WorldWideScience

Sample records for ballistic molecular transistors

  1. Ballistic Phosphorene Transistor

    Science.gov (United States)

    2015-11-19

    satisfactory. W911NF-14-1-0572 -II 66414-EL-II.3 TO:(1) Electronics Division (Qiu, Joe) TITLE: Final Report: Ballistic Phosphorene Transistor (x) Material... Transistor ” as a STIP award for the period 09/1/2014 through 5/31/2015. The ARO program director responsible for the grant is Dr. Joe Qiu. The PI is Prof...UU 19-11-2015 1-Sep-2014 31-May-2015 Approved for Public Release; Distribution Unlimited Final Report: Ballistic Phosphorene Transistor The views

  2. Shot noise in a harmonically driven ballistic graphene transistor

    Science.gov (United States)

    Korniyenko, Y.; Shevtsov, O.; Löfwander, T.

    2017-04-01

    We study time-dependent electron transport and quantum noise in a ballistic graphene field effect transistor driven by an ac gate potential. The nonlinear response to the ac signal is computed through Floquet theory for scattering states and Landauer-Büttiker theory for charge current and its fluctuations. Photon-assisted excitation of a quasibound state in the top-gate barrier leads to resonances in transmission that strongly influence the noise properties. For strong doping of graphene under source and drain contacts, when electrons are transmitted through the channel via evanescent waves, the resonance leads to a substantial suppression of noise. The Fano factor is then reduced well below the pseudodiffusive value, F tunneling (total suppression of back-reflection) persists for perpendicular incidence also when the barrier is driven harmonically. Although the transmission is inelastic and distributed among sideband energies, a sum rule leads to total suppression of shot noise.

  3. Temperature dependence of ballistic mobility in a metamorphic InGaAs/InAlAs high electron mobility transistor

    International Nuclear Information System (INIS)

    Lee, Jongkyong; Gang, Suhyun; Jo, Yongcheol; Kim, Jongmin; Woo, Hyeonseok; Han, Jaeseok; Kim, Hyungsang; Im, Hyunsik

    2014-01-01

    We have investigated the temperature dependence of ballistic mobility in a 100 nm-long InGaAs/InAlAs metamorphic high-electron-mobility transistor designed for millimeter-wavelength RF applications. To extract the temperature dependence of quasi-ballistic mobility, our experiment involves measurements of the effective mobility in the low-bias linear region of the transistor and of the collision-dominated Hall mobility using a gated Hall bar of the same epitaxial structure. The data measured from the experiment are consistent with that of modeled ballistic mobility based on ballistic transport theory. These results advance the understanding of ballistic transport in various transistors with a nano-scale channel length that is comparable to the carrier's mean free path in the channel.

  4. Analytical Model of Subthreshold Drain Current Characteristics of Ballistic Silicon Nanowire Transistors

    Directory of Open Access Journals (Sweden)

    Wanjie Xu

    2015-01-01

    Full Text Available A physically based subthreshold current model for silicon nanowire transistors working in the ballistic regime is developed. Based on the electric potential distribution obtained from a 2D Poisson equation and by performing some perturbation approximations for subband energy levels, an analytical model for the subthreshold drain current is obtained. The model is further used for predicting the subthreshold slopes and threshold voltages of the transistors. Our results agree well with TCAD simulation with different geometries and under different biasing conditions.

  5. A numerical study of the nanoribbon field-effect transistors under the ballistic and dissipative transport

    Science.gov (United States)

    Ghoreishi, Seyed Saleh; Yousefi, Reza; Saghafi, Kamyar; Aderang, Habib

    2017-08-01

    In this article, a detailed performance comparison is made between ballistic and dissipative quantum transport of metal oxide semicondutor-like graphene nanoribbon field-effect transistor, in ON and OFF-state conditions. By the self-consistent mode-space non-equilibrium Green's function approach, inter- and intraband scattering is accounted and the role of acoustic and optical phonon scattering on the performance of the devices is evaluated. We found that in this structure the dominant mechanism of scattering changes according to the ranges of voltage bias. Under large biasing conditions, the influence of optical phonon scattering becomes important. Also, the ambipolar and OFF-current are impressed by the phonon-assisted band-to-band tunneling and increased considerably compared to the ballistic conditions, although sub-threshold swing degrades due to optical phonon scattering.

  6. Current transport modeling and experimental study of THz room temperature ballistic deflection transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kaushal, Vikas; Margala, Martin [Department of Electrical and Computer Engineering, University of Massachusetts Lowell, MA, 01854 (United States); Yu Qiaoyan; Ampadu, Paul; Guarino, Gregg; Sobolewski, Roman, E-mail: vikas_kaushal@student.uml.ed [Department of Electrical and Computer Engineering, University of Rochester, NY, 14627 (United States)

    2009-11-15

    In this paper, two different theoretical models, Comsol Multiphysics{sup TM} (a Finite Element Analysis tool), and a field solver Atlas/Blaze from Silvaco, are compared qualitatively to study the effect of the deflector position, its size and electric field on the charge transport and its distribution along the channel, resulting in current outputs and leakages in ballistic deflection transistors (BDT). Silvaco simulations and experimental results were then used to study the lateral charge transport as a result of variation in electric field distribution, which controls the charge current along the channel in BDT. The electric field dependence of gain is also studied with experimental and theoretical results.

  7. Current transport modeling and experimental study of THz room temperature ballistic deflection transistors

    International Nuclear Information System (INIS)

    Kaushal, Vikas; Margala, Martin; Yu Qiaoyan; Ampadu, Paul; Guarino, Gregg; Sobolewski, Roman

    2009-01-01

    In this paper, two different theoretical models, Comsol Multiphysics TM (a Finite Element Analysis tool), and a field solver Atlas/Blaze from Silvaco, are compared qualitatively to study the effect of the deflector position, its size and electric field on the charge transport and its distribution along the channel, resulting in current outputs and leakages in ballistic deflection transistors (BDT). Silvaco simulations and experimental results were then used to study the lateral charge transport as a result of variation in electric field distribution, which controls the charge current along the channel in BDT. The electric field dependence of gain is also studied with experimental and theoretical results.

  8. Molecular thermal transistor: Dimension analysis and mechanism

    Science.gov (United States)

    Behnia, S.; Panahinia, R.

    2018-04-01

    Recently, large challenge has been spent to realize high efficient thermal transistors. Outstanding properties of DNA make it as an excellent nano material in future technologies. In this paper, we introduced a high efficient DNA based thermal transistor. The thermal transistor operates when the system shows an increase in the thermal flux despite of decreasing temperature gradient. This is what called as negative differential thermal resistance (NDTR). Based on multifractal analysis, we could distinguish regions with NDTR state from non-NDTR state. Moreover, Based on dimension spectrum of the system, it is detected that NDTR state is accompanied by ballistic transport regime. The generalized correlation sum (analogous to specific heat) shows that an irregular decrease in the specific heat induces an increase in the mean free path (mfp) of phonons. This leads to the occurrence of NDTR.

  9. Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport

    Science.gov (United States)

    Oproglidis, T. A.; Karatsori, T. A.; Barraud, S.; Ghibaudo, G.; Dimitriadis, C. A.

    2018-04-01

    In this work, we extend our analytical compact model for nanoscale junctionless triple-gate (JL TG) MOSFETs, capturing carrier transport from drift-diffusion to quasi-ballistic regime. This is based on a simple formulation of the low-field mobility extracted from experimental data using the Y-function method, taking into account the ballistic carrier motion and an increased carrier scattering in process-induced defects near the source/drain regions. The case of a Schottky junction in non-ideal ohmic contact at the drain side was also taken into account by modifying the threshold voltage and ideality factor of the JL transistor. The model is validated with experimental data for n-channel JL TG MOSFETs with channel length varying from 95 down to 25 nm. It can be easily implemented as a compact model for use in Spice circuit simulators.

  10. Ballistic behavior of ultra-high molecular weight polyethylene composite: effect of gamma radiation

    International Nuclear Information System (INIS)

    Alves, Andreia L. dos Santos; Nascimento, Lucio F.C.; Suarez, Joao C. Miguez; lucio2002bol.com.br

    2003-01-01

    Since World War II, textile composites have been used as ballistic armor. Ultra-high molecular weight polyethylene (UHMWPE) fibers are used in the production of armor materials. As they have been developed and commercialized only recently, there is not enough information about the effect of environmental agents in the ballistic performance of UHMWPE composites. In the present work, was evaluated the ballistic behavior of composite plates manufactured with UHMWPE fibers after exposure to gamma radiation. The ballistic tests results were related to the macromolecular alterations induced by the radiation through mechanical (hardness, impact and flexure) and physicochemical (Ftir/Mir. DSC and TGA) testing. It was observed that irradiation induces changes in the UHMWPE, degrading the ballistic performance of the composite. These results are presented and discussed. (author)

  11. Quantum ballistic transistor and low noise HEMT for cryo-electronics lower than 4.2 K

    International Nuclear Information System (INIS)

    Gremion, E.

    2008-01-01

    Next generations of cryo-detectors, widely used in physics of particles and physics of universe, will need in the future high-performance cryo-electronics less noisy and closer to the detector. Within this context, this work investigates properties of two dimensional electron gas GaAlAs/GaAs by studying two components, quantum point contact (QPC) and high electron mobility transistor (HEMT). Thanks to quantized conductance steps in QPC, we have realized a quantum ballistic transistor (voltage gain higher than 1), a new component useful for cryo-electronics thanks to its operating temperature and weak power consumption (about 1 nW). Moreover, the very low capacity of this component leads to promising performances for multiplexing low temperature bolometer dedicated to millimetric astronomy. The second study focused on HEMT with very high quality 2DEG. At 4.2 K, a voltage gain higher than 20 can be obtained with a very low power dissipation of less than 100 μW. Under the above experimental conditions, an equivalent input voltage noise of 1.2 nV/√(Hz) at 1 kHz and 0.12 nV/√(Hz) at 100 kHz has been reached. According to the Hooge formula, these noise performances are get by increasing gate capacity estimated to 60 pF. (author)

  12. Controlling charge current through a DNA based molecular transistor

    Energy Technology Data Exchange (ETDEWEB)

    Behnia, S., E-mail: s.behnia@sci.uut.ac.ir; Fathizadeh, S.; Ziaei, J.

    2017-01-05

    Molecular electronics is complementary to silicon-based electronics and may induce electronic functions which are difficult to obtain with conventional technology. We have considered a DNA based molecular transistor and study its transport properties. The appropriate DNA sequence as a central chain in molecular transistor and the functional interval for applied voltages is obtained. I–V characteristic diagram shows the rectifier behavior as well as the negative differential resistance phenomenon of DNA transistor. We have observed the nearly periodic behavior in the current flowing through DNA. It is reported that there is a critical gate voltage for each applied bias which above it, the electrical current is always positive. - Highlights: • Modeling a DNA based molecular transistor and studying its transport properties. • Choosing the appropriate DNA sequence using the quantum chaos tools. • Choosing the functional interval for voltages via the inverse participation ratio tool. • Detecting the rectifier and negative differential resistance behavior of DNA.

  13. Ballistic behaviour of ultra-high molecular weight polyethylene: effect of gamma radiation

    International Nuclear Information System (INIS)

    Alves, Andreia L.S.; Nascimento, Lucio F.C.; Miguez Suarez, Joao Carlos

    2004-01-01

    The fiber reinforced polymer matrix composites (PMCs) are considered excellent engineering materials. In structural applications, when a high strength-to-weight ratio is fundamental for the design, PMCs are successfully replacing many conventional materials. Since World War II textile materials have been used as ballistic armor. Materials manufactured with ultrahigh molecular weight polyethylene (UHMWPE) fibers are used in the production of armor materials, for personnel protection and armored vehicles. As these have been developed and commercialized more recently, there is not enough information about the action of the ionizing radiation in the ballistic performance of this armor material. In the present work the ballistic behavior of composite plates manufactured with ultrahigh molecular weight polyethylene (UHMWPE) fibers were evaluated after exposure to gamma radiation. The ballistic tests results were related to the macromolecular modifications induced by the environmental degradation through mechanical (hardness, impact and flexure) and physicochemical (infrared spectroscopy, differential scanning calorimetry and thermal gravimetric analysis) tests. Our results indicate that gamma irradiation induces modifications in the UHMWPE macromolecular chains, altering the mechanical properties of the composite and decreasing, for higher radiation doses, its ballistic performance. These results are presented and discussed. (author)

  14. Quantum ballistic transistor and low noise HEMT for cryo-electronics lower than 4.2 K; Transistor balistique quantique et HEMT bas-bruit pour la cryoelectronique inferieure a 4.2 K

    Energy Technology Data Exchange (ETDEWEB)

    Gremion, E

    2008-01-15

    Next generations of cryo-detectors, widely used in physics of particles and physics of universe, will need in the future high-performance cryo-electronics less noisy and closer to the detector. Within this context, this work investigates properties of two dimensional electron gas GaAlAs/GaAs by studying two components, quantum point contact (QPC) and high electron mobility transistor (HEMT). Thanks to quantized conductance steps in QPC, we have realized a quantum ballistic transistor (voltage gain higher than 1), a new component useful for cryo-electronics thanks to its operating temperature and weak power consumption (about 1 nW). Moreover, the very low capacity of this component leads to promising performances for multiplexing low temperature bolometer dedicated to millimetric astronomy. The second study focused on HEMT with very high quality 2DEG. At 4.2 K, a voltage gain higher than 20 can be obtained with a very low power dissipation of less than 100 {mu}W. Under the above experimental conditions, an equivalent input voltage noise of 1.2 nV/{radical}(Hz) at 1 kHz and 0.12 nV/{radical}(Hz) at 100 kHz has been reached. According to the Hooge formula, these noise performances are get by increasing gate capacity estimated to 60 pF. (author)

  15. Non-monotonic magnetoresistance in an AlGaN/GaN high-electron-mobility transistor structure in the ballistic region

    Science.gov (United States)

    Wang, Yi-Ting; Woo, Tak-Pong; Lo, S.-T.; Kim, Gil-Ho; Liang, Chi-Te

    2014-05-01

    In this report, we will discuss the nonmonotonic magnetoresistance (MR) in an AlGaN/GaN high-electron-mobility transistor (HEMT) in a perpendicular magnetic field B in the ballistic region ( kBTτ/ħ constant, temperature, elastic scattering time, reduced Planck constant, Fermi wave vector and mean free path, respectively. The MR shows a local maximum between the weak localization (WL) and the Shubnikov-de Haas regions. In the low magnetic field regime, the quantum correction to the conductivity is proportional to T -3/2, which is consistent with a recent theory [T. A. Sedrakyan, and M. E. Raikh, Phys. Rev. Lett. 100, 106806 (2008)]. According to our results, as the temperature is increased, the position of the MR maximum in B increases. These results cannot be explained by present theories. Moreover, in the high-magnetic-field regime, neither the magnetic and nor the temperature dependences of the observed MR is consistent with present theories. We, therefore, suggest that while some features of the observed nonmonotonic MR can be successfully explained, further experimental and theoretical studies are necessary to obtain a thorough understanding of the MR effects.

  16. Quantum ballistic analysis of transition metal dichalcogenides based double gate junctionless field effect transistor and its application in nano-biosensor

    Science.gov (United States)

    Shadman, Abir; Rahman, Ehsanur; Khosru, Quazi D. M.

    2017-11-01

    To reduce the thermal budget and the short channel effects in state of the art CMOS technology, Junctionless field effect transistor (JLFET) has been proposed in the literature. Numerous experimental, modeling, and simulation based works have been done on this new FET with bulk materials for various geometries until now. On the other hand, the two-dimensional layered material is considered as an alternative to current Si technology because of its ultra-thin body and high mobility. Very recently few simulation based works have been done on monolayer molybdenum disulfide based JLFET mainly to show the advantage of JLFET over conventional FET. However, no comprehensive simulation-based work has been done for double gate JLFET keeping in mind the prominent transition metal dichalcogenides (TMDC) to the authors' best knowledge. In this work, we have studied quantum ballistic drain current-gate voltage characteristics of such FETs within non-equilibrium Green's function (NEGF) framework. Our simulation results reveal that all these TMDC materials are viable options for implementing state of the art Junctionless MOSFET with emphasis on their performance at short gate lengths. Besides evaluating the prospect of TMDC materials in the digital logic application, the performance of Junctionless Double Gate trilayer TMDC heterostructure FET for the label-free electrical detection of biomolecules in dry environment has been investigated for the first time to the authors' best knowledge. The impact of charge neutral biomolecules on the electrical characteristics of the biosensor has been analyzed under dry environment situation. Our study shows that these materials could provide high sensitivity in the sub-threshold region as a channel material in nano-biosensor, a trend demonstrated by silicon on insulator FET sensor in the literature. Thus, going by the trend of replacing silicon with these novel materials in device level, TMDC heterostructure could be a viable alternative to

  17. The Development and Study of Molecular Electronic Switches and their Field-Effect Transistor (FET) Device Properties

    Science.gov (United States)

    2015-02-27

    used in molecular switches, electro- and photochromatic materials, field-effect transistors (FETs), OLEDs, and photovoltaic and solar cells . We are...materials that have interesting properties as photovoltaic or materials suitable in field-effect transistor (FET). (a) Papers published in peer-reviewed...effect transistors (FETs), electrochromic materials and solar cells . The goal of this research project is to synthesize fluorene- and perylene-based

  18. Field-effect transistors based on self-organized molecular nanostripes

    DEFF Research Database (Denmark)

    Cavallini, M.; Stoliare, P.; Moulin, J.-F.

    2005-01-01

    Charge transport properties in organic semiconductors depend strongly on molecular order. Here we demonstrate field-effect transistors where drain current flows through a precisely defined array of nanostripes made of crystalline and highly ordered molecules. The molecular stripes are fabricated ...... by the menisci once the critical concentration is reached and self-organizes into molecularly ordered stripes 100-200 nm wide and a few monolayers high. The charge mobility measured along the stripes is 2 orders of magnitude larger than the values measured for spin-coated thin films....

  19. Dissipative tunneling and orthogonality catastrophe in molecular transistors

    DEFF Research Database (Denmark)

    Braig, S.; Flensberg, Karsten

    2004-01-01

    Transport through molecular devices with weak tunnel coupling to the leads but with strong coupling to a single vibrational mode is considered in the case where the vibration is damped by coupling to the environment. In particular, we investigate what influence the electrostatic coupling of the c...

  20. Josephson current through a molecular transistor in a dissipative environment

    DEFF Research Database (Denmark)

    Novotny, T; Rossini, Gianpaolo; Flensberg, Karsten

    2005-01-01

    We study the Josephson coupling between two superconductors through a single correlated molecular level, including Coulomb interaction on the level and coupling to a bosonic environment. All calculations are done to the lowest, i.e., the fourth, order in the tunneling coupling and we find a suppr...

  1. Controlling field-effect mobility in pentacene-based transistors by supersonic molecular-beam deposition

    International Nuclear Information System (INIS)

    Toccoli, T.; Pallaoro, A.; Coppede, N.; Iannotta, S.; De Angelis, F.; Mariucci, L.; Fortunato, G.

    2006-01-01

    We show that pentacene field-effect transistors, fabricated by supersonic molecular beams, have a performance strongly depending on the precursor's kinetic energy (K E ). The major role played by K E is in achieving highly ordered and flat films. In the range K E ≅3.5-6.5 eV, the organic field effect transistor linear mobility increases of a factor ∼5. The highest value (1.0 cm 2 V -1 s -1 ) corresponds to very uniform and flat films (layer-by-layer type growth). The temperature dependence of mobility for films grown at K E >6 eV recalls that of single crystals (bandlike) and shows an opposite trend for films grown at K E ≤5.5 eV

  2. Molecular design and ordering effects in π-functional materials for transistor and solar cell applications

    KAUST Repository

    Beaujuge, Pierre

    2011-12-21

    Organic electronics are broadly anticipated to impact the development of flexible thin-film device technologies. Among these, solution-processable π-conjugated polymers and small molecules are proving particularly promising in field-effect transistors and bulk heterojunction solar cells. This Perspective analyzes some of the most exciting strategies recently suggested in the design and structural organization of π-functional materials for transistor and solar cell applications. Emphasis is placed on the interplay between molecular structure, self-assembling properties, nanoscale and mesoscale ordering, and device efficiency parameters. A critical look at the various approaches used to optimize both materials and device performance is provided to assist in the identification of new directions and further advances. © 2011 American Chemical Society.

  3. Terminal Ballistics

    CERN Document Server

    Rosenberg, Zvi

    2012-01-01

    This book covers the important issues of terminal ballistics in a comprehensive way combining experimental data, numerical simulations and analytical modeling. The first chapter reviews the experimental equipment which are used for ballistic tests and the diagnostics for material characterization under impulsive loading conditions. The second chapter covers essential features of the codes which are used for terminal ballistics such as the Euler vs. Lagrange schemes and meshing techniques, as well as the most popular material models. The third chapter, devoted to the penetration mechanics of rigid penetrators, brings the update of modeling in this field. The fourth chapter deals with plate perforation and the fifth chapter deals with the penetration mechanics of shaped charge jets and eroding long rods. The last two chapters discuss several techniques for the disruption and defeating of the main threats in armor design. Throughout the book the authors demonstrate the advantages of numerical simulations in unde...

  4. Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Soerensen, B. S.; Aagesen, M.; Soerensen, C. B.; Lindelof, P. E.; Martinez, K. L.; Nygaard, J.

    2008-01-01

    We present the electric properties of p-InAs nanowire field-effect transistors showing ambipolar conduction. Be doped nanowires are grown by the vapor-solid-solid mechanism using molecular beam epitaxy with in situ deposited Au catalyst particles. P-type conduction in InAs nanowires is challenging because of the Fermi-level pinning above the conduction band edge at the nanowire surface that leads to creation of an electron inversion layer. We demonstrate that this task is possible without a modified surface and report a strong temperature dependence (10-10 5 ) of the on-off ratio caused by the surface inversion layer

  5. Speed up Ferroelectric Organic Transistor Memories by Using Two-Dimensional Molecular Crystalline Semiconductors.

    Science.gov (United States)

    Song, Lei; Wang, Yu; Gao, Qian; Guo, Yu; Wang, Qijing; Qian, Jun; Jiang, Sai; Wu, Bing; Wang, Xinran; Shi, Yi; Zheng, Youdou; Li, Yun

    2017-05-31

    Ferroelectric organic field-effect transistors (Fe-OFETs) have attracted intensive attention because of their promising potential in nonvolatile memory devices. The quick switching between binary states is a significant fundamental feature in evaluating Fe-OFET memories. Here, we employ 2D molecular crystals via a solution-based process as the conducting channels in transistor devices, in which ferroelectric polymer acts as the gate dielectric. A high carrier mobility of up to 5.6 cm 2 V -1 s -1 and a high on/off ratio of 10 6 are obtained. In addition, the efficient charge injection by virtue of the ultrathin 2D molecular crystals is beneficial in achieving rapid operations in the Fe-OFETs; devices exhibit short switching time of ∼2.9 and ∼3.0 ms from the on- to the off-state and from the off- to the on-state, respectively. Consequently, the presented strategy is capable of speeding up Fe-OFET memory devices by using solution-processed 2D molecular crystals.

  6. Research Update: Molecular electronics: The single-molecule switch and transistor

    Directory of Open Access Journals (Sweden)

    Kai Sotthewes

    2014-01-01

    Full Text Available In order to design and realize single-molecule devices it is essential to have a good understanding of the properties of an individual molecule. For electronic applications, the most important property of a molecule is its conductance. Here we show how a single octanethiol molecule can be connected to macroscopic leads and how the transport properties of the molecule can be measured. Based on this knowledge we have realized two single-molecule devices: a molecular switch and a molecular transistor. The switch can be opened and closed at will by carefully adjusting the separation between the electrical contacts and the voltage drop across the contacts. This single-molecular switch operates in a broad temperature range from cryogenic temperatures all the way up to room temperature. Via mechanical gating, i.e., compressing or stretching of the octanethiol molecule, by varying the contact's interspace, we are able to systematically adjust the conductance of the electrode-octanethiol-electrode junction. This two-terminal single-molecule transistor is very robust, but the amplification factor is rather limited.

  7. Molecular Dynamics Modeling of the Effect of Axial and Transverse Compression on the Residual Tensile Properties of Ballistic Fiber

    Directory of Open Access Journals (Sweden)

    Sanjib C. Chowdhury

    2017-02-01

    Full Text Available Ballistic impact induces multiaxial loading on Kevlar® and polyethylene fibers used in protective armor systems. The influence of multiaxial loading on fiber failure is not well understood. Experiments show reduction in the tensile strength of these fibers after axial and transverse compression. In this paper, we use molecular dynamics (MD simulations to explain and develop a fundamental understanding of this experimental observation since the property reduction mechanism evolves from the atomistic level. An all-atom MD method is used where bonded and non-bonded atomic interactions are described through a state-of-the-art reactive force field. Monotonic tension simulations in three principal directions of the models are conducted to determine the anisotropic elastic and strength properties. Then the models are subjected to multi-axial loads—axial compression, followed by axial tension and transverse compression, followed by axial tension. MD simulation results indicate that pre-compression distorts the crystal structure, inducing preloading of the covalent bonds and resulting in lower tensile properties.

  8. Molecular Design of Semiconducting Polymers for High-Performance Organic Electrochemical Transistors

    KAUST Repository

    Nielsen, Christian B.

    2016-07-22

    The organic electrochemical transistor (OECT), capable of transducing small ionic fluxes into electronic signals in an aqueous envi-ronment, is an ideal device to utilize in bioelectronic applications. Currently, most OECTs are fabricated with commercially availa-ble conducting poly(3,4-ethylenedioxythiophene) (PEDOT)-based suspensions and are therefore operated in depletion mode. Here, we present a series of semiconducting polymers designed to elucidate important structure-property guidelines required for accumulation mode OECT operation. We discuss key aspects relating to OECT performance such as ion and hole transport, elec-trochromic properties, operational voltage and stability. The demonstration of our molecular design strategy is the fabrication of accumulation mode OECTs that clearly outperform state-of-the-art PEDOT based devices, and show stability under aqueous oper-ation without the need for formulation additives and cross-linkers.

  9. Engineering DNA Molecule Bridge between Metal Electrodes for High-Performance Molecular Transistor: An Environmental Dependent Approach.

    Science.gov (United States)

    Fathizadeh, S; Behnia, S; Ziaei, J

    2018-03-08

    Molecule-based transistors have attracted much attention due to their exclusive properties. Creation of a molecular transistor as well as engineering its structure have become one of the greatest aims of scientists. We have focused on the environmental dependent behavior of a DNA-templated transistor. Using the statistical distribution of the energy levels, we were able to distinguish the delocalized states of charge carriers and the transition between the localized and delocalized behaviors. On the other hand, we can determine the stability conditions of our quantum dynamical system. The results are verified by the inverse participation ratio method. Therefore, the most appropriate parameters for designing the DNA transistor are chosen. The DNA sequence is an important factor for its transport properties, but the results have shown that in the presence of the bath, the bath parameters are important, too. As is shown, it is possible that via the adjustment of bath parameters, one can design a conductivity channel for all nucleotide contents. Thus, one can engineer a DNA based transistor simply through the setting of only one parameter.

  10. Surface-directed molecular assembly of pentacene on monolayer graphene for high-performance organic transistors.

    Science.gov (United States)

    Lee, Wi Hyoung; Park, Jaesung; Sim, Sung Hyun; Lim, Soojin; Kim, Kwang S; Hong, Byung Hee; Cho, Kilwon

    2011-03-30

    Organic electronic devices that use graphene electrodes have received considerable attention because graphene is regarded as an ideal candidate electrode material. Transfer and lithographic processes during fabrication of patterned graphene electrodes typically leave polymer residues on the graphene surfaces. However, the impact of these residues on the organic semiconductor growth mechanism on graphene surface has not been reported yet. Here, we demonstrate that polymer residues remaining on graphene surfaces induce a stand-up orientation of pentacene, thereby controlling pentacene growth such that the molecular assembly is optimal for charge transport. Thus, pentacene field-effect transistors (FETs) using source/drain monolayer graphene electrodes with polymer residues show a high field-effect mobility of 1.2 cm(2)/V s. In contrast, epitaxial growth of pentacene having molecular assembly of lying-down structure is facilitated by π-π interaction between pentacene and the clean graphene electrode without polymer residues, which adversely affects lateral charge transport at the interface between electrode and channel. Our studies provide that the obtained high field-effect mobility in pentacene FETs using monolayer graphene electrodes arises from the extrinsic effects of polymer residues as well as the intrinsic characteristics of the highly conductive, ultrathin two-dimensional monolayer graphene electrodes.

  11. Terminal ballistics

    CERN Document Server

    Rosenberg, Zvi

    2016-01-01

    This book comprehensively discusses essential aspects of terminal ballistics, combining experimental data, numerical simulations and analytical modeling. Employing a unique approach to numerical simulations as a measure of sensitivity for the major physical parameters, the new edition also includes the following features: new figures to better illustrate the problems discussed; improved explanations for the equation of state of a solid and for the cavity expansion process; new data concerning the Kolsky bar test; and a discussion of analytical modeling for the hole diameter in a thin metallic plate impacted by a shaped charge jet. The section on thick concrete targets penetrated by rigid projectiles has now been expanded to include the latest findings, and two new sections have been added: one on a novel approach to the perforation of thin concrete slabs, and one on testing the failure of thin metallic plates using a hydrodynamic ram.

  12. Molecular recognition by synthetic receptors: Application in field-effect transistor based chemosensing.

    Science.gov (United States)

    Iskierko, Zofia; Noworyta, Krzysztof; Sharma, Piyush Sindhu

    2018-03-06

    Molecular recognition, i.e., ability of one molecule to recognize another through weak bonding interactions, is one of the bases of life. It is often implemented to sensing systems of high merits. Preferential recognition of the analyte (guest) by the receptor (host) induces changes in physicochemical properties of the sensing system. These changes are measured by using suitable signal transducers. Because of possibility of miniaturization, fast response, and high sensitivity, field-effect transistors (FETs) are more frequently being used for that purpose. A FET combined with a biological material offers the potential to overcome many challenges approached in sensing. However, low stability of biological materials under measurement conditions is a serious problem. To circumvent this problem, synthetic receptors were integrated with the gate surface of FETs to provide robust performance. In the present critical review, the approach utilized to devise chemosensors integrating synthetic receptors and FET transduction is discussed in detail. The progress in this field was summarized and important outcome was provided. Copyright © 2018 Elsevier B.V. All rights reserved.

  13. Atomically-thin molecular layers for electrode modification of organic transistors

    Science.gov (United States)

    Gim, Yuseong; Kang, Boseok; Kim, Bongsoo; Kim, Sun-Guk; Lee, Joong-Hee; Cho, Kilwon; Ku, Bon-Cheol; Cho, Jeong Ho

    2015-08-01

    Atomically-thin molecular layers of aryl-functionalized graphene oxides (GOs) were used to modify the surface characteristics of source-drain electrodes to improve the performances of organic field-effect transistor (OFET) devices. The GOs were functionalized with various aryl diazonium salts, including 4-nitroaniline, 4-fluoroaniline, or 4-methoxyaniline, to produce several types of GOs with different surface functional groups (NO2-Ph-GO, F-Ph-GO, or CH3O-Ph-GO, respectively). The deposition of aryl-functionalized GOs or their reduced derivatives onto metal electrode surfaces dramatically enhanced the electrical performances of both p-type and n-type OFETs relative to the performances of OFETs prepared without the GO modification layer. Among the functionalized rGOs, CH3O-Ph-rGO yielded the highest hole mobility of 0.55 cm2 V-1 s-1 and electron mobility of 0.17 cm2 V-1 s-1 in p-type and n-type FETs, respectively. Two governing factors: (1) the work function of the modified electrodes and (2) the crystalline microstructures of the benchmark semiconductors grown on the modified electrode surface were systematically investigated to reveal the origin of the performance improvements. Our simple, inexpensive, and scalable electrode modification technique provides a significant step toward optimizing the device performance by engineering the semiconductor-electrode interfaces in OFETs.Atomically-thin molecular layers of aryl-functionalized graphene oxides (GOs) were used to modify the surface characteristics of source-drain electrodes to improve the performances of organic field-effect transistor (OFET) devices. The GOs were functionalized with various aryl diazonium salts, including 4-nitroaniline, 4-fluoroaniline, or 4-methoxyaniline, to produce several types of GOs with different surface functional groups (NO2-Ph-GO, F-Ph-GO, or CH3O-Ph-GO, respectively). The deposition of aryl-functionalized GOs or their reduced derivatives onto metal electrode surfaces dramatically

  14. Comportamento balístico de compósito de polietileno de altíssimo peso molecular: efeito da radiação gama Ballistic behaviour of ultra-high molecular weight polyethylene: effect of gamma radiation

    Directory of Open Access Journals (Sweden)

    Andreia L. S. Alves

    2004-06-01

    Full Text Available Os materiais compósitos de matriz polimérica (PMCs reforçados por fibras são considerados excelentes materiais de engenharia. Em aplicações estruturais, quando uma elevada relação resistência peso é fundamental para o projeto, os PMCs vêm substituindo com sucesso diversos materiais convencionais. Materiais têxteis são utilizados, desde a 2ª Guerra Mundial, como blindagens balísticas. Materiais fabricados com fibra do polietileno de altíssimo peso molecular (UHMWPE são empregados na produção de blindagens, para proteção pessoal e em carros de combate. Todavia, em virtude de terem sido desenvolvidos e comercializados mais recentemente, não existem informações suficientes sobre o desempenho balístico desses materiais após a sua exposição aos agentes ambientais. No presente trabalho foi estudado o comportamento balístico de placas compósitas fabricadas com fibra de polietileno de altíssimo peso molecular (UHMWPE, após sua exposição à radiação gama. Os resultados dos testes balísticos foram relacionados com as alterações macromoleculares induzidas pela irradiação por meio de ensaios mecânicos (dureza, impacto e flexão e físico-químicos (espectroscopia no infravermelho, calorimetria diferencial de varredura e análise termogravimétrica. Foi verificado que a irradiação gama provoca modificações nas cadeias macromoleculares do polímero, que alteram as propriedades mecânicas do compósito de UHMWPE, reduzindo, nas doses de radiação mais elevadas, o seu desempenho balístico. Estes resultados são apresentados e discutidos.The fiber reinforced polymer matrix composites (PMCs are considered excellent engineering materials. In structural applications, when a high strength-to-weight ratio is fundamental for the design, PMCs are successfully replacing many conventional materials. Since World War II textile materials have been used as ballistic armor. Materials manufactured with ultrahigh molecular weight

  15. Extended-gate field-effect transistor (EG-FET) with molecularly imprinted polymer (MIP) film for selective inosine determination.

    Science.gov (United States)

    Iskierko, Zofia; Sosnowska, Marta; Sharma, Piyush Sindhu; Benincori, Tiziana; D'Souza, Francis; Kaminska, Izabela; Fronc, Krzysztof; Noworyta, Krzysztof

    2015-12-15

    A novel recognition unit of chemical sensor for selective determination of the inosine, renal disfunction biomarker, was devised and prepared. For that purpose, inosine-templated molecularly imprinted polymer (MIP) film was deposited on an extended-gate field-effect transistor (EG-FET) signal transducing unit. The MIP film was prepared by electrochemical polymerization of bis(bithiophene) derivatives bearing cytosine and boronic acid substituents, in the presence of the inosine template and a thiophene cross-linker. After MIP film deposition, the template was removed, and was confirmed by UV-visible spectroscopy. Subsequently, the film composition was characterized by spectroscopic techniques, and its morphology and thickness were determined by AFM. The finally MIP film-coated extended-gate field-effect transistor (EG-FET) was used for signal transduction. This combination is not widely studied in the literature, despite the fact that it allows for facile integration of electrodeposited MIP film with FET transducer. The linear dynamic concentration range of the chemosensor was 0.5-50 μM with inosine detectability of 0.62 μM. The obtained detectability compares well to the levels of the inosine in body fluids which are in the range 0-2.9 µM for patients with diagnosed diabetic nephropathy, gout or hyperuricemia, and can reach 25 µM in certain cases. The imprinting factor for inosine, determined from piezomicrogravimetric experiments with use of the MIP film-coated quartz crystal resonator, was found to be 5.5. Higher selectivity for inosine with respect to common interferents was also achieved with the present molecularly engineered sensing element. The obtained analytical parameters of the devised chemosensor allow for its use for practical sample measurements. Copyright © 2015 Elsevier B.V. All rights reserved.

  16. Molecular Design of Novel Poly(urethane-urea) Hybrids as Helmet Pads for Ballistic and Blast Trauma Mitigation

    Science.gov (United States)

    2009-03-01

    including as potential protection against projectile impacts and blast loading impacts. In general, both PU and PUU consist of long-chain polyols ...the hard segments of PU and PUU, respectively. During the polymerization of PUU, the urethane linkage is formed from the diisocyanate- polyol reaction...between the soft and hard segments gives rise to a wide range of useful physical and mechanical properties (2). The type and molecular weight of polyols

  17. Modeling of Quasi-ballistic transport in multi-gate MOSFET for circuit simulations

    International Nuclear Information System (INIS)

    Martinie, Sebastien

    2009-01-01

    Today, the MOSFET transistor reaches deca-nanometer dimensions for which the effects of ballistic transport can no longer be neglected. The challenge is therefore to be able to introduce (quasi-)ballistic transport in the modeling of new devices and evaluates its impact at the circuit level. In this context, our work focuses on the introduction of (quasi-)ballistic transport in compact model of multi-gate transistor for the simulation of circuit elements. Firstly, the McKelvey's method applied to MOSFET has been used to synthesize existing works on analytical modeling of ballistic / quasi-ballistic transport. Then, we built a macroscopic model called 'quasi-ballistic mobility' (starting from pioneering work of Rhew et al), following the comparison between the moment method and the McKelvey method to describe (quasi-)ballistic transport in TCAD environment. Secondly, results from this first model have led us to build our (quasi-)ballistic current by adapting or creating new approaches to take into account various effects of nano-scale devices: short-channel effects, quantum confinement and scattering mechanisms. Finally, our work investigates the impact of the transport properties on the performances of circuit operation. (author)

  18. Chemical oxidative and solid state synthesis of low molecular weight polymers for organic field effect transistors

    Science.gov (United States)

    Mahale, Rajashree Y.; Dharmapurikar, Satej S.; Chini, Mrinmoy Kumar

    2018-03-01

    Solution processability of the precursor molecules is a major issue owing to their limited solubility for the synthesis of conjugated polymers. Therefore, we favour the solvent free solid state chemical oxidative polymerization route for the synthesis of diketopyrrolopyrrole (DPP) based donor-acceptor (D-A) type conjugated polymers. D-A type polymer Poly(S-OD-EDOT) which contains DPP coupled with EDOT donor units is synthesized via solid state polymerization method. The polymer is employed as an active layer for organic field-effect transistors to measure charge transport properties. The Polymer shows good hole mobility 3.1 × 10-2 cm2 V-1 s-1, with a on/off ratio of 1.1 × 103.

  19. Ballistic Test Facility

    Data.gov (United States)

    Federal Laboratory Consortium — The Ballistic Test Facility is comprised of two outdoor and one indoor test ranges, which are all instrumented for data acquisition and analysis. Full-size aircraft...

  20. 7-Octenyltrichrolosilane/trimethyaluminum hybrid dielectrics fabricated by molecular-atomic layer deposition on ZnO thin film transistors

    Science.gov (United States)

    Huang, Jie; Lee, Mingun; Lucero, Antonio T.; Cheng, Lanxia; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    We demonstrate the fabrication of 7-octenytrichlorosilane (7-OTS)/trimethylaluminum (TMA) organic-inorganic hybrid films using molecular-atomic layer deposition (MALD). The properties of 7-OTS/TMA hybrid films are extensively investigated using transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), and electrical measurements. Our results suggest that uniform and smooth amorphous hybrid thin films with excellent insulating properties are obtained using the MALD process. Films have a relatively high dielectric constant of approximately 5.0 and low leakage current density. We fabricate zinc oxide (ZnO) based thin film transistors (TFTs) using 7-OTS/TMA hybrid material as a back gate dielectric with the top ZnO channel layer deposited in-situ via MALD. The ZnO TFTs exhibit a field effect mobility of approximately 0.43 cm2 V-1 s-1, a threshold voltage of approximately 1 V, and an on/off ratio of approximately 103 under low voltage operation (from -3 to 9 V). This work demonstrates an organic-inorganic hybrid gate dielectric material potentially useful in flexible electronics application.

  1. Solvent vapor annealing in the molecular regime drastically improves carrier transport in small-molecule thin-film transistors

    KAUST Repository

    Khan, Hadayat Ullah

    2013-04-10

    We demonstrate a new way to investigate and control the solvent vapor annealing of solution-cast organic semiconductor thin films. Solvent vapor annealing of spin-cast films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn) is investigated in situ using quartz crystal microbalance with dissipation (QCM-D) capability, allowing us to monitor both solvent mass uptake and changes in the mechanical rigidity of the film. Using time-resolved grazing incidence wide angle X-ray scattering (GIWAXS) and complementary static atomic force microscopy (AFM), we demonstrate that solvent vapor annealing in the molecular regime can cause significant performance improvements in organic thin film transistors (OTFTs), whereas allowing the solvent to percolate and form a liquid phase results in catastrophic reorganization and dewetting of the film, making the process counterproductive. Using these lessons we devise processing conditions which prevent percolation of the adsorbed solvent vapor molecules for extended periods, thus extending the benefits of solvent vapor annealing and improving carrier mobility by nearly two orders of magnitude. Ultimately, it is demonstrated that QCM-D is a very powerful sensor of the state of the adsorbed solvent as well as the thin film, thus making it suitable for process development as well as in-line process monitoring both in laboratory and in future manufacturing settings. © 2013 American Chemical Society.

  2. Unijunction transistors

    International Nuclear Information System (INIS)

    1981-01-01

    The electrical characteristics of unijunction transistors can be modified by irradiation with electron beams in excess of 400 KeV and at a dose rate of 10 13 to 10 16 e/cm 2 . Examples are given of the effect of exposing the emitter-base junctions of transistors to such lattice defect causing radiation for a time sufficient to change the valley current of the transistor. (U.K.)

  3. Gun Internal Ballistics.

    Science.gov (United States)

    An approximate method of analysis is formulated for gun internal ballistics. The method is incorporated in a digital computer program which is...described. The validity of the method of analysis and computational procedure is substantiated by comparison of theoretical results with experimental

  4. Ballistic hole magnetic microscopy

    NARCIS (Netherlands)

    Haq, E.; Banerjee, T.; Siekman, M.H.; Lodder, J.C.; Jansen, R.

    2005-01-01

    A technique to study nanoscale spin transport of holes is presented: ballistic hole magnetic microscopy. The tip of a scanning tunneling microscope is used to inject hot electrons into a ferromagnetic heterostructure, where inelastic decay creates a distribution of electron-hole pairs.

  5. Superconducting transistor

    International Nuclear Information System (INIS)

    Gray, K.E.

    1978-01-01

    A three film superconducting tunneling device, analogous to a semiconductor transistor, is presented, including a theoretical description and experimental results showing a current gain of four. Much larger current gains are shown to be feasible. Such a development is particularly interesting because of its novelty and the striking analogies with the semiconductor junction transistor

  6. Polymer-dielectric molecular interactions in defect-free poly(3-hexylthiophene): dependence and consequences of regioregularity on transistor charge transport properties

    Science.gov (United States)

    Nawaz, Ali; Cruz-Cruz, Isidro; Rego, Jessica S.; Koehler, Marlus; Gopinathan, Sreelekha P.; Kumar, Anil; Hümmelgen, Ivo A.

    2017-08-01

    We investigate the molecular interaction of poly(3-hexylthiophene-2,5-diyl) (P3HT) molecules with polar functional groups of the dielectric surface, and its dependence on the regioregularity of P3HT. With this aim, we consider thickness-dependent molecular order of 100% regioregular defect-free P3HT (DF-P3HT) and 93% regioregular P3HT (LT-P3HT), deposited on top of cross-linked poly(vinyl alcohol) (cr-PVA) substrates. Intimate contact of P3HT molecules and cr-PVA surface defects affects the molecular order of P3HT differently, depending on the regioregularity. Consequently, these molecular order changes on the charge transport properties of organic field-effect transistors (OFETs) are investigated using four thicknesses (20, 40, 80 and 120 nm) of P3HT. As compared to other thicknesses, μ sat for 20 nm DF-P3HT OFETs shows further improvement, while the opposite occurs for 20 nm LT-P3HT OFETs. Depending on the regioregularity (and thus the chain orientation), P3HT molecules exhibit a difference in dipole moments. Consequently, the interaction of edge-on or face-on P3HT molecules with cr-PVA surface dipoles has different contributions towards the electrostatic energetic disorder at cr-PVA/P3HT interface. This subtle difference of behavior helps one to understand the huge spread of characteristics of P3HT based transistors found in literature.

  7. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs

    Directory of Open Access Journals (Sweden)

    Hong Yu

    2009-04-01

    Full Text Available In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used for subband structure calculation, coupled to a two-dimensional Poisson solver for electrostatics. A semi-classical ballistic FET model is then used to evaluate the ballistic current-voltage characteristics of SiNW FETs with and without strain. Our results presented here indicate that [110] is the optimum orientation for the p-type SiNW FETs and sensors. For the ultra-scaled 2.2 nm square SiNW, due to the limit of strong quantum confinement, the effect of the uniaxial stress on the magnitude of ballistic drive current is too small to be considered, except for the [100] orientation. However, for larger 5 nm square SiNW transistors with various transport orientations, the uniaxial tensile stress obviously alters the ballistic performance, while the uniaxial compressive stress slightly changes the ballistic hole current. Furthermore, the competition of injection velocity and carrier density related to the effective hole masses is found to play a critical role in determining the performance of the nanotransistors.

  8. Firearms and Ballistics

    OpenAIRE

    BOLTON-KING, Rachel; Schulze, Johan

    2016-01-01

    Chapter 7 of the book entitled 'Practical Veterinary Forensics' aims to introduce forensic veterinarians to the scientific concepts underpinning the field of firearms and ballistics. This introduction will enable practitioners to understand wound formation depending on the firearm and ammunition used. \\ud \\ud Various types of firearms, modern firing mechanisms and ammunition will be explained, together with an introduction to the physical concepts underpinning the four main constituents of th...

  9. Bipolar redox behaviour, field-effect mobility and transistor switching of the low-molecular azo glass AZOPD.

    Science.gov (United States)

    Arlt, Michael; Scheffler, Ayna; Suske, Irina; Eschner, Michael; Saragi, Tobat P I; Salbeck, Josef; Fuhrmann-Lieker, Thomas

    2010-11-07

    We present electrochemical and spectroelectrochemical data for the bipolar azo compound N,N'-diphenyl-N,N'-bis[4-(phenylazo)phenyl]-4,4'diaminobiphenyl (AZOPD) demonstrating reversible bipolar redox behaviour with a bandgap of 2.1 eV. The reduced species formed upon two-electron transfer can be described as bis(radical anion) as was confirmed by comparison with a reference compound with only one azo chromophore. Hole and electron transport behaviour in amorphous films was demonstrated by the fabrication of organic field-effect transistors using gold and magnesium contacts, respectively. The transistors are sensitive to light due to E-Z photoisomerization.

  10. Supra-ballistic phonons

    International Nuclear Information System (INIS)

    Russell, F.M.

    1989-05-01

    Energetic particles moving with a solid, either from nuclear reactions or externally injected, deposit energy by inelastic scattering processes which eventually appears as thermal energy. If the transfer of energy occurs in a crystalline solid then it is possible to couple some of the energy directly to the nuclei forming the lattice by generating phonons. In this paper the transfer of energy from a compound excited nucleus to the lattice is examined by introducing a virtual particle Π. It is shown that by including a Π in the nuclear reaction a substantial amount of energy can be coupled directly to the lattice. In the lattice this particle behaves as a spatially localized phonon of high energy, the so-called supra-ballistic phonon. By multiple inelastic scattering the supra-ballistic phonon eventually thermalizes. Because both the virtual particle Π and the equivalent supra-ballistic phonon have no charge or spin and can only exist within a lattice it is difficult to detect other than by its decay into thermal phonons. The possibility of a Π removing excess energy from a compound nucleus formed by the cold fusion of deuterium is examined. (Author)

  11. Ballistic negatron battery

    Energy Technology Data Exchange (ETDEWEB)

    Prasad, M.S.R. [Koneru Lakshmiah Univ.. Dept. of Electrical and Electronics Engineering, Green fields, Vaddeswaram (India)

    2012-07-01

    If we consider the Statistics there is drastic increase in dependence of batteries from year to year, due to necessity of power storage equipment at homes, power generating off grid and on grid Wind, PV systems, etc.. Where wind power is leading in renewable sector, there is a need to look at its development. Considering the scenario in India, most of the wind resource areas are far away from grid and the remaining areas which are near to grid are of low wind currents which is of no use connecting these equipment directly to grid. So, there is a need for a power storage utility to be integrated, such as the BNB (Ballistic Negatron Battery). In this situation a country like India need a battery which should be reliable, cheap and which can be industrialized. So this paper presents the concept of working, design, operation, adaptability of a Ballistic Negatron Battery. Unlike present batteries with low energy density, huge size, more weight, more charging time and low resistant to wear level, this Ballistic Negatron Battery comes with, 1) High energy storage capability (many multiples more than the present most advanced battery). 2) Very compact in size. 3) Almost negligible in weight compared to present batteries. 4) Charges with in very less time. 5) Never exhibits a wear level greater than zero. Seems like inconceivable but adoptable with simple physics. This paper will explains in detail the principle, model, design, construction and practical considerations considered in making this battery. (Author)

  12. High performance inkjet-printed metal oxide thin film transistors via addition of insulating polymer with proper molecular weight

    Science.gov (United States)

    Sun, Dawei; Chen, Cihai; Zhang, Jun; Wu, Xiaomin; Chen, Huipeng; Guo, Tailiang

    2018-01-01

    Fabrication of metal oxide thin film transistor (MOTFT) arrays using the inkjet printing process has caused tremendous interest for low-cost and large-area flexible electronic devices. However, the inkjet-printed MOTFT arrays usually exhibited a non-uniform geometry due to the coffee ring effect, which restricted their commercial application. Therefore, in this work, a strategy is reported to control the geometry and enhance device performance of inkjet-printed MOTFT arrays by the addition of an insulating polymer to the precursor solution prior to film deposition. Moreover, the impact of the polymer molecular weight (MW) on the geometry, chemical constitution, crystallization, and MOTFT properties of inkjet-printed metal oxide depositions was investigated. The results demonstrated that with an increase of MW of polystyrene (PS) from 2000 to 200 000, the coffee ring was gradually faded and the coffee ring effect was completely eliminated when MW reached 200 000, which is associated with the enhanced viscosity with the insulating polymer, providing a high resistance to the outward capillary flow, which facilitated the depinning of the contact line, leading to the elimination of the coffee ring. More importantly, the carrier mobility increased significantly from 4.2 cm2 V-1 s-1 up to 13.7 cm2 V-1 s-1 as PS MW increased from 2000 to 200 000, which was about 3 times that of the pristine In2O3 TFTs. Grazing incidence X-ray diffraction and X-ray photoelectron spectroscopy results indicated that PS doping of In2O3 films not only frustrated crystallization but also altered chemical constitution by enhancing the formation of the M-O structure, both of which facilitated the carrier transport. These results demonstrated that the simple polymer additive process provides a promising method that can efficiently control the geometry of MO arrays during inkjet printing and maximize the device performance of MOTFT arrays, which showed great potential for the application in next

  13. Influence of molecular weight on the short-channel effect in polymer-based field-effect transistors

    NARCIS (Netherlands)

    Tunc, Ali Veysel; Ecker, Bernhard; Dogruyol, Zekeriya; Juechter, Sabrina; Ugur, Ahmet Lutfi; Erdogmus, Ali; San, Sait Eren; Parisi, Juergen; von Hauff, Elizabeth

    2012-01-01

    In this study, we demonstrate how the intrinsic properties of a polymer can influence the electrical characteristics of organic field-effect transistors (OFETs). OFETs fabricated with three batches of poly[2-methoxy,5-(3′,7′-dimethyl-octyloxy)]-p-phenylene vinylene (MDMO-PPV) were investigated. The

  14. Advanced prepreg ballistic composites for military helmets

    OpenAIRE

    Dimeski, Dimko; Srebrenkoska, Vineta

    2014-01-01

    With the advancement of ballistic materials and technologies, the ballistic prepregs are becoming an essential construction technique for getting the maximum performance out of the high performance fibers. The ballistic prepregs help to maximize the engagement between fibers and high speed projectiles penetrating the ballistic material, thus reducing the amount of ballistic material required to defeat the projectiles. The backbone of lightweight ballistic materials is high perform...

  15. Ballistic Missile Intercept from UCAV

    Science.gov (United States)

    2011-12-01

    on the DPRK TPD-2 ballistic missile. A 3 degree-of-freedom ( 3DoF ) mathematical model was previously developed and used to simulate the trajectory...Characteristics(estimated) TPD-2 ICBM Data Input to Simulation(From [1]) Figure 3. Reach of TPD-2 Missile A 3DoF ballistic missile

  16. Ballistic transport and electronic structure

    NARCIS (Netherlands)

    Schep, Kees M.; Kelly, Paul J.; Bauer, Gerrit E.W.

    1998-01-01

    The role of the electronic structure in determining the transport properties of ballistic point contacts is studied. The conductance in the ballistic regime is related to simple geometrical projections of the Fermi surface. The essential physics is first clarified for simple models. For real

  17. Ballistic quality assurance

    International Nuclear Information System (INIS)

    Cassol, E.; Bonnet, J.; Porcheron, D.; Mazeron, J.J.; Peiffert, D.; Alapetite, C.

    2012-01-01

    This review describes the ballistic quality assurance for stereotactic intracranial irradiation treatments delivered with Gamma Knife R either dedicated or adapted medical linear accelerators. Specific and periodic controls should be performed in order to check the mechanical stability for both irradiation and collimation systems. If this step remains under the responsibility of the medical physicist, it should be done in agreement with the manufacturer's technical support. At this time, there are no recent published guidelines. With technological developments, both frequency and accuracy should be assessed in each institution according to the treatment mode: single versus hypo-fractionated dose, circular collimator versus micro-multi-leaf collimators. In addition, 'end-to-end' techniques are mandatory to find the origin of potential discrepancies and to estimate the global ballistic accuracy of the delivered treatment. Indeed, they include frames, non-invasive immobilization devices, localizers, multimodal imaging for delineation and in-room positioning imaging systems. The final precision that could be reasonably achieved is more or less 1 mm. (authors)

  18. Organic field-effect transistors as a test-bed for molecular electronics : a combined study with large-area molecular junctions

    NARCIS (Netherlands)

    Asadi, K.; Katsouras, I.; Harkema, J.; Gholamrezaie, F.; Smits, E.C.P.; Biscarini, F.; Blom b, P.W.M.; Leeuw, D.M. de

    2012-01-01

    The contact resistance of a transistor using self-assembled monolayer (SAM)-modified source and drain electrodes depends on the SAM tunnel resistance, the height of the injection barrier and the morphology at the contact. To disentangle the different contributions, we have combined here the

  19. Organic field-effect transistors as a test-bed for molecular electronics : A combined study with large-area molecular junctions

    NARCIS (Netherlands)

    Asadi, Kamal; Katsouras, Ilias; Harkema, Jan; Gholamrezaie, Fatemeh; Smits, Edsger C. F.; Biscarini, Fabio; Blom, Paul W. M.; de Leeuw, Dago M.

    2012-01-01

    The contact resistance of a transistor using self-assembled monolayer (SAM)-modified source and drain electrodes depends on the SAM tunnel resistance, the height of the injection barrier and the morphology at the contact. To disentangle the different contributions, we have combined here the

  20. Reducing leakage currents in n-channel organic field-effect transistors using molecular dipole monolayers on nanoscale oxides.

    Science.gov (United States)

    Martínez Hardigree, Josué F; Dawidczyk, Thomas J; Ireland, Robert M; Johns, Gary L; Jung, Byung-Jun; Nyman, Mathias; Osterbacka, Ronald; Marković, Nina; Katz, Howard E

    2013-08-14

    Leakage currents through the gate dielectric of thin film transistors remain a roadblock to the fabrication of organic field-effect transistors (OFETs) on ultrathin dielectrics. We report the first investigation of a self-assembled monolayer (SAM) dipole as an electrostatic barrier to reduce leakage currents in n-channel OFETs fabricated on a minimal, leaky ∼10 nm SiO2 dielectric on highly doped Si. The electric field associated with 1H,1H,2H,2H-perfluoro-octyltriethoxysilane (FOTS) and octyltriethoxysilane (OTS) dipolar chains affixed to the oxide surface of n-Si gave an order of magnitude decrease in gate leakage current and subthreshold leakage and a two order-of-magnitude increase in ON/OFF ratio for a naphthalenetetracarboxylic diimide (NTCDI) transistor. Identically fabricated devices on p-Si showed similarly reduced leakage and improved performance for oxides treated with the larger dipole FOTS monolayer, while OTS devices showed poorer transfer characteristics than those on bare oxide. Comparison of OFETs on both substrates revealed that relative device performance from OTS and FOTS treatments was dictated primarily by the organosilane chain and not the underlying siloxane-substrate bond. This conclusion is supported by the similar threshold voltages (VT) extrapolated for SAM-treated devices, which display positive relative VT shifts for FOTS on either substrate but opposite VT shifts for OTS treatment on n-Si and p-Si. Our results highlight the potential of dipolar SAMs as performance-enhancing layers for marginal quality dielectrics, broadening the material spectrum for low power, ultrathin organic electronics.

  1. High operational and environmental stability of high-mobility conjugated polymer field-effect transistors through the use of molecular additives

    KAUST Repository

    Nikolka, Mark

    2016-12-12

    Due to their low-temperature processing properties and inherent mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates for enabling flexible electronic circuits and displays. Much progress has been made on materials performance; however, there remain significant concerns about operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode displays. Here, we investigate the physical mechanisms behind operational and environmental degradation of high-mobility, p-type polymer FETs and demonstrate an effective route to improve device stability. We show that water incorporated in nanometre-sized voids within the polymer microstructure is the key factor in charge trapping and device degradation. By inserting molecular additives that displace water from these voids, it is possible to increase the stability as well as uniformity to a high level sufficient for demanding industrial applications.

  2. Ballistic Trauma of Limbs

    Science.gov (United States)

    Lamah, Léopold; Keita, Damany; Marie Camara, Ibrahima; Lamine Bah, Mohamed; Sory, Sidimé; Diallo, Mamadou Moustapha

    2017-01-01

    The objective of our study was to report the management and follow-up of a particular case of ballistic trauma and to do the literature review. Observation: A 35-year-old patient, a trader who was the victim of a firearm accident under not very clear circumstances. He was admitted to the emergency department after 3 hours. Clinically, the patient had significant bleeding in the arm and was in a state of clouding of consciousness. We could notice on the right arm, a posterior large transfixing wound of 1 cm and a 6 cm one on the antero-internal side. The limb was cold with a small and thready pulse. Sensitivity was decreased in the radial nerve area. The radiograph showed bone comminution from the middle 1/3 to the superior 1/3 of the humeral diaphysis. The treatment was orthopedic (after debridement) by scapula-brachio-ante-brachiopalmar plaster splint with thoracic strap. The wound healed in 46 days and the patient resumed his activities after 11 months and 2 weeks. Conclusion: The authors presented the value of using the scapulo-brachio-palmar plaster splints with thoracic strap in some severe upper limb trauma in the absence of the external fixator. PMID:28567155

  3. Ambipolar Phosphorene Field Effect Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Das, Saptarshi [Center for Nanoscale Material and ‡Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439, United States; Demarteau, Marcel [Center for Nanoscale Material and ‡Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439, United States; Roelofs, Andreas [Center for Nanoscale Material and ‡Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439, United States

    2014-10-23

    Two dimensional materials provide an intriguing platform to investigate rich physical phenomena which could ultimately lead to the development of innovative nanotechnologies (1-17). Semiconducting black phosphorous (BP) with high carrier mobility (18-20), anisotropic transport (21, 22) and tunable bandgap (23, 24) is the most recent addition to this exotic class of two dimensional materials. In this article we experimentally demonstrate room temperature quasi ballistic transport of both holes and electrons in ionic liquid gated black phosphorous (BP) field effect transistors (FET) with sub-100nm channel length. The carrier mean free path (mfp) was found to be 15nm for the holes and 5nm for the electrons. By improving the carrier injection through superior electrostatic gate control (EOT=1.5nm), highly symmetric ambipolar conduction with record high hole current of ~0.78mA/µm and electron current of ~0.68mA/µm are achieved for VDD=0.2V. The extracted record low contact resistance of 220Ω-µm is similar to the state of the art Si technology. This is also the best contact resistance value achieved for any two dimensional metal-semiconductor interfaces. Finally, we provide an analytical framework to compare the experimental results with ballistic simulations which includes quantum capacitance considerations.

  4. Thermoplastic composites for ballistic application

    Science.gov (United States)

    Song, John Whachong

    2003-08-01

    Systematic studies of thermoplastic composites on ballistic impact failure and kinetic energy absorption mechanisms were examined on both semicrystalline and amorphous polymer matrix composites. By taking advantages of the nature of thermoplastic polymers, the main objective of this research was to develop armor grade composites with thermoplastic resin matrices through a understanding of the microscopic as well as macroscopic characteristics of the composites. In both semicrystalline neat resin and composites, the crystal formation and the degree of crystallinity of the polymer matrix were greatly influenced by processing conditions, especially, the cooling rate. As the cooling rate is decreased, more perfect crystal formation and amorphous rearrangements were evident vs cooling at higher rates. The relative degree of crystallinity of semicrystalline matrix composites was calculated using dynamic mechanical analysis (DMA). These values were in good agreement with neat resin values obtained via differantial scanning calorimeter (DSC). Unfortunately, the morphological perfection of the semicrystalline matrix exhibits negligible advantage on ballistic impact resistance. Failure of the composites under ballistic impact was localized and the kinetic energy absorption was low. Amorphous polymers were also greatly influenced by processing conditions. Furthermore, amorphous polymers exhibit large processing windows in terms of processing temperature, which allows the various processing manipulations for ballistic composite fabrication. As increasing processing temperature, glass transition temperature of the polymer and stiffness of the composite increased due to the morphological perfection and level of wetting, respectively. Ballistic impact resistance was found to be inversely proportional to the stiffness of the composites. Fiber wetting characteristics and polymer morphology changes during the cooling process are considered to be major contributors of this behavior

  5. The Impact of Molecular p-Doping on Charge Transport in High-Mobility Small-Molecule/Polymer Blend Organic Transistors

    KAUST Repository

    Paterson, Alexandra F.

    2017-12-27

    Molecular doping is a powerful tool with the potential to resolve many of the issues currently preventing organic thin-film transistor (OTFT) commercialization. However, the addition of dopant molecules into organic semiconductors often disrupts the host lattice, introducing defects and harming electrical transport. New dopant-based systems that overcome practical utilization issues, while still reaping the electrical performance benefits, would therefore be extremely valuable. Here, the impact of p-doping on the charge transport in blends consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), the polymer indacenodithiophene-benzothiadiazole (C16IDT-BT), and the molecular dopant C60F48 is investigated. Electrical field-effect measurements indicate that p-doping not only enhances the average saturation mobility from 1.4 to 7.8 cm2 V−1 s−1 over 50 devices (maximum values from around 4 to 13 cm2 V−1 s−1), but also improves bias–stress stability, contact resistance, threshold voltage, and the overall device-to-device performance variation. Importantly, materials characterization using X-ray diffraction, X-ray photoemission spectroscopy, and ultraviolet photoemission spectroscopy, combined with charge transport modeling, reveal that effective doping is achieved without perturbing the microstructure of the polycrystalline semiconductor film. This work highlights the remarkable potential of ternary organic blends as a simple platform for OTFTs to achieve all the benefits of doping, with none of the drawbacks.

  6. Impact of fullerene molecular weight on P3HT:PCBM microstructure studied using organic thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Labram, John G.; Bradley, Donal D.C.; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2BW (United Kingdom); Kirkpatrick, James [Mathematical Institute, 24-29 St Giles, University of Oxford, Oxford OX1 3LB (United Kingdom)

    2011-11-15

    The clustering and diffusion of C{sub 71}-butyric acid methyl ester (PC{sub 71}BM) in poly(3-hexylthiophene) (P3HT) has been studied using single layer blend and bilayer organic field-effect transistors (OFETs) and by atomic force microscopy (AFM). P3HT:PC{sub 71}BM blend based OFETs were found to undergo phase-segregation upon annealing, which was detectable as a fall in electron mobility with increasing annealing temperature. By employing carefully designed bilayer P3HT:PC{sub 71}BM OFETs, the diffusion-properties of PC{sub 71}BM in P3HT could additionally be inferred from electron mobility measurements. It was found that the prerequisite annealing temperatures for detectable PC{sub 71}BM clustering and diffusion in P3HT was approximately 20 C higher than for PC{sub 61}BM. The diffusion coefficient of PC{sub 61}BM in P3HT was found to be several times higher that that of PC{sub 71}BM. The present work provides unique insights into the diffusion process of fullerenes in conjugated polymers and could prove highly valuable for future materials development and device optimization. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Magnetic bipolar transistor

    OpenAIRE

    Fabian, Jaroslav; Zutic, Igor; Sarma, S. Das

    2003-01-01

    A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime. It is predicted that the current amplification of the transistor can be tuned by spin.

  8. Analysis of behind the armor ballistic trauma.

    Science.gov (United States)

    Wen, Yaoke; Xu, Cheng; Wang, Shu; Batra, R C

    2015-05-01

    The impact response of body armor composed of a ceramic plate with an ultrahigh molecular weight polyethylene (UHMWPE) fiber-reinforced composite and layers of UHMWPE fibers shielding a block of ballistic gelatin has been experimentally and numerically analyzed. It is a surrogate model for studying injuries to human torso caused by a bullet striking body protection armor placed on a person. Photographs taken with a high speed camera are used to determine deformations of the armor and the gelatin. The maximum depth of the temporary cavity formed in the ballistic gelatin and the peak pressure 40mm behind the center of the gelatin front face contacting the armor are found to be, respectively, ~34mm and ~15MPa. The Johnson-Holmquist material model has been used to simulate deformations and failure of the ceramic. The UHMWPE fiber-reinforced composite and the UHMWPE fiber layers are modeled as linear elastic orthotropic materials. The gelatin is modeled as a strain-rate dependent hyperelastic material. Values of material parameters are taken from the open literature. The computed evolution of the temporary cavity formed in the gelatin is found to qualitatively agree with that seen in experiments. Furthermore, the computed time histories of the average pressure at four points in the gelatin agree with the corresponding experimentally measured ones. The maximum pressure at a point and the depth of the temporary cavity formed in the gelatin can be taken as measures of the severity of the bodily injury caused by the impact; e.g. see the United States National Institute of Justice standard 0101.06-Ballistic Resistance of Body Armor. Copyright © 2015 Elsevier Ltd. All rights reserved.

  9. Ballistic materials in MR imaging

    International Nuclear Information System (INIS)

    Smith, A.S.; Hurst, G.C.; Duerk, J.L.; Diaz, P.J.

    1990-01-01

    This paper reports on the most common ballistic materials available in the urban setting studied for deflection force, rotation, heating, and imaging artifact at 1.5 T to determine potential efficacy and safety for imaging patients with ballistic injuries. Twenty-eight missiles were tested, covering the range of bullet types and materials suggested by the Cleveland Police Department. Deflection force was measured by the New method. Rotation was studied by evaluating bullets in a 10% (W/W) ballistic gelating after 30 minutes with the long axis of the bullet placed parallel and perpendicular to the z axis. Heating was measured with alcohol thermometers imaged for 1 hour alternately with FESUM and spin-echo sequences (RF absorption w/Kg and 0.033 w/Kg). Image artifact evaluation of routine sequences was performed

  10. Test Equipment Specifications Transistor

    OpenAIRE

    Didiek Andiana Ramadan; Drs. Linga Hermanto, MMSI Drs. Linga Hermanto, MMSI

    2005-01-01

    In this paper, we design a test apparatus Transistor Specification. Specification is atype of transistor is a transistor and common emitter current reinforcement value ( βDC ). The system will provide information in the form of an LED display emits greenlight when the tested types of NPN transistor and the second LED emits blue lightwhen the tested types of PNP transistors.To test the value of β, whose value is proportional to the display used by the collectorcurrent Ic.

  11. BALLISTIC RESISTANT ARTICLES COMPRISING TAPES

    NARCIS (Netherlands)

    VAN DER EEM, JORIS; HARINGS, JULES; JANSE, GERARDUS; TJADEN, HENDRIK

    2015-01-01

    The invention pertains to a ballistic-resistant moulded article comprising a compressed stack of sheets comprising reinforcing tapes having a tensile strength of at least 1.0 GPa, a tensile modulus of at least 40 GPa, and a tensile energy-to-break of at least 15 J/g, the direction of the tapes

  12. Optimization theory for ballistic conversion

    NARCIS (Netherlands)

    Xie, Yanbo; Versluis, Andreas Michel; van den Berg, Albert; Eijkel, Jan C.T.

    2016-01-01

    The growing demand of renewable energy stimulates the exploration of new materials and methods for clean energy. We recently demonstrated a high efficiency and power density energy conversion mechanism by using jetted charged microdroplets, termed as ballistic energy conversion. Hereby, we model and

  13. Ballistic study of Tensylon®–based panels

    Directory of Open Access Journals (Sweden)

    L-C. Alil

    2018-06-01

    Full Text Available Ballistic protection is a matter of interest requested by civilian as well as military needs. The last decade has witnessed an increase in the use of light weight and efficient armour systems. These panels may be used for body protection as well as light vehicle protection against small calibres or to enhance the protection level of heavier vehicles with decreasing or maintaining their weight penalty. Ultra high molecular weight polyethylene is a material of interest for light weight armour applications. The authors designed panels made of hot–pressed Tensylon® in different configurations with thin steel sheets as a backing and shield protection. Comparison of their ballistic performance to the theory predictions reveals the improved ballistic response of the panels. In addition, a non–pressed Tensylon® panel has been tested in order to facilitate the observations of the failure mechanisms inside the panels. Even if not suitable for practical use, such non–pressed panels clearly reveal the dynamic processes at micro–scale that occur during the impact. The failure mechanisms of the material under bullet penetration are discussed based on photography, optical microscopy and scanning electron microscopy. The supposed effects of the panel pressing are discussed based on the observed difference between pressed and non–pressed structures ballistic response.

  14. Influence of channel material properties on performance of nanowire transistors

    Science.gov (United States)

    Razavi, Pedram; Fagas, Giorgos; Ferain, Isabelle; Yu, Ran; Das, Samaresh; Colinge, Jean-Pierre

    2012-06-01

    The performance of germanium and silicon inversion-mode and junctionless nanowire field-effect transistors are investigated using three-dimensional quantum mechanical simulations in the ballistic transport regime and within the framework of effective-mass theory for different channel materials and orientations. Our study shows that junctionless nanowire transistors made using n-type Ge or Si nanowires as a channel material are more immune to short-channel effects than conventional inversion-mode nanowire field-effect transistors. As a result, these transistors present smaller subthreshold swing, less drain-induced barrier-lowering, lower source-to-drain tunneling, and higher Ion/Ioff ratio for the same technology node and low standby power technologies. We also show that the short-channel characteristics of Ge and Si junctionless nanowire transistors, unlike the inversion-mode nanowire transistors, are very similar. The results are explained through a detailed analysis on the effect of the channel crystallographic orientation, effective masses, and dielectric constant on electrical characteristics.

  15. Ballistic Evaluation of 2060 Aluminum

    Science.gov (United States)

    2016-05-24

    compared with other ballistic- grade AAs, namely AA2195 and AA2139. The results of these experiments were used to derive the acceptance tables for AA2060...contributions of the following people who made this work possible: program lead Brian Placzankis of ARL’s Coatings, Corrosion and Engineered Polymers Branch...properties as the AA2195 alloy and therefore became the basis for a fiscal year 2012 OSD-funded DAC program to fully validate and ultimately transition

  16. High-Performance n-Channel Organic Transistors Using High-Molecular-Weight Electron-Deficient Copolymers and Amine-Tailed Self-Assembled Monolayers.

    Science.gov (United States)

    Wang, Yang; Hasegawa, Tsukasa; Matsumoto, Hidetoshi; Mori, Takehiko; Michinobu, Tsuyoshi

    2018-03-01

    While high-performance p-type semiconducting polymers are widely reported, their n-type counterparts are still rare in terms of quantity and quality. Here, an improved Stille polymerization protocol using chlorobenzene as the solvent and palladium(0)/copper(I) as the catalyst is developed to synthesize high-quality n-type polymers with number-average molecular weight up to 10 5 g mol -1 . Furthermore, by sp 2 -nitrogen atoms (sp 2 -N) substitution, three new n-type polymers, namely, pBTTz, pPPT, and pSNT, are synthesized, and the effect of different sp 2 -N substitution positions on the device performances is studied for the first time. It is found that the incorporation of sp 2 -N into the acceptor units rather than the donor units results in superior crystalline microstructures and higher electron mobilities. Furthermore, an amine-tailed self-assembled monolayer (SAM) is smoothly formed on a Si/SiO 2 substrate by a simple spin-coating technique, which can facilitate the accumulation of electrons and lead to more perfect unipolar n-type transistor performances. Therefore, a remarkably high unipolar electron mobility up to 5.35 cm 2 V -1 s -1 with a low threshold voltage (≈1 V) and high on/off current ratio of ≈10 7 is demonstrated for the pSNT-based devices, which are among the highest values for unipolar n-type semiconducting polymers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Field Effect Transistor in Nanoscale

    Science.gov (United States)

    2017-04-26

    significant alteration in transport behaviour of these molecular junctions. 15. SUBJECT TERMS Theory , Nanoscale, Field Effect Transistor (FET), Devices...Density Functional Theory (DFT), Non-equilibrium Green Function 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18. NUMBER OF PAGES     13...Keep in mind the amount of funding you received relative to the amount of effort you put into the report. References: 1. J. R. Heath and M

  18. Artifacts that mimic ballistic magnetoresistance

    International Nuclear Information System (INIS)

    Egelhoff, W.F. . E-mail : egelhoff@nist.gov; Gan, L.; Ettedgui, H.; Kadmon, Y.; Powell, C.J.; Chen, P.J.; Shapiro, A.J.; McMichael, R.D.; Mallett, J.J.; Moffat, T.P.; Stiles, M.D.; Svedberg, E.B.

    2005-01-01

    We have investigated the circumstances underlying recent reports of very large values of ballistic magnetoresistance (BMR) in nanocontacts between magnetic wires. We find that the geometries used are subject to artifacts due to motion of the wires that distort the nanocontact thereby changing its electrical resistance. Since these nanocontacts are often of atomic scale, reliable experiments would require stability on the atomic scale. No method for achieving such stability in macroscopic wires is apparent. We conclude that macroscopic magnetic wires cannot be used to establish the validity of the BMR effect

  19. The Cooperative Ballistic Missile Defence Game

    NARCIS (Netherlands)

    Evers, L.; Barros, A.I.; Monsuur, H.

    2013-01-01

    The increasing proliferation of ballistic missiles and weapons of mass destruction poses new risks worldwide. For a threatened nation and given the characteristics of this threat a layered ballistic missile defence system strategy appears to be the preferred solution. However, such a strategy

  20. Solution-Processable Low-Molecular Weight Extended Arylacetylenes: Versatile p-Type Semiconductors for Field-Effect Transistors and Bulk Heterojunction Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Silvestri, Fabio [Northwestern Univ., Evanston, IL (United States); ETH Zurich (Switzerland); Marrocchi, Assunta [Univ. of Perugia (Italy); Seri, Mirko [Univ. of Perugia (Italy); Kim, Choongik [Northwestern Univ., Evanston, IL (United States); Marks, Tobin J. [Northwestern Univ., Evanston, IL (United States); Facchetti, Antonio [Northwestern Univ., Evanston, IL (United States); Taticchi, Aldo [Univ. of Perugia (Italy)

    2010-04-08

    We report the synthesis and characterization of a series of five extended arylacetylenes, 9,10-bis-{[m,p-bis(hexyloxy)phenyl]ethynyl}-anthracene (A-P6t, 1), 9,10-bis-[(p-{[m,p-bis(hexyloxy) phenyl]ethynyl}phenyl)ethynyl]-anthracene (PA-P6t, 2), 4,7-bis-{[m,p-bis(hexyloxy)phenyl]ethynyl}-2,1,3-benzothiadiazole (BTZ-P6t, 5), 4,7-bis(5-{[m,p-bis(hexyloxy)phenyl]ethynyl}thien-2-yl)-2,1,3-benzothiadiazole (TBTZ-P6t, 6), and 7,7'-({[m,p-bis(hexyloxy)phenyl]ethynyl}-2,1,3-benzothiadiazol-4,4'-ethynyl)-2,5-thiophene (BTZT-P6t, 7), and two arylvinylenes, 9,10-bis-{(E)-[m,p-bis(hexyloxy)phenyl]vinyl}-anthracene (A-P6d, 3), 9,10-bis-[(E)-(p-{(E)-[m,p-bis(hexyloxy)phenyl]vinyl}phenyl)vinyl]-anthracene (PA-P6d, 4). Trends in optical absorption spectra and electrochemical redox processes are first described. Next, the thin-film microstructures and morphologies of films deposited from solution under various conditions are investigated, and organic field-effect transistors (OFETs) and bulk heterojunction photovoltaic (OPV) cells fabricated. We find that substituting acetylenic for olefinic linkers on the molecular cores significantly enhances device performance. OFET measurements reveal that all seven of the semiconductors are FET-active and, depending on the backbone architecture, the arylacetylenes exhibit good p-type mobilities (μ up to ~0.1 cm2 V-1 s-1) when optimum film microstructural order is achieved. OPV cells using [6,6]-phenyl C61-butyric acid methyl ester (PCBM) as the electron acceptor exhibit power conversion efficiencies (PCEs) up to 1.3% under a simulated AM 1.5 solar irradiation of 100 mW/cm2. These results demonstrate that arylacetylenes are promising hole-transport materials for p-channel OFETs and promising donors for organic solar cells applications. A direct correlation between OFET arylacetylene hole mobility and OPV performance is identified and analyzed.

  1. Ballistic representation for kinematic access

    Science.gov (United States)

    Alfano, Salvatore

    2011-01-01

    This work uses simple two-body orbital dynamics to initially determine the kinematic access for a ballistic vehicle. Primarily this analysis was developed to assess when a rocket body might conjunct with an orbiting satellite platform. A family of access opportunities can be represented as a volume for a specific rocket relative to its launch platform. Alternately, the opportunities can be represented as a geographical footprint relative to aircraft or satellite position that encompasses all possible launcher locations for a specific rocket. A thrusting rocket is treated as a ballistic vehicle that receives all its energy at launch and follows a coasting trajectory. To do so, the rocket's burnout energy is used to find its equivalent initial velocity for a given launcher's altitude. Three kinematic access solutions are then found that account for spherical Earth rotation. One solution finds the maximum range for an ascent-only trajectory while another solution accommodates a descending trajectory. In addition, the ascent engagement for the descending trajectory is used to depict a rapid access scenario. These preliminary solutions are formulated to address ground-, sea-, or air-launched vehicles.

  2. Nanoscale Vacuum Channel Transistor.

    Science.gov (United States)

    Han, Jin-Woo; Moon, Dong-Il; Meyyappan, M

    2017-04-12

    Vacuum tubes that sparked the electronics era had given way to semiconductor transistors. Despite their faster operation and better immunity to noise and radiation compared to the transistors, the vacuum device technology became extinct due to the high power consumption, integration difficulties, and short lifetime of the vacuum tubes. We combine the best of vacuum tubes and modern silicon nanofabrication technology here. The surround gate nanoscale vacuum channel transistor consists of sharp source and drain electrodes separated by sub-50 nm vacuum channel with a source to gate distance of 10 nm. This transistor performs at a low voltage (3 microamperes). The nanoscale vacuum channel transistor can be a possible alternative to semiconductor transistors beyond Moore's law.

  3. Assessment of Ballistic Performance for Transparent Material

    Directory of Open Access Journals (Sweden)

    Basim M. Fadhil

    2014-05-01

    Full Text Available A finite element method was used to investigate the ballistic behavior of Polymethylmethacrylate (PMMA under impact loading by spherical steel projectile with different ranges of velocities. Three different target thicknesses were used in the experimental and the numerical works. A mathematical model has been used for the ballistic limit based on the experimental results. It has been found that projectile velocity and target thickness play an important role in the ballistic behavior of PMMA. A good agreement was found between the numerical, experimental, and the analytical result.

  4. Ballistic Rail Gun Soft Recovery Facility

    Data.gov (United States)

    Federal Laboratory Consortium — The Ballistic Rail Gun Soft Recovery Facility accommodates a 155mm Howitzer, fired horizontally into a 104-foot long water trough to slow the projectile and recover...

  5. Modeling and experiments on ballistic impact into UHMWPE yarns using flat and saddle-nosed projectiles

    NARCIS (Netherlands)

    Phoenix, S.L.; Heisserer, U.; Werff, H. van der; Jagt-Deutekom , M.J. van der

    2017-01-01

    Yarn shooting experiments were conducted to determine the ballistically-relevant, Young’s modulus and tensile strength of ultra-high molecular weight polyethylene (UHMWPE) fiber. Target specimens were Dyneema® SK76 yarns (1760 dtex), twisted to 40 turns/m, and initially tensioned to stresses ranging

  6. Vertical organic transistors

    Science.gov (United States)

    Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

    2015-11-01

    Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

  7. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  8. Transistor-based interface circuitry

    Science.gov (United States)

    Taubman, Matthew S [Richland, WA

    2004-02-24

    Among the embodiments of the present invention is an apparatus that includes a transistor, a servo device, and a current source. The servo device is operable to provide a common base mode of operation of the transistor by maintaining an approximately constant voltage level at the transistor base. The current source is operable to provide a bias current to the transistor. A first device provides an input signal to an electrical node positioned between the emitter of the transistor and the current source. A second device receives an output signal from the collector of the transistor.

  9. Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Joglekar, S.; Azize, M.; Palacios, T. [Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Beeler, M.; Monroy, E. [Université Grenoble-Alpes, 38000 Grenoble (France); CEA Grenoble, INAC-PHELIQS, 38000 Grenoble (France)

    2016-07-25

    Ohmic contacts fabricated by regrowth of n{sup +} GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.

  10. In(0.52)Al(0.48)/In(0.53)Ga(0.47)As heterojunction bipolar transistor on GaAs by molecular beam epitaxy

    Science.gov (United States)

    Won, T.; Agarwala, S.; Morkoc, H.

    1988-12-01

    The successful operation of In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As NpN double heterojunction bipolar transistors grown on GaAs substrates is reported. A 10-period AlAs/In(0.52)Al(0.48)As (20 A/20 A) strained-layer superlattice was repeated twice with intervening undoped In(0.52)Al(0.48)As layers to suppress the propagation of threading dislocations to the surface. The typical common emitter gain in 50 x 50 micron-squared emitter area devices was 50, with a maximum of 63, at a collector current density of 2000 A/sq cm.

  11. Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal - oxide - semiconductor field-effect transistors: Effective electron mobility

    International Nuclear Information System (INIS)

    Ragnarsson, L.-A degree.; Guha, S.; Copel, M.; Cartier, E.; Bojarczuk, N. A.; Karasinski, J.

    2001-01-01

    We report on high effective mobilities in yttrium-oxide-based n-channel metal - oxide - semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y 2 O 3 on top of a thin layer of interfacial SiO 2 . The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO 2 -based MOSFETs at higher fields with peak mobilities at approximately 210 cm 2 /Vs. [copyright] 2001 American Institute of Physics

  12. 24th International Symposium on Ballistics

    Science.gov (United States)

    2008-09-26

    2008s.ppt Experimental Set-up Reverse ballistics experiments Flash radiography used to measure position of nose and tail of rod versus time 3 IBS 2008s.ppt...s Ballistic Testing. [VC]max vs Velocity Thorax -Kevlar Thorax -Twaron Thorax -Zylon Abdomen-Kevlar Abdomen-Twaron Abdomen-Zylon 25% Severe Thoracic...Injury 25% Severe Abdominal Injury -20 -10 0 10 20 30 40 50 60 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 D is pl ac em en tm m Time sec Displacement vs Time Thorax

  13. Numerical Simulation of Ballistic Impact of Layered Aluminum Nitride Ceramic

    Science.gov (United States)

    2015-09-01

    ARL-TR-7416 ● SEP 2015 US Army Research Laboratory Numerical Simulation of Ballistic Impact of Layered Aluminum Nitride Ceramic...of Ballistic Impact of Layered Aluminum Nitride Ceramic by JD Clayton Weapons and Materials Research Directorate, ARL...Numerical Simulation of Ballistic Impact of Layered Aluminum Nitride Ceramic 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6

  14. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  15. Transistor scaling with novel materials

    OpenAIRE

    Meikei Ieong; Vijay Narayanan; Dinkar Singh; Anna Topol; Victor Chan; Zhibin Ren

    2006-01-01

    Complementary metal-oxide-semiconductor (CMOS) transistor scaling will continue for at least another decade. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. Here we discuss the challenges and opportunities of transistor scaling for the next five to ten years.

  16. Area Ballistic Missile Defense Coordinator and the Airborne Laser: Creating Ballistic Missile Defense Unity of Effort

    National Research Council Canada - National Science Library

    Oms, Pedro

    2003-01-01

    Theater Ballistic Missile Defense (TBMD) is a challenging mission area for any Theater Combatant or Joint Task Force Commander, and one he must focus on to mitigate the strategic effects this "terror" weapon can impart...

  17. Quantum Thermal Transistor.

    Science.gov (United States)

    Joulain, Karl; Drevillon, Jérémie; Ezzahri, Younès; Ordonez-Miranda, Jose

    2016-05-20

    We demonstrate that a thermal transistor can be made up with a quantum system of three interacting subsystems, coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved by determining the heat fluxes by means of the strong-coupling formalism. For the case of three interacting spins, in which one of them is coupled to the other two, that are not directly coupled, it is shown that high amplification can be obtained in a wide range of energy parameters and temperatures. The proposed quantum transistor could, in principle, be used to develop devices such as a thermal modulator and a thermal amplifier in nanosystems.

  18. Ballistic transport in semiconductor nanostructures: From quasi ...

    Indian Academy of Sciences (India)

    By suitable design it is possible to achieve quasi-ballistic transport in semiconductor nanostructures over times up to the ps-range. Monte-Carlo simulations reveal that under these conditions phase-coherent real-space oscillations of an electron ensemble, generated by fs-pulses become possible in wide potential wells.

  19. Capability of satellite-aided ballistic capture

    Science.gov (United States)

    Luo, Z.-F.; Topputo, F.

    2017-07-01

    In this paper we study a special instance of ballistic capture dynamics: the case in which the capture orbit about a planet experiences a close passage to one or more of its natural satellites. The capability of the satellites in improving ballistic capture is assessed. The dynamical framework considers at least the gravitational attractions of the Sun, the planet, and its satellites, all acting on a massless particle. The effect of the satellites is introduced explicitly by modifying a previously developed method, which relies on three-dimensional stable sets and n-body dynamics with precise ephemeris. Once a stability criterium is defined, initial conditions defined over a computational grid are integrated forward and backward. This allows us to classify orbits into different sets. Ballistic capture orbits with prescribed features are generated by manipulating these sets. Two indices, namely the hyperbolic velocity and the stability index, are used to assess the performance of pre- and post-capture portions, respectively. A Pareto frontier is used to extract orbits of practical interest. Case studies are performed in the context of Earth and Jupiter environments. Comparing to the situation with no moons, the satellite-aided ballistic capture can evidently increase the pre-capture energy and post-capture stability, so making it possible to have permanent capture of a particle at zero-cost. This is a desirable feature in mission design.

  20. The Internal Ballistics of an Air Gun

    Science.gov (United States)

    Denny, Mark

    2011-01-01

    The internal ballistics of a firearm or artillery piece considers the pellet, bullet, or shell motion while it is still inside the barrel. In general, deriving the muzzle speed of a gunpowder firearm from first principles is difficult because powder combustion is fast and it very rapidly raises the temperature of gas (generated by gunpowder…

  1. Electron Interference in Ballistic Graphene Nanoconstrictions

    DEFF Research Database (Denmark)

    Baringhaus, Jens; Settnes, Mikkel; Aprojanz, Johannes

    2016-01-01

    We realize nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC mesa structures. The high quality of our devices allows the observation of a number of electronic quantum interference phenomena. The transmissions of Fabry-Perot-like resonances are probed...

  2. Ballistic transport in semiconductor nanostructures: From quasi ...

    Indian Academy of Sciences (India)

    Abstract. By suitable design it is possible to achieve quasi-ballistic transport in semi- conductor nanostructures over times up to the ps-range. Monte-Carlo simulations reveal that under these conditions phase-coherent real-space oscillations of an electron ensem- ble, generated by fs-pulses become possible in wide ...

  3. Optimization theory for ballistic energy conversion

    NARCIS (Netherlands)

    Xie, Yanbo; Versluis, Michel; Van Den Berg, Albert; Eijkel, Jan C.T.

    2016-01-01

    The growing demand of renewable energy stimulates the exploration of new materials and methods for clean energy. We recently demonstrated a high efficiency and power density energy conversion mechanism by using jetted charged microdroplets, termed as ballistic energy conversion. Hereby, we model and

  4. Is there ballistic transport in metallic nano-objects? Ballistic versus diffusive contributions

    International Nuclear Information System (INIS)

    Garcia, N; Bai Ming; Lu Yonghua; Munoz, M; Cheng Hao; Levanyuk, A P

    2007-01-01

    When discussing the resistance of an atomic-or nanometre-size contact we should consider both its ballistic and its diffusive contributions. But there is a contribution of the leads to the resistance of the contact as well. In this context, the geometry and the roughness of the surfaces limiting the system will contribute to the resistance, and these contributions should be added to the ideal ballistic resistance of the nanocontact. We have calculated, for metallic materials, the serial resistance of the leads arising from the roughness, and our calculations show that the ohmic resistance is as important as the ballistic resistance of the constriction. The classical resistance is a lower limit to the quantum resistance of the leads. Many examples of earlier experiments show that the mean free path of the transport electrons is of the order of the size of the contacts or the leads. This is not compatible with the idea of ballistic transport. This result may put in serious difficulties the current, existing interpretation of experimental data in metals where only small serial resistances compared with the ballistic component of the total resistance have been taken into account. The two-dimensional electron gas (2DEG) is also discussed and the serial corrections appear to be smaller than for metals. Experiments with these last systems are proposed that may reveal new interesting aspects in the physics of ballistic and diffusive transport

  5. Is there ballistic transport in metallic nano-objects? Ballistic versus diffusive contributions

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, N [Laboratorio de Fisica de Sistemas Pequenos y NanotecnologIa, Consejo Superior de Investigaciones CientIficas (CSIC), Madrid 28006 (Spain); Bai Ming [Laboratorio de Fisica de Sistemas Pequenos y NanotecnologIa, Consejo Superior de Investigaciones CientIficas (CSIC), Madrid 28006 (Spain); Lu Yonghua [Laboratorio de Fisica de Sistemas Pequenos y NanotecnologIa, Consejo Superior de Investigaciones CientIficas (CSIC), Madrid 28006 (Spain); Munoz, M [Laboratorio de Fisica de Sistemas Pequenos y NanotecnologIa, Consejo Superior de Investigaciones CientIficas (CSIC), Madrid 28006 (Spain); Cheng Hao [Laboratorio de Fisica de Sistemas Pequenos y NanotecnologIa, Consejo Superior de Investigaciones CientIficas (CSIC), Madrid 28006 (Spain); Levanyuk, A P [Fisintec Innovacion Tecnologica, Miraflores 65, Alcobendas, Madrid 28100 (Spain)

    2007-01-10

    When discussing the resistance of an atomic-or nanometre-size contact we should consider both its ballistic and its diffusive contributions. But there is a contribution of the leads to the resistance of the contact as well. In this context, the geometry and the roughness of the surfaces limiting the system will contribute to the resistance, and these contributions should be added to the ideal ballistic resistance of the nanocontact. We have calculated, for metallic materials, the serial resistance of the leads arising from the roughness, and our calculations show that the ohmic resistance is as important as the ballistic resistance of the constriction. The classical resistance is a lower limit to the quantum resistance of the leads. Many examples of earlier experiments show that the mean free path of the transport electrons is of the order of the size of the contacts or the leads. This is not compatible with the idea of ballistic transport. This result may put in serious difficulties the current, existing interpretation of experimental data in metals where only small serial resistances compared with the ballistic component of the total resistance have been taken into account. The two-dimensional electron gas (2DEG) is also discussed and the serial corrections appear to be smaller than for metals. Experiments with these last systems are proposed that may reveal new interesting aspects in the physics of ballistic and diffusive transport.

  6. Highly Luminescent 2D-Type Slab Crystals Based on a Molecular Charge-Transfer Complex as Promising Organic Light-Emitting Transistor Materials.

    Science.gov (United States)

    Park, Sang Kyu; Kim, Jin Hong; Ohto, Tatsuhiko; Yamada, Ryo; Jones, Andrew O F; Whang, Dong Ryeol; Cho, Illhun; Oh, Sangyoon; Hong, Seung Hwa; Kwon, Ji Eon; Kim, Jong H; Olivier, Yoann; Fischer, Roland; Resel, Roland; Gierschner, Johannes; Tada, Hirokazu; Park, Soo Young

    2017-09-01

    A new 2:1 donor (D):acceptor (A) mixed-stacked charge-transfer (CT) cocrystal comprising isometrically structured dicyanodistyrylbenzene-based D and A molecules is designed and synthesized. Uniform 2D-type morphology is manifested by the exquisite interplay of intermolecular interactions. In addition to its appealing structural features, unique optoelectronic properties are unveiled. Exceptionally high photoluminescence quantum yield (Φ F ≈ 60%) is realized by non-negligible oscillator strength of the S 1 transition, and rigidified 2D-type structure. Moreover, this luminescent 2D-type CT crystal exhibits balanced ambipolar transport (µ h and µ e of ≈10 -4 cm 2 V -1 s -1 ). As a consequence of such unique optoelectronic characteristics, the first CT electroluminescence is demonstrated in a single active-layered organic light-emitting transistor (OLET) device. The external quantum efficiency of this OLET is as high as 1.5% to suggest a promising potential of luminescent mixed-stacked CT cocrystals in OLET applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Spin-torque transistor

    NARCIS (Netherlands)

    Bauer, G.E.W.; Brataas, A.; Tserkovnyak, Y.; Van Wees, B.J.

    2003-01-01

    A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure–drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin

  8. Metalorganic molecular beam epitaxy of InP on GaAs-substrates for the production of metamorphic high-frequency transistors; Metallorganische Molekularstrahlepitaxie von InP auf GaAS-Substraten fuer die Herstellung metamorpher Hochfrequenztransistoren

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, R.

    2001-12-01

    The present contribution is concerned with the highly lattice-mismatched growth of InP on GaAs-substrates by metalorganic molecular beam epitaxy (MOMBE) using TMIn and precracked phosphine as the source materials. Here the objective was to deposit device-suitable InP-layers with low surface roughness, dislocation density and electrical conductivity. Growth-optimization of InP on GaAs was carried out by applying a multitude of characterization methods, amongst others atomic force microscopy, X-ray diffraction, photoluminescence spectroscopy and Hall-effect-measurements. In particular, for the first time the dependence of the surface morphology on the growth parameters was investigated systematically. A growth model was formulated in order to explain the corresponding observations. Furthermore, the influence of both the growth parameters and a post-growth anneal on the optical and structural properties of the deposited InP-layers was investigated. Finally AlInAs/GaInAs-HEMT-structures (High Electron Mobility Transistors) were deposited and processed for the first time on the InP buffer-layers optimized as described above, which demonstrated the device-suitability of the deposited InP/GaAs-heterostructures. All in all a contribution was achieved in solving the main problem for the implementation of InP-based devices on GaAs-substrates. The predestination of the growth-method MOMBE for highly lattice-mismatched systems was also demonstrated. (orig.)

  9. High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices

    Science.gov (United States)

    Chiu, Yu Sheng; Liao, Jen Ting; Lin, Yueh Chin; Chien Liu, Shin; Lin, Tai Ming; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-05-01

    High-κ cerium oxide (CeO2) was applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a gate insulator and a passivation layer by molecular beam deposition (MBD) for high-power applications. From capacitance-voltage (C-V) measurement results, the dielectric constant of the CeO2 film was 25.2. The C-V curves showed clear accumulation and depletion behaviors with a small hysteresis (20 mV). Moreover, the interface trap density (D it) was calculated to be 5.5 × 1011 eV-1 cm-2 at 150 °C. A CeO2 MOS-HEMT was fabricated and demonstrated a low subthreshold swing (SS) of 87 mV/decade, a high ON/OFF drain current ratio (I ON/I OFF) of 1.14 × 109, and a low gate leakage current density (J leakage) of 2.85 × 10-9 A cm-2 with an improved dynamic ON-resistance (R ON), which is about one order of magnitude lower than that of a conventional HEMT.

  10. Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Webb, James B.; Tang, H.; Bardwell, J. A.; Coleridge, P.

    2001-01-01

    Ammonia molecular-beam epitaxy has been used to grow high-quality epilayers of GaN and AlGaN/GaN heterostructure field-effect transistor (HFET) structures on insulating 4H-SiC. The growth process, which used a magnetron sputter epitaxy deposited buffer layer of AlN, has been described previously. Ex situ pretreatment of the SiC substrate was found to be unnecessary. For a single 2.0 μm thick silicon doped epilayer, a room temperature (RT) electron mobility of 500 cm2/Vs was measured at a carrier density of 6.6x10 16 cm -3 . For the HFET structure, a room temperature mobility of 1300 cm2/Vs at a sheet carrier density of 3.3x10 12 cm -2 was observed, increasing to 11000 cm2/Vs at 77 K. The surface morphology of the layers indicated a coalesced mesa structure similar to what we observed for growth on sapphire, but with a lower overall defect density and correspondingly larger grain size. The observation of well-resolved Shubnikov de Haas oscillations at fields as low as 3 T indicated a relatively smooth interface. [copyright] 2001 American Institute of Physics

  11. The Anti-Ballistic Missile Treaty

    International Nuclear Information System (INIS)

    Platt, A.

    1991-01-01

    This paper reports that in late May 1972 former President Richard M. Nixon went to Moscow and signed, among other documents, a Treaty to Limit Anti-Ballistic Missile (ABM) Systems. Under this agreement, both the United States and the Soviet Union made a commitment not to build nationwide ABM defenses against the other's intercontinental and submarine-launched ballistic missiles. They agreed to limit ABM deployments to a maximum of two sites, with no more than 100 launchers per site. Thirteen of the treaty's sixteen articles are intended to prevent any deviation from this. In addition, a joint Standing Consultative Commission to monitor compliance was created. National technical means --- sophisticated monitoring devices on land, sea, and in space --- were to be the primary instruments used to monitor compliance with the treaty. The ABM Treaty was signed in conjunction with an Interim Agreement to Limit Strategic Offensive Arms

  12. Ballistic model to estimate microsprinkler droplet distribution

    Directory of Open Access Journals (Sweden)

    Conceição Marco Antônio Fonseca

    2003-01-01

    Full Text Available Experimental determination of microsprinkler droplets is difficult and time-consuming. This determination, however, could be achieved using ballistic models. The present study aimed to compare simulated and measured values of microsprinkler droplet diameters. Experimental measurements were made using the flour method, and simulations using a ballistic model adopted by the SIRIAS computational software. Drop diameters quantified in the experiment varied between 0.30 mm and 1.30 mm, while the simulated between 0.28 mm and 1.06 mm. The greatest differences between simulated and measured values were registered at the highest radial distance from the emitter. The model presented a performance classified as excellent for simulating microsprinkler drop distribution.

  13. Orbital magnetism in ensembles of ballistic billiards

    International Nuclear Information System (INIS)

    Ullmo, D.; Richter, K.; Jalabert, R.A.

    1993-01-01

    The magnetic response of ensembles of small two-dimensional structures at finite temperatures is calculated. Using semiclassical methods and numerical calculation it is demonstrated that only short classical trajectories are relevant. The magnetic susceptibility is enhanced in regular systems, where these trajectories appear in families. For ensembles of squares large paramagnetic susceptibility is obtained, in good agreement with recent measurements in the ballistic regime. (authors). 20 refs., 2 figs

  14. Lightweight Multifunctional Linear Cellular Alloy Ballistic Structures

    Science.gov (United States)

    2006-04-26

    densities of 10, 15 and 20 % with the dimensions shown in Table 1. The alloy compositions were high strength maraging steel (M200) and Super Invar ... alloys made from LCA processing3 are shown in Table 3. Super Invar in the as-reduced state is a ductile (25-30%) austenitic alloy . When cooled to...Final Report for Lightweight Multifunctional Linear Cellular Alloy Ballistic Structures from Structured Alloys , Inc. Joe K

  15. Modeling internal ballistics of gas combustion guns.

    Science.gov (United States)

    Schorge, Volker; Grossjohann, Rico; Schönekess, Holger C; Herbst, Jörg; Bockholdt, Britta; Ekkernkamp, Axel; Frank, Matthias

    2016-05-01

    Potato guns are popular homemade guns which work on the principle of gas combustion. They are usually constructed for recreational rather than criminal purposes. Yet some serious injuries and fatalities due to these guns are reported. As information on the internal ballistics of homemade gas combustion-powered guns is scarce, it is the aim of this work to provide an experimental model of the internal ballistics of these devices and to investigate their basic physical parameters. A gas combustion gun was constructed with a steel tube as the main component. Gas/air mixtures of acetylene, hydrogen, and ethylene were used as propellants for discharging a 46-mm caliber test projectile. Gas pressure in the combustion chamber was captured with a piezoelectric pressure sensor. Projectile velocity was measured with a ballistic speed measurement system. The maximum gas pressure, the maximum rate of pressure rise, the time parameters of the pressure curve, and the velocity and path of the projectile through the barrel as a function of time were determined according to the pressure-time curve. The maximum gas pressure was measured to be between 1.4 bar (ethylene) and 4.5 bar (acetylene). The highest maximum rate of pressure rise was determined for hydrogen at (dp/dt)max = 607 bar/s. The muzzle energy was calculated to be between 67 J (ethylene) and 204 J (acetylene). To conclude, this work provides basic information on the internal ballistics of homemade gas combustion guns. The risk of injury to the operator or bystanders is high, because accidental explosions of the gun due to the high-pressure rise during combustion of the gas/air mixture may occur.

  16. Buildings vs. ballistics: Quantifying the vulnerability of buildings to volcanic ballistic impacts using field studies and pneumatic cannon experiments

    Science.gov (United States)

    Williams, G. T.; Kennedy, B. M.; Wilson, T. M.; Fitzgerald, R. H.; Tsunematsu, K.; Teissier, A.

    2017-09-01

    Recent casualties in volcanic eruptions due to trauma from blocks and bombs necessitate more rigorous, ballistic specific risk assessment. Quantitative assessments are limited by a lack of experimental and field data on the vulnerability of buildings to ballistic hazards. An improved, quantitative understanding of building vulnerability to ballistic impacts is required for informing appropriate life safety actions and other risk reduction strategies. We assessed ballistic impacts to buildings from eruptions at Usu Volcano and Mt. Ontake in Japan and compiled available impact data from eruptions elsewhere to identify common damage patterns from ballistic impacts to buildings. We additionally completed a series of cannon experiments which simulate ballistic block impacts to building claddings to investigate their performance over a range of ballistic projectile velocities, masses and energies. Our experiments provide new insights by quantifying (1) the hazard associated with post-impact shrapnel from building and rock fragments; (2) the effect of impact obliquity on damage; and (3) the additional impact resistance buildings possess when claddings are struck in areas directly supported by framing components. This was not well identified in previous work which may have underestimated building vulnerability to ballistic hazards. To improve assessment of building vulnerability to ballistics, we use our experimental and field data to develop quantitative vulnerability models known as fragility functions. Our fragility functions and field studies show that although unreinforced buildings are highly vulnerable to large ballistics (> 20 cm diameter), they can still provide shelter, preventing death during eruptions.

  17. Targeting Low-Energy Ballistic Lunar Transfers

    Science.gov (United States)

    Parker, Jeffrey S.

    2010-01-01

    Numerous low-energy ballistic transfers exist between the Earth and Moon that require less fuel than conventional transfers, but require three or more months of transfer time. An entirely ballistic lunar transfer departs the Earth from a particular declination at some time in order to arrive at the Moon at a given time along a desirable approach. Maneuvers may be added to the trajectory in order to adjust the Earth departure to meet mission requirements. In this paper, we characterize the (Delta)V cost required to adjust a low-energy ballistic lunar transfer such that a spacecraft may depart the Earth at a desirable declination, e.g., 28.5(white bullet), on a designated date. This study identifies the optimal locations to place one or two maneuvers along a transfer to minimize the (Delta)V cost of the transfer. One practical application of this study is to characterize the launch period for a mission that aims to launch from a particular launch site, such as Cape Canaveral, Florida, and arrive at a particular orbit at the Moon on a given date using a three-month low-energy transfer.

  18. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    Science.gov (United States)

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  19. Organic electrochemical transistors

    KAUST Repository

    Rivnay, Jonathan

    2018-01-16

    Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume of the channel endows OECTs with high transconductance compared with that of field-effect transistors, but also limits their response time. The synthetic tunability, facile deposition and biocompatibility of organic materials make OECTs particularly suitable for applications in biological interfacing, printed logic circuitry and neuromorphic devices. In this Review, we discuss the physics and the mechanism of operation of OECTs, focusing on their identifying characteristics. We highlight organic materials that are currently being used in OECTs and survey the history of OECT technology. In addition, form factors, fabrication technologies and applications such as bioelectronics, circuits and memory devices are examined. Finally, we take a critical look at the future of OECT research and development.

  20. Mesoscopic photon heat transistor

    DEFF Research Database (Denmark)

    Ojanen, T.; Jauho, Antti-Pekka

    2008-01-01

    We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir-Wingreen-Landauer-typ......We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir......-Wingreen-Landauer-type of conductance formula, which gives the photonic heat current through an arbitrary circuit element coupled to two dissipative reservoirs at finite temperatures. As an illustration we present an exact solution for the case when the intermediate circuit can be described as an electromagnetic resonator. We discuss...

  1. Junctionless Cooper pair transistor

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunov, K. Yu., E-mail: konstantin.yu.arutyunov@jyu.fi [National Research University Higher School of Economics , Moscow Institute of Electronics and Mathematics, 101000 Moscow (Russian Federation); P.L. Kapitza Institute for Physical Problems RAS , Moscow 119334 (Russian Federation); Lehtinen, J.S. [VTT Technical Research Centre of Finland Ltd., Centre for Metrology MIKES, P.O. Box 1000, FI-02044 VTT (Finland)

    2017-02-15

    Highlights: • Junctionless Cooper pair box. • Quantum phase slips. • Coulomb blockade and gate modulation of the Coulomb gap. - Abstract: Quantum phase slip (QPS) is the topological singularity of the complex order parameter of a quasi-one-dimensional superconductor: momentary zeroing of the modulus and simultaneous 'slip' of the phase by ±2π. The QPS event(s) are the dynamic equivalent of tunneling through a conventional Josephson junction containing static in space and time weak link(s). Here we demonstrate the operation of a superconducting single electron transistor (Cooper pair transistor) without any tunnel junctions. Instead a pair of thin superconducting titanium wires in QPS regime was used. The current–voltage characteristics demonstrate the clear Coulomb blockade with magnitude of the Coulomb gap modulated by the gate potential. The Coulomb blockade disappears above the critical temperature, and at low temperatures can be suppressed by strong magnetic field.

  2. Metatronic transistor amplifier

    Science.gov (United States)

    Chettiar, Uday K.; Engheta, Nader

    2015-10-01

    Utilizing the notion of metamaterials, in recent years the concept of a circuit and lumped circuit elements have been extended to the optical domains, providing the paradigm of optical metatronics, i.e., metamaterial-inspired optical nanocircuitry, as a powerful tool for design and study of more complex systems at the nanoscale. In this paper we present a design for a new metatronic element, namely, a metatronic transistor that functions as an amplifier. As shown by our analytical and numerical paper here, this metatronic transistor provides gain as well as isolation between the input and output ports of such two-port device. The cascadability and fan-out aspects of this element are also explored.

  3. Organic electrochemical transistors

    Science.gov (United States)

    Rivnay, Jonathan; Inal, Sahika; Salleo, Alberto; Owens, Róisín M.; Berggren, Magnus; Malliaras, George G.

    2018-02-01

    Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume of the channel endows OECTs with high transconductance compared with that of field-effect transistors, but also limits their response time. The synthetic tunability, facile deposition and biocompatibility of organic materials make OECTs particularly suitable for applications in biological interfacing, printed logic circuitry and neuromorphic devices. In this Review, we discuss the physics and the mechanism of operation of OECTs, focusing on their identifying characteristics. We highlight organic materials that are currently being used in OECTs and survey the history of OECT technology. In addition, form factors, fabrication technologies and applications such as bioelectronics, circuits and memory devices are examined. Finally, we take a critical look at the future of OECT research and development.

  4. Ion bipolar junction transistors.

    Science.gov (United States)

    Tybrandt, Klas; Larsson, Karin C; Richter-Dahlfors, Agneta; Berggren, Magnus

    2010-06-01

    Dynamic control of chemical microenvironments is essential for continued development in numerous fields of life sciences. Such control could be achieved with active chemical circuits for delivery of ions and biomolecules. As the basis for such circuitry, we report a solid-state ion bipolar junction transistor (IBJT) based on conducting polymers and thin films of anion- and cation-selective membranes. The IBJT is the ionic analogue to the conventional semiconductor BJT and is manufactured using standard microfabrication techniques. Transistor characteristics along with a model describing the principle of operation, in which an anionic base current amplifies a cationic collector current, are presented. By employing the IBJT as a bioelectronic circuit element for delivery of the neurotransmitter acetylcholine, its efficacy in modulating neuronal cell signaling is demonstrated.

  5. Learning without knowing: subliminal visual feedback facilitates ballistic motor learning

    DEFF Research Database (Denmark)

    Lundbye-Jensen, Jesper; Leukel, Christian; Nielsen, Jens Bo

    received supraliminal as compared to subliminal feedback. In the 0 ms feedback group motor performance increased only slightly indicating an important role of augmented feedback in learning the ballistic task. In the two groups who received subliminal feedback none of the subjects were able to tell what...... by the learner, indeed facilitated ballistic motor learning. This effect likely relates to multiple (conscious versus unconscious) processing of visual feedback and to the specific neural circuitries involved in optimization of ballistic motor performance....

  6. Polarization induced doped transistor

    Science.gov (United States)

    Xing, Huili; Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang

    2016-06-07

    A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

  7. High-Performance Solution-Deposited Ambipolar Organic Transistors Based on Terrylene Diimides

    DEFF Research Database (Denmark)

    Liu, Chuan; Liu, Zhihong; Lemke, Henrik T.

    2010-01-01

    The thin film transistor characteristics of a soluble molecular semiconductor, terrylene tetracarboxdiimide (TDI), a homologue of perylene tetracarboxdiimide (PDI), have been investigated. In a bottom-gate device structure with benzocyclobutene gate dielectric, n-type behavior with electron mobil...

  8. Single-molecule probes in organic field-effect transistors

    NARCIS (Netherlands)

    Nicolet, Aurélien Armel Louis

    2007-01-01

    The goal of this thesis is to study charge transport phenomena in organic materials. This is done optically by means of single-molecule spectroscopy in a field-effect transistor based on a molecular crystal. We present (in Chapter 2) a fundamental requirement for single-molecule spectroscopy

  9. Contemporary management of maxillofacial ballistic trauma.

    Science.gov (United States)

    Breeze, J; Tong, D; Gibbons, A

    2017-09-01

    Ballistic maxillofacial trauma in the UK is fortunately relatively rare, and generally involves low velocity handguns and shotguns. Civilian terrorist events have, however, shown that all maxillofacial surgeons need to understand how to treat injuries from improvised explosive devices. Maxillofacial surgeons in the UK have also been responsible for the management of soldiers evacuated from Iraq and Afghanistan, and in this review we describe the newer types of treatment that have evolved from these conflicts, particularly that of damage-control maxillofacial surgery. Crown Copyright © 2017. Published by Elsevier Ltd. All rights reserved.

  10. Development and testing of a flexible ballistic neck protection

    NARCIS (Netherlands)

    Roebroeks, G.H.J.J.; Rensink, P.

    2016-01-01

    Sufficient ballistic protection of the neck area would significantly reduce the vulnerability of an infantry soldier. So far this protection is offered by extensions on the ballistic vest or combat helmet. However, the requirements for head agility and the various body to head positions combined

  11. A ballistic mission to fly by Comet Halley

    Science.gov (United States)

    Boain, R. J.; Hastrup, R. C.

    1980-01-01

    The paper describes the available options, ballistic trajectory opportunities, and a preliminary reference trajectory that were selected as a basis for spacecraft design studies and programmatic planning for a Halley ballistic intercept mission in 1986. The paper also presents trajectory, performance, and navigation data which support the preliminary selection.

  12. Experiments with Liquid Propellant Jet Ignition in a Ballistic Compressor

    National Research Council Canada - National Science Library

    Birk, Avi

    1998-01-01

    .... The apparatus consists of an inline ballistic compressor and LP injector. The rebound of the ballistic compressor piston was arrested, trapping 40 to 55 MPa of 750 to 8500 C argon for ignition of circular jets in a windowed test chamber...

  13. 76 FR 70165 - Ballistic-Resistant Body Armor Standard Workshop

    Science.gov (United States)

    2011-11-10

    ... of Justice Programs Ballistic-Resistant Body Armor Standard Workshop AGENCY: National Institute of..., Ballistic Resistance of Body Armor, and the discussion is directed toward manufacturers, certification... armor community will be summarized as part of the workshop notes. Contributors of comments will not be...

  14. Towards reliable simulations of ballistic impact on concrete structures

    NARCIS (Netherlands)

    Khoe, Y.S.; Tyler Street, M.D.; Maravalalu Suresh,, R.S.; Weerheijm, J.

    2013-01-01

    Protection against weapon effects like ballistic impacts, fragmenting shells and explosions is the core business of the Explosions, Ballistics and Protection department of TNO (The Netherlands). Experimental and numerical research is performed to gain and maintain the knowledge to support the Dutch

  15. An integrated approach towards future ballistic neck protection materials selection.

    Science.gov (United States)

    Breeze, John; Helliker, Mark; Carr, Debra J

    2013-05-01

    Ballistic protection for the neck has historically taken the form of collars attached to the ballistic vest (removable or fixed), but other approaches, including the development of prototypes incorporating ballistic material into the collar of an under body armour shirt, are now being investigated. Current neck collars incorporate the same ballistic protective fabrics as the soft armour of the remaining vest, reflecting how ballistic protective performance alone has historically been perceived as the most important property for neck protection. However, the neck has fundamental differences from the thorax in terms of anatomical vulnerability, flexibility and equipment integration, necessitating a separate solution from the thorax in terms of optimal materials selection. An integrated approach towards the selection of the most appropriate combination of materials to be used for each of the two potential designs of future neck protection has been developed. This approach requires evaluation of the properties of each potential material in addition to ballistic performance alone, including flexibility, mass, wear resistance and thermal burden. The aim of this article is to provide readers with an overview of this integrated approach towards ballistic materials selection and an update of its current progress in the development of future ballistic neck protection.

  16. ballistic performance of a quenched and tempered steel against

    African Journals Online (AJOL)

    eobe

    conditions. Hardness is an important feature for the materials used for armour strategy [1-3]. Sangoy and others.[5]reported that high hardness of given armour steel directly determines the ballistic performance and perforation mode. Many studies on the ballistic impact behaviour of the steels revealed that relationship exists ...

  17. Aerodynamic heating of ballistic missile including the effects of gravity

    Indian Academy of Sciences (India)

    http://www.ias.ac.in/article/fulltext/sadh/025/05/0463-0473. Keywords. Aerodynamic heating; ballistic missile; gravity; flat-earth. Abstract. The aerodynamic heating of a ballistic missile due to only convection is analysed taking into consideration the effects of gravity. The amount of heat transferred to the wetted area and to the ...

  18. Ballistic performance and microstructure of four armor ceramics

    NARCIS (Netherlands)

    Abadjieva, E.; Carton, E.P.

    2013-01-01

    The ballistic behavior of four different armor ceramic materials with thicknesses varying from 3 mm to 14 mm has been investigated. These are two types of alumina Al2O3 armor grades and two types of SiC armor grades produced by different armor ceramic producers. The ballistic study has been

  19. Spin Hall effect transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, Joerg; Park, B.G.; Irvine, A.C.; Zarbo, Liviu; Rozkotová, E.; Němec, P.; Novák, Vít; Sinova, Jairo; Jungwirth, Tomáš

    2010-01-01

    Roč. 330, č. 6012 (2010), s. 1801-1804 ISSN 0036-8075 R&D Projects: GA AV ČR KAN400100652; GA MŠk LC510 EU Projects: European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : spin Hall effect * spintronics * spin transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 31.364, year: 2010

  20. Impacts of Deflection Nose on Ballistic Trajectory Control Law

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2014-01-01

    Full Text Available The deflection of projectile nose is aimed at changing the motion of the projectile in flight with the theory of motion control and changing the exterior ballistics so as to change its range and increase its accuracy. The law of external ballistics with the deflectable nose is considered as the basis of the design of a flight control system and an important part in the process of projectile development. Based on the existing rigid external ballistic model, this paper establishes an external ballistic calculation model for deflectable nose projectile and further establishes the solving programs accordingly. Different angle of attack, velocity, coefficients of lift, resistance, and moment under the deflection can be obtained in this paper based on the previous experiments and emulation researches. In the end, the author pointed out the laws on the impaction of external ballistic trajectory by the deflection of nose of the missile.

  1. Polypeptides Based Molecular Electronics

    National Research Council Canada - National Science Library

    Lam, Yeng M; Mhaisalkar, Subodh; Li, Lain-Jong; Dravid, Vinayak P; Shekhawat, Gajendra S; Suri, Raman

    2008-01-01

    ... the formation of molecular devices such as transistors, diodes, and sensors. We have designed the peptides, arranged them on substrates using self-assembly, Dip-PEN nanolithography, and also e-beam assisted lithography...

  2. Field mapping of ballistic pressure pulse sources

    Directory of Open Access Journals (Sweden)

    Rad Abtin Jamshidi

    2015-09-01

    Full Text Available Ballistic pressure pulse sources are used since late 1990s for the extracorporeal treatment of chronic Enthesitis. Newly indications are found in trigger-point-therapy for the treatment of musculoskeletal disorders. In both applications excellent results without relevant side effects were found in clinical trials. The technical principle of pressure pulse source is based on the same techniques used in air guns. A projectile is accelerated by pressurized air and hits the applicator with high kinetic energy. By this a compression wave travels through the material and induces a fast (4..5μs, almost singular pressure pulse of 2..10 MPa, which is followed by an equally short rarefaction phase of about the same amplitude. It is assumed that the pressure pulse accounts for the biomedical effects of the device. The slower inertial motion of the waveguide is damped by elastic stoppers, but still can be measured several micro seconds after the initial pressure pulse. In order to characterize the pressure pulse devices, field mapping is performed on several radial pressure pulse sources using the fiber optic hydrophone and a polyvinylidenfluorid (PVDF piezoelectric hydrophone. It could be shown that the current standard (IEC 61846 is not appropriate for characterization of ballistic pressure pulse sources.

  3. Ballistic Limit Equation for Single Wall Titanium

    Science.gov (United States)

    Ratliff, J. M.; Christiansen, Eric L.; Bryant, C.

    2009-01-01

    Hypervelocity impact tests and hydrocode simulations were used to determine the ballistic limit equation (BLE) for perforation of a titanium wall, as a function of wall thickness. Two titanium alloys were considered, and separate BLEs were derived for each. Tested wall thicknesses ranged from 0.5mm to 2.0mm. The single-wall damage equation of Cour-Palais [ref. 1] was used to analyze the Ti wall's shielding effectiveness. It was concluded that the Cour-Palais single-wall equation produced a non-conservative prediction of the ballistic limit for the Ti shield. The inaccurate prediction was not a particularly surprising result; the Cour-Palais single-wall BLE contains shield material properties as parameters, but it was formulated only from tests of different aluminum alloys. Single-wall Ti shield tests were run (thicknesses of 2.0 mm, 1.5 mm, 1.0 mm, and 0.5 mm) on Ti 15-3-3-3 material custom cut from rod stock. Hypervelocity impact (HVI) tests were used to establish the failure threshold empirically, using the additional constraint that the damage scales with impact energy, as was indicated by hydrocode simulations. The criterion for shield failure was defined as no detached spall from the shield back surface during HVI. Based on the test results, which confirmed an approximately energy-dependent shield effectiveness, the Cour-Palais equation was modified.

  4. Advanced geometries for ballistic neutron guides

    International Nuclear Information System (INIS)

    Schanzer, Christian; Boeni, Peter; Filges, Uwe; Hils, Thomas

    2004-01-01

    Sophisticated neutron guide systems take advantage of supermirrors being used to increase the neutron flux. However, the finite reflectivity of supermirrors becomes a major loss mechanism when many reflections occur, e.g. in long neutron guides and for long wavelengths. In order to reduce the number of reflections, ballistic neutron guides have been proposed. Usually linear tapered sections are used to enlarge the cross-section and finally, focus the beam to the sample. The disadvantages of linear tapering are (i) an inhomogeneous phase space at the sample position and (ii) a decreasing flux with increasing distance from the exit of the guide. We investigate the properties of parabolic and elliptic tapering for ballistic neutron guides, using the Monte Carlo program McStas with a new guide component dedicated for such geometries. We show that the maximum flux can indeed be shifted away from the exit of the guide. In addition we explore the possibilities of parabolic and elliptic geometries to create point like sources for dedicated experimental demands

  5. Ballistic resistant article, semi-finished product for and method of making a shell for a ballistic resistant article

    NARCIS (Netherlands)

    Harings, Jules; Janse, Gerardus

    2013-01-01

    The invention relates to a ballistic resistant article, such as a helmet (1), comprising a double curved shell (2) in turn comprising a stack (5) of layers (6) of an oriented anti-ballistic material, the layers (6) comprising one or more plies and having a plurality of cuts (7), the ends of which

  6. Monolithic metal oxide transistors.

    Science.gov (United States)

    Choi, Yongsuk; Park, Won-Yeong; Kang, Moon Sung; Yi, Gi-Ra; Lee, Jun-Young; Kim, Yong-Hoon; Cho, Jeong Ho

    2015-04-28

    We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics.

  7. Copper atomic-scale transistors

    Directory of Open Access Journals (Sweden)

    Fangqing Xie

    2017-03-01

    Full Text Available We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO4 + H2SO4 in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate. The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes (Ubias influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1G0 (G0 = 2e2/h; with e being the electron charge, and h being Planck’s constant or 2G0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.

  8. Programmable automated transistor test system

    International Nuclear Information System (INIS)

    Truong, L.V.; Sundberg, G.R.

    1986-01-01

    The paper describes a programmable automated transistor test system (PATTS) and its utilization to evaluate bipolar transistors and Darlingtons, and such MOSFET and special types as can be accommodated with the PATTS base-drive. An application of a pulsed power technique at low duty cycles in a non-destructive test is used to examine the dynamic switching characteristic curves of power transistors. Data collection, manipulation, storage, and output are operator interactive but are guided and controlled by the system software. In addition a library of test data is established on disks, tapes, and hard copies for future reference

  9. Ballistic and Diffusive Thermal Conductivity of Graphene

    Science.gov (United States)

    Saito, Riichiro; Masashi, Mizuno; Dresselhaus, Mildred S.

    2018-02-01

    This paper is a contribution to the Physical Review Applied collection in memory of Mildred S. Dresselhaus. Phonon-related thermal conductivity of graphene is calculated as a function of the temperature and sample size of graphene in which the crossover of ballistic and diffusive thermal conductivity occurs at around 100 K. The diffusive thermal conductivity of graphene is evaluated by calculating the phonon mean free path for each phonon mode in which the anharmonicity of a phonon and the phonon scattering by a 13C isotope are taken into account. We show that phonon-phonon scattering of out-of-plane acoustic phonon by the anharmonic potential is essential for the largest thermal conductivity. Using the calculated results, we can design the optimum sample size, which gives the largest thermal conductivity at a given temperature for applying thermal conducting devices.

  10. Ballistic thermoelectric transport in a Luttinger liquid

    International Nuclear Information System (INIS)

    Ivanov, Y V

    2010-01-01

    The Seebeck and Peltier coefficients of a homogeneous Luttinger liquid are calculated in the ballistic regime. Nonlinearity of the electron spectrum is taken into account. It is shown that, in the framework of the defined approximations, the thermoelectric power of a Luttinger liquid is equal to zero, in agreement with the exponentially small thermopower of a one-dimensional degenerate Fermi gas. The Peltier coefficient is controlled by a nonequilibrium state of the system. It is finite and renormalized by the interaction in the case of a convective flow of a Luttinger liquid. The zero modes of bosonic excitations and the dispersion-induced contribution to the electric current operator are taken into account in calculations.

  11. Ballistic transport in gold [110] nanowire

    Science.gov (United States)

    Kurui, Yoshihiko; Oshima, Yoshifumi; Okamoto, Masakuni; Takayanagi, Kunio

    2009-03-01

    Conductance of gold nanowire elongated along the [110] direction (gold [110] nanowire) was measured during many breaking procedures, while simultaneously acquiring transmission electron microscope images. The conductance histogram exhibits a series of peaks whose conductance values increased nearly in steps of the conductance quantum, G0 =2e^2/h. However thick nanowires above 10G0 showed dequantization, where the increment was only 0.9G0. The structure for each peak was determined to be either an atomic sheet or a hexagonal prism. The number of conductance channels calculated for each atomic structure by first principles theory, coincided well with the peak index in the conductance histogram. The present study shows that the [110] nanowire behave as ballistic conductors, and a conductance peak appears whenever a conductance channel is opened.

  12. Ballistic Missile Defense: New Plans, Old Challenges

    Directory of Open Access Journals (Sweden)

    Elizabeth Zolotukhina

    2010-01-01

    Full Text Available On September 17, 2009—the 70th anniversary of the Soviet invasion of Poland in 1939 that marked the beginning of World War II—the Obama Administration announced its intention to shelve plans for the U.S. Ballistic Missile Defense (BMD that had been developed under former President George W. Bush. Pointing to a new intelligence assessment, President Obama argued that his predecessor's plan to deploy an X-band radar station outside of Prague, Czech Republic, and 10 two-stage interceptor missiles in Poland would not adequately protect America and its European allies from the Iranian threat and reiterated his opposition to utilizing unproven technology in any European BMD architecture.

  13. Ballistic energy transport in PEG oligomers

    Directory of Open Access Journals (Sweden)

    Kireev Victor V.

    2013-03-01

    Full Text Available Energy transport between the terminal groups of the azido-PEG-succinimide ester compounds with a number of repeating PEG units of 0, 4, 8, and 12 was studied using relaxation-assisted two-dimensional infrared spectroscopy. The through-bond energy transport time, evaluated as the waiting time at which the cross peak maximum is reached, Tmax, was found to be linearly dependent on the chain length for chain lengths up to 60 Å suggesting a ballistic energy transport regime. The through-bond energy transport speed is found to be ca. 500 m/s. The cross-peak amplitude at the maximum decays exponentially with the chain length with a characteristic decay distance of 15.7 ± 1 Å. Substantial mode delocalization across the PEG bridge is found, which can support the energy propagation as a wavepacket.

  14. Statistics of magnetoconductance in ballistic cavities

    International Nuclear Information System (INIS)

    Yang, X.; Ishio, H.; Burgdoerfer, J.

    1995-01-01

    The statistical properties of magnetoconductance in ballistic microcavities are investigated numerically. The distribution of conductance for chaotic cavities is found to follow the renormalized Porter-Thomas distribution suggested by random-matrix theory for the Gaussian ensemble while the conductance distribution of regular cavities in magnetic fields is nonuniversal and shifted towards the maximum value for a given number of open channels. The renormalized Porter-Thomas distribution implies a universal dependence of fluctuation amplitude on the mean conductance for chaotic cavities in the absence of time-reversal symmetry. The fluctuation amplitude for regular cavities is found to be larger than the saturation value of the fluctuation amplitude of chaotic cavities predicted by random-matrix theory. The change of the mean conductance as a function of the external magnetic field is consistent with semiclassical predictions

  15. 19 mm ballistic range: a potpourri of techniques and recipes

    International Nuclear Information System (INIS)

    Carpluk, G.T.

    1975-01-01

    The expansion of ballistic gun range facilities at LLL has introduced state-of-the-art diagnostic techniques to glovebox-enclosed ballistic guns systems. These enclosed ballistic ranges are designed for the study of one-dimensional shock phenomena in extremely toxic material such as plutonium. The extension of state-of-the-art phtographic and interferometric diagnostic systems to glovebox-enclosed gun systems introduces new design boundaries and performance criteria on optical and mechanical components. A technique for experimentally evaluating design proposals is illustrated, and several specific examples (such as, target alignment, collateral shrapnel damage, and soft recovery) are discussed

  16. Ballistic Trauma: Lessons Learned from Iraq and Afghanistan

    Science.gov (United States)

    Shin, Emily H.; Sabino, Jennifer M.; Nanos, George P.; Valerio, Ian L.

    2015-01-01

    Management of upper extremity injuries secondary to ballistic and blast trauma can lead to challenging problems for the reconstructive surgeon. Given the recent conflicts in Iraq and Afghanistan, advancements in combat-casualty care, combined with a high-volume experience in the treatment of ballistic injuries, has led to continued advancements in the treatment of the severely injured upper extremity. There are several lessons learned that are translatable to civilian trauma centers and future conflicts. In this article, the authors provide an overview of the physics of ballistic injuries and principles in the management of such injuries through experience gained from military involvement in Iraq and Afghanistan. PMID:25685099

  17. Synchro-ballistic recording of detonation phenomena

    Energy Technology Data Exchange (ETDEWEB)

    Critchfield, R.R.; Asay, B.W.; Bdzil, J.B.; Davis, W.C.; Ferm, E.N.; Idar, D.J.

    1997-09-01

    Synchro-ballistic use of rotating-mirror streak cameras allows for detailed recording of high-speed events of known velocity and direction. After an introduction to the synchro-ballistic technique, this paper details two diverse applications of the technique as applied in the field of high-explosives research. In the first series of experiments detonation-front shape is recorded as the arriving detonation shock wave tilts an obliquely mounted mirror, causing reflected light to be deflected from the imaging lens. These tests were conducted for the purpose of calibrating and confirming the asymptotic Detonation Shock Dynamics (DSD) theory of Bdzil and Stewart. The phase velocities of the events range from ten to thirty millimeters per microsecond. Optical magnification is set for optimal use of the film`s spatial dimension and the phase velocity is adjusted to provide synchronization at the camera`s maximum writing speed. Initial calibration of the technique is undertaken using a cylindrical HE geometry over a range of charge diameters and of sufficient length-to-diameter ratio to insure a stable detonation wave. The final experiment utilizes an arc-shaped explosive charge, resulting in an asymmetric detonation-front record. The second series of experiments consists of photographing a shaped-charge jet having a velocity range of two to nine millimeters per microsecond. To accommodate the range of velocities it is necessary to fire several tests, each synchronized to a different section of the jet. The experimental apparatus consists of a vacuum chamber to preclude atmospheric ablation of the jet tip with shocked-argon back lighting to produce a shadow-graph image.

  18. Molecular Electronics

    DEFF Research Database (Denmark)

    Jennum, Karsten Stein

    This thesis includes the synthesis and characterisation of organic compounds designed for molecular electronics. The synthesised organic molecules are mainly based on two motifs, the obigo(phenyleneethynylenes) (OPE)s and tetrathiafulvalene (TTF) as shown below. These two scaffolds (OPE and TTF......) are chemically merged together to form cruciform-like structures that are an essential part of the thesis. The cruciform molecules were subjected to molecular conductance measurements to explore their capability towards single-crystal field-effect transistors (Part 1), molecular wires, and single electron...... transistors (Part 2). The synthetic protocols rely on stepwise Sonogashira coupling reactions. Conductivity studies on various OPE-based molecular wires reveal that mere OPE compounds have a higher electrical resistance compared to the cruciform based wires (up to 9 times higher). The most spectacular result...

  19. John Bardeen and transistor physics

    Science.gov (United States)

    Huff, Howard R.

    2001-01-01

    John Bardeen and Walter Brattain invented the point-contact semiconductor amplifier (transistor action) in polycrystalline germanium (also observed in polycrystalline silicon) on Dec. 15, 1947, for which they received a patent on Oct. 3, 1950. Bill Shockley was not a co-patent holder on Bardeen and Brattain's point-contact semiconductor amplifier patent since Julius Lilienfeld had already received a patent in 1930 for what would have been Shockley's contribution; namely, the field-effect methodology. Shockley received patents for both his minority-carrier injection concept and junction transistor theory, however, and deservedly shared the Nobel prize with Bardeen and Brattain for his seminal contributions of injection, p-n junction theory and junction transistor theory. We will review the events leading up to the invention of Bardeen and Brattain's point-contact semiconductor amplifier during the magic month of November 17-December 16, 1947 and the invention of Shockley's junction semiconductor amplifier during his magic month of December 24, 1947-January 23, 1948. It was during the course of Bardeen and Brattain's research in November, 1947 that Bardeen also patented the essence of the MOS transistor, wherein the induced minority carriers were confined to the inversion layer enroute to the collector. C. T. Sah has described this device as a sourceless MOS transistor. Indeed, John Bardeen, co-inventor of the point-contact semiconductor amplifier and inventor of the MOS transistor, may rightly be called the father of modern electronics.

  20. Institute for Non-Lethal Defense Technologies Report: Ballistic Gelatin

    National Research Council Canada - National Science Library

    Nicholas, N. C; Welsch, J. R

    2004-01-01

    Ballistic gelatin is designed to simulate living soft tissue. It is the standard for evaluating the effectiveness of firearms against humans because of its convenience and acceptability over animal or cadaver testing...

  1. Designing an Innovative Composite Armor System for Affordable Ballistic Protection

    National Research Council Canada - National Science Library

    Ma, Zheng-Dong; Wang, Hui; Cui, Yushun; Rose, Douglas; Socks, Adria; Ostberg, Donald

    2006-01-01

    .... This paper focuses on the frontal armor plate and back plate design problems with demonstration examples, including both results of the virtual prototyping and ballistic testing for proof-of-concept...

  2. North Korean Ballistic Missile Threat to the United States

    National Research Council Canada - National Science Library

    Hildreth, Steven A

    2007-01-01

    ... so. The Administration will ask the 110th Congress to fund a National Missile Defense (NMD) site in Europe, which some analysts argue is needed because of the threat of North Korean ballistic missiles to Europe...

  3. The Modeling and Application of Small Arms Wound Ballistics

    Science.gov (United States)

    1991-08-01

    Components." The Journal of Traurma, vol. 25, pp. 522-529, 1985. 3. Clare, V., W. Ashman, P. Broome, J. Jameson, J. Lewis, J. Merkler, A. Mickiewicz , W...Proving Ground, MD, 1962. 28. Olivier, A., J. Merkler, B. Brown, and A. Mickiewicz . ’Wound Ballistics of the 15.2 Grain Steel Flechette." CRDLR 3132...NWerkler, A. Mickiewicz , W. Sacco, L. Sturdivan, D. Lamb, and F. Sylva,)us. "The ARRADCOM Computer Man - An Automated Approach To Wound Ballistics

  4. Understanding the Ballistic Event: Methodology and Initial Observations

    OpenAIRE

    Healey, Adam; Cotton, J; Maclachlan, S; Smith, Paul; Yeomans, Julie

    2016-01-01

    The purpose of the study is to accelerate the development of ceramic materials for armour applications, by substantially increasing the information obtained from a high-energy projectile impact event. This has been achieved by modifying an existing test configuration to incorporate a block of ballistic gel, attached to the strike face of a ceramic armour system, to capture fragments generated during the ballistic event such that their final positions are maintained. Three different materials,...

  5. Ballistic Heat Conduction and Mass Disorder in One Dimension

    OpenAIRE

    Ong, Zhun-Yong; Zhang, Gang

    2014-01-01

    It is well-known that in the disordered harmonic chain, heat conduction is subballistic and the thermal conductivity ($\\kappa$) scales asymptotically as $\\lim_{L\\rightarrow\\infty}\\kappa\\propto L^{0.5}$ where $L$ is the chain length. However, using the nonequilibrium Green's function (NEGF) method and analytical modeling, we show that there exists a critical crossover length scale ($L_{C}$) below which ballistic heat conduction ($\\kappa\\propto L$) can coexist with mass disorder. This ballistic...

  6. Ballistic Impact Simulation of Ceramic/Metal Armor Structures

    OpenAIRE

    ARSLAN, Kemal; GÜNEŞ, Recep

    2017-01-01

    The study presents a comparative numericalinvestigation on ballistic performance of ceramic/metal armor structures. 2Daxisymmetric numerical model was developed for ballistic impact simulationsusing LS-DYNA® finite element software. The armor structuresincluded combinations of boron carbide (B4C), Al6061-T6 and 4340steel constituents. The interfaces in the armor structure were modelled with anepoxy resin adhesive. In order to define proper material behavior,Johnson-Holmquist-Ceramics material...

  7. The application of a calibrated 3D ballistic trajectory model to ballistic hazard assessments at Upper Te Maari, Tongariro

    Science.gov (United States)

    Fitzgerald, R. H.; Tsunematsu, K.; Kennedy, B. M.; Breard, E. C. P.; Lube, G.; Wilson, T. M.; Jolly, A. D.; Pawson, J.; Rosenberg, M. D.; Cronin, S. J.

    2014-10-01

    On 6 August, 2012, Upper Te Maari Crater, Tongariro volcano, New Zealand, erupted for the first time in over one hundred years. Multiple vents were activated during the hydrothermal eruption, ejecting blocks up to 2.3 km and impacting ~ 2.6 km of the Tongariro Alpine Crossing (TAC) hiking track. Ballistic impact craters were mapped to calibrate a 3D ballistic trajectory model for the eruption. This was further used to inform future ballistic hazard. Orthophoto mapping revealed 3587 impact craters with a mean diameter of 2.4 m. However, field mapping of accessible regions indicated an average of at least four times more observable impact craters and a smaller mean crater diameter of 1.2 m. By combining the orthophoto and ground-truthed impact frequency and size distribution data, we estimate that approximately 13,200 ballistic projectiles were generated during the eruption. The 3D ballistic trajectory model and a series of inverse models were used to constrain the eruption directions, angles and velocities. When combined with eruption observations and geophysical observations, the model indicates that the blocks were ejected in five variously directed eruption pulses, in total lasting 19 s. The model successfully reproduced the mapped impact distribution using a mean initial particle velocity of 200 m/s with an accompanying average gas flow velocity over a 400 m radius of 150 m/s. We apply the calibrated model to assess ballistic hazard from the August eruption along the TAC. By taking the field mapped spatial density of impacts and an assumption that an average ballistic impact will cause serious injury or death (casualty) over an 8 m2 area, we estimate that the probability of casualty ranges from 1% to 16% along the affected track (assuming an eruption during the time of exposure). Future ballistic hazard and probabilities of casualty along the TAC are also assessed through application of the calibrated model. We model a magnitude larger eruption and illustrate

  8. Logarithmic current-measuring transistor circuits

    DEFF Research Database (Denmark)

    Højberg, Kristian Søe

    1967-01-01

    Describes two transistorized circuits for the logarithmic measurement of small currents suitable for nuclear reactor instrumentation. The logarithmic element is applied in the feedback path of an amplifier, and only one dual transistor is used as logarithmic diode and temperature compensating...... transistor. A simple one-amplifier circuit is compared with a two-amplifier system. The circuits presented have been developed in connexion with an amplifier using a dual m.o.s. transistor input stage with diode-protected gates....

  9. Allegany Ballistics Lab: sensor test target system

    Science.gov (United States)

    Eaton, Deran S.

    2011-06-01

    Leveraging the Naval Surface Warfare Center, Indian Head Division's historical experience in weapon simulation, Naval Sea Systems Command commissioned development of a remote-controlled, digitally programmable Sensor Test Target as part of a modern, outdoor hardware-in-the-loop test system for ordnance-related guidance, navigation and control systems. The overall Target system design invokes a sciences-based, "design of automated experiments" approach meant to close the logistical distance between sensor engineering and developmental T&E in outdoor conditions over useful real world distances. This enables operating modes that employ broad spectrum electromagnetic energy in many a desired combination, variably generated using a Jet Engine Simulator, a multispectral infrared emitter array, optically enhanced incandescent Flare Simulators, Emitter/Detector mounts, and an RF corner reflector kit. As assembled, the recently tested Sensor Test Target prototype being presented can capably provide a full array of useful RF and infrared target source simulations for RDT&E use with developmental and existing sensors. Certain Target technologies are patent pending, with potential spinoffs in aviation, metallurgy and biofuels processing, while others are variations on well-established technology. The Sensor Test Target System is planned for extended installation at Allegany Ballistics Laboratory (Rocket Center, WV).

  10. Heat Coulomb blockade of one ballistic channel

    Science.gov (United States)

    Sivre, E.; Anthore, A.; Parmentier, F. D.; Cavanna, A.; Gennser, U.; Ouerghi, A.; Jin, Y.; Pierre, F.

    2018-02-01

    Quantum mechanics and Coulomb interaction dictate the behaviour of small circuits. The thermal implications cover fundamental topics from quantum control of heat to quantum thermodynamics, with prospects of novel thermal machines and an ineluctably growing influence on nanocircuit engineering. Experimentally, the rare observations thus far include the universal thermal conductance quantum and heat interferometry. However, evidence for many-body thermal effects paving the way to markedly different heat and electrical behaviours in quantum circuits remains wanting. Here we report on the observation of the Coulomb blockade of electronic heat flow from a small metallic circuit node, beyond the widespread Wiedemann-Franz law paradigm. We demonstrate this thermal many-body phenomenon for perfect (ballistic) conduction channels to the node, where it amounts to the universal suppression of precisely one quantum of conductance for the transport of heat, but none for electricity. The inter-channel correlations that give rise to such selective heat current reduction emerge from local charge conservation, in the floating node over the full thermal frequency range (<~temperature × kB/h). This observation establishes the different nature of the quantum laws for thermal transport in nanocircuits.

  11. Ballistic Josephson junctions based on CVD graphene

    Science.gov (United States)

    Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

    2018-04-01

    Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

  12. Rifle bullet penetration into ballistic gelatin.

    Science.gov (United States)

    Wen, Yaoke; Xu, Cheng; Jin, Yongxi; Batra, R C

    2017-03-01

    The penetration of a rifle bullet into a block of ballistic gelatin is experimentally and computationally studied for enhancing our understanding of the damage caused to human soft tissues. The gelatin is modeled as an isotropic and homogeneous elastic-plastic linearly strain-hardening material that obeys a polynomial equation of state. Effects of numerical uncertainties on penetration characteristics are found by repeating simulations with minute variations in the impact speed and the angle of attack. The temporary cavity formed in the gelatin and seen in pictures taken by two high speed cameras is found to compare well with the computed one. The computed time histories of the hydrostatic pressure at points situated 60 mm above the line of impact are found to have "two peaks", one due to the bullet impact and the other due to the bullet tumbling. Contours of the von Mises stress and of the effective plastic strain in the gelatin block imply that a very small region adjacent to the cavity surface is plastically deformed. The angle of attack is found to noticeably affect the penetration depth at the instant of the bullet tumbling through 90°. Copyright © 2016 Elsevier Ltd. All rights reserved.

  13. Magnetic Vortex Based Transistor Operations

    Science.gov (United States)

    Kumar, D.; Barman, S.; Barman, A.

    2014-01-01

    Transistors constitute the backbone of modern day electronics. Since their advent, researchers have been seeking ways to make smaller and more efficient transistors. Here, we demonstrate a sustained amplification of magnetic vortex core gyration in coupled two and three vortices by controlling their relative core polarities. This amplification is mediated by a cascade of antivortex solitons travelling through the dynamic stray field. We further demonstrated that the amplification can be controlled by switching the polarity of the middle vortex in a three vortex sequence and the gain can be controlled by the input signal amplitude. An attempt to show fan–out operation yielded gain for one of the symmetrically placed branches which can be reversed by switching the core polarity of all the vortices in the network. The above observations promote the magnetic vortices as suitable candidates to work as stable bipolar junction transistors (BJT). PMID:24531235

  14. Transistor challenges - A DRAM perspective

    International Nuclear Information System (INIS)

    Faul, Juergen W.; Henke, Dietmar

    2005-01-01

    Key challenges of the transistor scaling from a DRAM perspective will be reviewed. Both, array transistors as well as DRAM support devices face challenges that differ essentially from high performance logic device scaling. As a major difference, retention time and standby current requirements characterize special boundary conditions in the DRAM device design. Array device scaling is determined by a chip size driven aggressive node scaling. To continue scaling, major innovations need to be introduced into state-of-the-art planar array transistors. Alternatively, non planar device concepts will have to be evaluated. Support device design for DRAMs is driven by today's market demand for increased chip performances at little to no extra cost. Major innovations are required to continue that path. Besides this strive for performance increase, special limitations for 'on pitch' circuits at the array edge will come up due to the aggressive cell size scaling

  15. Magnetic Vortex Based Transistor Operations

    Science.gov (United States)

    Kumar, D.; Barman, S.; Barman, A.

    2014-02-01

    Transistors constitute the backbone of modern day electronics. Since their advent, researchers have been seeking ways to make smaller and more efficient transistors. Here, we demonstrate a sustained amplification of magnetic vortex core gyration in coupled two and three vortices by controlling their relative core polarities. This amplification is mediated by a cascade of antivortex solitons travelling through the dynamic stray field. We further demonstrated that the amplification can be controlled by switching the polarity of the middle vortex in a three vortex sequence and the gain can be controlled by the input signal amplitude. An attempt to show fan-out operation yielded gain for one of the symmetrically placed branches which can be reversed by switching the core polarity of all the vortices in the network. The above observations promote the magnetic vortices as suitable candidates to work as stable bipolar junction transistors (BJT).

  16. Doping To Reduce Base Resistances Of Bipolar Transistors

    Science.gov (United States)

    Lin, True-Lon

    1991-01-01

    Modified doping profile proposed to reduce base resistance of bipolar transistors. A p/p+ base-doping profile reduces base resistance without reducing current gain. Proposed low/high base-doping profile realized by such low-temperature deposition techniques as molecular-beam epitaxy, ultra-high-vacuum chemical-vapor deposition, and limited-reaction epitaxy. Produces desired doping profiles without excessive diffusion of dopant.

  17. Tunneling field effect transistor technology

    CERN Document Server

    Chan, Mansun

    2016-01-01

    This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

  18. Magnetic anisotropy and anisotropic ballistic conductance of thin magnetic wires

    International Nuclear Information System (INIS)

    Sabirianov, R.

    2006-01-01

    The magnetocrystalline anisotropy of thin magnetic wires of iron and cobalt is quite different from the bulk phases. The spin moment of monatomic Fe wire may be as high as 3.4 μ B , while the orbital moment as high as 0.5 μ B . The magnetocrystalline anisotropy energy (MAE) was calculated for wires up to 0.6 nm in diameter starting from monatomic wire and adding consecutive shells for thicker wires. I observe that Fe wires exhibit the change sign with the stress applied along the wire. It means that easy axis may change from the direction along the wire to perpendicular to the wire. We find that ballistic conductance of the wire depends on the direction of the applied magnetic field, i.e. shows anisotropic ballistic magnetoresistance. This effect occurs due to the symmetry dependence of the splitting of degenerate bands in the applied field which changes the number of bands crossing the Fermi level. We find that the ballistic conductance changes with applied stress. Even for thicker wires the ballistic conductance changes by factor 2 on moderate tensile stain in our 5x4 model wire. Thus, the ballistic conductance of magnetic wires changes in the applied field due to the magnetostriction. This effect can be observed as large anisotropic BMR in the experiment

  19. Approximate ballistics formulas for spherical pellets in free flight

    Directory of Open Access Journals (Sweden)

    E.J. Allen

    2018-02-01

    Full Text Available The ballistics equations for spherical pellets in free flight are simplified through appropriate scaling of the pellet velocity and pellet distance. Two different drag coefficient curves are averaged to yield a single curve applicable to shot pellets and round balls. The resulting S-shaped drag coefficient curve is approximated by three straight-line segments. The scaled ballistics equations are then solved exactly and simple formulas are found for the velocity and flight time with respect to trajectory distance. The formulas are applicable to spherical shot pellets and round balls of any composition under any atmospheric conditions. The formulas are amenable to quick and easy computation and may also serve as an aid in understanding and comparing black-box ballistics calculators. For shotshell ballistics, an important assumption in the present investigation is that the pellets are moving as single, free spheres and not as a dense cloud or in a shot column, in particular, the pellets are not interacting during flight. Therefore, the formulas are most appropriate for single round balls, for large shot sizes, and for pellets of small shot size fired from open chokes. The formulas are clear and accessible, and can be implemented by military or law enforcement personnel as well as hunters and shooters. This work differs from previous investigations in that accurate ballistics formulas are derived for spherical projectiles of shotguns and muzzleloaders using realistic drag coefficients.

  20. Transition to ballistic regime for heat transport in helium II

    Energy Technology Data Exchange (ETDEWEB)

    Sciacca, Michele, E-mail: michele.sciacca@unipa.it [Dipartimento Scienze Agrarie e Forestali, Università degli studi di Palermo, Viale delle Scienze, 90128 Palermo (Italy); Departament de Física, Universitat Autònoma de Barcelona, 08193 Bellaterra, Catalonia (Spain); Sellitto, Antonio, E-mail: ant.sellitto@gmail.com [Dipartimento di Matematica, Informatica ed Economia, Università della Basilicata, Campus Macchia Romana, 85100 Potenza (Italy); Jou, David, E-mail: david.jou@uab.cat [Departament de Física, Universitat Autònoma de Barcelona, 08193 Bellaterra, Catalonia (Spain); Institut d' Estudis Catalans, Carme 47, 08001 Barcelona, Catalonia (Spain)

    2014-07-04

    The size-dependent and flux-dependent effective thermal conductivity of narrow capillaries filled with superfluid helium is analyzed from a thermodynamic continuum perspective. The classical Landau evaluation of the effective thermal conductivity of quiescent superfluid, or the Gorter–Mellinck regime of turbulent superfluids, is extended to describe the transition to ballistic regime in narrow channels wherein the radius R is comparable to (or smaller than) the phonon mean-free path ℓ in superfluid helium. To do so, we start from an extended equation for the heat flux incorporating non-local terms, and take into consideration a heat slip flow along the walls of the tube. This leads from an effective thermal conductivity proportional to R{sup 2} (Landau regime) to another one proportional to Rℓ (ballistic regime). We consider two kinds of flows: along cylindrical pipes and along two infinite parallel plates. - Highlights: • Heat transport in counterflow helium in the ballistic regime. • The one-fluid model based on the Extended Thermodynamics is used. • The transition from the Landau regime to the ballistic regime. • The transition from quantum turbulence to ballistic regime.

  1. Ballistic heat conduction and mass disorder in one dimension

    International Nuclear Information System (INIS)

    Ong, Zhun-Yong; Zhang, Gang

    2014-01-01

    It is well-known that in the disordered harmonic chain, heat conduction is subballistic and the thermal conductivity (κ) scales asymptotically as lim L→∞ κ∝L 0.5 where L is the chain length. However, using the nonequilibrium Green's function (NEGF) method and analytical modelling, we show that there exists a critical crossover length scale (L C ) below which ballistic heat conduction (κ∝L) can coexist with mass disorder. This ballistic-to-subballistic heat conduction crossover is connected to the exponential attenuation of the phonon transmittance function Ξ i.e. Ξ(ω, L) = exp[−L/λ(ω)], where λ is the frequency-dependent attenuation length. The crossover length can be determined from the minimum attenuation length, which depends on the maximum transmitted frequency. We numerically determine the dependence of the transmittance on frequency and mass composition as well as derive a closed form estimate, which agrees closely with the numerical results. For the length-dependent thermal conductance, we also derive a closed form expression which agrees closely with numerical results and reproduces the ballistic to subballistic thermal conduction crossover. This allows us to characterize the crossover in terms of changes in the length, mass composition and temperature dependence, and also to determine the conditions under which heat conduction enters the ballistic regime. We describe how the mass composition can be modified to increase ballistic heat conduction. (paper)

  2. Analysing organic transistors based on interface approximation

    International Nuclear Information System (INIS)

    Akiyama, Yuto; Mori, Takehiko

    2014-01-01

    Temperature-dependent characteristics of organic transistors are analysed thoroughly using interface approximation. In contrast to amorphous silicon transistors, it is characteristic of organic transistors that the accumulation layer is concentrated on the first monolayer, and it is appropriate to consider interface charge rather than band bending. On the basis of this model, observed characteristics of hexamethylenetetrathiafulvalene (HMTTF) and dibenzotetrathiafulvalene (DBTTF) transistors with various surface treatments are analysed, and the trap distribution is extracted. In turn, starting from a simple exponential distribution, we can reproduce the temperature-dependent transistor characteristics as well as the gate voltage dependence of the activation energy, so we can investigate various aspects of organic transistors self-consistently under the interface approximation. Small deviation from such an ideal transistor operation is discussed assuming the presence of an energetically discrete trap level, which leads to a hump in the transfer characteristics. The contact resistance is estimated by measuring the transfer characteristics up to the linear region

  3. The four-gate transistor

    Science.gov (United States)

    Mojarradi, M. M.; Cristoveanu, S.; Allibert, F.; France, G.; Blalock, B.; Durfrene, B.

    2002-01-01

    The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.

  4. What Should Be the United States Policy towards Ballistic Missile Defense for Northeast Asia?

    National Research Council Canada - National Science Library

    Delgado, Roberto L

    2005-01-01

    .... The threat of ballistic missiles from Northeast Asia is especially high. China and North Korea are seen as the top threats in the region when it comes to the delivery of WMD through ballistic missiles...

  5. Learning without knowing: subliminal visual feedback facilitates ballistic motor learning

    DEFF Research Database (Denmark)

    Lundbye-Jensen, Jesper; Leukel, Christian; Nielsen, Jens Bo

    by subconscious (subliminal) augmented visual feedback on motor performance. To test this, 45 subjects participated in the experiment, which involved learning of a ballistic task. The task was to execute simple ankle plantar flexion movements as quickly as possible within 200 ms and to continuously improve...... by the learner, indeed facilitated ballistic motor learning. This effect likely relates to multiple (conscious versus unconscious) processing of visual feedback and to the specific neural circuitries involved in optimization of ballistic motor performance.......). It is a well- described phenomenon that we may respond to features of our surroundings without being aware of them. It is also a well-known principle, that learning is reinforced by augmented feedback on motor performance. In the present experiment we hypothesized that motor learning may be facilitated...

  6. Kinetics of diffusion-controlled and ballistically-controlled reactions

    International Nuclear Information System (INIS)

    Redner, S.

    1995-01-01

    The kinetics of diffusion-controlled two-species annihilation, A+B → O and single-species ballistically-controlled annihilation, A+A → O are investigated. For two-species annihilation, we describe the basic mechanism that leads to the formation of a coarsening mosaic of A- and B-domains. The implications of this picture on the distribution of reactants is discussed. For ballistic annihilation, dimensional analysis shows that the concentration and rms velocity decay as c∼t -α and v∼t -β , respectively, with α+β = 1 in any spatial dimension. Analysis of the Boltzmann equation for the evolution of the velocity distribution yields accurate predictions for the kinetics. New phenomena associated with discrete initial velocity distributions and with mixed ballistic and diffusive reactant motion are also discussed. (author)

  7. Ballistic spin filtering across the ferromagnetic-semiconductor interface

    Directory of Open Access Journals (Sweden)

    Y.H. Li

    2012-03-01

    Full Text Available The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical model for the ballistic spin filtering across the interface between ferromagnetic metals and semiconductor superlattice is developed by exciting the spin polarized electrons into n-type AlAs/GaAs superlattice layer at a much higher energy level and then ballistically tunneling through the barrier into the ferromagnetic film. Since both the helicity-modulated and static photocurrent responses are experimentally measurable quantities, the physical quantity of interest, the relative asymmetry of spin-polarized tunneling conductance, could be extracted experimentally in a more straightforward way, as compared with previous models. The present physical model serves guidance for studying spin detection with advanced performance in the future.

  8. Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts.

    Science.gov (United States)

    Schöneberg, J; Otte, F; Néel, N; Weismann, A; Mokrousov, Y; Kröger, J; Berndt, R; Heinze, S

    2016-02-10

    Anisotropic magnetoresistance, that is, the sensitivity of the electrical resistance of magnetic materials on the magnetization direction, is expected to be strongly enhanced in ballistic transport through nanoscale junctions. However, unambiguous experimental evidence of this effect is difficult to achieve. We utilize single-atom junctions to measure this ballistic anisotropic magnetoresistance (AMR). Single Co and Ir atoms are deposited on domains and domain walls of ferromagnetic Fe layers on W(110) to control their magnetization directions. They are contacted with nonmagnetic tips in a low-temperature scanning tunneling microscope to measure the junction conductances. Large changes of the magnetoresistance occur from the tunneling to the ballistic regime due to the competition of localized and delocalized d-orbitals, which are differently affected by spin-orbit coupling. This work shows that engineering the AMR at the single atom level is feasible.

  9. Development of high-density ceramic composites for ballistic applications

    International Nuclear Information System (INIS)

    Rupert, N.L.; Burkins, M.S.; Gooch, W.A.; Walz, M.J.; Levoy, N.F.; Washchilla, E.P.

    1993-01-01

    The application of ceramic composites for ballistic application has been generally developed with ceramics of low density, between 2.5 and 4.5 g/cm 2 . These materials have offered good performance in defeating small-caliber penetrators, but can suffer time-dependent degradation effects when thicker ceramic tiles are needed to defeat modem, longer, heavy metal penetrators that erode rather than break up. This paper addresses the ongoing development, fabrication procedures, analysis, and ballistic evaluation of thinner, denser ceramics for use in armor applications. Nuclear Metals Incorporated (NMI) developed a process for the manufacture of depleted uranium (DU) ceramics. Samples of the ceramics have been supplied to the US Army Research Laboratory (ARL) as part of an unfunded cooperative study agreement. The fabrication processes used, characterization of the ceramic, and a ballistic comparison between the DU-based ceramic with baseline Al 2 O 3 will be presented

  10. Design and Manufacturing Process for a Ballistic Missile

    Directory of Open Access Journals (Sweden)

    Zaharia Sebastian Marian

    2016-12-01

    Full Text Available Designing a ballistic missile flight depends on the mission and the stress to which the missile is subject. Missile’s requests are determined by: the organization of components; flight regime type, engine configuration and aerodynamic performance of the rocket flight. In this paper has been developed a ballistic missile with a smooth fuselage type, 10 control surfaces, 8 directional surfaces for cornering execution, 2 for maneuvers of execution to change the angle of incidence and 4 stabilizers direction. Through the technology of gluing and clamping of the shell and the use of titanium components, mass of ballistic missile presented a significant decrease in weight and a structure with high strength.

  11. A High-Voltage Level Tolerant Transistor Circuit

    NARCIS (Netherlands)

    Annema, Anne J.; Geelen, Godefridus Johannes Gertrudis Maria

    2001-01-01

    A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1)

  12. Coupling between a Langmuir wave and a ballistic perturbation

    International Nuclear Information System (INIS)

    Gervais, F.; Olivain, J.; Quemeneur, A.; Trocheris, M.

    1980-01-01

    The study of the mode-mode coupling usually neglects the ballistic contribution associated with parent waves. If this approximation is not made, a new mode, resulting from the interaction between the ballistic perturbation of pulsation ω 2 associated with one launched wave and the Landau component of pulsation ω 1 of the second one appears if ω 1 >ω 2 . The problem is solved theoretically and experimental evidence of this mode from measurements performed on a D.C. plasma column, confirms the results of this analysis

  13. Ballistics for neurosurgeons: Effects of firearms of customized cranioplasty implants

    OpenAIRE

    Lemcke, Johannes; L?ser, Rainer; Telm, Andreas; Meier, Ullrich

    2013-01-01

    Introduction: There are about 33,000 deaths caused by gunshot wounds in the USA each year. Probably half of these deaths result from head wounds. Among US Army soldiers, 17% of all ballistic injuries are head wounds. This means that, even in those protected by ballistic helmets, gunshot injuries to the head represent a danger. The aim of this study was to examine the effects of shelling of computer-aided designed (CAD) cranioplasty implants made of two different materials. Methods: An experim...

  14. Quantifying Uncertainty from Computational Factors in Simulations of a Model Ballistic System

    Science.gov (United States)

    2017-08-01

    Ballistic System by Daniel J Hornbaker Approved for public release; distribution is unlimited. NOTICES...Uncertainty from Computational Factors in Simulations of a Model Ballistic System by Daniel J Hornbaker Weapons and Materials Research...November 2016 4. TITLE AND SUBTITLE Quantifying Uncertainty from Computational Factors in Simulations of a Model Ballistic System 5a. CONTRACT NUMBER

  15. Organic field-effect transistors using single crystals.

    Science.gov (United States)

    Hasegawa, Tatsuo; Takeya, Jun

    2009-04-01

    Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

  16. Organic field-effect transistors using single crystals

    Directory of Open Access Journals (Sweden)

    Tatsuo Hasegawa and Jun Takeya

    2009-01-01

    Full Text Available Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs, the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

  17. Light Emitting Transistors of Organic Single Crystals

    Science.gov (United States)

    Iwasa, Yoshihiro

    2009-03-01

    Organic light emitting transistors (OLETs) are attracting considerable interest as a novel function of organic field effect transistors (OFETs). Besides a smallest integration of light source and current switching devices, OLETs offer a new opportunity in the fundamental research on organic light emitting devices. The OLET device structure allows us to use organic single crystals, in contrast to the organic light emitting diodes (OLEDs), the research of which have been conducted predominantly on polycrystalline or amorphous thin films. In the case of OFETs, use of single crystals have produced a significant amount of benefits in the studies of pursuit for the highest performance limit of FETs, intrinsic transport mechanism in organic semiconductors, and application of the single crystal transistors. The study on OLETs have been made predominantly on polycrystalline films or multicomponent heterojunctions, and single crystal study is still limited to tetracene [1] and rubrene [2], which are materials with relatively high mobility, but with low photoluminescence efficiency. In this paper, we report fabrication of single crystal OLETs of several kinds of highly luminescent molecules, emitting colorful light, ranging from blue to red. Our strategy is single crystallization of monomeric or oligomeric molecules, which are known to have a very high photoluminescence efficiency. Here we report the result on single crystal LETs of rubrene (red), 4,4'-bis(diphenylvinylenyl)-anthracene (green), 1,4-bis(5-phenylthiophene-2-yl)benzene (AC5) (green), and 1,3,6,8-tetraphenylpyrene (TPPy) (blue), all of which displayed ambipolar transport as well as peculiar movement of voltage controlled movement of recombination zone, not only from the surface of the crystal but also from the edges of the crystals, indicting light confinement inside the crystal. Realization of ambipolar OLET with variety of single crystals indicates that the fabrication method is quite versatile to various light

  18. Power transistor module for high current applications

    International Nuclear Information System (INIS)

    Cilyo, F.F.

    1975-01-01

    One of the parts needed for the control system of the 400-GeV accelerator at Fermilab was a power transistor with a safe operating area of 1800A at 50V, dc current gain of 100,000 and 20 kHz bandwidth. Since the commercially available discrete devices and power hybrid packages did not meet these requirements, a power transistor module was developed which performed satisfactorily. By connecting 13 power transistors in parallel, with due consideration for network and heat dissipation problems, and by driving these 13 with another power transistor, a super power transistor is made, having an equivalent current, power, and safe operating area capability of 13 transistors. For higher capabilities, additional modules can be conveniently added. (auth)

  19. Quantum transport and dielectric response of nanometer scale transistors using empirical pseudopotentials

    Science.gov (United States)

    Fang, Jingtian

    As transistors, the most basic component of central processing units (CPU) in all electronic products, are scaling down to the nanometer scale, quantum mechanical effects must be studied to investigate their performance. A formalism to treat quantum electronic transport at the nanometer scale based on empirical pseudopotentials is presented in this dissertation. We develop the transport equations and show the expressions to calculate the device characteristics, such as device current and charge density. We apply this formalism to study ballistic transport in a gate-all-around (GAA) silicon nanowire field-effect transistor (FET) with a body-size of 0.39 nm, a gate length of 6.52 nm, and an effective oxide thickness of 0.43 nm. Simulation results show that this device exhibits a subthreshold slope (SS) of ˜66 mV/decade and a drain-induced barrier-lowering of ~2.5 mV/V. This formalism is also applied to assess the ballistic performance of FETs with armchair-edge graphene nanoribbon (aGNRs) and silicon nanowire (SiNWs) channels and with gate lengths ranging from 5 nm to 15 nm. The device characteristics of the transistors with a 5 nm gate length are compared. Source-to-drain tunneling effects are investigated for SiNWFETs and GNRFETs by comparing the I-V characteristics of each respective transistor with different channel lengths. While a uniform dielectric constant is assumed in solving Poisson equation for the devices simulated above, the knowledge of the atomistic (i.e., local) dielectric permittivity that considers the atomistic electron distribution and quantum-confinement effect is necessary to treat the electrostatic properties accurately. The local permittivity can also provide information about the dielectric property at the interfaces. We use the random-phase approximation, first-order perturbation theory, and empirical pseudopotentials to calculate the static polarizability, susceptibility, and dielectric response function in graphene and GNRs. While the

  20. Gate controlled high efficiency ballistic energy conversion system

    NARCIS (Netherlands)

    Xie, Yanbo; Bos, Diederik; de Boer, Hans L.; van den Berg, Albert; Eijkel, Jan C.T.; Zengerle, R.

    2013-01-01

    Last year we demonstrated the microjet ballistic energy conversion system[1]. Here we show that the efficiency of such a system can be further improved by gate control. With gate control the electrical current generation is enhanced a hundred times with respect to the current generated from the zeta

  1. Aerodynamic heating of ballistic missile including the effects of gravity

    Indian Academy of Sciences (India)

    The aerodynamic heating of a ballistic missile due to only convection is analysed taking into consideration the effects of gravity. The amount of heat transferred to the wetted area and to the nose region has been separately determined, unlike A Miele's treatise without consideration of gravity. The peak heating ratesto the ...

  2. Aerodynamic heating of ballistic missile including the effects of gravity

    Indian Academy of Sciences (India)

    Abstract. The aerodynamic heating of a ballistic missile due to only convection is analysed taking into consideration the effects of gravity. The amount of heat transferred to the wetted area and to the nose region has been separately determined, unlike A Miele's treatise without consideration of gravity. The peak heating rates ...

  3. The application of computed tomography in wound ballistics research

    Science.gov (United States)

    Tsiatis, Nick; Moraitis, Konstantinos; Papadodima, Stavroula; Spiliopoulou, Chara; Kelekis, Alexis; Kelesis, Christos; Efstathopoulos, Efstathios; Kordolaimi, Sofia; Ploussi, Agapi

    2015-09-01

    In wound ballistics research there is a relationship between the data that characterize a bullet and the injury resulted after shooting when it perforates the human body. The bullet path in the human body following skin perforation as well as the damaging effect cannot always be predictable as they depend on various factors such as the bullet's characteristics (velocity, distance, type of firearm and so on) and the tissue types that the bullet passes through. The purpose of this presentation is to highlight the contribution of Computed Tomography (CT) in wound ballistics research. Using CT technology and studying virtual “slices” of specific areas on scanned human bodies, allows the evaluation of density and thickness of the skin, the subcutaneous tissue, the muscles, the vital organs and the bones. Density data taken from Hounsfield units can be converted in g/ml by using the appropriate software. By evaluating the results of this study, the anatomy of the human body utilizing ballistic gel will be reproduced in order to simulate the path that a bullet follows. The biophysical analysis in wound ballistics provides another application of CT technology, which is commonly used for diagnostic and therapeutic purposes in various medical disciplines.

  4. Quantum ballistic evolution in quantum mechanics: Application to quantum computers

    International Nuclear Information System (INIS)

    Benioff, P.

    1996-01-01

    Quantum computers are important examples of processes whose evolution can be described in terms of iterations of single-step operators or their adjoints. Based on this, Hamiltonian evolution of processes with associated step operators T is investigated here. The main limitation of this paper is to processes which evolve quantum ballistically, i.e., motion restricted to a collection of nonintersecting or distinct paths on an arbitrary basis. The main goal of this paper is proof of a theorem which gives necessary and sufficient conditions that T must satisfy so that there exists a Hamiltonian description of quantum ballistic evolution for the process, namely, that T is a partial isometry and is orthogonality preserving and stable on some basis. Simple examples of quantum ballistic evolution for quantum Turing machines with one and with more than one type of elementary step are discussed. It is seen that for nondeterministic machines the basis set can be quite complex with much entanglement present. It is also proven that, given a step operator T for an arbitrary deterministic quantum Turing machine, it is decidable if T is stable and orthogonality preserving, and if quantum ballistic evolution is possible. The proof fails if T is a step operator for a nondeterministic machine. It is an open question if such a decision procedure exists for nondeterministic machines. This problem does not occur in classical mechanics. Also the definition of quantum Turing machines used here is compared with that used by other authors. copyright 1996 The American Physical Society

  5. Phase conjugated Andreev backscattering in two-dimensional ballistic cavities

    NARCIS (Netherlands)

    Morpurgo, A.F.; Holl, S.; Wees, B.J.van; Klapwijk, T.M; Borghs, G.

    1997-01-01

    We have experimentally investigated transport in two-dimensional ballistic cavities connected to a point contact and to two superconducting electrodes with a tunable macroscopic phase difference. The point contact resistance oscillates as a function of the phase difference in a way which reflects

  6. Noninteracting beams of ballistic two-dimensional electrons

    International Nuclear Information System (INIS)

    Spector, J.; Stormer, H.L.; Baldwin, K.W.; Pfeiffer, L.N.; West, K.W.

    1991-01-01

    We demonstrate that two beams of two-dimensional ballistic electrons in a GaAs-AlGaAs heterostructure can penetrate each other with negligible mutual interaction analogous to the penetration of two optical beams. This allows electrical signal channels to intersect in the same plane with negligible crosstalk between the channels

  7. Comparison of ballistic impact effects between biological tissue and gelatin.

    Science.gov (United States)

    Jin, Yongxi; Mai, Ruimin; Wu, Cheng; Han, Ruiguo; Li, Bingcang

    2018-02-01

    Gelatin is commonly used in ballistic testing as substitute for biological tissue. Comparison of ballistic impact effects produced in the gelatin and living tissue is lacking. The work in this paper was aimed to compare the typical ballistic impact effects (penetration trajectory, energy transfer, temporary cavity) caused by 4.8mm steel ball penetrating the 60kg porcine hind limbs and 10wt% gelatin. The impact event in the biological tissue was recorded by high speed flash X-ray machine at different delay time, while the event in the gelatin continuously recorded by high speed video was compared to that in the biological tissue. The collected results clearly displayed that the ballistic impact effects in the muscle and gelatin were similar for the steel ball test; as for instance, the projectile trajectory in the two targets was basically similar, the process of energy transfer was highly coincident, and the expansion of temporary cavity followed the same pattern. This study fully demonstrated that choosing gelatin as muscle simulant was reasonable. However, the maximum temporary cavity diameter in the gelatin was a little larger than that in the muscle, and the expansion period of temporary cavity was longer in the gelatin. Additionally, the temporary cavity collapse process in the two targets followed different patterns, and the collapse period in the gelatin was two times as long as that in the muscle. Copyright © 2017 Elsevier Ltd. All rights reserved.

  8. Single-transistor-clocked flip-flop

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Peiyi; Darwish, Tarek; Bayoumi, Magdy

    2005-08-30

    The invention provides a low power, high performance flip-flop. The flip-flop uses only one clocked transistor. The single clocked transistor is shared by the first and second branches of the device. A pulse generator produces a clock pulse to trigger the flip-flop. In one preferred embodiment the device can be made as a static explicit pulsed flip-flop which employs only two clocked transistors.

  9. Establishment of design space for high current gain in III-N hot electron transistors

    Science.gov (United States)

    Gupta, Geetak; Ahmadi, Elaheh; Suntrup, Donald J., III; Mishra, Umesh K.

    2018-01-01

    This paper establishes the design space of III-N hot electron transistors (HETs) for high current gain by designing and fabricating HETs with scaled base thickness. The device structure consists of GaN-based emitter, base and collector regions where emitter and collector barriers are implemented using AlN and InGaN layers, respectively, as polarization-dipoles. Electrons tunnel through the AlN layer to be injected into the base at a high energy where they travel in a quasi-ballistic manner before being collected. Current gain increases from 1 to 3.5 when base thickness is reduced from 7 to 4 nm. The extracted mean free path (λ mfp) is 5.8 nm at estimated injection energy of 1.5 eV.

  10. A simple drain current model for Schottky-barrier carbon nanotube field effect transistors

    International Nuclear Information System (INIS)

    Jimenez, D; Cartoixa, X; Miranda, E; Sune, J; Chaves, F A; Roche, S

    2007-01-01

    We report on a new computational model to efficiently simulate carbon nanotube-based field effect transistors (CNT-FET). In the model, a central region is formed by a semiconducting nanotube that acts as the conducting channel, surrounded by a thin oxide layer and a metal gate electrode. At both ends of the semiconducting channel, two semi-infinite metallic reservoirs act as source and drain contacts. The current-voltage characteristics are computed using the Landauer formalism, including the effect of the Schottky barrier physics. The main operational regimes of the CNT-FET are described, including thermionic and tunnel current components, capturing ambipolar conduction, multichannel ballistic transport and electrostatics dominated by the nanotube capacitance. The calculations are successfully compared to results given by more sophisticated methods based on non-equilibrium Green's function formalism (NEGF)

  11. High current transistor pulse generator

    Science.gov (United States)

    Nesterov, V.; Cassel, R.

    1991-05-01

    A solid state pulse generator capable of delivering high current trapezoidally shaped pulses into an inductive load has been developed at SLAC. Energy stored in the capacitor bank of the pulse generator is switched to the load through a pair of Darlington transistors. A combination of diodes and Darlington transistors is used to obtain trapezoidal or triangular shaped current pulses into an inductive load and to recover the remaining energy in the same capacitor bank without reversing capacitor voltage. The transistors work in the switch mode, and the power losses are low. The rack mounted pulse generators presently used at SLAC contain a 660 microfarad storage capacitor bank and can deliver 400 amps at 800 volts into inductive loads up to 3 mH. The pulse generators are used in several different power systems, including pulse to pulse bipolar power supplies and in application with current pulses distributed into different inductive loads. The current amplitude and discharge time are controlled by the central computer system through a specially developed multichannel controller. Several years of operation with the pulse generators have proven their consistent performance and reliability.

  12. High current transistor pulse generator

    International Nuclear Information System (INIS)

    Nesterov, V.; Cassel, R.

    1991-05-01

    A solid state pulse generator capable of delivering high current trapezoidally shaped pulses into an inductive load has been developed at SLAC. Energy stored in the capacitor bank of the pulse generator is switched to the load through a pair of Darlington transistors. A combination of diodes and Darlington transistors is used to obtain trapezoidal or triangular shaped current pulses into an inductive load and to recover the remaining energy in the same capacitor bank without reversing capacitor voltage. The transistors work in the switch mode, and the power losses are low. The rack mounted pulse generators presently used at SLAC contain a 660 microfarad storage capacitor bank and can deliver 400 amps at 800 volts into inductive loads up to 3 mH. The pulse generators are used in several different power systems, including pulse to pulse bipolar power supplies and in application with current pulses distributed into different inductive loads. The current amplitude and discharge time are controlled by the central computer system through a specially developed multichannel controller. Several years of operation with the pulse generators have proven their consistent performance and reliability. 8 figs

  13. Nanowire Field-Effect Transistors : Sensing Simplicity?

    NARCIS (Netherlands)

    Mescher, M.

    2014-01-01

    Silicon nanowires are structures made from silicon with at least one spatial dimension in the nanometer regime (1-100 nm). From these nanowires, silicon nanowire field-effect transistors can be constructed. Since their introduction in 2001 silicon nanowire field-effect transistors have been studied

  14. Ultrasmall transistor-based light sources

    DEFF Research Database (Denmark)

    With Jensen, Per Baunegaard; Tavares, Luciana; Kjelstrup-Hansen, Jakob

    Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip.......Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip....

  15. Operation and modeling of the MOS transistor

    CERN Document Server

    Tsividis, Yannis

    2011-01-01

    Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor - the key element of modern microelectronic chips.

  16. Ferroelectric transistor memory arrays on flexible foils

    NARCIS (Netherlands)

    Breemen, A. van; Kam, B.; Cobb, B.; Rodriguez, F.G.; Heck, G. van; Myny, K.; Marrani, A.; Vinciguerra, V.; Gelinck, G.H.

    2013-01-01

    In this paper, we successfully fabricated and operated passive matrix P(VDF-TrFE) transistor arrays, i.e. memory arrays in which no pass-transistors or other additional electronic components are used. Because of the smaller cell, a higher integration density is possible. We demonstrate arrays up to

  17. The spinvalve transistor: technologies and progress

    NARCIS (Netherlands)

    Lodder, J.C.; Monsma, D.J.; Vlutters, R.; Shimatsu, T.; Shimatsu, T.

    1999-01-01

    The paper describes the necessary technologies needed for realising a RT operating spin-valve transistor (SVT) which is in fact a magnetic controlled metal base transistor. The preparation of a 350×350 μm2 SVT consisting of an Si emitter and collector and Co/Cu/Co GMR multilayer are described. The

  18. Floating-Emitter Solar-Cell Transistor

    Science.gov (United States)

    Sah, C. T.; Cheng, L. J.

    1986-01-01

    Conceptual transistor embedded in photovoltaic diode promises to increase efficiency to more than 20 percent. Solar-cell transistor has front-surface contact, rear contact, and floating emitter. Variety of other contact and junction configurations possible, but do not offer ease of fabrication in combination with high performance.

  19. The Influence of Morphology on High-Performance Polymer Field-Effect Transistors

    DEFF Research Database (Denmark)

    Tsao, Hoi Nok; Cho, Don; Andreasen, Jens Wenzel

    2009-01-01

    The influence of molecular packing on the performance of polymer organic field-effect transistors is illustrated in this work. Both close -stacking distance and long-range order are important for achieving high mobilities. By aligning the polymers from solution, long-range order is induced...

  20. Universal power transistor base drive control unit

    Science.gov (United States)

    Gale, Allan R.; Gritter, David J.

    1988-01-01

    A saturation condition regulator system for a power transistor which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition.

  1. Magnetoamplification in a bipolar magnetic junction transistor.

    Science.gov (United States)

    Rangaraju, N; Peters, J A; Wessels, B W

    2010-09-10

    We have demonstrated the first bipolar magnetic junction transistor using a dilute magnetic semiconductor. For an InMnAs p-n-p transistor magnetoamplification is observed at room temperature. The observed magnetoamplification is attributed to the magnetoresistance of the magnetic semiconductor InMnAs heterojunction. The magnetic field dependence of the transistor characteristics confirm that the magnetoamplification results from the junction magnetoresistance. To describe the experimentally observed transistor characteristics, we propose a modified Ebers-Moll model that includes a series magnetoresistance attributed to spin-selective conduction. The capability of magnetic field control of the amplification in an all-semiconductor transistor at room temperature potentially enables the creation of new computer logic architecture where the spin of the carriers is utilized.

  2. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

    KAUST Repository

    Fahad, Hossain M.

    2011-10-12

    We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.

  3. Nanofluidic diode and bipolar transistor.

    Science.gov (United States)

    Daiguji, Hirofumi; Oka, Yukiko; Shirono, Katsuhiro

    2005-11-01

    Theoretical modeling of ionic distribution and transport in a nanochannel containing a surface charge on its wall, 30 nm high and 5 microm long, suggests that ionic current can be controlled by locally modifying the surface charge density through a gate electrode, even if the electrical double layers are not overlapped. When the surface charge densities at the right and left halves of a channel are the same absolute value but of different signs, this could form the basis of a nanofluidic diode. When the surface charge density at the middle part of a channel is modified, this could form the basis of a nanofluidic bipolar transistor.

  4. Imaging ballistic carrier trajectories in graphene using scanning gate microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Morikawa, Sei; Masubuchi, Satoru [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Dou, Ziwei; Wang, Shu-Wei; Smith, Charles G.; Connolly, Malcolm R., E-mail: mrc61@cam.ac.uk [Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge CB3 0HE (United Kingdom); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Machida, Tomoki, E-mail: tmachida@iis.u-tokyo.ac.jp [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)

    2015-12-14

    We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local electric field generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanning the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector.

  5. Earth to Mars Ballistic Mission Opportunities from Naro Space Center

    Directory of Open Access Journals (Sweden)

    Sung-Moon Yoo

    2003-12-01

    Full Text Available Earth to Mars ballistic mission opportunities from Naro Space Center are studied. Determining ballistic mission opportunities can be divided into two major parts, i.e. the launch window and the daily launch window determination. At the launch window determination parts, Porkchop diagrams of Earth launch C3 magnitude, total mission duration, declination of V∞ vector at the Earth launch, and declination & right ascension of V∞ vector at the Mars arrival are examined. The location of launch site and rotation effects of the Earth are considered during the daily launch window determination parts. Using Lambert method, various Porkchop diagrams of launching in 2027 are examined for example. The daily launch window of Naro Space Center at that year was checked to verify the launch possibility by comparing with the Kennedy Space Center.

  6. Ballistic penetration of multi-layered ceramic/steel targets

    Science.gov (United States)

    Zavattieri, Pablo D.; Espinosa, Horacio D.

    2000-04-01

    The response of multi-layered ceramic/steel targets to high velocity impact and penetration has been investigated through experiments and finite element simulations. Damage quantification and the material stresses and velocity histories provided by experiments are used as constraints to be satisfied by numerical simulations of the ballistic penetration event. Experimental and numerical observations demonstrate that the penetration process does not strongly depend on the ceramic material as usually assumed by most investigators. Instead, local and global effects which are related to material performance and structural features have been found to be very important factors that affect the overall target performance. These findings show that meaningful light weight armor design can only be accomplished through a combined experimental/numerical study in which relevant ballistic materials and structures are simultaneously investigated.

  7. Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency

    Science.gov (United States)

    Ni, X.; Li, X.; Lee, J.; Liu, S.; Avrutin, V.; Matulionis, A.; Özgür, Ü.; Morkoç, H.

    2010-08-01

    Significant progress in the power conversion efficiency and brightness of InGaN-based light emitting diodes (LEDs) has paved the way for these devices to be considered for LED lighting. In this realm, however, the efficiency must be retained at high injection levels in order to generate the lumens required. Unfortunately, LEDs undergo a monotonic efficiency degradation starting at current densities even lower than 50 A/cm 2 which would hinder LED insertion into the general lighting market. The physical origins for the loss of efficiency retention are at present a topic of intense debate given its enormous implications. This paper reviews the current status of the field regarding the mechanisms that have been put forward as being responsible for the loss of efficiency, such as Auger recombination, electron overflow (spillover), current crowding, asymmetric injection of electrons and holes, and poor transport of holes through the active region, the last one being applicable to multiple quantum well designs. While the Auger recombination received early attention, increasing number of researchers seem to think otherwise at the moment in that it alone (if any) cannot explain the progressively worsening loss of efficiency reduction as the InN mole fraction is increased. Increasing number of reports seems to suggest that the electron overflow is one of the major causes of efficiency degradation. The physical driving force for this is likely to be the relatively poor hole concentration and transport, and skewed injection favoring electrons owing to their relatively high concentration. Most intriguingly there is recent experimental convincing evidence to suggest that quasi-ballistic electrons in the active region, which are not able to thermalize within the residence time and possibly longitudinal optical phonon lifetime, contribute to the carrier overflow which would require an entirely new thought process in the realm of LEDs.

  8. Multicolored Nanofiber Based Organic Light-Emitting Transistor

    DEFF Research Database (Denmark)

    With Jensen, Per Baunegaard; Kjelstrup-Hansen, Jakob; Tavares, Luciana

    For optoelectronic applications, organic semiconductors have several advantages over their inorganic counterparts such as facile synthesis, tunability via synthetic chemistry, and low temperature processing. Self-assembled, molecular crystalline nanofibers are of particular interest as they could...... driven device by combining nanofibers made from two different molecules, parahexaphenylene (p6P) and 5,5´-Di-4-biphenyl-2,2´-bithiophene (PPTTPP), which emits blue and green light, respectively. The organic nanofibers are implemented on a bottom gate/bottom contact field-effect transistor platform using...

  9. Sino-Japanese relations and ballistic missile defence

    OpenAIRE

    Hughes, Christopher W.

    2001-01-01

    Since December 1998, the Japanese government has formally committed itself to undertake cooperative technological research with the US into Ballistic Missile Defence (BMD). Japanese government policy-makers stress that the BMD project remains at present purely at the research stage, and that separate government decisions will be necessary before any progression towards the stages of development, production and deployment. Nevertheless, even at the research phase it is clear that both Japanese...

  10. Effect of the metal work function on the electrical properties of carbon nanotube network transistors

    International Nuclear Information System (INIS)

    Kim, Un Jeong; Ko, Dae Young; Kil, Joon Pyo; Lee, Jung Wha; Park, Wan Jun

    2012-01-01

    A nearly perfect semiconducting single-walled carbon nanotube random network thin film transistor array was fabricated, and its reproducible transport properties were investigated. The effects of the metal work function for both the source and the drain on the electrical properties of the transistors were systematically investigated. Three different metal electrodes, Al, Ti, and Pd, were employed. As the metal work function increased, p-type behavior became dominant, and the field effect hole mobility dramatically increased. Also, the Schottky barrier of the Ti-nanotube contact was invariant to the molecular adsorption of species in air.

  11. Giant electron-hole transport asymmetry in ultra-short quantum transistors

    Science.gov (United States)

    McRae, A. C.; Tayari, V.; Porter, J. M.; Champagne, A. R.

    2017-05-01

    Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e-h charging energy asymmetry). We parameterize the e-h transport asymmetry by the ratio of the hole and electron charging energies ηe-h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe-h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV.

  12. Viscoelastic shock wave in ballistic gelatin behind soft body armor.

    Science.gov (United States)

    Liu, Li; Fan, Yurun; Li, Wei

    2014-06-01

    Ballistic gelatins are widely used as a surrogate of biological tissue in blunt trauma tests. Non-penetration impact tests of handgun bullets on the 10wt% ballistic gelatin block behind soft armor were carried out in which a high-speed camera recorded the crater׳s movement and pressure sensors imbedded in the gelatin block recorded the pressure waves at different locations. The observed shock wave attenuation indicates the necessity of considering the gelatin׳s viscoelasticity. A three-element viscoelastic constitutive model was adopted, in which the relevant parameters were obtained via fitting the damping free oscillations at the beginning of the creep-mode of rheological measurement, and by examining the data of published split Hopkinson pressure bar (SHPB) experiments. The viscoelastic model is determined by a retardation time of 5.5×10(-5)s for high oscillation frequencies and a stress relaxation time of 2.0-4.5×10(-7)s for shock wave attenuation. Using the characteristic-line method and the spherical wave assumption, the propagation of impact pressure wave front and the subsequent unloading profile can be simulated using the experimental velocity boundary condition. The established viscoelastic model considerably improves the prediction of shock wave attenuation in the ballistic gelatin. Copyright © 2014 Elsevier Ltd. All rights reserved.

  13. The use of gelatine in wound ballistics research.

    Science.gov (United States)

    Carr, D J; Stevenson, T; Mahoney, P F

    2018-04-25

    Blocks of gelatine are used in both lethality and survivability studies for broadly the same reason, i.e. comparison of ammunition effects using a material that it is assumed represents (some part of) the human body. The gelatine is used to visualise the temporary and permanent wound profiles; elements of which are recognised as providing a reasonable approximation to wounding in humans. One set of researchers aim to improve the lethality of the projectile, and the other to understand the effects of the projectile on the body to improve survivability. Research areas that use gelatine blocks are diverse and include ammunition designers, the medical and forensics communities and designers of ballistic protective equipment (including body armour). This paper aims to provide an overarching review of the use of gelatine for wound ballistics studies; it is not intended to provide an extensive review of wound ballistics as that already exists, e.g. Legal Med 23:21-29, 2016. Key messages are that test variables, projectile type (bullet, fragmentation), impact site on the body and intermediate layers (e.g. clothing, personal protective equipment (PPE)) can affect the resulting wound profiles.

  14. Ballistic Phonon Penetration Depth in Amorphous Silicon Dioxide.

    Science.gov (United States)

    Yang, Lin; Zhang, Qian; Cui, Zhiguang; Gerboth, Matthew; Zhao, Yang; Xu, Terry T; Walker, D Greg; Li, Deyu

    2017-12-13

    Thermal transport in amorphous silicon dioxide (a-SiO 2 ) is traditionally treated as random walks of vibrations owing to its greatly disordered structure, which results in a mean free path (MFP) approximately the same as the interatomic distance. However, this picture has been debated constantly and in view of the ubiquitous existence of thin a-SiO 2 layers in nanoelectronic devices, it is imperative to better understand this issue for precise thermal management of electronic devices. Different from the commonly used cross-plane measurement approaches, here we report on a study that explores the in-plane thermal conductivity of double silicon nanoribbons with a layer of a-SiO 2 sandwiched in-between. Through comparing the thermal conductivity of the double ribbon samples with that of corresponding single ribbons, we show that thermal phonons can ballistically penetrate through a-SiO 2 of up to 5 nm thick even at room temperature. Comprehensive examination of double ribbon samples with various oxide layer thicknesses and van der Waals bonding strengths allows for extraction of the average ballistic phonon penetration depth in a-SiO 2 . With solid experimental data demonstrating ballistic phonon transport through a-SiO 2 , this work should provide important insight into thermal management of electronic devices.

  15. Hybrid Composite Laminates Reinforced with Kevlar/Carbon/Glass Woven Fabrics for Ballistic Impact Testing

    Directory of Open Access Journals (Sweden)

    Elias Randjbaran

    2014-01-01

    Full Text Available Current study reported a facile method to investigate the effects of stacking sequence layers of hybrid composite materials on ballistic energy absorption by running the ballistic test at the high velocity ballistic impact conditions. The velocity and absorbed energy were accordingly calculated as well. The specimens were fabricated from Kevlar, carbon, and glass woven fabrics and resin and were experimentally investigated under impact conditions. All the specimens possessed equal mass, shape, and density; nevertheless, the layers were ordered in different stacking sequence. After running the ballistic test at the same conditions, the final velocities of the cylindrical AISI 4340 Steel pellet showed how much energy was absorbed by the samples. The energy absorption of each sample through the ballistic impact was calculated; accordingly, the proper ballistic impact resistance materials could be found by conducting the test. This paper can be further studied in order to characterise the material properties for the different layers.

  16. Hybrid composite laminates reinforced with Kevlar/carbon/glass woven fabrics for ballistic impact testing.

    Science.gov (United States)

    Randjbaran, Elias; Zahari, Rizal; Jalil, Nawal Aswan Abdul; Majid, Dayang Laila Abang Abdul

    2014-01-01

    Current study reported a facile method to investigate the effects of stacking sequence layers of hybrid composite materials on ballistic energy absorption by running the ballistic test at the high velocity ballistic impact conditions. The velocity and absorbed energy were accordingly calculated as well. The specimens were fabricated from Kevlar, carbon, and glass woven fabrics and resin and were experimentally investigated under impact conditions. All the specimens possessed equal mass, shape, and density; nevertheless, the layers were ordered in different stacking sequence. After running the ballistic test at the same conditions, the final velocities of the cylindrical AISI 4340 Steel pellet showed how much energy was absorbed by the samples. The energy absorption of each sample through the ballistic impact was calculated; accordingly, the proper ballistic impact resistance materials could be found by conducting the test. This paper can be further studied in order to characterise the material properties for the different layers.

  17. BN / Graphene / BN RF Transistors

    Science.gov (United States)

    Wang, Han; Taychatanapat, Thiti; Hsu, Allen; Jarillo-Herrero, Pablo; Palacios, Tomas

    2011-03-01

    In this work we demonstrate the first BN/graphene/BN transistor for high frequency RF applications. This sandwich structure allows a significant improvement in the mobility of graphene, which reaches more than 18,000 cm2 /Vs at room temperature. Graphene field effect transistors (GFETs) have been fabricated with LDS = 800 nm and LG = 300 nm. The minimum conduction point of these devices is very close to zero, a result of the negligible substrate doping to the graphene. A current density in excess of 1 A/mm and DC transconductance above 200 mS/mm are achieved for both electron and hole conductions. RF characterization is performed for the first time on this device structure and initial results show a current-gain cut-off frequency fT = 10 GHz. These experimental results have been combined with simulations of the small-signal model to study the scaling potential of these GFETs for high frequency applications. The impact of the access resistances (Rs , Rd) , the capacitances (Cgs , Cgd , Cds) , and the transconductance (g m) on the frequency performance of the GFETs has also been studied. Finally, the fabricated devices have been compared to GFETs fabricated with Si O2 substrate and Al 2 O3 gate dielectrics. The improved performance obtained by the BN/graphene/BN structure is very promising to enable the next generation of high frequency RF electronics.

  18. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

    Science.gov (United States)

    Ravikiran, L.; Dharmarasu, N.; Radhakrishnan, K.; Agrawal, M.; Yiding, Lin; Arulkumaran, S.; Vicknesh, S.; Ng, G. I.

    2015-01-01

    To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with "Al" mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (˜1013 cm-2) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm2/V.s and a sheet carrier concentration (ns) of 0.97 × 1013 cm-2 for the DH-HEMT structure, while they are 1310 cm2/V.s and 1.09 × 1013 cm-2, respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (fT) and maximum oscillation frequency (fmax) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure.

  19. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

    International Nuclear Information System (INIS)

    Ravikiran, L.; Radhakrishnan, K.; Yiding, Lin; Ng, G. I.; Dharmarasu, N.; Agrawal, M.; Arulkumaran, S.; Vicknesh, S.

    2015-01-01

    To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10 13  cm −2 ) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm 2 /V.s and a sheet carrier concentration (n s ) of 0.97 × 10 13  cm −2 for the DH-HEMT structure, while they are 1310 cm 2 /V.s and 1.09 × 10 13  cm −2 , respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f T ) and maximum oscillation frequency (f max ) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure

  20. Voltage regulator for battery power source. [using a bipolar transistor

    Science.gov (United States)

    Black, J. M. (Inventor)

    1979-01-01

    A bipolar transistor in series with the battery as the control element also in series with a zener diode and a resistor is used to maintain a predetermined voltage until the battery voltage decays to very nearly the predetermined voltage. A field effect transistor between the base of the bipolar transistor and a junction between the zener diode and resistor regulates base current of the bipolar transistor, thereby regulating the conductivity of the bipolar transistor for control of the output voltage.

  1. Small Business Innovation Research Program at the Ballistic Missile Defense Organization

    Science.gov (United States)

    1995-03-21

    8217 ,;;::i’:’.w..:.v,:.’..’,;?.:.:. t OFFICE OF THE INSPECTOR GENERAL SMALL BUSINESS INNOVATION RESEARCH PROGRAM AT THE BALLISTIC...Ballistic Missile Defense Organization Small Business Innovation Research Accession Number: 3526 Publication Date: Mar 21, 1995 Title: Small... Business Innovation Research Program at the Ballistic Missile Defense Organization Corporate Author Or Publisher: DoD, Office of the Inspector General

  2. Determining the Equation of State (EoS) Parameters for Ballistic Gelatin

    Science.gov (United States)

    2015-09-01

    ARL-TR-7467 ● SEP 2015 US Army Research Laboratory Determining the Equation of State (EoS) Parameters for Ballistic Gelatin ...EoS) Parameters for Ballistic Gelatin by Yolin Huang Weapons and Materials Research Directorate, ARL Approved for...State (EoS) Parameters for Ballistic Gelatin 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Yolin Huang 5d

  3. Unidirectional coating technology for organic field-effect transistors: materials and methods

    Science.gov (United States)

    Sun, Huabin; Wang, Qijing; Qian, Jun; Yin, Yao; Shi, Yi; Li, Yun

    2015-05-01

    Solution-processed organic field-effect transistors (OFETs) are essential for developing organic electronics. The encouraging development in solution-processed OFETs has attracted research interest because of their potential in low-cost devices with performance comparable to polycrystalline-silicon-based transistors. In recent years, unidirectional coating technology, featuring thin-film coating along only one direction and involving specific materials as well as solution-assisted fabrication methods, has attracted intensive interest. Transistors with organic semiconductor layers, which are deposited via unidirectional coating methods, have achieved high performance. In particular, carrier mobility has been greatly enhanced to values much higher than 10 cm2 V-1 s-1. Such significant improvement is mainly attributed to better control in morphology and molecular packing arrangement of organic thin film. In this review, typical materials that are being used in OFETs are discussed, and demonstrations of unidirectional coating methods are surveyed.

  4. Thermodynamic properties of UF sub 6 measured with a ballistic piston compressor

    Science.gov (United States)

    Sterritt, D. E.; Lalos, G. T.; Schneider, R. T.

    1973-01-01

    From experiments performed with a ballistic piston compressor, certain thermodynamic properties of uranium hexafluoride were investigated. Difficulties presented by the nonideal processes encountered in ballistic compressors are discussed and a computer code BCCC (Ballistic Compressor Computer Code) is developed to analyze the experimental data. The BCCC unfolds the thermodynamic properties of uranium hexafluoride from the helium-uranium hexafluoride mixture used as the test gas in the ballistic compressor. The thermodynamic properties deduced include the specific heat at constant volume, the ratio of specific heats for UF6, and the viscous coupling constant of helium-uranium hexafluoride mixtures.

  5. Development of Mortar Simulator with Shell-In-Shell System – Problem of External Ballistics

    Directory of Open Access Journals (Sweden)

    A. Fedaravicius

    2007-01-01

    Full Text Available The shell-in-shell system used in the mortar simulator raises a number of non-standard technical and computational problems starting from the requirement to distribute the propelling blast energy between the warhead and the ballistic barrel, finishing with the requirement that the length of warhead's flight path must be scaled to combat shell firing tables. The design problem of the simulator is split into two parts – the problem of external ballistics where the initial velocities of the warhead must be determined, and the problem of internal ballistics – where the design of the cartridge and the ballistic barrel must be performed.

  6. Basic matrix algebra and transistor circuits

    CERN Document Server

    Zelinger, G

    1963-01-01

    Basic Matrix Algebra and Transistor Circuits deals with mastering the techniques of matrix algebra for application in transistors. This book attempts to unify fundamental subjects, such as matrix algebra, four-terminal network theory, transistor equivalent circuits, and pertinent design matters. Part I of this book focuses on basic matrix algebra of four-terminal networks, with descriptions of the different systems of matrices. This part also discusses both simple and complex network configurations and their associated transmission. This discussion is followed by the alternative methods of de

  7. Scaling Beyond Moore: Single Electron Transistor and Single Atom Transistor Integration on CMOS

    OpenAIRE

    Deshpande , Veeresh

    2012-01-01

    Continuous scaling of MOSFET dimensions has led us to the era of nanoelectronics. Multigate FET (MuGFET) architecture with 'nanowire channel'is being considered as one feasible enabler of MOSFET scaling to end-of-roadmap. Alongside classical CMOS or Moore's law scaling, many novel device proposals exploiting nanoscale phenomena have been made. Single Electron Transistor (SET), with its unique 'Coulomb Blockade' phenomena, and Single Atom Transistor (SAT), as an ultimately scaled transistor, a...

  8. Ballistic electron emissions microscopy (BEEM) of ferromagnet-semiconductor interfaces; Ballistische Elektronen Emissions Mikroskopie (BEEM) an Ferromagnet-Halbleitergrenzflaechen

    Energy Technology Data Exchange (ETDEWEB)

    Obernhuber, S.

    2007-04-15

    For current research on spin-transistors it is important to know the characteristics of ferromagnet semiconductor interfaces. The ballistic electron emission microscopy (BEEM) is a method to investigate such a buried interface with nanometer resolution. In this work several ferromagnet/GaAs(110) interfaces have been analysed concerning their homogeneity and mean local Schottky-barrier heights (SBH) have been determined. In Addition, the resulting integral SBH was calculated from the distribution of the local SBHs and compared with the SBH determined from voltage/current characteristics. The areas with a low SBH dominate the current conduction across the interface. Additional BEEM measurements on (AlGaAs/GaAs) heterostructures have been performed. This heterostructures consist of 50 nm AlGaAs/GaAs layers. The results of the BEEM measurements indicate, that the GaAs QWs are defined by AlGaAs barriers. The transition from AlGaAs to GaAs is done within 10 nm. (orig.)

  9. Diffusive-to-ballistic transition of the modulated heat transport in a rarefied air chamber

    Directory of Open Access Journals (Sweden)

    C. L. Gomez-Heredia

    2017-01-01

    Full Text Available Modulated heat transfer in air subject to pressures from 760 Torr to 10-4 Torr is experimentally studied by means of a thermal-wave resonant cavity placed in a vacuum chamber. This is done through the analysis of the amplitude and phase delay of the photothermal signal as a function of the cavity length and pressure through of the Knudsen’s number. The viscous, transitional, and free molecular regimes of heat transport are observed for pressures P>1.5 Torr, 25 mTorrmolecular one. Furthermore, the increase of the radiative contribution on both the amplitude and phase is also observed as the pressure reduces. The obtained results show that the proposed methodology can be used to study the molecular dynamics in gases supporting diffusive and ballistic heat transport.

  10. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@ntu.edu.sg; Yiding, Lin; Ng, G. I. [NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Dharmarasu, N.; Agrawal, M.; Arulkumaran, S.; Vicknesh, S. [Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553 (Singapore)

    2015-01-14

    To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10{sup 13 }cm{sup −2}) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm{sup 2}/V.s and a sheet carrier concentration (n{sub s}) of 0.97 × 10{sup 13 }cm{sup −2} for the DH-HEMT structure, while they are 1310 cm{sup 2}/V.s and 1.09 × 10{sup 13 }cm{sup −2}, respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f{sub T}) and maximum oscillation frequency (f{sub max}) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure.

  11. Spin gated transistors for reprogrammable logic

    Science.gov (United States)

    Ciccarelli, Chiara; Gonzalez-Zalba, Fernando; Irvine, Andrew; Campion, Richard; Zarbo, Liviu; Gallagher, Brian; Ferguson, Andrew; Jungwirth, Tomas; Wunderlich, Joerg; Institute of Physics ASCR Collaboration; University of Nottingham Collaboration; Hitachi Cambridge Laboratory Team; Institute of Physics ASCR Collaboration; University of Nottingham Collaboration; University of Cambridge Team

    2014-03-01

    In spin-orbit coupled magnetic materials the chemical potential depends on the orientation of the magnetisation. By making the gate of a field effect transistor magnetic, it is possible to tune the channel conductance not only electrically but also magnetically. We show that these magnetic transistor can be used to realise non-volatile reprogrammable Boolean logic. The non-volatile reconfigurable capability resides in the magnetization-dependent band structure of the magnetic stack. A change in magnetization orientation produces a change in the electrochemical potential, which induces a charge accumulation in the correspondent gate electrode. This is readily sensed by a field-effect device such as standard field-effect transistors or more exotic single-electron transistors. We propose circuits for low power consumption applications that can be magnetically switched between NAND and OR logic functions and between NOR and AND logic functions.

  12. Lateral power transistors in integrated circuits

    CERN Document Server

    Erlbacher, Tobias

    2014-01-01

    This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

  13. Graphene Field Effect Transistors for Radiation Detection

    Data.gov (United States)

    National Aeronautics and Space Administration — This is propose to develop Graphene Field Effect Transistor based Radiation Sensors (GFET-RS) for NASA Manned Spaceflight Missions anticipated in next several...

  14. Breakdown of transistors in Marx bank circuit

    Science.gov (United States)

    Chatterjee, Amitabh

    2000-09-01

    We reconsider the mode of operation of a Marx bank circuit and analyze the secondary breakdown of transistors with shorted emitter-base. The mechanism of breakdown of the transistor when a fast rising voltage pulse is applied across is investigated. The device exhibits chaotic behavior at the breakdown point where it can go into two possible modes of breakdown. A new explanation for the working of the circuit consistent with the experimental observations is proposed.

  15. Bipolar transistor in VESTIC technology: prototype

    Science.gov (United States)

    Mierzwiński, Piotr; Kuźmicz, Wiesław; Domański, Krzysztof; Tomaszewski, Daniel; Głuszko, Grzegorz

    2016-12-01

    VESTIC technology is an alternative for traditional CMOS technology. This paper presents first measurement data of prototypes of VES-BJT: bipolar transistors in VESTIC technology. The VES-BJT is a bipolar transistor on the SOI substrate with symmetric lateral structure and both emitter and collector made of polysilicon. The results indicate that VES-BJT can be a device with useful characteristics. Therefore, VESTIC technology has the potential to become a new BiCMOS-type technology with some unique properties.

  16. Ballistic Characterization Of A Typical Military Steel Helmet

    Directory of Open Access Journals (Sweden)

    Mohamed Ali Maher

    2017-08-01

    Full Text Available In this study the ballistic limit of a steel helmet against a FMJ 919 mm caliber bullet is estimated. The helmet model is the typical polish helmet wz.31.The helmet material showed high strength low alloy steel material of 0.28 carbon content and 9.125 kgm2 areal density. The tensile test according to ASTM E8 showed a tensile strength of 1236.4 MPa .The average hardness value was about HV550. First shooting experiment has been executed using a 9 mm pistol based on 350 ms muzzle velocity at 5m against the simply supported helmet complete penetrations rose in this test were in the form of cracks on the helmet surface and partial penetrations were in the form of craters on the surface whose largest diameter and depth were 43 mm and 20.2 mm consequently .The second experiment was on a rifled gun arrangement 13 bullets of 919 mm caliber were shot on the examined simply supported steel helmet at a zero obliquity angle at different velocities to determine the ballistic limit velocity V50 according to MIL-STD-662F. Three major outcomes were revealed 1 the value V50 which found to be about 390 ms is higher than the one found in literature 360 ms German steel helmet model 1A1. 2 The smallest the standard deviation of the mixed results zone data the most accurate the ballistic limit is. 3Similar to the performance of blunt-ended projectiles impacting overmatching targets tD near 11 or larger It was found that the dominating failure mode of the steel helmet stuck by a hemispherical-nose projectile was plugging mode despite of having tD ratio of about 19 undermatching.

  17. Ballistic performance of polyurea-coated armor grade ceramic tiles

    Science.gov (United States)

    Samiee, Ahsan; Isaacs, Jon; Nemat-Nasser, Sia

    2010-04-01

    The use of ceramics as energy absorbents has been studied by many researchers and some improvements in the ballistic performance of ceramic tiles have been made by coating them with different classes of materials (e.g. E-glass/epoxy, carbon-fiber/epoxy, etc.). Using ceramics for energy absorbing applications leads to a significant weight reduction of the system. Therefore, any modification to the ceramic configuration in the system which leads to more energy absorption with the same or less areal density is significant. On the other hand, polyurea has been proved to be an excellent energy dissipating agent in many applications. Inspired by this, we are studying the effect of coating ceramics with polyurea and other materials, on the energy absorption and ballistic performance of the resulting ceramic-based composites. In this study, we investigate the effect of polyurea on ballistic efficiency of ceramic tiles. To this end, we have performed a set of penetration tests on polyurea-ceramic composites. In our experiments, a high velocity projectile is propelled to impact and perforate the ceramic-polyurea composite. The velocity and mass of the projectile are measured before and after the penetration. The change in the kinetic energy of the projectile is evaluated and compared for different polyurea-ceramic configurations (e.g., polyurea on front face, polyurea on back face, polyurea between two ceramic tiles, etc.). The experimental results suggest that polyurea is not as effective as other restraining materials such as E-glass/epoxy and carbon-fiber/epoxy.

  18. Ballistic impact resistance of selected organic ophthalmic lenses.

    Science.gov (United States)

    Chou, B Ralph; Yuen, Gloria S-C; Dain, Stephen J

    2011-11-01

    The aim was to assess the impact resistance of coated and uncoated mid-index spectacle lens materials using the ballistic impact test. Nominally plano lenses of each material in three thicknesses were obtained. The lenses were flat edged to a 50 mm diameter. Each lens was impacted by a 6.35 mm steel ball. Impact velocities were selected using the Zippy Estimation by Sequential Testing protocol to determine the threshold fracture impact velocity. Threshold fracture impact velocity generally increased with thickness; however, there was a wide variation in performance among the various lens materials at each thickness. In all but two instances, the differences in impact velocity at each thickness of lens material were significant. Comparison of the data for CR39 and Hoya Phoenix with the results of earlier studies showed that the lens mounting is a significant factor. The fracture velocities found in the present study were significantly lower than the fracture velocities found when the lens edge is restrained in the mounting. A scratch resistant coating reduced the impact resistance of CR39. The effect of the antireflection coating on the fracture velocity depended on the nature of the base scratch-resistant coating. Mid-index lens materials of the same thickness show widely varying levels of impact resistance under the ballistic test. Impact resistance increases non-linearly with centre thickness. The lens mounting might affect the results of the ballistic impact test. The presence of 'cushion coatings' might enhance impact resistance. © 2011 The Authors. Clinical and Experimental Optometry © 2011 Optometrists Association Australia.

  19. Ndt Characterization of Boron Carbide for Ballistic Applications

    Science.gov (United States)

    Liaptsis, D.; Cooper, I.; Ludford, N.; Gunner, A.; Williams, Mike; Willis, David

    2011-06-01

    Boron Carbide (B4C) is widely used to provide ballistic protection in challenging service environments. This work was carried out to develop non-destructive testing (NDT) for B4C characterization. Deliberate flaws were introduced within the B4C tiles during manufacturing. An experimental program was undertaken to determine the best method to detect defects in ceramic tiles and material characterization. Ultrasonic characterization of the material was found to be able to detect both density variation and defects within the material.

  20. Diffusing-wave spectroscopy of cold atoms in ballistic motion

    Science.gov (United States)

    Eloy, Aurélien; Yao, Zhibin; Bachelard, Romain; Guerin, William; Fouché, Mathilde; Kaiser, Robin

    2018-01-01

    Diffusing-wave spectroscopy is a powerful technique which consists in measuring the temporal correlation function of the intensity of light multiply scattered by a medium. In this paper, we apply this technique to cold atoms under purely ballistic motion and we investigate the transition between the single and the multiple-scattering regime. The intensity correlation function changes from a simple Gaussian function, whose width reveals the sample temperature, to a more complex decay shortened by the frequency redistribution in the thick cloud. These features are quantitatively compared to simulations with a phase-coherent and an incoherent model. Both show a very good agreement with the experiments.

  1. Star-grain rocket motor - nonsteady internal ballistics

    Energy Technology Data Exchange (ETDEWEB)

    Loncaric, S.; Greatrix, D.R.; Fawaz, Z. [Ryerson University, Dept. of Aerospace Engineering, Toronto (Canada)

    2004-01-01

    The nonsteady internal ballistics of a star-grain solid-propellant rocket motor are investigated through a numerical simulation model that incorporates both the internal flow and surrounding structure. The effects of structural vibration on burning rate augmentation and wave development in nonsteady operation are demonstrated. The amount of damping plays a role in influencing the predicted axial combustion instability symptoms of the motor. The variation in oscillation frequencies about a given star grain section periphery, and along the grain with different levels of burn-back, also influences the means by which the local acceleration drives the combustion and flow behaviour. (authors)

  2. Thermodynamic Bounds on Precision in Ballistic Multiterminal Transport

    Science.gov (United States)

    Brandner, Kay; Hanazato, Taro; Saito, Keiji

    2018-03-01

    For classical ballistic transport in a multiterminal geometry, we derive a universal trade-off relation between total dissipation and the precision, at which particles are extracted from individual reservoirs. Remarkably, this bound becomes significantly weaker in the presence of a magnetic field breaking time-reversal symmetry. By working out an explicit model for chiral transport enforced by a strong magnetic field, we show that our bounds are tight. Beyond the classical regime, we find that, in quantum systems far from equilibrium, the correlated exchange of particles makes it possible to exponentially reduce the thermodynamic cost of precision.

  3. Quantum transport through ballistic chaotic cavities: a statistical approach

    International Nuclear Information System (INIS)

    Mello, P.A.

    1998-01-01

    The problem of quantum chaotic scattering is addressed by means of a statistical model for the scattering matrix. The model, introduced in the past in the context of nuclear physics, describes the problem in terms of a prompt and an equilibrated component: it incorporates the average value of the scattering matrix to describe the prompt processes and satisfies the requirements of flux conservation, causality and ergodicity. The model is applied to the analysis of electronic transport through ballistic mesoscopic cavities: it describes well the results arising form the numerical solution of the Schroedinger equation for two-dimensional cavities. (Author)

  4. Ballistic Characterization Of A Typical Military Steel Helmet

    OpenAIRE

    Mohamed Ali Maher; Dr. Osama Mounir Dawood; Dr. Nabil El Houseiny Awad; Mahmoud Mohamed Younes

    2017-01-01

    In this study the ballistic limit of a steel helmet against a FMJ 919 mm caliber bullet is estimated. The helmet model is the typical polish helmet wz.31.The helmet material showed high strength low alloy steel material of 0.28 carbon content and 9.125 kgm2 areal density. The tensile test according to ASTM E8 showed a tensile strength of 1236.4 MPa .The average hardness value was about HV550. First shooting experiment has been executed using a 9 mm pistol based on 350 ms muzzle velocity at 5m...

  5. Temas de Física para Ingeniería: El transistor de unión

    OpenAIRE

    Beléndez Vázquez, Augusto; Pastor Antón, Carlos; Martín García, Agapito

    1990-01-01

    El transistor de unión bipolar. Tensiones y corrientes en el transistor. El transistor como amplificador. El transistor como conmutador. Transistores unipolares o de efecto de campo. El tiristor. Microelectrónica y circuitos integrados.

  6. From transistor to trapped-ion computers for quantum chemistry.

    Science.gov (United States)

    Yung, M-H; Casanova, J; Mezzacapo, A; McClean, J; Lamata, L; Aspuru-Guzik, A; Solano, E

    2014-01-07

    Over the last few decades, quantum chemistry has progressed through the development of computational methods based on modern digital computers. However, these methods can hardly fulfill the exponentially-growing resource requirements when applied to large quantum systems. As pointed out by Feynman, this restriction is intrinsic to all computational models based on classical physics. Recently, the rapid advancement of trapped-ion technologies has opened new possibilities for quantum control and quantum simulations. Here, we present an efficient toolkit that exploits both the internal and motional degrees of freedom of trapped ions for solving problems in quantum chemistry, including molecular electronic structure, molecular dynamics, and vibronic coupling. We focus on applications that go beyond the capacity of classical computers, but may be realizable on state-of-the-art trapped-ion systems. These results allow us to envision a new paradigm of quantum chemistry that shifts from the current transistor to a near-future trapped-ion-based technology.

  7. Unjuk Kerja Catu Daya 12 Volt 2a Dengan Pass Element Transistor Npn Dan Pnp

    OpenAIRE

    Fathoni, Fathoni

    2010-01-01

    Transistor pelewat (pass element transistor) yang dipasang pada rangkain catu daya yang menggunakan IC regulator 3 terminal adalah untuk booster arus output. Ada dua cara pemasangan transistor pelewat yang umum digunakan, yaitu dengan transistor pnp dan npn. Transistor pnp dipasang dengan basis transistor yang terhubung pada input IC regulator sedangkan transistor npn dipasang dengan basis transistor yang terhubung pada output IC regulator.Untuk mengetahui unjuk kerja dari kedua ...

  8. Results of a Round Robin ballistic load sensing headform test series

    NARCIS (Netherlands)

    Philippens, M.A.G.; Anctil, B.; Markwardt, K.C.

    2014-01-01

    The majority of methods to assess the behind armour blunt trauma (BABT) risk for ballistic helmets is based on plastic deformable headforms. An alternative, the Ballistic Load Sensing Headform (BLSH) can record the dynamic contact force between helmet back face and the skull. Helmet BABT methods are

  9. 75 FR 78268 - Draft NIJ Selection and Application Guide to Ballistic-Resistant Body Armor for Law Enforcement...

    Science.gov (United States)

    2010-12-15

    ... of Justice Programs Draft NIJ Selection and Application Guide to Ballistic-Resistant Body Armor for... of Draft NIJ Selection and Application Guide to Ballistic-Resistant Body Armor for Law Enforcement... the general public the draft ``NIJ Selection and Application Guide to Ballistic-Resistant Body Armor...

  10. Civilian casualties of Iraqi ballistic missile attack to

    Directory of Open Access Journals (Sweden)

    Khaji Ali

    2012-06-01

    Full Text Available 【Abstract】Objective: To determine the pattern of causalities of Iraqi ballistic missile attacks on Tehran, the capital of Iran, during Iraq-Iran war. Methods: Data were extracted from the Army Staff Headquarters based on daily reports of Iranian army units during the war. Results: During 52 days, Tehran was stroked by 118 Al-Hussein missiles (a modified version of Scud missile. Eighty-six missiles landed in populated areas. During Iraqi missile attacks, 422 civilians died and 1 579 injured (4.9 deaths and 18.3 injuries per missile. During 52 days, 8.1 of the civilians died and 30.4 injured daily. Of the cases that died, 101 persons (24% were excluded due to the lack of information. Among the remainders, 179 (55.8% were male and 142 (44.2% were female. The mean age of the victims was 25.3 years±19.9 years. Our results show that the high accuracy of modified Scud missiles landed in crowded ar-eas is the major cause of high mortality in Tehran. The pres-ence of suitable warning system and shelters could reduce civilian casualties. Conclusion: The awareness and readiness of civilian defense forces, rescue services and all medical facilities for dealing with mass casualties caused by ballistic missile at-tacks are necessary. Key words: Mortality; War; Mass casualty incidents; Wounds and injuries

  11. Clinical aspects of ballistic peripheral nerve injury: shrapnel versus gunshot.

    Science.gov (United States)

    Rochkind, Shimon; Strauss, Ido; Shlitner, Zvi; Alon, Malvina; Reider, Evgeny; Graif, Moshe

    2014-08-01

    Ballistic injuries to peripheral nerves pose special challenges in terms of indications, timing and type of surgical intervention. The aim of the present work was to analyze our experience in the surgical treatment of peripheral nerve ballistic injuries with respect to the mechanism of injury (gunshot versus shrapnel), and identify common and dissimilar prognostic factors in both types of injury. This study was conducted on 42 patients totaling 58 nerves. Twenty-two patients (32 nerves) were injured by gunshot and 20 patients (26 nerves) by shrapnel. Median postoperative follow-up was 33 months (range 12 months to 14 years). Overall postoperative outcome appears to be more favorable for gunshot-wound (GSW) patients than shrapnel-injured patients, especially in terms of neuropathic pain relief (75 % vs. 58 % respectively, p Nerve graft reconstruction, rather than neurolysis, seems to be the more beneficial treatment for shrapnel-induced neuropathic pain (100 % vs. 47 % in improvement rate, respectively). Early surgical intervention (median 2 months after injury) significantly relieved neuropathic pain in 83 % of shrapnel-injured patients compared to 58 % in patients operated later. This study suggests that shrapnel injury is more destructive for nerve tissue than gunshot injury. Our impression is that early surgical intervention in shrapnel injuries and split nerve grafting (especially when small fragments are recognized in the nerve) significantly improve the patient's functional activity and quality of life.

  12. The proliferation of ballistic missiles: an aggravating factor of crises

    International Nuclear Information System (INIS)

    Rousset, Valery

    2015-01-01

    After a brief recall of the history of the development of ballistic missiles from World War II, the author discusses the various uses of these missiles, on the one hand by major powers, and on the other hand by other countries like Israel, Pakistan and India, and also Egypt and Iraq. He recalls the uses of these missiles during regional conflicts (Scuds by Iraq) and then discusses the issue of proliferation of ballistic missiles. He notices that most of these weapons are present in the arsenal of major powers under the form of intercontinental missiles, intermediate range weapons or theatre weapons. On the Third World side, proliferation concerns short- and medium-range missiles produced from technology transfers or national programmes. Mobile systems are now present in all conflicts (notably Libya, Syria) and are now based on more advanced technologies for propellers as well as for control and guidance systems. In the last part, the author discusses the perspectives associated with these missiles which are a strong offensive weapon, and are also modernised to carry nuclear warheads or multiple warheads. These evolutions could put the western superiority into question again

  13. Jig protects transistors from heat while tinning leads

    Science.gov (United States)

    Pelletier, A. J.; Willis, G. A.

    1966-01-01

    In tinning transistor leads, an aluminum jig is used to dip the leads into the molten tin. The jigs mass shunts excess heat given off by the molten tin before it reaches and damages the transistor body.

  14. Ambipolar phosphorene field effect transistor.

    Science.gov (United States)

    Das, Saptarshi; Demarteau, Marcel; Roelofs, Andreas

    2014-11-25

    In this article, we demonstrate enhanced electron and hole transport in few-layer phosphorene field effect transistors (FETs) using titanium as the source/drain contact electrode and 20 nm SiO2 as the back gate dielectric. The field effect mobility values were extracted to be ∼38 cm(2)/Vs for electrons and ∼172 cm(2)/Vs for the holes. On the basis of our experimental data, we also comprehensively discuss how the contact resistances arising due to the Schottky barriers at the source and the drain end effect the different regime of the device characteristics and ultimately limit the ON state performance. We also propose and implement a novel technique for extracting the transport gap as well as the Schottky barrier height at the metal-phosphorene contact interface from the ambipolar transfer characteristics of the phosphorene FETs. This robust technique is applicable to any ultrathin body semiconductor which demonstrates symmetric ambipolar conduction. Finally, we demonstrate a high gain, high noise margin, chemical doping free, and fully complementary logic inverter based on ambipolar phosphorene FETs.

  15. Organic tunnel field effect transistors

    KAUST Repository

    Tietze, Max Lutz

    2017-06-29

    Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer; source (or drain) contact stacks disposed on portions of the first i-layer; a second i-layer of organic semiconductor material disposed on the first i-layer surrounding the source (or drain) contact stacks; an n-doped organic semiconductor layer disposed on the second i-layer; and a drain (or source) contact layer disposed on the n-doped organic semiconductor layer. The source (or drain) contact stacks can include a p-doped injection layer, a source (or drain) contact layer, and a contact insulating layer. In another example, a method includes disposing a first i-layer over a gate insulating layer; forming source or drain contact stacks; and disposing a second i-layer, an n-doped organic semiconductor layer, and a drain or source contact.

  16. Hafnium transistor design for neural interfacing.

    Science.gov (United States)

    Parent, David W; Basham, Eric J

    2008-01-01

    A design methodology is presented that uses the EKV model and the g(m)/I(D) biasing technique to design hafnium oxide field effect transistors that are suitable for neural recording circuitry. The DC gain of a common source amplifier is correlated to the structural properties of a Field Effect Transistor (FET) and a Metal Insulator Semiconductor (MIS) capacitor. This approach allows a transistor designer to use a design flow that starts with simple and intuitive 1-D equations for gain that can be verified in 1-D MIS capacitor TCAD simulations, before final TCAD process verification of transistor properties. The DC gain of a common source amplifier is optimized by using fast 1-D simulations and using slower, complex 2-D simulations only for verification. The 1-D equations are used to show that the increased dielectric constant of hafnium oxide allows a higher DC gain for a given oxide thickness. An additional benefit is that the MIS capacitor can be employed to test additional performance parameters important to an open gate transistor such as dielectric stability and ionic penetration.

  17. Polyphosphonium-based ion bipolar junction transistors.

    Science.gov (United States)

    Gabrielsson, Erik O; Tybrandt, Klas; Berggren, Magnus

    2014-11-01

    Advancements in the field of electronics during the past few decades have inspired the use of transistors in a diversity of research fields, including biology and medicine. However, signals in living organisms are not only carried by electrons but also through fluxes of ions and biomolecules. Thus, in order to implement the transistor functionality to control biological signals, devices that can modulate currents of ions and biomolecules, i.e., ionic transistors and diodes, are needed. One successful approach for modulation of ionic currents is to use oppositely charged ion-selective membranes to form so called ion bipolar junction transistors (IBJTs). Unfortunately, overall IBJT device performance has been hindered due to the typical low mobility of ions, large geometries of the ion bipolar junction materials, and the possibility of electric field enhanced (EFE) water dissociation in the junction. Here, we introduce a novel polyphosphonium-based anion-selective material into npn-type IBJTs. The new material does not show EFE water dissociation and therefore allows for a reduction of junction length down to 2 μm, which significantly improves the switching performance of the ion transistor to 2 s. The presented improvement in speed as well the simplified design will be useful for future development of advanced iontronic circuits employing IBJTs, for example, addressable drug-delivery devices.

  18. High Accuracy Transistor Compact Model Calibrations

    Energy Technology Data Exchange (ETDEWEB)

    Hembree, Charles E. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Mar, Alan [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Robertson, Perry J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

    2015-09-01

    Typically, transistors are modeled by the application of calibrated nominal and range models. These models consists of differing parameter values that describe the location and the upper and lower limits of a distribution of some transistor characteristic such as current capacity. Correspond- ingly, when using this approach, high degrees of accuracy of the transistor models are not expected since the set of models is a surrogate for a statistical description of the devices. The use of these types of models describes expected performances considering the extremes of process or transistor deviations. In contrast, circuits that have very stringent accuracy requirements require modeling techniques with higher accuracy. Since these accurate models have low error in transistor descriptions, these models can be used to describe part to part variations as well as an accurate description of a single circuit instance. Thus, models that meet these stipulations also enable the calculation of quantifi- cation of margins with respect to a functional threshold and uncertainties in these margins. Given this need, new model high accuracy calibration techniques for bipolar junction transis- tors have been developed and are described in this report.

  19. Discrete transistor measuring and matching using a solid core oven.

    Science.gov (United States)

    Inkinen, M; Mäkelä, K; Vuorela, T; Palovuori, K

    2013-03-01

    This paper presents transistor measurements done at a constant temperature. The aim in this research was to develop a reliable and repeatable method for measuring and searching transistor pairs with similar parameters, as in certain applications it is advantageous to use transistors from the same production batch due to the significant variability in batches from different manufacturers. Transistor manufacturing methods are well established, but due to the large variability in tolerance, not even transistors from the same manufacturing batch have identical properties. Transistors' electrical properties are also strongly temperature-dependent. Therefore, when measuring transistor properties, the temperature must be kept constant. For the measurement process, a solid-core oven providing stable temperature was implemented. In the oven, the base-to-emitter voltage (VBE) and DC-current gain (β) of 32 transistors could be measured simultaneously. The oven's temperature was controlled with a programmable thermostat, which allowed accurate constant temperature operation. The oven is formed by a large metal block with an individual chamber for each transistor to be measured. Isolation of individual transistors and the highly thermally conductive metal core structure prevent thermal coupling between transistors. The oven enables repeatable measurements, and thus measurements between different batches are comparable. In this research study, the properties of over 5000 transistors were measured and the variance of the aforementioned properties was analyzed.

  20. Bipolar-FET combinational power transistors for power conversion applications

    Science.gov (United States)

    Chen, D. Y.; Chin, S. A.

    1984-01-01

    Four bipolar-FET (field-effect transistor) combinational transistor configurations are compared from the application point of view. The configurations included are FET-Darlington (cascade), emitter-open switch (cascode), parallel configuration, and FET-gated bipolar transistors (FGT).

  1. Stretchable transistors with buckled carbon nanotube films as conducting channels

    Science.gov (United States)

    Arnold, Michael S; Xu, Feng

    2015-03-24

    Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.

  2. The boost transistor: a field plate controlled LDMOST

    NARCIS (Netherlands)

    Ferrara, A.; Schmitz, Jurriaan; Boksteen, B.K.; Hueting, Raymond Josephus Engelbart; Steeneken, P.G.; Heringa, A.; Claes, J.; van der Wel, A.P.

    2015-01-01

    In this work we present a new device: the boost transistor. The boost transistor is an LDMOS transistor that is controlled by a separate field plate boost electrode that reduces the specific on-resistance RonA. By applying a positive voltage Vboost, this electrode creates an accumulation layer in

  3. Adaptations in athletic performance after ballistic power versus strength training.

    Science.gov (United States)

    Cormie, Prue; McGuigan, Michael R; Newton, Robert U

    2010-08-01

    To determine whether the magnitude of improvement in athletic performance and the mechanisms driving these adaptations differ in relatively weak individuals exposed to either ballistic power training or heavy strength training. Relatively weak men (n = 24) who could perform the back squat with proficient technique were randomized into three groups: strength training (n = 8; ST), power training (n = 8; PT), or control (n = 8). Training involved three sessions per week for 10 wk in which subjects performed back squats with 75%-90% of one-repetition maximum (1RM; ST) or maximal-effort jump squats with 0%-30% 1RM (PT). Jump and sprint performances were assessed as well as measures of the force-velocity relationship, jumping mechanics, muscle architecture, and neural drive. Both experimental groups showed significant (P < or = 0.05) improvements in jump and sprint performances after training with no significant between-group differences evident in either jump (peak power: ST = 17.7% +/- 9.3%, PT = 17.6% +/- 4.5%) or sprint performance (40-m sprint: ST = 2.2% +/- 1.9%, PT = 3.6% +/- 2.3%). ST also displayed a significant increase in maximal strength that was significantly greater than the PT group (squat 1RM: ST = 31.2% +/- 11.3%, PT = 4.5% +/- 7.1%). The mechanisms driving these improvements included significant (P < or = 0.05) changes in the force-velocity relationship, jump mechanics, muscle architecture, and neural activation that showed a degree of specificity to the different training stimuli. Improvements in athletic performance were similar in relatively weak individuals exposed to either ballistic power training or heavy strength training for 10 wk. These performance improvements were mediated through neuromuscular adaptations specific to the training stimulus. The ability of strength training to render similar short-term improvements in athletic performance as ballistic power training, coupled with the potential long-term benefits of improved maximal strength

  4. Assessment and monitoring of ballistic and maximal upper-body strength qualities in athletes.

    Science.gov (United States)

    Young, Kieran P; Haff, G Gregory; Newton, Robert U; Gabbett, Tim J; Sheppard, Jeremy M

    2015-03-01

    To evaluate whether the dynamic strength index (DSI: ballistic peak force/isometric peak force) could be effectively used to guide specific training interventions and detect training-induced changes in maximal and ballistic strength. Twenty-four elite male athletes were assessed in the isometric bench press and a 45% 1-repetition-maximum (1RM) ballistic bench throw using a force plate and linear position transducer. The DSI was calculated using the peak force values obtained during the ballistic bench throw and isometric bench press. Athletes were then allocated into 2 groups as matched pairs based on their DSI and strength in the 1RM bench press. Over the 5 wk of training, athletes performed either high-load (80-100% 1RM) bench press or moderate-load (40-55% 1RM) ballistic bench throws. The DSI was sensitive to disparate training methods, with the bench-press group increasing isometric bench-press peak force (P=.035, 91% likely), and the ballistic-bench-throw group increasing bench-throw peak force to a greater extent (P≤.001, 83% likely). A significant increase (P≤.001, 93% likely) in the DSI was observed for both groups. The DSI can be used to guide specific training interventions and can detect training-induced changes in isometric bench-press and ballistic bench-throw peak force over periods as short as 5 wk.

  5. Fundamentals of nanoscaled field effect transistors

    CERN Document Server

    Chaudhry, Amit

    2013-01-01

    Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics.

  6. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

    International Nuclear Information System (INIS)

    Deen, David A.; Storm, David F.; Meyer, David J.; Bass, Robert; Binari, Steven C.; Gougousi, Theodosia; Evans, Keith R.

    2014-01-01

    A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm 2 /V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.

  7. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Meyer, David J.; Bass, Robert; Binari, Steven C. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375-5347 (United States); Gougousi, Theodosia [Physics Department, University of Maryland Baltimore County, Baltimore, Maryland 21250 (United States); Evans, Keith R. [Kyma Technologies, Raleigh, North Carolina 27617 (United States)

    2014-09-01

    A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm{sup 2}/V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.

  8. EDITORIAL: Reigniting innovation in the transistor Reigniting innovation in the transistor

    Science.gov (United States)

    Demming, Anna

    2012-09-01

    Today the transistor is integral to the electronic circuitry that wires our lives. When Bardeen and Brattain first observed an amplified signal by connecting electrodes to a germanium crystal they saw that their 'semiconductor triode' could prove a useful alternative to the more cumbersome vacuum tubes used at the time [1]. But it was perhaps William Schottky who recognized the extent of the transistor's potential. A basic transistor has three or more terminals and current across one pair of terminals can switch or amplify current through another pair. Bardeen, Brattain and Schottky were jointly awarded a Nobel Prize in 1956 'for their researches on semiconductors and their discovery of the transistor effect' [2]. Since then many new forms of the transistor have been developed and understanding of the underlying properties is constantly advancing. In this issue Chen and Shih and colleagues at Taiwan National University and Drexel University report a pyroelectrics transistor. They show how a novel optothermal gating mechanism can modulate the current, allowing a range of developments in nanoscale optoelectronics and wireless devices [3]. The explosion of interest in nanoscale devices in the 1990s inspired electronics researchers to look for new systems that can act as transistors, such as carbon nanotube [4] and silicon nanowire [5] transistors. Generally these transistors function by raising and lowering an energy barrier of kBT -1, but researchers in the US and Canada have demonstrated that the quantum interference between two electronic pathways through aromatic molecules can also modulate the current flow [6]. The device has advantages for further miniaturization where energy dissipation in conventional systems may eventually cause complications. Interest in transistor technology has also led to advances in fabrication techniques for achieving high production quantities, such as printing [7]. Researchers in Florida in the US demonstrated field effect transistor

  9. Transistor Small Signal Analysis under Radiation Effects

    International Nuclear Information System (INIS)

    Sharshar, K.A.A.

    2004-01-01

    A Small signal transistor parameters dedicate the operation of bipolar transistor before and after exposed to gamma radiation (1 Mrad up to 5 Mrads) and electron beam(1 MeV, 25 mA) with the same doses as a radiation sources, the electrical parameters of the device are changed. The circuit Model has been discussed.Parameters, such as internal emitter resistance (re), internal base resistance, internal collector resistance (re), emitter base photocurrent (Ippe) and base collector photocurrent (Ippe). These parameters affect on the operation of the device in its applications, which work as an effective element, such as current gain (hFE≡β)degradation it's and effective parameter in the device operation. Also the leakage currents (IcBO) and (IEBO) are most important parameters, Which increased with radiation doses. Theoretical representation of the change in the equivalent circuit for NPN and PNP bipolar transistor were discussed, the input and output parameters of the two types were discussed due to the change in small signal input resistance of the two types. The emitter resistance(re) were changed by the effect of gamma and electron beam irradiation, which makes a change in the role of matching impedances between transistor stages. Also the transistor stability factors S(Ico), S(VBE) and S(β are detected to indicate the transistor operations after exposed to radiation fields. In low doses the gain stability is modified due to recombination of induced charge generated during device fabrication. Also the load resistance values are connected to compensate the effect

  10. A School Experiment in Kinematics: Shooting from a Ballistic Cart

    Science.gov (United States)

    Kranjc, T.; Razpet, N.

    2011-10-01

    Many physics textbooks start with kinematics. In the lab, students observe the motions, describe and make predictions, and get acquainted with basic kinematics quantities and their meaning. Then they can perform calculations and compare the results with experimental findings. In this paper we describe an experiment that is not often done, but is interesting and attractive to students—the ballistic cart, i.e., the shooting of a ball from a cart moving along a slope. For that, one has to be familiar with one-dimensional uniform motion and one-dimensional motion with constant acceleration, as well as curvilinear motion that is a combination of such motions.1,2 The experimental results confirm theoretical predictions.

  11. Interference in ballistic motor learning - is motor interference really sensory?

    DEFF Research Database (Denmark)

    Lundbye-Jensen, Jesper; Petersen, Tue Hvass; Rothwell, John C

    Skill gained after a short period of practice in one motor task can be abolished if a second task is learned shortly afterwards. We hypothesised that interference requires the same circuits to be engaged in the two tasks and provoke competing processes of synaptic plasticity. To test this, subjects...... learned a ballistic ankle plantarflexion task. Interference was observed following subsequent learning of a precision tracking task with the same movement direction and agonist muscles, but not by learning involving the opposite movement and antagonist muscles or by voluntary agonist contractions that did...... not require learning. Repeated transcranial magnetic stimulation (rTMS) of corticospinal motor output at intensities below ankle movement threshold did not cause interference, whereas suprathreshold rTMS did. Furthermore, electrical stimulation of the peripheral nerve to the plantarflexors (but not extensors...

  12. Lateral and Vertical Organic Transistors

    Science.gov (United States)

    Al-Shadeedi, Akram

    An extensive study has been performed to provide a better understanding of the operation principles of doped organic field-effect transistors (OFETs), organic p-i-n diodes, Schottky diodes, and organic permeable base transistors (OPBTs). This has been accomplished by a combination of electrical and structural characterization of these devices. The discussion of doped OFETs focuses on the shift of the threshold voltage due to increased doping concentrations and the generation and transport of minority charge carriers. Doping of pentacene OFETs is achieved by co-evaporation of pentacene with the n-dopant W2(hpp)4. It is found that pentacene thin film are efficiently doped and that a conductivity in the range of 2.6 x 10-6 S cm-1 for 1 wt% to 2.5 x 10-4 S cm-1 for 16 wt% is reached. It is shown that n-doped OFET consisting of an n-doped channel and n-doped contacts are ambipolar. This behavior is surprising, as n-doping the contacts should suppress direct injection of minority charge carriers (holes). It was proposed that minority charge carrier injection and hence the ambipolar characteristic of n-doped OFETs can be explained by Zener tunneling inside the intrinsic pentacene layer underneath the drain electrode. It is shown that the electric field in this layer is indeed in the range of the breakdown field of pentacene based p-i-n Zener homodiodes. Doping the channel has a profound influence on the onset voltage of minority (hole) conduction. The onset voltage can be shifted by lightly n-doping the channel. The shift of onset voltage can be explained by two mechanisms: first, due to a larger voltage that has to be applied to the gate in order to fully deplete the n-doped layer. Second, it can be attributed to an increase in hole trapping by inactive dopants. Moreover, it has been shown that the threshold voltage of majority (electron) conduction is shifted by an increase in the doping concentration, and that the ambipolar OFETs can be turned into unipolar OFETs at

  13. Influence of Material Properties on the Ballistic Performance of Ceramics for Personal Body Armour

    Directory of Open Access Journals (Sweden)

    Christian Kaufmann

    2003-01-01

    Full Text Available In support of improved personal armour development, depth of penetration tests have been conducted on four different ceramic materials including alumina, modified alumina, silicon carbide and boron carbide. These experiments consisted of impacting ceramic tiles bonded to aluminum cylinders with 0.50 caliber armour piercing projectiles. The results are presented in terms of ballistic efficiency, and the validity of using ballistic efficiency as a measure of ceramic performance was examined. In addition, the correlation between ballistic performance and ceramic material properties, such as elastic modulus, hardness, spall strength and Hugoniot Elastic Limit, has been considered.

  14. Historical Review of the Correlation of Ballistic and Metallurgical Characteristics of Domestic Armor at Watertown Arsenal

    Science.gov (United States)

    1945-12-07

    by the early part of 1942, and since the beginning of 1943 fracture tests for steel soundness and fiber and V-notch Charpy tests were also employed...prior to ballistic testing . Later, for armor 6" and thicker, non-ballistic tests (hardness and V-notch Charpy ) were substituted for ballistics. Today it...conclusions were drawn: "Shock failures in 1-112" and 2" armor, subjected to the slug test , are largely attributable to either poor steel quality, low

  15. Theoretical Study on Adhesives Used in Ballistic Protection Structures and Transparent Armor

    Directory of Open Access Journals (Sweden)

    Alil Luminiţa-Cristina

    2015-06-01

    Full Text Available This article is a brief study conducted on adhesives currently used for manufacturing performance ballistic protection structures. The study landmarks several aspects, such as: types of connections available to achieve multilayer structures based on ceramics, metals and polymers; ways in which adhesives influence the ballistic performance of protective structures; analysis of various types of adhesives used in ballistic protection industry; general considerations in the selection of adhesives for certain types of armor and protective structures; considerations for characterizing, testing and modeling adhesives.

  16. Ballistic Resistance of Armored Passenger Vehicles: Test Protocols and Quality Methods

    Energy Technology Data Exchange (ETDEWEB)

    Jeffrey M. Lacy; Robert E. Polk

    2005-07-01

    This guide establishes a test methodology for determining the overall ballistic resistance of the passenger compartment of assembled nontactical armored passenger vehicles (APVs). Because ballistic testing of every piece of every component of an armored vehicle is impractical, if not impossible, this guide describes a testing scheme based on statistical sampling of exposed component surface areas. Results from the test of the sampled points are combined to form a test score that reflects the probability of ballistic penetration into the passenger compartment of the vehicle.

  17. Static Characteristics of the Ferroelectric Transistor Inverter

    Science.gov (United States)

    Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

  18. Fundamentals of RF and microwave transistor amplifiers

    CERN Document Server

    Bahl, Inder J

    2009-01-01

    A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read

  19. Switching Characteristics of Ferroelectric Transistor Inverters

    Science.gov (United States)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  20. Total Dose Effects in Conventional Bipolar Transistors

    Science.gov (United States)

    Johnston, A. H.; Swift, G. W.; Rax, B. G.

    1994-01-01

    This paper examines various factors in bipolar device construction and design, and discusses their impact on radiation hardness. The intent of the paper is to improve understanding of the underlying mechanisms for practical devices without special test structures, and to provide (1) guidance in ways to select transistor designs that are more resistant to radiation damage, and (2) methods to estimate the maximum amount of damage that might be expected from a basic transistor design. The latter factor is extremely important in assessing the risk that future lots of devices will be substantially below design limits, which are usually based on test data for older devices.

  1. Graphene Field Effect Transistor for Radiation Detection

    Science.gov (United States)

    Li, Mary J. (Inventor); Chen, Zhihong (Inventor)

    2016-01-01

    The present invention relates to a graphene field effect transistor-based radiation sensor for use in a variety of radiation detection applications, including manned spaceflight missions. The sensing mechanism of the radiation sensor is based on the high sensitivity of graphene in the local change of electric field that can result from the interaction of ionizing radiation with a gated undoped silicon absorber serving as the supporting substrate in the graphene field effect transistor. The radiation sensor has low power and high sensitivity, a flexible structure, and a wide temperature range, and can be used in a variety of applications, particularly in space missions for human exploration.

  2. VHDL simulation with access to transistor models

    Science.gov (United States)

    Gibson, J.

    1991-01-01

    Hardware description languages such as VHDL have evolved to aid in the design of systems with large numbers of elements and a wide range of electronic and logical abstractions. For high performance circuits, behavioral models may not be able to efficiently include enough detail to give designers confidence in a simulation's accuracy. One option is to provide a link between the VHDL environment and a transistor level simulation environment. The coupling of the Vantage Analysis Systems VHDL simulator and the NOVA simulator provides the combination of VHDL modeling and transistor modeling.

  3. Dielectric Engineered Tunnel Field-Effect Transistor

    OpenAIRE

    Ilatikhameneh, Hesameddin; Ameen, Tarek A.; Klimeck, Gerhard; Appenzeller, Joerg; Rahman, Rajib

    2015-01-01

    The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result a record ON-current of about 1000 uA/um and a subthreshold swing (SS) below 20mV/dec are predicted for WTe2 DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface stat...

  4. Constructing Diodes and Transistors for Ultracold Atoms

    Science.gov (United States)

    Pepino, Ronald; Cooper, John; Anderson, Dana; Holland, Murray

    2008-05-01

    The ultracold atom-optical analogy to electronic systems is presented, along with the master equation formalism that is applied to this novel physical context of system-reservoir interactions. The proposed formalism lends itself quite readily to not only the study of atomtronic systems, but also transport properties of ultracold atoms in optical lattices. We demonstrate how these systems can be configured so that they emulate the behavior of the electronic diode, field effect transistor (FET), and bipolar junction transistor (BJT). The behavior of simple logic gates: namely, the AND and OR gates are follow as direct consequences of the atomtronic BJTs.

  5. In-flight dynamics of volcanic ballistic projectiles

    Science.gov (United States)

    Taddeucci, J.; Alatorre-Ibargüengoitia, M. A.; Cruz-Vázquez, O.; Del Bello, E.; Scarlato, P.; Ricci, T.

    2017-09-01

    Centimeter to meter-sized volcanic ballistic projectiles from explosive eruptions jeopardize people and properties kilometers from the volcano, but they also provide information about the past eruptions. Traditionally, projectile trajectory is modeled using simplified ballistic theory, accounting for gravity and drag forces only and assuming simply shaped projectiles free moving through air. Recently, collisions between projectiles and interactions with plumes are starting to be considered. Besides theory, experimental studies and field mapping have so far dominated volcanic projectile research, with only limited observations. High-speed, high-definition imaging now offers a new spatial and temporal scale of observation that we use to illuminate projectile dynamics. In-flight collisions commonly affect the size, shape, trajectory, and rotation of projectiles according to both projectile nature (ductile bomb versus brittle block) and the location and timing of collisions. These, in turn, are controlled by ejection pulses occurring at the vent. In-flight tearing and fragmentation characterize large bombs, which often break on landing, both factors concurring to decrease the average grain size of the resulting deposits. Complex rotation and spinning are ubiquitous features of projectiles, and the related Magnus effect may deviate projectile trajectory by tens of degrees. A new relationship is derived, linking projectile velocity and size with the size of the resulting impact crater. Finally, apparent drag coefficient values, obtained for selected projectiles, mostly range from 1 to 7, higher than expected, reflecting complex projectile dynamics. These new perspectives will impact projectile hazard mitigation and the interpretation of projectile deposits from past eruptions, both on Earth and on other planets.

  6. Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

    Science.gov (United States)

    Kim, SungGeun; Luisier, Mathieu; Boykin, Timothy B.; Klimeck, Gerhard

    2014-06-01

    The graphene nanoribbon (GNR) tunneling field effect transistor (TFET) has been a promising candidate for a future low power logic device due to its sub-60 mV/dec subthreshold characteristic and its superior gate control on the channel electrons due to its one-dimensional nature. Even though many theoretical studies have been carried out, it is not clear that GNR TFETs would outperform conventional silicon metal oxide semiconductor field effect transistors (MOSFETs). With rigorous atomistic simulations using the p/d orbital tight-binding model, this study focuses on the optimization of GNR TFETs by tuning the doping density and the size of GNRs. It is found that the optimized GNR TFET can operate at a half of the supply voltage of silicon nanowire MOSFETs in the ballistic limit. However, a study on the effects of edge roughness on the performance of the optimized GNR TFET structure reveals that experimentally feasible edge roughness can deteriorates the on-current performance if the off-current is normalized with the low power requirement specified in the international technology roadmap for semiconductors.

  7. Gas Sensors Based on Polymer Field-Effect Transistors

    Directory of Open Access Journals (Sweden)

    Aifeng Lv

    2017-01-01

    Full Text Available This review focuses on polymer field-effect transistor (PFET based gas sensor with polymer as the sensing layer, which interacts with gas analyte and thus induces the change of source-drain current (ΔISD. Dependent on the sensing layer which can be semiconducting polymer, dielectric layer or conducting polymer gate, the PFET sensors can be subdivided into three types. For each type of sensor, we present the molecular structure of sensing polymer, the gas analyte and the sensing performance. Most importantly, we summarize various analyte–polymer interactions, which help to understand the sensing mechanism in the PFET sensors and can provide possible approaches for the sensor fabrication in the future.

  8. Touching polymer chains by organic field-effect transistors.

    Science.gov (United States)

    Shao, Wei; Dong, Huanli; Wang, Zhigang; Hu, Wenping

    2014-09-17

    Organic field-effect transistors (OFETs) are used to directly "touch" the movement and dynamics of polymer chains, and then determine Tg. As a molecular-level probe, the conducting channel of OFETs exhibits several unique advantages: 1) it directly detects the motion and dynamics of polymer chain at Tg; 2) it allows the measurement of size effects in ultrathin polymer films (even down to 6 nm), which bridges the gap in understanding effects between surface and interface. This facile and reliable determination of Tg of polymer films and the understanding of polymer chain dynamics guide a new prospect for OFETs besides their applications in organic electronics and casting new light on the fundamental understanding of the nature of polymer chain dynamics.

  9. Dimension dependence of clustering dynamics in models of ballistic aggregation and freely cooling granular gas

    Science.gov (United States)

    Paul, Subhajit; Das, Subir K.

    2018-03-01

    Via event-driven molecular dynamics simulations we study kinetics of clustering in assemblies of inelastic particles in various space dimensions. We consider two models, viz., the ballistic aggregation model (BAM) and the freely cooling granular gas model (GGM), for each of which we quantify the time dependence of kinetic energy and average mass of clusters (that form due to inelastic collisions). These quantities, for both the models, exhibit power-law behavior, at least in the long time limit. For the BAM, corresponding exponents exhibit strong dimension dependence and follow a hyperscaling relation. In addition, in the high packing fraction limit the behavior of these quantities become consistent with a scaling theory that predicts an inverse relation between energy and mass. On the other hand, in the case of the GGM we do not find any evidence for such a picture. In this case, even though the energy decay, irrespective of packing fraction, matches quantitatively with that for the high packing fraction picture of the BAM, it is inversely proportional to the growth of mass only in one dimension, and the growth appears to be rather insensitive to the choice of the dimension, unlike the BAM.

  10. Ballistic Electron Emission Microscopy/Spectroscopy on Au/Titanylphthalocyanine/GaAs Heterostructures

    International Nuclear Information System (INIS)

    Oezcan, S; Roch, T; Strasser, G; Smoliner, J; Franke, R; Fritz, T

    2007-01-01

    In this article Au/titanylphthalocyanine/GaAs diodes incorporating ultra smooth thin films of the archetypal organic semiconductor titanylphthalocyanine (TiOPc) were investigated by Ballistic Electron Emission Microscopy/Spectroscopy (BEEM/S). Analyzing the BEEM spectra, we find that the TiOPc increases the BEEM threshold voltage compared to reference Au/GaAs diodes. From BEEM images taken we conclude that our molecular beam epitaxial (MBE) grown samples show very homogeneous transmission, compare to wet chemically manufactured organic films. The barrier height measured on the Au- TiOPc-GaAs is V b ∼ 1.2eV, which is in good agreement with the data found in [T. Nishi, K. Tanai, Y. Cuchi, M. R. Willis, and K. Seki Chem. Phys. Lett., vol. 414, pp. 479-482, 2005.]. The results indicate that TiOPc functions as a p-type semiconductor, which is plausible since the measurements were carried out in air [K. Walzer, T. Toccoli, A. Pallaori, R. Verucchi, T. Fritz, K. Leo, A. Boschetti, and S. Iannotte Surf. Scie., vol. 573, pp. 346-358, 2004

  11. Poly(3-hexylthiophene): TIPS-pentacene blends aiming transistor applications

    Energy Technology Data Exchange (ETDEWEB)

    Silva Ozório, Maiza da, E-mail: ozoriounesp@gmail.com; Nogueira, Gabriel Leonardo; Morais, Rogério Miranda; Silva Martin, Cibely da; Constantino, Carlos José Leopoldo; Alves, Neri

    2016-06-01

    Poly(3-hexylthiophene):6,13-bis(triisopropylsilylethynyl)-pentacene (P3HT:TP) blends with a ratio of 1:1 (wt/wt) were deposited via spin coating on anodized oxide (Al{sub 2}O{sub 3}). A phase separation of the compounds was observed, resulting in the formation of crystalline aggregates of TP molecules that segregate vertically on the surface. The form of segregation depends on the oxide surface treatment used. Spectroscopy analysis shows a higher molecular order of P3HT in the blend than for neat film and that TP molecules are also distributed in the polymeric matrix. Regarding the OFET characteristics, charge carrier mobilities of 1.2 × 10{sup −3} cm{sup 2} V{sup −1} s{sup −1} and 2.0 × 10{sup −3} cm{sup 2} V{sup −1} s{sup −1} were obtained from devices for untreated and (hexamethyldisilazane) HMDS-treated Al{sub 2}O{sub 3} gate dielectric, respectively. These results confirm that P3HT:TP blends have good potential as an active layer in organic field effect transistors (OFETs). - Highlights: • Phase separation occurs in the P3HT:TP blend. • The P3HT:TP blends form aggregates that segregate vertically to the surface. • The molecular order of the P3HT is higher for the blend than for the neat film. • Treatment of surface with HMDS influence in the formation of the aggregate • The P3HT:TP blends have great viability of using for application in transistors.

  12. Transistor-based particle detection systems and methods

    Science.gov (United States)

    Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad Ashraful

    2015-06-09

    Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.

  13. Design method for a digitally trimmable MOS transistor structure

    DEFF Research Database (Denmark)

    Ning, Feng; Bruun, Erik

    1996-01-01

    A digitally trimmable MOS transistor is a MOS transistor consisting of a drain, a source, and a main gate as well as several subgates. The transconductance of the transistor is tunabledigitally by means of connecting subgates either to the main gate or to the source terminal. In this paper......, a systematic design method for a digitally trimmable MOS transistor structure is proposed. Using the proposed method, we have designed a digitally trimmable MOS transistor structure and prototype devices were fabricated in a 2.4 micron n-well CMOS technology. Through measurements on these devices, the design...... method has been experimentally confirmed. The trimmable MOS transistor structure has been applied to a high precision current mirror to reduce mismatch in the current mirror. With the trimmable transistor structure, the mismatch can be reduced by more than one order of magnitude....

  14. High mobility and quantum well transistors design and TCAD simulation

    CERN Document Server

    Hellings, Geert

    2013-01-01

    For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Qu...

  15. Ballistic Imaging in the Primary Breakup Region of Diesel Injector Sprays

    National Research Council Canada - National Science Library

    Linne, M. A; Parker, T. E

    2006-01-01

    ...) for single-shot imaging of the near-field primary breakup region of a diesel spray. Ballistic imaging is a non-intrusive optical measurement technique that produces line-of-sight integrated images...

  16. Ballistic Missile Defense: National Security and the High Frontier of Space.

    Science.gov (United States)

    Adragna, Steven P.

    1985-01-01

    Ballistic missile defense is discussed, and the rationale behind the proposal to place defensive weapons in space is examined. Strategic defense is a national security, political, and moral imperative. (RM)

  17. Small Business Innovation Research Program at the Ballistic Missile Defense Organization

    National Research Council Canada - National Science Library

    1995-01-01

    The audit objective was to determine whether the Ballistic Missile Defense Organization complied with legislation and DoD policy covering commercial potential requirements for Phase 1 of the SBIR program...

  18. Performance of Plain Woven Jute Fabric-Reinforced Polyester Matrix Composite in Multilayered Ballistic System

    Directory of Open Access Journals (Sweden)

    Sergio Neves Monteiro

    2018-02-01

    Full Text Available The ballistic performance of plain woven jute fabric-reinforced polyester matrix composites was investigated as the second layer in a multilayered armor system (MAS. Volume fractions of jute fabric, up to 30 vol %, were mixed with orthophthalic polyester to fabricate laminate composites. Ballistic tests were conducted using high velocity 7.62 mm ammunition. The depth of penetration caused by the bullet in a block of clay witness, simulating a human body, was used to evaluate the MAS ballistic performance according to the international standard. The fractured materials after tests were analyzed by scanning electron microscopy (SEM. The results indicated that jute fabric composites present a performance similar to that of the much stronger Kevlar™, which is an aramid fabric laminate, as MAS second layer with the same thickness. The mechanism of this similar ballistic behavior as well as the comparative advantages of the jute fabric composites over the Kevlar™ are discussed.

  19. Natural Mallow Fiber-Reinforced Epoxy Composite for Ballistic Armor Against Class III-A Ammunition

    Science.gov (United States)

    Nascimento, Lucio Fabio Cassiano; Holanda, Luane Isquerdo Ferreira; Louro, Luis Henrique Leme; Monteiro, Sergio Neves; Gomes, Alaelson Vieira; Lima, Édio Pereira

    2017-10-01

    Epoxy matrix composites reinforced with up to 30 vol pct of continuous and aligned natural mallow fibers were for the first time ballistic tested as personal armor against class III-A 9 mm FMJ ammunition. The ballistic efficiency of these composites was assessed by measuring the dissipated energy and residual velocity after the bullet perforation. The results were compared to those in similar tests of aramid fabric (Kevlar™) commonly used in vests for personal protections. Visual inspection and scanning electron microscopy analysis of impact-fractured samples revealed failure mechanisms associated with fiber pullout and rupture as well as epoxy cracking. As compared to Kevlar™, the mallow fiber composite displayed practically the same ballistic efficiency. However, there is a reduction in both weight and cost, which makes the mallow fiber composites a promising material for personal ballistic protection.

  20. Micro-Doppler Feature Extraction and Recognition Based on Netted Radar for Ballistic Targets

    Directory of Open Access Journals (Sweden)

    Feng Cun-qian

    2015-12-01

    Full Text Available This study examines the complexities of using netted radar to recognize and resolve ballistic midcourse targets. The application of micro-motion feature extraction to ballistic mid-course targets is analyzed, and the current status of application and research on micro-motion feature recognition is concluded for singlefunction radar networks such as low- and high-resolution imaging radar networks. Advantages and disadvantages of these networks are discussed with respect to target recognition. Hybrid-mode radar networks combine low- and high-resolution imaging radar and provide a specific reference frequency that is the basis for ballistic target recognition. Main research trends are discussed for hybrid-mode networks that apply micromotion feature extraction to ballistic mid-course targets.

  1. Design Guide for Aerodynamics Testing of Earth and Planetary Entry Vehicles in a Ballistic Range

    Science.gov (United States)

    Bogdanoff, David W.

    2017-01-01

    The purpose of this manual is to aid in the design of an aerodynamics test of an earth or planetary entry capsule in a ballistic range. In this manual, much use is made of the results and experience gained in 50 years of ballistic range aerodynamics testing at the NASA Ames Research Center, and in particular, that gained in the last 27 years, while the author was working at NASA Ames. The topics treated herein include: Data to be obtained; flight data needed to design test; Reynolds number and dynamic similarity of flight trajectory and ballistic range test; capabilities of various ballistic ranges; Calculations of swerves due to average and oscillating lift and of drag-induced velocity decreases; Model and sabot design; materials, weights and stresses; Sabot separation; Launches at angle of attack and slapping with paper to produce pitch/yaw oscillations.

  2. A Comparison of the Deformation Flow and Failure of Two Tungsten Heavy Alloys in Ballistic Impacts

    National Research Council Canada - National Science Library

    Schuster, Brian E; Peterson, Bryan P; Magness, Lee S

    2006-01-01

    .... Small, but consistent, differences in the ballistic performances of the two lots of penetrators were observed in depth of penetration tests, in thick armor steel targets, and in limit velocity...

  3. Assessment of Phospohrene Field Effect Transistors

    Science.gov (United States)

    2018-01-28

    Promising transistors based on a few layers of phosphorus atoms," in IEEE MTT-5 IMWS- AMP , Suzhou, China, Jul. 2015, pp. 1-3. DOI: 10.1109/LED...2014.2362841. DOI: 10.1109/IMWS- AMP .2015.7324944. Keywords: Contacts, dielectric films, MOSFETs, passivation, stability. [5] X. Luo, K. Xiong, J.C. M. Hwang, Y

  4. Thermal transistor utilizing gas-liquid transition

    KAUST Repository

    Komatsu, Teruhisa S.

    2011-01-25

    We propose a simple thermal transistor, a device to control heat current. In order to effectively change the current, we utilize the gas-liquid transition of the heat-conducting medium (fluid) because the gas region can act as a good thermal insulator. The three terminals of the transistor are located at both ends and the center of the system, and are put into contact with distinct heat baths. The key idea is a special arrangement of the three terminals. The temperature at one end (the gate temperature) is used as an input signal to control the heat current between the center (source, hot) and another end (drain, cold). Simulating the nanoscale systems of this transistor, control of heat current is demonstrated. The heat current is effectively cut off when the gate temperature is cold and it flows normally when it is hot. By using an extended version of this transistor, we also simulate a primitive application for an inverter. © 2011 American Physical Society.

  5. Modelling and characterisation of transistors | Akande | Global ...

    African Journals Online (AJOL)

    Models and characterisation of active devices that control the flow of energy operating within and outside the active region of the operating domain are presented. Specifically, the incremental charge carrier and Ebers Moll models of the bipolar junction transistor are presented and the parameters of electrical behaviour of ...

  6. Radiation Damage In Advanced Bipolar Transistors

    Science.gov (United States)

    Zoutendyk, John A.; Goben, Charles A.; Berndt, Dale F.

    1989-01-01

    Report describes measurements of common-emitter current gains (hFE) of advanced bipolar silicon transistors before, during, and after irradiation with 275-MeV bromine ions, 2.5-MeV electrons, and conductivity rays from cobalt-60 atoms.

  7. Advancement in organic nanofiber based transistors

    DEFF Research Database (Denmark)

    Jensen, Per Baunegaard With; Kjelstrup-Hansen, Jakob; Tavares, Luciana

    The focus of this project is to study the light emission from nanofiber based organic light-emitting transistors (OLETs) with the overall aim of developing efficient, nanoscale light sources with different colors integrated on-chip. The research performed here regards the fabrication and characte...

  8. A ferroelectric transparent thin-film transistor

    NARCIS (Netherlands)

    Prins, MWJ; GrosseHolz, KO; Muller, G; Cillessen, JFM; Giesbers, JB; Weening, RP; Wolf, RM

    1996-01-01

    Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8Os3 as a ferroelectric

  9. Series transistors isolate amplifier from flyback voltage

    Science.gov (United States)

    Banks, W.

    1967-01-01

    Circuit enables high sawtooth currents to be passed through a deflection coil and isolate the coil driving amplifier from the flyback voltage. It incorporates a switch consisting of transistors in series with the driving amplifier and deflection coil. The switch disconnects the deflection coil from the amplifier during the retrace time.

  10. Understanding the ballistic event : Methodology and observations relevant to ceramic armour

    Science.gov (United States)

    Healey, Adam

    The only widely-accepted method of gauging the ballistic performance of a material is to carry out ballistic testing; due to the large volume of material required for a statistically robust test, this process is very expensive. Therefore a new test, or suite of tests, that employ widely-available and economically viable characterisation methods to screen candidate armour materials is highly desirable; in order to design such a test, more information on the armour/projectile interaction is required. This work presents the design process and results of using an adapted specimen configuration to increase the amount of information obtained from a ballistic test. By using a block of ballistic gel attached to the ceramic, the fragmentation generated during the ballistic event was captured and analysed. In parallel, quasi-static tests were carried out using ring-on-ring biaxial disc testing to investigate relationships between quasi-static and ballistic fragment fracture surfaces. Three contemporary ceramic armour materials were used to design the test and to act as a baseline; Sintox FA alumina, Hexoloy SA silicon carbide and 3M boron carbide. Attempts to analyse the post-test ballistic sample non-destructively using X-ray computed tomography (XCT) were unsuccessful due to the difference in the density of the materials and the compaction of fragments. However, the results of qualitative and quantitative fracture surface analysis using scanning electron microscopy showed similarities between the fracture surfaces of ballistic fragments at the edges of the tile and biaxial fragments; this suggests a relationship between quasi-static and ballistic fragments created away from the centre of impact, although additional research will be required to determine the reason for this. Ballistic event-induced porosity was observed and quantified on the fracture surfaces of silicon carbide samples, which decreased as distance from centre of impact increased; upon further analysis this

  11. Trident II (D-5) Sea Launched Ballistic Missile UGM 133A (Trident II Missile)

    Science.gov (United States)

    2015-12-01

    TRIDENT II (D5) Sea-Launched Ballistic Missile UGM 133A (TRIDENT II (D5) missile) developed an improved Submarine Launched Ballistic Missile with...The TRIDENT II (D5) missile’s increased payload allows the deterrent mission to be achieved with fewer submarines . Trident II Missile December 2015...needed for the cable builds, which extended the overall time required for build/test, and b) unplanned work was required during the Burn-In Console

  12. Forensic chemistry: perspective of new analytical methods applied to documentoscopy, ballistic and drugs of abuse

    OpenAIRE

    Romão, Wanderson; Schwab, Nicolas V; Bueno, Maria Izabel M. S; Sparrapan, Regina; Eberlin, Marcos N; Martiny, Andrea; Sabino, Bruno D; Maldaner, Adriano O

    2011-01-01

    In this review recent methods developed and applied to solve criminal occurences related to documentoscopy, ballistic and drugs of abuse are discussed. In documentoscopy, aging of ink writings, the sequence of line crossings and counterfeiting of documents are aspects to be solved with reproducible, fast and non-destructive methods. In ballistic, the industries are currently producing ''lead-free'' or ''nontoxic'' handgun ammunitions, so new methods of gunshot residues characterization are be...

  13. The role of contemporary ferrous and nonferrous materials in ballistic protection of military vehicles

    OpenAIRE

    Dimeski, Dimko; Srebrenkoska, Vineta

    2014-01-01

    Metallic armor is the most mature class of armor materials and is still widely used for ballistic protection today. Although the materials for metallic armor are highly developed, new and innovative metallic armor systems are being used to improve the ballistic protection (while reducing the weight) of various weapon systems. Historically, most metallic armor evolved from designing materials to meet structural or other requirements rather than from designing specifically for balli...

  14. Computational Predictions of Rear Surface Velocities for Metal Plates under Ballistic Impact

    Science.gov (United States)

    2015-06-01

    Reinecke WG, editor. Ballistics ’99. Proceedings of the 18th International Symposium on Ballistics; 1999 Nov 15–19; San Antonio, TX. Lancaster (PA...Antonio, TX. Lancaster (PA): Technomic Pub Co. p. 761–768. 6. Robinson AC, Brunner TA, Carroll S, Drake R, Garasi CJ, Gardiner T, Haill T, Heath H...material library . While the primary data in this report does not consider fracture models, the comparisons below do include default settings of the JC

  15. Small Business Administration Section 8 (A) Support Services Contracts at the Ballistic Missile Defense Organization.

    Science.gov (United States)

    1994-12-30

    W.V.W.W/.*.’ OFFICE OF THE INSPECTOR GENERAL SMALL BUSINESS ADMINISTRATION SECTION 8(A) SUPPORT SERVICES CONTRACTS AT THE BALLISTIC MISSILE...ORGANIZATION DIRECTOR, DEFENSE LOGISTICS AGENCY SUBJECT: Audit Report on Small Business Administration Section 8(a) Support Services Contracts at the...Project No. 2CH-5031.01) SMALL BUSINESS ADMINISTRATION SECTION 8(A) SUPPORT SERVICES CONTRACTS AT THE BALLISTIC MISSILE DEFENSE ORGANIZATION

  16. Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

    OpenAIRE

    Weingart, S.; Bock, C.; Kunze, U.; Speck, F.; Seyller, Th.; Ley, L.

    2009-01-01

    We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.

  17. Comparison of porcine thorax to gelatine blocks for wound ballistics studies

    OpenAIRE

    Mabbott, A.; Carr, D. J.; Champion, S.; Malbon, C.

    2016-01-01

    Tissue simulants are typically used in ballistic testing as substitutes for biological tissues. Many simulants have been used, with gelatine amongst the most common. While two concentrations of gelatine (10 and 20?%) have been used extensively, no agreed standard exists for the preparation of either. Comparison of ballistic damage produced in both concentrations is lacking. The damage produced in gelatine is also questioned, with regards to what it would mean for specific areas of living tiss...

  18. Application of Super-Hydrophobic Coating for Enhanced Water Repellency of Ballistic Fabric

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Barton [ORNL; Rajic, Slobodan [ORNL; Hunter, Scott Robert [ORNL

    2014-10-01

    The objective of this work was to demonstrate that a superhydrophobic coating technology developed at Oak Ridge National Laboratory (ORNL) increases the water repellency of ballistic fabric beyond that provided by existing water repellency treatments. This increased water repellency has the potential to provide durable ballistic fabric for body armor without adding significant weight to the armor or significant manufacturing cost. Specimens of greige and scoured ballistic fabric were treated with a superhydrophobic coating and their weights and degree of water repellency were compared to specimens of untreated fabric. Treatment of both greige and scoured ballistic fabrics yielded highly water repellent fabrics. Our measurements of the water droplet contact angles gave values of approximately 150 , near the lower limit of 160 for superhydrophobic surfaces. The coatings increased the fabric weights by approximately 6%, an amount that is many times less than the estimated weight increase in a conventional treatment of ballistic fabric. The treated fabrics retained a significant amount of water repellency following a basic abrasion test, with water droplet contact angles decreasing by 14 to 23 . Microscopic analysis of the coating applied to woven fabrics indicated that the coating adhered equally well to fibers of greige and scoured yarns. Future evaluation of the superhydrophobic water repellent treatment will involve the manufacture of shoot packs of treated fabric for ballistic testing and provide an analysis of manufacturing scale-up and cost-to-benefit considerations.

  19. Acute effect of a ballistic and a static stretching exercise bout on flexibility and maximal strength.

    Science.gov (United States)

    Bacurau, Reury Frank Pereira; Monteiro, Gizele Assis; Ugrinowitsch, Carlos; Tricoli, Valmor; Cabral, Leonardo Ferreira; Aoki, Marcelo Saldanha

    2009-01-01

    Different stretching techniques have been used during warm-up routines. However, these routines may decrease force production. The purpose of this study was to compare the acute effect of a ballistic and a static stretching protocol on lower-limb maximal strength. Fourteen physically active women (169.3 +/- 8.2 cm; 64.9 +/- 5.9 kg; 23.1 +/- 3.6 years) performed three experimental sessions: a control session (estimation of 45 degrees leg press one-repetition maximum [1RM]), a ballistic session (20 minutes of ballistic stretch and 45 degrees leg press 1RM), and a static session (20 minutes of static stretch and 45 degrees leg press 1RM). Maximal strength decreased after static stretching (213.2 +/- 36.1 to 184.6 +/- 28.9 kg), but it was unaffected by ballistic stretching (208.4 +/- 34.8 kg). In addition, static stretching exercises produce a greater acute improvement in flexibility compared with ballistic stretching exercises. Consequently, static stretching may not be recommended before athletic events or physical activities that require high levels of force. On the other hand, ballistic stretching could be more appropriate because it seems less likely to decrease maximal strength.

  20. Have we underestimated the kinematic and kinetic benefits of non-ballistic motion?

    Science.gov (United States)

    Frost, David M; Cronin, John B; Newton, Robert U

    2008-09-01

    Explosive upper-body movements, with which the load is not thrown (non-ballistic), may comprise a phase during which forces are produced in opposition to the motion of the load. Thirty men completed three test sessions (free weight, ballistic, and pneumatic), each consisting of a one-repetition maximum (1-RM) and four explosive repetitions of a bench press at six loads (15, 30, 45, 60, 75, and 90% 1-RM). The end of the lifting phase for the non-ballistic conditions (free weight and pneumatic) was defined by: the point of peak barbell displacement and the point at which the vertical force became negative (positive work). When analysed by peak displacement, the ballistic condition elicited significantly greater mean velocity, force, and power at loads of 15-60% 1-RM compared with the free weight condition. When the period of negative work was removed, the mean free weight velocity, force, and power at loads below 60% 1-RM increased. Consequently, the only differences between the free weight and ballistic conditions were found at loads of 15% and 30% 1-RM. Including a period of negative work may underestimate all kinematic and kinetic variables dependent on the time to, or position of, the end of the lifting phase, for non-ballistic efforts.

  1. Single molecule transistor based nanopore for the detection of nicotine

    Science.gov (United States)

    Ray, S. J.

    2014-12-01

    A nanopore based detection methodology was proposed and investigated for the detection of Nicotine. This technique uses a Single Molecular Transistor working as a nanopore operational in the Coulomb Blockade regime. When the Nicotine molecule is pulled through the nanopore area surrounded by the Source(S), Drain (D), and Gate electrodes, the charge stability diagram can detect the presence of the molecule and is unique for a specific molecular structure. Due to the weak coupling between the different electrodes which is set by the nanopore size, the molecular energy states stay almost unaffected by the electrostatic environment that can be realised from the charge stability diagram. Identification of different orientation and position of the Nicotine molecule within the nanopore area can be made from specific regions of overlap between different charge states on the stability diagram that could be used as an electronic fingerprint for detection. This method could be advantageous and useful to detect the presence of Nicotine in smoke which is usually performed using chemical chromatography techniques.

  2. Single molecule transistor based nanopore for the detection of nicotine

    Energy Technology Data Exchange (ETDEWEB)

    Ray, S. J., E-mail: ray.sjr@gmail.com [Institute of Materials Science, Technical University of Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany)

    2014-12-28

    A nanopore based detection methodology was proposed and investigated for the detection of Nicotine. This technique uses a Single Molecular Transistor working as a nanopore operational in the Coulomb Blockade regime. When the Nicotine molecule is pulled through the nanopore area surrounded by the Source(S), Drain (D), and Gate electrodes, the charge stability diagram can detect the presence of the molecule and is unique for a specific molecular structure. Due to the weak coupling between the different electrodes which is set by the nanopore size, the molecular energy states stay almost unaffected by the electrostatic environment that can be realised from the charge stability diagram. Identification of different orientation and position of the Nicotine molecule within the nanopore area can be made from specific regions of overlap between different charge states on the stability diagram that could be used as an electronic fingerprint for detection. This method could be advantageous and useful to detect the presence of Nicotine in smoke which is usually performed using chemical chromatography techniques.

  3. A biologically inspired neural network controller for ballistic arm movements

    Directory of Open Access Journals (Sweden)

    Schmid Maurizio

    2007-09-01

    Full Text Available Abstract Background In humans, the implementation of multijoint tasks of the arm implies a highly complex integration of sensory information, sensorimotor transformations and motor planning. Computational models can be profitably used to better understand the mechanisms sub-serving motor control, thus providing useful perspectives and investigating different control hypotheses. To this purpose, the use of Artificial Neural Networks has been proposed to represent and interpret the movement of upper limb. In this paper, a neural network approach to the modelling of the motor control of a human arm during planar ballistic movements is presented. Methods The developed system is composed of three main computational blocks: 1 a parallel distributed learning scheme that aims at simulating the internal inverse model in the trajectory formation process; 2 a pulse generator, which is responsible for the creation of muscular synergies; and 3 a limb model based on two joints (two degrees of freedom and six muscle-like actuators, that can accommodate for the biomechanical parameters of the arm. The learning paradigm of the neural controller is based on a pure exploration of the working space with no feedback signal. Kinematics provided by the system have been compared with those obtained in literature from experimental data of humans. Results The model reproduces kinematics of arm movements, with bell-shaped wrist velocity profiles and approximately straight trajectories, and gives rise to the generation of synergies for the execution of movements. The model allows achieving amplitude and direction errors of respectively 0.52 cm and 0.2 radians. Curvature values are similar to those encountered in experimental measures with humans. The neural controller also manages environmental modifications such as the insertion of different force fields acting on the end-effector. Conclusion The proposed system has been shown to properly simulate the development of

  4. A transistor based on 2D material and silicon junction

    Science.gov (United States)

    Kim, Sanghoek; Lee, Seunghyun

    2017-07-01

    A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor ( i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (transistor current gain ( β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

  5. Investigation on energy absorption efficiency of each layer in ballistic armour panel for applications in hybrid design

    OpenAIRE

    Yang, Yanfei; Chen, Xiaogang

    2017-01-01

    This study aims to reveal different energy absorption efficiency of each layer when armour panel is under ballistic impact. Through Finite Element (FE) modelling and ballistic tests, it is found that when fabrics are layered up in a panel, energy absorption efficiency is only 30%–60% of an individual fabric layer with free boundary condition. In addition, fabric layers in front, middle, and back exhibit different ballistic characteristics. Therefore, a new hybrid design principle has been pro...

  6. China and ballistic missile defense: 1955 to 2002 and beyond

    Energy Technology Data Exchange (ETDEWEB)

    Brad, Roberts

    2004-07-01

    China's opposition to U.S. ballistic missile defense was forcefully articulated officially and unofficially between 1991 and 2001. Vociferous opposition gave way to near silence following U.S. ABM Treaty withdrawal, raising a question about precisely whether and how China will respond to future U.S. deployments in both the political and military-operational realms. To gauge likely future responses, it is useful to put the experience of the 1991-2001 period into historical context. China's attitudes toward BMD have passed through a series of distinct phases since the beginning of the nuclear era, as China has been concerned alternately with the problems of strategic defense by both the Soviet Union and United States (and others) around its periphery. Throughout this era it has also pursued its own strategic defense capabilities. There are important elements of continuity in China's attitudes concerns about the viability of its own force and about strategic stability. These suggest the likelihood of significant responses to U.S. BMD even in the absence of sharp rhetoric. (author)

  7. China and ballistic missile defense: 1955 to 2002 and beyond

    International Nuclear Information System (INIS)

    Brad, Roberts

    2004-01-01

    China's opposition to U.S. ballistic missile defense was forcefully articulated officially and unofficially between 1991 and 2001. Vociferous opposition gave way to near silence following U.S. ABM Treaty withdrawal, raising a question about precisely whether and how China will respond to future U.S. deployments in both the political and military-operational realms. To gauge likely future responses, it is useful to put the experience of the 1991-2001 period into historical context. China's attitudes toward BMD have passed through a series of distinct phases since the beginning of the nuclear era, as China has been concerned alternately with the problems of strategic defense by both the Soviet Union and United States (and others) around its periphery. Throughout this era it has also pursued its own strategic defense capabilities. There are important elements of continuity in China's attitudes concerns about the viability of its own force and about strategic stability. These suggest the likelihood of significant responses to U.S. BMD even in the absence of sharp rhetoric. (author)

  8. Clothing increases the risk of indirect ballistic fractures

    Science.gov (United States)

    2013-01-01

    Background Current literature has shown the mechanism of how indirect fractures occur but has not determined what factors increase the risks of such fractures. The objective of this study is thus to determine the effect of clothing and soft tissue thickness on the risk of indirect fracture formation. Methods Twenty-five fresh red deer femora embedded in ballistic gelatine were shot with varying distances off their medial cortex with a 5.56 × 45 mm North Atlantic Treaty Organization (NATO) bullet while being filmed with a slow-motion video. We compared the effect of two different gelatine depths and the effect of denim cloth laid onto the impact surface of the moulds. Results Bullet passage in thinner moulds failed to cause fracture because the bullet exited the mould before a large expanding temporary cavity was produced. Clothing dramatically altered the size and depth of the expanding cavity, as well as increased lateral pressures, resulting in more severe fractures with greater bullet distances from the bone that can cause fracture. Conclusions Clothing increases the risk of indirect fracture and results in larger, more superficial temporary cavities, with greater lateral pressures than are seen in unclothed specimens, resulting in more comminuted fractures. Greater tissue depth affords the 5.56 × 45 mm NATO a chance to yaw and thus develop an enlarging temporary cavity that is sufficient to cause fracture. PMID:24267379

  9. Photodegradation in ballistic laminates: Spectroscopy and lifetime extension

    Energy Technology Data Exchange (ETDEWEB)

    Renschler, C.L.; Stallard, B.R.; White, C.A.; Garcia, M.J.; Morse, H.E. [Sandia National Labs., Albuquerque, NM (United States). Properties of Organic Materials Dept.

    1996-06-01

    Several years ago, the Materials and Process Sciences Center (Org. 1800) was asked by Dept. 9613 to study the materials aging issues which had led to the loss of ballistic protection by Armored Tractor (AT) windshields and windows. The authors speculated that this loss of impact strength was due to photodegradation of the polycarbonate (PC) inboard ply. They developed a spectroscopic method to identify changes in the outboard surface of the PC, and showed that the changes in the surface which occurred upon natural aging in the field could be reproduced by exposing the laminates to a simulated solar flux. Based on these results, they recommended changes in the adhesive interlayers to filter out the ultraviolet (UV) light causing the aging problem. Working with the laminate vendor, PPG, they re-designed the laminates to implement these changes and block essentially all UV light from the inboard ply. The most recent phase of this work involved accelerated solar aging of laminates made with the new design to verify that photoaging effects have been blocked by the new materials. They report here the results of that study, and recommended follow-on work.

  10. Current neutralization in ballistic transport of light ion beams

    International Nuclear Information System (INIS)

    Hubbard, R.F.; Slinker, S.P.; Lampe, M.; Joyce, G.; Ottinger, P.

    1992-01-01

    Intense light ion beams are being considered as drivers to ignite fusion targets in the Laboratory Microfusion Facility (LMF). Ballistic transport of these beams from the diode to the target is possible only if the beam current is almost completely neutralized by plasma currents. This paper summarizes related work on relativistic electron beam and heavy ion beam propagation and describes a simple simulation model (DYNAPROP) which has been modified to treat light ion beam propagation. DYNAPROP uses an envelope equation to treat beam dynamics and uses rate equations to describe plasma and conductivity generation. The model has been applied both to the high current, 30 MeV Li +3 beams for LMF as well as low current, 1.2 MeV proton beams which are currently being studied on GAMBLE B at the Naval Research Laboratory. The predicted ratio of net currents to beam current is ∼0.1--0.2 for the GAMBLE experiment and ∼0.01 for LMF. The implications of these results for LMF and the GAMBLE experiments art discussed in some detail. The simple resistive model in DYNAPROP has well-known limitations in the 1 torr regime which arise primarily from the neglect of plasma electron transport. Alternative methods for treating the plasma response are discussed

  11. Core-satellite supraparticles to ballistically stamp nanostructures on surfaces.

    Science.gov (United States)

    Oppmann, Maximilian; Miller, Franziska; Thürauf, Sandra; Groppe, Philipp; Prieschl, Johannes; Stauch, Claudia; Mandel, Karl

    2018-03-27

    Nanostructured surfaces are of great importance in a very wide range of fields. They can be obtained by imprint or deposition techniques. However, these are usually sophisticated to perform. Generally, it is not easy to equip an object/product with a nanostructure post manufacturing. Yet, it would be very beneficial to achieve a modification of an arbitrary surface with a nanostructure of choice at a later stage by an approach that is simple to perform without the need of sophisticated equipment or excessive treatment by physico-chemical methods. Herein, such a process is reported which combines two "old-fashioned" techniques, namely sandblasting and rubber-stamping, and translates them to the "nano-world". By creating core-satellite supraparticles via spray-drying, a ballistic core-satellite stamp particle system is obtained which can be used to easily transfer a wide range of nanoparticles to a great variety of surfaces to equip these with a nanostructure and subsequently advanced properties. These include water-repellant, anti-fouling or anti-dust surfaces. Moreover, it is also demonstrated that the approach can be used to manufacture well-defined nano-imprinted surfaces. Such surfaces showed an improved spreading behavior for aliphatic alcohols, thus rendering such surfaces for instance very susceptible for disinfectants. All in all, the simple technique described herein has a great potential for creating nanostructured surfaces on nearly any surface.

  12. Ballistic thermoelectric properties of nitrogenated holey graphene nanostructures

    Science.gov (United States)

    Cao, Wei; Xiao, Huaping; Ouyang, Tao; Zhong, Jianxin

    2017-11-01

    In this study, we theoretically investigate the ballistic thermoelectric performance of a new two-dimensional material, nitrogenated holey graphene (NHG), using nonequilibrium Green's function method. The calculations show that compared to graphene, such novel single atomic layer structure exhibits better thermoelectric performance. At room temperature, the stable hole (electron) thermoelectric figure of merit ( Z T ) could approach 0.75 (0.2) and 0.6 (0.2) for zigzag-edged (Z-NHGNRs) and armchair-edged NHGNRs (A-NHGNRs), respectively. To achieve better thermoelectric performance, the effect of geometric engineering (chevron-type nanoribbons and rhomboid quantum dot) on the electronic and phononic transport properties of Z-NHGNRs is further discussed. The results indicate that structure modulation is indeed a viable approach to enhance the thermoelectric properties (the figure of merit could exceed 1.5 and 1.3 for the chevron-type and rhomboid quantum dot system, respectively). On analyzing the transport properties, such improvement on the figure of merit is mainly attributed to the increased Seebeck coefficient and reduced thermal conductance (including both electronic and phononic contributions). Our findings presented in this paper qualify NHG as a promising thermoelectric material and provide theoretical guidance for fabricating the outstanding thermoelectric devices.

  13. A ballistic transport model for electronic excitation following particle impact

    Science.gov (United States)

    Hanke, S.; Heuser, C.; Weidtmann, B.; Wucher, A.

    2018-01-01

    We present a ballistic model for the transport of electronic excitation energy induced by keV particle bombardment onto a solid surface. Starting from a free electron gas model, the Boltzmann transport equation (BTE) is employed to follow the evolution of the temporal and spatial distribution function f (r → , k → , t) describing the occupation probability of an electronic state k → at position r → and time t. Three different initializations of the distribution function are considered: i) a thermal distribution function with a locally and temporally elevated electron temperature, ii) a peak excitation at a specific energy above the Fermi level with a quasi-isotropic distribution in k-space and iii) an anisotropic peak excitation with k-vectors oriented in a specific transport direction. While the first initialization resembles a distribution function which may, for instance, result from electronic friction of moving atoms within an ion induced collision cascade, the peak excitation can in principle result from an autoionization process after excitation in close binary collisions. By numerically solving the BTE, we study the electronic energy exchange along a one dimensional transport direction to obtain a time and space resolved excitation energy distribution function, which is then analyzed in view of general transport characteristics of the chosen model system.

  14. Recent progress in photoactive organic field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yutaka Wakayama

    2014-04-01

    Full Text Available Recent progress in photoactive organic field-effect transistors (OFETs is reviewed. Photoactive OFETs are divided into light-emitting (LE and light-receiving (LR OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

  15. Recent progress in photoactive organic field-effect transistors.

    Science.gov (United States)

    Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

    2014-04-01

    Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

  16. Radiation-tolerant, sidewall-hardened SOI/MOS transistors

    International Nuclear Information System (INIS)

    Tsao, S.S.; Fleetwood, D.M.; Weaver, H.T.; Pfeiffer, L.; Celler, G.K.

    1987-01-01

    Total dose radiation effects were measured for sidewall-hardened n-channel SOI/MOS transistors, fabricated in zone-melt-recrystallized (ZMR) and oxygen-implanted (SIMOX) SOI materials. The authors compare the radiation responses of transistors with three types of sidewall or edge configurations: island transistors with passivated edges, island transistors without passivated edges, and edgeless (enclosed-gate) transistors. Data from these three test devices allow clear separation of front-, back-, and edge-channel conduction. Passivated edge channels were hard to Co-60 doses in excess of 24 Mrad(Si). The overall hardness of the passivated-edge transistors is limited only by the radiation-induced threshold voltage shifts (about -1 V at 1.0 Mrad) of the top channel. No significant differences in total-dose response of ZMR and SIMOX devices were observed under the radiation conditions employed

  17. Molecular electronics: the single molecule switch and transistor

    NARCIS (Netherlands)

    Sotthewes, Kai; Geskin, Victor; Heimbuch, Rene; Kumar, Avijit; Zandvliet, Henricus J.W.

    2014-01-01

    In order to design and realize single-molecule devices it is essential to have a good understanding of the properties of an individual molecule. For electronic applications, the most important property of a molecule is its conductance. Here we show how a single octanethiol molecule can be connected

  18. Dissipative tunneling and orthogonality catastrophe in molecular transistors

    DEFF Research Database (Denmark)

    Braig, S.; Flensberg, Karsten

    2004-01-01

    of the charge on the molecule to the vibrational modes of the environment has on the I-V characteristics. We find that, for comparable characteristic length scales of the van der Waals and electrostatic interaction of the molecule with the environmental vibrational modes, the I-V characteristics...... are qualitatively changed from what one would expect from orthogonality catastrophe and develop a steplike discontinuity at the onset of conduction. For the case of very different length scales, we recover dissipation consistent with modeling the electrostatic forces as an external influence on the system comprised...

  19. Effects of acute static, ballistic, and PNF stretching exercise on the muscle and tendon tissue properties.

    Science.gov (United States)

    Konrad, A; Stafilidis, S; Tilp, M

    2017-10-01

    The purpose of this study was to investigate the influence of a single static, ballistic, or proprioceptive neuromuscular facilitation (PNF) stretching exercise on the various muscle-tendon parameters of the lower leg and to detect possible differences in the effects between the methods. Volunteers (n = 122) were randomly divided into static, ballistic, and PNF stretching groups and a control group. Before and after the 4 × 30 s stretching intervention, we determined the maximum dorsiflexion range of motion (RoM) with the corresponding fascicle length and pennation angle of the gastrocnemius medialis. Passive resistive torque (PRT) and maximum voluntary contraction (MVC) were measured with a dynamometer. Observation of muscle-tendon junction (MTJ) displacement with ultrasound allowed us to determine the length changes in the tendon and muscle, respectively, and hence to calculate stiffness. Although RoM increased (static: +4.3%, ballistic: +4.5%, PNF: +3.5%), PRT (static: -11.4%, ballistic: -11.5%, PNF: -13,7%), muscle stiffness (static: -13.1%, ballistic: -20.3%, PNF: -20.2%), and muscle-tendon stiffness (static: -11.3%, ballistic: -10.5%, PNF: -13.7%) decreased significantly in all the stretching groups. Only in the PNF stretching group, the pennation angle in the stretched position (-4.2%) and plantar flexor MVC (-4.6%) decreased significantly. Multivariate analysis showed no clinically relevant difference between the stretching groups. The increase in RoM and the decrease in PRT and muscle-tendon stiffness could be explained by more compliant muscle tissue following a single static, ballistic, or PNF stretching exercise. © 2017 The Authors Scandinavian Journal of Medicine & Science In Sports Published by John Wiley & Sons Ltd.

  20. 3D topography measurements on correlation cells—a new approach to forensic ballistics identifications

    International Nuclear Information System (INIS)

    Song, John; Chu, Wei; Tong, Mingsi; Soons, Johannes

    2014-01-01

    Based on three-dimensional (3D) topography measurements on correlation cells, the National Institute of Standards and Technology (NIST) has developed the ‘NIST Ballistics Identification System (NBIS)’ aimed at accurate ballistics identifications and fast ballistics evidence searches. The 3D topographies are divided into arrays of correlation cells to identify ‘valid correlation areas’ and eliminate ‘invalid correlation areas’ from the matching and identification procedure. A ‘congruent matching cells’ (CMC)’ method using three types of identification parameters of the paired correlation cells (cross correlation function maximum CCF max , spatial registration position in x–y and registration angle θ) is used for high accuracy ballistics identifications. ‘Synchronous processing’ is proposed for correlating multiple cell pairs at the same time to increase the correlation speed. The proposed NBIS can be used for correlations of both geometrical topographies and optical intensity images. All the correlation parameters and algorithms are in the public domain and subject to open tests. An error rate reporting procedure has been developed that can greatly add to the scientific support for the firearm and toolmark identification specialty, and give confidence to the trier of fact in court proceedings. The NBIS is engineered to employ transparent identification parameters and criteria, statistical models and correlation algorithms. In this way, interoperability between different ballistics identification systems can be more easily achieved. This interoperability will make the NBIS suitable for ballistics identifications and evidence searches with large national databases, such as the National Integrated Ballistic Information Network in the United States. (paper)

  1. 3D topography measurements on correlation cells—a new approach to forensic ballistics identifications

    Science.gov (United States)

    Song, John; Chu, Wei; Tong, Mingsi; Soons, Johannes

    2014-06-01

    Based on three-dimensional (3D) topography measurements on correlation cells, the National Institute of Standards and Technology (NIST) has developed the ‘NIST Ballistics Identification System (NBIS)’ aimed at accurate ballistics identifications and fast ballistics evidence searches. The 3D topographies are divided into arrays of correlation cells to identify ‘valid correlation areas’ and eliminate ‘invalid correlation areas’ from the matching and identification procedure. A ‘congruent matching cells’ (CMC)’ method using three types of identification parameters of the paired correlation cells (cross correlation function maximum CCFmax, spatial registration position in x-y and registration angle θ) is used for high accuracy ballistics identifications. ‘Synchronous processing’ is proposed for correlating multiple cell pairs at the same time to increase the correlation speed. The proposed NBIS can be used for correlations of both geometrical topographies and optical intensity images. All the correlation parameters and algorithms are in the public domain and subject to open tests. An error rate reporting procedure has been developed that can greatly add to the scientific support for the firearm and toolmark identification specialty, and give confidence to the trier of fact in court proceedings. The NBIS is engineered to employ transparent identification parameters and criteria, statistical models and correlation algorithms. In this way, interoperability between different ballistics identification systems can be more easily achieved. This interoperability will make the NBIS suitable for ballistics identifications and evidence searches with large national databases, such as the National Integrated Ballistic Information Network in the United States.

  2. Application of the Johnson criteria to graphene transistors

    International Nuclear Information System (INIS)

    Kelly, M J

    2013-01-01

    For 60 years, the Johnson criteria have guided the development of materials and the materials choices for field-effect and bipolar transistor technology. Intrinsic graphene is a semi-metal, precluding transistor applications, but only under lateral bias is a gap opened and transistor action possible. This first application of the Johnson criteria to biased graphene suggests that this material will struggle to ever achieve competitive commercial applications. (fast track communication)

  3. Organic Thin-Film Transistor (OTFT-Based Sensors

    Directory of Open Access Journals (Sweden)

    Daniel Elkington

    2014-04-01

    Full Text Available Organic thin film transistors have been a popular research topic in recent decades and have found applications from flexible displays to disposable sensors. In this review, we present an overview of some notable articles reporting sensing applications for organic transistors with a focus on the most recent publications. In particular, we concentrate on three main types of organic transistor-based sensors: biosensors, pressure sensors and “e-nose”/vapour sensors.

  4. Vertically Integrated Multiple Nanowire Field Effect Transistor.

    Science.gov (United States)

    Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Park, Jun-Young; Bang, Tewook; Jeon, Seung-Bae; Hur, Jae; Lee, Dongil; Choi, Yang-Kyu

    2015-12-09

    A vertically integrated multiple channel-based field-effect transistor (FET) with the highest number of nanowires reported ever is demonstrated on a bulk silicon substrate without use of wet etching. The driving current is increased by 5-fold due to the inherent vertically stacked five-level nanowires, thus showing good feasibility of three-dimensional integration-based high performance transistor. The developed fabrication process, which is simple and reproducible, is used to create multiple stiction-free and uniformly sized nanowires with the aid of the one-route all-dry etching process (ORADEP). Furthermore, the proposed FET is revamped to create nonvolatile memory with the adoption of a charge trapping layer for enhanced practicality. Thus, this research suggests an ultimate design for the end-of-the-roadmap devices to overcome the limits of scaling.

  5. Cylindrical-shaped nanotube field effect transistor

    KAUST Repository

    Hussain, Muhammad Mustafa

    2015-12-29

    A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

  6. Benchmarking organic mixed conductors for transistors

    KAUST Repository

    Inal, Sahika

    2017-11-20

    Organic mixed conductors have garnered significant attention in applications from bioelectronics to energy storage/generation. Their implementation in organic transistors has led to enhanced biosensing, neuromorphic function, and specialized circuits. While a narrow class of conducting polymers continues to excel in these new applications, materials design efforts have accelerated as researchers target new functionality, processability, and improved performance/stability. Materials for organic electrochemical transistors (OECTs) require both efficient electronic transport and facile ion injection in order to sustain high capacity. In this work, we show that the product of the electronic mobility and volumetric charge storage capacity (µC*) is the materials/system figure of merit; we use this framework to benchmark and compare the steady-state OECT performance of ten previously reported materials. This product can be independently verified and decoupled to guide materials design and processing. OECTs can therefore be used as a tool for understanding and designing new organic mixed conductors.

  7. Nanowire field effect transistors principles and applications

    CERN Document Server

    Jeong, Yoon-Ha

    2014-01-01

    “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

  8. BUSFET -- A radiation-hardened SOI transistor

    International Nuclear Information System (INIS)

    Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Dodd, P.E.

    1999-01-01

    The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, the authors propose a partially-depleted SOI transistor structure for mitigating the effects of trapped charge in the buried oxide on radiation hardness. They call this structure the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU or dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration, and the depth of the source. 3-D simulations show that for a body doping concentration of 10 18 cm -3 , a drain bias of 3 V, and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3 x 10 17 cm -3 , a thicker silicon film (300 nm) must be used

  9. Planar graphene tunnel field-effect transistor

    OpenAIRE

    Katkov, V. L.; Osipov, V. A.

    2013-01-01

    We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that such device will have a pronounced switching effect at low gate voltage and high on/off current ratio at room temperature.

  10. Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Akhavan, Nima Dehdashti; Afzalian, Aryan; Lee, Chi-Woo; Yan, Ran; Ferain, Isabelle; Razavi, Pedram; Yu, Ran; Fagas, Giorgos; Colinge, Jean-Pierre

    2010-08-01

    In this paper we investigate the effects of intravalley acoustic phonon scattering on the quantum transport and on the electrical characteristics of multigate silicon nanowire metal-oxide-semiconductor field-effect transistors. We show that acoustic phonons cause a shift and broadening of the local DOS in the nanowire, which modifies the electrical characteristics of the device. The influence of scattering on off-state and on-state currents is investigated for different values of channel length. In the ballistic transport regime, source-to-drain tunneling current is predominant, whereas in the presence of acoustic phonons, diffusion becomes the dominant current transport mechanism. A three-dimensional quantum mechanical device simulator based on the nonequilibrium Green's function formalism in uncoupled-mode space has been developed to extract device parameters in the presence of electron-phonon interactions. Electron-phonon scattering is accounted for by adopting the self-consistent Born approximation and using the deformation potential theory.

  11. Optical driven electromechanical transistor based on tunneling effect.

    Science.gov (United States)

    Jin, Leisheng; Li, Lijie

    2015-04-15

    A new electromechanical transistor based on an optical driven vibrational ring structure has been postulated. In the device, optical power excites the ring structure to vibrate, which acts as the shuttle transporting electrons from one electrode to the other forming the transistor. The electrical current of the transistor is adjusted by the optical power. Coupled opto-electro-mechanical simulation has been performed. It is shown from the dynamic analysis that the stable working range of the transistor is much wider than that of the optical wave inside the cavity, i.e., the optical resonance enters nonperiodic states while the mechanical vibration of the ring is still periodic.

  12. Integral optoelectronic switch based on DMOS-transistors

    Directory of Open Access Journals (Sweden)

    Politanskyy L. F.

    2008-12-01

    Full Text Available The characteristics of optoelectronic couples photodiodes-DMOS-transistor are studied in the paper. There was developed a mathematical model of volt-ampere characteristic of the given optoelectronic couple which allows to determine interrelation of its electric parameters with constructive and electrophysical parameters of photodiodes and DMOS-transistors. There was suggested a construction of integral optoelectronic switch, based on DMOS-transistors on the silicon with dielectric insulation structures (SDIS. Possible is the optic control of executive devices, connected both to the source and drain circuits of the switching transistor.

  13. Npn double heterostructure bipolar transistor with ingaasn base region

    Science.gov (United States)

    Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

    2004-07-20

    An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

  14. A PWM transistor inverter for an ac electric vehicle drive

    Science.gov (United States)

    Slicker, J. M.

    1981-01-01

    A prototype system consisting of closely integrated motor, inverter, and transaxle has been built in order to demonstrate the feasibility of a three-phase ac transistorized inverter for electric vehicle applications. The microprocessor-controlled inverter employs monolithic power transistors to drive an oil-cooled, three-phase induction traction motor at a peak output power of 30 kW from a 144 V battery pack. Transistor safe switching requirements are discussed, and a circuit is presented for recovering trapped snubber inductor energy at transistor turn-off.

  15. From transistor to trapped-ion computers for quantum chemistry

    Science.gov (United States)

    Yung, M.-H.; Casanova, J.; Mezzacapo, A.; McClean, J.; Lamata, L.; Aspuru-Guzik, A.; Solano, E.

    2014-01-01

    Over the last few decades, quantum chemistry has progressed through the development of computational methods based on modern digital computers. However, these methods can hardly fulfill the exponentially-growing resource requirements when applied to large quantum systems. As pointed out by Feynman, this restriction is intrinsic to all computational models based on classical physics. Recently, the rapid advancement of trapped-ion technologies has opened new possibilities for quantum control and quantum simulations. Here, we present an efficient toolkit that exploits both the internal and motional degrees of freedom of trapped ions for solving problems in quantum chemistry, including molecular electronic structure, molecular dynamics, and vibronic coupling. We focus on applications that go beyond the capacity of classical computers, but may be realizable on state-of-the-art trapped-ion systems. These results allow us to envision a new paradigm of quantum chemistry that shifts from the current transistor to a near-future trapped-ion-based technology. PMID:24395054

  16. Ballistic Resistance of Honeycomb Sandwich Panels under In-Plane High-Velocity Impact

    Science.gov (United States)

    Yang, Shu; Wang, Dong; Yang, Li-Jun

    2013-01-01

    The dynamic responses of honeycomb sandwich panels (HSPs) subjected to in-plane projectile impact were studied by means of explicit nonlinear finite element simulations using LS-DYNA. The HSPs consisted of two identical aluminum alloy face-sheets and an aluminum honeycomb core featuring three types of unit cell configurations (regular, rectangular-shaped, and reentrant hexagons). The ballistic resistances of HSPs with the three core configurations were first analyzed. It was found that the HSP with the reentrant auxetic honeycomb core has the best ballistic resistance, due to the negative Poisson's ratio effect of the core. Parametric studies were then carried out to clarify the influences of both macroscopic (face-sheet and core thicknesses, core relative density) and mesoscopic (unit cell angle and size) parameters on the ballistic responses of the auxetic HSPs. Numerical results show that the perforation resistant capabilities of the auxetic HSPs increase as the values of the macroscopic parameters increase. However, the mesoscopic parameters show nonmonotonic effects on the panels' ballistic capacities. The empirical equations for projectile residual velocities were formulated in terms of impact velocity and the structural parameters. It was also found that the blunter projectiles result in higher ballistic limits of the auxetic HSPs. PMID:24187526

  17. Friction Stir Weld Failure Mechanisms in Aluminum-Armor Structures Under Ballistic Impact Loading Conditions

    Science.gov (United States)

    Grujicic, M.; Pandurangan, B.; Arakere, A.; Yen, C.-F.; Cheeseman, B. A.

    2013-01-01

    A critical assessment is carried out of the microstructural changes in respect of the associated reductions in material mechanical properties and of the attendant ballistic-impact failure mechanisms in prototypical friction stir welding (FSW) joints found in armor structures made of high-performance aluminum alloys (including solution-strengthened and age-hardenable aluminum alloy grades). It is argued that due to the large width of FSW joints found in thick aluminum-armor weldments, the overall ballistic performance of the armor is controlled by the ballistic limits of its weld zones (e.g., heat-affected zone, the thermomechanically affected zone, the nugget, etc.). Thus, in order to assess the overall ballistic survivability of an armor weldment, one must predict/identify welding-induced changes in the material microstructure and properties, and the operative failure mechanisms in different regions of the weld. Toward this end, a procedure is proposed in the present study which combines the results of the FSW process modeling, basic physical-metallurgy principles concerning microstructure/property relations, and the fracture mechanics concepts related to the key blast/ballistic-impact failure modes. The utility of this procedure is demonstrated using the case of a solid-solution strengthened and cold-worked aluminum alloy armor FSW-weld test structure.

  18. Interaction of a ballistic probe with gaseous media

    International Nuclear Information System (INIS)

    Kucerovsky, Zden; Greason, William D

    2008-01-01

    Free-flying metal probes are used to determine charge densities in gaseous media containing free charge or low density plasma. The trajectory of the probe is ensured either by gravity or by propelling the probe to a certain velocity at the launch site. While travelling, the probe charge changes from its launch-site magnitude to that related to the space charge density existing along the trajectory. The degree to which the probe's arrival-site charge magnitude matches the space charge density in the area of interest depends on the probe shape and on the charge exchange processes between the probe body and the medium. The paper studies a probe acting as a free-flying charge carrier in air, and discusses the problems that may lead to an imbalance between the charge collected by the probe in the area of interest and the charge measured at the arrival site. The analysis and the described experiments are of the ballistic type: a small, triboelectrically pre-charged metal probe was propelled on a horizontal path, and the charge carried by the probe was measured at several points along the trajectory by means of contact-free induction rings; the initial and final charges were determined by static Faraday cups. A charge disparity was found under certain conditions, and its degree explained by the effects of the charge carrier potential. The studied probe charges ranged from 10 to 50 nF, and the fly-times needed to cross a one-meter path ranged from 20 to 40 ms. The probe to gas charge exchange experiments and their analysis yielded conditions under which the probe lost approximately 10 % of its charge. The results of our study may be of interest to those who intend to use the free-flying probe technique for the determination of space charge density.

  19. Feed-forward motor control of ultrafast, ballistic movements.

    Science.gov (United States)

    Kagaya, K; Patek, S N

    2016-02-01

    To circumvent the limits of muscle, ultrafast movements achieve high power through the use of springs and latches. The time scale of these movements is too short for control through typical neuromuscular mechanisms, thus ultrafast movements are either invariant or controlled prior to movement. We tested whether mantis shrimp (Stomatopoda: Neogonodactylus bredini) vary their ultrafast smashing strikes and, if so, how this control is achieved prior to movement. We collected high-speed images of strike mechanics and electromyograms of the extensor and flexor muscles that control spring compression and latch release. During spring compression, lateral extensor and flexor units were co-activated. The strike initiated several milliseconds after the flexor units ceased, suggesting that flexor activity prevents spring release and determines the timing of strike initiation. We used linear mixed models and Akaike's information criterion to serially evaluate multiple hypotheses for control mechanisms. We found that variation in spring compression and strike angular velocity were statistically explained by spike activity of the extensor muscle. The results show that mantis shrimp can generate kinematically variable strikes and that their kinematics can be changed through adjustments to motor activity prior to the movement, thus supporting an upstream, central-nervous-system-based control of ultrafast movement. Based on these and other findings, we present a shishiodoshi model that illustrates alternative models of control in biological ballistic systems. The discovery of feed-forward control in mantis shrimp sets the stage for the assessment of targets, strategic variation in kinematics and the role of learning in ultrafast animals. © 2016. Published by The Company of Biologists Ltd.

  20. Injury representation against ballistic threats using three novel numerical models.

    Science.gov (United States)

    Breeze, Johno; Fryer, R; Pope, D; Clasper, J

    2017-06-01

    Injury modelling of ballistic threats is a valuable tool for informing policy on personal protective equipment and other injury mitigation methods. Currently, the Ministry of Defence (MoD) and Centre for Protection of National Infrastructure (CPNI) are focusing on the development of three interlinking numerical models, each of a different fidelity, to answer specific questions on current threats. High-fidelity models simulate the physical events most realistically, and will be used in the future to test the medical effectiveness of personal armour systems. They are however generally computationally intensive, slow running and much of the experimental data to base their algorithms on do not yet exist. Medium fidelity models, such as the personnel vulnerability simulation (PVS), generally use algorithms based on physical or engineering estimations of interaction. This enables a reasonable representation of reality and greatly speeds up runtime allowing full assessments of the entire body area to be undertaken. Low-fidelity models such as the human injury predictor (HIP) tool generally use simplistic algorithms to make injury predictions. Individual scenarios can be run very quickly and hence enable statistical casualty assessments of large groups, where significant uncertainty concerning the threat and affected population exist. HIP is used to simulate the blast and penetrative fragmentation effects of a terrorist detonation of an improvised explosive device within crowds of people in metropolitan environments. This paper describes the collaboration between MoD and CPNI using an example of all three fidelities of injury model and to highlight future areas of research that are required. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://www.bmj.com/company/products-services/rights-and-licensing/.

  1. Developmental framework to validate future designs of ballistic neck protection.

    Science.gov (United States)

    Breeze, J; Midwinter, M J; Pope, D; Porter, K; Hepper, A E; Clasper, J

    2013-01-01

    The number of neck injuries has increased during the war in Afghanistan, and they have become an appreciable source of mortality and long-term morbidity for UK servicemen. A three-dimensional numerical model of the neck is necessary to allow simulation of penetrating injury from explosive fragments so that the design of body armour can be optimal, and a framework is required to validate and describe the individual components of this program. An interdisciplinary consensus group consisting of military maxillofacial surgeons, and biomedical, physical, and material scientists was convened to generate the components of the framework, and as a result it incorporates the following components: analysis of deaths and long-term morbidity, assessment of critical cervical structures for incorporation into the model, characterisation of explosive fragments, evaluation of the material of which the body armour is made, and mapping of the entry sites of fragments. The resulting numerical model will simulate the wound tract produced by fragments of differing masses and velocities, and illustrate the effects of temporary cavities on cervical neurovascular structures. Using this framework, a new shirt to be worn under body armour that incorporates ballistic cervical protection has been developed for use in Afghanistan. New designs of the collar validated by human factors and assessment of coverage are currently being incorporated into early versions of the numerical model. The aim of this paper is to describe this developmental framework and provide an update on the current progress of its individual components. Crown Copyright © 2012. Published by Elsevier Ltd. All rights reserved.

  2. Modeling Ballistic Penetration of Multi-Layered Targets

    Science.gov (United States)

    Zavattieri, Pablo Daniel; Dante Espinosa, Horacio; Dwivedi, Sunil

    1999-06-01

    There have been several efforts to experimentally design suitable multi-layered ceramic targets. The focus of these experiments has been to minimize ceramic damage and flow to maximize penetration resistance. But the challenge of developing effective ceramic armor systems by experiments alone is a difficult task. In general, experiments do not always provide direct information on material behavior. The implementation of an iterative computational/experimental procedure requires reliable material models incorporating microfailure and macrofracture of ceramics and penetrator materials. A dynamic finite element analysis of large displacements, high strain rate deformation behavior of materials is presented in total lagrangian coordinates. An isochoric finite deformation plasticity model for metals, including rate and temperature effecs, and a continuum/discrete damage model capable of capturing fragmentation at two size scales is derived by combining continuum damage model and a discrete damage model for brittle failure. It is assumed that size and distribution of potential fragments are known a-priori, through either experimental findings or material properties, and that macrocracks can nucleate and propagate along the boundaries of these potential fragments. The finite deformation continuum multiple-plane microcracking damage model accounts for microcracks within fragments and interface elements, with cohesive strength, between potential fragments describe the behavior of macrocracks. A versatile adaptive remeshing technique has been implemented to have well conditioned fine mesh in zones with high rate of inelastic deformation and coarse mesh in zones with low rate of inelastic deformation. The results are presented for the ballistic penetration of multi-layered ceramic/steel targets using the above model. The effect of ceramic materials and target configuration design for ceramic confinement on the response of multi-layered targets subjected to high velocity

  3. Nanopore extended field-effect transistor for selective single-molecule biosensing.

    Science.gov (United States)

    Ren, Ren; Zhang, Yanjun; Nadappuram, Binoy Paulose; Akpinar, Bernice; Klenerman, David; Ivanov, Aleksandar P; Edel, Joshua B; Korchev, Yuri

    2017-09-19

    There has been a significant drive to deliver nanotechnological solutions to biosensing, yet there remains an unmet need in the development of biosensors that are affordable, integrated, fast, capable of multiplexed detection, and offer high selectivity for trace analyte detection in biological fluids. Herein, some of these challenges are addressed by designing a new class of nanoscale sensors dubbed nanopore extended field-effect transistor (nexFET) that combine the advantages of nanopore single-molecule sensing, field-effect transistors, and recognition chemistry. We report on a polypyrrole functionalized nexFET, with controllable gate voltage that can be used to switch on/off, and slow down single-molecule DNA transport through a nanopore. This strategy enables higher molecular throughput, enhanced signal-to-noise, and even heightened selectivity via functionalization with an embedded receptor. This is shown for selective sensing of an anti-insulin antibody in the presence of its IgG isotype.Efficient detection of single molecules is vital to many biosensing technologies, which require analytical platforms with high selectivity and sensitivity. Ren et al. combine a nanopore sensor and a field-effect transistor, whereby gate voltage mediates DNA and protein transport through the nanopore.

  4. Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

    KAUST Repository

    Han, Yang

    2018-03-13

    Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.

  5. Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors

    International Nuclear Information System (INIS)

    Klein, P B; Binari, S C

    2003-01-01

    This review is concerned with the characterization and identification of the deep centres that cause current collapse in nitride-based field effect transistors. Photoionization spectroscopy is an optical technique that has been developed to probe the characteristics of these defects. Measured spectral dependences provide information on trap depth, lattice coupling and on the location of the defects in the device structure. The spectrum of an individual trap may also be regarded as a 'fingerprint' of the defect, allowing the trap to be followed in response to the variation of external parameters. The basis for these measurements is derived through a modelling procedure that accounts quantitatively for the light-induced drain current increase in the collapsed device. Applying the model to fit the measured variation of drain current increase with light illumination provides an estimate of the concentrations and photoionization cross-sections of the deep defects. The results of photoionization studies of GaN metal-semiconductor field effect transistors and AlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic chemical vapour deposition (MOCVD) are presented and the conclusions regarding the nature of the deep traps responsible are discussed. Finally, recent photoionization studies of current collapse induced by short-term (several hours) bias stress in AlGaN/GaN HEMTs are described and analysed for devices grown by both MOCVD and molecular beam epitaxy. (topical review)

  6. Modeling and Simulation of Ballistic Penetration of Ceramic-Polymer-Metal Layered Systems

    Directory of Open Access Journals (Sweden)

    J. D. Clayton

    2015-01-01

    Full Text Available Numerical simulations and analysis of ballistic impact and penetration by tungsten alloy rods into composite targets consisting of layers of aluminum nitride ceramic tile(s, polymer laminae, and aluminum backing are conducted over a range of impact velocities on the order of 1.0 to 1.2 km/s. Computational results for ballistic efficiency are compared with experimental data from the literature. Simulations and experiments both demonstrate a trend of decreasing ballistic efficiency with increasing impact velocity. Predicted absolute residual penetration depths often exceed corresponding experimental values. The closest agreement between model and experiment is obtained when polymer interfaces are not explicitly represented in the numerical calculations, suggesting that the current model representation of such interfaces may be overly compliant. The present results emphasize the importance of proper resolution of geometry and constitutive properties of thin layers and interfaces between structural constituents for accurate numerical evaluation of performance of modern composite protection systems.

  7. Localization and Ballistic Diffusion for the Tempered Fractional Brownian-Langevin Motion

    Science.gov (United States)

    Chen, Yao; Wang, Xudong; Deng, Weihua

    2017-10-01

    This paper discusses the tempered fractional Brownian motion (tfBm), its ergodicity, and the derivation of the corresponding Fokker-Planck equation. Then we introduce the generalized Langevin equation with the tempered fractional Gaussian noise for a free particle, called tempered fractional Langevin equation (tfLe). While the tfBm displays localization diffusion for the long time limit and for the short time its mean squared displacement (MSD) has the asymptotic form t^{2H}, we show that the asymptotic form of the MSD of the tfLe transits from t^2 (ballistic diffusion for short time) to t^{2-2H}, and then to t^2 (again ballistic diffusion for long time). On the other hand, the overdamped tfLe has the transition of the diffusion type from t^{2-2H} to t^2 (ballistic diffusion). The tfLe with harmonic potential is also considered.

  8. Considerations on Dop (Depth Of Penetration) Test for Evaluation of Ceramics Materials Used in Ballistic Protection

    Science.gov (United States)

    Popa, Ioan-Dan; Dobriţa, Florin

    2017-12-01

    Tremendous amount of funds and other resorces were invested in studying the response of ceramic materials under ballistic impact, the main goal being to find a way to increase the protection of soldiers and the vehicles used in the modern battlespace. Using of ceramic materials especially carbon based (carbides), nitrogen based (nitrides) and oxygen based (oxides) ceramics in order to increase the protection level of ballistic equipment could be, sometimes, a big challenge when trying to use the proper test in order to evaluate and compare their performances. The role of the tests is to provide a better understanding of their response in different situations and, as a consequence, to make them more efficient as armour components through future improvements. The paper presents shortly the main tests which are used and eventually standardised for evaluating the ballistic behaviour of the ceramics and other armour components, with a special focus to DOP (Depth of Penetration) Tests.

  9. Dynamic Load Measurement of Ballistic Gelatin Impact Using an Instrumented Tube

    Science.gov (United States)

    Seidt, J. D.; Periira, J. M.; Hammer, J. T.; Gilat, A.; Ruggeri, C. R.

    2012-01-01

    Bird strikes are a common problem for the aerospace industry and can cause serious damage to an aircraft. Ballistic gelatin is frequently used as a surrogate for actual bird carcasses in bird strike tests. Numerical simulations of these tests are used to supplement experimental data, therefore it is necessary to use numerical modeling techniques that can accurately capture the dynamic response of ballistic gelatin. An experimental technique is introduced to validate these modeling techniques. A ballistic gelatin projectile is fired into a strike plate attached to a 36 in. long sensor tube. Dynamic load is measured at two locations relative to the strike plate using strain gages configured in a full Wheatstone bridge. Data from these experiments are used to validate a gelatin constitutive model. Simulations of the apparatus are analyzed to investigate its performance.

  10. A discussion on the usefulness of a shared European ballistic image database.

    Science.gov (United States)

    De Ceuster, J; Hermsen, R; Mastaglio, M; Nennstiel, R

    2012-12-01

    The introduction of electronic systems into the comparison of weapon marks in the mid 1990s caused a revolution in the discipline of "forensic ballistics". Most European states now use this technology to search their national open case files. Globalisation of crime and the loss of effective border controls have made the idea of a unified European ballistic system seem logical. The article critically considers the requirements and possible outcomes of such a system. Based on the experience of forensic practitioners it seems probable that a shared European electronic ballistic system will be of a very limited value at present. Further improvements of existing systems to reach compatibility are encouraged. Copyright © 2011 Forensic Science Society. Published by Elsevier Ireland Ltd. All rights reserved.

  11. Ambipolar MoS2 Thin Flake Transistors

    NARCIS (Netherlands)

    Zhang, Yijin; Ye, Jianting; Matsuhashi, Yusuke; Iwasa, Yoshihiro

    Field effect transistors (FETs) made of thin flake single crystals isolated from layered materials have attracted growing interest since the success of graphene. Here, we report the fabrication of an electric double layer transistor (EDLT, a FET gated by ionic liquids) using a thin flake of MoS2, a

  12. The Smallest Transistor-Based Nonautonomous Chaotic Circuit

    DEFF Research Database (Denmark)

    Lindberg, Erik; Murali, K.; Tamasevicius, Arunas

    2005-01-01

    A nonautonomous chaotic circuit based on one transistor, two capacitors, and two resistors is described. The mechanism behind the chaotic performance is based on “disturbance of integration.” The forward part and the reverse part of the bipolar transistor are “fighting” about the charging...

  13. Light-emitting ambipolar organic heterostructure field-effect transistor

    NARCIS (Netherlands)

    Rost, Constance; Karg, Siegfried; Riess, Walter; Loi, Maria Antonietta; Murgia, Mauro; Muccini, Michele

    2004-01-01

    We have investigated ambipolar charge injection and transport in organic field-effect transistors (OFETs) as prerequisites for a light-emitting organic field-effect transistor (LEOFET). OFETs containing a single material as active layer generally function either as a p- or an n-channel device.

  14. Advanced Organic Permeable-Base Transistor with Superior Performance.

    Science.gov (United States)

    Klinger, Markus P; Fischer, Axel; Kaschura, Felix; Scholz, Reinhard; Lüssem, Björn; Kheradmand-Boroujeni, Bahman; Ellinger, Frank; Kasemann, Daniel; Leo, Karl

    2015-12-16

    An optimized vertical organic permeable-base transistor (OPBT) competing with the best organic field-effect transistors in performance, while employing low-cost fabrication techniques, is presented. The OPBT stands out by its excellent power efficiency at the highest frequencies. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. On the 50th Anniversary of the Transistor

    DEFF Research Database (Denmark)

    Stassen, Flemming

    1997-01-01

    This paper celebrates the 50th anniversary of the invention of the bipolar transistor in 1947. Combined with the inventions of integration and planar technology, the invention of the transistor marks the beginning of a period of unprecedented growth, the industrialization of electronics....

  16. Very High Frequency Two-Port Characterization of Transistors

    DEFF Research Database (Denmark)

    Hertel, Jens Christian; Nour, Yasser; Jørgensen, Ivan Harald Holger

    To properly use transistors in VHF converters, they need to be characterized under similar conditions. This research presents a two-port method, using a network analyzer (NWA) with a S-port setup. The method is a one-shot method, providing fast results of the off-state parasitics of the transistors....

  17. High mobility polymer gated organic field effect transistor using zinc ...

    Indian Academy of Sciences (India)

    Organic semiconductor; field effect transistor; phthalocyanine; high mobility. Abstract. Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film prepared by chemical vapour deposition was used as the organic gate insulator. The annealing of the samples was ...

  18. The Complete Semiconductor Transistor and Its Incomplete Forms

    Science.gov (United States)

    Binbin, Jie; Chih-Tang, Sah

    2009-06-01

    This paper describes the definition of the complete transistor. For semiconductor devices, the complete transistor is always bipolar, namely, its electrical characteristics contain both electron and hole currents controlled by their spatial charge distributions. Partially complete or incomplete transistors, via coined names or/and designed physical geometries, included the 1949 Shockley p/n junction transistor (later called Bipolar Junction Transistor, BJT), the 1952 Shockley unipolar 'field-effect' transistor (FET, later called the p/n Junction Gate FET or JGFET), as well as the field-effect transistors introduced by later investigators. Similarities between the surface-channel MOS-gate FET (MOSFET) and the volume-channel BJT are illustrated. The bipolar currents, identified by us in a recent nanometer FET with 2-MOS-gates on thin and nearly pure silicon base, led us to the recognition of the physical makeup and electrical current and charge compositions of a complete transistor and its extension to other three or more terminal signal processing devices, and also the importance of the terminal contacts.

  19. Effects of equal channel angular extrusion on microstructure, strength and ballistic performance of AA5754 plates

    DEFF Research Database (Denmark)

    Mishin, Oleg; Hong, Chuanshi; Toftegaard, Helmuth Langmaack

    2014-01-01

    The microstructure, hardness, tensile properties and ballistic performance have been investigated in thick plates of the AA5754 alloy both in a coarse-grained as-received condition and after 4 passes of equal channel angular extrusion (ECAE) conducted at elevated temperatures. It is found that ECAE...... refines the microstructure to an average subgrain size of 0.3 μm, which results in significantly increased hardness and strength. Although ductility decreases due to ECAE, the uniform elongation is still fairly large, ~10%. The ballistic performance of the ECAE-processed material is found...

  20. Ballistic Behaviour of Thick Steel Armour Plate under Oblique Impact: Experimental Investigation .

    OpenAIRE

    S. N. Dikshit

    1998-01-01

    The ballistic behaviour of thick steel amlOW- plate has been investigated at different obliquity when impacted by an ogive-shaped steel projectile. The ballistic experiments have been conducted in the velocity range 300-800 m/s. Both the thickness of the target plate and the diameter of the projectile were 20 Inm. At 30 and 45. obliquity 20 mm plate provides full protection at 800 m/s, whereas at 0 and 15. obliquity, the plate provides protection up to 600 m/s. At 15 and 30° obliquity, the pl...

  1. Ballistic Behaviour of Thick Steel Armour Plate under Oblique Impact : Experimental Investigation II

    OpenAIRE

    S. N. Dikshit

    1999-01-01

    The ballistic behaviour of thick steel armour plate at different obliquities has been investigated. Ballistic experiments were conducted in the velocity range 300-800 mls at 0°, 15°, 30° and 45° obliquity .A steel, conical projectile or 6.1 mm diameter was impacted on a 10 mm thick steel armour plate. At 30° and 45° obliquity, the plate offers protection up to a striking velocity of 800 mls. At zero obliquity, the plate provides protection below 6~ m/s. The depth of penetration decreases with...

  2. Ballistic Behaviour of Tempered Steel Armour Plates under Plane Strain Condition .

    OpenAIRE

    S. N. Dikshit

    1998-01-01

    The present investigation deals with the ballistic behaviour of tempered steel armour plates under plane strain condition at normal angle of attack. A conical-shaped steel projectile of 6.1 mmdiameter was impacted on 20 mm thick steel annour plates of 350, 450 and 550 Hv hardness, in the velocity range 200 -700 m/s at zero obliquity. Ballistic performance measured in terms of the depthof penetration indicates that, under plane strain condition, behavio1Do" f 550 Hv steel plate is better than ...

  3. Effect of tempering time on the ballistic performance of a high strength armour steel

    OpenAIRE

    Pradipta Kumar Jena; Ponguru Senthil P.; Siva Kumar K.

    2016-01-01

    The investigation describes and analyses the effect of tempering time on the mechanical and ballistic performance of a high strength armour steel. The steel is subjected to tempering at 300 °C for 2, 24 and 48 h. A marginal variation in strength and hardness is observed with increase in tempering time, whereas ductility and Charpy impact values are found to be decreasing. Ballistic performance of the samples are evaluated by impacting 7.62 mm and 12.7 mm armour piercing projectiles at 0° angl...

  4. A Systems Approach to Finding Cost-Effective Alternatives to European Ballistic Missile Defense

    Science.gov (United States)

    2013-09-01

    has holes in its ability to cover the entire region as required. What are the existing approaches to ballistic missile defense in Europe? 4. What Are...however, this report focuses on ballistic missiles which use stellar or inertial guidance systems which are not subject to electromagnetic...location as the Baseline system (35.6° N, 32.5° E) while the other was placed north of Turkey in the Black Sea (41.5° N, 38.1° E). Each Aegis ship was

  5. Models for Ballistic Wind Measurement Error Analysis. Volume II. Users’ Manual.

    Science.gov (United States)

    1983-01-01

    TEST CHART NATIONAL li ’A il (If IANP) ARDl A -CR-83-0008-1 Reports Control Symbol OSO - 1366 MODELS FOR BALLISTIC WIND MEASUREMENTERROR ANALYSIS...AD-A129 360 MODELS FOR BALLSTIC WIND MEASUREMENT ERROR ANALYSIS VO UME 11USERS’ MAN..U) NEW REXICO STATE UNIV LAS U SS CRUCES PHYSICAL SCIENCE LAR...ACCESSION NO. 3. RECIPIENT’S CATALOG NUMBER SASL-CR-83-0008-1 4. TITLE (and Subtitle) 5 TYPE OF REPORT & PERIOD COVERED MODELS FOR BALLISTIC WIND

  6. A ballistics module as a part of the fire control system

    Directory of Open Access Journals (Sweden)

    Branka R. Luković

    2013-10-01

    Full Text Available This article presents a ballistics module as a part of the fire control system of weapons for fire support (mortars, artillery weapons and rocket launchers. The software is "open" with the prominence of autonomy work. It can be modulated and adapted on the user demand. Moreover, it is independent of the hardware base. Introduction: The fire control system is based on a ballistic module (BM which determines the firing data for each weapon tool in the battery. Ballistic calculations, for the given position of the target in relation to the position of tools in the given weather conditions, determine firing data (elevation, direction, timing and locating devices so that the missile seems to cause the desired effect. This paper gives the basic information about the features the BM performs and the manner of their implementation in the fire control system without going into algorithmic solution procedures. Ballistic problem in the fire control system: Ballistic calculation is based on a trajectory calculation of all kinds of projectiles (current, time-fuze, illuminating, smoke, with conventional propulsion, rocket, with built-in gas generator, etc.. Instead of previous solutions, where a trajectory calculation of the fire control system was done by approximate methods, in this BM the trajectory calculation is made by the same model with the same data as for a weapon and ammunition in the process of creating a firing table. The data used in the fire control system are made simultaneously with the preparation of firing tables for a particular tool and associated ammunition,. A modified model of particle, standardized at the NATO level, is also used. Taking into account the meteorological situation, before the trajectory calculation is done, a relative position of the target in relation to the position of the tool should be determined. A selection or loading check is carried out (possibility of reaching a given target as well as the point at which the

  7. On the influence of particle morphology on the post-impact ballistic response of ceramic armour materials

    Science.gov (United States)

    Hameed, Amer; Appleby-Thomas, Gareth; Wood, David; Jaansalu, Kevin

    2015-06-01

    Recent studies have shown evidence that the ballistic-resistance of fragmented (comminuted) ceramics is independent of the original strength of the material. In particular, experimental investigations into the ballistic behaviour of such fragmented ceramics have indicated that this response is correlated to shattered ceramic morphology. This suggests that careful control of ceramic microstructure - and therefore failure paths - might provide a route to optimise post-impact ballistic performance, thereby enhancing multi-hit capability. In this study, building on previous in-house work, ballistic tests were conducted using pre-formed `fragmented-ceramic' analogues based around three morphologically differing (but chemically identical) alumina feedstock materials compacted into target `pucks. In an evolution of previous work, variation of target thickness provided additional insight into an apparent morphology-based contribution to ballistic response.

  8. Problem of the reference height of the projectile trajectory as a reduced meteo-ballistic weighting factor

    Directory of Open Access Journals (Sweden)

    Vladimir Cech

    2014-06-01

    Full Text Available This paper deals with the issue of preparation of the aiming angles with the use of tabular firing tables and needed determination of the ballistic elements μB (ballistic wind wB, wxB, wZB, ballistic (virtual temperature τB, ballistic density ρB from the standardized met messages. The weighting factors are used for the calculation of ballistic elements μB that are incorporated into the trajectory calculations characteristics of weapon and ammunition. Two different methodologies practically used in the praxis are analysed and compared. For the comparison of the two methodologies the reference height of trajectory determined from the weighting factor functions is employed. On the basis of the analyses conducted, the potential for further increase in accuracy of these aiming angles preparation methods is pointed out.

  9. Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

    Science.gov (United States)

    Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing

    2016-08-24

    Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

  10. Single-Molecule Transistor from Graphene Nanoelectrodes and Novel Functional Materials From Self-assembly

    Science.gov (United States)

    Xu, Qizhi

    This thesis introduces a new strategy to fabricate single molecular transistor by utilizing the covalent chemistry to reconnect the molecule with the electroburnt graphene nanogap. We studied the effect of coupling chemistry and molecular length on the efficiency of reconnection between the molecule and the graphene. With this technique, we are also able to observe the Coulomb Blockade phenomenon, which is a characteristics of single-electron transistors. The high yield and versatility of this approach augur well for creating a new generation of sensors, switches, and other functional devices using graphene contacts. This thesis also introduces a new type of organic single-crystal p-n heterojunction inspired from the ball-and-socket shape-complementarity between fullerene and contorted dibenzotetrathienocoronene (c-DBTTC). We studied the influence of temperature, pressure, and time on the self-assembly process of contorted dibenzotetrathienocoronene on the as-grown fullerene crystals. We also utilized fluorescence microscopy to investigate the charge transfer in this type of p-n heterojunction. Finally, this thesis introduces one-dimensional and two-dimensional programming in solid-state materials from superatom macrocycles. We find that the linkers that bridges the two superatoms determine the distance and electronic coupling between the two superatoms in the macrocycle, which in turn determines the way they self-assembled in the solid-state materials. The thesis is composed of four chapters. The first chapter introduces why we are in terested in molecular transistors and new functional materials, and what has been done so far. The second chapter described the approach we developed to assemble single molecule into circuits with graphene electrodes. The third chapter details the method to fabricate the organic single-crystal C60-DBTTC p-n heterojunction, which is of great importance to understand their charge transfer process. The last chapter introduced a new

  11. Field effect transistor based on light-emitting polymers and its integration with light-emitting diode

    Science.gov (United States)

    Meng, Hsin-Fei; Horng, Sheng-Fu

    2003-03-01

    Field-effect transistors based on poly(2-methoxy-5(2'-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) and other light-emitting conjugated polymers are fabricated on glass for easy integration with polymer LED. In the integrated device the polymer LED (pixel) and its driving transistor share the same polymer layer as their active semiconductor, with much simplified structures. Despite of the amorphous nature of the polymer film, the transistors can supply up to one micro Ampere of electric current and can be operated under gate modulation of 1 kHz. The hole mobility along the source/drain channel parallel to the glass substrate is found to be 100-1000 times larger than the perpendicular mobility for transport in the sandwich structures, presumably due to the extended chain conformation in spin-coated films. The molecular weight of the polymers is identified as an important factor for the carrier mobility and characteristics of the transistors.

  12. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

    International Nuclear Information System (INIS)

    Yeluri, Ramya; Lu, Jing; Keller, Stacia; Mishra, Umesh K.; Hurni, Christophe A.; Browne, David A.; Speck, James S.; Chowdhury, Srabanti

    2015-01-01

    The Current Aperture Vertical Electron Transistor (CAVET) combines the high conductivity of the two dimensional electron gas channel at the AlGaN/GaN heterojunction with better field distribution offered by a vertical design. In this work, CAVETs with buried, conductive p-GaN layers as the current blocking layer are reported. The p-GaN layer was regrown by metalorganic chemical vapor deposition and the subsequent channel regrowth was done by ammonia molecular beam epitaxy to maintain the p-GaN conductivity. Transistors with high ON current (10.9 kA/cm 2 ) and low ON-resistance (0.4 mΩ cm 2 ) are demonstrated. Non-planar selective area regrowth is identified as the limiting factor to transistor breakdown, using planar and non-planar n/p/n structures. Planar n/p/n structures recorded an estimated electric field of 3.1 MV/cm, while non-planar structures showed a much lower breakdown voltage. Lowering the p-GaN regrowth temperature improved breakdown in the non-planar n/p/n structure. Combining high breakdown voltage with high current will enable GaN vertical transistors with high power densities

  13. Diakoptical reliability analysis of transistorized systems

    International Nuclear Information System (INIS)

    Kontoleon, J.M.; Lynn, J.W.; Green, A.E.

    1975-01-01

    Limitations both on high-speed core availability and computation time required for assessing the reliability of large-sized and complex electronic systems, such as used for the protection of nuclear reactors, are very serious restrictions which continuously confront the reliability analyst. Diakoptic methods simplify the solution of the electrical-network problem by subdividing a given network into a number of independent subnetworks and then interconnecting the solutions of these smaller parts by a systematic process involving transformations based on connection-matrix elements associated with the interconnecting links. However, the interconnection process is very complicated and it may be used only if the original system has been cut in such a manner that a relation can be established between the constraints appearing at both sides of the cut. Also, in dealing with transistorized systems, one of the difficulties encountered is that of modelling adequately their performance under various operating conditions, since their parameters are strongly affected by the imposed voltage and current levels. In this paper a new interconnection approach is presented which may be of use in the reliability analysis of large-sized transistorized systems. This is based on the partial optimization of the subdivisions of the torn network as well as on the optimization of the torn paths. The solution of the subdivisions is based on the principles of algebraic topology, with an algebraic structure relating the physical variables in a topological structure which defines the interconnection of the discrete elements. Transistors, and other nonlinear devices, are modelled using their actual characteristics, under normal and abnormal operating conditions. Use of so-called k factors is made to facilitate accounting for use of electrical stresses. The approach is demonstrated by way of an example. (author)

  14. Functional organic field-effect transistors.

    Science.gov (United States)

    Guo, Yunlong; Yu, Gui; Liu, Yunqi

    2010-10-25

    Functional organic field-effect transistors (OFETs) have attracted increasing attention in the past few years due to their wide variety of potential applications. Research on functional OFETs underpins future advances in organic electronics. In this review, different types of functional OFETs including organic phototransistors, organic memory FETs, organic light emitting FETs, sensors based on OFETs and other functional OFETs are introduced. In order to provide a comprehensive overview of this field, the history, current status of research, main challenges and prospects for functional OFETs are all discussed.

  15. Hafnium transistor process design for neural interfacing.

    Science.gov (United States)

    Parent, David W; Basham, Eric J

    2009-01-01

    A design methodology is presented that uses 1-D process simulations of Metal Insulator Semiconductor (MIS) structures to design the threshold voltage of hafnium oxide based transistors used for neural recording. The methodology is comprised of 1-D analytical equations for threshold voltage specification, and doping profiles, and 1-D MIS Technical Computer Aided Design (TCAD) to design a process to implement a specific threshold voltage, which minimized simulation time. The process was then verified with a 2-D process/electrical TCAD simulation. Hafnium oxide films (HfO) were grown and characterized for dielectric constant and fixed oxide charge for various annealing temperatures, two important design variables in threshold voltage design.

  16. Pass-transistor asynchronous sequential circuits

    Science.gov (United States)

    Whitaker, Sterling R.; Maki, Gary K.

    1989-01-01

    Design methods for asynchronous sequential pass-transistor circuits, which result in circuits that are hazard- and critical-race-free and which have added degrees of freedom for the input signals, are discussed. The design procedures are straightforward and easy to implement. Two single-transition-time state assignment methods are presented, and hardware bounds for each are established. A surprising result is that the hardware realizations for each next state variable and output variable is identical for a given flow table. Thus, a state machine with N states and M outputs can be constructed using a single layout replicated N + M times.

  17. Microwave Enhanced Cotunneling in SET Transistors

    DEFF Research Database (Denmark)

    Manscher, Martin; Savolainen, M.; Mygind, Jesper

    2003-01-01

    Cotunneling in single electron tunneling (SET) devices is an error process which may severely limit their electronic and metrologic applications. Here is presented an experimental investigation of the theory for adiabatic enhancement of cotunneling by coherent microwaves. Cotunneling in SET...... transistors has been measured as function of temperature, gate voltage, frequency, and applied microwave power. At low temperatures and applied power levels, including also sequential tunneling, the results can be made consistent with theory using the unknown damping in the microwave line as the only free...

  18. Dose Rate Effects in Linear Bipolar Transistors

    Science.gov (United States)

    Johnston, Allan; Swimm, Randall; Harris, R. D.; Thorbourn, Dennis

    2011-01-01

    Dose rate effects are examined in linear bipolar transistors at high and low dose rates. At high dose rates, approximately 50% of the damage anneals at room temperature, even though these devices exhibit enhanced damage at low dose rate. The unexpected recovery of a significant fraction of the damage after tests at high dose rate requires changes in existing test standards. Tests at low temperature with a one-second radiation pulse width show that damage continues to increase for more than 3000 seconds afterward, consistent with predictions of the CTRW model for oxides with a thickness of 700 nm.

  19. Radiation strength of magnetosensitive silicon transistors

    Science.gov (United States)

    Vikulin, I. M.; Glauberman, M. A.; Kanishcheva, N. A.; Kozel, V. V.; Prokhorov, V. A.

    1985-06-01

    The effects of penetrating radiation on the magnetosensitivity of transistors exposed to fast electrons and gamma radiation from a Co-60 source are experimentally studied. The results indicate that double-collector magnetotransistors are quite resistant to radiation, and that their magnetosensitivity can be enhanced by exposing them to appropriate amounts of electron or gamma radiation. It is shown that the sensitivity depends on the properties of the material (in particular, the carrier lifetime) and on the change in the effective length of the base and the redistribution of the emitter-injected carriers between the collectors in the presence of an external magnetic field.

  20. AlGaN Channel Transistors for Power Management and Distribution

    Science.gov (United States)

    VanHove, James M.

    1996-01-01

    Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

  1. Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors

    International Nuclear Information System (INIS)

    Appenzeller, J.; Martel, R.; Solomon, P.; Chan, K.; Avouris, Ph.; Knoch, J.; Benedict, J.; Tanner, M.; Thomas, S.; Wang, K. L.

    2000-01-01

    We present a scheme for the fabrication of ultrashort channel length metal-oxide-semiconductor field-effect transistors (MOSFETs) involving nanolithography and molecular-beam epitaxy. The active channel is undoped and is defined by a combination of nanometer-scale patterning and anisotropic etching of an n ++ layer grown on a silicon on insulator wafer. The method is self-limiting and can produce MOSFET devices with channel lengths of less than 10 nm. Measurements on the first batch of n-MOSFET devices fabricated with this approach show very good output characteristics and good control of short-channel effects. (c) 2000 American Institute of Physics

  2. High performance solution-processable tetrathienoacene (TTAR) based small molecules for organic field effect transistors (OFETs).

    Science.gov (United States)

    Vegiraju, Sureshraju; Huang, Deng-Yi; Priyanka, Pragya; Li, Yo-Shan; Luo, Xian-Lun; Hong, Shao-Huan; Ni, Jen-Shyang; Tung, Shih-Huang; Wang, Chien-Lung; Lien, Wei-Chieh; Yau, Shueh Lin; Liu, Cheng-Liang; Chen, Ming-Chou

    2017-05-30

    Three new organic semiconductors with alkyl chain-substituted tetrathienoacene (TTAR) as the central core and both ends capped with thiophene (DT-TTAR), thienothiophene (DTT-TTAR) and dithienothiophene (DDTT-TTAR) have been synthesized and characterized for organic field effect transistor (OFET) applications. A hole mobility of 0.81 cm 2 V -1 s -1 was achieved for the DDTT-TTAR film, which represents the highest mobility yet found for a solution-processable p-type TTAR-based small molecular semiconductors.

  3. 25th anniversary article: key points for high-mobility organic field-effect transistors.

    Science.gov (United States)

    Dong, Huanli; Fu, Xiaolong; Liu, Jie; Wang, Zongrui; Hu, Wenping

    2013-11-20

    Remarkable progress has been made in developing high performance organic field-effect transistors (OFETs) and the mobility of OFETs has been approaching the values of polycrystalline silicon, meeting the requirements of various electronic applications from electronic papers to integrated circuits. In this review, the key points for development of high mobility OFETs are highlighted from aspects of molecular engineering, process engineering and interface engineering. The importance of other factors, such as impurities and testing conditions is also addressed. Finally, the current challenges in this field for practical applications of OFETs are further discussed. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Integrated Materials Design of Organic Semiconductors for Field-Effect Transistors

    KAUST Repository

    Mei, Jianguo

    2013-05-08

    The past couple of years have witnessed a remarkable burst in the development of organic field-effect transistors (OFETs), with a number of organic semiconductors surpassing the benchmark mobility of 10 cm2/(V s). In this perspective, we highlight some of the major milestones along the way to provide a historical view of OFET development, introduce the integrated molecular design concepts and process engineering approaches that lead to the current success, and identify the challenges ahead to make OFETs applicable in real applications. © 2013 American Chemical Society.

  5. Charge transport behavior of benodithiophene-diketopyrrololpyrrole-based conjugated polymer in organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jin Kuen [Dept. of Chemistry, Hankuk University of Foreign Studies, Yongin (Korea, Republic of)

    2015-07-15

    Organic optoelectronic devices, such as light-emitting diodes, organic solar cells (OSCs), and organic field effect transistors (OFETs), have emerged due to the development of π-conjugated polymers. Because the delocalized π-framework can significantly reduce the energy gap between the highest-occupied molecular orbital (HOMO) and the lowest-unoccupied molecular orbital (LUMO), their intrinsic optoelectronic properties can be tunable with their conjugation length in terms of average molecular weights and their π-backbone structures. The new type of low bandgap conjugated polymer (P1) has been successively polymerized via a palladium- catalyzed Stille cross-coupling reaction with bis-ethylhexyl BDT and bis-n-decane DPP. With a linear alkyl chain in the DPP units, the intermolecular packing structure was thought to be enhanced by proving the UV–Vis and UPS spectra. In addition, the electronic properties of P1 via field-effect transistors well illustrate the typical p-type semiconducting property without showing the significant improvement by thermal annealing. From a broader perspective, this research indicates that a wider choice of linear alkyl chain length in DPP units and modification of the interface between dielectric and active layers should be sought to further optimize device performance. Hence, progressive works with the strategy presented in this report will be pursued to address the different challenges in attaining target OFET performances.

  6. Edge-on gating effect in molecular wires.

    Science.gov (United States)

    Lo, Wai-Yip; Bi, Wuguo; Li, Lianwei; Jung, In Hwan; Yu, Luping

    2015-02-11

    This work demonstrates edge-on chemical gating effect in molecular wires utilizing the pyridinoparacyclophane (PC) moiety as the gate. Different substituents with varied electronic demands are attached to the gate to simulate the effect of varying gating voltages similar to that in field-effect transistor (FET). It was observed that the orbital energy level and charge carrier's tunneling barriers can be tuned by changing the gating group from strong electron acceptors to strong electron donors. The single molecule conductance and current-voltage characteristics of this molecular system are truly similar to those expected for an actual single molecular transistor.

  7. Non-equilibrium Green's function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors

    Science.gov (United States)

    Aldegunde, M.; Martinez, A.; Asenov, A.

    2011-11-01

    In this paper, we study the effect of phonon scattering in silicon nanowire field effect transistors (NWFET) using a Non-equilibrium Green's function formalism in the effective mass approximation. The effect of electron-phonon scattering on the current voltage characteristics at high and low drain bias is investigated in detail. A wide range of cross-sections (from 2.2 × 2.2 to 6.2 × 6.2 nm2) and channel lengths (from 6 to 40 nm) are considered. The impact of phonon scattering on the electron current in different regions of the device characteristics is studied. Simulations including scattering in the whole transistor are compared with corresponding simulations in which scattering is only in the channel. Phonon limited mobility dependence on the NWFET cross-section and channel length is studied. The ballisticity coefficient, as a function of the channel length and gate voltage, is also computed for various channel cross-sections and lengths at high drain bias. The paper demonstrates that tunneling plays an important role in understanding the effect of phonon scattering at short channel lengths.

  8. Stable organic thin-film transistors

    Science.gov (United States)

    Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin; Park, Youngrak; Kippelen, Bernard

    2018-01-01

    Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V−1 s−1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies. PMID:29340301

  9. Modeling Ballistic Response of Ultra-High-Molecular-Weight Polyethylene (UHMWPE)

    Science.gov (United States)

    2016-07-01

    properties were identified that could improve protection design . A set of material parameters was selected based on the parametric study to best match the...Gab by using a rotated laminate architecture . Based on the parametric study, hybrid panels are expected to exhibit lower V50 and lower BFD as...position unless so designated by other authorized documents. Citation of manufacturer’s or trade names does not constitute an official endorsement

  10. Organic field-effect transistor-based gas sensors.

    Science.gov (United States)

    Zhang, Congcong; Chen, Penglei; Hu, Wenping

    2015-04-21

    Organic field-effect transistors (OFETs) are one of the key components of modern organic electronics. While the past several decades have witnessed huge successes in high-performance OFETs, their sophisticated functionalization with regard to the responses towards external stimulations has also aroused increasing attention and become an important field of general concern. This is promoted by the inherent merits of organic semiconductors, including considerable variety in molecular design, low cost, light weight, mechanical flexibility, and solution processability, as well as by the intrinsic advantages of OFETs including multiparameter accessibility and ease of large-scale manufacturing, which provide OFETs with great potential as portable yet reliable sensors offering high sensitivity, selectivity, and expeditious responses. With special emphases on the works achieved since 2009, this tutorial review focuses on OFET-based gas sensors. The working principles of this type of gas sensors are discussed in detail, the state-of-the-art protocols developed for high-performance gas sensing are highlighted, and the advanced gas discrimination systems in terms of sensory arrays of OFETs are also introduced. This tutorial review intends to provide readers with a deep understanding for the future design of high-quality OFET gas sensors for potential uses.

  11. High Resolution, High-Speed Photography, an Increasingly Prominent Diagnostic in Ballistic Research Experiments

    International Nuclear Information System (INIS)

    Shaw, L.; Muelder, S.

    1999-01-01

    High resolution, high-speed photography is becoming a prominent diagnostic in ballistic experimentation. The development of high speed cameras utilizing electro-optics and the use of lasers for illumination now provide the capability to routinely obtain high quality photographic records of ballistic style experiments. The purpose of this presentation is to review in a visual manner the progress of this technology and how it has impacted ballistic experimentation. Within the framework of development at LLNL, we look at the recent history of large format high-speed photography, and present a number of photographic records that represent the state of the art at the time they were made. These records are primarily from experiments involving shaped charges. We also present some examples of current photographic technology, developed within the ballistic community, that has application to hydro diagnostic experimentation at large. This paper is designed primarily as an oral-visual presentation. This written portion is to provide general background, a few examples, and a bibliography

  12. Shape of scoria cones on Mars: Insights from numerical modeling of ballistic pathways

    Czech Academy of Sciences Publication Activity Database

    Brož, Petr; Čadek, O.; Hauber, E.; Rossi, A. P.

    2014-01-01

    Roč. 406, November (2014), s. 14-23 ISSN 0012-821X Institutional support: RVO:67985530 Keywords : Mars * explosive volcanism * scoria cone * ballistic pathway Subject RIV: DC - Siesmology, Volcanology, Earth Structure Impact factor: 4.734, year: 2014

  13. Conventional Prompt Global Strike and Long Range Ballistic Missiles: Background and Issues

    Science.gov (United States)

    2017-02-03

    ballistic missiles or caches of weapons of mass destruction (WMD) might allow the United States to destroy these weapons before an adversary could... coherent force structure. Hence, although the Air Force considered the NPR objective of integrating nuclear and conventional strike forces as a

  14. Multiple-Sensor Discrimination of Closely-Spaced Objects on a Ballistic Trajectory

    Science.gov (United States)

    2015-05-18

    26 Table 7. Resulting pignistic probabilities for engagement ........................................................... 26 Table 8. Baseline radar...set of sensors is responsible for observing a complex of objects, selecting a target to engage , and intercepting that target.6 A multiple-sensor...Modeling Two-body orbit dynamics was utilized to generate ballistic trajectories between the desired burnout and reentry points. The dispersion of object

  15. Dynamic material characterization by combining ballistic testing and an engineering model

    NARCIS (Netherlands)

    Carton, E.P.; Roebroeks, G.H.J.J.; Wal, R. van der

    2013-01-01

    At TNO several energy-based engineering models have been created for various failure mechanism occurring in ballistic testing of materials, like ductile hole growth, denting, plugging, etc. Such models are also under development for ceramic and fiberbased materials (fabrics). As the models are

  16. 77 FR 6548 - Notice of Availability of Ballistic Survivability, Lethality and Vulnerability Analyses

    Science.gov (United States)

    2012-02-08

    ... Department of the Army Notice of Availability of Ballistic Survivability, Lethality and Vulnerability... survivability, lethality and vulnerability (SLV) analyses. ARL/SLAD conducts SLV analyses, using the MUVES-S2 vulnerability model, to quantify system, subsystem and/or component level vulnerabilities of ground and air...

  17. Dynamics of ballistically injected latex particles in living human endothelial cells

    NARCIS (Netherlands)

    Li, Y.; Vanapalli Veera, V.S.A.R.; Vanapalli, Srinivas; Duits, Michael H.G.

    2009-01-01

    We studied the dynamics of ballistically injected latex particles (BIP) inside endothelial cells, using video particle tracking to measure the mean squared displacement (MSD) as a function of lag time. The MSD shows a plateau at short times and a linear behavior at longer times, indicating that the

  18. The Advantages of Normalizing Electromyography to Ballistic Rather than Isometric or Isokinetic Tasks.

    Science.gov (United States)

    Suydam, Stephen M; Manal, Kurt; Buchanan, Thomas S

    2017-07-01

    Isometric tasks have been a standard for electromyography (EMG) normalization stemming from anatomic and physiologic stability observed during contraction. Ballistic dynamic tasks have the benefit of eliciting maximum EMG signals for normalization, despite having the potential for greater signal variability. It is the purpose of this study to compare maximum voluntary isometric contraction (MVIC) to nonisometric tasks with increasing degrees of extrinsic variability, ie, joint range of motion, velocity, rate of contraction, etc., to determine if the ballistic tasks, which elicit larger peak EMG signals, are more reliable than the constrained MVIC. Fifteen subjects performed MVIC, isokinetic, maximum countermovement jump, and sprint tasks while EMG was collected from 9 muscles in the quadriceps, hamstrings, and lower leg. The results revealed the unconstrained ballistic tasks were more reliable compared to the constrained MVIC and isokinetic tasks for all triceps surae muscles. The EMG from sprinting was more reliable than the constrained cases for both the hamstrings and vasti. The most reliable EMG signals occurred when the body was permitted its natural, unconstrained motion. These results suggest that EMG is best normalized using ballistic tasks to provide the greatest within-subject reliability, which beneficially yield maximum EMG values.

  19. Hit-to-Kill Guidance Algorithm for the Interception of Ballistic Missiles During the Boost Phase

    Science.gov (United States)

    2006-06-01

    MODELING PROGRAMS...............................................................81 A. 3DOF TARGET...BRFlight3.m .......................................................................................82 B. 3DOF INTERCEPTOR...Degree-of-Freedom ( 3DOF ) model of each. This paper will focus on the Taep’o-dong Two (TD2) ballistic rocket in development by the People’s

  20. Model for ballistic spin-transport in ferromagnet/two-dimensional electron gas/ferromagnet structures

    NARCIS (Netherlands)

    Schapers, T; Nitta, J; Heersche, HB; Takayanagi, H

    The spin dependent conductance of a ferromagnet/two-dimensional electron gas ferromagnet structure is theoretically examined in the ballistic transport regime. It is shown that the spin signal can be improved considerably by making use of the spin filtering effect of a barrier at the ferromagnet

  1. Critical currents in ballistic two-dimensional InAs-based superconducting weak links

    NARCIS (Netherlands)

    Heida, J.P.; Wees, B.J. van; Klapwijk, T.M.; Borghs, G.

    1999-01-01

    The critical supercurrent Ic carried by a short (0.3 to 0.8 µm) ballistic two-dimensional InAs-based electron gas between superconducting niobium electrodes is studied. In relating the maximum value to the resistance of the weak link in the normal state Rn a much lower value is found than

  2. EFFECTS OF STRENGTH VS. BALLISTIC-POWER TRAINING ON THROWING PERFORMANCE

    Directory of Open Access Journals (Sweden)

    Nikolaos Zaras

    2013-03-01

    Full Text Available The purpose of the present study was to investigate the effects of 6 weeks strength vs. ballistic-power (Power training on shot put throwing performance in novice throwers. Seventeen novice male shot-put throwers were divided into Strength (N = 9 and Power (n = 8 groups. The following measurements were performed before and after the training period: shot put throws, jumping performance (CMJ, Wingate anaerobic performance, 1RM strength, ballistic throws and evaluation of architectural and morphological characteristics of vastus lateralis. Throwing performance increased significantly but similarly after Strength and Power training (7.0-13.5% vs. 6.0-11.5%, respectively. Muscular strength in leg press increased more after Strength than after Power training (43% vs. 21%, respectively, while Power training induced an 8.5% increase in CMJ performance and 9.0 - 25.8% in ballistic throws. Peak power during the Wingate test increased similarly after Strength and Power training. Muscle thickness increased only after Strength training (10%, p < 0.05. Muscle fibre Cross Sectional Area (fCSA increased in all fibre types after Strength training by 19-26% (p < 0.05, while only type IIx fibres hypertrophied significantly after Power training. Type IIx fibres (% decreased after Strength but not after Power training. These results suggest that shot put throwing performance can be increased similarly after six weeks of either strength or ballistic power training in novice throwers, but with dissimilar muscular adaptations

  3. Quantum and classical ballistic transport in a chaotic 2D electron channel

    International Nuclear Information System (INIS)

    Luna A, G.A.; Rodriguez, M.A.; Krokhin, A.; Na, K.; Mendez, A.

    1998-01-01

    We review recent results concerning the quantum and classical dynamical properties of ballistic electrons in a ripple channel, their transport properties and its classical-quantum correspondence is analyzed in terms of q uantum Poincare plots , energy level statistics, and certain features of the energy-band spectra. (Author)

  4. Assessment of Three Finite Element Approaches for Modeling the Ballistic Impact Failure of Metal Plates

    Science.gov (United States)

    Mansur, Ali; Nganbe, Michel

    2015-03-01

    The ballistic impact was numerically modeled for AISI 450 steel struck by a 17.3 g ogive nose WC-Co projectile using Abaqus/Explicit. The model was validated using experimental results and data for different projectiles and metal targets. The Abaqus ductile-shear, local principal strain to fracture, and absorbed strain energy at failure criteria were investigated. Due to the highly dynamic nature of ballistic impacts, the absorbed strain energy approach posed serious challenges in estimating the effective deformation volume and yielded the largest critical plate thicknesses for through-thickness penetration (failure). In contrast, the principal strain criterion yielded the lowest critical thicknesses and provided the best agreement with experimental ballistic test data with errors between 0 and 30%. This better accuracy was due to early failure definition when the very first mesh at the target back side reached the strain to fracture, which compensated for the overall model overestimation. The ductile-shear criterion yielded intermediate results between those of the two comparative approaches. In contrast to the ductile-shear criterion, the principal strain criterion requires only basic data readily available for practically all materials. Therefore, it is a viable alternative for an initial assessment of the ballistic performance and pre-screening of a large number of new candidate materials as well as for supporting the development of novel armor systems.

  5. Validation of the NATO Armaments Ballistic Kernel for use in small-arms fire control systems

    Directory of Open Access Journals (Sweden)

    D. Corriveau

    2017-06-01

    Full Text Available In support for the development of a new small-arm ballistic computer based on the NATO Armaments Ballistic Kernel (NABK for the Canadian snipers, DRDC Valcartier Research Centre was asked to carry out high-fidelity 6 degree-of-freedom (6-DOF trajectory simulations for a set of relevant vignettes for the snipers, and to compare the direct fire 6-DOF simulation results with those obtained with the 4-DOF NATO Armaments Ballistic Kernel (NABK adapted to simulate small-arm ammunition trajectories. To conduct this study, DRDC Valcartier Research Centre used BALCO v1.0b. This paper presents (1 the process and the methodology employed to carry out the sniper direct fire solution study, (2 the modeling and the simulation of the sniper projectile, the approach used in calculating the firing solutions, and the results of direct fire simulations for the sniper vignettes, and (3 an analysis of firing solutions obtained with the BALCO engine versus those of NABK. The work presented in this paper serves to validate the use of NABK for the new sniper ballistic computer.

  6. Inelastic deformation and failure of tungsten carbide under ballistic-loading conditions

    NARCIS (Netherlands)

    Hazell, P.J.; Appleby-Thomas, G.J.; Herlaar, K.; Painter, J.

    2010-01-01

    High-speed photography has been used to investigate the dynamic behaviour of similar grades of WC-Co hardmetals during ballistic impacts with velocities in the range of 28-484. m/s. Key features of the failure of similar grades of WC-Co materials during complimentary impacts have been observed and

  7. Determine ISS Soyuz Orbital Module Ballistic Limits for Steel Projectiles Hypervelocity Impact Testing

    Science.gov (United States)

    Lyons, Frankel

    2013-01-01

    A new orbital debris environment model (ORDEM 3.0) defines the density distribution of the debris environment in terms of the fraction of debris that are low-density (plastic), medium-density (aluminum) or high-density (steel) particles. This hypervelocity impact (HVI) program focused on assessing ballistic limits (BLs) for steel projectiles impacting the enhanced Soyuz Orbital Module (OM) micrometeoroid and orbital debris (MMOD) shield configuration. The ballistic limit was defined as the projectile size on the threshold of failure of the OM pressure shell as a function of impact speeds and angle. The enhanced OM shield configuration was first introduced with Soyuz 30S (launched in May 2012) to improve the MMOD protection of Soyuz vehicles docked to the International Space Station (ISS). This test program provides HVI data on U.S. materials similar in composition and density to the Russian materials for the enhanced Soyuz OM shield configuration of the vehicle. Data from this test program was used to update ballistic limit equations used in Soyuz OM penetration risk assessments. The objective of this hypervelocity impact test program was to determine the ballistic limit particle size for 440C stainless steel spherical projectiles on the Soyuz OM shielding at several impact conditions (velocity and angle combinations). This test report was prepared by NASA-JSC/ HVIT, upon completion of tests.

  8. Gridded thermionic gun and integral superconducting ballistic bunch compression cavity

    Energy Technology Data Exchange (ETDEWEB)

    Schultheiss, Thomas [Advanced Energy Systems, Inc., Medford, NY (United States)

    2015-11-16

    general design is a modified ballistic compression cavity pair with two independently powered cells [3]. The first is a cathode cell that includes the thermionic cathode and grid to provide for beam bunching. The second is a full cell with independent phasing and field levels designed to minimize energy spread. The primary goal for Phase II is to manufacture a superconducting gun with a thermionic cathode and imbedded coil. The system developed here is applicable to many high current electron accelerators. The analysis and design constraints imposed by the magnetized cathode make the cathode system developed here more complicated and limited than one without the magnetized beam constraints. High power ERLs would benefit by a gun with the capabilities shown here, 400 mA or more of current. ERLs hold great promise for electron cooling experiments, advanced light sources and Free Electron Lasers. This high current electron injector is a technological advance that will place the requirements for an ERL capable of providing quality bunches needed for cooling within the MEIC circulator ring within reach. This injector would have application to future ERLs around the world.

  9. Storage and recovery of elastic potential energy powers ballistic prey capture in toads.

    Science.gov (United States)

    Lappin, A Kristopher; Monroy, Jenna A; Pilarski, Jason Q; Zepnewski, Eric D; Pierotti, David J; Nishikawa, Kiisa C

    2006-07-01

    Ballistic tongue projection in toads is a remarkably fast and powerful movement. The goals of this study were to: (1) quantify in vivo power output and activity of the depressor mandibulae muscles that are responsible for ballistic mouth opening, which powers tongue projection; (2) quantify the elastic properties of the depressor mandibulae muscles and their series connective tissues using in situ muscle stimulation and force-lever studies; and (3) develop and test an elastic recoil model, based on the observed elastic properties of the depressor mandibulae muscles and series connective tissues, that accounts for displacement, velocity, acceleration and power output during ballistic mouth opening in toads. The results demonstrate that the depressor mandibulae muscles of toads are active for up to 250 ms prior to mouth opening. During this time, strains of up to 21.4% muscle resting length (ML) develop in the muscles and series connective tissues. At maximum isometric force, series connective tissues develop strains up to 14% ML, and the muscle itself develops strains up to 17.5% ML. When the mouth opens rapidly, the peak instantaneous power output of the depressor mandibulae muscles and series connective tissues can reach 9600 W kg(-1). The results suggest that: (1) elastic recoil of muscle itself can contribute significantly to the power of ballistic movements; (2) strain in series elastic elements of the depressor mandibulae muscle is too large to be borne entirely by the cross bridges and the actin-myosin filament lattice; and (3) central nervous control of ballistic tongue projection in toads likely requires the specification of relatively few parameters.

  10. KevlarTM Fiber-Reinforced Polybenzoxazine Alloys for Ballistic Impact Application

    Directory of Open Access Journals (Sweden)

    Chanchira Jubsilp

    2011-10-01

    Full Text Available A light weight ballistic composites from KevlarTM-reinforcing fiber having polybenzoxazine (BA/urethane prepolymer (PU alloys as a matrix were investigated in this work. The effect of alloy compositions on the ballistic composite properties was determined. The results revealed that the enhancement in the glass transition temperature (Tg of the KevlarTM-reinforced BA/PU composites compared to that of the KevlarTM-reinforced polybenzoxazine composite was observed. The increase of the elastomeric PU content in the BA/PU alloy resulted in samples with tougher characteristics. The storage modulus of the KevlarTM-reinforced BA/PU composites increased with increasing the mass fraction of polybenzoxazine. A ballistic impact test was also performed on the KevlarTM-reinforced BA/PU composites using a 9 mm handgun. It was found that the optimal contents of PU in the BA/PU alloys should be approximately 20wt%. The extent of the delaminated area and interfacial fracture were observed to change with the varied compositions of the matrix alloys. The appropriate thickness of KevlarTM-reinforced 80/20 BA/PU composite panel was 30 plies and 50 plies to resist the penetration from the ballistic impact equivalent to levels II-A and III-A of NIJ standard. The arrangement of composite panels with the higher stiffness panel at the front side also showed the best efficiency of ballistic penetration resistance.

  11. Combining distances of ballistic and myrmecochorous seed dispersal in Adriana quadripartita (Euphorbiaceae)

    Science.gov (United States)

    Beaumont, Kieren P.; Mackay, Duncan A.; Whalen, Molly A.

    2009-05-01

    The separate contributions of different vectors to net seed dispersal curves of diplochorous systems have rarely been characterised. In Australia, myrmecochory is a common seed dispersal syndrome and in the majority of such systems, seeds are initially dispersed ballistically. We measured ballistic and myrmecochorous seed dispersal distances in relation to canopies of Adriana quadripartita (Euphorbiaceae) and used a simulation model to estimate the net dispersal curve. We also compared seed removal rates and ant abundances under, and outside, plant canopies to examine how foraging patterns by ants may affect net dispersal. Overall ant abundance did not show a significant numerical response to seedfall; however, the abundance of the main seed dispersing ant, Rhytidoponera 'metallica' did. Despite this, seed removal rates did not differ significantly between canopy and open locations. Rhytidoponera 'metallica' account for 93% of observed seed dispersal events. On average, the ants dispersed seeds 1.54 m and in doing so, moved seed a mean radial distance of 0.76 m away from canopy edges. This contribution to net dispersal distance by ants is considerable since ballistic dispersal moved seeds a median distance of 7.5 cm. Our simulation model indicated that the combination of ballistic and ant seed dispersal is expected to result in seeds being transported a median net radial dispersal distance of 1.05 m from the canopy edge. Thus in this system, an important function of diplochory may simply be to move a higher proportion of seeds from under the canopy of parent plants than is possible by ballistic dispersal alone. This 'dispersal-for-distance' may result in reduced parent-offspring competition or may increase the probability that seeds reach rare safe sites for germination and recruitment.

  12. Deterrence of ballistic missile systems and their effects on today's air operations

    Science.gov (United States)

    Durak, Hasan

    2015-05-01

    Lately, the effect-based approach has gained importance in executing air operations. Thus, it makes more successful in obtaining the desired results by breaking the enemy's determination in a short time. Air force is the first option to be chosen in order to defuse the strategic targets. However, the problems such as the defense of targets and country, radars, range…etc. becoming serious problems. At this level ballistic missiles emerge as a strategic weapon. Ultimate emerging technologies guided by the INS and GPS can also be embedded with multiple warheads and reinforced with conventional explosive, ballistic missiles are weapons that can destroy targets with precision. They have the advantage of high speed, being easily launched from every platform and not being easily detected by air defense systems contrary to other air platforms. While these are the advantages, there are also disadvantages of the ballistic missiles. The high cost, unavailability of nuclear, biological and chemical weapons, and its limited effect while using conventional explosives against destroying the fortified targets are the disadvantages. The features mentioned above should be considered as limitation to the impact of the ballistic missiles. The aim is to impose the requests on enemies without starting a war with all components and to ensure better implementation of the operation functions during the air operations. In this study, effects of ballistic missiles in the future on air battle theatre will be discussed in the beginning, during the process and at the end phase of air operations within the scope of an effect-based approach.

  13. Organic semiconductors for organic field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yoshiro Yamashita

    2009-01-01

    Full Text Available The advantages of organic field-effect transistors (OFETs, such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organic semiconductors have been synthesized showing comparable mobilities to amorphous-silicon-based FETs. These materials make OFETs more attractive and their applications have been attempted. New organic semiconductors resulting in high-performance FET devices are described here and the relationship between transistor characteristics and chemical structure is discussed.

  14. GaN transistors for efficient power conversion

    CERN Document Server

    Lidow, Alex; de Rooij, Michael; Reusch, David

    2014-01-01

    The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application-focused i

  15. Toward complementary ionic circuits: the npn ion bipolar junction transistor.

    Science.gov (United States)

    Tybrandt, Klas; Gabrielsson, Erik O; Berggren, Magnus

    2011-07-06

    Many biomolecules are charged and may therefore be transported with ionic currents. As a step toward addressable ionic delivery circuits, we report on the development of a npn ion bipolar junction transistor (npn-IBJT) as an active control element of anionic currents in general, and specifically, demonstrate actively modulated delivery of the neurotransmitter glutamic acid. The functional materials of this transistor are ion exchange layers and conjugated polymers. The npn-IBJT shows stable transistor characteristics over extensive time of operation and ion current switch times below 10 s. Our results promise complementary chemical circuits similar to the electronic equivalence, which has proven invaluable in conventional electronic applications.

  16. A gallium phosphide high-temperature bipolar junction transistor

    Science.gov (United States)

    Zipperian, T. E.; Dawson, L. R.; Chaffin, R. J.

    1981-01-01

    Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

  17. Modeling of Transistor's Tracking Behavior in Compact Models

    Directory of Open Access Journals (Sweden)

    Ning Lu

    2011-01-01

    Full Text Available We present a novel method to model the tracking behavior of semiconductor transistors undergoing across-chip variations in a compact Monte Carlo model for SPICE simulations and show an enablement of simultaneous (−1/2 tracking relations among transistors on a chip at any poly density, any gate pitch, and any physical location for the first time. At smaller separations, our modeled tracking relation versus physical location reduces to Pelgrom's characterization on device's distance-dependent mismatch. Our method is very compact, since we do not use a matrix or a set of eigen solutions to represent correlations among transistors.

  18. Ballistic transport in planetary ring systems due to particle erosion mechanisms. I - Theory, numerical methods, and illustrative examples

    Science.gov (United States)

    Durisen, Richard H.; Murphy, Brian W.; Cramer, Nichael Lynn; Cuzzi, Jeffrey N.; Mullikin, Thomas L.

    1989-01-01

    Ballistic transport, defined as the net radial transport of mass and angular momentum due to exchanges of meteoroid hypersonic-impact ejecta by neighboring planetary ring regions on time-scales orders-of-magnitude shorter than the age of the solar system, is presently considered as a problem in mathematical physics. The preliminary results of a numerical scheme for following the combined effects of ballistic transport and viscous diffusion demonstrate that ballistic transport generates structure near sharp edges already present in the ring-mass distribution; the entire ring system ultimately develops an undulatory structure whose length scale is typically of the order of the radial excursion of the impact ejecta.

  19. Pressure Sensitive Insulated Gate Field Effect Transistor

    Science.gov (United States)

    Suminto, James Tjan-Meng

    A pressure sensitive insulated gate field effect transistor has been developed. The device is an elevated gate field-effect-transistor. It consists of a p-type silicon substrate in which two n^+ region, the source and drain, are formed. The gate electrode is a metal film sandwiched in an insulated micro-diaphragm resembling a pill-box which covers the gate oxide, drain, and source. The space between the gate electrode and the oxide is vacuum or an air-gap. When pressure is applied on the diaphragm it deflects and causes a change in the gate capacitance, and thus modulates the conductance of the channel between source and drain. A general theory dealing with the characteristic of this pressure sensitive insulated gate field effect transistor has been derived, and the device fabricated. The fabrication process utilizes the standard integrated circuit fabrication method. It features a batch fabrication of field effect devices followed by the batch fabrication of the deposited diaphragm on top of each field effect device. The keys steps of the diaphragm fabrication are the formation of spacer layer, formation of the diaphragm layer, and the subsequent removal of the spacer layer. The chip size of the device is 600 μm x 1050 mum. The diaphragm size is 200 μm x 200 mum. Characterization of the device has been performed. The current-voltage characteristics with pressure as parameters have been demonstrated and the current-pressure transfer curves obtained. They show non-linear characteristics as those of conventional capacitive pressure sensors. The linearity of threshold voltage versus pressure transfer curves has been demonstrated. The temperature effect on the device performances has been tested. The temperature coefficient of threshold voltage, rather than the electron mobility, has dominated the temperature coefficient of the device. Two temperature compensation schemes have been tested: one method is by connecting two identical PSIGFET in a differential amplifier

  20. Direct coupled amplifiers using field effect transistors

    International Nuclear Information System (INIS)

    Fowler, E.P.

    1964-03-01

    The concept of the uni-polar field effect transistor (P.E.T.) was known before the invention of the bi-polar transistor but it is only recently that they have been made commercially. Being produced as yet only in small quantities, their price imposes a restriction on use to circuits where their peculiar properties can be exploited to the full. One such application is described here where the combination of low voltage drift and relatively low input leakage current are necessarily used together. One of the instruments used to control nuclear reactors has a logarithmic response to the mean output current from a polarised ionisation chamber. The logarithmic signal is then differentiated electrically, the result being displayed on a meter calibrated to show the reactor divergence or doubling time. If displayed in doubling time the scale is calibrated reciprocally. Because of the wide range obtained in the logarithmic section and the limited supply voltage, an output of 1 volt per decade change in ionisation current is used. Differentiating this gives a current of 1.5 x 10 -8 A for p.s.D. (20 sec. doubling time) in the differentiating amplifier. To overcome some of the problems of noise due to statistical variations in input current, the circuit design necessitates a resistive path to ground at the amplifier input of 20 M.ohms. A schematic diagram is shown. 1. It is evident that a zero drift of 1% can be caused by a leakage current of 1.5 x 10 -10 A or an offset voltage of 3 mV at the amplifier input. Although the presently used electrometer valve is satisfactory from the point of view of grid current, there have been sudden changes in grid to grid voltage (the valve is a double triode) of up to 10 m.V. It has been found that a pair of F.E.T's. can be used to replace the electrometer valve so long as care is taken in correct balance of the two devices. An investigation has been made into the characteristics of some fourteen devices to see whether those with very

  1. Electrostatic melting in a single-molecule field-effect transistor with applications in genomic identification

    Science.gov (United States)

    Vernick, Sefi; Trocchia, Scott M.; Warren, Steven B.; Young, Erik F.; Bouilly, Delphine; Gonzalez, Ruben L.; Nuckolls, Colin; Shepard, Kenneth L.

    2017-05-01

    The study of biomolecular interactions at the single-molecule level holds great potential for both basic science and biotechnology applications. Single-molecule studies often rely on fluorescence-based reporting, with signal levels limited by photon emission from single optical reporters. The point-functionalized carbon nanotube transistor, known as the single-molecule field-effect transistor, is a bioelectronics alternative based on intrinsic molecular charge that offers significantly higher signal levels for detection. Such devices are effective for characterizing DNA hybridization kinetics and thermodynamics and enabling emerging applications in genomic identification. In this work, we show that hybridization kinetics can be directly controlled by electrostatic bias applied between the device and the surrounding electrolyte. We perform the first single-molecule experiments demonstrating the use of electrostatics to control molecular binding. Using bias as a proxy for temperature, we demonstrate the feasibility of detecting various concentrations of 20-nt target sequences from the Ebolavirus nucleoprotein gene in a constant-temperature environment.

  2. Individual SWCNT based ionic field effect transistor

    Science.gov (United States)

    Pang, Pei; He, Jin; Park, Jae Hyun; Krstic, Predrag; Lindsay, Stuart

    2011-03-01

    Here we report that the ionic current through a single-walled carbon nanotube (SWCNT) can be effectively gated by a perpendicular electrical field from a top gate electrode, working as ionic field effect transistor. Both our experiment and simulation confirms that the electroosmotic current (EOF) is the main component in the ionic current through the SWCNT and is responsible for the gating effect. We also studied the gating efficiency as a function of solution concentration and pH and demonstrated that the device can work effectively in the physiological relevant condition. This work opens the door to use CNT based nanofluidics for ion and molecule manipulation. This work was supported by the DNA Sequencing Technology Program of the National Human Genome Research Institute (1RC2HG005625-01, 1R21HG004770-01), Arizona Technology Enterprises and the Biodesign Institute.

  3. Printed Thin Film Transistors: Research from China.

    Science.gov (United States)

    Tong, Sichao; Sun, Jia; Yang, Junliang

    2018-03-01

    Thin film transistors (TFTs) have experienced tremendous development during the past decades and show great potential applications in flat displays, sensors, radio frequency identification tags, logic circuit, and so on. The printed TFTs are the key components for rapid development and commercialization of printed electronics. The researchers in China play important roles to accelerate the development and commercialization of printed TFTs. In this review, we comprehensively summarize the research progress of printed TFTs on rigid and flexible substrates from China. The review will focus on printing techniques of TFTs, printed TFTs components including semiconductors, dielectrics and electrodes, as well as fully-printed TFTs and printed flexible TFTs. Furthermore, perspectives on the remaining challenges and future developments are proposed as well.

  4. Antiferromagnetic Spin Wave Field-Effect Transistor

    Science.gov (United States)

    Cheng, Ran; Daniels, Matthew W.; Zhu, Jian-Gang; Xiao, Di

    2016-01-01

    In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzyaloshinskii-Moriya interaction and magnetic anisotropy. We propose a prototype spin wave field-effect transistor which realizes a gate-tunable magnonic analog of the Faraday effect, and demonstrate its application in THz signal modulation. Our findings open up the exciting possibility of digital data processing utilizing antiferromagnetic spin waves and enable the direct projection of optical computing concepts onto the mesoscopic scale. PMID:27048928

  5. Modeling quantization effects in field effect transistors

    CERN Document Server

    Troger, C

    2001-01-01

    Numerical simulation in the field of semiconductor device development advanced to a valuable, cost-effective and flexible facility. The most widely used simulators are based on classical models, as they need to satisfy time and memory constraints. To improve the performance of field effect transistors such as MOSFETs and HEMTs these devices are continuously scaled down in their dimensions. Consequently the characteristics of such devices are getting more and more determined by quantum mechanical effects arising from strong transversal fields in the channel. In this work an approach based on a two-dimensional electron gas is used to describe the confinement of the carriers. Quantization is considered in one direction only. For the derivation of a one-dimensional Schroedinger equation in the effective mass framework a non-parabolic correction for the energy dispersion due to Kane is included. For each subband a non-parabolic dispersion relation characterized by subband masses and subband non-parabolicity coeffi...

  6. Transistorized pulse amplifiers (A.I.T.)

    International Nuclear Information System (INIS)

    Feyt, J.; Couly, J.P.

    1962-01-01

    The two amplifiers whose design and operation are described in this report have been studied for neutron detection units used in piles. They are designed to allow an important reduction of the volume and of the weight of the detector and its amplifier, and to simplify the operation of the detection assembly. To these characteristics can be added the mechanical and electrical robustness and the very reduced micro-phony. The first transistorized amplifier (AIT.1) is simple, very robust, and can be used for radioprotection installations. The second (AIT.4) has a better performance and makes it possible to replace the APT.2 in most of its applications (it has even been used satisfactorily in an apparatus where the micro-phony and the sensitivity to interference of the APT.2 made this latter unusable). (author) [fr

  7. An investigation into the relationship between thermal shock resistance and ballistic performance of ceramic materials

    Science.gov (United States)

    Beaumont, Robert

    Currently, there are no reliable methods for screening potential armour materials and hence full-scale ballistic trials are needed. These are both costly and time-consuming in terms of the actual test and also in the materials development that needs to take place to produce sufficient material to give a meaningful result. Whilst it will not be possible to dispense with ballistic trials before material deployment in armour applications, the ability to shorten the development cycle would be advantageous. The thermal shock performance of ceramic armour materials has been highlighted as potential marker for ballistic performance. Hence the purpose of this study was to investigate this further. A new thermal shock technique that reproduced features relevant to ballistic testing was sought. As it would be beneficial to have a simple test that did not use much material, a water-drop method was adopted. This was combined with a variety of characterisation techniques, administered pre- and post-shock. The methods included measurement of the amplitude of ultrasonic wave transmission through the sample alongside residual strength testing using a biaxial ball-on-ball configuration and reflected light and confocal microscopy. Once the protocols had been refined the testing regime was applied to a group of ceramic materials. The materials selected were from two broad groups: alumina and carbide materials. Carbide ceramics show superior performance to alumina ceramics in ballistic applications so it was essential that any screening test would be easily able to differentiate the two groups. Within the alumina family, two commercially available materials, AD995 and Sintox FA, were selected. These were tested alongside three developmental silicon carbide-boron carbide composites, which had identical chemical compositions but different microstructures and thus presented more of a challenge in terms of differentiation. The results from the various tests were used to make predictions

  8. Schottky Barriers in Bilayer Phosphorene Transistors.

    Science.gov (United States)

    Pan, Yuanyuan; Dan, Yang; Wang, Yangyang; Ye, Meng; Zhang, Han; Quhe, Ruge; Zhang, Xiuying; Li, Jingzhen; Guo, Wanlin; Yang, Li; Lu, Jing

    2017-04-12

    It is unreliable to evaluate the Schottky barrier height (SBH) in monolayer (ML) 2D material field effect transistors (FETs) with strongly interacted electrode from the work function approximation (WFA) because of existence of the Fermi-level pinning. Here, we report the first systematical study of bilayer (BL) phosphorene FETs in contact with a series of metals with a wide work function range (Al, Ag, Cu, Au, Cr, Ti, Ni, and Pd) by using both ab initio electronic band calculations and quantum transport simulation (QTS). Different from only one type of Schottky barrier (SB) identified in the ML phosphorene FETs, two types of SBs are identified in BL phosphorene FETs: the vertical SB between the metallized and the intact phosphorene layer, whose height is determined from the energy band analysis (EBA); the lateral SB between the metallized and the channel BL phosphorene, whose height is determined from the QTS. The vertical SBHs show a better consistency with the lateral SBHs of the ML phosphorene FETs from the QTS compared than that of the popular WFA. Therefore, we develop a better and more general method than the WFA to estimate the lateral SBHs of ML semiconductor transistors with strongly interacted electrodes based on the EBA for its BL counterpart. In terms of the QTS, n-type lateral Schottky contacts are formed between BL phosphorene and Cr, Al, and Cu electrodes with electron SBH of 0.27, 0.31, and 0.32 eV, respectively, while p-type lateral Schottky contacts are formed between BL phosphorene and Pd, Ti, Ni, Ag, and Au electrodes with hole SBH of 0.11, 0.18, 0.19, 0.20, and 0.21 eV, respectively. The theoretical polarity and SBHs are in good agreement with available experiments. Our study provides an insight into the BL phosphorene-metal interfaces that are crucial for designing the BL phosphorene device.

  9. Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics

    Data.gov (United States)

    National Aeronautics and Space Administration — Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to...

  10. Microwave field-efffect transistors theory, design, and application

    CERN Document Server

    Pengelly, Raymond

    1994-01-01

    This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations.

  11. Reaching saturation in patterned source vertical organic field effect transistors

    Science.gov (United States)

    Greenman, Michael; Sheleg, Gil; Keum, Chang-min; Zucker, Jonathan; Lussem, Bjorn; Tessler, Nir

    2017-05-01

    Like most of the vertical transistors, the Patterned Source Vertical Organic Field Effect Transistor (PS-VOFET) does not exhibit saturation in the output characteristics. The importance of achieving a good saturation is demonstrated in a vertical organic light emitting transistor; however, this is critical for any application requiring the transistor to act as a current source. Thereafter, a 2D simulation tool was used to explain the physical mechanisms that prevent saturation as well as to suggest ways to overcome them. We found that by isolating the source facet from the drain-source electric field, the PS-VOFET architecture exhibits saturation. The process used for fabricating such saturation-enhancing structure is then described. The new device demonstrated close to an ideal saturation with only 1% change in the drain-source current over a 10 V change in the drain-source voltage.

  12. Review of Heterojunctin Bipolar Transistor Structure, Applications, and Reliability

    Science.gov (United States)

    Lee, C.; Kayali, S.

    1993-01-01

    Heterojunction Bipolar Transistors (HBTs) are increasingly employed in high frequency, high linerity, and high efficiency applications. As the utilization of these devices becomes more widespread, their operation will be viewed with more scrutiny.

  13. Lateral PNP bipolar transistor with aiding field diffusions

    Science.gov (United States)

    Gallagher, R. C.; Mc Cann, D. H.

    1969-01-01

    Fabrication technique produces field aided lateral PNP transistors compatible with micropower switching circuits. The sub-collector diffusion is performed with phosphorus as the dopant and the epitaxy is grown using the higher temperature silicon tetrachloride process.

  14. Transferred substrate heterojunction bipolar transistors for submillimeter wave applications

    Science.gov (United States)

    Fung, A.; Samoska, L.; Siegel, P.; Rodwell, M.; Urteaga, M.; Paidi, V.

    2003-01-01

    We present ongoing work towards the development of submillimeter wave transistors with goals of realizing advanced high frequency amplifiers, voltage controlled oscillators, active multipliers, and traditional high-speed digital circuits.

  15. Great Experiments in Physics-Discovery of Transistor Effect that ...

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 3; Issue 9. Great Experiments in Physics - Discovery of Transistor Effect that Changed the Communication World. Amit Roy. Series Article Volume 3 Issue 9 September 1998 pp 6-13 ...

  16. Correlation between crystal structure and mobility in organic field-effect transistors based on single crystals of tetrathiafulvalene derivatives.

    Science.gov (United States)

    Mas-Torrent, Marta; Hadley, Peter; Bromley, Stefan T; Ribas, Xavi; Tarrés, Judit; Mas, Montserrat; Molins, Elies; Veciana, Jaume; Rovira, Concepció

    2004-07-14

    Recently, it was reported that crystals of the organic material dithiophene-tetrathiafulvalene (DT-TTF) have a high field-effect charge carrier mobility of 1.4 cm(2)/(V x s). These crystals were formed by a simple drop-casting method, making this material interesting to investigate for possible applications in low-cost electronics. Here, organic single-crystal field-effect transistors based on materials related to DT-TTF are presented and a clear correlation between the crystal structure and the electrical characteristics is observed. The observed relationship between the mobilities in the different crystal structures is strongly corroborated by calculations of both the molecular reorganization energies and the maximum intermolecular transfer integrals. The most suitable materials described here exhibit mobilities that are among the highest reported for organic field-effect transistors and that are the highest reported for solution-processed materials.

  17. A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory.

    Science.gov (United States)

    She, Xiao-Jian; Gustafsson, David; Sirringhaus, Henning

    2017-02-01

    A new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Heterojunction bipolar transistor technology for data acquisition and communication

    Science.gov (United States)

    Wang, C.; Chang, M.; Beccue, S.; Nubling, R.; Zampardi, P.; Sheng, N.; Pierson, R.

    1992-01-01

    Heterojunction Bipolar Transistor (HBT) technology has emerged as one of the most promising technologies for ultrahigh-speed integrated circuits. HBT circuits for digital and analog applications, data conversion, and power amplification have been realized, with speed performance well above 20 GHz. At Rockwell, a baseline AlGaAs/GaAs HBT technology has been established in a manufacturing facility. This paper describes the HBT technology, transistor characteristics, and HBT circuits for data acquisition and communication.

  19. Modeling of charge transport in ion bipolar junction transistors.

    Science.gov (United States)

    Volkov, Anton V; Tybrandt, Klas; Berggren, Magnus; Zozoulenko, Igor V

    2014-06-17

    Spatiotemporal control of the complex chemical microenvironment is of great importance to many fields within life science. One way to facilitate such control is to construct delivery circuits, comprising arrays of dispensing outlets, for ions and charged biomolecules based on ionic transistors. This allows for addressability of ionic signals, which opens up for spatiotemporally controlled delivery in a highly complex manner. One class of ionic transistors, the ion bipolar junction transistors (IBJTs), is especially attractive for these applications because these transistors are functional at physiological conditions and have been employed to modulate the delivery of neurotransmitters to regulate signaling in neuronal cells. Further, the first integrated complementary ionic circuits were recently developed on the basis of these ionic transistors. However, a detailed understanding of the device physics of these transistors is still lacking and hampers further development of components and circuits. Here, we report on the modeling of IBJTs using Poisson's and Nernst-Planck equations and the finite element method. A two-dimensional model of the device is employed that successfully reproduces the main characteristics of the measurement data. On the basis of the detailed concentration and potential profiles provided by the model, the different modes of operation of the transistor are analyzed as well as the transitions between the different modes. The model correctly predicts the measured threshold voltage, which is explained in terms of membrane potentials. All in all, the results provide the basis for a detailed understanding of IBJT operation. This new knowledge is employed to discuss potential improvements of ion bipolar junction transistors in terms of miniaturization and device parameters.

  20. Single-dopant resonance in a single-electron transistor

    OpenAIRE

    Golovach, V. N.; Jehl, X.; Houzet, M.; Pierre, M.; Roche, B.; Sanquer, M.; Glazman, L. I.

    2011-01-01

    Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report coupling of a single As donor atom to a single-electron transistor (SET) in a silicon nanowire field-effect transistor. Both capacitive and tunnel coupling are achieved, the latter resulting in a dramatic increase of the conductance through the SET, by up to one order of magnitude. The experimental resu...

  1. Asymmetric tunable tunneling magnetoresistance in single-electron transistors

    CERN Document Server

    Pirmann, M; Schön, G

    2000-01-01

    We show that the tunneling magnetoresistance (TMR) of a ferromagnetic single-electron transistor in the sequential tunneling regime shows asymmetric Coulomb blockade oscillations as a function of gate voltage if the individual junction-TMRs differ. The relative amplitude of these oscillations grows significantly if the bias voltage is increased, becoming as large as 30% when the bias voltage is comparable to the charging energy of the single-electron transistor. This might be useful for potential applications requiring a tunable TMR.

  2. Effects of Strength vs. Ballistic-Power Training on Throwing Performance

    Science.gov (United States)

    Zaras, Nikolaos; Spengos, Konstantinos; Methenitis, Spyridon; Papadopoulos, Constantinos; Karampatsos, Giorgos; Georgiadis, Giorgos; Stasinaki, Aggeliki; Manta, Panagiota; Terzis, Gerasimos

    2013-01-01

    The purpose of the present study was to investigate the effects of 6 weeks strength vs. ballistic-power (Power) training on shot put throwing performance in novice throwers. Seventeen novice male shot-put throwers were divided into Strength (N = 9) and Power (n = 8) groups. The following measurements were performed before and after the training period: shot put throws, jumping performance (CMJ), Wingate anaerobic performance, 1RM strength, ballistic throws and evaluation of architectural and morphological characteristics of vastus lateralis. Throwing performance increased significantly but similarly after Strength and Power training (7.0-13.5% vs. 6.0-11.5%, respectively). Muscular strength in leg press increased more after Strength than after Power training (43% vs. 21%, respectively), while Power training induced an 8.5% increase in CMJ performance and 9.0 - 25.8% in ballistic throws. Peak power during the Wingate test increased similarly after Strength and Power training. Muscle thickness increased only after Strength training (10%, p Strength training by 19-26% (p training. Type IIx fibres (%) decreased after Strength but not after Power training. These results suggest that shot put throwing performance can be increased similarly after six weeks of either strength or ballistic power training in novice throwers, but with dissimilar muscular adaptations. Key points Ballistic-power training with 30% of 1RM is equally effective in increasing shot put performance as strength training, in novice throwers, during a short training cycle of six weeks. In novice shot putters with relatively low initial muscle strength/mass, short-term strength training might be more important since it can increase both muscle strength and shot put performance. The ballistic type of power training resulted in a significant increase of the mass of type IIx muscle fibres and no change in their proportion. Thus, this type of training might be used effectively during the last weeks before

  3. Evaluation of Obturator and Sealing Cuff Properties for the M865 Training Projectile with Comparison to Ballistic Testing

    National Research Council Canada - National Science Library

    Hoppel, C

    1999-01-01

    The nylon obturation and RTV sealing cuff for the M865 training round were evaluated to identity potential sources of ballistic variability associated with the material properties and material processing...

  4. System Requirements Analysis and Technological Support for the Ballistic Missile Defense System (BMDS) - FY07 Progress Report

    National Research Council Canada - National Science Library

    Auguston, M; Drusinsky, D; Hutchins, R; Knorr, J. B; Michael, J. B; Otani, T; Pace, P. E; Sting, M; Tummala, M; Cook, T

    2007-01-01

    ... the communication requirements of the net-centric Ballistic Missile Defense warfare, and the use of architectural patterns and other software technologies to shape the emergent behavior of the BMDS taking...

  5. Ultra-high gain diffusion-driven organic transistor

    Science.gov (United States)

    Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

    2016-01-01

    Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal–semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics. PMID:26829567

  6. Quantum Transport in Ultra-scaled Junctionless Transistors

    Science.gov (United States)

    Kim, Sunggeun; Luisier, Mathieu; Klimeck, Gerhard

    2012-02-01

    As the dimensions of metal-oxide-semiconductor field-effect transistors have been scaled down to a few nano-meters, short channel effects have started to significantly degrade their performance. The junctionless transistor is an alternative device structure which is expected to reduce short channel effects. However, an extreme device scaling raises another issue, namely, source-to-drain tunneling. Junctionless transistors contain several doping atoms in the channel which can enhance tunneling processes and cause electrons to scatter with them. Through self-consistent quantum transport simulations based on the tight-binding model with elelctron-phonon scattering included, it is found that junctionless nanowire transistors with a gate length of 5 nm do not outperform conventional inversion-mode transistors with the same dimension in terms of their on-state characteristics, mainly due to impurity scattering in the channel. The advantage of the junctionless transistor in the the subthreshold region vanishes due to large tunneling currents through doping impurities.

  7. Vertical Transistors Based on 2D Materials: Status and Prospects

    Directory of Open Access Journals (Sweden)

    Filippo Giannazzo

    2018-01-01

    Full Text Available Two-dimensional (2D materials, such as graphene (Gr, transition metal dichalcogenides (TMDs and hexagonal boron nitride (h-BN, offer interesting opportunities for the implementation of vertical transistors for digital and high-frequency electronics. This paper reviews recent developments in this field, presenting the main vertical device architectures based on 2D/2D or 2D/3D material heterostructures proposed so far. For each of them, the working principles and the targeted application field are discussed. In particular, tunneling field effect transistors (TFETs for beyond-CMOS low power digital applications are presented, including resonant tunneling transistors based on Gr/h-BN/Gr stacks and band-to-band tunneling transistors based on heterojunctions of different semiconductor layered materials. Furthermore, recent experimental work on the implementation of the hot electron transistor (HET with the Gr base is reviewed, due to the predicted potential of this device for ultra-high frequency operation in the THz range. Finally, the material sciences issues and the open challenges for the realization of 2D material-based vertical transistors at a large scale for future industrial applications are discussed.

  8. Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications

    KAUST Repository

    Yue, Wan

    2016-09-28

    Two new alternating copolymers, PAIIDBT and PAIIDSe have been prepared by incorporating a highly electron deficient azaisoindigo core. The molecular structure and packing of the monomer is determined from the single crystal X-ray diffraction. Both polymers exhibit high EAs and highly planar polymer backbones. When polymers are used as the semiconducting channel for solution-processed thin film transistor application, good properties are observed. A–A type PAIIDBT exhibits unipolar electron mobility as high as 1.0 cm2 V−1 s−1, D–A type PAIIDSe exhibits ambipolar charge transport behavior with predominately electron mobility up to 0.5 cm2 V−1 s−1 and hole mobility to 0.2 cm2 V−1 s−1. The robustness of the extracted mobility values are also commented on in detail. Molecular orientation, thin film morphology and energetic disorder of both polymers are systematically investigated.

  9. Ballistic strength training compared with usual care for improving mobility following traumatic brain injury: protocol for a randomised, controlled trial

    Directory of Open Access Journals (Sweden)

    Gavin Williams

    2016-07-01

    Discussion: Strength training in neurological rehabilitation is highly topical because muscle weakness has been identified as the primary impairment leading to mobility limitations in many neurological populations. This project represents the first international study of ballistic strength training after traumatic brain injury. The novelty of ballistic strength training is that the exercises attempt to replicate how lower limb muscles work, by targeting the high angular velocities attained during walking and higher level activities.

  10. Intégration de transistor mono-électronique et transistor à atome unique sur CMOS

    OpenAIRE

    Deshpande, Veeresh

    2012-01-01

    Continuous scaling of MOSFET dimensions has led us to the era of nanoelectronics. Multigate FET (MuGFET) architecture with ‘nanowire channel' is being considered as one feasible enabler of MOSFET scaling to end-of-roadmap. Alongside classical CMOS or Moore's law scaling, many novel device proposals exploiting nanoscale phenomena have been made either. Single Electron Transistor (SET), with its unique ‘Coulomb Blockade' phenomena, and Single Atom Transistor (SAT), as an ultimately scaled trans...

  11. Ultra-fast ballistic magnetization reversal triggered by a single magnetic field pulse

    Energy Technology Data Exchange (ETDEWEB)

    Horley, Paul P; Gonzalez Hernandez, Jesus [Centro de Investigacion en Materiales Avanzados S.C., Chihuahua/Monterrey, Av. Miguel de Cervantes 120, 31109 Chihuahua, Chihuahua (Mexico); Vieira, Vitor R; Dugaev, Vitalii K [Centro de Fisica das Interaccoes Fundamentais, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, Avenida Rovisco Pais, 1049-001 Lisbon (Portugal); Gorley, Peter [Department of Physics, Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky Street, 58012 Chernivtsi (Ukraine); Barnas, Jozef, E-mail: paul.horley@cimav.edu.m [Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznan (Poland)

    2009-12-21

    Performance of devices such as magnetic random access memories crucially depends on magnetic switching time. By numerical simulations we show that ultra-fast (in the sub-nanosecond range) magnetic reversal in nanoparticles can be achieved with a single pulse of magnetic field oriented at some specific angles with respect to the magnetic moment. These angles form the areas of ballistic reversal (with no magnetization ringing). We show that the size of these areas increases with decreasing pulse duration, which allows reaching of the sub-nanosecond reversal for a pulse duration of the order of dozen(s) of ps. When changing the magnetic field, the areas of ballistic reversal move along the equator of the unitary sphere, and eventually merge with each other. For appropriate choice of the azimuthal angle, one can reach magnetic reversal along a trajectory located in or out of the easy plane.

  12. Ballistic performance of a Kevlar-29 woven fibre composite under varied temperatures

    Science.gov (United States)

    Soykasap, O.; Colakoglu, M.

    2010-05-01

    Armours are usually manufactured from polymer matrix composites and used for both military and non-military purposes in different seasons, climates, and regions. The mechanical properties of the composites depend on temperature, which also affects their ballistic characteristics. The armour is used to absorb the kinetic energy of a projectile without any major injury to a person. Therefore, besides a high strength and lightness, a high damping capacity is required to absorb the impact energy transferred by the projectile. The ballistic properties of a Kevlar 29/polyvinyl butyral composite are investigated under varied temperatures in this study. The elastic modulus of the composite is determined from the natural frequency of composite specimens at different temperatures by using a damping monitoring method. Then, the backside deformation of composite plates is analysed experimentally and numerically employing the finite-element program Abaqus. The experimental and numeric results obtained are in good agreement.

  13. Nonlinear electron transport in InAs/AlGaSb three-terminal ballistic junctions

    International Nuclear Information System (INIS)

    Koyama, M; Inoue, T; Amano, N; Maemoto, T; Sasa, S; Inoue, M

    2008-01-01

    We have fabricated and characterized an InAs/AlGaSb three-terminal ballistic junction device. The fabricated device exhibited nonlinear electron transport properties because of ballistic motion of electrons in this structure that is comparable to the electron mean free path. When the left branch is biased to a finite voltage Vand the right to a voltage of -V (push-pull fashion), negative voltages appeared at the floating central branch regardless of the polarity of the input voltages. In the case of the central branch grounded in push-pull fashion, the clear current rectification effect also observed in the current flow of the central branch at 4.2K to even at 300K

  14. Study on Ballistic Absorbing Energy Character of High Performance Polyethylene Needle Felt

    Science.gov (United States)

    Kailiang, Zhu; Jianqiao, Fu

    2017-11-01

    The ballistic performance of polyethylene needle felt is tested and the failure morphology after test is also observed. The results showed that when the non-dimensionally non-stressed fibers in polyethylene needles are subjected to high-speed projectile, secondary movement such as stretching and twisting occurs first. This secondary movement is very full, it is the main way of ballistic absorbing energy of the polyethylene needle felt which can avoid the polyethylene fiber short-term rapid heating-up and destroyed. Analysis results show that under normal temperature and humidity conditions, the V50 of 6-layer forded polyethylene needle felt sample is 250m/s. At (450 ± 50) m/s speed range of the target missile, the mean value of the penetrative specific energy absorption for 3-layer forded polyethylene needle felt anti-1.1g simulated projectiles (tapered column) reaches 24.1J·m2/kg.

  15. Improved theory of generalized meteo-ballistic weighting factor functions and their use

    Directory of Open Access Journals (Sweden)

    Vladimir Cech

    2016-06-01

    Full Text Available It follows from the analysis of artillery fire errors that approximately two-thirds of the inaccuracy of indirect artillery fire is caused by inaccuracies in the determination of the meteo parameters included in fire error budget model. Trajectories calculated under non-standard conditions are considered to be perturbed. The tools utilized for the analysis of perturbed trajectories are weighting factor functions (WFFs which are a special kind of sensitivity functions. WFFs are used for calculation of meteo ballistic elements µB (ballistic wind wB, density ρB, virtual temperature τB, pressure pB as well. We have found that the existing theory of WFF calculation has several significant shortcomings. The aim of the article is to present a new, improved theory of generalized WFFs that eliminates the deficiencies found. Using this theory will improve methods for designing firing tables, fire control systems algorithms, and meteo message generation algorithms.

  16. Short Ballistic Josephson Coupling in Planar Graphene Junctions with Inhomogeneous Carrier Doping

    Science.gov (United States)

    Park, Jinho; Lee, Jae Hyeong; Lee, Gil-Ho; Takane, Yositake; Imura, Ken-Ichiro; Taniguchi, Takashi; Watanabe, Kenji; Lee, Hu-Jong

    2018-02-01

    We report on short ballistic (SB) Josephson coupling in junctions embedded in a planar heterostructure of graphene. Ballistic Josephson coupling is confirmed by the Fabry-Perot-type interference of the junction critical current Ic . The product of Ic and the normal-state junction resistance RN , normalized by the zero-temperature gap energy Δ0 of the superconducting electrodes, turns out to be exceptionally large close to 2, an indication of strong Josephson coupling in the SB junction limit. However, Ic shows a temperature dependence that is inconsistent with the conventional short-junction-like behavior based on the standard Kulik-Omel'yanchuk prediction. We argue that this feature stems from the effects of inhomogeneous carrier doping in graphene near the superconducting contacts, although the junction is in fact in the short-junction limit.

  17. Penetration of sandwich plates with hybrid-cores under oblique ballistic impact

    Directory of Open Access Journals (Sweden)

    Changye Ni

    2014-01-01

    Full Text Available The oblique penetration performance of lightweight hybrid-cored sandwich plates are investigated numerically. To compose the hybrid-core, ceramic prisms are inserted into pyramidal metal lattice trusses and fixed using epoxy resin. Three-dimensional finite element simulations are carried out for the hybridcored sandwich impacted at 15°, 30°, 45°, and 60° obliquity by a hemispherical projectile. The ballistic limit, the energy absorbed by the constituting elements, and the critical oblique angle are quantified. The physical mechanisms underlying the failure and the influence of fundamental system parameters are explored. The angle of obliquity is found to have significant influence on the ballistic trajectory and erosion of the projectile, thus it is important for the impact response and penetration resistance of the sandwich. For oblique angles equal to or larger than 45°, the projectile moves mainly horizontally and can not effectively penetrate across the sandwich.

  18. The National Guard Ballistic Missile Defense Mission minutemen at the Orgital Plane

    OpenAIRE

    Trenary, Ralph Hiram

    2004-01-01

    Approved for public release; distribution is unlimited This thesis examines the decision to assign the Ballistic Missile Defense mission to units of the Colorado and Alaska National Guard. The history of the Nike Ajax, Nike Hercules, Sentinel and Safeguard programs are examined to identify the origins of support for this decision. First-hand sources provide evidence that the National Guard performance in the Nike air defense program is a record of parity and some superiority to equivalent ...

  19. The face of war: The initial management of modern battlefield ballistic facial injuries

    OpenAIRE

    A Breeze; A J Gibbons

    2011-01-01

    There is an increased incidence of maxillofacial trauma in conflicts of the 21st century in comparison to those of the 20th century. This is attributed to the asymmetrical nature of modern war with the increased use of improvised explosive devices and improved thoraco-abdominal protection provided by current body armour. This paper aims to briefly review the principles of the initial management of modern battlefield ballistic injuries. The opinions given in this paper are those of the authors...

  20. Defense Science Board Task Force on Defense Strategies for Advanced Ballistic and Cruise Missile Threats

    Science.gov (United States)

    2017-01-01

    annual investment of about $2.5 billion. The study also recommended that the Department of Defense enhance its ab ility to perform the kinds of broad...homeland fundamentally change the nature of the problem to one of strategic deterrence and that the spirit of the terms of reference was more...adversary investments in regional, precision attack cruise and ballistic threaten that foundation, investments that have dramatically increased both