WorldWideScience

Sample records for ba srtio3 thin

  1. Fractal formation of a Y-Ba-Cu-O thin film on SrTiO3

    International Nuclear Information System (INIS)

    Chow, L.; Chen, J.; Desai, V.; Sundaram, K.; Arora, S.

    1989-01-01

    Fractal formation has been observed after thermal annealing of the rf-sputtered Y-Ba-Cu-O thin film on SrTiO 3 substrate. Through energy-dispersive x-ray analysis, it was found that the composition of the fractal was YBa 2 Cu 3 O x and the surrounding film composition wasY 2 Ba 2 Cu 3 O x . The fractal dimensions D ranging from 1.26 to 1.65 were obtained using the standard sandbox method with different thresholds

  2. Photoconductivity of transparent perovskite semiconductor BaSnO3 and SrTiO3 epitaxial thin films

    Science.gov (United States)

    Park, Jisung; Kim, Useong; Char, Kookrin

    2016-02-01

    We measured the photoconductivity of transparent semiconductor BaSnO3 and compared it with that of SrTiO3. Epitaxial BaSnO3 and SrTiO3 films were grown on MgO substrates to exclude any contribution to photoconductivity from the substrate due to its large bandgap. In spite of the same perovskite structure and similar bandgap sizes (3.1-3.2 eV), the photoconductive behaviors of the two materials are quite different in terms of their magnitude and time dependence. The photoconductivity of BaSnO3 persists for many hours after removal from light exposure, whereas the photoconductivity of SrTiO3 shows little persistent conductivity. In addition, the photoconductivity of BaSnO3 increases to a value over 25 times higher than that of SrTiO3, after 3 h of illuminations. The spectral photoconductive responses of both BaSnO3 and SrTiO3 show their highest peaks below 400 nm, suggesting that the electron-hole pair generation is the main mechanism of the photoconductivity for the both materials. The large persistent photoconductivity of BaSnO3 seems related with deep level defects with relatively large barriers for charge trapping and detrapping.

  3. Photoconductivity of transparent perovskite oxide semiconductors BaSnO3 and SrTiO3 epitaxial thin films

    Science.gov (United States)

    Park, Jisung; Kim, Useong; Char, Kookrin; Institute of Applied Physics, Department of Physics; Astronomy, Seoul National University, Seoul Team

    We have measured the photoconductivity (PC) of epitaxial thin films of transparent semiconductor BaSnO3 (BSO) and SrTiO3 (STO) at room temperature. The epitaxial thin films of BSO and STO were grown by pulsed laser ablation technique on the MgO substrates to exclude any conductance from the substrate owing to its large bandgap (~7.8 eV). Despite the same crystalline structure and similar band gap sizes (~3.2 eV), the PC of BSO behaved very differently. The slowly varying component in the PC of BSO is much larger than that of STO; the PC of BSO increased slowly, reached higher magnitude after the same duration of illumination, and persisted longer than many hours after the light was turned off, whereas the PC of STO showed little persistent conductivity. The spectral responses of the PC of BSO and STO showed their highest peaks below 400 nm when measured by a UV monochromator system, suggesting that the electron-hole pair generation is the main mechanism of the PC for both materials. The higher mobility of BSO should be partially responsible for the higher PC. The large persistent PC of BSO seems related to the dislocations that trap electrons easily.

  4. Epitaxial Ba2IrO4 thin-films grown on SrTiO3 substrates by pulsed laser deposition

    OpenAIRE

    Nichols, J.; Korneta, O. B.; Terzic, J.; Cao, G.; Brill, J. W.; Seo, S. S. A.

    2014-01-01

    We have synthesized epitaxial Ba2IrO4 (BIO) thin-films on SrTiO3 (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metalinsulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr2IrO4. Moreover, BIO thin-films have both an enhanced electronic bandwidth and electronic-correlatio...

  5. Magnetic and electrical transport properties of LaBaCo2O(5.5+δ) thin films on vicinal (001) SrTiO3 surfaces.

    Science.gov (United States)

    Ma, Chunrui; Liu, Ming; Collins, Gregory; Wang, Haibin; Bao, Shanyong; Xu, Xing; Enriquez, Erik; Chen, Chonglin; Lin, Yuan; Whangbo, Myung-Hwan

    2013-01-23

    Highly epitaxial LaBaCo(2)O(5.5+δ) thin films were grown on the vicinal (001) SrTiO(3) substrates with miscut angles of 0.5°, 3.0°, and 5.0° to systemically study strain effect on its physical properties. The electronic transport properties and magnetic behaviors of these films are strongly dependent on the miscut angles. With increasing the miscut angle, the transport property of the film changes from semiconducting to semimetallic, which results most probably from the locally strained domains induced by the surface step terraces. In addition, a very large magnetoresistance (34% at 60 K) was achieved for the 0.5°-miscut film, which is ~30% larger than that for the film grown on the regular (001) SrTiO(3) substrates.

  6. Stability of the oxygen vacancy induced conductivity in BaSnO3 thin films on SrTiO3

    Science.gov (United States)

    Jaim, H. M. Iftekhar; Lee, Seunghun; Zhang, Xiaohang; Takeuchi, Ichiro

    2017-10-01

    BaSnO3 (BSO) has emerged as a major candidate for exploration of a variety of functional device applications. In this letter, we report on the role of the oxygen vacancy concentration in the electronic states, the crystal structure, and the transport properties of BSO thin films grown on SrTiO3 substrates by pulsed laser deposition. We fabricated five BSO films systematically reducing the deposition oxygen pressure from 1 × 10-1 Torr to 5 × 10-3 Torr. The BSO films show gradual transition from an insulating one fabricated at 1 × 10-1 Torr to highly conducting ones with decreasing deposition oxygen pressure. X-ray photoelectron spectroscopy measurements show the increasing oxygen vacancy concentration as a function of the decreased deposition oxygen pressure. Films deposited at 5 × 10-3 Torr displayed the lowest room temperature resistivity (1.73 mΩ cm) and the highest concentration of oxygen vacancies. Temperature-dependent resistivity of the samples deposited at low oxygen pressures suggests the presence of shallow states near the conduction band. With decreasing oxygen pressure, the out-of-plane lattice parameter of BSO increases while the in-plane lattice parameter remains nearly the same. Oxygen deficient conducting BSO films with high oxygen vacancies exhibited excellent structural, electronic, and valence state stabilities when they were post-annealed at temperatures up to 760 °C.

  7. The direct growth of SrTiO3 (100) layers on silicon (100) substrates; application as a buffer layer for the growth of DyBa2Cu3O7-delta thin films

    NARCIS (Netherlands)

    Mechin, L.L.; Gerritsma, G.J.; Garcia lopez, J.J.

    1999-01-01

    Highly (100)-oriented SrTiO3 thin films were sputtered on Si (100) substrates. After the optimization of the deposition conditions, the fraction of (110)-oriented material in the SrTiO3 films was about 3%, but the rocking curve of the SrTiO3 (200) peak was quite large (full width at half maximum

  8. Highly oriented as-deposited superconducting laser ablated thin films of Y1Ba2Cu3O/sub 7-//sub δ/ on SrTiO3, zirconia, and Si substrates

    International Nuclear Information System (INIS)

    Koren, G.; Polturak, E.; Fisher, B.; Cohen, D.; Kimel, G.

    1988-01-01

    KrF excimer laser ablation of an Y 1 Ba 2 Cu 3 O/sub 7-//sub δ/ pellet in 0.1--0.2 Torr of O 2 ambient was used to deposit thin superconducting films onto SrTiO 3 , yttria-stabilized zirconia (YSZ), and silicon substrates at 600--700 0 C. The as-deposited 1-μm-thick films at 650--700 0 C substrate temperature were superconducting, without further high-temperature annealing. All films had a similar T/sub c/ onset of ∼92 K but different zero-resistance T/sub c/ of 90, 85, and 70 K for the films on SrTiO 3 , YSZ, and Si substrates, respectively. Angular x-ray diffraction analysis showed that all the films were highly oriented with the c axis perpendicular to their surface. Critical current densities at 77 K were about 40 000 and 10 000 A/cm 2 for the films on SrTiO 3 and YSZ, respectively. Smooth surface morphology was observed in all films, with occasional defects and cracks in the films on YSZ, which seems to explain the lower critical current in these films

  9. Ferroelectric properties of NaNbO3-BaTiO3 thin films deposited on SrRuO3/(001)SrTiO3 substrate by pulsed laser deposition

    International Nuclear Information System (INIS)

    Yamazoe, Seiji; Oda, Shinya; Sakurai, Hiroyuki; Wada, Takahiro; Adachi, Hideaki

    2009-01-01

    (NaNbO 3 ) 1-x (BaTiO 3 ) x (NN-xBT) thin films with low BaTiO 3 (BT) concentrations x (x=0.05 and 0.10) were fabricated on SrRuO 3 /(001)SrTiO 3 (SRO)/(001)STO) substrate by pulsed laser deposition (PLD). X-ray diffraction pattern (XRD) and transmission electron diffraction pattern (TED) showed that NN-0.10BT thin film was epitaxially grown on SRO/(001)STO substrate with a crystallographic relationship of [001] NN-xBT parallel [001] STO . From reciprocal space maps, the lattice parameters of the out-of-plane direction of NN-xBT thin films became larger with an increase in BT concentration, although the lattice parameter of the in-plane was hardly changed by the BT concentration. The value of relative dielectric constant ε r of the NN-xBT thin films were increased with BT concentration. The ε r and the dielectric loss tanδ of NN-0.10BT were 1220 and 0.02 at 1 kHz, respectively. The P-E hysteresis loops of the NN-xBT thin films showed clear ferroelectricity. Although the value of remanent polarization P r decreased with the BT concentration, the behaviors of ε r , P r , and coercive electric field E c of the NN-xBT thin films against the BT concentration accorded with those of NN-xBT ceramics, in which NN-0.10BT ceramics exhibited the largest piezoelectric property. Therefore, the NN-0.10BT thin film is expected to show high piezoelectricity. (author)

  10. Dielectric enhancement of BaTiO3/SrTiO3 superlattices with embedded Ni nanocrystals

    International Nuclear Information System (INIS)

    Xiong Zhengwei; Sun Weiguo; Wang Xuemin; Jiang Fan; Wu Weidong

    2012-01-01

    Highlights: ► The BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs were successfully fabricated by L-MBE. ► The influence with the various concentrations of Ni nanocrystals embedded in BaTiO 3 /SrTiO 3 superlattices was also discussed. ► The BaTiO 3 /SrTiO 3 superlattices with lower concentration of embedded Ni NCs had higher permittivity and dielectric loss compared with the pure BaTiO 3 /SrTiO 3 superlattices. ► The dielectric enhancement of BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs was proposed to explained by Drude quasi-free-electron theory. - Abstract: The self-organized Ni nanocrystals (NCs) were embedded in BaTiO 3 /SrTiO 3 superlattices using laser molecular beam epitaxy (L-MBE). The stress of the composite films was increased with the increasing concentration of embedded Ni NCs, as investigation in stress calculation. The influence with the various concentrations of Ni NCs embedded in BaTiO 3 /SrTiO 3 superlattices was also discussed. The internal stress of the films was too strong to epitaxial growth of BaTiO 3 /SrTiO 3 superlattices. Compared with the pure BaTiO 3 /SrTiO 3 superlattices, the BaTiO 3 /SrTiO 3 superlattices with lower concentration of embedded Ni NCs had higher permittivity and dielectric loss. Furthermore, the dielectric enhancement of BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs was proposed to explained by Drude quasi-free-electron theory.

  11. Defect engineering of SrTiO3 thin films for resistive switching applications

    International Nuclear Information System (INIS)

    Wicklein, Sebastian

    2013-01-01

    As a matter of fact, the importance of (transition) metal oxides for modern applications in the field of energy and information technology (IT) for e.g. novel energy storage systems and solid state electronic devices is increasing. Previous studies discovered the importance of defects in an oxide for their functionality and emphasized the impact of stoichiometry on the oxide performance. A new field of interest of the memory technology sector is the so-called resistive switching phenomena where a voltage stimulus causes a thin oxide (≤10 nm) to change its resistance state from a high resistance state to a low resistance state and back. So called resistive RAM (ReRAM or RRAM) are deemed to be the future replacement (2015) for contemporary FLASH memory technology due to its extremely low energy consumption, its very fast read/write time (ns) and its possible node size 3 was used as an oxide model material and was deposited by pulsed laser deposition (PLD) onto doped and undoped SrTiO 3 single crystals to investigate the formation of defects as a function of the process parameters. By combining structural and chemical thin film analysis with detailed PLD plume diagnostics and modeling of the laser plume dynamics, it was possible to elucidate the different physical mechanisms determining the stoichiometry of SrTiO 3 during PLD. Deviations between thin film and target stoichiometry are basically a result of two effects, namely, incongruent ablation and preferential scattering of lighter ablated species during their motion towards the substrate in the O 2 background gas. It is shown that the SrTiO 3 system reacts to a non-stoichiometry with the systematic incorporation of titanium and strontium vacancies which could be detected by positron annihilation lifetime spectroscopy. The role of extrinsic dopands such as Fe is shown to have more complicated effects on the SrTiO 3 system than portrayed by theoretical considerations. The effect of defects on the resistive

  12. Structure and magnetic properties of spinel-perovskite nanocomposite thin films on SrTiO3 (111) substrates

    Science.gov (United States)

    Kim, Dong Hun; Yang, Junho; Kim, Min Seok; Kim, Tae Cheol

    2016-09-01

    Epitaxial CoFe2O4-BiFeO3 nanocomposite thin films were synthesized on perovskite structured SrTiO3 (001) and (111) substrates by combinatorial pulsed laser deposition and characterized using scanning electron microscopy, x-ray diffraction, and vibrating sample magnetometer. Triangular BiFeO3 nanopillars were formed in a CoFe2O4 matrix on (111) oriented SrTiO3 substrates, while CoFe2O4 nanopillars with rectangular or square top surfaces grew in a BiFeO3 matrix on (001) substrates. The magnetic hysteresis loops of nanocomposites on (111) oriented SrTiO3 substrates showed isotropic properties due to the strain relaxation while those of films on SrTiO3 (001) substrates exhibited a strong out-of-plane anisotropy originated from shape and strain effects.

  13. On the nature of change in Ni oxidation state in BaTiO3-SrTiO3 system

    OpenAIRE

    Lebedev, A. I.; Sluchinskaya, I. A.

    2016-01-01

    XAFS studies of Ni-doped Ba$_{1-x}$Sr$_x$TiO$_3$ solid solution reveal that the Ni oxidation state changes from 4 in SrTiO$_3$ to 2.5 in BaTiO$_3$ when varying $x$. This change is accompanied by a noticeable change in the interatomic Ni-O distances in the first shell. The first-principles calculations show that nickel creates an impurity band in the forbidden band gap of BaTiO$_3$ and SrTiO$_3$, which explains the appearance of intense absorption of Ni-doped samples in the visible region. The...

  14. ARPES study of cesium-coated FeSe thin films on SrTiO3

    Science.gov (United States)

    Phan, G. N.; Nakayama, K.; Kanayama, S.; Kuno, M.; Sugawara, K.; Sato, T.; Takahashi, T.

    2017-07-01

    We have performed in-situ angle-resolved photoemission spectroscopy measurements of cesium(Cs)-deposited FeSe thin films on SrTiO3. We found that Cs deposition enables heavily electron doping into the FeSe layer. In properly doped films, we also revealed the occurrence of superconductivity accompanied by the suppression of electronic nematicity. The present result demonstrates that Cs deposition is an effective way to realize and enhance superconductivity in FeSe.

  15. Electrical transport across nanometric SrTiO3 and BaTiO3 barriers in conducting/insulator/conducting junctions

    Science.gov (United States)

    Navarro, H.; Sirena, M.; González Sutter, J.; Troiani, H. E.; del Corro, P. G.; Granell, P.; Golmar, F.; Haberkorn, N.

    2018-01-01

    We report the electrical transport properties of conducting/insulator/conducting heterostructures by studying current-voltage IV curves at room temperature. The measurements were obtained on tunnel junctions with different areas (900, 400 and 100 μm2) using a conducting atomic force microscope. Trilayers with GdBa2Cu3O7 (GBCO) as the bottom electrode, SrTiO3 or BaTiO3 (thicknesses between 1.6 and 4 nm) as the insulator barrier, and GBCO or Nb as the top electrode were grown by DC sputtering on (100) SrTiO3 substrates For SrTiO3 and BaTiO3 barriers, asymmetric IV curves at positive and negative polarization can be obtained using electrodes with different work function. In addition, hysteretic IV curves are obtained for BaTiO3 barriers, which can be ascribed to a combined effect of the FE reversal switching polarization and an oxygen vacancy migration. For GBCO/BaTiO3/GBCO heterostructures, the IV curves correspond to that expected for asymmetric interfaces, which indicates that the disorder affects differently the properties at the bottom and top interfaces. Our results show the role of the interface disorder on the electrical transport of conducting/insulator/conduction heterostructures, which is relevant for different applications, going from resistive switching memories (at room temperature) to Josephson junctions (at low temperatures).

  16. Direct approach for flexoelectricity from first-principles calculations: cases for SrTiO3 and BaTiO3

    International Nuclear Information System (INIS)

    Xu, Tao; Wang, Jie; Shimada, Takahiro; Kitamura, Takayuki

    2013-01-01

    Understanding the nature of flexoelectricity, which is the linear response of electric polarization to a strain gradient, has recently become crucial for nanostructured dielectrics and ferroelectrics because of their complicated strain distribution. This paper presents a direct and full approach at the atomic level to predict flexoelectricity for dielectrics based on first-principles calculations. The flexoelectric coefficients of BaTiO 3 and SrTiO 3 are directly calculated as the representatives of ferroelectric and paraelectric materials, respectively. For SrTiO 3 , the flexoelectric coefficients predicted from our approach are in good agreement with the experimental measurements. For BaTiO 3 , our predictions have a large discrepancy from the experimental measurements. In a practical situation, defect and surface effects are inevitable, and have a significant influence on the flexoelectricity. Direct methods have the advantage of including the extrinsic contributions from surface and defect effects. (paper)

  17. Direct approach for flexoelectricity from first-principles calculations: cases for SrTiO3 and BaTiO3.

    Science.gov (United States)

    Xu, Tao; Wang, Jie; Shimada, Takahiro; Kitamura, Takayuki

    2013-10-16

    Understanding the nature of flexoelectricity, which is the linear response of electric polarization to a strain gradient, has recently become crucial for nanostructured dielectrics and ferroelectrics because of their complicated strain distribution. This paper presents a direct and full approach at the atomic level to predict flexoelectricity for dielectrics based on first-principles calculations. The flexoelectric coefficients of BaTiO3 and SrTiO3 are directly calculated as the representatives of ferroelectric and paraelectric materials, respectively. For SrTiO3, the flexoelectric coefficients predicted from our approach are in good agreement with the experimental measurements. For BaTiO3, our predictions have a large discrepancy from the experimental measurements. In a practical situation, defect and surface effects are inevitable, and have a significant influence on the flexoelectricity. Direct methods have the advantage of including the extrinsic contributions from surface and defect effects.

  18. Direct approach for flexoelectricity from first-principles calculations: cases for SrTiO3 and BaTiO3

    Science.gov (United States)

    Xu, Tao; Wang, Jie; Shimada, Takahiro; Kitamura, Takayuki

    2013-10-01

    Understanding the nature of flexoelectricity, which is the linear response of electric polarization to a strain gradient, has recently become crucial for nanostructured dielectrics and ferroelectrics because of their complicated strain distribution. This paper presents a direct and full approach at the atomic level to predict flexoelectricity for dielectrics based on first-principles calculations. The flexoelectric coefficients of BaTiO3 and SrTiO3 are directly calculated as the representatives of ferroelectric and paraelectric materials, respectively. For SrTiO3, the flexoelectric coefficients predicted from our approach are in good agreement with the experimental measurements. For BaTiO3, our predictions have a large discrepancy from the experimental measurements. In a practical situation, defect and surface effects are inevitable, and have a significant influence on the flexoelectricity. Direct methods have the advantage of including the extrinsic contributions from surface and defect effects.

  19. Preparation and dielectric properties of BaCu(B2O5)-doped SrTiO3-based ceramics for energy storage

    International Nuclear Information System (INIS)

    Li, Lingxia; Yu, Xiaoxu; Cai, Haocheng; Liao, Qingwei; Han, Yemei; Gao, Zhengdong

    2013-01-01

    Highlights: • BaCu(B 2 O 5 ) is added to the multi-ions doped SrTiO 3 ceramics as sintering aid. • The sintering temperature is decreased from 1300 °C to 1075 °C. • The incorporation of Ba 2+ into the matrix increases the dielectric constant. • The breakdown strength increases due to the decrease of grain size and porosity. • The dissolution of BCB contributes to the improvement of dielectric properties. -- Abstract: BaCu(B 2 O 5 ) (BCB) was used as sintering aids to lower the sintering temperature of multi-ions doped SrTiO 3 ceramics effectively from 1300 °C to 1075 °C by conventional solid state method. The effect of BCB content on crystalline structures, microstructures and properties of the ceramics was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and dielectric measurements, respectively. The addition of BCB enhanced the breakdown strength (BDS) while did not sacrifice the dielectric constant. The enhancement of BDS should be due to the modification of microstructures, i.e., smaller and more homogeneous grain sizes after BCB addition. The dielectric constant of BCB-doped ceramics maintained a stable value with 1.0 mol% BCB, which was dominated by the combination of two opposite effects caused by the presence of second phases and the incorporation of Cu 2+ and Ba 2+ , while further increase was owing to the increase of dissolved Ba 2+ ions when the content of BCB is more than 2.0 mol%. The multi-ions doped SrTiO 3 ceramics with 1.0 mol% BCB addition showed optimal dielectric properties as follows: dielectric constant of 311.37, average breakdown strength of 28.78 kV/mm, discharged energy density of 1.05 J/cm 3 and energy efficiency of 98.83%

  20. Investigation of the electroforming and resistive switching mechanisms in Fe-doped SrTiO3 thin films

    International Nuclear Information System (INIS)

    Menke, Tobias

    2009-01-01

    To overcome the physical limits of todays memory technologies new concepts are needed. The resistive random access memory (RRAM), which bases on a nonvolatile and repeatable change of the resistance by external electrical stimuli, seems to be one promising candidate. Within the scope of this work, the model system Strontium titanate (SrTiO 3 ) has been investigated to get a deeper understanding of the underlying physical mechanism related to the resistance change. The electrical properties of SrTiO 3 (STO) can be modulated from a band insulator to metallic conduction by a self-doping with oxygen vacancies which act as shallow donors. A local accumulation or depletion of oxygen vacancies at the vicinity of the surface will lead to a local redox process which is responsible for the resistance change. To study the influence of the interfaces on the switching properties of SrTiO 3 thin films, epitaxial films of Fe-doped SrTiO 3 were grown on different bottom electrodes (SrRuO 3 , LaNiO 3 und Nb:STO) by a ''Pulsed Laser Deposition'' technique. An atomic force microscope equipped with a conductive tip (LC-AFM) allowed studying the conductivity of the deposited films on the nanometer scale. Resistive switching of lateral structures smaller than ∝5 nm could be realized which represents the potential of this material for a further downscaling of RRAM devices. The deposition of top electrodes, made of Platinum or Titanium, allowed the electrical characterization of metal-insulator-metal (MIM) structures. An extensive investigation of pristine MIM-devices by impedance spectroscopy showed the big impact of the metal-insulator interface on the overall device resistance. Furthermore, a chemical polarization was studied by dynamical current sweeps and identified as a volatile resistance variation. Usually a forming procedure is needed to ''enable'' the resistive switching properties in MIM devices. The electroforming of these devices was extensively studied and could be

  1. Thin-film dye sensitization and impurity effects on TiO2 and SrTiO3 electrodes for the photoelectrolysis of water

    NARCIS (Netherlands)

    Mackor, A.; Schoonman, J.

    1980-01-01

    Single crystals of TiO2 and SrTiO3 are sensitized by thin films of a ruthenium surfactant dye, which is able to sustain catalytic oxidation of water upon irradiation with visible light. Calculated turnover numbers exceed 2000. Doping of the crystals with niobium does not improve the suitability of

  2. Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions

    Science.gov (United States)

    Chambers, Scott A.; Kaspar, Tiffany C.; Prakash, Abhinav; Haugstad, Greg; Jalan, Bharat

    2016-04-01

    We have spectroscopically determined the optical bandgaps and band offsets at epitaxial interfaces of BaSnO3 with SrTiO3(001) and LaAlO3(001). 28 u.c. BaSnO3 epitaxial films exhibit direct and indirect bandgaps of 3.56 ± 0.05 eV and 2.93 ± 0.05 eV, respectively. The lack of a significant Burstein-Moss shift corroborates the highly insulating, defect-free nature of the BaSnO3 films. The conduction band minimum is lower in electron energy in 5 u.c. films of BaSnO3 than in SrTiO3 and LaAlO3 by 0.4 ± 0.2 eV and 3.7 ± 0.2 eV, respectively. This result bodes well for the realization of oxide-based, high-mobility, two-dimensional electron systems that can operate at ambient temperature, since electrons generated in the SrTiO3 by modulation doping, or at the BaSnO3/LaAlO3 interface by polarization doping, can be transferred to and at least partially confined in the BaSnO3 film.

  3. Synthesis of BiFeO3 thin films on single-terminated Nb : SrTiO3 (111 substrates by intermittent microwave assisted hydrothermal method

    Directory of Open Access Journals (Sweden)

    Ivan Velasco-Davalos

    2016-06-01

    Full Text Available We report on a simple and fast procedure to create arrays of atomically flat terraces on single crystal SrTiO3 (111 substrates and the deposition of ferroelectric BiFeO3 thin films on such single-terminated surfaces. A microwave-assisted hydrothermal method in deionized water and ammonia solution selectively removes either (SrO34− or Ti4+ layers to ensure the same chemical termination on all terraces. Measured step heights of 0.225 nm (d111 and uniform contrast in the phase image of the terraces confirm the single termination in pure and Nb doped SrTiO3 single crystal substrates. Multiferroic BiFeO3 thin films were then deposited by the same microwave assisted hydrothermal process on Nb : SrTiO3 (111 substrates. Bi(NO33 and Fe(NO33 along with KOH served as the precursors solution. Ferroelectric behavior of the BiFeO3 films on Nb : SrTiO3 (100 substrates was verified by piezoresponse force microscopy.

  4. Structural and functional properties of La1-xBaxMnO3 thin films on SrTiO3

    International Nuclear Information System (INIS)

    Belenchuk, A.; Kantser, V.; Shapoval, O.; Zasavitsky, E.; Moshnyaga, V.

    2011-01-01

    Full text: Colossal magneto resistive manganites such as La 1-x Ba x MnO3 (LBMO) show a reach diversity of a attractive physical properties and the epitaxy of manganites has figured conspicuously in the search for new generations of electronic materials for information processing, data storage, and sensing. All applications require manganite films with a smooth morphology and perfect functional properties such as a large magnetization and a small residual resistivity. We investigated the structural and functional properties of the epitaxial LBMO thin films grown on the near perfect matched SrTiO 3 substrates by metalorganic aerosol deposition technique. AFM surface analysis shows a very smooth films surface indicating the layer-by-layer growth mode. The occurrence of a distinct Laue thickness fringes in X-ray diffraction spectra indicates a high quality single-crystalline growth of an uniformly strained LBMO films. But the small-angle x-ray scattering reveals the presence of a few unit cells intermediate layer with a modified electronic density. Transport measurements determine a high metal-insulator transition temperature (T MI >340 K) confirming near optimal Ba doping of LBMO with the residual resistivity of 350 μΩcm at 50 K. According to the inductive coupled plasma emission spectroscopy analysis the LBMO has level of Ba doping x=0.32. However, SQUID magnetization measurements reveal the coexistence of a high Curie temperature (T C =335 K) and a low coercitive field (27-30 Oe) with a reduced saturation magnetization (∼3 μ B /Mn) and broadened para-ferromagnetic transition. The presence of magnetic phase inhomogeneity can be further revealed from the form of low-temperature magnetization loops. We discuss the results within the concept of a 'hidden' magnetic layer situated close to the film-substrate interface and the presence of magnetic phase separation phenomenon in the main part of the LBMO film. (authors)

  5. Physical characteristics and magnetic properties of BaFe12O19/SrTiO3 based composites derived from mechanical alloying

    International Nuclear Information System (INIS)

    Widodo, Rahmat Doni; Manaf, Azwar

    2016-01-01

    A composite system BaFe 12 O 19 /SrTiO 3 with ferrimagnetic BaFe 12 O 19 phase (BHF) and ferroelectric SrTiO 3 phase (STO) have been prepared by mechanical alloying and subsequent heat treatment. The composite powders were studied by Particle Size Analyze, X-ray diffraction and magnetic measurement. It was found that the particle size of composite powders initially increased due to laminated layers formation of a composite and then decreased to an asymptotic value of ∼8 µm as the milling time extended even to a relatively longer time. However, based on results of line broadening analysis the mean grain size of the particles was found in the nanometer scale. We thus believed that mechanical blending and milling of mixture components for the composite materials has promoted heterogeneous nucleation and only after successive sintering at 1100°C the milled powder transformed into particles of nanograin. In this report, microstructure as well as magnetic properties for the composite is also briefly discussed.

  6. Roto-flexoelectric coupling impact on the phase diagrams and pyroelectricity of thin SrTiO3 films

    Science.gov (United States)

    Morozovska, Anna N.; Eliseev, Eugene A.; Bravina, Svetlana L.; Borisevich, Albina Y.; Kalinin, Sergei V.

    2012-09-01

    The influence of the flexoelectric and rotostriction coupling on the phase diagrams of ferroelastic-quantum paraelectric SrTiO3 films was studied using Landau-Ginzburg-Devonshire theory. The phase diagrams in coordinates temperature-film thickness were calculated for different epitaxial misfit strains. Tensile misfit strains stimulate appearance of the spontaneous out-of-plane structural order parameter (displacement vector of an appropriate oxygen atom from its cubic position) in the structural phase. Compressive misfit strains stimulate appearance of the spontaneous in-plane structural order parameter. Gradients of the structural order parameter components, which inevitably exist in the vicinity of film surfaces due to the termination and symmetry breaking, induce improper polarization and pyroelectric response via the flexoelectric and rotostriction coupling mechanism. Flexoelectric and rotostriction coupling results in the roto-flexoelectric field that is antisymmetric inside the film, small in the central part of the film, where the gradients of the structural parameter are small, and maximal near the surfaces, where the gradients of the structural parameter are highest. The field induces improper polarization and pyroelectric response. Penetration depths of the improper phases (both polar and structural) can reach several nm from the film surfaces. An improper pyroelectric response of thin films is high enough to be registered with planar-type electrode configurations by conventional pyroelectric methods.

  7. Effect of oxygen content on the transport properties of La-doped SrTiO 3 thin films

    Science.gov (United States)

    Liang, S.; Wang, D. J.; Sun, J. R.; Shen, B. G.

    2008-12-01

    We report on the study of the transport property of La-doped SrTiO 3 thin films grown by pulsed laser deposition (PLD) method under the oxygen pressures of 0.1 Pa, 1 Pa and 10 Pa. With the increase of oxygen pressure, resistivity of the samples is enhanced markedly. A metal-to-insulator transition appears in all the films at low temperatures. The Hall effect has been studied to obtain the information on carrier density and Hall mobility. An electron-like character and temperature-dependent carrier density have been found. It shows a monotonic decrease with the increase of oxygen pressure. This phenomenon can be ascribed to the cation vacancies induced by excessive oxygen in the films. The Hall mobility also exhibits obvious dependence on oxygen pressure. Due to the inelastic scattering strength of electrons, the transport behavior in metallic region can be described by the T2 law or small-polaron coherent conduction model.

  8. Near-surface effects of transient oxidation and reduction on Nb-doped SrTiO3 epitaxial thin films

    Science.gov (United States)

    Chang, C. F.; Chen, Q. Y.; Wadekar, P. V.; Lozano, O.; Wong, M. S.; Hsieh, W. C.; Lin, W. Y.; Ko, H. H.; Lin, Q. J.; Huang, H. C.; Ho, N. J.; Tu, L. W.; Liao, H. H.; Chinta, P. V.; Chu, W. K.; Seo, H. W.

    2014-03-01

    We studied the effects of transient oxidation and reduction of Nb-doped epitaxial thin films through variations of PAr and PO2. The samples were prepared by co-sputtering of Nb and SrTiO3 on LaAlO3 substrates. The Nb-content were varied from 0-33.7%, as determined by PIXE. Contact resistance, sheet resistance, and optical properties are used to discriminate the effects.

  9. Elemental intermixing within an ultrathin SrRuO3 electrode layer in epitaxial heterostructure BaTiO3/SrRuO3/SrTiO3

    Directory of Open Access Journals (Sweden)

    H. B. Zhang

    2016-01-01

    Full Text Available Aberration corrected scanning transmission electron microscopy is used to directly observe atom columns in an epitaxial BaTiO3 thin film deposited on a 3.6 nm-thick SrRuO3 electrode layer above an SrTiO3 (001 substrate. Compositional gradients across the heterointerfaces were examined using electron energy-loss spectroscopy techniques. It was found that a small amount of Ba and Ti had diffused into the SrRuO3 layer, and that this layer contained a non-negligible concentration of oxygen vacancies. Such point defects are expected to degrade the electrode’s electronic conductivity drastically, resulting in a much longer screening length. This may explain the discrepancy between experimental measurements and theoretical estimates of the ferroelectric critical thickness of a BaTiO3 ferroelectric barrier sandwiched between metallic SrRuO3 electrodes, since theoretical calculations generally assume ideal (stoichiometric perovskite SrRuO3.

  10. Micro-spectroscopic investigation of valence change processes in resistive switching SrTiO3 thin films

    International Nuclear Information System (INIS)

    Koehl, Annemarie

    2014-01-01

    Due to physical limitations of the currently used flash memory in terms of writing speed and scalability, new concepts for data storage attract great interest. A possible alternative with promising characteristics are so-called ''Resistive Random Access Memories'' (ReRAM). These memory devices are based on the resistive switching effect where the electrical resistance of a metal-insulator-metal (MIM) structure can be switched reversibly by a current or voltage pulse. Although this effect attracted wide scientific as well as commercial interest, up to now the it is not fully understood on a microscopic scale. Consequently, in this work the chemical and physical modifications caused by the resistive switching process are studied by spectroscopic techniques. As most switching models predict a strongly localized rather than a homogeneous effect, advanced micro-spectroscopy techniques are employed where additionally the lateral structure of the sample is imaged. In this work Fe-doped SrTiO 3 films are used as model material due to the thorough understanding of their defect chemistry. The epitaxial thin films are prepared by pulsed laser deposition. In a first approach, transmission X-ray microscopy is employed to study the bulk properties of ReRAM devices. At first, a new procedure for sample preparation based on a selective etching process is developed in order to realize photon-transparent samples. Investigations of switched devices reveal a significant contribution of Ti 3+ states within growth defects. In contrast to the indirect evidence in previous studies, this observation directly confirms that the resistance change is based on a local redox-process. The localization of the switching process within the growth defects is explained by a self-accelerating process due to Joule heating within the pre-reduced defects. In a second approach, after removal of the top electrode the chemical and electronic structure of the former interface between the

  11. (119) Bi-2223 thin films grown by MOCVD on (100) NdGaO3 and (110) SrTiO3

    Science.gov (United States)

    Endo, Kazuhiro; Badica, P.

    2002-11-01

    In high temperature superconductors (HTS) the coherence length along non-c axis directions is longer. This feature can be useful wh en designing electronics devices based on HTS. Therefore growth and characterization of non-c axis oriented thin HTS films is of great interest. In this paper we present a short review of our data regarding (119) Bi-2223 thin films grown by MOCVD on (100) NdGaO3 and (110) SrTiO3. The emphasis is made on improvement and control of the quality of the films by the "two-temperature" technological approach and/or use of the vicinal substrates. Phase and morphology evolution for different processing conditions, substrate's type and off-angle are presented. The highest critical temperatures of Tc0=67.2 K and Tc0=74 K for the "single" and "two-"temperature routes were obtained on vicinal SrTiO3 with the off-angle of 20°. A higher off-angle promoted the formation of a specific step-like morphology with lower roughness. For the films grown on flat substrates the morphology was of mountain-range shape. Surface morphology as a result of two types of growth mechanisms (two-dimensional (2D), assisted by a so-called "twin"-growth and step-flow growth) for the (119)Bi-2223 filmes are discussed.

  12. Multiferroics properties in BiFeO3/CoFe2O4 heterostructures thin films deposited on (111) SrTiO3

    Science.gov (United States)

    Singh, Gulab; Singh, Manoj K.; Kumar, Aditya; Dussan, S.; Katiyar, Ram S.

    2016-05-01

    The multiferroic properties of BiFeO3-CoFe2O4 (BFO-CFO) heterostructures thin film grown on (111) SrTiO3 (STO) substrates by employing pulsed laser deposition (PLD) method, have been studied.X ray diffraction analysis reveals the presence of BFO and CFO in two separate phases. The heterostructures BFO/CFO/STO(111) thin films show well - shaped hysteresis loop with saturated magnetization and coercive field, which are much larger than pure BFO/STO thin film. The frequency dependent dielectric anomalies in BFO-CFO multilayer are attributed to the interfacial effect across the presence of CFO as a separate phase embedded in BFO matrix.

  13. Pulsed Laser Deposition of BaTiO3 Thin Films on Different Substrates

    Directory of Open Access Journals (Sweden)

    Yaodong Yang

    2010-01-01

    Full Text Available We have studied the deposition of BaTiO3 (BTO thin films on various substrates. Three representative substrates were selected from different types of material systems: (i SrTiO3 single crystals as a typical oxide, (ii Si wafers as a semiconductor, and (iii Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.

  14. Bipolar and unipolar resistive switching behaviors of sol–gel-derived SrTiO3 thin films with different compliance currents

    International Nuclear Information System (INIS)

    Tang, M H; Wang, Z P; Zeng, Z Q; Xu, X L; Wang, G Y; Zhang, L B; Xiao, Y G; Yang, S B; Jiang, B; Li, J C; He, J

    2011-01-01

    The SrTiO 3 (STO) thin films on a Pt/Ti/SiO 2 /Si substrate were synthesized using a sol–gel method to form a metal–insulator–metal structure. This device shows the bipolar resistance switching (BRS) behavior for a compliance current I cc of less than 0.1 mA but exhibits soft breakdown at a higher level of compliance current. A transition from the BRS behavior to the stable unipolar resistive switching behavior (URS) was also observed. We found that the BRS behavior may be controlled by the structure interface while the URS behavior is likely bulk controlled. Our study indicates that the external compliance current is a key factor in resistance switching phenomenon of STO thin films

  15. Growth and characterization of textured YBaCo2O5+δ thin films grown on (001)-SrTiO3 via DC magnetron sputtering

    International Nuclear Information System (INIS)

    Galeano, V.; Arnache, O.; Supelano, I.; Vargas, C.A. Parra; Morán, O.

    2016-01-01

    Thin films of the layered cobaltite YBaCo 2 O 5+δ were successfully grown on (001)-oriented SrTiO 3 single-crystal substrates by means of DC magnetron sputtering. The 112 phase of the compound was stabilized by choosing an adequate Co reactant and through careful thermal treatment of the target. The results demonstrate the strong influence of these variables on the final phase of the compound. A substrate temperature of 1053 K and an oxygen pressure of 300 Pa seemed to be appropriate growing conditions for depositing (00ℓ)-textured YBaCo 2 O 5+δ thin films onto the chosen substrate. In like fashion to the polycrystalline YBaCo 2 O 5+δ , the films showed a clear sequence of antiferromagnetic–ferromagnetic–paramagnetic transitions within a narrow temperature range. Well-defined hysteresis loops were observed at temperatures as high as 270 K, which supports the existence of a FM order in the films. In turn, the dependence of the resistivity on the temperature shows a semiconductor-like behavior, without any distinguishable structure, within the temperature range measured (50–350 K). The analysis of the experimental data showed that the transport mechanism in the films is well described by using the Mott variable range hopping (VRH) conduction model. - Highlights: • YBaCo 2 O 5+δ thin films are grown on SrTiO 3 substrates. • Strong (00ℓ) reflections are observed in the X-ray diffraction pattern. • A clear sequence of magnetic transitions is observed. • Semiconducting-like behavior is verified.

  16. Untilting BiFeO3: The influence of substrate boundary conditions in ultra-thin BiFeO3 on SrTiO3

    Directory of Open Access Journals (Sweden)

    Yongsoo Yang

    2013-11-01

    Full Text Available We report on the role of oxygen octahedral tilting in the monoclinic-to-tetragonal phase transition in ultra-thin BiFeO3 films grown on (001 SrTiO3 substrates. Reciprocal space maps clearly show the disappearance of the integer-order Bragg peak splitting associated with the monoclinic phase when the film thickness decreases below 20 unit cells. This monoclinic-to-tetragonal transition is accompanied by the evolution of the half-order diffraction peaks, which reflects untilting of the oxygen octahedra around the [110] axis, proving that the octahedral tilting is closely correlated with the transition. This structural change is thickness-dependent, and different from a strain-induced transition in the conventional sense.

  17. Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO3).

    Science.gov (United States)

    Chen, Jie; Morrow, Darien J; Fu, Yongping; Zheng, Weihao; Zhao, Yuzhou; Dang, Lianna; Stolt, Matthew J; Kohler, Daniel D; Wang, Xiaoxia; Czech, Kyle J; Hautzinger, Matthew P; Shen, Shaohua; Guo, Liejin; Pan, Anlian; Wright, John C; Jin, Song

    2017-09-27

    High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr 3 ) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO 3 (100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcoming the limitation of island-forming Volmer-Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr 3 epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (10 4 cm s -1 ), and low defect density of 10 12 cm -3 , which are comparable to those of CsPbBr 3 single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. The high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunities for a variety of high-performance optoelectronics devices.

  18. Topological crystalline insulator PbxSn1-xTe thin films on SrTiO3 (001 with tunable Fermi levels

    Directory of Open Access Journals (Sweden)

    Hua Guo

    2014-05-01

    Full Text Available In this letter, we report a systematic study of topological crystalline insulator PbxSn1-xTe (0 < x < 1 thin films grown by molecular beam epitaxy on SrTiO3(001. Two domains of PbxSn1-xTe thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES. ARPES study of PbxSn1-xTe thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of PbxSn1-xTe thin films.

  19. Dielectric and ferroelectric properties of strain-relieved epitaxial lead-free KNN-LT-LS ferroelectric thin films on SrTiO3 substrates

    Science.gov (United States)

    Abazari, M.; Akdoǧan, E. K.; Safari, A.

    2008-05-01

    We report the growth of single-phase (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated ⟨001⟩ oriented SrTiO3 substrates by using pulsed laser deposition. Films grown at 600°C under low laser fluence exhibit a ⟨001⟩ textured columnar grained nanostructure, which coalesce with increasing deposition temperature, leading to a uniform fully epitaxial highly stoichiometric film at 750°C. However, films deposited at lower temperatures exhibit compositional fluctuations as verified by Rutherford backscattering spectroscopy. The epitaxial films of 400-600nm thickness have a room temperature relative permittivity of ˜750 and a loss tangent of ˜6% at 1kHz. The room temperature remnant polarization of the films is 4μC /cm2, while the saturation polarization is 7.1μC/cm2 at 24kV/cm and the coercive field is ˜7.3kV/cm. The results indicate that approximately 50% of the bulk permittivity and 20% of bulk spontaneous polarization can be retained in submicron epitaxial KNN-LT-LS thin film, respectively. The conductivity of the films remains to be a challenge as evidenced by the high loss tangent, leakage currents, and broad hysteresis loops.

  20. Aspects of electron-phonon interactions with strong forward scattering in FeSe Thin Films on SrTiO3 substrates

    Science.gov (United States)

    Wang, Y.; Nakatsukasa, K.; Rademaker, L.; Berlijn, T.; Johnston, S.

    2016-05-01

    Mono- and multilayer FeSe thin films grown on SrTiO3 and BiTiO3 substrates exhibit a greatly enhanced superconductivity over that found in bulk FeSe. A number of proposals have been advanced for the mechanism of this enhancement. One possibility is the introduction of a cross-interface electron-phonon (e-ph) interaction between the FeSe electrons and oxygen phonons in the substrates that is peaked in the forward scattering (small {q}) direction due to the two-dimensional nature of the interface system. Motivated by this, we explore the consequences of such an interaction on the superconducting state and electronic structure of a two-dimensional system using Migdal-Eliashberg (ME) theory. This interaction produces not only deviations from the expectations of conventional phonon-mediated pairing but also replica structures in the spectral function and density of states, as probed by angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy, and quasiparticle interference imaging. We also discuss the applicability of ME theory for a situation where the e-ph interaction is peaked at small momentum transfer and in the FeSe/STO system.

  1. Structural characterization of niobium oxide thin films grown on SrTiO3 (111) and (La,Sr)(Al,Ta)O3 (111) substrates

    Science.gov (United States)

    Dhamdhere, Ajit R.; Hadamek, Tobias; Posadas, Agham B.; Demkov, Alexander A.; Smith, David J.

    2016-12-01

    Niobium oxide thin films have been grown by molecular beam epitaxy on SrTiO3 (STO) (111) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT) (111) substrates. Transmission electron microscopy (TEM) confirmed the formation of high quality films with coherent interfaces. Films grown with higher oxygen pressure on STO (111) resulted in a (110)-oriented NbO2 phase with a distorted rutile structure, which can be described as body-centered tetragonal. The a lattice parameter of NbO2 was determined to be ˜13.8 Å in good agreement with neutron diffraction results published in the literature. Films grown on LSAT (111) at lower oxygen pressure produced the NbO phase with a defective rock salt cubic structure. The NbO lattice parameter was determined to be a ≈ 4.26 Å. The film phase/structure identification from TEM was in good agreement with in situ x-ray photoelectron spectroscopy measurements that confirmed the dioxide and monoxide phases, respectively. The atomic structure of the NbO2/STO and NbO/LSAT interfaces was determined based on comparisons between high-resolution electron micrographs and image simulations.

  2. Effect of oxygen vacancy distribution on the thermoelectric properties of La-doped SrTiO3 epitaxial thin films

    KAUST Repository

    Sarath Kumar, S. R.

    2012-12-03

    A detailed study of the role of oxygen vacancies in determining the effective mass and high temperature (300–1000 K) thermoelectricproperties of La-doped epitaxial SrTiO3 thin films is presented. It is observed that at intermediate temperatures, a transition from degenerate to non-degenerate behavior is observed in the Seebeck coefficient, but not electrical conductivity, which is attributed to heterogeneous oxygen non-stoichiometry. Heikes formula is found to be invalid for the films with oxygen vacancies. By fitting the spectroscopic ellipsometry (SE) data, obtained in the range 300–2100 nm, using a Drude-Lorentz dispersion relation with two Lorentz oscillators, the electrical and optical properties of the films are extracted. Using the excellent agreement between the transport properties extracted from SE modeling and direct electrical measurements, we demonstrate that an increase in concentration of oxygen vacancies results in a simultaneous increase of both carrier concentration and electron effective mass, resulting in a higher power factor.

  3. Structural and thermal characterization of La5Ca9Cu24O41 thin films grown by pulsed laser deposition on (1 1 0) SrTiO3 substrates

    International Nuclear Information System (INIS)

    Svoukis, E.; Athanasopoulos, G.I.; Altantzis, Th.; Lioutas, Ch.; Martin, R.S.; Revcolevschi, A.; Giapintzakis, J.

    2012-01-01

    In the present study stoichiometric, b-axis oriented La 5 Ca 9 Cu 24 O 41 thin films were grown by pulsed laser deposition on (1 1 0) SrTiO 3 substrates in the temperature range 600–750 °C. High resolution transmission electron microscopy was employed to investigate the growth mechanism and the epitaxial relationship between the SrTiO 3 substrates and the La 5 Ca 9 Cu 24 O 41 films grown at 700 °C. The 3-ω method was used to measure the cross-plane thermal conductivity of La 5 Ca 9 Cu 24 O 41 films in the temperature range 50–350 K. The observed glass-like behavior is attributed to atomic-scale defects, grain boundaries and an interfacial layer formed between film and substrate.

  4. UV-laser-light-controlled photoluminescence of metal oxide nanoparticles in different gas atmospheres: BaTiO3, SrTiO3 and HfO2

    International Nuclear Information System (INIS)

    Mochizuki, Shosuke; Saito, Takashi; Yoshida, Kaori

    2012-01-01

    The photoluminescence (PL) enhancement has been studied at room temperature using various specimen atmospheres (O 2 gas, CO 2 gas, CO 2 -H 2 mixture gas, Ar-H 2 mixture gas and vacuum) under 325 nm laser light irradiation on various metal oxides. Of them, the results obtained for BaTiO 3 nanocrystals, SrTiO 3 ones and HfO 2 powder crystal are given in the present paper. Their PL were considerably increased in intensity by irradiation of 325 nm laser light in CO 2 gas and CO 2 -H 2 mixture gas. The cause of the PL intensity enhancements is discussed in the light of the exciton theory, the defect chemistry and the photocatalytic theory. The results may be applied for the utilization of greenhouse gas (CO 2 ) and the optical sensor for CO 2 gas.

  5. Ferroelectric domain structures of epitaxial CaBi2Nb2O9 thin films on single crystalline Nb doped (1 0 0) SrTiO3 substrates

    Science.gov (United States)

    Ahn, Yoonho; Seo, Jeong Dae; Son, Jong Yeog

    2015-07-01

    Epitaxial CaBi2Nb2O9 (CBNO) thin films were deposited on Nb-doped SrTiO3 substrates. The CBNO thin films as a lead-free ferroelectric material exhibit a good ferroelectric property with the remanent polarization of 10.6 μC/cm2. In the fatigue resistance test, the CBNO thin films have no degradation in polarization up to 1×1012 switching cycles, which is applicable for non-volatile ferroelectric random access memories (FeRAMs). Furthermore, piezoresponse force microscopy study (PFM) reveals that the CBNO thin films have larger ferroelectric domain structures than those of PbTiO3 thin films. From the Landau, Lifshiftz, and Kittel's scaling law, it is inferred that the domain wall energy of CBNO thin films is probably very similar to that of the PbTiO3 thin films.

  6. Effects of doping on ferroelectric properties and leakage current behavior of KNN-LT-LS thin films on SrTiO3 substrate

    Science.gov (United States)

    Abazari, M.; Safari, A.

    2009-05-01

    We report the effects of Ba, Ti, and Mn dopants on ferroelectric polarization and leakage current of (K0.44Na0.52Li0.04)(Nb0.84Ta0.1Sb0.06)O3 (KNN-LT-LS) thin films deposited by pulsed laser deposition. It is shown that donor dopants such as Ba2+, which increased the resistivity in bulk KNN-LT-LS, had an opposite effect in the thin film. Ti4+ as an acceptor B-site dopant reduces the leakage current by an order of magnitude, while the polarization values showed a slight degradation. Mn4+, however, was found to effectively suppress the leakage current by over two orders of magnitude while enhancing the polarization, with 15 and 23 μC/cm2 remanent and saturated polarization, whose values are ˜70% and 82% of the reported values for bulk composition. This phenomenon has been associated with the dual effect of Mn4+ in KNN-LT-LS thin film, by substituting both A- and B-site cations. A detailed description on how each dopant affects the concentrations of vacancies in the lattice is presented. Mn-doped KNN-LT-LS thin films are shown to be a promising candidate for lead-free thin films and applications.

  7. Characterization of SrTiO3 target doped with Co ions, SrCoxTi1-xO3-δ, and their thin films prepared by pulsed laser ablation (PLA) in water for visible light response

    Science.gov (United States)

    Ichihara, Fumihiko; Murata, Yuma; Ono, Hiroshi; Choo, Cheow-keong; Tanaka, Katsumi

    2017-10-01

    SrTiO3 (STO) and Co-doped SrTiO3 (Co-STO) sintered targets were synthesized and were Ar+ sputtered to elucidate the charge compensation effect between Sr, Ti and Co cations following the reduction by oxygen desorption. Following exposure of the Ar+-sputtered target to the air, charge transfer reactions occurred among Co2+, Ti3+, O2- and Sr2+ species which were studied by their XPS spectra. Pulsed laser ablation (PLA) of these targets was carried out in water to prepare the nanoparticles which could be supplied to the thin films with much higher surface reactivity expected for photocatalytic reactions. The roles of Co ions were studied for the stoichiometry and crystallinity of the nanoparticles which constituted the thin films. Photo-degradation of methylene blue was carried out on the PLA thin films under very weak visible light at 460 nm. The PLA thin films showed the photocatalytic activities, which were enhanced by the presence of Co ions. Such the effect of Co ions was considered from viewpoint of the d-d transition and the charge-transfer between Co ions and the ligand oxygen.

  8. Study on electrical properties of Ni-doped SrTiO3 ceramics using ...

    Indian Academy of Sciences (India)

    Unknown

    Ni doped SrTiO3; impedance spectroscopy; grain; grain boundary; acceptor. 1. Introduction. In commercial multilayer ceramic capacitors (MLCs), perovskite structure titanate are frequently used as high permittivity dielectrics. Alkaline earth titanates like BaTiO3,. SrTiO3 etc are widely used in microelectronic devices.

  9. Interface structure and electronic properties of SrTiO3 and YBa2Cu3O7-δ crystals and thin films

    International Nuclear Information System (INIS)

    Thiess, S.

    2007-01-01

    Two new extensions of the X-ray standing wave (XSW) technique, made possible by the intense highly collimated X-ray beams from undulators at the ESRF, are described in this thesis. First, the XSW method was applied in a structural study to solve the nucleation mechanism of the high temperature superconductor YBa 2 Cu 3 O 7-δ on the (001) surface of SrTiO 3 . Second, the valence electronic structures of SrTiO 3 and YBa 2 Cu 3 O 7-δ were investigated. Finally, recent developments in the field of photoelectron spectroscopy in the hard X-ray region are described. The X-ray standing wave method is used in combination with fluorescence, Auger or photoelectron spectroscopy and lends very high spatial resolution power to these analytical techniques. Previously, the XSW method has been used for structure determination of surfaces and interfaces. The currently available X-ray intensities permit extensions to the XSW technique. Two recently established applications, described in this thesis, are XSW real space imaging and XSW valence electronic structure analysis. XSW real space imaging was employed to analyse the atomic structure of 0.5 and 1.0 layers of YBa 2 Cu 3 O 7-δ deposited on SrTiO 3 (001). Three-dimensional images of the atomic distributions were reconstructed for each of the elements from experimentally determined Fourier components of the atomic distribution functions. The images confirmed the formation of a perovskite precursor phase prior to the formation of the YBa 2 Cu 3 O 7-δ phase during the growth of the first monolayer of the film. XSW valence electronic structure analysis applied to SrTiO 3 identified the valence band contributions arising from the strontium, titanium, and oxygen sites of the crystal lattice. Relations between the site-specific valence electronic structure and the lattice structure were established. The experimental results agree very well with predictions by state-of-the-art ab initio calculations. X-ray absorption cross sections for valence states of the solid were determined. Applied to YBa 2 Cu 3 O 7-δ , the XSW valence electronic structure analysis revealed the local electronic structures at the two nonequivalent copper sites to be similar, in contrast to theoretical predictions. (orig.)

  10. Optimization of Strontium Titanate (SrTiO3) Thin Films Fabricated by Metal Organic Chemical Vapor Deposition (MOCVD) for Microwave-Tunable Devices

    Science.gov (United States)

    2015-12-01

    sccm was used, along with a supplemented oxygen ( O2 ) flow of 1,000 sccm to mitigate O2 vacancies and nonstoichiometry. Prior to sample loading and...growth pressure of 15 Torr for 60 min at a total precursor mass flow rate of 60 μmole/min. The sample was annealed at 750 °C for 60 min in an O2 gas...HT. Reduction of pinhole leakage current of SrTiO3 films by ARF excimer-laser deposition with shadow mask (eclipse method). Japanese Journal of

  11. Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1−xRuO3-buffered SrTiO3 substrates

    KAUST Repository

    Yao, Yingbang

    2012-06-01

    (001)-oriented BiFeO 3 (BFO) thin films were grown on Sr xCa 1-xRuO 3- (SCRO; x = 1, 0.67, 0.33, 0) buffered SrTiO 3 (001) substrates using pulsed laser deposition. The microstructural, electrical, ferroelectric, and piezoelectric properties of the thin films were considerably affected by the buffer layers. The interface between the BFO films and the SCRO-buffer layer was found to play a dominant role in determining the electrical and piezoelectric behaviors of the films. We found that films grown on SrRuO 3-buffer layers exhibited minimal electrical leakage while films grown on Sr 0.33Ca 0.67RuO 3-buffer layers had the largest piezoelectric response. The origin of this difference is discussed. © 2012 American Institute of Physics.

  12. Misfit dislocations of anisotropic magnetoresistant Nd0.45Sr0.55MnO3 thin films grown on SrTiO3 (1 1 0) substrates

    International Nuclear Information System (INIS)

    Tang, Y.L.; Zhu, Y.L.; Meng, H.; Zhang, Y.Q.; Ma, X.L.

    2012-01-01

    Nd 0.45 Sr 0.55 MnO 3 is an A-type antiferromagnetic manganite showing obvious angular-dependent magnetoresistance, which can be tuned by misfit strain. The misfit strain relaxation of Nd 0.45 Sr 0.55 MnO 3 thin films is of both fundamental and technical importance. In this paper, microstructures of epitaxial Nd 0.45 Sr 0.55 MnO 3 thin films grown on SrTiO 3 (1 1 0) substrates by pulsed laser deposition were investigated by means of (scanning) transmission electron microscopy. The Nd 0.45 Sr 0.55 MnO 3 thin films exhibit a two-layered structure: a continuous perovskite layer epitaxial grown on the substrate followed by epitaxially grown columnar nanostructures. An approximately periodic array of misfit dislocations is found along the interface with line directions of both 〈1 1 1〉 and [0 0 1]. High-resolution (scanning) transmission electron microscopy reveals that all the misfit dislocations possess a〈1 1 0〉-type Burgers vectors. A formation mechanism based on gliding or climbing of the dislocations is proposed to elucidate this novel misfit dislocation configuration. These misfit dislocations have complex effects on the strain relaxation and microstructure of the films, and thus their influence needs further consideration for heteroepitaxial perovskite thin film systems, especially for films grown on substrates with low-symmetry surfaces such as SrTiO 3 (1 1 0) and (1 1 1), which are attracting attention for their potentially new functions.

  13. Deposition and patterning of Tl-Ca-Ba-Cu-O superconducting thin films

    International Nuclear Information System (INIS)

    Subramanyam, G.; Radpour, F.; Kapoor, V.J.; Lemon, G.H.

    1990-01-01

    This paper reports on high temperature superconducting Tl-Ca-Ba-Cu-O which were sputter deposited from a single composite powder target on SrTiO 3 and LaAlO 3 substrates, in an rf magnetron sputtering system. The as-deposited thin films were sintered and annealed in an excess Tl partial pressure to obtain superconductivity. The superconducting films were characterized by scanning electron microscope (SEM), x-ray diffraction (XRD) and resistance vs temperature (R vs T) measurements. Fine line features as small as 25 μm were obtained in as-deposited thin films using standard photolithography and wet chemical etching in a weak acid. From the XRD and SEM results, the annealed thin films were found to be highly c-axis oriented, with smooth platelets of 2-10 μm in size. The R vs T measurements showed zero resistance at temperatures as high as 107 K on SrTiO 3 and 103 K on LaAlO 3

  14. Correlation between atomic structure and magnetic properties of La0.7Ca0.3MnO3 thin films grown on SrTiO3 (1 0 0)

    International Nuclear Information System (INIS)

    Rubio-Zuazo, J.; Andres, A. de; Taboada, S.; Prieto, C.; Martinez, J.L.; Castro, G.R.

    2005-01-01

    The crystallographic structure of La 0.7 Ca 0.3 MnO 3 (LCMO) ultra-thin films grown on SrTiO 3 (0 0 1) has been investigated by surface X-ray diffraction (SXD) and the correlation between their transport and magnetic properties and crystallographic structure is discussed. LCMO thin films in a thickness range between 2.4 and 27 nm were grown by DC-sputtering on SrTiO 3 (0 0 1). We distinguish two different crystallographic structures associated to the 2.4 and 27 nm thin films, respectively. The 27 nm film structure corresponds to a tetragonal perovskite (space group Pbnm), as has been reported for bulk LCMO. For the 2.4 nm film the La/Ca ions are located at the regular position of an ideal perovskite and the MnO 6 octahedrons are aligned along the c-axis. The MnO 2 stacking layer (basal plane) is distorted and coplanar to the a-b crystallographic axis with an anti-correlation between octahedron layers. This observed distortion is not compatible with the Pbnm space group. The new phase, which cannot be excluded to coexist at the interface of thicker films, can be described, as an example, through an I4/mcm or Pbcn space group. Based on the observed structure, plausible models to explain their transport and magnetic behaviour are proposed. For the 2.4 nm film, an octahedron in-plane (basal plane) distortion induced by the substrate is observed. Thicker films behave structurally and magnetically as bulk-like materials

  15. Anisotropic-strain-relaxation-induced crosshatch morphology in epitaxial SrTiO3/NdGaO3 thin films

    Directory of Open Access Journals (Sweden)

    X. L. Tan

    2014-10-01

    Full Text Available We investigate the strain relaxation and surface morphology of epitaxial SrTiO3 (STO films grown on (001O and (110O planes of orthorhombic NdGaO3 (NGO, and (001 plane of cubic (LaAlO30.3(Sr2AlTaO60.7 (LSAT substrates. Although the average lattice mismatches are similar, strikingly regular crosshatched surface patterns can be found on STO/NGO(001O[(110O] films, contrary to the uniform surface of STO/LSAT(001. Based on the orientation and thickness dependent patterns and high-resolution x-ray diffractions, we ascribe the crosshatch morphology to the anisotropic strain relaxation with possibly the 60° misfit dislocation formation and lateral surface step flow in STO/NGO films, while an isotropic strain relaxation in STO/LSAT. Further, we show that the crosshatched STO/NGO(110O surface could be utilized as a template to modify the magnetotransport properties of epitaxial La0.6Ca0.4MnO3 films. This study highlights the crucial role of symmetry mismatch in determining the surface morphology of the perovskite oxide films, in addition to their epitaxial strain states, and offers a different route for designing and fabricating functional perovskite-oxide devices.

  16. Above room-temperature ferromagnetism in La1-xCaxMnO3 epitaxial thin films on SrTiO3(001) substrates

    Science.gov (United States)

    Kou, Yunfang; Wang, Hui; Miao, Tian; Wang, Yanmei; Xie, Lin; Wang, Shasha; Liu, Hao; Lin, Hanxuan; Zhu, Yinyan; Wang, Wenbin; Du, Haifeng; Pan, Xiaoqing; Wu, Ruqian; Yin, Lifeng; Shen, Jian

    The colossal magnetoresistive (CMR) manganites are popular materials for spintronics applications due to their high spin polarization. Only a couple of manganites like La1-xSrxMnO3 have a Curie temperature (Tc) that is higher than room temperature. Finding methods to raise the Tc of manganites over room temperature is useful but challenging. In this work, we use the most intensively studied La1-xCaxMnO3 (LCMO) as the prototype system to demonstrate that Tc can be greatly enhanced by carefully tuning the electronic structure using doping and strain. Specifically, we grow LCMO films on SrTiO3 (001) substrates using pulsed laser deposition. Magnetic and transport measurements indicate a great enhancement of Tc over room temperature at x =0.2 doping. Theoretical calculations indicate that the combined effects from doping and strain give rise to a new electronic structure favoring ferromagnetism in LCMO system. Furthermore, using the La0.8Ca0.2MnO3 as ferromagnetic electrodes, we achieve finite tunneling magnetoresistance (TMR) above room temperature.

  17. Measurement of thermal conductance of La0.7Sr0.3MnO3 thin films deposited on SrTiO3 and MgO substrates

    Science.gov (United States)

    Aryan, A.; Guillet, B.; Routoure, J. M.; Fur, C.; Langlois, P.; Méchin, L.

    2015-01-01

    We present measurements of the thermal conductance of thin-film-on-substrate structures that could serve as thin film uncooled bolometers. Studied samples were 75 nm thick epitaxial La0.7Sr0.3MnO3 thin films deposited on SrTiO3 (0 0 1) and MgO (0 0 1) substrates patterned in square geometries of areas ranging from 50 μm × 50 μm to 200 μm × 200 μm. The model allows estimating thermal boundary conductance values at the interface between film and substrate of 0.28 ± 0.08 × 106 W K-1 m-2 for LSMO/STO (0 0 1) and 5.8 ± 3.0 × 106 W K-1 m-2 for LSMO/MgO (0 0 1) from measurements performed in the static regime. Analytical expressions of thermal conductance and thermal capacitance versus modulation frequency are compared to measurements of the elevation temperature due to absorbed incoming optical power. The overall good agreement found between measurements and model finally provides the possibility to calculate the bolometric response of thin film bolometers, thus predicting their frequency response for various geometries.

  18. Solid phase epitaxial growth of high mobility La:BaSnO3 thin films co-doped with interstitial hydrogen

    Science.gov (United States)

    Niedermeier, Christian A.; Rhode, Sneha; Fearn, Sarah; Ide, Keisuke; Moram, Michelle A.; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2016-04-01

    This work presents the solid phase epitaxial growth of high mobility La:BaSnO3 thin films on SrTiO3 single crystal substrates by crystallization through thermal annealing of nanocrystalline thin films prepared by pulsed laser deposition at room temperature. The La:BaSnO3 thin films show high epitaxial quality and Hall mobilities up to 26 ± 1 cm2/Vs. Secondary ion mass spectroscopy is used to determine the La concentration profile in the La:BaSnO3 thin films, and a 9%-16% La doping activation efficiency is obtained. An investigation of H doping to BaSnO3 thin films is presented employing H plasma treatment at room temperature. Carrier concentrations in previously insulating BaSnO3 thin films were increased to 3 × 1019 cm-3 and in La:BaSnO3 thin films from 6 × 1019 cm-3 to 1.5 × 1020 cm-3, supporting a theoretical prediction that interstitial H serves as an excellent n-type dopant. An analysis of the free electron absorption by infrared spectroscopy yields a small (H,La):BaSnO3 electron effective mass of 0.27 ± 0.05 m0 and an optical mobility of 26 ± 7 cm2/Vs. As compared to La:BaSnO3 single crystals, the smaller electron mobility in epitaxial thin films grown on SrTiO3 substrates is ascribed to threading dislocations as observed in high resolution transmission electron micrographs.

  19. Thickness dependence of microstructure in thin La0.7Sr0.3MnO3 films grown on (1 0 0) SrTiO3 substrate

    Science.gov (United States)

    Mirzadeh Vaghefi, P.; Baghizadeh, A.; Willinger, M.-G.; Pereira, M. J.; Mota, D. A.; Almeida, B. G.; Agostinho Moreira, J.; Amaral, V. S.

    2017-10-01

    This study investigates the nanostructure of perovskite thin films, and its influence on magnetic properties. Epitaxial thin films of perovskite La0.7 Sr0.3 MnO3 with thickness ranging from 13.5 nm to 320 nm were deposited on SrTiO3 (1 0 0) substrates using pulsed laser deposition techniques. X-ray diffraction, along with high-resolution transmission electron microscopy (HRTEM) investigations were carried out, and showed the presence of a second, La-rich phase in thick film. Scanning electron microscopy analysis showed thinner films to have smooth surfaces, while thicker films presented large triangular shapes emerging out of the film surface. Also HRTEM images revealed epitaxial growth for thinner films. Thicker films grow with numerous misfit dislocations leading to columnar structure, where the thickest film presents branched structure with an intermediate La-rich layer. Lattice mismatch, diffusion of Mn ions into the substrate and substituting Ti ions are known as sources of strain in films near interfaces. Magnetic properties in the structure mentioned are described by double-exchange interaction, which is very sensitive to local structure. Hence, the nanostructure of films reported here has a remarkable effect on their magnetic properties.

  20. Absence of traditional magnetoresistivity mechanisms in Sr2FeMoO6 thin films grown on SrTiO3, MgO and NdGaO3 substrates.

    Science.gov (United States)

    Saloaro, M; Majumdar, S; Huhtinen, H; Paturi, P

    2012-09-12

    Magnetoresistive double perovskite Sr(2)FeMoO(6) thin films were grown with two different deposition pressures on SrTiO(3), MgO and NdGaO(3) substrates by pulsed laser deposition and thorough structural, magnetic and magneto-transport characterization was made. According to x-ray diffraction, all the films were phase pure and fully textured. Indication of substrate dependent strain and low angle grain boundaries was found, especially in films on MgO. Both the deposition pressure and the choice of the substrate have a strong influence on the saturation magnetization, M(s), and Curie temperature, T(C). The structural and magnetic data indicate the presence of anti-site disorder (ASD) in the films. The temperature dependence of resistivity showed semiconductive behaviour at temperatures below 100 K and metallic behaviour at higher temperatures. The semiconductive behaviour was found to increase with increasing ASD. In good quality films, up to 12% negative magnetoresistance (MR) was observed and films grown on MgO and NGO substrates also showed low field MR. However, the most significant observation of this study was that the magnetoresistivity of these Sr(2)FeMoO(6) thin films could not be explained with any traditional MR mechanism, but carried the clear signature of superposition of different mechanisms, in particular low angle grain boundary tunnelling and suppression of antiferromagnetically ordered domains under a magnetic field.

  1. Preparation of (11n) oriented Bi2Sr2CaCu2O8+x thin films without c-axis twin structure by the metal-organic decomposition method using vicinal SrTiO3 (110) substrates

    Science.gov (United States)

    Yamada, Yasuyuki; Kato, Takahiro; Ishibashi, Takayuki; Okamoto, Tomoichiro; Mori, Natsuki

    2018-01-01

    We have prepared (11n) oriented Bi2Sr2CaCu2O8+x (Bi2212) thin films by metal-organic decomposition method. The vicinal (110) substrate of SrTiO3 (STO) inclined toward the [1 ¯ 10] direction was used for suppressing "c-twinning". In the sample prepared in the O2 atmosphere, only the (11n) peak appeared in the θ-2θ X-ray diffraction pattern. When the miscut angle of the substrate was φ = 10°, it was shown by the scanning electron microscope images and the (008) pole figures that the c-axis was inclined by about 38° and the c-twinning was substantially suppressed. ρab and ρc of this sample were calculated by the corrected van der Pauw method and component calculation of the two-dimensional resistivity tensor. The superconducting transition temperatures were Tc = 81 K. The temperature dependence of ρab was a typical metallic behavior reflecting the characteristics of the ab-plane of Bi2212. On the other hand, that of ρc did not become a typical semiconductor behavior in the c-axis direction of Bi2212, but it showed a metallic behavior. The anisotropic parameter γ was about 10.

  2. Strain-induced nanostructure of Pb(Mg1/3Nb2/3)O3-PbTiO3 on SrTiO3 epitaxial thin films with low PbTiO3 concentration

    Science.gov (United States)

    Kiguchi, Takanori; Fan, Cangyu; Shiraishi, Takahisa; Konno, Toyohiko J.

    2017-10-01

    The singularity of the structure in (1 - x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) (x = 0-50 mol %) epitaxial thin films of 100 nm thickness was investigated from the viewpoint of the localized residual strain in the nanoscale. The films were deposited on SrTiO3 (STO) (001) single-crystal substrates by chemical solution deposition (CSD) using metallo-organic decomposition (MOD) solutions. X-ray and electron diffraction patterns revealed that PMN-xPT thin films included a single phase of the perovskite-type structure with the cube-on-cube orientation relationship between PMN-xPT and STO: (001)Film ∥ (001)Sub, [100]Film ∥ [100]Sub. X-ray reciprocal space maps showed an in-plane tensile strain in all the compositional ranges considered. Unit cells in the films were strained from the rhombohedral (pseudocubic) (R) phase to a lower symmetry crystal system, the monoclinic (MB) phase. The morphotropic phase boundary (MPB) that split the R and tetragonal (T) phases was observed at x = 30-35 for bulk crystals of PMN-xPT, whereas the strain suppressed the transformation from the R phase to the T phase in the films up to x = 50. High-angle annular dark field-scanning transmission electron microscopy (HAADF-STEM) analysis and its related local strain analysis revealed that all of the films have a bilayer morphology. The nanoscale strained layer formed only above the film/substrate semi-coherent interface. The misfit dislocations generated the localized and periodic strain fields deformed the unit cells between the dislocation cores from the R to an another type of the monoclinic (MA) phase. Thus, the singular and localized residual strains in the PMN-xPT/STO (001) epitaxial thin films affect the phase stability around the MPB composition and result in the MPB shift phenomena.

  3. Pulsed laser deposition-induced reduction of SrTiO3 crystals

    NARCIS (Netherlands)

    Scullin, Matthew L.; Ravichandran, Jayakanth; Yu, Choongho; Huijben, Mark; Seidel, Jan; Majumdar, Arun; Ramesh, R.; Ramesh, R.

    2010-01-01

    We report a generic method for fast and efficient reduction of strontium titanate (SrTiO3, STO) single crystals by pulsed laser deposition (PLD) of thin-films. The reduction was largely independent of the thin-film material deposited on the crystals. It is shown that thermodynamic conditions (450

  4. Transport properties and pinning analysis for Co-doped BaFe2As2 thin films on metal tapes

    Science.gov (United States)

    Xu, Zhongtang; Yuan, Pusheng; Fan, Fan; Chen, Yimin; Ma, Yanwei

    2018-05-01

    We report on the transport properties and pinning analysis of BaFe1.84Co0.16As2 (Ba122:Co) thin films on metal tapes by pulsed laser deposition. The thin films exhibit a large in-plane misorientation of 5.6°, close to that of the buffer layer SrTiO3 (5.9°). Activation energy U 0(H) analysis reveals a power law relationship with field, having three different exponents at different field regions, indicative of variation from single-vortex pinning to a collective flux creep regime. The Ba122:Co coated conductors present {{T}{{c}}}{{onset}} = 20.2 K and {{T}{{c}}}{{zero}} = 19.0 K along with a self-field J c of 1.14 MA cm‑2 and an in-field J c as high as 0.98 and 0.86 MA cm‑2 up to 9 T at 4.2 K for both major crystallographic directions of the applied field, promising for high field applications. Pinning force analysis indicates a significant enhancement compared with similar Ba122:Co coated conductors. By using the anisotropic scaling approach, intrinsic pinning associated with coupling between superconducting blocks can be identified as the pinning source in the vicinity of H//ab, while for H//c random point defects are likely to play a role but correlated defects start to be active at high temperatures.

  5. Strain-gradient-induced polarization in SrTiO3 single crystals.

    Science.gov (United States)

    Zubko, P; Catalan, G; Buckley, A; Welche, P R L; Scott, J F

    2007-10-19

    Piezoelectricity is inherent only in noncentrosymmetric materials, but a piezoelectric response can also be obtained in centrosymmetric crystals if subjected to inhomogeneous deformation. This phenomenon, known as flexoelectricity, can significantly affect the functional properties of insulators, particularly thin films of high permittivity materials. We have measured strain-gradient-induced polarization in single crystals of paraelectric SrTiO3 as a function of temperature and orientation down to and below the 105 K phase transition. Estimates were obtained for all the components of the flexoelectric tensor, and calculations based on these indicate that local polarization around defects in SrTiO3 may exceed the largest ferroelectric polarizations. A sign reversal of the flexoelectric response detected below the phase transition suggests that the ferroelastic domain walls of SrTiO3 may be polar.

  6. Strain-Gradient-Induced Polarization in SrTiO3 Single Crystals

    Science.gov (United States)

    Zubko, P.; Catalan, G.; Buckley, A.; Welche, P. R. L.; Scott, J. F.

    2007-10-01

    Piezoelectricity is inherent only in noncentrosymmetric materials, but a piezoelectric response can also be obtained in centrosymmetric crystals if subjected to inhomogeneous deformation. This phenomenon, known as flexoelectricity, can significantly affect the functional properties of insulators, particularly thin films of high permittivity materials. We have measured strain-gradient-induced polarization in single crystals of paraelectric SrTiO3 as a function of temperature and orientation down to and below the 105 K phase transition. Estimates were obtained for all the components of the flexoelectric tensor, and calculations based on these indicate that local polarization around defects in SrTiO3 may exceed the largest ferroelectric polarizations. A sign reversal of the flexoelectric response detected below the phase transition suggests that the ferroelastic domain walls of SrTiO3 may be polar.

  7. Structure and Superconducting Properties of TlCan-1Ba2CunO2n+3 Thin Films with Zero Resistance at Temperatures above 100 K

    Science.gov (United States)

    Huang, T. C.; Lee, W. Y.; Lee, V. Y.; Karimi, R.

    1988-08-01

    New superconducting TlCan-1Ba2CunO2n+3 thin films have been analyzed by the X-ray diffraction and four-point probe techniques. The films consist mainly of a single TlCa2Ba2Cu3O9 phase or a mixture of the TlCa2Ba2O9 and TlCaBa2Cu2O7 phases with the c-axis preferentially oriented perpendicular to the film surface. The TlCa2Ba2Cu3O9 film grown on an asymmetrically cut yttrium-stabilized ZrO2 (YSZ) substrate has the highest superconducting transition with on-set Tc near 120 K and zero resistance at 116 K. The TlCa2Ba2Cu3O9 film deposited on a SrTiO3 (100) substrate has a slightly lower transition with zero resistance at 104 K probably because of stacking faults. The film composed of both the TlCa2Ba2Cu3O9 and TlCaBa2Cu2O7 phases and grown on YSZ has a double transition with on-set Tc near 118 K and 107 K, and zero resistance at 102 K.

  8. Carrier-Controlled Ferromagnetism in SrTiO_{3}

    Directory of Open Access Journals (Sweden)

    Pouya Moetakef

    2012-06-01

    Full Text Available Magnetotransport and superconducting properties are investigated for uniformly La-doped SrTiO_{3} films and GdTiO_{3}/SrTiO_{3} heterostructures, respectively. GdTiO_{3}/SrTiO_{3} interfaces exhibit a high-density 2D electron gas on the SrTiO_{3} side of the interface, while, for the SrTiO_{3} films, carriers are provided by the dopant atoms. Both types of samples exhibit ferromagnetism at low temperatures, as evidenced by a hysteresis in the magnetoresistance. For the uniformly doped SrTiO_{3} films, the Curie temperature is found to increase with doping and to coexist with superconductivity for carrier concentrations on the high-density side of the superconducting dome. The Curie temperature of the GdTiO_{3}/SrTiO_{3} heterostructures scales with the thickness of the SrTiO_{3} quantum well. The results are used to construct a stability diagram for the ferromagnetic and superconducting phases of SrTiO_{3}.

  9. Transport limits in defect-engineered LaAlO3/SrTiO3 bilayers

    NARCIS (Netherlands)

    Gunkel, F.; Wicklein, S.; Hoffmann-Eifert, S.; Meuffels, P.; Brinks, Peter; Huijben, Mark; Waser, R.; Dittmann, R.

    2014-01-01

    The electrical properties of the metallic interface in LaAlO3/SrTiO3 (LAO/STO) bilayers are investigated with focus on the role of cationic defects in thin film STO. Systematic growth-control of the STO thin film cation stoichiometry (defect-engineering) yields a relation between cationic defects in

  10. Effects of background oxygen pressure on dielectric and ferroelectric properties of epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrTiO3

    Science.gov (United States)

    Abazari, M.; Akdoǧan, E. K.; Safari, A.

    2008-11-01

    Oxygen partial pressure (PO_2) in pulsed laser deposition significantly influences the composition, microstructure, and electrical properties of epitaxial misfit strain-relieved 450nm ⟨001⟩ oriented epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated SrTiO3. Films deposited at 400mTorr exhibit high remnant and saturated polarization of 7.5 and 16.5μC /cm2, respectively, which is ˜100% increase over the ones grown at 100mTorr. The dielectric constant linearly increases from 220 to 450 with increasing PO2. The observed changes in surface morphology of the films and their properties are shown to be due to the suppression of volatile A-site cation loss.

  11. Effect of manganese doping on remnant polarization and leakage current in (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 epitaxial thin films on SrTiO3

    Science.gov (United States)

    Abazari, M.; Akdoǧan, E. K.; Safari, A.

    2008-05-01

    Single phase, epitaxial, ⟨001⟩ oriented, undoped and 1mol% Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films of 400nm thickness were synthesized on SrRuO3 coated SrTiO3. Such films exhibit well saturated hysteresis loops and have a spontaneous polarization (Ps) of 10μC /cm2, which is a 150% higher over the Ps of the undoped composition. The coercive field of 1mol% Mn doped films is 13kV/cm. Mn-doping results in three orders of magnitude decrease in leakage current above 50kV/cm electric field, which we attribute to the suppression of intrinsic p-type conductivity of undoped films by Mn donors.

  12. Improvement of electron mobility in La:BaSnO3 thin films by insertion of an atomically flat insulating (Sr,Ba)SnO3 buffer layer

    Science.gov (United States)

    Shiogai, Junichi; Nishihara, Kazuki; Sato, Kazuhisa; Tsukazaki, Atsushi

    2016-06-01

    One perovskite oxide, ASnO3 (A = Sr, Ba), is a candidate for use as a transparent conductive oxide with high electron mobility in single crystalline form. However, the electron mobility of films grown on SrTiO3 substrates does not reach the bulk value, probably because of dislocation scattering that originates from the large lattice mismatch. This study investigates the effect of insertion of bilayer BaSnO3 / (Sr,Ba)SnO3 for buffering this large lattice mismatch between La:BaSnO3 and SrTiO3 substrate. The insertion of 200-nm-thick BaSnO3 on (Sr,Ba)SnO3 bilayer buffer structures reduces the number of dislocations and improves surface smoothness of the films after annealing as proved respectively by scanning transmission electron microscopy and atomic force microscopy. A systematic investigation of BaSnO3 buffer layer thickness dependence on Hall mobility of the electron transport in La:BaSnO3 shows that the highest obtained value of mobility is 78 cm2V-1s-1 because of its fewer dislocations. High electron mobility films based on perovskite BaSnO3 can provide a good platform for transparent-conducting-oxide electronic devices and for creation of fascinating perovskite heterostructures.

  13. Improvement of electron mobility in La:BaSnO3 thin films by insertion of an atomically flat insulating (Sr,BaSnO3 buffer layer

    Directory of Open Access Journals (Sweden)

    Junichi Shiogai

    2016-06-01

    Full Text Available One perovskite oxide, ASnO3 (A = Sr, Ba, is a candidate for use as a transparent conductive oxide with high electron mobility in single crystalline form. However, the electron mobility of films grown on SrTiO3 substrates does not reach the bulk value, probably because of dislocation scattering that originates from the large lattice mismatch. This study investigates the effect of insertion of bilayer BaSnO3 / (Sr,BaSnO3 for buffering this large lattice mismatch between La:BaSnO3 and SrTiO3 substrate. The insertion of 200-nm-thick BaSnO3 on (Sr,BaSnO3 bilayer buffer structures reduces the number of dislocations and improves surface smoothness of the films after annealing as proved respectively by scanning transmission electron microscopy and atomic force microscopy. A systematic investigation of BaSnO3 buffer layer thickness dependence on Hall mobility of the electron transport in La:BaSnO3 shows that the highest obtained value of mobility is 78 cm2V−1s−1 because of its fewer dislocations. High electron mobility films based on perovskite BaSnO3 can provide a good platform for transparent-conducting-oxide electronic devices and for creation of fascinating perovskite heterostructures.

  14. Enhancing electron mobility in La-doped BaSnO3 thin films by thermal strain to annihilate extended defects

    Science.gov (United States)

    Yu, Sangbae; Yoon, Daseob; Son, Junwoo

    2016-06-01

    We report the enhancement of room-temperature electron mobility in La-doped BaSnO3 (LBSO) thin films with thermal strain induced by high temperature nitrogen (N2) annealing. Simple annealing under an N2 environment consistently doubled the electron mobility of the LBSO films on the SrTiO3 (STO) substrates to as high as 78 cm2 V-1 s-1 at a carrier concentration of 4.0 × 1020 cm-3. This enhancement is mainly attributed to annihilation of extended defects as a consequence of compressive strain induced by the difference in the thermal expansion coefficients of LBSO and STO. Our study suggests that thermal strain can be exploited to reduce extended defects and to facilitate electron transport in transparent oxide semiconductors.

  15. Gd-Doped BaSnO3 Thin Films: High Mobility in a Magnetically-Doped Transparent Conducting Oxide

    Science.gov (United States)

    Alaan, Urusa; Shafer, Padraic; N'diaye, Alpha; Arenholz, Elke; Suzuki, Yuri

    It has recently been shown that when the perovskite-structure BaSnO3 (BSO) is doped with LaBa', the result is a transparent conducting oxide with room-temperature electron mobilities that are much higher than conventional ternary oxides. The ability to achieve high carrier mobilities in BSO is promising for future perovskite-structure devices. We have used pulsed laser deposition to grow epitaxial thin films of Ba0.96Gd0.04SnO3 (Gd:BSO) and Ba0.96La0.04SnO3 (La:BSO) on (001) SrTiO3 and (001) MgO substrates. At 300 K, Gd:BSO films have ρ ~2 m Ω .cm, μe ~28 cm2/V .s and n ~1.0 × 1020cm-3. At the same temperature, La:BSO films have ρ ~0.4 m Ω .cm, μe ~58 cm2/V .s and n ~2.5 × 1020 cm-3. While La:BSO is diamagnetic, Gd:BSO is paramagnetic with a clear magnetic response that saturates at ~7 μB/Gd3+, and a negative ordinary magnetoresistance at low temperatures. Like La:BSO, Gd:BSO is transparent and colorless in the visible regime. Thus, we have shown that Gd is good dopant for BSO in order to achieve transparency and metallicity that is coincident with a magnetic response. We acknowledge support from the Army Research Office under Grant # W911NF-14-1-0611, the U.S. Department of Energy under Contract No. DE-AC02-05CH11231, and the National Science Foundation Graduate Research Fellowship Program.

  16. Growth, structuring and characterisation of all-oxide thin film devices prepared by pulsed laser deposition

    NARCIS (Netherlands)

    Cillessen, J.F.M.; Wolf, R.M.; Giesbers, J.B.; Blom, P.W.M.; Grosse Holz, K.O.; Pastoor, E.

    The combination of a variety of oxidic thin films in two materials systems is described. The first one focuses on the growth of BaZrO3 on SrTiO3 (both perovskites) and the use of these stacks as a substrate for the growth of magnetic ferrite spinel films. The second system shows the combination of

  17. Metastable honeycomb SrTiO3/SrIrO3 heterostructures

    International Nuclear Information System (INIS)

    Anderson, T. J.; Ryu, S.; Podkaminer, J. P.; Ma, Y.; Eom, C. B.; Zhou, H.; Xie, L.; Irwin, J.; Rzchowski, M. S.; Pan, X. Q.

    2016-01-01

    Recent theory predictions of exotic band topologies in (111) honeycomb perovskite SrIrO 3 layers sandwiched between SrTiO 3 have garnered much attention in the condensed matter physics and materials communities. However, perovskite SrIrO 3 film growth in the (111) direction remains unreported, as efforts to synthesize pure SrIrO 3 on (111) perovskite substrates have yielded films with monoclinic symmetry rather than the perovskite structure required by theory predictions. In this study, we report the synthesis of ultra-thin metastable perovskite SrIrO 3 films capped with SrTiO 3 grown on (111) SrTiO 3 substrates by pulsed laser deposition. The atomic structure of the ultra-thin films was examined with scanning transmission electron microscopy (STEM), which suggests a perovskite layering distinct from the bulk SrIrO 3 monoclinic phase. In-plane 3-fold symmetry for the entire heterostructure was confirmed using synchrotron surface X-ray diffraction to measure symmetry equivalent crystal truncation rods. Our findings demonstrate the ability to stabilize (111) honeycomb perovskite SrIrO 3 , which provides an experimental avenue to probe the phenomena predicted for this material system.

  18. Tuning of dielectric, pyroelectric and ferroelectric properties of 0.715Bi0.5Na0.5TiO3-0.065BaTiO3-0.22SrTiO3 ceramic by internal clamping

    Directory of Open Access Journals (Sweden)

    Satyanarayan Patel

    2015-08-01

    Full Text Available This study systematically investigates the phenomenon of internal clamping in ferroelectric materials through the formation of glass-ceramic composites. Lead-free 0.715Bi0.5Na0.5TiO3−0.065BaTiO3−0.22SrTiO3 (BNT-BT-ST bulk ferroelectric ceramic was selected for the course of investigation. 3BaO − 3TiO2 − B2O3 (BTBO glass was then incorporated systematically to create sintered samples containing 0%, 2%, 4% and 6% glass (by weight. Upon glass induction features like remnant polarization, saturation polarization, hysteresis losses and coercive field could be varied as a function of glass content. Such effects were observed to benefit derived applications like enhanced energy storage density ∼174 kJ/m3 to ∼203 kJ/m3 and pyroelectric coefficient 5.7x10−4 Cm−2K−1 to 6.8x10−4 Cm−2K−1 by incorporation of 4% glass. Additionally, BNT-BT-ST depolarization temperature decreased from 457K to 431K by addition of 4% glass content. Glass incorporation could systematically increases diffuse phase transition and relaxor behavior temperature range from 70 K to 81K and 20K to 34 K, respectively when 6% and 4% glass content is added which indicates addition of glass provides better temperature stability. The most promising feature was observed to be that of dielectric response tuning. It can be also used to control (to an extent the dielectric behavior of the host ceramic. Dielectric permittivity and losses decreased from 1278 to 705 and 0.109 to 0.107 for 6% glass, at room temperature. However this reduction in dielectric constant and loss increases pyroelectric figures of merit (FOMs for high voltage responsivity (Fv high detectivity (Fd and energy harvesting (Fe from 0.018 to 0.037 m2C−1, 5.89 to 8.85 μPa−1/2 and 28.71 to 61.55 Jm−3K−2, respectively for 4% added ceramic-glass at room temperature. Such findings can have huge implications in the field of tailoring ferroelectric response for application specific requirements.

  19. Electric-Field-Induced Soft-Mode Hardening in SrTiO3 Films

    Science.gov (United States)

    Akimov, I. A.; Sirenko, A. A.; Clark, A. M.; Hao, J.-H.; Xi, X. X.

    2000-05-01

    We have studied electric-field-induced Raman scattering in SrTiO3 thin films using an indium-tin-oxide/SrTiO3/SrRuO3 structure grown by pulsed laser deposition. The soft mode polarized along the field becomes Raman active. Experimental data for electric-field-induced hardening of the soft modes and the tuning of the static dielectric constant are in agreement described by the Lyddane-Sachs-Teller formalism. The markedly different behavior of the soft modes in thin films from that in the bulk is explained by the existence of local polar regions.

  20. Vacancy induced magnetism in SrTiO3

    International Nuclear Information System (INIS)

    Zhang Yongjia; Hu Jifan; Cao Ensi; Sun Li; Qin Hongwei

    2012-01-01

    Vacancy-induced magnetism in perovskite SrTiO 3 is investigated by ab initio calculations and magnetic measurements. The calculations of the generalized gradient approximation (GGA), the local density approximation (LDA) and the local density approximation with on-site effect U (LDA+U) methods show that stoichiometric SrTiO 3 is nonmagnetic. The GGA calculated results indicate that Ti or O vacancy could induce magnetism rather than Sr vacancy. The LDA and LDA+U calculations show that the Ti vacancy could induce magnetism, while Sr and O vacancies couldn't. The experimental results confirm that SrTiO 3 nanocrystalline powders exhibit room-temperature ferromagnetism (FM) and the magnetic moment results from cation vacancies. - Highlights: ► The possible ferromagnetism (FM) in perovskite SrTiO 3 is investigated. ► The vacancy could induce the magnetism in perovskite materials. ► Theoretical and experimental results indicated that cation vacancy could induce the FM.

  1. Superconducting epitaxial YBa2Cu3O7−δ on SrTiO3-buffered Si(001)

    Indian Academy of Sciences (India)

    2018-02-05

    Feb 5, 2018 ... Abstract. Thin films of optimally doped(001)-oriented YBa2Cu3O7−δ are epitaxially integrated on silicon(001) through growth on a single ... The single crystal nature of the SrTiO3 buffer enables high quality YBa2Cu3O7−δ films exhibiting high ... material behaviours that can potentially be exploited in future.

  2. Optical, ferroelectric and magnetic properties of multiferroelectric BiFeO3-(K0.5Na0.5)0.4(Sr 0.6Ba0.4)0.8Nb2O6 thin films

    KAUST Repository

    Yao, Yingbang

    2014-02-01

    Multiferroic BiFeO3-(K0.5Na0.5) 0.4(Sr0.6Ba0.4)0.8Nb 2O6 (BFO-KNSBN) trilayer thin films, were epitaxially grown on MgO(0 0 1) and SrTiO3(0 0 1) by using pulsed laser deposition (PLD). Their ferroelectric, magnetic, dielectric and optical properties were investigated. It was found that both ferroelectric polarization and dielectric constant of the films were enhanced by introducing KNSBN as a barrier layer. Meanwhile, ferromagnetism of BFO was maintained. More interestingly, a double hysteresis magnetic loop was observed in the KNSBN-BFO-KNSBN trilayer films, where exchange bias and secondary phase in the BFO layer played crucial roles. Interactions between adjacent layers were revealed by temperature-dependent Raman spectroscopic measurements. © 2013 Elsevier B.V. All rights reserved.

  3. Influence of strain on the electronic structure of the TbMnO3/SrTiO3 epitaxial interface

    NARCIS (Netherlands)

    Venkatesan, S.; Doumlblinger, M.; Daumont, C.; Kooi, B.; Noheda, Beatriz; De Hosson, J. T. M.; Scheu, C.; Döblinger, M.

    2011-01-01

    Understanding the magnetotransport properties of epitaxial strained thin films requires knowledge of the chemistry at the interface. We report on the change in Mn electronic structure at the epitaxially strained TbMnO3/SrTiO3 interface. Scanning transmission electron microscopy shows an abrupt

  4. Physics of SrTiO3-based heterostructures and nanostructures: a review.

    Science.gov (United States)

    Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

    2017-08-30

    1 Overview 1 1.1 Introduction 1 1.1.1 Oxide growth techniques are rooted in search for high-Tc superconductors 2 1.1.2 First reports of interface conductivity 2 1.2 2D physics 2 1.3 Emergent properties of oxide heterostructures and nanostructures 3 1.4 Outline 3 2 Relevant properties of SrTiO3 3 2.1 Structural properties and transitions 3 2.2 Ferroelectricity, Paraelectricity and Quantum Paraelectricity 4 2.3 Electronic structure 5 2.4 Defects 6 2.4.1 Oxygen vacancies 6 2.4.2 Terraces 7 2.5 Superconductivity 7 3 SrTiO3-based heterostructures and nanostructures 8 3.1 Varieties of heterostructures 8 3.1.1 SrTiO3 only 9 3.1.2 LaAlO3/SrTiO3 9 3.1.3 Other heterostructures formed with SrTiO3 10 3.2 Thin-film growth 10 3.2.1 Substrates 10 3.2.2 SrTiO3 surface treatment 11 3.2.3 Pulsed Laser Deposition 11 3.2.4 Atomic Layer Deposition 13 3.2.5 Molecular Beam Epitaxy 14 3.2.6 Sputtering 15 3.3 Device Fabrication 15 3.3.1 "Conventional" photolithography - Thickness Modulation, hard masks, etc. 15 3.3.2 Ion beam irradiation 16 3.3.3 Conductive-AFM lithography 16 4 Properties and phase diagram of LaAlO3/SrTiO3 16 4.1 Insulating state 16 4.2 Conducting state 17 4.2.1 Confinement thickness (the depth profile of the 2DEG) 17 4.3 Metal-insulator transition and critical thickness 18 4.3.1 Polar catastrophe ( electronic reconstruction) 18 4.3.2 Oxygen Vacancies 19 4.3.3 Interdiffusion 20 4.3.4 Polar Interdiffusion + oxygen vacancies + antisite pairs 20 4.3.5 Role of surface adsorbates 21 4.3.6 Hidden FE like distortion - Strain induced instability 21 4.4 Structural properties and transitions 21 4.5 Electronic band structure 22 4.5.1 Theory 22 4.5.2 Experiment 23 4.5.3 Lifshitz transition 24 4.6 Defects, doping, and compensation 25 4.7 Magnetism 25 4.7.1 Experimental evidence 25 4.7.2 Two types of magnetism 27 4.7.3 Ferromagnetism 27 4.7.4 Metamagnetism 28 4.8 Superconductivity 28 4.9 Optical properties 29 4.9.1 Photoluminesce

  5. Effect of fabrication conditions on phase formation and properties of epitaxial (PbMg1/3Nb2/3O3)0.67-(PbTiO3)0.33 thin films on (001) SrTiO3

    NARCIS (Netherlands)

    Boota, M.; Houwman, Evert Pieter; Nguyen, Duc Minh; Lanzara, G.; Rijnders, Augustinus J.H.M.

    2016-01-01

    The pulsed laser deposition process of 300nm thick films of Pb(Mg1/3Nb2/3)O3)0.67-(PbTiO3)0.33 on (001)-oriented SrTiO3 was studied by varying deposition pressure, substrate deposition temperature, laser fluence on the target and target-substrate distance. Perovskite phase pure, (001)-oriented,

  6. Ferroelectric properties of BaTiO3/PbZr0.2Ti.08O3 bilayer thin film

    Science.gov (United States)

    Salev, Pavel; Yang, Chun; Grigoriev, Alexei

    2014-03-01

    The thin film ferroelectric BaTiO3/PbZr0.2Ti0.8O3 bilayer was epitaxially grown on SrRuO3/SrTiO3 substrate by RF sputtering. Electrical measurements of polarization switching revealed two different switching regimes - a small ferroelectric hysteresis loop at low applied voltage and a larger loop at a high voltage. The measured dielectric permittivity corresponds to weak electrostatic coupling between two layers according to Landau-Ginsburg-Devonshire theory. This weak coupling may allow for independent polarization states to exist in individual layers. This can lead to stable head-to-head and tail-to-tail polarization domain configurations, which would explain the two switching regimes observed in electrical measurements. The compensation of polarization gradient across the interface can be explained by the enhancement of interface charge carrier density due to strong bending of electron energy bands. This work was supported by NSF award DMR-1057159.

  7. Structural and dielectric properties of (001) and (111)-oriented BaZr0.2Ti0.8O3 epitaxial thin films

    International Nuclear Information System (INIS)

    Ventura, J.; Fina, I.; Ferrater, C.; Langenberg, E.; Coy, L.E.; Polo, M.C.; Garcia-Cuenca, M.V.; Fabrega, L.; Varela, M.

    2010-01-01

    We have grown and characterized BaZr 0.2 Ti 0.8 O 3 (BZT) epitaxial thin films deposited on (001) and (111)-oriented SrRuO 3 -buffered SrTiO 3 substrates by pulsed laser deposition. Structural and morphological characterizations were performed using X-ray diffractometry and atomic force microscopy, respectively. A cube-on-cube epitaxial relationship was ascertained from the θ-2θ and φ diffractograms in both (001) and (111)-oriented films. The (001)-oriented films showed a smooth granular morphology, whereas the faceted pyramid-like crystallites of the (111)-oriented films led to a rough surface. The dielectric response of BZT at room temperature was measured along the growth direction. The films were found to be ferroelectric, although a well-saturated hysteresis loop was obtained only for the (001)-oriented films. High leakage currents were observed for the (111) orientation, likely associated to charge transport along the boundaries of its crystallites. The remanent polarization, coercive field, dielectric constant, and relative change of dielectric permittivity (tunability) of (111)-oriented BZT were higher than those of (001)-oriented BZT.

  8. Microstructural properties of BaTiO3 ceramics and thin films

    International Nuclear Information System (INIS)

    Fundora C, A.; Portelles, J.J.; Siqueiros, J.M.

    2000-01-01

    A microstructural study of BaTiO 3 ceramics obtained by the conventional ceramic method is presented. Targets were produced to grow BaTiO 3 thin films by pulsed laser deposition on Pt/Ti/Si (100) substrates. X-ray diffraction, Auger Electron Spectroscopy, X-ray Photon Spectroscopy and Scanning Electron Microscopy were used to study the properties of the BaTiO 3 ceramic samples and thin films, as deposited and after an annealing process. (Author)

  9. Anomalous thermodynamic properties of the electron accumulation layer in SrTiO3

    Science.gov (United States)

    Sammon, Michael; Fu, Han; Shklovskii, B. I.

    2017-10-01

    Due to the nonlinear dielectric response within SrTiO3 (STO), an accumulation layer created by positive charges at the surface of the STO sample (x =0 ) has an electron density profile n (x ) that slowly decays as 1 /x12 /7 . Here we show that the long tail of n (x ) causes the magnetization and the specific heat of the accumulation layer to diverge at large x . We explore the truncation of the tail by the finite sample width W , the transition from the nonlinear to linear dielectric response with dielectric constant κ , and the use of a back gate with a negative voltage -|V | . We find that both the magnetization and specific heat are anomalously large and obey nontrivial power law dependences on W , κ , or |V |. We conclude with a discussion of how the capacitance as a function of the back gate voltage may be used to study the shape of the n (x ) tail in thin samples.

  10. Growing LaAlO3/SrTiO3 interfaces by sputter deposition

    Directory of Open Access Journals (Sweden)

    I. M. Dildar

    2015-06-01

    Full Text Available Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO3 on SrTiO3 substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter window exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting.

  11. Topological states at the (001) surface of SrTiO3

    Science.gov (United States)

    Vivek, Manali; Goerbig, Mark O.; Gabay, Marc

    2017-04-01

    Defect-free SrTiO3 (STO) is a band insulator but angle resolved photoemission spectroscopy (ARPES) experiments have demonstrated the existence of a nanometer thin two-dimensional electron liquid (2DEG) at the (001) oriented surface of this compound. The bulk is a trivial insulator, but our theoretical study reveals that the parity of electronic wave functions in this 2DEG is inverted in the vicinity of special points in reciprocal space where the low-energy dispersion consists of four gapped Dirac cones with a tilted and anisotropic shape. This gives rise to linearly dispersing topological edge states at the one-dimensional boundary. We propose to probe these modes by measuring the Josephson radiation from gapless bound Andreev states in STO based junctions, as it is predicted that they display distinctive signatures of topology.

  12. LCAO calculations of SrTiO3 nanotubes

    Science.gov (United States)

    Evarestov, Robert; Bandura, Andrei

    2011-06-01

    The large-scale first-principles simulation of the structure and stability of SrTiO3 nanotubes is performed for the first time using the periodic PBE0 LCAO method. The initial structures of the nanotubes have been obtained by the rolling up of the stoichiometric SrTiO3 slabs consisting of two or four alternating (001) SrO and TiO2 atomic planes. Nanotubes (NTs) with chiralities (n,0) and (n,n) have been studied. Two different NTs were constructed for each chirality: (I) with SrO outer shell, and (II) with TiO2 outer shell. Positions of all atoms have been optimized to obtain the most stable NT structure . In the majority of considered cases the inner or outer TiO2 shells of NT undergo a considerable reconstruction due to shrinkage or stretching of interatomic distances in the initial cubic perovskite structure. There were found two types of surface reconstruction: (1) breaking of Ti-O bonds with creating of Ti = O titanyl groups in outer surface; (2) inner surface folding due to Ti-O-Ti bending. Based on strain energy calculations the largest stability was found for (n,0) NTs with TiO2 outer shell.

  13. Conductivity of SrTiO3 based oxides in the reducing atmosphere at high temperature

    DEFF Research Database (Denmark)

    Hashimoto, Shin-Ichi; Poulsen, Finn Willy; Mogensen, Mogens Bjerg

    2007-01-01

    The conductivities of several donor-doped SrTiO3 based oxides, which were prepared in air, were studied in a reducing atmosphere at high temperature. The conductivities of all specimens increased slowly with time at 1000 degrees C in 9% H-2/N-2, even after 100 h. Nb-doped SrTiO3 showed relatively...... at 500-800 degrees C, while that of La-doped SrTiO3 dropped immediately on exposure to air. The conduction behavior of Nb-doped SrTiO3 was explained by reduction of Ti4+ and/or Nb5+ and the relatively slow oxygen diffusibility. (c) 2006 Elsevier B.V. All rights reserved.......The conductivities of several donor-doped SrTiO3 based oxides, which were prepared in air, were studied in a reducing atmosphere at high temperature. The conductivities of all specimens increased slowly with time at 1000 degrees C in 9% H-2/N-2, even after 100 h. Nb-doped SrTiO3 showed relatively...... fast reduction and high conductivity compared with the other SrTiO3 based oxides. The conductivity of Nb-doped SrTiO3 was ca. 50 S cm(-1) at 500 degrees C after reduction at 1200 degrees C. After strong reduction, the conductivity of Nb-doped SrTiO3 was almost independent of the oxygen partial pressure...

  14. THINNING OF ‘GALA’ AND 'GOLDEN DELICIOUS' APPLES WITH BA, NAA AND THEIR COMBINATIONS

    Directory of Open Access Journals (Sweden)

    M STOPAR

    2002-07-01

    Full Text Available Apple trees, eight-year-old ‘Gala’/M.9 and four-year-old ‘Golden Delicious’/M.9 have been thinned with 6- benzyladenine (BA 50 ppm, 100 ppm and 200 ppm, with 1-naphthaleneacetic acid (NAA 5 ppm, 10 ppm and 20 ppm, and with the tank mix combinations of BA 50 ppm + NAA 5 ppm or BA 20 ppm + NAA 5 ppm, all at 9-10 mm fruitlet diameter. All applied concentrations of BA and NAA thinned both cultivars significantly and no significant difference was found between BA or NAA thinning action. No concentration response on thinning was observed with neither BA nor NAA application. All BA or NAA separate treatments caused yield of fruit to shift to bigger size class. The only concentration response effect was found on evaluation of mean fruit weight data on ‘Golden Delicious’. The higher concentration of BA was used, the higher was the weight of ‘Golden Delicious’ fruit. On the opposite, the higher concentration of NAA was used, the lower was the weight of ‘Golden Delicious’ fruit (not significantly. When BA and NAA were sprayed on ‘Gala’ or ‘Golden Delicious’ as a tank mix combination, similar effect on thinning or fruit growth occurred comparing to BA or NAA when sprayed alone. Return bloom was enhanced on all thinned ‘Gala’ trees while flower formation of ‘Golden Delicious’ was better in the case of BA 200 ppm, NAA 5 ppm, NAA 20 ppm or tank mix spraying of BA 20 ppm + NAA 5 ppm.

  15. The effect of oxygen pressure on structure, electrical conductivity and oxygen permeability of Ba0.5Sr0.5Co0.8Fe0.2O3-δ thin films by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    S Daneshmandi

    2013-09-01

    Full Text Available  In this paper, Ba0.5Sr0.5Co0.8Fe0.2O3-δ (BSCF thin films were deposited on single crystal SrTiO3 (STO (100 by pulsed laser deposition (PLD technique at different pressures of oxygen. Crystal structure of bulk and thin film samples was studied by x-ray diffraction (XRD. The XRD results indicate that both bulk and thin film samples have cubic structures. AFM micrographs showed an increase in RMS roughness by oxygen pressure. The electrical resistance was measured at room temperature up to 600 and 800 °C in air using four probe method for bulk and thin films, respectively. A sharp drop in resistance was observed by increasing temperature up to 400 °C, that was explained with the small polaron hopping model. Polaron activation energy was calculated by Arrhenius relation. It was decreased over increasing oxygen pressure. The surface exchange coefficient (Kchem of the 300 mTorr sample was measured by electrical conductivity relaxation (ECR technique. The results suggested a linear relationship between Kchem and reciprocal of absolute temperature.

  16. Ultrathin BaTiO3 templates for multiferroic nanostructures

    OpenAIRE

    Chen, Xumin; Yang, Seolun; Kim, Ji-Hyun; Kim, Hyung-Do; Kim, Jae-Sung; Rojas, Geoffrey; Skomski, Ralph; Lu, Haidong; Bhattacharya, Anand; Santos, Tiffany; Guisinger, Nathan; Bode, Matthias; Gruverman, Alexei; Enders, Axel

    2011-01-01

    Structural, electronic and dielectric properties of high-quality ultrathin BaTiO3 films are investigated. The films, which are grown by ozone-assisted molecular beam epitaxy on Nb-doped SrTiO3 (001) substrates and having thicknesses as thin 8 unit cells (3.2 nm), are unreconstructed and atomically smooth with large crystalline terraces. A strain-driven transition to 3D island formation is observed for films of of 13 unit cells thickness (5.2 nm). The high structural quality of the surfaces, t...

  17. Fracture force analysis at the interface of Pd and SrTiO3

    International Nuclear Information System (INIS)

    Nazarpour, S.; Zamani, C.; Cirera, A.

    2009-01-01

    The objective of this work is to develop an experimental indentation based method to determine the fracture force at the interface of Pd thin films and SrTiO 3 perovskite substrate. This paper reports on the results obtained for indentation into Pd thin films which were deposited in various thicknesses from 20 nm to 200 nm under vacuum and 300 deg. C substrate temperature by an electron beam physical vapor deposition. Initially, the relation between grain size, elastic module and hardness was considered as a function of film thickness. Thereafter, in developing new method, oscillating indentation was performed with different applied forces and oscillating times in order to measure the critical fracture force in each thickness. The effect of oscillating time on plastically deformed regions surrounding an indentation was schematically explained in conjunction with variation of oscillating time to determine the interfacial properties of the Pd thin film. Furthermore, the accuracy of the critical fracture force was ensured by applied force versus piling up height plot. The method is validated experimentally for the soft thin films over the hard substrate. However, further study would be essential to measure the film adhesion by means of fracture force at the interface

  18. Linear thermal expansion of SrTiO3

    International Nuclear Information System (INIS)

    Tsunekawa, S.; Watanabe, H.F.J.; Takei, H.

    1984-01-01

    The linear thermal expansion of SrTiO 3 in the temperature range 10 to 150 K is measured with a relative accuracy of 5 x 10 -7 by using a three-terminal capacitance dilatometer. The dilation ΔL/L of a single-domain crystal is converted to the ratio of the pseudo-cubic cell constants a(T)/a(T/sub a/) by the equation a(T)/a(T/sub a/) = [1 + (ΔL/L)/sub T/]/[1 + (ΔL/L)/sub T//sub a/], where L is the specimen length, T/sub a/ is the cubic-to-tetragonal transition temperature and T 6 octahedra around the [001] axis. The temperature at which the dilation shows a minimum, 37.5 K, is very close to the transition point T/sub c/ = (32 +- 5) K predicted by Cowley. (author)

  19. High mobility La-doped BaSnO3 on non-perovskite MgO substrate

    Science.gov (United States)

    Kim, Youjung; Shin, Juyeon; Kim, Young Mo; Char, Kookrin

    (Ba,La)SnO3 is a transparent perovskite oxide with high electron mobility and excellent oxygen stability. Field effect device with (Ba,La)SnO3 channel was reported to show good output characteristics on STO substrate. Here, we fabricated (Ba,La)SnO3\\ films and field effect devices with (Ba,La)SnO3 channel on non-perovskite MgO substrates, which are available in large size wafers. X-ray diffraction and transmission electron microscope (TEM) images of (Ba,La)SnO3\\ films on MgO substrates show that the films are epitaxial with many threading dislocations. (Ba,La)SnO3 exhibits the high mobility with 97.2 cm2/Vs at 2 % La doping on top of 150 nm thick BaSnO3 buffer layer. Excellent carrier modulation was observed in field effect devices. FET performances on MgO substrates are slightly better than those on SrTiO3 substrates in spite of the higher dislocation density on MgO than on SrTiO3 substrates. These high mobility BaSnO3 thin films and transistors on MgO substrates will accelerate development for applications in high temperature and high power electronics. Samsung Science and Technology Foundation.

  20. Promoting Photocatalytic Overall Water Splitting by Controlled Magnesium Incorporation in SrTiO3 Photocatalysts

    NARCIS (Netherlands)

    Han, Kai; Lin, Yen Chun; Yang, Chia Min; Jong, Ronald; Mul, Guido; Mei, Bastian

    2017-01-01

    SrTiO3 is a well-known photocatalyst inducing overall water splitting when exposed to UV irradiation of wavelengths <370 nm. However, the apparent quantum efficiency of SrTiO3 is typically low, even when functionalized with nanoparticles of Pt or Ni@NiO. Here, we introduce a simple solid-state

  1. Photocatalytic reduction synthesis of SrTiO3-graphene nanocomposites and their enhanced photocatalytic activity.

    Science.gov (United States)

    Xian, Tao; Yang, Hua; Di, Lijing; Ma, Jinyuan; Zhang, Haimin; Dai, Jianfeng

    2014-01-01

    SrTiO3-graphene nanocomposites were prepared via photocatalytic reduction of graphene oxide by UV light-irradiated SrTiO3 nanoparticles. Fourier transformed infrared spectroscopy analysis indicates that graphene oxide is reduced into graphene. Transmission electron microscope observation shows that SrTiO3 nanoparticles are well assembled onto graphene sheets. The photocatalytic activity of as-prepared SrTiO3-graphene composites was evaluated by the degradation of acid orange 7 (AO7) under a 254-nm UV irradiation, revealing that the composites exhibit significantly enhanced photocatalytic activity compared to the bare SrTiO3 nanoparticles. This can be explained by the fact that photogenerated electrons are captured by graphene, leading to an increased separation and availability of electrons and holes for the photocatalytic reaction. Hydroxyl (·OH) radicals were detected by the photoluminescence technique using terephthalic acid as a probe molecule and were found to be produced over the irradiated SrTiO3 nanoparticles and SrTiO3-graphene composites; especially, an enhanced yield is observed for the latter. The influence of ethanol, KI, and N2 on the photocatalytic efficiency was also investigated. Based on the experimental results, ·OH, h(+), and H2O2 are suggested to be the main active species in the photocatalytic degradation of AO7 by SrTiO3-graphene composites. 61.46. + w; 78.67.Bf; 78.66.Sq.

  2. Resistance switching at the interface of LaAlO3/SrTiO3

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Zhao, J.L.; Sun, J.R.

    2010-01-01

    behavior is suggested to be an intrinsic feature of the SrTiO3 single crystal substrates, which mainly originates from the modulation of oxygen ion transfer in SrTiO3 surface by external electric field in the vicinity of interface, whereas the LaAlO3 film acts as a barrier layer. © 2010 American Institute...

  3. Epitaxial growth and thermodynamic stability of SrIrO3/SrTiO3 heterostructures

    Science.gov (United States)

    Groenendijk, D. J.; Manca, N.; Mattoni, G.; Kootstra, L.; Gariglio, S.; Huang, Y.; van Heumen, E.; Caviglia, A. D.

    2016-07-01

    Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO3 thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modification of the SrIrO3 target surface. We further demonstrate that bare SrIrO3 thin films are subject to degradation in air and are highly sensitive to lithographic processing. A crystalline SrTiO3 cap layer deposited in-situ is effective in preserving the film quality, allowing us to measure metallic transport behavior in films with thicknesses down to 4 unit cells. In addition, the SrTiO3 encapsulation enables the fabrication of devices such as Hall bars without altering the film properties, allowing precise (magneto)transport measurements on micro- and nanoscale devices.

  4. C-axis oriented Ba-ferrite thin film with small grain for perpendicular magnetic recording

    International Nuclear Information System (INIS)

    Morisako, A.; Shams, N.N.; Miura, Y.; Matsumoto, M.; Gee, S.H.; Park, M.H.; Hong, Y.K.

    2004-01-01

    Hexagonal Ba-ferrite(BaM) thin films with amorphous AlO(a-AlO) under-layer were prepared by a facing targets sputtering system. The grain size of c-axis perpendicularly oriented BaM/a-AlO films is about 20 nm at the thickness of 20 nm for BaM layer. The perpendicular coercivity is about 3.5-4.3 kOe with BaM layer thickness in the range from 80 to 30 nm and 2.3 kOe for BaM layer thickness of 20 nm.The in-plane coercivity for BaM/a-AlO films was less than 0.1 kOe at the thickness ranging from 20 to 80 nm

  5. Microstructural properties of BaTiO{sub 3} ceramics and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Fundora C, A.; Portelles, J.J.; Siqueiros, J.M. [Posgrado en Fisica de Materiales, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Apartado Postal 2861, 22800 Ensenada, Baja California (Mexico)

    2000-07-01

    A microstructural study of BaTiO{sub 3} ceramics obtained by the conventional ceramic method is presented. Targets were produced to grow BaTiO{sub 3} thin films by pulsed laser deposition on Pt/Ti/Si (100) substrates. X-ray diffraction, Auger Electron Spectroscopy, X-ray Photon Spectroscopy and Scanning Electron Microscopy were used to study the properties of the BaTiO{sub 3} ceramic samples and thin films, as deposited and after an annealing process. (Author)

  6. Magneto-transport properties of La 0.7 Ca 0.3 MnO 3/SrTiO 3/La 0.7 ...

    Indian Academy of Sciences (India)

    transport properties of La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3 tunnel junction. P Raychaudhuri C Mitra K Dorr K H Muller G Kobernik R Pinto. Thin file & devices Volume 58 Issue 5-6 May-June 2002 pp 1179-1182 ...

  7. Interfacial structure of multi-layered thin-films produced by pulsed laser deposition for use in small-scale ceramic capacitors

    International Nuclear Information System (INIS)

    Araki, Takao; Hino, Takanori; Ohara, Masahiro

    2014-01-01

    The aim of this study was to develop thin film capacitors with superior properties that could provide an alternative to materials currently used in conventional multi-layer ceramic capacitors fabricated by sintering. To this end, an artificial dielectric super lattice technique, incorporating pulsed laser deposition, was applied to improving the dielectric properties of thin film capacitors. This method permits the A-site atoms of a perovskite ABO 3 structure to be selected layer by layer at a nanoscopic scale; consequently, multi-layer BaTiO 3 - SrTiO 3 thin films were produced on Pt(111)/Ti/SiO 2 /Si(100) and SrTiO 3 (111) substrates. Hetero-epitaxial grain growth was observed between BaTiO 3 and SrTiO 3 , with the lattice mismatch between them introducing a compressive residual strain at the interface. The dielectric properties of these multi-layer thin-film capacitors were found to be superior to those of conventional solid-solution thin films once the thickness of the layers and the ratio of the two oxides were optimized

  8. Resistance switching of the interfacial conductance in amorphous SrTiO3 heterostructures

    DEFF Research Database (Denmark)

    Christensen, Dennis; Trier, Felix; Chen, Yunzhong

    Complex oxides have attracted a lot of interest recently as this class of material exhibits a plethora of remarkable properties. In particular, a great variety of properties is observed in the heterostructure composed of lanthanum aluminate (LaAlO3) and strontium titanate (SrTiO3). For instance...... by an electric field. It has previously been demonstrated that SrTiO3 heterostructures with amorphous LaAlO3 top layers can display interfacial conductivity with similar critical thickness dependence. Here, we report resistance switching of the interfacial conductance for SrTiO3 heterostructures with amorphous...

  9. Sorption of U(VI) in surfaces of SrTiO3

    International Nuclear Information System (INIS)

    Ortiz O, H.B.; Ordonez R, E.; Fernandez V, S.M.

    2004-01-01

    In this work is presented the physico chemical characterization and evaluation of those surface properties and of sorption of U on the SrTiO 3 like possible candidate for contention barrier in the deep geological confinement. The made studies showed that the SrTiO 3 presents maximum levels of sorption of positive nature species (mainly UO 2 2+ and UO 2 NO 3 + ). (Author)

  10. Electron gas induced in SrTiO3

    Science.gov (United States)

    Fu, Han; Reich, K. V.; Shklovskii, B. I.

    2016-03-01

    This mini-review is dedicated to the 85th birthday of Prof. L.V. Keldysh, from whom we have learned so much. In this paper, we study the potential and electron density depth profiles in surface accumulation layers in crystals with a large and nonlinear dielectric response such as SrTiO3 (STO) in the cases of planar, spherical, and cylindrical geometries. The electron gas can be created by applying an induction D 0 to the STO surface. We describe the lattice dielectric response of STO using the Landau-Ginzburg free energy expansion and employ the Thomas-Fermi (TF) approximation for the electron gas. For the planar geometry, we arrive at the electron density profile n( x) ∝ ( x + d)-12/7, where d ∝ D 0 -12/7 . We extend our results to overlapping electron gases in GTO/STO/GTO heterojunctions and electron gases created by spill-out from NSTO (heavily n-type doped STO) layers into STO. Generalization of our approach to a spherical donor cluster creating a big TF atom with electrons in STO brings us to the problem of supercharged nuclei. It is known that for an atom with a nuclear charge Ze where Z > 170, electrons collapse onto the nucleus, resulting in a net charge Zn < Z. Here, instead of relativistic physics, the collapse is caused by the nonlinear dielectric response. Electrons collapse into the charged spherical donor cluster with radius R when its total charge number Z exceeds the critical value Z c ≈ R/ a, where a is the lattice constant. The net charge e Z n grows with Z until Z exceeds Z* ≈ ( R/ a)9/7. After this point, the charge number of the compact core Z n remains ≈ Z*, with the rest Z* electrons forming a sparse TF atom with it. We extend our studies of collapse to the case of long cylindrical clusters as well.

  11. Imaging and tuning polarity at SrTiO3 domain walls

    Science.gov (United States)

    Frenkel, Yiftach; Haham, Noam; Shperber, Yishai; Bell, Christopher; Xie, Yanwu; Chen, Zhuoyu; Hikita, Yasuyuki; Hwang, Harold Y.; Salje, Ekhard K. H.; Kalisky, Beena

    2017-12-01

    Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO3/SrTiO3 interface 2DEG at the nanoscale. In particular, SrTiO3 domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO3 twin boundary and detect a change in LaAlO3/SrTiO3 interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO3 domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO3-based devices on the nanoscale.

  12. Photoluminescence properties of BaMoO4 amorphous thin films

    International Nuclear Information System (INIS)

    Marques, Ana Paula Azevedo; Melo, Dulce M.A. de; Longo, Elson; Paskocimas, Carlos A.; Pizani, Paulo S.; Leite, Edson R.

    2005-01-01

    BaMoO 4 amorphous and crystalline thin films were prepared from polymeric precursors. The BaMoO 4 was deposited onto Si wafers by means of the spinning technique. The structure and optical properties of the resulting films were characterized by FTIR reflectance spectra, X-ray diffraction (XRD), atomic force microscopy (AFM) and optical reflectance. The bond Mo-O present in BaMoO 4 was confirmed by FTIR reflectance spectra. XRD characterization showed that thin films heat-treated at 600 and 200 deg. C presented the scheelite-type crystalline phase and amorphous, respectively. AFM analyses showed a considerable variation in surface morphology by comparing samples heat-treated at 200 and 600 deg. C. The reflectivity spectra showed two bands, positioned at 3.38 and 4.37 eV that were attributed to the excitonic state of Ba 2+ and electronic transitions within MoO 2- 4 , respectively. The optical band gaps of BaMoO 4 were 3.38 and 2.19 eV, for crystalline (600 deg. C/2 h) and amorphous (200 deg. C/8 h) films, respectively. The room-temperature luminescence spectra revealed an intense single-emission band in the visible region. The PL intensity of these materials was increased upon heat-treatment. The excellent optical properties observed for BaMoO 4 amorphous thin films suggested that this material is a highly promising candidate for photoluminescent applications

  13. 130-K Superconductivity in the Hg-Ba-Ca-Cu-O System

    Science.gov (United States)

    Salem, A.; Gamal, G. A.; Jakob, G.; Adrian, H.

    2006-09-01

    (Hg0.9Re0.1)Ba2Ca2Cu3 O8+δ(HgRe-1223) HTSC thin films have been prepared by pulsed laser deposition (PLD) of a precursor on (100)-oriented SrTiO3 substrates followed by annealing in a controlled mercury atmosphere. The critical temperature is 129 K determined by the temperature dependence of AC susceptibility. Resistance measurements show a superconducting transition at Tc= 130 K with transition width ΔTc ≈ 3 K.

  14. Effect of fabrication conditions on phase formation and properties of epitaxial (PbMg1/3Nb2/3O30.67-(PbTiO30.33 thin films on (001 SrTiO3

    Directory of Open Access Journals (Sweden)

    Muhammad Boota

    2016-05-01

    Full Text Available The pulsed laser deposition process of 300nm thick films of Pb(Mg1/3Nb2/3O30.67-(PbTiO30.33 on (001-oriented SrTiO3 was studied by varying deposition pressure, substrate deposition temperature, laser fluence on the target and target-substrate distance. Perovskite phase pure, (001-oriented, epitaxial smooth films were obtained in a narrow range of deposition parameters. The ferroelectric and dielectric properties of films fabricated within this parameter range still vary significantly. This shows the sensitivity of the system for growth conditions. The best film has a polarization value close to that expected for a (001 poled, stress free single crystal film. All films show deposition conditions dependent variations in the self-bias field. The self-bias is very stable during long cycling for films made at optimum deposition conditions. The piezoelectric coefficients of the films are strongly reduced with respect to bulk single crystal values due to the film clamping. The properties variations are ascribed to changes in the grain boundary properties in which film defects are expected to accumulate. Notably slight off-stoichiometry may cause localized screening charges, affecting specifically the polarization and dielectric constant.

  15. Flux pinning properties of ErBa2Cu3Oy thin films with BaZrO3 nanorods

    International Nuclear Information System (INIS)

    Haruta, M; Fujiyoshi, T; Sueyoshi, T; Dezaki, K; Ichigosaki, D; Miyahara, K; Miyagawa, R; Mukaida, M; Matsumoto, K; Yoshida, Y; Ichinose, A; Horii, S

    2006-01-01

    ErBa 2 Cu 3 O y (ErBCO) thin films with BaZrO 3 (BZO) nanorods were prepared by a PLD method for an enhancement of the critical current density J c . The values of J c for the ErBCO thin film containing 1.5 wt% BZO (Er15) in magnetic fields are higher than those for the ErBCO thin film containing 0.5 wt% BZO (Er05). The peaks of J c have been observed in the angular dependence of J c in both the films when the magnetic field is applied parallel to the c-axis. It has been found that the peak is attributed to the flux pinning by BZO nanorods oriented parallel to the c-axis. The vortex glass-liquid transition temperature T g and the pinning parameter m were derived by fitting observed electric transport properties to the theoretical expression based on the percolation transition model. The value of T g of Er15 is higher than that of Er05. This result indicates that the vortex glass phase extends to a higher temperature region on increasing the fraction of BZO. The peak of m has been found in the magnetic field dependence. This fact is probably due to matching the density of BZO nanorods with that of fluxoids, which was confirmed by TEM observations

  16. Microstructures and properties of superconducting Y-ErBaCuO thin films obtained from disordered Y-ErBaF2Cu films

    Science.gov (United States)

    Cikmach, P.; Diociaiuti, M.; Fontana, A.; Giovannella, C.; Iannuzzi, M.; Lucchini, C.; Merlo, V.; Messi, R.; Paoluzi, L.; Scopa, L.

    1991-01-01

    The preparation procedure used to obtain superconducting thin films by radio frequency magnetron sputtering of a single mosaic target is described in detail. The single mosaic target is composed of (Y-Er), BaF2, and Cu.

  17. Microstructures and properties of superconducting Y-Er-BaCu-O thin films obtained from disordered Y-Er-BaF2-Cu films

    Science.gov (United States)

    Cikmach, P.; Diociaiuti, M.; Fontana, A.; Giovannella, C.; Iannuzzi, M.; Lucchini, C.; Messi, R.; Paoluzi, L.; Scopa, L.; Tripodi, P.

    1990-01-01

    Since the first reports on superconducting thin films obtained by evaporating BaF2, Cu and Y(sup 1), or Yb or Er(sup 2), several others have followed. All these reports describe thin films prepared by means of molecular beam cells or electron guns. Researchers show that films with similar properties can be obtained by radio frequency sputtering of a single mosaic target composed by Y-Er, BaF2 and Cu. Process steps are described.

  18. Resistive switching phenomena of extended defects in Nb-doped SrTiO3 under influence of external gradients

    International Nuclear Information System (INIS)

    Rodenbuecher, Christian

    2014-01-01

    Redox-based memristive materials have attracted much attention in the last decade owing to their ability to change the resistance upon application of an electric field making them promising candidates for future non-volatile memories. However, a fundamental understanding of the nature of the resistive switching effect, which is indispensable for designing future technological applications,is still lacking. As a prototype material of a memristive oxide, strontium titanate (SrTiO 3 ) has been investigated intensively and it was revealed that the valence change of a Ti ''d'' electron plays an important role during resistive switching related to insulator-to-metal transition. Such a transition can be induced by electrical gradients, by chemical gradients, by a combination of these gradients or by donor doping. Hence, SrTiO 3 doped with the donor Nb should have metallic properties and is used commonly as a conducting substrate for the growth of functional oxide thin films. Nevertheless,the resistive switching effect has also be observed in Nb-doped SrTiO 3 . This paradoxical situation offers a unique opportunity to gain an insight into the processes during the insulator-to metal transition. In this thesis, a comprehensive study of the influence of external gradients on SrTiO 3 :Nb single crystals is presented. The focus is especially set on the investigation of the crystallographic structure, the chemical composition, the electronic structure, the lattice dynamics and the electronic transport phenomena using surface-sensitive methods on the macro- and nanoscale. On the as-received epi-polished single crystals, the evolution of a surface layer having a slight excess of strontium and - in contrast to the bulk of the material - semiconducting properties are observed. Hence, the key for understanding of the resistive switching effect is the knowledge of the nature of the surface layer. On the basis of systematic studies of the influence of external

  19. Electrical properties of Y-Ba-Na-Cu-O high Tc superconductors thin films

    Energy Technology Data Exchange (ETDEWEB)

    Verdyan, A. (Center for Theoretical Education Holon (Israel) Raymond and Beverly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel-Aviv Univ. (Israel)); Lapsker, I. (Center for Theoretical Education Holon (Israel) Raymond and Beverly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel-Aviv Univ. (Israel)); Azoulay, J. (Center for Theoretical Education Holon (Israel) Raymond and Beverly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel-Aviv Univ. (Israel))

    1993-04-20

    Y-Ba-Na-Cu-O high Tc superconductors thin films deposited on MgO substrate by resistive evaporation technique were found to have improved electrical properties as compared to pure Y-Ba-Cu-O thin films similarly prepared. A simple conventional inexpensive vacuum system housing a single resistively tungsten heated source was used for the deposition. Pulverized mixture of Y, BaF[sub 2], NaF and Cu in the appropriate atomic proportion was evaporated onto the substrates whose temperature was held constant at 400 C during the evaporation. In situ heat treatment has been carried out at 700 C under oxygen partial pressure of 7 pa. The films thus obtained were found to have the normal superconductors orthorhombic phase at room temperature without any further ex situ heat treatment. The films were characterized and analyzed by X-ray diffraction auger election spectroscopy and four point dc electrical measurements. (orig.)

  20. Stability of Tl-Ba-Ca-Cu-O superconducting thin films

    International Nuclear Information System (INIS)

    Siegal, M. P.; Overmyer, D. L.; Venturini, E. L.; Padilla, R. R.; Provencio, P. N.

    1999-01-01

    We report the stability of TlBa 2 CaCu 2 O 7 and Tl 2 Ba 2 CaCu 2 O 8 on LaAlO 3 (100) epitaxial thin films, under a variety of conditions. All films are stable in acetone and methanol and with repeated thermal cycling to cryogenic temperatures. Moisture, especially vapor, degrades film quality rapidly. These materials are stable to high temperatures in either N 2 or O 2 ambients. While total degradation, resulting from Tl depletion, occurs at the same temperatures for both phases, 600 degree sign C in N 2 and 700 degree sign C in O 2 , the onset of degradation occurs at somewhat lower temperatures for TlBa 2 CaCu 2 O 7 than for Tl 2 Ba 2 CaCu 2 O 8 . (c) 1999 Materials Research Society

  1. High mobility of the strongly confined hole gas in AgTaO3/SrTiO3

    KAUST Repository

    Nazir, Safdar

    2012-05-18

    A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.

  2. Anisotropic electrical properties of epitaxial Yba2Cu3O7-gd films on (110) SrTiO3

    International Nuclear Information System (INIS)

    Gupta, A.; Koren, G.; Baseman, R.J.; Segmuller, A.; Holber, W.

    1989-01-01

    Epitaxial thin films of YBa 2 Cu 3 O 7 - δ were deposited on (110) SrTiO 3 at 600 degrees C in the presence of atomic oxygen using the laser ablation technique. X-ray diffraction patterns in the standard Bragg and grazing incidence modes show epitaxial growth of the films with their c-axis and axis parallel to the and directions in the plane of the substrate, respectively. Superconductivity with T c (R = ) = 82 K was found along the direction in the basal plane, whereas finite resistivity down to 5 k was observed along the c-axis direction. The authors maintain that these preliminary results suggest that YBa 2 Cu 3 O 7 - δ behaves like a true two-dimensional superconductor

  3. Nanoscale leakage current measurements in metal organic chemical vapor deposition crystalline SrTiO3 films

    International Nuclear Information System (INIS)

    Rozier, Y.; Gautier, B.; Hyvert, G.; Descamps, A.; Plossu, C.; Dubourdieu, C.; Ducroquet, F.

    2009-01-01

    The properties of SrTiO 3 thin films, grown by liquid injection metal organic chemical vapor deposition on Si/SiO 2 , using a mixture of precursors, have been investigated at the nanoscale using an Atomic Force Microscope in the so-called Conductive Atomic Force Microscopy mode. Maps of the leakage currents with a nanometric resolution have been obtained on films elaborated at different temperatures and stoichiometries in order to discriminate the role of each parameter on the onset of leakage currents in the resulting layers. It appears that the higher the deposition temperature, the higher the leakage currents of the films. The mapping with a nanometric precision allows to show a heterogeneous behaviour of the surface with leaky grains and insulating boundaries. The study of films elaborated at the same temperature with different compositions supports the assumption that the leakage currents on Ti-rich layers are far higher than on Sr-rich layers

  4. Synthesis of LaAlO3 by metal organic decomposition on SrTiO3 substrates

    Science.gov (United States)

    Ampuero, J. L.; Iliescu, I.; Boudard, M.; Jamaoui, A.; Rapenne, L.; Jimenez, C.; Roussel, H.

    2013-11-01

    LaAlO3 (LAO) films on SrTiO3 (STO) substrates have been produced by metal organic decomposition using La(C5H7O2)3 and Al(C5H7O2)3 as precursors dissolved in propionic acid. The process consists of growing thin layers through dip coating and subsequent annealing. After testing different cationic ratios of La and Al, it was determined that an optimal ratio leads to a single LAO phase film that grows epitaxially (cube on cube) on top of the STO. This was shown by X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses. These analyses, as well as additional X-ray reflectivity analysis, also revealed that the LAO's thickness obtained in one dip ranges from 8 nm to 16 nm. Taking advantage of the epitaxial conditions, several layers can be stacked by successive dip coatings and annealing to form an epitaxial structure.

  5. Resistance change effect in SrTiO3/Si (001) isotype heterojunction

    Science.gov (United States)

    Huang, Xiushi; Gao, Zhaomeng; Li, Pei; Wang, Longfei; Liu, Xiansheng; Zhang, Weifeng; Guo, Haizhong

    2018-02-01

    Resistance switching has been observed in double and multi-layer structures of ferroelectric films. The higher switching ratio opens up a vast path for emerging ferroelectric semiconductor devices. An n-n+ isotype heterojunction has been fabricated by depositing an oxide SrTiO3 layer on a conventional n-type Si (001) substrate (SrTiO3/Si) by pulsed laser disposition. Rectification and resistive switching behaviors in the n-n+ SrTiO3/Si heterojunction were observed by a conductive atomic force microscopy, and the n-n+ SrTiO3/Si heterojunction exhibits excellent endurance and retention characteristics. The possible mechanism was proposed based on the band structure of the n-n+ SrTiO3/Si heterojunction, and the observed electrical behaviors could be attributed to the modulation effect of the electric field reversal on the width of accumulation and the depletion region, as well as the height of potential of the n-n+ junction formed at the STO/Si interface. Moreover, oxygen vacancies are also indicated to play a crucial role in causing insulator to semiconductor transition. These results open the way to potential application in future microelectronic devices based on perovskite oxide layers on conventional semiconductors.

  6. Enhanced Flux Pinning in Laser Ablated YBCO:BaTiO3 Nanocomposite Thin Film

    Science.gov (United States)

    Jha, Alok K.; Khare, Neeraj; Pinto, R.

    2011-07-01

    The effect of incorporation of BaTiO3 (BTO) nanoparticles on the flux pinning properties of laser deposited YBCO:BTO thin films has been studied. Substantial increase in critical current density (JC) and pinning force density of the nanocomposite thin films was observed. The study of temperature and field dependence of JC of YBCO and YBCO:BTO thin films indicates similar type of pinning. The lattice mismatch between YBCO and BTO seems to introduce more defects resulting in improved flux pinning properties.

  7. Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.

    Science.gov (United States)

    Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N; Hudait, Mantu K; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

    2015-07-23

    We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

  8. Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

    Science.gov (United States)

    Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

    2015-07-01

    We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

  9. Physics of SrTiO3-based heterostructures and nanostructures: a review

    Science.gov (United States)

    Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

    2018-03-01

    This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

  10. Conductivity and structure of sub-micrometric SrTiO3-YSZ composites

    DEFF Research Database (Denmark)

    Ruiz Trejo, Enrique; Thydén, Karl Tor Sune; Bonanos, Nikolaos

    2016-01-01

    Sub-micrometric composites of SrTiO3-YSZ (1:1 volume) and samples of SrTiO3 were prepared by high temperature consolidation of precursors obtained by precipitation with NaOH. The structure development and morphology of the precursors were studied by XRD and SEM. The perovskite and fluorite phases...... in the composites are clearly formed at 600°C with no signs of reaction up to 1100°C; the nominally pure SrTiO3 can be formed at temperatures as low as 400°C. Composites with sub-micrometric grain sizes can be prepared successfully without reaction between the components, although a change in the cell parameter...

  11. Vacancy induced metallicity at the CaHfO3/SrTiO3 interface

    KAUST Repository

    Nazir, Safdar

    2011-03-31

    Density functional theory is used to study the electronic properties of the oxide heterointerfaceCaHfO3/SrTiO3. Structural relaxation is carried out with and without O vacancies. As compared to related interfaces, strongly reduced octahedral distortions are found. Stoichiometric interfaces between the wide band gap insulatorsCaHfO3 and SrTiO3 turn out to exhibit an insulating state. However, interface metallicity is introduced by O vacancies, in agreement with experiment. The reduced octahedral distortions and necessity of O deficiency indicate a less complicated mechanism for the creation of the interfacial electron gas.

  12. LOCAL PIEZOELECTRICITY IN SrTiO3-BiTiO3 CERAMICS

    OpenAIRE

    Grigalaitis, R.; Bagdzevicius, S.; Banys, J.; Tornau, E. E.; Bormanis, K.; Sternberg, A.; Bdikin, I.; Kholkin, A.

    2014-01-01

    Local piezoelectric properties of Bi-doped SrTiO3 ceramics have been investigated by piezoresponse force microscopy. The appearance of both out-of-plane and in-plane polarization components confirmed the piezoelectric nature of the obtained signal. The absence of labyrinth-like structures in observed piezoelectric contrast is not consistent with the expected existence of a relaxor ferroelectric state in this material. The close similarity of local piezoelectric properties in Bi-doped SrTiO3 w...

  13. In-situ YBa2Cu3O7/SrTiO3/YBa2Cu3O7 a-b plane Josephson edge junctions

    International Nuclear Information System (INIS)

    Aharoni, E.; Koren, G.; Polturak, E.; Cohen, D.; Iskevitch, E.

    1992-01-01

    YBCO/SrTiO 3 /YBCO thin film edge junctions were prepared in-situ and characterized. The epitaxial growth of SrTiO 3 on YBCO led to a sharp and well defined junction edge with a very high yield. Typical junctions showed critical currents up to 83 K, with I c ∝ (1 - T/Tc) 2 temperature dependence. Sharp Shapiro steps were observed under microwave radiation at temperatures up to 82 K. A typical diffraction pattern was found in the voltage response of the junctions to transverse magnetic field. (orig.)

  14. Effects of Ba doping on physical properties of La-Ca-Mn-O thin films

    CERN Document Server

    Hong, N H; Sakai, J; Iwasaki, H

    2003-01-01

    Transport and magnetic properties of La-Ba-Ca-Mn-O thin films fabricated by the pulsed laser deposition technique had been investigated systematically to see the effects of substitution of the small atom Ca by Ba which is much bigger. The induced insulator-to-metal (IM) transition was obtained not only in compositions near 0.5 and 0.18 which are boundaries between metallic and insulating phases but also in the heavily doped region. In the region of x > 0.5, the Ba doping causes an anomalous response of the system to the magnetic field and a positive magnetoresistance was observed. Besides, our results concerning the vicinity of 0.5 imply the existence of phase separation. As for x < 0.5, the doping enhances remarkably the paramagnetism-ferromagnetism transition and the IM transition temperatures.

  15. Effect of annealing time on morphological characteristics of Ba(Zr,Ti)O3 thin films

    International Nuclear Information System (INIS)

    Cavalcante, L.S.; Anicete-Santos, M.; Pontes, F.M.; Souza, I.A.; Santos, L.P.S.; Rosa, I.L.V.; Santos, M.R.M.C.; Santos-Junior, L.S.; Leite, E.R.; Longo, E.

    2007-01-01

    Ba(Zr 0.50 Ti 0.50 )O 3 thin films were prepared by the polymeric precursor method using the annealing low temperature of 300 o C for 8, 16, 24, 48, 96 and 192h in a furnace tube with oxygen atmosphere. The X-ray diffraction patterns revealed that the film annealed for 192 h presented some crystallographic planes (1bar 0bar 0) (1bar 1bar 0) and (2bar 0bar 0) in its crystalline lattice. Fourier transformed infrared presented the formation of metal-oxygen stretching at around 756cm -1 . The atomic force microscopy analysis presented the growth of granules in the Ba(Zr 0.50 Ti 0.50 )O 3 films annealed from 8 to 96h. The crystalline film annealed for 192h already presents grains in its perovskite structure. It evidenced a reduction in the thickness of the thin films with the increase of the annealing time

  16. Growth of (100)-highly textured BaBiO{sub 3} thin films on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ferreyra, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 1, Ciudad Universitaria, Buenos Aires (Argentina); Marchini, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Granell, P. [INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Golmar, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, 1650 San Martín, Buenos Aires (Argentina); Albornoz, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); and others

    2016-08-01

    We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO{sub 3} thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO{sub 2} buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO{sub 3} films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics. - Highlights: • BaBiO{sub 3} thin films were grown on Si substrates and characterized. • Films prepared using optimized conditions are highly textured in the (100) direction. • The absence of in-plane texture was demonstrated by X-ray diffraction. • Our films are suitable buffers for the growth of (100)-textured oxide heterostructures.

  17. Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Stamate, Eugen; Pryds, Nini

    2011-01-01

    When depositing amorphous SrTiO3 (STO) films on crystalline STO substrates by pulsed laser deposition, metallic interfaces are observed, though both materials are band-gap insulators. The interfacial conductivity exhibits strong dependence on oxygen pressure during film growth, which is closely...

  18. Physical and electrical properties of SrTiO3 and SrZrO3

    Directory of Open Access Journals (Sweden)

    Muhamad Norhizatol Fashren

    2017-01-01

    Full Text Available Perovskite type oxide strontium titanate (SrTiO3 and strontium zirconate (SrZrO3 ceramic powder has been synthesized using conventional solid state reaction method. The powders were mixed and ground undergone calcinations at 1400°C for 12 h and sintered at 1550°C for 5h. X-ray Diffraction exposes physical properties SrTiO3 which exhibit cubic phase (space group: pm-3m at room temperature meanwhile SrZrO3 has Orthorhombic phase (space group: pnma. The electrical properties such as dielectric constant (εr, dielectric loss (tan δ, and conductivity (σ were studied in variation temperature and frequency. High dielectric constant of SrTiO3 and SrZrO3 were observed at 10 kHz for both samples about 240 and 21 respectively at room temperature. The dielectric loss of SrTiO3 and SrZrO3 is very low loss value approximately 0.00076 and 0.67512 indicates very good dielectric.

  19. Fabrication of SrTiO3 nanotubes via an isomorphic conversion strategy

    Science.gov (United States)

    Yang, Dong; Zou, Xiaoyan; Tong, Zhenwei; Nan, Yanhu; Ding, Fei; Jiang, Zhongyi

    2018-02-01

    One-dimensional nanotubes have attracted enormous attention due to their specific structure and excellent performance since the carbon nanotube was prepared. In this study, the open-ended SrTiO3 nanotubes (STNTs) have been fabricated for the first time via an isomorphic conversion strategy using the protonated titanate nanotubes (HTNTs) as the precursor and template under the hydrothermal treatment. The as-prepared STNTs consist of uniform and continuous multilayers, having inner and outer diameters about 8.0 and 13 nm. The STNT formation involves the exchange of Sr2+ ions with H+ ions in HTNTs and then in situ growth of cubic SrTiO3 crystals by the templating of HTNT frameworks. It is found that the diffusion process of Sr2+ ions plays a critical role in controlling the nanotube morphology of SrTiO3 crystals. In addition, the SrTiO3 nanotubes exhibit high photocatalytic activity for the Cr(VI) reduction, which can reduce nearly 100% Cr(VI) within 6 h under simulated sunlight irradiation. The current strategy may be broadly applicable for fabricating the nanotubes from raw materials without 2D layered nanostructure. [Figure not available: see fulltext.

  20. Resonant soft x-ray scattering from stepped surfaces of SrTiO3

    NARCIS (Netherlands)

    Schlappa, J.; Chang, C.F.; Hu, Z.; Schierle, E.; Ott, H.; Weschke, E.; Kaindl, G.; Huijben, Mark; Rijnders, Augustinus J.H.M.; Blank, David H.A.; Tjeng, L.H.; Schüssler-Langeheine, C.

    2012-01-01

    We studied the resonant diffraction signal from stepped surfaces of SrTiO3 at the Ti 2p ¿ 3d (L2,3) resonance in comparison with x-ray absorption (XAS) and specular reflectivity data. The steps on the surface form an artificial superstructure suitable as a model system for resonant soft x-ray

  1. Influence of cation off-stoichiometry on structural and transport properties of (Ba,La)SnO3 epitaxial thin films grown by pulsed laser deposition

    Science.gov (United States)

    Ozaki, Yusuke; Kan, Daisuke; Shimakawa, Yuichi

    2017-06-01

    We investigate the influences of cation off-stoichiometry on structural and transport properties of 3% La-doped BaSnO3 (BLSO) epitaxial thin films grown on SrTiO3 substrates by pulsed laser deposition. We show that cation off-stoichiometry, namely, Sn excess and Sn deficiency, is introduced by variations in either laser fluence or the cation composition of the target used for the film growth and that the cation off-stoichiometry influences the properties of the grown films. While all films investigated in this study undergo relaxations from the substrate-induced strain, the out-of-plane lattice constant decreases with the increase in the Sn content in the film. The electrical conductivity, carrier concentration, and mobility are strongly dependent on the type of the cation off-stoichiometry (Sn excess and Sn deficiency). The highest room-temperature mobility, 35 cm2/V-1s-1, is seen for a film grown by ablating the stoichiometric target with a fluence of 1.6 J/cm2, which keeps the cation ratio in the film close to the stoichiometric one. The conductivity and the carrier concentration of the Sn-excess films grown with the fluence smaller than 1.6 J/cm2 are as high as 2 × 103 S/cm and 5 × 1020 cm-3, respectively, while the mobility remains as low as 25 cm2/V-1s-1. The observed carrier concentration is slightly higher than that calculated from the stoichiometric composition of BLSO, implying that the excess Sn in the films provides additional carriers and also acts as scattering centers for the carriers. On the other hand, no measurable electrical conduction is observed in the Sn-deficient films grown with a fluence greater than 1.6 J/cm2, indicating that the carriers provided by the dopants are trapped by defects due to the Sn deficiency. We also show that cation off-stoichiometry influences the surface morphology of the films. Our results highlight that the cation stoichiometry of the BLSO films is an important factor influencing their properties.

  2. Phonon mechanism in the most dilute superconductor n-type SrTiO3.

    Science.gov (United States)

    Gor'kov, Lev P

    2016-04-26

    Superconductivity of n-doped SrTiO3, which remained enigmatic for half a century, is treated as a particular case of nonadiabatic phonon pairing. Motivated by experiment, we suggest the existence of the mobility edge at some dopant concentration. The itinerant part of the spectrum consists of three conduction bands filling by electrons successively. Each subband contributes to the superconducting instability and exhibits a gap in its energy spectrum at low temperatures. We argue that superconductivity of n-doped SrTiO3 results from the interaction of electrons with several longitudinal (LO) optical phonons with frequencies much larger than the Fermi energy. Immobile charges under the mobility edge threshold increase the "optical" dielectric constant far above that in clean SrTiO3 placing control on the electron-LO phonon interaction. TC initially grows as density of states at the Fermi surface increases with doping, but the accumulating charges reduce the electrons-polar-phonon interaction by screening the longitudinal electric fields. The theory predicts maxima in the TC-concentration dependence indeed observed experimentally. Having reached a maximum in the third band, the transition temperature finally decreases, rounding out the TC (n) dome, the three maxima with accompanying superconducting gaps emerging consecutively as electrons fill successive bands. This arises from attributes of the LO optical phonon pairing of electrons. The mechanism of LO phonons opens the path to increasing superconducting transition temperature in bulk transition-metal oxides and other polar crystals, and in charged 2D layers at the LaAaO3/SrTiO3 interfaces and on the SrTiO3 substrates.

  3. Gd-doped BaSnO3: A transparent conducting oxide with localized magnetic moments

    Science.gov (United States)

    Alaan, Urusa S.; Shafer, Padraic; N'Diaye, Alpha T.; Arenholz, Elke; Suzuki, Y.

    2016-01-01

    We have synthesized transparent, conducting, paramagnetic stannate thin films via rare-earth doping of BaSnO3. Gd3+ (4f7) substitution on the Ba2+ site results in optical transparency in the visible regime, low resistivities, and high electron mobilities, along with a significant magnetic moment. Pulsed laser deposition was used to stabilize epitaxial Ba0.96Gd0.04SnO3 thin films on (001) SrTiO3 substrates, and compared with Ba0.96La0.04SnO3 and undoped BaSnO3 thin films. Gd as well as La doping schemes result in electron mobilities at room temperature that exceed those of conventional complex oxides, with values as high as 60 cm2/V.s (n = 2.5 × 1020 cm-3) and 30 cm2/V.s (n = 1 × 1020 cm-3) for La and Gd doping, respectively. The resistivity shows little temperature dependence across a broad temperature range, indicating that in both types of films the transport is not dominated by phonon scattering. Gd-doped BaSnO3 films have a strong magnetic moment of ˜7 μB/Gd ion. Such an optically transparent conductor with localized magnetic moments may unlock opportunities for multifunctional devices in the design of next-generation displays and photovoltaics.

  4. Microscopic characterization of Fe nanoparticles formed on SrTiO3(001 and SrTiO3(110 surfaces

    Directory of Open Access Journals (Sweden)

    Miyoko Tanaka

    2016-06-01

    Full Text Available Fe nanoparticles grown on SrTiO3 (STO {001} and {110} surfaces at room temperature have been studied in ultrahigh vacuum by means of transmission electron microscopy and scanning tunnelling microscopy. It was shown that some Fe nanoparticles grow epitaxially. They exhibit a modified Wulff shape: nanoparticles on STO {001} surfaces have truncated pyramid shapes while those on STO {110} surfaces have hexagonal shapes. From profile-view TEM images, approximate values of the adhesion energy of the nanoparticles for both shapes are obtained.

  5. Experimental study of the plasma fluorination of Y-Ba-Cu-O thin films

    CERN Document Server

    Li Qi; Ji Zheng Ming; Feng Yi Jun; Kang Lin; Yang Sen Zu; Wu Pei Heng; Wang Xiao Shu; Ye Yuda

    2002-01-01

    The authors have experimentally studied the surface modifications of Y-Ba-Cu-O (YBCO) thin films using CF sub 4 plasma. The intensity of the plasma fluorination was controlled by changing the biasing voltage and the time of the plasma treatment. Microstructural analyses reveal that the oxygen content of the YBCO thin films was changed. Transport measurements of sufficient fluorinated YBCO films imply that the films changed totally into an oxygen-deficient semi-conducting state. From these experimental results, the authors believe that plasma fluorination is quite a useful method to form controllable a thin barrier layer in fabricating interface engineered junctions and to form a stable narrow weak-link region in fabricating planar superconductor-normal-superconductor junctions

  6. Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Choi, Miri; Posadas, Agham; Dargis, Rytis; Shih, Chih-Kang; Demkov, Alexander A.; Triyoso, Dina H.; David Theodore, N.; Dubourdieu, Catherine; Bruley, John; Jordan-Sweet, Jean

    2012-01-01

    An epitaxial layer of SrTiO 3 grown directly on Si may be used as a pseudo-substrate for the integration of perovskite oxides onto silicon. When SrTiO 3 is initially grown on Si (001), it is nominally compressively strained. However, by subsequent annealing in oxygen at elevated temperature, an SiO x interlayer can be formed which alters the strain state of SrTiO 3 . We report a study of strain relaxation in SrTiO 3 films grown on Si by molecular beam epitaxy as a function of annealing time and oxygen partial pressure. Using a combination of x-ray diffraction, reflection high energy electron diffraction, and transmission electron microscopy, we describe the process of interfacial oxidation and strain relaxation of SrTiO 3 on Si (001). Understanding the process of strain relaxation of SrTiO 3 on silicon will be useful for controlling the SrTiO 3 lattice constant for lattice matching with functional oxide overlayers.

  7. Local Structure and Anisotropy in the Amorphous Precursor= to Ba-Hexaferrite Thin Films

    Science.gov (United States)

    Snyder, J. E.; Harris, V. G.; Koon, N. C.; Sui, X.; Kryder, M. H.

    1996-03-01

    Ba-hexaferrite thin-films for recording media applications are commonly fabricated by a two-step process: sputter-deposition of an amorphous precursor, followed by annealing to crystallize the BaFe_12O_19 phase. The magnetic anisotropy of the crystalline films can be either in-plane or perpendicular, depending on the sputtering process used in the first step. However, conventional characterization techniques (x-ray diffraction and TEM) have been unable to observe any structure in the amorphous precursor films. In this study, such films are investigated by PD-EXAFS (polarization-dependent extended x-ray absorption fine structure). An anisotropic local ordered structure is observed around both Fe and Ba atoms in the "amorphous" films. This anisotropic local structure appears to determine the orientation of the fast-growing basal plane directions during crystallization, and thus the directions of the c-axes and the magnetic anisotropy. Results suggest that the structure of the amorphous films consists of networks made up of units of Fe atoms surrounded by their O nearest neighbors, that are connected together. Ba atoms appear to fit into in-between spaces as network-modifiers.

  8. Stability of Tl-Ba-Ca-Cu-O superconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Siegal, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Overmyer, D. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Venturini, E. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Padilla, R. R. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Provencio, P. N. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States)

    1999-12-01

    We report the stability of TlBa{sub 2}CaCu{sub 2}O{sub 7} and Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8} on LaAlO{sub 3}(100) epitaxial thin films, under a variety of conditions. All films are stable in acetone and methanol and with repeated thermal cycling to cryogenic temperatures. Moisture, especially vapor, degrades film quality rapidly. These materials are stable to high temperatures in either N{sub 2} or O{sub 2} ambients. While total degradation, resulting from Tl depletion, occurs at the same temperatures for both phases, 600 degree sign C in N{sub 2} and 700 degree sign C in O{sub 2}, the onset of degradation occurs at somewhat lower temperatures for TlBa{sub 2}CaCu{sub 2}O{sub 7} than for Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8}. (c) 1999 Materials Research Society.

  9. Growing barium hexaferrite (BaFe{sub 12}O{sub 19}) thin films using chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Budiawanti, Sri, E-mail: awanty77@yahoo.com [Graduate Program of Materials Science, Department of Physics, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Faculty of Teacher Training and Education, Sebelas Maret University (Indonesia); Soegijono, Bambang [Multiferroic Laboratory, Department of Physics, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia)

    2016-04-19

    Barium hexaferrite (BaFe{sub 12}O{sub 19}, or simply known as BaM) thin films has been recognized as a potential candidate for microwave-based devices, magnetic recording media and data storage. To grow BaM thin films, chemical solution deposition is conducted using the aqueous solution of metal nitrates, which involves spin coatings on Si substrates. Furthermore, Thermal Gravimeter Analysis (TGA), X-Ray Diffractometer (XRD), Scanning Electron Microscopy (SEM) and Vibrating Sample Magnetometer (VSM) are applied to evaluate the decomposition behavior, structure, morphology, and magnetic properties of BaM thin films. Additionally, the effects of number of layers variation are also investigated. Finally, magnetic properties analysis indicates the isotropic nature of the films.

  10. PHYSICAL CHARACTERISTICS AND MAGNETIC PROPERTIES OF BAFE12O19/SRTIO3 BASED COMPOSITES DERIVED FROM MECHANICAL ALLOYING

    Directory of Open Access Journals (Sweden)

    Rahmat Doni Widodo

    2016-03-01

    Full Text Available Barium hexaferrite and strontium titanate are well established permanent magnet and piezoelectric materials which are technologically and scientifically attractive due to their potential for various applications in the field of magnetic electronics functional materials. However, the material properties for both require a careful control of grain structure as well as microstructure design to meet a specific application. In this work, we report some results of materials characterization especially particles and grains which were promoted during mechanical milling of a BaFe12O19/SrTiO3 composite system. These are including mean particle size characterization by Particle Size Analyzer and mean grain size determination by means of line broadenning analysis employing a step scanning counting in XRD apparatus for composite powders at various milling time up to 60 hours. It was found that the particle size of composite powders initially increased due to laminated layers formation of a composite and then decreased to an asymptotic value of ~8 ?m as the milling time extended even to a relatively longer time. However, based on results of line broadening analysis the mean grain size of the particles was found in the nanometer scale. We thus believed that mechanical blending and milling of mixture components for the composite materials has promoted heterogeneous nucleation and only after successive sintering at 1100 oC the milled powder transformed into particles of nanograin. In thireport, microstructure as well as magnetic properties for the composite is also briefly discussed.

  11. Carrier density modulation by structural distortions at modified LaAlO3/SrTiO3 interfaces

    International Nuclear Information System (INIS)

    Schoofs, Frank; Vickers, Mary E; Egilmez, Mehmet; Fix, Thomas; Kleibeuker, Josée E; MacManus-Driscoll, Judith L; Blamire, Mark G; Carpenter, Michael A

    2013-01-01

    In order to study the fundamental conduction mechanism of LaAlO 3 /SrTiO 3 (LAO/STO) interfaces, heterostructures were modified with a single unit cell interface layer of either an isovalent titanate ATiO 3 (A = Ca, Sr, Sn, Ba) or a rare earth modified Sr 0.5 RE 0.5 TiO 3 (RE = La, Nd, Sm, Dy) between the LAO and the STO. A strong coupling between the lattice strain induced in the LAO layer by the interfacial layers and the sheet carrier density in the STO substrate is observed. The observed crystal distortion of the LAO is large and it is suggested that it couples into the sub-surface STO, causing oxygen octahedral rotation and deformation. We propose that the ‘structural reconstruction’ which occurs in the STO surface as a result of the stress in the LAO is the enabling trigger for two-dimensional conduction at the LAO/STO interface by locally changing the band structure and releasing trapped carriers. (paper)

  12. Growth control of oxygen stoichiometry in homoepitaxial SrTiO3 films by pulsed laser epitaxy in high vacuum.

    Science.gov (United States)

    Lee, Ho Nyung; Ambrose Seo, Sung S; Choi, Woo Seok; Rouleau, Christopher M

    2016-01-29

    In many transition metal oxides, oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to obtain high quality single crystal films having the right oxygen stoichiometry, especially in a high vacuum environment, has been viewed as a challenge. In this work, we show that, through proper control of the plume kinetic energy, stoichiometric crystalline films can be synthesized without generating oxygen defects even in high vacuum. We use a model homoepitaxial system of SrTiO3 (STO) thin films on single crystal STO substrates. Physical property measurements indicate that oxygen vacancy generation in high vacuum is strongly influenced by the energetics of the laser plume, and it can be controlled by proper laser beam delivery. Therefore, our finding not only provides essential insight into oxygen stoichiometry control in high vacuum for understanding the fundamental properties of STO-based thin films and heterostructures, but expands the utility of pulsed laser epitaxy of other materials as well.

  13. Vortex dynamics at subcritical currents at microwave frequencies in DyBa2Cu3O7-δ thin films

    NARCIS (Netherlands)

    Banerjee, Tamalika; Bagwe, V.C.; John, J.; Pai, S.P.; Kanjilal, D.

    2004-01-01

    We have investigated the dynamics of vortices at subcritical microwave currents in dc magnetic fields (up to 0.8 T) in epitaxial DyBa2Cu3O7-δ (DBCO) thin films. Microwave measurements were performed using microstrip resonators as test vehicles at 4.88 GHz and 9.55 GHz on laser ablated DBCO thin

  14. Stability of Tl-Ba-Ca-Cu-O Superconducting Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Siegal, M.P.; Overmyer, D.L.; Venturini, E.L.; Padilla, R.R.; Provencio, P.N.

    1999-08-23

    We report the stability of TlBa{sub 2}CaCu{sub 2}O{sub 7} (Tl-1212) and Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8} (T1-2212) thin films and by inference, the stability of TlBa{sub 2}Ca{sub 2}Cu{sub 3}O{sub 9} (Tl-1223) and Tl{sub 2}Ba{sub 2}Ca{sub 2}Cu{sub 3}O{sub 10} (Tl-2223) thin films, under a variety of conditions. In general, we observe that the stability behavior of the single Tl-O layer materials (Tl-1212 and Tl-1223)are similar and the double Tl-O layer materials (Tl-2212 and Tl-2223) are similar. All films are stable with repeated thermal cycling to cryogenic temperatures. Films are also stable in acetone and methanol. Moisture degrades film quality rapidly, especially in the form of vapor. Tl-1212 is more sensitive to vapor than Tl-2212. These materials are stable to high temperatures in either N{sub 2}, similar to vacuum for the cuprates, and O{sub 2} ambients. While total degradation of properties (superconducting and structural) occur at the same temperatures for all phases, 600 C in N{sub 2} and 700 C in O{sub 2}, the onset of degradation occurs at somewhat lower temperatures for Tl-1212 than for Tl-2212 films. In all cases, sample degradation is associated with Tl depletion from the films.

  15. Electronic properties of Cr-, B-doped and codoped SrTiO3

    Science.gov (United States)

    Maldonado, Frank; Maza, Luz; Stashans, Arvids

    2017-01-01

    Spin-polarized density functional theory (DFT) computations have been carried out to investigate Cr-, B-doping as well as codoping in the SrTiO3 crystal. Impact of the oxygen vacancy as an intrinsic point defect has been also taken into consideration. In order to describe more precisely 3d electrons of the Ti and Cr atoms, Hubbard-like U term in the DFT has been introduced. Outcomes of the calculations reveal occupied states within the forbidden energy region arguing that these in-gap states might be responsible for visible light photocatalysis in the SrTiO3. Structural and magnetic features of the doped and codoped material are discussed as well.

  16. Nonmonotonic anisotropy in charge conduction induced by antiferrodistortive transition in metallic SrTiO3

    Science.gov (United States)

    Tao, Qian; Loret, Bastien; Xu, Bin; Yang, Xiaojun; Rischau, Carl Willem; Lin, Xiao; Fauqué, Benoît; Verstraete, Matthieu J.; Behnia, Kamran

    2016-07-01

    Cubic SrTiO3 becomes tetragonal below 105 K. The antiferrodistortive (AFD) distortion leads to clockwise and counterclockwise rotation of adjacent TiO6 octahedra. This insulator becomes a metal upon the introduction of extremely low concentration of n -type dopants. However, signatures of the structural phase transition in charge conduction have remained elusive. Employing the Montgomery technique, we succeed in resolving the anisotropy of charge conductivity induced by the AFD transition, in the presence of different types of dopants. We find that the slight lattice distortion (liquids, the anisotropy has opposite signs for elastic and inelastic scattering. Increasing the concentration of dopants leads to a drastic shift in the temperature of the AFD transition either upward or downward. The latter result puts strong constraints on any hypothetical role played by the AFD soft mode in the formation of Cooper pairs and the emergence of superconductivity in SrTiO3.

  17. Magnetism Control by Doping in LaAlO3/SrTiO3 Heterointerfaces.

    Science.gov (United States)

    Yan, Hong; Zhang, Zhaoting; Wang, Shuanhu; Wei, Xiangyang; Chen, Changle; Jin, Kexin

    2018-04-25

    Magnetic two-dimensional electron gases at the oxide interfaces are always one of the key issues in spintronics, giving rise to intriguing magnetotransport properties. However, reports about magnetic two-dimensional electron gases remain elusive. Here, we obtain the magnetic order of LaAlO 3 /SrTiO 3 systems by introducing magnetic dopants at the La site. The transport properties with a characteristic of metallic behavior at the interfaces are investigated. More significantly, magnetic-doped samples exhibit obvious magnetic hysteresis loops and the mobility is enhanced. Meanwhile, the photoresponsive experiments are realized by irradiating all samples with a 360 nm light. Compared to magnetism, the effects of dopants on photoresponsive and relaxation properties are negligible because the behavior originates from SrTiO 3 substrates. This work paves a way for revealing and better controlling the magnetic properties of oxide heterointerfaces.

  18. Transport study of Ba-deficient thin-film Y123 superconductors enriched with Na

    Energy Technology Data Exchange (ETDEWEB)

    Pekala, M.; Bougrine, H.; Azoulay, J.; Ausloos, M. [Dept. of Chem., Warsaw Univ. (Poland)

    1995-08-01

    Nominal Y{sub 0.3}Ba{sub 0.6}Na{sub 0.1}CuO{sub 3-{delta}} thin films were prepared with small grains having an orientation of the c axis perpendicular to the MgO substrate. The electrical resistivity and the thermoelectric power in the absence and in the presence of a magnetic field are reported. The magnetic field dependence of the irreversibility line is discussed. The role of the field for disentangling intragrain and intergrain effects in both coefficients is emphasized. (author)

  19. Promoting Photocatalytic Overall Water Splitting by Controlled Magnesium Incorporation in SrTiO3 Photocatalysts.

    Science.gov (United States)

    Han, Kai; Lin, Yen-Chun; Yang, Chia-Min; Jong, Ronald; Mul, Guido; Mei, Bastian

    2017-11-23

    SrTiO 3 is a well-known photocatalyst inducing overall water splitting when exposed to UV irradiation of wavelengths water-splitting efficiency of the Mg:SrTiO x composites is up to 20 times higher compared to SrTiO 3 containing similar catalytic nanoparticles, and an apparent quantum yield (AQY) of 10 % can be obtained in the wavelength range of 300-400 nm. Detailed characterization of the Mg:SrTiO x composites revealed that Mg is likely substituting the tetravalent Ti ion, leading to a favorable surface-space-charge layer. This originates from tuning of the donor density in the cubic SrTiO 3 structure by Mg incorporation and enables high oxygen-evolution rates. Nevertheless, interfacing with an appropriate hydrogen evolution catalyst is mandatory and non-trivial to obtain high-performance in water splitting. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

    KAUST Repository

    Wu, S.

    2013-12-12

    Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

  1. The synthesis of SrTiO3 nanocubes and the analysis of nearly ideal diode application of Ni/SrTiO3 nanocubes/n-Si heterojunctions

    Science.gov (United States)

    Bilal Taşyürek, Lütfi; Sevim, Melike; Çaldıran, Zakir; Aydogan, Sakir; Metin, Önder

    2018-01-01

    A perovskite type of strontium titanate (SrTiO3) nanocubes (NCs) were synthesized by using a hydrothermal process and the thin films of these NCs were deposited on an n-type silicon wafer by spin coating technique. As-synthesized SrTiO3 NCs were characterized by transmission electron microscope, scanning electron microscope, energy dispersive x-ray, x-ray diffraction and Raman spectroscopy. After evaporation of 12 Ni dots on the SrTiO3 NCs thin films deposited on n-Si, the Ni/SrTiO3 NCs/n-Si heterojunction devices were fabricated for the first time. The ideality factors of the twelve fabricated devices were vary from 1.05 to 1.22 and the barrier height values varied from 0.64 to 0.68 eV. Furthermore, since all devices yielded similar characteristics, only the current-voltage and the capacitance-voltage of one selected device (named H1) were investigated in detailed. The series resistance of this device was calculated as 96 Ω.

  2. Temperature effect on the retention of U(VI) by SrTiO3

    International Nuclear Information System (INIS)

    Garcia Rosales, G.

    2007-11-01

    The purpose of this research was the study of the interaction mechanisms between U(VI) ions and SrTiO 3 surfaces versus pH and temperature: 25, 50, 75 and 90 C. Firstly, a physicochemical characterization was realized (DRX, MEB, FTIR) and the surface site density was determined. The potentiometric titration data were simulated, for each temperature, using the constant capacitance model and taking into account bath protonation of the ≡Sr-OH surface sites and deprotonation of the ≡Ti-OH ones (one pK a model). Both enthalpy and entropy changes, corresponding to the surface acid-base reactions, were evaluated using the van't Hoff relation. U(VI) was sorbed onto SrTiO 3 powder in the pH range 0.5-5.0 with an U(VI) initial concentration 1.10 -4 M. By TRLIFS two U(VI) complexes were detected associated with two lifetime values (60 ± 5 and 12 ± 2 μs at 25 C). The sorption edges were simulated using FITEQL 4.0 software. The surface complexation constants of the system SrTiO 3 /U(VI) between 25 and 90 C temperature range were thus obtained with the constant capacitance model considering two reactive surface sites. It reveals that two types of surface complex, namely [(≡SrOH)(≡TiOH)UO 2 ] 2+ and [(≡TiOH)(≡TiO)UO 2+ ] 2+ , are needed to properly describe the experimental observations. By application of the van't Hoff equation, Delta R S 0 and Delta R H 0 were obtained, which indicated an endothermic sorption process. Finally, an energy transfer study was realised by TRLIFS. The energy transfer between Tb 3+ and Eu 3+ ions sorbed onto SrTiO 3 powders were investigated. The results showed that the energy transfer between Tb 3+ and Eu 3+ is a non-radiative process and follows a dipole-dipole type interaction. A formalism based on the Dexter and the Inokuti-Hirayama theories was used to calculate the distances (2,7-3,4 Angstroms between Tb 3+ and Eu 3+ onto SrTiO 3 surface. (author)

  3. Rapid Synthesis and Formation Mechanism of Core-Shell-Structured La-Doped SrTiO3 with a Nb-Doped Shell

    Directory of Open Access Journals (Sweden)

    Nam-Hee Park

    2015-07-01

    Full Text Available To provide a convenient and practical synthesis process for metal ion doping on the surface of nanoparticles in an assembled nanostructure, core-shell-structured La-doped SrTiO3 nanocubes with a Nb-doped surface layer were synthesized via a rapid synthesis combining a rapid sol-precipitation and hydrothermal process. The La-doped SrTiO3 nanocubes were formed at room temperature by a rapid dissolution of NaOH pellets during the rapid sol-precipitation process, and the Nb-doped surface (shell along with Nb-rich edges formed on the core nanocubes via the hydrothermal process. The formation mechanism of the core-shell-structured nanocubes and their shape evolution as a function of the Nb doping level were investigated. The synthesized core-shell-structured nanocubes could be arranged face-to-face on a SiO2/Si substrate by a slow evaporation process, and this nanostructured 10 μm thick thin film showed a smooth surface.

  4. Growth parameter control toward mobility enchancement in doped BaSnO3 thin films

    Science.gov (United States)

    Singh, Prastuti; Swartz, Adrian; Lu, Di; Nishio, Kazunori; Hikita, Yasuyuki; Hwang, Harold

    Doped BaSnO3 is known to exhibit high electron mobility at room temperature, showing great prospects as an transparent conducting oxide. However, when grown epitaxially on perovskite substrates, thin films exhibit reduced mobilities compared with bulk single crystals due to scattering from the formation of dislocations at the interface of the thin film and substrate. In this emerging field, correlating synthesis growth regimes, structure, and stoichiometry with transport properties is critical for developing next level oxide electronic devices. Here, we will discuss our results linking growth conditions and transport properties of La-doped BaSnO3 (BLSO) to enhance mobility. In addition to varying standard growth parameters, we deposited BLSO on a hygroscopic pseudo-perovskite buffer layer. The pseudo-perovskite buffer acts as a sacrificial layer that can be selectively etched to produce conductive free-standing BLSO membranes, free of the underlying substrate. This allows us to minimize film dislocation density and examine BLSO transport properties in the limit of no substrate.

  5. Tuning the electronic properties at the surface of BaBiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ferreyra, C. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires (Argentina); Guller, F.; Llois, A. M.; Vildosola, V. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Marchini, F.; Williams, F. J. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Lüders, U. [CRISMAT, CNRS UMR 6508, ENSICAEN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 4 (France); Albornoz, C. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Leyva, A. G. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, (1650), San Martín, Buenos Aires (Argentina); and others

    2016-06-15

    The presence of 2D electron gases at surfaces or interfaces in oxide thin films remains a hot topic in condensed matter physics. In particular, BaBiO{sub 3} appears as a very interesting system as it was theoretically proposed that its (001) surface should become metallic if a Bi-termination is achieved (Vildosola et al., PRL 110, 206805 (2013)). Here we report on the preparation by pulsed laser deposition and characterization of BaBiO{sub 3} thin films on silicon. We show that the texture of the films can be tuned by controlling the growth conditions, being possible to stabilize strongly (100)-textured films. We find significant differences on the spectroscopic and transport properties between (100)-textured and non-textured films. We rationalize these experimental results by performing first principles calculations, which indicate the existence of electron doping at the (100) surface. This stabilizes Bi ions in a 3+ state, shortens Bi-O bonds and reduces the electronic band gap, increasing the surface conductivity. Our results emphasize the importance of surface effects on the electronic properties of perovskites, and provide strategies to design novel oxide heterostructures with potential interface-related 2D electron gases.

  6. Local Structure of the Amorphous Precursor to Ba-Hexaferrite Thin Films: An Anisotropic Octahedral Fe-O Glass Network

    Science.gov (United States)

    Snyder, J. E.; Harris, V. G.; Koon, N. C.; Sui, X.; Kryder, M. H.

    1996-10-01

    Anisotropic local structure has been observed around both the Fe and Ba ions in the amorphous precursor to Ba-hexaferrite thin films, using polarization-dependent extended x-ray-absorption fine structure. This anisotropic local structure, consisting mainly of a network of Fe-O octahedra, determines the orientation of the fast-growing basal planes during crystallization, and thus the directions of the c axes and the resulting magnetic anisotropy.

  7. Growth studies of Ba(1-x)K(x)BiO3-delta thin films by pulsed-laser deposition

    NARCIS (Netherlands)

    Mijatovic, D.; Rijnders, Augustinus J.H.M.; Hilgenkamp, Johannes W.M.; Blank, David H.A.; Rogalla, Horst

    2002-01-01

    A study is presented on pulsed-laser deposition of thin films of Ba1−xKxBiO3−δ (BKBO) and its parent compound BaBiO3−δ (BBO). BKBO is a non-cuprate high-TC (30 K) superconductor with relatively long coherence length (5 nm) and shows BCS like behavior. Therefore, BKBO is an attractive candidate for

  8. In situ fabrication of high-Tc Y-Ba-Cu-O thin film by resistive evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J. (Centre for Technological Education, Holon (Israel) Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv Univ. (Israel))

    1992-11-20

    We have recently used a simple conventional oil-pumped vacuum system equipped with a resistively heated boat for in situ fabrication of Y-Ba-Cu-O high Tc superconductivity phase thin films at a relatively low substrate temperature. A well-ground mixture of yttrium, BaF[sub 2] and copper, weighed in the atomic proportion to yield a stoichiometric YBa[sub 2]Cu[sub 3]O[sub 7-[delta

  9. Electrical-transport properties and microwave device performance of sputtered TlCaBaCuO superconducting thin films

    Science.gov (United States)

    Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

    1992-01-01

    The paper describes the processing and electrical transport measurements for achieving reproducible high-Tc and high-Jc sputtered TlCaBaCuO thin films on LaAlO3 substrates, for microelectronic applications. The microwave properties of TlCaBaCuO thin films were investigated by designing, fabricating, and characterizing microstrip ring resonators with a fundamental resonance frequency of 12 GHz on 10-mil-thick LaAlO3 substrates. Typical unloaded quality factors for a ring resonator with a superconducting ground plane of 0.3 micron-thickness and a gold ground plane of 1-micron-thickness were above 1500 at 65 K. Typical values of penetration depth at 0 K in the TlCaBaCuO thin films were between 7000 and 8000 A.

  10. Fabrication and patterning of Tl-Ca-Ba-Cu-O superconducting thin films on LaAlO3 substrates

    International Nuclear Information System (INIS)

    Subramanyam, G.; Radpour, F.; Kapoor, V.J.; Lemon, G.H.

    1990-01-01

    This paper reports on high critical transition temperature (high T c ) superconducting thin films of Tl-Ca-Ba-Cu-O (TlCaBaCuO) that were fabricated on LaAlO 3 substrates in an rf magnetron sputtering system. As-deposited thin films were sintered and annealed in a thallium rich ambient to obtain superconductivity with a zero resistance critical temperature (T c ) at 103 K. X-ray diffraction (XRD) results showed that the thin films were highly c-axis oriented with both Tl 2 Ca 2 Ba 2 Cu 3 O x (2223) and Tl 2 Ca 1 Ba 2 Cu 2 O x (2122) phases present. A wet chemical etching process was used for patterning the as-deposited TlCaBaCuO thin films. Linewidths as small as 25 μm were patterned using standard photolithography and wet chemical etching techniques. A ring resonator designed for a center frequency of 30 GHz has been fabricated

  11. Structural and electrical properties of barium titanate (BaTiO3 thin films obtained by spray pyrolysis method

    Directory of Open Access Journals (Sweden)

    Kumbhar S.S.

    2015-12-01

    Full Text Available Barium titanate (BaTiO3 thin films have been prepared using the spray pyrolysis method. The films were deposited onto a glass substrate at varying substrate temperature ranging from 250 to 350 °C with the interval of 50 °C. The structural, morphological, electrical and dielectric properties of the deposited films have been studied. The X-ray diffraction pattern confirmed the polycrystalline nature of the films with a cubic crystal structure. X-ray photoelectron spectroscopy (XPS showed a good agreement of the thin films stoichiometry with BaTiO3. A presence of Ba, Ti and O in the BaTiO3 thin films was observed by energy dispersive X-ray analysis. The scanning electron microscopy (SEM showed the heterogeneous distribution of cubical grains all over the substrate. The grain size decreased with an increase in substrate temperature. The dielectric constant and dielectric loss showed the dispersion behaviour as a function of frequency, measured in the frequency range of 20 Hz to 1 MHz. The AC conductivity (σac measurement showed the linear nature of obtained films, which confirms conduction mechanism due to small polarons. Impedance spectroscopy has been used to study the electrical behaviour of BaTiO3 ferroelectric thin films. The ferroelectric hysteresis loop has been recorded at room temperature.

  12. Development of Strontium Titanate Thin films on Technical Substrates for Superconducting Coated Conductors

    DEFF Research Database (Denmark)

    Pallewatta, Pallewatta G A P; Yue, Zhao; Grivel, Jean-Claude

    2012-01-01

    SrTiO3 is a widely studied perovskite material due to its advantages as a template for high temperature superconducting tapes. Heteroepitaxial SrTiO3 thin films were deposited on Ni/W tapes using dip-coating in a precursor solution followed by drying and annealing under reducing conditions. Nearl...

  13. Hydrogen impurity in SrTiO3: structure, electronic properties and migration

    International Nuclear Information System (INIS)

    Villamagua, Luis; Barreto, Rafael; Procel, Luis Miguel; Stashans, Arvids

    2007-01-01

    The present paper reports a computational investigation of the geometry and electronic structure as well as the migration of a hydrogen impurity in the cubic SrTiO 3 crystal. The study is done using an approach based on the Hartree-Fock theory and developed for periodic systems. It is found that the H impurity forms the so-called OH group at the equilibrium. Analysis of electron density within the defective region implies the enhancement in covalent chemical bonding. A possible defect migration has been also investigated

  14. Thermoelectric performance enhancement of SrTiO3 by Pr doping

    KAUST Repository

    Kahaly, M. Upadhyay

    2014-01-01

    We investigate Pr doping at the Sr site as a possible route to enhance the thermoelectric behavior of SrTiO3-based materials, using first principles calculations in full-potential density functional theory. The effects of the Pr dopant on the local electronic structure and resulting transport properties are compared to common Nb doping. We demonstrate a substantial enhancement of the thermoelectric figure of merit and develop an explanation for the positive effects, which opens new ways for materials optimization by substitutional doping at the perovskite B site. © 2014 the Partner Organisations.

  15. Diversity of hydrogen configuration and its roles in SrTiO3−δ

    Directory of Open Access Journals (Sweden)

    Yoshiki Iwazaki

    2014-01-01

    Full Text Available As a source of carrier electron, various configurations of hydrogen in SrTiO3 are searched by using first-principles calculations. The most stable form of hydrogen is found to be H−, where doubly charged oxygen vacancy VO2+ changes into singly charged HO+. Most importantly, an additional H− is found to be weakly trapped by HO+, which completely neutralizes carrier electrons by forming (2HO0. These unexpected behaviors of hydrogen, which can explain reported experimental results, expand the role of the hydrogen in carrier-control technology in transition-metal oxides.

  16. From flexoelectricity to absolute deformation potentials: The case of SrTiO3

    Science.gov (United States)

    Stengel, Massimiliano

    2015-11-01

    Based on recent developments in the first-principles theory of flexoelectricity, I generalize the concept of absolute deformation potential to arbitrary nonpiezoelectric insulators and deformation fields. To demonstrate this formalism, I calculate the response of the band edges of SrTiO3 to both dynamic (sound waves) and static (bending) mechanical loads, respectively, at the bulk level and in a slab geometry. The results have important implications for the understanding of strain-gradient-related phenomena in crystalline insulators, formally unifying the description of band-structure and electrostatic effects.

  17. Enhanced photocatalytic activity of SrTiO3 photocatalyst by topotactic preparation

    Science.gov (United States)

    Cao, Jiafeng; Huang, Xianshan; Liu, Yi; Wu, Jianguang; Ji, Yuexia

    2016-11-01

    Novel SrTiO3 (ST) photocatalysts with different shapes such as plates, rods and cubes were successfully synthesized based on a topotactic approach. The rod-like ST particles formed in situ at the plates show superior photocatalytic activities towards the decomposition of Rhodamine B than the plate-like and the cubic particles under visible-light irradiation, which could be attributed to the crystal orientation exposing highly active sites accompanied by the crystallite growth in molten salt. The results reveal an effective approach for fabrication of novel photocatalysts of perovskite structure with enhanced photocatalytic activities.

  18. Synthesis and characterization of multilayered BaTiO3/NiFe2O4 thin films

    Directory of Open Access Journals (Sweden)

    Branimir Bajac

    2013-03-01

    Full Text Available Presented research was focused on the fabrication of multiferroic thin film structures, composed of ferrielectric barium titanate perovskite phase and magnetostrictive nickel ferrite spinel phase. The applicability of different, solution based, deposition techniques (film growth from solution, dip coating and spin coating for thefabrication of multilayered BaTiO3 /NiFe2O4 thin films was investigated. It was shown that only spin coating produces films of desired nanostructure, thickness and smooth and crackfree surfaces.

  19. Y-Ba-Cu-O thin films as high speed IR detectors

    International Nuclear Information System (INIS)

    Kwok, H.S.; Zheng, J.P.; Ying, Q.Y.

    1990-01-01

    Y-Ba-Cu-O thin film infrared detectors were fabricated and studied with various lasers. Operation of the detector in both the bolometric and nonbolometric modes was investigated at 10 microns with a CO2 laser. In the bolometric mode, the detectivity of the detector at 90 K was 2.1 x 10 to the 8th cm sq rt Hz/W with a response time of 15 microsec, corresponding to a bandwidth of 70 KHz. The speed of the detector in the nonbolometric mode was much faster and was beyond the instrument resolution. With a picosecond N2 laser, the output showed an instrument limited duration of 2 ns. The detectivity could not be determined in the nonbolometric mode due to the extremely low noise. The superconducting film quality is critical to the performance of these detectors. 27 refs

  20. Tuning the dead-layer behavior of La0.67Sr0.33MnO3/SrTiO3 via interfacial engineering

    Science.gov (United States)

    Peng, R.; Xu, H. C.; Xia, M.; Zhao, J. F.; Xie, X.; Xu, D. F.; Xie, B. P.; Feng, D. L.

    2014-02-01

    The dead-layer behavior, deterioration of the bulk properties in near-interface layers, restricts the applications of many oxide heterostructures. We present the systematic study of the dead-layer in La0.67Sr0.33MnO3/SrTiO3 grown by ozone-assisted molecular beam epitaxy. Dead-layer behavior is systematically tuned by varying the interfacial doping, while unchanged with varied doping at any other atomic layers. In situ photoemission and low energy electron diffraction measurements suggest intrinsic oxygen vacancies at the surface of ultra-thin La0.67Sr0.33MnO3, which are more concentrated in thinner films. Our results show correlation between interfacial doping, oxygen vacancies, and the dead-layer, which can be explained by a simplified electrostatic model.

  1. Hierarchical nanoparticle morphology for platinum supported on SrTiO3 (0 0 1): A combined microscopy and X-ray scattering study

    International Nuclear Information System (INIS)

    Christensen, Steven T.; Lee, Byeongdu; Feng Zhenxing; Hersam, Mark C.; Bedzyk, Michael J.

    2009-01-01

    The morphology of metal nanoparticles supported on oxide substrates plays an important role in heterogeneous catalysis and in the nucleation of thin films. For platinum evaporated onto SrTiO 3 (0 0 1) and vacuum annealed we find an unexpected growth formation of Pt nanoparticles that aggregate into clusters without coalescence. This hierarchical nanoparticle morphology with an enhanced surface-to-volume ratio for Pt is analyzed by grazing incidence small-angle X-ray scattering (GISAXS), X-ray fluorescence (XRF), atomic force microscopy (AFM) and high-resolution scanning electron microscopy (SEM). The nanoparticle constituents of the clusters measure 2-4 nm in size and are nearly contiguously spaced where the average edge-to-edge spacing is less than 1 nm. These particles make up the clusters, which are 10-50 nm in diameter and are spaced on the order of 100 nm apart.

  2. A novel structural expansion in SrTiO3 tuned by electric field and visible-light

    Directory of Open Access Journals (Sweden)

    Y. Li

    2017-05-01

    Full Text Available SrTiO3 is a model perovskite oxide of abundant physical properties, which are closely associated with internal oxygen vacancy (VO defects. Through in situ X-ray diffraction measurements, we observed a remarkable structural expansion in the near-surface region of (001-SrTiO3 induced by an external electric field. By repeated scanning and consistently monitoring the 002 reflections, forming process of the unique structural distortion was obtained and considered to be the results of electromigration and redistribution of VOs. Peculiarly, it was found that a much greater lattice distortion would occur rapidly in SrTiO3 under the illumination of visible light, and be effectively tuned depending on wavelength. We propose that the light effect stems from photo-excitation, which generates extra carriers and remarkably speeds up the diffusion of VOs. This work provides a feasible way towards tuning the kinetics of VOs and structure of SrTiO3 by combined stimuli of electric field and light illumination, yielding novel properties in above films as well as hetero-interface at SrTiO3-based oxide system.

  3. A novel structural expansion in SrTiO3 tuned by electric field and visible-light

    Science.gov (United States)

    Li, Y.; Peng, S. J.; Mao, T. T.; Wang, D. J.; Wu, K. M.; Sun, J. R.; Zhang, J.

    2017-05-01

    SrTiO3 is a model perovskite oxide of abundant physical properties, which are closely associated with internal oxygen vacancy (VO) defects. Through in situ X-ray diffraction measurements, we observed a remarkable structural expansion in the near-surface region of (001)-SrTiO3 induced by an external electric field. By repeated scanning and consistently monitoring the 002 reflections, forming process of the unique structural distortion was obtained and considered to be the results of electromigration and redistribution of VOs. Peculiarly, it was found that a much greater lattice distortion would occur rapidly in SrTiO3 under the illumination of visible light, and be effectively tuned depending on wavelength. We propose that the light effect stems from photo-excitation, which generates extra carriers and remarkably speeds up the diffusion of VOs. This work provides a feasible way towards tuning the kinetics of VOs and structure of SrTiO3 by combined stimuli of electric field and light illumination, yielding novel properties in above films as well as hetero-interface at SrTiO3-based oxide system.

  4. Ferroelectricity of strained SrTiO3 in lithium tetraborate glass-nanocomposite and glass-ceramic

    Science.gov (United States)

    Abdel-Khalek, E. K.; Mohamed, E. A.; Kashif, I.

    2018-02-01

    Glass-nanocomposite (GNCs) sample of the composition [90Li2B4O7-10SrTiO3] (mol %) was prepared by conventional melt quenching technique. The glassy phase and the amorphous nature of the GNCs sample were identified by Differential thermal analysis (DTA) and X-ray diffraction (XRD) studies, respectively. DTA of the GNCs exhibits sharp and broad exothermic peaks which represent the crystallization of Li2B4O7 and SrTiO3, respectively. The tetragonal Li2B4O7 and tetragonal SrTiO3 crystalline phases in glass-ceramic (GC) were identified by XRD and scanning electron microscopic (SEM). The strain tetragonal SrTiO3 phase in GNCs and GC has been confirmed by SEM. The values of crystallization activation energies (Ec1 and Ec2) for the first and second exothermic peaks are equal to 174 and 1452 kJ/mol, respectively. The Ti3+ ions in tetragonal distorted octahedral sites in GNCs were identified by optical transmission spectrum. GNCs and GC samples exhibit broad dielectric anomalies at 303 and 319 K because of strained SrTiO3 ferroelectric, respectively.

  5. Nature of Weak Magnetism in SrTiO3/LaAlO3 Multilayers

    Science.gov (United States)

    Salman, Z.; Ofer, O.; Radovic, M.; Hao, H.; Ben Shalom, M.; Chow, K. H.; Dagan, Y.; Hossain, M. D.; Levy, C. D. P.; MacFarlane, W. A.; Morris, G. M.; Patthey, L.; Pearson, M. R.; Saadaoui, H.; Schmitt, T.; Wang, D.; Kiefl, R. F.

    2012-12-01

    We report the observation of weak magnetism in superlattices of LaAlO3/SrTiO3 using β-detected nuclear magnetic resonance. The spin lattice relaxation rate of Li8 in superlattices with a spacer layers of 8 and 6 unit cells of LaAlO3 exhibits a strong peak near ˜35K, whereas no such peak is observed in a superlattice with spacer layer thickness of 3 unit cells. We attribute the observed temperature dependence to slowing down of weakly coupled electronic moments at the LaAlO3/SrTiO3 interface. These results show that the magnetism at the interface depends strongly on the thickness of the spacer layer, and that a minimal thickness of ˜4-6 unit cells is required for the appearance of magnetism. A simple model is used to determine that the observed relaxation is due to small fluctuating moments (˜0.002μB) in the two samples with a larger LaAlO3 spacer thickness.

  6. Adsorption of UO22+ in surfaces of SrTiO3

    International Nuclear Information System (INIS)

    Ortiz O, H.B.; Ordonez R, E.; Fernandez V, S.M.

    2005-01-01

    The internationally accepted solution in the administration of the high level radioactive residuals is the multi barrier deep geologic storage which should guarantee that do not exist flights neither transfer of residuals to the atmosphere in time periods of at least 10,000 years. In this confinement type exists the interest to study materials that can be used as engineering barriers as well as the diverse interaction phenomena between these and the radionuclides. In this work it is presented the physicochemical characterization and evaluation of the surface properties and of adsorption of U(VI) in form of UO 2 (NO 3 ) 2 on the SrTiO 3 like possible candidate for contention barrier in the deep geologic confinement. The made studies showed that the SrTiO 3 is stable to temperatures between 0 and 800 C. At the same time it could settle down that the maximum sorption percentages are reached to near pH to the isoelectric point, where chemical species prevail in solution of the type UO 2 (X) - . (Author)

  7. Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bark, C [University of Wisconsin, Madison; Sharma, P. [University of Nebraska; Wang, Y. [University of Nebraska; Baek, Seung Hyub [University of Wisconsin, Madison; Lee, S. [University of Wisconsin, Madison; Ryu, S. [University of Wisconsin, Madison; Folkman, C H [University of Wisconsin; Paudel, Tula R [ORNL; Kumar, Amit [ORNL; Kalinin, Sergei V [ORNL; Sokolov, A. [University of Nebraska; Tsymbal, E Y [University of Nebraska, Lincoln; Rzchowski, M [University of Wisconsin; Gruverman, Alexei [ORNL; Eom, Professor Chang-Beom [University of Wisconsin, Madison

    2012-01-01

    Demonstration of a tunable conductivity of the LaAlO3/SrTiO3 interfaces drew significant attention to the development of oxide electronic structures where electronic confinement can be reduced to the nanometer range. While the mechanisms for the conductivity modulation are quite different and include metal insulator phase transition and surface charge writing, generally it is implied that this effect is a result of electrical modification of the LaAlO3 surface (either due to electrochemical dissociation of surface adsorbates or free charge deposition) leading to the change in the twodimensional electron gas (2DEG) density at the LaAlO3/SrTiO3 (LAO/STO) interface. In this paper, using piezoresponse force microscopy we demonstrate a switchable electromechanical response of the LAO overlayer, which we attribute to the motion of oxygen vacancies through the LAO layer thickness. These electrically induced reversible changes in bulk stoichiometry of the LAO layer are a signature of a possible additional mechanism for nanoscale oxide 2DEG control on LAO/STO interfaces.

  8. How Correlated is the FeSe /SrTiO3 System?

    Science.gov (United States)

    Mandal, Subhasish; Zhang, Peng; Ismail-Beigi, Sohrab; Haule, K.

    2017-08-01

    Recent observation of ˜10 times higher critical temperature in a FeSe monolayer compared with its bulk phase has drawn a great deal of attention because the electronic structure in the monolayer phase appears to be different than bulk FeSe. Using a combination of density functional theory and dynamical mean field theory, we find electronic correlations have important effects on the predicted atomic-scale geometry and the electronic structure of the monolayer FeSe on SrTiO3 . The electronic correlations are dominantly controlled by the Se-Fe-Se angle either in the bulk phase or the monolayer phase. But the angle sensitivity increases and the orbital differentiation decreases in the monolayer phase compared to the bulk phase. The correlations are more dependent on Hund's J than Hubbard U . The observed orbital selective incoherence to coherence crossover with temperature confirms the Hund's metallic nature of the monolayer FeSe. We also find electron doping by oxygen vacancies in SrTiO3 increases the correlation strength, especially in the dx y orbital by reducing the Se-Fe-Se angle.

  9. Electronic Structure of Epitaxial Thin Films of the Transparent Conducting Oxide La:BaSnO3 Measured By In-Situ Angle-Resolved Photoemission Spectroscopy

    Science.gov (United States)

    Lochocki, Edward; Paik, Hanjong; Uchida, Masaki; Schlom, Darrell; Shen, Kyle

    Lanthanum-doped barium stannate (La:BaSnO3) is a transparent conducting oxide where single crystals have exhibited unusually high mobility and oxygen stability. Here we present in-situ angle-resolved photoemission (ARPES) measurements of La:BaSnO3 epitaxial films that were co-deposited onto lattice-matched rare-earth scandate substrates by molecular-beam epitaxy (MBE). Density functional theory (DFT) calculations agree well with the observed valence bands and predict a parabolic conduction band. However, the features observed near the Fermi energy (EF) are non-dispersive yet localized in momentum space. This unusual appearance may be the result of quasi-localized charge carriers or out-of-plane momentum broadening. Over long measurement periods, we also observe changes to the valence band and near-EF feature that bear a strong resemblance to the beam-induced two-dimensional electron gases previously reported in SrTiO3 and KTaO3. The origin of these unexpected phenomena and their relationship to the structural and transport properties of these films will be discussed.

  10. Revealing the atomic and electronic structure of a SrTiO3/LaNiO3/SrTiO3 heterostructure interface

    International Nuclear Information System (INIS)

    Zhang, Zaoli; Soltan, S.; Schmid, H.; Habermeier, H.-U.; Keimer, B.; Kaiser, U.

    2014-01-01

    The atomic structures of SrTiO 3 (STO)/LaNiO 3 (LNO)/STO heterostructure interfaces were investigated by spherical aberration-corrected (C S ) (scanning) transmission electron microscopy. Atomic displacement and lattice distortion measurements and electron energy loss spectroscopy (EELS) were used to quantitatively analyze the distortion of the interfacial octahedra and the bond length at the interfaces. Combined with high-resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy analyses, two distinct interfacial atomic terminating layers are unambiguously determined. Ensuing quantitative HRTEM measurements revealed that the Ni-O bond length in the interfacial octahedral is elongated at the bottom interface (–NiO 2 -SrO–). Atomic displacement shows structural relaxation effects when crossing the interfaces and lattice distortions across the interface is more pronounced in LNO than in STO. The Ti/O atomic ratio, La and Ti relative atomic ratio as derived by EELS quantification indicate non-stoichiometric composition at the interfaces. Distinct fine structures of Ti-L 2,3 edge and O-K edge at the bottom and top interfaces are observed. By comparison, we are able to estimate Ti valency at both interfaces. Combining the structural distortions and Ti valency, the polar discontinuity and charge transfer at the interfaces are discussed

  11. Universality of electron mobility in LaAlO3/SrTiO3 and bulk SrTiO3

    Science.gov (United States)

    Trier, Felix; Reich, K. V.; Christensen, Dennis Valbjørn; Zhang, Yu; Tuller, Harry L.; Chen, Yunzhong; Shklovskii, B. I.; Pryds, Nini

    2017-08-01

    Metallic LaAlO3/SrTiO3 (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, ns, is poorly understood. Here, we derive a simple expression for the three-dimensional electron density near the interface, n3 D , as a function of ns and find that the mobility for LAO/STO-based interfaces depends on n3 D in the same way as it does for bulk doped STO. It is known that undoped bulk STO is strongly compensated with N ≃5 ×1018 cm-3 background donors and acceptors. In intentionally doped bulk STO with a concentration of electrons n3 DN , the mobility collapses because scattering happens on n3 D intentionally introduced donors. For LAO/STO, the polar catastrophe which provides electrons is not supposed to provide an equal number of random donors and thus the mobility should be larger. The fact that the mobility is still the same implies that for the LAO/STO, the polar catastrophe model should be revisited.

  12. Enhanced flux pinning in pulsed laser deposited Y Ba 2 Cu 3 O 7-δ : BaTiO 3 nanocomposite thin films

    Science.gov (United States)

    Jha, Alok K.; Khare, Neeraj; Pinto, R.

    2011-10-01

    The effect of incorporation of BaTiO 3(BTO) nanoparticles on the flux pinning properties of pulsed laser deposited YBCO:BTO thin films was studied. Substantial increase in the critical current density ( JC) and the pinning force density ( Fp) of the nanocomposite thin films was observed. At 77 K, and zero applied magnetic field, the value of JC for YBCO and YBCO:BTO (2%) thin films were 2.93 MA/cm 2 and 6.43 MA/cm 2, respectively. At the same temperature and an applied magnetic field of 4 T, the value of JC increases from 3.6×10 4 A/cm 2 for YBCO thin film to 2.7×10 5 A/cm 2 for YBCO:BTO (2%) nanocomposite thin film. The study of temperature and field dependence of J of YBCO and YBCO:BTO thin films indicates similar type of pinning. The lattice mismatch between YBCO and BTO seems to introduce more defects resulting in the improvement of flux pinning properties.

  13. Electric field effects in graphene/LaAlO3/SrTiO3 heterostructures and nanostructures

    Directory of Open Access Journals (Sweden)

    Mengchen Huang

    2015-06-01

    Full Text Available We report the development and characterization of graphene/LaAlO3/SrTiO3 heterostructures. Complex-oxide heterostructures are created by pulsed laser deposition and are integrated with graphene using both mechanical exfoliation and transfer from chemical-vapor deposition on ultraflat copper substrates. Nanoscale control of the metal-insulator transition at the LaAlO3/SrTiO3 interface, achieved using conductive atomic force microscope lithography, is demonstrated to be possible through the graphene layer. LaAlO3/SrTiO3-based electric field effects using a graphene top gate are also demonstrated. The ability to create functional field-effect devices provides the potential of graphene-complex-oxide heterostructures for scientific and technological advancement.

  14. Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO3

    DEFF Research Database (Denmark)

    Trier, Felix; Prawiroatmodjo, Guenevere E. D. K.; Zhong, Zhicheng

    2016-01-01

    The two-dimensional metal forming at the interface between an oxide insulatorand SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide...... heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO3/SrTiO3 heterostructure, which exhibits both highelectron mobility exceeding 10, 000 cm2/V s and low carrier density on the order of ~1012 cm-2....... Along with unambiguous Shubnikov-de Haasoscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional subbands. This provides new insight into the electronic structure of conducting oxide...

  15. Dielectric and piezoelectric properties of lead-free (Bi,Na)TiO3-based thin films

    Science.gov (United States)

    Abazari, M.; Safari, A.; Bharadwaja, S. S. N.; Trolier-McKinstry, S.

    2010-02-01

    Dielectric and piezoelectric properties of morphotropic phase boundary (Bi,Na)TiO3-(Bi,K)TiO3-BaTiO3 epitaxial thin films deposited on SrRuO3 coated SrTiO3 substrates were reported. Thin films of 350 nm thickness exhibited small signal dielectric permittivity and loss tangent values of 750 and 0.15, respectively, at 1 kHz. Ferroelectric hysteresis measurements indicated a remanent polarization value of 30 μC/cm2 with a coercive field of 85-100 kV/cm. The thin film transverse piezoelectric coefficient (e31,f) of these films after poling at 600 kV/cm was found to be -2.2 C/m2. The results indicate that these BNT-based thin films are a potential candidate for lead-free piezoelectric devices.

  16. Scanning probe manipulation of magnetism at the LaAlO3/SrTiO3 heterointerface.

    Science.gov (United States)

    Kalisky, Beena; Bert, Julie A; Bell, Christopher; Xie, Yanwu; Sato, Hiroki K; Hosoda, Masayuki; Hikita, Yasuyuki; Hwang, Harold Y; Moler, Kathryn A

    2012-08-08

    Manipulation of magnetism is a longstanding goal of research in exotic materials. In this work, we demonstrate that the small ferromagnetic patches in LaAlO(3)/SrTiO(3) heterostructures can be dramatically changed by in situ contact of a scanning probe. Our results provide a platform for manipulation of small magnets through either a strong magneto-elastic coupling or sensitivity to surface modification. The ability to locally control magnetism is particularly interesting due to the presence of superconductivity with strong spin-orbit coupling in LaAlO(3)/SrTiO(3).

  17. Tunable bilayer two-dimensional electron gas in LaAlO3/SrTiO3 superlattices

    International Nuclear Information System (INIS)

    Ma, H. J. Harsan; Annadi, A.; Zeng, S. W.; Ariando; Huang, Z.; Lü, W. M.; Wong, L. M.; Wang, S. J.; Venkatesan, T.

    2014-01-01

    We report magnetotransport properties of double heterointerfaces in LaAlO 3 /SrTiO 3 /LaAlO 3 /SrTiO 3 (001) (LAO/STO/LAO/STO). A strong nonlinearity in the Hall resistivity is found when the temperature is below 80 K. This effect is attributed to multichannel conduction of interfacial charges generated in double heterostructures of LAO/STO where two-dimensional electron gas (2DEG) is produced. The multichannel conduction is confirmed by back gating modulation of Hall effect. Our result suggests the possibility to achieve coupled bilayer 2DEG layers in LAO/STO superlattices.

  18. Visible-light-enhanced gating effect at the LaAlO3/SrTiO3 interface

    DEFF Research Database (Denmark)

    Lei, Y.; Li, Y.; Chen, Yunzhong

    2014-01-01

    Electrostatic gating field and light illumination are two widely used stimuli for semiconductor devices. Via capacitive effect, a gate field modifies the carrier density of the devices, while illumination generates extra carriers by exciting trapped electrons. Here we report an unusual illumination......-enhanced gating effect in a two-dimensional electron gas at the LaAlO3/SrTiO3 interface, which has been the focus of emergent phenomena exploration. We found that light illumination decreases, rather than increases, the carrier density of the gas when the interface is negatively gated through the SrTiO3 layer...

  19. Preparation of Compensation Ions Codoped SrTiO3:Pr3+ Red Phosphor with the Sol-Gel Method and Study of Its Luminescence Enhancement Mechanism

    Directory of Open Access Journals (Sweden)

    Dan Guo

    2014-01-01

    Full Text Available SrTiO3:Pr3+ is the most representative titanate matrix red phosphor for field emission display (FED. The red luminous efficiency of SrTiO3:Pr3+ will be greatly improved after the compensation ions codoping, so SrTiO3:Pr3+ red phosphor has been a research focus at home and abroad. SrTiO3:Pr3+, SrTiO3:Pr3+, Mg2+, and SrTiO3:Pr3+, Al3+ phosphors are synthesized by a new sol-gel method. Crystal structure, spectral characteristics, and luminescence enhancement mechanism of the sample were studied by XRD and PL spectra. The results showed that after co-doped, SrTiO3:Pr3+ phosphor is single SrTiO3 cubic phase, the main emission front is located at 614 nm, corresponding to Pr3+ ions 1D2→3H4 transition emission. SrTiO3:Pr3+, Mg2+ and SrTiO3:Pr3+, Al3+ phosphor luminescence intensity is enhanced, but the main luminescence mechanism is not changed. Acceptor impurity x = Mg2+, Al3+ will replace Ti bit after being doped into the crystal lattice to form XTi- charge compensation corresponding defect centers PrSr+ to reduce the demand of Sr2+ or Ti3+ vacancy. While Sr-doped Pr will make lattice distortion and transition energy of 4f-5d is very sensitive to crystal electric field changes around Pr atom. Doping different impurities will make electric field distribution around the icon have a different change. It increases energy transfer of 4f-5d transition and improves the luminous intensity of SrTiO3:Pr3+ red phosphor.

  20. Interface effects on the electronic transport properties in highly epitaxial LaBaCo2O(5.5+δ) films.

    Science.gov (United States)

    Ma, C R; Liu, M; Liu, J; Collins, G; Zhang, Y M; Wang, H B; Chen, C L; Lin, Y; He, J; Jiang, J C; Meletis, E I; Jacobson, A J

    2014-02-26

    Single-crystalline perovskite LaBaCo2O5.5+δ thin films were grown on a (110) NdGaO3 single-crystal substrate in order to systematically investigate the effect of lattice mismatch on the electrical transport properties in comparison to the films on LaAlO3, SrTiO3, and MgO substrates. Microstructure studies reveal that all of the LaBaCo2O5.5+δ films are of excellent quality with atomically sharp interface structures. The electrical and magnetic transport property studies indicate that the resistivity, magnetoresistance, and magnetic moment of the film are very sensitive to the substrate materials because of the lattice mismatch/interface strain. The Curie temperature, however, is almost independent of the strain imposed by the substrate, probably because of the strong coupling between the nanodomain boundary and interface strain.

  1. Interface properties of SrTiO3-based heterostructures studied by spectroscopy and high-resolution microscopy

    International Nuclear Information System (INIS)

    Pfaff, Florian Georg

    2017-01-01

    Oxide heterostructures can exhibit a variety of unexpected electronic and magnetic phenomena at their interfaces. A prominent example is the interface in LaAlO 3 /SrTiO 3 heterostructures where a two-dimensional electron system (2DES) forms if the LaAlO 3 thickness equals or exceeds a critical thickness of four unit cells. Similar to LaAlO 3 /SrTiO 3 an interface 2DES above a critical overlayer thickness has been observed in γ-Al 2 O 3 /SrTiO 3 . However, the electron mobility as well as the sheet carrier density exceed those of LaAlO 3 /SrTiO 3 heterostructures by more than one order of magnitude. This thesis is concerned with the growth and the characterization of these two types of interface systems with the main focus on the analysis of the physical properties at the interface and the understanding of their leading mechanisms. In regard to the sample fabrication it is demonstrated in the present thesis that the hitherto established growth routine of LaAlO 3 /SrTiO 3 by pulsed laser deposition has to be altered and optimized for the growth of γ-Al 2 O 3 . It is shown that growth monitoring by analyzing reflection high energy electron diffraction (RHEED) intensity oscillations is hindered by the formation of surface wave resonances. In order to avoid this effect, a modified growth geometry has to be used whereby also in this heterostructure systems monitoring of the layer-by-layer growth of γ-Al 2 O 3 /SrTiO 3 heterostructures by electron diffraction can be achieved. A so-called electronic reconstruction is discussed as the possible driving mechanism for the 2DES formation in LaAlO 3 /SrTiO 3 . In this scenario, the built-up potential within the polar LaAlO 3 overlayer is compensated by a charge transfer from the sample surface to the top most layers of the non-polar SrTiO 3 substrate. Furthermore, the properties of these heterostructures strongly depend on the used growth conditions. In the present work, for instance, a significant increase in the charge carrier concentration as well as the 2DES spatial extension can be observed for samples grown at very low oxygen pressures, which is related to the creation of oxygen vacancies in SrTiO 3 substrate. It is microscopically shown for the first time that sharp interfaces with a very low density of defects can also be grown at very low oxygen partial pressures. In addition, no significant effect of oxygen vacancies on specific structural properties is seen. Furthermore, a detailed analysis of the atomic spacing reveales a lattice distortion within the LaAlO 3 film which shows a significant dependence on the used growth parameters and, supported by density functional theory, points towards a complex interplay of electronic reconstruction, surface oxygen vacancies and lattice distortions as the driving mechanism for the 2DES formation. Beside the study of the structural properties of the interface in LaAlO 3 /SrTiO 3 heterostructures by means of transmission electron microscopy, the electronic structure of the 2DES is analyzed by resonant inelastic X-ray scattering (RIXS) measurements which show clear indications for localized charge carriers below the critical thickness for conductivity of four unit cells. Moreover, a Raman- and a fluorescence-like signal can be identified by excitation energy dependent RIXS and attributed to the electronic character of the intermediate state. Similar results are obtained on γ-Al 2 O 3 /SrTiO 3 heterostructures which fortifies this interpretation and could be a hint for a similar ground state in both heterostructures and interface magnetism also to be present in this system. By using resonant photoelectron spectroscopy the Ti 3d valence electrons can directly be observed and analyzed. Comparative measurements on LaAlO 3 /SrTiO 3 and γ-Al 2 O 3 /SrTiO 3 indicate the existence of different types of electronic states with Ti 3d character in both systems which can be attributed to mobile carriers forming the 2DES and carriers localized in states adjacent to oxygen vacancies. By analyzing the resonance behavior of the electronic states and their relative intensities and spectral shape substantial differences are revealed which point to a different mechanism at play for forming the 2DES in LaAlO 3 /SrTiO 3 and γ-Al 2 O 3 /SrTiO 3 . These observations are discussed in terms of the influence of oxygen vacancies on the two interface systems. Additionally, momentum-resolved measurements are performed to resolve the metallic states at the chemical potential and to map out the Fermi surface of LaAlO 3 /SrTiO 3 and γ-Al 2 O 3 /SrTiO 3 . Here, significantly different intensity distributions in k-space are observed and discussed with respect to matrix element effects while the results can most likely be ascribed to photoelectron diffraction due to the different crystal structure of the overlayer material.

  2. Near-infrared luminescence in perovskite BaSnO3 epitaxial films

    Science.gov (United States)

    Takashima, Hiroshi; Inaguma, Yoshiyuki

    2017-08-01

    Strong near-infrared luminescence under ultraviolet excitation was obtained in epitaxially grown BaSnO3 perovskite films. The films were grown on SrTiO3 (001) substrates by pulsed-laser deposition, and the crystallinity of the epitaxial growth was confirmed by X-ray diffraction and reflected high-energy electron diffraction. Near-infrared luminescence of the as-grown film showed a broad emission peak centered at 905 nm. The transparencies of the double-side-polished substrate with and without the film were about 70% at around 550 nm, suggesting that the transparency of the film itself is close to 100%. The preparation of epitaxial thin films with a strong near-infrared luminescence and a high transparency may open up applications for wavelength conversion in solar cells for realizing a higher efficiency.

  3. Antiferromagnetism of two-dimensional electronic gas on light-irradiated SrTiO3 and at LaAlO3/SrTiO3 interfaces

    Science.gov (United States)

    Gor'kov, L. P.

    2015-06-01

    To gain an insight into the origin of tunable two-dimensional (2D) electronic liquid at the interfaces of transition-metal oxides, we address properties of a conducting layer on the light-irradiated surfaces of SrTiO3; the energy spectrum of the latter is known and consists of the titanium dxz/dyz and dxy bands. Recently, Santander-Syro et al (2014 Nature Mater. 13 1085) revealed that the dxy bands actually comprise two chiral branches with the Kramers degeneracy at the zone center lifted in the absence of a magnetic moment. We suggest that interacting electrons on the irradiated SrTiO3 go over into a magnetic phase as the result of one of the instabilities of the 2D Fermi liquid with exchange interactions, and point out the concrete antiferromagnetic order parameter. Large energy scales of the order of Fermi energy ∼0.1 eV inherent in this mechanism warrant stability of the magnetic ground state against ever-present effects of disorder. Arguments are given that electrons at the irradiated SrTiO3 surface and at the LaAlO3/SrTiO3 interfaces undergo a kind of first-order transformation into one and the same phase of the 2D electronic Fermi liquid with reduced magnetic symmetry.

  4. Theoretical models of Rashba spin splitting in asymmetric SrTiO3-based heterostructures

    Science.gov (United States)

    van Heeringen, L. W.; McCollam, A.; de Wijs, G. A.; Fasolino, A.

    2017-04-01

    Rashba spin splitting in two-dimensional (2D) semiconductor systems is generally calculated in a k .p Luttinger-Kohn approach where the spin splitting due to asymmetry emerges naturally from the bulk band structure. In recent years, several new classes of 2D systems have been discovered where electronic correlations are believed to have an important role. In these correlated systems, the effects of asymmetry leading to Rashba splitting have typically been treated phenomenologically. We compare these two approaches for the case of 2D electron systems in SrTiO3-based heterostructures, and find that the two models produce fundamentally different behavior in regions of the Brillouin zone that are particularly relevant for magnetotransport. Our results demonstrate the importance of identifying the correct approach in the quantitative interpretation of experimental data, and are likely to be relevant to a range of 2D systems in correlated materials.

  5. Carrier density independent scattering rate in SrTiO3-based electron liquids.

    Science.gov (United States)

    Mikheev, Evgeny; Raghavan, Santosh; Zhang, Jack Y; Marshall, Patrick B; Kajdos, Adam P; Balents, Leon; Stemmer, Susanne

    2016-02-10

    We examine the carrier density dependence of the scattering rate in two- and three-dimensional electron liquids in SrTiO3 in the regime where it scales with T(n) (T is the temperature and n ≤ 2) in the cases when it is varied by electrostatic control and chemical doping, respectively. It is shown that the scattering rate is independent of the carrier density. This is contrary to the expectations from Landau Fermi liquid theory, where the scattering rate scales inversely with the Fermi energy (EF). We discuss that the behavior is very similar to systems traditionally identified as non-Fermi liquids (n density-independent scattering rates have been observed. The results indicate that the applicability of Fermi liquid theory should be questioned for a much broader range of correlated materials and point to the need for a unified theory.

  6. Enhanced carrier density in Nb-doped SrTiO3 thermoelectrics

    KAUST Repository

    Ozdogan, K.

    2012-03-08

    We study epitaxial SrTiO3 interfaced with Nb-doped SrTi1-x Nb x O3 (x = 0, 0.125, 0.25, 0.375, and 0.5) by full-potential density functional theory. From the electronic band structures obtained by our ab-initio calculations we determine the dependence of the induced metallicity on the Nb concentration. We obtain a monotonous increase of the carrier density with the Nb concentration. The results are confirmed by experiments for SrTi0.88Nb0.12O3 and SrTi0.8Nb0.2O3, demonstrating the predictive power and limitations of our theoretical approach. We also show that the Seebeck coefficient decreases monotonously with increasing temperature.

  7. Ion channeling study of lattice distortions in chromium-doped SrTiO3 crystals

    Czech Academy of Sciences Publication Activity Database

    Lavrentiev, Vasyl; Vacík, Jiří; Dejneka, Alexandr; Trepakov, Vladimír; Jastrabík, Lubomír

    2013-01-01

    Roč. 55, č. 7 (2013), s. 1431-1437 ISSN 1063-7834 R&D Projects: GA ČR(CZ) GAP107/11/1856; GA ČR(CZ) GBP108/12/G108; GA ČR GAP108/12/1941 Grant - others:GA MŠk(CZ) ED2.1.00/03.0058 Program:ED Institutional support: RVO:68378271 ; RVO:61389005 Keywords : ion channeling * lattice distortions * SrTiO3 Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 0.782, year: 2013 http://link.springer.com/article/10.1134%2FS1063783413070202

  8. Nonthermal effects in photostimulated solid state reaction of Mn doped SrTiO3

    Science.gov (United States)

    Daraselia, D.; Japaridze, D.; Jibuti, Z.; Shengelaya, A.; Müller, K. A.

    2017-04-01

    The effect of a photostimulated solid state reaction was investigated in Mn doped SrTiO3 samples. Light irradiation was performed by either halogen or UV lamps in order to study the effect of the spectral composition, and the results were compared with samples prepared at the same temperatures in a conventional furnace. The obtained samples were studied by X-ray diffraction for structural characterization and by Electron Paramagnetic Resonance, which provides microscopic information about the local environment as well as the valence state of Mn ions. It was found that light irradiation significantly enhances the solid state reaction rate compared to synthesis in the conventional furnace. Moreover, it was observed that UV lamp irradiation is much more effective compared to halogen lamps. This indicates that the absorption of light with energy larger than the materials band gap plays an important role and points towards the nonthermal mechanism of the photostimulated solid state reaction.

  9. La/Sm/Er Cation Doping Induced Thermal Properties of SrTiO3 Perovskite.

    Science.gov (United States)

    Rittiruam, Meena; Seetawan, Tosawat; Yokhasing, Sirakan; Matarat, Korakot; Bach Thang, Phan; Kumar, Manish; Han, Jeon Geon

    2016-09-06

    The La/Sm/Er cations with different radii doping SrTiO3 (STO) as model Sr0.9R0.1TiO3 (R = La, Sm, Er) were designed to investigate structural characteristics and thermal properties by the molecular dynamics simulation with the Green-Kubo relation at 300-2000 K. The structural characteristics were composed of lattice constant, atoms excursion, and pair correlation function (PCF). The thermal properties consisted of heat capacity and thermal conductivity. The lattice constant of R-doped exhibited less than the STO at 300-1100 K and more than STO at 1500-2000 K, which was encouraged by atom excursion and PCF. The thermal properties was compared with literature data at 300-1100 K. In addition, the thermal properties at 1100-2000 K were predicted. It highlights that thermal conductivity tends to decrease at high temperature, due to perturbation of La, Sm, and Er, respectively.

  10. Macroscopic Polarization from Antiferrodistortive Cycloids in Ferroelastic SrTiO3

    Science.gov (United States)

    Schiaffino, Andrea; Stengel, Massimiliano

    2017-09-01

    Based on a first-principles based multiscale approach, we study the polarity P of ferroelastic twin walls in SrTiO3 . In addition to flexoelectricity, which was pointed out before, we identify two new mechanisms that crucially contribute to P : a direct "rotopolar" coupling to the gradients of the antiferrodistortive oxygen tilts, and a trilinear coupling that is mediated by the antiferroelectric displacement of the Ti atoms. Remarkably, the rotopolar coupling presents a strong analogy to the mechanism that generates a spontaneous polarization in cycloidal magnets. We show how this similarity allows for a breakdown of macroscopic inversion symmetry (and therefore a macroscopic polarization) in a periodic sequence of parallel twins. These results open new avenues towards engineering pyroelectricity or piezoelectricity in nominally nonpolar ferroic materials.

  11. Macroscopic Polarization from Antiferrodistortive Cycloids in Ferroelastic SrTiO_{3}.

    Science.gov (United States)

    Schiaffino, Andrea; Stengel, Massimiliano

    2017-09-29

    Based on a first-principles based multiscale approach, we study the polarity P of ferroelastic twin walls in SrTiO_{3}. In addition to flexoelectricity, which was pointed out before, we identify two new mechanisms that crucially contribute to P: a direct "rotopolar" coupling to the gradients of the antiferrodistortive oxygen tilts, and a trilinear coupling that is mediated by the antiferroelectric displacement of the Ti atoms. Remarkably, the rotopolar coupling presents a strong analogy to the mechanism that generates a spontaneous polarization in cycloidal magnets. We show how this similarity allows for a breakdown of macroscopic inversion symmetry (and therefore a macroscopic polarization) in a periodic sequence of parallel twins. These results open new avenues towards engineering pyroelectricity or piezoelectricity in nominally nonpolar ferroic materials.

  12. Hydrogenated vacancies and hidden hydrogen in SrTiO3

    Science.gov (United States)

    Varley, J. B.; Janotti, A.; Van de Walle, C. G.

    2014-02-01

    We investigate the stability of O, Ti, and Sr vacancies in SrTiO3 and their interactions with hydrogen impurities. Based on density functional calculations with a hybrid functional, we analyze formation energies, binding energies, and H-related vibrational modes. We find that interstitial hydrogen (Hi+) and substitutional hydrogen on an oxygen site (HO) both act as shallow donors and are likely to contribute to unintentional n-type conductivity. Hydrogen can also bind to Ti vacancies in the form of (VTi-H)-3 and (VTi-2H)-2 complexes. Sr vacancies can form (VSr-H)- or accommodate an H2 molecule in the form of (VSr-H2)-2 complex. The latter provides an explanation for the "hidden" hydrogen recently observed in annealing experiments [M. C. Tarun and M. D. McCluskey, J. Appl. Phys. 109, 063706 (2011), 10.1063/1.3561867].

  13. Octahedral rotations in strained LaAlO3/SrTiO3 (001 heterostructures

    Directory of Open Access Journals (Sweden)

    T. T. Fister

    2014-02-01

    Full Text Available Many complex oxides display an array of structural instabilities often tied to altered electronic behavior. For oxide heterostructures, several different interfacial effects can dramatically change the nature of these instabilities. Here, we investigate LaAlO3/SrTiO3 (001 heterostructures using synchrotron x-ray scattering. We find that when cooling from high temperature, LaAlO3 transforms from the Pm3¯m to the Imma phase due to strain. Furthermore, the first 4 unit cells of the film adjacent to the substrate exhibit a gradient in rotation angle that can couple with polar displacements in films thinner than that necessary for 2D electron gas formation.

  14. Electrochemical characterization and redox behavior of Nb-doped SrTiO3

    DEFF Research Database (Denmark)

    Blennow Tullmar, Peter; Kammer Hansen, Kent; Wallenberg, L. Reine

    2009-01-01

    Sr-vacancy compensated Nb-doped SrTiO3 with the nominal composition Sr0.94Ti0.9Nb0.1O3 has been evaluated as a solid oxide fuel cell (SOFC) anode material in terms of redox stability and electrochemical properties. Sr0.94Ti0.9Nb0.1O3 has been synthesized with a recently developed modified glycine......-nitrate process. The phase purity and redox behavior have been analyzed with XRD and TGA. The electrochemical properties of Sr0.94Ti0.9Nb0.1O3 and a composite electrode of Sr0.94Ti0.9Nb0.1O3/YSZ have been investigated by electrochemical impedance spectroscopy (EIS) on cone shaped electrodes and on electrodes...

  15. Deposition of SrTiO3 films by electrophoresis with thickness and particle size control

    International Nuclear Information System (INIS)

    Junior, W.D.M.; Pena, A.F.V.; Souza, A.E.; Santos, G.T.A.; Teixeira, S.R.; Senos, A.M.R.; Longo, E.

    2012-01-01

    The SrTiO3 (ST) is a material that exhibits semiconducting characteristics and interesting electrical properties. In room temperature has a structure of high cubic symmetry. The size of the crystallites of this material directly influences this symmetry, changing its network parameters. ST nanoparticles are obtained by hydrothermal method assisted by microwave (MAH). ST films are prepared by electrophoretic deposition (EPD). Approximately 1 g of the powder is dissolved in 100 ml of acetone and 1.5 ml of triethanolamine. The stainless steel substrates are arranged horizontally in the solution. The depositions are performed for 1-10 min and subjected to a potential difference of 20-100 V. The films were characterized by x-ray diffraction (XRD) and atomic force microscopy (AFM). The characterizations show that it is possible to control both the thickness and size of the crystallites of the film depending on the deposition parameters adopted. (author)

  16. The effect of Rhδ+ dopant in SrTiO3 on the active oxidation state of co-catalytic Pt nanoparticles in overall water splitting

    NARCIS (Netherlands)

    Zoontjes, M.G.C.; Han, Kai; Han, K.; Huijben, Mark; van der Wiel, Wilfred Gerard; Mul, Guido

    2016-01-01

    We report on the oxidation state of Pt nanoparticles when deposited on SrTiO3 or Rh-doped SrTiO3 under realistic solar water-splitting conditions. The oxidation state was investigated using state-of-the-art analysis of the reaction in a continuously stirred tank reactor (CSTR) connected to a micro

  17. Epitaxial growth and properties of YBaCuO thin films

    International Nuclear Information System (INIS)

    Geerk, J.; Linker, G.; Meyer, O.

    1989-08-01

    The growth quality of YBaCuO thin films deposited by sputtering on different substrates (Al 2 O 3 , MgO, SrTiO 3 , Zr(Y)O 2 ) has been studied by X-ray diffraction and channeling experiments as a function of the deposition temperature. Besides the substrate orientation, the substrate temperature is the parameter determining whether films grow in c-, a-, (110) or mixed directions. Epitaxial growth correlates with high critical current values in the films of up to 5.5x10 6 A/cm 2 at 77 K. Ultrathin films with thicknesses down to 2 nm were grown revealing three-dimensional superconducting behaviour. Films on (100) SrTiO 3 of 9 nm thickness and below are partially strained indicating commensurate growth. From the analysis of the surface disorder 1 displaced Ba atom per Ba 2 Y row was obtained indicating that the disordered layer thickness is about 0.6 nm. Tunnel junctions fabricated on these films reveal gap-like structures near ±16 mV and ±30 mV. (orig.) [de

  18. Controlled Confinement of Half-metallic 2D Electron Gas in BaTiO3/Ba2FeReO6/BaTiO3 Heterostructures: A First-principles Study

    Science.gov (United States)

    Saha-Dasgupta, Tanusri; Baidya, Santu; Waghmare, Umesh; Paramekanti, Arun

    Using density functional theory calculations, we establish that the half-metallicity of bulk Ba2FeReO6 survives down i to 1 nm thickness in BaTiO3/Ba2FeReO6/BaTiO3 heterostructures grown along the (001) and (111) directions. The confinement of the two-dimensional (2D) electron gas in this quantum well structure arises from the suppressed hybridization between Re/Fe d states and unoccupied Ti d states, and it is further strengthened by polar fields for the (111) direction. This mechanism, distinct from the polar catastrophe, leads to an order of magnitude stronger confinement of the 2D electron gas than that at the LaAlO3/SrTiO3 interface. We further show low-energy bands of (111) heterostructure display nontrivial topological character. Our work opens up the possibility of realizing ultra-thin spintronic devices. Journal Ref: Phys. Rev. B 92, 161106(R) (2015) S.B. and T.S.D thank Department of Science and Technology, India for the support through Thematic Unit of Excellence. AP was supported by NSERC (Canada).

  19. Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties

    KAUST Repository

    Mehdizadeh Dehkordi, Arash

    2015-08-15

    We demonstrate a novel synthesis strategy for the preparation of Pr-doped SrTiO3 ceramics via a combination of solid state reaction and spark plasma sintering techniques. Polycrystalline ceramics possessing a unique morphology can be achieved by optimizing the process parameters, particularly spark plasma sintering heating rate. The phase and morphology of the synthesized ceramics were investigated in detail using X-ray diffraction, scanning electron microcopy and energy-dispersive X-ray spectroscopy It was observed that the grains of these bulk Pr-doped SrTiO3 ceramics were enhanced with Pr-rich grain boundaries. Electronic and thermal transport properties were also investigated as a function of temperature and doping concentration Such a microstructure was found to give rise to improved thermoelectric properties. Specifically, it resulted in a significant improvement in carrier mobility and the thermoelectric power factor. Simultaneously, it also led to a marked reduction in the thermal conductivity. As a result, a significant improvement (> 30%) in the thermoelectric figure of merit was achieved for the whole temperature range over all previously reported maximum values for SrTiO3-based ceramics. This synthesis demonstrates the steps for the preparation of bulk polycrystalline ceramics of non-uniformly Pr-doped SrTiO3.

  20. Thermally excited multiband conduction in LaAlO3/SrTiO3 heterostructures exhibiting scattering

    NARCIS (Netherlands)

    Guduru, V.K.; McCollam, A.; Jost, A.; Wenderich, Sander; Hilgenkamp, H.; Maan, J.C.; Brinkman, Alexander; Zeitler, U.

    2013-01-01

    Magnetotransport measurements of charge carriers at the interface of a LaAlO 3 /SrTiO 3 heterostructure with 26 unit cells of LaAlO 3 show Hall resistance and magnetoresistance which at low and high temperatures is described by a single channel of electronlike charge carriers. At intermediate

  1. Electrical transport across Au/Nb : SrTiO3 Schottky interface with different Nb doping

    NARCIS (Netherlands)

    Rana, K. G.; Khikhlovskyi, V.; Banerjee, T.

    2012-01-01

    We have investigated electron transport in Nb doped SrTiO3 single crystals for two doping densities. We find that the resistivity and mobility are temperature dependent in both whereas the carrier concentration is almost temperature invariant. We rationalize this using the hydrogenic theory for

  2. Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties.

    Science.gov (United States)

    Mehdizadeh Dehkordi, Arash; Bhattacharya, Sriparna; Darroudi, Taghi; Zeng, Xiaoyu; Alshareef, Husam N; Tritt, Terry M

    2015-08-15

    We demonstrate a novel synthesis strategy for the preparation of Pr-doped SrTiO3 ceramics via a combination of solid state reaction and spark plasma sintering techniques. Polycrystalline ceramics possessing a unique morphology can be achieved by optimizing the process parameters, particularly spark plasma sintering heating rate. The phase and morphology of the synthesized ceramics were investigated in detail using X-ray diffraction, scanning electron microcopy and energy-dispersive X-ray spectroscopy. It was observed that the grains of these bulk Pr-doped SrTiO3 ceramics were enhanced with Pr-rich grain boundaries. Electronic and thermal transport properties were also investigated as a function of temperature and doping concentration. Such a microstructure was found to give rise to improved thermoelectric properties. Specifically, it resulted in a significant improvement in carrier mobility and the thermoelectric power factor. Simultaneously, it also led to a marked reduction in the thermal conductivity. As a result, a significant improvement (> 30%) in the thermoelectric figure of merit was achieved for the whole temperature range over all previously reported maximum values for SrTiO3-based ceramics. This synthesis demonstrates the steps for the preparation of bulk polycrystalline ceramics of non-uniformly Pr-doped SrTiO3.

  3. The atomic surface structure of SrTiO3 (001) studied with synchrotron X-rays

    NARCIS (Netherlands)

    Vonk, V.; Konings, S.; van Hummel, G.J.; Harkema, Sybolt; Graafsma, H

    2005-01-01

    The atomic surface structure of single terminated SrTiO3(0 0 1) (1 × 1) is investigated employing surface X-ray diffraction. In order to obtain these surfaces a special treatment is needed consisting of chemical etching and annealing. Since this is done in an aqueous and subsequently oxygen

  4. Stability and electronic structure studies of LaAlO3/SrTiO3 (110) heterostructures

    International Nuclear Information System (INIS)

    Du Yan-Ling; Wang Chun-Lei; Li Ji-Chao; Xu Pan-Pan; Zhang Xin-Hua; Liu Jian; Su Wen-Bin; Mei Liang-Mo

    2014-01-01

    The first-principles calculations are employed to investigate the stability, magnetic, and electrical properties of the oxide heterostructure of LaAlO 3 /SrTiO 3 (110). By comparing their interface energies, it is obtained that the buckled interface is more stable than the abrupt interface. This result is consistent with experimental observation. At the interface of LaAlO 3 /SrTiO 3 (110) heterostructure, the Ti—O octahedron distortions cause the Ti t 2g orbitals to split into the two-fold degenerate d xz /d yz and nondegenerate d xy orbitals. The former has higher energy than the latter. The partly filled two-fold degenerate t 2g orbitals are the origin of two-dimensional electron gas, which is confined at the interface. Lattice mismatch between LaAlO 3 and SrTiO 3 leads to ferroelectric-like lattice distortions at the interface, and this is the origin of spin-splitting of Ti 3d electrons. Hence the magnetism appears at the interface of LaAlO 3 /SrTiO 3 (110). (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Synthesis and Characterization of BaFe12O19 Thin Films Using Suspension of Nano Powders

    Science.gov (United States)

    Salemizadeh, Saman; Seyyed Ebrahimi, S. A.

    BaM thin films have been synthesized by dispersing the dried gel nano powders prepared by Sol-Gel method. The solution was made by dissolving iron nitrate Fe(NO3).9H2O, barium nitrate Ba(NO3)2 and citric acid in deyonized water and methanol. This sol was slowly evaporated until a dried gel was formed. This dried gel was then added to ethylene glycol. The final solution was vigorously shaken and mixed in ultrasonic cleaner for 30 min to disperse particles sufficiently. Then the prepared solution spin coated on Si(110) substrate. The obtained thin films were dried at 120 °C and then calcined at 900 °C for 1 h. The films were characterized using X-ray diffraction (XRD) and vibrating sample magnetometer (VSM).

  6. Epitaxial thin-film growth of Ruddlesden-Popper-type Ba{sub 3}Zr{sub 2}O{sub 7} from a BaZrO{sub 3} target by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Butt, Shariqa Hassan; Rafique, M.S.; Siraj, K.; Latif, A.; Afzal, Amina [University of Engineering and Technology, Laser and Optronics Centre, Department of Physics, Lahore (Pakistan); Awan, M.S. [Ibn-e-Sina Institute of Science and Technology (ISIT), Islamabad (Pakistan); Bashir, Shazia [Government College University, Centre for Advanced Studies in Physics, Lahore (Pakistan); Iqbal, Nida [Universiti Teknologi Malaysia, Medical Devices and Technology Group (MEDITEG), Faculty of Biosciences and Medical Engineering, Johor Bahru, Johor (Malaysia)

    2016-07-15

    Ruddlesden-Popper Ba{sub 3}Zr{sub 2}O{sub 7} thin films have been synthesized via pulsed laser deposition (PLD) technique. The optimization of deposition parameters in PLD enables the formation of thin film of metastable Ba{sub 3}Zr{sub 2}O{sub 7} phase from BaZrO{sub 3} target. In order to see the post-annealing effects on the structural and optical properties, the deposited Ba{sub 3}Zr{sub 2}O{sub 7} thin films were annealed at 500, 600 and 800 C. X-ray diffraction (XRD) reveals the formation of Ba{sub 3}Zr{sub 2}O{sub 7} phase with tetragonal structure. The changes in the surface of the deposited films were analysed by FE-SEM and AFM. The thin film post-annealed at 500 C exhibited the best structural, optical and surface properties. Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The XPS results show that Ba, Zr and O exist mainly in the form of Ba{sub 3}Zr{sub 2}O{sub 7} Ruddlesden-Popper-type perovskite structure. (orig.)

  7. Thermoelectric study of Y-Ba-Cu-O thin film on MgO substrate prepared by resistive evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Pekala, M. (Dept. of Chemistry, Univ. of Warsaw (Poland)); Pekala, K. (Inst. of Physics, Warsaw Technical Univ. (Poland)); Lapsker, I. (Center for Theoretical Education Holon (Israel)); Verdyan, A. (Center for Theoretical Education Holon (Israel)); Azoulay, J. (Center for Theoretical Education Holon (Israel))

    1993-04-20

    Thermoelectric measurements were carried out on Y-Ba-Cu-O thin film deposited on MgO substrate by resistive evaporation technique. A pulverized mixture of Y, BaF[sub 2] and Cu weighed in the atomic proportion was evaporated from resistively heated source onto a MgO substrate kept at 400 C using a simple vacuum system. The substrate temperature was then raised to 700 C for insitu heat treatment. Oxygen was injected through a nozzle placed close to substrate surface, thus raising the pressure to about 7 Pa during the heat treatment, which lasted for about 15 minutes. The film was then gradually cooled down to room temperature and the pressure raised to atmospheric pressure. The films thus obtained were measured and the values of thermoelectric power measurements in the plane of the of the film were found to be close to the typical thermoelectric power values of crystalline Y-Ba-Cu-O superconductors. As expected, vanishing values of the thermoelectric power have been observed below 80K. If the relation observed for sintered Y-Ba-Cu-O is applied for thin films, it suggests an extremely low oxygen deficiency. (orig.)

  8. Direct Observation of Room-Temperature Stable Magnetism in LaAlO3/SrTiO3 Heterostructures.

    Science.gov (United States)

    Yang, Ming; Ariando; Zhou, Jun; Asmara, Teguh Citra; Krüger, Peter; Yu, Xiao Jiang; Wang, Xiao; Sanchez-Hanke, Cecilia; Feng, Yuan Ping; Venkatesan, T; Rusydi, Andrivo

    2018-03-21

    Along with an unexpected conducting interface between nonmagnetic insulating perovskites LaAlO 3 and SrTiO 3 (LaAlO 3 /SrTiO 3 ), striking interfacial magnetisms have been observed in LaAlO 3 /SrTiO 3 heterostructures. Interestingly, the strength of the interfacial magnetic moment is found to be dependent on oxygen partial pressures during the growth process. This raises an important, fundamental question on the origin of these remarkable interfacial magnetic orderings. Here, we report a direct evidence of room-temperature stable magnetism in a LaAlO 3 /SrTiO 3 heterostructure prepared at high oxygen partial pressure by using element-specific soft X-ray magnetic circular dichroism at both Ti L 3,2 and O K edges. By combining X-ray absorption spectroscopy at both Ti L 3,2 and O K edges and first-principles calculations, we qualitatively ascribe that this strong magnetic ordering with dominant interfacial Ti 3+ character is due to the coexistence of LaAlO 3 surface oxygen vacancies and interfacial (Ti Al -Al Ti ) antisite defects. On the basis of this new understanding, we revisit the origin of the weak magnetism in LaAlO 3 /SrTiO 3 heterostructures prepared at low oxygen partial pressures. Our calculations show that LaAlO 3 surface oxygen vacancies are responsible for the weak magnetism at the interface. Our result provides direct evidence on the presence of room-temperature stable magnetism and a novel perspective to understand magnetic and electronic reconstructions at such strategic oxide interfaces.

  9. Unexpected metal-insulator transition in thick Ca1-xSrxVO3 film on SrTiO3 (100) single crystal

    Science.gov (United States)

    Takayanagi, Makoto; Tsuchiya, Takashi; Namiki, Wataru; Ueda, Shigenori; Minohara, Makoto; Horiba, Koji; Kumigashira, Hiroshi; Terabe, Kazuya; Higuchi, Tohru

    2018-03-01

    Epitaxial Ca1-xSrxVO3 (0 ≦ x ≦ 1) thin films were grown on (100)-oriented SrTiO3 substrates by using the pulsed laser deposition technique. In contrast to the previous report that metal-insulator transition (MIT) in Ca1-xSrxVO3 (CSVO) was achieved only for extremely thin films (several nm thick), MIT was observed at 39, 72, and 113 K for films with a thickness of 50 nm. The electronic structure was investigated by hard and soft X-ray photoemission spectroscopy (HX-PES and SX-PES). The difference between these PES results was significant due to the variation in an escape depth of photoelectrons of PES. While HX-PES showed that the V 2p3/2 spectra consisted of four peaks (V5+, V4+, V3+, and V2+/1+), SX-PES showed only three peaks (V5+, V4+, and V3+). This difference can be caused by a strain from the substrate, which leads to the chemical disorder (V5+, V4+, V3+, and V2+/1+). The thin film near the substrate is affected by the strain. The positive magnetoresistance is attributed to the effect of electron-electron interactions in the disorder system. Therefore, the emergence of MIT can be explained by the electron-electron interactions from the chemical disorder due to the strain.

  10. Fabrication and Photocatalytic Property of One-Dimensional SrTiO3/TiO2-xNx Nanostructures

    Directory of Open Access Journals (Sweden)

    Huarong Zhang

    2013-01-01

    Full Text Available One-dimensional SrTiO3/TiO2−xNx nanostructures were prepared by the hydrothermal method and investigated by X-ray diffraction (XRD, transmission electron microscopy (TEM, X-ray photoelectron spectroscopy (XPS, and ultraviolet-visible diffuse reflectance spectroscopy (UV-vis DRS measurements. The photocatalytic activities of the prepared samples were evaluated by photodegrading the methylene blue (MB solution. According to the characterizations, the intermediate product of SrTiO3/titanate nanotubes was presented after hydrothermal processing of the TiO2−xNx nanoparticles with the mixed solution of NaOH and Sr(NO32. The final product of SrTiO3/TiO2−xNx nanorods was obtained after calcining the intermediate. As compared to the TiO2−xNx nanoparticles, the absorption performance of SrTiO3/titanate nanotubes or SrTiO3/TiO2−xNx nanorods was depressed, instead of improving it. The mechanisms of the absorption property changes were discussed. The SrTiO3/TiO2−xNx nanorods presented better photocatalytic activity than the TiO2−xNx nanoparticles or nanorods. However, due to overmuch adsorption, the SrTiO3/titanate nanotubes gave ordinary photocatalytic performances.

  11. Preparation and characterization of SrTiO3-Ag/AgCl hybrid composite with promoted plasmonic visible light excited photocatalysis

    Science.gov (United States)

    Shen, Hongfang; Wei, Hongyu; Pan, Zhidong; Lu, Youjun; Wang, Yanmin

    2017-11-01

    An efficient visible light responsive photocatalyst hybrid composite SrTiO3-Ag/AgCl was prepared via hydrothermal method and subsequent chemical precipitation/in-situ photoreduction at room temperature. The phase structure, morphology, element mapping distribution, surface chemical composition, specific surface area, and light absorption ability of the samples were characterized. The transient photocurrent response and electrochemical impedance under visible light illumination indicate that SrTiO3-Ag/AgCl composite possesses a more intense photocurrent response and a smaller surface resistance than SrTiO3 and Ag/AgCl due to the lower electrons-holes recombination. SrTiO3-Ag/AgCl composite exhibits an obvious promoted visible light excited photovcatalytic activity in photodecomposition of methyl orange, rhodamine B and phenol, compared to SrTiO3 and Ag/AgCl. A possible photocatalytic mechanism was proposed, indicating that the synergistic effect of surface plasmonic resonance of Ag0 photoreduced from AgCl and decreased the recombination rate of photogenerated carriers through transferring electrons from the surface of Ag0 to SrTiO3 promote the excellent photocatalytic activity of SrTiO3-Ag/AgCl. Moreover, the photodegradation reaction process of methyl orange, rhodamine B and phenol on SrTiO3-Ag/AgCl follows the pseudo-first-order kinetic model, and the reaction rate constants are approximately 10 times greater than those on Ag/AgCl. Four-recycling photocatalytic process of methyl orange on SrTiO3-Ag/AgCl also indicates a superior stability and durability.

  12. Epitaxial growth of BaTiO3 thin films by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Chern, C. S.; Zhao, J.; Luo, L.; Lu, P.; Li, Y. Q.; Norris, P.; Kear, B.; Cosandey, F.; Maggiore, C. J.; Gallois, B.; Wilkens, B. J.

    1992-03-01

    High-quality BaTiO3 thin films have been epitaxially grown on (001) LaAlO3 and (001) NdGaO3 substrates by plasma-enhanced metalorganic chemical vapor deposition at a substrate temperature of 680 °C. X-ray diffraction θ-2θ, ω, and φ scan results all indicate that single-crystalline BaTiO3 thin films were epitaxially grown on the substrates with orientation perpendicular to the substrates. The high degree of epitaxial crystallinity is further confirmed by Rutherford backscattering spectrometry which gives a minimum yield of 7.5% and 11% for films deposited on LaAlO3 and NdGaO3, respectively. Cross-section high-resolution electron microscopy images also showed that the layer epitaxy of BaTiO3 was characterized by an atomically abrupt film/substrate interface. Scanning electron micrographs showed that these films had very smooth surface morphologies.

  13. Determination of local order in the amorphous precursor to Ba-hexaferrite thin-film recording media

    Science.gov (United States)

    Snyder, J. E.; Harris, V. G.; Das, B. N.; Koon, N. C.; Sui, X.; Kryder, M. H.

    1996-04-01

    Ba-hexaferrite thin films for recording media applications are often fabricated by a two-step process: sputter deposition of an amorphous precursor, followed by annealing to crystallize the BaFe12O19 phase. The magnetic anisotropy of the crystalline films can be either in-plane or perpendicular, depending on the sputtering process used in the first step. However, conventional structural characterization techniques have not been able to distinguish between different as-sputtered films. Using polarization-dependent extended x-ray absorption fine structure (PD-EXAFS), we have observed anisotropic local structure around both Ba and Fe atoms in the amorphous precursor films. Comparison of the results suggests that the amorphous films consist of networks of Fe atoms surrounded by their O nearest neighbors, with Ba atoms fitting into in-between spaces as network modifiers (there might also be some minor Fe network modifying contribution). The local structural anisotropy of the amorphous films appears to determine the orientation of the fast-growing basal plane directions during annealing, and thus the directions of the c axes and the magnetic anisotropy.

  14. The Role of Annealing Process in Ag-Based BaSnO3 Multilayer Thin Films

    Science.gov (United States)

    Wu, Muying; Yu, Shihui; He, Lin; Yang, Lei; Zhang, Weifeng

    2016-08-01

    The BaSnO3/Ag/BaSnO3 multilayer structure was designed and fabricated on a quartz glass by magnetron sputtering, followed by an annealing process at a temperature from 150 to 750 °C in air. In this paper, we investigated the influence of the annealing temperature on the structural, optical, and electrical properties of the multilayers and proposed the mechanisms of conduction and transmittance. The maximum value of the figure of merit of 31.8 × 10-3 Ω-1 was achieved for the BaSnO3/Ag/BaSnO3 multilayer thin films annealed at 150 °C, while the average optical transmittance in the visible ranges was >84 %, the resistivity was 5.71 × 10-5 Ω cm, and the sheet resistance was 5.57 Ω/sq. When annealed at below 600 °C, the values of resistivity and transmittance of the multilayers were within an acceptable range (resistivity 80 %). The observed property of the multilayer film is suitable for the application of transparent conductive electrodes.

  15. Ultrahigh Energy Density in SrTiO3Film Capacitors.

    Science.gov (United States)

    Hou, Chuangming; Huang, Weichuan; Zhao, Wenbo; Zhang, Dalong; Yin, Yuewei; Li, Xiaoguang

    2017-06-21

    Solid-state dielectric film capacitors with high-energy-storage density will further promote advanced electronic devices and electrical power systems toward miniaturization, lightweight, and integration. In this study, the influence of interface and thickness on energy storage properties of SrTiO 3 (STO) films grown on La 0.67 Sr 0.33 MnO 3 (LSMO) electrode are systematically studied. The cross-sectional high resolution transmission electron microscopy reveals an ion interdiffusion layer and oxygen vacancies at the STO/LSMO interface. The capacitors show good frequency stability and increased dielectric constant with increasing STO thickness (410-710 nm). The breakdown strength (E b ) increases with decreasing STO thickness and reaches 6.8 MV/cm. Interestingly, the E b under positive field is enhanced significantly and an ultrahigh energy density up to 307 J/cm 3 with a high efficiency of 89% is realized. The enhanced E b may be related to the modulation of local electric field and redistribution of oxygen vacancies at the STO/LSMO interface. Our results should be helpful for potential strategies to design devices with ultrahigh energy density.

  16. Bonding and structure of a reconstructed (001) surface of SrTiO3 from TEM.

    Science.gov (United States)

    Zhu, Guo-zhen; Radtke, Guillaume; Botton, Gianluigi A

    2012-10-18

    The determination of the atomic structure and the retrieval of information about reconstruction and bonding of metal oxide surfaces is challenging owing to the highly defective structure and insulating properties of these surfaces. Transmission electron microscopy (TEM) offers extremely high spatial resolution (less than one ångström) and the ability to provide systematic information from both real and reciprocal space. However, very few TEM studies have been carried out on surfaces because the information from the bulk dominates the very weak signals originating from surfaces. Here we report an experimental approach to extract surface information effectively from a thickness series of electron energy-loss spectra containing different weights of surface signals, using a wedge-shaped sample. Using the (001) surface of the technologically important compound strontium titanate, SrTiO(3) (refs 4-6), as a model system for validation, our method shows that surface spectra are sensitive to the atomic reconstruction and indicate bonding and crystal-field changes surrounding the surface Ti cations. Very good agreement can be achieved between the experimental surface spectra and crystal-field multiplet calculations based on the proposed atomic surface structure optimized by density functional calculations. The distorted TiO(6-x) units indicated by the proposed model can be viewed directly in our high-resolution scanning TEM images. We suggest that this approach be used as a general method to extract valuable spectroscopic information from surface atoms in parallel with high-resolution images in TEM.

  17. Quantum Critical Origin of the Superconducting Dome in SrTiO_{3}.

    Science.gov (United States)

    Edge, Jonathan M; Kedem, Yaron; Aschauer, Ulrich; Spaldin, Nicola A; Balatsky, Alexander V

    2015-12-11

    We expand the well-known notion that quantum criticality can induce superconductivity by proposing a concrete mechanism for superconductivity due to quantum ferroelectric fluctuations. To this end, we investigate the origin of superconductivity in doped SrTiO_{3} using a combination of density functional and strong coupling theories within the framework of quantum criticality. Our density functional calculations of the ferroelectric soft mode frequency as a function of doping reveal a crossover related to quantum paraelectricity at a doping level coincident with the experimentally observed top of the superconducting dome. Thus, we suggest a model in which the soft mode fluctuations provide the pairing interaction for superconductivity carriers. Within our model, the low doping limit of the superconducting dome is explained by the emergence of the Fermi surface, and the high doping limit by departure from the quantum critical regime. We predict that the highest critical temperature will increase and shift to lower carrier doping with increasing ^{18}O isotope substitution, a scenario that is experimentally verifiable. Our model is applicable to other quantum paraelectrics, such as KTaO_{3}.

  18. Unconventional 1/f noise in Graphene on SrTiO3 substrate

    Science.gov (United States)

    Sahoo, Anindita; Ruiter, Roald; Banerjee, Tamalika; Ghosh, Arindam

    Electrical transport in graphene has been of great interest in both fundamental and applied research. The impact of the substrate is critical to the operation of graphene field effect transistors (FET), which can modify several transport parameters as well as low frequency 1/f noise. Replacing the usual SiO2/Si++ substrate with SrTiO3[STO] having high dielectric constant, has opened up new possibilities, leading to large doping, higher mobility, and also hysteretic transfer characteristics for memory applications. We have studied 1/f noise in dual-gated single layer graphene (SLG) FET sandwiched between STO (substrate) and mechanically exfoliated hexagonal boron-nitride (dielectric for the top gate). The area normalized noise amplitude of SLG on STO followed an unexpected `W'-shape dependence of gate-bias with the central peak at Dirac point in conflict with the usual `V', `M' or ` Λ'-type dependence of SLG noise on SiO2. We discuss possible microscopic mechanisms for such behavior, considering the role of puckering of oxygen atoms introducing inward dipole moments that can form a new source of electrostatically tunable scattering mechanism at the graphene-STO interface.

  19. Transport phenomena in SrVO3/SrTiO3 superlattices

    Science.gov (United States)

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2018-03-01

    Epitaxial [(SrVO3)7/(SrTiO3)4] r (SVO/STO) superlattices were grown on (0 0 1)-oriented LSAT substrates using a pulsed electron-beam deposition technique. The transport properties of the superlattices were investigated by varying the number of repetitions of the SVO/STO bilayers r (1  ⩽  r  ⩽  9). A single SVO/STO bilayer (r  =  1) was semiconducting, whereas an increase in the number of repetitions r resulted in metallic behavior in the superlattices with r  ⩾  3. The transport phenomena in the SVO/STO superlattices can be regarded as conduction through parallel-coupled SVO layers, the SVO layer embedded in the superlattices showed a great enhancement in the conductivity compared with the single SVO layer. This work provides further evidence of electronic phase separation in the SVO ultrathin layer that has been recently discovered, the SVO ultrathin layer is considered as a 2D Mott insulator with metallic and insulating phases coexisting, the coupling between SVO layers embedded in the SVO/STO superlattices creates more conduction pathways with increasing number of repetitions r, resulting in a crossover from insulating to metallic behavior.

  20. Mechanical control of magnetism in oxygen deficient perovskite SrTiO3.

    Science.gov (United States)

    Zhang, Yajun; Wang, Jie; Sahoo, M P K; Shimada, Takahiro; Kitamura, Takayuki

    2015-10-28

    Mechanical control of magnetism in perovskite oxides is an important and promising approach in spintronics. Based on the first-principles calculations, we demonstrate that a negative pressure leads to a great enhancement of magnetic moment in deficient SrTiO3 with oxygen vacancies, whereas a positive pressure results in the gradual disappearance of magnetism. Spin charge density, Bader charge analysis and electronic density of states successfully elucidate the origin and underlying physics of the enhancement and disappearance of magnetism. It is found that the split electronic states of dz(2), dyz and dzx in the 3d orbitals of Ti atoms remarkably contribute to the occupancy of majority spin states under negative pressure, which induces a large magnetic moment. Under positive pressure, however, the equal occupancy of both majority and minority t2g and eg states leads to the disappearance of magnetization. In addition, both negative and positive pressures can largely lower the vacancy formation enthalpy, suggesting that the oxygen vacancy is preferable with pressure. Our findings may provide a mechanism to achieve the pressure control of magnetization in nonmagnetic perovskite oxides.

  1. Quantum Critical Origin of the Superconducting Dome in SrTiO3

    Science.gov (United States)

    Edge, Jonathan M.; Kedem, Yaron; Aschauer, Ulrich; Spaldin, Nicola A.; Balatsky, Alexander V.

    2015-12-01

    We expand the well-known notion that quantum criticality can induce superconductivity by proposing a concrete mechanism for superconductivity due to quantum ferroelectric fluctuations. To this end, we investigate the origin of superconductivity in doped SrTiO3 using a combination of density functional and strong coupling theories within the framework of quantum criticality. Our density functional calculations of the ferroelectric soft mode frequency as a function of doping reveal a crossover related to quantum paraelectricity at a doping level coincident with the experimentally observed top of the superconducting dome. Thus, we suggest a model in which the soft mode fluctuations provide the pairing interaction for superconductivity carriers. Within our model, the low doping limit of the superconducting dome is explained by the emergence of the Fermi surface, and the high doping limit by departure from the quantum critical regime. We predict that the highest critical temperature will increase and shift to lower carrier doping with increasing 18O isotope substitution, a scenario that is experimentally verifiable. Our model is applicable to other quantum paraelectrics, such as KTaO3 .

  2. Effect of SrTiO3 on dielectric and piezoelectric properties of NBT

    Science.gov (United States)

    Rajani Malathi, A.; Kumar, G. S.; Prasad, G.

    2015-02-01

    Composites of (1 - x)Na0.5Bi0.5TiO3-(x)SrTiO3, where x = 0.05, 0.10, 0.15, 0.2, 0.3 and 0.9 are studied. Individual compounds are synthesized by sol gel, and composites are prepared by solid-state sintering process. Through the analysis of X-ray diffraction, lattice parameters are obtained and, from scanning electron microscope (SEM), micro-structure of the samples is observed. The depolarization temperature (Td) and the Curie temperature (Tc) are determined from dielectric studies. Relaxor behavior of the samples is interpreted using modified Curie Weiss law. Control of polarization in sodium bismuth titanate (NBT) is achieved using strontium titanate (SrTiO3-ST) and studied through polarization vs. electric field (PE) loops and piezoelectric measurements. The intra-granual and inter-granual effects on the electrical properties of the ceramics are studied from impedance analysis.

  3. Strain induced superconductivity in the parent compound BaFe2As2

    Science.gov (United States)

    Engelmann, J.; Grinenko, V.; Chekhonin, P.; Skrotzki, W.; Efremov, D. V.; Oswald, S.; Iida, K.; Hühne, R.; Hänisch, J.; Hoffmann, M.; Kurth, F.; Schultz, L.; Holzapfel, B.

    2013-12-01

    The discovery of superconductivity with a transition temperature, Tc, up to 65 K in single-layer FeSe (bulk Tc=8 K) films grown on SrTiO3 substrates has attracted special attention to Fe-based thin films. The high Tc is a consequence of the combined effect of electron transfer from the oxygen-vacant substrate to the FeSe thin film and lattice tensile strain. Here we demonstrate the realization of superconductivity in the parent compound BaFe2As2 (no bulk Tc) just by tensile lattice strain without charge doping. We investigate the interplay between strain and superconductivity in epitaxial BaFe2As2 thin films on Fe-buffered MgAl2O4 single crystalline substrates. The strong interfacial bonding between Fe and the FeAs sublattice increases the Fe-Fe distance due to the lattice misfit, which leads to a suppression of the antiferromagnetic spin density wave and induces superconductivity with bulk Tc≈10 K. These results highlight the role of structural changes in controlling the phase diagram of Fe-based superconductors.

  4. Highly oriented Tl2Ba2Ca2Cu3O10 thin films by pulsed laser evaporation

    Science.gov (United States)

    Liou, S. H.; Aylesworth, K. D.; Ianno, N. J.; Johs, B.; Thompson, D.

    1989-01-01

    Superconducting thin films on MgO (100) substrates with nearly pure Tl2Ba2Ca2Cu3O10 (2:2:2:3) phase using pulsed laser evaporation and postannealing have been fabricated. The films had c axes perpendicular to the substrates. Superconducting films with onset temperatures of 125 K and zero resistance at 110 K were obtained. X-ray microprobe fluorescence measurements indicate that a typical composition of films is Tl(0.66)Ba(1.77)Ca(1.46)Cu3O(x) which is low in Tl compared to that expected for the 2:2:2:3 phase. A typical grain size is greater than 10 microns revealed by scanning electron microscopy.

  5. Surface dependent structural phase transition in SrTiO 3 observed with spin relaxation of 8Li

    Science.gov (United States)

    Smadella, M.; Salman, Z.; Chow, K. H.; Egilmez, M.; Fan, I.; Hossain, M. D.; Kiefl, R. F.; Kreitzman, S. R.; Levy, C. D. P.; MacFarlane, W. A.; Mansour, A. I.; Morris, G. D.; Parolin, T. J.; Pearson, M.; Saadaoui, H.; Song, Q.; Wang, D.

    2009-04-01

    We investigate the 105 K structural phase transition in SrTiO 3 using depth controlled measurements of the spin relaxation of 8Li. The measurements were performed in zero external magnetic field and rely on the local electric field gradient (EFG) at the crystalline implantation site of the 8Li ( I=2) to hold the nuclear polarization. The tetragonal distortion accompanying the phase transition modifies the EFG in some 8Li implantation sites, resulting in an observable loss of 8Li polarization. This loss of polarization begins at a temperature T*=150 K, indicating there is some loss of cubic symmetry well above the bulk transition. We find that the value of T* is unaffected by the range of implantation depths available (10-150 nm); however, the temperature dependence of the polarization depends on the surface preparation of the SrTiO 3 sample.

  6. On the origin of metallic conductivity at the interface of LaAlO3/SrTiO3

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Christensen, Dennis; Trier, Felix

    2012-01-01

    To determine the origin of the quasi-two-dimensional electron gas formed at the interface between the two complex oxides of LaAlO3 (LAO) and SrTiO3 (STO), various amorphous films of LAO, La2O3, Al2O3, and La7/8Sr1/8MnO3 (LSMO), were deposited on TiO2-terminated (0 0 1) STO substrates by pulsed...... laser deposition at room temperature. Metallic interfaces are observed when the over-layers are amorphous LAO, La2O3, or Al2O3, while insulating interfaces are observed when the over-layer is LSMO. The interfacial conductivity of these SrTiO3-based hetero-structures shows strong dependence on both film...

  7. Water adsorption on SrTiO3(001) studied by x-ray standing wave excited photoelectron spectroscopy

    Science.gov (United States)

    Zegenhagen, Jorg; Solokha, Vladyslav; Wilson, Axel; Duncan, David; Garai, Debi; Hingerl, Kurt

    We investigated the nature of water adsorption and in particular the H2O and/or OH- bonding sites on different SrTiO3(001) surfaces using the powerful technique of standing wave excited photoelectron spectroscopy. This allowed us determining whether the H2O adsorption is associative or dissociative and additionally localizing the exact bonding site of the different oxygen species (water oxygen and OH- oxygen species). We deposited water in ultra high vacuum on several differently structured or reconstruction SrTiO3(001) surfaces in the range from 100K to room temperature. Our results provide valuable insight into water adsorption on STO(001) surfaces and its specific catalytic activity in view of water splitting applications. They also help clarify previous conflicting previous results.

  8. Topotactic epitaxy of SrTiO3 mesocrystal superstructures with anisotropic construction for efficient overall water splitting

    International Nuclear Information System (INIS)

    Zhang, Peng; Fujitsuka, Mamoru; Majima, Tetsuro; Ochi, Tomoya; Kobori, Yasuhiro; Tachikawa, Takashi

    2017-01-01

    The higher-order structures of semiconductor-based photocatalysts play crucial roles in their physicochemical properties for efficient light-to-energy conversion. A novel perovskite SrTiO 3 mesocrystal superstructure with well-defined orientation of assembled cubic nanocrystals was synthesized by topotactic epitaxy from TiO 2 mesocrystals through a facile hydrothermal treatment. The SrTiO 3 mesocrystal exhibits three times the efficiency for the hydrogen evolution of conventional disordered systems in alkaline aqueous solution. It also exhibits a high quantum yield of 6.7 % at 360 nm in overall water splitting and even good durability up to 1 day. Temporal and spatial spectroscopic observations revealed that the synergy of the efficient electron flow along the internal nanocube network and efficient collection at the larger external cubes produces remarkably long-lived charges for enhanced photocatalysis. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Acoustoelastic effect of textured (Ba,Sr)TiO{sub 3} thin films under an initial mechanical stress

    Energy Technology Data Exchange (ETDEWEB)

    Kamel, Marwa; Mseddi, Souhir; Njeh, Anouar; Ben Ghozlen, Mohamed Hédi [Laboratoire de Physique des Matériaux, Faculté des Sciences de Sfax, Université de Sfax, Sfax (Tunisia); Donner, Wolfgang [Institute of Materials Science, University of Technology, Alarich-Weiss-Strasse.2, 64287 Darmstadt (Germany)

    2015-12-14

    Acoustoelastic (AE) analysis of initial stresses plays an important role as a nondestructive tool in current engineering. Two textured BST (Ba{sub 0.65}Sr{sub 0.35}TiO{sub 3}) thin films, with different substrate to target distance, were grown on Pt(111)/TiO{sub 2}/SiO{sub 2}/Si(001) substrate by rf-magnetron sputtering deposition techniques. A conventional “sin{sup 2} ψ” method to determine residual stress and strain in BST films by X-ray diffraction is applied. A laser acoustic waves (LA-waves) technique is used to generate surface acoustic waves (SAW) propagating in both samples. Young's modulus E and Poisson ratio ν of BST films in different propagation directions are derived from the measured dispersion curves. Estimation of effective second-order elastic constants of BST thin films in stressed states is served in SAW study. This paper presents an original investigation of AE effect in prestressed Ba{sub 0.65}Sr{sub 0.35}TiO{sub 3} films, where the effective elastic constants and the effect of texture on second and third order elastic tensor are considered and used. The propagation behavior of Rayleigh and Love waves in BST thin films under residual stress is explored and discussed. The guiding velocities affected by residual stresses, reveal some shifts which do not exceed four percent mainly in the low frequency range.

  10. Epitaxial Stabilization of the Perovskite Phase in (Sr(1-x)Ba(x))MnO3 Thin Films.

    Science.gov (United States)

    Langenberg, Eric; Guzmán, Roger; Maurel, Laura; Martínez de Baños, Lourdes; Morellón, Luis; Ibarra, M Ricardo; Herrero-Martín, Javier; Blasco, Javier; Magén, César; Algarabel, Pedro A; Pardo, José A

    2015-11-04

    A novel mechanism of ferroelectricity driven by off-centering magnetic Mn(4+) ions was proposed in (Sr1-xBax)MnO3, in its ideal perovskite phase, which yields enormous expectations in the search for strong magnetoelectric materials. Still, the desired perovskite phase has never been stabilized in thin films due to its extremely metastable character. Here, we report on a thorough study of the perovskite phase stabilization of (Sr1-xBax)MnO3 thin films, 0.2 ≤ x ≤ 0.5, grown by pulsed laser deposition onto (001)-oriented perovskite substrates. X-ray diffraction measurements and scanning transmission electron microscopy reveal that, under appropriate deposition conditions, the perovskite phase is fully stabilized over the nonferroelectric hexagonal phase, despite the latter being increasingly favored on increasing Ba-content. Moreover, we have managed to grow epitaxial coherent cube-on-cube (Sr1-xBax)MnO3 films upon strains ranging from 0% to 4%. Our results become a milestone in further studying perovskite (Sr1-xBax)MnO3 thin films and pave the way for tailoring ferroic and magnetoelectric properties either by strain engineering or Ba-doping.

  11. High Tc thin film superconductors: preparation, patterning and characterization. [Y-Ba-Cu-O; Bi-Sr-Ca-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J. (Center for Tech. Education, Holon (Israel) Raymond and Beverly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel-Aviv Univ. (Israel))

    1991-12-10

    A conventional oil-pumped vacuum system equipped with resistively heated tungsten boat sources was used for evaporation of bismuth- or yttrium-based cuprates for high Tc thin films superconductors. A well-ground mixture with atomic proportions of bismuth, SrF{sub 2}, CaF{sub 2} and copper for bismuth-based material, and of YF{sub 3}, BaF{sub 2} and copper for yttrium-based material, was inserted into the boat and then resistively evaporated onto different substrates such as MgO, ZrO{sub 2} and SrTiO{sub 3} kept at room temperature. Yttrium-based thin films were found to have a better quality upon reduction of fluorine in the constituents. Thus, films prepared with an yttrium BaF{sub 2} and copper mixture show a metallic-like behaviour, sharper transition and higher zero-resistance temperature as compared with that of films obtained by using a YF{sub 2} constituent instead of yttrium. Bismuth-based thin films were found to lose bismuth during heat treatment unless the copper constituent ended the evaporation process and was subsequently fully oxidized at 400degC. Bismuth-based patterned films were easily obtained by using a lift-off photolithographic method. Typical thickness of the films was measured to be about 0.5 {mu}m after heat treatment. (orig.).

  12. Superconducting epitaxial YBa2Cu3O7− δ on SrTiO3-buffered Si ...

    Indian Academy of Sciences (India)

    2017-05-30

    May 30, 2017 ... Home; Journals; Bulletin of Materials Science; Volume 41; Issue 1. Superconducting epitaxial YBa 2 Cu 3 O 7 − δ on SrTiO 3 -buffered Si(001). K AHMADI-MAJLAN H ZHANG X SHEN M J MOGHADAM M CHRYSLER P CONLIN R HENSLEY D SU J Y T WEI J H NGAI. Volume 41 Issue 1 February 2018 ...

  13. SrTiO3 Nanocube-Doped Polyaniline Nanocomposites with Enhanced Photocatalytic Degradation of Methylene Blue under Visible Light

    Directory of Open Access Journals (Sweden)

    Syed Shahabuddin

    2016-02-01

    Full Text Available The present study highlights the facile synthesis of polyaniline (PANI-based nanocomposites doped with SrTiO3 nanocubes synthesized via the in situ oxidative polymerization technique using ammonium persulfate (APS as an oxidant in acidic medium for the photocatalytic degradation of methylene blue dye. Field emission scanning electron microscopy (FESEM, transmission electron microscopy (TEM, thermogravimetric analysis (TGA, X-ray diffraction (XRD, UV–Vis spectroscopy, Brunauer–Emmett–Teller analysis (BET and Fourier transform infrared spectroscopy (FTIR measurements were used to characterize the prepared nanocomposite photocatalysts. The photocatalytic efficiencies of the photocatalysts were examined by degrading methylene blue (MB under visible light irradiation. The results showed that the degradation efficiency of the composite photocatalysts that were doped with SrTiO3 nanocubes was higher than that of the undoped polyaniline. In this study, the effects of the weight ratio of polyaniline to SrTiO3 on the photocatalytic activities were investigated. The results revealed that the nanocomposite P-Sr500 was found to be an optimum photocatalyst, with a 97% degradation efficiency after 90 min of irradiation under solar light.

  14. Enhanced thermoelectric figure-of-merit in thermally robust, nanostructured superlattices based on SrTiO3

    KAUST Repository

    Abutaha, Anas I.

    2015-03-24

    Thermoelectric (TE) metal oxides overcome crucial disadvantages of traditional heavy-metal-alloy-based TE materials, such as toxicity, scarcity, and instability at high temperatures. Here, we report the TE properties of metal oxide superlattices, composed from alternating layers of 5% Pr3+-doped SrTiO3-δ (SPTO) and 20% Nb5+-doped SrTiO3-δ (STNO) fabricated using pulsed laser deposition (PLD). Excellent stability is established for these superlattices by maintaining the crystal structure and reproducing the TE properties after long-time (20 h) annealing at high temperature (∼1000 K). The introduction of oxygen vacancies as well as extrinsic dopants (Pr3+ and Nb5+), with different masses and ionic radii, at different lattice sites in SPTO and STNO layers, respectively, results in a substantial reduction of thermal conductivity via scattering a wider range of phonon spectrum without limiting the electrical transport and thermopower, leading to an enhancement in the figure-of-merit (ZT). The superlattice composed of 20 SPTO/STNO pairs, 8 unit cells of each layer, exhibits a ZT value of 0.46 at 1000 K, which is the highest among SrTiO3-based thermoelectrics. © 2015 American Chemical Society.

  15. Native SrTiO3 (001) surface layer from resonant Ti L2,3 reflectance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Valvidares, Manuel; Huijben, Mark; Yu, Pu; Ramesh, Ramamoorthy; Kortright, Jeffrey

    2010-11-03

    We quantitatively model resonant Ti L2,3 reflectivity Rs,p(q, hn) from several SrTiO3 (001) single crystals having different initial surface preparations and stored in ambient conditions before and between measurements. All samples exhibit unexpected 300 K Rs(hn) - Rp(hn) anisotropy corresponding to weak linear dichroism and tetragonal distortion of the TiO6 octahedra indicating a surface layer with properties different from cubic SrTiO3. Oscillations in Rs(q) confirm a ubiquitous surface layer 2-3 nm thick that evolves over a range of time scales. Resonant optical constant spectra derived from Rs,p(hn) assuming a uniform sample are refined using a single surface layer to fit measured Rs(q). Differences in surface layer and bulk optical properties indicate that the surface is significantly depleted in Sr and enriched in Ti and O. While consistent with the tendency of SrTiO3 surfaces toward non-stoichiometry, this layer does not conform simply to existing models for the near surface region and apparently forms via room temperature surface reactions with the ambient. This new quantitative spectral modeling approach is generally applicable and has potential to study near-surface properties of a variety of systems with unique chemical and electronic sensitivities.

  16. Voltage-controlled ferromagnetism and magnetoresistance in LaCoO3/SrTiO3 heterostructures

    International Nuclear Information System (INIS)

    Hu, Chengqing; Park, Keun Woo; Yu, Edward T.; Posadas, Agham; Demkov, Alexander A.; Jordan-Sweet, Jean L.

    2013-01-01

    A LaCoO 3 /SrTiO 3 heterostructure grown on Si (001) is shown to provide electrically switchable ferromagnetism, a large, electrically tunable magnetoresistance, and a vehicle for achieving and probing electrical control over ferromagnetic behavior at submicron dimensions. Fabrication of devices in a field-effect transistor geometry enables application of a gate bias voltage that modulates strain in the heterostructure via the converse piezoelectric effect in SrTiO 3 , leading to an artificial inverse magnetoelectric effect arising from the dependence of ferromagnetism in the LaCoO 3 layer on strain. Below the Curie temperature of the LaCoO 3 layer, this effect leads to modulation of resistance in LaCoO 3 as large as 100%, and magnetoresistance as high as 80%, both of which arise from carrier scattering at ferromagnetic-nonmagnetic interfaces in LaCoO 3 . Finite-element numerical modeling of electric field distributions is used to explain the dependence of carrier transport behavior on gate contact geometry, and a Valet-Fert transport model enables determination of spin polarization in the LaCoO 3 layer. Piezoresponse force microscopy is used to confirm the existence of piezoelectric response in SrTiO 3 grown on Si (001). It is also shown that this structure offers the possibility of achieving exclusive-NOR logic functionality within a single device

  17. Relationship between Crystal Shape, Photoluminescence, and Local Structure in SrTiO3 Synthesized by Microwave-Assisted Hydrothermal Method

    Directory of Open Access Journals (Sweden)

    Luís F. da Silva

    2012-01-01

    Full Text Available This paper describes the effect of using different titanium precursors on the synthesis and physical properties of SrTiO3 powders obtained by microwave-assisted hydrothermal method. X-ray diffraction measurements, X-ray absorption near-edge structure (XANES spectroscopy, field emission scanning electron microscopy (FE-SEM, and high-resolution transmission electron microscopy (HRTEM were carried out to investigate the structural and optical properties of the SrTiO3 spherical and cubelike-shaped particles. The appropriate choice of the titanium precursor allowed the control of morphological and photoluminescence (PL properties of SrTiO3 compound. The PL emission was more intense in SrTiO3 samples composed of spherelike particles. This behavior was attributed to the existence of a lower amount of defects due to the uniformity of the spherical particles.

  18. Controlling the conductivity of amorphous LaAlO3/SrTiO3 interfaces by in-situ application of an electric field during fabrication

    DEFF Research Database (Denmark)

    Trier, Felix; Amoruso, S.; Christensen, Dennis Valbjørn

    2013-01-01

    Amorphous-LaAlO3/SrTiO3 interfaces present metallic conductivity similar to those found in their all-crystalline counterparts. Here, the conductivity of amorphous-LaAlO3/SrTiO3 interfaces is modified by an external electric field applied in-situ with a biased truncated cone electrode (−10 V ≤ Vbias...

  19. Epitaxial growth of SrTiO3/YBa2Cu3O7 - x heterostructures by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Liang, S.; Chern, C. S.; Shi, Z. Q.; Lu, P.; Safari, A.; Lu, Y.; Kear, B. H.; Hou, S. Y.

    1994-06-01

    We report heteroepitaxial growth of SrTiO3 on YBa2Cu3O7-x/LaAlO3 substrates by plasma-enhanced metalorganic chemical vapor deposition. X-ray diffraction results indicated that SrTiO3 films were epitaxially grown on a (001) YBa2Cu3O7-x surface with [100] orientation perpendicular to the surface. The film composition, with Sr/Ti molar ratio in the range of 0.9 to 1.1, was determined by Rutherford backscattering spectrometry and energy dispersive spectroscopy. The thickness of the SrTiO3 films is 0.1-0.2 μm. The epitaxial growth was further evidenced by high-resolution transmission electron microscopy and selected area diffraction. Atomically abrupt SrTiO3/YBa2Cu3O7-x interface and epitaxial growth with [100]SrTiO3∥[001]YBa2Cu3O7-x were observed in this study. The superconducting transition temperature of the bottom YBa2Cu3O7-x layer, as measured by ac susceptometer, did not significantly degrade after the growth of overlayer SrTiO3. The capacitance-voltage measurements showed that the dielectric constant of the SrTiO3 films was as high as 315 at a signal frequency of 100 KHz. The leakage current density through the SrTiO3 films is about 1×10-6 A/cm2 at 2-V operation. Data analysis on the current-voltage characteristic indicated that the conduction process is related to bulk-limited Poole-Frenkel emission.

  20. Surface morphology analysis of nanostructured (Ba sub x , Sr sub 1 sub - sub x)TiO sub 3 thin films using fractal method

    CERN Document Server

    Hong, K J; Choi, W K; Cho, J C

    2003-01-01

    Based on the fractal theory, this paper uses scanning electron microscopy images to investigate the roughness characteristics of nanostructured (Ba Sr)TiO sub 3 thin films by sol-gel methods. The percentage grain area, surface fractal dimensions and 3D image are evaluated using image analysis methods. The thickness of the (Ba Sr)TiO sub 3 thin films was 260-280 nm. The surface fractal dimensions were increased with strontium doping, and grain area, were decreased with it. The fractal dimension and the grain areas of the (Ba sub 0 sub . sub 7 Sr sub 0 sub . sub 3)TiO sub 3 thin films were 1.81 and 81%. Based on the image analysis, the roughness height of 3D images as 256 levels was about 3 nm and its distribution was about 35-40% for the (Ba sub 0 sub . sub 8 Sr sub 0 sub . sub 2)TiO sub 3 and (Ba sub 0 sub . sub 7 Sr sub 0 sub . sub 3)TiO sub 3 thin films. The roughness height of the BST thin films was distributed from 35% to 40% ranging from 3 nm to 4 nm. By increasing the strontium doping, the roughness hei...

  1. High-mobility BaSnO3 thin-film transistor with HfO2 gate insulator

    Science.gov (United States)

    Kim, Young Mo; Park, Chulkwon; Kim, Useong; Ju, Chanjong; Char, Kookrin

    2016-01-01

    Thin-film transistors have been fabricated using La-doped BaSnO3 as n-type channels and (In,Sn)2O3 as source, drain, and gate electrodes. HfO2 was grown as gate insulators by atomic layer deposition. The field-effect mobility, Ion/Ioff ratio, and subthreshold swing of the device are 24.9 cm2 V-1 s-1, 6.0 × 106, and 0.42 V dec-1, respectively. The interface trap density, evaluated to be higher than 1013 cm-2 eV-1, was found to be slightly lower than that of the thin-film transistor with an Al2O3 gate insulator. We attribute the much smaller subthreshold swing values to the higher dielectric constant of HfO2.

  2. Large tunneling anisotropic magnetoresistance in La0.7Sr0.3MnO3/pentacene/Cu structures prepared on SrTiO3 (110) substrates

    Science.gov (United States)

    Kamiya, Takeshi; Miyahara, Chihiro; Tada, Hirokazu

    2017-01-01

    We investigated tunneling anisotropic magnetoresistance (TAMR) at the interface between pentacene and La0.7Sr0.3MnO3 (LSMO) thin films prepared on SrTiO3 (STO) (110) substrates. The dependence of the TAMR ratio on the magnetic field strength was approximately ten times larger than that of the magnetic field angle at a high magnetic field. This large difference in the TAMR ratio is explained by the interface magnetic anisotropy of strain-induced LSMO thin films on a STO (110) substrate, which has an easy axis with an out-of-plane component. We also note that the TAMR owing to out-of-plane magnetization was positive at each angle of the in-plane magnetic field. This result implies that active control of the interface magnetic anisotropy between organic materials and ferromagnetic metals should realize nonvolatile and high-efficiency TAMR devices.

  3. Epitaxial films of YBa2Cu3O/sub 7-//sub δ/ on NdGaO3, LaGaO3, and SrTiO3 substrates deposited by laser ablation

    International Nuclear Information System (INIS)

    Koren, G.; Gupta, A.; Giess, E.A.; Segmueller, A.; Laibowitz, R.B.

    1989-01-01

    Frequency-doubled Nd:YAG laser (532 nm) pulses of 1.7 J/cm 2 and 10 ns duration were used to deposit thin films of YBa 2 Cu 3 O/sub 7-//sub δ/ by laser ablation on NdGaO 3 , LaGaO 3 , and SrTiO 3 substrates held at 725 +- 5 0 C in 0.2 Torr of O 2 ambient. Electrical resistivities versus temperature of all films show normal metallic behavior and sharp superconducting transitions with T/sub c/ (R = 0) at 92--93 K. Critical current densities in 0.3--0.6 μm thick, 200 μm long, and 10--30 μm wide strips were measured to be 10 6 A/cm 2 at 60, 77, and 80 K in the films on LaGaO 3 , NdGaO 3 , and SrTiO 3 , respectively. X-ray diffraction patterns show that all films grew epitaxially, with domains of only two crystalline orientations rotated 90 0 with respect to each other in the a-b plane (consistent with twins), and the c axis perpendicular to the substrates. The closely matched lattice constants of the film and substrates (0.8--2.1%) result in epitaxial growth of the films

  4. Temperature dependence of flexoelectricity in BaTiO3 and SrTiO3 perovskite nanostructures

    International Nuclear Information System (INIS)

    Mbarki, R.; Haskins, J.B.; Kinaci, A.; Cagin, T.

    2014-01-01

    Piezoelectricity is a property of non-centrosymmetric crystals. In most typically used ferroelectrics, this property is lost as the temperature is increased beyond the Curie point thus strongly reducing the availability of efficient materials that can be used for high temperature energy harvesting. Flexoelectricity, as can be shown from simple symmetry arguments, is a universal and linear electromechanical coupling that dictates the development of polarization upon application of inhomogeneous strains. The implications of this phenomenon become amplified at the nanoscale. In this communication, we develop a molecular dynamics approach predicated on a specially tailored interatomic force-field to extract the temperature dependence of flexoelectricity. Surprisingly, we find that it, at least for Barium Titanate and Strontium Titanate nano structures, increases with temperature. Apart from cataloging this interesting observation for the future use in high temperature energy harvesting, we also examine the physical mechanisms that lead to the observed temperature dependence

  5. Temperature dependence of flexoelectricity in BaTiO3 and SrTiO3 perovskite nanostructures

    Science.gov (United States)

    Mbarki, R.; Haskins, J. B.; Kinaci, A.; Cagin, T.

    2014-06-01

    Piezoelectricity is a property of non-centrosymmetric crystals. In most typically used ferroelectrics, this property is lost as the temperature is increased beyond the Curie point thus strongly reducing the availability of efficient materials that can be used for high temperature energy harvesting. Flexoelectricity, as can be shown from simple symmetry arguments, is a universal and linear electromechanical coupling that dictates the development of polarization upon application of inhomogeneous strains. The implications of this phenomenon become amplified at the nanoscale. In this communication, we develop a molecular dynamics approach predicated on a specially tailored interatomic force-field to extract the temperature dependence of flexoelectricity. Surprisingly, we find that it, at least for Barium Titanate and Strontium Titanate nano structures, increases with temperature. Apart from cataloging this interesting observation for the future use in high temperature energy harvesting, we also examine the physical mechanisms that lead to the observed temperature dependence.

  6. Evolution of the SrTiO3/MoO3 interface electronic structure: An in situ photoelectron spectroscopy study

    KAUST Repository

    Du, Yuanmin

    2015-05-12

    Modifying the surface energetics, particularly the work function, of advanced materials is of critical importance for a wide range of surface- and interface-based devices. In this work, using in situ photoelectron spectroscopy, we investigated the evolution of electronic structure at the SrTiO3 surface during the growth of ultrathin MoO3 layers. Thanks to the large work function difference between SrTiO3 and MoO3, the energy band alignment on the SrTiO3 surface is significantly modified. The charge transfer and dipole formation at the SrTiO3/MoO3 interface leads to a large modulation of work function and an apparent doping in SrTiO3. The measured evolution of electronic structure and upward band bending suggest that the growth of ultrathin MoO3 layers is a powerful tool to modulate the surface energetics of SrTiO3, and this surface-engineering approach could be generalized to other functional oxides.

  7. Integration of adsorption and reduction for uranium uptake based on SrTiO3/TiO2 electrospun nanofibers

    Science.gov (United States)

    Hu, Lin; Yan, Xue-Wu; Zhang, Xue-Ji; Shan, Dan

    2018-01-01

    The integration of adsorption and reduction for uranium uptake via photoelectrochemical method was conducted based on hetero-structure SrTiO3/TiO2 electrospun nanofibers. The SrTiO3/TiO2 was fabricated by two steps. First, TiO2 nanofibers were prepared via electrospinning, and then the SrTiO3 cubes grew on the surface of TiO2 nanofibers to form heterostructure by in situ hydrothermal treatment. For the uranium uptake based on photoelectrochemical method, the FTO electrodes modified by SrTiO3/TiO2 electrospun nanofibers removed uranium concentration by 81 ppm, higher than TiO2 nanoparticles, SrTiO3 nanoparticles and TiO2 electrospun nanofibers (59 ppm, 40 ppm and 70 ppm respectively). Besides, the photocurrent of these materials was also measured through photoelectrochemical measurements. Meanwhile, surface analyses using various techniques (Scanning electron microscopic, Transmission electron microscope and X-ray photoelectron spectroscopy) was also performed. Finally, the mechanism of electron transfer between SrTiO3/TiO2 and uranium was proposed.

  8. Development and construction of a novel MOCVD facility for the growth of ferroelectric thin layers

    International Nuclear Information System (INIS)

    Schaefer, P.R.

    2002-02-01

    This thesis deals with the production of ferroelectric thin films using the MOCVD technology. The main focus is put on the design and construction of a complete MOCVD research system that is equipped with a novel non-contact vaporizer system. The precursors are nebulized in an ultrasonic atomizer and injected into a hot gas stream, so they can vaporize without getting into contact with a hot surface. Hence, one of the biggest disadvantages of conventional vaporizer concepts, the contamination of the vaporizing element with decomposing chemicals, could be avoided completely, resulting in a nearly maintenance-free system. In a direct comparison with the well-established Direct Liquid Injection Subsystem DLI-25C from MKS Instruments, the advantages of non-contact evaporation were clearly demonstrated. Additionally, the scope of this work included the development of standard deposition processes for the ternary oxides SrTiO 3 , BaTiO 3 und PbTiO 3 and growth studies were performed. Electrical measurements performed on MIM structures with Pt electrodes and SrTiO 3 as dielectric indicate a high film quality comparable with results presented in the literature. Furthermore, for the first time the solid solution (Pb x Ba 1-x )TiO 3 has been deposited by MOCVD. This material system is widely unknown in thin film form and it is well suited as a model system to investigate the influence of mechanical stresses on the film properties, because it represents a transition between the (as a thin film) superparaelectric barium titanate and the ferroelectric lead titanate. Through variation of the lead/barium ratio the tetragonal distortion of the lattice cell could be adjusted in a wide range. (orig.)

  9. Ferroelectric BaTiO3 thin films on Ti substrate fabricated using pulsed-laser deposition.

    Science.gov (United States)

    He, J; Jiang, J C; Liu, J; Collins, G; Chen, C L; Lin, B; Giurgiutiu, V; Guo, R Y; Bhalla, A; Meletis, E I

    2010-09-01

    We report on the fabrication of ferroelectric BaTiO3 thin films on titanium substrates using pulsed laser deposition and their microstructures and properties. Electron microscopy studies reveal that BaTiO3 films are composed of crystalline assemblage of nanopillars with average cross sections from 100 nm to 200 nm. The BaTiO3 films have good interface structures and strong adhesion with respect to Ti substrates by forming a rutile TiO2 intermediate layer with a gradient microstructure. The room temperature ferroelectric polarization measurements show that the as-deposited BTO films possess nearly the same spontaneous polarization as the bulk BTO ceramics indicating formation of ferroelectric domains in the films. Successful fabrication of such ferroelectric films on Ti has significant importance for the development of new applications such as structural health monitoring spanning from aerospace to civil infrastructure. The work can be extended to integrate other ferroelectric oxide films with various promising properties to monitor the structural health of materials.

  10. Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films

    Science.gov (United States)

    Wang, W. Y.; Tang, Y. L.; Zhu, Y. L.; Suriyaprakash, J.; Xu, Y. B.; Liu, Y.; Gao, B.; Cheong, S.-W.; Ma, X. L.

    2015-11-01

    Doped BaSnO3 has arisen many interests recently as one of the promising transparent conducting oxides for future applications. Understanding the microstructural characteristics are crucial for the exploration of relevant devices. In this paper, we investigated the microstructural features of 0.001% La doped BaSnO3 thin film using both conventional and aberration corrected transmission electron microscopes. Contrast analysis shows high densities of Ruddlesden-Popper faults in the film, which are on {100} planes with translational displacements of 1/2a  . Atomic EELS element mappings reveal that the Ruddlesden-Popper faults are Ba-O layer terminated, and two kinds of kink structures at the Ruddlesden-Popper faults with different element distributions are also demonstrated. Quantitative analysis on lattice distortions of the Ruddlesden-Popper faults illustrates that the local lattice spacing poses a huge increment of 36%, indicating that large strains exist around the Ruddlesden-Popper faults in the film.

  11. Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films.

    Science.gov (United States)

    Wang, W Y; Tang, Y L; Zhu, Y L; Suriyaprakash, J; Xu, Y B; Liu, Y; Gao, B; Cheong, S-W; Ma, X L

    2015-11-03

    Doped BaSnO3 has arisen many interests recently as one of the promising transparent conducting oxides for future applications. Understanding the microstructural characteristics are crucial for the exploration of relevant devices. In this paper, we investigated the microstructural features of 0.001% La doped BaSnO3 thin film using both conventional and aberration corrected transmission electron microscopes. Contrast analysis shows high densities of Ruddlesden-Popper faults in the film, which are on {100} planes with translational displacements of 1/2a  . Atomic EELS element mappings reveal that the Ruddlesden-Popper faults are Ba-O layer terminated, and two kinds of kink structures at the Ruddlesden-Popper faults with different element distributions are also demonstrated. Quantitative analysis on lattice distortions of the Ruddlesden-Popper faults illustrates that the local lattice spacing poses a huge increment of 36%, indicating that large strains exist around the Ruddlesden-Popper faults in the film.

  12. Large Energy Density, Excellent Thermal Stability, and High Cycling Endurance of Lead-Free BaZr0.2Ti0.8O3 Film Capacitors.

    Science.gov (United States)

    Sun, Zixiong; Ma, Chunrui; Wang, Xi; Liu, Ming; Lu, Lu; Wu, Ming; Lou, Xiaojie; Wang, Hong; Jia, Chun-Lin

    2017-05-24

    A large energy storage density (ESD) of 30.4 J/cm 3 and high energy efficiency of 81.7% under an electrical field of 3 MV/cm was achieved at room temperature by the fabrication of environmentally friendly lead-free BaZr 0.2 Ti 0.8 O 3 epitaxial thin films on Nb-doped SrTiO 3 (001) substrates by using a radio-frequency magnetron sputtering system. Moreover, the BZT film capacitors exhibit great thermal stability of the ESD from 16.8 J/cm 3 to 14.0 J/cm 3 with efficiency of beyond 67.4% and high fatigue endurance (up to 10 6 cycles) in a wide temperature range from room temperature to 125 °C. Compared to other BaTiO 3 -based energy storage capacitor materials and even Pb-based systems, BaZr 0.2 Ti 0.8 O 3 thin film capacitors show either high ESD or great energy efficiency. All of these excellent results revealed that the BaZr 0.2 Ti 0.8 O 3 film capacitors have huge potential in the application of modern electronics, such as locomotive and pulse power, in harsh working environments.

  13. Nanoscale electromechanics of paraelectric materials with mobile charges: Size effects and nonlinearity of electromechanical response of SrTiO3 films

    Science.gov (United States)

    Morozovska, A. N.; Eliseev, E. A.; Svechnikov, G. S.; Kalinin, S. V.

    2011-07-01

    Nanoscale enables a broad range of electromechanical coupling mechanisms that are forbidden or are negligible in the materials. We conduct a theoretical study of the electromechanical response of thin paraelectric films with mobile vacancies (or ions) paradigmatic for capacitor-type measurements in x-ray scattering, piezoresponse force microscopy (PFM), and electrochemical strain microscopy (ESM). Using a quantum paraelectric SrTiO3 (STO) film as a model material with well-known electromechanical, electronic, and electrochemical properties, we evaluate the contributions of electrostriction, Maxwell stress, flexoelectric effect, deformation potential, and compositional Vegard strains caused by mobile vacancies (or ions) and electrons to the electromechanical response. The local electromechanical response manifests strong size effects, the scale of which is determined by the ratio of the STO film thickness and PFM/ESM tip size to the carriers’ screening radius. Due to the strong dielectric nonlinearity effect inherent in quantum paraelectrics, the dependence of the STO film electromechanical response on the applied voltage demonstrates a pronounced crossover from the linear to the quadratic law and then to the sublinear law with a factor of 2/3 under the voltage increase. The temperature dependence of the electromechanical response as determined by the interplay between the dielectric susceptibility and the screening radius is nonmonotonic and has pronounced maxima, the position and width of which can be tuned by film thickness. This paper provides a comparative framework for the analysis of electromechanical coupling in the nonpiezoelectric nanosystems.

  14. Orientation Control of Interfacial Magnetism at La0.67Sr0.33MnO3/SrTiO3 Interfaces.

    Science.gov (United States)

    Guo, Er-Jia; Charlton, Timothy; Ambaye, Haile; Desautels, Ryan D; Lee, Ho Nyung; Fitzsimmons, Michael R

    2017-06-07

    Understanding the magnetism at the interface between a ferromagnet and an insulator is essential because the commonly posited magnetic "dead" layer close to an interface can be problematic in magnetic tunnel junctions. Previously, degradation of the magnetic interface was attributed to charge discontinuity across the interface. Here, the interfacial magnetism was investigated using three identically prepared La 0.67 Sr 0.33 MnO 3 (LSMO) thin films grown on different oriented SrTiO 3 (STO) substrates by polarized neutron reflectometry. In all cases the magnetization at the LSMO/STO interface is larger than the film bulk. We show that the interfacial magnetization is largest across the LSMO/STO interfaces with (001) and (111) orientations, which have the largest net charge discontinuities across the interfaces. In contrast, the magnetization of LSMO/STO across the (110) interface, the orientation with no net charge discontinuity, is the smallest of the three orientations. We show that a magnetically degraded interface is not intrinsic to LSMO/STO heterostructures. The approach to use different crystallographic orientations provides a means to investigate the influence of charge discontinuity on the interfacial magnetization.

  15. Deposition of epitaxial BiFeO3/CoFe2O4 nanocomposites on (001) SrTiO3 by combinatorial pulsed laser deposition

    Science.gov (United States)

    Aimon, Nicolas M.; Hun Kim, Dong; Kyoon Choi, Hong; Ross, C. A.

    2012-02-01

    BiFeO3/CoFe2O4 (BFO/CFO) nanocomposites were grown on SrTiO3 by pulsed laser deposition using a combinatorial method in which Bi1.2FeO3 and CoFe2O4 targets are alternately ablated. The films had the same vertically nanostructured morphology as thin films prepared by ablation of a single target, consisting of epitaxial CoFe2O4 pillars in a BiFeO3 matrix. In a series of samples synthesized with a compositional spread, the out-of-plane magnetic anisotropy and the out-of-plane compressive strain of the CoFe2O4 pillars increased with decreasing volume fraction, and the anisotropy agreed with the value predicted from the strain state and magnetoelastic coefficients of CoFe2O4. These results show the dominant effect of magnetoelastic anisotropy in determining the magnetic hysteresis of the nanocomposite.

  16. Preparation and properties of the (Sr,BaNb2O6 thin films by using the sputtering method

    Directory of Open Access Journals (Sweden)

    Diao Chien-Chen

    2017-01-01

    Full Text Available Strontium barium niobate (Sr0.3Ba0.7Nb2O6, SBN thin films were deposited on silicon substrate by using the radio frequency magnetron sputtering and under different deposition power and time at room temperature. Surface morphology and thicknesses of the SBN thin films were characterized by field emission scanning electron microscopy. The crystallization films at different deposition power and time were analyzed by X-ray diffraction (XRD using CuKα radiation from a Rigaku rotating anode with an incident angle of 2°. The remnant polarization (Pr, saturation polarization (Ps, and minimum coercive field (Ec properties of the metal-ferroelectric-metal (MFM structure were measured using ferroelectric material test instrument. The SBN thin films deposited at 90 min and 125 W had the maximum Pr, Ps, and minimum Ec of 1.26 μC/cm2, 2.41 μC/cm2, and 201.6 kV/cm, respectively. From above results, it knows that the SBN thin films suit for application on ferroelectric random access memory (FeRAM.

  17. Improved current transport properties of post annealed Y1Ba2Cu3O7-x thin films using Ag doping

    DEFF Research Database (Denmark)

    Clausen, Thomas; Skov, Johannes; Jacobsen, Claus Schelde

    1996-01-01

    The influence of Ag doping on the transport properties of Y1Ba2Cu3O7–x thin films prepared by Y, BaF2, and Cu co-evaporation and optimized ex situ post annealing has been investigated. Both undoped and Ag doped films have values of Tc above 90 K, but Jc (77 K) is highly dependent on the nominal...

  18. Ca doping effect on the magnetic and electronic transport properties in double perovskite PrBaCo2O5+δ films

    Science.gov (United States)

    Bao, Shanyong; Pang, Shengli; Wang, Wenzhi; Chen, Jiahui; Chen, Mingfeng; Ma, Jing; Nan, Ce-Wen; Chen, Chonglin

    2017-12-01

    Ca doped double perovskite PrBa1-xCaxCo2O5+δ (x = 0, 0.3, and 0.5) thin films were epitaxially grown on the (001) SrTiO3 substrates to systematically investigate the A' site doping effect on the magnetic and electronic transport properties. With the increase in the Ca content, the magnetization measurements on the films show that the magnetic moments are significantly increased and the largest magnetic moment of 88 emu/cm3 can be achieved in the film with x = 0.5 or about 90 times larger than that from the undoped PrBaCo2O5+δ film. The electronic transport property measurements on the films indicate that the electrical conductivity can be altered by various Ca doping contents. It is interesting to note that both undoped PrBaCo2O5+δ and PrBa0.5Ca0.5Co2O5+δ films exhibit simple activation behavior, but the PrBa0.7Ca0.3Co2O5+δ film exhibits the 3D variable-range hopping mode conduction.

  19. Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure.

    Science.gov (United States)

    Kim, Yu Jin; Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Jeon, Woojin; Moon, Taehwan; Kim, Keum Do; Jeong, Doo Seok; Yamada, Hiroyuki; Hwang, Cheol Seong

    2016-01-08

    Enhancement of capacitance by negative capacitance (NC) effect in a dielectric/ferroelectric (DE/FE) stacked film is gaining a greater interest. While the previous theory on NC effect was based on the Landau-Ginzburg-Devonshire theory, this work adopted a modified formalism to incorporate the depolarization effect to describe the energy of the general DE/FE system. The model predicted that the SrTiO3/BaTiO3 system will show a capacitance boost effect. It was also predicted that the 5 nm-thick Al2O3/150 nm-thick BaTiO3 system shows the capacitance boost effect with no FE-like hysteresis behavior, which was inconsistent with the experimental results; the amorphous-Al2O3/epitaxial-BaTiO3 system showed a typical FE-like hysteresis loop in the polarization - voltage test. This was due to the involvement of the trapped charges at the DE/FE interface, originating from the very high field across the thin Al2O3 layer when the BaTiO3 layer played a role as the NC layer. Therefore, the NC effect in the Al2O3/BaTiO3 system was frustrated by the involvement of reversible interface charge; the highly stored charge by the NC effect of the BaTiO3 during the charging period could not be retrieved during the discharging process because integral part of the polarization charge was retained within the system as a remanent polarization.

  20. Erbium and nitrogen co-doped SrTiO3 with highly visible light photocatalytic activity and stability by solvothermal synthesis

    International Nuclear Information System (INIS)

    Xu, Jing; Wei, Yuelin; Huang, Yunfang; Wang, Jing; Zheng, Xuanqing; Sun, Zhixian; Wu, Ying; Tao, Xinling; Fan, Leqing; Wu, Jihuai

    2015-01-01

    Highlights: • Er/N co-doped SrTiO 3 was prepared by a solvothermal process at low temperature. • The co-doping induces the band gap narrowing and prominent absorbance in visible light region. • The samples show excellent catalytic activity and stability under visible light irradiation. - Abstract: Erbium–nitrogen co-doped SrTiO 3 photocatalysts have been synthesized by a facile solvothermal method. The resulting samples were analyzed by FE-SEM, XRD, BET-surface area and UV–vis. The UV–vis absorption spectra of these powders indicated that erbium–nitrogen co-doped SrTiO 3 possessed stronger absorption bands in the visible light region in comparison with that of pure SrTiO 3 . The occurrence of the erbium–nitrogen co-doped cubic SrTiO 3 induced the higher photocatalytic activities for the degradation of methyl orange (MO) under irradiation by ultraviolet light and visible light, respectively, being superior to that of pure SrTiO 3 and commercial TiO 2 (P-25) powders. In addition, the Er–N co-doped SrTiO 3 (initial molar ratios of Sr/Er/N = 1:0.015:0.1, designated as S5) sample showed the best photocatalytic activity with the degradation rate as high as 98% after 30 min under the visible light irradiation. After five cycles, the photocatalytic activity of the S5 catalyst showed no significant decrease, which indicated that the photocatalysts were stable under visible light irradiation

  1. Hydrothermal–galvanic couple synthesis of directionally oriented BaTiO3 thin films on TiN-coated substrates

    International Nuclear Information System (INIS)

    Yang, Chia-Jung; Tsai, Di-You; Chan, Pei-Hsuan; Wu, Chu-Tsun; Lu, Fu-Hsing

    2013-01-01

    BaTiO 3 films were synthesized on TiN-coated Si substrate below 100 °C by a hydrothermal–galvanic couple technique in barium contained alkaline solutions. X-ray diffraction and electron backscatter diffraction results show that the BaTiO 3 thin films were directionally oriented grown on the TiN/Si substrates, i.e., (111) BaTiO 3 over (111) TiN. The surface morphologies revealed that BaTiO 3 nucleated and grew over the TiN surface with a single layer. From kinetic analyses, the growth rates of BaTiO 3 films prepared by the hydrothermal–galvanic couple technique were faster than a hydrothermal method. The galvanic effects were confirmed by investigating the induced currents and energies. The galvanic currents were generated and controlled by both the dissolution of TiN and the formation of BaTiO 3 . The output electric energies increased rapidly with the reaction time and leveled off at the full coverage of BaTiO 3 . - Highlights: • Cubic BaTiO 3 films are synthesized by a hydrothermal–galvanic couple method (HT–GC). • Growth rates of BaTiO 3 films made by HT–GC are faster than a hydrothermal method. • BaTiO 3 films are directionally oriented grown on the TiN/Si substrates. • Galvanic currents are controlled by dissolution of TiN and formation of BaTiO 3

  2. δ-Doping of oxygen vacancies dictated by thermodynamics in epitaxial SrTiO3 films

    Directory of Open Access Journals (Sweden)

    Fengmiao Li

    2017-06-01

    Full Text Available Homoepitaxial SrTiO3(110 film is grown by molecular beam epitaxy in ultra-high vacuum with oxygen diffusing from substrate as the only oxidant. The resulted oxygen vacancies (VOs are found to be spatially confined within few subsurface layers only, forming a quasi-two-dimensional doped region with a tunable high concentration. Such a δ-function distribution of VOs is essentially determined by the thermodynamics associated with the surface reconstruction, and facilitated by the relatively high growth temperature. Our results demonstrate that it is feasible to tune VOs distribution at the atomic scale by controlling the lattice structure of oxide surfaces.

  3. Carrier-Density Control of the SrTiO3 (001) Surface 2D Electron Gas studied by ARPES.

    Science.gov (United States)

    Walker, Siobhan McKeown; Bruno, Flavio Yair; Wang, Zhiming; de la Torre, Alberto; Riccó, Sara; Tamai, Anna; Kim, Timur K; Hoesch, Moritz; Shi, Ming; Bahramy, Mohammad Saeed; King, Phil D C; Baumberger, Felix

    2015-07-08

    The origin of the 2D electron gas (2DEG)stabilized at the bare surface of SrTiO3 (001) is investigated. Using high-resolution angle-resolved photoemission and core-level spectroscopy, it is shown conclusively that this 2DEG arises from light-induced oxygen vacancies. The dominant mechanism driving vacancy formation is identified, allowing unprecedented control over the 2DEG carrier density. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Neutron scattering study of the soft optic mode in SrTiO3 under a high magnetic field

    International Nuclear Information System (INIS)

    Comes, R.; Shapiro, S.M.; Frazer, B.C.; Shirane, G.

    1981-01-01

    According to the vibronic theory of ferroelectric phase transitions, appreciable shifts in T/sub c/, with corresponding shifts in soft-mode frequencies, should be observable under high-magnetic-field conditions. The field effects have been predicted to be much larger in wide-gap than in narrow-gap materials. Neutron scattering measurements on the soft optic zone-center mode in SrTiO 3 were carried out under magnetic field up to 70 kOe over a temperature range of 4.5 to 50 K. No magnetic-field-induced shifts of the soft-mode frequency were observed

  5. Structure and magnetism of Fe-doped BaSnO3 thin films

    Science.gov (United States)

    Alaan, Urusa S.; N'Diaye, Alpha T.; Shafer, Padraic; Arenholz, Elke; Suzuki, Yuri

    2017-05-01

    BaSnO3 is an excellent candidate system for developing a new class of perovskite-based dilute magnetic semiconductors. In this study, we show that BaSn0.95Fe0.05O3 can be grown from a background pressure of ˜2×10-3 mTorr to oxygen pressures of 300 mTorr with high crystallinity and excellent structural quality. When grown in vacuum, the films may be weakly ferromagnetic with a nonzero x-ray magnetic circular dichroism signal on the Fe L3 edge. Growth with oxygen flow appears to suppress magnetic ordering. Even for very thick films grown in 100 mTorr O2, the films are paramagnetic. The existence of ferromagnetism in vacuum-grown BaSnO3 may be attributed to the F-center exchange mechanism, which relies on the presence of oxygen vacancies to facilitate the ferromagnetism. However, other possible extrinsic contributions to the magnetic ordering, such as clusters of Fe3O4 and FeO or contamination can also explain the observed behavior.

  6. Structure and magnetism of Fe-doped BaSnO3 thin films

    Directory of Open Access Journals (Sweden)

    Urusa S. Alaan

    2017-05-01

    Full Text Available BaSnO3 is an excellent candidate system for developing a new class of perovskite-based dilute magnetic semiconductors. In this study, we show that BaSn0.95Fe0.05O3 can be grown from a background pressure of ∼2×10−3 mTorr to oxygen pressures of 300 mTorr with high crystallinity and excellent structural quality. When grown in vacuum, the films may be weakly ferromagnetic with a nonzero x-ray magnetic circular dichroism signal on the Fe L3 edge. Growth with oxygen flow appears to suppress magnetic ordering. Even for very thick films grown in 100 mTorr O2, the films are paramagnetic. The existence of ferromagnetism in vacuum-grown BaSnO3 may be attributed to the F-center exchange mechanism, which relies on the presence of oxygen vacancies to facilitate the ferromagnetism. However, other possible extrinsic contributions to the magnetic ordering, such as clusters of Fe3O4 and FeO or contamination can also explain the observed behavior.

  7. Plasmons at the LaAlO3/SrTiO3 interface and in the graphene-LaAlO3/SrTiO3 double layer

    Science.gov (United States)

    Faridi, A.; Asgari, Reza

    2017-04-01

    We study plasmon modes of the two-dimensional electron gas residing at the interface of band insulators LaAlO3 and SrTiO3 (LAO/STO) and the plasmon excitations of graphene-LAO/STO double layer as well. Considering the electron-electron interaction within random phase approximation, we calculate the plasmon dispersions of both systems numerically and in the long-wavelength limit analytical expressions for collective modes are found. One optical mode and two (three) acoustic modes are predicted for the LAO/STO (graphene-LAO/STO) system where only the uppermost acoustic mode of both systems can emerge above the electron-hole continuum depending on the characteristics of each system. In the case of LAO/STO interface, thanks to the spatial separation between t2 g orbitals, the upper acoustic mode might be undamped at the long-wavelength limit depending on the exact value of the dielectric constant of SrTiO3. Same as other double layer systems, the interlayer distance for the graphene-LAO/STO system plays a crucial role in damping the upper acoustic mode. Faster damping of all plasmon modes of the present double layer system in comparison with the ones with conventional two-dimensional electron gas instead of t2 g electron gas is also found due to heavier effective masses of the gas and also stronger interlayer Coulomb interaction.

  8. (Sr,Ba)(Si,Ge){sub 2} for thin-film solar-cell applications: First-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Mukesh, E-mail: Kumar.Mukesh@nims.go.jp, E-mail: mkgarg79@gmail.com [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Umezawa, Naoto [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan); TU-NIMS Joint Research Center, School of Materials Science and Engineering, Tianjin University, 92 Weijin Road, Nankai District, Tianjin (China); Imai, Motoharu [Superconducting Properties Unit, National Institute for Materials Science, Ibaraki 305-0047 (Japan)

    2014-05-28

    In order to meet the increasing demand for electric power generation from solar energy conversion, the development of efficient light absorber materials has been awaited. To this end, the electronic and optical properties of advanced alkaline-earth-metals disilicides and digermanides (SrSi{sub 2}, BaSi{sub 2}, SrGe{sub 2}, and BaGe{sub 2}) are studied by means of the density functional theory using HSE06 exchange-correlation energy functional. Our calculations show that all these orthorhombic structured compounds have fundamental indirect band gaps in the range E{sub g} ≈ 0.89–1.25 eV, which is suitable for solar cell applications. The estimated lattice parameters and band gaps are in good agreement with experiments. Our calculations show that the electronic band structures of all four compounds are very similar except in the vicinity of the Γ-point. The valence band of these compounds is made up by Si(Ge)-p states, whereas the conduction band is composed of Sr(Ba)-d states. Their band alignments are carefully determined by estimating the work function of each compound using slab model. The optical properties are discussed in terms of the complex dielectric function ε(ω) = ε{sub 1}(ω) + iε{sub 2}(ω). The static and high-frequency dielectric constants are calculated, taking into account the ionic contribution. The absorption coefficient α(ω) demonstrates that a low energy dispersion of the conduction band, which results in a flat conduction band minimum, leads to large optical activity in these compounds. Therefore, alkaline-earth-metals disilicides and digermanides possess great potential as light absorbers for applications in thin-film solar cell technologies.

  9. Strain profile and polarization enhancement in Ba0.5Sr0.5TiO3 thin films

    International Nuclear Information System (INIS)

    Amir, F.Z.; Donner, W.; Aspelmeyer, M.; Noheda, B.; Xi, X.X.; Moss, S.C.

    2012-01-01

    The sensitivity of spontaneous polarization to epitaxial strain for both 10 and 50 nm thick Ba 0.5 Sr 0.5 TiO 3 (BSTO) ferroelectric thin films has been studied. Crystal truncation rod (CTR) profiles in the 00L directions at different wavelengths, and grazing incidence diffraction (GID) in the 0K0 direction on a single crystal have been recorded. Modeling of the CTR data gives a detailed picture of the strain and provides clear evidence of the film out-of-plane expansion at the surface, an increase of the polarization, as well as a contraction at the interface. GID data confirm the fitting of the CTR, showing an in-plane expansion of the BSTO film at the interface and a contraction at the surface. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Combined experimental and theoretical investigations of the photoluminescent behavior of Ba(Ti, Zr)O3 thin films

    International Nuclear Information System (INIS)

    Cavalcante, L.S.; Gurgel, M.F.C.; Paris, E.C.; Simoes, A.Z.; Joya, M.R.; Varela, J.A.; Pizani, P.S.; Longo, E.

    2007-01-01

    The correlation between experimental data and theoretical calculations have been investigated to explain the photoluminescence at room temperature of Ba(Ti 0.75 Zr 0.25 )O 3 (BTZ) thin films prepared by the polymeric precursor method. The degree of structural order-disorder was investigated by X-ray diffraction, Fourier transform infrared spectroscopy, ultraviolet-visible absorption spectroscopy and photoluminescence (PL) measurements. First-principles quantum mechanical calculations based on density functional theory (B3LYP level) were employed to study the electronic structure of ordered and deformed asymmetric models. The electronic properties are analyzed and the relevance of the present theoretical and experimental results on the PL behavior is discussed. The presence of localized electronic levels and a charge gradient in the band gap due to a break in symmetry, are responsible for the PL in disordered BTZ lattice

  11. Proton Conduction in Grain-Boundary-Free Oxygen-Deficient BaFeO2.5+δ Thin Films

    Directory of Open Access Journals (Sweden)

    Alexander Benes

    2017-12-01

    Full Text Available Reduction of the operating temperature to an intermediate temperature range between 350 °C and 600 °C is a necessity for Solid Oxide Fuel/Electrolysis Cells (SOFC/SOECs. In this respect the application of proton-conducting oxides has become a broad area of research. Materials that can conduct protons and electrons at the same time, to be used as electrode catalysts on the air electrode, are especially rare. In this article we report on the proton conduction in expitaxially grown BaFeO2.5+δ (BFO thin films deposited by pulsed laser deposition on Nb:SrTiO3 substrates. By using Electrochemical Impedance Spectroscopy (EIS measurements under different wet and dry atmospheres, the bulk proton conductivity of BFO (between 200 °C and 300 °C could be estimated for the first time (3.6 × 10−6 S cm−1 at 300 °C. The influence of oxidizing measurement atmosphere and hydration revealed a strong dependence of the conductivity, most notably at temperatures above 300 °C, which is in good agreement with the hydration behavior of BaFeO2.5 reported previously.

  12. Dielectric collapse at the LaAlO3/SrTiO3(001) heterointerface under applied electric field.

    Science.gov (United States)

    Minohara, M; Hikita, Y; Bell, C; Inoue, H; Hosoda, M; Sato, H K; Kumigashira, H; Oshima, M; Ikenaga, E; Hwang, H Y

    2017-08-25

    The fascinating interfacial transport properties at the LaAlO 3 /SrTiO 3 heterointerface have led to intense investigations of this oxide system. Exploiting the large dielectric constant of SrTiO 3 at low temperatures, tunability in the interfacial conductivity over a wide range has been demonstrated using a back-gate device geometry. In order to understand the effect of back-gating, it is crucial to assess the interface band structure and its evolution with external bias. In this study, we report measurements of the gate-bias dependent interface band alignment, especially the confining potential profile, at the conducting LaAlO 3 /SrTiO 3 (001) heterointerface using soft and hard x-ray photoemission spectroscopy in conjunction with detailed model simulations. Depth-profiling analysis incorporating the electric field dependent dielectric constant in SrTiO 3 reveals that a significant potential drop on the SrTiO 3 side of the interface occurs within ~2 nm of the interface under negative gate-bias. These results demonstrate gate control of the collapse of the dielectric permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.

  13. Studies on novel BiyXz-TiO2/SrTiO3 composites: Surface properties and visible light-driven photoactivity

    Science.gov (United States)

    Marchelek, Martyna; Grabowska, Ewelina; Klimczuk, Tomasz; Lisowski, Wojciech; Giamello, Elio; Zaleska-Medynska, Adriana

    2018-03-01

    A series of novel BiyXz-TiO2/SrTiO3 composites were prepared by multistep synthesis route. The as-prepared photocatalysts were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), diffuse reflectance spectroscopy (DRS), Fourier transform infrared (FT-IR), Raman spectra and BET analysis. The photocatalytic activity test was performed in aqueous solution of phenol under the irradiation of visible light range (λ ≥ 420 nm). Obtained results revealed that the BiOI_TiO2/SrTiO3 sample exhibit the highest photocatalytic activity under visible irradiation (0.6 μmol/dm3/min). Thus, it was demonstrated that modification of the TiO2/SrTiO3 microspheres by flowers-like structure made of bismuth oxyiodide resulted in enhancement of photocatalytic activity under visible light. The role of active species during the decomposition process of organic compound was investigated using different types of active species scavengers as well as electron paramagnetic resonance analysis (EPR). The study showed that in the BiOI_TiO2/SrTiO3/Vis system the holes (h+) plays relevant role in phenol decomposition. Furthermore, the stability and recyclable properties of obtained BiOI_TiO2/SrTiO3 sample were confirmed during three consecutive processes.

  14. Magnetic two-dimensional electron gas at the manganite-buffered LaAlO3/SrTiO3 interface

    DEFF Research Database (Denmark)

    R. Zhang, H.; Zhang, Y.; Zhang, H.

    2017-01-01

    Fabrication of highly mobile spin-polarized two-dimensional electron gas (2DEG) is crucially important for both fundamental and applied research. Usually, spin polarization appears below 10 K for the 2DEG of LaAlO3/SrTiO3 interface, stemming from the magnetic ordering of Ti3+ ions with the mediat......Fabrication of highly mobile spin-polarized two-dimensional electron gas (2DEG) is crucially important for both fundamental and applied research. Usually, spin polarization appears below 10 K for the 2DEG of LaAlO3/SrTiO3 interface, stemming from the magnetic ordering of Ti3+ ions...... with the mediation of itinerant electrons. Herein, we report a magnetic 2DEG at a La7/8Sr1/8MnO3-buffered LaAlO3/SrTiO3 interface, which simultaneously shows electrically tunable anomalous Hall effect and high conductivity. The spin-polarized temperature for the 2DEG is promoted to 30 K while the mobility remains...... high. The magnetism likely results from a gradient manganese interdiffusion into SrTiO3. The present work demonstrates the great potential of manganite-buffered LaAlO3/SrTiO3 interfaces for spintronic applications....

  15. Catalytic Dynamics and Oxygen Diffusion in Doped PrBaCo2O(5.5+δ) Thin Films.

    Science.gov (United States)

    Enriquez, Erik; Xu, Xing; Bao, Shanyong; Harrell, Zach; Chen, Chonglin; Choi, Sihyuk; Jun, Areum; Kim, Guntae; Whangbo, Myung-Hwan

    2015-11-04

    The Sr and Fe codoped double perovskites PrBaCo2O5.5+δ (PrBCO) thin films of Pr(Ba0.5Sr0.5)(Co1.5Fe0.5)O5.5+δ (PBSCFO) were epitaxially grown for chemical catalytic studies. The resistance behavior of PBSCFO epitaxial films was monitored under the switching flow of reducing and oxidizing gases as a function of the gas flow time, t, using an electrical conductivity relaxation (ECR) experimental setup. The R(t) vs t relationships determined at various temperatures show the occurrence of two oxidation processes, Co(2+)/Co(3+) ↔ Co(3+) and Co(3+) ↔ Co(3+)/Co(4+). Mathematical fitting of the observed R(t) vs t relationships was carried out using Fick's second law for one-dimensional diffusion of charge carriers to derive the diffusivity D(T) and τ(T) for the two processes at various temperatures, T. The D(T) vs T relationships were analyzed in terms of the Arrhenius relationship to find the activation energies Ea for each process. Oscillations in the dR(t)/dt plots, observed under oxidation reactions, were discussed in terms of a layer-by-layer oxygen vacancy exchange diffusion mechanism. Our work suggests that thin films of LnBCO (Ln = lanthanide) with their A and B sites doped as in PBSCFO are excellent candidates for the development of low or intermediate temperature energy conversion devices and gas sensor applications.

  16. Anisotropy of the irreversibility field for Zr-doped $(Y,Gd)Ba_2Cu_3O_{7-x}$ thin films up to 45T

    OpenAIRE

    Tarantini, C.; Jaroszynski, J.; Kametani, F.; Zuev, Y. L.; Gurevich, A.; Chen, Y.; Selvamanickam, V.; Larbalestier, D. C.; Christen, D. K.

    2012-01-01

    The anisotropic irreversibility field B$_{Irr}$ of two $YBa_2Cu_3O_{7-x}$ thin films doped with additional rare earth (RE)=(Gd,Y) and Zr and containing strong correlated pins (splayed BaZrO$_{3}$ nanorods, and $RE_2O_3$ nanoprecipitates), has been measured over a very broad range up to 45T at temperatures 56 K

  17. Effect of swift heavy ion irradiation on surface resistance of DyBa2Cu3O7−δ thin films at microwave frequencies

    NARCIS (Netherlands)

    Ail, Ujwala; Banerjee, Tamalika; Bhangale, A.R.; Kanjilal, D.

    2002-01-01

    We report the observation of a pronounced peak in surface resistance at microwave frequencies of 4.88 GHz and 9.55 GHz and its disappearance after irradiation with swift ions in laser ablated DyBa2Cu3O7−δ (DBCO) thin films. The measurements were carried out in zero field as well as in the presence

  18. Effects of BaBi2Ta2O9 thin buffer layer on crystallization and electrical properties of CaBi2Ta2O9 thin films on Pt-coated silicon

    Science.gov (United States)

    Kato, Kazumi; Suzuki, Kazuyuki; Nishizawa, Kaori; Miki, Takeshi

    2001-05-01

    Non-c-axis oriented CaBi2Ta2O9 (CBT) thin films have been successfully deposited via the triple alkoxide solution method on Pt-coated Si substrates by inserting BaBi2Ta2O9 (BBT) thin buffer layers. The BBT thin buffer layer, which was prepared on Pt-coated Si, was a key material for suppression of the nonpolar c-axis orientation and promoting the ferroelectric structure perpendicular to the in-plane direction of CBT thin film. The annealing temperature and thickness of the BBT thin buffer layers affected the dielectric, ferroelectric, and fatigue properties of the stacked CBT/BBT thin films. The resultant 650 °C annealed CBT/BBT(30 nm) thin film exhibited good P-E hysteresis properties and fatigue behaviors.

  19. Electronic and magnetic properties of SrTiO(3)/LaAlO(3) interfaces from first principles.

    Science.gov (United States)

    Chen, Hanghui; Kolpak, Alexie M; Ismail-Beigi, Sohrab

    2010-07-20

    A number of intriguing properties emerge upon the formation of the epitaxial interface between the insulating oxides LaAlO(3) and SrTiO(3). These properties, which include a quasi two-dimensional conducting electron gas, low temperature superconductivity, and magnetism, are not present in the bulk materials, generating a great deal of interest in the fundamental physics of their origins. While it is generally accepted that the novel behavior arises as a result of a combination of electronic and atomic reconstructions and growth-induced defects, the complex interplay between these effects remains unclear. In this report, we review the progress that has been made towards unraveling the complete picture of the SrTiO(3)/LaAlO(3) interface, focusing primarily on present ab initio theoretical work and its relation to the experimental data. In the process, we highlight some key unresolved issues and discuss how they might be addressed by future experimental and theoretical studies.

  20. Major enhancement of the thermoelectric performance in Pr/Nb-doped SrTiO3 under strain

    KAUST Repository

    Amin, B.

    2013-07-16

    The electronic structure and thermoelectric properties of strained (biaxially and uniaxially) Sr0.95Pr0.05TiO3 and SrTi0.95Nb0.05O3 are investigated in the temperature range from 300 K to 1200 K. Substitutions of Pr at the Sr site and Nb at the Ti site generate n-type doping and thus improve the thermoelectric performance as compared to pristine SrTiO3. Further enhancement is achieved by the application of strain, for example, of the Seebeck coefficient by 21% for Sr0.95Pr0.05TiO3 and 10% for SrTi0.95Nb0.05O3 at room temperature in the case of 5% biaxial strain. At 1200 K, we predict figures of merit of 0.58 and 0.55 for 2.5% biaxially strained Sr0.95Pr0.05TiO3 and SrTi0.95Nb0.05O3 , respectively, which are the highest values reported for rare earth doped SrTiO3.

  1. Integration of SrTiO3 on crystallographically oriented epitaxial germanium for low-power device applications.

    Science.gov (United States)

    Hudait, Mantu K; Clavel, Michael; Zhu, Yan; Goley, Patrick S; Kundu, Souvik; Maurya, Deepam; Priya, Shashank

    2015-03-11

    SrTiO3 integration on crystallographic oriented (100), (110), and (111) epitaxial germanium (Ge) exhibits a potential for a new class of nanoscale transistors. Germanium is attractive due to its superior transport properties while SrTiO3 (STO) is promising due to its high relative permittivity, both being critical parameters for next-generation low-voltage and low-leakage metal-oxide semiconductor field-effect transistors. The sharp heterointerface between STO and each crystallographically oriented Ge layer, studied by cross-sectional transmission electron microscopy, as well as band offset parameters at each heterojunction offers a significant advancement for designing a new generation of ferroelectric-germanium based multifunctional devices. Moreover, STO, when used as an interlayer between metal and n-type (4 × 10(18) cm(-3)) epitaxial Ge in metal-insulator-semiconductor (MIS) structures, showed a 1000 times increase in current density as well as a decrease in specific contact resistance. Furthermore, the inclusion of STO on n-Ge demonstrated the first experimental findings of the MIS behavior of STO on n-Ge.

  2. Microscopic Observation of Ferroelectric Domains in SrTiO3 Using Birefringence Imaging Techniques under High Electric Fields

    Science.gov (United States)

    Manaka, Hirotaka; Nozaki, Hirofumi; Miura, Yoko

    2017-11-01

    Phase transitions in SrTiO3 between quantum paraelectric, coherent paraelectric, and electric-field-induced ferroelectric states are governed by tetragonal domains with quantum fluctuations. However, their characteristics are still unclear. To observe the electric-field-induced ferroelectric state using birefringence imaging techniques, we developed a suitable sample holder to apply high electric fields of up to E ≃ 5 kV/cm and temperatures down to T = 20 K. From birefringence imaging measurements of the ferroelectric LiNbO3 with varying electric field, distributions of the electric field in the sample stage were found to be negligible. In SrTiO3, a huge-retardance area corresponding to the ferroelectric domains appears at E > 2 kV/cm and T ≤ 60 K even though the paraelectric domains partially remain. Furthermore, the fast-axis direction rotates by 90° at the ferroelectric phase transition because of an electrostrictive effect in ferroelectrics. The phase diagram of the critical electric field and temperature agrees with previous reports obtained from dielectric and neutron scattering measurements.

  3. Microscopic observation of ferroelectric domains in SrTiO3 using birefringence imaging techniques under high electric fields

    International Nuclear Information System (INIS)

    Manaka, Hirotaka; Nozaki, Hirofumi; Miura, Yoko

    2017-01-01

    Phase transitions in SrTiO 3 between quantum paraelectric, coherent paraelectric, and electric-field-induced ferroelectric states are governed by tetragonal domains with quantum fluctuations. However, their characteristics are still unclear. To observe the electric-field-induced ferroelectric state using birefringence imaging techniques, we developed a suitable sample holder to apply high electric fields of up to E ≃ 5 kV/cm and temperatures down to T = 20 K. From birefringence imaging measurements of the ferroelectric LiNbO 3 with varying electric field, distributions of the electric field in the sample stage were found to be negligible. In SrTiO 3 , a huge-retardance area corresponding to the ferroelectric domains appears at E > 2 kV/cm and T ≤ 60 K even though the paraelectric domains partially remain. Furthermore, the fast-axis direction rotates by 90° at the ferroelectric phase transition because of an electrostrictive effect in ferroelectrics. The phase diagram of the critical electric field and temperature agrees with previous reports obtained from dielectric and neutron scattering measurements. (author)

  4. Research Update: Conductivity and beyond at the LaAlO3/SrTiO3 interface

    Directory of Open Access Journals (Sweden)

    S. Gariglio

    2016-06-01

    Full Text Available In this review, we focus on the celebrated interface between two band insulators, LaAlO3 and SrTiO3, that was found to be conducting, superconducting, and to display a strong spin-orbit coupling. We discuss the formation of the 2-dimensional electron liquid at this interface, the particular electronic structure linked to the carrier confinement, the transport properties, and the signatures of magnetism. We then highlight distinctive characteristics of the superconducting regime, such as the electric field effect control of the carrier density, the unique tunability observed in this system, and the role of the electronic subband structure. Finally we compare the behavior of Tc versus 2D doping with the dome-like behavior of the 3D bulk superconductivity observed in doped SrTiO3. This comparison reveals surprising differences when the Tc behavior is analyzed in terms of the 3D carrier density for the interface and the bulk.

  5. Anomalous Transport in Sketched Nanostructures at the LaAlO_{3}/SrTiO_{3} Interface

    Directory of Open Access Journals (Sweden)

    Guanglei Cheng

    2013-03-01

    Full Text Available The oxide heterostructure LaAlO_{3}/SrTiO_{3} supports a two-dimensional electron liquid with a variety of competing phases, including magnetism, superconductivity, and weak antilocalization because of Rashba spin-orbit coupling. Further confinement of this two-dimensional electron liquid to the quasi-one-dimensional regime can provide insight into the underlying physics of this system and reveal new behavior. Here, we describe magnetotransport experiments on narrow LaAlO_{3}/SrTiO_{3} structures created by a conductive atomic force microscope lithography technique. Four-terminal local-transport measurements on Hall bar structures about 10 nm wide yield longitudinal resistances that are comparable to the resistance quantum h/e^{2} and independent of the channel length. Large nonlocal resistances (as large as 10^{4}  Ω are observed in some but not all structures with separations between current and voltage that are large compared to the two-dimensional mean-free path. The nonlocal transport is strongly suppressed by the onset of superconductivity below about 200 mK. The origin of these anomalous transport signatures is not understood, but may arise from coherent transport defined by strong spin-orbit coupling and/or magnetic interactions.

  6. Topotactic Epitaxy of SrTiO3 Mesocrystal Superstructures with Anisotropic Construction for Efficient Overall Water Splitting.

    Science.gov (United States)

    Zhang, Peng; Ochi, Tomoya; Fujitsuka, Mamoru; Kobori, Yasuhiro; Majima, Tetsuro; Tachikawa, Takashi

    2017-05-02

    The higher-order structures of semiconductor-based photocatalysts play crucial roles in their physicochemical properties for efficient light-to-energy conversion. A novel perovskite SrTiO 3 mesocrystal superstructure with well-defined orientation of assembled cubic nanocrystals was synthesized by topotactic epitaxy from TiO 2 mesocrystals through a facile hydrothermal treatment. The SrTiO 3 mesocrystal exhibits three times the efficiency for the hydrogen evolution of conventional disordered systems in alkaline aqueous solution. It also exhibits a high quantum yield of 6.7 % at 360 nm in overall water splitting and even good durability up to 1 day. Temporal and spatial spectroscopic observations revealed that the synergy of the efficient electron flow along the internal nanocube network and efficient collection at the larger external cubes produces remarkably long-lived charges for enhanced photocatalysis. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Shubnikov-de Haas-like Quantum Oscillations in Artificial One-Dimensional LaAlO3/SrTiO3 Electron Channels

    Science.gov (United States)

    Cheng, Guanglei; Annadi, Anil; Lu, Shicheng; Lee, Hyungwoo; Lee, Jung-Woo; Huang, Mengchen; Eom, Chang-Beom; Irvin, Patrick; Levy, Jeremy

    2018-02-01

    The widely reported magnetoresistance oscillations in LaAlO3/SrTiO3 heterostructures have invariably been attributed to the Shubnikov-de Haas (SdH) effect, despite a pronounced inconsistency with low-field Hall resistance measurements. Here we report SdH-like resistance oscillations in quasi-1D electron waveguides created at the LaAlO3/SrTiO3 interface by conductive atomic force microscopy lithography. These oscillations can be directly attributed to magnetic depopulation of magnetoelectric subbands. Our results suggest that the SdH oscillations in 2D SrTiO3 -based systems may originate from naturally forming quasi-1D channels.

  8. Charge transfer mechanism for the formation of metallic states at the KTaO3/SrTiO3 interface

    KAUST Repository

    Nazir, Safdar

    2011-03-29

    The electronic and optical properties of the KTaO3/SrTiO3 heterointerface are analyzed by the full-potential linearized augmented plane-wave approach of density functional theory. Optimization of the atomic positions points at subordinate changes in the crystal structure and chemical bonding near the interface, which is due to a minimal lattice mismatch. The creation of metallic interface states thus is not affected by structural relaxation but can be explained by charge transfer between transition metal and oxygen atoms. It is to be expected that a charge transfer is likewise important for related interfaces such as LaAlO3/SrTiO3. The KTaO3/SrTiO3 system is ideal for disentangling the complex behavior of metallic interface states, since almost no structural relaxation takes place.

  9. Enhanced self-repairing capability of sol-gel derived SrTiO3/nano Al2O3 composite films

    International Nuclear Information System (INIS)

    Yao, Manwen; Peng, Yong; Xiao, Ruihua; Li, Qiuxia; Yao, Xi

    2016-01-01

    SrTiO 3 /nano Al 2 O 3 inorganic nanocomposites were prepared by using a conventional sol-gel spin coating process. For comparison, SrTiO 3 films doped by equivalent amount of sol-Al 2 O 3 have also been investigated. Aluminum deposited by using vacuum evaporation was used as the top electrode. The nanocomposites exhibited a significantly enhanced dielectric strength of 506.9 MV/m, which was increased by 97.4% as compared with the SrTiO 3 films doped with sol-Al 2 O 3 . The leakage current maintained of the same order of microampere until the ultimate breakdown of the nanocomposites. The excellent electrical performances are ascribed to the anodic oxidation reaction in origin, which can repair the internal and/or surface defects of the films.

  10. Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO3-δ Films on Silicon.

    Science.gov (United States)

    Gómez, Andrés; Vila-Fungueiriño, José Manuel; Moalla, Rahma; Saint-Girons, Guillaume; Gázquez, Jaume; Varela, María; Bachelet, Romain; Gich, Martí; Rivadulla, Francisco; Carretero-Genevrier, Adrián

    2017-10-01

    Materials that can couple electrical and mechanical properties constitute a key element of smart actuators, energy harvesters, or many sensing devices. Within this class, functional oxides display specific mesoscale responses which often result in great sensitivity to small external stimuli. Here, a novel combination of molecular beam epitaxy and a water-based chemical-solution method is used for the design of mechanically controlled multilevel device integrated on silicon. In particular, the possibility of adding extra functionalities to a ferroelectric oxide heterostructure by n-doping and nanostructuring a BaTiO 3 thin film on Si(001) is explored. It is found that the ferroelectric polarization can be reversed, and resistive switching can be measured, upon a mechanical load in epitaxial BaTiO 3- δ /La 0.7 Sr 0.3 MnO 3 /SrTiO 3 /Si columnar nanostructures. A flexoelectric effect is found, stemming from substantial strain gradients that can be created with moderate loads. Simultaneously, mechanical effects on the local conductivity can be used to modulate a nonvolatile resistive state of the BaTiO 3- δ heterostructure. As a result, three different configurations of the system become accessible on top of the usual voltage reversal of polarization and resistive states. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Substrate temperature study in the crystallinity of BaTiO{sub 3} thin films; Estudio de la temperatura de crecimiento sobre la cristalinidad en peliculas delgadas de BaTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Marquez-Herrera, Alfredo [Coordinacion Academica Region Altiplano (COARA), Universidad Autonoma de San Luis Potosi, San Luis Potosi (Mexico)]. E-mail: amarquez@mixteco.utm.mx; Hernandez-Rodriguez, Eric Noe; Zapata-Torres, Martin Guadalupe [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Legaria, Instituto Politecnico Nacional (Mexico)]. E-mails: noehmx@hotmail.com; mzapatat@ipn.mx; Cruz-Jauregui, Maria de la Paz [Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autonoma de Mexico (Mexico)]. E-mail: mcruz@cnyn.unam.mx; Melendez-Lira, Miguel angel [Centro de Investigacion y de Estudios Avanzados, Instituto Politecnico Nacional (Mexico)]. E-mail: mlira@fis.cinvestav.mx

    2013-07-15

    Ferroelectric thin films of BaTiO{sub 3} (BTO) were grown on quartz and nichrome substrates using a BaTiO{sub 3} target by RF-Sputtering technique. It was studied the effect of the substrate temperature in the crystallization of the material. These samples were compared with films deposited at room temperature and heat treated out of the growth Chamber. Their crystallinity were studied by X-ray diffraction. Additionally, the optical characterizations were carried out by UV-Vis spectrophotometer. The growth of thin films with substrate temperature allows the obtaining of crystalline materials at temperatures below those reported by other authors. [Spanish] Peliculas delgadas Ferroelectricas de BaTiO{sub 3} (BTO) se depositaron a partir de un blanco de BaTiO{sub 3} mediante la tecnica de RF-Sputtering (erosion catodica por radio frecuencia) sobre substratos de nicromel y cuarzo. Se estudio el efecto de la temperatura de sustrato in-situ en la cristalinidad del material durante su deposito. Estas muestras fueron comparadas con peliculas depositadas a temperatura ambiente y tratadas termicamente posterior al deposito fuera de la camara de crecimiento. El estudio de la cristalinidad fue realizado mediante la tecnica de difraccion de rayos-X. Adicionalmente, se llevaron a cabo caracterizaciones opticas mediante un espectrofotometro UV-Vis. El crecimiento de peliculas delgadas con temperatura de sustrato permite la obtencion de materiales cristalinos a temperaturas por debajo de las reportadas por otros autores.

  12. Resistive evaporation of superconducting Y-Ba-Cu-O thin films from a single source

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J.; Goldschmidt, D.

    1989-06-12

    A new evaporation method of high-temperature superconducting films, the /ital resistive vaporation/ /ital from/ /ital single/ /ital source/, isreported here for the first time. The source material, inserted into a tungstenboat in a conventional vacuum system, consisted of a pulverized mixture of Cu,YF/sub 3/, and BaF/sub 2/. The handling of the source material required only grindingand mixing of the raw materials. Its deposition onto SrTiO/sub 3/ substratesyielding superconducting films with properties very similar to those obtained ina layer-by-layer resistive evaporation of these materials. In particular, aresistive transition onset at 75 K and zero resistance at /similar to/40 K, and criticalcurrents of 2000 A/cm/sup 2/ at approx.10 K have been measured. The broad transition maybe attributed to a copper concentration gradient, as measured by Auger depthprofiling, or to a residual fluorine-rich phase.

  13. The role of Al, Ba, and Cd dopant elements in tailoring the properties of c-axis oriented ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Dilawar [Department of Physics GC University, Lahore 54000 (Pakistan); Center for Advanced Studies in Physics, GC University Lahore, Lahore 54000 (Pakistan); Butt, M.Z., E-mail: mzakriabutt@gmail.com [Center for Advanced Studies in Physics, GC University Lahore, Lahore 54000 (Pakistan); Arif, Bilal [Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah (Saudi Arabia); Yakuphanoglu, Fahrettin [Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey); Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah (Saudi Arabia)

    2017-02-01

    Highly c-axis oriented un-doped ZnO and Al-, Ba-, and Cd-doped ZnO thin films were successfully deposited on glass substrate employing sol-gel spin coating method. XRD analysis showed that all thin films possess hexagonal wurtzite structure with preferred orientation along c-axis. Field emission scanning electron microscope (FESEM) was used to study the morphology of thin films. The morphology consists of spherical and non-spherical shape grains. EDX analysis confirms the presence of O, Zn, Al, Ba, and Cd in the relevant thin films. The optical properties of thin films were studied using UV–Vis spectrometer. All thin films possess more than 85% optical transmittance in the visible region. Blue shift in optical band gap E{sub g} has been observed on doping with Al, whereas doping with Ba and Cd resulted in red shift of E{sub g}. Urbach energy E{sub u} of all doped ZnO thin films was found to have excellent correlation with their band gap energy E{sub g}. Moreover, E{sub g} increases while E{sub u} decreases on the increase in crystallite size D. Optical parameters E{sub g} and E{sub u} as well as structural parameters lattice strain and stacking fault probability also show excellent correlation with the B-factor or the mean-square amplitude of atomic vibrations of the dopant elements. Electrical conductivity measurement of the thin films was carried out using two-point probe method. The electrical conductivity was found to increase with the increase in crystallite orientation along c-axis.

  14. Infrared ellipsometry study of the confined electrons in a high-mobility γ-Al2O3/SrTiO3 heterostructure

    DEFF Research Database (Denmark)

    Yazdi-Rizi, M.; Marsik, P.; Mallett, B. P. P.

    2016-01-01

    of SrTiO3, we derive the sheet carrier density, Ns, the mobility, μ, and the depth profile of the carrier concentration. Notably, we find that Ns and the shape of the depth profile are similar as in LaAlO3/SrTiO3 (LAO/STO) heterostructures for which the itinerant carriers are believed to arise from...... a polar discontinuity. Despite an order of magnitude higher mobility in GAO/STO, as obtained from transport measurements, the derived mobility in the infrared range exhibits only a twofold increase. We interpret this finding in terms of the polaronic nature of the confined charge carriers in GAO...

  15. Transport and excitations in a negative-U quantum dot at the LaAlO3/SrTiO3 interface

    DEFF Research Database (Denmark)

    Prawiroatmodjo, Guenevere E. D. K.; Leijnse, Martin Christian; Trier, Felix

    2017-01-01

    In a solid-state host, attractive electron–electron interactions can lead to the formation of local electron pairs which play an important role in the understanding of prominent phenomena such as high Tc superconductivity and the pseudogap phase. Recently, evidence of a paired ground state without...... superconductivity was demonstrated at the level of single electrons in quantum dots at the interface of LaAlO3 and SrTiO3. Here, we present a detailed study of the excitation spectrum and transport processes of a gate-defined LaAlO3/SrTiO3 quantum dot exhibiting pairing at low temperatures. For weak tunneling...

  16. Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction

    OpenAIRE

    Liu, Z. Q.; Li, C. J.; Lü, W. M.; Huang, X. H.; Huang, Z.; Zeng, S. W.; Qiu, X. P.; Huang, L. S.; Annadi, A.; Chen, J. S.; Coey, J. M. D.; Venkatesan, T.; Ariando

    2013-01-01

    The relative importance of atomic defects and electron transfer in explaining conductivity at the crystalline LaAlO_{3}/SrTiO_{3} interface has been a topic of debate. Metallic interfaces with similar electronic properties produced by amorphous oxide overlayers on SrTiO_{3} [Y. Chen et al., Nano Lett. 11, 3774 (2011)NALEFD1530-698410.1021/nl201821j; S. W. Lee et al., Nano Lett. 12, 4775 (2012)NALEFD1530-698410.1021/nl302214x] have called in question the original polarization catastrophe model...

  17. Effect of substituted rare earth element in (Yb1-xNd x)Ba2Cu3O y thin film on growth orientation and superconducting properties

    International Nuclear Information System (INIS)

    Honda, R.; Ichino, Y.; Yoshida, Y.; Takai, Y.; Matsumoto, K.; Ichinose, A.; Kita, R.; Mukaida, M.; Horii, S.

    2005-01-01

    We studied the orientation and superconducting properties in (Yb 1-x Nd x )Ba 2 Cu 3 O y (Yb/Nd123) thin films as a function of Yb/Nd composition ratio x. As a results, we needed so high oxygen pressure as to increase x for obtaining the c-axis oriented films. J c -B curves in the Yb/Nd123 thin films were superior to that in YBa 2 Cu 3 O y thin film. Since a RE fluctuation in a composition in the Yb/Nd123 thin films was observed with TEM-EDX, we speculated the pinning centers in the Yb/Nd123 thin films were strongly affected by the RE fluctuation

  18. Electron Transport in SrTio3 Accumulation Layers and Semiconductor Nanocrystal Films

    Science.gov (United States)

    Fu, Han

    In this thesis, we study two subjects: SrTiO3 (STO) accumulation layers and films made of semiconductor nanocrystals (NCs), which are important for technological applications. We start from the low temperature conductivity of electron accumulation layers induced by the very strong electric field at the surface of STO sample. Due to the strongly nonlinear lattice dielectric response, the three-dimensional density of electrons n(z) in such a layer decays with the distance from the surface z very slowly as n(z) ≃ 1/z12/7 . We show that when the mobility is limited by the surface scattering the contribution of such a tail to the conductivity diverges at large z because of growing time electrons need to reach the surface. We explore truncation of this divergence by the finite sample width, by the bulk scattering rate, by the back gate voltage, or by the crossover to the bulk linear dielectric response with the dielectric constant kappa. As a result we arrive at the anomalously large mobility, which depends not only on the rate of the surface scattering, but also on the physics of truncation. Similar anomalous behavior is found for the Hall factor, the magnetoresistance, and the thermopower. For the second part, we extend to the cases of spherical and cylindrical geometries, and more complicated planar structures. For the planar case, we study overlapping accumulation layers in GdTiO3/STO/GdTiO 3 quantum wells and electron gases created by spill-out from NSTO (heavily n-type doped STO) layers into STO. Generalization of our approach to a spherical donor cluster creating a big Thomas-Fermi atom with electrons in STO brings us to the problem of supercharged nuclei. It is known that for an atom with nuclear charge Ze, where Z > 170, electrons collapse onto the nucleus resulting in a net charge Zn theories of roughness scattering so far dealt only with the small-density single subband two-dimensional (2D) electron gas. Here we develop a theory of roughness scattering limited mobility for the multisubband large concentration case. We show that with growing 2D electron concentration N the surface dimensionless conductivity sigma/(2e2/h) first decreases as ≃ N-6/5 and then saturates as ˜ (LambdaaB/Delta 2) >> 1, where Lambda and Delta are the characteristic length and height of the surface roughness, aB is the effective Bohr radius. This means that in spite of the shrinkage of the 2D electron gas width and the related increase of the scattering rate, the 2D electron gas remains a good metal. Thus, there is no re-entrant metal-insulator transition at high concentrations conjectured by Das Sarma and Hwang [PRB 89, 121413 (2014)]. The expression of surface relaxation time can be generalized to the STO case where the dielectric response is nonlinear. We find that there is no reentrant metal-insulator transition, either, in STO accumulation layers at experimentally available large N.. Finally, we switch to the study of NC films. We focus on the variable-range hopping of electrons in semiconductor NC films below the critical doping concentration nc at which films become metallic. The hopping conductivity is then described by the Efros-Shklovskii law which depends on the localization length of electrons. We study how the localization length grows with the doping concentration n in the film of touching NCs. For that we calculate the electron transfer matrix element t(n) between neighboring NCs for two models when NCs touch by small facets or just one point. We study two sources of disorder: variations of NC diameters and random Coulomb potentials originating from random numbers of donors in NCs. We use the ratio of t(n) to the disorder-induced NC level dispersion to find the localization length of electrons due to the multi-step elastic co-tunneling process. We find three different phases at n < nc depending on the strength of disorder, the material, sizes of NCs and their facets: 1) "insulator" where the localization length of electrons increases monotonically with n and 2) "oscillating insulator" when the localization length (and the conductivity) oscillates with n from the insulator base and 3) "blinking metal" where the localization length periodically diverges. The first two phases were seen experimentally and we discuss how one can see the more exotic third one. In all three the localization length diverges at n = nc. This allows us to find nc..

  19. Correlation of High Magnetoelectric Coupling with Oxygen Vacancy Superstructure in Epitaxial Multiferroic BaTiO3-BiFeO3 Composite Thin Films

    OpenAIRE

    Lorenz, Michael; Wagner, Gerald; Lazenka, Vera; Schwinkendorf, Peter; Bonholzer, Michael; Van Bael, Margriet J.; Vantomme, Andr?; Temst, Kristiaan; Oeckler, Oliver; Grundmann, Marius

    2016-01-01

    Epitaxial multiferroic BaTiO3-BiFeO3 composite thin films exhibit a correlation between the magnetoelectric (ME) voltage coefficient αME and the oxygen partial pressure during growth. The ME coefficient αME reaches high values up to 43 V/(cm·Oe) at 300 K and at 0.25 mbar oxygen growth pressure. The temperature dependence of αME of the composite films is opposite that of recently-reported BaTiO3-BiFeO3 superlattices, indicating that strain-mediated ME coupling alone cannot explain its origin. ...

  20. Tunnel and electrostatic coupling in graphene-LaAlO3/SrTiO3 hybrid systems

    Directory of Open Access Journals (Sweden)

    I. Aliaj

    2016-06-01

    Full Text Available We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep 2-dimensional electron system. At low graphene-oxide inter-layer bias, the two electron systems are electrically isolated, despite their small spatial separation. A very efficient reciprocal gating of the two neighboring 2-dimensional systems is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic field-effects and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly coupled bilayer systems is discussed.

  1. Structural conditions that leads to photoluminescence emission in SrTiO3: An experimental and theoretical approach

    Science.gov (United States)

    Longo, V. M.; de Figueiredo, A. T.; de Lázaro, S.; Gurgel, M. F.; Costa, M. G. S.; Paiva-Santos, C. O.; Varela, J. A.; Longo, E.; Mastelaro, V. R.; DE Vicente, F. S.; Hernandes, A. C.; Franco, R. W. A.

    2008-07-01

    Complex cluster [TiO5ṡVOz] and [SrO11ṡVOz] (where VOz=VOX, VO•, VO••) vacancies were identified in disordered SrTiO3 powders prepared by the polymeric precursor method, based on experimental measurements by x-ray absorption near edge structure spectroscopy. The paramagnetic complex states of [TiO5ṡVO•] and [SrO11ṡVO•] with unpaired electrons were confirmed by electron paramagnetic resonance spectroscopy. The disordered powders showed strong photoluminescence at room temperature. Structural defects of disordered powders, in terms of band diagram, density of states, and electronic charges, were interpreted using high-level quantum mechanical calculations in the density functional framework. The four periodic models used here were consistent with the experimental data and explained the presence of photoluminescence.

  2. Coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO3/In memristive devices

    International Nuclear Information System (INIS)

    Yang, M; Bao, D H; Li, S W

    2013-01-01

    Memristive devices are triggering innovations in the fields of nonvolatile memory, digital logic, analogue circuits, neuromorphic engineering, and so on. Creating new memristive devices with unique characteristics would be significant for these emergent applications. Here we report the coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO 3 (NSTO)/In memristive devices. The Pt/NSTO interface contributes a nonvolatile resistive switching behaviour, whereas the NSTO/In interface displays a volatile hysteresis loop. Combining the two interfaces in the Pt/NSTO/In devices leads to the unique coexistence of nonvolatility and volatility. The results imply more opportunities to invent new memristive devices by engineering both interfaces in metal/insulator/metal structures. (paper)

  3. Photoinduced modulation and relaxation characteristics in LaAlO3/SrTiO3 heterointerface

    KAUST Repository

    Jin, K. X.

    2015-03-05

    We report the modulation and relaxation characteristics in the two-dimensional electron gas system at LaAlO3/SrTiO3 heterointerface induced by the ultraviolet light illumination (365 nm). The suppression of Kondo effect at the interface illuminated by the light originates from the light irradiation-induced decoherence effect of localized states. It is interesting to note that the persistent and transient photoinduced effects are simultaneously observed and the photoinduced maximum change values in resistance are 80.8% and 51.4% at T = 20 K, respectively. Moreover, the photoinduced relaxation processes after the irradiation are systematically analyzed using the double exponential model. These results provide the deeper understanding of the photoinduced effect and the experimental evidence of tunable Kondo effect in oxides-based two-dimensional electron gas systems.

  4. Thermodynamic and kinetic properties of hydrogen defect pairs in SrTiO3 from density functional theory

    DEFF Research Database (Denmark)

    Bork, Nicolai Christian; Bonanos, Nikolaos; Rossmeisl, Jan

    2011-01-01

    V compared to two non-interacting H defects. The main cause of the net attractive potential is elastic defect interactions through lattice deformation. Two possible diffusion paths for the hydrogen defect pair are investigated and are both determined to be faster than the corresponding diffusion path...... for single hydrogen atoms. Finally, we set up a simple model to determine the contribution from the double hydrogen defect to the total hydrogen flux, and find the double defect to be the main diffusing species at temperatures below ca. 400 °C. Post submission infrared absorption experiments show excellent......A density functional theory investigation of the thermodynamic and kinetic properties of hydrogen–hydrogen defect interactions in the cubic SrTiO3 perovskite is presented. We find a net attraction between two hydrogen atoms with an optimal separation of ∼2.3 Å. The energy gain is ca. 0.33 e...

  5. The electronic and optical properties of carbon-doped SrTiO3: Density functional characterization

    Directory of Open Access Journals (Sweden)

    N. Li

    2012-09-01

    Full Text Available The electronic properties and optical activities of C-doped cubic SrTiO3 in perovskite structure are studied by first-principles calculation. The calculated formation energies show that the substitutional C impurity is preferentially occupied at the Ti site. For C@O, the C impurity introduces spin-polarized gap states, and the associated electron excitations among the valence band, the conduction band and the gap states produce various visible-light absorption thresholds. For C@Ti, some C gap states of s-character appear near the bottom of the conduction band, which result in the lowered optical transition energy and thus the visible light absorption as observed in the experiment.

  6. High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

    KAUST Repository

    Nazir, Safdar

    2011-08-05

    The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.

  7. The metallic interface between the two band insulators LaGaO3 and SrTiO3

    KAUST Repository

    Nazir, Safdar

    2011-06-28

    The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.

  8. Transition metal substituted SrTiO3 perovskite oxides as promising functional materials for oxygen sensor

    Science.gov (United States)

    Misra, Sunasira

    2012-07-01

    Modern industries employ several gases as process fluids. Leakage of these gases in the operating area could lead to undesirable consequences. Even in chemical industries, which use large quantities of inert gases in confined areas, accidental leakage of these process gases would result in the reduction of oxygen partial pressure in atmospheric air. For instance, large amounts of gaseous nitrogen and argon are used in pharmaceutical industries, gas filling/bottling plants, operating area of Fast Breeder reactors, etc. Fall of concentration of oxygen in air below 17% could lead to life risk (Asphyxiation) of the working personnel that has to be checked well in advance. Further, when the leaking gas is of explosive nature, its damage potential would be very high if its concentration level in air increases beyond its lower explosive limit. Surveillance of the ambient within these industries at the critical areas and also in the environment around them for oxygen therefore becomes highly essential. Sensitive and selective gas sensors made of advanced materials are required to meet this demand of monitoring environmental pollution. The perovskite class of oxides (ABO3) is chemically stable even at high temperatures and can tolerate large levels of dopants without phase transformations. The electronic properties of this parent functional material can be tailored by adding appropriate dopants that exhibit different valence states. Aliovalent transition metal substituted SrTiO3 perovskites are good mixed ionic and electronic conductors and potential candidates for sensing oxygen at percentage level exploiting their oxygen pressure dependent electrical conductivity. This paper presents the preparation, study of electrical conductivity and oxygen-sensing characteristics of iron and cobalt substituted SrTiO3.

  9. Metal organic chemical vapor deposition of superconducting YBa2Cu3O7-x thin films

    Science.gov (United States)

    Zawadzki, P. A.; Tompa, G. S.; Norris, P. E.; Chern, C. S.; Caracciolo, R.; Kear, B. H.; Noh, D. W.; Gallois, B.

    1990-04-01

    The discovery of YBCO superconductors has stimulated a great deal of scientific and technological research into thin films of these materials. Because the MOCVD technique is known to produce high quality films in the III/V and II/VI material groups, our approach has been to apply the method to superconducting thin films. Thin films were grown in a vertical high speed (0 2000 rpm) rotating disk reactor. The source materials were metal β-diketonates kept at temperatures in excess of 100° in order to obtain growth rates of 0.3 to 0.5 μm/hr. The precursors were transported to the chamber with a nitrogen carrier and injected separately in order to avoid any gas phase reactions. The chamber pressure was maintained at 76 Torr with an oxygen partial pressure of 38 Torr. A resistance heater was used to keep the substrate temperature at 500° YBa2Cu3O7- x films were deposited simultaneously on a variety of substrates such as (100) MgO, (1-102) sapphire, (100) SrTiO3 and (100) YSZ. Full XPS spectra were collected for the binary oxides. The scans demonstrate the existence of Y2O3, BaO, and CuO with the correct valence state for the metallic species. Energy dispersive analysis of x-ray (EDAX) was used to determine film compositions by comparing EDAX spectral intensity to a known superconducting standard. Appropriate changes were made in the precursor flows to correct the stoichiometry. The as-grown films were dark brown and semi-transparent. Cross-sectional SEM photomicrographs revealed an ordered columnar structure. After annealing at 950 980° however, the films on (100) SrTiO3 appeared dull black and opaque. The surface morphology exhibited smooth large plate-like grains. X-ray data clearly display an orthorhombic phase, with c-axis perpendicular to the substrate surface. Four point resistance measurements for films on (100) SrTiO3 show the onset of superconductivity at 90 K with a complete loss of resistance at 88 K. This sharp (≤2K) transition shows the high quality

  10. An epitaxial transparent conducting perovskite oxide: double-doped SrTiO3

    NARCIS (Netherlands)

    Ravichandran, Jayakanth; Siemons, W.; Heijmerikx, Herman; Huijben, Mark; Majumdar, Arun; Ramesh, Ramamoorthy

    2010-01-01

    Epitaxial thin films of strontium titanate doped with different concentrations of lanthanum and oxygen vacancies were grown on LSAT substrates by pulsed laser deposition technique. Films grown with 5−15% La doping and a critical growth pressure of 1−10 mTorr showed high transparency (>70−95%) in the

  11. Nickel-ceria infiltrated Nb-doped SrTiO3 for low temperature SOFC anodes and analysis on gas diffusion impedance

    DEFF Research Database (Denmark)

    Abdul Jabbar, Mohammed Hussain; Høgh, Jens Valdemar Thorvald; Jacobsen, Torben

    2012-01-01

    This report concentrates on high performance anodes appropriate for SOFCs operating at low temperatures (400–600 °C). Symmetrical cells were made by screen printing of Nb-doped SrTiO3 (STN) on both sides of a dense ScYSZ electrolyte. Backbones I (36% porosity) and II (47% porosity) were obtained...

  12. Degradation of the interfacial conductivity in LaAlO3/SrTiO3 heterostructures during storage at controlled environments

    DEFF Research Database (Denmark)

    Trier, Felix; Christensen, Dennis; Chen, Yunzhong

    2013-01-01

    The remarkable discovery of a two-dimensional electron gas confined at the interface of the two oxide band-insulators SrTiO3 (STO) and LaAlO3 (LAO) has spurred a great interest in the heterostructure leading to the discovery of a plethora of other exciting properties. Recently, the formation...

  13. Influence of charge compensation mechanisms on the sheet electron density at conducting LaAlO3/SrTiO3-interfaces

    NARCIS (Netherlands)

    Gunkel, F.; Brinks, Peter; Hoffmann-Eifert, S.; Dittmann, R.; Huijben, Mark; Kleibeuker, J.E.; Koster, Gertjan; Rijnders, Augustinus J.H.M.

    2012-01-01

    The equilibrium conductance of LaAlO3/SrTiO3 (LAO/STO)-heterointerfaces was investigated at high temperatures (950¿K-1100¿K) as a function of ambient oxygen partial pressure (pO2). Metallic LAO/STO-interfaces were obtained for LAO grown on STO single crystals as well as on STO-buffered

  14. Imposed quasi-layer-by-layer homoepitaxial growth of SrTiO3 films by large area pulsed laser deposition

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini

    2011-01-01

    The homoepitaxial growth of SrTiO3 (STO) films was investigated by a large-area pulsed laser deposition (PLD), which was in-situ monitored by a high pressure reflective high energy electron diffraction. By combining a conventionally continuous film deposition with a followed interval relaxation, ...

  15. Hard x-ray photoemission and density functional theory study of the internal electric field in SrTiO3/LaAlO3 oxide heterostructures

    NARCIS (Netherlands)

    Slooten, E.; Zhong, Zhicheng; Molegraaf, Hajo; Eerkes, P.D.; de Jong, S.; Massee, F.; van Heumen, E.; Kruize, Michelle; Wenderich, Sander; Kleibeuker, J.E.; Gorgoi, M.; Hilgenkamp, Johannes W.M.; Brinkman, Alexander; Huijben, Mark; Rijnders, Augustinus J.H.M.; Blank, David H.A.; Koster, Gertjan; Kelly, Paul J.; Golden, M.S.

    2013-01-01

    A combined experimental and theoretical investigation of the electronic structure of the archetypal oxide heterointerface system LaAlO3 on SrTiO3 is presented. High-resolution, hard x-ray photoemission is used to uncover the occupation of Ti 3d states and the relative energetic alignment—and hence

  16. Aerosol deposition of Ba0.8Sr0.2TiO3 thin films

    Directory of Open Access Journals (Sweden)

    Branković Zorica

    2009-01-01

    Full Text Available In this work we optimized conditions for aerosol deposition of homogeneous, nanograined, smooth Ba0.8Sr0.2TiO3 thin films. Investigation involved optimization of deposition parameters, namely deposition time and temperature for different substrates. Solutions were prepared from titanium isopropoxide, strontium acetate and barium acetate. Films were deposited on Si (1 0 0 or Si covered by platinum (Pt (1 1 1 /Ti/SiO2/Si. Investigation showed that the best films were obtained at substrate temperature of 85ºC. After deposition films were slowly heated up to 650ºC, annealed for 30 min, and slowly cooled. Grain size of BST films deposited on Si substrate were in the range 40-70 nm, depending on deposition conditions, while the same films deposited on Pt substrates showed mean grain size in the range 35-50 nm. Films deposited under optimal conditions were very homogeneous, crackfree, and smooth with rms roughness lower than 4 nm for both substrates.

  17. Correlation of structural and electrical properties of PrBaCo2O5+δ thin films at high temperature

    Directory of Open Access Journals (Sweden)

    Brennan Mace

    2018-03-01

    Full Text Available Epitaxial PrBaCo2O5+δ (PBCO, 0≤ δ ≤ 1 thin films were deposited by pulsed laser deposition. The structural and electrical properties of the films were characterized at high temperatures in reduced environments. X-ray diffraction scans at high temperature in reduced environment show potential structural transitions of PBCO as evidenced by both a large (Δl = 0.335 nm expansion of the out-plane (c-axis lattice, due to thermal and chemical expansion, and a step in the expansion of the c-axis lattice parameter. These transitions indicate the presence of oxygen vacancy ordering as the oxygen content in the films is reduced. Resistivity measurements under the same environments also show evidence of sharp transitions related with the structural transformations. This study helps the understanding of the structure-property relationship of PBCO at high temperature and provides important technological information to utilize these materials for solid oxide fuel cell at intermediate temperatures.

  18. Electroresistance and magnetoresistance in La0.9Ba0.1MnO3 thin films

    International Nuclear Information System (INIS)

    Hu, F.X.; Gao, J.; Wang, Z.H.

    2006-01-01

    The electroresistance and magnetoresistance effects have been investigated in La 0.9 Ba 0.1 MnO 3 epitaxial thin films. Tensile strain caused by substrate mismatch makes the Curie temperature T C of the film at ∼300 K. The influence of an applied dc-current on the resistance in the absence of a magnetic field was studied. Significant change of the peak resistance at different currents was found. The reduction of the peak resistance reaches ∼27% with an electric current density up to 1.3 x 10 5 A cm -2 . We also studied colossal magnetoresistance (CMR) effect in the films. Applying a magnetic field of 2 T could lead to a magnetoresistance as large as 42%. The reduction of resistance caused by a current density ∼1.3 x 10 5 A cm -2 was found to be equivalent to the CMR effect caused by 1.5 T near T C . The phenomenon that the resistance in CMR manganites could be easily controlled by the electric current should be of high interest for both fundamental research and practical applications

  19. Synthesis of BaW2O7-ethylene glycol inorganic-organic hybrid and its topochemical transformation to thin WS2 nanoplates

    Science.gov (United States)

    Afanasiev, Pavel

    2018-02-01

    A novel inorganic-organic hybrid barium tungstate - ethylene glycol Ba(C2H6O2)W2O7 phase has been prepared by non-aqueous precipitation and characterized. According to powder X-ray diffraction, the solid has an orthorhombic lattice (a = b = 6.415 Å, c = 13.05 Å) and represents a derivative of the H2W2O7 lamellar acid. The Ba(C2H6O2)W2O7 hybrid material is a layered solid and crystallizes as thin plates, which can be further topotacticaly transformed to few-layer WS2 nanoplates. Tungsten sulfide as obtained possesses high specific surface area and increased defectness of layers. Thin-layer WS2 materials as prepared show advantageous properties as hydrogen evolution electrocatalysts, or in combination with TiO2 as co-catalysts for photo catalytic hydrogen production from methanol.

  20. High resolution imaging of La0.5Ba0.5MnO-LaMnO superlattice

    International Nuclear Information System (INIS)

    Shapoval, O.; Belenchuk, A.; Verbeeck, J.; Moshnyaga, V.

    2013-01-01

    Full text: Artificial low dimensional systems of tailored on atomic layer level manganites is a very promising class of materials for future spintronic applications. The high resolution transmission electron microscopy imaging provides a powerful approach to extract structural, chemical and functional information on atomic level in a real space. Recently, we have reported on the Metalorganic Aerosol Deposition synthesis and properties of superlattices (SL) composed from (LaMnO 3 ) n and (La 0.5 Ba 0.5 MnO 3 ) 2n with n=1-2 of perovskite monolayers. The functional properties of digitally synthesized SL are similar to the optimal doped 'bulk' thin film material. The similarities between their properties can be interpreted in frame of the many-body interactions responsible for the properties of the single-layer and bilayer manganites. This work presents the systematic studies of atomically resolved structure of (LaMnO 3 ) n /(La 0.5 Ba 0.5 MnO 3 ) 2n , n=1 by high angle annular dark field scanning transmission electron microscopy (HAADF STEM) and electron energy loss spectroscopy (EELS). The combination of atomic-resolution Z-contrast and EELS represents a powerful method to link the atomic and electronic structure of solids with macroscopic properties. All images were obtained along orientations and low magnification one shows an overview of a whole 40-nm thick structure, whereas magnified high-resolution images demonstrate an epitaxial growth of LBMO/LMO superlattice on SrTiO 3 substrate. The SL-substrate interface is coherent and free of defects, but reveals a high level of La diffusion into SrTiO 3 . EELS together with STEM are used for probing of a local chemical composition as well as a local electronic state of transition metals and oxygen. Small modulations in the La and Ba EELS signals, which are corresponded to the LBMO and LMO layers, can be observed. The observed features at the substrate interface as well as the SL periodicity in EELS profiles are

  1. Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Jung-Sheng Huang

    2014-01-01

    Full Text Available Both β-FeSi2 and BaSi2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc I-V characteristics of n-Si/i-βFeSi2/p-Si and n-Si/i-BaSi2/p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I-V curves. The optimum conversion efficiency of n-Si/i-βFeSi2/p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi2/p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (η is 20.6%. These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

  2. Supercurrents in HgBa{sub 2}CaCu{sub 2}O{sub 6+{delta}} and TlBa{sub 2}CaCu{sub 2}O{sub 7} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gapud, A.A.; Wu, J.Z.; Fang, L.; Yan, S.L.; Xie, Y.Y. [Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045-2151 (United States); Siegal, M.P.; Overmyer, D.L. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    1999-06-01

    The availability of high-quality epitaxial thin films of HgBa{sub 2}CaCu{sub 2}O{sub 6+{delta}} (Hg-1212) and TlBa{sub 2}CaCu{sub 2}O{sub 7} (Tl-1212) with high critical current densities (J{sub c}) has made it possible to examine and compare the J{sub c} of these species. Results reveal that the J{sub c} of 1212 species have very similar temperature behavior at low fields, strongly suggesting that the 30 K shift in critical temperature (T{sub c}) induced by the exchange of Hg and Tl in the 1212 structure is due largely to a change in charge carrier density and/or electronic band structure. {copyright} {ital 1999 American Institute of Physics.}

  3. Enhancing the Electron Mobility via Delta-Doping in SrTiO3

    Energy Technology Data Exchange (ETDEWEB)

    Kozuka, Y.

    2011-08-11

    We fabricated high-mobility {delta}-doped structures in SrTiO{sub 3} thin films in order to investigate the low temperature electronic transport properties of confined carriers in this system. An enhancement of the electron mobility above the bulk value was observed as the doped layer thickness decreased. High-field Hall measurements revealed that this mobility enhancement originates from higher-mobility electrons in the undoped clean regions, which have quantum-mechanically broadened from the doped layer. Because of the absence of apparent lattice misfit between the layers, this structure is highly suitable for investigating two-dimensional electron gases in SrTiO{sub 3}

  4. La(0.8)Sr(0.2)MnO(3-δ) decorated with Ba(0.5)Sr(0.5)Co(0.8)Fe(0.2)O(3-δ): a bifunctional surface for oxygen electrocatalysis with enhanced stability and activity.

    Science.gov (United States)

    Risch, Marcel; Stoerzinger, Kelsey A; Maruyama, Shingo; Hong, Wesley T; Takeuchi, Ichiro; Shao-Horn, Yang

    2014-04-09

    Developing highly active and stable catalysts based on earth-abundant elements for oxygen electrocatalysis is critical to enable efficient energy storage and conversion. In this work, we took advantage of the high intrinsic oxygen reduction reaction (ORR) activity of La(0.8)Sr(0.2)MnO(3-δ) (LSMO) and the high intrinsic oxygen evolution reaction (OER) activity of Ba(0.5)Sr(0.5)Co(0.8)Fe(0.2)O(3-δ) (BSCF) to develop a novel bifunctional catalyst. We used pulsed laser deposition to fabricate well-defined surfaces composed of BSCF on thin-film LSMO grown on (001)-oriented Nb-doped SrTiO3. These surfaces exhibit bifunctionality for oxygen electrocatalysis with enhanced activities and stability for both the ORR and OER that rival the state-of-the-art single- and multicomponent catalysts in the literature.

  5. Electrical properties of resistive switches based on Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3} thin films prepared by RF co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marquez H, A.; Hernandez R, E.; Zapata T, M. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Calzada Legaria No. 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Guillen R, J. [Instituto Tecnologico y de Estudios Superiores de Monterrey, Campus Tampico, Puerto Industrial, Altamira 89600, Tamaulipas (Mexico); Cruz, M. P. [UNAM, Centro de Nanociencias y Nanotecnologia, Km. 107 Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico); Calzadilla A, O. [Universidad de la Habana, Facultad de Fisica-IMRE, San Lazaro y L. Municipio Plaza de la Revolucion, La Habana, Cuba (Cuba); Melendez L, M., E-mail: amarquez@ipn.m [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, A. P. 14-740, 07000 Mexico D. F. (Mexico)

    2010-07-01

    In this work, was proposed the use of Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3}(0{<=}x{<=}1) thin films for the construction of metal-insulator-metal heterostructures; and their great potential for the development of non-volatile resistance memories (ReRAM) is shown. The deposition of Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3} thin films was done by the RF co-sputtering technique using two magnetron sputtering cathodes with BaTiO{sub 3} and SrTiO{sub 3} targets. The chemical composition (x parameter) in the deposited Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3} thin films was varied through the RF powder applied to the targets. The constructed metal-insulator-metal heterostructures were Al/Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3}/nichrome. The I-V measurements of the heterostructures showed that their hysteretic characteristics change depending on the Ba/Sr ratio of the Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3} thin films; the Ba/Sr ratio was determined by employing the energy dispersive spectroscopy; Sem micrographs showed that Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3} thin films were uniform without cracks or pinholes. Additionally, the analysis of the X-ray diffraction results indicated the substitutional incorporation of Sr into the BaTiO{sub 3} lattice and the obtainment of crystalline films for the entire range of the x values. (Author)

  6. Anisotropic strain relaxation in (Ba0.6Sr0.4)TiO3 epitaxial thin films

    Science.gov (United States)

    Simon, W. K.; Akdogan, E. K.; Safari, A.

    2005-05-01

    We have studied the evolution of anisotropic epitaxial strains in ⟨110⟩-oriented (Ba0.60Sr0.40)TiO3 paraelectric (m3m) thin films grown on orthorhombic (mm2) ⟨100⟩-oriented NdGaO3 by high-resolution x-ray diffractometry. All the six independent components of the three-dimensional strain tensor were measured in films with 25-1200-nm thickness, from which the principal stresses and strains were obtained. Pole figure analysis indicated that the epitaxial relations are [001]m3m‖[001]mm2 and [1¯10]m3m‖[010]mm2 in the plane of the film, and [110]m3m‖[100]mm2 along the growth direction. The dislocation system responsible for strain relief along [001] has been determined to be ∣b ∣(001)=3/4∣b∣. Strain relief along the [1¯10] direction, on the other hand, has been determined to be due to a coupled mechanism given by ∣b∣(1¯10)=∣b∣ and ∣b∣(1¯10)=√3 /4∣b∣. Critical thicknesses, as determined from nonlinear regression using the Matthews-Blakeslee equation, for misfit dislocation formation along [001] and [1¯10] direction were found to be 5 and 7 nm, respectively. The residual strain energy density was calculated as ˜2.9×106J/m3 at 25 nm, which was found to relax an order of magnitude by 200 nm. At 200 nm, the linear dislocation density along [001] and [1¯10] are ˜6.5×105 and ˜6×105cm-1, respectively. For films thicker than 600 nm, additional strain relief occurred through surface undulations, indicating that this secondary strain-relief mechanism is a volume effect that sets in upon cooling from the growth temperature.

  7. High field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interface

    Science.gov (United States)

    Fujiwara, Kohei; Nishihara, Kazuki; Shiogai, Junichi; Tsukazaki, Atsushi

    2016-08-01

    A perovskite oxide, BaSnO3, has been classified as one of transparent conducting materials with high electron mobility, and its application for field-effect transistors has been the focus of recent research. Here we report transistor operation in BaSnO3-based heterostructures with atomically smooth surfaces, fabricated on SrTiO3 substrates by the (Sr,Ba)SnO3 buffer technique. Indeed, modulation of band profiles at the channel interfaces with the insertion of wide bandgap (Sr,Ba)SnO3 as a barrier layer results in a significant improvement of field-effect mobility, implying effective carrier doping at the regulated heterointerface. These results provide an important step towards realization of high-performance BaSnO3-based field-effect transistors.

  8. High field-effect mobility at the (Sr,BaSnO3/BaSnO3 interface

    Directory of Open Access Journals (Sweden)

    Kohei Fujiwara

    2016-08-01

    Full Text Available A perovskite oxide, BaSnO3, has been classified as one of transparent conducting materials with high electron mobility, and its application for field-effect transistors has been the focus of recent research. Here we report transistor operation in BaSnO3-based heterostructures with atomically smooth surfaces, fabricated on SrTiO3 substrates by the (Sr,BaSnO3 buffer technique. Indeed, modulation of band profiles at the channel interfaces with the insertion of wide bandgap (Sr,BaSnO3 as a barrier layer results in a significant improvement of field-effect mobility, implying effective carrier doping at the regulated heterointerface. These results provide an important step towards realization of high-performance BaSnO3-based field-effect transistors.

  9. Growth temperature dependence of flux pinning properties in ErBa2Cu3Oy thin films with nano-rods

    International Nuclear Information System (INIS)

    Haruta, M.; Sueyoshi, T.; Fujiyoshi, T.; Mukaida, M.; Kai, H.; Matsumoto, K.; Mele, P.; Maeda, T.; Horii, S.

    2011-01-01

    Nano-rods were introduced into ErBa 2 Cu 3 O y thin films to improve J c . Pinning properties depended on the growth temperature of the films. Morphology of nano-rods was affected by the growth temperature. The growth temperature is important to achieve high in-field J c 's. Irreversibility lines and distributions of local critical current density (J cl ) based on the percolation transition model were affected by the growth temperature (T s ) in 3.5 wt.%-BaNb 2 O 6 -doped ErBa 2 Cu 3 O y thin films. The vortex-Bose-glass-like state appeared by the introduction of nano-rods, and this vortex state was affected by T s . The shape and width of the J cl distribution strongly depended on T s . These results are probably caused by variations of the density and the growth direction for nano-rods reflecting T s . The growth temperature is an important factor to achieve higher critical current properties under magnetic fields for coated conductors of rare-earth-based cuprates with nano-rods.

  10. Band-gap narrowing and magnetic behavior of Ni-doped Ba(Ti0.875Ce0.125)O3 thin films

    Science.gov (United States)

    Zhou, Wenliang; Deng, Hongmei; Yu, Lu; Yang, Pingxiong; Chu, Junhao

    2015-11-01

    Band-gap narrowing and magnetic effects have been observed in a Ni-doped Ba(Ti0.875Ce0.125)O3 (BTC) thin film. Structural characterizations and microstructural analysis show that the as-prepared Ba(Ti0.75Ce0.125Ni0.125)O3-δ (BTCN) thin film exhibits a cubic perovskite structure with an average grain size of 25 nm. The Ce doping at the Ti-site results in an increasing perovskite volume to favour an O-vacancy-stabilized Ni2+ substitution. Raman spectroscopy, however, shows the cubic symmetry of crystalline structures is locally lowered by the presence of dopants, significantly deviating from the ideal Pm3m space group. Moreover, BTCN presents a narrowed band-gap, much smaller than that of BaTiO3 and BTC, due to new states of both the highest occupied molecular orbital and the lowest unoccupied molecular orbital in an electronic structure with the presence of Ni. Also, magnetic enhancement driven by co-doping has been confirmed in the films, which mainly stems from the exchange interaction of Ni2+ ions via an electron trapped in a bridging oxygen vacancy. These findings may open an avenue to discover and design optimal perovskite compounds for solar-energy devices and information storage.

  11. Growth temperature dependence of flux pinning properties in ErBa{sub 2}Cu{sub 3}O{sub y} thin films with nano-rods

    Energy Technology Data Exchange (ETDEWEB)

    Haruta, M., E-mail: haruta.masakazu@kochi-tech.ac.jp [Kochi University of Technology, Tosayamada-cho, Kami-shi, Kochi 782-8502 (Japan); Sueyoshi, T.; Fujiyoshi, T. [Kumamoto University, 2-39-1, Kurokami, Kumamoto 860-8555 (Japan); Mukaida, M.; Kai, H. [Kyushu University, 744 Moto-oka, Nishi-ku, Fukuoka 819-0385 (Japan); Matsumoto, K.; Mele, P. [Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu 804-8550 (Japan); Maeda, T.; Horii, S. [Kochi University of Technology, Tosayamada-cho, Kami-shi, Kochi 782-8502 (Japan)

    2011-11-15

    Nano-rods were introduced into ErBa{sub 2}Cu{sub 3}O{sub y} thin films to improve J{sub c}. Pinning properties depended on the growth temperature of the films. Morphology of nano-rods was affected by the growth temperature. The growth temperature is important to achieve high in-field J{sub c}'s. Irreversibility lines and distributions of local critical current density (J{sub cl}) based on the percolation transition model were affected by the growth temperature (T{sub s}) in 3.5 wt.%-BaNb{sub 2}O{sub 6}-doped ErBa{sub 2}Cu{sub 3}O{sub y} thin films. The vortex-Bose-glass-like state appeared by the introduction of nano-rods, and this vortex state was affected by T{sub s}. The shape and width of the J{sub cl} distribution strongly depended on T{sub s}. These results are probably caused by variations of the density and the growth direction for nano-rods reflecting T{sub s}. The growth temperature is an important factor to achieve higher critical current properties under magnetic fields for coated conductors of rare-earth-based cuprates with nano-rods.

  12. Strain-induced properties of epitaxial VOx thin films

    NARCIS (Netherlands)

    Rata, AD; Hibma, T

    We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films

  13. A versatile light-switchable nanorod memory: Wurtzite ZnO on perovskite SrTiO3

    KAUST Repository

    Kumar, Anup Bera

    2013-04-25

    Integrating materials with distinct lattice symmetries and dimensions is an effective design strategy toward realizing novel devices with unprecedented functionalities, but many challenges remain in synthesis and device design. Here, a heterojunction memory made of wurtzite ZnO nanorods grown on perovskite Nb-doped SrTiO3 (NSTO) is reported, the electronic properties of which can be drastically reconfigured by applying a voltage and light. Despite of the distinct lattice structures of ZnO and NSTO, a consistent nature of single crystallinity is achieved in the heterojunctions via the low-temperature solution-based hydrothermal growth. In addition to a high and persistent photoconductivity, the ZnO/NSTO heterojunction diode can be turned into a versatile light-switchable resistive switching memory with highly tunable ON and OFF states. The reversible modification of the effective interfacial energy barrier in the concurrent electronic and ionic processes most likely gives rise to the high susceptibility of the ZnO/NSTO heterojunction to external electric and optical stimuli. Furthermore, this facile synthesis route is promising to be generalized to other novel functional nanodevices integrating materials with diverse structures and properties. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Atomic-scale structure relaxation, chemistry and charge distribution of dislocation cores in SrTiO3.

    Science.gov (United States)

    Gao, Peng; Ishikawa, Ryo; Feng, Bin; Kumamoto, Akihito; Shibata, Naoya; Ikuhara, Yuichi

    2018-01-01

    By using the state-of-the-art microscopy and spectroscopy in aberration-corrected scanning transmission electron microscopes, we determine the atomic arrangements, occupancy, elemental distribution, and the electronic structures of dislocation cores in the 10° tilted SrTiO 3 bicrystal. We identify that there are two different types of oxygen deficient dislocation cores, i.e., the SrO plane terminated Sr 0.82 Ti 0.85 O 3-x (Ti 3.67+ , 0.48 ≤ x ≤ 0.91) and TiO 2 plane terminated Sr 0.63 Ti 0.90 O 3-y (Ti 3.60+ , 0.57 ≤ y ≤ 1). They have the same Burgers vector of a[100] but different atomic arrangements and chemical properties. Besides the oxygen vacancies, Sr vacancies and rocksalt-like titanium oxide reconstruction are also identified in the dislocation core with TiO 2 plane termination. Our atomic-scale study reveals the true atomic structures and chemistry of individual dislocation cores, providing useful insights into understanding the properties of dislocations and grain boundaries. Copyright © 2017 Elsevier B.V. All rights reserved.

  15. Electron-density distribution in cubic SrTiO3: a comparative gamma-ray diffraction study.

    Science.gov (United States)

    Jauch, W; Reehuis, M

    2005-07-01

    The electron density and atomic displacements in the perovskite SrTiO(3) have been studied using extensive and accurate gamma-ray diffraction data (lambda = 0.0392 A) at room temperature. The six strongest low-order structure factors have been determined under extinction-free conditions. Gram-Charlier series expansion of the thermal parameters have revealed no evidence for anharmonicity. The population of the 3d subshell on Ti is found to be close to zero, in agreement with the observed magnetic behaviour. The electronic properties at the bond critical points indicate ionic Ti-O and Sr-O interactions of different strengths, which is corroborated by the net charges of the atomic basins [q(Sr) = 1.18 |e|, q(Ti) = 3.10 |e|, q(O) = -1.42 |e|]. A critical comparison is made with earlier experimental results from laboratory X-ray, synchrotron X-ray, electron and neutron diffraction studies. Agreement and discrepancies are identified and resolved.

  16. Spin and orbital Ti magnetism at LaMnO3/SrTiO3 interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Garcial-Barriocanal, J [Universidad Complutense, Spain; Cezar, J. C. [European Synchrotron Radiation Facility (ESRF); Bruno, F. Y. [Universidad Complutense, Spain; Thakur, P. [European Synchrotron Radiation Facility (ESRF); Brookes, N. B. [European Synchrotron Radiation Facility (ESRF); Utfeld, C. [University of Bristol, UK; Riviera-Calzada, A. [Universidad Complutense, Spain; Giblin, S. R. [ISIS Facility, Rutherford Appleton Laboratory; Taylor, J. W. [ISIS Facility, Rutherford Appleton Laboratory; Duffy, J. A. [University of Warwick, UK; Dugdale, S. B. [University of Bristol, UK; Nakamura, T. [Japan Synchrotron Radiation Research Institute, SPring-8; Kodama, K. [Japan Synchrotron Radiation Research Institute, SPring-8; Leon, C. [Universidad Complutense, Spain; Okamoto, Satoshi [ORNL; Santamaria, J. [Universidad Complutense, Spain

    2010-01-01

    In systems with strong electron-lattice coupling, such as manganites, orbital degeneracy is lifted, what causes a null expectation value of the orbital moment. Magnetic structure is thus determined by spin-spin superexchange. In titanates, however, with much smaller Jahn-Teller distortions, orbital degeneracy might allow non-zero values of the orbital magnetic moment. Accordingly, novel forms of ferromagnetic superexchange interaction unique to t2g electrons systems have been theoretically predicted, although their experimental observation has remained elusive. Here we report a new kind of Ti3+ ferromagnetism at LaMnO3/SrTiO3 epitaxial interfaces. It results from charge transfer to the empty conduction band of the titanate and has spin and orbital contributions evidencing the role played by orbital degeneracy. The possibility of tuning magnetic alignment (ferromagnetic or antiferromagnetic) of Ti and Mn moments by structural parameters is demonstrated. This result will provide important clues for the understanding of the effects of orbital degeneracy in superexchange coupling.

  17. Signatures of electronic nematicity in (111) LaAlO3/SrTiO3 interfaces

    Science.gov (United States)

    Davis, S.; Huang, Z.; Han, K.; Ariando, Venkatesan, T.; Chandrasekhar, V.

    2018-01-01

    The two-dimensional conducting gas (2DCG) that forms at the interface between LaAlO3 (LAO) and SrTiO3 (STO) has been widely studied due to the multitude of in situ tunable phenomena that exist at the interface. Recently it has been shown that nearly every property of the 2DEG that forms at the interface of (111) oriented LAO/STO is strongly anisotropic with respect to the in-plane crystal direction. This in-plane rotational symmetry breaking points to the existence of an electronic nematic phase at the interface that can be modified by an in situ electrostatic back-gate potential. Here we show that the onset temperature of the anisotropy in the longitudinal resistance is T ≈22 K , which does not match up with any known structural transition, and coincides with the onset of anisotropy in the Hall response of the system. Furthermore, below 22 K, charge transport is activated in nature with different activation energies along the two in-plane crystal directions. Such a response implies that the band edges along the two directions are different and provides further evidence of an electronic nematic state at the interface.

  18. Perovskite oxide SrTiO3 as an efficient electron transporter for hybrid perovskite solar cells

    KAUST Repository

    Bera, Ashok

    2014-12-11

    In this work, we explored perovskite oxide SrTiO3 (STO) for the first time as the electron-transporting layer in organolead trihalide perovskite solar cells. The steady-state photoluminescence (PL) quenching and transient absorption experiments revealed efficient photoelectron transfer from CH3NH3PbI3-xClx to STO. Perovskite solar cells with meso-STO exhibit an open circuit voltage of 1.01 V, which is 25% higher than the value of 0.81 V achieved in the control device with the conventional meso-TiO2. In addition, an increase of 17% in the fill factor was achieved by tailoring the thickness of the meso-STO layer. We found that the application of STO leads to uniform perovskite layers with large grains and complete surface coverage, leading to a high shunt resistance and improved performance. These findings suggest STO as a competitive candidate as electron transport material in organometal perovskite solar cells.

  19. Magnetoresistance in the superconducting state at the (111) LaAlO3/SrTiO3 interface

    Science.gov (United States)

    Davis, S.; Huang, Z.; Han, K.; Ariando, Venkatesan, T.; Chandrasekhar, V.

    2017-10-01

    Condensed-matter systems that simultaneously exhibit superconductivity and ferromagnetism are rare due the antagonistic relationship between conventional spin-singlet superconductivity and ferromagnetic order. In materials in which superconductivity and magnetic order are known to coexist (such as some heavy-fermion materials), the superconductivity is thought to be of an unconventional nature. Recently, the conducting gas that lives at the interface between the perovskite band insulators LaAlO3 (LAO) and SrTiO3 (STO) has also been shown to host both superconductivity and magnetism. Most previous research has focused on LAO/STO samples in which the interface is on the (001) crystal plane. Relatively little work has focused on the (111) crystal orientation, which has hexagonal symmetry at the interface, and has been predicted to have potentially interesting topological properties, including unconventional superconducting pairing states. Here we report measurements of the magnetoresistance of (111) LAO/STO heterostructures at temperatures at which they are also superconducting. As with the (001) structures, the magnetoresistance is hysteretic, indicating the coexistence of magnetism and superconductivity, but in addition, we find that this magnetoresistance is anisotropic. Such an anisotropic response is completely unexpected in the superconducting state and suggests that (111) LAO/STO heterostructures may support unconventional superconductivity.

  20. Adsorptive and photocatalytic properties of S-doped SrTiO3 under simulated solar irradiation

    Science.gov (United States)

    Huynh, Phu Chi; Le, Vien Minh

    2017-09-01

    S-doped SrTiO3 (SSTO) nanoparticles were synthesized using the sol-gel method with Sr(NO3)2, n- Ti(OC4H9)4, and Thiourea as precursors. Several analytical techniques including XRD, SEM, BET were employed to characterize the physical properties of the product. High crystalline perovskite of SSTO powder was synthesized at 700 °C calcined temperature with the specific surface area of 20.71 m2/g. UV-Vis diffuse reflectance spectra results of STO and 5SSTO present band gap energy of 3.2 and 2.95 eV respectively. Photocatalytic activity was determined through the photodegradation of Congo Red at the initial concentrations of 70 ppm under simulated solar irradiation using 26W mercury lamp (120V - 60Hz). The decompositions of approximately 90.4% was obtained after 210 minutes of illumination. The photocatalyst was stable in aqueous solution that its photocatalytic activity was merely reduced by 9% even after 4 reusing iterations.

  1. Effective theory of exotic superconductivity in LaAlO3/SrTiO3 interfaces

    Science.gov (United States)

    Esmailzadeh, Haniyeh; Moghaddam, Ali G.

    2018-05-01

    Motivated by experimental and theoretical works about superconductivity at the oxide interfaces, we provide a simple model for possible unconventional pairings inside the exotic two-dimensional electron gas formed in heterostructures of SrTiO3 and LaAlO3. At the low energy limit, the electron gas at the interfaces is usually modeled with an effective three band model considering of 3d t2g orbitals which are slightly coupled by atomic spin-orbit couplings (SOC). Considering direct superconducting pairing in two higher delocalized bands and by exploiting a perturbative scheme based on canonical transformation, we derive the effective pairing amplitudes with possibly exotic nature inside the localized dxy band as well as various inter-band pairing components. In particular we show that equal-spin triplet pairings are possible between the band dxy and any of other dxz and dyz bands. In addition weaker effective pairings take place inside the localized band itself and between delocalized dxz and dyz bands with singlet and opposite-spin triplet characters. These unconventional effective pairings are indeed mediated by SOC-induced higher order virtual transitions between the bands and particularly into the localized band. Our model suggest that unconventional effective superconductivity is possible at oxide interfaces, simply, due to the special band structure and important role of atomic SOC and perhaps other magnetic effects present at these heterostructures.

  2. Spin-Orbit Interaction and Kondo Scattering at the PrAlO3/SrTiO3 Interface

    Science.gov (United States)

    Mozaffari, Shirin; Guchhait, Samaresh; Markert, John

    We have investigated the effect of oxygen content, in the PO2 range of 6 ×10-6 - 1 ×10-3 torr, on the spin-orbit (SO) interaction at PrAlO3/SrTiO3 interface. The most-conducting 2-D-like PrAlO3 interfaces were not as conducting as comparable LaAlO3 samples, indicating either a steric or mixed-valent effect. The least-conducting, most oxygenated PrAlO3 interface exhibits hole conductivity, a departure from the typical electron-doped behavior. For 10-5 and 10-4 torr samples, high-temperature metallic behavior is accompanied by an upturn in resistivity at low temperatures, consistent with Kondo scattering theory; analysis gives a Kondo temperature 17 K. The magnetoresistance (MR) for the low PO2-grown samples was modeled with a positive part due to weak anti-localization (WAL) from a strong SO interaction, and a negative part due to the Kondo effect. The variation of MR suggests a strong SO interaction for the 10-5 torr sample with HSO = 1.25 T in both field orientations. The WAL effect is smaller for higher PO2-grown samples, where the high-field MR is dominated by the Kondo effect.

  3. Correlation of High Magnetoelectric Coupling with Oxygen Vacancy Superstructure in Epitaxial Multiferroic BaTiO₃-BiFeO₃ Composite Thin Films.

    Science.gov (United States)

    Lorenz, Michael; Wagner, Gerald; Lazenka, Vera; Schwinkendorf, Peter; Bonholzer, Michael; Van Bael, Margriet J; Vantomme, André; Temst, Kristiaan; Oeckler, Oliver; Grundmann, Marius

    2016-01-13

    Epitaxial multiferroic BaTiO₃-BiFeO₃ composite thin films exhibit a correlation between the magnetoelectric (ME) voltage coefficient α ME and the oxygen partial pressure during growth. The ME coefficient α ME reaches high values up to 43 V/(cm·Oe) at 300 K and at 0.25 mbar oxygen growth pressure. The temperature dependence of α ME of the composite films is opposite that of recently-reported BaTiO₃-BiFeO₃ superlattices, indicating that strain-mediated ME coupling alone cannot explain its origin. Probably, charge-mediated ME coupling may play a role in the composite films. Furthermore, the chemically-homogeneous composite films show an oxygen vacancy superstructure, which arises from vacancy ordering on the {111} planes of the pseudocubic BaTiO₃-type structure. This work contributes to the understanding of magnetoelectric coupling as a complex and sensitive interplay of chemical, structural and geometrical issues of the BaTiO₃-BiFeO₃ composite system and, thus, paves the way to practical exploitation of magnetoelectric composites.

  4. Correlation of High Magnetoelectric Coupling with Oxygen Vacancy Superstructure in Epitaxial Multiferroic BaTiO3-BiFeO3 Composite Thin Films

    Directory of Open Access Journals (Sweden)

    Michael Lorenz

    2016-01-01

    Full Text Available Epitaxial multiferroic BaTiO3-BiFeO3 composite thin films exhibit a correlation between the magnetoelectric (ME voltage coefficient αME and the oxygen partial pressure during growth. The ME coefficient αME reaches high values up to 43 V/(cm·Oe at 300 K and at 0.25 mbar oxygen growth pressure. The temperature dependence of αME of the composite films is opposite that of recently-reported BaTiO3-BiFeO3 superlattices, indicating that strain-mediated ME coupling alone cannot explain its origin. Probably, charge-mediated ME coupling may play a role in the composite films. Furthermore, the chemically-homogeneous composite films show an oxygen vacancy superstructure, which arises from vacancy ordering on the {111} planes of the pseudocubic BaTiO3-type structure. This work contributes to the understanding of magnetoelectric coupling as a complex and sensitive interplay of chemical, structural and geometrical issues of the BaTiO3-BiFeO3 composite system and, thus, paves the way to practical exploitation of magnetoelectric composites.

  5. Correlation of High Magnetoelectric Coupling with Oxygen Vacancy Superstructure in Epitaxial Multiferroic BaTiO3-BiFeO3 Composite Thin Films

    Science.gov (United States)

    Lorenz, Michael; Wagner, Gerald; Lazenka, Vera; Schwinkendorf, Peter; Bonholzer, Michael; Van Bael, Margriet J.; Vantomme, André; Temst, Kristiaan; Oeckler, Oliver; Grundmann, Marius

    2016-01-01

    Epitaxial multiferroic BaTiO3-BiFeO3 composite thin films exhibit a correlation between the magnetoelectric (ME) voltage coefficient αME and the oxygen partial pressure during growth. The ME coefficient αME reaches high values up to 43 V/(cm·Oe) at 300 K and at 0.25 mbar oxygen growth pressure. The temperature dependence of αME of the composite films is opposite that of recently-reported BaTiO3-BiFeO3 superlattices, indicating that strain-mediated ME coupling alone cannot explain its origin. Probably, charge-mediated ME coupling may play a role in the composite films. Furthermore, the chemically-homogeneous composite films show an oxygen vacancy superstructure, which arises from vacancy ordering on the {111} planes of the pseudocubic BaTiO3-type structure. This work contributes to the understanding of magnetoelectric coupling as a complex and sensitive interplay of chemical, structural and geometrical issues of the BaTiO3-BiFeO3 composite system and, thus, paves the way to practical exploitation of magnetoelectric composites. PMID:28787843

  6. Strain effects on the spin polarized electron gas in ABO3/SrTiO3 (A = Pr, Nd and B = Al, Ga) heterostructures

    KAUST Repository

    Nazir, Safdar

    2013-04-11

    The spin polarized two dimensional electron gas in the correlated ABO3/SrTiO3 (A = Pr, Nd and B = Al, Ga) heterostructures is investigated by ab-initio calculations using density functional theory. Structural relaxation shows a strong buckling at and near the TiO2 terminated n-type interface (IFs) due to significant TiO6 octahedral distortions. We find in all cases, metallic states in a very narrow region of the SrTiO3, in agreement with experimental results. We demonstrate that the interface magnetism strongly reacts to the magnitude of the lattice strain. The orbital occupations and, hence, the charge carrier density change systematically as a function of the lattice mismatch between the component materials.

  7. High mobility half-metallicity in the (LaMnO3)2/(SrTiO3)8 superlattice

    KAUST Repository

    Cossu, Fabrizio

    2013-01-28

    First principles calculations have been performed to investigate the LaMnO3/SrTiO3 superlattice. Structural relaxation within the generalized gradient approximation results in no significant tiltings or rotations of oxygen octahedra, but in distinct distortions in the SrTiO3 region. Taking into account the onsite Coulomb interaction, we find that the Mn spins order ferromagnetically, in contrast to the antiferromagnetic state of bulk LaMnO3. Most importantly, the interface strain combined with charge transfer across the interface induces half-metallicity within the MnO2 layers. The superlattice is particulary interesting for spintronics applications because the half-metallic states are characterized by an extraordinary high mobility.

  8. Influence of oxygen pressure and aging on LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates

    KAUST Repository

    Park, Jihwey

    2014-02-24

    The crystal structures of LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates at oxygen pressure of 10−3 millibars or 10−5 millibars, where kinetics of ablated species hardly depend on oxygen background pressure, are compared. Our results show that the interface between LaAlO3 and SrTiO3 is sharper when the oxygen pressure is lower. Over time, the formation of various crystalline phases is observed while the crystalline thickness of the LaAlO3 layer remains unchanged. X-ray scattering as well as atomic force microscopy measurements indicate three-dimensional growth of such phases, which appear to be fed from an amorphous capping layer present in as-grown samples.

  9. Transport and magnetoresistance effect in an oxygen-deficient SrTiO3/La0.67Sr0.33MnO3 heterojunction

    International Nuclear Information System (INIS)

    Wang Jing; Chen Chang-Le; Yang Shi-Hai; Luo Bing-Cheng; Duan Meng-Meng; Jin Ke-Xin

    2013-01-01

    An oxygen-deficient SrTiO 3 /La 0.67 Sr 0.33 MnO 3 heterojunction is fabricated on an SrTiO 3 (001) substrate by a pulsed laser deposition method. The electrical characteristics of the heterojunction are studied systematically in a temperature range from 80 K to 300 K. The transport mechanism follows I ∞ exp(eV/nkT) under small forward bias, while it becomes space charge limited and follows I ∞ V m(T) with 1.49 < m < 1.99 under high bias. Such a heterojunction also exhibits magnetoresistance (MR) effect. The absolute value of negative MR monotonically increases with temperature decreasing and reaches 26.7% at 80 K under H = 0.7 T. Various factors, such as strain and oxygen deficiency play dominant roles in the characteristics. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. The role of structural order-disorder for visible intense photoluminescence in the BaZr0.5Ti0.5O3 thin films

    International Nuclear Information System (INIS)

    Anicete-Santos, M.; Cavalcante, L.S.; Orhan, E.; Paris, E.C.; Simoes, L.G.P.; Joya, M.R.; Rosa, I.L.V.; Lucena, P.R. de; Santos, M.R.M.C.; Santos-Junior, L.S.; Pizani, P.S.; Leite, E.R.; Varela, J.A.; Longo, E.

    2005-01-01

    The nature of the intense visible room temperature photoluminescence of BaZr 0.5 Ti 0.5 O 3 non-crystalline thin films is discussed in the light of experimental results and theoretical calculations. The photoluminescence measurements reveal that the emission intensity changes with the degree of disorder in the BaZr 0.5 Ti 0.5 O 3 lattice. First principles quantum mechanical techniques, based on density functional theory at B3LYP level, have been employed to study the electronic structure of a crystalline model and of structurally disordered models in order to detect the influence of disorder on the electronic structure. An analysis of the electronic charge distribution reveals local polarization in the disordered structures. The relevance of the present theoretical and experimental results on the photoluminescence behavior of BZT is discussed

  11. Near-Surface Structural Phase Transition of SrTiO3 Studied with Zero-Field β-Detected Nuclear Spin Relaxation and Resonance

    Science.gov (United States)

    Salman, Z.; Kiefl, R. F.; Chow, K. H.; Hossain, M. D.; Keeler, T. A.; Kreitzman, S. R.; Levy, C. D. P.; Miller, R. I.; Parolin, T. J.; Pearson, M. R.; Saadaoui, H.; Schultz, J. D.; Smadella, M.; Wang, D.; Macfarlane, W. A.

    2006-04-01

    We demonstrate that zero-field β-detected nuclear quadrupole resonance and spin relaxation of low energy Li8 can be used as a sensitive local probe of structural phase transitions near a surface. We find that the transition near the surface of a SrTiO3 single crystal occurs at Tc˜150K, i.e., ˜45K higher than Tcbulk, and that the tetragonal domains formed below Tc are randomly oriented.

  12. Magneto-transport properties of La0.7Ca0.3MnO3/ SrTiO3/La0 ...

    Indian Academy of Sciences (India)

    Magneto-transport properties of La0.7Ca0.3MnO3/. SrTiO3/La0.7Ce0.3MnO3 tunnel junction. P RAYCHAUDHURI1,∗. , C MITRA2, K DORR2, K H MULLER2,. G KOBERNIK2 and R PINTO3. 1Department of Physics and Astronomy, University of Birmingham, B15 2TT, UK. 2Institut fur Festkorper und Wekstofforschung, ...

  13. Insight into synergistically enhanced adsorption and visible light photocatalytic performance of Z-scheme heterojunction of SrTiO3(La,Cr)-decorated WO3 nanosheets

    Science.gov (United States)

    Liu, Xin; Jiang, Junzhe; Jia, Yushuai; Qiu, Jinmin; Xia, Tonglin; Zhang, Yuhong; Li, Yuqin; Chen, Xiangshu

    2017-08-01

    The efficient treatment of dye wastewater has been a hot topic of environment field. The integration of adsorption and photocatalytic degradation via fabrication of bi-component heterojunction photocatalyst is considered as a facile and effective strategy to enhance the dye elimination efficiency. In this report, a Z-scheme heterojunction material, SrTiO3(La,Cr)/WO3 with bifunction of adsorption and photocatalysis was successfully synthesized for efficient removal of methylene blue (MB) under visible light irradiation. The morphology and microstructure characterization demonstrates that the SrTiO3(La,Cr) nanoparticles are uniformly decorated on the WO3 nanosheets, forming an intimate heterojunction interface. MB degradation results indicate that the removal efficiency by the synergistic adsorption-photocatalysis process is greatly improved compared to pure WO3 and SrTiO3(La,Cr) with the adsorption and photocatalytic activity closely related to the composition of the material. The possible mechanism for the enhanced photocatalytic activity could be ascribed to the formation of a Z-scheme heterojunction system based on active species trapping experiments. Furthermore, the investigations of adsorption kinetics and isotherm show that the adsorption process follows pseudo-second-order kinetic model and Langmuir isotherm, respectively. Due to the synergistic advantages of negative zeta potential, large surface area and accelerated separation of photogenerated carriers driven by Z-scheme heterojunction, SrTiO3(La,Cr)/WO3 exhibits excellent adsorption-photocatalytic performance and stability on MB removal, which could be potentially used for practical wastewater treatment.

  14. Modification of Ag nanoparticles on the surface of SrTiO3 particles and resultant influence on photoreduction of CO2

    Science.gov (United States)

    Shao, Kunjuan; Wang, Yanjie; Iqbal, Muzaffar; Lin, Lin; Wang, Kai; Zhang, Xuehua; He, Meng; He, Tao

    2018-03-01

    Modification of a wide-bandgap semiconductor with noble metals that can exhibit surface plasmon effect is an effective approach to make it responsive to the visible light. In this work, a series of cubic and all-edge-truncated SrTiO3 with and without thermal pretreatment in air are modified by Ag nanoparticles via photodeposition method. The crystal structure, morphology, loading amount of Ag nanoparticles, and optical properties of the obtained Ag-SrTiO3 nanomaterials are well characterized by powder X-ray diffraction, scanning microscope, transmission electron microscope, energy disperse X-ray spectroscopy, ICP-MS and UV-vis diffuse-reflection spectroscopy. The loading amount and size of the Ag nanoparticles can be controlled to some extent by tuning the photodeposition time via growth-dissolution mechanism. The Ag nanoparticles are inclined to deposit on different locations on the surface of cubic and truncated SrTiO3 with and without thermal pretreatment. The resultant SrTiO3 modified by Ag nanoparticles exhibits visible light activity for photocatalytic reduction of CO2, which is closely related to the oxygen vacancy induced by thermal pretreatment, size and amount of Ag nanoparticles. Accordingly, there is an optimized photodeposition time for the synthesis of the photocatalyst that exhibits the highest photocatalytic activity.

  15. The dynamics of ultraviolet-induced oxygen vacancy at the surface of insulating SrTiO3(0 0 1)

    International Nuclear Information System (INIS)

    Suwanwong, S.; Eknapakul, T.; Rattanachai, Y.; Masingboon, C.; Rattanasuporn, S.; Phatthanakun, R.; Nakajima, H.; King, P.D.C.; Hodak, S.K.; Meevasana, W.

    2015-01-01

    Highlights: • The dynamics of UV-induced oxygen vacancy is studied from the change of surface resistance. • The formation of 2DEG at the insulating surface of SrTiO 3 is confirmed by ARPES. • The UV-induced change in resistance responds differently to oxygen/gas exposure. • The behavior of resistance recovery suggests an alternative method of low-pressure sensing. - Abstract: The effect of ultra-violet (UV) irradiation on the electronic structure and the surface resistance of an insulating SrTiO 3 (0 0 1) crystal is studied in this work. Upon UV irradiation, we show that the two-dimensional electron gas (2DEG) emerges at the insulating SrTiO 3 surface and there is a pronounced change in the surface resistance. By combining the observations of the change in valance band and the resistance change under different environments of gas pressure and gas species, we find that UV-induced oxygen vacancies at the surface plays a major role in the resistance change. The dynamic of the resistance change at different oxygen pressures also suggests an alternative method of low-pressure sensing.

  16. Observation of the flexoelectricity of a SrTiO3 single crystal by x-ray absorption and emission spectroscopies

    Science.gov (United States)

    Lu, C.; Nakajima, N.; Maruyama, H.

    2017-02-01

    Flexoelectricity, defined as the spontaneous electric polarization in a dielectric material induced by a strain gradient, is investigated from the microscopic viewpoint by x-ray spectroscopy. A single crystal SrTiO3 sample was used as a test system in order to reveal the appearance of the electric dipole moment by simple bending of the crystal. The spectral change characteristic of ferroelectric transition in SrTiO3 was not observed in the Ti K-edge absorption spectra. Instead, the gradual decrease (increase) of the post-edge feature (pre-edge structure) by bending was qualitatively explained using theoretical calculations that assumed the presence of oxygen vacancies and a slight crystal distortion. This assumption is also supported by the broadening of a tiny charge-transfer peak in the Ti Kβ resonant emission spectra. Therefore, it was revealed that the flexoelectric effect in SrTiO3 is easily drowned out through local imperfection induced by crystal deformations and cracks.

  17. New insights on the synthesis and electronic transport in bulk polycrystalline Pr-doped SrTiO3−δ

    KAUST Repository

    Dehkordi, Arash Mehdizadeh

    2015-02-07

    Recently, we have reported a significant enhancement in the electronic and thermoelectric properties of bulk polycrystalline SrTiO3 ceramics via praseodymium doping. This improvement was originated from the simultaneous enhancement in the thermoelectric power factor and reduction in thermal conductivity, which was contributed to the non-uniform distribution of Pr dopants. In order to further understand the underlying mechanism, we herein investigate the role of praseodymium doping source (Pr2O3 versus Pr6O11) on the synthesis and electronic transport in Pr-doped SrTiO3 ceramics. It was observed that the high-temperature electronic transport properties are independent of the choice of praseodymium doping source for samples prepared following our synthesis strategy. Theoretical calculations were also performed in order to estimate the maximum achievable power factor and the corresponding optimal carrier concentration. The result suggests the possibility of further improvement of the power factor. This study should shed some light on the superior electronic transport in bulk polycrystalline Pr-doped SrTiO3 ceramics and provide new insight on further improvement of the thermoelectric power factor.

  18. Adsorption of small molecules at the cobalt-doped SrTiO3(001) surface: A first-principles investigation

    Science.gov (United States)

    Carlotto, Silvia; Natile, Marta Maria; Glisenti, Antonella; Vittadini, Andrea

    2015-03-01

    The cobalt-doped SrTiO3 (001) surface and its interaction with small molecules (CO, NO and O2) is investigated by DFT and DFT + U calculations. Structural, electronic, and chemical changes induced by the presence of the cobalt impurity are studied. Similar to what is found for the bulk SrTiO3, cobalt impurities promote the formation of oxygen vacancies and tend to cluster with them. The presence of impurities has a strong influence on adsorption and in particular it gives rise i) to an enhancement of the adsorption energies and ii) to an inversion of the π electron flux from a surface → molecule to a molecule → surface donation. Furthermore, the examined molecular probes have different affinities with surface defects/impurities: whereas the vacancy site is favored for O2and CO, NO is preferentially adsorbed at the Co impurity site. The obtained results provide the basis for further studies of the catalytic properties of Co-doped SrTiO3.

  19. Gate-tunable polarized phase of two-dimensional electrons at the LaAlO3/SrTiO3 interface.

    Science.gov (United States)

    Joshua, Arjun; Ruhman, Jonathan; Pecker, Sharon; Altman, Ehud; Ilani, Shahal

    2013-06-11

    Controlling the coupling between localized spins and itinerant electrons can lead to exotic magnetic states. A novel system featuring local magnetic moments and extended 2D electrons is the interface between LaAlO3 and SrTiO3. The magnetism of the interface, however, was observed to be insensitive to the presence of these electrons and is believed to arise solely from extrinsic sources like oxygen vacancies and strain. Here we show the existence of unconventional electronic phases in the LaAlO3/SrTiO3 system pointing to an underlying tunable coupling between itinerant electrons and localized moments. Using anisotropic magnetoresistance and anomalous Hall effect measurements in a unique in-plane configuration, we identify two distinct phases in the space of carrier density and magnetic field. At high densities and fields, the electronic system is strongly polarized and shows a response, which is highly anisotropic along the crystalline directions. Surprisingly, below a density-dependent critical field, the polarization and anisotropy vanish whereas the resistivity sharply rises. The unprecedented vanishing of the easy axes below a critical field is in sharp contrast with other coupled magnetic systems and indicates strong coupling with the moments that depends on the symmetry of the itinerant electrons. The observed interplay between the two phases indicates the nature of magnetism at the LaAlO3/SrTiO3 interface as both having an intrinsic origin and being tunable.

  20. High-k perovskite gate oxide BaHfO3

    Science.gov (United States)

    Kim, Young Mo; Park, Chulkwon; Ha, Taewoo; Kim, Useong; Kim, Namwook; Shin, Juyeon; Kim, Youjung; Yu, Jaejun; Kim, Jae Hoon; Char, Kookrin

    2017-01-01

    We have investigated epitaxial BaHfO3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO3 on BaSnO3 and MgO. We measured optical and dielectric properties of the BaHfO3 gate insulator; the optical bandgap, the dielectric constant, and the breakdown field. Furthermore, we fabricated a perovskite heterostructure field effect transistor using epitaxial BaHfO3 as a gate insulator and La-doped BaSnO3 as a channel layer on SrTiO3 substrate. To reduce the threading dislocations and enhance the electrical properties of the channel, an undoped BaSnO3 buffer layer was grown on SrTiO3 substrates before the channel layer deposition. The device exhibited a field effect mobility value of 52.7 cm2 V-1 s-1, a Ion/Ioff ratio higher than 107, and a subthreshold swing value of 0.80 V dec-1. We compare the device performances with those of other field effect transistors based on BaSnO3 channels and different gate oxides.

  1. High-k perovskite gate oxide BaHfO3

    Directory of Open Access Journals (Sweden)

    Young Mo Kim

    2017-01-01

    Full Text Available We have investigated epitaxial BaHfO3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO3 on BaSnO3 and MgO. We measured optical and dielectric properties of the BaHfO3 gate insulator; the optical bandgap, the dielectric constant, and the breakdown field. Furthermore, we fabricated a perovskite heterostructure field effect transistor using epitaxial BaHfO3 as a gate insulator and La-doped BaSnO3 as a channel layer on SrTiO3 substrate. To reduce the threading dislocations and enhance the electrical properties of the channel, an undoped BaSnO3 buffer layer was grown on SrTiO3 substrates before the channel layer deposition. The device exhibited a field effect mobility value of 52.7 cm2 V−1 s−1, a Ion/Ioff ratio higher than 107, and a subthreshold swing value of 0.80 V dec−1. We compare the device performances with those of other field effect transistors based on BaSnO3 channels and different gate oxides.

  2. Band gap and mobility of epitaxial perovskite BaSn1 -xHfxO3 thin films

    Science.gov (United States)

    Shin, Juyeon; Lim, Jinyoung; Ha, Taewoo; Kim, Young Mo; Park, Chulkwon; Yu, Jaejun; Kim, Jae Hoon; Char, Kookrin

    2018-02-01

    A wide band-gap perovskite oxide BaSn O3 is attracting much attention due to its high electron mobility and oxygen stability. On the other hand, BaHf O3 was recently reported to be an effective high-k gate oxide. Here, we investigate the band gap and mobility of solid solutions of BaS n1 -xH fxO3 (x =0 -1 ) (BSHO) as a basis to build advanced perovskite oxide heterostructures. All the films were epitaxially grown on MgO substrates using pulsed laser deposition. Density functional theory calculations confirmed that Hf substitution does not create midgap states while increasing the band gap. From x-ray diffraction and optical transmittance measurements, the lattice constants and the band-gap values are significantly modified by Hf substitution. We also measured the transport properties of n -type La-doped BSHO films [(Ba ,La ) (Sn ,Hf ) O3 ] , investigating the feasibility of modulation doping in the BaSn O3/BSHO heterostructures. The Hall measurement data revealed that, as the Hf content increases, the activation rate of the La dopant decreases and the scattering rate of the electrons sharply increases. These properties of BSHO films may be useful for applications in various heterostructures based on the BaSn O3 system.

  3. Origin of the Two-Dimensional Electron Gas at LaAlO_{3}/SrTiO_{3} Interfaces: The Role of Oxygen Vacancies and Electronic Reconstruction

    Directory of Open Access Journals (Sweden)

    Z. Q. Liu

    2013-05-01

    Full Text Available The relative importance of atomic defects and electron transfer in explaining conductivity at the crystalline LaAlO_{3}/SrTiO_{3} interface has been a topic of debate. Metallic interfaces with similar electronic properties produced by amorphous oxide overlayers on SrTiO_{3} [Y. Chen et al., Nano Lett. 11, 3774 (2011NALEFD1530-698410.1021/nl201821j; S. W. Lee et al., Nano Lett. 12, 4775 (2012NALEFD1530-698410.1021/nl302214x] have called in question the original polarization catastrophe model [N. Nakagawa et al., Nature Mater. 5, 204 (2006NMAACR1476-112210.1038/nmat1569]. We resolve the issue by a comprehensive comparison of (100-oriented SrTiO_{3} substrates with crystalline and amorphous overlayers of LaAlO_{3} of different thicknesses prepared under different oxygen pressures. For both types of overlayers, there is a critical thickness for the appearance of conductivity, but its value is always 4 unit cells (around 1.6 nm for the oxygen-annealed crystalline case, whereas in the amorphous case, the critical thickness could be varied in the range 0.5 to 6 nm according to the deposition conditions. Subsequent ion milling of the overlayer restores the insulating state for the oxygen-annealed crystalline heterostructures but not for the amorphous ones. Oxygen post-annealing removes the oxygen vacancies, and the interfaces become insulating in the amorphous case. However, the interfaces with a crystalline overlayer remain conducting with reduced carrier density. These results demonstrate that oxygen vacancies are the dominant source of mobile carriers when the LaAlO_{3} overlayer is amorphous, while both oxygen vacancies and polarization catastrophe contribute to the interface conductivity in unannealed crystalline LaAlO_{3}/SrTiO_{3} heterostructures, and the polarization catastrophe alone accounts for the conductivity in oxygen-annealed crystalline LaAlO_{3}/SrTiO_{3} heterostructures. Furthermore, we find that the crystallinity of the LaAlO_{3} layer is crucial for the polarization catastrophe mechanism in the case of crystalline LaAlO_{3} overlayers.

  4. Synthesis and characterization of Ba0.5Pb0.5TiO3 perovskite - type thin films deposited by spin coating at low temperatures

    International Nuclear Information System (INIS)

    Wermuth, T.B.; Wiederkehr, N.A.; Alves, A.K.; Bergmann, C.P.

    2014-01-01

    In this paper we present a non-aqueous sol-gel route for the obtention of solid compounds and thin films of oxide type- perovskite ABO 3 , such as Ba 0.5 Pb 0.5 TiO 3 , synthesized by sol - gel route with subsequent heat treatment. The solid compounds were characterized by X-ray diffraction (XRD) techniques and thermal analysis (TGA / DTA). The thin film was obtained by using spin-coating techniques at low temperatures onto commercial substrates of polymethylmethacrylate (PMMA) and characterized by contact angle, atomic force microscopy (AFM) and scanning electron microscopy (SEM). The results show that the films present microstructures and roughness directly related to annealing temperatures, characterized by the formation of crystalline nanostructures with surface regularity and transparency. (author)

  5. Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

    KAUST Repository

    Pergolesi, Daniele

    2015-02-01

    Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

  6. Water degradation of a- and c-axis oriented HgBa2CaCu2Ox superconducting thin films

    International Nuclear Information System (INIS)

    Yun, S.H.; Karlsson, U.O.

    1997-01-01

    Degradation of HgBa 2 CaCu 2 O x superconducting thin films with a- and c-axis oriented normal to the substrates in water has been studied with electrical measurement, x-ray diffractometry, scanning electron microscopy, and energy dispersive x-ray spectrometry. We observed the different degradation behavior of a- and c-axis oriented HgBa 2 CaCu 2 O x thin films normal to substrates in water immersion experiments. The a-axis oriented films are much more stable than the c-axis oriented films in water. After a 60 min immersion, the zero-resistance temperature of the a-axis oriented film is still above 110 K, but the zero resistance is not observed in the c-axis oriented film in water even for 5 min. The intensity of (00l) peaks is suppressed at one order of magnitude faster than that of (l00) peaks as the total immersion time increase. copyright 1997 American Institute of Physics

  7. Vacancy-induced magnetism in BaTiO3(001) thin films based on density functional theory.

    Science.gov (United States)

    Cao, Dan; Cai, Meng-Qiu; Hu, Wang-Yu; Yu, Ping; Huang, Hai-Tao

    2011-03-14

    The origin of magnetism induced by vacancies on BaTiO(3)(001) surfaces is investigated systematically by first-principles calculations within density-functional theory. The calculated results show that O vacancy is responsible for the magnetism of the BaO-terminated surface and the magnetism of the TiO(2)-terminated surface is induced by Ti vacancy. For the BaO-terminated surface, the magnetism mainly arises from the unpaired electrons that are localized in the O vacancy basin. In contrast, for the TiO(2)-terminated surface, the magnetism mainly originates from the partially occupied O-2p states of the first nearest neighbor O atoms surrounding the Ti vacancy. These results suggest the possibility of implementing magneto-electric coupling in conventional ferroelectric materials.

  8. Fractal and multifractal characteristics of swift heavy ion induced self-affine nanostructured BaF{sub 2} thin film surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, R. P.; Mittal, A. K. [Department of Physics, University of Allahabad, Allahabad 211002 (India); Kumar, Manvendra, E-mail: kmanav@gmail.com; Pandey, A. C. [Nanotechnology Application Centre, University of Allahabad, Allahabad 211002 (India)

    2015-08-15

    Fractal and multifractal characteristics of self-affine surfaces of BaF{sub 2} thin films, deposited on crystalline Si 〈1 1 1〉 substrate at room temperature, were studied. Self-affine surfaces were prepared by irradiation of 120 MeV Ag{sup 9+} ions which modified the surface morphology at nanometer scale. The surface morphology of virgin thin film and those irradiated with different ion fluences are characterized by atomic force microscopy technique. The surface roughness (interface width) shows monotonic decrease with ion fluences, while the other parameters, such as lateral correlation length, roughness exponent, and fractal dimension, did not show either monotonic decrease or increase in nature. The self-affine nature of the films is further confirmed by autocorrelation function. The power spectral density of thin films surfaces exhibits inverse power law variation with spatial frequency, suggesting the existence of fractal component in surface morphology. The multifractal detrended fluctuation analysis based on the partition function approach is also performed on virgin and irradiated thin films. It is found that the partition function exhibits the power law behavior with the segment size. Moreover, it is also seen that the scaling exponents vary nonlinearly with the moment, thereby exhibiting the multifractal nature.

  9. Stoichiometry Calculation in BaxSr1−xTiO3 Solid Solution Thin Films, Prepared by RF Cosputtering, Using X-Ray Diffraction Peak Positions and Boltzmann Sigmoidal Modelling

    Directory of Open Access Journals (Sweden)

    J. Reséndiz-Muñoz

    2017-01-01

    Full Text Available A novel procedure based on the use of the Boltzmann equation to model the x parameter, the film deposition rate, and the optical band gap of BaxSr1−xTiO3 thin films is proposed. The BaxSr1−xTiO3 films were prepared by RF cosputtering from BaTiO3 and SrTiO3 targets changing the power applied to each magnetron to obtain different Ba/Sr contents. The method to calculate x consisted of fitting the angular shift of (110, (111, and (211 diffraction peaks observed as the density of substitutional Ba2+ increases in the solid solution when the applied RF power increases, followed by a scale transformation from applied power to x parameter using the Boltzmann equation. The Ba/Sr ratio was obtained from X-ray energy dispersive spectroscopy; the comparison with the X-ray diffraction derived composition shows a remarkable coincidence while the discrepancies offer a valuable diagnosis on the sputtering flux and phase composition. The proposed method allows a quick setup of the RF cosputtering system to control film composition providing a versatile tool to optimization of the process.

  10. X-ray photo-emission studies of Cu1-xTlxBa2Ca3Cu4O12-y superconductor thin films

    International Nuclear Information System (INIS)

    Khan, Nawazish A.; Mumtaz, M.; Ahadian, M.M.; Iraji-zad, Azam

    2006-01-01

    X-ray photo-emission spectroscopy (XPS) studies of Cu 1-x Tl x Ba 2 Ca 3 Cu 4 O 12-y superconductor thin films have been carried out for understanding the mechanism of superconductivity and to find out the reasons for the increase of zero resistivity critical temperature T c (R = 0) with post-annealing in a nitrogen atmosphere. It is observed from these studies that reduction of charge state of thallium is a source of doping of carriers to the CuO 2 planes. The reduced charge state of thallium (i.e. Tl 1+ ) promotes lower oxygen concentration in the charge reservoir layer, which possibly results in movement of electrons to the conducting CuO 2 planes. The higher density of electrons in the CuO 2 planes optimizes the hole concentration 'n p ' in these planes. The reduced charge state of thallium in the Cu 1-x Tl x Ba 2 O 4-δ charge reservoir layer is also supported by a shift of the Ba 3d 5/2 and Ba 3d 3/2 XPS lines to lower binding energies with post-annealing in nitrogen atmosphere. Moreover, the movement of the valance band spectrum to lower binding energies suggested that the electronic density of states changes in the valance band with the post-annealing in nitrogen, which possibly becomes a source of doping of carriers to the CuO 2 planes. The increased doping of electrons to the CuO 2 planes optimizes the Fermi-vector K F and Fermi-velocity V F of the carriers and increases the T c (R = 0) of final compound

  11. Superconducting YBa 2Cu 3O 7-δ -Ag Thin Films (TC( 0) = 90 K) by Pulsed Laser Deposition on Polycrystalline Ba 2NdNbO 6; A Novel Substrate for YBa 2Cu 3O 7-δ Films

    Science.gov (United States)

    Kurian, Jose; John, Asha; Sajith, Poo; Koshy, Jacob; Pai, Subash; Pinto, Richard

    1998-10-01

    The development and characterisation of \\ba, a novel ceramicsubstrate material for \\yb superconductor, are reported. \\ba hasa complex cubic perovskite structure [\\bb] with lattice constanta = 8.573Å. The dielectric properties of \\ba are in a rangesuitable for its use as a substrate for microwave applications.\\ba was found to have a thermal expansion coefficient of8.6× 10-6{ }\\circC-1 and a thermal conductivityof 87 W·m-1·K-1. Superconducting \\yb-Ag thin filmshave been grown in situ on polycrystalline \\ba by pulsedlaser ablation technique and the optimum conditions have beenestablished. The films exhibited (00l) orientation of anorthorhombic \\yb phase and gave a zero resistivitysuperconducting transition [TC(0)] at 90 K with atransition width of ˜1.5 K and JC ˜3×105 A/cm2 at 77 K.

  12. Superconducting properties and microstructures for Ba2SmNbO6 and BaHfO3 co-doped SmBa2Cu3O y thin films

    Science.gov (United States)

    Kusafuka, Yuma; Ichino, Yusuke; Tsuchiya, Yuji; Ichinose, Ataru; Yoshida, Yuatka

    2017-12-01

    Recently, we observed that Ba2SmNbO6 (BSNO), which has a double perovskite structure, forms wide nanorods in a SmBa2Cu3O y (SmBCO) film when compared with BaHfO3 (BHO) nanorods. These wide nanorods can trap flux quanta effectively in low magnetic fields; on the other hand, narrow nanorods can trap flux quanta in high magnetic fields. In this paper, we doped SmBCO films with BSNO and BHO with the aim of introducing both wide and narrow nanorods and bringing out the flux pinning properties in low and high magnetic fields simultaneously. We investigated their microstructures and superconducting properties, and as a result, we confirmed that wide and narrow nanorods could coexist in the SmBCO films. The wide and narrow nanorods trapped the flux quanta in different magnetic fields. We also explored the optimal composition for BSNO + BHO co-doped SmBCO films. These findings indicate that flux pinning properties can be tuned by the multiple doping of BMO materials.

  13. Buffer-layer enhanced crystal growth of BaB{sub 6} (1 0 0) thin films on MgO (1 0 0) substrates by laser molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kato, Yushi; Yamauchi, Ryosuke; Arai, Hideki; Tan, Geng [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J2-46, Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Tsuchimine, Nobuo; Kobayashi, Susumu [Toshima Manufacturing Company Limited, 1414 Shimonomoto, Higashimatsuyama-shi, Saitama 355-0036 (Japan); Saeki, Kazuhiko; Takezawa, Nobutaka [Department of Materials Technology, Industrial Technology Center of Tochigi Prefecture, 367-1 Karinuma, Utsunomiya-shi, Tochigi 321-3224 (Japan); Mitsuhashi, Masahiko; Kaneko, Satoru [Kanagawa Industrial Technology Center, Kanagawa Prefectural Government, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435 (Japan); Yoshimoto, Mamoru, E-mail: yoshimoto.m.aa@m.titech.ac.jp [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J2-46, Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Patent Attorney, Tokyo Institute of Technology, 4259-J2-46, Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)

    2012-02-01

    Crystalline BaB{sub 6} (1 0 0) thin films can be fabricated on MgO (1 0 0) substrates by inserting a 2-3 nm-thick epitaxial SrB{sub 6} (1 0 0) buffer layer by pulsed laser deposition (PLD) in ultra-high vacuum (i.e., laser molecular beam epitaxy). Reflection high-energy electron diffraction and X-ray diffraction measurements indicated the heteroepitaxial structure of BaB{sub 6} (1 0 0)/SrB{sub 6} (1 0 0)/MgO (1 0 0) with the single domain of the epitaxial relationship. Conversely, BaB{sub 6} thin films without the buffer layer were not epitaxial instead they developed as polycrystalline films with a random in-plane configuration and some impurity phases. As a result, the buffer layer is considered to greatly affect the initial growth of epitaxial BaB{sub 6} thin films; therefore, in this study, buffering effects have been discussed. From the conventional four-probe measurement, it was observed that BaB{sub 6} epitaxial thin films exhibit n-type semiconducting behavior with a resistivity of 2.90 Multiplication-Sign 10{sup -1} {Omega} cm at room temperature.

  14. Appearance and disappearance of ferromagnetism in ultrathin LaMnO3 on SrTiO3 substrate: A viewpoint from first principles

    Science.gov (United States)

    An, Ming; Weng, Yakui; Zhang, Huimin; Zhang, Jun-Jie; Zhang, Yang; Dong, Shuai

    2017-12-01

    The intrinsic magnetic state (ferromagnetic or antiferromagnetic) of ultrathin LaMnO3 films on the most commonly used SrTiO3 substrate is a long-existing question under debate. Either strain effect or nonstoichiometry was argued to be responsible for the experimental ferromagnetism. In a recent experiment [X. R. Wang, C. J. Li, W. M. Lü, T. R. Paudel, D. P. Leusink, M. Hoek, N. Poccia, A. Vailionis, T. Venkatesan, J. M. D. Coey, E. Y. Tsymbal, Ariando, and H. Hilgenkamp, Science 349, 716 (2015), 10.1126/science.aaa5198], one more mechanism, namely, the self-doping due to polar discontinuity, was argued to be the driving force of ferromagnetism beyond the critical thickness. Here systematic first-principles calculations have been performed to check these mechanisms in ultrathin LaMnO3 films as well as superlattices. Starting from the very precise descriptions of both LaMnO3 and SrTiO3, it is found that the compressive strain is the dominant force for the appearance of ferromagnetism, while the open surface with oxygen vacancies leads to the suppression of ferromagnetism. Within LaMnO3 layers, the charge reconstructions involve many competitive factors and certainly go beyond the intuitive polar catastrophe model established for LaAlO3/SrTiO3 heterostructures. Our paper not only explains the long-term puzzle regarding the magnetism of ultrathin LaMnO3 films but also sheds light on how to overcome the notorious magnetic dead layer in ultrathin manganites.

  15. Near-surface structural phase transition of SrTiO3 studied with zero-field beta-detected nuclear spin relaxation and resonance.

    Science.gov (United States)

    Salman, Z; Kiefl, R F; Chow, K H; Hossain, M D; Keeler, T A; Kreitzman, S R; Levy, C D P; Miller, R I; Parolin, T J; Pearson, M R; Saadaoui, H; Schultz, J D; Smadella, M; Wang, D; MacFarlane, W A

    2006-04-14

    We demonstrate that zero-field beta-detected nuclear quadrupole resonance and spin relaxation of low energy (8)Li can be used as a sensitive local probe of structural phase transitions near a surface. We find that the transition near the surface of a SrTiO(3) single crystal occurs at T(c) approximately 150K, i.e., approximately 45K higher than T(c)bulk, and that the tetragonal domains formed below T(c) are randomly oriented.

  16. Epitaxial growth of YBa2Cu307−δ films on SrTiO3 (100) by direct solution precursor deposition

    International Nuclear Information System (INIS)

    Bustamante, A; Garcia, Jorge; Osorio, Ana M; Valladares, Luis De Los Santos; Barnes, C H W; González, J C; Azuma, Y; Majima, Y; Aguiar, J Albino

    2014-01-01

    We study the optimal temperature to obtain YBa 2 Cu 3 O 7-δ epitaxial films grown onto SrTiO 3 substrates by direct solution deposition. The samples received heat treatment at 820, 840 and 860 °C, then characterized by XRD, observing the (00l) profiles; and magnetic susceptibility measurements. The T C-onset for all the samples was 90 K. In addition, the current – voltage (I-V) measurements shows typical tunneling signals corresponding to normal metal-superconducting junctions indicating the films are promising for potential electrical applications.

  17. Dominant role of oxygen vacancies in electrical properties of unannealed LaAlO3/SrTiO3 interfaces

    International Nuclear Information System (INIS)

    Liu, Z. Q.; Zeng, S. W.; Han, K.; Ariando; Sun, L.; Huang, Z.; Lü, W. M.; Li, C. J.; Venkatesan, T.

    2014-01-01

    We report that in unannealed LaAlO 3 /SrTiO 3 (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell, the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experimental results provide fundamental insights into the different roles played by oxygen vacancies and polarization catastrophe in the two-dimensional electron gas in crystalline LAO/STO heterostructures

  18. Suppression of the two-dimensional electron gas in LaGaO3/SrTiO3 by cation intermixing

    KAUST Repository

    Nazir, S.

    2013-12-03

    Cation intermixing at the n-type polar LaGaO 3 /SrTiO 3 (001) interface is investigated by first principles calculations. Ti"Ga, Sr"La, and SrTi"LaGa intermixing are studied in comparison to each other, with a focus on the interface stability. We demonstrate in which cases intermixing is energetically favorable as compared to a clean interface. A depopulation of the Ti 3d xy orbitals under cation intermixing is found, reflecting a complete suppression of the two-dimensional electron gas present at the clean interface.

  19. Large thermoelectric power factor in Pr-doped SrTiO3-δ ceramics via grain-boundary-induced mobility enhancement

    KAUST Repository

    Mehdizadeh Dehkordi, Arash

    2014-04-08

    We report a novel synthesis strategy to prepare high-performance bulk polycrystalline Pr-doped SrTiO3 ceramics. A large thermoelectric power factor of 1.3 W m-1 K-1 at 500 °C is achieved in these samples. In-depth investigations of the electronic transport and microstructure suggest that this significant improvement results from a substantial enhancement in carrier mobility originating from the formation of Pr-rich grain boundaries. This work provides new directions to higher performance oxide thermoelectrics as well as possibly other properties and applications of this broadly functional perovskite material. © 2014 American Chemical Society.

  20. Electric field control of the γ-Al2O3/SrTiO3 interface conductivity at room temperature

    DEFF Research Database (Denmark)

    Christensen, Dennis Valbjørn; Trier, Felix; von Soosten, Merlin

    2016-01-01

    Controlling interfaces using electric fields is at the heart of modern electronics. The discovery of the conducting interface between the two insulating oxides LaAlO3 (LAO) and SrTiO3 (STO) has led to a number of interesting electric field-dependent phenomena. Recently, it was shown that replacing...... LAO with a spinel γ-Al2O3 (GAO) allows a good pseudo-epitaxial film growth and high electron mobility at low temperatures. Here, we show that the GAO/STO interface resistance, similar to LAO/STO, can be tuned by orders of magnitude at room temperature using the electric field of a backgate...

  1. Structural defects and non-ferroelectric piezoelectricity in an unpoled SrTiO3–Bi12TiO20 (ST–BT) composite ceramics

    International Nuclear Information System (INIS)

    Zhang, L.J.; Wang, T.; Wang, L.H.; Liu, J.D.; Zhao, M.L.; Ye, B.J.

    2012-01-01

    Anomalous piezoelectricity SrTiO 3 –Bi 12 TiO 20 (ST–BT) composite ceramics fabricated by traditional sintering technology were first studied by positron annihilation lifetime spectroscopy and Doppler broadening spectroscopy. A large number of crystal defects were observed in ST–BT composite ceramics with the sintering temperature below 980 °C. The piezoelectric effect appeared concurrently with a high concentration of single-vacancy defects in the ceramics, suggesting that it may be closely related to the microstructure. This further proves that the flexoelectric effect is the origin of non-ferroelectric piezoelectricity.

  2. Field effect in perovskite heterostructures based on BaSnO3 and BaHfO3

    Science.gov (United States)

    Kim, Young Mo; Park, Chulkwon; Kim, Useong; Shin, Juyeon; Kim, Youjung; Char, Kookrin

    Perovskite La-doped BaSnO3 (BLSO) was reported to possess high electron mobility and excellent oxygen stability. We fabricated a field effect transistor on SrTiO3 substrate using BLSO as a channel layer and BaHfO3 (BHO) as a gate insulator. To reduce the threading dislocations and enhance the electrical properties of the channel, undoped BaSnO3 (BSO) buffer layer was grown on SrTiO3 substrates before the channel layer deposition. X-ray diffraction measurement confirms the epitaxial growth of BHO on BSO. We investigated optical and dielectric properties of the BHO gate insulator; the optical bandgap and the dielectric constant were measured to be 6.1 eV and 37.8, respectively. Using BHO as the gate insulator, we obtained the conductivity modulation in the channel by field effect. We will report on the electrical properties of the field effect transistor such as the output characteristics, the transfer characteristics, the Ion/Ioff ratio, the subthreshold swing and the field effect mobility.

  3. Growth of epitaxial Ba2YCu3O(7-delta) thin films and control of their superconducting properties

    International Nuclear Information System (INIS)

    Siegal, M.P.; Phillips, J.M.

    1992-01-01

    The relationship is experimentally defined between the superconducting behavior of Ba2YCu3O(7-delta) (BYCO) films and their structural characteristics. The BYCO films are grown on LaAlO3 100-plane by coevaporating BaF2, Y, and Cu followed by ex situ annealing, and the crystalline quality is tested by Rutherford backscattering ion channeling. SEM is employed to study film morphology, and several techniques are used to measure the transition temperature (Tc), critical current density (Jc), and the penetration length. It is found that point defects and dislocations decrease as the high-temperature stage (Ta) increases; crevices, pinholes, and microcracks are also noted which are related to specific values of Tc, Ta, and penetration length. The results of the present experiments indicate that the material properties of superconducting materials should be examined closely to distinguish between pure superconducting behavior and characteristics related to material structure. 21 refs

  4. Probing the Metal-Insulator Transition in BaTiO3 by Electrostatic Doping

    Science.gov (United States)

    Raghavan, Santosh; Zhang, Jack Y.; Shoron, Omor F.; Stemmer, Susanne

    2016-07-01

    The metal-to-insulator transition in BaTiO3 is investigated using electrostatic doping, which avoids effects from disorder and strain that would accompany chemical doping. SmTiO3/BaTiO3/SrTiO3 heterostructures are doped with a constant sheet carrier density of 3 ×1014 cm-2 that is introduced via the polar SmTiO3/BaTiO3 interface. Below a critical BaTiO3 thickness, the structures exhibit metallic behavior with high carrier mobilities at low temperatures, similar to SmTiO3/SrTiO3 interfaces. Above this thickness, data indicate that the BaTiO3 layer becomes ferroelectric. The BaTiO3 lattice parameters increase to a value consistent with a strained, tetragonal unit cell, the structures are insulating below ˜125 K , and the mobility drops by more than an order of magnitude, indicating self-trapping of carriers. The results shed light on the interplay between charge carriers and ferroelectricity.

  5. Strain profile and polarization enhancement in Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Amir, F.Z. [Physics Department, St John' s University, 8000 Utopia Pkwy, Jamaica, NY 11439 (United States); Donner, W. [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Aspelmeyer, M. [Vienna Center for Quantum Science and Technology, Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna (Austria); Noheda, B. [Department of Chemical Physics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen (Netherlands); Xi, X.X. [Physics Department, College of Science and Technology, Temple University, 1900 N.13th Street, Philadelphia, PA 19122 (United States); Moss, S.C. [Department of Physics, University of Houston, 617 Science and Research Building 1, Houston, Texas 77204-5005 (United States)

    2012-11-15

    The sensitivity of spontaneous polarization to epitaxial strain for both 10 and 50 nm thick Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BSTO) ferroelectric thin films has been studied. Crystal truncation rod (CTR) profiles in the 00L directions at different wavelengths, and grazing incidence diffraction (GID) in the 0K0 direction on a single crystal have been recorded. Modeling of the CTR data gives a detailed picture of the strain and provides clear evidence of the film out-of-plane expansion at the surface, an increase of the polarization, as well as a contraction at the interface. GID data confirm the fitting of the CTR, showing an in-plane expansion of the BSTO film at the interface and a contraction at the surface. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Anisotropic Proton and Oxygen Ion Conductivity in Epitaxial Ba2In2O5 Thin Films

    DEFF Research Database (Denmark)

    Fluri, Aline; Gilardi, Elisa; Karlsson, Maths

    2017-01-01

    Solid oxide oxygen ion and proton conductors are a highly important class of materials for renewable energy conversion devices like solid oxide fuel cells. Ba2In2O5 (BIO) exhibits both oxygen ion and proton conduction, in a dry and humid environment, respectively. In a dry environment......, the brownmillerite crystal structure of BIO exhibits an ordered oxygen ion sublattice, which has been speculated to result in anisotropic oxygen ion conduction. The hydrated structure of BIO, however, resembles a perovskite and the protons in it were predicted to be ordered in layers. To complement the significant...... theoretical and experimental efforts recently reported on the potentially anisotropic conductive properties in BIO, we measure here both the proton and oxygen ion conductivity along different crystallographic directions. Using epitaxial thin films with different crystallographic orientations, the charge...

  7. Misfit strain relaxation in (Ba0.60Sr0.40)TiO3 epitaxial thin films on orthorhombic NdGaO3 substrates

    Science.gov (United States)

    Simon, W. K.; Akdogan, E. K.; Safari, A.

    2006-07-01

    Strain relaxation in (Ba0.60Sr0.40)TiO3 (BST) thin films on ⟨110⟩ orthorhombic NdGaO3 substrates is investigated by x-ray diffractometry. Pole figure analysis indicates a [010]BST∥[1¯10]NGO and [001]BST∥[001]NGO in-plane and [100]BST∥[100]NGO out-of-plane epitaxial relationship. The residual strains are relaxed at h ˜200nm, and for h >600nm, films are essentially strain free. Two independent dislocations mechanisms operate to relieve the anisotropic misfit strains along the principal directions. The critical thickness for misfit dislocation formation along [001] and [010] are 11 and 15nm, respectively. Stress analysis indicates deviation from linear elasticity for h <200. The films with 10

  8. Phase-glass scaling near the coherence transition in granular HoBa{sub 2}Cu{sub 3}O{sub 7-{delta}} superconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Roa-Rojas, J.; Landinez Tellez, D.A. [Grupo de Fisica de Nuevos Materiales, Departamento de Fisica, Universidad Nacional de Colombia, A. A. 14490, Bogota DC (Colombia); Prieto, P. [Grupo de Peliculas Delgadas, Departamento de Fisica, Universidad del Valle, A. A. 25360, Cali (Colombia)

    2005-07-01

    Systematic measurements of electrical magnetoconductivity near the coherence transition of granular HoBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin films are reported. Experiments performed in magnetic fields ranging from 0 to 2500 Oe reveal that close to the coherence transition temperature T{sub c0}(H), the correlation length scales as a power law of temperature with a thermal-dependent critical exponent, {nu}. In low external fields the corresponding value of {nu} is consistent with the two-dimensional phase-glass model, which is in the same dynamical universality class of the so-called vortex-glass model. At applied fields H > 1000 Oe, the vortex dynamics becomes stronger and the coherence transition is not observed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Growth and superconducting properties of Y1Ba2Cu3O(7-delta) thin films sputtered on flexible YSZ substrates

    International Nuclear Information System (INIS)

    Takano, Satoshi; Hayashi, Noriki; Okuda, Shigeru; Hitotsuyanagi, Hajime; Hasegawa, Kiyoshi; Kisida, Takuya; Yamaguti, Jun

    1990-01-01

    Y1Ba2Cu3O(7-delta) thin films were grown on polycrystalline, flexible YSZ substrates by RF magnetron sputtering. A Tc(R = 0) of 90.3 K was obtained after annealing as the highest value. The films were composed of islands even at a film thickness of 2.4 microns, partially impinged on each other. Jc largely depended on the degree of island impingement. The effect of strain on the superconducting properties was investigated. Tc(R = 0) values raised as the compressive strain increased up to 0.3 percent, though they decreased as the tensile strain increased. Jc did not degrade under a compressive strain of 0.3 percent, though it degraded by 33 percent under a tensile strain of 0.3 percent. 3 refs

  10. Influence of grain size dispersion on the magnetic properties of nanogranular BaTiO3-CoFe2O4 thin films.

    Science.gov (United States)

    Barbosa, J; Almeida, B G; Mendes, J A; Leitão, D; Araújo, J P

    2009-06-01

    Thin film nanogranular composites of cobalt ferrite (CoFe2O4) dispersed in a barium titanate (BaTiO3) matrix were deposited by laser ablation with different cobalt ferrite concentrations (x). Their structural and magnetic properties were characterized. The films were polycrystalline and composed by a mixture of tetragonal-BaTiO3 and CoFe2O4 with the cubic spinel structure. A slight (111) barium titanate phase orientation and (311) CoFe2O4 phase orientation were observed. The lattice parameter of the CoFe2O4 was always smaller than the bulk value indicating that the cobalt ferrite was under compressive stress. From atomic force microscopy a broad distribution of grain sizes was observed in the nanocomposites, with a significant amount of smaller grains (magnetic measurements show an increase of the magnetic moment from the low concentration region where the magnetic grains are more isolated and their magnetic interaction is small, towards the bulk value for higher CoFe2O4 content in the films. A corresponding decrease of coercive field with increasing cobalt ferrite concentration was also observed, due to the higher inter-particle magnetic interaction (and reduced stress) of the agglomerated grains.

  11. Local structural origins of the distinct electronic properties of Nb-substituted SrTiO3 and BaTiO3

    Energy Technology Data Exchange (ETDEWEB)

    Proffen, Thomas E [Los Alamos National Laboratory; Page, Katharine L [UCSB; Kolodiazhnyi, Taras [NIMS, JAPAN; Cheetham, Anthony K [U CAMBRIDGE; Seshadri, R [UCSB

    2008-01-01

    Relating the minute details of crystal and defect structures to the properties of transition metal oxides is a central preoccupation in condensed matter science. Aiding in these efforts have been the many significant advances in high resolution and high momentum transfer neutron diffraction, which today provide unprecedented precision in describing the location of atoms in functional materials.

  12. Effect of thickness on the electrical and optical properties of epitaxial (La0.07Ba0.93)SnO3 thin films

    Science.gov (United States)

    Liu, Qinzhuang; Jin, Feng; Dai, Jianming; Li, Bing; Geng, Lei; Liu, Jianjun

    2016-08-01

    Transparent conductive oxide (La0.07Ba0.93)SnO3 (LBSO) thin films with thickness ranged from 220 nm to 11 nm were epitaxially grown on MgO substrate by pulsed laser deposition. The effect of thickness on the structural, transport, and optical properties of LBSO thin films was investigated in detail. With the film thickness decreasing, x-ray diffraction characterizations show that the LBSO (002) diffraction peak has no obvious shift, but the values of the full width at half maximum increase gradually from 0.608° to 1.136° due to the deterioration of crystalline quality of LBSO films. Atomic force microcopy reveals that the root-mean-square surface roughness of LBSO films decreases from 3.93 to 0.268 nm with film thickness decreasing. The lowest resistivity value of 1.181 × 10-4 Ωcm at room temperature was observed in 220 nm thick films, with the highest carrier mobility of 41.06 cm2 V-1 s-1 and carrier concentration of 8.377 × 1020 cm-3. Furthermore, the resistivity increases gradually with the decrease of LBSO film thickness. Temperature dependent resistivity measurements indicate that the metal-semiconductor transition temperature of LBSO thin film changes regularly with the film thickness. The optical band gap of LBSO thin film decreases from 4.58 to 3.55 eV with decreasing the thickness, which was explained by the Burstein-Moss effect.

  13. Interfacial B-site atomic configuration in polar (111) and non-polar (001) SrIrO3/SrTiO3 heterostructures

    Science.gov (United States)

    Anderson, T. J.; Zhou, H.; Xie, L.; Podkaminer, J. P.; Patzner, J. J.; Ryu, S.; Pan, X. Q.; Eom, C. B.

    2017-09-01

    The precise control of interfacial atomic arrangement in ABO3 perovskite heterostructures is paramount, particularly in cases where the subsequent electronic properties of the material exhibit geometrical preferences along polar crystallographic directions that feature inevitably complex surface reconstructions. Here, we present the B-site interfacial structure in polar (111) and non-polar (001) SrIrO3/SrTiO3 interfaces. The heterostructures were examined using scanning transmission electron microscopy and synchrotron-based coherent Bragg rod analysis. Our results reveal the preference of B-site intermixing across the (111) interface due to the polarity-compensated SrTiO3 substrate surface prior to growth. By comparison, the intermixing at the non-polar (001) interface is negligible. This finding suggests that the intermixing may be necessary to mitigate epitaxy along heavily reconstructed and non-stoichiometric (111) perovskite surfaces. Furthermore, this preferential B-site configuration could allow the geometric design of the interfacial perovskite structure and chemistry to selectively engineer the correlated electronic states of the B-site d-orbital.

  14. Significant enhancement in thermoelectric properties of polycrystalline Pr-doped SrTiO3−δ ceramics originating from nonuniform distribution of Pr dopants

    KAUST Repository

    Dehkordi, Arash Mehdizadeh

    2014-05-12

    Recently, we have reported a significant enhancement ( >70% at 500 °C) in the thermoelectric power factor (PF) of bulk polycrystalline Pr-doped SrTiO3 ceramics employing a novel synthesis strategy which led to the highest ever reported values of PF among doped polycrystalline SrTiO3. It was found that the formation of Pr-rich grain boundary regions gives rise to an enhancement in carrier mobility. In this Letter, we investigate the electronic and thermal transport in Sr1− x Pr x TiO3 ceramics in order to determine the optimum doping concentration and to evaluate the overall thermoelectric performance. Simultaneous enhancement in the thermoelectric power factor and reduction in thermal conductivity in these samples resulted in more than 30% improvement in the dimensionless thermoelectric figure of merit (ZT) for the whole temperature range over all previously reported maximum values. Maximum ZT value of 0.35 was obtained at 500 °C.

  15. Atomic-scale measurement of structure and chemistry of a single-unit-cell layer of LaAlO3 embedded in SrTiO3.

    Science.gov (United States)

    Jia, Chun-Lin; Barthel, Juri; Gunkel, Felix; Dittmann, Regina; Hoffmann-Eifert, Susanne; Houben, Lothar; Lentzen, Markus; Thust, Andreas

    2013-04-01

    A single layer of LaAlO3 with a nominal thickness of one unit cell, which is sandwiched between a SrTiO3 substrate and a SrTiO3 capping layer, is quantitatively investigated by high-resolution transmission electron microscopy. By the use of an aberration-corrected electron microscope and by employing sophisticated numerical image simulation procedures, significant progress is made in two aspects. First, the structural as well as the chemical features of the interface are determined simultaneously on an atomic scale from the same specimen area. Second, the evaluation of the structural and chemical data is carried out in a fully quantitative way on the basis of the absolute image contrast, which has not been achieved so far in materials science investigations using high-resolution electron microscopy. Considering the strong influence of even subtle structural details on the electronic properties of interfaces in oxide materials, a fully quantitative interface analysis, which makes positional data available with picometer precision together with the related chemical information, can contribute to a better understanding of the functionality of such interfaces.

  16. Fabrication of Multiferroic Co-Substituted BiFeO3 Epitaxial Films on SrTiO3 (100 Substrates by Radio Frequency Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Yasuo Ando

    2011-06-01

    Full Text Available The 10 at.% Co-substituted BiFeO3 films (of thickness 50 nm were successfully prepared by radio frequency (r.f. magnetron sputtering on SrTiO3 (100 substrates with epitaxial relationships of [001](001Co-BiFeO3//[001](001SrTiO3. In this study, a single phase Co-substituted BiFeO3 epitaxial film was fabricated by r.f. magnetron sputtering. Sputtering conditions such as Ar, O2 gas pressure, annealing temperature, annealing atmosphere, and sputtering power were systematically changed. It was observed that a low Ar gas pressure and low sputtering power is necessary to suppress the formation of the secondary phases of BiOx. The Co-substituted BiFeO3 films were crystalized with post-annealing at 600 °C in air. The process window for single phase films is narrower than that for pure BiFeO3 epitaxial films. By substituting Fe with Co in BiFeO3, the magnetization at room temperature increased to 20 emu/cm3. This result suggests that Co-substituted BiFeO3 films can be used in spin-filter devices.

  17. Interfacial B-site atomic configuration in polar (111 and non-polar (001 SrIrO3/SrTiO3 heterostructures

    Directory of Open Access Journals (Sweden)

    T. J. Anderson

    2017-09-01

    Full Text Available The precise control of interfacial atomic arrangement in ABO3 perovskite heterostructures is paramount, particularly in cases where the subsequent electronic properties of the material exhibit geometrical preferences along polar crystallographic directions that feature inevitably complex surface reconstructions. Here, we present the B-site interfacial structure in polar (111 and non-polar (001 SrIrO3/SrTiO3 interfaces. The heterostructures were examined using scanning transmission electron microscopy and synchrotron-based coherent Bragg rod analysis. Our results reveal the preference of B-site intermixing across the (111 interface due to the polarity-compensated SrTiO3 substrate surface prior to growth. By comparison, the intermixing at the non-polar (001 interface is negligible. This finding suggests that the intermixing may be necessary to mitigate epitaxy along heavily reconstructed and non-stoichiometric (111 perovskite surfaces. Furthermore, this preferential B-site configuration could allow the geometric design of the interfacial perovskite structure and chemistry to selectively engineer the correlated electronic states of the B-site d-orbital.

  18. Selective Inactivation of Bacteriophage in the Presence of Bacteria by Use of Ground Rh-Doped SrTiO3Photocatalyst and Visible Light.

    Science.gov (United States)

    Yamaguchi, Yuichi; Usuki, Sho; Kanai, Yoshihiro; Yamatoya, Kenji; Suzuki, Norihiro; Katsumata, Ken-Ichi; Terashima, Chiaki; Suzuki, Tomonori; Fujishima, Akira; Sakai, Hideki; Kudo, Akihiko; Nakata, Kazuya

    2017-09-20

    Bacteriophage (denoted as phage) infection in the bacterial fermentation industry is a major problem, leading to the loss of fermented products such as alcohol and lactic acid. Currently, the prevention of phage infection is limited to biological approaches, which are difficult to apply in an industrial setting. Herein, we report an alternative chemical approach using ground Rh-doped SrTiO 3 (denoted as g-STO:Rh) as a visible-light-driven photocatalyst. The g-STO:Rh showed selective inactivation of phage without bactericidal activity when irradiated with visible light (λ > 440 nm). After inactivation, the color of g-STO:Rh changed from gray to purple, suggesting that the Rh valence state partially changed from 3+ to 4+ induced by photocatalysis, as confirmed by diffuse reflectance spectroscopy. To study the effect of the Rh 4+ ion on phage inactivation under visible-light irradiation, the survival rate of phage for g-STO:Rh was compared to that for ground Rh,Sb-codoped SrTiO 3 (denoted as g-STO:Rh,Sb), where the change of Rh valence state from 3+ to 4+ is almost suppressed under visible-light irradiation due to charge compensation by the Sb 5+ ion. Only g-STO:Rh effectively inactivated phage, which indicated that Rh 4+ ion induced by photocatalysis particularly contributed to phage inactivation under visible-light irradiation. These results suggested that g-STO:Rh has potential as an antiphage material in bacterial fermentation.

  19. Quantification of flexoelectricity in PbTiO3/SrTiO3 superlattice polar vortices using machine learning and phase-field modeling.

    Science.gov (United States)

    Li, Q; Nelson, C T; Hsu, S-L; Damodaran, A R; Li, L-L; Yadav, A K; McCarter, M; Martin, L W; Ramesh, R; Kalinin, S V

    2017-11-13

    Flexoelectricity refers to electric polarization generated by heterogeneous mechanical strains, namely strain gradients, in materials of arbitrary crystal symmetries. Despite more than 50 years of work on this effect, an accurate identification of its coupling strength remains an experimental challenge for most materials, which impedes its wide recognition. Here, we show the presence of flexoelectricity in the recently discovered polar vortices in PbTiO 3 /SrTiO 3 superlattices based on a combination of machine-learning analysis of the atomic-scale electron microscopy imaging data and phenomenological phase-field modeling. By scrutinizing the influence of flexocoupling on the global vortex structure, we match theory and experiment using computer vision methodologies to determine the flexoelectric coefficients for PbTiO 3 and SrTiO 3 . Our findings highlight the inherent, nontrivial role of flexoelectricity in the generation of emergent complex polarization morphologies and demonstrate a viable approach to delineating this effect, conducive to the deeper exploration of both topics.

  20. A study on structure, morphology, optical properties, and photocatalytic ability of SrTiO3/TiO2 granular composites

    Science.gov (United States)

    Thi Mai Oanh, Le; Xuan Huy, Nguyen; Thi Thuy Phuong, Doan; Danh Bich, Do; Van Minh, Nguyen

    2018-03-01

    (1-x)SrTiO3-xTiO2 granular composites with x=0.3, 0.4, 0.5, 0.6, 0.7, and 0.8 were synthesized by sol-gel process. Structure, morphology, optical properties, and photocatalytic activity were investigated in detail using x-ray diffraction (XRD) analysis, Raman scattering, field-emission scanning electron microscopy (FE-SEM), Transmission Electron Microscopy (TEM), ultraviolet-visible (UV-vis) absorption spectra, and photoluminescence (PL). XRD analysis showed the formation of single phase for parent phases and the present of two component phases in all composites without any impurity. A tight cohesion between TiO2 and SrTiO3 (STO) at grain boundary region was inferred from lattice parameter change of STO. Moreover, FE-SEM images revealed a granular structure of composite in which SrTiO3 particles were surrounded by smaller TiO2 nanoparticles. As TiO2 concentration increased, absorption edge firstly shifted to the left for composite with x=0.3 and then shifted gradually to the right with further increasing of TiO2 content from 30 mol% to 80 mol%. Composites exhibited a stronger photocatalytic activity than parent phases, with the highest efficiency at 50 mol% of TiO2. PL analysis result showed that the recombination rate of photogenerated electron-hole pairs decreased in composite sample, which partly explained the enhanced photocatalytic property.

  1. Hydrogen production over Au-loaded mesoporous-assembled SrTiO3 nanocrystal photocatalyst: Effects of molecular structure and chemical properties of hole scavengers

    International Nuclear Information System (INIS)

    Puangpetch, Tarawipa; Chavadej, Sumaeth; Sreethawong, Thammanoon

    2011-01-01

    Graphical abstract: Formic acid, which is the smallest and completely-dissociated water-soluble carboxylic acid, exhibited the highest hydrogen production enhancement ability over the 1 wt.% Au-loaded mesoporous-assembled SrTiO 3 nanocrystal photocatalyst. Display Omitted Research highlights: → The 1 wt.% Au-loaded mesoporous-assembled SrTiO 3 nanocrystal photocatalyst was synthesized. → The molecular structure and chemical properties of hole scavengers affected H 2 production rate. → Formic acid exhibited the highest photocatalytic H 2 production enhancement ability. -- Abstract: The hydrogen production via the photocatalytic water splitting under UV irradiation using different compounds as hole scavengers (including methanol, formic acid, acetic acid, propanoic acid, hydrochloric acid, and sulfuric acid) under a low concentration range ( 3 nanocrystal photocatalyst. The results indicated that the hydrogen production efficiency greatly depended on the molecular structure, chemical properties, and concentration of the hole scavengers. Formic acid, which is the smallest and completely-dissociated water-soluble carboxylic acid, exhibited the highest hydrogen production enhancement ability. The 2.5 vol.% aqueous formic acid solution system provided the highest photocatalytic hydrogen production rate.

  2. Concurrent La and A-Site Vacancy Doping Modulates the Thermoelectric Response of SrTiO3: Experimental and Computational Evidence.

    Science.gov (United States)

    Azough, Feridoon; Jackson, Samuel S; Ekren, Dursun; Freer, Robert; Molinari, Marco; Yeandel, Stephen R; Panchmatia, Pooja M; Parker, Stephen C; Maldonado, David Hernandez; Kepaptsoglou, Demie M; Ramasse, Quentin M

    2017-12-06

    To help understand the factors controlling the performance of one of the most promising n-type oxide thermoelectric SrTiO 3 , we need to explore structural control at the atomic level. In Sr 1-x La 2x/3 TiO 3 ceramics (0.0 ≤ x ≤ 0.9), we determined that the thermal conductivity can be reduced and controlled through an interplay of La-substitution and A-site vacancies and the formation of a layered structure. The decrease in thermal conductivity with La and A-site vacancy substitution dominates the trend in the overall thermoelectric response. The maximum dimensionless figure of merit is 0.27 at 1070 K for composition x = 0.50 where half of the A-sites are occupied with La and vacancies. Atomic resolution Z-contrast imaging and atomic scale chemical analysis show that as the La content increases, A-site vacancies initially distribute randomly (x thermal conductivity, an important route to enhancement of the thermoelectric performance. A computational study confirmed that the thermal conductivity of SrTiO 3 is lowered by the introduction of La and A-site vacancies as shown by the experiments. The modeling supports that a critical mass of A-site vacancies is needed to reduce thermal conductivity and that the arrangement of La, Sr, and A-site vacancies has a significant impact on thermal conductivity only at high La concentration.

  3. Thin films sputtered from Ba{sub 2}NdFeNb{sub 4}O{sub 15} multiferroic targets on BaFe{sub 12}O{sub 19} coated substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bodeux, Romain [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Michau, Dominique, E-mail: dominique.michau@icmcb.cnrs.fr [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Maglione, Mario; Josse, Michaël [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France)

    2016-09-15

    Highlights: • Synthesis of Ba{sub 2}NdFeNb{sub 4}O{sub 15}/BaFe{sub 12}O{sub 19} (BaM) heterostructures by RF magnetron sputtering. • Growth of TTB layer were retained regardless of the underlayer (Pt bottom electrode or BaM). • Dielectric and magnetic properties were obtained from the Pt/TTB/BaM/Pt stacks. - Abstract: Ba{sub 2}NdFeNb{sub 4}O{sub 15} tetragonal tungsten bronze (TTB)/BaFe{sub 12}O{sub 19} (BaM) hexaferrite bilayers have been grown by RF magnetron sputtering on Pt/TiO{sub 2}/SiO{sub 2}/Si (PtS) substrates. The BaM layer is textured along (0 0 1) while the TTB layer is multioriented regardless of the PtS or BaM/PtS substrate. Dielectric properties of TTB films are similar to those of bulk, i.e., ε ∼ 150 and a magnetic hysteresis loop is obtained from TTB/BaM bilayers, thanks to the BaM component. This demonstrates the possibility of transferring to 2 dimensional structures the composite multiferroic system TTB/BaM previously identified in 3 dimensional bulk ceramics.

  4. Dielectric properties of BaMg1∕3Nb2∕3O3 doped Ba0.45Sr0.55Tio3 thin films for tunable microwave applications

    Directory of Open Access Journals (Sweden)

    Fikadu Alema

    2015-12-01

    Full Text Available Ba(Mg1∕3Nb2∕3O3 (BMN doped and undoped Ba0.45Sr0.55TiO3 (BST thin films were deposited via radio frequency magnetron sputtering on Pt/TiO2/SiO2/Al2O3 substrates. The surface morphology and chemical state analyses of the films have shown that the BMN doped BST film has a smoother surface with reduced oxygen vacancy, resulting in an improved insulating properties of the BST film. Dielectric tunability, loss, and leakage current (LC of the undoped and BMN doped BST thin films were studied. The BMN dopant has remarkably reduced the dielectric loss (∼38% with no significant effect on the tunability of the BST film, leading to an increase in figure of merit (FOM. This is attributed to the opposing behavior of large Mg2+ whose detrimental effect on tunability is partially compensated by small Nb5+ as the two substitute Ti4+ in the BST. The coupling between MgTi″ and VO•• charged defects suppresses the dielectric loss in the film by cutting electrons from hopping between Ti ions. The LC of the films was investigated in the temperature range of 300–450K. A reduced LC measured for the BMN doped BST film was correlated to the formation of defect dipoles from MgTi″, VO•• and NbTi• charged defects. The carrier transport properties of the films were analyzed in light of Schottky thermionic emission (SE and Poole–Frenkel (PF emission mechanisms. The result indicated that while the carrier transport mechanism in the undoped film is interface limited (SE, the conduction in the BMN doped film was dominated by bulk processes (PF. The change of the conduction mechanism from SE to PF as a result of BMN doping is attributed to the presence of uncoupled NbTi• sitting as a positive trap center at the shallow donor level of the BST.

  5. YBCO thin film formation near the stability line by resistive evaporation of BaF{sub 2}, Cu, and Y

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J. [Center for Technological Education Holon (Israel)

    1996-02-01

    A single resistivity heated source was used to deposit a mixture of BaF{sub 2}, Cu, and Y to form precursor films onto MgO substrates held at room temperature. Different heat treatment conditions were applied to study the stability diagram of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}. It was found that the stability line is shifted toward the higher oxygen partial pressure and lower temperature side of the pure YBCO line in the presence of fluorine and fluorides in the precursor. Films of good quality were obtained when the annealing conditions were in close proximity to this line.

  6. Novel applications of Tl-Ca-Ba-Cu-O thin films to active and passive high frequency devices

    Energy Technology Data Exchange (ETDEWEB)

    Martens, J.S.; Ginley, D.S.; Zipperian, T.E.; Hietala, V.M.; Tigges, C.P.

    1990-01-01

    We will present our recent work on the applications of high temperature superconducting thin films to the development of new passive and active circuitry operating up to 40 GHz. We will discuss thin film deposition (including new results on the effect of low temperature anneals) a patterning Tl-based films to linewidths of 3 {mu}m, and contacting. A number of HTS device will be discussed including passive resonators and filters and an active device, the superconducting flux flow transistor (SFFT), that can be used in applications such as amplifiers and phase shifters. 14 refs., 7 figs.

  7. Strain-controlled optical absorption in epitaxial ferroelectric BaTiO.sub.3./sub. films

    Czech Academy of Sciences Publication Activity Database

    Chernova, Ekaterina; Pacherová, Oliva; Chvostová, Dagmar; Dejneka, Alexandr; Kocourek, Tomáš; Jelínek, Miroslav; Tyunina, Marina

    2015-01-01

    Roč. 106, č. 19 (2015), "192903-1"-"192903-4" ISSN 0003-6951 R&D Projects: GA ČR GA15-13778S; GA ČR GA15-15123S Institutional support: RVO:68378271 Keywords : thin-films * polarization * evolution * SrTiO 3 Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.142, year: 2015

  8. Preparation of very thin superconducting films of Y-Ba-Cu-O by a layer-by-layer resistive evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J.; Goldschmidt, D. (Raymond and Beverly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel Aviv University, Tel Aviv 69978, Israel, and Center for Technological Education, Holon, P.O. Box 305, Holon 58680, Israel (IL)); Brener, R. (Solid State Institute, Technion, Israel Institute of Technology, Haifa 3200, Israel)

    1989-10-15

    We report here on 1/4 -{mu}m-thick superconducting Y-Ba-Cu-O films, produced by a sequential layer-by-layer deposition of Cu, BaF{sub 2}, and YF{sub 3}, utilizing solely resistive evaporation from tungsten boats onto SrTiO{sub 3} substrates. The films are composed primarily of quasioriented elongated grains and have, on the average, the correct stoichiometry. A transition onset at 75 K and width of {similar to}25 K have been observed in these films. The shape of the current-voltage curve indicates that Josephson-coupled weak links limit the transport in these films. However, the magnitude of critical current (3000 A/cm{sup 2} at {similar to}10 K) is larger than that found in bulk ceramic superconductors. The origin of weak links in these films is probably in the regions of contact between the elongated grains. The relatively large critical current density, as compared to regular bulk ceramic superconductors, is presumably related to the quasioriented nature of the film.

  9. Nickel sulfide/graphitic carbon nitride/strontium titanate (NiS/g-C3N4/SrTiO3) composites with significantly enhanced photocatalytic hydrogen production activity.

    Science.gov (United States)

    Luo, Xiu-Li; He, Gang-Ling; Fang, Yue-Ping; Xu, Yue-Hua

    2018-05-15

    NiS/g-C 3 N 4 /SrTiO 3 (NS/CN/STO) composites were prepared using a facile hydrothermal method. The synergistic effect of g-C 3 N 4 /SrTiO 3 (CN/STO) heterojunction and NiS cocatalyst enhanced the photocatalytic hydrogen evolution activity of NS/CN/STO. A hydrogen production rate of 1722.7 μmol h -1  g -1 was obtained when the 2%NiS/20%g-C 3 N 4 /SrTiO 3 (2NS/20CN/STO) was used for the photocatalytic hydrogen evolution in the presence of methanol used as a sacrificial agent under UV-vis light irradiation; the photocatalytic hydrogen production rate of 2NS/20CN/STO is 32.8, 8.9 and 4.2 times the value of that obtained with pure g-C 3 N 4 , SrTiO 3 and 20%g-C 3 N 4 /SrTiO 3 (20CN/STO), respectively. Moreover, in photoelectrochemical investigations when compared with 20CN/STO, SrTiO 3 and g-C 3 N 4 , 2NS/20CN/STO exhibited significant photocurrent enhancement. The heterojunction and cocatalyst in NS/CN/STO improved the charge separation efficiency and the lifetime of the charge carriers, leading to the enhanced generation of electrons for photocatalytic hydrogen production. Copyright © 2018 Elsevier Inc. All rights reserved.

  10. Effect of Zn-doping on the structural and optical properties of BaTiO3 thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Fasasi, A.Y.; Maaza, M.; Rohwer, E.G.; Knoessen, D.; Theron, Ch.; Leitch, A.; Buttner, U.

    2008-01-01

    Thin films of zinc oxide doped barium titanate (BaZn x Ti 1-x O 3 ) have been prepared by pulsed laser ablation using different targets having zinc composition varying between x = 1 to 5 wt.% at a step of 1 wt.% on corning glass microscope slide and silicon substrates. X-ray diffraction analyses showed films to be of tetragonal phase with an average grain size of 20 nm and c/a ratio of 1.08 indicating lattice expansion due to ZnO incorporation. Atomic force microscopy studies of the prepared thin films indicated smooth surfaces with average roughness of 1.84 and 4.6 nm for as-deposited and sintered specimens respectively. Scanning electron microscopy showed films to be smooth and uniform. UV-Visible as well as Fourier Transform Infrared transmission measurements showed a transmission of more than 80% in the visible and 5-20% in the near infrared. The transmittance is strongly affected by annealing. There is a dependence of band gap energy on film thickness as well as on the amount of ZnO added. High ZnO dopant level led to an increase in the band gap

  11. Effect of Zn-doping on the structural and optical properties of BaTiO{sub 3} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fasasi, A.Y. [Centre for Energy Research and Development, Obafemi Awolowo University, Ile-Ife, Osun State (Nigeria); Nano-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation, P. O. Box 722, Somerset West 7129 (South Africa)], E-mail: ayfasasi@yahoo.co.uk; Maaza, M. [Nano-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation, P. O. Box 722, Somerset West 7129 (South Africa); Rohwer, E.G. [Laser Research Institute, Department of Physics, University of Stellenbosch, Stellenbosch, Western Cape (South Africa); Knoessen, D. [Department of Physics, University of Western Cape, Private Bag X1001, Belville (South Africa); Theron, Ch. [Nano-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation, P. O. Box 722, Somerset West 7129 (South Africa); Leitch, A. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Buttner, U. [Department of Electrical Engineering, University of Stellenbosch, Stellenbosch, Western Cape (South Africa)

    2008-07-31

    Thin films of zinc oxide doped barium titanate (BaZn{sub x}Ti{sub 1-x}O{sub 3}) have been prepared by pulsed laser ablation using different targets having zinc composition varying between x = 1 to 5 wt.% at a step of 1 wt.% on corning glass microscope slide and silicon substrates. X-ray diffraction analyses showed films to be of tetragonal phase with an average grain size of 20 nm and c/a ratio of 1.08 indicating lattice expansion due to ZnO incorporation. Atomic force microscopy studies of the prepared thin films indicated smooth surfaces with average roughness of 1.84 and 4.6 nm for as-deposited and sintered specimens respectively. Scanning electron microscopy showed films to be smooth and uniform. UV-Visible as well as Fourier Transform Infrared transmission measurements showed a transmission of more than 80% in the visible and 5-20% in the near infrared. The transmittance is strongly affected by annealing. There is a dependence of band gap energy on film thickness as well as on the amount of ZnO added. High ZnO dopant level led to an increase in the band gap.

  12. Preparation of thin-film (Ba(0.5),Sr(0.5))TiO3 by the laser ablation technique and electrical properties

    Science.gov (United States)

    Yoon, Soon-Gil; Lee, Jai-Chan; Safari, A.

    1994-09-01

    The chemical composition and electrical properties were investigated for epitaxially crystallized (Ba(0.5),Sr(0.5))TiO3 (BST) films deposited on Pt/MgO and YBa2Cu3O(7-x) (YBCO)/MgO substrates by the laser ablation technique. Rutherford backscattering spectroscopy analysis shows that thin films on Pt/MgO have almost the same stoichiometric composition as the target material. Films deposited at 600 C exhibited an excellent epitaxial growth, a dielectric constant of 430, and a dissipation factor of 0.02 at 10 kHz frequency. They have a charge storage density of 40 fC/sq micron at an applied electric field of 0.15 MV/cm. Leakage current density of BST thin films on Pt/MgO was smaller than on YBCO/MgO. Their leakage current density is about 0.8 microA/sq cm at an applied electric field of 0.15 MV/cm.

  13. Optimization of Nd1+xBa2-xCu3O7 thin-film growth conditions using micro-Raman spectroscopy

    International Nuclear Information System (INIS)

    Bae, J S; Yang, In-Sang; Jo, W; Wee, S H; Yoo, S I

    2006-01-01

    We explore optimal growth conditions for superconducting Nd 1+x Ba 2-x Cu 3 O 7 (NdBCO) thin films deposited under various oxygen pressures in the range of 100-800 mTorr. In this study we address spatial inhomogeneity, growth orientation, impurity phases, cation disorder, and oxygen deficiency of NdBCO thin films by using micro-Raman scattering. The films grown in the low oxygen pressure range of 100-200 mTorr show predominantly a-axis orientation and degraded superconducting properties with a critical temperature (T c ) of ∼80 K. The degradation of the transition temperature of the films deposited at lower oxygen pressure is attributed to the cation disorder, on the basis of analysis of the apical oxygen Raman mode. On the other hand, the samples grown in the higher oxygen pressure range of 400-800 mTorr show strong c-axis orientation and much less cation disorder. These features correlate with their high values of T c and J c

  14. Band-offsets at BaTiO3/Cu2O heterojunction and enhanced photoelectrochemical response: theory and experiment(Conference Presentation)

    Science.gov (United States)

    Sharma, Dipika; Satsangi, Vibha R.; Dass Kaura, Sahab; Shrivastav, Rohit; Waghmare, Umesh V.

    2016-10-01

    Band-offsets at BaTiO3/Cu2O heterojunction and enhanced photoelectrochemical response: theory and experiment Dipika Sharmaa, Vibha R. Satsangib, Rohit Shrivastava, Umesh V. Waghmarec, Sahab Dassa aDepartment of Chemistry, Dayalbagh Educational Institute, Agra-282 110 (India) bDepartment of Physics and Computer Sciences, Dayalbagh Educational Institute, Agra-282 110 (India) cTheoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore-560 064 (India) * Phone: +91-9219695960. Fax: +91-562-2801226. E-mail: drsahabdas@gmail.com. Study on photoelectrochemical activity of pristine BaTiO3, Cu2O and BaTiO3/Cu2O heterojunction has been carried out using DFT based band offsets and charge carriers effective mass calculations and their experimental verification. The results of DFT calculations show that BaTiO3 and Cu2O have staggered type band alignment after the heterojunction formation and high mobility of electrons in Cu2O as compared to the electrons in BaTiO3. Staggered type band edges alignment and high mobility of electrons and holes improved the separation of photo-generated charge carriers in BaTiO3/Cu2O heterojunction. To validate the theoretical results experiments were carried out on pristine BaTiO3, Cu2O and BaTiO3/Cu2O heterojunction with varying thickness of Cu2O. All samples were characterized by X- Ray Diffractometer, SEM and UV-Vis spectrometry. Nanostructured thin films of pristine BaTiO3, Cu2O and BaTiO3/Cu2O heterojunction were used as photoelectrode in the photoelectrochemical cell for water splitting reaction. Maximum photocurrent density of 1.44 mA/cm2 at 0.90 V/SCE was exhibited by 442 nm thick BaTiO3/Cu2O heterojunction photoelectrode Increased photocurrent density and enhanced photoconversion efficiency, exhibited by the heterojunction may be attributed to improved conductivity and enhanced separation of the photogenerated carriers at the BaTiO3/Cu2O interface. The experimental results and first

  15. Microstructure defects mediated charge transport in Nb-doped epitaxial BaTiO3 thin films

    Science.gov (United States)

    Zhou, Jian; Jing, Xiaosai; Alexe, Marin; Dai, Jiyan; Qin, Minghui; Wu, Sujuan; Zeng, Min; Gao, Jinwei; Lu, Xubing; Liu, J.-M.

    2016-05-01

    Nb-doped BaTiO3 (BNTO) films were deposited on MgO substrates at different substrate temperatures by pulsed laser deposition. The temperature dependence of their resistivity, carrier mobility and carrier concentration were systematically investigated. It reveals that the BNTO films deposited at lower temperature show higher resistivity and lower carrier mobility, and only show semiconductor characteristics at measurement temperatures ranging from 10 to 400 K. There is a metal-semiconductor transition at about 20 K for the films grown at relatively higher temperature. The intrinsic mechanism responsible for the different charge transport behavior was revealed by microstructure studies. Low crystal quality and high density of microstructure defects, observed for BNTO films grown at low temperatures, are, in particular, massively affecting the charge transport behavior of the BNTO films. The mediated charge transport of the microstructure defects is dominated by the thermal excitation process.

  16. Growth of ferroelectric CaBi_2Ta_2O9 Thin Film Using rf Magnetron Sputtering

    Science.gov (United States)

    Peng, Jin; Huang, Z. J.; Jiang, Q. D.; Brazdeikis, A.; Zhang, Z. H.; Liu, J. R.; Chu, W. K.; Chu, C. W.

    1998-03-01

    Ferroelectric CaBi_2Ta_2O_9(CBTO) films were deposited at various temperature on SrTiO_3(001) and SrTiO_3(111), MgO(001) and R-cut sapphire and Pt-buffered SrTiO3 (001) and SrTi O_3(111), MgO(001) and R-cut sapphire substrate by rf magnetron sputtering. It is found that crystallinity and chemical composition of CBTO thin films were strongly dependent on substrate and temperature. X-ray diffraction, scanning electron microscopy, atomic force microscopy and rutherford backscattering were employed to examine the structure, surface morphology and composition. In addition, comparisons of growth orientation and stoichiometry between CBTO and SrBi_2Ta_2O9 were made.

  17. Local conductivity and the role of vacancies around twin walls of (001)-BiFeO3 thin films

    NARCIS (Netherlands)

    Farokhipoor, S.; Noheda, Beatriz

    2012-01-01

    BiFeO3 thin films epitaxially grown on SrRuO3-buffered (001)-oriented SrTiO3 substrates show orthogonal bundles of twin domains, each of which contains parallel and periodic 71 degrees domain walls. A smaller amount of 109 degrees domain walls are also present at the boundaries between two adjacent

  18. Depth dependence of the structural phase transition of SrTiO3 studied with β-NMR and grazing incidence x-ray diffraction

    Science.gov (United States)

    Salman, Z.; Smadella, M.; Macfarlane, W. A.; Patterson, B. D.; Willmott, P. R.; Chow, K. H.; Hossain, M. D.; Saadaoui, H.; Wang, D.; Kiefl, R. F.

    2011-06-01

    We present an investigation of the near-surface tetragonal phase transition in SrTiO3, using the complementary techniques of beta-detected nuclear magnetic resonance and grazing-incidence X-ray diffraction. The results show a clear depth dependence of the phase transition on scales of a few microns. The measurements support a model in which there are tetragonal domains forming in the sample at temperatures much higher than the bulk phase transition temperature. Moreover, we find that these domains tend to form at higher temperatures preferentially near the free surface of the crystal. The details of the tetragonal domain formation and their depth/lateral dependencies are discussed.

  19. Single-crystal SrTiO3 fiber grown by laser heated pedestal growth method: influence of ceramic feed rod preparation in fiber quality

    Directory of Open Access Journals (Sweden)

    D. Reyes Ardila

    1998-10-01

    Full Text Available The rapidly spreading use of optical fiber as a transmission medium has created an interest in fiber-compatible optical devices and methods for growing them, such as the Laser Heated Pedestal Growth (LHPG. This paper reports on the influence of the ceramic feed rod treatment on fiber quality and optimization of ceramic pedestal processing that allows improvements to be made on the final quality in a simple manner. Using the LHPG technique, transparent crack-free colorless single crystal fibers of SrTiO3 (0.50 mm in diameter and 30-40 mm in length were grown directly from green-body feed rods, without using external oxygen atmosphere.

  20. O deficient LaAlO3/SrTiO3(110) and (001) superlattices under hydrostatic pressure: a comparative first principles study

    KAUST Repository

    Albar, Arwa

    2017-03-17

    We compare the electronic properties of O deficient LaAlO3/SrTiO3 superlattices oriented along the (001) and (110) directions, taking into account the effect of hydrostatic compression and tension. Interfacial O vacancies turn out to be less likely in the case of the (110) orientation, with compression (tension) reducing (enhancing) the energy cost for both orientations. The presence of O vacancies results in the formation of a two-dimensional electron gas, for which we observe a distinct spatial pattern of carrier density that depends strongly on the amount of applied pressure. We clarify the interrelation between structural features and the properties of this electron gas (confinement, carrier density, and mobility).

  1. Spatially modulated magnetic structure of EuS due to the tetragonal domain structure of SrTiO3 APS

    CERN Document Server

    Rosenberg, Aaron J.; Kirtley, John R.; Gedik, Nuh; Moodera, Jagadeesh S.; Moler, Kathryn A.

    2017-12-15

    The combination of ferromagnets with topological superconductors or insulators allows for new phases of matter that support excitations such as chiral edge modes and Majorana fermions. EuS, a wide-bandgap ferromagnetic insulator with a Curie temperature around 16 K, and SrTiO3 (STO), an important substrate for engineering heterostructures, may support these phases. We present scanning superconducting quantum interference device measurements of EuS grown epitaxially on STO that reveal micron-scale variations in ferromagnetism and paramagnetism. These variations are oriented along the STO crystal axes and only change their configuration upon thermal cycling above the STO cubic-to-tetragonal structural transition temperature at 105 K, indicating that the observed magnetic features are due to coupling between EuS and the STO tetragonal structure. We speculate that the STO tetragonal distortions may strain the EuS, altering the magnetic anisotropy on a micron scale. This result demonstrates that local variation in...

  2. Metal-insulator transition at the LaAlO3/SrTiO3 interface revisited: A hybrid functional study

    KAUST Repository

    Cossu, Fabrizio

    2013-07-17

    We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid functional to determine the electronic structure. This approach offers the distinct advantage of accessing both the metallic and insulating multilayers on a parameter-free equal footing. As compared to calculations based on semilocal GGA functionals, our hybrid functional calculations lead to a considerably increased band gap for the insulating systems. The details of the electronic structure show substantial deviations from those obtained by GGA calculations. This casts severe doubts on all previous results based on semilocal functionals. In particular, corrections using rigid band shifts (“scissors operator”) cannot lead to valid results.

  3. Joint effect of gate bias and light illumination on metallic LaAlO3/SrTiO3 interface

    Science.gov (United States)

    Yang, Zhihuan; Chen, Yuansha; Zhang, Hongrui; Huang, Hailin; Wang, Shufang; Wang, Shuanhu; Shen, Baogen; Sun, Jirong

    2017-12-01

    We presented a systemic investigation on the joint effect of gate bias and light illumination on a metallic LaAlO3/SrTiO3 interface in the temperature range from 15 K to 300 K. We showed that the photo excitation significantly enhanced the gating effect for the metallic two-dimensional electron gas. However, its effect is strongly temperature dependent; it is strong at low and high temperatures, and weak in the intermediate temperature range. There are evidences that the amplified gating effect stemmed from enhanced carrier depletion while the Hall mobility remains nearly unaffected. Acceleration of the gating process, together with a training effect marked by a strong dependence on gating history of the getting effect, is induced by repeating the electric cycling, indicating atomic reconfiguration due to oxygen migration and the memory of the migration paths.

  4. ZnO Nanorods on a LaAlO 3 -SrTiO 3 Interface: Hybrid 1D-2D Diodes with Engineered Electronic Properties

    KAUST Repository

    Bera, Ashok

    2015-12-28

    Integrating nanomaterials with different dimensionalities and properties is a versatile approach toward realizing new functionalities in advanced devices. Here, a novel diode-type heterostructure is reported consisting of 1D semiconducting ZnO nanorods and 2D metallic LaAlO3-SrTiO3 interface. Tunable insulator-to-metal transitions, absent in the individual components, are observed as a result of the competing temperature-dependent conduction mechanisms. Detailed transport analysis reveals direct tunneling at low bias, Fowler-Nordheim tunneling at high forward bias, and Zener breakdown at high reverse bias. Our results highlight the rich electronic properties of such artificial diodes with hybrid dimensionalities, and the design principle may be generalized to other nanomaterials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Dielectric relaxation in epitaxial films of paraelectric-magnetic SrTiO3-SrMnO3 solid solution

    Science.gov (United States)

    Savinov, M.; Bovtun, V.; Tereshina-Chitrova, E.; Stupakov, A.; Dejneka, A.; Tyunina, M.

    2018-01-01

    Magneto-dielectric properties of (A2+)MnO3-type perovskites are attractive for applications and stimulate extensive studies of these materials. Here, the complex dielectric and magnetic responses are investigated as in epitaxial films of SrTi0.6Mn0.4O3, solid solution of paraelectric SrTiO3 and magnetic SrMnO3. The impedance and resonance measurements at frequencies of 10-2-1010 Hz and temperatures of 10-500 K reveal broad dielectric anomalies centered at 100-200 K, while the films are paramagnetic at all temperatures. Analysis shows polaronic electrical conductivity behind the observed behavior. Electron-phonon correlations, rather than spin-phonon correlations, are suggested to produce the apparent magneto-dielectric responses in many multiferroic manganites.

  6. Symmetry and Non-empirical Calculations of Structure and Properties of Single- and Double-Wall SrTiO3 Nanotubes

    Science.gov (United States)

    Evarestov, R. A.; Bandura, A. V.

    A large-scale first-principles simulation of the structure and stability of SrTiO3 single- and double-wall nanotubes with different chiralities has been performed for the first time using the periodic PBE0 LCAO method. The initial structures of nanotubes have been obtained by rolling up slabs consisting of two and four alternating (001) SrO and TiO2 planes. In the majority of the considered cases the inner or outer TiO2 shells of 4-layer nanotubes undergo a considerable reconstruction due to shrinkage or stretching of interatomic distances. Double-wall nanotubes constructed from 2-layer single-wall nanotubes with the intertube distance less than 4.5-5.0 Å merge to stable polyhedron-shaped tubular objects consisting of blocks with a distorted cubic perovskite structure.

  7. Evidence of weak superconductivity at the room-temperature grown LaAlO3/SrTiO3 interface

    DEFF Research Database (Denmark)

    Prawiroatmodjo, G. E. D. K.; Trier, Felix; Christensen, Dennis Valbjørn

    2016-01-01

    The two-dimensional electron gas at the crystalline LaAlO3/SrTiO3 (c-LAO/STO) interface has sparked large interest due to its exotic properties, including an intriguing gate-tunable superconducting phase. While there is growing evidence of pronounced spatial inhomogeneity in the conductivity at STO......-based interfaces, the consequences for superconductivity remain largely unknown. We study interfaces based on amorphous LAO top layers grown at room temperature (a-LAO/STO) and demonstrate a superconducting phase similar to c-LAO/STO, however, with a gate-tunable critical temperature of 460 mK. The dependence...... of the superconducting critical current on temperature, magnetic field, and back-gate-controlled doping is found to be consistently described by a model of a random array of Josephson-coupled superconducting domains....

  8. Giant Negative Magnetoresistance Driven by Spin-Orbit Coupling at the LaAlO3/SrTiO3 Interface.

    Science.gov (United States)

    Diez, M; Monteiro, A M R V L; Mattoni, G; Cobanera, E; Hyart, T; Mulazimoglu, E; Bovenzi, N; Beenakker, C W J; Caviglia, A D

    2015-07-03

    The LaAlO3/SrTiO3 interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (dropping by 70%), attributed to a magnetic-field induced transition between interacting phases of conduction electrons with Kondo-screened magnetic impurities. Here we report on experiments over a broad temperature range, showing the persistence of the magnetoresistance up to the 20 K range--indicative of a single-particle mechanism. Motivated by a striking correspondence between the temperature and carrier density dependence of our magnetoresistance measurements we propose an alternative explanation. Working in the framework of semiclassical Boltzmann transport theory we demonstrate that the combination of spin-orbit coupling and scattering from finite-range impurities can explain the observed magnitude of the negative magnetoresistance, as well as the temperature and electron density dependence.

  9. Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3/SrTiO3 superlattices

    International Nuclear Information System (INIS)

    Wang, L.M.; Guo, C.-C.

    2005-01-01

    The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 (LSMO/STO) superlattices grown by a rf sputtering system are systematically analyzed to study the spin polarization of manganite at interfaces. The presence of positive low-temperature AMR in LSMO/STO superlattices implies that two bands of majority and minority character contribute to the transport properties, leading to a reduced spin polarization. Furthermore, the magnetization of superlattices follows the T 3/2 law and decays more quickly as the thickness ratio d STO /d LSMO increases, corresponding to a reduced exchange coupling. The results clearly show that the spin polarization is strongly correlated with the influence of interface-induced strain on the structure

  10. Closed-circuit domain quadruplets in BaTiO.sub.3./sub. nanorods embedded in a SrTiO.sub.3./sub. film

    Czech Academy of Sciences Publication Activity Database

    Stepkova, Vilgelmina; Márton, Pavel; Setter, N.; Hlinka, Jiří

    2014-01-01

    Roč. 89, č. 6 (2014), "060101-1"-"060101-6" ISSN 1098-0121 R&D Projects: GA ČR(CZ) GAP204/11/1011 Institutional support: RVO:68378271 Keywords : Ginzburg-Landau-Devonshire model * phase-field approach * nanorods * BaTiO 3 /SrTiO 3 heterostructures Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  11. Effect of Hf addition on critical current density of (Y,Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} thin films prepared by trifluoroacetate metal organic deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, M.Y., E-mail: limengyaorz@163.com [Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, 99 Shangda Road, Shanghai University, Shanghai 200444 (China); Liu, Z.Y. [Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, 99 Shangda Road, Shanghai University, Shanghai 200444 (China); Shanghai Creative Superconductor Technologies Co. Ltd., Shanghai 201401 (China); Fang, Q. [Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, 99 Shangda Road, Shanghai University, Shanghai 200444 (China); Guo, Y.Q.; Lu, Y.M.; Bai, C.Y. [Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, 99 Shangda Road, Shanghai University, Shanghai 200444 (China); Shanghai Creative Superconductor Technologies Co. Ltd., Shanghai 201401 (China); Cai, C.B., E-mail: cbcai@t.shu.edu.cn [Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, 99 Shangda Road, Shanghai University, Shanghai 200444 (China); Shanghai Creative Superconductor Technologies Co. Ltd., Shanghai 201401 (China)

    2016-12-15

    Highlights: • This work firstly introduce the Eu and Hf co-doping effect on the performance of YBa{sub 2}Cu{sub 3.6}O{sub 7-δ} thin films, prepared on oxide buffered metallic substrates by trifluoroacetate metal organic deposition (TFA-MOD). • (Y, Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} film showed a very different surface morphology, smooth and regular, compared to YBa{sub 2}Cu{sub 3.6}O{sub 7-δ} thin film, which has never been reported before. • The J{sub c} value under self-field of (Y, Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} thin film was obviously improved compared to YBa{sub 2}Cu{sub 3.6}O{sub 7-δ} thin film. • (Y, Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} thin film with Hf addition exhibited enhancement of J{sub c} value under magnetic fields. - Abstract: The critical current density (J{sub c}) performance of YBCO coated conductors (CCs) under magnetic field has become a considerable limitation for its commercial application in recent years. It is well known that the proper amount of element doping into the CCs is a convenient method to increase flux pinning and then to enhance the J{sub c}. In the present work, we firstly introduce the co-doping of Eu and Hf and study the effect on the performance of YBa{sub 2}Cu{sub 3.6}O{sub 7-δ} thin films. Three types of high temperature superconducting thin films, i.e., YBa{sub 2}Cu{sub 3.6}O{sub 7-δ}, (Y,Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} and Hf doped (Y,Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} were prepared on the oxide buffered metallic substrates by using trifluoroacetate metal organic deposition (TFA-MOD). The component and structure of the as-prepared samples were characterized by X-ray diffraction (XRD), scanning electronic microscopy (SEM) and atomic force microscopy (AFM). Superconducting properties were measured with a SQUID magnetometer. It was revealed that the (Y,Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} thin films exhibit better out-plane and in-plane texture compared with the pure YBa{sub 2}Cu{sub 3.6}O{sub 7-δ} thin

  12. Microstructures and improved J c-H characteristics of Cl-containing YBCO thin films prepared by the fluorine-free MOD method

    Science.gov (United States)

    Motoki, Takanori; Shimoyama, Jun-ichi; Ogino, Hiraku; Kishio, Kohji; Roh, Jiyoung; Tohei, Tetsuya; Ikuhara, Yuichi; Horii, Shigeru; Doi, Toshiya; Honda, Genki; Nagaishi, Tatsuoki

    2016-01-01

    Undoped, Cl-doped, (Cl, Hf) co-doped and (Cl, Sn) co-doped YBa2Cu3O y (YBCO) thin films have been prepared by the fluorine-free metal-organic decomposition (FF-MOD) method on SrTiO3(100) single-crystalline substrates. Cross-sectional microstructures of these films were investigated in detail using scanning transmission electron microscopy (STEM). Rectangular-shaped oxychloride precipitates (Ba2Cu3O4Cl2) and fine particles (BaSnO3) were clearly observed in the (Cl, Sn) co-doped films. The magnetic angular dependence of the critical current density (J c-H-θ) of these films was evaluated. The existence of c-axis-correlated type pinning centers was suggested in Cl-containing YBCO films, whereas this type of pinning is not common in MOD-processed films. J c values were enhanced by Cl doping and further by (Cl, Sn) co-doping in all magnetic field directions at 77 K. This improved J c-H-θ property with c-axis-correlated pinning sites is the first report in FF-MOD-processed YBCO films.

  13. Fully Distributed Tunable Bandpass Filter Based on Ba0.5Sr0.5TiO3 Thin-Film Slow-Wave Structure

    Directory of Open Access Journals (Sweden)

    Sébastien L. Delprat

    2011-01-01

    Full Text Available This paper presents simulation and measurement results of fully distributed tunable coplanar bandpass filters (BPFs with center frequencies around 6 GHz that make use of ferroelectric Barium Strontium Titanate (BaxSr1−xTiO3 or BST-x thin film as tunable material. The two experimental bandpass filters tested are based on a novel frequency-agile structure composed of cascaded half wavelength slow-wave resonators (2 poles and three coupled interdigital capacitors (IDCs optimized for bias voltage application. Devices with gap dimensions of 10 and 3 μm are designed and fabricated with a two-step process on polycrystalline Ba0.5Sr0.5TiO3 thin films deposited on alumina substrate. A frequency tunability of 9% is obtained for the 10 μm gap structure at ±30 V with 7 dB insertion loss (the BST dielectric tunability being 26% with 0.04 loss tangent for this gap size. When the structure gap is reduced to 3 μm the center frequency shifts with a constant 9 dB insertion loss from 6.95 GHz at 0 V to 9.05 GHz at ±30 V, thus yielding a filter tunability of 30% (the BST dielectric tunability being 60% with 0.04 loss tangent for this gap size, a performance comparable to some extent to localized or lumped element BPFs operating at microwave frequency (>2 GHz.

  14. Ce-doping effects on electronic structures of Ba0.5Sr0.5TiO3 thin film

    International Nuclear Information System (INIS)

    Wang, S Y; Cheng, B L; Wang, Can; Button, T W; Dai, S Y; Jin, K J; Lu, H B; Zhou, Y L; Chen, Z H; Yang, G Z

    2006-01-01

    In order to clarify the basic reason why Ce doping can dramatically decrease the leakage current in Ba 0.5 Sr 0.5 TiO 3 (BST) as reported in our previous work (Wang et al 2005 J. Phys. D: Appl. Phys. 38 2253), we have employed x-ray photoelectron spectroscopy (XPS) and the optical transmittance technique to study the electronic structure of undoped and 1.0 at% Ce-doped BST (CeBST) films fabricated by pulsed laser deposition. XPS results show that Ce doping has a strong influence on the valence band and core levels of BST films, and that the Fermi level is lowered by about 0.35 eV by Ce doping. Optical transmittance measurements demonstrate that the energy gap is expanded with Ce doping. These Ce-doping effects can induce an increase in the barrier height for the thermionic emission and eventually reduce leakage current in CeBST thin films

  15. Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-//sub delta/ thin films grown by a simple spray deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, A.; Koren, G.; Giess, E.A.; Moore, N.R.; O' Sullivan, E.J.M.; Cooper, E.I.

    1988-01-11

    The preparation of high T/sub c/ superconducting thin films of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-//sub delta/ on (100) single crystals of MgO, ZrO/sub 2/ with 9% Y/sub 2/O/sub 3/ (yttria stabilized zirconia, or YSZ), and SrTiO/sub 3/ using a simple spray deposition technique is described. Typical film growth procedure involves (a) the spraying of a stoichiometric solution of the nitrate precursors on the heated substrate (180 /sup 0/C), (b) prebaking in air of the sprayed film (20 min at 500 /sup 0/C), and (c) oven annealing of the film under flowing O/sub 2/ (900--950 /sup 0/C followed by slow cooling to 200 /sup 0/C in about 3 h). X-ray diffraction analysis of the films after each of the growing steps mentioned above shows primarily the presence of crystalline phases of the nitrates, the oxides, and the orthorhombic superconducting phase, respectively. Resistivity versus temperature measurements show that the onset and completion of the superconductive transition occur at 92 and 87 K, respectively, in films on YSZ substrate; at 95 and 80 K, respectively, in films on SrTiO/sub 3/ substrate; and at 82 and 77 K, respectively, in films on MgO substrate.

  16. Dielectric properties of Ba0.6Sr0.4TiO3 thin films deposited by mist plasma evaporation using aqueous solution precursor

    Science.gov (United States)

    Huang, Hui; Shi, Peng; Wang, Minqiang; Yao, Xi; Tan, O. K.

    2006-06-01

    Mist plasma evaporation (MPE) technique has been developed to deposit Ba0.6Sr0.4TiO3 (BST) thin films on SiO2/Si and Pt/Ti/SiO2/Si substrates at atmospheric pressure using metal nitrate aqueous solution as precursor. MPE is characterized by the injection of liquid reactants into thermal plasma where the source materials in the droplets are evaporated by the high temperature of the thermal plasma. Nanometer-scale clusters are formed in the tail flame of the plasma, and then deposited and rearranged on the substrate at a lower temperature. Due to the high temperature annealing process of the thermal plasma before deposition, well-crystallized BST films were deposited at substrate temperature of 630 °C. The dielectric constant and dielectric loss of the film at 100 kHz are 715 and 0.24, respectively. Due to the good crystallinity of the BST films deposited by MPE, high dielectric tunability up to 39.3% is achieved at low applied electric field of 100 kV cm-1.

  17. Correlation of irreversibility and vortex solid melting for Ti nBa 2Ca 2Cu 3O x (n = 1, 2) thin films

    Science.gov (United States)

    Hyun, O. B.; Suhara, H.; Nabatame, T.; Koike, S.; Hirabayashi, I.

    1995-08-01

    The transport measurements were performed for the Tl nBa 2Ca 2Cu 3O x (n = 1, 2) thin films in magnetic fields. The resistive state could be approximately described by the thermally activated form, ϱ ˜ exp[- {U(H,T)}/{k BT }] , where U(H,T) ∝ (const. + T)H -α with α ≈ 0.5 ˜ 0.6. This form, however, appreciably deviates from the data for low dissipation and high fields. As for the viscosity of the supercooled liquid, the divergence of U well described the behavior, particularly, of the low dissipation state for all fields, implying the presence of the vortex solid. The log(V) - log(I) characteristics revealed the curvature change, which defines the vortex solid (glass) - liquid melting temperature T m. Both the irreversibility line and the melting line showed approximately the same T dependence, H α ˜ T -1, which is from the thermally activated form. This correlation suggests that the irreversibility line appropriately figures the vortex solid (glass) - liquid melting line.

  18. Fabrication and characterization of high-quality (Hg,Re)Ba sub 2 CaCu sub 2 O sub y thin films on LSAT substrates

    CERN Document Server

    Ogawa, A; Sugano, T; Adachi, S; Suzuki, K; Nakagaki, N; Enomoto, Y; Tanabe, K

    2002-01-01

    We have succeeded in fabricating high-quality (Hg,Re)Ba sub 2 CaCu sub 2 O sub y ((Hg,Re)-1212) thin films with a thickness of 300 nm on (LaAlO sub 3) sub 0 sub . sub 3 -(SrAl sub 0 sub . sub 5 Ta sub 0 sub . sub 5 O sub 3) sub 0 sub . sub 7 (LSAT) substrates. The films were fabricated by repeating the two-step process, which consists of the preparation of a precursor film and the heat treatment in Hg-vapour atmosphere. For the purpose of improving their crystal quality, the heat treatment in the final process was carried out in a lower Hg-vapour pressure for a longer time. The obtained films had a flat surface and no appreciable outgrowth. The films exhibited a T sub c value of 120 K and a J sub c value of 4.4 x 10 sup 6 A cm sup - sup 2 at 77 K in a self-field, which are substantially higher than those for the films fabricated in higher Hg-vapour atmosphere. Their electrical transport properties in magnetic fields up to 7 T were investigated. Their lower irreversibility fields at 77 K as well as the higher ...

  19. Effects of Nb and Sr doping on crystal structure of epitaxial BaTiO3 thin films on MgO substrates

    International Nuclear Information System (INIS)

    Kim, Yongsam; Chen, Chunhua; Saiki, Atsushi; Wakiya, Naoki; Shinozaki, Kazuo; Mizutani, Nobuyasu

    2002-01-01

    Niobium (Nb) and strontium (Sr) doped barium titanate (BT) films were deposited by radio frequency (RF) magnetron sputtering with Nb and Sr doped BT ceramic targets, respectively. The effect of Nb and Sr doping on the crystal structure of epitaxial BaTiO 3 thin films on MgO substrates was investigated. The crystal structure of the films was examined using the reciprocal space mapping measurement. All the films exhibit a cube-on-cube relation with respect to the substrates. As the amount of doped Sr increased, both of the in-plane and out-of-plane lattice constants of Sr doped BT films slowly approached the BT bulk values. On the other hand, the lattice constants of Nb doped BT films were rapidly coming close to the bulk values. These indicated that the lattices of doped BT films were relaxed as the amount of doped elements increased. In addition, Nb doping had greater influence on the relaxation of the films than Sr doping for the same content of dopant. (author)

  20. Effects of oxygen partial pressure on the ferroelectric properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films

    Science.gov (United States)

    Silva, J. P. B.; Sekhar, K. C.; Almeida, A.; Agostinho Moreira, J.; Pereira, M.; Gomes, M. J. M.

    2013-11-01

    The Ba0.8Sr0.2TiO3 thin films were grown on the Pt-Si substrate at 700 °C by using a pulsed laser deposition technique at different oxygen partial pressure (PO2) in the range of 1-20 Pa and their properties were investigated. It is observed that the PO2 during the deposition plays an important role on the tetragonal distortion ratio, surface morphology, dielectric permittivity, ferroelectric polarization, switching response, and leakage currents of the films. With an increase in PO2, the in-plane strain for the BST films changes from tensile to compressive. The films grown at 7.5 Pa show the optimum dielectric and ferroelectric properties and also exhibit the good polarization stability. It is assumed that a reasonable compressive strain, increasing the ionic displacement, and thus promotes the in-plane polarization in the field direction, could improve the dielectric permittivity. The butterfly features of the capacitance-voltage ( C- V) characteristics and the bell shape curve in polarization current were attributed to the domain reversal process. The effect of pulse amplitude on the polarization reversal behavior of the BST films grown at PO2 of 7.5 Pa was studied. The peak value of the polarization current shows exponential dependence on the electric field.

  1. Modification of temperature dependence of dielectric properties by symmetry-controlled superlattice thin films of BaZrxTi1-xO3

    International Nuclear Information System (INIS)

    Kawahara, Toshio; Ohno, Takahiro; Doi, Atsuhiro; Tabata, Hitoshi; Kawai, Tomoji; Hino, Takanori

    2006-01-01

    Symmetry-controlled ferroelectric superlattice thin films of BaZr x Ti 1-x O 3 (BZT) were fabricated by a pulse laser deposition (PLD) technique. To reduce the strain effects, we used 5-layer systems of BZT with x=0, 0.25, 0.5, 0.75, and 1; we call these A, B, C, D, and E, respectively. We made two types of superlattice film, namely, ABCDE/ABCDE and ABCDE/EDCBA, where the total concentration of Zr was the same. The former exhibits symmetry breaking as in perovskite structures. In contrast, the latter has symmetry introduced by artificial structures. Superlattices show clear satellite peaks in XRD patterns and the structures are also confirmed by electron microscopy images. ABCDE/ABCDE films have larger relative permittivities than the ABCDE/EDCBA films. This property seems to be the symmetry effects in the superlattice structures. Both films have a weak temperature dependence near room temperature by the superlattice effects, which seems to be better for the application of the materials. (author)

  2. Degradation of Y1Ba2Cu3O(7-x) thin epitaxial films in aqueous medium and control of degradation using polymer overlayers deposited by pulsed excimer laser

    Science.gov (United States)

    Kale, Sangeeta; Swaminathan, Madhavi; Ogale, S. B.

    Superconducting thin films of Y1Ba2Cu3O(7-x) were deposited onto Y-ZrO2 substrates by pulsed excimer (lambda = 248 nm) laser ablation. The deposited films were exposed to the aqueous medium for different durations of time ranging from 15 min to 42 h. The degradation of Y1Ba2Cu3O(7-x) epitaxial films was studied by X-ray diffraction and measurements of the transition temperature T(sub c). In a separate set of experiments, subsequent to deposition of superconducting films, thin layers (0.1 - 1 micron) of polymer (polyacrylonitrile) were deposited onto the films without breaking vacuum. The sandwiches were subjected to the same aqueous treatment. It was observed that degradation effects were passified by the polymer overlayer.

  3. Internal residual stress studies and enhanced dielectric properties in La0.7Sr0.3CoO3 buffered (Ba,Sr)TiO3 thin films

    Science.gov (United States)

    Lu, Shengbo; Xu, Zhengkui

    2009-09-01

    Ba0.6Sr0.4TiO3 (BST) thin films were deposited on La0.7Sr0.3CoO3 (LSCO) buffered and unbuffered Pt (111)/Ti/SiO2/Si substrates by pulsed laser deposition. The former exhibits a (100) preferred orientation and the latter a random orientation, respectively. Grazing incident x-ray diffraction study revealed that the tensile residual stress observed in the latter is markedly reduced in the former. As a result, the dielectric property of the LSCO buffered BST thin film is greatly improved, which shows a larger dielectric constant and tunability, smaller loss tangent, and lower leakage current than those of the unbuffered BST thin film. The relaxation of the larger tensile residual stress is attributed to the larger grain size in the buffered BST thin film and to a closer match of thermal expansion coefficient between the BST and the LSCO buffer layer.

  4. First-principles analysis of electron transport in BaSnO3

    Science.gov (United States)

    Krishnaswamy, Karthik; Himmetoglu, Burak; Kang, Youngho; Janotti, Anderson; Van de Walle, Chris G.

    2017-05-01

    BaSnO3 (BSO) is a promising transparent conducting oxide with reported room-temperature (RT) Hall mobility exceeding 320 cm2V-1s-1 . Among perovskite oxides, it has the highest RT mobility, about 30 times higher than that of the prototypical SrTiO3. Using first-principles calculations based on hybrid density functional theory, we elucidate the physical mechanisms that govern the mobility by studying the details of LO-phonon and ionized impurity scattering. A careful numerical analysis to obtain converged results within the relaxation-time approximation of Boltzmann transport theory is presented. The k dependence of the relaxation time is fully taken into account. We find that the high RT mobility in BSO originates not only from a small effective mass, but also from a significant reduction in the phonon scattering rate compared to other perovskite oxides; the origins of this reduction are identified. Ionized impurity scattering influences the total mobility even at RT for dopant densities larger than 5 ×1018cm-3 , and becomes comparable to LO-phonon scattering for 1 ×1020cm-3 doping, reducing the drift mobility from its intrinsic LO-phonon-limited value of ˜594 cm2V-1s-1 to less than 310 cm2V-1s-1 . We suggest pathways to avoid impurity scattering via modulation doping or polar discontinuity doping. We also explicitly calculate the Hall factor and Hall mobility, allowing a direct comparison to experimental reports for bulk and thin films and providing insights into the nature of the dominant mechanisms that limit mobility in state-of-the art samples.

  5. Effects of Sr2+ doping on the electrical properties of (Bi0.5Na0.50.94Ba0.06TiO3 ceramics

    Directory of Open Access Journals (Sweden)

    Amrita Singh

    2015-03-01

    Full Text Available The influence of SrTiO3 addition on the microstructure and various electrical properties of (Bi0.5Na0.50.94Ba0.06TiO3 (BNTBT6 ceramics, fabricated by a conventional high temperature solid state reaction, was investigated. Analysis of X-ray diffraction patterns revealed the formation of phase pure materials with tetragonal unit cell structure, tetragonality parameter c/a in the interval from 0.9940 to 1.0063 and crystallite sizes ranging from 33–76 nm for addition of 0.2 to 1 wt.% of SrTiO3. SEM studies indicated that Sr2+ doping led to decrease in grain size and non-homogeneity of grain distribution for higher SrTiO3 amount (>0.6 wt.%. Complex impedance, modulus, and conductivity studies indicated the presence of grains and grain boundary contribution, non-Debye type of relaxation and NTCR behaviour of the test ceramic samples. Temperature dependent real part of complex permittivity showed peaks at 475 °C and the dielectric loss tangent showed peaks corresponding to 125 °C and 475 °C for almost all compositions. AC activation energies, computed using Arrhenius relation in the temperature range of 325–500 °C for the BNTBT6 ceramic compositions having SrTiO3 concentration from 0.2 to 1.0 wt.%, were seen to have maximal values at the lowest measurement frequency. Amongst the different chosen doped BNTBT6 ceramic compositions, the composition having 0.6 wt.% of SrTiO3 showed the best ferroelectric and piezoelectric response with maximum value of Pr (8.24 µC/cm2, minimum value of Ec (5.73 kV/mm and maximum d33 value (∼46 pC/N.

  6. Effect of BaZrO3/Ag hybrid doping to the microstructure and performance of fluorine-free MOD method derived YBa2Cu3O7−x superconducting thin films

    DEFF Research Database (Denmark)

    Tang, Xiao; Yue, Zhao; Wu, W.

    2015-01-01

    It is known that BaZrO3 and Ag can improve the magnetic and transport performance of YBCO thin film through totally disparate ways. BaZrO3 plays the role of flux pinning centers and Ag improves the transparency of the YBCO grain boundaries. However, similar research is rare on the fluorine-free d...

  7. La0,7Sr0,3MnO3 thin layers on SrTiO3(001) substrate. Structure and Mn valence

    International Nuclear Information System (INIS)

    Riedl, Thomas

    2007-01-01

    This thesis presents a highly spatially resolved characterization of crystal structure and Mn valence by pictures drawn in the TEM and electron-energy-loss ionization edges. The Mn valence determined for the internal od the studied LSMO layers agrees with the nomial value of 3.3, while on some LSMO/STO interfaces between substrate and layers as well as between multilayers a reduction by 0.1..0.2 is to be observed. Furthermore the influence of the interface manifests in the occurence of a shoulder on the side of lower energy loss of the Mn L3 edge. The geometrical phase analysis of HRTEM pictures and TEM bright-field pictures prove a tetragonal strain of th LSMO layer crystals, which consist of needle-shaped twin domains. From highly resolved scanning TEM pictures by electrons scattered under large angle results that the LSMO/STO interface exhibit a coherent lattice structure accidentally provided with elementary-cell stages. Especially the stages (single- or multi-stages) mediate the wavy structure of the LSMO/STO interlayers. Finally it is shown that at low thicknes of the TEM lamella the expected crystal-plane inclination exceeds the expected crystal-plane inclination of the twins [de

  8. Built-in and Induced Polarization Across LaAlO3/SrTiO3 Heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Guneeta, Singh-Bhalla

    2011-08-15

    Ionic crystals terminated at oppositely charged polar surfaces are inherently unstable and expected to undergo surface reconstructions to maintain electrostatic stability. Essentially, an electric field that arises between oppositely charged atomic planes gives rise to a built-in potential that diverges with thickness. Here we present evidence of such a built-in potential across polar LaAlO{sub 3} thin films grown on SrTiO{sub 3} substrates, a system well known for the electron gas that forms at the interface. By performing tunneling measurements between the electron gas and metallic electrodes on LaAlO{sub 3} we measure a built-in electric field across LaAlO{sub 3} of 80.1 meV/{angstrom}. Additionally, capacitance measurements reveal the presence of an induced dipole moment across the heterostructure. We forsee use of the ionic built-in potential as an additional tuning parameter in both existing and novel device architectures, especially as atomic control of oxide interfaces gains widespread momentum.

  9. Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

    KAUST Repository

    Han, Wei

    2013-07-08

    There has been much interest in the injection and detection of spin-polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized carriers into Nb-doped strontium titanate single crystals and La-doped strontium titanate epitaxial thin films using MgO tunnel barriers and the three-terminal Hanle technique. Spin lifetimes of up to ∼100 ps are measured at room temperature and vary little as the temperature is decreased to low temperatures. However, the mobility of the strontium titanate has a strong temperature dependence. This behaviour and the carrier doping dependence of the spin lifetime suggest that the spin lifetime is limited by spin-dependent scattering at the MgO/strontium titanate interfaces, perhaps related to the formation of doping induced Ti 3+. Our results reveal a severe limitation of the three-terminal Hanle technique for measuring spin lifetimes within the interior of the subject material. © 2013 Macmillan Publishers Limited. All rights reserved.

  10. Absence of confinement in (SrTiO3)/( SrTi0.8Nb0.2O3 ) superlattices

    Science.gov (United States)

    Bouzerar, G.; Thébaud, S.; Bouzerar, R.; Pailhès, S.; Adessi, Ch.

    2018-03-01

    The reduction of dimensionality is considered an efficient pathway to boost the performances of thermoelectric materials. Quantum confinement of the carriers is expected to induce large Seebeck coefficients (S ) and it also suppresses the thermal conductivity by increasing the phonon scattering processes. However, quantum confinement in superlattices is not always easy to achieve and needs to be carefully validated. In the past decade, large values of S have been measured in (SrTiO3)/(SrTi0.8Nb0.2O3 ) superlattices [H. Ohta et al., Nat. Mater. 6, 129 (2007), 10.1038/nmat1821; Y. Mune et al., Appl. Phys. Lett. 91, 192105 (2007), 10.1063/1.2809364]. In the δ -doped compound, the reported S was almost six times larger than that of the bulk material. This huge increase has been attributed to the two-dimensional carrier confinement in the doped regions. Here, we demonstrate that the experimental data are well explained quantitatively assuming delocalized electrons in both in-plane and growth directions. Moreover, we rule out the confined electron hypothesis whose signature would be the suppression of the Seebeck coefficient. This strongly suggests that the presupposed confinement picture in these superlattices is unlikely.

  11. Effect of Dopant Loading on the Structural and Catalytic Properties of Mn-Doped SrTiO3 Catalysts for Catalytic Soot Combustion

    Directory of Open Access Journals (Sweden)

    Santiago Iván Suárez-Vázquez

    2018-02-01

    Full Text Available Soot particles have been associated with respiratory diseases and cancer. To decrease these emissions, perovskite-mixed oxides have been proposed due to their thermal stability and redox surface properties. In this work, SrTiO3 doped with different amounts of Mn were synthesized by the hydrothermal method and tested for soot combustion. Results show that at low Mn content, structural distortion, and higher Oads/Olat ratio were observed which was attributed to the high content of Mn3+ in Ti sites. On the other hand, increasing the Mn content led to surface segregation of manganese oxide. All synthesized catalysts showed mesopores in the range of 32–47 nm. In the catalytic combustion of soot, the samples synthesized in this work lowered the combustion temperature by more than 100 °C compared with the uncatalyzed reaction. The sample doped with 1 wt % of Mn showed the best catalytic activity. The activation energy of these samples was also calculated, and the order of decreasing activation energy is as follows: uncatalyzed > Mn0 > Mn8 > Mn4 > Mn1. The best catalytic activity for Mn1 was attributed to its physicochemical properties and the mobility of the oxygen from the bulk to the surface at temperatures higher than 500 °C.

  12. Structure/Property Relationships for Sol-gel Derived YBa2Cu3O7-d and SrTiO3 Films

    Science.gov (United States)

    Dawley, Jeff; Clem, Paul; Siegal, Michael; Overmyer, Don

    2001-03-01

    Solution deposition of c-axis oriented YBa2Cu3O7-d (YBCO) films on buffered RABiT substrates is a potential method for rapid, low cost production of superconducting tapes for power transmission and other applications. For this work, 100-250 nm thick YBCO and SrTiO3 (STO) films have been prepared by spin-coating and dip-coating sol-gel solutions onto LaAlO3 (100) and RABiT Ni (200) substrates. Biaxially textured STO coatings have been deposited on LaAlO3 and RABiT Ni by using a "templating" technique and controlling growth temperature and pO2. YBCO films grown on STO coated LaAlO3 possess comparable superconducting properties to YBCO films grown directly on LaAlO3 ( 1 MA/cm2 at 77K), indicating that a high quality STO layer does not degrade the crystalline quality of the YBCO. The effects of processing parameters on the STO buffer layer and novel processing techniques for decreasing the processing time and simplifying the integration of sol-gel YBCO with Ni substrates will be discussed. Sandia is a multiprogram laboratory operated by Sandia Corp., a Lockheed Martin Company, for the US Dept. Of Energy under contract DE-AC04-94A185000.

  13. Epitaxial growth of SrTiO3 (001) films on multilayer buffered GaN (0002) by pulsed laser deposition

    International Nuclear Information System (INIS)

    Luo, W B; Jing, J; Shuai, Y; Zhu, J; Zhang, W L; Zhou, S; Gemming, S; Du, N; Schmidt, H

    2013-01-01

    SrTiO 3 films were grown on CeO 2 /YSZ/TiO 2 multilayer buffered GaN/Al 2 O 3 (0001) substrates with and without the YBa 2 Cu 3 O 7-x (YBCO) bridge layer by pulsed laser deposition (PLD). The deposition process of the buffer layers was in situ monitored by reflection high-energy electron diffraction. The crystallographical orientation of the heterostructure was studied by x-ray diffraction (XRD). With the introduction of the YBCO (001) layer, the STO (001) film was epitaxially grown on the GaN substrate. There were three sets of inplane domains separated from each other by 30° in both STO and YBCO buffer layers. The epitaxial relationship was STO (002)[110]∥YBCO(001)[110]∥CeO 2 (002)[010]∥YSZ (002)[010]∥GaN(0001)[1 1 -2 0] according to XRD results. By comparing the orientation of STO grown on GaN with and without the YBCO top buffer layer, the surface chemical bonding was found to be a very important factor in determining the orientation relationship of STO.

  14. Self-powered sensitive and stable UV-visible photodetector based on GdNiO3/Nb-doped SrTiO3 heterojunctions

    Science.gov (United States)

    Wang, Le; Chang, Lei; Yin, Xinmao; You, Lu; Zhao, Jia-Li; Guo, Haizhong; Jin, Kuijuan; Ibrahim, Kurash; Wang, Jiaou; Rusydi, Andrivo; Wang, Junling

    2017-01-01

    The properties of perovskite nickelates are very sensitive to their oxygen content, which allows us to tune their electronic structures by varying the oxygen partial pressure during film deposition. Under the optimized condition, we have obtained GdNiO3 films that are sensitive to a wide spectrum of light. By combining the GdNiO3 film with Nb-doped SrTiO3 to form a heterojunction, we design a self-powered photodetector with high sensitivity toward light with a wavelength between 650 nm and 365 nm. Under 365 nm illumination (50 μW/cm2), the device shows a responsivity of 0.23 A/W at 0 V bias, comparable to or even better than the ultraviolet photodetectors made of semiconductor materials such as GaN or ZnO. The photo-dark ratio can be close to 103 when the power light density reaches 0.6 mW/cm2. Moreover, the device performance is very stable without any decay after 6 months.

  15. Strong energy-momentum dispersion of phonon-dressed carriers in the lightly doped band insulator SrTiO3

    International Nuclear Information System (INIS)

    Meevasana, W; Chen, C-C; He, R H; Mo, S-K; Shen, Z-X; Zhou, X J; Moritz, B; Lu, D H; Moore, R G; Devereaux, T P; Fujimori, S-I; Baumberger, F; Van der Marel, D; Nagaosa, N; Zaanen, J

    2010-01-01

    Much progress has been made recently in the study of the effects of electron-phonon (el-ph) coupling in doped insulators using angle-resolved photoemission (ARPES), yielding evidence for the dominant role of el-ph interactions in underdoped cuprates. As these studies have been limited to doped Mott insulators, the important question arises as to how this compares with doped band insulators where similar el-ph couplings should be at work. The archetypical case is that of perovskite SrTiO 3 (STO), well known for its giant dielectric constant of 10 000 at low temperatures, exceeding that of La 2 CuO 4 by a factor of 500. Based on this fact, it has been suggested that doped STO should be the archetypical bipolaron superconductor. Here we report an ARPES study from high-quality surfaces of lightly doped STO. In comparison to lightly doped Mott insulators, we find the signatures of only moderate el-ph coupling; a dispersion anomaly associated with the low-frequency optical phonon with a λ ' ∼0.3 and an overall bandwidth renormalization suggesting an overall λ ' ∼0.7 coming from the higher frequency phonons. Furthermore, we find no clear signatures of the large pseudogap or small-polaron phenomena. These findings demonstrate that a large dielectric constant itself is not a good indicator of el-ph coupling and highlight the unusually strong effects of the el-ph coupling in doped Mott insulators.

  16. Tunable magnetism in the LaAlO3/SrTiO3 heterostructure: Insights from first-principles calculations

    Science.gov (United States)

    Xue, Yuanbin; Zhao, Jinzhu; Shan, Yueyue; Xu, Hu

    2018-04-01

    By performing first-principles calculations, we explored the origin and controlling methods of magnetism in ideal and oxygen deficient (001) LaAlO3/SrTiO3 (LAO/STO) heterostructures. It was found that the ferromagnetic ordering is the ground state and that the interfacial Ti 3d electrons introduced by the LaO-termination, polar catastrophe and oxygen vacancies can all contribute to the magnetism. With respect to the ways of tuning the magnetic properties, our results show that LaO-terminated films generally carry much stronger magnetic moments than their AlO2-terminated counterparts and that the magnitude of magnetic moments can also be effectively controlled by the LAO film thickness. In addition, oxygen vacancy leads to substantial electronic reconstruction of the interfacial Ti 3d orbitals, which enhances the magnetization and makes the magnetism emerge in thinner polar LAO films. This work offers useful information to facilitate one's understanding of the magnetism and to provide clues to engineer the magnetic behaviors in related oxide heterostructures.

  17. Evolution of the SrTiO3 surface electronic state as a function of LaAlO3 overlayer thickness

    Science.gov (United States)

    Plumb, N. C.; Kobayashi, M.; Salluzzo, M.; Razzoli, E.; Matt, C. E.; Strocov, V. N.; Zhou, K. J.; Shi, M.; Mesot, J.; Schmitt, T.; Patthey, L.; Radović, M.

    2017-08-01

    The novel electronic properties emerging at interfaces between transition metal oxides, and in particular the discovery of conductivity in heterostructures composed of LaAlO3 (LAO) and SrTiO3 (STO) band insulators, have generated new challenges and opportunities in condensed matter physics. Although the interface conductivity is stabilized when LAO matches or exceeds a critical thickness of 4 unit cells (uc), other phenomena such as a universal metallic state found on the bare surface of STO single crystals and persistent photon-triggered conductivity in otherwise insulating STO-based interfaces raise important questions about the role of the LAO overlayer and the possible relations between vacuum/STO and LAO/STO interfaces. Here, using angle-resolved photoemission spectroscopy (ARPES) on in situ prepared samples complemented by resonant inelastic X-ray scattering (RIXS), we study how the metallic STO surface state evolves during the growth of a crystalline LAO overlayer. In all the studied samples, the character of the conduction bands, their carrier densities, the Ti3+ crystal field, and the response to photon irradiation bear strong similarities. Nevertheless, we report here that studied LAO/STO interfaces exhibit an instability toward an apparent 2 × 1 folding of the Fermi surface at and above a 4 uc thickness threshold, which distinguishes these heterostructures from bare STO and sub-critical-thickness LAO/STO.

  18. Spin-orbit interaction and Kondo scattering at the PrAlO3/SrTiO3 interface: effects of oxygen content

    Science.gov (United States)

    Mozaffari, Shirin; Guchhait, Samaresh; Markert, John T.

    2017-10-01

    We report the effects of oxygen pressure during growth (PO2 ) on the electronic and magnetic properties of PrAlO3 films grown on TiO2 -terminated SrTiO3 substrates. Resistivity measurements show an increase in the sheet resistance as PO2 is increased. The saturation of the sheet resistance down to 0.3 K is consistent with Kondo theory for PO2 ≥slant 10-5 torr. Resistivity data fits indicate Kondo temperatures of 16-18 K. For the 10-4 sample, we measured a moderate positive magnetoresistance (MR) due to a strong spin-orbit (SO) interaction at low magnetic fields that evolves into a larger negative MR at high fields due to the Kondo effect. Analysis of the MR data permitted the extraction of the SO interaction critical field for the PO2=10-5 torr interface ( H_SO=1.25 T). We observed high positive MR for the least oxygenated sample, where a fraction of the n-type carriers are derived from oxygen vacancies and possible cation interdiffusion; for this 6×10-6 torr sample, Hall effect data indicate a thick conducting layer. Its extremely high MR (˜400% ) is attributed to classical behavior due to a distribution of mobilities.

  19. Parallel charge sheets of electron liquid and gas in La0.5Sr0.5TiO3/SrTiO3 heterostructures

    Science.gov (United States)

    Renshaw Wang, X.; Sun, L.; Huang, Z.; Lü, W. M.; Motapothula, M.; Annadi, A.; Liu, Z. Q.; Zeng, S. W.; Venkatesan, T.; Ariando

    2015-12-01

    We show here a new phenomenon in La0.5Sr0.5TiO3/SrTiO3 (LSTO/STO) heterostructures; that is a coexistence of three-dimensional electron liquid (3DEL) and 2D electron gas (2DEG), separated by an intervening insulating LSTO layer. The two types of carriers were revealed through multi-channel analysis of the evolution of nonlinear Hall effect as a function of film thickness, temperature and back gate voltage. We demonstrate that the 3D electron originates from La doping in LSTO film and the 2D electron at the surface of STO is due to the polar field in the intervening insulating layer. As the film thickness is reduced below a critical thickness of 6 unit cells (uc), an abrupt metal-to-insulator transition (MIT) occurs without an intermediate semiconducting state. The properties of the LSTO layer grown on different substrates suggest that the insulating phase of the intervening layer is a result of interface strain induced by the lattice mismatch between the film and substrate. Further, by fitting the magnetoresistance (MR) curves, the 6 unit cell thick LSTO is shown to exhibit spin-orbital coupling. These observations point to new functionalities, in addition to magnetism and superconductivity in STO-based systems, which could be exploited in a multifunctional context.

  20. Magnetism, Spin Texture, and In-Gap States: Atomic Specialization at the Surface of Oxygen-Deficient SrTiO_{3}.

    Science.gov (United States)

    Altmeyer, Michaela; Jeschke, Harald O; Hijano-Cubelos, Oliver; Martins, Cyril; Lechermann, Frank; Koepernik, Klaus; Santander-Syro, Andrés F; Rozenberg, Marcelo J; Valentí, Roser; Gabay, Marc

    2016-04-15

    Motivated by recent spin- and angular-resolved photoemission (SARPES) measurements of the two-dimensional electronic states confined near the (001) surface of oxygen-deficient SrTiO_{3}, we explore their spin structure by means of ab initio density functional theory (DFT) calculations of slabs. Relativistic nonmagnetic DFT calculations display Rashba-like spin winding with a splitting of a few meV and when surface magnetism on the Ti ions is included, bands become spin-split with an energy difference ∼100  meV at the Γ point, consistent with SARPES findings. While magnetism tends to suppress the effects of the relativistic Rashba interaction, signatures of it are still clearly visible in terms of complex spin textures. Furthermore, we observe an atomic specialization phenomenon, namely, two types of electronic contributions: one is from Ti atoms neighboring the oxygen vacancies that acquire rather large magnetic moments and mostly create in-gap states; another comes from the partly polarized t_{2g} itinerant electrons of Ti atoms lying further away from the oxygen vacancy, which form the two-dimensional electron system and are responsible for the Rashba spin winding and the spin splitting at the Fermi surface.

  1. Rectifying characteristics and magnetoresistance in La0.9Sr0.1MnO3/Nb-doped SrTiO3 heterojunctions

    International Nuclear Information System (INIS)

    Luo, Z.; Gao, J.

    2007-01-01

    Manganite-based heterojunctions have attracted lots of attention as one of the most promising practical applications of colossal magnetoresistance materials. In this work, heterojunctions were fabricated by depositing La 0.9 Sr 0.1 MnO 3 (LSMO) films on substrates of 0.7 wt.% Nb-doped SrTiO 3 using pulsed laser deposition technique. X-ray diffraction spectra confirmed that the grown films are of single phase and have an orientation with the c-axis perpendicular to the substrate surface. As temperature decreases, the resistivity of LSMO films first increases gradually and then increases abruptly at temperature lower than 150 K. These junctions showed clear rectifying characteristics and strong temperature dependent current-voltage relation. Diffusion voltage decreases as temperature increases. Under forward bias, current is proportion to exp(eV/nkT). Ideal factor increases quickly and tunneling current plays more and more important role as temperature decreases. At 50 K, tunneling current becomes nearly dominant. Large magnetoresistance was observed. The sign and value of such magnetoresistance depends on the direction and value of current

  2. Epitaxial growth of Co(0 0 0 1)hcp/Fe(1 1 0)bcc magnetic bi-layer films on SrTiO3(1 1 1) substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Shikada, Kouhei; Kirino, Fumiyoshi; Futamoto, Masaaki

    2008-01-01

    Co(0 0 0 1) hcp /Fe(1 1 0) bcc epitaxial magnetic bi-layer films were successfully prepared on SrTiO 3 (1 1 1) substrates. The crystallographic properties of Co/Fe epitaxial magnetic bi-layer films were investigated. Fe(1 1 0) bcc soft magnetic layer grew epitaxially on SrTiO 3 (1 1 1) substrate with two type variants, Nishiyama-Wasserman and Kurdjumov-Sachs relationships. An hcp-Co single-crystal layer is obtained on Ru(0 0 0 1) hcp interlayer, while hcp-Co layer formed on Au(1 1 1) fcc or Ag(1 1 1) fcc interlayer is strained and may involve fcc-Co phase. It has been shown possible to prepare Co/Fe epitaxial magnetic bi-layer films which can be usable for patterned media application

  3. 2D Electron Gas with 100% Spin-Polarization in the (LaMnO3)2/(SrTiO3)2 Superlattice under Uniaxial Strain

    KAUST Repository

    Cossu, Fabrizio

    2014-07-28

    By first-principles calculations we investigate the structural, electronic, and magnetic properties of the (LaMnO3)2/(SrTiO3)2 superlattice. We find that a monoclinic C2h symmetry is energetically favorable and that the spins order ferromagnetically. Under both compressive and tensile uniaxial strain the electronic structure of the superlattice shows a half-metallic character. In particular, a fully spin-polarized two-dimensional electron gas, which traces back to the Ti 3dxy orbitals, is achieved under compressive uniaxial strain. The (LaMnO3)2/(SrTiO3)2 superlattice is analysed with respect to its structure, magnetism, and electronic properties. Our results demonstrate that uniaxial strain in an experimentally accessible range, both tensile and compressive, can be used to induce half-metallicity. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Photo(electro)chemical oxidation of water by the persulfate ion over aqueous suspensions of strontium titanate SrTiO3 containing lanthanum chromite LaCrO3

    NARCIS (Netherlands)

    Thewissen, D.H.M.W.; Timmer, K.; Eeuwhorst‐Reinten, M.; Tinnemans, A.H.A.; Mackor, A.

    1982-01-01

    The photodecomposition of the S2O2‐ 8 ion to the SO2‐ 4 ion with concomitant oxidation of water to molecular oxygen over n‐type SrTiO3 powders mixed with LaCrO3 (mole fraction x = 0–1), using UV light (λ > 300 nm), is considerably faster than the photochemical (UV) decomposition of S2O2‐ 8 in water

  5. AES (auger electron spectroscopy) and EELS (electron energy loss spectroscopy) analysis of TlBaCaCuO/sub x/ thin films at 300 K and at 100 K

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, A.J.; Swartzlander, A.; Kazmerski, L.L.; Kang, J.H.; Kampwirth, R.T.; Gray, K.E.

    1988-10-01

    Auger electron spectroscopy line-shape analysis of the Tl(NOO), Ba(MNN), Ca(LMM), Cu(LMM) and O(KLL) peaks has been performed in conjunction with electron energy loss spectroscopy (EELS) on magnetron sputter deposited TlBaCaCuO/sub x/ thin films exhibiting a superconducting onset at 110K with zero resistance at 96K. AES and EELS analyses were performed at 300K and at 100K. Changes in the Auger line shapes and in the EELS spectra as the temperature is lowered below the critical point are related to changes in the electronic structure of states in the valence band (VB). Bulk and surface plasmon peaks are identified in the EELS spectra along with features due to core level transitions. Electron beam and ion beam induced effects are also addressed. 13 refs., 3 figs., 1 tab.

  6. The role of structural order-disorder for visible intense photoluminescence in the BaZr{sub 0.5}Ti{sub 0.5}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Anicete-Santos, M. [Laboratorio Interdisciplinar de Eletroquimica e Ceramica, Departamento de Quimica, Universidade Federal de Sao Carlos, P.O. Box 676, 13565-905, Sao Carlos, SP (Brazil)], E-mail: marcos@liec.ufscar.br; Cavalcante, L.S. [Centro de Ciencias da Natureza, Departamento de Quimica, Universidade Federal do Piaui, 64049-550, Teresina, PI (Brazil); Orhan, E. [Laboratorio Interdisciplinar de Eletroquimica e Ceramica, Departamento de Fisico-Quimica, Instituto de Quimica, Universidade Estadual Paulista, P.O. Box 355, 14801-907, Araraquara, SP (Brazil); Paris, E.C. [Laboratorio Interdisciplinar de Eletroquimica e Ceramica, Departamento de Quimica, Universidade Federal de Sao Carlos, P.O. Box 676, 13565-905, Sao Carlos, SP (Brazil); Simoes, L.G.P. [Laboratorio Interdisciplinar de Eletroquimica e Ceramica, Departamento de Fisico-Quimica, Instituto de Quimica, Universidade Estadual Paulista, P.O. Box 355, 14801-907, Araraquara, SP (Brazil); Joya, M.R. [Departamento de Fisica, Universidade Federal de Sao Carlos, P.O. Box 676, 13565-905, Sao Carlos, SP (Brazil); Rosa, I.L.V. [Laboratorio Interdisciplinar de Eletroquimica e Ceramica, Departamento de Quimica, Universidade Federal de Sao Carlos, P.O. Box 676, 13565-905, Sao Carlos, SP (Brazil); Lucena, P.R. de; Leite, E.R.; Longo, E. [Laboratorio Interdisciplinar de Eletroquimica e Ceramica, Departamento de Quimica, Universidade Federal de Sao Carlos, P.O. Box 676, 13565-905, Sao Carlos, SP (Brazil); Santos, M.R.M.C.; Santos-Junior, L.S. [Centro de Ciencias da Natureza, Departamento de Quimica, Universidade Federal do Piaui, 64049-550, Teresina, PI (Brazil); Pizani, P.S. [Departamento de Fisica, Universidade Federal de Sao Carlos, P.O. Box 676, 13565-905, Sao Carlos, SP (Brazil); Varela, J.A. [Laboratorio Interdisciplinar de Eletroquimica e Ceramica, Departamento de Fisico-Quimica, Instituto de Quimica, Universidade Estadual Paulista, P.O. Box 355, 14801-907, Araraquara, SP (Brazil)

    2005-09-19

    The nature of the intense visible room temperature photoluminescence of BaZr{sub 0.5}Ti{sub 0.5}O{sub 3} non-crystalline thin films is discussed in the light of experimental results and theoretical calculations. The photoluminescence measurements reveal that the emission intensity changes with the degree of disorder in the BaZr{sub 0.5}Ti{sub 0.5}O{sub 3} lattice. First principles quantum mechanical techniques, based on density functional theory at B3LYP level, have been employed to study the electronic structure of a crystalline model and of structurally disordered models in order to detect the influence of disorder on the electronic structure. An analysis of the electronic charge distribution reveals local polarization in the disordered structures. The relevance of the present theoretical and experimental results on the photoluminescence behavior of BZT is discussed.

  7. High-energy helium backscattering for the compositional analysis of thin-film oxide-superconductors

    International Nuclear Information System (INIS)

    Hubbard, K.M.; Martin, J.A.; Muenchausen, R.E.; Tesmer, J.R.; Nastasi, M.

    1989-01-01

    Recent experiments have demonstrated that the broad elastic-scattering resonance for 8.8 MeV helium bombardment of oxygen can be exploited to measure the oxygen content of YBaCuO thin films. A potential difficulty with such measurements is distortion of the backscattering spectrum due to resonant scattering from the substrate elements, which could prevent the accurate integration of peak areas. We have measured the elastic scattering cross sections for Sr and Ti, relative to Gd, with He ions in the energy range of 2.2--8.8 MeV, and a scattering angle of 166 degree. The results verify that resonant scattering from the substrate does not interfere with the high-energy compositional analysis of YBaCuO films deposited on SrTiO 3 . Scattering cross sections for Ca, measured relative to Ba, have also been determined for application to the analysis of BiSrCaCuO and TlCaBaCuO films. Because of resonant scattering from Ca at beam energies above 6 MeV, two backscattering measurements are required for these materials: one at 8.8 MeV to determine the O content, and one at or below 6 MeV to determine the Ca content. Anticipating a more general applicability of this technique to the analysis of metal-oxide films, data are also presented for a number of elements, as an empirical guideline, which give the beam energies above which scattering cross sections deviate from their Rutherford values, and must be determined experimentally. 10 refs., 6 figs., 4 tabs

  8. Photoresponse properties of BaSi{sub 2} epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Suemasu, Takashi, E-mail: suemasu@bk.tsukuba.ac.jp; Saito, Takanobu; Toh, Katsuaki; Okada, Atsushi; Khan, Muhammad Ajmal

    2011-10-03

    We have successfully grown 360-nm-thick undoped n-BaSi{sub 2} epitaxial layers on the n{sup +}-BaSi{sub 2}/p{sup +}-Si(111) tunnel junction, by molecular beam epitaxy. The external quantum efficiency reached approximately 17.8% at 500 nm under a reverse bias voltage of 4 V at room temperature, the highest value ever reported for semiconducting silicides. The quantum efficiency was compared to 240-nm-thick undoped n-BaSi{sub 2} epitaxial layers on a p-Si(111) substrate.

  9. Magnetocapacitance of BaZr0.2Ti0.8O3 and La0.67Sr0.33MnO3 thin film heterostructures

    International Nuclear Information System (INIS)

    Tarale, A.N.; Padal, N.T.; Salunkhe, D.J.; Joshi, P.B.; Kulkarni, S.B.; Reddy, V.R.

    2012-01-01

    The present paper reports MD properties of BaZr 0.2 Ti 0.8 O 3 and La 0.67 Sr 0.33 MnO 3 (LSMO) thin film multilayer composite. The BZT is known to be relaxer possessing Curie temperature in vicinity of room temperature while LSMO is a CMR material possessing T c at room temperature. The Magnetoresistance of LSMO is known to cause change in intragrain interfacial polarization as function of applied magnetic field and dielectric constant ε H changes with applied magnetic field. From the literature survey it is observed that the MD properties based on CMR phenomena are not well investigated and efforts towards further exploration of these phenomena are required. Recent reports also indicate that that the magneto capacitance posses the contribution due giant magnetostriction of LMSO. The BZT as well as LSMO gels are synthesized using modified Pechini method. Initially hydroxide precipitates of Ba, Zr, Ti and La, Sr, Mn are dissolved in citric acid to form citrates of cations individually. The citrate solution is polymerized by addition of ethylene glycol and used as a coating solution. The alternate layers of thin films of BZT and LSMO are deposited on SiO 2 /nSi(100) substrate. The nanoparticles heterostructure are formed by sintering the thin films at 800 deg C. The thin films are investigated for crystal structure, morphology, dielectric constant, and complex impedance as a function of frequency f up to 1 MHz and magnetic field up to 5 kOe respectively. It is observed that the thin film composites exhibits magnetocapacitance of 8.3% for 1 KHz and possess a finite value even at 1MHz. The observed variation of impedance spectra in terms of Maxwell-Wagner model and in the light of the recent observation by Xiaodong Tang, et al. 2011. (author)

  10. Effect of substrate temperature in the structural, optical and ferroelectric properties of thin films of BaTiO{sub 3} deposited by RF sputtering; Efecto de la temperatura de substrato en las propiedades estructurales, opticas y ferroelectricas de peliculas delgadas de BaTiO{sub 3} depositadas por RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marquez H, A. [Universidad Autonoma de San Luis Potosi, Coordinacion Academica Region Altiplano, Carretera a Cedral Km. 5 -600, Matehuala, 78800 San Luis Potosi (Mexico); Hernandez R, E.; Zapata T, M. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Legaria, Calz. Legaria 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Calzadilla A, O. [Universidad de la Habana, Facultad de Fisica-IMRE, San Lazaro y L. Municipio Plaza de la Revolucion, La Habana (Cuba); Melendez L, M. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14-740, 07000 Mexico D. F. (Mexico)

    2012-07-01

    Thin films of Barium Titanate (BaTiO{sub 3}) were grown on nichrome and quartz substrates, using a BaTiO{sub 3} target, by RF sputtering technique. We varied the substrate temperature in order to study its effect on the structural, optical and ferroelectric properties of the samples. The results of the X-ray diffraction showed tetragonal structure with increases of the crystallinity as increases the substrate temperature. Furthermore, it observed by ultraviolet-visible spectroscopy that the band gap decreased as the substrate temperature increases showing abrupt sharp decrease at 494.8{sup o} C. The ferroelectric properties of the films showed a dependence with substrate temperature, the best ferroelectric answer was obtained at 494.8{sup o} C. (Author)

  11. Magnetic property tuning of epitaxial spinel ferrite thin films by strain and composition modulation

    Science.gov (United States)

    Kang, Young-Min; Lee, Seung Han; Kim, Tae Cheol; Jeong, Jaeeun; Yang, Daejin; Han, Kyu-Sung; Kim, Dong Hun

    2017-10-01

    Epitaxial spinel ferrite CoFe2O4 and NiFe2O4 thin films and bilayers of NiFe2O4 and CoFe2O4 have been grown by pulsed laser deposition on (001)-oriented SrTiO3 and MgO substrates. Both the single layer thin films showed epitaxial growth on MgO substrates with out-of-plane magnetic easy axis, originating from the out-of-plane compressive strain and negative magnetostriction constant. However, films on SrTiO3 substrates exhibited a magnetic easy axis along the in-plane. Magnetic hysteresis loops showed intermediate shape between magnetically hard CoFe2O4 and magnetically soft NiFe2O4 without two-step switching. Interdiffusion between spinel phases was suppressed using a blocking layer of MgO.

  12. Proton conducting BaCe{sub 0.7}Zr{sub 0.1}Y{sub 0.2}O{sub 2.9} thin films by spray deposition for solid oxide fuel cell

    Energy Technology Data Exchange (ETDEWEB)

    Dubal, S.U.; Jamale, A.P.; Bhosale, C.H. [Department of Physics, Shivaji University, Kolhapur 416 004 (India); Jadhav, L.D., E-mail: ldjadhav.phy@gmail.com [Department of Physics, Rajaram College, Kolhapur 416 004 (India)

    2015-01-01

    Highlights: • BCY and BCZY thin films electrolytes are prepared by SPT. • The BCZY oxides exhibit better sinterability than BCY. • The elemental composition of films was affirmed with EDAX. • Raman spectra confirmed absence of any surface impurities. • BCZY film shows higher conductivities in Moist-air. - Abstract: The nanocrystalline BaCe{sub 0.7}Zr{sub 0.1}Y{sub 0.2}O{sub 2.9} (BCZY) thin films have been deposited on alumina substrate by simple and economic spray pyrolysis technique. The spray deposited films were annealed at different temperatures and were characterized by different physio-chemical techniques. The XRD studies revealed orthorhombic structured BCZY thin films with little shift in 2θ compared to BCY. The crystallite size and grain size were observed to enhance with annealing temperature. The grain growth was completed by 1000 °C and compact structure was obtained at 1100 °C. Evolution of the surface microstructure and roughness of the BCY and BCZY thin films is done using AFM. Raman spectra of BCZY and BCY exhibits pronounced characteristic band at 359 and 353.25 cm{sup −1} respectively. The proton conductivity of BCZY thin film in moist atmosphere was 0.83 × 10{sup −3} S cm{sup −1} at 400 °C.

  13. Crystallization and electrical characteristics of 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 thin films under different annealing temperature and atmosphere.

    Science.gov (United States)

    Diao, Chien-Chen; Yang, Cheng-Fu; Lin, Jing-Jenn

    2011-12-01

    0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 +1 wt% Bi2O3 (NBT-BT3) ceramic is used as target to deposit the NBT-BT3 thin films. The excess 1wt% Bi2O3 is used to compensate the vaporization of Bi2O3 during the sintering and annealing processes. NBT-BT3 thin films are successfully deposited using radio frequency (RF) magnetron sputter method and crystallized subsequently using a conventional furnace annealing (CFA) process. The annealed process is conducted in air and in oxygen atmosphere at temperatures ranging from 600-800 degrees C for 60 min. As compared with the as-deposited NBT-BT3 thin films, the CFA-treated process has improved the grain growth and crystallization. We will show that the annealing atmosphere is the more important parameter to influence the grain growth and crystallization of NBT-BT3 thin films than the annealing temperature. The influences of CFA-treated temperature and atmosphere on the electrical characteristics of NBT-BT3 thin films, including the polarization characteristics (Pr, Ps, and Ec values), the capacitance-voltage (C-V) curves, and the leakage current density-electric field (J-E) curves, are also investigated in this study.

  14. Structural and transport characterization of ultra thin Ba0.05Sr0.95TiO3 layers grown over Nb electrodes for the development of Josephson junctions

    OpenAIRE

    Sirena, Martin; Aviles Felix, Luis Steven; Carvacho Vera, G. A.; Navarro Fernández, Henry Luciano; Steren, Laura Beatriz; Bernard, R.; Briático, J.; Bergeal, N.; Lesueur, J.; Faini, G.

    2017-01-01

    A phenomenological approach was used to obtain critical information about the structure and electrical properties of ultra thin Ba0.05Sr0.95TiO3 (BSTO) layers over Nb electrodes. The method allows, in a simple way, to study and to optimize the growth of the barrier in order to improve the performance and application of Josephson junctions. A very good control of the layer thickness with a low roughness was achieved during the deposition process. The BSTO layers present an energy barrier of 0....

  15. Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere

    KAUST Repository

    Altynnikov, A. G.

    2014-01-27

    The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices. © 2014 Author(s).

  16. Space resolved optical emission spectroscopy during deposition of Ba.sub.x./sub.Sr.sub.1-x./sub.TiO.sub.3./sub. thin films by double hollow cathode plasma Jet system

    Czech Academy of Sciences Publication Activity Database

    Olejníček, Jiří; Hubička, Zdeněk; Čada, Martin; Virostko, Petr; Kment, Štěpán; Adámek, Petr; Jastrabík, Lubomír; Dejneka, Alexandr

    2009-01-01

    Roč. 609, - (2009), s. 105-109 ISSN 0255-5476. [International Conference on Thin Films and Porous Materials /1./. Algiers , 19.05.2008-22.05.2008] R&D Projects: GA ČR GA202/08/1009; GA AV ČR KJB100100707; GA AV ČR KAN301370701; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100522 Keywords : Ba x Sr 1-x TiO 3 * BSTO * ferroelectric films * hollow cathode * optical emission spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

  17. Strain-induced oxygen defect formation and interfacial magnetic phase separation in SrTiO3(001)/La1-xSrxCoO3

    Science.gov (United States)

    Leighton, Chris

    2012-02-01

    The remarkable functionality and epitaxial compatibility of complex oxides provides many opportunities for new physics and applications in oxide heterostructures. Perovskite manganites and cobaltites provide excellent examples, being of interest for solid oxide fuel cells, catalysis, ferroelectric RAM, gas sensing, resistive switching memory, and oxide spintronics. However, the same delicate balance between phases that provides this diverse functionality also leads to a serious problem - the difficulty of maintaining desired properties close to the interface with other oxides. Although this problem is widespread, manifests itself in several ways, and could present a significant roadblock to the development of heterostructured devices for oxide electronics, there is no consensus as to its origin, or even whether it is driven by electronic or chemical effects. In this work, using SrTiO3(001)/La1-xSrxCoO3 as a model system, we have combined epitaxial growth via high pressure oxygen sputtering with high resolution x-ray diffraction, atomic resolution electron microscopy and spectroscopy, and detailed magnetic, transport, and neutron scattering measurements to determine the fundamental origin of the deterioration in interfacial transport and magnetism. The effect is found to be due to nanoscopic magnetic phase separation in the near-interface region driven by a significant depletion in interfacial hole doping due to accumulation of O vacancies. This occurs due to a novel mechanism for accommodation of lattice mismatch with the substrate based on formation and long-range ordering of O vacancies, thus providing a fundamental link between strain state and O vacancy density. Further impacts of the O vacancy ordering and interfacial magnetic phase separation, such as formation of a spin-state superlattice and an extraordinary coercivity enhancement, will also be discussed. Work in collaboration with M. Sharma, M. Torija, J. Schmitt, C. He, S. El-Khatib, J. Gazquez, M. Varela, M. Laver and J. Borchers.

  18. Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G.; Goble, Nicholas J.; Gao, Xuan P. A.; Posadas, Agham; Kormondy, Kristy J.; Demkov, Alexander A.; Lu, Sirong; Jordan-Sweet, Jean; Smith, David J.

    2015-01-01

    We report the formation of a quasi-two-dimensional electron gas (2-DEG) at the interface of γ-Al 2 O 3 /TiO 2 -terminated SrTiO 3 (STO) grown by atomic layer deposition (ALD). The ALD growth of Al 2 O 3 on STO(001) single crystal substrates was performed at temperatures in the range of 200–345 °C. Trimethylaluminum and water were used as co-reactants. In situ reflection high energy electron diffraction, ex situ x-ray diffraction, and ex situ cross-sectional transmission electron microscopy were used to determine the crystallinity of the Al 2 O 3 films. As-deposited Al 2 O 3 films grown above 300 °C were crystalline with the γ-Al 2 O 3 phase. In situ x-ray photoelectron spectroscopy was used to characterize the Al 2 O 3 /STO interface, indicating that a Ti 3+ feature in the Ti 2p spectrum of STO was formed after 2–3 ALD cycles of Al 2 O 3 at 345 °C and even after the exposure to trimethylaluminum alone at 300 and 345 °C. The interface quasi-2-DEG is metallic and exhibits mobility values of ∼4 and 3000 cm 2 V −1 s −1 at room temperature and 15 K, respectively. The interfacial conductivity depended on the thickness of the Al 2 O 3 layer. The Ti 3+ signal originated from the near-interfacial region and vanished after annealing in an oxygen environment

  19. Gate control of the mobility, carrier density and superconductivity at the LaAlO3/SrTiO3 interface

    Science.gov (United States)

    Bell, Christopher

    2012-02-01

    The conductivity at the LaAlO3/SrTiO3 interface [1], and in particular its control with a back-gate electrode in the superconducting regime [2], offers a powerful route to explore the 2D superconductor-insulator transition. An essential requirement is to fully understand how the gate voltage changes the various characteristic properties of the system, such as the mobility, carrier density, critical temperature, critical fields and superfluid density. One important point, for example, is that with back-gating the Hall mobility variation is significantly larger than the change in sheet carrier density [3]. These results indicate that the relative disorder strength increases across the superconductor-insulator transition, and that disorder is the primary control parameter associated with back-gating. I will discuss how this 2D superconductor-insulator transition can be understood, in analogy to thickness variations in other more conventional systems, and from studies of symmetrically confined 2D superconductivity in STO [4,5]. The importance of the strong dielectric nonlinearity in STO at low temperatures will be stressed, leading to the result that the gating phase diagram is a nonlinear function of the starting free carrier density. Our collaborative efforts using real space imaging of the superfluid density by scanning SQUID microscopy, offering an extremely powerful complementary tool to transport studies, will also be discussed, as well as the relationship between the superconductivity and the ferromagnetism in this fascinating system [6]. [4pt] [1] A. Ohtomo and H. Y. Hwang, Nature 427, 423 (2004).[0pt] [2] A. D. Caviglia et al., Nature 456, 624 (2008).[0pt] [3] C. Bell et al., Phys. Rev. Lett. 103, 226802 (2009).[0pt] [4] Y. Kozuka et al., Nature 462, 487 (2009).[0pt] [5] M. Kim et al., arxiv/1106.5193 (2011). [0pt] [6] J. Bert et al., Nature Phys. 7, 767 (2011).

  20. Reproducible fabrication and characterization of YBa2Cu3O7 Josephson junctions and SQUIDs on SrTiO3 bi-crystal substrates

    International Nuclear Information System (INIS)

    Kromann, R.; Vase, P.; Shen, Y.Q.; Freltoft, T.

    1993-01-01

    The fabrication of Josephson junctions and SQUIDs using ceramic high T c superconductors continues to be a subject of great interest and activity. In the case of the YBCO family of superconductors, most of the research effort has been concentrated on the grain boundary junctions. This type of junction can be fabricated in a controlled way by a variety of approaches, such as the bi-crystal technique, the bi-epitaxial technique or the step-edge technique. From a fabrication point of view, the bi-crystal technique is by far the simplest of the three. The availability of (100) SrTiO 3 bi-crystals on a commercial basis has lead to the possibility of making Josephson junctions by a simple process involving only one deposition and one patterning step. Reproducibility of the junction parameters between junctions on the same chip is a key point for electronic applications of Josephson junctions requiring a large amount of Josephson junctions working at the same time, as for example in the voltage standard. Another key point is the uniformity of the barrier, i.e. the extent to which the junction behaves as an ideal SIS junction. In this work junction uniformity has been studied by Frauenhofer diffraction patterns. The Josephson junctions have also been used in the fabrication of dc SQUIDs. In this work we have tried to optimize the magnitude of the voltage modulation from the SQUID by varying the design parameters. The SQUIDs have been characterized in terms of I c , R n , voltage modulation and noise properties. (orig.)