nanoparticles....

Two-dimensionally confined topological edge states in photonic crystals

International Nuclear Information System (INIS)

Barik, Sabyasachi; Miyake, Hirokazu; DeGottardi, Wade; Waks, Edo; Hafezi, Mohammad

2016-01-01

We present an all-dielectric photonic crystal structure that supports two-dimensionally confined helical topological edge states. The topological properties of the system are controlled by the crystal parameters. An interface between two regions of differing band topologies gives rise to topological edge states confined in a dielectric slab that propagate around sharp corners without backscattering. Three-dimensional finite-difference time-domain calculations show these edges to be confined in the out-of-plane direction by total internal reflection. Such nanoscale photonic crystal architectures could enable strong interactions between photonic edge states and quantum emitters. (paper)

High-Harmonic Generation in Solids with and without Topological Edge States

DEFF Research Database (Denmark)

Bauer, Dieter; Hansen, Kenneth Christian Klochmann

2018-01-01

High-harmonic generation in the two topological phases of a finite, one-dimensional, periodic structure is investigated using a self-consistent time-dependent density functional theory approach. For harmonic photon energies smaller than the band gap, the harmonic yield is found to differ by up...... to 14 orders of magnitude for the two topological phases. This giant topological effect is explained by the degree of destructive interference in the harmonic emission of all valence-band (and edge-state) electrons, which strongly depends on whether or not topological edge states are present...

Experimental determination of conduction and valence bands of semiconductor nanoparticles using Kelvin probe force microscopy

International Nuclear Information System (INIS)

Zhang Wen; Chen Yongsheng

2013-01-01

The ability to determine a semiconductor’s band edge positions is important for the design of new photocatalyst materials. In this paper, we introduced an experimental method based on Kelvin probe force microscopy to determine the conduction and valence band edge energies of semiconductor nanomaterials, which has rarely been demonstrated. We tested the method on six semiconductor nanoparticles (α-Fe 2 O 3 , CeO 2 , Al 2 O 3 , CuO, TiO 2 , and ZnO) with known electronic structures. The experimentally determined band edge positions for α-Fe 2 O 3 , Al 2 O 3 , and CuO well matched the literature values with no statistical difference. Except CeO 2 , all other metal oxides had a consistent upward bias in the experimental measurements of band edge positions because of the shielding effect of the adsorbed surface water layer. This experimental approach may outstand as a unique alternative way of probing the band edge energy positions of semiconductor materials to complement the current computational methods, which often find limitations in new synthetic or complex materials. Ultimately, this work provides scientific foundation for developing experimental tools to probe nanoscale electronic properties of photocatalytic materials, which will drive breakthroughs in the design of novel photocatalytic systems and advance the fundamental understanding of material properties.

Effects of edge reconstruction on the common groups terminated zigzag phosphorene nanoribbon

International Nuclear Information System (INIS)

Xiao, Huaping; Guo, Sumei; Zhang, Chunxiao; He, Chaoyu; Zhong, Jianxin

2017-01-01

Edge configuration plays an important role in the electronic properties of nano-structures. In this work, we perform first-principles calculations to study the effects of the cooperation between neighbor groups on the edge configuration and the electronic properties of zigzag-PNRs (ZPNRs) terminated by common groups H, F, O, S and OH. We find that the cooperation has little effect on the H(F)-terminated ZPNRs, but gives rise to an edge reconstruction for the O(S)-terminated ZPNRs. The edge reconstruction derives from the repulsion between neighbor O atoms and the distortion of the P skeleton induced by the p state coupling among the edge, second edge and third edge P atoms. In comparison to the H-terminated ZPNRs, O-terminated ZPNRs are also a semiconductor and enlarge the band gap, but bring about an extra transport channel for the charge transport at the edge and decreases the effective mass of the electron and hole. OH-terminated ZPNRs also undergo a doubling of the unit cell (UC) along the periodic direction because of the different directions of the neighbor O–H bonds. In comparison with the H-terminated ZPNRs, OH-terminated ZPNRs show a similar band gap and electronic effective mass, but increase the effective mass of the hole. (paper)

Photonic band edge assisted spontaneous emission enhancement from all Er3+ 1-D photonic band gap structure

Science.gov (United States)

Chiasera, A.; Meroni, C.; Varas, S.; Valligatla, S.; Scotognella, F.; Boucher, Y. G.; Lukowiak, A.; Zur, L.; Righini, G. C.; Ferrari, M.

2018-06-01

All Er3+ doped dielectric 1-D Photonic Band Gap Structure was fabricated by rf-sputtering technique. The structure was constituted by of twenty pairs of SiO2/TiO2 alternated layers doped with Er3+ ions. The scanning electron microscopy was used to check the morphology of the structure. Transmission measurements put in evidence the stop band in the range 1500 nm-1950 nm. The photoluminescence measurements were obtained by optically exciting the sample and detecting the emitted light in the 1.5 μm region at different detection angles. Luminescence spectra and luminescence decay curves put in evidence that the presence of the stop band modify the emission features of the Er3+ ions.

Floquet edge states in germanene nanoribbons

KAUST Repository

Tahir, Muhammad

2016-08-23

We theoretically demonstrate versatile electronic properties of germanene monolayers under circularly, linearly, and elliptically polarized light. We show for the high frequency regime that the edge states can be controlled by tuning the amplitude of the light and by applying a static electric field. For circularly polarized light the band gap in one valley is reduced and in the other enhanced, enabling single valley edge states. For linearly polarized light spin-split states are found for both valleys, being connected by time reversal symmetry. The effects of elliptically polarized light are similar to those of circularly polarized light. The transport properties of zigzag nanoribbons in the presence of disorder confirm a nontrivial nature of the edge states under circularly and elliptically polarized light.

Tunable electronic properties of partially edge-hydrogenated armchair boron-nitrogen-carbon nanoribbons.

Science.gov (United States)

Alaal, Naresh; Medhekar, Nikhil; Shukla, Alok

2018-04-18

We employ a first-principles calculations based density-functional-theory (DFT) approach to study the electronic properties of partially and fully edge-hydrogenated armchair boron-nitrogen-carbon (BNC) nanoribbons (ABNCNRs), with widths between 0.85 nm to 2.3 nm. Due to the partial passivation of edges, the electrons, which do not participate in the bonding, form new energy states located near the Fermi-level. Because of these additional bands, some ABNCNRs exhibit metallic behavior, which is quite uncommon in armchair nanoribbons. Our calculations reveal that metallic behavior is observed for the following passivation patterns: (i) when the B atom from one edge and the N atom from another edge are unpassivated. (ii) when the N atoms from both the edges are unpassivated. (iii) when the C atom from one edge and the N atom from another edge are unpassivated. Furthermore, spin-polarization is also observed for certain passivation schemes, which is also quite uncommon for armchair nanoribbons. Thus, our results suggest that the ABNCNRs exhibit a wide range of electronic and magnetic properties in that the fully edge-hydrogenated ABNCNRs are direct band gap semiconductors, while the partially edge-hydrogenated ones are either semiconducting, or metallic, while simultaneously exhibiting spin polarization, based on the nature of passivation. We also find that the ribbons with larger widths are more stable as compared to the narrower ones.

Fermi-edge superfluorescence from a quantum-degenerate electron-hole gas

Science.gov (United States)

Kim, Ji-Hee; , G. Timothy Noe, II; McGill, Stephen A.; Wang, Yongrui; Wójcik, Aleksander K.; Belyanin, Alexey A.; Kono, Junichiro

2013-11-01

Nonequilibrium can be a source of order. This rather counterintuitive statement has been proven to be true through a variety of fluctuation-driven, self-organization behaviors exhibited by out-of-equilibrium, many-body systems in nature (physical, chemical, and biological), resulting in the spontaneous appearance of macroscopic coherence. Here, we report on the observation of spontaneous bursts of coherent radiation from a quantum-degenerate gas of nonequilibrium electron-hole pairs in semiconductor quantum wells. Unlike typical spontaneous emission from semiconductors, which occurs at the band edge, the observed emission occurs at the quasi-Fermi edge of the carrier distribution. As the carriers are consumed by recombination, the quasi-Fermi energy goes down toward the band edge, and we observe a continuously red-shifting streak. We interpret this emission as cooperative spontaneous recombination of electron-hole pairs, or superfluorescence (SF), which is enhanced by Coulomb interactions near the Fermi edge. This novel many-body enhancement allows the magnitude of the spontaneously developed macroscopic polarization to exceed the maximum value for ordinary SF, making electron-hole SF even more ``super'' than atomic SF.

X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

International Nuclear Information System (INIS)

Sancho-Juan, O; Cantarero, A; Garro, N; Cros, A; Martinez-Criado, G; Salome, M; Susini, J; Olguin, D; Dhar, S

2009-01-01

By means of x-ray absorption near-edge structure (XANES) several Ga 1-x Mn x N (0.03 2 ↑ band localized in the gap region, and the corresponding anti-bonding state t 2 ↓, which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

The giant Stark effect in armchair-edge phosphorene nanoribbons under a transverse electric field

Science.gov (United States)

Zhou, Benliang; Zhou, Benhu; Liu, Pu; Zhou, Guanghui

2018-01-01

We study the variation of electronic properties for armchair-edge phosphorene nanoribbons (APNRs) modulated by a transverse electric field. Within the tight-binding model Hamiltonian, and by solving the differential Schrödinger equation, we find that a band gap closure appears at the critical field due to the giant Stark effect for an APNR. The gap closure has no field polarity, and the gap varies quadratically for small fields but becomes linear for larger ones. We attribute the giant Stark effect to the broken edge degeneracy, i.e., the charge redistributions of the conduction band minimum and valence band maximum states localized at opposite edges induced by the field. By combined with the Green's function approach, it is shown that in the presence of the critical field a gap of density of states (DOS) disappears and a high value DOS turns up at the energy position of the band gap closure. Finally, as the field increases, we find the band gap decreases more rapidly and the gap closure occurs at smaller fields for wider ribbons. Both the band gap and DOS variations with the field show an insulator-metal transition induced by a transverse electric field for the APNR. Our results show that wider APNRs are more appreciable to design field-effect transistors.

Edge magnetism impact on electrical conductance and thermoelectric properties of graphenelike nanoribbons

Science.gov (United States)

Krompiewski, Stefan; Cuniberti, Gianaurelio

2017-10-01

Edge states in narrow quasi-two-dimensional nanostructures determine, to a large extent, their electric, thermoelectric, and magnetic properties. Nonmagnetic edge states may quite often lead to topological-insulator-type behavior. However, another scenario develops when the zigzag edges are magnetic and the time reversal symmetry is broken. In this work we report on the electronic band structure modifications, electrical conductance, and thermoelectric properties of narrow zigzag nanoribbons with spontaneously magnetized edges. Theoretical studies based on the Kane-Mele-Hubbard tight-binding model show that for silicene, germanene, and stanene both the Seebeck coefficient and the thermoelectric power factor are strongly enhanced for energies close to the charge neutrality point. A perpendicular gate voltage lifts the spin degeneracy of energy bands in the ground state with antiparallel magnetized zigzag edges and makes the electrical conductance significantly spin polarized. Simultaneously the gate voltage worsens the thermoelectric performance. Estimated room-temperature figures of merit for the aforementioned nanoribbons can exceed a value of 3 if phonon thermal conductances are adequately reduced.

Anomalous edge states and the bulk-edge correspondence for periodically-driven two dimensional systems

DEFF Research Database (Denmark)

Rudner, Mark Spencer; Lindner, Netanel; Berg, Erez

2013-01-01

revealed phenomena that cannot be characterized by analogy to the topological classification framework for static systems. In particular, in driven systems in two dimensions (2D), robust chiral edge states can appear even though the Chern numbers of all the bulk Floquet bands are zero. Here, we elucidate...... the crucial distinctions between static and driven 2D systems, and construct a new topological invariant that yields the correct edge-state structure in the driven case. We provide formulations in both the time and frequency domains, which afford additional insight into the origins of the “anomalous” spectra...... that arise in driven systems. Possibilities for realizing these phenomena in solid-state and cold-atomic systems are discussed....

Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

KAUST Repository

Hinkle, C. L.; Galatage, R. V.; Chapman, R. A.; Vogel, E. M.; Alshareef, Husam N.; Freeman, C.; Christensen, M.; Wimmer, E.; Niimi, H.; Li-Fatou, A.; Shaw, J. B.; Chambers, J. J.

2012-01-01

Silicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt.

Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

KAUST Repository

Hinkle, C. L.

2012-04-09

Silicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt.

Selective Population of Edge States in a 2D Topological Band System.

Science.gov (United States)

Galilo, Bogdan; Lee, Derek K K; Barnett, Ryan

2015-12-11

We consider a system of interacting spin-one atoms in a hexagonal lattice under the presence of a synthetic gauge field. Quenching the quadratic Zeeman field is shown to lead to a dynamical instability of the edge modes. This, in turn, leads to a spin current along the boundary of the system which grows exponentially fast in time following the quench. Tuning the magnitude of the quench can be used to selectively populate edge modes of different momenta. Implications of the intrinsic symmetries of the Hamiltonian on the dynamics are discussed. The results hold for atoms with both antiferromagnetic and ferromagnetic interactions.

Strong coupling between a permalloy ferromagnetic contact and helical edge channel in a narrow HgTe quantum well

Energy Technology Data Exchange (ETDEWEB)

Kononov, A.; Egorov, S. V. [Russian Academy Sciences, Institute of Solid State Physics (Russian Federation); Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A. [Institute of Semiconductor Physics (Russian Federation); Deviatov, E. V., E-mail: dev@issp.ac.ru [Russian Academy Sciences, Institute of Solid State Physics (Russian Federation)

2016-11-15

We experimentally investigate spin-polarized electron transport between a permalloy ferromagnet and the edge of a two-dimensional electron system with band inversion, realized in a narrow, 8 nm wide, HgTe quantum well. In zero magnetic field, we observe strong asymmetry of the edge potential distribution with respect to the ferromagnetic ground lead. This result indicates that the helical edge channel, specific for the structures with band inversion even at the conductive bulk, is strongly coupled to the ferromagnetic side contact, possibly due to the effects of proximity magnetization. This allows selective and spin-sensitive contacting of helical edge states.

Finite size effects on the helical edge states on the Lieb lattice

International Nuclear Information System (INIS)

Chen Rui; Zhou Bin

2016-01-01

For a two-dimensional Lieb lattice, that is, a line-centered square lattice, the inclusion of the intrinsic spin–orbit (ISO) coupling opens a topologically nontrivial gap, and gives rise to the quantum spin Hall (QSH) effect characterized by two pairs of gapless helical edge states within the bulk gap. Generally, due to the finite size effect in QSH systems, the edge states on the two sides of a strip of finite width can couple together to open a gap in the spectrum. In this paper, we investigate the finite size effect of helical edge states on the Lieb lattice with ISO coupling under three different kinds of boundary conditions, i.e., the straight, bearded and asymmetry edges. The spectrum and wave function of edge modes are derived analytically for a tight-binding model on the Lieb lattice. For a strip Lieb lattice with two straight edges, the ISO coupling induces the Dirac-like bulk states to localize at the edges to become the helical edge states with the same Dirac-like spectrum. Moreover, it is found that in the case with two straight edges the gapless Dirac-like spectrum remains unchanged with decreasing the width of the strip Lieb lattice, and no gap is opened in the edge band. It is concluded that the finite size effect of QSH states is absent in the case with the straight edges. However, in the other two cases with the bearded and asymmetry edges, the energy gap induced by the finite size effect is still opened with decreasing the width of the strip. It is also proposed that the edge band dispersion can be controlled by applying an on-site potential energy on the outermost atoms. (paper)

Nature of the fundamental band gap in GaNxP1-x alloys

International Nuclear Information System (INIS)

Shan, W.; Walukiewicz, W.; Yu, K. M.; Wu, J.; Ager, J. W. III; Haller, E. E.; Xin, H. P.; Tu, C. W.

2000-01-01

The optical properties of GaN x P 1-x alloys (0.007≤x≤0.031) grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears in GaN x P 1-x at energy below the indirect Γ V -X C transition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomodulation signals associated with the absorption edges in GaN x P 1-x indicate that a direct fundamental optical transition is taking place, revealing that the fundamental band gap has changed from indirect to direct. This N-induced transformation from indirect to direct band gap is explained in terms of an interaction between the highly localized nitrogen states and the extended states at the Γ conduction-band minimum. (c) 2000 American Institute of Physics

Grain size dependent optical band gap of CdI2 films

Indian Academy of Sciences (India)

Unknown

absorption data near band edge can be fitted to an indirect band gap of 3 eV. The dependence of band gap ... while to carry out the optical studies on CdI2 films in order to .... replotted as (αhν)1/2 vs hν to determine indirect gap as shown in the ...

Topological Edge-State Manifestation of Interacting 2D Condensed Boson-Lattice Systems in a Harmonic Trap

Science.gov (United States)

Galilo, Bogdan; Lee, Derek K. K.; Barnett, Ryan

2017-11-01

In this Letter, it is shown that interactions can facilitate the emergence of topological edge states of quantum-degenerate bosonic systems in the presence of a harmonic potential. This effect is demonstrated with the concrete model of a hexagonal lattice populated by spin-one bosons under a synthetic gauge field. In fermionic or noninteracting systems, the presence of a harmonic trap can obscure the observation of edge states. For our system with weakly interacting bosons in the Thomas-Fermi regime, we can clearly see a topological band structure with a band gap traversed by edge states. We also find that the number of edge states crossing the gap is increased in the presence of a harmonic trap, and the edge modes experience an energy shift while traversing the first Brillouin zone which is related to the topological properties of the system. We find an analytical expression for the edge-state energies and our comparison with numerical computation shows excellent agreement.

Topological Edge-State Manifestation of Interacting 2D Condensed Boson-Lattice Systems in a Harmonic Trap.

Science.gov (United States)

Galilo, Bogdan; Lee, Derek K K; Barnett, Ryan

2017-11-17

In this Letter, it is shown that interactions can facilitate the emergence of topological edge states of quantum-degenerate bosonic systems in the presence of a harmonic potential. This effect is demonstrated with the concrete model of a hexagonal lattice populated by spin-one bosons under a synthetic gauge field. In fermionic or noninteracting systems, the presence of a harmonic trap can obscure the observation of edge states. For our system with weakly interacting bosons in the Thomas-Fermi regime, we can clearly see a topological band structure with a band gap traversed by edge states. We also find that the number of edge states crossing the gap is increased in the presence of a harmonic trap, and the edge modes experience an energy shift while traversing the first Brillouin zone which is related to the topological properties of the system. We find an analytical expression for the edge-state energies and our comparison with numerical computation shows excellent agreement.

Temperature dependence of the soft-x-ray emission edges of simple metals

International Nuclear Information System (INIS)

Tagle, J.A.; Arakawa, E.T.; Callcott, T.A.

1980-01-01

The widths and energy positions of the M/sub 2,3/-emission edge of potassium, K-emission edge of beryllium, and L/sub 2,3/-emission edges of aluminum and magnesium have been measured for temperatures between 80 and 600 0 K. All band edges broaden (ΔGAMMA) and shift in energy (ΔE) with increasing temperatures for these materials. Similar results were reported earlier for the Li K-emission edge and Na L/sub 2,3/ edge. Lattice-relaxation processes and the phonon core-hole interaction are the dominant mechanisms affecting the core-level widths and the experimentally observed edge widths. The edge shifts are found to be proportional to the thermal expansion of the lattice, and are discussed in terms of the electron energy-level shifts which occur as the lattice dilates

Effects of Edge on-Site Potential in a Honeycomb Topological Magnon Insulator

Science.gov (United States)

Pantaleón, Pierre A.; Xian, Yang

2018-06-01

While the deviation of the edge on-site potential from the bulk values in a magnonic topological honeycomb lattice leads to the formation of edge states in a bearded boundary, this is not the case for a zigzag termination, where no edge state is found. In a semi-infinite lattice, the intrinsic on-site interactions along the boundary sites generate an effective defect and this gives rise to Tamm-like edge states. If a nontrivial gap is induced, both Tamm-like and topologically protected edge states appear in the band structure. The effective defect can be strengthened by an external on-site potential, and the dispersion relation, velocity and magnon density of the edge states all become tunable.

Picosecond thermometer in the amide I band of myoglobin

DEFF Research Database (Denmark)

Austin, R.H.; Xie, A.; Meer, L. van der

2005-01-01

The amide I and II bands in myoglobin show a heterogeneous temperature dependence, with bands at 6.17 and 6.43 mu m which are more intense at low temperatures. The amide I band temperature dependence is on the long wavelength edge of the band, while the short wavelength side has almost...... can be used to determine the time it takes vibrational energy to flow into the hydration shell. We determine that vibrational energy flow to the hydration shell from the amide I takes approximately 20 ps to occur....

Band structures in fractal grading porous phononic crystals

Science.gov (United States)

Wang, Kai; Liu, Ying; Liang, Tianshu; Wang, Bin

2018-05-01

In this paper, a new grading porous structure is introduced based on a Sierpinski triangle routine, and wave propagation in this fractal grading porous phononic crystal is investigated. The influences of fractal hierarchy and porosity on the band structures in fractal graidng porous phononic crystals are clarified. Vibration modes of unit cell at absolute band gap edges are given to manifest formation mechanism of absolute band gaps. The results show that absolute band gaps are easy to form in fractal structures comparatively to the normal ones with the same porosity. Structures with higher fractal hierarchies benefit multiple wider absolute band gaps. This work provides useful guidance in design of fractal porous phononic crystals.

Electronic properties and relative stabilities of heterogeneous edge-decorated zigzag boron nitride nanoribbons

International Nuclear Information System (INIS)

Li, L.L.; Yu, X.F.; Yang, X.J.; Zhang, X.H.; Xu, X.W.; Jin, P.; Zhao, J.L.; Wang, X.X.; Tang, C.C.

2015-01-01

The wide band gap of boron nitride (BN) materials has been a major bottleneck for a wider application of BN in electronics. In this work, density functional theory computations were used to study the band structure of zigzag BN nanoribbons (BNNRs). Due to the ionic origin of the BN band gap, a heterogeneous edge decoration is an effective way to modulate the electronic band structure of BNNRs. This study demonstrates that a metallic behavior and magnetism can be realized by applying a NO 2 –NH 2 pair edge decoration. Although the lone electron pair of the NH 2 group is partly responsible for the metallic behavior, the effective potential difference induced by the donor–acceptor pair is also crucial for metallic behavior. Furthermore, these newly formed BNNRs were found to be more stable than H-passivated BNNRs. This simple chemical modification method offers great opportunities for the development of future BNNR-based electronic devices. - Graphical abstract: Due to the ionic origin of a BN band gap, heterogeneous edge decoration is an effective way to modulate its electronic structures. Metallicity and magnetism can be realized by NO 2 –NH 2 pair decoration. Although the N lone pair electrons in NH 2 group are responsible for the metallicity, the effective potential difference induced by a donor–acceptor pair is crucial for the formation of metallicity. - Highlights: • Heterogeneous edge decoration is effective for tuning BNNRs' electronic structures. • NO 2 –NH 2 pair decoration can lead to metallic behavior and magnetism for BNNRs. • The effective potential difference is crucial for the formation of metallicity. • NO 2 –NH 2 pair decorated BNNRs is more stable than H-passivated ones

Thin-film intermediate band chalcopyrite solar cells

International Nuclear Information System (INIS)

Fuertes Marron, D.; Marti, A.; Luque, A.

2009-01-01

Chalcopyrite-based solar cells currently lead the efficiency tables of thin-film photovoltaic technologies. Further improvements are foreseen upon implementation of an intermediate band in the absorber layers. We present a theoretical analysis of the efficiency limit for this type of device as a function of factors such as the gap of the host, the relative position of the intermediate band with respect to the band edge and the level of light concentration used as illumination. We have also considered the impact of non-idealities on the performance of the device, particularly the effect of electronic losses related to non-radiative recombination

Single image super resolution algorithm based on edge interpolation in NSCT domain

Science.gov (United States)

Zhang, Mengqun; Zhang, Wei; He, Xinyu

2017-11-01

In order to preserve the texture and edge information and to improve the space resolution of single frame, a superresolution algorithm based on Contourlet (NSCT) is proposed. The original low resolution image is transformed by NSCT, and the directional sub-band coefficients of the transform domain are obtained. According to the scale factor, the high frequency sub-band coefficients are amplified by the interpolation method based on the edge direction to the desired resolution. For high frequency sub-band coefficients with noise and weak targets, Bayesian shrinkage is used to calculate the threshold value. The coefficients below the threshold are determined by the correlation among the sub-bands of the same scale to determine whether it is noise and de-noising. The anisotropic diffusion filter is used to effectively enhance the weak target in the low contrast region of the target and background. Finally, the high-frequency sub-band is amplified by the bilinear interpolation method to the desired resolution, and then combined with the high-frequency subband coefficients after de-noising and small target enhancement, the NSCT inverse transform is used to obtain the desired resolution image. In order to verify the effectiveness of the proposed algorithm, the proposed algorithm and several common image reconstruction methods are used to test the synthetic image, motion blurred image and hyperspectral image, the experimental results show that compared with the traditional single resolution algorithm, the proposed algorithm can obtain smooth edges and good texture features, and the reconstructed image structure is well preserved and the noise is suppressed to some extent.

Anomalous electromagnetically induced transparency in photonic-band-gap materials

International Nuclear Information System (INIS)

Singh, Mahi R.

2004-01-01

The phenomenon of electromagnetically induced transparency has been studied when a four-level atom is located in a photonic band gap material. Quantum interference is introduced by driving the two upper levels of the atom with a strong pump laser field. The top level and one of the ground levels are coupled by a weak probe laser field and absorption takes place between these two states. The susceptibility due to the absorption for this transition has been calculated by using the master equation method in linear response theory. Numerical simulations are performed for the real and imaginary parts of the susceptibility for a photonic band gap material whose gap-midgap ratio is 21%. It is found that when resonance frequencies lie within the band, the medium becomes transparent under the action of the strong pump laser field. More interesting results are found when one of the resonance frequencies lies at the band edge and within the band gap. When the resonance frequency lies at the band edge, the medium becomes nontransparent even under a strong pump laser field. On the other hand, when the resonance frequency lies within the band gap, the medium becomes transparent even under a weak pump laser field. In summary, we found that the medium can be transformed from the transparent state to the nontransparent state just by changing the location of the resonance frequency. We call these two effects anomalous electromagnetically induced transparency

Edge-Corrected Mean-Field Hubbard Model: Principle and Applications in 2D Materials

Directory of Open Access Journals (Sweden)

Xi Zhang

2017-05-01

Full Text Available This work reviews the current progress of tight-binding methods and the recent edge-modified mean-field Hubbard model. Undercoordinated atoms (atoms not fully coordinated exist at a high rate in nanomaterials with their impact overlooked. A quantum theory was proposed to calculate electronic structure of nanomaterials by incorporating bond order-length-strength (BOLS correlation to mean-field Hubbard model, i.e., BOLS-HM. Consistency between the BOLS-HM calculation and density functional theory (DFT calculation on 2D materials verified that (i bond contractions and potential well depression occur at the edge of graphene, phosphorene, and antimonene nanoribbons; (ii the physical origin of the band gap opening of graphene, phosphorene, and antimonene nanoribbons lays in the enhancement of edge potentials and hopping integrals due to the shorter and stronger bonds between undercoordinated atoms; (iii the band gap of 2D material nanoribbons expand as the width decreases due to the increasing under-coordination effects of edges which modulates the conductive behaviors; and (iv non-bond electrons at the edges and atomic vacancies of 2D material accompanied with the broken bond contribute to the Dirac-Fermi polaron (DFP with a local magnetic moment.

X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

Science.gov (United States)

Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A.; Martínez-Criado, G.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.

2009-07-01

By means of x-ray absorption near-edge structure (XANES) several Ga1-xMnxN (0.03edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding \\mathrm {t_{2}}\\uparrow band localized in the gap region, and the corresponding anti-bonding state \\mathrm {t_{2}}\\downarrow , which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

Band structure of comb-like photonic crystals containing meta-materials

Science.gov (United States)

Weng, Yi; Wang, Zhi-Guo; Chen, Hong

2007-09-01

We study the transmission properties and band structure of comb-like photonic crystals (PC) with backbones constructed of meta-materials (negative-index materials) within the frame of the interface response theory. The result shows the existence of a special band gap at low frequency. This gap differs from the Bragg gaps in that it is insensitive to the geometrical scaling and disorder. In comparison with the zero-average-index gap in one-dimensional PC made of alternating positive- and negative-index materials, the gap is obviously deeper and broader, given the same system parameters. In addition, the behavior of its gap-edges is also different. One gap-edge is decided by the average permittivity whereas the other is only subject to the changing of the permeability of the backbone. Due to this asymmetry of the two gap-edges, the broadening of the gap could be realized with much freedom and facility.

Ultra-low-noise transition edge sensors for the SAFARI L-band on SPICA

Science.gov (United States)

Goldie, D. J.; Gao, J. R.; Glowacka, D. M.; Griffin, D. K.; Hijmering, R.; Khosropanah, P.; Jackson, B. D.; Mauskopf, P. D.; Morozov, D.; Murphy, J. A.; Ridder, M.; Trappe, N.; O'Sullivan, C.; Withington, S.

2012-09-01

The Far-Infrared Fourier transform spectrometer instrument SAFARI-SPICA which will operate with cooled optics in a low-background space environment requires ultra-sensitive detector arrays with high optical coupling efficiencies over extremely wide bandwidths. In earlier papers we described the design, fabrication and performance of ultra-low-noise Transition Edge Sensors (TESs) operated close to 100mk having dark Noise Equivalent Powers (NEPs) of order 4 × 10-19W/√Hz close to the phonon noise limit and an improvement of two orders of magnitude over TESs for ground-based applications. Here we describe the design, fabrication and testing of 388-element arrays of MoAu TESs integrated with far-infrared absorbers and optical coupling structures in a geometry appropriate for the SAFARI L-band (110 - 210 μm). The measured performance shows intrinsic response time τ ~ 11ms and saturation powers of order 10 fW, and a dark noise equivalent powers of order 7 × 10-19W/√Hz. The 100 × 100μm2 MoAu TESs have transition temperatures of order 110mK and are coupled to 320×320μm2 thin-film β-phase Ta absorbers to provide impedance matching to the incoming fields. We describe results of dark tests (i.e without optical power) to determine intrinsic pixel characteristics and their uniformity, and measurements of the optical performance of representative pixels operated with flat back-shorts coupled to pyramidal horn arrays. The measured and modeled optical efficiency is dominated by the 95Ω sheet resistance of the Ta absorbers, indicating a clear route to achieve the required performance in these ultra-sensitive detectors.

Even–odd effect on the edge states for zigzag phosphorene nanoribbons under a perpendicular electric field

International Nuclear Information System (INIS)

Zhou, Benliang; Zhou, Guanghui; Zhou, Benhu; Zhou, Xiaoying

2017-01-01

We study the variation of electronic property for zigzag-edge phosphorene nanoribbons (ZPNRs) under a perpendicular electric field (PEF). Using the tight-binding Hamiltonian combined with the surface lattice Green’s function (GF) approach, we show that the response of edge states to PEF for a N -ZPNR with even- or odd- N (number of zigzag chains) is qualitatively different. The field opens a gap between two edge bands near the Fermi energy for even- N ribbons, but for odd- N ones where the two edge bands are always nearly degenerated. This difference is originally from that the Stark-effect-induced energies at the upper and lower edges for even- and odd- N ZPNRs are different due to the peculiar lattice structure of phosphorene. In consequence, the electronic densities are more localized at the edges driven by the field for even- N ZPNRs but not for odd- N ones. This even–odd effect is also reflected in conductance, which indicates that the odd- N ZPNRs may be more suitable for the usage of field-effect transistor. (paper)

Effects of adsorbed pyridine derivatives and ultrathin atomic-layer-deposited alumina coatings on the conduction band-edge energy of TiO2 and on redox-shuttle-derived dark currents.

Science.gov (United States)

Katz, Michael J; Vermeer, Michael J D; Farha, Omar K; Pellin, Michael J; Hupp, Joseph T

2013-01-15

Both the adsorption of t-butylpyridine and the atomic-layer deposition of ultrathin conformal coatings of insulators (such as alumina) are known to boost open-circuit photovoltages substantially for dye-sensitized solar cells. One attractive interpretation is that these modifiers significantly shift the conduction-edge energy of the electrode, thereby shifting the onset potential for dark current arising from the interception of injected electrons by solution-phase redox shuttle components such as Co(phenanthroline)(3)(3+) and triiodide. For standard, high-area, nanoporous photoelectrodes, band-edge energies are difficult to measure directly. In contrast, for flat electrodes they are readily accessible from Mott-Schottky analyses of impedance data. Using such electrodes (specifically TiO(2)), we find that neither organic nor inorganic electrode-surface modifiers shift the conduction-band-edge energy sufficiently to account fully for the beneficial effects on electrode behavior (i.e., the suppression of dark current). Additional experiments reveal that the efficacy of ultrathin coatings of Al(2)O(3) arises chiefly from the passivation of redox-catalytic surface states. In contrast, adsorbed t-butylpyridine appears to suppress dark currents mainly by physically blocking access of shuttle molecules to the electrode surface. Studies with other derivatives of pyridine, including sterically and/or electronically diverse derivatives, show that heterocycle adsorption and the concomitant suppression of dark current does not require the coordination of surface Ti(IV) or Al(III) atoms. Notably, the favorable (i.e., negative) shifts in onset potential for the flow of dark current engendered by organic and inorganic surface modifiers are additive. Furthermore, they appear to be largely insensitive to the identity of shuttle molecules.

The amniotic band syndrome: antenatal sonographic diagnosis and potential pitfalls.

Science.gov (United States)

Mahony, B S; Filly, R A; Callen, P W; Golbus, M S

1985-05-01

Amniotic band syndrome causes a variety of fetal malformations involving the limbs, craniofacial region, and trunk. Six prenatally diagnosed cases of amniotic band syndrome are discussed. The diagnosis was based on sonographic visualization of either amniotic sheets or bands associated with fetal deformation or deformities in nonembryologic distributions known to characterize the amniotic band syndrome. Seven additional cases are considered in which an aberrant sheet of tissue with a free edge was visualized within the amniotic cavity but no restriction of fetal motion or subsequent deformity was demonstrated.

High-Harmonic Generation in Solids with and without Topological Edge States

Science.gov (United States)

Bauer, Dieter; Hansen, Kenneth K.

2018-04-01

High-harmonic generation in the two topological phases of a finite, one-dimensional, periodic structure is investigated using a self-consistent time-dependent density functional theory approach. For harmonic photon energies smaller than the band gap, the harmonic yield is found to differ by up to 14 orders of magnitude for the two topological phases. This giant topological effect is explained by the degree of destructive interference in the harmonic emission of all valence-band (and edge-state) electrons, which strongly depends on whether or not topological edge states are present. The combination of strong-field laser physics with topological condensed matter opens up new possibilities to electronically control strong-field-based light or particle sources or—conversely—to steer by all optical means topological electronics.

Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculations

Science.gov (United States)

Gadret, E. G.; Dias, G. O.; Dacal, L. C. O.; de Lima, M. M., Jr.; Ruffo, C. V. R. S.; Iikawa, F.; Brasil, M. J. S. P.; Chiaramonte, T.; Cotta, M. A.; Tizei, L. H. G.; Ugarte, D.; Cantarero, A.

2010-09-01

We investigated experimentally and theoretically the valence-band structure of wurtzite InP nanowires. The wurtzite phase, which usually is not stable for III-V phosphide compounds, has been observed in InP nanowires. We present results on the electronic properties of these nanowires using the photoluminescence excitation technique. Spectra from an ensemble of nanowires show three clear absorption edges separated by 44 meV and 143 meV, respectively. The band edges are attributed to excitonic absorptions involving three distinct valence-bands labeled: A, B, and C. Theoretical results based on “ab initio” calculation gives corresponding valence-band energy separations of 50 meV and 200 meV, respectively, which are in good agreement with the experimental results.

Zigzag graphene nanoribbon edge reconstruction with Stone-Wales defects

DEFF Research Database (Denmark)

Rodrigues, J. N. B.; Gonçalves, P. A. D; Rodrigues, N. F. G.

2011-01-01

In this paper, we study zigzag graphene nanoribbons with edges reconstructed with Stone-Wales defects, by means of an empirical (first-neighbor) tight-binding method, with parameters determined by ab initio calculations of very narrow ribbons. We explore the characteristics of the electronic band...

Enhanced electroabsorption in strained-layer InxGa1-xAs-InP quantum wells via absorption edge merging

International Nuclear Information System (INIS)

Gomatam, B.N.; Anderson, N.G.

1990-01-01

Optoelectronic modulators are useful for optical communications, optical computing and other applications which require the electronic control of guided light. Considerable research has recently been devoted to multiple quantum well (MQW) modulators which use an electroabsorption effect unique to quantum wells: the quantum confined Stark effect (QCSE). Voltage controlled optical modulation can be achieved by Stark-shifting the absorption edge above and below the incident photon energy. This paper reports that, to obtain increased optical on-off ratios at decreased drive voltages, the authors are investigating a novel approach which exploits characteristics of MQWs under biaxial tension. The light hole band edge lies at a higher energy than the heavy hole band edge in these structures, which is opposite the case for unstrained or biaxially compressed structures. Since the absorption edge associated with the heavy holes decreases more rapidly with applied field than that for the light holes, merging of the two edges can be expected at some value of the applied field. This effect here called absorption edge merging (AEM), can be expected to give rise to a significant improvement in modulator design. We have theoretically investigated the AEM effect in In x Ga 1-x As/InP quantum well structures with x x Ga 1-x As quantum wells are under tension in such structures, hence the required light hole up band configuration can be achieved

Negative refractions by triangular lattice sonic crystals in partial band gaps

International Nuclear Information System (INIS)

Alagoz, S.; Sahin, A.; Alagoz, B. B.; Nur, S.

2015-01-01

This study numerically demonstrates the effects of partial band gaps on the negative refraction properties of sonic crystal. The partial band gap appearing at the second band edge leads to the efficient transmissions of scattered wave envelopes in the transverse directions inside triangular lattice sonic crystal, and therefore enhances the refraction property of sonic crystal. Numerical simulation results indicate a diagonal guidance of coupled scattered wave envelopes inside crystal structure at the partial band gap frequencies and then output waves are restored in the vicinity of the output interface of sonic crystal by combining phase coherent scattered waves according to Huygens’ principles. This mechanism leads to two operations for wavefront engineering: one is spatial wavefront shifting operation and the other is convex–concave wavefront inversion operation. The effects of this mechanism on the negative refraction and wave focalization are investigated by using the finite difference time domain (FDTD) simulations. This study contributes to a better understanding of negative refraction and wave focusing mechanisms at the band edge frequencies, and shows the applications of the slab corner beam splitting and SC-air multilayer acoustic system. (paper)

X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

Energy Technology Data Exchange (ETDEWEB)

Sancho-Juan, O; Cantarero, A; Garro, N; Cros, A [Materials Science Institute, University of Valencia, PO Box 22085, E46071 Valencia (Spain); Martinez-Criado, G; Salome, M; Susini, J [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, 38043 Grenoble (France); Olguin, D [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D F (Mexico); Dhar, S [Experimentalphysik, Universitaet Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg (Germany)

2009-07-22

By means of x-ray absorption near-edge structure (XANES) several Ga{sub 1-x}Mn{sub x}N (0.03edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding t{sub 2}arrow up band localized in the gap region, and the corresponding anti-bonding state t{sub 2}arrow down, which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

Research on the Band Gap Characteristics of Two-Dimensional Phononic Crystals Microcavity with Local Resonant Structure

Directory of Open Access Journals (Sweden)

Mao Liu

2015-01-01

Full Text Available A new two-dimensional locally resonant phononic crystal with microcavity structure is proposed. The acoustic wave band gap characteristics of this new structure are studied using finite element method. At the same time, the corresponding displacement eigenmodes of the band edges of the lowest band gap and the transmission spectrum are calculated. The results proved that phononic crystals with microcavity structure exhibited complete band gaps in low-frequency range. The eigenfrequency of the lower edge of the first gap is lower than no microcavity structure. However, for no microcavity structure type of quadrilateral phononic crystal plate, the second band gap disappeared and the frequency range of the first band gap is relatively narrow. The main reason for appearing low-frequency band gaps is that the proposed phononic crystal introduced the local resonant microcavity structure. This study provides a good support for engineering application such as low-frequency vibration attenuation and noise control.

Topological edge modes in multilayer graphene systems

KAUST Repository

Ge, Lixin

2015-08-10

Plasmons can be supported on graphene sheets as the Dirac electrons oscillate collectively. A tight-binding model for graphene plasmons is a good description as the field confinement in the normal direction is strong. With this model, the topological properties of plasmonic bands in multilayer graphene systems are investigated. The Zak phases of periodic graphene sheet arrays are obtained for different configurations. Analogous to Su-Schrieffer-Heeger (SSH) model in electronic systems, topological edge plasmon modes emerge when two periodic graphene sheet arrays with different Zak phases are connected. Interestingly, the dispersion of these topological edge modes is the same as that in the monolayer graphene and is invariant as the geometric parameters of the structure such as the separation and period change. These plasmonic edge states in multilayer graphene systems can be further tuned by electrical gating or chemical doping. © 2015 Optical Society of America.

Density Functional Theory Calculation of the Band Alignment of (101̅0) In(x)Ga(1-x)N/Water Interfaces.

Science.gov (United States)

Meng, Andrew C; Cheng, Jun; Sprik, Michiel

2016-03-03

Conduction band edge (CBE) and valence band edge (VBE) positions of InxGa1-xN photoelectrodes were computed using density functional theory methods. The band edges of fully solvated GaN and InN model systems were aligned with respect to the standard hydrogen electrode using a molecular dynamics hydrogen electrode scheme applied earlier to TiO2/water interfaces. Similar to the findings for TiO2, we found that the Purdew-Burke-Ernzerhof (PBE) functional gives a VBE potential which is too negative by 1 V. This cathodic bias is largely corrected by application of the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional containing a fraction of Hartree-Fock exchange. The effect of a change of composition was investigated using simplified model systems consisting of vacuum slabs covered on both sides by one monolayer of H2O. The CBE was found to vary linearly with In content. The VBE, in comparison, is much less sensitive to composition. The data show that the band edges straddle the hydrogen and oxygen evolution potentials for In fractions less than 47%. The band gap was found to exceed 2 eV for an In fraction less than 54%.

Nonlinear refraction at the absorption edge in InAs.

Science.gov (United States)

Poole, C D; Garmire, E

1984-08-01

The results of measurements of nonlinear refraction at the absorption edge in InAs between 68 and 90 K taken with an HF laser are compared with those of a band-gap resonant model in which the contribution of the light-hole band is included and found to account for more than 40% of the observed nonlinear refraction. A generalized expression for the nonlinear index is derived by using the complete Fermi-Dirac distribution function. Good agreement between theory and experiment is obtained, with no free parameters.

Adjustment of Conduction Band Edge of Compact TiO2 Layer in Perovskite Solar Cells Through TiCl4 Treatment.

Science.gov (United States)

Murakami, Takurou N; Miyadera, Tetsuhiko; Funaki, Takashi; Cojocaru, Ludmila; Kazaoui, Said; Chikamatsu, Masayuki; Segawa, Hiroshi

2017-10-25

Perovskite solar cells (PSCs) without a mesoporous TiO 2 layer, that is, planar-type PSCs exhibit poorer cell performance as compared to PSCs with a porous TiO 2 layer, owing to inefficient electron transfer from the perovskite layer to the compact TiO 2 layer in the former case. The matching of the conduction band levels of perovskite and the compact TiO 2 layer is thus essential for enhancing PSC performance. In this study, we demonstrate the shifting of the conduction band edge (CBE) of the compact TiO 2 layer through a TiCl 4 treatment, with the aim of improving PSC performance. The CBE of the compact TiO 2 layer was shifted to a higher level through the TiCl 4 treatment and then shifted in the opposite direction, that is, to a lower level, through a subsequent heat treatment. These shifts in the CBE were reflected in the PSC performance. The TiCl 4 -treated PSC showed an increase in the open-circuit voltage of more than 150 mV, as well as a decrease of 100 mV after being heated at 450 °C. On the other hand, the short-circuit current decreased after the treatment but increased after heating at temperatures higher than 300 °C. The treated PSC subjected to subsequent heating at 300 °C exhibited the best performance, with the power conversion efficiency of the PSC being 17% under optimized conditions.

Transition mechanism of Stone-Wales defect in armchair edge (5,5) carbon nanotube

Science.gov (United States)

Setiadi, Agung; Suprijadi

2015-04-01

We performed first principles calculations of Stone-Wales (SW) defects in armchair edge (5,5) carbon nanotube (CNT) by the density functional theory (DFT). Stone Wales (SW) defect is one kind of topological defect on the CNT. There are two kind of SW defect on the armchair edge (5,5) CNT, such as longitudinal and circumference SW defect. Barrier energy in the formation of SW defects is a good consideration to become one of parameter in controlling SW defects on the CNT. Our calculation results that a longitudinal SW defect is more stable than circumference SW defect. However, the barrier energy of circumference SW defect is lower than another one. We applied Climbing Image Nudge Elastic Band (CI-NEB) method to find minimum energy path (MEP) and barrier energy for SW defect transitions. We also found that in the case of circumference SW defect, armchair edge (5,5) CNT become semiconductor with the band gap of 0.0544 eV.

Calculation of Energy Band Diagram of a Photoelectrochemical Water Splitting Cell

OpenAIRE

Cendula, P.; Tilley, S. D.; Gimenez, S.; Schmid, M.; Bisquert, J.; Graetzel, M.; Schumacher, J. O.

2014-01-01

A physical model is presented for a semiconductor electrode of a photoelectrochemical (PEC) cell, accounting for the potential drop in the Helmholtz layer. Hence both band edge pinning and unpinning are naturally included in our description. The model is based on the continuity equations for charge carriers and direct charge transfer from the energy bands to the electrolyte. A quantitative calculation of the position of the energy bands and the variation of the quasi-Fermi levels in the semic...

Invariance of the mobility edge in anodic titanium oxides

International Nuclear Information System (INIS)

Tit, N.; Halley, J.W.; Shore, H.B.

1992-05-01

We present a theoretical investigation to explain the electronic and optical properties of anodic rutile TiO 2 thin films of different thicknesses (ranging from 5nm to 20nm). There is experimental evidence that the observed gap state at 0.7eV below the edge of conduction-band is due to an oxygen vacancy. For this reason, oxygen vacancies are used as defects in our model. A comparison of the calculated bulk-photoconductivity to photospectroscopy experiment reveals that the films have bulk-like transport properties with a bandgap E g =3.0eV. On the other hand, a fit of the surface density of states to the scanning tunneling microscopy (STM) experiment on the (001) surfaces has suggested a surface defect density of 5% of oxygen vacancies. To resolve this discrepancy, we calculated the dc-conductivity where localization effects are included. Our results show an impurity band formation at about p c =9% of oxygen vacancies. We concluded that the studied films have defect densities below the threshold of impurity band formation. As a consequence the gap states seen in STM are localized (i.e. the oxygen vacancies are playing the role of trapping centers, deep levels) and the mobility edge is invariant. (author). 11 refs, 3 figs

Band structure, band offsets, substitutional doping, and Schottky barriers of bulk and monolayer InSe

Science.gov (United States)

Guo, Yuzheng; Robertson, John

2017-09-01

We present a detailed study of the electronic structure of the layered semiconductor InSe. We calculate the band structure of the monolayer and bulk material using density functional theory, hybrid functionals, and G W . The band gap of the monolayer InSe is calculated to be 2.4 eV in screened exchange hybrid functional, close to the experimental photoluminescence gap. The electron affinities and band offsets are calculated for vertical stacked-layer heterostructures, and are found to be suitable for tunnel field effect transistors (TFETs) in combination with WS e2 or similar. The valence-band edge of InSe is calculated to lie 5.2 eV below the vacuum level, similar to that for the closed shell systems HfS e2 or SnS e2 . Hence InSe would be suitable to act as a p -type drain in the TFET. The intrinsic defects are calculated. For Se-rich layers, the Se adatom (interstitial) is found to be the most stable defect, whereas for In-rich layers, the Se vacancy is the most stable for the neutral state. Antisites tend to have energies just above those of vacancies. The Se antisite distorts towards a bond-breaking distortion as in the EL2 center of GaAs. Both substitutional donors and acceptors are calculated to be shallow, and effective dopants. They do not reconstruct to form nondoping configurations as occurs in black phosphorus. Finally, the Schottky barriers of metals on InSe are found to be strongly pinned by metal induced gap states (MIGS) at ˜0.5 eV above the valence-band edge. Any interfacial defects would lead to a stronger pinning at a similar energy. Overall, InSe is an effective semiconductor combining the good features of 2D (lack of dangling bonds, etc.) with the good features of 3D (effective doping), which few others achieve.

Imaging edges of nanostructured graphene

DEFF Research Database (Denmark)

Kling, Jens; Cagliani, Alberto; Booth, T. J.

Graphene, as the forefather of 2D-materials, attracts much attention due to its extraordinary properties like transparency, flexibility and outstanding high conductivity, together with a thickness of only one atom. However, graphene also possesses no band gap, which makes it unsuitable for many...... electronic applications like transistors. It has been shown theoretically that by nanostructuring pristine graphene, e.g. with regular holes, the electronic properties can be tuned and a band gap introduced. The size, distance and edge termination of these “defects” influence the adaptability....... Such nanostructuring can be done experimentally, but especially characterization at atomic level is a huge challenge. High-resolution TEM (HRTEM) is used to characterize the atomic structure of graphene. We optimized the imaging conditions used for the FEI Titan ETEM. To reduce the knock-on damage of the carbon atoms...

Closure of large wounds using rubber bands in rabbits

Directory of Open Access Journals (Sweden)

Maria Angélica Baron Magalhães

Full Text Available OBJECTIVE: to verify the effectiveness of the rubber elastic band in the treatment of large wounds of the body wall of rabbits by means of traction of its edges. METHODS: we studied 30 New Zealand rabbits, divided into three groups (n=10: Group 1- healing by secondary intention; Group 2- removal and eutopic repositioning of skin as full thickness skin graft; Group 3- Approximation of wound edges with elastic rubber band. In all animals, we removed a segment of the back skin and subcutaneous tissue down to the fascia, in accordance with an acrylic mold of 8cm long by 12cm wide. All animals were observed for 21 days. RESULTS: two animals of groups 1 and 2 had wound abscess. In Group 2, there was partial or total graft loss in 90% of animals. The complete closure of the wounds was observed in four animals of Group 1, six of Group 2 and eight of Group 3. There was no difference between the scar resistance values of groups 2 and 3, which were higher than those in Group 1. The scars of the three groups were characterized by the presence of mature connective tissue mixed with blood vessels and inflammatory infiltration, predominantly polymorphonuclear. CONCLUSION: the tensile strength of the wound edges with rubber elastic band is as efficient as the skin graft to treat rabbits' large body wounds.

Band-to-band tunneling distance analysis in the heterogate electron–hole bilayer tunnel field-effect transistor

Energy Technology Data Exchange (ETDEWEB)

Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch [Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne CH-1015 (Switzerland); Departamento de Electrónica y Tecnología de los Computadores, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain); Palomares, A. [Departamento de Matemática Aplicada, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain); Alper, C.; Ionescu, A. M. [Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne CH-1015 (Switzerland); Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain)

2016-01-28

In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron–hole bilayer tunnel field-effect transistor. We show that, analogously to the explicit formula for the tunneling distance that can be easily obtained in the semiclassical framework where the conduction and valence band edges are allowed states, an equivalent analytical expression can be derived in the presence of field-induced quantum confinement for describing the dependence of the tunneling distance on the body thickness and material properties of the channel. This explicit expression accounting for quantum confinement holds valid provided that the potential wells for electrons and holes at the top and bottom of the channel can be approximated by triangular profiles. Analytical predictions are compared to simulation results showing very accurate agreement.

Band-gap creation by icosahedral symmetry in nearly-free-electron materials

International Nuclear Information System (INIS)

Carlsson, A.E.

1993-01-01

A series of numerical electronic density-of-states calculations is performed for rational approximants to a model one-electron potential based on icosahedrally arranged plane-wave components. It is found that high-order approximants can have band gaps even if the low-order approximants do not; furthermore, the magnitude of the gap increases with the order of the approximant. The results are interpreted via a two- and three-wave analysis of the energy eigenvalues at the pseudo-Jones-zone faces and edges. It is also found that the mechanism of band-gap reduction in the rational approximants is the presence of a small density of gap states. An analytic calculation shows that these gap states result from a splitting of threefold and pseudothreefold states at the valence-band edge when the icosahedral symmetry is broken. The splitting is proportional to the error with which the ratio between the approximant indices approximates τ, the golden mean. Finally, an application to the AlCuLi system is presented

Magnetization and spin-polarized conductance of asymmetrically hydrogenated graphene nanoribbons: significance of sigma bands

International Nuclear Information System (INIS)

Honda, Syuta; Inuzuka, Kouhei; Inoshita, Takeshi; Ota, Norio; Sano, Nobuyuki

2014-01-01

The magnetization and spin transport of asymmetric zigzag-edge graphene nanoribbons, terminated by hydrogen on one edge while unterminated on the other edge, were investigated by a combination of first-principles calculations and a tight-binding approach. At the unterminated edge, a spin-polarized σ edge state of minority spin appears near the Fermi level and contributes to spin transport. This state enters the band gap for ribbon widths of less than 15 chains, dominating the spin-polarized current. This indicates the importance of the σ edge states in the design of spintronic devices using graphene nanoribbons. We also examined the case where the ‘unterminated’ edge is partially terminated by hydrogen. (paper)

Properties on the edge: graphene edge energies, edge stresses, edge warping, and the Wulff shape of graphene flakes

International Nuclear Information System (INIS)

Branicio, Paulo S; Jhon, Mark H; Gan, Chee Kwan; Srolovitz, David J

2011-01-01

It has been shown that the broken bonds of an unreconstructed graphene edge generate compressive edge stresses leading to edge warping. Here, we investigate edge energies and edge stresses of graphene nanoribbons with arbitrary orientations from armchair to zigzag, considering both flat and warped edge shapes in the presence and absence of hydrogen. We use the second generation reactive empirical bond order potential to calculate the edge energies and stresses for clean and hydrogenated edges. Using these energies, we perform a Wulff construction to determine the equilibrium shapes of flat graphene flakes as a function of hydrogen chemical potential. While edge stresses for clean, flat edges are compressive, they become tensile if allowed to warp. Conversely, we find that edge energies change little (∼1%) with edge warping. Hydrogenation of the edges virtually eliminates both the edge energy and edge stresses. For warped edges an approximately linear relationship is found between amplitudes and wavelengths. The equilibrium shape of a graphene flake is determined by the value of the hydrogen chemical potential. For very small (and large) values of it the flakes have a nearly hexagonal (dodecagon) shape with zigzag oriented edges, while for intermediate values graphene flakes are found with complex shapes

An Edge-Sensing Predictor in Wavelet Lifting Structures for Lossless Image Coding

Directory of Open Access Journals (Sweden)

Ömer N. Gerek

2007-02-01

Full Text Available The introduction of lifting implementations for image wavelet decomposition generated possibilities of several applications and several adaptive decomposition variations. The prediction step of a lifting stage constitutes the interesting part of the decomposition since it aims to reduce the energy of one of the decomposition bands by making predictions using the other decomposition band. In that aspect, more successful predictions yield better efficiency in terms of reduced energy in the lower band. In this work, we present a prediction filter whose prediction domain pixels are selected adaptively according to the local edge characteristics of the image. By judicuously selecting the prediction domain from pixels that are expected to have closer relation to the estimated pixel, the prediction error signal energy is reduced. In order to keep the adaptation rule symmetric for the encoder and the decoder sides, lossless compression applications are examined. Experimental results show that the proposed algorithm provides good compression results. Furthermore, the edge calculation is computationally inexpensive and comparable to the famous Daubechies 5/3 lifting implementation.

Role of edges in the electronic and magnetic structures of nanographene

International Nuclear Information System (INIS)

Enoki, Toshiaki

2012-01-01

In graphene edges or nanographene, the presence of edges strongly affects the electronic structure depending on their edge shape (zigzag and armchair edges) as observed with the electron wave interference and the creation of non-bonding π-electron state (edge state). We investigate the edge-inherent electronic features and the magnetic properties of edge-sate spins in nanographene/graphene edges. Graphene nanostructures are fabricated by heat-induced conversion/fabrication of nanodiamond particles/graphite step edges; single-layer nanographene islands (mean size 10 nm) and armchair-edged nanographene ribbons (width 8 nm). Scanning tunneling microscopy (STM)/scanning tunneling spectroscopy observations demonstrate that edge states are created in zigzag edges in spite of the absence of such states in armchair edges. In addition, zigzag edges tend to be short and defective, whereas armchair edges are long and continuous in general. These findings suggest that a zigzag edge has lower aromatic stability than an armchair edge, consistent with Clar's aromatic sextet rule. The manner in which electron wave scattering takes place is different between zigzag and armchair edges. In the vicinity of an armchair edge, a honeycomb superlattice is observed in STM images together with a fine structure of threefold symmetry, in spite of the (√3×√3 )R30 o superlattice at a zigzag edge. The honeycomb lattice is a consequence of the intervalley K-K' transition that accompanies the electron wave interference taking place at the armchair edge. The Raman G-band is also affected by the interference, showing polarization angle dependence specifically at armchair edges. The magnetism of a three-dimensional disordered network of nanographene sheets is understood on the basis of the ferrimagnetic structure of the edge-state spins in individual constituent nanographene sheets. The strengthening of the inter-nanographene-sheet magnetic interaction brings about a spin glass state.

Slip-band formation and dislocation kinetics in the stage I deformation of neutron-irradiated copper single crystals

International Nuclear Information System (INIS)

Kitajima, Sadakichi; Shinohara, Kazutoshi; Kutsuwada, Masanori

1995-01-01

The velocity of edge and screw dislocations moving in primary slip bands and the formation rate of primary slip bands were measured in stage I deformation of neutron-irradiated copper single crystals at different strain rates at room temperature using micro-cinematography and optical micrography. The average velocity of edge dislocations was larger at least by one order than that of screw ones, and that of screw dislocations did not depend so strongly on strain rate. The formation rate of primary slip bands was proportional to strain rate. From these results, it is concluded that (1) jogs produced on moving dislocations by cutting dislocation loops result in the difference in velocity between edge and screw dislocations and (2) the change in the density of mobile dislocations as well as velocity of dislocations is responsible for the change of plastic strain rate of a crystal. (author)

Band-to-band and inner shell excitation VIS-UV photoluminescence of quaternary InAlGaN alloys

International Nuclear Information System (INIS)

Fukui, K.; Naoe, S.; Okada, K.; Hamada, S.; Hirayama, H.

2006-01-01

Visible and ultraviolet photoluminescence and photoluminescence excitation spectra of quaternary InAlGaN alloys were measured. The excitation photon energy covers from band edge to 180 eV, near both nitrogen K (∝400 eV) and aluminium K (∝1.5 keV) inner shell energy region. From photoluminescence excitation spectra photoluminescence intensity per incident photon number varies in proportion to incident photon energy. This result implies that many conduction band electron - valence band hole pairs which are responsible for photoluminescence are produced by high energy excitation. Time resolved decay curves were also measured in the same energy region. No effect of high energy excitation on time resolved decay measurements suggests a role of indium on the photoluminescence mechanism in InAlGaN system. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Blue shift of the plasma edge of a ferromagnetic semimetal

International Nuclear Information System (INIS)

Wachter, P.; Bommeli, F.; Degiorgi, L.; Burlet, P.; Bourdarot, F.

1998-01-01

Full text: In general rare earth pnictides are semimetals and antiferromagnets. Only some nitrides are quoted as ferri or ferromagnetic. However, it has been shown when prepared stoichiometrically and in single crystalline form the free carrier concentration is only in the percent per cation range, thus they are typical low carrier systems. Under these conditions the nitrides are all canted antiferromagnets and metamagnets, i.e. they show Abstract only. The full magnetic moment only with an applied magnetic field. However, when prepared as single crystals but with excess of the rare earths they become spontaneously ferromagnets due to the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in addition to the superexchange mechanisms. On such ferromagnetic compositions of TbN and GdN and also in EuB 6 a new magneto-optic effect has been discovered, a spontaneous blue shift of the plasma edge upon magnetic order. The plasma edge is measured with optical reflectivity and it depends on the free carrier concentration. In other words the free carrier concentration increases upon ferromagnetic order. This effect can be understood with the spontaneous exchange splitting of mainly the 5d conduction band, lowering the bottom of the spin up 5d band, thus increasing the indirect overlap with the valence p band of the anions and thus enhancing the carrier concentration. This blue shift of the plasma edge follows a spin correlation function. An external magnetic field applied near TC enhances the blue shift since the magnetization is not yet saturated. For T→0 a magnetic field has no effect since the magnetization is spontaneously saturated

The effect of spin-orbit coupling in band structure of few-layer graphene

Energy Technology Data Exchange (ETDEWEB)

Sahdan, Muhammad Fauzi, E-mail: sahdan89@yahoo.co.id; Darma, Yudi, E-mail: sahdan89@yahoo.co.id [Department of Physics, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132 (Indonesia)

2014-03-24

Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface. This can be happened due to spin-orbit coupling and time-reversal symmetry. Moreover, the edge current flows through their edge or surface depends on its spin orientation and also it is robust against non-magnetic impurities. Therefore, topological insulators are predicted to be useful ranging from spintronics to quantum computation. Graphene was first predicted to be the precursor of topological insulator by Kane-Mele. They developed a Hamiltonian model to describe the gap opening in graphene. In this work, we investigate the band structure of few-layer graphene by using this model with analytical approach. The results of our calculations show that the gap opening occurs at K and K’ point, not only in single layer, but also in bilayer and trilayer graphene.

Mapping Catalytically Relevant Edge Electronic States of MoS2

Science.gov (United States)

2018-01-01

Molybdenum disulfide (MoS2) is a semiconducting transition metal dichalcogenide that is known to be a catalyst for both the hydrogen evolution reaction (HER) as well as for hydro-desulfurization (HDS) of sulfur-rich hydrocarbon fuels. Specifically, the edges of MoS2 nanostructures are known to be far more catalytically active as compared to unmodified basal planes. However, in the absence of the precise details of the geometric and electronic structure of the active catalytic sites, a rational means of modulating edge reactivity remain to be developed. Here we demonstrate using first-principles calculations, X-ray absorption spectroscopy, as well as scanning transmission X-ray microscopy (STXM) imaging that edge corrugations yield distinctive spectroscopic signatures corresponding to increased localization of hybrid Mo 4d states. Independent spectroscopic signatures of such edge states are identified at both the S L2,3 and S K-edges with distinctive spatial localization of such states observed in S L2,3-edge STXM imaging. The presence of such low-energy hybrid states at the edge of the conduction band is seen to correlate with substantially enhanced electrocatalytic activity in terms of a lower Tafel slope and higher exchange current density. These results elucidate the nature of the edge electronic structure and provide a clear framework for its rational manipulation to enhance catalytic activity. PMID:29721532

Design lithium storage materials by lithium adatoms adsorption at the edges of zigzag silicene nanoribbon: A first principle study

Energy Technology Data Exchange (ETDEWEB)

Guo, Gang [Hunan Key Laboratory for Micro–Nano Energy Materials and Devices, School of Physics and Optoelectronic Engineering, Xiangtan University, Hunan, 411105 (China); Mao, Yuliang, E-mail: ylmao@xtu.edu.cn [Hunan Key Laboratory for Micro–Nano Energy Materials and Devices, School of Physics and Optoelectronic Engineering, Xiangtan University, Hunan, 411105 (China); Zhong, Jianxin [Hunan Key Laboratory for Micro–Nano Energy Materials and Devices, School of Physics and Optoelectronic Engineering, Xiangtan University, Hunan, 411105 (China); Yuan, Jianmei [Hunan Key Laboratory for Computation and Simulation in Science and Engineering, School of Mathematics and Computational Science, Xiangtan University, Hunan, 411105 (China); Zhao, Hongquan, E-mail: hqzhao@cigit.ac.cn [Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 401120 (China)

2017-06-01

Highlights: • Edge-adsorption of Li adatoms on zigzag silicene nanoribbon is preferred in energy to form new type lithium storage materials. • Significant charge transfer from Li adatoms to Si atoms is found, indicating the main ionic interactions. • The band structures of zigzag silicene nanoribbon are sensitive with the variation of sites of Li adatoms at the two edges. • The local magnetic moments at the two edges of zigzag silicene nanoribbon are suppressed by the adsorptions of Li adatoms. - Abstract: First-principles spin-polarized calculations are performed to design lithium storage materials using the active edges of zigzag silicene nanoribbon (ZSiNR). We predict that edge-adsorption of Li adatoms on zigzag silicene nanoribbon is preferred in energy to form new type lithium storage materials. Significant charge transfer from Li adatoms to Si atoms at the edges of ZSiNR is found, indicating the main ionic interactions. It is found that the band structures of ZSiNR with Li adsorptions are sensitive with the variation of sites of adatoms at the two edges. Ferro-magnetic to antiferro-magnetic change is found in ZSiNR with symmetrical adsorption of Li adatoms at its two edges. Other unsymmetrical Li adsorptions at the edges of ZSiNR prefer to stay in ferro-magnetic state as that in narrow pristine ZSiNR.

Design lithium storage materials by lithium adatoms adsorption at the edges of zigzag silicene nanoribbon: A first principle study

International Nuclear Information System (INIS)

Guo, Gang; Mao, Yuliang; Zhong, Jianxin; Yuan, Jianmei; Zhao, Hongquan

2017-01-01

Highlights: • Edge-adsorption of Li adatoms on zigzag silicene nanoribbon is preferred in energy to form new type lithium storage materials. • Significant charge transfer from Li adatoms to Si atoms is found, indicating the main ionic interactions. • The band structures of zigzag silicene nanoribbon are sensitive with the variation of sites of Li adatoms at the two edges. • The local magnetic moments at the two edges of zigzag silicene nanoribbon are suppressed by the adsorptions of Li adatoms. - Abstract: First-principles spin-polarized calculations are performed to design lithium storage materials using the active edges of zigzag silicene nanoribbon (ZSiNR). We predict that edge-adsorption of Li adatoms on zigzag silicene nanoribbon is preferred in energy to form new type lithium storage materials. Significant charge transfer from Li adatoms to Si atoms at the edges of ZSiNR is found, indicating the main ionic interactions. It is found that the band structures of ZSiNR with Li adsorptions are sensitive with the variation of sites of adatoms at the two edges. Ferro-magnetic to antiferro-magnetic change is found in ZSiNR with symmetrical adsorption of Li adatoms at its two edges. Other unsymmetrical Li adsorptions at the edges of ZSiNR prefer to stay in ferro-magnetic state as that in narrow pristine ZSiNR.

Band alignment of two-dimensional metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te

Directory of Open Access Journals (Sweden)

Huazheng Sun

2017-09-01

Full Text Available Monolayer metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te form a new class of two-dimensional semiconductors with indirect band gaps, and their band alignment information is investigated via first principles calculations. The dependence of band gap, valence-band maximum, conduction band minimum, and charge transfer on the M or X element has been obtained and can be understood from the orbital analysis of the band edges. Potential applications of metal monochalcogenides to design van der Waals heterostructures and catalyse the photo-splitting reaction of water have been discussed.

Band alignment of type I at (100ZnTe/PbSe interface

Directory of Open Access Journals (Sweden)

Igor Konovalov

2016-06-01

Full Text Available A junction of lattice-matched cubic semiconductors ZnTe and PbSe results in a band alignment of type I so that the narrow band gap of PbSe is completely within the wider band gap of ZnTe. The valence band offset of 0.27 eV was found, representing a minor barrier during injection of holes from PbSe into ZnTe. Simple linear extrapolation of the valence band edge results in a smaller calculated band offset, but a more elaborate square root approximation was used instead, which accounts for parabolic bands. PbSe was electrodeposited at room temperature with and without Cd2+ ions in the electrolyte. Although Cd adsorbs at the surface, the presence of Cd in the electrolyte does not influence the band offset.

Observation of valleylike edge states of sound at a momentum away from the high-symmetry points

Science.gov (United States)

Xia, Bai-Zhan; Zheng, Sheng-Jie; Liu, Ting-Ting; Jiao, Jun-Rui; Chen, Ning; Dai, Hong-Qing; Yu, De-Jie; Liu, Jian

2018-04-01

In condensed matter physics, topologically protected edge transportation has drawn extensive attention over recent years. Thus far, the topological valley edge states have been produced near the Dirac cones fixed at the high-symmetry points of the Brillouin zone. In this paper, we demonstrate a unique valleylike phononic crystal (PnC) with the position-varying Dirac cones at the high-symmetry lines of the Brillouin zone boundary. The emergence of such Dirac cones, characterized by the vortex structure in a momentum space, is attributed to the unavoidable band crossing protected by the mirror symmetry. The Dirac cones can be unbuckled and a complete band gap can be induced through breaking the mirror symmetry. Interestingly, by simply rotating the square columns, we realize the valleylike vortex states and the band inversion effect which leads to the valley Hall phase transition. Along the valleylike PnC interfaces separating two distinct acoustic valley Hall phases, the valleylike protected edge transport of sound in domain walls is observed in both the simulations and the experiments. These results are promising for the exploration of alternative topological phenomena in the valleylike PnCs beyond the graphenelike lattice.

Band-gap measurements of bulk and nanoscale hematite by soft x-ray spectroscopy

DEFF Research Database (Denmark)

Gilbert, B.; Frandsen, Cathrine; Maxey, E.R.

2009-01-01

Chemical and photochemical processes at semiconductor surfaces are highly influenced by the size of the band gap, and ability to control the band gap by particle size in nanomaterials is part of their promise. The combination of soft x-ray absorption and emission spectroscopies provides band......-gap determination in bulk and nanoscale itinerant electron semiconductors such as CdS and ZnO, but this approach has not been established for materials such as iron oxides that possess band-edge electronic structure dominated by electron correlations. We performed soft x-ray spectroscopy at the oxygen K...

Enhancement of the core near-band-edge emission induced by an amorphous shell in coaxial one-dimensional nanostructure: the case of SiC/SiO{sub 2} core/shell self-organized nanowires

Energy Technology Data Exchange (ETDEWEB)

Fabbri, Filippo; Rossi, Francesca; Attolini, Giovanni; Salviati, Giancarlo; Iannotta, Salvatore [IMEM-CNR Institute, Viale Usberti 37/A, I-43124 Parma (Italy); Aversa, Lucrezia; Verucchi, Roberto; Nardi, Marco [IFN-CNR Institute, Via alla Cascata 56/C-Povo, I-38123 Trento (Italy); Fukata, Naoki [International Center for Materials Nanoarchitectonics, National Institute for Materials Science and PRESTO JST, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Dierre, Benjamin; Sekiguchi, Takashi [Nano Device Characterization Group, Advanced Electronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2010-08-27

We report the influence of the native amorphous SiO{sub 2} shell on the cathodoluminescence emission of 3C-SiC/SiO{sub 2} core/shell nanowires. A shell-induced enhancement of the SiC near-band-edge emission is observed and studied as a function of the silicon dioxide thickness. Since the diameter of the investigated SiC cores rules out any direct bandgap optical transitions due to confinement effects, this enhancement is ascribed to a carrier diffusion from the shell to the core, promoted by the alignment of the SiO{sub 2} and SiC bands in a type I quantum well. An accurate correlation between the optical emission and structural and SiO{sub 2}-SiC interface properties is also reported.

Topological Magnon Bands in a Kagome Lattice Ferromagnet.

Science.gov (United States)

Chisnell, R; Helton, J S; Freedman, D E; Singh, D K; Bewley, R I; Nocera, D G; Lee, Y S

2015-10-02

There is great interest in finding materials possessing quasiparticles with topological properties. Such materials may have novel excitations that exist on their boundaries which are protected against disorder. We report experimental evidence that magnons in an insulating kagome ferromagnet can have a topological band structure. Our neutron scattering measurements further reveal that one of the bands is flat due to the unique geometry of the kagome lattice. Spin wave calculations show that the measured band structure follows from a simple Heisenberg Hamiltonian with a Dzyaloshinkii-Moriya interaction. This serves as the first realization of an effectively two-dimensional topological magnon insulator--a new class of magnetic material that should display both a magnon Hall effect and protected chiral edge modes.

Band gap effects of hexagonal boron nitride using oxygen plasma

International Nuclear Information System (INIS)

Sevak Singh, Ram; Leong Chow, Wai; Yingjie Tay, Roland; Hon Tsang, Siu; Mallick, Govind; Tong Teo, Edwin Hang

2014-01-01

Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing

Band gap effects of hexagonal boron nitride using oxygen plasma

Energy Technology Data Exchange (ETDEWEB)

Sevak Singh, Ram; Leong Chow, Wai [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Yingjie Tay, Roland [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Hon Tsang, Siu [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Mallick, Govind [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Weapons and Materials Research Directorate, U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States); Tong Teo, Edwin Hang, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2014-04-21

Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.

Determination of band structure parameters and the quasi-particle gap of CdSe quantum dots by cyclic voltammetry.

Science.gov (United States)

Inamdar, Shaukatali N; Ingole, Pravin P; Haram, Santosh K

2008-12-01

Band structure parameters such as the conduction band edge, the valence band edge and the quasi-particle gap of diffusing CdSe quantum dots (Q-dots) of various sizes were determined using cyclic voltammetry. These parameters are strongly dependent on the size of the Q-dots. The results obtained from voltammetric measurements are compared to spectroscopic and theoretical data. The fit obtained to the reported calculations based on the semi-empirical pseudopotential method (SEPM)-especially in the strong size-confinement region, is the best reported so far, according to our knowledge. For the smallest CdSe Q-dots, the difference between the quasi-particle gap and the optical band gap gives the electron-hole Coulombic interaction energy (J(e1,h1)). Interband states seen in the photoluminescence spectra were verified with cyclic voltammetry measurements.

Bulk band gaps in divalent hexaborides: A soft x-ray emission study

International Nuclear Information System (INIS)

Denlinger, Jonathan D.; Gweon, Gey-Hong; Allen, James W.; Bianchi, Andrea D.; Fisk, Zachary

2001-01-01

Boron K-edge soft x-ray emission and absorption are used to address the fundamental question of whether divalent hexaborides are intrinsic semimetals or defect-doped bandgap insulators. These bulk sensitive measurements, complementary and consistent with surface-sensitive angle-resolved photoemission experiments, confirm the existence of a bulk band gap and the location of the chemical potential at the bottom of the conduction band

Robust and adaptive band-to-band image transform of UAS miniature multi-lens multispectral camera

Science.gov (United States)

Jhan, Jyun-Ping; Rau, Jiann-Yeou; Haala, Norbert

2018-03-01

Utilizing miniature multispectral (MS) or hyperspectral (HS) cameras by mounting them on an Unmanned Aerial System (UAS) has the benefits of convenience and flexibility to collect remote sensing imagery for precision agriculture, vegetation monitoring, and environment investigation applications. Most miniature MS cameras adopt a multi-lens structure to record discrete MS bands of visible and invisible information. The differences in lens distortion, mounting positions, and viewing angles among lenses mean that the acquired original MS images have significant band misregistration errors. We have developed a Robust and Adaptive Band-to-Band Image Transform (RABBIT) method for dealing with the band co-registration of various types of miniature multi-lens multispectral cameras (Mini-MSCs) to obtain band co-registered MS imagery for remote sensing applications. The RABBIT utilizes modified projective transformation (MPT) to transfer the multiple image geometry of a multi-lens imaging system to one sensor geometry, and combines this with a robust and adaptive correction (RAC) procedure to correct several systematic errors and to obtain sub-pixel accuracy. This study applies three state-of-the-art Mini-MSCs to evaluate the RABBIT method's performance, specifically the Tetracam Miniature Multiple Camera Array (MiniMCA), Micasense RedEdge, and Parrot Sequoia. Six MS datasets acquired at different target distances and dates, and locations are also applied to prove its reliability and applicability. Results prove that RABBIT is feasible for different types of Mini-MSCs with accurate, robust, and rapid image processing efficiency.

[Road Extraction in Remote Sensing Images Based on Spectral and Edge Analysis].

Science.gov (United States)

Zhao, Wen-zhi; Luo, Li-qun; Guo, Zhou; Yue, Jun; Yu, Xue-ying; Liu, Hui; Wei, Jing

2015-10-01

Roads are typically man-made objects in urban areas. Road extraction from high-resolution images has important applications for urban planning and transportation development. However, due to the confusion of spectral characteristic, it is difficult to distinguish roads from other objects by merely using traditional classification methods that mainly depend on spectral information. Edge is an important feature for the identification of linear objects (e. g. , roads). The distribution patterns of edges vary greatly among different objects. It is crucial to merge edge statistical information into spectral ones. In this study, a new method that combines spectral information and edge statistical features has been proposed. First, edge detection is conducted by using self-adaptive mean-shift algorithm on the panchromatic band, which can greatly reduce pseudo-edges and noise effects. Then, edge statistical features are obtained from the edge statistical model, which measures the length and angle distribution of edges. Finally, by integrating the spectral and edge statistical features, SVM algorithm is used to classify the image and roads are ultimately extracted. A series of experiments are conducted and the results show that the overall accuracy of proposed method is 93% comparing with only 78% overall accuracy of the traditional. The results demonstrate that the proposed method is efficient and valuable for road extraction, especially on high-resolution images.

Detection of metal stress in boreal forest species using the 0.67-micron chlorophyll absorption band

Science.gov (United States)

Singhroy, Vernon H.; Kruse, Fred A.

1991-01-01

Several recent studies have shown that a shift of the red-edge inflection near 0.70 micron in vegetation reflectance spectra is an indicator of metal stress, partially attributable to changes in chlorophyll concentration. This 'red-edge shift', however, is difficult to detect and has been reported both toward longer (red) and shorter (blue) wavelengths. Our work demonstrates that direct measurement of the depth and width of the chlorophyll absorption band at 0.67 micron using digital feature extraction and absorption band characterization procedures developed for the analysis of mineral spectra is a more consistent indicator of metal stress. Additionally, the magnitude of these parameters is generally greater than that of the red edge shift and thus should be more amenable to detection and mapping using field and aircraft spectrometers.

Flattening and truncation of stellar discs in edge-on spiral galaxies

NARCIS (Netherlands)

Kregel, M; van der Kruit, PC; de Grijs, R

We analyse the global structure of the old stellar discs in 34 edge-on spiral galaxies. The radial and vertical exponential scale parameters of the discs are obtained by applying an improved two-dimensional decomposition technique to our I -band photometry. We find a clear increase in the disc

Quantization of band tilting in modulated phononic crystals

Science.gov (United States)

Nassar, H.; Chen, H.; Norris, A. N.; Huang, G. L.

2018-01-01

A general theory of the tilting of dispersion bands in phononic crystals whose properties are being slowly and periodically modulated in space and time is established. The ratio of tilt to modulation speed is calculated, for the first time, in terms of Berry's phase and curvature and is proven to be a robust integer-valued Chern number. Derivations are based on a version of the adiabatic theorem for elastic waves demonstrated thanks to WKB asymptotics. Findings are exemplified in the case of a 3-periodic discrete spring-mass lattice. Tilted dispersion diagrams plotted using fully numerical simulations and semianalytical calculations based on a numerically gauge invariant expression of Berry's phase show perfect agreement. One-way blocking of waves due to the tilt, and ultimately to the breaking of reciprocity, is illustrated numerically and shown to be highly significant across a limited number of unit cells, suggesting the feasibility of experimental demonstrations. Finally, a version of the bulk-edge correspondence principle relating the tilt of bulk bands to the number of one-way gapless edge states is demonstrated.

Symmetrical metallic and magnetic edge states of nanoribbon from semiconductive monolayer PtS2

Science.gov (United States)

Liu, Shan; Zhu, Heyu; Liu, Ziran; Zhou, Guanghui

2018-03-01

Transition metal dichalcogenides (TMD) MoS2 or graphene could be designed to metallic nanoribbons, which always have only one edge show metallic properties due to symmetric protection. In present work, a nanoribbon with two parallel metallic and magnetic edges was designed from a noble TMD PtS2 by employing first-principles calculations based on density functional theory (DFT). Edge energy, bonding charge density, band structure, density of states (DOS) and simulated scanning tunneling microscopy (STM) of four possible edge states of monolayer semiconductive PtS2 were systematically studied. Detailed calculations show that only Pt-terminated edge state among four edge states was relatively stable, metallic and magnetic. Those metallic and magnetic properties mainly contributed from 5d orbits of Pt atoms located at edges. What's more, two of those central symmetric edges coexist in one zigzag nanoribbon, which providing two atomic metallic wires thus may have promising application for the realization of quantum effects, such as Aharanov-Bohm effect and atomic power transmission lines in single nanoribbon.

Electronic band structure of magnetic bilayer graphene superlattices

International Nuclear Information System (INIS)

Pham, C. Huy; Nguyen, T. Thuong; Nguyen, V. Lien

2014-01-01

Electronic band structure of the bilayer graphene superlattices with δ-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy touching point between the lowest conduction and the highest valence minibands of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate the finite-energy touching points between higher minibands at the edges of Brillouin zone. The positions of these points and the related dispersions are determined in the case of symmetric potentials.

Band structure of Si/Ge core-shell nanowires along the [110] direction modulated by external uniaxial strain

International Nuclear Information System (INIS)

Peng Xihong; Tang Fu; Logan, Paul

2011-01-01

Strain modulated electronic properties of Si/Ge core-shell nanowires along the [110] direction were reported, on the basis of first principles density-functional theory calculations. In particular, the energy dispersion relationship of the conduction/valence band was explored in detail. At the Γ point, the energy levels of both bands are significantly altered by applied uniaxial strain, which results in an evident change of the band gap. In contrast, for the K vectors far away from Γ, the variation of the conduction/valence band with strain is much reduced. In addition, with a sufficient tensile strain (∼1%), the valence band edge shifts away from Γ, which indicates that the band gap of the Si/Ge core-shell nanowires experiences a transition from direct to indirect. Our studies further showed that effective masses of charge carriers can also be tuned using the external uniaxial strain. The effective mass of the hole increases dramatically with tensile strain, while strain shows a minimal effect on tuning the effective mass of the electron. Finally, the relation between strain and the conduction/valence band edge is discussed thoroughly in terms of site-projected wavefunction characters.

MEDICAL IMAGE COMPRESSION USING HYBRID CODER WITH FUZZY EDGE DETECTION

Directory of Open Access Journals (Sweden)

K. Vidhya

2011-02-01

Full Text Available Medical imaging techniques produce prohibitive amounts of digitized clinical data. Compression of medical images is a must due to large memory space required for transmission and storage. This paper presents an effective algorithm to compress and to reconstruct medical images. The proposed algorithm first extracts edge information of medical images by using fuzzy edge detector. The images are decomposed using Cohen-Daubechies-Feauveau (CDF wavelet. The hybrid technique utilizes the efficient wavelet based compression algorithms such as JPEG2000 and Set Partitioning In Hierarchical Trees (SPIHT. The wavelet coefficients in the approximation sub band are encoded using tier 1 part of JPEG2000. The wavelet coefficients in the detailed sub bands are encoded using SPIHT. Consistent quality images are produced by this method at a lower bit rate compared to other standard compression algorithms. Two main approaches to assess image quality are objective testing and subjective testing. The image quality is evaluated by objective quality measures. Objective measures correlate well with the perceived image quality for the proposed compression algorithm.

Understanding the shrinkage of optical absorption edges of nanostructured Cd-Zn sulphide films for photothermal applications

Energy Technology Data Exchange (ETDEWEB)

Hossain, Md. Sohrab [Department of Physics, Jahangirnagar University, Savar, Dhaka 1342 (Bangladesh); Kabir, Humayun [Department of Physics, Jahangirnagar University, Savar, Dhaka 1342 (Bangladesh); School of Metallurgy and Materials, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom); Rahman, M. Mahbubur, E-mail: M.Rahman@Murdoch.edu.au [Department of Physics, Jahangirnagar University, Savar, Dhaka 1342 (Bangladesh); Surface Analysis and Materials Engineering Research Group, School of Engineering & Information Technology, Murdoch University, Perth, Western Australia 6150 (Australia); Hasan, Kamrul [Department of Chemistry, College of Sciences, University of Sharjah, P.O. Box 27272, Sharjah (United Arab Emirates); Bashar, Muhammad Shahriar; Rahman, Mashudur [Institute of Fuel and Research Development, Bangladesh Council for Scientific and Industrial Research, Dhanmondi, Dhaka (Bangladesh); Gafur, Md. Abdul [Pilot Plant and Process Development Center, Bangladesh Council for Scientific and Industrial Research, Dhanmondi, Dhaka (Bangladesh); Islam, Shariful [Department of Physics, Comilla University, Comilla (Bangladesh); Amri, Amun [Department of Chemical Engineering, Universitas Riau, Pekanbaru (Indonesia); Jiang, Zhong-Tao [Surface Analysis and Materials Engineering Research Group, School of Engineering & Information Technology, Murdoch University, Perth, Western Australia 6150 (Australia); Altarawneh, Mohammednoor; Dlugogorski, Bogdan Z. [School of Engineering & Information Technology, Murdoch University, Murdoch, WA 6150 (Australia)

2017-01-15

Highlights: • Cd-Zn sulphide films synthesized via chemical bath deposition technique. • Nanocrystalline phase of Cd-Zn sulphide films were seen in XRD studies. • Nanocrystalline structures of the films were also confirmed by the SEM. • The band gap of these films is a combination of composition and size. • E{sub U} and σ studies ascribed the shrinkage of absorption edges around the optical band-gaps. - Abstract: In this article Cd-Zn sulphide thin films deposited onto soda lime glass substrates via chemical bath deposition (CBD) technique were investigated for photovoltaic applications. The synthesized films were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), and ultraviolet visible (UV–vis) spectroscopic methodologies. A higher degree of crystallinity of the films was attained with the increase of film thicknesses. SEM micrographs exhibited a partial crystalline structure with a particulate appearance surrounded by the amorphous grain boundaries. The optical absorbance and absorption coefficient of the films were also enhanced significantly with the increase in film thicknesses. Optical band-gap analysis indicated a monotonic decrease in direct and indirect band-gaps with the increase of thicknesses of the films. The presence of direct and indirect transitional energies due to the exponential falling edges of the absorption curves may either be due to the lack of long-range order or to the existence of defects in the films. The declination of the optical absorption edges was also confirmed via Urbach energy and steepness parameters studies.

Effects of interlayer Sn-Sn lone pair interaction on the band gap of bulk and nanosheet SnO

Science.gov (United States)

Umezawa, Naoto; Zhou, Wei

2015-03-01

Effects of interlayer lone-pair interactions on the electronic structure of SnO are firstly explored by the density-functional theory. Our comprehensive study reveals that the band gap of SnO opens as increase in the interlayer Sn-Sn distance. The effect is rationalized by the character of band edges which consists of bonding and anti-bonding states from interlayer lone pair interactions. The band edges for several nanosheets and strained double-layer SnO are estimated. We conclude that the double-layer SnO is a promising material for visible-light driven photocatalyst for hydrogen evolution. This work is supported by the Japan Science and Technology Agency (JST) Precursory Research for Embryonic Science and Technology (PRESTO) program.

Quasimonochromatic x-ray source using photoabsorption-edge transition radiation

International Nuclear Information System (INIS)

Piestrup, M.A.; Boyers, D.G.; Pincus, C.I.; Harris, J.L.; Maruyama, X.K.; Bergstrom, J.C.; Caplan, H.S.; Silzer, R.M.; Skopik, D.M.

1991-01-01

By designing transition radiators to emit x rays at the foil material's K-, L-, or M-shell photoabsorption edge, the x-ray spectrum is narrowed. The source is quasimonochromatic, directional, and intense and uses an electron beam whose energy is considerably lower than that needed for synchrotron sources. Depending upon the selection of foil material, the radiation can be produced wherever there is a photoabsorption edge. In this paper we report the results of the measurement of the x-ray spectrum from a transition radiator composed of 10 foils of 2-μm titanium and exposed to low-current, 90.2-MeV electrons. The measured band of emission was from 3.2 to 5 keV. In addition, a measurment was performed of the total power from a transition radiator composed of 18 foils of 2.0-μm copper exposed to a high-average-current electron beam of 40 μA and at energies of 135, 172, and 200 MeV. The maximum measured power was 4.0 mW. The calculated band of emission was from 4 to 9 keV

Effect of conduction band nonparabolicity on the optical properties in ...

Indian Academy of Sciences (India)

the bulk conduction band edge, the correction due to nonparabolicity can be important. [9,10]. In a narrow QW under a strong magnetic field, the optical absorption coefficients calculated with the nonparabolicity correction shows remarkable deviation from results obtained using parabolic energy approximation [11].

Edge currents in frustrated Josephson junction ladders

Science.gov (United States)

Marques, A. M.; Santos, F. D. R.; Dias, R. G.

2016-09-01

We present a numerical study of quasi-1D frustrated Josephson junction ladders with diagonal couplings and open boundary conditions, in the large capacitance limit. We derive a correspondence between the energy of this Josephson junction ladder and the expectation value of the Hamiltonian of an analogous tight-binding model, and show how the overall superconducting state of the chain is equivalent to the minimum energy state of the tight-binding model in the subspace of one-particle states with uniform density. To satisfy the constraint of uniform density, the superconducting state of the ladder is written as a linear combination of the allowed k-states of the tight-binding model with open boundaries. Above a critical value of the parameter t (ratio between the intra-rung and inter-rung Josephson couplings) the ladder spontaneously develops currents at the edges, which spread to the bulk as t is increased until complete coverage is reached. Above a certain value of t, which varies with ladder size (t = 1 for an infinite-sized ladder), the edge currents are destroyed. The value t = 1 corresponds, in the tight-binding model, to the opening of a gap between two bands. We argue that the disappearance of the edge currents with this gap opening is not coincidental, and that this points to a topological origin for these edge current states.

Calculation of band alignments and quantum confinement effects in zero- and one-dimensional pseudomorphic structures

International Nuclear Information System (INIS)

Yang, M.; Sturm, J.C.; Prevost, J.

1997-01-01

The strain field distributions and band lineups of zero-dimensional and one-dimensional strained pseudomorphic semiconductor particles inside a three-dimensional matrix of another semiconductor have been studied. The resulting strain in the particle and the matrix leads to band alignments considerably different from that in the conventional two-dimensional (2D) pseudomorphic growth case. The models are first applied to an ideal spherical and cylindrical Si 1-x Ge x particle in a large Si matrix. In contrast to the 2D case, the band alignments for both structures are predicted to be strongly type II, where the conduction-band edge and the valence-band edge of the Si matrix are both significantly lower than those in the Si 1-x Ge x inclusion, respectively. Band lineups and the lowest electron endash heavy-hole transition energies of a pseudomorphic V-groove Si 1-x Ge x quantum wire inside a large Si matrix have been calculated numerically for different size structures. The photoluminescence energies of a large Si 1-x Ge x V-groove structure on Si will be lower than those of conventional 2D strained Si 1-x Ge x for similar Ge contents. copyright 1997 The American Physical Society

Bilayer graphene: gap tunability and edge properties

International Nuclear Information System (INIS)

Castro, Eduardo V; Santos, J M B Lopes dos; Peres, N M R; Guinea, F; Castro Neto, A H

2008-01-01

Bilayer graphene - two coupled single graphene layers stacked as in graphite - provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how the gap changes with the applied electric field. Within a parallel plate capacitor model and taking into account screening of the external field, we describe real back gated and/or chemically doped bilayer devices. We show that a gap between zero and midinfrared energies can be induced and externally tuned in these devices, making bilayer graphene very appealing from the point of view of applications. However, applications to nanotechnology require careful treatment of the effect of sample boundaries. This being particularly true in graphene, where the presence of edge states at zero energy - the Fermi level of the undoped system - has been extensively reported. Here we show that also bilayer graphene supports surface states localized at zigzag edges. The presence of two layers, however, allows for a new type of edge state which shows an enhanced penetration into the bulk and gives rise to band crossing phenomenon inside the gap of the biased bilayer system.

A Unifying Perspective on Oxygen Vacancies in Wide Band Gap Oxides.

Science.gov (United States)

Linderälv, Christopher; Lindman, Anders; Erhart, Paul

2018-01-04

Wide band gap oxides are versatile materials with numerous applications in research and technology. Many properties of these materials are intimately related to defects, with the most important defect being the oxygen vacancy. Here, using electronic structure calculations, we show that the charge transition level (CTL) and eigenstates associated with oxygen vacancies, which to a large extent determine their electronic properties, are confined to a rather narrow energy range, even while band gap and the electronic structure of the conduction band vary substantially. Vacancies are classified according to their character (deep versus shallow), which shows that the alignment of electronic eigenenergies and CTL can be understood in terms of the transition between cavity-like localized levels in the large band gap limit and strong coupling between conduction band and vacancy states for small to medium band gaps. We consider both conventional and hybrid functionals and demonstrate that the former yields results in very good agreement with the latter provided that band edge alignment is taken into account.

Photo field emission spectroscopy of the tantalum band structure

International Nuclear Information System (INIS)

Kleint, Ch.; Radon, T.

1978-01-01

Photo field emission (PFE) currents of clean and barium covered tantalum tips have been measured with single lines of the mercury arc spectrum and phase-sensitive detection. Field strength and work function were determined from Fowler-Nordheim plots of the FE currents. Shoulders in the PFE current-voltage characteristics could be correlated to transitions in the band structure of tantalum according to a recently proposed two-step PFE model. A comparison with the relativistic calculations of Mattheiss and the nonrelativistic bands of Petroff and Viswanathan shows that Mattheiss' bands are more appropriate. Beside direct transitions several nondirect transitions from the different features composing the upper two density of states maxima below the Fermi edge of tantalum have been found. (Auth.)

Schottky barrier and band edge engineering via the interfacial structure and strain for the Pt/TiO2 heterostructure.

Science.gov (United States)

Ma, Xiangchao; Wu, Xin; Wang, Yucheng; Dai, Ying

2017-07-19

Charge transfer across the Pt/TiO 2 interface, which is mainly determined by the interface Schottky barrier height (SBH), is an important process in the (photo)catalytic and electronic applications of the Pt/TiO 2 composite. Therefore, systematic investigation of the factors that affect the interface SBH is indispensable for understanding and optimizing its performance. In this work, a systematic study of the effects of the interfacial structure and strain on the SBH of the Pt/TiO 2 (001) interface has been carried out based on the first-principles calculations. The results of interface adhesion energy show that two different interfacial structures for the Pt/TiO 2 (001) heterointerface may exist experimentally, namely, O-Pt bonding and Ti-Pt bonding. Moreover, the interfacial structures result in not only different values for the SBH, but also different dependences of the SBH on strain. Detailed investigations show that these versatile modulations of the SBH with the structure and strain are mainly attributed to the strong dependence of the band edges of TiO 2 and the interfacial potential alignments on the strain and structure, suggesting that these results are general and may be applicable to other metal/TiO 2 heterostructures.

Evidence for Topological Edge States in a Large Energy Gap near the Step Edges on the Surface of ZrTe_{5}

Directory of Open Access Journals (Sweden)

R. Wu

2016-05-01

Full Text Available Two-dimensional topological insulators with a large bulk band gap are promising for experimental studies of quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in predicting large-gap two-dimensional topological insulator candidates, none of them have been experimentally demonstrated to have a full gap, which is crucial for quantum spin Hall effect. Here, by combining scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we reveal that ZrTe_{5} crystal hosts a large full gap of ∼100  meV on the surface and a nearly constant density of states within the entire gap at the monolayer step edge. These features are well reproduced by our first-principles calculations, which point to the topologically nontrivial nature of the edge states.

Many-body effects in the mesoscopic x-ray edge problem

International Nuclear Information System (INIS)

Hentschel, Martina; Roeder, Georg; Ullmo, Denis

2007-01-01

Many-body phenomena, a key interest in the investigation of bulk solid state systems, are studied here in the context of the x-ray edge problem for mesoscopic systems. We investigate the many-body effects associated with the sudden perturbation following the x-ray exciton of a core electron into the conduction band. For small systems with dimensions at the nanoscale we find considerable deviations from the well-understood metallic case where Anderson orthogonality catastrophe and the Mahan-Nozieres-DeDominicis response cause characteristic deviations of the photoabsorption cross section from the naive expectation. Whereas the K-edge is typically rounded in metallic systems, we find a slightly peaked K-edge in generic mesoscopic systems with chaotic-coherent electron dynamics. Thus the behavior of the photoabsorption cross section at threshold depends on the system size and is different for the metallic and the mesoscopic case. (author)

Tunable magnetic states on the zigzag edges of hydrogenated and halogenated group-IV nanoribbons

Science.gov (United States)

Chuang, Feng-Chuan; Wang, Tzu-Cheng; Hsu, Chia-Hsiu; Huang, Zhi-Quan; Su, Wan-Sheng; Guo, Guang-Yu

The magnetic and electronic properties of hydrogenated and halogenated group-IV zigzag nanoribbons (ZNRs) are investigated by first-principles density functional calculations. Fascinatingly, we find that all the ZNRs have magnetic edges with a rich variety of electronic and magnetic properties tunable by selecting the parent and passivating elements as well as controlling the magnetization direction and external strain. In particular, the electric property of the edge band structure can be tuned from the conducting to insulating with a band gap up to 0.7 eV, depending on the parent and passivating elements as well as the applied strain, magnetic configuration and magnetization orientation. The last controllability would allow us to develop magnetic on-off nano-switches. Furthermore, ZNRs such as SiI, Ge, GeI and SnH, have fully spin-polarized metallic edge states and thus are promising materials for spintronics. The calculated magnetocrystalline anisotropy energy can be as large as 9 meV/edge-site, being 2000 time greater than that of bulk Ni and Fe ( 5 μeV/atom), and thus has great potential for high density magneto-electric data-storage devices. Finally, the calculated exchange coupling strength and thus magnetic transition temperature increases as the applied strain goes from -5 % to 5 %. Our findings thus show that these ZNRs would have exciting applications in next-generation electronic and spintronic nano-devices.

A k · p treatment of edge states in narrow 2D topological insulators, with standard boundary conditions for the wave function and its derivative.

Science.gov (United States)

Klipstein, P C

2018-07-11

For 2D topological insulators with strong electron-hole hybridization, such as HgTe/CdTe quantum wells, the widely used 4  ×  4 k · p Hamiltonian based on the first electron and heavy hole sub-bands yields an equal number of physical and spurious solutions, for both the bulk states and the edge states. For symmetric bands and zero wave vector parallel to the sample edge, the mid-gap bulk solutions are identical to the edge solutions. In all cases, the physical edge solution is exponentially localized to the boundary and has been shown previously to satisfy standard boundary conditions for the wave function and its derivative, even in the limit of an infinite wall potential. The same treatment is now extended to the case of narrow sample widths, where for each spin direction, a gap appears in the edge state dispersions. For widths greater than 200 nm, this gap is less than half of the value reported for open boundary conditions, which are called into question because they include a spurious wave function component. The gap in the edge state dispersions is also calculated for weakly hybridized quantum wells such as InAs/GaSb/AlSb. In contrast to the strongly hybridized case, the edge states at the zone center only have pure exponential character when the bands are symmetric and when the sample has certain characteristic width values.

Charge transfer of edge states in zigzag silicene nanoribbons with Stone–Wales defects from first-principles

Energy Technology Data Exchange (ETDEWEB)

Ting, Xie [College of Mathematics and Statistics, Chongqing University, Chongqing 401331 (China); School of Mathematics and Statistic, Chongqing University of Technology, Chongqing 400054 (China); Rui, Wang, E-mail: rcwang@cqu.edu.cn [Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400044 (China); State Key Laboratory of Theoretical Physics, Institute of Theoretical Physics, Chinese Academy of Science, Beijing 100190 (China); Shaofeng, Wang [Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400044 (China); Xiaozhi, Wu, E-mail: xiaozhiwu@cqu.edu.cn [Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400044 (China)

2016-10-15

Highlights: • The properties of SW defects in silicene and ZSNRs are obtained. • The SW defects at the edge of ZSNRs induce a sizable gap. • The charge transfer of edge states is resulted from SW defects in ZSNRS. - Abstract: Stone–Wales (SW) defects are favorably existed in graphene-like materials with honeycomb lattice structure and potentially employed to change the electronic properties in band engineering. In this paper, we investigate structural and electronic properties of SW defects in silicene sheet and its nanoribbons as a function of their concentration using the methods of periodic boundary conditions with first-principles calculations. We first calculate the formation energy, structural properties, and electronic band structures of SW defects in silicene sheet, with dependence on the concentration of SW defects. Our results show a good agreement with available values from the previous first-principles calculations. The energetics, structural aspects, and electronic properties of SW defects with dependence on defect concentration and location in edge-hydrogenated zigzag silicene nanoribbons are obtained. For all calculated concentrations, the SW defects prefer to locate at the edge due to the lower formation energy. The SW defects at the center of silicene nanoribbons slightly influence on the electronic properties, whereas the SW defects at the edge of silicene nanoribbons split the degenerate edge states and induce a sizable gap, which depends on the concentration of defects. It is worth to find that the SW defects produce a perturbation repulsive potential, which leads the decomposed charge of edge states at the side with defect to transfer to the other side without defect.

Band structure and optical properties of sinusoidal superlattices: ZnSe1-xTex

International Nuclear Information System (INIS)

Yang, G.; Lee, S.; Furdyna, J. K.

2000-01-01

This paper examines the band structure and optical selection rules in superlattices with a sinusoidal potential profile. The analysis is motivated by the recent successful fabrication of high quality ZnSe 1-x Te x superlattices in which the composition x varies sinusoidally along the growth direction. Although the band alignment in the ZnSe 1-x Te x sinusoidal superlattices is staggered (type II), they exhibit unexpectedly strong photoluminescence, thus suggesting interesting optical behavior. The band structure of such sinusoidal superlattices is formulated in terms of the nearly-free-electron (NFE) approximation, in which the superlattice potential is treated as a perturbation. The resulting band structure is unique, characterized by a single minigap separating two wide, free-electron-like subbands for both electrons and holes. Interband selection rules are derived for optical transitions involving conduction and valence-band states at the superlattice Brillouin-zone center, and at the zone edge. A number of transitions are predicted due to wave-function mixing of different subband states. It should be noted that the zone-center and zone-edge transitions are especially easy to distinguish in these superlattices because of the large width of the respective subbands. The results of the NFE approximation are shown to hold surprisingly well over a wide range of parameters, particularly when the period of the superlattice is short. (c) 2000 The American Physical Society

Influence of a falling edge on high power microwave pulse combination

Science.gov (United States)

Li, Jiawei; Huang, Wenhua; Zhu, Qi; Xiao, Renzhen; Shao, Hao

2016-07-01

This paper presents an explanation of the influence of a microwave falling edge on high-power microwave pulse combination. Through particle-in-cell simulations, we discover that the falling edge is the driving factor that limits the output power of the combined pulses. We demonstrate that the space charge field, which accumulates to become comparable to the E-field at the falling edge of the former pulse, will trap the electrons in the gas layer and decrease its energy to attain a high ionization rate. Hence, avalanche discharge, caused by trapped electrons, makes the plasma density to approach the critical density and cuts off the latter microwave pulse. An X-band combination experiment is conducted with different pulse intervals. This experiment confirms that the high density plasma induced by the falling edge can cut off the latter pulse, and that the time required for plasma recombination in the transmission channel is several microseconds. To ensure a high output power for combined pulses, the latter pulse should be moved ahead of the falling edge of the former one, and consequently, a beat wave with high peak power becomes the output by adding two pulses with normal amplitudes.

Influence of point defects on the near edge structure of hexagonal boron nitride

Science.gov (United States)

McDougall, Nicholas L.; Partridge, Jim G.; Nicholls, Rebecca J.; Russo, Salvy P.; McCulloch, Dougal G.

2017-10-01

Hexagonal boron nitride (hBN) is a wide-band-gap semiconductor with applications including gate insulation layers in graphene transistors, far-ultraviolet light emitting devices and as hydrogen storage media. Due to its complex microstructure, defects in hBN are challenging to identify. Here, we combine x-ray absorption near edge structure (XANES) spectroscopy with ab initio theoretical modeling to identify energetically favorable defects. Following annealing of hBN samples in vacuum and oxygen, the B and N K edges exhibited angular-dependent peak modifications consistent with in-plane defects. Theoretical calculations showed that the energetically favorable defects all produce signature features in XANES. Comparing these calculations with experiments, the principle defects were attributed to substitutional oxygen at the nitrogen site, substitutional carbon at the boron site, and hydrogen passivated boron vacancies. Hydrogen passivation of defects was found to significantly affect the formation energies, electronic states, and XANES. In the B K edge, multiple peaks above the major 1 s to π* peak occur as a result of these defects and the hydrogen passivated boron vacancy produces the frequently observed doublet in the 1 s to σ* transition. While the N K edge is less sensitive to defects, features attributable to substitutional C at the B site were observed. This defect was also calculated to have mid-gap states in its band structure that may be responsible for the 4.1-eV ultraviolet emission frequently observed from this material.

Complex periodic potentials with a finite number of band gaps

International Nuclear Information System (INIS)

Khare, Avinash; Sukhatme, Uday

2006-01-01

We obtain several new results for the complex generalized associated Lame potential V(x)=a(a+1)m sn 2 (y,m)+b(b+1)m sn 2 (y+K(m),m)+f(f+1)m sn 2 (y+K(m)+iK ' (m),m)+g(g+1)m sn 2 (y+iK ' (m),m), where y≡x-K(m)/2-iK ' (m)/2, sn(y,m) is the Jacobi elliptic function with modulus parameter m, and there are four real parameters a,b,f,g. First, we derive two new duality relations which, when coupled with a previously obtained duality relation, permit us to relate the band edge eigenstates of the 24 potentials obtained by permutations of the parameters a,b,f,g. Second, we pose and answer the question: how many independent potentials are there with a finite number 'a' of band gaps when a,b,f,g are integers and a≥b≥f≥g≥0? For these potentials, we clarify the nature of the band edge eigenfunctions. We also obtain several analytic results when at least one of the four parameters is a half-integer. As a by-product, we also obtain new solutions of Heun's differential equation

Band tailing and efficiency limitation in kesterite solar cells

Science.gov (United States)

Gokmen, Tayfun; Gunawan, Oki; Todorov, Teodor K.; Mitzi, David B.

2013-09-01

We demonstrate that a fundamental performance bottleneck for hydrazine processed kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells with efficiencies reaching above 11% can be the formation of band-edge tail states, which quantum efficiency and photoluminescence data indicate is roughly twice as severe as in higher-performing Cu(In,Ga)(S,Se)2 devices. Low temperature time-resolved photoluminescence data suggest that the enhanced tailing arises primarily from electrostatic potential fluctuations induced by strong compensation and facilitated by a lower CZTSSe dielectric constant. We discuss the implications of the band tails for the voltage deficit in these devices.

Observation of topological edge states of acoustic metamaterials at subwavelength scale

Science.gov (United States)

Dai, Hongqing; Jiao, Junrui; Xia, Baizhan; Liu, Tingting; Zheng, Shengjie; Yu, Dejie

2018-05-01

Topological states are of key importance for acoustic wave systems owing to their unique transport properties. In this study, we develop a hexagonal array of hexagonal columns with Helmholtz resonators to obtain subwavelength Dirac cones. Rotation operations are performed to open the Dirac cones and obtain acoustic valley vortex states. In addition, we calculate the angular-dependent frequencies for the band edges at the K-point. Through a topological phase transition, the topological phase of pattern A can change into that of pattern B. The calculations for the bulk dispersion curves show that the acoustic metamaterials exhibit BA-type and AB-type topological edge states. Experimental results demonstrate that a sound wave can transmit well along the topological path. This study could reveal a simple approach to create acoustic topological edge states at the subwavelength scale.

High Selectivity Dual-Band Bandpass Filter with Tunable Lower Passband

Directory of Open Access Journals (Sweden)

Wei-Qiang Pan

2015-01-01

Full Text Available This paper presents a novel method to design dual-band bandpass filters with tunable lower passband and fixed upper passband. It utilizes a trimode resonator with three controllable resonant modes. Discriminating coupling is used to suppress the unwanted mode to avoid the interference. Varactors are utilized to realize tunable responses. The bandwidth of the two bands can be controlled individually. Transmission zeros are generated near the passband edges, resulting in high selectivity. For demonstration, a tunable bandpass filter is implemented. Good agreement between the prediction and measurement validates the proposed method.

Controllable Absorption and Dispersion Properties of an RF-driven Five-Level Atom in a Double-Band Photonic-Band-Gap Material

International Nuclear Information System (INIS)

Ding Chunling; Li Jiahua; Yang Xiaoxue

2011-01-01

The probe absorption-dispersion spectra of a radio-frequency (RF)-driven five-level atom embedded in a photonic crystal are investigated by considering the isotropic double-band photonic-band-gap (PBG) reservoir. In the model used, the two transitions are, respectively, coupled by the upper and lower bands in such a PBG material, thus leading to some curious phenomena. Numerical simulations are performed for the optical spectra. It is found that when one transition frequency is inside the band gap and the other is outside the gap, there emerge three peaks in the absorption spectra. However, for the case that two transition frequencies lie inside or outside the band gap, the spectra display four absorption profiles. Especially, there appear two sharp peaks in the spectra when both transition frequencies exist inside the band gap. The influences of the intensity and frequency of the RF-driven field on the absorptive and dispersive response are analyzed under different band-edge positions. It is found that a transparency window appears in the absorption spectra and is accompanied by a very steep variation of the dispersion profile by adjusting system parameters. These results show that the absorption-dispersion properties of the system depend strongly on the RF-induced quantum interference and the density of states (DOS) of the PBG reservoir. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Angular dependent XPS study of surface band bending on Ga-polar n-GaN

Science.gov (United States)

Huang, Rong; Liu, Tong; Zhao, Yanfei; Zhu, Yafeng; Huang, Zengli; Li, Fangsen; Liu, Jianping; Zhang, Liqun; Zhang, Shuming; Dingsun, An; Yang, Hui

2018-05-01

Surface band bending and composition of Ga-polar n-GaN with different surface treatments were characterized by using angular dependent X-ray photoelectron spectroscopy. Upward surface band bending of varying degree was observed distinctly upon to the treatment methods. Besides the nitrogen vacancies, we found that surface states of oxygen-containing absorbates (O-H component) also contribute to the surface band bending, which lead the Fermi level pined at a level further closer to the conduction band edge on n-GaN surface. The n-GaN surface with lower surface band bending exhibits better linear electrical properties for Ti/GaN Ohmic contacts. Moreover, the density of positively charged surface states could be derived from the values of surface band bending.

Alignment of the dye's molecular levels with the TiO2 band edges in dye-sensitized solar cells: a DFT-TDDFT study

International Nuclear Information System (INIS)

De Angelis, Filippo; Fantacci, Simona; Selloni, Annabella

2008-01-01

We present a theoretical study of the lineup of the LUMO of Ru(II)-polypyridyl (N3 and N719) molecular dyes with the conduction band edge of a TiO 2 anatase nanoparticle. We use density functional theory (DFT) and the Car-Parrinello scheme for efficient optimization of the dye-nanoparticle systems, followed by hybrid B3LYP functional calculations of the electronic structure and time-dependent DFT (TDDFT) determination of the lowest vertical excitation energies. The electronic structure and TDDFT calculations are performed in water solution, using a continuum model. Various approximate procedures to compute the excited state oxidation potential of dye sensitizers are discussed. Our calculations show that the level alignment for the interacting nanoparticle-sensitizer system is very similar, within about 0.1 eV, to that for the separated TiO 2 and dye. The excellent agreement of our results with available experimental data indicates that the approach of this work could be used as an efficient predictive tool to help the optimization of dye-sensitized solar cells.

Performance of high-temperature superconducting band-pass filters with high selectivity for base transceiver applications of digital cellular communication systems

Science.gov (United States)

Kwak, J. S.; Lee, J. H.; Kim, C. O.; Hong, J. P.; Han, S. K.; Char, K.

2002-07-01

Highly selective high-temperature superconducting band-pass filters based on spiral meander line structures have been developed for base transceiver station applications of digital cellular communication systems. The filter comprised 12-pole microstrip line resonators with a circuit size of 0.5 × 17 × 41 mm3. The filter was designed to have a bandwidth of 25 MHz at a centre frequency of 834 MHz. Particularly, the physical size of each resonator was chosen not only to reduce far-field radiation, but also to have reasonable tunability in the filter. Device characteristics exhibited a low insertion loss of 0.4 dB with a 0.2 dB ripple and a return loss better than 10 dB in the pass-band at 65 K. The out-of-band signals were attenuated better than 60 dB at about 3.5 MHz from the lower band edge, and 3.8 MHz from the higher band edge.

Performance of high-temperature superconducting band-pass filters with high selectivity for base transceiver applications of digital cellular communication systems

Energy Technology Data Exchange (ETDEWEB)

Kwak, J.S.; Lee, J.H.; Kim, C.O.; Hong, J.P. [Department of Physics, Hanyang University, Seoul (Korea, Republic of); Han, S.K.; Char, K. [RFtron Inc., Seoul (Korea, Republic of)

2002-07-01

Highly selective high-temperature superconducting band-pass filters based on spiral meander line structures have been developed for base transceiver station applications of digital cellular communication systems. The filter comprised 12-pole microstrip line resonators with a circuit size of 0.5x17x41 mm{sup 3}. The filter was designed to have a bandwidth of 25 MHz at a centre frequency of 834 MHz. Particularly, the physical size of each resonator was chosen not only to reduce far-field radiation, but also to have reasonable tunability in the filter. Device characteristics exhibited a low insertion loss of 0.4 dB with a 0.2 dB ripple and a return loss better than 10 dB in the pass-band at 65 K. The out-of-band signals were attenuated better than 60 dB at about 3.5 MHz from the lower band edge, and 3.8 MHz from the higher band edge. (author)

Performance of high-temperature superconducting band-pass filters with high selectivity for base transceiver applications of digital cellular communication systems

International Nuclear Information System (INIS)

Kwak, J.S.; Lee, J.H.; Kim, C.O.; Hong, J.P.; Han, S.K.; Char, K.

2002-01-01

Highly selective high-temperature superconducting band-pass filters based on spiral meander line structures have been developed for base transceiver station applications of digital cellular communication systems. The filter comprised 12-pole microstrip line resonators with a circuit size of 0.5x17x41 mm 3 . The filter was designed to have a bandwidth of 25 MHz at a centre frequency of 834 MHz. Particularly, the physical size of each resonator was chosen not only to reduce far-field radiation, but also to have reasonable tunability in the filter. Device characteristics exhibited a low insertion loss of 0.4 dB with a 0.2 dB ripple and a return loss better than 10 dB in the pass-band at 65 K. The out-of-band signals were attenuated better than 60 dB at about 3.5 MHz from the lower band edge, and 3.8 MHz from the higher band edge. (author)

Closed-edged bilayer phosphorene nanoribbons producing from collapsing armchair phosphorene nanotubes

Science.gov (United States)

Liao, Xiangbiao; Xiao, Hang; Lu, Xiaobo; Chen, Youlong; Shi, Xiaoyang; Chen, Xi

2018-02-01

A new phosphorous allotrope, closed-edged bilayer phosphorene nanoribbon, is proposed via radially deforming armchair phosphorene nanotubes. Using molecular dynamics simulations, the transformation pathway from round PNTs falls into two types of collapsed structures: arc-like and sigmoidal bilayer nanoribbons, dependent on the number of phosphorene unit cells. The fabricated nanoribbions are energetically more stable than their parent nanotubes. It is also found via ab initio calculations that the band structure along tube axis substantially changes with the structural transformation. The direct-to-indirect transition of band gap is highlighted when collapsing into the arc-like nanoribbons but not the sigmoidal ones. Furthermore, the band gaps of these two types of nanoribbons show significant size-dependence of the nanoribbon width, indicative of wider tunability of their electrical properties.

Dendrometer bands made easy: using modified cable ties to measure incremental growth of trees

Science.gov (United States)

Anemaet, Evelyn R.; Middleton, Beth A.

2013-01-01

Dendrometer bands are a useful way to make sequential repeated measurements of tree growth, but traditional dendrometer bands can be expensive, time consuming, and difficult to construct in the field. An alternative to the traditional method of band construction is to adapt commercially available materials. This paper describes how to construct and install dendrometer bands using smooth-edged, stainless steel, cable tie banding and attachable rollerball heads. As a performance comparison, both traditional and cable tie dendrometer bands were installed on baldcypress trees at the National Wetlands Research Center in Lafayette, Louisiana, by both an experienced and a novice worker. Band installation times were recorded, and growth of the trees as estimated by the two band types was measured after approximately one year, demonstrating equivalence of the two methods. This efficient approach to dendrometer band construction can help advance the knowledge of long-term tree growth in ecological studies.

Low-loss transmission band in photonic crystal waveguides with sharp cutoff at a frequency below the bandgap

NARCIS (Netherlands)

Krüger, A.C.; Zhang, M.; Groothoff, N.; Malureanu, R.; Kristensen, M.

2011-01-01

We present TE transmission measurements of photonic crystal waveguides with high hole radius to period ratio r/¿ = 0.388. This geometry introduces a unique low loss transmission band in addition to the traditional PhC guiding band and very sharp transmission edges for devices with a length of 50 µm

Stability of edge states and edge magnetism in graphene nanoribbons

OpenAIRE

Kunstmann, Jens; Özdoğan, Cem; Quandt, Alexander; Fehske, Holger

2010-01-01

We critically discuss the stability of edge states and edge magnetism in zigzag edge graphene nanoribbons (ZGNRs). We point out that magnetic edge states might not exist in real systems, and show that there are at least three very natural mechanisms - edge reconstruction, edge passivation, and edge closure - which dramatically reduce the effect of edge states in ZGNRs or even totally eliminate them. Even if systems with magnetic edge states could be made, the intrinsic magnetism would not be ...

Luminescence properties of KCl:Ag{sup -} crystals excited near the fundamental absorption edge

Energy Technology Data Exchange (ETDEWEB)

Kawai, Taketoshi, E-mail: buri@p.s.osakafu-u.ac.jp [Department of Physical Science, Graduate School of Science, Osaka Prefecture University, Gakuen-cho 1-1, Naka-ku, Sakai, Osaka 599-8531 (Japan); Hirai, Takeshi [Department of Physical Science, Faculty of Science and Engineering, Ritsumeikan University, Noji Higashi 1-1-1, Kusatsu, Shiga 525-8577 (Japan)

2012-02-15

Luminescence properties of KCl single crystals doped with Ag{sup -} centers have been investigated under various excitation energies around the fundamental absorption edge at low temperatures. Under the excitation at 6.89 eV, which is lower than the intrinsic exciton energy by 0.87 eV, the A Prime luminescence band due to the intraionic transition in the Ag{sup -} ion is dominantly observed at 2.91 eV. On the other hand, the excitation at 6.66 eV induces a broad luminescence band at 2.60 eV in addition to the A Prime luminescence band. From the comparison with the localized excitons in KCl:I crystals, the 2.60 eV luminescence band is attributed to the two-center type localized exciton related with the Ag{sup -} ion. The adiabatic potential energy surfaces of the excited states in the Ag{sup -} center and the localized exciton in KCl:Ag{sup -} are discussed. - Highlights: Black-Right-Pointing-Pointer We study the luminescence properties of KCl single crystals doped with Ag{sup -} ions. Black-Right-Pointing-Pointer The excitation around the absorption edge induces a broad luminescence at 2.60 eV. Black-Right-Pointing-Pointer The 2.60 eV luminescence is attributed to the exciton localized at the Ag{sup -} ion. Black-Right-Pointing-Pointer The localized exciton has the two-center type configuration of the relaxed exciton.

Optimizing Transition Edge Sensors for High-Resolution X-ray Spectroscopy

International Nuclear Information System (INIS)

Saab, Tarek; Bandler, Simon R.; Boyce, Kevin; Chervenak, James A.; Figueroa-Feliciano, Enectali; Iyomoto, Naoko; Kelley, Richard L.; Kilbourne, Caroline A.; Porter, Frederick S.; Sadleir, John E.

2006-01-01

Transition Edge Sensors (TES) have found applications as astronomical detectors ranging from the microwave to the gamma ray energy bands. Each energy band, however, imposes a different set of requirements on the TES such as energy and timing resolution, focal plane coverage, and the mechanisms by which the signal is coupled to the detector. This paper focuses on the development of TESs optimized for the 0.1-10 keV energy range at the NASA Goddard Space Flight Center. Such detectors are suitable candidates for some of the upcoming X-ray observatories such as NeXT and Constellation-X. Ongoing efforts at producing, characterizing, and modeling such devices, as well as the latest results, are discussed

Origin of the near-band-edge photoluminescence in ZnO nanorods realised by vapour phase epitaxy and aqueous chemical growth

Energy Technology Data Exchange (ETDEWEB)

Bekeny, C.; Hilker, B.; Wischmeier, L.; Voss, T. [IFP, University of Bremen, P.O Box 330440, 28334 Bremen (Germany); Postels, B.; Mofor, A.; Bakin, Andrey; Waag, A. [IHT, TU Braunschweig, P.O Box 3329, 38023 Braunschweig (Germany)

2007-07-01

Well established high temperature growth techniques like the vapourliquid-solid (VLS: 1100 C) and vapour-phase-epitaxy (VPE: 800 C) have been successfully optimized while the low-temperature aqueous chemical growth (ACG: 90 C) is being extended to yield large-scale high quality ZnO nanorods. Here, a detailed and systematic photoluminescence (PL) study is presented to understand the microscopic processes responsible for the near-band-edge (NBE) emission in nanorods obtained from these processes. For the ACG samples, the as-grown nanorods show relatively broad NBE emission (15 meV) attributed to the presence of large donor densities. After annealing in various atmospheres at {proportional_to}800 C, a significant reduction of the linewidth ({proportional_to}4 meV) and even the appearance of relatively sharp excitonic transitions is explained by the drastic reduction of the donor density. In contrast, the as-grown VPE and VLS samples exhibit well-resolved and sharp peaks resulting from exciton-related transitions. There is a shift in the room-temperature PL peak for VLS and VPE samples and is shown to result from contributions of the free exciton peak, its first and second order phonon replicas and not due to quantum confinement and or laser heating as assumed in literature.

Electrically controlled band gap and topological phase transition in two-dimensional multilayer germanane

International Nuclear Information System (INIS)

Qi, Jingshan; Li, Xiao; Qian, Xiaofeng

2016-01-01

Electrically controlled band gap and topological electronic states are important for the next-generation topological quantum devices. In this letter, we study the electric field control of band gap and topological phase transitions in multilayer germanane. We find that although the monolayer and multilayer germananes are normal insulators, a vertical electric field can significantly reduce the band gap of multilayer germananes owing to the giant Stark effect. The decrease of band gap eventually leads to band inversion, transforming them into topological insulators with nontrivial Z_2 invariant. The electrically controlled topological phase transition in multilayer germananes provides a potential route to manipulate topologically protected edge states and design topological quantum devices. This strategy should be generally applicable to a broad range of materials, including other two-dimensional materials and ultrathin films with controlled growth.

Predicted Mobility Edges in One-Dimensional Incommensurate Optical Lattices: An Exactly Solvable Model of Anderson Localization

International Nuclear Information System (INIS)

Biddle, J.; Das Sarma, S.

2010-01-01

Localization properties of noninteracting quantum particles in one-dimensional incommensurate lattices are investigated with an exponential short-range hopping that is beyond the minimal nearest-neighbor tight-binding model. Energy dependent mobility edges are analytically predicted in this model and verified with numerical calculations. The results are then mapped to the continuum Schroedinger equation, and an approximate analytical expression for the localization phase diagram and the energy dependent mobility edges in the ground band is obtained.

The effect of density-of-state tails on band-to-band tunneling: Theory and application to tunnel field effect transistors

Science.gov (United States)

Sant, S.; Schenk, A.

2017-10-01

It is demonstrated how band tail states in the semiconductor influence the performance of a Tunnel Field Effect Transistor (TFET). As a consequence of the smoothened density of states (DOS) around the band edges, the energetic overlap of conduction and valence band states occurs gradually at the onset of band-to-band tunneling (BTBT), thus degrading the sub-threshold swing (SS) of the TFET. The effect of the band tail states on the current-voltage characteristics is modelled quantum-mechanically based on the idea of zero-phonon trap-assisted tunneling between band and tail states. The latter are assumed to arise from a 3-dimensional pseudo-delta potential proposed by Vinogradov [1]. This model potential allows the derivation of analytical expressions for the generation rate covering the whole range from very strong to very weak localization of the tail states. Comparison with direct BTBT in the one-band effective mass approximation reveals the essential features of tail-to-band tunneling. Furthermore, an analytical solution for the problem of tunneling from continuum states of the disturbed DOS to states in the opposite band is found, and the differences to direct BTBT are worked out. Based on the analytical expressions, a semi-classical model is implemented in a commercial device simulator which involves numerical integration along the tunnel paths. The impact of the tail states on the device performance is analyzed for a nanowire Gate-All-Around TFET. The simulations show that tail states notably impact the transfer characteristics of a TFET. It is found that exponentially decaying band tails result in a stronger degradation of the SS than tail states with a Gaussian decay of their density. The developed model allows more realistic simulations of TFETs including their non-idealities.

(d -2 ) -Dimensional Edge States of Rotation Symmetry Protected Topological States

Science.gov (United States)

Song, Zhida; Fang, Zhong; Fang, Chen

2017-12-01

We study fourfold rotation-invariant gapped topological systems with time-reversal symmetry in two and three dimensions (d =2 , 3). We show that in both cases nontrivial topology is manifested by the presence of the (d -2 )-dimensional edge states, existing at a point in 2D or along a line in 3D. For fermion systems without interaction, the bulk topological invariants are given in terms of the Wannier centers of filled bands and can be readily calculated using a Fu-Kane-like formula when inversion symmetry is also present. The theory is extended to strongly interacting systems through the explicit construction of microscopic models having robust (d -2 )-dimensional edge states.

Calculation of Energy Diagram of Asymmetric Graded-Band-Gap Semiconductor Superlattices.

Science.gov (United States)

Monastyrskii, Liubomyr S; Sokolovskii, Bogdan S; Alekseichyk, Mariya P

2017-12-01

The paper theoretically investigates the peculiarities of energy diagram of asymmetric graded-band-gap superlattices with linear coordinate dependences of band gap and electron affinity. For calculating the energy diagram of asymmetric graded-band-gap superlattices, linearized Poisson's equation has been solved for the two layers forming a period of the superlattice. The obtained coordinate dependences of edges of the conduction and valence bands demonstrate substantial transformation of the shape of the energy diagram at changing the period of the lattice and the ratio of width of the adjacent layers. The most marked changes in the energy diagram take place when the period of lattice is comparable with the Debye screening length. In the case when the lattice period is much smaller that the Debye screening length, the energy diagram has the shape of a sawtooth-like pattern.

gamma-induced modification on optical band gap of CR-39 SSNTD

International Nuclear Information System (INIS)

Zaki, M.F.

2010-01-01

effect of gamma irradiation on optical absorption of nuclear track detectors like CR-39 was studied at different absorbed doses using ultraviolet-visible (UV-VIS)spectroscopy. the existence of the peaks, their shifting and broadening as a result of gamma irradiation has been discussed. the width of the tail of localized states in the band gap (E u )was evaluated using the Urbach edge method. finally the indirect and direct band gap in pristine and gamma irradiated CR-39 have been determined. the values of indirect band gap have been found to be lower than the corresponding values of direct band gap. a decrease in the optical energy gap with increasing the gamma absorbed dose can be discussed on the basis of gamma-irradiation-induced defects in the CR-39. the correlation between optical band gap and the number of carbon atoms in a cluster with modified Tauc's equation has been discussed in case of CR-39.

Abrikosov flux-lines in two-band superconductors with mixed dimensionality

International Nuclear Information System (INIS)

Tanaka, K; Eschrig, M

2009-01-01

We study vortex structure in a two-band superconductor, in which one band is ballistic and quasi-two-dimensional (2D), and the other is diffusive and three-dimensional (3D). A circular cell approximation of the vortex lattice within the quasiclassical theory of superconductivity is applied to a recently developed model appropriate for such a two-band system (Tanaka et al 2006 Phys. Rev. B 73 220501(R); Tanaka et al 2007 Phys. Rev. B 75 214512). We assume that superconductivity in the 3D diffusive band is 'weak', i.e. mostly induced, as is the case in MgB 2 . Hybridization with the 'weak' 3D diffusive band has significant and intriguing influence on the electronic structure of the 'strong' 2D ballistic band. In particular, the Coulomb repulsion and the diffusivity in the 'weak' band enhance suppression of the order parameter and enlargement of the vortex core by magnetic field in the 'strong' band, resulting in reduced critical temperature and field. Moreover, increased diffusivity in the 'weak' band can result in an upward curvature of the upper critical field near the transition temperature. A particularly interesting feature found in our model is the appearance of additional bound states at the gap edge in the 'strong' ballistic band, which are absent in the single-band case. Furthermore, coupling with the 'weak' diffusive band leads to reduced bandgaps and van Hove singularities of energy bands of the vortex lattice in the 'strong' ballistic band. We find these intriguing features for parameter values appropriate for MgB 2 .

Quanty for core level spectroscopy - excitons, resonances and band excitations in time and frequency domain

International Nuclear Information System (INIS)

Haverkort, Maurits W.

2016-01-01

Depending on the material and edge under consideration, core level spectra manifest themselves as local excitons with multiplets, edge singularities, resonances, or the local projected density of states. Both extremes, i.e., local excitons and non-interacting delocalized excitations are theoretically well under control. Describing the intermediate regime, where local many body interactions and band-formation are equally important is a challenge. Here we discuss how Quanty , a versatile quantum many body script language, can be used to calculate a variety of different core level spectroscopy types on solids and molecules, both in the frequency as well as the time domain. The flexible nature of Quanty allows one to choose different approximations for different edges and materials. For example, using a newly developed method merging ideas from density renormalization group and quantum chemistry [1-3], Quanty can calculate excitons, resonances and band-excitations in x-ray absorption, photoemission, x-ray emission, fluorescence yield, non-resonant inelastic x-ray scattering, resonant inelastic x-ray scattering and many more spectroscopy types. Quanty can be obtained from: http://www.quanty.org. (paper)

All-dielectric band stop filter at terahertz frequencies

Science.gov (United States)

Yin, Shan; Chen, Lin

2018-01-01

We design all-dielectric band stop filters with silicon subwavelength rod and block arrays at terahertz frequencies. Supporting magnetic dipole resonances originated from the Mia resonance, the all-dielectric filters can modulate the working band by simply varying the structural geometry, while eliminating the ohmic loss induced by the traditional metallic metamaterials and uninvolved with the complicated mechanism. The nature of the resonance in the silicon arrays is clarified, which is attributed to the destructive interference between the directly transmitted waves and the waves emitted from the magnetic dipole resonances, and the resonance frequency is determined by the dielectric structure. By particularly designing the geometrical parameters, the profile of the transmission spectrum can be tailored, and the step-like band edge can be obtained. The all-dielectric filters can realize 93% modulation of the transmission within 0.04 THz, and maintain the bandwidth of 0.05 THz. This work provides a method to develop THz functional devices, such as filters, switches and sensors.

Hole geometry effect on stop-band characteristics of photonic crystal in Ti-diffused LiNbO_3 waveguide

International Nuclear Information System (INIS)

Zhao, Quan-Zhou; Zhang, Zi-Bo; Xu, Jia-Qi; Wong, Wing-Han; Yu, Dao-Yin; Pun, Edwin Yue-Bun

2017-01-01

Effects of finite hole depth and non-cylindrical hole shape on stop-band characteristics of photonic crystal formed by air-hole square lattice in Ti-diffused LiNbO_3 strip waveguide were studied theoretically. The study shows that hole depth determines the contrast of stop-band, and the hole radius and conical angle determine the bandgap and location. Cylindrical holes must be sufficiently deep so as to overlap most of waveguide mode and hence obtain a stop-band with high contrast, sharp edge and broad bandgap. Non-cylindrical holes seriously affect the stop-band features. Conical holes cause low contrast and narrow bandgap, and the stop-band shifts with the conical angle. For the cylindrical-conical hybrid holes, the cylindrical portion determines the desired features. Given the difficulty in fabricating high aspect-ratio cylindrical holes, we propose to fabricate the holes at the bottom of a shallow trench, which is introduced into waveguide surface prior to the hole milling. - Highlights: • Cylindrical hole must be deep enough and a shallow waveguide is required. • Increasing hole radius causes blueshift, broadening and edge sharpening of band. • Non-cylindrical hole seriously affects gap, location and contrast of stop-band. • For cylindrical-conical hybrid hole, cylindrical part determines desired features. • A scheme of milling holes at bottom of a trench on waveguide surface is proposed.

Understanding band gaps of solids in generalized Kohn-Sham theory.

Science.gov (United States)

Perdew, John P; Yang, Weitao; Burke, Kieron; Yang, Zenghui; Gross, Eberhard K U; Scheffler, Matthias; Scuseria, Gustavo E; Henderson, Thomas M; Zhang, Igor Ying; Ruzsinszky, Adrienn; Peng, Haowei; Sun, Jianwei; Trushin, Egor; Görling, Andreas

2017-03-14

The fundamental energy gap of a periodic solid distinguishes insulators from metals and characterizes low-energy single-electron excitations. However, the gap in the band structure of the exact multiplicative Kohn-Sham (KS) potential substantially underestimates the fundamental gap, a major limitation of KS density-functional theory. Here, we give a simple proof of a theorem: In generalized KS theory (GKS), the band gap of an extended system equals the fundamental gap for the approximate functional if the GKS potential operator is continuous and the density change is delocalized when an electron or hole is added. Our theorem explains how GKS band gaps from metageneralized gradient approximations (meta-GGAs) and hybrid functionals can be more realistic than those from GGAs or even from the exact KS potential. The theorem also follows from earlier work. The band edges in the GKS one-electron spectrum are also related to measurable energies. A linear chain of hydrogen molecules, solid aluminum arsenide, and solid argon provide numerical illustrations.

Electrodynamics of an omega-band as deduced from optical and magnetometer data

Directory of Open Access Journals (Sweden)

H. Vanhamäki

2009-09-01

Full Text Available We investigate an omega-band event that took place above northern Scandinavia around 02:00–02:30 UT on 9 March 1999. In our analysis we use ground based magnetometer, optical and riometer measurements together with satellite based optical images. The optical and riometer data are used to estimate the ionospheric Hall and Pedersen conductances, while ionospheric equivalent currents are obtained from the magnetometer measurements. These data sets are used as input in a local KRM calculation, which gives the ionospheric potential electric field as output, thus giving us a complete picture of the ionospheric electrodynamic state during the omega-band event. The overall structure of the electric field and field-aligned current (FAC provided by the local KRM method are in good agreement with previous studies. Also the E×B drift velocity calculated from the local KRM solution is in good qualitative agreement with the plasma velocity measured by the Finnish CUTLASS radar, giving further support for the new local KRM method. The high-resolution conductance estimates allow us to discern the detailed structure of the omega-band current system. The highest Hall and Pedersen conductances, ~50 and ~25 S, respectively, are found at the edges of the bright auroral tongue. Inside the tongue, conductances are somewhat smaller, but still significantly higher than typical background values. The electric field shows a converging pattern around the tongues, and the field strength drops from ~40 mV/m found at optically dark regions to ~10 mV/m inside the areas of enhanced conductivity. Downward FAC flow in the dark regions, while upward currents flow inside the auroral tongue. Additionally, sharp conductance gradients at the edge of an auroral tongue are associated with narrow strips of intense FACs, so that a strip of downward current flows at the eastern (leading edge and a similar strip of upward current is present at the western (trailing edge. The Joule

Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures

Science.gov (United States)

Pérez-Caro, M.; Rodríguez, A. G.; Vidal, M. A.; Navarro-Contreras, H.

2010-07-01

Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that β-InN films have large free-carrier concentrations present (>1019 cm-3), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in β-InN, analogous to wurtzite InN, follows a nonparabolic behavior.

Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures

International Nuclear Information System (INIS)

Perez-Caro, M.; Rodriguez, A. G.; Vidal, M. A.; Navarro-Contreras, H.

2010-01-01

Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that β-InN films have large free-carrier concentrations present (>10 19 cm -3 ), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in β-InN, analogous to wurtzite InN, follows a nonparabolic behavior.

Design lithium storage materials by lithium adatoms adsorption at the edges of zigzag silicene nanoribbon: A first principle study

Science.gov (United States)

Guo, Gang; Mao, Yuliang; Zhong, Jianxin; Yuan, Jianmei; Zhao, Hongquan

2017-06-01

First-principles spin-polarized calculations are performed to design lithium storage materials using the active edges of zigzag silicene nanoribbon (ZSiNR). We predict that edge-adsorption of Li adatoms on zigzag silicene nanoribbon is preferred in energy to form new type lithium storage materials. Significant charge transfer from Li adatoms to Si atoms at the edges of ZSiNR is found, indicating the main ionic interactions. It is found that the band structures of ZSiNR with Li adsorptions are sensitive with the variation of sites of adatoms at the two edges. Ferro-magnetic to antiferro-magnetic change is found in ZSiNR with symmetrical adsorption of Li adatoms at its two edges. Other unsymmetrical Li adsorptions at the edges of ZSiNR prefer to stay in ferro-magnetic state as that in narrow pristine ZSiNR.

Unified description of perturbation theory and band center anomaly in one-dimensional Anderson localization

International Nuclear Information System (INIS)

Kang, Kai; Qin, Shaojing; Wang, Chuilin

2011-01-01

We calculated numerically the localization length of one-dimensional Anderson model with diagonal disorder. For weak disorder, we showed that the localization length changes continuously as the energy changes from the band center to the boundary of the anomalous region near the band edge. We found that all the localization lengths for different disorder strengths and different energies collapse onto a single curve, which can be fitted by a simple equation. Thus the description of the perturbation theory and the band center anomaly were unified into this equation. -- Highlights: → We study the band center anomaly of one-dimensional Anderson localization. → We study numerically the Lyapunov exponent through a parametrization method of the transfer matrix. → We give a unified equation to describe the band center anomaly and perturbation theory.

Bifurcations of edge states—topologically protected and non-protected—in continuous 2D honeycomb structures

International Nuclear Information System (INIS)

Fefferman, C L; Lee-Thorp, J P; Weinstein, M I

2016-01-01

Edge states are time-harmonic solutions to energy-conserving wave equations, which are propagating parallel to a line-defect or ‘edge’ and are localized transverse to it. This paper summarizes and extends the authors’ work on the bifurcation of topologically protected edge states in continuous two-dimensional (2D) honeycomb structures. We consider a family of Schrödinger Hamiltonians consisting of a bulk honeycomb potential and a perturbing edge potential. The edge potential interpolates between two different periodic structures via a domain wall. We begin by reviewing our recent bifurcation theory of edge states for continuous 2D honeycomb structures (http://arxiv.org/abs/1506.06111). The topologically protected edge state bifurcation is seeded by the zero-energy eigenstate of a one-dimensional Dirac operator. We contrast these protected bifurcations with (more common) non-protected bifurcations from spectral band edges, which are induced by bound states of an effective Schrödinger operator. Numerical simulations for honeycomb structures of varying contrasts and ‘rational edges’ (zigzag, armchair and others), support the following scenario: (a) for low contrast, under a sign condition on a distinguished Fourier coefficient of the bulk honeycomb potential, there exist topologically protected edge states localized transverse to zigzag edges. Otherwise, and for general edges, we expect long lived edge quasi-modes which slowly leak energy into the bulk. (b) For an arbitrary rational edge, there is a threshold in the medium-contrast (depending on the choice of edge) above which there exist topologically protected edge states. In the special case of the armchair edge, there are two families of protected edge states; for each parallel quasimomentum (the quantum number associated with translation invariance) there are edge states which propagate in opposite directions along the armchair edge. (paper)

Bifurcations of edge states—topologically protected and non-protected—in continuous 2D honeycomb structures

Science.gov (United States)

Fefferman, C. L.; Lee-Thorp, J. P.; Weinstein, M. I.

2016-03-01

Edge states are time-harmonic solutions to energy-conserving wave equations, which are propagating parallel to a line-defect or ‘edge’ and are localized transverse to it. This paper summarizes and extends the authors’ work on the bifurcation of topologically protected edge states in continuous two-dimensional (2D) honeycomb structures. We consider a family of Schrödinger Hamiltonians consisting of a bulk honeycomb potential and a perturbing edge potential. The edge potential interpolates between two different periodic structures via a domain wall. We begin by reviewing our recent bifurcation theory of edge states for continuous 2D honeycomb structures (http://arxiv.org/abs/1506.06111). The topologically protected edge state bifurcation is seeded by the zero-energy eigenstate of a one-dimensional Dirac operator. We contrast these protected bifurcations with (more common) non-protected bifurcations from spectral band edges, which are induced by bound states of an effective Schrödinger operator. Numerical simulations for honeycomb structures of varying contrasts and ‘rational edges’ (zigzag, armchair and others), support the following scenario: (a) for low contrast, under a sign condition on a distinguished Fourier coefficient of the bulk honeycomb potential, there exist topologically protected edge states localized transverse to zigzag edges. Otherwise, and for general edges, we expect long lived edge quasi-modes which slowly leak energy into the bulk. (b) For an arbitrary rational edge, there is a threshold in the medium-contrast (depending on the choice of edge) above which there exist topologically protected edge states. In the special case of the armchair edge, there are two families of protected edge states; for each parallel quasimomentum (the quantum number associated with translation invariance) there are edge states which propagate in opposite directions along the armchair edge.

Antenna-coupled bolometer arrays using transition-edge sensors

Energy Technology Data Exchange (ETDEWEB)

Myers, Michael J. [Department of Physics, University of California, Berkeley, California 94720 (United States)]. E-mail: mmyers@cosmology.berkeley.edu; Ade, Peter [School of Physics and Astronomy, Cardiff University, Cardiff, Wales (United Kingdom); Arnold, Kam [Department of Physics, University of California, Berkeley, California 94720 (United States); Engargiola, Greg [Department of Astronomy, University of California, Berkeley, California 94720 (United States); Holzapfel, Bill [Department of Physics, University of California, Berkeley, California 94720 (United States); Lee, Adrian T. [Department of Physics, University of California, Berkeley, California 94720 (United States); O' Brient, Roger [Department of Physics, University of California, Berkeley, California 94720 (United States); Richards, Paul L. [Department of Physics, University of California, Berkeley, California 94720 (United States); Smith, Andy [Northrop Grumman, Redondo Beach, California 90278 (United States); Spieler, Helmuth [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Tran, Huan T. [Department of Physics, University of California, Berkeley, California 94720 (United States)

2006-04-15

We are developing antenna-coupled Transition-Edge Sensor (TES) bolometer arrays for use in measurements of the CMB polarization. TES bolometers have many well-known advantages over conventional bolometers, such as increased speed, linearity, and the existence of readout multiplexers. Antenna-coupled bolometers use an on-chip planar antenna to couple light into the bolometer. The antenna directivity and polarization sensitivity, along with the potential for on-chip band defining filters and channelizing circuits, allow a significant increase in focal plane integration. This eliminates the bulky horns, quasioptical filters, dichroics, and polarizers which might otherwise be needed in a conventional bolometric system. This simplification will ease the construction of receivers with larger numbers of pixels. We report on the fabrication and optical testing of single antenna-coupled bolometer pixels with integrated band defining filters. We will also discuss current progress on fabrication of a bolometer array based on this design.

Characterizing the 21-cm Signal from Neutral Hydrogen in the IGM at Redshifts 27>z>6 with EDGES

Science.gov (United States)

Monsalve, Raul A.; Rogers, Alan E. E.; Bowman, Judd D.; Mozdzen, Thomas J.; Mahesh, Nivedita

2018-01-01

Understanding the period when the first stars formed and ionized the InterGalactic Medium (IGM) during the Epoch of Reionization (EoR) represents one of the main objectives of modern cosmology. The Experiment to Detect the Global EoR Signature (EDGES) strives to characterize this period by measuring, for the first time, the all-sky spectrum of the 21-cm signal produced by neutral hydrogen in the IGM at redshifts 27>z>6. In this talk I will describe recent EDGES constraints for the 21-cm signal. Specifically, with measurements from the EDGES High-Band instrument in the range 90-190 MHz, we rule out traditional Tanh models for the epoch of reionization with durations of up to dz=1 over the redshift range 14>z>7. We also rule out a wide range of phenomenological and physically-motivated 21-cm models that contain a large absorption feature in this redshift range, produced by the complex interaction between UV and X-ray radiation from the first sources and the neutral hydrogen in the IGM. Finally, I will describe our efforts to detect the 21-cm signal in the range 27>z>13 with two Low-Band instruments that have observed over 50-100 MHz since 2015. These instruments implement refined calibration techniques and lessons learned from previous generations of EDGES, and have achieved a level of systematic uncertainty low enough to enable detection. I will present Low-Band analysis results, including a variety of cross-checks performed to discriminate between residual instrumental effects and spectral structure that is intrinsic to the sky. I will conclude by describing the preparation of the next observational campaign with upgraded instrumentation.

Hole geometry effect on stop-band characteristics of photonic crystal in Ti-diffused LiNbO{sub 3} waveguide

Energy Technology Data Exchange (ETDEWEB)

Zhao, Quan-Zhou [Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072 (China); Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin 300072 (China); School of Physics and Electronic Engineering, University of Shanxi Datong, Datong 037009 (China); Zhang, Zi-Bo [University of Toulouse 3, Faculty of Engineering, 118 Route de Narbonne, F-31062 Toulouse (France); Xu, Jia-Qi [Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072 (China); Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin 300072 (China); Wong, Wing-Han, E-mail: eewhwong@cityu.edu.hk [Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072 (China); Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin 300072 (China); Department of Electronic Engineering and State Key Laboratory of Millimeter Waves, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong (China); Yu, Dao-Yin [Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072 (China); Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin 300072 (China); Pun, Edwin Yue-Bun [Department of Electronic Engineering and State Key Laboratory of Millimeter Waves, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong (China); and others

2017-01-15

Effects of finite hole depth and non-cylindrical hole shape on stop-band characteristics of photonic crystal formed by air-hole square lattice in Ti-diffused LiNbO{sub 3} strip waveguide were studied theoretically. The study shows that hole depth determines the contrast of stop-band, and the hole radius and conical angle determine the bandgap and location. Cylindrical holes must be sufficiently deep so as to overlap most of waveguide mode and hence obtain a stop-band with high contrast, sharp edge and broad bandgap. Non-cylindrical holes seriously affect the stop-band features. Conical holes cause low contrast and narrow bandgap, and the stop-band shifts with the conical angle. For the cylindrical-conical hybrid holes, the cylindrical portion determines the desired features. Given the difficulty in fabricating high aspect-ratio cylindrical holes, we propose to fabricate the holes at the bottom of a shallow trench, which is introduced into waveguide surface prior to the hole milling. - Highlights: • Cylindrical hole must be deep enough and a shallow waveguide is required. • Increasing hole radius causes blueshift, broadening and edge sharpening of band. • Non-cylindrical hole seriously affects gap, location and contrast of stop-band. • For cylindrical-conical hybrid hole, cylindrical part determines desired features. • A scheme of milling holes at bottom of a trench on waveguide surface is proposed.

Robust band gap and half-metallicity in graphene with triangular perforations

DEFF Research Database (Denmark)

Gregersen, Søren Schou; Power, Stephen; Jauho, Antti-Pekka

2016-01-01

. The inclusion of spin polarization within a mean-field Hubbard approach gives rise to a large overall magnetic moment at each antidot due to the sublattice imbalance imposed by the triangular geometry. Half-metallic behavior arises from the formation of spin-split dispersive states near the Fermi energy...... disorders. Here we study a rectangular array of triangular antidots with zigzag edge geometries and show that their band gap behavior qualitatively differs from the standard behavior which is exhibited, e.g., by rectangular arrays of armchair-edged triangles. In the spin unpolarized case, zigzag......, and furthermore, of exploiting the strong spin dependence of the system for spintronic applications....

n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices

Directory of Open Access Journals (Sweden)

Hikmat S. Hilal

2003-01-01

system was annealed under nitrogen and used for photoelectrochemical study in water/LiCIO4/Fe(CN63-/Fe(CN64− system. The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. These findings are potentially valuable in future applications of solar energy in hydrogen and oxygen production from water.

Edge-defect induced spin-dependent Seebeck effect and spin figure of merit in graphene nanoribbons.

Science.gov (United States)

Liu, Qing-Bo; Wu, Dan-Dan; Fu, Hua-Hua

2017-10-11

By using the first-principle calculations combined with the non-equilibrium Green's function approach, we have studied spin caloritronic properties of graphene nanoribbons (GNRs) with different edge defects. The theoretical results show that the edge-defected GNRs with sawtooth shapes can exhibit spin-dependent currents with opposite flowing directions by applying temperature gradients, indicating the occurrence of the spin-dependent Seebeck effect (SDSE). The edge defects bring about two opposite effects on the thermal spin currents: the enhancement of the symmetry of thermal spin-dependent currents, which contributes to the realization of pure thermal spin currents, and the decreasing of the spin thermoelectric conversion efficiency of the devices. It is fortunate that applying a gate voltage is an efficient route to optimize these two opposite spin thermoelectric properties towards realistic device applications. Moreover, due to the existence of spin-splitting band gaps, the edge-defected GNRs can be designed as spin-dependent Seebeck diodes and rectifiers, indicating that the edge-defected GNRs are potential candidates for room-temperature spin caloritronic devices.

Electronic and magnetic properties of MoSe2 armchair nanoribbons controlled by the different edge structures

Science.gov (United States)

Zhang, Hui; Zhao, Xu; Gao, Yonghui; Wang, Haiyang; Wang, Tianxing; Wei, Shuyi

2018-03-01

Tow-dimensional materials obviously have potential applications in next-generation nanodevices because of their extraordinary physical and chemical properties and the demands of the market. Using first-principle calculation based on density functional theory, we explore electronic and magnetic properties of the different nanoribbons with various edge structures, namely, with hydrogenation or not. In addition, we also calculate the binding energy to analyze the stability of the nanoribbon. Our calculations tell us that the passivated nanoribbons have the positive binding energies, which indicates the passivated nanoribbons are relative stable and hydrogenation can improve the stability of the bare nanoribbons due to the reduction of the dangling bonds. Among of them, full hydrogenation has the highest stability. We find all the nanoribbons with full and without hydrogenation are nonmagnetic semiconductors. It is worth mentioning that hydrogenation can induce the bare nanoribbons to transform gradually from indirect band gap semiconductor to direct band gap semiconductor, even to half-metal. In addition, the magnetic moment of the bare nanoribbon change bit by bit as the rate of hydrogenation increases. When the edge atoms are fully hydrogenated, the magnetic moment return to zero. What's more, our research results still confirm that electronic and magnetic properties of the nanorribons without and with different edge passivation are mainly contributed by the atoms at the edges. These studies about MoSe2 nanoribbons will shed light on the further development of the relevant nanodevices in versatile applications, such as spintronics and energy harvesting.

Band structure engineering and vacancy induced metallicity at the GaAs-AlAs interface

KAUST Repository

Upadhyay Kahaly, M.

2011-09-20

We study the epitaxial GaAs-AlAs interface of wide gap materials by full-potential density functional theory. AlAsthin films on a GaAs substrate and GaAsthin films on an AlAs substrate show different trends for the electronic band gap with increasing film thickness. In both cases, we find an insulating state at the interface and a negligible charge transfer even after relaxation. Differences in the valence and conduction band edges suggest that the energy band discontinuities depend on the growth sequence. Introduction of As vacancies near the interface induces metallicity, which opens great potential for GaAs-AlAs heterostructures in modern electronics.

Fabrication of antenna-coupled transition edge polarization-sensitive bolometer arrays

International Nuclear Information System (INIS)

Yun, Minhee; Bock, James; Leduc, Henry; Day, Peter; Kim, Moon J.

2004-01-01

We have fabricated antenna-coupled superconducting transition edge sensor (TES) arrays for far-infrared and millimeter-wave applications. The advantage of antenna coupling is that the large optical coupling structure required for far-infrared/millimeter wavelengths is not thermally active. The sensor can thus be as small as lithographic techniques permit. By eliminating large absorbers, this technology enables bolometers working at frequencies as low as 30 GHz, covering the entire spectral region of interest for future space-borne studies of cosmic microwave background polarization. We developed a focal plane architecture with dual-polarization sensitivity in a single spectral band, or single-polarization sensitivity in multiple spectral bands. We use TES layers consisting of Al/Ti/Au/Ti thin films and Nb electrical contacts on a low-stress Si 3 N 4 membrane

Evaluation of edge enhancement effect of phase contrast imaging using newly-developed photostimulable phosphor plate

International Nuclear Information System (INIS)

Matsuo, Satoru; Morishita, Junji; Katafuchi, Tetsuro; Fujita, Hiroshi

2012-01-01

We investigated whether the use of a newly developed columnar-crystal-type photostimulable-phosphor plate (CP1M200, referred to as system C) helps to provide improved edge-enhanced effect in phase contrast imaging. Physical characteristics of 2 conventional particulate-crystal-type photostimulable-phosphor plates (RP-5PM, referred to as system A and RP-6M, referred to as system B) and system C were measured. Then, an acrylic plate phantom and RMI152 phantom were imaged using 3 types of plates, and the edge-enhancement effects were evaluated based on the profile curve of the acrylic plate phantom. Visual evaluation of the RMI152 phantom images was conducted. The results showed that the modulation transfer function (MTF) of system C was superior to those of the other systems. The WS of system C was superior to those of the other systems in the low frequency band region, and inferior to those of the other systems in the high frequency band region. The presence of an edge-enhanced image was not detectable in the profile curve of the acrylic plate in system A, although that was shown in systems B and C due to their excellent sharpness. In the visual image evaluation of the RMI152 phantom, image quality of system C was superior to those of the other systems. Phase contrast imaging with a digital detector of a columnar-crystal-type photostimulable-phosphor plate is considered to provide improved edge-enhancement over that of conventional plates. (author)

Layer-dependent band alignment and work function of few-layer phosphorene.

Science.gov (United States)

Cai, Yongqing; Zhang, Gang; Zhang, Yong-Wei

2014-10-20

Using first-principles calculations, we study the electronic properties of few-layer phosphorene focusing on layer-dependent behavior of band gap, work function band alignment and carrier effective mass. It is found that few-layer phosphorene shows a robust direct band gap character, and its band gap decreases with the number of layers following a power law. The work function decreases rapidly from monolayer (5.16 eV) to trilayer (4.56 eV), and then slowly upon further increasing the layer number. Compared to monolayer phosphorene, there is a drastic decrease of hole effective mass along the ridge (zigzag) direction for bilayer phosphorene, indicating a strong interlayer coupling and screening effect. Our study suggests that 1). Few-layer phosphorene with a layer-dependent band gap and a robust direct band gap character is promising for efficient solar energy harvest. 2). Few-layer phosphorene outperforms monolayer counterpart in terms of a lighter carrier effective mass, a higher carrier density and a weaker scattering due to enhanced screening. 3). The layer-dependent band edges and work functions of few-layer phosphorene allow for modification of Schottky barrier with enhanced carrier injection efficiency. It is expected that few-layer phosphorene will present abundant opportunities for a plethora of new electronic applications.

Propagation losses in photonic crystal waveguides: Effects of band tail absorption and waveguide dispersion

DEFF Research Database (Denmark)

Rigal, F.; Joanesarson, Kristoffer Bitsch; Lyasota, A.

2017-01-01

Propagation losses in GaAs-based photonic crystal (PhC) waveguides are evaluated near the semiconductor band-edge by measuring the finesse of corresponding Ln cavities. This approach yields simultaneously the propagation losses and the mode reflectivity at the terminations of the cavities. We dem...

Low-loss transmission band in photonic crystal waveguides with sharp cutoff at a frequency below the bandgap

DEFF Research Database (Denmark)

Krüger, Asger Christian; Zhang, Min; Groothoff, Nathaniel

2011-01-01

We present TE transmission measurements of photonic crystal waveguides with high hole radius to period ratio r/Λ=0.388. This geometry introduces a unique low loss transmission band in addition to the traditional PhC guiding band and very sharp transmission edges for devices with a length of 50 μm...... or longer. Finite difference time domain and plane wave expansion simulations confirm the results and show that the sharpness of the cutoffs can be explained by the spectral shape of the guiding mode in the band diagram....

Experimental and theoretical study of X-ray absorption around the chlorine L edge in vinyl chloride

International Nuclear Information System (INIS)

Kawerk, Elie; Carniato, Stéphane; Iwayama, Hiroshi; Shigemasa, Eiji; Piancastelli, Maria Novella; Wassaf, Joseph; Khoury, Antonio; Simon, Marc

2013-01-01

Highlights: ► We measured the X-ray absorption spectrum of C 2 H 3 Cl around the chlorine L edge. ► Ab-initio calculations of the spectrum shed light on eventual electronic resonances. ► Vibrational substructures for particular core excited states are considered. ► The potential energy surfaces of the core excited electronic states are evaluated. ► Sharp or narrow spectral bands are associated to bound or dissociative surfaces. -- Abstract: We present a combined experimental and theoretical study of the high-resolution chlorine L edge X-ray absorption spectrum in gas-phase vinyl chloride (C 2 H 3 Cl). With the help of ab-initio calculations, we interpret the experimental spectrum and attribute each band to its corresponding electronic transitions terminating at states characterized by an either binding or dissociative potential energy surface (PES). Vibrational substructures in some specific core-excited electronic states are taken into account

Experimental and theoretical study of X-ray absorption around the chlorine L edge in vinyl chloride

Energy Technology Data Exchange (ETDEWEB)

Kawerk, Elie, E-mail: elie.kawerk@etu.upmc.fr [Université Pierre et Marie Curie, Laboratoire de Chimie Physique-Matière et Rayonnement, UMR 7614, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05 (France); Université Libanaise, Faculté des Sciences II Fanar, Laboratoire de Physique Appliquée, 90656 Jdeidet el Metn (Lebanon); Carniato, Stéphane [Université Pierre et Marie Curie, Laboratoire de Chimie Physique-Matière et Rayonnement, UMR 7614, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05 (France); Iwayama, Hiroshi; Shigemasa, Eiji [Ultraviolet Synchrotron Orbital Radiation Facility, Institute for Molecular Science, Okazaki 444-8585 (Japan); Piancastelli, Maria Novella [Université Pierre et Marie Curie, Laboratoire de Chimie Physique-Matière et Rayonnement, UMR 7614, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05 (France); Wassaf, Joseph; Khoury, Antonio [Université Libanaise, Faculté des Sciences II Fanar, Laboratoire de Physique Appliquée, 90656 Jdeidet el Metn (Lebanon); Simon, Marc [Université Pierre et Marie Curie, Laboratoire de Chimie Physique-Matière et Rayonnement, UMR 7614, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05 (France)

2013-02-15

Highlights: ► We measured the X-ray absorption spectrum of C{sub 2}H{sub 3}Cl around the chlorine L edge. ► Ab-initio calculations of the spectrum shed light on eventual electronic resonances. ► Vibrational substructures for particular core excited states are considered. ► The potential energy surfaces of the core excited electronic states are evaluated. ► Sharp or narrow spectral bands are associated to bound or dissociative surfaces. -- Abstract: We present a combined experimental and theoretical study of the high-resolution chlorine L edge X-ray absorption spectrum in gas-phase vinyl chloride (C{sub 2}H{sub 3}Cl). With the help of ab-initio calculations, we interpret the experimental spectrum and attribute each band to its corresponding electronic transitions terminating at states characterized by an either binding or dissociative potential energy surface (PES). Vibrational substructures in some specific core-excited electronic states are taken into account.

Topological magnon bands in ferromagnetic star lattice

International Nuclear Information System (INIS)

Owerre, S A

2017-01-01

The experimental observation of topological magnon bands and thermal Hall effect in a kagomé lattice ferromagnet Cu(1–3, bdc) has inspired the search for topological magnon effects in various insulating ferromagnets that lack an inversion center allowing a Dzyaloshinskii–Moriya (DM) spin–orbit interaction. The star lattice (also known as the decorated honeycomb lattice) ferromagnet is an ideal candidate for this purpose because it is a variant of the kagomé lattice with additional links that connect the up-pointing and down-pointing triangles. This gives rise to twice the unit cell of the kagomé lattice, and hence more interesting topological magnon effects. In particular, the triangular bridges on the star lattice can be coupled either ferromagnetically or antiferromagnetically which is not possible on the kagomé lattice ferromagnets. Here, we study DM-induced topological magnon bands, chiral edge modes, and thermal magnon Hall effect on the star lattice ferromagnet in different parameter regimes. The star lattice can also be visualized as the parent material from which topological magnon bands can be realized for the kagomé and honeycomb lattices in some limiting cases. (paper)

Topological magnon bands in ferromagnetic star lattice.

Science.gov (United States)

Owerre, S A

2017-05-10

The experimental observation of topological magnon bands and thermal Hall effect in a kagomé lattice ferromagnet Cu(1-3, bdc) has inspired the search for topological magnon effects in various insulating ferromagnets that lack an inversion center allowing a Dzyaloshinskii-Moriya (DM) spin-orbit interaction. The star lattice (also known as the decorated honeycomb lattice) ferromagnet is an ideal candidate for this purpose because it is a variant of the kagomé lattice with additional links that connect the up-pointing and down-pointing triangles. This gives rise to twice the unit cell of the kagomé lattice, and hence more interesting topological magnon effects. In particular, the triangular bridges on the star lattice can be coupled either ferromagnetically or antiferromagnetically which is not possible on the kagomé lattice ferromagnets. Here, we study DM-induced topological magnon bands, chiral edge modes, and thermal magnon Hall effect on the star lattice ferromagnet in different parameter regimes. The star lattice can also be visualized as the parent material from which topological magnon bands can be realized for the kagomé and honeycomb lattices in some limiting cases.

Transaortic Alfieri Edge-to-Edge Repair for Functional Mitral Regurgitation.

Science.gov (United States)

Imasaka, Ken-Ichi; Tayama, Eiki; Morita, Shigeki; Toriya, Ryohei; Tomita, Yukihiro

2018-03-01

There is controversy about handling functional mitral regurgitation in patients undergoing aortic valve or proximal aortic operations. We describe a transaortic Alfieri edge-to-edge repair for functional mitral regurgitation that reduces operative excessive invasion and prolonged cardiopulmonary bypass time. Between May 2013 and December 2016, 10 patients underwent transaortic Alfieri edge-to-edge mitral repair. There were no operative deaths. The severity of mitral regurgitation immediately after the operation by transesophageal echocardiography was none or trivial in all patients. A transaortic Alfieri edge-to-edge repair for functional mitral regurgitation is a simple and safe approach. Copyright © 2018 The Society of Thoracic Surgeons. Published by Elsevier Inc. All rights reserved.

Wideband Bandpass Filter with High Selectivity and an Adjustable Notched-band Adopting a Multi-mode Resonator

Science.gov (United States)

Ma, Xing-Bing; Jiang, Ting

2018-04-01

A wideband bandpass filter (BPF) with an adjustable notched-band and high selectivity is proposed. The proposed BPF consists of a multi-mode resonator (MMR), two λ/2 resonators, and I/O feed lines with 50 ohm characteristic impedance. The MMR, connected as a whole by a wide stub, is composed of one I-shaped resonator and two open-loop resonators. Tightly coupling is built between MMR and λ/2 resonators. I/O feed lines are directly connected with two λ/2 resonators, respectively. Due to the use of tapped-line coupling, one transmission zero (TZ) is formed near low-edge of aim passband. High-edge of passband with one attendant TZ can be tuned to desired location by adjusting bottom-side position of used wide stub or bottom-side length of I-shaped resonator in MMR. The top-side length of I-shaped resonator is applied to improve upper stopband performance and shift undesired resonant mode of MMR near high-edge of aim passband to proper frequency point. The notched-band in aim passband is dominated by top-side position of wide stub in MMR. Good agreement is observed between simulated and measured results.

Edge passivation induced single-edge ferromagnetism of zigzag MoS_2 nanoribbons

International Nuclear Information System (INIS)

Wang, Rui; Sun, Hui; Ma, Ben; Hu, Jingguo; Pan, Jing

2017-01-01

We performed density functional theory study on electronic structure, magnetic properties and stability of zigzag MoS_2 nanoribbons (ZMoS_2NRs) with and without oxygen (O) passivation. The bare ZMoS_2NRs are magnetic metal with ferromagnetic edge states, edge passivation decreases their magnetism because of the decrease of edge unsaturated electrons. Obviously, the electronic structure and magnetic properties of ZMoS_2NRs greatly depend on edge states. When both edges are passivated by O atoms, ZMoS_2NRs are nonmagnetic metals. When either edge is passivated by O atoms, the systems exhibit single-edge ferromagnetism and magnetism concentrates on the non-passivated edge. Edge passivation can not only tune the magnetism of ZMoS_2NRs, but also enhance their stability by eliminating dangling bonds. These interesting findings on ZMoS_2NRs may open the possibility of their application in nanodevices and spintronics. - Highlights: • Edge passivation for tuning magnetism of zigzag MoS_2 nanoribbons (ZMoS_2NRs) is proposed. • Edge passivation can tune ZMoS_2NRs from nonmagnetic metal to ferromagnetic metal. • When either edge is passivated, the systems exhibit single-edge ferromagnetic states. • These findings may inspire great interest in the community of ZMoS_2NRs and motivate numerous experimental researches.

Atomic scattering factor of the ASTRO-H (Hitomi) SXT reflector around the gold's L edges

DEFF Research Database (Denmark)

Kikuchi, Naomichi; Kurashima, Sho; Ishida, Manabu

2016-01-01

The atomic scattering factor in the energy range of 11.2-15.4 keV for the ASTRO-H Soft X-ray Telescope (SXT) is reported. The large effective area of the SXT makes use of photon spectra above 10 keV viable, unlike most other X-ray satellites with total-reflection mirror optics. Presence of gold's L-edges...... in the energy band is a major issue, as it complicates the function of the effective area. In order to model the area, the reflectivity measurements in the 11.2-15.4 keV band with the energy pitch of 0.4-0.7 eV were made in the synchrotron beamline Spring-8 BL01B1. We obtained atomic scattering factors f1 and f......2 by the curve fitting to the reflectivities of our witness sample. The edges associated with the L-I, II, and III transitions are identified, of which the depths are found to be roughly 60% shallower than those expected from the Henke's atomic scattering factor....

Transient Global Amnesia Deteriorates the Network Efficiency of the Theta Band.

Directory of Open Access Journals (Sweden)

Young Ho Park

Full Text Available Acute perturbation of the hippocampus, one of the connector hubs in the brain, is a key step in the pathophysiological cascade of transient global amnesia (TGA. We tested the hypothesis that network efficiency, meaning the efficiency of information exchange over a network, is impaired during the acute stage of TGA. Graph theoretical analysis was applied to resting-state EEG data collected from 21 patients with TGA. The EEG data were obtained twice, once during the acute stage ( 2 months after symptom onset of TGA. Characteristic path lengths and clustering coefficients of functional networks constructed using phase-locking values were computed and normalized as a function of the degree in the delta, theta, alpha, beta 1, beta 2 and gamma frequency bands of the EEG. We investigated whether the normalized characteristic path length (nCPL and normalized clustering coefficients (nCC differed significantly between the acute and resolved stages of TGA at each frequency band using the Wilcoxon signed-rank test. For networks where the nCPL or nCC differed significantly between the two stages, we also evaluated changes in the connections of the brain networks. During the acute stage of TGA, the nCPL of the theta band networks with mean degrees of 8, 8.5, 9 and 9.5 significantly increased (P < 0.05. During the acute stage, the lost edges for these networks were mostly found between the anterior (frontal and anterior temporal and posterior (parieto-occipital and posterior temporal brain regions, whereas newly developed edges were primarily found between the left and right frontotemporal regions. The nCC of the theta band with a mean degree of 5.5 significantly decreased during the acute stage (P < 0.05. Our results indicate that TGA deteriorates the network efficiency of the theta frequency band. This effect might be related to the desynchronization between the anterior and posterior brain areas.

Band Structure Analysis of La0.7Sr0.3MnO3 Perovskite Manganite Using a Synchrotron

Directory of Open Access Journals (Sweden)

Hong-Sub Lee

2015-01-01

Full Text Available Oxide semiconductors and their application in next-generation devices have received a great deal of attention due to their various optical, electric, and magnetic properties. For various applications, an understanding of these properties and their mechanisms is also very important. Various characteristics of these oxides originate from the band structure. In this study, we introduce a band structure analysis technique using a soft X-ray energy source to study a La0.7Sr0.3MnO3 (LSMO oxide semiconductor. The band structure is formed by a valence band, conduction band, band gap, work function, and electron affinity. These can be determined from secondary electron cut-off, valence band spectrum, O 1s core electron, and O K-edge measurements using synchrotron radiation. A detailed analysis of the band structure of the LSMO perovskite manganite oxide semiconductor thin film was established using these techniques.

Unified bulk-boundary correspondence for band insulators

Science.gov (United States)

Rhim, Jun-Won; Bardarson, Jens H.; Slager, Robert-Jan

2018-03-01

The bulk-boundary correspondence, a topic of intensive research interest over the past decades, is one of the quintessential ideas in the physics of topological quantum matter. Nevertheless, it has not been proven in all generality and has in certain scenarios even been shown to fail, depending on the boundary profiles of the terminated system. Here, we introduce bulk numbers that capture the exact number of in-gap modes, without any such subtleties in one spatial dimension. Similarly, based on these 1D bulk numbers, we define a new 2D winding number, which we call the pole winding number, that specifies the number of robust metallic surface bands in the gap as well as their topological character. The underlying general methodology relies on a simple continuous extrapolation from the bulk to the boundary, while tracking the evolution of Green's function's poles in the vicinity of the bulk band edges. As a main result we find that all the obtained numbers can be applied to the known insulating phases in a unified manner regardless of the specific symmetries. Additionally, from a computational point of view, these numbers can be effectively evaluated without any gauge fixing problems. In particular, we directly apply our bulk-boundary correspondence construction to various systems, including 1D examples without a traditional bulk-boundary correspondence, and predict the existence of boundary modes on various experimentally studied graphene edges, such as open boundaries and grain boundaries. Finally, we sketch the 3D generalization of the pole winding number by in the context of topological insulators.

Two-band model with off-diagonal occupation dependent hopping rate

International Nuclear Information System (INIS)

Zawadowski, A.

1989-01-01

In this paper two-band hopping model is treated on a two-dimensional square lattice. The atoms are located at the corners and the middles of the edges of the squares. In addition to the strongly overlapping orbitals of the atoms, there are extra orbitals at the corners, which are weakly hybridized. The assumption is made that the Fermi level is inside the broad band and is every near to the narrow band formed by the extra orbitals. The hamiltonian is Hubbard type, but the off-diagonal part of the two-site interaction t is kept also where one creation or annihilation operator acts on the extra orbital and the others on one of its neighbors. The weak coupling t is enhanced by the on-site Coulomb repulsion at the corners, which enhancement is a power function of the ratio of the broad band width and the narrow bank position measured from the Fermi level. That enhancement is obtained by summation of logarithmic Kondo-type corrections of orbital origin, which reflects the formation of a ground state of new type with strong orbital and spin correlations. Interaction between the particles of the broad band is generated by processes with one heavy and one light particle in the intermediate state

Contribution of the New WORLDVIEW-2 Spectral Bands for Urban Mapping in Coastal Areas: Case Study SÃO LUÍS ( MARANHÃO State, Brazil)

Science.gov (United States)

Souza, U. D. V.; kux, H. J. H.

2012-07-01

The objective of this study is to verify the contribution of the spectral bands from the new WorldView-2 satellite for the extraction of urban targets aiming a detailed mapping from the city of São Luis, at the coastal zone of Maranhão State, Brazil. This satellite system has 3 bands in the visible portion of the spectrum and also the following 4 new bands: Coastal (400-450 nm), Yellow (585- 625 nm), Red Edge (705-745 nm), and Near Infrared 2 (860-1040 nm). As for the methodology used, initially a fusion was made among the panchromatic and the multispectral bands, combining the spectral information of the multispectral bands with the geometric information of the panchromatic band. Following the ortho-rectification of the dataset was done, using ground control points (GCPs) obtained during field survey. The classification reached high values of Kappa indices. The use of the new bands Red Edge and Near Infrared 2, allowed the improvement of discriminations at tidal flats, mangrove and other vegetation types. The Yellow band improved the discrimination of bare soils - very important information for urban planning - and ceramic roofs. The Coastal band allowed to map the tidal channels which cross the urban area of São Luis, a typical feature of this coastal area. The functionalities of software GEODMA used, allowed an efficient attribute selection which improved the land cover classification from the test sites. The new WorldView-2 bands permit the identification and extraction of the features mentioned, because these bands are positioned at important parts of the electromagnetic spectrum, such as band Red Edge, which strongly improves the discrimination of vegetation conditions. Combining both higher spatial and spectral resolutions, WorldView-2 data allows an improvement on the discrimination of physical characteristics of the targets of interest, thus permitting a higher precision of land use/land cover maps, contributing to urban planning. The test sites of this

Linear analysis of an X-band backward wave oscillator with a circular-edge disk-loaded cylindrical waveguide driven by an annular electron beam

Science.gov (United States)

Hasan Sagor, Rakibul; Ruhul Amin, Md.

2017-10-01

An X-band backward wave oscillator (BWO) with a circular-edge disk-loaded periodic metallic slow wave structure (CDSWS) is proposed and studied numerically. The structure is the modified version of our previously modeled semi-circularly corrugated slow wave structure (SCCSWS). The CDSWS is energized by an intense relativistic electron beam (IREB) which is directed by a strong magnetic field. The electromagnetic (EM) wave of the slow wave structure (SWS) merges with the space charge wave of the beam under the guidance of the strong axial magnetic field. The inner wall contour of CDSWS is modeled by a finite Fourier series and the dispersion characteristics of different TM modes are solved by utilizing the linear Rayleigh-Fourier (R-F) technique, which is verified by a commercial EM solver. To study the temporal growth rate (TGR) for the fundamental TM01 mode, the dispersion equation is solved for the beam current of 0.1-1.0kA and the beam energy of 205-665kV. For the TM01 mode, the TGR that occurs at the unstable region, which provides a qualitative index of the strength of the microwave generation, is compared with those of the BWOs with sinusoidally corrugated SWS (SCSWS), disk-loaded SWS (DLSWS) and triangularly corrugated SWS (TrCSWS) for different beam parameters. The dimension of the CDSWS is determined by comparing the dispersion characteristics of fundamental TM01 mode with DLSWS and SCSWS. For the same set of beam parameters, an average of 3.5%, 7%, 1.5% and more than 50% higher TGR have been obtained with the proposed CDSWS than that of SCSWS, DLSWS, TrCSWS and SCCSWS respectively. Moreover, the presented structure also provides an advantage in the fabrication process and is less prone to RF breakdown since it has no sharp edges in the inner wall where the electric field intensity can be infinitely high.

Design of UWB Monopole Antenna with Dual Notched Bands Using One Modified Electromagnetic-Bandgap Structure

Science.gov (United States)

Xu, Ziqiang

2013-01-01

A modified electromagnetic-bandgap (M-EBG) structure and its application to planar monopole ultra-wideband (UWB) antenna are presented. The proposed M-EBG which comprises two strip patch and an edge-located via can perform dual notched bands. By properly designing and placing strip patch near the feedline, the proposed M-EBG not only possesses a simple structure and compact size but also exhibits good band rejection. Moreover, it is easy to tune the dual notched bands by altering the dimensions of the M-EBG. A demonstration antenna with dual band-notched characteristics is designed and fabricated to validate the proposed method. The results show that the proposed antenna can satisfy the requirements of VSWR WLAN) at 3.5 GHz and 5.5 GHz, respectively. PMID:24170984

Optical study of the band structure of wurtzite GaP nanowires

KAUST Repository

Assali, S.

2016-07-25

We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.

Optical study of the band structure of wurtzite GaP nanowires

KAUST Repository

Assali, S.; Greil, J.; Zardo, I.; Belabbes, Abderrezak; de Moor, M. W. A.; Koelling, S.; Koenraad, P. M.; Bechstedt, F.; Bakkers, E. P. A. M.; Haverkort, J. E. M.

2016-01-01

We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.

On the theory of improved confinement due to stationary multifaceted asymmetric radiation from the edge

International Nuclear Information System (INIS)

Herrera, J.J.E.

2002-01-01

Multifaceted asymmetric radiation from the edge (MARFE's) are toroidally symmetric and poloidally asymmetric radiation bands that occur in tokamaks as a result of a thermal instability, originated by radiation losses. It was observed in TFTR and TEXTOR that they formed as density was increased, and impurities concentrated on the edge. Under certain circumstances, they could evolve into weakly poloidal symmetric structures that cooled the edge of the plasma to a few tens of eV, thus leading to detachment from the limiter. Although non-stationary MARFE's are often precursors of disruptions, the use of a stochastic divertor in TORE-SUPRA, and of feedback controlled gas-puff in HT-7 have proved the existence of stationary MARFE's. Their appearance has been found to depend strongly on the impurity content of the plasma. They trigger internal transport barriers, observed in the electron temperature profiles. The purpose of this work is: to take into account the edge control in order to understand the sustainment of stationary MARFE's, and to propose non-local mechanisms that can explain the formation of internal transport barriers. (author)

Fundamental optical absorption edge in MnGa2Te4 single crystals

International Nuclear Information System (INIS)

Medvedkin, G.A.; Rud, Yu.V.; Tairov, M.A.

1988-01-01

A study is made of the optical properties of oriented MnGa 2 Te 4 crystals in the region of the fundamental absorption edge. The energy gap width for the temperatures 77, 300, and 370 K is determined to be E G = 1.635, 1.52, and 1.50 eV. The spectral response α(ℎω/2π) is found to follow Urbach's rule thoughout the temperature range studied, the slope of the absorption edge remaining constant (α = 10 2 cm -1 ). Crystal annealing with subsequent rapid cooling results in a shift of the absorption edge longward by 25 meV with the exponential form of α(ℎω/2π) prevailing over the range T = 77 to 370 K. An analysis shows the optical absorption in the region of the fundamental edge to be a sum of the effects coming from the density-of-states tails, local scattering centers associated with a high vacancy concentration, and electron-phonon interaction. Optical linear dichroism of the absorption edge of MnGa 2 Te 4 single crystals with pseudotetragonal structure is revealed and studied. The single crystals are established to be optically uniaxial, their optical transmission dichroism being negative. It is shown that the minimal direct optical transitions in MnGa 2 Te 4 are allowed in the E parallel c polarization in the temperature range 77 to 370 K, the crystal-field splitting of the valence band increasing with temperature. (author)

Absolute band structure determination on naturally occurring rutile with complex chemistry: Implications for mineral photocatalysis on both Earth and Mars

Science.gov (United States)

Li, Yan; Xu, Xiaoming; Li, Yanzhang; Ding, Cong; Wu, Jing; Lu, Anhuai; Ding, Hongrui; Qin, Shan; Wang, Changqiu

2018-05-01

Rutile is the most common and stable form of TiO2 that ubiquitously existing on Earth and other terrestrial planets like Mars. Semiconducting mineral such as rutile-based photoredox reactions have been considered to play important roles in geological times. However, due to the inherent complexity in chemistry, the precision determination on band structure of natural rutile and the theoretical explanation on its solar-driven photochemistry have been hardly seen yet. Considering the multiple minor and trace elements in natural rutile, we firstly obtained the single-crystal crystallography, mineralogical composition and defects characteristic of the rutile sample by using both powder and single crystal X-ray diffraction, electron microprobe analysis and X-ray photoelectron spectroscopy. Then, the band gap was accurately determined by synchrotron-based O K-edge X-ray absorption and emission spectra, which was firstly applied to natural rutile due to its robustness on compositions and defects. The absolute band edges of the rutile sample was calculated by considering the electronegativity of the atoms, band gap and point of zero charge. Besides, after detecting the defect energy levels by photoluminescence spectra, we drew the schematic band structure of natural rutile. The band gap (2.7 eV) of natural rutile was narrower than that of synthetic rutile (3.0 eV), and the conduction and valence band edges of natural rutile at pH = pHPZC were determined to be -0.04 V and 2.66 V (vs. NHE), respectively. The defect energy levels located at nearly the middle position of the forbidden band. Further, we used theoretical calculations to verify the isomorphous substitution of Fe and V for Ti gave rise to the distortion of TiO6 octahedron and created vacancy defects in natural rutile. Based on density functional theory, the narrowed band gap was interpreted to the contribution of Fe-3d and V-3d orbits, and the defect energy state was formed by hybridization of O-2p and Fe/V/Ti-3d

Observation of the exciton and Urbach band tail in low-temperature-grown GaAs using four-wave mixing spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Webber, D.; Yildirim, M.; Hacquebard, L.; March, S.; Mathew, R.; Gamouras, A.; Hall, K. C. [Department of Physics and Atmospheric Science, Dalhousie University, Halifax, Nova Scotia B3H 4R2 (Canada); Liu, X.; Dobrowolska, M.; Furdyna, J. K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2014-11-03

Four-wave mixing (FWM) spectroscopy reveals clear signatures associated with the exciton, free carrier inter-band transitions, and the Urbach band tail in low-temperature-grown GaAs, providing a direct measure of the effective band gap as well as insight into the influence of disorder on the electronic structure. The ability to detect (and resolve) these contributions, in contrast to linear spectroscopy, is due to an enhanced sensitivity of FWM to the optical joint density of states and to many-body effects. Our experiments demonstrate the power of FWM for studying the near-band-edge optical properties and coherent carrier dynamics in low-temperature-grown semiconductors.

Wave propagation in ordered, disordered, and nonlinear photonic band gap materials

Energy Technology Data Exchange (ETDEWEB)

Lidorikis, Elefterios [Iowa State Univ., Ames, IA (United States)

1999-12-10

Photonic band gap materials are artificial dielectric structures that give the promise of molding and controlling the flow of optical light the same way semiconductors mold and control the electric current flow. In this dissertation the author studied two areas of photonic band gap materials. The first area is focused on the properties of one-dimensional PBG materials doped with Kerr-type nonlinear material, while, the second area is focused on the mechanisms responsible for the gap formation as well as other properties of two-dimensional PBG materials. He first studied, in Chapter 2, the general adequacy of an approximate structure model in which the nonlinearity is assumed to be concentrated in equally-spaced very thin layers, or 6-functions, while the rest of the space is linear. This model had been used before, but its range of validity and the physical reasons for its limitations were not quite clear yet. He performed an extensive examination of many aspects of the model's nonlinear response and comparison against more realistic models with finite-width nonlinear layers, and found that the d-function model is quite adequate, capturing the essential features in the transmission characteristics. The author found one exception, coming from the deficiency of processing a rigid bottom band edge, i.e. the upper edge of the gaps is always independent of the refraction index contrast. This causes the model to miss-predict that there are no soliton solutions for a positive Kerr-coefficient, something known to be untrue.

Demosaicking for full motion video 9-band SWIR sensor

Science.gov (United States)

Kanaev, Andrey V.; Rawhouser, Marjorie; Kutteruf, Mary R.; Yetzbacher, Michael K.; DePrenger, Michael J.; Novak, Kyle M.; Miller, Corey A.; Miller, Christopher W.

2014-05-01

Short wave infrared (SWIR) spectral imaging systems are vital for Intelligence, Surveillance, and Reconnaissance (ISR) applications because of their abilities to autonomously detect targets and classify materials. Typically the spectral imagers are incapable of providing Full Motion Video (FMV) because of their reliance on line scanning. We enable FMV capability for a SWIR multi-spectral camera by creating a repeating pattern of 3x3 spectral filters on a staring focal plane array (FPA). In this paper we present the imagery from an FMV SWIR camera with nine discrete bands and discuss image processing algorithms necessary for its operation. The main task of image processing in this case is demosaicking of the spectral bands i.e. reconstructing full spectral images with original FPA resolution from spatially subsampled and incomplete spectral data acquired with the choice of filter array pattern. To the best of author's knowledge, the demosaicking algorithms for nine or more equally sampled bands have not been reported before. Moreover all existing algorithms developed for demosaicking visible color filter arrays with less than nine colors assume either certain relationship between the visible colors, which are not valid for SWIR imaging, or presence of one color band with higher sampling rate compared to the rest of the bands, which does not conform to our spectral filter pattern. We will discuss and present results for two novel approaches to demosaicking: interpolation using multi-band edge information and application of multi-frame super-resolution to a single frame resolution enhancement of multi-spectral spatially multiplexed images.

Relativistic Band Calculation and the Optical Properties of Gold

DEFF Research Database (Denmark)

Christensen, N Egede; Seraphin, B. O.

1971-01-01

of magnitude as the gaps (approximately 1 eV). Various integrated functions, density of states, joint density of states, and energy distributions of joint density of states are derived from the RAPW calculation. These functions are used in an interpretation of photoemission and static reflectance measurements......The energy band structure of gold is calculated by the relativistic augmented-plane-wave (RAPW) method. A nonrelativistic calculation is also presented, and a comparison between this and the RAPW results demonstrates that the shifts and splittings due to relativistic effects are of the same order...... to trace out the regions in k→ space where the edge and tail transitions occur. It is demonstrated that structure in the static reflection curves are not related to critical points in the band structure. The arguments are supported by calculations of temperature shifts of the critical-point energies...

Band structure of a three-dimensional topological insulator quantum wire in the presence of a magnetic field.

Science.gov (United States)

Liu, Zhe; Jiang, Liwei; Zheng, Yisong

2016-07-13

By means of a numerical diagonalization approach, we calculate the electronic structure of a three-dimensional topological insulator (3DTI) quantum wire (QW) in the presence of a magnetic field. The QW can be viewed as a 3DTI film with lateral surfaces, when its rectangular cross section has a large aspect ratio. Our calculation indicates that nonchiral edge states emerge because of the confined states at the lateral surfaces. These states completely cover the valence band region among the Landau levels, which reasonably account for the absence of the [Formula: see text] quantum Hall effect in the relevant experimental works. In an ultrathin 3DTI film, inversion between the electron-type and hole-type bands occurs, which leads to the so-called pseudo-spin Hall effect. In a 3DTI QW with a square cross section, a tilting magnetic field can establish well-defined Landau levels in all four surfaces. In such a case, the quantum Hall edge states are localized at the square corners, characterized by the linearly crossing one-dimensional band profile. And they can be shifted between the adjacent corners by simply rotating the magnetic field.

Design of UWB Monopole Antenna with Dual Notched Bands Using One Modified Electromagnetic-Bandgap Structure

Directory of Open Access Journals (Sweden)

Hao Liu

2013-01-01

Full Text Available A modified electromagnetic-bandgap (M-EBG structure and its application to planar monopole ultra-wideband (UWB antenna are presented. The proposed M-EBG which comprises two strip patch and an edge-located via can perform dual notched bands. By properly designing and placing strip patch near the feedline, the proposed M-EBG not only possesses a simple structure and compact size but also exhibits good band rejection. Moreover, it is easy to tune the dual notched bands by altering the dimensions of the M-EBG. A demonstration antenna with dual band-notched characteristics is designed and fabricated to validate the proposed method. The results show that the proposed antenna can satisfy the requirements of VSWR < 2 over UWB 3.1–10.6 GHz, except for the rejected bands of the world interoperability for microwave access (WiMAX and the wireless local area network (WLAN at 3.5 GHz and 5.5 GHz, respectively.

Elastically Deformable Side-Edge Link for Trailing-Edge Flap Aeroacoustic Noise Reduction

Science.gov (United States)

Khorrami, Mehdi R. (Inventor); Lockard, David P. (Inventor); Moore, James B. (Inventor); Su, Ji (Inventor); Turner, Travis L. (Inventor); Lin, John C. (Inventor); Taminger, Karen M. (Inventor); Kahng, Seun K. (Inventor); Verden, Scott A. (Inventor)

2014-01-01

A system is provided for reducing aeroacoustic noise generated by an aircraft having wings equipped with trailing-edge flaps. The system includes a plurality of elastically deformable structures. Each structure is coupled to and along one of the side edges of one of the trailing-edge flaps, and is coupled to a portion of one of the wings that is adjacent to the one of the side edges. The structures elastically deform when the trailing-edge flaps are deployed away from the wings.

Localized Edge Vibrations and Edge Reconstruction by Joule Heating in Graphene Nanostructures

DEFF Research Database (Denmark)

Engelund, Mads; Fürst, Joachim Alexander; Jauho, Antti-Pekka

2010-01-01

Control of the edge topology of graphene nanostructures is critical to graphene-based electronics. A means of producing atomically smooth zigzag edges using electronic current has recently been demonstrated in experiments [Jia et al., Science 323, 1701 (2009)]. We develop a microscopic theory...... for current-induced edge reconstruction using density functional theory. Our calculations provide evidence for localized vibrations at edge interfaces involving unpassivated armchair edges. We demonstrate that these vibrations couple to the current, estimate their excitation by Joule heating, and argue...

Time-Resolved K-shell Photoabsorption Edge Measurement in a Strongly Coupled Matter Driven by Laser-converted Radiation

Science.gov (United States)

Zhao, Yang; Yang, Jia-Min; Zhang, Ji-Yan; Yang, Guo-Hong; Xiong, Gang; Wei, Min-Xi; Song, Tian-Ming; Zhang, Zhi-Yu

2013-06-01

A time-resolved K edge absorption measurement of warm dense KCl was performed on Shenguang II laser facility. The x-ray radiation driven shocks were adopted to take colliding shocks compression. By using Dog bone hohlraum the CH/KCl/CH sample was shielded from the laser hitting point to suppress the M band preheating and enhance the compressibility. Thus, an unexplored and extreme region of the plasma state with the maximum 5 times solid density and temperature lower than 3 eV (with coupling constant Γii around 100) was first obtained. The photoabsorption spectra of chlorine near the K-shell edge have been measured with a crystal spectrometer using a short x-ray backlighter. The K edge red shift up to 11.7 eV and broadening of 15.2 eV were obtained for the maximum compression. The electron temperature, inferred by Fermi-Dirac fit of the measured K-edge broadening, was consistent with the hydrodynamic predictions. The comparison of the K edge shift with a plasma model, in which the ionization effect, continuum lowering and partial degeneracy are considered, shows that more improvements are desired to describe in details the variation of K edge shift. This work might extend future study of WDM in extreme conditions of high compression.

Spontaneous emission spectrum from a V-type three-level atom in a double-band photonic crystal

International Nuclear Information System (INIS)

Zhang Han Zhuang; Tang Sing Hai; Dong Po; He Jun

2002-01-01

The spontaneous emission spectrum from a V-type three-level atom embedded in a double-band photonic band gap (PBG) material has been investigated for the first time. Most interestingly it is shown that there is not only a black dark line, but also a narrow spontaneous line near the edges of the double photonic band. The positions of the dark line and narrow spontaneous line are near the transition from an empty upper level to a lower level. The lines stem from destructive and constructive quantum interferences, which induce population transfer between the two upper levels, in the PBG reservoirs. The effects of system parameters on the interference have been discussed in detail

An Econometric Diffusion Model of Exchange Rate Movements within a Band - Implications for Interest Rate Differential and Credibility of Exchange Rate Policy

OpenAIRE

Rantala, Olavi

1992-01-01

The paper presents a model ofexchange rate movements within a specified exchange rate band enforced by central bank interventions. The model is based on the empirical observation that the exchange rate has usually been strictly inside the band, at least in Finland. In this model the distribution of the exchange rate is truncated lognormal from the edges towards the center of the band and hence quite different from the bimodal distribution of the standard target zone model. The model is estima...

Reduction of airfoil trailing edge noise by trailing edge blowing

International Nuclear Information System (INIS)

Gerhard, T; Carolus, T; Erbslöh, S

2014-01-01

The paper deals with airfoil trailing edge noise and its reduction by trailing edge blowing. A Somers S834 airfoil section which originally was designed for small wind turbines is investigated. To mimic realistic Reynolds numbers the boundary layer is tripped on pressure and suction side. The chordwise position of the blowing slot is varied. The acoustic sources, i.e. the unsteady flow quantities in the turbulent boundary layer in the vicinity of the trailing edge, are quantified for the airfoil without and with trailing edge blowing by means of a large eddy simulation and complementary measurements. Eventually the far field airfoil noise is measured by a two-microphone filtering and correlation and a 40 microphone array technique. Both, LES-prediction and measurements showed that a suitable blowing jet on the airfoil suction side is able to reduce significantly the turbulence intensity and the induced surface pressure fluctuations in the trailing edge region. As a consequence, trailing edge noise associated with a spectral hump around 500 Hz could be reduced by 3 dB. For that a jet velocity of 50% of the free field velocity was sufficient. The most favourable slot position was at 90% chord length

AlxGa1--xN/GaN band offsets determined by deep-level emission

International Nuclear Information System (INIS)

Hang, D. R.; Chen, C. H.; Chen, Y. F.; Jiang, H. X.; Lin, J. Y.

2001-01-01

We present studies of the compositional dependence of the optical properties of Al x Ga 1-x N(0 x Ga 1-x N. As aluminum concentration increases, the color of the band changes from yellow (2.2 eV) to blue (2.6 eV). The shift was less than that of the band gap. Together with previously published studies, it implies that the deep acceptor level is pinned to a common reference level to both materials, thus the deep level responsible for the yellow emission is used as a common reference level to determine the band alignment in Al x Ga 1-x N/GaN heterojunctions. Combining with the near-band-edge modulation spectra, the estimated ratio of conduction-to-valence band discontinuity is 65:35. Our results are close to the values obtained from PL measurements on Al 0.14 Ga 0.86 N/GaN quantum wells and those calculated by linear muffin-tin orbital method and linearized augmented plane wave method. copyright 2001 American Institute of Physics

Nonreciprocity of edge modes in 1D magnonic crystal

International Nuclear Information System (INIS)

Lisenkov, I.; Kalyabin, D.; Osokin, S.; Klos, J.W.; Krawczyk, M.; Nikitov, S.

2015-01-01

Spin waves propagation in 1D magnonic crystals is investigated theoretically. Mathematical model based on plane wave expansion method is applied to different types of magnonic crystals, namely bi-component magnonic crystal with symmetric/asymmetric boundaries and ferromagnetic film with periodically corrugated top surface. It is shown that edge modes in magnonic crystals may exhibit nonreciprocal behaviour at much lower frequencies than in homogeneous films. - Highlights: • Magnetostatic surface spin waves in 1D magnonic crystals were studied theoretically. • Mathematical model is based on plane wave method. • Mathematical model was applied to different types of magnonic crystals. • Stop band formation and nonreciprocity were obtained

Edge printability: techniques used to evaluate and improve extreme wafer edge printability

Science.gov (United States)

Roberts, Bill; Demmert, Cort; Jekauc, Igor; Tiffany, Jason P.

2004-05-01

The economics of semiconductor manufacturing have forced process engineers to develop techniques to increase wafer yield. Improvements in process controls and uniformities in all areas of the fab have reduced film thickness variations at the very edge of the wafer surface. This improved uniformity has provided the opportunity to consider decreasing edge exclusions, and now the outermost extents of the wafer must be considered in the yield model and expectations. These changes have increased the requirements on lithography to improve wafer edge printability in areas that previously were not even coated. This has taxed all software and hardware components used in defining the optical focal plane at the wafer edge. We have explored techniques to determine the capabilities of extreme wafer edge printability and the components of the systems that influence this printability. We will present current capabilities and new detection techniques and the influence that the individual hardware and software components have on edge printability. We will show effects of focus sensor designs, wafer layout, utilization of dummy edge fields, the use of non-zero overlay targets and chemical/optical edge bead optimization.

Edge enhancement improves disruptive camouflage by emphasising false edges and creating pictorial relief.

Science.gov (United States)

Egan, John; Sharman, Rebecca J; Scott-Brown, Kenneth C; Lovell, Paul George

2016-12-06

Disruptive colouration is a visual camouflage composed of false edges and boundaries. Many disruptively camouflaged animals feature enhanced edges; light patches are surrounded by a lighter outline and/or a dark patches are surrounded by a darker outline. This camouflage is particularly common in amphibians, reptiles and lepidopterans. We explored the role that this pattern has in creating effective camouflage. In a visual search task utilising an ultra-large display area mimicking search tasks that might be found in nature, edge enhanced disruptive camouflage increases crypsis, even on substrates that do not provide an obvious visual match. Specifically, edge enhanced camouflage is effective on backgrounds both with and without shadows; i.e. this is not solely due to background matching of the dark edge enhancement element with the shadows. Furthermore, when the dark component of the edge enhancement is omitted the camouflage still provided better crypsis than control patterns without edge enhancement. This kind of edge enhancement improved camouflage on all background types. Lastly, we show that edge enhancement can create a perception of multiple surfaces. We conclude that edge enhancement increases the effectiveness of disruptive camouflage through mechanisms that may include the improved disruption of the object outline by implying pictorial relief.

First-principles study of direct and narrow band gap semiconducting β-CuGaO2

International Nuclear Information System (INIS)

Nguyen, Manh Cuong; Zhao, Xin; Wang, Cai-Zhuang; Ho, Kai-Ming

2015-01-01

Semiconducting oxides have attracted much attention due to their great stability in air or water and the abundance of oxygen. Recent success in synthesizing a metastable phase of CuGaO 2 with direct narrow band gap opens up new applications of semiconducting oxides as absorber layer for photovoltaics. Using first-principles density functional theory calculations, we investigate the thermodynamic and mechanical stabilities as well as the structural and electronic properties of the β-CuGaO 2 phase. Our calculations show that the β-CuGaO 2 structure is dynamically and mechanically stable. The energy band gap is confirmed to be direct at the Γ point of Brillouin zone. The optical absorption occurs right at the band gap edge and the density of states near the valance band maximum is large, inducing an intense absorption of light as observed in experiment. (paper)

Design of Ka-band antipodal finline mixer and detector

International Nuclear Information System (INIS)

Yao Changfei; Xu Jinping; Chen Mo

2009-01-01

This paper mainly discusses the analysis and design of a finline single-ended mixer and detector. In the circuit, for the purpose of eliminating high-order resonant modes and improving transition loss, metallic via holes are implemented along the mounting edge of the substrate embedded in the split-block of the WG-finline-microstrip transition. Meanwhile, a Ka band slow-wave and bandstop filter, which represents a reactive termination, is designed for the utilization of idle frequencies and operation frequencies energy. Full-wave analysis is carried out to optimize the input matching network of the mixer and the detector circuit using lumped elements to model the nonlinear diode. The exported S-matrix of the optimized circuit is used for conversion loss and voltage sensitivity analysis. The lowest measured conversion loss is 3.52 dB at 32.2 GHz; the conversion loss is flat and less than 5.68 dB in the frequency band of 29-34 GHz. The highest measured zero-bias voltage sensitivity is 1450 mV/mW at 38.6 GHz, and the sensitivity is better than 1000 mV/mW in the frequency band of 38-40 GHz.

Edge Matters

DEFF Research Database (Denmark)

Earon, Ofri

2013-01-01

of this container is to separate inside from outside and to protect and provide privacy, psychological as well as physical (Venturi, 1966). But, if dwelling phenomenon takes place both inside and outside the private house – why is the urban house an enclosed box? What is the differentiation between inside...... and outside the contemporary urban house? And what is the interplay between them? The research argues for re-thinking the edge zone between inside and outside the urban house. Therefore, although, residential buildings in the city are the objects of study, the focal point here is the edge zone along...... the building. The research explores and develops the architectural characteristics of correlations between the resident, the singular unit, the building and the given location at the edge zone. It approaches the edge zone of the urban house as a platform for dynamic interactions between these behaviours...

An edge pedestal model

International Nuclear Information System (INIS)

Stacev, W.M.

2001-01-01

A new model for calculation of the gradient scale lengths in the edge pedestal region and of the edge transport barrier width in H-mode tokamak plasmas will be described. Model problem calculations which demonstrate the promise of this model for predicting experimental pedestal properties will be discussed. The density and Prague gradient scale lengths (L) in the edge are calculated from the particle and ion and electron energy radial transport equations, making use of (presumed) known particle and energy fluxes flowing across the edge transport barrier from the core into the SOL and of edge transport coefficients. The average values of the particle and heat fluxes in the edge transport barrier are calculated in terms of the fluxes crossing into the SOL and the atomic physics reaction rates (ionisation, charge-exchange, elastic scattering, impurity radiation) in the edge by integrating the respective transport equations from the pedestal to the separatrix. An important implication of this model is that the pedestal gradient scale lengths depend not just on local pedestal platers properties but also on particle and energy fluxes from the core plasma and on recycling neutral fluxes that penetrate into the plasma edge, both of which in turn depend on the pedestal properties. The MHD edge pressure gradient constraint α≤ α C is used to determine the pressure width of the edge transport barrier, Δ TB = Δ TB (α c ). Three different models for the MHD edge pressure gradient constraint have been investigated: (1) nominal ideal ballooning mode theory, (2) ballooning mode theory taking into account the edge geometry and shear to access He second stability region; and pedestal β-limit theory when the ballooning modes are stabilised by diamagnetic effects. A series of calculations have been made for a DIII-D model problem. The calculated gradient scale lengths and edge transport barrier widths are of the magnitude of values observed experimentally, and certain trends

Fan-shaped antennas: Realization of wideband characteristics and generation of stop bands

Science.gov (United States)

Nakano, H.; Morishita, K.; Iitsuka, Y.; Mimaki, H.; Yoshida, T.; Yamauchi, J.

2008-08-01

This paper presents four fan-shaped antennas: U.S.-FAN, CROSS-FAN, CROSS-FAN-W, and CROSS-FAN-S. Each of these antennas stands upright above a ground plane, and has edges expressed by an exponential function and a circle function. The four antennas are investigated using frequencies from 1.5 GHz to 11 GHz. The CROSS-FAN is found to have a lower VSWR over a wide frequency band compared to the U.S.-FAN. The CROSS-FAN-W and CROSS-FAN-S are modified versions of the CROSS-FAN, each designed to have a stop band (a high VSWR frequency range) for interference cancellation. The stop band for the CROSS-FAN-W is controlled by a wire (total length 4Lwire) that connects the fan-shaped elements. The center frequency of the stop band fstop is close to the frequency corresponding to a wire segment length Lwire of half the wavelength. It is also found that the stop band in the CROSS-FAN-S can be controlled by four slots, one cut into each of the fan-shaped elements. The center frequency of the stop band fstop is close to the frequency corresponding to a slot length Lslot of one-quarter of the wavelength. Experimental work is performed to confirm the theoretical results, using the CROSS-FAN-S.

Tunable plasmons in regular planar arrays of graphene nanoribbons with armchair and zigzag-shaped edges

Directory of Open Access Journals (Sweden)

Cristian Vacacela Gomez

2017-01-01

Full Text Available Recent experimental evidence for and the theoretical confirmation of tunable edge plasmons and surface plasmons in graphene nanoribbons have opened up new opportunities to scrutinize the main geometric and conformation factors, which can be used to modulate these collective modes in the infrared-to-terahertz frequency band. Here, we show how the extrinsic plasmon structure of regular planar arrays of graphene nanoribbons, with perfectly symmetric edges, is influenced by the width, chirality and unit-cell length of each ribbon, as well as the in-plane vacuum distance between two contiguous ribbons. Our predictions, based on time-dependent density functional theory, in the random phase approximation, are expected to be of immediate help for measurements of plasmonic features in nanoscale architectures of nanoribbon devices.

Regional estimation of savanna grass nitrogen using the red-edge band of the RapidEye sensor

CSIR Research Space (South Africa)

Ramoelo, Abel

2012-10-01

Full Text Available recent high resolution spaceborne multispectral sensor (i.e. RapidEye) in the Kruger National Park (KNP) and its surrounding areas, South Africa. The RapidEyesensor contains five spectral bands in the visible-to-near infrared (VNIR), including a red...

Degeneracy analysis for a supercell of a photonic crystal and its application to the creation of band gaps

International Nuclear Information System (INIS)

Wu Liang; Zhuang Fie; He Sailing

2003-01-01

A method is introduced to analyze the degeneracy properties of the band structure of a photonic crystal by making use of supercells. The band structure associated with a supercell of a photonic crystal has degeneracies at the edge of the Brillouin zone if the photonic crystal has some kind of point group symmetry. The E-polarization and H-polarization cases have the same degeneracies for a two-dimensional (2D) photonic crystal. Two theorems on degeneracies in the band structure associated with the supercell are given and proved. These degeneracies can be lifted to create photonic band gaps by changing the translation group symmetry of the photonic crystal (the point group symmetry of the photonic crystal may remain unchanged), which consequently changes the transform matrix between the supercell and the smallest unit cell. The existence of photonic band gaps for many known 2D photonic crystals is explained through the degeneracy analysis. Some structures with large band gaps are also found through the present degeneracy analysis

Band alignment at the Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4}/CdS interface

Energy Technology Data Exchange (ETDEWEB)

Haight, Richard; Barkhouse, Aaron; Gunawan, Oki; Shin, Byungha; Copel, Matt; Hopstaken, Marinus; Mitzi, David B [IBM TJ Watson Research Center, P.O. Box 218, Yorktown Hts., New York 10598 (United States)

2011-06-20

Energy band alignments between CdS and Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4} (CZTSSe) grown via solution-based and vacuum-based deposition routes were studied as a function of the [S]/[S+Se] ratio with femtosecond laser ultraviolet photoelectron spectroscopy, photoluminescence, medium energy ion scattering, and secondary ion mass spectrometry. Band bending in the underlying CZTSSe layer was measured via pump/probe photovoltage shifts of the photoelectron spectra and offsets were determined with photoemission under flat band conditions. Increasing the S content of the CZTSSe films produces a valence edge shift to higher binding energy and increases the CZTSSe band gap. In all cases, the CdS conduction band offsets were spikes.

Tangential 2-D Edge Imaging for GPI and Edge/Impurity Modeling

International Nuclear Information System (INIS)

Maqueda, Ricardo; Levinton, Fred M.

2011-01-01

Nova Photonics, Inc. has a collaborative effort at the National Spherical Torus Experiment (NSTX). This collaboration, based on fast imaging of visible phenomena, has provided key insights on edge turbulence, intermittency, and edge phenomena such as edge localized modes (ELMs) and multi-faceted axisymmetric radiation from the edge (MARFE). Studies have been performed in all these areas. The edge turbulence/intermittency studies make use of the Gas Puff Imaging diagnostic developed by the Principal Investigator (Ricardo Maqueda) together with colleagues from PPPL. This effort is part of the International Tokamak Physics Activity (ITPA) edge, scrape-off layer and divertor group joint activity (DSOL-15: Inter-machine comparison of blob characteristics). The edge turbulence/blob study has been extended from the current location near the midplane of the device to the lower divertor region of NSTX. The goal of this effort was to study turbulence born blobs in the vicinity of the X-point region and their circuit closure on divertor sheaths or high density regions in the divertor. In the area of ELMs and MARFEs we have studied and characterized the mode structure and evolution of the ELM types observed in NSTX, as well as the study of the observed interaction between MARFEs and ELMs. This interaction could have substantial implications for future devices where radiative divertor regions are required to maintain detachment from the divertor plasma facing components.

Topologically protected edge states for out-of-plane and in-plane bulk elastic waves

Science.gov (United States)

Huo, Shao-Yong; Chen, Jiu-Jiu; Huang, Hong-Bo

2018-04-01

Topological phononic insulators (TPnIs) show promise for application in the manipulation of acoustic waves for the design of low-loss transmission and perfectly integrated communication devices. Since solid phononic crystals exist as a transverse polarization mode and a mixed longitudinal-transverse polarization mode, the realization of topological edge states for both out-of-plane and in-plane bulk elastic waves is desirable to enhance the controllability of the edge waves in solid systems. In this paper, a two-dimensional (2D) solid/solid hexagonal-latticed phononic system that simultaneously supports the topologically protected edge states for out-of-plane and in-plane bulk elastic waves is investigated. Firstly, two pairs of two-fold Dirac cones, respectively corresponding to the out-of-plane and in-plane waves, are obtained at the same frequency by tuning the crystal parameters. Then, a strategy of zone folding is invoked to form double Dirac cones. By shrinking and expanding the steel scatterer, the lattice symmetry is broken, and band inversions induced, giving rise to an intriguing topological phase transition. Finally, the topologically protected edge states for both out-of-plane and in-plane bulk elastic waves, which can be simultaneously located at the frequency range from 1.223 to 1.251 MHz, are numerically observed. Robust pseudospin-dependent elastic edge wave propagation along arbitrary paths is further demonstrated. Our results will significantly broaden its practical application in the engineering field.

Direct in situ observations of single Fe atom catalytic processes and anomalous diffusion at graphene edges

Science.gov (United States)

Zhao, Jiong; Deng, Qingming; Avdoshenko, Stanislav M.; Fu, Lei; Eckert, Jürgen; Rümmeli, Mark H.

2014-01-01

Single-atom catalysts are of great interest because of their high efficiency. In the case of chemically deposited sp2 carbon, the implementation of a single transition metal atom for growth can provide crucial insight into the formation mechanisms of graphene and carbon nanotubes. This knowledge is particularly important if we are to overcome fabrication difficulties in these materials and fully take advantage of their distinct band structures and physical properties. In this work, we present atomically resolved transmission EM in situ investigations of single Fe atoms at graphene edges. Our in situ observations show individual iron atoms diffusing along an edge either removing or adding carbon atoms (viz., catalytic action). The experimental observations of the catalytic behavior of a single Fe atom are in excellent agreement with supporting theoretical studies. In addition, the kinetics of Fe atoms at graphene edges are shown to exhibit anomalous diffusion, which again, is in agreement with our theoretical investigations. PMID:25331874

Vibrationally resolved NEXAFS at C and N K-edges of pyridine, 2-fluoropyridine and 2,6-difluoropyridine: A combined experimental and theoretical assessment

Energy Technology Data Exchange (ETDEWEB)

Baiardi, Alberto; Mendolicchio, Marco; Barone, Vincenzo, E-mail: vincenzo.barone@sns.it [Scuola Normale Superiore, Piazza dei Cavalieri 7, 56125 Pisa (Italy); Fronzoni, Giovanna; Cardenas Jimenez, Gustavo Adolfo; Stener, Mauro; Grazioli, Cesare [Dipartimento di Scienze Chimiche e Farmaceutiche, Universita’ di Trieste, Via Giorgieri 1, 34127 Trieste (Italy); Simone, Monica de [CNR-IOM, Laboratorio TASC, Area Science Park Basovizza, 34149 Trieste (Italy); Coreno, Marcello [CNR-ISM, UOS Trieste, Area Science Park Basovizza, 34149 Trieste (Italy)

2015-11-28

In the present work, the near edge X-ray absorption spectroscopy (NEXAFS) spectra at both C and N K-edges of pyridine, 2-fluoropyridine, and 2,6-difluoropyridine have been studied both experimentally and theoretically. From an electronic point of view, both transition potential density functional theory and time-dependent density functional theory approaches lead to reliable results provided that suitable basis sets and density functionals are employed. In this connection, the global hybrid B3LYP functional in conjunction with the EPR-III basis set appears particularly suitable after constant scaling of the band positions. For the N K-edge, vertical energies obtained at these levels and broadened by symmetric Gaussian distributions provide spectra in reasonable agreement with the experiment. Vibronic contributions further modulate the band-shapes leading to a better agreement with the experimental results, but are not strictly necessary for semi-quantitative investigations. On the other hand, vibronic contributions are responsible for strong intensity redistribution in the NEXAFS C K-edge spectra, and their inclusion is thus mandatory for a proper description of experiments. In this connection, the simple vertical gradient model is particularly appealing in view of its sufficient reliability and low computational cost. For more quantitative results, the more refined vertical Hessian approach can be employed, and its effectiveness has been improved thanks to a new least-squares fitting approach.

Edge effects in a small pixel CdTe for X-ray imaging

Science.gov (United States)

Duarte, D. D.; Bell, S. J.; Lipp, J.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.; Kachkanov, V.; Sawhney, K. J. S.

2013-10-01

Large area detectors capable of operating with high detection efficiency at energies above 30 keV are required in many contemporary X-ray imaging applications. The properties of high Z compound semiconductors, such as CdTe, make them ideally suitable to these applications. The STFC Rutherford Appleton Laboratory has developed a small pixel CdTe detector with 80 × 80 pixels on a 250 μm pitch. Historically, these detectors have included a 200 μm wide guard band around the pixelated anode to reduce the effect of defects in the crystal edge. The latest version of the detector ASIC is capable of four-side butting that allows the tiling of N × N flat panel arrays. To limit the dead space between modules to the width of one pixel, edgeless detector geometries have been developed where the active volume of the detector extends to the physical edge of the crystal. The spectroscopic performance of an edgeless CdTe detector bump bonded to the HEXITEC ASIC was tested with sealed radiation sources and compared with a monochromatic X-ray micro-beam mapping measurements made at the Diamond Light Source, U.K. The average energy resolution at 59.54 keV of bulk and edge pixels was 1.23 keV and 1.58 keV, respectively. 87% of the edge pixels present fully spectroscopic performance demonstrating that edgeless CdTe detectors are a promising technology for the production of large panel radiation detectors for X-ray imaging.

Electrically pumped edge-emitting photonic bandgap semiconductor laser

Science.gov (United States)

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

The fundamental absorption edge in MnIn{sub 2}Se{sub 4} layer semi-magnetic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Rincón, C., E-mail: crincon@ula.ve [Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida (Venezuela, Bolivarian Republic of); Torrres, T.E. [Laboratorio de Magnetismo, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida (Venezuela, Bolivarian Republic of); Instituto de Nanociencia de Aragón, Laboratorio de Microscopías Avanzadas, Universidad de Zaragoza 50009, Zaragoza (Spain); Departamento de Física de la Materia Condensada, Facultad de Ciencias, Universidad de Zaragoza 50009, Zaragoza, Spain. (Spain); Sagredo, V. [Laboratorio de Magnetismo, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida (Venezuela, Bolivarian Republic of); Jiménez-Sandoval, Sergio J.; Mares-Jacinto, E. [CINVESTAV Querétaro, Libramiento Norponiente N° 2000, Frac. Real de Juriquilla, Querétaro, Qro. 76230 (Mexico)

2015-11-15

From the study of the optical absorption coefficient and photoluminescence spectra of the layer semi-magnetic semiconductor MnIn{sub 2}Se{sub 4} the nature of its fundamental absorption edge is established. It is found that the lowest-energy-gap of this compound is allowed-indirect between parabolic bands that vary from about 1.55–1.43 eV in the temperature range from 10 K to room temperature. In addition, two allowed direct band-to-band transitions beginning at 1.72 and 1.85 eV at 295 K, and at 1.82 and 1.96 eV at 10 K which are related to optical absorption processes between the uppermost Γ{sub 4}(z) and the middle Γ{sub 5}(x) valence bands and the conduction band respectively, are observed in the high energy range. It is also found that the crystal field splitting parameter (Δ{sub cf}) of MnIn{sub 2}Se{sub 4} is of about 0.15 eV nearly independent of the temperature. At energies around 2.2 eV a photoluminescence band related to internal transitions between d-excited levels of Mn{sup +2} ion to its {sup 6}A{sub 1} ground state is also observed in spectra.

Forests on the edge: Microenvironmental drivers of carbon cycle response to edge effects

Science.gov (United States)

Reinmann, A.; Hutyra, L.; Smith, I. A.; Thompson, J.

2017-12-01

Twenty percent of the world's forest is within 100 m of a forest edge, but much of our understanding of forest carbon (C) cycling comes from large, intact ecosystems, which creates an important mismatch between the landscapes we study and those we aim to characterize. The temperate broadleaf forest is the most heavily fragmented forest biome in the world and its growth and carbon storage responses to forest edge effects appear to be the opposite of those in the tropical and boreal regions. We used field measurements to quantify the drivers of temperate forest C cycling response to edge effects, characterizing vegetative growth, respiration, and forest structure. We find large gradients in air and soil temperature from the forest interior to edge (up to 4 and 10° C, respectively) and the magnitude of this gradient is inversely correlated to the size of the forest edge growth enhancement. Further, leaf area index increases with proximity to the forest edge. While we also find increases in soil respiration between the forest interior and edge, this flux is small relative to aboveground growth enhancement near the edge. These findings represent an important advancement in our understanding of forest C cycle response to edge effects and will greatly improve our capacity to constrain biogenic C fluxes in fragmented and heterogeneous landscapes.

Tuning characteristic of band gap and waveguide in a multi-stub locally resonant phononic crystal plate

Directory of Open Access Journals (Sweden)

Xiao-Peng Wang

2015-10-01

Full Text Available In this paper, the tuning characteristics of band gaps and waveguides in a locally resonant phononic crystal structure, consisting of multiple square stubs deposited on a thin homogeneous plate, are investigated. Using the finite element method and supercell technique, the dispersion relationships and power transmission spectra of those structures are calculated. In contrast to a system of one square stub, systems of multiple square stubs show wide band gaps at lower frequencies and an increased quantity of band gaps at higher frequencies. The vibration modes of the band gap edges are analyzed to clarify the mechanism of the generation of the lowest band gap. Additionally, the influence of the stubs arrangement on the band gaps in multi-stub systems is investigated. The arrangements of the stubs were found to influence the band gaps; this is critical to understand for practical applications. Based on this finding, a novel method to form defect scatterers by changing the arrangement of square stubs in a multi-stub perfect phononic crystal plate was developed. Defect bands can be induced by creating defects inside the original complete band gaps. The frequency can then be tuned by changing the defect scatterers’ stub arrangement. These results will help in fabricating devices such as acoustic filters and waveguides whose band frequency can be modulated.

Smoothness in Binomial Edge Ideals

Directory of Open Access Journals (Sweden)

Hamid Damadi

2016-06-01

Full Text Available In this paper we study some geometric properties of the algebraic set associated to the binomial edge ideal of a graph. We study the singularity and smoothness of the algebraic set associated to the binomial edge ideal of a graph. Some of these algebraic sets are irreducible and some of them are reducible. If every irreducible component of the algebraic set is smooth we call the graph an edge smooth graph, otherwise it is called an edge singular graph. We show that complete graphs are edge smooth and introduce two conditions such that the graph G is edge singular if and only if it satisfies these conditions. Then, it is shown that cycles and most of trees are edge singular. In addition, it is proved that complete bipartite graphs are edge smooth.

Cutting Edge Localisation in an Edge Profile Milling Head

NARCIS (Netherlands)

Fernandez Robles, Laura; Azzopardi, George; Alegre, Enrique; Petkov, Nicolai

2015-01-01

Wear evaluation of cutting tools is a key issue for prolonging their lifetime and ensuring high quality of products. In this paper, we present a method for the effective localisation of cutting edges of inserts in digital images of an edge profile milling head. We introduce a new image data set of

Edge colouring by total labellings

DEFF Research Database (Denmark)

Brandt, Stephan; Rautenbach, D.; Stiebitz, M.

2010-01-01

We introduce the concept of an edge-colouring total k-labelling. This is a labelling of the vertices and the edges of a graph G with labels 1, 2, ..., k such that the weights of the edges define a proper edge colouring of G. Here the weight of an edge is the sum of its label and the labels of its...

OUTFLOWS AND DARK BANDS AT ARCADE-LIKE ACTIVE REGION CORE BOUNDARIES

Energy Technology Data Exchange (ETDEWEB)

Scott, J. T.; Martens, P. C. H.; Tarr, L. [Department of Physics, Montana State University, Bozeman, MT 59717 (United States)

2013-03-10

Observations from the EUV Imaging Spectrometer (EIS) on board Hinode have revealed outflows and non-thermal line broadening in low intensity regions at the edges of active regions (ARs). We use data from Hinode's EIS, Solar Dynamic Observatory's Atmospheric Imaging Assembly and Helioseismic and Magnetic Imager, and the Transition Region and Coronal Explorer instrument to investigate the boundaries of arcade-like AR cores for NOAA ARs 11112, 10978, and 9077. A narrow, low intensity region that is observed at the core's periphery as a dark band shows outflows and increased spectral line broadening. This dark band is found to exist for days and appears between the bright coronal loop structures of different coronal topologies. We find a case where the dark band region is formed between the magnetic field from emerging flux and the field of the pre-existing flux. A magnetic field extrapolation indicates that this dark band is coincident with the spine lines or magnetic separatrices in the extrapolated field. This occurs over unipolar regions where the brightened coronal field is separated in connectivity and topology. This separation does not appear to be infinitesimal and an initial estimate of the minimum distance of separation is found to be Almost-Equal-To 1.5-3.5 Mm.

Investigation of the sensitivity of visible continuum Zeff(0) to edge radiation

International Nuclear Information System (INIS)

Telesca, G.; Oost, G. Van; Ongena, J.; Leys, C.; Schoon, N.

1992-01-01

The determination of Z eff from visible continuum radiation is based on the assumption that the line-integrated continuum signal is mostly composed of bremsstrahlung radiation. In practice a wavelength window relatively free of spectral lines is selected, and the line-integrated continuum signal along different chords from the edge up to the central plasma is measured. The local emissivity ε(r) is then calculated using an Abel inversion procedure, and the Z eff profile can be obtained. Although theory and techniques are well established, in any experimental device there remains an uncertainty in the calculated value of Z eff due to the non-bremsstrahlung radiation from the cooler edge plasma (e.g. emission from recombination and molecular bands). As a consequence, the local bremsstrahlung emissivity in the outer region of the plasma cannot be determined and the signal measured along every chord through the plasma contains a spurious contribution. In this paper the error in the value of the central plasma emissivity (and Z eff ) due to edge radiation has been investigated. Qualitative analytical considerations have been complemented by a qualitative analysis, consisting of the comparison of test emissivity profiles with Abel-inverted profiles obtained from the integrals along central chords only. (author) 5 refs., 5 figs

Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model

KAUST Repository

Mehraeen, Shafigh; Coropceanu, Veaceslav; Bré das, Jean-Luc

2013-01-01

We compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors. We consider the case

On the theory of improved confinement due to stationary multifaceted asymmetric radiation from the edge

International Nuclear Information System (INIS)

Herrera, J.J.E.; Martinell, J.J.; Morozov, D.Kh.

2003-01-01

Multifaceted asymmetric radiation from the edge (MARFE's) are toroidally symmetric and poloidally asymmetric radiation bands that occur in tokamaks as a result of a thermal instability, originated by radiation losses. It was observed in TFfR and TEXTOR that they formed as density was increased, and impurities concentrated on the edge. Under certain circumstances, they could evolve into weakly poloidal symmetric structures that cooled the edge of the plasma to a few tens of eV, thus leading to detachment from the limiter. Although non-stationary MARFE's are often precursors of disruptions, the use of a stochastic divertor in TORESUPRA, and of feedback controlled gas-puff in HT- 7 have proved the existence of stationary MARFE' s. Their appearance has been found to depend strongly on the impurity content of the plasma. They trigger internal transport barriers, observed in the electron temperature profiles. The purpose of this work is to review the evidence of the existence of stationary MARFEs, and whether they can actually lead to improved confinement regimes, through non-local mechanisms. (author)

Quasiparticle band gap of organic-inorganic hybrid perovskites: Crystal structure, spin-orbit coupling, and self-energy effects

Science.gov (United States)

Gao, Weiwei; Gao, Xiang; Abtew, Tesfaye A.; Sun, Yi-Yang; Zhang, Shengbai; Zhang, Peihong

2016-02-01

The quasiparticle band gap is one of the most important materials properties for photovoltaic applications. Often the band gap of a photovoltaic material is determined (and can be controlled) by various factors, complicating predictive materials optimization. An in-depth understanding of how these factors affect the size of the gap will provide valuable guidance for new materials discovery. Here we report a comprehensive investigation on the band gap formation mechanism in organic-inorganic hybrid perovskites by decoupling various contributing factors which ultimately determine their electronic structure and quasiparticle band gap. Major factors, namely, quasiparticle self-energy, spin-orbit coupling, and structural distortions due to the presence of organic molecules, and their influences on the quasiparticle band structure of organic-inorganic hybrid perovskites are illustrated. We find that although methylammonium cations do not contribute directly to the electronic states near band edges, they play an important role in defining the band gap by introducing structural distortions and controlling the overall lattice constants. The spin-orbit coupling effects drastically reduce the electron and hole effective masses in these systems, which is beneficial for high carrier mobilities and small exciton binding energies.

Effects of the edge shape and the width on the structural and electronic properties of silicene nanoribbons

International Nuclear Information System (INIS)

Song Yuling; Zhang Yan; Zhang Jianmin; Lu Daobang

2010-01-01

Under the generalized gradient approximation (GGA), the structural and electronic properties are studied for H-terminated silicene nanoribbons (SiNRs) with either zigzag edge (ZSiNRs) or armchair edge (ASiNRs) by using the first-principles projector-augmented wave potential within the density function theory (DFT) framework. The results show that the length of the Si-H bond is always 1.50 A, but the edge Si-Si bonds are shorter than the inner ones with identical orientation, implying a contraction relaxation of edge Si atoms. An edge state appears at the Fermi level E F in broader ZSiNRs, but does not appear in all ASiNRs due to their dimer Si-Si bond at edge. With increasing width of ASiNRs, the direct band gaps exhibit not only an oscillation behavior, but also a periodic feature of Δ 3n > Δ 3n+1 > Δ 3n+2 for a certain integer n. The charge density contours analysis shows that the Si-H bond is an ionic bond due to a relative larger electronegativity of H atom. However, all kinds of the Si-Si bonds display a typical covalent bonding feature, although their strength depends on not only the bond orientation but also the bond position. That is, the larger deviation of the Si-Si bond orientation from the nanoribbon axis as well as the closer of the Si-Si bond to the nanoribbon edge, the stronger strength of the Si-Si bond. Besides the contraction of the nanoribbon is mainly in its width direction especially near edge, the addition contribution from the terminated H atoms may be the other reason.

Photonic band gap materials: design, synthesis, and applications

International Nuclear Information System (INIS)

John, S.

2000-01-01

Full text: Unlike semiconductors which facilitate the coherent propagation of electrons, photonic band gap (PBG) materials execute their novel functions through the coherent localization of photons. I review and discuss our recent synthesis of a large scale three-dimensional silicon photonic crystal with a complete photonic band gap near 1.5 microns. When a PBG material is doped with impurity atoms which have an electronic transition that lies within the gap, spontaneous emission of light from the atom is inhibited. Inside the gap, the photon forms a bound state to the atom. Outside the gap, radiative dynamics in the colored vacuum is highly non Markovian. I discuss the influence of these memory effects on laser action. When spontaneous emission is absent, the next order radiative effect (resonance dipole dipole interaction between atoms) must be incorporated leading to anomalous nonlinear optical effects which occur at a much lower threshold than in ordinary vacuum. I describe the collective switching of two-level atoms near a photonic band edge, by external laser field, from a passive state to one exhibiting population inversion. This effect is forbidden in ordinary vacuum. However, in the context of a PBG material, this effect may be utilized for an all-optical transistor. Finally, I discuss the prospects for a phase sensitive, single atom quantum memory device, onto which information may be written by an external laser pulse

Majorana flat bands in anisotropic systems

Energy Technology Data Exchange (ETDEWEB)

Mendler, Daniel; Kotetes, Panagiotis; Schoen, Gerd [Institut fuer theoretische Festkoerperphysik, Karlsruher Institut fuer Technologie (Germany)

2015-07-01

It has been recently proposed that topologically protected Majorana flat bands (MFBs) emerge in superconductors with nodal energy spectrum. In this work we introduce a new class of gapful superconductors, in which MFBs can occur due to strong anisotropy. The prototype system exhibiting this kind of behavior is the nematic p{sub x}+p{sub y} spinless superconductor, which supports an edge MFB with controllable bandwidth. Our proposal can be for instance experimentally implemented in topological superconductors engineered from i. semiconductors with tunable spin-orbit coupling or ii. topological insulator surfaces with intrinsic magnetic order in proximity to a conventional SC. By investigating the topological properties of both setups, we show that their unique features render them feasible platforms for manipulating the Majorana fermion bandstructure and realizing MFBs.

Formation and coupling of band gaps in a locally resonant elastic system comprising a string with attached resonators

International Nuclear Information System (INIS)

Xiao Yong; Mace, Brian R.; Wen Jihong; Wen Xisen

2011-01-01

A uniform string with periodically attached spring-mass resonators represents a simple locally resonant continuous elastic system whose band gap mechanisms are basic to more general and complicated problems. In this Letter, analytical models with explicit formulations are provided to understand the band gap mechanisms of such a system. Some interesting phenomena are demonstrated and discussed, such as asymmetric/symmetric attenuation behavior within a resonance gap, and the realization of a super-wide gap due to exact coupling between Bragg and resonance gaps. In addition, some approximate formulas for the evaluation of low frequency resonance gaps are derived using an approach different from existing investigations. - Research highlights: → We examine band gaps in a special one-dimensional locally resonant system. → Bragg and resonance gaps co-exist. → Explicit formulas for locating band edges are derived. → Exact physical models are used to clarify the band gap formation mechanisms. → Coupling between Bragg and resonance gaps leads to a super-wide gap.

Design of a double-anode magnetron-injection gun for the W-band gyrotron

Science.gov (United States)

Jang, Kwang Ho; Choi, Jin Joo; So, Joon Ho

2015-07-01

A double-anode magnetron-injection gun (MIG) was designed. The MIG is for a W-band 10-kW gyrotron. Analytic equations based on adiabatic theory and angular momentum conservation were used to examine the initial design parameters such as the cathode angle, and the radius of the beam emitting surface. The MIG's performances were predicted by using an electron trajectory code, the EGUN code. The beam spread of the axial velocity, Δvz/vz, obtained from the EGUN code was observed to be 1.34% at α = 1.3. The cathode edge emission and the thermal effect were modeled. The cathode edge emission was found to have a major effect on the velocity spread. The electron beam's quality was significantly improved by affixing non-emissive cylinders to the cathode.

Effect of ZnO on the Physical Properties and Optical Band Gap of Soda Lime Silicate Glass

Science.gov (United States)

Zaid, Mohd Hafiz Mohd; Matori, Khamirul Amin; Aziz, Sidek Hj. Abdul; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

2012-01-01

This manuscript reports on the physical properties and optical band gap of five samples of soda lime silicate (SLS) glass combined with zinc oxide (ZnO) that were prepared by a melting and quenching process. To understand the role of ZnO in this glass structure, the density, molar volume and optical band gaps were investigated. The density and absorption spectra in the Ultra-Violet-Visible (UV-Visible) region were recorded at room temperature. The results show that the densities of the glass samples increased as the ZnO weight percentage increased. The molar volume of the glasses shows the same trend as the density: the molar volume increased as the ZnO content increased. The optical band gaps were calculated from the absorption edge, and it was found that the optical band gap decreased from 3.20 to 2.32 eV as the ZnO concentration increased. PMID:22837711

Development of edge effects around experimental ecosystem hotspots is affected by edge density and matrix type

Science.gov (United States)

Ecological edge effects are sensitive to landscape context. In particular, edge effects can be altered by matrix type and by the presence of other nearby edges. We experimentally altered patch configurations in an African savanna to determine how edge density and matrix type influence edge effect de...

Edge effects in composites

International Nuclear Information System (INIS)

Guz, A.N.; Kokhanenko, Yu.V.

1995-01-01

In the present article we survey papers on edge effects investigated by the rigorous approach. We interpret edge effects as stressed states created in a composite as a result of zones in which the stresses exhibit a rapidly changing behavior in comparison with the slow variation of the stresses outside such zones. Here the range of the edge effect is defined as the distance from the point of its inception to the boundary of the edge zone in a given direction. The transition of the stresses to the slowly varying state is determined within prescribed error limits. The size and configuration of the edge zone depends on the tolerated error. Clearly, the main difficulty associated with the rigorous approach is finding solutions of the elasticity problems. The finite-difference approach is suggested for the approximate solution of these problems. In light of the comparative time consumption of the finite-difference approach, it is best directed at certain classes of problems rather than at particular individual problems. Not too many papers on the investigation of edge effects by the rigorous approach have been published to date. Below, following in their footsteps, we formulate edge effect problems in composites, determine classes of problems, and investigate edge effects in composite materials and structural elements using them in Cartesian (planar and three-dimensional problems) and cylindrical (axisymmetric problems) coordinate frames. We note that the division of approaches to the study of edge effects into qualitative (nonrigorous) and quantitative (rigorous) reflects the authors own point of view. Of course, other schemes of classification of the approaches to the investigation of the regions of rapidly varying states in composites are possible

The hierarchically organized splitting of chromosome bands into sub-bands analyzed by multicolor banding (MCB).

Science.gov (United States)

Lehrer, H; Weise, A; Michel, S; Starke, H; Mrasek, K; Heller, A; Kuechler, A; Claussen, U; Liehr, T

2004-01-01

To clarify the nature of chromosome sub-bands in more detail, the multicolor banding (MCB) probe-set for chromosome 5 was hybridized to normal metaphase spreads of GTG band levels at approximately 850, approximately 550, approximately 400 and approximately 300. It could be observed that as the chromosomes became shorter, more of the initial 39 MCB pseudo-colors disappeared, ending with 18 MCB pseudo-colored bands at the approximately 300-band level. The hierarchically organized splitting of bands into sub-bands was analyzed by comparing the disappearance or appearance of pseudo-color bands of the four different band levels. The regions to split first are telomere-near, centromere-near and in 5q23-->q31, followed by 5p15, 5p14, and all GTG dark bands in 5q apart from 5q12 and 5q32 and finalized by sub-band building in 5p15.2, 5q21.2-->q21.3, 5q23.1 and 5q34. The direction of band splitting towards the centromere or the telomere could be assigned to each band separately. Pseudo-colors assigned to GTG-light bands were resistant to band splitting. These observations are in concordance with the recently proposed concept of chromosome region-specific protein swelling. Copyright 2003 S. Karger AG, Basel

Redox-dependent spatially resolved electrochemistry at graphene and graphite step edges.

Science.gov (United States)

Güell, Aleix G; Cuharuc, Anatolii S; Kim, Yang-Rae; Zhang, Guohui; Tan, Sze-yin; Ebejer, Neil; Unwin, Patrick R

2015-04-28

The electrochemical (EC) behavior of mechanically exfoliated graphene and highly oriented pyrolytic graphite (HOPG) is studied at high spatial resolution in aqueous solutions using Ru(NH3)6(3+/2+) as a redox probe whose standard potential sits close to the intrinsic Fermi level of graphene and graphite. When scanning electrochemical cell microscopy (SECCM) data are coupled with that from complementary techniques (AFM, micro-Raman) applied to the same sample area, different time-dependent EC activity between the basal planes and step edges is revealed. In contrast, other redox couples (ferrocene derivatives) whose potential is further removed from the intrinsic Fermi level of graphene and graphite show uniform and high activity (close to diffusion-control). Macroscopic voltammetric measurements in different environments reveal that the time-dependent behavior after HOPG cleavage, peculiar to Ru(NH3)6(3+/2+), is not associated particularly with any surface contaminants but is reasonably attributed to the spontaneous delamination of the HOPG with time to create partially coupled graphene layers, further supported by conductive AFM measurements. This process has a major impact on the density of states of graphene and graphite edges, particularly at the intrinsic Fermi level to which Ru(NH3)6(3+/2+) is most sensitive. Through the use of an improved voltammetric mode of SECCM, we produce movies of potential-resolved and spatially resolved HOPG activity, revealing how enhanced activity at step edges is a subtle effect for Ru(NH3)6(3+/2+). These latter studies allow us to propose a microscopic model to interpret the EC response of graphene (basal plane and edges) and aged HOPG considering the nontrivial electronic band structure.

DIFFERENCES IN WATER VAPOR RADIATIVE TRANSFER AMONG 1D MODELS CAN SIGNIFICANTLY AFFECT THE INNER EDGE OF THE HABITABLE ZONE

International Nuclear Information System (INIS)

Yang, Jun; Wang, Yuwei; Leconte, Jérémy; Forget, François; Wolf, Eric T.; Goldblatt, Colin; Feldl, Nicole; Merlis, Timothy; Koll, Daniel D. B.; Ding, Feng; Abbot, Dorian S.

2016-01-01

An accurate estimate of the inner edge of the habitable zone is critical for determining which exoplanets are potentially habitable and for designing future telescopes to observe them. Here, we explore differences in estimating the inner edge among seven one-dimensional radiative transfer models: two line-by-line codes (SMART and LBLRTM) as well as five band codes (CAM3, CAM4-Wolf, LMDG, SBDART, and AM2) that are currently being used in global climate models. We compare radiative fluxes and spectra in clear-sky conditions around G and M stars, with fixed moist adiabatic profiles for surface temperatures from 250 to 360 K. We find that divergences among the models arise mainly from large uncertainties in water vapor absorption in the window region (10 μ m) and in the region between 0.2 and 1.5 μ m. Differences in outgoing longwave radiation increase with surface temperature and reach 10–20 W m 2 ; differences in shortwave reach up to 60 W m 2 , especially at the surface and in the troposphere, and are larger for an M-dwarf spectrum than a solar spectrum. Differences between the two line-by-line models are significant, although smaller than among the band models. Our results imply that the uncertainty in estimating the insolation threshold of the inner edge (the runaway greenhouse limit) due only to clear-sky radiative transfer is ≈10% of modern Earth’s solar constant (i.e., ≈34 W m 2 in global mean) among band models and ≈3% between the two line-by-line models. These comparisons show that future work is needed that focuses on improving water vapor absorption coefficients in both shortwave and longwave, as well as on increasing the resolution of stellar spectra in broadband models.

DIFFERENCES IN WATER VAPOR RADIATIVE TRANSFER AMONG 1D MODELS CAN SIGNIFICANTLY AFFECT THE INNER EDGE OF THE HABITABLE ZONE

Energy Technology Data Exchange (ETDEWEB)

Yang, Jun; Wang, Yuwei [Department of Atmospheric and Oceanic Sciences, School of Physics, Peking University, Beijing (China); Leconte, Jérémy; Forget, François [Laboratoire de Météorologie Dynamique, Institut Pierre Simon Laplace, CNRS, Paris (France); Wolf, Eric T. [Laboratory for Atmospheric and Space Physics, University of Colorado in Boulder, CO (United States); Goldblatt, Colin [School of Earth and Ocean Sciences, University of Victoria, Victoria, BC (Canada); Feldl, Nicole [Division of Geological and Planetary Sciences, California Institute of Technology, CA (United States); Merlis, Timothy [Department of Atmospheric and Oceanic Sciences at McGill University, Montréal (Canada); Koll, Daniel D. B.; Ding, Feng; Abbot, Dorian S., E-mail: junyang@pku.edu.cn, E-mail: abbot@uchicago.edu [Department of the Geophysical Sciences, University of Chicago, Chicago, IL (United States)

2016-08-01

An accurate estimate of the inner edge of the habitable zone is critical for determining which exoplanets are potentially habitable and for designing future telescopes to observe them. Here, we explore differences in estimating the inner edge among seven one-dimensional radiative transfer models: two line-by-line codes (SMART and LBLRTM) as well as five band codes (CAM3, CAM4-Wolf, LMDG, SBDART, and AM2) that are currently being used in global climate models. We compare radiative fluxes and spectra in clear-sky conditions around G and M stars, with fixed moist adiabatic profiles for surface temperatures from 250 to 360 K. We find that divergences among the models arise mainly from large uncertainties in water vapor absorption in the window region (10 μ m) and in the region between 0.2 and 1.5 μ m. Differences in outgoing longwave radiation increase with surface temperature and reach 10–20 W m{sup 2}; differences in shortwave reach up to 60 W m{sup 2}, especially at the surface and in the troposphere, and are larger for an M-dwarf spectrum than a solar spectrum. Differences between the two line-by-line models are significant, although smaller than among the band models. Our results imply that the uncertainty in estimating the insolation threshold of the inner edge (the runaway greenhouse limit) due only to clear-sky radiative transfer is ≈10% of modern Earth’s solar constant (i.e., ≈34 W m{sup 2} in global mean) among band models and ≈3% between the two line-by-line models. These comparisons show that future work is needed that focuses on improving water vapor absorption coefficients in both shortwave and longwave, as well as on increasing the resolution of stellar spectra in broadband models.

Infective endocarditis following transcatheter edge-to-edge mitral valve repair: A systematic review.

Science.gov (United States)

Asmarats, Lluis; Rodriguez-Gabella, Tania; Chamandi, Chekrallah; Bernier, Mathieu; Beaudoin, Jonathan; O'Connor, Kim; Dumont, Eric; Dagenais, François; Paradis, Jean-Michel; Rodés-Cabau, Josep

2018-05-10

To assess the clinical characteristics, management, and outcomes of patients diagnosed with infective endocarditis (IE) after edge-to-edge mitral valve repair with the MitraClip device. Transcatheter edge-to-edge mitral valve repair has emerged as an alternative to surgery in high-risk patients. However, few data exist on IE following transcatheter mitral procedures. Four electronic databases (PubMed, Google Scholar, Embase, and Cochrane Library) were searched for original published studies on IE after edge-to-edge transcatheter mitral valve repair from 2003 to 2017. A total of 10 publications describing 12 patients with definitive IE (median age 76 years, 55% men) were found. The mean logistic EuroSCORE/EuroSCORE II were 41% and 45%, respectively. The IE episode occurred early (within 12 months post-procedure) in nine patients (75%; within the first month in five patients). Staphylococcus aureus was the most frequent (60%) causal microorganism, and severe mitral regurgitation was present in all cases but one. Surgical mitral valve replacement (SMVR) was performed in most (67%) patients, and the mortality associated with the IE episode was high (42%). IE following transcatheter edge-to-edge mitral valve repair is a rare but life-threatening complication, usually necessitating SMVR despite the high-risk profile of the patients. These results highlight the importance of adequate preventive measures and a prompt diagnosis and treatment of this serious complication. © 2018 Wiley Periodicals, Inc.

Nonreference Medical Image Edge Map Measure

Directory of Open Access Journals (Sweden)

Karen Panetta

2014-01-01

Full Text Available Edge detection is a key step in medical image processing. It is widely used to extract features, perform segmentation, and further assist in diagnosis. A poor quality edge map can result in false alarms and misses in cancer detection algorithms. Therefore, it is necessary to have a reliable edge measure to assist in selecting the optimal edge map. Existing reference based edge measures require a ground truth edge map to evaluate the similarity between the generated edge map and the ground truth. However, the ground truth images are not available for medical images. Therefore, a nonreference edge measure is ideal for medical image processing applications. In this paper, a nonreference reconstruction based edge map evaluation (NREM is proposed. The theoretical basis is that a good edge map keeps the structure and details of the original image thus would yield a good reconstructed image. The NREM is based on comparing the similarity between the reconstructed image with the original image using this concept. The edge measure is used for selecting the optimal edge detection algorithm and optimal parameters for the algorithm. Experimental results show that the quantitative evaluations given by the edge measure have good correlations with human visual analysis.

Edge responses are different in edges under natural versus anthropogenic influence: a meta-analysis using ground beetles.

Science.gov (United States)

Magura, Tibor; Lövei, Gábor L; Tóthmérész, Béla

2017-02-01

Most edges are anthropogenic in origin, but are distinguishable by their maintaining processes (natural vs. continued anthropogenic interventions: forestry, agriculture, urbanization). We hypothesized that the dissimilar edge histories will be reflected in the diversity and assemblage composition of inhabitants. Testing this "history-based edge effect" hypothesis, we evaluated published information on a common insect group, ground beetles (Coleoptera: Carabidae) in forest edges. A meta-analysis showed that the diversity-enhancing properties of edges significantly differed according to their history. Forest edges maintained by natural processes had significantly higher species richness than their interiors, while edges with continued anthropogenic influence did not. The filter function of edges was also essentially different depending on their history. For forest specialist species, edges maintained by natural processes were penetrable, allowing these species to move right through the edges, while edges still under anthropogenic interventions were impenetrable, preventing the dispersal of forest specialists out of the forest. For species inhabiting the surrounding matrix (open-habitat and generalist species), edges created by forestry activities were penetrable, and such species also invaded the forest interior. However, natural forest edges constituted a barrier and prevented the invasion of matrix species into the forest interior. Preserving and protecting all edges maintained by natural processes, and preventing anthropogenic changes to their structure, composition, and characteristics are key factors to sustain biodiversity in forests. Moreover, the increasing presence of anthropogenic edges in a landscape is to be avoided, as they contribute to the loss of biodiversity. Simultaneously, edges under continued anthropogenic disturbance should be restored by increasing habitat heterogeneity.

Nanoindentation near the edge

Science.gov (United States)

J.E. Jakes; C.R. Frihart; J.F. Beecher; R.J. Moon; P.J. Resto; Z.H. Melgarejo; O.M. Saurez; H. Baumgart; A.A. Elmustafa; D.S. Stone

2009-01-01

Whenever a nanoindent is placed near an edge, such as the free edge of the specimen or heterophase interface intersecting the surface, the elastic discontinuity associated with the edge produces artifacts in the load-depth data. Unless properly handled in the data analysis, the artifacts can produce spurious results that obscure any real trends in properties as...

Wide applicability of high-Tc pairing originating from coexisting wide and incipient narrow bands in quasi-one-dimensional systems

Science.gov (United States)

Matsumoto, Karin; Ogura, Daisuke; Kuroki, Kazuhiko

2018-01-01

We study superconductivity in the Hubbard model on various quasi-one-dimensional lattices with coexisting wide and narrow bands originating from multiple sites within a unit cell, where each site corresponds to a single orbital. The systems studied are the two-leg and three-leg ladders, the diamond chain, and the crisscross ladder. These one-dimensional lattices are weakly coupled to form two-dimensional (quasi-one-dimensional) ones, and the fluctuation exchange approximation is adopted to study spin-fluctuation-mediated superconductivity. When one of the bands is perfectly flat and the Fermi level intersecting the wide band is placed in the vicinity of, but not within, the flat band, superconductivity arising from the interband scattering processes is found to be strongly enhanced owing to the combination of the light electron mass of the wide band and the strong pairing interaction due to the large density of states of the flat band. Even when the narrow band has finite bandwidth, the pairing mechanism still works since the edge of the narrow band, due to its large density of states, plays the role of the flat band. The results indicate the wide applicability of the high-Tc pairing mechanism due to coexisting wide and "incipient" narrow bands in quasi-one-dimensional systems.

Edge subdivision and edge multisubdivision versus some domination related parameters in generalized corona graphs

Directory of Open Access Journals (Sweden)

Magda Dettlaff

2016-01-01

Full Text Available Given a graph \\(G=(V,E\\, the subdivision of an edge \\(e=uv\\in E(G\\ means the substitution of the edge \\(e\\ by a vertex \\(x\\ and the new edges \\(ux\\ and \\(xv\\. The domination subdivision number of a graph \\(G\\ is the minimum number of edges of \\(G\\ which must be subdivided (where each edge can be subdivided at most once in order to increase the domination number. Also, the domination multisubdivision number of \\(G\\ is the minimum number of subdivisions which must be done in one edge such that the domination number increases. Moreover, the concepts of paired domination and independent domination subdivision (respectively multisubdivision numbers are defined similarly. In this paper we study the domination, paired domination and independent domination (subdivision and multisubdivision numbers of the generalized corona graphs.

Topological valley-chiral edge states of Lamb waves in elastic thin plates

Science.gov (United States)

Wang, Jian; Mei, Jun

2018-05-01

We investigate the nontrivial topology of the band structure of Lamb waves in a thin phononic crystal plate. When inversion symmetry is broken, a valley pseudospin degree of freedom is formed around K and K‧ valleys for the A0 Lamb mode, which is decoupled from the S0 and SH0 modes in the low-frequency regime. Chiral edge states are explicitly demonstrated, which are immune to defects and exhibit unidirectional transport behaviors when intervalley scattering is weak. The quantum valley Hall effect is thus simulated in a simple way in the context of Lamb waves.

Asymmetrical edges induced strong current-polarization in embedded graphene nanoribbons

Science.gov (United States)

Li, Kuanhong; Zhang, Xiang-Hua

2018-05-01

We investigate the electronic structures and transport properties of the embedded zigzag graphene nanoribbon (E-ZGNR) in hexagonal boron nitride trenches, which are achievable in recent experiments. Our first principles results show that the E-ZGNR has a significant enhanced conductivity relative to common ZGNRs due to the existence of asymmetrical edge structures. Moreover, only one spin-orientation electrons possess a widely opened band gap at the magnetic ground state with anti-ferromagnetic configuration, resulting in a full current-polarization at low bias region. Our findings indicate that the state-of-the-art embedding technology is quite useful for tuning the electronic structure of ZGNR and building possible spin injection and spin filter devices in spintronics.

Investigation into short-range order, electric conductivity and optical absorption edge of indium selenide thin amorphous films

International Nuclear Information System (INIS)

Bilyj, M.N.; Didyk, G.V.; Stetsiv, Ya.I.; Yurechko, R.Ya.

1980-01-01

Thin amorphous films of InSe have been obtained by the method of discrete vacuum evaporation of about 10 -2 Pa. The short-range order is investigated according to the radial distribution curves. The temperature and film thickness are shown to affect the character of conductivity. The width of the forbidden band determined by the fundamental absorption edge is found to depend on the time of film annealing

Mortality after percutaneous edge-to-edge mitral valve repair: a contemporary review.

Science.gov (United States)

Kortlandt, Friso A; de Beenhouwer, Thomas; Swaans, Martin J; Post, Marco C; van der Heyden, Jan A S; Eefting, Frank D; Rensing, Benno J W M

2016-04-01

Percutaneous edge-to-edge mitral valve (MV) repair is a relatively new treatment option for mitral regurgitation (MR). After the feasibility and safety having been proved in low-surgical-risk patients, the use of this procedure has shifted more to the treatment of high-risk patients. With the absence of randomized controlled trials (RCT) for this particular subgroup, observational studies try to add evidence to the safety aspect of this procedure. These also provide short- and mid-term mortality figures. Several mortality predictors have been identified, which may help the optimal selection of patients who will benefit most from this technique. In this article we provide an overview of the literature about mortality and its predictors in patients treated with the percutaneous edge-to-edge device.

Adobe Edge Preview 3

CERN Document Server

Grover, Chris

2011-01-01

Want to use an Adobe tool to design animated web graphics that work on iPhone and iPad? You've come to the right book. Adobe Edge Preview 3: The Missing Manual shows you how to build HTML5 graphics using simple visual tools. No programming experience? No problem. Adobe Edge writes the underlying code for you. With this eBook, you'll be designing great-looking web elements in no time. Get to know the workspace. Learn how Adobe Edge Preview 3 performs its magic.Create and import graphics. Make drawings with Edge's tools, or use art you designed in other programs.Work with text. Build menus, lab

Discovery of high-performance low-cost n-type Mg3Sb2-based thermoelectric materials with multi-valley conduction bands

DEFF Research Database (Denmark)

Zhang, Jiawei; Song, Lirong; Pedersen, Steffen Hindborg

2017-01-01

Widespread application of thermoelectric devices for waste heat recovery requires low-cost high-performance materials. The currently available n-type thermoelectric materials are limited either by their low efficiencies or by being based on expensive, scarce or toxic elements. Here we report a low-cost...... because of the multi-valley band behaviour dominated by a unique near-edge conduction band with a sixfold valley degeneracy. This makes Te-doped Mg3Sb1.5Bi0.5 a promising candidate for the low- and intermediate-temperature thermoelectric applications....

Can We Afford These Affordances? GarageBand and the Double-Edged Sword of the Digital Audio Workstation

Science.gov (United States)

Bell, Adam Patrick

2015-01-01

The proliferation of computers, tablets, and smartphones has resulted in digital audio workstations (DAWs) such as GarageBand in being some of the most widely distributed musical instruments. Positing that software designers are dictating the music education of DAW-dependent music-makers, I examine the fallacy that music-making applications such…

SINGLE-BAND, TRIPLE-BAND, OR MULTIPLE-BAND HUBBARD MODELS

NARCIS (Netherlands)

ESKES, H; SAWATZKY, GA

1991-01-01

The relevance of different models, such as the one-band t-J model and the three-band Emery model, as a realistic description of the electronic structure of high-T(c) materials is discussed. Starting from a multiband approach using cluster calculations and an impurity approach, the following

Generalized Multi-Edge Analysis for K-Edge Densitometry

International Nuclear Information System (INIS)

Collins, M.

1998-01-01

In K-edge densitometry (KED), a continuous-energy x-ray beam is transmitted through a liquid sample. The actinide content of the sample can be measured through analysis of the transmitted portion of the x-ray beam. Traditional methods for KED analysis allow the simultaneous calculation of, at most, two actinide concentrations. A generalized multi-edge KED analytical method is presented, allowing up to six actinide concentrations to be calculated simultaneously. Applications of this method for hybrid KED/x-ray fluorescence (HKED) systems are discussed. Current HKED systems require the operator to know the approximate actinide content of each sample, and manually select the proper analysis mode. The new multi-edge KED technique allows rapid identification of the major actinide components in a sample, independent of actinide content. The proper HKED analysis mode can be selected automatically, without requiring sample content information from the user. Automatic HKED analysis would be especially useful in an analytical laboratory setting, where samples with truly unknown characteristics are encountered. Because this technique requires no hardware modifications, several facilities that use HKED may eventually benefit from this approach

Efficient band structure modulations in two-dimensional MnPSe3/CrSiTe3 van der Waals heterostructures

Science.gov (United States)

Pei, Qi; Wang, Xiaocha; Zou, Jijun; Mi, Wenbo

2018-05-01

As a research upsurge, van der Waals (vdW) heterostructures give rise to numerous combined merits and novel applications in nanoelectronics fields. Here, we systematically investigate the electronic structure of MnPSe3/CrSiTe3 vdW heterostructures with various stacking patterns. Then, particular attention of this work is paid on the band structure modulations in MnPSe3/CrSiTe3 vdW heterostructures via biaxial strain or electric field. Under a tensile strain, the relative band edge positions of heterostructures transform from type-I (nested) to type-II (staggered). The relocation of conduction band minimum also brings about a transition from indirect to direct band gap. Under a compressive strain, the electronic properties change from semiconducting to metallic. The physical mechanism of strain-dependent band structure may be ascribed to the shifts of the energy bands impelled by different superposition of atomic orbitals. Meanwhile, our calculations manifest that band gap values of MnPSe3/CrSiTe3 heterostructures are insensitive to the electric field. Even so, by applying a suitable intensity of negative electric field, the band alignment transition from type-I to type-II can also be realized. The efficient band structure modulations via external factors endow MnPSe3/CrSiTe3 heterostructures with great potential in novel applications, such as strain sensors, photocatalysis, spintronic and photoelectronic devices.

A Combined Theoretical and Experimental View on Valence and Conduction Band Densities of States of Lead Halide Perovskites

Science.gov (United States)

Kronik, Leeor; Endres, James; Egger, David A.; Kulbak, Michael; Kerner, Ross A.; Zhao, Lianfeng; Silver, Scott H.; Hodes, Gary; Rand, Barry P.; Cahen, David; Kahn, Antoine

We present results for the valence and conduction band density of states (DOS), measured via ultraviolet and inverse photoemission spectroscopies for three lead halide perovskites. Specifically, the DOS of MAPbI3, MAPbBr3, and CsPbBr3, grown on different substrates, are compared. Theoretical DOS, calculated via hybrid density functional theory and including spin-orbit coupling, are compared to experimental data. The agreement between experiment and theory, obtained after correcting the latter for quantitative discrepancies, leads to the identification of valence and conduction band spectral features. In particular, this comparison allows for precise determination of the energy position of the band edges, namely ionization energies and electron affinities of these materials. We find an unusually low DOS at the valence band maximum (VBM) of these systems, which confirms and generalizes previous findings of strong band dispersion and low DOS at the VBM of MAPbI3. This calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites.

Canopy gap edge determination and the importance of gap edges for plant diversity

Directory of Open Access Journals (Sweden)

D. Salvador-Van Eysenrode

2002-01-01

Full Text Available Canopy gaps, i.e. openings in the forest cover caused by the fall of structural elements, are considered to be important for the maintenance of diversity and for the forest cycle. A gap can be considered as a young forest patch in the forest matrix, composed of interior surrounded by an edge, both enclosed by a perimeter. Much of the attention has been focused on the gap interior. However, at gap edges the spectrum of regeneration opportunities for plants may be larger than in the interior. Although definitions of gap are still discussed, any definition can describe it in an acceptable way, if justified, but defining edges is complicated and appropriate descriptors should be used. A method to determine gap interior and edge, using light as a descriptor, is presented with an example of gaps from a beech forest (Fagus sylvatica in Belgium. Also, the relevance and implications of gap edges for plant diversity and calculation of forest turnover is discussed.

The Edge supersonic transport

Science.gov (United States)

Agosta, Roxana; Bilbija, Dushan; Deutsch, Marc; Gallant, David; Rose, Don; Shreve, Gene; Smario, David; Suffredini, Brian

1992-01-01

As intercontinental business and tourism volumes continue their rapid expansion, the need to reduce travel times becomes increasingly acute. The Edge Supersonic Transport Aircraft is designed to meet this demand by the year 2015. With a maximum range of 5750 nm, a payload of 294 passengers and a cruising speed of M = 2.4, The Edge will cut current international flight durations in half, while maintaining competitive first class, business class, and economy class comfort levels. Moreover, this transport will render a minimal impact upon the environment, and will meet all Federal Aviation Administration Part 36, Stage III noise requirements. The cornerstone of The Edge's superior flight performance is its aerodynamically efficient, dual-configuration design incorporating variable-geometry wingtips. This arrangement combines the benefits of a high aspect ratio wing at takeoff and low cruising speeds with the high performance of an arrow-wing in supersonic cruise. And while the structural weight concerns relating to swinging wingtips are substantial, The Edge looks to ever-advancing material technologies to further increase its viability. Heeding well the lessons of the past, The Edge design holds economic feasibility as its primary focus. Therefore, in addition to its inherently superior aerodynamic performance, The Edge uses a lightweight, largely windowless configuration, relying on a synthetic vision system for outside viewing by both pilot and passengers. Additionally, a fly-by-light flight control system is incorporated to address aircraft supersonic cruise instability. The Edge will be produced at an estimated volume of 400 aircraft and will be offered to airlines in 2015 at $167 million per transport (1992 dollars).

X-ray absorption near-edge structure in alpha-quartz and stishovite: Ab initio calculation with core - hole interaction

International Nuclear Information System (INIS)

Mo, Shang-Di; Ching, W. Y.

2001-01-01

Ab initio calculation of the XANSE/ELNES spectra for α quartz and stishovite were carried out using a large-supercell approach that includes the electron - core - hole interaction. Excellent agreements with experimental spectra were obtained for Si - K, Si - L 2,3 , and O - K edges. The usual interpretation using orbital-resolved local density of states in the conduction band is unsatisfactory. [copyright] 2001 American Institute of Physics

Operation of transition-edge sensors with excess thermal noise

International Nuclear Information System (INIS)

Maasilta, I J; Kinnunen, K M; Nuottajaervi, A K; Leppaeniemi, J; Luukanen, A

2006-01-01

The superconducting transition-edge sensor (TES) is currently one of the most attractive choices for ultra-high resolution calorimetry in the keV x-ray band, and is being considered for future ESA and NASA missions. We have performed a study on the noise characteristics of Au/Ti bilayer TESs, at operating temperatures around ∼100 mK, with the SQUID readout at 1.5 K. Experimental results indicate that without modifications the back-action noise from the SQUID chip degrades the noise characteristics significantly. We present a simple and effective solution to the problem: by installing an extra shunt resistor which absorbs the excess radiation from the SQUID input, we have reduced the excess thermal (photon) noise power down by approximately a factor of five, allowing high resolution operation of the sensors

Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors.

Science.gov (United States)

Liu, Fei; Wang, Jian; Guo, Hong

2016-10-27

Black phosphorus (BP) tunneling field effect transistors (TFETs) using heterojunctions (Hes) are investigated by atomistic quantum transport simulations. It is observed that edge states have a great impact on the transport characteristics of BP He-TFETs, which results in the potential pinning effect and deterioration of gate control. However, the on-state current can be effectively enhanced by using hydrogen to saturate the edge dangling bonds in BP He-TFETs, by which means edge states are quenched. By extending layered BP with a smaller band gap to the channel region and modulating the BP thickness, the device performance of BP He-TFETs can be further optimized and can fulfil the requirements of the international technology road-map for semiconductors (ITRS) 2013 for low power applications. In 15 nm 3L-1L and 4L-1L BP He-TFETs along the armchair direction the on-state currents are over two times larger than the current required by ITRS 2013 and can reach above 10 3 μA μm -1 with the fixed off-state current of 10 pA μm -1 . It is also found that the ambipolar effect can be effectively suppressed in BP He-TFETs.

Detecting edges in the X-ray surface brightness of galaxy clusters

Science.gov (United States)

Sanders, J. S.; Fabian, A. C.; Russell, H. R.; Walker, S. A.; Blundell, K. M.

2016-08-01

The effects of many physical processes in the intracluster medium of galaxy clusters imprint themselves in X-ray surface brightness images. It is therefore important to choose optimal methods for extracting information from and enhancing the interpretability of such images. We describe in detail a gradient filtering edge detection method that we previously applied to images of the Centaurus cluster of galaxies. The Gaussian gradient filter measures the gradient in the surface brightness distribution on particular spatial scales. We apply this filter on different scales to Chandra X-ray observatory images of two clusters with active galactic nucleus feedback, the Perseus cluster and M 87, and a merging system, A 3667. By combining filtered images on different scales using radial filters spectacular images of the edges in a cluster are produced. We describe how to assess the significance of features in filtered images. We find the gradient filtering technique to have significant advantages for detecting many kinds of features compared to other analysis techniques, such as unsharp masking. Filtering cluster images in this way in a hard energy band allows shocks to be detected.

Helical quantum states in HgTe quantum dots with inverted band structures.

Science.gov (United States)

Chang, Kai; Lou, Wen-Kai

2011-05-20

We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of the HgTe QD are fully spin-polarized and show ringlike density distributions near the boundary of the QD and spin-angular momentum locking. The persistent charge currents and magnetic moments, i.e., the Aharonov-Bohm effect, can be observed in such a QD structure. This feature offers us a practical way to detect these exotic ringlike edge states by using the SQUID technique.

Pinning of fullerene lowest unoccupied molecular orbital edge at the interface with standing up copper phthalocyanine

International Nuclear Information System (INIS)

Wang, Chenggong; Irfan, Irfan; Turinske, Alexander J.; Gao, Yongli

2012-01-01

The electronic structure evolution of interfaces of fullerene (C 60 ) with copper phthalocyanine (CuPc) on highly oriented pyrolitic graphite (HOPG) and on native silicon oxide has been investigated with ultra-violet photoemission spectroscopy and inverse photoemission spectroscopy. The lowest unoccupied molecular orbital edge of C 60 was found to be pinned at the interface with CuPc on SiO 2 . A substantial difference in the electron affinity of CuPc on the two substrates was observed as the orientation of CuPc is lying flat on HOPG and standing up on SiO 2 . The ionization potential and electron affinity of C 60 were not affected by the orientation of CuPc due to the spherical symmetry of C 60 molecules. We observed band bending in C 60 on the standing-up orientation of CuPc molecules, while the energy levels of C 60 on the flat lying orientation of CuPc molecules were observed to be flat. - Highlights: ► Orientation of copper phthalocyanine (CuPc) on ordered graphite and silicon oxide. ► Pinning of lowest unoccupied molecular orbital edge of C60 to the Fermi level on CuPc. ► No C60 pinning or band bending was observed on flat laying CuPc. ► Results are useful for organic photovoltaic and organic light emitting diode research.

Theory of edge radiation

Energy Technology Data Exchange (ETDEWEB)

Geloni, G.; Kocharyan, V.; Saldin, E.; Schneidmiller, E.; Yurkov, M.

2008-08-15

We formulate a complete theory of Edge Radiation based on a novel method relying on Fourier Optics techniques. Similar types of radiation like Transition UndulatorRadiation are addressed in the framework of the same formalism. Special attention is payed in discussing the validity of approximations upon which the theory is built. Our study makes consistent use of both similarity techniques and comparisons with numerical results from simulation. We discuss both near and far zone. Physical understanding of many asymptotes is discussed. Based on the solution of the field equation with a tensor Green's function technique, we also discuss an analytical model to describe the presence of a vacuum chamber. In particular, explicit calculations for a circular vacuum chamber are reported. Finally, we consider the use of Edge Radiation as a tool for electron beam diagnostics. We discuss Coherent Edge Radiation, Extraction of Edge Radiation by a mirror, and other issues becoming important at high electron energy and long radiation wavelength. Based on this work we also study the impact of Edge Radiation on XFEL setups and we discuss recent results. (orig.)

Importance of non-parabolic band effects in the thermoelectric properties of semiconductors

Science.gov (United States)

Chen, Xin; Parker, David; Singh, David J.

2013-01-01

We present an analysis of the thermoelectric properties of of n-type GeTe and SnTe in relation to the lead chalcogenides PbTe and PbSe. We find that the singly degenerate conduction bands of semiconducting GeTe and SnTe are highly non-ellipsoidal, even very close to the band edges. This leads to isoenergy surfaces with a strongly corrugated shape that is clearly evident at carrier concentrations well below 0.005 e per formula unit (7–9 × 1019 cm−3 depending on material). Analysis within Boltzmann theory suggests that this corrugation may be favorable for the thermoelectric transport. Our calculations also indicate that values of the power factor for these two materials may well exceed those of PbTe and PbSe. As a result these materials may exhibit n-type performance exceeding that of the lead chalcogenides. PMID:24196778

Geometric phase for a two-level system in photonic band gab crystal

Science.gov (United States)

Berrada, K.

2018-05-01

In this work, we investigate the geometric phase (GP) for a qubit system coupled to its own anisotropic and isotropic photonic band gap (PBG) crystal environment without Born or Markovian approximation. The qubit frequency affects the GP of the qubit directly through the effect of the PBG environment. The results show the deviation of the GP depends on the detuning parameter and this deviation will be large for relatively large detuning of atom frequency inside the gap with respect to the photonic band edge. Whereas for detunings outside the gap, the GP of the qubit changes abruptly to zero, exhibiting collapse phenomenon of the GP. Moreover, we find that the GP in the isotropic PBG photonic crystal is more robust than that in the anisotropic PBG under the same condition. Finally, we explore the relationship between the variation of the GP and population in terms of the physical parameters.

Optical band gap study of a-Se and Se-Sb thin films

International Nuclear Information System (INIS)

Kaur, Ramandeep; Singh, Palwinder; Thakur, Anup

2016-01-01

Amorphous selenium (a-Se) and a-Se_9_5Sb_5 alloy were prepared using melt quenching technique. X-ray diffraction (XRD) pattern confirmed the amorphous nature of the prepared samples. Composition of the prepared samples has been determined using Energy dispersive X-ray fluorescence (EDXRF) technique. Differential thermal analysis (DTA) confirmed the glassy nature of the prepared samples. Thin films of the prepared samples were deposited on glass substrate using thermal evaporation method. Amorphous nature of the deposited films was confirmed using XRD. Optical properties of these films were obtained from the UV-VIS transmission spectra, at normal incidence, over 200-1100 nm spectral range. The optical absorption edge was described by using the model given by the Tauc. Optical band gap of the deposited films was calculated using Tauc plot. Optical characterization showed that average transmission and optical band gap decreased with the addition of antinomy.

Edge effect on weevils and spiders

Directory of Open Access Journals (Sweden)

R. Horváth

2002-05-01

Full Text Available The edge effect on weevils and spiders was tested along oak forest – meadow transects using sweep-net samples at the Síkfökút Project in Hungary. For spiders the species richness was significantly higher in the forest edge than either in the meadow or the forest interior. For weevils the species richness of the forest edge was higher than that of the meadow, but the difference was not statistically significant whereas the species richness of the forest interior was significantly lower than that of the forest edge and the meadow. The composition of the spider assemblage of the edge was more similar to the forest, while the composition of weevils in the edge was more similar to the meadow. Our results based on two invertebrate groups operating on different trophic levels suggest that there is a significant edge effect for the studied taxa resulting in higher species richness in the edge.

Frequencies of the Edge-Magnetoplasmon Excitations in Gated Quantum Hall Edges

Science.gov (United States)

Endo, Akira; Koike, Keita; Katsumoto, Shingo; Iye, Yasuhiro

2018-06-01

We have investigated microwave transmission through the edge of quantum Hall systems by employing a coplanar waveguide (CPW) fabricated on the surface of a GaAs/AlGaAs two-dimensional electron gas (2DEG) wafer. An edge is introduced to the slot region of the CPW by applying a negative bias Vg to the central electrode (CE) and depleting the 2DEG below the CE. We observe peaks attributable to the excitation of edge magnetoplasmons (EMP) at a fundamental frequency f0 and at its harmonics if0 (i = 2,3, \\ldots ). The frequency f0 increases with decreasing Vg, indicating that EMP propagates with higher velocity for more negative Vg. The dependence of f0 on Vg is interpreted in terms of the variation in the distance between the edge state and the CE, which alters the velocity by varying the capacitive coupling between them. The peaks are observed to continue, albeit with less clarity, up to the regions of Vg where 2DEG still remains below the CE.

Feasibility of compensating for EUV field edge effects through OPC

Science.gov (United States)

Maloney, Chris; Word, James; Fenger, Germain L.; Niroomand, Ardavan; Lorusso, Gian F.; Jonckheere, Rik; Hendrickx, Eric; Smith, Bruce W.

2014-04-01

As EUV Lithography (EUVL) continues to evolve, it offers a possible solution to the problems of additional masks and lithography steps that drive up the cost and complexity of 193i multiple patterning. EUVL requires a non-telecentric reflective optical system for operation. This requirement causes EUV specific effects such as shadowing. The absorber physically shadows the reflective multilayer (ML) on an EUV reticle resulting in pattern fidelity degradation. To reduce this degradation, a thinner absorber may help. Yet, as the absorber thickness decreases, reflectivity increases in the `dark' region around the image field, resulting in a loss of contrast. The region around the edge of the die on the mask of unpatterned absorber material deposited on top of ML, known as the image border, is also susceptible to undesirable reflections in an ideally dark region. For EUVL to be enabled for high-volume manufacturing (HVM), reticle masking (REMA) blades are used to shield light from the image border to allow for the printing of densely spaced die. When die are printed densely, the image border of each neighboring die will overlap with the edge of a given die resulting in an increase of dose that overexposes features at the edge of the field. This effect is convolved with a fingerprint from the edge of the REMA blades. This phenomenon will be referred to as a field edge effect. One such mitigation strategy that has been investigated to reduce the field edge effect is to fully remove the ML along the image border to ensure that no actinic-EUV radiation can be reflected onto neighboring die. This has proven to suppress the effect, but residual out-of-band radiation still provides additional dose to features near the image border, especially in the corners where three neighboring fields overlap. Measurements of dense contact holes (CHs) have been made along the image border with and without a ML-etched border at IMEC in collaboration with Micron using the ASML NXE:3100. The

Transition-edge sensor imaging arrays for astrophysics applications

Science.gov (United States)

Burney, Jennifer Anne

Many interesting objects in our universe currently elude observation in the optical band: they are too faint or they vary rapidly and thus any structure in their radiation is lost over the period of an exposure. Conventional photon detectors cannot simultaneously provide energy resolution and time-stamping of individual photons at fast rates. Superconducting detectors have recently made the possibility of simultaneous photon counting, imaging, and energy resolution a reality. Our research group has pioneered the use of one such detector, the Transition-Edge Sensor (TES). TES physics is simple and elegant. A thin superconducting film, biased at its critical temperature, can act as a particle detector: an incident particle deposits energy and drives the film into its superconducting-normal transition. By inductively coupling the detector to a SQUID amplifier circuit, this resistance change can be read out as a current pulse, and its energy deduced by integrating over the pulse. TESs can be used to accurately time-stamp (to 0.1 [mu]s) and energy-resolve (0.15 eV at 1.6 eV) near-IR/visible/near-UV photons at rates of 30~kHz. The first astronomical observations using fiber-coupled detectors were made at the Stanford Student Observatory 0.6~m telescope in 1999. Further observations of the Crab Pulsar from the 107" telescope at the University of Texas McDonald Observatory showed rapid phase variations over the near-IR/visible/near-UV band. These preliminary observations provided a glimpse into a new realm of observations of pulsars, binary systems, and accreting black holes promised by TES arrays. This thesis describes the development, characterization, and preliminary use of the first camera system based on Transition-Edge Sensors. While single-device operation is relatively well-understood, the operation of a full imaging array poses significant challenges. This thesis addresses all aspects related to the creation and characterization of this cryogenic imaging

Predicted solar cell edge radiation effects

International Nuclear Information System (INIS)

Gates, M.T.

1993-01-01

The Advanced Solar Cell Orbital Test (ASCOT) will test six types of solar cells in a high energy proton environment. During the design of the experiment a question was raised about the effects of proton radiation incident on the edge of the solar cells and whether edge radiation shielding was required. Historical geosynchronous data indicated that edge radiation damage is not detectable over the normal end of life solar cell degradation; however because the ASCOT radiation environment has a much higher and more energetic fluence of protons, considerably more edge damage is expected. A computer analysis of the problem was made by modeling the expected radiation damage at the cell edge and using a network model of small interconnected solar cells to predict degradation in the cell's electrical output. The model indicated that the deepest penetration of edge radiation was at the top of the cell near the junction where the protons have access to the cell through the low density cell/cover adhesive layer. The network model indicated that the cells could tolerate high fluences at their edge as long as there was high electrical resistance between the edge radiated region and the contact system on top of the cell. The predicted edge radiation related loss was less than 2% of maximum power for GaAs/Ge solar cells. As a result, no edge radiation protection was used for ASCOT

L-band brightness temperature disaggregation for use with S-band and C-band radiometer data for WCOM

Science.gov (United States)

Yao, P.; Shi, J.; Zhao, T.; Cosh, M. H.; Bindlish, R.

2017-12-01

There are two passive microwave sensors onboard the Water Cycle Observation Mission (WCOM), which includes a synthetic aperture radiometer operating at L-S-C bands and a scanning microwave radiometer operating from C- to W-bands. It provides a unique opportunity to disaggregate L-band brightness temperature (soil moisture) with S-band C-bands radiometer data. In this study, passive-only downscaling methodologies are developed and evaluated. Based on the radiative transfer modeling, it was found that the TBs (brightness temperature) between the L-band and S-band exhibit a linear relationship, and there is an exponential relationship between L-band and C-band. We carried out the downscaling results by two methods: (1) downscaling with L-S-C band passive measurements with the same incidence angle from payload IMI; (2) downscaling with L-C band passive measurements with different incidence angle from payloads IMI and PMI. The downscaling method with L-S bands with the same incident angle was first evaluated using SMEX02 data. The RMSE are 2.69 K and 1.52 K for H and V polarization respectively. The downscaling method with L-C bands is developed with different incident angles using SMEX03 data. The RMSE are 2.97 K and 2.68 K for H and V polarization respectively. These results showed that high-resolution L-band brightness temperature and soil moisture products could be generated from the future WCOM passive-only observations.

Raman scattering and band-gap variations of Al-doped ZnO nanoparticles synthesized by a chemical colloid process

International Nuclear Information System (INIS)

Lo, Shih-Shou; Huang, Dison; Tu, Chun Hsiang; Hou, Chia-Hung; Chen, Chii-Chang

2009-01-01

This study synthesizes Al-doped ZnO (AZO) nanoparticles using a chemical colloid process. Raman scattering analysis shows that Al doping increases the lattice defects and induces Raman vibration modes of 651 cm -1 . The Raman shift of the active mode E 2 (high) of AZO nanoparticles shows the presence and increase in the stress in nanoparticles when the Al dopant concentration increases. Room-temperature photoluminescence (RT-PL) spectra of synthesized AZO nanoparticles exhibit strong UV emissions near the band edges. The RT-PL peak shifts to a higher photon energy region as the Al concentration increases, indicating a broadening of the band gap.

Novel digital K-edge imaging system with transition radiation from an 855-MeV electron beam

CERN Document Server

Hagenbuck, F; Clawiter, N; Euteneuer, H; Görgen, F; Holl, P; Johann, K; Kiser, K H; Kemmer, J; Kerschner, T; Kettig, O; Koch, H; Kube, G; Lauth, W; Mauhay, H; Schütrumpf, M; Stotter, R; Strüder, L; Walcher, T; Wilms, A; von Zanthier, C; Zemter, M

2001-01-01

A novel K-edge imaging method has been developed at the Mainz Microtron MAMI aiming at a very efficient use of the transition radiation (TR) flux generated by the external 855-MeV electron beam in a foil stack. A fan-like quasi-monochromatic hard X-ray beam is produced from the +or-1-mrad-wide TR cone with a highly oriented pyrolytic graphite (HOPG) crystal. The absorption of the object in front of a 30 mm*10 mm pn charge-coupled device (pn-CCD) photon detector is measured at every pixel by a broad-band energy scan around the K-absorption edge. This is accomplished by a synchronous variation of the lateral crystal position and the electron beam direction which defines also the direction of the TR cone. The system has been checked with a phantom consisting of a 2.5- mu m thick molybdenum sample embedded in a 136- or 272- mu m-thick copper bulk foil. A numerical analysis of the energy spectrum for every pixel demonstrates that data as far as +or-0.75 keV away from the K edge of molybdenum at 20 keV still improv...

High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Bhasker, H. P.; Dhar, S.; Sain, A.; Kesaria, Manoj; Shivaprasad, S. M.

2012-01-01

Transport and optical properties of random networks of c-axis oriented wedge-shaped GaN nanowalls grown spontaneously on c-plane sapphire substrates through molecular beam epitaxy are investigated. Our study suggests a one dimensional confinement of carriers at the top edges of these connected nanowalls, which results in a blue shift of the band edge luminescence, a reduction of the exciton-phonon coupling, and an enhancement of the exciton binding energy. Not only that, the yellow luminescence in these samples is found to be completely suppressed even at room temperature. All these changes are highly desirable for the enhancement of the luminescence efficiency of the material. More interestingly, the electron mobility through the network is found to be significantly higher than that is typically observed for GaN epitaxial films. This dramatic improvement is attributed to the transport of electrons through the edge states formed at the top edges of the nanowalls.

The visibility of IQHE at sharp edges: experimental proposals based on interactions and edge electrostatics

International Nuclear Information System (INIS)

Erkarslan, U; Oylumluoglu, G; Grayson, M; Siddiki, A

2012-01-01

The influence of the incompressible strips on the integer quantized Hall effect (IQHE) is investigated, considering a cleaved-edge overgrown (CEO) sample as an experimentally realizable sharp edge system. We propose a set of experiments to clarify the distinction between the large-sample limit when bulk disorder defines the IQHE plateau width and the small-sample limit smaller than the disorder correlation length, when self-consistent edge electrostatics define the IQHE plateau width. The large-sample or bulk quantized Hall (QH) regime is described by the usual localization picture, whereas the small-sample or edge regime is discussed within the compressible/incompressible strips picture, known as the screening theory of QH edges. Utilizing the unusually sharp edge profiles of the CEO samples, a Hall bar design is proposed to manipulate the edge potential profile from smooth to extremely sharp. By making use of a side-gate perpendicular to the two-dimensional electron system, it is shown that the plateau widths can be changed or even eliminated altogether. Hence, the visibility of IQHE is strongly influenced when adjusting the edge potential profile and/or changing the dc current direction under high currents in the nonlinear transport regime. As a second investigation, we consider two different types of ohmic contacts, namely highly transmitting (ideal) and highly reflecting (non-ideal) contacts. We show that if the injection contacts are non-ideal, but still ohmic, it is possible to measure directly the non-quantized transport taking place at the bulk of the CEO samples. The results of the experiments we propose will clarify the influence of the edge potential profile and the quality of the contacts, under QH conditions. (paper)

Edge control in CNC polishing, paper 2: simulation and validation of tool influence functions on edges.

Science.gov (United States)

Li, Hongyu; Walker, David; Yu, Guoyu; Sayle, Andrew; Messelink, Wilhelmus; Evans, Rob; Beaucamp, Anthony

2013-01-14

Edge mis-figure is regarded as one of the most difficult technical issues for manufacturing the segments of extremely large telescopes, which can dominate key aspects of performance. A novel edge-control technique has been developed, based on 'Precessions' polishing technique and for which accurate and stable edge tool influence functions (TIFs) are crucial. In the first paper in this series [D. Walker Opt. Express 20, 19787-19798 (2012)], multiple parameters were experimentally optimized using an extended set of experiments. The first purpose of this new work is to 'short circuit' this procedure through modeling. This also gives the prospect of optimizing local (as distinct from global) polishing for edge mis-figure, now under separate development. This paper presents a model that can predict edge TIFs based on surface-speed profiles and pressure distributions over the polishing spot at the edge of the part, the latter calculated by finite element analysis and verified by direct force measurement. This paper also presents a hybrid-measurement method for edge TIFs to verify the simulation results. Experimental and simulation results show good agreement.

Acyclicity in edge-colored graphs

DEFF Research Database (Denmark)

Gutin, Gregory; Jones, Mark; Sheng, Bin

2017-01-01

A walk W in edge-colored graphs is called properly colored (PC) if every pair of consecutive edges in W is of different color. We introduce and study five types of PC acyclicity in edge-colored graphs such that graphs of PC acyclicity of type i is a proper superset of graphs of acyclicity of type...

Balancing the edge effects budget: bay scallop settlement and loss along a seagrass edge.

Science.gov (United States)

Carroll, John M; Furman, Bradley T; Tettelbach, Stephen T; Peterson, Bradley J

2012-07-01

Edge effects are a dominant subject in landscape ecology literature, yet they are highly variable and poorly understood. Often, the literature suggests simple models for edge effects-positive (enhancement at the edge), negative (enhancement at the interior), or no effect (neutral)--on a variety of metrics, including abundance, diversity, and mortality. In the marine realm, much of this work has focused on fragmented seagrass habitats due to their importance for a variety of commercially important species. In this study, the settlement, recruitment, and survival of bay scallops was investigated across a variety of seagrass patch treatments. By simultaneously collecting settlers (those viable larvae available to settle and metamorphose) and recruits (those settlers that survive some period of time, in this case, 6 weeks) on the same collectors, we were able to demonstrate a "balance" between positive and negative edge effects, resulting in a net neutral effect. Scallop settlement was significantly enhanced along seagrass edges, regardless of patch type while survival was elevated within patch interiors. However, recruitment (the net result of settlement and post-settlement loss) did not vary significantly from edge to center, representing a neutral effect. Further, results suggest that post-settlement loss, most likely due to predation, appears to be the dominant mechanism structuring scallop abundance, not patterns in settlement. These data illustrate the complexity of edge effects, and suggest that the metric used to investigate the effect (be it abundance, survival, or other metrics) can often influence the magnitude and direction of the perceived effect. Traditionally, high predation along a habitat edge would have indicated an "ecological trap" for the species in question; however, this study demonstrates that, at the population level, an ecological trap may not exist.

Edge localized modes and edge pedestal in NBI and ICRF heated H, D and T-plasmas in JET

International Nuclear Information System (INIS)

Bhatnagar, V.; Lingertat, J.; Barnsley, R.

1998-12-01

Based on experiments carried out in JET in D:T mixtures varying from 100:0 to 5:95 and those carried out in hydrogen plasmas, the isotopic mass dependence of ELM parameters and the edge pedestal pressure in neutral beam (NBI) and ion cyclotron resonance (ICRF) heated H-mode plasmas is presented. The ELM frequency is found to decrease with the atomic mass number both in ICRH and NBI discharges. However, the frequency in the case of ICRH is about 8 - 10 times higher than in the NBI case. Assuming that ELMs occur at a critical edge pressure gradient, limited by the ballooning instability, the scaling of the maximum edge pressure is most consistent with the assumption that the width of the transport barrier scales as the ion poloidal Larmor radius governed by the average energy of fast ions at the edge. The critical edge pressure in NBI heated discharges increases with the isotopic mass which. is consistent with the higher deduced width of the edge transport, barrier in tritium than in deuterium and hydrogen. The critical edge pressure in ICRH discharges is smaller, presumably, due to the smaller fast-ion contribution to the edge region. As a consequence of the edge pressure scaling with isotopic mass, the edge operational space in the n e - T e diagram increases with operation in tritium. If the evidence that the edge pedestal width is governed by the average energy of fast ions in the edge prevails, the pedestal in ITER would be controlled by the slowing down energy spectrum of α-particles in the edge. (author)

A Novel Ku-Band/Ka-Band and Ka-Band/E-Band Multimode Waveguide Couplers for Power Measurement of Traveling-Wave Tube Amplifier Harmonic Frequencies

Science.gov (United States)

Wintucky, Edwin G.; Simons, Rainee N.

2015-01-01

This paper presents the design, fabrication and test results for a novel waveguide multimode directional coupler (MDC). The coupler, fabricated from two dissimilar frequency band waveguides, is capable of isolating power at the second harmonic frequency from the fundamental power at the output port of a traveling-wave tube (TWT) amplifier. Test results from proof-of-concept demonstrations are presented for a Ku-band/Ka-band MDC and a Ka-band/E-band MDC. In addition to power measurements at harmonic frequencies, a potential application of the MDC is in the design of a satellite borne beacon source for atmospheric propagation studies at millimeter-wave (mm-wave) frequencies (Ka-band and E-band).

Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO

Science.gov (United States)

Fishchuk, I. I.; Kadashchuk, A.; Bhoolokam, A.; de Jamblinne de Meux, A.; Pourtois, G.; Gavrilyuk, M. M.; Köhler, A.; Bässler, H.; Heremans, P.; Genoe, J.

2016-05-01

We suggest an analytic theory based on the effective medium approximation (EMA) which is able to describe charge-carrier transport in a disordered semiconductor with a significant degree of degeneration realized at high carrier concentrations, especially relevant in some thin-film transistors (TFTs), when the Fermi level is very close to the conduction-band edge. The EMA model is based on special averaging of the Fermi-Dirac carrier distributions using a suitably normalized cumulative density-of-state distribution that includes both delocalized states and the localized states. The principal advantage of the present model is its ability to describe universally effective drift and Hall mobility in heterogeneous materials as a function of disorder, temperature, and carrier concentration within the same theoretical formalism. It also bridges a gap between hopping and bandlike transport in an energetically heterogeneous system. The key assumption of the model is that the charge carriers move through delocalized states and that, in addition to the tail of the localized states, the disorder can give rise to spatial energy variation of the transport-band edge being described by a Gaussian distribution. It can explain a puzzling observation of activated and carrier-concentration-dependent Hall mobility in a disordered system featuring an ideal Hall effect. The present model has been successfully applied to describe experimental results on the charge transport measured in an amorphous oxide semiconductor, In-Ga-Zn-O (a-IGZO). In particular, the model reproduces well both the conventional Meyer-Neldel (MN) compensation behavior for the charge-carrier mobility and inverse-MN effect for the conductivity observed in the same a-IGZO TFT. The model was further supported by ab initio calculations revealing that the amorphization of IGZO gives rise to variation of the conduction-band edge rather than to the creation of localized states. The obtained changes agree with the one we

Dual band multi frequency rectangular patch microstrip antenna with flyswatter shaped slot for wireless systems

International Nuclear Information System (INIS)

Bhardwaj, Dheeraj; Saraswat, Shriti; Gulati, Gitansh; Shekhar, Snehanshu; Joshi, Kanika; Sharma, Komal

2016-01-01

In this paper a dual band planar antenna has been proposed for IEEE 802.16 Wi-MAX /IEEE 802.11 WLAN/4.9 GHz public safety applications. The antenna comprises a frequency bandwidth of 560MHz (3.37GHz-3.93GHz) for WLAN and WiMAX and 372MHz (4.82GHz-5.192GHz) for 4.9 GHz public safety applications and Radio astronomy services (4.8-4.94 GHz). The proposed antenna constitutes of a single microstrip patch reactively loaded with three identical steps positioned in a zig-zag manner towards the radiating edges of the patch. The coaxially fed patch antenna characteristics (radiation pattern, antenna gain, antenna directivity, current distribution, S_1_1) have been investigated. The antenna design is primarily focused on achieving a dual band operation.

Dual band multi frequency rectangular patch microstrip antenna with flyswatter shaped slot for wireless systems

Energy Technology Data Exchange (ETDEWEB)

Bhardwaj, Dheeraj, E-mail: dbhardwaj.bit@gmail.com [Department of Physics, BIT-Mesra-Jaipur Campus, Jaipur 302017 (India); Saraswat, Shriti, E-mail: saraswat.srishti@gmail.com; Gulati, Gitansh, E-mail: gitanshgulati@gmail.com; Shekhar, Snehanshu, E-mail: snehanshushekhar.bit@gmail.com; Joshi, Kanika, E-mail: kanika.karesh@gmail.com [Department of Electronics & Communication, BIT-Mesra-Jaipur Campus, Jaipur 302017 (India); Sharma, Komal, E-mail: kbhardwaj18@gmail.com [Department of Physics, Swami Keshvanand Institute of Technology, Jaipur 302017 (India)

2016-03-09

In this paper a dual band planar antenna has been proposed for IEEE 802.16 Wi-MAX /IEEE 802.11 WLAN/4.9 GHz public safety applications. The antenna comprises a frequency bandwidth of 560MHz (3.37GHz-3.93GHz) for WLAN and WiMAX and 372MHz (4.82GHz-5.192GHz) for 4.9 GHz public safety applications and Radio astronomy services (4.8-4.94 GHz). The proposed antenna constitutes of a single microstrip patch reactively loaded with three identical steps positioned in a zig-zag manner towards the radiating edges of the patch. The coaxially fed patch antenna characteristics (radiation pattern, antenna gain, antenna directivity, current distribution, S{sub 11}) have been investigated. The antenna design is primarily focused on achieving a dual band operation.

Dual band multi frequency rectangular patch microstrip antenna with flyswatter shaped slot for wireless systems

Science.gov (United States)

Bhardwaj, Dheeraj; Saraswat, Shriti; Gulati, Gitansh; Shekhar, Snehanshu; Joshi, Kanika; Sharma, Komal

2016-03-01

In this paper a dual band planar antenna has been proposed for IEEE 802.16 Wi-MAX /IEEE 802.11 WLAN/4.9 GHz public safety applications. The antenna comprises a frequency bandwidth of 560MHz (3.37GHz-3.93GHz) for WLAN and WiMAX and 372MHz (4.82GHz-5.192GHz) for 4.9 GHz public safety applications and Radio astronomy services (4.8-4.94 GHz). The proposed antenna constitutes of a single microstrip patch reactively loaded with three identical steps positioned in a zig-zag manner towards the radiating edges of the patch. The coaxially fed patch antenna characteristics (radiation pattern, antenna gain, antenna directivity, current distribution, S11) have been investigated. The antenna design is primarily focused on achieving a dual band operation.

Magnetohydrodynamic stability of tokamak edge plasmas

International Nuclear Information System (INIS)

Connor, J.W.; Hastie, R.J.; Wilson, H.R.; Miller, R.L.

1998-01-01

A new formalism for analyzing the magnetohydrodynamic stability of a limiter tokamak edge plasma is developed. Two radially localized, high toroidal mode number n instabilities are studied in detail: a peeling mode and an edge ballooning mode. The peeling mode, driven by edge current density and stabilized by edge pressure gradient, has features which are consistent with several properties of tokamak behavior in the high confinement open-quotes Hclose quotes-mode of operation, and edge localized modes (or ELMs) in particular. The edge ballooning mode, driven by the pressure gradient, is identified; this penetrates ∼n 1/3 rational surfaces into the plasma (rather than ∼n 1/2 , expected from conventional ballooning mode theory). Furthermore, there exists a coupling between these two modes and this coupling provides a picture of the ELM cycle

Coastline change mapping using a spectral band method and Sobel edge operator

Science.gov (United States)

Al-Mansoori, Saeed; Al-Marzouqi, Fatima

2016-10-01

Coastline extraction has become an essential activity in wake of the natural disasters taking place in some regions such as tsunami, flooding etc. Salient feature of such catastrophes is lack of reaction time available for combating emergency, thus it is the endeavor of any country to develop constant monitoring mechanism of shorelines. This is a challenging task because of the magnitude of changes taking place to the coastline regularly. Previous research findings highlight a need of formulating automation driven methodology for timely and accurate detection of alterations in the coastline impacting sustainability of mankind operating in the coastal zone. In this study, we propose a new approach for automatic extraction of the coastline using remote sensing data. This approach is composed of three main stages. Firstly, classifying pixels of the image into two categories i.e. land and water body by applying two normalized difference indices i.e. Normalized Difference Vegetation Index (NDVI) and Normalized Difference Water Index (NDWI). Then, the process of binary conversion of classified image takes place using a local threshold method. Finally, the coastline is extracted by applying Sobel edge operator with a pair of (3×3) kernels. The approach is tested using 2.5m DubaiSat-1 (DS1) and DubaiSat-2 (DS2) images captured to detect and monitor the changes occurring along Dubai coastal zone within a period of six years from 2009 till 2015. Experimental results prove that the approach is capable of extracting the coastlines from DS1 and DS2 images with moderate human interaction. The results of the study show an increase of 6% in Dubai shoreline resulting on account of numerous man-made infrastructure development projects in tourism and allied sectors.

Adobe Edge Quickstart Guide

CERN Document Server

Labrecque, Joseph

2012-01-01

Adobe Edge Quickstart Guide is a practical guide on creating engaging content for the Web with Adobe's newest HTML5 tool. By taking a chapter-by-chapter look at each major aspect of Adobe Edge, the book lets you digest the available features in small, easily understandable chunks, allowing you to start using Adobe Edge for your web design needs immediately. If you are interested in creating engaging motion and interactive compositions using web standards with professional tooling, then this book is for you. Those with a background in Flash Professional wanting to get started quickly with Adobe

Complex band structures of transition metal dichalcogenide monolayers with spin–orbit coupling effects

International Nuclear Information System (INIS)

Szczęśniak, Dominik; Ennaoui, Ahmed; Ahzi, Saïd

2016-01-01

Recently, the transition metal dichalcogenides have attracted renewed attention due to the potential use of their low-dimensional forms in both nano- and opto-electronics. In such applications, the electronic and transport properties of monolayer transition metal dichalcogenides play a pivotal role. The present paper provides a new insight into these essential properties by studying the complex band structures of popular transition metal dichalcogenide monolayers (MX 2 , where M   =  Mo, W; X   =  S, Se, Te) while including spin–orbit coupling effects. The conducted symmetry-based tight-binding calculations show that the analytical continuation from the real band structures to the complex momentum space leads to nonlinear generalized eigenvalue problems. Herein an efficient method for solving such a class of nonlinear problems is presented and yields a complete set of physically relevant eigenvalues. Solutions obtained by this method are characterized and classified into propagating and evanescent states, where the latter states manifest not only monotonic but also oscillatory decay character. It is observed that some of the oscillatory evanescent states create characteristic complex loops at the direct band gap of MX 2 monolayers, where electrons can directly tunnel between the band gap edges. To describe these tunneling currents, decay behavior of electronic states in the forbidden energy region is elucidated and their importance within the ballistic transport regime is briefly discussed. (paper)

Complex band structures of transition metal dichalcogenide monolayers with spin-orbit coupling effects

Science.gov (United States)

Szczęśniak, Dominik; Ennaoui, Ahmed; Ahzi, Saïd

2016-09-01

Recently, the transition metal dichalcogenides have attracted renewed attention due to the potential use of their low-dimensional forms in both nano- and opto-electronics. In such applications, the electronic and transport properties of monolayer transition metal dichalcogenides play a pivotal role. The present paper provides a new insight into these essential properties by studying the complex band structures of popular transition metal dichalcogenide monolayers (MX 2, where M  =  Mo, W; X  =  S, Se, Te) while including spin-orbit coupling effects. The conducted symmetry-based tight-binding calculations show that the analytical continuation from the real band structures to the complex momentum space leads to nonlinear generalized eigenvalue problems. Herein an efficient method for solving such a class of nonlinear problems is presented and yields a complete set of physically relevant eigenvalues. Solutions obtained by this method are characterized and classified into propagating and evanescent states, where the latter states manifest not only monotonic but also oscillatory decay character. It is observed that some of the oscillatory evanescent states create characteristic complex loops at the direct band gap of MX 2 monolayers, where electrons can directly tunnel between the band gap edges. To describe these tunneling currents, decay behavior of electronic states in the forbidden energy region is elucidated and their importance within the ballistic transport regime is briefly discussed.

The End-to-end Demonstrator for improved decision making in the water sector in Europe (EDgE)

Science.gov (United States)

Wood, Eric; Wanders, Niko; Pan, Ming; Sheffield, Justin; Samaniego, Luis; Thober, Stephan; Kumar, Rohinni; Prudhomme, Christel; Houghton-Carr, Helen

2017-04-01

High-resolution simulations of water resources from hydrological models are vital to supporting important climate services. Apart from a high level of detail, both spatially and temporally, it is important to provide simulations that consistently cover a range of timescales, from historical reanalysis to seasonal forecast and future projections. In the new EDgE project commissioned by the ECMWF (C3S) we try to fulfill these requirements. EDgE is a proof-of-concept project which combines climate data and state-of-the-art hydrological modelling to demonstrate a water-oriented information system implemented through a web application. EDgE is working with key European stakeholders representative of private and public sectors to jointly develop and tailor approaches and techniques. With these tools, stakeholders are assisted in using improved climate information in decision-making, and supported in the development of climate change adaptation and mitigation policies. Here, we present the first results of the EDgE modelling chain, which is divided into three main processes: 1) pre-processing and downscaling; 2) hydrological modelling; 3) post-processing. Consistent downscaling and bias corrections for historical simulations, seasonal forecasts and climate projections ensure that the results across scales are robust. The daily temporal resolution and 5km spatial resolution ensure locally relevant simulations. With the use of four hydrological models (PCR-GLOBWB, VIC, mHM, Noah-MP), uncertainty between models is properly addressed, while consistency is guaranteed by using identical input data for static land surface parameterizations. The forecast results are communicated to stakeholders via Sectoral Climate Impact Indicators (SCIIs) that have been created in collaboration with the end-user community of the EDgE project. The final product of this project is composed of 15 years of seasonal forecast and 10 climate change projections, all combined with four hydrological

Ex vivo hydrodynamics after central and paracommissural edge-to-edge technique: A further step toward transcatheter tricuspid repair?

Science.gov (United States)

Stock, Sina; Bohm, Heidemarie; Scharfschwerdt, Michael; Richardt, Doreen; Meyer-Saraei, Roza; Tsvelodub, Stanislav; Sievers, Hans-Hinrich

2018-03-01

Transcatheter approaches in heart valve disease became tremendously important and are currently established in the aortic position, but transcatheter tricuspid repair is still in its beginning and remains challenging. Replicating the surgical edge-to-edge technique, for example, with the MitraClip System (Abbott Vascular, Santa Clara, Calif), represents a promising option and has been reported successfully in small numbers of cases. However, up to now, few data considering the edge-to-edge technique as a transcatheter approach are available. This study aims to determine the ex vivo hydrodynamics after the central and paracommissural edge-to-edge technique in different pathologies. Because of basal or apical dislocation of papillary muscles, leaflet prolapse or tethering was simulated in porcine tricuspid valves mounted on a flexible holding device. Central and paracommissural edge-to-edge techniques were evaluated successively in these pathologies. Regurgitant volume and mean transvalvular gradient were determined in a pulse duplicator. In this ex vivo model, the isolated edge-to-edge technique reduced tricuspid regurgitation. In the prolapse model, regurgitant volume decreased significantly after central edge-to-edge technique (from 49.4 ± 13.6 mL/stroke to 39.3 ± 14.1 mL/stroke). In the tethering model, both the central and the paracommissural edge-to-edge techniques led to a significant decrease (from 48.7 ± 13.9 to 43.6 ± 15.6 and to 41.1 ± 13.8 mL/stroke). In all cases, the reduction of regurgitant volume was achieved at the cost of significantly increased mean transvalvular gradient. This study provides a reduction of tricuspid regurgitation after the edge-to-edge technique in the specific experimental setup. Whether this reduction is sufficient to treat tricuspid regurgitation successfully in clinical practice remains to be established. Transcatheter approaches need to be evaluated further, probably with regard to concomitant annuloplasty

Edge Simulation Laboratory

Energy Technology Data Exchange (ETDEWEB)

Krasheninnikov, Sergei I. [Univ. of California, San Diego, CA (United States); Angus, Justin [Univ. of California, San Diego, CA (United States); Lee, Wonjae [Univ. of California, San Diego, CA (United States)

2018-01-05

The goal of the Edge Simulation Laboratory (ESL) multi-institutional project is to advance scientific understanding of the edge plasma region of magnetic fusion devices via a coordinated effort utilizing modern computing resources, advanced algorithms, and ongoing theoretical development. The UCSD team was involved in the development of the COGENT code for kinetic studies across a magnetic separatrix. This work included a kinetic treatment of electrons and multiple ion species (impurities) and accurate collision operators.

Determination of the band gap of TiO2-Al2O3 films as a function of processing parameters

International Nuclear Information System (INIS)

Barajas-Ledesma, E.; Garcia-Benjume, M.L.; Espitia-Cabrera, I.; Ortiz-Gutierrez, M.; Espinoza-Beltran, F.J.; Mostaghimi, J.; Contreras-Garcia, M.E.

2010-01-01

In this work the study of band gap is based on the processing parameters and was calculated using the Indirect Transition Model. An experimental design was done, in order to have a sequence of 18 samples to analyze. The alumina doped titania thin films were prepared by combining electrophoretic deposition (EPD) with sputtering. The addition of alumina to the titania was with the purpose to reduce the band gap of the semiconductor. Several researches have tried to dope titania with other materials, because it has photocatalytic activity only in the UV spectrum. Then, reducing the band gap of the titania, it will have activity in the entire visible spectrum, and its applications increase considerably. Comparing with the adsorption line in the ultraviolet region for all the samples, the results show the adsorption edge for samples doped with fewer amounts of alumina shifts a little toward a lower energy region, leading to a band gap reduction.

Saturn's Rings Edge-on

Science.gov (United States)

1995-01-01

In one of nature's most dramatic examples of 'now-you see-them, now-you-don't', NASA's Hubble Space Telescope captured Saturn on May 22, 1995 as the planet's magnificent ring system turned edge-on. This ring-plane crossing occurs approximately every 15 years when the Earth passes through Saturn's ring plane.For comparison, the top picture was taken by Hubble on December 1, 1994 and shows the rings in a more familiar configuration for Earth observers.The bottom picture was taken shortly before the ring plane crossing. The rings do not disappear completely because the edge of the rings reflects sunlight. The dark band across the middle of Saturn is the shadow of the rings cast on the planet (the Sun is almost 3 degrees above the ring plane.) The bright stripe directly above the ring shadow is caused by sunlight reflected off the rings onto Saturn's atmosphere. Two of Saturn's icy moons are visible as tiny starlike objects in or near the ring plane. They are, from left to right, Tethys (slightly above the ring plane) and Dione.This observation will be used to determine the time of ring-plane crossing and the thickness of the main rings and to search for as yet undiscovered satellites. Knowledge of the exact time of ring-plane crossing will lead to an improved determination of the rate at which Saturn 'wobbles' about its axis (polar precession).Both pictures were taken with Hubble's Wide Field Planetary Camera 2. The top image was taken in visible light. Saturn's disk appears different in the bottom image because a narrowband filter (which only lets through light that is not absorbed by methane gas in Saturn's atmosphere) was used to reduce the bright glare of the planet. Though Saturn is approximately 900 million miles away, Hubble can see details as small as 450 miles across.The Wide Field/Planetary Camera 2 was developed by the Jet Propulsion Laboratory and managed by the Goddard Spaced Flight Center for NASA's Office of Space Science.This image and other images and

AliEn - EDG Interoperability in ALICE

CERN Document Server

Bagnasco, S; Buncic, P; Carminati, F; Cerello, P G; Saiz, P

2003-01-01

AliEn (ALICE Environment) is a GRID-like system for large scale job submission and distributed data management developed and used in the context of ALICE, the CERN LHC heavy-ion experiment. With the aim of exploiting upcoming Grid resources to run AliEn-managed jobs and store the produced data, the problem of AliEn-EDG interoperability was addressed and an in-terface was designed. One or more EDG (European Data Grid) User Interface machines run the AliEn software suite (Cluster Monitor, Storage Element and Computing Element), and act as interface nodes between the systems. An EDG Resource Broker is seen by the AliEn server as a single Computing Element, while the EDG storage is seen by AliEn as a single, large Storage Element; files produced in EDG sites are registered in both the EDG Replica Catalogue and in the AliEn Data Catalogue, thus ensuring accessibility from both worlds. In fact, both registrations are required: the AliEn one is used for the data management, the EDG one to guarantee the integrity and...

Energetics of edge oxidization of graphene nanoribbons

Science.gov (United States)

Yasuma, Airi; Yamanaka, Ayaka; Okada, Susumu

2018-06-01

On the basis of the density functional theory, we studied the geometries and energetics of O atoms adsorbed on graphene edges for simulating the initial stage of the edge oxidization of graphene. Our calculations showed that oxygen atoms are preferentially adsorbed onto the graphene edges with the zigzag portion, resulting in a large adsorption energy of about 5 eV. On the other hand, the edges with armchair shape are rarely oxidized, or the oxidization causes substantial structural reconstructions, because of the stable covalent bond at the armchair edge with the triple bond nature. Furthermore, the energetics sensitively depends on the edge angles owing to the inhomogeneity of the charge density at the edge atomic sites.

Acyclicity in edge-colored graphs

DEFF Research Database (Denmark)

Gutin, Gregory; Jones, Mark; Sheng, Bin

2017-01-01

A walk W in edge-colored graphs is called properly colored (PC) if every pair of consecutive edges in W is of different color. We introduce and study five types of PC acyclicity in edge-colored graphs such that graphs of PC acyclicity of type i is a proper superset of graphs of acyclicity of type i......+1, i=1,2,3,4. The first three types are equivalent to the absence of PC cycles, PC closed trails, and PC closed walks, respectively. While graphs of types 1, 2 and 3 can be recognized in polynomial time, the problem of recognizing graphs of type 4 is, somewhat surprisingly, NP-hard even for 2-edge-colored...... graphs (i.e., when only two colors are used). The same problem with respect to type 5 is polynomial-time solvable for all edge-colored graphs. Using the five types, we investigate the border between intractability and tractability for the problems of finding the maximum number of internally vertex...

Edge-effect interactions in fragmented and patchy landscapes.

Science.gov (United States)

Porensky, Lauren M; Young, Truman P

2013-06-01

Ecological edges are increasingly recognized as drivers of landscape patterns and ecosystem processes. In fragmented and patchy landscapes (e.g., a fragmented forest or a savanna with scattered termite mounds), edges can become so numerous that their effects pervade the entire landscape. Results of recent studies in such landscapes show that edge effects can be altered by the presence or proximity of other nearby edges. We considered the theoretical significance of edge-effect interactions, illustrated various landscape configurations that support them and reviewed existing research on this topic. Results of studies from a variety of locations and ecosystem types show that edge-effect interactions can have significant consequences for ecosystems and conservation, including higher tree mortality rates in tropical rainforest fragments, reduced bird densities in grassland fragments, and bush encroachment and reduced wildlife densities in a tropical savanna. To clarify this underappreciated concept and synthesize existing work, we devised a conceptual framework for edge-effect interactions. We first worked to reduce terminological confusion by clarifying differences among terms such as edge intersection and edge interaction. For cases in which nearby edge effects interact, we proposed three possible forms of interaction: strengthening (presence of a second edge causes stronger edge effects), weakening (presence of a second edge causes weaker edge effects), and emergent (edge effects change completely in the presence of a second edge). By clarifying terms and concepts, this framework enables more precise descriptions of edge-effect interactions and facilitates comparisons of results among disparate study systems and response variables. A better understanding of edge-effect interactions will pave the way for more appropriate modeling, conservation, and management in complex landscapes. © 2013 Society for Conservation Biology.

Human vision model in relation to characteristics of shapes for the Mach band effect.

Science.gov (United States)

Wu, Bo-Wen; Fang, Yi-Chin

2015-10-01

For human vision to recognize the contours of objects means that, as the contrast variation at the object's edges increases, so will the Mach band effect of human vision. This paper more deeply investigates the relationship between changes in the contours of an object and the Mach band effect of human vision. Based on lateral inhibition and the Mach band effect, we studied subjects' eyes as they watched images of different shapes under a fixed brightness at 34  cd/m2, with changes of contrast and spatial frequency. Three types of display were used: a television, a computer monitor, and a projector. For each display used, we conducted a separate experiment for each shape. Although the maximum values for the contrast sensitivity function curves of the displays were different, their variations were minimal. As the spatial frequency changed, the diminishing effect of the different lines also was minimal. However, as the shapes at the contour intersections were modified by the Mach band effect, a greater degree of variation occurred. In addition, as the spatial frequency at a contour intersection increased, the Mach band effect became lower, along with changes in the corresponding contrast sensitivity function curve. Our experimental results on the characteristics of human vision have led to what we believe is a new vision model based on tests with different shapes. This new model may be used for future development and implementation of an artificial vision system.

A class of monolayer metal halogenides MX{sub 2}: Electronic structures and band alignments

Energy Technology Data Exchange (ETDEWEB)

Lu, Feng; Wang, Weichao; Luo, Xiaoguang; Cheng, Yahui; Dong, Hong; Liu, Hui; Wang, Wei-Hua, E-mail: whwangnk@nankai.edu.cn [Department of Electronics and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300071 (China); Xie, Xinjian [School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China)

2016-03-28

With systematic first principles calculations, a class of monolayer metal halogenides MX{sub 2} (M = Mg, Ca, Zn, Cd, Ge, Pb; M = Cl, Br, I) has been proposed. Our study indicates that these monolayer materials are semiconductors with the band gaps ranging from 2.03 eV of ZnI{sub 2} to 6.08 eV of MgCl{sub 2}. Overall, the band gap increases with the increase of the electronegativity of the X atom or the atomic number of the metal M. Meanwhile, the band gaps of monolayer MgX{sub 2} (X = Cl, Br) are direct while those of other monolayers are indirect. Based on the band edge curvatures, the derived electron (m{sub e}) and hole (m{sub h}) effective masses of MX{sub 2} monolayers are close to their corresponding bulk values except that the m{sub e} of CdI{sub 2} is three times larger and the m{sub h} for PbI{sub 2} is twice larger. Finally, the band alignments of all the studied MX{sub 2} monolayers are provided using the vacuum level as energy reference. These theoretical results may not only introduce the monolayer metal halogenides family MX{sub 2} into the emerging two-dimensional materials, but also provide insights into the applications of MX{sub 2} in future electronic, visible and ultraviolet optoelectronic devices.

Optical band gap energy and ur bach tail of CdS:Pb2+ thin films

Energy Technology Data Exchange (ETDEWEB)

Chavez, M.; Juarez, H.; Pacio, M. [Universidad Autonoma de Puebla, Instituto de Ciencias, Centro de Investigacion en Dispositivos Semiconductores, Av. 14 Sur, Col. Jardines de San Manuel, Ciudad Universitaria, Puebla, Pue. (Mexico); Gutierrez, R.; Chaltel, L.; Zamora, M.; Portillo, O. [Universidad Autonoma de Puebla, Facultad de Ciencias Quimicas, Laboratorio de Materiales, Apdo. Postal 1067, 72001 Puebla, Pue. (Mexico); Mathew, X., E-mail: osporti@yahoo.mx [UNAM, Instituto de Energias Renovables, Temixco, Morelos (Mexico)

2016-11-01

Pb S-doped CdS nano materials were successfully synthesized using chemical bath. Transmittance measurements were used to estimate the optical band gap energy. Tailing in the band gap was observed and found to obey Ur bach rule. The diffraction X-ray show that the size of crystallites is in the ∼33 nm to 12 nm range. The peaks belonging to primary phase are identified at 2θ = 26.5 degrees Celsius and 2θ = 26.00 degrees Celsius corresponding to CdS and Pb S respectively. Thus, a shift in maximum intensity peak from 2θ = 26.4 to 28.2 degrees Celsius is clear indication of possible transformation of cubic to hexagonal phase. Also peaks at 2θ = 13.57, 15.9 degrees Celsius correspond to lead perchlorate thiourea. The effects on films thickness and substrate doping on the band gap energy and the width on tail were investigated. Increasing doping give rise to a shift in optical absorption edge ∼0.4 eV. (Author)

Are quantum spin Hall edge modes more resilient to disorder, sample geometry and inelastic scattering than quantum Hall edge modes?

Science.gov (United States)

Mani, Arjun; Benjamin, Colin

2016-04-13

On the surface of 2D topological insulators, 1D quantum spin Hall (QSH) edge modes occur with Dirac-like dispersion. Unlike quantum Hall (QH) edge modes, which occur at high magnetic fields in 2D electron gases, the occurrence of QSH edge modes is due to spin-orbit scattering in the bulk of the material. These QSH edge modes are spin-dependent, and chiral-opposite spins move in opposing directions. Electronic spin has a larger decoherence and relaxation time than charge. In view of this, it is expected that QSH edge modes will be more robust to disorder and inelastic scattering than QH edge modes, which are charge-dependent and spin-unpolarized. However, we notice no such advantage accrues in QSH edge modes when subjected to the same degree of contact disorder and/or inelastic scattering in similar setups as QH edge modes. In fact we observe that QSH edge modes are more susceptible to inelastic scattering and contact disorder than QH edge modes. Furthermore, while a single disordered contact has no effect on QH edge modes, it leads to a finite charge Hall current in the case of QSH edge modes, and thus a vanishing of the pure QSH effect. For more than a single disordered contact while QH states continue to remain immune to disorder, QSH edge modes become more susceptible--the Hall resistance for the QSH effect changes sign with increasing disorder. In the case of many disordered contacts with inelastic scattering included, while quantization of Hall edge modes holds, for QSH edge modes a finite charge Hall current still flows. For QSH edge modes in the inelastic scattering regime we distinguish between two cases: with spin-flip and without spin-flip scattering. Finally, while asymmetry in sample geometry can have a deleterious effect in the QSH case, it has no impact in the QH case.

Are quantum spin Hall edge modes more resilient to disorder, sample geometry and inelastic scattering than quantum Hall edge modes?

International Nuclear Information System (INIS)

Mani, Arjun; Benjamin, Colin

2016-01-01

On the surface of 2D topological insulators, 1D quantum spin Hall (QSH) edge modes occur with Dirac-like dispersion. Unlike quantum Hall (QH) edge modes, which occur at high magnetic fields in 2D electron gases, the occurrence of QSH edge modes is due to spin–orbit scattering in the bulk of the material. These QSH edge modes are spin-dependent, and chiral-opposite spins move in opposing directions. Electronic spin has a larger decoherence and relaxation time than charge. In view of this, it is expected that QSH edge modes will be more robust to disorder and inelastic scattering than QH edge modes, which are charge-dependent and spin-unpolarized. However, we notice no such advantage accrues in QSH edge modes when subjected to the same degree of contact disorder and/or inelastic scattering in similar setups as QH edge modes. In fact we observe that QSH edge modes are more susceptible to inelastic scattering and contact disorder than QH edge modes. Furthermore, while a single disordered contact has no effect on QH edge modes, it leads to a finite charge Hall current in the case of QSH edge modes, and thus a vanishing of the pure QSH effect. For more than a single disordered contact while QH states continue to remain immune to disorder, QSH edge modes become more susceptible—the Hall resistance for the QSH effect changes sign with increasing disorder. In the case of many disordered contacts with inelastic scattering included, while quantization of Hall edge modes holds, for QSH edge modes a finite charge Hall current still flows. For QSH edge modes in the inelastic scattering regime we distinguish between two cases: with spin-flip and without spin-flip scattering. Finally, while asymmetry in sample geometry can have a deleterious effect in the QSH case, it has no impact in the QH case. (paper)

Magnetism of Nanographene-Based Microporous Carbon and Its Applications: Interplay of Edge Geometry and Chemistry Details in the Edge State

Science.gov (United States)

Enoki, Toshiaki; Kiguchi, Manabu

2018-03-01

This paper is a contribution to the Physical Review Applied collection in memory of Mildred S. Dresselhaus. Nanographenes have important edge geometry dependence in their electronic structures. In armchair edges, electron wave interference works to contribute to energetic stability. Meanwhile, zigzag edges possess an edge-localized and spin-polarized nonbonding edge state, which causes electronic, magnetic, and chemical activities. In addition to the geometry dependence, the electronic structures are seriously affected by edge chemistry details. The edge chemistry dependence together with edge geometries on the electronic structures are discussed with samples of randomly networked nanographenes (microporous activated carbon fibers) in pristine state and under high-temperature annealing. In the pristine sample with the edges oxidized in ambient atmospheric conditions, the edge state, which is otherwise unstable, can be stabilized because of the charge transfer from nanographene to terminating oxygen. Nanographene, whose edges consist of a combination of magnetic zigzag edges and nonmagnetic armchair edges, is found to be ferrimagnetic with a nonzero net magnetic moment created under the interplay between a strong intrazigzag-edge ferromagnetic interaction and intermediate-strength interzigzag-edge antiferromagnetic-ferromagnetic interaction. At heat-treatment temperatures just below the fusion start (approximately 1500 K), the edge-terminating structure is changed from oxygen-containing groups to hydrogen in the nanographene network. Additionally, hydrogen-terminated zigzag edges, which are present as the majority and chemically unstable, play a triggering role in fusion above 1500 K. The fusion start brings about an insulator-to-metal transition at TI -M˜1500 K . Local fusions taking place percolatively between nanographenes work to expand the π -bond network, eventually resulting in the development of antiferromagnetic short-range order toward spin glass in the

Improving color constancy by photometric edge weighting

NARCIS (Netherlands)

Gijsenij, A.; Gevers, T.; van de Weijer, J.

2012-01-01

Edge-based color constancy methods make use of image derivatives to estimate the illuminant. However, different edge types exist in real-world images, such as material, shadow, and highlight edges. These different edge types may have a distinctive influence on the performance of the illuminant

Dual-Mode Dual-Band Microstrip Bandpass Filter Based on Fourth Iteration T-Square Fractal and Shorting Pin

Directory of Open Access Journals (Sweden)

E. S. Ahmed

2012-06-01

Full Text Available A new class of dual mode microstrip fractal resonator is proposed and developed for miniaturization of the dual band bandpass filter. The perimeter of the proposed resonator is increased by employing fourth iteration T-square fractal shape. Consequently the lower resonant frequency of the filter is decreased without increasing the usable space. The self similarity of the usable structure enables it to produce the two degenerate modes which are coupled using the proper perturbation technique. The shorting pin is placed at the null in the surface current distribution at the center of the resonator. This shorting pin is coactively coupled to the resonant circuit of the resonator, effectively coupled to the lower degenerate mode and reduces the lower edge band resonant frequency. By adjusting the resonator dimensions and the size of the shorting pin, the resonant frequency and the out-of-band rejection around the transmission bands can be controlled to meet the design requirements. The simulated response of the designed filter has two transmission bands, the first band is from 2.34-3.65 GHz with resonant frequencies at 2.47GHz and 3.55GHz, the second band is from 4.37-5.324GHz with resonant frequencies at 4.5GHz and 5.13GHz. In the pass bands, the group delay is less than 0.65 ns. The proposed filter can be applied to WLAN (2.4 GHz and 5.2 GHz and WiMAX (3.5 GHz and Bluetooth and ZigBee (4.9 GHz.

Junction-type photonic crystal waveguides for notch- and pass-band filtering

KAUST Repository

Shahid, Naeem

2011-01-01

Evolution of the mode gap and the associated transmission mini stop-band (MSB) as a function of photonic crystal (PhC) waveguide width is theoretically and experimentally investigated. The change of line-defect width is identified to be the most appropriate way since it offers a wide MSB wavelength tuning range. A high transmission narrow-band filter is experimentally demonstrated in a junction-type waveguide composed of two PhC waveguides with slightly different widths. The full width at half maximum is 5.6 nm; the peak transmission is attenuated by only ∼5 dB and is ∼20 dB above the MSBs. Additionally, temperature tuning of the filter were also performed. The results show red-shift of the transmission peak and the MSB edges with a gradient of dλ/dT = 0.1 nm/°C. It is proposed that the transmission MSBs in such junction-type cascaded PhC waveguides can be used to obtain different types of filters. © 2011 Optical Society of America.

Hydrogen bonding interaction of small acetaldehyde clusters studied with core-electron excitation spectroscopy in the oxygen K-edge region

Science.gov (United States)

Tabayashi, K.; Chohda, M.; Yamanaka, T.; Tsutsumi, Y.; Takahashi, O.; Yoshida, H.; Taniguchi, M.

2010-06-01

In order to examine inner-shell electron excitation spectra of molecular clusters with strong multipole interactions, excitation spectra and time-of-flight (TOF) fragment-mass spectra of small acetaldehyde (AA) clusters have been studied under the beam conditions. The TOF spectra at the oxygen K-edge region showed an intense growth of the protonated clusters, MnH+ (M=CH3CHO) in the cluster beams. "cluster-specific" excitation spectra could be generated by monitoring partial-ion-yields of the protonated clusters. The most intense band of O1s→π*CO was found to shift to a higher energy by 0.15 eV relative to the monomer band upon clusterization. X-ray absorption spectra (XAS) were also calculated for the representative dimer configurations using a computer modelling program based on the density functional theory. The XAS prediction for the most stable (non-planar) configuration was found to give a close comparison with the cluster-band shift observed. The band shift was interpreted as being due to the HOMO-LUMO interaction within the complex where a contribution of vibrationally blue-shifting hydrogen bonding could be identified.

Optimized optical devices for edge-coupling-enabled silicon photonics platform

Science.gov (United States)

Png, Ching Eng; Ang, Thomas Y. L.; Ong, Jun Rong; Lim, Soon Thor; Sahin, Ezgi; Chen, G. F. R.; Tan, D. T. H.; Guo, Tina X.; Wang, Hong

2018-02-01

We present a library of high-performance passive and active silicon photonic devices at the C-band that is specifically designed and optimized for edge-coupling-enabled silicon photonics platform. These devices meet the broadband (100 nm), low-loss (= 25 Gb/s), and polarization diversity requirements (TE and TM polarization extinction ratio beam splitters (PBSs), and high-speed modulators are some of the devices within our library. In particular, we have designed and fabricated inverse taper fiber-to-waveguide edge couplers of tip widths ranging from 120 nm to 200 nm, and we obtained a low coupling loss of 1.80+/-0.28 dB for 160 nm tip width. To achieve polarization diversity operation for inverse tapers, we have experimentally realized different designs of polarization beam splitters (PBS). Our optimized PBS has a measured extinction ratio of <= 25 dB for both the quasiTE modes, and quasi-TM modes. Additionally, a broadband (100 nm) directional coupler with a 50/50 power splitting ratio was experimentally realized on a small footprint of 20×3 μm2 . Last but not least, high-speed silicon modulators with a range of carrier doping concentrations and offset of the PN junction can be used to optimise the modulation efficiency, and insertion losses for operation at 25 GHz.

Unified one-band Hubbard model for magnetic and electronic spectra of the parent compounds of cuprate superconductors

Science.gov (United States)

Dalla Piazza, B.; Mourigal, M.; Guarise, M.; Berger, H.; Schmitt, T.; Zhou, K. J.; Grioni, M.; Rønnow, H. M.

2012-03-01

Using low-energy projection of the one-band t-t'-t'' Hubbard model we derive an effective spin Hamiltonian and its spin-wave expansion to order 1/S. We fit the spin-wave dispersion of several parent compounds to the high-temperature superconducting cuprates La2CuO4, Sr2CuO2Cl2, and Bi2Sr2YCu2O8. Our accurate quantitative determination of the one-band Hubbard model parameters allows prediction and comparison to experimental results. Among those we discuss the two-magnon Raman peak line shape, the K-edge resonant inelastic x-ray scattering 500-meV peak, and the high-energy kink in the angle-resolved photoemission spectroscopy quasiparticle dispersion, also known as the waterfall feature.

Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction

KAUST Repository

Zhang, Chendong

2016-01-18

Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal dichalcogenides thin films have sensitive layer dependence, it is natural to create lateral heterojunctions (HJs) using the same materials with different thicknesses. Here we show the real space image of electronic structures across the bilayer–monolayer interface in MoSe2 and WSe2, using scanning tunnelling microscopy and spectroscopy. Most bilayer–monolayer HJs are found to have a zig-zag-orientated interface, and the band alignment of such atomically sharp HJs is of type-I with a well-defined interface mode that acts as a narrower-gap quantum wire. The ability to utilize such commonly existing thickness terraces as lateral HJs is a crucial addition to the tool set for device applications based on atomically thin transition metal dichalcogenides, with the advantage of easy and flexible implementation.

How Forest Inhomogeneities Affect the Edge Flow

DEFF Research Database (Denmark)

Boudreault, Louis-Étienne; Dupont, Sylvain; Bechmann, Andreas

2016-01-01

Most of our knowledge on forest-edge flows comes from numerical and wind-tunnel experiments where canopies are horizontally homogeneous. To investigate the impact of tree-scale heterogeneities (>1 m) on the edge-flow dynamics, the flow in an inhomogeneous forest edge on Falster island in Denmark...... is investigated using large-eddy simulation. The three-dimensional forest structure is prescribed in the model using high resolution helicopter-based lidar scans. After evaluating the simulation against wind measurements upwind and downwind of the forest leading edge, the flow dynamics are compared between...... the scanned forest and an equivalent homogeneous forest. The simulations reveal that forest inhomogeneities facilitate flow penetration into the canopy from the edge, inducing important dispersive fluxes in the edge region as a consequence of the flow spatial variability. Further downstream from the edge...

Crystallographic study of grain refinement in aluminum alloys using the edge-to-edge matching model

International Nuclear Information System (INIS)

Zhang, M.-X.; Kelly, P.M.; Easton, M.A.; Taylor, J.A.

2005-01-01

The edge-to-edge matching model for describing the interfacial crystallographic characteristics between two phases that are related by reproducible orientation relationships has been applied to the typical grain refiners in aluminum alloys. Excellent atomic matching between Al 3 Ti nucleating substrates, known to be effective nucleation sites for primary Al, and the Al matrix in both close packed directions and close packed planes containing these directions have been identified. The crystallographic features of the grain refiner and the Al matrix are very consistent with the edge-to-edge matching model. For three other typical grain refiners for Al alloys, TiC (when a = 0.4328 nm), TiB 2 and AlB 2 , the matching only occurs between the close packed directions in both phases and between the second close packed plane of the Al matrix and the second close packed plane of the refiners. According to the model, it is predicted that Al 3 Ti is a more powerful nucleating substrate for Al alloy than TiC, TiB 2 and AlB 2 . This agrees with the previous experimental results. The present work shows that the edge-to-edge matching model has the potential to be a powerful tool in discovering new and more powerful grain refiners for Al alloys

Electron spin polarization induced by spin Hall effect in semiconductors with a linear in the momentum spin-orbit splitting of conduction band

OpenAIRE

Korenev, V. L.

2005-01-01

It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the edge of the sample oscillates in space even in the absence of an external magnetic field.

Edge Cut Domination, Irredundance, and Independence in Graphs

OpenAIRE

Fenstermacher, Todd; Hedetniemi, Stephen; Laskar, Renu

2016-01-01

An edge dominating set $F$ of a graph $G=(V,E)$ is an \\textit{edge cut dominating set} if the subgraph $\\langle V,G-F \\rangle$ is disconnected. The \\textit{edge cut domination number} $\\gamma_{ct}(G)$ of $G$ is the minimum cardinality of an edge cut dominating set of $G.$ In this paper we study the edge cut domination number and investigate its relationships with other parameters of graphs. We also introduce the properties edge cut irredundance and edge cut independence.

DAVs: Red Edge and Outbursts

Science.gov (United States)

Luan, Jing

2018-04-01

As established by ground based surveys, white dwarfs with hydrogen atmospheres pulsate as they cool across the temperature range, 12500Kred edge is a two-decade old puzzle. Recently, Kepler discovered a number of cool DAVs exhibiting sporadic outbursts separated by days, each lasting several hours, and releasing \\sim 10^{33}-10^{34} {erg}. We provide quantitative explanations for both the red edge and the outbursts. The minimal frequency for overstable modes rises abruptly near the red edge. Although high frequency overstable modes exist below the red edge, their photometric amplitudes are generally too small to be detected by ground based observations. Nevertheless, these overstable parent modes can manifest themselves through nonlinear mode couplings to damped daughter modes which generate limit cycles giving rise to photometric outbursts.

Transcatheter Treatment of Tricuspid Regurgitation Using Edge-to-Edge Repair: Procedural Results, Clinical Implications and Predictors for Success.

Science.gov (United States)

Lurz, Philipp; Besler, Christian; Noack, Thilo; Forner, Anna Flo; Bevilacqua, Carmine; Seeburger, Joerg; Rommel, Karl-Philipp; Blazek, Stephan; Hartung, Philipp; Zimmer, Marion; Mohr, Friedrich; Schuler, Gerhard; Linke, Axel; Ender, Joerg; Thiele, Holger

2018-04-10

To analyze the feasibility, safety and effectiveness of Tricuspid valve (TV) repair using the MitraClip system in patients at high surgical risk. Forty-two elderly high-risk patients (76.8±7.3 years, EuroScore II 8.1±5.7) with isolated TR or combined TR and mitral regurgitation (MR) underwent edge-to-edge repair of the TV (n=11) or combined edge-to-edge repair of the TV and mitral valve (n=31). Procedural details, success rate, impact on TR severity and predictors for success at 30 day follow-up were analyzed. Successful edge-to-edge repair of TR was achieved in 35/42 patients (83%, 68 clips in total, 94% in the anteroseptal commissure, 6% in the posteroseptal commissure). In 5 patients, grasping of the leaflets was impossible and two patients had no decrease in TR after clipping. In those with procedural success, clipping of the TV led to a reduction in effective regurgitant orifice area by -62,5 % (from 0.8±0.4 to 0.3±0.2 cm2; pEdge-to-edge repair of the TV is feasible with promising reduction in TR, which could result in clinical improvement.

Contributions of conduction band offset to the enhanced separation efficiency of photoinduced charges for SrTiO3/Bi2O3 heterojunction semiconductor

International Nuclear Information System (INIS)

Zhang, Zhenlong; Zhu, Jichun; Li, Shengjun; Mao, Yanli

2014-01-01

SrTiO 3 /Bi 2 O 3 heterojunction semiconductor was prepared and characterized by X-ray diffraction, UV–vis absorption spectrum, and scanning electron microscope, surface photovoltage spectroscopy, and photoluminescence spectroscopy. The surface photovoltage spectra indicate that the separation efficiency of photoinduced charges for SrTiO 3 /Bi 2 O 3 was enhanced compared with that of SrTiO 3 or Bi 2 O 3 . The energy band diagram of SrTiO 3 /Bi 2 O 3 heterojunction was directly determined with X-ray photoelectron spectroscopy, and the conduction band offset between SrTiO 3 and Bi 2 O 3 was quantified to be 0.28±0.03 eV. The photoluminescence spectra display that the recombination rate of photoinduced carriers for SrTiO 3 /Bi 2 O 3 decreases compared with that of SrTiO 3 or Bi 2 O 3 , which is mainly due to the energy levels matching between them. Therefore the enhanced separation efficiency of photoinduced charges is resulting from the energy difference between the conduction band edges of SrTiO 3 and Bi 2 O 3 . -- Graphical abstract: Enhanced separation efficiency for SrTiO 3 /Bi 2 O 3 is resulting from the energy difference between the conduction band edges. Highlights: ●Heterojunction semiconductor of SrTiO 3 /Bi 2 O 3 was prepared. ●SrTiO 3 /Bi 2 O 3 presents enhanced separation efficiency. ●Conduction band offset between SrTiO 3 and Bi 2 O 3 is quantified. ●Recombination rate of SrTiO 3 /Bi 2 O 3 decreases compared with single phases

Design of Miniaturized Dual-Band Microstrip Antenna for WLAN Application

Science.gov (United States)

Yang, Jiachen; Wang, Huanling; Lv, Zhihan; Wang, Huihui

2016-01-01

Wireless local area network (WLAN) is a technology that combines computer network with wireless communication technology. The 2.4 GHz and 5 GHz frequency bands in the Industrial Scientific Medical (ISM) band can be used in the WLAN environment. Because of the development of wireless communication technology and the use of the frequency bands without the need for authorization, the application of WLAN is becoming more and more extensive. As the key part of the WLAN system, the antenna must also be adapted to the development of WLAN communication technology. This paper designs two new dual-frequency microstrip antennas with the use of electromagnetic simulation software—High Frequency Structure Simulator (HFSS). The two antennas adopt ordinary FR4 material as a dielectric substrate, with the advantages of low cost and small size. The first antenna adopts microstrip line feeding, and the antenna radiation patch is composed of a folded T-shaped radiating dipole which reduces the antenna size, and two symmetrical rectangular patches located on both sides of the T-shaped radiating patch. The second antenna is a microstrip patch antenna fed by coaxial line, and the size of the antenna is diminished by opening a stepped groove on the two edges of the patch and a folded slot inside the patch. Simulation experiments prove that the two designed antennas have a higher gain and a favourable transmission characteristic in the working frequency range, which is in accordance with the requirements of WLAN communication. PMID:27355954

Itinerant ferromagnetism in the As 4p conduction band of Ba_{0.6}K_{0.4}Mn_{2}As_{2} identified by X-ray magnetic circular dichroism.

Science.gov (United States)

Ueland, B G; Pandey, Abhishek; Lee, Y; Sapkota, A; Choi, Y; Haskel, D; Rosenberg, R A; Lang, J C; Harmon, B N; Johnston, D C; Kreyssig, A; Goldman, A I

2015-05-29

X-ray magnetic circular dichroism (XMCD) measurements on single-crystal and powder samples of Ba_{0.6}K_{0.4}Mn_{2}As_{2} show that the ferromagnetism below T_{C}≈100  K arises in the As 4p conduction band. No XMCD signal is observed at the Mn x-ray absorption edges. Below T_{C}, however, a clear XMCD signal is found at the As K edge which increases with decreasing temperature. The XMCD signal is absent in data taken with the beam directed parallel to the crystallographic c axis indicating that the orbital magnetic moment lies in the basal plane of the tetragonal lattice. These results show that the previously reported itinerant ferromagnetism is associated with the As 4p conduction band and that distinct local-moment antiferromagnetism and itinerant ferromagnetism with perpendicular easy axes coexist in this compound at low temperature.

Energetics of highly kinked step edges

NARCIS (Netherlands)

Zandvliet, Henricus J.W.

2010-01-01

We have determined the step edge free energy, the step edge stiffness and dimensionless inverse step edge stiffness of the highly kinked < 010> oriented step on a (001) surface of a simple square lattice within the framework of a solid-on-solid model. We have found an exact expression for the step

Edge Fracture in Complex Fluids.

Science.gov (United States)

Hemingway, Ewan J; Kusumaatmaja, Halim; Fielding, Suzanne M

2017-07-14

We study theoretically the edge fracture instability in sheared complex fluids, by means of linear stability analysis and direct nonlinear simulations. We derive an exact analytical expression for the onset of edge fracture in terms of the shear-rate derivative of the fluid's second normal stress difference, the shear-rate derivative of the shear stress, the jump in shear stress across the interface between the fluid and the outside medium (usually air), the surface tension of that interface, and the rheometer gap size. We provide a full mechanistic understanding of the edge fracture instability, carefully validated against our simulations. These findings, which are robust with respect to choice of rheological constitutive model, also suggest a possible route to mitigating edge fracture, potentially allowing experimentalists to achieve and accurately measure flows stronger than hitherto possible.

Edge Modeling by Two Blur Parameters in Varying Contrasts.

Science.gov (United States)

Seo, Suyoung

2018-06-01

This paper presents a method of modeling edge profiles with two blur parameters, and estimating and predicting those edge parameters with varying brightness combinations and camera-to-object distances (COD). First, the validity of the edge model is proven mathematically. Then, it is proven experimentally with edges from a set of images captured for specifically designed target sheets and with edges from natural images. Estimation of the two blur parameters for each observed edge profile is performed with a brute-force method to find parameters that produce global minimum errors. Then, using the estimated blur parameters, actual blur parameters of edges with arbitrary brightness combinations are predicted using a surface interpolation method (i.e., kriging). The predicted surfaces show that the two blur parameters of the proposed edge model depend on both dark-side edge brightness and light-side edge brightness following a certain global trend. This is similar across varying CODs. The proposed edge model is compared with a one-blur parameter edge model using experiments of the root mean squared error for fitting the edge models to each observed edge profile. The comparison results suggest that the proposed edge model has superiority over the one-blur parameter edge model in most cases where edges have varying brightness combinations.

A New Developed GIHS-BT-SFIM Fusion Method Based On Edge and Class Data

Directory of Open Access Journals (Sweden)

S. Dehnavi

2013-09-01

Full Text Available The objective of image fusion (or sometimes pan sharpening is to produce a single image containing the best aspects of the source images. Some desirable aspects are high spatial resolution and high spectral resolution. With the development of space borne imaging sensors, a unified image fusion approach suitable for all employed imaging sources becomes necessary. Among various image fusion methods, intensity-hue-saturation (IHS and Brovey Transforms (BT can quickly merge huge amounts of imagery. However they often face color distortion problems with fused images. The SFIM fusion is one of the most frequently employed approaches in practice to control the tradeoff between the spatial and spectral information. In addition it preserves more spectral information but suffer more spatial information loss. Its effectiveness is heavily depends on the filter design. In this work, two modifications were tested to improve the spectral quality of the images and also investigating class-based fusion results. First, a Generalized Intensity-Hue-Saturation (GIHS, Brovey Transform (BT and smoothing-filter based intensity modulation (SFIM approach was implemented. This kind of algorithm has shown computational advantages among other fusion methods like wavelet, and can be extended to different number of bands as in literature discussed. The used IHS-BT-SFIM algorithm incorporates IHS, IHS-BT, BT, BT-SFIM and SFIM methods by two adjustable parameters. Second, a method was proposed to plus edge information in previous GIHS_BT_SFIM and edge enhancement by panchromatic image. Adding panchromatic data to images had no much improvement. Third, an edge adaptive GIHS_BT_SFIM was proposed to enforce fidelity away from the edges. Using MS image off edges has shown spectral improvement in some fusion methods. Fourth, a class based fusion was tested, which tests different coefficients for each method due to its class. The best parameters for vegetated areas was k1 = 0.6, k2

Reward banding to determine reporting rate of recovered mourning dove bands

Science.gov (United States)

Tomlinson, R.E.

1968-01-01

Reward bands placed on the other leg of certain regularly banded immature mourning doves (Zenaidura macroura) were used to develop information on reporting rates of recovered dove bands. Reports from 15 widely separated sections of the United States showed considerable variation in recovery rate of doves both with and without reward bands. The overall percentages of banded doves that were reported as recovered were 9.69% for those with reward bands and 3.83% for controls. The bandreporting rate for states influenced by publicity was 66%; that for states not influenced was 32%.

Six-month outcome after transcatheter edge-to-edge repair of severe tricuspid regurgitation in patients with heart failure.

Science.gov (United States)

Orban, Mathias; Besler, Christian; Braun, Daniel; Nabauer, Michael; Zimmer, Marion; Orban, Martin; Noack, Thilo; Mehilli, Julinda; Hagl, Christian; Seeburger, Joerg; Borger, Michael; Linke, Axel; Thiele, Holger; Massberg, Steffen; Ender, Joerg; Lurz, Philipp; Hausleiter, Jörg

2018-06-01

Severe tricuspid regurgitation (TR) is common in patients with right-sided heart failure (HF) and causes substantial morbidity and mortality. Treatment options beyond medical therapy are limited for high-risk patients. Transcatheter edge-to-edge tricuspid valve (TV) repair showed procedural safety and short-term efficacy. Impact on mid-term outcome is unclear. This dual-centre observational study evaluates the mid-term safety, efficacy and clinical outcome after edge-to-edge TV repair for severe TR in patients with HF. Overall, 50 patients with right-sided HF and severe TR were treated with the transcatheter edge-to-edge repair technique; 14 patients were treated for isolated TR and 36 patients for combined mitral regurgitation (MR) and TR. At 6-month follow-up (available for 98% of patients), a persistent reduction of at least one echocardiographic TR grade was achieved in 90% of patients and New York Heart Association class improved in 79% of patients. The 6-minute walk distance increased by 44% (+84 m, P edge-to-edge TV repair for severe TR is safe and effective in reducing TR. It appears to be associated with improved clinical outcome in the majority of patients. © 2018 The Authors. European Journal of Heart Failure © 2018 European Society of Cardiology.

Computed a multiple band metamaterial absorber and its application based on the figure of merit value

Science.gov (United States)

Chen, Chao; Sheng, Yuping; Jun, Wang

2018-01-01

A high performed multiple band metamaterial absorber is designed and computed through the software Ansofts HFSS 10.0, which is constituted with two kinds of separated metal particles sub-structures. The multiple band absorption property of the metamaterial absorber is based on the resonance of localized surface plasmon (LSP) modes excited near edges of metal particles. The damping constant of gold layer is optimized to obtain a near-perfect absorption rate. Four kinds of dielectric layers is computed to achieve the perfect absorption perform. The perfect absorption perform of the metamaterial absorber is enhanced through optimizing the structural parameters (R = 75 nm, w = 80 nm). Moreover, a perfect absorption band is achieved because of the plasmonic hybridization phenomenon between LSP modes. The designed metamaterial absorber shows high sensitive in the changed of the refractive index of the liquid. A liquid refractive index sensor strategy is proposed based on the computed figure of merit (FOM) value of the metamaterial absorber. High FOM values (116, 111, and 108) are achieved with three liquid (Methanol, Carbon tetrachloride, and Carbon disulfide).

Tuning carrier mobility of phosphorene nanoribbons by edge passivation and strain

International Nuclear Information System (INIS)

Zhang, Xiaoou; Li, Qingfang; Xu, Bo; Wan, Bo; Yin, Jiang; Wan, X.G.

2016-01-01

Using first-principles calculations, we have studied the effects of different edge passivation groups on the carrier mobility of the phosphorene nanoribbons (PNRs) and strain effect on the transport property in passivated PNRs. The numerical results show that the size-dependent carrier mobility of passivated PNRs is not very sensitive to the different passivation groups, such as hydrogen (H), fluorine (F) and chlorine (Cl), but strongly associated with the orientation of nanoribbons. Passivated armchair-PNR has much larger carrier mobility than passivated zigzag-PNR at the similar ribbon width. With increasing ribbon width, the electron mobility of passivated PNRs can be further enhanced. We also find that the anisotropy of carrier mobility in passivated PNRs can be reversed by applying tensile strain resulting from order switching of the conduction bands around Fermi level.

Fabrication of Transition Edge Sensor Microcalorimeters for X-Ray Focal Planes

Science.gov (United States)

Chervenak, James A.; Adams, Joseph S.; Audley, Heather; Bandler, Simon R.; Betancourt-Martinez, Gabriele; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline; Lee, Sang Jun;

Tuning carrier mobility of phosphorene nanoribbons by edge passivation and strain

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xiaoou [National Laboratory of Solid State Microstructures, College of Physics, Nanjing University, Nanjing 210093 (China); Li, Qingfang, E-mail: qingfangli@nuist.edu.cn [National Laboratory of Solid State Microstructures, College of Physics, Nanjing University, Nanjing 210093 (China); Department of Physics, Nanjing University of Information Science & Technology, Nanjing 210044 (China); Xu, Bo, E-mail: xubonju@gmail.com [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Wan, Bo [National Laboratory of Solid State Microstructures, College of Physics, Nanjing University, Nanjing 210093 (China); Yin, Jiang [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Wan, X.G. [National Laboratory of Solid State Microstructures, College of Physics, Nanjing University, Nanjing 210093 (China)

2016-02-05

Using first-principles calculations, we have studied the effects of different edge passivation groups on the carrier mobility of the phosphorene nanoribbons (PNRs) and strain effect on the transport property in passivated PNRs. The numerical results show that the size-dependent carrier mobility of passivated PNRs is not very sensitive to the different passivation groups, such as hydrogen (H), fluorine (F) and chlorine (Cl), but strongly associated with the orientation of nanoribbons. Passivated armchair-PNR has much larger carrier mobility than passivated zigzag-PNR at the similar ribbon width. With increasing ribbon width, the electron mobility of passivated PNRs can be further enhanced. We also find that the anisotropy of carrier mobility in passivated PNRs can be reversed by applying tensile strain resulting from order switching of the conduction bands around Fermi level.

All-graphene edge contacts

DEFF Research Database (Denmark)

Jacobsen, Kåre Wedel; Falkenberg, Jesper Toft; Papior, Nick Rübner

2016-01-01

Using ab-initio methods we investigate the possibility of three-terminalgraphene "T-junction" devices and show that these all-graphene edge contactsare energetically feasible when the 1D interface itself is free from foreignatoms. We examine the energetics of various junction structures as a func......Using ab-initio methods we investigate the possibility of three-terminalgraphene "T-junction" devices and show that these all-graphene edge contactsare energetically feasible when the 1D interface itself is free from foreignatoms. We examine the energetics of various junction structures...... to be in therange of 1-10 kΩμm which is comparable to the best contact resistance reportedfor edge-contacted graphene-metal contacts. We conclude that conductingall-carbon T-junctions should be feasible....

Edge of polar cap patches

Science.gov (United States)

Hosokawa, K.; Taguchi, S.; Ogawa, Y.

2016-04-01

On the night of 4 December 2013, a sequence of polar cap patches was captured by an all-sky airglow imager (ASI) in Longyearbyen, Norway (78.1°N, 15.5°E). The 630.0 nm airglow images from the ASI of 4 second exposure time, oversampled the emission of natural lifetime (with quenching) of at least ˜30 sec, introduce no observational blurring effects. By using such high-quality ASI images, we succeeded in visualizing an asymmetry in the gradients between the leading/trailing edges of the patches in a 2-D fashion. The gradient in the leading edge was found to be 2-3 times steeper than that in the trailing edge. We also identified fingerlike structures, appearing only along the trailing edge of the patches, whose horizontal scale size ranged from 55 to 210 km. These fingers are considered to be manifestations of plasma structuring through the gradient-drift instability (GDI), which is known to occur only along the trailing edge of patches. That is, the current 2-D observations visualized, for the first time, how GDI stirs the patch plasma and such a mixing process makes the trailing edge more gradual. This result strongly implies a close connection between the GDI-driven plasma stirring and the asymmetry in the large-scale shape of patches and then suggests that the fingerlike structures can be used as markers to estimate the fine-scale structure in the plasma flow within patches.

Magnetotransport Properties of Graphene Nanoribbons with Zigzag Edges

Science.gov (United States)

Wu, Shuang; Liu, Bing; Shen, Cheng; Li, Si; Huang, Xiaochun; Lu, Xiaobo; Chen, Peng; Wang, Guole; Wang, Duoming; Liao, Mengzhou; Zhang, Jing; Zhang, Tingting; Wang, Shuopei; Yang, Wei; Yang, Rong; Shi, Dongxia; Watanabe, Kenji; Taniguchi, Takashi; Yao, Yugui; Wang, Weihua; Zhang, Guangyu

2018-05-01

The determination of the electronic structure by edge geometry is unique to graphene. In theory, an evanescent nonchiral edge state is predicted at the zigzag edges of graphene. Up to now, the approach used to study zigzag-edged graphene has mostly been limited to scanning tunneling microscopy. The transport properties have not been revealed. Recent advances in hydrogen plasma-assisted "top-down" fabrication of zigzag-edged graphene nanoribbons (Z-GNRs) have allowed us to investigate edge-related transport properties. In this Letter, we report the magnetotransport properties of Z-GNRs down to ˜70 nm wide on an h -BN substrate. In the quantum Hall effect regime, a prominent conductance peak is observed at Landau ν =0 , which is absent in GNRs with nonzigzag edges. The conductance peak persists under perpendicular magnetic fields and low temperatures. At a zero magnetic field, a nonlocal voltage signal, evidenced by edge conduction, is detected. These prominent transport features are closely related to the observable density of states at the hydrogen-etched zigzag edge of graphene probed by scanning tunneling spectroscopy, which qualitatively matches the theoretically predicted electronic structure for zigzag-edged graphene. Our study gives important insights for the design of new edge-related electronic devices.

Further results for crack-edge mappings by ray methods

International Nuclear Information System (INIS)

Norris, A.N.; Achenbach, J.D.; Ahlberg, L.; Tittman, B.R.

1984-01-01

This chapter discusses further extensions of the local edge mapping method to the pulse-echo case and to configurations of water-immersed specimens and transducers. Crack edges are mapped by the use of arrival times of edge-diffracted signals. Topics considered include local edge mapping in a homogeneous medium, local edge mapping algorithms, local edge mapping through an interface, and edge mapping through an interface using synthetic data. Local edge mapping is iterative, with two or three iterations required for convergence

Urbanization impacts on mammals across urban-forest edges and a predictive model of edge effects.

Science.gov (United States)

Villaseñor, Nélida R; Driscoll, Don A; Escobar, Martín A H; Gibbons, Philip; Lindenmayer, David B

2014-01-01

With accelerating rates of urbanization worldwide, a better understanding of ecological processes at the wildland-urban interface is critical to conserve biodiversity. We explored the effects of high and low-density housing developments on forest-dwelling mammals. Based on habitat characteristics, we expected a gradual decline in species abundance across forest-urban edges and an increased decline rate in higher contrast edges. We surveyed arboreal mammals in sites of high and low housing density along 600 m transects that spanned urban areas and areas turn on adjacent native forest. We also surveyed forest controls to test whether edge effects extended beyond our edge transects. We fitted models describing richness, total abundance and individual species abundance. Low-density housing developments provided suitable habitat for most arboreal mammals. In contrast, high-density housing developments had lower species richness, total abundance and individual species abundance, but supported the highest abundances of an urban adapter (Trichosurus vulpecula). We did not find the predicted gradual decline in species abundance. Of four species analysed, three exhibited no response to the proximity of urban boundaries, but spilled over into adjacent urban habitat to differing extents. One species (Petaurus australis) had an extended negative response to urban boundaries, suggesting that urban development has impacts beyond 300 m into adjacent forest. Our empirical work demonstrates that high-density housing developments have negative effects on both community and species level responses, except for one urban adapter. We developed a new predictive model of edge effects based on our results and the literature. To predict animal responses across edges, our framework integrates for first time: (1) habitat quality/preference, (2) species response with the proximity to the adjacent habitat, and (3) spillover extent/sensitivity to adjacent habitat boundaries. This framework will

Hybrid functional band gap calculation of SnO6 containing perovskites and their derived structures

International Nuclear Information System (INIS)

Lee, Hyewon; Cheong, S.W.; Kim, Bog G.

2015-01-01

We have studied the properties of SnO 6 octahedra-containing perovskites and their derived structures using ab initio calculations with different density functionals. In order to predict the correct band gap of the materials, we have used B3LYP hybrid density functional, and the results of B3LYP were compared with those obtained using the local density approximation and generalized gradient approximation data. The calculations have been conducted for the orthorhombic ground state of the SnO 6 containing perovskites. We also have expended the hybrid density functional calculation to the ASnO 3 /A'SnO 3 system with different cation orderings. We propose an empirical relationship between the tolerance factor and the band gap of SnO 6 containing oxide materials based on first principles calculation. - Graphical abstract: (a) Structure of ASnO 3 for orthorhombic ground state. The green ball is A (Ba, Sr, Ca) cation and the small (red) ball on edge is oxygen. SnO 6 octahedrons are plotted as polyhedron. (b) Band gap of ASnO 3 as a function of the tolerance factor for different density functionals. The experimental values of the band gap are marked as green pentagons. (c) ASnO 3 /A'SnO 3 superlattices with two types cation arrangement: [001] layered structure and [111] rocksalt structure, respectively. (d) B3LYP hybrid functional band gaps of ASnO 3 , [001] ordered superlattices, and [111] ordered superlattices of ASnO 3 /A'SnO 3 as a function of the effective tolerance factor. Note the empirical linear relationship between the band gap and effective tolerance factor. - Highlights: • We report the hybrid functional band gap calculation of ASnO 3 and ASnO 3 /A'SnO 3 . • The band gap of ASnO 3 using B3LYP functional reproduces the experimental value. • We propose the linear relationship between the tolerance factor and the band gap

A short course on topological insulators band structure and edge states in one and two dimensions

CERN Document Server

Asbóth, János K; Pályi, András

2016-01-01

This course-based primer provides newcomers to the field with a concise introduction to some of the core topics in the emerging field of topological insulators. The aim is to provide a basic understanding of edge states, bulk topological invariants, and of the bulk--boundary correspondence with as simple mathematical tools as possible. The present approach uses noninteracting lattice models of topological insulators, building gradually on these to arrive from the simplest one-dimensional case (the Su-Schrieffer-Heeger model for polyacetylene) to two-dimensional time-reversal invariant topological insulators (the Bernevig-Hughes-Zhang model for HgTe). In each case the discussion of simple toy models is followed by the formulation of the general arguments regarding topological insulators. The only prerequisite for the reader is a working knowledge in quantum mechanics, the relevant solid state physics background is provided as part of this self-contained text, which is complemented by end-of-chapter problems.

Edge-detect interpolation for direct digital periapical images

International Nuclear Information System (INIS)

Song, Nam Kyu; Koh, Kwang Joon

1998-01-01

The purpose of this study was to aid in the use of the digital images by edge-detect interpolation for direct digital periapical images using edge-deted interpolation. This study was performed by image processing of 20 digital periapical images; pixel replication, linear non-interpolation, linear interpolation, and edge-sensitive interpolation. The obtained results were as follows ; 1. Pixel replication showed blocking artifact and serious image distortion. 2. Linear interpolation showed smoothing effect on the edge. 3. Edge-sensitive interpolation overcame the smoothing effect on the edge and showed better image.

Superwind Outflow in Seyfert Galaxies? : Optical Observations of an Edge-On Sample

Science.gov (United States)

Colbert, E.; Gallimore, J.; Baum, S.; O'Dea, C.; Lehnert, M.

1994-12-01

Large-scale galactic winds (superwinds) are commonly found flowing out of the nuclear region of ultraluminous infrared and powerful starburst galaxies. Stellar winds and supernovae from the nuclear starburst are thought to provide the energy to drive these superwinds. The outflowing gas escapes along the rotation axis, sweeping up and shock-heating clouds in the halo, which produces optical line emission, X-rays and radio synchrotron emission. These features can most easily be studied in edge-on systems, so that the wind emission is not confused by that from the disk. Diffuse radio emission has been found (Baum et al. 1993, ApJ, 419, 553) to extend out to kpc-scales in a number of edge-on Seyfert galaxies. We have therefore launched a systematic search for superwind outflows in Seyferts. We present here narrow-band optical images and optical spectra for a sample of edge-on Seyferts. These data have been used to estimate the frequency of occurence of superwinds. Approximately half of the sample objects show evidence for extended emission-line regions which are preferentially oriented perpendicular to the galaxy disk. It is possible that these emission-line regions may be energized by a superwind outflow from a circumnuclear starburst, although there may also be a contribution from the AGN itself. A goal of this work is to find a diagnostic that can be used to distinguish between large-scale outflows that are driven by starbursts and those that are driven by an AGN. The presence of starburst-driven superwinds in Seyferts, if established, would have important implications for the connection between starburst galaxies and AGN.

L-band nighttime scintillations at the northern edge of the EIA along 95°E during the ascending half of the solar cycle 24

Science.gov (United States)

Dutta, Barsha; Kalita, Bitap Raj; Bhuyan, Pradip Kumar

2018-04-01

The characteristics of nighttime ionospheric scintillations measured at the L-band frequency of 1.575 GHz over Dibrugarh (27.5°N, 95°E, MLAT ∼ 17°N, 43° dip) during the ascending half of the solar cycle 24 from 2010 to 2014 have been investigated and the results are presented in this paper. The measurement location is within or outside the zone of influence of the equatorial ionization anomaly depending on solar and geomagnetic activity. Maximum scintillation is observed in the equinoxes irrespective of solar activity with clear asymmetry between March and September. The occurrence frequency in the solstices shifts from minimum in the June solstice in low solar activity to a minimum in the December solstice in high solar activity years. A significant positive correlation of occurrence of scintillations in the June solstice with solar activity has been observed. However, earlier reports from the Indian zone (∼75°E) indicate negative or no correlation of scintillation in June solstice with solar activity. Scintillations activity/occurrence in solstices indicates a clear positive correlation with Es recorded simultaneously by a collocated Ionosonde. In equinoxes, maximum scintillations occur in the pre-midnight hours while in solstices the occurrence frequency peaks just after sunset. The incidence of strong scintillations (S4 ≥ 0.4) increases with increase in solar activity. Strong (S4 ≥ 0.4) ionospheric scintillations accompanied by TEC depletions in the pre-midnight period is attributed to equatorial irregularities whereas the dusk period scintillations are related to the sporadic-E activity. Present results thus indicate that the current location at the northern edge of the EIA behaves as low as well as mid-latitude location.

IMAGE ANALYSIS BASED ON EDGE DETECTION TECHNIQUES

Institute of Scientific and Technical Information of China (English)

纳瑟; 刘重庆

2002-01-01

A method that incorporates edge detection technique, Markov Random field (MRF), watershed segmentation and merging techniques was presented for performing image segmentation and edge detection tasks. It first applies edge detection technique to obtain a Difference In Strength (DIS) map. An initial segmented result is obtained based on K-means clustering technique and the minimum distance. Then the region process is modeled by MRF to obtain an image that contains different intensity regions. The gradient values are calculated and then the watershed technique is used. DIS calculation is used for each pixel to define all the edges (weak or strong) in the image. The DIS map is obtained. This help as priority knowledge to know the possibility of the region segmentation by the next step (MRF), which gives an image that has all the edges and regions information. In MRF model,gray level l, at pixel location i, in an image X, depends on the gray levels of neighboring pixels. The segmentation results are improved by using watershed algorithm. After all pixels of the segmented regions are processed, a map of primitive region with edges is generated. The edge map is obtained using a merge process based on averaged intensity mean values. A common edge detectors that work on (MRF) segmented image are used and the results are compared. The segmentation and edge detection result is one closed boundary per actual region in the image.