Magnetotransport properties in the magnetic phase of BaFe2 -xTxAs2 (T =Co ,Ni ) : A magnetic excitations approach

Science.gov (United States)

Peña, J. P.; Piva, M. M.; Rosa, P. F. S.; Pagliuso, P. G.; Adriano, C.; Grant, T.; Fisk, Z.; Baggio-Saitovitch, E.; Pureur, P.

2018-03-01

Because of their complex Fermi surfaces, the identification of the physical phenomena contributing to electronic scattering in the Fe-based superconductors is a difficult task. Here, we report on the electrical resistivity, magnetoresistance, and Hall effect in two series of BaFe2 -xTxAs2 (T =Co ,Ni ) crystals with different values of x . The T contents were chosen so that the majority of the investigated samples present an intermediate magnetically ordered state and a superconducting ground state. We interpret the obtained results in terms of scattering of charge carriers by magnetic excitations instead of describing them as resulting uniquely from effects related to multiple-band conduction. Our samples are single crystals from the structural point of view and their overall magnetotransport properties are dominated by a single magnetic state.

Tuning the magnetism of the top-layer FeAs on BaFe2As2 (001): First-principles study

Science.gov (United States)

Zhang, Bing-Jing; Liu, Kai; Lu, Zhong-Yi

2018-04-01

Magnetism may play an important role in inducing the superconductivity in iron-based superconductors. As a prototypical system, the surface of BaFe2As2 provides a good platform for studying related magnetic properties. We have designed systematic first-principles calculations to clarify the surface magnetism of BaFe2As2 (001), which previously has received little attention in comparison with surface structures and electronic states. We find that the surface environment has an important influence on the magnetic properties of the top-layer FeAs. For As-terminated surfaces, the magnetic ground state of the top-layer FeAs is in the staggered dimer antiferromagnetic (AFM) order, distinct from that of the bulk, while for Ba-terminated surfaces the collinear (single-stripe) AFM order is the most stable, the same as that in the bulk. When a certain coverage of Ba or K atoms is deposited onto the As-terminated surface, the calculated energy differences among different AFM orders for the top-layer FeAs on BaFe2As2 (001) can be much reduced, indicating enhanced spin fluctuations. To compare our results with available scanning tunneling microscopy (STM) measurements, we have simulated the STM images of several structural/magnetic terminations. Astonishingly, when the top-layer FeAs is in the staggered dimer AFM order, a stripe pattern appears in the simulated STM image even when the surface Ba atoms adopt a √{2 }×√{2 } structure, while a √{2 }×√{2 } square pattern comes out for the 1 ×1 full As termination. Our results suggest: (i) the magnetic state at the BaFe2As2 (001) surface can be quite different from that in the bulk; (ii) the magnetic properties of the top-layer FeAs can be tuned effectively by surface doping, which may likely induce superconductivity at the surface layer; (iii) both the surface termination and the AFM order in the top-layer FeAs can affect the STM image of BaFe2As2 (001), which needs to be taken into account when identifying the surface

Evidence for a vortex-glass transition in superconducting Ba(Fe0.9Co0.1)2As2.

Science.gov (United States)

Prando, G; Giraud, R; Aswartham, S; Vakaliuk, O; Abdel-Hafiez, M; Hess, C; Wurmehl, S; Wolter, A U B; Büchner, B

2013-12-18

Measurements of magneto-resistivity and magnetic susceptibility were performed on single crystals of superconducting Ba(Fe0.9Co0.1)2As2 close to the conditions of optimal doping. The high quality of the investigated samples allows us to reveal dynamic scaling behaviour associated with a vortex-glass phase transition in the limit of a weak degree of quenched disorder. Accordingly, the dissipative component of the ac susceptibility is reproduced well within the framework of Havriliak-Negami relaxation, assuming a critical power-law divergence for the characteristic correlation time τ of the vortex dynamics. Remarkably, the random disorder introduced by the Fe1-xCox chemical substitution is found to act on the vortices as a much weaker quenched disorder than previously reported for cuprate superconductors such as Y1-xPrxBa2Cu3O7-δ.

In-plane anisotropy of the electric field gradient in Ba(Fe 1 -xCox)2As2 observed by 75As NMR

Science.gov (United States)

Toyoda, Masayuki; Ichikawa, Akihiro; Kobayashi, Yoshiaki; Sato, Masatoshi; Itoh, Masayuki

2018-05-01

We have performed 75As NMR measurements on single crystals to investigate the nematic behavior via the in-plane anisotropy of the electronic state at the As site far from Co impurities in the representative iron arsenides Ba (Fe1-xCox) 2As2 . From the analysis of the angular dependence of the NMR satellites in the c plane using the binominal distribution, we find that there is the in-plane fourfold symmetry breaking, namely, the orthorhombic-type anisotropy in the electric field gradient (EFG) at the As site with no Co atom at the nearest neighboring Fe sites even in the tetragonal phase of both BaFe2As2 and Ba (Fe1-xCox) 2As2(x ≠0 ) . The NMR spectrum in the antiferromagnetically ordered state of BaFe2As2 is shown not to support a nanotwin model on the basis of the nematic order proposed from the pair-distribution analysis of neutron scattering data. Based on results of the x and temperature T dependences of the in-plane anisotropy in the wide x and T ranges, the symmetry breaking is concluded to come from the local orthorhombic domains induced by disorder such as Co impurities or lattice imperfections. Furthermore, we find that the asymmetry parameter of EFG η obeys the Curie-Weiss law which may be governed by nematic susceptibility, and the Weiss temperature becomes zero at xc˜0.05 in Ba (Fe1-xCox) 2As2 .

Growing barium hexaferrite (BaFe_1_2O_1_9) thin films using chemical solution deposition

International Nuclear Information System (INIS)

Budiawanti, Sri; Soegijono, Bambang

2016-01-01

Barium hexaferrite (BaFe_1_2O_1_9, or simply known as BaM) thin films has been recognized as a potential candidate for microwave-based devices, magnetic recording media and data storage. To grow BaM thin films, chemical solution deposition is conducted using the aqueous solution of metal nitrates, which involves spin coatings on Si substrates. Furthermore, Thermal Gravimeter Analysis (TGA), X-Ray Diffractometer (XRD), Scanning Electron Microscopy (SEM) and Vibrating Sample Magnetometer (VSM) are applied to evaluate the decomposition behavior, structure, morphology, and magnetic properties of BaM thin films. Additionally, the effects of number of layers variation are also investigated. Finally, magnetic properties analysis indicates the isotropic nature of the films.

Thermal annealing and pressure effects on BaFe2-xCoxAs2 single crystals.

Science.gov (United States)

Shin, Dongwon; Jung, Soon-Gil; Prathiba, G; Seo, Soonbeom; Choi, Ki-Young; Kim, Kee Hoon; Park, Tuson

2017-11-26

We investigate the pressure and thermal annealing effects on BaFe_2-xCo_xAs₂ (Co-Ba122) single crystals with x = 0.1 and 0.17 via electrical transport measurements. The thermal annealing treatment not only enhances the superconducting transition temperature (T_c) from 9.6 to 12.7 K for x = 0.1 and from 18.1 to 21.0 K for x = 0.17, but also increases the antiferromagnetic transition temperature (T_N). Simultaneous enhancement of T_c and T_N by the thermal annealing treatment indicates that thermal annealing could substantially improve the quality of the Co-doped Ba122 samples. Interestingly, T_c of the Co-Ba122 compounds shows a scaling behavior with a linear dependence on the resistivity value at 290 K, irrespective of tuning parameters, such as chemical doping, pressure, and thermal annealing. These results not only provide an effective way to access the intrinsic properties of the BaFe₂As₂ system, but also may shed a light on designing new materials with higher superconducting transition temperature. © 2017 IOP Publishing Ltd.

Superconducting gap symmetry in the superconductor BaFe1.9Ni0.1As2

Science.gov (United States)

Kuzmicheva, T. E.; Kuzmichev, S. A.; Sadakov, A. V.; Gavrilkin, S. Yu.; Tsvetkov, A. Yu.; Lu, X.; Luo, H.; Vasiliev, A. N.; Pudalov, V. M.; Chen, Xiao-Jia; Abdel-Hafiez, Mahmoud

2018-06-01

We report on the Andreev spectroscopy and specific heat of high-quality single crystals of BaFe1.9Ni0.1As2 . The intrinsic multiple Andreev reflection spectroscopy reveals two anisotropic superconducting gaps ΔL≈3.2 -4.5 meV , ΔS≈1.2 -1.6 meV (the ranges correspond to the minimum and maximum value of the coupling energy in the kxky plane). The 25 %-30 % anisotropy shows the absence of nodes in the superconducting gaps. Using a two-band model with s -wave-like gaps ΔL≈3.2 meV and ΔS≈1.6 meV , the temperature dependence of the electronic specific heat can be well described. A linear magnetic field dependence of the low-temperature specific heat offers further support of s -wave type of the order parameter. We find that a d -wave or single-gap BCS theory under the weak-coupling approach cannot describe our experiments.

Spin and lattice structures of single-crystalline SrFe2As2

Science.gov (United States)

Zhao, Jun; Ratcliff, W., II; Lynn, J. W.; Chen, G. F.; Luo, J. L.; Wang, N. L.; Hu, Jiangping; Dai, Pengcheng

2008-10-01

We use neutron scattering to study the spin and lattice structure of single-crystal SrFe2As2 , the parent compound of the FeAs-based superconductor (Sr,K)Fe2As2 . We find that SrFe2As2 exhibits an abrupt structural phase transition at 220 K, where the structure changes from tetragonal with lattice parameters c>a=b to orthorhombic with c>a>b . At almost the same temperature, Fe spins develop a collinear antiferromagnetic structure along the orthorhombic a axis with spin direction parallel to this a axis. These results are consistent with earlier work on the RFeAsO ( R=rare earth) families of materials and on BaFe2As2 , and therefore suggest that static antiferromagnetic order is ubiquitous for the parent compounds of these FeAs-based high-transition temperature superconductors.

Electronic structure of BaFe2As2 as obtained from DFT/ASW first-principles calculations

KAUST Repository

Schwingenschlö gl, Udo; Di Paola, Cono

2010-01-01

We use ab-initio calculations based on the augmented spherical wave method within density functional theory to study the magnetic ordering and Fermi surface of BaFe2As2, the parent compound of the hole-doped iron pnictide superconductors (K,Ba)Fe2As

Doping dependence of magnetic and transport properties in single crystalline Co-doped BaFe2As2

International Nuclear Information System (INIS)

Nakajima, Yasuyuki; Taen, Toshihiro; Tamegai, Tsuyoshi

2010-01-01

We report the doping dependence of transport and magnetic properties in Co-doped BaFe 2 As 2 . With increasing Co concentration x, structural and magnetic transitions are suppressed and superconductivity emerges in the range of 0.3 c at low temperatures and low fields obtained from bulk magnetization is reasonably large and the doping dependence shows a maximum at x∼0.07 similar to T c . The values of J c at low temperatures reach about 1x10 6 A/cm 2 around the optimally doped region, which is potentially attractive for technological applications.

Accurate projected augmented wave datasets for BaFe2As2

International Nuclear Information System (INIS)

Cao Chao; Wu Yuing; Hamdan, Rashid; Wang, Yunpeng; Cheng Haiping

2010-01-01

By carefully choosing parameters and including more semi-core orbitals as valence electrons, we have constructed a high-quality projected augmented wave dataset that yields results comparable to existing full-potential linearized augmented plane-wave calculations. The dataset was then applied to BaFe 2 As 2 to study the effects of different levels of structure optimization, as well as different choices of exchange-correlation functionals. It was found that the local density approximation exchange-correlation functional fails to find the correct spin-density-wave anti-ferromagnetic (SDW-AFM) ground state under full optimization, while the Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional obtains the correct state but significantly overestimates the magnetism. The electronic structure of the SDW-AFM state is not very sensitive to structure optimizations with the PBE exchange-correlation functional because the positions of the As atoms are preserved under optimizations. We further investigated the Ba atom diffusion process on the BaFe 2 As 2 surface using the nudged elastic bands method. The Ba atom was found to be stable above the center of the squares formed by the surface As atoms, and a diffusion barrier of 1.2 eV was found. Our simulated scanning tunneling microscopy image suggests an ordered surface Ba atom structure, in agreement with Massee et al (2009 Phys. Rev. B 80 140507; van Heumen E et al 2010 arXiv:1009.3493v1).

Muon spin rotation study of magnetism and superconductivity in Ba(Fe₁-_xCo_x)₂As₂ single crystals

OpenAIRE

Bernhard, C.; Wang, C. N.; Nuccio, L.; Schulz, L.; Zaharko, O.; Larsen, Jacob; Aristizabal, C.; Willis, M.; Drew, A. J.; Varma, G. D.; Wolf, T.; Niedermayer, Ch.

2012-01-01

Using muon spin rotation (μSR) we investigated the magnetic and superconducting properties of a series of Ba(Fe1−xCox)2As2 single crystals with 0 ≤x ≤0.15. Our study details how the antiferromagnetic order is suppressed upon Co substitution and how it coexists with superconductivity. In the nonsuperconducting samples at 0

Measurements on very small single crystals of NdFeB using a vibrating reed magnetometer

International Nuclear Information System (INIS)

Richter, H.J.; Hempel, K.A.; Verhoef, R.

1988-01-01

Nd 2 Fe 14 B single crystals with magnetic moments ranging from 1.6 x 10 -8 Acm 2 to 9.5 x 10 -7 Acm 2 are measured using the ultra high sensitivity vibrating reed magnetometer. The hysteresis loops are compared to those of BaFe 12 O 19 single crystals. It turns out that the magnetization reversal of the Nd 2 Fe 14 B samples is similar to that of BaFe 12 O 19 single crystals if the ferrite samples are considerably bigger in size. This does not hold for bigger Nd 2 Fe 14 B particles where stronger domain wall pinning is observed. For very small grains of Nd 2 Fe 14 B there is still evidence of domain wall processes while for BaFe 12 O 19 grains of the same size true single domain behaviour can be observed

Symmetry-Breaking Orbital Anisotropy Observed for Detwinned Ba(Fe1-xCox)2As2 above the Spin Density Wave Transition

International Nuclear Information System (INIS)

Yi, Ming

2011-01-01

Nematicity, defined as broken rotational symmetry, has recently been observed in competing phases proximate to the superconducting phase in the cuprate high temperature superconductors. Similarly, the new iron-based high temperature superconductors exhibit a tetragonal to orthorhombic structural transition (i.e. a broken C 4 symmetry) that either precedes or is coincident with a collinear spin density wave (SDW) transition in undoped parent compounds, and superconductivity arises when both transitions are suppressed via doping. Evidence for strong in-plane anisotropy in the SDW state in this family of compounds has been reported by neutron scattering, scanning tunneling microscopy, and transport measurements. Here we present an angle resolved photoemission spectroscopy study of detwinned single crystals of a representative family of electron-doped iron-arsenide superconductors, Ba(Fe 1-x Co x ) 2 As 2 in the underdoped region. The crystals were detwinned via application of in-plane uniaxial stress, enabling measurements of single domain electronic structure in the orthorhombic state. At low temperatures, our results clearly demonstrate an in-plane electronic anisotropy characterized by a large energy splitting of two orthogonal bands with dominant d xz and d yz character, which is consistent with anisotropy observed by other probes. For compositions x > 0, for which the structural transition (T S ) precedes the magnetic transition (T SDW ), an anisotropic splitting is observed to develop above T SDW , indicating that it is specifically associated with T S . For unstressed crystals, the band splitting is observed close to T S , whereas for stressed crystals the splitting is observed to considerably higher temperatures, revealing the presence of a surprisingly large in-plane nematic susceptibility in the electronic structure.

Preparation and characterization of Bi2Sr2CaCu2O8+δ thin films on MgO single crystal substrates by chemical solution deposition

DEFF Research Database (Denmark)

Grivel, Jean-Claude; Kepa, Katarzyna; Hlásek, T.

2013-01-01

Bi2Sr2CaCu2O8 thin films have been deposited on MgO single crystal substrates by spin-coating a solution based on 2-ethylhexanoate precursors. Pyrolysis takes place between 200°C and 450°C and is accompanied by the release of 2-ethylhexanoic acid, CO2 and H2O vapour. Highly c-axis oriented Bi2Sr2Ca...

Muon Spin Relaxation Studies of RFeAsO and MFe2As2 Based Compounds

Science.gov (United States)

Luke, Graeme

2010-03-01

Muon spin relaxation measurements of a variety of iron pnictide systems have revealed commensurate long range magnetic order in the parent compounds which can change to incommensurate order with carrier doping. Magnetic order gives way to superconductivity with increased doping; however there are regions of the phase diagrams where the two phenomena co-exist. In the case of Ba1-xKxFe2As2 there is phase separation into superconducting and magnetic domains, whereas in Ba(Fe1-xCox)2As2 the coexistence is apparently microscopic for x=0.035->0.048. Transverse field muon spin rotation measurements of single crystal Ba(Fe1-xCox)2 and Sr(Fe1-xCox)2 exhibit an Abrikosov vortex lattice from which we are able to determine the magnetic field penetration depth and Ginzburg-Landau parameter. The temperature variation of the superfluid density is well described by a two-gap model. In Ba(Fe1-xCox)2As2, both the superconducting TC and the superfluid density decrease with increasing doping above x=0.06; in all of the pnictides we find that the superfluid density obeys the same nearly linear scaling with TC as found in the cuprates.

Electronic structure of BaFe2As2 as obtained from DFT/ASW first-principles calculations

KAUST Repository

Schwingenschlögl, Udo

2010-07-02

We use ab-initio calculations based on the augmented spherical wave method within density functional theory to study the magnetic ordering and Fermi surface of BaFe2As2, the parent compound of the hole-doped iron pnictide superconductors (K,Ba)Fe2As2, for the tetragonal I4/mmm as well as the orthorhombic Fmmm structure. In comparison to full potential linear augmented plane wave calculations, we obtain significantly smaller magnetic energies. This finding is remarkable, since the augmented spherical wave method, in general, is known for a most reliable description of magnetism. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Carrier dynamics of Ba(Fe1-xCox)2As2 as a function of doping

International Nuclear Information System (INIS)

Muschler, Bernhard

2012-01-01

In this thesis a systematic light scattering study of the newly discovered iron-based superconductor Ba(Fe 1-x Co x ) 2 As 2 is presented. The main focus is placed on the study of electronic properties in a doping range x in which magnetism and superconductivity are in close proximity. The experiment affords a window into band and momentum-dependent electronic properties. The magnetic order is predominantly itinerant. The structure of the superconducting gap indicates that the coupling potential may result from magnetic fluctuations.

Critical current densities and vortex dynamics in FeTexSe1-x single crystals

International Nuclear Information System (INIS)

Taen, T.; Tsuchiya, Y.; Nakajima, Y.; Tamegai, T.

2010-01-01

The critical current density and the normalized relaxation rate are reported in FeTe 0.59 Se 0.41 single crystal. Critical current density is of order of 10 5 A/cm 2 , which is comparable to that in Co-doped BaFe 2 As 2 . In low temperature and low field region, the vortex dynamics of this system is well defined by the collective creep theory, which is quite similar to Co-doped BaFe 2 As 2 reported before. We also discuss the origin of the anomaly in the field dependence of the relaxation rate.

Raman analysis of gold on WSe2 single crystal film

International Nuclear Information System (INIS)

Mukherjee, Bablu; Sun Leong, Wei; Li, Yida; Thong, John T L; Gong, Hao; Sun, Linfeng; Xiang Shen, Ze; Simsek, Ergun

2015-01-01

Synthesis and characterization of high-quality single-crystal tungsten diselenide (WSe 2 ) films on a highly insulating substrate is presented. We demonstrate for the first time that the presence of gold (Au) nanoparticles in the basal plane of a WSe 2 film can enhance its Raman scattering intensity. The experimentally observed enhancement ratio in the Raman signal correlates well with the simulated electric field intensity using both three-dimensional electromagnetic software and theoretical calculation considering layered medium coupled-dipole approximation (LM-CDA). This work serves as a guideline for the use of Au nanoparticles on WSe 2 single-crystal thin films for surface enhanced Raman scattering (SERS) applications in the future. (paper)

Growth and characterizations of Ba2Ti2Fe2As4O single crystals

Directory of Open Access Journals (Sweden)

Yun-Lei Sun, Abduweli Ablimit, Jin-Ke Bao, Hao Jiang, Jie Zhou and Guang-Han Cao

2013-01-01

Full Text Available Single crystals of a new iron-based superconductor Ba2Ti2Fe2As4O have been grown successfully via a Ba2As3-flux method in a sealed evacuated quartz tube. Bulk superconductivity with Tc ~ 21.5 K was demonstrated in resistivity and magnetic susceptibility measurements after the as-grown crystals were annealed at 500 °C in vacuum for a week. X-ray diffraction patterns confirm that the annealed and the as-grown crystals possess the identical crystallographic structure of Ba2Ti2Fe2As4O. Energy-dispersive x-ray spectra indicate that partial Ti/Fe substitution exists in the [Fe2As2] layers and the annealing process redistributes the Ti within the Fe-plane. The ordered Fe-plane stabilized by annealing exhibits superconductivity with magnetic vortex pinned by Ti.

Paramagnetic Spin Correlations in CaFe2As2 Single Crystals

International Nuclear Information System (INIS)

Omar Diallo, Souleymane; Pratt, Daniel; Fernandes, Rafael; Tian, Wei; Zarestky, J.L.; Lumsden, Mark D.; Perring, T.G.; Broholm, C.; Ni, Ni; Budko, S.L.; Canfield, Paul; Li, Haifeng; Vaknin, D.; Kreyssig, A.; Goldman, A.I.; Mcqueeney, R.J.

2010-01-01

Magnetic correlations in the paramagnetic phase of CaFe2As2(TN=172 K) have been examined by means of inelastic neutron scattering from 180 K ( 1.05TN) up to 300 K (1.8TN). Despite the first-order nature of the magnetic ordering, strong but short-ranged antiferromagnetic (AFM) correlations are clearly observed. These correlations, which consist of quasielastic scattering centered at the wave vector QAFM of the low-temperature AFM structure, are observed up to the highest measured temperature of 300 K and at high energy transfer ( >60 meV). The L dependence of the scattering implies rather weak interlayer coupling in the tetragonal c direction corresponding to nearly two-dimensional fluctuations in the (ab) plane. The spin correlation lengths within the Fe layer are found to be anisotropic, consistent with underlying fluctuations of the AFM stripe structure. Similar to the cobalt-doped superconducting BaFe2As2 compounds, these experimental features can be adequately reproduced by a scattering model that describes short-ranged and anisotropic spin correlations with overdamped dynamics.

Sequential structural and antiferromagnetic transitions in BaFe2Se3 under pressure

Science.gov (United States)

Zhang, Yang; Lin, Ling-Fang; Zhang, Jun-Jie; Dagotto, Elbio; Dong, Shuai

2018-01-01

The discovery of superconductivity in the two-leg ladder compound BaFe2S3 has established the 123-type iron chalcogenides as a novel and interesting subgroup of the iron-based superconductor family. However, in this 123 series, BaFe2Se3 is an exceptional member, with a magnetic order and crystalline structure different from all others. Recently, an exciting experiment reported the emergence of superconductivity in BaFe2Se3 at high pressure [J. Ying et al., Phys. Rev. B 95, 241109(R) (2017), 10.1103/PhysRevB.95.241109]. In this paper, we report a first-principles study of BaFe2Se3 . Our analysis unveils a variety of qualitative differences between BaFe2S3 and BaFe2Se3 , including in the latter an unexpected chain of transitions with increasing pressure. First, by gradually reducing the tilting angle of iron ladders, the crystalline structure smoothly transforms from P n m a to C m c m at ˜6 GPa. Second, the system becomes metallic at 10.4 GPa. Third, its unique ambient-pressure Block antiferromagnetic ground state is replaced by the more common stripe (so-called CX-type) antiferromagnetic order at ˜12 GPa, the same magnetic state as the 123-S ladder. This transition is found at a pressure very similar to the experimental superconducting transition. Finally, all magnetic moments vanish at 30 GPa. This reported theoretical diagram of the complete phase evolution is important because of the technical challenges to capture many physical properties in high-pressure experiments. The information obtained in our calculations suggests different characteristics for superconductivity in BaFe2Se3 and BaFe2S3 : in 123-S pairing occurs when magnetic moments vanish, while in 123-Se the transition region from Block- to CX-type magnetism appears to catalyze superconductivity. Finally, an additional superconducting dome above ˜30 GPa is expected to occur.

Measurements of the superconducting fluctuations in optimally doped BaFe2−xNixAs2 under high magnetic fields: probing the 3D-anisotropic Ginzburg–Landau approach

International Nuclear Information System (INIS)

Rey, R I; Ramos-Álvarez, A; Carballeira, C; Mosqueira, J; Vidal, F; Salem-Sugui, S Jr.; Alvarenga, A D; Zhang, Rui; Luo, Huiqian

2014-01-01

The superconducting fluctuations well inside the normal state of Fe-based superconductors were experimentally studied through the in-plane paraconductivity in several high-quality, optimally doped BaFe 2−x Ni x As 2 crystals. These measurements were performed in magnetic fields with amplitudes up to 14 T, and different orientations relative to the c-axis of the crystals (θ=0 ∘ , 53 ∘ , and 90 ∘ ). The results allowed a stringent check of the applicability of a recently proposed Ginzburg–Landau approach for the fluctuating electrical conductivity of three-dimensional (3D) anisotropic materials in the presence of finite applied magnetic fields. (papers)

Microstructure and transport properties of [0 0 1]-tilt bicrystal grain boundaries in iron pnictide superconductor, cobalt-doped BaFe2As2

International Nuclear Information System (INIS)

Hiramatsu, Hidenori; Katase, Takayoshi; Ishimaru, Yoshihiro; Tsukamoto, Akira; Kamiya, Toshio; Tanabe, Keiichi; Hosono, Hideo

2012-01-01

Relationships between microstructure and transport properties of bicrystal grain boundary (BGB) junctions were studied in cobalt-doped BaFe 2 As 2 (BaFe 2 As 2 :Co) epitaxial films grown on [0 0 1]-tilt bicrystal substrates of MgO and (La, Sr)(Al, Ta)O 3 with misorientation angles θ GB = 3–45°. The θ GB of BaFe 2 As 2 :Co BGBs were exactly transferred from those of the bicrystal substrates. No segregation of impurities was detected at the BGB junction interfaces, and the chemical compositions of the BGBs were uniform and the same as those in the bulk film regions. A transition from a strongly-coupled GB behavior to a weak-link behavior was observed in current density–voltage characteristics under self-field around θ GB ∼ 9°. The critical current density decreased from (1.2–1.6) × 10 6 A/cm 2 of the intragrain transport to (0.7–1.1) × 10 5 A/cm 2 of θ GB = 45° because supercurrent becomes more governed by Josephson current with increasing θ GB .

Magnetism and superconductivity in CeFe2-xTxAs2 (T = Co and Ni) single crystals

International Nuclear Information System (INIS)

Thamizhavel, A.

2010-01-01

Single crystals of pure and transition metal doped CaFe 2- x T x As 2 (T = Co and Ni) have been grown by flux method using molten Sn as solvent. The magnetic and superconducting properties of the grown crystals were studied by measuring the electrical resistivity, magnetic susceptibility and neutron diffraction measurements. A spin density wave (SDW)/structural transition is observed at 170 K for the pure CaFe 2 As 2 single crystal and it gets suppressed with T (Co and Ni) doping. For an optimum dopant concentration of x = 0.06, the sample becomes superconducting. From the detailed studies on CaFe 2- x Ni x As 2 single crystals we have constructed a magnetic phase diagram. (author)

Structural feature controlling superconductivity in compressed BaFe2As2

International Nuclear Information System (INIS)

Yang, Wenge; Jia, Feng-Jiang; Tang, Ling-Yun; Tao, Qian; Xu, Zhu-An; Chen, Xiao-Jia

2014-01-01

Superconductivity can be induced with the application of pressure but it disappears eventually upon heavy compression in the iron-based parent compound BaFe 2 As 2 . Structural evolution with pressure is used to understand this behavior. By performing synchrotron X-ray powder diffraction measurements with diamond anvil cells up to 26.1 GPa, we find an anomalous behavior of the lattice parameter with a S shape along the a axis but a monotonic decrease in the c-axis lattice parameter with increasing pressure. The close relationship between the axial ratio c/a and the superconducting transition temperature T c is established for this parent compound. The c/a ratio is suggested to be a measure of the spin fluctuation strength. The reduction of T c with the further increase of pressure is a result of the pressure-driven weakness of the spin-fluctuation strength in this material

Tetragonal To Collapsed Tetragonal Phase Transition In BaFe2As2 and CaFe2As2

International Nuclear Information System (INIS)

Mittal, R.; Mishra, S. K.; Chaplot, S. L.; Ovsyannikov, S. V.; Trots, D. M.; Dubrovinsky, L.; Greenberg, E.; Su, Y.; Brueckel, Th.; Matsuishi, S.; Hosono, H.; Garbarino, G.

2010-01-01

Superconductivity in MFe 2 As 2 (M = Ba, Ca) compounds appears either at a critical doping level at ambient pressure or in the parent compound itself by application of pressure above a critical value. We report high pressure powder x-ray diffractions studies for these compounds at 300 K up to about 56 GPa using membrane diamond anvil cells. The measurements for BaFe 2 As 2 show a new tetragonal to collapsed tetragonal phase transition at about 22 GPa that remains stable upto 56 GPa. CaFe 2 As 2 is already known to transform to collapsed phase at 1.7 GPa at 300 K. Our measurements on CaFe 2 As 2 do not show any post collapsed phase transition on increase of pressure 50 GPa at 300 K. It is important to note that the transition in both compounds occurs when they are compressed to almost the same value of the unit cell volume and attain similar c t /a t ratios. We present a detailed analysis of the pressure dependence and structure phase transitions as well as equation of state in these important FeAs compounds that should be useful in the context of possible superconductivity in the collapsed phase.

Transistor properties of exfoliated single crystals of 2 H -Mo (Se1-xT ex ) 2(0 ≤x ≤1 )

Science.gov (United States)

Uesugi, Eri; Miao, Xiao; Ota, Hiromi; Goto, Hidenori; Kubozono, Yoshihiro

2017-06-01

Field-effect transistors (FETs) were fabricated using exfoliated single crystals of Mo (Se1-xT ex) 2 with an x range of 0 to 1, and the transistor properties fully investigated at 295 K in four-terminal measurement mode. The chemical composition and crystal structure of exfoliated single crystals were identified by energy-dispersive x-ray spectroscopy (EDX), single-crystal x-ray diffraction, and Raman scattering, suggesting the 2 H - structure in all Mo (Se1-xT ex) 2 . The lattice constants of a and c increase monotonically with increasing x , indicating the substitution of Se by Te. When x 0.4 . In contrast, the polarity of a thick single-crystal Mo (Se1-xT ex) 2 FET did not change despite an increase in x . The change of polarity in a thin single-crystal FET was well explained by the variation of electronic structure. The absence of such change in the thick single-crystal FET can be reasonably interpreted based on the large bulk conduction due to naturally accumulated electrons. The μ value in the thin single-crystal FET showed a parabolic variation, with a minimum μ at around x =0.4 , which probably originates from the disorder of the single crystal caused by the partial replacement of Se by Te, i.e., a disorder that may be due to ionic size difference of Se and Te.

Photoinduced Optical Spectroscopy of La2CuO4+x Single Crystals and C60 Thin Films

International Nuclear Information System (INIS)

Bazhenov, A.V.; Gorbunov, A.V.; Timofeev, V.B.

1995-01-01

The evolution of both vibration and electronic spectra of insulating La 2 CuO 4+x single crystals upon charge-transfer gap photoexcitation has been studied by means of photoinduced reflection spectroscopy. Interaction of self-localized hole with some of the A g , B 2g (B 3g ), B 3u optical phonons has been observed. Formation of self-localized hole state and its multiparticle complexes is supposed. Photoinduced absorption in C 60 thin films has been found to differ essentially from that in cuprates

X-ray dosimetry of TlGaSe2 single crystals

International Nuclear Information System (INIS)

Kerimova, E.M.; Mustafaeva, S.N.; Mamedbeili, S.D.; Jabarov, J.N.; Iskenderova, P.M.; Kazimov, S.B.

2002-01-01

TlGaSe 2 compound belongs to group of layered semiconductors of A 3 B 3 C 2 6 -type. Photoelectric and optical properties of TlGaSe 2 single crystals were investigated in detail. Influence of gamma-, electron and neutron radiation on photoelectric properties of TlGaSe 2 single crystals is investigated too. The present work deals with experimental results relative to X-ray dosimetric characteristics of TlGaSe 2 crystals at 300 K. X-ray conductivity and X-ray dosimetric characteristic measurements are carried out in low load resistance regime. The source of X-ray radiation is the installation of X-ray diffraction analysis (URS-55a) with the BCV-2(Cu). Intensity of X-ray radiation (E) is regulated by measurement with current variation in tube at each given value of X-ray radiation dose E (R/min) are measured by crystal dosimeter DRGZ-02. X-ray conductivity coefficients K σ characterising X-ray sensitivity of investigated crystals are determined as the relative change of conductivity under X-ray radiation a per dose. There have been determined values of characteristic coefficients of TlGaSe 2 single crystal X-ray conductivity at different values of accelerating voltage (V a ) on the tube and corresponding doses of X-ray radiation. Analysis of obtained data showed that X-ray conductivity coefficients K σ in studied crystals are regularly decreased (from 0.276 to 0.033) as with the rise of dose (E=0.75-78.0 R/min) as with the increase of values of V a on X-ray tube (V a =254-50 keV). One of the possible reasons of observed regularities is that X-ray conductivity in investigated crystals, especially at comparatively low V a is due predominantly to radiation of thin layer of crystal. In this case with the rise of radiation intensity there have been started to prevail the mechanism of surface quadratic recombination which leads to observed decrease of X-ray conductivity. With the rise of accelerating potential 'effective hardness' is increased, as a result of which there

Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

Energy Technology Data Exchange (ETDEWEB)

Cho, Minkyu; Seo, Jung-Hun; Lee, Jaeseong; Mi, Hongyi; Kim, Munho; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhao, Deyin; Zhou, Weidong [Nanophotonics Lab, Department of Electrical Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States); Yin, Xin; Wang, Xudong [Department of Material Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2015-05-04

In this paper, we report ultra-thin distributed Bragg reflectors (DBRs) via stacked single-crystal silicon (Si) nanomembranes (NMs). Mesh hole-free single-crystal Si NMs were released from a Si-on-insulator substrate and transferred to quartz and Si substrates. Thermal oxidation was applied to the transferred Si NM to form high-quality SiO{sub 2} and thus a Si/SiO{sub 2} pair with uniform and precisely controlled thicknesses. The Si/SiO{sub 2} layers, as smooth as epitaxial grown layers, minimize scattering loss at the interface and in between the layers. As a result, a reflection of 99.8% at the wavelength range from 1350 nm to 1650 nm can be measured from a 2.5-pair DBR on a quartz substrate and 3-pair DBR on a Si substrate with thickness of 0.87 μm and 1.14 μm, respectively. The high reflection, ultra-thin DBRs developed here, which can be applied to almost any devices and materials, holds potential for application in high performance optoelectronic devices and photonics applications.

Longitudinal Spin Excitations and Magnetic Anisotropy in Antiferromagnetically Ordered BaFe_{2}As_{2}

Directory of Open Access Journals (Sweden)

Chong Wang

2013-12-01

Full Text Available We report on a spin-polarized inelastic neutron-scattering study of spin waves in the antiferromagnetically ordered state of BaFe_{2}As_{2}. Three distinct excitation components are identified, with spins fluctuating along the c axis, perpendicular to the ordering direction in the ab plane and parallel to the ordering direction. While the first two “transverse” components can be described by a linear spin-wave theory with magnetic anisotropy and interlayer coupling, the third “longitudinal” component is generically incompatible with the local-moment picture. It points toward a contribution of itinerant electrons to the magnetism that is already in the parent compound of this family of Fe-based superconductors.

Superconductivity in Sm-doped CaFe2As2 single crystals

Science.gov (United States)

Dong-Yun, Chen; Bin-Bin, Ruan; Jia, Yu; Qi, Guo; Xiao-Chuan, Wang; Qing-Ge, Mu; Bo-Jin, Pan; Tong, Liu; Gen-Fu, Chen; Zhi-An, Ren

2016-06-01

In this article, the Sm-doping single crystals Ca1 - x Sm x Fe2As2 (x = 0 ˜ 0.2) were prepared by the CaAs flux method, and followed by a rapid quenching treatment after the high temperature growth. The samples were characterized by structural, resistive, and magnetic measurements. The successful Sm-substitution was revealed by the reduction of the lattice parameter c, due to the smaller ionic radius of Sm3+ than Ca2+. Superconductivity was observed in all samples with onset T c varying from 27 K to 44 K upon Sm-doping. The coexistence of a collapsed phase transition and the superconducting transition was found for the lower Sm-doping samples. Zero resistivity and substantial superconducting volume fraction only happen in higher Sm-doping crystals with the nominal x > 0.10. The doping dependences of the c-axis length and onset T c were summarized. The high-T c observed in these quenched crystals may be attributed to simultaneous tuning of electron carriers doping and strain effect caused by lattice reduction of Sm-substitution. Project supported by the National Natural Science Foundation of China (Grant No. 11474339), the National Basic Research Program of China (Grant Nos. 2010CB923000 and 2011CBA00100), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB07020100).

Determination of the hydrogen positions in the novel barium boroarsenate Ba[B{sub 2}As{sub 2}O{sub 8}(OH){sub 2}] by combined single crystal X-ray and powder neutron investigations

Energy Technology Data Exchange (ETDEWEB)

Lieb, Alexandra [School of Chemistry, University of Southampton (United Kingdom); Fakultaet fuer Verfahrens- und Systemtechnik, Lehrstuhl fuer Technische Chemie, Otto-von-Guericke-Universitaet, Magdeburg (Germany); Weller, Mark T. [School of Chemistry, University of Southampton (United Kingdom); Department of Chemistry, University of Bath (United Kingdom)

2017-11-17

The boroarsenate Ba[B{sub 2}As{sub 2}O{sub 8}(OH){sub 2}] was obtained by the reaction of NH{sub 4}H{sub 2}AsO{sub 4}, B(OH){sub 3} and BaBr{sub 2}.2H{sub 2}O in the melt. Ba[B{sub 2}As{sub 2}O{sub 8}(OH){sub 2}] was obtained as thin colorless needles, together with spherical crystals of BAsO{sub 4} as by-product, grown on a pellet of Ba[BAsO{sub 5}]. The products could be separated mechanically. For neutron scattering experiments a sample was prepared with {sup 11}B(OH){sub 3} as a starting material. The crystal structure of Ba[B{sub 2}As{sub 2}O{sub 8}(OH){sub 2}] was determined by single-crystal X-ray diffraction and exhibits a layer structure with an unprecedented layer topology. The exact positions of the hydrogen atoms were determined using combined single-crystal X-ray and powder neutron diffraction investigations. Ba[B{sub 2}As{sub 2}O{sub 8}(OH){sub 2}] was further characterized by IR spectroscopy and EDX analysis. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Perovskite single crystals and thin films for optoelectronic devices (Conference Presentation)

Science.gov (United States)

Li, Gang; Han, Qifeng; Yang, Yang; Bae, Sang-Hoon; Sun, Pengyu

2016-09-01

Hybrid organolead trihalide perovskite (OTP) solar cells have developed as a promising candidate in photovoltaics due to their excellent properties including a direct bandgap, strong absorption coefficient, long carrier lifetime, and high mobility. Most recently, formamidinium (NH2CH=NH2+ or FA) lead iodide (FAPbI3) has attracted significant attention due to several advantages: (1) the larger organic FA cation can replace the MA cation and form a more symmetric crystal structure, (2) the smaller bandgap of FAPbI3 allows for near infrared (NIR) absorption, and (3) FAPbI3 has an elevated decomposition temperature and thus potential to improve stability. Single crystals provide an excellent model system to study the intrinsic electrical and optical properties of these materials due to their high purity, which is particularly important to understand the limits of these materials. In this work, we report the growth of large ( 5 millimeter size) single crystal FAPbI3 using a novel liquid based crystallization method. The single crystal FAPbI3 demonstrated a δ-phase to α-phase transition with a color change from yellow to black when heated to 185°C within approximately two minutes. The crystal structures of the two phases were identified and the PL emission peak of the α-phase FAPbI3 (820 nm) shows clear red-shift compared to the FAPbI3 thin film (805 nm). The FAPbI3 single crystal shows a long carrier lifetime of 484 ns, a high carrier mobility of 4.4 cm2·V-1·s-1, and even more interestingly a conductivity of 1.1 × 10-7(ohm·cm)-1, which is approximately one order of magnitude higher than that of the MAPbI3 single crystal. Finally, high performance photoconductivity type photodetectors were successfully demonstrated using the single crystal FAPbI3.

Optical characterization of epitaxial single crystal CdTe thin films on Al{sub 2}O{sub 3} (0001) substrates

Energy Technology Data Exchange (ETDEWEB)

Jovanovic, S.M.; Devenyi, G.A., E-mail: devenyga@mcmaster.ca; Jarvis, V.M.; Meinander, K.; Haapamaki, C.M.; Kuyanov, P.; Gerber, M.; LaPierre, R.R.; Preston, J.S.

2014-11-03

The optoelectronic properties of single crystal CdTe thin films were investigated by photoluminescence spectroscopy, photoreflectance spectroscopy and variable angle spectroscopic ellipsometry. The room temperature bandgap was measured to be 1.51 eV and was consistent between spectroscopic measurements and previously reported values. Breadth of bandgap emission was consistent with high quality material. Low temperature photoluminescence spectra indicated a dominant emission consistent with bound excitons. Emissions corresponding to self-compensation defects, doping and contaminants were not found. Variable angle spectroscopic ellipsometry measurements over the near-UV to infrared range demonstrated sharp resonance peaks. All spectroscopic measurements indicate high quality thin film material of comparable or better quality than bulk CdTe. - Highlights: • High quality epitaxial CdTe thin films were grown. • Two dimensional X-ray diffraction characterization confirmed single crystal material. • Photoluminescence indicated low defect density when compared to bulk single crystals. • Optical characterization indicated the presence of room temperature excitons.

Hydrostatic pressure study of the structural phase transitions and superconductivity in single crystals of (Ba1-xKx)Fe2As2 (x=0 and 0.45) and CaFe2As2

International Nuclear Information System (INIS)

Torikachvili, M.S.; Bud'ko, S.L.; Ni Ni; Canfield, P.C.

2009-01-01

We studied the effect of hydrostatic pressure (P) on the structural phase transitions and superconductivity in the ternary and pseudo-ternary iron arsenides CaFe 2 As 2 , BaFe 2 As 2 , and (Ba 0.55 K 0.45 )Fe 2 As 2 , by means of measurements of electrical resistivity (ρ) in the 1.8-300 K temperature (T) range, pressures up to 20 kbar, and magnetic fields up to 9 T. CaFe 2 As 2 and BaFe 2 As 2 (lightly doped with Sn) display structural phase transitions near 170 and 85 K, respectively, and do not exhibit superconductivity in ambient pressure, while K-doped (Ba 0.55 K 0.45 )Fe 2 As 2 is superconducting for T 2 As 2 is to shift the onset of the crystallographic transformation down in temperature at the rate of ∼-1.04 K/kbar, while shifting the whole ρ(T) curves downward, whereas its effect on superconducting (Ba 0.55 K 0.45 )Fe 2 As 2 is to shift the onset of superconductivity to lower temperatures at the rate of ∼-0.21 K/kbar. The effect of pressure on CaFe 2 As 2 is first to suppress the crystallographic transformation and induce superconductivity with onset near 12 K very rapidly, i.e., for P c2 ) data in (Ba 0.55 K 0.45 )Fe 2 As 2 and CaFe 2 As 2 are discussed.

Growth of Ga2O3 single crystal

OpenAIRE

龍見, 雅美; 小池, 裕之; 市木, 伸明; Tatsumi, Masami; Koike, Hiroyuki; Ichiki, Nobuaki

2010-01-01

Single crystals of β-Ga2O3 for substrates of GaN LED were grown by Floating Zone(FZ) method. The transparent single crystals of 5-6 mm in diameter were reproducibly obtained by applying necking procedure and the preferential growth direction was . Many cracks were induced along the cleavage plane of (100) in slicing process, which is related to thermal stress and the growth direction. However, this preliminary growth experiments suggested that β-Ga2O3 single crystal is promising as a substrat...

Vortex-glass state in the isovalent optimally doped pnictide superconductor BaFe2(As0.68P0.32)2

Science.gov (United States)

Salem-Sugui, S., Jr.; Mosqueira, J.; Alvarenga, A. D.; Sóñora, D.; Crisan, A.; Ionescu, A. M.; Sundar, S.; Hu, D.; Li, S.-L.; Luo, H.-Q.

2017-05-01

We report on isochamp magneto-resistivity and ac susceptibility curves obtained in a high-quality single crystal of the isovalent optimally doped pnictide BaFe2(As{}0.68P{}0.32)2 with superconducting temperature T c = 27.8 K for H∥c-axis. Plots of the logarithmic derivative of the resistivity curves allowed the identification of a vortex-glass (VG) phase and to obtain the values of the critical glass temperature T g, the temperature T * marking the transition to the liquid phase and of the critical exponent s. The presence of the VG phase is confirmed by detailed measurements of the third harmonic signal of the ac magnetic susceptibility. The modified VG model was successfully applied to the data allowing the obtention of the temperature independent VG activation energy U b . The activation energy U 0 obtained from the Arrhenius plots in the flux-flow region are compared with U b and with U 0 obtained from flux-creep measurements on a M(H) isothermal in the same sample. A phase diagram of the studied sample is constructed showing the T g glass line, the T * line representing a transition (melting) to the liquid phase, the mean field temperature T c(H) line and the H p line obtained from the peaks in isothermal critical current, J c(H) curves, which are explained in terms of a softening of the vortex lattice. The glass line was fitted by a theory presented in the literature which considers the effect of disorder.

Quantum criticality in electron-doped BaFe2-xNixAs2.

Science.gov (United States)

Zhou, R; Li, Z; Yang, J; Sun, D L; Lin, C T; Zheng, Guo-qing

2013-01-01

A quantum critical point is a point in a system's phase diagram at which an order is completely suppressed at absolute zero temperature (T). The presence of a quantum critical point manifests itself in the finite-T physical properties, and often gives rise to new states of matter. Superconductivity in the cuprates and in heavy fermion materials is believed by many to be mediated by fluctuations associated with a quantum critical point. In the recently discovered iron-pnictide superconductors, we report transport and NMR measurements on BaFe(2-x)Ni(x)As₂ (0≤x≤0.17). We find two critical points at x(c1)=0.10 and x(c2)=0.14. The electrical resistivity follows ρ=ρ₀+AT(n), with n=1 around x(c1) and another minimal n=1.1 at x(c2). By NMR measurements, we identity x(c1) to be a magnetic quantum critical point and suggest that x(c2) is a new type of quantum critical point associated with a nematic structural phase transition. Our results suggest that the superconductivity in carrier-doped pnictides is closely linked to the quantum criticality.

One-step synthesis of single phase micro-sized BaFe12O19 hexaplates via a modified hydrothermal approach

International Nuclear Information System (INIS)

Cao, Liangliang; Zeng, Yanwei; Ding, Chuan; Li, Rongjie; Li, Chuanming; Zhang, Chengzhe

2016-01-01

Single phase BaFe 12 O 19 ferrite identified by X-ray diffraction and Raman spectroscopy has been successfully synthesized using Fe(NO 3 ) 3 ·9H 2 O and Ba(NO 3 ) 2 as starting materials and NaOH as a precipitant via a modified one-step hydrothermal approach which involves the elimination of carbonate radicals from reaction system based on the stoichiometric ratio of [Ba 2+ ]/[Fe 3+ ]. Hydrothermal products under various synthetic conditions were studied, including different addition amounts of Ba(NO 3 ) 2 in the modified operation, reaction temperatures and times, and hydroxyl concentrations. The BaFe 12 O 19 particles featuring an excellent hexagonal plates shape can be hydrothermally synthesized with the aid of polyethylene glycol. It has been found that the presence of α-Fe 2 O 3 in a traditional hydrothermal process is motivated by the deviation from the desired [Ba 2+ ]/[Fe 3+ ] ratio caused by the negligent precipitation of Ba 2+ ions to BaCO 3 . An investigation on the preferred hydrothermal product through thermodynamic calculation shows that the reduction in Gibbs free energy for the exclusive formation of BaFe 12 O 19 with 1 mol of Fe 3+ ions at 220 °C is approximately 32 kJ higher than that for the complete transformation to α-Fe 2 O 3 with an equal consumption quantity of Fe 3+ ions. - Highlights: • Pure BaFe 12 O 19 was hydrothermally synthesized based on the stoichiometric ratio. • A modified operation was employed to eliminate self-invited carbonate ions. • BaFe 12 O 19 particles feature an excellent micro-sized hexaplates shape. • BaFe 12 O 19 was thermodynamically confirmed to be preferred result instead of α-Fe 2 O 3 .

Gigantic uniaxial pressure effect in single crystals of iron-based superconductors

International Nuclear Information System (INIS)

Nakashima, Y.; Yui, H.; Sasagawa, T.

2010-01-01

In order to elucidate the anisotropic pressure effect on superconductivity in an iron-based superconductor, magnetization measurements have been performed in Ba(Fe 0.92 Co 0.08 ) 2 As 2 single crystals under uniaxial pressures applied along the c-axis. Gigantic T c suppression, dT c /dP //c = -15 K/GPa, was observed when the anisotropic deformation with the a-expansion and c-compression was induced by the c-pressure, which should be compared with dT c /dP c .

High field properties of superconducting BaFe{sub 2-x}Ni{sub x}As{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Richter, Stefan [Institute for Metallic Materials, IFW Dresden (Germany); Technical University Dresden (Germany); Kurth, Fritz; Grinenko, Vadim; Nielsch, Kornelius; Huehne, Ruben [Institute for Metallic Materials, IFW Dresden (Germany); Iida, Kazumasa [Nagoya University (Japan); Pervakov, Kirill [Russian Academy of Sciences (Russian Federation); Tarantini, Chiara; Jaroszynski, Jan [National High Magnetic Field Laboratory (United States); Pukenas, Aurimas; Skrotzki, Werner [Technical University Dresden (Germany)

2016-07-01

Fe based superconductors combine the advantages of cuprates (high upper critical field) with the small Hc{sub 2} anisotropy of classic low temperature superconductors, which makes them suitable candidates for high field applications. The study of Fe-based superconducting thin films is one crucial step to explore this potential in more detail. We present results for epitaxial BaFe{sub 2-x}Ni{sub x}As{sub 2} thin films, which have been successfully grown for the first time using pulsed laser deposition. Superconducting transition temperatures of up to 19 K have been realized in slightly overdoped films, which is in good agreement with results obtained for single crystals. The behavior of the upper critical field and critical current density has been measured in high magnetic fields up to 35 T. The results will be correlated to the observed microstructure and compared to high field data for single crystals with similar composition.

Crystal growth and scintillation properties of Pr-doped SrI2 single crystals

Science.gov (United States)

Yokota, Yuui; Ito, Tomoki; Yoshino, Masao; Yamaji, Akihiro; Ohashi, Yuji; Kurosawa, Shunsuke; Kamada, Kei; Yoshikawa, Akira

2018-04-01

Pr-doped SrI2 (Pr:SrI2) single crystals with various Pr concentrations were grown by the halide-micro-pulling-down (H-μ-PD) method, and the scintillation properties were investigated. Pr1%:SrI2 single crystal with high transparency could be grown by the H-μ-PD method while Pr2, 3 and 5%:SrI2 single crystals included some cracks and opaque parts. In the photoluminescence spectrum of the Pr1%:SrI2 single crystal, an emission peak originated from the Pr3+ ion was observed around 435 nm while the radioluminescence spectra showed an emission peak around 535 nm for the undoped SrI2 and Pr:SrI2 single crystals. Light yields of Pr1, 2, 3 and 5%:SrI2 single crystals under γ-ray irradiation were 7700, 8700, 7200 and 6700 photons/MeV, respectively. Decay times of Pr1 and 2%:SrI2 single crystals under γ-ray irradiation were 55.9 and 35.0 ns of the fast decay component, and 435 and 408 ns of the slow decay component, respectively.

Precipitation of thin-film organic single crystals by a novel crystal growth method using electrospray and ionic liquid film

Science.gov (United States)

Ueda, Hiroyuki; Takeuchi, Keita; Kikuchi, Akihiko

2018-04-01

We report an organic single crystal growth technique, which uses a nonvolatile liquid thin film as a crystal growth field and supplies fine droplets containing solute from the surface of the liquid thin film uniformly and continuously by electrospray deposition. Here, we investigated the relationships between the solute concentration of the supplied solution and the morphology and size of precipitated crystals for four types of fluorescent organic low molecule material [tris(8-hydroxyquinoline)aluminum (Alq3), 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), N,N‧-bis(3-methylphenyl)-N,N‧-diphenylbenzidine (TPD), and N,N-bis(naphthalene-1-yl)-N,N-diphenyl-benzidine (NPB)] using an ionic liquid as the nonvolatile liquid. As the concentration of the supplied solution decreased, the morphology of precipitated crystals changed from dendritic or leaf shape to platelike one. At the solution concentration of 0.1 mg/ml, relatively large platelike single crystals with a diagonal length of over 100 µm were obtained for all types of material. In the experiment using ionic liquid and dioctyl sebacate as nonvolatile liquids, it was confirmed that there is a clear positive correlation between the maximum volume of the precipitated single crystal and the solubility of solute under the same solution supply conditions.

Highly polarized single-c-domain single-crystal Pb(Mn,Nb)O(3)-PZT thin films.

Science.gov (United States)

Wasa, Kiyotaka; Adachi, Hideaki; Nishida, Ken; Yamamoto, Takashi; Matsushima, Tomoaki; Kanno, Isaku; Kotera, Hidetoshi

2012-01-01

In-plane unstrained single-c-domain/single-crystal thin films of PZT-based ternary ferroelectric perovskite, ξPb(Mn,Nb)O3-(1 - ξ)PZT, were grown on SrRuO(3)/Pt/MgO substrates using magnetron sputtering followed by quenching. The sputtered unstrained thin films exhibit unique ferroelectric properties: high coercive field, Ec > 180 kV/cm, large remanent polarization, P(r) = 100 μC/cm(2), small relative dielectric constants, ε* = 100 to 150, high Curie temperature, Tc = ~600 °C, and bulk-like large transverse piezoelectric constants, e31,f = -12.0 C/m(2) for PZT(48/52) at ξ = 0.06. The unstrained thin films are an ideal structure to extract the bulk ferroelectric properties. Their micro-structures and ferroelectric properties are discussed in relation to the potential applications for piezoelectric MEMS. © 2012 IEEE

Coupling of carbon monoxide molecules over oxygen-defected UO2(111) single crystal and thin film surfaces.

Science.gov (United States)

Senanayake, S D; Waterhouse, G I N; Idriss, H; Madey, Theodore E

2005-11-22

While coupling reactions of carbon-containing compounds are numerous in organometallic chemistry, they are very rare on well-defined solid surfaces. In this work we show that the reductive coupling of two molecules of carbon monoxide to C2 compounds (acetylene and ethylene) could be achieved on oxygen-defected UO2(111) single crystal and thin film surfaces. This result allows in situ electron spectroscopic investigation of a typical organometallic reaction such as carbon coupling and extends it to heterogeneous catalysis and solids. By using high-resolution photoelectron spectroscopy (HRXPS) it was possible to track the changes in surface states of the U and O atoms as well as identify the intermediate of the reaction. Upon CO adsorption U cations in low oxidation states are oxidized to U4+ ions; this was accompanied by an increase of the O-to-U surface ratios. The HRXPS C 1s lines show the presence of adsorbed species assigned to diolate species (-OCH=CHO-) that are most likely the reaction intermediate in the coupling of two CO molecules to acetylene and ethylene.

Coupling of Carbon Monoxide Molecules over Oxygen Defected UO2 (111) Single Crystal and Thin Film Surfaces

International Nuclear Information System (INIS)

Senanayake, S.; Waterhouse, G.; Idriss, H.; Madey, T.

2005-01-01

While coupling reactions of carbon-containing compounds are numerous in organometallic chemistry, they are very rare on well-defined solid surfaces. In this work we show that the reductive coupling of two molecules of carbon monoxide to C 2 compounds (acetylene and ethylene) could be achieved on oxygen-defected UO 2 (111) single crystal and thin film surfaces. This result allows in situ electron spectroscopic investigation of a typical organometallic reaction such as carbon coupling and extends it to heterogeneous catalysis and solids. By using high-resolution photoelectron spectroscopy (HRXPS) it was possible to track the changes in surface states of the U and O atoms as well as identify the intermediate of the reaction. Upon CO adsorption U cations in low oxidation states are oxidized to U 4+ ions; this was accompanied by an increase of the O-to-U surface ratios. The HRXPS C 1s lines show the presence of adsorbed species assigned to diolate species (-OCH=CHO-) that are most likely the reaction intermediate in the coupling of two CO molecules to acetylene and ethylene

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

Science.gov (United States)

Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

2014-08-29

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

Quasiparticle mass enhancement close to the quantum critical point in BaFe2(As(1-x)P(x))2.

Science.gov (United States)

Walmsley, P; Putzke, C; Malone, L; Guillamón, I; Vignolles, D; Proust, C; Badoux, S; Coldea, A I; Watson, M D; Kasahara, S; Mizukami, Y; Shibauchi, T; Matsuda, Y; Carrington, A

2013-06-21

We report a combined study of the specific heat and de Haas-van Alphen effect in the iron-pnictide superconductor BaFe2(As(1-x)P(x))2. Our data when combined with results for the magnetic penetration depth give compelling evidence for the existence of a quantum critical point close to x=0.30 which affects the majority of the Fermi surface by enhancing the quasiparticle mass. The results show that the sharp peak in the inverse superfluid density seen in this system results from a strong increase in the quasiparticle mass at the quantum critical point.

Growth of methyl 2-(2,4-dinitrophenyl)aminopropanoate single crystals

Science.gov (United States)

Perigaud, A.; Nicolau, Y. F.

1986-12-01

Methyl 2-(2,4-dinitrophenyl)aminopropanoate single crystals, 1 cm in diameter and 7 cm in length have been grown by a travelling-heater-Bridgman method in polyethylene tubes introduced into glass ampoules, at a growth rate of 1.5-6 mm/day. The starting material was synthesised and purified by recrystallization from methanol and by vacuum evaporation to a purity of 99.994%. The period of growth, and hence the length of the crystal, is limited due to melt decomposition and polycondensation. The b-axis of the crystals is always oriented at about 72° to the ampoule axis. Good quality single crystals have been obtained giving a FWHM of the Cu Kα (040) rocking curve of about 1'.

Effect of the Ultrasonic Substrate Vibration on Nucleation and Crystallization of PbI2 Crystals and Thin Films

Directory of Open Access Journals (Sweden)

Fatemeh Zabihi

2018-01-01

Full Text Available Preparation of defect-free and well-controlled solution-processed crystalline thin films is highly desirable for emerging technologies, such as perovskite solar cells. In this work, using PbI2 as a model solution with a vast variety of applications, we demonstrate that the excitation of a liquid thin film by imposed ultrasonic vibration on the film substrate significantly affects the nucleation and crystallization kinetics of PbI2 and the morphology of the resulting solid thin film. It is found that by applying ultrasonic vibration to PbI2 solution spun onto an ITO substrate with a moderate power and excitation duration (5 W and 1 min for the 40 kHz transducer used in this study, the nucleation rate increases and the crystals transform from 2D or planar to epitaxial 3D columnar structures, resulting in the suppression of crystallization dewetting. The effects of various induced physical phenomena as a result of the excitation by ultrasonic vibration are discussed, including microstreaming and micromixing, increased heat transfer and local temperature, a change in the thermodynamic state of the solution, and a decrease in the supersaturation point. It is shown that the ultrasonic-assisted solution deposition of the PbI2 thin films is controllable and reproducible, a process which is low-cost and in line with the large-scale fabrication of such solution-processed thin films.

Pressure dependence of effective Coulomb interaction parameters in BaFe2As2 by first-principle calculation

Science.gov (United States)

Aghajani, M.; Hadipour, H.; Akhavan, M.

2018-05-01

Pressure dependence of the onsite Coulomb interactions of the BaFe2As2 has been studied by employing the constrained random phase approximation within first-principle calculations. Analyzing total and projected density of states, a pseudogap is found for dxy band at the energy roughly 0.25 eV higher than the Fermi level. Also, by applying pressure the spectral weight of the dxy orbital vanishes while other orbitals remain metallic. The different screening channels, as discussed in four different models, affect significantly on the Hubbard U while the Hund J remains almost unchanged. The average onsite bare and partially and fully screened Coulomb interactions increase with different rates upon compression. These different rates can be explained by competition between the electronic screening and reduction of bond lengths.

Magnetization of correlated electron systems. MnSi thin films, CrB2 single crystals and two-dimensional electron systems in MgZnO/ZnO

International Nuclear Information System (INIS)

Brasse, Matthias

2014-01-01

Torque magnetometry at low temperature is performed to investigate the magnetic properties of MnSi thin films, of a CrB 2 single crystal and of a two-dimensional electron system (2DESs) formed at the interface of MgZnO/ZnO. The magnetic anisotropy and phase diagram of MnSi as well as information on the electronic structure of CrB 2 are obtained. The MgZnO/ZnO 2DESs exhibits the de Haas-van Alphen effect and non-equilibrium currents which are analyzed in order to determine ground state properties and excited states, respectively.

Growth and surface topography of WSe_2 single crystal

International Nuclear Information System (INIS)

Dixit, Vijay; Vyas, Chirag; Pataniya, Pratik; Jani, Mihir; Pathak, Vishal; Patel, Abhishek; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

2016-01-01

Tungsten Di-Selenide belongs to the family of TMDCs showing their potential applications in the fields of Optoelectronics and PEC solar cells. Here in the present investigation single crystals of WSe_2 were grown by Direct Vapour Transport Technique in a dual zone furnace having temperature difference of 50 K between the two zones. These single crystals were characterized by EDAX which confirms the stiochiometry of the grown crystals. Surface topography of the crystal was studied by optical micrograph showing the left handed spirals on the surface of WSe_2 crystals. Single crystalline nature of the crystals was confirmed by SAED.

Epitaxial single-crystal thin films of MnxTi1-xO2-δ grown on (rutile)TiO2 substrates with pulsed laser deposition: Experiment and theory

Energy Technology Data Exchange (ETDEWEB)

Ilton, Eugene S.; Droubay, Timothy C.; Chaka, Anne M.; Kovarik, Libor; Varga, Tamas; Arey, Bruce W.; Kerisit, Sebastien N.

2015-02-01

Epitaxial rutile-structured single-crystal MnxTi1-xO2-δ films were synthesized on rutile- (110) and -(001) substrates using pulsed laser deposition. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and aberration-corrected transmission electron microscopy (ACTEM). Under the present conditions, 400oC and PO2 = 20 mTorr, single crystal epitaxial thin films were grown for x = 0.13, where x is the nominal average mole fraction of Mn. In fact, arbitrarily thick films could be grown with near invariant Mn/Ti concentration profiles from the substrate/film interface to the film surface. In contrast, at x = 0.25, Mn became enriched towards the surface and a secondary nano-scale phase formed which appeared to maintain the basic rutile structure but with enhanced z-contrast in the tunnels, or tetrahedral interstitial sites. Ab initio thermodynamic calculations provided quantitative estimates for the destabilizing effect of expanding the β-MnO2 lattice parameters to those of TiO2-rutile, the stabilizing effect of diluting Mn with increasing Ti concentration, and competing reaction pathways.

Optimization of the crystal growth of the superconductor CaKFe4As4 from solution in the FeAs -CaFe2As2-KFe2As2 system

Science.gov (United States)

Meier, W. R.; Kong, T.; Bud'ko, S. L.; Canfield, P. C.

2017-06-01

Measurements of the anisotropic properties of single crystals play a crucial role in probing the physics of new materials. Determining a growth protocol that yields suitable high-quality single crystals can be particularly challenging for multicomponent compounds. Here we present a case study of how we refined a procedure to grow single crystals of CaKFe4As4 from a high temperature, quaternary liquid solution rich in iron and arsenic ("FeAs self-flux"). Temperature dependent resistance and magnetization measurements are emphasized, in addition to the x-ray diffraction, to detect intergrown CaKFe4As4 , CaFe2As2 , and KFe2As2 within what appear to be single crystals. Guided by the rules of phase equilibria and these data, we adjusted growth parameters to suppress formation of the impurity phases. The resulting optimized procedure yielded phase-pure single crystals of CaKFe4As4 . This optimization process offers insight into the growth of quaternary compounds and a glimpse of the four-component phase diagram in the pseudoternary FeAs -CaFe2As2-KFe2As2 system.

Inkjet printing of single-crystal films.

Science.gov (United States)

Minemawari, Hiromi; Yamada, Toshikazu; Matsui, Hiroyuki; Tsutsumi, Jun'ya; Haas, Simon; Chiba, Ryosuke; Kumai, Reiji; Hasegawa, Tatsuo

2011-07-13

The use of single crystals has been fundamental to the development of semiconductor microelectronics and solid-state science. Whether based on inorganic or organic materials, the devices that show the highest performance rely on single-crystal interfaces, with their nearly perfect translational symmetry and exceptionally high chemical purity. Attention has recently been focused on developing simple ways of producing electronic devices by means of printing technologies. 'Printed electronics' is being explored for the manufacture of large-area and flexible electronic devices by the patterned application of functional inks containing soluble or dispersed semiconducting materials. However, because of the strong self-organizing tendency of the deposited materials, the production of semiconducting thin films of high crystallinity (indispensable for realizing high carrier mobility) may be incompatible with conventional printing processes. Here we develop a method that combines the technique of antisolvent crystallization with inkjet printing to produce organic semiconducting thin films of high crystallinity. Specifically, we show that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid-air interfaces. Using this approach, we have printed single crystals of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C(8)-BTBT) (ref. 15), yielding thin-film transistors with average carrier mobilities as high as 16.4 cm(2) V(-1) s(-1). This printing technique constitutes a major step towards the use of high-performance single-crystal semiconductor devices for large-area and flexible electronics applications.

Growth and microtopographic study of CuInSe{sub 2} single crystals

Energy Technology Data Exchange (ETDEWEB)

Chauhan, Sanjaysinh M.; Chaki, Sunil, E-mail: sunilchaki@yahoo.co.in; Deshpande, M. P. [Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Gujarat - 388120 (India); Tailor, J. P. [Applied Physics Department, S.V.N.I.T., Surat, Gujarat - 395007 (India)

2016-05-23

The CuInSe{sub 2} single crystals were grown by chemical vapour transport (CVT) technique using iodine as transporting agent. The elemental composition of the as-grown CuInSe{sub 2} single crystals was determined by energy dispersive analysis of X-ray (EDAX). The unit cell crystal structure and lattice parameters were determined by X-ray diffraction (XRD) technique. The surface microtopographic study of the as-grown CuInSe{sub 2} single crystals surfaces were done to study the defects, growth mechanism, etc. of the CVT grown crystals.

High pressure effect on MoS2 and MoSe2 single crystals grown by ...

Indian Academy of Sciences (India)

Unknown

tetrahedral anvil apparatus up to 5 GPa. In this paper we report room temperature resistance mea- surements as a function of pressure on MoS2 and MoSe2 single crystals. In each case the resistance decreases un- der pressure due to an increase in the carrier concentration. 2. Experimental. Single crystals of MoS2 and ...

Epitaxial growth of thin single-crystals and their quality study by Rutherford scattering in channeling conditions

International Nuclear Information System (INIS)

Kirsch, Robert.

1975-01-01

Some aspects of thin crystalline layers are reminded: vacuum deposition, epitaxial growth, annealing and interdiffusion ion channeling and scattering of 1-2MeV helium ions are used to study the crystalline quality, the annealing effects and in some cases the interdiffusion in epitaxial multilayers of silver, copper gold and nickel. Thin single-crystals of gold and nickel oriented (III) plan parallel to the surface were obtained by successive epitaxial growth from muscovite mica clivages. The mounting techniques of single crystalline, self-supporting, 300 to 1200 Angstroems thick, gold and nickel targets of 3mm diameter are described. The gold single-crystals have dislocation densities of 10 8 cm -2 and the various epitaxial layers are obtained without twinning [fr

First order magnetic transition in single crystal CaFe2As2 detected by 75As NMR

Energy Technology Data Exchange (ETDEWEB)

Baek, Seung Ho [Los Alamos National Laboratory; Curro, Nicholas J [UC - DAVIS

2008-01-01

We report {sup 75}As Nuclear Magnetic Resonance data in a single crystal of CaFe{sub 2}As{sub 2}. The Knight shift, the electric field gradient, and the spin lattice relaxation rate are strongly temperature dependent in the paramagnetic state, and change discontinuously at the structural transition temperature, T{sub S} = T{sub N} = 167 K. Immediately below, the NMR spectra reveal an internal field at the As site associated with the presence of a commensurate magnetic order. These results indicate that the structural and magnetic transitions in CaFe{sub 2}As{sub 2} are first order and strongly coupled, and that the electron density in the FeAs plane is highly sensitive to the out-of-plane structure.

Growth, structural and magnetic characterization of Al-substituted barium hexaferrite single crystals

International Nuclear Information System (INIS)

Vinnik, D.A.; Zherebtsov, D.A.; Mashkovtseva, L.S.; Nemrava, S.; Bischoff, M.; Perov, N.S.; Semisalova, A.S.; Krivtsov, I.V.; Isaenko, L.I.; Mikhailov, G.G.; Niewa, R.

2014-01-01

Highlights: • Growth of large Al-substituted crystals BaFe 12−x Al x O 19. • Al-content controllable by flux composition. • Crystallographic site preference of Al unraveled. • Magnetic characterization depending on Al-content. - Abstract: Large single crystals of aluminum-substituted M-type barium hexaferrite BaFe 12−x Al x O 19 were obtained from carbonate flux. The Al content in the crystals can be controlled via the Al content of the flux up to x = 1.1 according to single crystal X-ray structure refinements. Al shows a distinct preference to substitute Fe on crystallographic sites with high coordination numbers by oxygen atoms, whereas no significant amounts of Al can be found on a tetrahedrally coordinated site. An increasing amount of the aluminum dopant results in a monotonous reduction of the Curie temperature from 440 to 415 °C and the saturation magnetization at room temperature from 68 to 57 emu/g for single crystal and from 61 to 53 emu/g for powder samples

Growth of high quality Bi2Sr2CaCu2Oy single crystals by the modified vertical Bridgman method

International Nuclear Information System (INIS)

Nagashima, O.; Tanaka, H.; Echizen, Y.; Kishida, S.

2004-01-01

We grew Bi 2 Sr 2 CaCu 2 O y (Bi-2212) single crystals by the modified vertical Bridgman (VB) method, and investigated their characteristics in order to clarify the optimum growth conditions for obtaining high-quality Bi-2212 single crystals. The Bi-2212 single crystals were grown changing pulling rates or using starting materials after pre-treatments. We found that the superconducting critical temperature (T c ) of the single crystal prepared at a slow growth rate of 0.25 mm/h was about 88 K and that the single crystals were a Bi-2212 single phase. Moreover, the single crystals grown using the starting materials pre-treated in Ar and O 2 atmospheres, had the T c of about 88 and 86 K, respectively. In addition, both of single crystals were Bi-2212 single phase

Superconductivity in SrNi2P2 single crystals

Energy Technology Data Exchange (ETDEWEB)

Ronning, Filip [Los Alamos National Laboratory; Bauer, Eric D [Los Alamos National Laboratory; Park, Tuscon [Los Alamos National Laboratory; Thompson, Joe D [Los Alamos National Laboratory

2009-01-01

Heat capacity, magnetic susceptibility, and resistivity of SrNi{sub 2}P{sub 2} single crystals are presented, illustrating the structural transition at 325 K, and bulk superconductivity at 1.4 K. The magnitude of {Tc}, fits to the heat capacity data, the small upper critical field H{sub c2} = 390 Oe, and {kappa} = 2.1 suggests a conventional fully gapped superconductor. With applied pressure we find that superconductivity persists into the so-called 'collapsed tetragonal' phase, although the transition temperature is monotonically suppressed with increasing pressure. This argues that reduced dimensionality can be a mechanism for increasing the transition temperatures of layered NiP, as well as layered FeAs and NiAs, superconductors.

Hydrostatic pressure (8 GPa) dependence of electrical resistivity of BaCo{sub 2}As{sub 2} single crystal

Energy Technology Data Exchange (ETDEWEB)

Ganguli, Chandreyee; Matsubayashi, Kazuyuki; Ohgushi, Kenya [Institute for Solid State Physics, The University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Uwatoko, Yoshiya, E-mail: uwatoko@issp.u-tokyo.ac.jp [Institute for Solid State Physics, The University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Kanagaraj, Moorthi [Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirappalli 620024 (India); Arumugam, Sonachalam, E-mail: sarumugam1963@yahoo.com [Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirappalli 620024 (India)

2013-10-15

Graphical abstract: - Highlights: • Single crystals of BaCo{sub 2}As{sub 2} were grown by CoAs self-flux method. • We have studied pressure effects (8 GPa) on dc electrical resistivity of BaCo{sub 2}As{sub 2}. • On applied external pressure BaCo{sub 2}As{sub 2} remains a metallic state up to 8 GPa. • Superconductivity is absent in BaCo{sub 2}As{sub 2} because of its proximity to ferromagnetism. - Abstract: The pressure dependence of the electrical resistivity of BaCo{sub 2}As{sub 2} single crystal as a function of temperature was measured at ambient and high pressures up to 8 GPa for the first time using cubic anvil high pressure cell. It is observed that at room temperature the resistivity monotonically decreases with increasing pressure and it remains in the metallic state even at an applied pressure of 8 GPa. From the temperature dependence of the resistivity measurements under pressure, we found that superconductivity is absent up to 8 GPa. The value of the electron's scattering factor (A) is found to be large at ambient pressure and it decreases with the application of pressure, indicating that the substantial electron correlation effect of BaCo{sub 2}As{sub 2} is reduced under pressure, revealing a dramatic change of density of states at the Fermi energy.

Growth and properties of oxygen doped Bi2Sr2CaCu2O8+δ single crystals

International Nuclear Information System (INIS)

Kapitulnik, A.; Mitzi, D.B.

1990-01-01

This paper reports results on oxygen doped single crystals in the Bi 2 Sr 2 CaCu 2 O 8+δ system grown by a directional solidification method. Annealing of as made crystals in increasing partial pressure of oxygen reversibly depresses the superconducting transition temperature from 90K (as made) to 77K (oxygen pressure annealed). Magnetic and photoemission properties of these crystals will be discussed

Morphology of growth of Bi2Sr2CaCu2O8 single crystals

Science.gov (United States)

Indenbom, M. V.; van der Beek, C. J.; Berseth, V.; Wolf, Th.; Berger, H.; Benoit, W.

1996-12-01

A good correlation of twins on the basal surface of flux-grown Bi2Sr2CaCu2Ox (BSCCO) single crystals with surface. growth steps is observed, the b-axis being perpendicular to the steps and, thus, parallel to the growth direction. It is found that mono-twin BSCCO single crystals produced by the travelling solvent floating zone method also grow preferentially along b, i.e. nearly perpendicularly to the boule axis, contrary to the common belief. This new understanding of the morphology of growth explains the nature of major defects in these crystals, which considerably change their measured superconducting properties, in a different way.

Crystal growth and mechanical hardness of In{sub 2}Se{sub 2.7}Sb{sub 0.3} single crystal

Energy Technology Data Exchange (ETDEWEB)

Patel, Piyush, E-mail: piyush-patel130@yahoo.com; Vyas, S. M., E-mail: s-m-vyas-gu@hotmail.com; Patel, Vimal; Pavagadhi, Himanshu [Department of Physics, School of Science, Gujarat University, Ahmedabad, Gujarat, India-380009 (India); Solanki, Mitesh [panditdindayal Petroleum University, Gandhinagar. Gujarat (India); Jani, Maunik P. [BITS Edu Campus, Varnama, Vadodara, Gujarat (India)

2015-08-28

The III-VI compound semiconductors is important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell and ionic batteries. In this paper, In{sub 2}Se{sub 2.7} Sb{sub 0.3} single crystals were grown by the Bridgman method with temperature gradient of 60 °C/cm and the growth velocity 0.5cm/hr. The as-grown crystals were examined under the optical microscope for surface study, a various growth features observed on top free surface of the single crystal which is predominant of layers growth mechanism. The lattice parameters of as-grown crystal was determined by the XRD analysis. A Vickers’ projection microscope were used for the study of microhardness on the as-cleaved, cold-worked and annealed samples of the crystals, the results were discussed, and reported in detail.

Crystal growth and optical properties of Sm:CaNb2O6 single crystal

International Nuclear Information System (INIS)

Di Juqing; Xu Xiaodong; Xia Changtai; Zeng Huidan; Cheng Yan; Li Dongzhen; Zhou Dahua; Wu Feng; Cheng Jimeng; Xu Jun

2012-01-01

Highlights: ► Sm:CaNb 2 O 6 single crystal was grown by the Czochralski method. ► Thermal expansion coefficients and J–O parameters were calculated. ► We found that this crystal had high quantum efficiency of 97%. - Abstract: Sm:CaNb 2 O 6 single crystal has been grown by the Czochralski method. Its high-temperature X-ray powder diffraction, optical absorption, emission spectroscopic as well as lifetime have been studied. Thermal expansion coefficients (α), J–O parameters (Ω i ), radiative lifetime (τ rad ), branching ratios (β) and stimulated emission cross-sections (σ e ) were calculated. The quantum efficiency (η) was calculated to be 97%. The intense peak emission cross section at 610, 658 nm were calculated to be 2.40 × 10 −21 , 2.42 × 10 −21 cm 2 . These results indicate that Sm:CaNb 2 O 6 crystal has potential use in visible laser and photonic devices area.

High pressure studies of as grown WX2-x single crystals

International Nuclear Information System (INIS)

Solanki, G.K.; Agarwal, M.K.; Patel, Yogesh A.

2011-01-01

The structural optical and transport properties of tungsten metal dichalogenides having layered structure have been extensively studied in the last two decades. These materials shows highly anisotropic behaviour and have been receiving considerable interest for a variety of applications. Several of these layered semiconductors have attracted attention as a new class of solar cell material. We present here the results of simultaneous resistivity and thermoelectric power (TEP) measurements upto 7 GPa on single crystals of WS 2 , WS 1.9 , WSe 2 and WSe 1.9 grown using Direct Vapour Transport (DVT) technique. The observations clearly shows WS 2 and WS 1.9 are more resistive compared to other two crystals. In all samples an exponential fall of resistivity on increases in pressure upto 2.1 GPa but after 2.2 GPa the resistivity decreases substantially with increases pressure. The TEP of WSe 2 increases steadily and reaches maximum at 0.65 GPa, while for WSe 1.9 TEP increases upto pressure 0.5 GPa. In both the cases after attaining the maximum TEP, then decreases monotonically with increase in pressure. TEP of WS 2 and WS 1.9 increase upto pressure 1.1 GPa, beyond 1.1 GPa pressure in both the cases TEP decreases steadily with further increase in pressure. In all the samples, the sign of TEP is positive indicating that all of them are p-type and remain p-type with increase in pressure. The variation of thermoelectric power factor with pressure has been thoroughly studied. An analysis of the data point out that perfectly stoichiometric crystals of WSe 2 work as superior thermoelectric materials. The results have been presented and implications have been discussed. (author)

Synthesis and single-crystal structure of the pseudo-ternary compounds LiA[N(CN){sub 2}]{sub 2} (A = K or Rb)

Energy Technology Data Exchange (ETDEWEB)

Reckeweg, Olaf; DiSalvo, Francis J. [Cornell Univ., Ithaca, NY (United States). Baker Lab.

2016-04-01

Crystals of LiA[N(CN){sub 2}]{sub 2} were obtained from the reaction of LiCl and ACl (A = K or Rb) with Ag[N(CN){sub 2}] in water and subsequent evaporation of the filtered solution at 80 C under normal atmospheric conditions. Crystals of the title compound form thin rectangular plates that are transparent, colorless, and very fragile. Single-crystal structure analyses have shown that both compounds are isotypic and adopt the tetragonal space group I4/mcm (no. 140, Z = 4) with the cell parameters a = 701.53(12) and c = 1413.7(5) pm for LiK[N(CN){sub 2}]{sub 2} and a = 730.34(10) and c = 1414.4(4) pm for LiRb[N(CN){sub 2}]{sub 2}. The crystal structure is described and compared to that of the pseudo-binary alkali metal dicyanamides.

X-ray beam monitor made by thin-film CVD single-crystal diamond.

Science.gov (United States)

Marinelli, Marco; Milani, E; Prestopino, G; Verona, C; Verona-Rinati, G; Angelone, M; Pillon, M; Kachkanov, V; Tartoni, N; Benetti, M; Cannatà, D; Di Pietrantonio, F

2012-11-01

A novel beam position monitor, operated at zero bias voltage, based on high-quality chemical-vapor-deposition single-crystal Schottky diamond for use under intense synchrotron X-ray beams was fabricated and tested. The total thickness of the diamond thin-film beam monitor is about 60 µm. The diamond beam monitor was inserted in the B16 beamline of the Diamond Light Source synchrotron in Harwell (UK). The device was characterized under monochromatic high-flux X-ray beams from 6 to 20 keV and a micro-focused 10 keV beam with a spot size of approximately 2 µm × 3 µm square. Time response, linearity and position sensitivity were investigated. Device response uniformity was measured by a raster scan of the diamond surface with the micro-focused beam. Transmissivity and spectral responsivity versus beam energy were also measured, showing excellent performance of the new thin-film single-crystal diamond beam monitor.

A Semimetal Model of the Normal State Susceptibility and Transport Properties of Ba(Fe1-xCox)2As2 Superconductors

Science.gov (United States)

Sales, Brian; Sefat, Athena; McGuire, Michael; Mandrus, David

2010-03-01

A simple two-band 3D model of a semimetal is constructed to see which normal state features of the Ba(Fe1-xCox)2As2 superconductors can be qualitatively understood within this framework. The model is able to account in a semiquantitative fashion for the measured magnetic susceptibility, Hall, and Seebeck data, and the low temperature Sommerfeld coefficient for 0 general conclusion from the model is that the magnetic susceptibility of most semimetals should increase with temperatures. This is indeed found to be the case for two well-known semimetals Bi and TiSe2. Research supported by the US DOE, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering.

Manufacture of Bi-cuprate thin films on MgO single crystal substrates by chemical solution deposition

DEFF Research Database (Denmark)

Grivel, Jean-Claude; Bertelsen, Christian Vinther; Andersen, Niels Hessel

2014-01-01

Bi2Sr2CaCu2O8 thin films have been deposited on MgO single crystal substrates by spin-coating a solution based on 2-ethylhexanoate precursors dissolved in xylene. Pyrolysis takes place between 200°C and 450°C and is accompanied by the release of 2-ethylhexanoic acid, CO2 and H2O vapour. Highly c...

Synthesis and structural characterization of bulk Sb2Te3 single crystal

Science.gov (United States)

Sultana, Rabia; Gahtori, Bhasker; Meena, R. S.; Awana, V. P. S.

2018-05-01

We report the growth and characterization of bulk Sb2Te3 single crystal synthesized by the self flux method via solid state reaction route from high temperature melt (850˚C) and slow cooling (2˚C/hour) of constituent elements. The single crystal X-ray diffraction pattern showed the 00l alignment and the high crystalline nature of the resultant sample. The rietveld fitted room temperature powder XRD revealed the phase purity and rhombohedral structure of the synthesized crystal. The formation and analysis of unit cell structure further verified the rhombohedral structure composed of three quintuple layers stacked one over the other. The SEM image showed the layered directional growth of the synthesized crystal carried out using the ZEISS-EVOMA-10 scanning electron microscope The electrical resistivity measurement was carried out using the conventional four-probe method on a quantum design Physical Property Measurement System (PPMS). The temperature dependent electrical resistivity plot for studied Sb2Te3 single crystal depicts metallic behaviour in the absence of any applied magnetic field. The synthesis as well as the structural characterization of as grown Sb2Te3 single crystal is reported and discussed in the present letter.

Single-Crystal Growth of Cl-Doped n-Type SnS Using SnCl2 Self-Flux.

Science.gov (United States)

Iguchi, Yuki; Inoue, Kazutoshi; Sugiyama, Taiki; Yanagi, Hiroshi

2018-06-05

SnS is a promising photovoltaic semiconductor owing to its suitable band gap energy and high optical absorption coefficient for highly efficient thin film solar cells. The most significant carnage is demonstration of n-type SnS. In this study, Cl-doped n-type single crystals were grown using SnCl 2 self-flux method. The obtained crystal was lamellar, with length and width of a few millimeters and thickness ranging between 28 and 39 μm. X-ray diffraction measurements revealed the single crystals had an orthorhombic unit cell. Since the ionic radii of S 2- and Cl - are similar, Cl doping did not result in substantial change in lattice parameter. All the elements were homogeneously distributed on a cleaved surface; the Sn/(S + Cl) ratio was 1.00. The crystal was an n-type degenerate semiconductor with a carrier concentration of ∼3 × 10 17 cm -3 . Hall mobility at 300 K was 252 cm 2 V -1 s -1 and reached 363 cm 2 V -1 s -1 at 142 K.

Growth and characterization of 2-Methylimidazolium D-tartrate single crystal

Science.gov (United States)

Srinivasan, T. P.; Anandhi, S.; Gopalakrishnan, R.

2011-03-01

Single crystal of 2-Methylimidazolium D-tartrate (2MImdT; C8N2O6H12) has been grown by slow evaporation solution growth technique at room temperature using mixed solvents of ethanol and deionized water. Single crystal X-ray diffraction study confirms that 2-Methylimidazolium D-tartrate belongs to monoclinic crystal system with non-centrosymmetric space group P21. The Fourier transform infrared spectrum of 2-Methylimidazolium D-tartrate reveals the presence of methyl and carboxyl functional groups in the compound. The mechanical properties of 2MImdT crystal were studied. The theoretical factor group analysis predicts 168 optical modes in the title compound. The dielectric behavior of 2MImdT crystals was studied at different frequencies and temperatures. Decomposition and melting point of 2MImdT were found using thermal measurements. SHG behavior of the title compound was demonstrated using Q-switched Nd:YAG laser.

Single-crystal LiNi{sub 0.6}Co{sub 0.2}Mn{sub 0.2}O{sub 2} as high performance cathode materials for Li-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Wang, Lei [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing Key Laboratory of Environment Science and Engineering, Beijing 100081 (China); Wu, Borong, E-mail: wubr@bit.edu.cn [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing Key Laboratory of Environment Science and Engineering, Beijing 100081 (China); Beijing Higher Institution Engineering Research Center of Power Battery and Chemical Energy Materials, Beijing 100081 (China); Collaborative Innovation Center of Electric Vehicles in Beijing, Beijing 100081 (China); Mu, Daobin, E-mail: mudb@bit.edu.cn [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing Key Laboratory of Environment Science and Engineering, Beijing 100081 (China); Beijing Higher Institution Engineering Research Center of Power Battery and Chemical Energy Materials, Beijing 100081 (China); Liu, Xiaojiang [Institute of Electric Engineering, China Academy of Engineering Physics, Mianyang 621900 (China); Peng, Yiyuan [Key Laboratory of Small Fuctional Organic Molecule, Ministry of Education, Jiangxi Normal University, Nanchang 330022 (China); Xu, Hongliang; Liu, Qi; Gai, Liang [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing Key Laboratory of Environment Science and Engineering, Beijing 100081 (China); Wu, Feng [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing Key Laboratory of Environment Science and Engineering, Beijing 100081 (China); Beijing Higher Institution Engineering Research Center of Power Battery and Chemical Energy Materials, Beijing 100081 (China); Collaborative Innovation Center of Electric Vehicles in Beijing, Beijing 100081 (China)

2016-07-25

Single-crystal nickel-high materials (ST-LNCMO) LiNi{sub 0.6}Co{sub 0.2}Mn{sub 0.2}O{sub 2} have been synthesized using a versatile hydrothermal method. The as-prepared samples are characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM), and selected area electron diffraction (SAED). The results show that the sample annealed at an optimized temperature of 850 °C reveals uniform fine well-crystallized single-particles with diameters of ~800 nm. Electrochemical data demonstrate that the cell using this nickel-high material as the cathode exhibits excellent performance. The sample displays a high capacity of 183.7 mA h·g{sup −1} at 36 mA·g{sup −1} (0.2 C) and excellent cycling stability at different rates. It yields an initial discharge capacity of 153.6 mA h·g{sup −1} at a rate of 10C-rate and a voltage of 2.8 V – 4.3 V. The sample also has an outstanding rate capacity at a high cut-off voltage (4.6 V). This superior performance is attributed to the merits of the single-crystal structure, which may be beneficial to the transportation of the Li{sup +} ion along the grain. - Highlights: • A single-crystal LiNi{sub 0.6}Co{sub 0.2}Mn{sub 0.2}O{sub 2} is prepared by a hydrothermal method. • A high discharge capacity of 183.7 mA h·g{sup −1} at 0.2 C and good cycling stability. • It yields an initial discharge capacity of 153.6 mA h·g{sup −1} at 10 C-rate under 2.8 V–4.3 V. • Superior electrochemical performance may be obtained attributed to the single-crystal structure.

Growth Aspects, Structural and Optical Properties of 2-aminopyridinium 2,4 Dinitrophenolate Single Crystal

Directory of Open Access Journals (Sweden)

S. Reena Devi

2017-06-01

Full Text Available Organic single crystal of 2-aminopyridinium 2,4-dinitrophenolate single crystal was grown by slow evaporation technique. The cell parameters and space group (P were determined from single X-ray diffraction analysis. HRXRD studies ascertained the crystalline quality. UV-Visible and PL spectral studies revealed the emission in red region, transparency (75% cutoff wavelength around 440 nm respectively. The laser damage threshold of grown crystal was estimated by using Nd:YAG laser beam and these results were mutually related with specific heat capacity of the grown crystal. The third-order nonlinear optical parameters were estimated by Z-scan technique which is useful for optical applications.

Single crystal growth and characterization of kagomé-lattice shandites Co3Sn2-xInxS2

Science.gov (United States)

Kassem, Mohamed A.; Tabata, Yoshikazu; Waki, Takeshi; Nakamura, Hiroyuki

2015-09-01

Single crystals of the shandite-type half metallic ferromagnet Co3Sn2S2, and its In-substituted compounds, Co3Sn2-xInxS2 (02) were grown by a flux method. We report optimum conditions to synthesize large crystals. Single crystals of the two end members, Co3Sn2S2 and Co3In2S2, and solid solutions with low In concentrations (x≤0.35) were grown out of Sn and In self flux. Solid solution single crystals with higher In concentrations were grown out of Sn, In and Pb mixture flux. Grown crystals were characterized using the powder x-ray diffraction, wavelength-dispersive x-ray spectroscopy and magnetization measurements. The shandite structure with R3¯m symmetry was confirmed and crystal structure parameters of the obtained plate-shaped hexagonal crystals were refined using the Rietveld analysis. Magnetization measurements show suppression of the ferromagnetic ordering, observed in Co3Sn2S2, by In-substitution as reported for polycrystalline samples. The obtained crystals are useful to study anisotropy in magnetic and transport properties and further interesting magnetotransport properties of the layered compounds.

Crystal structure investigations of ZrAsxSey (x>y, x+y≤2) by single crystal neutron diffraction at 300 K, 25 K and 2.3 K

International Nuclear Information System (INIS)

Niewa, Rainer; Czulucki, Andreas; Schmidt, Marcus; Auffermann, Gudrun; Cichorek, Tomasz; Meven, Martin; Pedersen, Bjoern; Steglich, Frank; Kniep, Ruediger

2010-01-01

Large single crystals of ZrAs x Se y (x>y, x+y≤2, PbFCl type of structure, space group P4/nmm) were grown by Chemical Transport. Structural details were studied by single crystal neutron diffraction techniques at various temperatures. One single crystal specimen with chemical composition ZrAs 1.595(3) Se 0.393(1) was studied at ambient temperature (R1=5.10 %, wR2=13.18 %), and a second crystal with composition ZrAs 1.420(3) Se 0.560(1) was investigated at 25 K (R1=2.70%, wR2=5.70 %) and 2.3 K (R1=2.30 %, wR2=4.70 %), respectively. The chemical compositions of the crystals under investigation were determined by wavelength dispersive X-ray spectroscopy. The quantification of trace elements was carried out by Laser Ablation-Inductively Coupled Plasma-Mass Spectrometry. According to the crystal structure refinements the crystallographic 2a site is occupied by As, together with a significant amount of vacancies. One of the 2c sites is fully occupied by As and Se (random distribution). With respect to the fractional coordinates of the atoms, the crystal structure determinations based on the data obtained at 25.0 K and 2.3 K did not show significant deviations from ambient temperature results. The temperature dependence of the displacement parameters indicates a static displacement of As on the 2a sites (located on the (0 0 1) planes) for all temperatures. No indications for any occupation of interstitial sites or the presence of vacancies on the Zr (2a) site were found. - Graphical abstract: Large single crystals of ZrAs x Se y grown by Chemical Transport to study structural details as the As-Se order scheme by single crystal neutron diffraction.

Competing superconducting and magnetic order parameters and field-induced magnetism in electron doped Ba(Fe1-xCox)2As2

DEFF Research Database (Denmark)

Larsen, Jacob; Uranga, B. Mencia; Stieber, G.

2015-01-01

We have studied the magnetic and superconducting properties of Ba(Fe1-xCox)2As2 as a function of temperature and external magnetic field using neutron scattering and muon spin rotation. Below the superconducting transition temperature the magnetic and superconducting order parameters coexist...... and compete. A magnetic field can significantly enhance the magnetic scattering in the superconducting state, roughly doubling the Bragg intensity at 13.5 T. We perform a microscopic modelling of the data by use of a five-band Hamiltonian relevant to iron pnictides. In the superconducting state, vortices can...... slow down and freeze spin fluctuations locally. When such regions couple they result in a long-range ordered antiferromagnetic phase producing the enhanced magnetic elastic scattering in agreement with experiments....

Electrical and magnetic properties of 0-3 Ba(Fe1/2Nb1/2)O3/PVDF composites

Science.gov (United States)

Ranjan, Hars; Mahto, Uttam K.; Chandra, K. P.; Kulkarni, A. R.; Prasad, A.; Prasad, K.

Lead-free Ba(Fe1/2Nb1/2)O3/PVDF 0-3 composites were fabricated using melt-mixing technique. X-ray diffraction, scanning electron microscopy, dielectric, impedance, ac conductivity, magnetic force microscopy (MFM) and vibrating sample magnetometer studies were undertaken to characterize the samples. Average crystallite size of the Ba(Fe1/2Nb1/2)O3 powder, estimated using Williamson-Hall approach, was found to be ˜42nm. The filler particles of ˜0.5-1μm were found to disperse in the polymer matrix of all the composites. Filler concentration-dependent values of real and imaginary parts of complex permittivity showed increasing trend and were seen to follow Bruggeman and Furukawa equations. The data for ac conductivity exhibited negative temperature coefficient of resistance character of the test materials and were found to obey Jonscher’s power law. The correlated barrier hopping model was found to explain satisfactorily the mechanism of charge transport occurring in the system. MFM confirmed the presence of magnetic phases in the composites. Typical magnetization versus applied field curves indicated the possibility of magnetoelectric coupling in the system. Hence, the present composites have shown themselves as potential multi-functional candidate materials for use in high density data storage applications.

Magnetic anisotropy of YNi2B2C single crystals

International Nuclear Information System (INIS)

Baran, M.; Gladczuk, L.; Gorecka, J.; Szymczak, H.; Szymczak, R.; Drzazga, Z.; Winiarska, H.

1994-01-01

Reversible and irreversible magnetization processes in YNi 2 B 2 C single crystal have been measured and analysed in terms of existing theories. Performed measurements suggest that anisotropy of the effective mass in YNi 2 B 2 C superconductor is rather small and similar to that observed in conventional superconductors. Effect of hydrostatic pressure on T c is shown to be typical of low-temperature superconductors. It is suggested that the layered structure of YNi 2 B 2 C has some effect on the irreversible magnetization processes observed in this superconductor. ((orig.))

Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001)

Energy Technology Data Exchange (ETDEWEB)

Chawla, J. S.; Zhang, X. Y.; Gall, D. [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2011-08-15

Single-crystal Cu(001) layers, 4-1400 nm thick, were deposited on MgO(001) with and without a 2.5-nm-thick TiN(001) buffer layer. X-ray diffraction and reflection indicate that the TiN(001) surface suppresses Cu-dewetting, yielding a 4 x lower defect density and a 9 x smaller surface roughness than if grown on MgO(001) at 25 deg. C. In situ and low temperature electron transport measurements indicate that ultra-thin (4 nm) Cu(001) remains continuous and exhibits partial specular scattering at the Cu-vacuum boundary with a Fuchs-Sondheimer specularity parameter p = 0.6 {+-} 0.2, suggesting that the use of epitaxial wetting layers is a promising approach to create low-resistivity single-crystal Cu nanoelectronic interconnects.

Annealing effect on superconductivity of La2CuO4 single crystals

International Nuclear Information System (INIS)

Tanaka, I.; Takahashi, H.; Kojima, H.

1992-01-01

This paper reports that La 2 CuO 4 single crystals grown at an oxygen pressure of 0.2 MPa by TSFZ method are superconducting below 32 K, and show a semiconducting behavior in nonsuperconducting state. The single crystals of La 2 CuO 4 are changed from superconductors to semiconductors by annealing in argon, and are returned to superconductors by annealing at ambient pressure of oxygen. Therefore, superconductivity of the La 2 CuO 4 single crystals is due to excess oxygen

Annealing effect on superconductivity of La2CuO4 single crystals

International Nuclear Information System (INIS)

Tanaka, L.; Takahashi, H.; Kojima, H.

1992-01-01

La 2 CuO 4 single crystals grown at an oxygen pressure of 0.2 MPa by TSFZ method are superconducting below 32 K, and show a semiconducting behavior in nonsuperconducting state. The single crystals of La 2 CuO 4 are changed from superconductors to semiconductors by annealing in argon, and are returned to superconductors by annealing at ambient pressure of oxygen. Therefore, superconductivity of the La 2 CuO 4 single crystals is due to excess oxygen. (orig.)

Synthesis and photocatalytic activity of mesoporous – (001) facets TiO_2 single crystals

International Nuclear Information System (INIS)

Dong, Yeshuo; Fei, Xuening; Zhou, Yongzhu

2017-01-01

Highlights: • The (001) facets of TiO_2 single crystals with mesoporous structure. • The (010) and (100) facets of TiO_2 single crystals were covered by the flower – shaped TiO_2 crystals. • This special structure could promote charge separation and provide more active sites, which will lead to a substantial increase in photocatalytic activity. - Abstract: In this work, the mesoporous – (001) facets TiO_2 single crystals have been successfully synthesized through a two-step solvothermal route without any template. Their structure and morphology were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible (UV–vis) diffuse reflectance spectroscopy and energy dispersive X-ray spectrometer (EDX). Based on the different characteristics and atomic arrangements on each facet of anatase TiO_2 single crystals, we synthesized these mesoporous – (001) facets TiO_2 single crystals by controlling the interaction characteristics of hydrofluoric acid (HF) and isopropanol (i-PrOH) on the crystal facets. It can been seen that the (001) facets of these as-synthesized TiO_2 single crystals have a clear mesoporous structure through the SEM images and BET methods. Moreover, the other four facets were covered by the flower – shaped TiO_2 crystals with the generation of the mesoporous – (001) facets. This special and interesting morphology could promote charge separation and provide more active sites, which will lead to a substantial increase in photocatalytic activity. Moreover, it is more intuitive to reflect that the different crystal facets possess the different properties due to their atomic arrangement. Besides, according to the different synthetic routes, we proposed and discussed a plausible synthesis mechanism of these mesoporous – (001) facets TiO_2 single crystals.

Blue luminescence in Tm3+-doped KGd(WO4)2 single crystals

International Nuclear Information System (INIS)

Gueell, F.; Mateos, X.; Gavalda, Jna.; Sole, R.; Aguilo, M.; Diaz, F.; Massons, J.

2004-01-01

Up-conversion blue emissions of trivalent thulium ions in monoclinic KGd(WO 4 ) 2 single crystals at 454 and 479 nm are reported for a single pump laser source at 688 nm. We grew thulium-doped KGd(WO 4 ) 2 single crystals at several concentrations from 0.1% to 10%. We recorded a polarized optical absorption spectrum for the 3 F 2 + 3 F 3 energy levels of thulium at room temperature and low temperature (6 K). From the low temperature emission spectra we determined the splitting of the 3 H 6 ground state. The blue emissions are characterized as a function of the dopant concentration and temperature from 10 K to room temperature. To our knowledge, this is the first time that sequential two-photon excitation process (STEP) generated blue emissions in thulium-doped single crystals with a single excitation wavelength

Photonic-crystal switch divider based on Ge2Sb2Te5 thin films.

Science.gov (United States)

Ma, Beijiao; Zhang, Peiqing; Wang, Hui; Zhang, Tengyu; Zeng, Jianghui; Zhang, Qian; Wang, Guoxiang; Xu, Peipeng; Zhang, Wei; Dai, Shixun

2016-11-10

A three-port phase-change photonic-crystal switch divider based on Ge2Sb2Te5 chalcogenide thin film was proposed. The chalcogenide material used was determined to have a high refractive index and fast phase-change speed by using laser radiation. The structure with a T-junction cavity was used to achieve three switch functions: switching "ON" in only one output port, switching "OFF" in both output ports, and dividing signals into two output ports. The transmission properties of the designed device at 2.0 μm were studied by the finite difference time domain method, which showed that the switch divider can achieve very high switching efficiency by optimizing T-junction cavity parameters. The scaling laws of photonic crystals revealed that the operating wavelength of the designed structure can be easily extended to another wavelength in the midinfrared region.

Preparation of TiO2 thin films from autoclaved sol containing needle-like anatase crystals

International Nuclear Information System (INIS)

Ge Lei; Xu Mingxia; Fang Haibo; Sun Ming

2006-01-01

A new inorganic sol-gel method was introduced in this paper to prepare TiO 2 thin films. The autoclaved sol with needle-like anatase crystals was synthesized using titanyl sulfate (TiOSO 4 ) and peroxide (H 2 O 2 ) as starting materials. The transparent anatase TiO 2 thin films were prepared on glass slides from the autoclaved sol by sol-gel dip-coating method. A wide range of techniques such as Fourier transform infrared transmission spectra (FT-IR), X-ray diffraction (XRD), thermogravimetry-differential thermal analysis (TG-DTA), scanning electron microscopes, X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible spectrum were applied to characterize the autoclaved sol and TiO 2 thin films. The results indicate that the autoclaved sol is flavescent, semitransparent and stable at room temperature. The anatase crystals of TiO 2 films connect together to form net-like structure after calcined and the films become uniform with increasing heating temperature. The surface of the TiO 2 films contain not only Ti and O elements, but also a small amount of N and Na elements diffused from substrates during heat treatment. The TiO 2 films are transparent and their maximal light transmittances exceed 80% under visible light region

Vortex pinning in artificially layered Ba(Fe,Co)2As2 film

Science.gov (United States)

Oh, M. J.; Lee, Jongmin; Seo, Sehun; Yoon, Sejun; Seo, M. S.; Park, S. Y.; Kim, Ho-Sup; Ha, Dong-Woo; Lee, Sanghan; Jo, Youn Jung

2018-06-01

Static high critical current densities (Jc) > 1 MA/cm2 with magnetic field parallel or perpendicular to c-axis were realized in Co-doped/undoped multilayerd BaFe2As2 films. We made a current bridge by FIB to allow precise measurements, and confirmed that the boundary quality using FIB was considerably better than the quality achieved using a laser. The presence of a high in-plane Jc suggested the existence of c-axis correlated vortex pinning centers. To clarify the relationship between the Jc performance and superstructures, we investigated the magnetic flux pinning mechanism using scaling theory of the volume pinning force Fp(H). The Jc(H) curves, Fp/Fp,max vs. h = H/Hirr curves, and parameters p and q depended on the characteristics of the flux pinning mechanism. It was found that the dominant pinning mechanism of Co-doped/undoped multilayerd BaFe2As2 films was Δl-pinning and the inserted undoped BaFe2As2 layers remained non-superconducting. The dominant pin geometry varied when the magnetic field direction changed. It was concluded that the artificially layered BaFe2As2 film is a 3-D superconductor due to its long correlation length compared to the thickness of the non-superconducting layer.

Large-scale single-crystal growth of (CH3)2NH2CuCl3 for neutron scattering experiments

Science.gov (United States)

Park, Garam; Oh, In-Hwan; Park, J. M. Sungil; Park, Seong-Hun; Hong, Chang Seop; Lee, Kwang-Sei

2016-05-01

Neutron scattering studies on low-dimensional quantum spin systems require large-size single-crystals. Single-crystals of (CH3)2NH2CuCl3 showing low-dimensional magnetic behaviors were grown by a slow solvent evaporation method in a two-solvent system at different temperature settings. The best results were obtained for the bilayer solution of methanol and isopropanol with a molar ratio of 2:1 at 35 °C. The quality of the obtained single-crystals was tested by powder and single-crystal X-ray diffraction and single-crystal neutron diffraction. In addition, to confirm structural phase transitions (SPTs), thermal analysis and single-crystal X-ray diffraction at 300 K and 175 K, respectively, were conducted, confirming the presence of a SPT at Tup=288 K on heating and Tdown=285 K on cooling.

Commensurability oscillations in NdBa2Cu3Oy single crystals

Indian Academy of Sciences (India)

gated by angular dependent magnetization in very pure twinned and twin-free NdBa2 Cu3 Oy single ... The layered structure and the c-axis coherence length, ξc ≈ 4 ˚A, smaller than the lattice ... The high quality of both crystals is demonstrated by ... Commensurability oscillations in NdBa2Cu3Oy single crystals. 2. 3. 4. 5. 6.

All-organic polymer-dispersed liquid crystal light-valves integrated with electroactive anthraquinone-2-sulfonate-doped polypyrrole thin films as driving electrodes

International Nuclear Information System (INIS)

Wang, Pen-Cheng; Yu, Jing-Yu; Li, Kuan-Hsun

2011-01-01

Highlights: → Fabrication of flexible semi-transparent all-polymer electrodes under ambient conditions without using a CVD system. → Characterization of the above electrodes based on anthraquinone-2-sulfonate-doped polypyrrole thin films. → Demonstration of all-organic liquid crystal light-valves with polypyrrole thin films as the driving electrodes. - Abstract: All-organic PDLC (polymer-dispersed liquid crystal) light-valves using all-polymer conductive substrates containing thin films of polypyrrole doped with anthraquinone-2-sulfonate (AQSA - ) as the driving electrodes were fabricated in this study. The all-polymer conductive substrates were prepared under ambient conditions by in situ depositing polypyrrole thin films on blank flexible poly(ethylene terephthalate), or PET, substrates from aqueous media in which oxidative polymerization of pyrrole was taking place. The obtained flexible all-polymer conductive substrates were semi-transparent with cohesive coatings of AQSA - doped polypyrrole thin films (thickness ∼55 nm). The all-polymer flexible conductive substrates had sheet resistivity ∼40 kΩ □ -1 and T% transparency against air ∼78% at 600 nm. The light-valves fabricated using the above all-polymer conductive substrates showed ∼50% transparency against air at 600 nm when 4 V μm -1 electric field was applied.

Single crystal growth and anisotropic magnetic properties of HoAl2Ge2

Science.gov (United States)

Matin, Md.; Mondal, Rajib; Thamizhavel, A.; Provino, A.; Manfrinetti, P.; Dhar, S. K.

2018-05-01

We have grown a single crystal of HoAl2Ge2, which crystallizes in the hexagonal CaAl2Si2 type structure with Ho ions in the trigonal coordination in the ab plane. The data obtained from the bulk measurement techniques of magnetization, heat capacity and transport reveal that HoAl2Ge2 orders antiferromagnetically at TN ˜6.5 K. The susceptibility below TN and isothermal magnetization at 2 K indicate the ab plane as the easy plane of magnetization. Heat capacity data reveal a prominent Schottky anomaly with a broad peak centered around 25 K, suggesting a relatively low crystal electric field (CEF) splitting. The electrical resistivity reveals the occurrence of a superzone gap below TN. The point charge model of the CEF is applied to the magnetization and the heat capacity data. While a good fit to the paramagnetic susceptibility is obtained, the CEF parameters do not provide a satisfactory fit to the isothermal magnetization at 2 K and the Schottky anomaly.

Positron annihilation in single crystals of TiO2, VO2, Pb, and U

International Nuclear Information System (INIS)

Blau, M.

1982-09-01

Two positron annihilation set-ups for Doppler broadening correlation measurements are described. The Doppler broadening spectra were measured in different directions of single crystals of TiO 2 and VO 2 , at room temperature. The anisotropy was explained using two models in which the positron behaves as a free or bounded particle, and was related to the effective charge on the oxygen ion. The changes in the spectra in VO 2 , on passing from the insulator to the metal phase, were found to be gradual and small. The results indicate that the main contribution to the metal-insulator transition is due to changes in the relative occupation of the oxygen p-states and not to changes in covalency or screening. Angular correlations were measured in single crystals of lead in three crystallographic directions. The derivatives of the spectra were compared with the Fermi surface obtained from dHvA measurements, using plane-wave electrons. Most of the features of the experimental derivatives were explained with this simple model. Angular correlation measurements were made on single crystals of uranium in two crystallographic directions. The derivates of the spectra were very wide with a few peaks. (Author)

Structure and magnetic properties of flux grown single crystals of Co3-xFexSn2S2 shandites

Science.gov (United States)

Kassem, Mohamed A.; Tabata, Yoshikazu; Waki, Takeshi; Nakamura, Hiroyuki

2016-01-01

We report a successful single crystal growth of the shandite-type half-metallic ferromagnet Co3Sn2S2, and its Fe-substituted compounds, Co3-xFexSn2S2, by employing the flux method. Although Fe3Sn2S2 is unstable phase, we found that using the self Sn flux enables us to obtain single phase crystals up to x=0.53. The chemical composition of the grown plate-shaped single crystals was examined using wavelength-dispersive X-ray spectroscopy. The shandite structure with R 3 ̅m symmetry was confirmed by powder X-ray diffraction and the crystal structure parameters were refined using the Rietveld method. Magnetization measurements show suppression of the ferromagnetic order upon Fe-substitution , as well as in other substituted systems such as In- and Ni-substituted Co3Sn2S2. The almost identical magnetic phase diagrams of the Fe- and In-substituted compounds indicate that the electron number is dominantly significant to the magnetism in the Co-based shandite.

First-order phase transitions in CaFe2As2 single crystal: a local probe study

International Nuclear Information System (INIS)

Alzamora, M; Munevar, J; Baggio-Saitovitch, E; Bud'ko, S L; Ni Ni; Canfield, P C; Sanchez, D R

2011-01-01

57 Fe Moessbauer spectroscopy has been used to investigate the structural and magnetic phase transitions of CaFe 2 As 2 (T N = 173 K) single crystals. For this compound we found that V ZZ is positive and parallel to the c-axis of the tetragonal structure. For CaFe 2 As 2 a magnetic hyperfine field B hf was observed at the 57 Fe nucleus below T N ∼ 173 K. Analysis of the temperature dependence of B hf data using the Bean-Rodbell model shows that the Fe spins undergo a first-order magnetic transition at ∼ 173 K. A collinear antiferromagnetic structure is established below this temperature with the Fe spin lying in the (a, b) plane. Below T N the paramagnetic fraction of Fe decreases down to 150 K and for lower temperatures all the Fe spins are magnetically ordered.

Single-crystal structure refinement of YbF{sub 2} with a remark about YbH{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Reckeweg, Olaf; DiSalvo, Francis J. [Cornell Univ., Ithaca, NY (United States). Dept. of Chemistry and Chemical Biology

2017-07-01

Transparent-yellow single crystals of YbF{sub 2} were obtained as only crystalline product from the solid-state reaction of Yb and teflon designed to yield 'Yb{sub 3}C{sub 3}F{sub 2}' in addition to some amorphous black material. The first single-crystal structure determination of YbF{sub 2} (cubic space group Fm anti 3m, CaF{sub 2}-type structure, a = 559.46(16) pm; R1 = 1.2%, wR2 = 3.2%) was the starting point to compare isostructural binary fluorides MF{sub 2} and hydrides MH{sub 2} (M = Ca, Yb, Eu, Sr and Ba) exhibiting an as-yet unexplained small volume per formula unit for YbH{sub 2}.

Influence of Ba/Fe mole ratios on magnetic properties, crystallite size and shifting of X-ray diffraction peaks of nanocrystalline BaFe12O19 powder, prepared by sol gel auto combu

Science.gov (United States)

Suastiyanti, Dwita; Sudarmaji, Arif; Soegijono, Bambang

2012-06-01

Barium hexaferrite BaFe12O19 (BFO) is of great importance as permanent magnets, particularly for magnetic recording as well as in microwave devices. Nano-crystalline BFO powders were prepared by sol gel auto combustion method in citric acid - metal nitrates system. Hence the mole ratios of Ba/Fe were variated at 1:12; 1:11.5 and 1:11. Ratio of cation to fuel was fixed at 1:1. An appropriate amount of amonia solution was added dropwise to this solution with constant stirring until the PH reached 7 in all cases. Heating at 850oC for 10 hours for each sample to get final formation of BFO nanocrystalline. The data from XRD showing the lattice parameters a,c and the unit-cell volume V, confirm that BFO with ratio 1:12 has same crystall parameters with ratio 1:11. Ratio of Ba/Fe 1:12 and 1:11 have diffraction pattern similarly at almost each 2 θ for each samples. Ratio of Ba/Fe 1: 11.5 has the finest crystallite size 22 nm. Almost diffraction pattern peaks of Ba/Fe 1:11.5 move to the left from of Ba/Fe 1:12 then return to diffraction pattern of Ba/Fe 1:12 for Ba/Fe 1:11. SEM observations show the particle size less than 100 nm and the same shape for each sample. Ratio of Ba/Fe 1: 12 gives the highest intrinsic coercive Hc = 427.3 kA/m. The highest remanent magnetization is at ratio 1:11 with Mr = 0.170 T. BFO with mole ratio 1:11.5 has the finest grain 22 nm, good magnetic properties and the highest value of best FoM 89%.

Single-Crystal Mesoporous ZnO Thin Films Composed of Nanowalls

KAUST Repository

Wang, Xudong; Ding, Yong; Li, Zhou; Song, Jinhui; Wang, Zhong Lin

2009-01-01

This paper presents a controlled, large scale fabrication of mesoporous ZnO thin films. The entire ZnO mesoporous film is one piece of a single crystal, while high porosity made of nanowalls is present. The growth mechanism was proposed

Peculiarities of linear thermal expansion of CuInS2 single crystal

International Nuclear Information System (INIS)

Akira, Nagaoka; Kenji, Yoshino; Hideto, Miyake

2010-01-01

Full text : I-III-VI 2 chalcopyrire semiconductors have made rapid progress in recent years. In addition chalcopyrite semiconductors show unique thermal properties. Usually, liner thermal expansion in semiconductors increases with increasing temperature. However, liner thermal expansion of most chalcopyrite semiconductors decreases at low temperature. For example, AgGaSe 2 shows decreasing the liner thermal expansion below 100 K 1 , 2). It is well known that high-quality single crystals of the I-III-VI 2 compounds are difficult to grow because most of the compounds grow through a peritectic reaction or a solid state transition during the cooling process. CuInS 2 single crystal can be grown by traveling heater method (THM), which is one of the solution growth techniques. Advantages of the THM growth are following that growth temperature is low compared with that of the other melt growth and larger crystals can be grown compared with a conventional solution growth. In a previous study, CuGaS 2 , CuGaSe 2 , CuGaTe 2 , CuInSe 2 ternary compounds have been obtained by the THM technique. In this work, it is investigated a liner thermal expansion of single crystal CuInS 2 by using X-ray diffraction. Measurement temperature was changed from 10 K to 300 K. From results of XRD measurement, it is calculated lattice constants of a and c axes and the liner thermal expansion. As a result, lattice constants of a axis increase with increasing temperature, that of c axis decreases with increasing temperature. The liner thermal expansion decreases for T 2 single crystal at low temperature

Single-crystal structure, photophysical characteristics and electroluminescent properties of bis(2-(4-trifluoromethyl-2-hydroxyphenyl)benzothiazolate)zinc

International Nuclear Information System (INIS)

Xu Huixia; Yue, Yan; Wang Hua; Chen Liuqing; Hao Yuying; Xu Bingshe

2012-01-01

In this paper, a zinc (II) complex of Zn 2 (4-tfmBTZ) 4 (4-tfmBTZ=2-(4-trifluoromethyl-2-hydroxyphenyl)benzothiazolate) was reported. Via combination of experimental and theoretical approaches, its molecular structure, photophysical characteristics, electronic structure and electroluminescent properties were investigated. The results indicate that Zn 2 (4-tfmBTZ) 4 exists as five-coordinate geometric structure and two zinc atoms are bridged by oxygen atoms. The intense absorption band was located at 404 nm, which mainly originate from the transition HOMO−1 to LUMO+2. The blue-light emission was observed in tetrahydrofuran solution and thin film. White-light emission with four emission peaks was observed with CIE coordinate of (0.29, 0.33) and a higher CRI of 85.1 by fabricating bilayer device using Zn 2 (4-tfmBTZ) 4 as electron-transport and NPB as hole-transport material. - Highlights: ► The single-crystal and electronic structures of Zn 2 (4-tfmBTZ) 4 . ► The multicolor emission of Zn 2 (4-tfmBTZ) 4 were realized by the simple devices. ► White OLED is achieved with particularly high color rending index (CRI) by the emission of Zn 2 (4-tfmBTZ) 4 .

van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

Science.gov (United States)

Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

2018-03-01

Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

RNi2B2C (R = Ho, Dy, Tb and Pr) single crystals grown by the cold copper crucible method

Science.gov (United States)

Durán, A.; Munoz, E.; Bernès, S.; Escudero, R.

2000-08-01

Single crystals of RNi2B2C (R = Ho, Dy, Tb, Pr) have been grown on cold copper crucibles in a high-frequency induction furnace. As a result, shiny metallic and brittle platelike single crystals were obtained. They were examined by x-ray and scanning electron microscopy with WDX/EDX for local composition analysis and show a very good crystallographic structure and compositions. Resistivity and dc magnetic measurements were performed to study superconducting and magnetic properties. Besides known electronic properties of the RNi2B2C family, we report for the first time results for PrNi2B2C single crystals successfully obtained by this technique.

Measurement of positron reemission from thin single-crystal W(100) films

International Nuclear Information System (INIS)

Chen, D.M.; Lynn, K.G.; Pareja, R.; Nielsen, B.

1985-01-01

Epitaxial thin single-crystal (100) tungsten films 1000, 2500, and 5000 A thick have been fabricated by high-vacuum electron-beam evaporation. These films were subsequently used as thin-film moderators for the study of the positron-transmission-reemission process with a variable-energy (0--80 keV) monoenergetic positron beam in an ultrahigh-vacuum system. The films were shown to be routinely cleanable by heating first in oxygen (10 -6 Torr) and then in vacuum (10 -9 Torr). Transmission and back reemission of slow positrons from these surfaces was observed. The positron work function, phi/sub +/ has been determined to be approx. =3.0 eV ( +- 0.3 eV). The transmission slow positrons were emitted in a narrow cone with a full width at half maximum of approx. =30 0 consistent with the angular distribution of back-reemission positrons. The reemitted yields as a function of incident positron energy were found to be very different between forward reemission and back reemission. The maximum forward-reemission yields were 18% for 1000-A-thick W film and 12% for 2500-A-thick W film at 5 and 10 keV optimum incident positron energies, respectively. These results show that one can use thin single-crystal tungsten films as positron moderators or remoderators

Evolution of Spin fluctuations in CaFe2As2 with Co-doping.

Science.gov (United States)

Sapkota, A.; Das, P.; Böhmer, A. E.; Abernathy, D. L.; Canfield, P. C.; Kreyssig, A.; McQueeney, R. J.; Goldman, A. I.

Spin fluctuations are an essential ingredient for superconductivity in Fe-based supercondcutors. In Co-doped BaFe2As2, the system goes from the antiferromagnetic (AFM) state to the superconducting (SC) state with Co doping, and the spin fluctuations also evolve from well-defined spin waves with spin gap in the AFM regime to gapless overdamped or diffused fluctuations in the SC regime. CaFe2As2 has a stronger magneto-elastic coupling than BaFe2As2 and no co-existence of SC and AFM region as observed in BaFe2As2 with Co doping. Here, we will discuss the evolution of spin fluctuations in CaFe2As2 with Co doping. Work at the Ames Laboratory was supported by US DOE, Basic Energy Sciences, Division of Material Sciences and Engineering, under contract No. DE-AC02-07CH11358. This research used resources of SNS, a DOE office of science user facility operated by ORNL.

Single crystal magnetisation of UFe10Mo2

International Nuclear Information System (INIS)

Estrela, P.; Godinho, M.; Spirlet, J.C.

1997-01-01

Magnetisation measurements have been performed for different directions on aligned UFe 10 Mo 2 single crystals. The results confirm a basal plane anisotropy and suggest an important magnetic contribution from the uranium sublattice. (orig.)

EPR of CU+2:Mb single crystal

International Nuclear Information System (INIS)

Nascimento, O.R.; Ribeiro, S.C.; Bemski, G.

1976-01-01

Copper introduced into met-myoglobin crystals occupies various sites as indicated by EPR parameters. CU 2+ (A) is probably liganded to histidine A10, lysine A14 and asparagine GH4 (Banaszak, 1965) and shows super-hyperfine interaction with a single (imidazole) nitrogen. Cu 2+ (B) and Cu 2+ (C) correspond to other anisotropic sites described with lesser details. Cu 2+ (A) exhibits a transition to an isotropic form with a transition temperature of 40.5 0 C. This transition is indicative of a conformational change in myoglobin and could correspond to a motion of A helix away from the GH section. The transition temperature is 7 0 C higher than the previously reported (Atanasov, 1971) one for myoglobin in solution

Structural effects in UO{sub 2} thin films irradiated with U ions

Energy Technology Data Exchange (ETDEWEB)

Popel, A.J., E-mail: apopel@cantab.net [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ (United Kingdom); Adamska, A.M.; Martin, P.G.; Payton, O.D. [Interface Analysis Centre, School of Physics, University of Bristol, Bristol BS8 1TL (United Kingdom); Lampronti, G.I. [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ (United Kingdom); Picco, L.; Payne, L.; Springell, R.; Scott, T.B. [Interface Analysis Centre, School of Physics, University of Bristol, Bristol BS8 1TL (United Kingdom); Monnet, I.; Grygiel, C. [CIMAP, CEA-CNRS-ENSICAEN-Université de Caen, BP 5133, 14070 Caen Cedex5 (France); Farnan, I. [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ (United Kingdom)

2016-11-01

Highlights: • Quantitative characterisation of radiation damage by kernel average misorientation. • UO{sub 2} (1 1 1) plane showed higher irradiation tolerance than (1 1 0) plane. • UO{sub 2} film-YSZ substrate interface is stable under low fluence irradiation. • (0 0 1), (1 1 0), (1 1 1) single crystal UO{sub 2} thin films on YSZ substrates are expected. - Abstract: This work presents the results of a detailed structural characterisation of irradiated and unirradiated single crystal thin films of UO{sub 2}. Thin films of UO{sub 2} were produced by reactive magnetron sputtering onto (0 0 1), (1 1 0) and (1 1 1) single crystal yttria-stabilised zirconia (YSZ) substrates. Half of the samples were irradiated with 110 MeV {sup 238}U{sup 31+} ions to fluences of 5 × 10{sup 10}, 5 × 10{sup 11} and 5 × 10{sup 12} ions/cm{sup 2} to induce radiation damage, with the remainder kept for reference measurements. It was observed that as-produced UO{sub 2} films adopted the crystallographic orientation of their YSZ substrates. The irradiation fluences used in this study however, were not sufficient to cause any permanent change in the crystalline nature of UO{sub 2}. It has been demonstrated that the effect of epitaxial re-crystallisation of the induced radiation damage can be quantified in terms of kernel average misorientation (KAM) and different crystallographic orientations of UO{sub 2} respond differently to ion irradiation.

Ultralow Self-Doping in 2D Hybrid Perovskite Single Crystals

KAUST Repository

Peng, Wei; Yin, Jun; Ho, Kang-Ting; Ouellette, Olivier; de Bastiani, Michele; Banavoth, Murali; El Tall, Omar; Shen, Chao; Miao, Xiaohe; Pan, Jun; Alarousu, Erkki; He, Jr-Hau; Ooi, Boon S.; Mohammed, Omar F.; Sargent, Edward H.; Bakr, Osman

2017-01-01

-processed semiconductors, including hybrid perovskites, which are usually high in defects due to rapid crystallization. Here, we uncover extremely low self-doping concentrations in single crystals of (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1 (n=1, 2, and 3)—over three orders

Low-Threshold Lasing from 2D Homologous Organic-Inorganic Hybrid Ruddlesden-Popper Perovskite Single Crystals.

Science.gov (United States)

Raghavan, Chinnambedu Murugesan; Chen, Tzu-Pei; Li, Shao-Sian; Chen, Wei-Liang; Lo, Chao-Yuan; Liao, Yu-Ming; Haider, Golam; Lin, Cheng-Chieh; Chen, Chia-Chun; Sankar, Raman; Chang, Yu-Ming; Chou, Fang-Cheng; Chen, Chun-Wei

2018-05-09

Organic-inorganic hybrid two-dimensional (2D) perovskites have recently attracted great attention in optical and optoelectronic applications due to their inherent natural quantum-well structure. We report the growth of high-quality millimeter-sized single crystals belonging to homologous two-dimensional (2D) hybrid organic-inorganic Ruddelsden-Popper perovskites (RPPs) of (BA) 2 (MA) n-1 Pb n I 3 n+1 ( n = 1, 2, and 3) by a slow evaporation at a constant-temperature (SECT) solution-growth strategy. The as-grown 2D hybrid perovskite single crystals exhibit excellent crystallinity, phase purity, and spectral uniformity. Low-threshold lasing behaviors with different emission wavelengths at room temperature have been observed from the homologous 2D hybrid RPP single crystals. Our result demonstrates that solution-growth homologous organic-inorganic hybrid 2D perovskite single crystals open up a new window as a promising candidate for optical gain media.

Strength anomaly in B2 FeAl single crystals

Energy Technology Data Exchange (ETDEWEB)

Yoshimi, K.; Hanada, S.; Yoo, M.H. [Oak Ridge National Lab., TN (United States); Matsumoto, N. [Tohoku Univ. (Japan). Graduate School

1994-12-31

Strength and deformation microstructure of B2 Fe-39 and 48%Al single crystals (composition given in atomic percent), which were fully annealed to remove frozen-in vacancies, have been investigated at temperatures between room temperature and 1073K. The hardness of as-homogenized Fe-48Al is higher than that of as-homogenized Fe-39Al while after additional annealing at 698K the hardness of Fe-48Al becomes lower than that of Fe-39Al. Fe-39Al single crystals slowly cooled after homogenizing at a high temperature were deformed in compression as a function of temperature and crystal orientation. A peak of yield strength appears around 0.5T{sub m} (T{sub m} = melting temperature). The orientation dependence of the critical resolved shear stress does not obey Schmid`s law even at room temperature and is quite different from that of b.c.c. metals and B2 intermetallics at low temperatures. At the peak temperature slip transition from <111>-type to <001>-type is found to occur macroscopically and microscopically, while it is observed in TEM that some of the [111] dislocations decompose into [101] and [010] on the (1096I) plane below the peak temperature. The physical sources for the positive temperature dependence of yield stress of B2 FeAl are discussed based on the obtained results.

Growth and properties of oxygen- and ion-doped Bi2Sr2CaCu2O8+δ single crystals

International Nuclear Information System (INIS)

Mitzi, D.B.; Lombardo, L.W.; Kapitulnik, A.; Laderman, S.S.; Jacowitz, R.D.

1990-01-01

A directional solidification method for growing large single crystals in the Bi 2 Sr 2 CaCu 2 O 8+δ system is reported. Ion doping, with replacement of La for Sr and Y for Ca, as well as oxygen doping in these crystals has been explored. Doped and undoped crystals have been characterized using microprobe analysis, x-ray diffraction, thermogravimetric analysis, and magnetic and Hall measurements. Ion doping results in little change of the superconducting transition for substitution levels below 20--25%, while beyond this level the Meissner signal broadens and the low-temperature Meissner signal decreases. Microprobe analysis and x-ray diffraction performed on these more highly substituted single crystals provide evidence for inhomogeneity and phase segregation into regions of distinct composition. Annealing unsubstituted crystals in increasing partial pressures of oxygen reversibly depresses the superconducting transition temperature from 90 (as made) to 77 K (oxygen pressure annealed), while the carrier concentrations, as determined from Hall effect measurements, increase from n=3.1(3)x10 21 cm -3 (0.34 holes per Cu site) to 4.6(3)x10 21 cm -3 (0.50 holes per Cu site)

A semimetal model of the normal state magnetic susceptibility and transport properties of Ba(Fe1-xCox)2As2

International Nuclear Information System (INIS)

Sales, B.C.; McGuire, M.A.; Sefat, A.S.; Mandrus, D.

2010-01-01

A simple two-band 3D model of a semimetal is constructed to determine which normal state features of the Ba(Fe 1-x Co x ) 2 As 2 superconductors can be qualitatively understood within this framework. The model is able to account in a semiquantitative fashion for the measured magnetic susceptibility, Hall, and Seebeck data, and the low temperature Sommerfeld coefficient for 0 < x < 0.3 with only three parameters for all x. The purpose of the model is not to fit the data but to provide a simple starting point for thinking about the physics of these interesting materials. Although many of the static magnetic properties, such as the increase of the magnetic susceptibility with temperature, are reproduced by the model, none of the spin-fluctuation dynamics are addressed. A general conclusion from the model is that the magnetic susceptibility of most semimetals should increase with temperatures.

Luminescence spectroscopy of Rb2KTiOF5 oxyfluoride single crystals

Science.gov (United States)

Kozlov, A. V.; Pustovarov, V. A.; Sarychev, M. N.; Isaenko, L. I.

2017-09-01

Spectra of photoluminescence (PL) and X-ray excited luminescence (XRL) in region of 1.5-5.5 eV, PL excitation spectra using synchrotron radiation (3.7-22 eV), time-resolved impulse cathode-luminescence (ICL) spectra, the temperature depending of the XRL, decay kinetics as well as thermoluminescence curves were measured for single crystals Rb2KTiOF5, a promising nonlinear optical material. Single crystals are transparent in microwave, visible and near UV range, inter-band transition energy is Eg = 4.2 eV. Crystalline structure has two disordered mixed position O/F, phase transition in the region of 215 K. All the obtained results indicate that in luminescence spectra nonelementary band 2.2 eV is connected to the emission of self-trapped excitons. Nonelementary band 2.2 eV associated with the presence local distortion in the octahedron TiOF5. It is observed that at interband excitation in VUV region at energies more than 3.5 Eg the effect of multiplication of electronic excitations appears. That determines the high output of XRL and ICL. Luminescence methods of quality control of grown crystals are proposed.

Photon emission by electrons and positrons traversing thin single crystal

International Nuclear Information System (INIS)

Ol'chak, A.S.

1984-01-01

Radiation emission by planar channeled particles (electrons, positrons) in a thin single crystal of thickness L is considered. It is shown that for L approximately πb/THETAsub(L) (b is the lattice constant, THETA sub(L) the Lindhard angle) besides the main spontaneous channeling maxima there exist auxiliary interference maxima, the positions of all the maxima depending on L. The dependence of the radiation spectral intensity on crystal thickness is discussed

Peak effect studies in single crystals CeRu2 and 2H-NbS2

Indian Academy of Sciences (India)

vibrating sample magnetometer (VSM) (Oxford Instruments, UK) on single crystal sam- ples of CeRu2 and 2H-NbS2. All the measurements were carried out by cooling the sample in zero field (ZFC mode) and then by applying the magnetic field. The measurements were carried out with the magnetic field parallel to the cube ...

Specific features of the crystal packing that enable styryl dyes of the pyridine series to undergo the solid-phase [2 + 2] photocycloaddition including the process with single crystal retention

International Nuclear Information System (INIS)

Kuz'mina, L. G.; Vedernikov, A. I.; Sazonov, S. K.; Lobova, N. A.; Loginov, P. S.; Howard, J. A. K.; Alfimov, M. V.; Gromov, S. P.

2008-01-01

The crystal packing of a number of styryl dyes of the pyridine series is analyzed. The structures of three dyes and three [2 + 2] photocycloaddition (PCA) products, 1,2,3,4-tetrasubstituted cyclobutanes, obtained in single crystals are determined by X-ray diffraction. Stacks of planar organic cations are characteristic of styryl dye packings. The proceeding of the PCA reaction as a single crystal-to-single crystal transformation in the syn head-to-head stacks is in principle impossible. The syn head-to-tail stacking packings are favorable for the PCA reactions resulting in the centrosymmetric rctt isomers of cyclobutane. The stacking packings, in which molecules are related by the twofold axes (the anti arrangement of molecules), are also favorable for PCA in single crystals. In this case, the products are the rtct isomers of cyclobutane. The presence of the I - counterions in a packing is a factor impeding the PCA reaction, because the secondary I-H-C bonds increase the rigidity of the crystal lattice. The conditions necessary for proceeding the PCA reactions in styryl dyes as single crystal-to-single crystal processes are as follows: (1) the stacks split into pairs of organic cations (dimers) with the d distances within 4.2 A in a dimer and d exceeding 4.2 A between the dimers; and (2) the dimers are surrounded by flexible shells consisting of anions, solvate molecules, or flexible moieties of the organic cations themselves.

Positron reemission: measurement of thin single crystal W(100) films to be used as transmission moderator or re-moderators

International Nuclear Information System (INIS)

Chen, D.M.; Lynn, K.G.; Pareja, R.; Nielsen, B.

1984-11-01

It has been shown that one can produce thin single crystal W films capable of reemitting positrons at a sufficiently high fraction to be used either as a moderator or as a re-moderator. Both the impurities and the defects could be removed by the appropriate cleaning and annealing procedures, and narrow beam emission could be attained when the films were cleaned. This technique would also be a good method for characterizing defect concentration at interfaces or in thin films

The first pseudo-ternary thiocyanate containing two alkali metals. Synthesis and single-crystal structure of LiK{sub 2}[SCN]{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Reckeweg, Olaf; DiSalvo, Francis J. [Cornell Univ., Ithaca, NY (United States). Baker Lab.

2016-04-01

A procedure was empirically developed to prepare the compound LiK{sub 2}[SCN]{sub 3}, which forms colorless, transparent, very fragile, and extremely hygroscopic thin rectangular plates. Its unique crystal structure was determined by single-crystal X-ray diffraction. LiK{sub 2}[SCN]{sub 3} adopts the orthorhombic space group Pna2{sub 1} (no. 33, Z = 4) with the cell parameters a = 1209.32(9), b = 950.85(9), and c = 849.95(6) pm.

Single-crystal-like GdNdOx thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

Directory of Open Access Journals (Sweden)

Ziwei Wang

2016-06-01

Full Text Available Single-crystal-like rare earth oxide thin films on silicon (Si substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdOx (GNO film was deposited using a high-temperature sputtering process at 500°C. A Gd2O3 and Nd2O3 mixture was used as the sputtering target, in which the proportions of Gd2O3 and Nd2O3 were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

Valence-band and core-level photoemission study of single-crystal Bi2CaSr2Cu2O8 superconductors

International Nuclear Information System (INIS)

Shen, Z.; Lindberg, P.A.P.; Wells, B.O.; Mitzi, D.B.; Lindau, I.; Spicer, W.E.; Kapitulnik, A.

1988-01-01

High-quality single crystals of Bi 2 CaSr 2 Cu 2 O 8 superconductors have been prepared and cleaved in ultrahigh vacuum. Low-energy electron diffraction measurements show that the surface structure is consistent with the bulk crystal structure. Ultraviolet photoemission and x-ray photoemission experiments were performed on these well-characterized sample surfaces. The valence-band and the core-level spectra obtained from the single-crystal surfaces are in agreement with spectra recorded from polycrystalline samples, justifying earlier results from polycrystalline samples. Cu satellites are observed both in the valence band and Cu 2p core level, signaling the strong correlation among the Cu 3d electrons. The O 1s core-level data exhibit a sharp, single peak at 529-eV binding energy without any clear satellite structures

A temperature dependent tunneling study of the spin density wave gap in EuFe2As2 single crystals.

Science.gov (United States)

Dutta, Anirban; Anupam; Hossain, Z; Gupta, Anjan K

2013-09-18

We report temperature dependent scanning tunneling microscopy and spectroscopy measurements on single crystals of EuFe2As2 in the 15-292 K temperature range. The in situ cleaved crystals show atomic terraces with homogeneous tunnel spectra that correlate well with the spin density wave (SDW) transition at a temperature, TSDW ≈ 186 K. Above TSDW the local tunnel spectra show a small depression in the density of states (DOS) near the Fermi energy (EF). The gap becomes more pronounced upon entering the SDW state with a gap value ∼90 meV at 15 K. However, the zero bias conductance remains finite down to 15 K indicating a finite DOS at the EF in the SDW phase. Furthermore, no noticeable change is observed in the DOS at the antiferromagnetic ordering transition of Eu(2+) moments at 19 K.

Single-crystal structure, photophysical characteristics and electroluminescent properties of bis(2-(4-trifluoromethyl-2-hydroxyphenyl)benzothiazolate)zinc

Energy Technology Data Exchange (ETDEWEB)

Xu Huixia, E-mail: xuhuixia0824@163.com [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); Yue, Yan [Department of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Wang Hua [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); Chen Liuqing [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Hao Yuying [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); Department of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Xu Bingshe [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

2012-04-15

In this paper, a zinc (II) complex of Zn{sub 2}(4-tfmBTZ){sub 4} (4-tfmBTZ=2-(4-trifluoromethyl-2-hydroxyphenyl)benzothiazolate) was reported. Via combination of experimental and theoretical approaches, its molecular structure, photophysical characteristics, electronic structure and electroluminescent properties were investigated. The results indicate that Zn{sub 2}(4-tfmBTZ){sub 4} exists as five-coordinate geometric structure and two zinc atoms are bridged by oxygen atoms. The intense absorption band was located at 404 nm, which mainly originate from the transition HOMO-1 to LUMO+2. The blue-light emission was observed in tetrahydrofuran solution and thin film. White-light emission with four emission peaks was observed with CIE coordinate of (0.29, 0.33) and a higher CRI of 85.1 by fabricating bilayer device using Zn{sub 2}(4-tfmBTZ){sub 4} as electron-transport and NPB as hole-transport material. - Highlights: Black-Right-Pointing-Pointer The single-crystal and electronic structures of Zn{sub 2}(4-tfmBTZ){sub 4}. Black-Right-Pointing-Pointer The multicolor emission of Zn{sub 2}(4-tfmBTZ){sub 4} were realized by the simple devices. Black-Right-Pointing-Pointer White OLED is achieved with particularly high color rending index (CRI) by the emission of Zn{sub 2}(4-tfmBTZ){sub 4}.

Crystal structure of new AsS2 compound

International Nuclear Information System (INIS)

Bolotina, N. B.; Brazhkin, V. V.; Dyuzheva, T. I.; Lityagina, L. M.; Kulikova, L. F.; Nikolaev, N. A.; Verin, I. A.

2013-01-01

AsS 2 single crystals have been obtained for the first time from an As 2 S 3 melt at pressures above 6 GPa and temperatures above 800 K in the As 2 S 3 → AsS + AsS 2 reaction. The monoclinic structure of the new high-pressure phase is solved by X-ray diffraction analysis and compared to the structure of high-pressure AsS phase, which was studied previously.

Reversible Single-Crystal-to-Single-Crystal Structural Transformation in a Mixed-Ligand 2D Layered Metal-Organic Framework: Structural Characterization and Sorption Study

Directory of Open Access Journals (Sweden)

Chih-Chieh Wang

2017-12-01

Full Text Available A 3D supramolecular network, [Cd(bipy(C4O4(H2O2]·3H2O (1 (bipy = 4,4′-bipyridine and C4O42− = dianion of H2C4O4, constructed by mixed-ligand two-dimensional (2D metal-organic frameworks (MOFs has been reported and structurally determined by the single-crystal X-ray diffraction method and characterized by other physicochemical methods. In 1, the C4O42− and bipy both act as bridging ligands connecting the Cd(II ions to form a 2D layered MOF, which are then extended to a 3D supramolecular network via the mutually parallel and interpenetrating arrangements among the 2D-layered MOFs. Compound 1 shows a two-step dehydration process with weight losses of 11.0% and 7.3%, corresponding to the weight-loss of three guest and two coordinated water molecules, respectively, and exhibits an interesting reversible single-crystal-to-single-crystal (SCSC structural transformation upon de-hydration and re-hydration for guest water molecules. The SCSC structural transformation have been demonstrated and monitored by single-crystal and X-ray powder diffraction, and thermogravimetic analysis studies.

On dewetting of thin films due to crystallization (crystallization dewetting).

Science.gov (United States)

Habibi, Mehran; Rahimzadeh, Amin; Eslamian, Morteza

2016-03-01

Drying and crystallization of a thin liquid film of an ionic or a similar solution can cause dewetting in the resulting thin solid film. This paper aims at investigating this type of dewetting, herein termed "crystallization dewetting", using PbI2 dissolved in organic solvents as the model solution. PbI2 solid films are usually used in X-ray detection and lead halide perovskite solar cells. In this work, PbI2 films are fabricated using spin coating and the effect of major parameters influencing the crystallization dewetting, including the type of the solvent, solution concentration, drying temperature, spin speed, as well as imposed vibration on the substrate are studied on dewetting, surface profile and coverage, using confocal scanning laser microscopy. Simplified hydrodynamic governing equations of crystallization in thin films are presented and using a mathematical representation of the process, it is phenomenologically demonstrated that crystallization dewetting occurs due to the absorption and consumption of the solution surrounding a growing crystal. Among the results, it is found that a low spin speed (high thickness), a high solution concentration and a low drying temperature promote crystal growth, and therefore crystallization dewetting. It is also shown that imposed vibration on the substrate can affect the crystal size and crystallization dewetting.

Unusually high critical current of P-doped BaFe{sub 2}As{sub 2} single crystalline thin film

Energy Technology Data Exchange (ETDEWEB)

Kurth, Fritz; Engelmann, Jan; Schultz, Ludwig [IMW, IFW Dresden, Dresden (Germany); TU Dresden, Dresden (Germany); Tarantini, Chiara; Jaroszynski, Jan [ASC, NHMFL, Florida (United States); Grinenko, Vadim; Reich, Elke; Huehne, Ruben [IMW, IFW Dresden, Dresden (Germany); Haenisch, Jens [IMW, IFW Dresden, Dresden (Germany); ITEP, KIT, Karlsruhe (Germany); Mori, Yasohiro; Sakagami, Akihiro; Kawaguchi, Takahiko; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Nagoya (Japan); Holzapfel, Bernhard [ITEP, KIT, Karlsruhe (Germany); Iida, Kazumasa [IMW, IFW Dresden, Dresden (Germany); Department of Crystalline Materials Science, Nagoya University, Nagoya (Japan)

2015-07-01

Microstructurally clean, isovalently P-doped BaFe{sub 2}As{sub 2} single crystalline thin films have been prepared by molecular beam epitaxy. These films show a superconducting transition temperature (T{sub c}) of over 30 K and high transport self-field critical current densities (J{sub c}) of over 6 MA/cm{sup 2} at 4.2 K, which are among the highest for Fe based superconductors. In-field J{sub c} exceeds 0.1 MA/cm{sup 2} at μ{sub 0}H = 35 T for H parallel ab and μ{sub 0}H = 18 T for H parallel c, respectively, in spite of moderate upper critical fields compared to other FeSCs with similar T{sub c}. This unusually high J{sub c} makes P-doped Ba-122 very favorable for high-field magnet applications.

Single-Crystal Mesoporous ZnO Thin Films Composed of Nanowalls

KAUST Repository

Wang, Xudong

2009-02-05

This paper presents a controlled, large scale fabrication of mesoporous ZnO thin films. The entire ZnO mesoporous film is one piece of a single crystal, while high porosity made of nanowalls is present. The growth mechanism was proposed in comparison with the growth of ZnO nanowires. The ZnO mesoporous film was successfully applied as a gas sensor. The fabrication and growth analysis of the mesoporous ZnO thin film gi ve general guidance for the controlled growth of nanostructures. It also pro vides a unique structure with a superhigh surface-to-volume ratio for surface-related applications. © 2009 American Chemical Society.

Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

Energy Technology Data Exchange (ETDEWEB)

Kumar, A.; Ravi, K. V.

2011-06-01

In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

Growth and characterization of LiInSe2 single crystals

Science.gov (United States)

Ma, Tianhui; Zhu, Chongqiang; Lei, Zuotao; Yang, Chunhui; Sun, Liang; Zhang, Hongchen

2015-04-01

Large and crack-free LiInSe2 single crystals were obtained by the vertical gradient freezing method with adding a temperature oscillation technology in a two-zone furnace. X-ray diffraction data showed that the pure LiInSe2 compound was synthesized. The grown crystals had different color depending on melt composition. The atomic ratios of elements of LiInSe2 crystals were obtained by an Inductively Coupled Plasma-Atomic Emission Spectrometry (ICP-AES), and the structural formula were calculated according to the relative contents of elements. The average absorption coefficients were estimated by using average reflection indices. The absorption coefficients of the thermal annealing samples are 0.6 cm-1 at 2-3 μm. The transparent range of our LiInSe2 crystals is from 0.6 μm to 13.5 μm.

BaY2F8 single crystals doped with rare-earth ions as promising up-conversion media for UV and VUV lasers

International Nuclear Information System (INIS)

Pushkar', A A; Uvarova, T V; Molchanov, V N

2008-01-01

BaY 2 F 8 crystals are studied as promising active media for UV and VUV lasers. The up-conversion pumping of rare-earth activators is proposed to solve problems related to the solarisation of the medium and the selection of pump sources. The technology of growing oriented BaY 2 F 8 single crystals is developed and the influence of the crystal orientation on the growth rate and quality of single crystals is determined. (active media)

Growth and Properties of Oxygen and Ion Doped BISMUTH(2) STRONTIUM(2) Calcium COPPER(2) Oxygen (8+DELTA) Single Crystals

Science.gov (United States)

Mitzi, David Brian

1990-01-01

A directional solidification method for growing large single crystals in the Bi_2Sr _2CaCu_2O _{8+delta} system is reported. Ion substitutions, with replacement of La for Sr and Y for Ca, as well as oxygen doping in these crystals has been explored. Ion doping results in little change of the superconducting transition for substitution levels below 20-25% (as a result of simultaneous oxygen intercalation), while beyond this level, the Meissner signal broadens and the low temperature Meissner signal decreases. Microprobe analysis and x-ray diffraction performed on these more highly substituted single crystals, provides evidence for inhomogeneity and phase segregation into regions of distinct composition. Annealing unsubstituted crystals in increasing partial pressures of oxygen reversibly depresses the superconducting transition temperature from 90K (as made) to 77K (oxygen pressure annealed) while the Hall concentrations increase from n = 3.1(3) times 10 ^{21} cm^{ -3} (0.34 holes/Cu site) to 4.6(3) times 10^{21} cm^{-3} (0.50 holes/Cu site). Further suppression of T_{c} to 72K is possible by annealing in oxygen pressures up to 100atm. No degradation of the Meissner transition or other indications of inhomogeneity or phase segregation with doping are noted, suggesting that oxygen doped Bi_2Sr _2CaCu_2O _{8+delta} is a suitable system for pursuing doping studies. The decrease in T _{c} with concentration for 0.34 <=q n <=q 0.50 indicates that a high carrier concentration regime exists where T_{c} decreases with n and suggests that this decrease does not arise from material inhomogeneity or other materials problems. The physical properties of these Bi _2Sr_2CaCu _2O_{8+delta} crystals, in this high carrier concentration regime, will be discussed.

Superconductivity and fluctuations in Ba_1_–_pK_pFe_2As_2 and Ba(Fe_1_–_nCo_n)_2As_2

International Nuclear Information System (INIS)

Böhm, T.; Hosseinian Ahangharnejhad, R.; Technical University of Munich, Garching

2016-01-01

In this paper, we study the interplay of fluctuations and superconductivity in BaFe_2As_2 (Ba-122) compounds with Ba and Fe substituted by K (p doping) and Co (n doping), respectively. To this end, we measured electronic Raman spectra as a function of polarization and temperature. We observe gap excitations and fluctuations for all doping levels studied. The response from fluctuations is much stronger for Co substitution and, according to the selection rules and the temperature dependence, originates from the exchange of two critical spin fluctuations with characteristic wave vectors (±π,0) and (0,±π). At 22% K doping (p = 0.22), we find the same selection rules and spectral shape for the fluctuations but the intensity is smaller by a factor of 5. Since there exists no nematic region above the orthorhombic spin-density-wave (SDW) phase, the identification of the fluctuations via the temperature dependence is not possible. The gap excitations in the superconducting state indicate strongly anisotropic near-nodal gaps for Co substitution which make the observation of collective modes difficult. The variation with doping of the spectral weights of the A_1_g and B_1_g gap features does not support the influence of fluctuations on Cooper pairing. Thus, the observation of Bardasis–Schrieffer modes inside the nearly clean gaps on the K-doped side remains the only experimental evidence for the relevance of fluctuations for pairing.

Multifunctional Bi2ZnOB2O6 single crystals for second and third order nonlinear optical applications

International Nuclear Information System (INIS)

Iliopoulos, K.; Kasprowicz, D.; Majchrowski, A.; Michalski, E.; Gindre, D.; Sahraoui, B.

2013-01-01

Bi 2 ZnOB 2 O 6 nonlinear optical single crystals were grown by means of the Kyropoulos method from stoichiometric melt. The second and third harmonic generation (SHG/THG) of Bi 2 ZnOB 2 O 6 crystals were investigated by the SHG/THG Maker fringes technique. Moreover, SHG microscopy studies were carried out providing two-dimensional SHG images as a function of the incident laser polarization. The high nonlinear optical efficiency combined with the possibility to grow high quality crystals make Bi 2 ZnOB 2 O 6 an excellent candidate for photonic applications

Transition to collapsed tetragonal phase in CaFe2As2 single crystals as seen by 57Fe Mössbauer spectroscopy

Science.gov (United States)

Bud'ko, Sergey L.; Ma, Xiaoming; Tomić, Milan; Ran, Sheng; Valentí, Roser; Canfield, Paul C.

2016-01-01

Temperature dependent measurements of 57Fe Mössbauer spectra on CaFe2As2 single crystals in the tetragonal and collapsed tetragonal phases are reported. Clear features in the temperature dependencies of the isomer shift, relative spectra area, and quadrupole splitting are observed at the transition from the tetragonal to the collapsed tetragonal phase. From the temperature dependent isomer shift and spectral area data, an average stiffening of the phonon modes in the collapsed tetragonal phase is inferred. The quadrupole splitting increases by ˜25 % on cooling from room temperature to ˜100 K in the tetragonal phase and is only weakly temperature dependent at low temperatures in the collapsed tetragonal phase, in agreement with the anisotropic thermal expansion in this material. In order to gain microscopic insight about these measurements, we perform ab initio density functional theory calculations of the electric field gradient and the electron density of CaFe2As2 in both phases. By comparing the experimental data with the calculations we are able to fully characterize the crystal structure of the samples in the collapsed-tetragonal phase through determination of the As z coordinate. Based on the obtained temperature dependent structural data we are able to propose charge saturation of the Fe-As bond region as the mechanism behind the stabilization of the collapsed-tetragonal phase at ambient pressure.

Low-leakage superconducting tunnel junctions with a single-crystal Al{sub 2}O{sub 3} barrier

Energy Technology Data Exchange (ETDEWEB)

Oh, S [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Department of Physics, University of Illinois, Urbana, IL 61801 (United States); Cicak, K; Osborn, K D; Simmonds, R W; Pappas, D P [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, R; Cooper, K B; Steffen, M; Martinis, J M [University of California, Santa Barbara, CA 93106 (United States)

2005-10-01

We have developed a two-step growth scheme for single-crystal Al{sub 2}O{sub 3} tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al{sub 2}O{sub 3} layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al{sub 2}O{sub 3} junction may open a new venue for coherent quantum devices.

Growth from the melt of high-quality In2O3 and Ga2O3 single crystals

Energy Technology Data Exchange (ETDEWEB)

Fornari, Roberto; Galazka, Zbigniew; Uecker, Reinhard; Irmscher, Klaus [Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin (Germany)

2013-07-01

Because of their interesting properties semiconducting oxides, in particular Ga{sub 2}O{sub 3} In{sub 2}O{sub 3}, have recently received much attention. However, as they were deposited as films on hetero-substrates their quality was quite poor. The growth of high-quality bulk Ga{sub 2}O{sub 3} and In{sub 2}O{sub 3} and manufacture of the corresponding substrates can allow the deposition of high-quality epilayers with lower residual carrier density and fewer extended defects. For this reason IKZ has undertaken an effort to grow large single crystals of these oxide compounds from the melt. Transparent semiconducting Ga{sub 2}O{sub 3} single crystals with diameter of about 20 mm and 50-60 mm long were grown by the Czochralski method along the b-axis, using an Iridium crucible and a dynamic protective atmosphere to minimize the dissociation of Ga{sub 2}O{sub 3} melt and ingot. In the case of In{sub 2}O{sub 3} the Czochralski technique is not applicable and it was necessary to develop a novel melt growth method. This new method indeed supplied crystals from which oriented substrates could be prepared. In this presentation the melt growth of Ga{sub 2}O{sub 3} and In{sub 2}O{sub 3} single crystals will be reviewed. An important feature of both materials is given by their strong sensitivity to thermal processing: the free carrier concentration and the absorption spectra drastically vary as a function of annealing temperature, duration and ambient. The possible causes are discussed.

Optical characteristics of BaGa2S4:Ho3+ and BaGa2Se4:Ho3+ single crystals

International Nuclear Information System (INIS)

Choe, Sung-Hyu; Jin, Moon-Seog; Kim, Wha-Tek

2005-01-01

BaGa 2 S 4 , BaGa 2 S 4 :Ho 3+ , BaGa 2 Se 4 , and BaGa 2 Se 4 :Ho 3+ single crystals were grown by using the chemical transport reaction method. The optical energy gaps of the single crystals were investigated in the temperature region from 11 K to 300 K. The temperature dependence of the optical energy gap was well fitted by the Varshni equation. Two broad emission bands were observed in the photoluminescence spectra of the single crystals. These bands were attributed to donor-acceptor pair recombinations. Sharp emission peaks were observed in the BaGa 2 S 4 :Ho 3+ and the BaGa 2 Se 4 :Ho 3+ single crystals and were assigned to radiation recombination between split Stark levels of Ho 3+ .

Effects of post-annealing and cobalt co-doping on superconducting properties of (Ca,Pr)Fe{sub 2}As{sub 2} single crystals

Energy Technology Data Exchange (ETDEWEB)

Okada, T., E-mail: 8781303601@mail.ecc.u-tokyo.ac.jp; Ogino, H.; Yakita, H.; Yamamoto, A.; Kishio, K.; Shimoyama, J.

2014-10-15

Highlights: • Post-annealing at 400 °C killed superconductivity for Co-free sample. • Pr,Co co-doped samples maintained superconductivity even after annealing. • Two-step superconducting transition was observed via magnetization measurement. • Bulk superconductivity of low-T{sub c} component was confirmed. • Superconducting volume fraction of high-T{sub c} component was always small. - Abstract: In order to clarify the origin of anomalous superconductivity in (Ca,RE)Fe{sub 2}As{sub 2} system, Pr doped and Pr,Co co-doped CaFe{sub 2}As{sub 2} single crystals were grown by the FeAs flux method. These samples showed two-step superconducting transition with T{sub c1} = 25–42 K, and T{sub c2} < 16 K, suggesting that (Ca,RE)Fe{sub 2}As{sub 2} system has two superconducting components. Post-annealing performed for these crystals in evacuated quartz ampoules at various temperatures revealed that post-annealing at ∼400 °C increased the c-axis length for all samples. This indicates that as-grown crystals have a certain level of strain, which is released by post-annealing at ∼400 °C. Superconducting properties also changed dramatically by post-annealing. After annealing at 400 °C, some of the co-doped samples showed large superconducting volume fraction corresponding to the perfect diamagnetism below T{sub c2} and high J{sub c} values of 10{sup 4}–10{sup 5} A cm{sup −2} at 2 K in low field, indicating the bulk superconductivity of (Ca,RE)Fe{sub 2}As{sub 2} phase occurred below T{sub c2}. On the contrary, the superconducting volume fraction above T{sub c2} was always very small, suggesting that 40 K-class superconductivity observed in this system is originating in the local superconductivity in the crystal.

Tracer diffusion studies of 26Mg, 30Si and 18O in single crystal forsterite (Mg2SiO4) and of 18O in single crystal SiO2

International Nuclear Information System (INIS)

Schachtner, R.

1981-01-01

Tracer diffusion coefficients of Mg, Si and O in monocrystalline forsterite were determined by Sims as a function of temperature and crystal orientation. Former results on oxygen diffusion in SiO 2 single crystals using nuclear activation methods were confirmed by Sims data. The influence of crystal defects and impurities is discussed. (TW)

Quasi van der Waals epitaxy of copper thin film on single-crystal graphene monolayer buffer

Science.gov (United States)

Lu, Zonghuan; Sun, Xin; Washington, Morris A.; Lu, Toh-Ming

2018-03-01

Quasi van der Waals epitaxial growth of face-centered cubic Cu (~100 nm) thin films on single-crystal monolayer graphene is demonstrated using thermal evaporation at an elevated substrate temperature of 250 °C. The single-crystal graphene was transferred to amorphous (glass) and crystalline (quartz) SiO2 substrates for epitaxy study. Raman analysis showed that the thermal evaporation method had minimal damage to the graphene lattice during the Cu deposition. X-ray diffraction and electron backscatter diffraction analyses revealed that both Cu films are single-crystal with (1 1 1) out-of-plane orientation and in-plane Σ3 twin domains of 60° rotation. The crystallinity of the SiO2 substrates has a negligible effect on the Cu crystal orientation during the epitaxial growth, implying the strong screening effect of graphene. We also demonstrate the epitaxial growth of polycrystalline Cu on a commercial polycrystalline monolayer graphene consisting of two orientation domains offset 30° to each other. It confirms that the crystal orientation of the epitaxial Cu film follows that of graphene, i.e. the Cu film consists of two orientation domains offset 30° to each other when deposited on polycrystalline graphene. Finally, on the contrary to the report in the literature, we show that the direct current and radio frequency flip sputtering method causes significant damage to the graphene lattice during the Cu deposition process, and therefore neither is a suitable method for Cu epitaxial growth on graphene.

Structural and optical properties of WTe2 single crystals synthesized by DVT technique

Science.gov (United States)

Dixit, Vijay; Vyas, Chirag; Pathak, V. M.; Soalanki, G. K.; Patel, K. D.

2018-05-01

Layered transition metal di-chalcogenide (LTMDCs) crystals have attracted much attention due to their potential in optoelectronic device applications recently due to realization of their monolayer based structures. In the present investigation we report growth of WTe2 single crystals by direct vapor transport (DVT) technique. These crystals are then characterized by energy dispersive analysis of x-rays (EDAX) to study stoichiometric composition after growth. The structural properties are studied by x-ray diffraction (XRD) and selected area electron diffraction (SAED) is used to confirm orthorhombic structure of grown WTe2 crystal. Surface morphological properties of the crystals are also studied by scanning electron microscope (SEM). The optical properties of the grown crystals are studied by UV-Visible spectroscopy which gives direct band gap of 1.44 eV for grown WTe2 single crystals.

ACRT technique for the single crystal growth of the heavy fermion compound YbRh{sub 2}Si{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Witt, Sebastian; Kliemt, Kristin; Butzke, Constantin; Krellner, Cornelius [Goethe University Frankfurt, 60438 Frankfurt am Main (Germany)

2016-07-01

In the heavy fermion compound YbRh{sub 2}Si{sub 2} the antiferromagnetic ordering below 70 mK close to a quantum critical point is well-studied. Beneath the magnetic ordering a new phase transition was found recently at 2 mK. It is necessary to prepare large and high-quality single crystals for studying the nature of this new phase transition. Besides the optimization of the single crystal growth it is important to investigate single crystals with different isotopes at this phase transition. Here, we report the crystal growth of YbRh{sub 2}Si{sub 2} with the accelerated crucible rotation technique (ACRT). ACRT shows for other compounds, e.g. YAG (yttrium aluminum garnet, Y{sub 3}Al{sub 5}O{sub 12}), that this technique can reduce flux impurities and enhance the yield of larger crystals. We also report the attempt to receive metallic isotopes of ytterbium with metallothermic reduction. Crystals with different isotopes of silicon and ytterbium can be used for NMR measurements to investigate the underlying phenomena of quantum criticality in more detail.

Raman scattering spectra of superconducting Bi2Sr2CaCu2O8 single crystals

International Nuclear Information System (INIS)

Kirillov, D.; Bozovic, I.; Geballe, T.H.; Kapitulnik, A.; Mitzi, D.B.

1988-01-01

Raman spectra of Bi 2 Sr 2 CaCu 2 O 8 single crystals with superconducting phase-transition temperature of 90 K have been studied. The spectra contained phonon lines and electronic continuum. Phonon energies and polarization selection rules were measured. A gap in the electronic continuum spectrum was observed in a superconducting state. Noticeable similarity between Raman spectra of Bi 2 Sr 2 CaCu 2 O 8 and YBa 2 Cu 3 O 7 was found

Raman scattering spectra of superconducting Bi2Sr2CaCu2O8 single crystals

Science.gov (United States)

Kirillov, D.; Bozovic, I.; Geballe, T. H.; Kapitulnik, A.; Mitzi, D. B.

1988-12-01

Raman spectra of Bi2Sr2CaCu2O8 single crystals with superconducting phase-transition temperature of 90 K have been studied. The spectra contained phonon lines and electronic continuum. Phonon energies and polarization selection rules were measured. A gap in the electronic continuum spectrum was observed in a superconducting state. Noticeable similarity between Raman spectra of Bi2Sr2CaCu2O8 and YBa2Cu3O7 was found.

Elastic neutron diffraction study of transforming and non-transforming single crystal ZrV2

International Nuclear Information System (INIS)

Bostock, J.; Wong, M.; MacVicar, M.L.A.; Levinson, M.

1980-01-01

The mosaic spread of single crystal ZrV 2 is unusually narrow, approx. 1' from room temperature to 130K. For non-transforming perfect single crystal the mosaic gradually increases to approx. 1.86' at 4.2K; for transforming, twinned single crystal the room temperature mosaic is maintained to 110K, then increases to 2.76' at 94K when the crystal transforms to a mixed cubic (30%) and rhombohedral state (70%). The onset of the electronic instability (approx. 100K) is accompanied by an increase in diffuse scattering background which, for the twinned crystal, peaks at the structural transformation. The electronic instability coupled to the localized lattice stress appears to be the driving mechanism for the transformation

A 350 mK, 9 T scanning tunneling microscope for the study of superconducting thin films on insulating substrates and single crystals.

Science.gov (United States)

Kamlapure, Anand; Saraswat, Garima; Ganguli, Somesh Chandra; Bagwe, Vivas; Raychaudhuri, Pratap; Pai, Subash P

2013-12-01

We report the construction and performance of a low temperature, high field scanning tunneling microscope (STM) operating down to 350 mK and in magnetic fields up to 9 T, with thin film deposition and in situ single crystal cleaving capabilities. The main focus lies on the simple design of STM head and a sample holder design that allows us to get spectroscopic data on superconducting thin films grown in situ on insulating substrates. Other design details on sample transport, sample preparation chamber, and vibration isolation schemes are also described. We demonstrate the capability of our instrument through the atomic resolution imaging and spectroscopy on NbSe2 single crystal and spectroscopic maps obtained on homogeneously disordered NbN thin film.

A multistep single-crystal-to-single-crystal bromodiacetylene dimerization

Science.gov (United States)

Hoheisel, Tobias N.; Schrettl, Stephen; Marty, Roman; Todorova, Tanya K.; Corminboeuf, Clémence; Sienkiewicz, Andrzej; Scopelliti, Rosario; Schweizer, W. Bernd; Frauenrath, Holger

2013-04-01

Packing constraints and precise placement of functional groups are the reason that organic molecules in the crystalline state often display unusual physical or chemical properties not observed in solution. Here we report a single-crystal-to-single-crystal dimerization of a bromodiacetylene that involves unusually large atom displacements as well as the cleavage and formation of several bonds. Density functional theory computations support a mechanism in which the dimerization is initiated by a [2 + 1] photocycloaddition favoured by the nature of carbon-carbon short contacts in the crystal structure. The reaction proceeded up to the theoretical degree of conversion without loss of crystallinity, and it was also performed on a preparative scale with good yield. Moreover, it represents the first synthetic pathway to (E)-1,2-dibromo-1,2-diethynylethenes, which could serve as synthetic intermediates for the preparation of molecular carbon scaffolds. Our findings both extend the scope of single-crystal-to-single-crystal reactions and highlight their potential as a synthetic tool for complex transformations.

Low-temperature specific heat of single-crystal Bi2CaSr2Cu2O8 and Tl2Ca2Ba2Cu3O10

Science.gov (United States)

Urbach, J. S.; Mitzi, D. B.; Kapitulnik, A.; Wei, J. Y. T.; Morris, D. E.

1989-06-01

We report specific-heat measurements from 2 to 15 K on single crystals of Bi2CaSr2Cu2O8 and Tl2Ca2Ba2Cu3O10 We find low-temperature deviations from the Debye law that can be attributed to spin-glass behavior of a small concentration of isolated impurity copper moments. At higher temperatures, we observe contributions to the specific heat that can be attributed to a soft-phonon mode, possibly associated with the superstructure in the Bi-O and Tl-O layers. From our single-crystal data, we conclude that the thallium- and bismuth-based copper oxide superconductors show no measurable linear term in the specific heat [γ(0)<=1 mJ/mole K2].

Electrical resistivity anisotropy of osmium single crystals in the range 4,2 to 300 K

International Nuclear Information System (INIS)

Volkenshtejn, N.V.; Dyakina, V.P.; Dyakin, V.V.; Startsev, V.E.; Cherepanov, V.I.; Azhazha, V.M.; Kovtun, G.P.; Elenskij, V.A.; AN Ukrainskoj SSR, Kharkov. Fiziko-Tekhnicheskij Inst.)

1981-01-01

Electrical resistivity and size effect anisotropies of pure osmium single crystals with rhosub(273.2/rhosub(4.2)2600 were investigated in the temperature range 4.2 to 300 K. It is found that the electrical resistivity anisotropy (αT)=rhosub( )/rhosub( ) is less than unit and has a maximum at T approximately 50 K; the size effect anisotropy (rho1)sub( )/(rho1)sub( ) is 0.39+-0.07 at T=4.2 K; at liquid helium temperature, the dependence of thin samples is controlled by the scattering of conduction electrons by the surface of the sample. The results are discussed for the specific shape of the Fermi surface geometry of osmium with an account for the scattering processes of conduction electrons by phonons and by surface of the sample

Organic field-effect transistors using single crystals

International Nuclear Information System (INIS)

Hasegawa, Tatsuo; Takeya, Jun

2009-01-01

Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps. (topical review)

Structural and magnetic properties of SiO2–CaO–Na2O–P2O5 containing BaO–Fe2O3 glass–ceramics

International Nuclear Information System (INIS)

Leenakul, W.; Kantha, P.; Pisitpipathsin, N.; Rujijanagul, G.; Eitssayeam, S.; Pengpat, K.

2013-01-01

The incorporation method was employed to produce bioactive glass–ceramics from the BaFe 12 O 19 –SiO 2 –CaO–Na 2 O–P 2 O 5 glass system. The ferrimagnetic BaFe 12 O 19 was first prepared using a simple mixed oxide method, where the oxide precursors of 45S5 bioglass were initially mixed and then melted to form glass. The devitrification of Na 3 Ca 6 (PO 4 ) 5 and Fe 3 O 4 was observed in all of the quenched glass samples. The glass samples were then subjected to a heat treatment schedule for further crystallization. It was found that the small traces of BaFe 12 O 19 phases started to crystallize in high BF content samples of 20 and 40 wt%. These samples also exhibited good magnetic properties comparable to that of other magnetic glass–ceramics. The bioactivity of the BF glass–ceramics improved with increasing BF content as was evident by the formation of bone-like apatite layers on the surface of all of the glass–ceramics after soaking in SBF for 14 days. The results support the use of these bioactive glass–ceramics for hyperthermia treatment within the human body. - Highlights: ►BF addition improves the magnetic property and bioactivity of 45S5 bioglasses.►Bioglass-ceramics exhibited soft magnetic properties with Mr=14.850 emu/g.►Magnetic property can be enhanced by crystallization of BF in 45S5 bioglasses.

Velocities of dislocation groups in very thin neutron-irradiated copper single crystals measured by slip line cinematography

Energy Technology Data Exchange (ETDEWEB)

Potthoff, H.H. (Technische Univ. Braunschweig (Germany, F.R.). Inst. fuer Metallphysik und Nukleare Festkoerperphysik)

1983-05-16

Slip line development on very thin flat single crystals of neutron-irradiated Cu (thickness down to only 15 to 20 ..mu..m, orientation for single glide, yield region, room temperature) is recorded by high-speed cinematography during tensile deformation. In such very thin crystals glide dislocations on the slip plane must be arranged in a rather simple way. Drops in tensile load occuring during initiation of single slip lines at the Lueders band front indicate that in the beginning of a slip line development dislocation groups traverse the whole glide plane in very short times. Evaluating the data measured for the slip line growth v/sub s/ >= 10 cm/s is found for screw dislocations and v/sub e/ >= v/sub s/ for edge dislocations. For later stages on thin crystals and for all stages on thick crystals (>= several 100 ..mu..m) slip line development is much slower and slip line show many cross slip events which then appear to control the mean velocity of the dislocations.

2-nitrobenzohydrazide as a potent urease inhibitor: synthesis, characterization and single crystal x-ray diffraction analysis

International Nuclear Information System (INIS)

Abbas, N.; Khan, I.; Hameed, S.; Batool, S.

2018-01-01

2-Nitrobenzohydrazide was efficiently synthesized in two steps by the esterification of 2-nitrobenzoic acid followed by the treatment with hydrazine hydrate in methanol. The structure of 2-nitrobenzohydrazide was established by modern spectro-analytical techniques including FTIR, 1H and 13C-NMR spectroscopy and unequivocally confirmed by single crystal X-ray diffraction data. 2-Nitrobenzohydrazide crystallized in orthorhombic space group P 21 21 21 with unit cell dimensions a = 4.9764(4) Å, b = 12.5280 (3) Å, c = 12.8512(1) Å, α = β = γ = 90°. A combination of N‒H…N and N‒H…O hydrogen bonds stabilized the crystal packing of 3. The synthesized compound 3 was assessed as urease inhibitor against Jack bean urease and the results revealed good inhibitory potency with an IC50 value of 4.25 ± 0.08 µM. This inhibition strength was 5-fold higher compared to the reference inhibitor thiourea (IC50 = 21.00 ± 0.11 µM). The molecular docking studies of the synthesized inhibitor 3 inside the active pocket of urease revealed several important binding interactions. (author)

Low-temperature specific heat of single-crystal Bi2CaSr2Cu2O8 and Tl2Ca2Ba2Cu3O10

International Nuclear Information System (INIS)

Urbach, J.S.; Mitzi, D.B.; Kapitulnik, A.; Wei, J.Y.T.; Morris, D.E.; Physics Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720)

1989-01-01

We report specific-heat measurements from 2 to 15 K on single crystals of Bi 2 CaSr 2 Cu 2 O 8 and Tl 2 Ca 2 Ba 2 Cu 3 O 10 We find low-temperature deviations from the Debye law that can be attributed to spin-glass behavior of a small concentration of isolated impurity copper moments. At higher temperatures, we observe contributions to the specific heat that can be attributed to a soft-phonon mode, possibly associated with the superstructure in the Bi-O and Tl-O layers. From our single-crystal data, we conclude that the thallium- and bismuth-based copper oxide superconductors show no measurable linear term in the specific heat [γ(0) less than or equal to 1 mJ/mole K 2

Optical Properties of the Fresnoite Ba2TiSi2O8 Single Crystal

Directory of Open Access Journals (Sweden)

Chuanying Shen

2017-02-01

Full Text Available In this work, using large-sized single crystals of high optical quality, the optical properties of Ba2TiSi2O8 were systematically investigated, including transmission spectra, refractive indices and nonlinear absorption properties. The crystal exhibits a high transmittance (>84% over a wide wavelength range from 340 to 2500 nm. The refractive indices in the range from 0.31256 to 1.01398 μm were measured, and Sellmeier’s equations were fitted by the least squares method. The nonlinear absorption properties were studied by using the open-aperture Z-scan technique, with a nonlinear absorption coefficient measured to be on the order of 0.257 cm/GW at the peak power density of 16.4 GW/cm2. Such high transmittance and wide transparency indicate that optical devices using the Ba2TiSi2O8crystal can be applied over a wide wavelength range. Furthermore, the small nonlinear absorption observed in Ba2TiSi2O8 will effectively increase the optical conversion efficiency, decreasing the generation of laser damage of the optical device.

Crystal structures of CCa2CuO5 and CSr1.9Ca1.1Cu2O7 refined from single crystal data

International Nuclear Information System (INIS)

Kopnin, E.M.; Matveev, A.T.; Salamakha, P.S.; Sato, A.; Takayama-Muromachi, E.

2003-01-01

Single crystals were grown for new layered oxycarbonates CCa 2 CuO 5 and CSr 1.9 Ca 1.1 Cu 2 O 7 at 6 GPa using a belt-type apparatus. Their crystal structures were determined using single crystal X-ray diffraction data with R1(wR2)=0.0294(0.0659) and 0.0199(0.0457) for CCa 2 CuO 5 and CSr 1.9 Ca 1.1 Cu 2 O 7 , respectively. These phases crystallize in the space group P4/mmm (No. 123), Z=1 with a=3.8157(1) Angst, c=7.1426(3) Angst for CCa 2 CuO 5 and a=3.8753(1) Angst, c=10.6765(5) Angst for CSr 1.9 Ca 1.1 Cu 2 O 7 . In contrast to CSr 2 CuO 5 , no ordering in the orientation of the triangular CO 3 groups was revealed in CCa 2 CuO 5 and CSr 1.9 Ca 1.1 Cu 2 O 7

High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

Science.gov (United States)

Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

2016-11-02

Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

International Nuclear Information System (INIS)

Renteria, J.; Jiang, C.; Yan, Z.; Samnakay, R.; Goli, P.; Pope, T. R.; Salguero, T. T.; Wickramaratne, D.; Lake, R. K.; Khitun, A. G.; Balandin, A. A.

2014-01-01

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe 2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe 2 –Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials

All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

Science.gov (United States)

Renteria, J.; Samnakay, R.; Jiang, C.; Pope, T. R.; Goli, P.; Yan, Z.; Wickramaratne, D.; Salguero, T. T.; Khitun, A. G.; Lake, R. K.; Balandin, A. A.

2014-01-01

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2-Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor

International Nuclear Information System (INIS)

Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B.

2014-01-01

We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO 2 gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm 2 /V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO 2 layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor

Electrically Anisotropic Layered Perovskite Single Crystal

KAUST Repository

Li, Ting-You

2016-04-01

Organic-inorganic hybrid perovskites (OIHPs), which are promising materials for electronic and optoelectronic applications (1-10), have made into layered organic-inorganic hybrid perovskites (LOIHPs). These LOIHPs have been applied to thin-film transistors, solar cells and tunable wavelength phosphors (11-18). It is known that devices fabricated with single crystal exhibit the superior performance, which makes the growth of large-sized single crystals critical for future device applications (19-23). However, the difficulty in growing large-sized LOIHPs single crystal with superior electrical properties limits their practical applications. Here, we report a method to grow the centimeter-scaled LOIHP single crystal of [(HOC2H4NH3)2PbI4], demonstrating the potentials in mass production. After that, we reveal anisotropic electrical and optoelectronic properties which proved the carrier propagating along inorganic framework. The carrier mobility of in-inorganic-plane (in-plane) devices shows the average value of 45 cm2 V–1 s–1 which is about 100 times greater than the record of LOIHP devices (15), showing the importance of single crystal in device application. Moreover, the LOIHP single crystals show its ultra-short carrier lifetime of 42.7 ps and photoluminescence quantum efficiency (PLQE) of 25.4 %. We expect this report to be a start of LOIHPs for advanced applications in which the anisotropic properties are needed (24-25), and meets the demand of high-speed applications and fast-response applications.

Structure of cleaved (001) USb2 single crystal

Energy Technology Data Exchange (ETDEWEB)

Chen, Shao-ping [Los Alamos National Laboratory; Hawley, Marilyn [Los Alamos National Laboratory; Bauer, Eric D [Los Alamos National Laboratory; Stockum, Phil B [STANFORD UNIV.; Manoharan, Hari C [STANFORD UNIV

2009-01-01

We have achieved what we believe to be the first atomic resolution STM images for a uranium compound taken at room temperature. The a, b, and c lattice parameters in the images confirm that the USb{sub 2} crystals cleave on the (001) basal plane as expected. The a and b dimensions were equal, with the atoms arranged in a cubic pattern. Our calculations indicate a symmetric cut between Sb planes to be the most favorable cleavage plane and U atoms to be responsible for most of the DOS measured by STM. Some strange features observed in the STM will be discussed in conjunction with ab initio calculations. The purpose of this work is to demonstrate the power of scanning tunneling microscopy (STM) techniques combined with a theoretical underpinning to determine the surface atomic structure and properties of actinide materials, such as the quasi 2-dimensional uranium dipnictide USb{sub 2} single crystal, thereby contributing to the understanding of their surface structural and electronic properties. The members of this interesting UX{sub 2} (X=P, As, Sb, Bi) series of compounds display dual localized and itinerant 5f electron behavior within the same compound due to the hybridization of the 5f orbitals with the conduction band. With the exception of UO{sub 2}, which has to be studied at elevated temperature to generate enough carriers for STM imaging, STM techniques have not been applied successfully to the characterization of the surface atomic structure of any other single crystal actinide compound, to the best of our knowledge. However, STM has been used to a limited extent for the study of some cerium compounds. STM probes electronic properties at the atomic level and can directly provide information about the local density of filled and empty states (LDOS) states simultaneously. A STM topograph provides the local atomic arrangement and spacing of the atoms on the surface, local defect structures (e.g. steps, vacancies, and kink sites) and the presence of contaminants

Measurement of the anisotropy ratios in MgB2 single crystals

International Nuclear Information System (INIS)

Kim, Heon-Jung; Kang, Byeongwon; Lee, Hyun-Sook; Lee, Sung-Ik

2006-01-01

We present our recent measurements on the anisotropy ratios of MgB 2 single crystals. Our measurements indicate that the anisotropy ratios of the penetration depth and of the upper critical field have different magnitudes and temperature dependences, as predicted by theoretical calculations. These results imply that the two-gap nature can strongly influence the superconducting properties of MgB 2

Growth and properties of oxygen- and ion-doped Bi2Sr2CaCu2O8+δ single crystals

Science.gov (United States)

Mitzi, D. B.; Lombardo, L. W.; Kapitulnik, A.; Laderman, S. S.; Jacowitz, R. D.

1990-04-01

A directional solidification method for growing large single crystals in the Bi2Sr2CaCu2O8+δ system is reported. Ion doping, with replacement of La for Sr and Y for Ca, as well as oxygen doping in these crystals has been explored. Doped and undoped crystals have been characterized using microprobe analysis, x-ray diffraction, thermogravimetric analysis, and magnetic and Hall measurements. Ion doping results in little change of the superconducting transition for substitution levels below 20-25%, while beyond this level the Meissner signal broadens and the low-temperature Meissner signal decreases. Microprobe analysis and x-ray diffraction performed on these more highly substituted single crystals provide evidence for inhomogeneity and phase segregation into regions of distinct composition. Annealing unsubstituted crystals in increasing partial pressures of oxygen reversibly depresses the superconducting transition temperature from 90 (as made) to 77 K (oxygen pressure annealed), while the carrier concentrations, as determined from Hall effect measurements, increase from n=3.1(3)×1021 cm-3 (0.34 holes per Cu site) to 4.6(3)×1021 cm-3 (0.50 holes per Cu site). No degradation of the Meissner transition or other indications of inhomogeneity or phase segregation with doping are noted, suggesting that oxygen-doped Bi2Sr2CaCu2O8+δ is a suitable system for pursuing doping studies. The decrease in Tc with concentration for 0.34<=n<=0.50 indicates that a high-carrier-concentration regime exists in which Tc decreases with n and suggests that this decrease does not arise from material inhomogeneity or other materials problems. An examination of the variation of Tc with the density of states and lattice constants for all of the doped and undoped superconducting samples considered here indicates that changes in Tc with doping are primarily affected by changes in the density of states (or carrier concentration) rather than by structural variation induced by the doping.

Bulk crystal growth and their effective third order nonlinear optical properties of 2-(4-fluorobenzylidene) malononitrile (FBM) single crystal

Science.gov (United States)

Priyadharshini, A.; Kalainathan, S.

2018-04-01

2-(4-fluorobenzylidene) malononitrile (FBM), an organic third order nonlinear (TONLO) single crystal with the dimensions of 32 × 7 × 11 mm3, has been successfully grown in acetone solution by slow evaporation technique at 35 °C. The crystal system (triclinic), space group (P-1) and crystalline purity of the titular crystal were measured by single crystal and powder X-ray diffraction, respectively. The molecular weight and the multiple functional groups of the FBM material were confirmed through the mass and FT-IR spectral analysis. UV-Vis-NIR spectral study enroles that the FBM crystal exhibits excellent transparency (83%) in the entire visible and near infra-red region with a wide bandgap 2.90 eV. The low dielectric constant (εr) value of FBM crystal is appreciable for microelectronics industry applications. Thermal stability and melting point (130.09 °C) were ascertained by TGA-DSC analysis. The laser-induced surface damage threshold (LDT) value of FBM specimen is found to be 2.14 GW/cm2, it is fairly good compared to other reported NLO crystals. The third - order nonlinear optical character of the FBM crystal was confirmed through the typical single beam Z-scan technique. All these finding authorized that the organic crystal of FBM is favorably suitable for NLO applications.

CsPb2Br5 Single Crystals: Synthesis and Characterization

KAUST Repository

Dursun, Ibrahim

2017-08-02

CsPb2Br5 is a ternary halogen-plumbate material with close characteristics to well-reported halide perovskites. Due to its unconventional two-dimensional structure, CsPb2Br5 is being looked at broadly for potential applications in optoelectronics. CsPb2Br5 investigations are currently limited to nanostructures and powder forms of the material, which present unclear and conflicting optical properties. In this study, we present the synthesis and characterization of CsPb2Br5 bulk single crystals, which enabled us to finally clarify the material\\'s optical features. Our CsPb2Br5 crystal has a two-dimensional structure with Pb2Br5- layers spaced by Cs+ cations, and exhibits a ~3.1 eV indirect bandgap with no emission in the visible spectrum.

Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

Energy Technology Data Exchange (ETDEWEB)

Wang, Ziwei; Xiao, Lei; Liang, Renrong, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn; Shen, Shanshan; Xu, Jun; Wang, Jing, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn [Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

2016-06-15

Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

Velocities of dislocation groups in very thin neutron-irradiated copper single crystals measured by slip line cinematography

International Nuclear Information System (INIS)

Potthoff, H.H.

1983-01-01

Slip line development on very thin flat single crystals of neutron-irradiated Cu (thickness down to only 15 to 20 μm, orientation for single glide, yield region, room temperature) is recorded by high-speed cinematography during tensile deformation. In such very thin crystals glide dislocations on the slip plane must be arranged in a rather simple way. Drops in tensile load occuring during initiation of single slip lines at the Lueders band front indicate that in the beginning of a slip line development dislocation groups traverse the whole glide plane in very short times. Evaluating the data measured for the slip line growth v/sub s/ >= 10 cm/s is found for screw dislocations and v/sub e/ >= v/sub s/ for edge dislocations. For later stages on thin crystals and for all stages on thick crystals (>= several 100 μm) slip line development is much slower and slip line show many cross slip events which then appear to control the mean velocity of the dislocations. (author)

Single crystal growth, electronic structure and optical properties of Cs2HgBr4

Science.gov (United States)

Lavrentyev, A. A.; Gabrelian, B. V.; Vu, V. T.; Shkumat, P. N.; Parasyuk, O. V.; Fedorchuk, A. O.; Khyzhun, O. Y.

2015-10-01

We report on successful synthesis of high-quality single crystal of cesium mercury tetrabromide, Cs2HgBr4, by using the vertical Bridgman-Stockbarger method as well as on studies of its electronic structure. For the Cs2HgBr4 crystal, we have recorded X-ray photoelectron spectra for both pristine and Ar+ ion-bombarded surfaces. Our data indicate that the Cs2HgBr4 single crystal surface is rather sensitive with respect to Ar+ ion-bombardment. In particular, such a treatment of the Cs2HgBr4 single crystal surface alters its elemental stoichiometry. To explore peculiarities of the energy distribution of total and partial densities of states within the valence band and the conduction band of Cs2HgBr4, we have made band-structure calculations based on density functional theory (DFT) employing the augmented plane wave+local orbitals (APW+lo) method as incorporated in the WIEN2k package. The APW+lo calculations allow for concluding that the Br 4p states make the major contributions in the upper portion of the valence band, while its lower portion is dominated by contributors of the Hg 5d and Cs 5p states. Further, the main contributors to the bottom of the conduction band of Cs2HgBr4 are the unoccupied Br p and Hg s states. In addition, main optical characteristics of Cs2HgBr4 such as dispersion of the absorption coefficient, real and imaginary parts of dielectric function, electron energy-loss spectrum, refractive index, extinction coefficient and optical reflectivity have been explored from the first-principles band-structure calculations.

Magnetic penetration depth and flux dynamics in single-crystal Bi2Sr2CaCu2O8+δ

International Nuclear Information System (INIS)

Harshman, D.R.; Kleiman, R.N.; Inui, M.; Espinosa, G.P.; Mitzi, D.B.; Kapitulnik, A.; Pfiz, T.; Williams, D.L.

1991-01-01

The muon-spin-relaxation technique has been used to study vortex dynamics in single-phase superconducting single crystals of Bi 2 Sr 2 CaCu 2 O 8+δ (T c ∼90 K). The data indicate motional narrowing of the internal field distribution due to vortex motion (on a time scale comparable to the muon lifetime). A field-dependent lattice transition is also observed at T x ∼30 K, as evidenced by the onset of an asymmetric line shape below T x . Narrowing arising from disordering of the vortices along [001] is also discussed with reference to its effect on the measured penetration depth

Crystal structure determination of solar cell materials: Cu2ZnSnS4 thin films using X-ray anomalous dispersion

International Nuclear Information System (INIS)

Nozaki, Hiroshi; Fukano, Tatsuo; Ohta, Shingo; Seno, Yoshiki; Katagiri, Hironori; Jimbo, Kazuo

2012-01-01

Highlights: ► Cu 2 ZnSnS 4 thin films as a solar cell material were synthesized. ► The wavelength dependences of the diffraction intensity were measured. ► The crystal structures were clearly identified as kesterite structure for all samples. ► Crystal structure analysis revealed that the atomic compositions were Cu/(Zn + Sn) = 0.97 and Zn/Sn = 1.42 for the sample synthesized using stoichiometric amount of starting materials. - Abstract: The crystal structure of Cu 2 ZnSnS 4 (CZTS) thin films fabricated by vapor-phase sulfurization was determined using X-ray anomalous dispersion. High statistic synchrotron radiation X-ray diffraction data were collected from very small amounts of powder. By analyzing the wavelength dependencies of the diffraction peak intensities, the crystal structure was clearly identified as kesterite. Rietveld analysis revealed that the atomic composition deviated from stoichiometric composition, and the compositions were Cu/(Zn + Sn) = 0.97, and Zn/Sn = 1.42.

Influences of annealing temperature on sprayed CuFeO2 thin films

Science.gov (United States)

Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

2018-06-01

Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

Organic field-effect transistors using single crystals

Directory of Open Access Journals (Sweden)

Tatsuo Hasegawa and Jun Takeya

2009-01-01

Full Text Available Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs, the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

All-metallic electrically gated 2H-TaSe{sub 2} thin-film switches and logic circuits

Energy Technology Data Exchange (ETDEWEB)

Renteria, J.; Jiang, C.; Yan, Z. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Samnakay, R.; Goli, P. [Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Pope, T. R.; Salguero, T. T. [Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States); Wickramaratne, D.; Lake, R. K. [Laboratory for Terascale and Terahertz Electronics, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Khitun, A. G. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States)

2014-01-21

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe{sub 2} were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe{sub 2}–Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

O 1s core levels in Bi2Sr2CaCu2O8+δ single crystals

International Nuclear Information System (INIS)

Parmigiani, F.; Shen, Z.X.; Mitzi, D.B.; Lindau, I.; Spicer, W.E.; Kapitulnik, A.

1991-01-01

High-quality Bi 2 Sr 2 CaCu 2 O 8+δ superconducting single crystals, annealed at different oxygen partial pressures, have been studied using angular-resolved x-ray photoelectron spectroscopy with a resolution higher than that used in any previous study. Two states of the oxygen, separated by ∼0.7 eV, are unambiguously observed. Examining these components at different angles makes it possible to distinguish bulk from surface components. Using this capability we discover that annealing under lower oxygen partial pressure (1 atm) results in oxygen intercalation beneath the Bi-O surface layer of the crystal, whereas for higher-pressure anneals (12 atm) additional oxygen is found on the Bi-O surfaces. This steplike intercalation mechanism is also confirmed by the changes observed in the Cu and Bi core lines as a function of the annealing oxygen partial pressure

Dielectric Losses and Charge Transfer in Antimony-Doped TlGaS2 Single Crystal

Science.gov (United States)

Asadov, S. M.; Mustafaeva, S. N.

2018-03-01

Effect of semimetallic antimony (0.5 mol % Sb) on the dielectric properties and ac-conductivity of TlGaS2-based single crystals grown by the Bridgman-Stockbarger method has been studied. The experimental results on the frequency dispersion of dielectric coefficients and the conductivity of TlGa0.995Sb0.005S2 single crystals allowed the revealing of the dielectric loss nature, the charge transfer mechanism, and the estimation of the parameters of the states localized in the energy gap. The antimony-doping of the TlGaS2 single crystal leads to an increase in the density of states near the Fermi level and a decrease in the average time and average distance of hopes.

Direct measurements of conventional and anisotropic magnetocaloric effect in binary RAl2 single crystals

Science.gov (United States)

Monteiro, J. C. B.; Gandra, F. G.

2017-06-01

We report on specific heat and magnetocaloric effect (MCE) measurements in single crystals of HoAl2, DyAl2, and TbAl2 measured by a heat flux technique using Peltier devices. Those compounds order ferromagnetically at 31 K, 61 K, and 106 K respectively, and present a spin reorientation transition (SRT) below TC. We study the dependence of the SRT with magnetic field and temperature by means of specific heat measurements performed in single crystals oriented at the [" separators="| 100 ], [" separators="| 110 ], and [" separators="| 111 ] directions with the aid of calculations using a simple model. We obtained the conventional MCE for HoAl2 and TbAl2 and also the anisotropic version of the effect obtained indirectly from the specific heat for TbAl2 and DyAl2. We also present the results for a direct determination of the anisotropic MCE for DyAl2 by measuring the heat flux generated by a rotation of the single crystal under constant field.

Template synthesis and magnetic properties of highly aligned barium hexaferrite (BaFe12O19) nanofibers

International Nuclear Information System (INIS)

Huang, Boneng; Li, Congju; Wang, Jiaona

2013-01-01

Using electrospun poly(ethylene terephthalate)/citric acid (PET/CA) microfibers as the template, highly aligned barium hexaferrite (BaFe 12 O 19 ) nanofibers with diameters of ca. 800 nm and lengths up to 2 cm were synthesized by sol–gel precursor coating technique and subsequent high temperature calcination. Structural and morphological investigations revealed that individual BaFe 12 O 19 nanofibers were composed of numerous nanocrystallites stacking alternatively along the nanofiber axis, the average grain size was ca. 225 nm and the single crystallites on each BaFe 12 O 19 nanofibers were of random orientations. The formation mechanism of aligned BaFe 12 O 19 nanofibers was proposed based on experiment. The magnetic measurement revealed that the aligned BaFe 12 O 19 nanofibers exhibited orientation-dependent magnetic behavior with respect to the applied magnetic field. The magnetic anisotropy with the easy magnetizing axis along the length of the nanofibers was due to the shape anisotropy. Such aligned magnetic nanofibers can find relevance in application requiring an orientation-dependent physical response. - Highlights: ► A simple method was used to synthesize the aligned BaFe 12 O 19 nanofibers. ► The aligned BaFe 12 O 19 nanofibers display an obvious orientation-dependent magnetic behavior. ► The method can be readily applied to other aligned one-dimensional inorganic nanomaterials

Growth, optical and EPR studies of {sup 151}Eu{sup 2+}:YAG single crystals

Energy Technology Data Exchange (ETDEWEB)

Petrosyan, A.G., E-mail: pet@ipr.sci.am [Institute for Physical Research, National Academy of Sciences, Ashtarak, 0203 (Armenia); Asatryan, H.R. [Ioffe Physical-Technical Institute, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation); Hovhannesyan, K.L.; Derdzyan, M.V. [Institute for Physical Research, National Academy of Sciences, Ashtarak, 0203 (Armenia); Feofilov, S.P. [Ioffe Physical-Technical Institute, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation); Eganyan, A.V.; Sargsyan, R.S. [Institute for Physical Research, National Academy of Sciences, Ashtarak, 0203 (Armenia)

2017-01-01

Single crystals of {sup 151}Eu:YAG were grown by the vertical Bridgman method using Eu{sub 2}O{sub 3} with isotopic enrichment of {sup 151}Eu of 97.5%. Additional Hf{sup 4+}or Si{sup 4+} ions were introduced to favor a high concentrations of Eu{sup 2+}. As compared to Eu:YAG with natural isotope composition, the EPR spectra of YAG doped with {sup 151}Eu isotope show a reduced number of hyperfine structure components and a well-resolved structure of a bigger number of electronic transitions. Optical properties of obtained crystals and the effects of heat treatments under oxidizing and reducing conditions are reported. Based on the analysis of Eu{sup 3+} distribution in oxidized Eu,Hf:YAG, in comparison to that in Eu:YAG, the concentration of Eu{sup 2+} in as-grown Eu,Hf:YAG is determined. - Highlights: • YAG:Eu,Hf single crystals containing only {sup 151}Eu isotopes were prepared. • isotopic enriched crystals gave a well-resolved EPR hyperfine structure of Eu{sup 2+} centers. • the redox ratio was followed through the Eu{sup 2+} associated absorption band at 250 nm. • the band intensities at 378 nm correlate with the Eu{sup 2+} concentration.

Growth and Dielectric Properties of Ta-Doped La2Ti2O7 Single Crystals

Directory of Open Access Journals (Sweden)

Hui Wang

2018-02-01

Full Text Available High-quality Ta-doped La2Ti2O7 (Ta-LTO single crystal of about 40 mm in length and 5 mm in diameter was successfully prepared by the optical floating zone method. An X-ray rocking curve reveals that the crystal of LTO has excellent crystalline quality. As-grown crystals were transparent after annealing in air and the transmittance is up to 76% in the visible and near-infrared region. X-ray diffraction showed that this compound possessed a monoclinic structure with P21 space group. The dielectric properties were investigated as functions of temperature (0~300 °C and frequency (102 Hz~105 Hz. Dielectric spectra indicated an increase in the room-temperature dielectric constant accompanied by a drop in the loss tangent as a result of the Ta doping. One relaxation was observed in the spectra of electric modulus, which was ascribed to be related to the oxygen vacancy. The dielectric relaxation with activation energy of 1.16 eV is found to be the polaron hopping caused by the oxygen vacancies.

Growth and superconducting properties of Bi2Sr2Ca2Cu3O10 single crystals

International Nuclear Information System (INIS)

Clayton, N; Musolino, N; Giannini, E; Garnier, V; Fluekiger, R

2004-01-01

Single crystals of Bi 2 Sr 2 Ca 2 Cu 3 O 10 (Bi-2223) have been grown using the travelling solvent floating zone technique in an image furnace. Annealing the crystals under high pressures of O 2 increased their critical temperature to 109 K, and resulted in sharp superconducting transitions of ΔT c = 1 K. The superconducting anisotropy of Bi-2223 was found to be ∼ 50, from measurements of the lower critical field with the magnetic field applied parallel and perpendicular to the c-axis. The anisotropy of Bi-2223 is significantly reduced compared to that of Bi 2 Sr 2 CaCu 2 O 8 (Bi-2212), and this accounts for the enhanced irreversibility fields in Bi-2223. Furthermore, Bi-2223 has a higher critical current density, and a reduced magnetic relaxation rate compared to Bi-2212, which are both signatures of more effective pinning in Bi-2223 due to its reduced anisotropy

Fundamental optical absorption edge in MnGa2Te4 single crystals

International Nuclear Information System (INIS)

Medvedkin, G.A.; Rud, Yu.V.; Tairov, M.A.

1988-01-01

A study is made of the optical properties of oriented MnGa 2 Te 4 crystals in the region of the fundamental absorption edge. The energy gap width for the temperatures 77, 300, and 370 K is determined to be E G = 1.635, 1.52, and 1.50 eV. The spectral response α(ℎω/2π) is found to follow Urbach's rule thoughout the temperature range studied, the slope of the absorption edge remaining constant (α = 10 2 cm -1 ). Crystal annealing with subsequent rapid cooling results in a shift of the absorption edge longward by 25 meV with the exponential form of α(ℎω/2π) prevailing over the range T = 77 to 370 K. An analysis shows the optical absorption in the region of the fundamental edge to be a sum of the effects coming from the density-of-states tails, local scattering centers associated with a high vacancy concentration, and electron-phonon interaction. Optical linear dichroism of the absorption edge of MnGa 2 Te 4 single crystals with pseudotetragonal structure is revealed and studied. The single crystals are established to be optically uniaxial, their optical transmission dichroism being negative. It is shown that the minimal direct optical transitions in MnGa 2 Te 4 are allowed in the E parallel c polarization in the temperature range 77 to 370 K, the crystal-field splitting of the valence band increasing with temperature. (author)

Crystal Structure of AgBi2I7 Thin Films.

Science.gov (United States)

Xiao, Zewen; Meng, Weiwei; Mitzi, David B; Yan, Yanfa

2016-10-06

Synthesis of cubic-phase AgBi 2 I 7 iodobismuthate thin films and fabrication of air-stable Pb-free solar cells using the AgBi 2 I 7 absorber have recently been reported. On the basis of X-ray diffraction (XRD) analysis and nominal composition, it was suggested that the synthesized films have a cubic ThZr 2 H 7 crystal structure with AgBi 2 I 7 stoichiometry. Through careful examination of the proposed structure and computational evaluation of the phase stability and bandgap, we find that the reported "AgBi 2 I 7 " films cannot be forming with the ThZr 2 H 7 -type structure, but rather more likely adopt an Ag-deficient AgBiI 4 type. Both the experimental X-ray diffraction pattern and bandgap can be better explained by the AgBiI 4 structure. Additionally, the proposed AgBiI 4 structure, with octahedral bismuth coordination, removes unphysically short Bi-I bonding within the [BiI 8 ] hexahedra of the ThZr 2 I 7 model. Our results provide critical insights for assessing the photovoltaic properties of AgBi 2 I 7 iodobismuthate materials.

Giant coercivity in ferromagnetic Co doped ZnO single crystal thin film

International Nuclear Information System (INIS)

Loukya, B.; Negi, D.S.; Dileep, K.; Kumar, N.; Ghatak, Jay; Datta, R.

2013-01-01

The origin of ferromagnetism in ZnO doped with transition metal impurities has been discussed extensively and appeared to be a highly controversial and challenging topic in today's solid state physics. Magnetism observed in this system is generally weak and soft. We have grown Co:ZnO up to 30 at% Co in single crystal thin film form on c-plane sapphire. A composition dependent coercivity is observed in this system which reaches peak value at 25 at% Co, the values are 860 Oe and 1149 Oe with applied field along parallel and perpendicular to the film substrate interface respectively. This giant coercivity might pave the way to exploit this material as a magnetic semiconductor with novel logic functionalities. The findings are explained based on defect band itinerant ferromagnetism and its partial interaction with localized d electrons of Co through charge transfer. Besides large coercivity, an increase in the band gap with Co concentration has also been observed along with blue emission peak with long tail confirming the formation of extended point defect levels in the host lattice band gap. - Highlights: • Co doped ZnO ferromagnetic single crystal thin film. • Giant coercivity in Co:ZnO thin film which may help to turn this material into application. • Cathodoluminescence (CL) data showing increase in band gap with Co concentrations. • A theoretical proposal is made to explain the observed giant coercivity

EPR and optical absorption studies of VO2+ doped L-alanine (C3H7NO2) single crystals

International Nuclear Information System (INIS)

Biyik, Recep

2009-01-01

VO 2+ doped L-alanine (C 3 H 7 NO 2 ) single crystals and powders are examined by electron paramagnetic resonance (EPR) and optical absorption spectroscopy. Three magnetically different sites are resolved from angular variations of L-alanine single crystal EPR spectra. In some specific orientations each VO 2+ line splits into three superhyperfine lines with intensities of 1:2:1 and maximum splitting value of 2.23 mT. The local symmetries of VO 2+ complex sites are nearly axial. The optical absorption spectra show three bands. Spin Hamiltonian parameters are measured and molecular orbital coefficients are calculated by correlating EPR and optical absorption data for the central vanadyl ion.

Zintl-phases with layer anions: preparation and crystal structures of the isotypic compounds SrSn sub 2 As sub 2 and Sr sub 0. 87 Ba sub 0. 13 Sn sub 2 As sub 2 and a single crystal structure determination of KSnSb. Zintl-Phasen mit Schichtanionen: Darstellung und Kristallstrukturen der isotypen Verbindungen SrSn sub 2 As sub 2 und Sr sub 0,87 Ba sub 0,13 Sn sub 2 As sub 2 sowie eine Einkristallstrukturbestimmung von KSnSb

Energy Technology Data Exchange (ETDEWEB)

Eisenmann, B; Klein, J [Abt. 2 fuer Anorganische Chemie, Technische Hochschule Darmstadt (Germany)

1991-06-01

The metallic reflecting compounds SrSn{sub 2}As{sub 2} and Sr{sub 0.87}Ba{sub 0.13}Sn{sub 2}As{sub 2} were prepared from the melt, they crystallize in the trigonal rhombohedral system (space group R3m, Z = 3) with lattice constants see ''Inhaltsuebersicht''. In the crystal structure of the isotypic compounds threebonded Sn atoms and threebonded As atoms together form puckered layers which are isostructural to grey As. The mean values of the bond lengths Sn -- As are 277.6 pm (SrSn{sub 2}As{sub 2}) and 279.1 pm (Sr{sub 0.87}Ba{sub 0.13}Sn{sub 2}As{sub 2}) resp. Along (001) the alkaline earth atoms occupy the octahedral interstices of As atoms between each second SnAs layer. The single crystal structure determination of KSnSb confirms the results of the X-ray powder analysis, but leads to slightly different values for the bond lengths.

Anisotropy in Ba2Cu3O4Cl2 single crystals grown by the traveling solvent floating zone method

International Nuclear Information System (INIS)

Yamada, Shigeki; Iwagaki, Yohei; Noro, Sumiko

2007-01-01

Magnetic and electrical properties of layered copper oxychloride Ba 2 Cu 3 O 4 Cl 2 single crystals are measured. Single crystal growth of Ba 2 Cu 3 O 4 Cl 2 by the traveling solvent floating zone method is attempted using Ba 3 Cu 2 O 4 Cl 2 as solvent. By optimization of the growth conditions, large single crystals of (φ5mmx30mm) of Ba 2 Cu 3 O 4 Cl 2 are grown. The resistivity with the current parallel to the c-axis is 10 2 -10 3 times larger than that with the current perpendicular to the a-axis. The temperature dependence of the dielectric spectrum for each direction is measured and analyzed by using the Debye model. The spectrum width, which is related to the effective number of electrons (n/m), does not show an appreciable dependence on temperature. The characteristic frequencies at which the dielectric constant changes, which are related to the dissipation (γ), increase with warming. The temperature dependence is almost the same as the resistivity curve. This indicates that the hopping process dominates both DC- and AC-type electrical transport. The spectrum width with the electric field parallel to the a-axis is 30 times larger than that with the electric field parallel to the c-axis. On the other hand, the characteristic frequencies do not show an appreciable dependence on electric field direction

Bi sub 2 Sr sub 2 Ca sub n sub - sub 1 Cu sub n O sub y films sputtered on substrates of Bi sub 2 Sr sub 2 CuO sub y single crystals

CERN Document Server

Katsurahara, K; Matsumoto, K; Fujiwara, N; Tanaka, H; Kishida, S

2003-01-01

We prepared Bi sub 2 Sr sub 2 CaCu sub 2 O sub y (Bi-2212) films on substrates of Bi sub 2 Sr sub 2 CuO sub y (Bi-2201) single crystals by a rf magnetron sputtering method, where He and O sub 2 mixture sputtering gas and an off-axis geometry were used. The EPMA measurement indicated that the films deposited on the Bi-2201 single crystal had approximately the same composition as those on MgO substrate, which showed a Bi-221 single-phase. The film deposited on the Bi-2201 single crystal post-annealed at 500degC for 0.5h showed a metallic temperature dependent resistance in the normal state and the superconducting transition (T sub c sup o sup n sup s sup e sup t) of about 80 K. Therefore, the Bi-2212 films are considerate to grow on the substrate of the Bi-2201 singe crystal. (author)

Synthesis, crystal growth and characterization of bioactive material: 2- Amino-1H-benzimidazolium pyridine-3-carboxylate single crystal- a proton transfer molecular complex

Science.gov (United States)

Fathima, K. Saiadali; Kavitha, P.; Anitha, K.

2017-09-01

The 1:1 molecular adducts 2- Amino-1H-benzimidazolium pyridine-3-carboxylate (2ABPC) was synthesized and grown as single crystal where 2-aminobenzimidazole (ABI) acts as a donor and nicotinic acid (NA) acts as an acceptor. The presence of proton and carbon were predicted using 1H and 13C NMR spectral analysis. The molecular structure of the crystal was elucidated by subjecting the grown crystals to the single crystal x-ray diffraction analysis and was refined by full matrix least-squares method to R = 0.038 for 2469 reflections. The vibrational modes of functional group have been studied using FTIR and Raman spectroscopic analysis. The UV-Vis spectrum exhibited a visible band at 246 nm for 2ABPC due to the nicotinate anion of the molecule. Further, the antimicrobial activity of 2ABPC complex against B. subtilis, klebsiella pneumonia, Pseudomonas eruginos and E. coli pathogens was investigated. Minimum Inhibitory Concentration (MIC) for this crystal was obtained using UV spectrometer against MRSA pathogen. It was found that the benzimidazole with aminogroup at position 2 increases the general antimicrobial activities of 2ABPC crystal.

Thin film growth of CaFe2As2 by molecular beam epitaxy

International Nuclear Information System (INIS)

Hatano, T; Fujimoto, R; Nakamura, I; Mori, Y; Ikuta, H; Kawaguchi, T; Harada, S; Ujihara, T

2016-01-01

Film growth of CaFe 2 As 2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe 2 As 2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch. (paper)

Thin film growth of CaFe2As2 by molecular beam epitaxy

Science.gov (United States)

Hatano, T.; Kawaguchi, T.; Fujimoto, R.; Nakamura, I.; Mori, Y.; Harada, S.; Ujihara, T.; Ikuta, H.

2016-01-01

Film growth of CaFe2As2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe2As2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch.

Electrochemically modified crystal orientation, surface morphology and optical properties using CTAB on Cu2O thin films

Directory of Open Access Journals (Sweden)

Karupanan Periyanan Ganesan

Full Text Available Cuprous oxide (Cu2O thin films with different crystal orientations were electrochemically deposited in the presence of various molar concentrations of cetyl trimethyl ammonium bromide (CTAB on fluorine doped tin oxide (FTO glass substrate using standard three electrodes system. X-ray diffraction (XRD studies reveal cubic structure of Cu2O with (111 plane orientation, after addition of CTAB in deposition solution, the orientation of crystal changes from (111 into (200 plane. Scanning electron microscope (SEM images explored significant variation on morphology of Cu2O thin films deposited with addition of CTAB compared to without addition of CTAB. Photoluminescence (PL spectra illustrate that the emission peak around at 650 nm is attributed to near band edge emission, and the film prepared at the 3 mM of CTAB exhibits much higher intensity than that of the all other films. UV–Visible spectra show optical absorption in the range of 480–610 nm and the highest transparency of Cu2O film prepared at the concentration of 3 mM CTAB. The optical band gap is increased in the range between 2.16 and 2.45 eV with increasing the CTAB concentrations. Keywords: Cuprous oxide, Crystal orientation, Electrodeposition and cubic structure

High-quality single crystal growth and magnetic property of Mn4Ta2O9

Science.gov (United States)

Cao, Yiming; Xu, Kun; Yang, Ya; Yang, Wangfan; Zhang, Yuanlei; Kang, Yanru; He, Xijia; Zheng, Anmin; Liu, Mian; Wei, Shengxian; Li, Zhe; Cao, Shixun

2018-06-01

A large-size single crystal of Mn4Ta2O9 with ∼3.5 mm in diameter and ∼65 mm in length was successfully grown for the first time by a newly designed one-step method based on the optical floating zone technique. Both the clear Laue spots and sharp XRD Bragg reflections suggest the high quality of the single crystal. In Mn4Ta2O9 single crystal, an antiferromagnetic phase transition was observed below Néel temperature 102 K along c axis, which is similar to the isostructural compound Mn4Nb2O9, but differs from the isostructural Co4Nb2O9. Relative dielectric constant at 30 kOe suggests that no magnetoelectric coupling exists in Mn4Ta2O9.

Lithium ion intercalation in thin crystals of hexagonal TaSe2 gated by a polymer electrolyte

Science.gov (United States)

Wu, Yueshen; Lian, Hailong; He, Jiaming; Liu, Jinyu; Wang, Shun; Xing, Hui; Mao, Zhiqiang; Liu, Ying

2018-01-01

Ionic liquid gating has been used to modify the properties of layered transition metal dichalcogenides (TMDCs), including two-dimensional (2D) crystals of TMDCs used extensively recently in the device work, which has led to observations of properties not seen in the bulk. The main effect comes from the electrostatic gating due to the strong electric field at the interface. In addition, ionic liquid gating also leads to ion intercalation when the ion size of the gate electrolyte is small compared to the interlayer spacing of TMDCs. However, the microscopic processes of ion intercalation have rarely been explored in layered TMDCs. Here, we employed a technique combining photolithography device fabrication and electrical transport measurements on the thin crystals of hexagonal TaSe2 using multiple channel devices gated by a polymer electrolyte LiClO4/Polyethylene oxide (PEO). The gate voltage and time dependent source-drain resistances of these thin crystals were used to obtain information on the intercalation process, the effect of ion intercalation, and the correlation between the ion occupation of allowed interstitial sites and the device characteristics. We found a gate voltage controlled modulation of the charge density waves and a scattering rate of charge carriers. Our work suggests that ion intercalation can be a useful tool for layered materials engineering and 2D crystal device design.

Enhanced visible light photocatalytic performance of polyaniline modified mesoporous single crystal TiO{sub 2} microsphere

Energy Technology Data Exchange (ETDEWEB)

Deng, Yaocheng [College of Environmental Science and Engineering, Hunan University, Changsha, 410082 (China); Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha 410082 (China); Tang, Lin, E-mail: tanglin@hnu.edu.cn [College of Environmental Science and Engineering, Hunan University, Changsha, 410082 (China); Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha 410082 (China); Zeng, Guangming, E-mail: zgming@hnu.edu.cn [College of Environmental Science and Engineering, Hunan University, Changsha, 410082 (China); Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha 410082 (China); Dong, Haoran; Yan, Ming; Wang, Jingjing [College of Environmental Science and Engineering, Hunan University, Changsha, 410082 (China); Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha 410082 (China); Hu, Wei [College of Physics and Microelectronics Science, Hunan University, Changsha, 410082 (China); Wang, Jiajia; Zhou, Yaoyu; Tang, Jing [College of Environmental Science and Engineering, Hunan University, Changsha, 410082 (China); Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha 410082 (China)

2016-11-30

Highlights: • The mesoporous single crystal microsphere of PANI/MS-TiO{sub 2} improved the light absorption. • The mesoporous structure of MS-TiO{sub 2} can increase the loading amount of PANI. • The synergistic effect between PANI and MS-TiO{sub 2} promoted the separation of charges. • Improved photocatalysis was achieved via PANI modified mesoporous single crystal TiO{sub 2} microsphere. - Abstract: Polyaniline (PANI) modified mesoporous single crystal TiO{sub 2} microsphere (PANI/MS-TiO{sub 2}) with excellent photocatalytic activity was successfully prepared by a simple method of solution evaporation and chemisorption. The X-ray diffraction characterization demonstrated that the whole MS-TiO{sub 2} kept the crystal type of anatase. The nitrogen adsorption-desorption characterization coupled with scanning electron microscopy indicated that the MS-TiO{sub 2} possessed a unique mesoporous structure with high specific surface area, which resulted in the increased load of PANI on the surface of MS-TiO{sub 2} and multiple light reflection in the photocatalyst. The UV–vis diffuse reflectance spectra confirmed that PANI/MS-TiO{sub 2} presented more absorption ability in the visible light range than that of the pristine MS-TiO{sub 2}. The transient photocurrent responses and electrochemical impedance spectroscopy (EIS) indicated the high photo responses and fast photogenerated charge separation efficiency of PANI/MS-TiO{sub 2}. The photocatalytic activity of the PANI/MS-TiO{sub 2} was evaluated by the photodegradation of RhB and MB under visible light irradiation. MS-TiO{sub 2} photocatalyst with different molar ration of PANI had been prepared, and the results showed that the optimal photocatalyst (PANI/MS-TiO{sub 2} (1:40)) exhibited the highest photocatalytic efficiency which is nearly three times as great as that of pristine MS-TiO{sub 2} for the degradation of the RhB and MB under visible light irradiation. The remarkable performance of the PANI

Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains

KAUST Repository

Diao, Ying

2013-06-02

Solution coating of organic semiconductors offers great potential for achieving low-cost manufacturing of large-area and flexible electronics. However, the rapid coating speed needed for industrial-scale production poses challenges to the control of thin-film morphology. Here, we report an approach - termed fluid-enhanced crystal engineering (FLUENCE) - that allows for a high degree of morphological control of solution-printed thin films. We designed a micropillar-patterned printing blade to induce recirculation in the ink for enhancing crystal growth, and engineered the curvature of the ink meniscus to control crystal nucleation. Using FLUENCE, we demonstrate the fast coating and patterning of millimetre-wide, centimetre-long, highly aligned single-crystalline organic semiconductor thin films. In particular, we fabricated thin films of 6,13-bis(triisopropylsilylethynyl) pentacene having non-equilibrium single-crystalline domains and an unprecedented average and maximum mobilities of 8.1±1.2 cm2 V-1 s -1 and 11 cm2 V-1 s-1. FLUENCE of organic semiconductors with non-equilibrium single-crystalline domains may find use in the fabrication of high-performance, large-area printed electronics. © 2013 Macmillan Publishers Limited. All rights reserved.

Free-Standing β-Ga2O3 Thin Diaphragms

Science.gov (United States)

Zheng, Xu-Qian; Lee, Jaesung; Rafique, Subrina; Han, Lu; Zorman, Christian A.; Zhao, Hongping; Feng, Philip X.-L.

2018-02-01

Free-standing, very thin, single-crystal β-gallium oxide (β-Ga2O3) diaphragms have been constructed and their dynamical mechanical properties characterized by noncontact, noninvasive optical measurements harnessing the multimode nanomechanical resonances of these suspended nanostructures. We synthesized single-crystal β-Ga2O3 using low-pressure chemical vapor deposition (LPCVD) on a 3C-SiC epilayer grown on Si substrate at temperature of 950°C for 1.5 h. The synthesized single-crystal nanoflakes had widths of ˜ 2 μm to 30 μm and thicknesses of ˜ 20 nm to 140 nm, from which we fabricated free-standing circular drumhead β-Ga2O3 diaphragms with thicknesses of ˜ 23 nm to 73 nm and diameters of ˜ 3.2 μm and ˜ 5.2 μm using a dry stamp-transfer technique. Based on measurements of multiple flexural-mode mechanical resonances using ultrasensitive laser interferometric detection and performing thermal annealing at 250°C for 1.5 h, we quantified the effects of annealing and adsorption of atmospheric gas molecules on the resonant characteristics of the diaphragms. Furthermore, we studied the effects of structural nonidealities on these free-standing β-Ga2O3 nanoscale diaphragms. We present extensive characterization of the mechanical and optical properties of free-standing β-Ga2O3 diaphragms, paving the way for realization of resonant transducers using such nanomechanical structures for use in applications including gas sensing and ultraviolet radiation detection.

Single-crystalline MgAl2O4 spinel nanotubes using a reactive and removable MgO nanowire template

International Nuclear Information System (INIS)

Fan Hongjin; Knez, Mato; Scholz, Roland; Nielsch, Kornelius; Pippel, Eckhard; Hesse, Dietrich; Goesele, Ulrich; Zacharias, Margit

2006-01-01

Using MgO nanowires as a reactive template, we fabricated for the first time single-crystal MgAl 2 O 4 spinel nanotubes through an interfacial solid-state reaction of MgO-Al 2 O 3 core-shell nanowires. Single-crystal MgO nanowires are coated with a conformal thin layer of amorphous Al 2 O 3 via atomic layer deposition. Subsequent annealing at 700 deg. C activates the interfacial reaction between MgO and Al 2 O 3 , transforming the alumina shell into a spinel shell. Finally, after etching away the remaining MgO core in ammonia sulfuric solution, MgAl 2 O 4 spinel nanotubes are obtained. As a transition from conventional planar spinel layers via thin-film interface reactions, our result might open a window for the fabrication of a wide variety of MgO-based spinel one-dimensional nanostructures

Preparation of Anatase TiO2 Thin Films with (OiPr)2Ti(CH3COCHCONEt2)2 Precursor by MOCVD

International Nuclear Information System (INIS)

Bae, Byoung Jae; Seo, Won Seok; Miah, Arzu; Park, Joon T.; Lee, Kwang Yeol; Kim, Keun Chong

2004-01-01

The reaction of titanium tetraisopropoxide with 2 equiv of N,N-diethyl acetoacetamide affords Ti(O i Pr) 2 (CH 3 COCHCONEt 2 ) 2 (1) as colorless crystals in 80% yield. Compound 1 is characterized by spectroscopic (Mass and 1 H/ 13 C NMR) and microanalytical data. Molecular structure of 1 has been determined by a single crystal X-ray diffraction study, which reveals that it is a monomeric, cis-diisopropoxide and contains a six coordinate Ti(IV) atom with a cis(CONEt 2 ), trans(COCH 3 ) configuration (1a) in a distorted octahedral environment. Variable-temperature 1 H NMR spectra of 1 indicate that it exists as an equilibrium mixture of cis, trans (1a) and cis, cis (1b) isomers in a 0.57 : 0.43 ratio at -20 .deg. C in toluene-d 8 solution. Thermal properties of 1 as a MOCVD precursor for titanium dioxide films have been evaluated by thermal gravimetric analysis and vapor pressure measurement. Thin films of pure anatase titanium dioxide (after annealing above 500 .deg. C under oxygen) have been grown on Si(100) with precursor 1 in the substrate temperature range of 350- 500 .deg. C using a bubbler-based MOCVD method

MgB2 and Mg1-xAlxB2 single crystals: high pressure growth and physical properties

International Nuclear Information System (INIS)

Karpinski, J.; Kazakov, S.M.; Jun, J.; Zhigadlo, N.D.; Angst, M.; Puzniak, R.; Wisniewski, A.

2004-01-01

Single crystals of MgB 2 have been grown with a high pressure cubic anvil technique. They grow via the peritectic decomposition of the MgNB 9 ternary nitride. The crystals are of a size up to 2 x 1 x 0.1 mm 3 with a weight up to 230 μg. Typically they have transition temperatures between 38 and 38.6 K with a width of 0.3-0.5 K. Investigations of the P-T phase diagram prove that the MgB 2 phase is stable at least up to 2190 deg. C at high hydrostatic pressure in the presence of Mg vapor under high pressure. Substitution of aluminum for magnesium in single crystals leads to stepwise decrease of T c . This indicates a possible appearance of superstructures or phases with different T c 's. The upper critical field decreases with Al doping

Single crystal study of the heavy-fermion antiferromagnet CePt2In7

International Nuclear Information System (INIS)

Tobash, Paul H; Ronning, F; Thompson, J D; Scott, B L; Bauer, E D; Moll, P J W; Batlogg, B

2012-01-01

We report the synthesis, structure, and physical properties of single crystals of CePt 2 In 7 . Single crystal x-ray diffraction analysis confirms the tetragonal I4/mmm structure of CePt 2 In 7 with unit cell parameters a = 4.5886(6) Å, c = 21.530(6) Å and V = 453.32(14) Å 3 . The magnetic susceptibility, heat capacity, Hall effect and electrical resistivity measurements are all consistent with CePt 2 In 7 undergoing an antiferromagnetic order transition at T N = 5.5 K, which is field independent up to 9 T. Above T N , the Sommerfeld coefficient of specific heat is γ ≈ 300 mJ mol -1 K -2 , which is characteristic of an enhanced effective mass of itinerant charge carriers. The electrical resistivity is typical of heavy-fermion behavior and gives a residual resistivity ρ 0 ∼ 0.2 µΩ cm, indicating good crystal quality. CePt 2 In 7 also shows moderate anisotropy of the physical properties that is comparable to structurally related CeMIn 5 (M = Co, Rh, Ir) heavy-fermion superconductors. (paper)

Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

Energy Technology Data Exchange (ETDEWEB)

Roberts, Joel Glenn [Univ. of California, Berkeley, CA (United States)

2000-05-01

The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

Synthesis of Mesoporous Single Crystal Co(OH)2 Nanoplate and Its Topotactic Conversion to Dual-Pore Mesoporous Single Crystal Co3O4.

Science.gov (United States)

Jia, Bao-Rui; Qin, Ming-Li; Li, Shu-Mei; Zhang, Zi-Li; Lu, Hui-Feng; Chen, Peng-Qi; Wu, Hao-Yang; Lu, Xin; Zhang, Lin; Qu, Xuan-Hui

2016-06-22

A new class of mesoporous single crystalline (MSC) material, Co(OH)2 nanoplates, is synthesized by a soft template method, and it is topotactically converted to dual-pore MSC Co3O4. Most mesoporous materials derived from the soft template method are reported to be amorphous or polycrystallined; however, in our synthesis, Co(OH)2 seeds grow to form single crystals, with amphiphilic block copolymer F127 colloids as the pore producer. The single-crystalline nature of material can be kept during the conversion from Co(OH)2 to Co3O4, and special dual-pore MSC Co3O4 nanoplates can be obtained. As the anode of lithium-ion batteries, such dual-pore MSC Co3O4 nanoplates possess exceedingly high capacity as well as long cyclic performance (730 mAh g(-1) at 1 A g(-1) after the 350th cycle). The superior performance is because of the unique hierarchical mesoporous structure, which could significantly improve Li(+) diffusion kinetics, and the exposed highly active (111) crystal planes are in favor of the conversion reaction in the charge/discharge cycles.

Single crystal growth of high-temperature superconductor Bi2.1Sr1.9Ca1.0Cu2.0AlyOx

International Nuclear Information System (INIS)

Gu, G.D.; Lin, Z.W.

2000-01-01

The effect of Al doping on the crystal growth of Bi-2212 was studied by a floating zone method. The results show that the planar solid-liquid interface breaks down into a cellular growth front while increasing Al doping in the rods of Bi 2.1 Sr 1.9 Ca 1.0 Cu 2.0 Al y O x . The size of the single crystals decreases with the increase in Al doping. The solubility limit for Al or the maximum Cu-site substitution by Al in the Bi-2212 crystals is less than y = 0.01. The majority of nominal Al doping in the rods forms an Al-rich phase in the grain boundaries of the single crystals. The superconductivity of as-grown Al-doped crystals decreases progressively with increasing Al doping in the rods, however, the T c for annealed Al-doped crystals does not change with increasing Al doping in the rods. The unchanged T c for annealed Al-doped Bi-2212 crystals either suggests that a small amount of Al substitution in the Cu site does not cause T c to drop significantly, or indicates that Al only enters the Bi-2212 crystals as an impurity, but does not substitute at the Cu site in the Bi-2212 crystals. (author)

A Nanoindentation Study of the Plastic Deformation and Fracture Mechanisms in Single-Crystalline CaFe2As2

Science.gov (United States)

Frawley, Keara G.; Bakst, Ian; Sypek, John T.; Vijayan, Sriram; Weinberger, Christopher R.; Canfield, Paul C.; Aindow, Mark; Lee, Seok-Woo

2018-04-01

The plastic deformation and fracture mechanisms in single-crystalline CaFe2As2 has been studied using nanoindentation and density functional theory simulations. CaFe2As2 single crystals were grown in a Sn-flux, resulting in homogeneous and nearly defect-free crystals. Nanoindentation along the [001] direction produces strain bursts, radial cracking, and lateral cracking. Ideal cleavage simulations along the [001] and [100] directions using density functional theory calculations revealed that cleavage along the [001] direction requires a much lower stress than cleavage along the [100] direction. This strong anisotropy of cleavage strength implies that CaFe2As2 has an atomic-scale layered structure, which typically exhibits lateral cracking during nanoindentation. This special layered structure results from weak atomic bonding between the (001) Ca and Fe2As2 layers.

Two-step transition towards the reversibility region in Bi2Sr2CaCu2O8-δ single crystals

Science.gov (United States)

Pastoriza, H.; de La Cruz, F.; Mitzi, D. B.; Kapitulnik, A.

1992-10-01

We have performed magnetization measurements on Bi2Sr2CaCu2O8-δ single crystals in the c^ crystallographic direction for fields from 2 Oe up to 700 Oe. The results strongly suggest that the reversible thermodynamic region is achieved after the vortex flux structure shows an abrupt transition at a temperature lower than that determined by the irreversibility line.

Inducing phase decomposition and superconductivity of Bi2Sr2CaCu2Oy single crystals treated in sulphur atmosphere at low temperature

International Nuclear Information System (INIS)

Chen, Q.W.; China Univ. of Science and Technology, Hefei, AH; Wu, W.B.; Qian, Y.T.; China Univ. of Science and Technology, Hefei, AH; Wang, L.B.; Li, F.Q.; Zhou, G.E.; Chen, Z.Y.; Zhang, Y.H.

1995-01-01

As it has been pointed out, phase decomposition which may be hard to be detected in a polycrystalline system and is likely to correlate with changes in both oxygen content and microstructure, has been observed frequently in annealed single crystals especially at higher temperatures (> 500 C). This is still an open question to some degree because the mechanism of phase decomposition is very complex and is dominated by the composition of the Bi-2212 phase, the condition of heat treatment, and the atmosphere. Hence, inducing oxygen loss at low temperature to avoid the evaporation of Bi atoms and other undetected structure changes which would occur at higher temperature annealing undoubtedly provides important information about the relationship between oxygen loss and phase decomposition, as well as the relationship between oxygen content and superconductivity. In this note, we report on the results of treatments of Bi 2 Sr 2 CaCu 2 O y single crystals in sulphur atmosphere at 160 C. (orig.)

Ultrahigh vacuum STM/STS studies of the Bi-O surface in Bi2Sr2CuOy single crystals

International Nuclear Information System (INIS)

Ikeda, Kazuto; Tomeno, Izumi; Takamuku, Kenshi; Yamaguchi, Koji; Itti, Rittaporn; Koshizuka, Naoki

1992-01-01

Scanning tunneling microscopic and spectroscopic studies were made on cleaved surfaces of Bi 2 Sr 2 CuO y single crystals using an ultrahigh-vacuum scanning tunneling microscope (UHV-STM). The modulation structures of the Bi-O surface were observed at room temperature with atomic resolution. The tunneling spectra showed electronic gap structures similar to those observed for the Bi-O surface of superconducting Bi-2212 single crystals. This suggests that superconductivity is not directly related to the electronic structure observed in the Bi-O plane. (orig.)

Optical properties of Ni-doped MgGa2O4 single crystals grown by floating zone method

International Nuclear Information System (INIS)

Suzuki, Takenobu; Hughes, Mark; Ohishi, Yasutake

2010-01-01

The single crystal growth conditions and spectroscopic characterization of Ni-doped MgGa 2 O 4 with inverse-spinel structure crystal family are described. Single crystals of this material have been grown by floating zone method. Ni-doped MgGa 2 O 4 single crystals have broadband fluorescence in the 1100-1600 nm wavelength range, 1.6 ms room temperature lifetime, 56% quantum efficiency and 1.05x10 -21 cm 2 stimulated emission cross section at the emission peak. This new material is very promising for tunable laser applications covering the important optical communication and eye safe wavelength region.

Spatially resolved resistivity near the vortex lattice phase transition in Bi 2Sr 2CaCu 2O 8+δ single crystals

Science.gov (United States)

Berseth, V.; Indenbom, M. V.; van der Beek, C. J.; D'Anna, G.; Benoit, W.

1997-08-01

Using a multiterminal contact configuration, we investigate the local variations of the resistivity drop near the vortex lattice first order phase transition in a very homogeneous Bi2Sr2CaCu2O8+δ (BSCCO) single crystal.

Comprehensive study of out-of-plane transport properties in BaFe2As2 : Three-dimensional electronic state and effect of chemical substitution

Science.gov (United States)

Nakajima, M.; Nagafuchi, M.; Tajima, S.

2018-03-01

We investigated the out-of-plane transport properties of parent and chemically substituted BaFe2As2 for various types of substitution. Based on the studies of the Hall coefficient and chemical-substitution effect, we have clarified the origin for the unusual temperature dependence of out-of-plane resistivity ρc(T ) in the high-temperature paramagnetic-tetragonal phase. Electron (hole) carriers have an incoherent (coherent) character, which is responsible for nonmetallic (metallic) ρc(T ) . Although the electron and hole contributions are almost comparable, a slightly larger contribution comes from electrons at high temperatures but from holes at low temperatures, resulting in a maximum in ρc(T ) . In the low-temperature antiferromagnetic-orthorhombic phase, the major effect of substitution is to increase the residual-resistivity component, as in the case for the in-plane transport. In particular, Co atoms substituted for Fe give rise to strong scattering with large ac anisotropy. We found that K substitution induces a nonmetallic behavior in ρc(T ) at low temperatures, which is likely due to a weakly localized nature along the c -axis direction.

Preparation of transparent Cu{sub 2}Y{sub 2}O{sub 5} thin films by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Chiu, Te-Wei, E-mail: tewei@ntut.edu.tw; Chang, Chih-Hao; Yang, Li-Wei; Wang, Yung-Po

2015-11-01

Highlights: • Cu{sub 2}Y{sub 2}O{sub 5} thin films were prepared by RF magnetron sputtering. • Cu{sub 2}Y{sub 2}O{sub 5} thin films have high transmittance and antibacterial properties. • Mechanical properties of Cu{sub 2}Y{sub 2}O{sub 5} thin films were investigated. - Abstract: Cu{sub 2}Y{sub 2}O{sub 5} thin films were deposited on non-alkali glass substrates by RF magnetron sputtering. Its crystal structure, microstructure, optical property, mechanical property, and antibacterial activity were investigated by grazing-incidence X-ray diffraction, transmittance spectra, nanoindenter, and antibiotics test, respectively. A single-phase of Cu{sub 2}Y{sub 2}O{sub 5} was obtained while annealing at 700 °C in air and its optical transparency was >80% in the visible region. The hardness and elastic modulus of the film were 6.7 GPa and 82 GPa, respectively. Antibiotics testing result revealed that Cu{sub 2}Y{sub 2}O{sub 5} surface had a superior antibacterial performance even at a dark environment. Therefore, Cu{sub 2}Y{sub 2}O{sub 5} is a promising novel transparent antibacterial hard coating material.

Growth, structure, Hirshfeld surface and spectroscopic properties of 2-amino-4-hydroxy-6-methylpyrimidinium-2,3-pyrazinedicorboxylate single crystal

Science.gov (United States)

Faizan, Mohd; Alam, Mohammad Jane; Afroz, Ziya; Rodrigues, Vítor Hugo Nunes; Ahmad, Shabbir

2018-03-01

The present work is focused on the crystal structure, vibrational spectroscopy and DFT calculations of hydrogen bonded 2,3-pyrazinedicorboxylic acid and 2-amino-4-hydroxy-6-methylpyrimidine (PDCA-.AHMP+) crystal. The crystal structure has been determined using single crystal X-ray diffraction analysis which shows that the crystal belongs to monoclinic space group P21/n. The PDCA-.AHMP+ crystal has been characterized by FTIR, FT-Raman and FT-NMR spectroscopic techniques. The FTIR and FT-Raman spectra of the complex have unique spectroscopic feature as compared with those of the starting material to confirm salt formation. The theoretical vibrational studies have been performed to understand the modes of the vibrations of asymmetric unit of the complex by DFT methods. Hirschfeld surface and 2D fingerprint plots analyses were carried out to investigate the intermolecular interactions and its contribution in the building of PDCA-.AHMP+ crystal. The experimental and simulated 13C and 1H NMR studies have assisted in structural analysis of PDCA-.AHMP+ crystal. The electronic spectroscopic properties of the complex were explored by the experimental as well as theoretical electronic spectra simulated using TD-DFT/IEF-PCM method at B3LYP/6-311++G (d,p) level of theory. In addition, frontier molecular orbitals, molecular electrostatic potential map (MEP) and nonlinear optical (NLO) properties using DFT method have been also presented.

Physical and chemical properties of YBa2Cu3O7 thin films

International Nuclear Information System (INIS)

El-Samahi, M.I.

1991-12-01

Investigations were carried out to determine the influence of different annealing processes on the superconducting properties of the YBa 2 Cu 3 O 7 thin films. The samples were produced by means of coevaporation of Cu, Y and Ba on polycrystalline yttria stabilized (YSZ) ZrO 2 and single crystal SrTiO 3 (001) substrates. Subsequently, the as-deposited films were subjected to two different annealing methods to crystallize the superconducting phase YBa 2 Cu 3 O 7 : (i) heating up, annealing and cooling in an oxygen atmosphere and (ii) heating up in an innert gas atmosphere up to the maximum annealing temperature (T max ) and then annealing and cooling under oxygen. (orig.)

Synthesis and magnetic properties of single-crystalline BaFe12O19 nanoparticles

International Nuclear Information System (INIS)

Yu Jiangying; Tang Shaolong; Zhai Lin; Shi Yangguang; Du Youwei

2009-01-01

Rod-like and platelet-like nanoparticles of simple-crystalline barium hexaferrite (BaFe 12 O 19 ) have been synthesized by the molten salt method. Both particle size and morphology change with the reaction temperature and time. The easy magnetization direction (0 0 l) of the BaFe 12 O 19 nanoparticles has been observed directly by performing X-ray diffraction on powders aligned at 0.5 T magnetic field. The magnetic properties of the BaFe 12 O 19 magnet were investigated with various sintering temperatures. The maximum values of saturation magnetization (σ s =65.8 emu/g), remanent magnetization (σ r =56 emu/g) and coercivity field (H ic =5251 Oe) of the aligned samples occurred at the sintering temperatures of 1100 deg. C. These results indicate that BaFe 12 O 19 nanoparticles synthesized by the molten salt method should enable detailed investigation of the size-dependent evolution of magnetism, microwave absorption, and realization of a nanodevice of magnetic media.

Ultra-fast scintillation properties of β-Ga2O3 single crystals grown by Floating Zone method

Science.gov (United States)

He, Nuotian; Tang, Huili; Liu, Bo; Zhu, Zhichao; Li, Qiu; Guo, Chao; Gu, Mu; Xu, Jun; Liu, Jinliang; Xu, Mengxuan; Chen, Liang; Ouyang, Xiaoping

2018-04-01

In this investigation, β-Ga2O3 single crystals were grown by the Floating Zone method. At room temperature, the X-ray excited emission spectrum includes ultraviolet and blue emission bands. The scintillation light output is comparable to the commercial BGO scintillator. The scintillation decay times are composed of the dominant ultra-fast component of 0.368 ns and a small amount of slightly slow components of 8.2 and 182 ns. Such fast component is superior to most commercial inorganic scintillators. In contrast to most semiconductor crystals prepared by solution method such as ZnO, β-Ga2O3 single crystals can be grown by traditional melt-growth method. Thus we can easily obtain large bulk crystals and mass production.

Enhanced moments of Eu in single crystals of the metallic helical antiferromagnet EuCo2 -yAs2

Science.gov (United States)

Sangeetha, N. S.; Anand, V. K.; Cuervo-Reyes, Eduardo; Smetana, V.; Mudring, A.-V.; Johnston, D. C.

2018-04-01

The compound EuCo2 -yAs2 with the tetragonal ThCr2Si2 structure is known to contain Eu+2 ions with spin S =7/2 that order below a temperature TN≈47 K into an antiferromagnetic (AFM) proper helical structure with the ordered moments aligned in the tetragonal a b plane, perpendicular to the helix axis along the c axis, with no contribution from the Co atoms. Here we carry out a detailed investigation of the properties of single crystals. We consistently find about 5% vacancies on the Co site from energy-dispersive x-ray analysis and x-ray diffraction refinements. Enhanced ordered and effective moments of the Eu spins are found in most of our crystals. Electronic structure calculations indicate that the enhanced moments arise from polarization of the d bands, as occurs in ferromagnetic Gd metal. Electrical resistivity measurements indicate metallic behavior. The low-field in-plane magnetic susceptibilities χa b(T theory (MFT), and the Eu-Eu exchange interactions Ji j are extracted from the fits. High-field magnetization M data for magnetic fields H ∥a b reveal what appears to be a first-order spin-flop transition followed at higher field by a second-order metamagnetic transition of unknown origin, and then by another second-order transition to the paramagnetic (PM) state. For H ∥c , the magnetization shows only a second-order transition from the canted AFM to the PM state, as expected. The critical fields for the AFM to PM transition are in approximate agreement with the predictions of MFT. Heat capacity Cp measurements in zero and high H are reported. Phase diagrams for H ∥c and H ∥a b versus T are constructed from the high-field M (H ,T ) and Cp(H ,T ) measurements. The magnetic part Cmag(T ,H =0 ) of Cp(T ,H =0 ) is extracted and is fitted rather well below TN by MFT, although dynamic short-range AFM order is apparent in Cmag(T ) up to about 70 K, where the molar entropy attains its high-T limit of R ln8 .

Single crystals of the anisotropic Kagome staircase compounds Ni3V2O8 and Co3V2O8

OpenAIRE

Balakrishnan, G.; Petrenko, O. A.; Lees, M. R.; Paul, D. McK.

2004-01-01

Compounds with a Kagome type lattice are known to exhibit magnetic frustration. Large single crystals of two compounds Ni3V2O8 and Co3V2O8, which are variants of a Kagome net lattice, have been grown successfully by the floating zone technique using an optical image furnace. The single crystals are of high quality and exhibit intriguing magnetic properties.

Electrical conductivity and dielectric properties of TlInS2 single crystals

Science.gov (United States)

El-Nahass, M. M.; Youssef, S. B.; Ali, H. A. M.; Hassan, A.

2011-07-01

TlInS2 single crystals were grown by using Bridgman-Stockbauer technique. Measurements of DC conductivity were carried out in parallel (σ//) and perpendicular (σ⊥) directions to the c-axis over a temperature range from 303 to 463 K. The anisotropic behaviour of the electrical conductivity was also detected. AC conductivity and dielectric measurements were studied as a function of both frequency (102-106 Hz) and temperature (297-375 K). The frequency dependence of the AC conductivity revealed that σac(ω) obeys the universal law: σac(ω) = Aωs. The mechanism of the ac charge transport across the layers of TlInS2 single crystals was referred to the hopping over localized states near the Fermi level in the frequency range >3.5 × 103 Hz. The temperature dependence of σac(ω) for TlInS2 showed that σac is thermally activated process. Both of ɛ1 and ɛ2 decrease by increasing frequency and increase by increasing temperature. Some parameters were calculated as: the density of localized states near the Fermi level NF = 1.5 × 1020 eV-1 cm-3, the average time of charge carrier hoping between localized states τ = 3.79 μs and the average hopping distance R = 6.07 nm.

Multiple superconducting gaps in MgB2 single crystals from magnetic torque

International Nuclear Information System (INIS)

Atsumi, Toshiyuki; Xu, Mingxiang; Kitazawa, Hideaki; Ishida, Takekazu

2004-01-01

We have measured the magnetic torque of an MgB 2 single crystal in the various different fields below 10 kG by using a torque magnetometer and a 4 K closed cycle refrigerator. The MgB 2 single crystal was synthesized by the vapor transport method. The torque can be measured as an off-balance signal of the Wheatstone bridge of the four piezoresistors on a Si cantilever. The torque curves are analyzed by the Kogan model. The superconducting anisotropy γ is rather independent of temperature in 5 and 10 kG, but is dependent on field up to 60 kG. We consider that the field dependence of γ comes from the nature of the multiple superconducting gaps. The experimental results show that the π-band superconducting gaps have been deteriorated gradually up to a crossover field H * (π) ∼ 20 kG at 10 K when the magnetic field increases

Hall coefficients and optical properties of La/sub 2-//sub x/Sr/sub x/CuO4 single-crystal thin films

International Nuclear Information System (INIS)

Suzuki, M.

1989-01-01

The low-field Hall coefficient R/sub H/, optical reflectance and transmittance of the La/sub 2-//sub x/Sr/sub x/CuO 4 system with various Sr concentrations from x = 0 to 0.36 are systematically studied using single-crystal thin films epitaxially grown on (100) face SrTiO 3 substrates with the c axis normal to the film surface. For the x range measured, R/sub H/ is positive and decreases more rapidly than that expected from the Sr concentration but more slowly than reported earlier for polycrystalline specimens, indicating anisotropy of R/sub H/. Furthermore, the x dependence indicates deviation from that expected from a simple band model. Within the superconducting composition range, R/sub H/ exhibits characteristic temperature dependence. The optical reflectance spectrum changes from that of a semiconductor at x = 0 to a typical metallic one characterized by the Drude model for x>0.1, indicating the development of itinerant holes in the Cu-O planes. In the optical transmission spectra, an anomalous absorption band is seen in addition to the fundamental absorption corresponding to an energy gap of about 2 eV. This band, which develops with Sr doping, implies an enhancement of the density of states near the Fermi level. Taking these observations into account, the normal-state transport properties are explained with a qualitative consistence

Structural study of intermediate phase in layered perovskite SrBi sub 2 Ta sub 2 O sub 9 single crystal

CERN Document Server

Onodera, A; Yamashita, H

2003-01-01

The crystal structure of an intermediate phase of Bi-layered ferroelectric SrBi sub 2 Ta sub 2 O sub 9 single crystals was studied by means of X-ray diffraction. An analysis of the extinction rules and X-ray intensities demonstrated that the crystal structure is orthorhombic with space group A2 sub 1 am in the ferroelectric phase and Amam in the intermediate phase; this conclusion is in good agreement with the findings of previous powder neutron diffraction studies.

Heterogeneous activation of H_2O_2 by defect-engineered TiO_2_−_x single crystals for refractory pollutants degradation: A Fenton-like mechanism

International Nuclear Information System (INIS)

Zhang, Ai-Yong; Lin, Tan; He, Yuan-Yi; Mou, Yu-Xuan

2016-01-01

Highlights: • Facet- and defect-engineered TiO_2 is proposed for water treatment as Fenton-like catalyst. • The =Ti(III) center serves as lattice shuttle for electron transfer in H_2O_2 activation. • TiO_2 is promising due to low cost, high abundance, no toxicity and stable performance. - Abstract: The heterogeneous catalyst plays a key role in Fenton-like reaction for advanced oxidation of refractory pollutants in water treatment. Titanium dioxide (TiO_2) is a typical semiconductor with high industrial importance due to its earth abundance, low cost and no toxicity. In this work, it is found that TiO_2 can heterogeneously activate hydrogen peroxide (H_2O_2, E° = 1.78 eV), a common chemical oxidant, to efficiently generate highly-powerful hydroxyl radical, ·OH (E"0 = 2.80 eV), for advanced water treatment, when its crystal shape, exposed facet and oxygen-stoichiometry are finely tuned. The defect-engineered TiO_2 single crystals exposed by high-energy {0 0 1} facets exhibited an excellent Fenton-like activity and stability for degrading typical refractory organic pollutants such as methyl orange and p-nitrophenol. Its defect-centered Fenton-like superiority is mainly attributed to the crystal oxygen-vacancy, single-crystalline structure and exposed polar {0 0 1} facet. Our findings could provide new chance to utilize TiO_2 for Fenton-like technology, and develop novel heterogeneous catalyst for advanced water treatment.

Polarized Raman scattering study of PSN single crystals and epitaxial thin films

Directory of Open Access Journals (Sweden)

J. Pokorný

2015-06-01

Full Text Available This paper describes a detailed analysis of the dependence of Raman scattering intensity on the polarization of the incident and inelastically scattered light in PbSc0.5Nb0.5O3 (PSN single crystals and epitaxially compressed thin films grown on (100-oriented MgO substrates. It is found that there are significant differences between the properties of the crystals and films, and that these differences can be attributed to the anticipated structural differences between these two forms of the same material. In particular, the scattering characteristics of the oxygen octahedra breathing mode near 810 cm-1 indicate a ferroelectric state for the crystals and a relaxor state for the films, which is consistent with the dielectric behaviors of these materials.

Synthesis and Single Crystal Structures of Substituted-1,3-Selenazol-2-amines

Directory of Open Access Journals (Sweden)

Guoxiong Hua

2016-12-01

Full Text Available The synthesis and X-ray single crystal structures of a series of new 4-substituted-1,3-selenazol-2-amines is reported. The efficient preparation of these compounds was carried out by two-component cyclization of the selenoureas with equimolar amounts of α-haloketones. The selenoureas were obtained from the reaction of Woollins’ reagent with cyanamides, followed by hydrolysis with water. All new compounds have been characterized by IR spectroscopy, multi-NMR (1H, 13C, 77Se spectroscopy, accurate mass measurement and single crystal X-ray structure analysis.

Enhancement of Jc of MgB2 thin films by introduction of oxygen during deposition

International Nuclear Information System (INIS)

Mori, Zon; Doi, Toshiya; Hakuraku, Yoshinori; Kitaguchi, Hitoshi

2006-01-01

The introduction of various pinning center are examined as the effective means for improvement of J c of MgB 2 thin films. We have investigated the effects of introduction of oxygen during deposition on the superconducting properties of MgB 2 thin films. MgB 2 thin films were prepared on polished sapphire C(0001) single crystal substrates by using electron beam evaporation technique (EB) without any post-annealing. The background pressure was less than 1.3x10 -6 Pa. The evaporation flux ratio of Mg was set at 30 times as high as that of B, and the growth rate of MgB 2 film was 1nm/s. The film thickness was typically 300nm at 5min deposition. The substrate temperature was 245 deg. C. Under these conditions, we controlled the oxygen partial pressure (P O 2 ) within the range from 1.3x10 -6 to 1.3x10 -3 Pa by using a quadrapole mass spectrometer. Although T c of deposited thin film decreased in order of P O 2 , ΔM in the magnetization hysteresis loops measured from 0 to 6T at 4.2K increased up to 1.3x10 -5 . On the other hand, thin film prepared under P O 2 of 1.3x10 -3 Pa does not show superconducting transition. Between these films, there is no difference in the crystal structure from X-ray diffraction (XRD). These results suggest that the pinning center in the thin films increased by introduction of oxygen. Extremely small amount of oxygen introduction has enabled the control of growth of oxide

Growth and characterization of an organic single crystal: 2-[2-(4-Diethylamino-phenyl)-vinyl]-1-methyl-pyridinium iodide

Science.gov (United States)

Senthil, K.; Kalainathan, S.; Ruban Kumar, A.

Optically transparent crystal of the organic salt DEASI (2-[2-(4-Diethylamino-phenyl)-vinyl]-1-methyl-pyridinium iodide) has been synthesized by using knoevenagel condensation reaction method. The synthesized material has been purified by successfully recrystallization process. Single crystals of DEASI have been grown by slow evaporation technique at room temperature. The solubility of the title material has been determined at different temperature in acetonitrile/methanol mixture. The cell parameters and crystallinity of the title crystal were determined by single crystal XRD. The powder diffraction was carried out to study the reflection plane of the grown crystal and diffraction peaks were indexed. The presence of different functional groups in the crystal was confirmed by Fourier transform infrared (FTIR) analysis. 1H NMR spectrum was recorded to confirm the presence of hydrogen nuclei in the synthesized material. The optical property of the title crystal was studied by UV-Vis-NIR spectroscopic analysis. The melting point and thermal property of DEASI were studied using TGA/DSC technique. The Vicker’s hardness (Hv) was carried out to know the category. The dielectric constant and dielectric loss of the compound decreases with an increase in frequencies. Chemical etching studies showed that the DEASI grows in the two dimensional growth mechanisms. The Kurtz-Perry powder second harmonic generation (SHG) test has done for title crystal.

Growth and characterization of an organic single crystal: 2-[2-(4-diethylamino-phenyl)-vinyl]-1-methyl-pyridinium iodide.

Science.gov (United States)

Senthil, K; Kalainathan, S; Ruban Kumar, A

2014-05-05

Optically transparent crystal of the organic salt DEASI (2-[2-(4-Diethylamino-phenyl)-vinyl]-1-methyl-pyridinium iodide) has been synthesized by using knoevenagel condensation reaction method. The synthesized material has been purified by successfully recrystallization process. Single crystals of DEASI have been grown by slow evaporation technique at room temperature. The solubility of the title material has been determined at different temperature in acetonitrile/methanol mixture. The cell parameters and crystallinity of the title crystal were determined by single crystal XRD. The powder diffraction was carried out to study the reflection plane of the grown crystal and diffraction peaks were indexed. The presence of different functional groups in the crystal was confirmed by Fourier transform infrared (FTIR) analysis. (1)H NMR spectrum was recorded to confirm the presence of hydrogen nuclei in the synthesized material. The optical property of the title crystal was studied by UV-Vis-NIR spectroscopic analysis. The melting point and thermal property of DEASI were studied using TGA/DSC technique. The Vicker's hardness (Hv) was carried out to know the category. The dielectric constant and dielectric loss of the compound decreases with an increase in frequencies. Chemical etching studies showed that the DEASI grows in the two dimensional growth mechanisms. The Kurtz-Perry powder second harmonic generation (SHG) test has done for title crystal. Copyright © 2014 Elsevier B.V. All rights reserved.

Temperature dependence of the defect luminescence in La2Be2O5 single crystals

International Nuclear Information System (INIS)

Ogorodnikov, I.N.; Pustovarov, V.A.

2015-01-01

Temperature quenching (TQ) curves in the temperature range of 80–500 K have been studied for both the undoped, and doped with RE 3+ -ions (RE = Ce, Eu, Er, Pr, Nd) lanthanum beryllate (BLO) single crystals. Photoluminescence spectra and TQ-curves were recorded upon excitation in the absorption bands of the lattice defects. The reaction rate model has been developed to describe the experimental results. The model includes two competing processes with characteristic temperatures: thermal quenching of intracenter PL (T 1 ) and thermally stimulated migration of electronic excitations (T 2 ). The competition between these two processes leads to the observed non-monotonic TQ-curves. The rationalized formulas using three parameters (intensity, activation energy, characteristic temperature), were developed to describe each of these processes. Within the framework of the unified model, all the experimental results were described and the best fit parameters were obtained. Classification of the investigated lanthanum beryllate crystals was carried out in line with the best fit parameters obtained for the TQ-curves. - Highlights: • We studied La 2 Be 2 O 5 (BLO) single crystals (pristine and RE 3+ -doped). • We studied PL emission spectra of defects in BLO and BLO:RE 3+ . • Temperature quenching of the defect PL emission was studied at 80–500 K. • We developed the reaction rate model to describe non-monotonic TQ-curves. • TQ-curves were parameterized for BLO, BLO:RE 3+ (RE = Ce, Pr, Eu, Nd, Er).

Single crystal growth and surface chemical stability of KPb2Br5

Science.gov (United States)

Atuchin, V. V.; Isaenko, L. I.; Kesler, V. G.; Tarasova, A. Yu.

2011-03-01

Single crystal of KPb2Br5 has been grown using the Bridgman technique. Initially the synthesis of stoichiometric KPb2Br5 compound was performed from high purity bromide salts. Electronic structure of KPb2Br5 has been determined with X-ray photoelectron spectroscopy for powdered sample fabricated by grinding in air. Drastic chemical interaction of KPb2Br5 with atmosphere has not been detected. Chemical bonding in potassium- and lead-containing bromides is considered using binding energy differences ΔK=(BE K 2p3/2-BE Br 3d) and ΔPb=(BE Pb 4f7/2-BE Br 3d), respectively, as representative parameters.

Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

Energy Technology Data Exchange (ETDEWEB)

Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.; Trapeznikova, I. N.; Bobyl, A. V.; Terukova, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2017-01-15

The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A model of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.

Upper critical fields in Ba2Ti2Fe2As4O single crystals: Evidence for dominant Pauli paramagnetic effect

Science.gov (United States)

Abdel-Hafiez, M.; Brisbois, J.; Zhu, Z.; Adamski, A.; Hassen, A.; Vasiliev, A. N.; Silhanek, A. V.; Krellner, C.

2018-03-01

We report on magneto-optical imaging and the temperature dependency of the upper critical fields Hc2 c(T ) parallel to the c axis and Hc2 a b(T ) parallel to the a b plane in Ba2Ti2Fe2As4O single crystals. These data were inferred from the measurements of the temperature-dependent resistance in static magnetic fields up to 14 T and magnetoresistance in pulsed fields up to 60 T. Hc 2 values are found to be 52 and 50 T for H ∥a b and H ∥c , respectively. These values are 1.2-1.35 times larger than the weak-coupling Pauli paramagnetic limit (Hp˜1.84 Tc ), indicating that enhanced paramagnetic limiting is essential and this superconductor is unconventional. Our observations of strong bending in the Hc2 a b(T ) curves and a nearly isotropic maximum upper critical field Hc2 a b(0 ) ≈Hc2 c(0 ) support the presence of a strong Pauli paramagnetic effect. We show that the Werthamer-Helfand-Hohenberg (WHH) formula that includes the spin-orbit scattering can effectively describe the Hc2 a b(T ) curve, whereas Hc 2 deviates from the conventional WHH theoretical model without considering the spin paramagnetic effect for the H ∥c and H ∥a b directions. For H ∥c , a two-band model is required to fully reproduce the behavior of Hc 2, while for H ∥a b the spin paramagnetic effect is responsible for the behavior of Hc 2. The anisotropy of Hc 2 is close to 3 near Tc and decreases rapidly at lower temperatures.

Crystal-field analysis of U3+ ions in K2LaX5 (X=Cl, Br or I) single crystals

Science.gov (United States)

Karbowiak, M.; Edelstein, N.; Gajek, Z.; Drożdżyński, J.

1998-11-01

An analysis of low temperature absorption spectra of U3+ ions doped in K2LaX5 (X=Cl, Br or I) single crystals is reported. The energy levels of the U3+ ion in the single crystals were assigned and fitted to a semiempirical Hamiltonian representing the combined atomic and crystal-field interactions at the Cs symmetry site. An analysis of the nephelauxetic effect and crystal-field splittings in the series of compounds is also reported.

Redetermination of eveite, Mn2AsO4(OH, based on single-crystal X-ray diffraction data

Directory of Open Access Journals (Sweden)

Yongbo W. Yang

2011-12-01

Full Text Available The crystal structure of eveite, ideally Mn2(AsO4(OH [dimanganese(II arsenate(V hydroxide], was refined from a single crystal selected from a co-type sample from Långban, Filipstad, Varmland, Sweden. Eveite, dimorphic with sarkinite, is structurally analogous with the important rock-forming mineral andalusite, Al2OSiO4, and belongs to the libethenite group. Its structure consists of chains of edge-sharing distorted [MnO4(OH2] octahedra (..2 symmetry extending parallel to [001]. These chains are cross-linked by isolated AsO4 tetrahedra (..m symmetry through corner-sharing, forming channels in which dimers of edge-sharing [MnO4(OH] trigonal bipyramids (..m symmetry are located. In contrast to the previous refinement from Weissenberg photographic data [Moore & Smyth (1968. Am. Mineral. 53, 1841–1845], all non-H atoms were refined with anisotropic displacement parameters and the H atom was located. The distance of the donor and acceptor O atoms involved in hydrogen bonding is in agreement with Raman spectroscopic data. Examination of the Raman spectra for arsenate minerals in the libethenite group reveals that the position of the peak originating from the O—H stretching vibration shifts to lower wavenumbers from eveite, to adamite, zincolivenite, and olivenite.

DETERMINATION OF VICKERS MICROHARDNESS IN β-Ga2O3 SINGLE CRYSTALS GROWN FROM THEIR OWN MELT

Directory of Open Access Journals (Sweden)

L. I. Guzilova

2015-05-01

Full Text Available The results of microhardness measurements of β-Ga2O3 single crystals for (001 crystallographic face are reported. The crystals were grown by the free crystallization with the "Garnet-2M" equipment. Microhardness values ​​ were determined by the Vickers method at varying loads. A four-sided diamond pyramid was used as an indenter. The average value of gallium oxide microhardness was equal to 8.91 GPa. We have carried out comparison of the values ​​obtained with the microhardness for the other wide bandgap semiconductors - epitaxial GaN layers grown on 6H-SiC and GaP layers grown on GaP:S. The findings are usable for machining process development of β-Ga2O3 single crystal substrates. In particular, silicon carbide and electrocorundum may be recommended for β-Ga2O3 machine processing.

Plastic deformation of single crystals of WSi2 with the C11b structure

International Nuclear Information System (INIS)

Ito, K.; Yano, T.; Nakamoto, T.; Inui, H.; Yamaguchi, M.

1999-01-01

The deformation behavior of single crystals of WSi 2 has been investigated as a function of crystal orientation in the temperature range from room temperature to 1500 C in compression. Single crystals of WSi 2 can be deformed only at high temperatures above 1100 C, in contrast to MoSi 2 in which plastic flow is possible even at room temperature. Four slip systems, {110} left-angle 111 right-angle, {011} left-angle 100 right-angle, {023} left-angle 100 right-angle and (001)left-angle 100 right-angle, are identified. While the former three slip systems are operative also in MoSi 2 , the (001)left-angle 100 right-angle slip is only operative in WSi 2 . The (001)left-angle 100 right-angle slip in WSi 2 is the alternative to {013} left-angle 331 right-angle slip in MoSi 2 since they are operative in the same orientation range. Slip on {110} left-angle 331 right-angle is hardly observed in WSi 2 . The values of critical resolved shear stress (CRSS) for the commonly observed slip systems are much higher in WSi 2 than in MoSi 2 with the largest difference for {110} left-angle 111 right-angle slip. The higher CRSS values in WSi 2 are not only due to the intrinsic difference in the deformation behavior but also due to the existence of numerous grown-in stacking faults on (001)

Optical energy gaps and photoluminescence peaks of BaGa2S4:Er3+ and BaGa2Se4:Er3+ single crystals

International Nuclear Information System (INIS)

Choe, Sung-Hyu; Jin, Moon-Seog; Kim, Wha-Tek

2005-01-01

BaGa 2 S 4 :Er 3+ and BaGa 2 Se 4 :Er 3+ single crystals were grown by using the chemical transport reaction method. The optical energy gaps of the BaGa 2 S 4 :Er 3+ and the BaGa 2 Se 4 :Er 3+ single crystals were found to be 4.045 eV and 3.073 eV, respectively, at 11 K. The temperature dependence of the optical energy gap was well fitted by the Varshni equation. Sharp emission peaks were observed in the photoluminescence spectra of the single crystals and assigned to radiation recombination between split Stark levels of the Er 3+ ion.

Formation of SmFe5(0001) ordered alloy thin films on Cu(111) single-crystal underlayers

International Nuclear Information System (INIS)

Yabuhara, Osamu; Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

SmFe 5 (0001) single-crystal thin films are prepared by molecular beam epitaxy employing Cu(111) single-crystal underlayers on MgO(111) substrates. The Cu atoms diffuse into the Sm-Fe layer and substitute the Fe sites in SmFe 5 structure forming an alloy compound of Sm(Fe,Cu) 5 . The Sm(Fe,Cu) 5 film is more Cu enriched with increasing the substrate temperature. The Cu underlayer plays an important role in assisting the formation of the ordered phase.

Ultralow Self-Doping in 2D Hybrid Perovskite Single Crystals

KAUST Repository

Peng, Wei

2017-06-28

Unintentional self-doping in semiconductors through shallow defects is detrimental to optoelectronic device performance. It adversely affects junction properties and it introduces electronic noise. This is especially acute for solution-processed semiconductors, including hybrid perovskites, which are usually high in defects due to rapid crystallization. Here, we uncover extremely low self-doping concentrations in single crystals of (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1 (n=1, 2, and 3)—over three orders of magnitude lower than those of typical three-dimensional hybrid perovskites—by analyzing their conductivity behavior. We propose that crystallization of hybrid perovskites containing large organic cations suppresses defect formation and thus favors a low self-doping level. To exemplify the benefits of this effect, we demonstrate extraordinarily high light-detectivity (1013 Jones) in (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1 photoconductors due to the reduced electronic noise, which makes them particularly attractive for the detection of weak light signals. Furthermore, the low self-doping concentration reduces the equilibrium charge carrier concentration in (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1, advantageous in the design of p-i-n heterojunction solar cells by optimizing band alignment and promoting carrier depletion in the intrinsic perovskite layer, thereby enhancing charge extraction.

Grain Boundaries Act as Solid Walls for Charge Carrier Diffusion in Large Crystal MAPI Thin Films.

Science.gov (United States)

Ciesielski, Richard; Schäfer, Frank; Hartmann, Nicolai F; Giesbrecht, Nadja; Bein, Thomas; Docampo, Pablo; Hartschuh, Achim

2018-03-07

Micro- and nanocrystalline methylammonium lead iodide (MAPI)-based thin-film solar cells today reach power conversion efficiencies of over 20%. We investigate the impact of grain boundaries on charge carrier transport in large crystal MAPI thin films using time-resolved photoluminescence (PL) microscopy and numerical model calculations. Crystal sizes in the range of several tens of micrometers allow for the spatially and time resolved study of boundary effects. Whereas long-ranged diffusive charge carrier transport is observed within single crystals, no detectable diffusive transport occurs across grain boundaries. The observed PL transients are found to crucially depend on the microscopic geometry of the crystal and the point of observation. In particular, spatially restricted diffusion of charge carriers leads to slower PL decay near crystal edges as compared to the crystal center. In contrast to many reports in the literature, our experimental results show no quenching or additional loss channels due to grain boundaries for the studied material, which thus do not negatively affect the performance of the derived thin-film devices.

X-ray detection capability of a Cs2ZnCl4 single-crystal scintillator

International Nuclear Information System (INIS)

Yahaba, Natsuna; Koshimizu, Masanori; Sun, Yan; Asai, Keisuke; Yanagida, Takayuki; Fujimoto, Yutaka; Haruki, Rie; Nishikido, Fumihiko; Kishimoto, Shunji

2014-01-01

The X-ray detection capability of a scintillation detector equipped with a Cs 2 ZnCl 4 single crystal was evaluated. The scintillation decay kinetics can be expressed as the sum of two exponential decay components. The fast decay component had a decay time constant of 1.8 ns, and its relative intensity was 95%. The total light output was 630 photons/MeV, and a subnanosecond timing resolution of 0.66 ns was obtained. The detection efficiency of 67.4 keV X-rays was 80% for a detector equipped with a 2.2-mm-thick Cs 2 ZnCl 4 crystal. Thus, excellent timing resolution and high detection efficiency were achieved simultaneously. (author)

Scalable Fabrication of Integrated Nanophotonic Circuits on Arrays of Thin Single Crystal Diamond Membrane Windows.

Science.gov (United States)

Piracha, Afaq H; Rath, Patrik; Ganesan, Kumaravelu; Kühn, Stefan; Pernice, Wolfram H P; Prawer, Steven

2016-05-11

Diamond has emerged as a promising platform for nanophotonic, optical, and quantum technologies. High-quality, single crystalline substrates of acceptable size are a prerequisite to meet the demanding requirements on low-level impurities and low absorption loss when targeting large photonic circuits. Here, we describe a scalable fabrication method for single crystal diamond membrane windows that achieves three major goals with one fabrication method: providing high quality diamond, as confirmed by Raman spectroscopy; achieving homogeneously thin membranes, enabled by ion implantation; and providing compatibility with established planar fabrication via lithography and vertical etching. On such suspended diamond membranes we demonstrate a suite of photonic components as building blocks for nanophotonic circuits. Monolithic grating couplers are used to efficiently couple light between photonic circuits and optical fibers. In waveguide coupled optical ring resonators, we find loaded quality factors up to 66 000 at a wavelength of 1560 nm, corresponding to propagation loss below 7.2 dB/cm. Our approach holds promise for the scalable implementation of future diamond quantum photonic technologies and all-diamond photonic metrology tools.

Room temperature ferromagnetism in Fe-doped semiconductor ZrS2 single crystals

Science.gov (United States)

Muhammad, Zahir; Lv, Haifeng; Wu, Chuanqiang; Habib, Muhammad; Rehman, Zia ur; Khan, Rashid; Chen, Shuangming; Wu, Xiaojun; Song, Li

2018-04-01

Two dimensional (2D) layered magnetic materials have obtained much attention due to their intriguing properties with a potential application in the field of spintronics. Herein, room-temperature ferromagnetism with 0.2 emu g‑1 magnetic moment is realized in Fe-doped ZrS2 single crystals of millimeter size, in comparison with diamagnetic behaviour in ZrS2. The electron paramagnetic resonance spectroscopy reveals that 5.2wt% Fe-doping ZrS2 crystal exhibit high spin value of g-factor about 3.57 at room temperature also confirmed this evidence, due to the unpaired electrons created by doped Fe atoms. First principle static electronic and magnetic calculations further confirm the increased stability of long range ferromagnetic ordering and enhanced magnetic moment in Fe-doped ZrS2, originating from the Fe spin polarized electron near the Fermi level.

Thermoluminescence characteristics of Li2B4O7 single crystal dosimeters doped with Mn

International Nuclear Information System (INIS)

Ekdal, E.; Karalı, T.; Kelemen, A.; Ignatovych, M.; Holovey, V.; Harmansah, C.

2014-01-01

In this study, thermoluminescence (TL) characterization of newly developed Li 2 B 4 O 7 :Mn single crystal phosphor is reported. It is a very attractive material in personal dosimetry because of its near tissue equivalency (Z eff =7.25). The crystal was grown by the Czochralski method from high purity compounds. Glow curve, dose response, and fading and reproducibility properties of this material were investigated. Its TL glow curve showed two well separated peaks at about 105 and 220 °C with a heating rate of 2 °C s −1 . The main peak at 220 °C has a linear dose response of up to 60 Gy. The thermal fading ratio of the material is about 8% for the main peak in 10 days. The results showed that there is no significant variation of TL responses for 15 sequential measurements. Apart from the dosimetric properties above, the TL kinetic parameters of the main peak at 220 °C of Li 2 B 4 O 7 :Mn single crystal phosphor were also calculated using the various heating rates method. Activation energy and frequency factor were found as 1.21 eV and 3.75×10 11 s −1 , respectively. - Highlights: • Li 2 B 4 O 7 :Mn single crystal was investigated in terms of TL characteristics. • The material shows highly satisfactory dosimetric properties. • Various heating rates method was used for determining the kinetic parameter

Optical probes of symmetry breaking in magnetic and superconducting BaFe2(As1-xPx)2

Science.gov (United States)

Orenstein, Joseph

The discovery of iron pnictide superconductors has opened promising new directions in the effort to fully understand the phenomenon of high-Tc, with a focus on the connections between superconductivity, magnetism, and electronic nematicity. The BaFe2(As1-xPx)2 (P:Ba122) system in particular has received attention because isovalent substitution of As for P generates less disorder than doping on the Fe site. The phase diagram of P:Ba122 is characterized by a line of simultaneous antiferromagnetic (AF) and tetragonal-to-orthorhombic transitions, Ts (x) , that penetrates the superconducting dome at x =0.28, just below optimal doping (xopt = 0.30). In this work, we use spatially-resolved optical polarimetry and photomodulated reflectance to detect linear birefringence and therefore breaking of 4-fold rotational (C4) symmetry. In underdoped (xTsand grows continuously with decreasing T . The birefringence is unidirectional in a large (300 μm x300 μm) field of view, suggesting that C4 breaking in this range of T is caused by residual strain that couples to a diverging nematic susceptibility. Birefringence maps just below Ts (x) show the appearance of domains, indicating the onset of spontaneous symmetry breaking to an AF ground state. Surprisingly, in samples with x>0.28, in which the low T phase is superconducting/ tetragonal rather than AF/orthorhombic, C4 breaking is observed as well, with an abrupt onset and domain formation at 55 K. We tentatively associate these features with a transition to an AF phase induced by residual strain, as previously proposed [H.-H. Kuo et al. Phys. Rev. B86, 134507 (2012)] to account for structure in resistivity vs. T. Time-resolved photomodulation allow us to follow the amplitude of the AF order with time following pulsed photoexcitation. Below Tc the AF order at first weakens , but then strengthens in response to the photoinduced weakening of superconductivity. This complex time evolution is accounted for quantitatively by a model

Micro-Raman spectroscopy studies of bulk and thin films of CuInTe2

International Nuclear Information System (INIS)

Ananthan, M R; Mohanty, Bhaskar Chandra; Kasiviswanathan, S

2009-01-01

Micro-Raman spectroscopy measurements were made on polycrystalline and amorphous thin films of CuInTe 2 as well as bulk polycrystalline CuInTe 2 . Various vibrational modes exhibited by the bulk and polycrystalline thin films were attributed to those expected for single crystal CuInTe 2 . Raman spectra of amorphous films presented a broad spectrum, decomposition of which revealed the presence of elemental tellurium on the film surface. Laser-induced changes on CuInTe 2 thin films were studied by acquiring spectra with higher laser beam power. Modes due to tellurium appeared when the spectra were acquired during laser–sample interaction, indicating tellurium segregation. The Raman spectra measured from polycrystalline films during high laser power irradiation did not show decrease in the intensity of the A 1 mode of CuInTe 2 in spite of loss of tellurium from the lattice. This has been interpreted as related to an increased contribution from the undistorted subsurface CuInTe 2 region at higher excitation power

Helium release from neutron-irradiated Li{sub 2}O single crystals

Energy Technology Data Exchange (ETDEWEB)

Yamaki, Daiju; Tanifuji, Takaaki; Noda, Kenji [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

1998-03-01

Helium release behavior in post-irradiation heating tests was investigated for Li{sub 2}O single crystals which had been irradiated with thermal neutrons in JRR-4 and JRR-2, and fast neutrons in FFTF. It is clarified that the helium release curves from JRR-4 and JRR-2 specimens consists of only one broad peak. From the dependence of the peak temperatures on the neutron fluence and the crystal diameter, and the comparison with the results obtained for sintered pellets, it is considered that the helium generated in the specimen is released through the process of bulk diffusion with trapping by irradiation defects such as some defect clusters. For the helium release from FFTF specimens, two broad peaks were observed in the release curves. It is considered to suggest that two different diffusion paths exist for helium migration in the specimen, that is, bulk diffusion and diffusion through the micro-crack due to the heavy irradiation. In addition, helium bubble formation after irradiation due to the high temperature over 800K is suggested. (J.P.N.)

High temperature microhardness of ZrB2 single crystals

International Nuclear Information System (INIS)

Yi Xuan; Chen Chunhua; Otani, Shigeki

2002-01-01

Vickers microhardness of (0001), (101-bar 0) and (112-bar 0) planes of ZrB 2 single crystal prepared by the floating zone method has been investigated at various temperatures and loading times. As the temperature increases from 25 deg. C to 1000 deg. C, hardness drops from ∼20.9 GN m -2 of all planes to ∼7.85 GN m -2 for (0001) plane and ∼4.91 GN m -2 for (101-bar 0) and (112-bar 0) planes. The hardness of (101-bar 0) and (112-bar 0) planes exhibits almost same tendency and is always lower than that of (0001) plane by about 35%. The thermal softening coefficients of all three planes strongly depends on the temperature range with clear inflections at 400 deg. C and 700 deg. C. The loading time dependence of hardness is used to calculate the activation energy for creep. In addition, a relationship was found that shows the variation of hardness with temperature to be proportional to the variation with the loading time in a specific temperature range. (rapid communication)

Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates

International Nuclear Information System (INIS)

De Los Santos Valladares, L.; Salinas, D. Hurtado; Dominguez, A. Bustamante; Najarro, D. Acosta; Khondaker, S.I.; Mitrelias, T.; Barnes, C.H.W.; Aguiar, J. Albino; Majima, Y.

2012-01-01

In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO 2 /Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu → Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO was detected. Pure Cu 2 O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300–550 °C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current–voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: ► The crystallization and electrical resistivity of oxides in a Cu films are studied. ► In annealing Cu films, the phase evolution Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO occurs. ► A resistivity phase diagram, obtained from the current–voltage response, is presented. ► Some decreases in the resistivity may be related to the crystallization.

Synthesis, characterization and anti-microbial activity of pure, Cu2+ and Cd2+ doped organic NLO l-arginine trifluoroacetate single crystals

Science.gov (United States)

Prasanyaa, T.; Haris, M.; Jayaramakrishnan, V.; Amgalan, M.; Mathivanan, V.

2013-10-01

Optically transparent Cu2+ and Cd2+ doped l-arginine trifluoroacetate (LATF) single crystals were grown from its aqueous solution using the slow solvent evaporation technique. The grown crystals were characterized by powder x-ray diffraction to confirm the monoclinic crystal structure. The percentage of transmittance measured using the ultraviolet-visible-near infrared spectrophotometer was found to be more than 80% for doped crystals. The functional group analysis of the grown crystals has been made by Fourier transform infrared spectroscopy. Thermogravimetric/differential thermal analysis was performed for the grown crystals. An atomic absorption study was carried out to determine the presence of Cu2+ and Cd2+. The hardness of the grown crystals was assessed and the results show a significant variation in the hardness value between the pure and doped LATF crystals. The second harmonic generation measurements show that Cu2+ doped LATF is 2.8 times greater and Cd2+ doped is 2.6 times greater than KDP. The anti-bacterial and anti-fungal activities of the title compound were performed using the disc diffusion method against standard bacteria Escherichia coli, Xanthomonas oryzae and against the fungus Aspergillus niger and Aspergillus flavus.

Synthesis, characterization and anti-microbial activity of pure, Cu2+ and Cd2+ doped organic NLO l-arginine trifluoroacetate single crystals

International Nuclear Information System (INIS)

Prasanyaa, T; Haris, M; Amgalan, M; Mathivanan, V; Jayaramakrishnan, V

2013-01-01

Optically transparent Cu 2+ and Cd 2+ doped l-arginine trifluoroacetate (LATF) single crystals were grown from its aqueous solution using the slow solvent evaporation technique. The grown crystals were characterized by powder x-ray diffraction to confirm the monoclinic crystal structure. The percentage of transmittance measured using the ultraviolet–visible–near infrared spectrophotometer was found to be more than 80% for doped crystals. The functional group analysis of the grown crystals has been made by Fourier transform infrared spectroscopy. Thermogravimetric/differential thermal analysis was performed for the grown crystals. An atomic absorption study was carried out to determine the presence of Cu 2+ and Cd 2+ . The hardness of the grown crystals was assessed and the results show a significant variation in the hardness value between the pure and doped LATF crystals. The second harmonic generation measurements show that Cu 2+ doped LATF is 2.8 times greater and Cd 2+ doped is 2.6 times greater than KDP. The anti-bacterial and anti-fungal activities of the title compound were performed using the disc diffusion method against standard bacteria Escherichia coli, Xanthomonas oryzae and against the fungus Aspergillus niger and Aspergillus flavus. (paper)

Photoinduced Optical Properties Of Tl1−xIn1−xSixSe2 Single Crystals

Directory of Open Access Journals (Sweden)

Myronchuk G.L.

2015-06-01

Full Text Available The influence of temperature on electroconductivity and photoinduced changes of the absorption at 0.15 eV under influence of the second harmonic generation of CO2 laser for the two type of single crystals were investigated. The single crystals Tl1−xIn1−xSixSe2 (x=0.1 and 0.2 have been grown by the two-zone Bridgaman-Stockbarger method. The temperature studies of electroconductivity were done in cryostat with thermoregulation in the temperature 77 - 300 K, with stabilization ±0.1 K. Photoinduced treatment of the investigated single crystals were performed using the 180 ns pulses second harmonic generation of the CO2 laser operating at 5.3 μm. Experimental studies have shown that for the Tl1−xIn1−xSixSe2 single crystals with decreasing temperature from 300 up to 240 K and from 315 up to 270 K the conductivity is realized by thermally excited impurities with activation energies equal to about 0.24 eV and 0.22 eV for x= 0.1 and 0.2, respectively. Photoinduced absorption achieves its maximum at a power density below 100 mJ/cm2. Has been shown that the samples with x=0.2 demonstrated higher changes of the photoinduced absorption with respect to the x=0.1. With further decreasing temperature is observed monotonic decrease in the activation energy of conductivity. The origin of these effects is caused by the excitations of both the electronic as well as phonon subsystem. At some power densities the anharmonic excitations become dominant and as a consequence the photoinduced absorption dependence is saturated what were observed. Additionally, we were evaluated at given temperature the average jump length of R for localized states near Fermi level.

Temperature dependent tunneling study of CaFe{sub 1.96}Ni{sub 0.04}As{sub 2} single crystals

Energy Technology Data Exchange (ETDEWEB)

Dutta, Anirban, E-mail: adatta@iitk.ac.in; Gupta, Anjan K. [Department of Physics, IIT Kanpur, Kanpur-208 016 (India); Thamizhavel, A. [Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)

2014-04-24

We report on temperature dependent scanning tunneling microscopy and spectroscopy studies on CaFe{sub 1.96}Ni{sub 0.04}As{sub 2} single crystals in 5.4 – 19.7 K temperature range across the normal metal - superconductor transition temperature, T{sub C} = 14K. The in-situ cleaved crystals show reasonably flat surface with signatures of atomic resolution. The tunnel spectra show significant spatial inhomogeneity below T{sub C}, which reduces significantly as the temperature goes above the T{sub C}. We discuss these results in terms of an inhomogeneous electronic phase that may exist due to the vicinity of this composition to the quantum critical point.

Dye sensitized solar cell applications of CdTiO{sub 3}–TiO{sub 2} composite thin films deposited from single molecular complex

Energy Technology Data Exchange (ETDEWEB)

Ehsan, Muhammad Ali [Nanotechnology and Catalysis Centre (NANOCAT), University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Khaledi, Hamid [Department of Chemistry, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Pandikumar, Alagarsamy; Huang, Nay Ming [Department of Physics, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Arifin, Zainudin [Department of Chemistry, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Mazhar, Muhammad, E-mail: mazhar42pk@yahoo.com [Department of Chemistry, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia)

2015-10-15

A heterobimetallic complex [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF (1) (TFA=trifluoroacetato, THF=tetrahydrofuran) comprising of Cd:Ti (1:2) ratio was synthesized by a chemical reaction of cadmium (II) acetate with titanium (IV) isopropoxide and triflouroacetic acid in THF. The stoichiometry of (1) was recognized by single crystal X-ray diffraction, spectroscopic and elemental analyses. Thermal studies revealed that (1) neatly decomposes at 450 °C to furnish 1:1 ratio of cadmium titanate:titania composite oxides material. The thin films of CdTiO{sub 3}–TiO{sub 2} composite oxides were deposited at 550 °C on fluorine doped tin oxide coated conducting glass substrate in air ambient. The micro-structure, crystallinity, phase identification and chemical composition of microspherical architectured CdTiO{sub 3}–TiO{sub 2} composite thin film have been determined by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analysis. The scope of composite thin film having band gap of 3.1 eV was explored as photoanode for dye-sensitized solar cell application. - Graphical abstarct: Microspherical designed CdTiO{sub 3}–TiO{sub 2} composite oxides photoanode film has been fabricated from single source precursor [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF via aerosol assisted chemical vapor deposition technique for dye sensitized solar cell application. - Highlights: • Synthesis and characterization of a heterobimetallic Cd–Ti complex. • Fabrication of CdTiO{sub 3}–TiO{sub 2} thin film photoelectrode. • Application as dye sensitized photoanode for solar application.

Synthesis, Structure, and Rigid Unit Mode-like Anisotropic Thermal Expansion of BaIr2In9.

Science.gov (United States)

Calta, Nicholas P; Han, Fei; Kanatzidis, Mercouri G

2015-09-08

This Article reports the synthesis of large single crystals of BaIr2In9 using In flux and their characterization by variable-temperature single-crystal and synchrotron powder X-ray diffraction, resistivity, and magnetization measurements. The title compound adopts the BaFe2Al9-type structure in the space group P6/mmm with room temperature unit cell parameters a = 8.8548(6) Å and c = 4.2696(4) Å. BaIr2In9 exhibits anisotropic thermal expansion behavior with linear expansion along the c axis more than 3 times larger than expansion in the ab plane between 90 and 400 K. This anisotropic expansion originates from a rigid unit mode-like mechanism similar to the mechanism of zero and negative thermal expansion observed in many anomalous thermal expansion materials such as ZrW2O8 and ScF3.

Stacking fault energy measurements in WSe2 single crystals using weak-beam techniques

International Nuclear Information System (INIS)

Agarwal, M.K.; Patel, J.V.; Patel, N.G.

1981-01-01

The weak-beam method of electron microscopy is used to observe threefold dislocations in WSe 2 single crystals grown by direct vapour transport method. The widths of the three fold ribbons are used to determine the stacking fault energy in these crystals. Variation of the width of the ribbons with temperature are also studied and discussed. (author)

Preparation and characterization of Cu2SnS3 thin films by electrodeposition

Science.gov (United States)

Patel, Biren; Narasimman, R.; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

Cu2SnS3 thin films were electrodeposited on F:SnO2/Glass substrates at room temperature by using aqueous solution. Copper and tin were first electrodeposited from single bath and post annealed in the presence of sulphur atmosphere to obtain the Cu2SnS3 phase. The Cu2SnS3 phase with preferred orientation along the (112) crystal direction grows to greater extent by the post annealing of the film. Raman analysis confirms the monoclinic crystal structure of Cu2SnS3 with principle mode of vibration as A1 (symmetric breathing mode) corresponding to the band at 291 cm-1. It also reveals the benign coexistence of orthorhombic Cu3SnS4 and Cu2SnS7 phases. Optical properties of the film show direct band gap of 1.25 eV with a high absorption coefficient of the order of 104 cm-1 in the visible region. Photo activity of the electrodeposited film was established in two electrode photoelectro-chemical cell, where an open circuit voltage of 91.6 mV and a short circuit current density of 10.6 µA/cm2 were recorded. Fabrication of Cu2SnS3 thin film heterojunction solar cell is underway.

Preparation and properties of KCl-doped Cu2O thin film by electrodeposition

International Nuclear Information System (INIS)

Yu, Xiaojiao; Li, Xinming; Zheng, Gang; Wei, Yuchen; Zhang, Ama; Yao, Binghua

2013-01-01

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu 2 O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu 2 O crystal morphology, thus, making Cu 2 O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu 2 O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu 2 O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu 2 O thin film surface resistivity decreases from the initial 2.5 × 10 6 Ω cm to 8.5 × 10 4 Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10 2 Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

Optical characteristics of BaGa{sub 2}S{sub 4}:Ho{sup 3+} and BaGa{sub 2}Se{sub 4}:Ho{sup 3+} single crystals

Energy Technology Data Exchange (ETDEWEB)

Choe, Sung-Hyu [Chosun University, Kwangju (Korea, Republic of); Jin, Moon-Seog [Dongshin University, Naju (Korea, Republic of); Kim, Wha-Tek [Chonnam National University, Kwangju (Korea, Republic of)

2005-11-15

BaGa{sub 2}S{sub 4}, BaGa{sub 2}S{sub 4}:Ho{sup 3+}, BaGa{sub 2}Se{sub 4}, and BaGa{sub 2}Se{sub 4}:Ho{sup 3+} single crystals were grown by using the chemical transport reaction method. The optical energy gaps of the single crystals were investigated in the temperature region from 11 K to 300 K. The temperature dependence of the optical energy gap was well fitted by the Varshni equation. Two broad emission bands were observed in the photoluminescence spectra of the single crystals. These bands were attributed to donor-acceptor pair recombinations. Sharp emission peaks were observed in the BaGa{sub 2}S{sub 4}:Ho{sup 3+} and the BaGa{sub 2}Se{sub 4}:Ho{sup 3+} single crystals and were assigned to radiation recombination between split Stark levels of Ho{sup 3+}.

EPR and optical absorption studies of paramagnetic molecular ion (VO2+) in Lithium Sodium Acid Phthalate single crystal

Science.gov (United States)

Subbulakshmi, N.; Kumar, M. Saravana; Sheela, K. Juliet; Krishnan, S. Radha; Shanmugam, V. M.; Subramanian, P.

2017-12-01

Electron Paramagnetic Resonance (EPR) spectroscopic studies of VO2+ ions as paramagnetic impurity in Lithium Sodium Acid Phthalate (LiNaP) single crystal have been done at room temperature on X-Band microwave frequency. The lattice parameter values are obtained for the chosen system from Single crystal X-ray diffraction study. Among the number of hyperfine lines in the EPR spectra only two sets are reported from EPR data. The principal values of g and A tensors are evaluated for the two different VO2+ sites I and II. They possess the crystalline field around the VO2+ as orthorhombic. Site II VO2+ ion is identified as substitutional in place of Na1 location and the other site I is identified as interstitial location. For both sites in LiNaP, VO2+ are identified in octahedral coordination with tetragonal distortion as seen from the spin Hamiltonian parameter values. The ground state of vanadyl ion in the LiNaP single crystal is dxy. Using optical absorption data the octahedral and tetragonal parameters are calculated. By correlating EPR and optical data, the molecular orbital bonding parameters have been discussed for both sites.

Transport properties of RCo_2B_2C with R = Dy, Ho, and Pr single

Science.gov (United States)

Duran, Alejandro; Escudero, Roberto

2002-03-01

Single crystals of (Dy, Ho, Pr)Co_2B_2C have been grown by a cold copper crucible method. Metallurgical and structural studies indicate that this borocarbide family melts incongruently and crystallizes as a derivative structure of the ThCr_2Si_2. The family accepts rare earth atoms depending on the type of transition metals used to form the compound. For instance with Ni atoms, all lanthanides ranging from the large lanthanum to lutetium ions are reported to form RNi_2B_2C single crystals, so far no single crystals have been obtained when changing Ni by Cobalt. A comparison of the structural parameters of the RCo_2B_2C with the RNiHo, Pr) compounds indicate that the atomic distance between transition metal atoms contracts with the insertion of the Co ion, resulting in an increasing of the c parameter and decreasing volume. Several recent reports published in the current literature related on the physical properties of RCo_2B_2C (R = rare earth metals and Y) have been only performed on polycrystalline samples, they commonly contain small amounts of second phases. High quality single crystals are necessaries in order to better understand the physical properties, such as anisotropy in the transport and in the magnetic properties. In this report we show magnetic susceptibility and resistivity measurements performed in single crystals in the ab-plane and c direction for 2 - 320 K temperature range for the three single crystals of (Dy, Ho, Pr)Co_2B_2C.

Research Update: Structural and transport properties of (Ca,La)FeAs{sub 2} single crystal

Energy Technology Data Exchange (ETDEWEB)

Caglieris, F.; Pallecchi, I.; Lamura, G.; Putti, M. [CNR-SPIN and Università di Genova, Via Dodecaneso 33, I-16146 Genova (Italy); Sala, A. [CNR-SPIN and Università di Genova, Via Dodecaneso 33, I-16146 Genova (Italy); Department of Applied Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-8656 (Japan); National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565 (Japan); Fujioka, M. [National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047 (Japan); Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Hummel, F.; Johrendt, D. [Ludwig-Maximilians-Universität München, Department Chemie, Butenandtstr. 5-13, 81377 München (Germany); Takano, Y. [National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047 (Japan); Ishida, S.; Iyo, A.; Eisaki, H. [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565 (Japan); Ogino, H.; Yakita, H. [Department of Applied Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-8656 (Japan); Shimoyama, J. [Department of Applied Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics and Mathematics, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara 252-5258 (Japan)

2016-02-01

Structural and transport properties in the normal and superconducting states are investigated in a Ca{sub 0.8}La{sub 0.2}FeAs{sub 2} single crystal with T{sub c} = 27 K, belonging to the newly discovered 112 family of iron based superconductors. The transport critical current density J{sub c} for both field directions measured in a focused ion beam patterned microbridge reveals a weakly field dependent and low anisotropic behaviour with a low temperature value as high as J{sub c}(B = 0) ∼ 10{sup 5} A/cm{sup 2}. This demonstrates not only bulk superconductivity but also the potential of 112 superconductors towards applications. Interestingly, this superconducting compound undergoes a structural transition below 100 K which is evidenced by temperature-dependent X-ray diffraction measurements. Data analysis of Hall resistance and magnetoresistivity indicate that magnetotransport properties are largely dominated by an electron band, with a change of regime observed in correspondence of the onset of a structural transition. In the low temperature regime, the contribution of a hole band to transport is suggested, possibly playing a role in determining the superconducting state.

Anatase TiO2 single crystals with dominant {0 0 1} facets: Synthesis, shape-control mechanism and photocatalytic activity

Science.gov (United States)

Tong, Huifen; Zhou, Yingying; Chang, Gang; Li, Pai; Zhu, Ruizhi; He, Yunbin

2018-06-01

Anatase TiO2 micro-crystals with 51% surface exposing highly active {0 0 1} facets are prepared by hydrothermal synthesis using TiF4 as Ti resource and HF as morphology control agent. In addition, anatase TiO2 single crystals exposing large {0 0 1} crystal facets are facilely synthesized with "green" NaF plus HCl replacing HF for the morphology control. A series of comparative experiments are carried out for separately studying the effects of F- and H+ concentrations on the growth of TiO2 crystals, which have not been understood very much in depth so far. The results indicate that both F- and H+ synergistically affect the synthesis of truncated anatase octahedrons, where F- is preferentially adsorbed on the {0 0 1} facets resulting in lateral growth of these facets and H+ adjusts the growth rate of anatase TiO2 along different orientations by tuning the hydrolysis rate. Based on this information, anatase TiO2 single crystals with small size (1.3 μm) and large exposure of {0 0 1} facets (45%) are successfully prepared under optimal conditions ([H+]/[F-] = 20:1). Photocatalytic activities of the as-prepared products toward methylene blue photo-degradation are further tested. It is revealed that both crystal size and percentage of {0 0 1} facets are decisive for the photocatalytic performance, and the crystals with a small size (1.3 μm) and large exposure of {0 0 1} facets (45%) are catalytically most active. This work has clarified the main factors that control the growth process and morphology of anatase TiO2 single crystals for achieving superior photocatalytic properties.

Specific heat of ceramic and single crystal MgB{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Junod, A.; Wang, Y.; Bouquet, F.; Sheikin, I.; Toulemonde, P.; Eskildsen, M.R.; Eisterer, M.; Weber, H.W.; Lee, S.; Tajima, S

2003-05-15

The two-gap structure of MgB{sub 2} gives rise to unusual thermodynamic properties which depart markedly from the single-gap BCS model, both in their temperature- and field-dependence. We report measurements of the specific heat up to 16 T on ceramic and single crystal samples, which demonstrate these effects in bulk. The low-temperature mixed-state specific heat reveals a field-dependent anisotropy, and points to the existence of unusually large vortices, in agreement with local density-of-states measurements by scanning tunneling spectroscopy. It is finally shown that a suitable irradiation process nearly doubles H{sub c2} in the bulk.

Epitaxial Growth of Permalloy Thin Films on MgO Single-Crystal Substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Tanaka, Takahiro; Matsubara, Katsuki; Futamoto, Masaaki; Kirino, Fumiyoshi

2011-01-01

Permalloy (Py: Ni - 20 at. % Fe) thin films were prepared on MgO single-crystal substrates of (100), (110), and (111) orientations by molecular beam epitaxy. Py crystals consisting of fcc(100) and hcp(112-bar 0) orientations epitaxially nucleate on MgO(100) substrates. With increasing the substrate temperature, the volume ratio of fcc(100) to hcp(112-bar 0) crystal increases. The metastable hcp(112-bar 0) structure transforms into more stable fcc(110) structure with increasing the film thickness. Py(110) fcc single-crystal films are obtained on MgO(110) substrates, whereas Py films epitaxially grow on MgO(111) substrates with two types of fcc(111) variants whose orientations are rotated around the film normal by 180 deg. each other. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of these fcc-Py films agree within ±0.4% with the values of bulk fcc-Py crystal, suggesting that the strains in the films are very small. High-resolution transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the films around the Py/MgO(100) and the Py/MgO(110) interfaces to reduce the lattice mismatches. The magnetic properties are considered to be reflecting the magnetocrystalline anisotropies of bulk fcc-Py and/or metastable hcp-Py crystals and the shape anisotropy caused by the surface undulations.

Epitaxial Growth of Permalloy Thin Films on MgO Single-Crystal Substrates

Energy Technology Data Exchange (ETDEWEB)

Ohtake, Mitsuru; Tanaka, Takahiro; Matsubara, Katsuki; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: ohtake@futamoto.elect.chuo-u.ac.jp [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

2011-07-06

Permalloy (Py: Ni - 20 at. % Fe) thin films were prepared on MgO single-crystal substrates of (100), (110), and (111) orientations by molecular beam epitaxy. Py crystals consisting of fcc(100) and hcp(112-bar 0) orientations epitaxially nucleate on MgO(100) substrates. With increasing the substrate temperature, the volume ratio of fcc(100) to hcp(112-bar 0) crystal increases. The metastable hcp(112-bar 0) structure transforms into more stable fcc(110) structure with increasing the film thickness. Py(110){sub fcc} single-crystal films are obtained on MgO(110) substrates, whereas Py films epitaxially grow on MgO(111) substrates with two types of fcc(111) variants whose orientations are rotated around the film normal by 180 deg. each other. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of these fcc-Py films agree within {+-}0.4% with the values of bulk fcc-Py crystal, suggesting that the strains in the films are very small. High-resolution transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the films around the Py/MgO(100) and the Py/MgO(110) interfaces to reduce the lattice mismatches. The magnetic properties are considered to be reflecting the magnetocrystalline anisotropies of bulk fcc-Py and/or metastable hcp-Py crystals and the shape anisotropy caused by the surface undulations.

Performance study of single undoped CsI crystals for the Mu2e experiment

International Nuclear Information System (INIS)

Donghia, R.

2016-01-01

The Mu2e experiment at Fermilab aims to measure the neutrinoless muon-to-electron conversion, which is a charged-lepton flavor-violating process. The goal of the experiment is to reach a single event sensitivity of 2.5 × 10"−"1"7, to set an upper limit on the muon conversion rate at 6.7 × 10"−"1"7 in a three-year run. For this purpose, the Mu2e detector is designed to identify electrons from muon conversion and reduce the background to a negligible level. It consists of a low-mass straw tracker and a pure CsI crystal calorimeter. In this paper, the performance of undoped CsI single crystal is reported. Crystals from many vendors have been characterized by determining their Light Yield (LY) and Longitudinal Response Uniformity (LRU), when read with a UV extended PMT, and their time resolution when coupled to a silicon photomultiplier. The crystals show a LY of ∼ 100 photoelectrons per MeV when wrapped with Tyvek and coupled to the PMT without optical grease. The LRU is well represented by a linear slope that is on average 0.6%/cm. Both measurements have been performed using a "2"2Na source. The timing performance has been evaluated exploiting cosmic rays, with MPPC readout. A timing resolution lower than 400 ps has been achieved (at ∼ 20 MeV, which is the energy released by a minimum ionizing particle in the crystal).

Crystal Growth of Ca3Nb(Ga1−xAlx3Si2O14 Piezoelectric Single Crystals with Various Al Concentrations

Directory of Open Access Journals (Sweden)

Yuui Yokota

2015-08-01

Full Text Available Ca3Nb(Ga1−xAlx3Si2O14 (CNGAS single crystals with various Al concentrations were grown by a micro-pulling-down (µ-PD method and their crystal structures, chemical compositions, crystallinities were investigated. CNGAS crystals with x = 0.2, 0.4 and 0.6 indicated a single phase of langasite-type structure without any secondary phases. In contrast, the crystals with x = 0.8 and 1 included some secondary phases in addition to the langasite-type phase. Lattice parameters, a- and c-axes lengths, of the langasite-type phase systematically decreased with an increase of Al concentration. The results of chemical composition analysis revealed that the actual Al concentrations in as-grown crystals were almost consistent with the nominal compositions. In addition, there was no large segregation of each cation along the growth direction.

Theoretical studies of the optical and EPR spectra for VO^{2+} in Na_3C_6H_5O_7·2H_2O single crystal

Directory of Open Access Journals (Sweden)

Ch.-Y. Li

2015-06-01

Full Text Available On the basis of the perturbation formulas for a d^1 configuration ion in a tetragonal crystal field, the three optical absorption bands and electron paramagnetic resonance (EPR parameters (g factors g_i and hyperfine structure constants A_i for i = || and ⊥, respectively of VO^{2+} in Na_3C_6H_5O_7·2H_2O (TSCD single crystals were studied using the perturbation theory method. By simulating the calculated optical and EPR spectra to the observed values, local structure parameters and negative signs of the hyperfine structure constants A_i of the octahedral (VO_6^{8-} cluster in TSCD single crystal can be obtained.

Growth and physicochemical properties of second-order nonlinear optical 2-amino-5-chloropyridinium trichloroacetate single crystals

Science.gov (United States)

Renugadevi, R.; Kesavasamy, R.

2015-09-01

The growth of organic nonlinear optical (NLO) crystal 2-amino-5-chloropyridinium trichloroacetate (2A5CPTCA) has been synthesized and single crystals have been grown from methanol solvent by slow evaporation technique. The grown crystals were subjected to various characterization analyses in order to find out the suitability for device fabrication. Single crystal X-ray diffraction analysis reveals that 2A5CPTCA crystallizes in monoclinic system with the space group Cc. The grown crystal was further characterized by Fourier transform infrared spectral analysis to find out the functional groups. The nuclear magnetic resonance spectroscopy is a research technique that exploits the magnetic properties of certain atomic nuclei. The optical transparency window in the visible and near-IR (200--1100 nm) regions was found to be good for NLO applications. Thermogravimetric analysis and differential thermal analysis were used to study its thermal properties. The powder second harmonic generation efficiency measurement with Nd:YAG laser (1064 nm) radiation shows that the highest value when compared with the standard potassium dihydrogen phosphate crystal.

Raman scattering and x-ray diffractometry studies of epitaxial TiO2 and VO2 thin films and multilayers on α-Al2O3(11 bar 20)

International Nuclear Information System (INIS)

Foster, C.M.; Chiarello, R.P.; Chang, H.L.M.; You, H.; Zhang, T.J.; Frase, H.; Parker, J.C.; Lam, D.J.

1993-01-01

Epitaxial thin films of TiO 2 and VO 2 single layers and TiO 2 /VO 2 multilayers were grown on (11 bar 20) sapphire (α-Al 2 O 3 ) substrates using the metalorganic chemical vapor deposition technique and were characterized using Raman scattering and four x-ray diffractometry. X-ray diffraction results indicate that the films are high quality single crystal material with well defined growth plane and small in-plane and out-of-plane mosaic. Single-layer films are shown to obey the Raman selection rules of TiO 2 and VO 2 single crystals. The close adherence to the Raman selection rules indicates the high degree of orientation of the films, both parallel and perpendicular to the growth plane. Selection rule spectra of two and three layer TiO 2 /VO 2 multilayers are dominated by the VO 2 layers with only minimal signature of the TiO 2 layers. Due to the low band gap of semiconducting vanadium dioxide, we attribute the strong signature of the VO 2 layers to resonant enhancement of the VO 2 Raman component accompanied with absorption of the both the incident and scattered laser light from the TiO 2 layers

Single-crystal study of the charge density wave metal LuNiC2

Science.gov (United States)

Steiner, S.; Michor, H.; Sologub, O.; Hinterleitner, B.; Höfenstock, F.; Waas, M.; Bauer, E.; Stöger, B.; Babizhetskyy, V.; Levytskyy, V.; Kotur, B.

2018-05-01

We report on single-crystal growth, single-crystal x-ray diffraction, physical properties, and density functional theory (DFT) electronic structure as well as Fermi surface calculations for two ternary carbides, LuCoC2 and LuNiC2. Electrical resistivity measurements reveal for LuNiC2 a charge density wave (CDW) transition at TCDW≃450 K and, for T >TCDW , a significant anisotropy of the electrical resistivity, which is lowest along the orthorhombic a axis. The analysis of x-ray superstructure reflections suggest a commensurate CDW state with a Peierls-type distortion of the Ni atom periodicity along the orthorhombic a axis. DFT calculations based on the CDW modulated monoclinic structure model of LuNiC2 as compared to results of the orthorhombic parent type reveal the formation of a partial CDW gap at the Fermi level which reduces the electronic density of states from N (EF)=1.03 states/eV f.u. without CDW to N (EF)=0.46 states/eV f.u. in the CDW state. The corresponding bare DFT Sommerfeld value of the latter, γDFTCDW=0.90 mJ/mol K2, reaches reasonable agreement with the experimental value γ =0.83 (5 ) mJ/mol K2 of LuNiC2. LuCoC2 displays a simple metallic behavior with neither CDW ordering nor superconductivity above 0.4 K. Its experimental Sommerfeld coefficient, γ =5.9 (1) mJ/mol K2, is in realistic correspondence with the calculated, bare Sommerfeld coefficient, γDFT=3.82 mJ/mol K2, of orthorhombic LuCoC2.

The crystal structure and luminescence quenching of poly- and single-crystalline KYW{sub 2}O{sub 8}:Tb{sup 3+}

Energy Technology Data Exchange (ETDEWEB)

Schwung, Sebastian [Fachbereich Chemieingenieurwesen, Fachhochschule Münster, Stegerwaldstraße 39, 48565 Steinfurt (Germany); Rytz, Daniel, E-mail: rytz@fee-io.de [Forschungsinstitut für mineralische und metallische Werkstoffe-Edelsteine/ Edelmetalle-GmbH (FEE), Struthstraße 2, 55743 Idar-Oberstein (Germany); Heying, Birgit; Rodewald, Ute Ch.; Niehaus, Oliver [Institut für Anorganische und Analytische Chemie, Universität Münster, Corrensstrasse 30 48149 Münster (Germany); Enseling, David [Fachbereich Chemieingenieurwesen, Fachhochschule Münster, Stegerwaldstraße 39, 48565 Steinfurt (Germany); Jüstel, Thomas, E-mail: tj@fh-muenster.de [Fachbereich Chemieingenieurwesen, Fachhochschule Münster, Stegerwaldstraße 39, 48565 Steinfurt (Germany); Pöttgen, Rainer, E-mail: pottgen@uni-muenster.de [Institut für Anorganische und Analytische Chemie, Universität Münster, Corrensstrasse 30 48149 Münster (Germany)

2015-10-15

Terbium-substituted KYW{sub 2}O{sub 8} single crystals of high optical quality were grown by the top seeded solution growth technique. The degree of yttrium–terbium mixed occupancy was determined for two samples through structure refinements on the basis of single crystal X-ray diffractometer data. Temperature dependent magnetic susceptibility data underline the paramagnetic nature of terbium doped crystals. No magnetic ordering is evident down to 2 K. Luminescence measurements yield the typical excitation and emission spectra as expected for Tb{sup 3+} activated materials. The decay time of Tb{sup 3+} decreases linearly with the Tb{sup 3+} concentration, while the excess of thermal quenching does not change significantly. At about 405 K the decay time is reduced by roughly 50% relative to the low-temperature value, both for the powders as for the single crystals. - Highlights: • Single crystalline and powder series of K(Y,Tb)W{sub 2}O{sub 8.} • Refined XRD data of high quality crystals. • Linear decrease of the decay time with Tb{sup 3+} content.

Crystal structure of ethyl 2-(diethoxyphosphoryl-2-(2,3,4-trimethoxyphenylacetate

Directory of Open Access Journals (Sweden)

Moritz Schubert

2014-09-01

Full Text Available The title compound, C17H27O8P, was prepared by Michaelis–Arbuzov reaction of ethyl 2-bromo-2-(2,3,4-trimethoxyphenylacetate and triethyl phosphite. Such compounds rarely crystallize, but single crystals were recovered after the initial oil was left for approximately 10 years. The bond angle of the sp3-hybridized C atom connecting the benzene derivative with the phospho unit is widened marginally [112.5 (2°]. The terminal P—O bond length of 1.464 (2 Å clearly indicates a double bond, whereas the two O atoms of the ethoxy groups connected to the phosphorous atom have bond lengths of 1.580 (2 Å and 1.581 (3 Å. The three methoxy groups emerge out of the benzene-ring plane due to steric hindrance [C—C—O—C torsion angles = −179.9 (3°, −52.9 (4° and 115.3 (4°]. In the crystal, inversion dimers linked by pairs of C—H...O=P hydrogen bonds generate R22(14 loops. The chosen crystal was modelled as a non-merohedral twin.