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Sample records for back contact solar cells

  1. Solar cell with back side contacts

    Energy Technology Data Exchange (ETDEWEB)

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J; Wanlass, Mark Woodbury; Clews, Peggy J

    2013-12-24

    A III-V solar cell is described herein that includes all back side contacts. Additionally, the positive and negative electrical contacts contact compoud semiconductor layers of the solar cell other than the absorbing layer of the solar cell. That is, the positive and negative electrical contacts contact passivating layers of the solar cell.

  2. Hybrid emitter all back contact solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Loscutoff, Paul; Rim, Seung

    2016-04-12

    An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

  3. Screen printed interdigitated back contact solar cell

    Science.gov (United States)

    Baraona, C. R.; Mazaris, G. A.; Chai, A. T. (Inventor)

    1984-01-01

    Interdigitated back contact solar cells are made by screen printing dopant materials onto the back surface of a semiconductor substrate in a pair of interdigitated patterns. These dopant materials are then diffused into the substrate to form junctions having configurations corresponding to these patterns. Contacts having configurations which match the patterns are then applied over the junctions.

  4. Ion Implanted Passivated Contacts for Interdigitated Back Contacted Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Reedy, Robert; Bateman, Nicholas; Stradins, Pauls

    2015-06-14

    We describe work towards an interdigitated back contacted (IBC) solar cell utilizing ion implanted, passivated contacts. Formation of electron and hole passivated contacts to n-type CZ wafers using tunneling SiO2 and ion implanted amorphous silicon (a-Si) are described. P and B were ion implanted into intrinsic amorphous Si films at several doses and energies. A series of post-implant anneals showed that the passivation quality improved with increasing annealing temperatures up to 900 degrees C. The recombination parameter, Jo, as measured by a Sinton lifetime tester, was Jo ~ 14 fA/cm2 for Si:P, and Jo ~ 56 fA/cm2 for Si:B contacts. The contact resistivity for the passivated contacts, as measured by TLM patterns, was 14 milliohm-cm2 for the n-type contact and 0.6 milliohm-cm2 for the p-type contact. These Jo and pcontact values are encouraging for forming IBC cells using ion implantation to spatially define dopants.

  5. Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact

    Science.gov (United States)

    Mount, Michael; Duarte, Fernanda; Paudel, Naba; Yan, Yanfa; Wang, Weining

    Cadmium Telluride (CdTe) solar cell is one of the most promising thin film solar cells and its highest efficiency has reached 21%. To keep improving the efficiency of CdTe solar cells, a few issues need to be addressed, one of which is the back contact. The back contact of CdTe solar cells are mostly Cu-base, and the problem with Cu-based back contact is that Cu diffuses into the grain boundary and into the CdS/CdTe junction, causing degradation problem at high temperature and under illumination. To continue improving the efficiency of CdTe/CdS solar cells, a good ohmic back contact with high work function and long term stability is needed. In this work, we report our studies on the potential of conducting polymer being used as the back contact of CdTe/CdS solar cells. Conducting polymers are good candidates because they have high work functions and high conductivities, are easy to process, and cost less, meeting all the requirements of a good ohmic back contact for CdTe. In our studies, we used poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) with different conductivities and compared them with traditional Cu-based back contact. It was observed that the CdTe solar cell performance improves as the conductivity of the PEDOT:PSS increase, and the efficiency (9.1%) is approaching those with traditional Cu/Au back contact (12.5%). Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact.

  6. Thin foil silicon solar cells with coplanar back contacts

    Science.gov (United States)

    Ho, F.; Iles, P. A.; Baraona, C. R.

    1981-01-01

    To fabricate 50 microns thick, coplanar back contact (CBC) silicon solar cells, wraparound junction design was selected and proved to be effective. The process sequence used, the cell design, and the cell performance are described. CBC cells with low solar absorptance have shown AMO efficiencies to 13%, high cells up to 14%; further improvements are projected with predictable optimization.

  7. Study of Back Contacts for CdTe Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    ZnTe/ZnTe∶Cu layer is used as a complex back contact. The parameters of CdTe solar cells with and without the complex back contacts are compared. The effects of un-doped layer thickness, doped concentration and post-deposition annealing temperature of the complex layer on solar cells performance are investigated.The results show that ZnTe/ZnTe∶Cu layer can improve back contacts and largely increase the conversion efficiency of CdTe solar cells. Un-doped layer and post-deposition annealing of high temperature can increase open voltage. Using the complex back contact, a small CdTe cell with fill factor of 73.14% and conversion efficiency of 12.93% is obtained.

  8. Coplanar back contacts for thin silicon solar cells

    Science.gov (United States)

    Storti, G.; Scheinine, A.; Whitehouse, D.; Wohlgemuth, J.; Wrigley, C.; Giuliano, M.

    1981-01-01

    The type of coplanar back contact solar cell described was constructed with interdigitated n(+) and p(+) type regions on the back of the cell, such that both contacts are made on the back with no metallization grid on the front. This cell construction has several potential advantages over conventional cells for space use namely, convenience of interconnects, lower operating temperatures and higher efficiency due to the elimination of grid shadowing. However, the processing is more complex, and the cell is inherently more radiation sensitive. The latter problem can be reduced substantially by making the cells very thin (approximately 50 micrometers). Two types of interdigitated back contact cells are possible, the types being dependent on the character of the front surface. The front surface field cell has a front surface region that is of the same conductivity type as the bulk but is more heavily doped. This creates an electric field at the surface which repels the minority carriers. The tandem junction cell has a front surface region of a conductivity type that is opposite to that of the bulk. The junction thus created floats to open circuit voltage on illumination and injects carriers into the bulk which then can be collected at the rear junction. For space use, the front surface field cell is potentially more radiation resistant than the tandem junction cell because the flow of minority carriers (electrons) into the bulk will be less sensitive to the production of recombination centers, particularly in the space charge region at the front surface.

  9. Behavior of interdigitated back-contact solar cells

    Science.gov (United States)

    Cheng, L. J.; Leung, D. C.

    1980-01-01

    This paper presents experimental data concerning operation mechanisms of two versions of interdigitated back-contact solar cells: the tandem junction cell and the front-surface field cell. It is shown that a photogenerated forward bias at the front junction of a tandem junction cell is a critical parameter for cell performance which not only causes photogenerated carriers to migrate to the back junction, but also eliminates the reduction in photoresponse over back p(+) metallization regions. However, no similar light effects are observed in the performance of front-surface field cells. Finally, a discussion on mechanisms concerning the performance of front-surface field and tandem junction cells along with their merits is given.

  10. Simulation of interdigitated back contact solar cell with trench structure

    Science.gov (United States)

    Kim, Soo Min; Chun, Seungju; Kang, Min Gu; Song, Hee-Eun; Lee, Jong-Han; Boo, Hyunpil; Bae, Soohyun; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan

    2015-02-01

    We performed two-dimensional technology computer-aided design simulations for interdigitated back contact (IBC) solar cells with rear trench structures (TS), denoted here as TS-IBC solar cells. First, we calculated a reference simulation model for conventional IBC solar cells. We then assumed a trench structure at the rear surface of the IBC solar cell. For this structure, we analyzed solar cell performance as a function of various trench depths and type. It was found that emitter trench formation affects minority carrier collection, such that the short-circuit current density increases with increasing trench depth. However, the back-surface field (BSF) trench exhibited poor minority carrier collection, which reduced the conversion efficiency of the TS-IBC solar cells. It was also found that for the same trench depth (30 μm), the difference in conversion efficiencies of an IBC solar cell with an emitter trench and that with a BSF trench was 0.6%. We are thus convinced that the emitter trench structure is more important than the BSF trench structure.

  11. Interdigitated back contact solar cell with high-current collection

    Energy Technology Data Exchange (ETDEWEB)

    Garner, C. M.; Nasby, R. D.; Sexton, F. W.; Rodriguez, J. L.; Norwood, D. P.

    1981-01-01

    Internal current-collection efficiencies greater than 90 percent and energy-conversion efficiencies of 18 percent at 30 suns have been measured on a laboratory version of the interdigitated back contact (IBC) solar cell. The quantum efficiency at 600 nm was greater than 90 percent which implies a minority carrier lifetime of greater than 350 ..mu..sec and a front surface recombination velocity of less than 30 cm/sec on the better devices. To achieve these high-current collection efficiencies, a phosphorous gettering diffusion was performed on the front surface and then etched off. Also, thermal oxides were grown on the front and back of the cell to passivate the silicon surfaces. Although the internal collection efficiencies of the cell were high, series resistance caused the fill factor (FF) to decrease at concentrations above 30 suns. Dark current measurements on cells with a new grid spacing indicate that the series resistance is much lower than in the previous cell design. This should result in higher efficiencies at high concentration.

  12. Review of Back Contact Silicon Solar Cells for Low-Cost Application

    Energy Technology Data Exchange (ETDEWEB)

    Smith, David D.

    1999-08-04

    Back contact solar cells hold significant promise for increased performance in photovoltaics for the near future. Two major advantages which these cells possess are a lack of grid shading loss and coplanar interconnection. Front contacted cells can have up to 10% shading loss when using screen printed metal grids. A front contact cell must also use solder connections which run from the front of one cell to the back of the next for series interconnection. This procedure is more difficult to automate than the case of co-planar contacts. The back contact cell design is not a recent concept. The earliest silicon solar cell developed by Bell Labs was a back contact device. There have been many design modifications to the basic concept over the years. To name a few, there is the Interdigitated Back Contact (IBC) cell, the Stanford Point contact solar cell, the Emitter Wrap Through (EWT), and its many variations. A number of these design concepts have demonstrated high efficiency. The SunPower back contact solar cell holds the efficiency record for silicon concentrator cells. The challenge is to produce a high efficiency cell at low cost using high throughput techniques. This has yet to be achieved with a back contact cell design. The focus of this paper will be to review the relevant features of back contact cells and progress made toward the goal of a low cost version of this device.

  13. Loss analysis of back-contact back-junction thin-film monocrystalline silicon solar cells

    Science.gov (United States)

    Haase, F.; Eidelloth, S.; Horbelt, R.; Bothe, K.; Garralaga Rojas, E.; Brendel, R.

    2011-12-01

    We investigate power losses in back-contact back-junction monocrystalline thin-film silicon solar cells fabricated using the porous silicon layer transfer process. Our loss analysis combines two-dimensional finite element modeling and resistance network simulations. The input parameters of the finite element modeling are determined experimentally by measuring saturation current densities and sheet resistances on test samples prepared identically to the solar cells. Characteristic solar cell parameters such as short circuit current, open circuit voltage, fill factor, and efficiency of measured and network simulated current voltage characteristics investigated in this study match within an uncertainty of 5%. Free energy loss analysis serves as comparison of all losses in units of power per area at the maximum power point. The largest loss is bulk recombination due to a carrier lifetime of 2 μs in the epitaxial Si layer. Further significant losses result from recombination at the base contacts characterized by a diode saturation current density of 50 000 fA cm-2 as well as resistive losses due to lateral majority carrier current flows within the solar cell base and contact resistance losses.

  14. Back contact buffer layer for thin-film solar cells

    Science.gov (United States)

    Compaan, Alvin D.; Plotnikov, Victor V.

    2014-09-09

    A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

  15. Co-diffused back-contact back-junction silicon solar cells

    International Nuclear Information System (INIS)

    The driving force in photovoltaics is the reduction of the ratio between device costs and conversion efficiency. The present research study introduces a highly innovative diffusion process, called co-diffusion, which allows for a drastic decrease in process costs, on the one hand, and the assembly of a highly efficient solar cell device, the back-contact back-junction (BC-BJ) silicon solar cell, on the other. The co-diffusion approach is based on pre-patterned layers, which contain dopants, deposited by means of plasma enhanced chemical vapor deposition and diffusion in a tube furnace, which contains dopant gases in the process atmosphere. The solar cells are built on n-type silicon which features a high potential in achieving a high silicon life time, which is a necessary requirement of highly efficient BC-BJ solar cells. Fundamental knowledge in terms of co-diffusion processes can be gained from this research study. The processes allow for the fabrication of BC-BJ solar cell devices with a conversion efficiency exceeding 21 %.

  16. Cu2S as ohmic back contact for CdTe solar cells

    International Nuclear Information System (INIS)

    We prepared a back contact for CdTe solar cells with Cu2S as primary contact. Cu2S was evaporated on CdCl2 treated CdTe solar cells in superstrate configuration. The CdTe and CdS layers were deposited by Closed Space Sublimation. Direct interface studies with X-ray photoelectron spectroscopy have revealed a strongly reactive interface between CdTe and Cu2S. A valence band offset of 0.4-0.6 eV has been determined. The performance of solar cells with Cu2S back contacts was studied in comparison to cells with an Au contact that deposited onto a CdCl2-treated CdTe surface that was chemically etched using a nitric-phosphoric etch. The solar cells were analyzed by current-voltage curves and external quantum efficiency measurements. After several post deposition annealing steps, 13% efficiency was reached with the Cu2S back contact, which was significantly higher than the ones obtained for the NP-etched back contacts. - Highlights: • A new back contact for CdTe solar out of Cu2S has been tested. • With a direct interface experiment the valence band offset was determined. • Post deposition heat treatment has been carried out for the solar cells. • 13% efficiency has been reached with the Cu2S back contact

  17. High efficiency back-contact back-junction thin-film monocrystalline silicon solar cells from the porous silicon process

    Science.gov (United States)

    Haase, F.; Kajari-Schröder, S.; Brendel, R.

    2013-11-01

    This work demonstrates the fabrication of a 45 μm thick back-contact back-junction thin-film monocrystalline silicon solar cell from the porous silicon process with an energy conversion efficiency of 18.9%. We demonstrate an efficiency improvement of 5.4% absolute compared to our prior record of 13.5% for back-contact back-junction thin-film monocrystalline silicon solar cells. This increase in efficiency is achieved by reducing the recombination at the base contact using a back surface field and by increasing the generation with a front texture. We investigate the loss mechanisms in the cell using finite element simulations. A free energy loss analysis based on experiments and simulations determines the dominating loss mechanisms. The efficiency loss by base recombination is 0.8% absolute and the loss by base contact recombination is 0.5% absolute in the 18.9% efficiency cell.

  18. High-temperature stability of molybdenum (Mo) back contacts for CIGS solar cells: a route towards more robust back contacts

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Ju-Heon; Yoon, Kwan-Hee; Jeong, Jeung-hyun [Solar Cell Research Center, Korea Institute of Science and Technology, 39-1, Seoul 136-791 (Korea, Republic of); Kim, Won Mok; Park, Jong-Keuk; Baik, Young-Joon [Electronic Materials Research Center, Korea Institute of Science and Technology, 39-1, Seoul 136-791 (Korea, Republic of); Seong, Tae-Yeon, E-mail: jhjeong@kist.re.kr [Department of Materials Science and Engineering, College of Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2011-10-26

    The thermal stability of Mo thin films is indispensable to Cu(In,Ga)Se{sub 2} (CIGS) solar cells: CIGS films are deposited above 500 deg. C. The thermal stabilities of Mo thin films with dense to porous Mo microstructures, which are varied by controlling the sputtering pressure, are investigated. Interface failures are found to occur in buckling mode in denser Mo films, whereas cracking arises in less dense films. The failure modes are apparently dependent on the sign of the residual stress: the former is due to compressive stress, whereas the latter is due to tensile stress. Interestingly, the softening of soda-lime glass at high temperatures reconfigures the film stresses to be more compressive after annealing, which in turn triggers buckling even in films that are tensile-stressed in the as-deposited states. We conclude that the appropriate processing conditions for thermally stable back contacts cannot be obtained with the simple single layer approach. On the basis of this relationship between microstructure, residual stress and the failure modes, it is shown that improvements in film adhesion can widen the processing window for the preparation of robust back contacts, i.e. with a conventional bilayer approach and substrate roughening. Since the bilayer approach employed more compliant porous structures in the bottom layer, back contacts that are better suited to higher stress and temperature can be produced. Furthermore, substrate roughening might make the back contact more conductive as well as more stable because adhesion can be enhanced without the use of an electrically resistive buffer layer.

  19. Method of fabricating a back-contact solar cell and device thereof

    Energy Technology Data Exchange (ETDEWEB)

    Li, Bo; Smith, David; Cousins, Peter

    2016-08-02

    Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

  20. A Simple Sb2Te3 Back-Contact Process for CdTe Solar Cells

    Science.gov (United States)

    Siepchen, B.; Späth, B.; Drost, C.; Krishnakumar, V.; Kraft, C.; Winkler, M.; König, J.; Bartholomé, K.; Peng, S.

    2015-10-01

    CdTe solar technology has proved to be a cost-efficient solution for energy production. Formation of the back contact is an important and critical step in preparing high-efficiency, stable CdTe solar cells. In this paper we report a simple CdTe solar cell (Sb2Te3) back contact-formation process. The CdS and CdTe layers were deposited by close-space sublimation. After CdCl2 annealing treatment, the CdTe surface was etched by use of a mixture of nitric and phosphoric acids to obtain a Te-rich surface. Elemental Sb was sputtered on the etched surface and successive post-annealing treatment induced Sb2Te3 alloy formation. Structural characterization by x-ray diffraction analysis confirmed formation of the Sb2Te3 phase. The performance of solar cells with nanoalloyed Sb2Te3 back contacts was comparable with that of reference solar cells prepared with sputtered Sb2Te3 back contact from a compound sputter target.

  1. Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    CdTe thin film solar cells with a doped-graphite paste back contact layer were studied using admittance spectroscopy technology.The positions and the capture cross sections of energy level in the forbidden band were calculated,which are the important parameters to affect solar cell performance.The results showed that there were three defects in the CdTe thin films solar cells with the doped-graphite paste back contact layer,whose positions in the forbidden band were close to 0.34,0.46 and 0.51 eV,respectively above the valence band,and capture cross sections were 2.23×10-16,2.41×10-14,4.38×10-13 cm2,respectively.

  2. Low resistivity molybdenum thin film towards the back contact of dye-sensitized solar cell

    Indian Academy of Sciences (India)

    Vuong Son; Tran Thi Ha; Luong T Thu Thuy; Nguyen Ngoc Ha; Nguyen Duc Chien; Mai Anh Tuan

    2015-12-01

    This paper reports the optimization of the molybdenum thin film electrode as the back contact of dye-sensitized solar cell (DSSC). The molybdenum thin film was grown on the glass substrate by direct current sputtering techniques of which the sputtering power was 150Wat 18 sccm flow rate of Ar. At such sputtering parameters, the Mo film can reach the lowest resistivity of 1.28E−6 cm at 400 nm thick. And the reflection of Mo membrane was 82%. This value is considered as a very good result for preparation of the back contact of DSSC.

  3. Optimisation of interdigitated back contacts solar cells by two-dimensional numerical simulation

    Energy Technology Data Exchange (ETDEWEB)

    Nichiporuk, O.; Kaminski, A.; Lemiti, M.; Fave, A. [Instituit National des Sciences Appliquees Lyon, Villeurbanne (France). Lab. de Physique de la Matiere; Skryshevsky, V. [National Taras Shevchenko Univ., Kiev (Ukraine). Radiophysics Dept.

    2005-04-01

    In this paper we present the results of the simulation of interdigitated back contacts solar cell on thin-film ({approx}{mu}m) silicon layer. The influence of several parameters (surface recombination rate, substrate thickness and type, diffusion length, device geometry, doping levels) on device characteristics are simulated using the accurate two-dimensional numerical simulator DESSIS that allows to optimise the cell design. (Author)

  4. Back wall solar cell

    Science.gov (United States)

    Brandhorst, H. W., Jr. (Inventor)

    1978-01-01

    A solar cell is disclosed which comprises a first semiconductor material of one conductivity type with one face having the same conductivity type but more heavily doped to form a field region arranged to receive the radiant energy to be converted to electrical energy, and a layer of a second semiconductor material, preferably highly doped, of opposite conductivity type on the first semiconductor material adjacent the first semiconductor material at an interface remote from the heavily doped field region. Instead of the opposite conductivity layer, a metallic Schottky diode layer may be used, in which case no additional back contact is needed. A contact such as a gridded contact, previous to the radiant energy may be applied to the heavily doped field region of the more heavily doped, same conductivity material for its contact.

  5. Physical model of back line-contact front-junction solar cells

    Science.gov (United States)

    Cuevas, Andres

    2013-04-01

    The analysis of advanced front-junction solar cells where the metal contact to the base region is locally formed on the back surface in the shape of lines usually requires numerical simulations. Here, we describe an approach based on a geometric formulation of carrier crowding towards the localized contact, in conjunction with a partition of the device in two distinct regions. This permits a one dimensional analysis of carrier flow, both in the region immediately adjacent to the contact and in the peripheral region surrounding it. The resulting model is simple enough to provide insight into the physics of device operation and reasonably accurate in cases of practical interest. By applying it to different cases, we identify unexpected anomalies and explain them in terms of the peculiar interplay between carrier transport and recombination that takes place in this type of solar cell.

  6. Tuning back contact property via artificial interface dipoles in Si/organic hybrid solar cells

    Science.gov (United States)

    Wang, Dan; Sheng, Jiang; Wu, Sudong; Zhu, Juye; Chen, Shaojie; Gao, Pingqi; Ye, Jichun

    2016-07-01

    Back contact property plays a key role in the charge collection efficiency of c-Si/poly(3,4-ethylthiophene):poly(styrenesulfonate) hybrid solar cells (Si-HSCs), as an alternative for the high-efficiency and low-cost photovoltaic devices. In this letter, we utilize the water soluble poly (ethylene oxide) (PEO) to modify the Al/Si interface to be an Ohmic contact via interface dipole tuning, decreasing the work function of the Al film. This Ohmic contact improves the electron collection efficiency of the rear electrode, increasing the short circuit current density (Jsc). Furthermore, the interface dipoles make the band bending downward to increase the total barrier height of built-in electric field of the solar cell, enhancing the open circuit voltage (Voc). The PEO solar cell exhibits an excellent performance, 12.29% power conversion efficiency, a 25.28% increase from the reference solar cell without a PEO interlayer. The simple and water soluble method as a promising alternative is used to develop the interfacial contact quality of the rear electrode for the high photovoltaic performance of Si-HSCs.

  7. Low-cost multicrystalline back-contact silicon solar cells with screen printed metallization

    International Nuclear Information System (INIS)

    Adaptation to market requirements is a permanent challenge in industrial solar-cell production. Both increase of cell efficiency as well as lowering costs is demanded. Back-contacted solar cells offer multiple advantages in terms of reducing module assembling costs and enhanced cell efficiency. The investigated emitter-wrap-through (EWT) design [1] has a collecting emitter on front and rear side. These emitter areas are electrically connected by small holes. Due to the double-sided collecting junction, this cell design is favourable for materials with a low-minority charge carrier diffusion length leading to a higher short circuit current density. Until now most investigations on EWT solar cells were performed on Cz or even FZ silicon. This was justified as long as different processing techniques had to be developed and compared. But as an industrially applicable process sequence has recently been developed [2], the advantages of the EWT concept compared to conventionally processed cells have to be shown on multicrystalline material. In the following, a manufacturing process of EWT solar cells is presented which is especially adapted to the requirements of multicrystalline silicon. Effective surface texturization was reached by mechanical V-texturization and bulk passivation by a hydrogen plasma treatment. The efficiency of the best solar cells within this process reached 14.2% which is the highest efficiency reported so far for mc-Si 10x10 cm2 EWT solar cells [3]. (author)

  8. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    Science.gov (United States)

    Franken, R. H.-J.

    2006-09-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes

  9. Influence of CuxS back contact on CdTe thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    Lei Zhi; Feng Lianghuan; Zeng Guanggen; Li Wei; Zhang Jingquan; Wu Lili; Wang Wenwu

    2013-01-01

    We present a detailed study on CuxS polycrystalline thin films prepared by chemical bath method and utilized as back contact material for CdTe solar cells.The characteristics of the films deposited on Si-substrate are studied by XRD.The results show that as-deposited CuxS thin film is in an amorphous phase while after annealing,samples are in polycrystalline phases with increasing temperature.The thickness of CuxS thin films has great impact on the performance of CdS/CdTe solar cells.When the thickness of the film is about 75 nm the performance of CdS/CdTe thin film solar cells is found to be the best.The energy conversion efficiency can be higher than 12.19%,the filling factor is higher than 68.82% and the open-circuit voltage is more than 820 mV.

  10. Back-contacted and small form factor GaAs solar cell.

    Energy Technology Data Exchange (ETDEWEB)

    Clews, Peggy Jane; Wanlass, Mark W. (National Renewable Energy Laboratory, Golden, CO); Sanchez, Carlos A.; Pluym, Tammy; Cruz-Campa, Jose Luis; Okandan, Murat; Gupta, Vipin P.; Nielson, Gregory N.; Resnick, Paul James

    2010-07-01

    We present a newly developed microsystem enabled, back-contacted, shade-free GaAs solar cell. Using microsystem tools, we created sturdy 3 {micro}m thick devices with lateral dimensions of 250 {micro}m, 500 {micro}m, 1 mm, and 2 mm. The fabrication procedure and the results of characterization tests are discussed. The highest efficiency cell had a lateral size of 500 {micro}m and a conversion efficiency of 10%, open circuit voltage of 0.9 V and a current density of 14.9 mA/cm{sup 2} under one-sun illumination.

  11. Control of back surface reflectance from aluminum alloyed contacts on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Cudzinovic, M.; Sopori, B. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    A process for forming highly reflective aluminum back contacts with low contact resistance to silicon solar cells is described. By controlling the process conditions, it is possible to vary the silicon/aluminum interface from a specular to a diffuse reflector while maintaining a high interface reflectance. The specular interface is found to be a uniform silicon/aluminum alloy layer a few angstroms thick that has epitaxially regrown on the silicon. The diffuse interface consists of randomly distributed (111) pyramids produced by crystallographic out-diffusion of the bulk silicon. The light trapping ability of the diffuse contact is found to be close to the theoretical limit. Both types of contacts are found to have specific contact resistivities of 10{sup {minus}5} {Omega}-cm{sup 2}. The process for forming the contacts involves illuminating the devices with tungsten halogen lamps. The process is rapid (under 100 s) and low temperature (peak temperature < 580{degrees}C), making it favorable for commercial solar cell fabrication.

  12. Barrier height determination on Schottky contacts formed at the back contact-semiconductor interface of degraded solar cells

    Science.gov (United States)

    Misiakos, K.; Lathrop, J. W.

    A method is described of determining an equivalent circuit for solar cells which have degraded as a result of the formation of a rectifying Schottky barrier at the back contact. An excellent fit of experimental data has been achieved using SCEPTRE with an equivalent circuit derived from the shape of the measured current voltage characteristics. One key parameter of the Schottky barrier diode, the reverse saturation current, can be used to determine the barrier potential. The barrier potential increases as the cell is stressed with 0.5 volts being a typical experimentally determined value for a degraded cell.

  13. Simulation of interdigitated back-contact silicon heterojunction solar cells with quantum transport model

    Science.gov (United States)

    Kamioka, Takefumi; Hayashi, Yutaka; Nakamura, Kyotaro; Ohshita, Yoshio

    2015-08-01

    A simulation of interdigitated back-contact silicon heterojunction (IBC-SHJ) solar cells was performed using a quantum transport model to consider the quantum effect at the crystalline/amorphous (c/a) heterojunction interface. It was found that the impact of the quantum effect on the open-circuit voltage is comparable to that of the interface defect density at the c/a interface, indicating the importance of implementation of the quantum model. The optimal back-contact design was also discussed from the viewpoint of mass production, in which the design rule is relaxed. The degradation of the conversion efficiency by widening the gap between the p- and n-aSi:H layers can be compensated by improving passivation quality at the c/a interface.

  14. Study of interdigitated back contact silicon heterojunctions solar cells by two-dimensional numerical simulations

    International Nuclear Information System (INIS)

    Silicon heterojunctions (SHJ) using thin layers of hydrogenated amorphous silicon (a-Si:H) deposited at low temperature on a crystalline silicon (c-Si) substrate are good candidates for high efficiency solar cells. In spite of achieving more than 22% efficiencies, the standard double HJ solar cells are limited by optical absorption and reflection at the front surface. Because it could help to overcome those limitations, the potential use of interdigitated back contact silicon heterojunctions (IBC-SHJ) structure for solar cells needs to be studied. To achieve realistic IBC-SHJ modelling, we use ATLAS 2-D device simulation software that allows accurate bulk and interface defects modelling. We here focus on IBC-SHJ structure on p-type c-Si simulations varying the values of the following parameters: bulk lifetime, surface recombination velocity at both front and back surfaces, bulk thickness, density of defects at the a-Si:H/c-Si interface. The influence of these parameters has been tested by generating the current-voltage (I-V) and spectral response curves. Results indicate that the key parameters to achieve high efficiency are a high crystalline substrate quality, low surface recombination velocity especially at the front surface, and a low recombining a-Si:H/c-Si interface. The simulations show that efficiencies up to 24% can be achieved with textured IBC-SHJ solar cells.

  15. RF Sputtered ZnTe:N as CdS/CdTe Solar Cell Back-Contact Material

    Science.gov (United States)

    Ma, X.

    1999-04-01

    The most frequently used electrical contact to CdTe thin-film polycrystalline solar cells on glass involves the use of copper. However, Cu is known to be a fast diffuser in many semiconductors and is suspected of leading to some deterioration of performance of CdTe solar cells under extreme conditions. In this work we report on the development of a reactively sputtered ZnTe:N back contact on solar cells. Promising low-resistive nitrogen-doped ZnTe films were obtained. Efficiencies up to 10.8 percent were obtained for solar cells fabricated with a ZnTe:N/Au back contact scheme. Comparison of cell performances using ZnTe:N and Cu/Au back-contacts is presented.

  16. Molybdenum oxide and molybdenum oxide-nitride back contacts for CdTe solar cells

    International Nuclear Information System (INIS)

    Molybdenum oxide (MoOx) and molybdenum oxynitride (MoON) thin film back contacts were formed by a unique ion-beam sputtering and ion-beam-assisted deposition process onto CdTe solar cells and compared to back contacts made using carbon–nickel (C/Ni) paint. Glancing-incidence x-ray diffraction and x-ray photoelectron spectroscopy measurements show that partially crystalline MoOx films are created with a mixture of Mo, MoO2, and MoO3 components. Lower crystallinity content is observed in the MoON films, with an additional component of molybdenum nitride present. Three different film thicknesses of MoOx and MoON were investigated that were capped in situ in Ni. Small area devices were delineated and characterized using current–voltage (J-V), capacitance–frequency, capacitance–voltage, electroluminescence, and light beam-induced current techniques. In addition, J-V data measured as a function of temperature (JVT) were used to estimate back barrier heights for each thickness of MoOx and MoON and for the C/Ni paint. Characterization prior to stressing indicated the devices were similar in performance. Characterization after stress testing indicated little change to cells with 120 and 180-nm thick MoOx and MoON films. However, moderate-to-large cell degradation was observed for 60-nm thick MoOx and MoON films and for C/Ni painted back contacts

  17. Fabrication of back contacts using laser writer and photolithography for inscribing textured solar cells

    Indian Academy of Sciences (India)

    Murugaiya Sridar Ilango; Vijay Monterio; Sheela K Ramasesha

    2015-02-01

    Semiconductor fabrication process begins with photolithography. Preparing a photo mask is the key process step in photolithography. The photo mask was fabricated by inscribing patterns directly onto a soda lime glass with the help of a laser beam, as it is easily controllable. Laser writer LW405-A was used for preparing the mask in this study. Exposure wavelength of 405 nm was used, with which 1.2 m feature size can be written in direct write-mode over the soda lime glass plate. The advantage of using the fabricated mask is that it can be used to design back contacts for thin film Photovoltaic (PV) solar cells. To investigate the process capability of LW405-A, same pattern with different line widths was written on soda lime glass samples at different writing speeds. The pattern was inscribed without proximity effect and stitching errors, which was characterized using optical microscope and field emission scanning electron microscope (FE-SEM). It was proven that writing speed of a mask-writer is decided according to the intended feature size and line width. As the writing speed increases, the edges of the patterns become rougher due to uneven scattering of the laser beam. From the fabricated mask, the solar cell can be developed embedding both the contacts at the bottom layer, to increase the absorption of solar radiation on the top surface effectively by increasing light absorption area.

  18. A simulation study of the micro-grooved electrode structure for back-contact back-junction silicon solar cell

    Science.gov (United States)

    Zhang, Bo; Yang, Jianfeng

    2015-01-01

    A micro-grooved electrode structure is investigated to illustrate its advantages when applied to the back-contact back-junction (BC-BJ) silicon solar cell. The finite element analysis shows that the micro-grooved electrodes enhances the photo-carrier collection and weakens the dependence of collection ability on pitch distance. The geometries of micro-groove are found to have little impact on the cell performance. These advantages open possibilities for the implementation of low cost fabrication methods. As a demonstration, a process involving laser doping and screen printing techniques are proposed and analyzed. The simulation results show that the laser induced lattice damage causes negligible deterioration of device electrical properties and the presence of parasitic metal insulator semiconductor structure near the screen printed electrodes actually leads to a performance improvement rather than degradation. Our preliminary results indicate that the micro-grooved electrode structure is promising for fabricating low cost high efficiency BC-BJ silicon solar cells.

  19. Characteristics of molybdenum bilayer back contacts for Cu(In,Ga)Se{sub 2} solar cells on Ti foils

    Energy Technology Data Exchange (ETDEWEB)

    Roger, Charles, E-mail: charles.rgr@gmail.com [CEA, LITEN, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France); Noël, Sébastien; Sicardy, Olivier; Faucherand, Pascal; Grenet, Louis; Karst, Nicolas; Fournier, Hélène; Roux, Frédéric [CEA, LITEN, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France); Ducroquet, Frédérique [IMEP-LAHC, Minatec, Grenoble-INP, CNRS UMR 5130, 38016 Grenoble (France); Brioude, Arnaud [Laboratoire des Multimatériaux et Interfaces, UMR 5615, Villeurbanne (France); Perraud, Simon [CEA, LITEN, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2013-12-02

    Molybdenum back contact properties are critical for Cu(In,Ga)Se{sub 2} (CIGS) solar cell performance on metallic substrates. In this work, we investigated the properties of sputter-deposited Mo bilayer back contacts on Ti foils. The morphology, electrical resistivity, optical reflectance and residual mechanical stress of the bottom Mo layer were modified by varying the working pressure during its deposition. Working pressures ranging from 0.27 Pa to 4.00 Pa were used. The top Mo layer was deposited using constant conditions at a pressure of 0.13 Pa. It was demonstrated that unlike a Mo monolayer, the use of a Mo bilayer allows controlling the mechanical stress at the Mo/CIGS interface without degrading the optical reflectance and the electrical resistance of the back contact. It was also found that the morphology of the bottom Mo layer affects the growth of the top Mo layer, resulting in a modified back contact surface morphology. This induces changes in the crystalline orientation of the CIGS layer. The resulting solar cell characteristics strongly vary as a function of the bottom Mo layer deposition pressure. A bottom Mo layer growth at 2.93 Pa allows improving the solar cell conversion efficiency by 1.5 times compared to a bottom Mo layer deposited at 0.27 Pa. Using the improved Mo bilayer back contact, a maximum solar cell efficiency of 10.0% was obtained without sodium addition nor anti-reflection coating. - Highlights: • Mo bilayer back contacts for Cu(In,Ga)Se{sub 2} solar cells were grown on Ti substrates. • The sputtering pressure of the bottom Mo layer was varied between 0.27 Pa and 4 Pa. • The top Mo layer controls the optical and electrical properties of the back contact. • The structure of the bottom Mo layer influences the morphology of the top Mo layer. • The back contact affects the CIGS texture, device series resistance and efficiency.

  20. Low-Cost Plasma Immersion Ion Implantation Doping for Interdigitated Back Passivated Contact (IBPC) Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Page, Matthew R.; Theingi, San; Aguiar, Jeffery; Lee, Benjamin G.; Stradins, Paul

    2016-12-01

    We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures (~100 nm thick) grown on n-Cz wafers with pH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by SIMS, photoluminescence, TEM, EELS, and post-metallization TLM to reveal micro- and macro-scopic structural, chemical and electrical information.

  1. Molybdenum Back-Contact Optimization for CIGS Thin Film Solar Cell

    Directory of Open Access Journals (Sweden)

    J.R. Ray

    2011-01-01

    Full Text Available Molybdenum (Mo thin films are most widely used as an ohmic back-contact in the copper indium diselenide (CIS and its alloy copper indium gallium diselenide (CIGS based thin film solar cell. Radio frequency (RF magnetron sputtering system used to deposit Mo thin films on soda lime glass substrate. The deposition was carried out using argon (Ar gas at different Ar controlled (working pressures (1 mTorr to 10 mTorr and at different RF powers (60 W to 100 W. The influence of both the working pressure and the RF power on the Mo thin films was studied by investigating its structural, morphological, electrical, and optical measurements. The results reveal that a stress-free, low-sheet-resistance (~1 Ω/cm2, and reflecting (~ 55 % Mo thin film was observed at 1 mTorr working pressure and 100 W RF power.

  2. Low temperature back-surface-field contacts deposited by hot-wire CVD for heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, D. [Universitat Politecnica de Catalunya, Grup de Recerca en Micro i Nanotecnologies, Jordi Girona 1-3, Barcelona 08034 (Spain)], E-mail: delfina@eel.upc.edu; Voz, C.; Martin, I.; Orpella, A.; Alcubilla, R. [Universitat Politecnica de Catalunya, Grup de Recerca en Micro i Nanotecnologies, Jordi Girona 1-3, Barcelona 08034 (Spain); Villar, F.; Bertomeu, J.; Andreu, J. [CeRMAE-Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Diagonal 647, Barcelona 08028 (Spain); Roca-i-Cabarrocas, P. [LPICM-Ecole Polytechnique, CNRS 91128 Palaiseau (France)

    2008-08-30

    The growing interest in using thinner wafers (< 200 {mu}m) requires the development of low temperature passivation strategies for the back contact of heterojunction solar cells. In this work, we investigate low temperature deposited back contacts based on boron-doped amorphous silicon films obtained by Hot-Wire CVD. The influence of the deposition parameters and the use of an intrinsic buffer layer have been considered. The microstructure of the deposited thin films has been comprehensively studied by Spectroscopic Ellipsometry in the UV-visible range. The effective recombination velocity at the back surface has been measured by the Quasi-Steady-State Photoconductance technique. Complete double-side heterojunction solar cells (1 cm{sup 2}) have been fabricated and characterized by External Quantum Efficiency and current-voltage measurements. Total-area conversion efficiencies up to 14.5% were achieved in a fully low temperature process (< 200 deg. C)

  3. a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

    Energy Technology Data Exchange (ETDEWEB)

    Rostan, Philipp Johannes

    2010-07-01

    This thesis reports on low temperature amorphous silicon back and front contacts for high-efficiency crystalline silicon solar cells with a p-type base. The back contact uses a sequence of intrinsic amorphous (i-a-Si:H) and boron doped microcrystalline (p-{mu}c-Si:H) silicon layers fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and a magnetron sputtered ZnO:Al layer. The back contact is finished by evaporating Al onto the ZnO:Al and altogether prepared at a maximum temperature of 220 C. Analysis of the electronic transport of mobile charge carriers at the back contact shows that the two high-efficiency requirements low back contact series resistance and high quality c-Si surface passivation are in strong contradiction to each other, thus difficult to achieve at the same time. The preparation of resistance- and effective lifetime samples allows one to investigate both requirements independently. Analysis of the majority charge carrier transport on complete Al/ZnO:Al/a-Si:H/c-Si back contact structures derives the resistive properties. Measurements of the effective minority carrier lifetime on a-Si:H coated wafers determines the back contact surface passivation quality. Both high-efficiency solar cell requirements together are analyzed in complete photovoltaic devices where the back contact series resistance mainly affects the fill factor and the back contact passivation quality mainly affects the open circuit voltage. The best cell equipped with a diffused emitter with random texture and a full-area a-Si:H/c-Si back contact has an independently confirmed efficiency {eta} = 21.0 % with an open circuit voltage V{sub oc} = 681 mV and a fill factor FF = 78.7 % on an area of 1 cm{sup 2}. An alternative concept that uses a simplified a-Si:H layer sequence combined with Al-point contacts yields a confirmed efficiency {eta} = 19.3 % with an open circuit voltage V{sub oc} = 655 mV and a fill factor FF = 79.5 % on an area of 2 cm{sup 2}. Analysis of the

  4. Evaluation of back contact in spray deposited SnS thin film solar cells by impedance analysis.

    Science.gov (United States)

    Patel, Malkeshkumar; Ray, Abhijit

    2014-07-01

    The role of back metal (M) contact in sprayed SnS thin film solar cells with a configuration Glass/F:SnO2/In2S3/SnS/M (M = Graphite, Cu, Mo, and Ni) was analyzed and discussed in the present study. Impedance spectroscopy was employed by incorporating constant phase elements (CPE) in the equivalent circuit to investigate the degree of inhomogeneity associated with the heterojunction and M/SnS interfaces. A best fit to Nyquist plot revealed a CPE exponent close to unity for thermally evaporated Cu, making it an ideal back contact. The Bode phase plot also exhibited a higher degree of disorders associated with other M/SnS interfaces. The evaluation scheme is useful for other emerging solar cells developed from low cost processing schemes like spray deposition, spin coating, slurry casting, electrodeposition, etc. PMID:24882468

  5. a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

    Energy Technology Data Exchange (ETDEWEB)

    Rostan, Philipp Johannes

    2010-07-01

    This thesis reports on low temperature amorphous silicon back and front contacts for high-efficiency crystalline silicon solar cells with a p-type base. The back contact uses a sequence of intrinsic amorphous (i-a-Si:H) and boron doped microcrystalline (p-{mu}c-Si:H) silicon layers fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and a magnetron sputtered ZnO:Al layer. The back contact is finished by evaporating Al onto the ZnO:Al and altogether prepared at a maximum temperature of 220 C. Analysis of the electronic transport of mobile charge carriers at the back contact shows that the two high-efficiency requirements low back contact series resistance and high quality c-Si surface passivation are in strong contradiction to each other, thus difficult to achieve at the same time. The preparation of resistance- and effective lifetime samples allows one to investigate both requirements independently. Analysis of the majority charge carrier transport on complete Al/ZnO:Al/a-Si:H/c-Si back contact structures derives the resistive properties. Measurements of the effective minority carrier lifetime on a-Si:H coated wafers determines the back contact surface passivation quality. Both high-efficiency solar cell requirements together are analyzed in complete photovoltaic devices where the back contact series resistance mainly affects the fill factor and the back contact passivation quality mainly affects the open circuit voltage. The best cell equipped with a diffused emitter with random texture and a full-area a-Si:H/c-Si back contact has an independently confirmed efficiency {eta} = 21.0 % with an open circuit voltage V{sub oc} = 681 mV and a fill factor FF = 78.7 % on an area of 1 cm{sup 2}. An alternative concept that uses a simplified a-Si:H layer sequence combined with Al-point contacts yields a confirmed efficiency {eta} = 19.3 % with an open circuit voltage V{sub oc} = 655 mV and a fill factor FF = 79.5 % on an area of 2 cm{sup 2}. Analysis of the

  6. Back-junction back-contact n-type silicon solar cell with diffused boron emitter locally blocked by implanted phosphorus

    Science.gov (United States)

    Müller, Ralph; Schrof, Julian; Reichel, Christian; Benick, Jan; Hermle, Martin

    2014-09-01

    The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a process sequence based on a synergistic use of ion implantation and furnace diffusion. This sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three processing steps. We observed that implanted phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674 mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.

  7. Back-junction back-contact n-type silicon solar cell with diffused boron emitter locally blocked by implanted phosphorus

    Energy Technology Data Exchange (ETDEWEB)

    Müller, Ralph, E-mail: ralph.mueller@ise.fraunhofer.de; Schrof, Julian; Reichel, Christian; Benick, Jan; Hermle, Martin [Fraunhofer Institute for Solar Energy Systems, Heidenhofstrasse 2, Freiburg D-79110 (Germany)

    2014-09-08

    The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a process sequence based on a synergistic use of ion implantation and furnace diffusion. This sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three processing steps. We observed that implanted phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674 mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.

  8. Performance of Graphite Pastes Doped with Various Materials as Back Contact for CdS/CdTe Solar Cell

    Science.gov (United States)

    Hanafusa, Akira; Aramoto, Tetsuya; Morita, Akikatsu

    2001-12-01

    To date the problem of developing a suitable back contact for CdS/CdTe solar cells has yet to be resolved. The Cu-doped graphite paste that is widely used as a back contact is associated with degradation problems due to possible Cu diffusion across the CdS/CdTe junction. This study was designed to find ways to improve the graphite paste for superior electrical contacts. Mixtures of graphite paste with various material constituents and dopants consisting of silver-, lead-, nickel-, antimony-, bismuth-, or phosphor-based compounds, were studied. Results show that the performances of solar cells fabricated from these graphite pastes vary with the change in the composition. In the cases of Ag2Te and Ni2P, we studied their relationship with the solar cell characteristics with regard to dopant quantity, and furthermore in the case of Ag2Te, with regard to the sintering temperature of the graphite electrode. A fill factor (F.F.) of over 0.65 and efficiencies over 13% were obtained with Ag2Te, Ag3PO4, Ag2MoO4, and NiTe, and efficiencies over 12% were obtained with AgF, AgCl, Ni2P, and Ni3P.

  9. Band diagrams and performance of CdTe solar cells with a Sb2Te3 back contact buffer layer

    OpenAIRE

    Songbai Hu; Zhe Zhu; Wei Li; Lianghuan Feng; Lili Wu; Jingquan Zhang; Jingjing Gao

    2011-01-01

    Sb2Te3 thin films were prepared by vacuum co-evaporation and the crystallinity of the films was greatly improved after annealing at 573 K in N2 ambient. Then they were deposited on the CdTe thick films. Band diagrams of the as-deposited and annealed CdTe/Sb2Te3 interfaces were constructed. Consequently, Sb2Te3 was used as a back contact layer for CdTe thin film solar cells and the cell performance was investigated. It was found that the Sb impurities accumulated in the CdTe grain boundaries d...

  10. Band diagrams and performance of CdTe solar cells with a Sb2Te3 back contact buffer layer

    Directory of Open Access Journals (Sweden)

    Songbai Hu

    2011-12-01

    Full Text Available Sb2Te3 thin films were prepared by vacuum co-evaporation and the crystallinity of the films was greatly improved after annealing at 573 K in N2 ambient. Then they were deposited on the CdTe thick films. Band diagrams of the as-deposited and annealed CdTe/Sb2Te3 interfaces were constructed. Consequently, Sb2Te3 was used as a back contact layer for CdTe thin film solar cells and the cell performance was investigated. It was found that the Sb impurities accumulated in the CdTe grain boundaries diffuse deeply in the CdTe layer, and more photogenerated electrons and holes are separated by the segregated SbCd+ donors into the GBs. What is more, the doping concentration in the vicinity of the CdTe/CdS heterojunction increases for the formation of substitutional SbTe- acceptors under the Cd-rich conditions. For the introduction of the p-type Sb2Te3 layers as the back contact to the CdTe thin film solar cells, the performance of CdTe thin film solar cells has been greatly improved and an efficiency of 13.1% (FF=62.3%, Jsc=25.8 mA/cm2, Voc= 815.8 mV obtained.

  11. Simplified module assembly using back-contact crystalline-silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gee, J.M.; Garrett, S.E.; Morgan, W.P.

    1997-11-01

    The authors are developing new module concepts that encapsulate and electrically connect all the crystalline-silicon (c-Si) photovoltaic (PV) cells in a module in a single step. The new assembly process (1) uses back-contact c-Si cells, (2) uses a module backplane that has both the electrical circuit, encapsulant, and backsheet in a single piece, and (3) uses a single-step process for assembly of these components into a module. This new process reduces module assembly cost by using planar processes that are easy to automate, by reducing the number of steps, and by eliminating low-throughput (e.g., individual cell tabbing, cell stringing, etc.) steps. The authors refer to this process as monolithic module assembly since it translates many of the advantages of monolithic module construction of thin-film PV modules to wafered c-Si PV modules. Preliminary development of the new module assembly process, and some estimations of the cost potential of the new process, are presented.

  12. Stability testing of ZnTe:N as a Cu-free back contact to CdTe/CdS solar cells

    Science.gov (United States)

    Simmons, D. A.

    2000-03-01

    Most CdTe/CdS solar cell devices use Cu as a back contact, but recent studies have suggested Cu may cause instabilities in the device under some extreme conditions. We have used rf-sputter deposited ZnTe:N as an alternative back contact to CdTe/CdS solar cells. Identical CdTe/CdS solar cells were back-contacted with ZnTe:N or a standard Cu/Au contact. Sets of both types of cells were subjected to either 3000 hours of baking at 100 C in the dark, or 3000 hours of light-soaking at 1 sun. While initial efficiencies of the Cu cells were slightly higher than the ZnTe:N cells, the ZnTe:N cells performed much better after baking and equally as well after light-soaking as the Cu cells.

  13. Photo-assisted electrodeposition of polypyrrole back contact to CdS/CdTe solar cell structures

    International Nuclear Information System (INIS)

    Glass/indium tin oxide/CdS/CdTe photovoltaic structures were prepared using the high vacuum evaporation method, followed by a typical activation procedure, which involves annealing of the structures at 415–430 °C in the presence of CdCl2 in air. The main purpose of this work was to prepare and evaluate the performance of complete CdS/CdTe solar cell structures with polypyrrole (PPy) back contact and compare it to the structures with standard, copper containing back contact. Back contact layers of PPy doped with ß-naphthalene sulfonate were deposited onto activated CdTe layers by photo-assisted electrodeposition technique in a three-electrode electrochemical cell. It was found that intensive white light illumination from a xenon lamp facilitates PPy deposition at a lower applied potential range and improves quality of obtained polymer films. Applied technique gives the possibility to deposit the PPy layer strictly onto illuminated photoactive CdTe surface eliminating possible short-circuiting through pinholes and cracks in CdTe photoabsorber layer. Furthermore, relatively low deposition potential values give the possibility to reduce electrochemical degradation of CdS/CdTe photovoltaic structure in an electrochemical cell. - Highlights: ► Polypyrrole (PPy) conductive polymer back contact (BC) to CdTe semiconductor. ► Hybrid organic/inorganic photovoltaic structures. ► PPy layer to CdTe by photo-assisted electrodeposition technique ► Comparable efficiency of cells with PPy and conventional inorganic CuxTe BC

  14. Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells

    Science.gov (United States)

    Yang, Guangtao; Ingenito, Andrea; van Hameren, Nienke; Isabella, Olindo; Zeman, Miro

    2016-01-01

    Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low-pressure chemical vapor deposition and subsequently annealed. The impact of doping profile on the passivation quality of the polySi doped contacts is studied for both polarities. It was found that an excellent surface passivation could be obtained by confining as much as possible the implanted-and-activated dopants within the polySi layers. The doping profile in the polySi was controlled by modifying the polySi thickness, the energy and dose of ion-implantation, and the temperature and time of annealing. An implied open-circuit voltage of 721 mV for n-type and 692 mV for p-type passivating contacts was achieved. Besides the high passivating quality, the developed passivating contacts exhibit reasonable high conductivity (Rsh n-type = 95 Ω/□ and Rsh p-type = 120 Ω/□). An efficiency of 19.2% (Voc = 673 mV, Jsc = 38.0 mA/cm2, FF = 75.2%, and pseudo-FF = 83.2%) was achieved on a front-textured IBC solar cell with polySi passivating contacts as both back surface field and emitter. By improving the front-side passivation, a VOC of 696 mV was also measured.

  15. Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells

    International Nuclear Information System (INIS)

    Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low-pressure chemical vapor deposition and subsequently annealed. The impact of doping profile on the passivation quality of the polySi doped contacts is studied for both polarities. It was found that an excellent surface passivation could be obtained by confining as much as possible the implanted-and-activated dopants within the polySi layers. The doping profile in the polySi was controlled by modifying the polySi thickness, the energy and dose of ion-implantation, and the temperature and time of annealing. An implied open-circuit voltage of 721 mV for n-type and 692 mV for p-type passivating contacts was achieved. Besides the high passivating quality, the developed passivating contacts exhibit reasonable high conductivity (Rsh n-type = 95 Ω/□ and Rsh p-type = 120 Ω/□). An efficiency of 19.2% (Voc = 673 mV, Jsc = 38.0 mA/cm2, FF = 75.2%, and pseudo-FF = 83.2%) was achieved on a front-textured IBC solar cell with polySi passivating contacts as both back surface field and emitter. By improving the front-side passivation, a VOC of 696 mV was also measured

  16. Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Guangtao; Ingenito, Andrea; Hameren, Nienke van; Isabella, Olindo; Zeman, Miro [PVMD, Delft University of Technology, P.O. Box 5031, 2600 GA Delft (Netherlands)

    2016-01-18

    Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low-pressure chemical vapor deposition and subsequently annealed. The impact of doping profile on the passivation quality of the polySi doped contacts is studied for both polarities. It was found that an excellent surface passivation could be obtained by confining as much as possible the implanted-and-activated dopants within the polySi layers. The doping profile in the polySi was controlled by modifying the polySi thickness, the energy and dose of ion-implantation, and the temperature and time of annealing. An implied open-circuit voltage of 721 mV for n-type and 692 mV for p-type passivating contacts was achieved. Besides the high passivating quality, the developed passivating contacts exhibit reasonable high conductivity (R{sub sh n-type} = 95 Ω/□ and R{sub sh p-type} = 120 Ω/□). An efficiency of 19.2% (V{sub oc} = 673 mV, J{sub sc} = 38.0 mA/cm{sup 2}, FF = 75.2%, and pseudo-FF = 83.2%) was achieved on a front-textured IBC solar cell with polySi passivating contacts as both back surface field and emitter. By improving the front-side passivation, a V{sub OC} of 696 mV was also measured.

  17. Alternative back contact for CIGS solar cells built on sodium-free substrates

    OpenAIRE

    Söderström, Wilhelm

    2011-01-01

    It is widely known that the element sodium plays a vital role in providing highefficiency CIGS solar cells and that when cells are built on sodium free substrates theyneed an alternative (a substitute) sodium source. In this study a molybdenum-sodiumcompound has been deposited, investigated and evaluated as an alternative backcontact layer containing sodium. The compound had a 5 at % sodium concentrationand it was manufactured by an Austrian company called Plansee. The aim of the studywas to ...

  18. Analysis of the interdigitated back contact solar cells: The n-type substrate lifetime and wafer thickness

    Science.gov (United States)

    Zhang, Wei; Chen, Chen; Jia, Rui; Sun, Yun; Xing, Zhao; Jin, Zhi; Liu, Xin-Yu; Liu, Xiao-Wen

    2015-10-01

    The n-type silicon integrated-back contact (IBC) solar cell has attracted much attention due to its high efficiency, whereas its performance is very sensitive to the wafer of low quality or the contamination during high temperature fabrication processing, which leads to low bulk lifetime τbulk. In order to clarify the influence of bulk lifetime on cell characteristics, two-dimensional (2D) TCAD simulation, combined with our experimental data, is used to simulate the cell performances, with the wafer thickness scaled down under various τbulk conditions. The modeling results show that for the IBC solar cell with high τbulk, (such as 1 ms-2 ms), its open-circuit voltage Voc almost remains unchanged, and the short-circuit current density Jsc monotonically decreases as the wafer thickness scales down. In comparison, for the solar cell with low τbulk (for instance, < 500 μs) wafer or the wafer contaminated during device processing, the Voc increases monotonically but the Jsc first increases to a maximum value and then drops off as the wafer’s thickness decreases. A model combing the light absorption and the minority carrier diffusion is used to explain this phenomenon. The research results show that for the wafer with thinner thickness and high bulk lifetime, the good light trapping technology must be developed to offset the decrease in Jsc. Project supported by the Chinese Ministry of Science and Technology Projects (Grant Nos. 2012AA050304 and Y0GZ124S01), the National Natural Science Foundation of China (Grant Nos. 11104319, 11274346, 51202285, 51402347, and 51172268), and the Fund of the Solar Energy Action Plan from the Chinese Academy of Sciences (Grant Nos. Y3ZR044001 and Y2YF014001).

  19. Opto-Electronic Characterization CdTe Solar Cells from TCO to Back Contact with Nano-Scale CL Probe

    Energy Technology Data Exchange (ETDEWEB)

    Moseley, John; Al-Jassim, Mowafak M.; Paudel, Naba; Mahabaduge, Hasitha; Kuciauskas, Darius; Guthrey, Harvey L.; Duenow, Joel; Yan, Yanfa; Metzger, Wyatt K.; Ahrenkiel, Richard K.

    2015-06-14

    We used cathodoluminescence (CL) (spectrum-per-pixel) imaging on beveled CdTe solar cell sections to investigate the opto-electronic properties of these devices from the TCO to the back contact. We used a nano-scale CL probe to resolve luminescence from grain boundary (GB) and grain interior (GI) locations near the CdS/CdTe interface where the grains are very small. As-deposited, CdCl2-treated, Cu-treated, and (CdCl2+Cu)-treated cells were analyzed. Color-coded CL spectrum imaging maps on bevels illustrate the distribution of the T=6 K luminescence transitions through the depth of devices with unprecedented spatial resolution. The CL at the GBs and GIs is shown to vary significantly from the front to the back of devices and is a sensitive function of processing. Supporting D-SIMS depth profile, TRPL lifetime, and C-V measurements are used to link the CL data to the J-V performance of devices.

  20. Potential of ITO nanoparticles formed by hydrogen treatment in PECVD for improved performance of back grid contact crystalline silicon solar cell

    International Nuclear Information System (INIS)

    Highlights: • Indium tin oxide (ITO) nanoparticles as back scatterers in c-Si solar cells. • ITO NP have comparatively low dissipative losses and tunable optical properties. • ITO NP formed by hydrogen plasma treatment on sputtered ITO film. • Enhanced absorption and carrier collection at longer wavelengths due to enhanced light trapping. - Abstract: This paper discusses the prospect of using indium tin oxide (ITO) nanoparticles as back scatterers in crystalline silicon solar cells instead of commonly used metal nanoparticles as ITO nanoparticles have comparatively low dissipative losses and tunable optical properties. ITO nanoparticles of ∼5–10 nm size is developed on the rear side of the solar cell by deposition of ∼5–10 nm thick ITO layer by DC magnetron sputtering followed by hydrogen treatment in PECVD. The silicon solar cell is fabricated in the laboratory using conventional method with grid metal contact at the back surface. Various characterizations like FESEM, TEM, AFM, XRD, EQE and IV characteristics are performed to analyze the morphology, chemical composition, optical characteristics and electrical performance of the device. ITO nanoparticles at the back surface of the solar cell significantly enhances the short circuit current, open circuit voltage and efficiency of the solar cell. These enhancements may be attributed to the increased absorption and carrier collection at longer wavelengths of solar spectrum due to enhanced light trapping by the ITO nanoparticles and surface passivation by the hydrogen treatment of the back surface

  1. Heavily doped polysilicon-contact solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.; Arienzo, M.; Iles, P. A.

    1985-01-01

    The first use of a (silicon)/heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction or back-surface-field (BSF) structure of silicon solar cells is reported. Compared with BSF and back-ohmic-contact (BOC) control samples, the polysilicon-back solar cells show improvements in red spectral response (RSR) and open-circuit voltage. Measurement reveals that a decrease in effective surface recombination velocity S is responsible for this improvement. Decreased S results for n-type (Si:As) polysilicon, consistent with past findings for bipolar transistors, and for p-type (Si:B) polysilicon, reported here for the first time. Though the present polysilicon-back solar cells are far from optimal, the results suggest a new class of designs for high efficiency silicon solar cells. Detailed technical reasons are advanced to support this view.

  2. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    NARCIS (Netherlands)

    Franken, R.H.-J.

    2006-01-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy

  3. The Effect of Sputtering Parameters on the Film Properties of Molybdenum Back Contact for CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    Peng-cheng Huang

    2013-01-01

    Full Text Available Molybdenum (Mo thin films are widely used as a back contact for CIGS-based solar cells. This paper determines the optimal settings for the sputtering parameters for an Mo thin film prepared on soda lime glass substrates, using direct current (dc magnetron sputtering, with a metal Mo target, in an argon gas environment. A Taguchi method with an L9 orthogonal array, the signal-to-noise ratio, and an analysis of variances is used to determine the performance characteristics of the coating operation. The main sputtering parameters, such as working pressure (mTorr, dc power (W, and substrate temperature (°C, are optimized with respect to the structural features, surface morphology, and electrical properties of the Mo films. An adhesive tape test is performed on each film to determine the adhesion strength of the films. The experimental results show that the working pressure has the dominant effect on electrical resistivity and reflectance. The intensity of the main peak (110 for the Mo film increases and the full width at half maximum decreases gradually as the sputtering power is increased. Additionally, the application of an Mo bilayer demonstrates good adherence and low resistivity.

  4. Characteristics of Bilayer Molybdenum Films Deposited Using RF Sputtering for Back Contact of Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Sea-Fue Wang

    2014-01-01

    Full Text Available Mo films prepared under a single deposition condition seldom simultaneously obtain a low resistivity and a good adhesion necessary for use in solar cells. In order to surmount the obstacle, bilayer Mo films using DC sputtering at a higher working pressure and a lower working pressure have been attempted as reported in the literature. In this study, RF sputtering with different powers in conjunction with different working pressures was explored to prepare bilayer Mo film. The first bottom layer was grown at a RF sputtering power of 30 W and a working pressure of 12 mTorr, and the second top layer was deposited at 100 W and 4.5 mTorr. The films revealed a columnar growth with a preferred orientation along the (110 plane. The bilayer Mo films reported an electrical resistivity of 6.35 × 10−5 Ω-cm and passed the Scotch tape test for adhesion to the soda-lime glass substrate, thereby qualifying the bilayer Mo films for use as back metal contacts for CIGS substrates.

  5. Superior stability of ultra thin CdTe solar cells with simple Cu/Au back contact

    International Nuclear Information System (INIS)

    Due to its high scalability and low production cost, CdTe has shown a significant potential for high mass production, resulting to be one of the cheapest photovoltaic technologies available. Efficiencies exceeding 20% have been obtained by the application of high temperature CdTe deposition. However tellurium scarcity is a limitation for mass production and one of the possibilities to overcome this is the reduction of absorber thickness. We have already demonstrated efficiencies above 11% for devices with 1.5 μm thick CdTe. Nowadays we have fabricated ultra-thin absorber devices performing more than 13% efficiencies. But what is most interesting is that we have observed a different electrical operation and stability, connected to the fact that the depletion region takes a very large part of the device. In this work many CdTe solar cells with a standard Cu/Au back contact, made with different absorber thicknesses, were prepared, stored in dark and tested at different aging times, showing different reactions to the aging and in particular a remarkable stability as CdTe thickness reduces. - Highlights: • CdTe/CdS devices with 0.7, 1 and 1.8 μm thick absorbers have been prepared. • Superior stability in dark aging of ultra thin CdTe devices has been registered. • Electrical analysis shows different behaviors and nature of defects for thin CdTe samples. • For 6 μm CdTe samples degradation is driven mainly by defect compensation. • For ultra thin CdTe samples, degradation is dominated by impurities from the front contact

  6. Front surface field formation and diffusion profiles for industrial interdigitated back contact solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Cascant, M.; Morecroft, D.; Boulif, K.; Vauche, L.; Yuste, H.; Castano, F.J. [Siliken, High efficiency solar cell pilot line, R and D department, Ciudad Politecnica de la Innovacion- UPV Camino de Vera 14, 46022 Valencia, (Spain); Bende, E.E. [ECN Solar Energy, Petten (Netherlands)

    2012-09-15

    Optimization of the Front Surface Field (FSF) for IBC cells is important for passivation, lowering series resistance and reducing UV light degradation. This work presents results for optimizing the FSF diffusion from an industrial perspective, focusing on optimizing the process flow to achieve excellent FSF performance, whilst at the same time reducing the number of process steps. The ideal FSF profile is a compromise since a lightly doped deep diffusion reduces recombination losses close the cell surface where the light is captured, whilst increased doping reduces series resistance. This work investigates diffusing the FSF (1) at the beginning, (2) in the middle and (3) towards the end of the IBC process flow. The advantage of the first option is that the diffusion depth can be increased by subsequent thermal steps. However a diffusion barrier is required to protect the FSF throughout the subsequent processing, which increases the number of process steps and results in increased costs. By placing the FSF diffusion later in the process flow it is possible to simplify the process reducing the number of steps. Experimental results show excellent FSF diffusion passivation performance over 156mm, with lifetime values of over 500 {mu}s. Simulations confirm that high current generation can be achieved with a short circuit current of over 40 mA cm-{sup 2}.

  7. A detrimental reaction at the molybdenum back contact in Cu2ZnSn(S,Se)4 thin-film solar cells.

    Science.gov (United States)

    Scragg, Jonathan J; Wätjen, J Timo; Edoff, Marika; Ericson, Tove; Kubart, Tomas; Platzer-Björkman, Charlotte

    2012-11-28

    Experimental proof is presented for a hitherto undetected solid-state reaction between the solar cell material Cu(2)ZnSn(S,Se)(4) (CZTS(e)) and the standard metallic back contact, molybdenum. Annealing experiments combined with Raman and transmission electron microscopy studies show that this aggressive reaction causes formation of MoS(2) and secondary phases at the CZTS|Mo interface during thermal processing. A reaction scheme is presented and discussed in the context of current state-of-the-art synthesis methods for CZTS(e). It is concluded that alternative back contacts will be important for future improvements in CZTS(e) quality. PMID:23146047

  8. Liquid phase crystallized silicon on glass: Technology, material quality and back contacted heterojunction solar cells

    Science.gov (United States)

    Haschke, Jan; Amkreutz, Daniel; Rech, Bernd

    2016-04-01

    Liquid phase crystallization has emerged as a novel approach to grow large grained polycrystalline silicon films on glass with high electronic quality. In recent years a lot of effort was conducted by different groups to determine and optimize suitable interlayer materials, enhance the crystallographic quality or to improve post crystallization treatments. In this paper, we give an overview on liquid phase crystallization and describe the necessary process steps and discuss their influence on the absorber properties. Available line sources are compared and different interlayer configurations are presented. Furthermore, we present one-dimensional numerical simulations of a rear junction device, considering silicon absorber thicknesses between 1 and 500 µm. We vary the front surface recombination velocity as well as doping density and minority carrier lifetime in the absorber. The simulations suggest that a higher absorber doping density is beneficial for layer thicknesses below 20 µm or when the minority carrier lifetime is short. Finally, we discuss possible routes for device optimization and propose a hybride cell structure to circumvent current limitations in device design.

  9. Effect of deposition pressure on the properties of magnetron-sputter-deposited molybdenum back contacts for CIGS solar cells

    Science.gov (United States)

    Li, Weimin; Yan, Xia; Aberle, Armin G.; Venkataraj, Selvaraj

    2015-08-01

    Molybdenum (Mo) thin films were deposited onto soda-lime glass substrates by DC magnetron sputtering of a Mo target at various chamber pressures ranging from 1.5 × 10-3 to 7.5 × 10-3 mbar. The film properties were analysed with regards to their application as back electrode in copper indium gallium diselenide (CIGS) solar cells. It is observed that the resulting film morphology and microstructure were strongly affected by deposition pressure. Mo films deposited at a low pressure possess a high density and a low sheet resistance. These films also have a compact microstructure and a compressive strain, which lead to poor adhesion. The adhesion can be improved by increasing the chamber pressure, which has negative effects on the sheet resistance, optical reflection and porosity of the films. On the basis of these results, a method has been established to fabricate low-resistivity Mo films on soda-lime glass with very good adhesion for CIGS solar cell applications.

  10. Fabrication of CdS/CdTe solar cells with transparent p-type conductive BaCuSeF back contact

    Science.gov (United States)

    Yamamoto, Koichi; Sakakima, Hiroshi; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Wada, Takahiro

    2015-08-01

    BaCuSeF films were applied to CdS/CdTe solar cells as back electrodes. The interfaces between the CdTe and BaCuSeF layers in the CdS/CdTe solar cells with BaCuSeF back contact deposited at substrate temperatures (TS) of 200 and 300 °C were analyzed by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). We clearly observed many dislocations in the CdTe layer in the CdS/CdTe solar cell with the BaCuSeF layer deposited at TS = 300 °C. We also observed a reaction layer of Cu2.72Te2 between the BaCuSeF and CdTe layers in both solar cells. We concluded that (1) the substrate temperature for the pulsed laser deposition of the BaCuSeF layer and (2) the interface between the CdTe and BaCuSeF layers are important factors for the performance of the CdTe solar cells. We obtained high conversion efficiency of 8.31% for a solar cell with a BaCuSeF layer deposited at TS = 200 °C on a CdTe surface etched in a NH3 aqueous solution. The highest conversion efficiency of 9.91% was obtained for a solar cell with a CdTe surface etched in a bromide-bromate solution.

  11. Simultaneous shunt protection and back contact formation for CdTe solar cells with single wall carbon nanotube layers

    Science.gov (United States)

    Phillips, Adam B.; Khanal, Rajendra R.; Song, Zhaoning; Watthage, Suneth C.; Kormanyos, Kenneth R.; Heben, Michael J.

    2015-12-01

    Thin film photovoltaic (PV) devices and modules prepared by commercial processes can be severely compromised by through-device low resistance electrical pathways. The defects can be due to thin or missing semiconductor material, metal diffusion along grain boundaries, or areas containing diodes with low turn-on potentials. We report the use of single wall carbon nanotube (SWCNT) layers to enable both protection against these defects and back contact formation for CdTe PV devices. Samples prepared with a SWCNT back contact exhibited good efficiency and did not require shunt protection, while devices prepared without shunt protection using a standard metal back contact performed poorly. We describe the mechanism by which the SWCNT layer functions. In addition to avoiding the need for shunt protection by other means, the SWCNT film also provides a route to higher short circuit currents.

  12. Improving Efficiency of Evaporated Cu2ZnSnS4 Thin Film Solar Cells by a Thin Ag Intermediate Layer between Absorber and Back Contact

    Directory of Open Access Journals (Sweden)

    Hongtao Cui

    2015-01-01

    Full Text Available A 20 nm Ag coating on Mo back contact was adopted to improve the back contact of evaporated Cu2ZnSnS4 (CZTS solar cells. The Ag layer helped reduce the thickness of MoS2 which improves fill factor (FF significantly; additionally, it reduced secondary phases ZnS and SnS2−x, which may help carrier transport; it was also involved in the doping of the absorber layer, which compensated the intrinsic p-type doping and therefore drags down the doping level. The doping involvement may enlarge the depletion region and improve lifetime of the absorber, which led to enhancing open circuit voltage (VOC, short circuit current density (JSC, and efficiency significantly. However, it degrades the crystallinity of the material slightly.

  13. Rapid thermal annealed Molybdenum back contact for Cu{sub 2}ZnSnS{sub 4} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiaolei, E-mail: xiaolei.liu@student.unsw.edu.au, E-mail: h.cui@unsw.edu.au, E-mail: xj.hao@unsw.edu.au; Cui, Hongtao, E-mail: xiaolei.liu@student.unsw.edu.au, E-mail: h.cui@unsw.edu.au, E-mail: xj.hao@unsw.edu.au; Kong, Charlie; Hao, Xiaojing, E-mail: xiaolei.liu@student.unsw.edu.au, E-mail: h.cui@unsw.edu.au, E-mail: xj.hao@unsw.edu.au; Huang, Yidan; Liu, Fangyang; Song, Ning; Conibeer, Gavin; Green, Martin [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia)

    2015-03-30

    In this work, an industrially viable manufacturing process—rapid thermal annealing (RTA) of Molybdenum back contact is proposed and investigated to improve the performance of sputtered Cu{sub 2}ZnSnS{sub 4} (CZTS) solar cells. The RTA process was found to facilitate Na diffusion from soda lime glass to Mo as well as CZTS and improve the crystallinity of the Mo film. Consequently, the surface morphology of the subsequently deposited CZTS absorbers is improved, which results in significant enhancement of open circuit voltage, short-circuit current density, fill factor, and conversion efficiency.

  14. Impact of DC-power during Mo back contact sputtering on the alkali distribution in Cu(In,Ga)Se{sub 2}-based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lepetit, T., E-mail: thomas.lepetit@cnrs-imn.fr [Institut des Matériaux Jean Rouxel (IMN), UMR 6502 CNRS, 2 rue de la Houssinière BP 32229, 44322 Nantes Cedex 3 (France); Mangin, D. [Institut Jean Lamour, UMR 7198 CNRS — Université de Lorraine, Parc de Saurupt, CS 50840, 54011 Nancy Cedex (France); Gautron, E.; Tomassini, M.; Harel, S.; Arzel, L.; Barreau, N. [Institut des Matériaux Jean Rouxel (IMN), UMR 6502 CNRS, 2 rue de la Houssinière BP 32229, 44322 Nantes Cedex 3 (France)

    2015-05-01

    DC-sputtered Mo back contact layers were deposited on soda-lime glass (SLG) with different power densities applied on the Mo target to study its influence on the photovoltaic performance of Cu(In,Ga)Se{sub 2}-based (CIGSe) solar cell. CIGSe absorber was then deposited simultaneously on these SLG/Mo, following the 3-stage process. These devices have good but different photovoltaic performance (> 16% efficiency without MgF{sub 2} coating). To find a material origin, secondary ion mass spectroscopy (SIMS) profiles were carried out on complete cells, revealing that Na and K content and distribution in each layer depend on the deposition conditions of the back contact. Even before the CIGSe deposition and despite similar morphologies, Na content can vary 10-fold from one Mo layer to another. The same applies to the absorber; when grown on a different Mo they present the same grain boundary density but different alkali contents in bulk or at interfaces. This has an influence on the compositional grading in absorber, confirmed by X-ray diffraction and SIMS. - Highlights: • Mo films synthesized at different DC-power applied on the target during sputtering. • Similar macroscopic properties of Mo back contacts • The lowest alkali content in absorber with the highest DC-power applied during Mo sputtering.

  15. Rectification and tunneling effects enabled by Al{sub 2}O{sub 3} atomic layer deposited on back contact of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Jun; Lin, Qinxian; Li, Hao; Su, Yantao; Yang, Xiaoyang; Wu, Zhongzhen; Zheng, Jiaxin; Wang, Xinwei; Lin, Yuan; Pan, Feng, E-mail: panfeng@pkusz.edu.cn [School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055 (China)

    2015-07-06

    Atomic layer deposition (ALD) of Aluminum oxide (Al{sub 2}O{sub 3}) is employed to optimize the back contact of thin film CdTe solar cells. Al{sub 2}O{sub 3} layers with a thickness of 0.5 nm to 5 nm are tested, and an improved efficiency, up to 12.1%, is found with the 1 nm Al{sub 2}O{sub 3} deposition, compared with the efficiency of 10.7% without Al{sub 2}O{sub 3} modification. The performance improvement stems from the surface modification that optimizes the rectification and tunneling of back contact. The current-voltage analysis indicates that the back contact with 1 nm Al{sub 2}O{sub 3} maintains large tunneling leakage current and improves the filled factor of CdTe cells through the rectification effect. XPS and capacitance-voltage electrical measurement analysis show that the ALD-Al{sub 2}O{sub 3} modification layer features a desired low-density of interface state of 8 × 10{sup 10 }cm{sup −2} by estimation.

  16. Rectification and tunneling effects enabled by Al2O3 atomic layer deposited on back contact of CdTe solar cells

    Science.gov (United States)

    Liang, Jun; Lin, Qinxian; Li, Hao; Su, Yantao; Yang, Xiaoyang; Wu, Zhongzhen; Zheng, Jiaxin; Wang, Xinwei; Lin, Yuan; Pan, Feng

    2015-07-01

    Atomic layer deposition (ALD) of Aluminum oxide (Al2O3) is employed to optimize the back contact of thin film CdTe solar cells. Al2O3 layers with a thickness of 0.5 nm to 5 nm are tested, and an improved efficiency, up to 12.1%, is found with the 1 nm Al2O3 deposition, compared with the efficiency of 10.7% without Al2O3 modification. The performance improvement stems from the surface modification that optimizes the rectification and tunneling of back contact. The current-voltage analysis indicates that the back contact with 1 nm Al2O3 maintains large tunneling leakage current and improves the filled factor of CdTe cells through the rectification effect. XPS and capacitance-voltage electrical measurement analysis show that the ALD-Al2O3 modification layer features a desired low-density of interface state of 8 × 1010 cm-2 by estimation.

  17. Flexible CIGS solar cells on large area polymer foils with in-line deposition methods and application of alternative back contacts - Final report

    Energy Technology Data Exchange (ETDEWEB)

    Tiwari, A. N.

    2009-08-15

    This illustrated report for the Swiss Federal Office of Energy (SFOE) summarises the work performed within this project and also reports on synergies with other projects that helped to make a significant contribution to the development of CIGS thin film solar cells on flexible substrates such as polymer foils. The project's aims were to learn more about up-scaling issues and to demonstrate the abilities required for the processing of layers on large area polyimide foils for flexible CIGS solar cells. Custom-built evaporators that were designed and constructed in-house are described. A CIGS system for in-line deposition was also modified for roll-to-roll deposition and alternative electrical back contacts to conventional ones were evaluated on flexible polyimide foils. The objectives of the project and the results obtained are looked at and commented on in detail.

  18. Electron Barrier Formation at the Organic-Back Contact Interface is the First Step in Thermal Degradation of Polymer Solar Cells

    KAUST Repository

    Sachs-Quintana, I. T.

    2014-03-24

    Long-term stability of polymer solar cells is determined by many factors, one of which is thermal stability. Although many thermal stability studies occur far beyond the operating temperature of a solar cell which is almost always less than 65 °C, thermal degradation is studied at temperatures that the solar cell would encounter in real-world operating conditions. At these temperatures, movement of the polymer and fullerenes, along with adhesion of the polymer to the back contact, creates a barrier for electron extraction. The polymer barrier can be removed and the performance can be restored by peeling off the electrode and depositing a new one. X-ray photoelectron spectroscopy measurements reveal a larger amount of polymer adhered to electrodes peeled from aged devices than electrodes peeled from fresh devices. The degradation caused by hole-transporting polymer adhering to the electrode can be suppressed by using an inverted device where instead of electrons, holes are extracted at the back metal electrode. The problem can be ultimately eliminated by choosing a polymer with a high glass transition temperature. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Low cost back contact heterojunction solar cells on thin c-Si wafers. Integrating laser and thin film processing for improved manufacturability

    Energy Technology Data Exchange (ETDEWEB)

    Hegedus, Steven S. [Univ. of Delaware, Newark, DE (United States)

    2015-09-08

    An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerfless techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to

  20. Low cost back contact heterojunction solar cells on thin c-Si wafers. integrating laser and thin film processing for improved manufacturability

    Energy Technology Data Exchange (ETDEWEB)

    Hegedus, Steven S. [Univ. of Delaware, Newark, DE (United States)

    2015-09-08

    An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerfless techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to

  1. Low temperature surface passivation of crystalline silicon and its application to interdigitated back contact silicon heterojunction (ibc-shj) solar cell

    Science.gov (United States)

    Shu, Zhan

    With the absence of shading loss together with improved quality of surface passivation introduced by low temperature processed amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction, the interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell exhibits a potential for higher conversion efficiency and lower cost than a traditional front contact diffused junction solar cell. In such solar cells, the front surface passivation is of great importance to achieve both high open-circuit voltage (Voc) and short-circuit current (Jsc). Therefore, the motivation of this work is to develop a low temperature processed structure for the front surface passivation of IBC-SHJ solar cells, which must have an excellent and stable passivation quality as well as a good anti-reflection property. Four different thin film materials/structures were studied and evaluated for this purpose, namely: amorphous silicon nitride (a-SiNx:H), thick amorphous silicon film (a-Si:H), amorphous silicon/silicon nitride/silicon carbide (a-Si:H/a-SiN x:H/a-SiC:H) stack structure with an ultra-thin a-Si:H layer, and zinc sulfide (ZnS). It was demonstrated that the a-Si:H/a-SiNx:H/a-SiC:H stack surpasses other candidates due to both of its excellent surface passivation quality (SRV<5 cm/s) and lower absorption losses. The low recombination rate at the stack structure passivated c-Si surface is found to be resulted from (i) field effect passivation due to the positive fixed charge (Q fix~1x1011 cm-2 with 5 nm a-Si:H layer) in a-SiNx:H as measured from capacitance-voltage technique, and (ii) reduced defect state density (mid-gap Dit~4x1010 cm-2eV-1) at a-Si:H/c-Si interface provided by a 5 nm thick a-Si:H layer, as characterized by conductance-frequency measurements. Paralleled with the experimental studies, a computer program was developed in this work based on the extended Shockley-Read-Hall (SRH) model of surface recombination. With the help of this program, the experimental

  2. Windowless CdSe/CdTe solar cells with differentiated back contacts: J-V, EQE, and photocurrent mapping.

    Science.gov (United States)

    Josell, Daniel; Debnath, Ratan; Ha, Jong Y; Guyer, Jonathan; Sahiner, Mehmet A; Reehil, Christopher J; Manners, William A; Nguyen, Nhan V

    2014-09-24

    This study presents windowless CdSe/CdTe thin film photovoltaic devices with in-plane patterning at a submicrometer length scale. The photovoltaic cells are fabricated upon two interdigitated comb electrodes prepatterned at micrometer length scale on an insulating substrate. CdSe is electrodeposited on one electrode, and CdTe is deposited by pulsed laser deposition over the entire surface of the resulting structure. Previous studies of symmetric devices are extended in this study. Specifically, device performance is explored with asymmetric devices having fixed CdTe contact width and a range of CdSe contact widths, and the devices are fabricated with improved dimensional tolerance. Scanning photocurrent microscopy (also known as laser beam induced current mapping) is used to examine local current collection efficiency, providing information on the spatial variation of performance that complements current-voltage and external quantum efficiency measurements of overall device performance. Modeling of carrier transport and recombination indicates consistency of experimental results for local and blanket illumination. Performance under simulated air mass 1.5 illumination exceeds 5% for all dimensions examined, and the best-performing device achieved 5.9% efficiency. PMID:25157419

  3. Back contact to film silicon on metal for photovoltaic cells

    Science.gov (United States)

    Branz, Howard M.; Teplin, Charles; Stradins, Pauls

    2013-06-18

    A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

  4. Emitter study of front junction back contact crystalline silicon solar cells%前结背接触晶硅太阳电池发射区研究

    Institute of Scientific and Technical Information of China (English)

    周涛; 陆晓东; 吴元庆; 刘兴辉; 吴春瑜

    2015-01-01

    利用Silvaco-TCAD仿真软件全面系统地分析了发射区表面浓度(cE)、结深(xj)及发射区覆盖比率(EF)对P型前结背接触晶硅太阳电池输出特性的影响。结果表明:基于常规低成本P型晶硅衬底(利用直拉法生长,电阻率为1.5Ω·cm,少子寿命为10μs)的前结背接触太阳电池,其上表面发射区表面浓度及结深对太阳电池的输出特性产生显著影响。上表面发射区表面浓度和结深越大,短波入射光外量子效率越小。当上表面发射区表面浓度为1×1019 cm–3,结深为0.2μm时,电池效率高达20.72%。侧面和下表面发射区表面浓度及结深对太阳电池输出特性的影响较小。但侧面和下表面发射区覆盖比率对太阳电池的输出特性产生显著影响。侧面和下表面发射区覆盖比率越大,太阳电池外量子效率和转换效率越高。%By using Silvaco-TCAD simulation software, the influences of the emitter surface concentration (cE), the junction depth (xj) and the emitter fraction (EF) on the output characteristics of P-type front junction back contact crystalline silicon solar cell was analyzed. The results show that the upper surface emitter surface concentration and the junction depth of the front junction back contact crystalline silicon solar cell based on conventional low-cost P-type silicon substrate (CZ growth method, the resistivity is 1.5Ω·cm, the minority carrier life is 10μs) have a noticeable effect on output characteristics of solar cells. The higher the upper surface emitter surface concentration, the deeper the junction depth, the lower the short wavelength incident light external quantum efficiency. When the upper surface emitter surface concentration is 1×1019 cm–3 and the junction depth is 0.2μm,the solar cell conversion efficiency reaches 20.72%. The side-surface and under-surface emitter surface concentration and the junction depth have a slight effect on output

  5. Optimization of substrate resistivity and light intensity of concentrator back junction back contact solar cell%聚光背结背接触太阳电池衬底电阻率和光强的优化研究

    Institute of Scientific and Technical Information of China (English)

    周涛; 陆晓东; 吴元庆; 李媛

    2016-01-01

    利用 TCAD 半导体器件仿真软件对中低倍聚光光伏系统中应用的 N 型插指背接触(Interdigitated Back Contact,IBC)单晶硅太阳电池的电学性能进行了仿真研究,全面系统地分析了不同衬底电阻率和光强对电池短路电流密度、开路电压、填充因子及转换效率的影响。结果表明:IBC太阳电池的电学性能受到衬底电阻率和光强的显著影响。当光强较小(0.1 W/cm2)时,随着衬底电阻率的增大,IBC太阳电池转换效率随之降低,最优的衬底电阻率为0.5Ω·cm。当光强较高(0.5~5 W/cm2)时,随着衬底电阻率的增大,IBC太阳电池转换效率随之增大,最优的衬底电阻率为3Ω·cm。当光强进一步增大(10~50 W/cm2)时,随着衬底电阻率的增大,IBC太阳电池转换效率呈现出先增大后减小的变化特点,最优的衬底电阻率为2Ω·cm。%The electrical properties of N-type interdigitated back contact mono-crystalline silicon solar cell used in medium and low CPV systems were studied by using TCAD semiconductor device simulation software. The influences of substrate resistivity and light intensity on IBC solar cell’s short-circuit current density, open-circuit voltage, filling factor and conversion efficiency were studied comprehensively and systematically. The research shows that the IBC solar cell’s electrical properties are affected by the substrate resistivity and light intensity significantly. When the light intensity is low (0.1 W/cm2), the IBC solar cell conversion efficiency decreases with the increase of substrate resistivity, and the optimum substrate resistivity is 0.5Ω·cm. When the light intensity is higher (0.5~5 W/cm2), the IBC solar cell conversion efficiency increases with the increase of substrate resistivity, and the optimum substrate resistivity is 3Ω·cm. When the light intensity increases further (10~50 W/cm2), the IBC solar cell conversion efficiency presents first

  6. Trap-assisted recombination for ohmic-like contact at p-type Cu(In,Ga)Se2/back n-type TCO interface in superstrate-type solar cell

    Science.gov (United States)

    Chantana, Jakapan; Arai, Hiroyuki; Minemoto, Takashi

    2016-07-01

    Cu(In,Ga)Se2 (CIGS) solar cells with superstrate-type structure of soda-lime glass (SLG)/epoxy/Al/ZnO:Al (AZO)/ZnO/CdS/CIGS/back n-type transparent conductive oxide (TCO) electrode/Al are fabricated by lift-off process. AZO or In2O3:Sn (ITO) is used as the back n-type TCO electrode. Ohmic-like contact between p-type CIGS and n-type D-TCO (damage-TCO), namely, D-AZO or D-ITO, is formed through the trap-assisted recombination. The D-TCO, meaning TCO with high sputtering damage on the CIGS surface, is prepared under the optimization of its deposition condition, namely, the power density of 2.4 W/cm2 for D-AZO or 3.3 W/cm2 for D-ITO, for high defect density on the CIGS surface to promote the trap-assisted recombination. Ultimately, the superstrate-type CIGS solar cell with a bi-layer of D-AZO/AZO as back n-type TCO electrode with conversion efficiency (η) of 9.2% is achieved, which is 70% of η of the substrate-type CIGS solar cell before lift-off process. The bi-layer of D-AZO/AZO is utilized owing to high resistivity of D-AZO (about 0.1 Ω cm). On the other hand, the superstrate-type CIGS solar cell with D-ITO as the back n-type TCO electrode with η of 10.4% is attained, which is 93.7% of η of the substrate-type CIGS solar cell, where the resistivity of the D-ITO layer is low at about 5.0 × 10-3 Ω cm.

  7. Electrical Characterization of Cu Composition Effects in CdS/CdTe Thin-Film Solar Cells with a ZnTe:Cu Back Contact: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Li, J. V.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Dhere, R. G.; Young, M. R.; Levi, D. H.

    2012-07-01

    We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at {approx}0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially increases with Cu concentration then decreases, reflects the interplay between the positive influences and negative influences (increasing deep levels in CdTe) of Cu.

  8. Inkjet Printing of Back Electrodes for Inverted Polymer Solar cells

    DEFF Research Database (Denmark)

    Angmo, Dechan; Sweelssen, Jorgen; Andriessen, Ronn;

    2013-01-01

    Evaporation is the most commonly used deposition method in the processing of back electrodes in polymer solar cells used in scientifi c studies. However, vacuum-based methods such as evaporation are uneconomical in the upscaling of polymer solar cells as they are throughput limiting steps...... in an otherwise fast roll-to-roll production line. In this paper, the applicability of inkjet printing in the ambient processing of back electrodes in inverted polymer solar cells with the structure ITO/ZnO/P3HT:PCBM/PEDOT:PSS/ Ag is investigated. Furthermore, the limitation of screen printing, the commonly...... employed method in the ambient processing of back electrode, is demonstrated and discussed. Both inkjet printing and screen printing of back electrodes are studied for their impact on the photovoltaic properties of the polymer solar cells measured under 1000 Wm−2 AM1.5. Each ambient processing technique...

  9. 具有复合背接触层的 CdTe多晶薄膜太阳电池%Polycrystalline CdTe thin- film solar cells with complex back contact layers

    Institute of Scientific and Technical Information of China (English)

    覃文治; 夏庚培; 郑家贵; 李卫; 蔡伟; 冯良桓; 蔡亚平; 黎兵; 张静全; 武莉莉

    2005-01-01

    To improve the properties of back contacts of CdTe solar cells, ZnTe:Cu and polycrystalline Cd1- xZnxTe films were deposited by simultaneous evaporation. Investigative data of the configuration and performance indicate that energy gap of Cd1- xZnxTe films assume quadratic connection with zinc content. With increasing of Cu content, energy gap of polycrystalline ZnTe:Cu will decrease. ZnTe/ZnTe:Cu or Cd1- xZnxTe/ZnTe:Cu back contacted cells can reduce the heterogeneous interface state density and modify the structure of energy band of the solar cells. Furthermore, diffusion of Cu can avoid by this compound films in CdTe solar cells. An efficiency of 13.38% of solar cell with dimension of 0.502cm2was fabricated.%为了提高 CdTe太阳电池的背接触性能,用共蒸发法制备了 ZnTe:Cu和 Cd1- xZnxTe多晶薄膜. 研究结果表明: Cd1- xZnxTe多晶薄膜的能隙与锌含量呈二次方关系, ZnTe:Cu多晶薄膜能隙随着掺 Cu浓度的增加而减小.分别用 ZnTe/ZnTe:Cu和 Cd1- xZnxTe/ZnTe:Cu复合膜作为背接触层,既能 修饰异质结界面,改善电池的能带结构,又能防止 Cu原子向电池内部扩散.因此获得了面积 0.502cm2,转换效率为 13.38%的 CdTe多晶薄膜太阳电池.

  10. Effect of ZnTe/ZnTe:Cu complex back-contact on device characteristics of CdTe solar cells

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    ZnTe/ZnTe:Cu complex layers deposited by vacuum co-evaporation have been in- troduced to CdS/CdTe solar cells. The C-V and I-V curves have been investigated and the effects of un-doped ZnTe layer thickness as well as annealing temperatures on I-V characteristics of CdTe solar cells have been studied. The results show that the “roll over” and “cross over” phenomena of dark and light I-V curves can be eliminated by use of ZnTe/ZnTe:Cu layer and the fill factor for a typical sample has increased to 73%, where there is no high resistance transparent layer. The reasons have been discussed combined with the energy band diagram of CdTe solar cells.

  11. Optical modeling of graphene contacted CdTe solar cells

    Science.gov (United States)

    Aldosari, Marouf; Sohrabpoor, Hamed; Gorji, Nima E.

    2016-04-01

    For the first time, an optical model is applied on CdS/CdTe thin film solar cells with graphene front or back contact. Graphene is highly conductive and is as thin as a single atom which reduces the light reflection and absorption, and thus enhances the light transmission to CdTe layer for a wide range of wavelengths including IR. Graphene as front electrode of CdTe devices led to loss in short circuit current density of 10% ΔJsc ≤ 15% compared to the conventional electrodes of TCO and ITO at CdS thickness of dCdS = 100 nm. In addition, all the multilayer graphene electrodes with 2, 4, and 7 graphene layers led to Jsc ≤ 20 mA/cm2. Therefore, we conclude that a single monolayer graphene with hexagonal carbon network reduces optical losses and enhances the carrier collection measured as Jsc. In another structure design, we applied the optical model to graphene back contacted CdS/CdTe device. This scheme allows double side irradiation of the cell which is expected to enhance the Jsc. We obtained 1 ∼ 6 , 23, and 38 mA/cm2 for back, front and bifacial illumination of graphene contacted CdTe cell with CdS = 100 nm. The bifacial irradiated cell, to be efficient, requires an ultrathin CdTe film with dCdTe ≤ 1 μm. In this case, the junction electric field extends to the back region and collects out the generated carriers efficiently. This was modelled by absorptivity rather than transmission rate and optical losses. Since the literature suggest that ZnO can increase the graphene conductivity and enhance the Jsc, we performed our simulations for a graphene/ZnO electrode (ZnO = 100 nm) instead of a single graphene layer.

  12. Design and fabrication of wraparound contact silicon solar cells

    Science.gov (United States)

    Scott-Monck, J. A.; Stella, P. M.; Avery, J. E.

    1972-01-01

    Both dielectric insulation and etched junction contact techniques were evaluated for use in wraparound contact cell fabrication. Since a suitable process for depositing the dielectrics was not achieved, the latter approach was taken. The relationship between loss of back contact and power degradation due to increased series resistance was established and used to design a simple contact configuration for 10 ohm-cm etched wraparound junction contact N/P cells. A slightly deeper junction significantly improved cell curve shape and the associated loss of current was regained by using thinner contact grid fingers. One thousand cells with efficiencies greater than 10.5% were fabricated to demonstrate the process.

  13. Simulation, elaboration and analysis of inter-digitated back-contacts photovoltaic cells; Simulation, fabrication et analyse de cellules photovoltaiques a contacts arrieres interdigites

    Energy Technology Data Exchange (ETDEWEB)

    Nichiporuk, O

    2005-05-15

    Solar energy is the most promising and powerful energy source among renewable energies. Photovoltaic electricity is obtained by direct transformation of the sunlight into electricity by means of photovoltaic cells. The objective of this work is to develop photovoltaic cells with back inter-digitated contacts. In the first chapter, we recall the principle of operation and the fundamental parameters of a photovoltaic cell. In a second part, we explain specificities of the inter-digitated back-contact solar cells, as well as the advantages and the disadvantages of such cells. In the second chapter we study the operation of inter-digitated back-contacts solar cells by two dimensional numerical simulation in order to optimize the geometry and doping profiles of the cell. The third chapter relates to the techniques and the methods of characterization of photovoltaic devices and components. In the fourth chapter, we describe the elaboration of inter-digitated back-contact cells. Three technological processes are presented in order to develop a simple technology for cells realization. In particular, we develop the auto-aligned technological process, which enables to elaborate the cells by using only one lithography step. In the last chapter we examine various approaches to reduce the surface recombination: SiO{sub 2}, silicon nitride deposited by UVCVD, hydrogen annealing, etc... (author)

  14. Simulation, elaboration and analysis of inter-digitated back contacts photovoltaic cells; Simulation, fabrication et analyse de cellules photovoltaiques a contacts arrieres interdigites

    Energy Technology Data Exchange (ETDEWEB)

    Nichiporuk, O

    2005-05-15

    Solar energy is the most promising and powerful energy source among renewable energies. Photovoltaic electricity is obtained by direct transformation of the sunlight into electricity by means of photovoltaic cells. The objective of this work is to develop photovoltaic cells with back inter-digitated contacts. In the first chapter, we recall the principle of operation and the fundamental parameters of a photovoltaic cell. In a second part, we explain specificities of the inter-digitated back-contact solar cells, as well as the advantages and the disadvantages of such cells. In the second chapter we study the operation of inter-digitated back-contacts solar cells by two dimensional numerical simulation in order to optimize the geometry and doping profiles of the cell. The third chapter relates to the techniques and the methods of characterization of photovoltaic devices and components. In the fourth chapter, we describe the elaboration of inter-digitated back-contact cells. Three technological processes are presented in order to develop a simple technology for cells realization. In particular, we develop the auto-aligned technological process, which enables to elaborate the cells by using only one lithography step. In the last chapter we examine various approaches to reduce the surface recombination: SiO{sub 2}, silicon nitride deposited by UVCVD, hydrogen annealing, etc.. (author)

  15. Enhanced photon management in silicon thin film solar cells with different front and back interface texture.

    Science.gov (United States)

    Tamang, Asman; Hongsingthong, Aswin; Jovanov, Vladislav; Sichanugrist, Porponth; Khan, Bakhtiar A; Dewan, Rahul; Konagai, Makoto; Knipp, Dietmar

    2016-01-01

    Light trapping and photon management of silicon thin film solar cells can be improved by a separate optimization of the front and back contact textures. A separate optimization of the front and back contact textures is investigated by optical simulations taking realistic device geometries into consideration. The optical simulations are confirmed by experimentally realized 1 μm thick microcrystalline silicon solar cells. The different front and back contact textures lead to an enhancement of the short circuit current by 1.2 mA/cm(2) resulting in a total short circuit current of 23.65 mA/cm(2) and an energy conversion efficiency of 8.35%. PMID:27481226

  16. Enhanced photon management in silicon thin film solar cells with different front and back interface texture

    Science.gov (United States)

    Tamang, Asman; Hongsingthong, Aswin; Jovanov, Vladislav; Sichanugrist, Porponth; Khan, Bakhtiar A.; Dewan, Rahul; Konagai, Makoto; Knipp, Dietmar

    2016-08-01

    Light trapping and photon management of silicon thin film solar cells can be improved by a separate optimization of the front and back contact textures. A separate optimization of the front and back contact textures is investigated by optical simulations taking realistic device geometries into consideration. The optical simulations are confirmed by experimentally realized 1 μm thick microcrystalline silicon solar cells. The different front and back contact textures lead to an enhancement of the short circuit current by 1.2 mA/cm2 resulting in a total short circuit current of 23.65 mA/cm2 and an energy conversion efficiency of 8.35%.

  17. Characteristics of Ga-Rich Cu(In, Ga)Se2 Solar Cells Grown on Ga-Doped ZnO Back Contact.

    Science.gov (United States)

    Sun, Qian; Kim, Kyoung-Bo; Jeon, Chan-Wook

    2016-05-01

    Wide bandgap Cu(In,Ga)Se2 (CIGS) thin films were deposited on Ga-rich Ga:ZnO (GZO) or MoN/GZO by single-stage co-evaporation. CIGS/TCO interface phases, such as resistive n-type Ga2O3, which are likely to have formed during the high temperature growth of Ga-rich CIGS, can deteriorate the solar cell performance. Although some Ga accumulation was observed in both of the CIGS/GZO and CIGS/MoN/GZO interfaces formed at 520 degrees C, the Ga oxide layer was absent. On the other hand, their current-voltage characteristics showed strong roll-over behavior regardless of the MoN diffusion barrier. The strong Schottky barrier formation at the CLGS/GZO junction due to the low work function of GZO, was attributed to current blocking at a high forward bias.

  18. Cross-Sectional Conductive Atomic Force Microscopy of CdTe/CdS Solar Cells: Effects of Etching and Back-Contact Processes; Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H. R.; Dhere, R. G.; Jiang, C.-S.; Gessert, T. A.; Duda, A. M.; Young, M.; Metzger, W. K.; Li, X.; Al-Jassim, M. M.

    2006-05-01

    We investigated the effects of the etching processes using bromine and nitric-phosphoric acid solutions, as well as of Cu, in the bulk electrical conductivity of CdTe/CdS solar cells using conductive atomic force microscopy (C-AFM). Although the etching process can create a conductive layer on the surface of the CdTe, the layer is very shallow. In contrast, the addition of a thin layer of Cu to the surface creates a conductive layer inside the CdTe that is not uniform in depth, is concentrated at grains boundaries, and may short circuit the device if the CdTe is too thin. The etching process facilitates the Cu diffusion and results in thicker conductive layers. The existence of this inhomogeneous conductive layer directly affects the current transport and is probably the reason for needing thick CdTe in these devices.

  19. Characteristics of Ga-Rich Cu(In, Ga)Se2 Solar Cells Grown on Ga-Doped ZnO Back Contact.

    Science.gov (United States)

    Sun, Qian; Kim, Kyoung-Bo; Jeon, Chan-Wook

    2016-05-01

    Wide bandgap Cu(In,Ga)Se2 (CIGS) thin films were deposited on Ga-rich Ga:ZnO (GZO) or MoN/GZO by single-stage co-evaporation. CIGS/TCO interface phases, such as resistive n-type Ga2O3, which are likely to have formed during the high temperature growth of Ga-rich CIGS, can deteriorate the solar cell performance. Although some Ga accumulation was observed in both of the CIGS/GZO and CIGS/MoN/GZO interfaces formed at 520 degrees C, the Ga oxide layer was absent. On the other hand, their current-voltage characteristics showed strong roll-over behavior regardless of the MoN diffusion barrier. The strong Schottky barrier formation at the CLGS/GZO junction due to the low work function of GZO, was attributed to current blocking at a high forward bias. PMID:27483870

  20. The reverse thermal breakdown characteristics of high efficiency back contact Solar cells%高效背接触太阳电池反向热击穿特性研究

    Institute of Scientific and Technical Information of China (English)

    周涛; 陆晓东; 吴元庆; 李媛

    2015-01-01

    Based on the non-isothermal energy balance transfer model, a simulation study of the reverse out characteris-tics of n-type interdigitated back contact ( IBC ) monocrystalline silicon solar cells was conducted by using the TCAD semiconductor devices simulation software.The performance of IBC solar cells was synthetically evaluated by using the photoelectric conversion efficiency and reverse thermal breakdown characteristic.The influences of the substrate resistivity, emitter surface concentration and emitter junction depth on IBC solar cells’ reverse thermal breakdown characteristic and conversion efficiency were studied in detail.The influence of the edge etching struc-ture of the emitter on the characteristics of reverse thermal breakdown of IBC solar cells was analyzed in detail by drawing on the technique of resisting secondary breakdown for bipolar power semiconductor devices and by applying this technique to IBC solar cells.The simulation results show that high crystalline silicon resistivity and low emitter surface concentration help to improve IBC solar cells’ reverse thermal breakdown characteristics, but can not help to improve the cell conversion efficiency;The deeper emitter junction is beneficial to improving the thermal break-down characteristic of IBC cells, as well as the solar cell conversion efficiency; When the emitter edge cylinder junction is incompletely etched, emitter edge’ s etching structure can not improve IBC solar cells’ thermal break-down characteristic;When the emitter edge cylinder junction is completely etched, the thermal breakdown thresh-old voltage increases with the increase of lateral etching distance.%基于非等温能量平衡传输模型,利用TCAD半导体器件仿真软件对N型插指背接触(IBC)单晶硅太阳电池反向输出特性进行了仿真研究。通过光电转换效率和反向热击穿特性对IBC太阳电池的性能进行综合评价。全面系统地分析了不同衬底电阻率、发

  1. 利用碳糊成膜法改进CdTe太阳电池背处理工艺%Back contact process of CdTe solar cell using the carbon-paste film forming

    Institute of Scientific and Technical Information of China (English)

    罗翀; 李娟; 李翔; 姚素英; 熊绍珍

    2011-01-01

    提出一种新型的制备Cd%太阳电池背接触方法。利用碳糊成膜法,将含Cu、Te的CdCl2浆状悬浊液涂覆在CdTe表面,只进行一次后退火,X射线衍射(XRD)、二次质子谱(SIMS)测试发现,就能同时达到CdCl2后处理的作用、形成CuxTe的缓冲层和降低背接触势垒的目的。实验结果表明。本文方法将传统的CdCl2后处理和形成CujWe缓冲层工艺合二为一,制备的CdTe太阳电池含较好控制了的Cu扩散,提高了电池性能;且制备工艺简单易行,可以较显著地降低成本,适合大面积生产。%A new method to prepare CdTe solar cell based on the carbon-paste film forming is introduced in this article. According to the analysis by XRD and SIMS spectrum,it was indicated that this technology integrates deposition of the back contact and CdC12 treatment into one process, which can not only form CuxTe layer but also activate with CdC12 simultaneously. In addition,it can control the diffusion of Cu,which could increase the efficiency. This simple method has the possible application in CdTe solar cell industry.

  2. Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Feldmann, Frank; Mueller, Ralph; Reichel, Christian; Hermle, Martin [Fraunhofer Institute for Solar Energy Systems, Heidenhofstrasse 2, 79110, Freiburg (Germany)

    2014-09-15

    This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so-called tunnel oxide passivated contact structure for Si solar cells. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high-temperature anneal needed for the realization of the passivation quality of the carrier-selective contacts. The good results on the phosphorus-doped (implied V{sub oc} = 725 mV) and boron-doped passivated contacts (iV{sub oc} = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    Science.gov (United States)

    Reichel, Christian; Feldmann, Frank; Müller, Ralph; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul; Hermle, Martin; Glunz, Stefan W.

    2015-11-01

    Passivated contacts (poly-Si/SiOx/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF2), the ion implantation dose (5 × 1014 cm-2 to 1 × 1016 cm-2), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iVoc) of 725 and 720 mV, respectively. For p-type passivated contacts, BF2 implantations into intrinsic a-Si yield well passivated contacts and allow for iVoc of 690 mV, whereas implanted B gives poor passivation with iVoc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved Voc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with Voc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

  4. Pilot production and testing of high efficiency wraparound contact solar cells

    Science.gov (United States)

    Gillanders, M.

    1981-01-01

    Modifications were made to the process sequence until a device capable of high performance and satisfactory processing yields could be fabricated on a production line. Pilot production resulted in a 2 x 4 cm screen printed dielectric wraparound contact solar cell with average 28 C, Air Mass Zero (AMO) conversion efficiencies of 14.2% and reasonable process yields. This high performance was obtained with two different back contact configurations, making the device acceptable for many applications.

  5. Total Internal Reflection for Effectively Transparent Solar Cell Contacts

    CERN Document Server

    Jahelka, Phillip; Atwater, Harry

    2016-01-01

    A new strategy for eliminating photocurrent losses due to the metal contacts on the front of a solar cell was proposed, simulated, and tested. By placing triangular cross-section lines of low refractive index on top of the contacts, total-internal reflection at the interface of the low-index triangles and the surrounding material can direct light away from the metal and into the photoactive absorber. Simulations indicated that losses can be eliminated for any incident angle, and that yearly energy production improvements commensurate with the metallized area are possible. Proof of principle experiments were carried out to eliminate the reflective losses of a commercial solar cell's busbar contact. Spatially resolved laser beam induced current measurements demonstrated that reflection losses due to the busbar were reduced by voids with triangular cross-section.

  6. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    Science.gov (United States)

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement. PMID:26736028

  7. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    Science.gov (United States)

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

  8. Eutectic bonding of contacts to silicon solar cells

    Science.gov (United States)

    Giuliano, M. N.

    A process of eutectic wetting and bonding of contact preforms is described which can serve as weld points for interconnection of solar cells. The procedure obviates the need for welding too close to the shallow diffused junction of a solar cell and therefore minimizes mechanical or electrical degradation that is likely when welding directly to the cell metallization. In addition, control of welding parameters is simplified because the weld interconnection is now made to a relatively thick metal preform which is firmly attached to the solar cell. Gold clad kovar was used in this preliminary study. Bond strength was excellent and survived temperature cycling to liquid nitrogen temperature. Electrical performance degradation after alloying was erratic and varied from little or no degradation to severe shunting. The reasons for the loss in fill-factor which is frequently encountered with the present process and choice of materials are not clear at this time. Possible explanations and recommendations for future work are discussed.

  9. Study of back reflectors for thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, H.; Mai, Y. [Baoding Tianwei Solarfilms Co., Ltd., Baoding 071051 (China); Wan, M. [Department of Chemistry and Material Science, Hunan Institute of Humanities, Science and Technology, Loudi 417000 (China); Gao, J.; Wang, Y.; He, T.; Feng, Y.; Yin, J.; Du, J.; Wang, J.; Sun, R. [Baoding Tianwei Solarfilms Co., Ltd., Baoding 071051 (China); Huang, Y., E-mail: y.huang@btw-solarfilms.com [Baoding Tianwei Solarfilms Co., Ltd., Baoding 071051 (China)

    2013-07-31

    In this study, the reflection properties of transparent conductive oxide (TCO) films i.e. aluminum doped zinc oxide (ZnO:Al) and boron doped zinc oxide (ZnO:B) films plus aluminum (Al) films or white polyvinyl butyral (PVB) foils, which are usually used as the combined back reflectors of thin film silicon solar cells, are investigated. Sputtered ZnO:Al films were etched in diluted hydrochloric acid (1%) to achieve rough surface structures while textured ZnO:B films were directly prepared by a low pressure chemical vapor deposition technique. It is found that the rough TCO/Al reflectors show a low total reflection, which is mainly due to the parasitic absorption by the surface plasmons at the rough TCO/Al interfaces as well as the absorption in the TCO films. Differently, the rough TCO/white PVB foil reflectors display a slightly high light reflection regardless of the influence of the rough interface without the excitation of surface plasmons. Thus, the TCO/white PVB foil back reflectors could be a good candidate with respect to light utilization when they are applied in thin film silicon solar cells. - Highlights: • White polyvinyl butyral and transparent conductive oxide materials are used. • The reflection properties of TCO/Al and TCO/white PVB foil reflectors are studied. • The ZnO:Al and ZnO:B films are used as two types of TCO materials. • TCO/white PVB foil reflector shows a high reflection compared to TCO/Al reflector.

  10. Development of LASER fired contacts on silicon heterojunction solar cells for the application to rear contact structures

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, D.; Desrues, T.; Ribeyron, P.J. [INES-CEA, Le Bourget du Lac (France); Orpella, A.; Martin, I.; Voz, C.; Alcubilla, R. [Grup de Recerca en Micro i Nanotecnologies, Universitat Politecnica de Catalunya, Barcelona (Spain)

    2010-04-15

    In this work, we present our progress in contacting both doped and undoped a-Si:H layers using a LASER tool and show some applications for three different HJ solar cell designs: standard (p-type), rear emitter (n-type) and back contact (n-type). First, we have fabricated 25 cm{sup 2} standard and rear emitter double heterojunction (DHJ) solar cells on planar 1-5 {omega}.cm n-type FZ c-Si wafers using intrinsic instead of the p-doped a-Si:H layers. The influence of the different parameters of the LASER firing (pitch, number of pulses and energy) has been deeply studied to find optimized conditions. Solar cells have been obtained systematically with reasonable efficiencies although we have observed that the V{sub oc} is limiting the efficiency. Finally, we have also performed the Laser Fired Contacts (LFC) on lowly-doped (p) a-Si:H layers to compare the results obtained. We have observed that the LFC of the rear emitter contact enhances both short circuit current and fill factor while keeping the same V{sub oc} (646 mV). This leads to a 0.8% absolute increase of the cell efficiency. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Inverted Silicon Nanopencil Array Solar Cells with Enhanced Contact Structures

    Science.gov (United States)

    Liang, Xiaoguang; Shu, Lei; Lin, Hao; Fang, Ming; Zhang, Heng; Dong, Guofa; Yip, SenPo; Xiu, Fei; Ho, Johnny C.

    2016-01-01

    Although three-dimensional nanostructured solar cells have attracted extensive research attention due to their superior broadband and omnidirectional light-harvesting properties, majority of them are still suffered from complicated fabrication processes as well as disappointed photovoltaic performances. Here, we employed our newly-developed, low-cost and simple wet anisotropic etching to fabricate hierarchical silicon nanostructured arrays with different solar cell contact design, followed by systematic investigations of their photovoltaic characteristics. Specifically, nano-arrays with the tapered tips (e.g. inverted nanopencils) are found to enable the more conformal top electrode deposition directly onto the nanostructures for better series and shunt conductance, but its insufficient film coverage at the basal plane would still restrict the charge carrier collection. In contrast, the low-platform contact design facilitates a substantial photovoltaic device performance enhancement of ~24%, as compared to the one of conventional top electrode design, due to the shortened current path and improved lateral conductance for the minimized carrier recombination and series resistance. This enhanced contact structure can not only maintain excellent photon-trapping behaviors of nanostructures, but also help to eliminate adverse impacts of these tapered nano-morphological features on the contact resistance, providing further insight into design consideration in optimizing the contact geometry for high-performance nanostructured photovoltaic devices. PMID:27671709

  12. CdTe/CdS solar cells with transparent contacts

    Energy Technology Data Exchange (ETDEWEB)

    Birkmire, R.W.; McCandless, B.E.; Shafarman, W.N.

    1988-01-15

    Evaporated CdTe/CdS solar cells with a transparent Cu-indium tin oxide contact have been made with an efficiency greater than 8.5%. The deposition of single-phase CdTe films from a compound source required a cadmium-to-tellurium flux ratio of 1.7 incident on the substrate. To obtain the needed p-type conductivity of the CdTe films required a high temperature heat treatment in air which reduced the transmission through the CdTe film owing to the formation of a CdTeO/sub 3/ surface layer. The heating and cooling rates used for the heat treatment affected the open-circuit voltage and contact resistance of the cells. The total subband gap absorption of the entire cell is 40%-50%.

  13. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Reichel, Christian, E-mail: christian.reichel@ise.fraunhofer.de [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401 (United States); Feldmann, Frank; Müller, Ralph; Hermle, Martin; Glunz, Stefan W. [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul [National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401 (United States)

    2015-11-28

    Passivated contacts (poly-Si/SiO{sub x}/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF{sub 2}), the ion implantation dose (5 × 10{sup 14 }cm{sup −2} to 1 × 10{sup 16 }cm{sup −2}), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV{sub oc}) of 725 and 720 mV, respectively. For p-type passivated contacts, BF{sub 2} implantations into intrinsic a-Si yield well passivated contacts and allow for iV{sub oc} of 690 mV, whereas implanted B gives poor passivation with iV{sub oc} of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V{sub oc} of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF{sub 2} implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V{sub oc} of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

  14. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    International Nuclear Information System (INIS)

    Passivated contacts (poly-Si/SiOx/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF2), the ion implantation dose (5 × 1014 cm−2 to 1 × 1016 cm−2), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iVoc) of 725 and 720 mV, respectively. For p-type passivated contacts, BF2 implantations into intrinsic a-Si yield well passivated contacts and allow for iVoc of 690 mV, whereas implanted B gives poor passivation with iVoc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved Voc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with Voc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts

  15. Upscaling of Perovskite Solar Cells: Fully Ambient Roll Processing of Flexible Perovskite Solar Cells with Printed Back Electrodes

    DEFF Research Database (Denmark)

    Schmidt, Thomas Mikael; Larsen-Olsen, Thue Trofod; Carlé, Jon Eggert;

    2015-01-01

    A scaling effort on perovskite solar cells is presented where the device manufacture is progressed onto fl exible substrates using scalable techniques such as slot-die roll coating under ambient conditions. The printing of the back electrode using both carbon and silver is essential to the scaling...... fabrication process, which is comparable to what is observed for other printable solar cell technologies such as polymer solar cells. The power conversion effi ciency (PCE) for devices processed using spin coating on indium tin oxide (ITO)- glass with evaporated back electrode yields a PCE of 9.4%. The same...

  16. Nanowire CdS-CdTe Solar Cells with Molybdenum Oxide as Contact

    Science.gov (United States)

    Dang, Hongmei; Singh, Vijay P.

    2015-10-01

    Using a 10 nm thick molybdenum oxide (MoO3-x) layer as a transparent and low barrier contact to p-CdTe, we demonstrate nanowire CdS-CdTe solar cells with a power conversion efficiency of 11% under front side illumination. Annealing the as-deposited MoO3 film in N2 resulted in a reduction of the cell’s series resistance, from 9.97 Ω/cm2 to 7.69 Ω/cm2, and increase in efficiency from 9.9% to 11%. Under illumination from the back, the MoO3-x/Au side, the nanowire solar cells yielded Jsc of 21 mA/cm2 and efficiency of 8.67%. Our results demonstrate use of a thin layer transition metal oxide as a potential way for a transparent back contact to nanowire CdS-CdTe solar cells. This work has implications toward enabling a novel superstrate structure nanowire CdS-CdTe solar cell on Al foil substrate by a low cost roll-to roll fabrication process.

  17. Constructal Optimization of Top Contact Metallization of a Photovoltaic Solar Cell

    OpenAIRE

    Santanu Bandyopadhyay; Aditya Bhakta

    2005-01-01

    A top contact metallization of a photovoltaic solar cell collects the current generated by incident solar radiation. Several power-loss mechanisms are associated with the current flow through the front contact grid. The design of the top metal contact grid is one of the most important areas of efficient photovoltaic solar cell design. In this paper, an approach based on the constructal theory is proposed to design the grid pattern in a photovoltaic solar cell, minimizing total resistive losse...

  18. Broadband back grating design for thin film solar cells

    KAUST Repository

    Janjua, Bilal

    2013-01-01

    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  19. Ink-Jet Printer Forms Solar-Cell Contacts

    Science.gov (United States)

    Alexander, Paul, Jr.; Vest, R. W.; Binford, Don A.; Tweedell, Eric P.

    1988-01-01

    Contacts formed in controllable patterns with metal-based inks. System forms upper metal contact patterns on silicon photovoltaic cells. Uses metallo-organic ink, decomposes when heated, leaving behind metallic, electrically conductive residue in printed area.

  20. Solar LBIC scanning of high-efficiency point-contact silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Vorster, F.J.; Dyk, E.E. van [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University (NMMU), Port Elizabeth (South Africa)

    2008-07-01

    The induced current response from a High Efficiency Concentrator (HECO) monocrystaline Si solar cell was mapped as a function of surface position and cell bias by using a solar light beam induced current (S-LBIC) mapping system while at the same time dynamically biasing the whole cell with an external voltage. Recombination accounts for a major portion of the reduction in quantum efficiency in these cells. This paper examines the spatial distribution of defect mechanisms causing a reduction of collected photocurrent of the backside point-contact device structure while under spot illumination. By examining the bias dependence of the S-LBIC maps, the identification of current loss mechanisms of solar cells under concentrated solar irradiance may be improved. The techniques employed to interpret the spatially distributed I-V curves are discussed and results presented. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells

    NARCIS (Netherlands)

    Demontis, V.; Sanna, C.; Melskens, J.; Santbergen, R.; Smets, A.H.M.; Damiano, A.; Zeman, M.

    2013-01-01

    Thin oxide interlayers are commonly added to the back reflector of thin-film silicon solar cells to increase their current. To gain more insight in the enhancement mechanism, we tested different back reflector designs consisting of aluminium-doped zinc oxide (ZnO:Al) and/or hydrogenated silicon oxid

  2. Nanowire CdS-CdTe Solar Cells with Molybdenum Oxide as Contact

    OpenAIRE

    Hongmei Dang; Singh, Vijay P

    2015-01-01

    Using a 10 nm thick molybdenum oxide (MoO3−x) layer as a transparent and low barrier contact to p-CdTe, we demonstrate nanowire CdS-CdTe solar cells with a power conversion efficiency of 11% under front side illumination. Annealing the as-deposited MoO3 film in N2 resulted in a reduction of the cell’s series resistance, from 9.97 Ω/cm2 to 7.69 Ω/cm2, and increase in efficiency from 9.9% to 11%. Under illumination from the back, the MoO3−x/Au side, the nanowire solar cells yielded Jsc of 21 mA...

  3. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

  4. Determination of the specific shunt resistances under and away from the front contacts of solar cell

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    New structure of front contacts was devised and fabricated for accurately measuring the resistances under and away from the front contacts of silicon solar cell with the results showing that the former was much worse. The sample preparing sequence was completely compatible with the conventional solar cell manufacturing process, which demonstrated the convenience of this approach. With the aid of this characterization technique, detailed information can be obtained on the solar cell structure, material ingredients and process parameters, especially the sintering process.

  5. Effect of the back surface topography on the efficiency in silicon solar cells

    International Nuclear Information System (INIS)

    Different processes are used on the back surface of silicon wafers to form cells falling into three groups: textured, planar, and sawed-off pyramid back surface. The characteristic parameters of the cells, ISC, VOC, FF, Pm, and Eff, are measured. All these parameters of the planar back surface cells are the best. The FF, Pm, and Eff of sawed-off pyramid back surface cells are superior to textured back surface cells, although ISC and VOC are lower. The parasitic resistance is analyzed to explain the higher FF of the sawed-off pyramid back surface cells. The cross-section scanning electron microscopy (SEM) pictures show the uniformity of the aluminum-silicon alloy, which has an important effect on the back surface recombination velocity and the ohmic contact. The measured value of the aluminum back surface field thickness in the SEM picture is in good agreement with the theoretical value deduced from the Al-Si phase diagram. It is shown in an external quantum efficiency (EQE) diagram that the planar back surface has the best response to a wavelength between 440 and 1000 nm and the sawed-off back surface has a better long wavelength response.

  6. The role of front and back electrodes in parasitic absorption in thin-film solar cells

    Directory of Open Access Journals (Sweden)

    Boccard Mathieu

    2014-07-01

    Full Text Available When it comes to parasitic absorption in thin-film silicon solar cells, most studies focus on one electrode only, most of the time the substrate (in n-i-p configuration or superstrate (in p-i-n configuration. We investigate here simultaneously the influence of the absorption in both front and back electrodes on the current density of tandem micromorph solar cells in p-i-n configuration. We compare four possible combinations of front and back electrodes with two different doping levels, but identical sheet resistance and identical light-scattering properties. In the infrared part of the spectrum, parasitic absorption in the front or back electrode is shown to have a similar effect on the current generation in the cell, which is confirmed by modeling. By combining highly transparent front and back ZnO electrodes and high-quality silicon layers, a micromorph device with a stabilized efficiency of 11.75% is obtained.

  7. The role of front and back electrodes in parasitic absorption in thin-film solar cells

    Science.gov (United States)

    Boccard, Mathieu; Cuony, Peter; Hänni, Simon; Stuckelberger, Michael; Haug, Franz-Josef; Meillaud, Fanny; Despeisse, Matthieu; Ballif, Christophe

    2014-07-01

    When it comes to parasitic absorption in thin-film silicon solar cells, most studies focus on one electrode only, most of the time the substrate (in n-i-p configuration) or superstrate (in p-i-n configuration). We investigate here simultaneously the influence of the absorption in both front and back electrodes on the current density of tandem micromorph solar cells in p-i-n configuration. We compare four possible combinations of front and back electrodes with two different doping levels, but identical sheet resistance and identical light-scattering properties. In the infrared part of the spectrum, parasitic absorption in the front or back electrode is shown to have a similar effect on the current generation in the cell, which is confirmed by modeling. By combining highly transparent front and back ZnO electrodes and high-quality silicon layers, a micromorph device with a stabilized efficiency of 11.75% is obtained.

  8. The role of front and back electrodes in parasitic absorption in thin-film solar cells

    OpenAIRE

    Boccard Mathieu; Cuony Peter; Hänni Simon; Stuckelberger Michael; Haug Franz-Josef; Meillaud Fanny; Despeisse Matthieu; Ballif Christophe

    2014-01-01

    When it comes to parasitic absorption in thin-film silicon solar cells, most studies focus on one electrode only, most of the time the substrate (in n-i-p configuration) or superstrate (in p-i-n configuration). We investigate here simultaneously the influence of the absorption in both front and back electrodes on the current density of tandem micromorph solar cells in p-i-n configuration. We compare four possible combinations of front and back electrodes with two different doping levels, but ...

  9. Rationally designed, three-dimensional carbon nanotube back-contacts for efficient solar devices

    Energy Technology Data Exchange (ETDEWEB)

    Pint, Cary L.; Takei, Kuniharu; Kapadia, Rehan; Zheng, Maxwell; Ford, Alexandra C.; Zhang, Junjun [Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA (United States); Jamshidi, Arash; Wu, Ming [Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA (United States); Bardhan, Rizia; Urban, Jeffrey J. [Molecular Foundry Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Ager, Joel W. [Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Oye, Michael M. [NASA Ames Research Center, Moffett Field, CA (United States); Javey, Ali [Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States)

    2011-11-15

    Structure matters in solar-to-fuel conversion efficiency, demonstrated for TiO{sub 2} coated onto designed three-dimensional (3-D) carbon nanofiber scaffolds. Performance enhancement of up to three times compared to flat films can be mostly attributed to structurally-enhanced carrier collection and photon management processes. Using 3-D templates to balance light absorption depth and carrier collection can lead to a new class of high efficiency and cheap energy conversion devices. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Buried contact multijunction thin film silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Green, M. [Univ. of New South Wales, Sydney (Australia)

    1995-08-01

    In early 1994, the Center for Photovoltaic Devices and Systems announced the filing of patent applications on an improved silicon thin film photovoltaic module approach. With material costs estimated to be about 20 times lower than those in present silicon solar cell modules along with other production advantages, this technology appears likely to make low cost, high performance solar modules available for the first time. This paper describes steps involved in making a module and module performance.

  11. A PROCESS FOR DEPOSITING METAL CONTACTS ON A BURIED GRID SOLAR CELL AND A SOLAR CELL OBTAINED BY THE PROCESS

    DEFF Research Database (Denmark)

    2002-01-01

    A buried grid solar cell is manufactured by a process for metallising one or more metal contacts of a buried grid solar cell having a body of doped semiconductor material, wherein the electrical contact(s) is/are provided by conducting material being arranged in a pattern of one or more grooves...... into the semiconductor material with the following steps: applying a seed layer on the exposed semiconductor material in the grooves by elecroless plating followed by sintering, applying an electrically conducting base layer by electroless plating on top of said seed layer and filling the grooves with an electrically...... conducting contact forming material by electrolytic plating using a conventional electrolytic bath further comprising a levelling additive and a suppressing additive and using substantially constant cell voltage....

  12. An optimized top contact design for solar cell concentrators

    Science.gov (United States)

    Desalvo, Gregory C.; Barnett, Allen M.

    1985-01-01

    A new grid optimization scheme is developed for point focus solar cell concentrators which employs a separated grid and busbar concept. Ideally, grid lines act as the primary current collectors and receive all of the current from the semiconductor region. Busbars are the secondary collectors which pick up current from the grids and carry it out of the active region of the solar cell. This separation of functions leads to a multithickness metallization design, where the busbars are made larger in cross section than the grids. This enables the busbars to carry more current per unit area of shading, which is advantageous under high solar concentration where large current densities are generated. Optimized grid patterns using this multilayer concept can provide a 1.6 to 20 percent increase in output power efficiency over optimized single thickness grids.

  13. Fabrication of Polymer Solar Cells Using Aqueous Processing for All Layers Including the Metal Back Electrode

    DEFF Research Database (Denmark)

    Søndergaard, Roar; Helgesen, Martin; Jørgensen, Mikkel;

    2011-01-01

    The challenges of printing all layers in polymer solar cells from aqueous solution are met by design of inks for the electron-, hole-, active-, and metallic back electrode-layers. The conversion of each layer to an insoluble state after printing enables multilayer formation from the same solvent...

  14. Metallization improvement on fabrication of interdigitated backside and double sided buried contact solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jiun-Hua; Cotter, Jeffrey E. [Center of Excellence for Advanced Silicon Photovoltaics and Photonics, University of New South Wales, Sydney NSW 2052 (Australia)

    2005-04-01

    Metallization based on electroless metal plating of nickel and copper is a simple, cost-effective process used in the fabrication of Buried Contact silicon solar cells. Whereas the electroless Ni-Cu metallization scheme works well for metal deposition on early Buried Contact solar cells, in which deposition was required only on phosphorus diffused contact regions, more care is required for advanced Buried Contact solar cell designs that require simultaneous deposition on to both phosphorus and boron diffused contact regions. In this paper, we examine two key issues related to the metallization in these solar cells. Firstly we demonstrate an improved buffered hydrofluoric acid etch process for simultaneous removal of borosilicate and borophosphosilicate glasses from the contact regions prior to electroless deposition of nickel with good etch selectivity against silicon dioxide masking films. Secondly, we demonstrate an improved process for nucleation of the nickel layer on both phosphorus and boron diffused contact areas based on immersion palladium chloride activation of the plating surfaces. N-type double-sided buried contact solar cells metallized by processing introduced in this study show improvement on absolute efficiency of more than 3%.

  15. Numerical study on short-circuit current of single layer organic solar cells with Schottkey contacts

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The influence of the cathode work function,carriers mobilities and temperature on the short-circuit current of single layer organic solar cells with Schottkey contacts was numerically studied,and the quantitative dependences of the short-circuit current on these quantities were obtained.The results provide the theoretical foundation for experimental study of single layer organic solar cells with Schottkey contacts.

  16. Reflectance improvement by thermal annealing of sputtered Ag/ZnO back reflectors in a-Si:H thin film silicon solar cells

    DEFF Research Database (Denmark)

    Haug, Franz-Josef; Söderström, Karin; Pahud, Céline;

    2011-01-01

    Silver can be used as the back contact and reflector in thin film silicon solar cells. When deposited on textured substrates, silver films often exhibit reduced reflectance due to absorption losses by the excitation of surface plasmon resonances. We show that thermal annealing of the silver back...... reflector increases its reflectance drastically. The process is performed at low temperature (150°C) to allow the use of plastic sheets such as polyethylene naphthalate and increases the efficiency of single junction amorphous solar cells dramatically. We present the best result obtained on a flexible...

  17. Solution processing of back electrodes for organic solar cells with inverted architecture

    NARCIS (Netherlands)

    Galagan, Y.; Shanmugam, S.; Teunissen, J.P.; Eggenhuisen, T.M.; Biezemans, A.F.K.V.; Van Gijseghem, T.; Groen, W.A.; Andriessen, R.

    2014-01-01

    Solution processing of the electrodes is a big challenge towards scaling up and R2R processing of organic solar cells. Inkjet printing is a non-contact printing method, it can be realized by solution processing at ambient condition and provides freedom of shape in the electrode pattern. The inkjet a

  18. Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Stradins, P.; Essig, S.; Nemeth, W.; Lee, B. G.; Young, D.; Norman, A.; Liu, Y.; Luo, J.-W.; Warren, E.; Dameron, A.; LaSalvia, V.; Page, M.; Rohatgi, A.; Upadhyaya, A.; Rounsaville, B.; Ok, Y.-W.; Glunz, S.; Benick, J.; Feldmann, F.; Hermle, M.

    2014-12-01

    We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected work function and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts contribute to cell efficiency as well as design flexibility, process robustness, and a simplified process flow. Material choices for the transport layer are examined, including transparent n-type oxides and n+-doped poly-Si. SiO2/n+-poly-Si full-area, induced-junction back surface field contacts to n-FZ and n-Cz Si are incorporated into high efficiency cells with deep, passivated boron emitters.

  19. Selective deposition contact patterning using atomic layer deposition for the fabrication of crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Selective deposition contact (SDC) patterning was applied to fabricate the rear side passivation of crystalline silicon (Si) solar cells. By this method, using screen printing for contact patterning and atomic layer deposition for the passivation of Si solar cells with Al2O3, we produced local contacts without photolithography or any laser-based processes. Passivated emitter and rear-contact solar cells passivated with ozone-based Al2O3 showed, for the SDC process, an up-to-0.7% absolute conversion-efficiency improvement. The results of this experiment indicate that the proposed method is feasible for conversion-efficiency improvement of industrial crystalline Si solar cells. - Highlights: • We propose a local contact formation process. • Local contact forms a screen print and an atomic layer deposited-Al2O3 film. • Ozone-based Al2O3 thin film was selectively deposited onto patterned silicon. • Selective deposition contact patterning method can increase cell-efficiency by 0.7%

  20. Spectral analysis of the angular distribution function of back reflectors for thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Escarre, J.; Villar, F.; Asensi, J.M.; Bertomeu, J.; Andreu, J. [CeRMAE - Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, 08028 Barcelona (Spain)

    2006-06-15

    Nowadays, one of the most important challenges to enhance the efficiency of thin film silicon solar cells is to increase the short circuit intensity by means of optical confinement methods, such as textured back-reflector structures. In this work, two possible textured structures to be used as back reflectors for n-i-p solar cells have been optically analyzed and compared to a smooth one by using a system which is able to measure the angular distribution function (ADF) of the scattered light in a wide spectral range (350-1000nm). The accurate analysis of the ADF data corresponding to the reflector structures and to the {mu}c-Si:H films deposited onto them allows the optical losses due to the reflector absorption and its effectiveness in increasing light absorption in the {mu}c-Si:H layer, mainly at long wavelengths, to be quantified. (author)

  1. The formation mechanism for printed silver-contacts for silicon solar cells

    OpenAIRE

    Fields, Jeremy D; Ahmad, Md. Imteyaz; Pool, Vanessa L.; Yu, Jiafan; Van Campen, Douglas G.; Parilla, Philip A.; Toney, Michael F; van Hest, Maikel F. A. M.

    2016-01-01

    Screen-printing provides an economically attractive means for making Ag electrical contacts to Si solar cells, but the use of Ag substantiates a significant manufacturing cost, and the glass frit used in the paste to enable contact formation contains Pb. To achieve optimal electrical performance and to develop pastes with alternative, abundant and non-toxic materials, a better understanding the contact formation process during firing is required. Here, we use in situ X-ray diffraction during ...

  2. Effects of Back Contact Instability on Cu2ZnSnS4 Devices and Processes

    OpenAIRE

    Scragg, Jonathan J.; Kubart, Tomas; Wätjen, Timo; Ericson, Tove; Linnarsson, Margareta K.; Platzer-Björkman, Charlotte

    2013-01-01

    Cu2ZnSnS4 (CZTS) is a promising material for thin film solar cells based on sustainable resources. This paper explores some consequences of the chemical instability between CZTS and the standard Mo “back contact” layer used in the solar cell. Chemical passivation of the back contact interface using titanium nitride (TiN) diffusion barriers, combined with variations in the CZTS annealing process, enables us to isolate the effects of back contact chemistry on the electrical properties of the CZ...

  3. Tunnel oxide passivated rear contact for large area n-type front junction silicon solar cells providing excellent carrier selectivity

    Directory of Open Access Journals (Sweden)

    Yuguo Tao

    2016-01-01

    Full Text Available Carrier-selective contact with low minority carrier recombination and efficient majority carrier transport is mandatory to eliminate metal-induced recombination for higher energy conversion efficiency for silicon (Si solar cells. In the present study, the carrier-selective contact consists of an ultra-thin tunnel oxide and a phosphorus-doped polycrystalline Si (poly-Si thin film formed by plasma enhanced chemical vapor deposition (PECVD and subsequent thermal crystallization. It is shown that the poly-Si film properties (doping level, crystallization and dopant activation anneal temperature are crucial for achieving excellent contact passivation quality. It is also demonstrated quantitatively that the tunnel oxide plays a critical role in this tunnel oxide passivated contact (TOPCON scheme to realize desired carrier selectivity. Presence of tunnel oxide increases the implied Voc (iVoc by ~ 125 mV. The iVoc value as high as 728 mV is achieved on symmetric structure with TOPCON on both sides. Large area (239 cm2 n-type Czochralski (Cz Si solar cells are fabricated with homogeneous implanted boron emitter and screen-printed contact on the front and TOPCON on the back, achieving 21.2% cell efficiency. Detailed analysis shows that the performance of these cells is mainly limited by boron emitter recombination on the front side.

  4. Magnesium Fluoride Electron-Selective Contacts for Crystalline Silicon Solar Cells.

    Science.gov (United States)

    Wan, Yimao; Samundsett, Chris; Bullock, James; Allen, Thomas; Hettick, Mark; Yan, Di; Zheng, Peiting; Zhang, Xinyu; Cui, Jie; McKeon, Josephine; Javey, Ali; Cuevas, Andres

    2016-06-15

    In this study, we present a novel application of thin magnesium fluoride films to form electron-selective contacts to n-type crystalline silicon (c-Si). This allows the demonstration of a 20.1%-efficient c-Si solar cell. The electron-selective contact is composed of deposited layers of amorphous silicon (∼6.5 nm), magnesium fluoride (∼1 nm), and aluminum (∼300 nm). X-ray photoelectron spectroscopy reveals a work function of 3.5 eV at the MgF2/Al interface, significantly lower than that of aluminum itself (∼4.2 eV), enabling an Ohmic contact between the aluminum electrode and n-type c-Si. The optimized contact structure exhibits a contact resistivity of ∼76 mΩ·cm(2), sufficiently low for a full-area contact to solar cells, together with a very low contact recombination current density of ∼10 fA/cm(2). We demonstrate that electrodes functionalized with thin magnesium fluoride films significantly improve the performance of silicon solar cells. The novel contacts can potentially be implemented also in organic optoelectronic devices, including photovoltaics, thin film transistors, or light emitting diodes. PMID:27219911

  5. Understanding and development of cost-effective industrial aluminum back surface field (Al-BSF) silicon solar cells

    Science.gov (United States)

    Chen, Nian

    For the long-term strategy of gradual decarbonization of the world's energy supply, high penetration of PV electricity is critical in the future world energy landscape. In order to achieve this, solar electricity with competitive cost to fossil fuel energy is necessary. To be able to obtain high efficiency solar cells, many advanced cell architectures have been developed commercially by PV industry. However, the fabrication of these cells necessitates complex processing steps and high requirements on semiconductor materials, which make it not as cost-effective as the state-of-the-art conventional Al-BSF structure. In order to keep the cost of PV cell low and improve on the efficiency with fewer processing steps, this thesis work focuses on the understanding of the conventional Al-BSF solar cell structure. The research work therefore, focuses on the (i) design, and modeling of front metal electrodes including the use of multi-bus-bar capable of decreasing the gridline resistance, (ii) fine-line printing and (iii) metal contact co-firing using high belt speed that is not common to the solar industry to achieve ~20% efficient industrial Al-BSF silicon solar cells. In order to achieve the objectives of this thesis work, firstly, the appropriate Al paste was investigated for lowest back surface recombination velocity (BSRV), which gives high open circuit voltage (Voc). Secondly, the impact of emitter sheet resistance on solar cell performance was modeled to determine the optimal sheet resistance, and the uniformity of emitter was also investigated. Thirdly, modeling on the front metal electrodes was carried out to investigate the optimal number of busbars, and determine the optimum number of gridlines and gridline geometries that would result in low series resistance (Rs), high fill factor (FF) and hence high efficiency. Fourthly, the modeled results were experimentally validated through fine-line printing and optimized contact co-firing. By combining each layer to make

  6. Electroplated contacts and porous silicon for silicon based solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Kholostov, Konstantin, E-mail: kholostov@diet.uniroma1.it [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Serenelli, Luca; Izzi, Massimo; Tucci, Mario [Enea Casaccia Research Centre Rome, via Anguillarese 301, 00123 Rome (Italy); Balucani, Marco [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Rise Technology S.r.l., Lungomare Paolo Toscanelli 170, 00121 Rome (Italy)

    2015-04-15

    Highlights: • Uniformity of the Ni–Si interface is crucial for performance of Cu–Ni contacts on Si. • Uniformly filled PS is the key to obtain the best performance of Cu–Ni contacts on Si. • Optimization of anodization and electroplating allows complete filling of PS layer. • Highly adhesive and low contact resistance Cu–Ni contacts are obtained on Si. - Abstract: In this paper, a two-layer metallization for silicon based solar cells is presented. The metallization consists of thin nickel barrier and thick copper conductive layers, both obtained by electrodeposition technique suitable for phosphorus-doped 70–90 Ω/sq solar cell emitter formed on p-type silicon substrate. To ensure the adhesion between metal contact and emitter a very thin layer of mesoporous silicon is introduced on the emitter surface before metal deposition. This approach allows metal anchoring inside pores and improves silicon–nickel interface uniformity. Optimization of metal contact parameters is achieved varying the anodization and electrodeposition conditions. Characterization of contacts between metal and emitter is carried out by scanning electron microscopy, specific contact resistance and current–voltage measurements. Mechanical strength of nickel–copper contacts is evaluated by the peel test. Adhesion strength of more than 4.5 N/mm and contact resistance of 350 μΩ cm{sup 2} on 80 Ω/sq emitter are achieved.

  7. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

    Science.gov (United States)

    Yang, Weiquan; Becker, Jacob; Liu, Shi; Kuo, Ying-Shen; Li, Jing-Jing; Landini, Barbara; Campman, Ken; Zhang, Yong-Hang

    2014-05-01

    This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In0.49Ga0.51P/GaAs/In0.49Ga0.51P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs absorber, combined with a 5 μm thick Al0.52In0.48P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF2/ZnS anti-reflective coating demonstrated open-circuit voltages (Voc) up to 1.00 V, short-circuit current densities (Jsc) up to 24.5 mA/cm2, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated Jsc and conversion efficiency of these devices are expected to reach 26.6 mA/cm2 and 20.7%, respectively.

  8. Multi-Material Front Contact for 19% Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Joop van Deelen

    2016-02-01

    Full Text Available The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,GaSe2 (CIGS, CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.

  9. Design of Semiconductor-Based Back Reflectors for High Voc Monolithic Multijunction Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, I.; Geisz, J.; Steiner, M.; Olson, J.; Friedman, D.; Kurtz, S.

    2012-06-01

    State-of-the-art multijunction cell designs have the potential for significant improvement before going to higher number of junctions. For example, the Voc can be substantially increased if the photon recycling taking place in the junctions is enhanced. This has already been demonstrated (by Alta Devices) for a GaAs single-junction cell. For this, the loss of re-emitted photons by absorption in the underlying layers or substrate must be minimized. Selective back surface reflectors are needed for this purpose. In this work, different architectures of semiconductor distributed Bragg reflectors (DBR) are assessed as the appropriate choice for application in monolithic multijunction solar cells. Since the photon re-emission in the photon recycling process is spatially isotropic, the effect of the incident angle on the reflectance spectrum is of central importance. In addition, the DBR structure must be designed taking into account its integration into the monolithic multijunction solar cells, concerning series resistance, growth economics, and other issues. We analyze the tradeoffs in DBR design complexity with all these requirements to determine if such a reflector is suitable to improve multijunction solar cells.

  10. Structure and electrical properties of screen printed contacts on silicon solar cells

    Directory of Open Access Journals (Sweden)

    L.A. Dobrzański

    2011-04-01

    Full Text Available Purpose: The aim of the paper was to apply a conventional method - “screen printing” using micrometric pastes to improve the quality of forming front side metallization of monocrystalline solar cells.Design/methodology/approach: The topography of co-fired in the infrared belt furnace front contacts were investigated using confocal laser scanning microscope and scanning electron microscope with an energy dispersive X-ray (EDS spectrometer for microchemical analysis. There were researched both surface topography and cross section of front contacts using SEM microscope. Phase composition analyses of chosen front contacts were done using the XRD method. Front contacts were formed on the surface with different morphology of the solar cells: textured with coated antireflection layer, textured without coated antireflection layer, non-textured with coated antireflection layer, non-textured without coated antireflection layer. The medium size of the pyramids was measured using the atomic force microscope (AFM. Resistance of front electrodes was investigated using Transmission Line Model (TLM.Findings: The high of deposited front metallization has an influence on value obtained from the contact resistance. This high of silver contact depends on: a paste composition, obtained structure after fired into a infrared belt furnace, the quantity and type of creating connections material molecules between themselves and with a silicon substrate.Research limitations/implications: The contact resistance of the screen-printed front metallization depends not only on the paste composition and firing conditions, but is also strongly influenced by the surface morphology of the silicon substrate.Originality/value: This paper investigates the front contact formation using silver pastes about different composition on silicon solar cells in order to decrease contact resistance and increase efficiency in this way

  11. Investigation of Contact Formation during Silicon Solar Cell Production

    Science.gov (United States)

    Mojrová, Barbora

    2016-05-01

    This article deals with the investigation of the influence of sintering conditions on the formation process of screen printed contacts on passivated boron doped P+ emitters. The experiment was focused on measuring of resistance changes of two thick film pastes during firing processes with different conditions. Two different temperature profiles were compared at an atmospheric concentration of O2. The influence of the O2 concentration on resistance was investigated for one profile. A rapid thermal processing furnace modified for in-situ resistance measurements was used. The change of resistance was measured simultaneously with the temperature.

  12. Investigation of electronic and structural properties of silicon solar cell contacts

    OpenAIRE

    2012-01-01

    Screen-printing technique is used since 1970’s, but the understanding of screen printed contacts is quite poor. Several different models of contact formation exist. Two mechanisms of current transport from bulk semiconductor to bulk metal are proposed but not experimentally proved. Metal/semiconductor (Ag/Si) interface is the most important part of screen-printed contact and reduction of series resistance between the bulk Ag and the Si wafer has a large potential for solar cell performance im...

  13. The formation mechanism for printed silver-contacts for silicon solar cells

    Science.gov (United States)

    Fields, Jeremy D.; Ahmad, Md. Imteyaz; Pool, Vanessa L.; Yu, Jiafan; van Campen, Douglas G.; Parilla, Philip A.; Toney, Michael F.; van Hest, Maikel F. A. M.

    2016-04-01

    Screen-printing provides an economically attractive means for making Ag electrical contacts to Si solar cells, but the use of Ag substantiates a significant manufacturing cost, and the glass frit used in the paste to enable contact formation contains Pb. To achieve optimal electrical performance and to develop pastes with alternative, abundant and non-toxic materials, a better understanding the contact formation process during firing is required. Here, we use in situ X-ray diffraction during firing to reveal the reaction sequence. The findings suggest that between 500 and 650 °C PbO in the frit etches the SiNx antireflective-coating on the solar cell, exposing the Si surface. Then, above 650 °C, Ag+ dissolves into the molten glass frit - key for enabling deposition of metallic Ag on the emitter surface and precipitation of Ag nanocrystals within the glass. Ultimately, this work clarifies contact formation mechanisms and suggests approaches for development of inexpensive, nontoxic solar cell contacting pastes.

  14. The formation mechanism for printed silver-contacts for silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fields, Jeremy D.; Ahmad, Md. Imteyaz; Pool, Vanessa L.; Yu, Jiafan; Van Campen, Douglas G.; Parilla, Philip A.; Toney, Michael F.; van Hest, Maikel F. A. M.

    2016-04-01

    Screen-printing provides an economically attractive means for making Ag electrical contacts to Si solar cells, but the use of Ag substantiates a significant manufacturing cost, and the glass frit used in the paste to enable contact formation contains Pb. To achieve optimal electrical performance and to develop pastes with alternative, abundant, and non-toxic materials requires understanding the contact formation process during firing. Here, we use in-situ X-ray diffraction during firing to reveal the reaction sequence. The findings suggest that between 500 degrees C and 650 degrees C PbO in the frit etches the SiNx antireflective-coating on the solar cell, exposing the Si surface. Then, above 650 degrees C, Ag+ dissolves into the molten glass frit -- key for enabling deposition of metallic Ag on the emitter surface and precipitation of Ag nanocrystals within the glass. Ultimately, this work clarifies contact formation mechanisms and suggests approaches for development of inexpensive, nontoxic solar cell contacting pastes.

  15. Investigation of the screen printed contacts of silicon solar cells using Transmission Line Model

    Directory of Open Access Journals (Sweden)

    P. Panek

    2010-07-01

    Full Text Available Purpose: The aim of the paper is to analyze how to improve the quality of the screen printed contacts of silicon solar cells. This means forming front side grid in order to decrease contact resistance.Design/methodology/approach: The topography of screen printed contacts were investigated using ZEISS SUPRA 25 scanning electron microscope (SEM with an energy dispersive X-ray (EDS spectrometer for microchemical analysis. Front collection grid was created using two types of Ag pastes.The Transmission Line Model (TLM patterns were fabricated by screen printing method on p – type Czochralski silicon Cz-Si wafer with n+ emitter without texture and with a titanium oxide (TiOx layer as an antireflection coating (ARC. Electrical properties of contacts were investigated using TLM.Findings: This work presents a conventional analysis of a screen printing process for contact formation in the crystalline silicon solar cells. The seed layer was created using silver pasts by the screen printed metallization. These contact structures were investigated using SEM to gain a better understanding of the obtained electrical parameters.Research limitations/implications: The contact resistance of the screen-printed metallization depends not only on the kind of applied paste and firing conditions, but is also strongly influenced by the surface morphology of the silicon substrate.Practical implications: Contact formation is an important production step to be optimized in the development of high efficiency solar cells.Originality/value: The effect of co-firing different pasts (especially a past, which was prepared using silver nano-powder on electrical properties of silicon wafers.

  16. Numerical Study of TCO/Silicon Solar Cells with Novel Back Surface Field

    Science.gov (United States)

    Boumaour, M.; Sali, S.; Bahfir, A.; Kermadi, S.; Zougar, L.; Ouarab, N.; Larabi, A.

    2016-08-01

    ZnS/Si/CuO heterostructure is investigated by a theoretical approach as a possible low-cost design for photovoltaic conversion in the track of the heterojunction with intrinsic thin layer solar cells. Our results indicate that, owing to perfect electron affinity and lattice matching properties, zinc sulfide with adequate Al doping can efficiently replace zinc oxide window layer as an emitter region for silicon-based solar cells. Lattice mismatch, energy band alignment at the interfaces and material resistivity are the framework parameters of the study. By focusing on the open circuit voltage parameter, the back metal/Si and silicon base doping were optimized so that the conversion efficiency was increased from 3.37% to 15.19%. The introduction of a cupric oxide (CuO) layer acting as a p + back surface field with a bandgap of 1.35 eV and appropriate doping as high as 7 × 1018 cm-3 can enhance the conversion efficiency to 17.30%, provided that the silicon material remains free from contamination by copper atoms and also by performing a suitable treatment of CuO to lower its resistivity.

  17. Novel back-reflector architecture with nanoparticle based buried light-scattering microstructures for improved solar cell performance

    Science.gov (United States)

    Desta, Derese; Ram, Sanjay K.; Rizzoli, Rita; Bellettato, Michele; Summonte, Caterina; Jeppesen, Bjarke R.; Jensen, Pia B.; Tsao, Yao-Chung; Wiggers, Hartmut; Pereira, Rui N.; Balling, Peter; Larsen, Arne Nylandsted

    2016-06-01

    A new back-reflector architecture for light-management in thin-film solar cells is proposed that includes a morphologically smooth top surface with light-scattering microstructures buried within. The microstructures are pyramid shaped, fabricated on a planar reflector using TiO2 nanoparticles and subsequently covered with a layer of Si nanoparticles to obtain a flattened top surface, thus enabling growth of good quality thin-film solar cells. The optical properties of this back-reflector show high broadband haze parameter and wide angular distribution of diffuse light-scattering. The n-i-p amorphous silicon thin-film solar cells grown on such a back-reflector show enhanced light absorption resulting in improved external quantum efficiency. The benefit of the light trapping in those solar cells is evidenced by the gains in short-circuit current density and efficiency up to 15.6% and 19.3% respectively, compared to the reference flat solar cells. This improvement in the current generation in the solar cells grown on the flat-topped (buried pyramid) back-reflector is observed even when the irradiation takes place at large oblique angles of incidence. Finite-difference-time-domain simulation results of optical absorption and ideal short-circuit current density values agree well with the experimental findings. The proposed approach uses a low cost and simple fabrication technique and allows effective light manipulation by utilizing the optical properties of micro-scale structures and nanoscale constituent particles.

  18. Novel back-reflector architecture with nanoparticle based buried light-scattering microstructures for improved solar cell performance.

    Science.gov (United States)

    Desta, Derese; Ram, Sanjay K; Rizzoli, Rita; Bellettato, Michele; Summonte, Caterina; Jeppesen, Bjarke R; Jensen, Pia B; Tsao, Yao-Chung; Wiggers, Hartmut; Pereira, Rui N; Balling, Peter; Larsen, Arne Nylandsted

    2016-06-01

    A new back-reflector architecture for light-management in thin-film solar cells is proposed that includes a morphologically smooth top surface with light-scattering microstructures buried within. The microstructures are pyramid shaped, fabricated on a planar reflector using TiO2 nanoparticles and subsequently covered with a layer of Si nanoparticles to obtain a flattened top surface, thus enabling growth of good quality thin-film solar cells. The optical properties of this back-reflector show high broadband haze parameter and wide angular distribution of diffuse light-scattering. The n-i-p amorphous silicon thin-film solar cells grown on such a back-reflector show enhanced light absorption resulting in improved external quantum efficiency. The benefit of the light trapping in those solar cells is evidenced by the gains in short-circuit current density and efficiency up to 15.6% and 19.3% respectively, compared to the reference flat solar cells. This improvement in the current generation in the solar cells grown on the flat-topped (buried pyramid) back-reflector is observed even when the irradiation takes place at large oblique angles of incidence. Finite-difference-time-domain simulation results of optical absorption and ideal short-circuit current density values agree well with the experimental findings. The proposed approach uses a low cost and simple fabrication technique and allows effective light manipulation by utilizing the optical properties of micro-scale structures and nanoscale constituent particles. PMID:27244247

  19. Microstructure and mechanical properties of aluminum back contact layers

    Energy Technology Data Exchange (ETDEWEB)

    Popovich, V.A.; Janssen, M.; Richardson, I.M. [Delft University of Technology, Department of Materials Science and Engineering, Delft (Netherlands); Van Amstel, T.; Bennett, I.J. [ECN Solar Energy, Petten (Netherlands)

    2009-09-15

    The overall demand to reduce solar energy costs gives a continuous drive to reduce the thickness of silicon wafers. Handling and bowing problems associated with thinner wafers become more and more important, as these can lead to cells cracking and thus to high yield losses. In this paper the microstructure and mechanical properties of the aluminium on the rear side of a solar cell are discussed. It is shown that the aluminium back contact has a complex composite-like microstructure, consisting of five main components: (1) the back surface field layer; (2) a eutectic layer; (3) spherical (3 - 5 {mu}m) hypereutectic Al-Si particles surrounded by a thin aluminum oxide layer (200 nm); (4) a bismuth-silicate glass matrix; and (5) pores (14 vol.%). The Young's modulus of the Al-Si particles is estimated by nanoindentation and the overall Young's modulus is estimated on the basis of bowing measurements. These results are used as input parameters for an improved thermomechanical multiscale model of a silicon solar cell.

  20. Microstructure and mechanical properties of aluminum back contact layers

    Energy Technology Data Exchange (ETDEWEB)

    Popovich, V.A.; Janssen, M.; Richardson, I.M. [Delft University of Technology, Department of Materials Science and Engineering, Delft (Netherlands); van Amstel, T.; Bennett, I.J. [Energy Research Centre of the Netherlands, Solar Energy, PV Module Technology, Petten (Netherlands)

    2011-01-15

    The overall demand to reduce solar energy costs gives a continuous drive to reduce the thickness of silicon wafers. Handling and bowing problems associated with thinner wafers become more and more important, as these can lead to cells cracking and thus to high yield losses. In this paper the microstructure and mechanical properties of the aluminum on the rear side of a solar cell are discussed. It is shown that the aluminum back contact has a complex composite-like microstructure, consisting of five main components: (1) the back surface field layer; (2) a eutectic layer; (3) spherical (3-5 {mu}m) hypereutectic Al-Si particles surrounded by a thin aluminum oxide layer (200 nm); (4) a bismuth-silicate glass matrix; and (5) pores (14 vol%). The Young's modulus of the Al-Si particles is estimated by nanoindentation and the overall Young's modulus is estimated on the basis of bowing measurements. These results are used as input parameters for the improved thermomechanical multiscale model of a solar cell. (author)

  1. Numerical Analysis of Novel Back Surface Field for High Efficiency Ultrathin CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    M. A. Matin

    2013-01-01

    Full Text Available This paper numerically explores the possibility of high efficiency, ultrathin, and stable CdTe cells with different back surface field (BSF using well accepted simulator AMPS-1D (analysis of microelectronics and photonic structures. A modified structure of CdTe based PV cell SnO2/Zn2SnO4/CdS/CdTe/BSF/BC has been proposed over reference structure SnO2/Zn2SnO4/CdS/CdTe/Cu. Both higher bandgap materials like ZnTe and Cu2Te and low bandgap materials like As2Te3 and Sb2Te3 have been used as BSF to reduce minority carrier recombination loss at the back contact in ultra-thin CdTe cells. In this analysis the highest conversion efficiency of CdTe based PV cell without BSF has been found to be around 17% using CdTe absorber thickness of 5 μm. However, the proposed structures with different BSF have shown acceptable efficiencies with an ultra-thin CdTe absorber of only 0.6 μm. The proposed structure with As2Te3 BSF showed the highest conversion efficiency of 20.8% ( V,  mA/cm2, and . Moreover, the proposed structures have shown improved stability in most extents, as it was found that the cells have relatively lower negative temperature coefficient. However, the cell with ZnTe BSF has shown better overall stability than other proposed cells with temperature coefficient (TC of −0.3%/°C.

  2. Cloaking of solar cell contacts at the onset of Rayleigh scattering.

    Science.gov (United States)

    San Román, Etor; Vitrey, Alan; Buencuerpo, Jerónimo; Prieto, Iván; Llorens, José M; García-Martín, Antonio; Alén, Benito; Chaudhuri, Anabil; Neumann, Alexander; Brueck, S R J; Ripalda, José M

    2016-01-01

    Electrical contacts on the top surface of solar cells and light emitting diodes cause shadow losses. The phenomenon of extraordinary optical transmission through arrays of subwavelength holes suggests the possibility of engineering such contacts to reduce the shadow using plasmonics, but resonance effects occur only at specific wavelengths. Here we describe instead a broadband effect of enhanced light transmission through arrays of subwavelength metallic wires, due to the fact that, in the absence of resonances, metal wires asymptotically tend to invisibility in the small size limit regardless of the fraction of the device area taken up by the contacts. The effect occurs for wires more than an order of magnitude thicker than the transparency limit for metal thin films. Finite difference in time domain calculations predict that it is possible to have high cloaking efficiencies in a broadband wavelength range, and we experimentally demonstrate contact shadow losses less than half of the geometric shadow. PMID:27339390

  3. Cloaking of solar cell contacts at the onset of Rayleigh scattering

    Science.gov (United States)

    San Román, Etor; Vitrey, Alan; Buencuerpo, Jerónimo; Prieto, Iván; Llorens, José M.; García-Martín, Antonio; Alén, Benito; Chaudhuri, Anabil; Neumann, Alexander; Brueck, S. R. J.; Ripalda, José M.

    2016-01-01

    Electrical contacts on the top surface of solar cells and light emitting diodes cause shadow losses. The phenomenon of extraordinary optical transmission through arrays of subwavelength holes suggests the possibility of engineering such contacts to reduce the shadow using plasmonics, but resonance effects occur only at specific wavelengths. Here we describe instead a broadband effect of enhanced light transmission through arrays of subwavelength metallic wires, due to the fact that, in the absence of resonances, metal wires asymptotically tend to invisibility in the small size limit regardless of the fraction of the device area taken up by the contacts. The effect occurs for wires more than an order of magnitude thicker than the transparency limit for metal thin films. Finite difference in time domain calculations predict that it is possible to have high cloaking efficiencies in a broadband wavelength range, and we experimentally demonstrate contact shadow losses less than half of the geometric shadow. PMID:27339390

  4. Mercury telluride as an ohmic contact to efficient thin film cadmium telluride solar cells

    International Nuclear Information System (INIS)

    The formation of a stable, reproducible, low-resistance contact to p-CdTe thin films is a major problem in the fabrication of efficient solar cells. Two general approaches to this problem are: the formation of a region of high carrier concentration under the contact to reduce the contact resistance, and the use of contact materials with a higher work function than p-CdTe. The second approach is investigated in this work using p-HgTe as the contact material. The deposition of p-HgTe on p-CdTe was carried out by the direct combination of the elemental vapors in a gas flow system and by the close-spaced sublimation, (CSS) technique. The process parameters in the direct combination technique are more readily controlled than those in the CSS technique. The p-HgTe/p-CdTe contact resistance has been found to be very similar to the Au/p-CdTe contact resistance

  5. Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Colina, M., E-mail: monicacolinb@gmail.com; Morales-Vilches, A.; Voz, C.; Martín, I.; Ortega, P.; Orpella, A.; López, G.; Alcubilla, R.

    2015-05-01

    Highlights: • LIFT technique is investigated to improve heterojunction HJ solar cells. • Doped silicon films are adequate precursors for LIFT application in HJ cells. • LIFT leads to a reduction of the series resistance of a-Si HJ diodes. • LIFT allows the improvement of the front contact resistance in a-Si HJ solar cells. - Abstract: In this work the Laser Induced Forward Transfer (LIFT) technique is investigated to create n-doped regions on p-type c-Si substrates. The precursor source of LIFT consisted in a phosphorous-doped hydrogenated amorphous silicon layer grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) onto a transparent substrate. Transfer of the doping atoms occurs when a sequence of laser pulses impinging onto the doped layer propels the material toward the substrate. The laser irradiation not only transfers the doping material but also produces a local heating that promotes its diffusion into the substrate. The laser employed was a 1064 nm, lamp-pumped system, working at pulse durations of 100 and 400 ns. In order to obtain a good electrical performance a comprehensive optimization of the applied laser fluency and number of pulses was carried out. Subsequently, arrays of n + p local junctions were created by LIFT and the resulting J–V curves demonstrated the formation of good quality n+ regions. These structures were finally incorporated to enhance the front contact in conventional silicon heterojunction solar cells leading to an improvement of conversion efficiency.

  6. Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells

    International Nuclear Information System (INIS)

    Highlights: • LIFT technique is investigated to improve heterojunction HJ solar cells. • Doped silicon films are adequate precursors for LIFT application in HJ cells. • LIFT leads to a reduction of the series resistance of a-Si HJ diodes. • LIFT allows the improvement of the front contact resistance in a-Si HJ solar cells. - Abstract: In this work the Laser Induced Forward Transfer (LIFT) technique is investigated to create n-doped regions on p-type c-Si substrates. The precursor source of LIFT consisted in a phosphorous-doped hydrogenated amorphous silicon layer grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) onto a transparent substrate. Transfer of the doping atoms occurs when a sequence of laser pulses impinging onto the doped layer propels the material toward the substrate. The laser irradiation not only transfers the doping material but also produces a local heating that promotes its diffusion into the substrate. The laser employed was a 1064 nm, lamp-pumped system, working at pulse durations of 100 and 400 ns. In order to obtain a good electrical performance a comprehensive optimization of the applied laser fluency and number of pulses was carried out. Subsequently, arrays of n + p local junctions were created by LIFT and the resulting J–V curves demonstrated the formation of good quality n+ regions. These structures were finally incorporated to enhance the front contact in conventional silicon heterojunction solar cells leading to an improvement of conversion efficiency

  7. Passivation of the surface of rear contact solar cells by porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Nichiporuk, O. [Radiophysics Department, Taras Shevchenko National University, 64 Vladimirskaya, 01033, Kiev (Ukraine) and Laboratoire de Physique de la Matiere, UMR 5511, INSA de Lyon, Bat. Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France)]. E-mail: oleksiy.nichiporuk@insa-lyon.fr; Kaminski, A. [Laboratoire de Physique de la Matiere, UMR 5511, INSA de Lyon, Bat. Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Lemiti, M. [Laboratoire de Physique de la Matiere, UMR 5511, INSA de Lyon, Bat. Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Fave, A. [Laboratoire de Physique de la Matiere, UMR 5511, INSA de Lyon, Bat. Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Litvinenko, S. [Radiophysics Department, Taras Shevchenko National University, 64 Vladimirskaya, 01033, Kiev (Ukraine); Skryshevsky, V. [Radiophysics Department, Taras Shevchenko National University, 64 Vladimirskaya, 01033, Kiev (Ukraine)

    2006-07-26

    In this paper we analyse the passivation of the front surface of p-Si interdigitated rear contacts solar cell (IBC) by a thin porous silicon (PS) layer. Effectively, an efficiency improvement of 87% in relative was observed after porous silicon layer formation on the front surface of the IBC cell. The origin of surface passivation by the PS layer was studied by Laser Beam Induced Current (LBIC) method. The front surface of rear contacts cell with thin porous silicon layer was scanned by a modulated red laser beam in presence of a permanent light with different wavelengths and intensities. It was shown that without permanent illumination, the photocurrent of the cell with PS layer is very low, even lower than for a cell with unpassivated surface. However with short permanent wavelength illumination a strong increase of photocurrent was observed (8-10 times{exclamation_point}). The light-dependent porous silicon passivation phenomenon is explained by a significant negative charge accumulation at the PS/p-Si interface traps under illumination. This leads to the formation of a hi-low (p{sup +}/p) junction at the front surface of the cell and to the reduction of the front surface recombination rate, like in Front Surface Field Solar Cell.

  8. Results of 1 MeV proton irradiation of front and back surfaces of silicon solar cells

    Science.gov (United States)

    Anspaugh, B. E.; Kachare, R.; Weizer, V. G.

    1987-01-01

    Several silicon solar cells with and without back surface fields (BSF), having thicknesses of 200 microns and 63 microns were irradiated with 1 MeV protons having fluences between 1 times 10 to the 10th power and 1 times 10 to the 12th power p/square cm. The irradiation was performed using both normal and isotropic incidence on the front as well as back surfaces of the solar cells. The results of the back surface irradiations are analyzed using a model in which irradiation induced defects across the high-low (BSF) junction are considered. It is concluded that degradation of the high-low junction is responsible for the severe performance loss in thinner cells when irradiated from the rear.

  9. Design and optimization of ultrathin crystalline silicon solar cells using an efficient back reflector

    Directory of Open Access Journals (Sweden)

    S. Saravanan

    2015-05-01

    Full Text Available Thin film solar cells are cheaper but having low absorption in longer wavelength and hence, an effective light trapping mechanism is essential. In this work, we proposed an ultrathin crystalline silicon solar cell which showed extraordinary performance due to enhanced light absorption in visible and infrared part of solar spectrum. Various designing parameters such as number of distributed Bragg reflector (DBR pairs, anti-reflection layer thickness, grating thickness, active layer thickness, grating duty cycle and period were optimized for the optimal performance of solar cell. An ultrathin silicon solar cell with 40 nm active layer could produce an enhancement in cell efficiency ∼15 % and current density ∼23 mA/cm2. This design approach would be useful for the realization of new generation of solar cells with reduced active layer thickness.

  10. Effect of Back Contact and Rapid Thermal Processing Conditions on Flexible CdTe Device Performance

    Energy Technology Data Exchange (ETDEWEB)

    Mahabaduge, Hasitha; Meysing, D. M.; Rance, Will L.; Burst, James M.; Reese, Matthew O.; Wolden, C. A.; Gessert, Timothy A.; Metzger, Wyatt K.; Garner, S.; Barnes, Teresa M.

    2015-06-14

    Flexible CdTe solar cells on ultra-thin glass substrates can enable new applications that require high specific power, unique form-factors, and low manufacturing costs. To be successful, these cells must be cost competitive, have high efficiency, and have high reliability. Here we present back contact processing conditions that enabled us to achieve over 16% efficiency on flexible Corning (R) Willow (R) Glass substrates. We used co-evaporated ZnTe:Cu and Au as our back contact and used rapid thermal processing (RTP) to activate the back contact. Both the ZnTe to Cu ratio and the RTP activation temperature provide independent control over the device performance. We have investigated the influence of various RTP conditions to Cu activation and distribution. Current density-voltage, capacitance-voltage measurements along with device simulations were used to examine the device performance in terms of ZnTe to Cu ratio and rapid thermal activation temperature.

  11. Efficient Regular Perovskite Solar Cells Based on Pristine [70]Fullerene as Electron-Selective Contact.

    Science.gov (United States)

    Collavini, Silvia; Kosta, Ivet; Völker, Sebastian F; Cabanero, German; Grande, Hans J; Tena-Zaera, Ramón; Delgado, Juan Luis

    2016-06-01

    [70]Fullerene is presented as an efficient alternative electron-selective contact (ESC) for regular-architecture perovskite solar cells (PSCs). A smart and simple, well-described solution processing protocol for the preparation of [70]- and [60]fullerene-based solar cells, namely the fullerene saturation approach (FSA), allowed us to obtain similar power conversion efficiencies for both fullerene materials (i.e., 10.4 and 11.4 % for [70]- and [60]fullerene-based devices, respectively). Importantly, despite the low electron mobility and significant visible-light absorption of [70]fullerene, the presented protocol allows the employment of [70]fullerene as an efficient ESC. The [70]fullerene film thickness and its solubility in the perovskite processing solutions are crucial parameters, which can be controlled by the use of this simple solution processing protocol. The damage to the [70]fullerene film through dissolution during the perovskite deposition is avoided through the saturation of the perovskite processing solution with [70]fullerene. Additionally, this fullerene-saturation strategy improves the performance of the perovskite film significantly and enhances the power conversion efficiency of solar cells based on different ESCs (i.e., [60]fullerene, [70]fullerene, and TiO2 ). Therefore, this universal solution processing protocol widens the opportunities for the further development of PSCs. PMID:26991031

  12. Plasmonic effects in ultrathin amorphous silicon solar cells: performance improvements with Ag nanoparticles on the front, the back, and both.

    Science.gov (United States)

    Winans, Joshua D; Hungerford, Chanse; Shome, Krishanu; Rothberg, Lewis J; Fauchet, Philippe M

    2015-02-01

    Thin-film hydrogenated amorphous silicon (a-Si:H) solar cells that are free-standing over a 2x2 mm area have been fabricated with thicknesses of 150 nm, 100 nm, and 60 nm. Silver nanoparticles (NPs) created on the front and/or back surfaces of the solar cells led to improvement in performance measures such as current density, overall efficiency, and external quantum efficiency. The effect of changing silver nanoparticle size and incident light angle was tested. Finite-Difference Time-Domain simulations are presented as a way to understand the experimental results as well as guide future research efforts. PMID:25836257

  13. p+-doping analysis of laser fired contacts for silicon solar cells by Kelvin probe force microscopy

    Science.gov (United States)

    Ebser, J.; Sommer, D.; Fritz, S.; Schiele, Y.; Hahn, G.; Terheiden, B.

    2016-03-01

    Local rear contacts for silicon passivated emitter and rear contact solar cells can be established by point-wise treating an Al layer with laser radiation and thereby establishing an electrical contact between Al and Si bulk through the dielectric passivation layer. In this laser fired contacts (LFC) process, Al can establish a few μm thick p+-doped Si region below the metal/Si interface and forms in this way a local back surface field which reduces carrier recombination at the contacts. In this work, the applicability of Kelvin probe force microscopy (KPFM) to the investigation of LFCs considering the p+-doping distribution is demonstrated. The method is based on atomic force microscopy and enables the evaluation of the lateral 2D Fermi-level characteristics at sub-micrometer resolution. The distribution of the electrical potential and therefore the local hole concentration in and around the laser fired region can be measured. KPFM is performed on mechanically polished cross-sections of p+-doped Si regions formed by the LFC process. The sample preparation is of great importance because the KPFM signal is very surface sensitive. Furthermore, the measurement is responsive to sample illumination and the height of the applied voltage between tip and sample. With other measurement techniques like micro-Raman spectroscopy, electrochemical capacitance-voltage, and energy dispersive X-ray analysis, a high local hole concentration in the range of 1019 cm-3 is demonstrated in the laser fired region. This provides, in combination with the high spatial resolution of the doping distribution measured by KPFM, a promising approach for microscopic understanding and further optimization of the LFC process.

  14. Large area, low cost space solar cells with optional wraparound contacts

    Science.gov (United States)

    Michaels, D.; Mendoza, N.; Williams, R.

    1981-01-01

    Design parameters for two large area, low cost solar cells are presented, and electron irradiation testing, thermal alpha testing, and cell processing are discussed. The devices are a 2 ohm-cm base resistivity silicon cell with an evaporated aluminum reflector produced in a dielectric wraparound cell, and a 10 ohm-cm silicon cell with the BSF/BSR combination and a conventional contact system. Both cells are 5.9 x 5.9 cm and require 200 micron thick silicon material due to mission weight constraints. Normalized values for open circuit voltage, short circuit current, and maximum power calculations derived from electron radiation testing are given. In addition, thermal alpha testing values of absorptivity and emittance are included. A pilot cell processing run produced cells averaging 14.4% efficiencies at AMO 28 C. Manufacturing for such cells will be on a mechanized process line, and the area of coverslide application technology must be considered in order to achieve cost effective production.

  15. Combinatorial Sputtering of Ga-Doped (Zn,Mg)O for Contact Applications in Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Rajbhandari, Pravakar P.; Bikowski, Andre; Perkins, John D.; Dhakal, Tara P.; Zakutayev, Andriy

    2017-01-01

    Development of tunable contact materials based on environmentally friendly chemical elements using scalable deposition approaches is necessary for existing and emerging solar energy conversion technologies. In this paper, the properties of ZnO alloyed with magnesium (Mg), and doped with gallium (Ga) are studied using combinatorial thin film experiments. As a result of these studies, the optical band gap of the sputtered Zn1-xMgxO thin films was determined to vary from 3.3 to 3.6 eV for a compositional spread of Mg content in the 0.04 < x < 0.17 range. Depending on whether or not Ga dopants were added, the electron concentrations were on the order of 1017 cm-3 or 1020 cm-3, respectively. Based on these results and on the Kelvin Probe work function measurements, a band diagram was derived using basic semiconductor physics equations. The quantitative determination of how the energy levels of Ga-doped (Zn, Mg)O thin films change as a function of Mg composition presented here, will facilitate their use as optimized contact layers for both Cu2ZnSnS4 (CZTS), Cu(In, Ga)Se2 (CIGS) and other solar cell absorbers.

  16. Increased cell efficiency in InGaAs thin film solar cells with dielectric and metal back reflectors

    OpenAIRE

    Aydin, Koray; Leite, Marina S.; Atwater, Harry A.

    2010-01-01

    Compound single junction and multijunction solar cells enable very high photovoltaic efficiencies by virtue of employing different band gap materials in seriesconnected tandem cells to access the full solar spectrum. Researchers focused on improving the electrical properties of solar cells by optimizing the material growth conditions, however relatively little work to date has been devoted to light trapping and enhanced absorption in III-V compound solar cells using ba...

  17. Effects of contact electrode size on the characteristics of polycrystalline-Si p-i-n solar cells

    Institute of Scientific and Technical Information of China (English)

    M. H. Juang; H. Y. Huang; S. L. Jang

    2011-01-01

    The effects of contact electrode size on the photo-voltaic characteristics of polycrystalline-Si p-i-n solar cells have been studied,with respect to a unit-cell pitch size of 1 μm width.For the non-transparent A1 contact electrode with a contact width of 0.05-0.2 μm,the short-circuit current is obviously reduced with increasing contact width,due to a larger area of optical reflection by the electrode.On the other hand,even when using a transparent ITO (indium-tin-oxide) electrode,a larger width of contact electrode may also cause a smaller short-circuit current,due to a larger area of optical absorption by the electrode.However,for this ITO electrode,the contact electrode of 0.05 μm width causes a smaller short-circuit current than that of 0.1 μm width,primarily ascribed to a smaller area for collecting carrier and a larger contact resistance.As a result,while using the ITO contact electrode to enhance the conversion efficiency of the solar cell,a proper width of contact electrode should be employed to optimize the photo-voltaic characteristics.

  18. Stabilizing CdTe/CdS solar cells with Cu-containing contacts to p-CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Dobson, K.D.; Visoly-Fisher, I.; Hodes, G.; Cahen, D. [Weizmann Inst. of Science, Rehovoth (Israel)

    2001-10-02

    High efficiency CdTe/CdS thin-film solar cells require low resistance contacts to p-CdTe, which is frequently achieved by addition of Cu. Decreases in cell efficiency over time, however, have been associated with Cu from the contact. The question that is considered here is if Cu is really detrimental to cell performance? By performing a series of thermal stress tests the authors reach a far more optimistic conclusion than what has hitherto been assumed.f (orig.)

  19. Application Of Artificial Neural Networks In Modeling Of Manufactured Front Metallization Contact Resistance For Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Musztyfaga-Staszuk M.

    2015-09-01

    Full Text Available This paper presents the application of artificial neural networks for prediction contact resistance of front metallization for silicon solar cells. The influence of the obtained front electrode features on electrical properties of solar cells was estimated. The front electrode of photovoltaic cells was deposited using screen printing (SP method and next to manufactured by two methods: convectional (1. co-fired in an infrared belt furnace and unconventional (2. Selective Laser Sintering. Resistance of front electrodes solar cells was investigated using Transmission Line Model (TLM. Artificial neural networks were obtained with the use of Statistica Neural Network by Statsoft. Created artificial neural networks makes possible the easy modelling of contact resistance of manufactured front metallization and allows the better selection of production parameters. The following technological recommendations for the screen printing connected with co-firing and selective laser sintering technology such as optimal paste composition, morphology of the silicon substrate, co-firing temperature and the power and scanning speed of the laser beam to manufacture the front electrode of silicon solar cells were experimentally selected in order to obtain uniformly melted structure well adhered to substrate, of a small front electrode substrate joint resistance value. The prediction possibility of contact resistance of manufactured front metallization is valuable for manufacturers and constructors. It allows preserving the customers’ quality requirements and bringing also measurable financial advantages.

  20. Optimal enhancement in conversion efficiency of crystalline Si solar cells using inverse opal photonic crystals as back reflectors

    International Nuclear Information System (INIS)

    The effect of using inverse opal photonic crystals as back reflectors on the power conversion efficiency of c-Si solar cells is investigated. The reflection spectra of inverse opal photonic crystals with different diameters of air spheres are simulated using the finite difference time domain (FDTD) method. The reflection peaks are correlated with photonic band gaps present in the photonic band gap diagram. Significant improvement in the optical absorption of the crystalline silicon layer is recorded when inverse opal photonic crystals are considered. Physical mechanisms which may contribute to the enhancement of the light absorption are underlined. With higher short-circuit current enhancement possible, and with no corresponding degradation in open-circuit voltage Voc or the fill factor, the power conversion efficiency is increased significantly when inverse opal photonic crystals are used as back reflectors with optimized diameter of air spheres. (paper)

  1. Modeling light trapping in nanostructured solar cells.

    Science.gov (United States)

    Ferry, Vivian E; Polman, Albert; Atwater, Harry A

    2011-12-27

    The integration of nanophotonic and plasmonic structures with solar cells offers the ability to control and confine light in nanoscale dimensions. These nanostructures can be used to couple incident sunlight into both localized and guided modes, enhancing absorption while reducing the quantity of material. Here we use electromagnetic modeling to study the resonances in a solar cell containing both plasmonic metal back contacts and nanostructured semiconductor top contacts, identify the local and guided modes contributing to enhanced absorption, and optimize the design. We then study the role of the different interfaces and show that Al is a viable plasmonic back contact material.

  2. Resonant tunneling diodes as energy-selective contacts used in hot-carrier solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Takeda, Yasuhiko, E-mail: takeda@mosk.tytlabs.co.jp; Sugimoto, Noriaki [Toyota Central Research and Development Laboratories, Inc., 41-1, Yokomichi, Nagakute, Aichi 480-1192 (Japan); Ichiki, Akihisa [Green Mobility Collaborative Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Kusano, Yuya [Green Mobility Collaborative Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Toyota Motor Corp., 1200 Mishuku, Susono, Shizuoka 410-1193 (Japan); Motohiro, Tomoyoshi [Toyota Central Research and Development Laboratories, Inc., 41-1, Yokomichi, Nagakute, Aichi 480-1192 (Japan); Green Mobility Collaborative Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan)

    2015-09-28

    Among the four features unique to hot-carrier solar cells (HC-SCs): (i) carrier thermalization time and (ii) carrier equilibration time in the absorber, (iii) energy-selection width and (iv) conductance of the energy-selective contacts (ESCs), requisites of (i)-(iii) for high conversion efficiency have been clarified. We have tackled the remaining issues related to (iv) in the present study. The detailed balance model of HC-SC operation has been improved to involve a finite value of the ESC conductance to find the required values, which in turn has been revealed to be feasible using resonant tunneling diodes (RTDs) consisting of semiconductor quantum dots (QDs) and quantum wells (QWs) by means of a formulation to calculate the conductance of the QD- and QW-RTDs derived using the rigorous solutions of the effective-mass Hamiltonians. Thus, all of the four requisites unique to HC-SCs to achieve high conversion efficiency have been elucidated, and the two requisites related to the ESCs can be fulfilled using the QD- and QW-RTDs.

  3. Al and Cu Implantation into Silicon Substrate for Ohmic Contact in Solar Cell Fabrication

    International Nuclear Information System (INIS)

    Research on the implantation of Al and Cu ions into silicon substrate for ohmic contact in solar cell fabrication has been carried using ion accelerator machine. Al and Cu ions are from 98% Al and 99.9% Cu powder ionized in ion source system. provided in ion implantor machine. Before implantation process, (0.5 x 1) cm2 N type and P type silicon were washed in water and then etched in Cp-4A solution. After that, P type silicon were implanted with Al ions and N type silicon were implanted with Cu ions with the ions dose from 1013 ion/cm2 - 1016 ion/cm2 and energy 20 keV - 80 keV. Implanted samples were then annealed at temperature 400 oC - 850 oC. Implanted and annealed samples were characterized their resistivities using four point probe FPP-5000. It was found that at full electrically active conditions the ρs for N type was 1.30 x 108 Ω/sq, this was achieved at ion dose 1013 ion/cm2 and annealing temperature 500 oC. While for P type, the ρs was 1.13 x 102 Ω/sq, this was achieved at ion dose 1013 ion/cm2 and energy 40 keV, and annealing temperature 500 oC. (author)

  4. Resonant tunneling diodes as energy-selective contacts used in hot-carrier solar cells

    Science.gov (United States)

    Takeda, Yasuhiko; Ichiki, Akihisa; Kusano, Yuya; Sugimoto, Noriaki; Motohiro, Tomoyoshi

    2015-09-01

    Among the four features unique to hot-carrier solar cells (HC-SCs): (i) carrier thermalization time and (ii) carrier equilibration time in the absorber, (iii) energy-selection width and (iv) conductance of the energy-selective contacts (ESCs), requisites of (i)-(iii) for high conversion efficiency have been clarified. We have tackled the remaining issues related to (iv) in the present study. The detailed balance model of HC-SC operation has been improved to involve a finite value of the ESC conductance to find the required values, which in turn has been revealed to be feasible using resonant tunneling diodes (RTDs) consisting of semiconductor quantum dots (QDs) and quantum wells (QWs) by means of a formulation to calculate the conductance of the QD- and QW-RTDs derived using the rigorous solutions of the effective-mass Hamiltonians. Thus, all of the four requisites unique to HC-SCs to achieve high conversion efficiency have been elucidated, and the two requisites related to the ESCs can be fulfilled using the QD- and QW-RTDs.

  5. Resonant tunneling diodes as energy-selective contacts used in hot-carrier solar cells

    International Nuclear Information System (INIS)

    Among the four features unique to hot-carrier solar cells (HC-SCs): (i) carrier thermalization time and (ii) carrier equilibration time in the absorber, (iii) energy-selection width and (iv) conductance of the energy-selective contacts (ESCs), requisites of (i)-(iii) for high conversion efficiency have been clarified. We have tackled the remaining issues related to (iv) in the present study. The detailed balance model of HC-SC operation has been improved to involve a finite value of the ESC conductance to find the required values, which in turn has been revealed to be feasible using resonant tunneling diodes (RTDs) consisting of semiconductor quantum dots (QDs) and quantum wells (QWs) by means of a formulation to calculate the conductance of the QD- and QW-RTDs derived using the rigorous solutions of the effective-mass Hamiltonians. Thus, all of the four requisites unique to HC-SCs to achieve high conversion efficiency have been elucidated, and the two requisites related to the ESCs can be fulfilled using the QD- and QW-RTDs

  6. Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells

    Science.gov (United States)

    Colina, M.; Morales-Vilches, A.; Voz, C.; Martín, I.; Ortega, P.; Orpella, A.; López, G.; Alcubilla, R.

    2015-05-01

    In this work the Laser Induced Forward Transfer (LIFT) technique is investigated to create n-doped regions on p-type c-Si substrates. The precursor source of LIFT consisted in a phosphorous-doped hydrogenated amorphous silicon layer grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) onto a transparent substrate. Transfer of the doping atoms occurs when a sequence of laser pulses impinging onto the doped layer propels the material toward the substrate. The laser irradiation not only transfers the doping material but also produces a local heating that promotes its diffusion into the substrate. The laser employed was a 1064 nm, lamp-pumped system, working at pulse durations of 100 and 400 ns. In order to obtain a good electrical performance a comprehensive optimization of the applied laser fluency and number of pulses was carried out. Subsequently, arrays of n + p local junctions were created by LIFT and the resulting J-V curves demonstrated the formation of good quality n+ regions. These structures were finally incorporated to enhance the front contact in conventional silicon heterojunction solar cells leading to an improvement of conversion efficiency.

  7. Numerical Analysis of Novel Back Surface Field for High Efficiency Ultrathin CdTe Solar Cells

    OpenAIRE

    M. A. Matin; Tomal, M. U.; Robin, A. M.; Amin, N.

    2013-01-01

    This paper numerically explores the possibility of high efficiency, ultrathin, and stable CdTe cells with different back surface field (BSF) using well accepted simulator AMPS-1D (analysis of microelectronics and photonic structures). A modified structure of CdTe based PV cell SnO2/Zn2SnO4/CdS/CdTe/BSF/BC has been proposed over reference structure SnO2/Zn2SnO4/CdS/CdTe/Cu. Both higher bandgap materials like ZnTe and Cu2Te and low bandgap materials like As2Te3 and Sb2Te3 have been used as BSF ...

  8. Microstructural characterization and current conduction mechanisms of front-side contact of n-type crystalline Si solar cells with Ag/Al pastes

    Science.gov (United States)

    Liang, L.; Li, Z. G.; Cheng, L. K.; Takeda, N.; Carroll, A. F.

    2015-06-01

    Recently, high efficiency n-type crystalline Si cells made with the screen printed Ag/Al metallization have received considerable attention. We report here our microstructural investigations of the critical interfacial region between the front-side contact and the Si wafer of n-type cells fired under progressively higher temperatures. Our study revealed that the key characteristic microstructures of the interfacial region changed from one with a large fraction of residual SiNx, to one consisting of a thin glass layer with nano-Ag colloids, and finally to one decorated with Ag and Ag/Al crystallites attached to the emitter surface for cells with under-, optimally-, and over-fired conditions, respectively. We did not find any Al-Si eutectic layer on the emitter surface that would support a silicon dissolution and re-growth mechanism, which is operative in the back surface field formation process for the Al back contact of p-type industrial solar cells. The presence of the SiNx antireflection coating has likely altered the chemistry between Si and Al significantly. The observed microstructures lead us to conclude that the main current conduction mechanism in optimally-fired n-type cells is tunneling through those areas of thin interfacial glass containing nano-Ag colloids. This mechanism is similar to the current conduction model we have proposed previously for optimally-fired p-type crystalline Si solar cells. We believe that the intrusion of Ag/Al (and/or Ag) crystallites into the p+-Si emitter in over-fired cells is one of the major sources of metallization-induced recombination losses, which degrades cell performance.

  9. Design of anti-ring back reflectors for thin-film solar cells based on three-dimensional optical and electrical modeling

    Energy Technology Data Exchange (ETDEWEB)

    Hsiao, Hui-Hsin; Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan (China); Chang, Hung-Chun [Graduate Institute of Photonics and Optoelectronics, Graduate Institute of Communication Engineering, and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan (China)

    2014-08-11

    The optical and electrical properties of a photonic-plasmonic nanostructure on the back contact of thin-film solar cells were investigated numerically through the three-dimensional (3D) finite-difference time-domain method and the 3D Poisson and drift-diffusion solver. The focusing effect and the Fabry-Perot resonances are identified as the main mechanisms for the enhancement of the optical generation rate as well as the short circuit current density. However, the surface topography of certain nanopattern structures is found to reduce the internal electrostatic field of the device, thus limiting charge collection. The optimized conditions for both optics and electronics have been analyzed in this paper.

  10. Measuring The Contact Resistances Of Photovoltaic Cells

    Science.gov (United States)

    Burger, D. R.

    1985-01-01

    Simple method devised to measure contact resistances of photovoltaic solar cells. Method uses readily available equipment and applicable at any time during life of cell. Enables evaluation of cell contact resistance, contact-end resistance, contact resistivity, sheet resistivity, and sheet resistivity under contact.

  11. Influence of the ARC patterning method and annealing on the contact adhesion of Ni/Cu-plated solar cells

    Science.gov (United States)

    Baik, Jong Wook; Lee, Sang Hee; Lee, Doo Won; Lee, Soo Hong

    2016-05-01

    Ni/Cu two-step plating is a promising metallization technique because low contact resistance and improved contact adhesion can be achieved after the Ni annealing process. Also, narrow fingers, which are required for high-efficiency solar cells, can be formed by plating. However, the reliability of contact adhesion is still considered one obstacle to industrializing solar cells with plated metal contacts. In this experiment, the influence of ARC opening methods on plated contact adhesion was investigated because the roughnesses of the Si surfaces produced by using pico-second laser ablation and photolithography may be different. Also, the annealing process was conducted before and after plating Cu/Ag metal stacks. The sequence of the annealing can be significant for efficient production because plating is a wet process while annealing is a dry process. The contact adhesion was measured by using a peel-off test. The test was conducted on a 1.5-mm-wide by a 60 ~ 70- mm-long bus bar area. A 3.2-N/mm adhesion force was recorded as a highest average value along the bus bar.

  12. Optimal design of one-dimensional photonic crystal back reflectors for thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Peizhuan; Hou, Guofu, E-mail: gfhou@nankai.edu.cn; Zhang, Jianjun, E-mail: jjzhang@nankai.edu.cn; Zhang, Xiaodan; Zhao, Ying [Institute of Photoelectronics and Tianjin Key Laboratory of Photoelectronic Thin-film Devices and Technique, Nankai University, Tianjin 300071 (China)

    2014-08-14

    For thin-film silicon solar cells (TFSC), a one-dimensional photonic crystal (1D PC) is a good back reflector (BR) because it increases the total internal reflection at the back surface. We used the plane-wave expansion method and the finite difference time domain (FDTD) algorithm to simulate and analyze the photonic bandgap (PBG), the reflection and the absorption properties of a 1D PC and to further explore the optimal 1D PC design for use in hydrogenated amorphous silicon (a-Si:H) solar cells. With identified refractive index contrast and period thickness, we found that the PBG and the reflection of a 1D PC are strongly influenced by the contrast in bilayer thickness. Additionally, light coupled to the top three periods of the 1D PC and was absorbed if one of the bilayers was absorptive. By decreasing the thickness contrast of the absorptive layer relative to the non-absorptive layer, an average reflectivity of 96.7% was achieved for a 1D PC alternatively stacked with a-Si:H and SiO{sub 2} in five periods. This reflectivity was superior to a distributed Bragg reflector (DBR) structure with 93.5% and an Ag film with 93.4%. n-i-p a-Si:H solar cells with an optimal 1D PC-based BR offer a higher short-circuit current density than those with a DBR-based BR or an AZO/Ag-based BR. These results provide new design rules for photonic structures in TFSC.

  13. Simulation analysis of the effects of a back surface field on a p-a-Si:H/n-c-Si/n+-a-Si:H heterojunction solar cell

    Institute of Scientific and Technical Information of China (English)

    Hu Yuehui; Zhang Xiangwen; Qu Minghao; Wang Lifu; Zeng Tao; Xie Yaojiang

    2009-01-01

    In order to investigate the effects of a back surface field (BSF) on the performance of a p-doped amorphous silicon (p-a-Si:H)/n-doped crystalline silicon (n-c-Si) solar cell, a heterojunction solar cell with a p-a-Si:H/nc-Si/n+-a-Si:H structure was designed. An n+-a-Si:H film was deposited on the back of an n-c-Si wafer as the BSF.The photovoltaic performance of p-a-Si:H/n-c-Si/n+-a-Si:H solar cells were simulated. It was shown that the BSF of the p-a-Si:H/n-c-Si/n+-a-Si:H solar cells could effectively inhibit the decrease of the cell performance caused by interface states.

  14. Enhancement of photovoltaic properties of multicrystalline silicon solar cells by combination of buried metallic contacts and thin porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ben Rabha, M.; Bessais, B. [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2010-03-15

    Photovoltaic properties of buried metallic contacts (BMCs) with and without application of a front porous silicon (PS) layer on multicrystalline silicon (mc-Si) solar cells were investigated. A Chemical Vapor Etching (CVE) method was used to perform front PS layer and BMCs of mc-Si solar cells. Good electrical performance for the mc-Si solar cells was observed after combination of BMCs and thin PS films. As a result the current-voltage (I-V) characteristics and the internal quantum efficiency (IQE) were improved, and the effective minority carrier diffusion length (Ln) increases from 75 to 110 {mu}m after BMCs achievement. The reflectivity was reduced to 8% in the 450-950 nm wavelength range. This simple and low cost technology induces a 12% conversion efficiency (surface area = 3.2 cm{sup 2}). The obtained results indicate that the BMCs improve charge carrier collection while the PS layer passivates the front surface. (author)

  15. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    Energy Technology Data Exchange (ETDEWEB)

    Pathirane, M., E-mail: minoli.pathirane@uwaterloo.ca; Iheanacho, B.; Lee, C.-H.; Wong, W. S. [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Tamang, A.; Knipp, D. [Research Center for Functional Materials and Nanomolecular Science, Jacobs University Bremen, Bremen 28759 (Germany); Lujan, R. [Electronic Materials and Devices Laboratory, Palo Alto Research Center, Palo Alto, California 93003 (United States)

    2015-10-05

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  16. A Novel High-Efficiency Rear-Contact Solar Cell with Bifacial Sensitivity

    Science.gov (United States)

    Hezel, R.

    At present, wafer-based silicon solar cells have a share of more than 90% of the photovoltaic market. Despite rapid growth in the manufacturing volume, accompanied by a significant drop in the module selling price, the high costs currently associated with photovoltaic power generation are one of the most important obstacles to widespread global use of solar electricity. Up to a certain level, a higher production volume is a key driver in cost reduction. However, apart from a drastic reduction of the silicon wafer thickness in conjunction with improved light-trapping schemes, innovative processing sequences combining very high solar cell efficiencies with simple and cost-effective fabrication techniques are needed to become competitive with conventional energy sources and thus to move solar energy from niche to mainstream.

  17. Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS

    OpenAIRE

    Kumar, Atul; Thakur, Ajay D.

    2015-01-01

    A Copper-Zinc-Tin-Sulphide (CZTS)based solar cell with a modified ce3ll configuration of Mo/SnS/CZTS/SnS2/ZnO is simulated using SCAPS. An SnS2 buffer layer is used in simulation instead of the standard CdS layer. An additional back surface passivation layer of SnS is added in the modified cell configuration. An improvement in the solar cell efficiency compared to the standard CdS buffer based solar cell configuration Mo/CZTS/CdS/ZnO is found. The observations suggest the possibility of using...

  18. Comparison of Fast Roll-to-Roll Flexographic, Inkjet, Flatbed, and Rotary Screen Printing of Metal Back Electrodes for Polymer Solar Cells

    DEFF Research Database (Denmark)

    Hösel, Markus; Søndergaard, Roar R.; Angmo, Dechan;

    2013-01-01

    The majority of polymer solar cells reported today employs processing under high vacuum for one or more of the layers in the solar cell stack. Most notably the highly conducting metal back electrode is almost exclusively applied by evaporation of the pure metal. While it is not impossible...... technique is most suited for manufacture of polymer solar cell modules in terms of technical yield, materials use and processing speed? Evidently the back electrode has to be of high conductivity, which implies the use of a thick electrode. Therefore thick film printing techniques such as the screen...... to envisage mass production of polymer solar cells using vacuum processing it does present some drawbacks in terms of both processing speed, capital investment in processing equipment technical yield and direct process energy. From this point of view it is clear that vacuum processed electrodes should...

  19. The investigation of ZnO:Al2O3/metal composite back reflectors in amorphous silicon germanium thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    Wang Guang-Hong; Zhao Lei; Yan Bao-Jun; Chen Jing-Wei; Wang Ge; Diao Hong-Wei; Wang Wen-Jing

    2013-01-01

    Different aluminum-doped ZnO (AZO)/metal composite thin films,including AZO/Ag/Al,AZO/Ag/nickelchromium alloy (NiCr),and AZO/Ag/NiCr/Al,are utilized as the back reflectors of p-i-n amorphous silicon germanium thin film solar cells.NiCr is used as diffusion barrier layer between Ag and Al to prevent mutual diffusion,which increases the short circuit current density of solar cell.NiCr and NiCr/Al layers are used as protective layers of Ag layer against oxidation and sulfurization,the higher efficiency of solar cell is achieved.The experimental results show that the performance of a-SiGe solar cell with AZO/Ag/NiCr/Al back reflector is best.The initial conversion efficiency is achieved to be 8.05%.

  20. Self-Assembled Wire Arrays and ITO Contacts for Silicon Nanowire Solar Cell Applications

    Institute of Scientific and Technical Information of China (English)

    YANG Cheng; ZHANG Gang; LEE Dae-Young; LI Hua-Min; LIM Young-Dae; Y00 Won Jong; PARK Young-Jun; KIM Jong-Min

    2011-01-01

    Self-assembly of silicon nanowire(SiNW)arrays is studied using SF6/02 plasma treatment. The self-assembly method can be applied to single- and poly-crystalline Si substrates. Plasma conditions can control the length and diameter of the SiNW arrays. Lower reflectance of the wire arrays over the wavelength range 200-1100nm is obtained. The conducting transparent indium-tin-oxide(ITO) electrode can be fully coated on the self-assembled SiNW arrays by sputtering. The ITO-coated SiNW solar cells show the same low surface light reflectance and a higher carrier collection efficiency than SiNW solar cells without ITO coating. An efficiency enhancement of around 3 times for ITO coated SiNW solar cells is demonstrated via experiments.

  1. Effective hole extraction using MoOx-Al contact in perovskite CH3NH3PbI3 solar cells

    International Nuclear Information System (INIS)

    We report an 11.4%-efficient perovskite CH3NH3PbI3 solar cell using low-cost molybdenum oxide/aluminum (i.e., MoOx/Al) as an alternative top contact to replace noble/precious metals (e.g., Au or Ag) for extracting photogenerated holes. The device performance of perovskite solar cells using a MoOx/Al top contact is comparable to that of cells using the standard Ag top contact. Analysis of impedance spectroscopy measurements suggests that using 10-nm-thick MoOx and Al does not affect charge-recombination properties of perovskite solar cells. Using a thicker (20-nm) MoOx layer leads to a lower cell performance caused mainly by a reduced fill factor. Our results suggest that MoOx/Al is promising as a low-cost and effective hole-extraction contact for perovskite solar cells.

  2. Prospects of Back Surface Field Effect in Ultra-Thin High-Efficiency CdS/CdTe Solar Cells from Numerical Modeling

    Directory of Open Access Journals (Sweden)

    Nowshad Amin

    2010-01-01

    Full Text Available Polycrystalline CdTe shows greater promises for the development of cost-effective, efficient, and reliable thin film solar cells. Results of numerical analysis using AMPS-1D simulator in exploring the possibility of ultrathin, high efficiency, and stable CdS/CdTe cells are presented. The conventional baseline case structure of CdS/CdTe cell has been explored with reduced CdTe absorber and CdS window layer thickness, where 1 μm thin CdTe and 50 nm CdS layers showed reasonable efficiencies over 15%. The viability of 1 μm CdTe absorber layer together with possible back surface field (BSF layers to reduce minority carrier recombination loss at the back contact in ultra thin CdS/CdTe cells was investigated. Higher bandgap material like ZnTe and low bandgap materials like Sb2Te3 and As2Te3 as BSF were inserted to reduce the holes barrier height in the proposed ultra thin CdS/CdTe cells. The proposed structure of SnO2/Zn2SnO4/CdS/CdTe/As2Te3/Cu showed the highest conversion efficiency of 18.6% (Voc = 0.92 V, Jsc = 24.97 mA/cm2, and FF = 0.81. However, other proposed structures such as SnO2/Zn2SnO4/CdS/CdTe/Sb2Te3/Mo and SnO2/Zn2SnO4/CdS/CdTe/ZnTe/Al have also shown better stability at higher operating temperatures with acceptable efficiencies. Moreover, it was found that the cells normalized efficiency linearly decreased with the increased operating temperature with relatively lower gradient, which eventually indicates better stability of the proposed ultra thin CdS/CdTe cells.

  3. Nanopatterned front contact for broadband absorption in ultra-thin amorphous silicon solar cells

    OpenAIRE

    Massiot, I.; Colin, Clément; Péré-Laperne, Nicolas; Roca I Cabarrocas, Pere; Sauvan, Christophe; Lalanne, Philippe; Pelouard, Jean-Luc; Collin, Stéphane

    2012-01-01

    International audience Broadband light trapping is numerically demonstrated in ultra-thin solar cells composed of a flat amorphous silicon absorber layer deposited on a silver mirror. A one-dimensional silver array is used to enhance light absorption in the visible spectral range with low polarization and angle dependencies. In addition, the metallic nanowires play the role of transparent electrodes. We predict a short-circuit current density of 14:6mA=cm2 for a solar cell with a 90 nm-thi...

  4. Design of periodic metal-insulator-metal waveguide back structures for the enhancement of light absorption in thin-film solar cells

    Institute of Scientific and Technical Information of China (English)

    Zheng Gai-Ge; Jiang Jian-Li; Xian Feng-Lin; Qiang Hai-Xia; Wu Hong; Li Xiang-Yin

    2011-01-01

    To increase the absorption in a thin layer of absorbing material (amorphous silicon,arSi),a light trapping design is presented. The designed structure incorporates periodic metal-insulator-metal waveguides to enhance the optical path length of light within the solar cells. The new design can result in broadband optical absorption enhancement not only for transverse magnetic (TM)-polarized light,but also for transverse electric (TE)-polarized light. No plasmonic modes can be excited in TE-polarization,but because of the coupling into the a.Si planar waveguide guiding modes and the diffraction of light by the bottom periodic structures into higher diffraction orders,the total absorption in the active region is also increased. The results from rigorous coupled wave analysis show that the overall optical absorption in the active layer can be greatly enhanced by up to 40%. The designed structures presented in this paper can be integrated with back contact technology to potentially produce high-efficiency thin-film solar cell devices.

  5. Combinatorial Reactive Sputtering of In2S3 as an Alternative Contact Layer for Thin Film Solar Cells.

    Science.gov (United States)

    Siol, Sebastian; Dhakal, Tara P; Gudavalli, Ganesh S; Rajbhandari, Pravakar P; DeHart, Clay; Baranowski, Lauryn L; Zakutayev, Andriy

    2016-06-01

    High-throughput computational and experimental techniques have been used in the past to accelerate the discovery of new promising solar cell materials. An important part of the development of novel thin film solar cell technologies, that is still considered a bottleneck for both theory and experiment, is the search for alternative interfacial contact (buffer) layers. The research and development of contact materials is difficult due to the inherent complexity that arises from its interactions at the interface with the absorber. A promising alternative to the commonly used CdS buffer layer in thin film solar cells that contain absorbers with lower electron affinity can be found in β-In2S3. However, the synthesis conditions for the sputter deposition of this material are not well-established. Here, In2S3 is investigated as a solar cell contact material utilizing a high-throughput combinatorial screening of the temperature-flux parameter space, followed by a number of spatially resolved characterization techniques. It is demonstrated that, by tuning the sulfur partial pressure, phase pure β-In2S3 could be deposited using a broad range of substrate temperatures between 500 °C and ambient temperature. Combinatorial photovoltaic device libraries with Al/ZnO/In2S3/Cu2ZnSnS4/Mo/SiO2 structure were built at optimal processing conditions to investigate the feasibility of the sputtered In2S3 buffer layers and of an accelerated optimization of the device structure. The performance of the resulting In2S3/Cu2ZnSnS4 photovoltaic devices is on par with CdS/Cu2ZnSnS4 reference solar cells with similar values for short circuit currents and open circuit voltages, despite the overall quite low efficiency of the devices (∼2%). Overall, these results demonstrate how a high-throughput experimental approach can be used to accelerate the development of contact materials and facilitate the optimization of thin film solar cell devices. PMID:27173477

  6. Combinatorial Reactive Sputtering of In2S3 as an Alternative Contact Layer for Thin Film Solar Cells.

    Science.gov (United States)

    Siol, Sebastian; Dhakal, Tara P; Gudavalli, Ganesh S; Rajbhandari, Pravakar P; DeHart, Clay; Baranowski, Lauryn L; Zakutayev, Andriy

    2016-06-01

    High-throughput computational and experimental techniques have been used in the past to accelerate the discovery of new promising solar cell materials. An important part of the development of novel thin film solar cell technologies, that is still considered a bottleneck for both theory and experiment, is the search for alternative interfacial contact (buffer) layers. The research and development of contact materials is difficult due to the inherent complexity that arises from its interactions at the interface with the absorber. A promising alternative to the commonly used CdS buffer layer in thin film solar cells that contain absorbers with lower electron affinity can be found in β-In2S3. However, the synthesis conditions for the sputter deposition of this material are not well-established. Here, In2S3 is investigated as a solar cell contact material utilizing a high-throughput combinatorial screening of the temperature-flux parameter space, followed by a number of spatially resolved characterization techniques. It is demonstrated that, by tuning the sulfur partial pressure, phase pure β-In2S3 could be deposited using a broad range of substrate temperatures between 500 °C and ambient temperature. Combinatorial photovoltaic device libraries with Al/ZnO/In2S3/Cu2ZnSnS4/Mo/SiO2 structure were built at optimal processing conditions to investigate the feasibility of the sputtered In2S3 buffer layers and of an accelerated optimization of the device structure. The performance of the resulting In2S3/Cu2ZnSnS4 photovoltaic devices is on par with CdS/Cu2ZnSnS4 reference solar cells with similar values for short circuit currents and open circuit voltages, despite the overall quite low efficiency of the devices (∼2%). Overall, these results demonstrate how a high-throughput experimental approach can be used to accelerate the development of contact materials and facilitate the optimization of thin film solar cell devices.

  7. Combinatorial Reactive Sputtering of In2S3 as an Alternative Contact Layer for Thin Film Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Siol, Sebastian; Dhakal, Tara P.; Gudavalli, Ganesh S.; Rajbhandari, Pravakar P.; DeHart, Clay; Baranowski, Lauryn L.; Zakutayev, Andriy

    2016-06-08

    High-throughput computational and experimental techniques have been used in the past to accelerate the discovery of new promising solar cell materials. An important part of the development of novel thin film solar cell technologies, that is still considered a bottleneck for both theory and experiment, is the search for alternative interfacial contact (buffer) layers. The research and development of contact materials is difficult due to the inherent complexity that arises from its interactions at the interface with the absorber. A promising alternative to the commonly used CdS buffer layer in thin film solar cells that contain absorbers with lower electron affinity can be found in ..beta..-In2S3. However, the synthesis conditions for the sputter deposition of this material are not well-established. Here, In2S3 is investigated as a solar cell contact material utilizing a high-throughput combinatorial screening of the temperature-flux parameter space, followed by a number of spatially resolved characterization techniques. It is demonstrated that, by tuning the sulfur partial pressure, phase pure ..beta..-In2S3 could be deposited using a broad range of substrate temperatures between 500 degrees C and ambient temperature. Combinatorial photovoltaic device libraries with Al/ZnO/In2S3/Cu2ZnSnS4/Mo/SiO2 structure were built at optimal processing conditions to investigate the feasibility of the sputtered In2S3 buffer layers and of an accelerated optimization of the device structure. The performance of the resulting In2S3/Cu2ZnSnS4 photovoltaic devices is on par with CdS/Cu2ZnSnS4 reference solar cells with similar values for short circuit currents and open circuit voltages, despite the overall quite low efficiency of the devices (-2%). Overall, these results demonstrate how a high-throughput experimental approach can be used to accelerate the development of contact materials and facilitate the optimization of thin film solar cell devices.

  8. Efficiency loss prevention in monolithically integrated thin film solar cells by improved front contact

    NARCIS (Netherlands)

    Deelen, J. van; Barink, M.; Klerk, L.; Voorthuijzen, P.; Hovestad, A.

    2015-01-01

    Modeling indicates a potential efficiency boost of 17% if thin-film solar panels are featured with a metallic grid. Variations of transparent conductive oxide sheet resistance, cell length, and grid dimensions are discussed. These parameters were optimized simultaneously to obtain the best result. M

  9. Decrease of back recombination rate in CdS quantum dots sensitized solar cells using reduced graphene oxide

    Institute of Scientific and Technical Information of China (English)

    Ali Badawi

    2015-01-01

    The photovoltaic performance of CdS quantum dots sensitized solar cells (QDSSCs) using the 0.2 wt%of reduced graphene oxide and TiO2 nanoparticles (RGO+TiO2 nanocomposite) photoanode is investigated. CdS QDs are adsorbed onto RGO+TiO2 nanocomposite films by the successive ionic layer adsorption and reaction (SILAR) technique for several cycles. The current density–voltage (J–V ) characteristic curves of the assembled QDSSCs are measured at AM1.5 sim-ulated sunlight. The optimal photovoltaic performance for CdS QDSSC was achieved for six SILAR cycles. Solar cells based on the RGO+TiO2 nanocomposite photoanode achieve a 33%increase in conversion efficiency (η) compared with those based on plain TiO2 nanoparticle (NP) photoanodes. The electron back recombination rates decrease significantly for CdS QDSSCs based on RGO+TiO2 nanocomposite photoanodes. The lifetime constant (τ) for CdS QDSSC based on the RGO+TiO2 nanocomposite photoanode is at least one order of magnitude larger than that based on the bare TiO2NPs photoanode.

  10. Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells

    Science.gov (United States)

    Wu, Yuanyuan; Ji, Lian; Dai, Pai; Tan, Ming; Lu, Shulong; Yang, Hui

    2016-02-01

    Solid-state molecular beam epitaxy (MBE)-grown InGaAsP/InGaAs dual-junction solar cells on InP substrates are reported. An efficiency of 10.6% under 1-sun AM1.5 global light intensity is realized for the dual-junction solar cell, while the efficiencies of 16.4 and 12.3% are reached for the top InGaAsP and bottom InGaAs cells, respectively. The effects of the buffer layer and back-surface field on the performance of solar cells are discussed. High device performance is achieved in the case of a low concentration of oxygen and weak recombination when InGaAs buffers and InP back-surface field layers are used, respectively.

  11. Modeling and optimization of white paint back reflectors for thin-film silicon solar cells

    NARCIS (Netherlands)

    Lipovšek, B.; Krč, J.; Isabella, O.; Zeman, M.; Topič, M.

    2010-01-01

    Diffusive dielectric materials such as white paint have been demonstrated as effective back reflectors in the photovoltaic technology. In this work, a one-dimensional (1D) optical modeling approach for simulation of white paint films is developed and implemented in a 1D optical simulator for thin-fi

  12. All-back-Schottky-contact thin-film photovoltaics

    Science.gov (United States)

    Nardone, Marco

    2016-02-01

    The concept of All-Back-Schottky-Contact (ABSC) thin-film photovoltaic (TFPV) devices is introduced and evaluated using 2D numerical simulation. Reach-through Schottky junctions due to two metals of different work functions in an alternating, side-by-side pattern along the non-illuminated side generate the requisite built-in field. It is shown that our simulation method quantitatively describes existing data for a recently demonstrated heterojunction thin-film cell with interdigitated back contacts (IBCs) of one metal type. That model is extended to investigate the performance of ABSC devices with bimetallic IBCs within a pertinent parameter space. Our calculations indicate that 20% efficiency is achievable with micron-scale features and sufficient surface passivation. Bimetallic, micron-scale IBCs are readily fabricated using photo-lithographic techniques and the ABSC design allows for optically transparent surface passivation layers that need not be electrically conductive. The key advantages of the ABSC-TFPV architecture are that window layers, buffer layers, heterojunctions, and module scribing are not required because both contacts are located on the back of the device.

  13. Transmission Electron Microscopy of the Textured Silver Back Reflector of a Thin Film Silicon Solar Cell: From Crystallography to Optical Absorption

    DEFF Research Database (Denmark)

    Duchamp, Martial; Söderström, K.; Jeangros, Q.;

    2011-01-01

    The study of light trapping in amorphous, microcrystalline and micromorph thin-film Si solar cells is an important and active field of investigation. It has been demonstrated that the use of a rough Ag back-reflector lead to an increase of short circuit current but also to losses through the crea...

  14. Optimization of solar cell contacts by system cost-per-watt minimization

    Science.gov (United States)

    Redfield, D.

    1977-01-01

    New, and considerably altered, optimum dimensions for solar-cell metallization patterns are found using the recently developed procedure whose optimization criterion is the minimum cost-per-watt effect on the entire photovoltaic system. It is also found that the optimum shadow fraction by the fine grid is independent of metal cost and resistivity as well as cell size. The optimum thickness of the fine grid metal depends on all these factors, and in familiar cases it should be appreciably greater than that found by less complete analyses. The optimum bus bar thickness is much greater than those generally used. The cost-per-watt penalty due to the need for increased amounts of metal per unit area on larger cells is determined quantitatively and thereby provides a criterion for the minimum benefits that must be obtained in other process steps to make larger cells cost effective.

  15. Development of low cost contacts to silicon solar cells. Final report, 15 October 1978-30 April 1980

    Energy Technology Data Exchange (ETDEWEB)

    Tanner, D.P.; Iles, P.A.

    1980-01-01

    A summary of work done on the development of a copper based contact system for silicon solar cells is presented. The work has proceeded in three phases: (1) Development of a copper based contact system using plated Pd-Cr-Cu. Good cells were made but cells degraded under low temperature (300/sup 0/C) heat treatments. (2) The degradation in Phase I was identified as copper migration into the cells junction region. A paper study was conducted to find a proper barrier to the copper migration problem. Nickel was identified as the best candidate barrier and this was verified in a heat treatment study using evaporated metal layers. (3) An electroless nickel solution was substituted for the electroless chrominum solution in the original process. Efforts were made to replace the palladium bath with an appropriate nickel layer, but these were unsuccessful. 150 cells using the Pd-Ni-Cu contact system were delivered to JPL. Also a cost study was made on the plating process to assess the chance of reaching 5 cents/watt.

  16. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

    OpenAIRE

    Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

    2014-01-01

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-w...

  17. Investigation of Structural, Chemical, and Electrical Properties of CdTe/Back Contact Interface by TEM and XPS

    Science.gov (United States)

    Han, Jun-feng; Krishnakumar, V.; Schimper, H.-J.; Cha, Li-mei; Liao, Cheng

    2015-10-01

    CdTe solar cell back contact preparation usually includes a chemical etching process which helps to obtain a Te-rich p-doped CdTe surface. In this work we compared the influence of two different etching solutions [nitricâ€"phosphoric (NP) and nitricâ€"acetic acid (NA)] on the CdTe surface. Transmission electron microscopy indicated that a Te-rich layer was formed on the surface of polycrystalline CdTe films after the etching process. The layer thickness was 80 nm and 10 nm for NP and NA etching solutions, respectively. In addition, the images showed that the influence of the etching solution was preferentially along the grain boundaries. The chemical properties of the etched CdTe surface were studied by using x-ray photoelectron spectroscopy. The nitricâ€"phosphoric acid yielded a relatively thicker Te-rich layer on the CdTe surface. On the other hand, the Jâ€" V properties of the solar cells prepared using nitricâ€"acetic acid showed no rollover behavior, indicating improved back contact. The solar cells prepared with the NA and NP etching processes yielded >10% solar cell efficiency. The CdTe solar cell homogeneity was improved by the NA etching method.

  18. Applications of ``PV Optics`` for solar cell and module design

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B.L.; Madjdpour, J.; Chen, W. [National Renewable Energy Lab., Golden, CO (United States)

    1998-09-01

    This paper describes some applications of a new optics software package, PV Optics, developed for the optical design of solar cells and modules. PV Optics is suitable for the analysis and design of both thick and thin solar cells. It also includes a feature for calculation of metallic losses related to contacts and back reflectors.

  19. A novel p-type and metallic dual-functional Cu-Al2O3 ultra-thin layer as the back electrode enabling high performance of thin film solar cells.

    Science.gov (United States)

    Lin, Qinxian; Su, Yantao; Zhang, Ming-Jian; Yang, Xiaoyang; Yuan, Sheng; Hu, Jiangtao; Lin, Yuan; Liang, Jun; Pan, Feng

    2016-09-14

    Increasing the open-circuit voltage (Voc) along with the fill factor (FF) is pivotal for the performance improvement of solar cells. In this work, we report the design and construction of a new structure of CdS/CdTe/Al2O3/Cu using the atomic layer deposition (ALD) method, and then we control Cu diffusion through the Al2O3 atomic layer into the CdTe layer. Surprisingly, this generates a novel p-type and metallic dual-functional Cu-Al2O3 atomic layer. Due to this dual-functional character of the Cu-Al2O3 layer, an efficiency improvement of 2% in comparison with the standard cell was observed. This novel dual-functional back contact structure could also be introduced into other thin film solar cells for their efficiency improvement. PMID:27384986

  20. Compositional Change of the Au-Cu2Te Contact for Thin-Film CdS/CdTe Solar Cells

    Science.gov (United States)

    Uda, Hiroshi; Ikegami, Seiji; Sonomura, Hajimu

    1990-03-01

    The stability of thin-film CdS/CdTe solar cells with evaporated Au-Cu2Te contacts to the CdTe film has been investigated. A decrease in conversion efficiency due to an increase in series resistance was observed in the solar cells stored in air at room temperature for 120 days. The increase in series resistance is caused by an increase in contact resistance resulting from the compositional change in the Au-Cu2Te contact to the CdTe film.

  1. Characterization of laser doped silicon and overcoming adhesion challenges of solar cells with nickel-copper plated contacts

    Energy Technology Data Exchange (ETDEWEB)

    Geisler, Christian

    2015-07-01

    The combination of localized laser patterning and metal plating allows to replace conventional silver screen printing with nickel-copper plating to form inexpensive front contacts for crystalline silicon solar cells. In this work, a focus is put on effects that could cause inhomogeneous metal deposition and low metal contact adhesion. A descriptive model of the silicon nitride ablation mechanism is derived from SEM imaging and a precise recombination analysis using QSSPC measurements. Surface sensitive XPS measurements are conducted to prove the existence of a parasitic surface layer, identified as SiO{sub x}N{sub y}. The dense SiO{sub x}N{sub y} layer is an effective diffusion barrier, hindering the formation of a nickel silicide interlayer. After removal of the SiO{sub x}N{sub y} layer, cells show severe degradation caused by metal-induced shunting. These shunts are imaged using reverse biased electroluminescence imaging. A shunting mechanism is proposed and experimentally verified. New laser process sequences are devised and proven to produce cells with adhering Ni-Cu contacts. Conclusively the developed processes are assessed based on their industrial feasibility as well as on their efficiency potential.

  2. Fire-through Ag contact formation for crystalline Si solar cells using single-step inkjet printing.

    Science.gov (United States)

    Kim, Hyun-Gang; Cho, Sung-Bin; Chung, Bo-Mook; Huh, Joo-Youl; Yoon, Sam S

    2012-04-01

    Inkjet-printed Ag metallization is a promising method of forming front-side contacts on Si solar cells due to its non-contact printing nature and fine grid resolution. However, conventional Ag inks are unable to punch through the SiN(x) anti-reflection coating (ARC) layer on emitter Si surfaces. In this study, a novel formulation of Ag ink is examined for the formation of fire-through contacts on a SiN(x)-coated Si substrate using the single-step printing of Ag ink, followed by rapid thermal annealing at 800 degrees C. In order to formulate Ag inks with fire-through contact formation capabilities, a liquid etching agent was first formulated by dissolving metal nitrates in an organic solvent and then mixing the resulting solution with a commercial Ag nanoparticle ink at various volume ratios. During the firing process, the dissolved metal nitrates decomposed into metal oxides and acted in a similar manner to the glass frit contained in Ag pastes for screen-printed Ag metallization. The newly formulated ink with a 1 wt% loading ratio of metal oxides to Ag formed finely distributed Ag crystallites on the Si substrate after firing at 800 degrees C for 1 min. PMID:22849181

  3. High resolution, low cost solar cell contact development. Quarterly technical progress and schedule report, September 28, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Mardesich, N.

    1980-01-01

    The scope of the contract covers the development and evaluation of forming solar cell collector grid contacts by the MIDFILM process. This is a proprietary process developed by the Ferro Corporation which is a subcontractor for the program. The MIDFILM process attains line resolution characteristics of photoresist methods with processing related to screen printing. The surface to be processed is first coated with a thin layer of photoresist material. Upon exposure to ultraviolet light through a suitable mask, the resist in the non-pattern area cross-links and becomes hard. The unexposed pattern areas remain tacky. The conductor material is applied in the form of a dry mixture of metal and frit particles which adhere to the tacky pattern area. The assemblage is then fired to ash the photopolymer and sinter the fritted conductor powder. Effort was concentrated during this period on the establishment, optimization and identification of problem areas of the MIDFILM process. Progress is reported. (WHK)

  4. Silicon quantum dots in SiO{sub x} dielectrics as energy selective contacts in hot carrier solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kar, Debjit; Das, Debajyoti, E-mail: erdd@iacs.res.in [Nano-Science Group, Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata – 700032 (India)

    2015-06-24

    Thin films of c-Si QDs embedded in a-SiO{sub x} dielectric matrix was achieved at a low temperature ∼400°C, from one step process by reactive rf magnetron co-sputtering of c-Si wafer and pure SiO{sub 2} targets, in the (H{sub 2}+Ar)- plasma. Formation of a double-barrier structure has been primarily identified from the SAX data and exclusively confirmed from the resonant tunneling current appearing in the J-E characteristic curve peaks, determined by the discrete energy levels of c-Si QDs, at which it could be used as energy selective contacts in hot carrier solar cells.

  5. Influence of wavelength on laser doping and laser-fired contact processes for c-Si solar cells

    Science.gov (United States)

    Molpeceres, Carlos; Sánchez-Aniorte, María. Isabel; Morales, Miguel; Muñoz, David; Martín, Isidro; Ortega, Pablo; Colina, Mónica; Voz, Cristóbal; Alcubilla, Ramón

    2012-10-01

    This work investigates the influence of the laser wavelength on laser doping (LD) and laser-fired contact (LFC) formation in solar cell structures. We compare the results obtained using the three first harmonics (corresponding to wavelengths of 1064 nm, 532 nm and 355 nm) of fully commercial solid state laser sources with pulse width in the ns range. The discussion is based on the impact on the morphology and electrical characteristics of test structures. In the case of LFC the study includes the influence of different passivation layers and the assessment of the process quality through electrical resistance measurements of an aluminium single LFC point for the different wavelengths. Values for the normalized LFC resistance far below 1.0 mΩcm2 have been obtained, with better results at shorter wavelengths. To assess the influence of the laser wavelength on LD we have created n+ regions into p-type c-Si wafers, using a dry LD approach to define punctual emitters. J-V characteristics show exponential trends at mid-injection for a broad parametric window in all wavelengths, with local ideality factors well below 1.5. In both processes the best results have been obtained using green (532 nm) and, specially, UV (355 nm). This indicates that to minimize the thermal damage in the material is a clear requisite to obtain the best electrical performance, thus indicating that UV laser shows better potential to be used in high efficiency solar cells.

  6. Electrochemical etching of molybdenum for shunt removal in thin film solar cells

    NARCIS (Netherlands)

    Hovestad, A.; Bressers, P.M.M.C.; Meertens, R.M.; Frijters, C.H.; Voorthuijzen, W.P.

    2015-01-01

    High yield and reproducible production is a major challenge in up-scaling thin film Cu(In,Ga)Se2(CIGS) solar cells to large area roll-to-roll industrial manufacturing. Pinholes enabling Ohmic contact between the ZnO:Al front-contact and Mo back contact of the CIGS cell create electrical shunts that

  7. Absorption enhancement in CH3NH3PbI3 solar cell using a TiO2/MoS2 nanocomposite electron selective contact

    Science.gov (United States)

    Imran Ahmed, Muhammad; Hussain, Zakir; Khalid, Amir; Noman Amin, Hafiz Muhammad; Habib, Amir

    2016-04-01

    In the present contribution, perovskite absorbers have been combined with few layer thick MoS2 semiconductor to put together a solar cell allowing broad spectrum harvesting of solar radiations. Such modification allows to achieve solar light harvesting at the band edges, addressing a drawback of CH3NH3PbI3 absorbers. We recorded an improved efficiency from 3.7% to 4.3% on the back of this methodology. We have also worked out a novel methodology to synthesize TiO2/MoS2 nanocomposite by in situ dispersion of liquid exfoliated MoS2 sheets in the sol gel reaction.

  8. Photovoltaic solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Nielson, Gregory N; Cruz-Campa, Jose Luis; Okandan, Murat; Resnick, Paul J

    2014-05-20

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electricity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  9. Photovoltaic solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2013-11-26

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  10. Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell backed by a metallic surface-relief grating.

    Science.gov (United States)

    Solano, Manuel; Faryad, Muhammad; Hall, Anthony S; Mallouk, Thomas E; Monk, Peter B; Lakhtakia, Akhlesh

    2013-02-10

    The rigorous coupled-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic surface-relief grating as its back reflector. The absorptance is a function of the angle of incidence and the polarization state of incident light; the free-space wavelength; and the period, duty cycle, the corrugation height, and the shape of the unit cell of the surface-relief grating. The solar cell was assumed to be made of hydrogenated amorphous-silicon alloys and the back reflector of bulk aluminum. The incidence and the grating planes were taken to be identical. The AM1.5 solar irradiance spectrum was used for computations in the 400-1100 nm wavelength range. Inspection of parametric plots of the solar-spectrum-integrated (SSI) absorption efficiency and numerical optimization using the differential evolution algorithm were employed to determine the optimal surface-relief grating. For direct insolation, the SSI absorption efficiency is maximizable by appropriate choices of the period, the duty cycle, and the corrugation height, regardless of the shape of the corrugation in each unit cell of the grating. A similar conclusion also holds for diffuse insolation, but the maximum efficiency for diffuse insolation is about 20% smaller than for direct insolation. Although a tin-doped indium-oxide layer at the front and an aluminum-doped zinc-oxide layer between the semiconductor material and the backing metallic layer change the optimal depth of the periodic corrugations, the optimal period of the corrugations does not significantly change. PMID:23400058

  11. Engineering Schottky contacts in open-air fabricated heterojunction solar cells to enable high performance and ohmic charge transport.

    Science.gov (United States)

    Hoye, Robert L Z; Heffernan, Shane; Ievskaya, Yulia; Sadhanala, Aditya; Flewitt, Andrew; Friend, Richard H; MacManus-Driscoll, Judith L; Musselman, Kevin P

    2014-12-24

    The efficiencies of open-air processed Cu2O/Zn(1-x)Mg(x)O heterojunction solar cells are doubled by reducing the effect of the Schottky barrier between Zn(1-x)Mg(x)O and the indium tin oxide (ITO) top contact. By depositing Zn(1-x)Mg(x)O with a long band-tail, charge flows through the Zn(1-x)Mg(x)O/ITO Schottky barrier without rectification by hopping between the sub-bandgap states. High current densities are obtained by controlling the Zn(1-x)Mg(x)O thickness to ensure that the Schottky barrier is spatially removed from the p-n junction, allowing the full built-in potential to form, in addition to taking advantage of the increased electrical conductivity of the Zn(1-x)Mg(x)O films with increasing thickness. This work therefore shows that the Zn(1-x)Mg(x)O window layer sub-bandgap state density and thickness are critical parameters that can be engineered to minimize the effect of Schottky barriers on device performance. More generally, these findings show how to improve the performance of other photovoltaic system reliant on transparent top contacts, e.g., CZTS and CIGS. PMID:25418326

  12. Predicted photoreflectance signatures on QD selective contacts for hot carrier solar cells

    OpenAIRE

    Cánovas Díaz, Enrique; Martí Vega, Antonio; García-Linares Fontes, Pablo; Antolín Fernández, Elisa; Fuertes Marrón, David; Tablero Crespo, César; Luque López, Antonio

    2008-01-01

    The CO2 emission of our present energy transformation processes, based mainly on burning fossil fuels, is possibly the main cause of global climatic change. The photovoltaic conversion of solar energy is a clean way of producing which for sustainability should (and most probably will) become a major source of electricity. The sun is a huge resource but relatively diluted and it is reasonable to expect that only high efficiency extraction can be cost effective for mass exploitation. New concep...

  13. Carbon nanotube-based hybrid hole-transporting material and selective contact for high efficiency perovskite solar cells

    OpenAIRE

    Aitola, Kerttu; Sveinbjörnsson, Kári; Correa-Baena, Juan-Pablo; Kaskela, Antti; Abate, Antonio; Tian, Ying; Johansson, Erik M. J.; Graetzel, Michael; Kauppinen, Esko I.; Hagfeldt, Anders; Boschloo, Gerrit

    2016-01-01

    We demonstrate a high efficiency perovskite solar cell with a hybrid hole-transporting material-counter electrode based on a thin single-walled carbon nanotube (SWCNT) film and a drop-cast 2,2,7,-7-tetrakis(N, N-di-p-methoxyphenylamine)-9,90-spirobifluorene (Spiro-OMeTAD) hole-transporting material (HTM). The average efficiency of the solar cells was 13.6%, with the record cell yielding 15.5% efficiency. The efficiency of the reference solar cells with spin-coated Spiro-OMeTAD hole-transporti...

  14. Photovoltaic solar cell

    Science.gov (United States)

    Nielson, Gregory N.; Gupta, Vipin P.; Okandan, Murat; Watts, Michael R.

    2015-09-08

    A photovoltaic solar concentrator is disclosed with one or more transverse-junction solar cells (also termed point contact solar cells) and a lens located above each solar cell to concentrate sunlight onto the solar cell to generate electricity. Piezoelectric actuators tilt or translate each lens to track the sun using a feedback-control circuit which senses the electricity generated by one or more of the solar cells. The piezoelectric actuators can be coupled through a displacement-multiplier linkage to provide an increased range of movement of each lens. Each lens in the solar concentrator can be supported on a frame (also termed a tilt plate) having three legs, with the movement of the legs being controlled by the piezoelectric actuators.

  15. Mismatched front and back gratings for optimum light trapping in ultra-thin crystalline silicon solar cells

    Science.gov (United States)

    Hsu, Wei-Chun; Tong, Jonathan K.; Branham, Matthew S.; Huang, Yi; Yerci, Selçuk; Boriskina, Svetlana V.; Chen, Gang

    2016-10-01

    The implementation of a front and back grating in ultra-thin photovoltaic cells is a promising approach towards improving light trapping. A simple design rule was developed using the least common multiple (LCM) of the front and back grating periods. From this design rule, several optimal period combinations can be found, providing greater design flexibility for absorbers of indirect band gap materials. Using numerical simulations, the photo-generated current (Jph) for a 10-μm-thick crystalline silicon absorber was predicted to be as high as 38 mA/cm2, which is 11.74% higher than that of a single front grating (Jph=34 mA/cm2).

  16. N/P GaAs concentrator solar cells with an improved grid and bushbar contact design

    International Nuclear Information System (INIS)

    The major requirements for a solar cell used in space applications are high efficiency at AMO irradiance and resistance to high energy radiation. Gallium arsenide, with a band gap of 1.43 eV, is one of the most efficient sunlight to electricity converters (25%) when the the simple diode model is used to calculate efficiencies at AMO irradiance, GaAs solar cells are more radiation resistant than silicon solar cells and the N/P GaAs device has been reported to be more radiation resistant than similar P/N solar cells. This higher resistance is probably due to the fact that only 37% of the current is generated in the top N layer of the N/P cell compared to 69% in the top layer of a P/N solar cell. This top layer of the cell is most affected by radiation. It has also been theoretically calculated that the optimized N/P device will prove to have a higher efficiency than a similar P/N device. The use of a GaP window layer on a GaAs solar cell will avoid many of the inherent problems normally associated with a GaAlAs window while still proving good passivation of the GaAs surface. An optimized circular grid design for solar cell concentrators has been shown which incorporates a multi-layer metallization scheme. This multi-layer design allows for a greater current carrying capacity for a unit area of shading, which results in a better output efficiency

  17. Thin film CdTe solar cells by close spaced sublimation: Recent results from pilot line

    International Nuclear Information System (INIS)

    CdTe is an attractive material to produce high efficient and low cost thin film solar cells. The semiconducting layers of this kind of solar cell can be deposited by the Close Spaced Sublimation (CSS) process. The advantages of this technique are high deposition rates and an excellent utilization of the raw material, leading to low production costs and competitive module prices. CTF Solar GmbH is offering equipment and process knowhow for the production of CdTe solar modules. For further improvement of the technology, research is done at a pilot line, which covers all relevant process steps for manufacture of CdTe solar cells. Herein, we present the latest results from the process development and our research activities on single functional layers as well as for complete solar cell devices. Efficiencies above 13% have already been obtained with Cu-free back contacts. An additional focus is set on different transparent conducting oxide materials for the front contact and a Sb2Te3 based back contact. - Highlights: ► Laboratory established on industrial level for CdTe solar cell research ► 13.0% cell efficiency with our standard front contact and Cu-free back contact ► Research on ZnO-based transparent conducting oxide and Sb2Te3 back contacts ► High resolution scanning electron microscopy analysis of ion polished cross section

  18. Crystalline Fraction and Doping Concentration Effect on Heterojunction Solar Cells n-Doped µc-Si:H Back Surface Field Layer.

    Science.gov (United States)

    Kim, Sangho; Shin, Chonghoon; Balaji, Nagarajan; Yi, Junsin

    2015-03-01

    The back surface field (BSF) plays a vital role for high efficiency in the Heterojunction Intrinsic Thin (HIT) film solar cell. This paper investigated the effect of crystalline volume fraction (Xc) and 1% hydrogen diluted phosphine (PH3) gas doping concentration of the n-type µc-Si:H back surface file (BSF) layer. Initially, the thickness of the n-type µc-Si:H BSF layer was optimized. With increase in Xc from 6% to 59%, the open circuit voltage (Voc) increased from 573 mV to 696 mV, and the fill factor (FF) also increased from 59% to 71%. In the long wavelengths region (≥ 950 nm), the QE of the solar cells decreased over the optimized Xc of the n-doped micro BSF layer, due to the defects of a film. In the second part of this paper, the effect of high conductivity n-type µc-Si:H BSF layer with optimized thickness on the performance of HIT solar cells was investigated, by doping gas ratio variation. Even though Xc decreased, conductivity was increased, with increasing PH3 doping concentration. Under the optimized condition, a n-µc-Si:H BSF layer has a dark conductivity of 2.59 S/cm, activation energy of 0.0519 eV, and X, of 52%. The conversion efficiency of 18.9% was achieved with a Voc of 706 mV, fill factor of 72%, and short circuit current density of 37.1 mW·cm(-2).

  19. Solar cells

    Science.gov (United States)

    Cuquel, A.; Roussel, M.

    The physical and electronic characteristics of solar cells are discussed in terms of space applications. The principles underlying the photovoltaic effect are reviewed, including an analytic model for predicting the performance of individual cells and arrays of cells. Attention is given to the effects of electromagnetic and ionizing radiation, micrometeors, thermal and mechanical stresses, pollution and degassing encountered in space. The responses of different types of solar cells to the various performance-degrading agents are examined, with emphasis on techniques for quality assurance in the manufacture and mounting of Si cells.

  20. Relating Charge Transport, Contact Properties, and Recombination to Open-Circuit Voltage in Sandwich-Type Thin-Film Solar Cells

    Science.gov (United States)

    Sandberg, Oskar J.; Sundqvist, Anton; Nyman, Mathias; Österbacka, Ronald

    2016-04-01

    To avoid surface recombination at the contacts and ensure efficient charge collection and high open-circuit voltages (VOC) in organic bulk heterojunction and perovskite solar cells, selective contacts with optimized energy levels are needed. However, a detailed theoretical understanding of how the device performance is affected by surface recombination at the contacts is still lacking. In this work, the influence of surface recombination on the open-circuit voltage in sandwich-type solar cells, with optically thin active layers, is clarified using numerical simulations. Furthermore, analytical expressions are derived, directly relating VOC to relevant device parameters, such as surface recombination velocity (Sp), mobility, and active layer thickness. At large Sp, the surface recombination is determined by diffusion-limited transport in the bulk. By reducing Sp, thus increasing the charge selectivity of the electrode, the surface recombination is eventually reduced as the transport becomes limited by interface kinetics at the contact. Depending on the interplay between surface recombination and bulk recombination, and the properties of the contacts, different operating regimes are identified featuring different light ideality factors and thickness dependences.

  1. Effect of TiO2 nanotube length and lateral tubular spacing on photovoltaic properties of back illuminated dye sensitized solar cell

    Indian Academy of Sciences (India)

    Shantikumar V Nair; A Balakrishnan; K R V Subramanian; A M Anu; A M Asha; B Deepika

    2012-08-01

    The main objective of this study is to show the effect of TiO2 nanotube length, diameter and intertubular lateral spacings on the performance of back illuminated dye sensitized solar cells (DSSCs). The present study shows that processing short TiO2 nanotubes with good lateral spacings could significantly improve the performance of back illuminated DSSCs. Vertically aligned, uniform sized diameter TiO2 nanotube arrays of different tube lengths have been fabricated on Ti plates by a controlled anodization technique at different times of 24, 36, 48 and 72 h using ethylene glycol and ammonium fluoride as an electrolyte medium. Scanning electron microscopy (SEM) showed formation of nanotube arrays spread uniformly over a large area. X-ray diffraction (XRD) of TiO2 nanotube layer revealed the presence of crystalline anatase phases. By employing the TiO2 nanotube array anodized at 24 h showing a diameter ∼80 nm and length ∼1.5 m as the photo-anode for back illuminated DSSCs, a full-sun conversion efficiency () of 3.5%was achieved, the highest value reported for this length of nanotubes.

  2. Interface studies on the tunneling contact of a MOCVD-prepared tandem solar cell; Grenzflaechenuntersuchungen am Tunnelkontakt einer MOCVD-praeparierten Tandemsolarzelle

    Energy Technology Data Exchange (ETDEWEB)

    Seidel, U.

    2007-07-10

    In this thesis a tandem solar cell with a novel tunneling contact was developed. For the development of the monolithic preparation especailly critical hetero-interfaces were studied in the region of the tunneling contact with surface-sensitive measuring method. The tandem solar cell consisted of single solar cells with absorber layers of In{sub 0.53}Ga{sub 0.47}As (E{sub g}=0.73 eV) and In{sub 0.78}Ga{sub 0.22}As{sub 0.491}P{sub 0.51} (E{sub g}=1.03 eV), the serial switching of which was pursued with a tunneling contact (ESAKI diode, which consisted of a very thin n-doped InGaAs and a p-doped GaAsSb layer. The III-V semiconductor layers were prepared by metalorganic gas phase epitaxy (MOCVD) monocrystallinely on an InP(100) substrate lattice-matchedly. Especially the influence of the preparation of InGaAs surfaces on the sharpness of the InGaAs/GaAsSb interface was in-situ studied by reflection-anisotropy spectroscopy and after a contamination-free transfer into the ultrahigh vacuum with photoelectron spectroscopy and with low-energetic electron diffraction (LEED). Thereby for the first time three different reconstructions of the MOCVD-prepared InGaAs surfaces could be observed, which were dependent on the heating temperature under pure hydrogen. The arsenic-rich InGaAs surface was observed for temperatures less than 300 C and showed in the LEED picture a (4 x 3) reconstruction. In the temperature range from 300 C until about 500 C a (2 x 4) reconstruction was observed, above 500 C the InGaAs surface 94 x 2)/c(8 x 2) was reconstructed. Subsequently the study of the growth of thin GaAsSb layers on these three InGaAs surface reconstructions followed. XPS measurements showed that the Sb/As ratio in GaAsSb at the growth on the As-rich (4 x 3) reconstructed surface in the first monolayers was too low. The preparation of the GaAsSb on the two other InGaAs surfaces yielded however in both cases a distinctly higher Sb/As ratio. Finally tandem solar cells with differently

  3. Impact of built-in fields and contact configuration on the characteristics of ultra-thin GaAs solar cells

    CERN Document Server

    Aeberhard, Urs

    2016-01-01

    We discuss the effects of built-in fields and contact configuration on the photovoltaic characteristics of ultrathin GaAs solar cells. The investigation is based on advanced quantum-kinetic simulations reaching beyond the standard semi-classical bulk picture concerning the consideration of charge carrier states and dynamics in complex potential profiles. The thickness dependence of dark and photocurrent in the ultra-scaled regime is related to the corresponding variation of both, the built-in electric fields and associated modification of the density of states, and the optical intensity in the films. Losses in open-circuit voltage and short-circuit current due to leakage of electronically and optically injected carriers at minority carrier contacts are investigated for different contact configurations including electron and hole blocking barrier layers. The microscopic picture of leakage currents is connected to the effect of finite surface recombination velocities in the semi-classical description, and the i...

  4. Development of ZnTe:Cu Contacts for CdTe Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-08-320

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, R.

    2012-04-01

    The main focus of the work at NREL was on the development of Cu-doped ZnTe contacts to CdTe solar cells in the substrate configuration. The work performed under the CRADA utilized the substrate device structure used at NREL previously. All fabrication was performed at NREL. We worked on the development of Cu-doped ZnTe as well as variety of other contacts such as Sb-doped ZnTe, CuxTe, and MoSe2. We were able to optimize the contacts to improve device parameters. The improvement was obtained primarily through increasing the open-circuit voltage, to values as high as 760 mV, leading to device efficiencies of 7%.

  5. Concentration of solar radiation by white backed photovoltaic panels.

    Science.gov (United States)

    Smestad, G; Hamill, P

    1984-12-01

    In this paper, we present an analysis of the concentration achieved by white backed photovoltaic panels. Concentration is due to the trapping by light scattered in the refractive plate to which the solar cell is bonded. Using the reciprocity relation and assuming the ideal case of a Lambertian distribution, a detailed model is formulated that includes the effects of the thickness and walls of the concentrator. This model converges to the thermodynamic limit and is found to be consistent with experimental results for a wide range of cell sizes. Finally, the model is generalized to multiple-cell photovoltaic panels.

  6. Solar cells

    International Nuclear Information System (INIS)

    A method of producing solar cells is described which consists of producing a substantially monocrystalline tubular body of silicon or other suitable semiconductor material, treating this body to form an annular rectifying junction and then cutting it longitudinally to form a number of nearly flat ribbons from which the solar cells are fabricated. The P=N rectifying junction produced by the formation of silicon dioxide on the layers at the inner and outer surfaces of the body can be formed by ion-implantation or diffusion. (U.K.)

  7. Carrier dynamics and design optimization of electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cell

    Science.gov (United States)

    Chen, Wenchao; Seol, Gyungseon; Rinzler, Andrew G.; Guo, Jing

    2012-03-01

    Carrier dynamics of the electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cells is explored by numerical simulations. Operation mechanisms of the solar cells with and without the electrolyte-induced inversion layer are presented and compared, which clarifies the current flow mechanisms in a solar cell with an induced inversion layer. A heavily doped back contact layer can behave as a hole block layer. In addition to lowering contact resistance and surface recombination, it is particularly useful for improving carrier separation in an electrolyte-induced inversion layer solar cell or a metal-insulator-semiconductor grating solar cell.

  8. Nanocrystal Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Gur, Ilan

    2006-12-15

    This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

  9. Doping-free silicon thin film solar cells using a vanadium pentoxide window layer and a LiF/Al back electrode

    Science.gov (United States)

    Jung, Hyung Hwan; Kwon, Jung-Dae; Lee, Sunghun; Su Kim, Chang; Nam, Kee-Seok; Jeong, Yongsoo; Chung, Kwun-Bum; Yoon Ryu, Seung; Ocak, Tülay; Eray, Aynur; Kim, Dong-Ho; Park, Sung-Gyu

    2013-08-01

    This work describes the preparation of a doped layer-free hydrogenated amorphous silicon (a-Si:H) thin film solar cell consisting of a vanadium pentoxide (V2O5-x) window layer, an intrinsic a-Si:H absorber layer, and a lithium fluoride (LiF)/aluminum (Al) back electrode. The large difference between the work functions of the V2O5-x layer and the LiF/Al electrode permitted photogenerated carriers in the i-a-Si:H absorber layer to be effectively separated and collected. The effects of the V2O5-x layer thickness and the oxidation states on the photovoltaic performance were investigated in detail. X-ray photoelectron spectroscopy analysis confirmed that the major species of the sputtered V2O5-x thin films were V5+ and V4+. Optimization of the V2O5-x window layer yielded a power conversion efficiency of 7.04%, which was comparable to the power conversion efficiency of a typical a-Si:H solar cell (7.09%).

  10. Cu Migration in Polycrystalline CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Da [Arizona State University; Akis, Richard [Arizona State University; Brinkman, Daniel [Arizona State University; Sankin, Igor [First Solar; Fang, Tian [First Solar; Vasileska, Dragica [Arizona State University; Ringhofer, Christian [Arizona State University

    2014-03-12

    An impurity reaction-diffusion model is applied to Cu defects and related intrinsic defects in polycrystalline CdTe for a better understanding of Cu’s role in the cell level reliability of CdTe PV devices. The simulation yields transient Cu distributions in polycrystalline CdTe during solar cell processing and stressing. Preliminary results for Cu migration using available diffusivity and solubility data show that Cu accumulates near the back contact, a phenomena that is commonly observed in devices after back-contact processing or stress conditions.

  11. Solar cells

    Science.gov (United States)

    Treble, F. C.

    1980-11-01

    The history, state of the art, and future prospects of solar cells are reviewed. Solar cells are already competitive in a wide range of low-power applications, and during the 1980's they are expected to become cheaper to run than diesel or gasoline generators, the present mainstay of isolated communities. At this stage they will become attractive for water pumping, irrigation, and rural electrification, particularly in developing countries. With further cost reduction, they may be used to augment grid supplies in domestic, commercial, institutional, and industrial premises. Cost reduction to the stage where photovoltaics becomes economic for large-scale power generation in central stations depends on a technological breakthrough in the development of thin-film cells. DOE aims to reach this goal by 1990, so that by the end of the century about 20% of the estimated annual additions to their electrical generating capacity will be photovoltaic.

  12. Design of a high efficiency ultrathin CdS/CdTe solar cell using back surface field and backside distributed Bragg reflector.

    Science.gov (United States)

    Khosroabadi, Saeed; Keshmiri, Seyyed Hossein

    2014-05-01

    A high efficiency CdS/CdTe solar cell was designed with a reduced CdTe absorber-layer thickness and a distributed Bragg reflector (DBR) as an optical reflector and a ZnTe layer as back surface field (BSF) layer. Simulation results showed that with combination of DBR and BSF layers and 0.3 µm thick CdTe, the conversion efficiency was increased about 3.2% as compared with a reference cell (with 4 µm thick CdTe layer). It was also shown that the efficiency can be increased up to 6.02% by using a long carrier lifetime in the absorber layer. Under global AM 1.5G conditions, the proposed cell structure had an open-circuit voltage of 1.062 V, a short-circuit current density of 24.64 mA/cm², and a fill factor of 81.3%, corresponding to a total area conversion efficiency of 21.02%. PMID:24922397

  13. Concepts for thin-film GaAs concentrator cells. [for solar photovoltaic space power systems

    Science.gov (United States)

    Spitzer, M. B.; Gale, R. P.; Mcclelland, R.; King, B.; Dingle, J.

    1989-01-01

    The development of advanced GaAs concentrator solar cells, and in particular, the use of CLEFT (cleavage of lateral epitaxial films for transfer) processes for formation of thin-film structures is reported. The use of CLEFT has made possible processing of the back, and cells with back surface grids are discussed. Data on patterned junction development are presented; such junctions are expected to be useful in back surface applications requiring point contacts, grating structures, and interdigitated back contacts. CLEFT concentrator solar cells with grids on the front and back surfaces are reported here; these cells are 4 microns thick and are bonded to glass covers for support. Air mass zero efficiency of 18.8 percent has been obtained for a CLEFT concentrator operating at 18.5 suns.

  14. Design requirements for high-efficiency high concentration ratio space solar cells

    Science.gov (United States)

    Rauschenbach, H.; Patterson, R.

    1980-01-01

    A miniaturized Cassegrainian concentrator system concept was developed for low cost, multikilowatt space solar arrays. The system imposes some requirements on solar cells which are new and different from those imposed for conventional applications. The solar cells require a circular active area of approximately 4 mm in diameter. High reliability contacts are required on both front and back surfaces. The back area must be metallurgically bonded to a heat sink. The cell should be designed to achieve the highest practical efficiency at 100 AMO suns and at 80 C. The cell design must minimize losses due to nonuniform illumination intensity and nonnormal light incidence. The primary radiation concern is the omnidirectional proton environment.

  15. Results from Coupled Optical and Electrical Sentaurus TCAD Models of a Gallium Phosphide on Silicon Electron Carrier Selective Contact Solar Cell

    Energy Technology Data Exchange (ETDEWEB)

    Limpert, Steven; Ghosh, Kunal; Wagner, Hannes; Bowden, Stuart; Honsberg, Christiana; Goodnick, Stephen; Bremner, Stephen; Green, Martin

    2014-06-09

    We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell. Detailed analyses of current and voltage performance are presented for devices having substrate thicknesses of 10 μm, 50 μm, 100 μm and 150 μm, and with GaP/Si interfacial quality ranging from very poor to excellent. Ultimate potential performance was investigated using optical absorption profiles consistent with light trapping schemes of random pyramids with attached and detached rear reflector, and planar with an attached rear reflector. Results indicate Auger-limited open-circuit voltages up to 787 mV and efficiencies up to 26.7% may be possible for front-contacted devices.

  16. Improving low pressure chemical vapor deposited zinc oxide contacts for thin film silicon solar cells by using rough glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Steinhauser, J., E-mail: jerome.steinhauser@oerlikon.com; Boucher, J.-F.; Omnes, E.; Borrello, D.; Vallat-Sauvain, E.; Monteduro, G.; Marmelo, M.; Orhan, J.-B.; Wolf, B.; Bailat, J.; Benagli, S.; Meier, J.; Kroll, U.

    2011-12-01

    Compared to zinc oxide grown (ZnO) on flat glass, rough etched glass substrates decrease the sheet resistance (R{sub sq}) of zinc oxide layers grown on it. We explain this R{sub sq} reduction from a higher thickness and an improved electron mobility for ZnO layers deposited on rough etched glass substrates. When using this etched glass substrate, we also obtain a large variety of surface texture by changing the thickness of the ZnO layer grown on it. This new combination of etched glass and ZnO layer shows improved light trapping potential compared to ZnO films grown on flat glass. With this new approach, Micromorph thin film silicon tandem solar cells with high total current densities (sum of the top and bottom cell current density) of up to 26.8 mA cm{sup -2} were fabricated.

  17. Influence of n-doped μc-Si:H back surface field layer with micro growth in crystalline-amorphous silicon heterojunction solar cells.

    Science.gov (United States)

    Kim, Sangho; Dao, Vinh Ai; Shin, Chonghoon; Balaji, Nagarajan; Yi, Junsin

    2014-12-01

    The back surface field (BSF) plays an important role for the efficiency of the heterojunction intrinsic thin-film (HIT) solar cell. In this paper, the effect of thickness variation in n-type micro crystalline BSF layer was investigated by Raman and spectroscopy ellipsometry. As we increase the crystalline volume fraction (X(c)) from 6% to 59%, the open circuit voltage (V(oc)) increases from 573 to 696 mV with increase in fill factor from 59% to 71%. However, we observed that V(oc) and FF are decreased over 59% X(c) of n-type μc-Si:H BSF layer. It seems that higher X(c) micro layer include lots of defects. The quantum efficiency (QE) measurements were demonstrated on optimized thickness of n-doped micro BSF layer. In the long wavelengths region, the QE slightly increases with increasing the n-type μc-Si:H BSF layer thickness from 10 to 40 nm because of BSF effect, whereas the QE decreases when n-type μc-Si:H BSF layer thickness increases from 40 to 120 nm due to defects in the layer. The performance of heterojunction solar cell device was improved with the optimized thickness on n-doped micro BSF layer the best photo voltage parameters of the device were found to be V(oc) of 696 mV, short-circuit current density of 36.09 mA/cm2 and efficiency of 18.06% at n-doped micro BSF layer thickness of 40 nm. PMID:25971047

  18. Efficiency enhancement in dye sensitized solar cells using dual function mesoporous silica as scatterer and back recombination inhibitor

    Science.gov (United States)

    Tanvi; Mahajan, Aman; Bedi, R. K.; Kumar, Subodh; Saxena, Vibha; Aswal, D. K.

    2016-08-01

    In the present work, we report the usage of mesoporous silica for improving light harvesting as well as for suppression of back recombination without affecting the extent of dye loading on TiO2 films. Synthesized mesoporous SiO2 was characterized by X-ray photoelectron spectroscopy, X-ray diffraction, Brunauer Emmett and Teller measurement, Scanning electron microscopy and Transmission electron microscopy. DSSCs were fabricated by incorporating different wt% of mesoporous SiO2 in TiO2 paste. An improvement of 50% was observed for devices fabricated using 0.75 wt% of mesoporous SiO2. The mechanism behind the improvement was investigated using electrochemical impedance spectroscopy and UV-Vis spectroscopy.

  19. Impact of built-in fields and contact configuration on the characteristics of ultra-thin GaAs solar cells

    Science.gov (United States)

    Aeberhard, Urs

    2016-07-01

    We discuss the effects of built-in fields and contact configuration on the photovoltaic characteristics of ultra-thin GaAs solar cells. The investigation is based on advanced quantum-kinetic simulations reaching beyond the standard semi-classical bulk picture concerning the consideration of charge carrier states and dynamics in complex potential profiles. The thickness dependence of dark and photocurrent in the ultra-scaled regime is related to the corresponding variation of both, the built-in electric fields and associated modification of the density of states, and the optical intensity in the films. Losses in open-circuit voltage and short-circuit current due to the leakage of electronically and optically injected carriers at minority carrier contacts are investigated for different contact configurations including electron and hole blocking barrier layers. The microscopic picture of leakage currents is connected to the effect of finite surface recombination velocities in the semi-classical description, and the impact of these non-classical contact regions on carrier generation and extraction is analyzed.

  20. Spectroscopic ellipsometry studies of In2S3 top window and Mo back contacts in chalcopyrite photovoltaics technology

    International Nuclear Information System (INIS)

    Spectroscopic ellipsometry (SE) was used to characterize the conventional back contact layer (Mo) as well as a novel top window layer (In2S3) for use in chalcopyrite photovoltaics technology. For the Mo back contact, in-situ SE measurements of thin films magnetron sputtered onto glass enabled determination of ε at different thicknesses during growth. The observed strong variations could be understood on the basis of a Drude relaxation time that varies with the Mo film thickness. For the In2S3 window layer, ex-situ SE measurements showed critical point structures at 2.77±0.08 eV, 4.92±0.005 eV, and 5.64±0.005 eV, as well as an absorption tail with an onset near 1.9 eV. A comparison of the solar cell performance in simulations using either In2S3 or conventional CdS revealed similar quantum efficiencies irrespective of the selected window layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Nanostructured Semiconductor Device Design in Solar Cells

    Science.gov (United States)

    Dang, Hongmei

    We demonstrate the use of embedded CdS nanowires in improving spectral transmission loss and the low mechanical and electrical robustness of planar CdS window layer and thus enhancing the quantum efficiency and the reliability of the CdS-CdTe solar cells. CdS nanowire window layer enables light transmission gain at 300nm-550nm. A nearly ideal spectral response of quantum efficiency at a wide spectrum range provides an evidence for improving light transmission in the window layer and enhancing absorption and carrier generation in absorber. Nanowire CdS/CdTe solar cells with Cu/graphite/silver paste as back contacts, on SnO2/ITO-soda lime glass substrates, yield the highest efficiency of 12% in nanostructured CdS-CdTe solar cells. Reliability is improved by approximately 3 times over the cells with the traditional planar CdS counterpart. Junction transport mechanisms are delineated for advancing the basic understanding of device physics at the interface. Our results prove the efficacy of this nanowire approach for enhancing the quantum efficiency and the reliability in windowabsorber type solar cells (CdS-CdTe, CdS-CIGS and CdS-CZTSSe etc) and other optoelectronic devices. We further introduce MoO3-x as a transparent, low barrier back contact. We design nanowire CdS-CdTe solar cells on flexible foils of metals in a superstrate device structure, which makes low-cost roll-to-roll manufacturing process feasible and greatly reduces the complexity of fabrication. The MoO3 layer reduces the valence band offset relative to the CdTe, and creates improved cell performance. Annealing as-deposited MoO3 in N 2 reduces series resistance from 9.98 O/cm2 to 7.72 O/cm2, and hence efficiency of the nanowire solar cell is improved from 9.9% to 11%, which efficiency comparable to efficiency of planar counterparts. When the nanowire solar cell is illuminated from MoO 3-x /Au side, it yields an efficiency of 8.7%. This reduction in efficiency is attributed to decrease in Jsc from 25.5m

  2. Contact cleaning of polymer film solar reflectors

    Science.gov (United States)

    Sansom, Christopher; Fernández-García, Aránzazu; Sutter, Florian; Almond, Heather; King, Peter

    2016-05-01

    This paper describes the accelerated ageing of polymer film reflecting surfaces under the conditions to be found during contact cleaning of Concentrating Solar Power (CSP) collectors in the presence of dust and sand particles. In these situations, contact cleaning using brushes and water is required to clean the reflecting surfaces. Whilst suitable for glass reflectors, this paper discusses the effects of existing cleaning processes on the optical and visual properties of polymer film surfaces, and then describes the development of a more benign but effective contact cleaning process for cleaning polymer reflectors. The effects of a range of cleaning brushes are discussed, with and without the presence of water, in the presence of sand and dust particles from selected representative locations. Reflectance measurements and visual inspection shows that a soft cleaning brush with a small amount of water can clean polymer film reflecting surfaces without inflicting surface damage or reducing specular reflectance.

  3. Amorphous silicon oxide layers for surface passivation and contacting of heterostructure solar cells of amorphous and crystalline silicon; Amorphe Siliziumoxidschichten zur Oberflaechenpassivierung und Kontaktierung von Heterostruktur-Solarzellen aus amorphen und kristallinem Silizium

    Energy Technology Data Exchange (ETDEWEB)

    Einsele, Florian

    2010-02-05

    films is dominated by the diffusion of atomic hydrogen being suitable for the saturation of interface defects. This shows in a distinct increase of the passivation quality of annealed films. The heterostructure back contact for solar cells on p-type c-Si consists of an undoped, full area passivation film, followed by a boron doped p-type contact layer. If highly doped, this layer generates a back surface field effect which decreases the recombination by reflecting minority charge carriers from the defect rich interface. An undoped passivation layer of a-Si:H improves the passivation by saturating interface defects. Effusion measurements on stacks of undoped and doped layers show an increase of the hydrogen diffusion in the undoped layer due to the presence of the doped layer. The doped layer shifts the Fermi level of the undoped layer towards the valence band edge. This shift increases the diffusion coefficient of hydrogen due to an effective reduction of the Si-H bond energy. As a consequence, the presence of the doped contact layer increases the mobility of atomic hydrogen in the passivation layer, with atomic hydrogen being necessary for the passivation of interface defects. The thickness of the passivation layer critically affects both the passivation and the electrical conductance of the back contact. Whereas the passivation quality steadily improves with increasing thickness, the conductance drops when exceeding a critical thickness in a range of 4 nm to 8 nm. Temperature dependent measurements yield a thermal activation of the conductance with an activation energy of E{sub A} {approx_equal} 0.5 eV, which is attributed to the valence band offset {Delta}E{sub V} between a-Si:H and c-Si. This high barrier requires a tunneling process for majority charge carriers and explains the abrupt decrease of conductance with increasing passivation layer thickness. Passivation layers of a-SiO{sub x}:H form a blocking junction on p-type c-Si, which is explained by an oxygen

  4. Development of thin wraparound junction silicon solar cells

    Science.gov (United States)

    Ho, F.; Iles, P. A.

    1981-01-01

    The state of the art technologies was applied to fabricate 50 micro thick 2x4 cm, coplanar back contact (CBC) solar cells with AMO efficiency above 12%. A requirement was that the cells have low solar absorptance. A wraparound junction (WAJ) with wraparound metallization was chosen. This WAJ approach avoided the need for very complex fixturing, especially during rotation of the cells for providing adequate contacts over dielectric edge layers. The contact adhesion to silicon was considered better than to an insulator. It is indicated that shunt resistance caused by poor WAJ diode quality, and series resistance from the WAJ contact, give good cell performance. The cells developed reached 14 percent AMO efficiency (at 25 C), with solar absorptance values of 0.73. Space/cell environmental tests were performed on these cells and the thin CSC cells performed well. The optimized design configuration and process sequence were used to make 50 deliverable CBC cells. These cells were all above 12 percent efficiency and had an average efficiency of -13 percent. Results of environmental tests (humidity-temperature, thermal shock, and contact adherence) are also given.

  5. Selective Interlayers and Contacts in Organic Photovoltaic Cells.

    Science.gov (United States)

    Ratcliff, Erin L; Zacher, Brian; Armstrong, Neal R

    2011-06-01

    Organic photovoltaic cells (OPVs) are promising solar electric energy conversion systems with impressive recent optimization of active layers. OPV optimization must now be accompanied by the development of new charge-selective contacts and interlayers. This Perspective considers the role of interface science in energy harvesting using OPVs, looking back at early photoelectrochemical (photogalvanic) energy conversion platforms, which suffered from a lack of charge carrier selectivity. We then examine recent platforms and the fundamental aspects of selective harvesting of holes and electrons at opposite contacts. For blended heterojunction OPVs, contact/interlayer design is especially critical because charge harvesting competes with recombination at these same contacts. New interlayer materials can modify contacts to both control work function and introduce selectivity and chemical compatibility with nonpolar active layers and add thermodynamic and kinetic selectivity to charge harvesting. We briefly discuss the surface and interface science required for the development of new interlayer materials and take a look ahead at the challenges yet to be faced in their optimization. PMID:26295432

  6. Point-contacting by localised dielectric breakdown: Characterisation of a metallisation technique for the rear surface of a solar cell

    International Nuclear Information System (INIS)

    Characterisation results are presented for ohmic contacts to passivated crystalline silicon, formed using the point-contacting by localised dielectric breakdown technique. Self aligned contact is made between the metal and heavily doped surface regions through an intrinsic a-Si:H passivation layer. Local doping is provided by a laser using a standard technique identical to that for selective emitter formation. Our results for gate metals of Au, Al, and Ti show that the technique does not rely on reactivity between the dielectric and the metal, excluding metal induced crystallisation from the contacting process. Diffusion of the gate metal into the dielectric is observed in transmission electron microscope images suggesting high temperatures are present locally during the breakdown process. The technique is equally applicable to contacting of n and p-type silicon, making it a potential alternative for ohmic contacting to silicon to passivated rear surfaces

  7. Point-contacting by localised dielectric breakdown: Characterisation of a metallisation technique for the rear surface of a solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Western, Ned J., E-mail: n.western@unsw.edu.au; Perez-Wurfl, Ivan; Wenham, Stuart R.; Bremner, Stephen P. [Photovoltaics Centre of Excellence, UNSW, Sydney NSW 2052 (Australia)

    2015-07-28

    Characterisation results are presented for ohmic contacts to passivated crystalline silicon, formed using the point-contacting by localised dielectric breakdown technique. Self aligned contact is made between the metal and heavily doped surface regions through an intrinsic a-Si:H passivation layer. Local doping is provided by a laser using a standard technique identical to that for selective emitter formation. Our results for gate metals of Au, Al, and Ti show that the technique does not rely on reactivity between the dielectric and the metal, excluding metal induced crystallisation from the contacting process. Diffusion of the gate metal into the dielectric is observed in transmission electron microscope images suggesting high temperatures are present locally during the breakdown process. The technique is equally applicable to contacting of n and p-type silicon, making it a potential alternative for ohmic contacting to silicon to passivated rear surfaces.

  8. Electromagnetic approach to ultrathin solar cell efficiencies

    OpenAIRE

    Niv, A.; Gharghi, M.; Abrams, Z. R.; Gladden, C.; Zhang, X.

    2011-01-01

    Current methods for evaluating solar cell efficiencies cannot be applied to extremely thin cells where phenomena from the realm of near field optics prevail. We overcome this problem by offering a rigorous electromagnetic calculation of solar cell efficiencies based on the fluctuation dissipation theorem. Our approach is demonstrated by calculating the efficiency of a GaAs solar cell with an Au back reflector for thicknesses well below the typical wavelength of the solar flux. It is shown tha...

  9. Effective plasma hydrogen passivation of mc-Si solar cells after finishing contacts%多晶硅太阳电池的有效等离子体氢钝化

    Institute of Scientific and Technical Information of China (English)

    胡志华; 刘祖明; 陈庭金; 廖显伯; 廖华

    2002-01-01

    A simple equipment and process for hydrogen passivation of multicrystalline silicon (mc-Si) solar cells are reported in this work. Hydrogen plasma is generated by means of AC glow discharge in hydrogen atmosphere. Hydrogen passivation is carried out with three different groups of mc-Si solar cells after finishing contacts. The experimental results demonstrate that the photovoltaic performances of the solar cell samples have been improved after hydrogen plasma treatment, with a relative increase in conversion efficiency up to 10.6%.

  10. Optical and Recombination Losses in Thin Film Solar Cells Based on Heterojunctions n-ZnS (n-CdS) / p-CdTe with Current Collecting Contacts ITO and ZnO

    OpenAIRE

    O.A. Dobrozhan; A.S. Opanasyuk; V.V. Grynenko

    2014-01-01

    The optical and recombination losses in auxiliary and absorbing layers of solar cells based on heterojunctions n-ZnS / p-CdTe and n-CdS / p-CdTe with current collecting front sublayers ITO and ZnO were determined. As a result, spectral dependence of light transmittance (T) of solar cells, taking into account its reflections from the boundaries of the contacting materials and in case of absorption in the auxiliary layers of solar cells was calculated. The influence of optical and recombination...

  11. Drain Back, Low Flow Solar Combi Systems

    DEFF Research Database (Denmark)

    Perers, Bengt; Furbo, Simon; Fan, Jianhua;

    2014-01-01

    Drain Back systems with ETC collectors are tested and analyzed in a Danish - Chinese cooperation project. Experiences from early work at DTU, with drain back, low flow systems, was used to design two systems: 1) One laboratory system at DTU and 2) One demonstration system in a single family house...

  12. Trap-Assisted Transport and Non-Uniform Charge Distribution in Sulfur-Rich PbS Colloidal Quantum Dot-based Solar Cells with Selective Contacts.

    Science.gov (United States)

    Malgras, Victor; Zhang, Guanran; Nattestad, Andrew; Clarke, Tracey M; Mozer, Attila J; Yamauchi, Yusuke; Kim, Jung Ho

    2015-12-01

    This study reports evidence of dispersive transport in planar PbS colloidal quantum dot heterojunction-based devices as well as the effect of incorporating a MoO3 hole selective layer on the charge extraction behavior. Steady state and transient characterization techniques are employed to determine the complex recombination processes involved in such devices. The addition of a selective contact drastically improves the device efficiency up to 3.15% (especially due to increased photocurrent and decreased series resistance) and extends the overall charge lifetime by suppressing the main first-order recombination pathway observed in device without MoO3. The lifetime and mobility calculated for our sulfur-rich PbS-based devices are similar to previously reported values in lead-rich quantum dots-based solar cells. Nevertheless, strong Shockley-Read-Hall mechanisms appear to keep restricting charge transport, as the equilibrium voltage takes more than 1 ms to be established. PMID:26541422

  13. Development of solar cells with back surface field made by aluminum paste and belt furnace diffusion; Desenvolvimento de celulas solares com campo retrodifusor formado por pasta de aluminio e difusao em forno de esteira

    Energy Technology Data Exchange (ETDEWEB)

    Marcolino, Juliane Bernardes

    2011-01-15

    Photovoltaics is based on the direct conversion of solar energy into electricity and is a promising alternative to diversify the world's energy matrix. This work aims to develop and analyse the deposition of Al paste by screen printing and firing/diffusion in a belt furnace to produce a BSF region in monocrystalline Si wafers. The diffusion of Al into the substrate was implemented by two different processes. In the first process the diffusion/firing of the Al paste and the firing of the Ag paste was carried out in independent steps. In this case, solar cells with an average efficiency ({eta}{sub average}) of 11.5 % and a maximum of 12.0 % were produced, but with the formation Al clusters in the back surface of the devices. In the second process firing/diffusion of such pastes was done on the same step. In this case, the best results were obtained for a firing/diffusion temperature of 860 deg C and belt furnace speed (V{sub E}) of 150 cm/min and also for 890 deg C and 180 cm/min. For the former parameters, {eta}{sub average} was 12.4 % and the maximum was 12.8 %. For the later, {eta}{sub average} was 12.5 % and the maximum was 12.6 %. Considering a temperature of 900 deg C and V{sub E} of 190 cm/min, {eta}{sub average} was 12.4 %. It was observed that minority carriers diffusion lengths were smaller than the thickness of silicon wafers. Open circuit voltages were 30 mV lower than that from similar cells fabricated at NT-Solar by using high purity Al deposited by e-beam evaporation indicating that the developed process produced low quality BSF. (author)

  14. High efficiency micro solar cells integrated with lens array

    Science.gov (United States)

    Fidaner, Onur; Suarez, Ferran A.; Wiemer, Michael; Sabnis, Vijit A.; Asano, Tetsuya; Itou, Akihiro; Inoue, Daijiro; Hayashi, Nobuhiko; Arase, Hidekazu; Matsushita, Akio; Nakagawa, Tohru

    2014-03-01

    We demonstrate high efficiency triple junction solar cells with submillimeter dimensions in an all-back-contact architecture. 550 × 550 μm2 cells flash at 41.3% efficiency under the air mass 1.5 direct normal spectrum at 50 W/cm2 at 25 °C. Compared to standard size production cells, the micro cells have reduced performance at 1-sun due to perimeter recombination, but the performance gap closes at higher concentrations. Micro cells integrated with lens arrays were tested on-sun with an efficiency of 34.7%. All-back-contact architecture and submillimeter dimensions are advantageous for module integration and heat dissipation, allowing for high-performance, compact, lightweight, and cost-effective concentrated photovoltaic modules.

  15. Effective hole extraction using MoO{sub x}-Al contact in perovskite CH{sub 3}NH{sub 3}PbI{sub 3} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yixin; Nardes, Alexandre M.; Zhu, Kai, E-mail: Kai.Zhu@nrel.gov [Chemical and Materials Science Center, National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2014-05-26

    We report an 11.4%-efficient perovskite CH{sub 3}NH{sub 3}PbI{sub 3} solar cell using low-cost molybdenum oxide/aluminum (i.e., MoO{sub x}/Al) as an alternative top contact to replace noble/precious metals (e.g., Au or Ag) for extracting photogenerated holes. The device performance of perovskite solar cells using a MoO{sub x}/Al top contact is comparable to that of cells using the standard Ag top contact. Analysis of impedance spectroscopy measurements suggests that using 10-nm-thick MoO{sub x} and Al does not affect charge-recombination properties of perovskite solar cells. Using a thicker (20-nm) MoO{sub x} layer leads to a lower cell performance caused mainly by a reduced fill factor. Our results suggest that MoO{sub x}/Al is promising as a low-cost and effective hole-extraction contact for perovskite solar cells.

  16. Quantum-Tuned Multijunction Solar Cells

    Science.gov (United States)

    Koleilat, Ghada I.

    Multijunction solar cells made from a combination of CQDs of differing sizes and thus bandgaps are a promising means by which to increase the energy harvested from the Sun's broad spectrum. In this dissertation, we first report the systematic engineering of 1.6 eV PbS CQD solar cells, optimal as the front cell responsible for visible wavelength harvesting in tandem photovoltaics. We rationally optimize each of the device's collecting electrodes---the heterointerface with electron accepting TiO2 and the deep-work-function hole-collecting MoO3 for ohmic contact---for maximum efficiency. Room-temperature processing enables flexible substrates, and permits tandem solar cells that integrate a small-bandgap back cell atop a low thermal-budget larger-bandgap front cell. We report an electrode strategy that enables a depleted heterojunction CQD PV device to be fabricated entirely at room temperature. We develop a two-layer donor-supply electrode (DSE) in which a highly doped, shallow work function layer supplies a high density of free electrons to an ultrathin TiO2 layer via charge-transfer doping. Using the DSE we build all-room-temperature-processed small-bandgap (1 eV) colloidal quantum dot solar cells suitable for use as the back junction in tandem solar cells. We further report in this work the first efficient CQD tandem solar cells. We use a graded recombination layer (GRL) to provide a progression of work functions from the hole-accepting electrode in the bottom cell to the electron-accepting electrode in the top cell. The recombination layers must allow the hole current from one cell to recombine, with high efficiency and low voltage loss, with the electron current from the next cell. We conclude our dissertation by presenting the generalized conditions for design of efficient graded recombination layer solar devices. We demonstrate a family of new GRL designs experimentally and highlight the benefits of the progression of dopings and work functions in the

  17. High temperature annealing of sprayed SnO{sub 2}: F layers in a silicon solar cell process with screen-printed contacts

    Energy Technology Data Exchange (ETDEWEB)

    Tala-Ighil, R.; Boumaour, M.; Maallemi, A.; Melhani, K. [Laboratoire des Cellules Photovoltaiques, Unite de Developpement de la Technologie du Silicium ? UDTS, 2 Bd, F. Fanon, BP 399 Alger-Gare, Alger (Algerie); Belkaid, M.S. [Laboratoire de Microelectronique Appliquee, Universite Mouloud Mammeri, BP 453 Tizi-Ouzou (Algerie); Iratni, A. [Laboratoire des mineraux et materiaux composites, LMMC, Universite Mhamed Bougerra, Avenue de l' independance, 35000 Boumerdes (Algerie)

    2006-07-24

    In order to improve the solar cell conversion efficiency, a thin film of doped tin oxide (SnO{sub 2}: F) has been deposited by the spray-pyrolysis technique on a monocrystalline diffused silicon wafer. Subsequently, the layer must undergo the firing step of screen-printed contacts with temperatures up to 830{sup o}C. After annealing, one notices with the naked eye the appearance of speckles disturbing the uniformity of the as-deposited blue-coloured SnO{sub 2}:F. Characterizations such as XPS, FTIR, RBS, XRD, SEM, Hall Effect, four point probe...etc, are all consistent to reveal a net increase of the SnO{sub 2}:F layer resistivity which leads to efficiency degradation. Annealing the thin films under CO and 90% N{sub 2}-10% H{sub 2} atmospheres was investigated to seek possibilities to preserve the expected improvements. Unlike forming gas, CO reducing ambient was found to be very effective for the high temperature contact firing with no thin film conductivity deterioration. (author)

  18. Optimization of the Energy Level Alignment between the Photoactive Layer and the Cathode Contact Utilizing Solution-Processed Hafnium Acetylacetonate as Buffer Layer for Efficient Polymer Solar Cells.

    Science.gov (United States)

    Yu, Lu; Li, Qiuxiang; Shi, Zhenzhen; Liu, Hao; Wang, Yaping; Wang, Fuzhi; Zhang, Bing; Dai, Songyuan; Lin, Jun; Tan, Zhan'ao

    2016-01-13

    The insertion of an appropriate interfacial buffer layer between the photoactive layer and the contact electrodes makes a great impact on the performance of polymer solar cells (PSCs). Ideal interfacial buffer layers could minimize the interfacial traps and the interfacial barriers caused by the incompatibility between the photoactive layer and the electrodes. In this work, we utilized solution-processed hafnium(IV) acetylacetonate (Hf(acac)4) as an effective cathode buffer layer (CBL) in PSCs to optimize the energy level alignment between the photoactive layer and the cathode contact, with the short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) all simultaneously improved with Hf(acac)4 CBL, leading to enhanced power conversion efficiencies (PCEs). Ultraviolet photoemission spectroscopy (UPS) and scanning Kelvin probe microscopy (SKPM) were performed to confirm that the interfacial dipoles were formed with the same orientation direction as the built-in potential between the photoactive layer and Hf(acac)4 CBL, benefiting the exciton separation and electron transport/extraction. In addition, the optical characteristics and surface morphology of the Hf(acac)4 CBL were also investigated.

  19. Three-Terminal Amorphous Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Hung Tai

    2011-01-01

    Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

  20. Characteristics of in-substituted CZTS thin film and bifacial solar cell.

    Science.gov (United States)

    Ge, Jie; Chu, Junhao; Jiang, Jinchun; Yan, Yanfa; Yang, Pingxiong

    2014-12-10

    Implementing bifacial photovoltaic devices based on transparent conducting oxides (TCO) as the front and back contacts is highly appealing to improve the efficiency of kesterite solar cells. The p-type In substituted Cu2ZnSnS4 (CZTIS) thin-film solar cell absorber has been fabricated on ITO glass by sulfurizing coelectroplated Cu-Zn-Sn-S precursors in H2S (5 vol %) atmosphere at 520 °C for 30 min. Experimental proof, including X-ray diffraction, Raman spectroscopy, UV-vis-NIR transmission/reflection spectra, PL spectra, and electron microscopies, is presented for the interfacial reaction between the ITO back contact and CZTS absorber. This aggressive reaction due to thermal processing contributes to substitutional diffusion of In into CZTS, formation of secondary phases and electrically conductive degradation of ITO back contact. The structural, lattice vibrational, optical absorption, and defective properties of the CZTIS alloy absorber layer have been analyzed and discussed. The new dopant In is desirably capable of improving the open circuit voltage deficit of kesterite device. However, the nonohmic back contact in the bifacial device negatively limits the open circuit voltage and fill factor, evidencing by illumination-/temperature-dependent J-V and frequency-dependent capacitance-voltage (C-V-f) measurements. A 3.4% efficient solar cell is demonstrated under simultaneously bifacial illumination from both sides of TCO front and back contacts. PMID:25340540

  1. Three-Terminal Amorphous Silicon Solar Cells

    OpenAIRE

    Cheng-Hung Tai; Chu-Hsuan Lin; Chih-Ming Wang; Chun-Chieh Lin

    2011-01-01

    Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si...

  2. Approaches to improve the Voc of CDTE devices: Device modeling and thinner devices, alternative back contacts

    Science.gov (United States)

    Walkons, Curtis J.

    An existing commercial process to develop thin film CdTe superstrate cells with a lifetime tau=1-3 ns results in Voc= 810-850 mV which is 350 mV lower than expected for CdTe with a bandgap EG = 1.5 eV. Voc is limited by 1.) SRH recombination in the space charge region; and 2.) the Cu2Te back contact to CdTe, which, assuming a 0.3 eV CdTe/Cu2Te barrier, exhibits a work function of phi Cu2Te= 5.5 eV compared to the CdTe valence band of Ev,CdTe=5.8 eV. Proposed solutions to develop CdTe devices with increased Voc are: 1.) reduce SRH recombination by thinning the CdTe layer to ≤ 1 mum; and 2.) develop an ohmic contact back contact using a material with phi BC≥5.8 eV. This is consistent with simulations using 1DSCAPS modeling of CdTe/CdS superstrate cells under AM 1.5 conditions. Two types of CdTe devices are presented. The first type of CdTe device utilizes a window/CdTe stack device with an initial 3-9 mum CdTe layer which is then chemically thinned resulting in regions of the CdTe film with thickness less than 1 mum. The CdTe surface was contacted with a liquid junction quinhydrone-Pt (QH-Pt) probe which enables rapid repeatable Voc measurements on CdTe before and after thinning. In four separate experiments, the window/CdTe stack devices with thinned CdTe exhibited a Voc increase of 30-170 mV, which if implemented using a solid state contact could cut the Voc deficit in half. The second type of CdTe device utilizes C61 PCBM as a back contact to the CdTe, selected since PCBM has a valence band maximum energy (VBM) of 5.8 eV. The PCBM films were grown by two different chemistries and the characterization of the film properties and device results are discussed. The device results show that PCBM exhibits a blocking contact with a 0.6 eV Schottky barrier and possible work function of phiPCBM = 5.2 eV.

  3. Study on the sintering and contact formation process of silver front side metallization pastes for crystalline silicon solar cells

    Science.gov (United States)

    Qin, Jun; Zhang, Weijun; Bai, Shuxin; Liu, Zhuofeng

    2016-07-01

    In the paper, sintering process and contact formation process of PTO glass containing pastes were studied by interrupting the firings at different temperatures. Microstructures of contact fingers fabricated using pastes with PTO glass by interrupted firings were obtained by FIB/SEM technology and the sintering process of pastes was studied. The sintering process of pastes can be divided into three stages, the initial stage, intermediate stage and final stage, respectively. Only during the initial stage and intermediate stage of sintering, Ag-containing glass-phase is able to flow downward to the interface of Ag/Si through the continuous pore channels between Ag particles due to the great densification of Ag in the final stage of sintering. The great disharmony between the flow process of glass-phase and Ag densification would cause much glass trapped in densified Ag and thereby non-uniform etching of Si wafers. Contact formation process of pastes was studied by observing the Ag contact and Si emitter interface. Ag precipitates can be observed in the interfacial glass-phase at low firing temperature. Ag crystallites embedded in Si emitter appear at relative high temperature, along with the decreased number of Ag precipitates located in the interfacial glass-phase. Lower viscosity and higher ion diffusion velocities of interfacial glass-phase will make Ag crystallites appear at lower temperature. The increased interfacial glass layer thickness and abnormal growth of Ag crystallites, together with the decreased number of Ag precipitates cause the increase of contact resistance with the increase of sintering temperature.

  4. Cu(In,Ga)Se{sub 2} solar cells with superstrate structure using lift-off process

    Energy Technology Data Exchange (ETDEWEB)

    Osada, Shintaro; Anegawa, Takaya; Takakura, Hideyuki [College of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu 525-8577 (Japan); Abe, Yasuhiro; Minemoto, Takashi [Ritsumeikan Global Innovation Research Organization, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu 525-8577 (Japan)

    2011-01-15

    Cu(In,Ga)Se{sub 2} (CIGS) solar cells with a superstrate structure were fabricated using a lift-off process. To widen the variety of substrate choices for CIGS solar cells, a lift-off process was developed without an intentional sacrificial layer between the CIGS and Mo back-contact layers. The CIGS solar cells fabricated on Mo/soda-lime glass (SLG) were transferred to an alternative SLG substrate. The conversion efficiency of the CIGS solar cells with the superstrate structure was 5.1%, which was almost half that of the CIGS solar cells with a substrate structure prior to the lift-off process. The low conversion efficiency was caused by the high series resistance and low shunt resistance, which would be due to the junction resistance between the CIGS/back contact and cracks introduced during the lift-off process, respectively. (author)

  5. Reduction Bending of Thin Crystalline Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    SHEN Lan-xian; LIU Zu-ming; LIAO Hua; TU Jie-lei; DENG Shu-kang

    2009-01-01

    Reported are the results of reduction the bending of thin crystalline silicon solar ceils after printing and sintering of back electrode by changing the back electrode paste and adjusting the screen printing parameters without effecting the electrical properties of the cell. Theory and experiments showed that the bending of the cell is changed with its thickness of suhstrate, the thinner cell, the more serious bending. The bending of the cell is decreased with the thickness decrease of the back contact paste. The substrate with the thickness of 190μm printing with sheet aluminum paste shows a relatively lower bend compared with that of the substrate printing with ordinary aluminum paste, and the minimum bend is 0.55 mm which is reduced by52%.

  6. Development of a Thin-Film Solar Cell Interconnect for the Powersphere Concept

    Science.gov (United States)

    Simburger, Edward J.; Matsumoto, James H.; Giants, Thomas W.; Garcia, Alexander, III; Liu, Simon; Rawal, Suraj P.; Perry, Alan R.; Marshall, Craig; Lin, John K.; Scarborough, Stephen E.

    2005-01-01

    Dual junction amorphous silicon (a-Si) solar cells produced on polyimide substrate have been selected as the best candidate to produce a lightweight solar array for the PowerSphere program. The PowerSphere concept features a space-inflatable, geodetic solar array approximately 0.6 meters in diameter and capable of generating about 20W of electrical power. Trade studies of various wiring concepts and connection methods led to an interconnect design with a copper contact that wraps around the edge, to the back of the solar cell. Applying Plasma Vapor Deposited (PVD) copper film to both sides and the edge of the solar cell produces the wrap around contact. This procedure results in a contact pad on the back of the solar cell, which is then laser welded to a flex circuit material. The flex circuit is constructed of copper in a custom designed routing pattern, and then sandwiched in a Kapton insulation layer. The flex circuit then serves as the primary power distribution system between the solar cells and the spacecraft. Flex circuit material is the best candidate for the wiring harness because it allows for low force deployment of the solar cells by the inflatable hinges on the PowerSphere. An additional frame structure, fabricated and assembled by ILC Dover, will reinforce the wrap around contact-flex blanket connection, thus providing a mechanically robust solar cell interconnect for the PowerSphere multifunctional program. The PowerSphere team will use the wraparound contact design approach as the primary solution for solar cell integration and the flex blanket for power distribution.

  7. Work Station For Inverting Solar Cells

    Science.gov (United States)

    Feder, H.; Frasch, W.

    1982-01-01

    Final work station along walking-beam conveyor of solar-array assembly line turns each pretabbed solar cell over, depositing it back-side-up onto landing pad, which centers cell without engaging collector surface. Solar cell arrives at inverting work station collector-side-up with two interconnect tabs attached to collector side. Cells are inverted so that second soldering operation takes place in plain view of operator. Inversion protects collector from damage when handled at later stages of assembly.

  8. High-efficiency silicon heterojunction solar cells: Status and perspectives

    Energy Technology Data Exchange (ETDEWEB)

    De Wolf, S.; Geissbuehler, J.; Loper, P.; Martin de Nicholas, S.; Seif, J.; Tomasi, A.; Ballif, C.

    2015-05-11

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on both-sides contacted n-type cells, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short-wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long- wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metallization grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical

  9. Analysis of Cu Diffusion in ZnTe-Based Contacts for Thin-Film CdS/CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Narayanswamy, C. (Department of Physics & Astronomy, University of Toledo); Gessert, T. A. and Asher, S. E. (National Renewable Energy Laboratory)

    1998-10-27

    Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Ni metallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100 C to 300 C. Cu depletion is not observed when Ni is replaced with Ti. Diffusion of Cu from the ZnTe:Cu layer into the ZnTe layer also increases with contact deposition temperature, and produces a buildup of Cu at the ZnTe/CdTe interface. High-mass resolution SIMS indicates that, although Cu levels in the CdTe remain low, Cu diffusion from the contact proceeds into the CdTe layer and toward the CdTe/CdS junction region.

  10. Prospects of Back Surface Field Effect in Ultra-Thin High-Efficiency CdS/CdTe Solar Cells from Numerical Modeling

    OpenAIRE

    Nowshad Amin; M. A. Matin; Aliyu, M. M.; Alghoul, M. A.; M. R. Karim; K. Sopian

    2010-01-01

    Polycrystalline CdTe shows greater promises for the development of cost-effective, efficient, and reliable thin film solar cells. Results of numerical analysis using AMPS-1D simulator in exploring the possibility of ultrathin, high efficiency, and stable CdS/CdTe cells are presented. The conventional baseline case structure of CdS/CdTe cell has been explored with reduced CdTe absorber and CdS window layer thickness, where 1 μm thin CdTe and 50 nm CdS layers showed reasonable efficiencies over...

  11. Towards upconversion for amorphous silicon solar cells

    NARCIS (Netherlands)

    de Wild, J.; Meijerink, A.; Rath, J.K.; van Sark, W.G.J.H.M.; Schropp, R.E.I.

    2010-01-01

    Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR–vis upconverter β-NaYF4:Yb3+(18%) Er3+(2%) at the back of an amorphous silicon solar cell in com

  12. Novel approach for characterizing the specific shunt resistance caused by the penetration of the front contact through the p-n junction in solar cell

    Institute of Scientific and Technical Information of China (English)

    Zhang Lucheng; Shen Hui

    2009-01-01

    on process was completely compatible with the industrial silicon fabrication sequence, which was of great convenience. The measurement results give informations on the solar cell structure, material ingredients, and process parameters.

  13. Rational Strategies for Efficient Perovskite Solar Cells.

    Science.gov (United States)

    Seo, Jangwon; Noh, Jun Hong; Seok, Sang Il

    2016-03-15

    A long-standing dream in the large scale application of solar energy conversion is the fabrication of solar cells with high-efficiency and long-term stability at low cost. The realization of such practical goals depends on the architecture, process and key materials because solar cells are typically constructed from multilayer heterostructures of light harvesters, with electron and hole transporting layers as a major component. Recently, inorganic-organic hybrid lead halide perovskites have attracted significant attention as light absorbers for the fabrication of low-cost and high-efficiency solar cells via a solution process. This mainly stems from long-range ambipolar charge transport properties, low exciton binding energies, and suitable band gap tuning by managing the chemical composition. In our pioneering work, a new photovoltaic platform for efficient perovskite solar cells (PSCs) was proposed, which yielded a high power conversion efficiency (PCE) of 12%. The platform consisted of a pillared architecture of a three-dimensional nanocomposite of perovskites fully infiltrating mesoporous TiO2, resulting in the formation of continuous phases and perovskite domains overlaid with a polymeric hole conductor. Since then, the PCE of our PSCs has been rapidly increased from 3% to over 20% certified efficiency. The unprecedented increase in the PCE can be attributed to the effective integration of the advantageous attributes of the refined bicontinuous architecture, deposition process, and composition of perovskite materials. Specifically, the bicontinuous architectures used in the high efficiency comprise a layer of perovskite sandwiched between mesoporous metal-oxide layer, which is a very thinner than that of used in conventional dye-sensitized solar cells, and hole-conducting contact materials with a metal back contact. The mesoporous scaffold can affect the hysteresis under different scan direction in measurements of PSCs. The hysteresis also greatly depends on

  14. Optical and Recombination Losses in Thin Film Solar Cells Based on Heterojunctions n-ZnS (n-CdS / p-CdTe with Current Collecting Contacts ITO and ZnO

    Directory of Open Access Journals (Sweden)

    O.A. Dobrozhan

    2014-11-01

    Full Text Available The optical and recombination losses in auxiliary and absorbing layers of solar cells based on heterojunctions n-ZnS / p-CdTe and n-CdS / p-CdTe with current collecting front sublayers ITO and ZnO were determined. As a result, spectral dependence of light transmittance (T of solar cells, taking into account its reflections from the boundaries of the contacting materials and in case of absorption in the auxiliary layers of solar cells was calculated. The influence of optical and recombination losses in the solar cell structure ITO (ZnO / CdS (ZnS / CdTe on the short circuit current (Jsc and efficiency (η of solar cells with different thickness of the window layer CdS (ZnS (50-300 nm and constant current collecting layer (200 nm was investigated. It has been established that the greatest efficiency values (15,9-16,1% solar cells have the structure of ZnO / ZnS / CdTe at a concentration of uncompensated acceptors in the absorbent layer (Na – Nd = 1015-1017 cm – 3 and the window layer thickness of 50 nm.

  15. Fabricating solar cells with silicon nanoparticles

    Science.gov (United States)

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  16. Overview of thick-film technology as applied to solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Firor, K.; Hogan, S.

    1980-01-01

    Thick-film technology was developed by the electronics industry as a means of fabricating components and miniature circuitry. Today, the solar cell industry is looking at screen printing as an alternate to more expensive, high-vacuum techniques in several of the production steps during the manufacture of silicon solar cells. Screen printing is already fairly well established as a means of providing electrical contact to a cell and for the formation of a back surface field. Now under investigation are the possibilities of non-noble metal contacts and protective and antireflective coatings applied to solar cells by the use of screen printing. Most exciting is the work being done in the non-silicon area on the fabrication of the active layers of a solar cell, using thick-film inks made up of II-VI semiconductors.

  17. Role of a disperse carbon interlayer on the performances of tandem a-Si solar cells

    Directory of Open Access Journals (Sweden)

    Andreia Araújo, Raquel Barros, Tiago Mateus, Diana Gaspar, Nuno Neves, António Vicente, Sergej A Filonovich, Pedro Barquinha, Elvira Fortunato, Ana M Ferraria, Ana M Botelho do Rego, Ana Bicho, Hugo Águas and Rodrigo Martins

    2013-01-01

    Full Text Available We report the effect of a disperse carbon interlayer between the n-a-Si:H layer and an aluminium zinc oxide (AZO back contact on the performance of amorphous silicon solar cells. Carbon was incorporated to the AZO film as revealed by x-ray photoelectron spectroscopy and energy-dispersive x-ray analysis. Solar cells fabricated on glass substrates using AZO in the back contact performed better when a disperse carbon interlayer was present in their structure. They exhibited an initial efficiency of 11%, open-circuit voltage Voc = 1.6 V, short-circuit current JSC = 11 mA cm−2 and a filling factor of 63%, that is, a 10% increase in the JSC and 20% increase in the efficiency compared to a standard solar cell.

  18. Nanostructured Organic Solar Cells

    DEFF Research Database (Denmark)

    Radziwon, Michal Jędrzej; Rubahn, Horst-Günter; Madsen, Morten

    Recent forecasts for alternative energy generation predict emerging importance of supporting state of art photovoltaic solar cells with their organic equivalents. Despite their significantly lower efficiency, number of application niches are suitable for organic solar cells. This work reveals...... the principles of bulk heterojunction organic solar cells fabrication as well as summarises major differences in physics of their operation....

  19. Solar Photovoltaic Cells.

    Science.gov (United States)

    Mickey, Charles D.

    1981-01-01

    Reviews information on solar radiation as an energy source. Discusses these topics: the key photovoltaic material; the bank theory of solids; conductors, semiconductors, and insulators; impurity semiconductors; solid-state photovoltaic cell operation; limitations on solar cell efficiency; silicon solar cells; cadmium sulfide/copper (I) sulfide…

  20. High-efficiency silicon heterojunction solar cells: Status and perspectives

    Energy Technology Data Exchange (ETDEWEB)

    De Wolf, S.

    2015-04-27

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on n-type wafers, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short- wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long-wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metalisation grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The

  1. PEROVSKITE SOLAR CELLS (REVIEW ARTICLE)

    OpenAIRE

    Benli, Deniz Ahmet

    2015-01-01

    A solar cell is a device that converts sunlight into electricity. There are different types of solar cells but this report mainly focuses on a type of new generation solar cell that has the name organo-metal halide perovskite, shortly perovskite solar cells. In this respect, the efficiency of power conversion is taken into account to replace the dominancy of traditional and second generation solar cell fields by perovskite solar cells. Perovskite solar cell is a type of solar cell including a...

  2. Solar cell concentrating system

    International Nuclear Information System (INIS)

    This study reviews fabrication techniques and testing facilities for different solar cells under concentration which have been developed and tested. It is also aimed to examine solar energy concentrators which are prospective candidates for photovoltaic concentrator systems. This may provide an impetus to the scientists working in the area of solar cell technology

  3. Electron-beam-induced current at absorber back surfaces of Cu(In,Ga)Se{sub 2} thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kavalakkatt, J.; Abou-Ras, D., E-mail: daniel.abou-ras@helmholtz-berlin.de; Nichterwitz, M.; Caballero, R.; Rissom, T.; Unold, T.; Scheer, R.; Schock, H. W. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz. 1, 14109 Berlin (Germany); Haarstrich, J.; Ronning, C. [Institut für Festkörperphysik, Friedrich Schiller Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany)

    2014-01-07

    The present work reports on investigations of the influence of the microstructure on electronic properties of Cu(In,Ga)Se{sub 2} (CIGSe) thin-film solar cells. For this purpose, ZnO/CdS/CIGSe stacks of these solar cells were lifted off the Mo-coated glass substrates. The exposed CIGSe backsides of these stacks were investigated by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements as well as by electron backscattered diffraction (EBSD). EBIC and CL profiles across grain boundaries (GBs), which were identified by EBSD, do not show any significant changes at Σ3 GBs. Across non-Σ3 GBs, on the other hand, the CL signals exhibit local minima with varying peak values, while by means of EBIC, decreased and also increased short-circuit current values are measured. Overall, EBIC and CL signals change across non-Σ3 GBs always differently. This complex situation was found in various CIGSe thin films with different [Ga]/([In]+[Ga]) and [Cu]/([In]+[Ga]) ratios. A part of the EBIC profiles exhibiting reduced signals across non-Σ3 GBs can be approximated by a simple model based on diffusion of generated charge carriers to the GBs.

  4. Infrared-Controlled Welding of Solar Cells

    Science.gov (United States)

    Paulson, R.; Finnell, S. E.; Decker, H. J.; Hodor, J. R.

    1982-01-01

    Proposed apparatus for welding large arrays of solar cells to flexible circuit substrates would sense infrared emission from welding spot. Emission would provide feedback for control of welding heat. Welding platform containing optical fibers moves upward through slots in movable holding fixture to contact solar cells. Fibers pick up infrared radiation from weld area.

  5. Screen Printed Metallization of Silicon Solar Cells

    OpenAIRE

    Govaerts, R.; Van Overstraeten, R.; Mertens, R.; Ph. Lauwers; Frisson, L.

    1980-01-01

    This paper presents a screen printing process for the metallization of silicon solar cells. The physics and construction of a classical solar cell are reviewed. The results obtained with a screen printing process are comparable with other, more expensive technologies. This technology does not introduce an additional contact resistance on silicon. The process optimization and the influence of different parameters are discussed.

  6. Suns-VOC characteristics of high performance kesterite solar cells

    Science.gov (United States)

    Gunawan, Oki; Gokmen, Tayfun; Mitzi, David B.

    2014-08-01

    Low open circuit voltage (VOC) has been recognized as the number one problem in the current generation of Cu2ZnSn(Se,S)4 (CZTSSe) solar cells. We report high light intensity and low temperature Suns-VOC measurement in high performance CZTSSe devices. The Suns-VOC curves exhibit bending at high light intensity, which points to several prospective VOC limiting mechanisms that could impact the VOC, even at 1 sun for lower performing samples. These VOC limiting mechanisms include low bulk conductivity (because of low hole density or low mobility), bulk or interface defects, including tail states, and a non-ohmic back contact for low carrier density CZTSSe. The non-ohmic back contact problem can be detected by Suns-VOC measurements with different monochromatic illuminations. These limiting factors may also contribute to an artificially lower JSC-VOC diode ideality factor.

  7. Industrial Silicon Wafer Solar Cells

    Directory of Open Access Journals (Sweden)

    Dirk-Holger Neuhaus

    2007-01-01

    Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

  8. Tunnel junctions for InP-on-Si solar cells

    Science.gov (United States)

    Keavney, C.; Vernon, S.; Haven, V.

    1991-01-01

    Growing, by metalorganic chemical vapor deposition, a tunnel junction is described, which makes possible and ohmic back contact in an n-on-p InP solar cell on a silicon substrate. The junction between heavily doped layers of p-type InGaAs and n-type InP shows resistance low enough not to affect the performance of these cells. InP solar cells made on n-type Si substrates with this structure were measured with an efficiency of 9.9 percent. Controls using p-type GaAs substrates showed no significant difference in cell performance, indicating that the resistance associated with the tunnel junction is less than about 0.1 ohm/sq cm.

  9. Physics and technology of amorphous-crystalline heterostructure silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sark, Wilfried G.J.H.M. van [Utrecht Univ. (Netherlands). Copernicus Institute, Science Technology and Society; Roca, Francesco [Unita Tecnologie Portici, Napoli (Italy). ENEA - Agenzia Nazionale per le Nuove Tecnologie, l' Energia e lo Sviluppo Economico Sostenibile; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie (Germany). Inst. Silizium-Photovoltaik

    2012-07-01

    The challenge of developing photovoltaic (PV) technology to a cost-competitive alternative for established energy sources can be achieved using simple, high-throughput mass-production compatible processes. Issues to be addressed for large scale PV deployment in large power plants or in building integrated applications are enhancing the performance of solar energy systems by increasing solar cell efficiency, using low amounts of materials which are durable, stable, and abundant on earth, and reducing manufacturing and installation cost. Today's solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both ''emitter'' and ''base-contact/back surface field'' on both sides of a thin crystalline silicon wafer-base (c-Si) where the photogenerated electrons and holes are generated; at the same time, a Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. (orig.)

  10. Understanding effects of TCO work function on the performance of organic solar cells by numerical simulation

    CERN Document Server

    Chen, Aqing; Shao, Qingyi; Ji, Zhenguo

    2016-01-01

    The influences of work function of transparent conducting oxides (TCO) on the per-formance of organic solar cells, including open circuit voltage, conversion efficiency and fill factor, has been simulated. It is obtained that for non-Ohmic contact the open circuit voltage and conversion efficiency increase monotonically with the TCO work function but keep constant for Ohmic contact. Fill factor decreases and increases with the electrode work function when the electrode work function is below and above a critical value (4.2 eV for TCO and 4.5 eV for back-contact), respectively. The results of this simulation are significant in the choice of TCO contacts to optimize organic planar heterojunction solar cells.

  11. Improved Performance of Electroplated CZTS Thin-Film Solar Cells with Bifacial Configuration.

    Science.gov (United States)

    Ge, Jie; Yu, Yue; Ke, Weijun; Li, Jian; Tan, Xinxuan; Wang, Zhiwei; Chu, Junhao; Yan, Yanfa

    2016-08-23

    Annealing in S vapor greatly improves the performance of electroplated Cu2 ZnSnS4 (CZTS) solar cells based on the bifacial configuration of Al-doped ZnO (AZO, front contact)/ZnO/CdS/CZTS/indium tin oxide (ITO, back contact), as compared to H2 S annealing in our previous works. S-vapor annealing does not cause severe damage to the conductivity of the ITO back contact. The highest device efficiency of 5.8 % was reached under 1 sun illumination from the AZO side. The well-preformed devices based on the ITO back contact demonstrate smaller series resistances and better fill factors, as compared to our substrate-type devices using Mo back contacts. An interfacial reaction at the ITO back contact has been revealed in experiments, which contributes to the formation of SnO2 -enriched interfacial layer and diffusion of In from ITO into CZTS through the Sn sites. Incorporation of In does not significantly change the optical and structural properties or the grain size of CZTS absorbers. PMID:27400033

  12. Improved Performance of Electroplated CZTS Thin-Film Solar Cells with Bifacial Configuration

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Jie [Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States; Yu, Yue [Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States; Ke, Weijun [Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States; Li, Jian [Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States; Tan, Xinxuan [Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States; Wang, Zhiwei [Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States; National Renewable Energy Laboratory, Golden CO 80401 United States; Chu, Junhao [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, The Chinese Academy of Sciences, Shanghai 800081 China; Yan, Yanfa [Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States

    2016-07-11

    Annealing in S vapor greatly improves the performance of electroplated Cu2ZnSnS4 (CZTS) solar cells based on the bifacial configuration of Al-doped ZnO (AZO, front contact)/ZnO/CdS/CZTS/indium tin oxide (ITO, back contact), as compared to H2S annealing in our previous works. S-vapor annealing does not cause severe damage to the conductivity of the ITO back contact. The highest device efficiency of 5.8% was reached under 1 sun illumination from the AZO side. The well-preformed devices based on the ITO back contact demonstrate smaller series resistances and better fill factors, as compared to our substrate-type devices using Mo back contacts. An interfacial reaction at the ITO back contact has been revealed in experiments, which contributes to the formation of SnO2-enriched interfacial layer and diffusion of In from ITO into CZTS through the Sn sites. Incorporation of In does not significantly change the optical and structural properties or the grain size of CZTS absorbers.

  13. The properties of CdTe solar cells with ZnTe/ZnTe: Cu buffer layers

    Institute of Scientific and Technical Information of China (English)

    Song Huijin; Zheng Jiagui; Feng Lianghuan; Yan Qiang; Lei Zhi; Wu Lili; Zhang Jingquan; Li Wei; Li Bing

    2008-01-01

    CdS/CdTe solar cells with ZnTe/ZnTe:Cu buffer layers were fabricated and studied. The energy band structure of it was analyzed. The C-V, I-V characteristics and the spectral response show that the ZnTe/ZnTe:Cu buffer layers improve the back contact characteristic properties, the diode characteristics of the forward junction and the short-wave spectral response of the CdTe solar cells. The ZnTe/ZnTe:Cu buffer layers affect the solar cell conversion efficiency and its fill factor.

  14. Surface Passivation Studies on n+pp+ Bifacial Solar Cell

    OpenAIRE

    Suhaila Sepeai; M. Y. Sulaiman; Kamaruzzaman Sopian; Saleem H. Zaidi

    2012-01-01

    Bifacial solar cell is a specially designed solar cell for the production of electricity from both sides of the solar cell. It is an active field of research to make photovoltaics (PV) more competitive by increasing its efficiency and lowering its costs. We developed an n+pp+ structure for the bifacial solar cell. The fabrication used phosphorus-oxy-trichloride (POCl3) diffusion to form the emitter and Al diffusion using conventional screen printing to produce the back surface field (BSF). Th...

  15. Test and simulation of drain-back solar DHW system from SolarNor AS, Norway

    Energy Technology Data Exchange (ETDEWEB)

    Lin Qin

    1997-12-31

    A drain-back solar DHW system from SolarNor AS, Norway was built and tested in laboratory`s test facility. A detailed simulation model have been developed for predicting the annually performance of the system. The simulation model was modified by means of comparison of the simulation results with the measurements. By using this simulation model the yearly thermal performance of the system have been investigated with the Danish Test Reference Year as the input weather data. (EG)

  16. Rectenna solar cells

    CERN Document Server

    Moddel, Garret

    2013-01-01

    Rectenna Solar Cells discusses antenna-coupled diode solar cells, an emerging technology that has the potential to provide ultra-high efficiency, low-cost solar energy conversion. This book will provide an overview of solar rectennas, and provide thorough descriptions of the two main components: the diode, and the optical antenna. The editors discuss the science, design, modeling, and manufacturing of the antennas coupled with the diodes. The book will provide concepts to understanding the challenges, fabrication technologies, and materials required to develop rectenna structures. Written by e

  17. Laser processing of solar cells with anti-reflective coating

    Energy Technology Data Exchange (ETDEWEB)

    Harley, Gabriel; Smith, David D.; Dennis, Tim; Waldhauer, Ann; Kim, Taeseok; Cousins, Peter John

    2016-02-16

    Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

  18. Electron irradiation of modern solar cells

    Science.gov (United States)

    Anspaugh, B. E.; Miyahira, T. F.

    1977-01-01

    A number of modern solar cell types representing 1976 technology (as well as some older types) were irradiated with 1 MeV electrons (and a limited number with 2 MeV electrons and 10 MeV protons). After irradiation, the cells were annealed, with I-V curves measured under AMO at 30 C. The purpose was to provide data to be incorporated in the revision of the solar cell radiation handbook. Cell resistivities ranged from 2 to 20 ohm-cm, and cell thickness from 0.05 to 0.46 mm. Cell types examined were conventional, shallow junction, back surface field (BSF), textured, and textured with BSF.

  19. Silicon solar cell characterization at low temperatures and low illumination as a function of particulate irradiation

    Science.gov (United States)

    Whitaker, A. F.; Little, S. A.; Peacock, C. L., Jr.

    1983-01-01

    Various configurations of back surface reflector silicon solar cells including small (2 x 2) cm and large (approx. 6 x 6) cm cells with conventional and wraparound contacts were subjected to 1 MeV electron irradiation and characterized under both Earth orbital and deep space conditions of temperatures and illuminations. Current-Voltage (I-V) data were generated from +65 C to -150 C and at incident illuminations from 135.3 mW/sq cm to 5.4 mW/sq cm for these cells. Degradation in cell performance which is manifested only under deep space conditions is emphasized. In addition, the effect of particle irradiation on the high temperature and high intensity and low temperature and low intensity performance of the cells is described. The cells with wraparound contacts were found to have lower efficiencies at Earth orbital conditions than the cells with conventional contacts.

  20. Low-high junction theory applied to solar cells

    Science.gov (United States)

    Godlewski, M. P.; Baraona, C. R.; Brandhorst, H. W., Jr.

    1974-01-01

    Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage and improved radiation resistance. Several analytical models for open-circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero surface recombination velocity (SRV) case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells.

  1. Numerical simulation: Toward the design of high-efficiency planar perovskite solar cells

    International Nuclear Information System (INIS)

    Organo-metal halide perovskite solar cells based on planar architecture have been reported to achieve remarkably high power conversion efficiency (PCE, >16%), rendering them highly competitive to the conventional silicon based solar cells. A thorough understanding of the role of each component in solar cells and their effects as a whole is still required for further improvement in PCE. In this work, the planar heterojunction-based perovskite solar cells were simulated with the program AMPS (analysis of microelectronic and photonic structures)-1D. Simulation results revealed a great dependence of PCE on the thickness and defect density of the perovskite layer. Meanwhile, parameters including the work function of the back contact as well as the hole mobility and acceptor density in hole transport materials were identified to significantly influence the performance of the device. Strikingly, an efficiency over 20% was obtained under the moderate simulation conditions.

  2. Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells

    Science.gov (United States)

    Williams, B. L.; Taylor, A. A.; Mendis, B. G.; Phillips, L.; Bowen, L.; Major, J. D.; Durose, K.

    2014-02-01

    Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was η = 2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (ϕB = 0.52 eV) and low shunt resistances (RSH < 500 Ω.cm2).

  3. Achievements and Challenges of CdS/CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhou Fang

    2011-01-01

    Full Text Available Thin film CdS/CdTe has long been regarded as one promising choice for the development of cost-effective and reliable solar cells. Efficiency as high as 16.5% has been achieved in CdS/CdTe heterojunction structure in laboratory in 2001, and current techniques for CdS/CdTe solar cells gradually step toward commercialization. This paper reviews some novel techniques mainly within two years to solve this problem from aspects of promotion of fabrication technology, structural modification, and choice of back contact materials.

  4. Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells

    International Nuclear Information System (INIS)

    Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was η = 2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (ϕB = 0.52 eV) and low shunt resistances (RSH 2)

  5. Quantum dot solar cells

    CERN Document Server

    Wu, Jiang

    2013-01-01

    The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou

  6. Dye Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Di Wei

    2010-03-01

    Full Text Available Dye sensitized solar cell (DSSC is the only solar cell that can offer both the flexibility and transparency. Its efficiency is comparable to amorphous silicon solar cells but with a much lower cost. This review not only covers the fundamentals of DSSC but also the related cutting-edge research and its development for industrial applications. Most recent research topics on DSSC, for example, applications of nanostructured TiO2, ZnO electrodes, ionic liquid electrolytes, carbon nanotubes, graphene and solid state DSSC have all been included and discussed.

  7. Solar cell radiation handbook

    Science.gov (United States)

    Tada, H. Y.; Carter, J. R., Jr.; Anspaugh, B. E.; Downing, R. G.

    1982-01-01

    The handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented. Solar cell theory, cell manufacturing and how they are modeled mathematically are described. The interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence are presented.

  8. Plasmonic Dye-Sensitized Solar Cells

    KAUST Repository

    Ding, I-Kang

    2010-12-14

    This image presents a scanning electron microscopy image of solid state dye-sensitized solar cell with a plasmonic back reflector, overlaid with simulated field intensity plots when monochromatic light is incident on the device. Plasmonic back reflectors, which consist of 2D arrays of silver nanodomes, can enhance absorption through excitation of plasmonic modes and increased light scattering, as reported by Michael D. McGehee, Yi Cui, and co-workers.

  9. Black Silicon Solar Cells with Black Ribbons

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Tang, Peter Torben; Mizushima, Io;

    2016-01-01

    We present the combination of mask-less reactive ion etch (RIE) texturing and blackened interconnecting ribbons as a method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon made by mask-less reactive ion etching has total, average...... in the range 15.7-16.3%. The KOH-textured reference cell had an efficiency of 17.9%. The combination of black Si and black interconnecting ribbons may result in aesthetic, all-black panels based on conventional, front-contacted silicon solar cells....... reflectance below 0.5% across a 156x156 mm2 silicon (Si) wafer. Black interconnecting ribbons were realized by oxidizing copper resulting in reflectance below 3% in the visible wavelength range. Screen-printed Si solar cells were realized on 156x156 mm2 black Si substrates with resulting efficiencies...

  10. Process development for single-crystal silicon solar cells

    Science.gov (United States)

    Bohra, Mihir H.

    Solar energy is a viable, rapidly growing and an important renewable alternative to other sources of energy generation because of its abundant supply and low manufacturing cost. Silicon still remains the major contributor for manufacturing solar cells accounting for 80% of the market share. Of this, single-crystal solar cells account for half of the share. Laboratory cells have demonstrated 25% efficiency; however, commercial cells have efficiencies of 16% - 20% resulting from a focus on implementation processes geared to rapid throughput and low cost, thereby reducing the energy pay-back time. An example would be the use of metal pastes which dissolve the dielectric during the firing process as opposed to lithographically defined contacts. With current trends of single-crystal silicon photovoltaic (PV) module prices down to 0.60/W, almost all other PV technologies are challenged to remain cost competitive. This presents a unique opportunity in revisiting the PV cell fabrication process and incorporating moderately more expensive IC process practices into PV manufacturing. While they may drive the cost toward a 1/W benchmark, there is substantial room to "experiment", leading to higher efficiencies which will help maintain the overall system cost. This work entails a turn-key process designed to provide a platform for rapid evaluation of novel materials and processes. A two-step lithographic process yielding a baseline 11% - 13% efficient cell is described. Results of three studies have shown improvements in solar cell output parameters due to the inclusion of a back-surface field implant, a higher emitter doping and also an additional RCA Clean.

  11. Characterization and Modeling of CdS/CdTe Heterojunction Thin-Film Solar Cell for High Efficiency Performance

    OpenAIRE

    Fatima Buny; Hamid Fardi

    2013-01-01

    Device simulation is used to investigate the current-voltage efficiency performance in CdTe/CdS photovoltaic solar cell. The role of several limiting factors such as back contact Schottky barrier and its relationship to the doping density and layer thickness is examined. The role of surface recombination velocity at back contact interface and extended CdTe layer is included. The base CdS/CdTe experimental device used in this study shows an efficiency of 16-17%. Simulation analysis is used to ...

  12. Advanced nanostructured materials and their application for improvement of sun-light harvesting and efficiency of solar cells

    Science.gov (United States)

    Dimova-Malinovska, D.

    2016-02-01

    This review describes the application of different nanostructured materials in solar cells technology for improvement of sun-light harvesting and their efficiency. Several approaches have recently been proposed to increase the efficiency of solar cells above the theoretical limit which are based on a “photon management” concept that employs such phenomena as: (i) down-conversion, and (ii) surface plasmon resonance effect (iii) decreasing of the loss due to the reflection of the radiation, (iv) increasing of the reflection from the back contact, v) increasing of the effective solar cells surface, etc. The results demonstrate the possibility for to increasing of light harvesting, short circuit current and efficiency by application of nanomaterials in thin film and hetero-junction (HJ) solar cells. The first promising results allow an expectation for application of advanced nanomaterials in the 3d generation solar cells.

  13. Transparent conductive oxides for thin-film silicon solar cells

    Science.gov (United States)

    Löffler, J.

    2005-04-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150 º C and 350 º C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the cells

  14. Transparent Conductive Oxides for Thin-Film Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Loeffler, J.

    2005-04-25

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150C and 350C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the

  15. Nanowire-based All Oxide Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Yang*, Benjamin D. Yuhas and Peidong; Yang, Peidong

    2008-12-07

    We present an all-oxide solar cell fabricated from vertically oriented zinc oxide nanowires and cuprous oxide nanoparticles. Our solar cell consists of vertically oriented n-type zinc oxide nanowires, surrounded by a film constructed from p-type cuprous oxide nanoparticles. Our solution-based synthesis of inexpensive and environmentally benign oxide materials in a solar cell would allow for the facile production of large-scale photovoltaic devices. We found that the solar cell performance is enhanced with the addition of an intermediate oxide insulating layer between the nanowires and the nanoparticles. This observation of the important dependence of the shunt resistance on the photovoltaic performance is widely applicable to any nanowire solar cell constructed with the nanowire array in direct contact with one electrode.

  16. Welded solar cell interconnection

    Science.gov (United States)

    Stofel, E. J.; Browne, E. R.; Meese, R. A.; Vendura, G. J.

    1982-01-01

    The efficiency of the welding of solar-cell interconnects is compared with the efficiency of soldering such interconnects, and the cases in which welding may be superior are examined. Emphasis is placed on ultrasonic welding; attention is given to the solar-cell welding machine, the application of the welding process to different solar-cell configurations, producibility, and long-life performance of welded interconnects. Much of the present work has been directed toward providing increased confidence in the reliability of welding using conditions approximating those that would occur with large-scale array production. It is concluded that there is as yet insufficient data to determine which of three methods (soldering, parallel gap welding, and ultrasonic welding) provides the longest-duration solar panel life.

  17. Simulation Optimizing of Back Surface Field of Bifacial HIT Solar Cell on n-type Substrate%n型衬底上双面HIT太阳电池背场的模拟优化

    Institute of Scientific and Technical Information of China (English)

    张研研; 任瑞晨; 史力斌

    2012-01-01

    采用美国滨州大学研发的AMPS-1D软件,模拟了背场对TCO/a-Si∶ H(p+)/a-Si∶ H(i)/c-Si(n) /a-Si∶ H(i) /a-Si∶ H(n+)/TCO双面HIT异质结太阳电池光伏特性的影响.结果表明在背场掺杂浓度NB≥1×1018cm-3时,带隙在1.60~ 1.92 eV范围内的宽带隙薄膜硅材料比较适合作为双面HIT太阳电池的背场.模拟中还发现,背场n+层掺杂浓度对太阳电池性能的影响要受到该层隙间态密度的制约,隙间态密度越大,则对背场掺杂浓度的要求越高.%The effect of back surface field(BSF) on the photovoltaic characteristics of TCO/a-Si: H(p+ )/ a-Si: H(i)/c-Si(n) /a-Si: H(i) /a-Si: H(n+ ) /TCO heterojunction solar cell was simulated by AMPS-ID software developed by the Pennsylvania State University. The results indicate that thin film silicon materials with the band gap between 1.60 eV and 1.92 eV are more suitable for BSF of bifacial HIT solar cell when the doping concentration of BSF meets NB ≥ 1 × 1018 cm-3. It is also found that the influence of doping concentration of BSF n + layer on the performance of solar cell is restricted by the density of gap state. The density of gap state is bigger, the demand for the doping concentration of BSF is higher.

  18. Towards upconversion for amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    de Wild, J.; Rath, J.K.; Schropp, R.E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Meijerink, A. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Condensed Matter and Interfaces, P.O. Box 80000, 3508 TA Utrecht (Netherlands); van Sark, W.G.J.H.M. [Utrecht University, Copernicus Institute for Sustainable Development and Innovation, Science, Technology and Society, Heidelberglaan 2, 3584 CS Utrecht (Netherlands)

    2010-11-15

    Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR-vis upconverter {beta}-NaYF{sub 4}:Yb{sup 3+}(18%) Er{sup 3+}(2%) at the back of an amorphous silicon solar cell in combination with a white back reflector and its response to infrared irradiation. Current-voltage measurements and spectral response measurements were done on experimental solar cells. An enhancement of 10 {mu}A/cm{sup 2} was measured under illumination with a 980 nm diode laser (10 mW). A part of this was due to defect absorption in localized states of the amorphous silicon. (author)

  19. Test and Simulation of Drain-back Solar DHW System from SolarNor AS. Norway

    DEFF Research Database (Denmark)

    Qin, Lin

    1997-01-01

    A drain-back solar domestic hot water (DHW) system from SolarNor AS, Norway was built and tested in the laboratory’s test facility. The thermal performance of the system has been measured for the period from May to November 1997. A detailed simulation model have been developed for predicting the...... annually performance of the system. The simulation model was modified by means of comparison of the simulation results with the measurements. By using this simulation model the yearly thermal performance of the system have been investigated with the Danish Test Reference Year as the input weather data....

  20. Photocurrent images of amorphous-silicon solar-cell modules

    Science.gov (United States)

    Kim, Q.; Shumka, A.; Trask, J.

    1985-01-01

    Results obtained in applying the unique characteristics of the solar cell laser scanner to investigate the defects and quality of amorphous silicon cells are presented. It is concluded that solar cell laser scanners can be effectively used to nondestructively test not only active defects but also the cell quality and integrity of electrical contacts.

  1. Parameterization of solar cells

    Science.gov (United States)

    Appelbaum, J.; Chait, A.; Thompson, D.

    1992-10-01

    The aggregation (sorting) of the individual solar cells into an array is commonly based on a single operating point on the current-voltage (I-V) characteristic curve. An alternative approach for cell performance prediction and cell screening is provided by modeling the cell using an equivalent electrical circuit, in which the parameters involved are related to the physical phenomena in the device. These analytical models may be represented by a double exponential I-V characteristic with seven parameters, by a double exponential model with five parameters, or by a single exponential equation with four or five parameters. In this article we address issues concerning methodologies for the determination of solar cell parameters based on measured data points of the I-V characteristic, and introduce a procedure for screening of solar cells for arrays. We show that common curve fitting techniques, e.g., least squares, may produce many combinations of parameter values while maintaining a good fit between the fitted and measured I-V characteristics of the cell. Therefore, techniques relying on curve fitting criteria alone cannot be directly used for cell parameterization. We propose a consistent procedure which takes into account the entire set of parameter values for a batch of cells. This procedure is based on a definition of a mean cell representing the batch, and takes into account the relative contribution of each parameter to the overall goodness of fit. The procedure is demonstrated on a batch of 50 silicon cells for Space Station Freedom.

  2. Organic-inorganic halide perovskite/crystalline silicon four-terminal tandem solar cells.

    Science.gov (United States)

    Löper, Philipp; Moon, Soo-Jin; de Nicolas, Sílvia Martín; Niesen, Bjoern; Ledinsky, Martin; Nicolay, Sylvain; Bailat, Julien; Yum, Jun-Ho; De Wolf, Stefaan; Ballif, Christophe

    2015-01-21

    Tandem solar cells constructed from a crystalline silicon (c-Si) bottom cell and a low-cost top cell offer a promising way to ensure long-term price reductions of photovoltaic modules. We present a four-terminal tandem solar cell consisting of a methyl ammonium lead triiodide (CH3NH3PbI3) top cell and a c-Si heterojunction bottom cell. The CH3NH3PbI3 top cell exhibits broad-band transparency owing to its design free of metallic components and yields a transmittance of >55% in the near-infrared spectral region. This allows the generation of a short-circuit current density of 13.7 mA cm(-2) in the bottom cell. The four-terminal tandem solar cell yields an efficiency of 13.4% (top cell: 6.2%, bottom cell: 7.2%), which is a gain of 1.8%abs with respect to the reference single-junction CH3NH3PbI3 solar cell with metal back contact. We employ the four-terminal tandem solar cell for a detailed investigation of the optical losses and to derive guidelines for further efficiency improvements. Based on a power loss analysis, we estimate that tandem efficiencies of ∼28% are attainable using an optically optimized system based on current technology, whereas a fully optimized, ultimate device with matched current could yield up to 31.6%.

  3. Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

    KAUST Repository

    Black, J. P.

    2013-10-22

    In screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a monotonic increasing, monotonic decreasing, or nonmonotonic function of the electron flux, depending on the values of the physical parameters. © 2013 Society for Industrial and Applied Mathematics.

  4. Plastic solar cell interface and morphological characterization

    Science.gov (United States)

    Guralnick, Brett W.

    Plastic solar cell research has become an intense field of study considering these devices may be lightweight, flexible and reduce the cost of photovoltaic devices. The active layer of plastic solar cells are a combination of two organic components which blend to form an internal morphology. Due to the poor electrical transport properties of the organic components it is important to understand how the morphology forms in order to engineer these materials for increased efficiency. The focus of this thesis is a detailed study of the interfaces between the plastic solar cell layers and the morphology of the active layer. The system studied in detail is a blend of P3HT and PCBM that acts as the primary absorber, which is the electron donor, and the electron acceptor, respectively. The key morphological findings are, while thermal annealing increases the crystallinity parallel to the substrate, the morphology is largely unchanged following annealing. The deposition and mixing conditions of the bulk heterojunction from solution control the starting morphology. The spin coating speed, concentration, solvent type, and solution mixing time are all critical variables in the formation of the bulk heterojunction. In addition, including the terminals or inorganic layers in the analysis is critical because the inorganic surface properties influence the morphology. Charge transfer in the device occurs at the material interfaces, and a highly resistive transparent conducting oxide layer limits device performance. It was discovered that the electron blocking layer between the transparent conducting oxide and the bulk heterojunction is compromised following annealing. The electron acceptor material can diffuse into this layer, a location which does not benefit device performance. Additionally, the back contact deposition is important since the organic material can be damaged by the thermal evaporation of Aluminum, typically used for plastic solar cells. Depositing a thin thermal and

  5. Measurement Back-Action in Quantum Point-Contact Charge Sensing

    Directory of Open Access Journals (Sweden)

    Bruno Küng

    2010-06-01

    Full Text Available Charge sensing with quantum point-contacts (QPCs is a technique widely used in semiconductor quantum-dot research. Understanding the physics of this measurement process, as well as finding ways of suppressing unwanted measurement back-action, are therefore both desirable. In this article, we present experimental studies targeting these two goals. Firstly, we measure the effect of a QPC on electron tunneling between two InAs quantum dots, and show that a model based on the QPC’s shot-noise can account for it. Secondly, we discuss the possibility of lowering the measurement current (and thus the back-action used for charge sensing by correlating the signals of two independent measurement channels. The performance of this method is tested in a typical experimental setup.

  6. Microsystems enabled photovoltaics: 14.9% efficient 14 {mu}m thick crystalline silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Cruz-Campa, Jose L. [Sandia National Laboratories, M.S. 1080, 1515 Eubank Blvd. SE, Albuquerque, NM 87123 (United States); University of Texas at El Paso, Department of Electrical and Computer Engineering, 500 West University Avenue, El Paso, TX 79968 (United States); Okandan, Murat; Resnick, Paul J.; Clews, Peggy; Pluym, Tammy; Grubbs, Robert K.; Gupta, Vipin P.; Nielson, Gregory N. [Sandia National Laboratories, M.S. 1080, 1515 Eubank Blvd. SE, Albuquerque, NM 87123 (United States); Zubia, David [University of Texas at El Paso, Department of Electrical and Computer Engineering, 500 West University Avenue, El Paso, TX 79968 (United States)

    2011-02-15

    Crystalline silicon solar cells 10-15 times thinner than traditional commercial c-Si cells with 14.9% efficiency are presented with modeling, fabrication, and testing details. These cells are 14 {mu}m thick, 250 {mu}m wide, and have achieved 14.9% solar conversion efficiency under AM 1.5 spectrum. First, modeling results illustrate the importance of high-quality passivation to achieve high efficiency in thin silicon, back contacted solar cells. Then, the methodology used to fabricate these ultra thin devices by means of established microsystems processing technologies is presented. Finally, the optimization procedure to achieve high efficiency as well as the results of the experiments carried out with alumina and nitride layers as passivation coatings are discussed. (author)

  7. Solar cell element

    Energy Technology Data Exchange (ETDEWEB)

    Nakano, Akihiko; Matsumoto, Hitoshi; Uda, Hiroshi; Komatsu, Yasumitsu; Ikegami, Kiyoharu.

    1989-05-18

    In the existing CdS/CdTe-based solar cell element, nothing is formed except the component effective for generating electromotive force and the components necessary for leading, collecting and extracting the generated electricity, hence even when the element shows deterioration of its performance during its usage, it has been difficult to analyze the above situation. In addition, it has also a defect that its characteristic such as the transfer efficiency in the neighborhood of its glass substrate in connection also with its manufacturing process. In order to solve the above problematical points, this invention proposes, with regard to a CdS-based solar cell element composed by forming a thin film on its substrate, to make a blank space on the above substrate and form thereon a thin film which composes the solar cell element concerned alone or in a piling up manner. 4 figs.

  8. Organic Tandem Solar Cells: Design and Formation

    Science.gov (United States)

    Chen, Chun-Chao

    polyelectrolyte layer functioning as the surface dipole formation layer to provide better electrical contact with the photoactive layer. Due to the effectiveness of the conjugated polyelectrolyte layer, performance improvement was also observed. Furthermore, other issues regarding the semi-transparent tandem solar cells (e.g., photocurrent matching, exterior color tuning, and transparency tuning) are all explored to optimize best performance. In Chapter 5 and 6, the architectures of double- and triple-junction tandem solar cells are explored. Theoretically, triple-junction tandem solar cells with three photoactive absorbers with cascaded energy bandgaps have the potential to achieve higher performance, in comparison with double-junction tandem solar cells. Such expectations can be ascribed to the minimized carrier thermalization loss and further improved light absorption. However, the design of triple-junction solar cells often involves sophisticated multiple layer deposition as well as substantial optimization. Therefore, there is a lack of successful demonstrations of triple-junction solar cells outperforming the double-junction counterparts. To solve the incompatible issues related to the layer deposition in the fabrication, we proposed a novel architecture of inverted-structure tandem solar cells with newly designed interconnecting layers. Our design of interconnecting layers does not only focus on maintaining the orthogonal solution processing advantages, but also provides an excellent compatibility in the energy level alignment to allow different absorber materials to be used. Furthermore, we also explored the light management inside the double- and triple-junction tandem solar cells. The study of light management was carried out through optical simulation method based transfer matrix formalism. The intention is to obtain a balanced photocurrent output from each subcells inside the tandem solar cell, thus the minimal recombination loss at the contact of interconnecting

  9. Optoelectronics of solar cells

    CERN Document Server

    Smestad, Greg P

    2002-01-01

    With concerns about worldwide environmental security, global warming, and climate change due to emissions of carbon dioxide from the burning of fossil fuels, it is desirable to have a wide range of energy technologies in a nation's portfolio. Photovoltaics, or solar cells, are a viable option as a nonpolluting renewable energy source. This text is designed to be an overview of photovoltaic solar cells for those in the fields of optics and optical engineering, as well as those who are interested in energy policy, economics, and the requirements for efficient photo-to-electric energy conversion.

  10. Characterization of solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Haerkoenen, J.; Tuominen, E.; Nybergh, K.; Ezer, Y.; Yli-Koski, M.; Sinkkonen, J. [Helsinki Univ. of Technology, Otaniemi (Finland). Dept. of Electrical and Communications Engineering

    1998-10-01

    Photovoltaic research in the Electron Physics Laboratory started in 1993, when laboratory joined the national TEKES/NEMO 2 research program. Since the beginning of the project, characterization as well as experimentally orientated development of the fabrication process of the solar cells were carried out parallery. The process development research started by the initiatives of the Finnish industry. At the moment a large amount of the laboratory personnel works on solar cell research and the financing comes mainly from external projects. The funding for the research has come from TEKES, Ministry of Education, Finnish Academy, GETA graduate school, special equipment grants of the university, and from the laboratory

  11. Understanding the effects of TCO work function on the performance of organic solar cells by numerical simulation

    Science.gov (United States)

    Chen, Aqing; Zhu, Kaigui; Shao, Qingyi; Ji, Zhenguo

    2016-06-01

    The influences of the work function of transparent conducting oxides (TCO) on the performance of organic solar cells, including open circuit voltage, conversion efficiency and fill factor, has been simulated. It is found that for non-ohmic contact the open circuit voltage and conversion efficiency increase monotonically with the TCO work function but remain constant for ohmic contact. The fill factor decreases and increases with the electrode work function when the electrode work function is below and above a critical value (4.2 eV for TCO and 4.5 eV for back-contact), respectively. The results of this simulation are significant in the choice of TCO contacts to optimize organic planar heterojunction solar cells.

  12. Nanostructured thin films for multiband-gap silicon triple junction solar cells

    OpenAIRE

    R. E. I. Schropp; Li, H. B. T.; Franken, R.H.; Rath, J.K.; van der Werf, C.H.M.; Schuttauf, J.A.; Stolk, R.L.

    2008-01-01

    By implementing nanostructure in multiband-gap proto-Si/proto-SiGe/nc-Si:H triple junction n–i–p solar cells, a considerable improvement in performance has been achieved. The unalloyed active layers in the top and bottom cell of these triple junction cells are deposited by Hot-Wire CVD. A significant current enhancement is obtained by using textured Ag/ZnO back contacts instead of plain stainless steel. We studied the correlation between the integrated current density in the long-wavelength r...

  13. Surface recombination analysis in silicon-heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Barrio, R.; Gandia, J.J.; Carabe, J.; Gonzalez, N.; Torres, I. [CIEMAT, Madrid (Spain); Munoz, D.; Voz, C. [Universitat Politecnica de Catalunya, Barcelona (Spain)

    2010-02-15

    The origin of this work is the understanding of the correlation observed between efficiency and emitter-deposition temperature in single silicon-heterojunction solar cells prepared by depositing an n-doped hydrogenated-amorphous-silicon thin film onto a p-type crystalline-silicon wafer. In order to interpret these results, surface-recombination velocities have been determined by two methods, i.e. by fitting the current-voltage characteristics to a theoretical model and by means of the Quasi-Steady-State Photoconductance Technique (QSSPC). In addition, effective diffusion lengths have been estimated from internal quantum efficiencies. The analysis of these data has led to conclude that the performance of the cells studied is limited by back-surface recombination rather than by front-heterojunction quality. A 12%-efficient cell has been prepared by combining optimum emitter-deposition conditions with back-surface-field (BSF) formation by vacuum annealing of the back aluminium contact. This result has been achieved without using any transparent conductive oxide. (author)

  14. NASA Facts, Solar Cells.

    Science.gov (United States)

    National Aeronautics and Space Administration, Washington, DC.

    The design and function of solar cells as a source of electrical power for unmanned space vehicles is described in this pamphlet written for high school physical science students. The pamphlet is one of the NASA Facts Science Series (each of which consists of four pages) and is designed to fit in the standard size three-ring notebook. Review…

  15. Degradation of CIGS solar cells

    NARCIS (Netherlands)

    Theelen, M.J.

    2015-01-01

    Thin film CIGS solar cells and individual layers within these solar cells have been tested in order to assess their long term stability. Alongside with the execution of standard tests, in which elevated temperatures and humidity levels are used, the solar cells have also been exposed to a combinatio

  16. Correcting For Capacitance In Tests Of Solar Cells

    Science.gov (United States)

    Mueller, Robert L.

    1995-01-01

    Modified procedure for testing solar photovoltaic cells and modified software for processing test data provide corrections for effects of cell capacitance. Procedure and software needed because (a) some photovoltaic devices (for example, silicon solar cells with back-surface field region) store minority charge carriers in cell junction and thus exhibit significant capacitance, (b) capacitance affects current-vs.-voltage (I-V) measurements made when transient load connected to cell, and (c) transient load used in unmodified version of test procedure. Corrected I-V curve obtained in test of solar cell according to modified procedure approximates true cell voltage vs. cell current more closely.

  17. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    Directory of Open Access Journals (Sweden)

    M. M. Aliyu

    2012-01-01

    Full Text Available This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears the most favorable candidate, while close spaced sublimation (CSS, electrodeposition (ED, magnetic sputtering (MS, and high vacuum thermal evaporation (HVE have been found to be most common deposition technologies used for CdTe on metal foils. The advantages of these techniques include large grain size (CSS, ease of constituent control (ED, high material incorporation (MS, and low temperature process (MS, HVE, ED. These invert-structured thin film CdTe solar cells, like their superstrate counterparts, suffer from problems of poor ohmic contact at the back electrode. Thus similar strategies are applied to minimize this problem. Despite the challenges faced by flexible structures, efficiencies of up to 13.8% and 7.8% have been achieved in superstrate and substrate cell, respectively. Based on these analyses, new strategies have been proposed for obtaining cheaper, more efficient, and viable flexible CdTe solar cells of the future.

  18. Preparation of conjugated polymer-based composite thin film for application in solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Yang-Yen, E-mail: yyyu@mail.mcut.edu.tw [Department of Materials Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Battery Research Center of Green Energy, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Center for Thin Film Technologies and Applications, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Chien, Wen-Chen [Department of Chemical Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Battery Research Center of Green Energy, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Ko, Yu-Hsin [Department of Materials Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Chen, Chih-Ping [Department of Materials Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Battery Research Center of Green Energy, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Chang, Chao-Ching [Department of Chemical and Materials Engineering, Tamkang University, 151, Yingzhuan Rd., Tamsui Dist., New Taipei City 25137, Taiwan (China)

    2015-06-01

    This paper reports on the enhanced cell efficiency of structures and properties of regioregular poly(3-hexylthiophene) (P3HT)/multiwalled carbon nanotube (MWNT) hybrid materials. The prepared hybrid materials were characterized using ultraviolet–visible absorption spectroscopy, photoluminescence spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Different concentrations of these MWNTs were suspended in polymer solutions and spin-cast onto indium tin oxide (ITO) glass. Solar cells with a device structure of ITO/poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) /P3HT:MWNTs/aluminum were then produced using evaporated aluminum as the back contact. The results showed that the ratio of P3HT to MWNTs considerably influenced the performance of the fabricated solar cells. The efficiency of the solar cells increased with the ratio of carbon nanotubes. Monochromatic incident photon-to-electron conversion efficiency analysis was performed and the results indicated that at the optimal P3HT/MWNTs ratio (= 1/1), the solar cells demonstrated a high-quality conversion of 2.16% with a fill factor of 42.22%, an open circuit voltage of 0.56 V, and a short circuit current of 9.12 mA/cm{sup 2}. - Highlights: • Solar cells ITO/PEDOT:PSS(DMSO)/P3HT:MWNT/Al were fabricated. • Optimal ratio of P3HT to MWNT was investigated. • Solar cell with 2.16% efficiency was obtained.

  19. Preparation of conjugated polymer-based composite thin film for application in solar cell

    International Nuclear Information System (INIS)

    This paper reports on the enhanced cell efficiency of structures and properties of regioregular poly(3-hexylthiophene) (P3HT)/multiwalled carbon nanotube (MWNT) hybrid materials. The prepared hybrid materials were characterized using ultraviolet–visible absorption spectroscopy, photoluminescence spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Different concentrations of these MWNTs were suspended in polymer solutions and spin-cast onto indium tin oxide (ITO) glass. Solar cells with a device structure of ITO/poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) /P3HT:MWNTs/aluminum were then produced using evaporated aluminum as the back contact. The results showed that the ratio of P3HT to MWNTs considerably influenced the performance of the fabricated solar cells. The efficiency of the solar cells increased with the ratio of carbon nanotubes. Monochromatic incident photon-to-electron conversion efficiency analysis was performed and the results indicated that at the optimal P3HT/MWNTs ratio (= 1/1), the solar cells demonstrated a high-quality conversion of 2.16% with a fill factor of 42.22%, an open circuit voltage of 0.56 V, and a short circuit current of 9.12 mA/cm2. - Highlights: • Solar cells ITO/PEDOT:PSS(DMSO)/P3HT:MWNT/Al were fabricated. • Optimal ratio of P3HT to MWNT was investigated. • Solar cell with 2.16% efficiency was obtained

  20. Characterization of solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Haerkoenen, J.; Tuominen, E.; Nybergh, K.; Ezer, Y.; Yli-Koski, M.; Sinkkonen, J. [Helsinki Univ. of Technology (Finland). Dept. of Electrical and Communications Engineering

    1998-12-31

    Photovoltaic research began at the Electron Physics Laboratory of the Helsinki University of Tehnology in 1993, when the laboratory joined the national NEMO 2 research program. During the early stages of the photovoltaic research the main objective was to establish necessary measurement and characterisation routines, as well as to develop the fabrication process. The fabrication process development work has been supported by characterisation and theoretical modelling of the solar cells. Theoretical investigations have been concerned with systematic studies of solar cell parameters, such as diffusion lengths, surface recombination velocities and junction depths. The main result of the modelling and characterisation work is a method which is based on a Laplace transform of the so-called spatial collection efficiency function of the cell. The basic objective of the research has been to develop a fabrication process cheap enough to be suitable for commercial production

  1. Potential of optical design in tandem micromorph silicon solar cells

    Science.gov (United States)

    Krc, J.; Campa, A.; Smole, F.; Topic, M.

    2006-04-01

    The potential of three advanced optical designs in tandem micromorph silicon solar cells are analysed by means of optical simulations: enhanced light scattering, intermediate reflector (interlayer) and antireflective coating (ARC) on glass. The effects on quantum efficiency, QE, and short circuit current density, J SC, of the top and bottom cell are investigated. In case of enhanced light scattering, the role of haze parameter and angular distribution function of scattered light is analysed separately. High haze parameter improves light trapping in top and bottom cell. However, the improvement in QE and J SC of the bottom cell is limited at higher haze parameters due to increased absorption in top cell and increased optical losses in realistic textured ZnO/Ag back contact. Broad ADF plays an important role for improving the performances of both, top and bottom cell. The role of refractive index of an interlayer between top and bottom cell is analysed. Significant increases in QE and J SC of the top cell are revealed for small refractive indexes of the interlayer (n cell is observed. Optimisation of thickness and refractive index of a single-layer ARC on glass is carried out in order to obtain maximal J SC either in top or in bottom cell. Moderate increases in J SC and QE are obtained for optimised ARC parameters. Among the three optical designs, the greatest potential, considering the improvements in both cells, is revealed for enhanced light scattering.

  2. Progress in amorphous silicon solar cells produced by reactive sputtering

    Science.gov (United States)

    Moustakas, T. D.

    The photovoltaic properties of reactively sputtered amorphous silicon are reviewed and it is shown that efficient PIN solar cells can be fabricated by the method of sputtering. The photovoltaic properties of the intrinsic films correlate with their structural and compositional inhomogeneities. Hydrogen incorporation and small levels of phosphorus and boron impurities also affect the photovoltaic properties through reduction of residual dangling bond related defects and modification of their occupation. The optical and transport properties of the doped P and N-films were found to depend sensitively on the amount of hydrogen and boron or phosphorus incorporation into the films as well as on their degree of crystallinity. Combination of the best intrinsic and doped films leads to PIN solar cell structures generating J(sc) of 13 mA/sq cm and V(oc) of between 0.85 to 0.95 volts. The efficiency of these devices, 5 to 6 percent, is limited by the low FF, typically about 50 percent. As a further test to the potential of this technology efficient tandem solar cell structures were fabricated, and device design concepts, such as the incorporation of optically reflective back contacts were tested.

  3. Systematic process development towards high performance transferred thin silicon solar cells based on epitaxially grown absorbers

    Science.gov (United States)

    Murcia Salazar, Clara Paola

    The value of thin crystalline silicon (c-Si) solar cells is the potential for higher performance compared to conventional wafer approaches. Thin silicon solar cells can outperform thick cells with the same material properties because the smaller active volume causes a reduced bulk recombination leading to higher voltages while efficient light trapping structures ensure all photons are absorbed. Efficiencies above 20+% can be achieved with less than 20um of c-Si with current silicon solar cell processing technologies. In a thin solar cell, factors that will lead to high efficiency include high minority carrier lifetime, low surface recombination, and good optical confinement. Independently optimizing surface optical and electrical properties in a thin solar cell can achieve this higher performance. In addition, re-utilizing a c-Si wafer with a process that allows optimization of both surfaces is a path to higher performance at lower cost. The challenge in the fabrication of this high performance concept is to separately analyze critical parameters through fabrication and transfer and establish the design rules for high performance. This work contributes to the design and systematic fabrication approach of a 20 mum thick epitaxial silicon solar cell. State-of-the-art thin absorbers of less than 30um have reported 655mV (on a textured front surface with antireflection coating), and efficiencies near 17%. We report near 640mV (on a planar front surface with antireflection coating) for 20 mum thick absorbers. It is found that previously reported efficiencies are tightly related to solar cell's active thickness. In the case of transferred solar cells, the thinnest epitaxial transferred cell reported is near 24 mum thick with an efficiency of 15.4% (transparent front handle, textured with ARC and metallic back reflector). Recently, a c-Si transferred solar cell of 43 mum has reported 19.1% efficiency (with a front texture and ARC with localized back contact and reflector

  4. Plasmonic silicon solar cells: impact of material quality and geometry

    NARCIS (Netherlands)

    Pahud, C.; Isabella, O.; Naqavi, A.; Haug, F.J.; Zeman, M.; Herzig, H.P.; Ballif, C.

    2013-01-01

    We study n-i-p amorphous silicon solar cells with light-scattering nanoparticles in the back reflector. In one configuration, the particles are fully embedded in the zinc oxide buffer layer; In a second configuration, the particles are placed between the buffer layer and the flat back electrode. We

  5. Junction studies on electrochemically fabricated p-n Cu(2)O homojunction solar cells for efficiency enhancement.

    Science.gov (United States)

    McShane, Colleen M; Choi, Kyoung-Shin

    2012-05-01

    p-n Cu(2)O homojunction solar cells were electrochemically fabricated by consecutively depositing an n-Cu(2)O layer on a p-Cu(2)O layer. In order to better understand the Fermi levels of the electrochemically grown polycrystalline p- and n-Cu(2)O layers and maximize the overall cell performance, the back and front contacts of the Cu(2)O homojunction cells were systematically changed and the I-V characteristics of the resulting cells were examined. The result shows that the intrinsic doping levels of the electrochemically prepared p-Cu(2)O and n-Cu(2)O layers are very low and they made almost Ohmic junctions with Cu metal with which previously studied p-Cu(2)O layers prepared by thermal oxidation of Cu foils are known to form Schottky junctions. The best cell performance (an η of 1.06%, a V(OC) of 0.621 V, an I(SC) of 4.07 mA cm(-2), and a fill factor (ff) of 42%) was obtained when the p-Cu(2)O layer was deposited on a commercially available ITO substrate as the back contact and a sputter deposited ITO layer was used as the front contact on the n-Cu(2)O layer. The unique features of the p-n Cu(2)O homojunction solar cell are discussed in comparison with other Cu(2)O-based heterojunction solar cells.

  6. Nanowire Solar Cells

    Science.gov (United States)

    Garnett, Erik C.; Brongersma, Mark L.; Cui, Yi; McGehee, Michael D.

    2011-08-01

    The nanowire geometry provides potential advantages over planar wafer-based or thin-film solar cells in every step of the photoconversion process. These advantages include reduced reflection, extreme light trapping, improved band gap tuning, facile strain relaxation, and increased defect tolerance. These benefits are not expected to increase the maximum efficiency above standard limits; instead, they reduce the quantity and quality of material necessary to approach those limits, allowing for substantial cost reductions. Additionally, nanowires provide opportunities to fabricate complex single-crystalline semiconductor devices directly on low-cost substrates and electrodes such as aluminum foil, stainless steel, and conductive glass, addressing another major cost in current photovoltaic technology. This review describes nanowire solar cell synthesis and fabrication, important characterization techniques unique to nanowire systems, and advantages of the nanowire geometry.

  7. Energy Conversion: Nano Solar Cell

    Science.gov (United States)

    Yahaya, Muhammad; Yap, Chi Chin; Mat Salleh, Muhamad

    2009-09-01

    Problems of fossil-fuel-induced climate change have sparked a demand for sustainable energy supply for all sectors of economy. Most laboratories continue to search for new materials and new technique to generate clean energy at affordable cost. Nanotechnology can play a major role in solving the energy problem. The prospect for solar energy using Si-based technology is not encouraging. Si photovoltaics can produce electricity at 20-30 c//kWhr with about 25% efficiency. Nanoparticles have a strong capacity to absorb light and generate more electrons for current as discovered in the recent work of organic and dye-sensitized cell. Using cheap preparation technique such as screen-printing and self-assembly growth, organic cells shows a strong potential for commercialization. Thin Films research group at National University Malaysia has been actively involved in these areas, and in this seminar, we will present a review works on nanomaterials for solar cells and particularly on hybrid organic solar cell based on ZnO nanorod arrays. The organic layer consisting of poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEHPPV) and [6, 6]-phenyl C61-butyric acid 3-ethylthiophene ester (PCBE) was spin-coated on ZnO nanorod arrays. ZnO nanorod arrays were grown on FTO glass substrates which were pre-coated with ZnO nanoparticles using a low temperature chemical solution method. A gold electrode was used as the top contact. The device gave a short circuit current density of 2.49×10-4 mA/cm2 and an open circuit voltage of 0.45 V under illumination of a projector halogen light at 100 mW/cm2.

  8. Method for contact resistivity measurements on photovoltaic cells and cell adapted for such measurement

    Science.gov (United States)

    Burger, Dale R. (Inventor)

    1986-01-01

    A method is disclosed for scribing at least three grid contacts of a photovoltaic cell to electrically isolate them from the grid contact pattern used to collect solar current generated by the cell, and using the scribed segments for determining parameters of the cell by a combination of contact end resistance (CER) measurements using a minimum of three equally or unequally spaced lines, and transmission line modal (TLM) measurements using a minimum of four unequally spaced lines. TLM measurements may be used to determine sheet resistance under the contact, R.sub.sk, while CER measurements are used to determine contact resistivity, .rho..sub.c, from a nomograph of contact resistivity as a function of contact end resistance and sheet resistivity under the contact. In some cases, such as the case of silicon photovoltaic cells, sheet resistivity under the contact may be assumed to be equal to the known sheet resistance, R.sub.s, of the semiconductor material, thereby obviating the need for TLM measurements to determine R.sub.sk.

  9. Nanostructures for Organic Solar Cells

    DEFF Research Database (Denmark)

    Goszczak, Arkadiusz Jarosław

    2016-01-01

    The experimental work in this thesis is focused on the fabrication of nanostructures that can be implemented in organic solar cell (OSC) architecture for enhancement of the device performance. Solar devices made from organic material are gaining increased attention, compared to their inorganic...... for organic solar cell applications, opening new patterning possibilities....

  10. Evolutionary process development towards next generation crystalline silicon solar cells : a semiconductor process toolbox application

    Science.gov (United States)

    John, J.; Prajapati, V.; Vermang, B.; Lorenz, A.; Allebe, C.; Rothschild, A.; Tous, L.; Uruena, A.; Baert, K.; Poortmans, J.

    2012-08-01

    Bulk crystalline Silicon solar cells are covering more than 85% of the world's roof top module installation in 2010. With a growth rate of over 30% in the last 10 years this technology remains the working horse of solar cell industry. The full Aluminum back-side field (Al BSF) technology has been developed in the 90's and provides a production learning curve on module price of constant 20% in average. The main reason for the decrease of module prices with increasing production capacity is due to the effect of up scaling industrial production. For further decreasing of the price per wattpeak silicon consumption has to be reduced and efficiency has to be improved. In this paper we describe a successive efficiency improving process development starting from the existing full Al BSF cell concept. We propose an evolutionary development includes all parts of the solar cell process: optical enhancement (texturing, polishing, anti-reflection coating), junction formation and contacting. Novel processes are benchmarked on industrial like baseline flows using high-efficiency cell concepts like i-PERC (Passivated Emitter and Rear Cell). While the full Al BSF crystalline silicon solar cell technology provides efficiencies of up to 18% (on cz-Si) in production, we are achieving up to 19.4% conversion efficiency for industrial fabricated, large area solar cells with copper based front side metallization and local Al BSF applying the semiconductor toolbox.

  11. Transparent solar cell window module

    Energy Technology Data Exchange (ETDEWEB)

    Chau, Joseph Lik Hang; Chen, Ruei-Tang; Hwang, Gan-Lin; Tsai, Ping-Yuan [Nanopowder and Thin Film Technology Center, ITRI South, Industrial Technology Research Institute, Tainan County 709 (China); Lin, Chien-Chu [I-Lai Acrylic Corporation, Tainan City (China)

    2010-03-15

    A transparent solar cell window module based on the integration of traditional silicon solar cells and organic-inorganic nanocomposite material was designed and fabricated. The transparent solar cell window module was composed of a nanocomposite light-guide plate and traditional silicon solar cells. The preparation of the nanocomposite light-guide plate is easy without modification of the traditional casting process, the nanoparticles sol can be added directly to the polymethyl methacrylate (PMMA) monomer syrup during the process. The solar energy collected by this window can be used to power up small household electrical appliances. (author)

  12. Accurate determination of interface trap state parameters by admittance spectroscopy in the presence of a Schottky barrier contact: Application to ZnO-based solar cells

    Science.gov (United States)

    Marin, Andrew T.; Musselman, Kevin P.; MacManus-Driscoll, Judith L.

    2013-04-01

    This work shows that when a Schottky barrier is present in a photovoltaic device, such as in a device with an ITO/ZnO contact, equivalent circuit analysis must be performed with admittance spectroscopy to accurately determine the pn junction interface recombination parameters (i.e., capture cross section and density of trap states). Without equivalent circuit analysis, a Schottky barrier can produce an error of ˜4-orders of magnitude in the capture cross section and ˜50% error in the measured density of trap states. Using a solution processed ZnO/Cu2O photovoltaic test system, we apply our analysis to clearly separate the contributions of interface states at the pn junction from the Schottky barrier at the ITO/ZnO contact so that the interface state recombination parameters can be accurately characterized. This work is widely applicable to the multitude of photovoltaic devices, which use ZnO adjacent to ITO.

  13. SEMICONDUCTOR DEVICES: Optimization of grid design for solar cells

    Science.gov (United States)

    Wen, Liu; Yueqiang, Li; Jianjun, Chen; Yanling, Chen; Xiaodong, Wang; Fuhua, Yang

    2010-01-01

    By theoretical simulation of two grid patterns that are often used in concentrator solar cells, we give a detailed and comprehensive analysis of the influence of the metal grid dimension and various losses directly associated with it during optimization of grid design. Furthermore, we also perform the simulation under different concentrator factors, making the optimization of the front contact grid for solar cells complete.

  14. Silicon heterojunction solar cells

    CERN Document Server

    Fahrner, W R; Neitzert, H C

    2006-01-01

    The world of today must face up to two contradictory energy problems: on the one hand, there is the sharply growing consumer demand in countries such as China and India. On the other hand, natural resources are dwindling. Moreover, many of those countries which still possess substantial gas and oil supplies are politically unstable. As a result, renewable natural energy sources have received great attention. Among these, solar-cell technology is one of the most promising candidates. However, there still remains the problem of the manufacturing costs of such cells. Many attempts have been made

  15. Carbon Nanotube Solar Cells

    OpenAIRE

    Klinger, Colin; Patel, Yogeshwari; Postma, Henk W. Ch.

    2012-01-01

    We present proof-of-concept all-carbon solar cells. They are made of a photoactive side of predominantly semiconducting nanotubes for photoconversion and a counter electrode made of a natural mixture of carbon nanotubes or graphite, connected by a liquid electrolyte through a redox reaction. The cells do not require rare source materials such as In or Pt, nor high-grade semiconductor processing equipment, do not rely on dye for photoconversion and therefore do not bleach, and are easy to fabr...

  16. Space solar cells - tradeoff analysis

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, M.R. [ISRO Satellite Centre, Bangalore (India). Power Systems Group

    2003-05-15

    This paper summarizes the study that had the objective to tradeoff space solar cells and solar array designs to determine the best choice of solar cell and array technology that would be more beneficial in terms of mass, area and cost for different types of space missions. Space solar cells, which are commercially now available in the market and to be available in the near future, were considered for this trade study. Four solar array designs: rigid, flexible, thin film flexible and concentrator solar arrays were considered for assessment. Performance of the solar cells along with solar array designs were studied for two types of space missions:geo synchronous orbit (GEO) and low earth orbit (LEO) spacecraft. The Solar array designs assumed were to provide 15 kW power for 15 years mission life in GEO and 5 kW power for 5 years mission life in LEO altitudes. To perform tradeoff analysis a spread sheet model was developed that calculates the size, mass and estimates the cost of solar arrays based on different solar cell and array technologies for given set of mission requirements. Comparative performance metrics (W/kg, W/m{sup 2}, kg/m{sup 2}, and $/W) were calculated for all solar arrays studied and compared, at the solar array subsystem level and also at the spacecraft system level. The trade analysis results show that high-efficiency multijunction solar cells bring lot of cost advantages for both types of missions. The trade study also shows that thin film solar cells with moderate efficiency with ultra lightweight flexible array design may become competitive with well-established single crystalline solar cell technologies in the future. (author)

  17. Space solar cells. Tradeoff analysis

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, M. Raja [Power Systems Group, Solar Panels Division, ISRO Satellite Centre, Bangalore 560017 (India)

    2003-05-15

    This paper summarizes the study that had the objective to tradeoff space solar cells and solar array designs to determine the best choice of solar cell and array technology that would be more beneficial in terms of mass, area and cost for different types of space missions. Space solar cells, which are commercially now available in the market and to be available in the near future, were considered for this trade study. Four solar array designs: rigid, flexible, thin film flexible and concentrator solar arrays were considered for assessment. Performance of the solar cells along with solar array designs were studied for two types of space missions: geo synchronous orbit (GEO) and low earth orbit (LEO) spacecraft. The Solar array designs assumed were to provide 15kW power for 15 years mission life in GEO and 5kW power for 5 years mission life in LEO altitudes. To perform tradeoff analysis a spread sheet model was developed that calculates the size, mass and estimates the cost of solar arrays based on different solar cell and array technologies for given set of mission requirements. Comparative performance metrics (W/kg, W/m{sup 2}, kg/m{sup 2}, and $/W) were calculated for all solar arrays studied and compared, at the solar array subsystem level and also at the spacecraft system level. The trade analysis results show that high-efficiency multijunction solar cells bring lot of cost advantages for both types of missions. The trade study also show that thin film solar cells with moderate efficiency with ultra lightweight flexible array design may become competitive with well-established single crystalline solar cell technologies in the future.

  18. Highly reflective rear surface passivation design for ultra-thin Cu(In,Ga)Se2 solar cells

    International Nuclear Information System (INIS)

    Al2O3 rear surface passivated ultra-thin Cu(In,Ga)Se2 (CIGS) solar cells with Mo nano-particles (NPs) as local rear contacts are developed to demonstrate their potential to improve optical confinement in ultra-thin CIGS solar cells. The CIGS absorber layer is 380 nm thick and the Mo NPs are deposited uniformly by an up-scalable technique and have typical diameters of 150 to 200 nm. The Al2O3 layer passivates the CIGS rear surface between the Mo NPs, while the rear CIGS interface in contact with the Mo NP is passivated by [Ga]/([Ga] + [In]) (GGI) grading. It is shown that photon scattering due to the Mo NP contributes to an absolute increase in short circuit current density of 3.4 mA/cm2; as compared to equivalent CIGS solar cells with a standard back contact. - Highlights: • Proof-of-principle ultra-thin CIGS solar cells have been fabricated. • The cells have Mo nano-particles (NPs) as local rear contacts. • An Al2O3 film passivates the CIGS rear surface between these nano-particles. • [Ga]/([Ga] + [In]) grading is used to reduce Mo-NP/CIGS interface recombination

  19. Applications of Laser Precisely Processing Technology in Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    According to the design method of laser resonator cavity, we optimized the primary parameters of resonator and utilized LD arrays symmetrically pumping manner to implementing output of the high-brightness laser in our laser cutter, then which was applied to precisely cutting the conductive film of CuInSe2 solar cells, the buried contact silicon solar cells' electrode groove, and perforating in wafer which is used to the emitter wrap through silicon solar cells. Laser processing precision was less than 40μm, the results have met solar cell's fabrication technology, and made finally the buried cells' conversion efficiency be improved from 18% to 21% .

  20. CIGS absorber layer with double grading Ga profile for highly efficient solar cells

    Science.gov (United States)

    Saadat, M.; Moradi, M.; Zahedifar, M.

    2016-04-01

    It is well-known that the band gap grading in CIGS solar cells is crucial for achieving highly efficient solar cells. We stimulate a CIGS solar cell and investigate the effects of the band gap grading on performance of the CIGS solar cell, where Ga/(Ga + In) ratio (GGI) at back (Cb) and front (Cf) of the absorber layer are considered constant. Our simulations show that by increasing the GGI at middle of CIGS absorber layer (Cm), the JSC decreases and VOC increases independent of the distance of the Cm from the back contact (Xm). For Cm lower than Cf, JSC increases and VOC decreases when the Xm shifts to the front of the CIGS layer. The behavior of JSC and VOC became reverse for the case of Cm greater than Cf. Almost in all of the structures, efficiency and FF have same behaviors. Our simulations show that the highest efficiency is obtained at Cm = 0.8 and Xm = 200 nm.

  1. Study of deep level defects of n+-CdS/p-CdTe solar cells

    Science.gov (United States)

    Kharangarh, Poonam Rani

    Among various photovoltaic materials, polycrystalline cadmium telluride thin film is now the most promising material, due to its low production cost excellent stability and reliability. Current-voltage and capacitance-voltage measurements of CdTe photovoltaic devices at different temperatures can provide valuable information about non-idealities in the n-p semiconductor junction. There are certain limitations which limit the efficiency of CdTe solar cells. There is no real distinction between defects and impurities in CdTe solar cells as both act as beneficial dopants or detrimental traps unlike Si where intentional shallow dopants and traps are distinctly different. Therefore, the role of defect states on CdTe solar cell performance, the effect of processing on defect states, and simple and effective characterization techniques must be investigated and identified. In this research the thin film n+-CdS/p-CdTe solar cells made with evaporated Cu as a primary back contact, are characterized by using the temperature dependence of the reverse bias diode current (J-V-T) to determine the energy levels of deep defects. The results of the J-V-T measurements on solar cells made at NJIT show that while modest amounts of Cu enhance cell performance, an excessive high temperature annealing step degrades device quality and reduces efficiency. This work addresses the error that can be introduced during defect energy level estimation if the temperature dependence of the carrier capture cross-section is neglected. Therefore, the location of traps is derived using a Shockley-Read-Hall recombination model with modified assumptions. A Cu-related deep level defect with activation energy of 0.57eV is observed for Cu evaporated back contact cells and an intrinsic defect with activation energy 0.89eV is found. Frequency dispersion in Capacitance-Voltage measurements confirms the presence of Cu-related deep level traps for cells with a Cu evaporated back contact, whereas no such defects

  2. Cascade Organic Solar Cells

    KAUST Repository

    Schlenker, Cody W.

    2011-09-27

    We demonstrate planar organic solar cells consisting of a series of complementary donor materials with cascading exciton energies, incorporated in the following structure: glass/indium-tin-oxide/donor cascade/C 60/bathocuproine/Al. Using a tetracene layer grown in a descending energy cascade on 5,6-diphenyl-tetracene and capped with 5,6,11,12-tetraphenyl- tetracene, where the accessibility of the π-system in each material is expected to influence the rate of parasitic carrier leakage and charge recombination at the donor/acceptor interface, we observe an increase in open circuit voltage (Voc) of approximately 40% (corresponding to a change of +200 mV) compared to that of a single tetracene donor. Little change is observed in other parameters such as fill factor and short circuit current density (FF = 0.50 ± 0.02 and Jsc = 2.55 ± 0.23 mA/cm2) compared to those of the control tetracene-C60 solar cells (FF = 0.54 ± 0.02 and Jsc = 2.86 ± 0.23 mA/cm2). We demonstrate that this cascade architecture is effective in reducing losses due to polaron pair recombination at donor-acceptor interfaces, while enhancing spectral coverage, resulting in a substantial increase in the power conversion efficiency for cascade organic photovoltaic cells compared to tetracene and pentacene based devices with a single donor layer. © 2011 American Chemical Society.

  3. Solar cell materials developing technologies

    CERN Document Server

    Conibeer, Gavin J

    2014-01-01

    This book presents a comparison of solar cell materials, including both new materials based on organics, nanostructures and novel inorganics and developments in more traditional photovoltaic materials. It surveys the materials and materials trends in the field including third generation solar cells (multiple energy level cells, thermal approaches and the modification of the solar spectrum) with an eye firmly on low costs, energy efficiency and the use of abundant non-toxic materials.

  4. Thermal Management of Solar Cells

    OpenAIRE

    Saadah, Mohammed Ahmed

    2013-01-01

    The focus on solar cells as a source of photovoltaic energy is rapidly increasing nowadays. The amount of sun's energy entering earth surface in one hour is more than the world consume in one year. The photovoltaic market has been increasing by more than 20% annually since 2002. Improving solar cells aims at increasing the power conversion efficiency and reducing manufacturing costs. Crystalline silicon is the most commonly used material in making solar cells with more than 90% market use. So...

  5. Diffused quantum well solar cell

    OpenAIRE

    Lee, ASW; Li, EH; Cheng, Y

    1995-01-01

    An alternative multi-bandgap solar cell made of diffused quantum well (DFQW) as the absorber is proposed here. The modeling of the spectral response and energy conversion efficiency of the solar cell will be shown. Significant enhancement in energy conversion efficiency is demonstrated when compared to that of the single bandgap cells.

  6. Bifacial tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wojtczuk, Steven J.; Chiu, Philip T.; Zhang, Xuebing; Gagnon, Edward; Timmons, Michael

    2016-06-14

    A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.

  7. Dye Sensitized Solar Cell, DSSC

    Directory of Open Access Journals (Sweden)

    Pongsatorn Amornpitoksuk

    2003-07-01

    Full Text Available A dye sensitized solar cell is a new type of solar cell. The operating system of this solar cell type is similar to plant’s photosynthesis process. The sensitizer is available for absorption light and transfer electrons to nanocrystalline metal oxide semiconductor. The ruthenium(II complexes with polypyridyl ligands are usually used as the sensitizers in solar cell. At the present time, the complex of [Ru(2,2',2'’-(COOH3- terpy(NCS3] is the most efficient sensitizer. The total photon to current conversion efficiency was approximately 10% at AM = 1.5.

  8. Space Solar Cell Characterization Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Measures, characterizes, and analyzes photovoltaic materials and devices. The primary focus is the measurement and characterization of solar cell response...

  9. Review of the Potential of the Ni/Cu Plating Technique for Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Atteq ur Rehman

    2014-02-01

    Full Text Available Developing a better method for the metallization of silicon solar cells is integral part of realizing superior efficiency. Currently, contact realization using screen printing is the leading technology in the silicon based photovoltaic industry, as it is simple and fast. However, the problem with metallization of this kind is that it has a lower aspect ratio and higher contact resistance, which limits solar cell efficiency. The mounting cost of silver pastes and decreasing silicon wafer thicknesses encourages silicon solar cell manufacturers to develop fresh metallization techniques involving a lower quantity of silver usage and not relying pressing process of screen printing. In recent times nickel/copper (Ni/Cu based metal plating has emerged as a metallization method that may solve these issues. This paper offers a detailed review and understanding of a Ni/Cu based plating technique for silicon solar cells. The formation of a Ni seed layer by adopting various deposition techniques and a Cu conducting layer using a light induced plating (LIP process are appraised. Unlike screen-printed metallization, a step involving patterning is crucial for opening the masking layer. Consequently, experimental procedures involving patterning methods are also explicated. Lastly, the issues of adhesion, back ground plating, process complexity and reliability for industrial applications are also addressed.

  10. Solar cell experiments on the NTS-1 satellite

    International Nuclear Information System (INIS)

    Twelve solar cell experiments were on the Naval Research Laboratory TIMATION III (NTS-1) satellite on 14 July 1974, into a 13,620 km circular orbit at an inclination of 1250. The experiment comprises: two ohm-cm n/p, lithium-diffused p/n, violet n/p, p+ back surface field, and ultra-thin wrap-around contact cells. During the 5 year life of the satellite, the experiments will be exposed to radiation equivalent to 2 x 1015 1-MeV electron cm-2 and to nearly 5500 thermal cycles. After 261 days in orbit the loss in power ranged from 15.0 to 24.4 percent. Some of the radiation damage in the two lithium cell panels annealed temporarily between days 100 and 200 as the panel temperatures warmed up. The power degradation rate of the two ohm-cm solar panel can be fitted by a fluence of approximately 1.2 x 1014 1-MeV e/cm2-day

  11. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

  12. Modeling of Silicon Heterojunction Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Luppina, P.; Lugli, P.; Goodnick, S.

    2015-06-14

    Here we present modeling results on crystalline Si/amorphous Si (a-Si) heterojunction solar cells using Sentaurus including various models for defect states in the a-Si barriers, as well as explicit models for the ITO emitter contact. We investigate the impact of the band offsets and barrier heights of the a-Si/c-Si interface, particularly in terms of the open circuit voltage. It is also shown that the solar cell performance is sensitively dependent on the quality of the a-Si in terms of defect states and their distribution, particularly on the emitter side. Finally, we have investigate the role of tunneling and thermionic emission across the heterointerface in terms of transport from the Si to the ITO contact layer

  13. Failure Mode Transition in Air-Backed Plates from Near Contact Underwater Explosions

    Directory of Open Access Journals (Sweden)

    Mark J. Riley

    2010-01-01

    Full Text Available Recent experiments involving near-contact underwater explosions on air-backed plates suggest the following failure mode categories: (1 holing and petaling, (2 complete or partial edge tearing due to shock only, (3 complete or partial edge tearing due to shock and bubble collapse, and (4 large deformation without rupture. Finite-element analysis was used to further investigate the detailed response and failure of the plates, and determine the limit between center plate holing and edge failure. When compared with experimental results, finite-elements showed good agreement with the failure modes of the plates and reasonable agreement with the experimental deformations. It was found that the linear interaction criteria (LIC failure between plastic strain and through-thickness shear stress produced results closer to experiments than the quadratic interaction criteria (QIC. For the 18~gauge specimens it was found that the through-thickness shear dominated the failure initiation for very close proximity charges, with the direct strain becoming dominant as the standoff was increased. For the thinner 20 and 22 gauge plates the direct strain was always found to be the dominant factor in the failure criteria.

  14. Carbon nanotube solar cells.

    Directory of Open Access Journals (Sweden)

    Colin Klinger

    Full Text Available We present proof-of-concept all-carbon solar cells. They are made of a photoactive side of predominantly semiconducting nanotubes for photoconversion and a counter electrode made of a natural mixture of carbon nanotubes or graphite, connected by a liquid electrolyte through a redox reaction. The cells do not require rare source materials such as In or Pt, nor high-grade semiconductor processing equipment, do not rely on dye for photoconversion and therefore do not bleach, and are easy to fabricate using a spray-paint technique. We observe that cells with a lower concentration of carbon nanotubes on the active semiconducting electrode perform better than cells with a higher concentration of nanotubes. This effect is contrary to the expectation that a larger number of nanotubes would lead to more photoconversion and therefore more power generation. We attribute this to the presence of metallic nanotubes that provide a short for photo-excited electrons, bypassing the load. We demonstrate optimization strategies that improve cell efficiency by orders of magnitude. Once it is possible to make semiconducting-only carbon nanotube films, that may provide the greatest efficiency improvement.

  15. Efficiency improvement in thin film solar cell devices with oxygen containing absorber layer.

    OpenAIRE

    Emziane, M.; Durose, K; Halliday, D.P.; Bosio, N.; Romeo, N.

    2005-01-01

    The CdTe/CdS solar cell devices were grown using a dry process consisting of sputtering for the transparent conducting oxide and CdS window layers, and close-space sublimation for CdTe absorber layer. These devices were back contacted using Mo/Sb2Te3 sputtered layers following the CdCl2 activation process carried out in air. It was shown that when oxygen is intentionally introduced in the CdTe layer during its growth, this leads to a significant improvement in all the device parameters yieldi...

  16. Cu2ZnSn(S,Se)4 solar cells based on chemical bath deposited precursors

    International Nuclear Information System (INIS)

    A low-cost method has been developed to fabricate Cu2ZnSn(S,Se)4 solar cells. By this method, firstly SnS, CuS, and ZnS layers are successively deposited on a molybdenum/soda lime glass (Mo/SLG) substrate by chemical bath deposition. The Cu2ZnSn(S,Se)4 thin films are obtained by annealing the precursor in a selenium atmosphere utilizing a graphite box in the furnace. The obtained Cu2ZnSn(S,Se)4 thin films show large crystalline grains. By optimizing the preparation process, Cu2ZnSn(S,Se)4 solar cells with efficiencies up to 4.5% are obtained. The results imply that the Cu2ZnSn(S,Se)4/CdS interface and the back contact may be limiting factors for solar cell efficiency. - Highlights: • A chemical bath deposition method is developed to prepare Cu2ZnSn(S,Se)4 thin films. • The Cu2ZnSn(S,Se)4 thin films show good crystallization. • Solar cells with efficiencies up to 4.5% can be prepared based on the Cu2ZnSn(S,Se)4 layer. • The limiting factors for the solar cell efficiency are analyzed

  17. Coupling flexible solar cell with parabolic trough solar-concentrator-prototype design and performance

    Science.gov (United States)

    Panin, Alexander; Bergquist, Jonathon

    2007-10-01

    Solar cells are still too expensive (5-20/watt) to compete with traditional fossil fuel power generating methods (˜1/watt). Parabolic trough solar concentrator has the advantage of modest concentration ratio (10-100) which is well suited for coupling with solar cell. Thus using small area solar cell placed in the focal line of parabolic trough may be economically viable alternative to flat solar panels. We experiment with flexible solar cell (backed by water cooling pipe) placed in the focus of parabolic trough reflector. Another advantage of parabolic trough concentrator is very relaxed tracking requirement. For example, east-west oriented concentrator (aligned with the ecliptic plane) does not even need any tracking during core 4-6 hours around noon (when maximum illumination is available). The design and the performance of the prototype, as well as possible economical benefits of full scale projects are discussed in the presentation.

  18. Characterization and Modeling of CdS/CdTe Heterojunction Thin-Film Solar Cell for High Efficiency Performance

    Directory of Open Access Journals (Sweden)

    Hamid Fardi

    2013-01-01

    Full Text Available Device simulation is used to investigate the current-voltage efficiency performance in CdTe/CdS photovoltaic solar cell. The role of several limiting factors such as back contact Schottky barrier and its relationship to the doping density and layer thickness is examined. The role of surface recombination velocity at back contact interface and extended CdTe layer is included. The base CdS/CdTe experimental device used in this study shows an efficiency of 16-17%. Simulation analysis is used to optimize the experimental base device under AM1.5 solar spectrum. Results obtained indicate that higher performance efficiency may be achieved by adding and optimizing an extended CdTe electron reflector layer at the back Schottky contact. In the optimization of the CdS/CdTe cell an extended electron reflector region with a barrier height of 0.1 eV and a doping density of  cm−3 with an optimum thickness of 100 nm results in best cell efficiency performance of 19.83% compared with the experimental data.

  19. Enhancing Light-Trapping Properties of Amorphous Si Thin-Film Solar Cells Containing High-Reflective Silver Conductors Fabricated Using a Nonvacuum Process

    Directory of Open Access Journals (Sweden)

    Jun-Chin Liu

    2014-01-01

    Full Text Available We proposed a low-cost and highly reflective liquid organic sheet silver conductor using back contact reflectors in amorphous silicon (a-Si single junction superstrate configuration thin-film solar cells produced using a nonvacuum screen printing process. A comparison of silver conductor samples with vacuum-system-sputtered silver samples indicated that the short-circuit current density (Jsc of sheet silver conductor cells was higher than 1.25 mA/cm2. Using external quantum efficiency measurements, the sheet silver conductor using back contact reflectors in cells was observed to effectively enhance the light-trapping ability in a long wavelength region (between 600 nm and 800 nm. Consequently, we achieved an optimal initial active area efficiency and module conversion efficiency of 9.02% and 6.55%, respectively, for the a-Si solar cells. The results indicated that the highly reflective sheet silver conductor back contact reflector layer prepared using a nonvacuum process is a suitable candidate for high-performance a-Si thin-film solar cells.

  20. An Introduction to Solar Cells

    Science.gov (United States)

    Feldman, Bernard J.

    2010-01-01

    Most likely, solar cells will play a significant role in this country's strategy to address the two interrelated issues of global warming and dependence on imported oil. The purpose of this paper is to present an explanation of how solar cells work at an introductory high school, college, or university physics course level. The treatment presented…

  1. Silicon-on-ceramic solar cell development. Solar cell development for the cell development task of the Low-Cost Solar Array Project. Quarterly report No. 1, February 15--June 30, 1978

    Energy Technology Data Exchange (ETDEWEB)

    Chapman, P W; Grung, B L; Zook, J D

    1978-07-30

    The objective of this program is to investigate unique cell processing/design approaches to the successful fabrication of high-performance solar cells on silicon-on-ceramic (SOC) material. The work in the cell development area consists of two broad categories of activities: (1) the development of standard cell processing techniques, and (2) the investigation of novel device design approaches. The first area of activity has to do with the development of processing techniques for use with silicon dipped on ''slotted'' ceramic substrates. This embodiment allows us to make contact to the back surface of the silicon, thereby minimizing the front surface contact area. The second activity area is initially concerned with producing a ''stripe'' geometry cell on an unslotted ceramic substrate. The idea here is to expose the base layer for electrical contact on the top surface of the substrate and make up for the lost cell area by using an optical collector. Progress is reported.

  2. A New Technique to Produce Electricity Using Solar Cell in Aspect of Bangladesh: Dye-Sensitized Solar Cell (DSSC and It’s Prospect

    Directory of Open Access Journals (Sweden)

    M. F. Ali

    2014-09-01

    Full Text Available The Bangladesh is a developing country where electricity crisis is the most serious problem now-a-days. In order to meet electricity demand of our country we need to change the procedure of electricity production. For that we have to implement our renewable energy resources properly like solar cell. The dye sensitized solar cell (DSSCs is another new method to produce electricity which is more cost effective and also efficient comparing conventional silicon solar cell. When the visible light is absorbed by the thin film such as TiO2, an electron is injected by the excited sensitizer molecules into the conduction band of that thin film (TiO2. These electrons are then transported toward and collected by a back-contact electrode which travel in a big circle and create an electrical circuit which powers a device. In this paper we tried to describe the new DSSCs technology compared to conventional silicon solar cell according to the electricity demand of Bangladesh.

  3. Upconversion in solar cells.

    Science.gov (United States)

    van Sark, Wilfried Gjhm; de Wild, Jessica; Rath, Jatin K; Meijerink, Andries; Schropp, Ruud Ei

    2013-02-15

    The possibility to tune chemical and physical properties in nanosized materials has a strong impact on a variety of technologies, including photovoltaics. One of the prominent research areas of nanomaterials for photovoltaics involves spectral conversion. Modification of the spectrum requires down- and/or upconversion or downshifting of the spectrum, meaning that the energy of photons is modified to either lower (down) or higher (up) energy. Nanostructures such as quantum dots, luminescent dye molecules, and lanthanide-doped glasses are capable of absorbing photons at a certain wavelength and emitting photons at a different (shorter or longer) wavelength. We will discuss upconversion by lanthanide compounds in various host materials and will further demonstrate upconversion to work for thin-film silicon solar cells.

  4. 3D-printed concentrator arrays for external light trapping on thin film solar cells

    NARCIS (Netherlands)

    van Dijk, Lourens; Marcus, E. A. Pepijn; Oostra, A. Jolt; Schropp, Ruud E. I.; Di Vece, Marcel

    2015-01-01

    After our recent demonstration of a 3D-printed external light trap on a small solar cell, we now consider its potential for large solar panels. An external light trap consists of a parabolic concentrator and a spacer that redirects the photons that are reflected by the solar cell back towards the so

  5. Study of spatially resolved impurity diffusion in CdTe solar cells using voltage dependent quantum efficiency

    International Nuclear Information System (INIS)

    The performance stability of CdTe/CdS solar cells is strongly determined by diffusion of impurities from the back contact into the absorber layer and hetero-junction. Impurity migration changes the effective carrier concentration and barriers in the device by compensation of donors or acceptors and by creation of defect centres. The CdS window layer is particularly affected by this phenomenon, since the impurities tend to accumulate there. This can be characterised by measuring the voltage dependent, the so called apparent quantum efficiency (AQE) in the blue wavelength region, while the back contact can be analysed by the AQE in the IR. CdTe/CdS cells with different back contact materials have been stressed in different conditions and ambiences. When thermally stressed in presence of oxygen, enhanced AQEs were observed for cells containing Cu, while cells containing Sb showed negligible changes, in the UV range as well as in the IR range. In comparison, vacuum-stressed Cu containing cells showed lower AQEs, but still higher than non-stressed cells. Results of the stressing tests for different materials and in different conditions have been analysed and interpreted using the recently developed model of a modulated barrier in the CdS bulk

  6. Progress in polymer solar cell

    Institute of Scientific and Technical Information of China (English)

    LI LiGui; LU GuangHao; YANG XiaoNiu; ZHOU EnLe

    2007-01-01

    This review outlines current progresses in polymer solar cell. Compared to traditional silicon-based photovoltaic (PV) technology, the completely different principle of optoelectric response in the polymer cell results in a novel configuration of the device and more complicated photovoltaic generation process. The conception of bulk-heterojunction (BHJ) is introduced and its advantage in terms of morphology is addressed. The main aspects including the morphology of photoactive layer, which limit the efficiency and stability of polymer solar cell, are discussed in detail. The solutions to boosting up both the efficiency and stability (lifetime) of the polymer solar cell are highlighted at the end of this review.

  7. Photon management in solar cells

    CERN Document Server

    Rau, Uwe; Gombert, Andreas

    2015-01-01

    Written by renowned experts in the field of photon management in solar cells, this one-stop reference gives an introduction to the physics of light management in solar cells, and discusses the different concepts and methods of applying photon management. The authors cover the physics, principles, concepts, technologies, and methods used, explaining how to increase the efficiency of solar cells by splitting or modifying the solar spectrum before they absorb the sunlight. In so doing, they present novel concepts and materials allowing for the cheaper, more flexible manufacture of solar cells and systems. For educational purposes, the authors have split the reasons for photon management into spatial and spectral light management. Bridging the gap between the photonics and the photovoltaics communities, this is an invaluable reference for materials scientists, physicists in industry, experimental physicists, lecturers in physics, Ph.D. students in physics and material sciences, engineers in power technology, appl...

  8. Impact of sulfur and gallium gradients on the performance of thin film Cu(In,Ga)(Se,S){sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lavrenko, Tetiana, E-mail: lavrenko@hs-ulm.de; Ott, Thomas; Walter, Thomas

    2015-05-01

    A graded bandgap structure proved to be an important factor for increasing an overall efficiency of the chalcopyrite-based thin film solar cells. This contribution is focused on the effects of sulfur incorporation into the surface region of industrial sequentially grown Cu(In,Ga)(Se,S){sub 2} absorbers. A front grading due to such a sulfurization step enhances the bandgap in the space charge region, whereas the bulk of the absorber exhibits a lower bandgap which determines absorption and photocurrent. It will be demonstrated that such graded bandgap structures allow separating the absorption and recombination processes, therefore resulting in highly efficient solar cells with improved open circuit voltages without compromising short circuit currents. Moreover, a segregation of a gallium rich layer at the back contact as a result of sequential deposition reactions is discussed in terms of a back contact passivation that prevents injection of electrons to the back contact and suppresses phototransistor effects often observed at low temperatures. Furthermore, an influence of longer diffusion times on gallium distribution throughout the absorber layer has been investigated. High temperature deposition processes for prolonged time enhance gallium diffusion towards the absorber/buffer interface therefore leading to an overall increase of the absorber bandgap energy when both recombination and absorption processes are being affected. - Highlights: • Separation of the recombination and absorption processes due to S incorporation • A gallium-rich layer at the back contact suppresses phototransistor effects. • Ga-diffusion at high temperature affects both electrical and optical bandgaps.

  9. Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy

    Science.gov (United States)

    Lai, Donny; Tan, Yew Heng; Gunawan, Oki; He, Lining; Seng Tan, Chuan

    2011-07-01

    We report an alternative approach to grow phosphorus-doped epitaxial silicon emitter by rapid thermal chemical vapor deposition at low temperature (T ≥ 700 °C). A power conversion efficiency (PCE) of (6.6 ± 0.3)% and a pseudo PCE of (10.2 ± 0.2)% has been achieved for the solar cell with epi-emitter grown at 700 °C, in the absence of surface texturization, antireflective coating, and back surface field enhancement, without considering front contact shading. Secondary ion mass spectroscopy revealed that lower temperature silicon epitaxy yields a more abrupt p-n junction, suggesting potential applications for radial p-n junction wire array solar cells.

  10. Results of the first 150 days of the NTS-1 solar cell experiments

    Science.gov (United States)

    Statler, R. L.

    1974-01-01

    Twelve solar cell experiments were on the Naval Research Laboratory NTS-1 satellite launched on 14 July 1974, into a 13,260 km circular orbit at an inclination of 125 deg. The experiment comprises: 2 ohm-cm n/p, lithium-diffused p/n, violet n/p, p(+) back surface field, and ultra-thin wrap around contact cells. The short-circuit current of the experiments ranged from 2 to 12 percent higher in space than under solar simulators. During the 5 year life of the satellite, the experiments will be exposed to radiation equivalent to 2 x 10 to the 15th power 1-MeV electron cm/2 and to nearly 5500 thermal cycles.

  11. Device simulation of cuprous oxide heterojunction solar cells

    Science.gov (United States)

    Takiguchi, Yuki; Miyajima, Shinsuke

    2015-11-01

    We developed a device simulation model of cuprous oxide (Cu2O)-based heterojunction solar cells. The developed model well reproduces the reported experimental current density-voltage characteristics and the external quantum efficiency results. By using the model, we explored structures for high-efficiency Cu2O-based heterojunction solar cells. It was found that the electron affinity of the buffer layer between transparent conducting oxide and Cu2O significantly affects solar cell performance. Surface recombination on the rear side of the device can be suppressed by employing a highly doped back surface layer. Our device simulation demonstrates a conversion efficiency of 16% without any optical confinement structure.

  12. Plastic Solar Cells: Understanding the Special Additive

    OpenAIRE

    van Franeker, Jacobus J.; Janssen, René A. J.

    2015-01-01

    Solar cells use freely available sunlight to make electricity. At the present time, solar electricity does not come cheap, because solar panels are rather expensive. Now imagine that we could reduce costs by printing solar panels like we print newspapers! We can do just that with plastic solar cells. In this article, we explain the basic working principles of these novel plastic solar cells and then show how a stunning threefold increase in solar energy efficiency can be achieved by including...

  13. Applications of laser precisely processing technology in solar cells

    Science.gov (United States)

    Wang, Hong-Jie; Cheng, Hua; Xie, Kang-Wen; Lu, Fu-Yun; Du, Yong-Chao

    2007-09-01

    According to the design method of laser resonator cavity, we optimized the primary parameters of resonator and utilized LD arrays symmetrically pumping manner to implementing output of the high-brightness laser in our laser cutter, then which was applied to precisely cutting the conductive film of CuInSe2 solar cells, the buried contact silicon solar cells’ electrode groove, and perforating in wafer which is used to the emitter wrap through silicon solar cells. Laser processing precision was less than 40 μ m, the results have met solar cell’s fabrication technology, and made finally the buried cells’ conversion efficiency be improved from 18% to 21%.

  14. Characterization of solar cells for space applications. Volume 12: Electrical characteristics of Solarex BSF, 2-ohm-cm, 50-micron solar cells (1978 pilot line) as a function of intensity, temperature, and irradiation

    Science.gov (United States)

    Anspaugh, B. E.; Beckert, D. M.; Downing, R. G.; Miyahira, T. F.; Weiss, R. S.

    1980-01-01

    Electrical characteristics of Solarex back-surface-field, 2-ohm-cm, 50-micron N/P silicon solar cells are presented in graphical and tabular format as a function of solar illumination intensity, temperature, and irradiation.

  15. Development of monocrystalline CdTe solar cells for terrestrial applications, especially for optical concentrators

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, H.; Fuessl, B.; Seipp, E.; Thiel, R.

    1981-01-01

    During the first phase of the contract most of the work was done in order to optimise the most important structural elements of the solar cells, which were produced on the base of crystalline CdTe. Two approaches in development of such cells were made: n-CdTe crystals were covered with a p-type heterolayer as a window for sunlight; ZnTe was evaporated as a p-type layer. p-CdTe crystals were covered with a n-type heterolayer as a window. Here, CdS evaporation layers and indium-tin-oxide (ITO) sputtered layers were applied. Within the first approach the realisation of ZnTe-layers simultaneously highly conductive and transparent was tried by using numerous dopants. Within the second approach, the development of p-CdTe/n-CdS solar cells, the resistances of the ohmic contacts on the back of the p-CdTe wafers were a major problem. We found some ways of preparing ohmic contacts of acceptable contact resistance, but an ideal problem solution is lacking still. We found a dependence of the contact resistance on the p-CdTe doping concentration. Solar cells made from p-CdTe crystals covered with n/sup +/-CdS attained an open circuit voltage of 655 mV and a short circuit current density of 13.8 mA/cm/sup 2/ in a 100 mW/cm/sup 2/ light. Assuming a sufficiently low series resistance we expect an efficiency of about 6 percent. Besides the n/sup +/-CdS layers n/sup +/-ITO-layers (indium-tin-oxide) were deposited on p-CdTe by sputtering. These cells exhibit a short circuit density a little higher but a lower open circuit voltage than the heterosolarcells with n/sup +/-CdS.

  16. Admittance spectroscopy of CdTe/CdS solar cells subjected to varied nitric-phosphoric etching conditions.

    OpenAIRE

    Proskuryakov, Y. Y.; Durose, K; Taele, B.; Welch, G. P.; Oelting, S.

    2007-01-01

    In this work we investigate the electric and structural properties of CdTe/CdS solar cells subjected to a nitric-phosphoric (NP) acid etching procedure, employed for the formation of a Te-rich layer before back contacting. The etching time is used as the only variable parameter in the study, while admittance spectroscopy is employed for the characterization of the cells' electric properties as well as for the analysis of the defect energy levels. Particular attention was also given to the cha...

  17. Cu-doped CdS and its application in CdTe thin film solar cell

    Directory of Open Access Journals (Sweden)

    Yi Deng

    2016-01-01

    Full Text Available Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  18. Cu-doped CdS and its application in CdTe thin film solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Yi [School of Automation, Wuhan University of Technology, Wuhan, Hubei 430070 (China); College of Electronic and Information Engineering, Hankou University, Wuhan, Hubei 430212 (China); Yang, Jun; Yang, Ruilong; Shen, Kai; Wang, Dezhao [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Wang, Deliang, E-mail: eedewang@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026 (China)

    2016-01-15

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the V{sub Cd{sup −}} and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl{sub 2} annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  19. Cu-doped CdS and its application in CdTe thin film solar cell

    Science.gov (United States)

    Deng, Yi; Yang, Jun; Yang, Ruilong; Shen, Kai; Wang, Dezhao; Wang, Deliang

    2016-01-01

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd- and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  20. A comparative study on the performance of Kesterite based thin film solar cells using SCAPS simulation program

    Science.gov (United States)

    Simya, O. K.; Mahaboobbatcha, A.; Balachander, K.

    2015-06-01

    A comparative study of thin film solar cells based on CZTS, CZTSe, and CZTSSe (Copper Zinc Tin Sulphur Selenium) absorbers layers were simulated with Cadmium Sulphide (CdS) as buffer layer and Zinc Oxide (ZnO) as window layer using a solar cell capacitance simulator (SCAPS). The influences of series resistance, band to band recombination, defects and interfaces, thickness of (CZTS|CZTSe|CZTSSe) absorber layer, (CdS) buffer layer and transparent conductive oxide layer (ZnO) on the photovoltaic cell parameters were studied in detail. Improvements in efficiency were achieved by changing the back contact metal work function (BMWF) and choosing the flat band option in SCAPS software. Based on the best possible optimisation, an efficiency (η) of 12.03%, 13.16% and 15.77% were obtained for CZTS, CZTSe, and CZTSSe respectively. The performance of thin film photovoltaic devices (TFPV), for Mo back contact before optimisation and the SCAPS simulated values (flat band) after optimisation were described in detail to have in-depth understanding for better design of experiments (DOE) to obtain high efficiency solar cells.

  1. Cu-doped CdS and its application in CdTe thin film solar cell

    International Nuclear Information System (INIS)

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures

  2. Black silicon solar cells with black bus-bar strings

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Tang, Peter Torben; Mizushima, Io;

    2016-01-01

    We present the combination of black silicon texturing and blackened bus-bar strings as a potential method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon was realized by maskless reactive ion etching resulting in total, average reflectance...... below 0.5% across a 156x156 mm2 silicon wafer. Four different methods to obtain blackened bus-bar strings were compared with respect to reflectance, and two of these methods (i.e., oxidized copper and etched solder) were used to fabricate functional allblack solar 9-cell panels. The black bus-bars (e.......g., by oxidized copper) have a reflectance below 3% in the entire visible wavelength range. The combination of black silicon cells and blackened bus-bars results in aesthetic, all-black panels based on conventional, front-contacted solar cells without compromising efficiency....

  3. Fundamentals of thin solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yablonovitch, E. [Univ. of California, Los Angeles, CA (United States)

    1995-08-01

    It is now widely recognized that thin solar cells can present certain advantages for performance and cost. This is particularly the case when light trapping in the semiconductor film is incorporated, as compensation for the diminished single path thickness of the solar cell. In a solar cell thinner than a minority carrier diffusion length, the current collection is of course very easy. More importantly the concentration of an equivalent number of carriers in a thinner volume results in a higher Free Energy, or open circuit voltage. This extra Free Energy may be regarded as due to the concentration factor, just as it would be for photons, electrons, or for any chemical species. The final advantage of a thin solar cell is in the diminished material usage, a factor of considerable importance when we consider the material cost of the high quality semiconductors which we hope to employ.

  4. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

    KAUST Repository

    Zheng, Maxwell

    2015-08-25

    The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

  5. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  6. Local device parameter extraction of a concentrator photovoltaic cell under solar spot illumination

    Energy Technology Data Exchange (ETDEWEB)

    Munji, M.K.; Okullo, W.; van Dyk, E.E.; Vorster, F.J. [Physics Department, Nelson Mandela Metropolitan University, P O Box 77000, Port Elizabeth 6031 (South Africa)

    2010-12-15

    Focused sunlight can act as a localized source of excess minority carriers in a solar cell. Current signal generated by these carriers gives considerable information about the electrical properties of the cell's material. Point by point current-voltage data were measured for a back point-contact concentrator photovoltaic cell when illuminated by focused sunlight. Two numerical curve fitting procedures: a non-linear two-point interval division and particle swarm optimization algorithm were then applied to extract local parameters (i.e. as function of position) from the current-voltage data at each measurement point. Extracted parameters plotted yields relative spatial information about the electrical properties of a solar cell in a two or three dimensional mapping. The curve fitting routines applied to current-voltage data reveal that performance parameters: short circuit current, open circuit voltage, maximum power and fill factor show distinct variations in the vicinity of the observed current reducing feature. The relative values of the diode ideality factors, series resistance, shunt resistance and reverse saturation currents from both methods showed no significant measurable features that could be distinguished. This shows that the observed reduction in photo-induced current was due to severe recombination in the bulk or around the highly diffused point contacts and not the quality of the multiple p-n junctions of the cell. These approaches allow one to obtain a set of parameters at each local point on the cell which are reasonable and representative of the physical system. (author)

  7. Low cost silicon-on-ceramic photovoltaic solar cells

    Science.gov (United States)

    Koepke, B. G.; Heaps, J. D.; Grung, B. L.; Zook, J. D.; Sibold, J. D.; Leipold, M. H.

    1980-01-01

    A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

  8. Thin film solar cell inflatable ultraviolet rigidizable deployment hinge

    Science.gov (United States)

    Simburger, Edward J. (Inventor); Matsumoto, James H. (Inventor); Giants, Thomas W. (Inventor); Garcia, III, Alec (Inventor); Perry, Alan R. (Inventor); Rawal, Suraj (Inventor); Marshall, Craig H. (Inventor); Lin, John K. H. (Inventor); Day, Jonathan Robert (Inventor); Kerslake, Thomas W. (Inventor)

    2010-01-01

    A flexible inflatable hinge includes curable resin for rigidly positioning panels of solar cells about the hinge in which wrap around contacts and flex circuits are disposed for routing power from the solar cells to the power bus further used for grounding the hinge. An indium tin oxide and magnesium fluoride coating is used to prevent static discharge while being transparent to ultraviolet light that cures the embedded resin after deployment for rigidizing the inflatable hinge.

  9. Silicon (BSFR) solar cell AC parameters at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, R Anil; Suresh, M.S. [ISRO Satellite Center, Bangalore- 560 017 (India); Nagaraju, J. [Solar Energy and Thermodynamic Laboratory, Department of Instrumentation, Indian Institute of Science, Bangalore- 560 012 (India)

    2005-01-31

    The AC parameters of back surface field reflected (BSFR) silicon solar cell are measured at different cell temperatures (198-348K) both in forward and reverse bias under dark condition using impedance spectroscopy technique. It is found that cell capacitance increases with temperature whereas cell resistance decreases, in forward bias voltage. Beyond maximum power point voltage, the cell inductance (0.28{mu}H) is measured, as the inductive reactance is comparable with cell series resistance. The measured cell parameters (cell capacitance, dynamic resistance, etc) are used to calculate the mean carrier lifetime and diode factor at different cell temperatures.

  10. Modeling the PbI2 formation in perovskite solar cells using XRD/XPS patterns

    Science.gov (United States)

    Sohrabpoor, Hamed; Elyasi, Majid; Aldosari, Marouf; Gorji, Nima E.

    2016-09-01

    The impact of prolonged irradiation and air humidity on the stability of perovskite solar cells is modeled using X-ray diffraction and X-ray photoelectron spectroscopy patterns reported in the literature. Light or air-moisture causes the formation of a thin PbI2 or oxide defective layers (in nanoscale) at the interface of perovskite/hole-transport-layer or at the junction with metallic back contact. This thin layer blocks the carrier transport/passivation at the interfaces and cause degradation of device parameters. Variation in thickness of defective layers, changes the XRD and XPS peaks. This allows detection and estimation of the type, crystallinity and thickness of the defective layer. A simple model is developed here to extract the thickness of such thin defective layers formed in nanometer scale at the back region of several perovskite devices. Based on this information, corrected energy band diagram of every device before and after degradation/aging is drawn and discussed in order to obtain insight into the carrier transport and charge collection at the barrier region. In addition, graphene contacted perovskite devices are investigated showing that honey-comb network of graphene contact reduces the effect of aging leading to formation of a thinner defective layer at the perovskite surface compared to perovskite devices with conventional inorganic contacts i.e. Au, Al.

  11. Solution processed organic bulk heterojunction tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Albrecht, Steve; Neher, Dieter [Soft Matter Physics, University of Potsdam, D-14476 Potsdam (Germany)

    2011-07-01

    One of the critical issues regarding the preparation of organic tandem solar cells from solution is the central recombination contact. This contact should be highly transparent and conductive to provide high recombination currents. Moreover it should protect the 1st subcell from the solution processing of the 2nd subcell. Here, we present a systematic study of various recombination contacts in organic bulk heterojunction tandem solar cells made from blends of different polymers with PCBM. We compare solution processed recombination contacts fabricated from metal-oxides (TiO{sub 2} and ZnO) and PEDOT:PSS with evaporated recombination contacts made from thin metal layers and molybdenum-oxide. The solar cell characteristics as well as the morphology of the contacts measured by AFM and SEM are illustrated. To compare the electrical properties of the varying contacts we show measurements on single carrier devices for different contact-structures. Alongside we present the results of optical modeling of the subcells and the complete tandem device and relate these results to experimental absorption and reflection spectra of the same structures. Based on these studies, layer thicknesses were adjusted for optimum current matching and device performance.

  12. ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

    Science.gov (United States)

    Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

    2007-02-20

    A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

  13. An analytical model for analyzing the current-voltage characteristics of bulk heterojunction organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Arnab, Salman M.; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, 1455 Blvd. de Maisonneuve West, Montreal, Quebec H3G 1M8 (Canada)

    2014-01-21

    An analytical model for analyzing the current-voltage (J-V) characteristics of bulk heterojunction (BHJ) organic solar cells is developed by incorporating exponential photon absorption, dissociation efficiency of bound electron-hole pairs (EHPs), carrier trapping, and carrier drift and diffusion in the photon absorption layer. Modified Braun's model is used to compute the electric field-dependent dissociation efficiency of the bound EHPs. The charge carrier concentrations and hence the photocurrent are calculated by solving the carrier continuity equation for both holes and electrons in the organic layer. The overall load current is calculated considering the actual solar spectrum and voltage dependent forward dark current. The model is verified by published experimental results. The efficiency of the P3HT:PCBM based solar cells critically depends on the dissociation of bound EHPs. On the other hand, cells made of a blend of the conjugated polymer (PCDTBT) with the soluble fullerene derivative (PCBM) show nearly unity dissociation efficiency, and their cell efficiency strongly depends on the charge collection efficiency. The effects of carrier lifetimes on the performance of PCDTBT solar cells have also been studied. The model is also used to investigate the effect of titanium oxide (TiO{sub x}) layer (at the back contact) on the J-V characteristics of PCDTBT solar cells. The results of this paper indicate that improvement of charge carrier transport in PCDTBT:PCBM blend and dissociation of bound EHPs in P3HT:PCBM blend are extremely important to increase the power conversion efficiency of the respective BHJ solar cells.

  14. Solar cell module. Taiyo denchi module

    Energy Technology Data Exchange (ETDEWEB)

    Nakano, Akihiko.

    1990-01-24

    This invention concerns a module frame of solar cell and a solar cell module using this frame. In particular, it concerns a frame and a module useful for the CdS/CdTe or CdS/CuInSe {sub 2} based cell. In the existing solar cell module, sealant is packed in between the edges of a glass substrate, a resin layer and a back protective thin film, etc. and a grooved frame of U-shaped section. For the sealant, silicon based resin and butyl rubber based resin are used many times, but either resin has defects such as their overflow from the module structure. In order to solve these defects, this invention proposes to provide stair-shaped protrusions along the four sides of the bottom of the box frame (herein after called the lower frame) of the module and at the same time, provide a groove for pooling the sealant at the portion where such protrusion meets the side wall, furthermore to provide depressions for pooling the sealant at the upper edge inside the side wall of the lower frame or to punch holes at the corners of the bottom of the lower frame. 9 figs.

  15. Comparison of manufactured and modeled solar cell

    OpenAIRE

    Strachala, D.; Hylský, J.

    2015-01-01

    The aim of the work is to compare the model of monocrystalline silicon solar cell in PC1D with the real solar cell structure in terms of using a model in manufacture process. Real solar cell was firstly measured and analyzed to determine input parameters for a simulation and then realized in free available PC1D software. Degree of conformity of modeled and real solar cell was in the end established for basic prediction of solar cell parameters before manufacturing process.

  16. Hydrogen passivation of multi-crystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    胡志华; 廖显伯; 刘祖明; 夏朝凤; 陈庭金

    2003-01-01

    The effects of hydrogen passivation on multi-crystalline silicon (mc-Si) solar cells are reported in this paper.Hydrogen plasma was generated by means of ac glow discharge in a hydrogen atmosphere. Hydrogen passivation was carried out with three different groups of mc-Si solar cells after finishing contacts. The experimental results demonstrated that the photovoltaic performances of the solar cell samples have been improved after hydrogen plasma treatment, with a relative increase in conversion efficiency up to 10.6%. A calculation modelling has been performed to interpret the experimental results using the model for analysis of microelectronic and photonic structures developed at Pennsylvania State University.

  17. Air stable organic-inorganic nanoparticles hybrid solar cells

    Science.gov (United States)

    Qian, Lei; Yang, Jihua; Xue, Jiangeng; Holloway, Paul H.

    2015-09-29

    A solar cell includes a low work function cathode, an active layer of an organic-inorganic nanoparticle composite, a ZnO nanoparticle layer situated between and physically contacting the cathode and active layers; and a transparent high work function anode that is a bilayer electrode. The inclusion of the ZnO nanoparticle layer results in a solar cell displaying a conversion efficiency increase and reduces the device degradation rate. Embodiments of the invention are directed to novel ZnO nanoparticles that are advantageous for use as the ZnO nanoparticle layers of the novel solar cells and a method to prepare the ZnO nanoparticles.

  18. Massive scale production and installation of flexible printed solar cells

    DEFF Research Database (Denmark)

    Hösel, Markus

    Printed solar cells can be prepared on a large scale (kilometers) on relatively small equipment using little material. The performance and lifetime are lower and shorter than many conventional PV technology but manufacturing speed, manufacturing cost, energy pay back time and installation speed c...... by far exceed known energy technologies with a significant potential for further improvement through architecture development and process intensification....

  19. Solar electron source and thermionic solar cell

    Directory of Open Access Journals (Sweden)

    Parham Yaghoobi

    2012-12-01

    Full Text Available Common solar technologies are either photovoltaic/thermophotovoltaic, or use indirect methods of electricity generation such as boiling water for a steam turbine. Thermionic energy conversion based on the emission of electrons from a hot cathode into vacuum and their collection by an anode is also a promising route. However, thermionic solar conversion is extremely challenging as the sunlight intensity is too low for heating a conventional cathode to thermionic emission temperatures in a practical manner. Therefore, compared to other technologies, little has been done in this area, and the devices have been mainly limited to large experimental apparatus investigated for space power applications. Based on a recently observed “Heat Trap” effect in carbon nanotube arrays, allowing their efficient heating with low-power light, we report the first compact thermionic solar cell. Even using a simple off-the-shelf focusing lens, the device delivered over 1 V across a load. The device also shows intrinsic storage capacity.

  20. Measurement of solar cell parameters using impedance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Suresh, M.S. [Battery Division, ISRO Satellite Centre, Bangalore (India)

    1996-08-15

    Measurement of solar cell parameters is important for the design of satellite power systems. These parameters can be measured using impedance spectroscopy and an equivalent circuit model developed. In this study parameters of a Back Surface Reflector Field solar cell (BSFR) have been measured using impedance spectroscopy. The results show high diffusion capacitance of BSFR cells and their exponential relation to the operating voltage. Cell dynamic resistance, diode factor, transition capacitance, and series resistance could also be measured. The minority carrier life time also has been calculated

  1. 3D photonic crystal intermediate reflector for micromorph thin-film tandem solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Uepping, Johannes; Miclea, Paul T.; Wehrspohn, Ralf B. [Institute of Physics, Martin-Luther-University of Halle-Wittenberg, Heinrich-Damerow-Str. 4, 06120 Halle (Germany); Rockstuhl, Carsten; Lederer, Falk [Institute of Condensed Matter Theory and Solid States Optics, Friedrich Schiller University Jena, 07743 Jena (Germany); Peters, Marius [Freiburg Centre for Material Research, University of Freiburg, 79104 Freiburg (Germany); Steidl, Lorenz; Zentel, Rudolf [Dept. of Chemistry, Pharmacy and Earth Science, Johannes Gutenberg University of Mainz, Duesbergweg 10-14 (Germany); Lee, Seung-Mo; Knez, Mato [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Lambertz, Andreas; Carius, Reinhard [Institute of Energy Research, IEF-5 Photovoltaics, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Bielawny, Andreas

    2008-12-15

    The concept of 3D photonic intermediate reflectors for micromorph silicon tandem solar cells has been investigated. In thin-film silicon tandem solar cells consisting of amorphous and microcrystalline silicon with two junctions of a-Si/{mu}c-Si, efficiency enhancements can be achieved by increasing the current density in the a-Si top cell. It is one goal to provide an optimized current matching at high current densities. For an ideal photon-management between top and bottom cell, a spectrally selective intermediate reflective layer (IRL) is necessary, which is less dependent of the angle of incidence than state-of-the-art thickness dependent massive interlayers. The design, preparation and characterization of a 3D photonic thin-film filter device for this purpose has been pursued straight forward in simulation and experimental realization. The inverted opal is capable of providing a suitable optical band stop with high reflectance and the necessary long wavelength transmittance as well and provides further options for improved light trapping. We have determined numerically the relative efficiency enhancement of an a-Si/{mu}c-Si tandem solar cell using a conductive 3D-photonic crystal. We have further fabricated such structures by ZnO-replication of polymeric opals using chemical vapour deposition and atomic layer deposition techniques and present the results of their characterization. Thin film photonic IRL have been prepared at the rear side of a-Si solar cells. Completed with a back contact, this is the first step to integrate this novel technology into an a-Si/{mu}c-Si tandem solar cell process. The spectral response of the cell is presented and compared with reference cells. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Design and Evaluation of Solar Grain Dryer with a Back-up Heater

    Directory of Open Access Journals (Sweden)

    K.S. Tonui

    2014-04-01

    Full Text Available The aim of the study was to design and construct a solar grain dryer integrated with a simple biomass burner using locally available materials. This was to address the limitations of the natural sun drying for example drying exposure, liability to pests and rodents, over-dependence on sun and escalated cost of mechanical dryers. This became beneficial especially in reducing post-harvest losses as well as helping in the preservation of agricultural product. The dryer is composed of solar collector, drying chamber, back-up heater and airflow system. The design was based on the study area of Mau summit located in Nakuru County, Kenya. The average ambient conditions were 26°C air temperature and 72% relative humidity with daily global solar radiation incident on horizontal surface of about 21.6 MJ/m2/day. A minimum of 3.77 m2 solar collector area was required to dry a batch of 100 kg maize grain in 6 h with natural convection from the initial moisture content of 21% to final moisture content of 13% wet basis. A prototype dryer designed was fabricated with minimum collector area of 0.6 m2 and used in the experiment. Forced convection was employed to reduce drying time. The thermal efficiencies of the solar and solar assisted dryer were 39.9 and 57.7%, respectively. The back-up heating system improved the efficiency of the dryer by 17.8% and reduced drying time substantially.

  3. Design considerations for the Tandem Junction Solar Cell

    Science.gov (United States)

    Matzen, W. T.; Carbajal, B. G.; Hardy, R. W.

    1979-01-01

    Structure and operation of the tandem junction cell (TJC) are described. The impact of using only back contacts is discussed. A model is presented which explains operation of the TJC in terms of transistor action. The model is applied to predict TJC performance as a function of physical parameters.

  4. 太阳能电池背板用胶黏剂黄变性能研究%The yellowing properties of the adhessive with solar cell back sheet

    Institute of Scientific and Technical Information of China (English)

    田丛; 李永杰; 姜伟; 刘瀛

    2016-01-01

    In order to improve the UV and oxidation resistanceof the adhesive with the solae battery ,which prolonged exposure in the ultraviolet light without causing the color change,and it had sufficient durability with the high temperature, high humidity and sunlight .The material was added the antioxidants and light stabilizers ,which could make the oxidation and photo-oxidation reaction rate of the macromolecule material Inhibit or reduce,besides it could increase the heat and light properties of materials and defer the degradable aging of the materials. In this paper,based on the study of the structure and properties with the different stabilizers ,furthermore they were be used in the formulation,By testing and research,we choosed the appropriate stabilizers to improve the performance of the adhesives with the solar battery back-yellowing.%为了改善太阳能背板用胶黏剂的耐紫外与抗氧化性,使之长时间暴露于紫外线而不引起黄变,并对高温、高湿度和太阳光具有足够的耐久性,将抗氧剂和光稳定剂添加于材料中,抑制或降低材料的热氧化和光氧化反应速度,提高材料的耐热、耐光性能,延缓材料的降解和老化。本文在研究不同的稳定剂结构与性能基础上将各种类型的稳定剂应用于配方中,通过测试与研究,得出合适的稳定剂来改善太阳能电池背板用胶黏剂耐黄变性能。

  5. Realization of 13.6% Efficiency on 20 μm Thick Si/Organic Hybrid Heterojunction Solar Cells via Advanced Nanotexturing and Surface Recombination Suppression.

    Science.gov (United States)

    He, Jian; Gao, Pingqi; Liao, Mingdun; Yang, Xi; Ying, Zhiqin; Zhou, Suqiong; Ye, Jichun; Cui, Yi

    2015-06-23

    Hybrid silicon/polymer solar cells promise to be an economically feasible alternative energy solution for various applications if ultrathin flexible crystalline silicon (c-Si) substrates are used. However, utilization of ultrathin c-Si encounters problems in light harvesting and electronic losses at surfaces, which severely degrade the performance of solar cells. Here, we developed a metal-assisted chemical etching method to deliver front-side surface texturing of hierarchically bowl-like nanopores on 20 μm c-Si, enabling an omnidirectional light harvesting over the entire solar spectrum as well as an enlarged contact area with the polymer. In addition, a back surface field was introduced on the back side of the thin c-Si to minimize the series resistance losses as well as to suppress the surface recombination by the built high-low junction. Through these improvements, a power conversion efficiency (PCE) up to 13.6% was achieved under an air mass 1.5 G irradiation for silicon/organic hybrid solar cells with the c-Si thickness of only about 20 μm. This PCE is as high as the record currently reported in hybrid solar cells constructed from bulk c-Si, suggesting a design rule for efficient silicon/organic solar cells with thinner absorbers.

  6. Collective motion of cells crawling on a substrate: roles of cell shape and contact inhibition

    CERN Document Server

    Schnyder, Simon Kaspar; Molina, John Jairo; Yamamoto, Ryoichi

    2016-01-01

    Contact inhibition plays a crucial role in the motility of cells, the process of wound healing, and the formation of tumors. By mimicking the mechanical motion of calls crawling on a substrate using a pseudopod, we constructed a minimal model for migrating cells which gives rise to contact inhibition of locomotion (CIL) naturally. The model cell consists of two disks, one in the front (a pseudopod) and the other one in the back (cell body), connected by a finitely extensible spring. Despite the simplicity of the model, the cells' collective behavior is highly nontrivial, depending on the shape of cells and whether CIL is enabled or not. Cells with a small front circle (i.e. a narrow pseudopod) form immobile colonies. In contrast, cells with a large front circle (i.e. such as a lamellipodium) exhibit coherent migration without any explicit alignment mechanism being present in the model. This suggests that crawling cells often exhibit broad fronts because it helps them avoid clustering. Upon increasing the dens...

  7. Advances in Perovskite Solar Cells

    Science.gov (United States)

    Zuo, Chuantian; Bolink, Henk J.; Han, Hongwei; Huang, Jinsong

    2016-01-01

    Organolead halide perovskite materials possess a combination of remarkable optoelectronic properties, such as steep optical absorption edge and high absorption coefficients, long charge carrier diffusion lengths and lifetimes. Taken together with the ability for low temperature preparation, also from solution, perovskite‐based devices, especially photovoltaic (PV) cells have been studied intensively, with remarkable progress in performance, over the past few years. The combination of high efficiency, low cost and additional (non‐PV) applications provides great potential for commercialization. Performance and applications of perovskite solar cells often correlate with their device structures. Many innovative device structures were developed, aiming at large‐scale fabrication, reducing fabrication cost, enhancing the power conversion efficiency and thus broadening potential future applications. This review summarizes typical structures of perovskite solar cells and comments on novel device structures. The applications of perovskite solar cells are discussed.

  8. Probing the energy levels of perovskite solar cells via Kelvin probe and UV ambient pressure photoemission spectroscopy.

    Science.gov (United States)

    Harwell, J R; Baikie, T K; Baikie, I D; Payne, J L; Ni, C; Irvine, J T S; Turnbull, G A; Samuel, I D W

    2016-07-20

    The field of organo-lead halide perovskite solar cells has been rapidly growing since their discovery in 2009. State of the art devices are now achieving efficiencies comparable to much older technologies like silicon, while utilising simple manufacturing processes and starting materials. A key parameter to consider when optimising solar cell devices or when designing new materials is the position and effects of the energy levels in the materials. We present here a comprehensive study of the energy levels present in a common structure of perovskite solar cell using an advanced macroscopic Kelvin probe and UV air photoemission setup. By constructing a detailed map of the energy levels in the system we are able to predict the importance of each layer to the open circuit voltage of the solar cell, which we then back up through measurements of the surface photovoltage of the cell under white illumination. Our results demonstrate the effectiveness of air photoemission and Kelvin probe contact potential difference measurements as a method of identifying the factors contributing to the open circuit voltage in a solar cell, as well as being an excellent way of probing the physics of new materials.

  9. Probing the energy levels of perovskite solar cells via Kelvin probe and UV ambient pressure photoemission spectroscopy.

    Science.gov (United States)

    Harwell, J R; Baikie, T K; Baikie, I D; Payne, J L; Ni, C; Irvine, J T S; Turnbull, G A; Samuel, I D W

    2016-07-20

    The field of organo-lead halide perovskite solar cells has been rapidly growing since their discovery in 2009. State of the art devices are now achieving efficiencies comparable to much older technologies like silicon, while utilising simple manufacturing processes and starting materials. A key parameter to consider when optimising solar cell devices or when designing new materials is the position and effects of the energy levels in the materials. We present here a comprehensive study of the energy levels present in a common structure of perovskite solar cell using an advanced macroscopic Kelvin probe and UV air photoemission setup. By constructing a detailed map of the energy levels in the system we are able to predict the importance of each layer to the open circuit voltage of the solar cell, which we then back up through measurements of the surface photovoltage of the cell under white illumination. Our results demonstrate the effectiveness of air photoemission and Kelvin probe contact potential difference measurements as a method of identifying the factors contributing to the open circuit voltage in a solar cell, as well as being an excellent way of probing the physics of new materials. PMID:27384817

  10. Efficient nanorod-based amorphous silicon solar cells with advanced light trapping

    Energy Technology Data Exchange (ETDEWEB)

    Kuang, Y. [Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, High Tech Campus, Building 21, 5656 AE Eindhoven (Netherlands); Department of Applied Physics, Plasma & Materials Processing, Eindhoven University of Technology (TUE), P.O. Box 513, 5600 MB Eindhoven (Netherlands); Lare, M. C. van; Polman, A. [Center for Nanophotonics, FOM Institute AMOLF, Science Park 104, 1098 XG Amsterdam (Netherlands); Veldhuizen, L. W.; Schropp, R. E. I., E-mail: r.e.i.schropp@tue.nl [Department of Applied Physics, Plasma & Materials Processing, Eindhoven University of Technology (TUE), P.O. Box 513, 5600 MB Eindhoven (Netherlands); Rath, J. K. [Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, High Tech Campus, Building 21, 5656 AE Eindhoven (Netherlands)

    2015-11-14

    We present a simple, low-cost, and scalable approach for the fabrication of efficient nanorod-based solar cells. Templates with arrays of self-assembled ZnO nanorods with tunable morphology are synthesized by chemical bath deposition using a low process temperature at 80 °C. The nanorod templates are conformally coated with hydrogenated amorphous silicon light absorber layers of 100 nm and 200 nm thickness. An initial efficiency of up to 9.0% is achieved for the optimized design. External quantum efficiency measurements on the nanorod cells show a substantial photocurrent enhancement both in the red and the blue parts of the solar spectrum. Key insights in the light trapping mechanisms in these arrays are obtained via a combination of three-dimensional finite-difference time-domain simulations, optical absorption, and external quantum efficiency measurements. Front surface patterns enhance the light incoupling in the blue, while rear side patterns lead to enhanced light trapping in the red. The red response in the nanorod cells is limited by absorption in the patterned Ag back contact. With these findings, we develop and experimentally realize a further advanced design with patterned front and back sides while keeping the Ag reflector flat, showing significantly enhanced scattering from the back reflector with reduced parasitic absorption in the Ag and thus higher photocurrent generation. Many of the findings in this work can serve to provide insights for further optimization of nanostructures for thin-film solar cells in a broad range of materials.

  11. Efficient nanorod-based amorphous silicon solar cells with advanced light trapping

    International Nuclear Information System (INIS)

    We present a simple, low-cost, and scalable approach for the fabrication of efficient nanorod-based solar cells. Templates with arrays of self-assembled ZnO nanorods with tunable morphology are synthesized by chemical bath deposition using a low process temperature at 80 °C. The nanorod templates are conformally coated with hydrogenated amorphous silicon light absorber layers of 100 nm and 200 nm thickness. An initial efficiency of up to 9.0% is achieved for the optimized design. External quantum efficiency measurements on the nanorod cells show a substantial photocurrent enhancement both in the red and the blue parts of the solar spectrum. Key insights in the light trapping mechanisms in these arrays are obtained via a combination of three-dimensional finite-difference time-domain simulations, optical absorption, and external quantum efficiency measurements. Front surface patterns enhance the light incoupling in the blue, while rear side patterns lead to enhanced light trapping in the red. The red response in the nanorod cells is limited by absorption in the patterned Ag back contact. With these findings, we develop and experimentally realize a further advanced design with patterned front and back sides while keeping the Ag reflector flat, showing significantly enhanced scattering from the back reflector with reduced parasitic absorption in the Ag and thus higher photocurrent generation. Many of the findings in this work can serve to provide insights for further optimization of nanostructures for thin-film solar cells in a broad range of materials

  12. Optimized conditions for the improvement of thin film CdS/CdTe solar cells

    International Nuclear Information System (INIS)

    Efficient thin film CdS/CdTe solar cell performance requires optimum parameters of each layer of this cell and of the barrier structure. Moreover, the effect of optical losses, recombination losses at front and back surface of CdTe and recombination losses in the space-charge region (SCR) must be considered in order to really analyze the role of these parameters on the performance of these cells. This work is focused on studying theoretically the effect of the thickness of the front contact (ITO), thickness of the window layer (CdS), thickness of the absorber layer (CdTe), width of the space-charge region and electron lifetime on the efficiency of CdS/CdTe solar cells. The reflection losses from interfaces and absorption losses in ITO and CdS, front and rear surface recombination losses of CdTe as well as recombination losses in SCR have been studied. It has been observed that the short-circuit current strongly depends on the thickness of ITO, thickness of CdS, thickness CdTe and electron lifetime. The concentration of uncompensated impurities (Na − Nd) in CdTe, which determines the width of SCR, plays a key role in the generation of photocurrent. The recombination losses in the SCR decrease rapidly with increasing the carrier lifetime in this region and can be ignored at lifetime of 10−7 s. The reflectivity from the back contact introduces a small influence in increasing the short-current density particularly at thick absorber layer (5–8 μm). Under the conditions of Na − Nd ~ 1016 cm−3, τn = 10−6 s, dCdTe = 8 μm, dITO = 100 nm, and dCdS = 100 nm, the recombination and optical losses record their minimum ratio of 27%. Most of these losses (24%) are due to the optical losses. The efficiency of CdS/CdTe under these parameters is about 18.2% which is exactly matching with the recent experimental studies. Moreover, an ultrathin CdTe (= 1 μm) is sufficient to introduce high efficiency of 16.4%. - Highlights: • This work represents a theoretical study

  13. Progress towards high efficiency thin film CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, K.W.; Eberspacher, C.; Cohen, F.; Avery, J.; Duran, G.; Bottenberg, W.

    1988-01-15

    This paper describes work investigating high rate cadmium telluride (CdTe) film deposition by close-space vapor transport, leading to 4 cm/sup 2/ tin oxide/CdTe solar cells of efficiency greater than 10%. Under a 100 mW cm/sup -2/ air mass 1.5 global spectrum, a cell of efficiency 10.5% had a short-circuit current of 28.1 mA cm/sup -2/, an open circuit voltage of 0.663 V and a fill factor of 0.563. Our major achievements include (1) the use of completely nonvacuum processing, (2) the fabrication of simple transparent conductive oxide/CdTe cells without need of a CdS window layer, and (3) screenprinted back contacts.

  14. Influence of atomic layer deposition Al2O3 nano-layer on the surface passivation of silicon solar cells

    International Nuclear Information System (INIS)

    A stack of Al2O3/SiNx dual layer was applied for the back side surface passivation of p-type multi-crystalline silicon solar cells, with laser-opened line metal contacts, forming a local aluminum back surface field (local Al-BSF) structure. A slight amount of Al2O3, wrapping around to the front side of the wafer during the thermal atomic layer deposition process, was found to have a negative influence on cell performance. The different process flow was found to lead to a different cell performance, because of the Al2O3 wrapping around the front surface. The best cell performance, with an absolute efficiency gain of about 0.6% compared with the normal full Al-BSF structure solar cell, was achieved when the Al2O3 layer was deposited after the front surface of the wafer had been covered by a SiNx layer. We discuss the possible reasons for this phenomenon, and propose three explanations as the Ag paste, being hindered from firing through the front passivation layer, degraded the SiNx passivation effect and the Al2O3 induced an inversion effect on the front surface. Characterization methods like internal quantum efficiency and contact resistance scanning were used to assist our understanding of the underlying mechanisms. (semiconductor physics)

  15. Space satellite power system. [conversion of solar energy by photovoltaic solar cell arrays

    Science.gov (United States)

    Glaser, P. E.

    1974-01-01

    The concept of a satellite solar power station was studied. It is shown that it offers the potential to meet a significant portion of future energy needs, is pollution free, and is sparing of irreplaceable earth resources. Solar energy is converted by photovoltaic solar cell arrays to dc energy which in turn is converted into microwave energy in a large active phased array. The microwave energy is beamed to earth with little attenuation and is converted back to dc energy on the earth. Economic factors are considered.

  16. Stability and Degradation of Organic and Polymer Solar Cells

    DEFF Research Database (Denmark)

    Organic photovoltaics (OPV) are a new generation of solar cells with the potential to offer very short energy pay back times, mechanical flexibility and significantly lower production costs compared to traditional crystalline photovoltaic systems. A weakness of OPV is their comparative instability...... during operation and this is a critical area of research towards the successful development and commercialization of these 3rd generation solar cells. Covering both small molecule and polymer solar cells, Stability and Degradation of Organic and Polymer Solar Cells summarizes the state of the art...... understanding of stability and provides a detailed analysis of the mechanisms by which degradation occurs. Following an introductory chapter which compares different photovoltaic technologies, the book focuses on OPV degradation, discussing the origin and characterization of the instability and describing...

  17. IBIC analysis of CdTe/CdS solar cells

    CERN Document Server

    Colombo, E; Calusi, S; Giuntini, L; Giudice, A Lo; Manfredotti, C; Massi, M; Olivero, P; Romeo, A; Romeo, N; Vittone, E

    2016-01-01

    This paper reports on the investigation of the electronic properties of a thin film CdS/CdTe solar cell with the Ion Beam Induced Charge (IBIC) technique. The device under test is a thin film (total thickness around 10 um) multilayer heterojunction solar cell, displaying an efficiency of 14% under AM1.5 illumination conditions. The IBIC measurements were carried out using focused 3.150 MeV He ions raster scanned onto the surface of the back electrode. The charge collection efficiency (CCE) maps show inhomogeneous response of the cell to be attributed to the polycrystalline nature of the CdTe bulk material. Finally, the evolution of the IBIC signal vs. the ion fluence was studied in order to evaluate the radiation hardness of the CdS/CdTe solar cells in view of their use in solar modules for space applications.

  18. Synaptic Contacts Enhance Cell-to-Cell Tau Pathology Propagation

    Directory of Open Access Journals (Sweden)

    Sara Calafate

    2015-05-01

    Full Text Available Accumulation of insoluble Tau protein aggregates and stereotypical propagation of Tau pathology through the brain are common hallmarks of tauopathies, including Alzheimer’s disease (AD. Propagation of Tau pathology appears to occur along connected neurons, but whether synaptic contacts between neurons are facilitating propagation has not been demonstrated. Using quantitative in vitro models, we demonstrate that, in parallel to non-synaptic mechanisms, synapses, but not merely the close distance between the cells, enhance the propagation of Tau pathology between acceptor hippocampal neurons and Tau donor cells. Similarly, in an artificial neuronal network using microfluidic devices, synapses and synaptic activity are promoting neuronal Tau pathology propagation in parallel to the non-synaptic mechanisms. Our work indicates that the physical presence of synaptic contacts between neurons facilitate Tau pathology propagation. These findings can have implications for synaptic repair therapies, which may turn out to have adverse effects by promoting propagation of Tau pathology.

  19. Synaptic Contacts Enhance Cell-to-Cell Tau Pathology Propagation.

    Science.gov (United States)

    Calafate, Sara; Buist, Arjan; Miskiewicz, Katarzyna; Vijayan, Vinoy; Daneels, Guy; de Strooper, Bart; de Wit, Joris; Verstreken, Patrik; Moechars, Diederik

    2015-05-26

    Accumulation of insoluble Tau protein aggregates and stereotypical propagation of Tau pathology through the brain are common hallmarks of tauopathies, including Alzheimer's disease (AD). Propagation of Tau pathology appears to occur along connected neurons, but whether synaptic contacts between neurons are facilitating propagation has not been demonstrated. Using quantitative in vitro models, we demonstrate that, in parallel to non-synaptic mechanisms, synapses, but not merely the close distance between the cells, enhance the propagation of Tau pathology between acceptor hippocampal neurons and Tau donor cells. Similarly, in an artificial neuronal network using microfluidic devices, synapses and synaptic activity are promoting neuronal Tau pathology propagation in parallel to the non-synaptic mechanisms. Our work indicates that the physical presence of synaptic contacts between neurons facilitate Tau pathology propagation. These findings can have implications for synaptic repair therapies, which may turn out to have adverse effects by promoting propagation of Tau pathology.

  20. Polymer tandem solar cells

    NARCIS (Netherlands)

    Hadipour, Afshin

    2007-01-01

    The global demand for energy is expanding continually. Therefore, realization of green power sources are needed since combustion of fossil fuels will have serious consequences for the climate on the Earth. With a photovoltaic device, the solar light can be converted into electricity which is the mos

  1. 19.4%-efficient large-area fully screen-printed silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gatz, Sebastian; Hannebauer, Helge; Hesse, Rene; Werner, Florian; Schmidt, Arne; Dullweber, Thorsten; Bothe, Karsten [Institute for Solar Energy Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Schmidt, Jan; Brendel, Rolf [Institute for Solar Energy Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Institute of Solid-State Physics, University of Hannover, Appelstrasse 2, 30167 Hannover (Germany)

    2011-04-15

    We demonstrate industrially feasible large-area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 x 125 mm{sup 2} p-type 2-3 {omega} cm boron-doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen-printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic-layer-deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of S{sub rear} = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved J{sub sc} of up to 38.9 mA/cm{sup 2} and V{sub oc} of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full-area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen-printed solar cells. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Analysis of CdTe solar cells in relation to materials issues

    International Nuclear Information System (INIS)

    By now, extensive experimental research is available on thin film solar cells based on CdTe and on CIGS, and their electrical and optical behaviour is characterised by a multitude of diverse characterisation techniques. At the same time, numerical simulation programmes have matured and are available to the research community to assist in interpreting these measurements consistently. Once multiple measurements are (more or less) quantitatively described, the numerical simulation can be used to explore the effect of a variation of materials parameter (e.g. the presence or absence of a property, or variation in a range of values) to the final solar cell characteristics. Examples of such analysis for CdTe solar cells are shown. In CdTe cells, much research has been devoted to the activation treatment of the absorber, and to the technology of the back contact. Analysis of ample measurements has evidenced the crucial role of the profile of the (effective) doping density through the device. It will be illustrated how this relative simple (but hardly mastered) materials property has a far reaching influence to the cell characteristics such as roll-over and cross-over of I-V curves, also in dependence on illumination and voltage, conventional and apparent quantum efficiency, and finally fill factor and efficiency

  3. Co-electroplated Kesterite Bifacial Thin-Film Solar Cells: A Study of Sulfurization Temperature.

    Science.gov (United States)

    Ge, Jie; Chu, Junhao; Yan, Yanfa; Jiang, Jinchun; Yang, Pingxiong

    2015-05-20

    Earth-abundant material, kesterite Cu2ZnSnS4 (CZTS), demonstrates the tremendous potential to serve as the absorber layer for the bifacial thin-film solar cell. The exploration of appropriate sulfurization conditions including annealing temperature is significant to gain insight into the growth mechanism based on the substrates using transparent conductive oxides (TCO) and improve device performance. The kesterite solar absorbers were fabricated on ITO substrates by sulfurizing co-electroplated Cu-Zn-Sn-S precursors in argon diluted H2S atmosphere at different temperatures (475-550 °C) for 30 min. Experimental proof, including cross-section scanning electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, UV-vis-NIR transmission spectrum, and Raman and far-infrared spectroscopy, is presented for the crystallization of CZTS on an ITO substrate and the interfacial reaction between the ITO back contact and CZTS absorber. The complete conversion of precursor into CZTS requires at least 500 °C sulfurization temperature. The aggressive interfacial reaction leading to the out-diffusion of In into CZTS to a considerable extent, formation of tin sulfides, and electrically conductive degradation of ITO back contact occurs at the sulfurization temperatures higher than 500 °C. The bifacial devices obtained by 520 °C sulfurization exhibit the best conversion efficiencies and open circuit voltages. However, the presence of non-ohmic back contact (secondary diode), the short minority lifetime, and the high interfacial recombination rates negatively limit the open circuit voltage, fill factor, and efficiency, evidenced by illumination/temperature-dependent J-V, frequency-dependent capacitance-voltage (C-V-f), time-resolved PL (TRPL), and bias-dependent external quantum efficiency (EQE) measurements. PMID:25871647

  4. Co-electroplated Kesterite Bifacial Thin-Film Solar Cells: A Study of Sulfurization Temperature.

    Science.gov (United States)

    Ge, Jie; Chu, Junhao; Yan, Yanfa; Jiang, Jinchun; Yang, Pingxiong

    2015-05-20

    Earth-abundant material, kesterite Cu2ZnSnS4 (CZTS), demonstrates the tremendous potential to serve as the absorber layer for the bifacial thin-film solar cell. The exploration of appropriate sulfurization conditions including annealing temperature is significant to gain insight into the growth mechanism based on the substrates using transparent conductive oxides (TCO) and improve device performance. The kesterite solar absorbers were fabricated on ITO substrates by sulfurizing co-electroplated Cu-Zn-Sn-S precursors in argon diluted H2S atmosphere at different temperatures (475-550 °C) for 30 min. Experimental proof, including cross-section scanning electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, UV-vis-NIR transmission spectrum, and Raman and far-infrared spectroscopy, is presented for the crystallization of CZTS on an ITO substrate and the interfacial reaction between the ITO back contact and CZTS absorber. The complete conversion of precursor into CZTS requires at least 500 °C sulfurization temperature. The aggressive interfacial reaction leading to the out-diffusion of In into CZTS to a considerable extent, formation of tin sulfides, and electrically conductive degradation of ITO back contact occurs at the sulfurization temperatures higher than 500 °C. The bifacial devices obtained by 520 °C sulfurization exhibit the best conversion efficiencies and open circuit voltages. However, the presence of non-ohmic back contact (secondary diode), the short minority lifetime, and the high interfacial recombination rates negatively limit the open circuit voltage, fill factor, and efficiency, evidenced by illumination/temperature-dependent J-V, frequency-dependent capacitance-voltage (C-V-f), time-resolved PL (TRPL), and bias-dependent external quantum efficiency (EQE) measurements.

  5. Solar cell is not absolutely ecologically sound

    Energy Technology Data Exchange (ETDEWEB)

    Van Calmthout, M.

    1988-11-01

    The University of Utrecht, Netherlands, inventorized the social costs of a large-scale solar cell industry in particular with regard to the environmental impacts. During production and dismantlement of photovoltaic systems hazardous wastes and dangerous situations can be released respectively can occur. The most important results are discussed. Four solar cell technologies are highlighted: the crystalline silicon solar cell, the amorphous silicon solar cell, the CdS/CuInSe/sub 2/ solar cell, and the GaAs solar cell. 1 fig., 1 tab.

  6. Bi facial silicon solar cell study in modelling in frequency dynamic regime under multispectral illumination: Recombination parameters determination methods

    International Nuclear Information System (INIS)

    A bibliographic study on the techniques of characterization of silicon solar cell, diodes, massifs and silicon wafer are presented. The influence of the modulation frequency and recombination in volume and in surface phenomena of on the profiles of carriers' densities, photocurrent and photovoltage has been put in evidence. The study of surface recombination velocities permitted to show that the bi facial silicon solar cell of Back Surface Field type behaves like an ohmic contacts solar cell for modulation frequencies above 40 khz. pplicability in frequency dynamic regime in the frequency range [0 - 40 khz] of three techniques of steady state recombination parameters determination is shown. A technique of diffusion length determination, in the range of (200 Hz - 40 khz] is proposed. It rests on the measurement of the short circuit current phase that is compared with the theoretical curve of short circuit current phase. The intersection of the experimental short circuit current phase and the theoretical curve of short circuit current phase permits to get the minority carriers effective diffusion length. An equivalent electric model of a solar cell in frequency dynamic regime is proposed. A study in modelling of the bi facial solar cell shunt resistance and space charge zone capacity is led from a determination method of these parameters proposed in steady state. (Author

  7. Cu{sub 2}ZnSn(S,Se){sub 4} solar cells based on chemical bath deposited precursors

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao, E-mail: chao.gao@kit.edu [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany); Schnabel, Thomas; Abzieher, Tobias [Zentrum für Sonnenenergie-und Wasserstoff-Forschung Baden-Württemberg (ZSW), 70565 Stuttgart (Germany); Krämmer, Christoph [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany); Powalla, Michael [Zentrum für Sonnenenergie-und Wasserstoff-Forschung Baden-Württemberg (ZSW), 70565 Stuttgart (Germany); Light Technology Institute (LTI), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany); Kalt, Heinz; Hetterich, Michael [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany)

    2014-07-01

    A low-cost method has been developed to fabricate Cu{sub 2}ZnSn(S,Se){sub 4} solar cells. By this method, firstly SnS, CuS, and ZnS layers are successively deposited on a molybdenum/soda lime glass (Mo/SLG) substrate by chemical bath deposition. The Cu{sub 2}ZnSn(S,Se){sub 4} thin films are obtained by annealing the precursor in a selenium atmosphere utilizing a graphite box in the furnace. The obtained Cu{sub 2}ZnSn(S,Se){sub 4} thin films show large crystalline grains. By optimizing the preparation process, Cu{sub 2}ZnSn(S,Se){sub 4} solar cells with efficiencies up to 4.5% are obtained. The results imply that the Cu{sub 2}ZnSn(S,Se){sub 4}/CdS interface and the back contact may be limiting factors for solar cell efficiency. - Highlights: • A chemical bath deposition method is developed to prepare Cu{sub 2}ZnSn(S,Se){sub 4} thin films. • The Cu{sub 2}ZnSn(S,Se){sub 4} thin films show good crystallization. • Solar cells with efficiencies up to 4.5% can be prepared based on the Cu{sub 2}ZnSn(S,Se){sub 4} layer. • The limiting factors for the solar cell efficiency are analyzed.

  8. Solar cell circuit and method for manufacturing solar cells

    Science.gov (United States)

    Mardesich, Nick (Inventor)

    2010-01-01

    The invention is a novel manufacturing method for making multi-junction solar cell circuits that addresses current problems associated with such circuits by allowing the formation of integral diodes in the cells and allows for a large number of circuits to readily be placed on a single silicon wafer substrate. The standard Ge wafer used as the base for multi-junction solar cells is replaced with a thinner layer of Ge or a II-V semiconductor material on a silicon/silicon dioxide substrate. This allows high-voltage cells with multiple multi-junction circuits to be manufactured on a single wafer, resulting in less array assembly mass and simplified power management.

  9. Current-Enhanced Quantum Well Solar Cells

    Institute of Scientific and Technical Information of China (English)

    LOU Chao-Gang; SUN Qiang; XU Jun; ZHANG Xiao-Bing; LEI Wei; WANG Bao-Ping; CHEN Wen-Jun; QIAO Zai-Xiang

    2006-01-01

    We present the experimental results that demonstrate the enhancement of the short-circuit current of quantum well solar cells. The spectral response shows that the introduction of quantum wells extends the absorption spectrum of solar cells. The current densities under different truncated spectrums significantly increase, showing that quantum well solar cells are suitable to be the middle cells of GaInP/GaAs/Ge triple-junction solar cells to increase their overall conversion efficiency.

  10. Variable Temperature Current-Voltage Measurements of CdTe Solar Cells

    Science.gov (United States)

    Smith, A. D.

    2000-03-01

    We have used a 2" x 2" Peltier heat pump chip powered with 24 V from a computer power supply to build a variable temperature stage for current voltage measurements of solar cells. A voltage divider was used to achieve several different set point temperatures from 25 oC to -24 oC. This system was used with a halogen lamp to study the electrical performance of polycrystalline thin-film solar cells fabricated in our group. These cells have the superstrate structure glass/SnO2:F/CdS/CdTe/metal.(1) The I-V characteristic shows evidence of a blocking back-diode which sets in below room temperature. This behavior will be related to the diffusion into the CdTe of the metals used for our back contact.(2) 1. M. Shao, A. Fischer, D. Grecu, U. Jayamaha, E. Bykov, G. Contreras-Puente, R.G. Bohn, and A.D. Compaan, Appl. Phys. Lett. 69, 3045-3047 (1996). 2. D. Grecu and A.D. Compaan, Appl. Phys. Lett. 75, 361-363 (1999).

  11. Photon upconversion for thin film solar cells

    NARCIS (Netherlands)

    de Wild, J.

    2012-01-01

    In this research one of the many possible methods to increase the efficiency of solar cells is described. The method investigated is based on adapting the solar light in such a way that the solar cell can convert more light into electricity. The part of the solar spectrum that is adapted is the part

  12. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1987-10-01

    Cadmium telluride, with a room-temperature band-gap energy of 1.5 eV, is a promising thin-film photovoltaic material. The major objective of this research has been to demonstrate thin-film CdTe heterojunction solar cells with a total area greater than 1 sq cm and photovoltaic efficiencies of 13 percent or more. Thin-film p-CdTe/CdS/SnO2:F/glass solar cells with an AM1.5 efficiency of 10.5 percent have been reported previously. This report contains results of work done on: (1) the deposition, resistivity control, and characterization of p-CdTe films by the close-spaced sublimation process; (2) the deposition of large-band-gap window materials; (3) the electrical properties of CdS/CdTe heterojunctions; (4) the formation of stable, reproducible, ohmic contacts (such as p-HgTe) to p-CdTe; and (5) the preparation and evaluation of heterojunction solar cells.

  13. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

  14. Schottky Quantum Dot Solar Cells Stable in Air under Solar Illumination

    KAUST Repository

    Tang, Jiang

    2010-01-07

    (Figure Presented) The air stability and power conversion efficiency of solution-processed PbS quantum dot solar cells is dramatically improved by the insertion of 0.8 nm LiF between the PbS nanoparticle film and the Al contact. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA.

  15. A device model for the tandem junction solar cell

    Science.gov (United States)

    Matzen, W. T.; Chiang, S. Y.; Carbajal, B. G.

    1979-01-01

    A conceptual device model has been developed to explain operation of the tandem junction cell (TJC) when back contacts only are used. Operation and parameters of the cell are explained by transistor action. Experimental observations are presented which confirm that current is collected for carrier generation in the front uncontacted n(plus) region. The model should be useful as a guideline to optimize the TJC by application of transistor design principles.

  16. STEM CELLS: Differentiated cells in a back-up role

    OpenAIRE

    Desai, Tushar J.; Krasnow, Mark A.

    2013-01-01

    Two independent studies show that, if push comes to shove, differentiated cells of the stomach and lung can act as adult stem cells generating various cell types of the tissue, including a pool of stem cells.

  17. 晶体硅太阳电池金属电极光学损失的理论分析与实验研究%Theoretical analysis and experimental study of optical loss of metal contacts of crystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    李涛; 周春兰; 宋洋; 杨海峰; 郜志华; 段野; 李友忠; 刘振刚; 王文静

    2011-01-01

    本文基于丝网印刷和丝网印刷后光诱导电镀太阳电池,分析了太阳电池前表面金属电极引起的光学损失的各种情况.考虑到空气-玻璃界面和金属电极两侧边缘区域的反射,通过将金属电极截面近似为半椭圆形模拟了电极的光学损失,计算得到的有效宽度比约为金属电极几何宽度的40%.通过对不同类型样品反射谱的测量计算,同时在理论模拟和实验测量上得到了太阳电池前表面金属电极的光学损失,相应的理论与实验结果相符合.%One main factor of restricting industrial crystalline solar cell efficiency is the optical losses caused by the metal front side contacts, including the absorption loss and reflection loss. Based on screen-printed and screen-printed seed layers thickened by light-induced electroplating solar cells, in this paper various cases of optical losses due to the metal contacts are analyzed. Taking into account the reflections in the air-glass interface and the edge regions of metal contacts, the optical losses are simulated by assuming approximately half-oval cross-section of metal contacts. The results show that the effective width ratio is about 40% of the metal contact geometry width. By measuring and calculating the reflection spectra of different types of samples, the optical losses of the metal front side contacts of solar cells are obtained in theoretical simulation and experimental measurement. The corresponding theory and the experimental results are in good agreement with each other.

  18. Molybdenum-tin as a solar cell metallization system

    Science.gov (United States)

    Boyd, D. W.; Radics, C.

    The operations of solar cell manufacture are briefly examined. The formation of reliable, ohmic, low-loss, and low-cost metal contacts on solar cells is a critical process step in cell manufacturing. In a commonly used process, low-cost metallization is achieved by screen printing a metal powder-glass frit ink on the surface of the Si surface and the conductive metal powder. A technique utilizing a molybdenum-tin alloy for the metal contacts appears to lower the cost of materials and to reduce process complexity. The ink used in this system is formulated from MoO3 with Sn powder and a trace amount of titanium resonate. Resistive losses of the resulting contacts are low because the ink contains no frit. The MoO3 is finally melted and reduced in forming gas (N2+H2) to Mo metal. The resulting Mo is highly reactive which facilitates the Mo-Si bonding.

  19. Organic and hybrid solar cells

    CERN Document Server

    Huang, Hui

    2014-01-01

    This book delivers a comprehensive evaluation of organic and hybrid solar cells and identifies their fundamental principles and numerous applications. Great attention is given to the charge transport mechanism, donor and acceptor materials, interfacial materials, alternative electrodes, device engineering and physics, and device stability. The authors provide an industrial perspective on the future of photovoltaic technologies.

  20. Fullerene based organic solar cells

    NARCIS (Netherlands)

    Popescu, Lacramioara Mihaela

    2008-01-01

    The direct conversion of the sunlight into electricity is the most elegant process to generate environmentally-friendly renewable energy. Plastic solar cells offer the prospect of flexible, lightweight, lower cost of manufacturing, and hopefully an efficient way to produce electricity from sunlight.

  1. Solar-Cell Slide Rule

    Science.gov (United States)

    Yamakawa, K. A.

    1983-01-01

    Slide rule relates efficiency, impurity types, impurity concentrations, and process types. Solar cell slide rule calculations are determination of allowable impurity concentration for nonredistributive process, determination of impurity buildup factor for redistributive process and determination of allowable impurity concentration for redistributive process.

  2. Repair of defects in photoactive layer of organic solar cells

    NARCIS (Netherlands)

    Oostra, A.J.; Blom, P.W.M.; Michels, J.J.

    2015-01-01

    Defects occurring during printing of the photoactive layer in organic solar cells lead to short-circuits due to direct contact between the PEDOT:PSS anode and metallic cathode. We provide a highly effective repair method where the defected zone with bare PEDOT:PSS is treated with aqueous sodium hypo

  3. Monocrystalline solar cells are gaining ground; Monokristallin im Aufwind

    Energy Technology Data Exchange (ETDEWEB)

    Bernreuter, Johannes

    2011-10-31

    Increasingly, manufacturers use selective emitters for serial production of solar cells of monocrystalline silicon with an efficiency of 19 percent. Strong competition will soon have them reach 20 percent. For the same reason, copper will become a substitute for expensive silver front contacts.

  4. Process development for automated solar cell and module production. Task 4: automated array assembly

    Energy Technology Data Exchange (ETDEWEB)

    Hagerty, J.J.

    1980-06-30

    The scope of work under this contract involves specifying a process sequence which can be used in conjunction with automated equipment for the mass production of solar cell modules for terrestrial use. This process sequence is then critically analyzed from a technical and economic standpoint to determine the technological readiness of each process step for implementation. The process steps are ranked according to the degree of development effort required and according to their significance to the overall process. Under this contract the steps receiving analysis were: back contact metallization, automated cell array layup/interconnect, and module edge sealing. For automated layup/interconnect both hard automation and programmable automation (using an industrial robot) were studied. The programmable automation system was then selected for actual hardware development. Economic analysis using the SAMICS system has been performed during these studies to assure that development efforts have been directed towards the ultimate goal of price reduction. Details are given. (WHK)

  5. Silver nanoparticles-coated glass frits for silicon solar cells

    Science.gov (United States)

    Li, Yingfen; Gan, Weiping; Li, Biyuan

    2016-04-01

    Silver nanoparticles-coated glass frit composite powders for silicon solar cells were prepared by electroless plating. Silver colloids were used as the activating agent of glass frits. The products were characterized by X-ray diffraction, scanning electron microscopy, and differential scanning calorimetry. The characterization results indicated that silver nanoparticles with the melting temperature of 838 °C were uniformly deposited on glass frit surface. The particle size of silver nanoparticles could be controlled by adjusting the [Ag(NH3)2]NO3 concentration. The as-prepared composite powders were applied in the front side metallization of silicon solar cells. Compared with those based on pure glass frits, the solar cells containing the composite powders had the denser silver electrodes and the better silver-silicon ohmic contacts. Furthermore, the photovoltaic performances of solar cells were improved after the electroless plating.

  6. The effect of radiation intensity on diode characteristics of silicon solar cells

    International Nuclear Information System (INIS)

    In order to explore electro-physical properties of silicon solar cells, diode characteristics and ohmic properties of Al - Ni / (n+) - Si contact has been studied. Diode characteristics have been studied on a wide temperature range and on various radiation intensity, so this gives us the ability to observe the effect of the radiation and the temperature on electro-physical properties of under study solar cells. Volt-Ampere characteristics of the ohmic contacts of the silicon solar cells have been presented. As well as contact resistance and mechanism of current transmission has been identified.

  7. Nanowire-based All Oxide Solar Cells

    OpenAIRE

    Yang, Peidong

    2009-01-01

    We present an all-oxide solar cell fabricated from vertically oriented zinc oxide nanowires and cuprous oxide nanoparticles. Our solar cell consists of vertically oriented n-type zinc oxide nanowires, surrounded by a film constructed from p-type cuprous oxide nanoparticles. Our solution-based synthesis of inexpensive and environmentally benign oxide materials in a solar cell would allow for the facile production of large-scale photovoltaic devices. We found that the solar cell performance is ...

  8. Perovskite solar cells: an emerging photovoltaic technology

    OpenAIRE

    Nam-Gyu Park

    2015-01-01

    Perovskite solar cells based on organometal halides represent an emerging photovoltaic technology. Perovskite solar cells stem from dye-sensitized solar cells. In a liquid-based dye-sensitized solar cell structure, the adsorption of methylammonium lead halide perovskite on a nanocrystalline TiO2 surface produces a photocurrent with a power conversion efficiency (PCE) of around 3–4%, as first discovered in 2009. The PCE was doubled after 2 years by optimizing the perovskite coating conditions....

  9. Key Physical Mechanisms in Nanostructured Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Dr Stephan Bremner

    2010-07-21

    The objective of the project was to study both theoretically and experimentally the excitation, recombination and transport properties required for nanostructured solar cells to deliver energy conversion efficiencies well in excess of conventional limits. These objectives were met by concentrating on three key areas, namely, investigation of physical mechanisms present in nanostructured solar cells, characterization of loss mechanisms in nanostructured solar cells and determining the properties required of nanostructured solar cells in order to achieve high efficiency and the design implications.

  10. Historic Developments, Current Technologies and Potential of Nanotechnology to Develop Next Generation Solar Cells with Improved Efficiency

    OpenAIRE

    Nisith Raval; Ajay Kumar Gupta

    2015-01-01

    Sun is the continuous source of renewable energy, from where we can get abundant of solar energy. Concept of conversionof solar energy into heat was used back in 200 B.C. since then, the solar cells have been developed which can convert solar energy into theelectrical energy and these systems have been produced commercially. The technologies to enhance the power conversion efficiency (PCE)have been continuously improved. Different technologies used for developing solar cells can be categorize...

  11. Effect of in situ UHV CdCl2-activation on the electronic properties of CdTe thin film solar cells

    International Nuclear Information System (INIS)

    To reach reasonable conversion efficiencies of approximately 10% and above with CdTe thin film solar cells an activation step involving chlorine at elevated temperatures seems to be necessary before back contact formation. This activation process has been simulated in an ultrahigh-vacuum (UHV) system. Solar cells with a maximum efficiency of 9.1% have been prepared using this process. In addition the effect of the CdCl2 activation process on the electronic properties of each solar cell layer, SnO2, CdS and CdTe has been investigated in situ using photoelectron spectroscopy. The effects of the activation on the Fermi level position of all investigated layers is presented and discussed

  12. Response of Cds/CdTe Devices to Te Exposure of Back Contact: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, T. A.; Burst, J. M.; Ma, J.; Wei, S. H.; Kuciauskas, D.; Barnes, T. M.; Duenow, J. N.; Young, M. R.; Rance, W. L.; Li, J. V.; Dippo, P.

    2012-06-01

    Theoretical predictions of thin-film CdS/CdTe photovoltaic (PV) devices have suggested performance may be improved by reducing recombination due to Te-vacancy (VTe) or Te-interstitial (Tei) defects. Although formation of these intrinsic defects is likely influenced by CdTe deposition parameters, it also may be coupled to formation of beneficial cadmium vacancy (VCd) defects. If this is true, reducing potential effects of VTe or Tei may be difficult without also reducing the density of VCd. In contrast, post-deposition processes can sometimes afford a greater degree of defect control. Here we explore a post-deposition process that appears to influence the Te-related defects in polycrystalline CdTe. Specifically, we have exposed the CdTe surface to Te prior to ZnTe:Cu/Ti contact-interface formation with the goal of reducing VTe but without significantly reducing VCd. Initial results show that when this modified contact is used on a CdCl2-treated CdS/CdTe device, significantly poorer device performance results. This suggests two things: First, the amount of free-Te available during contact formation (either from chemical etching or CuTe or ZnTe deposition) may be a more important parameter to device performance than previously appreciated. Second, if processes have been used to reduce the effect of VTe (e.g., oxygen and chlorine additions to the CdTe), adding even a small amount of Te may produce detrimental defects.

  13. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  14. Sheet plastic filters for solar cells

    Science.gov (United States)

    Wizenick, R. J.

    1972-01-01

    Poly(vinylidene fluoride) (PVF) film protects solar cells on Mars surface from radiation and prevents degradation of solar cell surfaces by Martian dust storms. PVF films may replace glass or quartz windows on solar cell arrays used to generate power on earth.

  15. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    A R M Yusoff; M N Syahrul; K Henkel

    2007-08-01

    A major issue encountered during fabrication of triple junction -Si solar cells on polyimide substrates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and Gouldflex), and the effect of tie coats on film adhesion.

  16. Polymer-based solar cells

    Directory of Open Access Journals (Sweden)

    Alex C. Mayer

    2007-11-01

    Full Text Available A significant fraction of the cost of solar panels comes from the photoactive materials and sophisticated, energy-intensive processing technologies. Recently, it has been shown that the inorganic components can be replaced by semiconducting polymers capable of achieving reasonably high power conversion efficiencies. These polymers are inexpensive to synthesize and can be solution-processed in a roll-to-roll fashion with high throughput. Inherently poor polymer properties, such as low exciton diffusion lengths and low mobilities, can be overcome by nanoscale morphology. We discuss polymer-based solar cells, paying particular attention to device design and potential improvements.

  17. Concentrated sunlight for organic solar cells

    DEFF Research Database (Denmark)

    Tromholt, Thomas

    2010-01-01

    Concentrated sunlight provides a novel approach to the study of the physical and electrical parameters of organic solar cells. The study of performance of organic solar cells at high solar concentrations provides insight into the physics, which cannot be studied with conventional solar simulators...... studies of polymers for organic solar cells. Degradation was monitored by the evolution of the UV-vis absorption over time. Varying the solar intensity from 1 to 200 suns, the degradation rates were increased by more than a factor of 100 relative to degradation at 1 simulated sun. 5 different polymers....... A high solar intensity study of inverted P3HT:PCBM solar cells is presented. Performance peak positions were found to be in the range of 1-5 suns, with smaller cells peaking at higher solar concentrations. Additionally, concentrated sunlight is demonstrated as a practical tool for accelerated stability...

  18. New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency

    Directory of Open Access Journals (Sweden)

    A. Teyou Ngoupo

    2015-01-01

    Full Text Available Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D is used to investigate the possibility of realizing ultrathin CdTe based solar cells with high and stable conversion efficiency. In the first step, we modified the conventional cell structure by substituting the CdS window layer with a CdS:O film having a wide band gap ranging from 2.42 to 3.17 eV. Thereafter, we simulated the quantum efficiency, as well as the parameters of J-V characteristics, and showed how the thickness of CdS:O layer influences output parameters of Glass/SnO2/ZTO/CdS:O/CdTe1-xSx/CdTe/Ni reference cell. High conversion efficiency of 17.30% has been found using CdTe1-xSx (x=0.12 and CdTe layers of thickness 15 nm and 4 μm, respectively. Secondly, we introduced a BSR layer between the absorber layer and back metal contact, which led to Glass/SnO2/ZTO/CdS:O/CdTe1-xSx/CdTe/BSR/Ni configuration. We found that a few nanometers (about 5 nm of CdTe1-xSx layer is sufficient to obtain high conversion efficiency. For BSR layer, different materials with large band gap, such as ZnTe, Cu2Te, and p+-CdTe, have been used in order to reduce minority carrier recombination at the back contact. When ZnTe is used, high conversion efficiency of 21.65% and better stability are obtained, compared to other BSR.

  19. Morphological types of epithelial-mesenchymal cell contacts in odontogenesis.

    OpenAIRE

    Burgess, A M; Katchburian, E

    1982-01-01

    During early stages of odontogenesis, differentiating ameloblasts form cytoplasmic processes which penetrate deeply into developing uncalcified dentine. Some of these cytoplasmic protrusions form close approximations or contacts with odontoblast processes. The contacts are of a variety of morphological types, but their membranes never fuse or form any known type of cell junction. The present results, together with those derived from other studies, suggest that the approximations or contacts m...

  20. Light trapping and optical losses in microcrystalline silicon pin solar cells deposited on surface-textured glass/ZnO substrates

    Energy Technology Data Exchange (ETDEWEB)

    Springer, J. [Forschungszentrum Julich GmbH, Julich (Germany). Institute of Photovoltaics; Academy of Sciences of the Czech Republic, Prague (Czech Republic). Institute of Physics; Rech, B.; Reetz, W.; Muller, J. [Forschungszentrum Julich GmbH, Julich (Germany). Institute of Photovoltaics; Vanecek, M. [Academy of Sciences of the Czech Republic, Prague (Czech Republic). Institute of Physics

    2005-01-01

    Influence of front TCO thickness, surface texture and different back reflectors on short-circuit current density and fill factor of thin film silicon solar cells were investigated. For the front TCO studies, we used ZnO layers of different thickness and applied wet chemical etching in diluted HCl. This approach allowed us to adjust ZnO texture and thickness almost independently. Additionally, we used optical modeling to calculate optical absorption losses in every layer. Results show that texture and thickness reduction of front ZnO increase quantum efficiency over the whole spectral range. The major gain is in the red/IR region. However, the higher sheet resistance of the thin ZnO causes a reduction in fill factor. In the back reflector studies, we compared four different back reflectors: ZnO/Ag, Ag, ZnO/Al and Al. ZnO/Ag yielded the best, Al the worst light trapping properties. Furthermore, the Ag back contact turned out to be superior to ZnO/Al for microcrystalline cells. Finally, the smooth ZnO/Ag back contact showed a higher reflectivity than the rough one. We prepared pin cells with rough and smooth ZnO/Ag interface, leaving the roughness of all other interfaces unchanged. (author)